GaMnAs on patterned GaAs(001) substrates: Growth and magnetotransport

Energy Technology Data Exchange (ETDEWEB)

Daeubler, Joachim; Glunk, Michael; Hummel, Thomas; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

2007-07-01

A new type of GaMnAs microstructures with laterally confined electronic and magnetic properties has been realized in a bottom-up procedure by growing GaMnAs films on [1 anti 10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) substrates. Previous studies on planar GaMnAs samples have revealed different incorporation of Mn and excess As in (001) and (113)A layers. Accordingly, temperature- and field-dependent magnetotransport measurements on the overgrown ridge structures clearly demonstrate the coexistence of electronic and magnetic properties specific for (001) and (113)A GaMnAs in one single sample. This introduces an additional degree of freedom in the development of new functional structures.

Physical properties of the tetragonal CuMnAs: A first-principles study

Czech Academy of Sciences Publication Activity Database

Máca, František; Kudrnovský, Josef; Drchal, Václav; Carva, K.; Baláž, P.; Turek, I.

2017-01-01

Roč. 96, č. 9 (2017), s. 1-8, č. článku 094406. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Grant - others:GA MŠk(CZ) LM2015042 Institutional support: RVO:68378271 Keywords : first-principles calculations * defects * CuMnAs * transport properties Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

Diffusion of $^{52}$Mn in GaAs

CERN Multimedia

2002-01-01

Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN

International Nuclear Information System (INIS)

Kang, Joongoo; Chang, K. J.

2007-01-01

We perform first-principles theoretical calculations to investigate the effect of the presence of Ga vacancy on the defect and magnetic properties of Mn-doped GaN. When a Ga vacancy (V Ga ) is introduced to the Mn ions occupying the Ga lattice sites, a charge transfer occurs from the Mn d band to the acceptor levels of V Ga , and strong Mn-N bonds are formed between the Mn ion and the N atoms in the neighborhood of V Ga . The charge transfer and chemical bonding effects significantly affect the defect and magnetic properties of Mn-doped GaN. In a Mn-V Ga complex, which consists of a Ga vacancy and one Mn ion, the dangling bond orbital of the N atom involved in the Mn-N bond is electrically deactivated, and the remaining dangling bond orbitals of V Ga lead to the shallowness of the defect level. When a Ga vacancy forms a complex with two Mn ions located at a distance of about 6 A, which corresponds to the percolation length in determining the Curie temperature in diluted Mn-doped GaN, the Mn d band is broadened and the density of states at the Fermi level is reduced due to two strong Mn-N bonds. Although the broadening and depopulation of the Mn d band weaken the ferromagnetic stability between the Mn ions, the ferromagnetism is still maintained because of the lack of antiferromagnetic superexchange interactions at the percolation length

Magnetic properties of Heusler alloy Mn2RuGe and Mn2RuGa ribbons

International Nuclear Information System (INIS)

Yang, Ling; Liu, Bohua; Meng, Fanbin; Liu, Heyan; Luo, Hongzhi; Liu, Enke; Wang, Wenhong; Wu, Guangheng

2015-01-01

Heusler alloys Mn 2 RuGe and Mn 2 RuGa have been prepared by melt-spinning method successfully. Theoretical and experimental studies reveal a ferrimagnetic ground state in the two alloys. The Curie temperatures are 303 K for Mn 2 RuGe and 272 K for Mn 2 RuGa. The calculated total spin moments of Mn 2 RuGe and Mn 2 RuGa are integral values of 2.00 μ B and 1.03 μ B , respectively. And the theoretical spin polarization ratio is also quite high. However, due to the atomic disorder in the ribbons, the saturation moments of them measured at 5 K are smaller than the calculated values, especially that of Mn 2 RuGa. This coincides with the disappearance of the superlattice reflection (111) and (200) peaks in the XRD pattern of Mn 2 RuGa. Annealing Mn 2 RuGa ribbon at 773 K can enhance the atomic ordering. Both saturation magnetic moment and Curie temperature increase obviously after the heat treatment. - Highlights: • Mn 2 RuGe and Mn 2 RuGa have been prepared by melt-spinning successfully. • Ferrimagnetic ground state has been confirmed in Mn 2 RuGe and Mn 2 RuGa. • High spin polarization has been predicted in Mn 2 RuGe. • Melt-spinning can be a possible way to adjust the atomic order of Heusler alloys

Electronic Topological Transitions in CuNiMnAl and CuNiMnSn under pressure from first principles study

Science.gov (United States)

Rambabu, P.; Kanchana, V.

2018-06-01

A detailed study on quaternary ordered full Heusler alloys CuNiMnAl and CuNiMnSn at ambient and under different compressions is presented using first principles electronic structure calculations. Both the compounds are found to possess ferromagnetic nature at ambient with magnetic moment of Mn being 3.14 μB and 3.35 μB respectively in CuNiMnAl and CuNiMnSn. The total magnetic moment for both the compounds is found to decrease under compression. Fermi surface (FS) topology change is observed in both compounds under pressure at V/V0 = 0.90, further leading to Electronic Topological Transitions (ETTs) and is evidenced by the anomalies visualized in density of states and elastic constants under compression.

Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape

International Nuclear Information System (INIS)

Nidda, H-A Krug von; Kurz, T; Loidl, A; Hartmann, Th; Klar, P J; Heimbrodt, W; Lampalzer, M; Volz, K; Stolz, W

2006-01-01

We report a systematic study of ferromagnetic resonance in granular GaAs:Mn/MnAs hybrids grown on GaAs(001) substrates by metal-organic vapour-phase epitaxy. The ferromagnetic resonance of the MnAs clusters can be resolved at all temperatures below T c . An additional broad absorption is observed below 60 K and is ascribed to localized charge carriers of the GaAs:Mn matrix. The anisotropy of the MnAs ferromagnetic resonance field originates from the magneto-crystalline field and demagnetization effects of the ferromagnetic MnAs clusters embedded in the GaAs:Mn matrix. Its temperature dependence basically scales with magnetization. Comparison of the observed angular dependence of the resonance field with model calculations yields the preferential orientation and shape of the clusters formed in hybrid layers of different thickness (150-1000 nm) grown otherwise at the same growth conditions. The hexagonal axes of the MnAs clusters are oriented along the four cubic GaAs space diagonals. Thin layers contain lens-shaped MnAs clusters close to the surface, whereas thick layers also contain spherical clusters in the bulk of the layer. The magnetic properties of the hexagonal MnAs clusters can be tuned by a controlled variation of the cluster shape

The Mn site in Mn-doped GaAs nanowires: an EXAFS study

International Nuclear Information System (INIS)

D’Acapito, F; Rovezzi, M; Boscherini, F; Jabeen, F; Bais, G; Piccin, M; Rubini, S; Martelli, F

2012-01-01

We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound. (paper)

Severe plastic deformation of melt-spun shape memory Ti2NiCu and Ni2MnGa alloys

International Nuclear Information System (INIS)

Pushin, Vladimir G.; Korolev, Alexander V.; Kourov, Nikolai I.; Kuntsevich, Tatiana E.; Valiev, Eduard Z.; Yurchenko, Lyudmila I.; Valiev, Ruslan Z.; Gunderov, Dmitrii V.; Zhu, Yuntian T.

2006-01-01

This paper describes the influence of severe plastic deformation (SPD) on the structure, phase transformations, and physical properties of melt-spun Ti 2 NiCu-based and Ni 2 MnGa-based shape memory intermetallic alloys. It was found that the SPD by high pressure torsion (HPT) at room temperature can be effectively used for the synthesis of bulk nanostructured states in these initially submicro-grained or amorphized alloys obtained by melt-spinning method in the form of a ribbon. The subsequent low-temperature annealing of HPT-processed alloys leads to formation of homogeneous ultrafine nano-grained structure. This is connected with a very high degree and high homogeneity of deformation at SPD in the whole volume of deformed samples. (author)

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

2007-04-23

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

International Nuclear Information System (INIS)

Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

2007-01-01

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

Energy Technology Data Exchange (ETDEWEB)

Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp [Center of Innovative Photovoltaic Systems (CIPS), Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Maekawa, Takuji [Research and Development Headquarters, ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan); Niki, Shigeru [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2015-05-21

The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

Magnetic anisotropies of (Ga,Mn)As films and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Hoffmann, Frank

2011-02-02

In this work the magnetic anisotropies of the diluted magnetic semiconductor (Ga,Mn)As were investigated experimentally. (Ga,Mn)As films show a superposition of various magnetic anisotropies which depend sensitively on various parameters such as temperature, carrier concentration or lattice strain. However, the anisotropies of lithographically prepared (Ga,Mn)As elements differ significantly from an unpatterned (Ga,Mn)As film. In stripe-shaped structures this behaviour is caused by anisotropic relaxation of the compressive lattice strain. In order to determine the magnetic anisotropies of individual (Ga,Mn)As nanostructures a combination of ferromagnetic resonance and time-resolved scanning Kerr microscopy was employed in this thesis. In addition, local changes of the magnetic anisotropy in circular and rectangular structures were visualized by making use of spatially resolved measurements. Finally, also the influence of the laterally inhomogeneous magnetic anisotropies on the static magnetic properties, such as coercive fields, was investigated employing spatially resolved static MOKE measurements on individual (Ga,Mn)As elements. (orig.)

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges.

Science.gov (United States)

Cheng, Ji; Jiang, Shengxiang; Zhang, Yan; Yang, Zhijian; Wang, Cunda; Yu, Tongjun; Zhang, Guoyi

2017-05-02

The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs.

Strain-dependent magnetic anisotropy in GaMnAs on InGaAs templates

Energy Technology Data Exchange (ETDEWEB)

Daeubler, Joachim; Glunk, Michael; Schwaiger, Stephan; Dreher, Lukas; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

2008-07-01

We have systematically studied the influence of strain on the magnetic anisotropy of GaMnAs by means of HRXRD reciprocal space mapping and angle-dependent magnetotransport. For this purpose, a series of GaMnAs layers with Mn contents of {proportional_to}5% was grown by low-temperature MBE on relaxed InGaAs/GaAs templates with different In concentrations, enabling us to vary the strain in the GaMnAs layers continuously from tensile to compressive, including the unstrained state. Considering both, as-grown and annealed samples, the anisotropy parameter describing the uniaxial out-of-plane magnetic anisotropy has been found to vary linearly with hole density and strain. As a consequence, the out-of-plane direction gradually undergoes a transition from a magnetic hard axis to a magnetic easy axis from compressive to tensile strain.

Moessbauer spectroscopy of Fe-Mn-Cu alloys

International Nuclear Information System (INIS)

Paduani, Clederson; Krause, Joao Carlos; Yoschida, M.I. Soares

2004-01-01

Full text: Although a continuous series of solid solutions exists between Cu and Mn, Fe and Cu are miscible only a few percent at higher temperatures. In moderately concentrated Cu-Mn alloys the Mn moments are bound to the long ranged antiferromagnetic order and the perpendicular components form an X-Y spin glass. Copper alloys are largely employed in various industrial applications. In this work we study the magnetic properties of iron-rich disordered Fe-Mn-Cu alloys with the bcc structure with the experimental techniques of X-ray diffraction (XRD), Moessbauer spectroscopy (MS) and thermogravimetry (TGA). We investigate the formation of a solid solution with the bcc structure as well as the effect of the composition on the structural and magnetic properties of these alloys. A Rietveld analysis of the XRD diffractograms indicate that all prepared samples are single phase and are well crystallized with a bcc structure. (author)

Defect Structure of High-Temperature-Grown GaMnSb/GaSb

International Nuclear Information System (INIS)

Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

2010-01-01

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

Science.gov (United States)

Guzmán, G.; Escudero, R.; Silva, R.; Herrera, M.

2018-04-01

We present a study of the influence of gallium vacancy (VGa) point defects on the ferromagnetic properties of GaN:Mn and GaN:Mn,O micro- and nanostructures. Results demonstrate that the generation of these point defects enhances the ferromagnetic signal of GaN:Mn microstructures, while incorporation of oxygen as an impurity inhibits this property. XPS measurements revealed that Mn impurities in ferromagnetic GaN:Mn samples mainly exhibit a valence state of 2+. Cathodoluminescence (CL) spectra from Mn-doped GaN samples displayed emissions centered at about 1.97 eV, attributed to transitions between the 4T1-6A1 states of the Mn2+ d orbitals, and emissions centered at 2.45 and 2.9 eV, associated with the presence of VGa. CL measurements also revealed a blue shift of the GaN band-edge emission generated by the expansion of the wurtzite lattice due to Mn incorporation, which was confirmed by XRD measurements. These latter measurements also revealed an amorphization of GaN:Mn due to the incorporation of oxygen as impurities. The GaN:Mn samples were synthesized by thermal evaporation of GaN and MnCO3 powders onto Ni0.8Cr0.2/Si(100) in a horizontal furnace operated at low vacuum. The residual air inside the system was used as a source of oxygen during the synthesis of Mn and O co-doped GaN nanostructures. Mn and O impurities were incorporated into the nanostructures at different concentrations by varying the growth temperature. Energy Dispersive Spectroscopy, XRD, and XPS measurements confirmed that the obtained samples predominantly consisted of GaN.

Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

OpenAIRE

Qian, Suxin; Geng, Yunlong; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

2016-01-01

This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hystere...

Detection of stacking faults breaking the [110]/[110] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

International Nuclear Information System (INIS)

Kopecky, M.; Kub, J.; Maca, F.; Masek, J.; Pacherova, O.; Rushforth, A. W.; Gallagher, B. L.; Campion, R. P.; Novak, V.; Jungwirth, T.

2011-01-01

We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (111) planes and absent in the (111) and (111) planes. They occupy 10 -2 %-10 -1 % of the ferromagnetic epilayer volume while no stacking faults are detected in the controlled, undoped GaAs epilayer. Full-potential density functional calculations provide additional evidence that the formation of the stacking faults is promoted by Mn attracted to these structural defects. The enhanced Mn density along the common [110] direction of the stacking fault planes produces a symmetry-breaking mechanism of a strength and sense that can account for the uniaxial [110]/[110] magnetocrystalline anisotropy of these ferromagnetic semiconductors.

Diffusivities and atomic mobilities in Cu-rich fcc Al-Cu-Mn alloys

Energy Technology Data Exchange (ETDEWEB)

Yin, Ming; Du, Yong; Cui, Senlin; Xu, Honghui; Liu, Shuhong [Central South Univ., Changsha (China). State Key Laboratory of Powder Metallurgy; Zhang, Lijun [Bochum Univ. (DE). Interdisciplinary Centre for Advanced Materials Simulation (ICAMS)

2012-07-15

Via solid-solid diffusion couples, electron probe microanalysis and the Whittle and Green method, interdiffusivities in fcc Al-Cu-Mn alloys at 1 123 K were measured. The reliability of the obtained diffusivities is validated by comparing the computed diffusivities with literature data plus constraints among the diffusivities. Through assessments of experimentally determined diffusion coefficients by means of a diffusion-controlled transformations simulation package, the atomic mobilities of Al, Cu, and Mn in fcc Al-Cu-Mn alloys are obtained. Comprehensive comparisons between the model-predicted and the experimental data indicate that the presently obtained atomic mobilities can reproduce most of the diffusivities, concentration profiles, and diffusion paths reasonably. (orig.)

Strčess-induced martensitic transformation in Cu-Al-Zn-Mn polycrystal investigated by two in -situ neutron diffraction techniques

Czech Academy of Sciences Publication Activity Database

Šittner, Petr; Lukáš, Petr; Neov, Dimitar; Daymond, M. R.; Novák, Václav; Swallowe, G. M.

2002-01-01

Roč. 324, - (2002), s. 225-234 ISSN 0921-5093 R&D Projects: GA MŠk ME 186; GA ČR GV202/97/K038; GA AV ČR IAA1010909 Institutional research plan: CEZ:AV0Z1010914 Keywords : Stress-induced martensitic transformation * Cu-Al-Zn-Mn polycrystal * neutron diffraction technique Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.107, year: 2002

Magneto transport- and anisotropy studies on (001)- and (311)A-(Ga,Mn)As; Magnetotransport- und Anisotropieuntersuchungen an (001)- und (311)A-(Ga,Mn)As

Energy Technology Data Exchange (ETDEWEB)

Doeppe, M.

2007-10-19

In recent years the in low temperatures ferromagnetic semiconductor (Ga,Mn)As has gotten more and more into the focus of scientific interests. In the present work especially the magnetic anisotropies are concentrated upon. The first trials of epitactical growth of thin (Ga,Mn)As layers were successful on (001) GaAs substrate (typical thickness 20. 200 nm). In 2003 the Giant Planar Hall effect (GPHE) was discovered by resistance measurements in Hall geometry (transverse resistance) with an applied in plane magnetic field. The spin orbit coupling is accountable for both GPHE and the long known anisotropic magneto resistance (AMR). The gradient of the Hall voltage is important for the description of the resetting of magnetization because the resistance depends on the angle between the magnetization and the current path. This work presents results of anisotropy study on samples with a structure size in micro- and nanometer dimensions. The only a few hundred nanometer wide (Ga,Mn)As stripes were made by means of electron beam lithography and show strong additional uniaxiale magnetic anisotropy. The aspect ratio of the structure also influenced the resetting of magnetization. With the aid of compounding individual (Ga,Mn)As stripes (in a so-called zigzag structure) the evidence of a positive domain wall resistance in this material system could be shown. The second part of this work presents studies of (Ga,Mn)As layers grown on (311)A GaAs substrate. Here the B-field dependent Hall resistance measurements showed anomalous magnetic anisotropy in variance to (001)-(Ga,Mn)As. The orientation of the magnetic easy axes of (311)A (Ga,Mn)As depends - in contrast to (001)-(Ga,Mn)As - on the thickness of the magnetic layer and is tilted outside the (311)A surface. By an in plane applied magnetic field the AHE was also observable by the resetting of magnetization based on a non evanescent z-component perpendicular to the surface of this. An exact determination of the switching

TMR- and TAMR-effects of (Ga,Mn)As and GaAs tunnel junctions; TMR- und TAMR-Effekt an (Ga,Mn)As und GaAs Tunnelstrukturen

Energy Technology Data Exchange (ETDEWEB)

Brinkmeier, Eva

2009-07-30

This thesis is concerned with the experimental investigation of the tunnel magnetoresistance (TMR) and tunnel anistropic magnetoresistance (TAMR) in GaAs and (Ga,Mn)As tunnel junction. A special emphasis was put on the study of the newly discovered TAMR effect, which consists in the variation of the TMR with the magnetization's angle. The tunnel junctions were fabricated by means of optical lithography and wet chemical etching. The dependence of the TAMR effect on the layer system, the barrier thickness, the bias voltage, the temperature and the applied magnetic field magnitude was subsequently examined. The conducted measurements on (Ga,Mn)As junctions showed a TMR effect as well as various anisotropic effects which are in good agreement with the experimental reports published so far. The observed dependences of the TAMR effect on the aforementioned parameters were discussed within the framework of two distinct preexisting theoretical models and the experimental data could be explained by the superimposition of two effects stemming in one case from the spin orbit coupling in the (Ga,Mn)As layer and in the other from the concurrent action of the Rashba and Dresselhaus spin orbit interaction within the barrier. (orig.)

Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

International Nuclear Information System (INIS)

Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A; Molina-Valdovinos, S; Melendez-Lira, M; Lopez-Lopez, M

2009-01-01

In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm -1 and 291 cm -1 , respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm -1 and 250 cm -1 are evidenced. Additional new peaks located around 650 and 690 cm -1 are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm -1 and 695.2 cm -1 , in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn) m As n localized structures.

Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

International Nuclear Information System (INIS)

Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, M.; Mikulics, M.; Sofer, Z.

2015-01-01

We present a novel route for the synthesis of manganese doped GaN nanoparticles. Nanoparticles in the form of hexagonal discs were synthesized by rapid thermal treatment of manganese doped ammonium hexafluorogallate in ammonium atmosphere. The morphology of GaN:Mn nanoparticles was investigated using scanning electron microscopy. A concentration over 0.7 wt.% of Mn was observed by X-ray fluorescence and electron microprobe. Structural and electronic properties were investigated using X-ray diffraction, Raman spectroscopy and micro-photoluminescence with excitation wavelength of 325 nm and 532 nm. The magnetic properties between 4.5 K and 300 K were investigated by a superconducting quantum interference device (SQUID) magnetometer. GaN:Mn nanoparticles show a purely paramagnetic behavior which can be interpreted in terms of Mn 2+ ions exhibiting an antiferromagnetic interaction. - Highlights: • A new method for the synthesis of Mn doped GaN nanoparticles. • GaN:Mn nanoparticles form hexagonal discs. • None ferromagnetic ordering observed in GaN:Mn nanoparticles. • The concentration of Mn in GaN:Mn nanoparticles reach up to 0.8 wt.%

Growth of GaMnAs under near-stoichiometric conditions

International Nuclear Information System (INIS)

Avrutin, V.; Humienik, D.; Frank, S.; Koeder, A.; Schoch, W.; Limmer, W.; Sauer, R.; Waag, A.

2005-01-01

We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga 0.96 Mn 0.04 As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. A Curie temperature as high as 95 K was achieved for the Ga 0.96 Mn 0.04 As samples grown at 240 deg. C and a V/III ratio of about 1.5. The lattice parameter of Ga 0.96 Mn 0.04 As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of the V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed

Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

Energy Technology Data Exchange (ETDEWEB)

Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

2009-05-01

In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

The Paramagnetism of Small Amounts of Mn Dissolved in Cu-Al and Cu-Ge Alloys

Energy Technology Data Exchange (ETDEWEB)

Myers, H P; Westin, R

1963-06-15

Previous measurements of the valency of Mn in Cu-Zn alloys have been confirmed by measurements with the isoelectronic Cu-Al and Cu-Ge alloys as matrices for Mn. The valency, having the value i in pure copper, decreases slightly with increasing electron to atom ratio attaining the values 0. 9 and 0. 8 at the limiting composition in the Al and Ge alloys respectively. The apparent size of Mn in these alloys is discussed.

The Paramagnetism of Small Amounts of Mn Dissolved in Cu-Al and Cu-Ge Alloys

International Nuclear Information System (INIS)

Myers, H.P.; Westin, R.

1963-06-01

Previous measurements of the valency of Mn in Cu-Zn alloys have been confirmed by measurements with the isoelectronic Cu-Al and Cu-Ge alloys as matrices for Mn. The valency, having the value i in pure copper, decreases slightly with increasing electron to atom ratio attaining the values 0. 9 and 0. 8 at the limiting composition in the Al and Ge alloys respectively. The apparent size of Mn in these alloys is discussed

Damping behavior of polymer composites with high volume fraction of NiMnGa powders

Science.gov (United States)

Sun, Xiaogang; Song, Jie; Jiang, Hong; Zhang, Xiaoning; Xie, Chaoying

2011-03-01

Polymer composites inserted with high volume fraction (up to 70 Vol%) of NiMnGa powders were fabricated and their damping behavior was investigated by dynamic mechanical analysis. It is found that the polymer matrix has little influence on the transformation temperatures of NiMnGa powders. A damping peak appears for NiMnGa/epoxy resin (EP) composites accompanying with the martensitic transformation or reverse martensitic transformation of NiMnGa powders during cooling or heating. The damping capacity for NiMnGa/EP composites increases linearly with the increase of volume fraction of NiMnGa powders and, decreases dramatically as the test frequency increases. The fracture strain of NiMnGa/EP composites decrease with the increase of NiMnGa powders.

Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

Energy Technology Data Exchange (ETDEWEB)

Dorokhin, M. V., E-mail: dorokhin@nifti.unn.ru [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Pavlov, D. A.; Bobrov, A. I. [Lobachevsky State University, Physical Department (Russian Federation); Danilov, Yu. A.; Lesnikov, V. P.; Zvonkov, B. N.; Zdoroveyshchev, A. V. [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Kudrin, A. V. [Lobachevsky State University, Physical Department (Russian Federation); Demina, P. B. [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Usov, Yu. V.; Nikolichev, D. E.; Kryukov, R. N.; Zubkov, S. Yu. [Lobachevsky State University, Physical Department (Russian Federation)

2016-11-15

The crystal structure, composition, and magnetic, and electric-transport properties of Mn{sub x}Ga{sub y} layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn{sub x}Ga{sub y}/GaAs diode structure, in particular, the height of the Schottky diode potential barrier.

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

International Nuclear Information System (INIS)

Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

2014-01-01

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

CuGaTe2-CuAlTe2 system

International Nuclear Information System (INIS)

Bodnar', I.V.

2003-01-01

The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga,In)As with in-plane anisotropy

Science.gov (United States)

Herrera Diez, L.; Rapp, C.; Schoch, W.; Limmer, W.; Gourdon, C.; Jeudy, V.; Honolka, J.; Kern, K.

2012-04-01

Appropriate adjustment of the tensile strain in (Ga, Mn)As/(Ga,In)As films allows for the coexistence of in-plane magnetic anisotropy, typical of compressively strained (Ga, Mn)As/GaAs films, and the so-called cross-hatch dislocation pattern seeded at the (Ga,In)As/GaAs interface. Kerr microscopy reveals a close correlation between the in-plane magnetic domain and dislocation patterns, absent in compressively strained materials. Moreover, the magnetic domain pattern presents a strong asymmetry in the size and number of domains for applied fields along the easy [11¯0] and hard [110] directions which is attributed to different domain wall nucleation/propagation energies. This strong influence of the dislocation lines in the domain wall propagation/nucleation provides a lithography-free route to the effective trapping of domain walls in magneto-transport devices based on (Ga, Mn)As with in-plane anisotropy.

Oriented Mn-doped CuO nanowire arrays

International Nuclear Information System (INIS)

Han, Dongqiang; Wu, Zhaofeng; Wang, Zhihe; Yang, Shaoguang

2016-01-01

Using anodic aluminum oxide membranes as the nanoreactors and controller, oriented nanowire arrays of the diluted magnetic semiconductor Mn-doped CuO have been successfully fabricated using Mn(NO_3)_2 · 4H_2O and Cu(NO_3)_2 · 3H_2O as the starting materials. X-ray diffraction measurements showed that the as-prepared oriented nanowire arrays are of high purity. Scanning electron microscope and transmission electron microscope studies showed the nanowires are oriented, continuous and uniform with a diameter and length of about 170 nm and several tens of micrometers, respectively, and thus of a high aspect ratio. Low-temperature magnetic measurements showed the ferromagnetic property of the oriented Mn-doped CuO nanowire arrays with the critical temperature at around 80 K, which will endow them with great potential applications in spintronics in the future. (paper)

Magnetic properties of doped Mn-Ga alloys made by mechanical milling and heat treatment

Energy Technology Data Exchange (ETDEWEB)

Brown, Daniel R. [Department of Material Science and Engineering, Florida State University, Tallahassee, FL 32304 (United States); National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Han, Ke; Niu, Rongmei [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Siegrist, Theo; Besara, Tiglet [Department of Material Science and Engineering, Florida State University, Tallahassee, FL 32304 (United States); Department of Chemical Engineering, Florida Agricultural and Mechanical University-Florida State University, Tallahassee, FL 32304 (United States)

2016-05-15

Mn-Ga alloys have shown hard magnetic properties, even though these alloys contain no rare-earth metals. However, much work is needed before rare-earth magnets can be replaced. We have examined the magnetic properties of bulk alloys made with partial replacement of both the Mn and Ga elements in the Mn{sub 0.8}Ga{sub 0.2} system. Bulk samples of Mn-Ga-Bi, Mn-Ga-Al, Mn-Fe-Ga and Mn-(FeB)-Ga alloys were fabricated and studied using mechanically milling and heat treatments while altering the atomic percentage of the third element between 2.5 and 20 at%. The ternary alloy exhibits all hard magnetic properties at room temperature with large coercivity. Annealed Mn-Ga-X bulk composites exhibit high coercivities up to 16.6 kOe and remanence up to 9.8 emu/g, that is increased by 115% over the binary system.

Magnetic properties of doped Mn-Ga alloys made by mechanical milling and heat treatment

Directory of Open Access Journals (Sweden)

Daniel R. Brown

2016-05-01

Full Text Available Mn-Ga alloys have shown hard magnetic properties, even though these alloys contain no rare-earth metals. However, much work is needed before rare-earth magnets can be replaced. We have examined the magnetic properties of bulk alloys made with partial replacement of both the Mn and Ga elements in the Mn0.8Ga0.2 system. Bulk samples of Mn-Ga-Bi, Mn-Ga-Al, Mn-Fe-Ga and Mn-(FeB-Ga alloys were fabricated and studied using mechanically milling and heat treatments while altering the atomic percentage of the third element between 2.5 and 20 at%. The ternary alloy exhibits all hard magnetic properties at room temperature with large coercivity. Annealed Mn-Ga-X bulk composites exhibit high coercivities up to 16.6 kOe and remanence up to 9.8 emu/g, that is increased by 115% over the binary system.

Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

Energy Technology Data Exchange (ETDEWEB)

Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

2009-04-21

Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

Properties of different temperature annealed Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films prepared by RF sputtering

Energy Technology Data Exchange (ETDEWEB)

Yu Zhou; Liu Lian; Yan Yong; Zhang Yanxia; Li Shasha; Yan Chuanpeng; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New Energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New Energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

2012-11-15

Highlights: Black-Right-Pointing-Pointer The Cu(In,Ga)Se{sub 2} and Cu(In,Ga)2Se{sub 3.5} films follow different process to form CIGS phase. Black-Right-Pointing-Pointer Composition loss of the annealed Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films are different. Black-Right-Pointing-Pointer Hexagonal CuSe phase exhibits unique transport feature. Black-Right-Pointing-Pointer Conductivity of the CIGS films is affected by the 'variable range hopping' mechanism. - Abstract: We have investigated the effect of annealing temperature on structural, compositional, electrical properties of the one-step RF sputtered Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films. After the annealing at various temperatures, loss of Se element is significant for the Cu(In,Ga)Se{sub 2} films and meanwhile composition of the annealed Cu(In,Ga){sub 2}Se{sub 3.5} films keeps almost constant. The as-deposited Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films show amorphous structure and they follow different transformation process to form chalcopyrite structure. Electrical conductivity of the annealed CIGS films related to their chemical composition. Cu(In,Ga)Se{sub 2} films annealed at 150 Degree-Sign C show unique electron transport mechanism for the formation of hexagonal CuSe phase. Electrical conductivity of the chalcopyrite structure films are dominated by the 'variable range hopping' transport mechanism. The annealed Cu(In,Ga){sub 2}Se{sub 3.5} films present higher density of disorders than the annealed Cu(In,Ga)Se{sub 2} films for their significant Cu deficient composition.

Magnetic excitations in CuMn spin-glass alloys

International Nuclear Information System (INIS)

Tsunoda, Y.; Kunitomi, N.; Cable, J.W.

1985-01-01

Recent neutron scattering measurements have helped to clarify two important features of CuMn spin glasses. Murani and co-workers have studied the dynamical behavior of spin-glass systems and have observed characteristic ferromagnetic spin correlations with a broad distribution of relaxation times and a dynamical freezing process. By means of the polarization analysis technique, Cable and co-workers have observed the coexistence of two types of magnetic short-range order (MSRO): one is a modulated-spin structure, and the other is a ferromagnetic cluster associated with the atomic short-range order (ASRO). These ordered regions produce diffraction maxima which are found at the (1 1/2 +/- delta 0) and the (1 1/2 0) reciprocal lattice points, respectively. Both of these observations seem to be essential for understanding the CuMn spin-glass system. However, the physical relationship of these properties is not yet understood. The authors have studied the inelastic scattering of neutrons around the magnetic diffuse peak positions of a Cu/sub 78.7/Mn/sub 21.3/ single crystal. The spin-glass freezing temperature of a CuMn alloy with this Mn concentration is estimated to be T/sub f/ approx. 90 K. Most of the data were taken by scanning along the [0 1 0] direction from the (1 0 0) to the (1 1 0) reciprocal lattice points

Preparation and magnetic properties of multiferroic CuMnO2 nanoparticles.

Science.gov (United States)

Kurokawa, Akinobu; Yanoh, Tkuya; Yano, Shinya; Ichiyanagi, Yuko

2014-03-01

CuMnO2 nanoparticles with diameters of 64 nm were synthesized by a novel wet chemical method. An optimized two-step annealing method was developed through the analysis of thermogravimetric differential thermal analysis (TG-DTA) measurements in order to obtain single-phase CuMnO2. A sharp exothermic peak was observed in the DTA curve at approximately 500 K where structural changes of the copper oxides and manganese oxides in the precursor are expected to occur. It is believed that Cu+ ions were oxidized to Cu2+ ions and that Mn2+ ions were oxidized to Mn3+ ions in the Cu-Mn-O system. Deoxidization reactions were also found at approximately 1200 K. The optimized annealing temperature for the first step was determined to be 623 K in air. The optimized annealing temperature for the second step was 1173 K in an Ar atmosphere. Magnetization measurements suggested an antiferromagnetic spin ordering at approximately 50 K. It was expected that Mn3+ spin interactions induced magnetic phase transition affected by definite temperature.

Spatial structure of single and interacting Mn acceptors in GaAs

Science.gov (United States)

Koenraad, Paul

2005-03-01

Ferromagnetic semiconductors such as Ga1-xMnxAs are receiving a lot of attention at the moment because of their application in spintronic devices. However, despite intense study of deep acceptors in III-V semiconductors such as MnGa, little information has been obtained on their electronic properties at the atomic scale. Yet the spatial shape of the Mn acceptor state will influence the hole-mediated Mn-Mn coupling and thus all of the magnetic properties of ferromagnetic semiconductors such as Ga1-xMnxAs. This study presents an experimental and theoretical description of the spatial symmetry of the Mn acceptor wave-function in GaAs. We present measurements of the spatial mapping of the anisotropic wavefunction of a hole localized at a Mn acceptor. To achieve this, we have used the STM tip not only to image the Mn acceptor but also to manipulate its charge state A^0/A^- at room temperature. Within an envelope function effective mass model (EFM) the anisotropy in the acceptor wave-function can be traced to the influence of the cubic symmetry of the GaAs crystal which selects specific d-states that mix into the ground state due to the spin-orbit interaction in the valence band. Comparison with calculations based on a tight-binding model (TBM) for the Mn acceptor structure supports this conclusion. Using the same experimental and theoretical approach we furthermore explored the interaction between Mn acceptors directly by analyzing close Mn-Mn pairs, which were separated by less than 2 nm. We will discuss some implications of these results for Mn delta-doped layers grown on differently oriented growth surfaces.

Voltammetric and X-ray diffraction analysis of the early stages of the thermal crystallization of mixed Cu,Mn oxides

Czech Academy of Sciences Publication Activity Database

Grygar, Tomáš; Rojka, T.; Bezdička, Petr; Večerníková, Eva; Kovanda, F.

2004-01-01

Roč. 8, č. 4 (2004), s. 252-259 ISSN 1432-8488 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : amorphous phases * Cu,Mn oxides * hydrotalcite Subject RIV: CA - Inorganic Chemistry Impact factor: 0.984, year: 2004

Effect of Ce addition on microstructure of Al20Cu2Mn3 twin phase in an Al–Cu–Mn casting alloy

International Nuclear Information System (INIS)

Chen Zhongwei; Chen Pei; Li Shishun

2012-01-01

Highlights: ► Rare earth element Ce can retard the formation of the Al 20 Cu 2 Mn 3 twin phase in an Al–Cu–Mn casting alloy. ► Patterns of the particles of the Al 20 Cu 2 Mn 3 phase in Al–Cu–Mn free Ce alloy are more diverse. ► The symmetry of neighboring components of twins is characterized by glide reflection and reflection. ► The twins of Al 20 Cu 2 Mn 3 phase can enhance the mechanical properties of the Al–Cu–Mn casting alloys. - Abstract: Effects of Ce addition on microstructure of Al 20 Cu 2 Mn 3 twin phase and mechanical properties of an Al–Cu–Mn casting alloy were investigated by transmission electron microscopy, selected area electron diffraction, high resolution transmission electron microscopy and tensile test. The results show that rare earth element Ce can retard the formation of the Al 20 Cu 2 Mn 3 phase in the Al–Cu–Mn alloy. Compared with the Ce containing alloy, patterns of particles of the Al 20 Cu 2 Mn 3 phase in the Al–Cu–Mn free Ce alloy are more diverse. The symmetry of neighboring components of twins is characterized by glide reflection and reflection. In addition, twins of the Al 20 Cu 2 Mn 3 phase can enhance the mechanical properties of the Al–Cu–Mn alloy.

Effect of MnCuFe{sub 2}O{sub 4} content on magnetic and dielectric properties of poly (O-Phenylenediamine)/MnCuFe{sub 2}O{sub 4} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Kannapiran, Nagarajan [PG and Research Department of Chemistry, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu (India); Muthusamy, Athianna, E-mail: muthusrkv@gmail.com [PG and Research Department of Chemistry, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu (India); Chitra, Palanisamy [PG and Research Department of Chemistry, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu (India)

2016-03-01

Poly o-phenylenediamine (PoPD)/MnCuFe{sub 2}O{sub 4} nanocomposites with three different ratios of MnCuFe{sub 2}O{sub 4} (10%, 20%, 30% w/w) were synthesized by in-situ oxidative chemical polymerization method ammonium persulphate used as oxidant, while MnCuFe{sub 2}O{sub 4} nanoparticles was prepared by auto-combustion method. The structure, morphology and magnetic properties of synthesized PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites were characterized by FT-IR, UV–visible absorption spectra, X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Thermogravimetric analysis (TGA) and Vibrating sample magnetometer (VSM). FTIR spectra and XRD were confirmed the formation of the PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites. The morphology of PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites is visualized through SEM and TEM. The spherical morphology of the PoPD was confirmed using SEM analysis. Dielectric properties of PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites at different temperatures have been performed in the frequency range of 50 Hz–5 MHz. The optical absorption experiments of PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites reveal that the direct transition with an energy band gap is around 2 eV. - Highlights: • Green synthesis of PoPD (the polymerization carried out only in aqueous medium) by in-situ chemical polymerization method. • For the first time, PoPD incorporated with MnCuFe{sub 2}O{sub 4} with lesser particle size. • The auto combustion reaction, support to achieve less particle size. • Ferrite content affects the magnetic properties of the nanocomposites.

Generalized stacking fault energies, cleavage energies, ionicity and brittleness of Cu(Al/Ga/In)Se2 and CuGa(S/Se/Te)2

Science.gov (United States)

Xue, H. T.; Tang, F. L.; Gruhn, T.; Lu, W. J.; Wan, F. C.; Rui, Z. Y.; Feng, Y. D.

2014-04-01

We calculate the generalized stacking fault (GSF) energies and cleavage energies γcl of the chalcopyrite compounds CuAlSe2, CuGaSe2, CuInSe2, CuGaS2 and CuGaTe2 using first principles. From the GSF energies, we obtain the unstable stacking fault energies γus and intrinsic stacking fault energies γisf. By analyzing γus and γisf, we find that the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) direction is the easiest slip direction for these five compounds. Also, for CuInSe2, it is most possible to undergo a dislocation-nucleation-induced plastic deformation along the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) slip direction. We show that the (1 1 2) plane is the preferable plane for fracture in the five compounds by comparing γcl of the (0 0 1) and (1 1 2) planes. It is also found that both γus and γcl decrease as the cationic or anionic radius increases in these chalcopyrites, i.e. along the sequences CuAlSe2 → CuGaSe2 → CuInSe2 and CuGaS2 → CuGaSe2 → CuGaTe2. Based on the values of the ratio γcl/γus, we discuss the brittle-ductile properties of these compounds. All of the compounds can be considered as brittle materials. In addition, a strong relationship between γcl/γus and the total proportion of ionic bonding in these compounds is found.

Free standing CuO-MnO2 nanocomposite for room temperature ammonia sensing

Science.gov (United States)

Bhuvaneshwari, S.; Papachan, Seethal; Gopalakrishnan, N.

2017-05-01

CuO nanostructures and CuO-MnO2 nanocomposite were successfully synthesized using hydrothermal method without any aid of growth controlling agents. The synthesized CuO nanostructures have monoclinic structure. The XRD pattern of CuO-MnO2 observed with mixed phases of monoclinic CuO and birnessite-type MnO2 which confirms the formation of nanocomposite. SEM images revealed the turmeric-like morphology for CuO and intercalated sheets with flowers on the surface for CuO-MnO2. The length and breadth of turmeric-like structure is about 642.2 nm and 141.8 nm, respectively. The band gap of 1.72 eV for CuO nanostructure and 1.9 eV for CuO-MnO2 nanocomposite were observed from the absorption spectra. The free standing devices of CuO-MnO2 showed nearly a 3 fold increase sensing response to ammonia at room temperature when compared to the constituent CuO. The composite sensor showed response time of 120 s and recovered within 600 s. This enhanced response can be asserted to the peculiar morphology of the composite that provides more adsorption site for gas diffusion to take place.

Effects of hydrogen on Mn-doped GaN: A first principles calculation

International Nuclear Information System (INIS)

Wu, M.S.; Xu, B.; Liu, G.; Lei, X.L.; Ouyang, C.Y.

2013-01-01

First-principles calculations based on spin density functional theory are performed to study the effects of H on the structural, electronic and magnetic properties of the Mn-doped GaN dilute magnetic semiconductors. Our results show that the interstitial H atom prefers to bond with N atom rather than Mn atom, which means that H favors to form the N–H complex rather than Mn–H complex in the Mn-doped GaN. After introducing one H atom in the system, the total magnetic moment of the Mn-doped GaN increases by 25%, from 4.0μ B to 5.0μ B . The physics mechanism of the increase of magnetic moment after hydrogenation in Mn-doped GaN is discussed

Isothermal section of the Er-Cu-Ga ternary system at 973 K

Energy Technology Data Exchange (ETDEWEB)

Belgacem, B. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Pasturel, M., E-mail: mathieu.pasturel@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Tougait, O. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Nouri, S. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Bekkachi, H. El; Peron, I. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Hassen, R. Ben [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Noeel, H. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France)

2012-08-05

Highlights: Black-Right-Pointing-Pointer The isothermal section at 973 K of the Er-Cu-Ga ternary phase diagram has been established for the first time. Black-Right-Pointing-Pointer Eight extensions of binary compounds in the ternary domain have been identified, as well as six ternary intermediate solid solutions characterized by an important Cu/Ga mutual substitution. Black-Right-Pointing-Pointer Magnetic properties of Er{sub 3}(Cu,Ga){sub 11} are reported for the first time and confirms the paramagnetic Curie-Weiss behavior of all the six intermediate intermetallics. - Abstract: Phase relations in the Er-Cu-Ga ternary system have been established at 973 K by means of powder X-ray diffraction complemented by energy dispersive spectroscopy coupled to scanning electron microscopy. The isothermal section of the phase diagram comprises eight extensions of binaries into the ternary system, ErCu{sub 1-x}Ga{sub x} (x {<=} 0.5), ErCu{sub 2-x}Ga{sub x} (x {<=} 1.1), ErCu{sub 5-x}Ga{sub x} (x {<=} 0.5), Er{sub 5}Cu{sub x}Ga{sub 3-x} (x {<=} 0.60), Er{sub 3}Cu{sub x}Ga{sub 2-x} (x {<=} 0.24), ErCu{sub x}Ga{sub 1-x} (x {<=} 0.10), ErCu{sub x}Ga{sub 2-x} (x {<=} 0.30) and ErCu{sub x}Ga{sub 3-x} (x {<=} 0.35), as well as six ternary intermediate phases, ErCu{sub x}Ga{sub 2-x} (0.4 {<=} x {<=} 0.7), Er{sub 14}Cu{sub 51-x}Ga{sub x} (5.5 {<=} x {<=} 11.0), ErCu{sub 5-x}Ga{sub x} (0.8 {<=} x {<=} 2.3), Er{sub 2}Cu{sub 17-x}Ga{sub x} (4.9 {<=} x {<=} 8.0), ErCu{sub 12-x}Ga{sub x} (5.7 {<=} x {<=} 6.7) and Er{sub 3}Cu{sub x}Ga{sub 11-x} (1.5 {<=} x {<=} 4.4), all deriving from binary structure-types.

Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

Directory of Open Access Journals (Sweden)

A Harsono Soepardjo

2010-10-01

Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

Local Structure and Magnetism of (Ga,Mn)As

CERN Document Server

AUTHOR|(CDS)2093111; Temst, Kristiaan

Throughout the years, dilute magnetic semiconductors (DMS) have emerged as promising materials for semiconductor-based spintronics. In particular, (Ga,Mn)As has become the model system in which to explore the physics of carrier-mediated ferromagnetism in semiconductors and the associated spintronic phenomena, with a number of interesting functionalities and demonstrated proof-of-concept devices. It constitutes the perfect example of how the magnetic behavior of DMS materials is strongly influenced by local structure. In this thesis, we address key aspects of the interplay between local structure and ferromagnetism of (Ga,Mn)As. We unambiguously identify the lattice site occupied by interstitial Mn as the tetrahedral interstitial site with As nearest neighbors T(As). We show, furthermore, that the T(As) is the most energetically favorable site regardless of the interstitial atom forming or not complexes with substitutional Mn. We also evaluate the thermal stability of both interstitial and substitutional Mn si...

Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

International Nuclear Information System (INIS)

Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

2014-01-01

We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

Energy Technology Data Exchange (ETDEWEB)

Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

2016-02-28

Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

XANES Studies of Mn K and L3,2 Edges in the (Ga,Mn)As Layers Modified by High Temperature Annealing

International Nuclear Information System (INIS)

Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Jakiela, R.; Demchenko, I.N.; Sadowski, J.; Holub-Krappe, E.; Persson, A.; Arvanitis, D.

2008-01-01

Ga 1-x Mn x As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Ga 1-x Mn x As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not ob- serve changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms. (authors)

Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

Science.gov (United States)

Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud-Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jianjun

2018-02-01

Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 1016 ions/cm2 and 5 × 1016 ions/cm2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS). The XPS peaks of Ga 3 d, Ga 2 p, N 1 s, Mn 2 p and C 1 s were recorded in addition to a full survey of the samples. The doublet peaks of Ga 2 p for pure GaN were observed blue-shifted when compared with elemental Ga, and appeared further shifted to higher energies for the implanted samples. These observations point to changes in the bonds and the chemical environment of the host as a result of ion implantation. The results revealed broadening of the N 1 s peak after implantation, which is interpreted in terms of the presence of N-Mn bonds in addition to N-Ga bonds. The XPS spectra of Mn 2 p recorded for ion-implanted samples indicated splitting of Mn 2 p 1/2 and Mn 2 p 3/2 peaks higher than that for metallic Mn, which helps rule out the possibility of clustering and points to substitutional doping of Mn. These observations provide a framework that sheds light on the local environment of the material for understanding the mechanism of magnetic exchange interactions in Mn:GaN based diluted magnetic semiconductors.

L1{sub 0} stacked binaries as candidates for hard-magnets. FePt, MnAl and MnGa

Energy Technology Data Exchange (ETDEWEB)

Matsushita, Yu-ichiro [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Applied Physics, The University of Tokyo (Japan); Madjarova, Galia [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physical Chemistry, Faculty of Chemistry and Pharmacy, Sofia University (Bulgaria); Flores-Livas, Jose A. [Department of Physics, Universitaet Basel (Switzerland); Dewhurst, J.K.; Gross, E.K.U. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Felser, C. [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Sharma, S. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physics, Indian Institute of Technology, Roorkee, Uttarkhand (India)

2017-08-15

We present a novel approach for designing new hard magnets by forming stacks of existing binary magnets to enhance the magneto crystalline anisotropy. This is followed by an attempt at reducing the amount of expensive metal in these stacks by replacing it with cheaper metal with similar ionic radius. This strategy is explored using examples of FePt, MnAl and MnGa. In this study a few promising materials are suggested as good candidates for hard magnets: stacked binary FePt{sub 2}MnGa{sub 2} in structure where each magnetic layer is separated by two non-magnetic layers, FePtMnGa and FePtMnAl in hexagonally distorted Heusler structures and FePt{sub 0.5}Ti{sub 0.5}MnAl. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation-Properties Relation of Mn-Cu Hopcalite Catalyst

OpenAIRE

Ardita Mele; Ilo Mele; Altin Mele

2012-01-01

Problem statement: The Mn-Cu hopcalite catalyst was used for the conversion of CO to CO2 at low temperatures. It was the catalyst of choice in the gas masks for respiratory protection in mines, aircrafts, military, spatial laboratories. Approach: The efficiency of hopcalite catalyst depends on its surface parameters. Its surface characteristics can be influenced from the chosen way of the MnO2 and CuO precipitation and from the pressure of pelletizing. Results: The hopcalite samples has been ...

Ductile shape memory alloys of the Cu-Al-Mn system

International Nuclear Information System (INIS)

Kainuma, R.; Takahashi, S.; Ishida, K.

1995-01-01

Cu-Al-Mn shape memory alloys with enhanced ductility have been developed by decreasing the degree of order in the β parent phase. Cu-Al-Mn alloys with Al contents lower than 18% exhibit good ductility with elongations of about 15% and excellent cold-workability arising from a lower degree of order in the Heusler (L21) β 1 parent phase, without any loss in their shape memory behavior. In this paper the mechanical and shape memory characteristics, such as the cold-workability, the Ms temperatures, the shape memory effect and the pseudo-elasticity of such ductile Cu-Al-Mn alloys are presented. (orig.)

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Kasama, T., E-mail: tk@cen.dtu.dk; Yazdi, S. [Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Thuvander, M. [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Siusys, A. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa (Poland); Gontard, L. C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), C/Américo Vespucio 49, 41092 Seville (Spain); Kovács, A.; Duchamp, M.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich (Germany); Gustafsson, A. [Solid State Physics and the Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden); Sadowski, J. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa (Poland); MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden)

2015-08-07

Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 °C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography. Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga{sub 0.82}Mn{sub 0.18} nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 ± 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga{sub 0.82}Mn{sub 0.18} nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process.

Properties of the CuGaSe2 and CuInSe2 (001) surface

International Nuclear Information System (INIS)

Deniozou, T.

2005-01-01

The main task of this work was to investigate the (001) CuGaSe 2 and CuInSe 2 surface in dependence of preparation and stoichiometry. The knowledge of the atomic structure as well as other surface properties is important in respect to optimization of novel thin film solar cells. For the characterization of the layers mainly Auger electron Spectroscopy, low-energy electron diffraction and photoelectron spectroscopy were implemented. The development of an appropriate procedure with Ar + sputtering and annealing combined with decapping enabled the preparation of clean and well-ordered surfaces. Different surface structures were observed in dependence of the layer preparation and composition. A (4 x 1) reconstruction was observed for the first time on CuGaSe 2 layers grown with a moderate Cu-excess after preparation by sputtering and annealing. Similarly a (4 x 2) reconstruction was detected on CuInSe2 surfaces of Cu-poor layers. A reconstruction could be also observed on Cu-poorer layers, however the facets/steps could not be completely removed. Cu-richer layers were facet-free, however the observed reconstruction was also weaker. Thus it was shown that in contrary to recent expectations, according to which only the (112) surface is stable, also the (001) can be stable under particular conditions. The appearance of facets or steps is correlated with the presence of CuIn 3 Se 5 or CuGa 3 Se 5 phases. This information is furthermore important for the understanding of grain boundaries in polycrystalline CuGaSe 2 and CuInSe 2 . Binding energy shifts were observed for the first time on all Se3d, In4d, Ga3d, Cu3d core levels of the reconstructed surfaces. By comparison with results from the literature from the similar ZnSe (100) surface a modell for the (4 x 2) reconstruction was proposed. The surface components in the Se3d, In4d and Cu3d emission were attributed to Se dimers or In and Cu adatoms respectively. The x 1 periodicity of the (4 x 1) reconstruction of CuGaSe 2 is

Magnetoresistance in ferromagnetic shape memory alloy NiMnFeGa

International Nuclear Information System (INIS)

Liu, Z.H.; Ma, X.Q.; Zhu, Z.Y.; Luo, H.Z.; Liu, G.D.; Chen, J.L.; Wu, G.H.; Zhang Xiaokai; Xiao, John Q.

2011-01-01

The magnetoresistance (MR){=[R(H)-R(0)]/R(0)} properties in ferromagnetic shape memory alloy of NiMnFeGa ribbons and single crystals, and NiFeGa ribbons have been investigated. It is found that the NiMnFeGa melt-spun ribbon exhibited GMR effect, arising from the spin-dependent scattering from magnetic inhomogeneities consisting of antiferromagnetically coupled Mn atoms in B2 structure. In the absence of these magnetic inhomogeneities, Heusler alloys seem to show a common linear MR behavior at around 0.8T C , regardless of sample structures. This may be explained by the s-d model. At low temperatures, conventional AMR behaviors due to the spin-orbital coupling are observed. This is most likely due to the diminished MR from s-d model because of much less spin fluctuation, and is not associated with martensite phase. MR anomaly at intermediate field (ρ perpendicular >ρ || ) is also observed in single crystal samples, which may be related to unique features of Heusler alloys. - Highlights: → NiMnFeGa melt-spun ribbon exhibited GMR effect with a large negative MR up to -13%. → GMR behavior is arising from the spin-dependent scattering from magnetic inhomogeneities. → In the absence of these magnetic inhomogeneities, Heusler alloys seem to show a common linear MR behavior at around 0.8T C . → Conventional AMR behaviors due to the spin-orbital coupling are observed in NiMnFeGa single crystal and Ni 2 FeGa ribbon samples at low temperatures.

Spin disorder effect in anomalous Hall effect in MnGa

Science.gov (United States)

Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

2017-12-01

We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

Dislocation mechanism of twinning in Ni-Mn-Ga

Czech Academy of Sciences Publication Activity Database

Zárubová, Niva; Ge, Y.; Gemperlová, Juliana; Gemperle, Antonín; Hannula, S.-P.

2012-01-01

Roč. 5, č. 1 (2012), "1250006-1"-"1250006-4" ISSN 1793-6047 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391; GA AV ČR IAA100100920 Institutional research plan: CEZ:AV0Z10100520 Keywords : Ni-Mn-Ga shape memory alloy * martensitic transformation * in situ TEM straining Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.270, year: 2012

27Al, 63Cu NMR spectroscopy and electrical transport in Heusler Cu-Mn-Al alloy powders

Science.gov (United States)

Nadutov, V. M.; Perekos, A. O.; Kokorin, V. V.; Trachevskii, V. V.; Konoplyuk, S. M.; Vashchuk, D. L.

2018-02-01

The ultrafine powder of the Heusler Cu-13,1Mn-12,6Al (wt.%) alloy produced by electrical spark dispersion (ESD) in ethanol and the pellets prepared by pressing of the powders and aged in various gas environment (air, Ar, vacuum) were studied by XRD, nuclear magnetic resonance, magnetic and electric transport methods. The constituent phases were identified as b.c.c. α-Cu-Mn-Al, f.c.c. γ-Cu-Mn-Al, Cu2MnAl, and oxides. The sizes of the coherently scattering domains (CSD) and the saturation magnetizations were in the range of 4-90 nm and 0-1.5 Am2/kg, respectively. 27Al and 63Cu NMR spectra of the powders and pellets have shown hyperfine structure caused by contributions from atomic nuclei of the constituent phases. The aging of pellets in different gas environments had effect on their phase composition but no effect on dispersion of the phases. In contrast to the as-cast alloy, electrical resistance of the pellets evidenced semiconducting behavior at elevated temperatures due to the presence of metal oxides formed on the surfaces of nanoparticles.

Synthesis and magnetic properties of hexagonal Y(Mn,Cu)O3 multiferroic materials

International Nuclear Information System (INIS)

Jeuvrey, L.; Peña, O.; Moure, A.; Moure, C.

2012-01-01

Single-phase hexagonal-type solid solutions based on the multiferroic YMnO 3 material were synthesized by a modified Pechini process. Copper doping at the B-site (YMn 1−x Cu x O 3 ; x 1+y MnO 3 ; y 3+ two-dimensional lattice. The magnetic transition at T N decreases from 70 K down to 49 K, when x(Cu) goes from 0 to 15 at%. Weak ferromagnetic Mn 3+ –Mn 4+ interactions created by the substitution of Mn 3+ by Cu 2+ , are visible through the coercive field and spontaneous magnetization but do not modify the overall magnetic frustration. Presence of Mn 3+ –Mn 4+ pairs leads to an increase of the electrical conductivity due to thermally-activated small-polaron hopping mechanisms. Results show that local ferromagnetic interactions can coexist within the frustrated state in the hexagonal polar structure. - Highlights: ► Hexagonal-type solid solutions of Y(Mn,Cu)O 3 synthesized by Pechini process. ► Chemical substitution at B site inhibits geometrical magnetic frustration. ► Magnetic transition decreases with Cu-doping. ► Local ferromagnetic Mn–Mn interactions coexist with the frustrated state.

Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

International Nuclear Information System (INIS)

Riahi, H.; Thevenard, L.; Maaref, M.A.; Gallas, B.; Lemaître, A.; Gourdon, C

2015-01-01

A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO 2 /ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO 2 on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO 2 and ZnO on the ferromagnetic properties of GaMnAs

Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements

Directory of Open Access Journals (Sweden)

Jae-Hyun Lee

2016-12-01

Full Text Available We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial Al0.75Ga0.25As layer, free-standing metallic GaMnAs (with ~6% Mn microsheets (with TC ~85 K with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer. From finite element analysis, symmetrically placed and serpentine-shaped electrical leads induce minimal thermal stress at low temperatures. From magnetotransport measurements, changes in magnetic anisotropy are readily observed.

Magnetic properties of MnAs nanoclusters embedded in a GaAs semiconductor matrix

International Nuclear Information System (INIS)

Hai, Pham Nam; Takahashi, Keisuke; Yokoyama, Masafumi; Ohya, Shinobu; Tanaka, Masaaki

2007-01-01

We have clarified fundamental magnetic properties of MnAs nanoclusters (10 nm in diameter) embedded in a thin GaAs matrix (referred to as GaAs:MnAs) through tunneling magnetoresistance (TMR) characteristics of magnetic tunnel junctions (MTJs) consisting of a GaAs:MnAs thin film and a MnAs metal thin film as ferromagnetic electrodes. Although MnAs nanoclusters have coercive forces as small as 150 Oe at 7 K, they show unusually high blocking temperature, which is as large as 300 K. The remanent magnetization of the MnAs nanocluster system linearly decreases with increasing temperature. Those magnetic behaviors cannot be explained by the non-interacting particle model, revealing the important existence of dipolar interactions in MnAs nanocluster system

Electrodeposition and Characterization of Mn-Cu-Zn Alloys for Corrosion Protection Coating

Science.gov (United States)

Tsurtsumia, Gigla; Gogoli, David; Koiava, Nana; Kakhniashvili, Izolda; Jokhadze, Nunu; Lezhava, Tinatin; Nioradze, Nikoloz; Tatishvili, Dimitri

2017-12-01

Mn-Cu-Zn alloys were electrodeposited from sulphate bath, containing citrate or EDTA and their mixtures as complexing ligands. The influence of bath composition and deposition parameters on alloys composition, cathodic current efficiency and structural and electrochemical properties were studied. At a higher current density (≥ 37.5 A dm-2) a uniform surface deposit of Mn-Cu-Zn was obtained. Optimal pH of electrolyte (0.3 mol/dm3Mn2+ + 0.6 mol/dm3 (NH4)2SO4 +0.1 mol/dm3Zn2++0.005 mol/dm3 Cu2++ 0.05mol/dm3Na3Cit + 0.15mol/dm3 EDTA; t=300C; τ=20 min) for silvery, nonporous coating of Mn-Cu-Zn alloy was within 6.5-7.5; coating composition: 71-83% Mn, 6-7.8% Cu, 11.5-20% Zn, current efficiency up to 40%. XRD patterns revealed BCT (body centred tetragonal) γ-Mn solid phase solution (lattice constants a=2.68 Å c=3.59 Å). Corrosion measurements of deposited alloys were performed in aerated 3.5% NaCl solution. The corrosion current density (icorr) of the electrodeposited alloys on carbon steel was 10 times lower than corrosion rate of pure zinc and manganese coatings. Triple alloy coatings corrosion potential (Ecorr = -1140 mV vs. Ag/AgCl) preserved negative potential value longer (more than three months) compared to carbon steel substrate (Ecorr = -670 mV vs. Ag/AgCl). Tafel polarization curves taken on Mn-Cu-Zn alloy coating in aerated 3.5% NaCl solution did not show a typical passivation behaviour which can be explained by formation oflow solubility of adherent corrosion products on the alloy surface. Corrosion test of Mn-Cu-Zn electrocoating in chlorine environment shows that it is the best cathodic protective coating for a steel product.

Dislocation structure evolution and characterization in the compression deformed Mn-Cu alloy

International Nuclear Information System (INIS)

Zhong, Y.; Yin, F.; Sakaguchi, T.; Nagai, K.; Yang, K.

2007-01-01

Dislocation densities and dislocation structure arrangements in cold compressed polycrystalline commercial M2052 (Mn-20Cu-5Ni-2Fe) high damping alloy with various strains were determined in scanning mode by X-ray peak profile analysis and electron backscatter diffraction (EBSD). The results indicate that the Mn-Cu-Ni-Fe alloy has an evolution behavior quite similar to the dislocation structure in copper. The dislocation arrangement parameter shows a local minimum in the transition range between stages III and IV that can be related to the transformation of the dislocation arrangement in the cell walls from a polarized dipole wall (PDW) into a polarized tile wall (PTW) structure. This evolution is further confirmed by the results of local misorientation determined by EBSD. In addition, during deformation, the multiplication of dislocation densities in the MnCu alloy is significantly slower than that in copper, and the transition of the dislocation structure is strongly retarded in the MnCu alloy compared with copper. These results can be explained by the mechanism of elastic anisotropy on the dislocation dynamics, as the elastic anisotropy in the MnCu alloy is larger than that in copper, which can strongly retard the multiplication of the dislocation population and the transformation of the dislocation structure. These results are important for research into the plastic working behavior of Mn-Cu-Ni-Fe high damping alloy

Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

Science.gov (United States)

Koo, Jaseok; Kim, Sammi; Cheon, Taehoon; Kim, Soo-Hyun; Kim, Woo Kyoung

2018-03-02

Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se 2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe 2 and Cu(InGa)Se 2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se 2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min.

Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

2010-01-01

Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Riahi, H., E-mail: hassenriahi1987@gmail.com [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Thevenard, L. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Maaref, M.A. [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Gallas, B. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Lemaître, A. [Laboratoire de Photonique et de Nanostructures – CNRS, Route de Nozay, 91460 Marcoussis (France); Gourdon, C [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France)

2015-12-01

A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO{sub 2} buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO{sub 2} layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO{sub 2}/ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO{sub 2} on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO{sub 2} and ZnO on the ferromagnetic properties of GaMnAs.

Complex impedance spectra of chip inductor using Li-Zn-Cu-Mn ferrite

International Nuclear Information System (INIS)

Nakamura, Tatsuya; Naoe, Masayuki; Yamada, Yoshihiro

2006-01-01

A multi-layer chip inductor (MCI) was fabricated using polycrystalline Li-Zn-Cu-Mn ferrite and the green-sheet technique, and its complex impedance spectrum was evaluated with the help of numerical calculations. The complex impedance spectra of the MCI component using Ni-Zn-Cu ferrite, which have been widely used for this application, were very sensitive to the residual stress and deviated much from the calculated values; however, it was found that the complex impedance spectrum of the MCI component using Li-Zn-Cu-Mn ferrite is quite well reproduced by calculation, where the complex permittivity and permeability of the polycrystalline ferrite as well as the MCI dimensions, were used. It implied that the magneto-striction effect was negligible in case of MCI using Li-Zn-Cu-Mn ferrite, and that the difference was related to magneto-strictive coefficient of the polycrystalline ferrite. Consequently, utilization of Li-Zn-Cu-Mn ferrite enabled us to easily design the complex impedance of MCI component

Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Q.; MacDonald, A. H.

2003-01-01

Roč. 83, č. 2 (2003), s. 320-322 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * dc transport properties * (Ga, Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.049, year: 2003

Interfacial, electrical, and spin-injection properties of epitaxial Co2MnGa grown on GaAs(100)

DEFF Research Database (Denmark)

Damsgaard, Christian Danvad; Hickey, M. C.; Holmes, S. N.

2009-01-01

The interfacial, electrical, and magnetic properties of the Heusler alloy Co2MnGa grown epitaxially on GaAs(100) are presented with an emphasis on the use of this metal-semiconductor combination for a device that operates on the principles of spin-injection between the two materials. Through...... was monitored in situ by reflection high energy electron diffraction and the bulk composition was measured ex situ with inductively coupled plasma optical emission spectroscopy. The Co2MnGa L21 cubic structure is strained below a thickness of 20 nm on GaAs(100) but relaxed in films thicker than 20 nm...

Effect of foliar applied (Zn, Fe, Cu and Mn) in citrus production

International Nuclear Information System (INIS)

Khurshid, F.; Sarwar, S.; Khattak, R.A.

2008-01-01

A study was conducted to evaluate the impact of micronutrients (Zn, Fe, Cu and Mn) on sweet orange (Citrus Sinensis L.), blood red var., on farmer's orchard at Khanpur, district Haripur, NWFP, during 2002-03. Micronutrients were applied in foliar sprays over the canopy of each tree. The main effects and interactions of Zinc sulphate (Zn), iron sulphate (Fe), Copper Sulphate (Cu) and Manganese Sulphate (Mn) were studied in factorial combinations. A basal dose of nitrogen, phosphorus and potassium was applied at the rate 1.5, 1 and 1 kg tree/sup -1/. Zn, Fe, Cu and Mn were applied alone and in various combinations at the rate 0.115, 0.057, 0.05 and 0.13 kg in 100 liters of water. Application of micronutrients significantly increased Zn, Fe, Cu and Mn concentrations in leaves, compared with control. Zn treatments significantly increased the yield, number of fruit and total sugar. Manganese treatments significantly increased the total soluble solids and reduced the acidity of fruit juice. Other quality parameters, including fruit size, percent peel, percent pulp, sugar as well as total soluble solids, were improved with the application of Zn, Fe, Cu and Mn. (author)

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

DEFF Research Database (Denmark)

Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

2003-01-01

Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

In vivo evaluation of a radiogallium-labeled bifunctional radiopharmaceutical, Ga-DOTA-MN2, for hypoxic tumor imaging.

Science.gov (United States)

Sano, Kohei; Okada, Mayumi; Hisada, Hayato; Shimokawa, Kenta; Saji, Hideo; Maeda, Minoru; Mukai, Takahiro

2013-01-01

On the basis of the findings obtained by X-ray crystallography of Ga-DOTA chelates and the drug design concept of bifunctional radiopharmaceuticals, we previously designed and synthesized a radiogallium-labeled DOTA chelate containing two metronidazole moieties, (67)Ga-DOTA-MN2, for hypoxic tumor imaging. As expected, (67)Ga-DOTA-MN2 exhibited high in vivo stability, although two carboxyl groups in the DOTA skeleton were conjugated with metronidazole moieties. In this study, we evaluated (67/68)Ga-DOTA-MN2 as a nuclear imaging agent for hypoxic tumors. (67)Ga-labeling of DOTA-MN2 with (67)GaCl(3) was achieved with high radiochemical yield (>85%) by 1-min of microwave irradiation (50 W). The pharmacokinetics of (67)Ga-DOTA-MN2 were examined in FM3A tumor-bearing mice, and compared with those of (67)Ga-DOTA-MN1 containing one metronidazole unit and (67)Ga-DOTA. Upon administration, (67)Ga-DOTA-MN2 exhibited higher accumulation in the implanted tumors than (67)Ga-DOTA. Tumor-to-blood ratios of (67)Ga-DOTA-MN2 were about two-fold higher than those of (67)Ga-DOTA-MN1. Autoradiographic analysis showed the heterogeneous localization of (67)Ga-DOTA-MN2 in the tumors, which corresponds to hypoxic regions suggested by well-established hypoxia marker drug, pimonidazole. Furthermore, in positron emission tomography (PET) study, the tumors of mice administered (68)Ga-labeled DOTA-MN2 were clearly imaged by small-animal PET at 1 h after administration. This study demonstrates the potential usefulness of (67/68)Ga-DOTA-MN2 as a nuclear imaging agent for hypoxic tumors and suggests that two functional moieties, such as metronidazole, can be conjugated to radiogallium-DOTA chelate without reducing the complex stability. The present findings provide useful information about the chemical design of radiogallium-labeled radiopharmaceuticals for PET and single photon emission computed tomography (SPECT) studies.

A photoemission study of Mn grown on GaAs(100)

International Nuclear Information System (INIS)

James, D.; Riley, J.; Leckey, R.; Usher, B.; Sieber, N.; Seyller, Th.; Ley, L.

2002-01-01

Full text: Metal contacts on semiconductors have been an important area for device manufacture. The possibility of lattice matched growth of magnetic metals on semiconductors was once thought to be a unobtainable goal. More recently it has been found that transition metals can react with the semiconductor substrates, forming another lattice with a more comparable lattice constant, from which epitaxial growth can then proceed. Al grows epitaxially on GaN even with a lattice mismatch greater than 10%. In this instance, Al displaces Ga being driven by a larger heat of formation to produce an AlN buffer layer, on which Al can then grow. This paper investigates the room temperature deposition of Mn onto GaAs(100) at room temperature. The Photoemission study was carried out at the UEL56/2 PGM2 beam line at BESSY II in Berlin, Germany. Synchrotron radiation was used to observe the surface as thin layers of Mn were deposited. The interaction of manganese with the substrate tends to donate electron density to neighbouring atoms, decreasing binding energy. No further segregation of substitutional or interstitial Mn and Ga can be seen from angle dependence data at this temperature, with metallic manganese eventually attenuating the bulk Ga signal to the point where it is indistinguishable from the background. It is concluded that there the metal reacts with the semiconductor surface with some indiffusion as confirmed using SIMS. Previously, the reaction was only thought to have taken place above room temperature. The resulting structure consists of a Ga-As-Mn buffer layer as with the higher temperature depositions

Commensurate and incommensurate '5M' modulated crystal structures in Ni-Mn-Ga martensitic phases

International Nuclear Information System (INIS)

Righi, L.; Albertini, F.; Pareti, L.; Paoluzi, A.; Calestani, G.

2007-01-01

It is well known that the composition of ferromagnetic shape memory Ni-Mn-Ga Heusler alloys determines both temperature of martensitic transformations and the structure type of the product phase. In the present work we focused our attention on the structural study of the so-called '5M' modulated structure. In particular, the structure of Ni 1.95 Mn 1.19 Ga 0.86 martensitic phase is analysed by powder X-ray diffraction (PXRD) and compared with that of the stoichiometric Ni 2 MnGa martensite. The study of the diffraction data reveals the occurrence of commensurate (C) structural modulation in Ni 1.95 Mn 1.19 Ga 0.86 ; this contrasts with Ni 2 MnGa, where an incommensurate (IC) structural modulation was evident. The two phases also differ in the symmetry of the fundamental martensitic lattice. In fact, the incommensurate modulation is related to an orthorhombic basic structure, while the commensurate variant presents a monoclinic symmetry. The commensurate modulated structure has been investigated by using the superspace approach already adopted to solve the structure of Ni 2 MnGa martensite. The structure has been determined by Rietveld refinement of PXRD data

Suppression of antiferromagnetic interactions through Cu vacancies in Mn-substituted CuInSe2 chalcopyrites

International Nuclear Information System (INIS)

Yao Jinlei; Brunetta, Carl D; Aitken, Jennifer A

2012-01-01

Stoichiometric and Cu-poor Cu 0.95-x Mn 0.05 InSe 2 (x = 0-0.20) compounds were synthesized by high-temperature, solid-state reactions. The presence of copper vacancies is revealed by Rietveld refinements of combined neutron and x-ray powder diffraction data. The antiferromagnetic interaction is depressed by the copper deficiency, which may be explained as the competition between the antiferromagnetic Mn-Se-eMn superexchange interaction and the hole-mediated ferromagnetic exchange induced by the copper vacancy. The introduction of copper vacancies is proposed to be a viable route to impart carrier-mediated ferromagnetic exchange in the chalcopyrite-based dilute magnetic semiconductors. (paper)

Tuning the bimetallic amide-imide precursor system to make paramagnetic GaMnN nanopowders

Energy Technology Data Exchange (ETDEWEB)

Drygas, Mariusz [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Janik, Jerzy F., E-mail: janikj@agh.edu.pl [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Musial, Michal [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Gosk, Jacek [Warsaw University of Technology, Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland); Twardowski, Andrzej, E-mail: andrzej.twardowski@fuw.edu.pl [University of Warsaw, Faculty of Physics, Pasteura 5, 02-093 Warszawa (Poland)

2016-09-01

A bimetallic molecular system made of gallium (III) tris(dimethyl)amide Ga(NMe{sub 2}){sub 3} and manganese (II) bis(trimethylsilyl)amide Mn[N(SiMe{sub 3}){sub 2}]{sub 2} (Me = CH{sub 3}, fixed initial Mn-content 10 at.%) was subjected to ammonolysis in refluxing/liquid ammonia. Upon isolation at room temperature, the amide-imide mixed metal precursor was pyrolyzed at elevated temperatures under an ammonia flow by two different routes. Route 1 consisted of a direct nitridation at high temperatures of 500, 700 or 900 °C. In route 2, a low temperature pyrolysis at 150 °C was applied prior to nitridation at the same final temperatures as in route 1. All nanopowders were characterized by XRD diffraction, FT-IR spectroscopy, and SEM/EDX microscopy and analysis. Thorough magnetization measurements in function of magnetic field and temperature were carried out with a SQUID magnetometer. In all samples, the paramagnetic phase of GaMnN was accompanied by an antiferromagnetic by-product linked to a Mn-containing species from decomposition and oxidation of Mn-precursor excess. The Mn-contents in the crystalline GaMnN, i.e., Mn-incorporated in GaN crystal lattice, were of the order of 2–3 at.% mostly independent on the nitridation route whereas the latter had a pronounced effect on amounts of the antiferromagnetic by-product. - Highlights: • New bimetallic precursor system for conversion to GaN/Mn nanopowders was designed. • Two conversion routes were applied with precursor nitridation at 500, 700 or 900 °C. • Prepared nanopowders were thoroughly characterized including magnetic measurements. • The major product was the gallium nitride Mn-doped phase GaMnN with 2–3 at.% of Mn.

Formation and structure of nanocrystalline Al-Mn-Ni-Cu alloys

International Nuclear Information System (INIS)

Latuch, J.; Krasnowski, M.; Ciesielska, B.

2002-01-01

This paper reports the results of the short investigation on the effect of Cu additions upon the nanocrystallization behaviour of an Al-Mn-Ni alloy. 2 at.% Cu added to the base alloy of Al 85 Mn 10 Ni 5 alloy by substitution for Mn(mischmetal). The control of cooling rate did not cause the formation of nanocrystals of fcc-Al phase. The nanocrystalline structure fcc-Al + amorphous phase in quarternary alloy was obtained by isothermal annealing and continuous heating method, but the last technique is more effective. The volume fraction, lattice parameter, and size of Al-phase were calculated. (author)

Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Biber, M

2003-01-01

The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

Ferromagnetism and transport in Mn and Mg co-implanted GaAs

Energy Technology Data Exchange (ETDEWEB)

Kulbachinskii, V A [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Gurin, P V [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Danilov, Yu A [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Malysheva, E I [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Horikoshi, Y [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan); Onomitsu, K [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan)

2007-03-15

We investigated the influence of Mn and Mg co-implantation accompanied by rapid thermal annealing on magnetic and galvanomagnetic properties of p-GaAs. We characterized the samples with SQUID magnetometry and magnetotransport measurements in the temperature interval 4.2 KGa{sub 1-x}Mn{sub x}As solid solution on galvanomagnetic properties of holes. Above this temperature, ferromagnetism survives due to the MnAs and Ga{sub 1-x}Mn{sub x} clusters. The magnetoresistance changes from colossal negative to enhanced positive with increasing temperature near T = 35 K.

X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Martinez-Criado, G.; Salome, M.; Susini, J. [ESRF, Polygone Scientifique Louis Neel, 6 rue Jules Horowitz, 38000 Grenoble (France); Olguin, D. [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D.F. (Mexico); Dhar, S.; Ploog, K. [Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2006-06-15

We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga{sub 1-x}Mn{sub x}N (0.06Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after the edge, separated around 15 eV above the pre-edge structure. We have compared the position of the edge with that of MnO (Mn{sup 2+}) and Mn{sub 2}O{sub 3} (Mn{sup 3+}). All samples studied present the same Mn oxidation state, 2{sup +}. In order to interprete the near-edge structure, we have performed ab initio calculations with a 2 x 2 x 1supercell ({proportional_to}6% Mn) using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of Mn anti-bonding t{sub 2g} bands, which are responsible for the pre-edge absorption. The shoulder and main absorption peaks are due to transitions from the valence band 1s-states of Mn to the p-contributions of the conduction bands. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

International Nuclear Information System (INIS)

Yalishev, V.Sh.

2006-02-01

Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

2017-01-01

In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition

International Nuclear Information System (INIS)

Ajimsha, R.S.; Das, Amit K.; Joshi, M.P.; Kukreja, L.M.

2014-01-01

Highlights: • Band offset studies at the interface of Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures were performed using X-ray photoelectron spectroscopy. • Valance band offsets (VBO) of these hetero-structures were obtained from respective XPS peak positions and VB spectra using Kraut's equation. • Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. • Schematic band alignment diagram for the interface of these hetero-structures has been constructed. • Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. - Abstract: We have studied the band offset and alignment of pulsed laser deposited Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures using photoelectron spectroscopy. Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures

Low temperature formation of CuIn{sub 1−x}Ga{sub x}Se{sub 2} solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors

Energy Technology Data Exchange (ETDEWEB)

Möckel, Stefan A., E-mail: Stefan.A.Moeckel@FAU.de [Department of Materials Science, Chair of Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr, 7, 91058 Erlangen (Germany); Wernicke, Tobias; Arzig, Matthias; Köder, Philipp [Department of Materials Science, Chair of Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr, 7, 91058 Erlangen (Germany); Brandl, Marco [Chair for Crystallography and Structural Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 3, 91058 Erlangen (Germany); Ahmad, Rameez; Distaso, Monica; Peukert, Wolfgang [Institute of Particle Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Cauerstr. 4, 91058 Erlangen (Germany); Hock, Rainer [Chair for Crystallography and Structural Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 3, 91058 Erlangen (Germany); Wellmann, Peter J. [Department of Materials Science, Chair of Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr, 7, 91058 Erlangen (Germany)

2015-05-01

In this work an all nanoparticulate precursor for application in Cu(In{sub 1−x}Ga{sub x})Se{sub 2} solar cell absorbers is presented. Binary Cu-In nanoparticles, Cu-Ga powder and elemental Se nanoparticles were mixed in dispersion and deposited on Mo-coated substrates. Research was focused on Cu(In{sub 1−x}Ga{sub x})Se{sub 2} layer formation kinetics, phase composition characterised by differential scanning calorimetry and in-situ X-ray diffraction (XRD). Furthermore phase composition and morphology were studied by ex-situ XRD, Raman spectroscopy and scanning electron microscopy. The results revealed a fast consumption of the precursor and the formation of CuInSe{sub 2} below 340 °C. Binary secondary phases were not observed at any temperature. - Highlights: • All printable precursor for CIGSe • Formation of Ga droplets • Complete consumption below 340 °C.

Cobalt doped CuMnOx catalysts for the preferential oxidation of carbon monoxide

Science.gov (United States)

Dey, Subhashish; Dhal, Ganesh Chandra; Mohan, Devendra; Prasad, Ram; Gupta, Rajeev Nayan

2018-05-01

Carbon monoxide (CO) is a poisonous gas, recognized as a silent killer for the 21st century. It is produced from the partial oxidation of carbon containing compounds. The catalytic oxidation of CO receives a huge attention due to its applications in different fields. In the present work, hopcalite (CuMnOx) catalysts were synthesized using a co-precipitation method for CO oxidation purposes. Also, it was doped with the cobalt by varying concentration from 1 to 5wt%. It was observed that the addition of cobalt into the CuMnOx catalyst (by the deposition-precipitation method) improved the catalytic performance for the low-temperature CO oxidation. CuMnOx catalyst doped with 3wt% of cobalt exhibited most active performance and showed the highest activity than other cobalt concentrations. Different analytical tools (i.e. XRD, FTIR, BET, XPS and SEM-EDX) were used to characterize the as-synthesized catalysts. It was expected that the introduction of cobalt will introduce new active sites into the CuMnOx catalyst that are associated with the cobalt nano-particles. The order of calcination strategies based on the activity for cobalt doped CuMnOx catalysts was observed as: Reactive calcinations (RC) > flowing air > stagnant air. Therefore, RC (4.5% CO in air) route can be recommended for the synthesis of highly active catalysts. The catalytic activity of doped CuMnOx catalysts toward CO oxidation shows a correlation among average oxidation number of Mn and the position and the nature of the doped cobalt cation.

Preparation of catalysts based on Cu-Mn for combustion of n-hexane

International Nuclear Information System (INIS)

Picasso, Gino; Belleza, Freddy; Zavala, Cesar; Lopez, Alcides; Sun Kou, Rosario

2014-01-01

Catalysts based on Cu-Mn mixed oxides (with molar ratio Cu/Mn in the range of 0,33 to 3) have been prepared by sol-gel method of self-combustion for removal of n-hexane. Two combustion agents, citric acid and ethylenglycol, were applied to study their influence in the final catalyst. Additionally, simple oxides have been synthesized using the same procedure for comparison reasons. The catalysts were characterized by X-ray diffraction (XRD) and sorption of N_2 (BET method). All samples depicted surfaces, preferentially assigned to mesoporosity whose values ranged from 4 to 50 m"2/g. All XRD difractograms of mixed samples showed the presence of a good crystalinity indepently of composition, with the formation of spinel-hopcalite phase meanwhile Mn and Cu simple oxide showed peaks attributed to Mn_O_3, Mn_3O_4 and CuO, respectively. Curves of activity, measured as number of VOC molecules converted per hour and per gram of catalyst, considering the specific surface, showed that mixed oxides with more Mn content were the best, additionally, the sample prepared from citric acid was more active than the corresponding values to simple oxides, probably due to the better specific surface and the better spinel-hopcalite structure obtained. (author)

Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

Energy Technology Data Exchange (ETDEWEB)

Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

2008-07-01

The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

Time-dependent of characteristics of Cu/CuS/n-GaAs/In structure produced by SILAR method

Energy Technology Data Exchange (ETDEWEB)

Sağlam, M.; Güzeldir, B., E-mail: msaglam@atauni.edu.tr

2016-09-15

Highlights: • The CuS thin film used at Cu/n-GaAs structure is grown by SILAR method. • There has been no report on ageing of characteristics of this junction in the literature. • The properties of Cu/CuS/n-GaAs/In structure are examined with different methods. • It has been shown that Cu/CuS/n-GaAs/In structure has a stable interface. - Abstract: The aim of this study is to explain effects of the ageing on the electrical properties of Cu/n-GaAs Shottky barrier diode with Copper Sulphide (CuS) interfacial layer. CuS thin films are deposited on n-type GaAs substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The structural and the morphological properties of the films have been carried out by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) techniques. The XRD analysis of as-grown films showed the single-phase covellite, with hexagonal crystal structure built around two preferred orientations corresponding to (102) and (108) atomic planes. The ageing effects on the electrical properties of Cu/CuS/n-GaAs/In structure have been investigated. The current–voltage (I–V) measurements at room temperature have been carried out to study the change in electrical characteristics of the devices as a function of ageing time. The main electrical parameters, such as ideality factor (n), barrier height (Φ{sub b}), series resistance (R{sub s}), leakage current (I{sub 0}), and interface states (N{sub ss}) for this structure have been calculated. The results show that the main electrical parameters of device remained virtually unchanged.

Time-dependent of characteristics of Cu/CuS/n-GaAs/In structure produced by SILAR method

International Nuclear Information System (INIS)

Sağlam, M.; Güzeldir, B.

2016-01-01

Highlights: • The CuS thin film used at Cu/n-GaAs structure is grown by SILAR method. • There has been no report on ageing of characteristics of this junction in the literature. • The properties of Cu/CuS/n-GaAs/In structure are examined with different methods. • It has been shown that Cu/CuS/n-GaAs/In structure has a stable interface. - Abstract: The aim of this study is to explain effects of the ageing on the electrical properties of Cu/n-GaAs Shottky barrier diode with Copper Sulphide (CuS) interfacial layer. CuS thin films are deposited on n-type GaAs substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The structural and the morphological properties of the films have been carried out by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) techniques. The XRD analysis of as-grown films showed the single-phase covellite, with hexagonal crystal structure built around two preferred orientations corresponding to (102) and (108) atomic planes. The ageing effects on the electrical properties of Cu/CuS/n-GaAs/In structure have been investigated. The current–voltage (I–V) measurements at room temperature have been carried out to study the change in electrical characteristics of the devices as a function of ageing time. The main electrical parameters, such as ideality factor (n), barrier height (Φ_b), series resistance (R_s), leakage current (I_0), and interface states (N_s_s) for this structure have been calculated. The results show that the main electrical parameters of device remained virtually unchanged.

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

Science.gov (United States)

Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

2018-05-01

Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

Study of Cu-Al-Ni-Ga as high-temperature shape memory alloys

Science.gov (United States)

Zhang, Xin; Wang, Qian; Zhao, Xu; Wang, Fang; Liu, Qingsuo

2018-03-01

The effect of Ga element on the microstructure, mechanical properties and shape memory effect of Cu-13.0Al-4.0Ni- xGa (wt%) high-temperature shape memory alloy was investigated by optical microscopy, SEM, XRD and compression test. The microstructure observation results showed that the Cu-13.0Al-4.0Ni- xGa ( x = 0.5 and 1.0) alloys displayed dual-phase morphology which consisted of 18R martensite and (Al, Ga)Cu phase, and their grain size was about several hundred microns, smaller than that of Cu-13.0Al-4.0Ni alloy. The compression test results proved that the mechanical properties of Cu-13.0Al-4.0Ni- xGa alloys were improved by addition of Ga element owing to the grain refinement and solid solution strengthening, and the compressive fracture strains were 11.5% for x = 0.5 and 14.9% for x = 1.0, respectively. When the pre-strain was 8%, the shape memory effect of 4.2 and 4.6% were obtained for Cu-13.0Al-4.0Ni-0.5 Ga and Cu-13.0Al-4.0Ni-1.0 Ga alloys after being heated to 400 °C for 1 min.

Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

International Nuclear Information System (INIS)

Zhao, Qian; Xiong, Zhihua; Luo, Lan; Sun, Zhenhui; Qin, Zhenzhen; Chen, Lanli; Wu, Ning

2017-01-01

Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

Energy Technology Data Exchange (ETDEWEB)

Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

2017-02-28

Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

Mechanical and shape memory properties of ferromagnetic Ni2MnGa sputter-deposited films

Science.gov (United States)

Ohtsuka, M.; Matsumoto, M.; Itagaki, K.

2003-10-01

The ternary intermetallic compound Ni2MnGa is an intelligent material, which has a shape memory effect and a ferromagnetic property. Use of shape memory alloy films for an actuator of micro machines is very attractive because of its large recovery force. The data of mechanical and shape memory properties of the films are required to use for the actuator. The purpose of this study is to investigate the effects of fabrication conditions and to clarify the relationships between these properties and fabrication conditions of the Ni{2}MnGa films. The Ni{2}MnGa films were deposited with a radio-frequency magnetron sputtering apparatus using a Ni{50}Mn{25}Ga{25} or Ni{52}Mn{24}Ga{24} target. After deposition, the films were annealed at 873sim 1173 K. The asdeposited films were crystalline and had columnar grains. After the heat treatment, the grains widened and the grain boundary became indistinct with increasing heat treatment temperature. MnO and Ni{3} (Mn, Ga) precipitations were observed in the heat-treated films. The mechanical properties of the films were measured by the nanoindentation method. Hardness and elastic modulus of as-deposited films were larger than those of arcmelted bulk alloys. The hardness of the films was affected by the composition, crystal structure, microstructure and precipitation, etc. The elastic modulus of the films was also changed with the heat treatment conditions. The heat-treated films showed a thermal two-way shape memory effect.

Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

OpenAIRE

Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

2011-01-01

We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

Spin injection from Co2MnGa into an InGaAs quantum well

DEFF Research Database (Denmark)

Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.

2008-01-01

We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifet...

Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

International Nuclear Information System (INIS)

Steichen, M.; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

2011-01-01

CuGaSe 2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa 2 alloying during the electrodeposition and CuGaSe 2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe 2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

Qualitative analysis of As, Ba, Cd, Cr, Zn, Fe, Mn, K, Hg, Pb y Cu, as constituents of Amatitlan Lake sediment by XRF

International Nuclear Information System (INIS)

Beltran, P.A.E.; Morales, E.A.

1987-10-01

Samples of fifteen sampling points were analyzed. Molybdenum X-ray tube with secondary excitation assembly, SiLi detector and deconvolution software AXIL were employed; self-standardization method based upon incoherent ratio was used for quantitative analysis of some elements. Ca, P, S, Ti, Mn, Fe, Cr, Zn, Cu, Ni, Ga, As, Pb, Ge, Sr and Pb, were found. As, Pb and Cu concentrations lower than 109 mg/lt, 119 mg/lt, and 500mg/lt, respectively, were measured. Hg was not detected. (author)

Synthesis and magnetic properties of hexagonal Y(Mn,Cu)O{sub 3} multiferroic materials

Energy Technology Data Exchange (ETDEWEB)

Jeuvrey, L., E-mail: laurent.jeuvrey@univ-rennes1.fr [Sciences Chimiques de Rennes, UMR-CNRS 6226, Universite de Rennes 1, 35042 Rennes cedex (France); Pena, O. [Sciences Chimiques de Rennes, UMR-CNRS 6226, Universite de Rennes 1, 35042 Rennes cedex (France); Moure, A.; Moure, C. [Electroceramics Department, Instituto de Ceramica y Vidrio, CSIC, C/Kelsen 5, 28049, Madrid (Spain)

2012-03-15

Single-phase hexagonal-type solid solutions based on the multiferroic YMnO{sub 3} material were synthesized by a modified Pechini process. Copper doping at the B-site (YMn{sub 1-x}Cu{sub x}O{sub 3}; x<0.15) and self-doping at the A-site (Y{sub 1+y}MnO{sub 3}; y<0.10) successfully maintained the hexagonal structure. Self-doping was limited to y(Y)=2 at% and confirmed that excess yttrium avoids formation of ferromagnetic manganese oxide impurities but creates vacancies at the Mn site. Chemical substitution at the B-site inhibits the geometrical frustration of the Mn{sup 3+} two-dimensional lattice. The magnetic transition at T{sub N} decreases from 70 K down to 49 K, when x(Cu) goes from 0 to 15 at%. Weak ferromagnetic Mn{sup 3+}-Mn{sup 4+} interactions created by the substitution of Mn{sup 3+} by Cu{sup 2+}, are visible through the coercive field and spontaneous magnetization but do not modify the overall magnetic frustration. Presence of Mn{sup 3+}-Mn{sup 4+} pairs leads to an increase of the electrical conductivity due to thermally-activated small-polaron hopping mechanisms. Results show that local ferromagnetic interactions can coexist within the frustrated state in the hexagonal polar structure. - Highlights: Black-Right-Pointing-Pointer Hexagonal-type solid solutions of Y(Mn,Cu)O{sub 3} synthesized by Pechini process. Black-Right-Pointing-Pointer Chemical substitution at B site inhibits geometrical magnetic frustration. Black-Right-Pointing-Pointer Magnetic transition decreases with Cu-doping. Black-Right-Pointing-Pointer Local ferromagnetic Mn-Mn interactions coexist with the frustrated state.

Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

2013-11-01

Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

Magnetotransport of CaCu3Mn4O12 complex perovskite derivatives

International Nuclear Information System (INIS)

Sanchez-Benitez, J.; Andres, A. de; Garcia-Hernandez, M.; Alonso, J.A.; Martinez-Lope, M.J.

2006-01-01

Neutron powder diffraction, magnetic and magnetotransport studies were carried out on new derivatives of the CaCu 3 Mn 4 O 12 (A'A 3 B 4 O 12 ) complex perovskite. The samples were prepared in polycrystalline form under moderate pressure conditions. Substitutions at A and A' sites of CaCu 3 Mn 4 O 12 , with only Mn 4+ and insulating behavior, imply electron doping that affects the magnetic and transport properties. X-ray Absorption Spectroscopy showed that Mn 3+ /Mn 4+ valence mixing occurs only at B site, progressively filling the e g band and providing the metallic character in these compounds, as we observe in most of these samples. A semiconducting behavior is observed in samples with 50% Mn 3+ at B site. This can be understood by the opening of a gap in the conduction band corresponding to the half filling of the e g states. This is the case of the tetravalent rare earth doped samples (Ce and Th at A' site) and of the appropriate A site doped Ca(CuMn 2 )Mn 4 O 12 sample. At the strongly distorted A positions, Mn 3+ , with localized e g electrons, act as magnetic impurities at very low temperatures (<40 K) giving rise to the observed upturn in the resistivity. The magnetic origin of this scattering is evidenced by its drastic reduction under a magnetic field

Electronic configuration of the c(2 x 2)MnCu two-dimensional alloy in layered structures supported on Cu(100)

International Nuclear Information System (INIS)

Gallego, S; Munoz, M C; Huttel, Y; Avila, J; Asensio, M C

2003-01-01

The c(2 x 2)MnCu surface alloy on Cu(100) can be considered as a purely two-dimensional magnetic system where the Mn atoms exhibit a large corrugation closely related to their high spin moment. In this paper we investigate the influence of the atomic environment on the electronic and magnetic properties of the two-dimensional alloyed layer, extending our study to the less known multilayered system made of MnCu two-dimensional alloy layers embedded in a Cu crystal. The analysis is based on angle-resolved photoelectron spectroscopy measurements and calculations using the Green function matching method, which allows us to treat exactly the projection of the three-dimensional lattice on the c(2 x 2) plane. A complete study of the valence band is performed along the two-dimensional Brillouin zone in a wide energy range. We show that the presence of Mn results in an important redistribution of the spin-polarized electronic states of the neighbouring Cu atoms. This redistribution is not accompanied by a net charge transfer between different atoms, and also the spin moment of Cu remains small. Most of the new features induced by Mn in the surface alloy are also present in the multilayered system, evidencing that they are specific to the two-dimensional alloyed layer and not surface effects

Martensitic transformations in Ni-Mn-Ga system affected by external fields

International Nuclear Information System (INIS)

Chernenko, V.; Babii, O.; L'vov, V.; McCormick, P.G.

2000-01-01

The influence of hydrostatic pressure, uniaxial stress and magnetic field on the martensitic transformation temperatures for the ferromagnetic single crystalline Ni-Mn-Ga alloys is studied. It is shown that the experimental results are satisfactorily described by the Landau theory. Ni-Mn-Ga L2 1 -type ordered alloys exhibit a number of the first order and weak first order structural transformations in a ferromagnetic or paramagnetic parent phase depending on the alloy composition and being either thermally or stress activated. Most of these phase transformations are of the martensitic type, i.e., they are accompanied by the spontaneous elastic strains forming a multicomponent order parameter in the Landau expansion for the Gibbs potential. In this work we analyze the influence of the external fields (mechanical and magnetic) on the martensitic transformation (MT) from cubic parent phase (P) to five-layered martensitic one (5M-martensite) usually exhibited by the ferromagnetic ordered Ni-Mn-Ga alloys. In accordance with, we treat the 5M-martensite as a twinned tetragonal phase and, so, describe the experimental results in the framework of the theory of cubic-tetragonal MT. The original experimental data of high magnetic field influence on MT in near stoichiometric Ni 2 MnGa compound are presented to compare with the theoretical estimations. (orig.)

Paduan Ni-Cu-Mn Sebagai Logam Alternatif Kedokteran Gigi: Efek Perendaman dalam Larutan 0,1% Sodium Sulfida

Directory of Open Access Journals (Sweden)

Bambang Irawan

2015-09-01

Full Text Available In this study, the ternary base alloys of nickel-copper-manganese (Ni-Cu-Mn alloys are prepared and these ternary alloys systems, which were constituted from higher nickel and lower copper contents than copper-base alloy ones, were evaluated by a tarnish test. Tarnish tests conducted in a 0,1% sodium sulphide solution (pH=12 at 37◦C. All test specimens were case into square paddles of 15 mm x 20 mm x 2,5 mm using the lost-wax technique with a phosphate-bonded investment. The surface of the specimens were then prepared with abrasion papers down to a 600 grit finish. Tarnish attack was quantitatively evaluated by Fibre colorimetry. The results of tarnish test showed that ternary nickel-copper-manganese alloys, such as 40Ni-30Cu-30Mn and 50Ni-30Cu-20Mn, have superior tarnishment resistance than other alloys, e.g. 20Ni-40Cu-40Mn, 30Ni-30Cu-40Mn and 30Ni-40Cu-30Mn. It was also found that 40Ni-30Cu-30Mn and 50Ni-30Cu-20Mn alloys have lower values of colour change vector than the other alloys given above.

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

Science.gov (United States)

Glunk, M.; Daeubler, J.; Schoch, W.; Sauer, R.; Limmer, W.

2009-09-01

We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-conductivity to the high-conductivity regime. The anomalous Hall conductivity σxy(AH) is extracted from the measured longitudinal and Hall resistivities. A transition from σxy(AH)=20Ω-1cm-1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σxy(AH)∝σxx1.6 for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

Fundamental absorption edge in CuIn5Se8 and CuGa3Se5 single crystals

International Nuclear Information System (INIS)

Leon, M.; Merino, J.M.; Levcenko, S.; Nateprov, A.; Tezlevan, V.; Arushanov, E.; Syrbu, N.N.

2006-01-01

Optical absorption spectra of CuIn 5 Se 8 and CuGa 3 Se 5 single crystals have been investigated. The energy gap E g for CuIn 5 Se 8 (CuGa 3 Se 5 ) was found to be varied from 1.27(1.79) to 1.21(1.71) eV in the temperature range between 10 and 300 K. The temperature dependence of E g was studied by means of the Einstein model and the Paessler model. The Einstein temperature {222(267)K}, the Debye temperature {310(380)K}, a dimensionless constant related to the electron-phonon coupling {1.62(2.65)} as well as an effective energy {20 (24) meV} and a cut-off phonon energy {35(39) meV} have been estimated for CuIn 5 Se 8 (CuGa 3 Se 5 ). It was also found that the major contribution of phonons to the shift of E g versus temperature in CuIn 5 Se 8 (CuGa 3 Se 5 ) is mainly from optical phonons. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Cu deficiency in multi-stage co-evaporated Cu(In,Ga)Se{sub 2} for solar cells applications: Microstructure and Ga in-depth alloying

Energy Technology Data Exchange (ETDEWEB)

Caballero, R., E-mail: raquel.caballero@helmholtz-berlin.de [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Izquierdo-Roca, V. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain); Fontane, X. [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Kaufmann, C.A. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Alvarez-Garcia, J. [Centre de Recerca i Investigacio de Catalunya (CRIC), Trav. de Gracia 108, 08012 Barcelona (Spain); Eicke, A. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung, Industriestrasse 6, 70565 Stuttgart (Germany); Calvo-Barrio, L. [Lab. Analisis de Superficies, SCT, Universitat de Barcelona, Lluis Sole i Sabaris 1-3, 08028 Barcelona (Spain); Perez-Rodriguez, A. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Schock, H.W. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Morante, J.R. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain)

2010-05-15

The objective of this work is to study the influence of the maximum Cu content during the deposition of Cu(In,Ga)Se{sub 2} (CIGSe) by multi-stage co-evaporation on the phases present in the final film, the film structure and the electrical properties of resulting solar cell devices. The variation of the composition is controlled by the Cu content in stage 2 of the deposition process. The different phases are identified by Raman spectroscopy. The in-depth Ga gradient distribution is investigated by in-depth resolved Raman scattering and secondary neutral mass spectroscopy. The morphology of the devices is studied by scanning electron microscopy. Efficiencies of 9.2% are obtained for ordered-vacancy-compound-based cells with a Cu/(In + Ga) ratio = 0.35, showing the system's flexibility. This work supports the current growth model: a small amount of Cu excess during the absorber process is required to obtain a quality microstructure and high performance devices.

Magnetic properties of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yao, Jinlei [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009 (China); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

2015-12-15

Magnetic properties and magnetocaloric effect of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds have been investigated. Magnetic measurements of RNi{sub 3}TSi display the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Graphical abstract: Magnetic measurements of RNi{sub 3}TSi show the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of 'RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi'. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Highlights: • CaCu{sub 5}-type RNi{sub 3}TSi show ferromagnetic ordering (R=Gd, Tb, T=Mn–Co, Cu). • Curie point increases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • MCE decreases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. • The coercive field of TbNi{sub 3}MnSi and TbNi{sub 3}FeSi reach 13 kOe and 16 kOe at 5 K.

Microstructures and Properties Evolution of Al-Cu-Mn Alloy with Addition of Vanadium

Directory of Open Access Journals (Sweden)

Fansheng Meng

2016-12-01

Full Text Available The effect of the vanadium addition on the microstructure, the precipitation behavior, and the mechanical properties of the Al-5.0Cu-0.4Mn alloy has been studied. The as-cast Al-5.0Cu-0.4Mn alloy was produced by squeeze casting and the heat treatment was carried out following the standard T6 treatment. It is shown that, with the addition of V, grain refinement of aluminum occurred. During heat treatment, the addition of V accelerates the precipitation kinetics of θ′ (Al2Cu phase along the grain boundaries, and promotes the growth rate of the θ′ in the α(Al matrix. Meanwhile, the addition of V retards the precipitation of T (Al20Cu2Mn3 phase. The tensile strength of the Al-5.0Cu-0.4Mn alloy increases with the increase of V content, which can be explained by combined effects of the solid solution strengthening and precipitate strengthening. However, excessively high V addition deteriorates the mechanical properties by forming brittle coarse intermetallic phases.

Experimental determination of the Curie temperature for Ga(Mn)As

Czech Academy of Sciences Publication Activity Database

Vašek, Petr; Svoboda, Pavel; Novák, Vít; Výborný, Zdeněk; Jurka, Vlastimil; Smrčka, Ludvík

2011-01-01

Roč. 24, 1-2 (2011), s. 805-808 ISSN 1557-1939 R&D Projects: GA MŠk MEB020928; GA AV ČR KAN400100652 Institutional research plan: CEZ:AV0Z10100521 Keywords : Ga(Mn)As * Hall effect * magnetoresistance * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.650, year: 2011

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

International Nuclear Information System (INIS)

Rodriguez-Alvarez, H.; Mainz, R.; Sadewasser, S.

2014-01-01

We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se 2 thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se 2 surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of a double Ga gradient within the Cu(In,Ga)Se 2 layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.

Interdiffusion coefficients and atomic mobilities in fcc Cu-Fe-Mn alloys

Directory of Open Access Journals (Sweden)

Li J.

2014-01-01

Full Text Available In the present work, the interdiffusion coefficients in fcc Cu-Fe-Mn alloys were experimentally determined via a combination of solid/solid diffusion couples, electron probe microanalysis (EPMA technique and Matano-Kirkaldy method. Based on the reliable thermodynamic description of fcc phase in the Cu-Fe-Mn system available in the literature as well as the ternary diffusion coefficients measured in the present work, the atomic mobilities in fcc Cu-Fe-Mn alloys were assessed by utilizing the DICTRA (Diffusion Controlled TRAnsformation software package. The calculated interdiffusion coefficients based on the assessed atomic mobilities agree well with most of the experimental data. The comprehensive comparison between various model-predicted diffusion properties and the measured data, including the concentration penetration profiles, interdiffusion flux profile, and diffusion paths, further verify the reliability of the presently obtained atomic mobilities.

Spectro-photometric determinations of Mn, Fe and Cu in aluminum master alloys

Science.gov (United States)

Rehan; Naveed, A.; Shan, A.; Afzal, M.; Saleem, J.; Noshad, M. A.

2016-08-01

Highly reliable, fast and cost effective Spectro-photometric methods have been developed for the determination of Mn, Fe & Cu in aluminum master alloys, based on the development of calibration curves being prepared via laboratory standards. The calibration curves are designed so as to induce maximum sensitivity and minimum instrumental error (Mn 1mg/100ml-2mg/100ml, Fe 0.01mg/100ml-0.2mg/100ml and Cu 2mg/100ml-10mg/ 100ml). The developed Spectro-photometric methods produce accurate results while analyzing Mn, Fe and Cu in certified reference materials. Particularly, these methods are suitable for all types of Al-Mn, Al-Fe and Al-Cu master alloys (5%, 10%, 50% etc. master alloys).Moreover, the sampling practices suggested herein include a reasonable amount of analytical sample, which truly represent the whole lot of a particular master alloy. Successive dilution technique was utilized to meet the calibration curve range. Furthermore, the workout methods were also found suitable for the analysis of said elements in ordinary aluminum alloys. However, it was observed that Cush owed a considerable interference with Fe, the later one may not be accurately measured in the presence of Cu greater than 0.01 %.

Spin diffusion in bulk GaN measured with MnAs spin injector

KAUST Repository

Jahangir, Shafat; Dogan, Fatih; Kum, Hyun; Manchon, Aurelien; Bhattacharya, Pallab

2012-01-01

Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

Spin diffusion in bulk GaN measured with MnAs spin injector

KAUST Repository

Jahangir, Shafat

2012-07-16

Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

Effect of tellurium on machinability and mechanical property of CuAlMnZn shape memory alloy

International Nuclear Information System (INIS)

Liu Na; Li Zhou; Xu Genying; Feng Ze; Gong Shu; Zhu Lilong; Liang Shuquan

2011-01-01

Highlights: → A novel free-machining Cu-7.5Al-9.7Mn-3.4Zn-0.3Te (wt.%) shape memory alloy has been developed. → The size of dispersed particles with richer Te is 2-5 μm. → The CuAlMnZnTe alloy has good machinability which approached that of BZn15-24-1.5 due to the addition of Te. → Its shape memory property keeps the same as that of CuAlMnZn alloy with free Te. → The CuAlMnZn shape memory alloy with and without Te both have good ductile as annealed at 700 deg. C for 15 min. - Abstract: The microstructure transition, shape memory effect, machinability and mechanical property of the CuAlMnZn alloy with and without Te have been studied using X-ray diffraction analysis, chips observation and scanning electron microscopy (SEM), tensile strength test and differential scanning calorimeter (DSC), and semi-quantitative shape memory effect (SME) test. The particles with richer Te dispersedly distributed in grain interior and boundary with size of 2-5 μm. After the addition of Te, the CuAlMnZnTe alloy machinability has been effectively increased to approach that of BZn15-24-1.5 and its shape memory property remains the same as the one of CuAlMnZn alloy. The CuAlMnZn shape memory alloys with and without Te both have good ductility as annealed at 700 deg. C for 15 min.

Synthetic, structural, spectroscopic and theoretical study of a Mn(III)-Cu(II) dimer containing a Jahn-Teller compressed Mn ion

DEFF Research Database (Denmark)

Berg, Nelly; Hooper, Thomas N.; Liu, Junjie

2013-01-01

The heterobimetallic complex [Cu(II)Mn(III)(L)(2)(py)(4)](ClO(4))·EtOH (1) built using the pro-ligand 2,2'-biphenol (LH(2)), contains a rare example of a Jahn-Teller compressed Mn(III) centre. Dc magnetic susceptibility measurements on 1 reveal a strong antiferromagnetic exchange between the Cu...

Cumulation of Cu, Zn, Cd, and Mn in Plants of Gardno Lake

Directory of Open Access Journals (Sweden)

Trojanowski J.

2013-04-01

Full Text Available In the present paper there have been shown the results of research on yhe content of Zn, Cd, Cu, Mn and Pb in chosen plants of Lake Gardno.The biggest concentration of those metals has been observed in Potamogton natans and Elodea canadensis, on average Zn – 34.9, Pb -2.77, Cd – 0.62, Cu – 3.24 and Mn – 257.4 μg g-1. It has been found that the over-ground parts of the plants under analysis cumulate several times less of heavy metals than their roots. The determined enrichment factors enabled the researchers to state that Cu in the examined plants is of natural origin while Mn, Cd and Zn – of anthropogenic origin.

Mn3O4 precipitates in Ag and Cu studied with HRTEM : orientation relations and tetragonal twinning

NARCIS (Netherlands)

Kooi, B.J.; de Hosson, J.T.M.; Sarton, LAJ; Zeedijk, HB

1997-01-01

Internal oxidation of Ag-3at.%Mn resulted in Mn3O4 precipitates and of Cu-1at.%Mn gave rise to MnO and a minor amount of Mn3O4 precipitates. In Cu Mn3O4 transformed out of MnO, whereas in Ag Mn3O4 developed directly. Predominantly, precipitates with parallel topotaxy and an octahedron shape due to 8

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

OpenAIRE

Yuan, Ye; Xu, Chi; Hübner, René; Jakiela, Rafal; Böttger, Roman; Helm, Manfred; Sawicki, Maciej; Dietl, Tomasz; Zhou, Shengqiang

2017-01-01

Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strengt...

L-J phase in a Cu2.2Mn0.8Al alloy

Science.gov (United States)

Jeng, S. C.; Liu, T. F.

1995-06-01

A new type of precipitate (designated L-J phase) with two variants was observed within the (DO3 + L21) matrix in a Cu2.2Mn0.8Al alloy. Transmission electron microscopy examinations indicated that the L-J phase has an orthorhombic structure with lattice parameters a = 0.413 nm, b = 0.254 nm and c = 0.728 nm. The orientation relationship between the L-J phase and the matrix is (100)L-J//(011) m , (010)L-J//(111) m and (001)L-J//(211) m . The rotation axis and rotation angle between two variants of the L-J phase are [021] and 90 deg. The L-J phase has never been observed in various Cu-Al, Cu-Mn, and Cu-Al-Mn alloy systems before.

Thermoelastic martensite and shape memory effect in ductile Cu-Al-Mn alloys

Science.gov (United States)

Kainuma, R.; Takahashi, S.; Ishida, K.

1996-08-01

Ductile shape memory (SM) alloys of the Cu-AI-Mn system have been developed by controlling the degree of order in the β phase. Additions of Mn to the binary Cu-Al alloy stabilize the β phase and widen the single-phase region to lower temperature and lower Al contents. It is shown that Cu-Al-Mn alloys with low Al contents have either the disordered A2 structure or the ordered L21 structure with a lower degree of order and that they exhibit excellent ductility. The disordered A2 phase martensitically transforms to the disordered Al phase with a high density of twins. The martensite phase formed from the ordered L21 phase has the 18R structure. The SM effect accompanies both the A2 → Al and L21 → 18R martensitic transformations. These alloys exhibit 15 pct strain to failure, 60 to 90 pct rolling reduction without cracking, and 80 to 90 pct recovery from bend test in the martensitic condition. Experimental results on the microstructure, crystal structure, mechanical properties, and shape memory behavior in the ductile Cu-AI-Mn alloys are presented and discussed.

The structural, electronic and magnetic properties of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters

Energy Technology Data Exchange (ETDEWEB)

Gu, Gangxu [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Xiang, Gang, E-mail: gxiang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Luo, Jia; Tang, Zhijie [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Zhang, Xi, E-mail: xizhang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China)

2015-06-15

We systematically investigate the ground-state magnetic properties of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters (x=0, 2, 4, 6, and 8) within the framework of density functional theory (DFT) using a strategy that successively adopts the particle swarm optimization (CALYPSO) code and fixed spin-moment (FSM) method. The results show that for Ga{sub 8−x}Mn{sub x}As{sub 8} in the ground states or low-lying isomers, Mn atoms tend to assemble at the core of the clusters and the ferrimagnetic Mn–Mn couplings are identified for Ga{sub 8−x}Mn{sub x}As{sub 8} (x=4, 6, and 8), while Ga{sub 8}As{sub 8} and Ga{sub 6}Mn{sub 2}As{sub 8} are nonmagnetic. The possibility of multiple ground states of Ga{sub 8−x}Mn{sub x}As{sub 8} (x=4, 6, and 8) is also demonstrated. The binding energy and LUMO–HOMO gap analysis show that Ga{sub 8−x}Mn{sub x}As{sub 8} clusters with large x are more likely synthesized and exhibit stronger chemical reactivity. - Highlights: • The ground-state structural and magnetic configurations of Ga{sub 8-x}Mn{sub x}As{sub 8} clusters are predicted by using the particle swarm optimization (CALYPSO) code and fixed spin-moment method. • For the ground state and low-lying isomers of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters, Mn atoms are gathered at the core of cluster, and ferrimagnetic Mn–Mn coupling is found. • Ga{sub 8−x}Mn{sub x}As{sub 8} with large x is more likely formed and reacts with each other to create larger clusters.

Study of the Local Environment of Mn Ions Implanted in GaSb

International Nuclear Information System (INIS)

Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Barcz, A.; Hallen, A.; Arvanitis, D.

2010-01-01

The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation. (author)

Biological behaviour of some 67Ga and 64Cu chelates

International Nuclear Information System (INIS)

Leonovicova, T.; Angelis, B.; Cifka, J.; Cifkova, I.

1984-01-01

Chelates of 67 Ga and 64 Cu with iminodiacetic acid (IDA) and its two phenyl derivatives as well as with nitrilotriacetic acid (NTA) and benzylnitrilotriacetic acid (BNTA) were prepared. All the chelates were found to be negatively charged. A study of the biological distribution of these chelates in rats during time intervals of 3 to 180 min showed that the chelate of 67 Ga with IDA substituted at a phenyl by a hydrophobic substituent is excreted by the kidneys into the urine at a much higher rate than the IDA chelate of 67 Ga. The excretion of NTA and BNTA chelates of 67 Ga is the opposite. Blood clearance of 64 Cu chelates is more rapid than that of 67 Ga chelates. Chelates of 64 Cu accumulate in the liver and with the bile are slowly excreted into the intestines, urinary excretion is negligible. (author)

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Alvarez, H., E-mail: humberto.rodriguez@helmholtz-berlin.de [International Iberian Nanotechnology Laboratory, Avenida Mestre Jose Veiga s/n, 4715-330 Braga (Portugal); Helmholtz-Zentrum Berlin, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Mainz, R. [Helmholtz-Zentrum Berlin, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Sadewasser, S. [International Iberian Nanotechnology Laboratory, Avenida Mestre Jose Veiga s/n, 4715-330 Braga (Portugal)

2014-05-28

We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se{sub 2} thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se{sub 2} surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of a double Ga gradient within the Cu(In,Ga)Se{sub 2} layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.

Phase transformation and microstructure study of the as-cast Cu-rich Cu-Al-Mn ternary alloys

Directory of Open Access Journals (Sweden)

Holjevac-Grgurić T.

2017-01-01

Full Text Available Four Cu-rich alloys from the ternary Cu-Al-Mn system were prepared in the electric-arc furnace and casted in cylindrical moulds with dimensions: f=8 mm and length 12 mm. Microstructural investigations of the prepared samples were performed by using optical microscopy (OM and scanning electron microscopy, equipped by energy dispersive spectroscopy (SEM-EDS. Assignation of crystalline phases was confirmed by XRD analysis. Phase transition temperatures were determined using simultaneous thermal analyzer STA DSC/TG. Phase equilibria calculation of the ternary Cu-Al-Mn system was performed using optimized thermodynamic parameters from literature. Microstructure and phase transitions of the prepared as-cast alloys were investigated and experimental results were compared with the results of thermodynamic calculations.

Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

Science.gov (United States)

Sancho-Juan, O.; Martínez-Criado, O.; Cantarero, A.; Garro, N.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.; Ploog, K.

2011-05-01

In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03Mn and Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, MnGa, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

Giant magnetocaloric effect from reverse martensitic transformation in Ni–Mn–Ga–Cu ferromagnetic shape memory alloys

International Nuclear Information System (INIS)

Sarkar, Sudip Kumar; Sarita; Babu, P.D.; Biswas, Aniruddha; Siruguri, Vasudeva; Krishnan, Madangopal

2016-01-01

In an effort to produce Giant Magnetocaloric effect (GMCE) near room temperature, in a first ever such study, the austenite transformation temperature (A_s) was fine tuned to ferromagnetic Curie temperature (T_C) in Ferromagnetic Shape Memory Alloys (FSMA) and a large GMCE of ΔSM = −81.8 J/Kg-K was achieved in Ni_5_0Mn_1_8_._5Cu_6_._5Ga_2_5 alloy during reverse martensitic transformation (heating cycle) for a magnetic field change of 9 T at 303 K. Fine tuning of A_s with T_C was achieved by Cu substitution in Ni_5_0Mn_2_5_−_xCu_xGa_2_5 (0 ≤ x ≤ 7.0)-based FSMAs. Characterizations of these alloys were carried out using Optical and Scanning Electron Microscopy, X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC) and DC magnetization measurements. Addition of Cu to stoichiometric Heusler type Ni_2MnGa increases the martensitic transformation temperatures and decreases T_C. Concurrently, ΔSM increases with Cu addition and peaks at 6.5 at% Cu for which there is a virtual overlap between T_C and A_s. Maximum Refrigerant Capacity (RCP) of 327.0 J/Kg was also achieved in the heating cycle for 9 T field change at 303 K. Corresponding values for the cooling cycle measurements (measured during forward transformation) were 30.4 J/Kg-K and 123.5 J/Kg respectively for the same 6.5 at% Cu sample under the same thermo-magnetic conditions. - Highlights: • A_s was fine tuned to T_C in Cu substituted Ni_5_0Mn_2_5_−_xCu_xGa_2_5 (0 ≤ x ≤ 7.0) alloys. • MT temperature increases with Cu addition while T_C decreases. • A virtual overlapping of A_s with T_C was found in Ni_5_0Mn_1_8_._5Cu_6_._5Ga_2_5 alloys. • ΔSM = −81.8 J/Kg-K achieved from reverse MT for Δ(μ_0H) = 9 T at 303 K. • A highest RCP value of 94.6 J/Kg was observed for Δ(μ_0H) = 5 T in Cu:6.5 alloys.

Structural transformations in Mn2NiGa due to residual stress

International Nuclear Information System (INIS)

Singh, Sanjay; Maniraj, M.; D'Souza, S. W.; Barman, S. R.; Ranjan, R.

2010-01-01

Powder x-ray diffraction study of Mn 2 NiGa ferromagnetic shape memory alloy shows the existence of a 7M monoclinic modulated structure at room temperature (RT). The structure of Mn 2 NiGa is found to be highly dependent on residual stress. For higher stress, the structure is tetragonal at RT, and for intermediate stress it is 7M monoclinic. However, only when the stress is considerably relaxed, the structure is cubic, as is expected at RT since the martensitic transition temperature is 230 K.

Temperature dependence of elastic properties in austenite and martensite of Ni-Mn-Ga epitaxial films

Czech Academy of Sciences Publication Activity Database

Heczko, Oleg; Seiner, Hanuš; Stoklasová, Pavla; Sedlák, Petr; Sermeus, J.; Glorieux, C.; Backen, A.; Fähler, S.; Landa, Michal

2018-01-01

Roč. 145, Feb (2018), s. 298-305 ISSN 1359-6454 R&D Projects: GA ČR GA17-00062S Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic shape memory alloys * elastic properties * surface acoustic waves * Ni 2 MnGa * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Acoustics (UT-L) Impact factor: 5.301, year: 2016

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

2012-01-01

Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

International Nuclear Information System (INIS)

Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.

2006-01-01

Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide

Magnetotransport in (Ga,Mn)As on the verge of the single domain model

Energy Technology Data Exchange (ETDEWEB)

Rapp, Christoph; Dreher, Lukas; Daeubler, Joachim; Donhauser, Daniela; Glunk, Michael; Schoch, Wladimir; Schwaiger, Stephan; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

2009-07-01

We investigate the limits of the single-domain model in (Ga,Mn)As by performing detailed angle- and field-dependent magnetotransport measurements in samples with differing magnetic anisotropies. For this purpose, a series of (Ga,Mn)As layers with Mn concentrations of {proportional_to}5% was grown by low-temperature molecular-beam epitaxy on relaxed (In,Ga)As/GaAs templates with different In-concentrations, realizing different strain conditions from compressive to tensile. In past investigations we have elucidated the strain dependence of the magnetic anisotropy and of the anisotropic magnetoresistance employing a single-domain model. In order to analyze the break-down of the single-domain model, we now study in detail magnetization reversal processes by sweeping an external magnetic field along selected axes. The magnetic-field sweeps are compared with a series of angle-dependent magnetotransport measurements, carried out at weak external magnetic fields.

Optical and structural properties of Cu-doped β-Ga2O3 films

International Nuclear Information System (INIS)

Zhang Yijun; Yan Jinliang; Li Qingshan; Qu Chong; Zhang Liying; Xie Wanfeng

2011-01-01

Graphical abstract: Highlights: → We prepare polycrystalline Cu-doped β-Ga2O3 films. → Cu dopants cause poor crystal quality and shrinkage of the optical band gap. → Cu-doping enhances the UV and blue emission. → A new blue emission peak centre at 475 nm appears by Cu-doping. → Cu dopants decrease the optical transmittance. - Abstract: The intrinsic and Cu-doped β-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in an argon and oxygen mixture ambient. The effects of the Cu doping and the post thermal annealing on the optical and structural properties of the β-Ga 2 O 3 films were studied. The surface morphology, microstructure, optical transmittance, optical absorption, optical energy gap and photoluminescence of the β-Ga 2 O 3 films were significantly changed after Cu-doping. After post thermal annealing, Polycrystalline β-Ga 2 O 3 films were obtained, the transmittance decreased. After Cu-doping, the grain size decreased, the crystal quality deteriorated and the optical band gap shrunk. The UV, blue and green emission bands were observed and discussed. The UV and blue emission were enhanced and a new blue emission peak centred at 475 nm appeared by Cu-doping.

Thermal behaviour of Cu-Mg-Mn and Ni-Mg-Mn layered double hydroxides and characterization of formed oxides

Czech Academy of Sciences Publication Activity Database

Kovanda, F.; Grygar, Tomáš; Dorničák, V.; Rojka, T.; Bezdička, Petr; Jirátová, Květa

2005-01-01

Roč. 28, 1-4 (2005), s. 121-136 ISSN 0169-1317 Institutional research plan: CEZ:AV0Z40320502 Keywords : Cu-Mg-Mn basic carbonates * Ni-Mg-Mn hydrotalcite Subject RIV: CA - Inorganic Chemistry Impact factor: 1.324, year: 2005

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

Phase transformation, magnetic property and microstructure of Ni-Mn-Fe-Co-Ga ferromagnetic shape memory alloys

International Nuclear Information System (INIS)

Tsuchiya, K.; Sho, Y.; Kushima, T.; Todaka, Y.; Umemoto, M.

2007-01-01

Effects of addition of Fe and Co on the phase stability, magnetic property and microstructures were investigated for Ni-Mn-Ga. In Ni-Mn 21- x -Fe x -Ga 27 alloys, martensitic transformation temperatures decreased with increasing amount of Fe (x) up to 15 mol%, then slightly increased by the further addition. The crystal structure of martensite phase was 10 M for x 15 mol%. Relatively high martensite stability was obtained for Ni 52 -Mn 16- x -Fe x -Co 5 -Ga 27 alloys. The highest stability of the ferromagnetic martensite phase was achieved in Ni 52 -Mn 6 -Fe 10 -Co 5 -Ga 27 after aging at 773 K for 3.6 ks. Martensite structure was non-modulated 2 M in this series of alloys

Effect of CeLa addition on the microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy

International Nuclear Information System (INIS)

Du, Jiandi; Ding, Dongyan; Xu, Zhou; Zhang, Junchao; Zhang, Wenlong; Gao, Yongjin; Chen, Guozhen; Chen, Weigao; You, Xiaohua; Chen, Renzong; Huang, Yuanwei; Tang, Jinsong

2017-01-01

Development of high strength lithium battery shell alloy is highly desired for new energy automobile industry. The microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy with different CeLa additions were investigated through optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rietveld refinement and tensile testing. Experimental results indicate that Al 8 Cu 4 Ce and Al 6 Cu 6 La phases formed due to CeLa addition. Addition of 0.25 wt.% CeLa could promote the formation of denser precipitation of Al 20 Cu 2 Mn 3 and Al 6 (Mn, Fe) phases, which improved the mechanical properties of the alloy at room temperature. However, up to 0.50 wt.% CeLa addition could promote the formation of coarse Al 8 Cu 4 Ce phase, Al 6 Cu 6 La phase and Al 6 (Mn, Fe) phase, which resulted in weakened mechanical properties. - Highlights: •Al-Cu-Mn-Mg-Fe alloys with different CeLa addition were fabricated through casting and rolling. •Al 8 Cu 4 Ce and Al 6 Cu 6 La phases formed after CeLa addition. •Addition of 0.25 wt.% CeLa promoted formation of denser precipitates of Al 20 Cu 2 Mn 3 and Al 6 (Mn, Fe). •Mechanical properties of the alloy was improved after 0.25 wt.% CeLa addition.

Cu(InGa)Se{sub 2} absorber formation by in-situ, low-temperature annealing of co-evaporated bilayer (InGa){sub 2}Se{sub 3}/CuSe precursors

Energy Technology Data Exchange (ETDEWEB)

Moon, Kyeongchan; Kim, Woo Kyoung, E-mail: wkim@ynu.ac.kr

2015-12-01

Chalcopyrite Cu(InGa)Se{sub 2} (CIGS) absorbers were fabricated by the formation of bilayer stacked glass/Mo/(InGa){sub 2}Se{sub 3}/CuSe precursors followed by in-situ thermal annealing at 450 °C for approximately 10 min in a vacuum evaporator. The material properties (e.g., crystal orientation, compositional depth profile, and overall composition) and device performance of the resulting CIGS absorbers were compared with those of the CIGS absorbers formed by conventional 1-stage and 3-stage CIGS formation processes at a similar temperature. X-ray diffraction confirmed that the 1-stage co-evaporation and in-situ annealing of the bilayer precursor produced a polycrystalline CIGS absorber without a specific texture, whereas the CIGS absorber formed by the 3-stage process showed a highly (220) preferred orientation. Secondary ion mass spectrometry revealed Ga accumulation at the bottom of CIGS formed by in-situ annealing of the bilayer precursors. The cell efficiency of the device with the CIGS absorber formed by the in-situ, low-temperature (450 °C) annealing of bilayer stacked glass/Mo/(InGa){sub 2}Se{sub 3}/CuSe precursors was comparable to that produced by the conventional 3-stage process at a similar temperature. - Highlights: • Annealing of (InGa){sub 2}Se{sub 3}/CuSe precursors was compared with coevaporation process. • In-situ annealing of (InGa){sub 2}Se{sub 3}/CuSe precursors at 450 °C produced about 9% solar cell. • Ga profile within Cu(InGa)Se{sub 2} depended on process profile during co-evaporation.

Synthesis of Cu(In,Ga)Se{sub 2} crystals using a crank ball mill

Energy Technology Data Exchange (ETDEWEB)

Yamada, Suzuka; Noji, Hideki; Akaki, Yoji [Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo Miyazaki 885-8567 (Japan); Okamoto, Tomoichiro [Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)

2015-06-15

Cu(In,Ga)Se{sub 2} (CIGS) crystals were synthesized by a mechanochemical (MC) process using a crank ball mill. The molar ratios of starting materials were Cu:In:Ga:Se=1:1-x:x:2 (0≤x≤1) and Cu:In:Ga:Se=1:0.7:0.3:y (2≤y≤3). The reaction time reduced with decreasing Se and Ga molar ratios. The collection rate decreased with longer reaction times. From XRD patterns, we confirmed that the CuInSe{sub 2} and/or CuGaSe{sub 2}crystals were successfully grown when the powders reacted. Although the crystals grown with a selenium molar ration of 2 were Se-poor, those grown at a molar ratio of 3 were Se-rich. When Se increasing molar ratio, Cu, In, and Ga were away from the stoichiometric. With a molar ratio of Cu:In:Ga:Se=1:0.7:0.3:2.5∝2.7, their composition became stoichiometric. Crystal morphology was varied. CIGS crystals were thus successfully synthesized using a crank ball mill. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical orientation of Mn{sup 2+} ions in GaAs

Energy Technology Data Exchange (ETDEWEB)

Langer, Lukas; Bayer, Manfred [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Akimov, Ilya A.; Yakovlev, Dmitri R. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Dzhioev, Roslan I.; Korenev, Vladimir L.; Kusrayev, Yuri G.; Sapega, Victor F. [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2011-07-01

We report on optical orientation of Mn{sup 2+} ions in bulk GaAs under application of weak longitudinal magnetic fields (B {<=}150 mT). The studied samples were grown by liquid phase epitaxy and Czochralski method and were doped with a low Mn acceptor concentration of 8 x 10{sup 18} cm{sup -3}. Time resolved measurements of circular polarization for donor-acceptor photoluminescence in Faraday geometry reveal nontrivial spin dynamics of donor localized electrons. Initially the degree of polarization of the electron spins is 40%. It then decays within some tens of ns to reach a plateau. The plateau is absent at B=0 T and saturates at B=150 mT reaching the value of 35%. It's sign changes with the helicity of incident light. It follows that the s-d exchange interaction with optically oriented electrons induces a steady state non-equilibrium polarization of the Mn{sup 2+} ions. The latter maintain their spin and return part of the polarization back to the electron spin system, resulting in the plateau. This provides a long-lived electron spin memory in GaAs doped with Mn. The dynamical polarization of ionized Mn acceptors was also directly monitored using spin flip Raman scattering spectroscopy, in agreement with time-resolved data.

Investigation of thermal, mechanical and magnetic behaviors of the Cu-11%Al alloy with Ag and Mn additions

International Nuclear Information System (INIS)

Silva, R.A.G.; Paganotti, A.; Gama, S.; Adorno, A.T.; Carvalho, T.M.; Santos, C.M.A.

2013-01-01

The investigation of thermal, mechanical and magnetic behaviors of the Cu-11%Al, Cu-11%Al-3%Ag, Cu-11%Al-10%Mn and Cu-11%Al-10%Mn-3%Ag alloys was made using microhardness measurements, differential scanning calorimetry, X-ray diffractometry, scanning electron microscopy, energy dispersion X-ray spectroscopy and magnetic moment change with applied field measurement. The results indicated that the Mn addition changes the phase stability range, the microhardness values and makes undetectable the eutectoid reaction in annealed Cu-11%Al and Cu-11%Al-3%Ag alloys while the presence of Ag does not modify the phase transformation sequence neither microhardness values of the annealed Cu-11%Al and Cu-11%Al-10%Mn alloys, but it increases the magnetic moment of this latter at about 2.7 times and decreases the rates of eutectoid and peritectoid reactions of the former. - Highlights: ► The microstructure of Cu-Al alloy is modified in the Ag presence. ► (α + γ) phase is stabilized down to room temperature when Ag is added to Cu-Al alloy. ► Ag-rich phase modifies the magnetic characteristics of Cu–Al–Mn alloy.

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

Science.gov (United States)

Glunk, M.; Daeubler, J.; Dreher, L.; Schwaiger, S.; Schoch, W.; Sauer, R.; Limmer, W.; Brandlmaier, A.; Goennenwein, S. T. B.; Bihler, C.; Brandt, M. S.

2009-05-01

We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of (Ga,Mn)As layers with 5% Mn on relaxed graded (In,Ga)As/GaAs templates with different In concentration. The hole density, the Curie temperature, and the relaxed lattice constant of the as-grown and annealed (Ga,Mn)As layers turned out to be essentially unaffected by the strain. Angle-dependent magnetotransport measurements performed at different magnetic-field strengths were used to probe the magnetic anisotropy. The measurements reveal a pronounced linear dependence of the uniaxial out-of-plane anisotropy on both strain and hole density. Whereas the uniaxial and cubic in-plane anisotropies are nearly constant, the cubic out-of-plane anisotropy changes sign when the magnetic easy axis flips from in-plane to out-of-plane. The experimental results for the magnetic anisotropy are quantitatively compared with calculations of the free energy based on a mean-field Zener model. Almost perfect agreement between experiment and theory is found for the uniaxial out-of-plane and cubic in-plane anisotropy parameters of the as-grown samples. In addition, magnetostriction constants are derived from the anisotropy data.

Deposition of Mn-Cu-Ni-enriched sediments during glacial period in the Central Indian Basin

Digital Repository Service at National Institute of Oceanography (India)

Borole, D.V.

Two siliceous sediment cores collected from the Central Indian Basin have been analysed for organic carbon, biogenic silica, Al, Mn, Ni and Cu content. The concentrations of Mn, Cu and Ni showed one order of magnitude variation (an enrichment by a...

Effect of CeLa addition on the microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy

Energy Technology Data Exchange (ETDEWEB)

Du, Jiandi [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Ding, Dongyan, E-mail: dyding@sjtu.edu.cn [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Xu, Zhou; Zhang, Junchao; Zhang, Wenlong [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Gao, Yongjin; Chen, Guozhen; Chen, Weigao; You, Xiaohua [Huafon NLM Al Co., Ltd, Shanghai 201506 (China); Chen, Renzong; Huang, Yuanwei; Tang, Jinsong [Shanghai Huafon Materials Technology Institute, Shanghai 201203 (China)

2017-01-15

Development of high strength lithium battery shell alloy is highly desired for new energy automobile industry. The microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy with different CeLa additions were investigated through optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rietveld refinement and tensile testing. Experimental results indicate that Al{sub 8}Cu{sub 4}Ce and Al{sub 6}Cu{sub 6}La phases formed due to CeLa addition. Addition of 0.25 wt.% CeLa could promote the formation of denser precipitation of Al{sub 20}Cu{sub 2}Mn{sub 3} and Al{sub 6}(Mn, Fe) phases, which improved the mechanical properties of the alloy at room temperature. However, up to 0.50 wt.% CeLa addition could promote the formation of coarse Al{sub 8}Cu{sub 4}Ce phase, Al{sub 6}Cu{sub 6}La phase and Al{sub 6}(Mn, Fe) phase, which resulted in weakened mechanical properties. - Highlights: •Al-Cu-Mn-Mg-Fe alloys with different CeLa addition were fabricated through casting and rolling. •Al{sub 8}Cu{sub 4}Ce and Al{sub 6}Cu{sub 6}La phases formed after CeLa addition. •Addition of 0.25 wt.% CeLa promoted formation of denser precipitates of Al{sub 20}Cu{sub 2}Mn{sub 3} and Al{sub 6}(Mn, Fe). •Mechanical properties of the alloy was improved after 0.25 wt.% CeLa addition.

Fourier transform imaging of impurities in the unit cells of crystals: Mn in GaAs

Science.gov (United States)

Lee, T.-L.; Bihler, C.; Schoch, W.; Limmer, W.; Daeubler, J.; Thieß, S.; Brandt, M. S.; Zegenhagen, J.

2010-06-01

The lattice sites of Mn in ferromagnetic (Ga,Mn)As thin films were imaged using the x-ray standing wave technique. The model-free images, obtained straightforwardly by Fourier inversion, disclose immediately that the Mn mostly substitutes the Ga with a small fraction residing on minority sites. The images further reveal variations in the Mn concentrations of the different sites upon post-growth treatments. Subsequent model refinement based on the directly reconstructed images resolves with high precision the complete Mn site distributions. It is found that post-growth annealing increases the fraction of substitutional Mn at the expense of interstitial Mn whereas hydrogenation has little influence on the Mn site distribution. Our study offers an element-specific high-resolution imaging approach for accurately determining the detailed site distributions of dilute concentrations of atoms in crystals.

Thermodynamic properties of Al-Mn, Al-Cu, and Al-Fe-Cu melts and their relations to liquid and quasicrystal structure

International Nuclear Information System (INIS)

Zaitsev, A I; Zaitseva, N E; Shimko, R Yu; Arutyunyan, N A; Dunaev, S F; Kraposhin, V S; Lam, Ha Thanh

2008-01-01

Thermodynamic properties of molten Al-Mn, Al-Cu and Al-Fe-Cu alloys in a wide temperature range of 1123-1878 K and the whole range of concentrations have been studied using the integral effusion method and Knudsen mass spectrometry. Thermodynamic functions of melts were described by the associated solution model. The possibility of icosahedral quasicrystal (i-QC) precipitation from liquid Al-Mn and Al-Cu-Fe alloys was found to be a consequence of the existence in liquid associates (clusters). A geometric model is suggested for the structure of associates in liquid

Effects on Magnetic Properties of GaMnAs Induced by Proximity of Topological Insulator Bi2Se3

Science.gov (United States)

Bac, Seul-Ki; Lee, Hakjoon; Lee, Sangyeop; Choi, Seonghoon; Lee, Sanghoon; Liu, X.; Dobrowolska, M.; Furdyna, J. K.

2018-04-01

Effects induced by a topological insulator Bi2Se3 on the magnetic properties of an adjacent GaMnAs film have been investigated using transport measurements. We observed three conspicuous effects in the GaMnAs layer induced by the proximity of the Bi2Se3 overlayer. First, our resistivity data as a function of temperature show that the GaMnAs layer adjacent to the Bi2Se3 displayed strongly metallic behavior, as compared with the GaMnAs control specimen. Second, the Curie temperature of the GaMnAs in the bilayer was observed to be higher than that of the control layer, in our case by nearly a factor of two. Finally, we observed significant changes in the in-plane magnetic anisotropy of the GaMnAs in the bilayer, in the form of much higher values of both cubic and uniaxial anisotropy parameters. This latter feature manifests itself in a rather spectacular increase of the coercive field observed in magnetization reversal across the in-plane hard axis. These results suggest that proximity of an adjacent Bi2Se3 layer represents an important tool for modifying and controlling the ferromagnetic properties of GaMnAs film, and could thus be used to optimize this and similar materials for applications in spintronic devices.

Electronic structure, defect formation energy, and photovoltaic properties of wurtzite-derived CuGaO2

Science.gov (United States)

Okumura, H.; Sato, K.; Kakeshita, T.

2018-04-01

Wurtzite-derived CuGaO2 (β-CuGaO2) is a recently synthesized oxide and expected as a candidate material for photovoltaic solar cells. In this paper, we propose computational material design concerning β-CuGaO2 based on the first-principles calculations. We perform hybrid calculations by using the VASP code. It is predicted that β-CuGaO2 has a direct bandgap (Eg = 1.56 eV), which is nearly optimal for high efficiency solar cells. The calculated formation energy of Cu vacancy (VCu) is very small and can be negative depending on the Fermi level. This result reasonably explains the observed p-type conduction in this material. As for the n-type doping, Cd doping could be suitable; however, VCu formation needs to be repressed in order to realize n-type β-CuGaO2. It is also shown that halogen impurities are not suitable for n-type β-CuGaO2 because of their large formation energy. Band alignment between β-CuGaO2 and ZnO is predicted to be type-II, leading to a suggestion of photovoltaic device based on the heterojunction.

Local structure analysis of Cu(In,Ga)Se{sub 2} by X-ray fluorescence holography

Energy Technology Data Exchange (ETDEWEB)

Shirakata, Sho; Kitamura, Yuma [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Happo, Naohisa [Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194 (Japan); Hosokawa, Shinya [Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan); Hayashi, Kouichi [Faculty of Engineering, Nagoya Institute of technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555 (Japan)

2017-06-15

X-ray Fluorescence Holography (XFH) study of Cu(In,Ga)Se{sub 2} single crystals has been performed using an inverse mode. Energies of incident X-ray are from 9.2 to 13.2 keV. The Cu-Kα X-ray fluorescence hologram has been constructed, and atomic images were reconstructed using Barton's algorithm. Dependence of fluorescent X-ray, either Cu or Ga, on the reconstructed atomic images of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was examined. The atomic image of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was compared with that of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2}. The reconstructed atomic images of the cation (Cu, Ga, and In) plane and that of the anion (Se) plane are discussed in terms of the alloy composition. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis, structure, magnetic, electrical and electrochemical properties of Al, Cu and Mg doped MnO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Hashem, Ahmed M., E-mail: ahmedh242@yahoo.com [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Abuzeid, Hanaa M. [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Narayanan, N. [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Ehrenberg, Helmut [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, D-64287 Darmstadt (Germany); Julien, C.M. [Universite Pierre et Marie Curie, Physicochimie des Electrolytes, Colloides et Sciences Analytiques (PECSA), 4 place Jussieu, 75005 Paris (France)

2011-10-17

Highlights: {yields} Al, Mg and Cu doped MnO{sub 2} as cathode in Li-ion batteries. {yields} Pure phase MnO{sub 2} for virgin and doped MnO{sub 2} were obtained. {yields} Doping elements improve the electrical conductivity of MnO{sub 2}. {yields} Electrochemical behaviour of MnO{sub 2} improved after doping by Al, Mg and Cu. - Abstract: Pure and doped manganese dioxides were prepared by wet-chemical method using fumaric acid and potassium permanganate as raw materials. X-ray diffraction patterns show that pure and Al, Cu and Mg doped manganese dioxides (d-MnO{sub 2}) crystallized in the cryptomelane-MnO{sub 2} structure. Thermal analysis show that, with the assistance of potassium ions inside the 2 x 2 tunnel, the presence of Al, Cu and Mg doping elements increases the thermal stability of d-MnO{sub 2}. The electrical conductivity of d-MnO{sub 2} increases in comparison with pure MnO{sub 2}, while Al-doped MnO{sub 2} exhibits the lower resistivity. As shown in the magnetic measurements, the value of the experimental effective magnetic moment of Mn ions decreases with introduction of dopants, which is attributed to the presence of a mixed valency of high-spin state Mn{sup 4+}/Mn{sup 3+}. Doped MnO{sub 2} materials show good capacity retention in comparison with virgin MnO{sub 2}. Al-doped MnO{sub 2} shows the best electrochemical results in terms of capacity retention and recharge efficiency.

The geochemical profile of Mn, Co, Cu and Fe in Kerteh Mangrove Forest, Terengganu

International Nuclear Information System (INIS)

Kamaruzzaman, B.Y.; Antotina, A.; Airiza, Z.; Syalindran, S.; Ong, M.C.

2007-01-01

The geochemical profile of Kerteh mangrove sediments was analyzed for the vertical and horizontal distribution. The 100 cm core sediment sample and 15 surface sediments samples were taken from the field. The geochemical elements of Mn, Co, Cu and Fe of the sediments were analyzed. Geochemical proxy of Mn, Co, Cu and Fe were analyzed by using Inductively Coupled Plasma-Mass Spectrometry (ICP-MS). The mean concentrations of Mn, Co, Cu and Fe for the vertical distribution were 210.18 μg/ g, 15.55 μg/ g, 43.65 μg/ g and 1.88 μg/ g respectively. on the other hand, the mean concentrations of the geochemical elements for horizontal distributions were 230.50 μg/ g for Mn, 17.57 μg/ g for Co, 43.381 μg/ g for Cu and 2.93 μg/ g for Fe. Enrichment factor and normalization was used to point out the level of pollution. The EF and the normalization indicated that all the geochemical elements were from the natural sources. (author)

Giant magnetocaloric effect from reverse martensitic transformation in Ni–Mn–Ga–Cu ferromagnetic shape memory alloys

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Sudip Kumar, E-mail: sudips@barc.gov.in [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India); Sarita [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India); Babu, P.D. [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, Mumbai, 400085 (India); Biswas, Aniruddha [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India); Siruguri, Vasudeva [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, Mumbai, 400085 (India); Krishnan, Madangopal [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India)

2016-06-15

In an effort to produce Giant Magnetocaloric effect (GMCE) near room temperature, in a first ever such study, the austenite transformation temperature (A{sub s}) was fine tuned to ferromagnetic Curie temperature (T{sub C}) in Ferromagnetic Shape Memory Alloys (FSMA) and a large GMCE of ΔSM = −81.8 J/Kg-K was achieved in Ni{sub 50}Mn{sub 18.5}Cu{sub 6.5}Ga{sub 25} alloy during reverse martensitic transformation (heating cycle) for a magnetic field change of 9 T at 303 K. Fine tuning of A{sub s} with T{sub C} was achieved by Cu substitution in Ni{sub 50}Mn{sub 25−x}Cu{sub x}Ga{sub 25} (0 ≤ x ≤ 7.0)-based FSMAs. Characterizations of these alloys were carried out using Optical and Scanning Electron Microscopy, X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC) and DC magnetization measurements. Addition of Cu to stoichiometric Heusler type Ni{sub 2}MnGa increases the martensitic transformation temperatures and decreases T{sub C}. Concurrently, ΔSM increases with Cu addition and peaks at 6.5 at% Cu for which there is a virtual overlap between T{sub C} and A{sub s}. Maximum Refrigerant Capacity (RCP) of 327.0 J/Kg was also achieved in the heating cycle for 9 T field change at 303 K. Corresponding values for the cooling cycle measurements (measured during forward transformation) were 30.4 J/Kg-K and 123.5 J/Kg respectively for the same 6.5 at% Cu sample under the same thermo-magnetic conditions. - Highlights: • A{sub s} was fine tuned to T{sub C} in Cu substituted Ni{sub 50}Mn{sub 25−x}Cu{sub x}Ga{sub 25} (0 ≤ x ≤ 7.0) alloys. • MT temperature increases with Cu addition while T{sub C} decreases. • A virtual overlapping of A{sub s} with T{sub C} was found in Ni{sub 50}Mn{sub 18.5}Cu{sub 6.5}Ga{sub 25} alloys. • ΔSM = −81.8 J/Kg-K achieved from reverse MT for Δ(μ{sub 0}H) = 9 T at 303 K. • A highest RCP value of 94.6 J/Kg was observed for Δ(μ{sub 0}H) = 5 T in Cu:6.5 alloys.

Anisotropic magnetoresistance components in (Ga,Mn)As.

Science.gov (United States)

Rushforth, A W; Výborný, K; King, C S; Edmonds, K W; Campion, R P; Foxon, C T; Wunderlich, J; Irvine, A C; Vasek, P; Novák, V; Olejník, K; Sinova, Jairo; Jungwirth, T; Gallagher, B L

2007-10-05

We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

Suppression of Electron Spin Relaxation in Mn-Doped GaAs

Science.gov (United States)

Astakhov, G. V.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Lazarev, M. V.; Tkachuk, M. N.; Kusrayev, Yu. G.; Kiessling, T.; Ossau, W.; Molenkamp, L. W.

2008-08-01

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

Ferromagnetic transition temperature enhancement in (Ga, Mn)As semiconductors by carbon codoping

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Mašek, Jan; Sinova, J.; MacDonald, A. H.

2003-01-01

Roč. 68, č. 16 (2003), s. 161202-1 - 161202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA AV ČR IAA1010214 Institutional research plan: CEZ:AV0Z1010914 Keywords : (Ga, Mn)(As, C) semiconductors * tight-binding coherent-potential approximation * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Tuning the magnetic interactions in GaAs:Mn/MnAs hybrid structures by controlling shape and position of MnAs nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Elm, Matthias Thomas

2010-07-01

In this work the magnetic properties of hexagonal MnAs nanoclusters and their influence on the transport properties of GaAs:Mn /MnAs hybrid structures were studied. Various arrangements of isolated nanoclusters and cluster chains were grown on (111)B-GaAs substrates by SA-MOVPE. The first part of this work deals with the manufacturing process of the different cluster arrangements investigated. By a suitable pre-structuring of the substrate it was possible to influence the cluster size, cluster shape and cluster position systematically. Preparing various arrangements it could be shown that the hexagonal nanoclusters prefer to grow along their a-axes. In the second part, the magnetic properties of the nanoclusters were studied. Ferromagnetic resonance (FMR) measurements show a hard magnetic axis perpendicular to the sample plane, i.e. parallel to the c-axis. By measurements, where the magnetic field was rotated in the sample plane, it could be demonstrated that the orientation of the magnetization can be forced into a certain direction by controlling the cluster shape. These results are confirmed by measurements using magnetic force microscopy. The third part deals with the influence of the nanoclusters and their arrangement on the transport properties of the GaAs:Mn matrix. For temperatures above 30 K the structures investigated show positive as well as negative magnetoresistance effects, which are typical for granular GaAs:Mn/MnAs hybrid structures. This behaviour can be explained in the context of transport in extended band states. The size of the magnetoresistance effects correlates strongly with the respective cluster arrangement of the sample. This behaviour has been predicted theoretically and could be confirmed experimentally in the context of this work. Below 30 K large positive magnetoresistance effects show up for the regular cluster arrangements, which cannot be observed for hybrid structures with random cluster distributions. These large positive

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

CERN Document Server

Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

2012-01-01

We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

Energy Technology Data Exchange (ETDEWEB)

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Phenomenological approach to the spin glass state of (Cu-Mn, Ag-Mn, Au-Mn and Au-Fe) alloys at low temperatures

International Nuclear Information System (INIS)

Al-Jalali, Muhammad A.; Kayali, Fawaz A.

2000-01-01

Full text.The spin glass of: (Cu-Mn, Ag-Mn, Au-Mn, Au-Fe) alloys has been extensively studied. The availability of published and assured experimental data on the susceptibility x(T) of this alloys has enabled the design and application of phenomenological approach to the spin glass state of these interesting alloys. The use of and advanced (S.P.S.S) computer software has resulted revealing some important features of the spin glass in these alloys, the most important of which is that the spin glass state do not represent as phase change

The synthetic evaluation of CuO-MnOx-modified pinecone biochar for simultaneous removal formaldehyde and elemental mercury from simulated flue gas.

Science.gov (United States)

Yi, Yaoyao; Li, Caiting; Zhao, Lingkui; Du, Xueyu; Gao, Lei; Chen, Jiaqiang; Zhai, Yunbo; Zeng, Guangming

2018-02-01

A series of low-cost Cu-Mn-mixed oxides supported on biochar (CuMn/HBC) synthesized by an impregnation method were applied to study the simultaneous removal of formaldehyde (HCHO) and elemental mercury (Hg 0 ) at 100-300° C from simulated flue gas. The metal loading value, Cu/Mn molar ratio, flue gas components, reaction mechanism, and interrelationship between HCHO removal and Hg 0 removal were also investigated. Results suggested that 12%CuMn/HBC showed the highest removal efficiency of HCHO and Hg 0 at 175° C corresponding to 89%and 83%, respectively. The addition of NO and SO 2 exhibited inhibitive influence on HCHO removal. For the removal of Hg 0 , NO showed slightly positive influence and SO 2 had an inhibitive effect. Meanwhile, O 2 had positive impact on the removal of HCHO and Hg 0 . The samples were characterized by SEM, XRD, BET, XPS, ICP-AES, FTIR, and H 2 -TPR. The sample characterization illustrated that CuMn/HBC possessed the high pore volume and specific surface area. The chemisorbed oxygen (O β ) and the lattice oxygen (O α ) which took part in the removal reaction largely existed in CuMn/HBC. What is more, MnO 2 and CuO (or Cu 2 O) were highly dispersed on the CuMn/HBC surface. The strong synergistic effect between Cu-Mn mixed oxides was critical to the removal reaction of HCHO and Hg 0 via the redox equilibrium of Mn 4+ + Cu + ↔ Mn 3+ + Cu 2+ .

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Del Río-De Santiago, A.; Méndez-García, V.H. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Martínez-Velis, I.; Casallas-Moreno, Y.L. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); López-Luna, E. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Yu Gorbatchev, A. [IICO-UASLP, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P. 78210, México (Mexico); López-López, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); Cruz-Hernández, E., E-mail: esteban.cruz@uaslp.mx [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico)

2015-04-01

Highlights: • The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is found the formation of nanogrooves, nanoleaves, and nanowires. • It is shown the progressive photoluminescence transitions from purely GaAsMn zinc blende (for Mn% = 0.01) to a mixture of zinc blende and wurtzite GaAsMn (for Mn% = 0.2). • A critical thickness for the Mn catalyst effect was determined by RHEED. - Abstract: In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples is strongly influenced and changes from planar to corrugated for Mn% values from 0.01 to 0.05, corresponding to nanostructures on the surface with dimensions of 200–300 nm and with the shape of leave, to nanowire-like structures for Mn% values above 0.05. From reflection high-energy electron diffraction patterns, we observed the growth mode transition from two- to three-dimensional occurring at a Mn% exceeding 0.05. The optical and electrical properties were obtained from photoluminescence (PL) and Hall effect measurements, respectively. For the higher Mn concentration, besides the Mn related transitions at approximately 1.41 eV, PL spectra sharp peaks are present between 1.43 and 1.49 eV, which we related to the coexistence of zinc blende and wurtzite phases in the nanowire-like structures of this sample. At Mn% of 0.04, an increase of the carrier mobility up to a value of 1.1 × 10{sup 3} cm{sup 2}/Vs at 77 K was found, then decreases as Mn% is further increased due to the strengthening of the ionized impurity scattering.

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Directory of Open Access Journals (Sweden)

Manjari Garg

2016-01-01

Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

Branched needle microstructure in Ni-Mn-Ga 10M martensite: EBSD study

Czech Academy of Sciences Publication Activity Database

Chulist, R.; Straka, Ladislav; Sozinov, A.; Tokarski, T.; Skrotzki, W.

2017-01-01

Roč. 128, Apr (2017), s. 113-119 ISSN 1359-6454 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : EBSD * NiMnGa * seudoelasticity * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 5.301, year: 2016

Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar; Sharif, Rehana; Husnain, G

2009-01-01

Mn ions were implanted into GaN thin films with six doses ranging from 10 14 to 5 x 10 16 cm -2 and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M s and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Sharif, Rehana [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Husnain, G, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 (China)

2009-07-07

Mn ions were implanted into GaN thin films with six doses ranging from 10{sup 14} to 5 x 10{sup 16} cm{sup -2} and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M{sub s} and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

Immunoreactive Cu-SOD and Mn-SOD in lymphocytes sub-populations from normal and trisomy 21 subjects according to age

International Nuclear Information System (INIS)

Baeteman, M.A.; Baret, A.; Courtiere, A.; Rebuffel, P.; Mattei, J.F.

1983-01-01

Copper and manganese superoxide dismutases (Cu-SOD and Mn-SOD) were measured by radioimmunoassay in B and T lymphocytes and macrophages, in patients with trisomy 21 and in matched controls. In the controls, Cu-SOD was present in greater amounts than Mn-SOD and there were quantitative differences in the distribution in the three cellular sub-populations. In trisomy 21, levels of Cu-SOD were raised, with no change in levels of Mn-SOD, supporting the theory of a gene dosage effect. There were significant positive and negative correlations between age and Cu-SOD levels in controls, and a correlation approaching significance for Mn-SOD. In trisomy 21, there was no correlation between age and Cu-SOD levels, and the only significant correlation for Mn-SOD was for B lymphocytes

Defect chemistry in CuGaS2 thin films: A photoluminescence study

International Nuclear Information System (INIS)

Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

2007-01-01

In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

Defect luminescence and lattice strain in Mn{sup 2+} doped ZnGa{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Somasundaram, K.; Abhilash, K.P. [Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi, 642001 Coimbatore (India); Sudarsan, V., E-mail: vsudar@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Christopher Selvin, P., E-mail: pcsphyngmc@rediffmail.com [Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi, 642001 Coimbatore (India); Kadam, R.M. [Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-06-15

Undoped and Mn{sup 2+} doped ZnGa{sub 2}O{sub 4} phosphors were prepared by solution combustion method and characterized by XRD, SEM, luminescence and electron paramagnetic resonance (EPR) techniques. Based on XRD results, it is inferred that, strain in ZnGa{sub 2}O{sub 4} host lattice increases with incorporation of Mn{sup 2+} ions in the lattice. Mn{sup 2+} doping at concentration levels investigated, lead to significant reduction in the defect emission and this has been attributed to the formation of higher oxidation states of Mn ions in the lattice. Electron Paramagnetic Resonance studies confirmed that majority of Mn ions exist as Mn{sup 2+} species and they occupy tetrahedral Zn{sup 2+} site in ZnGa{sub 2}O{sub 4} lattice with an average hyperfine coupling constant, A{sub iso}∼82 G.

Back surface studies of Cu(In,Ga)Se2 thin film solar cells

Science.gov (United States)

Simchi, Hamed

Cu(In,Ga)Se2 thin film solar cells have attracted a lot of interest because they have shown the highest achieved efficiency (21%) among thin film photovoltaic materials, long-term stability, and straightforward optical bandgap engineering by changing relative amounts of present elements in the alloy. Still, there are several opportunities to further improve the performance of the Cu(In,Ga)Se2 devices. The interfaces between layers significantly affect the device performance, and knowledge of their chemical and electronic structures is essential in identifying performance limiting factors. The main goal of this research is to understand the characteristics of the Cu(In,Ga)Se2-back contact interface in order to design ohmic back contacts for Cu(In,Ga)Se2-based solar cells with a range of band gaps and device configurations. The focus is on developing either an opaque or transparent ohmic back contact via surface modification or introduction of buffer layers in the back surface. In this project, candidate back contact materials have been identified based on modeling of band alignments and surface chemical properties of the absorber layer and back contact. For the first time, MoO3 and WO 3 transparent back contacts were successfully developed for Cu(In,Ga)Se 2 solar cells. The structural, optical, and surface properties of MoO 3 and WO3 were optimized by controlling the oxygen partial pressure during reactive sputtering and post-deposition annealing. Valence band edge energies were also obtained by analysis of the XPS spectra and used to characterize the interface band offsets. As a result, it became possible to illuminate of the device from the back, resulting in a recently developed "backwall superstrate" device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices in the absorber thickness range 0.1-0.5 microm. Further enhancements were achieved by introducing moderate amounts of Ag into the Cu(In,Ga)Se2 lattice during the co-evaporation method

Synthesis of hard magnetic Mn3Ga micro-islands by e-beam evaporation

Science.gov (United States)

Akdogan, O.

2018-05-01

The permanent magnet industry heavily depends on Nd-Fe-B and Sm-Co alloys because of their high-energy product and high room temperature coercivity. Main ingredient for having such superior magnetic properties compared to other known ferromagnetic materials is rare earth elements (Nd, Sm, Dy…). However recent worldwide reserve and export limitation problem of rare earths, shifted researchers' focus to rare earth free permanent magnets. Among many alternatives (FePt, Zr2Co11, FeNi …), Mn-based alloys are the most suitable due to abundance of the forming elements and trivial formation of the necessary hard phases. In this study, Mn3Ga micro islands have been prepared. Mn3Ga owes its hard magnetic properties to tetragonal D022 phase with magnetic anisotropy energy of 2 MJ/m3. Thin films and islands of Cr/MnGa/Cr layers have been deposited on Si/SiO2 wafers using combination of e-beam and thermal evaporation techniques. Cr has been used as buffer and cover layer to protect the sample from the substrate and prevent oxidation during annealing. Annealing under Ar/H2 forming gas has been performed at 350oC for 10 min. Nano thick islands of 25, 50 and 100 μm lateral size have been produced by photolithography technique. Room temperature coercivity of 7.5 kOe has been achieved on 100 μm micro islands of Mn3Ga. Produced micro islands could be a rare earth free alternative for magnetic memory and MEMS applications.

Synthesis of hard magnetic Mn3Ga micro-islands by e-beam evaporation

Directory of Open Access Journals (Sweden)

O. Akdogan

2018-05-01

Full Text Available The permanent magnet industry heavily depends on Nd-Fe-B and Sm-Co alloys because of their high-energy product and high room temperature coercivity. Main ingredient for having such superior magnetic properties compared to other known ferromagnetic materials is rare earth elements (Nd, Sm, Dy…. However recent worldwide reserve and export limitation problem of rare earths, shifted researchers’ focus to rare earth free permanent magnets. Among many alternatives (FePt, Zr2Co11, FeNi …, Mn-based alloys are the most suitable due to abundance of the forming elements and trivial formation of the necessary hard phases. In this study, Mn3Ga micro islands have been prepared. Mn3Ga owes its hard magnetic properties to tetragonal D022 phase with magnetic anisotropy energy of 2 MJ/m3. Thin films and islands of Cr/MnGa/Cr layers have been deposited on Si/SiO2 wafers using combination of e-beam and thermal evaporation techniques. Cr has been used as buffer and cover layer to protect the sample from the substrate and prevent oxidation during annealing. Annealing under Ar/H2 forming gas has been performed at 350oC for 10 min. Nano thick islands of 25, 50 and 100 μm lateral size have been produced by photolithography technique. Room temperature coercivity of 7.5 kOe has been achieved on 100 μm micro islands of Mn3Ga. Produced micro islands could be a rare earth free alternative for magnetic memory and MEMS applications.

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

CERN Document Server

Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

2011-01-01

We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

Teores de Fe, Mn, Zn, Cu, Ni E Co em solos de referência de Pernambuco Concentrations of Fe, Mn, Zn, Cu, Ni and Co in benchmark soils of Pernambuco, Brazil

Directory of Open Access Journals (Sweden)

Caroline Miranda Biondi

2011-06-01

Full Text Available Metais pesados formam um grupo de elementos com particularidades relevantes e de ocorrência natural no ambiente, como elementos acessórios na constituição de rochas. Esses elementos, apesar de associados à toxidez, exigem tratamento diferenciado em relação aos xenobióticos, uma vez que diversos metais possuem essencialidade (Fe, Mn, Cu, Zn e Ni e benefício (Co comprovados para as plantas. Nesse contexto, o objetivo deste trabalho foi determinar os teores naturais dos metais Fe, Mn, Zn, Ni, Cu e Co nos solos de referência de Pernambuco. Foram coletadas amostras de solo nas três regiões fisiográficas (Zona da Mata, Agreste e Sertão, dos dois primeiros horizontes dos 35 solos de referência do Estado de Pernambuco. A digestão das amostras baseou-se no método 3051A (USEPA, 1998, e a determinação foi efetuada em ICP-OES. Correlações significativas foram estabelecidas entre os metais e entre estes e a fração argila do solo, em ambos os horizontes, indicando a associação comum da maioria dos metais com solos mais argilosos. A maioria dos solos apresentou teores de Fe, Mn, Zn, Cu, Ni e Co menores que os de solos de outras regiões do País, com litologia mais máfica, o que corrobora o fato de que os teores desses elementos são mais diretamente relacionados aos minerais Fe-magnesianos. Os resultados indicam baixo potencial dos solos de Pernambuco em liberar Cu, Co e Ni para plantas, enquanto deficiências de Zn, Fe e Mn são menos prováveis. Os teores naturais de Fe, Mn, Zn, Cu, Ni e Co determinados podem ser utilizados como base para definição dos Valores de Referência de Qualidade para os solos de Pernambuco, de acordo com o preconizado pela legislação nacional.Heavy metals are a group of elements with specific features and natural occurrence in the environment, representing an accessory in the formation of rocks. These elements, although associated with toxicity, must be treated different from xenobiotics, since many

Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

International Nuclear Information System (INIS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2013-01-01

The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

TL and OSL properties of Mn2+-doped MgGa2O4 phosphor

Science.gov (United States)

Luchechko, A.; Zhydachevskyy, Ya; Maraba, D.; Bulur, E.; Ubizskii, S.; Kravets, O.

2018-04-01

The oxide MgGa2O4 spinel ceramics doped with Mn2+ ions was synthesized by a solid-state reaction at 1200 °C in air. The activator concentration was equal 0.05 mol% of MnO. Phase purity of the synthesized samples was analyzed by X-ray diffraction technique. This spinel ceramics show efficient green emission in the range from 470 to 550 nm with a maximum at about 505 nm under UV or X-ray excitations, which is due to Mn2+ ions. MgGa2O4: Mn2+ exhibits intense thermoluminescence (TL) and optically stimulated luminescence (OSL) after influence of ionizing radiation. Are complex nature of the TL glow curves is associated with a significant number of structural defects that are responsible for the formation of shallow and deep electron traps. In this work, time-resolved OSL characteristics of the samples exposed to beta particles are reported for the first time. A light from green LED was used for optical stimulation. Obtained TL and OSL results suggest MgGa2O4:Mn2+ as perspective material for further research and possible application in radiation dosimetry.

Tunable band gap in epitaxial ferroelectric Ho(Mn,Ga)O{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Lee, Daesu; Noh, Tae Won, E-mail: twnoh@snu.ac.kr [Center for Correlated Electron Systems, Institute for Basic Science, Seoul 151-742 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2016-05-09

Ferroelectrics have recently attracted attention as a new class of materials for use in optical and photovoltaic devices. We studied the electronic properties in epitaxially stabilized ferroelectric hexagonal Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} (x = 0, 0.33, 0.67, and 1) thin films. Our films exhibited systematic changes in electronic structures, such as bandgap and optical transitions, according to the Ga concentration. In particular, the bandgap increased systematically from 1.4 to 3.2 eV, including the visible light region, with increasing Ga concentration from x = 0 to 1. These systematic changes, attributed to lattice parameter variations in epitaxial Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} films, should prove useful for the design of optoelectronic devices based on ferroelectrics.

Real time observation of phase formations by XRD during Ga-rich or In-rich Cu(In, Ga)Se{sub 2} growth by co-evaporation

Energy Technology Data Exchange (ETDEWEB)

Pistor, Paul; Zahedi-Azad, Setareh; Hartnauer, Stefan; Waegele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland [Institute of Physics, Martin-Luther-University Halle-Wittenberg, Halle (Saale) (Germany)

2015-09-15

Solar cells with Cu(In, Ga)Se{sub 2} absorbers rely on the three-stage co-evaporation process with Cu-poor/Cu-rich/Cu-poor absorber deposition conditions for highest efficiency devices. During the three-stage process, the formation and evolution of different selenide phases with changing compositions throughout the process crucially determine the final absorber quality. In this contribution, we monitor the evolution of crystalline phases in real-time with an X-ray diffraction (XRD) line detector setup implemented into an evaporation setup. Using the common three-stage process, we prepare and compare samples covering the full alloying range from CuInSe{sub 2} to CuGaSe{sub 2}. The in situ XRD allows the detection of the crystalline phases present at all times of the process as well as an advanced analysis of the phase evolution through a closer look at peak shifts and the full width at half maximum. For samples with a Ga/(Ga + In) ratio (GGI) < 0.5, distinct phase transitions associated with the transition to the reported vacancy compounds Cu(In,Ga){sub 5}Se{sub 8} and Cu(In, Ga){sub 3}Se{sub 5} are observed. No such indication was found for samples with a GGI > 0.5. For Ga-rich Cu(In, Ga)Se{sub 2} phases with a GGI of 0.55, the XRD analysis evidenced a Ga-rich phase segregation before the stoichiometric point was reached. The above findings are discussed in view of their implication on wide gap solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

Science.gov (United States)

Sharma, Venus; Srivastava, Sunita

2018-04-01

Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

Electronic structures and relevant physical properties of Ni2MnGa alloy films

International Nuclear Information System (INIS)

Kim, K. W.; Kim, J. B.; Huang, M. D.; Lee, N. N.; Lee, Y. P.; Kudryavtsev, Y. V.; Rhee, J. Y.

2004-01-01

The electronic structures and physical properties of the ordered and disordered Ni 2 MnGa alloy films were investigated in this study. Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K. It was also revealed that the film deposition onto substrates cooled by liquid nitrogen leads to the formation of a substantially-disordered or an amorphous phase which is not ferromagnetically ordered at room temperature. An annealing of such an amorphous film restores its crystallinity and also recovers the ferromagnetic order. It was also clarified how the structural disordering in the films influences the physical properties, including the loss of ferromagnetism in the disordered films, by performing electronic-structure calculations and a photoemission study.

Ab initio electronic structure calculations for Mn linear chains deposited on CuN/Cu(001) surfaces

International Nuclear Information System (INIS)

Barral, Maria Andrea; Weht, Ruben; Lozano, Gustavo; Maria Llois, Ana

2007-01-01

In a recent experiment, scanning tunneling microscopy has been used to obtain a direct probe of the magnetic interaction in linear manganese chains arranged by atomic manipulation on thin insulating copper nitride islands grown on Cu(001). The local spin excitation spectra of these chains have been measured with inelastic electron tunneling spectroscopy. Analyzing the spectroscopic results with a Heisenberg Hamiltonian the interatomic coupling strength within the chains has been obtained. It has been found that the coupling strength depends on the deposition sites of the Mn atoms on the islands. In this contribution, we perform ab initio calculations for different arrangements of infinite Mn chains on CuN in order to understand the influence of the environment on the value of the magnetic interactions

Gd3+-ESR and magnetic susceptibility of GdCu4Al8 and GdMn4Al8

International Nuclear Information System (INIS)

Coldea, R.; Coldea, M.; Pop, I.

1994-01-01

Gd ESR of GdCu 4 Al 8 and GdMn 4 Al 8 and magnetic susceptibility of GdCu 4 Al 8 , GdMn 4 Al 8 , and YMn 4 Al 8 were measured in the temperature range of 290K--460K and 90K--1050K, respectively. The occurrence of the Mn moment in YMn 4 Al 8 and GdMn 4 Al 8 is strongly correlated with the critical value of d∼2.6 angstrom of the Mn-Mn distance below which the Mn moment is not stable. The experimental data for GdMn 4 Al 8 , compared with the data for the isostructural compounds GdCu 4 Al 8 and YMn 4 Al 8 , show that near the critical value of d, the existence of Mn moment depends not only on the value of d, but also on the local magnetic surroundings. It has been revealed that the magnetic character of Mn moment in YMn 4 Al 8 and GdMn 4 Al 8 changes from an itinerant electron type to a local-moment type with increasing temperature

Structural, optical, dielectric and magnetic studies of gadolinium-added Mn-Cu nanoferrites

Science.gov (United States)

Kanna, R. Rajesh; Lenin, N.; Sakthipandi, K.; Kumar, A. Senthil

2018-05-01

Spinel ferrite with the general formula Mn1-xCuxFe1.85Gd0.15O4 (x = 0.2, 0.4, 0.6 and 0.8) was synthesized using the standard sonochemical method. The structure, optical, morphology, dielectric and magnetic properties of the prepared Mn1-xCuxFe1.85Gd0.15O4 nanoferrites were exhaustively investigated using various characterization techniques. The phase purity, secondary phase and crystallite parameters were studied from X-ray diffraction patterns. Fourier transform infrared spectra showed two absorption bands of transition metal oxides in the frequency range from 400 to 650 cm-1, which are related to asymmetric stretching modes of the spinel ferrites (AB2O4). Raman spectra have five active modes illustrating the vibration of O2- ions at both tetrahedral (A) site and octahedral (B) site ions. The wide and narrow scan spectrum from X-ray photoelectron spectroscopy results confirmed the presence of Mn, Cu, Gd, Fe, C and O elements in the composition. The oxidation state and core level of the photo electron peaks of Mn 2p, Cu 2p, Gd 3d, Fe 2p and O 1s were analyzed. The influence of the Cu2+ concentration in Mn1-xCuxFe1.85Gd0.15O4 on the morphology, varying from nanorods, nanoflakes to spherical, was explored on the basis of scanning electron microscopy images. Ultraviolet diffuse reflectance spectroscopy studies indicated that the optical bandgap (5.12-5.32 eV) of the nanoferrites showed an insulating behavior. The dielectric constant, loss tangent and complex dielectric constant values decreased with an increase in frequency with the addition of Gd3+ content. A vibrating sample magnetometer showed that the prepared nanoferrites had a soft ferromagnetic nature. The magnetic parameter changed markedly with an increase in the Cu content in Mn1-xCuxFe1.85Gd0.15O4 nanoferrites. The optical, dielectric and magnetic properties were considerably enhanced with the addition of Gd3+ ions in the spinel nanoferrites.

Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

CERN Document Server

Pearton, S J; Thaler, G; Abernathy, C R; Theodoropoulou, N; Hebard, A F; Chu, S N G; Wilson, R G; Zavada, J M; Polyakov, A Y; Osinsky, A V; Norris, P E; Chow, P P; Wowchack, A M; Hove, J M V; Park, Y D

2002-01-01

The magnetization of p-GaN or p-AlGaN/GaN superlattices was measured after implantation with high doses (3-5x10 sup 1 sup 6 cm sup - sup 2) of Mn, Fe, or Ni and subsequent annealing at 700-1000 deg. C. The samples showed ferromagnetic contributions below temperatures ranging from 190-250 K for Mn to 45-185 K for Ni and 80-250 K for Fe. The use of superlattices to enhance the hole concentration did not produce any change in ferromagnetic ordering temperature. No secondary phase formation was observed by x-ray diffraction, transmission electron microscopy, or selected area diffraction pattern analysis for the doses we employed.

Microstructure and corrosion resistance of Sm-containing Al-Mn-Si-Fe-Cu alloy

Directory of Open Access Journals (Sweden)

Han Yuyin

2017-12-01

Full Text Available Optimizing alloy composition is an effective way to improve physical and chemical properties of automobile heat exchanger materials.A Sm-containing Al-Mn-Si-Fe-Cu alloy was investigated through transmission electron microscopy,scanning electron microscopy,and electrochemical measurement.Experimental results indicated that main phases distributed in the alloy wereα-Al(Mn,FeSi,Al2Sm and Al10Cu7Sm2.Alloying with Sm element could refine the precipitated α-Al(Mn,FeSi phase.Polarization testing results indicated that the corrosion surfacewas mainly composed of pitting pits and corrosion products.Sea water acetic acid test(SWAAT showed that corrosion loss increased first and then slowed downwith increase of the corrosion time.

Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

International Nuclear Information System (INIS)

Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

2006-01-01

Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Selective production of oxygenates from CO2 hydrogenation over mesoporous silica supported Cu-Ga nanocomposite catalyst

KAUST Repository

Huang, Kuo-Wei

2017-11-23

Carbon dioxide hydrogenation to oxygenates (methanol and dimethyl ether (DME)) was investigated over bifunctional supported copper catalysts promoted with gallium (Ga). Supported Cu-Ga nanocomposite catalysts were characterized by X-ray diffraction, transmission electron microscopy with energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and H2 temperature programmed reduction. In comparison with Cu-SBA-15 based catalysts, Ga promoted catalysts prepared by the urea deposition method (CuGa/SBA-15-UDP) was found active and selective for CO2 hydrogenation to oxygenates. The use of Ga as the promoter showed increased acidic sites as confirmed by the NH3-TPD, Pyridine-IR and 2,6-lutidine-IR studies. The favorable effect of Ga on CO2 conversion and selectivity to oxygenate may come from the strong interaction of Ga with silica, which is responsible for the enhanced metal surface area, formation of nanocomposite and metal dispersion. Notably, incorporation of Ga to Cu/SiO2 showed a several-fold higher rate for methanol formation (13.12 mol/gCu·sec) with a reasonable rate for the DME formation (2.15 mol/gCu·sec) as compared to those of Cu/SiO2 catalysts.

Phase formation and reaction kinetics during the processing of the chalkopyrite-solar-cell-material Cu(In,Ga)(Se,S){sub 2}; Phasenbildung und Reaktionskinetik bei der Herstellung des Chalkopyrit-Solarzellenmaterials Cu(In,Ga)(Se,S){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Purwins, Michael

2010-02-05

The SEL/RTP-procedure (Stacked-Elemental-Layer/Rapid-Thermal-Process) is a method which is used to produce CuInSe{sub 2}-based absorbers/semiconductors for the application in thin film solar cells and modules, respectively. The SEL/RTP-procedure consists of two consecutive steps. During the first step a stack of several layers of the metals Cu, Ga and In as well as Se and/or S are deposited onto a substrate to form the so called precursor. By annealing the precursor, reaching temperatures of about 550 C, the stacked layers are converted into the compound semiconductor Cu(In{sub 1-x}Ga{sub x})(S{sub 1-y}Se{sub y}){sub 2} (CIGSSe). During the thermal process the central component of the later solar cell, the highly light absorbing, photoelectric active layer is formed. Thus, the second step is of great importance. This is not only because of the fact that the absorbers physical properties are established by the thermal process. Additionally the profitability of the whole manufacturing process is affected. To be able to optimize the SEL/RTP-procedure a deep and comprehensive understanding of the occurring phase formation processes and reaction kinetic mechanisms associated with them is necessary. This was the goal of the present thesis which therefore deals with the phase formation processes during the deposition of the precursor and its reaction kinetics during the following selenization and sulfurization process. Therefore the influence of different sputtering parameters on the formation of phases and the evolution of the precursor's morphology during its production by sputtering alternating stacked layers of Cu:Ga-alloys (i.e. Cu{sub 85}Ga{sub 15}, Cu{sub 75}Ga{sub 25} and CuGa{sub 2}) and/or the elements Cu and In was investigated. It was found that the deposition of Cu{sub 75/85}Ga{sub 25/15} onto In leads to the formation of CuIn{sub 2} and/or a metastable Cu(In,Ga)-alloy that is rich in copper. This deposition sequence is crucial for the precursor

Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

DEFF Research Database (Denmark)

Kovács, A.; Sadowski, J.; Kasama, Takeshi

2013-01-01

The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate...... in annealed GaMnAs layers doped with low Mn concentrations is proposed....

Luminescence investigation of Cu(In,Ga)Se{sub 2}solar cells with different Ga-contents grown in a three-stage-process on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Wendt, Kristin; Mueller, Mathias; Hempel, Thomas; Bertram, Frank; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin for Materials and Energy (Germany)

2011-07-01

A fundamental advantage of Cu(In,Ga)Se{sub 2} (CIGS) alloys as absorber materials in thin-film solar cells is their direct band gap energies which can be varied between 1.04 eV (CuInSe{sub 2}) and 1.68 eV (CuGaSe{sub 2}). Photoluminescence (PL) spectra of complete CIGS solar cells with a systematic variation of the Ga-content in the absorber layer will be presented. The CIGS cells investigated were grown on a Mo back contact sputtered on soda lime glass and have a Ga-concentration ranging over the entire range from CuInSe{sub 2} to CuGaSe{sub 2}. Samples with Ga-contents between 100 % and 33 % show two broad luminescence bands. In contrast, CuInSe{sub 2} exhibits only one broad luminescence band. Each band is composed of two or three different transitions. Varying excitation density over four orders of magnitude results for samples with Ga-content of 0 % and 33 % in a blueshift of the main peak with increasing excitation density. For higher Ga-concentrations, first a blue- and then a redshift of the dominating peak with increasing excitation density is visible. The temperature dependence of the PL spectra is investigated going from 4 K to 300 K.

Combined effect of structural softening and magneto-elastic coupling on elastic coefficients of Ni-Mn-Ga austenite

Czech Academy of Sciences Publication Activity Database

Seiner, Hanuš; Heczko, Oleg; Sedlák, Petr; Bodnárová, Lucie; Novotný, Michal; Kopeček, Jaromír; Landa, Michal

2013-01-01

Roč. 577, November 2013 (2013), S131-S135 ISSN 0925-8388 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GA101/09/0702; GA ČR(CZ) GAP107/11/0391; GA MŠk(CZ) 1M06031 Institutional research plan: CEZ:AV0Z20760514; CEZ:AV0Z10100520 Keywords : Ni2MnGa * elastic constants of Ni-Mn-Ga austenite * magnetic shape memory effect * martensitic transformation * elastic softening Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 2.726, year: 2013 http://www.sciencedirect.com/science/article/pii/S0925838812000539

Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography

Energy Technology Data Exchange (ETDEWEB)

Shima, K.; Shimizu, H.; Momose, T.; Shimogaki, Y. [Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tu, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China); Takamizawa, H.; Shimizu, Y.; Inoue, K.; Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

2014-09-29

We used atom probe tomography (APT) to study the use of a Cu(Mn) as a seed layer of Cu, and a Co(W) single-layer as reliable Cu diffusion barriers for future interconnects in ultra-large-scale integration. The use of Co(W) layer enhances adhesion of Cu to prevent electromigration and stress-induced voiding failures. The use of Cu(Mn) as seed layer may enhance the diffusion barrier performance of Co(W) by stuffing the Cu diffusion pass with Mn. APT was used to visualize the distribution of W and Mn in three dimensions with sub-nanometer resolution. W was found to segregate at the grain boundaries of Co, which prevents diffusion of Cu via the grain boundaries. Mn was found to diffuse from the Cu(Mn) layer to Co(W) layer and selectively segregate at the Co(W) grain boundaries with W, reinforcing the barrier properties of Co(W) layer. Hence, a Co(W) barrier coupled with a Cu(Mn) seed layer can form a sufficient diffusion barrier with film that is less than 2.0-nm-thick. The diffusion barrier behavior was preserved following a 1-h annealing at 400 °C. The underlayer of the Cu interconnects requires a large adhesion strength with the Cu, as well as low electrical resistivity. The use of Co(W) has previously been shown to satisfy these requirements, and addition of Mn is not expected to deteriorate these properties.

Point defects as a test ground for the local density approximation +U theory: Mn, Fe, and V{sub Ga} in GaN

Energy Technology Data Exchange (ETDEWEB)

Volnianska, O.; Zakrzewski, T. [Institute of Physics PAS, 02-668 Warsaw (Poland); Boguslawski, P. [Institute of Physics PAS, 02-668 Warsaw (Poland); Institute of Physics, Kazimierz Wielki University, 85-072 Bydgoszcz (Poland)

2014-09-21

Electronic structure of the Mn and Fe ions and of the gallium vacancy V{sub Ga} in GaN was analysed within the GGA + U approach. First, the +U term was treated as a free parameter, and applied to p(N), d(Mn), and d(Fe). The band gap of GaN is reproduced for U(N) ≈ 4 eV. The electronic structure of defect states was found to be more sensitive to the value of U than that of the bulk states. Both the magnitude and the sign of the U-induced energy shifts of levels depend on occupancies, and thus on the defect charge state. The energy shifts also depend on the hybridization between defect and host states, and thus are different for different level symmetries. In the case of V{sub Ga}, these effects lead to stabilization of spin polarization and the “negative-U{sub eff}” behavior. The values of Us were also calculated using the linear response approach, which gives U(Fe) ≈ U(Mn) ≈ 4 eV. This reproduces well the results of previous hybrid functionals calculations. However, the best agreement with the experimental data is obtained for vanishing or even negative U(Fe) and U(Mn)

Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

Science.gov (United States)

Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

2016-06-16

Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the direction, which is theoretically predicted to produce a high Curie temperature.

Understanding the crystallization mechanism of delafossite CuGaO2 for controlled hydrothermal synthesis of nanoparticles and nanoplates.

Science.gov (United States)

Yu, Mingzhe; Draskovic, Thomas I; Wu, Yiying

2014-06-02

The delafossite CuGaO2 is an important p-type transparent conducting oxide for both fundamental science and industrial applications. An emerging application is for p-type dye-sensitized solar cells. Obtaining delafossite CuGaO2 nanoparticles is challenging but desirable for efficient dye loading. In this work, the phase formation and crystal growth mechanism of delafossite CuGaO2 under low-temperature (mechanism to explain the formation of large CuGaO2 nanoplates. Importantly, by suppressing this OA process, delafossite CuGaO2 nanoparticles that are 20 nm in size were successfully synthesized for the first time. Moreover, considering the structural and chemical similarities between the Cu-based delafossite series compounds, the understanding of the hydrothermal chemistry and crystallization mechanism of CuGaO2 should also benefit syntheses of other similar delafossites such as CuAlO2 and CuScO2.

Synthesis, characterization and electrocatalytic properties of delafossite CuGaO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Jahangeer [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States); Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia); Mao, Yuanbing, E-mail: yuanbing.mao@utrgv.edu [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States)

2016-10-15

Delafossite CuGaO{sub 2} has been employed as photocatalysts for solar cells, but their electrocatalytic properties have not been extensively studied, especially no comparison among samples made by different synthesis routes. Herein, we first reported the successful synthesis of delafossite CuGaO{sub 2} particles with three different morphologies, i.e. nanocrystalline hexagons, sub-micron sized plates and micron–sized particles by a modified hydrothermal method at 190 °C for 60 h [1–3], a sono-chemical method followed by firing at 850 °C for 48 h, and a solid state route at 1150 °C, respectively. Morphology, composition and phase purity of the synthesized samples was confirmed by powder X-ray diffraction and Raman spectroscopic studies, and then their electrocatalytic performance as active and cost effective electrode materials to the oxygen and hydrogen evolution reactions in 0.5 M KOH electrolyte versus Ag/AgCl was investigated and compared under the same conditions for the first time. The nanocrystalline CuGaO{sub 2} hexagons show enhanced electrocatalytic activity than the counterpart sub-micron sized plates and micron-sized particles. - Graphical abstract: Representative delafossite CuGaO2 samples with sub-micron sized plate and nanocrystalline hexagon morphologies accompanying with chronoamperometric voltammograms for oxygen evolution reaction and hydrogen evolution reaction in 0.5 M KOH electrolyte after purged with N{sub 2} gas. - Highlights: • Delafossite CuGaO{sub 2} with three morphologies has been synthesized. • Phase purity of the synthesized samples was confirmed. • Comparison on their electrocatalytic properties was made for the first time. • Their use as electrodes for oxygen and hydrogen evolution reactions was evaluated. • Nanocrystalline CuGaO{sub 2} hexagons show highest electrocatalytic activity.

Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

KAUST Repository

Barbe, Jeremy; Eid, Jessica; Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael; Agrawal, Rakesh; Del Gobbo, Silvano

2016-01-01

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning

Studies on Electronic Structure and Magnetic Properties of an Organic Magnet with Metallic Mn2+ and Cu2+ Ions

Science.gov (United States)

Yao, Jian-Guo; Peng, Guang-Xiong

2004-11-01

The electronic structure and the magnetic properties of the non-pure organic ferromagnetic compound MnCu(pbaOH)(H2O)3 with pbaOH = 2-hydroxy-1, 3-propylenebis (oxamato) are studied by using the density-functional theory with local-spin-density approximation. The density of states, total energy, and the spin magnetic moment are calculated. The calculations reveal that the compound MnCu(pbaOH)(H20)3 has a stable metal-ferromagnetic ground state, and the spin magnetic moment per molecule is 2.208 μB, and the spin magnetic moment is mainly from Mn ion and Cu ion. An antiferromagnetic order is expected and the antiferromagnetic exchange interaction of d-electrons of Cu and Mn passes through the antiferromagnetic interaction between the adjacent C, O, and N atoms along the path linking the atoms Cu and Mn. The project supported by National Natural Science Foundation of China under Grant No. 10375074 and Hubei Automotive Industries Institute Foundation under Grant No. QY2002-16

Electronic structure and x-ray spectroscopy of Cu2MnAl1-xGax

Science.gov (United States)

Rai, D. P.; Ekuma, C. E.; Boochani, A.; Solaymani, S.; Thapa, R. K.

2018-04-01

We explore the electronic and related properties of Cu2MnAl1-xGax with a first-principles, relativistic multiscattering Green function approach. We discuss our results in relation to existing experimental data and show that the electron-core hole interaction is essential for the description of the optical spectra especially in describing the X-ray absorption and magnetic circular dichroism spectra at the L2,3 edges of Cu and Mn.

Superparamagnetism in CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys

Energy Technology Data Exchange (ETDEWEB)

Grima-Gallardo, P.; Alvarado, F.; Munoz, M.; Duran, S.; Quintero, M.; Nieves, L.; Quintero, E.; Tovar, R.; Morocoima, M. [Centro de Estudios en Semiconductores (CES), Fac. Ciencias, Dpto. Fisica, Universidad de Los Andes, Merida (Venezuela); Ramos, M.A. [Laboratorio de Difraccion y Fluorescencia de Rayos-X, Instituto Zuliano de Investigaciones Tecnologicas (INZIT), La Canada de Urdaneta, Estado Zulia (Venezuela)

2012-06-15

The temperature dependencies of DC magnetic susceptibilities, {chi}(T), of CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys were measured in a SQUID apparatus using the protocol of field cooling (FC) and zero FC (ZFC). The FC curves of both samples reflect a weak ferromagnetic (or ferrimagnetic) behavior with a nearly constant value of {chi}(T) in the measured temperature range (2-300 K) indicating that the critical temperatures (T{sub c}) are >300 K. The ZFC curves diverges from FC, showing irreversibility temperatures (T{sub irr}) of {proportional_to}250 K for CuFeInTe{sub 3} and >300 K for CuFeGaTe{sub 3}, suggesting that we are dealing with cluster-glass systems in a superparamagnetic state. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Experimental study of the anisotropic magneto-Seebeck effect in (Ga,Mn)As thin films

Energy Technology Data Exchange (ETDEWEB)

Althammer, Matthias; Krupp, Alexander T.; Brenninger, Thomas; Venkateshvaran, Deepak; Opel, Matthias; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm, Ulm (Germany)

2011-07-01

In analogy to anisotropic magnetoresistance (AMR), the thermopower of ferromagnetic materials also characteristically depends on the orientation of the magnetization vector. This anisotropic magneto-thermopower - or anisotropic magneto-Seebeck effect (AMS) - has only scarcely been studied to date. Taking the ferromagnetic semiconductor (Ga,Mn)As with its large magneto-resistive effects as a prototype example, we have measured the evolution of both the AMR and the AMS effects at liquid He temperatures as a function of the orientation of a magnetic field applied in the (Ga,Mn)As film plane, for different, fixed magnetic field magnitudes. Our data show that the AMS effect can be adequately modeled only if the symmetry of the (Ga,Mn)As crystal is explicitly taken into account. We quantitatively compare our AMR and AMS measurements with corresponding model calculations, and address the validity of the Mott relations linking the magneto-resistance and the magneto-Seebeck coefficients.

Phase transition of Ni-Mn-Ga alloy powders prepared by vibration ball milling

International Nuclear Information System (INIS)

Tian, B.; Chen, F.; Tong, Y.X.; Li, L.; Zheng, Y.F.; Liu, Y.; Li, Q.Z.

2011-01-01

Research highlights: → The vibration ball milling with a high milling energy introduces the atomic disorder and large lattice distortion in the alloy during milling and makes the formation of disordered fcc structure phase in the alloy. → The transition temperature and activation energy for disordered fcc → disordered bcc are ∼320 o C and 209 ± 8 kJ/mol, respectively. → The alloy powders annealed at 800 o C for 1 h show a one-stage martensitic transformation with quite lower latent heat compared to the bulk alloy. - Abstract: This study investigated the phase transformation of the flaky shaped Ni-Mn-Ga powder particles with thickness around 1 μm prepared by vibration ball milling and post-annealing. The SEM, XRD, DSC and ac magnetic susceptibility measurement techniques were used to characterize the Ni-Mn-Ga powders. The structural transition of Heusler → disordered fcc occurred in the powders prepared by vibration ball milling (high milling energy) for 4 h, which was different from the structural transition of Heusler → disordered fct of the powders fabricated by planetary ball milling (low milling energy) for 4 h. The two different structures after ball milling should be due to the larger lattice distortion occurred in the vibration ball milling process than in the planetary ball milling process. The structural transition of disordered fcc → disordered bcc took place at ∼320 o C during heating the as-milled Ni-Mn-Ga powders, which was attributed to the elimination of lattice distortion caused by ball milling. The activation energy for this transition was 209 ± 8 kJ/mol. The Ni-Mn-Ga powder annealed at 800 o C mainly contained Heusler austenite phase at room temperature and showed a low volume of martensitic transformation upon cooling. The inhibition of martensitic transformation might be attributed to the reduction of grain size in the annealed Ni-Mn-Ga particles.

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Energy Technology Data Exchange (ETDEWEB)

Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

2009-07-22

By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

Science.gov (United States)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Study of the structural and magnetic properties and gallium exchange phenomenon in a Mn-Ga alloy doped by Cr during the milling and annealing process

Energy Technology Data Exchange (ETDEWEB)

Fariba, Nazari; Mohsen, Hakimi, E-mail: hakimi.m@yazd.ac.ir; Hossein, Mokhtari; Mohsen, Khajeh Aminian

2015-05-15

The effect of milling and annealing process on Cr doped Mn{sub 3}Ga nanocrystallite has been investigated. Phase determination analysis shows that Ga turning to get out of Mn-Ga structure and tend to make bonding to Cr and form Cr{sub 3}Ga{sub 4} product during milling process. Annealing of the new phases lead to decomposition of Cr{sub 3}Ga{sub 4} and formation of a new Mn-Ga phase in reverse direction, in the other words diffusion of Ga atoms occurs from Cr{sub 3}Ga{sub 4} to Mn phase and α-Mn and Cr{sub 3}Ga{sub 4} change to Mn{sub 3}Ga{sub 2} and Cr phases. The variation of coersivity, magnetization and magnetic state of different samples was explained according to the crystallite size of the present phases and grain boundary effects. It was also confirmed that formation of Mn-Cr clusters plays an important role in increase of saturation magnetization.

Lattice location of Mn in GaAs and GaN

CERN Document Server

De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the link between magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials...

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Science.gov (United States)

Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

2009-07-01

By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

Phase stability of CuAlMn shape memory alloys

Czech Academy of Sciences Publication Activity Database

Zárubová, Niva; Novák, Václav

2004-01-01

Roč. 378, - (2004), s. 216-221 ISSN 0921-5093 Institutional research plan: CEZ:AV0Z1010914 Keywords : CuAlMn * shape memory alloys * martensitic transformation * - stress -strain tests * tension-compression cycling * history dependent phenomena Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.445, year: 2004

Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

Science.gov (United States)

Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

2017-10-01

We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

Tuning of cu doping on phase transition and high-field phase diagram of Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Shang, C. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Xia, Z.C., E-mail: xia9020@hust.edu.cn [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Wei, M.; Jin, Z.; Chen, B.R.; Shi, L.R. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Ouyang, Z.W. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Huang, S.; Xiao, G.L. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-10-15

Pulsed high magnetic fields up to 52 T have been used in the systematic investigation of the magnetic properties of manganites Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3} (0≤x≤0.15). The Cu-doping dependent first-order metamagnetic transitions are observed below the charge ordering temperature, which is ascribed to both Cu-doping and field-induced collapse of the charge ordering with antiferromagnetic phase. Based on the magnetization and electrical transport measurements, a three-dimensional phase diagram with coordinate axis of temperature, magnetic field, and doping level has been obtained, in which the critical fields of the metamagnetic transitions increase with the increase in Cu content and decrease with increasing temperature. The experimental results confirm that Mn-site substitution with Cu destroys the Mn{sup 3+}–O{sup 2−}–Mn{sup 4+} bridges and weakens the double exchange interaction between Mn{sup 3+} and Mn{sup 4+} ions, which shows an obvious tuning effect on the metamagnetic transition under the external magnetic field. - Highlights: • Tuning effect of Cu-doping on the properties of Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3} was studied. • First-order metamagnetic transition was observed under high magnetic fields. • A phase diagram with temperature, magnetic field and doping level was obtained. • Cu-doping weakens the ferromagnetic coupling in Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3}.

Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Seña, N.; Dussan, A. [Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá (Colombia); Mesa, F. [Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Universidad del Rosario, Bogotá (Colombia); Castaño, E.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia)

2016-08-07

We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the Mn{sub Ga} substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μ{sub B}/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.

Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2009-08-01

Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

Intrinsic transmission magnetic circular dichroism spectra of GaMnAs

Science.gov (United States)

Terada, Hiroshi; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

Transmission magnetic circular dichroism (MCD) spectroscopy has been widely used to reveal the spin-dependent band structure of ferromagnetic semiconductors. In these previous studies, some band pictures have been proposed from the spectral shapes observed in transmission MCD; however, extrinsic signals originating from optical interference have not been appropriately considered. In this study, we calculate the MCD spectra taking into account the optical interference of the layered structure of samples and show that the spectral shape of MCD is strongly influenced by optical interference. To correctly understand the transmission MCD, we also calculate the intrinsic MCD spectra of GaMnAs that are not influenced by the optical interference. The spectral shape of the intrinsic MCD can be explained by the characteristic band structure of GaMnAs, that is, the spin-polarized valence band and the impurity band existing above the valence band top.

Characterization of as-grown and Ge-ion implanted CuGaSe{sub 2} thin films prepared by the CCSVT technique

Energy Technology Data Exchange (ETDEWEB)

Doka Yamigno, Serge

2006-08-15

Single phase polycrystalline thin films of CuGaSe{sub 2} in the compositional range of 1.0=[Ga]/[Cu]=1.3, corresponding to a thickness ranging from 1.6 {mu}m to 1.9 {mu}m deposited onto plain or Mo-coated soda lime glass (SLG) were prepared and found to be polycrystalline with a strongly preferred <221> orientation. A combination of microstructural investigations of the films by TEM, EDX within the TEM and ERDA measurements has shown that CuGaSe{sub 2} thin films possess high crystalline bulk quality with Cu, Ga and Se homogeneously distributed within the CuGaSe{sub 2} bulk. One of the main result of this present work was found to be the accumulation of Ga in the region of the CuGaSe2/Mo interface and the dependence of the CuGaSe{sub 2} surface composition on the integral [Ga]/[Cu] ratio in the film, namely Ga- and Cu-poor, Se-rich surface for stoichiometric films; and Cu- poor, and Ga- and Se- rich surface for increasing [Ga]/[Cu] ratios. These observations were also supported by optical measurements carried out through photoluminescence and absorption measurements. In order to gain a better understanding of the influence of the extrinsic doping of the CuGaSe{sub 2} films and why many attempts towards the type inversion in the p-type CuGaSe2 compounds by varying the composition or by doping with extrinsic defects have failed, ion implantation was used to introduce Ge into CuGaSe{sub 2}. Photoluminescence of the Ge containing films has evidenced the presence of new defects such as donor levels in the band gap. Electron spin resonance measurements of the Ge- containing CuGaSe2 films has highlighted an additional ESR resonance observed at g=2.003 ascribed to donors. However, Curie paramagnetism up to room temperature for all the Ge implanted films, characteristic of localized states has been observed for this resonance. (orig.)

In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates

Energy Technology Data Exchange (ETDEWEB)

Cheng, Weidong [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Liu, Mingling [Department of Mechanical and Electrical Engineering, Qinhuangdao Institute of Technology, Qinhuangdao 066100 (China); Wu, Zhaojun [Department of Practice Teaching and Equipment Management, Qiqihar University, Qiqihar 161006 (China); Xing, Xueqing; Mo, Guang; Wu, Zhonghua [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Liu, Hong, E-mail: lhong68@sina.com.cn [School of Biomedical Engineering, Capital Medical University, Beijing 100069 (China)

2015-11-01

Liquid Ga could be used as a flexible heat-transfer medium or contact medium in the synchrotron-radiation-based instruments. The chemical stability of liquid Ga on other metal surface determines the serviceability of liquid Ga. In this paper, the oxidation evolutions of liquid Ga on Ni and Cu substrates have been investigated by in-situ grazing incidence small angle X-ray scattering (GISAXS) as a function of substrate temperature. The liquid Ga on Ni and Cu substrates shows different oxidation behaviors. A successive and slower oxidation from oxide clusters to oxide layer takes place with temperature increasing from 25 to 190 °C on the surface of the Ga/Ni/Si specimen, but a quick oxidation occurs on the entire surface of the Ga/Cu/Si specimen at the initial 25 °C. The subsequent heating increases the surface roughness of both liquid Ga, but increases simultaneously the surface curvature of the Ga/Cu/Si specimen. The understanding of the substrate-dependent oxidation behavior of liquid Ga is beneficial to its application as a heat-transfer medium.

Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

Directory of Open Access Journals (Sweden)

M. Ciorga

2011-06-01

Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

Controllable Growth of Ga Film Electrodeposited from Aqueous Solution and Cu(In,Ga)Se2 Solar Cells.

Science.gov (United States)

Bi, Jinlian; Ao, Jianping; Gao, Qing; Zhang, Zhaojing; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2017-06-07

Electrodepositon of Ga film is very challenging due to the high standard reduction potential (-0.53 V vs SHE for Ga 3+ ). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl 3 aqueous solution. A high deposition rate of Ga 3+ and H + can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm 2 , pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and V oc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.

Investigation of Cu-poor and Cu-rich Cu(In,Ga)Se{sub 2}/CdS interfaces using hard X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ümsür, B., E-mail: buenyamin.uemsuer@helmholtz-berlin.de [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Calvet, W.; Höpfner, B.; Steigert, A.; Lauermann, I.; Gorgoi, M.; Prietzel, K.; Navirian, H.A.; Kaufmann, C.A.; Unold, T. [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, M. Ch. [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Department of Physics, Arnimallee 14, D-14195 Berlin (Germany)

2015-05-01

Cu-poor and Cu-rich Cu(In,Ga)Se{sub 2} (CIGSe) absorbers were used as substrates for the chemical bath deposition of ultrathin CdS buffer layers in the thickness range of a few nanometers in order to make the CIGSe/CdS interface accessible by hard X-ray photo-emission spectroscopy. The composition of both, the absorber and the buffer layer as well as the energetics of the interface was investigated at room temperature and after heating the samples to elevated temperatures (200 °C, 300 °C and 400 °C). It was found that the amount of Cd after the heating treatment depends on the near surface composition of the CIGSe absorber. No Cd was detected on the Cu-poor surface after the 400 °C treatment due to its diffusion into the CIGSe layer. In contrast, Cd was still present on the Cu-rich surface after the same treatment at 400 °C. - Highlights: • Cd diffusion into Cu(In,Ga)Se{sub 2} (CIGSe) absorber is investigated. • Cu-poor and Cu-rich CIGSe samples are compared. • Cd diffusion into CIGSe is found to be dependent on the surface composition of CIGSe.

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

DEFF Research Database (Denmark)

Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi

2013-01-01

.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host...

One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

Science.gov (United States)

Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

2005-03-01

Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

Efficiency of Energy Harvesting in Ni-Mn-Ga Shape Memory Alloys

Science.gov (United States)

Lindquist, Paul; Hobza, Tony; Patrick, Charles; Müllner, Peter

2018-03-01

Many researchers have reported on the voltage and power generated while energy harvesting using Ni-Mn-Ga shape memory alloys; few researchers report on the power conversion efficiency of energy harvesting. We measured the magneto-mechanical behavior and energy harvesting of Ni-Mn-Ga shape memory alloys to quantify the efficiency of energy harvesting using the inverse magneto-plastic effect. At low frequencies, less than 150 Hz, the power conversion efficiency is less than 0.1%. Power conversion efficiency increases with (i) increasing actuation frequency, (ii) increasing actuation stroke, and (iii) decreasing twinning stress. Extrapolating the results of low-frequency experiments to the kHz actuation regime yields a power conversion factor of about 20% for 3 kHz actuation frequency, 7% actuation strain, and 0.05 MPa twinning stress.

The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures

International Nuclear Information System (INIS)

Feng, Yu; Tian, Chun-lin; Yuan, Hong-kuan; Kuang, An-long; Chen, Hong

2015-01-01

We study the effect of disorder, including swap and antisite, on the electronic and magnetic properties of heterostructures by using extensive first-principles calculations within density functional theory. Thirteen kinds of swap disorders and sixteen kinds of antisite disorders are proposed and studied comprehensively. Our calculation reveals that disorders at the interface have low formation energies, indicating that disorders are most likely to appear at the interface instead of the deep layer. Among all kinds of disorders, Mn 1 (Al) (where the interface Mn is occupied by an Al atom) and Mn 1 (As) (where the interface Mn is occupied by an As atom from a GaAs slab) antisite disorders possess the lowest formation energies. This shows that the interface Mn has a higher probability of being replaced by an Al atom, and that an As atom from a GaAs slab easily diffuses into a Mn 2 CoAl slab and occupies the position of the interface Mn. Moreover, further study on the interface electronic structure reveals that interface spin polarization suffers dramatic reduction due to Mn 1 (Al) and Mn 1 (As) antisite disorders. It can be deduced that the interface state, together with Mn 1 (Al) and Mn 1 (As) antisite disorders, may be the main causes of the low TMR ratio of Mn 2 CoAl/GaAs heterostructures. (paper)

In situ TEM study of deformation twinning in Ni-Mn-Ga non-modulated martensite

Czech Academy of Sciences Publication Activity Database

Zárubová, Niva; Ge, Y.; Heczko, Oleg; Hannula, S.-P.

2013-01-01

Roč. 61, č. 14 (2013), s. 5290-5299 ISSN 1359-6454 R&D Projects: GA ČR(CZ) GAP107/11/0391; GA MŠk(CZ) LM2011026; GA ČR GAP107/12/0800; GA AV ČR IAA100100920 Institutional support: RVO:68378271 Keywords : Ni-Mn-Ga * in situ TEM * magnetic shape memory * deformation twinning * twinning dislocation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.940, year: 2013

A study on the cementation of Cu, Ni and Co ions with Mn powders in chloride solution

Energy Technology Data Exchange (ETDEWEB)

Ahn, Jae-Woo [Daejin University, Pochun-gun(Korea); Ahn, Jong-Gwan [Korea Univ., Seoul(Korea); Park, Kyung-Ho [Korea Institute of Geology Mining and Materials, Taejeon (Korea)

2000-06-30

A study on the cementation for the recovery of Cu, Ni and Co with Mn metallic powders in leaching solution from the manganese nodule that have removed Fe ions was studied. The results showed that the recovery efficiencies of metal ions with Mn powders increased when the temperature, pH and the concentration of chloride ions were increased in mixed solution. And the recovery efficiencies of Cu was 98% and not changed with the addition amounts of Mn powders but, in case of Co and Ni, the recovery efficiencies were increased with the addition amounts. The particle size of precipitate was about 5 {mu}m. From the results of experiment we proposed the two-step cementation process for the recovery of Cu, Ni and Co with Mn powders. (author). 9 refs., 4 tabs., 14 figs.

4-CM2 CuInGaSe2 based solar cells

International Nuclear Information System (INIS)

Devaney, W.E.; Stewart, J.M.; Chen, W.S.

1990-01-01

This paper reports that polycrystalline thin-film solar cells with the structure ZnO/CdZnS/CuInGaSe 2 have been fabricated with larger single cell areas than have been previously reported. A cell of area 4-cm 2 has been made with an Am1.5, 100 mW/cm 2 total area conversion efficiency of (11.1% 912.0% active area) and AMO conversion efficiency of 10.0% (10.9% active area). The CuInGaSe 2 layer had a gallium to indium ratio of 0.26:0.74 with a band gap of approximately 1.15 eV. The cells use an isolated tab design for the negative (grid) contact, demonstrating the ability to pattern the semiconductor layers. Such CuInGaSe 2 based cells may be suitable both for large area terrestrial applications and for single-junction space cell applications

Designing a New Ni-Mn-Sn Ferromagnetic Shape Memory Alloy with Excellent Performance by Cu Addition

Directory of Open Access Journals (Sweden)

Kun Zhang

2018-02-01

Full Text Available Both magnetic-field-induced reverse martensitic transformation (MFIRMT and a high working temperature are crucial for the application of Ni-Mn-Sn magnetic shape memory alloys. Here, by first-principles calculations, we demonstrate that the substitution of Cu for Sn is effective not only in enhancing the MFIRMT but also in increasing martensitic transformation, which is advantageous for its application. Large magnetization difference (ΔM in Ni-Mn-Sn alloy is achieved by Cu doping, which arises from the enhancement of magnetization of austenite due to the change of Mn-Mn interaction from anti-ferromagnetism to ferromagnetism. This directly leads to the enhancement of MFIRMT. Meanwhile, the martensitic transformation shifts to higher temperature, owing to the energy difference between the austenite L21 structure and the tetragonal martensite L10 structure increases by Cu doping. The results provide the theoretical data and the direction for developing a high temperature magnetic-field-induced shape memory alloy with large ΔM in the Ni-Mn-Sn Heusler alloy system.

The effect of magnetic stress and stiffness modulus on resonant characteristics of Ni-Mn-Ga ferromagnetic shape memory alloy actuators

International Nuclear Information System (INIS)

Techapiesancharoenkij, Ratchatee; Kostamo, Jari; Allen, Samuel M.; O'Handley, Robert C.

2011-01-01

The prospect of using ferromagnetic shape memory alloys (FSMAs) is promising for a resonant actuator that requires large strain output and a drive frequency below 1 kHz. In this investigation, three FSMA actuators, equipped with tetragonal off-stoichiometric Ni 2 MnGa single crystals, were developed to study their frequency response and resonant characteristics. The first actuator, labeled as A1, was constructed with low-k bias springs and one Ni-Mn-Ga single crystal. The second actuator, labeled as A2, was constructed with high-k bias springs and one Ni-Mn-Ga crystal. The third actuator, labeled as A3, was constructed with high-k bias springs and two Ni-Mn-Ga crystals connected in parallel. The three actuators were magnetically driven over the frequency range of 10 Hz-1 kHz under 2 and 3.5 kOe magnetic-field amplitudes. The field amplitude of 2 kOe is insufficient to generate significant strain output from all three actuators; the maximum magnetic-field-induced strain (MFIS) at resonance is 2%. The resonant MFIS output improves to 5% under 3.5-kOe amplitude. The frequency responses of all three actuators show a strong effect of the spring k constant and the Ni-Mn-Ga modulus stiffness on the resonant frequencies. The resonant frequency of the Ni-Mn-Ga actuator was raised from 450 to 650 Hz by increasing bias spring k constant and/or the number of Ni-Mn-Ga crystals. The higher number of the Ni-Mn-Ga crystals not only increases the magnetic force output but also raises the total stiffness of the actuator resulting in a higher resonant frequency. The effective modulus of the Ni-Mn-Ga is calculated from the measured resonant frequencies using the mass-spring equation; the calculated modulus values for the three actuators fall in the range of 50-60 MPa. The calculated effective modulus appears to be close to the average modulus value between the low twinning modulus and high elastic modulus of the untwined Ni-Mn-Ga crystal. - Highlights: → Dynamic FSMA actuation shows

Effect of disorder on the magnetic properties of cubic Mn2RuxGa compounds: A first-principles study

International Nuclear Information System (INIS)

Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.; Blügel, S.

2014-01-01

We perform first-principles electronic structure calculations to explain the anomalous magnetic behavior of the Mn 2 Ru x Ga compounds upon Ru doping as shown experimentally recently by Kurt et al. [Phys. Rev. Lett. 112, 027201 (2014)]. Our results suggest that disorder caused by the distribution of the Mn and Ru atoms at various sites reproduces the experimental data. All compounds present antiparallel alignment of the neighboring Mn magnetic moments and, with the exception of Mn 2 RuGa, none of them presents half metallic behavior.

The role of Cd and Ga in the Cu(In,Ga)S2/CdS heterojunction studied with X-ray spectroscopic methods

International Nuclear Information System (INIS)

Johnson, Benjamin E.

2010-01-01

Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S 2 /CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S 2 (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S 2 /CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S 2 /CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S 2 conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot be CdS as this is

Effect of iron promoter on structure and performance of CuMnZnO catalyst for higher alcohols synthesis

Energy Technology Data Exchange (ETDEWEB)

Ding, Mingyue [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Qiu, Minghuang [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Graduate School of Chinese Academy of Science, Beijing 100049 (China); Wang, Tiejun [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Ma, Longlong; Wu, Chuangzhi [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Liu, Jianguo [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Graduate School of Chinese Academy of Science, Beijing 100049 (China)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Incorporation of iron promotes the dispersion of catalyst particles. Black-Right-Pointing-Pointer Adding iron facilitates the separation of CuO from the Cu-Mn solid solution. Black-Right-Pointing-Pointer Both the copper and iron carbides are well dispersed in higher iron amount. Black-Right-Pointing-Pointer The selectivity to C{sub 2}{sup +}OH is promoted by increasing iron concentration. -- Abstract: Effect of iron promoter on the microstructures of CuMnZnO catalysts was investigated by N{sub 2} physical adsorption (BET), X-ray diffraction (XRD), and temperature-programmed reduction of hydrogen (H{sub 2}-TPR). Higher alcohols synthesis (HAS) was performed in a fixed bed reactor. The characterization results indicated that incorporation of iron in the CuMnZnO catalyst resulted in the increase of BET surface area and the dispersion of catalyst particles. Adding iron facilitated the formation of Fe-Mn solid solution and reduced the interaction between copper and manganese, which promoted the separation of CuO from the Cu-Mn solid solution and the reduction of the catalyst. In the HAS reaction, the catalytic activity of CO hydrogenation and the selectivity to C{sub 2}{sup +}OH and hydrocarbons presented an increasing trend with the increase in iron concentration, which may be attributed to the synergistic effect between the dispersed copper and iron carbides.

Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

Science.gov (United States)

Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

2018-03-01

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

What is the Valence of Mn in Ga(1-x)Mn(x)N?

Science.gov (United States)

Nelson, Ryky; Berlijn, Tom; Moreno, Juana; Jarrell, Mark; Ku, Wei

2015-11-06

We investigate the current debate on the Mn valence in Ga(1-x)Mn(x)N, a diluted magnetic semiconductor (DMS) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn valence to be close to 2+ (d(5)), but in a mixed spin configuration with average magnetic moments of 4μ(B). By integrating out high-energy degrees of freedom differently, we further derive for the first time from first-principles two low-energy pictures that reflect the intrinsic dual nature of the doped holes in the DMS: (1) an effective d(4) picture ideal for local physics, and (2) an effective d(5) picture suitable for extended properties. In the latter, our results further reveal a few novel physical effects, and pave the way for future realistic studies of magnetism. Our study not only resolves one of the outstanding key controversies of the field, but also exemplifies the general need for multiple effective descriptions to account for the rich low-energy physics in many-body systems in general.

Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

Science.gov (United States)

Wang, Cai-Feng; Hu, Bo

2017-10-01

ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Directory of Open Access Journals (Sweden)

Chun-Yao Hsu

2013-01-01

Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

On the ternary Ag – Cu – Ga system: Electromotive force measurement and thermodynamic modeling

International Nuclear Information System (INIS)

Gierlotka, Wojciech; Jendrzejczyk-Handzlik, Dominika; Fitzner, Krzysztof; Handzlik, Piotr

2015-01-01

The ternary silver–copper–gallium system found application as a solder material in jewel crafting and electronics, thus a phase diagram of this system seems to be important tool, which is necessary for a proper application of different alloys. The activity of gallium in liquid phase was determined by electromotive measurement technique and after that the equilibrium diagram of Ag – Cu – Ga was modeled based on available experimental data using Calphad approach. A set of Gibbs energies was found and used for calculation a phase diagram and thermodynamic properties of liquid phase. The experimental data was reproduced well by calculation. - Highlights: • For the first time activity of Ga in liquid Ag – Cu – Ga alloys was measured. • For the first time the ternary Ag – Cu – Ga system was thermodynamically modeled. • Modeled Ag – Cu – Ga system reproduces experimental data well

Influence of structural transition on the electronic structures and physical properties of Ni2MnGa alloy films

International Nuclear Information System (INIS)

Kim, K. W.; Kudryavtsev, Y. V.; Rhee, J. Y.; Lee, N. N.; Lee, Y. P.

2004-01-01

Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K, while the disordered films exhibit characteristics of amorphous alloys. It was also found that the disordering in Ni 2 MnGa alloy films did not change to any appreciable magnetic ordering down to 4 K. Annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic, magneto-optical and transport properties of the ordered Ni 2 MnGa alloy films. It was also understood, for the first time, how the structural ordering in the films influences the physical properties, including the surprising loss of ferromagnetism in the disordered films, as a result of performing electronic-structure calculations.

Mitigation of chromium poisoning of cathodes in solid oxide fuel cells employing CuMn1.8O4 spinel coating on metallic interconnect

Science.gov (United States)

Wang, Ruofan; Sun, Zhihao; Pal, Uday B.; Gopalan, Srikanth; Basu, Soumendra N.

2018-02-01

Chromium poisoning is one of the major reasons for cathode performance degradation in solid oxide fuel cells (SOFCs). To mitigate the effect of Cr-poisoning, a protective coating on the surface of interconnect for suppressing Cr vaporization is necessary. Among the various coating materials, Cu-Mn spinel coating is considered to be a potential candidate due to their good thermal compatibility, high stability and good electronic conductivity at high temperature. In this study, Crofer 22 H meshes with no protective coating, those with commercial CuMn2O4 spinel coating and the ones with lab-developed CuMn1.8O4 spinel coating were investigated. The lab-developed CuMn1.8O4 spinel coating were deposited on Crofer 22 H mesh by electrophoretic deposition and densified by a reduction and re-oxidation process. With these different Crofer 22 H meshes (bare, CuMn2O4-coated, and CuMn1.8O4-coated), anode-supported SOFCs with Sr-doped LaMnO3-based cathode were electrochemically tested at 800 °C for total durations of up to 288 h. Comparing the mitigating effects of the two types of Cu-Mn spinel coatings on Cr-poisoning, it was found that the performance of the denser lab-developed CuMn1.8O4 spinel coating was distinctly better, showing no degradation in the cell electrochemical performance and significantly less Cr deposition near the cathode/electrolyte interface after the test.

Magnetic properties and EXAFS study of nanocrystalline Fe2Mn0.5Cu0.5Al synthesized using mechanical alloying technique

International Nuclear Information System (INIS)

Nanto, Dwi; Yang, Dong-Seok; Yu, Seong-Cho

2014-01-01

Nanocrystalline Fe 2 Mn 0.5 Cu 0.5 Al has been synthesized by the mechanical alloying technique and studied as a function of milling time. Alloy nature of Fe 2 Mn 0.5 Cu 0.5 Al was observed in a sample milled for 96 h. The magnetic saturation is 4.0 μ B /f.u., which coincidently follows Slater–Pauling rule at 5 K. Nanocrystalline Fe 2 Mn 0.5 Cu 0.5 Al has enhanced saturate magnetization compared to any other fabrication of Fe 2 MnAl reported. Cu element plays an important role in site competes with other elements and may result in the enhancement of saturate magnetization. In accordance to the magnetic results and EXAFS pattern, it was revealed that the dynamics of magnetic properties were confirmed as structural changes of nanocrystalline Fe 2 Mn 0.5 Cu 0.5 Al

Influence of Mn incorporation for Ni on the magnetocaloric properties of rapidly solidified off-stoichiometric NiMnGa ribbons

Energy Technology Data Exchange (ETDEWEB)

Dey, Sushmita; Singh, Satnam; Roy, R.K.; Ghosh, M.; Mitra, A.; Panda, A.K., E-mail: akpanda@nmlindia.org

2016-01-01

The present investigation addresses the magnetocaloric behaviour in a series of Ni{sub 77−x}Mn{sub x}Ga{sub 23} (x=23, 24, 25, 27 and 29) rapidly solidified alloys prepared in the form of ribbons by melt spinning technique. The approach of the study is to identify the off-stoichiometric composition wherein room temperature magneto-structural transformation is achieved. The alloy chemistry was tailored through Mn incorporation for Ni such that the magnetic and structural transitions were at close proximity to achieve highest entropy value of ΔS equal to 8.51 J Kg{sup −1} K{sup −1} for #Mn{sub 24} ribbon measured at an applied field of 3 T. When such transitions are more staggered as in #Mn{sub 29} the entropy value of ribbon reduced to as low as 1.61 J Kg{sup −1} K{sup −1}. Near room temperature transformations in #Mn{sub 24} ribbon have been observed through calorimetric and thermomagnetic evaluation. Reverse martensitic transformation (martensite→autstenite) temperature indicates not only distinct change in the saturation flux density but also an inter-martensitic phase. Microstructural analysis of #Mn{sub 24} alloy ribbon revealed structural ordering with the existence of plate morphology evidenced for martensitic phase. - Highlights: • Magnetocaloric effect in a series of melt spun NiMnGa ribbon is addressed. • The alloy series revealed austenitic state as well as its presence with martensite. • The morphology of the ribbons has been shown and discussed through phase analysis. • Influence of magnetising field on entropy and relative cooling power is discussed. • Influence of intermartensitic state on magnetization plots have also been shown.

Defect chalcopyrite Cu(In{sub 1-x}Ga{sub x}){sub 3}Se{sub 5} (0Ga-content Cu(In,Ga) Se{sub 2}-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Contreras, M.A.; Wiesner, H.; Niles, D.; Ramanathan, K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0CuIn{sub 1 {minus}x}Ga{sub x}Se{sub 2} absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, the authors postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character - both structural and electrical - at the very chalcopyrite/defect chalcopyrite interface. They demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

Lattice location of Mn in GaAs and GaN

CERN Document Server

De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the linkage of magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials f...

First-principles calculations of the electronic, vibrational, and elastic properties of the magnetic laminate Mn2GaC

International Nuclear Information System (INIS)

Thore, A.; Dahlqvist, M.; Alling, B.; Rosén, J.

2014-01-01

In this paper, we report the by first-principles predicted properties of the recently discovered magnetic MAX phase Mn 2 GaC. The electronic band structure and vibrational dispersion relation, as well as the electronic and vibrational density of states, have been calculated. The band structure close to the Fermi level indicates anisotropy with respect to electrical conductivity, while the distribution of the electronic and vibrational states for both Mn and Ga depend on the chosen relative orientation of the Mn spins across the Ga sheets in the Mn–Ga–Mn trilayers. In addition, the elastic properties have been calculated, and from the five elastic constants, the Voigt bulk modulus is determined to be 157 GPa, the Voigt shear modulus 93 GPa, and the Young's modulus 233 GPa. Furthermore, Mn 2 GaC is found relatively elastically isotropic, with a compression anisotropy factor of 0.97, and shear anisotropy factors of 0.9 and 1, respectively. The Poisson's ratio is 0.25. Evaluated elastic properties are compared to theoretical and experimental results for M 2 AC phases where M = Ti, V, Cr, Zr, Nb, Ta, and A = Al, S, Ge, In, Sn.

Effect of alloying elements on solidification of primary austenite in Ni-Mn-Cu cast iron

Directory of Open Access Journals (Sweden)

A. Janus

2011-04-01

Full Text Available Within the research, determined were direction and intensity of alloying elements influence on solidification way (directional orvolumetric of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu. 50 cast shafts dia. 20 mm were analysed.Chemical composition of the alloy was as follows: 1.7 to 3.3 % C, 1.4 to 3.1 % Si, 2.8 to 9.9 % Ni, 0.4 to 7.7 % Mn, 0 to 4.6 % Cu, 0.14 to0.16 % P and 0.03 to 0.04 % S. The discriminant analysis revealed that carbon influences solidification of primary austenite dendrites most intensively. It clearly increases the tendency to volumetric solidification. Influence of the other elements is much weaker. This means that the solidification way of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu does not differ from that in an unalloyed cast iron.

Microstructure and mechanical properties of Al-Cu-Mg-Mn-Zr alloy with trace amounts of Ag

International Nuclear Information System (INIS)

Liu Xiaoyan; Pan Qinglin; Lu Congge; He Yunbin; Li Wenbin; Liang Wenjie

2009-01-01

The microstructure and mechanical properties of Al-Cu-Mg-(Ag)-Mn-Zr alloys were studied by means of tensile testing, optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that small additions of Ag to Al-Cu-Mg-Mn-Zr alloy can accelerate the hardening effect of the aged alloy and reduce the time to peak-aged. The mechanical properties can be improved both at room temperature and at elevated temperatures, which is attributed to the fine and uniform plate-like Ω precipitates. Meanwhile the ductility of the studied alloys remains at relatively high level. The major strengthening phases of the Ag-free alloy are θ' and less S', while that of Al-Cu-Mg-Mn-Zr alloy containing trace amounts of Ag are Ω and less θ'.

Exchange and spin-orbit induced phenomena in diluted (Ga, Mn) As from first principles

Czech Academy of Sciences Publication Activity Database

Kudrnovský, Josef; Drchal, Václav; Turek, Ilja

2016-01-01

Roč. 94, č. 5 (2016), 1-8, č. článku 054428. ISSN 2469-9950 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68378271 ; RVO:68081723 Keywords : GaMnAs * Curie temperature * spin-stiffness * anisotropic magnetoresistance * anomalous Hall effect * Gilbert damping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Catalytic behavior and synergistic effect of nanostructured mesoporous CuO-MnO{sub x}-CeO{sub 2} catalysts for chlorobenzene destruction

Energy Technology Data Exchange (ETDEWEB)

He, Chi, E-mail: chi_he@mail.xjtu.edu.cn [Key Lab of Urban Environment and Health, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Department of Environmental Science and Engineering, School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Yu, Yanke [Key Lab of Urban Environment and Health, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Shen, Qun [Research Center for Greenhouse Gases and Environmental Engineering, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Chen, Jinsheng, E-mail: jschen@iue.ac.cn [Key Lab of Urban Environment and Health, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Qiao, Nanli [Department of Environmental Nano-materials, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

2014-04-01

Graphical abstract: - Highlights: • Mesoporous CuO-MnO{sub x}-CeO{sub 2} oxides with enhanced reducibility and oxygen mobility. • Incorporation of Cu and Mn ions causes abundant crystal defects and oxygen vacancies. • Surface oxygen concentration and active oxygen mobility determine the catalytic efficiency. • Catalysts with conspicuous chlorobenzene low-temperature removal activity and durability. - Abstract: Mesoporous CuO-MnO{sub x}-CeO{sub 2} composite metal oxides with different copper and manganese loadings were prepared by a urea-assistant hydrothermal method, and were further adopted for the complete catalytic combustion of chlorobenzene. The effects of reaction conditions such as inlet reagent concentration and water feed concentration on chlorobenzene combustion were also studied. The structure and textural properties of the synthesized catalysts were characterized via the XRD, N{sub 2} adsorption/desorption, FE-SEM, TEM, H{sub 2}-TPR, O{sub 2}-TPD, and XPS techniques. The characterization results reveal that the presence of a small amount of Mn species can facilitate the incorporation of Cu and Mn ions into ceria lattice to form Cu-Mn-Ce-O solid solution. The synergistic effect of Cu and Mn species can reduce the redox potential of the composite catalysts, and produce large amounts of oxygen vacancies in the interface of CuO{sub x}, MnO{sub x}, and CeO{sub 2} oxides. The catalyst with Cu/Mn atomic ratio of 1/1 exhibits the best chlorobenzene elimination capability, oxidizing about 95% of the inlet chlorobenzene at 264 °C with CO{sub 2} selectivity higher than 99.5%. The concentration and mobility of the chemically adsorbed oxygen are vital for the effective removal of surface Cl species, which inhibits the dissociation of oxygen molecules and decreases the reducibility of the copper and manganese species. It can be rationally concluded that the superior catalytic performance and durability of the mesoporous CuO-MnO{sub x}-CeO{sub 2} composite

Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

Science.gov (United States)

Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

2007-09-01

Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

The role of Cd and Ga in the Cu(In,Ga)S{sub 2}/CdS heterojunction studied with X-ray spectroscopic methods

Energy Technology Data Exchange (ETDEWEB)

Johnson, Benjamin E.

2010-08-15

Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S{sub 2}/CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S{sub 2} (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S{sub 2}/CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S{sub 2}/CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S{sub 2} conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot

Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

Science.gov (United States)

Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

2016-03-01

The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

Directory of Open Access Journals (Sweden)

Hailong eWang

2016-03-01

Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Udai P. Singh

2010-01-01

Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

Effect of Thermomagnetic Treatment on Structure and Properties of Cu-Al-Mn Alloy.

Science.gov (United States)

Titenko, A N; Demchenko, L D; Perekos, A O; Gerasimov, O Yu

2017-12-01

The paper studies the influence of magnetic field on magnetic and mechanical properties of Cu-Mn-Al alloy under annealing. The comparative analysis of the magnetic field orientation impact on solid solution decomposition processes in a fixed annealing procedure is held using the methods of low-field magnetic susceptibility, specific magnetization, and microhardness test. The paper highlights changes in the magnetic and mechanical properties of Cu-Al-Mn alloy as the result of change in a critical size of forming precipitated ferromagnetic phase and determines correlation in the behavior of magnetic and mechanical properties of the alloy, depending on a critical nucleus size of forming precipitated ferromagnetic phase.

Positron Annihilation Spectroscopy and Small Angle Neutron Scattering Characterization of Nanostructural Features in Irradiated Fe-Cu-Mn Alloys

International Nuclear Information System (INIS)

Wirth, B D; Asoka-Kumar, P; Howell, R H; Odette, G R; Sterne, P A

2001-01-01

Radiation embrittlement of nuclear reactor pressure vessel steels results from a high number density of nanometer sized Cu-Mn-Ni rich precipitates (CRPs) and sub-nanometer matrix features, thought to be vacancy-solute cluster complexes (VSC). However, questions exist regarding both the composition of the precipitates and the defect character and composition of the matrix features. We present results of positron annihilation spectroscopy (PAS) and small angle neutron scattering (SANS) characterization of irradiated and thermally aged Fe-Cu and Fe-Cu-Mn alloys. These complementary techniques provide insight into the composition and character of both types of nanoscale features. The SANS measurements indicate populations of CRPs and VSCs in both alloys. The CRPs are coarser in the Fe-Cu alloy and the number densities of CRP and VSC increase with the addition of Mn. The PAS involved measuring both the positron lifetimes and the Doppler broadened annihilation spectra in the high momentum region to provide elemental sensitivity at the annihilation site. The spectra in Fe-Cu-Mn specimens thermally aged to peak hardness at 450 C and irradiated at 288 C are nearly identical to elemental Cu. Positron lifetime and spectrum measurements in Fe-Cu specimens irradiated at 288 C clearly show the existence of long lifetime (∼500 ps) open volume defects, which also contain Cu. Thus the SANS and PAS provide a self-consistent picture of nanostructures composed of CRPs and VSCs and tend to discount high Fe concentrations in the CRPs

Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Sathiabama Thiru

2015-02-01

Full Text Available In-situ reflection high-energy electron diffraction (RHEED observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001 using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

Ferromagnetic (Ga,Mn)As layers and nanostructures: control of magnetic anisotropy by strain engineering

Energy Technology Data Exchange (ETDEWEB)

Wenisch, Jan

2008-07-01

This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution X-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter. (orig.)

A high performance quasi-solid-state supercapacitor based on CuMnO2 nanoparticles

Science.gov (United States)

Wang, Lu; Arif, Muhammad; Duan, Guorong; Chen, Shenming; Liu, Xiaoheng

2017-07-01

Mixed metal or transition metal oxides hold an unveiled potential as one of the most promising energy storage material because of their excellent stability, reliable conductivity, and convenient use. In this work, CuMnO2 nanoparticles are successfully prepared by a facile hydrothermal process with the help of dispersing agent cetyltrimethylammonium bromide (CTAB). CuMnO2 nanoparticles possess a uniform quadrilateral shape, small size (approximately 25 × 25 nm-35 × 35 nm), excellent dispersity, and large specific surface specific (56.9 m2 g-1) with an interparticle mesoporous structure. All these characteristics can bring benefit for their application in supercapacitor. A quasi-solid-state symmetric supercapacitor device is assembled by using CuMnO2 nanoparticles as both positive electrode and negative electrode. The device exhibits good supercapacitive performance with a high specific capacitance (272 F g-1), a maximum power density of 7.56 kW kg-1 and a superior cycling stability of 18,000 continuous cycles, indicating an excellent potential to be used in energy storage device.

Local structure in (MnS)2x(CuInS2)1-x alloys

International Nuclear Information System (INIS)

Pietnoczka, A.; Bacewicz, R.; Schorr, S.

2006-01-01

Local structure around Mn atoms in (MnS) 2x (CuInS 2 ) 1-x alloys for x≤0.09 has been determined using near-edge and extended X-ray absorption fine structure (XANES and EXAFS) measured at the Mn K-edge. We found that for the Mn concentration up to 9 at% Mn atoms substitute preferentially for indium in the chalcopyrite lattice. The Mn-S bond length is 2.43±0.015 Aa, and is about 2% shorter than the In-S bond length. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Mechanisms controlling Cu, Fe, Mn, and Co profiles in peat of the Filson Creek Fen, northeastern Minnesota

Science.gov (United States)

Walton-Day, K.; Filipek, L.H.; Papp, C.S.E.

1990-01-01

Filson Creek Fen, located in northeastern Minnesota, overlies a Cu-Ni sulfide deposit. A site in the fen was studied to evaluate the hydrogeochemical mechanisms governing the development of Fe, Mn, Co, and Cu profiles in the peat. At the study site, surface peat approximately 1 m thick is separated from the underlying mineralized bedrock by a 6-12 m thickness of lake and glaciofluvial sediments and till. Concentrations of Fe, Mn, Co, and Cu in peat and major elements in pore water delineate a shallow, relatively oxidized, Cu-rich zone overlying a deeper, reduced, Fe-, Mn-, and Co-rich zone within the peat. Sequential metal extractions from peat samples reveal that 40-55% of the Cu in the shallow zone is associated with organic material, whereas the remaining Cu is distributed between iron-oxide, sulfide, and residual fractions. Sixty to seventy percent of the Fe, Mn, and Co concentrated in the deeper zone occur in the residual phase. The metal profiles and associations probably result from non-steady-state input of metals and detritus into the fen during formation of the peat column. The enrichment of organic-associated Cu in the upper, oxidized zone represents a combination of Cu transported into the fen with detrital plant fragments and soluble Cu, derived from weathering of outcrop and subcrop of the mineral deposit, transported into the fen, and fixed onto organic matter in the peat. The variable stratigraphy of the peat indicates that weathering processes and surface vegetation have changed through time in the fen. The Fe, Mn, and Co maxima at the base of the peat are associated with a maximum in detrital matter content of the peat resulting from a transition between the underlying inorganic sedimentary environment to an organic sedimentary environment. The chemistry of sediments and ground water collected beneath the peat indicate that mobilization of metals from sulfide minerals in the buried mineral deposit or glacial deposits is minimal. Therefore, the

Cu{sub 1.5}Mn{sub 1.5}O{sub 4}-based ceramic spectrally selective coatings for efficient solar absorber applications

Energy Technology Data Exchange (ETDEWEB)

Ma, Pengjun [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Geng, Qingfen; Gao, Xianghu [Research & Development Center for Eco-material and Eco-chemistry, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Yang, Shengrong [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Liu, Gang, E-mail: gangliu@licp.cas.cn [Research & Development Center for Eco-material and Eco-chemistry, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

2016-08-05

Cu{sub 1.5}Mn{sub 1.5}O{sub 4}-based ceramic spectrally selective (CSS) coating was deposited on aluminum substrate using a sol–gel dip-coating method. The citric acid introduced in the precursor system lowered the required calcining temperature of crystalline Cu{sub 1.5}Mn{sub 1.5}O{sub 4}. X-Ray diffraction (XRD) peaks of coatings annealed above 450 °C were found to coincide exactly with that of crystalline Cu{sub 1.5}Mn{sub 1.5}O{sub 4} in JCPDS database. By optimizing the withdrawal rate and calcining temperature, coating with spectral selectivity as good as α{sub s} = 0.876 and ε{sub 100} = 0.057 was achieved after only one dipping/annealing cycle. Subjected to an accelerated ageing test at 259 °C, the obtained CSS coating showed an excellent thermally durability with the performance criterion (PC) values below 0.05. - Highlights: • Cu{sub 1.5}Mn{sub 1.5}O{sub 4}-based CSS coating is achieved after only one dipping/annealing cycle. • Cu{sub 1.5}Mn{sub 1.5}O{sub 4} coating is obtained as the annealing temperature reaches to 450 °C. • Cu{sub 1.5}Mn{sub 1.5}O{sub 4} coating exhibits optical parameter: α{sub s} = 0.876 and ε{sub 100} = 0.057. • Cu{sub 1.5}Mn{sub 1.5}O{sub 4} coating shows the excellent stability in low to mid temperature region.

Location of Mn sites in ferromagnetic Ga.sub.1-x./sub.Mn.sub.x./sub. As studied by means of X-ray diffuse scattering holography

Czech Academy of Sciences Publication Activity Database

Kopecký, Miloš; Kub, Jiří; Bussetto, E.; Lausi, A.; Cukr, Miroslav; Novák, Vít; Olejník, Kamil; Wright, J.P.; Fábry, Jan

2006-01-01

Roč. 39, - (2006), s. 735-738 ISSN 0021-8898 R&D Projects: GA AV ČR IAA100100529; GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs ferromagnetic semiconductors * x-ray holography * diffuse scattering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.495, year: 2006

Influence of martensitic transformation on the magnetic transition in Ni-Mn-Ga

Energy Technology Data Exchange (ETDEWEB)

Kokorin, V.V. [Institute of Magnetism of NASU and MESU, Vernadsky blvd., 03680 Kyiv (Ukraine); Konoplyuk, S.M., E-mail: ksm@imag.kiev.ua [Institute of Magnetism of NASU and MESU, Vernadsky blvd., 03680 Kyiv (Ukraine); Dalinger, A.; Maier, H.J. [Institut für Werkstoffkunde (Materials Science), Leibnitz Universität Hannover, An der Universität 2, D-30823 Garbsen (Germany)

2017-06-15

Highlights: • The magnetic transition with temperature hysteresis occurs in Ni{sub 51.9}Mn{sub 27}Ga{sub 211}. • Its second-order character is confirmed by magnetic measurements. • The reason for this phenomenon lies in temperature dependence of lattice constant. - Abstract: The magnetic transition with a temperature hysteresis of about 7 K was observed in the martensitic phase of Ni{sub 51.9}Mn{sub 27}Ga{sub 211}. The measurements of AC magnetic susceptibility in constant magnetic fields up to 570 kA/m have proved its magnetic origin. The transport and caloric measurements were used to gain better understanding of the nature of this phenomenon. The variation of the martensite lattice parameters with temperature is suggested to account for the hysteresis of the magnetic transition.

An optimized In–CuGa metallic precursors for chalcopyrite thin films

Energy Technology Data Exchange (ETDEWEB)

Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

2013-10-31

We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

Efeitos da adição de átomos de Mn na rede do GaN via métodos de estrutura eletrônica Indirect effects of the Mn incorporation on the electronic structure of nanocrystalline GaN

Directory of Open Access Journals (Sweden)

Melânia Cristina Mazini

2010-01-01

Full Text Available A computational method to simulate the changes in the electronic structure of Ga1-xMn xN was performed in order to improve the understanding of the indirect contribution of Mn atoms. This periodic quantum-mechanical method is based on density functional theory at B3LYP level. The electronic structures are compared with experimental data of the absorption edge of the GaMnN. It was observed that the indirect influence of Mn through the structural parameters can account for the main part of the band gap variation for materials in the diluted regime (x<0.08, and is still significant for higher compositions (x~0.18.

Thermodynamic description of the Al-Cu-Mg-Mn-Si quinary system and its application to solidification simulation

International Nuclear Information System (INIS)

Chang, Keke; Liu, Shuhong; Zhao, Dongdong; Du, Yong; Zhou, Liangcai; Chen, Li

2011-01-01

By means of the first-principles calculations, the enthalpy of formation for the quaternary phase in the Al-Cu-Mg-Si system was computed. A set of self-consistent thermodynamic parameters for the Al-Cu-Mg-Si and Al-Cu-Mn-Si systems was then obtained using CALPHAD approach taking into account the reliable experimental data and the first-principles calculations. The thermodynamic database for the Al-Cu-Mg-Mn-Si system was developed based on the constituent binary, ternary, and quaternary systems. Comprehensive comparisons between the calculated and measured phase diagrams and invariant reactions showed that the experimental information was satisfactorily accounted for by the present thermodynamic description. The obtained database was used to describe the solidification behavior of Al alloys B319.1 (90.2Al-6Si-3.5Cu-0.3Mg, in wt.%) and B319.1 + xMn (x = 0.5-2, in wt.%) under Gulliver-Scheil non-equilibrium condition. The reliability of the present thermodynamic database was also verified by the good agreement between calculation and experiment for Gulliver-Scheil non-equilibrium solidification.

Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1-xMn xN

International Nuclear Information System (INIS)

Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Fenwick, William E.; Senawiratne, Jayantha; Song, Qing; Summers, Christopher J.; Zhang, Z. John; Dietz, Nikolaus; Ferguson, Ian T.

2006-01-01

Recent theoretical work for Ga 1-x Mn x N predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga 1-x Mn x N is still controversial, as there are conflicting experimental reports owing to the disparity in crystalline quality and phase purity of Ga 1-x Mn x N produced by different methods. In this work, metal-organic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga 1-x Mn x N of varying thickness and manganese doping levels using Cp 2 Mn as the Mn source. Crystalline quality and phase purity were determined by high-resolution X-ray diffraction, indicating that no macroscopic second phases are formed. Atomic force microscopy revealed MOCVD-like step flow growth patterns and a mean surface roughness of 0.378 nm in optimally grown films, which is close to that from the as-grown template layer of 0.330 nm. No change in the growth mechanism and morphology with Mn incorporation is observed. A uniform Mn concentration in the epitaxial layers is confirmed by secondary ion mass spectroscopy. SQUID measurements showed an apparent room temperature ferromagnetic hysteresis with saturation magnetizations of over 2 μ B /Mn at x = 0.008, which decreases with increasing Mn incorporation. Upon high-temperature annealing, numerous changes are observed in these properties, including an increase in surface roughness due to surface decomposition and a large decrease in the magnetic signature. A similar decrease in the magnetic signature is observed upon co-doping with the shallow donor silicon during the growth process. These results demonstrate the critical importance of controlling the Fermi level relative to the Mn 2+/3+ acceptor level in Ga 1-x Mn x N in order to achieve strong ferromagnetism

Composition-dependent nanostructure of Cu(In,Ga)Se{sub 2} powders and thin films

Energy Technology Data Exchange (ETDEWEB)

Schnohr, C.S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Kämmer, H.; Steinbach, T.; Gnauck, M. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, T.; Kaufmann, C.A.; Stephan, C. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Schorr, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

2015-05-01

Atomic-scale structural parameters of Cu(In,Ga)Se{sub 2} powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. - Highlights: • Cu(In,Ga)Se{sub 2} powders and thin films are studied with X-ray absorption spectroscopy. • Structural parameters are determined as a function of the In and Cu contents. • The element-specific average bond lengths are identical for powders and thin films. • The Ga-Se/In-Se bond length variation is smaller for thin films than for powders. • The differences are believed to stem from the different history of the Cu content.

Ab initio studies on electronic and magnetic properties of X2PtGa (X=Cr, Mn, Fe, Co) Heusler alloys

International Nuclear Information System (INIS)

Roy, Tufan; Chakrabarti, Aparna

2017-01-01

Using first-principles calculations based on density functional theory, we probe the electronic and magnetic properties of X 2 PtGa (X being Cr, Mn, Fe, Co) Heusler alloys. Our calculations predict that all these systems possess inverse Heusler alloy structure in the respective ground states. Application of tetragonal distortion leads to lowering of energy with respect to their cubic phase. The equilibrium volumes of both the phases are nearly the same. These indicate that the materials studied here are prone to undergo martensite transition, as has been recently shown theoretically for Mn 2 PtGa in the literature. Ground state with a tetragonal symmetry is corroborated by the observation of soft tetragonal shear constants in the cubic phase. By comparing the energies of various types of magnetic configurations we predict that Cr 2 PtGa and Mn 2 PtGa possess ferrimagnetic configuration whereas Fe 2 PtGa and Co 2 PtGa possess ferromagnetic configuration in their respective ground states. - Highlights: • We predict stable martensitic phase of X 2 PtGa (X=Cr, Mn, Fe, Co). • Co 2 PtGa possesses least inherent brittleness among all the materials. • Martensite transitions are possible for the investigated materials. • A tetragonal ground state with high spin polarization is predicted for Co 2 PtGa.

General synthesis of hierarchical C/MOx@MnO2 (M=Mn, Cu, Co) composite nanofibers for high-performance supercapacitor electrodes.

Science.gov (United States)

Nie, Guangdi; Lu, Xiaofeng; Chi, Maoqiang; Gao, Mu; Wang, Ce

2018-01-01

Improving the conductivity and specific surface area of electrospun carbon nanofibers (CNFs) is beneficial to a rapid realization of their applications in energy storage field. Here, a series of one-dimensional C/MO x (M=Mn, Cu, Co) nanostructures are first prepared by a simple two-step process consisting of electrospinning and thermal treatment. The presence of low-valence MO x enhances the porosity and conductivity of nanocomposites to some extent through expanding graphitic domains or mixing metallic Cu into the CNF substrates. Next, the C/MO x frameworks are coated with MnO 2 nanosheets/nanowhiskers (C/MO x @MnO 2 ), during which process the low-valence MO x can partly reduce KMnO 4 so as to mitigate the consumption of CNFs. When used as active materials for supercapacitor electrodes, the obtained C/MO x @MnO 2 exhibit excellent electrochemical performances in comparison with the common CNFs@MnO 2 (CM) core-shell electrode due to the combination of desired functions of the individual components and the introduction of extra synergistic effect. It is believed that these results will provide an alternative way to further increase the capacitive properties of CNFs- or metal oxide-based nanomaterials and potentially stimulate the investigation on other kinds of C/MO x composite nanostructures for various applications. Copyright © 2017 Elsevier Inc. All rights reserved.

Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films

Energy Technology Data Exchange (ETDEWEB)

Kurdyukov, D. A., E-mail: kurd@gvg.ioffe.ru; Shishkin, I. I.; Grudinkin, S. A.; Sitnikova, A. A.; Zamoryanskaya, M. V.; Golubev, V. G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2015-05-15

A film-type 3D-ordered macroporous GaN-ZnS:Mn nanocomposite with the structure of an inverted opal is fabricated. Structural studies of the nanocomposite are performed, and it is shown that GaN and ZnS:Mn introduced into the pores of the silica opal are nanocrystallites misoriented with respect to each other. It is shown that the nanocomposite is a structurally perfect 3D photonic crystal. The efficiency of using a buffer of GaN crystallites to preclude interaction between the surface of the spherical a-SiO{sub 2} particles forming the opal matrix and chemically active substances introduced into the pores is demonstrated.

Controlled facile synthesis of hierarchical CuO@MnO{sub 2} core–shell nanosheet arrays for high-performance lithium-ion battery

Energy Technology Data Exchange (ETDEWEB)

Chen, Qing; Heng, Bojun; Wang, Hai; Sun, Daming; Wang, Bixiao; Sun, Miao; Guan, Shunli; Fu, Ranyan; Tang, Yiwen, E-mail: ywtang@phy.ccnu.edu.cn

2015-08-25

Highlights: • We have facile synthesized the CuO@MnO{sub 2} nanosheet array directly on Cu substrate. • This core–shell structure was assembled as a full cell (vs LiCoO{sub 2}) for the first time. • The full cell exhibits a 127 mA h g{sup −1} at the 150 mA g{sup −1} after 100 cycle. • This strategy can be generalized to construct other hybrid nanostructures. - Abstract: We report a facile, rapid and low-cost two step approach to synthesize hierarchical CuO@MnO{sub 2} core–shell nanosheet arrays directly on Cu foil substrate. The as prepared CuO@MnO{sub 2} arrays can be directly used as integrated electrodes. Furthermore, the CuO@MnO{sub 2} nanosheet arrays were assembled with the commercial Li Ion Battery Cathode (LiCoO{sub 2}) as a full cell, which exhibited high capacity and good cycle stability (120 mA h g{sup −1} after 100 cycles at a rate of 150 mA g{sup −1}) and an excellent rate performance (a stable capacity of about 127 mA h g{sup −1} after 100 cycles of variable charging rate). The excellent performance of the CuO@MnO{sub 2} hybrids comes from their intelligent integration of the two compatible components into unique hierarchical architectures with a high specific capacity. Primary single-crystalline CuO nanosheet arrays directly grown on Cu substrates allow for efficient electrical and ionic transport. The secondary MnO{sub 2} shell provide enhanced surface area and high theoretical Li{sup +} storage capacity, and can also serve as volume spacers between neighboring CuO nanosheet arrays to maintain electrolyte penetration as well as reduce the aggregation during Li{sup +} intercalation, thus leading to improved electrochemical energy storage performance.

Interplay of phase sequence and electronic structure in the modulated martensites of Mn2NiGa from first-principles calculations

Science.gov (United States)

Kundu, Ashis; Gruner, Markus E.; Siewert, Mario; Hucht, Alfred; Entel, Peter; Ghosh, Subhradip

2017-08-01

We investigate the relative stability, structural properties, and electronic structure of various modulated martensites of the magnetic shape memory alloy Mn2NiGa by means of density functional theory. We observe that the instability in the high-temperature cubic structure first drives the system to a structure where modulation shuffles with a period of six atomic planes are taken into account. The driving mechanism for this instability is found to be the nesting of the minority band Fermi surface, in a similar way to that established for the prototype system Ni2MnGa . In agreement with experiments, we find 14M modulated structures with orthorhombic and monoclinic symmetries having energies lower than other modulated phases with the same symmetry. In addition, we also find energetically favorable 10M modulated structures which have not been observed experimentally for this system yet. The relative stability of various martensites is explained in terms of changes in the electronic structures near the Fermi level, affected mostly by the hybridization of Ni and Mn states. Our results indicate that the maximum achievable magnetic field-induced strain in Mn2NiGa would be larger than in Ni2MnGa . However, the energy costs for creating nanoscale adaptive twin boundaries are found to be one order of magnitude higher than that in Ni2MnGa .

Optical Orientation of Mn2+ Ions in GaAs in Weak Longitudinal Magnetic Fields

Science.gov (United States)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

2011-04-01

We report on optical orientation of Mn2+ ions in bulk GaAs subject to weak longitudinal magnetic fields (B≤100mT). A manganese spin polarization of 25% is directly evaluated by using spin-flip Raman scattering. The dynamical Mn2+ polarization occurs due to the s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence reveals a nontrivial electron spin dynamics, where the oriented Mn2+ ions tend to stabilize the electron spins.

Structure, magnetism, and electron-transport properties of Mn2CrGa-based nanomaterials

Directory of Open Access Journals (Sweden)

Wenyong Zhang

2016-05-01

Full Text Available Mn2CrGa in the disordered cubic structure has been synthesized using rapid quenching and subsequent annealing. The cubic phase transforms to a stable tetragonal phase when a fraction of Cr or Ga is replaced by Pt or Al, respectively. All samples are ferrimagnetic with high Curie temperatures (Tc; Mn2CrGa exhibits the highest Tc of about 813 K. The tetragonal samples have appreciable values of magnetocrystalline anisotropy energy, which leads to an increase in coercivity (Hc that approaches about 10 kOe in the Pt-doped sample. The Hc linearly increases with a decrease of temperature, concomitant with the anisotropy change with temperature. All samples are metallic and show negative magnetoresistance with room-temperature resistivities on the order of 1 mΩcm. The magnetic properties including high Tc and low magnetic moment suggest that these tetragonal materials have potential for spin-transfer-torque-based devices.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

International Nuclear Information System (INIS)

Tanaka, Katsu; Okamoto, Shinji

2009-01-01

This paper reports the first observation of red electroluminescence (EL) in SrGa 2 S 4 :Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa 2 S 4 :Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn 2+ ions to cause the red EL.

Effect of P-anion codoping on the Curie temperature of GaMnAs diluted magnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Bouzerar, R.; Máca, František; Kudrnovský, Josef; Bergqvist, L.

2010-01-01

Roč. 82, č. 3 (2010), 035207/1-035207/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/09/0775; GA ČR(CZ) GC202/07/J047 Institutional research plan: CEZ:AV0Z10100520 Keywords : GaMnAs * calculations * Curie temperature * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

Development of half metallicity within mixed magnetic phase of Cu1‑x Co x MnSb alloy

Science.gov (United States)

Bandyopadhyay, Abhisek; Neogi, Swarup Kumar; Paul, Atanu; Meneghini, Carlo; Bandyopadhyay, Sudipta; Dasgupta, Indra; Ray, Sugata

2018-05-01

Cubic half-Heusler Cu1‑x Co x MnSb () compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic antiferromagnetism. The systems (Cu,Co)MnSb are of particular interest as the end member alloys CuMnSb and CoMnSb are semi metallic (SM) antiferromagnetic (AFM) and half metallic (HM) ferromagnetic (FM), respectively. Clearly, Co-doping at the Cu-site of CuMnSb introduces changes in the carrier concentration at the Fermi level that may lead to half metallic ground state but there remains a persistent controversy whether the AFM to FM transition occurs simultaneously. Our experimental results reveal that the AFM to FM magnetic transition occurs through a percolation mechanism where Co-substitution gradually suppresses the AFM phase and forces FM polarization around every dopant cobalt. As a result a mixed magnetic phase is realized within this composition range while a nearly HM band structure is developed already at the 10% Co-doping. Absence of T 2 dependence in the resistivity variation at low T-region serves as an indirect proof of opening up an energy gap at the Fermi surface in one of the spin channels. This is further corroborated by the ab initio electronic structure calculations that suggests that a nearly ferromagnetic half-metallic ground state is stabilized by Sb-p holes produced upon Co doping.

Fundamental optical absorption edge in MnGa2Te4 single crystals

International Nuclear Information System (INIS)

Medvedkin, G.A.; Rud, Yu.V.; Tairov, M.A.

1988-01-01

A study is made of the optical properties of oriented MnGa 2 Te 4 crystals in the region of the fundamental absorption edge. The energy gap width for the temperatures 77, 300, and 370 K is determined to be E G = 1.635, 1.52, and 1.50 eV. The spectral response α(ℎω/2π) is found to follow Urbach's rule thoughout the temperature range studied, the slope of the absorption edge remaining constant (α = 10 2 cm -1 ). Crystal annealing with subsequent rapid cooling results in a shift of the absorption edge longward by 25 meV with the exponential form of α(ℎω/2π) prevailing over the range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be a sum of the effects coming from the density-of-states tails, local scattering centers associated with a high vacancy concentration, and electron-phonon interaction. Optical linear dichroism of the absorption edge of MnGa 2 Te 4 single crystals with pseudotetragonal structure is revealed and studied. The single crystals are established to be optically uniaxial, their optical transmission dichroism being negative. It is shown that the minimal direct optical transitions in MnGa 2 Te 4 are allowed in the E parallel c polarization in the temperature range 77 to 370 K, the crystal-field splitting of the valence band increasing with temperature. (author)

Twin relationships of 5M modulated martensite in Ni-Mn-Ga alloy

International Nuclear Information System (INIS)

Li Zongbin; Zhang Yudong; Esling, Claude; Zhao Xiang; Zuo Liang

2011-01-01

Highlights: → We determine orientation relationships of 5M modulated martensite in NiMnGa alloy. → Accurate EBSD mapping is performed using monoclinic superstructure. → Four distinct variants mutually twin-related to each other are revealed. → Three twinning types and full twinning elements are identified. → Twin interfaces do coincide with respective twinning planes. - Abstract: For Ni-Mn-Ga ferromagnetic shape memory alloys, the characteristic features of modulated martensite (including the number/shape of constituent variants, the inter-variant orientation relationship and the geometrical distribution of variant interfaces) determine the attainability of the shape memory effect. In the present work, a comprehensive microstructural and crystallographic investigation has been conducted on a bulk polycrystalline Ni 50 Mn 28 Ga 22 alloy. As a first attempt, the orientation measurements by electron backscatter diffraction (EBSD) - using the precise information on the commensurate 5M modulated monoclinic superstructure (instead of the conventionally simplified non-modulated tetragonal structure) - were successfully performed to identify the crystallographic orientations on an individual basis. Consequently, the morphology of modulated martensite, the orientation relationships between adjacent variants and the characters of twin interfaces were unambiguously determined. With the thus-obtained full-featured image on the configuration of martensitic variants, the possibility of microstructural modification by proper mechanical 'training' was further discussed. This new effort makes it feasible to explore the crystallographic/microstructural correlations in modulated martensite with high statistical reliability, which in turn provides useful guidance for optimizing the microstructure and shape memory performance.

Investigation of the crystallographic structure of hydrogenated (Ga,Mn)As

Energy Technology Data Exchange (ETDEWEB)

Bihler, Christoph; Huebl, Hans; Galler, Bastian; Brandt, Martin [Walter Schottky Institut, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Martinez-Criado, Gema; Ciatto, Gianluca [ESRF, 6 rue J. Horowitz, Boite Postale 220, 38043 Grenoble (France); Bonapasta, Aldo Amore; Filippone, Francesco [ISM, Via Salaria, CP 10, 00016 Monterotondo Stazione (Italy); Schoch, Wladimir; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

2007-07-01

The lattice expansion of (Ga,Mn)As samples after deuteration {lambda}V{sub D}/V{sub Mn-As}Mn and a neighboring As atom, but the difference to the volume expansion expected for the antibonding (AB) configuration is too small to draw unambiguous conclusions. However, the absence of a second peak or shoulder in the Fourier transform of the Mn K-edge extended X-ray absorption fine structure (EXAFS) {chi} function corresponding to the first coordination shell of deuterated samples, as well as the comparison of the corresponding X-ray absorption near edge structure (XANES) with simulations of the different complexes strongly suggests that the BC complex predicted by theoretical calculations can be excluded in the deuterated samples. Rather, both EXAFS and XANES spectra can be explained by the formation of AB complexes or complexes in which the D atom is not bound to a nearest As neighbor, but a more distant As atom.

Kinetics of bainite precipitation in the Cu{sub 69.3}Al{sub 18.8}Mn{sub 10.3}Ag{sub 1.6} alloy

Energy Technology Data Exchange (ETDEWEB)

Motta, M.B.J.L. [Departamento de Ciências Exatas e da Terra, UNIFESP, Diadema, SP (Brazil); Adorno, A.T.; Santos, C.M.A. [Departamento de Físico-Química, IQ-UNESP, Araraquara, SP (Brazil); Silva, R.A.G., E-mail: galdino.ricardo@gmail.com [Departamento de Ciências Exatas e da Terra, UNIFESP, Diadema, SP (Brazil)

2017-02-15

In this work the kinetics of bainite precipitation in the Cu{sub 69.3}Al{sub 18.8}Mn{sub 10.3}Ag{sub 1.6} alloy was studied using measurements of microhardness change with aging time, scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analyses, measurements of magnetization change with applied field and high-resolution transmission electron microscopy (HRTEM). The results showed that the bainite precipitation is responsible for the hardness increase in the Cu{sub 69.3}Al{sub 18.8}Mn{sub 10.3}Ag{sub 1.6} alloy. The activation energy value obtained for the bainite precipitation is lower than that found in the literature. This was attributed to the presence of Ag dissolved in matrix and the occurrence of the Cu{sub 3}Al(DO{sub 3}) → Cu{sub 2}AlMn(L2{sub 1}) ordering reaction together with the bainite precipitation. - Highlights: • The activation energy for the bainite precipitation in the Cu{sub 69.3}Al{sub 18.8}Mn{sub 10.3}Ag{sub 1.6} alloy is around 33 kJ/mol. • During bainite precipitation the Cu{sub 2}AlMn phase formation occurs. • The Cu{sub 3}Al(DO{sub 3}) → Cu{sub 2}AlMn(L2{sub 1}) ordering reaction interferes in the activation energy value.

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

Science.gov (United States)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

2017-07-01

We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

Secondary ordering in ternary alloy CuMnPt6

International Nuclear Information System (INIS)

Takahashi, Miwako; Das, Ananda Kumar; Nakamura, Reo; Ohshima, Ken-ichi; Iwasaki, Hiroshi; Shishido, Toetsu

2006-01-01

Using the pulsed-neutron diffraction technique, we performed in situ measurements of structural ordering in the ternary alloy CuMnPt 6 . The diffraction patterns at various temperatures give a direct observation of a double-step ordering: disorder to Cu 3 Au type order as an ordering within the fundamental face-centered cubic lattice to subdivide the lattice into two sublattices formed by face-centered sites (first sublattice) and corner sites (second sublattice) at 968degC; and Cu 3 Au type order to ABC 6 type order as an ordering within the second to subdivide the lattice further into two sublattices formed by alternating (111) planes at 746degC. The order parameters for the ABC 6 type structure experimentally estimated by the method of static concentration waves indicate that the primary ordering developed almost completely, but the secondary ordering remained incomplete. (author)

Synthesis, Magnetization, and Electrical Transport Properties of Mn3Zn0.9Cu0.1N

Directory of Open Access Journals (Sweden)

Y. Yin

2013-01-01

Full Text Available We synthesized Mn3Zn0.9Cu0.1N by solid state reaction, and magnetic as well as electrical transport properties were investigated. It is found that Mn3Zn0.9Cu0.1N exhibits a first-order antiferromagnetism (AFM to paramagnetic (PM transition with the Néel temperature TN ~163 K, and substitution of Cu for Zn would favor ferromagnetism (FM state and weaken AFM ground state, leading to a convex curvature character of M(T curve. With high external fields 10 kOe–50 kOe, magnetic transition remains a robust AFM-PM feature while FM phase is completely suppressed. Thermal hysteresis of M(T under 500 Oe is also suppressed when the magnetic field exceeds 10 kOe. Mn3Zn0.9Cu0.1N exhibits a good metallic behavior except for a slope change around TN, which is closely related to AFM-PM magnetic transition. Compared with the first differential of resistivity with respect to temperature for (dρ/dTMn3ZnN in transition temperature range, the absolute value of (dρ/dTMn3Zn0.9Cu0.1N is much lower which is close to zero.

Different microstructures of mobile twin boundaries in 10 M modulated Ni-Mn-Ga martensite

Czech Academy of Sciences Publication Activity Database

Heczko, Oleg; Straka, L.; Seiner, Hanuš

2013-01-01

Roč. 61, č. 2 (2013), 622-631 ISSN 1359-6454 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391 Institutional support: RVO:68378271 ; RVO:61388998 Keywords : martensitic twin microstructure * twinning interfaces * Ni-Mn-Ga martensite * mobility of twin boundary * magnetic shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.940, year: 2013 http://www.sciencedirect.com/science/article/pii/S135964541200732X

YBCO/manganite layered structures on NdGaO3 substrates

International Nuclear Information System (INIS)

Nurgaliev, T; Blagoev, B; Donchev, T; Miteva, S; Mozhaev, P B; Mozhaeva, J E; Ovsyannikov, G A; Kotelyanskii, I M; Jacobsen, C

2006-01-01

Results of deposition of YBa 2 Cu 3 O 7-x /CeO 2 /(La 0.7 Ca 0.3 MnO 3 or La 0.7 Sr 0.3 MnO 3 ) structures on the standard oriented and tilted ( 8 0 ) NdGaO 3 substrates and results of investigation of electrical parameters of YBa 2 Cu 3 O 7-x (YBCO) films in such structures are presented. The YBCO component of the structure exhibits lower value of the critical parameters in comparison with those of single YBCO films. The contribution of the magnetic layer to the microwave losses of the YBCO film in the layered structure is evaluated

Determination of Proton Relaxivities of Mn(II, Cu(II and Cr(III added to Solutions of Serum Proteins

Directory of Open Access Journals (Sweden)

Ali Yilmaz

2009-04-01

Full Text Available Relaxometric studies are still of scientific interest due to their use in medicine and biology. In this study, proton T1 and T2 relaxivities of Mn(II, Cu(II and Cr(III in water were determined in the presence and absence of various proteins (albumin, α-globulin, γ-globulin, lysozyme, fibrinogen. The 1/T1 and 1/T2 in all solutions are linearly proportional to the concentration of the paramagnetic ions. Mn(II has the great influence to alter relaxations in all protein solutions, while Cu(II and Cr(III have a poor influence on the relaxations. In addition, Mn(II and Cu(II are bound to each protein, but Cr(III is not bound to any protein.

Anomalous superconducting spin-valve effect in NbN/FeN/Cu/FeN/FeMn multilayers

Energy Technology Data Exchange (ETDEWEB)

Hwang, Tae Jong; Kim, Dong Ho [Yeungnam University, Gyeongsan (Korea, Republic of)

2017-09-15

We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

Ab initio studies on electronic and magnetic properties of X{sub 2}PtGa (X=Cr, Mn, Fe, Co) Heusler alloys

Energy Technology Data Exchange (ETDEWEB)

Roy, Tufan, E-mail: aparnachakrabarti@gmail.com [Homi Bhaba National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094 (India); Chakrabarti, Aparna [Homi Bhaba National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2017-02-01

Using first-principles calculations based on density functional theory, we probe the electronic and magnetic properties of X{sub 2}PtGa (X being Cr, Mn, Fe, Co) Heusler alloys. Our calculations predict that all these systems possess inverse Heusler alloy structure in the respective ground states. Application of tetragonal distortion leads to lowering of energy with respect to their cubic phase. The equilibrium volumes of both the phases are nearly the same. These indicate that the materials studied here are prone to undergo martensite transition, as has been recently shown theoretically for Mn{sub 2}PtGa in the literature. Ground state with a tetragonal symmetry is corroborated by the observation of soft tetragonal shear constants in the cubic phase. By comparing the energies of various types of magnetic configurations we predict that Cr{sub 2}PtGa and Mn{sub 2}PtGa possess ferrimagnetic configuration whereas Fe{sub 2}PtGa and Co{sub 2}PtGa possess ferromagnetic configuration in their respective ground states. - Highlights: • We predict stable martensitic phase of X{sub 2}PtGa (X=Cr, Mn, Fe, Co). • Co{sub 2}PtGa possesses least inherent brittleness among all the materials. • Martensite transitions are possible for the investigated materials. • A tetragonal ground state with high spin polarization is predicted for Co{sub 2}PtGa.

Determination of Mn, Fe, and Cu in chemically-treated wood pulps by the XRF addition method

Energy Technology Data Exchange (ETDEWEB)

Raemoe, J.; Klasila, T.; Piepponen, S. [VTT Chemical Technology (Finland); Sillanpaeae, M. [Oulu Univ. (Finland)

2001-08-01

A rapid X-ray fluorescence addition method has been developed for quantification of the technically most important metals in wood pulp matrix (Mn, Fe, and Cu). Pretreatment consisted of just two steps: first, acid was added to the sample to achieve homogeneous distribution of the metals; the pulp was then pressed lightly on to Mylar film. Total analysis time was less than 10 min. The concentration range investigated was up to 15 mg kg{sup -1} for Mn and up to 5 mg kg{sup -1} for Fe and Cu. Metal concentrations in Scandinavian pulps are not expected to exceed these amounts. The quantification limit was 2 mg kg{sup -1} for all three metals. The reproducibilities and repeatabilities were concentration-dependent and varied between 3 and 19% and between 1 and 17%, respectively. The squares of the linear correlation coefficients between measured intensity and added metal concentration were 0.994, 0.950, and 0.932 for Mn, Fe, and Cu, respectively. (orig.)

Ecological modelling of a wetland for phytoremediating Cu, Zn and Mn in a gold–copper mine site using Typha domingensis (Poales: Typhaceae near Orange, NSW, Australia

Directory of Open Access Journals (Sweden)

Subrahmanyam Sreenath

2017-12-01

Full Text Available An artificial wetland was computationally modelled using STELLA®, a graphical programming tool for an Au-Cu mine site in Central-west NSW, the aim of which was to offer a predictive analysis of a proposed wetland for Cu, Zn and Mn removal using Typha domingensis as the agent. The model considers the important factors that impact phytoremediation of Cu, Zn and Mn. Simulations were performed to optimise the area of the wetland; concentration of Cu, Zn and Mn released from mine (AMD; and flow rates of water for maximum absorption of the metals. A scenario analysis indicates that at AMD = 0.75mg/L for Cu, Zn and Mn, 12.5, 8.6, and 357.9 kg of Cu, Zn and Mn, respectively, will be assimilated by the wetland in 35 years, which would be equivalent to 61 mg of Cu/kg, 70 mg of Zn/kg and 2,886 mg of Mn/kg of T. domingensis, respectively. However, should Cu, Zn and Mn in AMD increase to 3 mg/L, then 18.6 kg of Cu and 11.8 kg of Zn, respectively, will be assimilated in 35 years, whereas no substantial increase in absorption for Mn would occur. This indicates that 91 mg of Cu, 96 mg of Zn and 2917 mg of Mn will be assimilated for every kg of T. domingensis in the wetland. The best option for Cu storage would be to construct a wetland of 50,000 m2 area (AMD = 0.367 mg/L of Cu, which would capture 14.1 kg of Cu in 43 years, eventually releasing only 3.9 kg of Cu downstream. Simulations performed for a WA of 30,000 m2 indicate that for AMD = 0.367 mg/L of Zn, the wetland captures 6.2 kg, releasing only 3.5 kg downstream after 43 years; the concentration of Zn in the leachate would be 10.2 kg, making this the most efficient wetland amongst the options considered for phytoremediating Zn. This work will help mine managers and environmental researchers in developing an effective environmental management plan by focusing on phytoremediation, with a view at extracting Cu, Zn and Mn from the contaminated sites.

Cathodoluminescence and Thermoluminescence of Undoped LTB and LTB:A (A = Cu, Ag, Mn)

Science.gov (United States)

2013-03-01

and Mn Ions for Nonlinear Applications.” Acta Physica Polonica A 107, no. 3 (2005): 507-518. [22] Kimball Physics, Inc.. Operator’s Manual: EMG...CATHODOLUMINESCENCE AND THERMOLUMINESCENCE OF UNDOPED LTB AND LTB:A ( A = Cu, Ag, Mn) THESIS Zachary L. Hadfield, USA AFIT-ENP-13-M-13...STATEMENT A . APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED The views expressed in this thesis are those of the author and

Magnetocaloric behavior of Mn rich Ni46Cu2Mn43In11 alloy

Science.gov (United States)

Ray, Mayukh K.; Obaidat, I. M.; Banerjee, Sangam

2018-02-01

In this work, we studied the magnetic entropy change (ΔSM) across the martensite transformation (MT) in Mn-rich Ni46Cu2Mn43ln11 alloy. This compound undergoes a MT and a magnetic phase transition around the temperatures (TM=) 272 K and (TCA=) 325 K, respectively. A large field induced shift (=0.28 K/kOe) of the MT temperatures is observed. An application of magnetic field (H =) of 50 kOe causes a large ΔSM of 20 J/kg-K and -4.4 J/kg-K around TM and TCA, respectively. We also found that the change in magnetic field induced isothermal ΔSM(H)T is mainly depends on the induced austenite phase fraction by the applied magnetic field at that temperature. Possible reasons for the observed behaviours are comprehensively discussed.

Evaporación de Cu(In,GaSe2 en lámina delgada para aplicaciones fotovoltaicas

Directory of Open Access Journals (Sweden)

Guillén, C.

2004-04-01

Full Text Available The aim of this work is to study the structural and optical properties of Cu(In,GaSe2 (CIGS thin films after thermal and chemical treatments. Cu(In,GaSe2 thin films have been obtained by means of the selenization in vacuum or Ar of the metallic precursors evaporated sequentially. The sequence of evaporation was In/Ga/Cu/In. Single-phase chalcopyrite and polycrystalline CIGS films with (112 preferred orientation were obtained. An improvement in the crystallite feature and optical properties is observed after Ar selenization. Band gap energies, Eg, between 0.98 and 1.10 were obtained for different atomic ratios, being dominated by the Ga content. Thin films high absorption coefficient was reduced in band tails, specially when Cu content increases after chemical treatment in KCN.El objetivo de este trabajo es estudiar las propiedades estructurales y ópticas del Cu(In,GaSe2 (CIGS en lámina delgada tras diferentes tratamientos térmicos y químicos. El Cu(In,GaSe2 se ha obtenido mediante la selenización en vacío o Ar de los precursores metálicos evaporados secuencialmente. La secuencia de evaporación seguida fue In/Ga/Cu/In. Se obtuvieron láminas policristalinas de CIGS con estructura calcopirita fuertemente orientada en la dirección (112. Se observó una mejora de la naturaleza cristalina y de las propiedades ópticas tras la selenización en Ar. Se obtuvieron energías de banda prohibida, Eg, entre 0.98 y 1.10 eV para las diferentes relaciones atómicas, estando dominadas por el contenido de Ga. Se consiguió reducir la alta absorción por colas de banda de las láminas delgadas, especialmente cuando aumentaba el contenido de Cu, tras un tratamiento químico en KCN.

Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

KAUST Repository

Barbe, Jeremy

2016-12-13

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

Influence of Homogenization on Microstructural Response and Mechanical Property of Al-Cu-Mn Alloy.

Science.gov (United States)

Wang, Jian; Lu, Yalin; Zhou, Dongshuai; Sun, Lingyan; Li, Renxing; Xu, Wenting

2018-05-29

The evolution of the microstructures and properties of large direct chill (DC)-cast Al-Cu-Mn alloy ingots during homogenization was investigated. The results revealed that the Al-Cu-Mn alloy ingots had severe microsegregation and the main secondary phase was Al₂Cu, with minimal Al₇Cu₂Fe phase. Numerous primary eutectic phases existed in the grain boundary and the main elements were segregated at the interfaces along the interdendritic region. The grain boundaries became discontinuous, residual phases were effectively dissolved into the matrix, and the segregation degree of all elements was reduced dramatically during homogenization. In addition, the homogenized alloys exhibited improved microstructures with finer grain size, higher number density of dislocation networks, higher density of uniformly distributed θ' or θ phase (Al₂Cu), and higher volume fraction of high-angle grain boundaries compared to the nonhomogenized samples. After the optimal homogenization scheme treated at 535 °C for 10 h, the tensile strength and elongation% were about 24 MPa, 20.5 MPa, and 1.3% higher than those of the specimen without homogenization treatment.

Hydrogen storage properties of LaMgNi3.6M0.4 (M = Ni, Co, Mn, Cu, Al) alloys

International Nuclear Information System (INIS)

Yang, Tai; Zhai, Tingting; Yuan, Zeming; Bu, Wengang; Xu, Sheng; Zhang, Yanghuan

2014-01-01

Highlights: • La–Mg–Ni system AB 2 -type alloys were prepared by induction melting. • Structures and lattice parameters were analysed by XRD. • Hydrogen absorption/desorption performances were studied. • Mechanisms of hydrogen absorption capacity fading were investigated. - Abstract: LaMgNi 3.6 M 0.4 (M = Ni, Co, Mn, Cu, Al) alloys were prepared through induction melting process. The phase compositions and crystal structures were characterised via X-ray diffraction (XRD). The hydrogen storage properties, including activation performance, hydrogen absorption capacity, cycle stability, alloy particle pulverisation and plateau pressure, were systemically investigated. Results show that Ni, Co, Mn and Cu substitution alloys exhibit multiphase structures comprising the main phase LaMgNi 4 and the secondary phase LaNi 5 . However, the secondary phase of the Al substitution alloy changes into LaAlNi 4 . The lattice parameters and cell volumes of the LaMgNi 4 phase follow the order Ni < Co < Al < Cu < Mn. Activation is simplified through partial substitution of Ni with Al, Cu and Co. The hydrogen absorption capacities of all of the alloys are approximately 1.7 wt.% at the first activation process; however, they rapidly decrease with increasing cycle number. In addition, the stabilities of hydriding and dehydriding cycles decrease in the order Al > Co > Ni > Cu > Mn. Hydriding processes result in numerous cracks and amorphisation of the LaMgNi 4 phase in the alloys. The p–c isotherms were determined by a Sieverts-type apparatus. Two plateaus were observed for the Ni, Co and Al substitution alloys, whereas only one plateau was found for Mn and Cu. This result was caused by the amorphisation of the LaMgNi 4 phase during the hydriding cycles. Reversible absorption and desorption of hydrogen are difficult to achieve. Substitutions of Ni with Co, Mn, Cu and Al significantly influence the reduction of hysteresis between hydriding and dehydriding

Quantitative trait loci controlling Cu, Ca, Zn, Mn and Fe content in ...

Indian Academy of Sciences (India)

of essential minerals (such as Fe, Zn etc), breeding mineral- efficient crops that produce .... and seven digenic interactions were identified for Cu, Ca,. Zn, Mn and Fe, .... Eva P. 1993 Cadmium, copper and lead in wild rice from central. Canada.

Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

2007-07-01

Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

Fluorescence turn-on detection of alkaline phosphatase activity based on controlled release of PEI-capped Cu nanoclusters from MnO2 nanosheets.

Science.gov (United States)

Zhang, Yunyi; Li, Yongxin; Zhang, Cuiyun; Zhang, Qingfeng; Huang, Xinan; Yang, Meiding; Shahzad, Sohail Anjum; Lo, Kenneth Kam-Wing; Yu, Cong; Jiang, Shichun

2017-08-01

A fluorescence turn-on assay for alkaline phosphatase (ALP) activity is developed through the controlled release of polyethyleneimine-capped copper nanoclusters (PEI-capped CuNCs) from the MnO 2 nanosheets. In an aqueous solution, the positively charged PEI-capped CuNCs could be adsorbed onto the surface of the negatively charged MnO 2 nanosheets. Such adsorption through favorable electrostatic interactions could efficiently quench the nanocluster fluorescence emission via resonance energy transfer from the PEI-capped CuNCs to the MnO 2 nanosheets. 2-Phospho-L-ascorbic acid (AAP) could be hydrolyzed to L-ascorbic acid (AA) in the presence of ALP. AA could reduce MnO 2 into Mn 2+ and trigger the disintegration of the MnO 2 nanosheets. As a result, the CuNCs were released and the quenched fluorescence was recovered efficiently. The detection strategy is simple, inexpensive, sensitive, selective, with low toxicity, and has better biocompatibility. The newly fabricated biosensor for ALP activity will potentially make it a robust candidate for numerous biological and biomedical applications.

The micro-magnetic structures of Mn sup + ion-implanted GaSb

CERN Document Server

Zhang Fu Qiang; Liu Zhi Kai

2003-01-01

The micro-magnetic structures of Mn sup + ion-implanted GaSb are studied using a magnetic force microscope (MFM). MFM images reveal that there are many magnetic domains with different magnetization directions in our samples. The magnetic domain structures and the magnetization direction of typical MFM patterns are analyzed by numeric simulation. (author)

Optical anisotropy and domain structure of multiferroic Ni-Mn-Ga and Co-Ni-Ga Heusler-type alloys

International Nuclear Information System (INIS)

Ivanova, A I; Gasanov, O V; Kaplunova, E I; Grechishkin, R M; Kalimullina, E T; Zalyotov, A B

2015-01-01

A study is made of the reflectance anisotropy of martensitic and magnetic domains in ferromagnetic shape memory alloys (FSMA) Ni-Mn-Ga and Co-Ni-Ga. The reflectance of metallographic sections of these alloys was measured in the visible with the aid of standard inverted polarized light microscope with a 360° rotatable specimen stage. Calculations are presented for the estimation of image contrast values between neighboring martensite twins. Qualitative and quantitative observations and angular measurements in reflected polarized light proved to be useful for the analysis of specific features of the martensite microstructure of multiferroic materials

Distributions of dissolved trace metals (Cd, Cu, Mn, Pb, Ag in the southeastern Atlantic and the Southern Ocean

Directory of Open Access Journals (Sweden)

M. Boye

2012-08-01

Full Text Available Comprehensive synoptic datasets (surface water down to 4000 m of dissolved cadmium (Cd, copper (Cu, manganese (Mn, lead (Pb and silver (Ag are presented along a section between 34° S and 57° S in the southeastern Atlantic Ocean and the Southern Ocean to the south off South Africa. The vertical distributions of Cu and Ag display nutrient-like profiles similar to silicic acid, and of Cd similar to phosphate. The distribution of Mn shows a subsurface maximum in the oxygen minimum zone, whereas Pb concentrations are rather invariable with depth. Dry deposition of aerosols is thought to be an important source of Pb to surface waters close to South Africa, and dry deposition and snowfall may have been significant sources of Cu and Mn at the higher latitudes. Furthermore, the advection of water masses enriched in trace metals following contact with continental margins appeared to be an important source of trace elements to the surface, intermediate and deep waters in the southeastern Atlantic Ocean and the Antarctic Circumpolar Current. Hydrothermal inputs may have formed a source of trace metals to the deep waters over the Bouvet Triple Junction ridge crest, as suggested by relatively enhanced dissolved Mn concentrations. The biological utilization of Cu and Ag was proportional to that of silicic acid across the section, suggesting that diatoms formed an important control over the removal of Cu and Ag from surface waters. However, uptake by dino- and nano-flagellates may have influenced the distribution of Cu and Ag in the surface waters of the subtropical Atlantic domain. Cadmium correlated strongly with phosphate (P, yielding lower Cd / P ratios in the subtropical surface waters where phosphate concentrations were below 0.95 μM. The greater depletion of Cd relative to P observed in the Weddell Gyre compared to the Antarctic Circumpolar Current could be due to increase Cd uptake induced by iron-limiting conditions in these high

Magnetic anisotropy and anisotropic magnetoresistance of (Ga,Mn)As Layers on (113)A GaAs

Energy Technology Data Exchange (ETDEWEB)

Donhauser, Daniela; Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Rapp, Christoph; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

2009-07-01

We study the magnetic anisotropy and the anisotropic magnetoresistance of compressively strained (Ga,Mn)As films with various Mn concentrations, grown on (113)A-oriented GaAs substrates. High-resolution x-ray diffraction (HRXRD) studies reveal a monoclinic symmetry of the distorted (113)A layers in agreement with an explicit calculation of the strain tensor. Based on this result, general expressions for the resistivity tensor and the free energy of single-crystalline ferromagnets are derived from a series expansion with respect to the magnetization orientation, including terms up to the fourth order. With these expressions we are able to model the measured angular dependences of our magnetotransport data with the assumption of a single ferromagnetic domain model. In order to quantitatively derive the resistivity and anisotropy parameters the longitudinal and transverse resistivities are experimentally studied for magnetic fields rotated within the (113), (33 anti 2), and (anti 110) plane at various field strengths. It turned out that some of the resistivity parameters significantly depend on the strength of the external magnetic field. Furthermore we found that the layers exhibit a uniaxial anisotropy along the [001] crystallographic axis, which can be theoretically explained based on the explicit form of the strain tensor.

Magnetic anisotropy of nonmodulated Ni-Mn-Ga martensite revisited

Czech Academy of Sciences Publication Activity Database

Heczko, Oleg; Straka, L.; Novák, Václav; Fähler, S.

2010-01-01

Roč. 107, č. 9 (2010), 09A914/1-09A914/3 ISSN 0021-8979 Grant - others:AV ČR(CZ) M100100913 Institutional research plan: CEZ:AV0Z10100520 Keywords : magnetic anisotropy of non-modulated martensite * temperature dependence of anisotropy * Ni-Mn-Ga * adaptive martensite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.064, year: 2010 http://jap.aip.org/resource/1/japiau/v107/i9/p09A914_s1

Effect of Cu{sup 2+} and Ni{sup 2+} substitution at the Mn site in (La{sub 0.63}Ca{sub 0.37})MnO{sub 3}: A neutron powder diffraction investigation

Energy Technology Data Exchange (ETDEWEB)

Martinelli, A., E-mail: alberto.martinelli@spin.cnr.it [CNR-SPIN, C.so Perrone 24, 16152 Genova (Italy); Ferretti, M. [CNR-SPIN, C.so Perrone 24, 16152 Genova (Italy); Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy); Castellano, C. [Università degli Studi di Milano, Dipartimento di Chimica Strutturale e Stereochimica Inorganica, Via G. Venezian 21, 20133 Milano (Italy); Cimberle, M.R. [IMEM-CNR, Via Dodecaneso 33, 16146 Genova (Italy); Ritter, C. [Institute Laue—Langevin, 6 rue Jules Horowitz, 38042 Grenoble Cedex 9 (France)

2013-04-15

The crystal and magnetic structures of the (La{sub 0.63}Ca{sub 0.37})(Mn{sub 1−x}TM{sub x})O{sub 3} compounds (x=0.00, 0.03, 0.08; TM=Cu{sup 2+}, Ni{sup 2+}) were investigated between 5 K and 300 K by means of dc magnetic measurements and neutron powder diffraction analysis followed by Rietveld refinement. Both substituting cations lead to a reduction of the long range ferromagnetic ordering temperature; ferromagnetism is strongly suppressed in the 8% Cu-substituted sample, where long- and short-range FM magnetic orders coexist together with short-range A-type AFM order. This particular feature can be related to the Jahn–Teller character of Cu{sup 2+}, absent in Ni{sup 2+}, and suggests the occurrence of a quantum critical point in the (La{sub 0.63}Ca{sub 0.37})(Mn{sub 1−x}Cu{sub x})O{sub 3} system. - Graphical abstract: Rietveld refinement plot of (La{sub 0.63}Ca{sub 0.37})(Mn{sub 0.92}Cu{sub 0.08})O{sub 3} showing in the inset the coexistence of broad A-type AFM peaks with FM ones. Highlights: ► (La{sub 0.63}Ca{sub 0.37})MnO{sub 3} was substituted with Ni and Cu. ► Neutron powder diffraction and Rietveld refinement were carried out. ► A quantum critical point possibly occurs in the (La{sub 0.63}Ca{sub 0.37})(Mn{sub 1−x}Cu{sub x})O{sub 3} system.

Effect of Nickel Equivalent on Austenite Transition Ratio in Ni-Mn-Cu Cast Iron

Directory of Open Access Journals (Sweden)

Janus A.

2013-06-01

Full Text Available Determined was quantitative effect of nickel equivalent value on austenite decomposition degree during cooling-down castings of Ni-Mn- Cu cast iron. Chemical composition of the alloy was 1.8 to 5.0 % C, 1.3 to 3.0 % Si, 3.1 to 7.7 % Ni, 0.4 to 6.3 % Mn, 0.1 to 4.9 % Cu, 0.14 to 0.16 % P and 0.03 to 0.04 % S. Analysed were castings with representative wall thickness 10, 15 and 20 mm. Scope of the examination comprised chemical analysis (including WDS, microscopic observations (optical and scanning microscopy, image analyser, as well as Brinell hardness and HV microhardness measurements of structural components.

Spin disordered resistivity of the Heusler Ni.sub.2./sub.MnGa-based alloys

Czech Academy of Sciences Publication Activity Database

Kamarád, Jiří; Kaštil, Jiří; Albertini, F.; Fabbrici, S.; Arnold, Zdeněk

2017-01-01

Roč. 131, č. 4 (2017), s. 1072-1074 ISSN 0587-4246 R&D Projects: GA ČR GAP204/12/0692 Institutional support: RVO:68378271 Keywords : spin disordered resistivity * magnetoresistance * Heusler alloys * Ni 2 MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.469, year: 2016

Formation of Al15Mn3Si2 Phase During Solidification of a Novel Al-12%Si-4%Cu-1.2%Mn Heat-Resistant Alloy and Its Thermal Stability

Science.gov (United States)

Suo, Xiaojing; Liao, Hengcheng; Hu, Yiyun; Dixit, Uday S.; Petrov, Pavel

2018-02-01

The formation of Al15Mn3Si2 phase in Al-12Si-4Cu-1.2Mn (wt.%) alloy during solidification was investigated by adopting CALPHAD method and microstructural observation by optical microscopy, SEM-EDS, TEM-EDS/SAD and XRD analysis; SEM fixed-point observation method was applied to evaluate its thermal stability. As-cast microstructural observation consistently demonstrates the solidification sequence of the studied alloy predicted by phase diagram calculation. Based on the phase diagram calculation, SEM-EDS, TEM-EDS/SAD and XRD analysis, as well as evidences on Al-Si-Mn-Fe compounds from the literature, the primary and eutectic Mn-rich phases with different morphologies in the studied alloy are identified to be Al15Mn3Si2 that has a body-centered cubic (BCC) structure with a lattice constant of a = 1.352 nm. SEM fixed-point observation and XRD analysis indicate that Al15Mn3Si2 phase has more excellent thermal stability at high temperature than that of CuAl2 phase and can serve as the major strengthening phase in heat-resistant aluminum alloy that has to face a high-temperature working environment. Results of tension test show that addition of Mn can improve the strength of Al-Si-Cu alloy, especially at elevated temperature.

Teores de Fe, Mn, Zn, Cu, Ni E Co em solos de referência de Pernambuco

Directory of Open Access Journals (Sweden)

Caroline Miranda Biondi

2011-06-01

Full Text Available Metais pesados formam um grupo de elementos com particularidades relevantes e de ocorrência natural no ambiente, como elementos acessórios na constituição de rochas. Esses elementos, apesar de associados à toxidez, exigem tratamento diferenciado em relação aos xenobióticos, uma vez que diversos metais possuem essencialidade (Fe, Mn, Cu, Zn e Ni e benefício (Co comprovados para as plantas. Nesse contexto, o objetivo deste trabalho foi determinar os teores naturais dos metais Fe, Mn, Zn, Ni, Cu e Co nos solos de referência de Pernambuco. Foram coletadas amostras de solo nas três regiões fisiográficas (Zona da Mata, Agreste e Sertão, dos dois primeiros horizontes dos 35 solos de referência do Estado de Pernambuco. A digestão das amostras baseou-se no método 3051A (USEPA, 1998, e a determinação foi efetuada em ICP-OES. Correlações significativas foram estabelecidas entre os metais e entre estes e a fração argila do solo, em ambos os horizontes, indicando a associação comum da maioria dos metais com solos mais argilosos. A maioria dos solos apresentou teores de Fe, Mn, Zn, Cu, Ni e Co menores que os de solos de outras regiões do País, com litologia mais máfica, o que corrobora o fato de que os teores desses elementos são mais diretamente relacionados aos minerais Fe-magnesianos. Os resultados indicam baixo potencial dos solos de Pernambuco em liberar Cu, Co e Ni para plantas, enquanto deficiências de Zn, Fe e Mn são menos prováveis. Os teores naturais de Fe, Mn, Zn, Cu, Ni e Co determinados podem ser utilizados como base para definição dos Valores de Referência de Qualidade para os solos de Pernambuco, de acordo com o preconizado pela legislação nacional.

Defects in Cu(InGa)Se2/CdS heterostructure films induced by hydrogen ion implantation

International Nuclear Information System (INIS)

Yakushev, M.V.; Tomlinson, R.D.; Hill, A.E.; Pilkington, R.D.; Mudryi, A.V.; Bondar, I.V.; Victorov, I.A.; Gremenok, V.F.; Shakin, I.A.; Patuk, A.I.

1999-01-01

The influence of H + ion implantation on the photoluminescence properties of Cu(InGa)Se 2 /CdS heterostructures has been studied. This treatment was found to increase the photoluminescence intensity of donor-acceptor band at 1.13 eV because of the passivation by hydrogen atoms of the non-radiative recombination centers on the boundary of Cu(InGa)Se 2 and CdS layers. Two broad bands peaks at 0.96 eV and at 0.82 eV in photoluminescence spectra of ion-implanted Cu(InGa)Se 2 films have been found. The tentative model to explain the origin of the broad photoluminescence bands has been discussed

Producing a particle-reinforced AlCuMgMn alloy by means of mechanical alloying; Herstellung einer partikelverstaerkten AlCuMgMn-Legierung durch mechanisches Legieren

Energy Technology Data Exchange (ETDEWEB)

Nestler, D.; Wielage, B. [TU Chemnitz, Institut fuer Werkstoffwissenschaft und Werkstofftechnik (Germany); Siebeck, S.

2012-07-15

High-energy ball milling (HEM) with subsequent consolidation is a suitable method to produce particle-reinforced aluminium materials. The task of HEM is to distribute the reinforcement particles as homogeneously as possible. A further application of HEM is mechanical alloying (MA). This paper deals with the combination of both applications. Pure metallic powders (Al, Cu, Mg, Mn) were milled together with SiC particles up to 10 h. The composition of the metallic powder corresponds to that of the alloy AA2017 (3.9% Cu, 0.7% Mg, 0.6% Mn). In previous experiments [1], this alloy was used in the form of atomized powder. The changes in microstructure during the formation of the composite powder have been studied by light microscopy, SEM, EDXS and XRD. The results show that the production of composite powders in a single step is possible. This not only allows the economical production of such powders, but also facilitates the use of alloy compositions that are not producible via the melting route, or only producible with difficulty via the melting route. It's possible to produce tailor-made-alloys. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electron spin dynamics and optical orientation of Mn2+ ions in GaAs

Science.gov (United States)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

2013-04-01

We present an overview of spin-related phenomena in GaAs doped with low concentration of Mn-acceptors (below 1018 cm-3). We use the combination of different experimental techniques such as spin-flip Raman scattering and time-resolved photoluminescence. This allows to evaluate the time evolution of both electron and Mn spins. We show that optical orientation of Mn ions is possible under application of weak magnetic field, which is required to suppress the manganese spin relaxation. The optically oriented Mn2+ ions maintain the spin and return part of the polarization back to the electron spin system providing a long-lived electron spin memory. This leads to a bunch of spectacular effects such as non-exponential electron spin decay and spin precession in the effective exchange fields.

Effect of alloying elements on the shape memory properties of ductile Cu-Al-Mn alloys

International Nuclear Information System (INIS)

Sutou, Y.; Kainuma, R.; Ishida, K.

1999-01-01

The effect of alloying elements on the M s temperature, ductility and the shape memory properties of Cu-Al-Mn ductile shape memory (SM) alloys was investigated by differential scanning calorimetry, cold-rolling and tensile test techniques. It was found that the addition of Au, Si and Zn to the Cu 73 -Al 17 -Mn 10 alloy stabilized the martensite (6M) phase increasing the M s temperature, while the addition of Ag, Co, Cr, Fe, Ni, Sn and Ti decreased the stability of the martensite phase, decreasing the M s temperature. The SM properties were improved by the addition of Co, Ni, Cr and Ti. (orig.)

Luminescence Characteristics of ZnGa2O4 Thick Film Doped with Mn2+ and Cr3+ at Various Sintering Temperatures

Science.gov (United States)

Cha, Jae Hyeok; Kim, Kyung Hwan; Park, Yong Seo; Kwon, Sang Jik; Choi, Hyung Wook

2007-10-01

ZnGa2O4 phosphor separately doped with Mn2+ and Cr3+ was synthesized by solid-state reaction, and thick films were deposited by screen printing. The X-ray diffraction (XRD) patterns of ZnGa2O4 phosphor thick films show a (311) main peak and a spinal phase. Uniform distribution and filled morphology of the doped ZnGa2O4 phosphor thick films were formed at the sintering temperature of 1100 °C. The CL spectrum of Mn2+-doped ZnGa2O4 shows the main peak of 512 nm green emission with the 4T1→6A1 transition of Mn2+ ions and the CL spectrum of Cr3+-doped ZnGa2O4 shows the main peak of 716 nm red emission with the 2E→4A2 transition of Cr3+ ions.

Structural and magnetic properties of Nd0.67Ba0.33MnO3 manganites with partial replacement of Fe and Cu at Mn-site

Science.gov (United States)

Sudakshina, B.; Arun, B.; Chandrasekhar, K. Devi; Yang, H. D.; Vasundhara, M.

2018-06-01

We have investigated the structural and magnetic properties of Nd0.67Ba0.33MnO3 manganite and partial replacement of Mn with Fe and Cu compounds followed by X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS) and vibrating sample magnetometer (VSM). The Rietveld refinement of XRD indicates orthorhombic crystal structure with I-mma space group for all the compounds and thus obtained lattice parameters confirm the presence of co-operative Jahn-Teller effect. XRD and XAS spectra results suggests the existence of Fe3+ in Fe-substituted compound where as a mixed state of Cu2+ and Cu3+ ions in the Cu-substituted compound. The ferromagnetic (FM) to paramagnetic (PM) transition and magnetic moment is found to decrease upon the substitution of Fe and Cu atoms because of the suppression of double exchange interaction. The theoretically obtained and experimentally determined values of effective PM moment and saturation magnetic moment confirms the presence of inhomogeneous magnetic states containing FM and antiferromagnetic clusters in all the studied compounds.

X-ray study of CuGa sub x In sub 1-x Se sub 2 solid solutions

Energy Technology Data Exchange (ETDEWEB)

Suri, D.K.; Nagpal, K.C. (National Physical Lab., New Delhi (India). Materials Characterization Div.); Chadha, G.K. (Delhi Univ. (India). Dept. of Physics and Astrophysics)

1989-12-01

The semiconducting compound CuGa{sub x}In{sub 1-x}Se{sub 2} crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe{sub 2} and CuInSe{sub 2} can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 ({proportional to}1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa{sub 0.5}In{sub 0.5}Se{sub 2} solid solution. The JCPDS Diffraction File No. for CuInSe{sub 2} is 40-1487 and for CuGa{sub 0.5}In{sub 0.5}Se{sub 2} is 40-1488. (orig.).

Effect of Fertilizers and Irrigation on Distribution of Mobile Forms of Mn, Zn and Cu in Typical Chernozems of the Republic of Moldova

Directory of Open Access Journals (Sweden)

Leah T. Gh.

2013-04-01

Full Text Available The paper presents the study results of mobile forms of Mn, Zn and Cu in irrigated fertilized and unfertilized chernozems typical. Irrigation affects the content and distribution of mobile forms of trace elements, increasing their removal beyond the 150 cm of soil layer. The fertilization increase the migration of Cu until 130 cm, fixed Mn and Zn in 0-60 cm of the irrigated soils. During irrigation constitutes a danger of soil contamination with Mn, Cu and Zn.

The effect of Mn substitution on the structure and magnetic properties of Se(Cu sub 1 sub - sub x Mn sub x)O sub 3 solid solution

CERN Document Server

Escamilla, R; Rosales, M I; Moran, E C; Alario-Franco, M A

2003-01-01

The effects of Mn substitution on the structure and magnetic properties of the SeMO sub 3 (M = Cu sub 1 sub - sub x Mn sub x) solid solution have been studied. Rietveld refinements of the x-ray diffraction patterns of these samples indicate that the manganese ions occupy copper sites. This replacement induces significant changes in the M-O bond lengths that give rise to abrupt decreases of the [M-O sub 6] octahedral distortion. In contrast, the M-O(1)-M and M-O(2)-M bond angles remain essentially constant. The magnetic behaviour of this solid solution was studied in the temperature range of 2 K < T < 300 K. The temperature dependence of the inverse magnetic susceptibility is well described by the Curie-Weiss law at high temperatures, in the composition range studied. We found that the substitution of Mn for Cu induces a sharp drop in the saturation moment of SeCuO sub 3. At about 10% of Mn there is a change from positive to negative Weiss constant theta sub W that is mainly due to the [M-O sub 6] octahe...

Investigation of defects in Cu(In,Ga)S{sub 2} and Cu(In,Ga)Se{sub 2} solar cells by space charge spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Riediger, Julia; Ohland, Joerg; Knipper, Martin; Parisi, Juergen; Riedel, Ingo [Thin Film Photovoltaics, Energy- and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany); Meeder, Alexander [Soltecture GmbH, 12487 Berlin (Germany)

2012-07-01

If deep defect states in the absorber of a solar cell act as recombination centers, they may limit the carrier lifetime and thus the open circuit voltage. This is related to the defect's activation energy and spatial position. In this study the defect landscape of chalcopyrite thin film solar cells with varied absorber composition was investigated by space charge spectroscopy. The absorber layer in Cu(In,Ga)S{sub 2} samples arises from rapid thermal process (RTP) in sulfur vapor while Cu(In,Ga)Se{sub 2} absorbers were processed via co-evaporation of the constituents. Several defect states were found by deep level spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). With the knowledge of the defect activation energies we derived the spatial defect concentrations from (illuminated) capacitance-voltage (CV) measurements and discuss the results for both material systems. To identify the often discussed ''N1'' defect, the measurements were repeated after annealing and changes in the defect spectra were evaluated.

Magnetic domains and twin microstructure of single crystal Ni-Mn-Ga exhibiting magnetic shape memory effect

Czech Academy of Sciences Publication Activity Database

Heczko, Oleg; Kopecký, Vít; Fekete, Ladislav; Jurek, Karel; Kopeček, Jaromír; Straka, L.; Seiner, Hanuš

2015-01-01

Roč. 51, č. 11 (2015), s. 7150406 ISSN 0018-9464 R&D Projects: GA ČR GB14-36566G; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic domain * magnetic shape memory * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

Crystal field and low energy excitations measured by high resolution RIXS at the L edge of Cu, Ni and Mn

DEFF Research Database (Denmark)

Ghiringhelli, G.; Piazzalunga, A.; Wang, X.

2009-01-01

of the 3d transition metals with unprecedented energy resolution, of the order of 100 meV for Mn, Ni and Cu. We present here some preliminary spectra on CuO, malachite, NiO, , MnO and . The dd excitations are very well resolved allowing accurate experimental evaluation of 3d state energy splitting. The low...

The Effect of Powder Ball Milling on the Microstructure and Mechanical Properties of Sintered Fe-Cr-Mo-Mn-(Cu) Steel

Science.gov (United States)

Kulecki, P.; Lichańska, E.

2017-12-01

The effect of ball milling powder mixtures of Höganäs pre-alloyed iron Astaloy CrM, low-carbon ferromanganese Elkem, elemental electrolytic Cu and C-UF graphite on the sintered structure and mechanical properties was evaluated. The mixing was conducted using Turbula mixer for 30 minutes and CDI-EM60 frequency inverter for 1 and 2 hours. Milling was performed on 150 g mixtures with (in weight %) CrM + 1% Mn, CrM + 2% Mn, CrM + 1% Mn + 1% Cu and CrM + 2% Mn + 1% Cu, all with 0.6%C. The green compacts were single pressed at 660 MPa according to PN-EN ISO 2740. Sintering was carried out in a laboratory horizontal furnace Carbolite STF 15/450 at 1250°C for 60 minutes in 5%H2 - 95%N2 atmosphere with a heating rate of 75°C/min, followed by sintering hardening at 60°C/min cooling rate. All the steels were characterized by martensitic structures. Mechanical testing revealed that steels based on milled powders have slightly higher mechanical properties compared to those only mixed and sintered. The best combination of mechanical properties, for ball milled CrM + 1% Mn + 1% Cu was UTS 1046 MPa, TRS 1336 MPa and A 1.94%.

A better ferrimagnetic half-metal LuCu{sub 3}Mn{sub 4}O{sub 12}: Predicted from first-principles investigation

Energy Technology Data Exchange (ETDEWEB)

Lv Shuhui; Li Hongping [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School, Chinese Academy of Sciences, Beijing 100049 (China); Han Deming; Wu Zhijian [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Liu Xiaojuan, E-mail: lxjuan@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Meng Jian, E-mail: jmeng@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2011-03-15

Electronic structure calculations based on density functional theory (DFT) within the generalized gradient approximation (GGA) and GGA+U for manganite cuprate compound LuCu{sub 3}Mn{sub 4}O{sub 12} have been performed, using the full-potential linearized augmented plane wave method. The calculated results indicate that LuCu{sub 3}Mn{sub 4}O{sub 12} is ferrimagnetic and half-metallic in both GGA and GGA+U calculations. The minority-spin band gap is 0.7 eV within GGA, which is larger than that of LaCu{sub 3}Mn{sub 4}O{sub 12} (0.3 eV), indicating its better half-metallicity. Further, the minority-spin gap enlarges from 0.7 to 2.8 eV with U taken into account, and simultaneously the Fermi level being shifted to the middle of the gap, making the half-metallic energy gap to be 1.21 eV. These results demonstrate that electronic correlation effect enhances the stability of half-metallic property. These facts make this system interesting candidates for applications in spintronic devices. - Research highlights: The electronic and magnetic properties of LuCu{sub 3}Mn{sub 4}O{sub 12} are analyzed. Both GGA and GGA+U methods are reported and compared. A better half-metal LuCu{sub 3}Mn{sub 4}O{sub 12} is obtained with large half-metallic gap. The results agree very well with the experimental data.

Effect of Mn on microstructures and mechanical properties of Al-Mg-Si-Cu-Cr-V alloy

Directory of Open Access Journals (Sweden)

Zhao Zhihao

2012-11-01

Full Text Available In order to improve the performances of the Al-Mg-Si-Cu-Cr-V alloy, various amounts of Mn (0-0.9wt.% were added. The effect of this Mn on the microstructures and mechanical properties of Al-Mg-Si-Cu-Cr-V alloys in different states, especially after hot extrution and solid solution treatment, was systematically studied using scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, and mechanical tests at room temperature. The results show that 0.2wt.% Mn can both refine the as-cast microstructure of the alloy and strengthen the extrusion+T6 state alloy without damaging the plasticity badly due to the formation of Al15(FeMn3Si2 and Al15Mn3Si2 dispersoids. Compared with the extrusion+T6 state alloy without Mn addition, the ultimate tensile strength and yield strength of the alloy with 0.2wt.% Mn addition are increased from 416.9 MPa to 431.4 MPa, 360.8 MPa to 372 MPa, respectively. The elongation of the extrusion+T6 state alloy does not show obvious change when the Mn addition is less than 0.5wt.%, and for the alloy with 0.2wt.% Mn addition its elongation is still as high as 15.6%. However, when over 0.7wt.% Mn is added to the alloy, some coarse, stable and refractory AlVMn and Al(VMnSi phases form. These coarse phases can reduce the effect of Mn on the inhibition of re-crystallization; and they retain the angular morphology permanently after the subsequent deformation process and heat treatment. This damages the mechanical properties of the alloy.

Synthesis and mechanical properties of conventionally cast icosahedral particle-reinforced Al-Mn(-Cu)-Be-Si alloys

International Nuclear Information System (INIS)

Fleury, E.; Chang, H.J.; Kim, D.H.; Kim, D.H.; Kim, W.T.

2005-01-01

The microstructure of the Al-Mn(-Cu)-Be-Si alloys analyzed by X-ray diffraction and TEM consisted of icosahedral (i) quasicrystal particles embedded in α Al matrix. The conjoint addition of Si and Be elements enabled the i-phase formation in diameter 10 mm specimens prepared by conventional casting technique. The size, volume fraction and stability of the i-phase were found to be dependent on the Mn content. The addition of 2 at.% Cu did not affect the formation and stability of the i-phase but contributed significantly to the enhancement of the mechanical properties. (orig.)

Effects of Mn, Cu doping concentration to the properties of magnetic nanoparticles and arsenic adsorption capacity in wastewater

International Nuclear Information System (INIS)

Thi, Tran Minh; Trang, Nguyen Thi Huyen; Van Anh, Nguyen Thi

2015-01-01

Highlights: • Investigation the decrease of saturate magnetic moment of Fe 3 O 4 over time. • Substitution of Mn, Cu ions into Fe position to create stable properties of materials. • Investigate the surface and mesopore structure of nanoparticles. • The arsenic adsorption capacity of Cu doped Fe 3 O 4 nanomaterials is higher than of Fe 3 O 4 and Mn doped Fe 3 O 4 nanomaterials. - Abstract: The research results of Fe 3 O 4 and Mn, Cu doped Fe 3 O 4 nanomaterials synthesized by a chemical method for As(III) wastewater treatment are presented in this paper. The X-ray diffraction patterns and transmission electron microscopy images showed that samples had the cubic spinel structure with the grain sizes were varied from 9.4 nm to 18.1 nm. The results of vibrating sample magnetometer measurements at room temperature showed that saturation magnetic moments of Fe 1−x Cu x Fe 2 O 4 and Fe 1−x Mn x Fe 2 O 4 samples decreased from 65.9 emu/g to 53.2 emu/g and 65.9 emu/g to 61.5 emu/g, respectively, with the increase of Cu, Mn concentrations from 0.0 to 0.15. The nitrogen adsorption–desorption isotherm of a typical Fe 3 O 4 sample at 77 K was studied in order to investigate the surface and porous structure of nanoparticles by BET method. The specific surface area of Fe 3 O 4 magnetic nanoparticles was calculated about of 100.2 m 2 /g. The pore size distribution of about 15–20 nm calculated by the BJH (Barrett, Joyner, and Halendar) method at a relative pressure P/P 0 of about 1. Although the saturation magnetic moments of samples decreased when the increase of doping concentration, but the arsenic adsorption capacity of Cu doped Fe 3 O 4 nanoparticles is better than that of Fe 3 O 4 and Mn doped Fe 3 O 4 nanoparticles in a solution with pH = 7. In the solution with a pH > 14, the arsenic adsorption of magnetic nanoparticles is insignificant

Inkjet printed Cu(In,Ga)S{sub 2} nanoparticles for low-cost solar cells

Energy Technology Data Exchange (ETDEWEB)

Barbé, Jérémy, E-mail: jeremy.barbe@kaust.edu.sa; Eid, Jessica [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia); Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael [Zentrum fur Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW) (Germany); Agrawal, Rakesh [Purdue University, School of Chemical Engineering (United States); Del Gobbo, Silvano, E-mail: silvano.delgobbo@gmail.com [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia)

2016-12-15

Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S{sub 2} (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

International Nuclear Information System (INIS)

Zhuang Huihui; Yan Jinliang; Xu Chengyang; Meng Delan

2014-01-01

Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga 2 O 3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga 2 O 3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga 2 O 3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga 2 O 3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10 −3 Ω −1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga 2 O 3 layer thickness of 15 nm. (semiconductor materials)

Post-GOE redox insights from Mo isotopes, Ce anomalies, and Mn from the 2.24 Ga Kazput Formation

Science.gov (United States)

Thoby, M.; Konhauser, K.; Philippot, P.; Killingsworth, B.; Warchola, T.; Lalonde, S.

2017-12-01

Following the Great Oxidation event (GOE) defined from 2.45 to 2.2 Ga, an event marking the first appearance of widespread atmospheric oxygen, a combination of decreased Mn(II) supply from land and increased Mn(IV)-precipitation in the oceans should have resulted in lower concentrations of Mn in seawater. Nevertheless, it appears that some early Proterozoic marine sediments record high seawater Mn concentrations hundreds of millions of years after the GOE. Here we investigate a Mn excursion associated with marine carbonates and shales of the 2.31 Ga Kazput Formation. Samples were recovered from drill core collected during the Turee Creek Drilling Project (TCDP). Using molybdenum (Mo) isotope data coupled with cerium (Ce) anomalies, we define the redox condition of the Kazput depositional environment. Initial results show no Mo fractionation and few cerium anomalies in carbonates, pointing to an anoxic basin without Mn oxide precipitates. Additionally, XRF data on the shales indicates an association of Mn with calcium (Ca) suggesting an anoxic environment at the time of their deposition. Our results provide new insights into the nature and environment of the Turee Creek basin and the extent of oxygenation of surface waters after the GOE.

Arrays of ZnO/CuInxGa1−xSe2 nanocables with tunable shell composition for efficient photovoltaics

International Nuclear Information System (INIS)

Akram, Muhammad Aftab; Javed, Sofia; Xu, Jun; Mujahid, Mohammad; Lee, Chun-Sing

2015-01-01

Arrays of one-dimensional (1D) nanostructure are receiving much attention for their optoelectronic and photovoltaic applications due to their advantages in light absorption, charge separation, and transportation. In this work, arrays of ZnO/CuIn x Ga 1−x Se 2 core/shell nanocables with tunable shell compositions over the full range of 0 ≤ x ≤ 1 have been controllably synthesized. Chemical conversions of ZnO nanorods to a series of ZnO-based nanocables, including ZnO/ZnSe, ZnO/CuSe, ZnO/CuSe/In x Ga 1−x , ZnO/CuSe/(In x Ga 1−x ) 2 Se 3 , and ZnO/CuIn x Ga 1−x Se 2 , are well designed and successfully achieved. Composition-dependent influences of the CuIn x Ga 1−x Se 2 shells on photovoltaic performance are investigated. It is found that the increase in indium content (x) leads to an increase in short-circuit current density (J SC ) but a decrease in open-circuit voltage (V OC ) for the ZnO/CuIn x Ga 1−x Se 2 nanocable solar cells. An array of ZnO/CuIn 0.67 Ga 0.33 Se 2 nanocables with a length of ∼1 μm and a shell thickness of ∼10 nm exhibits a bandgap of 1.20 eV, and yields a maximum power conversion efficiency of 1.74% under AM 1.5 G illumination at an intensity of 100 mW/cm 2 . It dramatically surpasses that (0.22%) of the ZnO/CuIn 0.67 Ga 0.33 Se 2 planar thin-film device. Our work reveals that 1D nanoarray allows efficient photovoltaics without using toxic CdS buffer layer

Magnetoelastic effects and magnetic anisotropy in Ni.sub.2./sub.MnGa polycrystals

Czech Academy of Sciences Publication Activity Database

Albertini, F.; Morellon, L.; Algarabel, P. A.; Ibarra, M. R.; Pareti, L.; Arnold, Zdeněk; Calestini, G.

2001-01-01

Roč. 89, č. 10 (2001), s. 5614-5617 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z1010914 Keywords : linear thermal expansion * magnetostriction * Ni_2MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.128, year: 2001

Optics of the CuGaSe{sub 2} solar cell for highly efficient tandem concepts; Optik der CuGaSe{sub 2}-Solarzelle fuer hocheffiziente Tandemkonzepte

Energy Technology Data Exchange (ETDEWEB)

Schmid, Martina

2010-01-25

A principle aim of solar cell research lies in optimizing the exploitation of the incident solar light. Yet, for single junction solar cells there exists an efficiency limit as described by Shockley and Queisser. The only concept realized so far to overcome this threshold is - apart from concentration - the multijunction solar cell. However, any kind of multijunction design poses new challenges: The upper wide-gap solar cell (top cell) needs to show efficient light absorption in the short-wavelength region. At the same time sufficient transmission for long-wavelength light is required which then needs to be absorbed effectively by the low-gap bottom cell. In tandem solar cells a proper light management in top and bottom solar cell is of great importance. This work focuses on chalcopyrite-based tandem solar cells. For the wide-bandgap IR-transparent ZnO:Al/i-ZnO/CdS/CuGaSe{sub 2}/SnO{sub 2}:F/glass solar cell an optical model has been established. Starting from modeling each of the individual layers building the stack the optical behavior of the complete thin film system of the top cell could be described. Carefully selected layer combinations and comparison of experimental and calculated data allowed for the attribution of transmission losses to the distinct material properties. Defects in the absorber are of crucial importance but also free carrier absorption in the window and in the transparent back contact contribute significantly to optical losses. The quantification of the losses was achieved by calculating the effects of reduced top cell transmission on the photo current of a simplified bottom cell. An extension of the optical model allowed to calculate the effective absorption in the individual layers and to determine reflection losses at the interfaces. From these results an optimized top cell stack was derived which is characterized by A) simulation of the monolithic integration, B) reduced layer thicknesses wherever possible from the electrical point of

X-ray diffraction study of thermally and stress-induced phase transformations in single crystalline Ni-Mn-Ga alloys

International Nuclear Information System (INIS)

Martynov, V.V.

1995-01-01

Using in-situ single crystal X-ray diffraction methods, thermally- and stress-induced crystal structure evolution was investigated in two Ni-Mn-Ga Heusler-type alloys. For the 51at.%Ni-24at.%Mn-25at.%Ga alloy it was found that application of external stress in a temperature range ∼20 C above the M s at first causes intensity changes of X-ray diffuse scattering peaks in β-phase. Further stressing results in stress-induced phase transformations and under the appropriate conditions three successive martensitic transformations (one is parent-to-martensite and two are martensite-to-martensite transformations) can be stress induced. Of these only the parent-to-martensite transformation can be thermally-induced. Two successive structural transformations (thermally-induced parent-to-martensite and stress-induced martensite-to-martensite transformations) were found in 52at.%Ni-25at.%Mn-23at.%Ga alloy. Crystal structure, lattice parameters, type of modulation, and the length of modulation period for all martensites were identified. (orig.)

The structure and magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film

Science.gov (United States)

Huang, Yuanqi; Chen, Zhengwei; Zhang, Xiao; Wang, Xiaolong; Zhi, Yusong; Wu, Zhenping; Tang, Weihua

2018-05-01

High quality epitaxial single phase (Ga0.96Mn0.04)2O3 and Ga2O3 thin films have been prepared on sapphire substrates by using laser molecular beam epitaxy (L-MBE). X-ray diffraction results indicate that the thin films have the monoclinic structure with a ≤ft( {\\bar 201} \\right) preferable orientation. Room temperature (RT) ferromagnetism appears and the magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films. Project supported by the National Natural Science Foundation of China (Nos. 11404029, 51572033, 51172208) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT).

Influence of band-gap grading on luminescence properties of Cu(In,Ga)Se{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Haarstrich, Jakob; Metzner, Heiner; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, Thorsten; Kaufmann, Christian A.; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Solar Energy Research, Institute for Technology, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Undisz, Andreas [Institute for Material Science and Technology, Metallic Materials, Friedrich-Schiller-University Jena, Loebdergraben 32, 07743 Jena (Germany)

2011-07-01

Cathodoluminescence (CL) has been measured on Cu(In,Ga)Se{sub 2} with Ga-grading as it is used in high-efficiency thin-film solar cells at 10 K in both cross-section and plain view configuration. In cross-section geometry, we show that the vertical profile of the emission energy represents the Ga-profile in the film and, thus, we are able to measure the band-gap grading present by means of CL methods. At the same time, we observe a strong drift of excited charge carriers towards the minimum of the band-gap which can be explained by the Ga-grading. It is shown by voltage-dependent CL, how these results directly influence the interpretation of luminescence spectra obtained on Ga-graded Cu(In,Ga)Se{sub 2} and, thus, they will have to be considered as a basis for all forthcoming investigations on this topic.

The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

International Nuclear Information System (INIS)

Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

2006-01-01

The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

Opto-electronic characterization of polycrystalline CuInS2 and Cu(In,Ga)S2 absorber layers by photoluminescence

International Nuclear Information System (INIS)

Heidemann, Florian

2011-01-01

Photoluminescence (PL) is an established method to characterize the optoelectronic properties of solar cell absorber layers. With the help of Planck's generalized law it is in principle possible to determine the quasi-Fermi level splitting - which is the upper limit of the open circuit voltage V oc - and the absorption coefficient of a solar cell before its actual completion. For large-scale measurements (mm/cm regime) this is valid for absorber layers with lateral homogeneous properties, however it is not directly transferable to polycrystalline semiconductors due to laterally fluctuating opto-electronic and structural parameters. The lateral fluctuations in opto-electronic properties of polycrystalline Cu(In 1-ξ Ga ξ )S 2 have been analyzed (e.g. with respect to fluctuations in quasi-Fermi level splitting, optical band-gap and sub band-gap absorbance) by measuring laterally and spectrally resolved PL on the μm-scale and providing the transition towards macroscopic PL measurements on the mm-scale. To give a comprehensive characterization, surface roughness and optical properties have been studied and methods for feature extraction have been applied. On the microscopic scale variations in the quasi-Fermi level splitting Δ x,y E Fnp of about 38 meV (CuInS 2 ) and 53 meV (Cu(In,Ga)S 2 ) have been found. From local absorbance spectra extracted from PL measurements on Cu(In,Ga)S 2 fluctuations in the optical band-gap E opt with a full width at half maximum of FWHM E opt ∼80 meV could be extracted, whereas band-gap fluctuations in CuInS 2 are found to be negligible. Thus band-gap fluctuations seem to be mainly caused by a varying gallium (Ga) content. Furthermore, regions with higher E opt and with it a potential higher Ga content, show a higher quasi-Fermi level splitting. As a major limiting factor for the local quasi-Fermi level splitting E Fnp the local density of deep defects could be identified. Due to low luminescence yields of Cu(In 1-ξ Ga ξ )S 2 under

Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment

Czech Academy of Sciences Publication Activity Database

Zemen, Jan; Kučera, Jan; Olejník, Kamil; Jungwirth, Tomáš

2009-01-01

Roč. 80, č. 15 (2009), 155203/1-155203/29 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801; NAMASTE(XE) FP-7214499 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute magnetic semiconductor * magnetic anisotropy * Ga,Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://arxiv.org/abs/0904.0993

Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure

International Nuclear Information System (INIS)

Nelson, A.J.; Gabor, A.M.; Contreras, M.A.; Tuttle, J.R.; Noufi, R.; Sobol, P.E.; Asoka-Kumar, P.; Lynn, K.G.

1995-01-01

X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se 2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe 2 and Cu(In,Ga)Se 2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. copyright 1995 American Institute of Physics

Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux

International Nuclear Information System (INIS)

Han, Y; Fay, M W; Novikov, S V; Edmonds, K W; Gallagher, B L; Campion, R P; Staddon, C R; Foxon, C T; Brown, P D

2006-01-01

Zinc-blende Ga 1-x Mn x N epilayers grown by plasma assisted molecular beam epitaxy as a function of Mn flux have been assessed using a variety of structural characterisation techniques. Increasing Mn flux is associated with the build up of a Mn surfactant layer during the early states of growth and a transition from zinc-blende single phase growth to zincblende/ wurtzite mixed phase growth

The ferromagnetic shape-memory effect in Ni-Mn-Ga

International Nuclear Information System (INIS)

Marioni, M.A.; O'Handley, R.C.; Allen, S.M.; Hall, S.R.; Paul, D.I.; Richard, M.L.; Feuchtwanger, J.; Peterson, B.W.; Chambers, J.M.; Techapiesancharoenkij, R.

2005-01-01

Active materials have long been used in the construction of sensors and devices. Examples are piezo-electric ceramics and shape memory alloys. The more recently developed ferromagnetic shape-memory alloys (FSMAs) have received considerable attention due to their large magnetic field-induced, reversible strains (up to 10%). In this article, we review the basic physical characteristics of the FSMA Ni-Mn-Ga (crystallography, thermal, mechanical and magnetic behavior). Also, we present some of the works currently under way in the areas of pulse-field and acoustic-assisted actuation, and vibration energy absorption

Large energy absorption in Ni-Mn-Ga/polymer composites

International Nuclear Information System (INIS)

Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M.

2005-01-01

Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples

Lattice parameter values and phase transitions for the Cu2Cd1-zMn zGeSe4 and Cu2Cd1-zFe zGeSe4 alloys

International Nuclear Information System (INIS)

Quintero, E.; Tovar, R.; Quintero, M.; Delgado, G.E.; Morocoima, M.; Caldera, D.; Ruiz, J.; Mora, A.E.; Briceno, M.; Fernandez, J.L.

2007-01-01

X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu 2 Cd 1-z Mn z GeSe 4 and Cu 2 Cd 1-z Fe z GeSe 4 alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. The effect of the annealing temperature and cooling rate to room temperature are discussed. For the Cu 2 Cd 1-z Fe z GeSe 4 system, only two single solid phase fields, the tetragonal stannite α and the wurtz-stannite δ structures were found to occur in the diagram. For the Cu 2 Cd 1-z Mn z GeSe 4 system, in addition to the tetragonal stannite α and the wurtz-stannite δ phases, MnSe was found to exist in the diagram. The DTA experiments showed that the cooling curves for both systems exhibited effects of undercooling

Correlation between electron work functions of multiphase Cu-8Mn-8Al and de-alloying corrosion

Science.gov (United States)

Punburi, P.; Tareelap, N.; Srisukhumbowornchai, N.; Euaruksakul, C.; Yordsri, V.

2018-05-01

Low energy electron emission microscopy (LEEM) was used to measure local transition energy that was directly correlated to electron work function (EWF) of multiphase manganese-aluminum bronze alloys. We developed color mapping to distinguish the EWF of multiple phases and clarified that the EWF were in the following order: EWF of α > EWF of β > EWF of κ (EWFα > EWFβ > EWFκ). De-alloying corrosion took place due to the micro-galvanic cell at grain boundaries before it propagated into the β phase that had lower EWF than the α phase. The α phase was a stable phase because it contained high Cu while the β phase contained high Al and Mn. In addition, XRD analysis showed that the texture coefficient of the β phase revealed that almost all of the grains had (2 2 0) orientation, the lowest EWF compared to (1 1 1) and (2 0 0). Furthermore, transmission electron microscopy illustrated that there were fine Cu3Mn2Al precipitates in the Cu2MnAl matrix of the β phase. These precipitates formed micro-galvanic cells which played an important role in accelerating de-alloying corrosion.

Hydrogen storage properties of LaMgNi{sub 3.6}M{sub 0.4} (M = Ni, Co, Mn, Cu, Al) alloys

Energy Technology Data Exchange (ETDEWEB)

Yang, Tai [Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081 (China); Key Laboratory of Integrated Exploitation of Baiyun Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhai, Tingting; Yuan, Zeming; Bu, Wengang [Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081 (China); Xu, Sheng [Key Laboratory of Integrated Exploitation of Baiyun Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhang, Yanghuan, E-mail: zhangyh59@sina.com [Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081 (China); Key Laboratory of Integrated Exploitation of Baiyun Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010 (China)

2014-12-25

Highlights: • La–Mg–Ni system AB{sub 2}-type alloys were prepared by induction melting. • Structures and lattice parameters were analysed by XRD. • Hydrogen absorption/desorption performances were studied. • Mechanisms of hydrogen absorption capacity fading were investigated. - Abstract: LaMgNi{sub 3.6}M{sub 0.4} (M = Ni, Co, Mn, Cu, Al) alloys were prepared through induction melting process. The phase compositions and crystal structures were characterised via X-ray diffraction (XRD). The hydrogen storage properties, including activation performance, hydrogen absorption capacity, cycle stability, alloy particle pulverisation and plateau pressure, were systemically investigated. Results show that Ni, Co, Mn and Cu substitution alloys exhibit multiphase structures comprising the main phase LaMgNi{sub 4} and the secondary phase LaNi{sub 5}. However, the secondary phase of the Al substitution alloy changes into LaAlNi{sub 4}. The lattice parameters and cell volumes of the LaMgNi{sub 4} phase follow the order Ni < Co < Al < Cu < Mn. Activation is simplified through partial substitution of Ni with Al, Cu and Co. The hydrogen absorption capacities of all of the alloys are approximately 1.7 wt.% at the first activation process; however, they rapidly decrease with increasing cycle number. In addition, the stabilities of hydriding and dehydriding cycles decrease in the order Al > Co > Ni > Cu > Mn. Hydriding processes result in numerous cracks and amorphisation of the LaMgNi{sub 4} phase in the alloys. The p–c isotherms were determined by a Sieverts-type apparatus. Two plateaus were observed for the Ni, Co and Al substitution alloys, whereas only one plateau was found for Mn and Cu. This result was caused by the amorphisation of the LaMgNi{sub 4} phase during the hydriding cycles. Reversible absorption and desorption of hydrogen are difficult to achieve. Substitutions of Ni with Co, Mn, Cu and Al significantly influence the reduction of hysteresis between

Graphite furnace analysis of a series of metals (Cu, Mn, Pb, Zn and Cd) in ox kidney

International Nuclear Information System (INIS)

Souza, Vivianne L.B. de; Nascimento, Rizia K. do; Paiva, Ana Claudia de; Silva, Josenilda M. da; Melo, Jessica V. de

2013-01-01

The aim of this study was to create a methodology for animal tissue analysis, with the use of flame atomic absorption spectrophotometry techniques and graphite furnace analysis to determining metal concentrations in ox kidney. The organ of this animal can be considered a great nutritional food, due to the high protein and micronutrient content beyond the ability to absorb and concentrate important metals such as Zn, Fe, Mn and Se. On the other hand, there is a risk when eating this food owing to the capacity to accumulate toxic metals such as Pb and Cd. In accordance with the laboratory analysis, Zn can be analyzed by flame atomic absorption spectrophotometry, but other metals such as Cu, Mn, Pb and Cd, could only be detected by graphite furnace analysis. The results showed that there is more Zn and Cu than other metals. Such metals follows an order reported by the literature (Zn > Cu > Cd > Pb > Mn). The results showed that kidney is actually a rich source of Zn and Cu. The Cd levels in the ox kidney did not exceed the values which cause toxic effects. The adequacy of the results indicates that the proposed methodology can be used for animal tissue analysis.(author)

Graphite furnace analysis of a series of metals (Cu, Mn, Pb, Zn and Cd) in ox kidney

Energy Technology Data Exchange (ETDEWEB)

Souza, Vivianne L.B. de; Nascimento, Rizia K. do; Paiva, Ana Claudia de; Silva, Josenilda M. da, E-mail: vlsouza@cnen.gov.br, E-mail: riziakelia@hotmail.com, E-mail: acpaiva@cnen.gov.br, E-mail: jmnilda@hotmail.com [Centro Regional de Ciencias Nucleares do Nordeste (CRCN-NE/CNEN-PE), Recife, PE (Brazil); Melo, Jessica V. de, E-mail: Jessica_clorofila@hotmail.com [Universidade de Pernambuco, Recife, PE (Brazil)

2013-07-01

The aim of this study was to create a methodology for animal tissue analysis, with the use of flame atomic absorption spectrophotometry techniques and graphite furnace analysis to determining metal concentrations in ox kidney. The organ of this animal can be considered a great nutritional food, due to the high protein and micronutrient content beyond the ability to absorb and concentrate important metals such as Zn, Fe, Mn and Se. On the other hand, there is a risk when eating this food owing to the capacity to accumulate toxic metals such as Pb and Cd. In accordance with the laboratory analysis, Zn can be analyzed by flame atomic absorption spectrophotometry, but other metals such as Cu, Mn, Pb and Cd, could only be detected by graphite furnace analysis. The results showed that there is more Zn and Cu than other metals. Such metals follows an order reported by the literature (Zn > Cu > Cd > Pb > Mn). The results showed that kidney is actually a rich source of Zn and Cu. The Cd levels in the ox kidney did not exceed the values which cause toxic effects. The adequacy of the results indicates that the proposed methodology can be used for animal tissue analysis.(author)

Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (0 0 1) films

International Nuclear Information System (INIS)

Pechan, Michael J.; Yu, Chengtao; Carr, David; Palmstroem, Chris J.

2005-01-01

Remarkably large, strain-induced anisotropy is observed in the thin-film Heusler alloy Co 2 MnGa. 30 nm Co 2 MnGa (0 0 1) films have been epitaxially grown on different interlayers/substrates with varied strain, and investigated with ferromagnetic resonance. The film grown on ErAs/InGaAs/InP experiences tension strain, resulting in an out-of-plane strain-induced anisotropy (∼1.1x10 6 erg/cm 3 ) adding to the effects of shape anisotropy. In contrast, the film grown on ScErAs/GaAs, experiences a compression strain, resulting in an out-of-plane strain-induced anisotropy (∼3.3x10 6 erg/cm 3 ) which almost totally cancels the effects of shape anisotropy, thus rendering the film virtually isotropic. This results in the formation of stripe domains in remanence. In addition, small, but well-defined 2-fold and 4-fold in-plane anisotropy coexist in each sample with weak, but interesting strain dependence. Transport measurement shows small (<1%) magnetoresistance effects in the compression film, but negligible magnetoresistance in the relaxed and tension strained samples

Magnetic Susceptibility of liquid Gd-NM (NM = Cu, Ga, Ge alloys

Directory of Open Access Journals (Sweden)

Shimakura Hironori

2017-01-01

Full Text Available For rare earth alloys, the indirect interaction of RKKY is at work between rare-earth atoms. Therefore, the magnetism of them depends on the number of conduction electrons and the distance between rare-earth metals. In this work, to reveal the relationship between the number of conduction electrons and magnetic property of rare earth metal alloys, magnetic susceptibility measurements for liquid Gd-NM (NM = Cu, Ga, Ge was performed by Faraday method. As the results, it was observed that the sign of paramagnetic Curie temperature of Cu-Gd alloys are positive at all composition, while Ga-Gd and Ge-Gd alloys show negative paramagnetic Curie temperature at certain composition. Moreover, it was indicated when the alloy at certain composition shows highest melting temperature, it has the lowest paramagnetic Curie temperature.

Development of medical guide wire of Cu-Al-Mn-base superelastic alloy with functionally graded characteristics.

Science.gov (United States)

Sutou, Yuji; Omori, Toshihiro; Furukawa, Akihisa; Takahashi, Yukinori; Kainuma, Ryosuke; Yamauchi, Kiyoshi; Yamashita, Shuzo; Ishida, Kiyohito

2004-04-15

A new type of medical guide wire with functionally graded hardness from the tip to the end was developed with the use of Cu-Al-Mn-based alloys. The superelasticity (SE) of the Cu-Al-Mn-based alloys in the tip is drastically improved by controlling the grain size, whereas the end of the wire is hardened using bainitic transformation by aging at around 200-400 degrees C. Therefore, the tip of the guide wire shows a superelasticity and its end has high stiffness. This guide wire with functionally graded characteristics shows excellent pushability and torquability, superior to that of the Ni-Ti guide wire. Copyright 2004 Wiley Periodicals, Inc.

Electro-chemical development of CuInGaSe2-based photovoltaic solar cells

Science.gov (United States)

Tolan, Gavin James

The aim of this work was to make low cost, high efficiency, graded bandgap, thin film CuInGaSe2 solar cells by electrodeposition, using novel device designs proposed by Dharmadasa et al. These new designs were first experimentally tested using well researched GaAs and AlxGa(1-x)As materials grown using MOCVD, these ideas were then transferred to electrodeposited CuInGaSe2.New designs of graded bandgap solar cells based on p-type window materials, using the well researched GaAs and AlxGa(1-x)As alloy system, have been experimentally tested. The size of the cell was gradually scaled up from 0.5 mm diameter (0.002 cm2) to 3x3 mm2 (0.090 cm2) and to 5x5 mm2 (0.250 cm2), these were then assessed using I-V and QE techniques. The devices showed Voc in the range of 1070-1175 mV, exceeding reported values, FF in the range 0.80-0.87, and Jsc in the range 11-12 mA cm-2. The reason for the low current density was believed to be due to the GaAs capping layer used in the device, which acted as a filter. To confirm this, a second set of devices was fabricated, replacing the GaAs cap with GaAlP, this increased the Jsc to 14 mA cm-2, Voc and FF remained the same.New PV device structures based on CuInGaSe2 starting from the front contact, instead of the conventional Mo back contact, have been grown by electrodeposition from aqueous solutions using a single bath. In order to investigate the effect of bath concentrations on the film properties, 3 different bath concentrations were used. PEC was used to determine the electrical conduction of these layers, and it was found that it was possible to grow p+, p, i, n, n+ layers by changing the deposition voltage. XRF was used to determine the stoichiometry of the corresponding layers, and XRD to investigate the bulk structure. The morphological properties were studied using AFM and SEM. A four-layer n-n-i-p solar cell structure was initially fabricated and I-V measurements were carried out to assess the devices. The devices were PV active

The improvement of the superconducting Y-Ba-Cu-O magnet characteristics through shape recovery strain of Fe-Mn-Si alloys

International Nuclear Information System (INIS)

Shimpo, Y.; Seki, H.; Wongsatanawarid, A.; Taniguchi, S.; Maruyama, T.; Kurita, T.; Murakami, M.

2010-01-01

Since bulk Y-Ba-Cu-O superconductors are brittle ceramics, reinforcement of mechanical properties is important for practical applications. It has been reported that bulk Y-Ba-Cu-O can be reinforced with Al or Fe based alloy ring, in that compression force acts on bulk Y-Ba-Cu-O due to a difference in thermal expansion coefficients. However, the shrinkage of the metal ring was not so large, and therefore careful adjustment of the circumference of the bulk and the metal rings was necessary. In this study, we employed Fe-Mn-Si shape memory alloy rings to reinforce bulk Y-Ba-Cu-O. The advantage of the shape memory alloy is that the shrinkage can take place on heating, and furthermore, the alloy shrinks and compresses the bulk body on cooling. Bulk Y-Ba-Cu-O superconductor 22.8 mm in diameter was inserted in a Fe-Mn-Si ring 23.0 mm in inner diameter at room temperature. Beforehand, the Fe-Mn-Si ring was expanded by 12% strain at room temperature. Then the composite was heated to 673 K. At room temperature, the Fe-Mn-Si ring firmly gripped the bulk superconductor. We then measured trapped fields before and after the ring reinforcement, and found that the trapped field was improved through the treatment.

Direct observation of magnetic domains by Kerr microscopy in a Ni-Mn-Ga magnetic shape-memory alloy

Czech Academy of Sciences Publication Activity Database

Perevertov, Oleksiy; Heczko, Oleg; Schaefer, R.

2017-01-01

Roč. 95, č. 14 (2017), s. 1-5, č. článku 144431. ISSN 2469-9950 R&D Projects: GA ČR GA15-00262S Institutional support: RVO:68378271 Keywords : shape memory * magnetic domains * Kerr microscopy * N-Mn-Ga alloy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

Influence of indium/gallium gradients on the Cu(In,Ga)Se{sub 2} devices deposited by the co-evaporation without recrystallisation

Energy Technology Data Exchange (ETDEWEB)

Drobiazg, Tomasz, E-mail: drobiazg@if.pw.edu.pl [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS-UMR 6502, 2, rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France); Arzel, Ludovic [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS-UMR 6502, 2, rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France); Dönmez, Adem [Faculty of Science, Department of Physics, Muğla Sıtkı Koçman University, 48000, Muğla (Turkey); Zabierowski, Paweł [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Barreau, Nicolas [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS-UMR 6502, 2, rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France)

2015-05-01

In the laboratory scale, cells based on Cu(In,Ga)Se{sub 2} grown by the 3-stage process reach the best performance because of high open-circuit voltage and short-circuit current (V{sub OC}-J{sub SC}) combination. One of the reasons for that could be the V-shaped gradient of Ga to In atomic ratio throughout the Cu(In,Ga)Se{sub 2} layer, which results from large differences in the diffusion coefficients of In and Ga. The location of the lowest Ga-content in the Cu(In,Ga)Se{sub 2} (i.e. Ga notch), also corresponds to the Cu-poor to Cu-rich transition during the 2nd stage. Since this transition is associated to a phenomenon of recrystallisation, the arising question is whether high V{sub OC}-J{sub SC} combination is effectively inherent to V-shaped gradient or to recrystallisation. In our work we attempt to eliminate the influence of recrystallisation to exclusively study the influence of Ga/In gradients. Our approach was to co-evaporate samples by the one-step process with different gradients by the continuous modification of In and Ga fluxes during the deposition and keeping constant that of Cu in a way that its ratio to group III elements was 0.9. With this method, we could obtain a set of Cu(In,Ga)Se{sub 2} layers either free of gradient, with linear gradient (i.e. no notch) or V-shaped gradient with notch at a different distance from the Cu(In,Ga)Se{sub 2} surface. We observe that depending on the presence of notch in conduction band or the position of notch it is possible to modify the impact of secondary barriers on current-voltage characteristics. - Highlights: • Investigation of the indium and gallium gradients apart from the recrystallisation • Short-circuit current and open-circuit voltage benefit from the band gap gradient. • Constant band gap gradient decreases the influence of secondary barriers. • With the presence of gallium notch the secondary barriers are more pronounced.

Direct determination of Cu, Mn, Pb, and Zn in beer by thermospray flame furnace atomic absorption spectrometry

International Nuclear Information System (INIS)

Nascentes, Clesia C.; Kamogawa, Marcos Y.; Fernandes, Kelly G.; Arruda, Marco A.Z.; Nogueira, Ana Rita A.; Nobrega, Joaquim A.

2005-01-01

In this work, thermospray flame furnace atomic absorption spectrometry (TS-FF-AAS) was employed for Cu, Mn, Pb, and Zn determination in beer without any sample digestion. The system was optimized and calibration was based on the analyte addition technique. A sample volume of 300 μl was introduced into the hot Ni tube at a flow-rate of 0.4 ml min -1 using 0.14 mol l -1 nitric acid solution or air as carrier. Different Brazilian beers were directly analyzed after ultrasonic degasification. Results were compared with those obtained by graphite furnace atomic absorption spectrometry (GFAAS). The detection limits obtained for Cu, Mn, Pb, and Zn in aqueous solution were 2.2, 18, 1.6, and 0.9 μg l -1 , respectively. The relative standard deviations varied from 2.7% to 7.3% (n=8) for solutions containing the analytes in the 25-50 μg l -1 range. The concentration ranges obtained for analytes in beer samples were: Cu: 38.0-155 μg l -1 ; Mn: 110-348 μg l -1 , Pb: 13.0-32.9 μg l -1 , and Zn: 52.7-226 μg l -1 . Results obtained by TS-FF-AAS and GFAAS were in agreement at a 95% confidence level. The proposed method is fast and simple, since sample digestion is not required and sensitivity can be improved without using expensive devices. The TS-FF-AAS presented suitable sensitivity for determination of Cu, Mn, Pb, and Zn in the quality control of a brewery

Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

KAUST Repository

Yandjah, L.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Ziani, Ahmed

2018-01-01

Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X

Epitaxial growth of chalcopyrite CuInS2 films on GaAs (001) substrates by evaporation method with elemental sources

International Nuclear Information System (INIS)

Nozomu, Tsuboi; Satoshi, Kobayash; Nozomu, Tsuboi; Takashi, Tamogami

2010-01-01

Full text : Ternary chalcopyrite semiconductor CuInS 2 is one of the potential candidates for absorber layers in high-efficiency thin film solar cells due to its direct bandgap Eg of 1.5 eV, which matches with solar spectrum. However, CuInS 2 solar cells face the problem of lower solar conversion efficiency compared with Cu(InGa)Se 2 solar cells. Investigation of fundamental properties of CuInS 2 films is necessary to understand key issues for solar cell performance. Although in bulk CuInS 2 is known to crystallize into chalcopyrite (CH) structure, in thin film other structures such as Cu-Au (CA) and sphalerite (SP) structures may coexist. It was reported epitaxial growth of slightly Cu-rich CuInS 2 films with c-axis orientated CA only and/or with a mixture of a- and c-axes orientated CH structures on GaP (001) at substrate temperature of 500 degrees using the conventional evaporation method with three elemental sources. Successful growth of epitaxial CH structured CuInS 2 were observed for films grown on GaP at 570 degrees with slightly Cu-rich composition. In this paper, CuInS 2 films with various [Cu]/[In] ratios are grown on GaAs(001) substrates, and the composition range in terms of the [Cu]/[In] ratio where epitaxial films with CH structure grow and the structural qualities of the films are discussed in comparison with those on GaP substrates. Films with various ratios of [Cu]/[In]=0.8 ≤1.9 are grown at 500 degrees and 570 degrees using the evaporation system described in our previous reports. Regardless of the substrate temperature, noticeable X-ray diffraction (XRD) peaks of CH structured CuInS 2 phase are observed in slightly Cu-rich films. However, reflection high energy electron diffraction (RHEED) patterns of the slightly Cu-rich films grown at 570 degrees exhibit noticeable spots not only due to the CH structure but also due to the CA structure. The amount of the CA structure is considered to be small because of the absence of the XRD peaks of the CA

Static and dynamic magnetic properties of B2 ordered Co2MnAl film epitaxially grown on GaAs

International Nuclear Information System (INIS)

Liu, Jihong; Qiao, Shuang

2015-01-01

Co 2 MnAl, considering its potential 100% spin polarization and high Curie temperature, is expected to be one of the most promising materials for realizing half metallicity. However, on the premise of high polarization, the optimization of the magnetic damping constant is directly determined the critical current density for spin torque transfer switching and also the stability of spin polarization for spin injection transfer, thus research on damping constant is also very important. In this paper, we have systematically investigated the magnetic damping constant in Co 2 MnAl film epitaxially grown on GaAs(100) substrate by FMR and TR-MOKE measurements, and found that the damping constant of 0.023 extracted by FMR is comparable with that of TR-MOKE at low field. While, considering field-dependent spin orientation, we think that the field-dependent damping constant deduced by TR-MOKE may provide important information for Co 2 MnAl/GaAs heterostructure and its potential application in spintronics. - Graphical abstract: Co 2 MnAl, considering its potential 100% spin polarization and high Curie temperature, is expected to be one of the most promising materials for realizing half metallicity. In this paper, we have successfully grown the B2-ordered Co 2 MnAl film on GaAs (100) substrate and systematically investigated the magnetic damping constant in Co 2 MnAl film epitaxially grown on GaAs(100) substrate by employing both FMR and TR-MOKE measurements. Our results show that the damping constant of 0.023 extracted by FMR is comparable with that of TR-MOKE at low field. However, considering field-dependent spin orientation, we think that the field-dependent damping constant deduced by TR-MOKE may be more useful for Co 2 MnAl/GaAs heterostructure and its possible application in spintronics. - Highlights: • B2 ordered Co 2 MnAl was successfully prepared and studied by LMOKE and ROT-MOKE. • Static magnetic measurements show clear cubic anisotropy with K C of 5.0 × 10 4

Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magneticshape memory effect

Czech Academy of Sciences Publication Activity Database

Heczko, Oleg; Drahokoupil, Jan; Straka, L.

2015-01-01

Roč. 117, č. 17 (2015), "17E703-1"-"17E703-4" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP107/11/0391 Institutional support: RVO:68378271 Keywords : field-induced strain * temperature-dependence * alloy * martensite * Ni 2 MnGa * anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

Determination of the some electronic parameters of nanostructure copper selenide and Cu/Cu3Se2/n-GaAs/In structure

International Nuclear Information System (INIS)

Güzeldir, B.; Sağlam, M.; Ateş, A.; Türüt, A.

2015-01-01

Highlights: • Introducing to a new degree of freedom in the control of effective barrier height by using Cu. • We want to experimentally observe whether or not the diode continues the ideality in the temperature range of 60–400 K. • We have modified the Richardson’s plot using the temperature dependent values of effective area of the patches. - Abstract: The nanostructure copper selenide thin film has been grown on n-type gallium arsenide substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The film has been characterized by X-ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) measurements. X-ray diffraction analysis of the film confirms a polycrystalline with preferred orientation. The AFM and SEM micrographs of the film reveal smooth and uniform surface pattern without any dark pits, pinholes and microcracks. The Cu/Cu 3 Se 2 /n-GaAs/In structure has been thermally formed in evaporating system after the SILAR process. The electrical analysis of Cu/Cu 3 Se 2 /n-GaAs/In structure has been investigated by means of current–voltage (I–V) measurements in the temperature range of 60–400 K in dark conditions. The values of barrier height (BH) and ideality factor (n) ranged from 0.21 eV and 4.97 (60 K) to 0.83 eV and 1.14 (400 K), respectively. In the calculations, the electrical parameters of the experimental forward bias I–V characteristics of the Cu/Cu 3 Se 2 /n-GaAs/In with the homogeneity in the 60–400 K range have been explained by means of the thermionic emission (TE), considering Gaussian distribution (GD) of BH with linear bias dependence