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Sample records for cu ga mn

  1. Intermartensitic transitions in Ni-Mn-Fe-Cu-Ga Heusler alloys

    International Nuclear Information System (INIS)

    Khan, Mahmud; Gautam, Bhoj; Pathak, Arjun; Dubenko, Igor; Stadler, Shane; Ali, Naushad

    2008-01-01

    A series of Fe doped Ni 2 Mn 0.75-x Fe x Cu 0.25 Ga Heusler alloys have been investigated by means of x-ray diffraction, magnetizations, thermal expansion, and electrical resistivity measurements. In Ni 2 Mn 0.75 Cu 0.25 Ga, martensitic and ferromagnetic transitions occur at the same temperature. Partial substitution of Mn by Fe results in a decrease of the martensitic transition temperature, T M , and an increase of the ferromagnetic transition temperature, T C , resulting in separation of the two transitions. In addition to the martensitic transition, complete thermoelastic intermartensitic transformations have been observed in the Fe doped Ni 2 Mn 0.75-x Fe x Cu 0.25 Ga samples with x>0.04. An unusual transition is observed in the alloy with x = 0.04. The magnetization curve as a function of increasing temperature shows only one first-order transition in the temperature range 5-400 K, which is identified as a typical coupled magnetostructural martensitic transformation. The magnetization curve as a function of decreasing temperature shows three different transitions, which are characterized as the ferromagnetic transition, the martensitic transition and the intermartensitic transition.

  2. Enhanced caloric effect induced by magnetoelastic coupling in NiMnGaCu Heusler alloys: Experimental study and theoretical analysis

    Science.gov (United States)

    Zhao, Dewei; Castán, Teresa; Planes, Antoni; Li, Zongbin; Sun, Wen; Liu, Jian

    2017-12-01

    On the basis of a phenomenological Landau model combined with comprehensive experimental studies, the magnetostructural transition behavior and field induced caloric effects for NiMnGaCu Heusler alloys have been investigated. In Ni50Mn25 -xGa25Cux alloys with x =5.5 , 6, and 6.5, both magnetocaloric entropy change (Δ S ) and elastocaloric temperature change (Δ T ) increase with the increment of Cu content. The maximum Δ S of 1.01 J /mol K and Δ T of 8.1 K are obtained for the alloy with x =6.5 . In order to explore the physical origin behind the large caloric effect, here we quantitatively propose a crucial coefficient of magnetoelastic coupling κ ˜ by utilizing a thermodynamic formalism within the framework of the Landau approach. It has been verified that the enhancement of the strength of magnetoelastic coupling between lattice and magnetic freedoms results in the increased caloric response for NiMnGaCu alloys. Thus, the strengthened coupling of the magnetoelastic effect can be considered as an effective way to improve the caloric performance for these alloys having the same sign of magnetic and elastic entropy changes contributed to the total caloric effect.

  3. The effects of small metal additions (Co, Cu, Ga, Mn, Al, Bi, Sn) on the magnetocaloric properties of the Gd5Ge2Si2 alloy

    Czech Academy of Sciences Publication Activity Database

    Shull, R. D.; Provenzano, V.; Shapiro, A. J.; Fu, A.; Lufaso, M. W.; Karapetrova, J.; Kletetschka, Günther; Mikula, V.

    2006-01-01

    Roč. 99, č. 8 (2006), s. 8-8 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z30130516 Keywords : magnetocaloric * (Co, Cu, Ga, Mn, Al, Bi, Sn) additions * Cryogenic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.316, year: 2006

  4. Magnetic properties of Ni-Mn-Ga-Co-Cu tetragonal martensites exhibiting magnetic shape memory effect

    Czech Academy of Sciences Publication Activity Database

    Rameš, Michal; Heczko, Oleg; Sozinov, A.; Ullakko, K.; Straka, Ladislav

    2018-01-01

    Roč. 142, Jan (2018), s. 61-65 ISSN 1359-6462 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : ferromagnetic shape memory alloy * magnetic anisotropy * martensitic phase transformation * Heusler phases * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.747, year: 2016

  5. La0⋅ 9Sr0⋅ 1Ga0⋅ 8M0⋅ 2O3–δ (M= Mn, Co, Ni, Cu or Zn ...

    Indian Academy of Sciences (India)

    Perovskite oxides of the general formula, La0.9Sr0.1Ga0.8M0.2O3– for M = Mn, Co, Ni, Cu and Zn, have been prepared and investigated. All the oxides exhibit high electrical conductivities ( ∼ 10–2 S/cm at 800°C) comparable to that of the best perovskite oxide ion conductor, La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM) ( ...

  6. Order in Cu4Mn

    International Nuclear Information System (INIS)

    Hunter, B.A.; Cussen, L.D.; Kennedy, S.J.; Murani, A.P.; MacA Gray, E.

    2002-01-01

    Full text: Atomic short-range order has been well studied in CuMn alloys using neutron diffraction. It has been shown that the degree of short-range order greatly affect the magnetic properties. A sample of Cu 4 Mn irradiated in a high fast neutron flux has developed long range atomic order as shown by a number of small neutron scattering Bragg peaks. The characteristic (1 1/2 0) diffuse peak has changed shape slightly. There is no observable change in the magnetic diffuse quasi-elastic neutron scattering between scattering vectors of 0.16 and 2.5 Angstroms ∼1

  7. Defect-induced magnetic structure of CuMnSb

    Czech Academy of Sciences Publication Activity Database

    Máca, František; Kudrnovský, Josef; Drchal, Václav; Turek, I.; Stelmakhovych, O.; Beran, Přemysl; Llobet, A.; Martí, Xavier

    2016-01-01

    Roč. 94, č. 9 (2016), 1-9, č. článku 094407. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 ; RVO:61389005 Keywords : CuMnSb * electronic structure * defects * magnetic order * ab initio calculations * neutron diffraction analysis Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  8. Properties of (Ga,Mn)As codoped with Li

    Science.gov (United States)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-01

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  9. Comparing magnetostructural transitions in Ni{sub 50}Mn{sub 18.75}Cu{sub 6.25}Ga{sub 25} and Ni{sub 49.80}Mn{sub 34.66}In{sub 15.54} Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dubenko, Igor [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Granovsky, Alexander [Faculty of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Lahderanta, Erkki [Lappeenranta University of Technology, 53851 (Finland); Kashirin, Maxim; Makagonov, Vladimir [Voronezh State Technical University, Voronezh 394026 (Russian Federation); Aryal, Anil; Quetz, Abdiel; Pandey, Sudip [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Rodionov, Igor [Faculty of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Samanta, Tapas; Stadler, Shane [Department of Physics & Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Mazumdar, Dipanjan, E-mail: dmazumdar@siu.edu [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Ali, Naushad [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States)

    2016-03-01

    The crystal structure, magnetic and transport properties, including resistivity and thermopower, of Ni{sub 50}Mn{sub 18.75}Cu{sub 6.25}Ga{sub 25} and Ni{sub 49.80}Mn{sub 34.66}In{sub 15.54} Heusler alloys were studied in the (10–400) K temperature interval. We show that their physical properties are remarkably different, thereby pointing to different origin of their magnetostructural transition (MST). A Seebeck coefficient (S) was found to pass minimum of about −20 µV/K in respect of temperature for both compounds. It was shown that MST observed for both compounds results in jump-like changes in S for Ga-based compound and jump in resistivity of about 20 and 200 µΩ cm for Ga and In –based compounds, respectively. The combined analyzes of the present results with that from literature show that the density of states at the Fermi level does not change strongly at the MST in the case of Ni–Mn–In alloys as compared to that of Ni–Mn–Ga. - Graphical abstract: Temperature dependencies of resistivity for Ni{sub 50}Mn{sub 18.75}Cu{sub 6.25}Ga{sub 25} and Ni{sub 49.80}Mn{sub 34.66}In{sub 15.54} obtained on heating (open symbols) and cooling (closed symbols). Arrows indicate the temperature of direct (T{sub M}) and inverse (T{sub A}) martensitic transitions and ferromagnetic ordering of the austenitic (T{sub C}) and martensitic (T{sub CM}) phases. The T{sub CM}=T{sub A}/T{sub M} in the case of Ga-based alloy. - Highlights: • Magnetostructural transitions (MST) in two compounds with same parent material. • The figure exemplifies how sensitive MST properties are to the density of states. • Proper understanding is required for utilizing these multifunctional materials.

  10. Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

    CERN Document Server

    AUTHOR|(CDS)2093111; Wahl, Ulrich; Augustyns, Valerie; Silva, Daniel; Granadeiro Costa, Angelo Rafael; Houben, K; Edmonds, Kevin W; Gallagher, BL; Campion, RP; Van Bael, MJ; Castro Ribeiro Da Silva, Manuel; Martins Correia, Joao; Esteves De Araujo, Araujo Joao Pedro; Temst, Kristiaan; Vantomme, André; Da Costa Pereira, Lino Miguel

    2015-01-01

    We determined the lattice location of Mn in ferromagnetic (Ga,Mn)As using the electron emission channeling technique. We show that interstitial Mn occupies the tetrahedral site with As nearest neighbors (TAs) both before and after thermal annealing at 200 °C, whereas the occupancy of the tetrahedral site with Ga nearest neighbors (TGa) is negligible. TAs is therefore the energetically favorable site for interstitial Mn in isolated form as well as when forming complexes with substitutional Mn. These results shed new light on the long standing controversy regarding TAs versus TGa occupancy of interstitial Mn in (Ga,Mn)As.

  11. Magnetic anisotropy in GaMnAs; Magnetische Anisotropie in GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim

    2009-07-02

    The goal of the present work was the detailed investigation of the impact of parameters like vertical strain, hole concentration, substrate orientation and patterning on the MA in GaMnAs. At first a method is introduced enabling us to determine the MA from angle-dependent magnetotransport measurements. This method was used to analyze the impact of vertical strain {epsilon}{sub zz} on the MA in a series of GaMnAs layers with a Mn content of 5% grown on relaxed InGaAs-templates. While hole concentration and Curie temperature were found to be unaffected by vertical strain, a significant dependence of the MA on {epsilon}{sub zz} was found. The most pronounced dependence was observed for the anisotropy parameter B{sub 2} {sub perpendicular} {sub to}, representing the intrinsic contribution to the MA perpendicular to the layer plane. For this parameter a linear dependence on {epsilon}{sub zz} was found, resulting in a strain-induced transition of the magnetic easy axis with increasing strain from in-plane to out-of-plane at {epsilon}{sub zz} {approx} -0.13%. Post-growth annealing of the samples leads to an outdiffusion and/or regrouping of the highly mobile Mn interstitial donor defects, resulting in an increase in both p and T{sub C}. For the annealed samples, the transition from in-plane to out-of-plane easy axis takes place at {epsilon}{sub zz} {approx} -0.07%. From a comparison of as-grown and annealed samples, B{sub 2} {sub perpendicular} {sub to} was found to be proportional to both p and {epsilon}{sub zz}, B{sub 2} {sub perpendicular} {sub to} {proportional_to} p .{epsilon}{sub zz}. To study the influence of substrate orientation on the magnetic properties of GaMnAs, a series of GaMnAs layers with Mn contents up to 5% was grown on (001)- and (113)A-oriented GaAs substrates. The hole densities and Curie temperatures, determined from magnetotransport measurements, are drastically reduced in the (113)A layers. The differences in the magnetic properties of (113)A- and

  12. Epitaxy of (Ga,Mn)As; Epitaxie von (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Utz, Martin

    2012-09-14

    The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux calibration. Also the most important methods for the electrical characterization of GaMnAs are discussed in a critical manner by showing that the anomalous Hall Effect contributes significantly to the Hall resistance even at room temperature and that Novak's method for the termination of the Curie-temperature provides correct values for layers with low defect concentration. Furthermore it is reported on the considerable enlargement of the useable parameter space of GaMnAs which was enabled by the enhanced control over the growth process: It was possible to grow layers with a very high Manganese content of 22% and Curie temperatures of 172 K and even once were produced which showed a strong magnetic moment despite an insulating behaviour at low temperatures. A last key aspect is the growth and characterization of ultra-thin GaMnAs layers, giving prospects for gating experiments or experiments on the proximity effect as these layers combine high Curie temperatures with insulating behaviour.

  13. Composition and temperature dependence of twinning stress in non-modulated martensite of Ni-Mn-Ga-Co-Cu magnetic shape memory alloys

    Czech Academy of Sciences Publication Activity Database

    Soroka, A.; Sozinov, A.; Lanska, N.; Rameš, Michal; Straka, Ladislav; Ullakko, K.

    2018-01-01

    Roč. 144, Feb (2018), s. 52-55 ISSN 1359-6462 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : Heusler phases * martensite * ferromagnetic shape memory alloy * magnetic shape memory * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.747, year: 2016

  14. Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Lima, T. A. L.; Augustyns, V.; Temst, K.; Vantomme, A.; Pereira, L. M. C., E-mail: lino.pereira@fys.kuleuven.be [KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven (Belgium); Wahl, U.; Costa, A.; Correia, J. G. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém (Portugal); Silva, D. J.; Araújo, J. P. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto (Portugal); Houben, K.; Van Bael, M. J. [Laboratory of Solid-State Physics and Magnetism, KU Leuven, 3001 Leuven (Belgium); Edmonds, K. W.; Gallagher, B. L.; Campion, R. P. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Silva, M. R. da [Centro de Física Nuclear, Universidade de Lisboa, Lisboa 1649-003 (Portugal)

    2015-01-05

    We determined the lattice location of Mn in ferromagnetic (Ga,Mn)As using the electron emission channeling technique. We show that interstitial Mn occupies the tetrahedral site with As nearest neighbors (T{sub As}) both before and after thermal annealing at 200 °C, whereas the occupancy of the tetrahedral site with Ga nearest neighbors (T{sub Ga}) is negligible. T{sub As} is therefore the energetically favorable site for interstitial Mn in isolated form as well as when forming complexes with substitutional Mn. These results shed new light on the long standing controversy regarding T{sub As} versus T{sub Ga} occupancy of interstitial Mn in (Ga,Mn)As.

  15. Diffusion of $^{52}$Mn in GaAs

    CERN Multimedia

    2002-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

  16. Element specific investigation of ultrathin Co2MnGa/GaAs heterostructures

    DEFF Research Database (Denmark)

    Claydon, Jill S.; Hassan, Sameh; Damsgaard, Christian Danvad

    2007-01-01

    We have used x-ray magnetic circular dichroism to study the element specific magnetic properties of ultrathin films of the Heusler alloy Co2MnGa at room temperature. Nine films were grown by molecular beam epitaxy on GaAs substrates and engineered to vary in stoichiometry as Co1.86Mn0.99Ga1, Co1...

  17. Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate

    Science.gov (United States)

    Matsukura, Fumihiro; Ohno, Hideo

    2015-09-01

    We measure the temperature dependence of the lattice parameter of (Ga,Mn)As by X-ray diffraction. The result shows that the lattice parameter of (Ga,Mn)As shows similar temperature dependence to that of GaAs, and no obvious change is observed in the vicinity of its Curie temperature.

  18. Inverse spin Hall effect in Pt/(Ga,Mn)As

    Science.gov (United States)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 1019 m-2, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  19. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  20. Room-temperature antiferromagnetism in CuMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Maca, F.; Masek, J. [Institute of Physics ASCR, v.v.i., Na Slovance 2, 182 21 Praha 8 (Czech Republic); Stelmakhovych, O. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Marti, X. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic); Reichlova, H. [Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic); Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Uhlirova, K. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Beran, P. [Nuclear Physics Institute ASCR, v.v.i., 250 68 Rez (Czech Republic); Wadley, P.; Novak, V. [Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic); Jungwirth, T., E-mail: jungw@fzu.cu [Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic); School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2012-04-15

    We report on an experimental and theoretical study of CuMn-V compounds. In agreement with previous works we find low-temperature antiferromagnetism with Neel temperature of 50 K in the cubic half-Heusler CuMnSb. We demonstrate that the orthorhombic CuMnAs is a room-temperature antiferromagnet. Our results are based on X-ray diffraction, magnetization, transport, and differential thermal analysis measurements, and on density-functional theory calculations of the magnetic structure of CuMn-V compounds. In the discussion part of the paper we make a prediction, based on our density-functional theory calculations, that the electronic structure of CuMn-V compounds makes a transition from a semimetal to a semiconductor upon introducing the lighter group-V elements. - Highlights: Black-Right-Pointing-Pointer We report experimental observation of high temperature antiferromagnetism in CuMnAs. Black-Right-Pointing-Pointer The physical origin of the observation is discussed based on ab initio calculations. Black-Right-Pointing-Pointer We predict semimetal to semiconductor transition of the electronic structure of CuMn-V compounds. Black-Right-Pointing-Pointer We discuss the relevance of CuMn-V compounds for antiferromagnetic spintronics.

  1. Spin correlations in Ni-Mn-Ga

    CERN Document Server

    Runov, V V; Runova, M K; Gavrilyuk, V; Glavatskaya, N I

    2001-01-01

    The results of measuring the neutrons low-angle scattering and depolarization in the Ni sub 4 sub 9 sub . sub 1 Mn sub 2 sub 9 sub . sub 4 Ga sub 2 sub 1 sub . sub 5 monocrystal within the range of the 15 < T < 400 K temperatures and 0 < H < 4.5 kE magnetic fields are presented. The characteristic temperatures of the alloy T sub c = 373.7 K and the martensite transition T sub m = 301-310 K are determined. The temperature dependences of the scattering parameters are obtained. The left-right asymmetry in scattering the neutrons, polarized according to and against the applied field at 150 < T < T sub m , conditioned by the neutrons inelastic magnetic interaction in the sample is identified. The problem on the alloy magnetization near T sub m , critical scattering at T approx = T sub c , scattering anomalies and magnetic excitations moderation at 150 < T < T sub m are discussed

  2. Spectral analysis of Cu 2+ and Mn 2+ ions doped ...

    Indian Academy of Sciences (India)

    We report here on the development and spectral analysis of Cu2+ (0.5 mol%) and Mn2+ (0.5 mol%) ions doped in two new series of glasses. The visible absorption spectra of Cu2+ and Mn2+ glasses have shown broad absorption bands at 820 nm and 495 nm, respectively. For Cu2+ BFP glasses, excitation at 380 nm, ...

  3. Dislocation mechanism of twinning in Ni-Mn-Ga

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Ge, Y.; Gemperlová, Juliana; Gemperle, Antonín; Hannula, S.-P.

    2012-01-01

    Roč. 5, č. 1 (2012), "1250006-1"-"1250006-4" ISSN 1793-6047 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391; GA AV ČR IAA100100920 Institutional research plan: CEZ:AV0Z10100520 Keywords : Ni-Mn-Ga shape memory alloy * martensitic transformation * in situ TEM straining Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.270, year: 2012

  4. Spectral analysis of Cu and Mn ions doped borofluorophosphate ...

    Indian Academy of Sciences (India)

    WINTEC

    2+ doped BFP glasses have pink colour. Figures 1–4 present photographs of both reference and. Figure 1. Photographs of reference and Cu. 2+. : borofluoro- phosphate glasses. Figure 2. Photographs of reference and Cu. 2+. : borofluoro- phosphate glasses. 0⋅5 mol% Cu. 2+ and Mn. 2+ ions doped borofluorophosphate.

  5. Magnetic anisotropies of (Ga,Mn)As films and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Frank

    2011-02-02

    In this work the magnetic anisotropies of the diluted magnetic semiconductor (Ga,Mn)As were investigated experimentally. (Ga,Mn)As films show a superposition of various magnetic anisotropies which depend sensitively on various parameters such as temperature, carrier concentration or lattice strain. However, the anisotropies of lithographically prepared (Ga,Mn)As elements differ significantly from an unpatterned (Ga,Mn)As film. In stripe-shaped structures this behaviour is caused by anisotropic relaxation of the compressive lattice strain. In order to determine the magnetic anisotropies of individual (Ga,Mn)As nanostructures a combination of ferromagnetic resonance and time-resolved scanning Kerr microscopy was employed in this thesis. In addition, local changes of the magnetic anisotropy in circular and rectangular structures were visualized by making use of spatially resolved measurements. Finally, also the influence of the laterally inhomogeneous magnetic anisotropies on the static magnetic properties, such as coercive fields, was investigated employing spatially resolved static MOKE measurements on individual (Ga,Mn)As elements. (orig.)

  6. Magnetic coupling in Fe/(Ga,Mn)As based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sperl, M.; Soda, M.; Eigenmann, F.; Utz, M.; Woltersdorf, G.; Bougeard, D.; Back, C.H. [Institut fuer Experimentelle Physik, Universitaet Regensburg, D-93040 Regensburg (Germany); Torelli, P.; Panaccione, G. [Laboratorio Nazionale TASC, INFM-CNR, in Area Science Park, S.S. 14, Km 163.5, I-34012 Trieste (Italy); Polesya, S. [Department of Chemistry, Ludwig-Maximilians University Munich (Germany)

    2011-07-01

    (Ga,Mn)As is one of the most promising diluted magnetic semiconductors (DMS) for spintronics due to the compatibility with the GaAs MBE technology. Despite the promising features (Ga,Mn)As has a Curie temperature well below room temperature limiting its possible applications. One potential direction to tailor novel properties of DMS thus making integration in real devices feasible is to exploit interface effects in highly controlled heterostructures (HS). Following this route FM behaviour of Mn at room temperature in both epitaxial and non-epitaxial Fe/(Ga,Mn)As interfaces has been demonstrated. We report results obtained with Synchrotron Radiation techniques, where we were able to monitor the evolution of the magnetic coupling between Fe and Mn as a function of Mn doping, temperature and thickness. In particular, XMCD experiments show a peculiar thickness dependence of the room temperature magnetic coupling between Fe and Mn, namely a switching from antiparallel to parallel, thus opening the possibility of controlling the magnetization state of the interface.

  7. Local Structure and Magnetism of (Ga,Mn)As

    CERN Document Server

    AUTHOR|(CDS)2093111; Temst, Kristiaan

    Throughout the years, dilute magnetic semiconductors (DMS) have emerged as promising materials for semiconductor-based spintronics. In particular, (Ga,Mn)As has become the model system in which to explore the physics of carrier-mediated ferromagnetism in semiconductors and the associated spintronic phenomena, with a number of interesting functionalities and demonstrated proof-of-concept devices. It constitutes the perfect example of how the magnetic behavior of DMS materials is strongly influenced by local structure. In this thesis, we address key aspects of the interplay between local structure and ferromagnetism of (Ga,Mn)As. We unambiguously identify the lattice site occupied by interstitial Mn as the tetrahedral interstitial site with As nearest neighbors T(As). We show, furthermore, that the T(As) is the most energetically favorable site regardless of the interstitial atom forming or not complexes with substitutional Mn. We also evaluate the thermal stability of both interstitial and substitutional Mn si...

  8. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  9. Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures

    International Nuclear Information System (INIS)

    Kong, X.; Trampert, A.; Guo, X.X.; Kolovos-Vellianitis, D.; Daeweritz, L.; Ploog, K.H.

    2005-01-01

    We report on the microstructure of (Ga,Mn)As digital ferromagnetic heterostructures grown on GaAs (001) substrates by low-temperature molecular-beam epitaxy. The Mn concentration and the As 4 /Ga beam equivalent pressure (BEP) ratio are varied in the samples containing periods of Mn sheets separated by thin GaAs spacer layers. Transmission electron microscopy studies reveal that decreasing the Mn doping concentration and reducing the BEP ratio lead to smaller composition fluctuations of Mn and more homogeneous (Ga,Mn)As layers with abrupt interfaces. Planar defects are found as the dominant defect in these heterostructures and their density is related to the magnitude of the composition fluctuation. These defects show a noticeable anisotropy in the morphologic distribution parallel to the orthogonal [110] and [110] direction. Along the [110] direction, they are stacking faults, which are preferentially formed in V-shaped pairs and nucleate at the interfaces between (Ga,Mn)As and GaAs layers. Along the [110] direction, the planar defects are isolated thin twin lamellae. The character of the planar defects and their configuration are analyzed in detail

  10. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

    Science.gov (United States)

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-02-01

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of -5erg/cm2. This work proposes a novel p-MTJ structure for the future STT-MRAM progress.

  11. Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer

    Science.gov (United States)

    Niazi, T.; Cormier, M.; Lucot, D.; Largeau, L.; Jeudy, V.; Cibert, J.; Lemaître, A.

    2013-03-01

    We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy are controlled by the gate voltage of a field effect device. Anomalous Hall effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ˜4 over the explored gate-voltage range so that the transition to an out-of-plane easy-axis configuration is almost reached.

  12. One-pot synthesis of an Mn(III)–Cu(II)–Mn(III) trinuclear ...

    Indian Academy of Sciences (India)

    MnIII. (salph)(H2O)}2{CuII(mnt)2}] complexes lead ... precursor to achieve a new multi-metallic heteronu- clear system. In the present contribution, .... weak bond to S1 (the average Mn–S distance is. 2⋅923 Å) from [Cu(mnt)]2– anion. Thus, in ...

  13. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  14. Oriented Mn-doped CuO nanowire arrays

    Science.gov (United States)

    Han, Dongqiang; Wu, Zhaofeng; Wang, Zhihe; Yang, Shaoguang

    2016-04-01

    Using anodic aluminum oxide membranes as the nanoreactors and controller, oriented nanowire arrays of the diluted magnetic semiconductor Mn-doped CuO have been successfully fabricated using Mn(NO3)2 · 4H2O and Cu(NO3)2 · 3H2O as the starting materials. X-ray diffraction measurements showed that the as-prepared oriented nanowire arrays are of high purity. Scanning electron microscope and transmission electron microscope studies showed the nanowires are oriented, continuous and uniform with a diameter and length of about 170 nm and several tens of micrometers, respectively, and thus of a high aspect ratio. Low-temperature magnetic measurements showed the ferromagnetic property of the oriented Mn-doped CuO nanowire arrays with the critical temperature at around 80 K, which will endow them with great potential applications in spintronics in the future.

  15. Physical properties of the tetragonal CuMnAs: A first-principles study

    Czech Academy of Sciences Publication Activity Database

    Máca, František; Kudrnovský, Josef; Drchal, Václav; Carva, K.; Baláž, P.; Turek, I.

    2017-01-01

    Roč. 96, č. 9 (2017), s. 1-8, č. článku 094406. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Grant - others:GA MŠk(CZ) LM2015042 Institutional support: RVO:68378271 Keywords : first- principles calculations * defects * CuMnAs * transport properties Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  16. Magnetic excitations in CuMn spin-glass alloys

    International Nuclear Information System (INIS)

    Tsunoda, Y.; Kunitomi, N.; Cable, J.W.

    1985-01-01

    Recent neutron scattering measurements have helped to clarify two important features of CuMn spin glasses. Murani and co-workers have studied the dynamical behavior of spin-glass systems and have observed characteristic ferromagnetic spin correlations with a broad distribution of relaxation times and a dynamical freezing process. By means of the polarization analysis technique, Cable and co-workers have observed the coexistence of two types of magnetic short-range order (MSRO): one is a modulated-spin structure, and the other is a ferromagnetic cluster associated with the atomic short-range order (ASRO). These ordered regions produce diffraction maxima which are found at the (1 1/2 +/- delta 0) and the (1 1/2 0) reciprocal lattice points, respectively. Both of these observations seem to be essential for understanding the CuMn spin-glass system. However, the physical relationship of these properties is not yet understood. The authors have studied the inelastic scattering of neutrons around the magnetic diffuse peak positions of a Cu/sub 78.7/Mn/sub 21.3/ single crystal. The spin-glass freezing temperature of a CuMn alloy with this Mn concentration is estimated to be T/sub f/ approx. 90 K. Most of the data were taken by scanning along the [0 1 0] direction from the (1 0 0) to the (1 1 0) reciprocal lattice points

  17. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    Energy Technology Data Exchange (ETDEWEB)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

    2009-05-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

  18. Phase stability of CuAlMn shape memory alloys

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Novák, Václav

    2004-01-01

    Roč. 378, - (2004), s. 216-221 ISSN 0921-5093 Institutional research plan: CEZ:AV0Z1010914 Keywords : CuAlMn * shape memory alloys * martensitic transformation * - stress -strain tests * tension-compression cycling * history dependent phenomena Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.445, year: 2004

  19. Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

    OpenAIRE

    Qian, Suxin; Geng, Yunlong; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

    2016-01-01

    This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hystere...

  20. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Dorokhin, M. V., E-mail: dorokhin@nifti.unn.ru [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Pavlov, D. A.; Bobrov, A. I. [Lobachevsky State University, Physical Department (Russian Federation); Danilov, Yu. A.; Lesnikov, V. P.; Zvonkov, B. N.; Zdoroveyshchev, A. V. [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Kudrin, A. V. [Lobachevsky State University, Physical Department (Russian Federation); Demina, P. B. [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Usov, Yu. V.; Nikolichev, D. E.; Kryukov, R. N.; Zubkov, S. Yu. [Lobachevsky State University, Physical Department (Russian Federation)

    2016-11-15

    The crystal structure, composition, and magnetic, and electric-transport properties of Mn{sub x}Ga{sub y} layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn{sub x}Ga{sub y}/GaAs diode structure, in particular, the height of the Schottky diode potential barrier.

  1. Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictions

    Science.gov (United States)

    Schlapps, Markus; Geissler, Stefan; Lermer, Teresa; Sadowski, Janusz; Wegscheider, Werner; Weiss, Dieter

    2010-09-01

    We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction.

  2. Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

    OpenAIRE

    Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

    2011-01-01

    We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

  3. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  4. Inverse magnetocaloric effect in Mn2NiGa and Mn1.75Ni1.25Ga magnetic shape memory alloys

    International Nuclear Information System (INIS)

    Singh, Sanjay; Barman, S. R.; Esakki Muthu, S.; Arumugam, S.; Senyshyn, A.; Rajput, P.; Suard, E.

    2014-01-01

    Inverse magnetocaloric effect is demonstrated in Mn 2 NiGa and Mn 1.75 Ni 1.25 Ga magnetic shape memory alloys. The entropy change at the martensite transition is larger in Mn 1.75 Ni 1.25 Ga, and it increases linearly with magnetic field in both the specimens. Existence of inverse magnetocaloric effect is consistent with the observation that magnetization in the martensite phase is smaller than the austenite phase. Although the Mn content is smaller in Mn 1.75 Ni 1.25 Ga, from neutron diffraction, we show that the origin of inverse magnetocaloric effect is the antiferromagnetic interaction between the Mn atoms occupying inequivalent sites

  5. The Paramagnetism of Small Amounts of Mn Dissolved in Cu-Al and Cu-Ge Alloys

    International Nuclear Information System (INIS)

    Myers, H.P.; Westin, R.

    1963-06-01

    Previous measurements of the valency of Mn in Cu-Zn alloys have been confirmed by measurements with the isoelectronic Cu-Al and Cu-Ge alloys as matrices for Mn. The valency, having the value i in pure copper, decreases slightly with increasing electron to atom ratio attaining the values 0. 9 and 0. 8 at the limiting composition in the Al and Ge alloys respectively. The apparent size of Mn in these alloys is discussed

  6. Anisotropic magnetoresistance components in (Ga,Mn)As.

    Science.gov (United States)

    Rushforth, A W; Výborný, K; King, C S; Edmonds, K W; Campion, R P; Foxon, C T; Wunderlich, J; Irvine, A C; Vasek, P; Novák, V; Olejník, K; Sinova, Jairo; Jungwirth, T; Gallagher, B L

    2007-10-05

    We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

  7. Magnetic anisotropy of nonmodulated Ni-Mn-Ga martensite revisited

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Straka, L.; Novák, Václav; Fähler, S.

    2010-01-01

    Roč. 107, č. 9 (2010), 09A914/1-09A914/3 ISSN 0021-8979 Grant - others:AV ČR(CZ) M100100913 Institutional research plan: CEZ:AV0Z10100520 Keywords : magnetic anisotropy of non-modulated martensite * temperature dependence of anisotropy * Ni-Mn-Ga * adaptive martensite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.064, year: 2010 http://jap.aip.org/resource/1/japiau/v107/i9/p09A914_s1

  8. Large energy absorption in Ni-Mn-Ga/polymer composites

    International Nuclear Information System (INIS)

    Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M.

    2005-01-01

    Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples

  9. CuGaTe2-CuAlTe2 system

    International Nuclear Information System (INIS)

    Bodnar', I.V.

    2003-01-01

    The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

  10. Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD

    Directory of Open Access Journals (Sweden)

    Budi Mulyanti

    2008-09-01

    Full Text Available In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which in turn reduce the growth temperature. Trimethylgallium (TMGa, nitrogen (N2 and cyclopentadienyl manganese tricarbonyl (CpMnT were used as a source of Ga, N and Mn, respectively, while hydrogen gas was used as a carrier gas for both TMGa and CpMnT. The effect of growth temperature and Mn incorporation on structural properties and surface morphology of GaN:Mn films are presented. The growth of GaN:Mn thin films were conducted at varied growth temperature in range of 625 oC to 700 oC and the Mn/Ga molar fraction in the range of 0.2 to 0.5. Energy dispersive of X-ray (EDX and X-ray diffraction (XRD methods were used to analyze atomic composition and crystal structure of the grown films, respectively. The surface morphology was then characterized using both atomic force microscopy (AFM and scanning electron microscopy (SEM images. A systematic XRD analysis reveal that maximum Mn incorporation that still produces single phase GaN:Mn (0002 is 6.4 % and 3.2 % for the film grown at 650 oC and 700 oC, respectively. The lattice constant and full width at half maximum (FWHM of the single phase films depend on the Mn concentration. The decrease in lattice constant accompanied by the increase in FWHM is due to incorporation of substitutional Mn on the Ga sub-lattice. The maximum values of doped Mn atoms incorporated in the wurtzite structure of GaN:Mn as substitutional atoms on Ga sub-lattice are 2.0 % and 2.5 % at 650 oC and 700 oC, respectively. AFM and SEM images show that the film grown at lower growth temperature and Mn concentration has a better surface than that of film grown at higher growth temperature and Mn concentration.

  11. Photoluminescence and ultrafast spectroscopy on GaAs quantum wells close to a GaMnAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Robert; Korn, Tobias; Maurer, Andreas; Stich, Dominik; Wurstbauer, Ursula; Schuh, Dieter; Wegscheider, Werner; Schueller, Christian [Institut fuer Experimentelle und Angewandte Physik II, Universitaet Regensburg, 93040 Regensburg (Germany)

    2007-07-01

    We study nonmagnetic GaAs quantum wells (QW) embedded in an AlGaAs/GaAs heterostructure close to a ferromagnetic GaMnAs layer. We present photoluminescence (PL) data of two QWs at different distances to the GaMnAs layer measured at 4 K: one QW is close (3 to 10 nm) to the GaMnAs layer, the other one is 120 nm away and used as a reference. The PL signal of the QW close to the Ga(Mn)As layer shows a significant broadening and quenching depending on the barrier width. This may be due to two effects: (i) Backdiffusion of Mn through the barrier into the upper QW during sample growth. (ii) Tunnelling of photoexcited charge carriers through the barrier into the low-bandgap Ga(Mn)As layer. Additionally, time-resolved pump-probe experiments show that the carrier lifetime in the upper QW in comparison with the reference QW is significantly reduced. In contrast, the spin lifetime is four times larger, which we attribute to the D'Yakonov-Perel mechanism: Mn ions within the upper QW act as momentum scattering centers und thus increase the spin lifetime.

  12. Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

    Directory of Open Access Journals (Sweden)

    M. Ciorga

    2011-06-01

    Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

  13. Spin injection from Co2MnGa into an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.

    2008-01-01

    We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin...... lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency...

  14. Preparation of melt textured Ni-Mn-Ga

    Science.gov (United States)

    Pötschke, Martin; Gaitzsch, Uwe; Roth, Stefan; Rellinghaus, Bernd; Schultz, Ludwig

    2007-09-01

    Ni-Mn-Ga alloys are the best-known group of magnetically active alloys, which show magnetic field-induced strain (MFIS) via twin boundary motion. This phenomenon is often referred to as the magnetic shape memory effect. In single crystals, strains of up to 10% have been achieved that way. Up to now, no systematic study of this effect in polycrystals is available. In order to obtain this effect also in polycrystals, stationary casting is employed to achieve coarse-grained, textured samples. Therefore, a hot ceramic mold is mounted on a cold copper plate. Thus, a unidirectional heat flow along the sample axis is realized. The direction of heat flow coincides with the growth direction, which is preferentially [1 0 0]. After solidification, the samples were annealed at high temperature (1000 °C) to ensure chemical homogeneity on a local scale. The samples were cut by spark erosion. In order to allow for a direct investigation of the resulting microstructure by electron backscatter diffraction (EBSD) measurements, an alloy composition with a martensitic transformation below room temperature was chosen (Ni 48Mn 30Ga 22). The transformation temperature was checked by differential scanning calometry (DSC). The orientation of the grains and the preferred growth direction was analyzed using EBSD.

  15. Strčess-induced martensitic transformation in Cu-Al-Zn-Mn polycrystal investigated by two in -situ neutron diffraction techniques

    Czech Academy of Sciences Publication Activity Database

    Šittner, Petr; Lukáš, Petr; Neov, Dimitar; Daymond, M. R.; Novák, Václav; Swallowe, G. M.

    2002-01-01

    Roč. 324, - (2002), s. 225-234 ISSN 0921-5093 R&D Projects: GA MŠk ME 186; GA ČR GV202/97/K038; GA AV ČR IAA1010909 Institutional research plan: CEZ:AV0Z1010914 Keywords : Stress-induced martensitic transformation * Cu-Al-Zn-Mn polycrystal * neutron diffraction technique Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.107, year: 2002

  16. Lattice expansion of (Ga, Mn)As: The role of substitutional Mn and of the compensating defects

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Máca, František

    2005-01-01

    Roč. 108, č. 5 (2005), s. 789-704 ISSN 0587-4246 R&D Projects: GA AV ČR(CZ) IAA1010214; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100520 Keywords : density functional method * lattice constant * (Ga.Mn)As * annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.394, year: 2005

  17. Asymmetric reversal in aged high concentration CuMn alloy

    International Nuclear Information System (INIS)

    Barnsley, L C; MacA Gray, E; Webb, C J

    2013-01-01

    The magnetic hysteresis loops of an aged Cu 81.2 Mn 18.8 alloy sample exhibit significant asymmetric reversal at low temperatures, with high sensitivity to the cooling field. Much of the observed behaviour was explained by considering an ensemble of coherent, ferromagnetically aligned clusters interacting with a randomized spin glass component. A modified Stoner–Wohlfarth model was successfully applied to the data using Monte Carlo simulations, in order to gain insight into the dependence of the cluster shape anisotropy and exchange anisotropy on the cooling field. This model suggested that ferromagnetic clusters grow as the cooling field increases. (paper)

  18. Cu-Mn-Ce ternary mixed-oxide catalysts for catalytic combustion of toluene.

    Science.gov (United States)

    Lu, Hanfeng; Kong, Xianxian; Huang, Haifeng; Zhou, Ying; Chen, Yinfei

    2015-06-01

    Cu-Mn, Cu-Mn-Ce, and Cu-Ce mixed-oxide catalysts were prepared by a citric acid sol-gel method and then characterized by XRD, BET, H2-TPR and XPS analyses. Their catalytic properties were investigated in the toluene combustion reaction. Results showed that the Cu-Mn-Ce ternary mixed-oxide catalyst with 1:2:4 mole ratios had the highest catalytic activity, and 99% toluene conversion was achieved at temperatures below 220°C. In the Cu-Mn-Ce catalyst, a portion of Cu and Mn species entered into the CeO2 fluorite lattice, which led to the formation of a ceria-based solid solution. Excess Cu and Mn oxides existed on the surface of the ceria-based solid solution. The coexistence of Cu-Mn mixed oxides and the ceria-based solid solution resulted in a better synergetic interaction than the Cu-Mn and Cu-Ce catalysts, which promoted catalyst reducibility, increased oxygen mobility, and enhanced the formation of abundant active oxygen species. Copyright © 2015. Published by Elsevier B.V.

  19. Magnetic domains in Ni-Mn-Ga martensitic thin films

    International Nuclear Information System (INIS)

    Chernenko, V A; Anton, R Lopez; Kohl, M; Ohtsuka, M; Orue, I; Barandiaran, J M

    2005-01-01

    A series of martensitic Ni 52 Mn 24 Ga 24 thin films deposited on alumina ceramic substrates has been prepared by using RF(radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0m. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as δ∝√d in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples

  20. Magnetic properties of doped Mn-Ga alloys made by mechanical milling and heat treatment

    Directory of Open Access Journals (Sweden)

    Daniel R. Brown

    2016-05-01

    Full Text Available Mn-Ga alloys have shown hard magnetic properties, even though these alloys contain no rare-earth metals. However, much work is needed before rare-earth magnets can be replaced. We have examined the magnetic properties of bulk alloys made with partial replacement of both the Mn and Ga elements in the Mn0.8Ga0.2 system. Bulk samples of Mn-Ga-Bi, Mn-Ga-Al, Mn-Fe-Ga and Mn-(FeB-Ga alloys were fabricated and studied using mechanically milling and heat treatments while altering the atomic percentage of the third element between 2.5 and 20 at%. The ternary alloy exhibits all hard magnetic properties at room temperature with large coercivity. Annealed Mn-Ga-X bulk composites exhibit high coercivities up to 16.6 kOe and remanence up to 9.8 emu/g, that is increased by 115% over the binary system.

  1. Magnetic properties of doped Mn-Ga alloys made by mechanical milling and heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Daniel R. [Department of Material Science and Engineering, Florida State University, Tallahassee, FL 32304 (United States); National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Han, Ke; Niu, Rongmei [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Siegrist, Theo; Besara, Tiglet [Department of Material Science and Engineering, Florida State University, Tallahassee, FL 32304 (United States); Department of Chemical Engineering, Florida Agricultural and Mechanical University-Florida State University, Tallahassee, FL 32304 (United States)

    2016-05-15

    Mn-Ga alloys have shown hard magnetic properties, even though these alloys contain no rare-earth metals. However, much work is needed before rare-earth magnets can be replaced. We have examined the magnetic properties of bulk alloys made with partial replacement of both the Mn and Ga elements in the Mn{sub 0.8}Ga{sub 0.2} system. Bulk samples of Mn-Ga-Bi, Mn-Ga-Al, Mn-Fe-Ga and Mn-(FeB)-Ga alloys were fabricated and studied using mechanically milling and heat treatments while altering the atomic percentage of the third element between 2.5 and 20 at%. The ternary alloy exhibits all hard magnetic properties at room temperature with large coercivity. Annealed Mn-Ga-X bulk composites exhibit high coercivities up to 16.6 kOe and remanence up to 9.8 emu/g, that is increased by 115% over the binary system.

  2. Preparation of textured Ni-Mn-Ga alloys

    Energy Technology Data Exchange (ETDEWEB)

    Poetschke, Martin; Gaitzsch, Uwe; Huerrich, Claudia; Thoss, Franziska; Roth, Stefan; Rellinghaus, Bernd; Schultz, Ludwig [IFW Dresden, Helmholzstr. 20, 01069 Dresden (Germany)

    2009-07-01

    NiMnGa alloys have gained large research interest because of their possible application as magnetic shape memory materials. This effect is caused by the motion of twin boundaries in a magnetic field. Up to now most of the research was concentrated on single crystals. However, the preparation of single crystals is a time consuming and cost intensive process and compositional changes along the growth axis as well as segregations may occur. This is why for technical applications there is a great interest in polycrystals. To extend this effect to polycrystals, directional solidification was applied in order to prepare coarse grained, textured samples. Stationary casting in a pre-heated ceramic mold mounted on a copper plate was employed to generate a heat flow towards the bottom of the sample and thereby a directional solidification in the opposite direction. The martensitic transformation temperature which strongly depends on the composition was monitored by DSC, and it is shown that the chemical homogeneity along the sample axis is improved in likewise treated samples. The preferred solidification-induced growth direction was determined by EBSD. Investigations on the influence of MnS - precipitates in the samples, originating from the used rare Manganese, are discussed. The results are compared to samples, which were prepared by a Bridgeman method with draw rates in the range of several 100 mm/h to obtain a texture.

  3. What is the Valence of Mn in Ga(1-x)Mn(x)N?

    Science.gov (United States)

    Nelson, Ryky; Berlijn, Tom; Moreno, Juana; Jarrell, Mark; Ku, Wei

    2015-11-06

    We investigate the current debate on the Mn valence in Ga(1-x)Mn(x)N, a diluted magnetic semiconductor (DMS) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn valence to be close to 2+ (d(5)), but in a mixed spin configuration with average magnetic moments of 4μ(B). By integrating out high-energy degrees of freedom differently, we further derive for the first time from first-principles two low-energy pictures that reflect the intrinsic dual nature of the doped holes in the DMS: (1) an effective d(4) picture ideal for local physics, and (2) an effective d(5) picture suitable for extended properties. In the latter, our results further reveal a few novel physical effects, and pave the way for future realistic studies of magnetism. Our study not only resolves one of the outstanding key controversies of the field, but also exemplifies the general need for multiple effective descriptions to account for the rich low-energy physics in many-body systems in general.

  4. What is the valence of Mn in GaMnN?

    Science.gov (United States)

    Nelson, Ryky; Berlijn, Tom; Moreno, Juana; Jarrell, Mark; Ku, Wei

    2014-03-01

    Motivated by the potential high Curie temperature of GaMnN, we investigate the controversial Mn-valence in this diluted magnetic semiconductor. From a first-principles Wannier functions analysis of the high energy Hilbert space we find unambiguously the charge state of Mn to be close to 2 + (d5), but in a mixed spin configuration with average magnetic moments of 4 μB. Using more extended Wannier orbitals to capture the lower-energy physics, we further demonstrate the feasibility of both the effective d4 description (appropriate to deal with the local magnetic moment and Jahn-Teller distortion), and the effective d5 description (relevant to study long-range magnetic order). Our derivation highlights the general richness of low-energy sectors in interacting many-body systems and the generic need for multiple effective descriptions, and advocates for a diminished relevance of atomic valence measured by various experimental probes. This research is supported in part by LA-SiGMA, NSF Award Number #EPS-1003897. TB was supported by DOE CMCSN and as a Wigner Fellow at the Oak Ridge National Laboratory.

  5. Detection of stacking faults breaking the [110]/[110] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

    International Nuclear Information System (INIS)

    Kopecky, M.; Kub, J.; Maca, F.; Masek, J.; Pacherova, O.; Rushforth, A. W.; Gallagher, B. L.; Campion, R. P.; Novak, V.; Jungwirth, T.

    2011-01-01

    We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (111) planes and absent in the (111) and (111) planes. They occupy 10 -2 %-10 -1 % of the ferromagnetic epilayer volume while no stacking faults are detected in the controlled, undoped GaAs epilayer. Full-potential density functional calculations provide additional evidence that the formation of the stacking faults is promoted by Mn attracted to these structural defects. The enhanced Mn density along the common [110] direction of the stacking fault planes produces a symmetry-breaking mechanism of a strength and sense that can account for the uniaxial [110]/[110] magnetocrystalline anisotropy of these ferromagnetic semiconductors.

  6. Magnetocaloric behavior of Mn rich Ni46Cu2Mn43In11 alloy

    Science.gov (United States)

    Ray, Mayukh K.; Obaidat, I. M.; Banerjee, Sangam

    2018-02-01

    In this work, we studied the magnetic entropy change (ΔSM) across the martensite transformation (MT) in Mn-rich Ni46Cu2Mn43ln11 alloy. This compound undergoes a MT and a magnetic phase transition around the temperatures (TM=) 272 K and (TCA=) 325 K, respectively. A large field induced shift (=0.28 K/kOe) of the MT temperatures is observed. An application of magnetic field (H =) of 50 kOe causes a large ΔSM of 20 J/kg-K and -4.4 J/kg-K around TM and TCA, respectively. We also found that the change in magnetic field induced isothermal ΔSM(H)T is mainly depends on the induced austenite phase fraction by the applied magnetic field at that temperature. Possible reasons for the observed behaviours are comprehensively discussed.

  7. Thermal behaviour of Cu-Mg-Mn and Ni-Mg-Mn layered double hydroxides and characterization of formed oxides

    Czech Academy of Sciences Publication Activity Database

    Kovanda, F.; Grygar, Tomáš; Dorničák, V.; Rojka, T.; Bezdička, Petr; Jirátová, Květa

    2005-01-01

    Roč. 28, 1-4 (2005), s. 121-136 ISSN 0169-1317 Institutional research plan: CEZ:AV0Z40320502 Keywords : Cu-Mg-Mn basic carbonates * Ni-Mg-Mn hydrotalcite Subject RIV: CA - Inorganic Chemistry Impact factor: 1.324, year: 2005

  8. Free standing CuO-MnO2 nanocomposite for room temperature ammonia sensing

    Science.gov (United States)

    Bhuvaneshwari, S.; Papachan, Seethal; Gopalakrishnan, N.

    2017-05-01

    CuO nanostructures and CuO-MnO2 nanocomposite were successfully synthesized using hydrothermal method without any aid of growth controlling agents. The synthesized CuO nanostructures have monoclinic structure. The XRD pattern of CuO-MnO2 observed with mixed phases of monoclinic CuO and birnessite-type MnO2 which confirms the formation of nanocomposite. SEM images revealed the turmeric-like morphology for CuO and intercalated sheets with flowers on the surface for CuO-MnO2. The length and breadth of turmeric-like structure is about 642.2 nm and 141.8 nm, respectively. The band gap of 1.72 eV for CuO nanostructure and 1.9 eV for CuO-MnO2 nanocomposite were observed from the absorption spectra. The free standing devices of CuO-MnO2 showed nearly a 3 fold increase sensing response to ammonia at room temperature when compared to the constituent CuO. The composite sensor showed response time of 120 s and recovered within 600 s. This enhanced response can be asserted to the peculiar morphology of the composite that provides more adsorption site for gas diffusion to take place.

  9. Deposition of Mn-Cu-Ni-enriched sediments during glacial period in the Central Indian Basin

    Digital Repository Service at National Institute of Oceanography (India)

    Borole, D.V.

    Two siliceous sediment cores collected from the Central Indian Basin have been analysed for organic carbon, biogenic silica, Al, Mn, Ni and Cu content. The concentrations of Mn, Cu and Ni showed one order of magnitude variation (an enrichment by a...

  10. Voltammetric and X-ray diffraction analysis of the early stages of the thermal crystallization of mixed Cu,Mn oxides

    Czech Academy of Sciences Publication Activity Database

    Grygar, Tomáš; Rojka, T.; Bezdička, Petr; Večerníková, Eva; Kovanda, F.

    2004-01-01

    Roč. 8, č. 4 (2004), s. 252-259 ISSN 1432-8488 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : amorphous phases * Cu,Mn oxides * hydrotalcite Subject RIV: CA - Inorganic Chemistry Impact factor: 0.984, year: 2004

  11. Branched needle microstructure in Ni-Mn-Ga 10M martensite: EBSD study

    Czech Academy of Sciences Publication Activity Database

    Chulist, R.; Straka, Ladislav; Sozinov, A.; Tokarski, T.; Skrotzki, W.

    2017-01-01

    Roč. 128, Apr (2017), s. 113-119 ISSN 1359-6454 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : EBSD * NiMnGa * seudoelasticity * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 5.301, year: 2016

  12. Interfacial, electrical, and spin-injection properties of epitaxial Co2MnGa grown on GaAs(100)

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Hickey, M. C.; Holmes, S. N.

    2009-01-01

    The interfacial, electrical, and magnetic properties of the Heusler alloy Co2MnGa grown epitaxially on GaAs(100) are presented with an emphasis on the use of this metal-semiconductor combination for a device that operates on the principles of spin-injection between the two materials. Through...... systematic growth optimization the stoichiometry in the bulk Co2MnGa can be controlled to better than ±2%, although the interface is disordered and limits the spin-injection efficiency in a practical spintronic device irrespective of the half-metallic nature of the bulk metal. Molecular beam epitaxial growth...

  13. Tuning the bimetallic amide-imide precursor system to make paramagnetic GaMnN nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Drygas, Mariusz [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Janik, Jerzy F., E-mail: janikj@agh.edu.pl [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Musial, Michal [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Gosk, Jacek [Warsaw University of Technology, Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland); Twardowski, Andrzej, E-mail: andrzej.twardowski@fuw.edu.pl [University of Warsaw, Faculty of Physics, Pasteura 5, 02-093 Warszawa (Poland)

    2016-09-01

    A bimetallic molecular system made of gallium (III) tris(dimethyl)amide Ga(NMe{sub 2}){sub 3} and manganese (II) bis(trimethylsilyl)amide Mn[N(SiMe{sub 3}){sub 2}]{sub 2} (Me = CH{sub 3}, fixed initial Mn-content 10 at.%) was subjected to ammonolysis in refluxing/liquid ammonia. Upon isolation at room temperature, the amide-imide mixed metal precursor was pyrolyzed at elevated temperatures under an ammonia flow by two different routes. Route 1 consisted of a direct nitridation at high temperatures of 500, 700 or 900 °C. In route 2, a low temperature pyrolysis at 150 °C was applied prior to nitridation at the same final temperatures as in route 1. All nanopowders were characterized by XRD diffraction, FT-IR spectroscopy, and SEM/EDX microscopy and analysis. Thorough magnetization measurements in function of magnetic field and temperature were carried out with a SQUID magnetometer. In all samples, the paramagnetic phase of GaMnN was accompanied by an antiferromagnetic by-product linked to a Mn-containing species from decomposition and oxidation of Mn-precursor excess. The Mn-contents in the crystalline GaMnN, i.e., Mn-incorporated in GaN crystal lattice, were of the order of 2–3 at.% mostly independent on the nitridation route whereas the latter had a pronounced effect on amounts of the antiferromagnetic by-product. - Highlights: • New bimetallic precursor system for conversion to GaN/Mn nanopowders was designed. • Two conversion routes were applied with precursor nitridation at 500, 700 or 900 °C. • Prepared nanopowders were thoroughly characterized including magnetic measurements. • The major product was the gallium nitride Mn-doped phase GaMnN with 2–3 at.% of Mn.

  14. Transport and magnetic properties of Mn- and Mg-implanted GaAs layers

    International Nuclear Information System (INIS)

    Kulbachinskii, V.A.; Lunin, R.A.; Gurin, P.V.; Perov, N.S.; Sheverdyaeva, P.M.; Danilov, Yu.A.

    2006-01-01

    Mn-doped GaAs layers were fabricated by direct ion implantation into semi-insulating GaAs (100) substrates. The implanted samples were annealed at temperatures T a =700-800 o C. At these temperatures MnAs clusters are formed in GaAs due to decay of the supersaturated solid solution of Mn in GaAs. Additional Mg ion implantation was used to provide an enhancement of p-type doping in (Ga,Mn)As layers. Temperature dependence of resistance was measured between 4.2 and 300K, and the Hall effect was measured at temperatures of 4.2-200K. Anomalous Hall effect and ferromagnetic behavior have been found for all samples. An enhanced positive magnetoresistance was also observed at T>30K

  15. Magneto transport- and anisotropy studies on (001)- and (311)A-(Ga,Mn)As; Magnetotransport- und Anisotropieuntersuchungen an (001)- und (311)A-(Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Doeppe, M.

    2007-10-19

    In recent years the in low temperatures ferromagnetic semiconductor (Ga,Mn)As has gotten more and more into the focus of scientific interests. In the present work especially the magnetic anisotropies are concentrated upon. The first trials of epitactical growth of thin (Ga,Mn)As layers were successful on (001) GaAs substrate (typical thickness 20. 200 nm). In 2003 the Giant Planar Hall effect (GPHE) was discovered by resistance measurements in Hall geometry (transverse resistance) with an applied in plane magnetic field. The spin orbit coupling is accountable for both GPHE and the long known anisotropic magneto resistance (AMR). The gradient of the Hall voltage is important for the description of the resetting of magnetization because the resistance depends on the angle between the magnetization and the current path. This work presents results of anisotropy study on samples with a structure size in micro- and nanometer dimensions. The only a few hundred nanometer wide (Ga,Mn)As stripes were made by means of electron beam lithography and show strong additional uniaxiale magnetic anisotropy. The aspect ratio of the structure also influenced the resetting of magnetization. With the aid of compounding individual (Ga,Mn)As stripes (in a so-called zigzag structure) the evidence of a positive domain wall resistance in this material system could be shown. The second part of this work presents studies of (Ga,Mn)As layers grown on (311)A GaAs substrate. Here the B-field dependent Hall resistance measurements showed anomalous magnetic anisotropy in variance to (001)-(Ga,Mn)As. The orientation of the magnetic easy axes of (311)A (Ga,Mn)As depends - in contrast to (001)-(Ga,Mn)As - on the thickness of the magnetic layer and is tilted outside the (311)A surface. By an in plane applied magnetic field the AHE was also observable by the resetting of magnetization based on a non evanescent z-component perpendicular to the surface of this. An exact determination of the switching

  16. Thermodynamic stability of austenitic Ni-Mn-Cu cast iron

    Directory of Open Access Journals (Sweden)

    A. Janus

    2014-07-01

    Full Text Available The performed research was aimed at determining thermodynamic stability of structures of Ni-Mn-Cu cast iron castings. Examined were 35 alloys. The castings were tempered at 900 °C for 2 hours. Two cooling speeds were used: furnace-cooling and water-cooling. In the alloys with the nickel equivalent value less than 20,0 %, partial transition of austenite to martensite took place. The austenite decomposition ratio and the related growth of hardness was higher for smaller nickel equivalent value and was clearly larger in annealed castings than in hardened ones. Obtaining thermodynamically stable structure of castings requires larger than 20,0 % value of the nickel equivalent.

  17. Size effects on magnetic actuation in Ni-Mn-Ga shape-memory alloys.

    Science.gov (United States)

    Dunand, David C; Müllner, Peter

    2011-01-11

    The off-stoichiometric Ni(2)MnGa Heusler alloy is a magnetic shape-memory alloy capable of reversible magnetic-field-induced strains (MFIS). These are generated by twin boundaries moving under the influence of an internal stress produced by a magnetic field through the magnetocrystalline anisotropy. While MFIS are very large (up to 10%) for monocrystalline Ni-Mn-Ga, they are near zero (textiles, foams and composites). Various strategies are proposed to accentuate this geometric effect which enables large MFIS in polycrystalline Ni-Mn-Ga by matching grain and sample sizes.

  18. Optical investigation of spin injection from (Ga,Mn)As into n-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Bernhard; Sperl, Matthias; Utz, Martin; Schuh, Dieter; Einwanger, Andreas; Ciorga, Mariusz; Back, Christian; Bayreuther, Guenther [Universitaet Regensburg (Germany)

    2011-07-01

    Spin injection from a Ga(Mn,As) contact into a n-GaAs channel through an Esaki diode structure was investigated. Details of the layer structure are described in Ref 1. After lithographic patterning the spin polarization in the GaAs was measured by p-MOKE at low temperatures across a cleaved edge as described in Ref. 2. From the distribution of the spin polarization below the injecting contact the spin diffusion length and the drift dependent spin decay length can be estimated, which are important parameters for the calculation of the spin lifetime from Hanle-measurements. However, several contributions to the Hanle curves as the stray field, dynamic nuclear polarization and a tilted magnetization of the injector make the calculation of the spin lifetime more complex. In this contribution the different parameters of the sample are characterized by fitting experimental data with a one-dimensional drift-diffusion equation. A spin diffusion length of about 5 {mu}m and a spin lifetime of 10 ns was observed.

  19. Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

    OpenAIRE

    Devillers, Thibaut; Tian, Li; Adhikari, Rajdeep; Capuzzo, Giulia; Bonanni, Alberta

    2014-01-01

    The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al$_x$Ga$_{1-x}$N on GaN. Moreover, the doping with Mn promotes the formation of layered Al$_x$Ga$_{1-x}$N/GaN superlattice-like heterostructures opening wide perspective for controlling the segregation of ternar...

  20. Correlation between tetragonal zinc-blende structure and magnetocrystalline anisotropy of MnGa epilayers on GaAs(111)

    Energy Technology Data Exchange (ETDEWEB)

    Arins, A.W.; Jurca, H.F. [Laboratório de Superfícies e Interfaces, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, Paraná (Brazil); Zarpellon, J. [Laboratório de Superfícies e Interfaces, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, Paraná (Brazil); Universidade Estadual do Centro-Oeste-Campus Irati, PR 153km 7, CEP 84500-000, Irati, Paraná (Brazil); Fabrim, Z.E.; Fichtner, P.F.P. [Departamento de Metalurgia e Laboratório de Implantação Iônica-Universidade Federal do Rio Grande do Sul, Caixa Postal 15051, 91501-970 Porto Alegre, RS (Brazil); Varalda, J; Schreiner, W.H.; Mosca, D.H [Laboratório de Superfícies e Interfaces, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, Paraná (Brazil)

    2015-05-01

    MnGa films of few nanometer thickness with tetragonal zinc-blende (TZB) structure were grown by molecular beam epitaxy on GaAs(111) substrates. These ultrathin films have high magnetization at room temperature with magnetic moment as high as 3.2 μ{sub B} per formula unit. A strong magnetocrystalline anisotropy energy (MAE) comparable to that reported to δ-MnGa films with body-centered tetragonal (BCT) structure with similar c/a=1.1 is observed. Electronic structure calculations using density functional theory (DFT) reveal a robust ferrimagnetic ground state at room temperature and confirm that zinc-blende structure with tetragonal distortion has a metastable character. The strong MAE is associated with anisotropy of orbital magnetic moment which is described by the symmetry of the spin-polarized charge density along the crystallographic axes. - Highlights: • MnGa epilayers with tetragonal zinc-blende structure were grown. • Density functional theory calculations reveal a robust ferrimagnetic ground state at room temperature. • Substantial magnetocrystalline anisotropy is associated with the symmetry of the spin-polarized charge density of Mn 4d sites. • MnGa alloy films are promising for spintronics applications.

  1. Optical tunability of magnetic polaron stability in single-Mn doped bulk GaAs and GaAs/AlGaAs quantum dots

    Science.gov (United States)

    Qu, Fanyao; Moura, Fábio Vieira; Alves, Fabrizio M.; Gargano, Ricardo

    2013-03-01

    Optical control of magnetic property of a magnetic polaron (MP) in Mn-doped bulk GaAs and GaAs/AlGaAs quantum dots (QDs) have been studied. We have developed basis optimization technique for the method of linear combination of atomic orbitals (LCAOs), which significantly improve the accuracy of the conventional LCAO calculation. We have demonstrated that a monochromatic, linearly polarized, intense pulsed laser field induces a collapse of the MP and an ionization of Mn-acceptor in Mn-doped GaAs materials due to a dichotomy of hole wave function. We find this optical tunability of MP stability can be adjusted by confinement introduced in GaAs QDs.

  2. Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

    DEFF Research Database (Denmark)

    Kovács, András; Sadowski, J; Kasama, Takeshi

    2011-01-01

    Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga0.995Mn0.005As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements...... suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope...

  3. Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kasama, T., E-mail: tk@cen.dtu.dk; Yazdi, S. [Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Thuvander, M. [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Siusys, A. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa (Poland); Gontard, L. C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), C/Américo Vespucio 49, 41092 Seville (Spain); Kovács, A.; Duchamp, M.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich (Germany); Gustafsson, A. [Solid State Physics and the Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden); Sadowski, J. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa (Poland); MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden)

    2015-08-07

    Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 °C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography. Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga{sub 0.82}Mn{sub 0.18} nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 ± 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga{sub 0.82}Mn{sub 0.18} nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process.

  4. Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

    DEFF Research Database (Denmark)

    Kasama, Takeshi; Thuvander, M.; Siusys, A.

    2015-01-01

    Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non...

  5. Isothermal section of the Er-Cu-Ga ternary system at 973 K

    Energy Technology Data Exchange (ETDEWEB)

    Belgacem, B. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Pasturel, M., E-mail: mathieu.pasturel@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Tougait, O. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Nouri, S. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Bekkachi, H. El; Peron, I. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Hassen, R. Ben [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Noeel, H. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France)

    2012-08-05

    Highlights: Black-Right-Pointing-Pointer The isothermal section at 973 K of the Er-Cu-Ga ternary phase diagram has been established for the first time. Black-Right-Pointing-Pointer Eight extensions of binary compounds in the ternary domain have been identified, as well as six ternary intermediate solid solutions characterized by an important Cu/Ga mutual substitution. Black-Right-Pointing-Pointer Magnetic properties of Er{sub 3}(Cu,Ga){sub 11} are reported for the first time and confirms the paramagnetic Curie-Weiss behavior of all the six intermediate intermetallics. - Abstract: Phase relations in the Er-Cu-Ga ternary system have been established at 973 K by means of powder X-ray diffraction complemented by energy dispersive spectroscopy coupled to scanning electron microscopy. The isothermal section of the phase diagram comprises eight extensions of binaries into the ternary system, ErCu{sub 1-x}Ga{sub x} (x {<=} 0.5), ErCu{sub 2-x}Ga{sub x} (x {<=} 1.1), ErCu{sub 5-x}Ga{sub x} (x {<=} 0.5), Er{sub 5}Cu{sub x}Ga{sub 3-x} (x {<=} 0.60), Er{sub 3}Cu{sub x}Ga{sub 2-x} (x {<=} 0.24), ErCu{sub x}Ga{sub 1-x} (x {<=} 0.10), ErCu{sub x}Ga{sub 2-x} (x {<=} 0.30) and ErCu{sub x}Ga{sub 3-x} (x {<=} 0.35), as well as six ternary intermediate phases, ErCu{sub x}Ga{sub 2-x} (0.4 {<=} x {<=} 0.7), Er{sub 14}Cu{sub 51-x}Ga{sub x} (5.5 {<=} x {<=} 11.0), ErCu{sub 5-x}Ga{sub x} (0.8 {<=} x {<=} 2.3), Er{sub 2}Cu{sub 17-x}Ga{sub x} (4.9 {<=} x {<=} 8.0), ErCu{sub 12-x}Ga{sub x} (5.7 {<=} x {<=} 6.7) and Er{sub 3}Cu{sub x}Ga{sub 11-x} (1.5 {<=} x {<=} 4.4), all deriving from binary structure-types.

  6. Ductile shape memory alloys of the Cu-Al-Mn system

    International Nuclear Information System (INIS)

    Kainuma, R.; Takahashi, S.; Ishida, K.

    1995-01-01

    Cu-Al-Mn shape memory alloys with enhanced ductility have been developed by decreasing the degree of order in the β parent phase. Cu-Al-Mn alloys with Al contents lower than 18% exhibit good ductility with elongations of about 15% and excellent cold-workability arising from a lower degree of order in the Heusler (L21) β 1 parent phase, without any loss in their shape memory behavior. In this paper the mechanical and shape memory characteristics, such as the cold-workability, the Ms temperatures, the shape memory effect and the pseudo-elasticity of such ductile Cu-Al-Mn alloys are presented. (orig.)

  7. Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, H. [Unité de Recherche de Physique des Semi-conducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Technologiques, Université de Carthage, BP 51, la Marsa 2070 (Tunisia); Ouerghui, W., E-mail: ouerghuiwalid@yahoo.fr [Unité de Recherche de Physique des Semi-conducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Technologiques, Université de Carthage, BP 51, la Marsa 2070 (Tunisia); Thevenard, L.; Gourdon, C. [Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS-UMR 7588, 4 Place Jussieu, 75005 Paris (France); Maaref, M.A. [Unité de Recherche de Physique des Semi-conducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Technologiques, Université de Carthage, BP 51, la Marsa 2070 (Tunisia); Lemaître, A.; Mauguin, O. [Laboratoire de Photonique et Nanostructures, CNRS, Marcoussis (France); Testelin, C. [Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS-UMR 7588, 4 Place Jussieu, 75005 Paris (France)

    2013-09-15

    Vibrating Sample Magnetometer measurements were performed on a ferromagnetic (Ga,Mn)As thin film. We report Curie temperature (T{sub c}) up to 142 K in an annealed 200 nm GaMnAs layer. This result is remarkable and comparable with the T{sub c} obtained in GaMnAs for small thicknesses t<50 nm. Our result reveals the high quality of the sample albeit the presence of 3 different chemical species, and a large thickness. After comparison with previous work obtained in GaMnAs, we show that for film of up to t=200 nm the out diffusion based annealing process is not thickness limited. - Highlights: • 200 nm thick (Ga,Mn)As was investigated by X-ray diffraction and VSM techniques. • We report Curie temperature (Tc) up to 142 K in annealed 200 nm GaMnAs layers. • The post-growth annealing results in a dramatic enhancement of both M{sub s} and T{sub c}. • We show that the out diffusion mechanism is not limited to thickness up to 200 nm.

  8. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the link between magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials...

  9. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the linkage of magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials f...

  10. Additional micromineral Mn and Cu in ration to rumen biofermentation activities of sheep in vitro method

    Directory of Open Access Journals (Sweden)

    Farida Fathul

    2010-03-01

    Full Text Available Ruminants need micro mineral for both their own requirements and rumen microbe activities. The objective of this research was to study the effect of Mn, Cu, and its combination addition in ration on the activity of in vitro fermentation using sheep rumen liquid. This research was conducted at Laboratory of Ruminant Nutrition Faculty of Animal Science Bogor Agricultural Institute. The rations were R0 = basal ration; R1 = basal ration + 40 ppm Mn; R2 = basal ration + 10 ppm Cu; dan R3 = basal ration + 40 ppm Mn + 10 ppm Cu. The result indicated that addition of Mn, Cu, or Mn+Cu did not significantly influence (P>0.05 pH, NH3, bacteria and VFA; but they significantly increased (P<0.01 dry matter digestibility (DMD and organic matter digestibility (OMD. The average: pH was 4.78 ± 0.07 – 4.89 ± 0.06; NH3 was 6.77 ± 2.07 – 7.47±0,67 mM, and VFA was 93.19 ± 55.79 – 136.61±15.31 mM. R1 gave the highest value of DMD (57.63% and OMD (70.32%. The VFA related positively to NH3 (r = 0.86; with the equation Ý = -266.9 + 54.182 X and R2 = 0.74. It was concluded that additional of Mn, Cu, or Mn+Cu did not alter pH, NH3, and VFA. The additional of Mn altered DMD, but additional of Mn+Cu reduced DMD and OMD.

  11. Anisotropic magnetoresistance components in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Vašek, Petr; Novák, Vít; Olejník, Kamil; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2007-01-01

    Roč. 99, č. 14 (2007), 147207/1-147207/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠk LC510 Grant - others:UK(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  12. Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Makarovsky, O. N.; Khalid, M.N.; Yasin, S.; Edmonds, K. W.; Campion, R. P.; Wunderlich, J.; Jungwirth, Tomáš; Williams, D.A.; Gallagher, B. L.; Foxon, C. T.

    2008-01-01

    Roč. 10, č. 8 (2008), 085004/1-085004/9 ISSN 1367-2630 R&D Projects: GA ČR GEFON/06/E002; GA MŠk LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance , Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.440, year: 2008

  13. Domain walls in (Ga,Mn)As diluted magnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Sugawara, A.; Kasai, H.; Tonomura, A.; Brown, P.D.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Zemen, Jan; Jungwirth, Tomáš

    2008-01-01

    Roč. 100, č. 4 (2008), 047202/1-047202/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute ferromagnetic semiconductor * Néel domain walls * electron holography * Landau-Lifshitz-Gilbert simulation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  14. Magnetoelastic coupling in Ni-Mn-Ga magnetic shape memory alloy

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg

    2010-01-01

    Roč. 635, č. 12 (2010), s. 125-130 ISSN 0255-5476 R&D Projects: GA AV ČR(CZ) IAA200100627 Institutional research plan: CEZ:AV0Z10100520 Keywords : magnetically induced reorientation (MIR) * magnetic shape memory effect * ordinary magnetostriction * magnetoelastic coupling * Ni-Mn-Ga Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Mn doped GaN thin films and nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

    2012-01-01

    Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  16. Interlayer exchange coupling in (Ga,Mn)As based multilayers

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Jungwirth, Tomáš; Gallagher, B. L.

    2006-01-01

    Roč. 3, č. 12 (2006), s. 4070-4073 ISSN 1610-1634 R&D Projects: GA ČR GA202/05/0575; GA AV ČR(CZ) IAA100100530; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * standing-wave fluorescence * x-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Massive fermions with low mobility in antiferromagnet orthorhombic CuMnAs single crystals

    Science.gov (United States)

    Zhang, Xiao; Sun, Shanshan; Lei, Hechang

    2017-12-01

    We report the physical properties of orthorhombic o -CuMnAs single crystal, which is predicted to be a topological Dirac semimetal with magnetic ground state and inversion symmetry broken. o -CuMnAs exhibits an antiferromagnetic (AFM) transition with TN˜312 K . Further characterizations of magnetic properties suggest that the AFM order may be canted with the spin orientation in the b c plane. Small isotropic magnetoresistance and linearly field-dependent Hall resistivity with positive slope indicate that single hole-type carries with high density and low mobility dominate the transport properties of o -CuMnAs . Furthermore, the result of low-temperature heat capacity shows that the effective mass of carriers is much larger than those in typical topological semimetals. These results imply that the carriers in o -CuMnAs exhibit remarkably different features from those of Dirac fermions predicted in theory.

  18. Chitosan-based Schiff base-metal complexes (Mn, Cu, Co) as ...

    Indian Academy of Sciences (India)

    based Schiff base-metal complexes (Mn, Cu, Co) as heterogeneous, new catalysts for the -isophorone oxidation. C S Thatte ... A new chitosan-based Schiff base was prepared and complexed with manganese, cobalt and copper. These Schiff ...

  19. Ferromagnetism and transport in Mn and Mg co-implanted GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Kulbachinskii, V A [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Gurin, P V [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Danilov, Yu A [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Malysheva, E I [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Horikoshi, Y [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan); Onomitsu, K [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan)

    2007-03-15

    We investigated the influence of Mn and Mg co-implantation accompanied by rapid thermal annealing on magnetic and galvanomagnetic properties of p-GaAs. We characterized the samples with SQUID magnetometry and magnetotransport measurements in the temperature interval 4.2 KGa{sub 1-x}Mn{sub x}As solid solution on galvanomagnetic properties of holes. Above this temperature, ferromagnetism survives due to the MnAs and Ga{sub 1-x}Mn{sub x} clusters. The magnetoresistance changes from colossal negative to enhanced positive with increasing temperature near T = 35 K.

  20. Stacking faults in (Ga,Mn)As and uniaxial magnetocrystalline anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Maca, Frantisek; Masek, Jan; Kopecky, Milos; Kub, Jiri; Jungwirth, Tomas [Institute of Physics ASCR, Praha (Czech Republic)

    2011-07-01

    The high resolution X-ray difraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers showed a structural anisotropy in the form of stacking faults which are present in the (1-11) and (111) planes and absent in the (-111) and (1-11) planes. Our full-potential density functional calculations explain the energetic preference of substitutional Mn to decorate the stacking faults. This preference energy is comparable with the formation energy of the faults in a pure GaAs. We surmise that the enhanced Mn density along the common [1-10] direction of the stacking fault planes represents the micro-structural origin of the in-plane uniaxial magnetocrystalline anisotropy of these semiconductors.

  1. Charge and orbital orders and structural instability in high-pressure quadruple perovskite CeCuMn6O12.

    Science.gov (United States)

    Zhang, Lei; Matsushita, Yoshitaka; Katsuya, Yoshio; Tanaka, Masahiko; Yamaura, Kazunari; Belik, Alexei A

    2018-01-08

    We prepared a quadruple perovskite CeCuMn6O12 under high-pressure and high-temperature conditions at 6 GPa and about 1670 K and investigated its structural, magnetic and transport properties. CeCuMn6O12 crystallizes in space group Im-3 above TCO = 297 K; below this temperature, it adopts space group R-3 with the 1:3 (Mn4+:Mn3+) charge and orbital orders. Unusual compressed Mn3+O6 octahedra are realized in CeCuMn6O12 similar to CaMn7O12 with the -Q3 Jahn-Teller distortion mode. Below about 90 K, structural instability takes place with phase separation and the appearance of competing phases; and below 70 K, two R-3 phases coexist. CeCuMn6O12 exhibits a ferromagnetic-like transition below TC = 140 K, and it is a semiconductor with the magnetoresistance reaching about -40 % at 140 K and 70 kOe. We argued that the valence of Ce is +3 in CeCuMn6O12 with the Ce3+(Cu2+Mn3+2)(Mn3+3Mn4+)O12 charge distribution in the charge-ordered R-3 phase and Ce3+(Cu2+Mn3+2)(Mn3.25+4)O12 in the charge-disordered Im-3 phase. © 2018 IOP Publishing Ltd.

  2. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  3. In situ TEM study of deformation twinning in Ni-Mn-Ga non-modulated martensite

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Ge, Y.; Heczko, Oleg; Hannula, S.-P.

    2013-01-01

    Roč. 61, č. 14 (2013), s. 5290-5299 ISSN 1359-6454 R&D Projects: GA ČR(CZ) GAP107/11/0391; GA MŠk(CZ) LM2011026; GA ČR GAP107/12/0800; GA AV ČR IAA100100920 Institutional support: RVO:68378271 Keywords : Ni-Mn-Ga * in situ TEM * magnetic shape memory * deformation twinning * twinning dislocation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.940, year: 2013

  4. Temperature dependency of the Ga/In distribution in Cu(In,Ga)Se2 absorbers in high temperature processes

    Science.gov (United States)

    Mueller, B. J.; Demes, T.; Lill, P. C.; Haug, V.; Hergert, F.; Zweigart, S.; Herr, U.

    2016-05-01

    The current article reports about the influence of temperature and glass substrate on Ga/In interdiffusion and chalcopyrite phase formation in the stacked elemental layer process. According to the Shockley-Queisser limit the optimum for single junction devices is near 1.4 eV, which is strongly coupled on the Ga/(Ga+In) ratio of Cu(In,Ga)Se2 thin film solar cells. To increase the Ga content in the active region of the Cu(In,Ga)Se2 a 70:30 CuGa alloy target is used. An increase of the selenization temperature leads to a more homogeneous Ga/In distribution and a less pronounced Ga agglomeration at the back contact. The Ga/In interdiffusion rates for different selenization temperatures and substrates were estimated with the model of a two layer system. At the highest selenization temperature used an absorber band gap of 1.12 eV was realized, which is similar to typical values of absorbers produced during the co-evaporation process. The Na diffusion into the Cu(In,Ga)Se2 is weakly temperature dependent but strongly influenced by the choice of the glass substrate composition.

  5. Experimental determination of the Curie temperature for Ga(Mn)As

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Výborný, Zdeněk; Jurka, Vlastimil; Smrčka, Ludvík

    2011-01-01

    Roč. 24, 1-2 (2011), s. 805-808 ISSN 1557-1939 R&D Projects: GA MŠk MEB020928; GA AV ČR KAN400100652 Institutional research plan: CEZ:AV0Z10100521 Keywords : Ga(Mn)As * Hall effect * magnetoresistance * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.650, year: 2011

  6. Exchange and spin-orbit induced phenomena in diluted (Ga, Mn) As from first principles

    Czech Academy of Sciences Publication Activity Database

    Kudrnovský, Josef; Drchal, Václav; Turek, Ilja

    2016-01-01

    Roč. 94, č. 5 (2016), 1-8, č. článku 054428. ISSN 2469-9950 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68378271 ; RVO:68081723 Keywords : GaMnAs * Curie temperature * spin-stiffness * anisotropic magnetoresistance * anomalous Hall effect * Gilbert damping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  7. Synthesis and magnetic properties of hexagonal Y(Mn,Cu)O{sub 3} multiferroic materials

    Energy Technology Data Exchange (ETDEWEB)

    Jeuvrey, L., E-mail: laurent.jeuvrey@univ-rennes1.fr [Sciences Chimiques de Rennes, UMR-CNRS 6226, Universite de Rennes 1, 35042 Rennes cedex (France); Pena, O. [Sciences Chimiques de Rennes, UMR-CNRS 6226, Universite de Rennes 1, 35042 Rennes cedex (France); Moure, A.; Moure, C. [Electroceramics Department, Instituto de Ceramica y Vidrio, CSIC, C/Kelsen 5, 28049, Madrid (Spain)

    2012-03-15

    Single-phase hexagonal-type solid solutions based on the multiferroic YMnO{sub 3} material were synthesized by a modified Pechini process. Copper doping at the B-site (YMn{sub 1-x}Cu{sub x}O{sub 3}; x<0.15) and self-doping at the A-site (Y{sub 1+y}MnO{sub 3}; y<0.10) successfully maintained the hexagonal structure. Self-doping was limited to y(Y)=2 at% and confirmed that excess yttrium avoids formation of ferromagnetic manganese oxide impurities but creates vacancies at the Mn site. Chemical substitution at the B-site inhibits the geometrical frustration of the Mn{sup 3+} two-dimensional lattice. The magnetic transition at T{sub N} decreases from 70 K down to 49 K, when x(Cu) goes from 0 to 15 at%. Weak ferromagnetic Mn{sup 3+}-Mn{sup 4+} interactions created by the substitution of Mn{sup 3+} by Cu{sup 2+}, are visible through the coercive field and spontaneous magnetization but do not modify the overall magnetic frustration. Presence of Mn{sup 3+}-Mn{sup 4+} pairs leads to an increase of the electrical conductivity due to thermally-activated small-polaron hopping mechanisms. Results show that local ferromagnetic interactions can coexist within the frustrated state in the hexagonal polar structure. - Highlights: Black-Right-Pointing-Pointer Hexagonal-type solid solutions of Y(Mn,Cu)O{sub 3} synthesized by Pechini process. Black-Right-Pointing-Pointer Chemical substitution at B site inhibits geometrical magnetic frustration. Black-Right-Pointing-Pointer Magnetic transition decreases with Cu-doping. Black-Right-Pointing-Pointer Local ferromagnetic Mn-Mn interactions coexist with the frustrated state.

  8. Microwave assisted polyol synthesis of CuGaSe2 nanoparticles for solar cell application

    Science.gov (United States)

    Grevtsev, A. S.; Levin, O. V.; Tverjanovich, A. S.

    Chalcopyrite CuGaSe2 nanocrystals with average size about 90 nm were synthesized by quick and cheap microwave assisted polyol method without special dissolving of Se in organic solvents. Composition, structure and optical properties of the obtained particles correspond to pure bulk CuGaSe2. CuGaSe2/PCBM composite films produced from the synthesized nanoparticles possess reproducible photovoltaic response.

  9. Spin disorder effect in anomalous Hall effect in MnGa

    Science.gov (United States)

    Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

    2017-12-01

    We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

  10. Dislocation structure evolution and characterization in the compression deformed Mn-Cu alloy

    International Nuclear Information System (INIS)

    Zhong, Y.; Yin, F.; Sakaguchi, T.; Nagai, K.; Yang, K.

    2007-01-01

    Dislocation densities and dislocation structure arrangements in cold compressed polycrystalline commercial M2052 (Mn-20Cu-5Ni-2Fe) high damping alloy with various strains were determined in scanning mode by X-ray peak profile analysis and electron backscatter diffraction (EBSD). The results indicate that the Mn-Cu-Ni-Fe alloy has an evolution behavior quite similar to the dislocation structure in copper. The dislocation arrangement parameter shows a local minimum in the transition range between stages III and IV that can be related to the transformation of the dislocation arrangement in the cell walls from a polarized dipole wall (PDW) into a polarized tile wall (PTW) structure. This evolution is further confirmed by the results of local misorientation determined by EBSD. In addition, during deformation, the multiplication of dislocation densities in the MnCu alloy is significantly slower than that in copper, and the transition of the dislocation structure is strongly retarded in the MnCu alloy compared with copper. These results can be explained by the mechanism of elastic anisotropy on the dislocation dynamics, as the elastic anisotropy in the MnCu alloy is larger than that in copper, which can strongly retard the multiplication of the dislocation population and the transformation of the dislocation structure. These results are important for research into the plastic working behavior of Mn-Cu-Ni-Fe high damping alloy

  11. Ferromagnetic interactions in Mn-doped magnetic semiconductors Ga(As,P) and (Al,Ga)As

    Energy Technology Data Exchange (ETDEWEB)

    Maca, Frantisek; Kudrnovsky, Josef [Institute of Physics ASCR, Praha, Czech Republic (Czech Republic)

    2007-07-01

    The optimization of the host composition is one way for systematical theoretical search for new spintronic materials. In this contribution we study in detail the hole mediated ferromagnetism in Mn-doped Ga(As,P) and (Al,Ga)As. Mn incorporation in ternary hosts is investigated using ab initio electronic structure calculations based on the density functional theory. For a set of ordered ternary alloys we discuss the influence of lattice parameters as well as valence band off-set on the close neighbor exchange interactions. Our results predict an increase of Curie temperature for systems with larger amount of P, i.e. for materials with smaller lattice constant and with valence band edge closer to Mn d-states. For ternary alloys with a higher content of P also a reduced number of compensating impurities was predicted.

  12. Magnetotransport of CaCu3Mn4O12 complex perovskite derivatives

    International Nuclear Information System (INIS)

    Sanchez-Benitez, J.; Andres, A. de; Garcia-Hernandez, M.; Alonso, J.A.; Martinez-Lope, M.J.

    2006-01-01

    Neutron powder diffraction, magnetic and magnetotransport studies were carried out on new derivatives of the CaCu 3 Mn 4 O 12 (A'A 3 B 4 O 12 ) complex perovskite. The samples were prepared in polycrystalline form under moderate pressure conditions. Substitutions at A and A' sites of CaCu 3 Mn 4 O 12 , with only Mn 4+ and insulating behavior, imply electron doping that affects the magnetic and transport properties. X-ray Absorption Spectroscopy showed that Mn 3+ /Mn 4+ valence mixing occurs only at B site, progressively filling the e g band and providing the metallic character in these compounds, as we observe in most of these samples. A semiconducting behavior is observed in samples with 50% Mn 3+ at B site. This can be understood by the opening of a gap in the conduction band corresponding to the half filling of the e g states. This is the case of the tetravalent rare earth doped samples (Ce and Th at A' site) and of the appropriate A site doped Ca(CuMn 2 )Mn 4 O 12 sample. At the strongly distorted A positions, Mn 3+ , with localized e g electrons, act as magnetic impurities at very low temperatures (<40 K) giving rise to the observed upturn in the resistivity. The magnetic origin of this scattering is evidenced by its drastic reduction under a magnetic field

  13. n-type doping and passivation of CuInSe2 and CuGaSe2 by hydrogen

    Science.gov (United States)

    Kılıç, Çetin; Zunger, Alex

    2003-08-01

    An impurity in a semiconductor can have either amphoteric behavior (no net production of electron or holes), or be an energetically deep center (carriers produced only at high temperature), or a shallow center (carriers produced even at low temperature). In most semiconductors (e.g., Si, GaAs, GaP, InP, and ZnSe) hydrogen impurities do not produce free carriers, being instead an amphoretic center; yet hydrogen does dope n-type some oxides such as SnO2 and ZnO. We studied theoretically whether or not H could dope chalcopyrite I-III-VI2 compounds, CuInSe2 and CuGaSe2. Based on the first-principles calculations, we find that nonsubstitutionally incorporated hydrogen forms a deep donor in CuGaSe2, but a relatively shallow donor in CuInSe2. The interaction of hydrogen with the abundant defect complex (2VCu+InCu)0 yields an even shallower donor, making CuInSe2 n type. In addition, our results show that hydrogen passivates the acceptorlike copper vacancies in both CuInSe2 and CuGaSe2, thus eliminating p type behavior. These findings, in conjunction with typical conditions under which CuInSe2 and CuGaSe2 are grown, indicate that CuInSe2 could be doped n type via hydrogen incorporation, whereas CuGaSe2 could not. The reason for the different behavior of CuInSe2 and CuGaSe2 towards hydrogen is that in the latter case the conduction-band minimum is at a considerably higher energy than in the former case. Despite this difference in electrical properties, it is predicted that hydrogen can be stored in both CuInSe2 and CuGaSe2 via implantation since the implanted hydrogens decorate copper atoms as well as preexisting copper vacancies.

  14. Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers

    Science.gov (United States)

    Chang, H. W.; Akita, S.; Matsukura, F.; Ohno, H.

    2014-09-01

    We report molecular beam epitaxy of a ferromagnetic semiconductor (Ga,Mn)Sb, which is a single crystal without detectable second phases. We report also the details of magnetotransport properties of (Ga,Mn)Sb and the effects of electric fields on them. The difference between the properties observed here and properties of those reported earlier for a ferromagnetic semiconductor (Ga,Mn)As, provides information critical for further understanding of fundamental and device physics of ferromagnetic semiconductors.

  15. Formation and structure of nanocrystalline Al-Mn-Ni-Cu alloys

    International Nuclear Information System (INIS)

    Latuch, J.; Krasnowski, M.; Ciesielska, B.

    2002-01-01

    This paper reports the results of the short investigation on the effect of Cu additions upon the nanocrystallization behaviour of an Al-Mn-Ni alloy. 2 at.% Cu added to the base alloy of Al 85 Mn 10 Ni 5 alloy by substitution for Mn(mischmetal). The control of cooling rate did not cause the formation of nanocrystals of fcc-Al phase. The nanocrystalline structure fcc-Al + amorphous phase in quarternary alloy was obtained by isothermal annealing and continuous heating method, but the last technique is more effective. The volume fraction, lattice parameter, and size of Al-phase were calculated. (author)

  16. TMR- and TAMR-effects of (Ga,Mn)As and GaAs tunnel junctions; TMR- und TAMR-Effekt an (Ga,Mn)As und GaAs Tunnelstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Brinkmeier, Eva

    2009-07-30

    This thesis is concerned with the experimental investigation of the tunnel magnetoresistance (TMR) and tunnel anistropic magnetoresistance (TAMR) in GaAs and (Ga,Mn)As tunnel junction. A special emphasis was put on the study of the newly discovered TAMR effect, which consists in the variation of the TMR with the magnetization's angle. The tunnel junctions were fabricated by means of optical lithography and wet chemical etching. The dependence of the TAMR effect on the layer system, the barrier thickness, the bias voltage, the temperature and the applied magnetic field magnitude was subsequently examined. The conducted measurements on (Ga,Mn)As junctions showed a TMR effect as well as various anisotropic effects which are in good agreement with the experimental reports published so far. The observed dependences of the TAMR effect on the aforementioned parameters were discussed within the framework of two distinct preexisting theoretical models and the experimental data could be explained by the superimposition of two effects stemming in one case from the spin orbit coupling in the (Ga,Mn)As layer and in the other from the concurrent action of the Rashba and Dresselhaus spin orbit interaction within the barrier. (orig.)

  17. Phenomenological approach to the spin glass state of (Cu-Mn, Ag-Mn, Au-Mn and Au-Fe) alloys at low temperatures

    International Nuclear Information System (INIS)

    Al-Jalali, Muhammad A.; Kayali, Fawaz A.

    2000-01-01

    Full text.The spin glass of: (Cu-Mn, Ag-Mn, Au-Mn, Au-Fe) alloys has been extensively studied. The availability of published and assured experimental data on the susceptibility x(T) of this alloys has enabled the design and application of phenomenological approach to the spin glass state of these interesting alloys. The use of and advanced (S.P.S.S) computer software has resulted revealing some important features of the spin glass in these alloys, the most important of which is that the spin glass state do not represent as phase change

  18. 27Al, 63Cu NMR spectroscopy and electrical transport in Heusler Cu-Mn-Al alloy powders

    Science.gov (United States)

    Nadutov, V. M.; Perekos, A. O.; Kokorin, V. V.; Trachevskii, V. V.; Konoplyuk, S. M.; Vashchuk, D. L.

    2018-02-01

    The ultrafine powder of the Heusler Cu-13,1Mn-12,6Al (wt.%) alloy produced by electrical spark dispersion (ESD) in ethanol and the pellets prepared by pressing of the powders and aged in various gas environment (air, Ar, vacuum) were studied by XRD, nuclear magnetic resonance, magnetic and electric transport methods. The constituent phases were identified as b.c.c. α-Cu-Mn-Al, f.c.c. γ-Cu-Mn-Al, Cu2MnAl, and oxides. The sizes of the coherently scattering domains (CSD) and the saturation magnetizations were in the range of 4-90 nm and 0-1.5 Am2/kg, respectively. 27Al and 63Cu NMR spectra of the powders and pellets have shown hyperfine structure caused by contributions from atomic nuclei of the constituent phases. The aging of pellets in different gas environments had effect on their phase composition but no effect on dispersion of the phases. In contrast to the as-cast alloy, electrical resistance of the pellets evidenced semiconducting behavior at elevated temperatures due to the presence of metal oxides formed on the surfaces of nanoparticles.

  19. Novel synthesis and shape-dependent catalytic performance of Cu-Mn oxides for CO oxidation

    Science.gov (United States)

    Li, Zhixun; Wang, Honglei; Wu, Xingxing; Ye, Qinglan; Xu, Xuetang; Li, Bin; Wang, Fan

    2017-05-01

    Transition metal oxides with large specific surface area are attractive for high-activity catalysts, and hierarchical structures of transition metal oxides with porous feature possess the structural advantage in the transfer of gaseous reactant and product. In this work, porous Cu-Mn oxides with high surface area were successfully obtained through low-temperature coprecipitation method in alcohol/water solvent and then post-annealing. The addition of alcohol showed great influences on the shape and catalytic performances for CO oxidation. Dumbbell-like Cu-Mn oxide particles with splitting ends displayed high catalytic activity and a complete conversion of CO was achieved at 45 °C, suggesting a shape-dependent catalytic activity. The oxidative activity was attributed to a combination of factors including specific surface area, active surface oxygen species and Mn(IV) cations. The results may supply a new thought to design high-performance Cu-Mn oxide catalysts.

  20. XANES Studies of Mn K and L3,2 Edges in the (Ga,Mn)As Layers Modified by High Temperature Annealing

    International Nuclear Information System (INIS)

    Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Jakiela, R.; Demchenko, I.N.; Sadowski, J.; Holub-Krappe, E.; Persson, A.; Arvanitis, D.

    2008-01-01

    Ga 1-x Mn x As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Ga 1-x Mn x As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not ob- serve changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms. (authors)

  1. Effects of plasma pretreatment on the process of self-forming Cu-Mn alloy barriers for Cu interconnects

    Science.gov (United States)

    Park, Jae-Hyung; Han, Dong-Suk; Kim, Kyoung-Deok; Park, Jong-Wan

    2018-02-01

    This study investigated the effect of plasma pretreatment on the process of a self-forming Cu-Mn alloy barrier on porous low-k dielectrics. To study the effects of plasma on the performance of a self-formed Mn-based barrier, low-k dielectrics were pretreated with H2 plasma or NH3 plasma. Cu-Mn alloy materials on low-k substrates that were subject to pretreatment with H2 plasma exhibited lower electrical resistivity values and the formation of thicker Mn-based interlayers than those on low-k substrates that were subject to pretreatment with NH3 plasma. Transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analyses demonstrated the exceptional performance of the Mn-based interlayer on plasma-pretreated low-k substrates with regard to thickness, chemical composition, and reliability. Plasma treating with H2 gas formed hydrophilic Si-OH bonds on the surface of the low-k layer, resulting in Mn-based interlayers with greater thickness after annealing. However, additional moisture uptake was induced on the surface of the low-k dielectric, degrading electrical reliability. By contrast, plasma treating with NH3 gas was less effective with regard to forming a Mn-based interlayer, but produced a Si-N/C-N layer on the low-k surface, yielding improved barrier characteristics.

  2. L-J phase in a Cu2.2Mn0.8Al alloy

    Science.gov (United States)

    Jeng, S. C.; Liu, T. F.

    1995-06-01

    A new type of precipitate (designated L-J phase) with two variants was observed within the (DO3 + L21) matrix in a Cu2.2Mn0.8Al alloy. Transmission electron microscopy examinations indicated that the L-J phase has an orthorhombic structure with lattice parameters a = 0.413 nm, b = 0.254 nm and c = 0.728 nm. The orientation relationship between the L-J phase and the matrix is (100)L-J//(011) m , (010)L-J//(111) m and (001)L-J//(211) m . The rotation axis and rotation angle between two variants of the L-J phase are [021] and 90 deg. The L-J phase has never been observed in various Cu-Al, Cu-Mn, and Cu-Al-Mn alloy systems before.

  3. Structural phase transitions of Ga(Mn)N under high pressure

    Science.gov (United States)

    Sukserm, Akkarach; Pinsook, Udomsilp; Pluengphon, Prayoonsak

    2017-09-01

    Gallium nitride doped with a small concentration of manganese (Ga1-x Mn x N) is one of diluted magnetic semiconductors which can be used for spintronic applications. In this work, Ga31Mn1N32 in the zinc blende (ZB) and rock salt (RS) structures were investigated. We employed the density functional theory (DFT) within the generalized gradient approximation (GGA) to study structural properties, the density of states and the magnetization. The structural phase transitions under pressure up to 60 GPa were also studied. We found that Ga31Mn1N32 in the ZB phase is stable at ambient pressure, and change to the RS phase at about 42 GPa. By using GGA+U, the absolute magnetization is 4.68 μB per cell at 0 GPa. We found also that the absolute magnetization is reduced under pressure.

  4. Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

    Science.gov (United States)

    Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

    2018-05-01

    D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

  5. Electric-field-induced magnetization reorientation in a (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with out-of-plane anisotropy

    Science.gov (United States)

    Cormier, M.; Jeudy, V.; Niazi, T.; Lucot, D.; Granada, M.; Cibert, J.; Lemaître, A.

    2014-11-01

    Combined electric- and magnetic-field control of magnetization orientation and reversal is studied using anomalous Hall effect in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer. Its anisotropy results from the electrically tunable competition between the in-plane and out-of-plane anisotropies of both layers. The magnetic hysteresis loop shape is sensitive to the bias electric field. In the loop reversible part, an electric-field variation is found to reorient reversibly the magnetization. In this case, the magnetization direction follows the easy anisotropy direction controlled by electric field. In contrast, in the hysteretic part, an almost complete nonreversible magnetization reversal is achieved. This is interpreted as resulting from the electric-field-induced enhancement of domain nucleation and domain-wall propagation.

  6. Extrinsic doping of CuGaSe2 single crystals

    Science.gov (United States)

    Schön, J. H.

    2000-02-01

    Technological applications of semiconductors depend critically on the ability to dope them. Single crystals of CuGaSe2 were doped during crystal growth either by a post-growth diffusion step or by ion-implantation, in order to study the limits of extrinsic doping. The electrical and optical properties of the doped samples are analysed by Hall effect and photoluminescence (PL) measurements. The carrier concentration at room temperature can be adjusted between 2 × 1019 cm-3 (p-type) and 1017 cm-3 (n-type). Various donor and acceptor levels are identified and ascribed to dopant-induced point defects taking into account the dopant concentration and/or the post-growth treatment of the single crystals.

  7. Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A Harsono Soepardjo

    2010-10-01

    Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

  8. In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

    Energy Technology Data Exchange (ETDEWEB)

    Shiogai, J. [Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan); Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan); Ciorga, M., E-mail: mariusz.ciorga@ur.de; Utz, M.; Schuh, D.; Bougeard, D.; Weiss, D. [Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany); Kohda, M.; Nitta, J. [Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan); Nojima, T. [Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan)

    2015-06-29

    We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

  9. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  10. Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

    CERN Document Server

    Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

    2012-01-01

    We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

  11. Modification of Ni-Mn-Ga ferromagnetic shape memory alloy by addition of rare earth elements

    International Nuclear Information System (INIS)

    Tsuchiya, Koichi; Tsutsumi, Akinori; Ohtsuka, Hideyuki; Umemoto, Minoru

    2003-01-01

    Effect of addition of rare earth elements, such as, Nd, Sm and Tb, was investigated on various properties of Ni-Mn-Ga ferromagnetic shape memory alloys (SMAs). The solubility of the rare earth in the L2 1 phase was found to be very low, most likely less than 0.1 mol%. Insolvable rare earth segregated into subgrain boundaries or grain boundaries to form precipitates. Phase transformation behavior and the structure of martensite phase exhibit a similar dependence on valence electron concentration to those in ternary Ni-Mn-Ga alloys. It was revealed that the addition of rare earth significantly improves the compressive ductility of the alloy

  12. Structural transformations in Mn2NiGa due to residual stress

    International Nuclear Information System (INIS)

    Singh, Sanjay; Maniraj, M.; D'Souza, S. W.; Barman, S. R.; Ranjan, R.

    2010-01-01

    Powder x-ray diffraction study of Mn 2 NiGa ferromagnetic shape memory alloy shows the existence of a 7M monoclinic modulated structure at room temperature (RT). The structure of Mn 2 NiGa is found to be highly dependent on residual stress. For higher stress, the structure is tetragonal at RT, and for intermediate stress it is 7M monoclinic. However, only when the stress is considerably relaxed, the structure is cubic, as is expected at RT since the martensitic transition temperature is 230 K.

  13. Ferromagnetic (Ga,Mn)As layers and nanostructures: control of magnetic anisotropy by strain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Wenisch, Jan

    2008-07-01

    This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution X-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter. (orig.)

  14. Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As

    Science.gov (United States)

    Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2015-07-01

    The modulation of the Gilbert damping constant α in (Ga,Mn)As by the application of an electric field is detected by ferromagnetic resonance measurements, where α increases with decreasing hole concentration. The smaller modulation of other magnetic parameters, such as magnetic anisotropy fields and Landé g factor, suggests that the modulation of α is governed by other effects rather than the spin-orbit coupling. Comparison of the conductivity dependence of α with that of the magnetization indicates that the magnetic disorder induced by carrier localization plays a major role in determining the magnitude of α in (Ga,Mn)As.

  15. L1{sub 0} stacked binaries as candidates for hard-magnets. FePt, MnAl and MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Yu-ichiro [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Applied Physics, The University of Tokyo (Japan); Madjarova, Galia [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physical Chemistry, Faculty of Chemistry and Pharmacy, Sofia University (Bulgaria); Flores-Livas, Jose A. [Department of Physics, Universitaet Basel (Switzerland); Dewhurst, J.K.; Gross, E.K.U. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Felser, C. [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Sharma, S. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physics, Indian Institute of Technology, Roorkee, Uttarkhand (India)

    2017-08-15

    We present a novel approach for designing new hard magnets by forming stacks of existing binary magnets to enhance the magneto crystalline anisotropy. This is followed by an attempt at reducing the amount of expensive metal in these stacks by replacing it with cheaper metal with similar ionic radius. This strategy is explored using examples of FePt, MnAl and MnGa. In this study a few promising materials are suggested as good candidates for hard magnets: stacked binary FePt{sub 2}MnGa{sub 2} in structure where each magnetic layer is separated by two non-magnetic layers, FePtMnGa and FePtMnAl in hexagonally distorted Heusler structures and FePt{sub 0.5}Ti{sub 0.5}MnAl. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat

    2012-07-16

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  17. Spin disordered resistivity of the Heusler Ni.sub.2./sub.MnGa-based alloys

    Czech Academy of Sciences Publication Activity Database

    Kamarád, Jiří; Kaštil, Jiří; Albertini, F.; Fabbrici, S.; Arnold, Zdeněk

    2017-01-01

    Roč. 131, č. 4 (2017), s. 1072-1074 ISSN 0587-4246 R&D Projects: GA ČR GAP204/12/0692 Institutional support: RVO:68378271 Keywords : spin disordered resistivity * magnetoresistance * Heusler alloys * Ni 2 MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.469, year: 2016

  18. Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

    Energy Technology Data Exchange (ETDEWEB)

    Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan; McGoffin, J. Tyler; Anderson, Timothy J.

    2016-11-21

    Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/III ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.

  19. Theory of weak localization in ferromagnetic (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Garate, I.; Sinova, J.; Jungwirth, Tomáš; MacDonald, A.

    2009-01-01

    Roč. 79, č. 15 (2009), 155702/1-155702/13 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : electrical conductivity * exchange interactions (electron) * ferromagnetic materials * gallium arsenide * magnetic semiconductors * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.155207

  20. Phase transformation and microstructure study of the as-cast Cu-rich Cu-Al-Mn ternary alloys

    Directory of Open Access Journals (Sweden)

    Holjevac-Grgurić T.

    2017-01-01

    Full Text Available Four Cu-rich alloys from the ternary Cu-Al-Mn system were prepared in the electric-arc furnace and casted in cylindrical moulds with dimensions: f=8 mm and length 12 mm. Microstructural investigations of the prepared samples were performed by using optical microscopy (OM and scanning electron microscopy, equipped by energy dispersive spectroscopy (SEM-EDS. Assignation of crystalline phases was confirmed by XRD analysis. Phase transition temperatures were determined using simultaneous thermal analyzer STA DSC/TG. Phase equilibria calculation of the ternary Cu-Al-Mn system was performed using optimized thermodynamic parameters from literature. Microstructure and phase transitions of the prepared as-cast alloys were investigated and experimental results were compared with the results of thermodynamic calculations.

  1. Study of Cu-Al-Ni-Ga as high-temperature shape memory alloys

    Science.gov (United States)

    Zhang, Xin; Wang, Qian; Zhao, Xu; Wang, Fang; Liu, Qingsuo

    2018-03-01

    The effect of Ga element on the microstructure, mechanical properties and shape memory effect of Cu-13.0Al-4.0Ni- xGa (wt%) high-temperature shape memory alloy was investigated by optical microscopy, SEM, XRD and compression test. The microstructure observation results showed that the Cu-13.0Al-4.0Ni- xGa ( x = 0.5 and 1.0) alloys displayed dual-phase morphology which consisted of 18R martensite and (Al, Ga)Cu phase, and their grain size was about several hundred microns, smaller than that of Cu-13.0Al-4.0Ni alloy. The compression test results proved that the mechanical properties of Cu-13.0Al-4.0Ni- xGa alloys were improved by addition of Ga element owing to the grain refinement and solid solution strengthening, and the compressive fracture strains were 11.5% for x = 0.5 and 14.9% for x = 1.0, respectively. When the pre-strain was 8%, the shape memory effect of 4.2 and 4.6% were obtained for Cu-13.0Al-4.0Ni-0.5 Ga and Cu-13.0Al-4.0Ni-1.0 Ga alloys after being heated to 400 °C for 1 min.

  2. Interstitial Mn in (Ga,Mn)As: Hybridization with conduction band and electron mediated exchange coupling

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Jungwirth, Tomáš

    2007-01-01

    Roč. 112, č. 2 (2007), s. 215-219 ISSN 0587-4246 R&D Projects: GA ČR GA202/07/0456; GA MŠk OC 150 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : dilute magnetic semiconductors * impurities * carrier mediated ferromagnetism Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.340, year: 2007

  3. X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Martinez-Criado, G.; Salome, M.; Susini, J. [ESRF, Polygone Scientifique Louis Neel, 6 rue Jules Horowitz, 38000 Grenoble (France); Olguin, D. [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D.F. (Mexico); Dhar, S.; Ploog, K. [Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2006-06-15

    We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga{sub 1-x}Mn{sub x}N (0.06Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after the edge, separated around 15 eV above the pre-edge structure. We have compared the position of the edge with that of MnO (Mn{sup 2+}) and Mn{sub 2}O{sub 3} (Mn{sup 3+}). All samples studied present the same Mn oxidation state, 2{sup +}. In order to interprete the near-edge structure, we have performed ab initio calculations with a 2 x 2 x 1supercell ({proportional_to}6% Mn) using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of Mn anti-bonding t{sub 2g} bands, which are responsible for the pre-edge absorption. The shoulder and main absorption peaks are due to transitions from the valence band 1s-states of Mn to the p-contributions of the conduction bands. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Cumulation of Cu, Zn, Cd, and Mn in Plants of Gardno Lake

    Directory of Open Access Journals (Sweden)

    Trojanowski J.

    2013-04-01

    Full Text Available In the present paper there have been shown the results of research on yhe content of Zn, Cd, Cu, Mn and Pb in chosen plants of Lake Gardno.The biggest concentration of those metals has been observed in Potamogton natans and Elodea canadensis, on average Zn – 34.9, Pb -2.77, Cd – 0.62, Cu – 3.24 and Mn – 257.4 μg g-1. It has been found that the over-ground parts of the plants under analysis cumulate several times less of heavy metals than their roots. The determined enrichment factors enabled the researchers to state that Cu in the examined plants is of natural origin while Mn, Cd and Zn – of anthropogenic origin.

  5. Qualitative analysis of As, Ba, Cd, Cr, Zn, Fe, Mn, K, Hg, Pb y Cu, as constituents of Amatitlan Lake sediment by XRF

    International Nuclear Information System (INIS)

    Beltran, P.A.E.; Morales, E.A.

    1987-10-01

    Samples of fifteen sampling points were analyzed. Molybdenum X-ray tube with secondary excitation assembly, SiLi detector and deconvolution software AXIL were employed; self-standardization method based upon incoherent ratio was used for quantitative analysis of some elements. Ca, P, S, Ti, Mn, Fe, Cr, Zn, Cu, Ni, Ga, As, Pb, Ge, Sr and Pb, were found. As, Pb and Cu concentrations lower than 109 mg/lt, 119 mg/lt, and 500mg/lt, respectively, were measured. Hg was not detected. (author)

  6. CARACTERIZATION OF Cu-Al-Mn ALLOYS FABRICATED USING ARC FURNACE

    Directory of Open Access Journals (Sweden)

    Diego E. Velázquez

    2016-06-01

    Full Text Available Two alloys of Cu-Al-Mn fabricated using an arc furnace built at the Instituto de Física de Materiales Tandil (IFIMAT were studied. The manufacture of alloys containing Mn is difficult, due to their high melting point and its low vapor pressure. Moreover, Mn at high temperature easily reacts with the materials used to build crucibles or capsules. In the casting arc difficulties arise to prevent volatilization, so it is very important the choice of electrode, the source setting, cooling, and the arrangement of the pure materials into the crucible. Critical temperatures of martensitic transformation and order were determined by Differential Scanning Calorimetry (DSC. Using Optical Microscopy (OM the presence of martensite phase was determined. From the results obtained it is concluded that this method is suitable for producing Cu-Al-Mn alloys.

  7. TL and OSL properties of Mn2+-doped MgGa2O4 phosphor

    Science.gov (United States)

    Luchechko, A.; Zhydachevskyy, Ya; Maraba, D.; Bulur, E.; Ubizskii, S.; Kravets, O.

    2018-04-01

    The oxide MgGa2O4 spinel ceramics doped with Mn2+ ions was synthesized by a solid-state reaction at 1200 °C in air. The activator concentration was equal 0.05 mol% of MnO. Phase purity of the synthesized samples was analyzed by X-ray diffraction technique. This spinel ceramics show efficient green emission in the range from 470 to 550 nm with a maximum at about 505 nm under UV or X-ray excitations, which is due to Mn2+ ions. MgGa2O4: Mn2+ exhibits intense thermoluminescence (TL) and optically stimulated luminescence (OSL) after influence of ionizing radiation. Are complex nature of the TL glow curves is associated with a significant number of structural defects that are responsible for the formation of shallow and deep electron traps. In this work, time-resolved OSL characteristics of the samples exposed to beta particles are reported for the first time. A light from green LED was used for optical stimulation. Obtained TL and OSL results suggest MgGa2O4:Mn2+ as perspective material for further research and possible application in radiation dosimetry.

  8. Study of the Local Environment of Mn Ions Implanted in GaSb

    International Nuclear Information System (INIS)

    Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Barcz, A.; Hallen, A.; Arvanitis, D.

    2010-01-01

    The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation. (author)

  9. Bandgap- and Radial-Position-Dependent Mn-Doped Zn-Cu-In-S/ZnS Core/Shell Nanocrystals.

    Science.gov (United States)

    Peng, Lucheng; Huang, Keke; Zhang, Zhuolei; Zhang, Ying; Shi, Zhan; Xie, Renguo; Yang, Wensheng

    2016-03-03

    This paper presents a mechanistic study on the doping of Zn-Cu-In-S/ZnS core/shell quantum dots (QDs) with Mn by changing the Zn-Cu-In-S QD bandgap and dopant position inside the samples (Zn-Cu-In-S core and ZnS shell). Results show that for the Mn:Zn-Cu-In-S/ZnS system, a Mn-doped emission can be obtained when the bandgap value of the QDs is larger than the energy of Mn-doped emission. Conversely, a bandgap emission is only observed for the doped system when the bandgap value of QDs is smaller than the energy gap of the Mn-doped emission. In the Zn-Cu-In-S/Mn:ZnS systems, doped QDs show dual emissions, consisting of bandgap and Mn dopant emissions, instead of one emission band when the value of the host bandgap is larger than the energy of the Mn-doped emission. These findings indicate that the emission from Mn-doped Zn-Cu-In-S/ZnS core/shell QDs depends on the bandgap of the QDs and the dopant position inside the core/shell material. The critical bandgap of the host materials is estimated to have the same value as the energy of the Mn d-d transition. Subsequently, the mechanism of photoluminescence properties of the Mn:Zn-Cu-In-S/ZnS and Zn-Cu-In-S/Mn:ZnS core/shell QD systems is proposed. Control experiments are then carried out by preparing Mn-doped Zn(Cu)-In-S QDs with various bandgaps, and the results confirm the reliability of the suggested mechanism. Therefore, the proposed mechanism can aid the design and synthesis of novel host materials in fabricating doped QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Effect of short-range order on magnetic and transport properties of Fe2MnGa Heusler alloy films

    Science.gov (United States)

    Kudryavtsev, Y. V.; Melnyk, A. K.; Trachevskyi, V. V.; Gościańska, I.; Dubowik, J.

    2017-11-01

    Fe56Mn20Ga24, Fe46Mn35Ga19 and Fe39Mn25Ga36 Heusler alloy (HA) films are investigated. It is shown that as-deposited Fe-Mn-Ga films are fine crystalline with a body-centered cubic (BCC) structure. Annealing of the films leads to the formation of a face-centered cubic (FCC) structure. The BCC to FCC transformation results in a drastic increase in the magnetization, the Curie temperature as well as in a change of the sign of temperature coefficient of resistivity from negative to positive. These effects are discussed in terms of band structures of L21 and L12 phases of stoichiometric Fe2MnGa HA.

  11. Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets

    Science.gov (United States)

    Zhu, Lijun; Zhao, Jianhua

    2013-05-01

    In this article, we review the recent progress in synthesis, characterization and related spintronic devices of tetragonal Mn x Ga alloys with L10 or D022 ordering. After a brief introduction to the growing demands for perpendicularly magnetized materials and the prospective candidate of Mn x Ga, we focus on lattice structures and synthesis of Mn x Ga bulks, and epitaxial growth, structural characterization and magnetic properties of Mn x Ga films. Then we discuss effective ways to tailor and improve the structure and magnetism for possible applications in spintronics, magnetic recording and permanent magnets. Finally, we outline the recent progress in spin polarization, magnetic damping, magneto-optical and magneto-transport behaviors and thermal and chemical stability of Mn x Ga films and related spintronic devices like magnetic tunneling junctions, spin valves and spin injectors into semiconductors.

  12. Magnetoelastic effects and magnetic anisotropy in Ni.sub.2./sub.MnGa polycrystals

    Czech Academy of Sciences Publication Activity Database

    Albertini, F.; Morellon, L.; Algarabel, P. A.; Ibarra, M. R.; Pareti, L.; Arnold, Zdeněk; Calestini, G.

    2001-01-01

    Roč. 89, č. 10 (2001), s. 5614-5617 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z1010914 Keywords : linear thermal expansion * magnetostriction * Ni_2MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.128, year: 2001

  13. Effect of intermartensite transformation on twinning stress in Ni-Mn-Ga 10 M martensite

    Czech Academy of Sciences Publication Activity Database

    Straka, L.; Sozinov, A.; Drahokoupil, Jan; Kopecký, V.; Hänninen, H.; Heczko, Oleg

    2013-01-01

    Roč. 114, č. 6 (2013), "063504-1"-"063504-7" ISSN 0021-8979 Institutional research plan: CEZ:AV0Z10100520 Keywords : twinning stress * Ni-Mn-Ga * intermartensite transformation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  14. Different microstructures of mobile twin boundaries in 10 M modulated Ni-Mn-Ga martensite

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Straka, L.; Seiner, Hanuš

    2013-01-01

    Roč. 61, č. 2 (2013), 622-631 ISSN 1359-6454 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391 Institutional support: RVO:68378271 ; RVO:61388998 Keywords : martensitic twin microstructure * twinning interfaces * Ni-Mn-Ga martensite * mobility of twin boundary * magnetic shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.940, year: 2013 http://www.sciencedirect.com/science/article/pii/S135964541200732X

  15. Magnetic and electrical studies on Mn substituted Y-Ba-Cu-O

    International Nuclear Information System (INIS)

    Pop, A.V.; Ilonca, Gh.; Dobrota, A.; Darabont, Al.; Borodi, Gh.; Pop, V.

    1994-01-01

    The electrical resistivity and Electron Spin Resonance (ESR) measurements were performed on YBa 2 (Cu 1-x Mn x ) 3 O 7-δ samples prepared in air and oxygen respectively. The linear temperature dependence of resistivity was observed for all doped samples in the range 120 K-290 K. The observed ESR absorption spectra in samples with x=0.1 suggest the presence of antiferromagnetically interacting Mn ions. (Author) 4 Figs., 19 Refs

  16. Electronic and Optical Modeling of Solar Cell Compounds CuGaSe2 and CuInSe2

    Science.gov (United States)

    Soni, Amit; Dashora, Alpa; Gupta, Vikas; Arora, C. M.; Rérat, M.; Ahuja, B. L.; Pandey, Ravindra

    2011-11-01

    We present dielectric-function-related optical properties such as absorption coefficient, refractive index, and reflectivity of the semiconducting chalcopyrites CuGaSe2 and CuInSe2. The optical properties were calculated in the framework of density functional theory (DFT) using linear combination of atomic orbitals (LCAO) and full-potential linearized augmented plane wave (FP-LAPW) methods. The calculated spectral dependence of complex dielectric functions is interpreted in terms of interband transitions within energy bands of both chalcopyrites; for example, the lowest energy peak in the \\varepsilon2 (ω ) spectra for CuGaSe2 corresponds to interband transitions from Ga/Se-4p → Ga-4s while that for CuInSe2 emerges as due to transition between Se-4p → In-5s bands. The calculated dielectric constant, \\varepsilon1 (0) , for CuInSe2 is higher than that of CuGaSe2. The electronic structure of both compounds is reasonably interpreted by the LCAO (DFT) method. The optical properties computed using the FP-LAPW model (with scissor correction) are close to the spectroscopic ellipsometry data available in the literature.

  17. Location of Mn sites in ferromagnetic Ga.sub.1-x./sub.Mn.sub.x./sub. As studied by means of X-ray diffuse scattering holography

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Kub, Jiří; Bussetto, E.; Lausi, A.; Cukr, Miroslav; Novák, Vít; Olejník, Kamil; Wright, J.P.; Fábry, Jan

    2006-01-01

    Roč. 39, - (2006), s. 735-738 ISSN 0021-8898 R&D Projects: GA AV ČR IAA100100529; GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs ferromagnetic semiconductors * x-ray holography * diffuse scattering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.495, year: 2006

  18. Fabrication and magnetic properties of In2O3/NiMnGa core–shell nanowires

    International Nuclear Information System (INIS)

    Kim, Hyoun Woo; Na, Han Gil; Kwak, Dong Sub; Kwon, Yong Jung; Van Khai, Tran; Lee, Chongmu; Jung, Jong Hoon

    2013-01-01

    We have prepared composite nanowires consisting of In 2 O 3 and NiMnGa, in which the In 2 O 3 core was coated with a continuous layer of NiMnGa via pulsed laser deposition technique. We have verified the tubular structure of NiMnGa shell by means of transmission electron microscopy (TEM). X-ray photoelectron spectroscopy revealed the presence of Ni, Mn, and Ga elements and TEM-energy-dispersive X-ray spectroscopy indicated that these elements resided mainly in the shell region. Since X-ray diffraction patterns and lattice-resolved TEM images showed no crystalline NiMnGa phase, with scanning electron microscopy revealing that the shell is sufficiently thick (∼ 55 nm), we suggest that the shell layer is amorphous. The ferromagnetic behavior, in terms of coercive field, remanent magnetization, and saturation magnetization in the hysteresis loop, was considerably enhanced by coating the In 2 O 3 core with a NiMnGa shell layer, at the measurement temperature of 300 K as well as 5 K. We have carried out a comparison study for revealing the mechanisms, by which the ferromagnetism was enhanced by the shell-coating. Although the annealing-induced changes of In 2 O 3 core cannot be ruled out, the presence of NiMnGa phase played a decisive role in enhancing the ferromagnetic behavior of composite nanowires. - Highlights: • Heterostructures with In 2 O 3 core nanowire and NiMnGa shell are fabricated. • Ferromagnetic behavior was enhanced by the NiMnGa shell coating. • The main cause of ferromagnetic enhancement is related to the NiMnGa shell layer

  19. Antiferromagnetic structure in tetragonal CuMnAs thin films

    Czech Academy of Sciences Publication Activity Database

    Wadley, P.; Hills, V.; Shahedkhah, M.R.; Edmonds, K. W.; Campion, R. P.; Novák, Vít; Ouladdiaf, B.; Khalyavin, D.; Langridge, S.; Saidl, V.; Němec, P.; Rushforth, A.W.; Gallagher, B. L.; Dhesi, S.S.; Maccherozzi, F.; Železný, Jakub; Jungwirth, Tomáš

    2015-01-01

    Roč. 5, Nov (2015), s. 17079 ISSN 2045-2322 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.228, year: 2015

  20. Effect of alloying elements on solidification of primary austenite in Ni-Mn-Cu cast iron

    OpenAIRE

    A. Janus; A. Kurzawa

    2011-01-01

    Within the research, determined were direction and intensity of alloying elements influence on solidification way (directional orvolumetric) of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu. 50 cast shafts dia. 20 mm were analysed.Chemical composition of the alloy was as follows: 1.7 to 3.3 % C, 1.4 to 3.1 % Si, 2.8 to 9.9 % Ni, 0.4 to 7.7 % Mn, 0 to 4.6 % Cu, 0.14 to0.16 % P and 0.03 to 0.04 % S. The discriminant analysis revealed that carbon influences solidifica...

  1. Analisa K, P, Cu Dan Mn Dalam Abu Limbah Padat Pabrik Pengolahan Kelapa Sawit (PKS)

    OpenAIRE

    Wespan Simatupang, Wespan

    2010-01-01

    It has been analyzed the content of K, P, Cu and Mn in sludge ash of empty bunches, shells and pericarp fibres from palms processing.Each of sludge fraction was dried on moistureless air, then burned and the ashing purified with electric grafite furnace at 500-600oC temperature. The ash solution was made in acidify and then analized for K, Cu and Mn (with Atomic Adsorbtion Spectrophotometer method) and P was analized with Spectrophotometer Visible as blue ammonium fosfomolibdenum complexes c...

  2. Effect of Thermomagnetic Treatment on Structure and Properties of Cu-Al-Mn Alloy.

    Science.gov (United States)

    Titenko, A N; Demchenko, L D; Perekos, A O; Gerasimov, O Yu

    2017-12-01

    The paper studies the influence of magnetic field on magnetic and mechanical properties of Cu-Mn-Al alloy under annealing. The comparative analysis of the magnetic field orientation impact on solid solution decomposition processes in a fixed annealing procedure is held using the methods of low-field magnetic susceptibility, specific magnetization, and microhardness test. The paper highlights changes in the magnetic and mechanical properties of Cu-Al-Mn alloy as the result of change in a critical size of forming precipitated ferromagnetic phase and determines correlation in the behavior of magnetic and mechanical properties of the alloy, depending on a critical nucleus size of forming precipitated ferromagnetic phase.

  3. Elastic properties of Ni2MnGa from first-principles calculations

    International Nuclear Information System (INIS)

    Ozdemir Kart, S.; Cagin, T.

    2010-01-01

    Research highlights: In this study, we have performed spin-polarized total energy calculations aiming to develop microscopic understanding of magnetic shape memory behavior of Ni 2 MnGa. This paper is devoted to determine the mechanical properties of Ni 2 MnGa in both austenitic and martensitic structures. To the best of our knowledge, this work presents the elastic constants of Ni 2 MnGa in the structure of 5M martensite, for the first time. We have also re-calculated elastic constants for cubic and nonmodulated (NM) structures by using the potential with e/a = 7.5. The elastic constants are predicted by straining the cubic L2 1 , 5M pseudo-tetragonal and NM tetragonal martensitic structures. Because of the special significance of the isotropic bulk modulus, shear modulus, Young's modulus and Poisson's ratio for technological applications, we have also calculated these quantities from the elastic constants. - Abstract: Elastic properties of Ni 2 MnGa in both austenitic and martensitic structures are determined by using ab initio methods based on density functional theory (DFT) within the spin-polarized generalized-gradient approximation. The tetragonal shear elastic constant C' takes a very small value in the austenitic phase, indicating the elastic instability results in a phase transition to martensitic structure. Isotropic mechanical properties such as bulk modulus, shear modulus, Young's modulus and Poisson's ratio are predicted. The trend of the Debye temperatures calculated for three structures of Ni 2 MnGa is comparable with that of the experiment.

  4. Complex impedance spectra of chip inductor using Li-Zn-Cu-Mn ferrite

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Naoe, Masayuki; Yamada, Yoshihiro

    2006-01-01

    A multi-layer chip inductor (MCI) was fabricated using polycrystalline Li-Zn-Cu-Mn ferrite and the green-sheet technique, and its complex impedance spectrum was evaluated with the help of numerical calculations. The complex impedance spectra of the MCI component using Ni-Zn-Cu ferrite, which have been widely used for this application, were very sensitive to the residual stress and deviated much from the calculated values; however, it was found that the complex impedance spectrum of the MCI component using Li-Zn-Cu-Mn ferrite is quite well reproduced by calculation, where the complex permittivity and permeability of the polycrystalline ferrite as well as the MCI dimensions, were used. It implied that the magneto-striction effect was negligible in case of MCI using Li-Zn-Cu-Mn ferrite, and that the difference was related to magneto-strictive coefficient of the polycrystalline ferrite. Consequently, utilization of Li-Zn-Cu-Mn ferrite enabled us to easily design the complex impedance of MCI component

  5. Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Miller, R. I.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Kreitzman, S. R.; Levy, C. D. P.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Yu, K. M.; Liu, X.; Furdyna, J. K.; MacFarlane, W. A.

    2009-04-01

    A low energy beam of spin polarized 8Li + has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

  6. Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

    Science.gov (United States)

    Pearton, S. J.; Overberg, M. E.; Thaler, G.; Abernathy, C. R.; Theodoropoulou, N.; Hebard, A. F.; Chu, S. N. G.; Wilson, R. G.; Zavada, J. M.; Polyakov, A. Y.; Osinsky, A. V.; Norris, P. E.; Chow, P. P.; Wowchack, A. M.; van Hove, J. M.; Park, Y. D.

    2002-05-01

    The magnetization of p-GaN or p-AlGaN/GaN superlattices was measured after implantation with high doses (3-5×1016 cm-2) of Mn, Fe, or Ni and subsequent annealing at 700-1000 °C. The samples showed ferromagnetic contributions below temperatures ranging from 190-250 K for Mn to 45-185 K for Ni and 80-250 K for Fe. The use of superlattices to enhance the hole concentration did not produce any change in ferromagnetic ordering temperature. No secondary phase formation was observed by x-ray diffraction, transmission electron microscopy, or selected area diffraction pattern analysis for the doses we employed.

  7. Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

    Energy Technology Data Exchange (ETDEWEB)

    Song, Q., E-mail: susan@phas.ubc.c [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Chow, K.H. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Miller, R.I. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Fan, I. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Hossain, M.D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kiefl, R.F. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Canadian Institute of Advanced Research (Canada); Kreitzman, S.R.; Levy, C.D.P. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Parolin, T.J. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Pearson, M.R.; Salman, Z. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Saadaoui, H.; Smadella, M.; Wang, D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Yu, K.M. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); MacFarlane, W.A. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada)

    2009-04-15

    A low energy beam of spin polarized {sup 8}Li{sup +} has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

  8. Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

    CERN Document Server

    Pearton, S J; Thaler, G; Abernathy, C R; Theodoropoulou, N; Hebard, A F; Chu, S N G; Wilson, R G; Zavada, J M; Polyakov, A Y; Osinsky, A V; Norris, P E; Chow, P P; Wowchack, A M; Hove, J M V; Park, Y D

    2002-01-01

    The magnetization of p-GaN or p-AlGaN/GaN superlattices was measured after implantation with high doses (3-5x10 sup 1 sup 6 cm sup - sup 2) of Mn, Fe, or Ni and subsequent annealing at 700-1000 deg. C. The samples showed ferromagnetic contributions below temperatures ranging from 190-250 K for Mn to 45-185 K for Ni and 80-250 K for Fe. The use of superlattices to enhance the hole concentration did not produce any change in ferromagnetic ordering temperature. No secondary phase formation was observed by x-ray diffraction, transmission electron microscopy, or selected area diffraction pattern analysis for the doses we employed.

  9. Structure, magnetism, and electron-transport properties of Mn2CrGa-based nanomaterials

    Directory of Open Access Journals (Sweden)

    Wenyong Zhang

    2016-05-01

    Full Text Available Mn2CrGa in the disordered cubic structure has been synthesized using rapid quenching and subsequent annealing. The cubic phase transforms to a stable tetragonal phase when a fraction of Cr or Ga is replaced by Pt or Al, respectively. All samples are ferrimagnetic with high Curie temperatures (Tc; Mn2CrGa exhibits the highest Tc of about 813 K. The tetragonal samples have appreciable values of magnetocrystalline anisotropy energy, which leads to an increase in coercivity (Hc that approaches about 10 kOe in the Pt-doped sample. The Hc linearly increases with a decrease of temperature, concomitant with the anisotropy change with temperature. All samples are metallic and show negative magnetoresistance with room-temperature resistivities on the order of 1 mΩcm. The magnetic properties including high Tc and low magnetic moment suggest that these tetragonal materials have potential for spin-transfer-torque-based devices.

  10. Charge and orbital orders and structural instability in high-pressure quadruple perovskite CeCuMn6O12

    Science.gov (United States)

    Zhang, Lei; Matsushita, Yoshitaka; Katsuya, Yoshio; Tanaka, Masahiko; Yamaura, Kazunari; Belik, Alexei A.

    2018-02-01

    We prepared a quadruple perovskite CeCuMn6O12 under high-pressure and high-temperature conditions at 6 GPa and about 1670 K and investigated its structural, magnetic and transport properties. CeCuMn6O12 crystallizes in space group Im-3 above T CO  =  297 K below this temperature, it adopts space group R-3 with the 1:3 (Mn4+:Mn3+) charge and orbital orders. Unusual compressed Mn3+O6 octahedra are realized in CeCuMn6O12 similar to CaMn7O12 with the  ‑Q 3 Jahn–Teller distortion mode. Below about 90 K, structural instability takes place with phase separation and the appearance of competing phases; and below 70 K, two R-3 phases coexist. CeCuMn6O12 exhibits a ferromagnetic-like transition below T C  =  140 K, and it is a semiconductor with the magnetoresistance reaching about  ‑40% at 140 K and 70 kOe. We argued that the valence of Ce is  +3 in CeCuMn6O12 with the Ce3+(C{{u}2+}Mn23+ )(Mn33+M{{n}4+} )O12 charge distribution in the charge-ordered R-3 phase and Ce3+(C{{u}2+}Mn23+ )(Mn43.25+ )O12 in the charge-disordered Im-3 phase.

  11. A photoemission study of Mn grown on GaAs(100)

    International Nuclear Information System (INIS)

    James, D.; Riley, J.; Leckey, R.; Usher, B.; Sieber, N.; Seyller, Th.; Ley, L.

    2002-01-01

    Full text: Metal contacts on semiconductors have been an important area for device manufacture. The possibility of lattice matched growth of magnetic metals on semiconductors was once thought to be a unobtainable goal. More recently it has been found that transition metals can react with the semiconductor substrates, forming another lattice with a more comparable lattice constant, from which epitaxial growth can then proceed. Al grows epitaxially on GaN even with a lattice mismatch greater than 10%. In this instance, Al displaces Ga being driven by a larger heat of formation to produce an AlN buffer layer, on which Al can then grow. This paper investigates the room temperature deposition of Mn onto GaAs(100) at room temperature. The Photoemission study was carried out at the UEL56/2 PGM2 beam line at BESSY II in Berlin, Germany. Synchrotron radiation was used to observe the surface as thin layers of Mn were deposited. The interaction of manganese with the substrate tends to donate electron density to neighbouring atoms, decreasing binding energy. No further segregation of substitutional or interstitial Mn and Ga can be seen from angle dependence data at this temperature, with metallic manganese eventually attenuating the bulk Ga signal to the point where it is indistinguishable from the background. It is concluded that there the metal reacts with the semiconductor surface with some indiffusion as confirmed using SIMS. Previously, the reaction was only thought to have taken place above room temperature. The resulting structure consists of a Ga-As-Mn buffer layer as with the higher temperature depositions

  12. Competitive segregation of gallium and indium at heterophase Cu-MnO interfaces studied with transmission electron microscopy

    NARCIS (Netherlands)

    Mogck, S.; Kooi, B.J.; de Hosson, J.T.M.

    2003-01-01

    This paper concentrates on the possible segregation of indium and gallium and competitive segregation of gallium and indium at atomically flat parallel {111}-oriented Cu-MnO interfaces. The segregation of gallium at Cu-MnO interfaces after introduction of gallium in the copper matrix of internally

  13. Quantitative analysis of the persistent photoconductivity effect in Cu(In,Ga)Se2

    Science.gov (United States)

    Maciaszek, Marek; Zabierowski, Paweł

    2018-04-01

    The magnitude of the persistent photoconductivity effect (PPC) in two sets of Cu(In,Ga)Se2 samples, differing in the amount of cadmium and sodium, was measured. Using equations describing the magnitude of PPC, metastable defect and shallow acceptor densities were calculated. The method of the analysis of PPC in the presence of a deep acceptor level was presented. Based on obtained results, we drew conclusions about reasons of decreased PPC in Cu(In,Ga)Se2 without sodium as well as the role of (VSe-VCu) complexes in establishing the carrier concentration in Cu(In,Ga)Se2 with and without sodium.

  14. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  15. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  16. Tuning the magnetic interactions in GaAs:Mn/MnAs hybrid structures by controlling shape and position of MnAs nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Elm, Matthias Thomas

    2010-07-01

    In this work the magnetic properties of hexagonal MnAs nanoclusters and their influence on the transport properties of GaAs:Mn /MnAs hybrid structures were studied. Various arrangements of isolated nanoclusters and cluster chains were grown on (111)B-GaAs substrates by SA-MOVPE. The first part of this work deals with the manufacturing process of the different cluster arrangements investigated. By a suitable pre-structuring of the substrate it was possible to influence the cluster size, cluster shape and cluster position systematically. Preparing various arrangements it could be shown that the hexagonal nanoclusters prefer to grow along their a-axes. In the second part, the magnetic properties of the nanoclusters were studied. Ferromagnetic resonance (FMR) measurements show a hard magnetic axis perpendicular to the sample plane, i.e. parallel to the c-axis. By measurements, where the magnetic field was rotated in the sample plane, it could be demonstrated that the orientation of the magnetization can be forced into a certain direction by controlling the cluster shape. These results are confirmed by measurements using magnetic force microscopy. The third part deals with the influence of the nanoclusters and their arrangement on the transport properties of the GaAs:Mn matrix. For temperatures above 30 K the structures investigated show positive as well as negative magnetoresistance effects, which are typical for granular GaAs:Mn/MnAs hybrid structures. This behaviour can be explained in the context of transport in extended band states. The size of the magnetoresistance effects correlates strongly with the respective cluster arrangement of the sample. This behaviour has been predicted theoretically and could be confirmed experimentally in the context of this work. Below 30 K large positive magnetoresistance effects show up for the regular cluster arrangements, which cannot be observed for hybrid structures with random cluster distributions. These large positive

  17. Electrodeposition and Characterization of Mn-Cu-Zn Alloys for Corrosion Protection Coating

    Science.gov (United States)

    Tsurtsumia, Gigla; Gogoli, David; Koiava, Nana; Kakhniashvili, Izolda; Jokhadze, Nunu; Lezhava, Tinatin; Nioradze, Nikoloz; Tatishvili, Dimitri

    2017-12-01

    Mn-Cu-Zn alloys were electrodeposited from sulphate bath, containing citrate or EDTA and their mixtures as complexing ligands. The influence of bath composition and deposition parameters on alloys composition, cathodic current efficiency and structural and electrochemical properties were studied. At a higher current density (≥ 37.5 A dm-2) a uniform surface deposit of Mn-Cu-Zn was obtained. Optimal pH of electrolyte (0.3 mol/dm3Mn2+ + 0.6 mol/dm3 (NH4)2SO4 +0.1 mol/dm3Zn2++0.005 mol/dm3 Cu2++ 0.05mol/dm3Na3Cit + 0.15mol/dm3 EDTA; t=300C; τ=20 min) for silvery, nonporous coating of Mn-Cu-Zn alloy was within 6.5-7.5; coating composition: 71-83% Mn, 6-7.8% Cu, 11.5-20% Zn, current efficiency up to 40%. XRD patterns revealed BCT (body centred tetragonal) γ-Mn solid phase solution (lattice constants a=2.68 Å c=3.59 Å). Corrosion measurements of deposited alloys were performed in aerated 3.5% NaCl solution. The corrosion current density (icorr) of the electrodeposited alloys on carbon steel was 10 times lower than corrosion rate of pure zinc and manganese coatings. Triple alloy coatings corrosion potential (Ecorr = -1140 mV vs. Ag/AgCl) preserved negative potential value longer (more than three months) compared to carbon steel substrate (Ecorr = -670 mV vs. Ag/AgCl). Tafel polarization curves taken on Mn-Cu-Zn alloy coating in aerated 3.5% NaCl solution did not show a typical passivation behaviour which can be explained by formation oflow solubility of adherent corrosion products on the alloy surface. Corrosion test of Mn-Cu-Zn electrocoating in chlorine environment shows that it is the best cathodic protective coating for a steel product.

  18. Crystal structure of the Re(Mn, Cu)6 (Re=Ce, Pr, Nd, Sm, Gd) and RE(Mn, Ni)3 (RE=Nd, Sm) compounds

    International Nuclear Information System (INIS)

    Kalychak, Ya.M.; Davydyuk, P.P.; Bodak, O.I.

    1984-01-01

    A crystalline structure of REE(Mn, Cu) 6 compounds is studied by the method of monocrystal and powder using Ce(Mn, Cu) 6 compound as an example. For the Cesub(0.143)Mnsub(0.220)Cusub(0.637) monocrystal a=0.65781(6), c=0.50454(6)nm, a diffraction class is 4/mmm. Isostructural compound lattice periods at Mn content of 0.220 a parts are equal to: a=0.65666(6), c=0.50280(6)nm for Pr(Mn, Cu) 6 ; a=0.6560(3), c=0.5013(3)nm for Nd(Mn, Cu) 6 ; a=0.65220(6), c=0.49975(9)nm for Sm(Mn, Cu) 6 ; a=0.6520(1), c=0.4965(1)nm for Gd(Mn, Cu) 6 . Nd(Mn, Ni) 3 and Sm(Mn, Ni) 3 structures are studied by the powder method. Diffractograms of these compounds are displayed successfully in the P6 3 /mmc space group at a=0.5183(3), c=1.676(1)nm for Smsub(0.25)Mnsub(0.35)Nisub(0.40) and at a=0.5152(2), c=1.6710(6)nm for Ndsub(0.25)Mnsub(0.25)Nisub(0.50). Refinement of the structure is conducted using Sm(Mn, Ni) 3 as an example to confirm the belonging of these compounds to the CeNi 3 type, when disposing Sm atoms in positions of Ce atoms and statistical mixture (Mn, Ni) atoms in positions of Ni atoms

  19. The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures

    International Nuclear Information System (INIS)

    Feng, Yu; Tian, Chun-lin; Yuan, Hong-kuan; Kuang, An-long; Chen, Hong

    2015-01-01

    We study the effect of disorder, including swap and antisite, on the electronic and magnetic properties of heterostructures by using extensive first-principles calculations within density functional theory. Thirteen kinds of swap disorders and sixteen kinds of antisite disorders are proposed and studied comprehensively. Our calculation reveals that disorders at the interface have low formation energies, indicating that disorders are most likely to appear at the interface instead of the deep layer. Among all kinds of disorders, Mn 1 (Al) (where the interface Mn is occupied by an Al atom) and Mn 1 (As) (where the interface Mn is occupied by an As atom from a GaAs slab) antisite disorders possess the lowest formation energies. This shows that the interface Mn has a higher probability of being replaced by an Al atom, and that an As atom from a GaAs slab easily diffuses into a Mn 2 CoAl slab and occupies the position of the interface Mn. Moreover, further study on the interface electronic structure reveals that interface spin polarization suffers dramatic reduction due to Mn 1 (Al) and Mn 1 (As) antisite disorders. It can be deduced that the interface state, together with Mn 1 (Al) and Mn 1 (As) antisite disorders, may be the main causes of the low TMR ratio of Mn 2 CoAl/GaAs heterostructures. (paper)

  20. Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells

    Science.gov (United States)

    Dimitriev, G. S.; Sapega, V. F.; Averkiev, N. S.; Panaiotti, I. E.; Ploog, K. H.

    2017-11-01

    The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.

  1. Effects on Magnetic Properties of GaMnAs Induced by Proximity of Topological Insulator Bi2Se3

    Science.gov (United States)

    Bac, Seul-Ki; Lee, Hakjoon; Lee, Sangyeop; Choi, Seonghoon; Lee, Sanghoon; Liu, X.; Dobrowolska, M.; Furdyna, J. K.

    2018-04-01

    Effects induced by a topological insulator Bi2Se3 on the magnetic properties of an adjacent GaMnAs film have been investigated using transport measurements. We observed three conspicuous effects in the GaMnAs layer induced by the proximity of the Bi2Se3 overlayer. First, our resistivity data as a function of temperature show that the GaMnAs layer adjacent to the Bi2Se3 displayed strongly metallic behavior, as compared with the GaMnAs control specimen. Second, the Curie temperature of the GaMnAs in the bilayer was observed to be higher than that of the control layer, in our case by nearly a factor of two. Finally, we observed significant changes in the in-plane magnetic anisotropy of the GaMnAs in the bilayer, in the form of much higher values of both cubic and uniaxial anisotropy parameters. This latter feature manifests itself in a rather spectacular increase of the coercive field observed in magnetization reversal across the in-plane hard axis. These results suggest that proximity of an adjacent Bi2Se3 layer represents an important tool for modifying and controlling the ferromagnetic properties of GaMnAs film, and could thus be used to optimize this and similar materials for applications in spintronic devices.

  2. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  3. Fine scale remobilisation of Fe, Mn, Co, Ni, Cu and Cd in contaminated marine sediment

    DEFF Research Database (Denmark)

    Tankere-Muller, Sophie; Zhang, Hao; Davison, William

    2007-01-01

    to less than 0.3 μM. With both DET and DGT measurements, there were sharply defined maxima of Cu and Cd within 2 mm of the sediment water interface, consistent with their release from organic material as it is oxidised. There was a Co maximum about 5–8 mm lower than the Cu and Cd maxima, apparently...... that the localised mobilisation of metals was associated with recent diagenetic processes, rather than the depositional history. There were substantial fluxes of Cu and Cd to the overlying water. Even though there were steep gradients of Fe, Mn, Ni and Co within 1 cm of the sediment–water interface...

  4. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    Science.gov (United States)

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  5. Disorder-induced critical phenomena in magnetically glassy Cu-Al-Mn alloys

    Czech Academy of Sciences Publication Activity Database

    Marcos, J.; Vives, E.; Manosa, L.; Acet, M.; Duman, E.; Morin, M.; Novák, Václav; Planes, A.

    2003-01-01

    Roč. 67, č. 22 (2003), 224406/1-224406/5 ISSN 0163-1829 Institutional research plan: CEZ:AV0Z1010914 Keywords : Cu-Mn-Al alloys * magnetic hysteresis loops Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  6. Levels Of Mn, Fe, Ni, Cu, Zn And Cd, In Effluent From A Sewage ...

    African Journals Online (AJOL)

    This study reports the results of preliminary investigation of heavy metal levels-Ni, Cd, Fe, Zn, Cu and Mn; pH; temperature and electrical conductivity in effluents from a sewage treatment oxidation pond and its receiving stream. The heavy metal concentrations were determined with Inductively Coupled Plasma-Mass ...

  7. Engineering hierarchical Diatom@CuO@MnO2 hybrid for high performance supercapacitor

    Science.gov (United States)

    Zhang, Yan; Guo, Wan Wan; Zheng, Tian Xu; Zhang, Yu Xin; Fan, Xing

    2018-01-01

    A rational and hierarchical Diatom@CuO@MnO2 hybrid was fabricated via a facile electroless copper plating technology, following by a one-pot hydrothermal reaction with KMnO4. Such unique architecture acts as a supercapacitor electrode, which exhibits a high specific capacitance (240 F g-1 at a current density of 0.5 A g-1), good rate capability (58.3% retention when the current density increases from 0.5 to 5 A g-1), and excellent electrochemical cycling stability (91.2% retention of the initial specific capacitance after 4000 cycles at a current density of 2 A g-1). The impressive electrochemical performance of this Diatom@CuO@MnO2 electrode ascribed to the synergistic effect between the CuO particles and MnO2 nanosheets. Therefore, it can be expected that this unique Diatom@CuO@MnO2 electrode may have great promise for the application in supercapacitors.

  8. Adsorption of Cu (II) onto Bamboo Supported Manganese (BS-Mn ...

    African Journals Online (AJOL)

    PROF HORSFALL

    bulk density (0.0035 gcm-3); specific surface area (33.00 m2/g) by Saer's method and functional group of BS-Mn nanocomposite determined using Fourier Transform Infrared Spectrophotometer (FTIR). Various operational parameters affecting adsorption of. Cu(II) such as adsorbent dose (100 mg), pH (6), contact time (90 ...

  9. Cu (II), Zn (II) andMn (II) complexes of poly (methyl vinyl ether-alt ...

    Indian Academy of Sciences (India)

    MVE-alt-MA)) with Zn(II), Mn(II) and Cu(II) ions were synthesized from the reaction of the aqueous solution of copolymer and metal(II) chlorides at different temperatures ranging from 25° to 40°C. Elemental analysis of themetal-polymer complexes ...

  10. Synthesis and characterisation of Cu (II), Ni (II), Mn (II), Zn (II) and ...

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Chemical Sciences; Volume 113; Issue 3. Synthesis and characterisation of Cu(II), Ni(II), Mn(II), Zn(II) and VO(II) Schiff base complexes derived from o-phenylenediamine and acetoacetanilide. N Raman Y Pitchaikani Raja A Kulandaisamy. Inorganic Volume 113 Issue 3 June 2001 pp 183-189 ...

  11. Thermoelastic martensite and shape memory effect in ductile Cu-Al-Mn alloys

    Science.gov (United States)

    Kainuma, R.; Takahashi, S.; Ishida, K.

    1996-08-01

    Ductile shape memory (SM) alloys of the Cu-AI-Mn system have been developed by controlling the degree of order in the β phase. Additions of Mn to the binary Cu-Al alloy stabilize the β phase and widen the single-phase region to lower temperature and lower Al contents. It is shown that Cu-Al-Mn alloys with low Al contents have either the disordered A2 structure or the ordered L21 structure with a lower degree of order and that they exhibit excellent ductility. The disordered A2 phase martensitically transforms to the disordered Al phase with a high density of twins. The martensite phase formed from the ordered L21 phase has the 18R structure. The SM effect accompanies both the A2 → Al and L21 → 18R martensitic transformations. These alloys exhibit 15 pct strain to failure, 60 to 90 pct rolling reduction without cracking, and 80 to 90 pct recovery from bend test in the martensitic condition. Experimental results on the microstructure, crystal structure, mechanical properties, and shape memory behavior in the ductile Cu-AI-Mn alloys are presented and discussed.

  12. Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

    Science.gov (United States)

    Yuan, Ye; Xu, Chi; Hübner, René; Jakiela, Rafal; Böttger, Roman; Helm, Manfred; Sawicki, Maciej; Dietl, Tomasz; Zhou, Shengqiang

    2017-10-01

    Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): G a1 -xM nxAs and I n1 -xM nxAs . In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in I n1 -xM nxAs compared to G a1 -xM nxAs with the same Mn concentration x . This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism. Furthermore, the findings support strongly the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the metal-insulator transition.

  13. Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes inGaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Wang, J.; Cotoros, I.; Dani, K.M.; Liu, X.; Furdyna, J.K.; Chemla, D.S.

    2007-02-17

    We report on the observation of ultrafast photo-enhanced ferromagnetism in GaMnAs. It is manifested as a transient magnetization increase on a 100-ps time scale, after an initial sub-ps demagnetization. The dynamic magnetization enhancement exhibits a maximum below the Curie temperature {Tc} and dominates the demagnetization component when approaching {Tc}. We attribute the observed ultrafast collective ordering to the p-d exchange interaction between photoexcited holes and Mn spins, leading to a correlation-induced peak around 20K and a transient increase in {Tc}.

  14. Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

    Science.gov (United States)

    Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

  15. Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Horodyská, P.; Tesařová, N.; Němec, P.; Šubrt, J.; Malý, P.; Kužel, Petr; Kadlec, Christelle; Mašek, Jan; Němec, I.; Orlita, Milan; Novák, Vít; Olejník, Kamil; Šobáň, Zbyněk; Vašek, Petr; Svoboda, Pavel; Sinova, Jairo

    2010-01-01

    Roč. 105, č. 22 (2010), 227201/1-227201/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  16. Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

    Science.gov (United States)

    Yanagi, Hiroshi; Watanabe, Takumi; Kodama, Katsuaki; Iikubo, Satoshi; Shamoto, Shin-ichi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2009-05-01

    Electronic and magnetic properties of a layered compound LaMnPO are examined in relation to a newly discovered iso-structural superconductor LaFeAs(P)O. Neutron diffraction measurements, together with temperature dependent magnetic susceptibility, clarify that LaMnPO is an antiferromagnet at least up to 375 K. The spin moment of a Mn ion is determined to be 2.26 μB at room temperature, and the spin configuration is antiparallel in the Mn-P plane and parallel between the Mn-P planes, which is rather different from that of LaFeAsO. Optical absorption spectra, photoemission spectra, and temperature dependent electrical conductivity indicate that LaMnPO is a semiconductor. Furthermore, nominally undoped LaMnPO exhibits n-type conduction while the conduction type is changed by doping of Cu or Ca to the La sites, indicating that LaMnPO is a bipolar conductor. Density functional calculation using the GGA+U approximation supports the above conclusions; the electronic band structure has an open band gap and the antiferromagnetic spin configuration is more stable than the ferromagnetic one.

  17. One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

    Science.gov (United States)

    Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

    2005-03-01

    Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

  18. Molecular controls on Cu and Zn isotopic fractionation in Fe-Mn crusts

    Science.gov (United States)

    Little, S. H.; Sherman, D. M.; Vance, D.; Hein, J. R.

    2014-06-01

    The isotopic systems of the transition metals are increasingly being developed as oceanic tracers, due to their tendency to be fractionated by biological and/or redox-related processes. However, for many of these promising isotope systems the molecular level controls on their isotopic fractionations are only just beginning to be explored. Here we investigate the relative roles of abiotic and biotic fractionation processes in controlling modern seawater Cu and Zn isotopic compositions. Scavenging to Fe-Mn oxides represents the principal output for Cu and Zn to sediments deposited under normal marine (oxic) conditions. Using Fe-Mn crusts as an analogue for these dispersed phases, we investigate the phase association and crystal chemistry of Cu and Zn in such sediments. We present the results of an EXAFS study that demonstrate unequivocally that Cu and Zn are predominantly associated with the birnessite (δ-MnO2) phase in Fe-Mn crusts, as previously predicted from sequential leaching experiments (e.g., Koschinsky and Hein, 2003). The crystal chemistry of Cu and Zn in the crusts implies a reduction in coordination number in the sorbed phase relative to the free metal ion in seawater. Thus, theory would predict equilibrium fractionations that enrich the heavy isotope in the sorbed phase (e.g., Schauble, 2004). In natural samples, Fe-Mn crusts and nodules are indeed isotopically heavy in Zn isotopes (at ∼1‰) compared to deep seawater (at ∼0.5‰), consistent with the predicted direction of equilibrium isotopic fractionation based on our observations of the coordination environment of sorbed Zn. Further, ∼50% of inorganic Zn‧ is chloro-complexed (the other ∼50% is present as the free Zn2+ ion), and complexation by Cl- is also predicted to favour equilibrium partitioning of light Zn isotopes into the dissolved phase. The heavy Zn isotopic composition of Fe-Mn crusts and nodules relative to seawater can therefore be explained by an inorganic fractionation during

  19. Microstructure and corrosion resistance of Sm-containing Al-Mn-Si-Fe-Cu alloy

    Directory of Open Access Journals (Sweden)

    Han Yuyin

    2017-12-01

    Full Text Available Optimizing alloy composition is an effective way to improve physical and chemical properties of automobile heat exchanger materials.A Sm-containing Al-Mn-Si-Fe-Cu alloy was investigated through transmission electron microscopy,scanning electron microscopy,and electrochemical measurement.Experimental results indicated that main phases distributed in the alloy wereα-Al(Mn,FeSi,Al2Sm and Al10Cu7Sm2.Alloying with Sm element could refine the precipitated α-Al(Mn,FeSi phase.Polarization testing results indicated that the corrosion surfacewas mainly composed of pitting pits and corrosion products.Sea water acetic acid test(SWAAT showed that corrosion loss increased first and then slowed downwith increase of the corrosion time.

  20. Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment

    Czech Academy of Sciences Publication Activity Database

    Zemen, Jan; Kučera, Jan; Olejník, Kamil; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 15 (2009), 155203/1-155203/29 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801; NAMASTE(XE) FP-7214499 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute magnetic semiconductor * magnetic anisotropy * Ga,Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://arxiv.org/abs/0904.0993

  1. Synthesis of highly efficient azure-to-blue-emitting Zn-Cu-Ga-S quantum dots.

    Science.gov (United States)

    Kim, Bu-Yong; Kim, Jong-Hoon; Lee, Ki-Heon; Jang, Eun-Pyo; Han, Chang-Yeol; Jo, Jung-Ho; Jang, Ho Seong; Yang, Heesun

    2017-04-06

    To realize blue emission-capable non-Cd I-III-VI quantum dots (QDs), we explore the synthesis of ternary Cu-Ga-S (CGS) QDs and subsequent quaternary Zn-Cu-Ga-S (ZCGS) via Zn alloying into a CGS host. The resulting ZCGS/ZnS core/shell QDs possess not only Zn content-dependent tunable emissions in the azure-to-blue range but also exceptional quantum yields of 78-83%.

  2. Surface Modification of Cu(In,Ga)Se2 Grains

    Science.gov (United States)

    Alruqobah, Essam H.

    Nearly all of the world’s energy demand today is being met by the use of non-renewable energy sources. With the worldwide energy demand projected to increase in the coming years, it is vital to find alternative and renewable energy sources. Among the available renewable energy sources, solar energy is the most promising in meeting the worldwide energy demand. Recently, thin film solar cells have garnered attention due to their thinner architecture and relatively high optical absorption coefficients, as opposed to the conventional crytslline silicon solar cells. One of the most promising thin-film solar cell absorber materials is Cu(In,Ga)Se2 (CIGSe), achieving power conversion efficiencies approaching those of crystalline Si. The highest efficiency CIGSe devices were made via costly vacuum-based co-evaporation process. CIGSe devices made from solution-processed methods have also garnered attention due to their lower costs, and their efficiencies have increased considerably in recent years. In this thesis, CIGSe absorber layers are fabricated via the solution-processed from nanoparticle-based sulfide CIGS. The most important step in fabrication of a CIGSe solar cell absorber layer is the selenization step, which is the thermal sintering of a CIGSe precursor layer in the presence of selenium vapor to achieve large, dense selenide grains that are required for adequate PV performance. It is determined that maintaining adequate selenium vapor pressure on the substrate during the selenization and subsequent cooldown is crucial in producing high efficiency solar cell devices. Furthermore, exposing the CIGSe grains to a Se-deficient atmosphere causes Se to evaporate from the grains, and subsequently modifying the CIGSe grain surface. The modified grain surface adversely impacts the PV performance of the final solar cell device by forming defects due to the decrease in selenium concentration. These defects are manifested in increased current shunting, and decrease the

  3. Superparamagnetism in CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grima-Gallardo, P.; Alvarado, F.; Munoz, M.; Duran, S.; Quintero, M.; Nieves, L.; Quintero, E.; Tovar, R.; Morocoima, M. [Centro de Estudios en Semiconductores (CES), Fac. Ciencias, Dpto. Fisica, Universidad de Los Andes, Merida (Venezuela); Ramos, M.A. [Laboratorio de Difraccion y Fluorescencia de Rayos-X, Instituto Zuliano de Investigaciones Tecnologicas (INZIT), La Canada de Urdaneta, Estado Zulia (Venezuela)

    2012-06-15

    The temperature dependencies of DC magnetic susceptibilities, {chi}(T), of CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys were measured in a SQUID apparatus using the protocol of field cooling (FC) and zero FC (ZFC). The FC curves of both samples reflect a weak ferromagnetic (or ferrimagnetic) behavior with a nearly constant value of {chi}(T) in the measured temperature range (2-300 K) indicating that the critical temperatures (T{sub c}) are >300 K. The ZFC curves diverges from FC, showing irreversibility temperatures (T{sub irr}) of {proportional_to}250 K for CuFeInTe{sub 3} and >300 K for CuFeGaTe{sub 3}, suggesting that we are dealing with cluster-glass systems in a superparamagnetic state. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Large phase coherence effects in GaMnAs-based nanostructures: Towards a quantum spintronics

    International Nuclear Information System (INIS)

    Giraud, R.; Vila, L.; Lemaitre, A.; Faini, G.

    2007-01-01

    Quantum coherent transport of spin-polarized carriers is observed on a very unusual large scale within epitaxial nanowires of GaMnAs, a diluted ferromagnetic semiconductor. From the analysis of the amplitude of strong universal conductance fluctuations, an effective phase coherence length of about 100 nm is inferred at T=100 mK, which is one order of magnitude larger than in a granular 3d-metal ferromagnets. Together with the temperature and bias dependence of these reproducible fluctuations, their wire-length dependence is studied in single-domain sub-micron long nanowires with a perprendicular anisotropy. In particular, variations for two equivalent probe configurations are shown when the length becomes comparable to the actual phase coherence length. This result forecasts the possible observation of non-local voltage drops in GaMnAs nanostructures smaller than about 200 nm. Generally speaking, this research contributes to pave the way towards the realization of quantum spintronics devices

  5. Isomagnetic martensitic transformation in Ni sub 2 MnGa alloys

    CERN Document Server

    Glavatska, N I

    2000-01-01

    An effect of the magnetic field on the martensitic transformation and the change in the martensitic variants of the alloy Ni sub 2 MnGa containing (at%) 49.6 Ni, 28.4 Mn and 22.0 Ga was studied using X-ray diffraction. It is shown that the applied magnetic field induces martensitic transformation and initiates the development of a preferential martensitic variant. These processes are extended in time, which resembles the isothermal martensitic transformation observed in iron-based alloys. The kinetics of transformation under magnetic field and the after-effect when the field is taken out are studied. The kinetics is shown to depend on the orientation of the applied field in relation to the direction of easy magnetization 1 0 0. The strain induced by the magnetic field is measured and the time dependence of the strain is found in consistence with the results of X-ray diffraction study.

  6. Transport through (Ga,Mn)As nanoislands: Coulomb blockade and temperature dependence of the conductance

    Science.gov (United States)

    Schlapps, Markus; Lermer, Teresa; Geissler, Stefan; Neumaier, Daniel; Sadowski, Janusz; Schuh, Dieter; Wegscheider, Werner; Weiss, Dieter

    2009-09-01

    We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature-dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valvelike behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction.

  7. Efficiency of Energy Harvesting in Ni-Mn-Ga Shape Memory Alloys

    Science.gov (United States)

    Lindquist, Paul; Hobza, Tony; Patrick, Charles; Müllner, Peter

    2018-03-01

    Many researchers have reported on the voltage and power generated while energy harvesting using Ni-Mn-Ga shape memory alloys; few researchers report on the power conversion efficiency of energy harvesting. We measured the magneto-mechanical behavior and energy harvesting of Ni-Mn-Ga shape memory alloys to quantify the efficiency of energy harvesting using the inverse magneto-plastic effect. At low frequencies, less than 150 Hz, the power conversion efficiency is less than 0.1%. Power conversion efficiency increases with (i) increasing actuation frequency, (ii) increasing actuation stroke, and (iii) decreasing twinning stress. Extrapolating the results of low-frequency experiments to the kHz actuation regime yields a power conversion factor of about 20% for 3 kHz actuation frequency, 7% actuation strain, and 0.05 MPa twinning stress.

  8. Effects of Ga doping on the electric and magnetic properties of DyMn1-xGaxO3

    Science.gov (United States)

    Li, S. Z.; Chen, S. S.; Wang, X. Z.; Liu, J. M.

    2018-02-01

    Ga3+ for Mn3+ substitution in multiferroic DyMn1-xGaxO3(x = 0, 0.02, 0.05, 0.1, 0.2, 0.3 and 0.4) has been performed to study the change on Mn3+ ordering, which also influences on the ordering of Dy3+. The samples are pure and their dielectric constant, electric polarization and magnetic properties have been investigated. When the content of Ga3+ increases above 0.1, multiferroic properties completely disappear. These results indicate that Ga3+ for Mn3+ substitution in DyMnO3 bulk can reduce the exchange interactions of JMn-Mn, JDy-Mn and the bond angle of Mn-O-Mn, while the electric polarization is observed to decrease rapidly, even for small Ga doping, and the anomaly at low T in P(T) associated with the Dy ordering is no longer observed for x = 0.05.

  9. Preparation and crystal structure characterization of CuNiGaSe3 ...

    Indian Academy of Sciences (India)

    Administrator

    Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes,. Mérida 5101, Venezuela. MS received 15 May 2009; revised 18 September 2009. Abstract. Samples of the quaternary chalcogenide compounds, CuNiGaSe3 and CuNiInSe3, prepared by direct fusion and ...

  10. Investigation of thermal, mechanical and magnetic behaviors of the Cu-11%Al alloy with Ag and Mn additions

    International Nuclear Information System (INIS)

    Silva, R.A.G.; Paganotti, A.; Gama, S.; Adorno, A.T.; Carvalho, T.M.; Santos, C.M.A.

    2013-01-01

    The investigation of thermal, mechanical and magnetic behaviors of the Cu-11%Al, Cu-11%Al-3%Ag, Cu-11%Al-10%Mn and Cu-11%Al-10%Mn-3%Ag alloys was made using microhardness measurements, differential scanning calorimetry, X-ray diffractometry, scanning electron microscopy, energy dispersion X-ray spectroscopy and magnetic moment change with applied field measurement. The results indicated that the Mn addition changes the phase stability range, the microhardness values and makes undetectable the eutectoid reaction in annealed Cu-11%Al and Cu-11%Al-3%Ag alloys while the presence of Ag does not modify the phase transformation sequence neither microhardness values of the annealed Cu-11%Al and Cu-11%Al-10%Mn alloys, but it increases the magnetic moment of this latter at about 2.7 times and decreases the rates of eutectoid and peritectoid reactions of the former. - Highlights: ► The microstructure of Cu-Al alloy is modified in the Ag presence. ► (α + γ) phase is stabilized down to room temperature when Ag is added to Cu-Al alloy. ► Ag-rich phase modifies the magnetic characteristics of Cu–Al–Mn alloy.

  11. Magnetic and magnetoelastic properties of M-substituted cobalt ferrites (M=Mn, Cr, Ga, Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Song, Sang-Hoon [Iowa State Univ., Ames, IA (United States)

    2007-12-15

    Magnetic and magnetoelastic properties of a series of M-substituted cobalt ferrites, CoMxFe2-xO4 (M=Mn, Cr, Ga; x=0.0 to 0.8) and Ge-substituted cobalt ferrites Co1+xGexFe2-2xO4 (x=0.0 to 0.6) have been investigated.

  12. Autonomous generator based on Ni-Mn-Ga microactuator as a frequency selective element

    Directory of Open Access Journals (Sweden)

    Barandiaran J.M.

    2013-01-01

    Full Text Available In this work, we suggest the temperature-induced resistivity change at the martensitic transformation in the Ni-Mn-Ga ferromagnetic shape memory alloy as a driving mechanism enabling periodic signal generation. We demonstrated its practical importance by a design of the prototype of a low-frequency autonomous generator. A prominent feature of this new generator is a control of its frequency by the external magnetic field.

  13. Magnetically induced martensite transition in freestanding epitaxial Ni-Mn-Ga films

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Thomas, M.; Niemann, R.; Schultz, L.; Fähler, S.

    2009-01-01

    Roč. 94, č. 15 (2009), 152513/1-152513/3 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z10100520 Keywords : epitaxial growth * Ni-Mn-Ga alloys * magnetic epitaxial layers * magnetic transitions * martensitic transformations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.554, year: 2009 http://link.aip.org/link/?APPLAB/94/152513/1

  14. Electric field control of thermal stability and magnetization switching in (Ga,Mn)As

    Science.gov (United States)

    Chiba, D.; Ono, T.; Matsukura, F.; Ohno, H.

    2013-09-01

    Magnetization switching induced by electric fields in the absence of external magnetic field has been demonstrated in a field effect structure with a (Ga,Mn)As layer having an in-plane magnetic anisotropy. The switching is related to the modulation of the in-plane magnetic anisotropy by electric fields. Reducing magnetic anisotropy energy height by electric fields, we observe stochastic magnetization switching.

  15. Effect of P-anion codoping on the Curie temperature of GaMnAs diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, R.; Máca, František; Kudrnovský, Josef; Bergqvist, L.

    2010-01-01

    Roč. 82, č. 3 (2010), 035207/1-035207/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/09/0775; GA ČR(CZ) GC202/07/J047 Institutional research plan: CEZ:AV0Z10100520 Keywords : GaMnAs * calculations * Curie temperature * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

  16. Study of the enhanced electromigration performance of Cu(Mn) by low-frequency noise measurements and atom probe tomography

    Science.gov (United States)

    Beyne, Sofie; Arnoldi, Laurent; De Wolf, Ingrid; Tőkei, Zsolt; Croes, Kristof

    2017-08-01

    The enhanced electromigration (EM) performance of 20 nm-wide Cu interconnects with a Mn-doped Cu seed and a Mn-based barrier is studied by means of low-frequency (LF) noise measurements and atom probe tomography (APT). While the EM activation energy of reference interconnects without Mn is 0.8 eV, standard EM tests revealed an activation energy of 1.0 eV for Cu(Mn) interconnects. The LF noise measurements confirm the activation energy of 1.0-1.1 eV in the Cu(Mn) interconnects, but also the activation energy of 0.8 eV is still visible, though less pronounced. Furthermore, the extent to which the mechanism at 0.8 eV is suppressed is strongly subjected to sample variations. These observations are confirmed by APT; Mn is found at the top surface and small clusters of Mn are present in the Cu bulk up to 5 nm away from the sidewalls. Mn segregation at the grain boundaries was not observed such that the hypothesis of Mn blocking grain boundary diffusion cannot be confirmed.

  17. Electronic structures and relevant physical properties of Ni2MnGa alloy films

    International Nuclear Information System (INIS)

    Kim, K. W.; Kim, J. B.; Huang, M. D.; Lee, N. N.; Lee, Y. P.; Kudryavtsev, Y. V.; Rhee, J. Y.

    2004-01-01

    The electronic structures and physical properties of the ordered and disordered Ni 2 MnGa alloy films were investigated in this study. Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K. It was also revealed that the film deposition onto substrates cooled by liquid nitrogen leads to the formation of a substantially-disordered or an amorphous phase which is not ferromagnetically ordered at room temperature. An annealing of such an amorphous film restores its crystallinity and also recovers the ferromagnetic order. It was also clarified how the structural disordering in the films influences the physical properties, including the loss of ferromagnetism in the disordered films, by performing electronic-structure calculations and a photoemission study.

  18. Influence of volume magnetostriction on the thermodynamic properties of Ni-Mn-Ga shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kosogor, Anna [National University of Science and Technology “MISiS,” Moscow 119049 (Russian Federation); Institute of Magnetism, 36-b, Vernadsky Str., Kyiv 03142 (Ukraine); Donetsk Institute for Physics and Engineering, Kyiv 03028 (Ukraine); L' vov, Victor A. [Institute of Magnetism, 36-b, Vernadsky Str., Kyiv 03142 (Ukraine); Faculty of Radiophysics, Electronics and Computer Systems, Taras Shevchenko University, Glushkov Str. 4G, Kyiv 01601 (Ukraine); Departament de Fisica, Universitat de les Illes Balears, Ctra. de Valldemossa, km 7.5, 07122 Palma de Mallorca (Spain); Cesari, Eduard [Departament de Fisica, Universitat de les Illes Balears, Ctra. de Valldemossa, km 7.5, 07122 Palma de Mallorca (Spain)

    2015-10-07

    In the present article, the thermodynamic properties of Ni-Mn-Ga ferromagnetic shape memory alloys exhibiting the martensitic transformations (MTs) above and below Curie temperature are compared. It is shown that when MT goes below Curie temperature, the elastic and thermal properties of alloy noticeably depend on magnetization value due to spontaneous volume magnetostriction. However, the separation of magnetic parts from the basic characteristics of MT is a difficult task, because the volume magnetostriction does not qualitatively change the transformational behaviour of alloy. This problem is solved for several Ni-Mn-Ga alloys by means of the quantitative theoretical analysis of experimental data obtained in the course of stress-strain tests. For each alloy, the entropy change and the transformation heat evolved in the course of MT are evaluated, first, from the results of stress-strain tests and, second, from differential scanning calorimetry data. For all alloys, a quantitative agreement between the values obtained in two different ways is observed. It is shown that the magnetic part of transformation heat exceeds the non-magnetic one for the Ni-Mn-Ga alloys undergoing MTs in ferromagnetic state, while the elevated values of transformation heat measured for the alloys undergoing MTs in paramagnetic state are caused by large MT strains.

  19. Effect of alloying Ni-Mn-Ga with Cobalt on thermal and structural properties

    Science.gov (United States)

    Rolfs, K.; Wimpory, R. C.; Petry, W.; Schneider, R.

    2010-11-01

    Materials showing a large magnetic field induced strain can potentially substitute giant magnetostrictive materials as well as piezoelectrical ceramics in actuating devices. However the magnetic shape memory alloys face several problems for an industrial application. Besides the well known brittleness the temperature-range is still limited due to the structural and magnetic phase transition around 75°C. By alloying one of the most common systems Ni-Mn-Ga with 4.8 at% and 6 at% Cobalt the Martensite temperature was increased up to 422K and the Curie temperature up to 432K. Neutron diffraction experiments were performed on these Ni-Mn-Ga-Co single crystalline samples at room temperature, which show the existence of two different non-modulated martensitic structures. Dependent on the composition, a tetragonal and an orthorhombic structure in single crystalline samples were verified. Furthermore intermartenstic phase transitions above room temperature were determined in several samples alloyed with 6 at% cobalt. A temperature dependent measurement of the structure of Ni44.6Mn29.1Ga20.1Co6.2 showed an orthorhombic phase from room temperature up to 379K changing to a tetragonal intermartensitic phase before reaching the austenitic phase above 389K.

  20. Synthetic, structural, spectroscopic and theoretical study of a Mn(III)-Cu(II) dimer containing a Jahn-Teller compressed Mn ion

    DEFF Research Database (Denmark)

    Berg, Nelly; Hooper, Thomas N.; Liu, Junjie

    2013-01-01

    The heterobimetallic complex [Cu(II)Mn(III)(L)(2)(py)(4)](ClO(4))·EtOH (1) built using the pro-ligand 2,2'-biphenol (LH(2)), contains a rare example of a Jahn-Teller compressed Mn(III) centre. Dc magnetic susceptibility measurements on 1 reveal a strong antiferromagnetic exchange between the Cu...... anisotropy also correlates well with experiment. A larger cluster anisotropy for the S = 3/2 state compared to the single-ion anisotropy of Mn(III) is rationalised on the basis of orbital mixing and various contributions that arise due to the spin-orbit interaction....

  1. One-pot synthesis of an Mn(III)–Cu(II)–Mn(III) trinuclear ...

    Indian Academy of Sciences (India)

    Keywords. One-pot synthesis; trinuclear heterometallic compound; crystal structure; dithiolene; non- .... elemental analysis, ESR, IR and electronic spectral studies. Compound 1 was finally characterized un- ambiguously by single crystal X-ray structural analysis. Table 1. .... sulphur involving interaction with Mn(III) cation).

  2. Gd3+-ESR and magnetic susceptibility of GdCu4Al8 and GdMn4Al8

    International Nuclear Information System (INIS)

    Coldea, R.; Coldea, M.; Pop, I.

    1994-01-01

    Gd ESR of GdCu 4 Al 8 and GdMn 4 Al 8 and magnetic susceptibility of GdCu 4 Al 8 , GdMn 4 Al 8 , and YMn 4 Al 8 were measured in the temperature range of 290K--460K and 90K--1050K, respectively. The occurrence of the Mn moment in YMn 4 Al 8 and GdMn 4 Al 8 is strongly correlated with the critical value of d∼2.6 angstrom of the Mn-Mn distance below which the Mn moment is not stable. The experimental data for GdMn 4 Al 8 , compared with the data for the isostructural compounds GdCu 4 Al 8 and YMn 4 Al 8 , show that near the critical value of d, the existence of Mn moment depends not only on the value of d, but also on the local magnetic surroundings. It has been revealed that the magnetic character of Mn moment in YMn 4 Al 8 and GdMn 4 Al 8 changes from an itinerant electron type to a local-moment type with increasing temperature

  3. Aging response of shape memory behavior in γ-MnCu alloys

    International Nuclear Information System (INIS)

    Tsuchiya, K.; Kawabata, O.; Umemoto, M.; Sato, H.; Marukawa, K.

    2000-01-01

    An effect of aging on shape memory behavior was investigated for Mn - 15 at % Cu alloy. It was revealed that aging of the alloy at 693 K significantly improves both shape memory effect (SME) and reversible shape memory effect (RSME). The reason of improved SME can be attributed to the decrease in the axial ratio, c/a, of fct martensite phase at room temperature. The enhancement of RSME might be related to the formation of Mn-rich zones associated with a higher antiferromagnetic ordering temperature. (orig.)

  4. Room-temperature antiferromagnetism in CuMnAs

    Czech Academy of Sciences Publication Activity Database

    Máca, František; Mašek, Jan; Stelmakhovych, O.; Martí, X.; Reichlová, Helena; Uhlířová, K.; Beran, Přemysl; Wadley, P.; Novák, Vít; Jungwirth, Tomáš

    2012-01-01

    Roč. 324, č. 8 (2012), s. 1606-1612 ISSN 0304-8853 R&D Projects: GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : antiferromagnetic semiconductors * spintronics * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.826, year: 2012

  5. Combined effect of structural softening and magneto-elastic coupling on elastic coefficients of Ni-Mn-Ga austenite

    Czech Academy of Sciences Publication Activity Database

    Seiner, Hanuš; Heczko, Oleg; Sedlák, Petr; Bodnárová, Lucie; Novotný, Michal; Kopeček, Jaromír; Landa, Michal

    2013-01-01

    Roč. 577, November 2013 (2013), S131-S135 ISSN 0925-8388 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GA101/09/0702; GA ČR(CZ) GAP107/11/0391; GA MŠk(CZ) 1M06031 Institutional research plan: CEZ:AV0Z20760514; CEZ:AV0Z10100520 Keywords : Ni2MnGa * elastic constants of Ni-Mn-Ga austenite * magnetic shape memory effect * martensitic transformation * elastic softening Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 2.726, year: 2013 http://www.sciencedirect.com/science/article/pii/S0925838812000539

  6. Phase-separated magnetic ground state in Mn3Ga0.45Sn0.55C

    Science.gov (United States)

    Dias, E. T.; Priolkar, K. R.; Nigam, A. K.; Singh, R.; Das, A.; Aquilanti, G.

    2017-04-01

    The existence of nonergodic ground states is considered as a precursor to a first-order long-range magnetostructural transformation. Mn3Ga0.45Sn0.55C lies compositionally between two compounds, Mn3GaC and Mn3SnC , undergoing first-order magnetic transformation. However, Mn3Ga0.45Sn0.55C , which crystallizes in a single-phase cubic structure, exhibits more than one long-range magnetic transition. Using a combination of magnetization, ac susceptibility, neutron diffraction, and x-ray-absorption fine-structure techniques, it is shown that, although Mn3Ga0.45Sn0.55C exhibits long-range magnetic order, it presents a cluster glassy ground state due to formation of magnetically ordered Ga-rich and Sn-rich clusters. The clusters are big enough to present signatures of long-range magnetic order but are distributed in a way that limits interactions between two clusters of the same type, leading to a frozen magnetic state at low temperatures. The main reason for such a cluster-glass state is the difference in the local structure of Mn atoms that find themselves in Ga-rich and Sn-rich clusters.

  7. Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Sathiabama Thiru

    2015-02-01

    Full Text Available In-situ reflection high-energy electron diffraction (RHEED observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001 using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

  8. Magnetic properties of manganese-site substituted Y(Cu,MnO3

    Directory of Open Access Journals (Sweden)

    Durán, P.

    2004-08-01

    Full Text Available The magnetic properties of the solid solution YCuxMn1-xO3 have been investigated in the whole range of possible substitutions 0.30 ≤ x(Cu ≤ 0.50. The χa.c. data showed the presence of minute amounts, undetectable by X-ray diffraction, of the antiferromagnetic Y2Cu2O5 phase, which did not interfere with the overall magnetic behavior of the solid solution. The total effective moment of the paramagnetic state decreases continuously with x(Cu. The average moment per Mn ion was estimated after subtraction of the copper contribution, giving approximately 4.4 μB, independent of the Cu concentration ; this value corresponds to the magnetic moment expected for 50 % Mn3+ and 50 % Mn4+. A paramagnetic-to-antiferromagnetic transition is observed at TNéel = 21 K, also compositional-independent. The low temperature state, studied by ZFC/FC cycles and M(H loops, reinforce the idea of antiferromagnetic interactions in these compounds. A very small ferromagnetic component giving rise to low coercive fields of the order of 800 Oe, was present for all Cu concentrations. Additional nuclear powder diffraction measurements show no specific magnetic structure, suggesting short range interactions.Se han investigado las propiedades magnéticas de la solución sólida YCuxMn1-xO3 para todo el rango de posibles sustituciones 0.30 ≤ x(Cu ≤ 0.50. Las medidas de susceptibilidad χa.c. señalan la presencia de ínfimas cantidades de la fase antiferromagnética Y2Cu2O5, la que no modifica las propiedades globales de la solucion sólida. El momento magnético total del estado paramagnético decrece monótonamente con x(Cu. El momento magnético promedio por ion Mn fue estimado después de sustraer la contribución del cobre, dando un valor aproximado de 4.4 μB, independiente de la concentración en cobre ; este valor corresponde al momento magnético esperado para 50 % Mn3+ y 50 % Mn4+. Una transición paramagnética hacia un estado antiferromagnético es observada

  9. Effect of Chemical Composition on Number of Eutectic Colonies in Ni-Mn-Cu Cast Iron

    Directory of Open Access Journals (Sweden)

    Janus A.

    2013-03-01

    Full Text Available Determined were direction and intensity of influence of alloying additions on the number of eutectic graphite colonies in austenitic cast iron Ni-Mn-Cu. Chemical composition of the cast iron was 1.7 to 3.3% C, 1.4 to 3.1% Si, 2.8 to 9.9% Ni, 0.4 to 7.7% Mn, 0 to 4.6% Cu, 0.14 to 0.16% P and 0.03 to 0.04% S. Analysed were structures of mottled (20 castings and grey (20 castings cast iron. Obtained were regression equations determining influence intensity of individual components on the number of graphite colonies per 1 cm2 (LK. It was found that, in spite of high total content of alloying elements in the examined cast iron, the element that mainly decides the LK value is carbon, like in a plain cast iron.

  10. Vsebnost Cu, Mn, Zn, Cd, Cr in Pb v različnih stopnjah pridelave vina

    OpenAIRE

    Slekovec, Metka; Veber, Marjan; Kristl, Janja

    2015-01-01

    In samples taken during different stages of winemaking process (from grapes, crushed grapes, pressed pomace, must deposit, deposit of lees, must before and after clarification and wine) the Cu, Mn and Zn contents were determined by flame atomic absorption spectrometry (FAAS) and the Cd, Pb and Cr contents were determined by electrothermal atomic absorption spectrometry (ETAAS). Grapes, crushed grapes, pressed pomace, must deposit and deposit of lees were microwave digested with nitric acid, h...

  11. Effect of excitation frequency on temperature dependent electroluminescence of ZnS : Cu, Mn : (H)

    International Nuclear Information System (INIS)

    Singh, L.K.

    1986-04-01

    The temperature dependent electroluminescence yields of Hydrogen coactivated (ZnS : Cu, Mn) Phosphor have been investigated under the influence of excitation field frequencies. It was observed that brightness maximum of electroluminescent intensity shifts towards higher temperature region for all emissions. The shift for blue emission is remarkable at some higher frequency. Electroluminescent output under simultaneous effect of frequency and temperature shows the validity of interrelation, f=A e(-c/KT). (author)

  12. Cathodoluminescence and Thermoluminescence of Undoped LTB and LTB:A (A = Cu, Ag, Mn)

    Science.gov (United States)

    2013-03-01

    during solid-phase synthesis, while CuO is used for copper doping and MnO2 was used for the manganese doped sample. A solid seed crystal was rotated...holes and strongly correlated electron semiconductor [7]. 11 Islam et al. from Germany attempted to theoretically calculate the band gap with...other hand, have a moderately low effective mass, making LTB a free electron semiconductor [15,7]. Electrons can still be trapped on positively

  13. Cu(In,Ga)Se{sub 2} mesa diodes for the study of edge recombination

    Energy Technology Data Exchange (ETDEWEB)

    Paire, Myriam, E-mail: myriam.paire@edf.fr [Institute of Research and Development on Photovoltaic Energy, 6 Quai Watier, 78401 Chatou (France); Jean, Cyril; Lombez, Laurent [Institute of Research and Development on Photovoltaic Energy, 6 Quai Watier, 78401 Chatou (France); Collin, Stéphane; Pelouard, Jean-Luc [Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Gérard, Isabelle [Institut Lavoisier de Versailles, UMR, 8180 Versailles (France); Guillemoles, Jean-François; Lincot, Daniel [Institute of Research and Development on Photovoltaic Energy, 6 Quai Watier, 78401 Chatou (France)

    2015-05-01

    The concentrating approach was applied on Cu(In,Ga)Se{sub 2} to develop photovoltaic devices with increased efficiency using less rare materials. To withstand the operating conditions, Cu(In,Ga)Se{sub 2} devices are miniaturized. Compared to previous generations of microcells, with only window layer structuration, microcells with a mesa design are fabricated. These microcells are created by etching ZnO, CdS and Cu(In,Ga)Se{sub 2} layers. The crucial issue addressed in this study is the electrical behavior of the device edges, to determine if microcells suffer from perimeter recombination. We analyze the influence of different etching techniques on the edge recombination signal. It is found that bromine etch result in well passivated surfaces, and devices as small as 50 × 50 μm do not experience edge recombination efficiency limitations. This behavior is remarkable compared to that of the microcells made of crystalline materials. For devices where the edges are deteriorated by a chemical post-treatment, a quasi-shunting signal coming from the edges is seen. We tested these microcells under concentrated illumination and important open-circuit voltage and efficiency gains are seen. - Highlights: • Cu(In,Ga)Se{sub 2} mesa diodes are fabricated by chemical etching. • Opto-electronic measurements show that mesa edges are passivated. • Open-circuit voltage over 950 mV is obtained at high concentration on Cu(In,Ga)Se{sub 2} micromesa diodes.

  14. Variability of Mn, Fe, Ni, Cu and Co in manganese nodules from the Central Indian Ocean Basin

    Digital Repository Service at National Institute of Oceanography (India)

    Jauhari, P.

    The trace element variations in manganese nodules from the Central Indian Basin have been related to the underlying sediment type. Percentages of Mn, Cu and Ni are high in nodules occurring in siliceous sediments compared with nodules from the red...

  15. The influence of implantation temperature on the magnetism and structure of Mn+ implanted p-GaN films

    International Nuclear Information System (INIS)

    Shi Ying; Zhang Yongxing; Jiang Changzhong; Fu Dejun; Fan Xiangjun

    2007-01-01

    Wurtzite p-type GaN epilayer, which has a thickness of 0.5 μm, is prepared by MOCVD on GaN buffer with sapphire substrate. Magnetic doping of the p-type GaN epilayer is achieved by 180 keV Mn + ions implantation. The GaN films are all implanted with dose of 5x10 15 cm -2 , while are kept at different temperatures during the implantation, i.e. room temperature, 300 and 500 o C, respectively. After an annealing step at 850 o C for 30 s in flowing N 2 , the magnetism of the Mn + -implanted p-GaN films is investigated by superconducting quantum interference device (SQUID). In the sample implanted at room temperature the magnetism is weak and no ferromagnetism is found. In the 300 o C implanted p-GaN film ferromagnetism is found with obvious hysteresis loop. Further increase in the implantation temperature to 500 o C brings about no increase in ferromagnetism. Combined with the structural characteristics of the Mn + -implanted p-GaN films studied by X-ray diffraction (XRD), one concludes that only suitable increase of the implantation temperature could be beneficial to the recovery of implantation defects and the generation of ferromagnetism in the Mn + -implanted p-GaN films

  16. In-situ neutron diffraction study of magnetic field induced reorientation in Ni-Mn-Ga under constant stress

    Czech Academy of Sciences Publication Activity Database

    Molnár, Peter; Šittner, Petr; Novák, Václav; Prokleška, J.; Sechovsky, V.; Ouladdiaf, B.; Hanulla, S.P.; Heczko, O.

    2008-01-01

    Roč. 20, č. 10 (2008), 104224/1-104224/7 ISSN 0953-8984 R&D Projects: GA AV ČR(CZ) IAA200100627 Institutional research plan: CEZ:AV0Z10100520 Keywords : shape memory alloys * NiMnGa * neutron diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.900, year: 2008

  17. TRACE METAL CONTENT (Cu, Zn, Mn AND Fe) IN URTICA DIOICA L. AND PLANTAGO MAJOR L.

    Science.gov (United States)

    Krolak, Elzbieta; Raczuk, Jolanta; Borkowska, Lidia

    2016-11-01

    The aim of the study was to compare the contents of Cu, Zn, Mn and Fe in the washed and unwashed leaves and roots of two plant species: Urica dioica L. and Plantago major L., used in herbal medicine. These two herb species occur in the same environmental habitats, yet their morphological structure is different. The soil and plant samples for analyses were collected from an uncontaminated area in Eastern Poland. In each habitat location, the samples were taken from sandy soils with slightly acidic and neutral pH values. The obtained results showed that U. dioica and P. major accumulated similar amounts of trace metals, such as: Cu, Zn and Fe, in leaves, despite the differences in the morphological structure of their overground parts. The content of Mn in leaves U. dioica was about twice as much as in P. major. Also, no differences in the metal content were observed between washed and unwashed leaves of both species. However, in the same habitat conditions, a significantly higher content of Cu, Zn and Mn was found in the roots of P. major than U. dioica. The content of Fe in the roots was similar in both species. P. major and U. dioica may be a valuable source of microelements, if they are obtained from unpolluted habitats.

  18. Effect of alloying elements on solidification of primary austenite in Ni-Mn-Cu cast iron

    Directory of Open Access Journals (Sweden)

    A. Janus

    2011-04-01

    Full Text Available Within the research, determined were direction and intensity of alloying elements influence on solidification way (directional orvolumetric of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu. 50 cast shafts dia. 20 mm were analysed.Chemical composition of the alloy was as follows: 1.7 to 3.3 % C, 1.4 to 3.1 % Si, 2.8 to 9.9 % Ni, 0.4 to 7.7 % Mn, 0 to 4.6 % Cu, 0.14 to0.16 % P and 0.03 to 0.04 % S. The discriminant analysis revealed that carbon influences solidification of primary austenite dendrites most intensively. It clearly increases the tendency to volumetric solidification. Influence of the other elements is much weaker. This means that the solidification way of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu does not differ from that in an unalloyed cast iron.

  19. A high performance quasi-solid-state supercapacitor based on CuMnO2 nanoparticles

    Science.gov (United States)

    Wang, Lu; Arif, Muhammad; Duan, Guorong; Chen, Shenming; Liu, Xiaoheng

    2017-07-01

    Mixed metal or transition metal oxides hold an unveiled potential as one of the most promising energy storage material because of their excellent stability, reliable conductivity, and convenient use. In this work, CuMnO2 nanoparticles are successfully prepared by a facile hydrothermal process with the help of dispersing agent cetyltrimethylammonium bromide (CTAB). CuMnO2 nanoparticles possess a uniform quadrilateral shape, small size (approximately 25 × 25 nm-35 × 35 nm), excellent dispersity, and large specific surface specific (56.9 m2 g-1) with an interparticle mesoporous structure. All these characteristics can bring benefit for their application in supercapacitor. A quasi-solid-state symmetric supercapacitor device is assembled by using CuMnO2 nanoparticles as both positive electrode and negative electrode. The device exhibits good supercapacitive performance with a high specific capacitance (272 F g-1), a maximum power density of 7.56 kW kg-1 and a superior cycling stability of 18,000 continuous cycles, indicating an excellent potential to be used in energy storage device.

  20. Effect of tellurium on machinability and mechanical property of CuAlMnZn shape memory alloy

    International Nuclear Information System (INIS)

    Liu Na; Li Zhou; Xu Genying; Feng Ze; Gong Shu; Zhu Lilong; Liang Shuquan

    2011-01-01

    Highlights: → A novel free-machining Cu-7.5Al-9.7Mn-3.4Zn-0.3Te (wt.%) shape memory alloy has been developed. → The size of dispersed particles with richer Te is 2-5 μm. → The CuAlMnZnTe alloy has good machinability which approached that of BZn15-24-1.5 due to the addition of Te. → Its shape memory property keeps the same as that of CuAlMnZn alloy with free Te. → The CuAlMnZn shape memory alloy with and without Te both have good ductile as annealed at 700 deg. C for 15 min. - Abstract: The microstructure transition, shape memory effect, machinability and mechanical property of the CuAlMnZn alloy with and without Te have been studied using X-ray diffraction analysis, chips observation and scanning electron microscopy (SEM), tensile strength test and differential scanning calorimeter (DSC), and semi-quantitative shape memory effect (SME) test. The particles with richer Te dispersedly distributed in grain interior and boundary with size of 2-5 μm. After the addition of Te, the CuAlMnZnTe alloy machinability has been effectively increased to approach that of BZn15-24-1.5 and its shape memory property remains the same as the one of CuAlMnZn alloy. The CuAlMnZn shape memory alloys with and without Te both have good ductility as annealed at 700 deg. C for 15 min.

  1. EFFECT OF Cu AND Mn TOXICITY ON CHLOROPHYLL FLUORESCENCE AND GAS EXCHANGE IN RICE AND SUNFLOWER UNDER DIFFERENT LIGHT INTENSITIES

    Directory of Open Access Journals (Sweden)

    Hajiboland R.

    2007-06-01

    Full Text Available Copper (Cu and manganese (Mn are essential micronutrients for plants, but toxic at high concentrations. Responses of rice (Oryza sativa L. and sunflower (Helianthus annuus L. to toxic concentrations of Mn and Cu (up to 100 μM were studied under three light intensities including low (LL, PPFD=100, intermediate (IL, PPFD=500 and high (HL, PPFD=800 light intensities in hydroponic medium. Rice plants showed higher susceptibility than sunflower to both heavy metals concerning dry matter of shoot and root. Growing under higher light intensity strengthened the effect of Cu toxicity while ameliorated that of Mn, the latter was attributed to the lower Mn accumulation of HL plants in both shoot and root. Chlorophyll content of leaves was influenced negatively only by Cu treatment and that at the highest concentration in the medium (100 μM. Similar with growth results, reduction of net assimilation rate (A was higher in HL than LL plants treated by excess Cu, but in contrast to growth response, reduction was more prominent in sunflower than rice. Excess Mn-induced reduction of A was similar between LL and HL plants and was greater in sunflower than rice. Reduction of A was partly attributable to stomatal limitation, but non-stomatal mechanisms were also involved in this reduction. Copper and Mn treatment did not change the optimal quantum efficiency of PSII in dark-adapted chloroplasts (Fv/Fm ratio, but Fv/F0 was influenced particularly by Cu treatment, the reduction was higher in rice than sunflower and in HL compared to LL plants. Regarding excess Cu and Mn-mediated alterations in chlorophyll concentration, Fv/F0 and Tm values, it was suggested that, Cu and Mn toxicity depress the leaf photosynthetic capacity primarily by causing a significant alteration of the composition and functional competence of the photosynthetic units rather a reduction in the number of photosynthetic units (PSUs per unit leaf area.

  2. Electronic structure and x-ray spectroscopy of Cu2MnAl1-xGax

    Science.gov (United States)

    Rai, D. P.; Ekuma, C. E.; Boochani, A.; Solaymani, S.; Thapa, R. K.

    2018-04-01

    We explore the electronic and related properties of Cu2MnAl1-xGax with a first-principles, relativistic multiscattering Green function approach. We discuss our results in relation to existing experimental data and show that the electron-core hole interaction is essential for the description of the optical spectra especially in describing the X-ray absorption and magnetic circular dichroism spectra at the L2,3 edges of Cu and Mn.

  3. Magnet properties of Mn70Ga30 prepared by cold rolling and magnetic field annealing

    International Nuclear Information System (INIS)

    Ener, Semih; Skokov, Konstantin P.; Karpenkov, Dmitriy Yu.; Kuz'min, Michael D.; Gutfleisch, Oliver

    2015-01-01

    The remanence and coercivity of arc melted Mn 70 Ga 30 can be substantially improved by cold rolling. For best performance the rolled material should be annealed at T=730 K in the presence of a magnetic field of 1 T. The so-obtained magnet has a remanence of 0.239 T and a coercivity of 1.24 T at room temperature. The underlying reason for the high coercivity and remanence is the increase of the content of a metastable ferrimagnetic D0 22 phase at the expense of the normally stable anti-ferromagnetic D0 19 . Magnetic field significantly increases the nucleation rate of the ferromagnetic D0 22 phase that leads to grain size refinement and as a consequence of improving remanence and coercive field. - Highlights: • Alternative synthesis method for D0 22 phase formation in Mn–Ga is developed. • Effect of cold rolling and annealing on magnetic properties of Mn 70 Ga 30 is examined. • Small magnetic fields are sufficient to accelerate nucleation of the D0 22 phase

  4. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    Science.gov (United States)

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the direction, which is theoretically predicted to produce a high Curie temperature.

  5. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

    2017-02-28

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  6. Anomalous lattice softening of Ni.sub.2./sub.MnGa austenite due to magnetoelastic coupling

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Seiner, Hanuš; Sedlák, Petr; Kopeček, Jaromír; Landa, Michal

    2012-01-01

    Roč. 111, č. 7 (2012), "07A929-1"-"07A929-3" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA101/09/0702; GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20760514 Keywords : Ni-Mn-Ga austenite * anomalous lattice softening * premartensitic transformation * magnetostriction * elastic constants of ferromagnetic austenite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.210, year: 2012

  7. Thermodynamic properties of Al-Mn, Al-Cu, and Al-Fe-Cu melts and their relations to liquid and quasicrystal structure

    International Nuclear Information System (INIS)

    Zaitsev, A I; Zaitseva, N E; Shimko, R Yu; Arutyunyan, N A; Dunaev, S F; Kraposhin, V S; Lam, Ha Thanh

    2008-01-01

    Thermodynamic properties of molten Al-Mn, Al-Cu and Al-Fe-Cu alloys in a wide temperature range of 1123-1878 K and the whole range of concentrations have been studied using the integral effusion method and Knudsen mass spectrometry. Thermodynamic functions of melts were described by the associated solution model. The possibility of icosahedral quasicrystal (i-QC) precipitation from liquid Al-Mn and Al-Cu-Fe alloys was found to be a consequence of the existence in liquid associates (clusters). A geometric model is suggested for the structure of associates in liquid

  8. Annealing influence on the atomic ordering and magnetic moment in a Ni-Mn-Ga alloy

    International Nuclear Information System (INIS)

    Gutierrez, J.; Lazpita, P.; Barandiaran, J.M.; Fdez-Gubieda, M.L.; Chaboy, J.; Kawamura, N.

    2007-01-01

    We have studied an alloy of composition Ni 51 Mn 28 Ga 21 prepared by rapid quenching in the form of a ribbon, with transformation temperature T M =337 K below the magnetic-order temperature, T C =344 K. Annealing of the samples was performed at 600 K for different times. From magnetic characterization a clear increase of the saturation magnetization accompanied with an increase of T C (up to 20 K) and T M (about 10 K) has been observed. XMCD measurements of both as-quenched and annealed samples have revealed great changes for the Mn and also the existence of a strong Ni signal. These results point out a possible non-negligible role of Ni, through the polarization of the conduction band, into driving the interplay between annealing and the magnetic properties in these materials

  9. Epitaxially grown MnAs /GaAs lateral spin valves

    Science.gov (United States)

    Saha, D.; Holub, M.; Bhattacharya, P.; Liao, Y. C.

    2006-10-01

    The authors report magnetoresistance of lateral spin valves fabricated from an epitaxially grown MnAs /GaAs heterostructure and utilizing a Schottky tunnel barrier for efficient spin injection. A coercive field difference between the two ferromagnetic MnAs contacts is obtained by a difference in aspect ratio. Peak magnetoresistances of 3.6% at 10K and 1.1% at 125K are measured for a 0.5μm channel length spin valve. The authors observe an exponential decay of the peak magnetoresistance with increasing channel length, which is indicative of diffusive spin transport. The magnetoresistance increases with increasing bias and with decreasing temperature. Control experiments have been carried out to confirm the spin-valve effect.

  10. Direct observation of magnetic domains by Kerr microscopy in a Ni-Mn-Ga magnetic shape-memory alloy

    Czech Academy of Sciences Publication Activity Database

    Perevertov, Oleksiy; Heczko, Oleg; Schaefer, R.

    2017-01-01

    Roč. 95, č. 14 (2017), s. 1-5, č. článku 144431. ISSN 2469-9950 R&D Projects: GA ČR GA15-00262S Institutional support: RVO:68378271 Keywords : shape memory * magnetic domains * Kerr microscopy * N-Mn-Ga alloy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  11. Magnetic domains and twin microstructure of single crystal Ni-Mn-Ga exhibiting magnetic shape memory effect

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Kopecký, Vít; Fekete, Ladislav; Jurek, Karel; Kopeček, Jaromír; Straka, L.; Seiner, Hanuš

    2015-01-01

    Roč. 51, č. 11 (2015), s. 7150406 ISSN 0018-9464 R&D Projects: GA ČR GB14-36566G; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic domain * magnetic shape memory * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

  12. Electronic configuration of the c(2 x 2)MnCu two-dimensional alloy in layered structures supported on Cu(100)

    International Nuclear Information System (INIS)

    Gallego, S; Munoz, M C; Huttel, Y; Avila, J; Asensio, M C

    2003-01-01

    The c(2 x 2)MnCu surface alloy on Cu(100) can be considered as a purely two-dimensional magnetic system where the Mn atoms exhibit a large corrugation closely related to their high spin moment. In this paper we investigate the influence of the atomic environment on the electronic and magnetic properties of the two-dimensional alloyed layer, extending our study to the less known multilayered system made of MnCu two-dimensional alloy layers embedded in a Cu crystal. The analysis is based on angle-resolved photoelectron spectroscopy measurements and calculations using the Green function matching method, which allows us to treat exactly the projection of the three-dimensional lattice on the c(2 x 2) plane. A complete study of the valence band is performed along the two-dimensional Brillouin zone in a wide energy range. We show that the presence of Mn results in an important redistribution of the spin-polarized electronic states of the neighbouring Cu atoms. This redistribution is not accompanied by a net charge transfer between different atoms, and also the spin moment of Cu remains small. Most of the new features induced by Mn in the surface alloy are also present in the multilayered system, evidencing that they are specific to the two-dimensional alloyed layer and not surface effects

  13. Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M.C.; Damsgaard, Christian Danvad; Farrer, I

    2005-01-01

    Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe...... the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of similar to 50% by point contact Andreev reflection conductivity measurements. (c) 2005 American Institute of Physics....

  14. Catalizadores de Mn-Cu y Mn-Co sintetizados a partir de hidrotalcitas y su empleo en la oxidación de COVs. / Mn-Cu and Mn-Co catalysts synthesized from hydrotalcites and their use in VOCs oxidation

    OpenAIRE

    Aguilera Bulla, Daniel Antonio

    2010-01-01

    Se obtuvieron óxidos mixtos del tipo Mn/Mg/Al, Cu/Mn/Mg/Al y Co/Mn/Mg/Al por descomposición térmica de hidrotalcitas, con el manganeso como fase activa mayoritaria y con variaciones en su contenido mediante la adición de Cu o Co (relación molar Cu/Mn o Co/Mn entre 0,05 y 0,5) para evaluar el efecto de una segunda fase activa en la oxidación total de tres compuestos orgánicos volátiles, COVs (tolueno, etanol y butanol). Los catalizadores fueron caracterizados mediante Fluorescencia de Rayos X ...

  15. Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

    KAUST Repository

    Barbe, Jeremy

    2016-12-13

    Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

  16. Synthesis, characterization and electrocatalytic properties of delafossite CuGaO2

    International Nuclear Information System (INIS)

    Ahmed, Jahangeer; Mao, Yuanbing

    2016-01-01

    Delafossite CuGaO 2 has been employed as photocatalysts for solar cells, but their electrocatalytic properties have not been extensively studied, especially no comparison among samples made by different synthesis routes. Herein, we first reported the successful synthesis of delafossite CuGaO 2 particles with three different morphologies, i.e. nanocrystalline hexagons, sub-micron sized plates and micron–sized particles by a modified hydrothermal method at 190 °C for 60 h [1–3], a sono-chemical method followed by firing at 850 °C for 48 h, and a solid state route at 1150 °C, respectively. Morphology, composition and phase purity of the synthesized samples was confirmed by powder X-ray diffraction and Raman spectroscopic studies, and then their electrocatalytic performance as active and cost effective electrode materials to the oxygen and hydrogen evolution reactions in 0.5 M KOH electrolyte versus Ag/AgCl was investigated and compared under the same conditions for the first time. The nanocrystalline CuGaO 2 hexagons show enhanced electrocatalytic activity than the counterpart sub-micron sized plates and micron-sized particles. - Graphical abstract: Representative delafossite CuGaO2 samples with sub-micron sized plate and nanocrystalline hexagon morphologies accompanying with chronoamperometric voltammograms for oxygen evolution reaction and hydrogen evolution reaction in 0.5 M KOH electrolyte after purged with N 2 gas. - Highlights: • Delafossite CuGaO 2 with three morphologies has been synthesized. • Phase purity of the synthesized samples was confirmed. • Comparison on their electrocatalytic properties was made for the first time. • Their use as electrodes for oxygen and hydrogen evolution reactions was evaluated. • Nanocrystalline CuGaO 2 hexagons show highest electrocatalytic activity.

  17. Structural, morphological, and magnetic characteristics of Cu-implanted nonpolar GaN films

    International Nuclear Information System (INIS)

    Sun Lili; Yan Fawang; Zhang Huixiao; Wang Junxi; Zeng Yiping; Wang Guohong; Li Jinmin

    2009-01-01

    Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane(112-bar 0) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 μ B /Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly.

  18. Influence of the Texture and Strain on the Behaviour of Ni53.6Mn27.1Ga19.3 and Ni54.2Mn29.4Ga16.4 Shape Memory Alloys

    Directory of Open Access Journals (Sweden)

    Alexandra Rudajevova

    2013-01-01

    Full Text Available Polycrystalline samples of Ni53.6Mn27.1Ga19.3 and Ni54.2Mn29.4Ga16.4 shape memory alloys were investigated using dilatometry. The longitudinal axes of the samples were perpendicular to the columnar grains. Both alloys showed positive shape memory effects. The martensitic phase transformation occurred without hysteresis in both alloys with transformation temperatures of 174°C for the Ni53.6Mn27.1Ga19.3 alloy and 253°C for the Ni54.2Mn29.4Ga16.4 alloy. The dilatation characteristics for both alloys were determined in three perpendicular directions. The strain associated with the internal stress at the interface between the two martensitic structures and the two grains affected the dilatation characteristics in the y and z directions (perpendicular to the longitudinal axis of the sample. The microstructure was determined for all the directions investigated. To investigate the mechanical history, a round cross-section of the Ni54.2Mn29.4Ga16.4 sample was machined using a milling machine along the longitudinal axis so that both sides of the sample were symmetrical. This sample treatment changed the dilatation characteristics of the martensite and austenite. The study and analysis of the dilatation characteristics of the thermal cycle showed the relaxation of internal stresses and the reorientation of the martensitic variants.

  19. Ni-Mn-Ga single crystals with very low twinning stress

    International Nuclear Information System (INIS)

    Straka, L; Haenninen, H; Soroka, A; Sozinov, A

    2011-01-01

    Twinning stress or mechanical hysteresis associated with the twin boundary motion is one of the most essential parameters which determine the actuating performance of magnetic shape memory alloys. Recent effort at AdaptaMat Ltd. to decrease the twinning stress resulted in a consistent production of Ni-Mn-Ga magnetic shape memory single crystals with the twinning stress of about 0.1 MPa, which is much lower than previously reported. In this work, the mechanical and magnetomechanical response of the developed crystals is discussed in detail and the importance of adjustment of the twin microstructure for obtaining an optimal actuating behavior is illustrated.

  20. Excitation dependent multicolor emission and photoconductivity of Mn, Cu doped In2S3 monodisperse quantum dots

    Science.gov (United States)

    Ghosh, Sirshendu; Saha, Manas; Ashok, Vishal Dev; Chatterjee, Arijit; De, S. K.

    2016-04-01

    Indium sulphide (In2S3) quantum dots (QDs) of average size 6 ± 2 nm and hexagonal nanoplatelets of average size 37 ± 4 nm have been synthesized from indium myristate and indium diethyl dithiocarbamate precursors respectively. The absorbance and emission band was tuned with variation of nanocrytal size from very small in the strong confinement regime to very large in the weak confinement regime. The blue emission and its shifting with size has been explained with the donor-acceptor recombination process. The 3d element doping (Mn2+ and Cu2+) is found to be effective for formation of new emission bands at higher wavelengths. The characteristic peaks of Mn2+ and Cu2+ and the modification of In3+ peaks in the x-ray photoelectric spectrum (XPS) confirm the incorporation of Mn2+ and Cu2+ into the In2S3 matrix. The simulation of the electron paramagnetic resonance signal indicates the coexistence of isotropic and axial symmetry for In and S vacancies. Moreover, the majority of Mn2+ ions and sulphur vacancies (VS ) reside on the surface of nanocrystals. The quantum confinement effect leads to an enhancement of band gap up to 3.65 eV in QDs. The formation of Mn 3d levels between conduction band edge and shallow donor states is evidenced from a systematic variation of emission spectra with the excitation wavelength. In2S3 QDs have been established as efficient sensitizers to Mn and Cu emission centers. Fast and slow components of photoluminescence (PL) decay dynamics in Mn and Cu doped QDs are interpreted in terms of surface and bulk recombination processes. Fast and stable photodetctors with high photocurrent gain are fabricated with Mn and Cu doped QDs and are found to be faster than pure In2S3. The fastest response time in Cu doped QDs is an indication of the most suitable system for photodetector devices.

  1. Reduced interface spin polarization by antiferromagnetically coupled Mn segregated to the C o2MnSi /GaAs (001) interface

    Science.gov (United States)

    Rath, Ashutosh; Sivakumar, Chockalingam; Sun, C.; Patel, Sahil J.; Jeong, Jong Seok; Feng, J.; Stecklein, G.; Crowell, Paul A.; Palmstrøm, Chris J.; Butler, William H.; Voyles, Paul M.

    2018-01-01

    We have investigated the interfacial structure and its correlation with the calculated spin polarization in C o2MnSi /GaAs(001) lateral spin valves. C o2MnSi (CMS) films were grown on As-terminated c(4 ×4 ) GaAs(100) by molecular beam epitaxy using different first atomic layers: MnSi, Co, and Mn. Atomically resolved Z -contrast scanning transmission electron microscopy (STEM) imaging and electron energy loss spectroscopy (EELS) were used to develop atomic structural models of the CMS/GaAs interfaces that were used as inputs for first-principles calculations to understand the magnetic and electronic properties of the interface. First-principles structures were relaxed and then validated by comparing experimental and simulated high-resolution STEM images. STEM-EELS results show that all three films have similar six atomic layer thick, Mn- and As-rich multilayer interfaces. However, the Co-initiated interface contains a M n2As -like layer, which is antiferromagnetic, and which is not present in the other two interfaces. Density functional theory calculations show a higher degree of interface spin polarization in the Mn- and MnSi-initiated cases, compared to the Co-initiated case, although none of the interfaces are half-metallic. The loss of half-metallicity is attributed, at least in part, to the segregation of Mn at the interface, which leads to the formation of interface states. The implications for the performance of lateral spin valves based on these interfaces are discussed briefly.

  2. The evaluation of Cu, Zn, Mn, and Se concentrations in the hair of South American camelids

    Directory of Open Access Journals (Sweden)

    Milada Holasová

    2017-01-01

    Full Text Available The aim of this study was to monitor the content of trace elements in the hair of South American camelids and to evaluate the effect of coat colour, species, age, and sex on their concentration in the hair. The samples were collected from 77 animals – 23 llamas (Llama guanicoe f. gllama and 54 alpacas (Llama guanicoe f. pacos during a spring health check. The concentrations of copper (Cu, zinc (Zn, and manganese (Mn were determined by Flame Atomic Absorption Spectrometry and selenium (Se by Hydride Generation Atomic Absorption Spectrometry. We found the following concentrations (mean ± standard deviation; mg/kg dry matter in the llama hair: Cu 9.70 ± 4.69; Zn 145.20 ± 21.07; Mn 12.49 ± 10.14; Se 0.25 ± 0.14. In alpaca hair we found the following concentrations: Cu 10.22 ± 2.90; Zn 129.81 ± 19.01; Mn 12.67 ± 13.85; Se 0.48 ± 0.24. We found a significant difference between llamas and alpacas in Zn and Se concentrations in the hair. From all the evaluated factors we found that coat colour had the highest effect on Mn and Se concentration. Dark haired animals had significantly higher concentrations of these trace elements than other coloured groups. The evaluation of the concentration of trace elements in the hair of llamas has a potential to be used for the evaluation of long-term status of trace elements in the body; however, it is necessary to continue with experimental work in this area. Our findings can serve as a pilot study for further works in this field.

  3. Positron Annihilation Spectroscopy and Small Angle Neutron Scattering Characterization of Nanostructural Features in Irradiated Fe-Cu-Mn Alloys

    International Nuclear Information System (INIS)

    Wirth, B D; Asoka-Kumar, P; Howell, R H; Odette, G R; Sterne, P A

    2001-01-01

    Radiation embrittlement of nuclear reactor pressure vessel steels results from a high number density of nanometer sized Cu-Mn-Ni rich precipitates (CRPs) and sub-nanometer matrix features, thought to be vacancy-solute cluster complexes (VSC). However, questions exist regarding both the composition of the precipitates and the defect character and composition of the matrix features. We present results of positron annihilation spectroscopy (PAS) and small angle neutron scattering (SANS) characterization of irradiated and thermally aged Fe-Cu and Fe-Cu-Mn alloys. These complementary techniques provide insight into the composition and character of both types of nanoscale features. The SANS measurements indicate populations of CRPs and VSCs in both alloys. The CRPs are coarser in the Fe-Cu alloy and the number densities of CRP and VSC increase with the addition of Mn. The PAS involved measuring both the positron lifetimes and the Doppler broadened annihilation spectra in the high momentum region to provide elemental sensitivity at the annihilation site. The spectra in Fe-Cu-Mn specimens thermally aged to peak hardness at 450 C and irradiated at 288 C are nearly identical to elemental Cu. Positron lifetime and spectrum measurements in Fe-Cu specimens irradiated at 288 C clearly show the existence of long lifetime (∼500 ps) open volume defects, which also contain Cu. Thus the SANS and PAS provide a self-consistent picture of nanostructures composed of CRPs and VSCs and tend to discount high Fe concentrations in the CRPs

  4. β-Detected NMR Search for Magnetic Phase Separation in Epitaxial GaAs:Mn

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Miller, R. I.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Morris, G. D.; Kreitzman, S. R.; Levy, C. D. P.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Yu, K. M.; Liu, X.; Furdyna, J. K.; MacFarlane, W. A.

    To test for the microscopic magnetic phase separation in the dilute magnetic semiconductor Ga1-xMnxAs sug-gested by low energy muon spin rotation measurements[1], we present a detailed analysis of the amplitudes of the 8Li β-detected nuclear magnetic resonance in an epitaxially grown thin film of x = 5.4% Mn doped GaAs on a semi-insulating GaAs substrate with magnetic transition temperature TC =72 K. The spectrum at 100 K corresponds to 73% of the full room temperature amplitude, and at 60 K to about 62%. The 11% loss of signal through the magnetic tran-sition is much smaller than that ∼ 50% found by low energy μSR[1], and may be entirely due to an amplitude change intrinsic to GaAs. This lack of evidence for phase separation is, however, consistent with the full volume fraction magnetism found by a second low energy μSR measurement on a different sample using weak transverse field[2].

  5. CuMnOS Nanoflowers with Different Cu+/Cu2+ Ratios for the CO2-to-CH3OH and the CH3OH-to-H2 Redox Reactions

    Science.gov (United States)

    Chen, Xiaoyun; Abdullah, Hairus; Kuo, Dong-Hau

    2017-01-01

    A conservative CO2-Methanol (CH3OH) regeneration cycle, to capture and reutilize the greenhouse gas of CO2 by aqueous hydrogenation for industry-useful CH3OH and to convert aqueous CH3OH solution by dehydrogenation for the clean energy of hydrogen (H2), is demonstrated at normal temperature and pressure (NTP) with two kinds of CuMnOS nanoflower catalysts. The [Cu+]-high CuMnOS led to a CH3OH yield of 21.1 mmol·g-1catal.·h-1 in the CuMnOS-CO2-H2O system and the other [Cu+]-low one had a H2 yield of 7.65 mmol·g-1catal.·h-1 in the CuMnOS-CH3OH-H2O system. The successful redox reactions at NTP rely on active lattice oxygen of CuMnOS catalysts and its charge (hole or electron) transfer ability between Cu+ and Cu2+. The CO2-hydrogenated CH3OH in aqueous solution is not only a fuel but also an ideal liquid hydrogen storage system for transportation application.

  6. Structural and mechanical properties of NiMnGa shape memory ferromagnets

    Energy Technology Data Exchange (ETDEWEB)

    Gaitzsch, Uwe; Roth, Stefan; Rellinghaus, Bernd; Schultz, Ludwig [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Boehm, Andrea [Fraunhofer IWU, Noethnitzer Str. 44, D-01187 Dresden (Germany)

    2007-07-01

    Magnetic shape memory alloys are of significant research interest owing to their capability to deform quasi-plastically by some percent via twin boundary motion under the influence of a magnetic field. These materials are supposed to react faster than conventional shape memory materials because neither heating nor cooling are involved. We present the structural and mechanical properties of polycrystalline, textured Ni{sub 50}Mn{sub 30}Ga{sub 20} and Ni{sub 50}Mn{sub 29}Ga{sub 21}. Upon cooling, these alloys undergo austenite-martensite transitions at 100 C and 55 C, respectively. The evolving martensitic structure is either orthorhombic or tetragonal and depends on the thermomechanical history of the samples and their composition. Since only two of the three possible martensitic structures are capable of providing the mandatory highly mobile twin boundaries, it is essential to understand and control the phase formation process by appropriate thermal and mechanical treatment. Once the sample is given a suitable structure, samples for magnetomechanical testing are hot mold cast for directional solidification and investigated in magnetic fields of up to 0.8 T in compression tests.

  7. Preparation and characterization of textured Ni-Mn-Ga to show MFIS

    Energy Technology Data Exchange (ETDEWEB)

    Poetschke, Martin; Huerrich, Claudia; Roth, Stefan; Rellinghaus, Bernd; Schultz, Ludwig [IFW Dresden (Germany)

    2010-07-01

    Ni-Mn-Ga alloys are interesting because of their possible application as magnetic shape memory materials. This effect is caused by the motion of twin boundaries in a magnetic field. Up to now most of the research was concentrated on single crystals. However, the preparation of single crystals is a time consuming and cost intensive process and compositional changes along the growth axis as well as segregations may occur. This is why for technical applications there is a great interest in polycrystals, which are easier to produce. To achieve magnetic field induced twin boundary motion in polycrystals, directional solidification was applied to a 5M Ni-Mn-Ga alloy in order to prepare coarse grained, textured samples. Stationary casting in a pre-heated ceramic mold mounted on a copper plate was employed to generate a heat flow towards the bottom of the sample and thereby a directional solidification in the opposite direction. The preferred solidification-induced growth direction was determined by EBSD. Annealing is necessary for homogenization and stress relaxation. The martensitic transformation temperature which strongly depends on the composition was monitored by DSC, and it is shown that the chemical homogeneity along the sample axis is improved in likewise treated samples. After a mechanical training process MFIS was observed.

  8. Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

    Energy Technology Data Exchange (ETDEWEB)

    Schleicher, B., E-mail: b.schleicher@ifw-dresden.de; Niemann, R.; Schultz, L.; Fähler, S. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); TU Dresden, Institute for Solid State Physics, D-01062 Dresden (Germany); Diestel, A.; Hühne, R. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2015-08-07

    Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

  9. Structural and magnetic characterization of martensitic Ni-Mn-Ga thin films deposited on Mo foil

    International Nuclear Information System (INIS)

    Chernenko, V.A.; Anton, R. Lopez; Kohl, M.; Barandiaran, J.M.; Ohtsuka, M.; Orue, I.; Besseghini, S.

    2006-01-01

    Three martensitic Ni 51.4 Mn 28.3 Ga 20.3 thin films sputter-deposited on a Mo foil were investigated with regard to their crystal and magnetic domain structures, as well as their magnetic and magnetostrain properties. The film thicknesses, d, were 0.1, 0.4 and 1.0μm. X-ray and electron diffraction patterns revealed a tetragonal modulated martensitic phase (10M) in the films. The surface topography and micromagnetic structure were studied by scanning probe microscopy. A maze magnetic domain structure featuring a large out-of-plane magnetization component was found in all films. The domain width, δ, depends on the film thickness as δ∼d. The thickness dependencies of the saturation magnetization, saturation magnetic field and magnetic anisotropy were clarified. Beam cantilever tests on the Ni-Mn-Ga/Mo composite as a function of magnetic field showed reversible strains, which are larger than ordinary magnetostriction

  10. Optics of the CuGaSe{sub 2} solar cell for highly efficient tandem concepts; Optik der CuGaSe{sub 2}-Solarzelle fuer hocheffiziente Tandemkonzepte

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martina

    2010-01-25

    A principle aim of solar cell research lies in optimizing the exploitation of the incident solar light. Yet, for single junction solar cells there exists an efficiency limit as described by Shockley and Queisser. The only concept realized so far to overcome this threshold is - apart from concentration - the multijunction solar cell. However, any kind of multijunction design poses new challenges: The upper wide-gap solar cell (top cell) needs to show efficient light absorption in the short-wavelength region. At the same time sufficient transmission for long-wavelength light is required which then needs to be absorbed effectively by the low-gap bottom cell. In tandem solar cells a proper light management in top and bottom solar cell is of great importance. This work focuses on chalcopyrite-based tandem solar cells. For the wide-bandgap IR-transparent ZnO:Al/i-ZnO/CdS/CuGaSe{sub 2}/SnO{sub 2}:F/glass solar cell an optical model has been established. Starting from modeling each of the individual layers building the stack the optical behavior of the complete thin film system of the top cell could be described. Carefully selected layer combinations and comparison of experimental and calculated data allowed for the attribution of transmission losses to the distinct material properties. Defects in the absorber are of crucial importance but also free carrier absorption in the window and in the transparent back contact contribute significantly to optical losses. The quantification of the losses was achieved by calculating the effects of reduced top cell transmission on the photo current of a simplified bottom cell. An extension of the optical model allowed to calculate the effective absorption in the individual layers and to determine reflection losses at the interfaces. From these results an optimized top cell stack was derived which is characterized by A) simulation of the monolithic integration, B) reduced layer thicknesses wherever possible from the electrical point of

  11. Structural and magnetic study of nanostructured (Fe79Mn21)80Cu20 alloy synthesized by ball milling

    International Nuclear Information System (INIS)

    Mizrahi, M.; Cabrera, A.F.; Stewart, S.J.; Troiani, H.E.; Cotes, S.M.; Desimoni, J.

    2004-01-01

    We have obtained by high-energy ball milling of the powder elements, a nanostructured (Fe 79 Mn 21 ) 80 Cu 20 FCC with a grain size distribution of an average crystallite size of 8 nm. Moessbauer spectroscopy, AC-susceptibility and magnetization measurement results indicate that the FCC alloy displays two magnetic behaviors; a paramagnetic component that orders along over a wide temperature range below 220 K, and a minor antiferromagnetic fraction that is still ordered at room temperature. The average hyperfine field (B hf =5.2 T) and the isomer shift (δ=0.07 mm/s) values at T=23 K show that Fe atoms are in a FCC structure that includes Mn and Cu atoms. In addition, we verified that presence of Cu stabilizes the FCC-Fe(Mn,Cu) phase

  12. The Concentration of Zn, Fe, Mn, Cu and Se in Fiber Fractions of Legumes in Indonesia

    Directory of Open Access Journals (Sweden)

    Evitayani

    2010-05-01

    Full Text Available This study was carried out to evaluate concentration of micro minerals (Zn, Fe, Mn, Cu and Se of forages and their distribution in fiber fraction (neutral detergent fiber/NDF and acid detergent fiber/ADF in West Sumatra during dry and rainy seasons. Four species of common legume namely Leucaena leucocephala, Centrocema pubescens, Calopogonium mucunoides and Acacia mangium were collected at native pasture during rainy and dry seasons. The results showed that micro minerals concentration of forages and their distribution in fiber fraction varied among species and season. In general, concentration of micro minerals was slightly higher in rainy season compared to dry season either in legumes forages. Data on legume forages showed that 75% of legumes were deficient in Zn and Mn, 62.5 % deficient in Cu and 50 % deficient in Se. There was no species of legume deficient in Fe. Distribution of micro minerals in NDF and ADF were also significantly affected by species and season and depends on the kinds of element measured. Generally, micro minerals were associated in fiber fractions and it yield much higher during dry season compared to rainy season. Iron (Fe and selenium (Se in forages were the highest elements associated in NDF and ADF, while the lowest was found in Copper (Cu. (Animal Production 12(2: 105-110 (2010Keywords: Seasons, forages, micro mineral distribution, fiber fraction

  13. Ag2CuMnO4: A new silver copper oxide with delafossite structure

    International Nuclear Information System (INIS)

    Munoz-Rojas, David; Subias, Gloria; Oro-Sole, Judith; Fraxedas, Jordi; Martinez, Benjamin; Casas-Cabanas, Montse; Canales-Vazquez, Jesus; Gonzalez-Calbet, Jose; Garcia-Gonzalez, Ester; Walton, Richard I.; Casan-Pastor, Nieves

    2006-01-01

    The use of hydrothermal methods has allowed the synthesis of a new silver copper mixed oxide, Ag 2 CuMnO 4 , the first example of a quaternary oxide containing both elements. It crystallizes with the delafossite 3R structure, thus being the first delafossite to contain both Ag and Cu. Synthesis conditions affect the final particle size (30-500nm). Powder X-ray diffraction Rietveld refinement indicates a trigonal structure (R3-bar m) and cell parameters a=2.99991A and c=18.428A, where Cu and Mn are disordered within the octahedral B positions in the plane and linearly coordinated Ag occupies de A position between layers. X-ray absorption near edge spectroscopy (XANES) for copper and manganese, and XPS for silver evidence +2, +4, and +1 oxidation states. The microstructure consists of layered particles that may form large twins showing 5nm nanodomains. Finally, magnetic measurements reveal the existence of ferromagnetic coupling yielding in-plane moments that align antiferromagnetically at lower temperatures. The singularity of the new phase resides on the fact that is an example of a bidimensional arrangement of silver and copper in an oxide that also shows clear bidimensionality in its physical properties. That is of special relevance to the field of high T c superconducting oxides, while the ferromagnetic coupling in a bidimensional system deserves itself special attention

  14. Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

    Science.gov (United States)

    Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

    2018-03-01

    In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

  15. Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

    Directory of Open Access Journals (Sweden)

    Hailong eWang

    2016-03-01

    Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  16. Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

    Science.gov (United States)

    Wen Chang, Hsiao; Akita, Shingo; Matsukura, Fumihiro; Ohno, Hideo

    2013-09-01

    We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature TC and p, which shows γ of 1.3-1.6 in TC ∝ pγ. The exponent γ is several times larger than γ ˜ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator.

  17. Lattice transitions and flickering images in aged Cu-Mn alloys

    International Nuclear Information System (INIS)

    Perkins, J.; Adachi, K.

    1995-01-01

    Distinctive ''flickering'' movements are observed in TEM images of the microstructure of Cu-Mn alloys after aging within the miscibility gap. Analyses of two-beam image extinction and electron diffraction streaks indicate that the underlying tweed and ''V-shaped'' images involve a static displacement field of the type {110} left angle 1 anti 10 right angle. Atomic force microscopy and other microanalyses show the presence of Mn-enriched colonies of 15-40 nm, formed throughout the microstructure, in which twinned fct crystallites are induced and confined. The flickering movements are interpreted as a direct manifestation of the fcc=>fct transformation event and in particular of a rotation of the fct c-axis, these effects being caused by an inelastic interaction between left angle 110 right angle left angle 1 anti 10 right angle phonons and the accelerated electrons of the incident TEM beam. (orig.)

  18. Effect of Fertilizers and Irrigation on Distribution of Mobile Forms of Mn, Zn and Cu in Typical Chernozems of the Republic of Moldova

    Directory of Open Access Journals (Sweden)

    Leah T. Gh.

    2013-04-01

    Full Text Available The paper presents the study results of mobile forms of Mn, Zn and Cu in irrigated fertilized and unfertilized chernozems typical. Irrigation affects the content and distribution of mobile forms of trace elements, increasing their removal beyond the 150 cm of soil layer. The fertilization increase the migration of Cu until 130 cm, fixed Mn and Zn in 0-60 cm of the irrigated soils. During irrigation constitutes a danger of soil contamination with Mn, Cu and Zn.

  19. Structural and optical properties of (Ag,Cu)(In,Ga)Se2 polycrystalline thin film alloys

    International Nuclear Information System (INIS)

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-01-01

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se 2 polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a o lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c o lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  20. Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

    2013-10-14

    L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

  1. Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

    Science.gov (United States)

    Tsay, Chien-Yie; Chen, Ching-Lien

    2017-06-01

    In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

  2. First-principles calculations of the electronic, vibrational, and elastic properties of the magnetic laminate Mn2GaC

    International Nuclear Information System (INIS)

    Thore, A.; Dahlqvist, M.; Alling, B.; Rosén, J.

    2014-01-01

    In this paper, we report the by first-principles predicted properties of the recently discovered magnetic MAX phase Mn 2 GaC. The electronic band structure and vibrational dispersion relation, as well as the electronic and vibrational density of states, have been calculated. The band structure close to the Fermi level indicates anisotropy with respect to electrical conductivity, while the distribution of the electronic and vibrational states for both Mn and Ga depend on the chosen relative orientation of the Mn spins across the Ga sheets in the Mn–Ga–Mn trilayers. In addition, the elastic properties have been calculated, and from the five elastic constants, the Voigt bulk modulus is determined to be 157 GPa, the Voigt shear modulus 93 GPa, and the Young's modulus 233 GPa. Furthermore, Mn 2 GaC is found relatively elastically isotropic, with a compression anisotropy factor of 0.97, and shear anisotropy factors of 0.9 and 1, respectively. The Poisson's ratio is 0.25. Evaluated elastic properties are compared to theoretical and experimental results for M 2 AC phases where M = Ti, V, Cr, Zr, Nb, Ta, and A = Al, S, Ge, In, Sn.

  3. Pressure-induced electrical and magnetic property changes in CaCuMn6O12

    International Nuclear Information System (INIS)

    Zhang, W.; Yao, L.D.; Yang, L.X.; Li, F.Y.; Liu, Z.X.; Jin, C.Q.; Yu, R.C.

    2006-01-01

    CaCuMn 6 O 12 was prepared by using a traditional solid-state reaction method. It is a highly correlated electron system with a small gap appearing at E F and cluster glass state at low temperature, whereas temperature dependence of resistivity suggests that it is related to thermally activated nearest-neighbor hopping in paramagnetism state in higher temperature range. The resistivity decreases with increasing pressure until 11 kbar, and then increases with further increasing pressure. The blocking temperature T b goes down under pressure, indicating the suppression of cluster glass state under pressure

  4. Measurement of capture resonance integrals (Mn, Fe, Co, Ni, Cu, Zr, Mo)

    International Nuclear Information System (INIS)

    Vidal, R.; Cardoso-Martinho, E.

    1965-01-01

    The measurements are carried out with the oscillation technique, without a cadmium tube, in a spectrum rich in epithermal neutrons. The samples consist in metal plates or deposits on aluminium. The values of the resonance integrals, not including the l/v part and corresponding to zero thickness, are the following: Mn: 10.5 ± 1 b; Fe: 1.1 ± 0,3 b; Co: 50.5 ± 4 b; Ni: 1.0 ± 0.4 b; Cu: 2.2 ± 0.3 b; Zr: 1,06 ± 0.14 b; Mo : 22. 7 ± 1 b. (authors) [fr

  5. Oximato bridged Rh M and Rh M species (M = Mn, Co, Ni; M = Cu, Ag)

    Indian Academy of Sciences (India)

    WINTEC

    The reaction of [RhCl2(HPhL)(PhL)] with MII(ClO4)2⋅6H2O in presence of alkali has fur- nished trinuclear [RhCl2(PhL)2]2M(H2O)2⋅H2O ... 6H2O in 2 : 1 molar ratio in presence of alkali . De- tails of a representative case (M = Mn) are given .... (PPh3)2NO3 in presence of base. Details of a rep- resentative case (M = Cu) are ...

  6. Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

    International Nuclear Information System (INIS)

    Sun Lili; Yan Fawang; Zhang Huixiao; Wang Junxi; Wang Guohong; Zeng Yiping; Li Jinmin

    2009-01-01

    Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into nonpolar a-plane (112-bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID.

  7. Evidence for superparamagnetism in ultrathin Fe and FexMn1-x films on Cu(100)

    International Nuclear Information System (INIS)

    Bhagwat, S.; Thamankar, R.; Schumann, F.O.

    2005-01-01

    We re-examine the onset of ferromagnetism of Fe/Cu(100) grown at 300K. We find evidence of superparamagnetism in the thickness interval ∼ 1.5-1.8ML since in this regime a description via Ising superparamagnetism works well. The results on Fe/Cu(100) are being used for a further analysis on our recent data on FCC Fe x Mn 1-x films with x ∼ 60%. We observed in this concentration regime non-zero M-H loops yet no hysteresis. We made the additional observation of significant Fe surface segregation. With this in mind, we analyzed these loops in the same fashion and found again a superparamagnetic behavior

  8. Magnetic properties of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yao, Jinlei [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009 (China); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

    2015-12-15

    Magnetic properties and magnetocaloric effect of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds have been investigated. Magnetic measurements of RNi{sub 3}TSi display the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Graphical abstract: Magnetic measurements of RNi{sub 3}TSi show the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of 'RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi'. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Highlights: • CaCu{sub 5}-type RNi{sub 3}TSi show ferromagnetic ordering (R=Gd, Tb, T=Mn–Co, Cu). • Curie point increases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • MCE decreases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. • The coercive field of TbNi{sub 3}MnSi and TbNi{sub 3}FeSi reach 13 kOe and 16 kOe at 5 K.

  9. Synthesis and luminescence properties of ZnS and metal (Mn, Cu)-doped-ZnS ceramic powder

    Science.gov (United States)

    Ummartyotin, S.; Bunnak, N.; Juntaro, J.; Sain, M.; Manuspiya, H.

    2012-03-01

    ZnS and metal (Mn, Cu)-doped-ZnS were successfully prepared by wet chemical synthetic route. The understanding of substituted metal ions (Mn, Cu) into ZnS leads to transfer the luminescent centre by small amount of metal dopant (Mn, Cu). Fourier transform infrared and X-ray diffraction were used to determine chemical bonding and crystal structure, respectively. It showed that small amount of metal (Mn, Cu) can be completely substituted into ZnS lattice. X-ray fluorescence was used to confirm the existence of metal-doped ZnS. Scanning electron microscope revealed that their particles exhibits blocky particle with irregular sharp. Laser confocal microscope and photoluminescence spectroscopy showed that ZnS and metal-doped-ZnS exhibited intense, stable, and tunable emission covering the blue to red end of the visible spectrum. ZnS, Mn-doped-ZnS and Cu-doped-ZnS generated blue, yellow and green color, respectively.

  10. Electronic structure, defect formation energy, and photovoltaic properties of wurtzite-derived CuGaO2

    Science.gov (United States)

    Okumura, H.; Sato, K.; Kakeshita, T.

    2018-04-01

    Wurtzite-derived CuGaO2 (β-CuGaO2) is a recently synthesized oxide and expected as a candidate material for photovoltaic solar cells. In this paper, we propose computational material design concerning β-CuGaO2 based on the first-principles calculations. We perform hybrid calculations by using the VASP code. It is predicted that β-CuGaO2 has a direct bandgap (Eg = 1.56 eV), which is nearly optimal for high efficiency solar cells. The calculated formation energy of Cu vacancy (VCu) is very small and can be negative depending on the Fermi level. This result reasonably explains the observed p-type conduction in this material. As for the n-type doping, Cd doping could be suitable; however, VCu formation needs to be repressed in order to realize n-type β-CuGaO2. It is also shown that halogen impurities are not suitable for n-type β-CuGaO2 because of their large formation energy. Band alignment between β-CuGaO2 and ZnO is predicted to be type-II, leading to a suggestion of photovoltaic device based on the heterojunction.

  11. Selective production of oxygenates from CO2 hydrogenation over mesoporous silica supported Cu-Ga nanocomposite catalyst

    KAUST Repository

    Huang, Kuo-Wei

    2017-11-23

    Carbon dioxide hydrogenation to oxygenates (methanol and dimethyl ether (DME)) was investigated over bifunctional supported copper catalysts promoted with gallium (Ga). Supported Cu-Ga nanocomposite catalysts were characterized by X-ray diffraction, transmission electron microscopy with energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and H2 temperature programmed reduction. In comparison with Cu-SBA-15 based catalysts, Ga promoted catalysts prepared by the urea deposition method (CuGa/SBA-15-UDP) was found active and selective for CO2 hydrogenation to oxygenates. The use of Ga as the promoter showed increased acidic sites as confirmed by the NH3-TPD, Pyridine-IR and 2,6-lutidine-IR studies. The favorable effect of Ga on CO2 conversion and selectivity to oxygenate may come from the strong interaction of Ga with silica, which is responsible for the enhanced metal surface area, formation of nanocomposite and metal dispersion. Notably, incorporation of Ga to Cu/SiO2 showed a several-fold higher rate for methanol formation (13.12 mol/gCu·sec) with a reasonable rate for the DME formation (2.15 mol/gCu·sec) as compared to those of Cu/SiO2 catalysts.

  12. The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

    International Nuclear Information System (INIS)

    Sun Lili; Yan Fawang; Zhang Huixiao; Wang Junxi; Zeng Yiping; Wang Guohong; Li Jinmin

    2009-01-01

    Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (112-bar0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-induced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices.

  13. The synthetic evaluation of CuO-MnOx-modified pinecone biochar for simultaneous removal formaldehyde and elemental mercury from simulated flue gas.

    Science.gov (United States)

    Yi, Yaoyao; Li, Caiting; Zhao, Lingkui; Du, Xueyu; Gao, Lei; Chen, Jiaqiang; Zhai, Yunbo; Zeng, Guangming

    2018-02-01

    A series of low-cost Cu-Mn-mixed oxides supported on biochar (CuMn/HBC) synthesized by an impregnation method were applied to study the simultaneous removal of formaldehyde (HCHO) and elemental mercury (Hg 0 ) at 100-300° C from simulated flue gas. The metal loading value, Cu/Mn molar ratio, flue gas components, reaction mechanism, and interrelationship between HCHO removal and Hg 0 removal were also investigated. Results suggested that 12%CuMn/HBC showed the highest removal efficiency of HCHO and Hg 0 at 175° C corresponding to 89%and 83%, respectively. The addition of NO and SO 2 exhibited inhibitive influence on HCHO removal. For the removal of Hg 0 , NO showed slightly positive influence and SO 2 had an inhibitive effect. Meanwhile, O 2 had positive impact on the removal of HCHO and Hg 0 . The samples were characterized by SEM, XRD, BET, XPS, ICP-AES, FTIR, and H 2 -TPR. The sample characterization illustrated that CuMn/HBC possessed the high pore volume and specific surface area. The chemisorbed oxygen (O β ) and the lattice oxygen (O α ) which took part in the removal reaction largely existed in CuMn/HBC. What is more, MnO 2 and CuO (or Cu 2 O) were highly dispersed on the CuMn/HBC surface. The strong synergistic effect between Cu-Mn mixed oxides was critical to the removal reaction of HCHO and Hg 0 via the redox equilibrium of Mn 4+ + Cu + ↔ Mn 3+ + Cu 2+ .

  14. Structure and magnetic properties of CuIn1-xTxTe2 (T=Co,Mn)

    Science.gov (United States)

    Guo, Yongquan; Li, Shuai; Wang, Tai; Xie, Nana

    2017-08-01

    The crystal structures, magnetic and optical properties of the 3d transition metals of Co or Mn doped CuInTe2 have been investigated using X-ray diffraction, magnetic measurements, ultraviolet and visible spectrophotometers. It is found that CuIn1-xTxTe2 (T=Co, Mn) crystallize in tetragonal chalcopyrite structure in a doping range of x=0-0.2. The structural analyses show that the 3d transition metal of Mn or Co prefers to occupy the 4b crystal position. Mn-doped CuIn1-xMnxTe2 (x=0-0.3) show paramagnetic characteristics at room temperature with the susceptibilities of about 10-5. However, lightly Co-doping into CuIn1-xCoxTe2 shows ferromagnetism at room temperature under a low applied field. This phenomenon is suggested to result from the spin-spin interactions between Co atoms which lead to the ferromagnetism. CuIn0.9Co0.1Te2 with ferromagnetism at room temperature under a low field revealed in this work indicates that it a good candidate for photovoltaic cells application since its bandgap matches well with that of CuIn1-xGaxSe2 with high conversion efficiency.

  15. Magnetic domains and twin microstructure of single crystal Ni-Mn-Ga exhibiting magnetic shape memory effect

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Kopecký, Vít; Fekete, Ladislav; Jurek, Karel; Kopeček, Jaromír; Straka, L.; Seiner, Hanuš

    2015-01-01

    Roč. 51, č. 11 (2015), s. 1-4, č. článku 2505304. ISSN 0018-9464 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic domain * magnetic shape memory * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.277, year: 2015

  16. Tuning avalanche criticality: acoustic emission during the martensitic transformation of a compressed Ni-Mn-Ga single crystal

    Czech Academy of Sciences Publication Activity Database

    Niemann, R.; Baró, J.; Heczko, Oleg; Schultz, L.; Fähler, S.; Vives, E.; Mañosa, L.; Planes, A.

    2012-01-01

    Roč. 86, č. 21 (2012), "214101-1"-"214101-6" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP107/11/0391 Institutional research plan: CEZ:AV0Z10100520 Keywords : stress -induced martensitic transformation * Ni-Mn-Ga * magnetic shape memory alloy * ferromagnetic martensite * acoustic emission during transformation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012

  17. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magneticshape memory effect

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Drahokoupil, Jan; Straka, L.

    2015-01-01

    Roč. 117, č. 17 (2015), "17E703-1"-"17E703-4" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP107/11/0391 Institutional support: RVO:68378271 Keywords : field-induced strain * temperature-dependence * alloy * martensite * Ni 2 MnGa * anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

  18. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  19. Twin interaction and large magnetoelasticity in Ni-Mn-Ga single crystals

    Science.gov (United States)

    Straka, L.; Hänninen, H.; Lanska, N.; Sozinov, A.

    2011-03-01

    We demonstrate experimentally the existence of triple twins in Ni-Mn-Ga magnetic shape memory single crystals with a modulated five-layered martensite structure using optical observations andx-ray diffraction. Subsequently, we investigate the response of the crystals with triple-twin segments to compressive loading up to several MPa. Such loading typically resulted in an abrupt rearrangement of the twin microstructure to a configuration with many fine twins (1-10 µm in size) ending at a twin boundary. This type of twin microstructure exhibited recoverable deformation with up to 0.3% macroscopic strain and an estimated 2.5% local strain, while the recoverable strain was much smaller for other studied microstructure configurations. The results indicate that by the creation of a suitable twin microstructure, the originally pseudoplastic or magnetoplastic material can be made rubberlike elastic or magnetoelastic with the macroscopic recoverable strain comparable to 2.5%.

  20. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com [Smart Materials Lab, Department of Physics, Thiagarajar College of Engineering, Madurai – 625 015 (India); Raja, M. Manivel [Defence Metallurgical Research Laboratory, Hyderabad – 500 058 (India); Pandi, R. Senthur [School of Advanced Sciences, VIT University, Vellore – 632 014 (India)

    2016-05-23

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

  1. Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires

    Directory of Open Access Journals (Sweden)

    Phillip M. Wu

    2012-01-01

    Full Text Available Nanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conductance measurements for transport characterization of Ga0.95Mn0.05As nanowires over a broad temperature range. We determine the carrier type (holes and concentration and find a sharp increase of the thermopower below temperatures of 120 K that can be qualitatively described by a hopping conduction model. However, the unusually large thermopower suggests that additional mechanisms must be considered as well.

  2. Slurry Erosion Behavior of Destabilized and Deep Cryogenically Treated Cr-Mn-Cu White Cast Irons

    Directory of Open Access Journals (Sweden)

    S. Gupta

    2016-12-01

    Full Text Available The effects of destabilization treatment and destabilization followed by cryogenic treatment have been evaluated on the microstructural evolution and sand-water slurry erosion behavior of Cr-Mn-Cu white cast irons. The phase transformations after the destabilization and cryotreatment have been characterized by bulk hardness measurement, optical and scanning electron microscopy, x-ray diffraction analysis. The static corrosion rate has been measured in tap water (with pH=7 and the erosion-corrosion behavior has been studied by slurry pot tester using sand-water slurry. The test results indicate that the cryogenic treatment has a significant effect in minimizing the as-cast retained austenite content and transforming into martensitic and bainitic matrix embedded with ultra-fine M7C3 alloy carbides. In contrast, by conventional destabilization treatment retained austenite in the matrix are not fully eliminated. The slurry erosive wear resistance has been compared with reference to destabilized and cryotreated high chromium iron samples which are commonly employed for such applications. The cryotreated Cr-Mn-Cu irons have exhibited a comparable erosive wear performance to those of high chromium irons. Higher hardness combined with improved corrosion resistance result in better slurry erosion resistance.

  3. DETERMINATION OF Cu, Fe, Mn, Zn AND FREE FATTY ACIDS IN PEQUI OIL

    Directory of Open Access Journals (Sweden)

    Aparecida M. S. Mimura

    2016-06-01

    Full Text Available Pequi (Caryocar brasiliense Camb., a typical fruit of the Brazilian Cerrado, is an important source of micronutrients and fatty acids. In this work, a new approach for the acid digestion (using H2SO4, HNO3 and H2O2 of pequi oil samples and the determination of Cu, Fe, Zn and Mn by flame atomic absorption spectrometry (F AAS was employed. Capillary zone electrophoresis (CZE was used for free fatty acid (FFA determination after simple and fast extraction with heated ethanol. Good results regarding precision (RSD < 10%, in most cases, sensitivity and adequate LOD and LOQ values were obtained. The accuracy was evaluated using spike tests and the recoveries were from 97 to 107%. The analytes were investigated in four different pequi oil samples. Fe was the trace element with the highest concentration (from 1.99 to 10.3 mg/100 g, followed by Zn, Mn and Cu (1.15 to 3.19, 0.42 to 0.91 and 0.31 to 0.56 mg/100 g, respectively. The main FFA found were oleic acid and palmitic acid (1.61 to 10.7 and 0.82 to 2.69 g/100 g, respectively, while linoleic acid (0.50 g/100 g was detected in only one sample. The pequi oil chemical composition showed good characteristics to be used as a food additive, in cosmetic formulations and for traditional medicine.

  4. Microstructure and mechanical properties of Al-Cu-Mg-Mn-Zr alloy with trace amounts of Ag

    International Nuclear Information System (INIS)

    Liu Xiaoyan; Pan Qinglin; Lu Congge; He Yunbin; Li Wenbin; Liang Wenjie

    2009-01-01

    The microstructure and mechanical properties of Al-Cu-Mg-(Ag)-Mn-Zr alloys were studied by means of tensile testing, optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that small additions of Ag to Al-Cu-Mg-Mn-Zr alloy can accelerate the hardening effect of the aged alloy and reduce the time to peak-aged. The mechanical properties can be improved both at room temperature and at elevated temperatures, which is attributed to the fine and uniform plate-like Ω precipitates. Meanwhile the ductility of the studied alloys remains at relatively high level. The major strengthening phases of the Ag-free alloy are θ' and less S', while that of Al-Cu-Mg-Mn-Zr alloy containing trace amounts of Ag are Ω and less θ'.

  5. Effect of composition on the magnetic and elastic properties shape-memory Ni-Mn-Ga

    Science.gov (United States)

    Malla, Aayush; Dapino, Marcelo J.; Lograsso, Thomas A.; Schlagel, Deborah

    2003-08-01

    The growing interest in ferromagnetic shape-memory Ni-Mn-Ga for implementation in actuator applications originates from the fact that this class of materials exhibits large strains when driven by a magnetic field. Large bidirectional strains up to a theoretical 6% are produced in these materials by twin boundary motion as martensite variants rotate to align respectively parallel or perpendicular to applied magnetic fields or stresses. These strains represent a significant improvement over piezoelectric and magnetostrictive materials. In this paper, we report on experimental measurements conducted on Ni-Mn-Ga cylindrical rods subjected to uniaxial stresses and uniaxial magnetic fields which were applied collinearly along the magnetic easy axis direction of the rods. To this end, a test apparatus was developed which consists of a water-cooled solenoid actuator and a loading fixture. Despite the lack of a readily recognizable mechanism for reversible deformations, bidirectional strains as large as 4300 ppm (0.43%) were observed, or three times the saturation magnetostriction of Terfenol-D. This paper presents room-temperature data including magnetization hysteresis, strain versus field and peak strain versus stress curves collected over a range of stresses between 0-65 MPa. From the latter set of curves, blocking force values are estimated as those for which the strain is 1% of the maximum (zero-load) strain. The results illustrate the sensitivity of material behavior with respect to composition at different driving conditions and offer insight on the choice of material compositions at which maximum actuation performance is achieved.

  6. Generalized multiband typical medium dynamical cluster approximation: Application to (Ga,Mn)N

    International Nuclear Information System (INIS)

    Zhang, Yi; Nelson, R.; Siddiqui, Elisha; Tam, K.-M.; Yu, University

    2016-01-01

    We generalize the multiband typical medium dynamical cluster approximation and the formalism introduced by Blackman, Esterling, and Berk so that it can deal with localization in multiband disordered systems with both diagonal and off-diagonal disorder with complicated potentials. We also introduce an ansatz for the momentum-resolved typical density of states that greatly improves the numerical stability of the method while preserving the independence of scattering events at different frequencies. Starting from the first-principles effective Hamiltonian, we apply this method to the diluted magnetic semiconductor Ga-1 - - - x Mn-x N, and find the impurity band is completely localized for Mn concentrations x < 0.03, while for 0.03 < x < 0.10 the impurity band has delocalized states but the chemical potential resides at or above the mobility edge. So, the system is always insulating within the experimental compositional limit (x ≈ 0.10) due to Anderson localization. But, for 0.03 < x < 0.10 hole doping could make the system metallic, allowing double-exchange mediated, or enhanced, ferromagnetism. Finally, this developed method is expected to have a large impact on first-principles studies of Anderson localization.

  7. Structural and thermal properties of ternary narrow-gap oxide semiconductor; wurtzite-derived β-CuGaO2.

    Science.gov (United States)

    Nagatani, Hiraku; Suzuki, Issei; Kita, Masao; Tanaka, Masahiko; Katsuya, Yoshio; Sakata, Osami; Miyoshi, Shogo; Yamaguchi, Shu; Omata, Takahisa

    2015-02-16

    The crystal structure of the wurtzite-derived β-CuGaO2 was refined by Rietveld analysis of high-resolution powder diffraction data obtained from synchrotron X-ray radiation. Its structural characteristics are discussed in comparison with the other I-III-VI2 and II-VI oxide semiconductors. The cation and oxygen tetrahedral distortions of the β-CuGaO2 from an ideal wurtzite structure are small. The direct band-gap nature of the β-CuGaO2, unlike β-Ag(Ga,Al)O2, was explained by small cation and oxygen tetrahedral distortions. In terms of the thermal stability, the β-CuGaO2 irreversibly transforms into delafossite α-CuGaO2 at >460 °C in an Ar atmosphere. The transformation enthalpy was approximately -32 kJ mol(-1), from differential scanning calorimetry. This value is close to the transformation enthalpy of CoO from the metastable zincblende form to the stable rock-salt form. The monovalent copper in β-CuGaO2 was oxidized to divalent copper in an oxygen atmosphere and transformed into a mixture of CuGa2O4 spinel and CuO at temperatures >350 °C. These thermal properties indicate that β-CuGaO2 is stable at ≤300 °C in both reducing and oxidizing atmospheres while in its metastable form. Consequently, this material could be of use in optoelectronic devices that do not exceed 300 °C.

  8. Influence of structural transition on the electronic structures and physical properties of Ni2MnGa alloy films

    International Nuclear Information System (INIS)

    Kim, K. W.; Kudryavtsev, Y. V.; Rhee, J. Y.; Lee, N. N.; Lee, Y. P.

    2004-01-01

    Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K, while the disordered films exhibit characteristics of amorphous alloys. It was also found that the disordering in Ni 2 MnGa alloy films did not change to any appreciable magnetic ordering down to 4 K. Annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic, magneto-optical and transport properties of the ordered Ni 2 MnGa alloy films. It was also understood, for the first time, how the structural ordering in the films influences the physical properties, including the surprising loss of ferromagnetism in the disordered films, as a result of performing electronic-structure calculations.

  9. Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li

    Science.gov (United States)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2016-03-01

    We evaluate the temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance (AMR) in (Ga,Mn)As codoped with Li by magnetotransport measurements. We find that the signs of in-plane uniaxial anisotropy and AMR change at the same temperature of ˜75 K, and that the sign of planar Hall effect does not depend on temperature.

  10. Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

    Science.gov (United States)

    Wang, Cai-Feng; Hu, Bo

    2017-10-01

    ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

  11. Microscopy modifications in an aged Cu-Al-Ni-Mn alloy; Modificacoes microestruturais em uma liga Cu-Al-Ni-Mn submetida ao envelhecimento

    Energy Technology Data Exchange (ETDEWEB)

    Gama, J.L.L. [Instituto Federal de Alagoas (IFAL), Maceio, AL (Brazil); Ferreira, R.A.S., E-mail: jorgelauriano@gmail.co [Universidade Federal de Pernambuco (DEM/UFPE), Recife, PE (Brazil). Dept. de Engenharia Mecanica

    2010-07-01

    An Cu-12Al-4Ni-3Mn shape memory alloy have been manufactured using an induction furnace of 24 KVA. After melting, chemical analyse was performed by X-ray fluorescence (XRF). The phase transformation of this alloy was studied in the different sequences produced during thermomechanic treatments. After homogenization, the ingot was solution treated at 850 deg C. At 750 deg C samples were submitted to a reduction by rolling to about 30% in thickness, followed by water quenching. In sequence, the ingot was cold-rolled at different thicknesses. In deformed state, sample of this alloy was submitted to the thermal analyse-DTA for identification of the phase transformation domains. For each identified domain, ageing was carried out, at different times, to evaluate the presence of the different phases. Samples were characterized ray-X diffraction. The results showed that the microstructural evolutions are of a complex nature. At 425 deg C temperature both recrystallization and precipitation of different phases were simultaneously observed. (author)

  12. Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Seña, N.; Dussan, A. [Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá (Colombia); Mesa, F. [Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Universidad del Rosario, Bogotá (Colombia); Castaño, E.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia)

    2016-08-07

    We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the Mn{sub Ga} substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μ{sub B}/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.

  13. Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Calderón, Jorge A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas, Universidad del Rosario, Cra. 24 No. 63C-69, Bogotá (Colombia); Dussan, A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia)

    2017-02-28

    Highlights: • (GaMn)Sb thin films were fabricated using the direct current (DC) magnetron co-sputtering. • Presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases. • A minor difference of 1% was found with respect to percolation theory, which confirmed the validity of the diffusional model in semiconductor alloys with magnetic properties. • Increase in the localized states density (N{sub F}) with increasing substrate temperature. - Abstract: We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

  14. Preparation and Layer-by-Layer Solution Deposition of Cu(In,Ga)O2 Nanoparticles with Conversion to Cu(In,Ga)S2 Films

    Science.gov (United States)

    Dressick, Walter J.; Soto, Carissa M.; Fontana, Jake; Baker, Colin C.; Myers, Jason D.; Frantz, Jesse A.; Kim, Woohong

    2014-01-01

    We present a method of Cu(In,Ga)S2 (CIGS) thin film formation via conversion of layer-by-layer (LbL) assembled Cu-In-Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles were created via a novel flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films were assembled by alternately dipping quartz, Si, and/or Mo substrates into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1–2 microns. PSS/CIGO-PAH films were found to be inadequate due to weak adhesion to the Si and Mo substrates, excessive particle diffusion during sulfurization, and mechanical softness ill-suited to further processing. PDA/CIGO-PAH films, in contrast, were more mechanically robust and more tolerant of high temperature processing. After LbL deposition, films were oxidized to remove polymer and sulfurized at high temperature under flowing hydrogen sulfide to convert CIGO to CIGS. Complete film conversion from the oxide to the sulfide is confirmed by X-ray diffraction characterization. PMID:24941104

  15. Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu2O Complex Inverse Heterostructure with GaP Buffer for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Yi-Feng Lin

    2013-10-01

    Full Text Available This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu2O complex (COC inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu2O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas.

  16. Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

    Science.gov (United States)

    Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2013-06-01

    Spin pumping is the phenomenon that magnetization precession in a ferromagnetic layer under ferromagnetic resonance produces a pure spin current in an adjacent non-magnetic layer. The pure spin current is converted to a charge current by the spin-orbit interaction, and produces a d.c. voltage in the non-magnetic layer, which is called the inverse spin Hall effect. The combination of spin pumping and inverse spin Hall effect has been utilized to determine the spin Hall angle of the non-magnetic layer in various ferromagnetic/non-magnetic systems. Magnetization dynamics of ferromagnetic resonance also produces d.c. voltage in the ferromagnetic layer through galvanomagnetic effects. Here we show a method to separate voltages of different origins using (Ga,Mn)As/p-GaAs as a model system, where sizable galvanomagnetic effects are present. Neglecting the galvanomagnetic effects can lead to an overestimate of the spin Hall angle by factor of 8, indicating that separating the d.c. voltages of different origins is critical.

  17. Thermal and galvanomagnetic properties of monocrystals CuInGa{sub 2}Te{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Abilov, Ch. I., E-mail: cabilov@yahoo.com; Hasanova, M. Sh., E-mail: mhsh28@mail.ru; Huseynova, N. T. [Azerbaijan Technical University, Baku (Azerbaijan); Zeynalov, S. A. [Azerbaijan Institute of Teachers, Baku (Azerbaijan)

    2016-03-25

    By the methods of the physic-chemical analysis, determination of density and by measurement of micro hardness the character of chemical interaction in the In{sub 2}Te{sub 3}-Cu{sub 2}Ga{sub 4}Te{sub 7} system has been investigated and its faze diagram has been plotted. It is established that the system is quasibinary, of eutectic type. In the system the chemical combination of CuGa{sub 2}InTe{sub 5} composition melting congruently at 855°C is generated. There have been revealed solid solutions boundary of which based on In{sub 2}Te{sub 3} reach 5mol% at room temperatures. Temperature dependences of electric conductivity, the coefficient of thermo-emf, general heat conductivity, the Hall mobility of charge carriers.The mechanisms of electron-phonon diffusion in crystals of its compound have been revealed.

  18. Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

    Science.gov (United States)

    Cojocaru-Mirédin, Oana; Schwarz, Torsten; Choi, Pyuck-Pa; Herbig, Michael; Wuerz, Roland; Raabe, Dierk

    2013-01-01

    Compared with the existent techniques, atom probe tomography is a unique technique able to chemically characterize the internal interfaces at the nanoscale and in three dimensions. Indeed, APT possesses high sensitivity (in the order of ppm) and high spatial resolution (sub nm). Considerable efforts were done here to prepare an APT tip which contains the desired grain boundary with a known structure. Indeed, site-specific sample preparation using combined focused-ion-beam, electron backscatter diffraction, and transmission electron microscopy is presented in this work. This method allows selected grain boundaries with a known structure and location in Cu(In,Ga)Se2 thin-films to be studied by atom probe tomography. Finally, we discuss the advantages and drawbacks of using the atom probe tomography technique to study the grain boundaries in Cu(In,Ga)Se2 thin-film solar cells. PMID:23629452

  19. Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Kurdyukov, D. A., E-mail: kurd@gvg.ioffe.ru; Shishkin, I. I.; Grudinkin, S. A.; Sitnikova, A. A.; Zamoryanskaya, M. V.; Golubev, V. G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2015-05-15

    A film-type 3D-ordered macroporous GaN-ZnS:Mn nanocomposite with the structure of an inverted opal is fabricated. Structural studies of the nanocomposite are performed, and it is shown that GaN and ZnS:Mn introduced into the pores of the silica opal are nanocrystallites misoriented with respect to each other. It is shown that the nanocomposite is a structurally perfect 3D photonic crystal. The efficiency of using a buffer of GaN crystallites to preclude interaction between the surface of the spherical a-SiO{sub 2} particles forming the opal matrix and chemically active substances introduced into the pores is demonstrated.

  20. Local structure analysis of Cu(In,Ga)Se{sub 2} by X-ray fluorescence holography

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho; Kitamura, Yuma [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Happo, Naohisa [Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194 (Japan); Hosokawa, Shinya [Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan); Hayashi, Kouichi [Faculty of Engineering, Nagoya Institute of technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555 (Japan)

    2017-06-15

    X-ray Fluorescence Holography (XFH) study of Cu(In,Ga)Se{sub 2} single crystals has been performed using an inverse mode. Energies of incident X-ray are from 9.2 to 13.2 keV. The Cu-Kα X-ray fluorescence hologram has been constructed, and atomic images were reconstructed using Barton's algorithm. Dependence of fluorescent X-ray, either Cu or Ga, on the reconstructed atomic images of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was examined. The atomic image of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was compared with that of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2}. The reconstructed atomic images of the cation (Cu, Ga, and In) plane and that of the anion (Se) plane are discussed in terms of the alloy composition. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Structure and microstructure of Ni-Mn-Ga single crystal exhibiting magnetic shape memory effect analysed by high resolution X-ray diffraction

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Cejpek, P.; Drahokoupil, Jan; Holý, V.

    2016-01-01

    Roč. 115, Aug (2016), s. 250-258 ISSN 1359-6454 R&D Projects: GA ČR GA13-30397S; GA ČR GA15-00262S Institutional support: RVO:68378271 Keywords : magnetic field-induced strain * magnetic shape memory effect * X-ray diffraction * structure of Ni-Mn-Ga Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.301, year: 2016

  2. Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux

    International Nuclear Information System (INIS)

    Han, Y; Fay, M W; Novikov, S V; Edmonds, K W; Gallagher, B L; Campion, R P; Staddon, C R; Foxon, C T; Brown, P D

    2006-01-01

    Zinc-blende Ga 1-x Mn x N epilayers grown by plasma assisted molecular beam epitaxy as a function of Mn flux have been assessed using a variety of structural characterisation techniques. Increasing Mn flux is associated with the build up of a Mn surfactant layer during the early states of growth and a transition from zinc-blende single phase growth to zincblende/ wurtzite mixed phase growth

  3. Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ajimsha, R.S.; Das, Amit K.; Joshi, M.P.; Kukreja, L.M.

    2014-01-01

    Highlights: • Band offset studies at the interface of Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures were performed using X-ray photoelectron spectroscopy. • Valance band offsets (VBO) of these hetero-structures were obtained from respective XPS peak positions and VB spectra using Kraut's equation. • Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. • Schematic band alignment diagram for the interface of these hetero-structures has been constructed. • Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. - Abstract: We have studied the band offset and alignment of pulsed laser deposited Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures using photoelectron spectroscopy. Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures

  4. Decay Spectroscopy of 76-79Cu, 79-81Zn, and 83-85Ga

    International Nuclear Information System (INIS)

    Gross, C.J.; Winger, J.A.; Ilyushkin, S.; Rykaczewski, K.P.; Liddick, S.N.; Darby, I.G.; Grzywacz, R.K.; Bingham, C.R.; Shapira, D.; Mazzocchi, C.; Padgett, S.; Rajabali, M.M.; Cartegni, L.; Zganjar, E.F.; Piechaczek, A.; Batchelder, J.C.; Hamilton, J.H.; Goodin, C.T.; Korgul, A.; Krolas, W.

    2009-01-01

    The β-decay properties of neutron-rich fission fragments of Cu, Zn, and Ga isotopes were studied at the Holifield Radioactive Ion Beam Facility. Beams of 75-79 Cu, 79-81 Zn, and 83-85 Ga were formed and delivered to two new end-stations at the facility. The Low-energy Radioactive Ion Beam Spectroscopy Station is a traditional on-line low energy (200 keV) beam line with 4 clover Ge detectors, two half-cylindrical plastic β-detectors, and a moving tape collector. In addition, many of the beams were accelerated to above 2 MeV/u and delivered to a micro-channel plate and transmission ion chamber located just in front of the same detector setup. In both cases, fine adjustment of an isobar separator was used to enhance the isotope of interest. Excited levels in the daughters and β-delayed neutron branching ratios were measured and used to confirm isotope identification. The decays from 79 Cu and 85 Ga were observed for the first time as was the 84 Ge 2 1 + level populated by β and βn decay channels

  5. The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

    International Nuclear Information System (INIS)

    Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

    2006-01-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

  6. Temperature dependence of twinning and magnetic stresses in Ni.sub.46./sub.Mn.sub.24./sub.Ga.sub.22./sub.Co.sub.4./sub.Cu.sub.4./sub. alloy with giant 12% magnetic field-induced strain

    Czech Academy of Sciences Publication Activity Database

    Sozinov, A.; Soroka, A.; Lanska, N.; Rameš, Michal; Straka, Ladislav; Ullakko, K.

    2017-01-01

    Roč. 131, Apr (2017), s. 33-36 ISSN 1359-6462 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : Heusler phases * ferromagnetic shape memory alloy * twinning * magnetic anisotropy * magnetic shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.747, year: 2016

  7. [The forming phase and various properties of Au, Ag, Cu and Ga mixture in metal fired crowns].

    Science.gov (United States)

    Yoshida, T; Miyasaka, T; Okamura, H; Mizutani, Y; Hanaka, M; Miyake, S; Seo, I; Ito, M

    1990-11-01

    A new time-saving method has been developed to produce artificial crowns without using the casting process. Plastic mixtures of gallium and other metal particles are kneaded into desired shape and then heated for hardening. By this method, the time required for hardening and producing restorative materials has been shortened greatly. In the present experiment, gallium was triturated with powdered gold, silver and copper to make binary alloy samples. The dimensional change was measured between heat treatment. After heat treatment, the test piece was examined for compressive strength, compressive shrinkage, hardness, tarnishing and difference in phase. Non-heated and heated alloy specimens (Au-Ga, Ag-Ga, Cu-Ga) expanded to form the new phase. The ability of Au-Ga samples to bear compressive strength, when heated at 300 degrees C or more (AuGa2----AuGa), became 2.6 times greater than that of non-heat-treated specimens. The compressive strength of Ag-Ga samples dropped briefly at 350 degrees C (Ag0.72Ga0.28----Ag3Ga) but increased at 450 degrees C (Ag3Ga----AgGa). The strength of Cu-Ga pieces fell by half at 475 degrees C and upward (CuGa2----unknown phase). A compression test showed that the contraction percentage of Au and Ag specimens became large as a result of heat treatment, while that of Cu alloys remained almost unchanged. The results of a hardness test (HV) were comparable to those of the compressive strength test. The Au-Ga alloys increased in hardness after high-temperature treatment. In the Ag-Ga alloys, hardness declined at 350 degrees C and increased at 450 degrees C. There was no difference in hardness between Cu specimens after heat treatment and those allowed to stand at room temperature. A tarnishing test revealed that Au-Ga samples turned slightly yellowish. In the case of Ag-Ga samples, the reflectivity Y (%) dipped slightly but discoloration was not recognizable. However, the Cu-Ga samples which were heated at temperatures of up to 280 degrees C

  8. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Sinova, J.; MacDonald, A. H.; Champion, R.P.; Gallagher, B. L.; Jungwirth, Tomáš

    2007-01-01

    Roč. 75, č. 4 (2007), 045202/1-045202/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * electronic structure calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  9. Green luminescence from Cu-diffused LiGaO2 crystals

    International Nuclear Information System (INIS)

    Holston, M.S.; Ferguson, I.P.; Giles, N.C.; McClory, J.W.; Winarski, D.J.; Ji, Jianfeng; Selim, F.A.; Halliburton, L.E.

    2016-01-01

    An intense green luminescence is observed from single crystals of LiGaO 2 doped with copper. Czochralski-grown undoped crystals are wrapped in thin copper foil and then held at 900 °C for 1 h in a flowing nitrogen atmosphere. Large concentrations of Cu + ions enter the crystals during this process and occupy Li + sites. These copper-diffused crystals are characterized with optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), thermoluminescence (TL), and electron paramagnetic resonance (EPR). An optical absorption band peaking near 350 nm is assigned to the Cu + ions at Li + sites and represents an excitation from a 3d 10 ground state to a 3d 9 4s 1 excited state. A broad PL emission from these excited Cu + ions has a peak near 523 nm and the related PLE band has a peak near 356 nm (this PLE band links the emission to the optical absorption band). Illuminating a Cu-diffused crystal at room temperature with 325 nm laser light converts a portion of the Cu + ions to Cu 2+ ions. EPR spectra from these 3d 9 ions are easily seen at low temperatures and their angular dependence is used to determine the g matrix and the 63 Cu hyperfine matrix. Subsequent heating produces a TL peak near 122 °C with a maximum in its spectral dependence near 535 nm. Correlated EPR measurements show that this TL peak occurs when trapped electrons are thermally released from unintentionally present transition-metal ions (most likely Fe) and recombine with holes at the Cu 2+ ions.

  10. Designing a New Ni-Mn-Sn Ferromagnetic Shape Memory Alloy with Excellent Performance by Cu Addition

    Directory of Open Access Journals (Sweden)

    Kun Zhang

    2018-02-01

    Full Text Available Both magnetic-field-induced reverse martensitic transformation (MFIRMT and a high working temperature are crucial for the application of Ni-Mn-Sn magnetic shape memory alloys. Here, by first-principles calculations, we demonstrate that the substitution of Cu for Sn is effective not only in enhancing the MFIRMT but also in increasing martensitic transformation, which is advantageous for its application. Large magnetization difference (ΔM in Ni-Mn-Sn alloy is achieved by Cu doping, which arises from the enhancement of magnetization of austenite due to the change of Mn-Mn interaction from anti-ferromagnetism to ferromagnetism. This directly leads to the enhancement of MFIRMT. Meanwhile, the martensitic transformation shifts to higher temperature, owing to the energy difference between the austenite L21 structure and the tetragonal martensite L10 structure increases by Cu doping. The results provide the theoretical data and the direction for developing a high temperature magnetic-field-induced shape memory alloy with large ΔM in the Ni-Mn-Sn Heusler alloy system.

  11. Kinetics of solute segregation to partial dislocations in Cu-5 at. % Mn

    International Nuclear Information System (INIS)

    Donoso, E.; Varschavsky, A.

    1999-01-01

    A model is proposed to describe the kinetics of solute segregation to partial dislocations in solid solutions of cold-rolled alloys. The case for half-edge and half-screw dislocations is considered. The model gives account of the kinetics behaviour observed in a deformed Cu-5 at. % Mn alloy where two unknown processes were assessed during calorimetric isothermal experiments. The faster processes corresponds to segregation to screw dissociated dislocations while the slower one corresponds to segregation to edge dissociated dislocation. Effective activation energies, larger for edge dislocations, are close to that for pipe diffusion along the partials corrected by pinner binding energy terms. It is also predicted that segregation occurs faster as the dislocation density is increased. (Author) 35 refs

  12. Kinetic competitivity between ordering and solute segregation to dislocations in Cu-20% at. Mn

    International Nuclear Information System (INIS)

    Donoso, E.; Varschavsky, A.

    1997-01-01

    By using differential scanning calorimetry (DSC) energetic measurements associated with the different peaks displayed during linear heating of Cu-20% at. Mn were made, employing quenched and cold-worked materials. Unique to the situation observed in the quenched alloy in which disperse order is developed, in the deformed alloy such process is inhibited by the segregation of solute atoms to partial dislocations. An appropriate model for calculation the energy evolved during the pinning process was applied in order to determine the dislocation density from the exothermic peak designated as stage 4. The computed value, which is in excellent agreement with the one obtained from expressions governing the energy release accompanying recrystallization allows to verify together with microhardness measurements and kinetic analysis that the first observed thermal effect in the deformed materials effectively corresponds a solute segregation process. (Author) 35 refs

  13. Room temperature ferromagnetism and gas sensing in ZnOnanostructures: Influence of intrinsic defects and Mn, Co, Cu doping

    CSIR Research Space (South Africa)

    Mhlongo, Gugu, H

    2016-12-01

    Full Text Available Undoped and transition metal (Cu, Co and Mn) doped ZnO nanostructures were successfully prepared via a microwave-assisted hydrothermal method followed by annealing at 500 °C. Numerous characterization facilities such as X-ray powder diffraction (XRD...

  14. Effect of alloying elements on branching of primary austenite dendrites in Ni-Mn-Cu cast iron

    Directory of Open Access Journals (Sweden)

    A. Janus

    2011-04-01

    Full Text Available Within the research, determined were direction and intensity of influence of individual alloying elements on branching degree of primary austenite dendrites in austenitic cast iron Ni-Mn-Cu. 30 cast shafts dia. 20 mm were analysed. Chemical composition of the alloywas as follows: 2.0 to 3.3 % C, 1.4 to 3.1 % Si, 2.8 to 9.5 % Ni, 0.4 to 7.7 % Mn, 0 to 4.6 % Cu, 0.14 to 0.16 % P and 0.03 to 0.04 % S.Analysis was performed separately for the dendrites solidifying in directional and volumetric way. The average distance "x" between the2nd order arms was accepted as the criterion of branching degree. It was found that influence of C, Si, Ni, Mn and Cu on the parameter "x"is statistically significant. Intensity of carbon influence is decidedly higher than that of other elements, and the influence is more intensive in the directionally solidifying dendrites. However, in the case of the alloyed cast iron Ni-Mn-Cu, combined influence of the alloying elements on solidification course of primary austenite can be significant.

  15. Synthesis and characterisation of Cu(II), Ni(II), Mn(II), Zn(II) and VO(II ...

    Indian Academy of Sciences (India)

    Unknown

    Synthesis and characterisation of Cu(II), Ni(II), Mn(II), Zn(II) and VO(II) Schiff base complexes derived from o-phenylenediamine and acetoacetanilide. N RAMAN*, Y PITCHAIKANI RAJA and A KULANDAISAMY. Department of Chemistry, VHNSN College, Virudhunagar 626 001, India e-mail: ra_man@123india.com.

  16. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  17. Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

    Science.gov (United States)

    Sancho-Juan, O.; Martínez-Criado, O.; Cantarero, A.; Garro, N.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.; Ploog, K.

    2011-05-01

    In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03Mn and Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, MnGa, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

  18. Effects of micronutrients (Cu, Zn, Mn, and Fe on the growth of Spathoglottis plicata plantlets

    Directory of Open Access Journals (Sweden)

    Zaliyatun Akhma Mat Yasin

    2017-05-01

    Full Text Available The micropropagation of valuable orchid species such as Spathoglottis plicata could help in their conservation and increase their propagation rate. The objective of this study was to investigate the effects of micronutrients (CuSO 4 , ZnSO 4 , MnSO 4 and Fe-EDTA on the growth of S. plicata plantlets. Plantlets of uniform height (1.5 cm were transferred to a half-strength MS media supplemented with vitamin B5 and different concentrations of selected micronutrients (copper, zinc, manganese and iron. The highest production of soluble protein content (38.98 mg/g of fresh weight, FW was recorded when plantlets were treated with 25 μM MnSO 4 . Spathoglottis plicata plantlets formed the highest amount of chlorophyll (22.32 mg/g FW when the growth media were supplemented with 75 μM Fe-EDTA. A total of 25 μM Fe-EDTA induced the production of up to 19.78 mg/g FW of carbohydrates in S. plicata plantlets. Furthermore, we demonstrate that different concentrations of micronutrients had different effects on the activities of several enzymes, such as peroxidase, catalase, polyphenol oxidase and nitrate reductase.

  19. Photocatalytic Conversion of Carbon Dioxide Using Zn–Cu–Ga Layered Double Hydroxides Assembled with Cu Phthalocyanine: Cu in Contact with Gaseous Reactant is Needed for Methanol Generation

    Directory of Open Access Journals (Sweden)

    Kawamura Shogo

    2015-09-01

    Full Text Available Photocatalytic conversion of CO2 into fuels is an attractive option in terms of both reducing the increased concentration of atmospheric CO2 as well as generating renewable hydrocarbon fuels. It is necessary to investigate good catalysts for CO2 conversion and to clarify the mechanism irradiated by natural light. Layered Double Hydroxides (LDH have been attracting attention for CO2 photoreduction with the expectation of sorption capacity for CO2 in the layered space and tunable semiconductor properties as a result of the choice of metal cations. This study first clarifies the effects of Cu doping to LDH comprising Zn and Al or Ga. Cu could be incorporated in the cationic layers of LDH as divalent metal cations and/or interlayer anions as Cu(OH42−. The formation rates of methanol and CO were optimized for [Zn1.5Cu1.5Ga(OH8]+2Cu(OH42−·mH2O at a total rate of 560 nmol h−1 gcat−1 irradiated by UV–visible light. Cu phthalocyanine tetrasulfonate hydrate (CuPcTs4− and silver were effective as promoters of LDH for CO2 photoreduction. Especially, the total formation rate using CuPcTs-[Zn3Ga(OH8]+2CO32−·mH2O irradiated by visible light was 73% of that irradiated by UV–visible light. The promotion was based on HOMO–LUMO excitation of CuPcTs4− by visible light. The LUMO was distributed on N atoms of pyrrole rings bound to central Cu2+ ions. The photogenerated electrons diffused to the Cu site would photoreduce CO2 progressively in a similar way to inlayer and interlayer Cu sites in the LDH in this study.

  20. A-site-ordered perovskite MnCu3V4O12 with a 12-coordinated manganese(II).

    Science.gov (United States)

    Akizuki, Yasuhide; Yamada, Ikuya; Fujita, Koji; Nishiyama, Norimasa; Irifune, Tetuo; Yajima, Takeshi; Kageyama, Hiroshi; Tanaka, Katsuhisa

    2013-10-07

    A novel cubic perovskite MnCu3V4O12 has been synthesized at a high pressure and high temperature of 12 GPa and 1373 K. This compound crystallizes in the A-site-ordered perovskite structure (space group Im3) with lattice constant a = 7.26684(10) Å at room temperature. The most notable feature of this compound lies in the fact that the Mn(2+) ion is surrounded by 12 equidistant oxide ions to form a regular icosahedron; the situation of Mn(2+) is unprecedented for the crystal chemistry of an oxide. An anomalously large atomic displacement parameter U(iso)= 0.0222(8) Å(2) is found for Mn(2+) at room temperature, indicating that the thermal oscillation of the small Mn(2+) ion in a large icosahedron is fairly active. Magnetic susceptibility and electric resistivity measurements reveal that 3d electrons of Mn(2+) ions are mainly localized, while 3d electrons in Cu(2+) and V(4+) ions are delocalized and contribute to the metallic conduction.

  1. Thin film synthesis and characterization of a chemically ordered magnetic nanolaminate (V,Mn3GaC2

    Directory of Open Access Journals (Sweden)

    Q. Tao

    2016-08-01

    Full Text Available We report on synthesis and characterization of a new magnetic nanolaminate (V,Mn3GaC2, which is the first magnetic MAX phase of a 312 stoichiometry. Atomically resolved energy dispersive X-ray mapping of epitaxial thin films reveals a tendency of alternate chemical ordering between V and Mn, with atomic layers composed of primarily one element only. Magnetometry measurements reveal a ferromagnetic response between 50 K and 300 K, with indication of a magnetic ordering temperature well above room temperature.

  2. Synthesis, Magnetization, and Electrical Transport Properties of Mn3Zn0.9Cu0.1N

    Directory of Open Access Journals (Sweden)

    Y. Yin

    2013-01-01

    Full Text Available We synthesized Mn3Zn0.9Cu0.1N by solid state reaction, and magnetic as well as electrical transport properties were investigated. It is found that Mn3Zn0.9Cu0.1N exhibits a first-order antiferromagnetism (AFM to paramagnetic (PM transition with the Néel temperature TN ~163 K, and substitution of Cu for Zn would favor ferromagnetism (FM state and weaken AFM ground state, leading to a convex curvature character of M(T curve. With high external fields 10 kOe–50 kOe, magnetic transition remains a robust AFM-PM feature while FM phase is completely suppressed. Thermal hysteresis of M(T under 500 Oe is also suppressed when the magnetic field exceeds 10 kOe. Mn3Zn0.9Cu0.1N exhibits a good metallic behavior except for a slope change around TN, which is closely related to AFM-PM magnetic transition. Compared with the first differential of resistivity with respect to temperature for (dρ/dTMn3ZnN in transition temperature range, the absolute value of (dρ/dTMn3Zn0.9Cu0.1N is much lower which is close to zero.

  3. Electrical and Optical Properties of Cu2Zn(Fe,Mn)SnS4 Films Prepared by Spray Pyrolysis

    Science.gov (United States)

    Orletskii, I. G.; Mar'yanchuk, P. D.; Solovan, M. N.; Maistruk, E. V.; Kozyarskii, D. P.

    2018-02-01

    We have analyzed the electrical and optical properties of Cu2ZnSnS4, Cu2FeSnS4, and Cu2MnSnS4 films with the p-type electrical conductivity, which were prepared by spray pyrolysis at temperature TS = 290°C using 0.1 M aqueous solutions of salts CuCl2 · 2H2O, ZnCl2 · 2H2O, MnCl2 · 2H2O, FeCl3 · 6H2O, SnCl4 · 5H2O, and (NH2)CS. The energy parameters have been determined from analyzing the electrophysical properties of the films using the model of energy barriers at grain boundaries in polycrystalline materials, and the thickness of intercrystallite boundaries has been estimated. The extent of the influence of the hole concentration p 0 in the bulk of crystallites and height E b of the energy barriers between grains on the electrical conductivity has been determined. The optical bandgap width for thin Cu2Zn(Fe,Mn)SnS4 films has been calculated based on analyzing the spectral dependences of the absorption coefficient.

  4. CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

    Directory of Open Access Journals (Sweden)

    Taisiia Berestok

    2018-04-01

    Full Text Available The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs. We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

  5. Distribution of α and β phases in the coexistence regime in MnAs(0001) layers grown on GaAs(111)B

    International Nuclear Information System (INIS)

    Takagaki, Y.; Wiebicke, E.; Daeweritz, L.; Ploog, K.H.

    2004-01-01

    The discontinuous change in the lattice constant that occurs at the first-order phase transition between α- and β-MnAs gives rise to a coexistence of the two phases in MnAs layers grown on GaAs substrates. When the GaAs substrates are oriented in the (111)B direction, the c axis of MnAs is aligned normal to the growth plane. We identify the domain structure of α- and β-MnAs for this crystal orientation by utilizing the different reactivities of the two phases against wet chemical etching. Submicrometer-size islands of α-MnAs are found to be interwoven in a honeycomblike network of β-MnAs. We also show that this domain structure combined with strain effects results in a formation of MnAs lumps by etching

  6. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.

    Science.gov (United States)

    Souma, S; Chen, L; Oszwałdowski, R; Sato, T; Matsukura, F; Dietl, T; Ohno, H; Takahashi, T

    2016-06-06

    Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry.

  7. Structural, transport, magnetic, magnetocaloric properties and critical analysis of Ni-Co-Mn-Ga Heusler alloys

    Science.gov (United States)

    Arumugam, S.; Devarajan, U.; Esakki Muthu, S.; Singh, Sanjay; Thiyagarajan, R.; Raja, M. Manivel; Rama Rao, N. V.; Banerjee, Alok

    2017-11-01

    In this work, we have investigated structural, transport, magnetic, magnetocaloric (MC) properties and critical exponents analysis of the (Ni2.1-xCox)Mn0.9 Ga (x = 0, 0.04, 0.12 and 0.2) Heusler alloys. For all compositions, cubic austenite (A) phase with metallic character is observed at room temperature (RT). With increasing of Co content, magnitude of resistivity decreases, whereas residual resistivity (ρ0) and electron scattering factor (A) increases linearly. Magnetic measurements exhibit that ferromagnetic (FM) Curie temperature (TCA) increases towards RT by increasing Co concentration. All samples show conventional MC and maximum magnetic entropy change (ΔSMpeak) of -2.8 Jkg-1 K-1 is observed for x = 0.12 at 147 K under 5 T. Further, hysteresis is observed between cooling and warming cycles around FM-PM (TCA) transition in x = 0, 0.04 samples, which suggests that first order nature of transition. However, there is no hysteresis across TCA for x = 0.12 and 0.2 samples suggesting second-order nature of the transition. The critical exponents are calculated for x = 0.12 sample around TCA using Arrott plot and Kouvel-Fisher method, the estimated critical exponents are found closer to the mean-field model reveals the long range ferromagnetic ordering in this composition.

  8. Magnetic properties of epitaxial MnAs thin films on GaAs (001)

    CERN Document Server

    Park, Y S

    2000-01-01

    The magnetic properties of two types of epitaxial MnAs films on GaAs (001) substrates in the thickness range of 20 approx 200 nm were studied. Using longitudinal a magneto-optical Kerr-effect(MOKE) apparatus at lambda=632.8 nm, we determined the Curie temperatures of the 100-nm thick films to be 54.0+-0.5 .deg. C and 63.7+-0.5 .deg. C for type A films and type B films, respectively. The observed Curie temperatures corresponded to increases of 36.8 .deg. C and 33.9 .deg. C per one percent increase in the unit cell volume for type A and B, respectively. The normalized maximum MOKE signal from the type A film exhibited a first-order-like magnetic transition while that of type B underwent a second-order-like transition. These different behaviors between types A and B stem from different residual stresses being exerted on the hexagonal phase. Utilizing a Foner-type vibrating sample magnetometer at room temperature, we examined the thickness dependence of the coercive force and the saturation magnetization of the f...

  9. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As

    Science.gov (United States)

    Souma, S.; Chen, L.; Oszwałdowski, R.; Sato, T.; Matsukura, F.; Dietl, T.; Ohno, H.; Takahashi, T.

    2016-06-01

    Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry.

  10. Temperature and time dependent magnetic phenomena in a nearly stoichiometric Ni2MnGa alloy

    International Nuclear Information System (INIS)

    Gomez-Polo, C; Perez-Landazabal, J I; Recarte, V; Sanchez-Alarcos, V; Chernenko, V A

    2009-01-01

    In this work, the temperature and time dependence of the magnetic properties of a polycrystalline Ni 49.7 Mn 24.1 Ga 26.2 alloy is analysed. The law of approach to magnetic saturation has been employed to estimate the magnetic anisotropy in the three structural phases of the alloy (martensitic, pre-martensitic and austenitic). The temperature dependences of magnetic parameters, such as the magnetic susceptibility and coercive field, are interpreted in terms of the changes in the magnetic anisotropy taking place with the structural transformations. The strong magnetocrystalline anisotropy is confirmed to mainly control the magnetic response of the low temperature martensitic phase. Furthermore, magnetic relaxation studies (magnetic after-effect) have been employed to analyse the main differences between the magnetization processes in the three characteristic structural phases. The time decay of the magnetization displays a distinctive response in the pre-martensitic state. The results (logarithmic time decay of the remanent magnetization and field dependence of the magnetic viscosity) indicate the thermally activated nature of the relaxation process.

  11. Negative and positive magnetocaloric effect in Ni-Fe-Mn-Ga alloy

    International Nuclear Information System (INIS)

    Duan Jingfang; Huang Peng; Zhang Hu; Long Yi; Wu Guangheng; Rongchang Ye; Chang Yongqin; Farong Wan

    2007-01-01

    The phase transition process and magnetic entropy change ΔS of Ni 54.5 FeMn 20 Ga 24.5 alloy were studied. Substitution of Fe for Ni increases the Curie temperature and decreases the temperature of martensitic phase transition. The transition from ferromagnetic martensitic to ferrormagnetic austenitic state leads to an abrupt increase of magnetization below 0.5T and an abrupt decrease of magnetization above 0.5T. The sign of ΔS changes from positive to negative with increasing the applied field from 0.5 to 2T. The maximal value of the positive magnetic entropy change ΔS is about 3.1J/kgK for the applied field from 0 to 0.5T. The increase of applied field from 1.5T results in a negative ΔS. The peak of negative ΔS is -2.1J/kgK for a field change of 2T

  12. The role of Cd and Ga in the Cu(In,Ga)S2/CdS heterojunction studied with X-ray spectroscopic methods

    International Nuclear Information System (INIS)

    Johnson, Benjamin E.

    2010-01-01

    Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S 2 /CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S 2 (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S 2 /CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S 2 /CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S 2 conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot be CdS as this is

  13. The role of Cd and Ga in the Cu(In,Ga)S{sub 2}/CdS heterojunction studied with X-ray spectroscopic methods

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Benjamin E.

    2010-08-15

    Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S{sub 2}/CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S{sub 2} (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S{sub 2}/CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S{sub 2}/CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S{sub 2} conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot

  14. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Shafarman, William N. [Univ. of Delaware, Newark, DE (United States)

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  15. Multiple tuning of magnetic biskyrmions using in situ L-TEM in centrosymmetric MnNiGa alloy

    Science.gov (United States)

    Peng, Licong; Zhang, Ying; He, Min; Ding, Bei; Wang, Wenhong; Li, Jianqi; Cai, Jianwang; Wang, Shouguo; Wu, Guangheng; Shen, Baogen

    2018-02-01

    Magnetic skyrmions are topologically protected spin configurations and have recently received growingly attention in magnetic materials. The existence of biskyrmions within a broad temperature range has been identified in our newly-discovered MnNiGa material, promising for potential application in physics and technological study. Here, the biskyrmion microscopic origination from the spin configuration evolution of stripe ground state is experimentally identified. The biskyrmion manipulations based on the influences of the basic microstructures and external factors such as grain boundary confinement, sample thickness, electric current, magnetic field and temperature have been systematically studied by using real-space Lorentz transmission electron microscopy. These multiple tuning options help to understand the essential properties of MnNiGa and predict a significant step forward for the realization of skyrmion-based spintronic devices.

  16. Destruction and Accompanying Phenomena in a Ferromagnetic Ni2MnGa Single Crystal with a Shape-Memory Effect

    Science.gov (United States)

    Ostrikov, O. M.; Shmatok, E. V.

    2015-01-01

    Features of the shape of a macroscopic interplanar crack have been studied, and phenomena accompanying destruction in a monocrystalline ferromagnetic Ni2MnGa alloy with shape memory have been analyzed. It has been established that the initiation of destruction in Ni2MnGa is actively influenced by the processes of slip and interaction of twin boundaries in twin planes which are at small angles to each other, and also by the formation of Rose channels. On the source side of the surface at which the crack has nucleated, it is tooth-shaped. On this surface, there are signs of rotation of the crystal lattice from twins with boundaries parallel and perpendicular to the crack's edges. The opening of the crack in its boundary regions leads to partial untwining.

  17. Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1-xMn xN

    International Nuclear Information System (INIS)

    Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Fenwick, William E.; Senawiratne, Jayantha; Song, Qing; Summers, Christopher J.; Zhang, Z. John; Dietz, Nikolaus; Ferguson, Ian T.

    2006-01-01

    Recent theoretical work for Ga 1-x Mn x N predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga 1-x Mn x N is still controversial, as there are conflicting experimental reports owing to the disparity in crystalline quality and phase purity of Ga 1-x Mn x N produced by different methods. In this work, metal-organic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga 1-x Mn x N of varying thickness and manganese doping levels using Cp 2 Mn as the Mn source. Crystalline quality and phase purity were determined by high-resolution X-ray diffraction, indicating that no macroscopic second phases are formed. Atomic force microscopy revealed MOCVD-like step flow growth patterns and a mean surface roughness of 0.378 nm in optimally grown films, which is close to that from the as-grown template layer of 0.330 nm. No change in the growth mechanism and morphology with Mn incorporation is observed. A uniform Mn concentration in the epitaxial layers is confirmed by secondary ion mass spectroscopy. SQUID measurements showed an apparent room temperature ferromagnetic hysteresis with saturation magnetizations of over 2 μ B /Mn at x = 0.008, which decreases with increasing Mn incorporation. Upon high-temperature annealing, numerous changes are observed in these properties, including an increase in surface roughness due to surface decomposition and a large decrease in the magnetic signature. A similar decrease in the magnetic signature is observed upon co-doping with the shallow donor silicon during the growth process. These results demonstrate the critical importance of controlling the Fermi level relative to the Mn 2+/3+ acceptor level in Ga 1-x Mn x N in order to achieve strong ferromagnetism

  18. Magnetic properties of the semimagnetic semiconductor Zn0.15Mn0.85Ga2Se4

    International Nuclear Information System (INIS)

    Cadenas, Ruben; Perez, Flor V.; Quintero, Miguel; Quintero, Eugenio; Tovar, Rafael; Morocoima, Manuel; Gonzalez, Jesus; Bocaranda, P.; Ruiz, J.; Broto, J.M.; Rakoto, H.

    2007-01-01

    We report on the magnetic measurements of the semimagnetic semiconductor Zn 0.15 Mn 0.85 Ga 2 Se 4 (ZMGSe). The DC susceptibility and high magnetic field indicate that the ZMGSe orders antiferromagnetically at T∼6 K and undergoes into a spin-flop phase below this temperature. Arrott plots and magnetic entropy changes were used to characterize the order of the transitions

  19. Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering

    Science.gov (United States)

    Wang, Lei; Li, Liuan; Xie, Tian; Wang, Xinzhi; Liu, Xinke; Ao, Jin-Ping

    2018-04-01

    In present study, copper oxide films were prepared at different sputtering powers (10-100 W) using magnetron reactive sputtering. The crystalline structure, surface morphologies, composition, and optical band gap of the as-grown films are dependent on sputtering power. As the sputtering power decreasing from 100 to 10 W, the composition of films changed from CuO to quasi Cu2O domination. Moreover, when the sputtering power is 10 W, a relative high hole carrier density and high-surface-quality quasi Cu2O thin film can be achieved. AlGaN/GaN HFETs were fabricated with the optimized p-type quasi Cu2O film as gate electrode, the threshold voltage of the device shows a 0.55 V positive shift, meanwhile, a lower gate leakage current, a higher ON/OFF drain current ratio of ∼108, a higher electron mobility (1465 cm2/Vs), and a lower subthreshold slope of 74 mV/dec are also achieved, compared with the typical Ni/Au-gated HFETs. Therefore, Cu2O have a great potential to develop high performance p-type gate AlGaN/GaN HFETs.

  20. Imaging of interstitial atoms in Ga.sub.1-x./sub.Mn.sub.x./sub.As layers by means of X-ray diffuse scattering

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Busetto, E.; Lausi, A.; Šourek, Zbyněk; Kub, Jiří; Cukr, Miroslav; Novák, Vít; Olejník, Kamil; Wright, J.

    2008-01-01

    Roč. 41, - (2008), s. 544-547 ISSN 0021-8898 R&D Projects: GA ČR GA102/06/0381; GA AV ČR IAA100100529 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100523 Keywords : GaMnAs layer * x-ray diffuse scattering * annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.212, year: 2008

  1. Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Xin, Peipei

    Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction

  2. Structural and magnetic properties of tetragonal Heusler compounds Mn{sub 2-x}Fe{sub 1+x}Ga

    Energy Technology Data Exchange (ETDEWEB)

    Gasi, Teuta; Winterlik, Juergen; Balke, Benjamin; Fecher, Gerhard H.; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes-Gutenberg-University, 55099 Mainz (Germany)

    2011-07-01

    Heusler compounds such as tetragonal phase of Mn{sub 3-x}Ga are currently receiving increased interest. These materials play an important role due to their multifunctional properties and high potential for applications in STT-MRAM technology. STT-MRAMs require high Curie temperatures, low Gilbert damping constants, and low magnetic moments. This contribution focuses on the structural and magnetic properties of tetragonal Heusler compounds Mn{sub 2-x}Fe{sub 1+x}Ga. These compounds are of exceptional importance due to their large diversity of adaptive magnetic properties and their tunability by variation of several physical parameters such as temperature, magnetic field, or electron-doping. The series of samples was successfully synthesized by arc-melting and characterized. The magnetic measurements show that all these materials show high T{sub C}s above 600 K and diverse magnetic hardness. Additionally, we found that the compound Fe{sub 2}MnGa shows magnetic shape memory behavior.

  3. Ecological modelling of a wetland for phytoremediating Cu, Zn and Mn in a gold–copper mine site using Typha domingensis (Poales: Typhaceae near Orange, NSW, Australia

    Directory of Open Access Journals (Sweden)

    Subrahmanyam Sreenath

    2017-12-01

    Full Text Available An artificial wetland was computationally modelled using STELLA®, a graphical programming tool for an Au-Cu mine site in Central-west NSW, the aim of which was to offer a predictive analysis of a proposed wetland for Cu, Zn and Mn removal using Typha domingensis as the agent. The model considers the important factors that impact phytoremediation of Cu, Zn and Mn. Simulations were performed to optimise the area of the wetland; concentration of Cu, Zn and Mn released from mine (AMD; and flow rates of water for maximum absorption of the metals. A scenario analysis indicates that at AMD = 0.75mg/L for Cu, Zn and Mn, 12.5, 8.6, and 357.9 kg of Cu, Zn and Mn, respectively, will be assimilated by the wetland in 35 years, which would be equivalent to 61 mg of Cu/kg, 70 mg of Zn/kg and 2,886 mg of Mn/kg of T. domingensis, respectively. However, should Cu, Zn and Mn in AMD increase to 3 mg/L, then 18.6 kg of Cu and 11.8 kg of Zn, respectively, will be assimilated in 35 years, whereas no substantial increase in absorption for Mn would occur. This indicates that 91 mg of Cu, 96 mg of Zn and 2917 mg of Mn will be assimilated for every kg of T. domingensis in the wetland. The best option for Cu storage would be to construct a wetland of 50,000 m2 area (AMD = 0.367 mg/L of Cu, which would capture 14.1 kg of Cu in 43 years, eventually releasing only 3.9 kg of Cu downstream. Simulations performed for a WA of 30,000 m2 indicate that for AMD = 0.367 mg/L of Zn, the wetland captures 6.2 kg, releasing only 3.5 kg downstream after 43 years; the concentration of Zn in the leachate would be 10.2 kg, making this the most efficient wetland amongst the options considered for phytoremediating Zn. This work will help mine managers and environmental researchers in developing an effective environmental management plan by focusing on phytoremediation, with a view at extracting Cu, Zn and Mn from the contaminated sites.

  4. Zeeman Splitting Caused by Localized sp-d Exchange Interaction in Ferromagnetic GaMnAs Observed by Magneto-Optical Characterization

    Science.gov (United States)

    Tanaka, Hiroki

    The field of spintronics is considered as the next generation of spin-based electronics rather than the flow of charges utilized in electronics. It is expected that it will have some advantages in areas of information storage densities, switching speed, power consumption, manufacturing costs and others. One of the alternatives in developing a successful spintronics materials is the transition metal (TM)-doped III-V diluted magnetic semiconductors (DMSs) and GaMnAs is the proto-type ferromagnetic DMSs. Currently, the origin of ferromagnetism in GaMnAs is not fully clarified yet due to the complexity of an electronic band structure after doping of the Mn into GaAs. However, the magneto-optical characterization, especially, magnetic circular dichroism (MCD), is a very powerful technique to investigate DMS because one can obtain the information of the electronic band structure. Thus, we have performed systematic investigations of the MCD spectra and optical absorption spectra of the Ga1-xMnxAs with different concentrations of Mn. In this project, we have conducted the measurement using the transmission-mode MCD, the reflection-mode MCD and the magneto-optical Kerr effect (MOKE) for three different kinds of GaMnAs samples fabricated with the same growth conditions; GaMnAs on sapphire, GaMnAs on InP, and free-standing GaMnAs, respectively. We have successfully estimated the Zeeman splitting energy of both L (E1 and E1+Delta 1) and G (E0 and E 0+Delta0) critical points (CPs) for these materials. We utilized an energy derivative of the Gaussian function to decompose the MCD spectrum into the impurity band (IB) related background and two dispersion components around L-CPs which are expected in theory. Then, using the rigid band shift model we calculated the Zeeman splitting energy of E1 (L-CP). The Zeeman splitting energy at E1 (L-CP) was estimated to be larger than ~ 4 meV in Ga0.97Mn0.03As on sapphire, ~ 0.6 meV in Ga0.97Mn0.03As on InP, and ~ 6.5 meV in free-standing Ga0

  5. Bound magnetic polaron driven low-temperature ferromagnetism in Cu{sub 1−x}Mn{sub x}O compounds

    Energy Technology Data Exchange (ETDEWEB)

    Cai, J.Z.; Li, L.; Wang, S.; Zou, W.Q.; Wu, X.S., E-mail: xswu@nju.edu.cn; Zhang, F.M., E-mail: fmzhang@nju.edu.cn

    2013-09-01

    Partial Mn atoms have been confirmed to enter the CuO lattice and form the Cu{sub 1−x}Mn{sub x}O compounds in the case of doping with 0≤x≤0.2 by the sol–gel method. With increasing Mn content, magnetism is observed. The magnetic critical transition temperature increases with enhanced magnetism, which obeys the bound magnetic polaron theory. The electronic transportation shows an insulating behavior as the band-gap decreases. Our results may indicate that CuO may be used as a candidate of magnetic semiconductor.

  6. Assessing Mn, Fe, Cu, Zn, and Cd pollution in bottom sediments of Wadi Al-Arab Dam, Jordan.

    Science.gov (United States)

    Ghrefat, Habes; Yusuf, Nigem

    2006-12-01

    Thirty five bottom sediment samples were collected in a grid pattern from Wadi Al-Arab Dam. The present study focuses on the levels of Mn, Fe, Cu, Zn, Cd, total organic matter (TOM) and carbonate content (CO(3)(-2)) in order to assess the extent of environmental pollution and to discuss the origin of these contaminants in sediments of the dam. Concentration data were processed using correlation analysis and factor analysis. The results of correlation analysis and factor analysis show low positive and negative correlations among Mn, Fe, Cu, Zn, Cd, TOM, and CO(3)(-2) and indicate that heavy metals in sediments of Wadi Al-Arab have different anthropogenic and natural sources. The results also confirm the complicated behavior of these pollutants, that can be influenced by many factors. Sediments pollution assessment was carried out using enrichment factor and the geoaccumulation index. The calculation of enrichment factors showed that Mn and Cu are depleted by 0.76, and 1.33, respectively, whereas Cu, Zn, and Cd are enriched by 3.6, and 30, respectively. The results of geoaccumulation index reveal that sediments of Wadi Al-Arab are uncontaminated with Mn, Fe, and Cu, moderately contaminated with Zn, and strongly to extremely contaminated with Cd. Some of the elevated concentration of Zn and Cd are probably due to anthropogenic sources nearby the dam site. These sources mainly include fertilizers and pesticides used in agricultural activities, and the effluent of Irbid City treatment plant. Environmental risks of Cd and Zn were evaluated using the risk assessment code (RAC) and sequential extraction method. Zn poses a low environmental risk, whereas Cd poses a medium environmental risk.

  7. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

    Energy Technology Data Exchange (ETDEWEB)

    Mansfield, Lorelle M.; Kuciauskas, Darius; Dippo, Patricia; Li, Jian V.; Bowers, Karen; To, Bobby; DeHart, Clay; Ramanathan, Kannan

    2015-06-14

    Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

  8. Residual resistivity of (Ga,Mn)As alloys from ab initio calculations

    Czech Academy of Sciences Publication Activity Database

    Turek, Ilja; Kudrnovský, Josef; Drchal, Václav; Weinberger, P.

    272-276, č. 3 (2004), s. 1987-1988 ISSN 0304-8853 R&D Projects: GA ČR GA106/02/0943; GA ČR GA202/01/0764 Institutional research plan: CEZ:AV0Z2041904 Keywords : magnetic semiconductors * residual resistivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.031, year: 2004

  9. Morphological, Structural, and Optical Properties of Single-Phase Cu(In,GaSe2 Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

    Directory of Open Access Journals (Sweden)

    Francis B. Dejene

    2014-01-01

    Full Text Available The relatively small band gap values (~1 eV of CuInSe2 thin films limit the conversion efficiencies of completed CuInSe2/CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to homogeneously increase the band gap by substituting indium with gallium. In this study, thermal evaporation of InSe/Cu/Gase precursors was exposed to an elemental Se vapour under defined conditions. This technique produced large-grained, single-phase Cu(In,GaSe2 thin films with a high degree of in-depth compositional uniformity. The selenization temperature, ramp time, reaction period, and the effusion cell temperature with respect to the Cu(In,GaSe2 films were optimized in this study. The homogeneous incorporation of Ga into CuInSe2 led to a systematic shift in the lattice spacing parameters and band gap of the absorber films. Under optimized conditions, gallium in cooperation resulted only in a marginal decrease in the grain size, X-ray diffraction studies confirmed single-phase Cu(In,GaSe2 material, and X-ray photoluminescence spectroscopy in-depth profiling revealed a uniform distribution of the elements through the entire depth of the alloy. From these studies optimum selenization conditions were determined for the deposition of homogeneous Cu(In,GaSe2 thin films with optimum band gap values between 1.01 and 1.21 eV.

  10. The origin and control of the sources of AMR in (Ga,Mn)As devices

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Novák, Vít; Olejník, Kamil; Kovalev, A.A.; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2009-01-01

    Roč. 321, č. 8 (2009), s. 1001-1008 ISSN 0304-8853 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.204, year: 2009

  11. Ordinary and extraordinary Coulomb blockade magnetoresistance in (Ga,Mn)As single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Novák, Vít; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 144, - (2007), s. 536-541 ISSN 0038-1098 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA MŠk LC510; GA ČR GEFON/06/E001; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.535, year: 2007

  12. Characterisation of a natural quartz crystal as a reference material for microanalytical determination of Ti, Al, Li, Fe, Mn, Ga and Ge

    Science.gov (United States)

    Audetat, Andreas; Garbe-Schonberg, Dieter; Kronz, Andreas; Pettke, Thomas; Rusk, Brian G.; Donovan, John J.; Lowers, Heather

    2015-01-01

    A natural smoky quartz crystal from Shandong province, China, was characterised by laser ablation ICP-MS, electron probe microanalysis (EPMA) and solution ICP-MS to determine the concentration of twenty-four trace and ultra trace elements. Our main focus was on Ti quantification because of the increased use of this element for titanium-in-quartz (TitaniQ) thermobarometry. Pieces of a uniform growth zone of 9 mm thickness within the quartz crystal were analysed in four different LA-ICP-MS laboratories, three EPMA laboratories and one solution-ICP-MS laboratory. The results reveal reproducible concentrations of Ti (57 ± 4 μg g-1), Al (154 ± 15 μg g-1), Li (30 ± 2 μg g-1), Fe (2.2 ± 0.3 μg g-1), Mn (0.34 ± 0.04 μg g-1), Ge (1.7 ± 0.2 μg g-1) and Ga (0.020 ± 0.002 μg g-1) and detectable, but less reproducible, concentrations of Be, B, Na, Cu, Zr, Sn and Pb. Concentrations of K, Ca, Sr, Mo, Ag, Sb, Ba and Au were below the limits of detection of all three techniques. The uncertainties on the average concentration determinations by multiple techniques and laboratories for Ti, Al, Li, Fe, Mn, Ga and Ge are low; hence, this quartz can serve as a reference material or a secondary reference material for microanalytical applications involving the quantification of trace elements in quartz.

  13. The distribution of four trace elements (Fe, Mn, Cu, Zn in forage and the relation to scrapie in Iceland

    Directory of Open Access Journals (Sweden)

    Jóhannesson Torkell

    2010-05-01

    Full Text Available Abstract Background Previous studies indicated that the iron (Fe/manganese (Mn ratio in forage of sheep was significantly higher on scrapie-afflicted farms than on farms in other scrapie categories. This study was conducted to examine whether Fe and Mn in forage of sheep varied in general according to the scrapie status of different areas in the country. Copper (Cu and zinc (Zn were also included because of a possible relation to scrapie. Methods The country was subdivided into seven Areas (I-VII. Three Areas (I, IV, VII were designated scrapie-free (never diagnosed or eradicated and three as scrapie-endemic (II, III, VI; status of Area V was taken as unsettled. Of the harvest 2007 1552 samples were analysed from 344 farms all over the country, mostly grass silage from plastic bales (>90% and from the first cut (70% or more. Results were expressed as mg kg-1 dry matter. Results Fe varied enormously from less than 100 mg kg-1 to 5000 mg kg-1. Mn varied nearly thirtyfold (17-470 mg kg-1. Fe concentration was significantly lower in Area I than in Areas II, V and VI. Mn concentration was significantly higher in Areas I, IV and VII than in Areas II, III, V and VI. The Fe/Mn ratio was significantly less in Area I than in the other areas (except Area IV. Mean Cu concentration was 6.6-8.3 mg kg-1 and the mean Zn concentration was 24-29 mg kg-1. They differed significantly in some areas. Conclusions 1 Fe tended to be in lower amounts in sheep forage in scrapie-free than in endemic areas; 2 Mn was in higher amounts in forage in scrapie-free than endemic areas; 3 the Fe/Mn ratio was lower in scrapie-free than in endemic areas; 4 the Fe/Mn ratio may possibly be used as an indicator of scrapie status; 5 Cu and Zn in sheep forage were not related to scrapie; 6 further study on the role of Fe and Mn in the occurrence of scrapie in Iceland is needed.

  14. Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (0 0 1) films

    International Nuclear Information System (INIS)

    Pechan, Michael J.; Yu, Chengtao; Carr, David; Palmstroem, Chris J.

    2005-01-01

    Remarkably large, strain-induced anisotropy is observed in the thin-film Heusler alloy Co 2 MnGa. 30 nm Co 2 MnGa (0 0 1) films have been epitaxially grown on different interlayers/substrates with varied strain, and investigated with ferromagnetic resonance. The film grown on ErAs/InGaAs/InP experiences tension strain, resulting in an out-of-plane strain-induced anisotropy (∼1.1x10 6 erg/cm 3 ) adding to the effects of shape anisotropy. In contrast, the film grown on ScErAs/GaAs, experiences a compression strain, resulting in an out-of-plane strain-induced anisotropy (∼3.3x10 6 erg/cm 3 ) which almost totally cancels the effects of shape anisotropy, thus rendering the film virtually isotropic. This results in the formation of stripe domains in remanence. In addition, small, but well-defined 2-fold and 4-fold in-plane anisotropy coexist in each sample with weak, but interesting strain dependence. Transport measurement shows small (<1%) magnetoresistance effects in the compression film, but negligible magnetoresistance in the relaxed and tension strained samples

  15. Mitigation of chromium poisoning of cathodes in solid oxide fuel cells employing CuMn1.8O4 spinel coating on metallic interconnect

    Science.gov (United States)

    Wang, Ruofan; Sun, Zhihao; Pal, Uday B.; Gopalan, Srikanth; Basu, Soumendra N.

    2018-02-01

    Chromium poisoning is one of the major reasons for cathode performance degradation in solid oxide fuel cells (SOFCs). To mitigate the effect of Cr-poisoning, a protective coating on the surface of interconnect for suppressing Cr vaporization is necessary. Among the various coating materials, Cu-Mn spinel coating is considered to be a potential candidate due to their good thermal compatibility, high stability and good electronic conductivity at high temperature. In this study, Crofer 22 H meshes with no protective coating, those with commercial CuMn2O4 spinel coating and the ones with lab-developed CuMn1.8O4 spinel coating were investigated. The lab-developed CuMn1.8O4 spinel coating were deposited on Crofer 22 H mesh by electrophoretic deposition and densified by a reduction and re-oxidation process. With these different Crofer 22 H meshes (bare, CuMn2O4-coated, and CuMn1.8O4-coated), anode-supported SOFCs with Sr-doped LaMnO3-based cathode were electrochemically tested at 800 °C for total durations of up to 288 h. Comparing the mitigating effects of the two types of Cu-Mn spinel coatings on Cr-poisoning, it was found that the performance of the denser lab-developed CuMn1.8O4 spinel coating was distinctly better, showing no degradation in the cell electrochemical performance and significantly less Cr deposition near the cathode/electrolyte interface after the test.

  16. Ab initio studies on electronic and magnetic properties of X2PtGa (X=Cr, Mn, Fe, Co) Heusler alloys

    International Nuclear Information System (INIS)

    Roy, Tufan; Chakrabarti, Aparna

    2017-01-01

    Using first-principles calculations based on density functional theory, we probe the electronic and magnetic properties of X 2 PtGa (X being Cr, Mn, Fe, Co) Heusler alloys. Our calculations predict that all these systems possess inverse Heusler alloy structure in the respective ground states. Application of tetragonal distortion leads to lowering of energy with respect to their cubic phase. The equilibrium volumes of both the phases are nearly the same. These indicate that the materials studied here are prone to undergo martensite transition, as has been recently shown theoretically for Mn 2 PtGa in the literature. Ground state with a tetragonal symmetry is corroborated by the observation of soft tetragonal shear constants in the cubic phase. By comparing the energies of various types of magnetic configurations we predict that Cr 2 PtGa and Mn 2 PtGa possess ferrimagnetic configuration whereas Fe 2 PtGa and Co 2 PtGa possess ferromagnetic configuration in their respective ground states. - Highlights: • We predict stable martensitic phase of X 2 PtGa (X=Cr, Mn, Fe, Co). • Co 2 PtGa possesses least inherent brittleness among all the materials. • Martensite transitions are possible for the investigated materials. • A tetragonal ground state with high spin polarization is predicted for Co 2 PtGa.

  17. Influence of Mn on the tensile properties of SSM-HPDC Al-Cu-Mg-Ag alloy A201

    CSIR Research Space (South Africa)

    Müller, H

    2011-03-01

    Full Text Available to lead to the formation of large fractions of coarse and brittle constituents which act as crack initiators The influence of Mn on the tensile properties of SSM-HPDC Al-Cu-Mg-Ag alloy A201 by H. M?ller*, E.P. Masuku*, U.A. Curle*, P.C. Pistorius.... 213. 9. MASUKU, E.P., GOVENDER, G., IVANCHEV, L., and M?LLER, H. Rheocasting of Al-Cu alloy A201 with different silver contents, Solid State Phenomena, 2008, vol. 141-143, p. 151. 10. ASTM E 8M - 04: Standard test methods for tension testing...

  18. Effective separation method of {sup 64}Cu from {sup 67}Ga waste product with a solvent extraction and chromatography

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.H. [Lab. of Accelerator Application Research, Korea Institute of Radiological and Medical Sciences (KIRAMS), 215-4 Gongreung-Dong, Nowon-Gu, Seoul, 139-706 (Korea, Republic of); Park, H. [Lab. of Radiopharmaceuticals, Korea Institute of Radiological and Medical Sciences (KIRAMS), 215-4 Gongreung-Dong, Nowon-Gu, Seoul, 139-706 (Korea, Republic of); Chun, K.S., E-mail: kschun@kcch.re.k [Lab. of Radiopharmaceuticals, Korea Institute of Radiological and Medical Sciences (KIRAMS), 215-4 Gongreung-Dong, Nowon-Gu, Seoul, 139-706 (Korea, Republic of)

    2010-09-15

    A simple chemical process with a solvent extraction was investigated as an effective separation method for {sup 64}Cu radionuclide from waste production, which is collected as solution after extracting {sup 67}Ga and recovering {sup 68}Zn target materials. For the production of radionuclide {sup 67}Ga, the enriched {sup 68}Zn material electroplated on Cu backing plate is usually exposed to energetic protons. The protons produce {sup 67}Ga including other radionuclides, such as {sup 57}Ni, {sup 57,55}Co, {sup 64,67}Cu by several nuclear reactions. After extracting {sup 67}Ga and recovering {sup 68}Zn through several steps of chemical processes, the residual solution is usually discarded even though it contains other species of radioisotopes. In this study, a simple chemical process having a high separation efficiency of {sup 64}Cu from the waste solution was investigated. With this method, a promising radiotracer as a diagnostic in PET and a therapeutic in radio-immunotherapy, {sup 64}Cu was estimated to be produced as high as 1,200 mCi at EOB within 3 h chemical processing after extraction of {sup 67}Ga and {sup 68}Zn.

  19. Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

    2017-05-15

    Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)

  20. Development of medical guide wire of Cu-Al-Mn-base superelastic alloy with functionally graded characteristics.

    Science.gov (United States)

    Sutou, Yuji; Omori, Toshihiro; Furukawa, Akihisa; Takahashi, Yukinori; Kainuma, Ryosuke; Yamauchi, Kiyoshi; Yamashita, Shuzo; Ishida, Kiyohito

    2004-04-15

    A new type of medical guide wire with functionally graded hardness from the tip to the end was developed with the use of Cu-Al-Mn-based alloys. The superelasticity (SE) of the Cu-Al-Mn-based alloys in the tip is drastically improved by controlling the grain size, whereas the end of the wire is hardened using bainitic transformation by aging at around 200-400 degrees C. Therefore, the tip of the guide wire shows a superelasticity and its end has high stiffness. This guide wire with functionally graded characteristics shows excellent pushability and torquability, superior to that of the Ni-Ti guide wire. Copyright 2004 Wiley Periodicals, Inc.

  1. Biosynthesis of lipids in Chlorella vulgaris Beijer. under the action of Mn2+, Zn2+, Cu2+, and Pb2+

    International Nuclear Information System (INIS)

    Gorda, A.Yi.; Grubyinko, V.V.

    2011-01-01

    We study the influence of Mn 2+ , Zn 2+ , Cu 2+ , and Pb 2+ on the intensity of biosynthesis of lipids in unicellular algae Chlorella vulgaris Beijer. In all cases, there is a general tendency to the accumulation of triacylglycerols, dyacylglycerols, and nonesterified fatty acids, which participate in protecting the cages of algae from an unfavorable action, and to a decrease of the content of phospholipids. For the actions of Zn 2+ , Cu 2+ , and Pb 2+ , 14 C-acetate is maximally included in phospholipids, for the actions of Mn 2+ - in dyacylglycerols, and the synthesis of other classes of lipids is inhibited. The content of chlorophylls a and b grows substantially for the actions of ions of zinc and lead and diminishes for the actions of ions of copper and manganese. We discuss the regulatory role and the toxic influence of ions of metals on the lipid metabolism in chlorella.

  2. Laser surface remelting of a Cu-Al-Ni-Mn shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Romero da Silva, Murillo, E-mail: murilloromero_@hotmail.com [Postgraduate Program in Materials Science and Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil); Gargarella, Piter [Department of Materials Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil); Gustmann, Tobias [IFW Dresden, Institute for Complex Materials, Helmholtzstraße 20, d-01069 Dresden (Germany); Botta Filho, Walter José; Kiminami, Claudio S. [Department of Materials Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil); Eckert, Jürgen [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstraße 12, A-8700 Leoben (Austria); Department Materials Physics, Montanuniversität Leoben, Jahnstraße 12, A-8700 Leoben (Austria); Pauly, Simon [IFW Dresden, Institute for Complex Materials, Helmholtzstraße 20, d-01069 Dresden (Germany); Bolfarini, Claudemiro [Department of Materials Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil)

    2016-04-20

    Cu-based shape memory alloys (SMAs) show better thermal and electrical conductivity, lower cost and are easier to process than traditional Ti-based SMAs, but they exhibit a lower ductility and lower fatigue life. These properties can be improved by decreasing the grain size and reducing microstructural segregations, which may be obtained using laser surface remelting treatments. The aim of the present work was to produce and characterize laser remelted Cu-11.85Al-3.2Ni-3Mn SMA plates. Twelve plates with the dimensions of 50×10×1.5 mm were produced by suction casting in a first step. The surface of the plates was remelted afterwards with a laser beam power of 300 W, hatching of 50% and using three different scanning speeds: 100, 300 and 500 mm/s. The plates were characterized by optical and scanning electron microscopy, X-ray diffraction, differential scanning calorimetry as well as by tensile and microhardness tests. The remelted region showed a T morphology, with average thickness of 52, 29 and 23 µm for the plates remelted with scanning speeds of 100, 300 and 500 mm/s, respectively. In the plates remelted with 100 and 300 mm/s, some pores were found around the center of the track, due to the keyhole instability. The same phase formed in the as-cast sample was obtained in the laser remelted coatings: the monoclinic β′{sub 1} martensitic phase with zig-zag morphology. However, the laser treated samples exhibit lower transformation temperatures than the as-cast sample, due to grain refinement at the surface. They also show an improvement in the mechanical properties, with an increase of up to 162 MPa in fracture stress, up to 2.2% in ductility and up to 20.9 HV in microhardness when compared with the as-cast sample, which makes the laser surface remelting a promising method for improving the mechanical properties of Cu-based SMAs.

  3. The content of Ca, Cu, Fe, Mg and Mn and antioxidant activity of green coffee brews.

    Science.gov (United States)

    Stelmach, Ewelina; Pohl, Pawel; Szymczycha-Madeja, Anna

    2015-09-01

    A simple and fast method of the analysis of green coffee infusions was developed to measure total concentrations of Ca, Cu, Fe, Mg and Mn by high resolution-continuum source flame atomic absorption spectrometry. The precision of the method was within 1-8%, while the accuracy was within -1% to 2%. The method was used to the analysis of infusions of twelve green coffees of different geographical origin. It was found that Ca and Mg were leached the easiest, i.e., on average 75% and 70%, respectively. As compared to the mug coffee preparation, the rate of the extraction of elements was increased when infusions were prepared using dripper or Turkish coffee preparation methods. Additionally, it was established that the antioxidant activity of green coffee infusions prepared using the mug coffee preparation was high, 75% on average, and positively correlated with the total content of phenolic compounds and the concentration of Ca in the brew. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Simultaneous analysis of Zn, Cu, Mn, In, As and Sb in Zinc concentrates by neutron activation

    International Nuclear Information System (INIS)

    Tenorio, F.; Mendoza, P.; Espinosa, R.

    1986-01-01

    A method has been developed for simultaneous analysis by neutronic activation of Zn, Cu, As, Mn, In and Sb in concentrated minerals of Zn. The method is based entirely on the use of instruments as it does not comprise any chemical treatments. Samples and models are submitted to irradiation for 60 minutes in a flux of thermal neutrons of 1.5x10 n/cm 2 s in the reactor RP-0 of IPEN. The induced activities are measured by gamma spectrometry of high resolution using an intrinsic detector of germanium. One measurement is made immediately after the irradiation of 2000s and another 24 hours after the 3600s irradiation. The interference, the reproductibility, and the limits of detection of each element are discussed. The analytic results of 5 zinc concentrates are compared with the ones obtained by atomic absorption showing excellent concordance. The method is particularly adaptable to portable radioisotope sources of neutrons making it possible to use it in sites such as industrial plants

  5. Direct determination of Cu, Mn, Pb, and Zn in beer by thermospray flame furnace atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Nascentes, Clesia C.; Kamogawa, Marcos Y.; Fernandes, Kelly G.; Arruda, Marco A.Z.; Nogueira, Ana Rita A.; Nobrega, Joaquim A.

    2005-01-01

    In this work, thermospray flame furnace atomic absorption spectrometry (TS-FF-AAS) was employed for Cu, Mn, Pb, and Zn determination in beer without any sample digestion. The system was optimized and calibration was based on the analyte addition technique. A sample volume of 300 μl was introduced into the hot Ni tube at a flow-rate of 0.4 ml min -1 using 0.14 mol l -1 nitric acid solution or air as carrier. Different Brazilian beers were directly analyzed after ultrasonic degasification. Results were compared with those obtained by graphite furnace atomic absorption spectrometry (GFAAS). The detection limits obtained for Cu, Mn, Pb, and Zn in aqueous solution were 2.2, 18, 1.6, and 0.9 μg l -1 , respectively. The relative standard deviations varied from 2.7% to 7.3% (n=8) for solutions containing the analytes in the 25-50 μg l -1 range. The concentration ranges obtained for analytes in beer samples were: Cu: 38.0-155 μg l -1 ; Mn: 110-348 μg l -1 , Pb: 13.0-32.9 μg l -1 , and Zn: 52.7-226 μg l -1 . Results obtained by TS-FF-AAS and GFAAS were in agreement at a 95% confidence level. The proposed method is fast and simple, since sample digestion is not required and sensitivity can be improved without using expensive devices. The TS-FF-AAS presented suitable sensitivity for determination of Cu, Mn, Pb, and Zn in the quality control of a brewery

  6. Chelating Schiff base assisted azide-bridged Mn(II), Ni(II) and Cu(II) magnetic coordination polymers.

    Science.gov (United States)

    Bai, Shi-Qiang; Fang, Chen-Jie; He, Zheng; Gao, En-Qing; Yan, Chun-Hua; Hor, T S Andy

    2012-11-21

    Four new Mn(II), Ni(II) and Cu(II) coordination polymers [Mn2(L1)(μ(1,1)-N3)2(μ(1,3)-N3)2]n (1), [Ni(L2)2(μ(1,3)-N3)]n(ClO4)n (2), [Cu(L3)(μ(1,1)-N3)(N3)]n (3) and [Cu(L4)(μ(1,1)-N3)2]n (4) (L1 = N,N′-bis(2-pyridylmethylene)ethane-1,2-diamine, L2 = N-(2-pyridylmethylene)methylamine, L3 = N-(2-pyridylmethylene)-3-pyridylamine, L4 = N-(2-pyridylmethylene)-tbutylamine) have been synthesized and characterized by single-crystal X-ray analysis and magnetic measurements. Complex 1 indicates a stoichiometry-dependent structural change (based on Mn:L1:N3 = 2:1:4 molar ratio) and consists of two-dimensional (2-D) (4,4) net layers, in which Mn(II) centers are co-bridged by single end-to-end (EE), double end-on (EO) azide and chelate-bridging L1 ligands. Complex 2 shows a single EE azide-bridged one-dimensional (1-D) Ni(II) chain. Complexes 3 and 4 indicate single EO and double EO azide-bridged 1-D Cu(II) chains, respectively. Complex 1 exhibits weak ferromagnetism due to its intra-layer spin-canting with T(c) = 20 K. Complex 2 shows an unusual intra-chain ferromagnetic coupling and spin-canting behaviour. Both complexes 3 and 4 exhibit intra-chain antiferromagnetic interactions. Magneto-structural parameters for these related complexes were also discussed.

  7. Free-standing hierarchical α-MnO2@CuO membrane for catalytic filtration degradation of organic pollutants.

    Science.gov (United States)

    Luo, Xinsheng; Liang, Heng; Qu, Fangshu; Ding, An; Cheng, Xiaoxiang; Tang, Chuyang Y; Li, Guibai

    2018-06-01

    Catalytic membrane, due to its compact reactor assembling, high catalytic performance as well as low energy consumption, has proved to be more attractive for wastewater treatment. In this work, a free-standing α-MnO 2 @CuO membrane with hierarchical nanostructures was prepared and evaluated as the catalytic membrane to generate radicals from peroxymonosulfate (PMS) for the oxidative degradation of organic dyes in aqueous solution. Benefiting from the high mass transport efficiency and the hierarchical nanostructures, a superior catalytic activity of the membrane was observed for organic dyes degradation. As a typical organic dye, more than 99% of methylene blue (MB) was degraded within 0.23 s using dead-end filtration cell. The effects of flow rate, PMS concentration and buffer solution on MB degradation were further investigated. Besides MB, the catalytic membrane also showed excellent performance for the removal of other dyes, such as congo red, methyl orange, rhodamine B, acid chrome blue K and malachite green. Moreover, the mechanism study indicated that OH and SO 4 - generated from the interaction between PMS and Mn/Cu species with different oxidation states mainly accounted for the dyes degradation. The catalytic filtration process using α-MnO 2 @CuO catalytic membrane could provide a novel method for wastewater purification with high efficiency and low energy consumption. Copyright © 2018 Elsevier Ltd. All rights reserved.

  8. Correlation between electron work functions of multiphase Cu-8Mn-8Al and de-alloying corrosion

    Science.gov (United States)

    Punburi, P.; Tareelap, N.; Srisukhumbowornchai, N.; Euaruksakul, C.; Yordsri, V.

    2018-05-01

    Low energy electron emission microscopy (LEEM) was used to measure local transition energy that was directly correlated to electron work function (EWF) of multiphase manganese-aluminum bronze alloys. We developed color mapping to distinguish the EWF of multiple phases and clarified that the EWF were in the following order: EWF of α > EWF of β > EWF of κ (EWFα > EWFβ > EWFκ). De-alloying corrosion took place due to the micro-galvanic cell at grain boundaries before it propagated into the β phase that had lower EWF than the α phase. The α phase was a stable phase because it contained high Cu while the β phase contained high Al and Mn. In addition, XRD analysis showed that the texture coefficient of the β phase revealed that almost all of the grains had (2 2 0) orientation, the lowest EWF compared to (1 1 1) and (2 0 0). Furthermore, transmission electron microscopy illustrated that there were fine Cu3Mn2Al precipitates in the Cu2MnAl matrix of the β phase. These precipitates formed micro-galvanic cells which played an important role in accelerating de-alloying corrosion.

  9. Effect of Fe and Co substitution on the martensitic stability and the elastic, electronic, and magnetic properties of Mn2NiGa : Insights from ab initio calculations

    Science.gov (United States)

    Kundu, Ashis; Ghosh, Sheuly; Ghosh, Subhradip

    2017-11-01

    We investigate the effects of Fe and Co substitutions on the phase stability of the martensitic phase and mechanical, electronic, and magnetic properties of the magnetic shape memory system Mn2NiGa by first-principles density functional theory calculations. The evolution of these aspects upon substitution of Fe and Co at different crystallographic sites is investigated by computing the electronic structure, mechanical properties (tetragonal shear constant, Pugh ratio, and Cauchy pressure), and magnetic exchange parameters. We find that the austenite phase of Mn2NiGa gradually stabilizes with increase in concentration of Fe/Co due to the weakening of the minority spin hybridization of Ni and Mn atoms occupying crystallographically equivalent sites. The interplay between relative structural stability and the compositional changes is understood from the variations in the elastic moduli and electronic structures. We find that like in the Ni2MnGa -based systems, the elastic shear modulus C' can be considered as a predictor of composition dependence of martensitic transformation temperature Tm in substituted Mn2NiGa , thus singling it out as the universally acceptable predictor for martensitic transformation in Ni-Mn-Ga compounds over a wide composition range. The magnetic properties of Mn2NiGa are found to be greatly improved by the substitutions due to stronger ferromagnetic interactions in the compounds. The gradually weaker (stronger) Jahn-Teller distortion (covalent bonding) in the minority spin densities of states due to substitutions leads to a half-metallic-like gap in these compounds resulting in materials with high spin polarization when the substitutions are complete. The substitutions at the Ga site result in the two compounds Mn2NiFe and Mn2NiCo with very high magnetic moments and Curie temperatures. Thus, our work indicates that although the substitutions destroy the martensitic transformation and thus the possibility of realization of shape memory

  10. Application of neutron activation analysis to evaluate the health status of equines by means of Cu, Fe, Mn and Zn determinations in their hair

    International Nuclear Information System (INIS)

    Armelin, M.J.A.; Avila, R.L.; Piasentin, R.M.; Saiki, M.

    2001-01-01

    Instrumental neutron activation analysis (INAA) was applied to evaluate the clinical status of equines, belonging to the Military Police of Sao Paulo State, by means of Cu, Fe, Mn and Zn determinations in their hair. Comparison of the results obtained in these analyses with reference values indicated Zn deficiency in the equines, Fe is in the minimum limit and the elements Cu and Mn are within the normal range. (author)

  11. Investigation of a Spinel-forming Cu-Mn Foam as an Oxygen Electrode Contact Material in a Solid Oxide Cell Single Repeating Unit

    DEFF Research Database (Denmark)

    Zielke, Philipp; Wulff, Anders Christian; Sun, Xiufu

    2017-01-01

    and steels. The consequence is a low layer and interface strength. A metallic copper manganese foam, which is oxidized under operation conditions into a conductive Cu1+xMn2–xO4 spinel, is presented in this work as a viable contact solution. The foam has been electrochemically tested in a single repeating...... and moderate degradation rates, the CuMn foam presented itself as an interesting cathode contact solution....

  12. Concentrations of Zn, Mn, Cu and Cd in different tissues of perch (Perca fluviatilis) and in perch intestinal parasite (Acanthocephalus lucii) from the stream near Prague (Czech Republic)

    Energy Technology Data Exchange (ETDEWEB)

    Jankovska, Ivana, E-mail: jankovska@af.czu.cz [Department of Zoology and Fisheries, Faculty of Agrobiology, Food and Natural Resources, Czech University of Life Sciences, 165 21 Prague 6 - Suchdol (Czech Republic); Miholova, Daniela [Department of Chemistry, Faculty of Agrobiology, Food and Natural Resources, Czech University of Life Sciences, 165 21 Prague 6 - Suchdol (Czech Republic); Lukesova, Daniela [Department of Animal Science and Food Processing in Tropics and Subtropics, Institute of Tropics and Subtropics, Czech University of Life Sciences, 165 21 Prague 6 - Suchdol (Czech Republic); Kalous, Lukas; Valek, Petr; Romocusky, Stepan; Vadlejch, Jaroslav; Petrtyl, Miloslav; Langrova, Iva; Cadkova, Zuzana [Department of Zoology and Fisheries, Faculty of Agrobiology, Food and Natural Resources, Czech University of Life Sciences, 165 21 Prague 6 - Suchdol (Czech Republic)

    2012-01-15

    We monitored concentrations of Cd, Cu, Mn and Zn in acantocephalan parasites (Acanthocephalus lucii) and its final host (Perca fluviatilis). The concentrations in parasites were found to be significantly higher than those found in the muscle, gonads and liver of fish host. The bioaccumulation factor values were 194, 24.4, 2.2 and 4.7 for Cd, Cu, Mn and Zn, respectively. This suggests a benefit for the host due to the high accumulation of toxic cadmium.

  13. First-principles study of direct and narrow band gap semiconducting β-CuGaO2

    International Nuclear Information System (INIS)

    Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; Ho, Kai-Ming

    2015-01-01

    Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO 2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO 2 phase. Our calculations show that the β-CuGaO 2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point of Brillouin zone. The optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment. (paper)

  14. Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    De Ranieri, E.; Rushforth, A.W.; Výborný, Karel; Rana, U.; Ahmad, E.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Irvine, A.C.; Wunderlich, J.; Jungwirth, Tomáš

    2008-01-01

    Roč. 10, č. 6 (2008), 065003/1-065003/19 ISSN 1367-2630 R&D Projects: GA MŠk LC510; GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall effect * Keldysh formalism * Rashba system Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.440, year: 2008

  15. Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Kub, Jiří; Máca, František; Mašek, Jan; Pacherová, Oliva; Rushforth, A.W.; Gallagher, B. L.; Campion, R. P.; Novák, Vít; Jungwirth, Tomáš

    2011-01-01

    Roč. 83, č. 23 (2011), , , "235324-1"-"235324-7" ISSN 1098-0121 R&D Projects: GA AV ČR IAA100100912; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : ferrmagnetic semiconductor * crystal structure * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011 http://prb.aps.org/abstract/PRB/v83/i23/e235324

  16. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  17. Interplay of phase sequence and electronic structure in the modulated martensites of Mn2NiGa from first-principles calculations

    Science.gov (United States)

    Kundu, Ashis; Gruner, Markus E.; Siewert, Mario; Hucht, Alfred; Entel, Peter; Ghosh, Subhradip

    2017-08-01

    We investigate the relative stability, structural properties, and electronic structure of various modulated martensites of the magnetic shape memory alloy Mn2NiGa by means of density functional theory. We observe that the instability in the high-temperature cubic structure first drives the system to a structure where modulation shuffles with a period of six atomic planes are taken into account. The driving mechanism for this instability is found to be the nesting of the minority band Fermi surface, in a similar way to that established for the prototype system Ni2MnGa . In agreement with experiments, we find 14M modulated structures with orthorhombic and monoclinic symmetries having energies lower than other modulated phases with the same symmetry. In addition, we also find energetically favorable 10M modulated structures which have not been observed experimentally for this system yet. The relative stability of various martensites is explained in terms of changes in the electronic structures near the Fermi level, affected mostly by the hybridization of Ni and Mn states. Our results indicate that the maximum achievable magnetic field-induced strain in Mn2NiGa would be larger than in Ni2MnGa . However, the energy costs for creating nanoscale adaptive twin boundaries are found to be one order of magnitude higher than that in Ni2MnGa .

  18. Magnet properties of Mn{sub 70}Ga{sub 30} prepared by cold rolling and magnetic field annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ener, Semih, E-mail: ener@fm.tu-darmstadt.de [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Skokov, Konstantin P. [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Karpenkov, Dmitriy Yu. [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Faculty of Physics, Tver State University, 170100 Tver (Russian Federation); Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Kuz' min, Michael D. [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gutfleisch, Oliver [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Fraunhofer IWKS, Project Group for Material Cycles and Resource Strategy, 63457 Hanau (Germany)

    2015-05-15

    The remanence and coercivity of arc melted Mn{sub 70}Ga{sub 30} can be substantially improved by cold rolling. For best performance the rolled material should be annealed at T=730 K in the presence of a magnetic field of 1 T. The so-obtained magnet has a remanence of 0.239 T and a coercivity of 1.24 T at room temperature. The underlying reason for the high coercivity and remanence is the increase of the content of a metastable ferrimagnetic D0{sub 22} phase at the expense of the normally stable anti-ferromagnetic D0{sub 19}. Magnetic field significantly increases the nucleation rate of the ferromagnetic D0{sub 22} phase that leads to grain size refinement and as a consequence of improving remanence and coercive field. - Highlights: • Alternative synthesis method for D0{sub 22} phase formation in Mn–Ga is developed. • Effect of cold rolling and annealing on magnetic properties of Mn{sub 70}Ga{sub 30} is examined. • Small magnetic fields are sufficient to accelerate nucleation of the D0{sub 22} phase.

  19. Structure, magnetism, and electron-transport properties of Mn{sub 2}CrGa-based nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenyong; Skomski, Ralph; Sellmyer, David J. [Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588 (United States); Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588 (United States); Kharel, Parashu [Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588 (United States); Department of Physics, South Dakota State University, Brookings, SD 57007 (United States); Valloppilly, Shah; Li, Xingzhong [Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588 (United States)

    2016-05-15

    Mn{sub 2}CrGa in the disordered cubic structure has been synthesized using rapid quenching and subsequent annealing. The cubic phase transforms to a stable tetragonal phase when a fraction of Cr or Ga is replaced by Pt or Al, respectively. All samples are ferrimagnetic with high Curie temperatures (T{sub c}); Mn{sub 2}CrGa exhibits the highest T{sub c} of about 813 K. The tetragonal samples have appreciable values of magnetocrystalline anisotropy energy, which leads to an increase in coercivity (H{sub c}) that approaches about 10 kOe in the Pt-doped sample. The H{sub c} linearly increases with a decrease of temperature, concomitant with the anisotropy change with temperature. All samples are metallic and show negative magnetoresistance with room-temperature resistivities on the order of 1 mΩcm. The magnetic properties including high T{sub c} and low magnetic moment suggest that these tetragonal materials have potential for spin-transfer-torque-based devices.

  20. Microstructural characterization of radio frequency magnetron sputter-deposited Ga sub 2 O sub 3 :Mn phosphor thin films

    CERN Document Server

    Kim, J H

    2002-01-01

    Ga sub 2 O sub 3 :Mn phosphor thin films have been prepared by radio frequency (rf) magnetron sputtering of a 2 mol % Mn-doped Ga sub 2 O sub 3 target in an oxygen-argon mixture atmosphere. The deposition rate of the films decreased from 14 to 12 Aa/min when the working gas pressure decreased from 30 to 2 mTorr, while the O/Ga ratio of approx 1.5 did not systematically depend on the pressure. Films deposited at higher working gas pressure had a porous columnar structure containing a large void, typical of zone 1 growth, while films produced at lower pressure had relatively smooth surfaces with a dense structure, typical of zone T growth. The results obtained are consistent with energetic particle bombardment of the depositing films promoting surface adatom mobility at lower working gas pressure. Films deposited at working gas pressures>=15 mTorr showed a random orientation after a postdeposition anneal at 1000 deg. C. Below 15 mTorr, annealed films were strongly textured with the (111) and (020) planes parall...

  1. Teores de Fe, Mn, Zn, Cu, Ni E Co em solos de referência de Pernambuco

    Directory of Open Access Journals (Sweden)

    Caroline Miranda Biondi

    2011-06-01

    Full Text Available Metais pesados formam um grupo de elementos com particularidades relevantes e de ocorrência natural no ambiente, como elementos acessórios na constituição de rochas. Esses elementos, apesar de associados à toxidez, exigem tratamento diferenciado em relação aos xenobióticos, uma vez que diversos metais possuem essencialidade (Fe, Mn, Cu, Zn e Ni e benefício (Co comprovados para as plantas. Nesse contexto, o objetivo deste trabalho foi determinar os teores naturais dos metais Fe, Mn, Zn, Ni, Cu e Co nos solos de referência de Pernambuco. Foram coletadas amostras de solo nas três regiões fisiográficas (Zona da Mata, Agreste e Sertão, dos dois primeiros horizontes dos 35 solos de referência do Estado de Pernambuco. A digestão das amostras baseou-se no método 3051A (USEPA, 1998, e a determinação foi efetuada em ICP-OES. Correlações significativas foram estabelecidas entre os metais e entre estes e a fração argila do solo, em ambos os horizontes, indicando a associação comum da maioria dos metais com solos mais argilosos. A maioria dos solos apresentou teores de Fe, Mn, Zn, Cu, Ni e Co menores que os de solos de outras regiões do País, com litologia mais máfica, o que corrobora o fato de que os teores desses elementos são mais diretamente relacionados aos minerais Fe-magnesianos. Os resultados indicam baixo potencial dos solos de Pernambuco em liberar Cu, Co e Ni para plantas, enquanto deficiências de Zn, Fe e Mn são menos prováveis. Os teores naturais de Fe, Mn, Zn, Cu, Ni e Co determinados podem ser utilizados como base para definição dos Valores de Referência de Qualidade para os solos de Pernambuco, de acordo com o preconizado pela legislação nacional.

  2. Role of ion beam excitations on quasi one-dimensional magnetic system of Mn-doped LiCuVO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Abhishek [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Dwivedi, G.D.; Kumar, Shiv [Departments of Physics, Banaras Hindu University, Varanasi 221005 (India); Shahi, P.; Shukla, K.K. [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Ghosh, A.K. [Departments of Physics, Banaras Hindu University, Varanasi 221005 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Center, ArunaAsaf Ali Marg, New Delhi 110067 (India); Singh, R.K. [Departments of Physics, Banaras Hindu University, Varanasi 221005 (India); Nigam, A.K. [Department of CMP & MS, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2015-07-01

    Induction of short range ferromagnetic ordering has been observed in the quasi one dimensional antiferromagnetic LiCuVO{sub 4} system with doping of Mn in the octahedral (Cu) site. Though, magnetic ordering is not stable enough as further increase of Mn-concentration, magnetic ordering gets deteriorated. This might be the case that Mn{sup 2+} ions, with strong magnetic moment as compared to Cu{sup 2+} ions, enhance the ferromagnetic coupling between the nearest neighbor atoms of quasi-one-dimensional magnetic LiCuVO{sub 4} system. Ferromagnetic ordering in LiCu{sub 0.95}Mn{sub 0.05}VO{sub 4} system also degraded after high energy ion beam excitation which creates defects and may disturb the short range ferromagnetic ordering in its near locality but it does not have much effect on the long range antiferromagnetic ordering. Irradiation causes no change in Raman modes of LiCu{sub 0.95}Mn{sub 0.05}VO{sub 4} system, while it produces some new vibrational modes in intermediate and high frequency region of LiCu{sub 0.9}Mn{sub 0.1}VO{sub 4} system. Above results have been understood based on competitions between ferromagnetic nearest neighbor (NN) coupling and antiferromagnetic next nearest neighbor (NNN) coupling in CuO{sub 2} chain. - Highlights: • Quasi 1-D magnetic systems LiCu{sub 1-x}Mn{sub x}VO{sub 4} (x = 0.00, 0.05 & 0.10) have been prepared. • Doping of Mn induces short range ferromagnetic ordering in the system. • High-energy ion beam excitations degrade ferromagnetic ordering in Mn doped LiCuVO{sub 4}. • Irradiations decay short range FM order but has no effect on long range AFM order. • Irradiation leads to few new vibrational modes in LiCu{sub 0.9}Mn{sub 0.1}VO{sub 4} system.

  3. In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs (111) B hybrid structure

    Science.gov (United States)

    Islam, Md. Earul; Akabori, Masashi

    2018-03-01

    We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs (111) B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [ 2 ̅ 110 ] and [ 0 1 ̅ 10 ] of hexagonal MnAs i.e. [ 1 ̅ 10 ] and [ 11 2 ̅ ] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [ 1 ̅ 10 ] and [ 11 2 ̅ ] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [ 11 2 ̅ ] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.

  4. Ab initio prediction of stable nanotwin double layers and 4O structure in Ni.sub.2./sub.MnGa

    Czech Academy of Sciences Publication Activity Database

    Zelený, M.; Straka, Ladislav; Sozinov, A.; Heczko, Oleg

    2016-01-01

    Roč. 94, č. 22 (2016), s. 1-6, č. článku 224108. ISSN 2469-9950 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : ab initio * magnetic shape memory * martensite * modulation * Ni-Mn-Ga Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  5. The Influence of Cu Addition on Dispersoid Formation and Mechanical Properties of Al-Mn-Mg 3004 Alloy

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2018-03-01

    Full Text Available The effect of Cu addition on dispersoid precipitation, mechanical properties and creep resistance was investigated in an Al-Mn-Mg 3004 alloy. The addition of Cu promoted dispersoid precipitation by increasing the number density and decreasing the size of dispersoids. Metastable β′-Mg2Si and Q-AlCuMgSi precipitates were observed during the heating process and both could provide favorable nucleation sites for dispersoid precipitation. The addition of Cu improved the thermal stability of dispersoids during a long-term thermal holding at 350 °C for 500 h. Results of mechanical testing show that the addition of Cu remarkably improved the hardness at room temperature, as well as the yield strength and creep resistance at 300 °C, which was mainly attributed to dispersoid strengthening and Cu solid solution strengthening. The yield strength contribution at 300 °C was quantitatively evaluated based on the dispersoid, solid solution and matrix contributions. It was confirmed that dispersoid strengthening is the main strengthening mechanism in the experimental alloys.

  6. Effect of Mn doping on the electronic structure of ZnGa{sub 2}O{sub 4} with spinel-type structure

    Energy Technology Data Exchange (ETDEWEB)

    Nonaka, Moriyasu [Department of Earth Resources Engineering, Kyushu Univ., Fukuoka (Japan); Tanizaki, Takumi; Matsushima, Shigenori [Department of Materials Chemistry, Kitakyushu National College of Technology, Kitakyushu, Fukuoka (Japan); Mizuno, Masataka [Department of Materials Science and Engineering, Osaka Univ., Osaka (Japan); Xu, Chao-Nan [National Institute of Advanced Industrial Science and Technology (AIST), Fukuoka (Japan)

    2001-07-01

    The electronic structures of ZnGa{sub 2}O{sub 4} and ZnGa{sub 2}O{sub 4}:Mn are calculated by the discrete variational X{alpha} method on model clusters. For ZnGa{sub 2}O{sub 4}, it is found that Zn-O and Ga-O bondings are not perfectly ionic but partially covalent. When a central Zn atom of the cluster is replaced with a Mn atom, the new energy states originating from Mn 3d orbitals appear in the energy gap. The energy levels of t{sub 2} up-spin states and e downspin states seem to relate to the green emission. (author)

  7. In situ neutron diffraction study of twin reorientation and pseudoplastic strain in Ni-Mn-Ga single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, Alexandru Dan [ORNL

    2011-01-01

    Twin variant reorientation in single-crystal Ni-Mn-Ga during quasi-static mechanical compression was studied using in situ neutron diffraction. The volume fraction of reoriented twin variants for different stress amplitudes were obtained from the changes in integrated intensities of high-order neutron diffraction peaks. It is shown that, during compressive loading, {approx}85% of the twins were reoriented parallel to the loading direction resulting in a maximum pseudoplasticstrain of {approx}5.5%, which is in agreement with measured macroscopic strain.

  8. In situ neutron diffraction study of twin reorientation and pseudoplastic strain in Ni-Mn-Ga single crystals

    International Nuclear Information System (INIS)

    Pramanick, A.; An, K.; Stoica, A.D.; Wang, X.-L.

    2011-01-01

    Twin variant reorientation in single-crystal Ni-Mn-Ga during quasi-static mechanical compression was studied using in situ neutron diffraction. The volume fraction of reoriented twin variants for different stress amplitudes were obtained from the changes in integrated intensities of high-order neutron diffraction peaks. It is shown that, during compressive loading, ∼85% of the twins were reoriented parallel to the loading direction resulting in a maximum pseudoplastic strain of ∼5.5%, which is in agreement with measured macroscopic strain.

  9. Influence of γ-ray radiation on the electrical properties of CuGaSe2

    International Nuclear Information System (INIS)

    Gasimov, I.K.; Kerimova, T.G.; Mamedova, I.A.

    2002-01-01

    The ternary A 1 B 3 C 3 6 compounds are perspective materials for creation on their base the high effective transformers of solar energy, photodetectors with the high efficiency. In this paper the results of the investigation of the short-circuit current dependence on the wavelength and influence of the γ-ray radiation on the electrical properties of the p-type CuGaSe 2 crystals have been reported. The (Co 60 ) with the quantum energy of 1.25 MeV was used as a g amma - ray source. The CnGaSe 2 crystals were obtained by the chemical transport reactions. Iodine crystalline was used as a transporter. The lattice parameters were determined by the X-ray method as a=5.607 Angstroms, c=10.99 Angstroms, c/a=l.96. The In-Ga eutectic contacts were put on the nature surfaces of the films for the earring out the measurements. The films with the ρ=10 2 -10 7 Ω·cm resistivity were investigated. The films one can divide into two group: low resistance ρ=10 2 -10 3 Ω·cm and high resistance ρ=10 5 -10 7 Ω·cm films. The inverse of the current is observed in the I ns ∼f(λ) short-circuit current dependence with the wavelength in the low resistance films. The inverse is not observed in the high resistance ones. The measurement of the resistivity of the CuGaSe 2 films radiated by γ-ray radiation were carried out at 77 K. The resistivity of the low-resistance films under the radiation up to 50 p/s changes slowly, then increases sharply and achieves the value ρ=10 6 Ω·cm. Beginning from 300 p/s the resistivity decreases. Further increasing of the power doesn't influence on the resistivity. The resistivity of the high resistance films decreases up to 10 6 Ω·cm at 100 p/s with the increasing of the dose of γ-ray radiation and then doesn't change with the radiation dose. The investigation of the temperature dependence of the resistivity in the low resistance films previously radiated under the γ-ray radiation showed that increasing of the γ-ray radiation doesn't almost

  10. Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors

    International Nuclear Information System (INIS)

    Oliva, F.; Broussillou, C.; Annibaliano, M.; Frederich, N.; Grand, P.P.; Roussy, A.; Collot, P.; Bodnar, S.

    2013-01-01

    The development of low cost industrial processes is one of the key issues to make Cu(In,Ga)Se 2 based solar cells reach grid-parity. Such a process is found by using a two-step technology based on the sequential electro-deposition of a metallic precursor followed by a rapid annealing. Three types of metallic precursors (two-compound systems as copper–indium, copper–gallium and three-compound system as copper–indium–gallium) have been electrodeposited on a molybdenum sputtered soda lime glass and alloyed through a low annealing temperature. Then a selenium film has been evaporated and the stack has been annealed at high temperature in a rapid thermal processing furnace. A one-step heating profile has been used from room temperature to 550 °C in less than 1 min. Samples for which the heating was stopped after different annealing times have been characterized using several techniques: X-ray fluorescence spectrometry for elemental composition, X-ray diffraction and Raman spectroscopy for phase composition, scanning electron microscopy for structural analysis and glow discharge optical emission spectroscopy for diffusion study. Preferential formation reactions of the two-compound based metallic precursors have been studied and compared with the copper–indium–gallium metallic precursor used in a two step process. A gallium free system reacts faster than a gallium-based system and presents well-formed ternary compound after a standard selenization. However, the incorporation of gallium can be improved through a longer annealing time or a higher annealing temperature. - Highlights: ► We studied formation mechanisms of Cu(In,Ga)Se 2 based solar cells. ► Electrodeposited metallic precursors are selenized in a two step process. ► Three systems were analyzed: Cu–In + Se, Cu–Ga + Se and Cu–In–Ga + Se systems. ► A longer annealing time improves the incorporation of gallium. ► A higher annealing temperature improves the incorporation of gallium

  11. Ab-initio study of (Ga,Cr)N and (Ga,Mn)N DMSs: under hydrostatic pressure

    Science.gov (United States)

    Rani, Anita; Kumar, Ranjan

    2018-03-01

    The influence of hydrostatic pressure between 0-100 GPa on structural, electronic and magnetic properties of CrxGa1-xN and MnxGa1-xN (x = 0.25) diluted magnetic semiconductors has been studied. The calculations have been performed using DFT as implemented in code SIESTA. LDA + U as exchange-correlation (XC) potential have been used to study the parameters. Under external pressure, shifting in both valence band and conduction band energy levels from their actual positions has been observed, which lead to modification of electronic properties. Also, N0 α, s-d exchange constant and p-d exchange constants, N0 β have been calculated at different pressures. Both the compounds show half metallic nature at studied pressure range.

  12. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES.

    Science.gov (United States)

    Bouravleuv, A D; Lev, L L; Piamonteze, C; Wang, X; Schmitt, T; Khrebtov, A I; Samsonenko, Yu B; Kanski, J; Cirlin, G E; Strocov, V N

    2016-10-21

    Electronic structure of a molecular beam epitaxy-grown system of (In,Mn)As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in ∼2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In,Mn)As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In,Mn)As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In,Mn)As QDs to the prototype (In,Mn)As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In,Mn)As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In,Mn)As based systems.

  13. L'etude de l'InP et du GaP suite a l'implantation ionique de Mn et a un recuit thermique

    Science.gov (United States)

    Bucsa, Ioan Gigel

    Cette these est dediee a l'etude des materiaux InMnP et GaMnP fabriques par implantation ionique et recuit thermique. Plus precisement nous avons investigue la possibilite de former par implantation ionique des materiaux homogenes (alliages) de InMnP et GaMnP contenant de 1 a 5 % atomiques de Mn qui seraient en etat ferromagnetique, pour des possibles applications dans la spintronique. Dans un premier chapitre introductif nous donnons les motivations de cette recherche et faisons une revue de la litterature sur ce sujet. Le deuxieme chapitre decrit les principes de l'implantation ionique, qui est la technique utilisee pour la fabrication des echantillons. Les effets de l'energie, fluence et direction du faisceau ionique sur le profil d'implantation et la formation des dommages seront mis en evidence. Aussi dans ce chapitre nous allons trouver des informations sur les substrats utilises pour l'implantation. Les techniques experimentales utilisees pour la caracterisation structurale, chimique et magnetique des echantillons, ainsi que leurs limitations sont presentees dans le troisieme chapitre. Quelques principes theoriques du magnetisme necessaires pour la comprehension des mesures magnetiques se retrouvent dans le chapitre 4. Le cinquieme chapitre est dedie a l'etude de la morphologie et des proprietes magnetiques des substrats utilises pour implantation et le sixieme chapitre, a l'etude des echantillons implantes au Mn sans avoir subi un recuit thermique. Notamment nous allons voir dans ce chapitre que l'implantation de Mn a plus que 1016 ions/cm 2 amorphise la partie implantee du materiau et le Mn implante se dispose en profondeur sur un profil gaussien. De point de vue magnetique les atomes implantes se trouvent dans un etat paramagnetique entre 5 et 300 K ayant le spin 5/2. Dans le chapitre 7 nous presentons les proprietes des echantillons recuits a basses temperatures. Nous allons voir que dans ces echantillons la couche implantee est polycristalline et les

  14. Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni2 Alloy Shunts

    Directory of Open Access Journals (Sweden)

    Siti Nabilah Misti

    2017-07-01

    Full Text Available This paper studies the effect of abrasive trimming on the electrical properties of Cu86Mn12Ni2 Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR, high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part.

  15. Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni₂ Alloy Shunts.

    Science.gov (United States)

    Misti, Siti Nabilah; Birkett, Martin; Penlington, Roger; Bell, David

    2017-07-29

    This paper studies the effect of abrasive trimming on the electrical properties of Cu 86 Mn 12 Ni₂ Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR), high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part.

  16. Quenching interface recombination in wide bandgap Cu(In,Ga)Se{sub 2} by potassium treatment

    Energy Technology Data Exchange (ETDEWEB)

    Zahedi-Azad, Setareh; Scheer, Roland [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06120 Halle (Saale) (Germany)

    2017-06-15

    In this contribution, we report on the increase of the output voltage for wide bandgap (E{sub g} > 1.4 eV) Cu(In,Ga)Se{sub 2} films by doping potassium via post-deposition treatment of the grown absorber layer. Also the carrier collection is improved by Potassium fluoride treatment (KF). The difference between KF-treated and untreated samples is investigated using J-V parameters, external quantum efficiency (EQE), and V{sub OC}(t) transients under red illumination. Statistics shows an increased activation energy of saturation current and a trend toward a positive dV{sub OC}/dt. Thus the increased V{sub OC} can be explained through partially quenched recombination at the interface of buffer/absorber layer. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Boltzmann theory of engineered anisotropic magnetoresistance in (Ga, Mn)As

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Abolfath, M.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2002-01-01

    Roč. 81, č. 21 (2002), s. 4029-4031 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

  18. Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Kaestner, B.; Irvine, A.C.; Shick, Alexander; Stone, N.; Wang, K. Y.; Rana, U.; Giddings, A.D.; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2006-01-01

    Roč. 97, č. 7 (2006), 077201/1-077201/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510 Grant - others:EPSRC(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.072, year: 2006

  19. Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Olejník, Kamil; Owen, M.H.S.; Novák, Vít; Mašek, Jan; Irvine, A.C.; Wunderlich, J.; Jungwirth, Tomáš

    2008-01-01

    Roč. 78, č. 5 (2008), 054403/1-054403/4 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GEFON/06/E001 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * Curie temperature * field-effect transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  20. Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Máca, František; Kudrnovský, Josef; Makarovský, O.; Eaves, L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Foxon, C. T.; Gallagher, B. L.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 105, č. 22 (2010), 227202/1-227202/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520 Keywords : gallium arsenide * semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  1. Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Novák, Vít; Olejník, Kamil; Wunderlich, J.; Cukr, Miroslav; Výborný, Karel; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Sinova, J.; Jungwirth, Tomáš

    2008-01-01

    Roč. 101, č. 7 (2008), 077201/1-077201/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GEFON/06/E001 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetic semiconductors * critical behaviour * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  2. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Science.gov (United States)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  3. Structure, morphology and optical-luminescence investigations of spinel ZnGa2O4 ceramics co-doped with Mn2+ and Eu3+ ions

    Science.gov (United States)

    Kravets, O.; Zaremba, O.; Shpotyuk, Ya.; Luchechko, A.; Szmuc, K.; Cebulski, J.; Ingram, A.; Shpotyuk, O.

    2018-02-01

    The polycrystalline zinc gallate ZnGa2O4: Mn2+ and ZnGa2O4: Mn2+, Eu3+ samples have been synthesized via high-temperature solid-state reaction ceramic technique. The obtained ceramics have been characterized employing the methods of X-ray diffraction analysis, transmission electron microscopy, energy-dispersive X-ray spectroscopy, positron annihilation lifetime spectroscopy and optical-luminescent spectroscopy. The XRD analysis testified in favor of successful formation of spinel structure in the prepared samples with small amount of additional phase observed in the ZnGa2O4: Mn2+, Eu3+ ceramics. The grains of irregular shape with a homogeneous distribution of Eu3+ ions in a volume were identified with TEM technique. The band gap of ZnGa2O4: Mn2+ spinel was estimated from optical absorption spectra in UV-Vis range. The characteristic bands related to electronic transitions of Mn2+ and Eu3+ ions were found in optical absorption and excitation spectra. The photoluminescence emission spectra exhibited matrix luminescence along with emission band of Mn2+ ions and narrow lines of Eu3+ ions in blue, green and red spectral region, respectively. The intensity ratio of Eu3+ emission lines confirms the high asymmetry around Eu3+ ions. These findings correlate well with results of positron annihilation lifetime spectroscopy showing intense reduction of positron trapping rate deeply in ceramics grains due to Eu3+ ions penetration.

  4. Ion beam analysis of Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laboratories, Nuclear Science and Instrumentation Laboratory, A-2444 Seibersdorf (Austria); Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153 10 Aghia Paraskevi, Athens Greece (Greece); Streeck, C. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Radovic, I. Bogdanovic [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Kaufmann, C.; Rissom, T. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

    2015-11-30

    Graphical abstract: - Highlights: • Elemental depth profiles for various CIGS thin films were quantitatively determined. • Pure absorbers, complete cell and bilayer solar cells were prepared and analyzed. • Synergistic PIXE and RBS analysis of thin solar cells using alpha beam particles. • High energy alpha beam resolved completely the Indium depth profile. • Synchrotron based Reference Free GIXRF quantitative analysis validated IBA results. - Abstract: The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se{sub 2} thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.

  5. Ion beam analysis of Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Karydas, A. G.; Streeck, C.; Radovic, I. Bogdanovic; Kaufmann, C.; Rissom, T.; Beckhoff, B.; Jaksic, M.; Barradas, N. P.

    2015-11-01

    The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se2 thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.

  6. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, Miroslav; Mikulics, M.; Sofer, Z.

    2015-01-01

    Roč. 164, Aug (2015), 108-114 ISSN 0254-0584 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * menitrides * nanostructures * magnetic properties * chemical synthesis * semiconductors Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

  7. Microstructure, thermodynamics and compressive properties of AlCoCrCuMn-x (x=Fe, Ti) high-entropy alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhaoqin, E-mail: wzqpapers@126.com [School of Railway Technology, Lanzhou Jiaotong University, Lanzhou 730010 (China); Wang, Xiaorong [School of Mechatronic Engineering, Lanzhou Jiaotong University, Lanzhou 730010 (China); Yue, Hui [School of Railway Technology, Lanzhou Jiaotong University, Lanzhou 730010 (China); Shi, Guangtian; Wang, Shunhua [School of Mechatronic Engineering, Lanzhou Jiaotong University, Lanzhou 730010 (China)

    2015-03-11

    Two equiatomic high-entropy alloys (HEAs), AlCoCrCuMnFe and AlCoCrCuMnTi, were produced by vacuum arc melting. Their microstructure, thermodynamics and mechanical properties were investigated in as-cast condition. The AlCoCrCuMnFe alloy is comprised of a face centered cubic (FCC) phase and two body centered cubic (BCC) phases, while the AlCoCrCuMnTi alloy consists of the intermetallics-base solid solution (AlCu{sub 2}Mn-like phase) besides a FCC phase and two BCC phases. Through analyzing the thermodynamics of equiatomic multicomponent alloys, two parameters, k{sub n} and φ, were proposed. The parameter k{sub n} is a function of n (n – the number of the components in an alloy system), while φ is defined as a parameter of T{sub sum} over |H{sub sum}| (T{sub sum} – the sum of every elemental melting point in an alloy system, |H{sub sum}| – the sum of mixing enthalpies of different pairs of alloying elements). φ≥1.1/k{sub n} is equivalent to Ω≥1.1 proposed by Yang to predict high entropy stabilized solid solution in equiatomic multicomponent alloys and more convenient to calculate. Compressive properties of the two HEAs together with their hardness have been investigated. Comparing to AlCoCrCuMnFe alloy, AlCoCrCuMnTi alloy has higher Vickers hardness, yield strength and compressive strength, but lower ultimate strain.

  8. COMPARISON OF DIFFERENT EXTRACTION METHODS REPRESENTING AVAILABLE AND TOTAL CONCENTRATIONS OF Cd, Cu, Fe, Mn and Zn IN SOIL

    Directory of Open Access Journals (Sweden)

    Vladimir Ivezić

    2013-06-01

    Full Text Available Various extraction methods are used to predict plant uptake of trace metals. Most commonly it is total concentration that is used for risk assessment and evaluation of trace metal availability. However, recent studies showed that total concentration is a poor indicator of availability while concentrations in soil solution show good correlation with plant uptake. Present study was conducted on magricultural soils with low levels of trace metals where 45 soil samples were collected from different soil types. The main objective was to compare four different extraction methods and examine how total and reactive (EDTA trace metal concentrations correlate ,with soil solution concentration (in this study determined by water extraction. The samples were analyzed by four extraction methods: strong acid extraction (ultra-pure HNO3 extraction and aqua regia, weak acid extraction by EDTA and the most available fraction, fraction in soil solution, were represented by water extraction (weakest extractant. Five elements were investigated (Cd, Cu, Fe, Mn and Zn. Water extraction significantly correlated with EDTA extraction for Cu, Fe and Mn, while total extraction (HNO3 extraction and aqua regia correlated significantly with water extraction only for Cu. No correlation between water extraction and total extraction confirmed poor role of total concentration as an indicator of availability. EDTA extraction can be used to represent reactive pool of trace metals in soil but it should be also taken with caution when using it to describe available fraction.

  9. Effect of titanium on structure and martensitic transformation in rapidly solidified Cu-Al-Ni-Mn-Ti alloys

    International Nuclear Information System (INIS)

    Dutkiewicz, J.; Czeppe, T.; Morgiel, J.

    1999-01-01

    Alloys of composition Cu-(11.8-13.5)%Al-(3.2-4)%Ni-(2-3)%Mn and 0-1%Ti (wt.%) were cast using the melt spinning method in He atmosphere. Ribbons obtained in this process showed grains from 0.5 to 30 μm depending on the type of alloy and wheel speed. Bulk alloys and most of the ribbons contained mixed 18R and 2H type martensite at room temperature (RT). Some ribbons, crystallizing at the highest cooling rate, retained also β phase due to a drop of M s below RT. The M s temperatures in ribbons were strongly lowered with increasing wheel speed controlling the solidification rate. This drop of M s shows a linear relationship with d -1/2 , where d is grain size. The strongest decrease of M s and smallest grains were found in the ribbons containing titanium due to its grain refinement effect. The cubic Ti rich precipitates, present in both Cu-Al-Ni-Ti and Cu-Al-Ni-Mn-Ti bulk, were dispersed in ribbons cast with intermediate cooling rates of up to 26 m s -1 , but suppressed for higher cooling rates. The transformation hysteresis loop was much broader in ribbons due to presence of coherent Ti rich precipitates and differences in grain size which is particularly important in the ultra small grain size range. (orig.)

  10. Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2 solar cells

    International Nuclear Information System (INIS)

    Raghuwanshi, M.; Cadel, E.; Pareige, P.; Duguay, S.; Couzinie-Devy, F.; Arzel, L.; Barreau, N.

    2014-01-01

    The reason why so-called wide-bandgap CuIn 1−x Ga x Se 2 (CIGSe with x > 0.4) based solar cells show hindered performance compared with theoretical expectations is still a matter of debate. In the present Letter, atom probe tomography studies of CuIn 1−x Ga x Se 2 polycrystalline thin films with x varying from 0 to 1 are reported. These investigations confirm that the grain boundaries (GBs) of low gallium containing (x   0.8) are Cu-enriched compared with GI. For intermediate gallium contents (0.4 < x < 0.8), both types of GBs are detected. This threshold value of 0.4 surprisingly coincides with solar cells output voltage deviation from theoretical expectations, which suggests modifications of GBs properties could participate in the loss of photovoltaic performance.

  11. Structure, site-specific magnetism, and magnetotransport properties of epitaxial D 022 -structure Mn2FexGa thin films

    Science.gov (United States)

    Betto, Davide; Lau, Yong-Chang; Borisov, Kiril; Kummer, Kurt; Brookes, N. B.; Stamenov, Plamen; Coey, J. M. D.; Rode, Karsten

    2017-07-01

    Ferrimagnetic Mn2FexGa (0.26 ≤x ≤1.12 ) thin films have been characterized by x-ray diffraction, magnetometry, x-ray absorption spectroscopy, x-ray magnetic circular dichroism, and Mössbauer spectroscopy with the aim of determining the structure and site-specific magnetism of this tetragonal, D 022 -structure Heusler compound. High-quality epitaxial films with low root-mean-square surface roughness (˜0.6 nm) are grown by magnetron cosputtering. The tetragonal distortion induces strong perpendicular magnetic anisotropy along the c axis with a typical coercive field μ0H ˜0.8 T and an anisotropy field ranging from 6 to 8 T. On increasing the Fe content x , substantial uniaxial anisotropy, Ku≥1.0 MJm -3 , can be maintained over the full x range, while the magnetization of the compound is reduced from 400 to 280 kAm -1 . The total magnetization is almost entirely given by the sum of the spin moments originating from the ferrimagnetic Mn and Fe sublattices, with the latter being coupled ferromagnetically to one of the former. The orbital magnetic moments are practically quenched and have negligible contributions to the magnetization. The films with x =0.73 exhibit an anomalous Hall angle of 2.5 % and a Fermi-level spin polarization above 51 % , as measured by point contact Andreev reflection. The Fe-substituted Mn2Ga films are tunable with a unique combination of high anisotropy, low magnetization, appreciable spin polarization, and low surface roughness, making them strong candidates for thermally stable spin-transfer-torque switching nanomagnets with lateral dimensions down to 10 nm.

  12. Nature of electron correlation and hybridization in NixCu1−xMnSb Heusler alloys

    Directory of Open Access Journals (Sweden)

    I. Sarkar

    2016-08-01

    Full Text Available The electronic structure of Heusler alloys having mixed magnetic phases, comprising of vicinal anti-ferromagnetic and ferromagnetic orders, is of great significance. We present the results of an electronic structure study on NixCu1−xMnSb Heusler alloys, using Mn-2p core-level photoemission spectroscopy. Room temperature data in the paramagnetic phase reveal a non-monotonic variation of both electron correlation strength and conduction-band hybridization such that the former enhances while the latter weakens for compositions showing a mixed phase relative to compositions at the phase boundaries to the ordered phases. The results suggest a possible electronic driving force for settling mixed-magnetic phases.

  13. Designed synthesis of MOx(M = Zn, Fe, Sn, Ni, Mn, Co, Ce, Mg, Ag), Pt, and Au nanoparticles supported on hierarchical CuO hollow structures.

    Science.gov (United States)

    Zhang, Zailei; Jung, Ji Chul; Yan, Ning

    2016-12-01

    Despite intensive research into support substrates for the dispersal of nanoparticles and their applications, there has been a lack of general methods to produce metal oxide hollow substrates supporting a wide range of metal and metal oxides. Herein, a synthetic protocol for the preparation of CuO hollow structure-supported MO x (M = Zn, Fe, Ni, Sn, Mn, Co, Ce, Mg, and Ag) and noble metals (Pt and Au) with the desired properties and shell structure, such as CuO/Fe 2 O 3 , CuO/ZnO, CuO/SnO 2 , CuO/MgO, CuO/NiO, CuO/Mn 2 O 3 , CuO/CoO, CuO/CeO 2 , CuO/Ag 2 O, CuO/Pt, CuO/Au hollow cubes, CuO/ZnO double-shell hollow cubes, CuO/SnO 2 double-shell hollow octahedra, CuO/SnO 2 /Fe 2 O 3 and CuO/Mn 2 O 3 /NiO double-shell hollow cubes, was developed based on controlled calcination and etching. These hybrid hollow structures were employed not only as support substrates but also as active constituents for catalytic reactions. As an example, we demonstrated that CuO/ZnO hollow cubes are remarkably efficient in converting solid chitin biomass to liquid chemicals in methanol. In addition, CuO/ZnO double-shell hollow cubes were highly effective in the oxidation of benzyl alcohol in the presence of H 2 O 2 , whereas CuO/Pt and CuO/Au hollow cubes promoted the oxidation of benzyl alcohol in pure O 2 . The strategy developed in this work extends the controllable fabrication of high-quality CuO hollow structure-supported nanoparticles using various compositions and shell structures, paving the way to the exploration and systematic comparison of these materials in a wider range of applications.

  14. Triangle islands and cavities on the surface of evaporated Cu(In, Ga)Se2 absorber layer

    International Nuclear Information System (INIS)

    Han Anjun; Zhang Yi; Liu Wei; Li Boyan; Sun Yun

    2012-01-01

    Highlights: ► Lots of uncommon triangle islands and cavities are found on (1 1 2) planes terminated by Se atoms of evaporated Cu(In, Ga)Se 2 thin films. ► Se ad-dimer as a nucleus, Cu atom diffusion from Cu(In, Ga)Se 2 grains brings the epitaxial triangle island. ► The triangle islands grow with a two-dimensional layered mode. ► The triangle cavities are formed due to the insufficient coalescence of triangle islands. ► The performance of solar cell without triangle islands is improved. - Abstract: Cu(In, Ga)Se 2 (CIGS) thin films are co-evaporated at a constant substrate temperature of 500 °C on the Mo/soda lime glass substrates. The structural properties and chemical composition of the CIGS films are studied by an X-ray diffractometer (XRD) and an X-ray fluorescent spectrometer (XRF), respectively. A scanning electron microscope (SEM) is used to study the surface morphology. Lots of uncommon triangle islands and cavities are found on some planes of the CIGS thin films. We investigate the formation mechanism of these triangle islands. It is found that the planes with the triangle islands are (1 1 2) planes terminated by Se atoms. Se ad-dimer as a nucleus, Cu diffusion from CIGS grains brings the epitaxial triangle islands which grow with a two-dimensional layered mode. The film with Cu/(Ga + In) = 0.94–0.98 is one key of the formation of these islands. The triangle cavities are formed due to the insufficient coalescence of triangle islands. The growth of triangle islands brings a compact surface with large layered grains and many jagged edges, but no triangle cavity. Finally, we compare the performance of solar cell with triangle islands and layered gains. It is found that the performance of solar cell with large layered gains is improved.

  15. Toward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control

    Czech Academy of Sciences Publication Activity Database

    Riester, S.W.E.; Stolichnov, I.; Trodahl, H.J.; Setter, N.; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, Tomáš

    2009-01-01

    Roč. 94, č. 6 (2009), 063504/1-063504/3 ISSN 0003-6951 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : Curie temperature * dielectric polarisation * erroelectric devices * ferroelectric materials * insulated gate field effect tran Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.554, year: 2009 http://link.aip.org/link/?APL/94/063504

  16. Reduced Cu(InGa)Se2 Thickness in Solar Cells Using a Superstrate Configuration

    Energy Technology Data Exchange (ETDEWEB)

    Shafarman, William N. [Univ. of Delaware, Newark, DE (United States)

    2015-03-30

    This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se2 manufacturing by reducing the thickness of the Cu(InGa)Se2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se2 thicknesses less than 1 µm. The primary objective was to demonstrate a Cu(InGa)Se2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light

  17. High-pressure synthesis of ferromagnetic Mn sub 3 Ge with the Cu sub 3 Au-type structure

    CERN Document Server

    Takizawa, H; Uheda, K; Endo, T

    2002-01-01

    A new intermetallic compound, Mn sub 3 Ge, has been synthesized by direct reaction of elemental components at 6.2 GPa and 1000 deg. C for 30 min using a belt-type high-pressure apparatus. The compound crystallizes into a cubic structure with the space group Pm3m, namely the L1 sub 2 -type (Cu sub 3 Au-type) structure. The structure was refined by Rietveld analysis of the powder x-ray diffraction data and the lattice constant was determined as a = 0.380 19(3) nm. The compound shows metallic conductivity and ferromagnetism with a Curie temperature of 400 K.

  18. LOW-TEMPERATURE OZONE DECOMPOSITION BY COMPLEXES OF Cu(II, Co(II AND Mn(II WITH HEXAMETHYLENETETRAMINE

    Directory of Open Access Journals (Sweden)

    A. S. Truba

    2016-04-01

    Full Text Available First, the complexes MCl2*HTMA*xH2O/SiO2 (M = Cu(II, Co(II, Mn(II with hexa-methylenetetramine (HMTA molecule weakly bound with a central M atom (CM ranging from 5.010-7 to 5.010-6 mol/g have been found to catalyse the ozone decomposition. Their activity and turnover number exceeded much those for MCl2*хН2О/ SiO2 acido complexes

  19. Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4}: Novel keesterite type solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Vergara, F., E-mail: fer_martina@u.uchile.cl [Departamento de Quimica, Facultad de Ciencias, Universidad de Chile, Santiago (Chile); Galdamez, A., E-mail: agaldamez@uchile.cl [Departamento de Quimica, Facultad de Ciencias, Universidad de Chile, Santiago (Chile); Manriquez, V. [Departamento de Quimica, Facultad de Ciencias, Universidad de Chile, Santiago (Chile); Barahona, P. [Facultad de Ciencias Basicas, Universidad Catolica del Maule, Talca (Chile); Pena, O. [Institut des Sciences Chimiques de Rennes, UMR 6226, Universite de Rennes 1, Rennes (France)

    2013-02-15

    A new family of Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} chalcogenides has been synthesized by conventional solid-state reactions at 850 Degree-Sign C. The reactions products were characterized by powder X-ray diffraction (XRD), energy-dispersive X-ray analysis (SEM-EDS), Raman spectroscopy and magnetic susceptibility. The crystal structures of two members of the solid solution series Cu{sub 2}Mn{sub 0.4}Co{sub 0.6}SnS{sub 4} and Cu{sub 2}Mn{sub 0.2}Co{sub 0.8}SnS{sub 4} have been determined by single-crystal X-ray diffraction. Both phases crystallize in the tetragonal keesterite-type structure (space group I4{sup Macron }). The distortions of the tetrahedral volume of Cu{sub 2}Mn{sub 0.4}Co{sub 0.6}SnS{sub 4} and Cu{sub 2}Mn{sub 0.2}Co{sub 0.8}SnS{sub 4} were calculated and compared with the corresponding differences in the Cu{sub 2}MnSnS{sub 4} (stannite-type) end-member. The compounds show nearly the same Raman spectral features. Temperature-dependent magnetization measurements (ZFC/FC) and high-temperature susceptibility indicate that these solid solutions are antiferromagnetic. - Graphical abstract: View along [100] of the Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} structure showing tetrahedral units and magnetic measurement ZFC-FC at 500 Oe. The insert shows the 1/{chi}-versus-temperature plot fitted by a Curie-Weiss law. Highlights: Black-Right-Pointing-Pointer Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} solid solutions belong to the family of compounds adamantine. Black-Right-Pointing-Pointer Resolved single crystals of the solid solutions have space group I4{sup Macron }. Black-Right-Pointing-Pointer The distortion of the tetrahedral volume of Cu{sub 2}Mn{sub 1-x}Co{sub x}SnS{sub 4} were calculated. Black-Right-Pointing-Pointer These solid solutions are antiferromagnetic.

  20. Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films

    Science.gov (United States)

    Dong, Guohua; Tan, Guoqiang; Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-06-01

    Pure BiFeO3 (BFO) and Mn, Cu co-doped BiFeO3 (BFMCO) thin films were deposited on fluorine doped tin oxide (FTO) substrates by a chemical solution deposition method. Detailed investigations were made on the effects of Mn and Cu co-doping on the crystal structure, the defect chemistry, multiferroic properties of the BFO thin films. With the co-doping of Mn and Cu, a structural transition from the rhombohedral (R3c:H) to the biphasic structure (R3c:H + P1) is confirmed by XRD, Rietveld refinement and Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows that the coexistence of Fe2+/Fe3+ and Mn2+/Mn3+ ions in the co-doping films are demonstrated. Meanwhile, the way of the co-doping at B-sits is conducive to suppress Fe valence state of volatility and to decrease oxygen vacancies and leakage current. It's worth noting that the co-doping can induce the superior ferroelectric properties (a huge remanent polarization, 2Pr ∼ 220 μC/cm2 and a relatively low coercive field, 2Ec ∼ 614 kV/cm). The introduction of Mn2+ and Cu2+ ions optimizes the magnetic properties of BFO thin films by the biphasic structure and the destruction of spin cycloid.

  1. A new class of amorphous cathode active material LixMyPOz (M = Ni, Cu, Co, Mn, Au, Ag, Pd)

    Science.gov (United States)

    Sabi, Yuichi; Sato, Susumu; Hayashi, Saori; Furuya, Tatsuya; Kusanagi, Susumu

    2014-07-01

    A new class of amorphous cathode active material LixMyPOz (LiMPO) is proposed. The materials are sputter deposited to thin film form by Li3PO4 together with metal or metal oxide targets. Among several materials tested as thin-film battery, working material found are M = Ni, Cu, Co, Mn, Au, Ag, Pd. The property is intensively studied for LixCuyPOz (LiCuPO) and LixNiyPOz (LiNiPO). Those materials shows wide composition margin such as composition y between 1 and 3, and high capacity for LiNiPO with maximum value of 330 mAh g-1. The capability to charge and discharge at high rate is shown up to 30 C. This preliminary report reveals its high potentiality for further optimization.

  2. Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Wunderlich, Joerg; Novák, Vít; Olejník, Kamil; Gallagher, B. L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Ferguson, A.J.; Němec, P.

    2014-01-01

    Roč. 86, č. 3 (2014), s. 855-896 ISSN 0034-6861 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) Praemium Academiae Institutional support: RVO:68378271 Keywords : ferromagnetic semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 29.604, year: 2014

  3. Molecular imprinting method for fabricating novel glucose sensor: polyvinyl acetate electrode reinforced by MnO2/CuO loaded on graphene oxide nanoparticles.

    Science.gov (United States)

    Farid, Mohammad Masoudi; Goudini, Leila; Piri, Farideh; Zamani, Abbasali; Saadati, Fariba

    2016-03-01

    An enzyme free glucose sensor was prepared by a molecular imprinting method (MIP). The procedure was developed by in situ preparation of a new polyvinyl acetate (PVA) electrode reinforced by MnO2/CuO loaded on graphene oxide (GO) nanoparticles (PVA/MnO2@GO/CuO). The nanocomposite was modified in the presence of glucose and then imprinted. A carbone paste method with voltammetry was used in the fabrication of the sensor from prepared MIP nanocomposite. PVA/MnO2@GO/CuO electrode was characterized by X-ray diffraction, FT-IR spectroscopy and scanning electron microscopy. Electrocatalytic activity of the electrode toward glucose oxidation was then investigated by cyclic voltammetry in alkaline medium. The results show that the response of PVA/MnO2@GO/CuO MIP is much higher than PVA/MnO2@GO/CuO non-imprinted electrode toward glucose oxidation. The detection limit was 53μM, and the sensor responses are linear for concentrations from 0.5 to 4.4mM. Relative standard deviations for intra- and inter-day determination were less than 6.0%. The relative recoveries for different samples were 96%. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Magnetic interactions and electronic structure of Pt2Mn1− xYxGa (Y ...

    Indian Academy of Sciences (India)

    2017-06-19

    Jun 19, 2017 ... First-principles density functional theory-based calculations have been carried out to predict the effects of Mn replacement by Fe and Cr on electronic as well as ... Homi Bhaba National Institute, Training School Complex, Anushakti Nagar, Mumbai 400 094, India; Theory and Simulations Laboratory, Human ...

  5. Electronic structure and magnetic properties of quaternary Heusler alloys CoRhMnZ (Z = Al, Ga, Ge and Si) via first-principle calculations

    International Nuclear Information System (INIS)

    Benkabou, M.; Rached, H.; Abdellaoui, A.; Rached, D.; Khenata, R.

    2015-01-01

    First-principle calculations are performed to predict the electronic structure and elastic and magnetic properties of CoRhMnZ (Z = Al, Ga, Ge and Si) Heusler alloys. The calculations employ the full-potential linearized augmented plane wave. The exchange-correlations are treated within the generalized gradient approximation of Perdew–Burke and Ernzerhof (GGA-PBE). The electronic structure calculations show that these compounds exhibit a gap in the minority states band and are clearly half-metallic ferromagnets, with the exception of the CoRhMnAl and CoRhMnGa, which are simple ferromagnets that are nearly half metallic in nature. The CoRhMnGe and CoRhMnSi compounds and their magnetic moments are in reasonable agreement with the Slater-Pauling rule, which indicates the half metallicity and high spin polarization for these compounds. At the pressure transitions, these compounds undergo a structural phase transition from the Y-type I → Y-type II phase. We have determined the elastic constants C 11 , C 12 and C 44 and their pressure dependence, which have not previously been established experimentally or theoretically. - Highlights: • Based on DFT calculations, CoRhMnZ (Z = Al, Ga, Ge and Si) Heusler alloys were investigated. • The magnetic phase stability was determined from the total energy calculations. • The mechanical properties were investigated

  6. Electronic structure and magnetic properties of quaternary Heusler alloys CoRhMnZ (Z = Al, Ga, Ge and Si) via first-principle calculations

    Energy Technology Data Exchange (ETDEWEB)

    Benkabou, M. [Laboratoire des Matériaux Magnétiques, Faculté des Sciences, Université DjillaliLiabès de Sidi Bel-Abbès, Sidi Bel-Abbès 22000 (Algeria); Rached, H. [Laboratoire des Matériaux Magnétiques, Faculté des Sciences, Université DjillaliLiabès de Sidi Bel-Abbès, Sidi Bel-Abbès 22000 (Algeria); Département de Physique, Faculté des Sciences, Université Hassiba Benbouali, Chlef 02000 (Algeria); Abdellaoui, A. [Laboratoire des Matériaux Magnétiques, Faculté des Sciences, Université DjillaliLiabès de Sidi Bel-Abbès, Sidi Bel-Abbès 22000 (Algeria); Rached, D., E-mail: rachdj@yahoo.fr [Laboratoire des Matériaux Magnétiques, Faculté des Sciences, Université DjillaliLiabès de Sidi Bel-Abbès, Sidi Bel-Abbès 22000 (Algeria); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique de la Matière, (LPQ3M), Université de Mascara, Mascara 29000 (Algeria); and others

    2015-10-25

    First-principle calculations are performed to predict the electronic structure and elastic and magnetic properties of CoRhMnZ (Z = Al, Ga, Ge and Si) Heusler alloys. The calculations employ the full-potential linearized augmented plane wave. The exchange-correlations are treated within the generalized gradient approximation of Perdew–Burke and Ernzerhof (GGA-PBE). The electronic structure calculations show that these compounds exhibit a gap in the minority states band and are clearly half-metallic ferromagnets, with the exception of the CoRhMnAl and CoRhMnGa, which are simple ferromagnets that are nearly half metallic in nature. The CoRhMnGe and CoRhMnSi compounds and their magnetic moments are in reasonable agreement with the Slater-Pauling rule, which indicates the half metallicity and high spin polarization for these compounds. At the pressure transitions, these compounds undergo a structural phase transition from the Y-type I → Y-type II phase. We have determined the elastic constants C{sub 11}, C{sub 12} and C{sub 44} and their pressure dependence, which have not previously been established experimentally or theoretically. - Highlights: • Based on DFT calculations, CoRhMnZ (Z = Al, Ga, Ge and Si) Heusler alloys were investigated. • The magnetic phase stability was determined from the total energy calculations. • The mechanical properties were investigated.

  7. Observed and modeled seasonal trends in dissolved and particulate Cu, Fe, Mn, and Zn in a mining-impacted stream.

    Science.gov (United States)

    Butler, Barbara A; Ranville, James F; Ross, Philippe E

    2008-06-01

    North Fork Clear Creek (NFCC) in Colorado, an acid-mine drainage (AMD) impacted stream, was chosen to examine the distribution of dissolved and particulate Cu, Fe, Mn, and Zn in the water column, with respect to seasonal hydrologic controls. NFCC is a high-gradient stream with discharge directly related to snowmelt and strong seasonal storms. Additionally, conditions in the stream cause rapid precipitation of large amounts of hydrous iron oxides (HFO) that sequester metals. Because AMD-impacted systems are complex, geochemical modeling may assist with predictions and/or confirmations of processes occurring in these environments. This research used Visual-MINTEQ to determine if field data collected over a two and one-half year study would be well represented by modeling with a currently existing model, while limiting the number of processes modeled and without modifications to the existing model's parameters. Observed distributions between dissolved and particulate phases in the water column varied greatly among the metals, with average dissolved fractions being >90% for Mn, approximately 75% for Zn, approximately 30% for Cu, and seasonal trend was observed for the metals predominantly in the dissolved phase (Mn and Zn), with increasing concentrations during base-flow conditions and decreasing concentrations during spring-runoff. This trend was less obvious for Cu and Fe. Within hydrologic seasons, storm events significantly influenced in-stream metals concentrations. The most simplified modeling, using solely sorption to HFO, gave predicted percentage particulate Cu results for most samples to within a factor of two of the measured values, but modeling data were biased toward over-prediction. About one-half of the percentage particulate Zn data comparisons fell within a factor of two, with the remaining data being under-predicted. Slightly more complex modeling, which included dissolved organic carbon (DOC) as a solution phase ligand, significantly reduced the

  8. Hydrogen storage properties of LaMgNi3.6M0.4 (M = Ni, Co, Mn, Cu, Al) alloys

    International Nuclear Information System (INIS)

    Yang, Tai; Zhai, Tingting; Yuan, Zeming; Bu, Wengang; Xu, Sheng; Zhang, Yanghuan

    2014-01-01

    Highlights: • La–Mg–Ni system AB 2 -type alloys were prepared by induction melting. • Structures and lattice parameters were analysed by XRD. • Hydrogen absorption/desorption performances were studied. • Mechanisms of hydrogen absorption capacity fading were investigated. - Abstract: LaMgNi 3.6 M 0.4 (M = Ni, Co, Mn, Cu, Al) alloys were prepared through induction melting process. The phase compositions and crystal structures were characterised via X-ray diffraction (XRD). The hydrogen storage properties, including activation performance, hydrogen absorption capacity, cycle stability, alloy particle pulverisation and plateau pressure, were systemically investigated. Results show that Ni, Co, Mn and Cu substitution alloys exhibit multiphase structures comprising the main phase LaMgNi 4 and the secondary phase LaNi 5 . However, the secondary phase of the Al substitution alloy changes into LaAlNi 4 . The lattice parameters and cell volumes of the LaMgNi 4 phase follow the order Ni < Co < Al < Cu < Mn. Activation is simplified through partial substitution of Ni with Al, Cu and Co. The hydrogen absorption capacities of all of the alloys are approximately 1.7 wt.% at the first activation process; however, they rapidly decrease with increasing cycle number. In addition, the stabilities of hydriding and dehydriding cycles decrease in the order Al > Co > Ni > Cu > Mn. Hydriding processes result in numerous cracks and amorphisation of the LaMgNi 4 phase in the alloys. The p–c isotherms were determined by a Sieverts-type apparatus. Two plateaus were observed for the Ni, Co and Al substitution alloys, whereas only one plateau was found for Mn and Cu. This result was caused by the amorphisation of the LaMgNi 4 phase during the hydriding cycles. Reversible absorption and desorption of hydrogen are difficult to achieve. Substitutions of Ni with Co, Mn, Cu and Al significantly influence the reduction of hysteresis between hydriding and dehydriding

  9. Real time observation of phase formations by XRD during Ga-rich or In-rich Cu(In, Ga)Se{sub 2} growth by co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pistor, Paul; Zahedi-Azad, Setareh; Hartnauer, Stefan; Waegele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland [Institute of Physics, Martin-Luther-University Halle-Wittenberg, Halle (Saale) (Germany)

    2015-09-15

    Solar cells with Cu(In, Ga)Se{sub 2} absorbers rely on the three-stage co-evaporation process with Cu-poor/Cu-rich/Cu-poor absorber deposition conditions for highest efficiency devices. During the three-stage process, the formation and evolution of different selenide phases with changing compositions throughout the process crucially determine the final absorber quality. In this contribution, we monitor the evolution of crystalline phases in real-time with an X-ray diffraction (XRD) line detector setup implemented into an evaporation setup. Using the common three-stage process, we prepare and compare samples covering the full alloying range from CuInSe{sub 2} to CuGaSe{sub 2}. The in situ XRD allows the detection of the crystalline phases present at all times of the process as well as an advanced analysis of the phase evolution through a closer look at peak shifts and the full width at half maximum. For samples with a Ga/(Ga + In) ratio (GGI) < 0.5, distinct phase transitions associated with the transition to the reported vacancy compounds Cu(In,Ga){sub 5}Se{sub 8} and Cu(In, Ga){sub 3}Se{sub 5} are observed. No such indication was found for samples with a GGI > 0.5. For Ga-rich Cu(In, Ga)Se{sub 2} phases with a GGI of 0.55, the XRD analysis evidenced a Ga-rich phase segregation before the stoichiometric point was reached. The above findings are discussed in view of their implication on wide gap solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Band mapping of the weakly off-stoichiometric Heusler alloy Ni.sub.49.7./sub.Mn.sub.29.1./sub.Ga.sub.21.2./sub. in the austenitic phase

    Czech Academy of Sciences Publication Activity Database

    Polyak, Yaroslav; Drchal, Václav; Kudrnovský, Josef; Heczko, Oleg; Honolka, Jan; Cháb, Vladimír; Kopeček, Jaromír; Lančok, Ján

    2015-01-01

    Roč. 91, č. 16 (2015), "165115-1"-"165115-11" ISSN 1098-0121 R&D Projects: GA ČR GA13-30397S; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : Ni 2 MnGa * transitions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  11. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    International Nuclear Information System (INIS)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A; Martinez-Criado, G; Salome, M; Susini, J; Olguin, D; Dhar, S

    2009-01-01

    By means of x-ray absorption near-edge structure (XANES) several Ga 1-x Mn x N (0.03 2 ↑ band localized in the gap region, and the corresponding anti-bonding state t 2 ↓, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  12. Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

    OpenAIRE

    Yanagi, Hiroshi; Watanabe, Takumi; Kodama, Katsuaki; Iikubo, Satoshi; Shamoto, Shin-ichi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2009-01-01

    Electronic and magnetic properties of a layered compound LaMnPO are examined in relation to a newly discovered iso-structural superconductor LaFeAs(P)O. Neutron diffraction measurements, together with temperature dependent magnetic susceptibility, clarify that LaMnPO is an antiferromagnet at least up to 375 K. The spin moment of a Mn ion is determined to be 2.26  µB at room temperature, and the spin configuration is antiparallel in the Mn–P plane and parallel between the Mn–P planes, which is...

  13. Microstructure of epitaxial thin films of the ferromagnetic shape memory alloy Ni{sub 2}MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Eichhorn, Tobias

    2011-12-09

    This work is concerned with the preparation and detailed characterization of epitaxial thin films of the Heusler compound Ni{sub 2}MnGa. This multiferroic compound is of both technological and scientific interest due to the outstanding magnetic shape memory (MSM) behavior. Huge magnetic-field-induced strains up to 10 % have been observed for single crystals close to a Ni{sub 2}MnGa composition. The effect is based on a redistribution of crystallographic twin variants of tetragonal or orthorhombic symmetry. Under the driving force of the external magnetic field twin boundaries can move through the crystal, which largely affects the macroscopic shape. The unique combination of large reversible strain, high switching frequency and high work output makes the alloy a promising actuator material. Since the MSM effect results from an intrinsic mechanism, MSM devices possess great potential for implementation in microsystems, e.g. microfluidics. So far significant strains, in response to an external magnetic field, have been observed for bulk single crystals and foams solely. In order to take advantage of the effect in applications concepts for miniaturization are needed. The rather direct approach, based on epitaxial thin films, is explored in the course of this work. This involves sample preparation under optimized deposition parameters and fabrication of freestanding single-crystalline films. Different methods to achieve freestanding microstructures such as bridges and cantilevers are presented. The complex crystal structure is extensively studied by means of X-ray diffraction. Thus, the different crystallographic twin variants that are of great importance for the MSM effect are identified. In combination with microscopy the twinning architecture for films of different crystallographic orientation is clarified. Intrinsic blocking effects in samples of (100) orientation are explained on basis of the variant configuration. In contrast, a promising twinning microstructure

  14. Epitaxial growth of chalcopyrite CuInS2 films on GaAs (001) substrates by evaporation method with elemental sources

    International Nuclear Information System (INIS)

    Nozomu, Tsuboi; Satoshi, Kobayash; Nozomu, Tsuboi; Takashi, Tamogami

    2010-01-01

    Full text : Ternary chalcopyrite semiconductor CuInS 2 is one of the potential candidates for absorber layers in high-efficiency thin film solar cells due to its direct bandgap Eg of 1.5 eV, which matches with solar spectrum. However, CuInS 2 solar cells face the problem of lower solar conversion efficiency compared with Cu(InGa)Se 2 solar cells. Investigation of fundamental properties of CuInS 2 films is necessary to understand key issues for solar cell performance. Although in bulk CuInS 2 is known to crystallize into chalcopyrite (CH) structure, in thin film other structures such as Cu-Au (CA) and sphalerite (SP) structures may coexist. It was reported epitaxial growth of slightly Cu-rich CuInS 2 films with c-axis orientated CA only and/or with a mixture of a- and c-axes orientated CH structures on GaP (001) at substrate temperature of 500 degrees using the conventional evaporation method with three elemental sources. Successful growth of epitaxial CH structured CuInS 2 were observed for films grown on GaP at 570 degrees with slightly Cu-rich composition. In this paper, CuInS 2 films with various [Cu]/[In] ratios are grown on GaAs(001) substrates, and the composition range in terms of the [Cu]/[In] ratio where epitaxial films with CH structure grow and the structural qualities of the films are discussed in comparison with those on GaP substrates. Films with various ratios of [Cu]/[In]=0.8 ≤1.9 are grown at 500 degrees and 570 degrees using the evaporation system described in our previous reports. Regardless of the substrate temperature, noticeable X-ray diffraction (XRD) peaks of CH structured CuInS 2 phase are observed in slightly Cu-rich films. However, reflection high energy electron diffraction (RHEED) patterns of the slightly Cu-rich films grown at 570 degrees exhibit noticeable spots not only due to the CH structure but also due to the CA structure. The amount of the CA structure is considered to be small because of the absence of the XRD peaks of the CA

  15. Oximato bridged Rh M and Rh M species (M = Mn, Co, Ni; M = Cu, Ag)

    Indian Academy of Sciences (India)

    WINTEC

    In structurally characterized [RhIIICl2(PhL)2]2Mn(H2O)2.H2O the centrosymmetric distorted octahedral. MnO6 coordination sphere is spanned by four oximato oxygen atoms and two water molecules lying in trans position. In the lattice the neighbouring molecules are held together by H2O⋅⋅⋅H2O⋅⋅⋅H2O hydrogen.

  16. Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Výborný, Karel; Kučera, Jan; Sinova, J.; Rushforth, A.W.; Gallagher, B. L.; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 16 (2009), 165204/1-165204/8 ISSN 1098-0121 R&D Projects: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * diluted magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://arxiv.org/abs/0906.3151

  17. Cd, Cu, and Mn from Uruguay River Basin in Uruguaiana, RS, Brazil, and their toxicological potential for human leukocyte

    Directory of Open Access Journals (Sweden)

    Gislaine Rezer Costa

    2016-12-01

    Full Text Available This study assessed the limnology from the Medium Uruguay River Basin in Uruguaiana, Brazil, with a focus on the concentration of heavy metals (Cd, Cu, and Mn, to assess the toxicological potential (cytotoxicity and genotoxicity for humans using as biological matrix of study human leukocyte cells. The conductivity, resistivity, and dissolved O2 levels exceeded the limits recommended by the National Environmental Council (Conselho Nacional do Meio Ambiente - CONAMA. The percentage of non-viable human leukocyte cells exposed to water samples was approximately 20% higher than that of the negative control (<3%, but similar to the positive control. The DNA damage index was high for all heavy metal concentrations assayed when compared to the negative control 12±2.96, p < 0.0001, with a range of 155.66±23.89 to 194.33±23.23, but similar to the positive control (210.62±27.48. Moreover, the leukocyte degeneration index was higher in all samples containing heavy metals than in the negative control (4%, which demonstrates to be due the presence of Cu (11.8-12.5%, Cd (13-15.6%, and Mn (15.6-22.5%. Taken together, our results show that the quality from water samples analyzed is below than recommended by CONAMA and offers risk of contamination by heavy metals for the general population.

  18. Rapid and nondestructive measurement of labile Mn, Cu, Zn, Pb and As in DGT by using field portable-XRF.

    Science.gov (United States)

    Chen, Zheng; Williams, Paul N; Zhang, Hao

    2013-09-01

    The technique of diffusive gradients in thin films (DGT) is often employed to quantify labile metals in situ; however, it is a challenge to perform the measurements in-field. This study evaluated the capability of field-portable X-ray fluorescence (FP-XRF) to swiftly generate elemental speciation information with DGT. Biologically available metal ions in environmental samples passively preconcentrate in the thin films of DGT devices, providing an ideal and uniform matrix for XRF nondestructive detection. Strong correlation coefficients (r > 0.992 for Mn, Cu, Zn, Pb and As) were obtained for all elements during calibration. The limits of quantitation (LOQ) for the investigated elements of FP-XRF on DGT devices are 2.74 for Mn, 4.89 for Cu, 2.89 for Zn, 2.55 for Pb, and 0.48 for As (unit: μg cm(-2)). When Pb and As co-existed in the solution trials, As did not interfere with Pb detection when using Chelex-DGT. However, there was a significant enhancement of the Pb reading attributed to As when ferrihydrite binding gels were tested, consistent with Fe-oxyhydroxide surfaces absorbing large quantities of As. This study demonstrates the value of the FP-XRF technique to rapidly and nondestructively detect the metals accumulated in DGT devices, providing a new and simple diagnostic tool for on-site environmental monitoring of labile metals/metalloids.

  19. Microstructural characterization of Cu82.3Al8.3Mn9.4 shape memory alloy after rolling

    Directory of Open Access Journals (Sweden)

    Mirko Gojić

    2017-09-01

    Full Text Available In this paper, the microstructure of Cu82.3Al8.3Mn9.4 (in wt. % shape memory alloy after hot and cold rolling was investigated. The Cu82.3Al8.3Mn9.4 alloy was produced by a vertical continuous casting method in the form a cylinder rod of 8 mm in diameter. After the casting, hot and cold rolling was performed. By hot rolling a strip with a thickness of 1.75 mm was obtained, while by cold rolling a strip with a thickness of 1.02 mm was produced. After the rolling process, heat treatment was performed. Heat treatment was carried out by solution annealing at 900 °C held for 30 minutes and water quenched immediately after heating. The microstructure characterization of the investigated alloy was carried out by optical microscopy (OM, scanning electron microscopy (SEM equipped with a device for energy dispersive spectroscopy (EDS. Phase transformation temperatures and fusion enthalpies were determined by differential scanning calorimetry (DSC method. The homogenous martensite microstructure was confirmed by OM and SEM micrographs after casting. During rolling the two-phase microstructure occurred. Results of DSC analysis showed martensite start (Ms, martensite finish (Mf, austenite start (As and austenite finish (Af temperatures.

  20. Influence of heat treatment on microstructure and tensile properties of a cast Al-Cu-Si-Mn alloy

    Directory of Open Access Journals (Sweden)

    Liu Zhixue

    2013-11-01

    Full Text Available Solution and aging treatments are important approaches to improve mechanical properties and microstructure of aluminum-base alloys. In this research, a new type high strength Al-Cu-Si-Mn cast alloy was prepared. The effect of different solution and aging treatment temperatures on microstructure and mechanical properties of the Al-Cu-Si-Mn cast alloy were studied by means of microstructure observation and mechanical properties testing. Results showed that after solution treated at different temperatures for 12 h and aged at 175 ℃ for 12 h, with the increase of the solution temperature, both the tensile strength and the elongation of the alloy firstly increase and then decrease, and reach their peak values at 530 ℃. When the solution temperature is below 530 ℃, the microstructure of the alloy consists of α phase, undissolved θ phase and T phase; while when it exceeds 530 ℃, the microstructure only consists of α phase and T phase. After solution treated at 530 ℃ for 12 h and aged at different temperatures for 12 h, both the tensile strength and the elongation of the alloy firstly increase and then decrease with the increasing of temperature, and reach their peak values at 175 ℃. Therefore, the optimal heat treatment process for the alloy in this study is 12 h solution at 530 ℃ and 12 h aging at 175 ℃, and the corresponding tensile strength is 417 MPa, elongation is 4.0%.

  1. Atomic kinetic Monte Carlo model based on ab initio data: Simulation of microstructural evolution under irradiation of dilute Fe-CuNiMnSi alloys

    International Nuclear Information System (INIS)

    Vincent, E.; Becquart, C.S.; Domain, C.

    2007-01-01

    The embrittlement of pressure vessel steels under radiation has been long ago correlated with the presence of Cu solutes. Other solutes such as Ni, Mn and Si are now suspected to contribute also to the embrittlement. The interactions of these solutes with radiation induced point defects thus need to be characterized properly in order to understand the elementary mechanisms behind the formation of the clusters formed upon radiation. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects with solute atoms in dilute FeX alloys (X = Cu, Mn, Ni or Si) in order to build a database used to parameterise an atomic kinetic Monte Carlo model. Some results of irradiation damage in dilute Fe-CuNiMnSi alloys obtained with this model are presented

  2. Atomic kinetic Monte Carlo model based on ab initio data: Simulation of microstructural evolution under irradiation of dilute Fe CuNiMnSi alloys

    Science.gov (United States)

    Vincent, E.; Becquart, C. S.; Domain, C.

    2007-02-01

    The embrittlement of pressure vessel steels under radiation has been long ago correlated with the presence of Cu solutes. Other solutes such as Ni, Mn and Si are now suspected to contribute also to the embrittlement. The interactions of these solutes with radiation induced point defects thus need to be characterized properly in order to understand the elementary mechanisms behind the formation of the clusters formed upon radiation. Ab initio calculations based on the density functional theory have been performed to determine the interactions of point defects with solute atoms in dilute FeX alloys (X = Cu, Mn, Ni or Si) in order to build a database used to parameterise an atomic kinetic Monte Carlo model. Some results of irradiation damage in dilute Fe-CuNiMnSi alloys obtained with this model are presented.

  3. Electronic, magnetic and transport properties of quaternary (Cu,Ni)MnSb alloys

    Czech Academy of Sciences Publication Activity Database

    Kudrnovský, Josef; Drchal, Václav; Máca, František; Turek, Ilja

    2008-01-01

    Roč. 88, 18-20 (2008), s. 2739-2746 ISSN 1478-6435 R&D Projects: GA ČR GA202/07/0456; GA MŠk OC 150; GA AV ČR IAA100100616 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20410507 Keywords : density functional theory * exchange interaction * effective Heisenberg model * magnetic disorder * Curie temperature * quaternary Heusler alloys Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.384, year: 2008

  4. Fast magnetization switching in GaMnAs induced by electrical fields

    Czech Academy of Sciences Publication Activity Database

    Balestriere, P.; Devolder, T.; Kim, J.-V.; Lecoeur, P.; Wunderlich, Joerg; Novák, Vít; Jungwirth, Tomáš; Chappert, C.

    2011-01-01

    Roč. 99, č. 24 (2011), 242505/1-242505/3 ISSN 0003-6951 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : magnet ization switching * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnet ism Impact factor: 3.844, year: 2011

  5. Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels

    Czech Academy of Sciences Publication Activity Database

    Stolichnov, I.; Riester, S.W.E.; Mikheev, E.; Setter, N.; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, Tomáš; Trodahl, H.J.

    2011-01-01

    Roč. 83, č. 11 (2011), 115203/1-115203/5 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * ferroelectrics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  6. Elasticity and magnetism of Ni2 MnGa premartensitic tweed

    Czech Academy of Sciences Publication Activity Database

    Seiner, Hanuš; Kopecký, Vít; Landa, Michal; Heczko, Oleg

    2014-01-01

    Roč. 251, č. 10 (2014), s. 2097-2103 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GAP107/11/0391 Grant - others:Rada Programu interní podpory projektů mezinárodní spolupráce AV ČR(CZ) M100761203 Program:M Institutional support: RVO:61388998 ; RVO:68378271 Keywords : magneto-elastic coupling * Ni–Mn–Ga * premartensite * tweed microstructure Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.489, year: 2014 http://http://onlinelibrary.wiley.com/doi/10.1002/pssb.201350415/full

  7. Anti-phase boundaries and magnetic domain structures in Ni{sub 2}MnGa-type Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Venkateswaran, S.P. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213 (United States); Nuhfer, N.T. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213 (United States); De Graef, M. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213 (United States)]. E-mail: degraef@cmu.edu

    2007-05-15

    The microstructure and magnetic domain structure of austenitic Heusler Ni{sub 2}MnGa are investigated as a function of heat treatment to study the interplay of anti-phase boundaries and magnetic domain walls. Conventional electron microscopy observations on arc-melted polycrystalline samples show that anti-phase boundaries in this system are invisible for standard two-beam imaging conditions, due to the large extinction distance of the Heusler superlattice reflections. Lorentz Fresnel and Foucault observations on quenched samples reveal a wavy magnetic domain morphology, reminiscent of curved anti-phase boundaries. A close inspection of the domain images indicates that the anti-phase boundaries have a magnetization state different from that of the matrix. Fresnel image simulations for a simple magnetization model are in good agreement with the observations. Magnetic coercivity measurements show a decrease in coercivity with annealing, which correlates with the microscopy observations of reduced anti-phase boundary density for annealed samples.

  8. Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As

    International Nuclear Information System (INIS)

    Shihab, S.; Thevenard, L.; Bardeleben, H. J. von; Gourdon, C.; Riahi, H.; Lemaître, A.

    2015-01-01

    We study the dependence of the spin stiffness constant on the phosphorus concentration in the ferromagnetic semiconductor (Ga,Mn)(As,P) with the aim of determining whether alloying with phosphorus is detrimental, neutral, or advantageous to the spin stiffness. Time-resolved magneto-optical experiments are carried out in thin epilayers. Laser pulses excite two perpendicular standing spin wave modes, which are exchange related. We show that the first mode is spatially uniform across the layer corresponding to a k≈0 wavevector. From the two frequencies and k-vector spacings we obtain the spin stiffness constant for different phosphorus concentrations using weak surface pinning conditions. The mode assessment is checked by comparison to the spin stiffness obtained from domain pattern analysis for samples with out-of-plane magnetization. The spin stiffness is found to exhibit little variation with phosphorus concentration in contradiction with ab-initio predictions

  9. Experimental Study on the Anisotropic Stress-Strain Behavior of Polycrystalline Ni-Mn-Ga in Directional Solidification

    Science.gov (United States)

    Teng, Yao; Shi, Tao; Zhu, Yuping; Li, Zongbin; Deng, Tao; Bai, Guonan

    2016-03-01

    A polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloy produced by directional solidification is the subject of this research paper. The compressive stress-strain curves of the material for different cutting angles to the solidification direction are tested. The martensite Young's modulus, macroscopic reorientation strain, and phase transition critical stress are analyzed experimentally. The results show that mechanical behaviors in the loading-unloading cycle of the material present nonlinear and anisotropic characteristics, which are all closely related to the material's orientation to the solidification direction. The martensite Young's modulus, macroscopic reorientation strain, and phase transition critical stress achieve maximum values in the solidification direction. A 50° orientation to the solidification direction is the cut-off direction of the mechanical properties, where the martensite Young's modulus and reorientation start critical stress reach minimum values. The present study is expected to provide sound guidance for practical applications.

  10. Phonon dispersion in the ferromagnetic shape memory alloy Ni2MnGa studied by neutron spectroscopy

    International Nuclear Information System (INIS)

    Vorderwisch, P.; Shapiro, S.M.

    2006-01-01

    Neutron spectroscopy is an ideal technique to study the structure and dynamics of crystals. For the ferromagnetic shape memory alloy Ni 2 MnGa, all previously obtained information from inelastic neutron scattering experiments is restricted to the phonon dispersion in the austenitic (fcc) phase of alloys with different compositions. For the (tetragonally distorted) martensitic phase recent inelastic neutron scattering data are presented. These new data were taken on a single crystal with stoichiometric composition. A single-variant martensitic phase of the sample has been obtained by the application of magnetic fields in horizontal or vertical direction with respect to the scattering plane used in the experiments. The measured phonon-dispersion curves are compared with recently published ab initio (zero-temperature) phonon-dispersion calculations. The anomalous phonon behavior observed in both, the austenitic and martensitic phase is discussed

  11. Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films

    Energy Technology Data Exchange (ETDEWEB)

    Awari, N. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); University of Groningen, 9747 AG Groningen (Netherlands); Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Fowley, C., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Green, B.; Yildirim, O.; Lindner, J.; Fassbender, J.; Deac, A. M.; Gensch, M. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Rode, K., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Lau, Y.-C.; Betto, D.; Thiyagarajah, N.; Coey, J. M. D. [CRANN, AMBER and School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Gallardo, R. A. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparíso (Chile)

    2016-07-18

    Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

  12. Effect of Magnetostatic Interactions on Twin Boundary Motion in NiMnGa Magnetic Shape Memory Alloy

    DEFF Research Database (Denmark)

    Heczko, Oleg; Vokoun, David; Kopecky, Vit

    2015-01-01

    We investigated the effect of magnetostatic interactions on the field-induced reorientation of martensite variants in Ni50.0Mn27.5Ga22.5. The reorientation, achieved by sweeping a single Type-II twin boundary along the sample, was triggered by a twinning stress of about 0.1 MPa. However, depending...... on the initial position of the twin boundary, the magnetic field providing the critical stress varied in the range 832 kA/m. By taking into account the variants sizes and their mutual interactions, we explained the observed dependence of the switching field on the location of the boundary. The resulting match...... between model predictions and measurements illustrates the fundamental role played by demagnetization effects and magnetostatic interactions in magnetic shape memory effect....

  13. Experimental evidence of stress-field-induced selection of variants in Ni-Mn-Ga ferromagnetic shape-memory alloys

    International Nuclear Information System (INIS)

    Wang, Y. D.; Brown, D. W.; Choo, H.; Liaw, P. K.; Benson, M. L.; Cong, D. Y.; Zuo, L.

    2007-01-01

    The in situ time-of-flight neutron-diffraction measurements captured well the martensitic transformation behavior of the Ni-Mn-Ga ferromagnetic shape-memory alloys under uniaxial stress fields. We found that a small uniaxial stress applied during phase transformation dramatically disturbed the distribution of variants in the product phase. The observed changes in the distributions of variants may be explained by considering the role of the minimum distortion energy of the Bain transformation in the effective partition among the variants belonging to the same orientation of parent phase. It was also found that transformation kinetics under various stress fields follows the scale law. The present investigations provide the fundamental approach for scaling the evolution of microstructures in martensitic transitions, which is of general interest to the condensed matter community

  14. Premartensitic phenomena in the ferro- and paramagnetic phases of Ni2MnGa

    DEFF Research Database (Denmark)

    Stuhr, U.; Vorderwisch, P.; Kokorin, V.V.

    1997-01-01

    at the Curie temperature which can be explained by an additional contribution of the magnetization to the Landau free energy. At the waste vector of the strongest phonon softening a central peak occurs. A second elastic peak, with the same temperature behavior, appears at xi approximate to 0.17. The relation...... of these elastic precursors to the low-temperature structure is discussed.......Low-energy phonons were studied in the ferromagnetic and paramagnetic phases of the Heusler alloy Ni2MnGa. The investigated sample shows a martensitic phase transformation with a transition temperature T-M approximate to 284 K, only about 80 K below the Curie temperature. Therefore, premartensitic...

  15. Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers

    International Nuclear Information System (INIS)

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-01-01

    Partial CuInGaSe 2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO x buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide

  16. Ionization effects on Cu(In, Ga)Se{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Shirou; Imaizumi, Mitsuru [Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0031 (Japan); Ishizuka, Shogo; Shibata, Hajime [Institute of National Advanced Industrial Science and Technology, 1-1 Umezono, Tsukuba 305-8568 (Japan); Okuda, Shuichi [Osaka Prefecture University, 1-2 Gakuenmachi, Sakai 599-8570 (Japan)

    2017-06-15

    Cu (In, Ga) Se{sub 2} (CIGS) solar cells were irradiated with 60, 100, and 250 keV electrons to reveal the characteristics of radiation induced defects. Electrons with less than 200 keV energy cannot generate any displacement defects in CIGS materials. In addition, a low amount of the electrons can improve the roll-over behavior in current-voltage characteristics of CIGS solar cells. However, the deterioration of the electrical performance in CIGS solar cells irradiated with a high amount of electrons was observed. The deterioration rate on the cells irradiated with lower-energy electrons was higher than that induced by electrons with higher-energy. The degradation curve of J{sub SC} based on the ionizing dose estimated from the ionizing energy loss model does not depend on the energy of electrons. Therefore, it implies that the electrons can degrade CIGS solar cells due to the ionization effect. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Damp Heat Treatment of Cu(In,GaSe2 Solar Cells with Different Sodium Content

    Directory of Open Access Journals (Sweden)

    Felix Daume

    2013-11-01

    Full Text Available Long term stability is crucial to maturing any photovoltaic technology. We have studied the influence of sodium, which plays a key role in optimizing the performance of Cu(In,GaSe2 (CIGSe solar cells, on the long-term stability of flexible CIGSe solar cells on polyimide foil. The standardized procedure of damp heat exposure (85% relative humidity at 85 °C was used to simulate aging of the unencapsulated cells in multiple time steps while they were characterized by current-voltage analysis, capacitance-voltage profiling, as well as electroluminescence imaging. By comparing the aging process to cells that were exposed to heat only, it could be confirmed that moisture plays the key role in the degradation process. We found that cells with higher sodium content suffer from a more pronounced degradation. Furthermore, the experimental results indicate the superposition of an enhancing and a deteriorating mechanism during the aging process. We propose an explanation based on the corrosion of the planar contacts of the solar cell.

  18. CuInGaSe{sub 2} nanoparticles by pulsed laser ablation in liquid medium

    Energy Technology Data Exchange (ETDEWEB)

    Mendivil, M.I.; García, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Avellaneda, D. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); and others

    2015-12-15

    Highlights: • CIGS nanocolloids were synthesized using PLAL technique. • Characterized their morphology, structure, composition and optical properties. • Morphologies were dependent on ablation wavelength and liquid medium. • Optical absorption and bandgap of these nanocolloids were tunable. - Abstract: Pulsed laser ablation in liquid medium (PLALM) is a nanofabrication technique to produce complex nanostructures. CuInGaSe{sub 2} (CIGS) is an alloy with applications in photovoltaic industry. In this work, we studied the effects of laser ablation wavelength, energy fluence and liquid medium on the properties of the CIGS nanoparticles synthesized by PLALM. The nanoparticles obtained were analyzed by transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED), X-ray photoelectron spectroscopy (XPS) and UV–vis absorption spectroscopy. XPS results confirmed the chemical states and composition of the ablated products. TEM analysis showed different morphologies for the nanomaterials obtained in different liquid media and ablation wavelengths. The optical properties for these CIGS nanocolloids were analyzed using UV–vis absorption spectroscopy. The results demonstrated the use of PLALM as a useful synthesis technique for nanoparticles of quaternary photovoltaic materials.

  19. Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules

    Science.gov (United States)

    Yamaguchi, Seira; Jonai, Sachiko; Hara, Kohjiro; Komaki, Hironori; Shimizu-Kamikawa, Yukiko; Shibata, Hajime; Niki, Shigeru; Kawakami, Yuji; Masuda, Atsushi

    2015-08-01

    Potential-induced degradation (PID) of Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) modules fabricated from integrated submodules is investigated. PID tests were performed by applying a voltage of -1000 V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. A degraded module can recover from its performance losses by applying +1000 V to connected submodule interconnector ribbons from an Al plate placed on the test module.

  20. Effect of mineral-enriched diet and medicinal herbs on Fe, Mn, Zn, and Cu uptake in chicken

    Directory of Open Access Journals (Sweden)

    Stef Ducu

    2012-03-01

    Full Text Available Abstract Background The goal of our study was to evaluate the effects of different medicinal herbs rich in polyphenol (Lemon balm, Sage, St. John's wort and Small-flowered Willowherb used as dietary supplements on bioaccumulation of some essential metals (Fe, Mn, Zn and Cu in different chicken meats (liver, legs and breast. Results In different type of chicken meats (liver, legs and breast from chickens fed with diets enriched in minerals and medicinal herbs, beneficial metals (Fe, Mn, Zn and Cu were analysed by flame atomic absorption spectrometry. Fe is the predominant metal in liver and Zn is the predominant metal in legs and breast chicken meats. The addition of metal salts in the feed influences the accumulations of all metals in the liver, legs and breast chicken meat with specific difference to the type of metal and meat. The greatest influences were observed in legs meat for Fe and Mn. Under the influence of polyphenol-rich medicinal herbs, accumulation of metals in the liver, legs and breast chicken meat presents specific differences for each medicinal herb, to the control group that received a diet supplemented with metal salts only. Great influence on all metal accumulation factors was observed in diet enriched with sage, which had significantly positive effect for all type of chicken meats. Conclusions Under the influence of medicinal herbs rich in different type of polyphenol, accumulation of metals in the liver, legs and breast chicken meat presents significant differences from the group that received a diet supplemented only with metal salts. Each medicinal herb from diet had a specific influence on the accumulation of metals and generally moderate or poor correlations were observed between total phenols and accumulation of metals. This may be due to antagonism between metal ions and presence of other chelating agents (amino acids and protein from feeding diets which can act as competitor for complexation of metals and influence

  1. Martensitic transformation in NiMnGa single crystals: numerical simulations and experiments

    Czech Academy of Sciences Publication Activity Database

    Arndt, M.; Griebel, M.; Novák, Václav; Roubíček, Tomáš; Šittner, P.

    2006-01-01

    Roč. 22, č. 10 (2006), s. 1943-1961 ISSN 0749-6419 R&D Projects: GA AV ČR IAA1075402 Institutional research plan: CEZ:AV0Z10750506; CEZ:AV0Z10100520 Keywords : phase transformation * shape memory alloys * microstructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.113, year: 2006

  2. Microprobe analysis, iono- and photo-luminescence of Mn2+ activated ZnGa2O4 fibres

    International Nuclear Information System (INIS)

    Santos, N.F.; Fernandes, A.J.S.; Alves, L.C.; Sobolev, N.A.; Alves, E.; Lorenz, K.; Costa, F.M.; Monteiro, T.

    2013-01-01

    Cubic ZnGa 2 O 4 fibres have been grown by the laser floating zone technique with different pulling rates. In fibres activated with manganese ions, the room temperature photo- and iono-luminescence is dominated by an intense green emission which is observed by the naked eye. The green band is due to an overlap of the 4 T 1 → 6 A 1 intraionic transitions of the Mn 2+ ions in different sites in the gallate host. The fibres’ photoluminescence spectra have been found to be dependent on the excitation energy. Additionally, the intensity of the green photo- and iono-luminescence is strongly sensitive to the measurement temperature and proton irradiation time. Micro PIXE analysis was used in order to verify the homogeneous distribution of the Mn luminescence activators and determine its concentration as well as for verification of impurity contents that may have been incorporated during the fibres growth. The potential of ionoluminescence measurements for characterization of optical materials is discussed

  3. Reducción catalítica de NOx con Pt soportado sobre zeolitas MFI modificadas con Cu, Co, Fe, Mn.

    Directory of Open Access Journals (Sweden)

    Sarah Briceño

    2008-05-01

    Full Text Available The selective catalytic reduction of NO by propane in the presence of excess oxygen has been studied over catalysts based on Pt supported on Fe-ZSM-5, Co-ZSM-5, Cu- ZSM-5 and MnZSM-5. Pure Pt based catalysts are highly active, but produce large amounts of N2O. The bimetallic catalyst was found to offer wider temperature window than that of monocatalysts, and show a synergistic effect by combining high stability and activity of Pt catalysts with the high N2 selectivity of Fe, Co, Cu, Mn supported on MFI catalysts.

  4. Raman spectroscopy of DNA-metal complexes. I. Interactions and conformational effects of the divalent cations: Mg, Ca, Sr, Ba, Mn, Co, Ni, Cu, Pd, and Cd.

    OpenAIRE

    Duguid, J.; Bloomfield, V. A.; Benevides, J.; Thomas, G. J.

    1993-01-01

    Interactions of divalent metal cations (Mg2+, Ca2+, Ba2+, Sr2+, Mn2+, Co2+, Ni2+, Cu2+, Pd2+, and Cd2+) with DNA have been investigated by laser Raman spectroscopy. Both genomic calf-thymus DNA (> 23 kilobase pairs) and mononucleosomal fragments (160 base pairs) were employed as targets of metal interaction in solutions containing 5 weight-% DNA and metal:phosphate molar ratios of 0.6:1. Raman difference spectra reveal that transition metal cations (Mn2+, Co2+, Ni2+, Cu2+, Pd2+, and Cd2+) ind...

  5. Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S2 based solar cells

    Science.gov (United States)

    Merdes, S.; Sáez-Araoz, R.; Ennaoui, A.; Klaer, J.; Lux-Steiner, M. Ch.; Klenk, R.

    2009-11-01

    Progress in fabricating Cu(In,Ga)S2 based solar cells with Zn(S,O) buffer is presented. An efficiency of 12.9% was achieved. Using spectral response, current-voltage and temperature dependent current-voltage measurements, current transport in this junction was studied and compared to that of a highly efficient CdS/Cu(In,Ga)S2 solar cell with a special focus on recombination mechanisms. Independently of the buffer type and despite the difference in band alignment of the two junctions, interface recombination is found to be the main recombination channel in both cases. This was unexpected since it is generally assumed that a cliff facilitates interface recombination while a spike suppresses it.

  6. Ultrafast pump-probe reflectance spectroscopy: Why sodium makes Cu(In,Ga)Se2 solar cells better

    KAUST Repository

    Eid, Jessica

    2015-04-14

    Although Cu(In,Ga)Se2 (CIGS) solar cells have the highest efficiency of any thin-film solar cell, especially when sodium is incorporated, the fundamental device properties of ultrafast carrier transport and recombination in such cells remain not fully understood. Here, we explore the dynamics of charge carriers in CIGS absorber layers with varying concentrations of Na by femtosecond (fs) broadband pump-probe reflectance spectroscopy with 120 fs time resolution. By analyzing the time-resolved transient spectra in a different time domain, we show that a small amount of Na integrated by NaF deposition on top of sputtered Cu(In,Ga) prior to selenization forms CIGS, which induces slower recombination of the excited carriers. Here, we provide direct evidence for the elongation of carrier lifetimes by incorporating Na into CIGS.

  7. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

    DEFF Research Database (Denmark)

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi

    2013-01-01

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The tra...

  8. Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

    DEFF Research Database (Denmark)

    Kovács, A.; Sadowski, J.; Kasama, Takeshi

    2013-01-01

    The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate ...

  9. Lattice constant changes leading to significant changes of the spin-gapless features and physical nature in a inverse Heusler compound Zr2MnGa

    Science.gov (United States)

    Wang, Xiaotian; Cheng, Zhenxiang; Khenata, Rabah; Wu, Yang; Wang, Liying; Liu, Guodong

    2017-12-01

    The spin-gapless semiconductors with parabolic energy dispersions [1-3] have been recently proposed as a new class of materials for potential applications in spintronic devices. In this work, according to the Slater-Pauling rule, we report the fully-compensated ferrimagnetic (FCF) behavior and spin-gapless semiconducting (SGS) properties for a new inverse Heusler compound Zr2MnGa by means of the plane-wave pseudo-potential method based on density functional theory. With the help of GGA-PBE, the electronic structures and the magnetism of Zr2MnGa compound at its equilibrium and strained lattice constants are systematically studied. The calculated results show that the Zr2MnGa is a new SGS at its equilibrium lattice constant: there is an energy gap between the conduction and valence bands for both the majority and minority electrons, while there is no gap between the majority electrons in the valence band and the minority electrons in the conduction band. Remarkably, not only a diverse physical nature transition, but also different types of spin-gapless features can be observed with the change of the lattice constants. Our calculated results of Zr2MnGa compound indicate that this material has great application potential in spintronic devices.

  10. Enhanced electrochemical performances of LiNi0.5Mn1.5O4 by surface modification with Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Zhao G.

    2017-01-01

    Full Text Available 5V spinel LiNi0.5Mn1.5O4 cathode is prepared by traditional solid-state method and nano-Cu particles were derived from a chemical reduction process. The effect of Cu-coating on the electrochemical performances of LiNi0.5Mn1.5O4 cells, in a wide operation temperature range (-10°C, 25°C, 60°C, is investigated systematically by the charge/discharge testing, cyclic voltammograms and impedance spectroscopy, respectively. The results demonstrate that the modified material exhibits remarkably enhanced electrochemical reversibility and stability. Cu-coated material has much lower surface and charge transfer resistances and shows a higher lithium diffusion rate. The Cu coating layer as a highly efficient lithium ion conductor, acted as a highly efficient protector to restrain the contact loss.

  11. The competing roles of i-ZnO in Cu(In,Ga)Se2 solar cells

    NARCIS (Netherlands)

    Williams, B.L.; Zardetto, V.; Kniknie, B.; Verheijen, M.A.; Kessels, W.M.M.; Creatore, M.

    2016-01-01

    The electrical role of the highly resistive and transparent (HRT) i-ZnO layer in Cu(In, Ga)Se2(CIGS) solar cells is investigated. By tuning the resistivity of atomic layer deposited (ALD) i-ZnO through the use of post-growth O2-plasma treatments, it is shown that low i-ZnO carrier densities (i.e.

  12. Direct imaging of enhanced current collection on grain boundaries of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, JunHo, E-mail: jhk@incheon.ac.kr [Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of); National Center for Photovoltaics, National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States); Kim, SeongYeon [Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of); Jiang, Chun-Sheng; Ramanathan, Kannan; Al-Jassim, Mowafak M. [National Center for Photovoltaics, National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States)

    2014-02-10

    We report on direct imaging of current collection by performing conductive atomic force microscopy (C-AFM) measurement on a complete Cu(In,Ga)Se{sub 2} solar cell. The localized current was imaged by milling away the top conductive layer of the device by repeated C-AFM scans. The result exhibits enhanced photocurrent collection on grain boundaries (GBs) of CIGS films, consistent with the argument for electric-field-assisted carrier collection on the GBs.

  13. Evolution of Electronic Properties of (Cu(In,Ga)Se2 (CIGS)-Based Solar Cells During a 3-Stage Growth Process: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    AbuShama, J. A.; Johnston, S.; Ahrenkiel, R.; Crandall, R.; Young, D.; Noufi, R.

    2003-04-01

    We investigated the electronic properties of ZnO/CdS/CIGS /Mo/SLG polycrystalline thin-film solar cells with compositions ranging from Cu-rich to In(Ga)-rich by deep-level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements. This compositional change represents the evolution of the film during growth by the 3-stage process. Two sets (four samples each) of CIGS thin films were prepared with Ga/(In+Ga) ratios of~0.3 (low Ga) and~0.6 (high Ga). The Cu/(In+Ga) ratio ranges from 1.24 (Cu-rich) to 0.88 (In(Ga)-rich). The films were treated with NaCN to remove the Cu2-xSe phase where needed. Key results include: (1) For low-Ga devices, DLTS data show that acceptor-like traps dominate in samples where CIGS grains do not go through the Cu-rich to In(Ga)-rich transition, whereas donor-like traps dominate in In(Ga)-rich samples. Therefore, we see a clear transformation of defects from acceptor-like to donor-like traps. The activation energies of these traps range from 0.12 to 0.63 eV. We also observed that NaCN treatment eliminates a deep minority trap in the In(Ga)-rich devices, (2) For high-Ga devices, only majority-carrier traps were detected. These traps again range from shallow to deep, (3) The carrier concentration around the junction and the density of traps decrease as the CIGS becomes more In(Ga)-rich.

  14. Elastic constants of non-modulated Ni-Mn-Ga martensite

    Czech Academy of Sciences Publication Activity Database

    Sedlák, Petr; Seiner, Hanuš; Bodnárová, Lucie; Heczko, Oleg; Landa, Michal

    2017-01-01

    Roč. 136, July (2017), s. 20-23 ISSN 1359-6462 R&D Projects: GA ČR GA17-00062S Institutional support: RVO:61388998 ; RVO:68378271 Keywords : acoustic methods * elastic behavior * ferromagnetic shape memory alloys * martensitic phase transformation Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 3.747, year: 2016 http://ac.els-cdn.com/S1359646217301768/1-s2.0-S1359646217301768-main.pdf?_tid=9b99b306-4a83-11e7-8ec6-00000aacb35e&acdnat=1496731657_35d3b5f3132e926d5bc8c6043961bb6d

  15. Nano-sized quaternary CuGa2In3S8 as an efficient photocatalyst for solar hydrogen production

    KAUST Repository

    Kandiel, Tarek

    2014-09-03

    The synthesis of quaternary metal sulfide (QMS) nanocrystals is challenging because of the difficulty to control their stoichiometry and phase structure. Herein, quaternary CuGa2In3S8 photocatalysts with a primary particle size of ≈4nm are synthesized using a facile hot-injection method by fine-tuning the sulfur source injection temperature and aging time. Characterization of the samples reveals that quaternary CuGa2In3S8 nanocrystals exhibit n-type semiconductor characteristics with a transition band gap of ≈1.8eV. Their flatband potential is located at -0.56V versus the standard hydrogen electrode at pH6.0 and is shifted cathodically by 0.75V in solutions with pH values greater than 12.0. Under optimized conditions, the 1.0wt% Ru-loaded CuGa2In3S8 photocatalyst exhibits a photocatalytic H2 evolution response up to 700nm and an apparent quantum efficiency of (6.9±0.5)% at 560nm. These results indicate clearly that QMS nanocrystals have great potential as nano-photocatalysts for solar H2 production. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Tesařová, N.; Ostatnický, T.; Novák, Vít; Olejník, Kamil; Šubrt, J.; Reichlová, Helena; Ellis, C.T.; Mukherjee, A.; Lee, J.; Sipahi, G.M.; Sinova, Jairo; Hamrle, J.; Jungwirth, Tomáš; Němec, P.; Cerne, J.; Výborný, Karel

    2014-01-01

    Roč. 89, č. 8 (2014), , , "085203-1"-"085203-14" ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : ferromagnetic semiconductors * magneto-optics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.736, year: 2014

  17. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Berndt, P.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)]. E-mail: pearl.berndt@nmmu.ac.za; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Branch, M.S. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Kirmse, H. [Institute of Physics, Chair of Crystallography, Humboldt University of Berlin, Berlin (Germany); Neumann, W. [Institute of Physics, Chair of Crystallography, Humboldt University of Berlin, Berlin (Germany); Weber, J. [Institute for Applied Physics-Semiconductor Physics, University of Technology, Dresden (Germany)

    2007-05-31

    In this study, various CuGaS{sub 2} layers were grown on GaAs (001) substrates using metalorganic vapour phase epitaxy, for the purpose of studying the effect of sulphur-termination of the substrate on layer quality. The resultant films were investigated using X-ray diffractometry, and transmission electron microscopy, with high-resolution transmission electron microscopy providing additional insights into crystallite growth on the control substrates. This paper will demonstrate that sulphur-termination limits substrate degradation. In the absence of sulphur-termination, atypical three-dimensional MOVPE growth is observed, with epitaxial crystallites varying in size from 10 nm to 200 nm. Substrate degradation inhibits lateral growth at the interface resulting in amorphous regions, cavities, and epitaxial crystallites demonstrating overgrowth into mushroom-like structures.

  18. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS2 thin films

    International Nuclear Information System (INIS)

    Berndt, P.R.; Botha, J.R.; Branch, M.S.; Leitch, A.W.R.; Kirmse, H.; Neumann, W.; Weber, J.

    2007-01-01

    In this study, various CuGaS 2 layers were grown on GaAs (001) substrates using metalorganic vapour phase epitaxy, for the purpose of studying the effect of sulphur-termination of the substrate on layer quality. The resultant films were investigated using X-ray diffractometry, and transmission electron microscopy, with high-resolution transmission electron microscopy providing additional insights into crystallite growth on the control substrates. This paper will demonstrate that sulphur-termination limits substrate degradation. In the absence of sulphur-termination, atypical three-dimensional MOVPE growth is observed, with epitaxial crystallites varying in size from 10 nm to 200 nm. Substrate degradation inhibits lateral growth at the interface resulting in amorphous regions, cavities, and epitaxial crystallites demonstrating overgrowth into mushroom-like structures

  19. The influence of growth parameters on the structure and composition of CuGaS{sub 2} epilayers grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Branch, M.S. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)]. E-mail: Matthew.Branch@nmmu.ac.za; Berndt, P.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Weber, J. [Institute for Low Temperature Physics, University of Technology, D-01062 Dresden (Germany)

    2006-04-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS{sub 2} is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac){sub 2}.Et{sub 3}N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac){sub 2}.Et{sub 3}N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS{sub 2}, yet enhance the formation of Ga{sub x}S{sub y} phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material.

  20. Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells.

    Science.gov (United States)

    Lee, Chang-Soo; Larina, Liudmila; Shin, Young-Min; Al-Ammar, Essam A; Ahn, Byung Tae

    2012-04-14

    The electronic band structure at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface was investigated for its potential application in Cd-free Cu(In,Ga)Se(2) thin film solar cells. Zn(1-x)Mg(x)O thin films with various Mg contents were grown by atomic layer deposition on Cu(In(0.7)Ga(0.3))Se(2) absorbers, which were deposited by the co-evaporation of Cu, In, Ga, and Se elemental sources. The electron emissions from the valence band and core levels were measured by a depth profile technique using X-ray and ultraviolet photoelectron spectroscopy. The valence band maximum positions are around 3.17 eV for both Zn(0.9)Mg(0.1)O and Zn(0.8)Mg(0.2)O films, while the valence band maximum value for CIGS is 0.48 eV. As a result, the valence band offset value between the bulk Zn(1-x)Mg(x)O (x = 0.1 and x = 0.2) region and the bulk CIGS region was 2.69 eV. The valence band offset value at the Zn(1-x)Mg(x)O/CIGS interface was found to be 2.55 eV after considering a small band bending in the interface region. The bandgap energy of Zn(1-x)Mg(x)O films increased from 3.25 to 3.76 eV as the Mg content increased from 0% to 25%. The combination of the valence band offset values and the bandgap energy of Zn(1-x)Mg(x)O films results in the flat (0 eV) and cliff (-0.23 eV) conduction band alignments at the Zn(0.8)Mg(0.2)O/Cu(In(0.7)Ga(0.3))Se(2) and Zn(0.9)Mg(0.1)O/Cu(In(0.7)Ga(0.3))Se(2) interfaces, respectively. The experimental results suggest that the bandgap energy of Zn(1-x)Mg(x)O films is the main factor that determines the conduction band offset at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface. Based on these results, we conclude that a Zn(1-x)Mg(x)O film with a relatively high bandgap energy is necessary to create a suitable conduction band offset at the Zn(1-x)Mg(x)O/CIGS interface to obtain a robust heterojunction. Also, ALD Zn(1-x)Mg(x)O films can be considered as a promising alternative buffer material to replace the toxic CdS for environmental safety.