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Sample records for cu ga mn

  1. First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

    Science.gov (United States)

    Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

    2017-02-01

    We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

  2. Electronic, magnetic, elastic and thermodynamic properties of Cu{sub 2}MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Sukriti [Department of Physics, Government Kamla Raja Girls Autonomous Post Graduate College, Gwalior 474001, Madhya Pradesh (India); Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior 474 011, Madhya Pradesh (India); Gupta, Dinesh C., E-mail: sosfizix@gmail.com [Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior 474 011, Madhya Pradesh (India)

    2016-08-01

    The full-potential linearized augmented plane wave method in the stable Fm-3m phase has been implemented to investigate the structural, elastic, magnetic and electronic properties of Cu{sub 2}MnGa. The optimized equilibrium lattice parameter in stable phase is found to be 5.9495 Å. By the spin resolved density of states calculations, we have shown that the exchange splitting due to Mn atom is the main reason of ferromagnetic behavior of Cu{sub 2}MnGa. The absence of energy gap in both the spin channels predicts that the material is metallic. The total and partial density of states, elastic constants, Shear, Bulk and Young’s moduli, Zener isotropy factor, Cauchy pressure, Pugh's ductility, Kleinman parameter and Poisson's ratio are reported for the first time for the alloy. Cauchy's pressure and Pugh's index of ductility label Cu{sub 2}MnGa as ductile. Cu{sub 2}MnGa is found to be ferromagnetic and anisotropic in nature. The quasi-harmonic approximations have been employed to study the pressure and temperature dependent thermodynamic properties of Cu{sub 2}MnGa. - Highlights: • It is the first attempt to predict a variety of crystal properties of Cu{sub 2}MnGa. • Cu{sub 2}MnGa shows magnetism and hence can prove to be important in modern technology. • Cu{sub 2}MnGa is ductile and hence can attract attention of scientists and technologists.

  3. Atomistic spin dynamics simulations on Mn-doped GaAs and CuMn

    Energy Technology Data Exchange (ETDEWEB)

    Hellsvik, Johan, E-mail: johan.hellsvik@fysik.uu.s [Department of Physics and Materials Science, Uppsala University, Box 530, SE-751 21 Uppsala (Sweden)

    2010-01-01

    The magnetic dynamical behavior of two random alloys have been investigated in atomistic spin dynamics (ASD) simulations. For both materials, magnetic exchange parameters calculated with first principles electronic structure methods were used. From experiments it is well known that CuMn is a highly frustrated magnetic system and a good manifestation of a Heisenberg spin glass. In our ASD simulations the behavior of the autocorrelation function indicate spin glass behavior. The diluted magnetic semiconductor (DMS) Mn-doped GaAs is engineered with hopes of high enough Curie temperatures to operate in spintronic devices. Impurities such as As antisites and Mn interstitials change the exhange couplings from being mainly ferromagnetic to also have antiferromagnetic components. We explore how the resulting frustration affects the magnetization dynamics for a varying rate of As antisites.

  4. Intermartensitic transitions in Ni-Mn-Fe-Cu-Ga Heusler alloys

    International Nuclear Information System (INIS)

    Khan, Mahmud; Gautam, Bhoj; Pathak, Arjun; Dubenko, Igor; Stadler, Shane; Ali, Naushad

    2008-01-01

    A series of Fe doped Ni 2 Mn 0.75-x Fe x Cu 0.25 Ga Heusler alloys have been investigated by means of x-ray diffraction, magnetizations, thermal expansion, and electrical resistivity measurements. In Ni 2 Mn 0.75 Cu 0.25 Ga, martensitic and ferromagnetic transitions occur at the same temperature. Partial substitution of Mn by Fe results in a decrease of the martensitic transition temperature, T M , and an increase of the ferromagnetic transition temperature, T C , resulting in separation of the two transitions. In addition to the martensitic transition, complete thermoelastic intermartensitic transformations have been observed in the Fe doped Ni 2 Mn 0.75-x Fe x Cu 0.25 Ga samples with x>0.04. An unusual transition is observed in the alloy with x = 0.04. The magnetization curve as a function of increasing temperature shows only one first-order transition in the temperature range 5-400 K, which is identified as a typical coupled magnetostructural martensitic transformation. The magnetization curve as a function of decreasing temperature shows three different transitions, which are characterized as the ferromagnetic transition, the martensitic transition and the intermartensitic transition.

  5. Magnetic refrigeration capabilities of magnetocaloric Ni2Mn:75Cu:25Ga

    Science.gov (United States)

    Mishra, S. K.; Jenkins, C. A.; Dubenko, I.; Samanta, T.; Ali, N.; Roy, S.

    2013-03-01

    Doping-driven competition between energetically similar ground states leads to many exciting materials phenomena such as the emergence of high-Tc superconductivity, diluted magnetic semiconductors, and colossal magnetoresistance. Doped Ni2MnGa Heusler alloy, which is a multifunctional ferromagnetic alloy with various exotic physical properties demonstrates this notion of rich phenomenology via modified ground spin states. Adopting this generic concept, here we will present a novel doped Ni2Mn.75Cu.25Ga alloy that offers unprecedented co-existence of the magnetocaloric effect and fully controlled ferromagnetism at room temperature. Application of site engineering enables us to manipulate the ground spin state that leads to the decrease in magnetic transition temperature and also increases the delocalization of the Mn magnetism. SQUID magnetometery suggests that Cu doping enhances the saturation magnetization, coercive field and clarity of magnetic hysteresis loops. By exploiting x-ray absorption techniques and measuring element specific magnetic hysteresis loops, here we will describe the microscopic origin of enhnaced magnetocaloric properties and d-d interaction driven charge transfer effects in Ni2Mn.75Cu.25Ga This work was supported by DOE Grant No. DE-FG02-06ER46291

  6. The effects of small metal additions (Co, Cu, Ga, Mn, Al, Bi, Sn) on the magnetocaloric properties of the Gd5Ge2Si2 alloy

    Czech Academy of Sciences Publication Activity Database

    Shull, R. D.; Provenzano, V.; Shapiro, A. J.; Fu, A.; Lufaso, M. W.; Karapetrova, J.; Kletetschka, Günther; Mikula, V.

    2006-01-01

    Roč. 99, č. 8 (2006), s. 8-8 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z30130516 Keywords : magnetocaloric * (Co, Cu, Ga, Mn, Al, Bi, Sn) additions * Cryogenic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.316, year: 2006

  7. Magnetic properties of Ni-Mn-Ga-Co-Cu tetragonal martensites exhibiting magnetic shape memory effect

    Czech Academy of Sciences Publication Activity Database

    Rameš, Michal; Heczko, Oleg; Sozinov, A.; Ullakko, K.; Straka, Ladislav

    2018-01-01

    Roč. 142, Jan (2018), s. 61-65 ISSN 1359-6462 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : ferromagnetic shape memory alloy * magnetic anisotropy * martensitic phase transformation * Heusler phases * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.747, year: 2016

  8. La0⋅ 9Sr0⋅ 1Ga0⋅ 8M0⋅ 2O3–δ (M= Mn, Co, Ni, Cu or Zn ...

    Indian Academy of Sciences (India)

    Perovskite oxides of the general formula, La0.9Sr0.1Ga0.8M0.2O3– for M = Mn, Co, Ni, Cu and Zn, have been prepared and investigated. All the oxides exhibit high electrical conductivities ( ∼ 10–2 S/cm at 800°C) comparable to that of the best perovskite oxide ion conductor, La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM) ( ...

  9. Reversible magnetic-field-induced martensitic transformation over a wide temperature window in Ni42-xCoxCu8Mn37Ga13 alloys

    Science.gov (United States)

    Hua, Hui; Wang, Jingmin; Jiang, Chengbao; Xu, Huibin

    2018-05-01

    Ni42-xCoxCu8Mn37Ga13 (0 ≤ x ≤ 14) alloys are reported to exhibit a magnetostructural transition from weakly-magnetic martensite to ferromagnetic austenite over a rather wide temperature window ranging from 200 K to 380 K. Simultaneously a large magnetization change Δσ of up to 105 Am2 kg-1 is obtained at the martensitic transformation. A reversible magnetic-field-induced martensitic transformation is realized, resulting in a large magnetocaloric effect related to the high magnetic entropy change with a broad working temperature span. This work shows how it is possible to effectively tailor the magnetostructural transition in Ni-Mn-Ga alloys so as to achieve a reversible magnetic-field-induced martensitic transformation and associated functionalities.

  10. Severe plastic deformation of melt-spun shape memory Ti2NiCu and Ni2MnGa alloys

    International Nuclear Information System (INIS)

    Pushin, Vladimir G.; Korolev, Alexander V.; Kourov, Nikolai I.; Kuntsevich, Tatiana E.; Valiev, Eduard Z.; Yurchenko, Lyudmila I.; Valiev, Ruslan Z.; Gunderov, Dmitrii V.; Zhu, Yuntian T.

    2006-01-01

    This paper describes the influence of severe plastic deformation (SPD) on the structure, phase transformations, and physical properties of melt-spun Ti 2 NiCu-based and Ni 2 MnGa-based shape memory intermetallic alloys. It was found that the SPD by high pressure torsion (HPT) at room temperature can be effectively used for the synthesis of bulk nanostructured states in these initially submicro-grained or amorphized alloys obtained by melt-spinning method in the form of a ribbon. The subsequent low-temperature annealing of HPT-processed alloys leads to formation of homogeneous ultrafine nano-grained structure. This is connected with a very high degree and high homogeneity of deformation at SPD in the whole volume of deformed samples. (author)

  11. Strong correlation and ferromagnetism in (Ga,Mn)As and (Ga,Mn)N

    International Nuclear Information System (INIS)

    Filippetti, A.; Spaldin, N.A.; Sanvito, S.

    2005-01-01

    The band energies of the ferromagnetic diluted magnetic semiconductors (Ga,Mn)As and (Ga,Mn)N are calculated using a self-interaction-free approach which describes covalent and strongly correlated electrons without adjustable parameters. Both materials are half-metallic, although the contribution of Mn-derived d states to the bands around the Fermi energy is very different in the two cases. In (Ga,Mn)As the bands are strongly p-d hybridized, with a dominance of As p states. In contrast in (Ga,Mn)N the Fermi energy lies within three flat bands of mainly d character that are occupied by two electrons. Thus the Mn ion in (Ga,Mn)N behaves as a deep trap acceptor, with the hole at 1.39 eV above the GaN valence band top, and is in excellent agreement with the experimental data

  12. Defect-induced magnetic structure of CuMnSb

    Czech Academy of Sciences Publication Activity Database

    Máca, František; Kudrnovský, Josef; Drchal, Václav; Turek, I.; Stelmakhovych, O.; Beran, Přemysl; Llobet, A.; Martí, Xavier

    2016-01-01

    Roč. 94, č. 9 (2016), 1-9, č. článku 094407. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 ; RVO:61389005 Keywords : CuMnSb * electronic structure * defects * magnetic order * ab initio calculations * neutron diffraction analysis Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  13. Comparing magnetostructural transitions in Ni{sub 50}Mn{sub 18.75}Cu{sub 6.25}Ga{sub 25} and Ni{sub 49.80}Mn{sub 34.66}In{sub 15.54} Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dubenko, Igor [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Granovsky, Alexander [Faculty of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Lahderanta, Erkki [Lappeenranta University of Technology, 53851 (Finland); Kashirin, Maxim; Makagonov, Vladimir [Voronezh State Technical University, Voronezh 394026 (Russian Federation); Aryal, Anil; Quetz, Abdiel; Pandey, Sudip [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Rodionov, Igor [Faculty of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Samanta, Tapas; Stadler, Shane [Department of Physics & Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Mazumdar, Dipanjan, E-mail: dmazumdar@siu.edu [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Ali, Naushad [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States)

    2016-03-01

    The crystal structure, magnetic and transport properties, including resistivity and thermopower, of Ni{sub 50}Mn{sub 18.75}Cu{sub 6.25}Ga{sub 25} and Ni{sub 49.80}Mn{sub 34.66}In{sub 15.54} Heusler alloys were studied in the (10–400) K temperature interval. We show that their physical properties are remarkably different, thereby pointing to different origin of their magnetostructural transition (MST). A Seebeck coefficient (S) was found to pass minimum of about −20 µV/K in respect of temperature for both compounds. It was shown that MST observed for both compounds results in jump-like changes in S for Ga-based compound and jump in resistivity of about 20 and 200 µΩ cm for Ga and In –based compounds, respectively. The combined analyzes of the present results with that from literature show that the density of states at the Fermi level does not change strongly at the MST in the case of Ni–Mn–In alloys as compared to that of Ni–Mn–Ga. - Graphical abstract: Temperature dependencies of resistivity for Ni{sub 50}Mn{sub 18.75}Cu{sub 6.25}Ga{sub 25} and Ni{sub 49.80}Mn{sub 34.66}In{sub 15.54} obtained on heating (open symbols) and cooling (closed symbols). Arrows indicate the temperature of direct (T{sub M}) and inverse (T{sub A}) martensitic transitions and ferromagnetic ordering of the austenitic (T{sub C}) and martensitic (T{sub CM}) phases. The T{sub CM}=T{sub A}/T{sub M} in the case of Ga-based alloy. - Highlights: • Magnetostructural transitions (MST) in two compounds with same parent material. • The figure exemplifies how sensitive MST properties are to the density of states. • Proper understanding is required for utilizing these multifunctional materials.

  14. Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

    CERN Document Server

    AUTHOR|(CDS)2093111; Wahl, Ulrich; Augustyns, Valerie; Silva, Daniel; Granadeiro Costa, Angelo Rafael; Houben, K; Edmonds, Kevin W; Gallagher, BL; Campion, RP; Van Bael, MJ; Castro Ribeiro Da Silva, Manuel; Martins Correia, Joao; Esteves De Araujo, Araujo Joao Pedro; Temst, Kristiaan; Vantomme, André; Da Costa Pereira, Lino Miguel

    2015-01-01

    We determined the lattice location of Mn in ferromagnetic (Ga,Mn)As using the electron emission channeling technique. We show that interstitial Mn occupies the tetrahedral site with As nearest neighbors (TAs) both before and after thermal annealing at 200 °C, whereas the occupancy of the tetrahedral site with Ga nearest neighbors (TGa) is negligible. TAs is therefore the energetically favorable site for interstitial Mn in isolated form as well as when forming complexes with substitutional Mn. These results shed new light on the long standing controversy regarding TAs versus TGa occupancy of interstitial Mn in (Ga,Mn)As.

  15. Magnetic anisotropy in GaMnAs; Magnetische Anisotropie in GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim

    2009-07-02

    The goal of the present work was the detailed investigation of the impact of parameters like vertical strain, hole concentration, substrate orientation and patterning on the MA in GaMnAs. At first a method is introduced enabling us to determine the MA from angle-dependent magnetotransport measurements. This method was used to analyze the impact of vertical strain {epsilon}{sub zz} on the MA in a series of GaMnAs layers with a Mn content of 5% grown on relaxed InGaAs-templates. While hole concentration and Curie temperature were found to be unaffected by vertical strain, a significant dependence of the MA on {epsilon}{sub zz} was found. The most pronounced dependence was observed for the anisotropy parameter B{sub 2} {sub perpendicular} {sub to}, representing the intrinsic contribution to the MA perpendicular to the layer plane. For this parameter a linear dependence on {epsilon}{sub zz} was found, resulting in a strain-induced transition of the magnetic easy axis with increasing strain from in-plane to out-of-plane at {epsilon}{sub zz} {approx} -0.13%. Post-growth annealing of the samples leads to an outdiffusion and/or regrouping of the highly mobile Mn interstitial donor defects, resulting in an increase in both p and T{sub C}. For the annealed samples, the transition from in-plane to out-of-plane easy axis takes place at {epsilon}{sub zz} {approx} -0.07%. From a comparison of as-grown and annealed samples, B{sub 2} {sub perpendicular} {sub to} was found to be proportional to both p and {epsilon}{sub zz}, B{sub 2} {sub perpendicular} {sub to} {proportional_to} p .{epsilon}{sub zz}. To study the influence of substrate orientation on the magnetic properties of GaMnAs, a series of GaMnAs layers with Mn contents up to 5% was grown on (001)- and (113)A-oriented GaAs substrates. The hole densities and Curie temperatures, determined from magnetotransport measurements, are drastically reduced in the (113)A layers. The differences in the magnetic properties of (113)A- and

  16. Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

    DEFF Research Database (Denmark)

    Sadowski, Janusz; Domagala, Jaroslaw Z.; Mathieu, Roland

    2011-01-01

    °C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270°C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400°C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn......,Ga)As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals......X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400°C) and high-temperature (560°C and 630...

  17. Epitaxy of (Ga,Mn)As; Epitaxie von (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Utz, Martin

    2012-09-14

    The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux calibration. Also the most important methods for the electrical characterization of GaMnAs are discussed in a critical manner by showing that the anomalous Hall Effect contributes significantly to the Hall resistance even at room temperature and that Novak's method for the termination of the Curie-temperature provides correct values for layers with low defect concentration. Furthermore it is reported on the considerable enlargement of the useable parameter space of GaMnAs which was enabled by the enhanced control over the growth process: It was possible to grow layers with a very high Manganese content of 22% and Curie temperatures of 172 K and even once were produced which showed a strong magnetic moment despite an insulating behaviour at low temperatures. A last key aspect is the growth and characterization of ultra-thin GaMnAs layers, giving prospects for gating experiments or experiments on the proximity effect as these layers combine high Curie temperatures with insulating behaviour.

  18. Magnetic properties of (Mn1-xRux)3Ga alloys

    International Nuclear Information System (INIS)

    Hori, T.; Akimitsu, M.; Miki, H.; Ohoyoama, K.; Yamaguchi, Y.

    2002-01-01

    We found that the pseudo binary alloys Mn 1-x Ru x 3 Ga, with 0.33≤x≤0.67, have an ordered b.c.c. structure. The lattice constant a is almost constant with respect to x: a=6.000 A for x=0.33 and a=5.992 A for x=0.67. For the alloy with x=0.33, i.e. Mn 2 RuGa, the magnetization is almost saturated in a field of 20 kOe. The saturation magnetization at 4.2 K is 23 emu/g, and the Curie temperature, T C , is 460 K. The T C of (Mn 1-x Ru x ) 3 Ga decreases almost linearly with increasing x, and it vanishes around x=0.67 (MnRu 2 Ga). We also determined atomic and magnetic structures from neutron diffraction experiments. The alloy Mn 2 RuGa (x=0.33) has an ordered structure of CuHg 2 Ti type; the magnetic Mn atoms mainly occupy the 4a (0,0,0) and 4d (3/4,3/4,3/4) sites. We also observed that the magnetic moments of Mn atoms on the 4a and 4d sites are antiparallel to each other; values of the magnetic moment are μ a =4.6 and μ d =3.3 μ B per Mn atom. (orig.)

  19. The Mn site in Mn-doped GaAs nanowires: an EXAFS study

    International Nuclear Information System (INIS)

    D’Acapito, F; Rovezzi, M; Boscherini, F; Jabeen, F; Bais, G; Piccin, M; Rubini, S; Martelli, F

    2012-01-01

    We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound. (paper)

  20. Composition and temperature dependence of twinning stress in non-modulated martensite of Ni-Mn-Ga-Co-Cu magnetic shape memory alloys

    Czech Academy of Sciences Publication Activity Database

    Soroka, A.; Sozinov, A.; Lanska, N.; Rameš, Michal; Straka, Ladislav; Ullakko, K.

    2018-01-01

    Roč. 144, Feb (2018), s. 52-55 ISSN 1359-6462 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : Heusler phases * martensite * ferromagnetic shape memory alloy * magnetic shape memory * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.747, year: 2016

  1. Diffusion of $^{52}$Mn in GaAs

    CERN Multimedia

    2002-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

  2. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  3. Dislocation mechanism of twinning in Ni-Mn-Ga

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Ge, Y.; Gemperlová, Juliana; Gemperle, Antonín; Hannula, S.-P.

    2012-01-01

    Roč. 5, č. 1 (2012), "1250006-1"-"1250006-4" ISSN 1793-6047 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391; GA AV ČR IAA100100920 Institutional research plan: CEZ:AV0Z10100520 Keywords : Ni-Mn-Ga shape memory alloy * martensitic transformation * in situ TEM straining Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.270, year: 2012

  4. Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape

    International Nuclear Information System (INIS)

    Nidda, H-A Krug von; Kurz, T; Loidl, A; Hartmann, Th; Klar, P J; Heimbrodt, W; Lampalzer, M; Volz, K; Stolz, W

    2006-01-01

    We report a systematic study of ferromagnetic resonance in granular GaAs:Mn/MnAs hybrids grown on GaAs(001) substrates by metal-organic vapour-phase epitaxy. The ferromagnetic resonance of the MnAs clusters can be resolved at all temperatures below T c . An additional broad absorption is observed below 60 K and is ascribed to localized charge carriers of the GaAs:Mn matrix. The anisotropy of the MnAs ferromagnetic resonance field originates from the magneto-crystalline field and demagnetization effects of the ferromagnetic MnAs clusters embedded in the GaAs:Mn matrix. Its temperature dependence basically scales with magnetization. Comparison of the observed angular dependence of the resonance field with model calculations yields the preferential orientation and shape of the clusters formed in hybrid layers of different thickness (150-1000 nm) grown otherwise at the same growth conditions. The hexagonal axes of the MnAs clusters are oriented along the four cubic GaAs space diagonals. Thin layers contain lens-shaped MnAs clusters close to the surface, whereas thick layers also contain spherical clusters in the bulk of the layer. The magnetic properties of the hexagonal MnAs clusters can be tuned by a controlled variation of the cluster shape

  5. The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN

    International Nuclear Information System (INIS)

    Kang, Joongoo; Chang, K. J.

    2007-01-01

    We perform first-principles theoretical calculations to investigate the effect of the presence of Ga vacancy on the defect and magnetic properties of Mn-doped GaN. When a Ga vacancy (V Ga ) is introduced to the Mn ions occupying the Ga lattice sites, a charge transfer occurs from the Mn d band to the acceptor levels of V Ga , and strong Mn-N bonds are formed between the Mn ion and the N atoms in the neighborhood of V Ga . The charge transfer and chemical bonding effects significantly affect the defect and magnetic properties of Mn-doped GaN. In a Mn-V Ga complex, which consists of a Ga vacancy and one Mn ion, the dangling bond orbital of the N atom involved in the Mn-N bond is electrically deactivated, and the remaining dangling bond orbitals of V Ga lead to the shallowness of the defect level. When a Ga vacancy forms a complex with two Mn ions located at a distance of about 6 A, which corresponds to the percolation length in determining the Curie temperature in diluted Mn-doped GaN, the Mn d band is broadened and the density of states at the Fermi level is reduced due to two strong Mn-N bonds. Although the broadening and depopulation of the Mn d band weaken the ferromagnetic stability between the Mn ions, the ferromagnetism is still maintained because of the lack of antiferromagnetic superexchange interactions at the percolation length

  6. GaMnAs on patterned GaAs(001) substrates: Growth and magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim; Glunk, Michael; Hummel, Thomas; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

    2007-07-01

    A new type of GaMnAs microstructures with laterally confined electronic and magnetic properties has been realized in a bottom-up procedure by growing GaMnAs films on [1 anti 10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) substrates. Previous studies on planar GaMnAs samples have revealed different incorporation of Mn and excess As in (001) and (113)A layers. Accordingly, temperature- and field-dependent magnetotransport measurements on the overgrown ridge structures clearly demonstrate the coexistence of electronic and magnetic properties specific for (001) and (113)A GaMnAs in one single sample. This introduces an additional degree of freedom in the development of new functional structures.

  7. Magnetic anisotropies of (Ga,Mn)As films and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Frank

    2011-02-02

    In this work the magnetic anisotropies of the diluted magnetic semiconductor (Ga,Mn)As were investigated experimentally. (Ga,Mn)As films show a superposition of various magnetic anisotropies which depend sensitively on various parameters such as temperature, carrier concentration or lattice strain. However, the anisotropies of lithographically prepared (Ga,Mn)As elements differ significantly from an unpatterned (Ga,Mn)As film. In stripe-shaped structures this behaviour is caused by anisotropic relaxation of the compressive lattice strain. In order to determine the magnetic anisotropies of individual (Ga,Mn)As nanostructures a combination of ferromagnetic resonance and time-resolved scanning Kerr microscopy was employed in this thesis. In addition, local changes of the magnetic anisotropy in circular and rectangular structures were visualized by making use of spatially resolved measurements. Finally, also the influence of the laterally inhomogeneous magnetic anisotropies on the static magnetic properties, such as coercive fields, was investigated employing spatially resolved static MOKE measurements on individual (Ga,Mn)As elements. (orig.)

  8. Moessbauer spectroscopy of Fe-Mn-Cu alloys

    International Nuclear Information System (INIS)

    Paduani, Clederson; Krause, Joao Carlos; Yoschida, M.I. Soares

    2004-01-01

    Full text: Although a continuous series of solid solutions exists between Cu and Mn, Fe and Cu are miscible only a few percent at higher temperatures. In moderately concentrated Cu-Mn alloys the Mn moments are bound to the long ranged antiferromagnetic order and the perpendicular components form an X-Y spin glass. Copper alloys are largely employed in various industrial applications. In this work we study the magnetic properties of iron-rich disordered Fe-Mn-Cu alloys with the bcc structure with the experimental techniques of X-ray diffraction (XRD), Moessbauer spectroscopy (MS) and thermogravimetry (TGA). We investigate the formation of a solid solution with the bcc structure as well as the effect of the composition on the structural and magnetic properties of these alloys. A Rietveld analysis of the XRD diffractograms indicate that all prepared samples are single phase and are well crystallized with a bcc structure. (author)

  9. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  10. Local Structure and Magnetism of (Ga,Mn)As

    CERN Document Server

    AUTHOR|(CDS)2093111; Temst, Kristiaan

    Throughout the years, dilute magnetic semiconductors (DMS) have emerged as promising materials for semiconductor-based spintronics. In particular, (Ga,Mn)As has become the model system in which to explore the physics of carrier-mediated ferromagnetism in semiconductors and the associated spintronic phenomena, with a number of interesting functionalities and demonstrated proof-of-concept devices. It constitutes the perfect example of how the magnetic behavior of DMS materials is strongly influenced by local structure. In this thesis, we address key aspects of the interplay between local structure and ferromagnetism of (Ga,Mn)As. We unambiguously identify the lattice site occupied by interstitial Mn as the tetrahedral interstitial site with As nearest neighbors T(As). We show, furthermore, that the T(As) is the most energetically favorable site regardless of the interstitial atom forming or not complexes with substitutional Mn. We also evaluate the thermal stability of both interstitial and substitutional Mn si...

  11. Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures

    International Nuclear Information System (INIS)

    Kong, X.; Trampert, A.; Guo, X.X.; Kolovos-Vellianitis, D.; Daeweritz, L.; Ploog, K.H.

    2005-01-01

    We report on the microstructure of (Ga,Mn)As digital ferromagnetic heterostructures grown on GaAs (001) substrates by low-temperature molecular-beam epitaxy. The Mn concentration and the As 4 /Ga beam equivalent pressure (BEP) ratio are varied in the samples containing periods of Mn sheets separated by thin GaAs spacer layers. Transmission electron microscopy studies reveal that decreasing the Mn doping concentration and reducing the BEP ratio lead to smaller composition fluctuations of Mn and more homogeneous (Ga,Mn)As layers with abrupt interfaces. Planar defects are found as the dominant defect in these heterostructures and their density is related to the magnitude of the composition fluctuation. These defects show a noticeable anisotropy in the morphologic distribution parallel to the orthogonal [110] and [110] direction. Along the [110] direction, they are stacking faults, which are preferentially formed in V-shaped pairs and nucleate at the interfaces between (Ga,Mn)As and GaAs layers. Along the [110] direction, the planar defects are isolated thin twin lamellae. The character of the planar defects and their configuration are analyzed in detail

  12. Strain-dependent magnetic anisotropy in GaMnAs on InGaAs templates

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim; Glunk, Michael; Schwaiger, Stephan; Dreher, Lukas; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

    2008-07-01

    We have systematically studied the influence of strain on the magnetic anisotropy of GaMnAs by means of HRXRD reciprocal space mapping and angle-dependent magnetotransport. For this purpose, a series of GaMnAs layers with Mn contents of {proportional_to}5% was grown by low-temperature MBE on relaxed InGaAs/GaAs templates with different In concentrations, enabling us to vary the strain in the GaMnAs layers continuously from tensile to compressive, including the unstrained state. Considering both, as-grown and annealed samples, the anisotropy parameter describing the uniaxial out-of-plane magnetic anisotropy has been found to vary linearly with hole density and strain. As a consequence, the out-of-plane direction gradually undergoes a transition from a magnetic hard axis to a magnetic easy axis from compressive to tensile strain.

  13. Antiferromagnetic MnN layer on the MnGa(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero-Sánchez, J., E-mail: guerrero@cnyn.unam.mx; Takeuchi, Noboru

    2016-12-30

    Highlights: • A ferromagnetic Gallium terminated surface is stable before N incorporation. • After N incorporation, an antiferromagnetic MnN layer becomes stable in a wide range of chemical potential. • Spin density distribution shows an antiferromagnetic/ferromagnetic (MnN/MnGa) arrangement at the surface. - Abstract: Spin polarized first principles total energy calculations have been applied to study the stability and magnetic properties of the MnGa(001) surface and the formation of a topmost MnN layer with the deposit of nitrogen. Before nitrogen adsorption, surface formation energies show a stable gallium terminated ferromagnetic surface. After incorporation of nitrogen atoms, the antiferromagnetic manganese terminated surface becomes stable due to the formation of a MnN layer (Mn-N bonding at the surface). Spin density distribution shows a ferromagnetic/antiferromagnetic arrangement in the first surface layers. This thermodynamically stable structure may be exploited to growth MnGa/MnN magnetic heterostructures as well as to look for exchange biased systems.

  14. Magnetic properties of Heusler alloy Mn2RuGe and Mn2RuGa ribbons

    International Nuclear Information System (INIS)

    Yang, Ling; Liu, Bohua; Meng, Fanbin; Liu, Heyan; Luo, Hongzhi; Liu, Enke; Wang, Wenhong; Wu, Guangheng

    2015-01-01

    Heusler alloys Mn 2 RuGe and Mn 2 RuGa have been prepared by melt-spinning method successfully. Theoretical and experimental studies reveal a ferrimagnetic ground state in the two alloys. The Curie temperatures are 303 K for Mn 2 RuGe and 272 K for Mn 2 RuGa. The calculated total spin moments of Mn 2 RuGe and Mn 2 RuGa are integral values of 2.00 μ B and 1.03 μ B , respectively. And the theoretical spin polarization ratio is also quite high. However, due to the atomic disorder in the ribbons, the saturation moments of them measured at 5 K are smaller than the calculated values, especially that of Mn 2 RuGa. This coincides with the disappearance of the superlattice reflection (111) and (200) peaks in the XRD pattern of Mn 2 RuGa. Annealing Mn 2 RuGa ribbon at 773 K can enhance the atomic ordering. Both saturation magnetic moment and Curie temperature increase obviously after the heat treatment. - Highlights: • Mn 2 RuGe and Mn 2 RuGa have been prepared by melt-spinning successfully. • Ferrimagnetic ground state has been confirmed in Mn 2 RuGe and Mn 2 RuGa. • High spin polarization has been predicted in Mn 2 RuGe. • Melt-spinning can be a possible way to adjust the atomic order of Heusler alloys

  15. Physical properties of the tetragonal CuMnAs: A first-principles study

    Czech Academy of Sciences Publication Activity Database

    Máca, František; Kudrnovský, Josef; Drchal, Václav; Carva, K.; Baláž, P.; Turek, I.

    2017-01-01

    Roč. 96, č. 9 (2017), s. 1-8, č. článku 094406. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Grant - others:GA MŠk(CZ) LM2015042 Institutional support: RVO:68378271 Keywords : first-principles calculations * defects * CuMnAs * transport properties Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  16. Spin injection from Co2MnGa into an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.

    2008-01-01

    We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifet...

  17. Electromigration in Cu(Al) and Cu(Mn) damascene lines

    Science.gov (United States)

    Hu, C.-K.; Ohm, J.; Gignac, L. M.; Breslin, C. M.; Mittal, S.; Bonilla, G.; Edelstein, D.; Rosenberg, R.; Choi, S.; An, J. J.; Simon, A. H.; Angyal, M. S.; Clevenger, L.; Maniscalco, J.; Nogami, T.; Penny, C.; Kim, B. Y.

    2012-05-01

    The effects of impurities, Mn or Al, on interface and grain boundary electromigration (EM) in Cu damascene lines were investigated. The addition of Mn or Al solute caused a reduction in diffusivity at the Cu/dielectric cap interface and the EM activation energies for both Cu-alloys were found to increase by about 0.2 eV as compared to pure Cu. Mn mitigated and Al enhanced Cu grain boundary diffusion; however, no significant mitigation in Cu grain boundary diffusion was observed in low Mn concentration samples. The activation energies for Cu grain boundary diffusion were found to be 0.74 ± 0.05 eV and 0.77 ± 0.05 eV for 1.5 μm wide polycrystalline lines with pure Cu and Cu (0.5 at. % Mn) seeds, respectively. The effective charge number in Cu grain boundaries Z*GB was estimated from drift velocity and was found to be about -0.4. A significant enhancement in EM lifetimes for Cu(Al) or low Mn concentration bamboo-polycrystalline and near-bamboo grain structures was observed but not for polycrystalline-only alloy lines. These results indicated that the existence of bamboo grains in bamboo-polycrystalline lines played a critical role in slowing down the EM-induced void growth rate. The bamboo grains act as Cu diffusion blocking boundaries for grain boundary mass flow, thus generating a mechanical stress-induced back flow counterbalancing the EM force, which is the equality known as the "Blech short length effect."

  18. Oriented Mn-doped CuO nanowire arrays

    International Nuclear Information System (INIS)

    Han, Dongqiang; Wu, Zhaofeng; Wang, Zhihe; Yang, Shaoguang

    2016-01-01

    Using anodic aluminum oxide membranes as the nanoreactors and controller, oriented nanowire arrays of the diluted magnetic semiconductor Mn-doped CuO have been successfully fabricated using Mn(NO_3)_2 · 4H_2O and Cu(NO_3)_2 · 3H_2O as the starting materials. X-ray diffraction measurements showed that the as-prepared oriented nanowire arrays are of high purity. Scanning electron microscope and transmission electron microscope studies showed the nanowires are oriented, continuous and uniform with a diameter and length of about 170 nm and several tens of micrometers, respectively, and thus of a high aspect ratio. Low-temperature magnetic measurements showed the ferromagnetic property of the oriented Mn-doped CuO nanowire arrays with the critical temperature at around 80 K, which will endow them with great potential applications in spintronics in the future. (paper)

  19. Damping behavior of polymer composites with high volume fraction of NiMnGa powders

    Science.gov (United States)

    Sun, Xiaogang; Song, Jie; Jiang, Hong; Zhang, Xiaoning; Xie, Chaoying

    2011-03-01

    Polymer composites inserted with high volume fraction (up to 70 Vol%) of NiMnGa powders were fabricated and their damping behavior was investigated by dynamic mechanical analysis. It is found that the polymer matrix has little influence on the transformation temperatures of NiMnGa powders. A damping peak appears for NiMnGa/epoxy resin (EP) composites accompanying with the martensitic transformation or reverse martensitic transformation of NiMnGa powders during cooling or heating. The damping capacity for NiMnGa/EP composites increases linearly with the increase of volume fraction of NiMnGa powders and, decreases dramatically as the test frequency increases. The fracture strain of NiMnGa/EP composites decrease with the increase of NiMnGa powders.

  20. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  1. Magnetic excitations in CuMn spin-glass alloys

    International Nuclear Information System (INIS)

    Tsunoda, Y.; Kunitomi, N.; Cable, J.W.

    1985-01-01

    Recent neutron scattering measurements have helped to clarify two important features of CuMn spin glasses. Murani and co-workers have studied the dynamical behavior of spin-glass systems and have observed characteristic ferromagnetic spin correlations with a broad distribution of relaxation times and a dynamical freezing process. By means of the polarization analysis technique, Cable and co-workers have observed the coexistence of two types of magnetic short-range order (MSRO): one is a modulated-spin structure, and the other is a ferromagnetic cluster associated with the atomic short-range order (ASRO). These ordered regions produce diffraction maxima which are found at the (1 1/2 +/- delta 0) and the (1 1/2 0) reciprocal lattice points, respectively. Both of these observations seem to be essential for understanding the CuMn spin-glass system. However, the physical relationship of these properties is not yet understood. The authors have studied the inelastic scattering of neutrons around the magnetic diffuse peak positions of a Cu/sub 78.7/Mn/sub 21.3/ single crystal. The spin-glass freezing temperature of a CuMn alloy with this Mn concentration is estimated to be T/sub f/ approx. 90 K. Most of the data were taken by scanning along the [0 1 0] direction from the (1 0 0) to the (1 1 0) reciprocal lattice points

  2. Preparation-Properties Relation of Mn-Cu Hopcalite Catalyst

    OpenAIRE

    Ardita Mele; Ilo Mele; Altin Mele

    2012-01-01

    Problem statement: The Mn-Cu hopcalite catalyst was used for the conversion of CO to CO2 at low temperatures. It was the catalyst of choice in the gas masks for respiratory protection in mines, aircrafts, military, spatial laboratories. Approach: The efficiency of hopcalite catalyst depends on its surface parameters. Its surface characteristics can be influenced from the chosen way of the MnO2 and CuO precipitation and from the pressure of pelletizing. Results: The hopcalite samples has been ...

  3. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    International Nuclear Information System (INIS)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A; Molina-Valdovinos, S; Melendez-Lira, M; Lopez-Lopez, M

    2009-01-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm -1 and 291 cm -1 , respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm -1 and 250 cm -1 are evidenced. Additional new peaks located around 650 and 690 cm -1 are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm -1 and 695.2 cm -1 , in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn) m As n localized structures.

  4. Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges.

    Science.gov (United States)

    Cheng, Ji; Jiang, Shengxiang; Zhang, Yan; Yang, Zhijian; Wang, Cunda; Yu, Tongjun; Zhang, Guoyi

    2017-05-02

    The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs.

  5. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    Energy Technology Data Exchange (ETDEWEB)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

    2009-05-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

  6. Phase stability of CuAlMn shape memory alloys

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Novák, Václav

    2004-01-01

    Roč. 378, - (2004), s. 216-221 ISSN 0921-5093 Institutional research plan: CEZ:AV0Z1010914 Keywords : CuAlMn * shape memory alloys * martensitic transformation * - stress -strain tests * tension-compression cycling * history dependent phenomena Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.445, year: 2004

  7. Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

    OpenAIRE

    Qian, Suxin; Geng, Yunlong; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

    2016-01-01

    This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hystere...

  8. Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

    Science.gov (United States)

    Guzmán, G.; Escudero, R.; Silva, R.; Herrera, M.

    2018-04-01

    We present a study of the influence of gallium vacancy (VGa) point defects on the ferromagnetic properties of GaN:Mn and GaN:Mn,O micro- and nanostructures. Results demonstrate that the generation of these point defects enhances the ferromagnetic signal of GaN:Mn microstructures, while incorporation of oxygen as an impurity inhibits this property. XPS measurements revealed that Mn impurities in ferromagnetic GaN:Mn samples mainly exhibit a valence state of 2+. Cathodoluminescence (CL) spectra from Mn-doped GaN samples displayed emissions centered at about 1.97 eV, attributed to transitions between the 4T1-6A1 states of the Mn2+ d orbitals, and emissions centered at 2.45 and 2.9 eV, associated with the presence of VGa. CL measurements also revealed a blue shift of the GaN band-edge emission generated by the expansion of the wurtzite lattice due to Mn incorporation, which was confirmed by XRD measurements. These latter measurements also revealed an amorphization of GaN:Mn due to the incorporation of oxygen as impurities. The GaN:Mn samples were synthesized by thermal evaporation of GaN and MnCO3 powders onto Ni0.8Cr0.2/Si(100) in a horizontal furnace operated at low vacuum. The residual air inside the system was used as a source of oxygen during the synthesis of Mn and O co-doped GaN nanostructures. Mn and O impurities were incorporated into the nanostructures at different concentrations by varying the growth temperature. Energy Dispersive Spectroscopy, XRD, and XPS measurements confirmed that the obtained samples predominantly consisted of GaN.

  9. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Dorokhin, M. V., E-mail: dorokhin@nifti.unn.ru [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Pavlov, D. A.; Bobrov, A. I. [Lobachevsky State University, Physical Department (Russian Federation); Danilov, Yu. A.; Lesnikov, V. P.; Zvonkov, B. N.; Zdoroveyshchev, A. V. [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Kudrin, A. V. [Lobachevsky State University, Physical Department (Russian Federation); Demina, P. B. [Lobachevsky State University, Physical–Technical Research Institute (Russian Federation); Usov, Yu. V.; Nikolichev, D. E.; Kryukov, R. N.; Zubkov, S. Yu. [Lobachevsky State University, Physical Department (Russian Federation)

    2016-11-15

    The crystal structure, composition, and magnetic, and electric-transport properties of Mn{sub x}Ga{sub y} layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn{sub x}Ga{sub y}/GaAs diode structure, in particular, the height of the Schottky diode potential barrier.

  10. Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

    OpenAIRE

    Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

    2011-01-01

    We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

  11. Biological behaviour of some 67Ga and 64Cu chelates

    International Nuclear Information System (INIS)

    Leonovicova, T.; Angelis, B.; Cifka, J.; Cifkova, I.

    1984-01-01

    Chelates of 67 Ga and 64 Cu with iminodiacetic acid (IDA) and its two phenyl derivatives as well as with nitrilotriacetic acid (NTA) and benzylnitrilotriacetic acid (BNTA) were prepared. All the chelates were found to be negatively charged. A study of the biological distribution of these chelates in rats during time intervals of 3 to 180 min showed that the chelate of 67 Ga with IDA substituted at a phenyl by a hydrophobic substituent is excreted by the kidneys into the urine at a much higher rate than the IDA chelate of 67 Ga. The excretion of NTA and BNTA chelates of 67 Ga is the opposite. Blood clearance of 64 Cu chelates is more rapid than that of 67 Ga chelates. Chelates of 64 Cu accumulate in the liver and with the bile are slowly excreted into the intestines, urinary excretion is negligible. (author)

  12. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

    2007-04-23

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

  13. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    International Nuclear Information System (INIS)

    Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

    2007-01-01

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

  14. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  15. Diffusivities and atomic mobilities in Cu-rich fcc Al-Cu-Mn alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Ming; Du, Yong; Cui, Senlin; Xu, Honghui; Liu, Shuhong [Central South Univ., Changsha (China). State Key Laboratory of Powder Metallurgy; Zhang, Lijun [Bochum Univ. (DE). Interdisciplinary Centre for Advanced Materials Simulation (ICAMS)

    2012-07-15

    Via solid-solid diffusion couples, electron probe microanalysis and the Whittle and Green method, interdiffusivities in fcc Al-Cu-Mn alloys at 1 123 K were measured. The reliability of the obtained diffusivities is validated by comparing the computed diffusivities with literature data plus constraints among the diffusivities. Through assessments of experimentally determined diffusion coefficients by means of a diffusion-controlled transformations simulation package, the atomic mobilities of Al, Cu, and Mn in fcc Al-Cu-Mn alloys are obtained. Comprehensive comparisons between the model-predicted and the experimental data indicate that the presently obtained atomic mobilities can reproduce most of the diffusivities, concentration profiles, and diffusion paths reasonably. (orig.)

  16. Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

    OpenAIRE

    Yuan, Ye; Xu, Chi; Hübner, René; Jakiela, Rafal; Böttger, Roman; Helm, Manfred; Sawicki, Maciej; Dietl, Tomasz; Zhou, Shengqiang

    2017-01-01

    Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strengt...

  17. The Paramagnetism of Small Amounts of Mn Dissolved in Cu-Al and Cu-Ge Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Myers, H P; Westin, R

    1963-06-15

    Previous measurements of the valency of Mn in Cu-Zn alloys have been confirmed by measurements with the isoelectronic Cu-Al and Cu-Ge alloys as matrices for Mn. The valency, having the value i in pure copper, decreases slightly with increasing electron to atom ratio attaining the values 0. 9 and 0. 8 at the limiting composition in the Al and Ge alloys respectively. The apparent size of Mn in these alloys is discussed.

  18. The Paramagnetism of Small Amounts of Mn Dissolved in Cu-Al and Cu-Ge Alloys

    International Nuclear Information System (INIS)

    Myers, H.P.; Westin, R.

    1963-06-01

    Previous measurements of the valency of Mn in Cu-Zn alloys have been confirmed by measurements with the isoelectronic Cu-Al and Cu-Ge alloys as matrices for Mn. The valency, having the value i in pure copper, decreases slightly with increasing electron to atom ratio attaining the values 0. 9 and 0. 8 at the limiting composition in the Al and Ge alloys respectively. The apparent size of Mn in these alloys is discussed

  19. Strčess-induced martensitic transformation in Cu-Al-Zn-Mn polycrystal investigated by two in -situ neutron diffraction techniques

    Czech Academy of Sciences Publication Activity Database

    Šittner, Petr; Lukáš, Petr; Neov, Dimitar; Daymond, M. R.; Novák, Václav; Swallowe, G. M.

    2002-01-01

    Roč. 324, - (2002), s. 225-234 ISSN 0921-5093 R&D Projects: GA MŠk ME 186; GA ČR GV202/97/K038; GA AV ČR IAA1010909 Institutional research plan: CEZ:AV0Z1010914 Keywords : Stress-induced martensitic transformation * Cu-Al-Zn-Mn polycrystal * neutron diffraction technique Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.107, year: 2002

  20. Anisotropic magnetoresistance components in (Ga,Mn)As.

    Science.gov (United States)

    Rushforth, A W; Výborný, K; King, C S; Edmonds, K W; Campion, R P; Foxon, C T; Wunderlich, J; Irvine, A C; Vasek, P; Novák, V; Olejník, K; Sinova, Jairo; Jungwirth, T; Gallagher, B L

    2007-10-05

    We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

  1. Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

    Energy Technology Data Exchange (ETDEWEB)

    Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp [Center of Innovative Photovoltaic Systems (CIPS), Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Maekawa, Takuji [Research and Development Headquarters, ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan); Niki, Shigeru [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2015-05-21

    The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

  2. Secondary ordering in ternary alloy CuMnPt6

    International Nuclear Information System (INIS)

    Takahashi, Miwako; Das, Ananda Kumar; Nakamura, Reo; Ohshima, Ken-ichi; Iwasaki, Hiroshi; Shishido, Toetsu

    2006-01-01

    Using the pulsed-neutron diffraction technique, we performed in situ measurements of structural ordering in the ternary alloy CuMnPt 6 . The diffraction patterns at various temperatures give a direct observation of a double-step ordering: disorder to Cu 3 Au type order as an ordering within the fundamental face-centered cubic lattice to subdivide the lattice into two sublattices formed by face-centered sites (first sublattice) and corner sites (second sublattice) at 968degC; and Cu 3 Au type order to ABC 6 type order as an ordering within the second to subdivide the lattice further into two sublattices formed by alternating (111) planes at 746degC. The order parameters for the ABC 6 type structure experimentally estimated by the method of static concentration waves indicate that the primary ordering developed almost completely, but the secondary ordering remained incomplete. (author)

  3. Large energy absorption in Ni-Mn-Ga/polymer composites

    International Nuclear Information System (INIS)

    Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M.

    2005-01-01

    Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples

  4. Magnetic anisotropy of nonmodulated Ni-Mn-Ga martensite revisited

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Straka, L.; Novák, Václav; Fähler, S.

    2010-01-01

    Roč. 107, č. 9 (2010), 09A914/1-09A914/3 ISSN 0021-8979 Grant - others:AV ČR(CZ) M100100913 Institutional research plan: CEZ:AV0Z10100520 Keywords : magnetic anisotropy of non-modulated martensite * temperature dependence of anisotropy * Ni-Mn-Ga * adaptive martensite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.064, year: 2010 http://jap.aip.org/resource/1/japiau/v107/i9/p09A914_s1

  5. CuGaTe2-CuAlTe2 system

    International Nuclear Information System (INIS)

    Bodnar', I.V.

    2003-01-01

    The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

  6. Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

    Directory of Open Access Journals (Sweden)

    M. Ciorga

    2011-06-01

    Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

  7. Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga,In)As with in-plane anisotropy

    Science.gov (United States)

    Herrera Diez, L.; Rapp, C.; Schoch, W.; Limmer, W.; Gourdon, C.; Jeudy, V.; Honolka, J.; Kern, K.

    2012-04-01

    Appropriate adjustment of the tensile strain in (Ga, Mn)As/(Ga,In)As films allows for the coexistence of in-plane magnetic anisotropy, typical of compressively strained (Ga, Mn)As/GaAs films, and the so-called cross-hatch dislocation pattern seeded at the (Ga,In)As/GaAs interface. Kerr microscopy reveals a close correlation between the in-plane magnetic domain and dislocation patterns, absent in compressively strained materials. Moreover, the magnetic domain pattern presents a strong asymmetry in the size and number of domains for applied fields along the easy [11¯0] and hard [110] directions which is attributed to different domain wall nucleation/propagation energies. This strong influence of the dislocation lines in the domain wall propagation/nucleation provides a lithography-free route to the effective trapping of domain walls in magneto-transport devices based on (Ga, Mn)As with in-plane anisotropy.

  8. Mn3O4 precipitates in Ag and Cu studied with HRTEM : orientation relations and tetragonal twinning

    NARCIS (Netherlands)

    Kooi, B.J.; de Hosson, J.T.M.; Sarton, LAJ; Zeedijk, HB

    1997-01-01

    Internal oxidation of Ag-3at.%Mn resulted in Mn3O4 precipitates and of Cu-1at.%Mn gave rise to MnO and a minor amount of Mn3O4 precipitates. In Cu Mn3O4 transformed out of MnO, whereas in Ag Mn3O4 developed directly. Predominantly, precipitates with parallel topotaxy and an octahedron shape due to 8

  9. Temperature dependence of elastic properties in austenite and martensite of Ni-Mn-Ga epitaxial films

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Seiner, Hanuš; Stoklasová, Pavla; Sedlák, Petr; Sermeus, J.; Glorieux, C.; Backen, A.; Fähler, S.; Landa, Michal

    2018-01-01

    Roč. 145, Feb (2018), s. 298-305 ISSN 1359-6454 R&D Projects: GA ČR GA17-00062S Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic shape memory alloys * elastic properties * surface acoustic waves * Ni 2 MnGa * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Acoustics (UT-L) Impact factor: 5.301, year: 2016

  10. Properties of the CuGaSe2 and CuInSe2 (001) surface

    International Nuclear Information System (INIS)

    Deniozou, T.

    2005-01-01

    The main task of this work was to investigate the (001) CuGaSe 2 and CuInSe 2 surface in dependence of preparation and stoichiometry. The knowledge of the atomic structure as well as other surface properties is important in respect to optimization of novel thin film solar cells. For the characterization of the layers mainly Auger electron Spectroscopy, low-energy electron diffraction and photoelectron spectroscopy were implemented. The development of an appropriate procedure with Ar + sputtering and annealing combined with decapping enabled the preparation of clean and well-ordered surfaces. Different surface structures were observed in dependence of the layer preparation and composition. A (4 x 1) reconstruction was observed for the first time on CuGaSe 2 layers grown with a moderate Cu-excess after preparation by sputtering and annealing. Similarly a (4 x 2) reconstruction was detected on CuInSe2 surfaces of Cu-poor layers. A reconstruction could be also observed on Cu-poorer layers, however the facets/steps could not be completely removed. Cu-richer layers were facet-free, however the observed reconstruction was also weaker. Thus it was shown that in contrary to recent expectations, according to which only the (112) surface is stable, also the (001) can be stable under particular conditions. The appearance of facets or steps is correlated with the presence of CuIn 3 Se 5 or CuGa 3 Se 5 phases. This information is furthermore important for the understanding of grain boundaries in polycrystalline CuGaSe 2 and CuInSe 2 . Binding energy shifts were observed for the first time on all Se3d, In4d, Ga3d, Cu3d core levels of the reconstructed surfaces. By comparison with results from the literature from the similar ZnSe (100) surface a modell for the (4 x 2) reconstruction was proposed. The surface components in the Se3d, In4d and Cu3d emission were attributed to Se dimers or In and Cu adatoms respectively. The x 1 periodicity of the (4 x 1) reconstruction of CuGaSe 2 is

  11. Electronic Topological Transitions in CuNiMnAl and CuNiMnSn under pressure from first principles study

    Science.gov (United States)

    Rambabu, P.; Kanchana, V.

    2018-06-01

    A detailed study on quaternary ordered full Heusler alloys CuNiMnAl and CuNiMnSn at ambient and under different compressions is presented using first principles electronic structure calculations. Both the compounds are found to possess ferromagnetic nature at ambient with magnetic moment of Mn being 3.14 μB and 3.35 μB respectively in CuNiMnAl and CuNiMnSn. The total magnetic moment for both the compounds is found to decrease under compression. Fermi surface (FS) topology change is observed in both compounds under pressure at V/V0 = 0.90, further leading to Electronic Topological Transitions (ETTs) and is evidenced by the anomalies visualized in density of states and elastic constants under compression.

  12. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

    International Nuclear Information System (INIS)

    Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, M.; Mikulics, M.; Sofer, Z.

    2015-01-01

    We present a novel route for the synthesis of manganese doped GaN nanoparticles. Nanoparticles in the form of hexagonal discs were synthesized by rapid thermal treatment of manganese doped ammonium hexafluorogallate in ammonium atmosphere. The morphology of GaN:Mn nanoparticles was investigated using scanning electron microscopy. A concentration over 0.7 wt.% of Mn was observed by X-ray fluorescence and electron microprobe. Structural and electronic properties were investigated using X-ray diffraction, Raman spectroscopy and micro-photoluminescence with excitation wavelength of 325 nm and 532 nm. The magnetic properties between 4.5 K and 300 K were investigated by a superconducting quantum interference device (SQUID) magnetometer. GaN:Mn nanoparticles show a purely paramagnetic behavior which can be interpreted in terms of Mn 2+ ions exhibiting an antiferromagnetic interaction. - Highlights: • A new method for the synthesis of Mn doped GaN nanoparticles. • GaN:Mn nanoparticles form hexagonal discs. • None ferromagnetic ordering observed in GaN:Mn nanoparticles. • The concentration of Mn in GaN:Mn nanoparticles reach up to 0.8 wt.%

  13. Magnetic properties of doped Mn-Ga alloys made by mechanical milling and heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Daniel R. [Department of Material Science and Engineering, Florida State University, Tallahassee, FL 32304 (United States); National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Han, Ke; Niu, Rongmei [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Siegrist, Theo; Besara, Tiglet [Department of Material Science and Engineering, Florida State University, Tallahassee, FL 32304 (United States); Department of Chemical Engineering, Florida Agricultural and Mechanical University-Florida State University, Tallahassee, FL 32304 (United States)

    2016-05-15

    Mn-Ga alloys have shown hard magnetic properties, even though these alloys contain no rare-earth metals. However, much work is needed before rare-earth magnets can be replaced. We have examined the magnetic properties of bulk alloys made with partial replacement of both the Mn and Ga elements in the Mn{sub 0.8}Ga{sub 0.2} system. Bulk samples of Mn-Ga-Bi, Mn-Ga-Al, Mn-Fe-Ga and Mn-(FeB)-Ga alloys were fabricated and studied using mechanically milling and heat treatments while altering the atomic percentage of the third element between 2.5 and 20 at%. The ternary alloy exhibits all hard magnetic properties at room temperature with large coercivity. Annealed Mn-Ga-X bulk composites exhibit high coercivities up to 16.6 kOe and remanence up to 9.8 emu/g, that is increased by 115% over the binary system.

  14. Magnetic properties of doped Mn-Ga alloys made by mechanical milling and heat treatment

    Directory of Open Access Journals (Sweden)

    Daniel R. Brown

    2016-05-01

    Full Text Available Mn-Ga alloys have shown hard magnetic properties, even though these alloys contain no rare-earth metals. However, much work is needed before rare-earth magnets can be replaced. We have examined the magnetic properties of bulk alloys made with partial replacement of both the Mn and Ga elements in the Mn0.8Ga0.2 system. Bulk samples of Mn-Ga-Bi, Mn-Ga-Al, Mn-Fe-Ga and Mn-(FeB-Ga alloys were fabricated and studied using mechanically milling and heat treatments while altering the atomic percentage of the third element between 2.5 and 20 at%. The ternary alloy exhibits all hard magnetic properties at room temperature with large coercivity. Annealed Mn-Ga-X bulk composites exhibit high coercivities up to 16.6 kOe and remanence up to 9.8 emu/g, that is increased by 115% over the binary system.

  15. Interfacial, electrical, and spin-injection properties of epitaxial Co2MnGa grown on GaAs(100)

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Hickey, M. C.; Holmes, S. N.

    2009-01-01

    The interfacial, electrical, and magnetic properties of the Heusler alloy Co2MnGa grown epitaxially on GaAs(100) are presented with an emphasis on the use of this metal-semiconductor combination for a device that operates on the principles of spin-injection between the two materials. Through...... was monitored in situ by reflection high energy electron diffraction and the bulk composition was measured ex situ with inductively coupled plasma optical emission spectroscopy. The Co2MnGa L21 cubic structure is strained below a thickness of 20 nm on GaAs(100) but relaxed in films thicker than 20 nm...

  16. Magnetic properties of MnAs nanoclusters embedded in a GaAs semiconductor matrix

    International Nuclear Information System (INIS)

    Hai, Pham Nam; Takahashi, Keisuke; Yokoyama, Masafumi; Ohya, Shinobu; Tanaka, Masaaki

    2007-01-01

    We have clarified fundamental magnetic properties of MnAs nanoclusters (10 nm in diameter) embedded in a thin GaAs matrix (referred to as GaAs:MnAs) through tunneling magnetoresistance (TMR) characteristics of magnetic tunnel junctions (MTJs) consisting of a GaAs:MnAs thin film and a MnAs metal thin film as ferromagnetic electrodes. Although MnAs nanoclusters have coercive forces as small as 150 Oe at 7 K, they show unusually high blocking temperature, which is as large as 300 K. The remanent magnetization of the MnAs nanocluster system linearly decreases with increasing temperature. Those magnetic behaviors cannot be explained by the non-interacting particle model, revealing the important existence of dipolar interactions in MnAs nanocluster system

  17. Magnetic domains in Ni-Mn-Ga martensitic thin films

    International Nuclear Information System (INIS)

    Chernenko, V A; Anton, R Lopez; Kohl, M; Ohtsuka, M; Orue, I; Barandiaran, J M

    2005-01-01

    A series of martensitic Ni 52 Mn 24 Ga 24 thin films deposited on alumina ceramic substrates has been prepared by using RF(radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0m. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as δ∝√d in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples

  18. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    International Nuclear Information System (INIS)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-01-01

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

  19. Voltammetric and X-ray diffraction analysis of the early stages of the thermal crystallization of mixed Cu,Mn oxides

    Czech Academy of Sciences Publication Activity Database

    Grygar, Tomáš; Rojka, T.; Bezdička, Petr; Večerníková, Eva; Kovanda, F.

    2004-01-01

    Roč. 8, č. 4 (2004), s. 252-259 ISSN 1432-8488 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : amorphous phases * Cu,Mn oxides * hydrotalcite Subject RIV: CA - Inorganic Chemistry Impact factor: 0.984, year: 2004

  20. Thermal behaviour of Cu-Mg-Mn and Ni-Mg-Mn layered double hydroxides and characterization of formed oxides

    Czech Academy of Sciences Publication Activity Database

    Kovanda, F.; Grygar, Tomáš; Dorničák, V.; Rojka, T.; Bezdička, Petr; Jirátová, Květa

    2005-01-01

    Roč. 28, 1-4 (2005), s. 121-136 ISSN 0169-1317 Institutional research plan: CEZ:AV0Z40320502 Keywords : Cu-Mg-Mn basic carbonates * Ni-Mg-Mn hydrotalcite Subject RIV: CA - Inorganic Chemistry Impact factor: 1.324, year: 2005

  1. Magnetocaloric behavior of Mn rich Ni46Cu2Mn43In11 alloy

    Science.gov (United States)

    Ray, Mayukh K.; Obaidat, I. M.; Banerjee, Sangam

    2018-02-01

    In this work, we studied the magnetic entropy change (ΔSM) across the martensite transformation (MT) in Mn-rich Ni46Cu2Mn43ln11 alloy. This compound undergoes a MT and a magnetic phase transition around the temperatures (TM=) 272 K and (TCA=) 325 K, respectively. A large field induced shift (=0.28 K/kOe) of the MT temperatures is observed. An application of magnetic field (H =) of 50 kOe causes a large ΔSM of 20 J/kg-K and -4.4 J/kg-K around TM and TCA, respectively. We also found that the change in magnetic field induced isothermal ΔSM(H)T is mainly depends on the induced austenite phase fraction by the applied magnetic field at that temperature. Possible reasons for the observed behaviours are comprehensively discussed.

  2. What is the Valence of Mn in Ga(1-x)Mn(x)N?

    Science.gov (United States)

    Nelson, Ryky; Berlijn, Tom; Moreno, Juana; Jarrell, Mark; Ku, Wei

    2015-11-06

    We investigate the current debate on the Mn valence in Ga(1-x)Mn(x)N, a diluted magnetic semiconductor (DMS) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn valence to be close to 2+ (d(5)), but in a mixed spin configuration with average magnetic moments of 4μ(B). By integrating out high-energy degrees of freedom differently, we further derive for the first time from first-principles two low-energy pictures that reflect the intrinsic dual nature of the doped holes in the DMS: (1) an effective d(4) picture ideal for local physics, and (2) an effective d(5) picture suitable for extended properties. In the latter, our results further reveal a few novel physical effects, and pave the way for future realistic studies of magnetism. Our study not only resolves one of the outstanding key controversies of the field, but also exemplifies the general need for multiple effective descriptions to account for the rich low-energy physics in many-body systems in general.

  3. Fourier transform imaging of impurities in the unit cells of crystals: Mn in GaAs

    Science.gov (United States)

    Lee, T.-L.; Bihler, C.; Schoch, W.; Limmer, W.; Daeubler, J.; Thieß, S.; Brandt, M. S.; Zegenhagen, J.

    2010-06-01

    The lattice sites of Mn in ferromagnetic (Ga,Mn)As thin films were imaged using the x-ray standing wave technique. The model-free images, obtained straightforwardly by Fourier inversion, disclose immediately that the Mn mostly substitutes the Ga with a small fraction residing on minority sites. The images further reveal variations in the Mn concentrations of the different sites upon post-growth treatments. Subsequent model refinement based on the directly reconstructed images resolves with high precision the complete Mn site distributions. It is found that post-growth annealing increases the fraction of substitutional Mn at the expense of interstitial Mn whereas hydrogenation has little influence on the Mn site distribution. Our study offers an element-specific high-resolution imaging approach for accurately determining the detailed site distributions of dilute concentrations of atoms in crystals.

  4. Free standing CuO-MnO2 nanocomposite for room temperature ammonia sensing

    Science.gov (United States)

    Bhuvaneshwari, S.; Papachan, Seethal; Gopalakrishnan, N.

    2017-05-01

    CuO nanostructures and CuO-MnO2 nanocomposite were successfully synthesized using hydrothermal method without any aid of growth controlling agents. The synthesized CuO nanostructures have monoclinic structure. The XRD pattern of CuO-MnO2 observed with mixed phases of monoclinic CuO and birnessite-type MnO2 which confirms the formation of nanocomposite. SEM images revealed the turmeric-like morphology for CuO and intercalated sheets with flowers on the surface for CuO-MnO2. The length and breadth of turmeric-like structure is about 642.2 nm and 141.8 nm, respectively. The band gap of 1.72 eV for CuO nanostructure and 1.9 eV for CuO-MnO2 nanocomposite were observed from the absorption spectra. The free standing devices of CuO-MnO2 showed nearly a 3 fold increase sensing response to ammonia at room temperature when compared to the constituent CuO. The composite sensor showed response time of 120 s and recovered within 600 s. This enhanced response can be asserted to the peculiar morphology of the composite that provides more adsorption site for gas diffusion to take place.

  5. Detection of stacking faults breaking the [110]/[110] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

    International Nuclear Information System (INIS)

    Kopecky, M.; Kub, J.; Maca, F.; Masek, J.; Pacherova, O.; Rushforth, A. W.; Gallagher, B. L.; Campion, R. P.; Novak, V.; Jungwirth, T.

    2011-01-01

    We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (111) planes and absent in the (111) and (111) planes. They occupy 10 -2 %-10 -1 % of the ferromagnetic epilayer volume while no stacking faults are detected in the controlled, undoped GaAs epilayer. Full-potential density functional calculations provide additional evidence that the formation of the stacking faults is promoted by Mn attracted to these structural defects. The enhanced Mn density along the common [110] direction of the stacking fault planes produces a symmetry-breaking mechanism of a strength and sense that can account for the uniaxial [110]/[110] magnetocrystalline anisotropy of these ferromagnetic semiconductors.

  6. Deposition of Mn-Cu-Ni-enriched sediments during glacial period in the Central Indian Basin

    Digital Repository Service at National Institute of Oceanography (India)

    Borole, D.V.

    Two siliceous sediment cores collected from the Central Indian Basin have been analysed for organic carbon, biogenic silica, Al, Mn, Ni and Cu content. The concentrations of Mn, Cu and Ni showed one order of magnitude variation (an enrichment by a...

  7. Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Q.; MacDonald, A. H.

    2003-01-01

    Roč. 83, č. 2 (2003), s. 320-322 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * dc transport properties * (Ga, Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.049, year: 2003

  8. Branched needle microstructure in Ni-Mn-Ga 10M martensite: EBSD study

    Czech Academy of Sciences Publication Activity Database

    Chulist, R.; Straka, Ladislav; Sozinov, A.; Tokarski, T.; Skrotzki, W.

    2017-01-01

    Roč. 128, Apr (2017), s. 113-119 ISSN 1359-6454 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : EBSD * NiMnGa * seudoelasticity * twinning Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 5.301, year: 2016

  9. Effects of hydrogen on Mn-doped GaN: A first principles calculation

    International Nuclear Information System (INIS)

    Wu, M.S.; Xu, B.; Liu, G.; Lei, X.L.; Ouyang, C.Y.

    2013-01-01

    First-principles calculations based on spin density functional theory are performed to study the effects of H on the structural, electronic and magnetic properties of the Mn-doped GaN dilute magnetic semiconductors. Our results show that the interstitial H atom prefers to bond with N atom rather than Mn atom, which means that H favors to form the N–H complex rather than Mn–H complex in the Mn-doped GaN. After introducing one H atom in the system, the total magnetic moment of the Mn-doped GaN increases by 25%, from 4.0μ B to 5.0μ B . The physics mechanism of the increase of magnetic moment after hydrogenation in Mn-doped GaN is discussed

  10. Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

    Science.gov (United States)

    Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

    2018-05-01

    Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

  11. Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements

    Directory of Open Access Journals (Sweden)

    Jae-Hyun Lee

    2016-12-01

    Full Text Available We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial Al0.75Ga0.25As layer, free-standing metallic GaMnAs (with ~6% Mn microsheets (with TC ~85 K with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer. From finite element analysis, symmetrically placed and serpentine-shaped electrical leads induce minimal thermal stress at low temperatures. From magnetotransport measurements, changes in magnetic anisotropy are readily observed.

  12. Effect of Ce addition on microstructure of Al20Cu2Mn3 twin phase in an Al–Cu–Mn casting alloy

    International Nuclear Information System (INIS)

    Chen Zhongwei; Chen Pei; Li Shishun

    2012-01-01

    Highlights: ► Rare earth element Ce can retard the formation of the Al 20 Cu 2 Mn 3 twin phase in an Al–Cu–Mn casting alloy. ► Patterns of the particles of the Al 20 Cu 2 Mn 3 phase in Al–Cu–Mn free Ce alloy are more diverse. ► The symmetry of neighboring components of twins is characterized by glide reflection and reflection. ► The twins of Al 20 Cu 2 Mn 3 phase can enhance the mechanical properties of the Al–Cu–Mn casting alloys. - Abstract: Effects of Ce addition on microstructure of Al 20 Cu 2 Mn 3 twin phase and mechanical properties of an Al–Cu–Mn casting alloy were investigated by transmission electron microscopy, selected area electron diffraction, high resolution transmission electron microscopy and tensile test. The results show that rare earth element Ce can retard the formation of the Al 20 Cu 2 Mn 3 phase in the Al–Cu–Mn alloy. Compared with the Ce containing alloy, patterns of particles of the Al 20 Cu 2 Mn 3 phase in the Al–Cu–Mn free Ce alloy are more diverse. The symmetry of neighboring components of twins is characterized by glide reflection and reflection. In addition, twins of the Al 20 Cu 2 Mn 3 phase can enhance the mechanical properties of the Al–Cu–Mn alloy.

  13. Tuning the bimetallic amide-imide precursor system to make paramagnetic GaMnN nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Drygas, Mariusz [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Janik, Jerzy F., E-mail: janikj@agh.edu.pl [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Musial, Michal [AGH University of Science and Technology, Faculty of Energy and Fuels, Al. Mickiewicza 30, 30-059 Krakow (Poland); Gosk, Jacek [Warsaw University of Technology, Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland); Twardowski, Andrzej, E-mail: andrzej.twardowski@fuw.edu.pl [University of Warsaw, Faculty of Physics, Pasteura 5, 02-093 Warszawa (Poland)

    2016-09-01

    A bimetallic molecular system made of gallium (III) tris(dimethyl)amide Ga(NMe{sub 2}){sub 3} and manganese (II) bis(trimethylsilyl)amide Mn[N(SiMe{sub 3}){sub 2}]{sub 2} (Me = CH{sub 3}, fixed initial Mn-content 10 at.%) was subjected to ammonolysis in refluxing/liquid ammonia. Upon isolation at room temperature, the amide-imide mixed metal precursor was pyrolyzed at elevated temperatures under an ammonia flow by two different routes. Route 1 consisted of a direct nitridation at high temperatures of 500, 700 or 900 °C. In route 2, a low temperature pyrolysis at 150 °C was applied prior to nitridation at the same final temperatures as in route 1. All nanopowders were characterized by XRD diffraction, FT-IR spectroscopy, and SEM/EDX microscopy and analysis. Thorough magnetization measurements in function of magnetic field and temperature were carried out with a SQUID magnetometer. In all samples, the paramagnetic phase of GaMnN was accompanied by an antiferromagnetic by-product linked to a Mn-containing species from decomposition and oxidation of Mn-precursor excess. The Mn-contents in the crystalline GaMnN, i.e., Mn-incorporated in GaN crystal lattice, were of the order of 2–3 at.% mostly independent on the nitridation route whereas the latter had a pronounced effect on amounts of the antiferromagnetic by-product. - Highlights: • New bimetallic precursor system for conversion to GaN/Mn nanopowders was designed. • Two conversion routes were applied with precursor nitridation at 500, 700 or 900 °C. • Prepared nanopowders were thoroughly characterized including magnetic measurements. • The major product was the gallium nitride Mn-doped phase GaMnN with 2–3 at.% of Mn.

  14. Thermodynamic stability of austenitic Ni-Mn-Cu cast iron

    Directory of Open Access Journals (Sweden)

    A. Janus

    2014-07-01

    Full Text Available The performed research was aimed at determining thermodynamic stability of structures of Ni-Mn-Cu cast iron castings. Examined were 35 alloys. The castings were tempered at 900 °C for 2 hours. Two cooling speeds were used: furnace-cooling and water-cooling. In the alloys with the nickel equivalent value less than 20,0 %, partial transition of austenite to martensite took place. The austenite decomposition ratio and the related growth of hardness was higher for smaller nickel equivalent value and was clearly larger in annealed castings than in hardened ones. Obtaining thermodynamically stable structure of castings requires larger than 20,0 % value of the nickel equivalent.

  15. Magneto transport- and anisotropy studies on (001)- and (311)A-(Ga,Mn)As; Magnetotransport- und Anisotropieuntersuchungen an (001)- und (311)A-(Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Doeppe, M.

    2007-10-19

    In recent years the in low temperatures ferromagnetic semiconductor (Ga,Mn)As has gotten more and more into the focus of scientific interests. In the present work especially the magnetic anisotropies are concentrated upon. The first trials of epitactical growth of thin (Ga,Mn)As layers were successful on (001) GaAs substrate (typical thickness 20. 200 nm). In 2003 the Giant Planar Hall effect (GPHE) was discovered by resistance measurements in Hall geometry (transverse resistance) with an applied in plane magnetic field. The spin orbit coupling is accountable for both GPHE and the long known anisotropic magneto resistance (AMR). The gradient of the Hall voltage is important for the description of the resetting of magnetization because the resistance depends on the angle between the magnetization and the current path. This work presents results of anisotropy study on samples with a structure size in micro- and nanometer dimensions. The only a few hundred nanometer wide (Ga,Mn)As stripes were made by means of electron beam lithography and show strong additional uniaxiale magnetic anisotropy. The aspect ratio of the structure also influenced the resetting of magnetization. With the aid of compounding individual (Ga,Mn)As stripes (in a so-called zigzag structure) the evidence of a positive domain wall resistance in this material system could be shown. The second part of this work presents studies of (Ga,Mn)As layers grown on (311)A GaAs substrate. Here the B-field dependent Hall resistance measurements showed anomalous magnetic anisotropy in variance to (001)-(Ga,Mn)As. The orientation of the magnetic easy axes of (311)A (Ga,Mn)As depends - in contrast to (001)-(Ga,Mn)As - on the thickness of the magnetic layer and is tilted outside the (311)A surface. By an in plane applied magnetic field the AHE was also observable by the resetting of magnetization based on a non evanescent z-component perpendicular to the surface of this. An exact determination of the switching

  16. Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

    Science.gov (United States)

    Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud-Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jianjun

    2018-02-01

    Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 1016 ions/cm2 and 5 × 1016 ions/cm2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS). The XPS peaks of Ga 3 d, Ga 2 p, N 1 s, Mn 2 p and C 1 s were recorded in addition to a full survey of the samples. The doublet peaks of Ga 2 p for pure GaN were observed blue-shifted when compared with elemental Ga, and appeared further shifted to higher energies for the implanted samples. These observations point to changes in the bonds and the chemical environment of the host as a result of ion implantation. The results revealed broadening of the N 1 s peak after implantation, which is interpreted in terms of the presence of N-Mn bonds in addition to N-Ga bonds. The XPS spectra of Mn 2 p recorded for ion-implanted samples indicated splitting of Mn 2 p 1/2 and Mn 2 p 3/2 peaks higher than that for metallic Mn, which helps rule out the possibility of clustering and points to substitutional doping of Mn. These observations provide a framework that sheds light on the local environment of the material for understanding the mechanism of magnetic exchange interactions in Mn:GaN based diluted magnetic semiconductors.

  17. Mechanical and shape memory properties of ferromagnetic Ni2MnGa sputter-deposited films

    Science.gov (United States)

    Ohtsuka, M.; Matsumoto, M.; Itagaki, K.

    2003-10-01

    The ternary intermetallic compound Ni2MnGa is an intelligent material, which has a shape memory effect and a ferromagnetic property. Use of shape memory alloy films for an actuator of micro machines is very attractive because of its large recovery force. The data of mechanical and shape memory properties of the films are required to use for the actuator. The purpose of this study is to investigate the effects of fabrication conditions and to clarify the relationships between these properties and fabrication conditions of the Ni{2}MnGa films. The Ni{2}MnGa films were deposited with a radio-frequency magnetron sputtering apparatus using a Ni{50}Mn{25}Ga{25} or Ni{52}Mn{24}Ga{24} target. After deposition, the films were annealed at 873sim 1173 K. The asdeposited films were crystalline and had columnar grains. After the heat treatment, the grains widened and the grain boundary became indistinct with increasing heat treatment temperature. MnO and Ni{3} (Mn, Ga) precipitations were observed in the heat-treated films. The mechanical properties of the films were measured by the nanoindentation method. Hardness and elastic modulus of as-deposited films were larger than those of arcmelted bulk alloys. The hardness of the films was affected by the composition, crystal structure, microstructure and precipitation, etc. The elastic modulus of the films was also changed with the heat treatment conditions. The heat-treated films showed a thermal two-way shape memory effect.

  18. Ferromagnetic transition temperature enhancement in (Ga, Mn)As semiconductors by carbon codoping

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Sinova, J.; MacDonald, A. H.

    2003-01-01

    Roč. 68, č. 16 (2003), s. 161202-1 - 161202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA AV ČR IAA1010214 Institutional research plan: CEZ:AV0Z1010914 Keywords : (Ga, Mn)(As, C) semiconductors * tight-binding coherent-potential approximation * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  19. Spatial structure of single and interacting Mn acceptors in GaAs

    Science.gov (United States)

    Koenraad, Paul

    2005-03-01

    Ferromagnetic semiconductors such as Ga1-xMnxAs are receiving a lot of attention at the moment because of their application in spintronic devices. However, despite intense study of deep acceptors in III-V semiconductors such as MnGa, little information has been obtained on their electronic properties at the atomic scale. Yet the spatial shape of the Mn acceptor state will influence the hole-mediated Mn-Mn coupling and thus all of the magnetic properties of ferromagnetic semiconductors such as Ga1-xMnxAs. This study presents an experimental and theoretical description of the spatial symmetry of the Mn acceptor wave-function in GaAs. We present measurements of the spatial mapping of the anisotropic wavefunction of a hole localized at a Mn acceptor. To achieve this, we have used the STM tip not only to image the Mn acceptor but also to manipulate its charge state A^0/A^- at room temperature. Within an envelope function effective mass model (EFM) the anisotropy in the acceptor wave-function can be traced to the influence of the cubic symmetry of the GaAs crystal which selects specific d-states that mix into the ground state due to the spin-orbit interaction in the valence band. Comparison with calculations based on a tight-binding model (TBM) for the Mn acceptor structure supports this conclusion. Using the same experimental and theoretical approach we furthermore explored the interaction between Mn acceptors directly by analyzing close Mn-Mn pairs, which were separated by less than 2 nm. We will discuss some implications of these results for Mn delta-doped layers grown on differently oriented growth surfaces.

  20. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    International Nuclear Information System (INIS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-01-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

  1. Growth of GaMnAs under near-stoichiometric conditions

    International Nuclear Information System (INIS)

    Avrutin, V.; Humienik, D.; Frank, S.; Koeder, A.; Schoch, W.; Limmer, W.; Sauer, R.; Waag, A.

    2005-01-01

    We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga 0.96 Mn 0.04 As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. A Curie temperature as high as 95 K was achieved for the Ga 0.96 Mn 0.04 As samples grown at 240 deg. C and a V/III ratio of about 1.5. The lattice parameter of Ga 0.96 Mn 0.04 As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of the V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed

  2. Ductile shape memory alloys of the Cu-Al-Mn system

    International Nuclear Information System (INIS)

    Kainuma, R.; Takahashi, S.; Ishida, K.

    1995-01-01

    Cu-Al-Mn shape memory alloys with enhanced ductility have been developed by decreasing the degree of order in the β parent phase. Cu-Al-Mn alloys with Al contents lower than 18% exhibit good ductility with elongations of about 15% and excellent cold-workability arising from a lower degree of order in the Heusler (L21) β 1 parent phase, without any loss in their shape memory behavior. In this paper the mechanical and shape memory characteristics, such as the cold-workability, the Ms temperatures, the shape memory effect and the pseudo-elasticity of such ductile Cu-Al-Mn alloys are presented. (orig.)

  3. Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kasama, T., E-mail: tk@cen.dtu.dk; Yazdi, S. [Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Thuvander, M. [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Siusys, A. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa (Poland); Gontard, L. C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), C/Américo Vespucio 49, 41092 Seville (Spain); Kovács, A.; Duchamp, M.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich (Germany); Gustafsson, A. [Solid State Physics and the Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden); Sadowski, J. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa (Poland); MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden)

    2015-08-07

    Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 °C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography. Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga{sub 0.82}Mn{sub 0.18} nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 ± 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga{sub 0.82}Mn{sub 0.18} nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process.

  4. Commensurate and incommensurate '5M' modulated crystal structures in Ni-Mn-Ga martensitic phases

    International Nuclear Information System (INIS)

    Righi, L.; Albertini, F.; Pareti, L.; Paoluzi, A.; Calestani, G.

    2007-01-01

    It is well known that the composition of ferromagnetic shape memory Ni-Mn-Ga Heusler alloys determines both temperature of martensitic transformations and the structure type of the product phase. In the present work we focused our attention on the structural study of the so-called '5M' modulated structure. In particular, the structure of Ni 1.95 Mn 1.19 Ga 0.86 martensitic phase is analysed by powder X-ray diffraction (PXRD) and compared with that of the stoichiometric Ni 2 MnGa martensite. The study of the diffraction data reveals the occurrence of commensurate (C) structural modulation in Ni 1.95 Mn 1.19 Ga 0.86 ; this contrasts with Ni 2 MnGa, where an incommensurate (IC) structural modulation was evident. The two phases also differ in the symmetry of the fundamental martensitic lattice. In fact, the incommensurate modulation is related to an orthorhombic basic structure, while the commensurate variant presents a monoclinic symmetry. The commensurate modulated structure has been investigated by using the superspace approach already adopted to solve the structure of Ni 2 MnGa martensite. The structure has been determined by Rietveld refinement of PXRD data

  5. Optical Orientation of Mn2+ Ions in GaAs in Weak Longitudinal Magnetic Fields

    Science.gov (United States)

    Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

    2011-04-01

    We report on optical orientation of Mn2+ ions in bulk GaAs subject to weak longitudinal magnetic fields (B≤100mT). A manganese spin polarization of 25% is directly evaluated by using spin-flip Raman scattering. The dynamical Mn2+ polarization occurs due to the s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence reveals a nontrivial electron spin dynamics, where the oriented Mn2+ ions tend to stabilize the electron spins.

  6. Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

    Energy Technology Data Exchange (ETDEWEB)

    Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

    2008-07-01

    The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

  7. Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-02-28

    Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

  8. Isothermal section of the Er-Cu-Ga ternary system at 973 K

    Energy Technology Data Exchange (ETDEWEB)

    Belgacem, B. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Pasturel, M., E-mail: mathieu.pasturel@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Tougait, O. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Nouri, S. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Bekkachi, H. El; Peron, I. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Hassen, R. Ben [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Noeel, H. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France)

    2012-08-05

    Highlights: Black-Right-Pointing-Pointer The isothermal section at 973 K of the Er-Cu-Ga ternary phase diagram has been established for the first time. Black-Right-Pointing-Pointer Eight extensions of binary compounds in the ternary domain have been identified, as well as six ternary intermediate solid solutions characterized by an important Cu/Ga mutual substitution. Black-Right-Pointing-Pointer Magnetic properties of Er{sub 3}(Cu,Ga){sub 11} are reported for the first time and confirms the paramagnetic Curie-Weiss behavior of all the six intermediate intermetallics. - Abstract: Phase relations in the Er-Cu-Ga ternary system have been established at 973 K by means of powder X-ray diffraction complemented by energy dispersive spectroscopy coupled to scanning electron microscopy. The isothermal section of the phase diagram comprises eight extensions of binaries into the ternary system, ErCu{sub 1-x}Ga{sub x} (x {<=} 0.5), ErCu{sub 2-x}Ga{sub x} (x {<=} 1.1), ErCu{sub 5-x}Ga{sub x} (x {<=} 0.5), Er{sub 5}Cu{sub x}Ga{sub 3-x} (x {<=} 0.60), Er{sub 3}Cu{sub x}Ga{sub 2-x} (x {<=} 0.24), ErCu{sub x}Ga{sub 1-x} (x {<=} 0.10), ErCu{sub x}Ga{sub 2-x} (x {<=} 0.30) and ErCu{sub x}Ga{sub 3-x} (x {<=} 0.35), as well as six ternary intermediate phases, ErCu{sub x}Ga{sub 2-x} (0.4 {<=} x {<=} 0.7), Er{sub 14}Cu{sub 51-x}Ga{sub x} (5.5 {<=} x {<=} 11.0), ErCu{sub 5-x}Ga{sub x} (0.8 {<=} x {<=} 2.3), Er{sub 2}Cu{sub 17-x}Ga{sub x} (4.9 {<=} x {<=} 8.0), ErCu{sub 12-x}Ga{sub x} (5.7 {<=} x {<=} 6.7) and Er{sub 3}Cu{sub x}Ga{sub 11-x} (1.5 {<=} x {<=} 4.4), all deriving from binary structure-types.

  9. Synthesis and magnetic properties of hexagonal Y(Mn,Cu)O3 multiferroic materials

    International Nuclear Information System (INIS)

    Jeuvrey, L.; Peña, O.; Moure, A.; Moure, C.

    2012-01-01

    Single-phase hexagonal-type solid solutions based on the multiferroic YMnO 3 material were synthesized by a modified Pechini process. Copper doping at the B-site (YMn 1−x Cu x O 3 ; x 1+y MnO 3 ; y 3+ two-dimensional lattice. The magnetic transition at T N decreases from 70 K down to 49 K, when x(Cu) goes from 0 to 15 at%. Weak ferromagnetic Mn 3+ –Mn 4+ interactions created by the substitution of Mn 3+ by Cu 2+ , are visible through the coercive field and spontaneous magnetization but do not modify the overall magnetic frustration. Presence of Mn 3+ –Mn 4+ pairs leads to an increase of the electrical conductivity due to thermally-activated small-polaron hopping mechanisms. Results show that local ferromagnetic interactions can coexist within the frustrated state in the hexagonal polar structure. - Highlights: ► Hexagonal-type solid solutions of Y(Mn,Cu)O 3 synthesized by Pechini process. ► Chemical substitution at B site inhibits geometrical magnetic frustration. ► Magnetic transition decreases with Cu-doping. ► Local ferromagnetic Mn–Mn interactions coexist with the frustrated state.

  10. Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

    DEFF Research Database (Denmark)

    Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

    2017-01-01

    In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

  11. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the linkage of magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials f...

  12. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the link between magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials...

  13. Quantitative trait loci controlling Cu, Ca, Zn, Mn and Fe content in ...

    Indian Academy of Sciences (India)

    of essential minerals (such as Fe, Zn etc), breeding mineral- efficient crops that produce .... and seven digenic interactions were identified for Cu, Ca,. Zn, Mn and Fe, .... Eva P. 1993 Cadmium, copper and lead in wild rice from central. Canada.

  14. Anisotropic magnetoresistance components in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Vašek, Petr; Novák, Vít; Olejník, Kamil; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2007-01-01

    Roč. 99, č. 14 (2007), 147207/1-147207/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠk LC510 Grant - others:UK(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  15. Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Makarovsky, O. N.; Khalid, M.N.; Yasin, S.; Edmonds, K. W.; Campion, R. P.; Wunderlich, J.; Jungwirth, Tomáš; Williams, D.A.; Gallagher, B. L.; Foxon, C. T.

    2008-01-01

    Roč. 10, č. 8 (2008), 085004/1-085004/9 ISSN 1367-2630 R&D Projects: GA ČR GEFON/06/E002; GA MŠk LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance , Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.440, year: 2008

  16. Domain walls in (Ga,Mn)As diluted magnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Sugawara, A.; Kasai, H.; Tonomura, A.; Brown, P.D.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Zemen, Jan; Jungwirth, Tomáš

    2008-01-01

    Roč. 100, č. 4 (2008), 047202/1-047202/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute ferromagnetic semiconductor * Néel domain walls * electron holography * Landau-Lifshitz-Gilbert simulation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  17. Synthesis and magnetic properties of hexagonal Y(Mn,Cu)O{sub 3} multiferroic materials

    Energy Technology Data Exchange (ETDEWEB)

    Jeuvrey, L., E-mail: laurent.jeuvrey@univ-rennes1.fr [Sciences Chimiques de Rennes, UMR-CNRS 6226, Universite de Rennes 1, 35042 Rennes cedex (France); Pena, O. [Sciences Chimiques de Rennes, UMR-CNRS 6226, Universite de Rennes 1, 35042 Rennes cedex (France); Moure, A.; Moure, C. [Electroceramics Department, Instituto de Ceramica y Vidrio, CSIC, C/Kelsen 5, 28049, Madrid (Spain)

    2012-03-15

    Single-phase hexagonal-type solid solutions based on the multiferroic YMnO{sub 3} material were synthesized by a modified Pechini process. Copper doping at the B-site (YMn{sub 1-x}Cu{sub x}O{sub 3}; x<0.15) and self-doping at the A-site (Y{sub 1+y}MnO{sub 3}; y<0.10) successfully maintained the hexagonal structure. Self-doping was limited to y(Y)=2 at% and confirmed that excess yttrium avoids formation of ferromagnetic manganese oxide impurities but creates vacancies at the Mn site. Chemical substitution at the B-site inhibits the geometrical frustration of the Mn{sup 3+} two-dimensional lattice. The magnetic transition at T{sub N} decreases from 70 K down to 49 K, when x(Cu) goes from 0 to 15 at%. Weak ferromagnetic Mn{sup 3+}-Mn{sup 4+} interactions created by the substitution of Mn{sup 3+} by Cu{sup 2+}, are visible through the coercive field and spontaneous magnetization but do not modify the overall magnetic frustration. Presence of Mn{sup 3+}-Mn{sup 4+} pairs leads to an increase of the electrical conductivity due to thermally-activated small-polaron hopping mechanisms. Results show that local ferromagnetic interactions can coexist within the frustrated state in the hexagonal polar structure. - Highlights: Black-Right-Pointing-Pointer Hexagonal-type solid solutions of Y(Mn,Cu)O{sub 3} synthesized by Pechini process. Black-Right-Pointing-Pointer Chemical substitution at B site inhibits geometrical magnetic frustration. Black-Right-Pointing-Pointer Magnetic transition decreases with Cu-doping. Black-Right-Pointing-Pointer Local ferromagnetic Mn-Mn interactions coexist with the frustrated state.

  18. Ferromagnetism and transport in Mn and Mg co-implanted GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Kulbachinskii, V A [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Gurin, P V [Moscow State University, Low Temperature Physics Department, 119992, GSP-2, Moscow (Russian Federation); Danilov, Yu A [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Malysheva, E I [Physico-Technical Research Institute, University of Nizhny Novgorod, 603950, Nizhny Novgorod (Russian Federation); Horikoshi, Y [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan); Onomitsu, K [School of science and engineering, Waseda university, 3-4-1, Okubo, Tokyo 169-8555 (Japan)

    2007-03-15

    We investigated the influence of Mn and Mg co-implantation accompanied by rapid thermal annealing on magnetic and galvanomagnetic properties of p-GaAs. We characterized the samples with SQUID magnetometry and magnetotransport measurements in the temperature interval 4.2 KGa{sub 1-x}Mn{sub x}As solid solution on galvanomagnetic properties of holes. Above this temperature, ferromagnetism survives due to the MnAs and Ga{sub 1-x}Mn{sub x} clusters. The magnetoresistance changes from colossal negative to enhanced positive with increasing temperature near T = 35 K.

  19. In situ TEM study of deformation twinning in Ni-Mn-Ga non-modulated martensite

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Ge, Y.; Heczko, Oleg; Hannula, S.-P.

    2013-01-01

    Roč. 61, č. 14 (2013), s. 5290-5299 ISSN 1359-6454 R&D Projects: GA ČR(CZ) GAP107/11/0391; GA MŠk(CZ) LM2011026; GA ČR GAP107/12/0800; GA AV ČR IAA100100920 Institutional support: RVO:68378271 Keywords : Ni-Mn-Ga * in situ TEM * magnetic shape memory * deformation twinning * twinning dislocation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.940, year: 2013

  20. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  1. Exchange and spin-orbit induced phenomena in diluted (Ga, Mn) As from first principles

    Czech Academy of Sciences Publication Activity Database

    Kudrnovský, Josef; Drchal, Václav; Turek, Ilja

    2016-01-01

    Roč. 94, č. 5 (2016), 1-8, č. článku 054428. ISSN 2469-9950 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68378271 ; RVO:68081723 Keywords : GaMnAs * Curie temperature * spin-stiffness * anisotropic magnetoresistance * anomalous Hall effect * Gilbert damping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  2. Experimental determination of the Curie temperature for Ga(Mn)As

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Výborný, Zdeněk; Jurka, Vlastimil; Smrčka, Ludvík

    2011-01-01

    Roč. 24, 1-2 (2011), s. 805-808 ISSN 1557-1939 R&D Projects: GA MŠk MEB020928; GA AV ČR KAN400100652 Institutional research plan: CEZ:AV0Z10100521 Keywords : Ga(Mn)As * Hall effect * magnetoresistance * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.650, year: 2011

  3. Dislocation structure evolution and characterization in the compression deformed Mn-Cu alloy

    International Nuclear Information System (INIS)

    Zhong, Y.; Yin, F.; Sakaguchi, T.; Nagai, K.; Yang, K.

    2007-01-01

    Dislocation densities and dislocation structure arrangements in cold compressed polycrystalline commercial M2052 (Mn-20Cu-5Ni-2Fe) high damping alloy with various strains were determined in scanning mode by X-ray peak profile analysis and electron backscatter diffraction (EBSD). The results indicate that the Mn-Cu-Ni-Fe alloy has an evolution behavior quite similar to the dislocation structure in copper. The dislocation arrangement parameter shows a local minimum in the transition range between stages III and IV that can be related to the transformation of the dislocation arrangement in the cell walls from a polarized dipole wall (PDW) into a polarized tile wall (PTW) structure. This evolution is further confirmed by the results of local misorientation determined by EBSD. In addition, during deformation, the multiplication of dislocation densities in the MnCu alloy is significantly slower than that in copper, and the transition of the dislocation structure is strongly retarded in the MnCu alloy compared with copper. These results can be explained by the mechanism of elastic anisotropy on the dislocation dynamics, as the elastic anisotropy in the MnCu alloy is larger than that in copper, which can strongly retard the multiplication of the dislocation population and the transformation of the dislocation structure. These results are important for research into the plastic working behavior of Mn-Cu-Ni-Fe high damping alloy

  4. Interlayer exchange coupling in (Ga,Mn)As based multilayers

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Jungwirth, Tomáš; Gallagher, B. L.

    2006-01-01

    Roč. 3, č. 12 (2006), s. 4070-4073 ISSN 1610-1634 R&D Projects: GA ČR GA202/05/0575; GA AV ČR(CZ) IAA100100530; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * standing-wave fluorescence * x-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism

  5. Mn doped GaN thin films and nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

    2012-01-01

    Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  6. Spin disorder effect in anomalous Hall effect in MnGa

    Science.gov (United States)

    Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

    2017-12-01

    We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

  7. Magnetotransport in (Ga,Mn)As on the verge of the single domain model

    Energy Technology Data Exchange (ETDEWEB)

    Rapp, Christoph; Dreher, Lukas; Daeubler, Joachim; Donhauser, Daniela; Glunk, Michael; Schoch, Wladimir; Schwaiger, Stephan; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2009-07-01

    We investigate the limits of the single-domain model in (Ga,Mn)As by performing detailed angle- and field-dependent magnetotransport measurements in samples with differing magnetic anisotropies. For this purpose, a series of (Ga,Mn)As layers with Mn concentrations of {proportional_to}5% was grown by low-temperature molecular-beam epitaxy on relaxed (In,Ga)As/GaAs templates with different In-concentrations, realizing different strain conditions from compressive to tensile. In past investigations we have elucidated the strain dependence of the magnetic anisotropy and of the anisotropic magnetoresistance employing a single-domain model. In order to analyze the break-down of the single-domain model, we now study in detail magnetization reversal processes by sweeping an external magnetic field along selected axes. The magnetic-field sweeps are compared with a series of angle-dependent magnetotransport measurements, carried out at weak external magnetic fields.

  8. Generalized stacking fault energies, cleavage energies, ionicity and brittleness of Cu(Al/Ga/In)Se2 and CuGa(S/Se/Te)2

    Science.gov (United States)

    Xue, H. T.; Tang, F. L.; Gruhn, T.; Lu, W. J.; Wan, F. C.; Rui, Z. Y.; Feng, Y. D.

    2014-04-01

    We calculate the generalized stacking fault (GSF) energies and cleavage energies γcl of the chalcopyrite compounds CuAlSe2, CuGaSe2, CuInSe2, CuGaS2 and CuGaTe2 using first principles. From the GSF energies, we obtain the unstable stacking fault energies γus and intrinsic stacking fault energies γisf. By analyzing γus and γisf, we find that the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) direction is the easiest slip direction for these five compounds. Also, for CuInSe2, it is most possible to undergo a dislocation-nucleation-induced plastic deformation along the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) slip direction. We show that the (1 1 2) plane is the preferable plane for fracture in the five compounds by comparing γcl of the (0 0 1) and (1 1 2) planes. It is also found that both γus and γcl decrease as the cationic or anionic radius increases in these chalcopyrites, i.e. along the sequences CuAlSe2 → CuGaSe2 → CuInSe2 and CuGaS2 → CuGaSe2 → CuGaTe2. Based on the values of the ratio γcl/γus, we discuss the brittle-ductile properties of these compounds. All of the compounds can be considered as brittle materials. In addition, a strong relationship between γcl/γus and the total proportion of ionic bonding in these compounds is found.

  9. Magnetotransport of CaCu3Mn4O12 complex perovskite derivatives

    International Nuclear Information System (INIS)

    Sanchez-Benitez, J.; Andres, A. de; Garcia-Hernandez, M.; Alonso, J.A.; Martinez-Lope, M.J.

    2006-01-01

    Neutron powder diffraction, magnetic and magnetotransport studies were carried out on new derivatives of the CaCu 3 Mn 4 O 12 (A'A 3 B 4 O 12 ) complex perovskite. The samples were prepared in polycrystalline form under moderate pressure conditions. Substitutions at A and A' sites of CaCu 3 Mn 4 O 12 , with only Mn 4+ and insulating behavior, imply electron doping that affects the magnetic and transport properties. X-ray Absorption Spectroscopy showed that Mn 3+ /Mn 4+ valence mixing occurs only at B site, progressively filling the e g band and providing the metallic character in these compounds, as we observe in most of these samples. A semiconducting behavior is observed in samples with 50% Mn 3+ at B site. This can be understood by the opening of a gap in the conduction band corresponding to the half filling of the e g states. This is the case of the tetravalent rare earth doped samples (Ce and Th at A' site) and of the appropriate A site doped Ca(CuMn 2 )Mn 4 O 12 sample. At the strongly distorted A positions, Mn 3+ , with localized e g electrons, act as magnetic impurities at very low temperatures (<40 K) giving rise to the observed upturn in the resistivity. The magnetic origin of this scattering is evidenced by its drastic reduction under a magnetic field

  10. Formation and structure of nanocrystalline Al-Mn-Ni-Cu alloys

    International Nuclear Information System (INIS)

    Latuch, J.; Krasnowski, M.; Ciesielska, B.

    2002-01-01

    This paper reports the results of the short investigation on the effect of Cu additions upon the nanocrystallization behaviour of an Al-Mn-Ni alloy. 2 at.% Cu added to the base alloy of Al 85 Mn 10 Ni 5 alloy by substitution for Mn(mischmetal). The control of cooling rate did not cause the formation of nanocrystals of fcc-Al phase. The nanocrystalline structure fcc-Al + amorphous phase in quarternary alloy was obtained by isothermal annealing and continuous heating method, but the last technique is more effective. The volume fraction, lattice parameter, and size of Al-phase were calculated. (author)

  11. Phenomenological approach to the spin glass state of (Cu-Mn, Ag-Mn, Au-Mn and Au-Fe) alloys at low temperatures

    International Nuclear Information System (INIS)

    Al-Jalali, Muhammad A.; Kayali, Fawaz A.

    2000-01-01

    Full text.The spin glass of: (Cu-Mn, Ag-Mn, Au-Mn, Au-Fe) alloys has been extensively studied. The availability of published and assured experimental data on the susceptibility x(T) of this alloys has enabled the design and application of phenomenological approach to the spin glass state of these interesting alloys. The use of and advanced (S.P.S.S) computer software has resulted revealing some important features of the spin glass in these alloys, the most important of which is that the spin glass state do not represent as phase change

  12. 27Al, 63Cu NMR spectroscopy and electrical transport in Heusler Cu-Mn-Al alloy powders

    Science.gov (United States)

    Nadutov, V. M.; Perekos, A. O.; Kokorin, V. V.; Trachevskii, V. V.; Konoplyuk, S. M.; Vashchuk, D. L.

    2018-02-01

    The ultrafine powder of the Heusler Cu-13,1Mn-12,6Al (wt.%) alloy produced by electrical spark dispersion (ESD) in ethanol and the pellets prepared by pressing of the powders and aged in various gas environment (air, Ar, vacuum) were studied by XRD, nuclear magnetic resonance, magnetic and electric transport methods. The constituent phases were identified as b.c.c. α-Cu-Mn-Al, f.c.c. γ-Cu-Mn-Al, Cu2MnAl, and oxides. The sizes of the coherently scattering domains (CSD) and the saturation magnetizations were in the range of 4-90 nm and 0-1.5 Am2/kg, respectively. 27Al and 63Cu NMR spectra of the powders and pellets have shown hyperfine structure caused by contributions from atomic nuclei of the constituent phases. The aging of pellets in different gas environments had effect on their phase composition but no effect on dispersion of the phases. In contrast to the as-cast alloy, electrical resistance of the pellets evidenced semiconducting behavior at elevated temperatures due to the presence of metal oxides formed on the surfaces of nanoparticles.

  13. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, H., E-mail: hassenriahi1987@gmail.com [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Thevenard, L. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Maaref, M.A. [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Gallas, B. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Lemaître, A. [Laboratoire de Photonique et de Nanostructures – CNRS, Route de Nozay, 91460 Marcoussis (France); Gourdon, C [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France)

    2015-12-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO{sub 2} buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO{sub 2} layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO{sub 2}/ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO{sub 2} on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO{sub 2} and ZnO on the ferromagnetic properties of GaMnAs.

  14. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    International Nuclear Information System (INIS)

    Riahi, H.; Thevenard, L.; Maaref, M.A.; Gallas, B.; Lemaître, A.; Gourdon, C

    2015-01-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO 2 /ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO 2 on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO 2 and ZnO on the ferromagnetic properties of GaMnAs

  15. Preparation and magnetic properties of multiferroic CuMnO2 nanoparticles.

    Science.gov (United States)

    Kurokawa, Akinobu; Yanoh, Tkuya; Yano, Shinya; Ichiyanagi, Yuko

    2014-03-01

    CuMnO2 nanoparticles with diameters of 64 nm were synthesized by a novel wet chemical method. An optimized two-step annealing method was developed through the analysis of thermogravimetric differential thermal analysis (TG-DTA) measurements in order to obtain single-phase CuMnO2. A sharp exothermic peak was observed in the DTA curve at approximately 500 K where structural changes of the copper oxides and manganese oxides in the precursor are expected to occur. It is believed that Cu+ ions were oxidized to Cu2+ ions and that Mn2+ ions were oxidized to Mn3+ ions in the Cu-Mn-O system. Deoxidization reactions were also found at approximately 1200 K. The optimized annealing temperature for the first step was determined to be 623 K in air. The optimized annealing temperature for the second step was 1173 K in an Ar atmosphere. Magnetization measurements suggested an antiferromagnetic spin ordering at approximately 50 K. It was expected that Mn3+ spin interactions induced magnetic phase transition affected by definite temperature.

  16. Synthetic, structural, spectroscopic and theoretical study of a Mn(III)-Cu(II) dimer containing a Jahn-Teller compressed Mn ion

    DEFF Research Database (Denmark)

    Berg, Nelly; Hooper, Thomas N.; Liu, Junjie

    2013-01-01

    The heterobimetallic complex [Cu(II)Mn(III)(L)(2)(py)(4)](ClO(4))·EtOH (1) built using the pro-ligand 2,2'-biphenol (LH(2)), contains a rare example of a Jahn-Teller compressed Mn(III) centre. Dc magnetic susceptibility measurements on 1 reveal a strong antiferromagnetic exchange between the Cu...

  17. XANES Studies of Mn K and L3,2 Edges in the (Ga,Mn)As Layers Modified by High Temperature Annealing

    International Nuclear Information System (INIS)

    Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Jakiela, R.; Demchenko, I.N.; Sadowski, J.; Holub-Krappe, E.; Persson, A.; Arvanitis, D.

    2008-01-01

    Ga 1-x Mn x As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Ga 1-x Mn x As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not ob- serve changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms. (authors)

  18. PECULIAR OPTICAL PROPERTIES OF Co2MnGa ALLOYS

    Directory of Open Access Journals (Sweden)

    Joo Yull Rhee

    2017-11-01

    potential during the self-consistent calculation significantly modifies the minorityspin Co and Mn 3d bands, resulting in a contraction of the energy gaps between states which are strongly involved in interband absorption peaks.

  19. TMR- and TAMR-effects of (Ga,Mn)As and GaAs tunnel junctions; TMR- und TAMR-Effekt an (Ga,Mn)As und GaAs Tunnelstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Brinkmeier, Eva

    2009-07-30

    This thesis is concerned with the experimental investigation of the tunnel magnetoresistance (TMR) and tunnel anistropic magnetoresistance (TAMR) in GaAs and (Ga,Mn)As tunnel junction. A special emphasis was put on the study of the newly discovered TAMR effect, which consists in the variation of the TMR with the magnetization's angle. The tunnel junctions were fabricated by means of optical lithography and wet chemical etching. The dependence of the TAMR effect on the layer system, the barrier thickness, the bias voltage, the temperature and the applied magnetic field magnitude was subsequently examined. The conducted measurements on (Ga,Mn)As junctions showed a TMR effect as well as various anisotropic effects which are in good agreement with the experimental reports published so far. The observed dependences of the TAMR effect on the aforementioned parameters were discussed within the framework of two distinct preexisting theoretical models and the experimental data could be explained by the superimposition of two effects stemming in one case from the spin orbit coupling in the (Ga,Mn)As layer and in the other from the concurrent action of the Rashba and Dresselhaus spin orbit interaction within the barrier. (orig.)

  20. L-J phase in a Cu2.2Mn0.8Al alloy

    Science.gov (United States)

    Jeng, S. C.; Liu, T. F.

    1995-06-01

    A new type of precipitate (designated L-J phase) with two variants was observed within the (DO3 + L21) matrix in a Cu2.2Mn0.8Al alloy. Transmission electron microscopy examinations indicated that the L-J phase has an orthorhombic structure with lattice parameters a = 0.413 nm, b = 0.254 nm and c = 0.728 nm. The orientation relationship between the L-J phase and the matrix is (100)L-J//(011) m , (010)L-J//(111) m and (001)L-J//(211) m . The rotation axis and rotation angle between two variants of the L-J phase are [021] and 90 deg. The L-J phase has never been observed in various Cu-Al, Cu-Mn, and Cu-Al-Mn alloy systems before.

  1. Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

    International Nuclear Information System (INIS)

    Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.

    2006-01-01

    Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide

  2. Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Liu, X.; Sasaki, Y.; Furdyna, J. K.; Atkinson, W. A.; MacDonald, A. H.

    2004-01-01

    Roč. 69, č. 8 (2004), 085209/1-085209/6 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetization relaxation * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.075, year: 2004

  3. Mn doping of GaN layers grown by MOVPE

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Šofer, Z.; Sedmidubský, D.; Jankovský, O.; Hejtmánek, Jiří; Maryško, Miroslav; Václavů, M.; Mikulics, M.

    2012-01-01

    Roč. 56, č. 2 (2012), s. 122-126 ISSN 0862-5468 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521 Keywords : metalorganic vapor phase epitaxy * nitrides * magnetic materials * semiconducting III-V materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.418, year: 2012

  4. Experimental study of the anisotropic magneto-Seebeck effect in (Ga,Mn)As thin films

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias; Krupp, Alexander T.; Brenninger, Thomas; Venkateshvaran, Deepak; Opel, Matthias; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm, Ulm (Germany)

    2011-07-01

    In analogy to anisotropic magnetoresistance (AMR), the thermopower of ferromagnetic materials also characteristically depends on the orientation of the magnetization vector. This anisotropic magneto-thermopower - or anisotropic magneto-Seebeck effect (AMS) - has only scarcely been studied to date. Taking the ferromagnetic semiconductor (Ga,Mn)As with its large magneto-resistive effects as a prototype example, we have measured the evolution of both the AMR and the AMS effects at liquid He temperatures as a function of the orientation of a magnetic field applied in the (Ga,Mn)As film plane, for different, fixed magnetic field magnitudes. Our data show that the AMS effect can be adequately modeled only if the symmetry of the (Ga,Mn)As crystal is explicitly taken into account. We quantitatively compare our AMR and AMS measurements with corresponding model calculations, and address the validity of the Mott relations linking the magneto-resistance and the magneto-Seebeck coefficients.

  5. Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

    Science.gov (United States)

    Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

    2018-05-01

    D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

  6. Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

    International Nuclear Information System (INIS)

    Steichen, M.; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

    2011-01-01

    CuGaSe 2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa 2 alloying during the electrodeposition and CuGaSe 2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe 2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

  7. A new wire fabrication processing using high Ga content Cu-Ga compound in V3Ga compound superconducting wire

    International Nuclear Information System (INIS)

    Hishinuma, Yoshimitsu; Nishimura, Arata; Kikuchi, Akihiro; Iijima, Yasuo; Takeuchi, Takao

    2007-01-01

    A superconducting magnet system is also one of the important components in an advanced magnetic confinement fusion reactor. Then it is required to have a higher magnetic field property to confine and maintain steady-sate burning deuterium (D)-tritium (T) fusion plasma in the large interspace during the long term operation. Burning plasma is sure to generate 14 MeV fusion neutrons during deuterium-tritium reaction, and fusion neutrons will be streamed and penetrated to superconducting magnet through large ports with damping neutron energy. Therefore, it is necessary to consider carefully not only superconducting property but also neutron irradiation property in superconducting materials for use in a future fusion reactor, and a 'low activation and high field superconducting magnet' will be required to realize the fusion power plant beyond International Thermonuclear Experimental Reactor (ITER). V-based superconducting material has a much shorter decay time of induced radioactivity compared with the Nb-based materials. We thought that the V 3 Ga compound was one of the most promising materials for the 'low activation and higher field superconductors' for an advanced fusion reactor. However, the present critical current density (J c ) property of V 3 Ga compound wire is insufficient for apply to fusion magnet applications. We investigated a new route PIT process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V 3 Ga compound wire. (author)

  8. Time-dependent of characteristics of Cu/CuS/n-GaAs/In structure produced by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Sağlam, M.; Güzeldir, B., E-mail: msaglam@atauni.edu.tr

    2016-09-15

    Highlights: • The CuS thin film used at Cu/n-GaAs structure is grown by SILAR method. • There has been no report on ageing of characteristics of this junction in the literature. • The properties of Cu/CuS/n-GaAs/In structure are examined with different methods. • It has been shown that Cu/CuS/n-GaAs/In structure has a stable interface. - Abstract: The aim of this study is to explain effects of the ageing on the electrical properties of Cu/n-GaAs Shottky barrier diode with Copper Sulphide (CuS) interfacial layer. CuS thin films are deposited on n-type GaAs substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The structural and the morphological properties of the films have been carried out by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) techniques. The XRD analysis of as-grown films showed the single-phase covellite, with hexagonal crystal structure built around two preferred orientations corresponding to (102) and (108) atomic planes. The ageing effects on the electrical properties of Cu/CuS/n-GaAs/In structure have been investigated. The current–voltage (I–V) measurements at room temperature have been carried out to study the change in electrical characteristics of the devices as a function of ageing time. The main electrical parameters, such as ideality factor (n), barrier height (Φ{sub b}), series resistance (R{sub s}), leakage current (I{sub 0}), and interface states (N{sub ss}) for this structure have been calculated. The results show that the main electrical parameters of device remained virtually unchanged.

  9. Time-dependent of characteristics of Cu/CuS/n-GaAs/In structure produced by SILAR method

    International Nuclear Information System (INIS)

    Sağlam, M.; Güzeldir, B.

    2016-01-01

    Highlights: • The CuS thin film used at Cu/n-GaAs structure is grown by SILAR method. • There has been no report on ageing of characteristics of this junction in the literature. • The properties of Cu/CuS/n-GaAs/In structure are examined with different methods. • It has been shown that Cu/CuS/n-GaAs/In structure has a stable interface. - Abstract: The aim of this study is to explain effects of the ageing on the electrical properties of Cu/n-GaAs Shottky barrier diode with Copper Sulphide (CuS) interfacial layer. CuS thin films are deposited on n-type GaAs substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The structural and the morphological properties of the films have been carried out by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) techniques. The XRD analysis of as-grown films showed the single-phase covellite, with hexagonal crystal structure built around two preferred orientations corresponding to (102) and (108) atomic planes. The ageing effects on the electrical properties of Cu/CuS/n-GaAs/In structure have been investigated. The current–voltage (I–V) measurements at room temperature have been carried out to study the change in electrical characteristics of the devices as a function of ageing time. The main electrical parameters, such as ideality factor (n), barrier height (Φ_b), series resistance (R_s), leakage current (I_0), and interface states (N_s_s) for this structure have been calculated. The results show that the main electrical parameters of device remained virtually unchanged.

  10. L1{sub 0} stacked binaries as candidates for hard-magnets. FePt, MnAl and MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Yu-ichiro [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Applied Physics, The University of Tokyo (Japan); Madjarova, Galia [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physical Chemistry, Faculty of Chemistry and Pharmacy, Sofia University (Bulgaria); Flores-Livas, Jose A. [Department of Physics, Universitaet Basel (Switzerland); Dewhurst, J.K.; Gross, E.K.U. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Felser, C. [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Sharma, S. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physics, Indian Institute of Technology, Roorkee, Uttarkhand (India)

    2017-08-15

    We present a novel approach for designing new hard magnets by forming stacks of existing binary magnets to enhance the magneto crystalline anisotropy. This is followed by an attempt at reducing the amount of expensive metal in these stacks by replacing it with cheaper metal with similar ionic radius. This strategy is explored using examples of FePt, MnAl and MnGa. In this study a few promising materials are suggested as good candidates for hard magnets: stacked binary FePt{sub 2}MnGa{sub 2} in structure where each magnetic layer is separated by two non-magnetic layers, FePtMnGa and FePtMnAl in hexagonally distorted Heusler structures and FePt{sub 0.5}Ti{sub 0.5}MnAl. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

    CERN Document Server

    Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

    2012-01-01

    We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

  12. Preparation of catalysts based on Cu-Mn for combustion of n-hexane

    International Nuclear Information System (INIS)

    Picasso, Gino; Belleza, Freddy; Zavala, Cesar; Lopez, Alcides; Sun Kou, Rosario

    2014-01-01

    Catalysts based on Cu-Mn mixed oxides (with molar ratio Cu/Mn in the range of 0,33 to 3) have been prepared by sol-gel method of self-combustion for removal of n-hexane. Two combustion agents, citric acid and ethylenglycol, were applied to study their influence in the final catalyst. Additionally, simple oxides have been synthesized using the same procedure for comparison reasons. The catalysts were characterized by X-ray diffraction (XRD) and sorption of N_2 (BET method). All samples depicted surfaces, preferentially assigned to mesoporosity whose values ranged from 4 to 50 m"2/g. All XRD difractograms of mixed samples showed the presence of a good crystalinity indepently of composition, with the formation of spinel-hopcalite phase meanwhile Mn and Cu simple oxide showed peaks attributed to Mn_O_3, Mn_3O_4 and CuO, respectively. Curves of activity, measured as number of VOC molecules converted per hour and per gram of catalyst, considering the specific surface, showed that mixed oxides with more Mn content were the best, additionally, the sample prepared from citric acid was more active than the corresponding values to simple oxides, probably due to the better specific surface and the better spinel-hopcalite structure obtained. (author)

  13. Structural transformations in Mn2NiGa due to residual stress

    International Nuclear Information System (INIS)

    Singh, Sanjay; Maniraj, M.; D'Souza, S. W.; Barman, S. R.; Ranjan, R.

    2010-01-01

    Powder x-ray diffraction study of Mn 2 NiGa ferromagnetic shape memory alloy shows the existence of a 7M monoclinic modulated structure at room temperature (RT). The structure of Mn 2 NiGa is found to be highly dependent on residual stress. For higher stress, the structure is tetragonal at RT, and for intermediate stress it is 7M monoclinic. However, only when the stress is considerably relaxed, the structure is cubic, as is expected at RT since the martensitic transition temperature is 230 K.

  14. Ferromagnetic (Ga,Mn)As layers and nanostructures: control of magnetic anisotropy by strain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Wenisch, Jan

    2008-07-01

    This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution X-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter. (orig.)

  15. Cobalt doped CuMnOx catalysts for the preferential oxidation of carbon monoxide

    Science.gov (United States)

    Dey, Subhashish; Dhal, Ganesh Chandra; Mohan, Devendra; Prasad, Ram; Gupta, Rajeev Nayan

    2018-05-01

    Carbon monoxide (CO) is a poisonous gas, recognized as a silent killer for the 21st century. It is produced from the partial oxidation of carbon containing compounds. The catalytic oxidation of CO receives a huge attention due to its applications in different fields. In the present work, hopcalite (CuMnOx) catalysts were synthesized using a co-precipitation method for CO oxidation purposes. Also, it was doped with the cobalt by varying concentration from 1 to 5wt%. It was observed that the addition of cobalt into the CuMnOx catalyst (by the deposition-precipitation method) improved the catalytic performance for the low-temperature CO oxidation. CuMnOx catalyst doped with 3wt% of cobalt exhibited most active performance and showed the highest activity than other cobalt concentrations. Different analytical tools (i.e. XRD, FTIR, BET, XPS and SEM-EDX) were used to characterize the as-synthesized catalysts. It was expected that the introduction of cobalt will introduce new active sites into the CuMnOx catalyst that are associated with the cobalt nano-particles. The order of calcination strategies based on the activity for cobalt doped CuMnOx catalysts was observed as: Reactive calcinations (RC) > flowing air > stagnant air. Therefore, RC (4.5% CO in air) route can be recommended for the synthesis of highly active catalysts. The catalytic activity of doped CuMnOx catalysts toward CO oxidation shows a correlation among average oxidation number of Mn and the position and the nature of the doped cobalt cation.

  16. Effect of foliar applied (Zn, Fe, Cu and Mn) in citrus production

    International Nuclear Information System (INIS)

    Khurshid, F.; Sarwar, S.; Khattak, R.A.

    2008-01-01

    A study was conducted to evaluate the impact of micronutrients (Zn, Fe, Cu and Mn) on sweet orange (Citrus Sinensis L.), blood red var., on farmer's orchard at Khanpur, district Haripur, NWFP, during 2002-03. Micronutrients were applied in foliar sprays over the canopy of each tree. The main effects and interactions of Zinc sulphate (Zn), iron sulphate (Fe), Copper Sulphate (Cu) and Manganese Sulphate (Mn) were studied in factorial combinations. A basal dose of nitrogen, phosphorus and potassium was applied at the rate 1.5, 1 and 1 kg tree/sup -1/. Zn, Fe, Cu and Mn were applied alone and in various combinations at the rate 0.115, 0.057, 0.05 and 0.13 kg in 100 liters of water. Application of micronutrients significantly increased Zn, Fe, Cu and Mn concentrations in leaves, compared with control. Zn treatments significantly increased the yield, number of fruit and total sugar. Manganese treatments significantly increased the total soluble solids and reduced the acidity of fruit juice. Other quality parameters, including fruit size, percent peel, percent pulp, sugar as well as total soluble solids, were improved with the application of Zn, Fe, Cu and Mn. (author)

  17. Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

    KAUST Repository

    Barbe, Jeremy; Eid, Jessica; Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael; Agrawal, Rakesh; Del Gobbo, Silvano

    2016-01-01

    Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning

  18. Suppression of antiferromagnetic interactions through Cu vacancies in Mn-substituted CuInSe2 chalcopyrites

    International Nuclear Information System (INIS)

    Yao Jinlei; Brunetta, Carl D; Aitken, Jennifer A

    2012-01-01

    Stoichiometric and Cu-poor Cu 0.95-x Mn 0.05 InSe 2 (x = 0-0.20) compounds were synthesized by high-temperature, solid-state reactions. The presence of copper vacancies is revealed by Rietveld refinements of combined neutron and x-ray powder diffraction data. The antiferromagnetic interaction is depressed by the copper deficiency, which may be explained as the competition between the antiferromagnetic Mn-Se-eMn superexchange interaction and the hole-mediated ferromagnetic exchange induced by the copper vacancy. The introduction of copper vacancies is proposed to be a viable route to impart carrier-mediated ferromagnetic exchange in the chalcopyrite-based dilute magnetic semiconductors. (paper)

  19. Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A Harsono Soepardjo

    2010-10-01

    Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

  20. Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

    Science.gov (United States)

    Glunk, M.; Daeubler, J.; Dreher, L.; Schwaiger, S.; Schoch, W.; Sauer, R.; Limmer, W.; Brandlmaier, A.; Goennenwein, S. T. B.; Bihler, C.; Brandt, M. S.

    2009-05-01

    We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of (Ga,Mn)As layers with 5% Mn on relaxed graded (In,Ga)As/GaAs templates with different In concentration. The hole density, the Curie temperature, and the relaxed lattice constant of the as-grown and annealed (Ga,Mn)As layers turned out to be essentially unaffected by the strain. Angle-dependent magnetotransport measurements performed at different magnetic-field strengths were used to probe the magnetic anisotropy. The measurements reveal a pronounced linear dependence of the uniaxial out-of-plane anisotropy on both strain and hole density. Whereas the uniaxial and cubic in-plane anisotropies are nearly constant, the cubic out-of-plane anisotropy changes sign when the magnetic easy axis flips from in-plane to out-of-plane. The experimental results for the magnetic anisotropy are quantitatively compared with calculations of the free energy based on a mean-field Zener model. Almost perfect agreement between experiment and theory is found for the uniaxial out-of-plane and cubic in-plane anisotropy parameters of the as-grown samples. In addition, magnetostriction constants are derived from the anisotropy data.

  1. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat; Dogan, Fatih; Kum, Hyun; Manchon, Aurelien; Bhattacharya, Pallab

    2012-01-01

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  2. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat

    2012-07-16

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  3. Tunable band gap in epitaxial ferroelectric Ho(Mn,Ga)O{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Daesu; Noh, Tae Won, E-mail: twnoh@snu.ac.kr [Center for Correlated Electron Systems, Institute for Basic Science, Seoul 151-742 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2016-05-09

    Ferroelectrics have recently attracted attention as a new class of materials for use in optical and photovoltaic devices. We studied the electronic properties in epitaxially stabilized ferroelectric hexagonal Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} (x = 0, 0.33, 0.67, and 1) thin films. Our films exhibited systematic changes in electronic structures, such as bandgap and optical transitions, according to the Ga concentration. In particular, the bandgap increased systematically from 1.4 to 3.2 eV, including the visible light region, with increasing Ga concentration from x = 0 to 1. These systematic changes, attributed to lattice parameter variations in epitaxial Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} films, should prove useful for the design of optoelectronic devices based on ferroelectrics.

  4. Suppression of Electron Spin Relaxation in Mn-Doped GaAs

    Science.gov (United States)

    Astakhov, G. V.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Lazarev, M. V.; Tkachuk, M. N.; Kusrayev, Yu. G.; Kiessling, T.; Ossau, W.; Molenkamp, L. W.

    2008-08-01

    We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

  5. Qualitative analysis of As, Ba, Cd, Cr, Zn, Fe, Mn, K, Hg, Pb y Cu, as constituents of Amatitlan Lake sediment by XRF

    International Nuclear Information System (INIS)

    Beltran, P.A.E.; Morales, E.A.

    1987-10-01

    Samples of fifteen sampling points were analyzed. Molybdenum X-ray tube with secondary excitation assembly, SiLi detector and deconvolution software AXIL were employed; self-standardization method based upon incoherent ratio was used for quantitative analysis of some elements. Ca, P, S, Ti, Mn, Fe, Cr, Zn, Cu, Ni, Ga, As, Pb, Ge, Sr and Pb, were found. As, Pb and Cu concentrations lower than 109 mg/lt, 119 mg/lt, and 500mg/lt, respectively, were measured. Hg was not detected. (author)

  6. Spin disordered resistivity of the Heusler Ni.sub.2./sub.MnGa-based alloys

    Czech Academy of Sciences Publication Activity Database

    Kamarád, Jiří; Kaštil, Jiří; Albertini, F.; Fabbrici, S.; Arnold, Zdeněk

    2017-01-01

    Roč. 131, č. 4 (2017), s. 1072-1074 ISSN 0587-4246 R&D Projects: GA ČR GAP204/12/0692 Institutional support: RVO:68378271 Keywords : spin disordered resistivity * magnetoresistance * Heusler alloys * Ni 2 MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.469, year: 2016

  7. Phase transformation and microstructure study of the as-cast Cu-rich Cu-Al-Mn ternary alloys

    Directory of Open Access Journals (Sweden)

    Holjevac-Grgurić T.

    2017-01-01

    Full Text Available Four Cu-rich alloys from the ternary Cu-Al-Mn system were prepared in the electric-arc furnace and casted in cylindrical moulds with dimensions: f=8 mm and length 12 mm. Microstructural investigations of the prepared samples were performed by using optical microscopy (OM and scanning electron microscopy, equipped by energy dispersive spectroscopy (SEM-EDS. Assignation of crystalline phases was confirmed by XRD analysis. Phase transition temperatures were determined using simultaneous thermal analyzer STA DSC/TG. Phase equilibria calculation of the ternary Cu-Al-Mn system was performed using optimized thermodynamic parameters from literature. Microstructure and phase transitions of the prepared as-cast alloys were investigated and experimental results were compared with the results of thermodynamic calculations.

  8. Optical anisotropy and domain structure of multiferroic Ni-Mn-Ga and Co-Ni-Ga Heusler-type alloys

    International Nuclear Information System (INIS)

    Ivanova, A I; Gasanov, O V; Kaplunova, E I; Grechishkin, R M; Kalimullina, E T; Zalyotov, A B

    2015-01-01

    A study is made of the reflectance anisotropy of martensitic and magnetic domains in ferromagnetic shape memory alloys (FSMA) Ni-Mn-Ga and Co-Ni-Ga. The reflectance of metallographic sections of these alloys was measured in the visible with the aid of standard inverted polarized light microscope with a 360° rotatable specimen stage. Calculations are presented for the estimation of image contrast values between neighboring martensite twins. Qualitative and quantitative observations and angular measurements in reflected polarized light proved to be useful for the analysis of specific features of the martensite microstructure of multiferroic materials

  9. X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Martinez-Criado, G.; Salome, M.; Susini, J. [ESRF, Polygone Scientifique Louis Neel, 6 rue Jules Horowitz, 38000 Grenoble (France); Olguin, D. [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D.F. (Mexico); Dhar, S.; Ploog, K. [Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2006-06-15

    We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga{sub 1-x}Mn{sub x}N (0.06Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after the edge, separated around 15 eV above the pre-edge structure. We have compared the position of the edge with that of MnO (Mn{sup 2+}) and Mn{sub 2}O{sub 3} (Mn{sup 3+}). All samples studied present the same Mn oxidation state, 2{sup +}. In order to interprete the near-edge structure, we have performed ab initio calculations with a 2 x 2 x 1supercell ({proportional_to}6% Mn) using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of Mn anti-bonding t{sub 2g} bands, which are responsible for the pre-edge absorption. The shoulder and main absorption peaks are due to transitions from the valence band 1s-states of Mn to the p-contributions of the conduction bands. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Interdiffusion coefficients and atomic mobilities in fcc Cu-Fe-Mn alloys

    Directory of Open Access Journals (Sweden)

    Li J.

    2014-01-01

    Full Text Available In the present work, the interdiffusion coefficients in fcc Cu-Fe-Mn alloys were experimentally determined via a combination of solid/solid diffusion couples, electron probe microanalysis (EPMA technique and Matano-Kirkaldy method. Based on the reliable thermodynamic description of fcc phase in the Cu-Fe-Mn system available in the literature as well as the ternary diffusion coefficients measured in the present work, the atomic mobilities in fcc Cu-Fe-Mn alloys were assessed by utilizing the DICTRA (Diffusion Controlled TRAnsformation software package. The calculated interdiffusion coefficients based on the assessed atomic mobilities agree well with most of the experimental data. The comprehensive comparison between various model-predicted diffusion properties and the measured data, including the concentration penetration profiles, interdiffusion flux profile, and diffusion paths, further verify the reliability of the presently obtained atomic mobilities.

  11. Cumulation of Cu, Zn, Cd, and Mn in Plants of Gardno Lake

    Directory of Open Access Journals (Sweden)

    Trojanowski J.

    2013-04-01

    Full Text Available In the present paper there have been shown the results of research on yhe content of Zn, Cd, Cu, Mn and Pb in chosen plants of Lake Gardno.The biggest concentration of those metals has been observed in Potamogton natans and Elodea canadensis, on average Zn – 34.9, Pb -2.77, Cd – 0.62, Cu – 3.24 and Mn – 257.4 μg g-1. It has been found that the over-ground parts of the plants under analysis cumulate several times less of heavy metals than their roots. The determined enrichment factors enabled the researchers to state that Cu in the examined plants is of natural origin while Mn, Cd and Zn – of anthropogenic origin.

  12. Magnetoresistance in ferromagnetic shape memory alloy NiMnFeGa

    International Nuclear Information System (INIS)

    Liu, Z.H.; Ma, X.Q.; Zhu, Z.Y.; Luo, H.Z.; Liu, G.D.; Chen, J.L.; Wu, G.H.; Zhang Xiaokai; Xiao, John Q.

    2011-01-01

    The magnetoresistance (MR){=[R(H)-R(0)]/R(0)} properties in ferromagnetic shape memory alloy of NiMnFeGa ribbons and single crystals, and NiFeGa ribbons have been investigated. It is found that the NiMnFeGa melt-spun ribbon exhibited GMR effect, arising from the spin-dependent scattering from magnetic inhomogeneities consisting of antiferromagnetically coupled Mn atoms in B2 structure. In the absence of these magnetic inhomogeneities, Heusler alloys seem to show a common linear MR behavior at around 0.8T C , regardless of sample structures. This may be explained by the s-d model. At low temperatures, conventional AMR behaviors due to the spin-orbital coupling are observed. This is most likely due to the diminished MR from s-d model because of much less spin fluctuation, and is not associated with martensite phase. MR anomaly at intermediate field (ρ perpendicular >ρ || ) is also observed in single crystal samples, which may be related to unique features of Heusler alloys. - Highlights: → NiMnFeGa melt-spun ribbon exhibited GMR effect with a large negative MR up to -13%. → GMR behavior is arising from the spin-dependent scattering from magnetic inhomogeneities. → In the absence of these magnetic inhomogeneities, Heusler alloys seem to show a common linear MR behavior at around 0.8T C . → Conventional AMR behaviors due to the spin-orbital coupling are observed in NiMnFeGa single crystal and Ni 2 FeGa ribbon samples at low temperatures.

  13. Fundamental absorption edge in CuIn5Se8 and CuGa3Se5 single crystals

    International Nuclear Information System (INIS)

    Leon, M.; Merino, J.M.; Levcenko, S.; Nateprov, A.; Tezlevan, V.; Arushanov, E.; Syrbu, N.N.

    2006-01-01

    Optical absorption spectra of CuIn 5 Se 8 and CuGa 3 Se 5 single crystals have been investigated. The energy gap E g for CuIn 5 Se 8 (CuGa 3 Se 5 ) was found to be varied from 1.27(1.79) to 1.21(1.71) eV in the temperature range between 10 and 300 K. The temperature dependence of E g was studied by means of the Einstein model and the Paessler model. The Einstein temperature {222(267)K}, the Debye temperature {310(380)K}, a dimensionless constant related to the electron-phonon coupling {1.62(2.65)} as well as an effective energy {20 (24) meV} and a cut-off phonon energy {35(39) meV} have been estimated for CuIn 5 Se 8 (CuGa 3 Se 5 ). It was also found that the major contribution of phonons to the shift of E g versus temperature in CuIn 5 Se 8 (CuGa 3 Se 5 ) is mainly from optical phonons. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  14. Study of Cu-Al-Ni-Ga as high-temperature shape memory alloys

    Science.gov (United States)

    Zhang, Xin; Wang, Qian; Zhao, Xu; Wang, Fang; Liu, Qingsuo

    2018-03-01

    The effect of Ga element on the microstructure, mechanical properties and shape memory effect of Cu-13.0Al-4.0Ni- xGa (wt%) high-temperature shape memory alloy was investigated by optical microscopy, SEM, XRD and compression test. The microstructure observation results showed that the Cu-13.0Al-4.0Ni- xGa ( x = 0.5 and 1.0) alloys displayed dual-phase morphology which consisted of 18R martensite and (Al, Ga)Cu phase, and their grain size was about several hundred microns, smaller than that of Cu-13.0Al-4.0Ni alloy. The compression test results proved that the mechanical properties of Cu-13.0Al-4.0Ni- xGa alloys were improved by addition of Ga element owing to the grain refinement and solid solution strengthening, and the compressive fracture strains were 11.5% for x = 0.5 and 14.9% for x = 1.0, respectively. When the pre-strain was 8%, the shape memory effect of 4.2 and 4.6% were obtained for Cu-13.0Al-4.0Ni-0.5 Ga and Cu-13.0Al-4.0Ni-1.0 Ga alloys after being heated to 400 °C for 1 min.

  15. Theory of weak localization in ferromagnetic (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Garate, I.; Sinova, J.; Jungwirth, Tomáš; MacDonald, A.

    2009-01-01

    Roč. 79, č. 15 (2009), 155702/1-155702/13 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : electrical conductivity * exchange interactions (electron) * ferromagnetic materials * gallium arsenide * magnetic semiconductors * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.155207

  16. Cathodoluminescence and Thermoluminescence of Undoped LTB and LTB:A (A = Cu, Ag, Mn)

    Science.gov (United States)

    2013-03-01

    and Mn Ions for Nonlinear Applications.” Acta Physica Polonica A 107, no. 3 (2005): 507-518. [22] Kimball Physics, Inc.. Operator’s Manual: EMG...CATHODOLUMINESCENCE AND THERMOLUMINESCENCE OF UNDOPED LTB AND LTB:A ( A = Cu, Ag, Mn) THESIS Zachary L. Hadfield, USA AFIT-ENP-13-M-13...STATEMENT A . APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED The views expressed in this thesis are those of the author and

  17. Location of Mn sites in ferromagnetic Ga.sub.1-x./sub.Mn.sub.x./sub. As studied by means of X-ray diffuse scattering holography

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Kub, Jiří; Bussetto, E.; Lausi, A.; Cukr, Miroslav; Novák, Vít; Olejník, Kamil; Wright, J.P.; Fábry, Jan

    2006-01-01

    Roč. 39, - (2006), s. 735-738 ISSN 0021-8898 R&D Projects: GA AV ČR IAA100100529; GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs ferromagnetic semiconductors * x-ray holography * diffuse scattering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.495, year: 2006

  18. Effect of CeLa addition on the microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy

    International Nuclear Information System (INIS)

    Du, Jiandi; Ding, Dongyan; Xu, Zhou; Zhang, Junchao; Zhang, Wenlong; Gao, Yongjin; Chen, Guozhen; Chen, Weigao; You, Xiaohua; Chen, Renzong; Huang, Yuanwei; Tang, Jinsong

    2017-01-01

    Development of high strength lithium battery shell alloy is highly desired for new energy automobile industry. The microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy with different CeLa additions were investigated through optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rietveld refinement and tensile testing. Experimental results indicate that Al 8 Cu 4 Ce and Al 6 Cu 6 La phases formed due to CeLa addition. Addition of 0.25 wt.% CeLa could promote the formation of denser precipitation of Al 20 Cu 2 Mn 3 and Al 6 (Mn, Fe) phases, which improved the mechanical properties of the alloy at room temperature. However, up to 0.50 wt.% CeLa addition could promote the formation of coarse Al 8 Cu 4 Ce phase, Al 6 Cu 6 La phase and Al 6 (Mn, Fe) phase, which resulted in weakened mechanical properties. - Highlights: •Al-Cu-Mn-Mg-Fe alloys with different CeLa addition were fabricated through casting and rolling. •Al 8 Cu 4 Ce and Al 6 Cu 6 La phases formed after CeLa addition. •Addition of 0.25 wt.% CeLa promoted formation of denser precipitates of Al 20 Cu 2 Mn 3 and Al 6 (Mn, Fe). •Mechanical properties of the alloy was improved after 0.25 wt.% CeLa addition.

  19. In vivo evaluation of a radiogallium-labeled bifunctional radiopharmaceutical, Ga-DOTA-MN2, for hypoxic tumor imaging.

    Science.gov (United States)

    Sano, Kohei; Okada, Mayumi; Hisada, Hayato; Shimokawa, Kenta; Saji, Hideo; Maeda, Minoru; Mukai, Takahiro

    2013-01-01

    On the basis of the findings obtained by X-ray crystallography of Ga-DOTA chelates and the drug design concept of bifunctional radiopharmaceuticals, we previously designed and synthesized a radiogallium-labeled DOTA chelate containing two metronidazole moieties, (67)Ga-DOTA-MN2, for hypoxic tumor imaging. As expected, (67)Ga-DOTA-MN2 exhibited high in vivo stability, although two carboxyl groups in the DOTA skeleton were conjugated with metronidazole moieties. In this study, we evaluated (67/68)Ga-DOTA-MN2 as a nuclear imaging agent for hypoxic tumors. (67)Ga-labeling of DOTA-MN2 with (67)GaCl(3) was achieved with high radiochemical yield (>85%) by 1-min of microwave irradiation (50 W). The pharmacokinetics of (67)Ga-DOTA-MN2 were examined in FM3A tumor-bearing mice, and compared with those of (67)Ga-DOTA-MN1 containing one metronidazole unit and (67)Ga-DOTA. Upon administration, (67)Ga-DOTA-MN2 exhibited higher accumulation in the implanted tumors than (67)Ga-DOTA. Tumor-to-blood ratios of (67)Ga-DOTA-MN2 were about two-fold higher than those of (67)Ga-DOTA-MN1. Autoradiographic analysis showed the heterogeneous localization of (67)Ga-DOTA-MN2 in the tumors, which corresponds to hypoxic regions suggested by well-established hypoxia marker drug, pimonidazole. Furthermore, in positron emission tomography (PET) study, the tumors of mice administered (68)Ga-labeled DOTA-MN2 were clearly imaged by small-animal PET at 1 h after administration. This study demonstrates the potential usefulness of (67/68)Ga-DOTA-MN2 as a nuclear imaging agent for hypoxic tumors and suggests that two functional moieties, such as metronidazole, can be conjugated to radiogallium-DOTA chelate without reducing the complex stability. The present findings provide useful information about the chemical design of radiogallium-labeled radiopharmaceuticals for PET and single photon emission computed tomography (SPECT) studies.

  20. Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

    Science.gov (United States)

    Koo, Jaseok; Kim, Sammi; Cheon, Taehoon; Kim, Soo-Hyun; Kim, Woo Kyoung

    2018-03-02

    Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se 2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe 2 and Cu(InGa)Se 2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se 2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min.

  1. Low-temperature magnetization of (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Wang, K. Y.; Edmonds, K. W.; Sawicki, M.; Polini, M.; Sinova, J.; MacDonald, A. H.; Campion, R. P.; Zhao, L.X.; Farley, N.R.S.; Johal, T.K.; van der Laan, G.; Foxon, C. T.; Gallagher, B. L.

    2006-01-01

    Roč. 73, č. 16 (2006), 165205/1-165205/11 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; FENIKS(XE) EC:G5RD-CT-2001-00535; US Department of Energy(US) DE-FG03-02ER45958 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * magnetization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

  2. TL and OSL properties of Mn2+-doped MgGa2O4 phosphor

    Science.gov (United States)

    Luchechko, A.; Zhydachevskyy, Ya; Maraba, D.; Bulur, E.; Ubizskii, S.; Kravets, O.

    2018-04-01

    The oxide MgGa2O4 spinel ceramics doped with Mn2+ ions was synthesized by a solid-state reaction at 1200 °C in air. The activator concentration was equal 0.05 mol% of MnO. Phase purity of the synthesized samples was analyzed by X-ray diffraction technique. This spinel ceramics show efficient green emission in the range from 470 to 550 nm with a maximum at about 505 nm under UV or X-ray excitations, which is due to Mn2+ ions. MgGa2O4: Mn2+ exhibits intense thermoluminescence (TL) and optically stimulated luminescence (OSL) after influence of ionizing radiation. Are complex nature of the TL glow curves is associated with a significant number of structural defects that are responsible for the formation of shallow and deep electron traps. In this work, time-resolved OSL characteristics of the samples exposed to beta particles are reported for the first time. A light from green LED was used for optical stimulation. Obtained TL and OSL results suggest MgGa2O4:Mn2+ as perspective material for further research and possible application in radiation dosimetry.

  3. Study of the Local Environment of Mn Ions Implanted in GaSb

    International Nuclear Information System (INIS)

    Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Barcz, A.; Hallen, A.; Arvanitis, D.

    2010-01-01

    The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation. (author)

  4. The micro-magnetic structures of Mn sup + ion-implanted GaSb

    CERN Document Server

    Zhang Fu Qiang; Liu Zhi Kai

    2003-01-01

    The micro-magnetic structures of Mn sup + ion-implanted GaSb are studied using a magnetic force microscope (MFM). MFM images reveal that there are many magnetic domains with different magnetization directions in our samples. The magnetic domain structures and the magnetization direction of typical MFM patterns are analyzed by numeric simulation. (author)

  5. Magnetoelastic effects and magnetic anisotropy in Ni.sub.2./sub.MnGa polycrystals

    Czech Academy of Sciences Publication Activity Database

    Albertini, F.; Morellon, L.; Algarabel, P. A.; Ibarra, M. R.; Pareti, L.; Arnold, Zdeněk; Calestini, G.

    2001-01-01

    Roč. 89, č. 10 (2001), s. 5614-5617 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z1010914 Keywords : linear thermal expansion * magnetostriction * Ni_2MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.128, year: 2001

  6. Martensitic transformations in Ni-Mn-Ga system affected by external fields

    International Nuclear Information System (INIS)

    Chernenko, V.; Babii, O.; L'vov, V.; McCormick, P.G.

    2000-01-01

    The influence of hydrostatic pressure, uniaxial stress and magnetic field on the martensitic transformation temperatures for the ferromagnetic single crystalline Ni-Mn-Ga alloys is studied. It is shown that the experimental results are satisfactorily described by the Landau theory. Ni-Mn-Ga L2 1 -type ordered alloys exhibit a number of the first order and weak first order structural transformations in a ferromagnetic or paramagnetic parent phase depending on the alloy composition and being either thermally or stress activated. Most of these phase transformations are of the martensitic type, i.e., they are accompanied by the spontaneous elastic strains forming a multicomponent order parameter in the Landau expansion for the Gibbs potential. In this work we analyze the influence of the external fields (mechanical and magnetic) on the martensitic transformation (MT) from cubic parent phase (P) to five-layered martensitic one (5M-martensite) usually exhibited by the ferromagnetic ordered Ni-Mn-Ga alloys. In accordance with, we treat the 5M-martensite as a twinned tetragonal phase and, so, describe the experimental results in the framework of the theory of cubic-tetragonal MT. The original experimental data of high magnetic field influence on MT in near stoichiometric Ni 2 MnGa compound are presented to compare with the theoretical estimations. (orig.)

  7. Effect of intermartensite transformation on twinning stress in Ni-Mn-Ga 10 M martensite

    Czech Academy of Sciences Publication Activity Database

    Straka, L.; Sozinov, A.; Drahokoupil, Jan; Kopecký, V.; Hänninen, H.; Heczko, Oleg

    2013-01-01

    Roč. 114, č. 6 (2013), "063504-1"-"063504-7" ISSN 0021-8979 Institutional research plan: CEZ:AV0Z10100520 Keywords : twinning stress * Ni-Mn-Ga * intermartensite transformation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  8. Effect of alloying elements on the shape memory properties of ductile Cu-Al-Mn alloys

    International Nuclear Information System (INIS)

    Sutou, Y.; Kainuma, R.; Ishida, K.

    1999-01-01

    The effect of alloying elements on the M s temperature, ductility and the shape memory properties of Cu-Al-Mn ductile shape memory (SM) alloys was investigated by differential scanning calorimetry, cold-rolling and tensile test techniques. It was found that the addition of Au, Si and Zn to the Cu 73 -Al 17 -Mn 10 alloy stabilized the martensite (6M) phase increasing the M s temperature, while the addition of Ag, Co, Cr, Fe, Ni, Sn and Ti decreased the stability of the martensite phase, decreasing the M s temperature. The SM properties were improved by the addition of Co, Ni, Cr and Ti. (orig.)

  9. Effect of Thermomagnetic Treatment on Structure and Properties of Cu-Al-Mn Alloy.

    Science.gov (United States)

    Titenko, A N; Demchenko, L D; Perekos, A O; Gerasimov, O Yu

    2017-12-01

    The paper studies the influence of magnetic field on magnetic and mechanical properties of Cu-Mn-Al alloy under annealing. The comparative analysis of the magnetic field orientation impact on solid solution decomposition processes in a fixed annealing procedure is held using the methods of low-field magnetic susceptibility, specific magnetization, and microhardness test. The paper highlights changes in the magnetic and mechanical properties of Cu-Al-Mn alloy as the result of change in a critical size of forming precipitated ferromagnetic phase and determines correlation in the behavior of magnetic and mechanical properties of the alloy, depending on a critical nucleus size of forming precipitated ferromagnetic phase.

  10. Different microstructures of mobile twin boundaries in 10 M modulated Ni-Mn-Ga martensite

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Straka, L.; Seiner, Hanuš

    2013-01-01

    Roč. 61, č. 2 (2013), 622-631 ISSN 1359-6454 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GAP107/11/0391 Institutional support: RVO:68378271 ; RVO:61388998 Keywords : martensitic twin microstructure * twinning interfaces * Ni-Mn-Ga martensite * mobility of twin boundary * magnetic shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.940, year: 2013 http://www.sciencedirect.com/science/article/pii/S135964541200732X

  11. Optical and structural properties of Cu-doped β-Ga2O3 films

    International Nuclear Information System (INIS)

    Zhang Yijun; Yan Jinliang; Li Qingshan; Qu Chong; Zhang Liying; Xie Wanfeng

    2011-01-01

    Graphical abstract: Highlights: → We prepare polycrystalline Cu-doped β-Ga2O3 films. → Cu dopants cause poor crystal quality and shrinkage of the optical band gap. → Cu-doping enhances the UV and blue emission. → A new blue emission peak centre at 475 nm appears by Cu-doping. → Cu dopants decrease the optical transmittance. - Abstract: The intrinsic and Cu-doped β-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in an argon and oxygen mixture ambient. The effects of the Cu doping and the post thermal annealing on the optical and structural properties of the β-Ga 2 O 3 films were studied. The surface morphology, microstructure, optical transmittance, optical absorption, optical energy gap and photoluminescence of the β-Ga 2 O 3 films were significantly changed after Cu-doping. After post thermal annealing, Polycrystalline β-Ga 2 O 3 films were obtained, the transmittance decreased. After Cu-doping, the grain size decreased, the crystal quality deteriorated and the optical band gap shrunk. The UV, blue and green emission bands were observed and discussed. The UV and blue emission were enhanced and a new blue emission peak centred at 475 nm appeared by Cu-doping.

  12. Microstructures and Properties Evolution of Al-Cu-Mn Alloy with Addition of Vanadium

    Directory of Open Access Journals (Sweden)

    Fansheng Meng

    2016-12-01

    Full Text Available The effect of the vanadium addition on the microstructure, the precipitation behavior, and the mechanical properties of the Al-5.0Cu-0.4Mn alloy has been studied. The as-cast Al-5.0Cu-0.4Mn alloy was produced by squeeze casting and the heat treatment was carried out following the standard T6 treatment. It is shown that, with the addition of V, grain refinement of aluminum occurred. During heat treatment, the addition of V accelerates the precipitation kinetics of θ′ (Al2Cu phase along the grain boundaries, and promotes the growth rate of the θ′ in the α(Al matrix. Meanwhile, the addition of V retards the precipitation of T (Al20Cu2Mn3 phase. The tensile strength of the Al-5.0Cu-0.4Mn alloy increases with the increase of V content, which can be explained by combined effects of the solid solution strengthening and precipitate strengthening. However, excessively high V addition deteriorates the mechanical properties by forming brittle coarse intermetallic phases.

  13. Spectro-photometric determinations of Mn, Fe and Cu in aluminum master alloys

    Science.gov (United States)

    Rehan; Naveed, A.; Shan, A.; Afzal, M.; Saleem, J.; Noshad, M. A.

    2016-08-01

    Highly reliable, fast and cost effective Spectro-photometric methods have been developed for the determination of Mn, Fe & Cu in aluminum master alloys, based on the development of calibration curves being prepared via laboratory standards. The calibration curves are designed so as to induce maximum sensitivity and minimum instrumental error (Mn 1mg/100ml-2mg/100ml, Fe 0.01mg/100ml-0.2mg/100ml and Cu 2mg/100ml-10mg/ 100ml). The developed Spectro-photometric methods produce accurate results while analyzing Mn, Fe and Cu in certified reference materials. Particularly, these methods are suitable for all types of Al-Mn, Al-Fe and Al-Cu master alloys (5%, 10%, 50% etc. master alloys).Moreover, the sampling practices suggested herein include a reasonable amount of analytical sample, which truly represent the whole lot of a particular master alloy. Successive dilution technique was utilized to meet the calibration curve range. Furthermore, the workout methods were also found suitable for the analysis of said elements in ordinary aluminum alloys. However, it was observed that Cush owed a considerable interference with Fe, the later one may not be accurately measured in the presence of Cu greater than 0.01 %.

  14. Complex impedance spectra of chip inductor using Li-Zn-Cu-Mn ferrite

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Naoe, Masayuki; Yamada, Yoshihiro

    2006-01-01

    A multi-layer chip inductor (MCI) was fabricated using polycrystalline Li-Zn-Cu-Mn ferrite and the green-sheet technique, and its complex impedance spectrum was evaluated with the help of numerical calculations. The complex impedance spectra of the MCI component using Ni-Zn-Cu ferrite, which have been widely used for this application, were very sensitive to the residual stress and deviated much from the calculated values; however, it was found that the complex impedance spectrum of the MCI component using Li-Zn-Cu-Mn ferrite is quite well reproduced by calculation, where the complex permittivity and permeability of the polycrystalline ferrite as well as the MCI dimensions, were used. It implied that the magneto-striction effect was negligible in case of MCI using Li-Zn-Cu-Mn ferrite, and that the difference was related to magneto-strictive coefficient of the polycrystalline ferrite. Consequently, utilization of Li-Zn-Cu-Mn ferrite enabled us to easily design the complex impedance of MCI component

  15. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-01-01

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  16. Paduan Ni-Cu-Mn Sebagai Logam Alternatif Kedokteran Gigi: Efek Perendaman dalam Larutan 0,1% Sodium Sulfida

    Directory of Open Access Journals (Sweden)

    Bambang Irawan

    2015-09-01

    Full Text Available In this study, the ternary base alloys of nickel-copper-manganese (Ni-Cu-Mn alloys are prepared and these ternary alloys systems, which were constituted from higher nickel and lower copper contents than copper-base alloy ones, were evaluated by a tarnish test. Tarnish tests conducted in a 0,1% sodium sulphide solution (pH=12 at 37◦C. All test specimens were case into square paddles of 15 mm x 20 mm x 2,5 mm using the lost-wax technique with a phosphate-bonded investment. The surface of the specimens were then prepared with abrasion papers down to a 600 grit finish. Tarnish attack was quantitatively evaluated by Fibre colorimetry. The results of tarnish test showed that ternary nickel-copper-manganese alloys, such as 40Ni-30Cu-30Mn and 50Ni-30Cu-20Mn, have superior tarnishment resistance than other alloys, e.g. 20Ni-40Cu-40Mn, 30Ni-30Cu-40Mn and 30Ni-40Cu-30Mn. It was also found that 40Ni-30Cu-30Mn and 50Ni-30Cu-20Mn alloys have lower values of colour change vector than the other alloys given above.

  17. Crystal field and low energy excitations measured by high resolution RIXS at the L edge of Cu, Ni and Mn

    DEFF Research Database (Denmark)

    Ghiringhelli, G.; Piazzalunga, A.; Wang, X.

    2009-01-01

    of the 3d transition metals with unprecedented energy resolution, of the order of 100 meV for Mn, Ni and Cu. We present here some preliminary spectra on CuO, malachite, NiO, , MnO and . The dd excitations are very well resolved allowing accurate experimental evaluation of 3d state energy splitting. The low...

  18. Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Sharif, Rehana; Husnain, G

    2009-01-01

    Mn ions were implanted into GaN thin films with six doses ranging from 10 14 to 5 x 10 16 cm -2 and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M s and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

  19. Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Sharif, Rehana [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Husnain, G, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 (China)

    2009-07-07

    Mn ions were implanted into GaN thin films with six doses ranging from 10{sup 14} to 5 x 10{sup 16} cm{sup -2} and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M{sub s} and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

  20. Phase transition of Ni-Mn-Ga alloy powders prepared by vibration ball milling

    International Nuclear Information System (INIS)

    Tian, B.; Chen, F.; Tong, Y.X.; Li, L.; Zheng, Y.F.; Liu, Y.; Li, Q.Z.

    2011-01-01

    Research highlights: → The vibration ball milling with a high milling energy introduces the atomic disorder and large lattice distortion in the alloy during milling and makes the formation of disordered fcc structure phase in the alloy. → The transition temperature and activation energy for disordered fcc → disordered bcc are ∼320 o C and 209 ± 8 kJ/mol, respectively. → The alloy powders annealed at 800 o C for 1 h show a one-stage martensitic transformation with quite lower latent heat compared to the bulk alloy. - Abstract: This study investigated the phase transformation of the flaky shaped Ni-Mn-Ga powder particles with thickness around 1 μm prepared by vibration ball milling and post-annealing. The SEM, XRD, DSC and ac magnetic susceptibility measurement techniques were used to characterize the Ni-Mn-Ga powders. The structural transition of Heusler → disordered fcc occurred in the powders prepared by vibration ball milling (high milling energy) for 4 h, which was different from the structural transition of Heusler → disordered fct of the powders fabricated by planetary ball milling (low milling energy) for 4 h. The two different structures after ball milling should be due to the larger lattice distortion occurred in the vibration ball milling process than in the planetary ball milling process. The structural transition of disordered fcc → disordered bcc took place at ∼320 o C during heating the as-milled Ni-Mn-Ga powders, which was attributed to the elimination of lattice distortion caused by ball milling. The activation energy for this transition was 209 ± 8 kJ/mol. The Ni-Mn-Ga powder annealed at 800 o C mainly contained Heusler austenite phase at room temperature and showed a low volume of martensitic transformation upon cooling. The inhibition of martensitic transformation might be attributed to the reduction of grain size in the annealed Ni-Mn-Ga particles.

  1. Structure, magnetism, and electron-transport properties of Mn2CrGa-based nanomaterials

    Directory of Open Access Journals (Sweden)

    Wenyong Zhang

    2016-05-01

    Full Text Available Mn2CrGa in the disordered cubic structure has been synthesized using rapid quenching and subsequent annealing. The cubic phase transforms to a stable tetragonal phase when a fraction of Cr or Ga is replaced by Pt or Al, respectively. All samples are ferrimagnetic with high Curie temperatures (Tc; Mn2CrGa exhibits the highest Tc of about 813 K. The tetragonal samples have appreciable values of magnetocrystalline anisotropy energy, which leads to an increase in coercivity (Hc that approaches about 10 kOe in the Pt-doped sample. The Hc linearly increases with a decrease of temperature, concomitant with the anisotropy change with temperature. All samples are metallic and show negative magnetoresistance with room-temperature resistivities on the order of 1 mΩcm. The magnetic properties including high Tc and low magnetic moment suggest that these tetragonal materials have potential for spin-transfer-torque-based devices.

  2. Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

    CERN Document Server

    Pearton, S J; Thaler, G; Abernathy, C R; Theodoropoulou, N; Hebard, A F; Chu, S N G; Wilson, R G; Zavada, J M; Polyakov, A Y; Osinsky, A V; Norris, P E; Chow, P P; Wowchack, A M; Hove, J M V; Park, Y D

    2002-01-01

    The magnetization of p-GaN or p-AlGaN/GaN superlattices was measured after implantation with high doses (3-5x10 sup 1 sup 6 cm sup - sup 2) of Mn, Fe, or Ni and subsequent annealing at 700-1000 deg. C. The samples showed ferromagnetic contributions below temperatures ranging from 190-250 K for Mn to 45-185 K for Ni and 80-250 K for Fe. The use of superlattices to enhance the hole concentration did not produce any change in ferromagnetic ordering temperature. No secondary phase formation was observed by x-ray diffraction, transmission electron microscopy, or selected area diffraction pattern analysis for the doses we employed.

  3. On the ternary Ag – CuGa system: Electromotive force measurement and thermodynamic modeling

    International Nuclear Information System (INIS)

    Gierlotka, Wojciech; Jendrzejczyk-Handzlik, Dominika; Fitzner, Krzysztof; Handzlik, Piotr

    2015-01-01

    The ternary silver–copper–gallium system found application as a solder material in jewel crafting and electronics, thus a phase diagram of this system seems to be important tool, which is necessary for a proper application of different alloys. The activity of gallium in liquid phase was determined by electromotive measurement technique and after that the equilibrium diagram of Ag – CuGa was modeled based on available experimental data using Calphad approach. A set of Gibbs energies was found and used for calculation a phase diagram and thermodynamic properties of liquid phase. The experimental data was reproduced well by calculation. - Highlights: • For the first time activity of Ga in liquid Ag – CuGa alloys was measured. • For the first time the ternary Ag – CuGa system was thermodynamically modeled. • Modeled Ag – CuGa system reproduces experimental data well

  4. Synthesis of Cu(In,Ga)Se{sub 2} crystals using a crank ball mill

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Suzuka; Noji, Hideki; Akaki, Yoji [Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo Miyazaki 885-8567 (Japan); Okamoto, Tomoichiro [Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)

    2015-06-15

    Cu(In,Ga)Se{sub 2} (CIGS) crystals were synthesized by a mechanochemical (MC) process using a crank ball mill. The molar ratios of starting materials were Cu:In:Ga:Se=1:1-x:x:2 (0≤x≤1) and Cu:In:Ga:Se=1:0.7:0.3:y (2≤y≤3). The reaction time reduced with decreasing Se and Ga molar ratios. The collection rate decreased with longer reaction times. From XRD patterns, we confirmed that the CuInSe{sub 2} and/or CuGaSe{sub 2}crystals were successfully grown when the powders reacted. Although the crystals grown with a selenium molar ration of 2 were Se-poor, those grown at a molar ratio of 3 were Se-rich. When Se increasing molar ratio, Cu, In, and Ga were away from the stoichiometric. With a molar ratio of Cu:In:Ga:Se=1:0.7:0.3:2.5∝2.7, their composition became stoichiometric. Crystal morphology was varied. CIGS crystals were thus successfully synthesized using a crank ball mill. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Understanding the crystallization mechanism of delafossite CuGaO2 for controlled hydrothermal synthesis of nanoparticles and nanoplates.

    Science.gov (United States)

    Yu, Mingzhe; Draskovic, Thomas I; Wu, Yiying

    2014-06-02

    The delafossite CuGaO2 is an important p-type transparent conducting oxide for both fundamental science and industrial applications. An emerging application is for p-type dye-sensitized solar cells. Obtaining delafossite CuGaO2 nanoparticles is challenging but desirable for efficient dye loading. In this work, the phase formation and crystal growth mechanism of delafossite CuGaO2 under low-temperature (mechanism to explain the formation of large CuGaO2 nanoplates. Importantly, by suppressing this OA process, delafossite CuGaO2 nanoparticles that are 20 nm in size were successfully synthesized for the first time. Moreover, considering the structural and chemical similarities between the Cu-based delafossite series compounds, the understanding of the hydrothermal chemistry and crystallization mechanism of CuGaO2 should also benefit syntheses of other similar delafossites such as CuAlO2 and CuScO2.

  6. Electrodeposition and Characterization of Mn-Cu-Zn Alloys for Corrosion Protection Coating

    Science.gov (United States)

    Tsurtsumia, Gigla; Gogoli, David; Koiava, Nana; Kakhniashvili, Izolda; Jokhadze, Nunu; Lezhava, Tinatin; Nioradze, Nikoloz; Tatishvili, Dimitri

    2017-12-01

    Mn-Cu-Zn alloys were electrodeposited from sulphate bath, containing citrate or EDTA and their mixtures as complexing ligands. The influence of bath composition and deposition parameters on alloys composition, cathodic current efficiency and structural and electrochemical properties were studied. At a higher current density (≥ 37.5 A dm-2) a uniform surface deposit of Mn-Cu-Zn was obtained. Optimal pH of electrolyte (0.3 mol/dm3Mn2+ + 0.6 mol/dm3 (NH4)2SO4 +0.1 mol/dm3Zn2++0.005 mol/dm3 Cu2++ 0.05mol/dm3Na3Cit + 0.15mol/dm3 EDTA; t=300C; τ=20 min) for silvery, nonporous coating of Mn-Cu-Zn alloy was within 6.5-7.5; coating composition: 71-83% Mn, 6-7.8% Cu, 11.5-20% Zn, current efficiency up to 40%. XRD patterns revealed BCT (body centred tetragonal) γ-Mn solid phase solution (lattice constants a=2.68 Å c=3.59 Å). Corrosion measurements of deposited alloys were performed in aerated 3.5% NaCl solution. The corrosion current density (icorr) of the electrodeposited alloys on carbon steel was 10 times lower than corrosion rate of pure zinc and manganese coatings. Triple alloy coatings corrosion potential (Ecorr = -1140 mV vs. Ag/AgCl) preserved negative potential value longer (more than three months) compared to carbon steel substrate (Ecorr = -670 mV vs. Ag/AgCl). Tafel polarization curves taken on Mn-Cu-Zn alloy coating in aerated 3.5% NaCl solution did not show a typical passivation behaviour which can be explained by formation oflow solubility of adherent corrosion products on the alloy surface. Corrosion test of Mn-Cu-Zn electrocoating in chlorine environment shows that it is the best cathodic protective coating for a steel product.

  7. Electron spin dynamics and optical orientation of Mn2+ ions in GaAs

    Science.gov (United States)

    Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

    2013-04-01

    We present an overview of spin-related phenomena in GaAs doped with low concentration of Mn-acceptors (below 1018 cm-3). We use the combination of different experimental techniques such as spin-flip Raman scattering and time-resolved photoluminescence. This allows to evaluate the time evolution of both electron and Mn spins. We show that optical orientation of Mn ions is possible under application of weak magnetic field, which is required to suppress the manganese spin relaxation. The optically oriented Mn2+ ions maintain the spin and return part of the polarization back to the electron spin system providing a long-lived electron spin memory. This leads to a bunch of spectacular effects such as non-exponential electron spin decay and spin precession in the effective exchange fields.

  8. A photoemission study of Mn grown on GaAs(100)

    International Nuclear Information System (INIS)

    James, D.; Riley, J.; Leckey, R.; Usher, B.; Sieber, N.; Seyller, Th.; Ley, L.

    2002-01-01

    Full text: Metal contacts on semiconductors have been an important area for device manufacture. The possibility of lattice matched growth of magnetic metals on semiconductors was once thought to be a unobtainable goal. More recently it has been found that transition metals can react with the semiconductor substrates, forming another lattice with a more comparable lattice constant, from which epitaxial growth can then proceed. Al grows epitaxially on GaN even with a lattice mismatch greater than 10%. In this instance, Al displaces Ga being driven by a larger heat of formation to produce an AlN buffer layer, on which Al can then grow. This paper investigates the room temperature deposition of Mn onto GaAs(100) at room temperature. The Photoemission study was carried out at the UEL56/2 PGM2 beam line at BESSY II in Berlin, Germany. Synchrotron radiation was used to observe the surface as thin layers of Mn were deposited. The interaction of manganese with the substrate tends to donate electron density to neighbouring atoms, decreasing binding energy. No further segregation of substitutional or interstitial Mn and Ga can be seen from angle dependence data at this temperature, with metallic manganese eventually attenuating the bulk Ga signal to the point where it is indistinguishable from the background. It is concluded that there the metal reacts with the semiconductor surface with some indiffusion as confirmed using SIMS. Previously, the reaction was only thought to have taken place above room temperature. The resulting structure consists of a Ga-As-Mn buffer layer as with the higher temperature depositions

  9. Tuning the magnetic interactions in GaAs:Mn/MnAs hybrid structures by controlling shape and position of MnAs nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Elm, Matthias Thomas

    2010-07-01

    In this work the magnetic properties of hexagonal MnAs nanoclusters and their influence on the transport properties of GaAs:Mn /MnAs hybrid structures were studied. Various arrangements of isolated nanoclusters and cluster chains were grown on (111)B-GaAs substrates by SA-MOVPE. The first part of this work deals with the manufacturing process of the different cluster arrangements investigated. By a suitable pre-structuring of the substrate it was possible to influence the cluster size, cluster shape and cluster position systematically. Preparing various arrangements it could be shown that the hexagonal nanoclusters prefer to grow along their a-axes. In the second part, the magnetic properties of the nanoclusters were studied. Ferromagnetic resonance (FMR) measurements show a hard magnetic axis perpendicular to the sample plane, i.e. parallel to the c-axis. By measurements, where the magnetic field was rotated in the sample plane, it could be demonstrated that the orientation of the magnetization can be forced into a certain direction by controlling the cluster shape. These results are confirmed by measurements using magnetic force microscopy. The third part deals with the influence of the nanoclusters and their arrangement on the transport properties of the GaAs:Mn matrix. For temperatures above 30 K the structures investigated show positive as well as negative magnetoresistance effects, which are typical for granular GaAs:Mn/MnAs hybrid structures. This behaviour can be explained in the context of transport in extended band states. The size of the magnetoresistance effects correlates strongly with the respective cluster arrangement of the sample. This behaviour has been predicted theoretically and could be confirmed experimentally in the context of this work. Below 30 K large positive magnetoresistance effects show up for the regular cluster arrangements, which cannot be observed for hybrid structures with random cluster distributions. These large positive

  10. Properties of different temperature annealed Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films prepared by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhou; Liu Lian; Yan Yong; Zhang Yanxia; Li Shasha; Yan Chuanpeng; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New Energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New Energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer The Cu(In,Ga)Se{sub 2} and Cu(In,Ga)2Se{sub 3.5} films follow different process to form CIGS phase. Black-Right-Pointing-Pointer Composition loss of the annealed Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films are different. Black-Right-Pointing-Pointer Hexagonal CuSe phase exhibits unique transport feature. Black-Right-Pointing-Pointer Conductivity of the CIGS films is affected by the 'variable range hopping' mechanism. - Abstract: We have investigated the effect of annealing temperature on structural, compositional, electrical properties of the one-step RF sputtered Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films. After the annealing at various temperatures, loss of Se element is significant for the Cu(In,Ga)Se{sub 2} films and meanwhile composition of the annealed Cu(In,Ga){sub 2}Se{sub 3.5} films keeps almost constant. The as-deposited Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films show amorphous structure and they follow different transformation process to form chalcopyrite structure. Electrical conductivity of the annealed CIGS films related to their chemical composition. Cu(In,Ga)Se{sub 2} films annealed at 150 Degree-Sign C show unique electron transport mechanism for the formation of hexagonal CuSe phase. Electrical conductivity of the chalcopyrite structure films are dominated by the 'variable range hopping' transport mechanism. The annealed Cu(In,Ga){sub 2}Se{sub 3.5} films present higher density of disorders than the annealed Cu(In,Ga)Se{sub 2} films for their significant Cu deficient composition.

  11. The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures

    International Nuclear Information System (INIS)

    Feng, Yu; Tian, Chun-lin; Yuan, Hong-kuan; Kuang, An-long; Chen, Hong

    2015-01-01

    We study the effect of disorder, including swap and antisite, on the electronic and magnetic properties of heterostructures by using extensive first-principles calculations within density functional theory. Thirteen kinds of swap disorders and sixteen kinds of antisite disorders are proposed and studied comprehensively. Our calculation reveals that disorders at the interface have low formation energies, indicating that disorders are most likely to appear at the interface instead of the deep layer. Among all kinds of disorders, Mn 1 (Al) (where the interface Mn is occupied by an Al atom) and Mn 1 (As) (where the interface Mn is occupied by an As atom from a GaAs slab) antisite disorders possess the lowest formation energies. This shows that the interface Mn has a higher probability of being replaced by an Al atom, and that an As atom from a GaAs slab easily diffuses into a Mn 2 CoAl slab and occupies the position of the interface Mn. Moreover, further study on the interface electronic structure reveals that interface spin polarization suffers dramatic reduction due to Mn 1 (Al) and Mn 1 (As) antisite disorders. It can be deduced that the interface state, together with Mn 1 (Al) and Mn 1 (As) antisite disorders, may be the main causes of the low TMR ratio of Mn 2 CoAl/GaAs heterostructures. (paper)

  12. Ab initio electronic structure calculations for Mn linear chains deposited on CuN/Cu(001) surfaces

    International Nuclear Information System (INIS)

    Barral, Maria Andrea; Weht, Ruben; Lozano, Gustavo; Maria Llois, Ana

    2007-01-01

    In a recent experiment, scanning tunneling microscopy has been used to obtain a direct probe of the magnetic interaction in linear manganese chains arranged by atomic manipulation on thin insulating copper nitride islands grown on Cu(001). The local spin excitation spectra of these chains have been measured with inelastic electron tunneling spectroscopy. Analyzing the spectroscopic results with a Heisenberg Hamiltonian the interatomic coupling strength within the chains has been obtained. It has been found that the coupling strength depends on the deposition sites of the Mn atoms on the islands. In this contribution, we perform ab initio calculations for different arrangements of infinite Mn chains on CuN in order to understand the influence of the environment on the value of the magnetic interactions

  13. Synthesis, structure, magnetic, electrical and electrochemical properties of Al, Cu and Mg doped MnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hashem, Ahmed M., E-mail: ahmedh242@yahoo.com [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Abuzeid, Hanaa M. [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Narayanan, N. [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Ehrenberg, Helmut [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, D-64287 Darmstadt (Germany); Julien, C.M. [Universite Pierre et Marie Curie, Physicochimie des Electrolytes, Colloides et Sciences Analytiques (PECSA), 4 place Jussieu, 75005 Paris (France)

    2011-10-17

    Highlights: {yields} Al, Mg and Cu doped MnO{sub 2} as cathode in Li-ion batteries. {yields} Pure phase MnO{sub 2} for virgin and doped MnO{sub 2} were obtained. {yields} Doping elements improve the electrical conductivity of MnO{sub 2}. {yields} Electrochemical behaviour of MnO{sub 2} improved after doping by Al, Mg and Cu. - Abstract: Pure and doped manganese dioxides were prepared by wet-chemical method using fumaric acid and potassium permanganate as raw materials. X-ray diffraction patterns show that pure and Al, Cu and Mg doped manganese dioxides (d-MnO{sub 2}) crystallized in the cryptomelane-MnO{sub 2} structure. Thermal analysis show that, with the assistance of potassium ions inside the 2 x 2 tunnel, the presence of Al, Cu and Mg doping elements increases the thermal stability of d-MnO{sub 2}. The electrical conductivity of d-MnO{sub 2} increases in comparison with pure MnO{sub 2}, while Al-doped MnO{sub 2} exhibits the lower resistivity. As shown in the magnetic measurements, the value of the experimental effective magnetic moment of Mn ions decreases with introduction of dopants, which is attributed to the presence of a mixed valency of high-spin state Mn{sup 4+}/Mn{sup 3+}. Doped MnO{sub 2} materials show good capacity retention in comparison with virgin MnO{sub 2}. Al-doped MnO{sub 2} shows the best electrochemical results in terms of capacity retention and recharge efficiency.

  14. Defect luminescence and lattice strain in Mn{sup 2+} doped ZnGa{sub 2}O{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Somasundaram, K.; Abhilash, K.P. [Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi, 642001 Coimbatore (India); Sudarsan, V., E-mail: vsudar@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Christopher Selvin, P., E-mail: pcsphyngmc@rediffmail.com [Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi, 642001 Coimbatore (India); Kadam, R.M. [Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2016-06-15

    Undoped and Mn{sup 2+} doped ZnGa{sub 2}O{sub 4} phosphors were prepared by solution combustion method and characterized by XRD, SEM, luminescence and electron paramagnetic resonance (EPR) techniques. Based on XRD results, it is inferred that, strain in ZnGa{sub 2}O{sub 4} host lattice increases with incorporation of Mn{sup 2+} ions in the lattice. Mn{sup 2+} doping at concentration levels investigated, lead to significant reduction in the defect emission and this has been attributed to the formation of higher oxidation states of Mn ions in the lattice. Electron Paramagnetic Resonance studies confirmed that majority of Mn ions exist as Mn{sup 2+} species and they occupy tetrahedral Zn{sup 2+} site in ZnGa{sub 2}O{sub 4} lattice with an average hyperfine coupling constant, A{sub iso}∼82 G.

  15. Controllable Growth of Ga Film Electrodeposited from Aqueous Solution and Cu(In,Ga)Se2 Solar Cells.

    Science.gov (United States)

    Bi, Jinlian; Ao, Jianping; Gao, Qing; Zhang, Zhaojing; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

    2017-06-07

    Electrodepositon of Ga film is very challenging due to the high standard reduction potential (-0.53 V vs SHE for Ga 3+ ). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl 3 aqueous solution. A high deposition rate of Ga 3+ and H + can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm 2 , pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and V oc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.

  16. Effects on Magnetic Properties of GaMnAs Induced by Proximity of Topological Insulator Bi2Se3

    Science.gov (United States)

    Bac, Seul-Ki; Lee, Hakjoon; Lee, Sangyeop; Choi, Seonghoon; Lee, Sanghoon; Liu, X.; Dobrowolska, M.; Furdyna, J. K.

    2018-04-01

    Effects induced by a topological insulator Bi2Se3 on the magnetic properties of an adjacent GaMnAs film have been investigated using transport measurements. We observed three conspicuous effects in the GaMnAs layer induced by the proximity of the Bi2Se3 overlayer. First, our resistivity data as a function of temperature show that the GaMnAs layer adjacent to the Bi2Se3 displayed strongly metallic behavior, as compared with the GaMnAs control specimen. Second, the Curie temperature of the GaMnAs in the bilayer was observed to be higher than that of the control layer, in our case by nearly a factor of two. Finally, we observed significant changes in the in-plane magnetic anisotropy of the GaMnAs in the bilayer, in the form of much higher values of both cubic and uniaxial anisotropy parameters. This latter feature manifests itself in a rather spectacular increase of the coercive field observed in magnetization reversal across the in-plane hard axis. These results suggest that proximity of an adjacent Bi2Se3 layer represents an important tool for modifying and controlling the ferromagnetic properties of GaMnAs film, and could thus be used to optimize this and similar materials for applications in spintronic devices.

  17. Scaling relation of the anomalous Hall effect in (Ga,Mn)As

    Science.gov (United States)

    Glunk, M.; Daeubler, J.; Schoch, W.; Sauer, R.; Limmer, W.

    2009-09-01

    We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-conductivity to the high-conductivity regime. The anomalous Hall conductivity σxy(AH) is extracted from the measured longitudinal and Hall resistivities. A transition from σxy(AH)=20Ω-1cm-1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σxy(AH)∝σxx1.6 for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

  18. Levels Of Mn, Fe, Ni, Cu, Zn And Cd, In Effluent From A Sewage ...

    African Journals Online (AJOL)

    This study reports the results of preliminary investigation of heavy metal levels-Ni, Cd, Fe, Zn, Cu and Mn; pH; temperature and electrical conductivity in effluents from a sewage treatment oxidation pond and its receiving stream. The heavy metal concentrations were determined with Inductively Coupled Plasma-Mass ...

  19. The geochemical profile of Mn, Co, Cu and Fe in Kerteh Mangrove Forest, Terengganu

    International Nuclear Information System (INIS)

    Kamaruzzaman, B.Y.; Antotina, A.; Airiza, Z.; Syalindran, S.; Ong, M.C.

    2007-01-01

    The geochemical profile of Kerteh mangrove sediments was analyzed for the vertical and horizontal distribution. The 100 cm core sediment sample and 15 surface sediments samples were taken from the field. The geochemical elements of Mn, Co, Cu and Fe of the sediments were analyzed. Geochemical proxy of Mn, Co, Cu and Fe were analyzed by using Inductively Coupled Plasma-Mass Spectrometry (ICP-MS). The mean concentrations of Mn, Co, Cu and Fe for the vertical distribution were 210.18 μg/ g, 15.55 μg/ g, 43.65 μg/ g and 1.88 μg/ g respectively. on the other hand, the mean concentrations of the geochemical elements for horizontal distributions were 230.50 μg/ g for Mn, 17.57 μg/ g for Co, 43.381 μg/ g for Cu and 2.93 μg/ g for Fe. Enrichment factor and normalization was used to point out the level of pollution. The EF and the normalization indicated that all the geochemical elements were from the natural sources. (author)

  20. Thermoelastic martensite and shape memory effect in ductile Cu-Al-Mn alloys

    Science.gov (United States)

    Kainuma, R.; Takahashi, S.; Ishida, K.

    1996-08-01

    Ductile shape memory (SM) alloys of the Cu-AI-Mn system have been developed by controlling the degree of order in the β phase. Additions of Mn to the binary Cu-Al alloy stabilize the β phase and widen the single-phase region to lower temperature and lower Al contents. It is shown that Cu-Al-Mn alloys with low Al contents have either the disordered A2 structure or the ordered L21 structure with a lower degree of order and that they exhibit excellent ductility. The disordered A2 phase martensitically transforms to the disordered Al phase with a high density of twins. The martensite phase formed from the ordered L21 phase has the 18R structure. The SM effect accompanies both the A2 → Al and L21 → 18R martensitic transformations. These alloys exhibit 15 pct strain to failure, 60 to 90 pct rolling reduction without cracking, and 80 to 90 pct recovery from bend test in the martensitic condition. Experimental results on the microstructure, crystal structure, mechanical properties, and shape memory behavior in the ductile Cu-AI-Mn alloys are presented and discussed.

  1. Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

    Science.gov (United States)

    Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

  2. Synthesis of hard magnetic Mn3Ga micro-islands by e-beam evaporation

    Directory of Open Access Journals (Sweden)

    O. Akdogan

    2018-05-01

    Full Text Available The permanent magnet industry heavily depends on Nd-Fe-B and Sm-Co alloys because of their high-energy product and high room temperature coercivity. Main ingredient for having such superior magnetic properties compared to other known ferromagnetic materials is rare earth elements (Nd, Sm, Dy…. However recent worldwide reserve and export limitation problem of rare earths, shifted researchers’ focus to rare earth free permanent magnets. Among many alternatives (FePt, Zr2Co11, FeNi …, Mn-based alloys are the most suitable due to abundance of the forming elements and trivial formation of the necessary hard phases. In this study, Mn3Ga micro islands have been prepared. Mn3Ga owes its hard magnetic properties to tetragonal D022 phase with magnetic anisotropy energy of 2 MJ/m3. Thin films and islands of Cr/MnGa/Cr layers have been deposited on Si/SiO2 wafers using combination of e-beam and thermal evaporation techniques. Cr has been used as buffer and cover layer to protect the sample from the substrate and prevent oxidation during annealing. Annealing under Ar/H2 forming gas has been performed at 350oC for 10 min. Nano thick islands of 25, 50 and 100 μm lateral size have been produced by photolithography technique. Room temperature coercivity of 7.5 kOe has been achieved on 100 μm micro islands of Mn3Ga. Produced micro islands could be a rare earth free alternative for magnetic memory and MEMS applications.

  3. Synthesis of hard magnetic Mn3Ga micro-islands by e-beam evaporation

    Science.gov (United States)

    Akdogan, O.

    2018-05-01

    The permanent magnet industry heavily depends on Nd-Fe-B and Sm-Co alloys because of their high-energy product and high room temperature coercivity. Main ingredient for having such superior magnetic properties compared to other known ferromagnetic materials is rare earth elements (Nd, Sm, Dy…). However recent worldwide reserve and export limitation problem of rare earths, shifted researchers' focus to rare earth free permanent magnets. Among many alternatives (FePt, Zr2Co11, FeNi …), Mn-based alloys are the most suitable due to abundance of the forming elements and trivial formation of the necessary hard phases. In this study, Mn3Ga micro islands have been prepared. Mn3Ga owes its hard magnetic properties to tetragonal D022 phase with magnetic anisotropy energy of 2 MJ/m3. Thin films and islands of Cr/MnGa/Cr layers have been deposited on Si/SiO2 wafers using combination of e-beam and thermal evaporation techniques. Cr has been used as buffer and cover layer to protect the sample from the substrate and prevent oxidation during annealing. Annealing under Ar/H2 forming gas has been performed at 350oC for 10 min. Nano thick islands of 25, 50 and 100 μm lateral size have been produced by photolithography technique. Room temperature coercivity of 7.5 kOe has been achieved on 100 μm micro islands of Mn3Ga. Produced micro islands could be a rare earth free alternative for magnetic memory and MEMS applications.

  4. Optical orientation of Mn{sup 2+} ions in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Langer, Lukas; Bayer, Manfred [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Akimov, Ilya A.; Yakovlev, Dmitri R. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Dzhioev, Roslan I.; Korenev, Vladimir L.; Kusrayev, Yuri G.; Sapega, Victor F. [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2011-07-01

    We report on optical orientation of Mn{sup 2+} ions in bulk GaAs under application of weak longitudinal magnetic fields (B {<=}150 mT). The studied samples were grown by liquid phase epitaxy and Czochralski method and were doped with a low Mn acceptor concentration of 8 x 10{sup 18} cm{sup -3}. Time resolved measurements of circular polarization for donor-acceptor photoluminescence in Faraday geometry reveal nontrivial spin dynamics of donor localized electrons. Initially the degree of polarization of the electron spins is 40%. It then decays within some tens of ns to reach a plateau. The plateau is absent at B=0 T and saturates at B=150 mT reaching the value of 35%. It's sign changes with the helicity of incident light. It follows that the s-d exchange interaction with optically oriented electrons induces a steady state non-equilibrium polarization of the Mn{sup 2+} ions. The latter maintain their spin and return part of the polarization back to the electron spin system, resulting in the plateau. This provides a long-lived electron spin memory in GaAs doped with Mn. The dynamical polarization of ionized Mn acceptors was also directly monitored using spin flip Raman scattering spectroscopy, in agreement with time-resolved data.

  5. Microstructure and corrosion resistance of Sm-containing Al-Mn-Si-Fe-Cu alloy

    Directory of Open Access Journals (Sweden)

    Han Yuyin

    2017-12-01

    Full Text Available Optimizing alloy composition is an effective way to improve physical and chemical properties of automobile heat exchanger materials.A Sm-containing Al-Mn-Si-Fe-Cu alloy was investigated through transmission electron microscopy,scanning electron microscopy,and electrochemical measurement.Experimental results indicated that main phases distributed in the alloy wereα-Al(Mn,FeSi,Al2Sm and Al10Cu7Sm2.Alloying with Sm element could refine the precipitated α-Al(Mn,FeSi phase.Polarization testing results indicated that the corrosion surfacewas mainly composed of pitting pits and corrosion products.Sea water acetic acid test(SWAAT showed that corrosion loss increased first and then slowed downwith increase of the corrosion time.

  6. Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2009-08-01

    Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

  7. Low temperature formation of CuIn{sub 1−x}Ga{sub x}Se{sub 2} solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors

    Energy Technology Data Exchange (ETDEWEB)

    Möckel, Stefan A., E-mail: Stefan.A.Moeckel@FAU.de [Department of Materials Science, Chair of Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr, 7, 91058 Erlangen (Germany); Wernicke, Tobias; Arzig, Matthias; Köder, Philipp [Department of Materials Science, Chair of Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr, 7, 91058 Erlangen (Germany); Brandl, Marco [Chair for Crystallography and Structural Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 3, 91058 Erlangen (Germany); Ahmad, Rameez; Distaso, Monica; Peukert, Wolfgang [Institute of Particle Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Cauerstr. 4, 91058 Erlangen (Germany); Hock, Rainer [Chair for Crystallography and Structural Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstr. 3, 91058 Erlangen (Germany); Wellmann, Peter J. [Department of Materials Science, Chair of Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr, 7, 91058 Erlangen (Germany)

    2015-05-01

    In this work an all nanoparticulate precursor for application in Cu(In{sub 1−x}Ga{sub x})Se{sub 2} solar cell absorbers is presented. Binary Cu-In nanoparticles, Cu-Ga powder and elemental Se nanoparticles were mixed in dispersion and deposited on Mo-coated substrates. Research was focused on Cu(In{sub 1−x}Ga{sub x})Se{sub 2} layer formation kinetics, phase composition characterised by differential scanning calorimetry and in-situ X-ray diffraction (XRD). Furthermore phase composition and morphology were studied by ex-situ XRD, Raman spectroscopy and scanning electron microscopy. The results revealed a fast consumption of the precursor and the formation of CuInSe{sub 2} below 340 °C. Binary secondary phases were not observed at any temperature. - Highlights: • All printable precursor for CIGSe • Formation of Ga droplets • Complete consumption below 340 °C.

  8. Effect of disorder on the magnetic properties of cubic Mn2RuxGa compounds: A first-principles study

    International Nuclear Information System (INIS)

    Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.; Blügel, S.

    2014-01-01

    We perform first-principles electronic structure calculations to explain the anomalous magnetic behavior of the Mn 2 Ru x Ga compounds upon Ru doping as shown experimentally recently by Kurt et al. [Phys. Rev. Lett. 112, 027201 (2014)]. Our results suggest that disorder caused by the distribution of the Mn and Ru atoms at various sites reproduces the experimental data. All compounds present antiparallel alignment of the neighboring Mn magnetic moments and, with the exception of Mn 2 RuGa, none of them presents half metallic behavior.

  9. Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Horodyská, P.; Tesařová, N.; Němec, P.; Šubrt, J.; Malý, P.; Kužel, Petr; Kadlec, Christelle; Mašek, Jan; Němec, I.; Orlita, Milan; Novák, Vít; Olejník, Kamil; Šobáň, Zbyněk; Vašek, Petr; Svoboda, Pavel; Sinova, Jairo

    2010-01-01

    Roč. 105, č. 22 (2010), 227201/1-227201/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  10. Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment

    Czech Academy of Sciences Publication Activity Database

    Zemen, Jan; Kučera, Jan; Olejník, Kamil; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 15 (2009), 155203/1-155203/29 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801; NAMASTE(XE) FP-7214499 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute magnetic semiconductor * magnetic anisotropy * Ga,Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://arxiv.org/abs/0904.0993

  11. One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

    Science.gov (United States)

    Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

    2005-03-01

    Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

  12. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  13. Effect of MnCuFe{sub 2}O{sub 4} content on magnetic and dielectric properties of poly (O-Phenylenediamine)/MnCuFe{sub 2}O{sub 4} nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Kannapiran, Nagarajan [PG and Research Department of Chemistry, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu (India); Muthusamy, Athianna, E-mail: muthusrkv@gmail.com [PG and Research Department of Chemistry, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu (India); Chitra, Palanisamy [PG and Research Department of Chemistry, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil Nadu (India)

    2016-03-01

    Poly o-phenylenediamine (PoPD)/MnCuFe{sub 2}O{sub 4} nanocomposites with three different ratios of MnCuFe{sub 2}O{sub 4} (10%, 20%, 30% w/w) were synthesized by in-situ oxidative chemical polymerization method ammonium persulphate used as oxidant, while MnCuFe{sub 2}O{sub 4} nanoparticles was prepared by auto-combustion method. The structure, morphology and magnetic properties of synthesized PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites were characterized by FT-IR, UV–visible absorption spectra, X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Thermogravimetric analysis (TGA) and Vibrating sample magnetometer (VSM). FTIR spectra and XRD were confirmed the formation of the PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites. The morphology of PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites is visualized through SEM and TEM. The spherical morphology of the PoPD was confirmed using SEM analysis. Dielectric properties of PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites at different temperatures have been performed in the frequency range of 50 Hz–5 MHz. The optical absorption experiments of PoPD/MnCuFe{sub 2}O{sub 4} nanocomposites reveal that the direct transition with an energy band gap is around 2 eV. - Highlights: • Green synthesis of PoPD (the polymerization carried out only in aqueous medium) by in-situ chemical polymerization method. • For the first time, PoPD incorporated with MnCuFe{sub 2}O{sub 4} with lesser particle size. • The auto combustion reaction, support to achieve less particle size. • Ferrite content affects the magnetic properties of the nanocomposites.

  14. Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

    Science.gov (United States)

    Yuan, Ye; Xu, Chi; Hübner, René; Jakiela, Rafal; Böttger, Roman; Helm, Manfred; Sawicki, Maciej; Dietl, Tomasz; Zhou, Shengqiang

    2017-10-01

    Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): G a1 -xM nxAs and I n1 -xM nxAs . In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in I n1 -xM nxAs compared to G a1 -xM nxAs with the same Mn concentration x . This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism. Furthermore, the findings support strongly the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the metal-insulator transition.

  15. Investigation of thermal, mechanical and magnetic behaviors of the Cu-11%Al alloy with Ag and Mn additions

    International Nuclear Information System (INIS)

    Silva, R.A.G.; Paganotti, A.; Gama, S.; Adorno, A.T.; Carvalho, T.M.; Santos, C.M.A.

    2013-01-01

    The investigation of thermal, mechanical and magnetic behaviors of the Cu-11%Al, Cu-11%Al-3%Ag, Cu-11%Al-10%Mn and Cu-11%Al-10%Mn-3%Ag alloys was made using microhardness measurements, differential scanning calorimetry, X-ray diffractometry, scanning electron microscopy, energy dispersion X-ray spectroscopy and magnetic moment change with applied field measurement. The results indicated that the Mn addition changes the phase stability range, the microhardness values and makes undetectable the eutectoid reaction in annealed Cu-11%Al and Cu-11%Al-3%Ag alloys while the presence of Ag does not modify the phase transformation sequence neither microhardness values of the annealed Cu-11%Al and Cu-11%Al-10%Mn alloys, but it increases the magnetic moment of this latter at about 2.7 times and decreases the rates of eutectoid and peritectoid reactions of the former. - Highlights: ► The microstructure of Cu-Al alloy is modified in the Ag presence. ► (α + γ) phase is stabilized down to room temperature when Ag is added to Cu-Al alloy. ► Ag-rich phase modifies the magnetic characteristics of Cu–Al–Mn alloy.

  16. Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

    Science.gov (United States)

    Sharma, Venus; Srivastava, Sunita

    2018-04-01

    Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

  17. Effect of P-anion codoping on the Curie temperature of GaMnAs diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, R.; Máca, František; Kudrnovský, Josef; Bergqvist, L.

    2010-01-01

    Roč. 82, č. 3 (2010), 035207/1-035207/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/09/0775; GA ČR(CZ) GC202/07/J047 Institutional research plan: CEZ:AV0Z10100520 Keywords : GaMnAs * calculations * Curie temperature * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

  18. Superparamagnetism in CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grima-Gallardo, P.; Alvarado, F.; Munoz, M.; Duran, S.; Quintero, M.; Nieves, L.; Quintero, E.; Tovar, R.; Morocoima, M. [Centro de Estudios en Semiconductores (CES), Fac. Ciencias, Dpto. Fisica, Universidad de Los Andes, Merida (Venezuela); Ramos, M.A. [Laboratorio de Difraccion y Fluorescencia de Rayos-X, Instituto Zuliano de Investigaciones Tecnologicas (INZIT), La Canada de Urdaneta, Estado Zulia (Venezuela)

    2012-06-15

    The temperature dependencies of DC magnetic susceptibilities, {chi}(T), of CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys were measured in a SQUID apparatus using the protocol of field cooling (FC) and zero FC (ZFC). The FC curves of both samples reflect a weak ferromagnetic (or ferrimagnetic) behavior with a nearly constant value of {chi}(T) in the measured temperature range (2-300 K) indicating that the critical temperatures (T{sub c}) are >300 K. The ZFC curves diverges from FC, showing irreversibility temperatures (T{sub irr}) of {proportional_to}250 K for CuFeInTe{sub 3} and >300 K for CuFeGaTe{sub 3}, suggesting that we are dealing with cluster-glass systems in a superparamagnetic state. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

    Directory of Open Access Journals (Sweden)

    Pereira M. J.

    2014-07-01

    Full Text Available Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC. Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

  20. Influence of martensitic transformation on the magnetic transition in Ni-Mn-Ga

    Energy Technology Data Exchange (ETDEWEB)

    Kokorin, V.V. [Institute of Magnetism of NASU and MESU, Vernadsky blvd., 03680 Kyiv (Ukraine); Konoplyuk, S.M., E-mail: ksm@imag.kiev.ua [Institute of Magnetism of NASU and MESU, Vernadsky blvd., 03680 Kyiv (Ukraine); Dalinger, A.; Maier, H.J. [Institut für Werkstoffkunde (Materials Science), Leibnitz Universität Hannover, An der Universität 2, D-30823 Garbsen (Germany)

    2017-06-15

    Highlights: • The magnetic transition with temperature hysteresis occurs in Ni{sub 51.9}Mn{sub 27}Ga{sub 211}. • Its second-order character is confirmed by magnetic measurements. • The reason for this phenomenon lies in temperature dependence of lattice constant. - Abstract: The magnetic transition with a temperature hysteresis of about 7 K was observed in the martensitic phase of Ni{sub 51.9}Mn{sub 27}Ga{sub 211}. The measurements of AC magnetic susceptibility in constant magnetic fields up to 570 kA/m have proved its magnetic origin. The transport and caloric measurements were used to gain better understanding of the nature of this phenomenon. The variation of the martensite lattice parameters with temperature is suggested to account for the hysteresis of the magnetic transition.

  1. L10-MnGa based magnetic tunnel junction for high magnetic field sensor

    Science.gov (United States)

    Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

    2017-07-01

    We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

  2. Intrinsic transmission magnetic circular dichroism spectra of GaMnAs

    Science.gov (United States)

    Terada, Hiroshi; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    Transmission magnetic circular dichroism (MCD) spectroscopy has been widely used to reveal the spin-dependent band structure of ferromagnetic semiconductors. In these previous studies, some band pictures have been proposed from the spectral shapes observed in transmission MCD; however, extrinsic signals originating from optical interference have not been appropriately considered. In this study, we calculate the MCD spectra taking into account the optical interference of the layered structure of samples and show that the spectral shape of MCD is strongly influenced by optical interference. To correctly understand the transmission MCD, we also calculate the intrinsic MCD spectra of GaMnAs that are not influenced by the optical interference. The spectral shape of the intrinsic MCD can be explained by the characteristic band structure of GaMnAs, that is, the spin-polarized valence band and the impurity band existing above the valence band top.

  3. Efficiency of Energy Harvesting in Ni-Mn-Ga Shape Memory Alloys

    Science.gov (United States)

    Lindquist, Paul; Hobza, Tony; Patrick, Charles; Müllner, Peter

    2018-03-01

    Many researchers have reported on the voltage and power generated while energy harvesting using Ni-Mn-Ga shape memory alloys; few researchers report on the power conversion efficiency of energy harvesting. We measured the magneto-mechanical behavior and energy harvesting of Ni-Mn-Ga shape memory alloys to quantify the efficiency of energy harvesting using the inverse magneto-plastic effect. At low frequencies, less than 150 Hz, the power conversion efficiency is less than 0.1%. Power conversion efficiency increases with (i) increasing actuation frequency, (ii) increasing actuation stroke, and (iii) decreasing twinning stress. Extrapolating the results of low-frequency experiments to the kHz actuation regime yields a power conversion factor of about 20% for 3 kHz actuation frequency, 7% actuation strain, and 0.05 MPa twinning stress.

  4. Stress-temperature phase diagram of a ferromagnetic Ni-Mn-Ga shape memory alloy

    International Nuclear Information System (INIS)

    Chernenko, V.A.; Pons, J.; Cesari, E.; Ishikawa, K.

    2005-01-01

    A sequence of thermally and stress-induced intermartensitic transformations has been found in a Ni 52.0 Mn 24.4 Ga 23.6 single crystal, which have been confirmed by transmission electron microscopy through in situ cooling experiments. The stress-strain-temperature behavior under compression along the P and P crystallographic directions has also been studied for this compound and a stress-temperature phase diagram has been established

  5. Magnetic and magnetoelastic properties of M-substituted cobalt ferrites (M=Mn, Cr, Ga, Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Song, Sang-Hoon [Iowa State Univ., Ames, IA (United States)

    2007-12-15

    Magnetic and magnetoelastic properties of a series of M-substituted cobalt ferrites, CoMxFe2-xO4 (M=Mn, Cr, Ga; x=0.0 to 0.8) and Ge-substituted cobalt ferrites Co1+xGexFe2-2xO4 (x=0.0 to 0.6) have been investigated.

  6. Autonomous generator based on Ni-Mn-Ga microactuator as a frequency selective element

    Directory of Open Access Journals (Sweden)

    Barandiaran J.M.

    2013-01-01

    Full Text Available In this work, we suggest the temperature-induced resistivity change at the martensitic transformation in the Ni-Mn-Ga ferromagnetic shape memory alloy as a driving mechanism enabling periodic signal generation. We demonstrated its practical importance by a design of the prototype of a low-frequency autonomous generator. A prominent feature of this new generator is a control of its frequency by the external magnetic field.

  7. Phase transformation, magnetic property and microstructure of Ni-Mn-Fe-Co-Ga ferromagnetic shape memory alloys

    International Nuclear Information System (INIS)

    Tsuchiya, K.; Sho, Y.; Kushima, T.; Todaka, Y.; Umemoto, M.

    2007-01-01

    Effects of addition of Fe and Co on the phase stability, magnetic property and microstructures were investigated for Ni-Mn-Ga. In Ni-Mn 21- x -Fe x -Ga 27 alloys, martensitic transformation temperatures decreased with increasing amount of Fe (x) up to 15 mol%, then slightly increased by the further addition. The crystal structure of martensite phase was 10 M for x 15 mol%. Relatively high martensite stability was obtained for Ni 52 -Mn 16- x -Fe x -Co 5 -Ga 27 alloys. The highest stability of the ferromagnetic martensite phase was achieved in Ni 52 -Mn 6 -Fe 10 -Co 5 -Ga 27 after aging at 773 K for 3.6 ks. Martensite structure was non-modulated 2 M in this series of alloys

  8. Twin relationships of 5M modulated martensite in Ni-Mn-Ga alloy

    International Nuclear Information System (INIS)

    Li Zongbin; Zhang Yudong; Esling, Claude; Zhao Xiang; Zuo Liang

    2011-01-01

    Highlights: → We determine orientation relationships of 5M modulated martensite in NiMnGa alloy. → Accurate EBSD mapping is performed using monoclinic superstructure. → Four distinct variants mutually twin-related to each other are revealed. → Three twinning types and full twinning elements are identified. → Twin interfaces do coincide with respective twinning planes. - Abstract: For Ni-Mn-Ga ferromagnetic shape memory alloys, the characteristic features of modulated martensite (including the number/shape of constituent variants, the inter-variant orientation relationship and the geometrical distribution of variant interfaces) determine the attainability of the shape memory effect. In the present work, a comprehensive microstructural and crystallographic investigation has been conducted on a bulk polycrystalline Ni 50 Mn 28 Ga 22 alloy. As a first attempt, the orientation measurements by electron backscatter diffraction (EBSD) - using the precise information on the commensurate 5M modulated monoclinic superstructure (instead of the conventionally simplified non-modulated tetragonal structure) - were successfully performed to identify the crystallographic orientations on an individual basis. Consequently, the morphology of modulated martensite, the orientation relationships between adjacent variants and the characters of twin interfaces were unambiguously determined. With the thus-obtained full-featured image on the configuration of martensitic variants, the possibility of microstructural modification by proper mechanical 'training' was further discussed. This new effort makes it feasible to explore the crystallographic/microstructural correlations in modulated martensite with high statistical reliability, which in turn provides useful guidance for optimizing the microstructure and shape memory performance.

  9. Fundamental optical absorption edge in MnGa2Te4 single crystals

    International Nuclear Information System (INIS)

    Medvedkin, G.A.; Rud, Yu.V.; Tairov, M.A.

    1988-01-01

    A study is made of the optical properties of oriented MnGa 2 Te 4 crystals in the region of the fundamental absorption edge. The energy gap width for the temperatures 77, 300, and 370 K is determined to be E G = 1.635, 1.52, and 1.50 eV. The spectral response α(ℎω/2π) is found to follow Urbach's rule thoughout the temperature range studied, the slope of the absorption edge remaining constant (α = 10 2 cm -1 ). Crystal annealing with subsequent rapid cooling results in a shift of the absorption edge longward by 25 meV with the exponential form of α(ℎω/2π) prevailing over the range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be a sum of the effects coming from the density-of-states tails, local scattering centers associated with a high vacancy concentration, and electron-phonon interaction. Optical linear dichroism of the absorption edge of MnGa 2 Te 4 single crystals with pseudotetragonal structure is revealed and studied. The single crystals are established to be optically uniaxial, their optical transmission dichroism being negative. It is shown that the minimal direct optical transitions in MnGa 2 Te 4 are allowed in the E parallel c polarization in the temperature range 77 to 370 K, the crystal-field splitting of the valence band increasing with temperature. (author)

  10. Electronic structures and relevant physical properties of Ni2MnGa alloy films

    International Nuclear Information System (INIS)

    Kim, K. W.; Kim, J. B.; Huang, M. D.; Lee, N. N.; Lee, Y. P.; Kudryavtsev, Y. V.; Rhee, J. Y.

    2004-01-01

    The electronic structures and physical properties of the ordered and disordered Ni 2 MnGa alloy films were investigated in this study. Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K. It was also revealed that the film deposition onto substrates cooled by liquid nitrogen leads to the formation of a substantially-disordered or an amorphous phase which is not ferromagnetically ordered at room temperature. An annealing of such an amorphous film restores its crystallinity and also recovers the ferromagnetic order. It was also clarified how the structural disordering in the films influences the physical properties, including the loss of ferromagnetism in the disordered films, by performing electronic-structure calculations and a photoemission study.

  11. Gd3+-ESR and magnetic susceptibility of GdCu4Al8 and GdMn4Al8

    International Nuclear Information System (INIS)

    Coldea, R.; Coldea, M.; Pop, I.

    1994-01-01

    Gd ESR of GdCu 4 Al 8 and GdMn 4 Al 8 and magnetic susceptibility of GdCu 4 Al 8 , GdMn 4 Al 8 , and YMn 4 Al 8 were measured in the temperature range of 290K--460K and 90K--1050K, respectively. The occurrence of the Mn moment in YMn 4 Al 8 and GdMn 4 Al 8 is strongly correlated with the critical value of d∼2.6 angstrom of the Mn-Mn distance below which the Mn moment is not stable. The experimental data for GdMn 4 Al 8 , compared with the data for the isostructural compounds GdCu 4 Al 8 and YMn 4 Al 8 , show that near the critical value of d, the existence of Mn moment depends not only on the value of d, but also on the local magnetic surroundings. It has been revealed that the magnetic character of Mn moment in YMn 4 Al 8 and GdMn 4 Al 8 changes from an itinerant electron type to a local-moment type with increasing temperature

  12. Combined effect of structural softening and magneto-elastic coupling on elastic coefficients of Ni-Mn-Ga austenite

    Czech Academy of Sciences Publication Activity Database

    Seiner, Hanuš; Heczko, Oleg; Sedlák, Petr; Bodnárová, Lucie; Novotný, Michal; Kopeček, Jaromír; Landa, Michal

    2013-01-01

    Roč. 577, November 2013 (2013), S131-S135 ISSN 0925-8388 R&D Projects: GA ČR GAP107/10/0824; GA ČR(CZ) GA101/09/0702; GA ČR(CZ) GAP107/11/0391; GA MŠk(CZ) 1M06031 Institutional research plan: CEZ:AV0Z20760514; CEZ:AV0Z10100520 Keywords : Ni2MnGa * elastic constants of Ni-Mn-Ga austenite * magnetic shape memory effect * martensitic transformation * elastic softening Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 2.726, year: 2013 http://www.sciencedirect.com/science/article/pii/S0925838812000539

  13. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Biber, M

    2003-01-01

    The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

  14. Magnetic anisotropy and anisotropic magnetoresistance of (Ga,Mn)As Layers on (113)A GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Donhauser, Daniela; Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Rapp, Christoph; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2009-07-01

    We study the magnetic anisotropy and the anisotropic magnetoresistance of compressively strained (Ga,Mn)As films with various Mn concentrations, grown on (113)A-oriented GaAs substrates. High-resolution x-ray diffraction (HRXRD) studies reveal a monoclinic symmetry of the distorted (113)A layers in agreement with an explicit calculation of the strain tensor. Based on this result, general expressions for the resistivity tensor and the free energy of single-crystalline ferromagnets are derived from a series expansion with respect to the magnetization orientation, including terms up to the fourth order. With these expressions we are able to model the measured angular dependences of our magnetotransport data with the assumption of a single ferromagnetic domain model. In order to quantitatively derive the resistivity and anisotropy parameters the longitudinal and transverse resistivities are experimentally studied for magnetic fields rotated within the (113), (33 anti 2), and (anti 110) plane at various field strengths. It turned out that some of the resistivity parameters significantly depend on the strength of the external magnetic field. Furthermore we found that the layers exhibit a uniaxial anisotropy along the [001] crystallographic axis, which can be theoretically explained based on the explicit form of the strain tensor.

  15. Cu deficiency in multi-stage co-evaporated Cu(In,Ga)Se{sub 2} for solar cells applications: Microstructure and Ga in-depth alloying

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R., E-mail: raquel.caballero@helmholtz-berlin.de [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Izquierdo-Roca, V. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain); Fontane, X. [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Kaufmann, C.A. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Alvarez-Garcia, J. [Centre de Recerca i Investigacio de Catalunya (CRIC), Trav. de Gracia 108, 08012 Barcelona (Spain); Eicke, A. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung, Industriestrasse 6, 70565 Stuttgart (Germany); Calvo-Barrio, L. [Lab. Analisis de Superficies, SCT, Universitat de Barcelona, Lluis Sole i Sabaris 1-3, 08028 Barcelona (Spain); Perez-Rodriguez, A. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Schock, H.W. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Morante, J.R. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain)

    2010-05-15

    The objective of this work is to study the influence of the maximum Cu content during the deposition of Cu(In,Ga)Se{sub 2} (CIGSe) by multi-stage co-evaporation on the phases present in the final film, the film structure and the electrical properties of resulting solar cell devices. The variation of the composition is controlled by the Cu content in stage 2 of the deposition process. The different phases are identified by Raman spectroscopy. The in-depth Ga gradient distribution is investigated by in-depth resolved Raman scattering and secondary neutral mass spectroscopy. The morphology of the devices is studied by scanning electron microscopy. Efficiencies of 9.2% are obtained for ordered-vacancy-compound-based cells with a Cu/(In + Ga) ratio = 0.35, showing the system's flexibility. This work supports the current growth model: a small amount of Cu excess during the absorber process is required to obtain a quality microstructure and high performance devices.

  16. Effect of CeLa addition on the microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy

    Energy Technology Data Exchange (ETDEWEB)

    Du, Jiandi [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Ding, Dongyan, E-mail: dyding@sjtu.edu.cn [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Xu, Zhou; Zhang, Junchao; Zhang, Wenlong [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Gao, Yongjin; Chen, Guozhen; Chen, Weigao; You, Xiaohua [Huafon NLM Al Co., Ltd, Shanghai 201506 (China); Chen, Renzong; Huang, Yuanwei; Tang, Jinsong [Shanghai Huafon Materials Technology Institute, Shanghai 201203 (China)

    2017-01-15

    Development of high strength lithium battery shell alloy is highly desired for new energy automobile industry. The microstructures and mechanical properties of Al-Cu-Mn-Mg-Fe alloy with different CeLa additions were investigated through optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rietveld refinement and tensile testing. Experimental results indicate that Al{sub 8}Cu{sub 4}Ce and Al{sub 6}Cu{sub 6}La phases formed due to CeLa addition. Addition of 0.25 wt.% CeLa could promote the formation of denser precipitation of Al{sub 20}Cu{sub 2}Mn{sub 3} and Al{sub 6}(Mn, Fe) phases, which improved the mechanical properties of the alloy at room temperature. However, up to 0.50 wt.% CeLa addition could promote the formation of coarse Al{sub 8}Cu{sub 4}Ce phase, Al{sub 6}Cu{sub 6}La phase and Al{sub 6}(Mn, Fe) phase, which resulted in weakened mechanical properties. - Highlights: •Al-Cu-Mn-Mg-Fe alloys with different CeLa addition were fabricated through casting and rolling. •Al{sub 8}Cu{sub 4}Ce and Al{sub 6}Cu{sub 6}La phases formed after CeLa addition. •Addition of 0.25 wt.% CeLa promoted formation of denser precipitates of Al{sub 20}Cu{sub 2}Mn{sub 3} and Al{sub 6}(Mn, Fe). •Mechanical properties of the alloy was improved after 0.25 wt.% CeLa addition.

  17. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  18. Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Del Río-De Santiago, A.; Méndez-García, V.H. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Martínez-Velis, I.; Casallas-Moreno, Y.L. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); López-Luna, E. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Yu Gorbatchev, A. [IICO-UASLP, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P. 78210, México (Mexico); López-López, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); Cruz-Hernández, E., E-mail: esteban.cruz@uaslp.mx [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico)

    2015-04-01

    Highlights: • The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is found the formation of nanogrooves, nanoleaves, and nanowires. • It is shown the progressive photoluminescence transitions from purely GaAsMn zinc blende (for Mn% = 0.01) to a mixture of zinc blende and wurtzite GaAsMn (for Mn% = 0.2). • A critical thickness for the Mn catalyst effect was determined by RHEED. - Abstract: In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples is strongly influenced and changes from planar to corrugated for Mn% values from 0.01 to 0.05, corresponding to nanostructures on the surface with dimensions of 200–300 nm and with the shape of leave, to nanowire-like structures for Mn% values above 0.05. From reflection high-energy electron diffraction patterns, we observed the growth mode transition from two- to three-dimensional occurring at a Mn% exceeding 0.05. The optical and electrical properties were obtained from photoluminescence (PL) and Hall effect measurements, respectively. For the higher Mn concentration, besides the Mn related transitions at approximately 1.41 eV, PL spectra sharp peaks are present between 1.43 and 1.49 eV, which we related to the coexistence of zinc blende and wurtzite phases in the nanowire-like structures of this sample. At Mn% of 0.04, an increase of the carrier mobility up to a value of 1.1 × 10{sup 3} cm{sup 2}/Vs at 77 K was found, then decreases as Mn% is further increased due to the strengthening of the ionized impurity scattering.

  19. Producing a particle-reinforced AlCuMgMn alloy by means of mechanical alloying; Herstellung einer partikelverstaerkten AlCuMgMn-Legierung durch mechanisches Legieren

    Energy Technology Data Exchange (ETDEWEB)

    Nestler, D.; Wielage, B. [TU Chemnitz, Institut fuer Werkstoffwissenschaft und Werkstofftechnik (Germany); Siebeck, S.

    2012-07-15

    High-energy ball milling (HEM) with subsequent consolidation is a suitable method to produce particle-reinforced aluminium materials. The task of HEM is to distribute the reinforcement particles as homogeneously as possible. A further application of HEM is mechanical alloying (MA). This paper deals with the combination of both applications. Pure metallic powders (Al, Cu, Mg, Mn) were milled together with SiC particles up to 10 h. The composition of the metallic powder corresponds to that of the alloy AA2017 (3.9% Cu, 0.7% Mg, 0.6% Mn). In previous experiments [1], this alloy was used in the form of atomized powder. The changes in microstructure during the formation of the composite powder have been studied by light microscopy, SEM, EDXS and XRD. The results show that the production of composite powders in a single step is possible. This not only allows the economical production of such powders, but also facilitates the use of alloy compositions that are not producible via the melting route, or only producible with difficulty via the melting route. It's possible to produce tailor-made-alloys. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effect of Nickel Equivalent on Austenite Transition Ratio in Ni-Mn-Cu Cast Iron

    Directory of Open Access Journals (Sweden)

    Janus A.

    2013-06-01

    Full Text Available Determined was quantitative effect of nickel equivalent value on austenite decomposition degree during cooling-down castings of Ni-Mn- Cu cast iron. Chemical composition of the alloy was 1.8 to 5.0 % C, 1.3 to 3.0 % Si, 3.1 to 7.7 % Ni, 0.4 to 6.3 % Mn, 0.1 to 4.9 % Cu, 0.14 to 0.16 % P and 0.03 to 0.04 % S. Analysed were castings with representative wall thickness 10, 15 and 20 mm. Scope of the examination comprised chemical analysis (including WDS, microscopic observations (optical and scanning microscopy, image analyser, as well as Brinell hardness and HV microhardness measurements of structural components.

  1. Back surface studies of Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Simchi, Hamed

    Cu(In,Ga)Se2 thin film solar cells have attracted a lot of interest because they have shown the highest achieved efficiency (21%) among thin film photovoltaic materials, long-term stability, and straightforward optical bandgap engineering by changing relative amounts of present elements in the alloy. Still, there are several opportunities to further improve the performance of the Cu(In,Ga)Se2 devices. The interfaces between layers significantly affect the device performance, and knowledge of their chemical and electronic structures is essential in identifying performance limiting factors. The main goal of this research is to understand the characteristics of the Cu(In,Ga)Se2-back contact interface in order to design ohmic back contacts for Cu(In,Ga)Se2-based solar cells with a range of band gaps and device configurations. The focus is on developing either an opaque or transparent ohmic back contact via surface modification or introduction of buffer layers in the back surface. In this project, candidate back contact materials have been identified based on modeling of band alignments and surface chemical properties of the absorber layer and back contact. For the first time, MoO3 and WO 3 transparent back contacts were successfully developed for Cu(In,Ga)Se 2 solar cells. The structural, optical, and surface properties of MoO 3 and WO3 were optimized by controlling the oxygen partial pressure during reactive sputtering and post-deposition annealing. Valence band edge energies were also obtained by analysis of the XPS spectra and used to characterize the interface band offsets. As a result, it became possible to illuminate of the device from the back, resulting in a recently developed "backwall superstrate" device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices in the absorber thickness range 0.1-0.5 microm. Further enhancements were achieved by introducing moderate amounts of Ag into the Cu(In,Ga)Se2 lattice during the co-evaporation method

  2. Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

    2009-04-21

    Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

  3. Mechanical properties of thermomechanical treated hyper-eutectic Al-Si-(Fe, Mn, Cu) materials

    OpenAIRE

    Umezawa, Osamu

    2005-01-01

    Tensile and high-cycle fatigue behavior of thermomechanical treated hyper-eutectic Al-Si-(Fe, Mn, Cu) materials were studied. Through the repeated thermomechanical treatment (RTMT) which is a repeat of the multi steps cold-working followed by heat treatment, Si crystals and/or intermetallic compounds were broken into some fragments and dispersed in the aluminum matrix. Fine dispersion of the second phase particles exhibited good ductility, since early fracture was overcome. A few large Si cry...

  4. Joining of Cu-Mg-Mn Aluminum Alloy with Linear Friction Welding

    OpenAIRE

    A. Medvedev; V. Bychkov; A. Selivanov; Yu. J. Ershova; B. Bolshakov; I.V. Alexаndrov; F. F. Musin

    2014-01-01

    Al-Cu-Mg-Mn alloy samples were joined together with linear friction welding in two conditions, as is, without pretreatment, and after etching the welding interface. The effect of the welding interface condition was evaluated based on microstructure analysis, microhardness and tensile testing at room temperature. Also, the temperature distribution during welding was estimated with an analytical one-dimensional heat conduction model of the welding process and welding process data

  5. Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Sathiabama Thiru

    2015-02-01

    Full Text Available In-situ reflection high-energy electron diffraction (RHEED observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001 using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

  6. In-situ neutron diffraction study of magnetic field induced reorientation in Ni-Mn-Ga under constant stress

    Czech Academy of Sciences Publication Activity Database

    Molnár, Peter; Šittner, Petr; Novák, Václav; Prokleška, J.; Sechovsky, V.; Ouladdiaf, B.; Hanulla, S.P.; Heczko, O.

    2008-01-01

    Roč. 20, č. 10 (2008), 104224/1-104224/7 ISSN 0953-8984 R&D Projects: GA AV ČR(CZ) IAA200100627 Institutional research plan: CEZ:AV0Z10100520 Keywords : shape memory alloys * NiMnGa * neutron diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.900, year: 2008

  7. A high performance quasi-solid-state supercapacitor based on CuMnO2 nanoparticles

    Science.gov (United States)

    Wang, Lu; Arif, Muhammad; Duan, Guorong; Chen, Shenming; Liu, Xiaoheng

    2017-07-01

    Mixed metal or transition metal oxides hold an unveiled potential as one of the most promising energy storage material because of their excellent stability, reliable conductivity, and convenient use. In this work, CuMnO2 nanoparticles are successfully prepared by a facile hydrothermal process with the help of dispersing agent cetyltrimethylammonium bromide (CTAB). CuMnO2 nanoparticles possess a uniform quadrilateral shape, small size (approximately 25 × 25 nm-35 × 35 nm), excellent dispersity, and large specific surface specific (56.9 m2 g-1) with an interparticle mesoporous structure. All these characteristics can bring benefit for their application in supercapacitor. A quasi-solid-state symmetric supercapacitor device is assembled by using CuMnO2 nanoparticles as both positive electrode and negative electrode. The device exhibits good supercapacitive performance with a high specific capacitance (272 F g-1), a maximum power density of 7.56 kW kg-1 and a superior cycling stability of 18,000 continuous cycles, indicating an excellent potential to be used in energy storage device.

  8. TRACE METAL CONTENT (Cu, Zn, Mn AND Fe) IN URTICA DIOICA L. AND PLANTAGO MAJOR L.

    Science.gov (United States)

    Krolak, Elzbieta; Raczuk, Jolanta; Borkowska, Lidia

    2016-11-01

    The aim of the study was to compare the contents of Cu, Zn, Mn and Fe in the washed and unwashed leaves and roots of two plant species: Urica dioica L. and Plantago major L., used in herbal medicine. These two herb species occur in the same environmental habitats, yet their morphological structure is different. The soil and plant samples for analyses were collected from an uncontaminated area in Eastern Poland. In each habitat location, the samples were taken from sandy soils with slightly acidic and neutral pH values. The obtained results showed that U. dioica and P. major accumulated similar amounts of trace metals, such as: Cu, Zn and Fe, in leaves, despite the differences in the morphological structure of their overground parts. The content of Mn in leaves U. dioica was about twice as much as in P. major. Also, no differences in the metal content were observed between washed and unwashed leaves of both species. However, in the same habitat conditions, a significantly higher content of Cu, Zn and Mn was found in the roots of P. major than U. dioica. The content of Fe in the roots was similar in both species. P. major and U. dioica may be a valuable source of microelements, if they are obtained from unpolluted habitats.

  9. Effect of alloying elements on solidification of primary austenite in Ni-Mn-Cu cast iron

    Directory of Open Access Journals (Sweden)

    A. Janus

    2011-04-01

    Full Text Available Within the research, determined were direction and intensity of alloying elements influence on solidification way (directional orvolumetric of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu. 50 cast shafts dia. 20 mm were analysed.Chemical composition of the alloy was as follows: 1.7 to 3.3 % C, 1.4 to 3.1 % Si, 2.8 to 9.9 % Ni, 0.4 to 7.7 % Mn, 0 to 4.6 % Cu, 0.14 to0.16 % P and 0.03 to 0.04 % S. The discriminant analysis revealed that carbon influences solidification of primary austenite dendrites most intensively. It clearly increases the tendency to volumetric solidification. Influence of the other elements is much weaker. This means that the solidification way of primary austenite dendrites in hypoeutectic austenitic cast iron Ni-Mn-Cu does not differ from that in an unalloyed cast iron.

  10. Electronic structure and x-ray spectroscopy of Cu2MnAl1-xGax

    Science.gov (United States)

    Rai, D. P.; Ekuma, C. E.; Boochani, A.; Solaymani, S.; Thapa, R. K.

    2018-04-01

    We explore the electronic and related properties of Cu2MnAl1-xGax with a first-principles, relativistic multiscattering Green function approach. We discuss our results in relation to existing experimental data and show that the electron-core hole interaction is essential for the description of the optical spectra especially in describing the X-ray absorption and magnetic circular dichroism spectra at the L2,3 edges of Cu and Mn.

  11. Effect of tellurium on machinability and mechanical property of CuAlMnZn shape memory alloy

    International Nuclear Information System (INIS)

    Liu Na; Li Zhou; Xu Genying; Feng Ze; Gong Shu; Zhu Lilong; Liang Shuquan

    2011-01-01

    Highlights: → A novel free-machining Cu-7.5Al-9.7Mn-3.4Zn-0.3Te (wt.%) shape memory alloy has been developed. → The size of dispersed particles with richer Te is 2-5 μm. → The CuAlMnZnTe alloy has good machinability which approached that of BZn15-24-1.5 due to the addition of Te. → Its shape memory property keeps the same as that of CuAlMnZn alloy with free Te. → The CuAlMnZn shape memory alloy with and without Te both have good ductile as annealed at 700 deg. C for 15 min. - Abstract: The microstructure transition, shape memory effect, machinability and mechanical property of the CuAlMnZn alloy with and without Te have been studied using X-ray diffraction analysis, chips observation and scanning electron microscopy (SEM), tensile strength test and differential scanning calorimeter (DSC), and semi-quantitative shape memory effect (SME) test. The particles with richer Te dispersedly distributed in grain interior and boundary with size of 2-5 μm. After the addition of Te, the CuAlMnZnTe alloy machinability has been effectively increased to approach that of BZn15-24-1.5 and its shape memory property remains the same as the one of CuAlMnZn alloy. The CuAlMnZn shape memory alloys with and without Te both have good ductility as annealed at 700 deg. C for 15 min.

  12. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

    DEFF Research Database (Denmark)

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi

    2013-01-01

    .e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host...

  13. Selective production of oxygenates from CO2 hydrogenation over mesoporous silica supported Cu-Ga nanocomposite catalyst

    KAUST Repository

    Huang, Kuo-Wei; Hengne, Amol Mahalingappa; Bhatte, Kushal Deepak; Ould-Chikh, Samy; Saih, Youssef; Basset, Jean-Marie

    2017-01-01

    Carbon dioxide hydrogenation to oxygenates (methanol and dimethyl ether (DME)) was investigated over bifunctional supported copper catalysts promoted with gallium (Ga). Supported Cu-Ga nanocomposite catalysts were characterized by X-ray diffraction

  14. Thermodynamic properties of Al-Mn, Al-Cu, and Al-Fe-Cu melts and their relations to liquid and quasicrystal structure

    International Nuclear Information System (INIS)

    Zaitsev, A I; Zaitseva, N E; Shimko, R Yu; Arutyunyan, N A; Dunaev, S F; Kraposhin, V S; Lam, Ha Thanh

    2008-01-01

    Thermodynamic properties of molten Al-Mn, Al-Cu and Al-Fe-Cu alloys in a wide temperature range of 1123-1878 K and the whole range of concentrations have been studied using the integral effusion method and Knudsen mass spectrometry. Thermodynamic functions of melts were described by the associated solution model. The possibility of icosahedral quasicrystal (i-QC) precipitation from liquid Al-Mn and Al-Cu-Fe alloys was found to be a consequence of the existence in liquid associates (clusters). A geometric model is suggested for the structure of associates in liquid

  15. Electronic configuration of the c(2 x 2)MnCu two-dimensional alloy in layered structures supported on Cu(100)

    International Nuclear Information System (INIS)

    Gallego, S; Munoz, M C; Huttel, Y; Avila, J; Asensio, M C

    2003-01-01

    The c(2 x 2)MnCu surface alloy on Cu(100) can be considered as a purely two-dimensional magnetic system where the Mn atoms exhibit a large corrugation closely related to their high spin moment. In this paper we investigate the influence of the atomic environment on the electronic and magnetic properties of the two-dimensional alloyed layer, extending our study to the less known multilayered system made of MnCu two-dimensional alloy layers embedded in a Cu crystal. The analysis is based on angle-resolved photoelectron spectroscopy measurements and calculations using the Green function matching method, which allows us to treat exactly the projection of the three-dimensional lattice on the c(2 x 2) plane. A complete study of the valence band is performed along the two-dimensional Brillouin zone in a wide energy range. We show that the presence of Mn results in an important redistribution of the spin-polarized electronic states of the neighbouring Cu atoms. This redistribution is not accompanied by a net charge transfer between different atoms, and also the spin moment of Cu remains small. Most of the new features induced by Mn in the surface alloy are also present in the multilayered system, evidencing that they are specific to the two-dimensional alloyed layer and not surface effects

  16. A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Alvarez, H., E-mail: humberto.rodriguez@helmholtz-berlin.de [International Iberian Nanotechnology Laboratory, Avenida Mestre Jose Veiga s/n, 4715-330 Braga (Portugal); Helmholtz-Zentrum Berlin, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Mainz, R. [Helmholtz-Zentrum Berlin, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Sadewasser, S. [International Iberian Nanotechnology Laboratory, Avenida Mestre Jose Veiga s/n, 4715-330 Braga (Portugal)

    2014-05-28

    We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se{sub 2} thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se{sub 2} surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of a double Ga gradient within the Cu(In,Ga)Se{sub 2} layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.

  17. A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

    International Nuclear Information System (INIS)

    Rodriguez-Alvarez, H.; Mainz, R.; Sadewasser, S.

    2014-01-01

    We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se 2 thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se 2 surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of a double Ga gradient within the Cu(In,Ga)Se 2 layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.

  18. Investigation of Cu-poor and Cu-rich Cu(In,Ga)Se{sub 2}/CdS interfaces using hard X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ümsür, B., E-mail: buenyamin.uemsuer@helmholtz-berlin.de [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Calvet, W.; Höpfner, B.; Steigert, A.; Lauermann, I.; Gorgoi, M.; Prietzel, K.; Navirian, H.A.; Kaufmann, C.A.; Unold, T. [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, M. Ch. [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Department of Physics, Arnimallee 14, D-14195 Berlin (Germany)

    2015-05-01

    Cu-poor and Cu-rich Cu(In,Ga)Se{sub 2} (CIGSe) absorbers were used as substrates for the chemical bath deposition of ultrathin CdS buffer layers in the thickness range of a few nanometers in order to make the CIGSe/CdS interface accessible by hard X-ray photo-emission spectroscopy. The composition of both, the absorber and the buffer layer as well as the energetics of the interface was investigated at room temperature and after heating the samples to elevated temperatures (200 °C, 300 °C and 400 °C). It was found that the amount of Cd after the heating treatment depends on the near surface composition of the CIGSe absorber. No Cd was detected on the Cu-poor surface after the 400 °C treatment due to its diffusion into the CIGSe layer. In contrast, Cd was still present on the Cu-rich surface after the same treatment at 400 °C. - Highlights: • Cd diffusion into Cu(In,Ga)Se{sub 2} (CIGSe) absorber is investigated. • Cu-poor and Cu-rich CIGSe samples are compared. • Cd diffusion into CIGSe is found to be dependent on the surface composition of CIGSe.

  19. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    International Nuclear Information System (INIS)

    Zhao, Qian; Xiong, Zhihua; Luo, Lan; Sun, Zhenhui; Qin, Zhenzhen; Chen, Lanli; Wu, Ning

    2017-01-01

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  20. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

    2017-02-28

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  1. Direct observation of magnetic domains by Kerr microscopy in a Ni-Mn-Ga magnetic shape-memory alloy

    Czech Academy of Sciences Publication Activity Database

    Perevertov, Oleksiy; Heczko, Oleg; Schaefer, R.

    2017-01-01

    Roč. 95, č. 14 (2017), s. 1-5, č. článku 144431. ISSN 2469-9950 R&D Projects: GA ČR GA15-00262S Institutional support: RVO:68378271 Keywords : shape memory * magnetic domains * Kerr microscopy * N-Mn-Ga alloy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  2. Magnetic domains and twin microstructure of single crystal Ni-Mn-Ga exhibiting magnetic shape memory effect

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Kopecký, Vít; Fekete, Ladislav; Jurek, Karel; Kopeček, Jaromír; Straka, L.; Seiner, Hanuš

    2015-01-01

    Roč. 51, č. 11 (2015), s. 7150406 ISSN 0018-9464 R&D Projects: GA ČR GB14-36566G; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic domain * magnetic shape memory * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

  3. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    Science.gov (United States)

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the direction, which is theoretically predicted to produce a high Curie temperature.

  4. Magnet properties of Mn70Ga30 prepared by cold rolling and magnetic field annealing

    International Nuclear Information System (INIS)

    Ener, Semih; Skokov, Konstantin P.; Karpenkov, Dmitriy Yu.; Kuz'min, Michael D.; Gutfleisch, Oliver

    2015-01-01

    The remanence and coercivity of arc melted Mn 70 Ga 30 can be substantially improved by cold rolling. For best performance the rolled material should be annealed at T=730 K in the presence of a magnetic field of 1 T. The so-obtained magnet has a remanence of 0.239 T and a coercivity of 1.24 T at room temperature. The underlying reason for the high coercivity and remanence is the increase of the content of a metastable ferrimagnetic D0 22 phase at the expense of the normally stable anti-ferromagnetic D0 19 . Magnetic field significantly increases the nucleation rate of the ferromagnetic D0 22 phase that leads to grain size refinement and as a consequence of improving remanence and coercive field. - Highlights: • Alternative synthesis method for D0 22 phase formation in Mn–Ga is developed. • Effect of cold rolling and annealing on magnetic properties of Mn 70 Ga 30 is examined. • Small magnetic fields are sufficient to accelerate nucleation of the D0 22 phase

  5. Fiber laser drilling of Ni46Mn27Ga27 ferromagnetic shape memory alloy

    Science.gov (United States)

    Biffi, C. A.; Tuissi, A.

    2014-11-01

    The interest in ferromagnetic shape memory alloys (SMAs), such as NiMnGa, is increasing, thanks to the functional properties of these smart and functional materials. One of the most evident properties of these systems is their brittleness, which makes attractive the study of unconventional manufacturing processes, such as laser machining. In this work the interaction of laser beam, once focalized on the surface of Ni46Mn27Ga27 [at%] alloy, has been studied. The experiments were performed with a single laser pulse, using a 1 kW continuous wave fiber laser. The morphology of the laser machined surfaces was evaluated using scanning electron microscopy, coupled with energetic dispersion spectroscopy for the measurement of the chemical composition. The results showed that the high quality of the laser beam, coupled with great irradiances available, allow for blind or through holes to be machined on 1.8 mm plates with a single pulse in the order of a few ms. Holes were produced with size in the range of 200-300 μm; despite the long pulse duration, low amount of melted material is produced around the hole periphery. No significant variation of the chemical composition has been detected on the entrance surfaces while the exit ones have been characterized by the loss of Ga content, due to its melting point being significantly lower with respect to the other alloying elements.

  6. Structural, optical, dielectric and magnetic studies of gadolinium-added Mn-Cu nanoferrites

    Science.gov (United States)

    Kanna, R. Rajesh; Lenin, N.; Sakthipandi, K.; Kumar, A. Senthil

    2018-05-01

    Spinel ferrite with the general formula Mn1-xCuxFe1.85Gd0.15O4 (x = 0.2, 0.4, 0.6 and 0.8) was synthesized using the standard sonochemical method. The structure, optical, morphology, dielectric and magnetic properties of the prepared Mn1-xCuxFe1.85Gd0.15O4 nanoferrites were exhaustively investigated using various characterization techniques. The phase purity, secondary phase and crystallite parameters were studied from X-ray diffraction patterns. Fourier transform infrared spectra showed two absorption bands of transition metal oxides in the frequency range from 400 to 650 cm-1, which are related to asymmetric stretching modes of the spinel ferrites (AB2O4). Raman spectra have five active modes illustrating the vibration of O2- ions at both tetrahedral (A) site and octahedral (B) site ions. The wide and narrow scan spectrum from X-ray photoelectron spectroscopy results confirmed the presence of Mn, Cu, Gd, Fe, C and O elements in the composition. The oxidation state and core level of the photo electron peaks of Mn 2p, Cu 2p, Gd 3d, Fe 2p and O 1s were analyzed. The influence of the Cu2+ concentration in Mn1-xCuxFe1.85Gd0.15O4 on the morphology, varying from nanorods, nanoflakes to spherical, was explored on the basis of scanning electron microscopy images. Ultraviolet diffuse reflectance spectroscopy studies indicated that the optical bandgap (5.12-5.32 eV) of the nanoferrites showed an insulating behavior. The dielectric constant, loss tangent and complex dielectric constant values decreased with an increase in frequency with the addition of Gd3+ content. A vibrating sample magnetometer showed that the prepared nanoferrites had a soft ferromagnetic nature. The magnetic parameter changed markedly with an increase in the Cu content in Mn1-xCuxFe1.85Gd0.15O4 nanoferrites. The optical, dielectric and magnetic properties were considerably enhanced with the addition of Gd3+ ions in the spinel nanoferrites.

  7. Influence of Homogenization on Microstructural Response and Mechanical Property of Al-Cu-Mn Alloy.

    Science.gov (United States)

    Wang, Jian; Lu, Yalin; Zhou, Dongshuai; Sun, Lingyan; Li, Renxing; Xu, Wenting

    2018-05-29

    The evolution of the microstructures and properties of large direct chill (DC)-cast Al-Cu-Mn alloy ingots during homogenization was investigated. The results revealed that the Al-Cu-Mn alloy ingots had severe microsegregation and the main secondary phase was Al₂Cu, with minimal Al₇Cu₂Fe phase. Numerous primary eutectic phases existed in the grain boundary and the main elements were segregated at the interfaces along the interdendritic region. The grain boundaries became discontinuous, residual phases were effectively dissolved into the matrix, and the segregation degree of all elements was reduced dramatically during homogenization. In addition, the homogenized alloys exhibited improved microstructures with finer grain size, higher number density of dislocation networks, higher density of uniformly distributed θ' or θ phase (Al₂Cu), and higher volume fraction of high-angle grain boundaries compared to the nonhomogenized samples. After the optimal homogenization scheme treated at 535 °C for 10 h, the tensile strength and elongation% were about 24 MPa, 20.5 MPa, and 1.3% higher than those of the specimen without homogenization treatment.

  8. Investigation of the crystallographic structure of hydrogenated (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph; Huebl, Hans; Galler, Bastian; Brandt, Martin [Walter Schottky Institut, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Martinez-Criado, Gema; Ciatto, Gianluca [ESRF, 6 rue J. Horowitz, Boite Postale 220, 38043 Grenoble (France); Bonapasta, Aldo Amore; Filippone, Francesco [ISM, Via Salaria, CP 10, 00016 Monterotondo Stazione (Italy); Schoch, Wladimir; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

    2007-07-01

    The lattice expansion of (Ga,Mn)As samples after deuteration {lambda}V{sub D}/V{sub Mn-As}Mn and a neighboring As atom, but the difference to the volume expansion expected for the antibonding (AB) configuration is too small to draw unambiguous conclusions. However, the absence of a second peak or shoulder in the Fourier transform of the Mn K-edge extended X-ray absorption fine structure (EXAFS) {chi} function corresponding to the first coordination shell of deuterated samples, as well as the comparison of the corresponding X-ray absorption near edge structure (XANES) with simulations of the different complexes strongly suggests that the BC complex predicted by theoretical calculations can be excluded in the deuterated samples. Rather, both EXAFS and XANES spectra can be explained by the formation of AB complexes or complexes in which the D atom is not bound to a nearest As neighbor, but a more distant As atom.

  9. Luminescence of Mn{sup 4+} in the orthorhombic perovskite, LaGaO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, A.M., E-mail: srivastava@ge.com [GE Global Research, One Research Circle, Niskayuna, New York 12309 (United States); Camardello, S.J. [GE Global Research, One Research Circle, Niskayuna, New York 12309 (United States); Brik, M.G. [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Ravila 14C, Tartu 50411 (Estonia); Institute of Physics, Jan Dlugosz University, PL-42200 Czestochowa (Poland)

    2017-03-15

    The optical properties of Mn{sup 4+} (3d{sup 3}) in the orthorhombic perovskite, LaGaO{sub 3} are investigated. The Mn{sup 4+} energy levels are calculated using the exchange charge model of crystal-field theory. The calculated Mn{sup 4+} energy levels are in good agreement with the experimental spectroscopic data. The results of our calculations yield the crystal-field splitting and Racah parameters of Dq=1926 cm{sup −1}, B=780 cm{sup −1} and C=2878 cm{sup −1}, with C/B=3.7. The emission spectrum is assigned on the basis of the zero phonon line corresponding to the {sup 2}E{sub g}→{sup 4}A{sub 2g} transition and its vibrational sidebands. A comparative study of the variation in the crystal-field splitting and the Mn{sup 4+} {sup 2}E{sub g} energy level position in materials with the perovskite structure is also presented.

  10. Annealing influence on the atomic ordering and magnetic moment in a Ni-Mn-Ga alloy

    International Nuclear Information System (INIS)

    Gutierrez, J.; Lazpita, P.; Barandiaran, J.M.; Fdez-Gubieda, M.L.; Chaboy, J.; Kawamura, N.

    2007-01-01

    We have studied an alloy of composition Ni 51 Mn 28 Ga 21 prepared by rapid quenching in the form of a ribbon, with transformation temperature T M =337 K below the magnetic-order temperature, T C =344 K. Annealing of the samples was performed at 600 K for different times. From magnetic characterization a clear increase of the saturation magnetization accompanied with an increase of T C (up to 20 K) and T M (about 10 K) has been observed. XMCD measurements of both as-quenched and annealed samples have revealed great changes for the Mn and also the existence of a strong Ni signal. These results point out a possible non-negligible role of Ni, through the polarization of the conduction band, into driving the interplay between annealing and the magnetic properties in these materials

  11. Composition-dependent nanostructure of Cu(In,Ga)Se{sub 2} powders and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schnohr, C.S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Kämmer, H.; Steinbach, T.; Gnauck, M. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, T.; Kaufmann, C.A.; Stephan, C. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Schorr, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

    2015-05-01

    Atomic-scale structural parameters of Cu(In,Ga)Se{sub 2} powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. - Highlights: • Cu(In,Ga)Se{sub 2} powders and thin films are studied with X-ray absorption spectroscopy. • Structural parameters are determined as a function of the In and Cu contents. • The element-specific average bond lengths are identical for powders and thin films. • The Ga-Se/In-Se bond length variation is smaller for thin films than for powders. • The differences are believed to stem from the different history of the Cu content.

  12. The evaluation of Cu, Zn, Mn, and Se concentrations in the hair of South American camelids

    Directory of Open Access Journals (Sweden)

    Milada Holasová

    2017-01-01

    Full Text Available The aim of this study was to monitor the content of trace elements in the hair of South American camelids and to evaluate the effect of coat colour, species, age, and sex on their concentration in the hair. The samples were collected from 77 animals – 23 llamas (Llama guanicoe f. gllama and 54 alpacas (Llama guanicoe f. pacos during a spring health check. The concentrations of copper (Cu, zinc (Zn, and manganese (Mn were determined by Flame Atomic Absorption Spectrometry and selenium (Se by Hydride Generation Atomic Absorption Spectrometry. We found the following concentrations (mean ± standard deviation; mg/kg dry matter in the llama hair: Cu 9.70 ± 4.69; Zn 145.20 ± 21.07; Mn 12.49 ± 10.14; Se 0.25 ± 0.14. In alpaca hair we found the following concentrations: Cu 10.22 ± 2.90; Zn 129.81 ± 19.01; Mn 12.67 ± 13.85; Se 0.48 ± 0.24. We found a significant difference between llamas and alpacas in Zn and Se concentrations in the hair. From all the evaluated factors we found that coat colour had the highest effect on Mn and Se concentration. Dark haired animals had significantly higher concentrations of these trace elements than other coloured groups. The evaluation of the concentration of trace elements in the hair of llamas has a potential to be used for the evaluation of long-term status of trace elements in the body; however, it is necessary to continue with experimental work in this area. Our findings can serve as a pilot study for further works in this field.

  13. Positron Annihilation Spectroscopy and Small Angle Neutron Scattering Characterization of Nanostructural Features in Irradiated Fe-Cu-Mn Alloys

    International Nuclear Information System (INIS)

    Wirth, B D; Asoka-Kumar, P; Howell, R H; Odette, G R; Sterne, P A

    2001-01-01

    Radiation embrittlement of nuclear reactor pressure vessel steels results from a high number density of nanometer sized Cu-Mn-Ni rich precipitates (CRPs) and sub-nanometer matrix features, thought to be vacancy-solute cluster complexes (VSC). However, questions exist regarding both the composition of the precipitates and the defect character and composition of the matrix features. We present results of positron annihilation spectroscopy (PAS) and small angle neutron scattering (SANS) characterization of irradiated and thermally aged Fe-Cu and Fe-Cu-Mn alloys. These complementary techniques provide insight into the composition and character of both types of nanoscale features. The SANS measurements indicate populations of CRPs and VSCs in both alloys. The CRPs are coarser in the Fe-Cu alloy and the number densities of CRP and VSC increase with the addition of Mn. The PAS involved measuring both the positron lifetimes and the Doppler broadened annihilation spectra in the high momentum region to provide elemental sensitivity at the annihilation site. The spectra in Fe-Cu-Mn specimens thermally aged to peak hardness at 450 C and irradiated at 288 C are nearly identical to elemental Cu. Positron lifetime and spectrum measurements in Fe-Cu specimens irradiated at 288 C clearly show the existence of long lifetime (∼500 ps) open volume defects, which also contain Cu. Thus the SANS and PAS provide a self-consistent picture of nanostructures composed of CRPs and VSCs and tend to discount high Fe concentrations in the CRPs

  14. 4-CM2 CuInGaSe2 based solar cells

    International Nuclear Information System (INIS)

    Devaney, W.E.; Stewart, J.M.; Chen, W.S.

    1990-01-01

    This paper reports that polycrystalline thin-film solar cells with the structure ZnO/CdZnS/CuInGaSe 2 have been fabricated with larger single cell areas than have been previously reported. A cell of area 4-cm 2 has been made with an Am1.5, 100 mW/cm 2 total area conversion efficiency of (11.1% 912.0% active area) and AMO conversion efficiency of 10.0% (10.9% active area). The CuInGaSe 2 layer had a gallium to indium ratio of 0.26:0.74 with a band gap of approximately 1.15 eV. The cells use an isolated tab design for the negative (grid) contact, demonstrating the ability to pattern the semiconductor layers. Such CuInGaSe 2 based cells may be suitable both for large area terrestrial applications and for single-junction space cell applications

  15. Inkjet printed Cu(In,Ga)S{sub 2} nanoparticles for low-cost solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Barbé, Jérémy, E-mail: jeremy.barbe@kaust.edu.sa; Eid, Jessica [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia); Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael [Zentrum fur Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW) (Germany); Agrawal, Rakesh [Purdue University, School of Chemical Engineering (United States); Del Gobbo, Silvano, E-mail: silvano.delgobbo@gmail.com [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia)

    2016-12-15

    Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S{sub 2} (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

  16. Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

    KAUST Repository

    Barbe, Jeremy

    2016-12-13

    Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

  17. Phenomenological analysis of thermal hysteresis in Ni-Mn-Ga Heusler alloys

    Science.gov (United States)

    Zagrebin, M. A.; Sokolovskiy, V. V.; Buchelnikov, V. D.

    2018-05-01

    The manipulation of thermal hysteresis in Ni-Mn-Ga Heusler alloys with coupled magnetostructural phase transition is studied theoretically using the Landau theory, including magnetic, elastic and crystal lattice modulation order parameters as well as an external magnetic field. It is shown that for the assigned combination of phenomenological parameters, in the phase diagrams, the Austenite-Martensite first-order phase transition has a finite (critical) point in which the thermal hysteresis is disappeared. Moreover, this point depends on the relation between modulation and elastic constants as well as on the magnetic field. Obtained results have been compared with other theoretical end experimental data.

  18. The ferromagnetic shape-memory effect in Ni-Mn-Ga

    International Nuclear Information System (INIS)

    Marioni, M.A.; O'Handley, R.C.; Allen, S.M.; Hall, S.R.; Paul, D.I.; Richard, M.L.; Feuchtwanger, J.; Peterson, B.W.; Chambers, J.M.; Techapiesancharoenkij, R.

    2005-01-01

    Active materials have long been used in the construction of sensors and devices. Examples are piezo-electric ceramics and shape memory alloys. The more recently developed ferromagnetic shape-memory alloys (FSMAs) have received considerable attention due to their large magnetic field-induced, reversible strains (up to 10%). In this article, we review the basic physical characteristics of the FSMA Ni-Mn-Ga (crystallography, thermal, mechanical and magnetic behavior). Also, we present some of the works currently under way in the areas of pulse-field and acoustic-assisted actuation, and vibration energy absorption

  19. Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bezerra, Anibal T., E-mail: anibal@df.ufscar.br; Farinas, Paulo F.; Studart, Nelson [Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); DISSE - Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores, CNPq/MCT, Rio de Janeiro, RJ (Brazil); Castelano, Leonardo K. [Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); Degani, Marcos H.; Maialle, Marcelo Z. [Faculdade de Ciências Aplicadas, Universidade Estadual de Campinas, 13484-350 Limeira, SP (Brazil); DISSE - Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores, CNPq/MCT, Rio de Janeiro, RJ (Brazil)

    2014-01-13

    Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

  20. Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

    Science.gov (United States)

    Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Kiessling, T.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

    2009-05-01

    We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

  1. Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

    International Nuclear Information System (INIS)

    Tang, N.Y.

    2009-01-01

    The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

  2. Ni-Mn-Ga single crystals with very low twinning stress

    International Nuclear Information System (INIS)

    Straka, L; Haenninen, H; Soroka, A; Sozinov, A

    2011-01-01

    Twinning stress or mechanical hysteresis associated with the twin boundary motion is one of the most essential parameters which determine the actuating performance of magnetic shape memory alloys. Recent effort at AdaptaMat Ltd. to decrease the twinning stress resulted in a consistent production of Ni-Mn-Ga magnetic shape memory single crystals with the twinning stress of about 0.1 MPa, which is much lower than previously reported. In this work, the mechanical and magnetomechanical response of the developed crystals is discussed in detail and the importance of adjustment of the twin microstructure for obtaining an optimal actuating behavior is illustrated.

  3. Synthesis, characterization and electrocatalytic properties of delafossite CuGaO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Jahangeer [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States); Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia); Mao, Yuanbing, E-mail: yuanbing.mao@utrgv.edu [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States)

    2016-10-15

    Delafossite CuGaO{sub 2} has been employed as photocatalysts for solar cells, but their electrocatalytic properties have not been extensively studied, especially no comparison among samples made by different synthesis routes. Herein, we first reported the successful synthesis of delafossite CuGaO{sub 2} particles with three different morphologies, i.e. nanocrystalline hexagons, sub-micron sized plates and micron–sized particles by a modified hydrothermal method at 190 °C for 60 h [1–3], a sono-chemical method followed by firing at 850 °C for 48 h, and a solid state route at 1150 °C, respectively. Morphology, composition and phase purity of the synthesized samples was confirmed by powder X-ray diffraction and Raman spectroscopic studies, and then their electrocatalytic performance as active and cost effective electrode materials to the oxygen and hydrogen evolution reactions in 0.5 M KOH electrolyte versus Ag/AgCl was investigated and compared under the same conditions for the first time. The nanocrystalline CuGaO{sub 2} hexagons show enhanced electrocatalytic activity than the counterpart sub-micron sized plates and micron-sized particles. - Graphical abstract: Representative delafossite CuGaO2 samples with sub-micron sized plate and nanocrystalline hexagon morphologies accompanying with chronoamperometric voltammograms for oxygen evolution reaction and hydrogen evolution reaction in 0.5 M KOH electrolyte after purged with N{sub 2} gas. - Highlights: • Delafossite CuGaO{sub 2} with three morphologies has been synthesized. • Phase purity of the synthesized samples was confirmed. • Comparison on their electrocatalytic properties was made for the first time. • Their use as electrodes for oxygen and hydrogen evolution reactions was evaluated. • Nanocrystalline CuGaO{sub 2} hexagons show highest electrocatalytic activity.

  4. A study on the cementation of Cu, Ni and Co ions with Mn powders in chloride solution

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Jae-Woo [Daejin University, Pochun-gun(Korea); Ahn, Jong-Gwan [Korea Univ., Seoul(Korea); Park, Kyung-Ho [Korea Institute of Geology Mining and Materials, Taejeon (Korea)

    2000-06-30

    A study on the cementation for the recovery of Cu, Ni and Co with Mn metallic powders in leaching solution from the manganese nodule that have removed Fe ions was studied. The results showed that the recovery efficiencies of metal ions with Mn powders increased when the temperature, pH and the concentration of chloride ions were increased in mixed solution. And the recovery efficiencies of Cu was 98% and not changed with the addition amounts of Mn powders but, in case of Co and Ni, the recovery efficiencies were increased with the addition amounts. The particle size of precipitate was about 5 {mu}m. From the results of experiment we proposed the two-step cementation process for the recovery of Cu, Ni and Co with Mn powders. (author). 9 refs., 4 tabs., 14 figs.

  5. Effect of iron promoter on structure and performance of CuMnZnO catalyst for higher alcohols synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Mingyue [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Qiu, Minghuang [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Graduate School of Chinese Academy of Science, Beijing 100049 (China); Wang, Tiejun [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Ma, Longlong; Wu, Chuangzhi [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Liu, Jianguo [Key Laboratory of Renewable Energy and Natural Gas Hydrate, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Guangzhou Institute of Energy Conversion, Chinese Academy of Science, Guangzhou Guangdong 510640 (China); Graduate School of Chinese Academy of Science, Beijing 100049 (China)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Incorporation of iron promotes the dispersion of catalyst particles. Black-Right-Pointing-Pointer Adding iron facilitates the separation of CuO from the Cu-Mn solid solution. Black-Right-Pointing-Pointer Both the copper and iron carbides are well dispersed in higher iron amount. Black-Right-Pointing-Pointer The selectivity to C{sub 2}{sup +}OH is promoted by increasing iron concentration. -- Abstract: Effect of iron promoter on the microstructures of CuMnZnO catalysts was investigated by N{sub 2} physical adsorption (BET), X-ray diffraction (XRD), and temperature-programmed reduction of hydrogen (H{sub 2}-TPR). Higher alcohols synthesis (HAS) was performed in a fixed bed reactor. The characterization results indicated that incorporation of iron in the CuMnZnO catalyst resulted in the increase of BET surface area and the dispersion of catalyst particles. Adding iron facilitated the formation of Fe-Mn solid solution and reduced the interaction between copper and manganese, which promoted the separation of CuO from the Cu-Mn solid solution and the reduction of the catalyst. In the HAS reaction, the catalytic activity of CO hydrogenation and the selectivity to C{sub 2}{sup +}OH and hydrocarbons presented an increasing trend with the increase in iron concentration, which may be attributed to the synergistic effect between the dispersed copper and iron carbides.

  6. Defect chemistry in CuGaS2 thin films: A photoluminescence study

    International Nuclear Information System (INIS)

    Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

    2007-01-01

    In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

  7. The structural, electronic and magnetic properties of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Gangxu [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Xiang, Gang, E-mail: gxiang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Luo, Jia; Tang, Zhijie [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Zhang, Xi, E-mail: xizhang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China)

    2015-06-15

    We systematically investigate the ground-state magnetic properties of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters (x=0, 2, 4, 6, and 8) within the framework of density functional theory (DFT) using a strategy that successively adopts the particle swarm optimization (CALYPSO) code and fixed spin-moment (FSM) method. The results show that for Ga{sub 8−x}Mn{sub x}As{sub 8} in the ground states or low-lying isomers, Mn atoms tend to assemble at the core of the clusters and the ferrimagnetic Mn–Mn couplings are identified for Ga{sub 8−x}Mn{sub x}As{sub 8} (x=4, 6, and 8), while Ga{sub 8}As{sub 8} and Ga{sub 6}Mn{sub 2}As{sub 8} are nonmagnetic. The possibility of multiple ground states of Ga{sub 8−x}Mn{sub x}As{sub 8} (x=4, 6, and 8) is also demonstrated. The binding energy and LUMO–HOMO gap analysis show that Ga{sub 8−x}Mn{sub x}As{sub 8} clusters with large x are more likely synthesized and exhibit stronger chemical reactivity. - Highlights: • The ground-state structural and magnetic configurations of Ga{sub 8-x}Mn{sub x}As{sub 8} clusters are predicted by using the particle swarm optimization (CALYPSO) code and fixed spin-moment method. • For the ground state and low-lying isomers of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters, Mn atoms are gathered at the core of cluster, and ferrimagnetic Mn–Mn coupling is found. • Ga{sub 8−x}Mn{sub x}As{sub 8} with large x is more likely formed and reacts with each other to create larger clusters.

  8. Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

    2013-11-01

    Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

  9. Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2013-01-01

    The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

  10. Ag2CuMnO4: A new silver copper oxide with delafossite structure

    International Nuclear Information System (INIS)

    Munoz-Rojas, David; Subias, Gloria; Oro-Sole, Judith; Fraxedas, Jordi; Martinez, Benjamin; Casas-Cabanas, Montse; Canales-Vazquez, Jesus; Gonzalez-Calbet, Jose; Garcia-Gonzalez, Ester; Walton, Richard I.; Casan-Pastor, Nieves

    2006-01-01

    The use of hydrothermal methods has allowed the synthesis of a new silver copper mixed oxide, Ag 2 CuMnO 4 , the first example of a quaternary oxide containing both elements. It crystallizes with the delafossite 3R structure, thus being the first delafossite to contain both Ag and Cu. Synthesis conditions affect the final particle size (30-500nm). Powder X-ray diffraction Rietveld refinement indicates a trigonal structure (R3-bar m) and cell parameters a=2.99991A and c=18.428A, where Cu and Mn are disordered within the octahedral B positions in the plane and linearly coordinated Ag occupies de A position between layers. X-ray absorption near edge spectroscopy (XANES) for copper and manganese, and XPS for silver evidence +2, +4, and +1 oxidation states. The microstructure consists of layered particles that may form large twins showing 5nm nanodomains. Finally, magnetic measurements reveal the existence of ferromagnetic coupling yielding in-plane moments that align antiferromagnetically at lower temperatures. The singularity of the new phase resides on the fact that is an example of a bidimensional arrangement of silver and copper in an oxide that also shows clear bidimensionality in its physical properties. That is of special relevance to the field of high T c superconducting oxides, while the ferromagnetic coupling in a bidimensional system deserves itself special attention

  11. Luminescence investigation of Cu(In,Ga)Se{sub 2}solar cells with different Ga-contents grown in a three-stage-process on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wendt, Kristin; Mueller, Mathias; Hempel, Thomas; Bertram, Frank; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin for Materials and Energy (Germany)

    2011-07-01

    A fundamental advantage of Cu(In,Ga)Se{sub 2} (CIGS) alloys as absorber materials in thin-film solar cells is their direct band gap energies which can be varied between 1.04 eV (CuInSe{sub 2}) and 1.68 eV (CuGaSe{sub 2}). Photoluminescence (PL) spectra of complete CIGS solar cells with a systematic variation of the Ga-content in the absorber layer will be presented. The CIGS cells investigated were grown on a Mo back contact sputtered on soda lime glass and have a Ga-concentration ranging over the entire range from CuInSe{sub 2} to CuGaSe{sub 2}. Samples with Ga-contents between 100 % and 33 % show two broad luminescence bands. In contrast, CuInSe{sub 2} exhibits only one broad luminescence band. Each band is composed of two or three different transitions. Varying excitation density over four orders of magnitude results for samples with Ga-content of 0 % and 33 % in a blueshift of the main peak with increasing excitation density. For higher Ga-concentrations, first a blue- and then a redshift of the dominating peak with increasing excitation density is visible. The temperature dependence of the PL spectra is investigated going from 4 K to 300 K.

  12. Effect of Fertilizers and Irrigation on Distribution of Mobile Forms of Mn, Zn and Cu in Typical Chernozems of the Republic of Moldova

    Directory of Open Access Journals (Sweden)

    Leah T. Gh.

    2013-04-01

    Full Text Available The paper presents the study results of mobile forms of Mn, Zn and Cu in irrigated fertilized and unfertilized chernozems typical. Irrigation affects the content and distribution of mobile forms of trace elements, increasing their removal beyond the 150 cm of soil layer. The fertilization increase the migration of Cu until 130 cm, fixed Mn and Zn in 0-60 cm of the irrigated soils. During irrigation constitutes a danger of soil contamination with Mn, Cu and Zn.

  13. Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2007-07-01

    Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

  14. Structural and magnetic characterization of martensitic Ni-Mn-Ga thin films deposited on Mo foil

    International Nuclear Information System (INIS)

    Chernenko, V.A.; Anton, R. Lopez; Kohl, M.; Barandiaran, J.M.; Ohtsuka, M.; Orue, I.; Besseghini, S.

    2006-01-01

    Three martensitic Ni 51.4 Mn 28.3 Ga 20.3 thin films sputter-deposited on a Mo foil were investigated with regard to their crystal and magnetic domain structures, as well as their magnetic and magnetostrain properties. The film thicknesses, d, were 0.1, 0.4 and 1.0μm. X-ray and electron diffraction patterns revealed a tetragonal modulated martensitic phase (10M) in the films. The surface topography and micromagnetic structure were studied by scanning probe microscopy. A maze magnetic domain structure featuring a large out-of-plane magnetization component was found in all films. The domain width, δ, depends on the film thickness as δ∼d. The thickness dependencies of the saturation magnetization, saturation magnetic field and magnetic anisotropy were clarified. Beam cantilever tests on the Ni-Mn-Ga/Mo composite as a function of magnetic field showed reversible strains, which are larger than ordinary magnetostriction

  15. Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

    International Nuclear Information System (INIS)

    Tanaka, Katsu; Okamoto, Shinji

    2009-01-01

    This paper reports the first observation of red electroluminescence (EL) in SrGa 2 S 4 :Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa 2 S 4 :Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn 2+ ions to cause the red EL.

  16. Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

    Science.gov (United States)

    Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

    2018-03-01

    In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

  17. Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

    Science.gov (United States)

    Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

    2016-03-01

    The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  18. Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

    Directory of Open Access Journals (Sweden)

    Hailong eWang

    2016-03-01

    Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  19. Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

    Science.gov (United States)

    Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

    2007-09-01

    Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

  20. Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

    Science.gov (United States)

    Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

    2017-10-01

    We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

  1. Optics of the CuGaSe{sub 2} solar cell for highly efficient tandem concepts; Optik der CuGaSe{sub 2}-Solarzelle fuer hocheffiziente Tandemkonzepte

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martina

    2010-01-25

    A principle aim of solar cell research lies in optimizing the exploitation of the incident solar light. Yet, for single junction solar cells there exists an efficiency limit as described by Shockley and Queisser. The only concept realized so far to overcome this threshold is - apart from concentration - the multijunction solar cell. However, any kind of multijunction design poses new challenges: The upper wide-gap solar cell (top cell) needs to show efficient light absorption in the short-wavelength region. At the same time sufficient transmission for long-wavelength light is required which then needs to be absorbed effectively by the low-gap bottom cell. In tandem solar cells a proper light management in top and bottom solar cell is of great importance. This work focuses on chalcopyrite-based tandem solar cells. For the wide-bandgap IR-transparent ZnO:Al/i-ZnO/CdS/CuGaSe{sub 2}/SnO{sub 2}:F/glass solar cell an optical model has been established. Starting from modeling each of the individual layers building the stack the optical behavior of the complete thin film system of the top cell could be described. Carefully selected layer combinations and comparison of experimental and calculated data allowed for the attribution of transmission losses to the distinct material properties. Defects in the absorber are of crucial importance but also free carrier absorption in the window and in the transparent back contact contribute significantly to optical losses. The quantification of the losses was achieved by calculating the effects of reduced top cell transmission on the photo current of a simplified bottom cell. An extension of the optical model allowed to calculate the effective absorption in the individual layers and to determine reflection losses at the interfaces. From these results an optimized top cell stack was derived which is characterized by A) simulation of the monolithic integration, B) reduced layer thicknesses wherever possible from the electrical point of

  2. Fluorescence enhancing under UV-NIR simultaneous-excitation in ZnS:Cu,Mn phosphors

    Directory of Open Access Journals (Sweden)

    L. J. Xie

    2012-12-01

    Full Text Available The fluorescence properties of a long-lasting phosphor, ZnS:Cu,Mn was studied for the first time under simultaneously excitation of both UV and NIR light. Up to 20% fluorescence enhancement of the phosphor was observed. In the present simultaneously-excitation process, broad-band NIR light was absorbed and converted to visible photons via a single-photon upconversion path. We propose that a novel kind of spectral-conversion material with the unique ability to simultaneously convert both UV and NIR photons can be developed and is promising in the application of enhancing the EQE of solar cells.

  3. Pressure-induced electrical and magnetic property changes in CaCuMn6O12

    International Nuclear Information System (INIS)

    Zhang, W.; Yao, L.D.; Yang, L.X.; Li, F.Y.; Liu, Z.X.; Jin, C.Q.; Yu, R.C.

    2006-01-01

    CaCuMn 6 O 12 was prepared by using a traditional solid-state reaction method. It is a highly correlated electron system with a small gap appearing at E F and cluster glass state at low temperature, whereas temperature dependence of resistivity suggests that it is related to thermally activated nearest-neighbor hopping in paramagnetism state in higher temperature range. The resistivity decreases with increasing pressure until 11 kbar, and then increases with further increasing pressure. The blocking temperature T b goes down under pressure, indicating the suppression of cluster glass state under pressure

  4. Point defects as a test ground for the local density approximation +U theory: Mn, Fe, and V{sub Ga} in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Volnianska, O.; Zakrzewski, T. [Institute of Physics PAS, 02-668 Warsaw (Poland); Boguslawski, P. [Institute of Physics PAS, 02-668 Warsaw (Poland); Institute of Physics, Kazimierz Wielki University, 85-072 Bydgoszcz (Poland)

    2014-09-21

    Electronic structure of the Mn and Fe ions and of the gallium vacancy V{sub Ga} in GaN was analysed within the GGA + U approach. First, the +U term was treated as a free parameter, and applied to p(N), d(Mn), and d(Fe). The band gap of GaN is reproduced for U(N) ≈ 4 eV. The electronic structure of defect states was found to be more sensitive to the value of U than that of the bulk states. Both the magnitude and the sign of the U-induced energy shifts of levels depend on occupancies, and thus on the defect charge state. The energy shifts also depend on the hybridization between defect and host states, and thus are different for different level symmetries. In the case of V{sub Ga}, these effects lead to stabilization of spin polarization and the “negative-U{sub eff}” behavior. The values of Us were also calculated using the linear response approach, which gives U(Fe) ≈ U(Mn) ≈ 4 eV. This reproduces well the results of previous hybrid functionals calculations. However, the best agreement with the experimental data is obtained for vanishing or even negative U(Fe) and U(Mn)

  5. Studies on Electronic Structure and Magnetic Properties of an Organic Magnet with Metallic Mn2+ and Cu2+ Ions

    Science.gov (United States)

    Yao, Jian-Guo; Peng, Guang-Xiong

    2004-11-01

    The electronic structure and the magnetic properties of the non-pure organic ferromagnetic compound MnCu(pbaOH)(H2O)3 with pbaOH = 2-hydroxy-1, 3-propylenebis (oxamato) are studied by using the density-functional theory with local-spin-density approximation. The density of states, total energy, and the spin magnetic moment are calculated. The calculations reveal that the compound MnCu(pbaOH)(H20)3 has a stable metal-ferromagnetic ground state, and the spin magnetic moment per molecule is 2.208 μB, and the spin magnetic moment is mainly from Mn ion and Cu ion. An antiferromagnetic order is expected and the antiferromagnetic exchange interaction of d-electrons of Cu and Mn passes through the antiferromagnetic interaction between the adjacent C, O, and N atoms along the path linking the atoms Cu and Mn. The project supported by National Natural Science Foundation of China under Grant No. 10375074 and Hubei Automotive Industries Institute Foundation under Grant No. QY2002-16

  6. Development of half metallicity within mixed magnetic phase of Cu1‑x Co x MnSb alloy

    Science.gov (United States)

    Bandyopadhyay, Abhisek; Neogi, Swarup Kumar; Paul, Atanu; Meneghini, Carlo; Bandyopadhyay, Sudipta; Dasgupta, Indra; Ray, Sugata

    2018-05-01

    Cubic half-Heusler Cu1‑x Co x MnSb () compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic antiferromagnetism. The systems (Cu,Co)MnSb are of particular interest as the end member alloys CuMnSb and CoMnSb are semi metallic (SM) antiferromagnetic (AFM) and half metallic (HM) ferromagnetic (FM), respectively. Clearly, Co-doping at the Cu-site of CuMnSb introduces changes in the carrier concentration at the Fermi level that may lead to half metallic ground state but there remains a persistent controversy whether the AFM to FM transition occurs simultaneously. Our experimental results reveal that the AFM to FM magnetic transition occurs through a percolation mechanism where Co-substitution gradually suppresses the AFM phase and forces FM polarization around every dopant cobalt. As a result a mixed magnetic phase is realized within this composition range while a nearly HM band structure is developed already at the 10% Co-doping. Absence of T 2 dependence in the resistivity variation at low T-region serves as an indirect proof of opening up an energy gap at the Fermi surface in one of the spin channels. This is further corroborated by the ab initio electronic structure calculations that suggests that a nearly ferromagnetic half-metallic ground state is stabilized by Sb-p holes produced upon Co doping.

  7. Magnetic properties of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yao, Jinlei [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009 (China); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

    2015-12-15

    Magnetic properties and magnetocaloric effect of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds have been investigated. Magnetic measurements of RNi{sub 3}TSi display the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Graphical abstract: Magnetic measurements of RNi{sub 3}TSi show the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of 'RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi'. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Highlights: • CaCu{sub 5}-type RNi{sub 3}TSi show ferromagnetic ordering (R=Gd, Tb, T=Mn–Co, Cu). • Curie point increases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • MCE decreases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. • The coercive field of TbNi{sub 3}MnSi and TbNi{sub 3}FeSi reach 13 kOe and 16 kOe at 5 K.

  8. First-principles calculations of the electronic, vibrational, and elastic properties of the magnetic laminate Mn2GaC

    International Nuclear Information System (INIS)

    Thore, A.; Dahlqvist, M.; Alling, B.; Rosén, J.

    2014-01-01

    In this paper, we report the by first-principles predicted properties of the recently discovered magnetic MAX phase Mn 2 GaC. The electronic band structure and vibrational dispersion relation, as well as the electronic and vibrational density of states, have been calculated. The band structure close to the Fermi level indicates anisotropy with respect to electrical conductivity, while the distribution of the electronic and vibrational states for both Mn and Ga depend on the chosen relative orientation of the Mn spins across the Ga sheets in the Mn–Ga–Mn trilayers. In addition, the elastic properties have been calculated, and from the five elastic constants, the Voigt bulk modulus is determined to be 157 GPa, the Voigt shear modulus 93 GPa, and the Young's modulus 233 GPa. Furthermore, Mn 2 GaC is found relatively elastically isotropic, with a compression anisotropy factor of 0.97, and shear anisotropy factors of 0.9 and 1, respectively. The Poisson's ratio is 0.25. Evaluated elastic properties are compared to theoretical and experimental results for M 2 AC phases where M = Ti, V, Cr, Zr, Nb, Ta, and A = Al, S, Ge, In, Sn.

  9. Local structure in (MnS)2x(CuInS2)1-x alloys

    International Nuclear Information System (INIS)

    Pietnoczka, A.; Bacewicz, R.; Schorr, S.

    2006-01-01

    Local structure around Mn atoms in (MnS) 2x (CuInS 2 ) 1-x alloys for x≤0.09 has been determined using near-edge and extended X-ray absorption fine structure (XANES and EXAFS) measured at the Mn K-edge. We found that for the Mn concentration up to 9 at% Mn atoms substitute preferentially for indium in the chalcopyrite lattice. The Mn-S bond length is 2.43±0.015 Aa, and is about 2% shorter than the In-S bond length. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  10. Fine scale remobilisation of Fe, Mn, Co, Ni, Cu and Cd in contaminated marine sediment

    DEFF Research Database (Denmark)

    Tankere-Muller, Sophie; Zhang, Hao; Davison, William

    2007-01-01

    to less than 0.3 μM. With both DET and DGT measurements, there were sharply defined maxima of Cu and Cd within 2 mm of the sediment water interface, consistent with their release from organic material as it is oxidised. There was a Co maximum about 5–8 mm lower than the Cu and Cd maxima, apparently...... coincidental with Mn mobilisation. While there were clear Ni maxima, their location appeared to vary from being coincident with Co to a few mm above the Co maxima. The remobilisation of metals could not be explained by the pH gradients in the near-surface sediments. As sulphate reduction rates were appreciable...

  11. Mechanical properties of Fe-Mn-Cu-Al alloy systems and optimization of their composition

    International Nuclear Information System (INIS)

    Tkachenko, I.F.; Baranov, A.A.

    1981-01-01

    Studied is the separate and combined effect of Cu and Al on mechanical properties of the Fe-Mn-Al-Cu system alloys using a simplex- lattice method of experiment planning. Heat treated specimens in the form of plates have been subjected to mechanical tests. It is shown that mechanical properties of studied alloys change sufficiently in the result of tempering in heterogeneous (α+γ) region. Studied alloys have the most favourable conbination of characteristics of strength, plasticity and impact strength after tempering at 630 deg C during 2 hours. Diagrams are obtained which characterizes dependence of mechanical properties of alloys on their composition. They permit to select optimum compositions of alloys with the necessary combination of strength, plasticity and impact strength [ru

  12. Stability of Cu(In,Ga)Se2 solar cells: A literature review

    NARCIS (Netherlands)

    Theelen, M.; Daume, F.

    2016-01-01

    As Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) technology matures to production on an industrial scale, its long-term stability becomes increasingly important: The electric yield and thus the revenue of a PV system depend on both the initial conversion efficiency as well as its development over time.

  13. Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

    2013-10-14

    L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

  14. Study of the structural and magnetic properties and gallium exchange phenomenon in a Mn-Ga alloy doped by Cr during the milling and annealing process

    Energy Technology Data Exchange (ETDEWEB)

    Fariba, Nazari; Mohsen, Hakimi, E-mail: hakimi.m@yazd.ac.ir; Hossein, Mokhtari; Mohsen, Khajeh Aminian

    2015-05-15

    The effect of milling and annealing process on Cr doped Mn{sub 3}Ga nanocrystallite has been investigated. Phase determination analysis shows that Ga turning to get out of Mn-Ga structure and tend to make bonding to Cr and form Cr{sub 3}Ga{sub 4} product during milling process. Annealing of the new phases lead to decomposition of Cr{sub 3}Ga{sub 4} and formation of a new Mn-Ga phase in reverse direction, in the other words diffusion of Ga atoms occurs from Cr{sub 3}Ga{sub 4} to Mn phase and α-Mn and Cr{sub 3}Ga{sub 4} change to Mn{sub 3}Ga{sub 2} and Cr phases. The variation of coersivity, magnetization and magnetic state of different samples was explained according to the crystallite size of the present phases and grain boundary effects. It was also confirmed that formation of Mn-Cr clusters plays an important role in increase of saturation magnetization.

  15. The synthetic evaluation of CuO-MnOx-modified pinecone biochar for simultaneous removal formaldehyde and elemental mercury from simulated flue gas.

    Science.gov (United States)

    Yi, Yaoyao; Li, Caiting; Zhao, Lingkui; Du, Xueyu; Gao, Lei; Chen, Jiaqiang; Zhai, Yunbo; Zeng, Guangming

    2018-02-01

    A series of low-cost Cu-Mn-mixed oxides supported on biochar (CuMn/HBC) synthesized by an impregnation method were applied to study the simultaneous removal of formaldehyde (HCHO) and elemental mercury (Hg 0 ) at 100-300° C from simulated flue gas. The metal loading value, Cu/Mn molar ratio, flue gas components, reaction mechanism, and interrelationship between HCHO removal and Hg 0 removal were also investigated. Results suggested that 12%CuMn/HBC showed the highest removal efficiency of HCHO and Hg 0 at 175° C corresponding to 89%and 83%, respectively. The addition of NO and SO 2 exhibited inhibitive influence on HCHO removal. For the removal of Hg 0 , NO showed slightly positive influence and SO 2 had an inhibitive effect. Meanwhile, O 2 had positive impact on the removal of HCHO and Hg 0 . The samples were characterized by SEM, XRD, BET, XPS, ICP-AES, FTIR, and H 2 -TPR. The sample characterization illustrated that CuMn/HBC possessed the high pore volume and specific surface area. The chemisorbed oxygen (O β ) and the lattice oxygen (O α ) which took part in the removal reaction largely existed in CuMn/HBC. What is more, MnO 2 and CuO (or Cu 2 O) were highly dispersed on the CuMn/HBC surface. The strong synergistic effect between Cu-Mn mixed oxides was critical to the removal reaction of HCHO and Hg 0 via the redox equilibrium of Mn 4+ + Cu + ↔ Mn 3+ + Cu 2+ .

  16. Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell

    Energy Technology Data Exchange (ETDEWEB)

    Karimov, Khasan Sanginovich; Saeed, Muhammad Tariq; Khalid, Fazal Ahmad [GIK Institute of Engineering Sciences and Technology, Top 23640, Swabi, Khyber Pakhtunkhwa (Pakistan); Karieva, Zioda Mirzoevna, E-mail: tariqchani@hotmail.com [Tajik Technical University, Rajabov St.10, Dushanbe, 734000 (Tajikistan)

    2011-07-15

    A thin film of copper phthalocyanine (CuPc), a p-type semiconductor, was deposited by thermal evaporation in vacuum on an n-type gallium arsenide (GaAs) single-crystal semiconductor substrate. Then semi-transparent Ag thin film was deposited onto the CuPc film also by thermal evaporation to fabricate the Ag/p-CuPc/n-GaAs/Ag cell. Photoconduction of the cell was measured in photoresistive and photodiode modes of operation. It was observed that with an increase in illumination, the photoresistance decreased in reverse bias while it increased in forward bias. The photocurrent was increased in reverse bias operation. In forward bias operation with an increase in illumination, the photocurrent showed a different behavior depending on the voltage applied. (semiconductor physics)

  17. Electronic structure, defect formation energy, and photovoltaic properties of wurtzite-derived CuGaO2

    Science.gov (United States)

    Okumura, H.; Sato, K.; Kakeshita, T.

    2018-04-01

    Wurtzite-derived CuGaO2 (β-CuGaO2) is a recently synthesized oxide and expected as a candidate material for photovoltaic solar cells. In this paper, we propose computational material design concerning β-CuGaO2 based on the first-principles calculations. We perform hybrid calculations by using the VASP code. It is predicted that β-CuGaO2 has a direct bandgap (Eg = 1.56 eV), which is nearly optimal for high efficiency solar cells. The calculated formation energy of Cu vacancy (VCu) is very small and can be negative depending on the Fermi level. This result reasonably explains the observed p-type conduction in this material. As for the n-type doping, Cd doping could be suitable; however, VCu formation needs to be repressed in order to realize n-type β-CuGaO2. It is also shown that halogen impurities are not suitable for n-type β-CuGaO2 because of their large formation energy. Band alignment between β-CuGaO2 and ZnO is predicted to be type-II, leading to a suggestion of photovoltaic device based on the heterojunction.

  18. Selective production of oxygenates from CO2 hydrogenation over mesoporous silica supported Cu-Ga nanocomposite catalyst

    KAUST Repository

    Huang, Kuo-Wei

    2017-11-23

    Carbon dioxide hydrogenation to oxygenates (methanol and dimethyl ether (DME)) was investigated over bifunctional supported copper catalysts promoted with gallium (Ga). Supported Cu-Ga nanocomposite catalysts were characterized by X-ray diffraction, transmission electron microscopy with energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and H2 temperature programmed reduction. In comparison with Cu-SBA-15 based catalysts, Ga promoted catalysts prepared by the urea deposition method (CuGa/SBA-15-UDP) was found active and selective for CO2 hydrogenation to oxygenates. The use of Ga as the promoter showed increased acidic sites as confirmed by the NH3-TPD, Pyridine-IR and 2,6-lutidine-IR studies. The favorable effect of Ga on CO2 conversion and selectivity to oxygenate may come from the strong interaction of Ga with silica, which is responsible for the enhanced metal surface area, formation of nanocomposite and metal dispersion. Notably, incorporation of Ga to Cu/SiO2 showed a several-fold higher rate for methanol formation (13.12 mol/gCu·sec) with a reasonable rate for the DME formation (2.15 mol/gCu·sec) as compared to those of Cu/SiO2 catalysts.

  19. Post-GOE redox insights from Mo isotopes, Ce anomalies, and Mn from the 2.24 Ga Kazput Formation

    Science.gov (United States)

    Thoby, M.; Konhauser, K.; Philippot, P.; Killingsworth, B.; Warchola, T.; Lalonde, S.

    2017-12-01

    Following the Great Oxidation event (GOE) defined from 2.45 to 2.2 Ga, an event marking the first appearance of widespread atmospheric oxygen, a combination of decreased Mn(II) supply from land and increased Mn(IV)-precipitation in the oceans should have resulted in lower concentrations of Mn in seawater. Nevertheless, it appears that some early Proterozoic marine sediments record high seawater Mn concentrations hundreds of millions of years after the GOE. Here we investigate a Mn excursion associated with marine carbonates and shales of the 2.31 Ga Kazput Formation. Samples were recovered from drill core collected during the Turee Creek Drilling Project (TCDP). Using molybdenum (Mo) isotope data coupled with cerium (Ce) anomalies, we define the redox condition of the Kazput depositional environment. Initial results show no Mo fractionation and few cerium anomalies in carbonates, pointing to an anoxic basin without Mn oxide precipitates. Additionally, XRF data on the shales indicates an association of Mn with calcium (Ca) suggesting an anoxic environment at the time of their deposition. Our results provide new insights into the nature and environment of the Turee Creek basin and the extent of oxygenation of surface waters after the GOE.

  20. Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2

    International Nuclear Information System (INIS)

    Werner, Juergen H.; Mattheis, Julian; Rau, Uwe

    2005-01-01

    Small-area Cu(In,Ga)Se 2 thin film solar cells have reached more than 19% efficiencies. Compared to other polycrystalline materials this efficiency value is remarkable. Nevertheless, the 19% for Cu(In,Ga)Se 2 range more than 6% (absolute) below the world's best single-crystalline Si cells and almost 14% below the upper theoretical limit of 33% for an ideal black body cell with infinitely large mobility and radiative recombination only. About 4% out of the 14% are of optical nature, additional 3% stem from the limited mobility/diffusion length and from band gap fluctuations with a standard deviation no. sigmano. g no. approxno. 50 meV due to spatial variations of composition and stoichiometry of the quaternary compound Cu(In,Ga)Se 2 . Thus, about 26% efficiency would be possible if there were only these band gap fluctuations. Additional, voltage-dependent electrostatic potential fluctuations push down the efficiency further to 19%: The polycrystalline Cu(In,Ga)Se 2 which is unavoidably structurally inhomogeneous due to dislocations, grain boundaries, point defects, etc. is also electrostatically inhomogeneous because of charged defects. Electrostatic potential fluctuations at the valence and conduction band edge may be not only responsible for a high saturation current density but also for the ideality factor in the current/voltage curve. The band gap and electrostatic potential fluctuations make the effective band gap which controls the intrinsic carrier density smaller than the average optical gap. The (zero bias) electrostatic potential fluctuations are here derived from the ideality factors of the current/voltage curve. The ideality factor reflects the voltage-induced electrostatic homogenization of the sample. For the world's best Cu(In,Ga)Se 2 cells with an ideality factor of n id =1.5, we estimate zero bias electrostatic potential fluctuations with a standard deviation no. sigmano. elec no. approxno. 140 meV

  1. Magnetic domains and twin microstructure of single crystal Ni-Mn-Ga exhibiting magnetic shape memory effect

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Kopecký, Vít; Fekete, Ladislav; Jurek, Karel; Kopeček, Jaromír; Straka, L.; Seiner, Hanuš

    2015-01-01

    Roč. 51, č. 11 (2015), s. 1-4, č. článku 2505304. ISSN 0018-9464 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:68378271 ; RVO:61388998 Keywords : magnetic domain * magnetic shape memory * NiMnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.277, year: 2015

  2. Tuning avalanche criticality: acoustic emission during the martensitic transformation of a compressed Ni-Mn-Ga single crystal

    Czech Academy of Sciences Publication Activity Database

    Niemann, R.; Baró, J.; Heczko, Oleg; Schultz, L.; Fähler, S.; Vives, E.; Mañosa, L.; Planes, A.

    2012-01-01

    Roč. 86, č. 21 (2012), "214101-1"-"214101-6" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP107/11/0391 Institutional research plan: CEZ:AV0Z10100520 Keywords : stress -induced martensitic transformation * Ni-Mn-Ga * magnetic shape memory alloy * ferromagnetic martensite * acoustic emission during transformation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012

  3. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magneticshape memory effect

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Drahokoupil, Jan; Straka, L.

    2015-01-01

    Roč. 117, č. 17 (2015), "17E703-1"-"17E703-4" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP107/11/0391 Institutional support: RVO:68378271 Keywords : field-induced strain * temperature-dependence * alloy * martensite * Ni 2 MnGa * anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

  4. Influence of Mn incorporation for Ni on the magnetocaloric properties of rapidly solidified off-stoichiometric NiMnGa ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Dey, Sushmita; Singh, Satnam; Roy, R.K.; Ghosh, M.; Mitra, A.; Panda, A.K., E-mail: akpanda@nmlindia.org

    2016-01-01

    The present investigation addresses the magnetocaloric behaviour in a series of Ni{sub 77−x}Mn{sub x}Ga{sub 23} (x=23, 24, 25, 27 and 29) rapidly solidified alloys prepared in the form of ribbons by melt spinning technique. The approach of the study is to identify the off-stoichiometric composition wherein room temperature magneto-structural transformation is achieved. The alloy chemistry was tailored through Mn incorporation for Ni such that the magnetic and structural transitions were at close proximity to achieve highest entropy value of ΔS equal to 8.51 J Kg{sup −1} K{sup −1} for #Mn{sub 24} ribbon measured at an applied field of 3 T. When such transitions are more staggered as in #Mn{sub 29} the entropy value of ribbon reduced to as low as 1.61 J Kg{sup −1} K{sup −1}. Near room temperature transformations in #Mn{sub 24} ribbon have been observed through calorimetric and thermomagnetic evaluation. Reverse martensitic transformation (martensite→autstenite) temperature indicates not only distinct change in the saturation flux density but also an inter-martensitic phase. Microstructural analysis of #Mn{sub 24} alloy ribbon revealed structural ordering with the existence of plate morphology evidenced for martensitic phase. - Highlights: • Magnetocaloric effect in a series of melt spun NiMnGa ribbon is addressed. • The alloy series revealed austenitic state as well as its presence with martensite. • The morphology of the ribbons has been shown and discussed through phase analysis. • Influence of magnetising field on entropy and relative cooling power is discussed. • Influence of intermartensitic state on magnetization plots have also been shown.

  5. Microstructure and mechanical properties of Al-Cu-Mg-Mn-Zr alloy with trace amounts of Ag

    International Nuclear Information System (INIS)

    Liu Xiaoyan; Pan Qinglin; Lu Congge; He Yunbin; Li Wenbin; Liang Wenjie

    2009-01-01

    The microstructure and mechanical properties of Al-Cu-Mg-(Ag)-Mn-Zr alloys were studied by means of tensile testing, optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that small additions of Ag to Al-Cu-Mg-Mn-Zr alloy can accelerate the hardening effect of the aged alloy and reduce the time to peak-aged. The mechanical properties can be improved both at room temperature and at elevated temperatures, which is attributed to the fine and uniform plate-like Ω precipitates. Meanwhile the ductility of the studied alloys remains at relatively high level. The major strengthening phases of the Ag-free alloy are θ' and less S', while that of Al-Cu-Mg-Mn-Zr alloy containing trace amounts of Ag are Ω and less θ'.

  6. [CoCuMnOx Photocatalyzed Oxidation of Multi-component VOCs and Kinetic Analysis].

    Science.gov (United States)

    Meng, Hai-long; Bo, Long-li; Liu, Jia-dong; Gao, Bo; Feng, Qi-qi; Tan, Na; Xie, Shuai

    2016-05-15

    Solar energy absorption coating CoCuMnOx was prepared by co-precipitation method and applied to photodegrade multi- component VOCs including toluene, ethyl acetate and acetone under visible light irradiation. The photocatalytic oxidation performance of toluene, ethyl acetate and acetone was analyzed and reaction kinetics of VOCs were investigated synchronously. The research indicated that removal rates of single-component toluene, ethyl acetate and acetone were 57%, 62% and 58% respectively under conditions of 400 mg · m⁻³ initial concentration, 120 mm illumination distance, 1 g/350 cm² dosage of CoCuMnOx and 6 h of irradiation time by 100 W tungsten halogen lamp. Due to the competition among different VOCs, removal efficiencies in three-component mixture were reduced by 5%-26% as compared with single VOC. Degradation processes of single-component VOC and three-component VOCs both fitted pseudo first order reaction kinetics, and kinetic constants of toluene, ethyl acetate and acetone were 0.002, 0.002 8 and 0.002 33 min⁻¹ respectively under single-component condition. Reaction rates of VOCs in three-component mixture were 0.49-0.88 times of single components.

  7. DETERMINATION OF Cu, Fe, Mn, Zn AND FREE FATTY ACIDS IN PEQUI OIL

    Directory of Open Access Journals (Sweden)

    Aparecida M. S. Mimura

    2016-06-01

    Full Text Available Pequi (Caryocar brasiliense Camb., a typical fruit of the Brazilian Cerrado, is an important source of micronutrients and fatty acids. In this work, a new approach for the acid digestion (using H2SO4, HNO3 and H2O2 of pequi oil samples and the determination of Cu, Fe, Zn and Mn by flame atomic absorption spectrometry (F AAS was employed. Capillary zone electrophoresis (CZE was used for free fatty acid (FFA determination after simple and fast extraction with heated ethanol. Good results regarding precision (RSD < 10%, in most cases, sensitivity and adequate LOD and LOQ values were obtained. The accuracy was evaluated using spike tests and the recoveries were from 97 to 107%. The analytes were investigated in four different pequi oil samples. Fe was the trace element with the highest concentration (from 1.99 to 10.3 mg/100 g, followed by Zn, Mn and Cu (1.15 to 3.19, 0.42 to 0.91 and 0.31 to 0.56 mg/100 g, respectively. The main FFA found were oleic acid and palmitic acid (1.61 to 10.7 and 0.82 to 2.69 g/100 g, respectively, while linoleic acid (0.50 g/100 g was detected in only one sample. The pequi oil chemical composition showed good characteristics to be used as a food additive, in cosmetic formulations and for traditional medicine.

  8. Slurry Erosion Behavior of Destabilized and Deep Cryogenically Treated Cr-Mn-Cu White Cast Irons

    Directory of Open Access Journals (Sweden)

    S. Gupta

    2016-12-01

    Full Text Available The effects of destabilization treatment and destabilization followed by cryogenic treatment have been evaluated on the microstructural evolution and sand-water slurry erosion behavior of Cr-Mn-Cu white cast irons. The phase transformations after the destabilization and cryotreatment have been characterized by bulk hardness measurement, optical and scanning electron microscopy, x-ray diffraction analysis. The static corrosion rate has been measured in tap water (with pH=7 and the erosion-corrosion behavior has been studied by slurry pot tester using sand-water slurry. The test results indicate that the cryogenic treatment has a significant effect in minimizing the as-cast retained austenite content and transforming into martensitic and bainitic matrix embedded with ultra-fine M7C3 alloy carbides. In contrast, by conventional destabilization treatment retained austenite in the matrix are not fully eliminated. The slurry erosive wear resistance has been compared with reference to destabilized and cryotreated high chromium iron samples which are commonly employed for such applications. The cryotreated Cr-Mn-Cu irons have exhibited a comparable erosive wear performance to those of high chromium irons. Higher hardness combined with improved corrosion resistance result in better slurry erosion resistance.

  9. Effect of Mn on microstructures and mechanical properties of Al-Mg-Si-Cu-Cr-V alloy

    Directory of Open Access Journals (Sweden)

    Zhao Zhihao

    2012-11-01

    Full Text Available In order to improve the performances of the Al-Mg-Si-Cu-Cr-V alloy, various amounts of Mn (0-0.9wt.% were added. The effect of this Mn on the microstructures and mechanical properties of Al-Mg-Si-Cu-Cr-V alloys in different states, especially after hot extrution and solid solution treatment, was systematically studied using scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, and mechanical tests at room temperature. The results show that 0.2wt.% Mn can both refine the as-cast microstructure of the alloy and strengthen the extrusion+T6 state alloy without damaging the plasticity badly due to the formation of Al15(FeMn3Si2 and Al15Mn3Si2 dispersoids. Compared with the extrusion+T6 state alloy without Mn addition, the ultimate tensile strength and yield strength of the alloy with 0.2wt.% Mn addition are increased from 416.9 MPa to 431.4 MPa, 360.8 MPa to 372 MPa, respectively. The elongation of the extrusion+T6 state alloy does not show obvious change when the Mn addition is less than 0.5wt.%, and for the alloy with 0.2wt.% Mn addition its elongation is still as high as 15.6%. However, when over 0.7wt.% Mn is added to the alloy, some coarse, stable and refractory AlVMn and Al(VMnSi phases form. These coarse phases can reduce the effect of Mn on the inhibition of re-crystallization; and they retain the angular morphology permanently after the subsequent deformation process and heat treatment. This damages the mechanical properties of the alloy.

  10. Synthesis and mechanical properties of conventionally cast icosahedral particle-reinforced Al-Mn(-Cu)-Be-Si alloys

    International Nuclear Information System (INIS)

    Fleury, E.; Chang, H.J.; Kim, D.H.; Kim, D.H.; Kim, W.T.

    2005-01-01

    The microstructure of the Al-Mn(-Cu)-Be-Si alloys analyzed by X-ray diffraction and TEM consisted of icosahedral (i) quasicrystal particles embedded in α Al matrix. The conjoint addition of Si and Be elements enabled the i-phase formation in diameter 10 mm specimens prepared by conventional casting technique. The size, volume fraction and stability of the i-phase were found to be dependent on the Mn content. The addition of 2 at.% Cu did not affect the formation and stability of the i-phase but contributed significantly to the enhancement of the mechanical properties. (orig.)

  11. Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Merida, D., E-mail: david.merida@ehu.es [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); García, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); BC Materials (Basque Centre for Materials, Application and Nanostructures), 48040 Leioa (Spain); Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Plazaola, F. [Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain)

    2014-06-09

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173 K show a vacancy concentration of 1100 ± 200 ppm. The vacancy migration and formation energies have been estimated to be 0.55 ± 0.05 eV and 0.90 ± 0.07 eV, respectively.

  12. Study of the phase transformations in Ni2MnGa by capacitance dilatometry

    International Nuclear Information System (INIS)

    Wu, X D; Finlayson, T R

    2007-01-01

    High precision capacitance dilatometry has been used to study the phase transformations in a Ni 2 MnGa single crystal. The results show that capacitance dilatometry is an effective method to study the phase transformations. The thermal strain accompanying the martensitic transformation was not reproducible, but became more reproducible with the application of external stress. The first-order character of the martensitic transformation was enhanced by external stress. The intermediate transformation temperature decreased with increasing external stress with a temperature coefficient of -2.40 K MPa -1 . The coefficient of thermal expansion was 1.7 x 10 -5 K -1 for the parent phase and 1.4 x 10 -5 K -1 for the intermediate phase

  13. Nanoscale mechanical surface properties of single crystalline martensitic Ni-Mn-Ga ferromagnetic shape memory alloys

    International Nuclear Information System (INIS)

    Jakob, A M; Müller, M; Rauschenbach, B; Mayr, S G

    2012-01-01

    Located beyond the resolution limit of nanoindentation, contact resonance atomic force microscopy (CR-AFM) is employed for nano-mechanical surface characterization of single crystalline 14M modulated martensitic Ni-Mn-Ga (NMG) thin films grown by magnetron sputter deposition on (001) MgO substrates. Comparing experimental indentation moduli-obtained with CR-AFM-with theoretical predictions based on density functional theory (DFT) indicates the central role of pseudo plasticity and inter-martensitic phase transitions. Spatially highly resolved mechanical imaging enables the visualization of twin boundaries and allows for the assessment of their impact on mechanical behavior at the nanoscale. The CR-AFM technique is also briefly reviewed. Its advantages and drawbacks are carefully addressed. (paper)

  14. Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires

    Directory of Open Access Journals (Sweden)

    Phillip M. Wu

    2012-01-01

    Full Text Available Nanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conductance measurements for transport characterization of Ga0.95Mn0.05As nanowires over a broad temperature range. We determine the carrier type (holes and concentration and find a sharp increase of the thermopower below temperatures of 120 K that can be qualitatively described by a hopping conduction model. However, the unusually large thermopower suggests that additional mechanisms must be considered as well.

  15. Ab initio study of Ni2MnGa under shear deformation

    Directory of Open Access Journals (Sweden)

    Zelený Martin

    2015-01-01

    Full Text Available The effect of shear deformation on Ni2MnGa magnetic shape memory alloy has been investigated using ab initio electronic structure calculations. We used the projector-augmented wave method for the calculations of total energies and stresses as functions of applied affine shear deformation. The studied nonmodulated martensite (NM phase exhibits a tetragonally distorted L21 structure with c/a > 1. A large strain corresponding to simple shears in {001}, {100} and {100} systems was applied to describe a full path between two equivalent NM lattices. We also studied {101} shear which is related to twining of NM phase. Twin reorientation in this system is possible, because applied positive shear results in path with significantly smaller energetic barrier than for negative shear and for shears in other studied systems. When the full relaxation of lattice parameters is allowed, the barriers further strongly decrease and the structures along the twinning path can be considered as orthorhombic.

  16. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com [Smart Materials Lab, Department of Physics, Thiagarajar College of Engineering, Madurai – 625 015 (India); Raja, M. Manivel [Defence Metallurgical Research Laboratory, Hyderabad – 500 058 (India); Pandi, R. Senthur [School of Advanced Sciences, VIT University, Vellore – 632 014 (India)

    2016-05-23

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

  17. Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

    DEFF Research Database (Denmark)

    Kovács, A.; Sadowski, J.; Kasama, Takeshi

    2013-01-01

    The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate...... in annealed GaMnAs layers doped with low Mn concentrations is proposed....

  18. Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

    Science.gov (United States)

    Wang, Cai-Feng; Hu, Bo

    2017-10-01

    ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

  19. General synthesis of hierarchical C/MOx@MnO2 (M=Mn, Cu, Co) composite nanofibers for high-performance supercapacitor electrodes.

    Science.gov (United States)

    Nie, Guangdi; Lu, Xiaofeng; Chi, Maoqiang; Gao, Mu; Wang, Ce

    2018-01-01

    Improving the conductivity and specific surface area of electrospun carbon nanofibers (CNFs) is beneficial to a rapid realization of their applications in energy storage field. Here, a series of one-dimensional C/MO x (M=Mn, Cu, Co) nanostructures are first prepared by a simple two-step process consisting of electrospinning and thermal treatment. The presence of low-valence MO x enhances the porosity and conductivity of nanocomposites to some extent through expanding graphitic domains or mixing metallic Cu into the CNF substrates. Next, the C/MO x frameworks are coated with MnO 2 nanosheets/nanowhiskers (C/MO x @MnO 2 ), during which process the low-valence MO x can partly reduce KMnO 4 so as to mitigate the consumption of CNFs. When used as active materials for supercapacitor electrodes, the obtained C/MO x @MnO 2 exhibit excellent electrochemical performances in comparison with the common CNFs@MnO 2 (CM) core-shell electrode due to the combination of desired functions of the individual components and the introduction of extra synergistic effect. It is believed that these results will provide an alternative way to further increase the capacitive properties of CNFs- or metal oxide-based nanomaterials and potentially stimulate the investigation on other kinds of C/MO x composite nanostructures for various applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  20. Effect of composition on the magnetic and elastic properties shape-memory Ni-Mn-Ga

    Science.gov (United States)

    Malla, Aayush; Dapino, Marcelo J.; Lograsso, Thomas A.; Schlagel, Deborah

    2003-08-01

    The growing interest in ferromagnetic shape-memory Ni-Mn-Ga for implementation in actuator applications originates from the fact that this class of materials exhibits large strains when driven by a magnetic field. Large bidirectional strains up to a theoretical 6% are produced in these materials by twin boundary motion as martensite variants rotate to align respectively parallel or perpendicular to applied magnetic fields or stresses. These strains represent a significant improvement over piezoelectric and magnetostrictive materials. In this paper, we report on experimental measurements conducted on Ni-Mn-Ga cylindrical rods subjected to uniaxial stresses and uniaxial magnetic fields which were applied collinearly along the magnetic easy axis direction of the rods. To this end, a test apparatus was developed which consists of a water-cooled solenoid actuator and a loading fixture. Despite the lack of a readily recognizable mechanism for reversible deformations, bidirectional strains as large as 4300 ppm (0.43%) were observed, or three times the saturation magnetostriction of Terfenol-D. This paper presents room-temperature data including magnetization hysteresis, strain versus field and peak strain versus stress curves collected over a range of stresses between 0-65 MPa. From the latter set of curves, blocking force values are estimated as those for which the strain is 1% of the maximum (zero-load) strain. The results illustrate the sensitivity of material behavior with respect to composition at different driving conditions and offer insight on the choice of material compositions at which maximum actuation performance is achieved.

  1. Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

    International Nuclear Information System (INIS)

    Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

    2006-01-01

    Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  2. Influence of structural transition on the electronic structures and physical properties of Ni2MnGa alloy films

    International Nuclear Information System (INIS)

    Kim, K. W.; Kudryavtsev, Y. V.; Rhee, J. Y.; Lee, N. N.; Lee, Y. P.

    2004-01-01

    Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K, while the disordered films exhibit characteristics of amorphous alloys. It was also found that the disordering in Ni 2 MnGa alloy films did not change to any appreciable magnetic ordering down to 4 K. Annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic, magneto-optical and transport properties of the ordered Ni 2 MnGa alloy films. It was also understood, for the first time, how the structural ordering in the films influences the physical properties, including the surprising loss of ferromagnetism in the disordered films, as a result of performing electronic-structure calculations.

  3. Microscopy modifications in an aged Cu-Al-Ni-Mn alloy; Modificacoes microestruturais em uma liga Cu-Al-Ni-Mn submetida ao envelhecimento

    Energy Technology Data Exchange (ETDEWEB)

    Gama, J.L.L. [Instituto Federal de Alagoas (IFAL), Maceio, AL (Brazil); Ferreira, R.A.S., E-mail: jorgelauriano@gmail.co [Universidade Federal de Pernambuco (DEM/UFPE), Recife, PE (Brazil). Dept. de Engenharia Mecanica

    2010-07-01

    An Cu-12Al-4Ni-3Mn shape memory alloy have been manufactured using an induction furnace of 24 KVA. After melting, chemical analyse was performed by X-ray fluorescence (XRF). The phase transformation of this alloy was studied in the different sequences produced during thermomechanic treatments. After homogenization, the ingot was solution treated at 850 deg C. At 750 deg C samples were submitted to a reduction by rolling to about 30% in thickness, followed by water quenching. In sequence, the ingot was cold-rolled at different thicknesses. In deformed state, sample of this alloy was submitted to the thermal analyse-DTA for identification of the phase transformation domains. For each identified domain, ageing was carried out, at different times, to evaluate the presence of the different phases. Samples were characterized ray-X diffraction. The results showed that the microstructural evolutions are of a complex nature. At 425 deg C temperature both recrystallization and precipitation of different phases were simultaneously observed. (author)

  4. Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

    Directory of Open Access Journals (Sweden)

    Udai P. Singh

    2010-01-01

    Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

  5. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  6. Structure of as cast L12 compounds in Al3Zr-base alloys containing Cu and Mn

    International Nuclear Information System (INIS)

    Virk, I.S.; Varin, R.A.

    1991-01-01

    It was first shown that the low symmetry, tetragonal DO 23 crystal structure of Al 3 Zr intermetallic can be changed to the related cubic L1 2 crystal structure by alloying with Ni (Al 5 NiZr 2 ) and Cu(Al 5 CuZr 2 ). It has been reported that previous work has successfully modified Al 3 Zr with Fe, Cu, Cr and Ni obtaining nearly single phase materials with L1 2 structure. However, they only studied the microstructure and mechanical properties of Fe - modified intermetallic (Al-6at% Fe-25at% Zr). The purpose of the paper is to describe and interpret experimental observations on the microstructure of Al 5 CuZr 2 and Al 66 Mn 9 Zr 25 (at.%) modifications of base Al 3 Zr intermetallic. The one modified with Mn has not been reported in literature although its Al 3 Ti - base counterpart has recently been successfully produced (3, 4)

  7. Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Seña, N.; Dussan, A. [Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá (Colombia); Mesa, F. [Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Universidad del Rosario, Bogotá (Colombia); Castaño, E.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia)

    2016-08-07

    We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the Mn{sub Ga} substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μ{sub B}/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.

  8. Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Calderón, Jorge A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas, Universidad del Rosario, Cra. 24 No. 63C-69, Bogotá (Colombia); Dussan, A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia)

    2017-02-28

    Highlights: • (GaMn)Sb thin films were fabricated using the direct current (DC) magnetron co-sputtering. • Presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases. • A minor difference of 1% was found with respect to percolation theory, which confirmed the validity of the diffusional model in semiconductor alloys with magnetic properties. • Increase in the localized states density (N{sub F}) with increasing substrate temperature. - Abstract: We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

  9. Structure and microstructure of Ni-Mn-Ga single crystal exhibiting magnetic shape memory effect analysed by high resolution X-ray diffraction

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Cejpek, P.; Drahokoupil, Jan; Holý, V.

    2016-01-01

    Roč. 115, Aug (2016), s. 250-258 ISSN 1359-6454 R&D Projects: GA ČR GA13-30397S; GA ČR GA15-00262S Institutional support: RVO:68378271 Keywords : magnetic field-induced strain * magnetic shape memory effect * X-ray diffraction * structure of Ni-Mn-Ga Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.301, year: 2016

  10. Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar

    2009-01-01

    Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10 14 to 5x10 16 cm -2 . Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V Ga O N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C

  11. Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: abdulmajid40@yahoo.com; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: akbar@qau.edu.pk

    2009-01-15

    Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10{sup 14} to 5x10{sup 16} cm{sup -2}. Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V{sub Ga}O{sub N} complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C.

  12. Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Kurdyukov, D. A., E-mail: kurd@gvg.ioffe.ru; Shishkin, I. I.; Grudinkin, S. A.; Sitnikova, A. A.; Zamoryanskaya, M. V.; Golubev, V. G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2015-05-15

    A film-type 3D-ordered macroporous GaN-ZnS:Mn nanocomposite with the structure of an inverted opal is fabricated. Structural studies of the nanocomposite are performed, and it is shown that GaN and ZnS:Mn introduced into the pores of the silica opal are nanocrystallites misoriented with respect to each other. It is shown that the nanocomposite is a structurally perfect 3D photonic crystal. The efficiency of using a buffer of GaN crystallites to preclude interaction between the surface of the spherical a-SiO{sub 2} particles forming the opal matrix and chemically active substances introduced into the pores is demonstrated.

  13. Immunoreactive Cu-SOD and Mn-SOD in lymphocytes sub-populations from normal and trisomy 21 subjects according to age

    International Nuclear Information System (INIS)

    Baeteman, M.A.; Baret, A.; Courtiere, A.; Rebuffel, P.; Mattei, J.F.

    1983-01-01

    Copper and manganese superoxide dismutases (Cu-SOD and Mn-SOD) were measured by radioimmunoassay in B and T lymphocytes and macrophages, in patients with trisomy 21 and in matched controls. In the controls, Cu-SOD was present in greater amounts than Mn-SOD and there were quantitative differences in the distribution in the three cellular sub-populations. In trisomy 21, levels of Cu-SOD were raised, with no change in levels of Mn-SOD, supporting the theory of a gene dosage effect. There were significant positive and negative correlations between age and Cu-SOD levels in controls, and a correlation approaching significance for Mn-SOD. In trisomy 21, there was no correlation between age and Cu-SOD levels, and the only significant correlation for Mn-SOD was for B lymphocytes

  14. Magnetic properties and EXAFS study of nanocrystalline Fe2Mn0.5Cu0.5Al synthesized using mechanical alloying technique

    International Nuclear Information System (INIS)

    Nanto, Dwi; Yang, Dong-Seok; Yu, Seong-Cho

    2014-01-01

    Nanocrystalline Fe 2 Mn 0.5 Cu 0.5 Al has been synthesized by the mechanical alloying technique and studied as a function of milling time. Alloy nature of Fe 2 Mn 0.5 Cu 0.5 Al was observed in a sample milled for 96 h. The magnetic saturation is 4.0 μ B /f.u., which coincidently follows Slater–Pauling rule at 5 K. Nanocrystalline Fe 2 Mn 0.5 Cu 0.5 Al has enhanced saturate magnetization compared to any other fabrication of Fe 2 MnAl reported. Cu element plays an important role in site competes with other elements and may result in the enhancement of saturate magnetization. In accordance to the magnetic results and EXAFS pattern, it was revealed that the dynamics of magnetic properties were confirmed as structural changes of nanocrystalline Fe 2 Mn 0.5 Cu 0.5 Al

  15. In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Weidong [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Liu, Mingling [Department of Mechanical and Electrical Engineering, Qinhuangdao Institute of Technology, Qinhuangdao 066100 (China); Wu, Zhaojun [Department of Practice Teaching and Equipment Management, Qiqihar University, Qiqihar 161006 (China); Xing, Xueqing; Mo, Guang; Wu, Zhonghua [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Liu, Hong, E-mail: lhong68@sina.com.cn [School of Biomedical Engineering, Capital Medical University, Beijing 100069 (China)

    2015-11-01

    Liquid Ga could be used as a flexible heat-transfer medium or contact medium in the synchrotron-radiation-based instruments. The chemical stability of liquid Ga on other metal surface determines the serviceability of liquid Ga. In this paper, the oxidation evolutions of liquid Ga on Ni and Cu substrates have been investigated by in-situ grazing incidence small angle X-ray scattering (GISAXS) as a function of substrate temperature. The liquid Ga on Ni and Cu substrates shows different oxidation behaviors. A successive and slower oxidation from oxide clusters to oxide layer takes place with temperature increasing from 25 to 190 °C on the surface of the Ga/Ni/Si specimen, but a quick oxidation occurs on the entire surface of the Ga/Cu/Si specimen at the initial 25 °C. The subsequent heating increases the surface roughness of both liquid Ga, but increases simultaneously the surface curvature of the Ga/Cu/Si specimen. The understanding of the substrate-dependent oxidation behavior of liquid Ga is beneficial to its application as a heat-transfer medium.

  16. Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux

    International Nuclear Information System (INIS)

    Han, Y; Fay, M W; Novikov, S V; Edmonds, K W; Gallagher, B L; Campion, R P; Staddon, C R; Foxon, C T; Brown, P D

    2006-01-01

    Zinc-blende Ga 1-x Mn x N epilayers grown by plasma assisted molecular beam epitaxy as a function of Mn flux have been assessed using a variety of structural characterisation techniques. Increasing Mn flux is associated with the build up of a Mn surfactant layer during the early states of growth and a transition from zinc-blende single phase growth to zincblende/ wurtzite mixed phase growth

  17. Preparation and layer-by-layer solution deposition of Cu(In,GaO2 nanoparticles with conversion to Cu(In,GaS2 films.

    Directory of Open Access Journals (Sweden)

    Walter J Dressick

    Full Text Available We present a method of Cu(In,GaS2 (CIGS thin film formation via conversion of layer-by-layer (LbL assembled Cu-In-Ga oxide (CIGO nanoparticles and polyelectrolytes. CIGO nanoparticles were created via a novel flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH, and dispersed in aqueous solution. Multilayer films were assembled by alternately dipping quartz, Si, and/or Mo substrates into a solution of either polydopamine (PDA or polystyrenesulfonate (PSS and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. PSS/CIGO-PAH films were found to be inadequate due to weak adhesion to the Si and Mo substrates, excessive particle diffusion during sulfurization, and mechanical softness ill-suited to further processing. PDA/CIGO-PAH films, in contrast, were more mechanically robust and more tolerant of high temperature processing. After LbL deposition, films were oxidized to remove polymer and sulfurized at high temperature under flowing hydrogen sulfide to convert CIGO to CIGS. Complete film conversion from the oxide to the sulfide is confirmed by X-ray diffraction characterization.

  18. Investigation of defects in Cu(In,Ga)S{sub 2} and Cu(In,Ga)Se{sub 2} solar cells by space charge spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Riediger, Julia; Ohland, Joerg; Knipper, Martin; Parisi, Juergen; Riedel, Ingo [Thin Film Photovoltaics, Energy- and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany); Meeder, Alexander [Soltecture GmbH, 12487 Berlin (Germany)

    2012-07-01

    If deep defect states in the absorber of a solar cell act as recombination centers, they may limit the carrier lifetime and thus the open circuit voltage. This is related to the defect's activation energy and spatial position. In this study the defect landscape of chalcopyrite thin film solar cells with varied absorber composition was investigated by space charge spectroscopy. The absorber layer in Cu(In,Ga)S{sub 2} samples arises from rapid thermal process (RTP) in sulfur vapor while Cu(In,Ga)Se{sub 2} absorbers were processed via co-evaporation of the constituents. Several defect states were found by deep level spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). With the knowledge of the defect activation energies we derived the spatial defect concentrations from (illuminated) capacitance-voltage (CV) measurements and discuss the results for both material systems. To identify the often discussed ''N1'' defect, the measurements were repeated after annealing and changes in the defect spectra were evaluated.

  19. Teores de Fe, Mn, Zn, Cu, Ni E Co em solos de referência de Pernambuco Concentrations of Fe, Mn, Zn, Cu, Ni and Co in benchmark soils of Pernambuco, Brazil

    Directory of Open Access Journals (Sweden)

    Caroline Miranda Biondi

    2011-06-01

    Full Text Available Metais pesados formam um grupo de elementos com particularidades relevantes e de ocorrência natural no ambiente, como elementos acessórios na constituição de rochas. Esses elementos, apesar de associados à toxidez, exigem tratamento diferenciado em relação aos xenobióticos, uma vez que diversos metais possuem essencialidade (Fe, Mn, Cu, Zn e Ni e benefício (Co comprovados para as plantas. Nesse contexto, o objetivo deste trabalho foi determinar os teores naturais dos metais Fe, Mn, Zn, Ni, Cu e Co nos solos de referência de Pernambuco. Foram coletadas amostras de solo nas três regiões fisiográficas (Zona da Mata, Agreste e Sertão, dos dois primeiros horizontes dos 35 solos de referência do Estado de Pernambuco. A digestão das amostras baseou-se no método 3051A (USEPA, 1998, e a determinação foi efetuada em ICP-OES. Correlações significativas foram estabelecidas entre os metais e entre estes e a fração argila do solo, em ambos os horizontes, indicando a associação comum da maioria dos metais com solos mais argilosos. A maioria dos solos apresentou teores de Fe, Mn, Zn, Cu, Ni e Co menores que os de solos de outras regiões do País, com litologia mais máfica, o que corrobora o fato de que os teores desses elementos são mais diretamente relacionados aos minerais Fe-magnesianos. Os resultados indicam baixo potencial dos solos de Pernambuco em liberar Cu, Co e Ni para plantas, enquanto deficiências de Zn, Fe e Mn são menos prováveis. Os teores naturais de Fe, Mn, Zn, Cu, Ni e Co determinados podem ser utilizados como base para definição dos Valores de Referência de Qualidade para os solos de Pernambuco, de acordo com o preconizado pela legislação nacional.Heavy metals are a group of elements with specific features and natural occurrence in the environment, representing an accessory in the formation of rocks. These elements, although associated with toxicity, must be treated different from xenobiotics, since many

  20. Local structure analysis of Cu(In,Ga)Se{sub 2} by X-ray fluorescence holography

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho; Kitamura, Yuma [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Happo, Naohisa [Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194 (Japan); Hosokawa, Shinya [Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan); Hayashi, Kouichi [Faculty of Engineering, Nagoya Institute of technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555 (Japan)

    2017-06-15

    X-ray Fluorescence Holography (XFH) study of Cu(In,Ga)Se{sub 2} single crystals has been performed using an inverse mode. Energies of incident X-ray are from 9.2 to 13.2 keV. The Cu-Kα X-ray fluorescence hologram has been constructed, and atomic images were reconstructed using Barton's algorithm. Dependence of fluorescent X-ray, either Cu or Ga, on the reconstructed atomic images of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was examined. The atomic image of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was compared with that of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2}. The reconstructed atomic images of the cation (Cu, Ga, and In) plane and that of the anion (Se) plane are discussed in terms of the alloy composition. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Thermal and galvanomagnetic properties of monocrystals CuInGa{sub 2}Te{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Abilov, Ch. I., E-mail: cabilov@yahoo.com; Hasanova, M. Sh., E-mail: mhsh28@mail.ru; Huseynova, N. T. [Azerbaijan Technical University, Baku (Azerbaijan); Zeynalov, S. A. [Azerbaijan Institute of Teachers, Baku (Azerbaijan)

    2016-03-25

    By the methods of the physic-chemical analysis, determination of density and by measurement of micro hardness the character of chemical interaction in the In{sub 2}Te{sub 3}-Cu{sub 2}Ga{sub 4}Te{sub 7} system has been investigated and its faze diagram has been plotted. It is established that the system is quasibinary, of eutectic type. In the system the chemical combination of CuGa{sub 2}InTe{sub 5} composition melting congruently at 855°C is generated. There have been revealed solid solutions boundary of which based on In{sub 2}Te{sub 3} reach 5mol% at room temperatures. Temperature dependences of electric conductivity, the coefficient of thermo-emf, general heat conductivity, the Hall mobility of charge carriers.The mechanisms of electron-phonon diffusion in crystals of its compound have been revealed.

  2. Properties of dislocations in Cu(In,Ga)Se2 film and their formation during growth

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Jens; Boit, Christian [Technische Universitaet Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Niermann, Tore; Lehmann, Michael [Technische Universitaet Berlin, Institute of Optics and Atomic Physics, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2012-07-01

    Transmission electron microscopy (TEM) studies were performed on Cu(In,Ga)Se2 (CIGSe) thin films for solar cells with a special focus on dislocations. A sample series of glass/Mo/CIGSe stacks with varying [Cu]/([Ga]+[In]) ratio were prepared by interrupting the growth processes at several stages. TEM imaging and elemental distribution maps by energy-dispersive X-ray spectroscopy gave structural and compositional information at certain film growth states. Furthermore, high resolution TEM imaging was used to confirm a structural model of dislocations in complete CIGSe solar cells and by means of in-line electron holography we examined changes in the mean inner potential. A decrease of the mean inner potential at the position of the dislocations was observed. This might be attributed to a change of the atomic density due to the dislocation, a local segregation or a charge at the dislocation core.

  3. Magnetic Susceptibility of liquid Gd-NM (NM = Cu, Ga, Ge alloys

    Directory of Open Access Journals (Sweden)

    Shimakura Hironori

    2017-01-01

    Full Text Available For rare earth alloys, the indirect interaction of RKKY is at work between rare-earth atoms. Therefore, the magnetism of them depends on the number of conduction electrons and the distance between rare-earth metals. In this work, to reveal the relationship between the number of conduction electrons and magnetic property of rare earth metal alloys, magnetic susceptibility measurements for liquid Gd-NM (NM = Cu, Ga, Ge was performed by Faraday method. As the results, it was observed that the sign of paramagnetic Curie temperature of Cu-Gd alloys are positive at all composition, while Ga-Gd and Ge-Gd alloys show negative paramagnetic Curie temperature at certain composition. Moreover, it was indicated when the alloy at certain composition shows highest melting temperature, it has the lowest paramagnetic Curie temperature.

  4. Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ajimsha, R.S.; Das, Amit K.; Joshi, M.P.; Kukreja, L.M.

    2014-01-01

    Highlights: • Band offset studies at the interface of Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures were performed using X-ray photoelectron spectroscopy. • Valance band offsets (VBO) of these hetero-structures were obtained from respective XPS peak positions and VB spectra using Kraut's equation. • Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. • Schematic band alignment diagram for the interface of these hetero-structures has been constructed. • Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. - Abstract: We have studied the band offset and alignment of pulsed laser deposited Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures using photoelectron spectroscopy. Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures

  5. Designing a New Ni-Mn-Sn Ferromagnetic Shape Memory Alloy with Excellent Performance by Cu Addition

    Directory of Open Access Journals (Sweden)

    Kun Zhang

    2018-02-01

    Full Text Available Both magnetic-field-induced reverse martensitic transformation (MFIRMT and a high working temperature are crucial for the application of Ni-Mn-Sn magnetic shape memory alloys. Here, by first-principles calculations, we demonstrate that the substitution of Cu for Sn is effective not only in enhancing the MFIRMT but also in increasing martensitic transformation, which is advantageous for its application. Large magnetization difference (ΔM in Ni-Mn-Sn alloy is achieved by Cu doping, which arises from the enhancement of magnetization of austenite due to the change of Mn-Mn interaction from anti-ferromagnetism to ferromagnetism. This directly leads to the enhancement of MFIRMT. Meanwhile, the martensitic transformation shifts to higher temperature, owing to the energy difference between the austenite L21 structure and the tetragonal martensite L10 structure increases by Cu doping. The results provide the theoretical data and the direction for developing a high temperature magnetic-field-induced shape memory alloy with large ΔM in the Ni-Mn-Sn Heusler alloy system.

  6. Crystal structure of the new diamond-like semiconductor CuMn2InSe4

    Indian Academy of Sciences (India)

    Abstract. The crystal structure of the semiconductor compound CuMn2InSe4 was analysed using X-ray powder ... properties arising from the presence of magnetic ions in the ... by SEM technique, using a Hitachi S2500 microscope equip-.

  7. Synthesis and characterisation of Cu(II), Ni(II), Mn(II), Zn(II) and VO(II ...

    Indian Academy of Sciences (India)

    Unknown

    Synthesis and characterisation of Cu(II), Ni(II), Mn(II), Zn(II) and VO(II) Schiff base complexes derived from o-phenylenediamine and acetoacetanilide. N RAMAN*, Y PITCHAIKANI RAJA and A KULANDAISAMY. Department of Chemistry, VHNSN College, Virudhunagar 626 001, India e-mail: ra_man@123india.com.

  8. Variability of Mn, Fe, Ni, Cu and Co in manganese nodules from the Central Indian Ocean Basin

    Digital Repository Service at National Institute of Oceanography (India)

    Jauhari, P.

    clays which contain higher Fe and Co. Clustering of analysed shows that Ni and Cu are geochemically associated with Mn, and Co with in both sediment types. However, the degree of correlation between all the elements is higher in the nodules from red clay...

  9. Electro-chemical development of CuInGaSe2-based photovoltaic solar cells

    Science.gov (United States)

    Tolan, Gavin James

    The aim of this work was to make low cost, high efficiency, graded bandgap, thin film CuInGaSe2 solar cells by electrodeposition, using novel device designs proposed by Dharmadasa et al. These new designs were first experimentally tested using well researched GaAs and AlxGa(1-x)As materials grown using MOCVD, these ideas were then transferred to electrodeposited CuInGaSe2.New designs of graded bandgap solar cells based on p-type window materials, using the well researched GaAs and AlxGa(1-x)As alloy system, have been experimentally tested. The size of the cell was gradually scaled up from 0.5 mm diameter (0.002 cm2) to 3x3 mm2 (0.090 cm2) and to 5x5 mm2 (0.250 cm2), these were then assessed using I-V and QE techniques. The devices showed Voc in the range of 1070-1175 mV, exceeding reported values, FF in the range 0.80-0.87, and Jsc in the range 11-12 mA cm-2. The reason for the low current density was believed to be due to the GaAs capping layer used in the device, which acted as a filter. To confirm this, a second set of devices was fabricated, replacing the GaAs cap with GaAlP, this increased the Jsc to 14 mA cm-2, Voc and FF remained the same.New PV device structures based on CuInGaSe2 starting from the front contact, instead of the conventional Mo back contact, have been grown by electrodeposition from aqueous solutions using a single bath. In order to investigate the effect of bath concentrations on the film properties, 3 different bath concentrations were used. PEC was used to determine the electrical conduction of these layers, and it was found that it was possible to grow p+, p, i, n, n+ layers by changing the deposition voltage. XRF was used to determine the stoichiometry of the corresponding layers, and XRD to investigate the bulk structure. The morphological properties were studied using AFM and SEM. A four-layer n-n-i-p solar cell structure was initially fabricated and I-V measurements were carried out to assess the devices. The devices were PV active

  10. Electrical resistivity of nanocrystals in Fe-Al-Ga-P-B-Si-Cu alloy

    International Nuclear Information System (INIS)

    Pekala, K.; Jaskiewicz, P.; Nowinski, J.L.; Pekala, M.

    2003-01-01

    In new supercooled Fe 74 Al 4 Ga 2 P 11 B 4 Si 4 Cu 1 alloy the 10 nm size α-Fe(Si) nanocrystals are precipitated. Thermal stability is analyzed by the electron transport and magnetization measurements. Temperature variation of electrical resistivity of nanocrystals is determined and discussed for alloys with different initial crystalline fraction. Possible mechanism inhibiting the grain growth is presented

  11. Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

    Science.gov (United States)

    Sancho-Juan, O.; Martínez-Criado, O.; Cantarero, A.; Garro, N.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.; Ploog, K.

    2011-05-01

    In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03Mn and Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, MnGa, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

  12. Investigation of lattice defects and compositional gradients in Cu(In,Ga)Se{sub 2} thin films for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Jens; Boit, Christian [Department of Semiconductor Devices, Berlin University of Technology, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} absorber layers used in thin-film solar cells exhibit, when grown in a multi-stage process, compositional gradients of gallium and indium, dependent on process parameters such as the Ga content. The high lateral resolution of transmission electron microscopy (TEM) imaging and energy-dispersive X-ray spectroscopy (EDX) allows the determination of lattice defects and the elemental concentrations at identical sample positions. Cross-sectional TEM samples of ZnO/CdS/Cu(In,Ga)Se{sub 2}/Mo/glass stacks were prepared with varying [Ga]/([In]+[Ga]) ratio in the absorber. The shape of the Ga distribution was measured by means of EDX and differs for the various [Ga]/([In]+[Ga]) ratios. Linear (dislocations) and planar defects (stacking faults, microtwins) were studied by means of TEM bright field and dark field images along the lengths of the Cu(In,Ga)Se{sub 2} layers. Strong Ga compositional gradients were found even within individual grains. It appears that these Ga gradients correlate with the occurrence of dislocation networks in large grains (diameter > 1 {mu}m). We assume that these dislocations compensate for lattice mismatch due to the change in composition in this area of the lattice.

  13. Mechanisms controlling Cu, Fe, Mn, and Co profiles in peat of the Filson Creek Fen, northeastern Minnesota

    Science.gov (United States)

    Walton-Day, K.; Filipek, L.H.; Papp, C.S.E.

    1990-01-01

    Filson Creek Fen, located in northeastern Minnesota, overlies a Cu-Ni sulfide deposit. A site in the fen was studied to evaluate the hydrogeochemical mechanisms governing the development of Fe, Mn, Co, and Cu profiles in the peat. At the study site, surface peat approximately 1 m thick is separated from the underlying mineralized bedrock by a 6-12 m thickness of lake and glaciofluvial sediments and till. Concentrations of Fe, Mn, Co, and Cu in peat and major elements in pore water delineate a shallow, relatively oxidized, Cu-rich zone overlying a deeper, reduced, Fe-, Mn-, and Co-rich zone within the peat. Sequential metal extractions from peat samples reveal that 40-55% of the Cu in the shallow zone is associated with organic material, whereas the remaining Cu is distributed between iron-oxide, sulfide, and residual fractions. Sixty to seventy percent of the Fe, Mn, and Co concentrated in the deeper zone occur in the residual phase. The metal profiles and associations probably result from non-steady-state input of metals and detritus into the fen during formation of the peat column. The enrichment of organic-associated Cu in the upper, oxidized zone represents a combination of Cu transported into the fen with detrital plant fragments and soluble Cu, derived from weathering of outcrop and subcrop of the mineral deposit, transported into the fen, and fixed onto organic matter in the peat. The variable stratigraphy of the peat indicates that weathering processes and surface vegetation have changed through time in the fen. The Fe, Mn, and Co maxima at the base of the peat are associated with a maximum in detrital matter content of the peat resulting from a transition between the underlying inorganic sedimentary environment to an organic sedimentary environment. The chemistry of sediments and ground water collected beneath the peat indicate that mobilization of metals from sulfide minerals in the buried mineral deposit or glacial deposits is minimal. Therefore, the

  14. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  15. Kinetic competitivity between ordering and solute segregation to dislocations in Cu-20% at. Mn

    International Nuclear Information System (INIS)

    Donoso, E.; Varschavsky, A.

    1997-01-01

    By using differential scanning calorimetry (DSC) energetic measurements associated with the different peaks displayed during linear heating of Cu-20% at. Mn were made, employing quenched and cold-worked materials. Unique to the situation observed in the quenched alloy in which disperse order is developed, in the deformed alloy such process is inhibited by the segregation of solute atoms to partial dislocations. An appropriate model for calculation the energy evolved during the pinning process was applied in order to determine the dislocation density from the exothermic peak designated as stage 4. The computed value, which is in excellent agreement with the one obtained from expressions governing the energy release accompanying recrystallization allows to verify together with microhardness measurements and kinetic analysis that the first observed thermal effect in the deformed materials effectively corresponds a solute segregation process. (Author) 35 refs

  16. Distributions of dissolved trace metals (Cd, Cu, Mn, Pb, Ag in the southeastern Atlantic and the Southern Ocean

    Directory of Open Access Journals (Sweden)

    M. Boye

    2012-08-01

    Full Text Available Comprehensive synoptic datasets (surface water down to 4000 m of dissolved cadmium (Cd, copper (Cu, manganese (Mn, lead (Pb and silver (Ag are presented along a section between 34° S and 57° S in the southeastern Atlantic Ocean and the Southern Ocean to the south off South Africa. The vertical distributions of Cu and Ag display nutrient-like profiles similar to silicic acid, and of Cd similar to phosphate. The distribution of Mn shows a subsurface maximum in the oxygen minimum zone, whereas Pb concentrations are rather invariable with depth. Dry deposition of aerosols is thought to be an important source of Pb to surface waters close to South Africa, and dry deposition and snowfall may have been significant sources of Cu and Mn at the higher latitudes. Furthermore, the advection of water masses enriched in trace metals following contact with continental margins appeared to be an important source of trace elements to the surface, intermediate and deep waters in the southeastern Atlantic Ocean and the Antarctic Circumpolar Current. Hydrothermal inputs may have formed a source of trace metals to the deep waters over the Bouvet Triple Junction ridge crest, as suggested by relatively enhanced dissolved Mn concentrations. The biological utilization of Cu and Ag was proportional to that of silicic acid across the section, suggesting that diatoms formed an important control over the removal of Cu and Ag from surface waters. However, uptake by dino- and nano-flagellates may have influenced the distribution of Cu and Ag in the surface waters of the subtropical Atlantic domain. Cadmium correlated strongly with phosphate (P, yielding lower Cd / P ratios in the subtropical surface waters where phosphate concentrations were below 0.95 μM. The greater depletion of Cd relative to P observed in the Weddell Gyre compared to the Antarctic Circumpolar Current could be due to increase Cd uptake induced by iron-limiting conditions in these high

  17. Anomalous superconducting spin-valve effect in NbN/FeN/Cu/FeN/FeMn multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Tae Jong; Kim, Dong Ho [Yeungnam University, Gyeongsan (Korea, Republic of)

    2017-09-15

    We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

  18. The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

    International Nuclear Information System (INIS)

    Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

    2006-01-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

  19. Surface topography and roughness of high-speed milled AlMn1Cu

    Science.gov (United States)

    Wang, Zhenhua; Yuan, Juntang; Yin, Zengbin; Hu, Xiaoqiu

    2016-10-01

    The aluminum alloy AlMn1Cu has been broadly applied for functional parts production because of its good properties. But few researches about the machining mechanism and the surface roughness were reported. The high-speed milling experiments are carried out in order to improve the machining quality and reveal the machining mechanism. The typical topography features of machined surface are observed by scan electron microscope(SEM). The results show that the milled surface topography is mainly characterized by the plastic shearing deformation surface and material piling zone. The material flows plastically along the end cutting edge of the flat-end milling tool and meanwhile is extruded by the end cutting edge, resulting in that materials partly adhere to the machined surface and form the material piling zone. As the depth of cut and the feed per tooth increase, the plastic flow of materials is strengthened and the machined surface becomes rougher. However, as the cutting speed increases, the plastic flow of materials is weakened and the milled surface becomes smoother. The cutting parameters (e.g. cutting speed, feed per tooth and depth of cut) influencing the surface roughness are analyzed. It can be concluded that the roughness of the machined surface formed by the end cutting edge is less than that by the cylindrical cutting edge when a cylindrical flat-end mill tool is used for milling. The proposed research provides the typical topography features of machined surface of the anti-rust aluminum alloy AlMn1Cu in high speed milling.

  20. Decay Spectroscopy of 76-79Cu, 79-81Zn, and 83-85Ga

    International Nuclear Information System (INIS)

    Gross, C.J.; Winger, J.A.; Ilyushkin, S.; Rykaczewski, K.P.; Liddick, S.N.; Darby, I.G.; Grzywacz, R.K.; Bingham, C.R.; Shapira, D.; Mazzocchi, C.; Padgett, S.; Rajabali, M.M.; Cartegni, L.; Zganjar, E.F.; Piechaczek, A.; Batchelder, J.C.; Hamilton, J.H.; Goodin, C.T.; Korgul, A.; Krolas, W.

    2009-01-01

    The β-decay properties of neutron-rich fission fragments of Cu, Zn, and Ga isotopes were studied at the Holifield Radioactive Ion Beam Facility. Beams of 75-79 Cu, 79-81 Zn, and 83-85 Ga were formed and delivered to two new end-stations at the facility. The Low-energy Radioactive Ion Beam Spectroscopy Station is a traditional on-line low energy (200 keV) beam line with 4 clover Ge detectors, two half-cylindrical plastic β-detectors, and a moving tape collector. In addition, many of the beams were accelerated to above 2 MeV/u and delivered to a micro-channel plate and transmission ion chamber located just in front of the same detector setup. In both cases, fine adjustment of an isobar separator was used to enhance the isotope of interest. Excited levels in the daughters and β-delayed neutron branching ratios were measured and used to confirm isotope identification. The decays from 79 Cu and 85 Ga were observed for the first time as was the 84 Ge 2 1 + level populated by β and βn decay channels

  1. Temperature dependence of twinning and magnetic stresses in Ni.sub.46./sub.Mn.sub.24./sub.Ga.sub.22./sub.Co.sub.4./sub.Cu.sub.4./sub. alloy with giant 12% magnetic field-induced strain

    Czech Academy of Sciences Publication Activity Database

    Sozinov, A.; Soroka, A.; Lanska, N.; Rameš, Michal; Straka, Ladislav; Ullakko, K.

    2017-01-01

    Roč. 131, Apr (2017), s. 33-36 ISSN 1359-6462 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : Heusler phases * ferromagnetic shape memory alloy * twinning * magnetic anisotropy * magnetic shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.747, year: 2016

  2. Synthesis, Magnetization, and Electrical Transport Properties of Mn3Zn0.9Cu0.1N

    Directory of Open Access Journals (Sweden)

    Y. Yin

    2013-01-01

    Full Text Available We synthesized Mn3Zn0.9Cu0.1N by solid state reaction, and magnetic as well as electrical transport properties were investigated. It is found that Mn3Zn0.9Cu0.1N exhibits a first-order antiferromagnetism (AFM to paramagnetic (PM transition with the Néel temperature TN ~163 K, and substitution of Cu for Zn would favor ferromagnetism (FM state and weaken AFM ground state, leading to a convex curvature character of M(T curve. With high external fields 10 kOe–50 kOe, magnetic transition remains a robust AFM-PM feature while FM phase is completely suppressed. Thermal hysteresis of M(T under 500 Oe is also suppressed when the magnetic field exceeds 10 kOe. Mn3Zn0.9Cu0.1N exhibits a good metallic behavior except for a slope change around TN, which is closely related to AFM-PM magnetic transition. Compared with the first differential of resistivity with respect to temperature for (dρ/dTMn3ZnN in transition temperature range, the absolute value of (dρ/dTMn3Zn0.9Cu0.1N is much lower which is close to zero.

  3. Thermodynamic description of the Al-Cu-Mg-Mn-Si quinary system and its application to solidification simulation

    International Nuclear Information System (INIS)

    Chang, Keke; Liu, Shuhong; Zhao, Dongdong; Du, Yong; Zhou, Liangcai; Chen, Li

    2011-01-01

    By means of the first-principles calculations, the enthalpy of formation for the quaternary phase in the Al-Cu-Mg-Si system was computed. A set of self-consistent thermodynamic parameters for the Al-Cu-Mg-Si and Al-Cu-Mn-Si systems was then obtained using CALPHAD approach taking into account the reliable experimental data and the first-principles calculations. The thermodynamic database for the Al-Cu-Mg-Mn-Si system was developed based on the constituent binary, ternary, and quaternary systems. Comprehensive comparisons between the calculated and measured phase diagrams and invariant reactions showed that the experimental information was satisfactorily accounted for by the present thermodynamic description. The obtained database was used to describe the solidification behavior of Al alloys B319.1 (90.2Al-6Si-3.5Cu-0.3Mg, in wt.%) and B319.1 + xMn (x = 0.5-2, in wt.%) under Gulliver-Scheil non-equilibrium condition. The reliability of the present thermodynamic database was also verified by the good agreement between calculation and experiment for Gulliver-Scheil non-equilibrium solidification.

  4. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Sinova, J.; MacDonald, A. H.; Champion, R.P.; Gallagher, B. L.; Jungwirth, Tomáš

    2007-01-01

    Roč. 75, č. 4 (2007), 045202/1-045202/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * electronic structure calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  5. Electron-spin dynamics in Mn-doped GaAs using time-resolved magneto-optical techniques

    Science.gov (United States)

    Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Zhukov, E. A.; Yakovlev, D. R.; Bayer, M.

    2009-08-01

    We study the electron-spin dynamics in p -type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin-relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin-relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

  6. Green luminescence from Cu-diffused LiGaO2 crystals

    International Nuclear Information System (INIS)

    Holston, M.S.; Ferguson, I.P.; Giles, N.C.; McClory, J.W.; Winarski, D.J.; Ji, Jianfeng; Selim, F.A.; Halliburton, L.E.

    2016-01-01

    An intense green luminescence is observed from single crystals of LiGaO 2 doped with copper. Czochralski-grown undoped crystals are wrapped in thin copper foil and then held at 900 °C for 1 h in a flowing nitrogen atmosphere. Large concentrations of Cu + ions enter the crystals during this process and occupy Li + sites. These copper-diffused crystals are characterized with optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), thermoluminescence (TL), and electron paramagnetic resonance (EPR). An optical absorption band peaking near 350 nm is assigned to the Cu + ions at Li + sites and represents an excitation from a 3d 10 ground state to a 3d 9 4s 1 excited state. A broad PL emission from these excited Cu + ions has a peak near 523 nm and the related PLE band has a peak near 356 nm (this PLE band links the emission to the optical absorption band). Illuminating a Cu-diffused crystal at room temperature with 325 nm laser light converts a portion of the Cu + ions to Cu 2+ ions. EPR spectra from these 3d 9 ions are easily seen at low temperatures and their angular dependence is used to determine the g matrix and the 63 Cu hyperfine matrix. Subsequent heating produces a TL peak near 122 °C with a maximum in its spectral dependence near 535 nm. Correlated EPR measurements show that this TL peak occurs when trapped electrons are thermally released from unintentionally present transition-metal ions (most likely Fe) and recombine with holes at the Cu 2+ ions.

  7. Green luminescence from Cu-diffused LiGaO{sub 2} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Holston, M.S.; Ferguson, I.P.; Giles, N.C.; McClory, J.W. [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433 (United States); Winarski, D.J.; Ji, Jianfeng; Selim, F.A. [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403 (United States); Halliburton, L.E., E-mail: Larry.Halliburton@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506 (United States)

    2016-02-15

    An intense green luminescence is observed from single crystals of LiGaO{sub 2} doped with copper. Czochralski-grown undoped crystals are wrapped in thin copper foil and then held at 900 °C for 1 h in a flowing nitrogen atmosphere. Large concentrations of Cu{sup +} ions enter the crystals during this process and occupy Li{sup +} sites. These copper-diffused crystals are characterized with optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), thermoluminescence (TL), and electron paramagnetic resonance (EPR). An optical absorption band peaking near 350 nm is assigned to the Cu{sup +} ions at Li{sup +} sites and represents an excitation from a 3d{sup 10} ground state to a 3d{sup 9}4s{sup 1} excited state. A broad PL emission from these excited Cu{sup +} ions has a peak near 523 nm and the related PLE band has a peak near 356 nm (this PLE band links the emission to the optical absorption band). Illuminating a Cu-diffused crystal at room temperature with 325 nm laser light converts a portion of the Cu{sup +} ions to Cu{sup 2+} ions. EPR spectra from these 3d{sup 9} ions are easily seen at low temperatures and their angular dependence is used to determine the g matrix and the {sup 63}Cu hyperfine matrix. Subsequent heating produces a TL peak near 122 °C with a maximum in its spectral dependence near 535 nm. Correlated EPR measurements show that this TL peak occurs when trapped electrons are thermally released from unintentionally present transition-metal ions (most likely Fe) and recombine with holes at the Cu{sup 2+} ions.

  8. Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Shima, K.; Shimizu, H.; Momose, T.; Shimogaki, Y. [Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tu, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China); Takamizawa, H.; Shimizu, Y.; Inoue, K.; Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

    2014-09-29

    We used atom probe tomography (APT) to study the use of a Cu(Mn) as a seed layer of Cu, and a Co(W) single-layer as reliable Cu diffusion barriers for future interconnects in ultra-large-scale integration. The use of Co(W) layer enhances adhesion of Cu to prevent electromigration and stress-induced voiding failures. The use of Cu(Mn) as seed layer may enhance the diffusion barrier performance of Co(W) by stuffing the Cu diffusion pass with Mn. APT was used to visualize the distribution of W and Mn in three dimensions with sub-nanometer resolution. W was found to segregate at the grain boundaries of Co, which prevents diffusion of Cu via the grain boundaries. Mn was found to diffuse from the Cu(Mn) layer to Co(W) layer and selectively segregate at the Co(W) grain boundaries with W, reinforcing the barrier properties of Co(W) layer. Hence, a Co(W) barrier coupled with a Cu(Mn) seed layer can form a sufficient diffusion barrier with film that is less than 2.0-nm-thick. The diffusion barrier behavior was preserved following a 1-h annealing at 400 °C. The underlayer of the Cu interconnects requires a large adhesion strength with the Cu, as well as low electrical resistivity. The use of Co(W) has previously been shown to satisfy these requirements, and addition of Mn is not expected to deteriorate these properties.

  9. Photocatalytic Conversion of Carbon Dioxide Using Zn–Cu–Ga Layered Double Hydroxides Assembled with Cu Phthalocyanine: Cu in Contact with Gaseous Reactant is Needed for Methanol Generation

    Directory of Open Access Journals (Sweden)

    Kawamura Shogo

    2015-09-01

    Full Text Available Photocatalytic conversion of CO2 into fuels is an attractive option in terms of both reducing the increased concentration of atmospheric CO2 as well as generating renewable hydrocarbon fuels. It is necessary to investigate good catalysts for CO2 conversion and to clarify the mechanism irradiated by natural light. Layered Double Hydroxides (LDH have been attracting attention for CO2 photoreduction with the expectation of sorption capacity for CO2 in the layered space and tunable semiconductor properties as a result of the choice of metal cations. This study first clarifies the effects of Cu doping to LDH comprising Zn and Al or Ga. Cu could be incorporated in the cationic layers of LDH as divalent metal cations and/or interlayer anions as Cu(OH42−. The formation rates of methanol and CO were optimized for [Zn1.5Cu1.5Ga(OH8]+2Cu(OH42−·mH2O at a total rate of 560 nmol h−1 gcat−1 irradiated by UV–visible light. Cu phthalocyanine tetrasulfonate hydrate (CuPcTs4− and silver were effective as promoters of LDH for CO2 photoreduction. Especially, the total formation rate using CuPcTs-[Zn3Ga(OH8]+2CO32−·mH2O irradiated by visible light was 73% of that irradiated by UV–visible light. The promotion was based on HOMO–LUMO excitation of CuPcTs4− by visible light. The LUMO was distributed on N atoms of pyrrole rings bound to central Cu2+ ions. The photogenerated electrons diffused to the Cu site would photoreduce CO2 progressively in a similar way to inlayer and interlayer Cu sites in the LDH in this study.

  10. Influence of band-gap grading on luminescence properties of Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Haarstrich, Jakob; Metzner, Heiner; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, Thorsten; Kaufmann, Christian A.; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Solar Energy Research, Institute for Technology, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Undisz, Andreas [Institute for Material Science and Technology, Metallic Materials, Friedrich-Schiller-University Jena, Loebdergraben 32, 07743 Jena (Germany)

    2011-07-01

    Cathodoluminescence (CL) has been measured on Cu(In,Ga)Se{sub 2} with Ga-grading as it is used in high-efficiency thin-film solar cells at 10 K in both cross-section and plain view configuration. In cross-section geometry, we show that the vertical profile of the emission energy represents the Ga-profile in the film and, thus, we are able to measure the band-gap grading present by means of CL methods. At the same time, we observe a strong drift of excited charge carriers towards the minimum of the band-gap which can be explained by the Ga-grading. It is shown by voltage-dependent CL, how these results directly influence the interpretation of luminescence spectra obtained on Ga-graded Cu(In,Ga)Se{sub 2} and, thus, they will have to be considered as a basis for all forthcoming investigations on this topic.

  11. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

    International Nuclear Information System (INIS)

    Liang, J.; Wang, J.; Cooley, B. J.; Rench, D. W.; Samarth, N.; Paul, A.; Dellas, N. S.; Mohney, S. E.; Engel-Herbert, R.

    2012-01-01

    We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization, and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

  12. Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1-xMn xN

    International Nuclear Information System (INIS)

    Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Fenwick, William E.; Senawiratne, Jayantha; Song, Qing; Summers, Christopher J.; Zhang, Z. John; Dietz, Nikolaus; Ferguson, Ian T.

    2006-01-01

    Recent theoretical work for Ga 1-x Mn x N predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga 1-x Mn x N is still controversial, as there are conflicting experimental reports owing to the disparity in crystalline quality and phase purity of Ga 1-x Mn x N produced by different methods. In this work, metal-organic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga 1-x Mn x N of varying thickness and manganese doping levels using Cp 2 Mn as the Mn source. Crystalline quality and phase purity were determined by high-resolution X-ray diffraction, indicating that no macroscopic second phases are formed. Atomic force microscopy revealed MOCVD-like step flow growth patterns and a mean surface roughness of 0.378 nm in optimally grown films, which is close to that from the as-grown template layer of 0.330 nm. No change in the growth mechanism and morphology with Mn incorporation is observed. A uniform Mn concentration in the epitaxial layers is confirmed by secondary ion mass spectroscopy. SQUID measurements showed an apparent room temperature ferromagnetic hysteresis with saturation magnetizations of over 2 μ B /Mn at x = 0.008, which decreases with increasing Mn incorporation. Upon high-temperature annealing, numerous changes are observed in these properties, including an increase in surface roughness due to surface decomposition and a large decrease in the magnetic signature. A similar decrease in the magnetic signature is observed upon co-doping with the shallow donor silicon during the growth process. These results demonstrate the critical importance of controlling the Fermi level relative to the Mn 2+/3+ acceptor level in Ga 1-x Mn x N in order to achieve strong ferromagnetism

  13. CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

    Science.gov (United States)

    Guardia, Pablo; Estradé, Sònia; Peiró, Francesca; Cabot, Andreu

    2018-01-01

    The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. PMID:29621198

  14. CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

    Directory of Open Access Journals (Sweden)

    Taisiia Berestok

    2018-04-01

    Full Text Available The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs. We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

  15. The Effect of Different Levels of Cu, Zn and Mn Nanoparticles in Hen Turkey Diet on the Activity of Aminopeptidases.

    Science.gov (United States)

    Jóźwik, Artur; Marchewka, Joanna; Strzałkowska, Nina; Horbańczuk, Jarosław Olav; Szumacher-Strabel, Małgorzata; Cieślak, Adam; Lipińska-Palka, Paulina; Józefiak, Damian; Kamińska, Agnieszka; Atanasov, Atanas G

    2018-05-11

    The aim of the study was to estimate the influence of the different levels of Cu, Zn, and Mn nanoparticles on the activity of aminopeptidases in turkey. An experiment was carried out on 144 turkey hen Hybrid Converter. The birds were divided into groups given standard- and nanoparticle-supplementation of different level of copper (Cu 20, 10, 2 mg/kg), zinc (Zn 100, 50, 10 ppm), and manganese (Mn 100, 50, 10 ppm), covering respectively 100%, 50%, and 10% of the physiological demands for those minerals in the diet. The activity of aminopeptidases (alanyl: AlaAP, leucyl: LeuAP and arginyl: ArgAP) after supplementation of minerals was determined in the breast and thigh turkey muscle. The strongest effect of interaction among minerals supplementation form and dose on the activity levels of the aminopeptidases in thigh muscle was observed for nano-Cu already at the lowest dose of 2 mg/kg. In this dose (covering 10% of the birds’ demand) nano form of supplementation significantly increased the activity of Ala-, Leu-, and ArgAP (877, 201, and 719, respectively), compared to standard form of supplementation (461, 90.5, and 576, respectively). In turn, in breast muscle, after supplementation covering 10% of the demand with the nano-Cu, nano-Zn, and nano-Mn compared to the standard form, we did not observe any significant difference in the activity levels of any of the investigated aminopeptidases, except for AlaAP under Zn supplementation. Supplementation with the 20 mg/kg of Nano-Cu (100% of demand) and with 10 mg/kg of Nano-Cu (50% of demand) inhibited the activity of all of the three aminopeptidases in thigh muscle. Supplementation of the minerals in nano form into the diet, especially of Cu and Zn in the dose covering 10% of the demand is relevant to maintain homeostasis in turkey muscles, as indicated by the activity of the aminopeptidases.

  16. Defect chalcopyrite Cu(In{sub 1-x}Ga{sub x}){sub 3}Se{sub 5} (0Ga-content Cu(In,Ga) Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, M.A.; Wiesner, H.; Niles, D.; Ramanathan, K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0CuIn{sub 1 {minus}x}Ga{sub x}Se{sub 2} absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, the authors postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character - both structural and electrical - at the very chalcopyrite/defect chalcopyrite interface. They demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

  17. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

    Science.gov (United States)

    Kamara, S; Terki, F; Dumas, R; Dehbaoui, M; Sadowski, J; Galéra, R M; Tran, Q-H; Charar, S

    2012-06-01

    We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

  18. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  19. Ecological modelling of a wetland for phytoremediating Cu, Zn and Mn in a gold–copper mine site using Typha domingensis (Poales: Typhaceae near Orange, NSW, Australia

    Directory of Open Access Journals (Sweden)

    Subrahmanyam Sreenath

    2017-12-01

    Full Text Available An artificial wetland was computationally modelled using STELLA®, a graphical programming tool for an Au-Cu mine site in Central-west NSW, the aim of which was to offer a predictive analysis of a proposed wetland for Cu, Zn and Mn removal using Typha domingensis as the agent. The model considers the important factors that impact phytoremediation of Cu, Zn and Mn. Simulations were performed to optimise the area of the wetland; concentration of Cu, Zn and Mn released from mine (AMD; and flow rates of water for maximum absorption of the metals. A scenario analysis indicates that at AMD = 0.75mg/L for Cu, Zn and Mn, 12.5, 8.6, and 357.9 kg of Cu, Zn and Mn, respectively, will be assimilated by the wetland in 35 years, which would be equivalent to 61 mg of Cu/kg, 70 mg of Zn/kg and 2,886 mg of Mn/kg of T. domingensis, respectively. However, should Cu, Zn and Mn in AMD increase to 3 mg/L, then 18.6 kg of Cu and 11.8 kg of Zn, respectively, will be assimilated in 35 years, whereas no substantial increase in absorption for Mn would occur. This indicates that 91 mg of Cu, 96 mg of Zn and 2917 mg of Mn will be assimilated for every kg of T. domingensis in the wetland. The best option for Cu storage would be to construct a wetland of 50,000 m2 area (AMD = 0.367 mg/L of Cu, which would capture 14.1 kg of Cu in 43 years, eventually releasing only 3.9 kg of Cu downstream. Simulations performed for a WA of 30,000 m2 indicate that for AMD = 0.367 mg/L of Zn, the wetland captures 6.2 kg, releasing only 3.5 kg downstream after 43 years; the concentration of Zn in the leachate would be 10.2 kg, making this the most efficient wetland amongst the options considered for phytoremediating Zn. This work will help mine managers and environmental researchers in developing an effective environmental management plan by focusing on phytoremediation, with a view at extracting Cu, Zn and Mn from the contaminated sites.

  20. Magnetic properties of epitaxial MnAs thin films on GaAs (001)

    CERN Document Server

    Park, Y S

    2000-01-01

    The magnetic properties of two types of epitaxial MnAs films on GaAs (001) substrates in the thickness range of 20 approx 200 nm were studied. Using longitudinal a magneto-optical Kerr-effect(MOKE) apparatus at lambda=632.8 nm, we determined the Curie temperatures of the 100-nm thick films to be 54.0+-0.5 .deg. C and 63.7+-0.5 .deg. C for type A films and type B films, respectively. The observed Curie temperatures corresponded to increases of 36.8 .deg. C and 33.9 .deg. C per one percent increase in the unit cell volume for type A and B, respectively. The normalized maximum MOKE signal from the type A film exhibited a first-order-like magnetic transition while that of type B underwent a second-order-like transition. These different behaviors between types A and B stem from different residual stresses being exerted on the hexagonal phase. Utilizing a Foner-type vibrating sample magnetometer at room temperature, we examined the thickness dependence of the coercive force and the saturation magnetization of the f...

  1. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.

    Science.gov (United States)

    Souma, S; Chen, L; Oszwałdowski, R; Sato, T; Matsukura, F; Dietl, T; Ohno, H; Takahashi, T

    2016-06-06

    Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry.

  2. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As

    Science.gov (United States)

    Souma, S.; Chen, L.; Oszwałdowski, R.; Sato, T.; Matsukura, F.; Dietl, T.; Ohno, H.; Takahashi, T.

    2016-01-01

    Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry. PMID:27265402

  3. Structural, transport, magnetic, magnetocaloric properties and critical analysis of Ni-Co-Mn-Ga Heusler alloys

    Science.gov (United States)

    Arumugam, S.; Devarajan, U.; Esakki Muthu, S.; Singh, Sanjay; Thiyagarajan, R.; Raja, M. Manivel; Rama Rao, N. V.; Banerjee, Alok

    2017-11-01

    In this work, we have investigated structural, transport, magnetic, magnetocaloric (MC) properties and critical exponents analysis of the (Ni2.1-xCox)Mn0.9 Ga (x = 0, 0.04, 0.12 and 0.2) Heusler alloys. For all compositions, cubic austenite (A) phase with metallic character is observed at room temperature (RT). With increasing of Co content, magnitude of resistivity decreases, whereas residual resistivity (ρ0) and electron scattering factor (A) increases linearly. Magnetic measurements exhibit that ferromagnetic (FM) Curie temperature (TCA) increases towards RT by increasing Co concentration. All samples show conventional MC and maximum magnetic entropy change (ΔSMpeak) of -2.8 Jkg-1 K-1 is observed for x = 0.12 at 147 K under 5 T. Further, hysteresis is observed between cooling and warming cycles around FM-PM (TCA) transition in x = 0, 0.04 samples, which suggests that first order nature of transition. However, there is no hysteresis across TCA for x = 0.12 and 0.2 samples suggesting second-order nature of the transition. The critical exponents are calculated for x = 0.12 sample around TCA using Arrott plot and Kouvel-Fisher method, the estimated critical exponents are found closer to the mean-field model reveals the long range ferromagnetic ordering in this composition.

  4. Structural and elastic properties of Ni2+xMn1-xGa alloys

    International Nuclear Information System (INIS)

    Ghosh, Subhradip; Vitos, Levente; Sanyal, Biplab

    2011-01-01

    The structural parameters and the energetics of the Ni 2+x Mn 1-x Ga alloys have been investigated by the first-principles Exact Muffin Tin Orbital-Coherent Potential Approximation (EMTO-CPA) for 0.10 m . The qualitative behavior of δE with variation of x has been found to be in agreement with the experimentally observed variation of T m with x. The elastic constants for the entire range of x have also been calculated and the determination of a relationship between δE and the elastic shear modulus has been attempted. It is seen that δE varies linearly with elastic shear modulus C', qualitatively similar to the relation between T m and C'. The energetics calculated with the EMTO method agrees quite well with the all-electron full-potential results ensuring the accuracy of the method. These results show that the EMTO-CPA method is one of the most reliable and accurate first-principles methods, in the context of off-stoichiometric alloys which undergo martensitic phase transformations.

  5. Angle-dependent spin-wave resonance spectroscopy of (Ga,Mn)As films

    Science.gov (United States)

    Dreher, L.; Bihler, C.; Peiner, E.; Waag, A.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

    2013-06-01

    A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [C. Bihler , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.79.045205 79, 045205 (2009)], this formalism accounts for elliptical magnetization precession and magnetic properties arbitrarily varying across the layer thickness, including the magnetic anisotropy parameters, the exchange stiffness, the Gilbert damping, and the saturation magnetization. To demonstrate the usefulness of our modeling approach, we experimentally study a set of (Ga,Mn)As samples grown by low-temperature molecular-beam epitaxy by means of angle-dependent standing spin-wave resonance spectroscopy and electrochemical capacitance-voltage measurements. By applying our modeling approach, the angle dependence of the spin-wave resonance data can be reproduced in a simulation with one set of simulation parameters for all external field orientations. We find that the approximately linear gradient in the out-of-plane magnetic anisotropy is related to a linear gradient in the hole concentrations of the samples.

  6. Negative and positive magnetocaloric effect in Ni-Fe-Mn-Ga alloy

    International Nuclear Information System (INIS)

    Duan Jingfang; Huang Peng; Zhang Hu; Long Yi; Wu Guangheng; Rongchang Ye; Chang Yongqin; Farong Wan

    2007-01-01

    The phase transition process and magnetic entropy change ΔS of Ni 54.5 FeMn 20 Ga 24.5 alloy were studied. Substitution of Fe for Ni increases the Curie temperature and decreases the temperature of martensitic phase transition. The transition from ferromagnetic martensitic to ferrormagnetic austenitic state leads to an abrupt increase of magnetization below 0.5T and an abrupt decrease of magnetization above 0.5T. The sign of ΔS changes from positive to negative with increasing the applied field from 0.5 to 2T. The maximal value of the positive magnetic entropy change ΔS is about 3.1J/kgK for the applied field from 0 to 0.5T. The increase of applied field from 1.5T results in a negative ΔS. The peak of negative ΔS is -2.1J/kgK for a field change of 2T

  7. The role of Cd and Ga in the Cu(In,Ga)S{sub 2}/CdS heterojunction studied with X-ray spectroscopic methods

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Benjamin E.

    2010-08-15

    Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S{sub 2}/CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S{sub 2} (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S{sub 2}/CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S{sub 2}/CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S{sub 2} conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot

  8. The role of Cd and Ga in the Cu(In,Ga)S2/CdS heterojunction studied with X-ray spectroscopic methods

    International Nuclear Information System (INIS)

    Johnson, Benjamin E.

    2010-01-01

    Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S 2 /CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S 2 (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S 2 /CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S 2 /CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S 2 conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot be CdS as this is

  9. Magnetic properties of the semimagnetic semiconductor Zn0.15Mn0.85Ga2Se4

    International Nuclear Information System (INIS)

    Cadenas, Ruben; Perez, Flor V.; Quintero, Miguel; Quintero, Eugenio; Tovar, Rafael; Morocoima, Manuel; Gonzalez, Jesus; Bocaranda, P.; Ruiz, J.; Broto, J.M.; Rakoto, H.

    2007-01-01

    We report on the magnetic measurements of the semimagnetic semiconductor Zn 0.15 Mn 0.85 Ga 2 Se 4 (ZMGSe). The DC susceptibility and high magnetic field indicate that the ZMGSe orders antiferromagnetically at T∼6 K and undergoes into a spin-flop phase below this temperature. Arrott plots and magnetic entropy changes were used to characterize the order of the transitions

  10. Polarized Neutron Study of Ni-Mn-Ga Alloys: Site-Specific Spin Density Affected by Martensitic Transformation.

    Science.gov (United States)

    Lázpita, P; Barandiarán, J M; Gutiérrez, J; Mondelli, C; Sozinov, A; Chernenko, V A

    2017-10-13

    Polarized neutron scattering has been used to obtain the magnetic moment at specific crystallographic sites of the austenitic and martensitic phases of two nonstoichiometric Ni-Mn-Ga single crystals with close composition. These alloys have been chosen because they exhibit different structures in the paramagnetic state and inverse positions of the respective martensitic transformation and Curie temperature. The diffraction analysis revealed a remarkable result: Despite the similar alloy composition, the magnetic moments of Mn are quite different for the two alloys at the same crystallographic position. Furthermore, such a difference enabled us to assess that the exchange coupling between Mn atoms switches from ferro- to antiferromagnetic at a distance between 2.92 and 3.32 Å in the martensite. These results are of great importance to guide first principles calculations that, up to now, have not been contrasted with experiments at the atomic level.

  11. Graphite furnace analysis of a series of metals (Cu, Mn, Pb, Zn and Cd) in ox kidney

    International Nuclear Information System (INIS)

    Souza, Vivianne L.B. de; Nascimento, Rizia K. do; Paiva, Ana Claudia de; Silva, Josenilda M. da; Melo, Jessica V. de

    2013-01-01

    The aim of this study was to create a methodology for animal tissue analysis, with the use of flame atomic absorption spectrophotometry techniques and graphite furnace analysis to determining metal concentrations in ox kidney. The organ of this animal can be considered a great nutritional food, due to the high protein and micronutrient content beyond the ability to absorb and concentrate important metals such as Zn, Fe, Mn and Se. On the other hand, there is a risk when eating this food owing to the capacity to accumulate toxic metals such as Pb and Cd. In accordance with the laboratory analysis, Zn can be analyzed by flame atomic absorption spectrophotometry, but other metals such as Cu, Mn, Pb and Cd, could only be detected by graphite furnace analysis. The results showed that there is more Zn and Cu than other metals. Such metals follows an order reported by the literature (Zn > Cu > Cd > Pb > Mn). The results showed that kidney is actually a rich source of Zn and Cu. The Cd levels in the ox kidney did not exceed the values which cause toxic effects. The adequacy of the results indicates that the proposed methodology can be used for animal tissue analysis.(author)

  12. Graphite furnace analysis of a series of metals (Cu, Mn, Pb, Zn and Cd) in ox kidney

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Vivianne L.B. de; Nascimento, Rizia K. do; Paiva, Ana Claudia de; Silva, Josenilda M. da, E-mail: vlsouza@cnen.gov.br, E-mail: riziakelia@hotmail.com, E-mail: acpaiva@cnen.gov.br, E-mail: jmnilda@hotmail.com [Centro Regional de Ciencias Nucleares do Nordeste (CRCN-NE/CNEN-PE), Recife, PE (Brazil); Melo, Jessica V. de, E-mail: Jessica_clorofila@hotmail.com [Universidade de Pernambuco, Recife, PE (Brazil)

    2013-07-01

    The aim of this study was to create a methodology for animal tissue analysis, with the use of flame atomic absorption spectrophotometry techniques and graphite furnace analysis to determining metal concentrations in ox kidney. The organ of this animal can be considered a great nutritional food, due to the high protein and micronutrient content beyond the ability to absorb and concentrate important metals such as Zn, Fe, Mn and Se. On the other hand, there is a risk when eating this food owing to the capacity to accumulate toxic metals such as Pb and Cd. In accordance with the laboratory analysis, Zn can be analyzed by flame atomic absorption spectrophotometry, but other metals such as Cu, Mn, Pb and Cd, could only be detected by graphite furnace analysis. The results showed that there is more Zn and Cu than other metals. Such metals follows an order reported by the literature (Zn > Cu > Cd > Pb > Mn). The results showed that kidney is actually a rich source of Zn and Cu. The Cd levels in the ox kidney did not exceed the values which cause toxic effects. The adequacy of the results indicates that the proposed methodology can be used for animal tissue analysis.(author)

  13. Cu(InGa)Se{sub 2} absorber formation by in-situ, low-temperature annealing of co-evaporated bilayer (InGa){sub 2}Se{sub 3}/CuSe precursors

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Kyeongchan; Kim, Woo Kyoung, E-mail: wkim@ynu.ac.kr

    2015-12-01

    Chalcopyrite Cu(InGa)Se{sub 2} (CIGS) absorbers were fabricated by the formation of bilayer stacked glass/Mo/(InGa){sub 2}Se{sub 3}/CuSe precursors followed by in-situ thermal annealing at 450 °C for approximately 10 min in a vacuum evaporator. The material properties (e.g., crystal orientation, compositional depth profile, and overall composition) and device performance of the resulting CIGS absorbers were compared with those of the CIGS absorbers formed by conventional 1-stage and 3-stage CIGS formation processes at a similar temperature. X-ray diffraction confirmed that the 1-stage co-evaporation and in-situ annealing of the bilayer precursor produced a polycrystalline CIGS absorber without a specific texture, whereas the CIGS absorber formed by the 3-stage process showed a highly (220) preferred orientation. Secondary ion mass spectrometry revealed Ga accumulation at the bottom of CIGS formed by in-situ annealing of the bilayer precursors. The cell efficiency of the device with the CIGS absorber formed by the in-situ, low-temperature (450 °C) annealing of bilayer stacked glass/Mo/(InGa){sub 2}Se{sub 3}/CuSe precursors was comparable to that produced by the conventional 3-stage process at a similar temperature. - Highlights: • Annealing of (InGa){sub 2}Se{sub 3}/CuSe precursors was compared with coevaporation process. • In-situ annealing of (InGa){sub 2}Se{sub 3}/CuSe precursors at 450 °C produced about 9% solar cell. • Ga profile within Cu(InGa)Se{sub 2} depended on process profile during co-evaporation.

  14. Growth of metastable fcc Mn thin film on GaAs(001) and its electronic structure studied by photoemission with synchrotron radiation

    International Nuclear Information System (INIS)

    Chen Yan; Dong Guosheng; Zhang Ming

    1995-01-01

    The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured. A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interpret the experimental result

  15. High-Temperature Ferromagnetism in Cr- and Mn-Implanted Al(sub x)Ga(sub 1-x)N

    National Research Council Canada - National Science Library

    Ryu, Mee-Yi

    2007-01-01

    ... technique remains a challenging problem. Therefore, we have performed a systematic investigation of annealing temperature effects on magnetic, electrical, and optical properties of Cr-, Mn-, and Ni-implanted AlxGa1-xN to produce a good...

  16. Large anomalous Nernst and spin Nernst effects in the noncollinear antiferromagnets Mn3X (X =Sn ,Ge ,Ga )

    Science.gov (United States)

    Guo, Guang-Yu; Wang, Tzu-Cheng

    2017-12-01

    Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in antiferromagnetic spintronics. Here we study the anomalous Nernst effect (ANE), a phenomenon having the same origin as the AHE, and also the spin Nernst effect (SNE) as well as AHE and the spin Hall effect (SHE) in noncollinear antiferromagnetic Mn3X (X =Sn , Ge, Ga) within the Berry phase formalism based on ab initio relativistic band structure calculations. For comparison, we also calculate the anomalous Nernst conductivity (ANC) and anomalous Hall conductivity (AHC) of ferromagnetic iron as well as the spin Nernst conductivity (SNC) of platinum metal. Remarkably, the calculated ANC at room temperature (300 K) for all three alloys is huge, being 10-40 times larger than that of iron. Moreover, the calculated SNC for Mn3Sn and Mn3Ga is also larger, being about five times larger than that of platinum. This suggests that these antiferromagnets would be useful materials for thermoelectronic devices and spin caloritronic devices. The calculated ANC of Mn3Sn and iron are in reasonably good agreement with the very recent experiments. The calculated SNC of platinum also agrees with the very recent experiments in both sign and magnitude. The calculated thermoelectric and thermomagnetic properties are analyzed in terms of the band structures as well as the energy-dependent AHC, ANC, SNC, and spin Hall conductivity via the Mott relations.

  17. Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures

    Science.gov (United States)

    Wang, Hailong; Ma, Jialin; Yu, Xueze; Yu, Zhifeng; Zhao, Jianhua

    2017-01-01

    The electric-field effects on the magnetism in perpendicularly magnetized (Ga,Mn)As films at high temperatures have been investigated. An electric-field as high as 0.6 V nm-1 is applied by utilizing a solid-state dielectric Al2O3 film as a gate insulator. The coercive field, saturation magnetization and magnetic anisotropy have been clearly changed by the gate electric-field, which are detected via the anomalous Hall effect. In terms of the Curie temperature, a variation of about 3 K is observed as determined by the temperature derivative of the sheet resistance. In addition, electrical switching of the magnetization assisted by a fixed external magnetic field at 120 K is demonstrated, employing the gate-controlled coercive field. The above experimental results have been attributed to the gate voltage modulation of the hole density in (Ga,Mn)As films, since the ferromagnetism in (Ga,Mn)As is carrier-mediated. The limited modulation magnitude of magnetism is found to result from the strong charge screening effect introduced by the high hole concentration up to 1.10  ×  1021 cm-3, while the variation of the hole density is only about 1.16  ×  1020 cm-3.

  18. Effects of Mn, Cu doping concentration to the properties of magnetic nanoparticles and arsenic adsorption capacity in wastewater

    International Nuclear Information System (INIS)

    Thi, Tran Minh; Trang, Nguyen Thi Huyen; Van Anh, Nguyen Thi

    2015-01-01

    Highlights: • Investigation the decrease of saturate magnetic moment of Fe 3 O 4 over time. • Substitution of Mn, Cu ions into Fe position to create stable properties of materials. • Investigate the surface and mesopore structure of nanoparticles. • The arsenic adsorption capacity of Cu doped Fe 3 O 4 nanomaterials is higher than of Fe 3 O 4 and Mn doped Fe 3 O 4 nanomaterials. - Abstract: The research results of Fe 3 O 4 and Mn, Cu doped Fe 3 O 4 nanomaterials synthesized by a chemical method for As(III) wastewater treatment are presented in this paper. The X-ray diffraction patterns and transmission electron microscopy images showed that samples had the cubic spinel structure with the grain sizes were varied from 9.4 nm to 18.1 nm. The results of vibrating sample magnetometer measurements at room temperature showed that saturation magnetic moments of Fe 1−x Cu x Fe 2 O 4 and Fe 1−x Mn x Fe 2 O 4 samples decreased from 65.9 emu/g to 53.2 emu/g and 65.9 emu/g to 61.5 emu/g, respectively, with the increase of Cu, Mn concentrations from 0.0 to 0.15. The nitrogen adsorption–desorption isotherm of a typical Fe 3 O 4 sample at 77 K was studied in order to investigate the surface and porous structure of nanoparticles by BET method. The specific surface area of Fe 3 O 4 magnetic nanoparticles was calculated about of 100.2 m 2 /g. The pore size distribution of about 15–20 nm calculated by the BJH (Barrett, Joyner, and Halendar) method at a relative pressure P/P 0 of about 1. Although the saturation magnetic moments of samples decreased when the increase of doping concentration, but the arsenic adsorption capacity of Cu doped Fe 3 O 4 nanoparticles is better than that of Fe 3 O 4 and Mn doped Fe 3 O 4 nanoparticles in a solution with pH = 7. In the solution with a pH > 14, the arsenic adsorption of magnetic nanoparticles is insignificant

  19. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Shafarman, William N. [Univ. of Delaware, Newark, DE (United States)

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  20. Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure

    International Nuclear Information System (INIS)

    Nelson, A.J.; Gabor, A.M.; Contreras, M.A.; Tuttle, J.R.; Noufi, R.; Sobol, P.E.; Asoka-Kumar, P.; Lynn, K.G.

    1995-01-01

    X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se 2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe 2 and Cu(In,Ga)Se 2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. copyright 1995 American Institute of Physics

  1. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Hongling Wei

    2017-11-01

    Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

  2. Mitigation of chromium poisoning of cathodes in solid oxide fuel cells employing CuMn1.8O4 spinel coating on metallic interconnect

    Science.gov (United States)

    Wang, Ruofan; Sun, Zhihao; Pal, Uday B.; Gopalan, Srikanth; Basu, Soumendra N.

    2018-02-01

    Chromium poisoning is one of the major reasons for cathode performance degradation in solid oxide fuel cells (SOFCs). To mitigate the effect of Cr-poisoning, a protective coating on the surface of interconnect for suppressing Cr vaporization is necessary. Among the various coating materials, Cu-Mn spinel coating is considered to be a potential candidate due to their good thermal compatibility, high stability and good electronic conductivity at high temperature. In this study, Crofer 22 H meshes with no protective coating, those with commercial CuMn2O4 spinel coating and the ones with lab-developed CuMn1.8O4 spinel coating were investigated. The lab-developed CuMn1.8O4 spinel coating were deposited on Crofer 22 H mesh by electrophoretic deposition and densified by a reduction and re-oxidation process. With these different Crofer 22 H meshes (bare, CuMn2O4-coated, and CuMn1.8O4-coated), anode-supported SOFCs with Sr-doped LaMnO3-based cathode were electrochemically tested at 800 °C for total durations of up to 288 h. Comparing the mitigating effects of the two types of Cu-Mn spinel coatings on Cr-poisoning, it was found that the performance of the denser lab-developed CuMn1.8O4 spinel coating was distinctly better, showing no degradation in the cell electrochemical performance and significantly less Cr deposition near the cathode/electrolyte interface after the test.

  3. Characterisation of a natural quartz crystal as a reference material for microanalytical determination of Ti, Al, Li, Fe, Mn, Ga and Ge

    Science.gov (United States)

    Audetat, Andreas; Garbe-Schonberg, Dieter; Kronz, Andreas; Pettke, Thomas; Rusk, Brian G.; Donovan, John J.; Lowers, Heather

    2015-01-01

    A natural smoky quartz crystal from Shandong province, China, was characterised by laser ablation ICP-MS, electron probe microanalysis (EPMA) and solution ICP-MS to determine the concentration of twenty-four trace and ultra trace elements. Our main focus was on Ti quantification because of the increased use of this element for titanium-in-quartz (TitaniQ) thermobarometry. Pieces of a uniform growth zone of 9 mm thickness within the quartz crystal were analysed in four different LA-ICP-MS laboratories, three EPMA laboratories and one solution-ICP-MS laboratory. The results reveal reproducible concentrations of Ti (57 ± 4 μg g-1), Al (154 ± 15 μg g-1), Li (30 ± 2 μg g-1), Fe (2.2 ± 0.3 μg g-1), Mn (0.34 ± 0.04 μg g-1), Ge (1.7 ± 0.2 μg g-1) and Ga (0.020 ± 0.002 μg g-1) and detectable, but less reproducible, concentrations of Be, B, Na, Cu, Zr, Sn and Pb. Concentrations of K, Ca, Sr, Mo, Ag, Sb, Ba and Au were below the limits of detection of all three techniques. The uncertainties on the average concentration determinations by multiple techniques and laboratories for Ti, Al, Li, Fe, Mn, Ga and Ge are low; hence, this quartz can serve as a reference material or a secondary reference material for microanalytical applications involving the quantification of trace elements in quartz.

  4. Ab initio studies on electronic and magnetic properties of X{sub 2}PtGa (X=Cr, Mn, Fe, Co) Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Tufan, E-mail: aparnachakrabarti@gmail.com [Homi Bhaba National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094 (India); Chakrabarti, Aparna [Homi Bhaba National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2017-02-01

    Using first-principles calculations based on density functional theory, we probe the electronic and magnetic properties of X{sub 2}PtGa (X being Cr, Mn, Fe, Co) Heusler alloys. Our calculations predict that all these systems possess inverse Heusler alloy structure in the respective ground states. Application of tetragonal distortion leads to lowering of energy with respect to their cubic phase. The equilibrium volumes of both the phases are nearly the same. These indicate that the materials studied here are prone to undergo martensite transition, as has been recently shown theoretically for Mn{sub 2}PtGa in the literature. Ground state with a tetragonal symmetry is corroborated by the observation of soft tetragonal shear constants in the cubic phase. By comparing the energies of various types of magnetic configurations we predict that Cr{sub 2}PtGa and Mn{sub 2}PtGa possess ferrimagnetic configuration whereas Fe{sub 2}PtGa and Co{sub 2}PtGa possess ferromagnetic configuration in their respective ground states. - Highlights: • We predict stable martensitic phase of X{sub 2}PtGa (X=Cr, Mn, Fe, Co). • Co{sub 2}PtGa possesses least inherent brittleness among all the materials. • Martensite transitions are possible for the investigated materials. • A tetragonal ground state with high spin polarization is predicted for Co{sub 2}PtGa.

  5. Ab initio studies on electronic and magnetic properties of X2PtGa (X=Cr, Mn, Fe, Co) Heusler alloys

    International Nuclear Information System (INIS)

    Roy, Tufan; Chakrabarti, Aparna

    2017-01-01

    Using first-principles calculations based on density functional theory, we probe the electronic and magnetic properties of X 2 PtGa (X being Cr, Mn, Fe, Co) Heusler alloys. Our calculations predict that all these systems possess inverse Heusler alloy structure in the respective ground states. Application of tetragonal distortion leads to lowering of energy with respect to their cubic phase. The equilibrium volumes of both the phases are nearly the same. These indicate that the materials studied here are prone to undergo martensite transition, as has been recently shown theoretically for Mn 2 PtGa in the literature. Ground state with a tetragonal symmetry is corroborated by the observation of soft tetragonal shear constants in the cubic phase. By comparing the energies of various types of magnetic configurations we predict that Cr 2 PtGa and Mn 2 PtGa possess ferrimagnetic configuration whereas Fe 2 PtGa and Co 2 PtGa possess ferromagnetic configuration in their respective ground states. - Highlights: • We predict stable martensitic phase of X 2 PtGa (X=Cr, Mn, Fe, Co). • Co 2 PtGa possesses least inherent brittleness among all the materials. • Martensite transitions are possible for the investigated materials. • A tetragonal ground state with high spin polarization is predicted for Co 2 PtGa.

  6. Luminescence Characteristics of ZnGa2O4 Thick Film Doped with Mn2+ and Cr3+ at Various Sintering Temperatures

    Science.gov (United States)

    Cha, Jae Hyeok; Kim, Kyung Hwan; Park, Yong Seo; Kwon, Sang Jik; Choi, Hyung Wook

    2007-10-01

    ZnGa2O4 phosphor separately doped with Mn2+ and Cr3+ was synthesized by solid-state reaction, and thick films were deposited by screen printing. The X-ray diffraction (XRD) patterns of ZnGa2O4 phosphor thick films show a (311) main peak and a spinal phase. Uniform distribution and filled morphology of the doped ZnGa2O4 phosphor thick films were formed at the sintering temperature of 1100 °C. The CL spectrum of Mn2+-doped ZnGa2O4 shows the main peak of 512 nm green emission with the 4T1→6A1 transition of Mn2+ ions and the CL spectrum of Cr3+-doped ZnGa2O4 shows the main peak of 716 nm red emission with the 2E→4A2 transition of Cr3+ ions.

  7. Eutectic Al-Si-Cu-Fe-Mn alloys with enhanced mechanical properties at room and elevated temperature

    International Nuclear Information System (INIS)

    Wang, E.R.; Hui, X.D.; Chen, G.L.

    2011-01-01

    Highlights: → Fabricated a kind of high performance Al-Si alloy with low production costs. → Clarified two different morphologies of α-Fe and corresponding crystal structures. → Analyzed the crystallography of Cu-rich phases before and after T6 treatment. → Fracture mechanism of precipitates in experimental alloys during tensile process. -- Abstract: In this paper, we report a novel kind of eutectic Al-Si-Cu-Fe-Mn alloy with ultimate tensile strength up to 336 MPa and 144.3 MPa at room temperature and 300 o C, respectively. This kind of alloy was prepared by metal mold casting followed by T6 treatment. The microstructure is composed of eutectic and primary Si, α-Fe, Al 2 Cu and α-Al phases. Iron-rich phases, which were identified as BCC type of α-Fe (Al 15 (Fe,Mn) 3 Si 2 ), exist in blocky and dendrite forms. Tiny blocky Al 2 Cu crystals disperse in α-Fe dendrites or at the grain boundaries of α-Al. During T6 treatment, Cu atoms aggregate from the super-saturation solid solution to form GP zones, θ'' or θ'. Further analysis found that the enhanced mechanical properties of the experimental alloy are mainly attributed to the formation of α-Fe and copper-rich phases.

  8. Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (0 0 1) films

    International Nuclear Information System (INIS)

    Pechan, Michael J.; Yu, Chengtao; Carr, David; Palmstroem, Chris J.

    2005-01-01

    Remarkably large, strain-induced anisotropy is observed in the thin-film Heusler alloy Co 2 MnGa. 30 nm Co 2 MnGa (0 0 1) films have been epitaxially grown on different interlayers/substrates with varied strain, and investigated with ferromagnetic resonance. The film grown on ErAs/InGaAs/InP experiences tension strain, resulting in an out-of-plane strain-induced anisotropy (∼1.1x10 6 erg/cm 3 ) adding to the effects of shape anisotropy. In contrast, the film grown on ScErAs/GaAs, experiences a compression strain, resulting in an out-of-plane strain-induced anisotropy (∼3.3x10 6 erg/cm 3 ) which almost totally cancels the effects of shape anisotropy, thus rendering the film virtually isotropic. This results in the formation of stripe domains in remanence. In addition, small, but well-defined 2-fold and 4-fold in-plane anisotropy coexist in each sample with weak, but interesting strain dependence. Transport measurement shows small (<1%) magnetoresistance effects in the compression film, but negligible magnetoresistance in the relaxed and tension strained samples

  9. The origin and control of the sources of AMR in (Ga,Mn)As devices

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Novák, Vít; Olejník, Kamil; Kovalev, A.A.; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2009-01-01

    Roč. 321, č. 8 (2009), s. 1001-1008 ISSN 0304-8853 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.204, year: 2009

  10. Ordinary and extraordinary Coulomb blockade magnetoresistance in (Ga,Mn)As single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Novák, Vít; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 144, - (2007), s. 536-541 ISSN 0038-1098 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA MŠk LC510; GA ČR GEFON/06/E001; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.535, year: 2007

  11. Biosynthesis of lipids in Chlorella vulgaris Beijer. under the action of Mn2+, Zn2+, Cu2+, and Pb2+

    International Nuclear Information System (INIS)

    Gorda, A.Yi.; Grubyinko, V.V.

    2011-01-01

    We study the influence of Mn 2+ , Zn 2+ , Cu 2+ , and Pb 2+ on the intensity of biosynthesis of lipids in unicellular algae Chlorella vulgaris Beijer. In all cases, there is a general tendency to the accumulation of triacylglycerols, dyacylglycerols, and nonesterified fatty acids, which participate in protecting the cages of algae from an unfavorable action, and to a decrease of the content of phospholipids. For the actions of Zn 2+ , Cu 2+ , and Pb 2+ , 14 C-acetate is maximally included in phospholipids, for the actions of Mn 2+ - in dyacylglycerols, and the synthesis of other classes of lipids is inhibited. The content of chlorophylls a and b grows substantially for the actions of ions of zinc and lead and diminishes for the actions of ions of copper and manganese. We discuss the regulatory role and the toxic influence of ions of metals on the lipid metabolism in chlorella.

  12. Development of medical guide wire of Cu-Al-Mn-base superelastic alloy with functionally graded characteristics.

    Science.gov (United States)

    Sutou, Yuji; Omori, Toshihiro; Furukawa, Akihisa; Takahashi, Yukinori; Kainuma, Ryosuke; Yamauchi, Kiyoshi; Yamashita, Shuzo; Ishida, Kiyohito

    2004-04-15

    A new type of medical guide wire with functionally graded hardness from the tip to the end was developed with the use of Cu-Al-Mn-based alloys. The superelasticity (SE) of the Cu-Al-Mn-based alloys in the tip is drastically improved by controlling the grain size, whereas the end of the wire is hardened using bainitic transformation by aging at around 200-400 degrees C. Therefore, the tip of the guide wire shows a superelasticity and its end has high stiffness. This guide wire with functionally graded characteristics shows excellent pushability and torquability, superior to that of the Ni-Ti guide wire. Copyright 2004 Wiley Periodicals, Inc.

  13. Hot injection synthesis of Cu(In, Ga)Se2 nanocrystals with tunable bandgap

    Science.gov (United States)

    Latha, M.; Aruna Devi, R.; Velumani, S.

    2018-05-01

    CuIn1-xGaxSe2 nanocrystals (CIGSe NCs) were synthesized with different gallium (Ga) content by the hot injection process at low reaction temperature for the first time. The Ga content [x = Ga(In + Ga)] was varied such as 0, 0.25, 0.50 and 0.75 to study their influences on the structural, morphological, compositional and optical properties of CIGSe NCs. X-ray diffraction (XRD) analysis showed the peak shift towards higher 2θ angle. The lattice parameters a and c were decreased linearly as x value increases which propitiated Vegard's law. Transmission electron microscopy (TEM) analysis revealed a decrease in the particle size from 55 to 22 nm. Ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectra indicated a blue shift towards the lower wavelength and bandgap was tuned from 1.04 to 1.41eV. Apart from this, CIGSe thin films were prepared by doctor blade coating method followed by annealing under Se/Ar atmosphere. The mobility of CIGSe thin film increased whereas resistivity decreased. Moreover, the photoconductivity of CIGSe annealed thin film exhibited almost 2-fold increase under an illumination of light. We realize from these results that the synthesized CIGSe NCs with x = 0.25 is expected to have the important perspective to be efficiently exploited as an absorber layer in cost-effective thin film solar cells.

  14. Tuning of cu doping on phase transition and high-field phase diagram of Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Shang, C. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Xia, Z.C., E-mail: xia9020@hust.edu.cn [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Wei, M.; Jin, Z.; Chen, B.R.; Shi, L.R. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Ouyang, Z.W. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Huang, S.; Xiao, G.L. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-10-15

    Pulsed high magnetic fields up to 52 T have been used in the systematic investigation of the magnetic properties of manganites Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3} (0≤x≤0.15). The Cu-doping dependent first-order metamagnetic transitions are observed below the charge ordering temperature, which is ascribed to both Cu-doping and field-induced collapse of the charge ordering with antiferromagnetic phase. Based on the magnetization and electrical transport measurements, a three-dimensional phase diagram with coordinate axis of temperature, magnetic field, and doping level has been obtained, in which the critical fields of the metamagnetic transitions increase with the increase in Cu content and decrease with increasing temperature. The experimental results confirm that Mn-site substitution with Cu destroys the Mn{sup 3+}–O{sup 2−}–Mn{sup 4+} bridges and weakens the double exchange interaction between Mn{sup 3+} and Mn{sup 4+} ions, which shows an obvious tuning effect on the metamagnetic transition under the external magnetic field. - Highlights: • Tuning effect of Cu-doping on the properties of Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3} was studied. • First-order metamagnetic transition was observed under high magnetic fields. • A phase diagram with temperature, magnetic field and doping level was obtained. • Cu-doping weakens the ferromagnetic coupling in Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3}.

  15. A comparative study of metabolism and concentration factors of Fe, Cu, Zn, Mn, Co and Mg in Carcinus maenas and Cancer irroratus ovaries during ovogenesis

    International Nuclear Information System (INIS)

    Martin, J.-L.M.

    1975-01-01

    Fe, Cu, Zn, Mn, Co, and Mg were analysed in the ovary of Carcinus maenas and Cancer irroratus during ovogenesis. In both ovaries, the relatives rates, expressed as parts per millions as a ratio of wet and dry weight, are the following: Mg>Zn>Fe>Cu>Mn>Co, while in the hemolymph of Cancer irroratus these relative rates are the following: Mg>Cu>Zn>Fe>Mn>Co. Compared to concentrations of these metals in sea water, Mg expected, all metals in the ovary of Cancer irroratus have a concentration factor upper than 1. Compared to the concentration of metals in the hemolymph is, for Fe, Mn, and Co, the concentration factor upper than 1, and for Cu, Zn and Mg, the concentration factor lower than 1. A study of correlations was done between the concentrations of metals considered in pairs, and between the concentrations of metals and the parameters: water content and gonad index [fr

  16. Direct determination of Cu, Mn, Pb, and Zn in beer by thermospray flame furnace atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Nascentes, Clesia C.; Kamogawa, Marcos Y.; Fernandes, Kelly G.; Arruda, Marco A.Z.; Nogueira, Ana Rita A.; Nobrega, Joaquim A.

    2005-01-01

    In this work, thermospray flame furnace atomic absorption spectrometry (TS-FF-AAS) was employed for Cu, Mn, Pb, and Zn determination in beer without any sample digestion. The system was optimized and calibration was based on the analyte addition technique. A sample volume of 300 μl was introduced into the hot Ni tube at a flow-rate of 0.4 ml min -1 using 0.14 mol l -1 nitric acid solution or air as carrier. Different Brazilian beers were directly analyzed after ultrasonic degasification. Results were compared with those obtained by graphite furnace atomic absorption spectrometry (GFAAS). The detection limits obtained for Cu, Mn, Pb, and Zn in aqueous solution were 2.2, 18, 1.6, and 0.9 μg l -1 , respectively. The relative standard deviations varied from 2.7% to 7.3% (n=8) for solutions containing the analytes in the 25-50 μg l -1 range. The concentration ranges obtained for analytes in beer samples were: Cu: 38.0-155 μg l -1 ; Mn: 110-348 μg l -1 , Pb: 13.0-32.9 μg l -1 , and Zn: 52.7-226 μg l -1 . Results obtained by TS-FF-AAS and GFAAS were in agreement at a 95% confidence level. The proposed method is fast and simple, since sample digestion is not required and sensitivity can be improved without using expensive devices. The TS-FF-AAS presented suitable sensitivity for determination of Cu, Mn, Pb, and Zn in the quality control of a brewery

  17. An experimental and thermodynamic equilibrium investigation of the Pb, Zn, Cr, Cu, Mn and Ni partitioning during sewage sludge incineration.

    Science.gov (United States)

    Liu, Jingyong; Fu, Jiewen; Ning, Xun'an; Sun, Shuiyu; Wang, Yujie; Xie, Wuming; Huang, Shaosong; Zhong, Sheng

    2015-09-01

    The effects of different chlorides and operational conditions on the distribution and speciation of six heavy metals (Pb, Zn, Cr, Cu, Mn and Ni) during sludge incineration were investigated using a simulated laboratory tubular-furnace reactor. A thermodynamic equilibrium investigation using the FactSage software was performed to compare the experimental results. The results indicate that the volatility of the target metals was enhanced as the chlorine concentration increased. Inorganic-Cl influenced the volatilization of heavy metals in the order of Pb>Zn>Cr>Cu>Mn>Ni. However, the effects of organic-Cl on the volatility of Mn, Pb and Cu were greater than the effects on Zn, Cr and Ni. With increasing combustion temperature, the presence of organic-Cl (PVC) and inorganic-Cl (NaCl) improved the transfer of Pb and Zn from bottom ash to fly ash or fuse gas. However, the presence of chloride had no obvious influence on Mn, Cu and Ni. Increased retention time could increase the volatilization rate of heavy metals; however, this effect was insignificant. During the incineration process, Pb readily formed PbSiO4 and remained in the bottom ash. Different Pb compounds, primarily the volatile PbCl2, were found in the gas phase after the addition of NaCl; the dominant Pb compounds in the gas phase after the addition of PVC were PbCl2, Pb(ClO4)2 and PbCl2O4. Copyright © 2015. Published by Elsevier B.V.

  18. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    OpenAIRE

    Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

    2017-01-01

    Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

  19. Laser surface remelting of a Cu-Al-Ni-Mn shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Romero da Silva, Murillo, E-mail: murilloromero_@hotmail.com [Postgraduate Program in Materials Science and Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil); Gargarella, Piter [Department of Materials Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil); Gustmann, Tobias [IFW Dresden, Institute for Complex Materials, Helmholtzstraße 20, d-01069 Dresden (Germany); Botta Filho, Walter José; Kiminami, Claudio S. [Department of Materials Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil); Eckert, Jürgen [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstraße 12, A-8700 Leoben (Austria); Department Materials Physics, Montanuniversität Leoben, Jahnstraße 12, A-8700 Leoben (Austria); Pauly, Simon [IFW Dresden, Institute for Complex Materials, Helmholtzstraße 20, d-01069 Dresden (Germany); Bolfarini, Claudemiro [Department of Materials Engineering, Federal University of São Carlos, Rodovia Washington Luís, km 235, São Carlos, SP 13565-905 (Brazil)

    2016-04-20

    Cu-based shape memory alloys (SMAs) show better thermal and electrical conductivity, lower cost and are easier to process than traditional Ti-based SMAs, but they exhibit a lower ductility and lower fatigue life. These properties can be improved by decreasing the grain size and reducing microstructural segregations, which may be obtained using laser surface remelting treatments. The aim of the present work was to produce and characterize laser remelted Cu-11.85Al-3.2Ni-3Mn SMA plates. Twelve plates with the dimensions of 50×10×1.5 mm were produced by suction casting in a first step. The surface of the plates was remelted afterwards with a laser beam power of 300 W, hatching of 50% and using three different scanning speeds: 100, 300 and 500 mm/s. The plates were characterized by optical and scanning electron microscopy, X-ray diffraction, differential scanning calorimetry as well as by tensile and microhardness tests. The remelted region showed a T morphology, with average thickness of 52, 29 and 23 µm for the plates remelted with scanning speeds of 100, 300 and 500 mm/s, respectively. In the plates remelted with 100 and 300 mm/s, some pores were found around the center of the track, due to the keyhole instability. The same phase formed in the as-cast sample was obtained in the laser remelted coatings: the monoclinic β′{sub 1} martensitic phase with zig-zag morphology. However, the laser treated samples exhibit lower transformation temperatures than the as-cast sample, due to grain refinement at the surface. They also show an improvement in the mechanical properties, with an increase of up to 162 MPa in fracture stress, up to 2.2% in ductility and up to 20.9 HV in microhardness when compared with the as-cast sample, which makes the laser surface remelting a promising method for improving the mechanical properties of Cu-based SMAs.

  20. Simultaneous analysis of Zn, Cu, Mn, In, As and Sb in Zinc concentrates by neutron activation

    International Nuclear Information System (INIS)

    Tenorio, F.; Mendoza, P.; Espinosa, R.

    1986-01-01

    A method has been developed for simultaneous analysis by neutronic activation of Zn, Cu, As, Mn, In and Sb in concentrated minerals of Zn. The method is based entirely on the use of instruments as it does not comprise any chemical treatments. Samples and models are submitted to irradiation for 60 minutes in a flux of thermal neutrons of 1.5x10 n/cm 2 s in the reactor RP-0 of IPEN. The induced activities are measured by gamma spectrometry of high resolution using an intrinsic detector of germanium. One measurement is made immediately after the irradiation of 2000s and another 24 hours after the 3600s irradiation. The interference, the reproductibility, and the limits of detection of each element are discussed. The analytic results of 5 zinc concentrates are compared with the ones obtained by atomic absorption showing excellent concordance. The method is particularly adaptable to portable radioisotope sources of neutrons making it possible to use it in sites such as industrial plants

  1. Temperature dependence of electroluminescent emission from (ZnS : Cu, Mn(H)) type luminophors

    International Nuclear Information System (INIS)

    Singh, L.K.

    1986-04-01

    The dependence of electroluminescent yield on temperature for hydrogen coactivated (ZnS : Cu, Mn) type triple band emitting phosphors has been investigated at various temperatures under varied operating conditions of excitations. The influence of the excitation frequency, voltage and of emission wavelengths for the electroluminescent characteristics has also been observed on temperature variations. The results have also been studied for temperature dependences of emitting brightness under the excitation by UV-radiations of 3650 A.U. and a comparison is made between temperature dependent characteristics of E.L. and PL-brightness of emissions. It was observed that, as usual, brightness maxima on temperature scale varied with alteration of operating electric fields regarding frequency and voltage both for blue, green and yellow orange emissions of attempted samples. The important thing which is observed here, is that with regards the temperature EL-intensities vary respectively for all respective emissions but emission peaks are not shifted on wave-length scale. This no shift is due to the narrowly and compactly distributed coactivator levels of hydrogen. (author)

  2. Effect Of Cooling Rate On Thermal And Mechanical Properties Of Cu-%24.2Mn Alloy

    International Nuclear Information System (INIS)

    Celik, H.

    2010-01-01

    In this research, different heat and mechanical treatments have been applied to the Cu-%24.2Mn and some samples have been obtained from this alloy. On these samples, phase transformations have been formed by thermal and mechanical effect. Morphological, mechanical and crystallographic properties of the phase transformations have been examined by using different physical methods. Austenite phase has been obtained in the samples which have been applied slow and rapid cooling according to the SEM analysis. It has been observed that the grain size obtained by the rapid cooling is smaller than the grain size obtained by the slow cooling. Therefore, it has been concluded that the cooling process differences, changes the grain size of the alloy. Compression stress has been applied to the alloy in order to search the deformation effect on the austenite phase transformation. The structural features of the phase transformations have been examined. Slip lines and martensite structural were observed on the surface of the alloys after the deformation. Changes in phase structure of the alloy are also examined by means of XRD technique.

  3. Microscopy modifications in an aged Cu-Al-Ni-Mn alloy

    International Nuclear Information System (INIS)

    Gama, J.L.L.; Ferreira, R.A.S.

    2010-01-01

    An Cu-12Al-4Ni-3Mn shape memory alloy have been manufactured using an induction furnace of 24 KVA. After melting, chemical analyse was performed by X-ray fluorescence (XRF). The phase transformation of this alloy was studied in the different sequences produced during thermomechanic treatments. After homogenization, the ingot was solution treated at 850 deg C. At 750 deg C samples were submitted to a reduction by rolling to about 30% in thickness, followed by water quenching. In sequence, the ingot was cold-rolled at different thicknesses. In deformed state, sample of this alloy was submitted to the thermal analyse-DTA for identification of the phase transformation domains. For each identified domain, ageing was carried out, at different times, to evaluate the presence of the different phases. Samples were characterized ray-X diffraction. The results showed that the microstructural evolutions are of a complex nature. At 425 deg C temperature both recrystallization and precipitation of different phases were simultaneously observed. (author)

  4. X-ray resonant Raman scattering cross sections of Mn, Fe, Cu and Zn

    International Nuclear Information System (INIS)

    Sanchez, Hector Jorge; Valentinuzzi, MarIa Cecilia; Perez, Carlos

    2006-01-01

    X-ray fluorescence spectra present singular characteristics produced by the different scattering processes. When atoms are irradiated with incident energy lower and close to an absorption edge, scattering peaks appear due to an inelastic process known as resonant Raman scattering. It constitutes an important contribution to the background of the fluorescent line. The resonant Raman scattering must be taken into account in the determination of low concentration contaminants, especially when the elements have proximate atomic numbers. The values of the mass attenuation coefficients experimentally obtained when materials are analysed with monochromatic x-ray beams under resonant conditions differ from the theoretical values (between 5% and 10%). This difference is due, in part, to the resonant Raman scattering. Monochromatic synchrotron radiation was used to study the Raman effect on pure samples of Mn, Fe, Cu and Zn. Energy scans were carried out in different ranges of energy near the absorption edge of the target element. As the Raman peak has a non-symmetric shape, theoretical models for the differential cross section, convoluted with the instrument function, were used to determine the RRS cross section as a function of the incident energy

  5. Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

    2017-05-15

    Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)

  6. Some physical parameters of CuInGaS_2 thin films deposited by spray pyrolysis for solar cells

    International Nuclear Information System (INIS)

    Kotbi, Ahmed; Hartiti, Bouchaib; Fadili, Salah; Ridah, Abderraouf; Thevenin, Philippe

    2017-01-01

    Copper-indium-gallium-disulphide (CuInGaS_2) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS_2 (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS_2 films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm"-"1. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E_T_a_i_l) of CuInGaS_2 thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS_2 make them an attractive material for photovoltaic devices. (orig.)

  7. Fabrication and electrochemical properties of activated CNF/Cu x Mn1- x Fe2O4 composite nanostructures

    Science.gov (United States)

    Nilmoung, Sukanya; Sonsupap, Somchai; Sawangphruk, Montree; Maensiri, Santi

    2018-06-01

    This work reports the fabrication and electrochemical properties of activated carbon nanofibers composited with copper manganese ferrite (ACNF/Cu x Mn1- x Fe2O4: x = 0.0, 0.2, 0.4, 0.6, 0.8) nanostructures. The obtained samples were characterized by means of X-ray diffraction, field emission scanning electron microscopy, Brunauer-Emmett-Teller analyzer, thermal gravimetric analysis, X-ray photoemission spectroscopy, and X-ray absorption spectroscopy. The supercapacitive behavior of the electrodes is tested using cyclic voltammetery, galvanostatic charge-discharge and electrochemical impedance spectroscopy. By varying ` x', the highest specific capacitance of 384 F/g at 2 mV/s using CV and 314 F/g at 2 A/g using GCD are obtained for the x = 0.2 electrode. The second one of 235 F/g at 2 mV/s using CV and 172 F/g at 2 A/g using GCD are observed for x = 0.8 electrode. The corresponding energy densities are 74 and 41 Wh/kg, respectively. It is observed that the cyclic stability of the prepared samples strongly depend on the amount of carbon, while the specific capacitance was enhanced by the sample with nearly proportional amount between carbon and CuMnFe2O4. Such results may arise from the synergetic effect between CuMnFe2O4 and ACNF.

  8. The Structure and Mechanical Properties of Ni-Mo PM Steels with Addition of Mn And Cu

    Science.gov (United States)

    Lichańska, E.; Kulecki, P.; Pańcikiewicz, K.

    2017-12-01

    The aim of the study was to evaluate the effect of chemical composition on the structure and mechanical properties of Mn-Ni-Mo and Ni-Mo-Cu PM steels. Pre-alloyed powder Astaloy 85Mo, diffusion alloyed powders Distaloy AQ and Distaloy AB produced by Höganäs, low carbon ferromanganese, carbonyl nickel powder T255 with three-dimensional filamentary structure and graphite CU-F have been used as the basic powders. Three mixtures with compositions of Fe-1%Mn-(0.5/1.75)%Ni-(0.5/0.85)%Mo-0.8%C and Fe-1.75%Ni-0.5%Mo-1.5%Cu-0.8%C were prepared in a Turbula mixer. Green compacts were single pressed in a steel die at 660 MPa according to PN-EN ISO 2740 standard. Sinterhardening was carried out at 1250°C in a mixture of 95% N2+5% H2 for 60 minutes. Mechanical tests (tensile, bend, hardness) and microstructural investigations were performed. Additionally, XRD and EDS analysis, fractographic investigations were carried out. The microstructures of steels investigated were mainly bainitic or bainitic-martensitic. Addition 1% Mn to Distaloy AQ based steel caused increase of tensile properties (YS from 422 to 489 MPa, UTS from 522 to 638 MPa, TRS from 901 to 1096 MPa) and decrease of plasticity (elongation from 3.65 to 2.84%).

  9. Merging of Kirkendall Growth and Ostwald Ripening: CuO@MnO2 Core-shell Architectures for Asymmetric Supercapacitors

    Science.gov (United States)

    Huang, Ming; Zhang, Yuxin; Li, Fei; Wang, Zhongchang; Alamusi; Hu, Ning; Wen, Zhiyu; Liu, Qing

    2014-01-01

    Fabricating hierarchical core-shell nanostructures is currently the subject of intensive research in the electrochemical field owing to the hopes it raises for making efficient electrodes for high-performance supercapacitors. Here, we develop a simple and cost-effective approach to prepare CuO@MnO2 core-shell nanostructures without any surfactants and report their applications as electrodes for supercapacitors. An asymmetric supercapacitor with CuO@MnO2 core-shell nanostructure as the positive electrode and activated microwave exfoliated graphite oxide (MEGO) as the negative electrode yields an energy density of 22.1 Wh kg−1 and a maximum power density of 85.6 kW kg−1; the device shows a long-term cycling stability which retains 101.5% of its initial capacitance even after 10000 cycles. Such a facile strategy to fabricate the hierarchical CuO@MnO2 core-shell nanostructure with significantly improved functionalities opens up a novel avenue to design electrode materials on demand for high-performance supercapacitor applications. PMID:24682149

  10. Construction and characterization of nonenzymatic glucose sensor from recycling of Co, Cu and Mn from spent batteries

    International Nuclear Information System (INIS)

    Selvatici, Livia Serra; Favalessa, Luiza Botan; Loureiro, Eduardo dos Santos; Dixini, Pedro Vitor Morbach; Freitas, Marcos Benedito Jose de; Celante, Vinicius Guilherme

    2016-01-01

    Full text: In this work, Co, Cu and MnO 2 films were synthesized from the electrochemical recycling of spent Li-ion and alkaline batteries and applied as non-enzymatic electrochemical sensors for glucose determination in aqueous solution. The batteries were dismantled, physically separated into different constituents and leached solution of acetic acid 3:1 v/v. The films were synthesized in potentiostatic condition with E =-0.90 V and fixed charge density of 10 C.cm -2 on glassy carbon substrate with area equal to 3.0 mm 2 . Measurements of X-ray diffraction showed the Co structures (111), Cu (101) and MnO 2 (110). By analysis of scanning electron microscopy, a homogeneous coating of the surface was observed without the presence of surface irregularities. For energy dispersive X-ray, Co, Cu, Mn and O were observed. These films were subsequently used in determining glucose in aqueous solution by measures of successive voltammetric cycles in solutions of concentration varying from 0.1 to 0.5 g/l. These solutions were related to anodic peak current (I peak ), relative oxidation of glucose in glucolactona, the concentration of the solution, obtaining a linear correlation coefficient of 0.989. The sensor stability was measured in 20 voltammetric cycles in each solution, obtaining a correlation coefficient equal to 0978, being stable in the measurements. (author)

  11. Determination of Mn, Fe, and Cu in chemically-treated wood pulps by the XRF addition method

    Energy Technology Data Exchange (ETDEWEB)

    Raemoe, J.; Klasila, T.; Piepponen, S. [VTT Chemical Technology (Finland); Sillanpaeae, M. [Oulu Univ. (Finland)

    2001-08-01

    A rapid X-ray fluorescence addition method has been developed for quantification of the technically most important metals in wood pulp matrix (Mn, Fe, and Cu). Pretreatment consisted of just two steps: first, acid was added to the sample to achieve homogeneous distribution of the metals; the pulp was then pressed lightly on to Mylar film. Total analysis time was less than 10 min. The concentration range investigated was up to 15 mg kg{sup -1} for Mn and up to 5 mg kg{sup -1} for Fe and Cu. Metal concentrations in Scandinavian pulps are not expected to exceed these amounts. The quantification limit was 2 mg kg{sup -1} for all three metals. The reproducibilities and repeatabilities were concentration-dependent and varied between 3 and 19% and between 1 and 17%, respectively. The squares of the linear correlation coefficients between measured intensity and added metal concentration were 0.994, 0.950, and 0.932 for Mn, Fe, and Cu, respectively. (orig.)

  12. Free-standing hierarchical α-MnO2@CuO membrane for catalytic filtration degradation of organic pollutants.

    Science.gov (United States)

    Luo, Xinsheng; Liang, Heng; Qu, Fangshu; Ding, An; Cheng, Xiaoxiang; Tang, Chuyang Y; Li, Guibai

    2018-06-01

    Catalytic membrane, due to its compact reactor assembling, high catalytic performance as well as low energy consumption, has proved to be more attractive for wastewater treatment. In this work, a free-standing α-MnO 2 @CuO membrane with hierarchical nanostructures was prepared and evaluated as the catalytic membrane to generate radicals from peroxymonosulfate (PMS) for the oxidative degradation of organic dyes in aqueous solution. Benefiting from the high mass transport efficiency and the hierarchical nanostructures, a superior catalytic activity of the membrane was observed for organic dyes degradation. As a typical organic dye, more than 99% of methylene blue (MB) was degraded within 0.23 s using dead-end filtration cell. The effects of flow rate, PMS concentration and buffer solution on MB degradation were further investigated. Besides MB, the catalytic membrane also showed excellent performance for the removal of other dyes, such as congo red, methyl orange, rhodamine B, acid chrome blue K and malachite green. Moreover, the mechanism study indicated that OH and SO 4 - generated from the interaction between PMS and Mn/Cu species with different oxidation states mainly accounted for the dyes degradation. The catalytic filtration process using α-MnO 2 @CuO catalytic membrane could provide a novel method for wastewater purification with high efficiency and low energy consumption. Copyright © 2018 Elsevier Ltd. All rights reserved.

  13. Characterisation of the early stages of solute clustering in 1Ni-1.3Mn welds containing Cu

    Energy Technology Data Exchange (ETDEWEB)

    Hyde, J.M., E-mail: jonathan.hyde@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); National Nuclear Laboratory Ltd, B168 Harwell, Didcot, Oxon OX11 0QJ (United Kingdom); Burke, M.G. [Bechtel Bettis Inc., 814 Pittsburgh-McKeesport Blvd, West Mifflin, Pittsburgh 15122-0079 (United States); Boothby, R.M.; English, C.A. [National Nuclear Laboratory Ltd, B168 Harwell, Didcot, Oxon OX11 0QJ (United Kingdom)

    2009-04-15

    Microstructural characterisation of neutron irradiated low alloy steels is important for developing mechanistic understanding of irradiation embrittlement. This work is focused on the early stages of irradiation-induced clustering in a low Cu (0.03 wt%), high Ni ({approx}1 wt%) weld. The weld was irradiated at a very high dose rate and then examined by atom probe (energy-compensated position-sensitive atom probe (ECOPoSAP) and local electrode atom probe (LEAP)) with supporting microstructural information obtained by small angle neutron scattering (SANS) and positron annihilation (PALA). It was demonstrated that extreme care must be taken optimising parameters used to characterise the extent of clustering. This is particularly important during the early stages of irradiation-damage when the clusters are poorly defined and significant compositional variations are present in what is traditionally described as matrix. Analysis of the irradiated materials showed increasing clustering of Cu, Mn, Ni and Si with dose. In the low Cu steel the results showed that initially the irradiation damage results in clustering of Mn, Ni and Si, but at very high doses, at very high dose rates, redistribution of Si is significantly more advanced than that for Mn and Ni.

  14. Correlation between electron work functions of multiphase Cu-8Mn-8Al and de-alloying corrosion

    Science.gov (United States)

    Punburi, P.; Tareelap, N.; Srisukhumbowornchai, N.; Euaruksakul, C.; Yordsri, V.

    2018-05-01

    Low energy electron emission microscopy (LEEM) was used to measure local transition energy that was directly correlated to electron work function (EWF) of multiphase manganese-aluminum bronze alloys. We developed color mapping to distinguish the EWF of multiple phases and clarified that the EWF were in the following order: EWF of α > EWF of β > EWF of κ (EWFα > EWFβ > EWFκ). De-alloying corrosion took place due to the micro-galvanic cell at grain boundaries before it propagated into the β phase that had lower EWF than the α phase. The α phase was a stable phase because it contained high Cu while the β phase contained high Al and Mn. In addition, XRD analysis showed that the texture coefficient of the β phase revealed that almost all of the grains had (2 2 0) orientation, the lowest EWF compared to (1 1 1) and (2 0 0). Furthermore, transmission electron microscopy illustrated that there were fine Cu3Mn2Al precipitates in the Cu2MnAl matrix of the β phase. These precipitates formed micro-galvanic cells which played an important role in accelerating de-alloying corrosion.

  15. Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

    Directory of Open Access Journals (Sweden)

    Xingjie Jia

    2018-05-01

    Full Text Available Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ∼17.5 nm, and exhibits a high Bs of ∼1.75 T and a low Hc of ∼5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

  16. Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

    Science.gov (United States)

    Jia, Xingjie; Li, Yanhui; Wu, Licheng; Zhang, Wei

    2018-05-01

    Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D) of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc) by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs) is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ˜17.5 nm, and exhibits a high Bs of ˜1.75 T and a low Hc of ˜5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

  17. Theoretical study of EPR spectra in Cu2+ - and Mn2+ - doped CaCd(CH3COO)4.6H2O

    International Nuclear Information System (INIS)

    Zhou Yiyang; Zhao Minguang

    1987-08-01

    The EPR spectra of CaCd(CH 3 COO) 4 .6H 2 O doped with Cu 2+ and Mn 2+ have been studied theoretically. A comparison between the calculated results and the experimental data shows quantitatively that the Cu 2+ and Mn 2+ ions substitute for the Cd 2+ and Ca 2+ ions, respectively. This conclusion is consistent with the qualitative assumption given by previous authors. (author). 36 refs, 1 fig., 3 tabs

  18. Application of neutron activation analysis to evaluate the health status of equines by means of Cu, Fe, Mn and Zn determinations in their hair

    International Nuclear Information System (INIS)

    Armelin, M.J.A.; Avila, R.L.; Piasentin, R.M.; Saiki, M.

    2001-01-01

    Instrumental neutron activation analysis (INAA) was applied to evaluate the clinical status of equines, belonging to the Military Police of Sao Paulo State, by means of Cu, Fe, Mn and Zn determinations in their hair. Comparison of the results obtained in these analyses with reference values indicated Zn deficiency in the equines, Fe is in the minimum limit and the elements Cu and Mn are within the normal range. (author)

  19. X-ray study of CuGa sub x In sub 1-x Se sub 2 solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Suri, D.K.; Nagpal, K.C. (National Physical Lab., New Delhi (India). Materials Characterization Div.); Chadha, G.K. (Delhi Univ. (India). Dept. of Physics and Astrophysics)

    1989-12-01

    The semiconducting compound CuGa{sub x}In{sub 1-x}Se{sub 2} crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe{sub 2} and CuInSe{sub 2} can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 ({proportional to}1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa{sub 0.5}In{sub 0.5}Se{sub 2} solid solution. The JCPDS Diffraction File No. for CuInSe{sub 2} is 40-1487 and for CuGa{sub 0.5}In{sub 0.5}Se{sub 2} is 40-1488. (orig.).

  20. Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, J.; Du, H. W.; Li, Y.; Gao, M.; Wan, Y. Z.; Xu, F. [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai, 200444 (China); Ma, Z. Q., E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai, 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai, 200444 (China)

    2016-08-15

    The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se{sub 2} thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely V{sub Se}, In{sub Cu} and (In{sub Cu}+V{sub Cu}), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of E{sub C}-0.08, E{sub C}-0.20 and E{sub C}-0.25 eV, respectively. The In{sub Cu} and (In{sub Cu}+V{sub Cu}) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se{sub 2} layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (In{sub Cu}+V{sub Cu}) and V{sub se} defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se{sub 2} conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.

  1. The effect of magnetic stress and stiffness modulus on resonant characteristics of Ni-Mn-Ga ferromagnetic shape memory alloy actuators

    International Nuclear Information System (INIS)

    Techapiesancharoenkij, Ratchatee; Kostamo, Jari; Allen, Samuel M.; O'Handley, Robert C.

    2011-01-01

    The prospect of using ferromagnetic shape memory alloys (FSMAs) is promising for a resonant actuator that requires large strain output and a drive frequency below 1 kHz. In this investigation, three FSMA actuators, equipped with tetragonal off-stoichiometric Ni 2 MnGa single crystals, were developed to study their frequency response and resonant characteristics. The first actuator, labeled as A1, was constructed with low-k bias springs and one Ni-Mn-Ga single crystal. The second actuator, labeled as A2, was constructed with high-k bias springs and one Ni-Mn-Ga crystal. The third actuator, labeled as A3, was constructed with high-k bias springs and two Ni-Mn-Ga crystals connected in parallel. The three actuators were magnetically driven over the frequency range of 10 Hz-1 kHz under 2 and 3.5 kOe magnetic-field amplitudes. The field amplitude of 2 kOe is insufficient to generate significant strain output from all three actuators; the maximum magnetic-field-induced strain (MFIS) at resonance is 2%. The resonant MFIS output improves to 5% under 3.5-kOe amplitude. The frequency responses of all three actuators show a strong effect of the spring k constant and the Ni-Mn-Ga modulus stiffness on the resonant frequencies. The resonant frequency of the Ni-Mn-Ga actuator was raised from 450 to 650 Hz by increasing bias spring k constant and/or the number of Ni-Mn-Ga crystals. The higher number of the Ni-Mn-Ga crystals not only increases the magnetic force output but also raises the total stiffness of the actuator resulting in a higher resonant frequency. The effective modulus of the Ni-Mn-Ga is calculated from the measured resonant frequencies using the mass-spring equation; the calculated modulus values for the three actuators fall in the range of 50-60 MPa. The calculated effective modulus appears to be close to the average modulus value between the low twinning modulus and high elastic modulus of the untwined Ni-Mn-Ga crystal. - Highlights: → Dynamic FSMA actuation shows

  2. Interplay of phase sequence and electronic structure in the modulated martensites of Mn2NiGa from first-principles calculations

    Science.gov (United States)

    Kundu, Ashis; Gruner, Markus E.; Siewert, Mario; Hucht, Alfred; Entel, Peter; Ghosh, Subhradip

    2017-08-01

    We investigate the relative stability, structural properties, and electronic structure of various modulated martensites of the magnetic shape memory alloy Mn2NiGa by means of density functional theory. We observe that the instability in the high-temperature cubic structure first drives the system to a structure where modulation shuffles with a period of six atomic planes are taken into account. The driving mechanism for this instability is found to be the nesting of the minority band Fermi surface, in a similar way to that established for the prototype system Ni2MnGa . In agreement with experiments, we find 14M modulated structures with orthorhombic and monoclinic symmetries having energies lower than other modulated phases with the same symmetry. In addition, we also find energetically favorable 10M modulated structures which have not been observed experimentally for this system yet. The relative stability of various martensites is explained in terms of changes in the electronic structures near the Fermi level, affected mostly by the hybridization of Ni and Mn states. Our results indicate that the maximum achievable magnetic field-induced strain in Mn2NiGa would be larger than in Ni2MnGa . However, the energy costs for creating nanoscale adaptive twin boundaries are found to be one order of magnitude higher than that in Ni2MnGa .

  3. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  4. Red-blue effect in Cu(In,Ga)Se2-based devices revisited

    International Nuclear Information System (INIS)

    Igalson, M.; Urbaniak, A.; Zabierowski, P.; Maksoud, H. Abdel; Buffiere, M.; Barreau, N.; Spiering, S.

    2013-01-01

    The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se 2 -based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In 2 S 3 -buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light. - Highlights: ► High-energy photons improve fill factor in Cu(In,Ga)Se 2 -based solar cells. ► The effect is demonstrated on three types of buffer layers. ► Fill factor improvement under blue light is correlated with a decrease of doping. ► p + layer is the main cause of fill factor deficiency under red light

  5. Red-blue effect in Cu(In,Ga)Se{sub 2}-based devices revisited

    Energy Technology Data Exchange (ETDEWEB)

    Igalson, M., E-mail: igalson@if.pw.edu.pl [Warsaw University of Technology, Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland); Urbaniak, A.; Zabierowski, P.; Maksoud, H. Abdel [Warsaw University of Technology, Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland); Buffiere, M.; Barreau, N. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 3 (France); Spiering, S. [Zentrum fur Sonnenenergie-und Wasserstoff-Forschung (ZSW) Baden-Württemberg, Industriestrasse 6, 70565 Stuttgart (Germany)

    2013-05-01

    The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se{sub 2}-based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In{sub 2}S{sub 3}-buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light. - Highlights: ► High-energy photons improve fill factor in Cu(In,Ga)Se{sub 2}-based solar cells. ► The effect is demonstrated on three types of buffer layers. ► Fill factor improvement under blue light is correlated with a decrease of doping. ► p + layer is the main cause of fill factor deficiency under red light.

  6. Sub-band-gap absorption of Cu(In,Ga)Se{sub 2} thin film semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Meessen, Max; Brueggemann, Rudolf; Bauer, Gottfried H. [Carl von Ossietzky University Oldenburg (Germany)

    2012-07-01

    The sub-band-gap absorption of Cu(In,Ga)Se{sub 2} thin films has been studied by photothermal deflection spectroscopy (PDS) in conjunction with optical transmittance spectroscopy. The resulting absorption coefficients are compared to those calculated from photoluminescence spectra using Planck's generalized law. Quantities related to the absorption like Urbach energy and defect densities are derived from the absorption curves. This concept has been applied to a series of bromine-methanol etched Cu(In{sub x-1},Ga{sub x})Se{sub 2} (x=0.3) absorbers with varying thicknesses. A shift in the band gap is observed with both methods and can be related to the gallium gradient in the samples. In contrast, the Urbach energy and defect absorption values are not substantially affected by the etching process. The influence of CdS buffer layers or highly thermally conductive metallic back contacts on PDS results is studied by measuring nominally identical samples with and without those layers.

  7. Characterization of as-grown and Ge-ion implanted CuGaSe{sub 2} thin films prepared by the CCSVT technique

    Energy Technology Data Exchange (ETDEWEB)

    Doka Yamigno, Serge

    2006-08-15

    Single phase polycrystalline thin films of CuGaSe{sub 2} in the compositional range of 1.0=[Ga]/[Cu]=1.3, corresponding to a thickness ranging from 1.6 {mu}m to 1.9 {mu}m deposited onto plain or Mo-coated soda lime glass (SLG) were prepared and found to be polycrystalline with a strongly preferred <221> orientation. A combination of microstructural investigations of the films by TEM, EDX within the TEM and ERDA measurements has shown that CuGaSe{sub 2} thin films possess high crystalline bulk quality with Cu, Ga and Se homogeneously distributed within the CuGaSe{sub 2} bulk. One of the main result of this present work was found to be the accumulation of Ga in the region of the CuGaSe2/Mo interface and the dependence of the CuGaSe{sub 2} surface composition on the integral [Ga]/[Cu] ratio in the film, namely Ga- and Cu-poor, Se-rich surface for stoichiometric films; and Cu- poor, and Ga- and Se- rich surface for increasing [Ga]/[Cu] ratios. These observations were also supported by optical measurements carried out through photoluminescence and absorption measurements. In order to gain a better understanding of the influence of the extrinsic doping of the CuGaSe{sub 2} films and why many attempts towards the type inversion in the p-type CuGaSe2 compounds by varying the composition or by doping with extrinsic defects have failed, ion implantation was used to introduce Ge into CuGaSe{sub 2}. Photoluminescence of the Ge containing films has evidenced the presence of new defects such as donor levels in the band gap. Electron spin resonance measurements of the Ge- containing CuGaSe2 films has highlighted an additional ESR resonance observed at g=2.003 ascribed to donors. However, Curie paramagnetism up to room temperature for all the Ge implanted films, characteristic of localized states has been observed for this resonance. (orig.)

  8. Teores de Fe, Mn, Zn, Cu, Ni E Co em solos de referência de Pernambuco

    Directory of Open Access Journals (Sweden)

    Caroline Miranda Biondi

    2011-06-01

    Full Text Available Metais pesados formam um grupo de elementos com particularidades relevantes e de ocorrência natural no ambiente, como elementos acessórios na constituição de rochas. Esses elementos, apesar de associados à toxidez, exigem tratamento diferenciado em relação aos xenobióticos, uma vez que diversos metais possuem essencialidade (Fe, Mn, Cu, Zn e Ni e benefício (Co comprovados para as plantas. Nesse contexto, o objetivo deste trabalho foi determinar os teores naturais dos metais Fe, Mn, Zn, Ni, Cu e Co nos solos de referência de Pernambuco. Foram coletadas amostras de solo nas três regiões fisiográficas (Zona da Mata, Agreste e Sertão, dos dois primeiros horizontes dos 35 solos de referência do Estado de Pernambuco. A digestão das amostras baseou-se no método 3051A (USEPA, 1998, e a determinação foi efetuada em ICP-OES. Correlações significativas foram estabelecidas entre os metais e entre estes e a fração argila do solo, em ambos os horizontes, indicando a associação comum da maioria dos metais com solos mais argilosos. A maioria dos solos apresentou teores de Fe, Mn, Zn, Cu, Ni e Co menores que os de solos de outras regiões do País, com litologia mais máfica, o que corrobora o fato de que os teores desses elementos são mais diretamente relacionados aos minerais Fe-magnesianos. Os resultados indicam baixo potencial dos solos de Pernambuco em liberar Cu, Co e Ni para plantas, enquanto deficiências de Zn, Fe e Mn são menos prováveis. Os teores naturais de Fe, Mn, Zn, Cu, Ni e Co determinados podem ser utilizados como base para definição dos Valores de Referência de Qualidade para os solos de Pernambuco, de acordo com o preconizado pela legislação nacional.

  9. Ab initio prediction of stable nanotwin double layers and 4O structure in Ni.sub.2./sub.MnGa

    Czech Academy of Sciences Publication Activity Database

    Zelený, M.; Straka, Ladislav; Sozinov, A.; Heczko, Oleg

    2016-01-01

    Roč. 94, č. 22 (2016), s. 1-6, č. článku 224108. ISSN 2469-9950 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 Keywords : ab initio * magnetic shape memory * martensite * modulation * Ni-Mn-Ga Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  10. Ellipsometry applied to phase transitions and relaxation phenomena in Ni.sub.2./sub.MnGa ferromagnetic shape memory alloy

    Czech Academy of Sciences Publication Activity Database

    Dejneka, Alexandr; Zablotskyy, Vitaliy A.; Tyunina, Marina; Jastrabík, Lubomír; Pérez-Landazábal, J.I.; Recarte, V.; Sánchez-Alarcos, V.; Chernenko, V.A.

    2012-01-01

    Roč. 101, č. 14 (2012), "141908-1"-"141908-5" ISSN 0003-6951 R&D Projects: GA TA ČR TA01010517; GA ČR GAP108/12/1941 Institutional research plan: CEZ:AV0Z10100522 Keywords : shape memory alloy * ellipsometry * Ni 2 MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.794, year: 2012 http://dx.doi.org/10.1063/1.4757393

  11. Defects in Cu(InGa)Se2/CdS heterostructure films induced by hydrogen ion implantation

    International Nuclear Information System (INIS)

    Yakushev, M.V.; Tomlinson, R.D.; Hill, A.E.; Pilkington, R.D.; Mudryi, A.V.; Bondar, I.V.; Victorov, I.A.; Gremenok, V.F.; Shakin, I.A.; Patuk, A.I.

    1999-01-01

    The influence of H + ion implantation on the photoluminescence properties of Cu(InGa)Se 2 /CdS heterostructures has been studied. This treatment was found to increase the photoluminescence intensity of donor-acceptor band at 1.13 eV because of the passivation by hydrogen atoms of the non-radiative recombination centers on the boundary of Cu(InGa)Se 2 and CdS layers. Two broad bands peaks at 0.96 eV and at 0.82 eV in photoluminescence spectra of ion-implanted Cu(InGa)Se 2 films have been found. The tentative model to explain the origin of the broad photoluminescence bands has been discussed

  12. First-principles study of direct and narrow band gap semiconducting β-CuGaO2

    International Nuclear Information System (INIS)

    Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; Ho, Kai-Ming

    2015-01-01

    Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO 2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO 2 phase. Our calculations show that the β-CuGaO 2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point of Brillouin zone. The optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment. (paper)

  13. Determination of Na, Mn and Cu in cocoon, raw silk and degummed silk by nondestructive activation analysis

    Energy Technology Data Exchange (ETDEWEB)

    Maki, Y; Ishiguro, Y [Industrial Research Inst. of Kanagawa Prefecture, Yokohama (Japan)

    1976-01-01

    The sodium, manganese and copper contained in cocoons, raw silk and degummed silk thread were determined by the nondestructive activation analysis. After each sample was irradiated with the thermal neutron flux of 5 x 10/sup 11/n/cm/sup 2/.sec, its ..gamma..-ray spectrum was measured with a NaI(Tl) detector. With the photoelectric peaks at 511 keV (/sup 64/Cu), 1368 keV (/sup 24/Na) and 847 keV (/sup 56/Mn), each element was quantitatively determined and its content was obtained. The measurement of the ..gamma..-ray spectra of samples with a Ge (Li) detector proved the presence of An, Sb, Fe, Zn, Cr, Sc, Co, etc. Large amounts of Na and Cu were detected in the sericin portion of cocoons, and the adhesion of Cu from a reeling-off machine to raw silk was also observed during the process of degumming cocoons to make raw silk.

  14. Magnet properties of Mn{sub 70}Ga{sub 30} prepared by cold rolling and magnetic field annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ener, Semih, E-mail: ener@fm.tu-darmstadt.de [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Skokov, Konstantin P. [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Karpenkov, Dmitriy Yu. [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Faculty of Physics, Tver State University, 170100 Tver (Russian Federation); Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Kuz' min, Michael D. [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gutfleisch, Oliver [Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Fraunhofer IWKS, Project Group for Material Cycles and Resource Strategy, 63457 Hanau (Germany)

    2015-05-15

    The remanence and coercivity of arc melted Mn{sub 70}Ga{sub 30} can be substantially improved by cold rolling. For best performance the rolled material should be annealed at T=730 K in the presence of a magnetic field of 1 T. The so-obtained magnet has a remanence of 0.239 T and a coercivity of 1.24 T at room temperature. The underlying reason for the high coercivity and remanence is the increase of the content of a metastable ferrimagnetic D0{sub 22} phase at the expense of the normally stable anti-ferromagnetic D0{sub 19}. Magnetic field significantly increases the nucleation rate of the ferromagnetic D0{sub 22} phase that leads to grain size refinement and as a consequence of improving remanence and coercive field. - Highlights: • Alternative synthesis method for D0{sub 22} phase formation in Mn–Ga is developed. • Effect of cold rolling and annealing on magnetic properties of Mn{sub 70}Ga{sub 30} is examined. • Small magnetic fields are sufficient to accelerate nucleation of the D0{sub 22} phase.

  15. Hydrostatic pressure effect on the magnetocaloric behavior of Ga-doped MnNiGe magnetic equiatomic alloy

    International Nuclear Information System (INIS)

    Dutta, P; Das, D; Chatterjee, S; Pramanick, S; Majumdar, S

    2016-01-01

    The magnetocaloric properties of a new class of ferromagnetic shape memory alloys of nominal composition MnNiGe 0.928 Ga 0.072 have been investigated in ambient conditions as well as in the presence of external hydrostatic pressure. Both inverse (6.35 Jkg −1 K −1 for 0  −  50 kOe around 160 K) and conventional (−4.54 Jkg −1 K −1 for 0–50 kOe around 210 K) magnetocaloric effects (MCEs) have been observed around the structural and magnetic transitions respectively. The sample can be thought of as being derived from the parent MnNiGe alloy, where Ga was doped at the expense of the Ge atom. Ga doping at Ge sites brings down the martensitic transition temperature to below room temperature and induces ferromagnetism by affecting the lattice volume of the alloy. However, below the first-order martensitic transition the alloy loses its ferromagnetism. Application of external hydrostatic pressure results in a revival of ferromagnetic interactions in the martensitic phase of the alloy and a considerable increase in the refrigeration capacity around the conventional MCE region. (paper)

  16. The Influence of Cu Addition on Dispersoid Formation and Mechanical Properties of Al-Mn-Mg 3004 Alloy

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2018-03-01

    Full Text Available The effect of Cu addition on dispersoid precipitation, mechanical properties and creep resistance was investigated in an Al-Mn-Mg 3004 alloy. The addition of Cu promoted dispersoid precipitation by increasing the number density and decreasing the size of dispersoids. Metastable β′-Mg2Si and Q-AlCuMgSi precipitates were observed during the heating process and both could provide favorable nucleation sites for dispersoid precipitation. The addition of Cu improved the thermal stability of dispersoids during a long-term thermal holding at 350 °C for 500 h. Results of mechanical testing show that the addition of Cu remarkably improved the hardness at room temperature, as well as the yield strength and creep resistance at 300 °C, which was mainly attributed to dispersoid strengthening and Cu solid solution strengthening. The yield strength contribution at 300 °C was quantitatively evaluated based on the dispersoid, solid solution and matrix contributions. It was confirmed that dispersoid strengthening is the main strengthening mechanism in the experimental alloys.

  17. Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Kub, Jiří; Máca, František; Mašek, Jan; Pacherová, Oliva; Rushforth, A.W.; Gallagher, B. L.; Campion, R. P.; Novák, Vít; Jungwirth, Tomáš

    2011-01-01

    Roč. 83, č. 23 (2011), , , "235324-1"-"235324-7" ISSN 1098-0121 R&D Projects: GA AV ČR IAA100100912; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : ferrmagnetic semiconductor * crystal structure * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011 http://prb.aps.org/abstract/PRB/v83/i23/e235324

  18. Magnetic anisotropy of MnAs-films on GaAs(0 0 1) studied with ferromagnetic resonance

    International Nuclear Information System (INIS)

    Lindner, J.; Tolinski, T.; Lenz, K.; Kosubek, E.; Wende, H.; Baberschke, K.; Ney, A.; Hesjedal, T.; Pampuch, C.; Koch, R.; Daeweritz, L.; Ploog, K.H.

    2004-01-01

    Thin films of MnAs grown on GaAs(0 0 1) show a self-organized structure of coexisting ferromagnetic α- and paramagnetic β-MnAs stripes in the temperature interval from 10 to 40 deg. C. We quantify the magnetic anisotropies of the α-stripes via ferromagnetic resonance and superconducting quantum interference device magnetometry for samples with thicknesses of 57 and 165 nm. The easy axis of magnetization is found to be located perpendicular to the stripe direction, whereas the direction parallel to the stripes is a hard one. While the intrinsic anisotropies show a bulk-like behavior and explain the direction of the hard axis, the key to understanding the direction of the easy axis is given by the demagnetizing fields due to the stripe formation

  19. Evaporación de Cu(In,GaSe2 en lámina delgada para aplicaciones fotovoltaicas

    Directory of Open Access Journals (Sweden)

    Guillén, C.

    2004-04-01

    Full Text Available The aim of this work is to study the structural and optical properties of Cu(In,GaSe2 (CIGS thin films after thermal and chemical treatments. Cu(In,GaSe2 thin films have been obtained by means of the selenization in vacuum or Ar of the metallic precursors evaporated sequentially. The sequence of evaporation was In/Ga/Cu/In. Single-phase chalcopyrite and polycrystalline CIGS films with (112 preferred orientation were obtained. An improvement in the crystallite feature and optical properties is observed after Ar selenization. Band gap energies, Eg, between 0.98 and 1.10 were obtained for different atomic ratios, being dominated by the Ga content. Thin films high absorption coefficient was reduced in band tails, specially when Cu content increases after chemical treatment in KCN.El objetivo de este trabajo es estudiar las propiedades estructurales y ópticas del Cu(In,GaSe2 (CIGS en lámina delgada tras diferentes tratamientos térmicos y químicos. El Cu(In,GaSe2 se ha obtenido mediante la selenización en vacío o Ar de los precursores metálicos evaporados secuencialmente. La secuencia de evaporación seguida fue In/Ga/Cu/In. Se obtuvieron láminas policristalinas de CIGS con estructura calcopirita fuertemente orientada en la dirección (112. Se observó una mejora de la naturaleza cristalina y de las propiedades ópticas tras la selenización en Ar. Se obtuvieron energías de banda prohibida, Eg, entre 0.98 y 1.10 eV para las diferentes relaciones atómicas, estando dominadas por el contenido de Ga. Se consiguió reducir la alta absorción por colas de banda de las láminas delgadas, especialmente cuando aumentaba el contenido de Cu, tras un tratamiento químico en KCN.

  20. Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni2 Alloy Shunts

    Directory of Open Access Journals (Sweden)

    Siti Nabilah Misti

    2017-07-01

    Full Text Available This paper studies the effect of abrasive trimming on the electrical properties of Cu86Mn12Ni2 Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR, high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part.