Sample records for crystalline sns nanowire
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Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays
Directory of Open Access Journals (Sweden)
Yue GH
2009-01-01
Full Text Available Abstract The SnS nanowire arrays have been successfully synthesized by the template-assisted pulsed electrochemical deposition in the porous anodized aluminum oxide template. The investigation results showed that the as-synthesized nanowires are single crystalline structures and they have a highly preferential orientation. The ordered SnS nanowire arrays are uniform with a diameter of 50 nm and a length up to several tens of micrometers. The synthesized SnS nanowires exhibit strong absorption in visible and near-infrared spectral region and the direct energy gapE gof SnS nanowires is 1.59 eV.
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Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics
Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag
2018-05-01
Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.
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Electrochemical synthesis of highly crystalline copper nanowires
International Nuclear Information System (INIS)
Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup
2015-01-01
Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits
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Orientation-controlled synthesis and magnetism of single crystalline Co nanowires
International Nuclear Information System (INIS)
Huang, Gui-Fang; Huang, Wei-Qing; Wang, Ling-Ling; Zou, B.S.; Pan, Anlian
2012-01-01
Orientation control and the magnetic properties of single crystalline Co nanowires fabricated by electrodeposition have been systematically investigated. It is found that the orientation of Co nanowires can be effectively controlled by varying either the current density or the pore diameter of AAO templates. Lower current density or small diameter is favorable for forming the (1 0 0) texture, while higher current values or larger diameter leads to the emergence and enhancement of (1 1 0) texture of Co nanowires. The mechanism for the manipulated growth characterization is discussed in detail. The orientation of Co nanowires has a significant influence on the magnetic properties, resulting from the competition between the magneto-crystalline and shape anisotropy of Co nanowires. This work offers a simple method to manipulate the orientation and magnetic properties of nanowires for future applications. - Highlights: ► Single crystalline Co nanowires have successfully been grown by DC electrodeposition. ► Orientation controlling and its effect on magnetism of Co nanowires were investigated. ► The orientation of Co nanowires can be effectively controlled by varying current density. ► The crystalline orientation of Co nanowires has significant influence on the magnetic properties.
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Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires
Directory of Open Access Journals (Sweden)
E. Karageorgou
2014-11-01
Full Text Available SnO2 and Sn:In2O3 nanowires were grown on Si(001, and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.
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Synthesis and characterization of single-crystalline zinc tin oxide nanowires
Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin
2014-05-01
Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.
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Zeeshan, M. A.; Esqué-de Los Ojos, D.; Castro-Hartmann, P.; Guerrero, M.; Nogués, J.; Suriñach, S.; Baró, M. D.; Nelson, B. J.; Pané, S.; Pellicer, E.; Sort, J.
2016-01-01
The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices.The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires
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Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires
DEFF Research Database (Denmark)
Baets, R.; Kuyken, B.; Liu, X.
2012-01-01
Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....
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Self-diffusion in single crystalline silicon nanowires
Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.
2018-04-01
Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.
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Wang, Hui; Lan, Yucheng; Zhang, Jiaming; Crimp, Martin A; Ren, Zhifeng
2012-04-01
Long beta-Ga2O3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown beta-Ga2O3 nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline beta-Ga2O3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into beta-Ga2O3 nanowire stems several ten nanometers. A solid diffusion growth mechanism is proposed based on the spatial elemental distribution along the beta-Ga2O3 nanowires at nanoscale.
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A novel method for preparing vertically grown single-crystalline gold nanowires
International Nuclear Information System (INIS)
Tung, H-T; Nien, Y-T; Chen, I-G; Song, J-M
2008-01-01
A surfactant-free, template-less and seed-less method, namely the thermal-assisted photoreduction (TAP) process, has been developed to synthesize vertically grown Au nanowires (30-80 nm in diameter and about 2 μm in length) on the surface of thin film titanium dioxide (TiO 2 ), which is locally excited by blackbody radiation. The Au nanowires thus produced are single-crystalline with a preferred [11 bar 0] growth direction. The electrical behavior investigated using a nanomanipulation device indicates that the Au nanowires possess an excellent electrical resistivity of about 3.49 x 10 -8 Ω m.
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Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire
International Nuclear Information System (INIS)
Kim, Jeongmin; Lee, Seunghyun; Kim, MinGin; Lee, Wooyoung; Brovman, Yuri M.; Kim, Philip
2014-01-01
We present the low temperature transport properties of an individual single-crystalline Bi nanowire grown by the on-film formation of nanowire method. The temperature dependent resistance and magnetoresistance of Bi nanowires were investigated. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. The obtained temperature dependence of phase coherence length and the fluctuation amplitude indicates that the transport of electrons shows 2-dimensional characteristics originating from the surface states. The temperature dependence of the coherence length derived from the weak antilocalization effect using the Hikami–Larkin–Nagaoka model is consistent with that from the universal conductance fluctuations theory
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Crystalline Symmetry-Protected Majorana Mode in Number-Conserving Dirac Semimetal Nanowires
Zhang, Rui-Xing; Liu, Chao-Xing
2018-04-01
One of the cornerstones for topological quantum computations is the Majorana zero mode, which has been intensively searched in fractional quantum Hall systems and topological superconductors. Several recent works suggest that such an exotic mode can also exist in a one-dimensional (1D) interacting double-wire setup even without long-range superconductivity. A notable instability in these proposals comes from interchannel single-particle tunneling that spoils the topological ground state degeneracy. Here we show that a 1D Dirac semimetal (DSM) nanowire is an ideal number-conserving platform to realize such Majorana physics. By inserting magnetic flux, a DSM nanowire is driven into a 1D crystalline-symmetry-protected semimetallic phase. Interaction enables the emergence of boundary Majorana zero modes, which is robust as a result of crystalline symmetry protection. We also explore several experimental consequences of Majorana signals.
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Huang, Xiaohu
2013-01-01
Understanding and measuring the size-dependent surface strain of nanowires are essential to their applications in various emerging devices. Here, we report on the diameter-dependent surface strain and Young\\'s modulus of single-crystalline Co nanowires investigated by in situ X-ray diffraction measurements. Diameter-dependent initial longitudinal elongation of the nanowires is observed and ascribed to the anisotropic surface stress due to the Poisson effect, which serves as the basis for mechanical measurements. As the nanowire diameter decreases, a transition from the "smaller is softer" regime to the "smaller is tougher" regime is observed in the Young\\'s modulus of the nanowires, which is attributed to the competition between the elongation softening and the surface stiffening effects. Our work demonstrates a new nondestructive method capable of measuring the initial surface strain and estimating the Young\\'s modulus of single crystalline nanowires, and provides new insights on the size effect. © 2013 The Royal Society of Chemistry.
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Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min
2013-05-06
Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.
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Single-crystalline self-branched anatase titania nanowires for dye-sensitized solar cells
Li, Zhenquan; Yang, Huang; Wu, Fei; Fu, Jianxun; Wang, Linjun; Yang, Weiguang
2017-03-01
The morphology of the anatase titania plays an important role in improving the photovoltaic performance in dye-sensitized solar cells. In this work, single-crystalline self-branched anatase TiO2 nanowires have been synthesized by hydrothermal method using TBAH and CTAB as morphology controlling agents. The obtained self-branched TiO2 nanowires dominated by a large percentage of (010) facets. The photovoltaic conversion efficiency (6.37%) of dye-sensitized solar cell (DSSC) based on the self-branched TiO2 nanowires shows a significant improvement (26.6%) compared to that of P25 TiO2 (5.03%). The enhanced performance of the self-branched TiO2 nanowires-based DSSC is due to heir large percent of exposed (010) facets which have strong dye adsorption capacity and effective charge transport of the self-branched 1D nanostructures.
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A simple route to the synthesis of single crystalline copper metagermanate nanowires
Energy Technology Data Exchange (ETDEWEB)
Pei, L.Z., E-mail: lzpei@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhang Qianfeng; Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)
2009-12-15
Single crystalline copper metagermanate (CuGeO{sub 3}) nanowires with the diameter of 30-300 nm and length of longer than 100 {mu}m have been prepared by a simple hydrothermal deposition route. X-ray diffraction (XRD), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman analyses confirm that the nanowires are orthorhombic single crystals with a main growth direction along <101>. Room temperature photoluminescence (PL) measurement shows a strong blue emission peak at 442 nm with a broad emission band. The blue emission may be ascribed to radiative recombination of oxygen vacancies and oxygen-germanium vacancies. The formation process of CuGeO{sub 3} nanowires is also discussed.
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Ionic liquid-assisted sonochemical synthesis of SnS nanostructures
Energy Technology Data Exchange (ETDEWEB)
García-Gómez, Nora A.; Parra-Arcieniega, Salomé M. de la; Garza-Tovar, Lorena L.; Torres-González, Luis C.; Sánchez, Eduardo M., E-mail: eduardo.sanchezcv@uanl.edu.mx
2014-03-05
Highlight: • Obtention of SnS nanostructures using novel ionic liquid assisted sonochemical method. • Influence of the (BMImBF{sub 4}) ionic liquid in SnS morphology. • Inhibitory effect in SnS crystallinity by structuring agents in ionic environments. -- Abstract: SnS nanoparticles have been successfully synthesized by the ionic liquid-assisted sonochemical method (ILASM). The starting reagents were anhydrous SnCl{sub 2}, thioacetamide, dissolved in ethanol and ionic liquid (IL)1-butyl-3-methylimidazolium tetrafluoroborate (BMImBF{sub 4}) mixtures. Our experiments showed that IL plays an important role in the morphology of SnS. A 1:1 ethanol:IL mixture was found to yield the more interesting features. The lower concentration of Sn (II) in solution favored the presence of nanoplatelets. An increase in ultrasonic time favored crystalline degree and size as well. Also, the effect of additives as 3-mercaptopropionic acid, diethanolamine, ethylene glycol, and trioctyl phosphine oxide is reported. X-ray diffraction (XRD) and ultraviolet–visible diffuse reflectance spectroscopy (UV–Vis-DRS) were used to characterize the obtained products.
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Synthesis of single crystalline CdS nanowires with polyethylene glycol 400 as inducing template
Institute of Scientific and Technical Information of China (English)
无
2006-01-01
Solvothermal technique, an one-step soft solution-processing route was successfully employed to synthesize single crystalline CdS nanowires in ethylenediamine medium at lower temperature (170 □) for 1-8 d. In this route, polyethylene glycol 400 (PEG400)was used as surfactant, which played a crucial role in preferentially oriented growth of semiconductor nanowires. Characterizations of as-prepared CdS nanowires by X-ray powder diffraction(XRD), transmission electron microscopy(TEM) indicate that the naonowires,with typical diameters of 20nm and lengths up to several micrometers, have preferential [001] orientation. Also, investigations into the physical properties of the CdS nanowires were conducted with UV-Vis absorption spectroscopy and photoluminescence emission spectroscopy. The excitonic photo-optical phenomena of the nanowires shows the potential in the practical applications.
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Directory of Open Access Journals (Sweden)
Mohammad Taghi Satoungar
2016-01-01
Full Text Available Synthesis and characterization of multiple crystalline silver nanowires (NWs with uniform diameters were carried out by using 1,2-propandiol and ethylene glycol (EG as comediated solvents and FeCl3 as mediated agent in the presence of poly(vinyl pyrrolidone (PVP. Experimental data and structural characterizations revealed that AgNWs have evolved from the multiple crystalline seeds initially generated by reduction of AgNO3 with EG and 1,2-propandiol followed by reducing Fe(III to Fe(II which in turn reacts with and removes adsorbed atomic oxygen from the surfaces of silver seeds. In addition, uniform silver nanowires were obtained by using FeCl2 and AlCl3 as mediated agents in EG solution. Field emission scanning electron microscopy (FESEM and transmission electron microscopy (TEM showed uniform nanowires in both diameter and length. UV-Vis spectra showed adsorption peaks confirming the formation of nanowires. X-ray diffraction (XRD patterns displayed the final product with high crystallinity and purity. In this study, a growth mechanism for forming AgNWs was proposed and a comparison between different mediated agents was carried out.
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Cui, Li-Feng
2009-01-14
Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.
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Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires
Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng
2011-01-01
Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020
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Effect of thickness on optical properties of thermally evaporated SnS films
International Nuclear Information System (INIS)
Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.
2013-01-01
The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness
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Phase-tunable Majorana bound states in a topological N-SNS junction
DEFF Research Database (Denmark)
Hansen, Esben Bork; Danon, Jeroen; Flensberg, Karsten
2016-01-01
We theoretically study the differential conductance of a one-dimensional normal-superconductor-normal-superconductor (N-SNS) junction with a phase bias applied between the two superconductors. We consider specifically a junction formed by a spin-orbit coupled semiconducting nanowire with regions ...
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Controlling growth density and patterning of single crystalline silicon nanowires
International Nuclear Information System (INIS)
Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi
2010-01-01
This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.
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Thioglycolic acid (TGA) assisted hydrothermal synthesis of SnS nanorods and nanosheets
International Nuclear Information System (INIS)
Biswas, Subhajit; Kar, Soumitra; Chaudhuri, Subhadra
2007-01-01
Nanorods and nanosheets of tin sulfide (SnS) were synthesized by a novel thioglycolic acid (TGA) assisted hydrothermal process. The as prepared nanostructures were characterized by X-ray diffraction (XRD) study, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD study reveals the formation of well-crystallized orthorhombic structure of SnS. Diameter of the SnS nanorods varied within 30-100 nm. High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) patterns identify the single crystalline nature for the SnS nanocrystals. The mechanism for the TGA assisted growth for the nanosheets and nanorods have been discussed
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TiO2-SnS2 nanocomposites: solar-active photocatalytic materials for water treatment.
Kovacic, Marin; Kusic, Hrvoje; Fanetti, Mattia; Stangar, Urska Lavrencic; Valant, Matjaz; Dionysiou, Dionysios D; Bozic, Ana Loncaric
2017-08-01
The study is aimed at evaluating TiO 2 -SnS 2 composites as effective solar-active photocatalysts for water treatment. Two strategies for the preparation of TiO 2 -SnS 2 composites were examined: (i) in-situ chemical synthesis followed by immobilization on glass plates and (ii) binding of two components (TiO 2 and SnS 2 ) within the immobilization step. The as-prepared TiO 2 -SnS 2 composites and their sole components (TiO 2 or SnS 2 ) were inspected for composition, crystallinity, and morphology using Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM/EDX) analyses. Diffuse reflectance spectroscopy (DRS) was used to determine band gaps of immobilized TiO 2 -SnS 2 and to establish the changes in comparison to respective sole components. The activity of immobilized TiO 2 -SnS 2 composites was tested for the removal of diclofenac (DCF) in aqueous solution under simulated solar irradiation and compared with that of single component photocatalysts. In situ chemical synthesis yielded materials of high crystallinity, while their morphology and composition strongly depended on synthesis conditions applied. TiO 2 -SnS 2 composites exhibited higher activity toward DCF removal and conversion in comparison to their sole components at acidic pH, while only in situ synthesized TiO 2 -SnS 2 composites showed higher activity at neutral pH.
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Huang, Xiaohu; Li, Guanghai; Kong, Lingbing; Huang, Yizhong; Wu, Tao
2013-01-01
Understanding and measuring the size-dependent surface strain of nanowires are essential to their applications in various emerging devices. Here, we report on the diameter-dependent surface strain and Young's modulus of single-crystalline Co
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Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation
International Nuclear Information System (INIS)
Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook
2017-01-01
Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.
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Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation
Energy Technology Data Exchange (ETDEWEB)
Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr
2017-04-30
Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.
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Synthesis, structure and optical properties of single-crystalline In{sub 2}O{sub 3} nanowires
Energy Technology Data Exchange (ETDEWEB)
Hadia, N.M.A., E-mail: nomery_abass@yahoo.com [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Mohamed, H.A. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); King Saud University, Teachers College, Science Department (Physics), 11148 Riyadh (Saudi Arabia)
2013-01-15
Highlights: Black-Right-Pointing-Pointer Metal and metal oxide one dimensional (1D) nanostructured materials are of crucial importance. Black-Right-Pointing-Pointer The paper deals with the synthesis of In{sub 2}O{sub 3} nanowires without the use of catalysts. Black-Right-Pointing-Pointer The optical constants and Photoluminescence (PL) of In{sub 2}O{sub 3} nanowires were evaluated. - Abstract: Indium oxide In{sub 2}O{sub 3} nanowires have been recently synthesized revealing interesting properties and used in various applications. In order to reduce as much as possible the influence of undesired dopants and/or impurities on the observed properties, In{sub 2}O{sub 3} nanowires have been grown without the use of catalysts, directly from metallic indium by a vapor transport technique and a controlled oxidation with oxygen-argon mixtures. Depending on the growth conditions (temperature, vapor pressure, oxygen concentration, etc.) different results have been achieved and it has been observed that a 'proper' In condensation on the substrates may enhance the nanowires growth. Detailed structural analysis showed that the In{sub 2}O{sub 3} nanostructures are single crystalline with a cubic crystal structure. The grown In{sub 2}O{sub 3} nanowires were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index and extinction coefficient. Room temperature Photoluminescence (PL) spectrum showed broad and intense blue emission at 375 nm.
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International Nuclear Information System (INIS)
Qiu Penghe; Mao Chuanbin
2009-01-01
We studied the kinetics of the reduction of a gold precursor (HAuCl 4 ) and the effect of the molar ratio (R) of sodium citrate, which was introduced from a seed solution, and the gold precursor on the shape evolution of gold nanomaterials in the presence of preformed 13 nm gold nanoparticles as seeds. The reduction of the gold precursor by sodium citrate was accelerated due to the presence of gold seeds. Nearly single-crystalline gold nanowires were formed at a very low R value (R = 0.16) in the presence of the seeds as a result of the oriented attachment of the growing gold nanoparticles. At a higher R value (R = 0.33), gold nanochains were formed due to the non-oriented attachment of gold nanoparticles. At a much higher R value (R = 1.32), only larger spherical gold nanoparticles grown from the seeds were found. In the absence of gold seeds, no single-crystalline nanowires were formed at the same R value. Our results indicate that the formation of the 1D nanostructures (nanochains and nanowires) at low R values is due to the attachment of gold nanoparticles along one direction, which is driven by the surface energy reduction, nanoparticle attraction, and dipole-dipole interaction between adjacent nanoparticles.
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Lee, Dongjin; Jeon, H. C.; Kang, T. W.; Kumar, Sunil
2018-03-01
Indium tin oxide (ITO) is a suitable candidate for smart windows and bifacial semi-transparent solar cell applications. In this study, highly crystalline CuInGaSe2 (CIGS) nanowires were successfully grown by horizontal-type vapor phase epitaxy on an ITO substrate. Length, diameter, and density of the nanowires were studied by varying the growth temperature (500, 520, and 560 °C), time (3.5, 6.5, and 9.5 h), and type of catalyst (In, Au, and Ga). Length, diameter, and density of the nanowires were found to be highly dependent on the growth conditions. At an optimized growth period and temperature of 3.5 h and 520 °C, respectively, the length and diameter of the nanowires were found to increase when grown in a catalyst-free environment. However, the density of the nanowires was found to be higher while using a catalyst during growth. Even in a catalyst-free environment, an Indium cluster formed at the bottom of the nanowires. The source of these nanowires is believed to be Indium from the ITO substrate which was observed in the EDS measurement. TEM-based EDS and line EDS indicated that the nanowires are made up of CIGS material with a very low Gallium content. XRD measurements also show the appearance of wurtzite CIS nanowires grown on ITO in addition to the chalcopyrite phase. PL spectroscopy was done to see the near-band-edge emission for finding band-to-band optical transition in this material. Optical response of the CIGS nanowire network was also studied to see the photovoltaic effect. This work creates opportunities for making real solar cell devices in superstrate configuration.
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Antibacterial activity of single crystalline silver-doped anatase TiO{sub 2} nanowire arrays
Energy Technology Data Exchange (ETDEWEB)
Zhang, Xiangyu, E-mail: zhangxiangyu@tyut.edu.cn; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin, E-mail: tangbin@tyut.edu.cn
2016-05-30
Graphical abstract: The silver-doped TiO{sub 2} nanowire arrays on titanium foil substrate were synthesized via a two-step process. It includes: deposition of AgTi films on titanium foil by magnetron sputtering; preparation of AgNW arrays on AgTi films via alkali (NaOH) hydrothermal treatment and ion-exchange with HCl, followed by calcinations. - Highlights: • Ag-doped TiO{sub 2} nanowire arrays have been prepared by a duplex-treatment. • The duplex-treatment consisted of magnetron sputtering and hydrothermal growth. • Ag-doped nanowire arrays show excellent antibacterial activity against E. coli. - Abstract: Well-ordered, one-dimensional silver-doped anatase TiO{sub 2} nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO{sub 2} nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.
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Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
Energy Technology Data Exchange (ETDEWEB)
Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong
2018-01-30
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
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Synthesis and Raman analysis of SnS nanoparticles synthesized by PVP assisted polyol method
Energy Technology Data Exchange (ETDEWEB)
Baby, Benjamin Hudson; Mohan, D. Bharathi, E-mail: d.bharathimohan@gmail.com [Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, R.V. Nagar, Kalapet, Puducherry-605014 (India)
2015-06-24
SnS film was prepared by a simple drop casting method after synthesizing SnS nanoparticles by using PVP assisted polyol method. Confocal Raman study was carried out for the as deposited and annealed (150, 300 and 400 °C) films at two different excitation wavelengths 514 and 785 nm. At the excitation wavelength of 514 nm, the Raman modes showed for a mixed phase of SnS and SnS{sub 2} up to 150 °C and then only a pure SnS phase was observed up to 400 °C due to the dissociation of SnS{sub 2} in to SnS by releasing S. The increase in intensity of Raman (A{sub g} and B{sub 3g}) as well as IR (B{sub 3u}) active modes of SnS are observed with increasing annealing temperature at excitation wavelength 785 nm due to the increased crystallinity and inactiveness of SnS{sub 2} modes. X-ray diffraction confirming the formation of a single phase of SnS while the greater homogeneity in both size and shape of SnS nanoparticles were confirmed through surface morphology from SEM.
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Semiconductor nanowires and templates for electronic applications
Energy Technology Data Exchange (ETDEWEB)
Ying, Xiang
2009-07-15
This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth
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Zhuo, Ming-Peng; Zhang, Ye-Xin; Li, Zhi-Zhou; Shi, Ying-Li; Wang, Xue-Dong; Liao, Liang-Sheng
2018-03-15
The controlled fabrication of organic single-crystalline nanowires (OSCNWs) with a uniform diameter in the nanoscale via the bottom-up approach, which is just based on weak intermolecular interaction, is a great challenge. Herein, we utilize the synergy approach of the bottom-up and the top-down processes to fabricate OSCNWs with diameters of 120 ± 10 nm through stepwise evolution processes. Specifically, the evolution processes vary from the self-assembled organic micro-rods with a quadrangular pyramid-like end-structure bounded with {111}s and {11-1}s crystal planes to the "top-down" synthesized organic micro-rods with the flat cross-sectional {002}s plane, to the organic micro-tubes with a wall thickness of ∼115 nm, and finally to the organic nanowires. Notably, the anisotropic etching process caused by the protic solvent molecules (such as ethanol) is crucial for the evolution of the morphology throughout the whole top-down process. Therefore, our demonstration opens a new avenue for the controlled-fabrication of organic nanowires, and also contributes to the development of nanowire-based organic optoelectronics such as organic nanowire lasers.
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Energy Technology Data Exchange (ETDEWEB)
Gómez, A. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Martínez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico); Calixto-Rodríguez, M. [Centro de Investigación en Energía, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Avellaneda, D. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, México (Mexico); Reyes, P.G. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico)
2013-06-15
In this paper, we report modifications of structural and optical, electrical properties that occur in tin sulphide (SnS) treated in O{sub 2} plasma. The SnS thin films were deposited by chemical bath deposition technique. The samples were treated in an O{sub 2} plasma discharge at 3 Torr of pressure discharge, a discharge voltage of 2.5 kV and 20 mA of discharge current. The prepared and treated thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The photoconductivity and electrical effects of SnS have been studied. The SnS thin films had an orthorhombic crystalline structure. With the plasma treatment the optical gap and electrical properties of the SnS films changed from 1.61 to 1.84 eV, for 3.9 × 10{sup 5} to 10.42 Ω cm, respectively. These changes can be attributed to an increase in electron density, percolation effects due to porosity, surface degradation/etching that is an increase in surface roughness, where some structural changes related to crystallinity occurs like a high grain size as revealed by SEM images.
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Guo, Yujie; Van Bilzen, Bart; Locquet, Jean Pierre; Seo, Jin Won
2015-12-11
One-dimensional single crystalline InGaO3(ZnO)n (IGZO) nanostructures have great potential for various electrical and optical applications. This paper demonstrates for the first time, to our knowledge, a non-vacuum route for the synthesis of IGZO nanowires by annealing ZnO nanowires covered with solution-based IGZO precursor. This method results in nanowires with highly periodic IGZO superlattice structure. The phase transition of IGZO precursor during thermal treatment was systematically studied. Transmission electron microscopy studies reveal that the formation of the IGZO structure is driven by anisotropic inter-diffusion of In, Ga, and Zn atoms, and also by the crystallization of the IGZO precursor. Optical measurements using cathodoluminescence and UV-vis spectroscopy confirm that the nanowires consist of the IGZO compound with wide optical band gap and suppressed luminescence.
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DEFF Research Database (Denmark)
Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina
Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....
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Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition
International Nuclear Information System (INIS)
Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi
2014-01-01
A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)
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Tang, Bo; Zhuo, Linhai; Ge, Jiechao; Niu, Jinye; Shi, Zhiqiang
2005-04-18
Ultralong and single-crystalline Cd(OH)(2) nanowires were fabricated by a hydrothermal method using alkali salts as mineralizers. The morphology and size of the final products strongly depend on the effects of the alkali salts (e.g., KCl, KNO(3), and K(2)SO(4) or NaCl, NaNO(3), and Na(2)SO(4)). When the salt is absent, only nanoparticles are observed in TEM images of the products. The 1D nanostructure growth method presented herein offers an excellent tool for the design of other advanced materials with anisotropic properties. In addition, the Cd(OH)(2) nanowires might act as a template or precursor that is potentially converted into 1D cadmium oxide through dehydration or into 1D nanostructures of other functional materials (e.g., CdS, CdSe).
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International Nuclear Information System (INIS)
Guo, Yujie; Seo, Jin Won; Bilzen, Bart Van; Locquet, Jean Pierre
2015-01-01
One-dimensional single crystalline InGaO_3(ZnO)_n (IGZO) nanostructures have great potential for various electrical and optical applications. This paper demonstrates for the first time, to our knowledge, a non-vacuum route for the synthesis of IGZO nanowires by annealing ZnO nanowires covered with solution-based IGZO precursor. This method results in nanowires with highly periodic IGZO superlattice structure. The phase transition of IGZO precursor during thermal treatment was systematically studied. Transmission electron microscopy studies reveal that the formation of the IGZO structure is driven by anisotropic inter-diffusion of In, Ga, and Zn atoms, and also by the crystallization of the IGZO precursor. Optical measurements using cathodoluminescence and UV-vis spectroscopy confirm that the nanowires consist of the IGZO compound with wide optical band gap and suppressed luminescence. (paper)
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Directional Charge Separation in Isolated Organic Semiconductor Crystalline Nanowires
Energy Technology Data Exchange (ETDEWEB)
Barnes, Michael; Labastide, Joelle; Bond-Thompson, Hilary; Briseno, Alejandro; Collela, Nicolas
2017-03-01
In the conventional view of organic photovoltaics (OPV), localized electronic excitations (excitons) formed in the active layer are transported by random 3D diffusion to an interface where charge separation and extraction take place. Because radiative de-excitation is usually strongly allowed in organic semiconductors, efficient charge separation requires high exciton mobility, with much of the diffusive motion ‘wasted’ in directions that don’t result in an interface encounter. Our research efforts are focused on ways to enforce a preferred directionality in energy and/or charge transport using ordered crystalline nanowires in which the intermolecular interactions that facilitate transport along, for example, the pi-stacking axis, can be made several orders of magnitude stronger than those in a transverse direction. The results presented in our recent work (Nature Communications) is a first step towards realizing the goal of directional control of both energy transport and charge separation, where excitons shared between adjacent molecules dissociate exclusively along the pi-stacking direction.
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Recrystallized arrays of bismuth nanowires with trigonal orientation.
Limmer, Steven J; Yelton, W Graham; Erickson, Kristopher J; Medlin, Douglas L; Siegal, Michael P
2014-01-01
We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.
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Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films
Energy Technology Data Exchange (ETDEWEB)
Gupta, Yashika [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Department of Electronic Science, University of Delhi-South Campus, New Delhi 110021 (India); Arun, P., E-mail: arunp92@physics.du.ac.in [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Naudi, A.A.; Walz, M.V. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Instituto de Física del Litoral (CONICET-UNL), Guemes 3450, 3000 Santa Fe (Argentina)
2016-08-01
Tin sulphide nano-crystalline thin films were fabricated on glass and Indium Tin Oxide (ITO) substrates by thermal evaporation method. The crystal structure orientation of the films was found to be dependent on the substrate. Residual stress existed in the films due to these orientations. This stress led to variation in lattice parameter. The nano-crystalline grain size was also found to vary with film thickness. A plot of band-gap with grain size or with lattice parameter showed the existence of a family of curves. This implied that band-gap of SnS films in the preview of the present study depends on two parameters, lattice parameter and grain size. The band-gap relation with grain size is well known in the nano regime. Experimental data fitted well with this relation for the given lattice constants. The manuscript uses theoretical structure calculations for different lattice constants and shows that the experimental data follows the trend. Thus, confirming that the band gap has a two variable dependency. - Highlights: • Tin sulphide films are grown on glass and ITO substrates. • Both substrates give differently oriented films. • The band-gap is found to depend on grain size and lattice parameter. • Using data from literature, E{sub g} is shown to be two parameter function. • Theoretical structure calculations are used to verify results.
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Han, Ning; Wang, Fengyun; Yang, Zaixing; Yip, SenPo; Dong, Guofa; Lin, Hao; Fang, Ming; Hung, TakFu; Ho, Johnny C
2014-01-01
Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10(7) Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition. 77.55.D; 61.46.Km; 78.40.Fy.
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Energy Technology Data Exchange (ETDEWEB)
Cantu-Valle, Jesus [Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249 (United States); Díaz Barriga-Castro, Enrique [Centro de Investigación de Ciencias Físico Matemáticas/Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, Pedro de Alba s/n, San Nicolás de Los Garza, Nuevo León 66450 (Mexico); Vega, Víctor; García, Javier [Departamento de Física, Universidad de Oviedo, Calvo Sotelo s/n, Oviedo 33007 (Spain); Mendoza-Reséndez, Raquel [Facultad de Ingeniería Mecánica y Eléctrica. Universidad Autónoma de Nuevo León, Pedro de Alba s/n, San Nicolás de Los Garza, Nuevo León 66450 (Mexico); Luna, Carlos [Centro de Investigación de Ciencias Físico Matemáticas/Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, Pedro de Alba s/n, San Nicolás de Los Garza, Nuevo León 66450 (Mexico); Manuel Prida, Víctor [Departamento de Física, Universidad de Oviedo, Calvo Sotelo s/n, Oviedo 33007 (Spain); and others
2015-04-01
Understanding and measuring the magnetic properties of an individual nanowire and their relationship with crystalline structure and geometry are of scientific and technological great interest. In this work, we report the localized study of the magnetic flux distribution and the undisturbed magnetization of a single ferromagnetic nanowire that poses a bar-code like structure using off-axis electron holography (EH) under Lorentz conditions. The nanowires were grown by template-assisted electrodeposition, using AAO templates. Electron holography allows the visualization of the magnetic flux distribution within and surroundings as well as its quantification. The magnetic analysis performed at individual nanowires was correlated with the chemical composition and crystalline orientation of the nanowires. - Highlights: • The structure-magnetic property relationship of CoNi nanowires is determined. • Off axis electron holography for the magnetic nanowires is used for the analysis. • The magnetization is quantitatively obtained from the retrieved phase images. • These results lead to a better comprehension of the magneto-crystalline phenomena.
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International Nuclear Information System (INIS)
Cantu-Valle, Jesus; Díaz Barriga-Castro, Enrique; Vega, Víctor; García, Javier; Mendoza-Reséndez, Raquel; Luna, Carlos; Manuel Prida, Víctor
2015-01-01
Understanding and measuring the magnetic properties of an individual nanowire and their relationship with crystalline structure and geometry are of scientific and technological great interest. In this work, we report the localized study of the magnetic flux distribution and the undisturbed magnetization of a single ferromagnetic nanowire that poses a bar-code like structure using off-axis electron holography (EH) under Lorentz conditions. The nanowires were grown by template-assisted electrodeposition, using AAO templates. Electron holography allows the visualization of the magnetic flux distribution within and surroundings as well as its quantification. The magnetic analysis performed at individual nanowires was correlated with the chemical composition and crystalline orientation of the nanowires. - Highlights: • The structure-magnetic property relationship of CoNi nanowires is determined. • Off axis electron holography for the magnetic nanowires is used for the analysis. • The magnetization is quantitatively obtained from the retrieved phase images. • These results lead to a better comprehension of the magneto-crystalline phenomena
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Nanowire structures and electrical devices
Bezryadin, Alexey; Remeika, Mikas
2010-07-06
The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.
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Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng
2011-01-01
In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999
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Epitaxy of advanced nanowire quantum devices
Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.
2017-08-01
Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.
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Optical properties of indium phosphide nanowire ensembles at various temperatures
International Nuclear Information System (INIS)
Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P
2010-01-01
Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.
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Optical properties of indium phosphide nanowire ensembles at various temperatures
Energy Technology Data Exchange (ETDEWEB)
Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)
2010-09-03
Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.
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Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays
International Nuclear Information System (INIS)
Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.
2008-01-01
The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions
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Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.
Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah
2017-10-06
Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.
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Biotemplated synthesis of PZT nanowires.
Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C
2013-01-01
Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.
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Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics
Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish
2016-01-01
Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...
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Functionalised Silver Nanowire Structures
International Nuclear Information System (INIS)
Andrew, Piers; Ilie, Adelina
2007-01-01
Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage
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Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors
International Nuclear Information System (INIS)
Glas, F; Patriarche, G; Harmand, J C
2010-01-01
We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.
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Electrodeposition of rhenium-tin nanowires
International Nuclear Information System (INIS)
Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer
2011-01-01
Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.
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Biotemplated Synthesis of PZT Nanowires
2013-11-25
electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a
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Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties
Directory of Open Access Journals (Sweden)
Hope Greg
2008-01-01
Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.
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Highly ordered uniform single-crystal Bi nanowires: fabrication and characterization
International Nuclear Information System (INIS)
Bisrat, Y; Luo, Z P; Davis, D; Lagoudas, D
2007-01-01
A mechanical pressure injection technique has been used to fabricate uniform bismuth (Bi) nanowires in the pores of an anodic aluminum oxide (AAO) template. The AAO template was prepared from general purity aluminum by a two-step anodization followed by heat treatment to achieve highly ordered nanochannels. The nanowires were then fabricated by an injection technique whereby the molten Bi was injected into the AAO template using a hydraulic pressure method. The Bi nanowires prepared by this method were found to be dense and continuous with uniform diameter throughout the length. Electron diffraction experiments using the transmission electron microscope on cross-sectional and free-standing longitudinal Bi nanowires showed that the majority of the individual nanowires were single crystalline, with preferred orientation of growth along the [011] zone axis of the pseudo-cubic structure. The work presented here provides an inexpensive and effective way of fabricating highly ordered single-crystalline Bi nanowires, with uniform size distributions
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Diluted magnetic semiconductor nanowires exhibiting magnetoresistance
Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA
2011-08-23
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.
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Energy Technology Data Exchange (ETDEWEB)
Wang, Yu-Cian; Chen, Chih-Yao; Chen, I Chen [Institute of Materials Science and Engineering, National Central University, Taoyuan (China); Kuo, Cheng-Wen; Kuan, Ta-Ming; Yu, Cheng-Yeh [TSEC Corporation, Hsinchu (China)
2016-08-15
Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O{sub 2}-Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm{sup -2}) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Modifications in SnS thin films by plasma treatments
Energy Technology Data Exchange (ETDEWEB)
Martinez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210 Cuernavaca, Morelos (Mexico); Avellaneda, D. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)
2012-02-01
The present study shows the modifications of structural, optical and electrical characteristics that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different pressure conditions. The films were obtained by the chemical bath deposition method, which results in SnS thin films with an orthorhombic crystalline structure, band gap (E{sub g}) of 1.1-1.2 eV, and electrical conductivities ({sigma}) in the order of 10{sup -6} {Omega}{sup -1}cm{sup -1}. The films treated with air plasma at pressures between 1 and 4 Torr, showed the presence of SnS{sub 2}, Sn{sub 2}S{sub 3}, and SnO{sub 2} phases, within the band gap values ranging from 0.9 to 1.5 eV. On the other hand, the films treated with nitrogen plasma presented the same phases, but showed a significant modification in the electrical conductivity, increasing from 10{sup -6} {Omega}{sup -1}cm{sup -1} (as-deposited) up to 10{sup -2}-10{sup -3} {Omega}{sup -1}cm{sup -1} (plasma treated). This result is a suitable range of conductivity for the improvement of the solar cells with SnS as an absorber material. Also, emission spectroscopy measurements were carried out in both air and nitrogen plasma treatments.
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Fabrication and Characterization of Mg-Doped GaN Nanowires
International Nuclear Information System (INIS)
Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo
2008-01-01
Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)
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Piezoresistive effect in top-down fabricated silicon nanowires
DEFF Research Database (Denmark)
Reck, Kasper; Richter, Jacob; Hansen, Ole
2008-01-01
We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference...
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Solution-processed core-shell nanowires for efficient photovoltaic cells.
Tang, Jinyao; Huo, Ziyang; Brittman, Sarah; Gao, Hanwei; Yang, Peidong
2011-08-21
Semiconductor nanowires are promising for photovoltaic applications, but, so far, nanowire-based solar cells have had lower efficiencies than planar cells made from the same materials, even allowing for the generally lower light absorption of nanowires. It is not clear, therefore, if the benefits of the nanowire structure, including better charge collection and transport and the possibility of enhanced absorption through light trapping, can outweigh the reductions in performance caused by recombination at the surface of the nanowires and at p-n junctions. Here, we fabricate core-shell nanowire solar cells with open-circuit voltage and fill factor values superior to those reported for equivalent planar cells, and an energy conversion efficiency of ∼5.4%, which is comparable to that of equivalent planar cells despite low light absorption levels. The device is made using a low-temperature solution-based cation exchange reaction that creates a heteroepitaxial junction between a single-crystalline CdS core and single-crystalline Cu2S shell. We integrate multiple cells on single nanowires in both series and parallel configurations for high output voltages and currents, respectively. The ability to produce efficient nanowire-based solar cells with a solution-based process and Earth-abundant elements could significantly reduce fabrication costs relative to existing high-temperature bulk material approaches.
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Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics
Directory of Open Access Journals (Sweden)
Zahra Ostadmahmoodi Do
2016-06-01
Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.
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Directory of Open Access Journals (Sweden)
Shuang Xi
2012-01-01
Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.
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Angular dependence of coercivity with temperature in Co-based nanowires
Energy Technology Data Exchange (ETDEWEB)
Bran, C., E-mail: cristina.bran@icmm.csic.es [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Espejo, A.P. [Departamento de Física, Universidad de Santiago de Chile (USACH) and Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avenida Ecuador 3493, 9170124 Santiago (Chile); Palmero, E.M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH) and Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avenida Ecuador 3493, 9170124 Santiago (Chile); Vázquez, M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain)
2015-12-15
The magnetic behavior of arrays of Co and CoFe nanowire arrays has been measured in the temperature range between 100 and 300 K. We have paid particular attention to the angular dependence of magnetic properties on the applied magnetic field orientation. The experimental angular dependence of coercivity has been modeled according to micromagnetic analytical calculations, and we found that the propagation of a transversal domain wall mode gives the best fitting with experimental observations. That reversal mode holds in the whole measuring temperature range, for nanowires with different diameters and crystalline structure. Moreover, the quantitative strength of the magnetocrystalline anisotropy and its magnetization easy axis are determined to depend on the crystalline structure and nanowires diameter. The evolution of the magnetocrystalline anisotropy with temperature for nanowires with different composition gives rise to an opposite evolution of coercivity with increasing temperature: it decreases for CoFe while it increases for Co nanowire arrays.
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International Nuclear Information System (INIS)
Wu Yiming; Zhang Xiujuan; Pan Huanhuan; Zhang Xiwei; Zhang Yuping; Zhang Xiaozhen; Jie Jiansheng
2013-01-01
Due to their extraordinary properties, single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices. However, it remains a critical challenge to assemble organic NWs rationally in an orientation-, dimensionality- and location-controlled manner. Herein, we demonstrate a feasible method for aligned growth of single-crystalline copper phthalocyanine (CuPc) NW arrays with high density, large-area uniformity and perfect crossed alignment by using Au film as a template. The growth process was investigated in detail. The Au film was found to have a critical function in the aligned growth of NWs, but may only serve as the active site for NW nucleation because of the large surface energy, as well as direct the subsequent aligned growth. The as-prepared NWs were then transferred to construct single NW-based photoconductive devices, which demonstrated excellent photoresponse properties with robust stability and reproducibility; the device showed a high switching ratio of ∼180, a fast response speed of ∼100 ms and could stand continuous operation up to 2 h. Importantly, this strategy can be extended to other organic molecules for their synthesis of NW arrays, revealing great potential for use in the construction of large-scale high-performance functional nano-optoelectronic devices. (paper)
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International Nuclear Information System (INIS)
Shea, T.J.; Cameron, P.; Doolittle, L.; Power, J.
2000-01-01
The Spallation Neutron Source (SNS) Project is a collaborative effort to build the next generation neutron science facility at Oak Ridge, TN. The facility will deliver a 2 MW proton beam to a liquid mercury target. Neutrons from this target will be moderated and sent to several state-of-the-art instruments. Six national laboratories are involved in SNS construction. Berkeley (LBNL) will build the front end that produces a 2.5 MeV, 52 mA H-beam. Los Alamos (LANL) is responsible for the 1 GeV linac with a superconducting section provided by Thomas Jefferson (JLab). Brookhaven (BNL) is building the transfer lines and accumulator ring. Oak Ridge (ORNL) and Argonne (ANL) have responsibility for the target and instruments. All activities are coordinated by the SNS project office at Oak Ridge. The high beam power, a desired availability of 95%, and an aggressive commissioning schedule lead to some interesting challenges in beam diagnostics
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Kubo, Shohei; Sakata, Kiriko; Shimizu, Hiroshi
2015-01-01
The adolescent is the big turning point during the life. Adolescents must find positive answer for the question “what is with the quality of oneself” through interactions with neighboring people to develop SELF-IDENTITY. On the other hand, Social Network Services (SNS) are highly familiar to them, making “SNS addiction” become a big social problem. This study attempted causal relationship among self-identity development and using SNS, consequently SNS addiction, from the viewpoint of personal...
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Platinum boride nanowires: Synthesis and characterization
International Nuclear Information System (INIS)
Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang
2012-01-01
Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.
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Diamond nanowires: fabrication, structure, properties, and applications.
Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang
2014-12-22
C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Remote handling equipment for SNS
International Nuclear Information System (INIS)
Poulten, B.H.
1983-01-01
This report gives information on the areas of the SNS, facility which become highly radioactive preventing hands-on maintenance. Levels of activity are sufficiently high in the Target Station Area of the SNS, especially under fault conditions, to warrant reactor technology to be used in the design of the water, drainage and ventilation systems. These problems, together with the type of remote handling equipment required in the SNS, are discussed
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Improving cycle stability of SnS anode for sodium-ion batteries by limiting Sn agglomeration
Wang, Wenhui; Shi, Liang; Lan, Danni; Li, Quan
2018-02-01
Flower-like SnS nanostructures are obtained by a simple solvothermal method for anode applications in Na-ion batteries. We show experimental evidence of progressive Sn agglomeration and crystalline Na2S enrichment at the end of de-sodiation process of the SnS electrode, both of which contribute to the capacity decay of the electrode upon repeated cycles. By replacing the commonly adopted acetylene black conductive additive with multi-wall carbon nanotubes (MWCNT), the cycle stability of the SnS electrode is largely improved, which correlates well with the observed suppression of both Sn agglomeration and Na2S enrichment at the end of de-sodiation cycle. A full cell is assembled with the SnS/MWCNT anode and the P2-Na2/3Ni1/3Mn1/2Ti1/6O2 cathode. An initial energy density of 262 Wh/kg (normalized to the total mass of cathode and anode) is demonstrated for the full cell, which retains 71% of the first discharge capacity after 40 cycles.
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Novel low-temperature growth of SnO2 nanowires and their gas-sensing properties
International Nuclear Information System (INIS)
Kumar, R. Rakesh; Parmar, Mitesh; Narasimha Rao, K.; Rajanna, K.; Phani, A.R.
2013-01-01
Graphical abstract: -- A simple thermal evaporation method is presented for the growth of crystalline SnO 2 nanowires at a low substrate temperature of 450 °C via an gold-assisted vapor–liquid–solid mechanism. The as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction, and were also tested for methanol vapor sensing. Transmission electron microscopy studies revealed the single-crystalline nature of the each nanowire. The fabricated sensor shows good response to methanol vapor at an operating temperature of 450 °C.
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Ultraviolet photodetectors made from SnO2 nanowires
International Nuclear Information System (INIS)
Wu, Jyh-Ming; Kuo, Cheng-Hsiang
2009-01-01
SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.
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Tétreault, Nicolas
2010-12-28
Herein, we present a novel morphology for solid-state dye-sensitized solar cells based on the simple and straightforward self-assembly of nanorods into a 3D fibrous network of fused single-crystalline anatase nanowires. This architecture offers a high roughness factor, significant light scattering, and up to several orders of magnitude faster electron transport to reach a near-record-breaking conversion efficiency of 4.9%. © 2010 American Chemical Society.
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Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires
Giraud, Paul; Hou, Bo; Pak, Sangyeon; Inn Sohn, Jung; Morris, Stephen; Cha, SeungNam; Kim, Jong Min
2018-02-01
We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.
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Synthesis and electrical characterization of tungsten oxide nanowires
Institute of Scientific and Technical Information of China (English)
Huang Rui; Zhu Jing; Yu Rong
2009-01-01
Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.
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Downsizing of single crystalline high aspect ratio tungsten nanowires
International Nuclear Information System (INIS)
Milenkovic, Srdjan; Drensler, Stefanie; Hassel, Achim Walter
2015-01-01
Directional solidification of eutectic NiAl-W alloys offers an intuitive method to produce tungsten nanowires. Through the use of two different methods, the well-established Bridgman method and a newer type floating zone method, the direct influence of process parameters, like the withdrawal rate and the temperature gradient, onto the sample microstructure were studied. The sharp temperature gradient, built up using a four mirror system focusing the light emitted by halogen lamps inside the optical floating zone furnace allows producing nanowires with a diameter as small as 75 nm. Differences in the solid/liquid interface morphology depending on the solidification method used are discussed. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Wu, Chien-Ting; Chu, Ming-Wen; Chen, Li-Chyong; Chen, Kuei-Hsien; Chen, Chun-Wei; Chen, Cheng Hsuan
2010-10-01
Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of approximately 30-90nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-A electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at approximately 8.3eV (approximately 150nm) and surface guided modes at 3.88eV (approximately 320nm), which are in visible/ultra-violet spectral regime above GaN bandgap of approximately 3.3eV (approximately 375nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below approximately 3.5eV to the spectral regime further beyond.
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van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si
Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching
2018-03-01
Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.
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Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment
Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun
2018-05-01
Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.
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Comparison Analysis among Large Amount of SNS Sites
Toriumi, Fujio; Yamamoto, Hitoshi; Suwa, Hirohiko; Okada, Isamu; Izumi, Kiyoshi; Hashimoto, Yasuhiro
In recent years, application of Social Networking Services (SNS) and Blogs are growing as new communication tools on the Internet. Several large-scale SNS sites are prospering; meanwhile, many sites with relatively small scale are offering services. Such small-scale SNSs realize small-group isolated type of communication while neither mixi nor MySpace can do that. However, the studies on SNS are almost about particular large-scale SNSs and cannot analyze whether their results apply for general features or for special characteristics on the SNSs. From the point of view of comparison analysis on SNS, comparison with just several types of those cannot reach a statistically significant level. We analyze many SNS sites with the aim of classifying them by using some approaches. Our paper classifies 50,000 sites for small-scale SNSs and gives their features from the points of network structure, patterns of communication, and growth rate of SNS. The result of analysis for network structure shows that many SNS sites have small-world attribute with short path lengths and high coefficients of their cluster. Distribution of degrees of the SNS sites is close to power law. This result indicates the small-scale SNS sites raise the percentage of users with many friends than mixi. According to the analysis of their coefficients of assortativity, those SNS sites have negative values of assortativity, and that means users with high degree tend to connect users with small degree. Next, we analyze the patterns of user communication. A friend network of SNS is explicit while users' communication behaviors are defined as an implicit network. What kind of relationships do these networks have? To address this question, we obtain some characteristics of users' communication structure and activation patterns of users on the SNS sites. By using new indexes, friend aggregation rate and friend coverage rate, we show that SNS sites with high value of friend coverage rate activate diary postings
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A nanoscale ordered materials diffractometer for the SNS
International Nuclear Information System (INIS)
Neuefeind, Joerg; Chipley, Kenneth K.; Tulk, Chris A.; Simonson, J. Michael; Winokur, Michael J.
2006-01-01
The Nanoscale Ordered Materials Diffractometer (NOMAD) is one of five neutron scattering instruments being managed within the Spallation Neutron Source (SNS) Instruments-Next Generation (SING) project. NOMAD is designed as a high-flux, medium-resolution diffractometer using a large bandwidth of neutron energies and extensive detector coverage to perform structural determinations of local order in crystalline and amorphous materials. The instrument will enable studies of a large variety of samples ranging from liquids, solutions, glasses, polymers, and nanocrystalline materials to long-range ordered crystals and will allow unprecedented access to high-resolution pair distribution functions, small-contrast isotope substitution experiments, small sample sizes, and parametric studies. Project completion for the instrument is anticipated in 2010 and a review of the design status will be given
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Simple synthetic route to manganese-containing nanowires with the spinel crystal structure
Energy Technology Data Exchange (ETDEWEB)
Yu, Lei; Zhang, Yan; Hudak, Bethany M.; Wallace, Damon K.; Kim, Doo Young; Guiton, Beth S.
2016-08-15
This report describes a new route to synthesize single-crystalline manganese-containing spinel nanowires (NWs) by a two-step hydrothermal and solid-state synthesis. Interestingly, a nanowire or nanorod morphology is maintained during conversion from MnO{sub 2}/MnOOH to CuMn{sub 2}O{sub 4}/Mg{sub 2}MnO{sub 4}, despite the massive structural rearrangement this must involve. Linear sweep voltammetry (LSV) curves of the products give preliminary demonstration that CuMn{sub 2}O{sub 4} NWs are catalytically active towards the oxygen evolution reaction (OER) in alkaline solution, exhibiting five times the magnitude of current density found with pure carbon black. - Highlights: • Synthesis of single-crystalline manganese-containing spinel nanowires. • Binary oxide nanowire converted to ternary oxide wire through solid state reaction. • Approach to structure conversion with shape retention could be generally applicable. • Copper and Manganese display multiple oxidation states with potential for catalysis. • CuMn{sub 2}O{sub 4} nanowires show promise as catalysts for the oxygen evolution reaction.
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Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity
International Nuclear Information System (INIS)
Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.
2008-01-01
Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires
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Semiconductor Nanowires and Nanotubes for Energy Conversion
Fardy, Melissa Anne
In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb
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Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition
Energy Technology Data Exchange (ETDEWEB)
Zhao, Yuping; Li, Chengchen [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Mingming, E-mail: andychain@live.cn [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Yu, Xiao; Chang, Yunwei [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Anqi [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Zhu, Hai, E-mail: zhuhai5@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Tang, Zikang, E-mail: zktang@umac.mo [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau (China)
2016-12-09
In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.
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Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition
International Nuclear Information System (INIS)
Zhao, Yuping; Li, Chengchen; Chen, Mingming; Yu, Xiao; Chang, Yunwei; Chen, Anqi; Zhu, Hai; Tang, Zikang
2016-01-01
In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.
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Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property
International Nuclear Information System (INIS)
Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang
2009-01-01
Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.
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Modeling high-Power Accelerators Reliability-SNS LINAC (SNS-ORNL); MAX LINAC (MYRRHA)
International Nuclear Information System (INIS)
Pitigoi, A. E.; Fernandez Ramos, P.
2013-01-01
Improving reliability has recently become a very important objective in the field of particle accelerators. The particle accelerators in operation are constantly undergoing modifications, and improvements are implemented using new technologies, more reliable components or redundant schemes (to obtain more reliability, strength, more power, etc.) A reliability model of SNS (Spallation Neutron Source) LINAC has been developed within MAX project and analysis of the accelerator systems reliability has been performed within the MAX project, using the Risk Spectrum reliability analysis software. The analysis results have been evaluated by comparison with the SNS operational data. Results and conclusions are presented in this paper, oriented to identify design weaknesses and provide recommendations for improving reliability of MYRRHA linear accelerator. The SNS reliability model developed for the MAX preliminary design phase indicates possible avenues for further investigation that could be needed to improve the reliability of the high-power accelerators, in view of the future reliability targets of ADS accelerators.
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Tungsten oxide nanowires grown on amorphous-like tungsten films
International Nuclear Information System (INIS)
Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A
2015-01-01
Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)
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Growth and luminescence characterization of large-scale zinc oxide nanowires
Dai, L; Wang, W J; Zhou, T; Hu, B Q
2003-01-01
Large-scale zinc oxide (ZnO) nanowires were grown via a simple chemical reaction involving water vapour. Electron microscopy observations reveal that the ZnO nanowires are single crystalline and grow along the c-axis ([001]) direction. Room temperature photoluminescence measurements show a striking blue emission at 466 nm along with two other emissions in the ultraviolet and yellow regions. Annealing treatment of the as-grown ZnO nanowires results in an apparent reduction of the intensity of the blue emission, which indicates that the blue emission might be originating from the oxygen or zinc defects generated in the process of growth of the ZnO nanowires.
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Fabrication of silver nanowires via a β-cyclodextrin-derived soft template
Directory of Open Access Journals (Sweden)
C. Y. Liu
2018-07-01
Full Text Available Supramolecular β-cyclodextrin (β-CD was used as a soft template for the fabrication of long silver nanowires. A novel design using self-assembled β-CD for the reduction of silver ions was studied. The concentrations of iron chloride, silver nitrate, and the template were controlling factors for the growth of the silver nanowires. Iron chloride was used to accelerate and facilitate the formation of the silver nanowires and inhibit oxidative etching. However, an excessive concentration of Fe+3 resulted in etching of the silver nanostructures. Furthermore, the silver concentration was another controlling factor. The length of the silver nanowires increased as the concentration of silver cations increased. Nevertheless, an excess concentration of silver cations formed various silver crystalline structures. In this study, the optimal ratio between iron chloride and silver nitrate was determined to be 1:13.3. A maximum length of 20 µm was achieved using a concentration of 0.23 M for the soft template. Moreover, the junction of two growing silver nanowires was observed, forming a long fused nanowire, and some significant boundaries were observed. The observed results were further confirmed using scanning electron microscopy (SEM and transmission electron microscopy (TEM analyses. X-ray diffraction (XRD and energy dispersive spectrometer (EDS analyses were used to indicate the presence of silver and the formation of crystalline materials.
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Fabrication and morphology of uniaxially aligned perylenediimide nanowires
Machida, Shinjiro; Tanikatsu, Makoto; Itaya, Akira; Ikeda, Noriaki
2017-06-01
Uniaxial alignment of crystalline nanowires consisting of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) was achieved on poly(tetrafluoroethylene) (PTFE) layers prepared by friction transfer method on a glass substrate. The nanowires were formed by spin-coating a trifluoroacetic acid (TFA) solution of PTCDI-C8 on the PTFE layers and were further grown under TFA vapor atmosphere. The morphology of the PTCDI-C8 nanowires were characterized using atomic force microscope (AFM) and fluorescence optical microscope with changing the dye concentration in the spin coating solution, annealing time in the TFA vapor, and substrate materials. The nanowires prepared on the PTFE layer on a silica-coated silicon or a mica substrate did not grow so well as those on the glass substrate. This result suggests that the surface roughness would affect the PTFE layer and the growth of the PTCDI nanowires.
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Magnetic properties and crystalline structures of Fe{sub 21}Ni{sub 79} nanowire arrays
Energy Technology Data Exchange (ETDEWEB)
Lee, Kwan Hyi; Lee, Woo Young; Lee, Hwa Young; Jeung, Won Young [Korea Institute of Science and Technology, Seoul (Korea, Republic of)
2002-04-01
Fe{sub 21}Ni{sub 79} nanowire arrays have been fabricated by the electroforming method using AAO (anodic aluminum oxide) as a template, which was prepared by anodizing the pure aluminum foil. According to the magnetic property of Fe{sub 21}Ni{sub 79} nanowire prepared, it was found to have the coercivity more than 1 kOe due to the shape anisotropy and squareness (Mr/Ms) very close to 1. Especially, it could be noted that Fe{sub 21}Ni{sub 79} nanowire showed the preferred crystallographic orientation of (220). Annealing treatment of Fe{sub 21}Ni{sub 79} nanowire at 500 degree C resulted in the enhancement of coercivity by 18% while the squareness was not varied by annealing treatment. However, the random orientation of Fe{sub 21}Ni{sub 79} disk and the preferred orientation of nanowire arrays were maintained without respect to the annealing treatment up to 500 degree C.
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One-step synthesis of CdTe branched nanowires and nanorod arrays
International Nuclear Information System (INIS)
Hou Junwei; Yang Xiuchun; Lv Xiaoyi; Peng Dengfeng; Huang Min; Wang Qingyao
2011-01-01
Single crystalline CdTe branched nanowires and well-aligned nanorod arrays were simultaneously synthesized by a simple chemical vapor deposition (CVD) technique. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) and selected area electronic diffraction (SAED) were used to study the crystalline structure, composition and morphology of different samples. Vapor-liquid-solid (VLS) and vapor-solid (VS) processes were proposed for the formation of the CdTe branched nanowires and nanorod arrays, respectively. As-grown CdTe nanorod arrays show a strong red emission band centered at about 620 nm, which can be well fitted by two Gaussian curves centered at 610 nm and 635 nm, respectively.
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Synthesis of high aspect ratio ZnO nanowires with an inexpensive handcrafted electrochemical setup
Energy Technology Data Exchange (ETDEWEB)
Taheri, Ali, E-mail: at1361@aut.ac.ir, E-mail: atahery@aeoi.org.ir [Nuclear Science and Technology Institute (Iran, Islamic Republic of); Saramad, Shahyar; Setayeshi, Saeed [Amirkabir University of Technology, Faculty of Energy Engineering and Physics (Iran, Islamic Republic of)
2016-12-15
In this work, high aspect ratio zinc oxide nanowires are synthesized using templated one-step electrodeposition technique. Electrodeposition of the nanowires is done using a handcrafted electronic system. Nuclear track-etched polycarbonate membrane is used as a template to form the high aspect ratio nanowires. The result of X-ray diffraction and scanning electron microscopy shows that nanowires with a good crystallinity and an aspect ratio of more than 30 can be achieved in a suitable condition. The height of electrodeposited nanowires reaches to about 11 μm. Based on the obtained results, high aspect ratio ZnO nanowires can be formed using inexpensive electrodeposition setup with an acceptable quality.
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Functionalization of lanthanum hydroxide nanowires by atom transfer radical polymerization
International Nuclear Information System (INIS)
Zhou Mi; Yuan Jinying; Yuan Weizhong; Yin Yingwu; Hong Xiaoyin
2007-01-01
Atom transfer radical polymerization (ATRP) has been used to prepare a core-shell hybrid nanostructure successfully: a hard core of single-crystalline lanthanum hydroxide nanowires and a soft shell of polystyrene (PS) brushes. Transmission electron microscopy (TEM) images indicated that the resulting products presented special structures and different thicknesses of polymer layers. The chemical components and grafted PS quantities of the samples were measured by Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analysis (TGA). The polymers showed narrow polydispersity, which proved that the lanthanum hydroxide nanowires initiated the 'living'/controlled polymerization of styrene. With the modifiability of lanthanum hydroxide nanowires, the solubility increased, which affords a new way to functionalize nanowires
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A novel solution-phase route for the synthesis of crystalline silver nanowires
International Nuclear Information System (INIS)
Liu Yang; Chu Ying; Yang Likun; Han Dongxue; Lue Zhongxian
2005-01-01
A unique solution-phase route was devised to synthesize crystal Ag nanowires with high aspect-ratio (8-10 nm in diameter and length up to 10 μm) by the reduction of AgNO 3 with Vitamin C in SDS/ethanol solution. The resultant nanoproducts were characterized by transmission electron microscope (TEM), X-ray diffraction (XRD) and electron diffraction (ED). A soft template mechanism was put forward to interpret the formation of metal Ag nanowires
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Directory of Open Access Journals (Sweden)
Yüzer Hayrettin
2010-01-01
Full Text Available Abstract A vertically aligned Pd nanowire array was successfully fabricated on an Au/Ti substrate using an anodic aluminum oxide (AAO template by a direct voltage electrodeposition method at room temperature using diluted neutral electrolyte. The fabrication of Pd nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The AAO template and the Pd nanowires were characterized by scanning electron microscopy (SEM, energy-dispersive X-ray (EDX methods and X-Ray diffraction (XRD. It was observed that the Pd nanowire array was standing freely on an Au-coated Ti substrate after removing the AAO template in a relatively large area of about 5 cm2, approximately 50 nm in diameter and 2.5 μm in length with a high aspect ratio. The nucleation rate and the number of atoms in the critical nucleus were determined from the analysis of current transients. Pd nuclei density was calculated as 3.55 × 108 cm−2. Usage of diluted neutral electrolyte enables slower growing of Pd nanowires owing to increase in the electrodeposition potential and thus obtained Pd nanowires have higher crystallinity with lower dislocations. In fact, this high crystallinity of Pd nanowires provides them positive effect for sensor performances especially.
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Growth and Raman spectroscopy studies of gold-free catalyzed semiconductor nanowires
Energy Technology Data Exchange (ETDEWEB)
Zardo, Ilaria
2010-12-15
The present Ph.D. thesis proposes two aims: the search for catalysts alternative to gold for the growth of silicon nanowires and the investigation of the structural properties of the gold-free catalyzed Si, Ge, and GaAs nanowires. The successful growth of gold free catalyzed silicon nanowires was obtained using Ga and In as catalyst. Hydrogen plasma conditions were needed during the growth process. We proposed a growth mechanism where the role of the hydrogen plasma is taken into account. The influence of the growth conditions on nanowire growth morphology and structural properties was investigated in detail. The TEM studies showed the occurrence of different kind of twin defects depending on the nanowire growth direction. The intersection of twins in different spatial directions in <111>-oriented nanowires or the periodicity of highly dense twins in <112>-oriented nanowires leads to the formation of hexagonal domains embedded in the diamond silicon structure. A simple crystallographic model which illustrates the formation of the hexagonal phase was proposed. The presence of the hexagonal domains embedded in the diamond silicon structure was investigated also by means of Raman spectroscopy. The measured frequencies of the E2g and A1g modes were found to be in agreement with frequencies expected from phonon dispersion folding. An estimation of the percentage of hexagonal structure with respect to the cubic structure was given. The relative percentage of the two structures was found to change with growth temperature. Spatially resolved Raman scattering experiments were also realized on single Si nanowires. The lattice dynamics of gold-free catalyzed Ge and GaAs nanowires was studied by means of Raman spectroscopy. We performed spatially resolved Raman spectroscopy experiments on single crystalline- amorphous core-shell Ge nanowires. The correlation with TEM studies on nanowires grown under the same conditions and with AFM measurements realized of the same nanowires
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PREFACE: Synthesis and integration of nanowires
Samuelson, L.
2006-06-01
The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.
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Effect of indium and antimony doping in SnS single crystals
Energy Technology Data Exchange (ETDEWEB)
Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.
2015-03-15
Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.
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Tuning electronic properties of In2O3 nanowires by doping control
International Nuclear Information System (INIS)
Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.
2004-01-01
We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications
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International Nuclear Information System (INIS)
Wang Meng; Zhou Yang; Chen Dongzhong; Duan Junfei
2016-01-01
In this work, azobenzene mesogen-containing tin thiolates have been synthesized, which possess ordered lamellar structures persistent to higher temperature and serve as liquid crystalline precursors. Based on the preorganized tin thiolate precursors, SnS nanocrystals encapsulated with in-situ N-doped carbon layer have been achieved through a simple solventless pyrolysis process with the azobenzene mesogenic thiolate precursor served as Sn, S, N, and C sources simultaneously. Thus prepared nanocomposite materials as anode of lithium ion batteries present a large specific capacity of 604.6 mAh·g −1 at a current density of 100 mA·g −1 , keeping a high capacity retention up to 96% after 80 cycles, and display high rate capability due to the synergistic effect of well-dispersed SnS nanocrystals and N-doped carbon layer. Such encouraging results shed a light on the controlled preparation of advanced nanocomposites based on liquid crystalline metallomesogen precursors and may boost their novel intriguing applications. (special topic)
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Future Muon Source Possibilities at the SNS
Energy Technology Data Exchange (ETDEWEB)
Williams, Travis J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); MacDougall, Prof. Gregory J. [Univ. of Illinois, Urbana-Champaign, IL (United States)
2017-06-01
The workshop “Future Muon Source Possibilities at the SNS” was held September 1-2, 2016 at Oak Ridge National Laboratory. The workshop aimed to examine the technical feasibility and scientific need to construct a μSR and/or β-NMR facility at the SNS. During the course of the workshop it became evident that recently developed technology could enable the development of a world leading pulsed muon source at SNS, without impacting the neutron science missions of the SNS. The details are discussed below.
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Surface roughness induced electron mobility degradation in InAs nanowires
International Nuclear Information System (INIS)
Wang Fengyun; Yip, Sen Po; Han, Ning; Fok, KitWa; Lin, Hao; Hou, Jared J; Dong, Guofa; Hung, Tak Fu; Chan, K S; Ho, Johnny C
2013-01-01
In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm 2 V −1 s −1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance. (paper)
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Characterization of silver-gallium nanowires for force and mass sensing applications
International Nuclear Information System (INIS)
Biedermann, Laura B; Reifenberger, Ronald G; Tung, Ryan C; Raman, Arvind; Yazdanpanah, Mehdi M; Cohn, Robert W
2010-01-01
We investigate the mechanical properties of cantilevered silver-gallium (Ag 2 Ga) nanowires using laser Doppler vibrometry. From measurements of the resonant frequencies and associated operating deflection shapes, we demonstrate that these Ag 2 Ga nanowires behave as ideal Euler-Bernoulli beams. Furthermore, radial asymmetries in these nanowires are detected through high resolution measurements of the vibration spectra. These crystalline nanowires possess many ideal characteristics for nanoscale force and mass sensing, including small spring constants (as low as 10 -4 N m -1 ), high frequency bandwidth with resonance frequencies in the 0.02-10 MHz range, small suspended mass (picograms), and relatively high Q-factors (∼2-50) under ambient conditions. We evaluate the utility of Ag 2 Ga nanowires for nanocantilever applications, including ultrasmall mass and high frequency bandwidth piconewton force detection.
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Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency.
May, Brelon J; Belz, Matthew R; Ahamed, Arshad; Sarwar, A T M G; Selcu, Camelia M; Myers, Roberto C
2018-04-24
Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride optoelectronics offer the advantage of strain compliance and high crystalline quality growth on a variety of inexpensive substrates. However, nanowire LEDs exhibit an inherent property distribution, resulting in uneven current spreading through macroscopic devices that consist of millions of individual nanowire diodes connected in parallel. Despite being electrically connected, only a small fraction of nanowires, sometimes current in the ensemble devices. Burn-in electronic conditioning is performed by applying a short-term overload voltage; the nanoshorts experience very high current density, sufficient to render them open circuits, thereby forcing a new current path through more nanowire LEDs in an ensemble device. Current-voltage measurements of individual nanowires are acquired using conductive atomic force microscopy to observe the removal of nanoshorts using burn-in. In macroscopic devices, this results in a 33× increase in peak EL and reduced leakage current. Burn-in conditioning of nanowire ensembles therefore provides a straightforward method to mitigate nonuniformities inherent to nanowire devices.
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Intercalation of organic molecules into SnS2 single crystals
International Nuclear Information System (INIS)
Toh, M.L.; Tan, K.J.; Wei, F.X.; Zhang, K.K.; Jiang, H.; Kloc, C.
2013-01-01
SnS 2 is a layered semiconductor with a van der Waals gap separating the covalently bonded layers. In this study, post-synthesis intercalation of donor organic amine molecules, such as ethylenediamine (en), into tin disulfide and secondary intercalation of p-phenylenediamine (PPD) and 1, 5-naphthalenediamine (NDA) into SnS 2e n have been verified with X-ray diffraction. PPD and NDA did not intercalate directly even during prolonged annealing but replaced en readily if en was already present in the van der Waals gap. The c-lattice dilation is proportional to the intercalant size. Unit cell lattices of intercalated products were determined from the positions of the X-ray diffraction peaks. Optical images taken during the intercalation showed that intercalation progressed from the periphery towards the interior of the crystal. TEM diffraction patterns in the [0 0 1] direction of SnS 2 after intercalation revealed defects and stacking mismatches among the SnS 2 layers caused by the intercalation. UV–Vis absorption studies showed a red shift in the band edge of the SnS 2 material after intercalation. The band edge was 2.2 eV for pristine SnS 2 ; after intercalation with en or PPD, the absorbance spectra band edges shifted to approximately 0.7 eV or 0.5 eV, respectively. - Graphical Abstract: SnS 2 single crystals were intercalated with organic amine molecules such as ethylenediamine, phenylenediamine and naphthalenediamine. Absorption studies showed red shift of band edge after intercalation, which was consistent with optical observations. X-ray diffraction indicated lattice dilation in the c-lattice of SnS 2 after intercalation. Highlights: ► Organic molecules intercalated inhomogenously between covalently bonded SnS 2 layers. ► Ethylenediamine (en) intercalate directly into SnS 2 . ► Phenylenediamine (PPD) and naphthalenediamine (NDA) can be intercalated into SnS 2 secondary. ► In a secondary intercalation the bonds between layers are weakened by direct
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Synthesis of metallic ReO3 nanowires
International Nuclear Information System (INIS)
Myung, Dongshin; Lee, Yumin; Lee, Jaeyeon; Kim, Myung Hwa; Yu, Hak Ki; Lee, Jong-Lam; Baik, Jeong Min; Kim, Woong
2010-01-01
We present the synthesis of highly crystalline metallic rhenium trioxide (ReO 3 ) nanowires via a simple physical vapor transport at 300 C for the first time. Based on HRTEM, the ReO 3 nanowires exhibit a core of perfect cubic perovskite-type single crystal structure with a shell of thin amorphous and disordered structures of less than 2 nm in the near surface layers. Possibly this is due to proton intercalation induced by the surface reaction of single crystal ReO 3 with water. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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SNS project-wide beam current monitors
International Nuclear Information System (INIS)
Kesselman, M.; Witkover, R.; Doolittle, L.; Power, J.
2000-01-01
A consortium of national laboratories is constructing the Spallation Neutron Source [1] (SNS) to be installed at Oak Ridge National Laboratory. There are signal similarities that exist in the beam diagnostic instrumentation that could permit common designs. This paper will focus on the beam current monitoring requirements, and the methods under consideration to measure beam current in various locations throughout the SNS facility
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Zn-dopant dependent defect evolution in GaN nanowires
Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin
2015-10-01
Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta
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The influence of thermal annealing on structure and oxidation of iron nanowires
Directory of Open Access Journals (Sweden)
Krajewski Marcin
2015-03-01
Full Text Available Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic field. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta. At higher Ta, hematite was the dominant phase in the nanowires.
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Preparation and characterization of electrodeposited cobalt nanowires
International Nuclear Information System (INIS)
Irshad, M. I.; Mohamed, N. M.; Ahmad, F.; Abdullah, M. Z.
2014-01-01
Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl 2 Ðœ‡6H2O salt solution was used, which was buffered with H 3 BO 3 and acidified by dilute H 2 SO 4 to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications
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Preparation and characterization of electrodeposited cobalt nanowires
Energy Technology Data Exchange (ETDEWEB)
Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)
2014-10-24
Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.
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Networked Attached Devices at SNS
Blokland, W
2003-01-01
The Spallation Neutron Source (SNS) diagnostic instruments at Oak Ridge National Laboratory are based on the Network Attached Device (NAD) concept. Each pickup or sensor has its own resources such as timing, data acquisition and processing. NADs are individually connected to the network, thus reducing the brittleness inherent in tightly coupled systems. This architecture allows an individual device to fail or to be serviced or removed without disrupting other devices. This paper describes our implementation of the nearly 400 NADs to be deployed. The hardware consists of rack-mounted PCs with standard motherboards and PCI data-acquisition boards. The software environment is based on LabVIEW and EPICS. LabVIEW supports the agile development demanded by modern diagnostic systems. EPICS is the control system standard for the entire SNS facility. To achieve high performance, LabVIEW and EPICS communicate through shared memory. SNS diagnostics are developed by a multi-laboratory partnership including ORNL, BNL, LAN...
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Michailov, Michail; Ranguelov, Bogdan
2018-03-01
We present a model for hole-mediated spontaneous breakdown of ahomoepitaxial two-dimensional (2D) flat nanowire based exclusively on random, thermally-activated motion of atoms. The model suggests a consecutive three-step mechanism driving the rupture and complete disintegration of the nanowire on a crystalline surface. The breakdown scenario includes: (i) local narrowing of a part of the stripe to a monatomic chain, (ii) formation of a recoverable single vacancy or a 2D vacancy cluster that causes temporary nanowire rupture, (iii) formation of a non-recoverable 2D hole leading to permanent nanowire breakdown. These successive events in the temporal evolution of the nanowire morphology bring the nanowire stripe into an irreversible unstable state, leading to a dramatic change in its peculiar physical properties and conductivity. The atomistic simulations also reveal a strong increase of the nanowire lifetime with an enlargement of its width and open up a way for a fine atomic-scale control of the nanowire lifetime and structural, morphological and thermodynamic stability.
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The Modulation of Optical Property and its Correlation with Microstructures of ZnO Nanowires
Directory of Open Access Journals (Sweden)
Hope Greg
2009-01-01
Full Text Available Abstract ZnO nanowires with both good crystallinity and oxygen vacancies defects were synthesized by thermal oxidation of Zn substrate pretreated in concentrated sulfuric acid under the air atmosphere, Ar- and air-mixed gas stream. The photoluminescence spectra reveal that only near-band-edge (NBE emission peak was observed for the sample grown in the air atmosphere; the broad blue–green and the red-shifted NBE emission peaks were observed for the sample grown in the mixed gas stream, indicating that the sample grown in the mixed gas stream has a defective structure and its optical properties can be modulated by controlling its structure. The high-resolution transmission electron microscope and the corresponding structural simulation confirm that the oxygen vacancies exist in the crystal of the nanowires grown in the mixed gas stream. The ZnO nanowires with oxygen vacancies defects exhibit better photocatalytic activity than the nanowires with good crystallinity. The photocatalytic process obeys the rules of first-order kinetic reaction, and the rate constants were calculated.
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Oxidation of InP nanowires: a first principles molecular dynamics study.
Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo
2016-11-16
InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.
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Silicon Nanowire Fabrication Using Edge and Corner Lithography
Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof
2010-01-01
This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features
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Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.
Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos
2011-02-09
We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.
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International Nuclear Information System (INIS)
Avellaneda, David; Delgado, Guadalupe; Nair, M.T.S.; Nair, P.K.
2007-01-01
Chemically deposited SnS thin films possess p-type electrical conductivity. We report a photovoltaic structure: SnO 2 :F-CdS-SnS-(CuS)-silver print, with V oc > 300 mV and J sc up to 5 mA/cm 2 under 850 W/m 2 tungsten halogen illumination. Here, SnO 2 :F is a commercial spray-CVD (Pilkington TEC-8) coating, and the rest deposited from different chemical baths: CdS (80 nm) at 333 K, SnS (450 nm) and CuS (80 nm) at 293-303 K. The structure may be heated in nitrogen at 573 K, before applying the silver print. The photovoltaic behavior of the structure varies with heating: V oc ∼ 400 mV and J sc 2 , when heated at 423 K in air, but V oc decreases and J sc increases when heated at higher temperatures. These photovoltaic structures have been found to be stable over a period extending over one year by now. The overall cost of materials, simplicity of the deposition process, and possibility of easily varying the parameters to improve the cell characteristics inspire further work. Here we report two different baths for the deposition of SnS thin films of about 500 nm by chemical deposition. There is a considerable difference in the nature of growth, crystalline structure and chemical stability of these films under air-heating at 623-823 K or while heating SnS-CuS layers, evidenced in XRF and grazing incidence angle XRD studies. Heating of SnS-CuS films results in the formation of SnS-Cu x SnS y . 'All-chemically deposited photovoltaic structures' involving these materials are presented
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Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires
Energy Technology Data Exchange (ETDEWEB)
Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)
2009-11-15
In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.
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Autoclave growth, magnetic, and optical properties of GdB6 nanowires
Han, Wei; Wang, Zhen; Li, Qidong; Liu, Huatao; Fan, Qinghua; Dong, Youzhong; Kuang, Quan; Zhao, Yanming
2017-12-01
High-quality single crystalline gadolinium hexaboride (GdB6) nanowires have been successfully prepared at very low temperatures of 200-240 °C by a high pressure solid state (HPSS) method in an autoclave with a new chemical reaction route, where Gd, H3BO3, Mg and I2 were used as raw materials. The crystal structure, morphology, valence, magnetic and optical absorption properties were investigated using XRD, FESEM, HRTEM, XPS, SQUID magnetometry and optical measurements. HRTEM images and SAED patterns reveal that the GdB6 nanowires are single crystalline with a preferred growth direction along [001]. The XPS spectrum suggests that the valence of Gd ion in GdB6 is trivalent. The effective magnetic momentum per Gd3+ in GdB6 is about 6.26 μB. The optical properties exhibit weak absorption in the visible light range, but relatively strong absorbance in the NIR and UV range. Low work function and high NIR absorption can make GdB6 nanowires a potential solar radiation shielding material for solar cells or other NIR blocking applications.
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Effects of annealing on evaporated SnS thin films
International Nuclear Information System (INIS)
Samsudi Sakrani; Bakar Ismail
1994-01-01
The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound
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Effects of annealing on evaporated SnS thin films
Energy Technology Data Exchange (ETDEWEB)
Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics
1994-12-31
The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.
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Growth and photovoltaic performance of SnS quantum dots
Energy Technology Data Exchange (ETDEWEB)
Deepa, K.G., E-mail: deepachaithanya@gmail.com [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore (India); Nagaraju, J. [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore (India)
2012-08-01
Highlights: Black-Right-Pointing-Pointer Orthorhombic SnS quantum dots are synthesized by chemical method. Black-Right-Pointing-Pointer HOMO-LUMO level alignments confirmed the electron transport from SnS to TiO{sub 2}. Black-Right-Pointing-Pointer Cell characteristics are analyzed with different size quantum dots. Black-Right-Pointing-Pointer FF increased drastically from 15 to 51% on adding a buffer layer to the structure. Black-Right-Pointing-Pointer The SnS QDSSC showed highest V{sub oc} of 504 mV and 2.3 mA/cm{sup 2}. - Abstract: Tin sulphide (SnS) quantum dots of size ranging from 2.4 to 14.4 nm are prepared by chemical precipitation method in aqueous media. Growth of the SnS particles is monitored by controlling the deposition time. Both XRD and SAED patterns confirm that the particles possess orthorhombic structure. The uncapped SnS particles showed secondary phases like Sn{sub 2}S{sub 3} and SnS{sub 2} which is visible in the SAED pattern. From the electrochemical characterization, HOMO-LUMO levels of both TiO{sub 2} and SnS are determined and the band alignment is found to be favorable for electron transfer from SnS to TiO{sub 2}. Moreover, the HOMO-LUMO levels varied for different particle sizes. Solar cell is fabricated by sensitizing porous TiO{sub 2} thin film with SnS QDs. Cell structure is characterized with and without buffer layer between FTO and TiO{sub 2}. Without the buffer layer, cell showed an open circuit voltage (V{sub oc}) of 504 mV and short circuit current density (J{sub sc}) of 2.3 mA/cm{sup 2} under AM1.5 condition. The low fill factor of this structure (15%) is seen to be increased drastically to 51%, on the incorporation of the buffer layer. The cell characteristics are analyzed using two different size quantum dots.
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Ultrasonic synthesis of In-doped SnS nanoparticles and their physical properties
Jamali-Sheini, Farid; Cheraghizade, Mohsen; Yousefi, Ramin
2018-05-01
Indium (In)-doped Tin (II) Sulfide (SnS) nanoparticles (NPs) were synthesized by an ultra-sonication method and their optical, electrical, dielectric and photocatalytic properties were investigated. XRD patterns of the obtained NPs indicated formation of orthorhombic polycrystalline SnS. Field emission scanning electron microscopy exhibited flower-like NPs with particle sizes below 100 nm for both SnS and In-doped SnS samples. Optical analysis showed a decrease in energy band gap of SnS NPs upon In doping. In addition, electrical results demonstrated p-type nature of the synthesized SnS NPs and enhanced electrical conductivity of the NPs due to increased tin vacancy. Dielectric experiments on SnS NPs suggested an electronic polarizations effect to be responsible for changing dielectric properties of the particles, in terms of frequency. Finally, photocatalytic experiments revealed that high degradation power can be obtained using In-doped SnS NPs.
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Growth and characterization of bismuth telluride nanowires
Energy Technology Data Exchange (ETDEWEB)
Picht, Oliver
2010-05-26
Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)
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Growth and characterization of bismuth telluride nanowires
International Nuclear Information System (INIS)
Picht, Oliver
2010-01-01
Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)
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Lasing in robust cesium lead halide perovskite nanowires
Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong
2016-01-01
The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172
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Simple hydrothermal synthesis and sintering of Na0.5Bi0.5TiO3 nanowires
International Nuclear Information System (INIS)
Jiang Xiangping; Lin Mei; Tu Na; Chen Chao; Zhou Shulan; Zhan Hongquan
2011-01-01
Highlights: → Single-crystalline NBT nanowires were synthesized using a simple hydrothermal route. → Reaction time can significantly influence the growth behavior of powders. → 1D growth mechanism of NBT corresponds to the dissolution-recrystallization mechanism. → NBT ceramics derived from nanowires showed typical characteristics of relax or ferroelectrics. - Abstract: Single-crystalline Na 0.5 Bi 0.5 TiO 3 (NBT) nanowires, with diameters of 100 nm and lengths of about 4 μm, were synthesized by using a simple hydrothermal method. Phase composition, morphology and microstructure of the as-prepared powders were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM). The effects of reaction temperature and reaction time on precipitation of the NBT nanowires were investigated. It was found that reaction time significantly influenced the growth behavior of the powders in the hydrothermal system. Based on the experimental results, the one-dimensional (1D) growth mechanism of the NBT was governed by a dissolution-recrystallization mechanism. NBT ceramics derived from the nanowires showed typical characteristics of relaxor ferroelectrics, with diffuseness exponent γ of as high as 1.73.
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Preparation of aligned W{sub 18}O{sub 49} nanowire clusters with high photocatalytic activity
Energy Technology Data Exchange (ETDEWEB)
Zhang, Ning [State Key Laboratory of Inorganic Synthesis & Preparative Chemistry, Jilin University, Changchun 130012 (China); Zhao, Yafei, E-mail: zhaoyafei007@126.com [State Key Laboratory of Inorganic Synthesis & Preparative Chemistry, Jilin University, Changchun 130012 (China); School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, Henan 450001 (China); Lu, Yanjie [School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, Henan 450001 (China); Zhu, Guangshan, E-mail: zhugs@jlu.edu.cn [State Key Laboratory of Inorganic Synthesis & Preparative Chemistry, Jilin University, Changchun 130012 (China)
2017-04-15
Highlights: • Aligned W{sub 18}O{sub 49} nanowire clusters were prepared by a facile hydrothermal method. • W{sub 18}O{sub 49} has unique structure, high degree of crystallinity and large surface area. • W{sub 18}O{sub 49} nanowire clusters exhibited high photocatalytic degradation activity. - Abstract: The aligned W{sub 18}O{sub 49} nanowire clusters were synthesized via a facile and economic ethanol-assisted hydrothermal method using peroxopolytungstic acid as precursor. Results show that the as-prepared W{sub 18}O{sub 49} exhibits a high yield and ultrathin structure with preferential growth direction along [0 1 0]. The amount of peroxopolytungstic acid and reaction time play significant role on the morphology of W{sub 18}O{sub 49} nanowires. The nanowires have unique structure, high degree of crystallinity, large specific surface area, and large number of defects such as oxygen vacancies, which are responsible for their high photocatalytic performance for degradation of methylene blue. The photocatalytic conversion of methylene blue can reach above 98% after degradation. W{sub 18}O{sub 49} also exhibits good photodegradation stability after five cycles of reuse. The results demonstrate that the as-prepared W{sub 18}O{sub 49} nanowire clusters are expected to be a promising material for applications in the field of environment.
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Synthesis and characterization of MnO2 nanowires
Ghorbani, Mohammad Hossein; Davarpanah, Abdol Mahmood
2017-01-01
Manganese oxides are of more interest to researchers because of their ability as catalysts and lithium batteries. In this research, MnO2 nanowires with diameter about 45 nm were synthesized by sol-gel method at room temperature (RT). Effect of increasing the annealing temperature from 400∘C to 600∘C on crystalline structure of nanostructure were studied and average crystallite size was estimated about 22 nm. X-ray Diffraction (XRD) method, Energy-Dispersive X-ray Diffraction (EDXD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) were used to characterize the nanowires of MnO2.
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Effect of diffusion from a lateral surface on the rate of GaN nanowire growth
International Nuclear Information System (INIS)
Sibirev, N. V.; Tchernycheva, M.; Cirlin, G. E.; Patriarche, G.; Harmand, J. C.; Dubrovskii, V. G.
2012-01-01
The kinetics of the growth of GaN crystalline nanowires on a Si (111) surface with no catalyst is studied experimentally and theoretically. Noncatalytic GaN nanowires were grown by molecular-beam epitaxy with AlN inserts, which makes it possible to determine the rate of the vertical growth of nanowires. A model for the formation of GaN nanowires is developed, and an expression for their rate of growth is derived. It is shown that, in the general case, the dependence of the rate of growth on the nanowire diameter has a minimum. The diameter corresponding to the experimentally observed minimum of the rate of growth steadily increases with increasing diffusion flux from the lateral surface.
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Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices
Ivanov, Yurii P.
2016-03-31
Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.
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Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices
Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jü rgen; Chubykalo-Fesenko, Oksana; Vá zquez, Manuel
2016-01-01
Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.
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Effect of size on fracture and tensile manipulation of gold nanowires
International Nuclear Information System (INIS)
Wang, Fenying; Dai, Yanfeng; Zhao, Jianwei; Li, Qianjin; Zhang, Bin
2014-01-01
The fracture of metallic nanowires has attracted much attention owing to its reliability of application in nanoelectromechanical system. In this paper, we studied the fracture of [100] single-crystal gold nanowire subjected to uniaxial tension. The statistical breaking position distributions showed that the size effects had dominated the deformation and fracture of nanowires, and the quasi-static tensile deformations are insensitive to the styles of tensile rates. Furthermore, it was observed that the small-sized nanowire broke in the middle with disordered crystalline structure; for the middle-sized nanowire, although slippage plane had maintained the lattice degree, the fracture also happened in the middle due to symmetric tension; for the large-sized nanowire, the slippage was destroyed by symmetric tension, which induced the broken neck at one end of the nanowire. When the nanowire width is less than 5a (“a” means lattice constant, 0.408 nm for gold), the mechanical strength is relatively strong with obvious uncertainty, which can be attributed to the surface atom effect; when the width is larger than 5a, the influence of size on the mechanical property is more obvious at the constant strain rate than that at the absolute rate. Finally, the mechanical strength of the nanowire decreases with the size increasing
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Template-assisted fabrication of tin and antimony based nanowire arrays
Zaraska, Leszek; Kurowska, Elżbieta; Sulka, Grzegorz D.; Jaskuła, Marian
2012-10-01
Antimony nanowires with diameters ranging from 35 nm to 320 nm were successfully prepared by simple, galvanostatic electrodeposition inside the pores of anodic alumina membranes from a citrate based electrolyte. The use of the potassium antimonyl tartrate electrolyte for electrodeposition results in the formation of Sb/Sb2O3 nanowires. The structural features of the nanowire arrays were investigated by FE-SEM, and the nanowire composition was confirmed by EDS and XRD measurements. A distinct peak at about 27.5° in the XRD pattern recorded for nanowires formed in the tartrate electrolyte was attributed to the presence of co-deposited Sb2O3. Three types of dense arrays of Sn-SnSb nanowires with diameters ranging from 82 nm to 325 nm were also synthesized by DC galvanostatic electrodeposition into the anodic aluminum oxide (AAO) membranes for the first time. Only Sn and SnSb peaks appeared in the XRD pattern and both phases seem to have a relatively high degree of crystallinity. The influence of current density applied during electrodeposition on the composition of nanowires was investigated. It was found that the Sb content in fabricated nanowires decreases with increasing current density. The diameters of all synthesized nanowires roughly correspond to the dimensions of the nanochannels of AAO templates used for electrodeposition.
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Mechanical response of CH3NH3PbI3 nanowires
Ćirić, L.; Ashby, K.; Abadie, T.; Spina, M.; Duchamp, M.; Náfrádi, B.; Kollár, M.; Forró, L.; Horváth, E.
2018-03-01
We report a systematic study of the mechanical response of methylammonium lead triiodide CH3NH3PbI3 nanowires by employing bending measurements using atomic force microscope on suspended wires over photo-lithographically patterned channels. Force-deflection curves measured at room temperature give a Young's modulus between 2 and 14 GPa. This broad range of values is attributed to the variations in the microcrystalline texture of halide perovskite nanowires. The mechanical response of a highly crystalline nanowire is linear with force and has a brittle character. The braking modulus of 48 ± 20 MPa corresponds to 100 μm of radius of curvature of the nanowires, rendering them much better structures for flexible devices than spin coated films. The measured moduli decrease rapidly if the NW is exposed to water vapor.
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Spallation Neutron Source (SNS)
Federal Laboratory Consortium — The SNS at Oak Ridge National Laboratory is a next-generation spallation neutron source for neutron scattering that is currently the most powerful neutron source in...
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Shahid, Muhammad; Liu, Jingling; Ali, Zahid; Shakir, Imran; Warsi, Muhammad Farooq
2013-01-01
We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.
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Shahid, Muhammad
2013-05-01
We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.
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Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates
International Nuclear Information System (INIS)
Kwon, Bong Jun; Lee, Kyung Moon; Shin, Hae-Young; Kim, Jinwoong; Liu, Jinzhang; Yoon, Seokhyun; Lee, Soonil; Ahn, Y.H.; Park, Ji-Yong
2012-01-01
Highlights: ► Arrays of vertical ultra-long ZnO nanowires with lengths upto 300 μm. ► Controls of lengths and diameters of vertical arrays of ZnO nanowires on SiO 2 substrates. ► Luminescent and electrical properties of ZnO nanowires prepared with different growth conditions. - Abstract: Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO 2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.
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Energy Technology Data Exchange (ETDEWEB)
Zhang, Shanju; Pelligra, Candice I.; Keskar, Gayatri; Majewski, Pawel W.; Taylor, Andre D.; Pfefferle, Lisa D.; Osuji, Chinedum O. [Department of Chemical and Environmental Engineering, Yale University, New Haven, CT (United States); Jiang, Jie; Ismail-Beigi, Sohrab [Department of Applied Physics, Yale University, New Haven, CT (United States)
2012-01-03
An entirely bottom-up approach for the preparation of liquid crystalline suspensions of core-shell nanowires for ordered bulk heterojunction photovoltaics is demonstrated. Side-on attachment of polythiophene derivatives to ZnO nanowires promotes a co-axial polymer backbone-nanowire arrangement which favors high hole mobility. This strategy offers structural control over multiple length scales and a viable means of fabricating ordered films over large areas. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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International Nuclear Information System (INIS)
Sun, Shibin; Chang, Xueting; Li, Zhenjiang
2010-01-01
Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.
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Energy Technology Data Exchange (ETDEWEB)
Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)
2010-09-15
Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.
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International Nuclear Information System (INIS)
Sundelin, Ronald M.
2001-01-01
The Spallation Neutron Source (SNS) decided in early 2000 to use superconducting RF (SRF) in the linac at energies above 185 MeV. Since the SNS duty cycle is 6%, the SRF and normal conducting approaches have capital costs which are about the same, but operating costs and future upgradability are improved by using SRF. The current status of cavity and cryomodule development and procurement, including the basis for decisions made, is discussed. The current plan includes use of 805 MHz, 6-cell cavities with geometrical betas of 0.61 and 0.81. There are 33 medium beta and 60 high beta cavities in 11 and 15 cryomodules, respectively. Each cavity (except the 93rd) is powered by a 550 kW pulsed klystron. Issues addressed include choice of peak surface gradient, optimization of cavity shape, selection of a scaled KEK input power coupler, selection of scaled TESLA higher mode couplers, and control of the effects of higher order modes on the beam. (author)
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Energy Technology Data Exchange (ETDEWEB)
Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)
2014-09-15
In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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International Nuclear Information System (INIS)
Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude
2014-01-01
In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Luan, Chuhao; Shao, Yang; Lu, Qi; Gao, Shenghan; Huang, Kai; Wu, Hui; Yao, Kefu
2018-05-17
An efficient and selective catalyst is in urgent need for carbon dioxide electroreduction and silver is one of the promising candidates with affordable costs. Here we fabricated large-scale vertically standing Ag nanowire arrays with high crystallinity and electrical conductivity as carbon dioxide electroreduction catalysts by a simple nanomolding method that was usually considered not feasible for metallic crystalline materials. A great enhancement of current densities and selectivity for CO at moderate potentials was achieved. The current density for CO ( j co ) of Ag nanowire array with 200 nm in diameter was more than 2500 times larger than that of Ag foil at an overpotential of 0.49 V with an efficiency over 90%. The origin of enhanced performances are attributed to greatly increased electrochemically active surface area (ECSA) and higher intrinsic activity compared to those of polycrystalline Ag foil. More low-coordinated sites on the nanowires which can stabilize the CO 2 intermediate better are responsible for the high intrinsic activity. In addition, the impact of surface morphology that induces limited mass transportation on reaction selectivity and efficiency of nanowire arrays with different diameters was also discussed.
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Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires
International Nuclear Information System (INIS)
Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin
2014-01-01
Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice
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Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce
2016-08-24
The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.
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Online vrienden bepalen de overtuigingskracht van SNS-campagnes
van Noort, G.; Antheunis, M.; van Reijmersdal, E.
2011-01-01
Marketers more and more design advertising campaigns especially for Social Network Sites (SNS), with the aim that SNS users forward these campaigns to their online network. By means of a survey, this study investigates whether the persuasiveness of such campaigns is determined by the strength of the
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Flexible InGaN nanowire membranes for enhanced solar water splitting
Elafandy, Rami T.; Elafandy, Rami T.; Min, Jung-Wook; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S.
2018-01-01
III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation
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Selective growth of Ge nanowires by low-temperature thermal evaporation.
Sutter, Eli; Ozturk, Birol; Sutter, Peter
2008-10-29
High-quality single-crystalline Ge nanowires with electrical properties comparable to those of bulk Ge have been synthesized by vapor-liquid-solid growth using Au growth seeds on SiO(2)/Si(100) substrates and evaporation from solid Ge powder in a low-temperature process at crucible temperatures down to 700 °C. High nanowire growth rates at these low source temperatures have been identified as being due to sublimation of GeO from substantial amounts of GeO(2) on the powder. The Ge nanowire synthesis from GeO is highly selective at our substrate temperatures (420-500 °C), i.e., occurs only on Au vapor-liquid-solid growth seeds. For growth of nanowires of 10-20 µm length on Au particles, an upper bound of 0.5 nm Ge deposition was determined in areas of bare SiO(2)/Si substrate without Au nanoparticles.
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In situ electron backscattered diffraction of individual GaAs nanowires
Energy Technology Data Exchange (ETDEWEB)
Prikhodko, S.V. [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)], E-mail: sergey@seas.ucla.edu; Sitzman, S. [Oxford Instruments America, Concord, MA 01742 (United States); Gambin, V. [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Kodambaka, S. [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)
2008-12-15
We suggest and demonstrate that electron backscattered diffraction, a scanning electron microscope-based technique, can be used for non-destructive structural and morphological characterization of statistically significant number of nanowires in situ on their growth substrate. We obtain morphological, crystal phase, and crystal orientation information of individual GaAs nanowires in situ on the growth substrate GaAs(1 1 1) B. Our results, verified using transmission electron microscopy and selected area electron diffraction analyses of the same set of wires, indicate that most wires possess a wurtzite structure with a high density of thin structural defects aligned normal to the wire growth axis, while others grow defect-free with a zincblende structure. The demonstrated approach is general, applicable to other material systems, and is expected to provide important insights into the role of substrate structure on nanowire structure on nanowire crystallinity and growth orientation.
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Recovery of hexagonal Si-IV nanowires from extreme GPa pressure
Energy Technology Data Exchange (ETDEWEB)
Smith, Bennett E. [Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States); Zhou, Xuezhe; Roder, Paden B. [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States); Abramson, Evan H. [Department of Earth and Space Sciences, University of Washington, Seattle, Washington 98195 (United States); Pauzauskie, Peter J., E-mail: peterpz@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States); Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
2016-05-14
We use Raman spectroscopy in tandem with transmission electron microscopy and density functional theory simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's cylindrical morphology. In situ Raman scattering of the longitudinal transverse optical (LTO) mode demonstrates the high-pressure Si-I to Si-II phase transition near 9 GPa. Raman signal of the LTO phonon shows a decrease in intensity in the range of 9–14 GPa. Then, at 17 GPa, it is no longer detectable, indicating a second phase change (Si-II to Si-V) in the 14–17 GPa range. Recovery of exotic phases in individual silicon nanowires from diamond anvil cell experiments reaching 17 GPa is also shown. Raman measurements indicate Si-IV as the dominant phase in pressurized nanowires after decompression. Transmission electron microscopy and electron diffraction confirm crystalline Si-IV domains in individual nanowires. Computational electromagnetic simulations suggest that heating from the Raman laser probe is negligible and that near-hydrostatic pressure is the primary driving force for the formation of hexagonal silicon nanowires.
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Kshirasagar, Krushna J.; Markad, Uddhav S.; Saha, Abhijit; Sharma, Kiran Kumar K.; Sharma, Geeta K.
2017-02-01
Palladium nanoparticles doped polyaniline (Pd-PANI) nanocomposite (NCs) is synthesized in surfactant based liquid crystalline mesophase by chemical oxidation followed by radiolysis. The confinement of the liquid crystalline mesophase facilitates polymerization of aniline monomers and their 1D growth into polyaniline (PANI) nanowires by using ammonium persulfate. The PANI nanowires have an average diameter of 30-40 nm. The in situ radiolytic reduction of palladium ions ensures uniform size distribution of the palladium (Pd) nanoparticles on the surface of the PANI nanowires. The synthesized Pd-PANI nanocomposites show wire like structures of PANI (diameter ~30-40 nm) on which Pd nanoparticles of the size 10 nm are decorated. The identical average diameter of the PANI nanowires before and post gamma irradiation suggest high stability of the PANI nanowires in liquid crystalline mesophase. Surface characterization of the NCs were carried out using BET and XPS. The catalytic activity of Pd-PANI NCs are investigated in the reduction of methylene blue (MB) and 4-nitro phenol (4-NP) by sodium borohydride (NaBH4). The kinetics of the Pd-PANI NCs catalysed reactions are analysed using the Langmuir-Hinshelwood model. The apparent rate constant (k app) for the MB and 4-NP reduction reactions is 29 × 10-3 s-1 and 20 × 10-3 s-1 respectively with an actual Pd catalyst loading of 2.665 × 10-4 ppm. Further, the recyclability of the Pd-PANI NCs catalyst in both the reduction reactions shows the stability of the catalyst up to four reaction cycles tested in this investigation and the multifunctional nature of the catalyst. The study provides a new approach for the directional synthesis of conducting polymer-metal nanocomposites and their possible application as a nanocatalyst in environmental remediation.
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Physical properties of SnS thin films grown by hot wall deposition
International Nuclear Information System (INIS)
Gremenok, V.; Ivanov, V.; Bashkirov, S.; Unuchak, D.; Lazenka, V.; Bente, K.; Tashlykov, I.; Turovets, A.
2010-01-01
Full text : Recently, considerable effort has been invested to gain a better and deeper knowledge of structural and physical properties of metal chalcogenide semiconductors because of their potential application in electrical and photonic devices. Among them, tin sulphide (SnS) has attracted attention because of band gap of 1.3 eV and an absorption coefficient greater than 10 4 cm - 1. Additionally, by using tin sulfide compounds for photovoltaic devices, the production costs are decreased, because these materials are cheap and abundant in nature. For the sythesis of SnS thin films by hot wall deposition, SnS ingots were used as the source materials synthesized from high purity elements (99.999 percent). The thin films were grown onto glass at substrate temperatures between 220 and 380 degrees Celsium. The thickness of the films was in the range of 1.0 - 2.5 μm. The crystal structure and crystalline phases of the materials were studied by XRD using a Siemens D-5000 diffractometer with CuK α (λ = 1.5418 A) radiation. In order to consider instrumental error, the samples were coated by Si powder suspended in acetone. The composition and surface morphology of thin films were investigated by electron probe microanalysis (EPMA) using a CAMECA SX-100, a scanning electron microscope JEOL 6400 and an atomic force microscope (AFM, Model: NT 206), respectively. Depth profiling was performed by Auger electron spectroscopy (AES) using a Perkin Elmer Physical Electronics 590. The electrical resistivity was studied by van der Pauw four-probe technique using silver paste contact. The optical transmittance was carried out using a Varian Cary 50 UV - VIS spectrophotometer in the range 500 - 2000 nm. The as-grown films exhibited a composition with a Sn/S at. percent ratio of 1.06. The AES depth profiles revealed relatively uniform composition through the film thickness. The XRD analysis of the SnS films showed that they were monophase (JCPDS 39-0354), polycrystalline with
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Fabrication of GaInPSb quaternary alloy nanowires and its room temperature electrical properties
Energy Technology Data Exchange (ETDEWEB)
Xu, Yadan; Ma, Liang; Li, Dan; Yang, Yankun; Wan, Qiang [Hunan University, School of Physics and Electronics, Changsha, Hunan (China); Liu, Ruping [Beijing Institute of Graphic Communication, Beijing (China); Dai, Guozhang [Central South University, School of Physics and Electronics, Changsha, Hunan (China)
2017-01-15
GaInPSb quaternary alloy nanowires were first synthesized via a simple chemical vapor deposition method. The synthesized nanowires' length can reach up to 20 μm and diameter ranging from 50 to 100 nm. Raman measurements and high-resolution transmission electron microscopy image illustrate that the as-grown nanowires have a high crystallinity. Room temperature near-infrared photodetector based on as-prepared GaInPSb nanowires was also built for the first time. It shows a good contact with the electrode, and the device has a strong light response to light illumination. This novel near-infrared photodetector may find promising applications in integrated infrared photodetection, information communication, and processing. (orig.)
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SNS EXTRACTION KICKER POWER SUPPLY PROTOTYPE TEST
International Nuclear Information System (INIS)
MI, J.L.; SANDBERG, J.; SANDERS, R.; SOUKAS, A.; ZHANG, W.
2000-01-01
The SNS (Spallation Neutron Source) accumulator ring Extraction System consists of a Fast kicker and a Lambertson Septum magnet. The proposed design will use 14 kicker magnets powered by an Extraction Kicker Power Supply System. They will eject the high power beam from the SNS accumulator ring into RTBT (Ring to Target Beam Tunnel) through a Lambertson Septum magnet. This paper describes some test results of the SNS Extraction Kicker power supply prototype. The high repetition rate of 60 pulse per second operation is the challenging part of the design. In the prototype testing, a 3 kA damp current of 700ns pulse-width, 200 nS rise time and 60 Hz repetition rate at 32 kV PFN operation voltage has been demonstrated. An Extraction kicker power supply system design diagram is depicted
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CLEARING OF ELECTRON CLOUD IN SNS
International Nuclear Information System (INIS)
WANG, L.; LEE, Y.Y.; RAPRIA, D.
2004-01-01
In this paper we describe a mechanism using the clearing electrodes to remove the electron cloud in the Spallation Neutron Source (SNS) accumulator ring, where strong multipacting could happen at median clearing fields. A similar phenomenon was reported in an experimental study at Los Alamos laboratory's Proton Synchrotron Ring (PSR). We also investigated the effectiveness of the solenoid's clearing mechanism in the SNS, which differs from the short bunch case, such as in B-factories. The titanium nitride (TiN) coating of the chamber walls was applied to reduce the secondary electron yield (SEY)
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Thermal resistance measurement of In{sub 3}SbTe{sub 2} nanowires
Energy Technology Data Exchange (ETDEWEB)
Battaglia, J.L.; Saci, A.; De, I. [I2M Laboratory, University of Bordeaux, UMR CNRS 5295, Talence (France); Cecchini, R.; Cecchi, S.; Longo, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Selmo, S.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Milano (Italy)
2017-05-15
The thermal resistance along the thickness of In{sub 3}SbTe{sub 2} crystalline nanowires was measured using the scanning thermal microscopy in 3ω mode. The nanowires were grown by metal organic vapor deposition, exploiting the VLS mechanism induced by Au metal-catalyst nanoparticles and harvested on a SiO{sub 2}/Si substrate. Two nanowires with different thickness (13 and 23 nm) were investigated. The thermal resistance of the nanowires was determined using two different approaches; the first one exploits the experimental data, whereas the second one is more sophisticated, since it involves a minimization procedure. Both methods led to comparable values of the thermal resistance along the transverse direction (thickness) of the nanowire. The obtained results were explained starting from the mean free path of phonons calculated in the In{sub 3}SbTe{sub 2} bulk. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires
Directory of Open Access Journals (Sweden)
Hongbin Cheng
2015-01-01
Full Text Available GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra. The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100 substrates with uniform density. Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.
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International Nuclear Information System (INIS)
Anguita, J V; Sharma, P; Henley, S J; Silva, S R P
2009-01-01
The solid-liquid-solid method (also known as the solid-state method) is used to produce silicon nanowires at the core of silica nanowires with a support catalyst layer structure of nickel and titanium layers sputtered on oxide-coated silicon wafers. This silane-free process is low cost and large-area compatible. Using electron microscopy and Raman spectroscopy we deduce that the wires have crystalline silicon cores. The nanowires show photoluminescence in the visible range (orange), and we investigate the origin of this band. We further show that the nanowires form a random mesh that acts as an efficient optical trap, giving rise to an optically absorbing medium.
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Anguita, J. V.; Sharma, P.; Henley, S. J.; Silva, S. R. P.
2009-11-01
The solid-liquid-solid method (also known as the solid-state method) is used to produce silicon nanowires at the core of silica nanowires with a support catalyst layer structure of nickel and titanium layers sputtered on oxide-coated silicon wafers. This silane-free process is low cost and large-area compatible. Using electron microscopy and Raman spectroscopy we deduce that the wires have crystalline silicon cores. The nanowires show photoluminescence in the visible range (orange), and we investigate the origin of this band. We further show that the nanowires form a random mesh that acts as an efficient optical trap, giving rise to an optically absorbing medium.
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Brain anatomy alterations associated with Social Networking Site (SNS) addiction
He, Qinghua; Turel, Ofir; Bechara, Antoine
2017-01-01
This study relies on knowledge regarding the neuroplasticity of dual-system components that govern addiction and excessive behavior and suggests that alterations in the grey matter volumes, i.e., brain morphology, of specific regions of interest are associated with technology-related addictions. Using voxel based morphometry (VBM) applied to structural Magnetic Resonance Imaging (MRI) scans of twenty social network site (SNS) users with varying degrees of SNS addiction, we show that SNS addic...
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Rapid determination of nanowires electrical properties using a dielectrophoresis-well based system
Constantinou, Marios; Hoettges, Kai F.; Krylyuk, Sergiy; Katz, Michael B.; Davydov, Albert; Rigas, Grigorios-Panagiotis; Stolojan, Vlad; Hughes, Michael P.; Shkunov, Maxim
2017-03-01
The use of high quality semiconducting nanomaterials for advanced device applications has been hampered by the unavoidable growth variability of electrical properties of one-dimensional nanomaterials, such as nanowires and nanotubes, thus highlighting the need for the characterization of efficient semiconducting nanomaterials. In this study, we demonstrate a low-cost, industrially scalable dielectrophoretic (DEP) nanowire assembly method for the rapid analysis of the electrical properties of inorganic single crystalline nanowires, by identifying key features in the DEP frequency response spectrum from 1 kHz to 20 MHz in just 60 s. Nanowires dispersed in anisole were characterized using a three-dimensional DEP chip (3DEP), and the resultant spectrum demonstrated a sharp change in nanowire response to DEP signal in 1-20 MHz frequency range. The 3DEP analysis, directly confirmed by field-effect transistor data, indicates that nanowires of higher quality are collected at high DEP signal frequency range above 10 MHz, whereas lower quality nanowires, with two orders of magnitude lower current per nanowire, are collected at lower DEP signal frequencies. These results show that the 3DEP platform can be used as a very efficient characterization tool of the electrical properties of rod-shaped nanoparticles to enable dielectrophoretic selective deposition of nanomaterials with superior conductivity properties.
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Synthesis of InSb Nanowire Architectures - Building Blocks for Majorana Devices
Car, Diana
Breakthroughs in material development are playing a major role in the emerging field of topological quantum computation with Majorana Zero Modes (MZMs). Due to the strong spin-orbit interaction and large Landé g-factor InSb nanowires are one of the most promising one dimensional material systems in which to detect MZMs. The next generation of Majorana experiments should move beyond zero-mode detection and demonstrate the non-Abelian nature of MZMs by braiding. To achieve this goal advanced material platforms are needed: low-disorder, single-crystalline, planar networks of nanowires with high spin-orbit energy. In this talk I will discuss the formation and electronic properties of InSb nanowire networks. The bottom-up synthesis method we have developed is generic and can be employed to synthesize interconnected nanowire architectures of group III-V, II-VI and IV materials as long as they grow along a direction.
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Transport and structural characterization of solution-processable doped ZnO nanowires
Noriega, Rodrigo
2009-08-18
The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
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Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen
2017-10-19
Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.
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Properties of Fe{sub 8−N}Co{sub N} nanoribbons and nanowires: A DFT approach
Energy Technology Data Exchange (ETDEWEB)
Muñoz, Francisco [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024 (Chile); Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Altbir, D. [Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Departamento de Física, Universidad de Santiago (Chile); Kiwi, Miguel, E-mail: m.kiwi.t@gmail.com [Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago 7800024 (Chile); Centro para el Desarrollo de la Nanociencia y la Nanotecnología, CEDENNA, Avda. Ecuador 3493, Santiago 9170124 (Chile); Morán-López, J.L. [Departamento de Física, Laboratorio Interdisciplinario, Facultad de Ciencias, Universidad Nacional Autónoma de México, México, D.F. (Mexico)
2013-08-15
The structural configurations and magnetic properties of zig-zag nanoribbons and nanowires of Fe{sub 8−N}Co{sub N}, for 0≤N≤8, are calculated within the density functional theory. Both, for the zig-zag nanoribbons and the nanowires, there is a tendency towards forming Fe–Co bonds, while segregation of the Fe and Co is energetically unfavorable. For the nanowire structures a transition from bcc Fe to hcp Co spatial arrangements is observed when N is increased from 4 to 6, in spite of the small size of the systems under investigation. The energy minimization was performed taking into consideration the electronic and magnetic structures, since for each crystalline structure, chemical composition, and short range order, particular magnetic properties of these systems do correspond. The magnetocrystalline anisotropy energy is calculated, and it is found that the easy axis changes from a transverse direction in Fe-rich systems, to the axial direction as the Co concentration increases. It is also found that although there are important variations of the local magnetic moment of the components, and their particular location in the system, the average magnetic moment is an almost linear function of N. - Highlights: ► Properties of Fe{sub 8−N}Co{sub N} nanoribbons and nanowires are calculated ab initio. ► Structural and magnetic properties of nanoribbons and nanowires are calculated. ► Shape and crystalline anisotropies of nanoribbons and nanowires are contrasted.
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International Nuclear Information System (INIS)
Geyer, Nadine; Wollschläger, Nicole; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Fuhrmann, Bodo; Leipner, Hartmut S; Jungmann, Marco; Krause-Rehberg, Reinhard
2015-01-01
A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H_2O_2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology. (paper)
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Formation of self-ordered porous anodized alumina template for growing tungsten trioxide nanowires
Hussain, Tajamal; Shah, Asma Tufail; Shehzad, Khurram; Mujahid, Adnan; Farooqi, Zahoor Hussain; Raza, Muhammad Hamid; Ahmed, Mirza Nadeem; Nisa, Zaib Un
2015-12-01
Uniform porous anodized aluminum oxide (AAO) membrane has been synthesized by two-step anodization for fabricating tungsten trioxide (WO3) nanowires. Under assayed conditions, uniform porous structure of alumina (Al2O3) membrane with long range ordered hexagonal arrangements of nanopores was achieved. The self-assembled template possesses pores of internal diameter of 50 nm and interpore distance ( d int) of 80 nm with a thickness of about 80 µm, i.e., used for fabrication of nanostructures. WO3 nanowires have been fabricated by simple electroless deposition method inside Al2O3 nanopores. SEM images show tungsten trioxide nanowire with internal diameter of about 50 nm, similar to porous diameter of AAO template. XRD results showed that nanowires exist in cubic crystalline state with minor proportion of monoclinic phase.
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Synthesis and characterization of different morphological SnS nanomaterials
International Nuclear Information System (INIS)
Chaki, Sunil H; Chaudhary, Mahesh D; Deshpande, M P
2014-01-01
SnS in three nano forms possessing different morphologies such as particles, whiskers and ribbons were synthesised by chemical route. The morphology variation was brought about in the chemical route synthesis by varying a synthesis parameter such as temperature and influencing the synthesis by use of surfactant. The elemental composition determination by energy dispersive analysis of x-rays (EDAX) showed that all three synthesized SnS nanomaterials were tin deficient. The x-ray diffraction (XRD) study of the three SnS nanomaterials showed that all of them possess orthorhombic structure. The Raman spectra of the three SnS nanomaterials showed that all three samples possess three common distinguishable peaks. In them two peaks lying at 98 ± 1 cm −1 and 224 ± 4 cm −1 are the characteristic A g mode of SnS. The third peak lying at 302 ± 1 cm −1 is associated with secondary Sn 2 S 3 phase. The transmission electron microscopy (TEM) confirmed the respective morphologies. The optical analysis showed that they possess direct as well as indirect optical bandgap. The electrical transport properties study on the pellets prepared from the different nanomaterials of SnS showed them to be semiconducting and p-type in nature. The current–voltage (I–V) plots of the silver (Ag)/SnS nanomaterials pellets for dark and incandescent illumination showed that all configurations showed good ohmic behaviour except Ag/SnS nanoribbons pellet configuration under illumination. All the obtained results are discussed in detail. (paper)
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Preparation of silicon carbide nanowires via a rapid heating process
International Nuclear Information System (INIS)
Li Xintong; Chen Xiaohong; Song Huaihe
2011-01-01
Silicon carbide (SiC) nanowires were fabricated in a large quantity by a rapid heating carbothermal reduction of a novel resorcinol-formaldehyde (RF)/SiO 2 hybrid aerogel in this study. SiC nanowires were grown at 1500 deg. C for 2 h in an argon atmosphere without any catalyst via vapor-solid (V-S) process. The β-SiC nanowires were characterized by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), high-resolution transmission electron microscope (HRTEM) equipped with energy dispersive X-ray (EDX) facility, Fourier transformed infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA). The analysis results show that the aspect ratio of the SiC nanowires via the rapid heating process is much larger than that of the sample produced via gradual heating process. The SiC nanowires are single crystalline β-SiC phase with diameters of about 20-80 nm and lengths of about several tens of micrometers, growing along the [1 1 1] direction with a fringe spacing of 0.25 nm. The role of the interpenetrating network of RF/SiO 2 hybrid aerogel in the carbothermal reduction was discussed and the possible growth mechanism of the nanowires is analyzed.
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Progress with the SNS front-end systems
International Nuclear Information System (INIS)
Keller, R.; Abraham, W.; Ayers, J.J.; Cheng, D.W.; Cull, P.; DiGennaro, R.; Doolittle, L.; Gough, R.A.; Greer, J.B.; Hoff, M.D.; Leung, K.N.; Lewis, S.; Lionberger, C.; MacGill, R.; Minamihara, Y.; Monroy, M.; Oshatz, D.; Pruyn, J.; Ratti, A.; Reijonen, J.; Schenkel, T.; Staples, J.W.; Syversrud, D.; Thomae, R.; Virostek, S.; Yourd, R.
2001-01-01
The Front-End Systems (FES) of the Spallation Neutron Source (SNS) project have been described in detail elsewhere [1]. They comprise an rf-driven H - ion source, electrostatic LEBT, four-vane RFQ, and an elaborate MEBT. These systems are planned to be delivered to the SNS facility in Oak Ridge in June 2002. This paper discusses the latest design features, the status of development work, component fabrication and procurements, and experimental results with the first commissioned beamline elements
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Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
International Nuclear Information System (INIS)
Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E
2006-01-01
Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires
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CuO-In2O3 Core-Shell Nanowire Based Chemical Gas Sensors
Directory of Open Access Journals (Sweden)
Xiaoxin Li
2014-01-01
Full Text Available The CuO-In2O3 core-shell nanowire was fabricated by a two-step method. The CuO nanowire core (NWs was firstly grown by the conventional thermal oxidation of Cu meshes at 500°C for 5 hours. Then, the CuO nanowires were immersed into the suspension of amorphous indium hydroxide deposited from the In(AC3 solution by ammonia. The CuO nanowires coated with In(OH3 were subsequently heated at 600°C to form the crystalline CuO-In2O3 core-shell structure, with In2O3 nanocrystals uniformly anchored on the CuO nanowires. The gas sensing properties of the formed CuO-In2O3 core-shell nanowires were investigated by various reducing gases such as hydrogen, carbon monoxide, and propane at elevated temperature. The sensors using the CuO-In2O3 nanowires show improved sensing performance to hydrogen and propane but a suppressed response to carbon monoxide, which could be attributed to the enhanced catalytic properties of CuO with the coated porous In2O3 shell and the p-n junction formed at the core-shell interface.
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Direct-write fabrication of a nanoscale digital logic element on a single nanowire
International Nuclear Information System (INIS)
Roy, Somenath; Gao Zhiqiang
2010-01-01
In this paper we report on the 'direct-write' fabrication and electrical characteristics of a nanoscale logic inverter, integrating enhancement-mode (E-mode) and depletion-mode (D-mode) field-effect transistors (FETs) on a single zinc oxide (ZnO) nanowire. 'Direct-writing' of platinum metal electrodes and a dielectric layer is executed on individual single-crystalline ZnO nanowires using either a focused electron beam (FEB) or a focused ion beam (FIB). We fabricate a top-gate FET structure, in which the gate electrode wraps around the ZnO nanowire, resulting in a more efficient gate response than the conventional back-gate nanowire transistors. For E-mode device operation, the gate electrode (platinum) is deposited directly onto the ZnO nanowire by a FEB, which creates a Schottky barrier and in turn a fully depleted channel. Conversely, sandwiching an insulating layer between the FIB-deposited gate electrode and the nanowire channel makes D-mode operation possible. Integrated E- and D-mode FETs on a single nanowire exhibit the characteristics of a direct-coupled FET logic (DCFL) inverter with a high gain and noise margin.
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Zhong, Yi; Xu, Cai-Ling; Kong, Ling-Bin; Li, Hu-Lin
2008-12-01
A novel conjunct template method for fabricating mesoporous Pt nanowire array through direct current (DC) electrodeposition of Pt into the pores of anodic aluminum oxide (AAO) template on Ti/Si substrate from hexagonal structured lyotropic liquid crystalline phase is demonstrated in this paper. The morphology and structure of as-prepared Pt nanowire array are characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The electrocatalytic properties of Pt nanowire array for methanol are also investigated in detail. The results indicate that Pt nanowire array has the unique mesoporous structure of approximate 40-50 nm in diameter, which resulted in the high surface area and greatly improved electrocatalytic activity for methanol. The mesoporous Pt nanowire array synthesized by the new conjunct template method has a very promising application in portable fuel cell power sources.
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Parthangal, Prahalad M.; Cavicchi, Richard E.; Zachariah, Michael R.
2006-08-01
We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 °C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed.
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International Nuclear Information System (INIS)
Parthangal, Prahalad M; Cavicchi, Richard E; Zachariah, Michael R
2006-01-01
We report on a novel, in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles. The utility of the approach is demonstrated by development of a gas sensing device employing this nano-architecture. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550 deg. C on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed
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Generic technique to grow III-V semiconductor nanowires in a closed glass vessel
Directory of Open Access Journals (Sweden)
Kan Li
2016-06-01
Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.
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Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.
Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu
2013-02-01
Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.
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Silver nanowires as catalytic cathodes for stabilizing lithium-oxygen batteries
Kwak, Won-Jin; Jung, Hun-Gi; Lee, Seon-Hwa; Park, Jin-Bum; Aurbach, Doron; Sun, Yang-Kook
2016-04-01
Silver nanowires have been investigated as a catalytic cathode material for lithium-oxygen batteries. Their high aspect ratio contributes to the formation of a corn-shaped layer structure of the poorly crystalline lithium peroxide (Li2O2) nanoparticles produced by oxygen reduction in poly-ether based electrolyte solutions. The nanowire morphology seems to provide the necessary large contact area and facile electron supply for a very effective oxygen reduction reaction. The unique morphology and structure of the Li2O2 deposits and the catalytic nature of the silver nano-wires promote decomposition of Li2O2 at low potentials (below 3.4 V) upon the oxygen evolution. This situation avoids decomposition of the solution species and oxidation of the electrodes during the anodic (charge) reactions, leading to high electrical efficiently of lithium-oxygen batteries.
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International Nuclear Information System (INIS)
Chen, Shu-Fang; Wei, Hao Han; Liu, Chuan-Pu; Hsu, C Y; Huang, J C A
2010-01-01
The magnetic and magneto-transport properties of Ni nanowire (NW) arrays, fabricated by electrodeposition in anodic-aluminum-oxide (AAO) templates, have been investigated. The AAO pores have diameters ranging from 35 to 75 nm, and the crystallinity of the Ni NW arrays could change from poly-crystalline to single-crystalline with the [111] and [110] orientations based on the electrodeposition potential. Notably, double switching magnetization loops and double-peaked magnetoresistance curves were observed in [110]-oriented NWs. The crystalline orientation of the Ni NW arrays is found to influence the corresponding magnetic and magneto-transport properties significantly. These magnetic behaviors are dominated by the competition between the magneto-crystalline and shape anisotropy.
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The preparation and cathodoluminescence of ZnS nanowires grown by chemical vapor deposition
International Nuclear Information System (INIS)
Huang, Meng-Wen; Cheng, Yin-Wei; Pan, Ko-Ying; Chang, Chen-Chuan; Shieu, F.S.; Shih, Han C.
2012-01-01
Highlights: ► ZnS nanowires have been achieved by thermal evaporation. ► The nanowires were 20–50 nm in diameter and up to tens of nanometers in length. ► Single-crystalline wurtzite and sphalerite ZnS phase are coexist in the nanowires. ► The ZnS nanowires showed almost identical blue luminescence at room temperature. ► ZnS nanowires may be appropriate for use in UV/blue LED phosphor materials. - Abstract: Single crystal ZnS nanowires were successfully synthesized in large quantities on Si (1 0 0) substrates by simple thermal chemical vapor deposition without using any catalyst. The morphology, composition, and crystal structure were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and cathodoluminescence (CL) spectroscopy. SEM observations show that the nanowires have diameters about 20–50 nm and lengths up to several tens of micrometers. XRD and TEM results confirmed that the nanowires exhibited both wurtzite and zinc blende structures with growth directions aligned along [0 0 0 2] and [1 1 1], respectively. The CL spectrum revealed emission bands in the UV and blue regions. The blue emissions at 449 and ∼581 nm were attributed to surface states and impurity-related defects of the nanowires, respectively. The perfect crystal structure of the nanowires indicates their potential applications in nanotechnology and in the fabrication of nanodevices.
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International Nuclear Information System (INIS)
Ongaro, Michael; Gambirasi, Arianna; Favaro, Monica; Ugo, Paolo
2012-01-01
Highlights: ► ZnO branched nanofibres for photoelectrochemical applications. ► Branched nanostructures are obtained by electrochemical deposition of ZnO on gold template nanowires. ► Branched nanowires crystallographic phase determined by electron back scatter diffraction. ► Branched structures display improved performances for the photoelectrochemical oxidation of water. - Abstract: This study presents an electrosynthetic methodology to obtain hierarchically structured ZnO electrodes with improved surface area, by exploiting gold nanowires ensembles (3D-NEEs) as the growing substrate. By this way, semiconductor electrodes organized in the shape of fir-like branches are obtained. Branched nanofibres are characterized by electron microscopy and electron backscatter diffraction (EBSD), the latter technique allowing the determination of the crystalline habit of individual nanostructures. The hierarchical branched nanowires show enhanced performances with respect to water photooxidation in comparison with already known nanostructured materials such as 1D-ZnO nanowires.
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Lithium insertion mechanism in SnS2
International Nuclear Information System (INIS)
Lefebvre-Devos, I.; Olivier-Fourcade, J.; Jumas, J.C.; Lavela, P.
2000-01-01
We study lithium insertion in SnS 2 by means of 119 Sn Moessbauer spectroscopy, x-ray absorption spectroscopy at Sn L I,III , and S K edges, and theoretical electronic structures (calculated in the density-functional theory framework). An insertion mechanism is derived according to the Li amount. It shows the influence of the SnS 2 -layered structure on the Sn reduction, particularly the possibility of an intermediate oxidation state between Sn IV and Sn II , which is not observed during Li insertion in three-dimensional sulfides
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Optoelectronic characterizations of vacuum evaporated Cu 2 SnS 3 ...
African Journals Online (AJOL)
... of non-toxic, cheap earthly abundant, ternary compound of Cu2SnS3 thin film. ... film were investigated by X-Ray Diffraction and Scanning Electron Microscope. ... to determine the electrical properties of the deposited Cu2SnS3 ternary films.
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Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application
Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit
2018-05-01
We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.
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International Nuclear Information System (INIS)
Marin, Chris M.; Wang, Lu; Brewer, Joseph R.; Mei, Wai-Ning; Cheung, Chin Li
2013-01-01
Highlights: ► Developed a rapid synthetic method to generate thin films of α-Sm 2 S 3 nanowires. ► Calculated the electronic structure of α-Sm 2 S 3 by density functional theory. ► Predicted that α-Sm 2 S 3 is an intrinsically degenerate p-type semiconductor. ► Found that the gap in the band states of α-Sm 2 S 3 could be engineered to 1.3 eV via sulfur vacancy. -- Abstract: The lanthanide sulfides have long been a promising class of semiconductors because of their infrared-to-visible range band gaps and excellent thermoelectric properties. However, their applications have been limited due to their time consuming conventional synthetic processes and the lack of sufficient understanding of their electronic properties. To address these shortcomings, here we report a rapid, chemical vapor deposition route which results in thin films of crystalline α-phase samarium sesquisulfide (α-Sm 2 S 3 ) nanowires within a few hours, rather than the typical 4–7 days required in previous synthetic processes. In addition, density functional theory was, for the first time, utilized to calculate the electronic band structure of α-Sm 2 S 3 in order to shed insight into the interpretation of their UV–Vis absorption spectrum. We found that the theoretical direct gap in the band states of α-Sm 2 S 3 is 1.7 eV. Computation results suggest that this gap can be tuned to a solar optimal ∼1.3 eV via systematic sulfur vacancy sites engineered into the crystal structure. Most significantly, the degenerate semiconductor-like behavior long observed in lanthanide sulfide samples have been shown to be present even in the ideal α-Sm 2 S 3 structure, suggesting that the observed heavily p-type behavior is an unusual intrinsic property of the material resulting from the Fermi level being located significantly below the optically active 1.7 eV band edge
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Electrical and Optical Characterization of Nanowire based Semiconductor Devices
Ayvazian, Talin
) re- sults revealed higher crystallinity, larger grain size and presence of Te for nanowires prepared at 55°C compared to nanowires deposited at 20°C. Nanowires prepared at 55°C showed higher electrical conductivity and enhanced electroluminescence proper- ties, including higher light emission intensity and improved External Quantum Efficiency (EQE). Electrical conduction mechanism also investigated for CdTe nanowires. Thermionic emission over schottky barrier height was identified as the dominant charge transport mechanism in pc-CdTe nanowires.°C x 1h enhanced grain growth confirmed by structural characterization including X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Raman Spectroscopy. Correspondingly the light emission intensity and EQE improved due to this grain growth. Kelvin probe force microscopy (KPFM) was utilized to understand mechanism of light emission in CdSe nanowires. Arrays of CdTe nanowires were electrodeposited using LPNE process where the electrodeposition of pc-CdTe was carried out at two temperatures: 20 °C (cold) and 55 °C (hot). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) re- sults revealed higher crystallinity, larger grain size and presence of Te for nanowires prepared at 55°C compared to nanowires deposited at 20°C. Nanowires prepared at 55°C showed higher electrical conductivity and enhanced electroluminescence properties, including higher light emission intensity and improved External Quantum Efficiency (EQE). Electrical conduction mechanism also investigated for CdTe nanowires. Thermionic emission over schottky barrier height was identified as the dominant charge transport mechanism in pc-CdTe nanowires.
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The SNS target station preliminary Title I shielding analyses
International Nuclear Information System (INIS)
Johnson, J.O.; Santoro, R.T.; Lillie, R.A.; Barnes, J.M.; McNeilly, G.S.
2000-01-01
The Department of Energy (DOE) has given the Spallation Neutron Source (SNS) project approval to begin Title I design of the proposed facility to be built at Oak Ridge National Laboratory (ORNL). During the conceptual design phase of the SNS project, the target station bulk-biological shield was characterized and the activation of the major targets station components was calculated. Shielding requirements were assessed with respect to weight, space, and dose-rate constraints for operating, shut-down, and accident conditions utilizing the SNS shield design criteria, DOE Order 5480.25, and requirements specified in 10 CFR 835. Since completion of the conceptual design phase, there have been major design changes to the target station as a result of the initial shielding and activation analyses, modifications brought about due to engineering concerns, and feedback from numerous external review committees. These design changes have impacted the results of the conceptual design analyses, and consequently, have required a re-investigation of the new design. Furthermore, the conceptual design shielding analysis did not address many of the details associated with the engineering design of the target station. In this paper, some of the proposed SNS target station preliminary Title I shielding design analyses will be presented. The SNS facility (with emphasis on the target station), shielding design requirements, calculational strategy, and source terms used in the analyses will be described. Preliminary results and conclusions, along with recommendations for additional analyses, will also be presented. (author)
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Energy Technology Data Exchange (ETDEWEB)
Liang, Yuan-Chang, E-mail: yuanvictory@gmail.com [Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Huang, Chiem-Lum; Hu, Chia-Yen; Deng, Xian-Shi; Zhong, Hua [Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)
2012-10-05
Highlights: Black-Right-Pointing-Pointer Zn{sub 2}SnO{sub 4} nanowires with various morphologies were successfully synthesized by thermal evaporation. Black-Right-Pointing-Pointer The as-synthesized Zn{sub 2}SnO{sub 4} nanowires have a face-centered cubic crystal structure. Black-Right-Pointing-Pointer Thermal annealing of Zn{sub 2}SnO{sub 4} nanowires changes the properties of the visible emission band. - Abstract: This study reports the synthesis of Zn{sub 2}SnO{sub 4} (ZTO) nanowires with various morphologies using thermal evaporation without a metal catalyst. X-ray diffraction patterns show that the structure of the as-synthesized ZTO nanowires is a face-centered cubic spinel phase. Scanning electron microscopy images exhibit that the as-synthesized nanowires have various morphologies, and homogeneously cover the area of interest. High-resolution transmittance electron microscopy reveals that these ZTO nanowires have single crystalline microstructures with four morphologies. The results of low-temperature cathodoluminescence (CL) measurements show the crystal defects of oxygen vacancies and interstitials may contribute to blue-green and yellow-orange emissions, respectively, for the as-synthesized single nanowire. This study also discusses the effects of thermal annealing under oxygen-rich and reducing ambient on the CL properties of the single ZTO nanowire.
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International Nuclear Information System (INIS)
Yoon, Hargsoon; Deshpande, Devesh C; Ramachandran, Vasuda; Varadan, Vijay K
2008-01-01
This research presents a fabrication method of vertically aligned nanowires on substrates using lithography-assisted template bonding (LATB) towards developing highly efficient electrodes for biomedical applications at low cost. A polycarbonate template containing cylindrical nanopores is attached to a substrate and the nanopores are selectively opened with a modified lithography process. Vertically aligned nanowires are grown by electrochemical deposition through these open pores on polyimide film and silicon substrates. The process of opening the nanopores is optimized to yield uniform growth of nanowires. The morphological, crystalline, and electrochemical properties of the resulting vertically aligned nanowires are discussed using scanning electron microscopy (SEM), x-ray diffraction (XRD), and electrochemical analysis tools. The potential application of this simple and inexpensive fabrication technology is discussed in the development of neural probe electrodes
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Simulations of signal amplification and oscillations using a SNS junction
International Nuclear Information System (INIS)
Luiz, A.M.; Soares, V.; Nicolsky, R.
1998-01-01
A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)
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Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells
Directory of Open Access Journals (Sweden)
Zhang Xiao-Zhou
2012-01-01
Full Text Available Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy-1,4-phenylenevinylene (MEH-PPV as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single layer of the polymer, and these materials were used to design a heterojunction solar cell. This solar cell displayed improved performance compared with the devices that were made from only the MEH-PPV polymer. This observed improvement is correlated with the improved electron transport that is perpendicular to the plane of the film. A solar power conversion efficiency of 1.37% was achieved under an AM1.5 illumination.
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Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films
Energy Technology Data Exchange (ETDEWEB)
Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)
2015-06-01
SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.
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Status of the SNS Linac An Overview
Holtkamp, N
2004-01-01
The Spallation Neutron Source SNS is a second generation pulsed neutron source and under construction at Oak Ridge National Laboratory. The SNS is funded by the U.S. Department of Energy?s Office of Basic energy Sciences and is dedicated to the study of the structure and dynamics of materials by neutron scattering. A collaboration composed of six national laboratories (ANL, BNL, TJNAF, LANL, LBNL, ORNL) is responsible for the design and construction of the various subsystems. With the official start in October 1998, the operation of the facility will begin in 2006 and deliver a 1.0 GeV, 1.4 MW proton beam with a pulse length of approximately 700 nanoseconds on a liquid mercury target. The multi-lab collaboration allowed access to a large variety of expertise in order to enhance the delivered beam power by almost an order of magnitude compared to existing neutron facilities. The SNS linac consists of a combination of room temperature and superconducting structures and will be the first pulsed high power sc lin...
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Attosecond-controlled photoemission from metal nanowire tips in the few-electron regime
Ahn, B.; Schö tz, J.; Kang, M.; Okell, W. A.; Mitra, S.; Fö rg, B.; Zherebtsov, S.; Sü ß mann, F.; Burger, C.; Kü bel, M.; Liu, C.; Wirth, A.; Di Fabrizio, Enzo M.; Yanagisawa, H.; Kim, D.; Kim, B.; Kling, M. F.
2017-01-01
sources for microscopy. Here, we report the generation of high energy photoelectrons (up to 160 eV) in photoemission from single-crystalline nanowire tips in few-cycle, 750-nm laser fields at peak intensities of (2-7.3) × 1012 W/cm2. Recording the carrier
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ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films
International Nuclear Information System (INIS)
Ohgai, T; Ikeda, T; Ohta, J
2013-01-01
ZnTe amorphous semiconductor nanowires array was electrodeposited into the nanochannels of ion-track etched polycarbonate membrane thin films from acidic aqueous solution at 313 K. ZnTe electrodeposits with Zn-rich composition was obtained over the wide range of cathode potential from −0.8 V to −1.1 V and the growth rate of ZnTe amorphous nanowires was around 3 nm.sec −1 at the cathode potential of −0.8 V. Cylindrical shape of the nanowires was precisely transferred from the nanochannels and the aspect ratio reached up to ca. 40. ZnTe amorphous phase electrodeposited at 313 K was crystallized by annealing at 683 K and the band gap energy of ZnTe crystalline phase reached up to ca. 2.13 eV.
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Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers
Directory of Open Access Journals (Sweden)
Jang Bo Shim
2011-01-01
Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.
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Xing, Jun; Liu, Xin Feng; Zhang, Qing; Ha, Son Tung; Yuan, Yan Wen; Shen, Chao; Sum, Tze Chien; Xiong, Qihua
2015-07-08
Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.
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ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates
Directory of Open Access Journals (Sweden)
Taylor Curtis
2010-01-01
Full Text Available Abstract Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.
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Grounding of SNS Accelerator Structure
Holik, Paul S
2005-01-01
Description of site general grounding network. RF grounding network enhancement underneath the klystron gallery building. Grounding network of the Ring Systems with ground breaks in the Ring Tunnel. Grounding and Bonding of R&D accelerator equipment. SNS Building lightning protection.
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Huang, Xiaoguang; Woo, Heechul; Wu, Peinian; Hong, Hyo Jin; Jung, Wan Gil; Kim, Bong-Joong; Vanel, Jean-Charles; Choi, Jin Woo
2017-11-28
A simple, low cost, non-toxic and eco-friendly pathway for synthesizing efficient sunlight-driven tin sulfide photocatalyst was studied. SnS nanocrystals were prepared by using mechanical method. The bulk SnS was obtained by evaporation of SnS nanocrystal solution. The synthesized samples were characterized by using XRD, SEM, TEM, UV-vis, and Raman analyses. Well crystallized SnS nanocrystals were verified and the electrochemical characterization was also performed under visible light irradiation. The SnS nanocrystals have shown remarkable photocurrent density of 7.6 mA cm -2 under 100 mW cm -2 which is about 10 times larger than that of the bulk SnS under notably stable operation conditions. Furthermore, the SnS nanocrystals presented higher stability than the bulk form. The IPCE(Incident photon to current conversion efficiency) of 9.3% at 420 nm was obtained for SnS nanocrystal photoanode which is strikingly higher than that of bulk SnS, 0.78%. This work suggests that the enhancement of reacting area by using SnS nanocrystal absorbers could give rise to the improvement of photoelectrochemical cell efficiency.
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SNS Diagnostics Timing Integration
Long, Cary D; Murphy, Darryl J; Pogge, James; Purcell, John D; Sundaram, Madhan
2005-01-01
The Spallation Neutron Source (SNS) accelerator systems will deliver a 1.0 GeV, 1.4 MW proton beam to a liquid mercury target for neutron scattering research. The accelerator complex consists of a 1 GeV linear accelerator, an accumulator ring and associated transport lines. The SNS diagnostics platform is PC-based running Windows XP Embedded for its OS and LabVIEW as its programming language. Coordinating timing among the various diagnostics instruments with the generation of the beam pulse is a challenging task that we have chosen to divide into three phases. First, timing was derived from VME based systems. In the second phase, described in this paper, timing pulses are generated by an in house designed PCI timing card installed in ten diagnostics PCs. Using fan-out modules, enough triggers were generated for all instruments. This paper describes how the Timing NAD (Network Attached Device) was rapidly developed using our NAD template, LabVIEW's PCI driver wizard, and LabVIEW Channel Access library. The NAD...
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Preparation and characterization of Cu2SnS3 thin films by electrodeposition
Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit
2018-05-01
Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.
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Reliability model of SNS linac (spallation neutron source-ORNL)
International Nuclear Information System (INIS)
Pitigoi, A.; Fernandez, P.
2015-01-01
A reliability model of SNS LINAC (Spallation Neutron Source at Oak Ridge National Laboratory) has been developed using risk spectrum reliability analysis software and the analysis of the accelerator system's reliability has been performed. The analysis results have been evaluated by comparing them with the SNS operational data. This paper presents the main results and conclusions focusing on the definition of design weaknesses and provides recommendations to improve reliability of the MYRRHA ( linear accelerator. The reliability results show that the most affected SNS LINAC parts/systems are: 1) SCL (superconducting linac), front-end systems: IS, LEBT (low-energy beam transport line), MEBT (medium-energy beam transport line), diagnostics and controls; 2) RF systems (especially the SCL RF system); 3) power supplies and PS controllers. These results are in line with the records in the SNS logbook. The reliability issue that needs to be enforced in the linac design is the redundancy of the systems, subsystems and components most affected by failures. For compensation purposes, there is a need for intelligent fail-over redundancy implementation in controllers. Enough diagnostics has to be implemented to allow reliable functioning of the redundant solutions and to ensure the compensation function
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Overview of Privacy in Social Networking Sites (SNS)
Powale, Pallavi I.; Bhutkar, Ganesh D.
2013-07-01
Social Networking Sites (SNS) have become an integral part of communication and life style of people in today's world. Because of the wide range of services offered by SNSs mostly for free of cost, these sites are attracting the attention of all possible Internet users. Most importantly, users from all age groups have become members of SNSs. Since many of the users are not aware of the data thefts associated with information sharing, they freely share their personal information with SNSs. Therefore, SNSs may be used for investigating users' character and social habits by familiar or even unknown persons and agencies. Such commercial and social scenario, has led to number of privacy and security threats. Though, all major issues in SNSs need to be addressed, by SNS providers, privacy of SNS users is the most crucial. And therefore, in this paper, we have focused our discussion on "privacy in SNSs". We have discussed different ways of Personally Identifiable Information (PII) leakages from SNSs, information revelation to third-party domains without user consent and privacy related threats associated with such information sharing. We expect that this comprehensive overview on privacy in SNSs will definitely help in raising user awareness about sharing data and managing their privacy with SNSs. It will also help SNS providers to rethink about their privacy policies.
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Córdoba, Rosa; Ibarra, Alfonso; Mailly, Dominique; De Teresa, José Ma
2018-02-14
Novel physical properties appear when the size of a superconductor is reduced to the nanoscale, in the range of its superconducting coherence length (ξ 0 ). Such nanosuperconductors are being investigated for potential applications in nanoelectronics and quantum computing. The design of three-dimensional nanosuperconductors allows one to conceive novel schemes for such applications. Here, we report for the first time the use of a He + focused-ion-beam-microscope in combination with the W(CO) 6 precursor to grow three-dimensional superconducting hollow nanowires as small as 32 nm in diameter and with an aspect ratio (length/diameter) of as much as 200. Such extreme resolution is achieved by using a small He + beam spot of 1 nm for the growth of the nanowires. As shown by transmission electron microscopy, they display grains of large size fitting with face-centered cubic WC 1-x phase. The nanowires, which are grown vertically to the substrate, are felled on the substrate by means of a nanomanipulator for their electrical characterization. They become superconducting at 6.4 K and show large critical magnetic field and critical current density resulting from their quasi-one-dimensional superconducting character. These results pave the way for future nanoelectronic devices based on three-dimensional nanosuperconductors.
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Damping the e-p instability in the SNS accumulator ring
Evans, N. J.; Deibele, C.; Aleksandrov, A.; Xie, Z.
2018-03-01
A broadband, digital damper system for both transverse planes developed for the SNS accumulator ring has recently damped the first indications of the broadband 50-150 MHz e-p instability in a 1.2 MW neutron production beam. This paper presents details of the design and operation of the SNS damper system as well as results of active damping of the e-p instability in the SNS ring showing a reduction in power of betatron oscillation over the 10-300 MHz band of up to 70%. The spectral content of the beam during operation, with and without the damper system is presented and performance of the damper system is evaluated.
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Growth and characterisation of group-III nitride-based nanowires for devices
Energy Technology Data Exchange (ETDEWEB)
Meijers, R J
2007-08-30
One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking
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Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.
Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin
2017-04-20
Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.
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Control growth of silicon nanocolumns' epitaxy on silicon nanowires
Energy Technology Data Exchange (ETDEWEB)
Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)
2013-04-15
The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.
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An atomistic study of the deformation behavior of tungsten nanowires
Energy Technology Data Exchange (ETDEWEB)
Xu, Shuozhi [University of California, California NanoSystems Institute, Santa Barbara, CA (United States); Su, Yanqing [University of California, Department of Mechanical Engineering, Santa Barbara, CA (United States); Chen, Dengke [Georgia Institute of Technology, GWW School of Mechanical Engineering, Atlanta, GA (United States); Li, Longlei [Georgia Institute of Technology, School of Earth and Atmospheric Sciences, Atlanta, GA (United States)
2017-12-15
Large-scale atomistic simulations are performed to study tensile and compressive left angle 112 right angle loading of single-crystalline nanowires in body-centered cubic tungsten (W). Effects of loading mode, wire cross-sectional shape, wire size, strain rate, and crystallographic orientations of the lateral surfaces are explored. Uniaxial deformation of a W bulk single crystal is also investigated for reference. Our results reveal a strong tension-compression asymmetry in both the stress-strain response and the deformation behavior due to different yielding/failure modes: while the nanowires fail by brittle fracture under tensile loading, they yield by nucleation of dislocations from the wire surface under compressive loading. It is found that (1) nanowires have a higher strength than the bulk single crystal; (2) with a cross-sectional size larger than 10 nm, there exists a weak dependence of strength on wire size; (3) when the wire size is equal to or smaller than 10 nm, nanowires buckle under compressive loading; (4) the cross-sectional shape, strain rate, and crystallographic orientations of the lateral surfaces affect the strength and the site of defect initiation but not the overall deformation behavior. (orig.)
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International Nuclear Information System (INIS)
Kafashan, Hosein; Azizieh, Mahdi; Balak, Zohre
2017-01-01
Highlights: • Nanostructured SnS_1_-_xSe_x thin films were prepared by using electrodeposition method. • The XRD patterns obviously showed that the synthesized films were polycrystalline. • The PL spectra of SnS_1_-_xSe_x thin films showed four emission peaks. • The UV–vis spectra shows a variation in the optical band gap energy of SnS_1_-_xSe_x thin films from 1.22 to 1.65 eV. • SnS_1_-_xSe_x thin films would be suitable for use as absorber layers. - Abstract: SnS_1_-_xSe_x nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 °C, −1 V, and 30 min, respectively. SnS_1_-_xSe_x nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV–vis spectroscopy. The XRD patterns revealed that the SnS_1_-_xSe_x nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS_1_-_xSe_x nanostructures due to Se-doping. PL and UV–vis spectroscopy were used to evaluate the optical properties of SnS_1_-_xSe_x thin films. The PL spectra of SnS_1_-_xSe_x nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV–vis spectra showed that the optical band gap energy (E_g) of SnS_1_-_xSe_x nanostructures varied between 1.22–1.65 eV, due to Se-doping.
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Vertically aligned ZnO nanowire arrays in Rose Bengal-based dye-sensitized solar cells
Energy Technology Data Exchange (ETDEWEB)
Pradhan, Basudev; Batabyal, Sudip K.; Pal, Amlan J. [Indian Association for the Cultivation of Science, Department of Solid State Physics, Kolkata 700032 (India)
2007-05-23
We fabricate dye-sensitized solar cells (DSSC) using vertically oriented, high density, and crystalline array of ZnO nanowires, which can be a suitable alternative to titanium dioxide nanoparticle films. The vertical nanowires provide fast routes or channels for electron transport to the substrate electrode. As an alternative to conventional ruthenium complex, we introduce Rose Bengal dye, which acts as a photosensitizer in the dye-sensitized solar cells. The dye energetically matches the ZnO with usual KI-I{sub 2} redox couple for dye-sensitized solar cell applications. (author)
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RF Processing of the Couplers for the SNS Superconducting Cavities
International Nuclear Information System (INIS)
Y.Kang; I.E. Campisi; D. Stout; A. Vassioutchenko; M. Stirbet; M. Drury; T. Powers
2005-01-01
All eighty-one fundamental power couplers for the 805 MHz superconducting cavities of the SNS linac have been RF conditioned and installed in the cryomodules successfully. The couplers were RF processed at JLAB or at the SNS in ORNL: more than forty couplers have been RF conditioned in the SNS RF Test Facility (RFTF) after the first forty couplers were conditioned at JLAB. The couplers were conditioned up to 650 kW forward power at 8% duty cycle in traveling and standing waves. They were installed on the cavities in the cryomodules and then assembled with the airside waveguide transitions. The couplers have been high power RF tested with satisfactory accelerating field gradients in the cooled cavities
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PLD synthesis of GaN nanowires and nanodots on patterned catalyst surface for field emission study
Energy Technology Data Exchange (ETDEWEB)
Ng, D.K.T.; Hong, M.H. [National University of Singapore (Singapore). Department of Electrical and Computer Engineering; Data Storage Institute, Singapore (Singapore); Tan, L.S. [National University of Singapore (Singapore). Department of Electrical and Computer Engineering; Zhu, Y.W.; Sow, C.H. [National University of Singapore (Singapore). Nanoscience and Nanotechnology Initiative; National University of Singapore (Singapore). Department of Physics
2008-11-15
Patterned gallium nitride nanowires and nanodots have been grown on n-Si(100) substrates by pulsed laser deposition. The nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field emission (FE) characteristics of the patterned gallium nitride nanowires show a turn-on field of 9.06 V/{mu}m to achieve a current density of 0.01 mA/cm{sup 2} and an enhanced field emission current density as high as 0.156 mA/cm{sup 2} at an applied field of 11 V/{mu}m. Comparing the peak FE current densities of both the nanowires and nanodots, the peak FE current density of nanowires is around 700 times higher than that of the peak FE current density of nanodots since nanodots have a lower aspect ratio compared to nanowires. The field emission results indicate that, besides density difference, crystalline quality as well as the low electron affinity of gallium nitride, high aspect ratio of gallium nitride nanostructures will greatly enhance their field emission properties. (orig.)
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Magnetoelectrolysis of Co nanowire arrays grown in a tracketched polycarbonate membrane
Energy Technology Data Exchange (ETDEWEB)
Radu, Florin [BESSY GmbH, Berlin (Germany); Rivero, Guillermo; Marin, Pilar; Hernando, Antonio [Instituto de Magnetismo Aplicado, Madrid (Spain); Sanchez-Barriga, J. [Instituto de Magnetismo Aplicado, Madrid (Spain); BESSY GmbH, Berlin (Germany); Lucas, M. [Inst. fuer Theoretische Physik, Technische Univ. Berlin (Germany)
2007-07-01
Arrays of Cobalt nanowires with a controlled length of 6{mu}m have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30 nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50 Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-Ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition.
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Gate-tunable transport characteristics of Bi2S3 nanowire transistors
Kilcoyne, Colin; Ali, Ahmed H.; Alsaqqa, Ali M.; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, Ganapathy
2018-02-01
Electrical transport and resistance noise spectroscopy measurements are performed on individual, single crystalline Bi2S3 nanowires in the field-effect geometry. The nanowires exhibit n-type conduction and device characteristics such as activation energy, ON/OFF ratio, and mobility are calculated over a temperature range of 120-320 K and at several bias values. The noise magnitude is measured between 0.01 and 5 Hz at several gate voltages as the device turns from it's OFF to ON state. The presence of mid-gap states which act as charge traps within the band gap can potentially explain the observed transport characteristics. Sulfur vacancies are the likely origin of these mid-gap states which makes Bi2S3 nanowires appealing for defect engineering as a means to enhance its optoelectronic properties and also to better understand the important role of defects in nanoscale semiconductors.
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Nucleation and growth mechanism of Co–Pt alloy nanowires electrodeposited within alumina template
Energy Technology Data Exchange (ETDEWEB)
Srivastav, Ajeet K., E-mail: srivastav.ajeet.kumar@gmail.com, E-mail: mm09d004@smail.iitm.ac.in [Indian Institute of Technology Madras, Department of Metallurgical and Materials Engineering (India); Shekhar, Rajiv [Indian Institute of Technology Kanpur, Department of Materials Science and Engineering (India)
2015-01-15
Co–Pt alloy nanowires were electrodeposited by direct current electrodeposition within nanoporous alumina templates with varying deposition potentials. The effect of deposition potential on nucleation and growth mechanisms during electrodeposition of Co–Pt alloy nanowires was investigated. The less negative deposition potential (−0.9 V) favours the instantaneous nucleation mechanism. The positive deviation from theoretical instantaneous and progressive nucleation mechanisms occurs at higher negative deposition potentials. The hysteresis behaviour and magnetic properties of electrodeposited Co–Pt alloy nanowires altered with varying deposition potential. The easy magnetization direction was in direction perpendicular to the wire axis. The deposition potential dependent change in hysteresis behaviour with increased coercivity and scattered remanence ratio was observed. This is attributed to better crystallinity with reduced defect density and hydrogen evolution causing structural changes at more negative deposition potentials.
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Electroless synthesis of 3 nm wide alloy nanowires inside Tobacco mosaic virus
International Nuclear Information System (INIS)
Balci, Sinan; Kern, Klaus; Bittner, Alexander M; Hahn, Kersten; Kopold, Peter; Kadri, Anan; Wege, Christina
2012-01-01
We show that 3 nm wide cobalt–iron alloy nanowires can be synthesized by simple wet chemical electroless deposition inside tubular Tobacco mosaic virus particles. The method is based on adsorption of Pd(II) ions, formation of a Pd catalyst, and autocatalytic deposition of the alloy from dissolved metal salts, reduced by a borane compound. Extensive energy-filtering TEM investigations at the nanoscale revealed that the synthesized wires are alloys of Co, Fe, and Ni. We confirmed by high-resolution TEM that our alloy nanowires are at least partially crystalline, which is compatible with typical Co-rich alloys. Ni traces bestow higher stability, presumably against corrosion, as also known from bulk CoFe. Alloy nanowires, as small as the ones presented here, might be used for a variety of applications including high density data storage, imaging, sensing, and even drug delivery. (paper)
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Physical properties of very thin SnS films deposited by thermal evaporation
International Nuclear Information System (INIS)
Cheng Shuying; Conibeer, Gavin
2011-01-01
SnS films with thicknesses of 20–65 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and ultraviolet–visible-near infrared spectroscopy at room temperature. The results from XRD, XPS and Raman spectroscopy analyses indicate that the deposited films mainly exhibit SnS phase, but they may contain a tiny amount of Sn 2 S 3 . The deposited SnS films are pinhole free, smooth and strongly adherent to the surfaces of the substrates. The color of the SnS films changes from pale yellow to brown with the increase of the film thickness from 20 nm to 65 nm. The very smooth surfaces of the thin films result in their high reflectance. The direct bandgap of the films is between 2.15 eV and 2.28 eV which is much larger than 1.3 eV of bulk SnS, this is deserving to be investigated further.
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Growth of highly textured SnS on mica using an SnSe buffer layer
International Nuclear Information System (INIS)
Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.
2014-01-01
We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer
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Energy Technology Data Exchange (ETDEWEB)
Huang, Po-Chia [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan, ROC (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, ROC (China); Wang, Sheng-Chang; Shaikh, Muhammad Omar [Department of Mechanical Engineering, Southern Taiwan University of Science and Technology, Tainan 710, Taiwan, ROC (China); Lin, Chia-Yu [Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)
2015-12-01
SnS of orthorhombic (OR) and metastable (SnS) phases were synthesized by using a simple and facile colloidal method. The tin precursor was synthesized using tin oxide (SnO) and oleic acid (OA), while the sulfur precursor was prepared using sulfur powder (S) and oleyamine (OLA). The sulfur precursor was injected into the tin precursor and the prepared SnS nanocrystals were precipitated at a final reaction temperature of 180 °C. The results show that hexamethyldisilazane (HMDS) can be successfully used as a surfactant to synthesize monodisperse 20 nm metastable SnS nanoparticles, while OR phase SnS nanosheets were obtained without HMDS. The direct bandgap observed for the metastable SnS phase is higher (1.66 eV) as compared to the OR phase (1.46 eV). The large blueshift in the direct bandgap of metastable SnS is caused by the difference in crystal structure. The blueshift in the direct band gap value for OR-SnS could be explained by quantum confinement in two dimensions in the very thin nanosheets. SnS thin films used as a photo anode in a photoelectrochemical (PEC) cell were prepared by spin coating on the fluorine-doped tin oxide (FTO) substrates. The photocurrent density of the SnS (metastable SnS)/FTO and SnS (OR)/FTO are 191.8 μA/cm{sup 2} and 57.61 μA/cm{sup 2} at an applied voltage of − 1 V at 150 W, respectively. These narrow band gap and low cost nanocrystals can be used for applications in future optoelectronic devices. - Highlights: • A facile method to synthesize two different phases of SnS having different morphological and optical properties. • The phases and morphologies of SnS nanocrystal can be controlled by adding capping surfactant hexamethyldisilazane (HMDS). • As we know, this is the first metastable SnS photoanode for application in a photoelectrochemical cell.
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Directory of Open Access Journals (Sweden)
Eduardo Ortega
2018-05-01
Full Text Available Magnetic nanostructures of different size, shape, and composition possess a great potential to improve current technologies like data storage and electromagnetic sensing. In thin ferromagnetic nanowires, their magnetization behavior is dominated by the competition between magnetocrystalline anisotropy (related to the crystalline structure and shape anisotropy. In this way electron diffraction methods like precession electron diffraction (PED can be used to link the magnetic behavior observed by Electron Holography (EH with its crystallinity. Using off-axis electron holography under Lorentz conditions, we can experimentally determine the magnetization distribution over neighboring nanostructures and their diamagnetic matrix. In the case of a single row of nickel nanowires within the alumina template, the thin TEM samples showed a dominant antiferromagnetic arrangement demonstrating long-range magnetostatic interactions playing a major role.
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Polyol-mediated thermolysis process for the synthesis of MgO nanoparticles and nanowires
Energy Technology Data Exchange (ETDEWEB)
Subramania, A; Kumar, G Vijaya; Priya, A R Sathiya; Vasudevan, T [Advanced Materials Research Lab, Department of Industrial Chemistry, Alagappa University, Karaikudi-630 003 (India)
2007-06-06
The main aim of this work is to prepare MgO nanoparticles and nanowires by a novel polyol-mediated thermolysis (PMT) process. The influence of different mole concentration of magnesium acetate, polyvinyl pyrrolidone (PVP; capping agent) and ethylene glycol (EG; solvent as well as reducing agent) on the formation of nanoparticles and nanowires and the effect of calcination on the crystalline size of the samples were also examined. The resultant oxide structure, thermal behaviour, size and shape have been studied using x-ray diffraction (XRD) studies, thermal (TG/DTA) analysis and scanning electron microscopy (SEM)/transmission electron microscopy (TEM) respectively.
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Polyol-mediated thermolysis process for the synthesis of MgO nanoparticles and nanowires
Subramania, A.; Vijaya Kumar, G.; Sathiya Priya, A. R.; Vasudevan, T.
2007-06-01
The main aim of this work is to prepare MgO nanoparticles and nanowires by a novel polyol-mediated thermolysis (PMT) process. The influence of different mole concentration of magnesium acetate, polyvinyl pyrrolidone (PVP; capping agent) and ethylene glycol (EG; solvent as well as reducing agent) on the formation of nanoparticles and nanowires and the effect of calcination on the crystalline size of the samples were also examined. The resultant oxide structure, thermal behaviour, size and shape have been studied using x-ray diffraction (XRD) studies, thermal (TG/DTA) analysis and scanning electron microscopy (SEM)/transmission electron microscopy (TEM) respectively.
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Polyol-mediated thermolysis process for the synthesis of MgO nanoparticles and nanowires
International Nuclear Information System (INIS)
Subramania, A; Kumar, G Vijaya; Priya, A R Sathiya; Vasudevan, T
2007-01-01
The main aim of this work is to prepare MgO nanoparticles and nanowires by a novel polyol-mediated thermolysis (PMT) process. The influence of different mole concentration of magnesium acetate, polyvinyl pyrrolidone (PVP; capping agent) and ethylene glycol (EG; solvent as well as reducing agent) on the formation of nanoparticles and nanowires and the effect of calcination on the crystalline size of the samples were also examined. The resultant oxide structure, thermal behaviour, size and shape have been studied using x-ray diffraction (XRD) studies, thermal (TG/DTA) analysis and scanning electron microscopy (SEM)/transmission electron microscopy (TEM) respectively
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First neutron results from SNS
International Nuclear Information System (INIS)
Leadbetter, A.J.; Abbley, D.; Bailey, I.F.
1985-05-01
The report summarises the analyses of the first neutron results on the pulsed spallation source SNS. The source parameters; aspects of the instrumentation; and experimental results particular to a given beamline; are all discussed. General conclusions based on these data, the detectors and the computing system, are also examined. (U.K.)
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Energy Technology Data Exchange (ETDEWEB)
Zhou, Hai [State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Lv, Baoliang, E-mail: lbl604@sxicc.ac.cn [State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001 (China); Wu, Dong; Xu, Yao [State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001 (China)
2014-12-15
Graphical abstract: Co{sub 3}O{sub 4} nanowires with excellent ammonium perchlorate catalytic decomposition property were synthesized via a methanamide-assisted hydrolysis and subsequent dissolution–recrystallization process in the presence of methanamide. - Abstract: Co{sub 3}O{sub 4} nanowires, with the length of tens of micrometers and the width of several hundred nanometers, were produced by a hydrothermal treatment and a post-anneal process. X-ray diffraction (XRD) result showed that the Co{sub 3}O{sub 4} nanowires belong to cubic crystal system. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) analysis indicated that the Co{sub 3}O{sub 4} nanowires, composed by single crystalline nanoparticles, were of polycrystalline nature. On the basis of time-dependent experiments, methanamide-assisted hydrolysis and subsequent dissolution–recrystallization process were used to explain the precursors' formation process of the polycrystalline Co{sub 3}O{sub 4} nanowires. The TGA experiments showed that the as-obtained Co{sub 3}O{sub 4} nanowires can catalyze the thermal decomposition of ammonium perchlorate (AP) effectively.
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Carbon-doped SnS2 nanostructure as a high-efficiency solar fuel catalyst under visible light.
Shown, Indrajit; Samireddi, Satyanarayana; Chang, Yu-Chung; Putikam, Raghunath; Chang, Po-Han; Sabbah, Amr; Fu, Fang-Yu; Chen, Wei-Fu; Wu, Chih-I; Yu, Tsyr-Yan; Chung, Po-Wen; Lin, M C; Chen, Li-Chyong; Chen, Kuei-Hsien
2018-01-12
Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an L-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS 2 (SnS 2 -C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO 2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS 2 lattice, resulting in different photophysical properties as compared with undoped SnS 2 . This SnS 2 -C photocatalyst significantly enhances the CO 2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS 2 -C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO 2 reduction under visible light, where the in situ carbon-doped SnS 2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.
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Cui, Li-Feng; Ruffo, Riccardo; Chan, Candace K.; Peng, Hailin; Cui, Yi
2009-01-01
fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower
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Progress on the SNS target station
International Nuclear Information System (INIS)
Carne, A.
1983-01-01
This review gives progress and modifications covering the last eighteen months, under the five broad areas of target, target assembly, control system, bulk shield and remote handling. Finally a discussion of additional facilities to the SNS is presented
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Direct observation of shear piezoelectricity in poly-l-lactic acid nanowires
Directory of Open Access Journals (Sweden)
Michael Smith
2017-07-01
Full Text Available Piezoelectric polymers are capable of interconverting mechanical and electrical energy, and are therefore candidate materials for biomedical applications such as sensors, actuators, and energy harvesters. In particular, nanowires of these materials are attractive as they can be unclamped, flexible and sensitive to small vibrations. Poly-l-lactic acid (PLLA nanowires have been investigated for their use in biological applications, but their piezoelectric properties have never been fully characterised, even though macroscopic films and fibres have been shown to exhibit shear piezoelectricity. This piezoelectric mode is particularly interesting for in vivo applications where shear forces are especially relevant, and is similar to what has been observed in natural materials such as bone and DNA. Here, using piezo-response force microscopy (PFM, we report the first direct observation of shear piezoelectricity in highly crystalline and oriented PLLA nanowires grown by a novel template-wetting method. Our results are validated using finite-element simulations and numerical analysis, which importantly and more generally allow for accurate interpretation of PFM signals in soft nanostructured materials. Our work opens up the possibility for the development of biocompatible and sustainable piezoelectric nanogenerators and sensors based on polymer nanowires.
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Direct observation of shear piezoelectricity in poly-l-lactic acid nanowires
Smith, Michael; Calahorra, Yonatan; Jing, Qingshen; Kar-Narayan, Sohini
2017-07-01
Piezoelectric polymers are capable of interconverting mechanical and electrical energy, and are therefore candidate materials for biomedical applications such as sensors, actuators, and energy harvesters. In particular, nanowires of these materials are attractive as they can be unclamped, flexible and sensitive to small vibrations. Poly-l-lactic acid (PLLA) nanowires have been investigated for their use in biological applications, but their piezoelectric properties have never been fully characterised, even though macroscopic films and fibres have been shown to exhibit shear piezoelectricity. This piezoelectric mode is particularly interesting for in vivo applications where shear forces are especially relevant, and is similar to what has been observed in natural materials such as bone and DNA. Here, using piezo-response force microscopy (PFM), we report the first direct observation of shear piezoelectricity in highly crystalline and oriented PLLA nanowires grown by a novel template-wetting method. Our results are validated using finite-element simulations and numerical analysis, which importantly and more generally allow for accurate interpretation of PFM signals in soft nanostructured materials. Our work opens up the possibility for the development of biocompatible and sustainable piezoelectric nanogenerators and sensors based on polymer nanowires.
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Kafashan, Hosein; Azizieh, Mahdi; Balak, Zohre
2017-07-01
SnS1-xSex nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 °C, -1 V, and 30 min, respectively. SnS1-xSex nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV-vis spectroscopy. The XRD patterns revealed that the SnS1-xSex nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS1-xSex nanostructures due to Se-doping. PL and UV-vis spectroscopy were used to evaluate the optical properties of SnS1-xSex thin films. The PL spectra of SnS1-xSex nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV-vis spectra showed that the optical band gap energy (Eg) of SnS1-xSex nanostructures varied between 1.22-1.65 eV, due to Se-doping.
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Commissioning of the Superconducting Linac at the Spallation Neutron Source (SNS)
International Nuclear Information System (INIS)
Kim, Sang-Ho; Campisi, Isidoro E.
2007-01-01
The use of superconducting radiofrequency (SRF) cavities in particle accelerator is becoming more widespread. Among the projects that make use of that technology is the Spallation Neutron Source, where H-ions are accelerated to about 1 GeV, mostly making use of niobium elliptical cavities. SNS will use the accelerated short (about 700 ns) sub-bunches of protons to generate neutrons by spallation, which will in turn allow probing structural and magnetic properties of new and existing materials. The SNS superconducting linac is the largest application of RF superconductivity to come on-line in the last decade. The SRF cavities, operated at 805 MHz, were designed, built and integrated into cryomodules at Jefferson Lab and installed and tested at SNS. SNS is also the first proton-like accelerator which uses SRF cavities in a pulse mode. Many of the details of the cavity performance are peculiar to this mode of operation, which is also being applied to lepton accelerators (TESLA test facility and X-FEL at DESY and the international linear collider project). Thanks to the low frequency of the SNS superconducting cavities, operation at 4.2 K has been possible without beam energy degradation, even though the cavities and cryogenic systems were originally designed for 2.1 K operation. The testing of the superconducting cavities, the operating experience with beam and the performance of the superconducting linac will be presented
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Magnetoelectrolysis of Co nanowire arrays grown in a track-etched polycarbonate membrane
Energy Technology Data Exchange (ETDEWEB)
Sanchez-Barriga, J. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain)]. E-mail: sbarriga@bessy.de; Lucas, M. [Technische Universitaet Berlin, Institut fuer Theoretische Physik, Hardenbergstr. 36, D-10623 Berlin (Germany); Rivero, G. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain); Marin, P. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain); Hernando, A. [Instituto de Magnetismo Aplicado (UCM-RENFE-CSIC), P.O. Box 155, 28230, Las Rozas, Madrid (Spain)
2007-05-15
Arrays of Cobalt nanowires with a controlled length of 6{mu}m have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition.
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Magnetoelectrolysis of Co nanowire arrays grown in a track-etched polycarbonate membrane
International Nuclear Information System (INIS)
Sanchez-Barriga, J.; Lucas, M.; Rivero, G.; Marin, P.; Hernando, A.
2007-01-01
Arrays of Cobalt nanowires with a controlled length of 6μm have been fabricated by electrochemical deposition into the pores of track-etched polycarbonate membranes with a nominal pore diameter of 30nm. The magnetic properties of Co-deposited nanowires and the effects of a magnetic field applied during electrodeposition of the arrays have been studied. An enhancement of the mass deposition rate due to the presence of a 50Oe magnetic field along the nanowire axis has been observed by measuring the experimental development of the current in the electrochemical cell during the fabrication process. X-ray diffraction measurements reveal a different polycrystalline degree for each deposition configuration, indicating that the crystalline structure of the deposited material has been substantially modified. Magnetic measurements show a clear dependence of the anisotropy directions on the orientation of the magnetic field applied during the electrodeposition
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Fabrication and optical properties of SnS thin films by SILAR method
International Nuclear Information System (INIS)
Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata
2008-01-01
Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO 4 and Na 2 S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra
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Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition
International Nuclear Information System (INIS)
Gandhi, T.; Raja, K.S.; Misra, M.
2009-01-01
Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO 2 template in a propylene carbonate solution at 130 o C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at - 0.62 V and an anodic pulse at 0.75 V Vs Zn 2+ /Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 x 10 4 Ω cm and a charge carrier density of 1.67 x 10 14 cm -3 . Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.
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Transverse beam stability measurement and analysis for the SNS accumulator ring
Energy Technology Data Exchange (ETDEWEB)
Xie, Zaipeng [University of Wisconsin-Madison, Madison, WI 53706-1691 (United States); Deibele, Craig, E-mail: deibele@ornl.gov [Oak Ridge National Laboratory, PO BOX 2008 MS6483, Oak Ridge, TN 37831-6461 (United States); Schulte, Michael J.; Hu, Yu-Hen [University of Wisconsin-Madison, Madison, WI 53706-1691 (United States)
2015-07-11
A field-programmable gate array (FPGA)-based transverse feedback damper system was implemented in the Spallation Neutron Source (SNS) accumulator ring with the intention to stabilize the electron–proton (e–p) instability in the frequency range of 1–300 MHz. The transverse feedback damper could also be used as a diagnostic tool by measuring the beam transfer function (BTF). An analysis of the BTF measurements provides the stability diagram for the production beam at SNS. This paper describes the feedback damper system and its setup as the BTF diagnostic tool. Experimental BTF results are presented and beam stability is analyzed by use of the BTF measurements for the SNS accumulator ring.
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Transverse beam stability measurement and analysis for the SNS accumulator ring
International Nuclear Information System (INIS)
Xie, Zaipeng; Deibele, Craig; Schulte, Michael J.; Hu, Yu-Hen
2015-01-01
A field-programmable gate array (FPGA)-based transverse feedback damper system was implemented in the Spallation Neutron Source (SNS) accumulator ring with the intention to stabilize the electron–proton (e–p) instability in the frequency range of 1–300 MHz. The transverse feedback damper could also be used as a diagnostic tool by measuring the beam transfer function (BTF). An analysis of the BTF measurements provides the stability diagram for the production beam at SNS. This paper describes the feedback damper system and its setup as the BTF diagnostic tool. Experimental BTF results are presented and beam stability is analyzed by use of the BTF measurements for the SNS accumulator ring
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Progress in design of the SNS linac
International Nuclear Information System (INIS)
Hardekopf, R.
2001-01-01
The Spallation Neutron Source (SNS) is a six-laboratory collaboration to build an intense pulsed neutron facility at Oak Ridge, TN. The linac design has evolved from the conceptual design presented in 1997 in order to achieve higher initial performance and to incorporate desirable upgrade features. The linac is now designed to produce 2-MW beam power using a combination of radio-frequency quadrupole (RFQ) linac, drift-tube linac (DTL), coupled-cavity linac (CCL), and superconducting-RF (SRF) linac. Designs of each of these elements support he high peak intensity and high quality beam required for injection into the SNS accumulator ring. This paper will trace the evolution of the linac design and the progress made in the R and D program. (author)
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Length dependent properties of SNS microbridges
International Nuclear Information System (INIS)
Sauvageau, J.E.; Jain, R.K.; Li, K.; Lukens, J.E.; Ono, R.H.
1985-01-01
Using an in-situ, self-aligned deposition scheme, arrays of variable length SNS junctions in the range of 0.05 μm to 1 μm have been fabricated. Arrays of SNS microbridges of lead-copper and niobium-copper fabricated using this technique have been used to study the length dependence, at constant temperature, of the critical current I and bridge resistance R /SUB d/ . For bridges with lengths pounds greater than the normal metal coherence length xi /SUB n/ (T), the dependence of I /SUB c/ on L is consistent with an exponential dependence on the reduced length l=L/xi /SUB n/ (T). For shorter bridges, deviations from this behavior is seen. It was also found that the bridge resistance R /SUB d/ does not vary linearly with the geometric bridge length but appears to approach a finite value as L→O
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Zhai, Yujia
2012-11-26
We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf
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Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar
2012-01-01
We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf
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High Intensity Effects in the SNS Accumulator Ring
International Nuclear Information System (INIS)
Holmes, Jeffrey A.; Cousineau, Sarah M.; Danilov, Viatcheslav; Plum, Michael A.; Shishlo, Andrei P.
2008-01-01
Currently operating at 0.5 MW beam power on target, the Spallation Neutron Source (SNS) is already the world's most powerful pulsed neutron source. However, we are only one third of the way to full power. As we ramp toward full power, the control of the beam and beam loss in the ring will be critical. In addition to practical considerations, such as choice of operating point, painting scheme, RF bunching, and beam scattering, it may be necessary to understand and mitigate collective effects due to space charge, impedances, and electron clouds. At each stage of the power ramp-up, we use all available resources to understand and to minimize beam losses. From the standpoint of beam dynamics, the losses observed so far under normal operating conditions have not involved collective phenomena. We are now entering the intensity regime in which this may change. In dedicated high intensity beam studies, we have already observed resistive wall, extraction kicker impedance-driven, and electron cloud activities. The analysis and simulation of this data are important ongoing activities at SNS. This paper discusses the status of this work, as well as other considerations necessary to the successful full power operation of SNS.
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Whittles, TJ; Burton, LA; Skelton, JM; Walsh, A; Veal, TD; Dhanak, VR
2016-01-01
Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic properties, and there is difficulty in identifying separate phases, which are also known to form during Cu2ZnSnS4 depositions. We present X-ray photoemission spectroscopy (XPS) and inverse photoemission spectroscopy measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calculations from density functional theory (DFT). Differences in the XPS spectra of the three phases, including...
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High yield polyol synthesis of round- and sharp-end silver nanowires with high aspect ratio
Energy Technology Data Exchange (ETDEWEB)
Nekahi, A.; Marashi, S.P.H., E-mail: pmarashi@aut.ac.ir; Fatmesari, D. Haghshenas
2016-12-01
Long silver nanowires (average length of 28 μm, average aspect ratio of 130) with uniform diameter along their length were produced by polyol synthesis of AgNO{sub 3} in ethylene glycol in the presence of PVP as preferential growth agent. Nanowires were produced with no addition of chloride salts such as NaCl or CuCl{sub 2} (or other additives such as Na{sub 2}S) which are usually used for lowering reduction rate of Ag ions by additional etchant of O{sub 2}/Cl{sup −}. Lower reduction rate was obtained by increasing the injection time of PVP and AgNO{sub 3} solutions, which was the significant factor in the formation of nanowires. Therefore, there was enough time for reduced Ag atoms to be deposited preferentially in the direction of PVP chains, resulting in high yield (the fraction of nanowires in the products) of nanowires (more than 95%) with high aspect ratio. The produced nanowires had both round- and sharp-ends with pentagonal cross section. Higher energy level of Ag atoms in borders of MTPs, which increases the dissolution rate of precipitated atoms, in addition to partial melting of MTPs at high synthesis temperatures, leads to the curving of the surfaces of exposed (111) crystalline planes in some MTPs and the formation of round-end silver nanowires. - Highlights: • Long silver nanowires with high aspect ratio of 130 were produced. • More than 95% nanowires were produced in products. • The produced nanowires had round- and sharp-ends with pentagonal cross section. • Additives were needed neither for high yield synthesis nor for round-end nanowires. • Melting and etching of MTPs in high energy borders resulted to round-end nanowires.
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Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul
2018-06-01
By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.
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Transverse Matching Progress Of The SNS Superconducting Linac
International Nuclear Information System (INIS)
Zhang, Yan; Cousineau, Sarah M.; Liu, Yun
2011-01-01
Experience using laser-wire beam profile measurement to perform transverse beam matching in the SNS superconducting linac is discussed. As the SNS beam power is ramped up to 1 MW, transverse beam matching becomes a concern to control beam loss and residual activation in the linac. In our experiments, however, beam loss is not very sensitive to the matching condition. In addition, we have encountered difficulties in performing a satisfactory transverse matching with the envelope model currently available in the XAL software framework. Offline data analysis from multi-particle tracking simulation shows that the accuracy of the current online model may not be sufficient for modeling the SC linac.
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The Research on Informal Learning Model of College Students Based on SNS and Case Study
Lu, Peng; Cong, Xiao; Bi, Fangyan; Zhou, Dongdai
2017-03-01
With the rapid development of network technology, informal learning based on online become the main way for college students to learn a variety of subject knowledge. The favor to the SNS community of students and the characteristics of SNS itself provide a good opportunity for the informal learning of college students. This research first analyzes the related research of the informal learning and SNS, next, discusses the characteristics of informal learning and theoretical basis. Then, it proposed an informal learning model of college students based on SNS according to the support role of SNS to the informal learning of students. Finally, according to the theoretical model and the principles proposed in this study, using the Elgg and related tools which is the open source SNS program to achieve the informal learning community. This research is trying to overcome issues such as the lack of social realism, interactivity, resource transfer mode in the current network informal learning communities, so as to provide a new way of informal learning for college students.
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Yavuz, Arzu Büyükyağci; Carbas, Buket Bezgın; Sönmezoğlu, Savaş; Soylu, Murat
2016-01-01
A new tetrakis 4-(2,5-di-2-thiophen-2-yl-pyrrol-1-yl)-substituted nickel phthalocyanine (NiPc-SNS) has been synthesized. This synthesized NiPc-SNS thin film was deposited on p-type Si substrate using the spin coating method (SCM) to fabricate a NiPc-SNS/ p-Si heterojunction diode. The temperature-dependent electrical characteristics of the NiPc-SNS/ p-Si heterojunction with good rectifying behavior were investigated by current-voltage ( I- V) measurements between 50 K and 300 K. The results indicate that the ideality factor decreases while the barrier height increases with increasing temperature. The barrier inhomogeneity across the NiPc-SNS/ p-Si heterojunction reveals a Gaussian distribution at low temperatures. These results provide further evidence of the more complicated mechanisms occurring in this heterojunction. Based on these findings, NiPc-SNS/ p-Si junction diodes are feasible for use in low-temperature applications.
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International Nuclear Information System (INIS)
Zafar, N.; Shamaila, S.; Sharif, R.; Wali, H.; Naseem, S.; Riaz, S.; Khaleeq-ur-Rahman, M.
2015-01-01
Anodic aluminum oxide templates with pore diameter of 40 nm and inter pore separation of 100 nm are prepared by two step anodization in 0.3 M oxalic acid solution. These templates are used to fabricate dc-deposited Co nanowires at different pH values of acidic bath. Continuous and densely packed nanowires having length ∼8 µm are observed. The hcp configuration appeared at moderate and high pH whereas both fcc and hcp phases are observed at low pH. However the crystallinity distorted at high pH due to formation of polycrystalline structure of cobalt nanowires. Alignment of easy-axis of nanowires can be tailored by varying pH of solution. - Highlights: • Variation in the structure of dc deposited cobalt nanowires can be obtained by varying pH of acidic bath. • The hcp structure is stable at room temperature with low voltage deposition for electrodeposited Co nanowires. Co with fcc structure, is stable at temperatures above 422 °C or at pH<3 with high potential. • The hcp (100) plane is obtained with pH∼3.5 and (101) is stable at pH∼5.5 due to variation in temperature inside the pores with respect to the pH. • Alignment of easy-axis of nanowires can be tailored by varying pH of solution
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Highly sensitive uric acid biosensor based on individual zinc oxide micro/nanowires
International Nuclear Information System (INIS)
Zhao, Yanguang; Yan, Xiaoqin; Kang, Zhuo; Lin, Pei; Fang, Xiaofei; Lei, Yang; Ma, Siwei; Zhang, Yue
2013-01-01
We describe the use of individual zinc oxide (ZnO) micro/nanowires in an electrochemical biosensor for uric acid. The wires were synthesized by chemical vapor deposition and possess uniform morphology and high crystallinity as revealed by scanning electron microscopy, X-ray diffraction, and photoluminescence studies. The enzyme uricase was then immobilized on the surface of the ZnO micro/nanowires by physical adsorption, and this was proven by Raman spectroscopy and fluorescence microscopy. The resulting uric acid biosensor undergoes fast electron transfer between the active site of the enzyme and the surface of the electrode. It displays high sensitivity (89.74 μA cm −2 mM −1 ) and a wide linear analytical range (between 0.1 mM and 0.59 mM concentrations of uric acid). This study also demonstrates the potential of the use of individual ZnO micro/nanowires for the construction of highly sensitive nano-sized biosensors. (author)
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Broad spectral response photodetector based on individual tin-doped CdS nanowire
Directory of Open Access Journals (Sweden)
Weichang Zhou
2014-12-01
Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.
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International Nuclear Information System (INIS)
Sun, Hongyu; Ahmad, Mashkoor; Luo, Jun; Shi, Yingying; Shen, Wanci; Zhu, Jing
2014-01-01
Graphical abstract: The synthesized SnS 2 nanoflakes decorated multiwalled carbon nanotubes hybrid structures exhibit large reversible capacity, superior cycling performance, and good rate capability as compared to pure SnS 2 nanoflakes. - Highlights: • Synthesis of SnS 2 nanoflakes decorated multiwalled carbon nanotubes hybrid structures. • Simple solution-phase approach. • Morphology feature of SnS 2 . • Enhanced performance as Li-ion batteries. - Abstract: SnS 2 nanoflakes decorated multiwalled carbon nanotubes (MWCNTs) hybrid structures are directly synthesized via a simple solution-phase approach. The as-prepared SnS 2 /MWCNTs structures are investigated as anode materials for Li-ion batteries as compared with SnS 2 nanoflakes. It has been found that the composite structure exhibit excellent lithium storage performance with a large reversible capacity, superior cycling performance, and good rate capability as compared to pure SnS 2 nanoflakes. The first discharge and charge capacities have been found to be 1416 and 518 mA h g −1 for SnS 2 /MWCNTs composite electrodes at a current density of 100 mA g −1 between 5 mV and 1.15 V versus Li/Li + . A stable reversible capacity of ∼510 mA h g −1 is obtained for 50 cycles. The improved electrochemical performance may be attributed to the flake-morphology feature of SnS 2 and the addition of MWCNTs that can hinder the agglomeration of the active materials and improve the conductivity of the composite electrode simultaneously
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Tian, Pengfei; Lyu, Jun; Huang, Rui; Zhang, Chaoliang
2017-12-01
Piezoelectric one- (1D) and three-dimensional (3D) hybrid micro/nanostructured materials have received intense research interest because of their ability in capturing trace amounts of energy and transforming it into electrical energy. In this work, a size-distributed graphene oxide (GO) was utilized for the concurrent growth of both the 1D nanowires and 3D micro/nanowire architectures of poly (vinylidene fluoride) (PVDF) with piezoelectricity. The in situ formation of the polymeric micro/nanostructures, with crystalline beta phase, was achieved by the high-pressure crystallization of a well dispersed GO/PVDF composite, fabricated by an environmentally friendly physical approach. Particularly, by controlling the crystallization conditions of the binary composite at high pressure, the melting point of the polymeric micro/nanowires, which further constructed the 3D micro/nanoarchitectures, was nearly 30°C higher than that of the original PVDF. The large scale simultaneous formation of the 1D and 3D micro/nanostructures was attributed to a size-dependent catalysis of the GOs in the pressure-treated composite system. The as-fabricated heat-resistant hybrid micro/nanoarchitectures, consisting of GOs and piezoelectric PVDF micro/nanowires, may permit niche applications in self-powered micro/nanodevices for energy scavenging from their working environments.
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Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template
International Nuclear Information System (INIS)
Fan Hongjin; Knez, Mato; Scholz, Roland; Nielsch, Kornelius; Pippel, Eckhard; Hesse, Dietrich; Goesele, Ulrich; Zacharias, Margit
2006-01-01
Using MgO nanowires as a reactive template, we fabricated for the first time single-crystal MgAl 2 O 4 spinel nanotubes through an interfacial solid-state reaction of MgO-Al 2 O 3 core-shell nanowires. Single-crystal MgO nanowires are coated with a conformal thin layer of amorphous Al 2 O 3 via atomic layer deposition. Subsequent annealing at 700 deg. C activates the interfacial reaction between MgO and Al 2 O 3 , transforming the alumina shell into a spinel shell. Finally, after etching away the remaining MgO core in ammonia sulfuric solution, MgAl 2 O 4 spinel nanotubes are obtained. As a transition from conventional planar spinel layers via thin-film interface reactions, our result might open a window for the fabrication of a wide variety of MgO-based spinel one-dimensional nanostructures
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The critical current density of an SNS Josephson-junction in high magnetic fields
International Nuclear Information System (INIS)
Carty, George J; Hampshire, Damian P
2013-01-01
Although the functional form of the critical current density (J c ) of superconducting–normal–superconducting (SNS) Josephson-junctions (J-Js) has long been known in the very low field limit (e.g. the sinc function), includes the local properties of the junction and has been confirmed experimentally in many systems, there have been no such general solutions available for high fields. Here, we derive general analytic equations for J c in zero field and in high fields across SNS J-Js for arbitrary resistivity of the superconductor and the normal layer which are consistent with the literature results available in limiting cases. We confirm the validity of the approach using both computational solutions to time-dependent Ginzburg–Landau (TDGL) theory applied to SNS junctions and experimental J c data for an SNS PbBi–Cd–PbBi junction. We suggest that since SNS junctions can be considered the basic building blocks for the description of the grain boundaries of polycrystalline materials because they both provide flux-flow channels, this work may provide a mathematical framework for high J c technological polycrystalline superconductors in high magnetic fields. (paper)
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Directory of Open Access Journals (Sweden)
W. Z. Liu
2011-06-01
Full Text Available Single crystalline ZnO nanowires were fabricated on Si (100 substrates by catalyst-free high-pressure pulsed laser deposition. It is found that the nanowires start to form when the substrate temperature and growth pressure exceed the critical values of 700 oC and 700 Pa, and their size strongly depends on these growth conditions. That is, the aspect ratio of the nanowires decreases with increasing temperature or decreasing pressure. Such a size dependence on growth conditions was discussed in terms of surface migration and scattering of ablated atoms. Room-temperature photoluminescence spectrum of ZnO nanowires shows a dominant near-band-edge emission peak at 3.28 eV and a visible emission band centered at 2.39 eV. Temperature-dependent photoluminescence studies reveal that the former consists of the acceptor-bound exciton and free exciton emissions; while the latter varies in intensity with the aspect ratio of the nanowires and is attributed to the surface-mediated deep level emission.
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Ultraviolet photosensors fabricated with Ag nanowires coated with ZnO nanoparticles
Energy Technology Data Exchange (ETDEWEB)
Shen, Guan-Hung [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)
2014-11-03
We have developed a simple low temperature process to coat zinc oxide (ZnO) nanoparticles (NPs) on Ag nanowires (NWs) with well-controlled morphology. Triethanolamine (TEA) was employed to react with zinc acetate (Zn(CH{sub 3}COO){sub 2}) forming ZnO NPs. TEA was also found to enhance the nucleation and binding of ZnO NPs on the Ag nanowire surfaces facilitating a complete coverage of Ag nanowire surfaces with ZnO NPs. The effects of the process parameters including reaction time and reaction temperature were studied. The surfaces of 60 nm diameter Ag NWs could be completely covered with ZnO NPs with the final diameters of Ag-NWs@ZnO (core–shell NWs) turning into the range from 100 nm to 450 nm. The Ag-NWs@ZnO was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray mapping analysis, X-ray diffraction, and photoluminescence spectra. Finally, ultraviolet (UV) photosensors were fabricated using Ag-NWs@ZnO. They were found to improve photosensitivity with greatly enhanced fast response by reducing the recovery time by 2 orders, in comparison with the UV-sensors using single-crystalline ZnO NWs. - Highlights: • Solution process to coat ZnO nanoparticles on Ag nanowires has been developed. • Ultraviolet photosensing of ZnO nanoparticles coated on the Ag nanowires was found. • High defect concentration of ZnO nanoparticles enhanced the photosensing properties.
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Maas, M.G.; Rodijk, E.J.B.; Maijenburg, A.W.; Blank, David H.A.; ten Elshof, Johan E.
2011-01-01
The cathodic electrodeposition of crystalline ZnO nanowires and amorphous FeO(OH) nanotubes in polycarbonate track-etched membranes with pore diameters of 50–200 nm is reported. Nitrate was used as a sacrificial precursor for the electrochemical generation of hydroxyl ions that raised the pH of the
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Energy Technology Data Exchange (ETDEWEB)
Bandi, Vengala Rao; Raghavan, Chinnambedu Murugesan; Grandhe, Bhaskar kumar; Kim, Sang Su [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan 617-736 (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)
2013-11-29
Single crystalline pure and rare-earth metal ions (Eu{sup 3+} and Ce{sup 3+}) doped TiO{sub 2} nanowire arrays were prepared on conductive fluorine doped indium tin oxide substrates by a facile hydrothermal method. Initially the conditions and parameters were optimized to prepare the high quality TiO{sub 2} nanowire arrays in the absence of organic additives. The average diameter and length of the TiO{sub 2} nanowire were found to be ∼ 30–50 nm and ∼ 0.5–1.5 μm, respectively. The formations of rutile phase structure in all the samples were confirmed by x-ray diffractometric analysis while the transmission electron microscopy confirms the single crystallinity and the maximum orientation of growth direction along [001] for the as-grown TiO{sub 2} nanowire. The optical properties of all the samples were analyzed using photoluminescence spectroscopy. The photocatalytic properties of the pure and doped TiO{sub 2} were investigated for the decomposition of organic toludine blue-O dye under ultraviolet irradiation. The result demonstrates that the Ce{sup 3+}: TiO{sub 2} decomposed almost 90% of the organic dye within 80 min. - Highlights: • Rare-earth (RE) doped TiO{sub 2} nanowire arrays were prepared by hydrothermal method • RE doping enhanced the growth rate of TiO{sub 2} nanowire arrays • The catalysts used to check their photocatalytic activity by toludine blue-O dye • RE doped TiO2 act as unprecedented photocatalyst for organic dye decomposition.
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Neutron scattering instruments for the Spallation Neutron Source (SNS)
International Nuclear Information System (INIS)
Crawford, R.K.; Fornek, T.; Herwig, K.W.
1998-01-01
The Spallation Neutron Source (SNS) is a 1 MW pulsed spallation source for neutron scattering planned for construction at Oak Ridge National Laboratory. This facility is being designed as a 5-laboratory collaboration project. This paper addresses the proposed facility layout, the process for selection and construction of neutron scattering instruments at the SNS, the initial planning done on the basis of a reference set of ten instruments, and the plans for research and development (R and D) to support construction of the first ten instruments and to establish the infrastructure to support later development and construction of additional instruments
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Ga-doped indium oxide nanowire phase change random access memory cells
International Nuclear Information System (INIS)
Jin, Bo; Lee, Jeong-Soo; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I; Kim, Hyoung Seop; Meyyappan, M
2014-01-01
Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In 2 O 3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition. (paper)
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ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS
International Nuclear Information System (INIS)
Jia, Q.; Fan, Y.; Gim, Y.
1999-01-01
We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa 2 Cu 3 O 7-x (Ag:YBCO) as electrodes and a cation-modified compound of (Pr y Gd 0.6-y )Ca 0.4 Ba 1.6 La 0.4 Cu 3 O 7 (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature
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Commissioning and operation of the horizontal test apparatus at SNS
Energy Technology Data Exchange (ETDEWEB)
Kim, Sang-Ho [ORNL; Neustadt, Thomas S. [ORNL; Howell, Matthew P. [ORNL; Hannah, Brian S. [ORNL; Doleans, Marc [ORNL; Saunders, Jeffrey W. [ORNL
2015-07-01
The Spallation Neutron Source (SNS) at Oak Ridge National Lab (ORNL) has built, commissioned and operated a Horizontal Test Apparatus (HTA) vessel in the Radiofrequency Test Facility (RFTF) test cave. It can be operated at 4.5 K using the independent Cryogenic Test Facility (CTF). The HTA is designed to be a single cavity version of an SNS cryomodule with the ability to demount and replace the cavity. It provides the functionality for testing a single dressed SNS medium or high beta Superconducting Radiofrequency (SRF) cavity. The HTA is currently being used in support of R&D for in-situ plasma processing of the cavity's inner niobium surface. The design and commissioning of the HTA at 4.5 K will be presented as well as results from operating the HTA including cool-down, warm-up and steady state operations. Results from plasma processing a warm SCRF cavity in-between cold HTA tests will also be reported.
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Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition
International Nuclear Information System (INIS)
Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay
2011-01-01
An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.
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Simple Synthesis and Growth Mechanism of Core/Shell CdSe/SiOx Nanowires
Directory of Open Access Journals (Sweden)
Guozhang Dai
2010-01-01
Full Text Available Core-shell-structured CdSe/SiOx nanowires were synthesized on an equilateral triangle Si (111 substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone is SiOx amorphous layer and CdSe core was grown along (001 direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphous SiOx shells, respectively.
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Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization
Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong
2016-03-01
Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.
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Preparation and characterization of CdS/Si coaxial nanowires
Fu, X. L.; Li, L. H.; Tang, W. H.
2006-04-01
CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm -1, 2LO at 601 cm -1, A 1-TO at 212 cm -1, E 1-TO at 234 cm -1, and E 2 at 252 cm -1. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.
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Structure and magnetic properties of CoxCu1−x nanowires in self-assembled arrays
International Nuclear Information System (INIS)
Almasi Kashi, M.; Ramazani, A.; Adelnia Najafabadi, F.
2012-01-01
Highlights: ► Role of non-magnetic Cu on the microstructure and magnetic properties of Co x Cu 1−x nanowires. ► Composition variation through ac pulse electrodeposition. ► Replacement of Co with Cu by electroless phenomenon during the off-time between pulses. - Abstract: CoCu alloy nanowire arrays were ac-pulse electrodeposited into porous anodic aluminum oxide. The effect of off-time between pulses and Cu concentration on the magnetic properties, crystalline structure and weight percentage of Co x Cu 1−x alloy nanowires have been studied by alternating gradient force magnetometer (AGFM), X-ray diffraction pattern (XRD) and energy dispersed spectrometry (EDS), respectively. Increasing the off-time between pulses decreased the weight percentage of Co in the range of (x = 0.84 − 0.24). Results of EDS were in accordance with saturation magnetization per unit area of the samples. Coexistence of a moderate off-time and Cu concentration provided excellent conditions for fabrication of the composite nanowires which were proved by XRD patterns.
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International Nuclear Information System (INIS)
Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul
2012-01-01
High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.
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Labouchere, Philippe
2014-04-23
A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbone host. Using a combination of self-assembly, hydrothermal or electrodeposition of single crystalline ZnO nanowires and TiO2 passivation, a novel photoanode with scattering capability for optimal light harvesting is fabricated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Angular dependence of the coercivity in arrays of ferromagnetic nanowires
International Nuclear Information System (INIS)
Holanda, J.; Silva, D.B.O.; Padrón-Hernández, E.
2015-01-01
We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth
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Angular dependence of the coercivity in arrays of ferromagnetic nanowires
Energy Technology Data Exchange (ETDEWEB)
Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Silva, D.B.O. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil)
2015-03-15
We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth.
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International Nuclear Information System (INIS)
Lugo-Ruelas, M.; Amézaga-Madrid, P.; Esquivel-Pereyra, O.; Antúnez-Flores, W.; Pizá-Ruiz, P.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M.
2015-01-01
Highlights: • Nanorods and nanowires of CuO were successfully synthesized by AACVD technique. • The carrier gas velocity was a determinant factor for the growth of nanorods or nanowires. • The increase of deposition time generates the reduction in the evenness and distribution density. • The crystalline phase of nanorods and nanowires was monoclinic tenorite. - Abstract: Copper oxide is a particularly interesting material because it presents photovoltaic, electrochemical and catalytic properties. Its unique properties are very important in the area of nanotechnology and may be an advantage because these nanomaterials can be applied in the design and manufacture of nanosensors, photocatalysis area, nanolasers switches and transistors. Nowadays one-dimensional nanostructures as nanorods, nanowires, etc., have generated a great importance and have received considerable attention and study due to their unique physical and chemical properties. In this work we report the synthesis, microstructural characterization and optical properties of CuO nanorods and nanowires grown by aerosol assisted chemical vapor deposition onto a CuO, ZnO and TiO 2 thin film covered and bare borosilicate glass substrate. Concentration of the precursor solution and carrier gas flux were previously optimized and fixed at 0.1 mol dm −3 and 5 L min −1 , respectively. Other deposition parameters such as substrate temperature, as well the carrier gas velocity and deposition time were varied from 623 to 973 K, 0.88 to 1.77 m s −1 and 11 to 16 min, respectively. Their influence on the morphology, microstructure and optical properties of the nanorods and nanowires were analyzed. The crystalline structure of the materials was characterized by grazing incidence X-ray diffraction; results indicate the presence of the tenorite phase. Surface morphology and microstructure were studied by field emission scanning electron microscopy, and high resolution transmission electron microscopy. Optical
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Energy Technology Data Exchange (ETDEWEB)
Habiballah, Anisah Shafiqah [Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Jani, Abdul Mutalib Md, E-mail: abdmutalib@perlis.uitm.edu.my [Chemistry Department, Faculty of Applied Sciences, Universiti Teknologi MARA, 02600 Arau, Perlis (Malaysia); Mahmud, Abdul Hadi [Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Osman, Nafisah [Physics Department, Faculty of Applied Sciences, Universiti Teknologi MARA, 02600 Arau, Perlis (Malaysia); Radiman, Shahidan [Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)
2016-07-01
Template synthesis has been shown to be a popular and elegant route for fabricating a broad range of nanostructured materials such as nanowires, nanotubes or nanorods. These nanostructures can be used as building blocks in nanoscale electronic, magnetic and photonic devices. Nonetheless, there are still numerous challenges to control the intricate one-dimensional nanostructures with well-controlled size, phase purity, crystallinity and chemical composition. In this work, we synthesized Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3−δ} (BSCF) perovskite nanowires by templating approach for the first time; with varying the spin coating rate of 100, 500 and 1000 revolutions per minute (rpm), followed by drying (150 °C, 15 h) and calcination treatment (400–900 °C, 4 h). We only focused on structural properties, morphology and formation mechanism of BSCF nanowires by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and energy dispersive X-ray (EDX) analysis. The XRD profile confirmed at a calcination temperature of 900 °C, a single crystalline phase of BSCF nanowires was successfully obtained, in which congruent to the perovskite cubic structure of BSCF. Particularly, FESEM micrograph showed that a highly dense morphological distribution of BSCF nanowires has been successfully attained at a low spinning rate of 100 rpm, with the length range of 7–10 μm. The TEM image further confirmed the nanowires structure of BSCF. Besides, EDX analysis confirmed the stoichiometry percentages of Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3−δ}. The possible formation mechanism of the BSCF nanowires was also discussed in this paper. - Highlights: • BSCF nanowires were synthesized via template synthesis with spin coating technique. • Single crystalline phase of BSCF nanowires was successfully obtained at 900 °C. • Different spin rate will result in different BSCF
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Development of SNS Stream Analysis Based on Forest Disaster Warning Information Service System
Oh, J.; KIM, D.; Kang, M.; Woo, C.; Kim, D.; Seo, J.; Lee, C.; Yoon, H.; Heon, S.
2017-12-01
Forest disasters, such as landslides and wildfires, cause huge economic losses and casualties, and the cost of recovery is increasing every year. While forest disaster mitigation technologies have been focused on the development of prevention and response technologies, they are now required to evolve into evacuation and border evacuation, and to develop technologies fused with ICT. In this study, we analyze the SNS (Social Network Service) stream and implement a system to detect the message that the forest disaster occurred or the forest disaster, and search the keyword related to the forest disaster in advance in real time. It is possible to detect more accurate forest disaster messages by repeatedly learning the retrieved results using machine learning techniques. To do this, we designed and implemented a system based on Hadoop and Spark, a distributed parallel processing platform, to handle Twitter stream messages that open SNS. In order to develop the technology to notify the information of forest disaster risk, a linkage of technology such as CBS (Cell Broadcasting System) based on mobile communication, internet-based civil defense siren, SNS and the legal and institutional issues for applying these technologies are examined. And the protocol of the forest disaster warning information service system that can deliver the SNS analysis result was developed. As a result, it was possible to grasp real-time forest disaster situation by real-time big data analysis of SNS that occurred during forest disasters. In addition, we confirmed that it is possible to rapidly propagate alarm or warning according to the disaster situation by using the function of the forest disaster warning information notification service. However, the limitation of system application due to the restriction of opening and sharing of SNS data currently in service and the disclosure of personal information remains a problem to be solved in the future. Keyword : SNS stream, Big data, Machine
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Lead-free LiNbO3 nanowire-based nanocomposite for piezoelectric power generation
2014-01-01
In a flexible nanocomposite-based nanogenerator, in which piezoelectric nanostructures are mixed with polymers, important parameters to increase the output power include using long nanowires with high piezoelectricity and decreasing the dielectric constant of the nanocomposite. Here, we report on piezoelectric power generation from a lead-free LiNbO3 nanowire-based nanocomposite. Through ion exchange of ultra-long Na2Nb2O6-H2O nanowires, we synthesized long (approximately 50 μm in length) single-crystalline LiNbO3 nanowires having a high piezoelectric coefficient (d33 approximately 25 pmV-1). By blending LiNbO3 nanowires with poly(dimethylsiloxane) (PDMS) polymer (volume ratio 1:100), we fabricated a flexible nanocomposite nanogenerator having a low dielectric constant (approximately 2.7). The nanogenerator generated stable electric power, even under excessive strain conditions (approximately 105 cycles). The different piezoelectric coefficients of d33 and d31 for LiNbO3 may have resulted in generated voltage and current for the e33 geometry that were 20 and 100 times larger than those for the e31 geometry, respectively. This study suggests the importance of the blending ratio and strain geometry for higher output-power generation in a piezoelectric nanocomposite-based nanogenerator. PACS 77.65.-j; 77.84.-s; 73.21.Hb PMID:24386884
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Isomer shifts and chemical bonding in crystalline Sn(II) and Sn(IV) compounds
International Nuclear Information System (INIS)
Terra, J.; Guenzburger, D.
1991-01-01
First-principles self-consistent Local Density calculations of the electronic structure of clusters representing Sn(II) (SnO, SnF 2 , SnS, SnSe) and Sn(IV) (SnO 2 , SnF 4 ) crystalline compounds were performed. Values of the electron density at the Sn nucleus were obtained and related to measured values of the Moessbauer Isomer Shifts reported in the literature. The nuclear parameter of 119 Sn derived was ΔR/R=(1.58±0.14)x10 -4 . The chemical bonding in the solids was analysed and related to the electron densities obtained. (author)
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Synthesis of porous silicon nano-wires and the emission of red luminescence
International Nuclear Information System (INIS)
Congli, Sun; Hao, Hu; Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao; Xiaosong, Sun
2013-01-01
This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO 3 solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO 3 solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H 2 O 2 - treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.
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Synthesis of porous silicon nano-wires and the emission of red luminescence
Energy Technology Data Exchange (ETDEWEB)
Congli, Sun [School of Materials Science and Engineering, Sichuan University (China); Hao, Hu [National Engineering Research Center for Biomaterials, Sichuan University, Chengdu 610064, Sichuan (China); Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao [School of Materials Science and Engineering, Sichuan University (China); Xiaosong, Sun, E-mail: sunxs@scu.edu.cn [School of Materials Science and Engineering, Sichuan University (China)
2013-10-01
This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO{sub 3} solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO{sub 3} solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H{sub 2}O{sub 2}- treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.
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International Nuclear Information System (INIS)
Rodríguez-González, B.; Bran, C.; Warnatz, T.; Vazquez, M.; Rivas, J.
2014-01-01
Herein, we report on the preparation, structure, and magnetic characterization of FeCoCu nanowire arrays grown by DC electrodeposition inside self-assembled ordered nanopores of anodic aluminum oxide templates. A systematic study of their structure has been performed both in as-prepared samples and after annealing in the temperature range up to 800 °C, although particular attention has been paid to annealing at 700 °C after which maximum magnetic hardening is achieved. The obtained nanowires have a diameter of 40 nm and their Fe 0.28 Co 0.67 Cu 0.05 composition was confirmed by energy dispersive X-ray spectroscopy (EDS). Focused ion-beam lamellas of two samples (as-prepared and annealed at 700 °C) were prepared for their imaging in the high-resolution transmission electron microscopy (HRTEM) perpendicularly to the electron beam, where the obtained EDS compositional mappings show a homogeneous distribution of the elements. X-ray diffraction analysis, and selected area electron diffraction (SAED) patterns confirm that nanowires exhibit a bcc cubic structure (space group Im-3m). In addition, bright-dark field images show that the nanowires have a polycrystalline structure that remains essentially the same after annealing, but some modifications were observed: (i) an overall increase and sharpening of recrystallized grains, and (ii) an apparent shrinkage of the nanowires diameter. Obtained SAED patterns also show strong textured components with determined and crystalline directions parallel to the wires growth direction. The presence of both directions was also confirmed in the HRTEM images doing Fourier transform analyses. Magnetic measurements show strong magnetic anisotropy with magnetization easy axis parallel to the nanowires in as-prepared and annealed samples. The magnetic properties are tuned by suitable thermal treatments so that, maximum enhanced coercivity (∼2.7 kOe) and normalized remanence (∼0.91 Ms) values are achieved after annealing at
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Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires
Directory of Open Access Journals (Sweden)
Ali Vazinishayan
2018-06-01
Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure
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DATA ACQUISITION FOR SNS BEAM LOSS MONITOR SYSTEM
International Nuclear Information System (INIS)
YENG, Y.; GASSNER, D.; HOFF, L.; WITKOVER, R.
2003-01-01
The Spallation Neutron Source (SNS) beam loss monitor system uses VME based electronics to measure the radiation produced by lost beam. Beam loss signals from cylindrical argon-filled ion chambers and neutron detectors will be conditioned in analog front-end (AFE) circuitry. These signals will be digitized and further processed in a dedicated VME crate. Fast beam inhibit and low-level, long-term loss warnings will be generated to provide machine protection. The fast loss data will have a bandwidth of 35kHz. While the low level, long-term loss data will have much higher sensitivity. This is further complicated by the 3 decade range of intensity as the Ring accumulates beam. Therefore a bandwidth of 100kHz and dynamic range larger than 21 bits data acquisition system will be required for this purpose. Based on the evaluation of several commercial ADC modules in preliminary design phase, a 24 bits Sigma-Delta data acquisition VME bus card was chosen as the SNS BLM digitizer. An associated vxworks driver and EPICS device support module also have been developed at BNL. Simulating test results showed this system is fully qualified for both fast loss and low-level, long-term loss application. The first prototype including data acquisition hardware setup and EPICS software (running database and OPI clients) will be used in SNS Drift Tube Linac (DTL) system commissioning
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Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires
Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming
2018-06-01
In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.
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Large-Scale Synthesis of Transition-Metal-Doped TiO2 Nanowires with Controllable Overpotential
Energy Technology Data Exchange (ETDEWEB)
Liu, Bin; Chen, HaoMing; Liu, Chong; Andrews, Sean; Han, Chris; Yang, Peidong
2013-03-13
Practical implementation of one-dimensional semiconductors into devices capable of exploiting their novel properties is often hindered by low product yields, poor material quality, high production cost, or overall lack of synthetic control. Here, we show that a molten-salt flux scheme can be used to synthesize large quantities of high-quality, single-crystalline TiO2 nanowires with controllable dimensions. Furthermore, in situ dopant incorporation of various transition metals allows for the tuning of optical, electrical, and catalytic properties. With this combination of control, robustness, and scalability, the molten-salt flux scheme can provide high-quality TiO2 nanowires to satisfy a broad range of application needs from photovoltaics to photocatalysis.
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Energy Technology Data Exchange (ETDEWEB)
Hu, Chi-Chang; Hung, Ching-Yun [Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 30013 (China); Chang, Kuo-Hsin [Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 30013 (China); Department of Chemical Engineering, National Chung Cheng University, Chia-Yi 621 (China); Yang, Yi-Lin [Department of Chemical Engineering, National Chung Cheng University, Chia-Yi 621 (China)
2011-01-15
In this communication, a porous hierarchical nanostructure consisting of amorphous MnO{sub 2} (a-MnO{sub 2}), Mn{sub 3}O{sub 4} nanocrystals, and single-crystalline MnOOH nanowires is designed for the supercapacitor application, which is prepared by a simple two-step electrochemical deposition process. Because of the gradual co-transformation of Mn{sub 3}O{sub 4} nanocrystals and a-MnO{sub 2} nanorods into an amorphous manganese oxide, the cycle stability of a-MnO{sub 2} is obviously enhanced by adding Mn{sub 3}O{sub 4}. This unique ternary oxide nanocomposite with 100-cycle CV activation exhibits excellent capacitive performances, i.e., excellent reversibility, high specific capacitances (470 F g{sup -1} in CaCl{sub 2}), high power property, and outstanding cycle stability. The highly porous microstructures of this composite before and after the 10,000-cycle CV test are examined by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM). (author)
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Template-free synthesis of novel SnS2 array and its superior performances for lithium ion battery
Zhu, Anquan; Qiao, Lulu; Tan, Pengfei; Ma, Yongjin; Liu, Yi; Pan, Jun
2018-05-01
A kind of novel three-dimensional SnS2 array was fabricated by an ethylenediamine (EDA) assisting low-temperature solvothermal method. It was observed that as-obtained SnS2 array was composed of numerous SnS2 nanosheets with the thickness of about 22 nm. When used as lithium ion batteries (LIBs) anode, the SnS2 array displayed remarkable capacities on rate and cycling performances, delivering the rates with reversible capacities of 763.3, 658.6, 593.6, 554.4 and 450.3 mAh g-1 at the current densities of 0.2, 0.5, 1, 2 and 5 A g-1, respectively. Moreover, the satisfactory cycling performance was also disclosed, remaining capacity of 547.8 mAh g-1 after 100th cycle at 0.2 A g-1, better than some reported pure SnS2 nanostructures. Based on the characterization and experimental results, the reasons of such superior electrochemical performances were determined and elaborated. It means that the SnS2 array possesses promising potential on the renewable energy field.
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Comparative study of SnS recrystallization in molten CdI{sub 2}, SnCl{sub 2}and KI
Energy Technology Data Exchange (ETDEWEB)
Timmo, Kristi; Kauk-Kuusik, Marit; Pilvet, Maris; Mikli, Valdek; Kaerber, Erki; Raadik, Taavi; Leinemann, Inga; Altosaar, Mare; Raudoja, Jaan [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia)
2016-01-15
In the present study, the recrystallization of polycrystalline SnS in different molten salts CdI{sub 2}, SnCl{sub 2} and KI as flux materials are presented. The recrystallization and growth of polycrystalline material in molten salts produces unique SnS monograin powders usable in monograin layer solar cells. XRD and Raman analysis revealed that single phase SnS powder can be obtained in KI at 740 C and in SnCl{sub 2} at 500 C. Long time heating of SnS in molten CdI{sub 2} was accompanied by chemical interaction between SnS and CdI{sub 2} that resulted in a mixture of CdS and Sn{sub 2}S{sub 3} crystals. SEM images showed that morphology of crystals can be controlled by the nature of the flux materials: needle-like Sn{sub 2}S{sub 3} together with round edged crystals of CdS in CdI{sub 2}, flat crystals of SnS with smooth surfaces in SnCl{sub 2} and well-formed SnS crystals with rounded edges in KI had been formed. The temperatures of phase transitions and/or the interactions of SnS and flux materials were determined by differential thermal analysis. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Reactivation and reuse of TiO2-SnS2 composite catalyst for solar-driven water treatment.
Kovacic, Marin; Kopcic, Nina; Kusic, Hrvoje; Stangar, Urska Lavrencic; Dionysiou, Dionysios D; Bozic, Ana Loncaric
2018-01-01
One of the most important features of photocatalytic materials intended to be used for water treatment is their long-term stability. The study is focused on the application of thermal and chemical treatments for the reactivation of TiO 2 -SnS 2 composite photocatalyst, prepared by hydrothermal synthesis and immobilized on the glass support using titania/silica binder. Such a catalytic system was applied in solar-driven treatment, solar/TiO 2 -SnS 2 /H 2 O 2 , for the purification of water contaminated with diclofenac (DCF). The effectiveness of studied reactivation methods for retaining TiO 2 -SnS 2 activity in consecutive cycles was evaluated on basis of DCF removal and conversion, and TOC removal and mineralization of organic content. Besides these water quality parameters, biodegradability changes in DCF aqueous solution treated by solar/TiO 2 -SnS 2 /H 2 O 2 process using simply reused (air-dried) and thermally and chemically reactivated composite photocatalyst through six consecutive cycles were monitored. It was established that both thermal and chemical reactivation retain TiO 2 -SnS 2 activity in the second cycle of its reuse. However, both treatments caused the alteration in the TiO 2 -SnS 2 morphology due to the partial transformation of visible-active SnS 2 into non-active SnO 2 . Such alteration, repeated through consecutive reactivation and reuse, was reflected through gradual activity loss of TiO 2 -SnS 2 composite in applied solar-driven water treatment.
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Hole-dominated transport in InSb nanowires grown on high-quality InSb films
Energy Technology Data Exchange (ETDEWEB)
Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)
2016-12-15
We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.
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Hole-dominated transport in InSb nanowires grown on high-quality InSb films
Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.
2016-12-01
We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.
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INJECTION CARBON STRIPPING FOIL ISSUES IN THE SNS ACCUMULATOR RING
International Nuclear Information System (INIS)
BEEBE-WANG, J.; LEE, Y.Y.; RAPARIA, D.; WEI, J.
2001-01-01
We are reporting the results of studies on issues related to the injection stripping foil in the Spallation Neutron Source (SNS) accumulator ring. The problems related to foil heating and foil lifetime, such as current density distribution and temperature distribution in the foil, are investigated. The impact of injection errors on the beam losses at the foil is studied. The particle traversal rate and the beam losses due to scattering in the foil are summarized. Finally, SNS end-to-end simulation results of the foil-missing rate, the foil-hitting rate and the maximum foil temperature are presented
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Combinatorial development of Cu2SnS3 as an earth abundant photovoltaic absorber
Baranowski, Lauryn L.
The development of high efficiency, earth abundant photovoltaic absorbers is critical if photovoltaics are to be implemented on the TW scale. Although traditional thin films absorbers such as Cu(In,Ga)Se2 and CdTe have achieved over 20% device efficiencies, the ultimately scalability of these devices may be limited by elemental scarcity and toxicity issues. To date, the most successful earth abundant thin film absorber is Cu2ZnSn(S,Se) 4, which has achieved 12.6% efficiency as of 2014. However, chemical complexity and disorder issues with this material have made the path to higher efficiency CZTSSe devices unclear. As a result, many researchers are now exploring alternative earth abundant absorber materials. In this thesis, we apply our "rapid development" methodology to the exploration of alternative photovoltaic absorbers. The rapid development (RD) methodology, consisting of exploration, research, and development stages, uses complementary theory and experiment to assess candidate materials and down-select in each stage. The overall result is that, in the time span of ~2-3 years, we are able to rapidly go from tens of possible absorber materials to 1-2 working PV device prototypes. Here, we demonstrate the RD approach as applied to the Cu-Sn-S system. We begin our investigation of the Cu-Sn-S system by evaluating the thermodynamic stability, electrical transport, electronic structure, and optical and defect properties of candidate materials using complementary theory and experiment. We find that Cu2SnS3 is the most promising absorber candidate because of its strong optical absorption, tunable doping, and wide stability range. Our other candidate compounds suffer from serious flaws that preclude them from being successful photovoltaic absorbers, including too high experimental conductivity (Cu4SnS4), or poor hole transport and low absorption coefficient (Cu4Sn7S16). Next, we investigate the doping and defect physics of Cu2SnS 3. We identify the origins of the
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Status of the SNS superconducting linac and future plan
International Nuclear Information System (INIS)
Kim, Sang-Ho
2008-01-01
The use of superconducting radiofrequency (SRF) cavities in particle accelerator is becoming more widespread. Among the projects that make use of that technology is the Spallation Neutron Source, where H- ions are accelerated to about 1 GeV, mostly making use of niobium elliptical cavities. SNS generates neutrons by the spallation reaction with the accelerated short (about 700 ns) sub-bunches of protons, which will in turn allow probing structural and magnetic properties of new and existing materials. The SNS superconducting linac is the largest application of RF superconductivity to come on-line in the last decade and has been operating with beam for almost two years. As the first operational pulsed superconducting linac, many of the aspects of its performance were unknown and unpredictable. A lot of experiences and data have been gathered on the pulsed behavior of cavities and cryomodules at various repetition rates and at various temperatures during the commissioning of its components and beam operations. This experience is of great value in determining future optimizations of SNS as well in guiding in the design and operation of future pulsed superconducting linacs. The testing of the superconducting cavities, the operating experience with beam, the performance of the superconducting linac and the future plans will be presented.
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International Nuclear Information System (INIS)
Miller, T.M.; Pevey, R.E.; Lillie, R.A.; Johnson, J.O.
2000-01-01
A detailed radiation transport analysis of the Spallation Neutron Source (SNS) shutters is important for the construction of the SNS because of its impact on conventional facility design, normal operation of the facility, and maintenance operations. Thus far the analysis of the SNS shutter travel gaps has been completed. This analysis was performed using coupled Monte Carlo and multi-dimensional discrete ordinates calculations
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Energy Technology Data Exchange (ETDEWEB)
Sarfraz, Mansoor; Aboud, Mohamed F.A.; Shakir, Imran, E-mail: shakir@skku.edu
2015-11-25
Orthorhombic molybdenum trioxide (α-MoO{sub 3}) nanowires as an electrode for electrochemical supercapacitors in ethylammonium nitrate (EAN) electrolyte exhibits a high specific capacitance of 288 Fg{sup −1}, which is 8 times higher than the specific capacitance obtained from MoO{sub 3} nanowires in water based electrolyte. MoO{sub 3} nanowires in EAN electrolyte exhibit energy density of 46.32 Wh kg{sup −1} at a power density of 20.3 kW kg{sup −1} with outstanding cycling stability with specific capacitance retention of 96% over 3000 cycles. We believe that the superior performance of the MoO{sub 3} nanowires in EAN based electrolyte is primarily due to its relatively low viscosity (0.28 P at 25 °C), high electrical conductivity (20 mS cm{sup −1} at 25 °C) and large working voltage window. The results clearly demonstrate that EAN as electrolyte is one of the most promising electrolyte for high performance large scale energy storage devices. - Highlights: • Synthesis of single crystalline molybdenum oxide nanowires. • Ethylammonium Nitrate as an electrolyte for high performance large scale psuedocapacitor based energy storage devices. • Molybdenum oxide nanowires based electrodes shows 8 fold enhancement in Ethylammonium Nitrate electrolyte as compared to water based electrolytes. • The devices in Ethylammonium Nitrate exhibit excellent stability, retaining 96% of its initial capacity after 3000 cycles.
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Strong sp-d exchange coupling in ZnMnTe/ZnMgTe core/shell nanowires
Energy Technology Data Exchange (ETDEWEB)
Wojnar, Piotr; Janik, Elzbieta; Szymura, Malgorzata; Zaleszczyk, Wojciech; Kret, Slawomir; Klopotowski, Lukasz; Wojciechowski, Tomasz; Baczewski, Lech T.; Wiater, Maciej; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Suffczynski, Jan; Papierska, Joanna [Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00-681 Warsaw (Poland)
2014-07-15
In this work, our recent progress in the growth and optical studies of telluride nanowire heterostructures containing a small molar fraction of magnetic Mn-ions of only a few percent is overviewed. ZnMnTe/ZnMgTe core/shell nanowires (NWs) are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalyst. The structures are studied by means of photoluminescence and microphotoluminescence in an external magnetic field. In the first step, however, an activation of the near band edge emission from ZnTe and ZnMnTe nanowires is described, which is achieved by coating the nanowires with shells made of ZnMgTe. The role of these shells is to passivate Zn(Mn)Te surface states. The incorporation of Mn ions into the crystalline lattice of ZnMnTe nanowires is manifested as a considerable blue shift of near band edge emission with increasing Mn concentration inside the nanowire cores, which reflects directly the increase of their energy gap. In an external magnetic field the near band edge emission exhibits a giant spectral redshift accompanied by an increase of the circular polarization of the emitted light. Both effect are fingerprints of giant Zeeman splitting of the band edges due to sp-d exchange interaction between the band carriers and magnetic Mn-ions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies
Energy Technology Data Exchange (ETDEWEB)
Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping, E-mail: pliu@uta.edu
2017-07-12
The exchange-bias field (H{sub EB}) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H{sub EB}) up to 2.4 kOe is observed below a blocking temperature (T{sub EB} ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H{sub EB} and the applied magnetization direction. The H{sub EB} showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.
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Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies
International Nuclear Information System (INIS)
Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping
2017-01-01
The exchange-bias field (H EB ) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H EB ) up to 2.4 kOe is observed below a blocking temperature (T EB ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H EB and the applied magnetization direction. The H EB showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.
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Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells
Energy Technology Data Exchange (ETDEWEB)
Majidi, Hasti [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States); Baxter, Jason B., E-mail: jbaxter@drexel.ed [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States)
2011-02-15
We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size {approx}5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of {approx}2 mA cm{sup -2} for nanowires with roughness factor of {approx}10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.
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Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells
International Nuclear Information System (INIS)
Majidi, Hasti; Baxter, Jason B.
2011-01-01
We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size ∼5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of ∼2 mA cm -2 for nanowires with roughness factor of ∼10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.
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THIN DIAMOND FILMS FOR SNS H INJECTIONS STRIPPING
International Nuclear Information System (INIS)
SHAW, R.W.; HERR, A.D.; FEIGERLE, C.S.; CUTLER, R.J.; LIAW, C.J.; LEE, Y.Y.
2004-01-01
We have investigated the preparation and testing of thin diamond foils for use in stripping the SNS H - Linac beam. A long useful lifetime for these foils is desirable to improve operational efficiency. Preliminary data presented at PAC 2001 indicated that diamond foils were superior to conventional evaporated carbon foils, exhibiting lifetimes approximately five-fold longer [1]. That work employed a fully supported diamond foil, a format that is not acceptable for the SNS application; at least two edges of the approximately 1 x 1 cm foils must be free standing to allow for beam rastering. Residual stress in a chemical vapor deposited (CVD) diamond foil results in film distortion (scrolling) when the film is released from its silicon growth substrate. We have attacked this problem by initially patterning the surface of CVD growth substrates with a 50 or 100 line/inch trapezoidal grating, followed by conformal diamond film growth on the patterned substrate. Then removal of the substrate by chemical etching produced a foil that possessed improved mechanical integrity due to its corrugation. The high nucleation density required to grow continuous, pinhole free diamond foils of the desired thickness (1 (micro)m, 350 (micro)g/cm 2 ) was achieved by a combination of substrate surface scratching and seeding. A variety of diamond foils have been tested using the BNL 750 keV Radio Frequency Quadrupole H - beam to simulate energy loss in the SNS. Those include flat, corrugated, microcrystalline, and nanocrystalline foils. Foil lifetimes are reported
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Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks
Energy Technology Data Exchange (ETDEWEB)
Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University
2012-01-01
Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.
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SNS online display technologies for EPICS
International Nuclear Information System (INIS)
Kasemir, K.U.; Chen, X.; Purcell, J.; Danilova, E.
2012-01-01
The ubiquitousness of web clients from personal computers to cell phones results in a growing demand for web-based access to control system data. At the Oak Ridge National Laboratory Spallation Neutron Source (SNS) we have investigated different technical approaches to provide read access to data in the Experimental Physics and Industrial Control System (EPICS) for a wide variety of web client devices. The core web technology, HTTP, is less than ideal for online control system displays. Appropriate use of Ajax, especially the Long Poll paradigm, can alleviate fundamental HTTP limitations. The SNS Status web uses basic Ajax technology to generate generic displays for a wide audience. The Dashboard uses Long Poll and more client-side Java-Script to offer more customization and faster updates for users that need specialized displays. The Web OPI uses RAP for web access to any BOY display, offering utmost flexibility because users can create their own BOY displays in CSS. These three approaches complement each other. Users can access generic status displays with zero effort, invest time in creating their fully customized displays for the Web OPI, or use the Dashboard as an intermediate solution
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International Nuclear Information System (INIS)
Charlton, L.A.; Barnes, J.M.; Gabriel, T.A.; Johnson, J.O.
1997-01-01
The pulsed-neutron source SNS facility will start operation at 1 MW. A later upgrade to 5 MW is planned. The facility consists of a linear accelerator, an accumulator ring, and a target station. The protons from the accumulator ring will be injected into the target station at 1 GeV. The subsequent spallation process will then produce low-energy thermal neutrons that may be used for a wide variety of experiments. In this paper the authors discuss neutronic calculations which address various aspects of the moderate design. The computer codes HETC and MCNP were used for these calculations with the former code performing the high-energy transport. Neutrons which fell in energy to 20 MeV or less were then passed to MCNP for further transport
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International Nuclear Information System (INIS)
Isidoro Campisi; Edward Daly; G. Davis; Jean Delayen; Michael Drury; Christiana Grenoble; John Hogan; Lawrence King; Peter Kneisel; John Mammosser; Thomas Powers; Joseph Preble; Mircia Stirbet; Haipeng Wang; Tim Whitlatch; Mark Wiseman
2003-01-01
Thomas Jefferson National Accelerating Facility, Jefferson Lab, is producing 24 Superconducting Radio FR-equency (SRF) cryomodules for the Spallation Neutron Source (SNS) cold linac. This includes one medium beta (0.61) prototype, 11 medium beta production, and 12 high beta (0.81) production cryomodules. After testing [ ], the medium beta prototype cryomodule was shipped to Oak Ridge National Laboratory (ORNL) and acceptance check out has been completed. All production orders for cavities and cryomodule components are being received at this time and the medium beta cryomodule production run has started. Each of the medium beta cryomodules is scheduled to undergo complete operational performance testing at Jefferson Laboratory before shipment to ORNL. The performance results of cryomodules to date will be discussed
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Deformation Monitoring of the Spallation Neutron Source (SNS) Tunnels
Error, J J; Fazekas, J J; Helus, S A; Maines, J R
2005-01-01
The SNS Project is a 1.4 MW accelerator-based neutron source located at Oak Ridge National Laboratory in Oak Ridge, Tennessee. For shielding purposes, a 17 foot berm of native soil has been constructed on top of the accelerator tunnel system. This backfill has caused ongoing settlement of the tunnels. The settlement has been monitored by the SNS Survey and Alignment Group at regular intervals, in order to discover the patterns of deformation, and to determine when the tunnels will be stable enough for precise alignment of beam line components. The latest monitoring results indicate that the settlement rate has significantly decreased. This paper discusses the techniques and instrumentation of the monitoring surveys, and provides an analysis of the results.
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Space charge and magnet error simulations for the SNS accumulator ring
International Nuclear Information System (INIS)
Beebe-Wang, J.; Fedotov, A.V.; Wei, J.; Machida, S.
2000-01-01
The effects of space charge forces and magnet errors in the beam of the Spallation Neutron Source (SNS) accumulator ring are investigated. In this paper, the focus is on the emittance growth and halo/tail formation in the beam due to space charge with and without magnet errors. The beam properties of different particle distributions resulting from various injection painting schemes are investigated. Different working points in the design of SNS accumulator ring lattice are compared. The simulations in close-to-resonance condition in the presence of space charge and magnet errors are presented. (author)
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Directory of Open Access Journals (Sweden)
Couteau C.
2015-05-01
Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.
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Structural and optical characteristics of SnS thin film prepared by SILAR
Directory of Open Access Journals (Sweden)
Mukherjee A.
2015-12-01
Full Text Available SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR method. The films were prepared using tin chloride as tin (Sn source and ammonium sulfide as sulphur (S source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.
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International Nuclear Information System (INIS)
Kumar, R. Rakesh; Rao, K. Narasimha; Rajanna, K.; Phani, A.R.
2014-01-01
Highlights: • ITO nanowires were grown by e-beam evaporation method. • ITO nanowires growth done at low substrate temperature of 350 °C. • Nanowires growth was carried out without use of catalyst and reactive oxygen gas. • Nanowires growth proceeds via self catalytic VLS growth. • Grown nanowires have diameter 10–20 nm and length 1–4 μm long. • ITO nanowire films have shown good antireflection property. - Abstract: We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250–400 °C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (∼10–15 nm) and micron long ITO NWs growth was observed in a temperature window of 300–400 °C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300–400 °C have shown ∼2–6% reflection and ∼70–85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices
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Crystallographically driven magnetic behaviour of arrays of monocrystalline Co nanowires
Ivanov, Yurii P.
2014-11-07
Cobalt nanowires, 40 nm in diameter and several micrometers long, have been grown by controlled electrodeposition into ordered anodic alumina templates. The hcp crystal symmetry is tuned by a suitable choice of the electrolyte pH (between 3.5 and 6.0) during growth. Systematic high resolution transmission electron microscopy imaging and analysis of the electron diffraction patterns reveals a dependence of crystal orientation from electrolyte pH. The tailored modification of the crystalline signature results in the reorientation of the magnetocrystalline anisotropy and increasing experimental coercivity and squareness with decreasing polar angle of the \\'c\\' growth axis. Micromagnetic modeling of the demagnetization process and its angular dependence is in agreement with the experiment and allows us to establish the change in the character of the magnetization reversal: from quasi-curling to vortex domain wall propagation modes when the crystal \\'c\\' axis tilts more than 75° in respect to the nanowire axis.
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Tarkas, Hemant S.; Marathe, Deepak M.; Mahajan, Mrunal S.; Muntaser, Faisal; Patil, Mahendra B.; Tak, Swapnil R.; Sali, Jaydeep V.
2017-02-01
Synthesis of monomorphic, SnS nanoparticles without using a capping agent is a difficult task with chemical route of synthesis. This paper reports on synthesis of tin monosulfide (SnS) nanopartilces with dimension in the quantum-dot regime using surfactant free microemulsion with single microemulsion scheme. This has been achieved by reaction in microreactors in the CME (C: chlorobenzene, M: methanol and E: ethylene glycol) microemulsion system. This is an easy and controllable chemical route for synthesis of SnS nanoparticles. Nanoparticle diameter showed prominent dependence on microemulsion concentration and marginal dependence on microemulsion temperature in the temperature range studied. The SnS nanoparticles formed with this method form stable dispersion in Tolune.
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International Nuclear Information System (INIS)
Luo, Jin; Zhou, Xiaosong; Ma, Lin; Xu, Xuyao; Wu, Jingxia; Liang, Huiping
2016-01-01
Highlights: • Novel visible-light-driven Ag 2 CrO 4 /SnS 2 composites are synthesized. • Ag 2 CrO 4 /SnS 2 exhibits higher photocatalytic activity than pure Ag 2 CrO 4 and SnS 2 . • Ag 2 CrO 4 /SnS 2 exhibits excellent stability for the photodegradation of MO. • The possible photocatalytic mechanism was discussed in detail. - Abstract: Novel Ag 2 CrO 4 /SnS 2 composites were prepared by a simple chemical precipitation method and characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV–vis diffuse reflectance spectroscopy and photoluminescence spectroscopy. The visible light photocatalytic tests showed that the Ag 2 CrO 4 /SnS 2 composites enhanced photocatalytic activities for the photodegradation of methyl orange (MO) under visible light irradiation (λ > 420 nm), and the optimum rate constant of Ag 2 CrO 4 /SnS 2 at a weight content of 1.0% Ag 2 CrO 4 for the degradation of MO was 2.2 and 1.5 times larger than that of pure Ag 2 CrO 4 and SnS 2 , respectively. The improved activity could be attributed to high separation efficiency of photogenerated electrons-hole pairs on the interface of Ag 2 CrO 4 and SnS 2 , which arised from the synergistic effect between Ag 2 CrO 4 and SnS 2 . Moreover, the possible photocatalytic mechanism with superoxide radical anions and holes species as the main reactive species in photocatalysis process was proposed on the basis of experimental results.
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Magnetic properties of {alpha}-Fe and Fe{sub 3}C nanowires
Energy Technology Data Exchange (ETDEWEB)
Lutz, M U; Weissker, U; Wolny, F; Mueller, C; Loeffler, M; Muehl, T; Leonhardt, A; Buechner, B; Klingeler, R, E-mail: m.lutz@ifw-dresden.d [Leibniz Institute for Solid State and Materials Research IFW Dresden, Helmholtzstrasse 20, 01069 Dresden (Germany)
2010-01-01
The magnetic properties of single domain {alpha}-Fe and Fe{sub 3}C nanowires encapsulated within Multi Walled Carbon Nanotubes (MWNT) are investigated with a Magnetic Force Microscope (MFM). The wires are formed during the Chemical Vapour Deposition growth process, partially filling the hollow center of the MWNTs. The wires have a diameter variation of 10-60nm and can be several {mu}m long. The phase and crystal orientation of the filling relative to the long tube axis are probed by Transmission Electron Microscopy. The remanent magnetization states of the wires are investigated by MFM imaging. The {alpha}-Fe wires show shape dominated magnetization along the tube axis, whereas the FesC wires show a perpendicular magnetization imposed by magneto-crystalline anisotropy. Switching fields of {alpha}-Fe nanowires are determined by the application of an in-situ magnetic field, revealing a tip triggered magnetization reversal by localized nucleation.
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Modulator considerations for the SNS RF system
International Nuclear Information System (INIS)
Tallerico, P.J.; Reass, W.A.
1998-01-01
The Spallation Neutron Source (SNS) is an intense neutron source for neutron scattering experiments. The project is in the research stage, with construction funding beginning next year. The SNS is comprised of an ion source, a 1,000 MeV, H - linear accelerator, an accumulator ring, a neutron producing target, and experimental area to utilize the scattering of the neutrons. The linear accelerator is RF driven, and the peak beam current is 27 mA and the beam duty factor is 5.84%. The peak RF power required is 104 MW, and the H - beam pulse length is 0.97 ms at a 60 Hz repetition rate. The RF pulses must be about 0.1 ms longer than the beam pulses, due to the Q of the accelerating cavities, and the time required to establish control of the cavity fields. The modulators for the klystrons in this accelerator are discussed in this paper. The SNS is designed to be expandable, so the beam power can be doubled or even quadrupled in the future. One of the double-power options is to double the beam pulse length and duty factor. The authors are specifying the klystrons to operate in this twice-duty-factor mode, and the modulator also should be expandable to 2 ms pulses at 60 Hz. Due to the long pulse length and low RF frequency of 805 MHz, the klystron power is specified at 2.5 MW peak, and the RF system will have 56 klystrons at 805 MHz, and three 1.25 MW peak power klystrons at 402.5 MHz for the low energy portion of the accelerator. The low frequency modulators are conventional floating-deck modulation anode control systems
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Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.
2012-01-01
Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.
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The US spallation neutron source (SNS) project
International Nuclear Information System (INIS)
Alonso, J.R.
1999-01-01
The SNS is a 1 MW pulsed spallation neutron source that will be sited at Oak Ridge. It will consist of a high-current, normal-conducting linac accelerating an H - beam to 1 GeV, an accumulator ring which compresses each 1 ms linac pulse into a 600 ns bunch which is then extracted in a single turn onto a liquid mercury target. Neutron pulses emerge at a 60 Hz rate from the two ambient, and two cryogenic moderators. Eighteen beam ports surrounding the target station are available for neutron-scattering instrumentation. Funds for ten instruments are included in the construction project; these instruments will provide basic measurement capability for the many and varied research activities at the SNS facility. The new spallation source is being built by a consortium of laboratories; the partners are LBNL, LANL, BNL, ANL and ORNL. The breadth and depth of experience and resources brought by such a wide-spread team offers very significant advantages. Construction will start in October of 1998, operation will begin in October, 2005. (J.P.N.)
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Energy Technology Data Exchange (ETDEWEB)
Rodríguez-González, B., E-mail: jbenito@uvigo.es [CACTI, University of Vigo, E-36310 Vigo (Spain); International Iberian Nanotechnology Laboratory, INL. Av. Mestre J. Veiga, 4715-330 Braga (Portugal); Bran, C.; Warnatz, T.; Vazquez, M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Rivas, J. [International Iberian Nanotechnology Laboratory, INL. Av. Mestre J. Veiga, 4715-330 Braga (Portugal)
2014-04-07
Herein, we report on the preparation, structure, and magnetic characterization of FeCoCu nanowire arrays grown by DC electrodeposition inside self-assembled ordered nanopores of anodic aluminum oxide templates. A systematic study of their structure has been performed both in as-prepared samples and after annealing in the temperature range up to 800 °C, although particular attention has been paid to annealing at 700 °C after which maximum magnetic hardening is achieved. The obtained nanowires have a diameter of 40 nm and their Fe{sub 0.28}Co{sub 0.67}Cu{sub 0.05} composition was confirmed by energy dispersive X-ray spectroscopy (EDS). Focused ion-beam lamellas of two samples (as-prepared and annealed at 700 °C) were prepared for their imaging in the high-resolution transmission electron microscopy (HRTEM) perpendicularly to the electron beam, where the obtained EDS compositional mappings show a homogeneous distribution of the elements. X-ray diffraction analysis, and selected area electron diffraction (SAED) patterns confirm that nanowires exhibit a bcc cubic structure (space group Im-3m). In addition, bright-dark field images show that the nanowires have a polycrystalline structure that remains essentially the same after annealing, but some modifications were observed: (i) an overall increase and sharpening of recrystallized grains, and (ii) an apparent shrinkage of the nanowires diameter. Obtained SAED patterns also show strong textured components with determined <111> and <112> crystalline directions parallel to the wires growth direction. The presence of both directions was also confirmed in the HRTEM images doing Fourier transform analyses. Magnetic measurements show strong magnetic anisotropy with magnetization easy axis parallel to the nanowires in as-prepared and annealed samples. The magnetic properties are tuned by suitable thermal treatments so that, maximum enhanced coercivity (∼2.7 kOe) and normalized remanence (∼0.91 Ms) values are
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He, Chunyong; Chang, Shiyong; Huang, Xiangdong; Wang, Qingquan; Mei, Ao; Shen, Pei Kang
2015-02-01
The Magnéli phase Ti8O15 nanowires (NWs) have been grown directly on a Ti substrate by a facile one-step evaporation-deposition synthesis method under a hydrogen atmosphere. The Ti8O15 NWs exhibit an outstanding electrical conductivity at room temperature. The electrical conductivity of a single Ti8O15 nanowire is 20.6 S cm-1 at 300 K. Theoretical calculations manifest that the existence of a large number of oxygen vacancies changes the band structure, resulting in the reduction of the electronic resistance. The Magnéli phase Ti8O15 nanowires have been used as conductive carbon-free supports to load Pt nanoparticles for direct methanol oxidation reaction (MOR). The Pt/Ti8O15 NWs show an enhanced activity and extremely high durability compared with commercial Pt/C catalysts.The Magnéli phase Ti8O15 nanowires (NWs) have been grown directly on a Ti substrate by a facile one-step evaporation-deposition synthesis method under a hydrogen atmosphere. The Ti8O15 NWs exhibit an outstanding electrical conductivity at room temperature. The electrical conductivity of a single Ti8O15 nanowire is 20.6 S cm-1 at 300 K. Theoretical calculations manifest that the existence of a large number of oxygen vacancies changes the band structure, resulting in the reduction of the electronic resistance. The Magnéli phase Ti8O15 nanowires have been used as conductive carbon-free supports to load Pt nanoparticles for direct methanol oxidation reaction (MOR). The Pt/Ti8O15 NWs show an enhanced activity and extremely high durability compared with commercial Pt/C catalysts. Electronic supplementary information (ESI) available: Additional data for the characterization and experimental details see DOI: 10.1039/c4nr05806b
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Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires
Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen
2018-05-01
The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.
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Development of N-layer materials for SNS junction and SQUID applications
International Nuclear Information System (INIS)
Zhou, J.P.; McDevitt, J.T.; Jia, Q.
1997-01-01
Materials characteristics including water reactivity, oxygen loss, electromigration of oxide ions, and interfacial reactivity problems have plagued attempts to produce reliable and reproducible cuprate SNS superconductor junctions. In an effort to solve some of these formidable problems, new N-layer compounds from the family of R 1-x Ca x Ba 2-y La y Cu 3-z M z O 7-δ (R = Y, Gd and Pr; M = Co, Ni and Zn; 0 2 Cu 3 O 7-δ phase and the modified materials exhibit enhanced durability properties. The compounds have been utilized to make both SNS junctions and SQUID devices
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SNS Central Helium Liquefier spare Carbon Bed installation and commissioning
Energy Technology Data Exchange (ETDEWEB)
Degraff, Brian D. [ORNL; Howell, Matthew P. [ORNL; Kim, Sang-Ho [ORNL; Neustadt, Thomas S. [ORNL
2017-07-01
The Spallation Neutron Source (SNS) Central Helium Liquefier (CHL) at Oak Ridge National Laboratory (ORNL) has been without major operations downtime since operations were started back in 2006. This system utilizes a vessel filled with activated carbon as the final major component to remove oil vapor from the compressed helium circuit prior to insertion into the system's cryogenic cold box. The need for a spare carbon bed at SNS due to the variability of carbon media lifetime calculation to adsorption efficiency will be discussed. The fabrication, installation and commissioning of this spare carbon vessel will be presented. The novel plan for connecting the spare carbon vessel piping to the existing infrastructure will be presented.
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Electrodeposition of textured Bi27Sb28Te45 nanowires with enhanced electrical conductivity
International Nuclear Information System (INIS)
Hasan, Maksudul; Gautam, Devendraprakash; Enright, Ryan
2016-01-01
This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi 1-x Sb x ) 2 Te 3 nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi 27 Sb 28 Te 45 nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10 4 S m −1 ) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi 1-x Sb x ) 2 Te 3 nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.
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Implementation of SNS Model for Intrusion Prevention in Wireless Local Area Network
DEFF Research Database (Denmark)
Isah, Abdullahi
The thesis has proposed and implemented a so-called SNS (Social network security) model for intrusion prevention in the Wireless Local Area Network of an organization. An experimental design was used to implement and test the model at a university in Nigeria.......The thesis has proposed and implemented a so-called SNS (Social network security) model for intrusion prevention in the Wireless Local Area Network of an organization. An experimental design was used to implement and test the model at a university in Nigeria....
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Forbes, David
2015-01-01
Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).
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DEFF Research Database (Denmark)
Geng, Junfeng; Solov'yov, Ilia; Reid, David G.
2010-01-01
Large-scale practical applications of fullerene (C_60) in nanodevices could be significantly facilitated if the commercially available micrometer-scale raw C_60 powder were further processed into a one-dimensional nanowire-related polymer displaying covalent bonding as molecular interlinks...... chromatography, mass spectrometry and ^13C nuclear magnetic resonance evidence is provided for the nature of the covalent bonding mode adopted by the polymeric chains. Theoretical analysis based on detailed calculations of the reaction energetics and structural analysis provides an in-depth understanding...
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Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi
2018-03-01
Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.
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International Nuclear Information System (INIS)
Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.
2010-01-01
In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).
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IMPACT simulation and the SNS linac beam
International Nuclear Information System (INIS)
Zhang, Y.; Qiang, J.
2008-01-01
Multi-particle tracking simulations for the SNS linac beam dynamics studies are performed with the IMPACT code. Beam measurement results are compared with the computer simulations, including beam longitudinal halo and beam losses in the superconducting linac, transverse beam Courant-Snyder parameters and the longitudinal beam emittance in the linac. In most cases, the simulations show good agreement with the measured results
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SNS RING STUDY AT THE AGS BOOSTER.
Energy Technology Data Exchange (ETDEWEB)
ZHANG, S.Y.; AHRENS, L.; BEEBE-WANG, J.; BLASKIEWICZ, M.; FEDOTOV, A.; GARDNER, C.; LEE, Y.Y.; LUCCIO, A.; MALITSKY, N.; ROSER, T.; WENG, W.T.; WEI, J.; ZENO, K.; REECE, K.; WANG, J.G.
2000-06-30
During the g-2 run at the BNL AGS in early 2000, a 200 MeV storage-ring-like magnetic cycle has been set-up and tuned at the Booster in preparing for the Spallation Neutron Source (SNS) accumulator ring study. In this article, we report the progress of the machine set-up, tuning, some preliminary studies, and the future plan.
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Lian, Qingwang; Zhou, Gang; Liu, Jiatu; Wu, Chen; Wei, Weifeng; Chen, Libao; Li, Chengchao
2017-10-01
Here, we report a new enhanced extrinsic pseudocapacitve Li-ion storage mechanism via lithiation-induced structural optimization strategy. The flower-like C@SnS and bulk SnS exhibit initial capacity decay and subsequent increase of capacity on cycling. After a long-term lithiation/delithiation process, flower-like C@SnS and bulk SnS exhibit improved rate performance and reversible capacity in comparison with those of initial state. Moreover, a high capacity of 530 mAh g-1 is still remained even after 1550 cycles at a high current density of 5.0 A g-1 for flower-like C@SnS after pre-lithiation of 350 cycles. According to the comprehensive analysis of structural evolution and electrochemical performance, it demonstrates that SnS electrodes experience crystal size reduction and further amorphization on cycling, which enhances the reversibility of conversion reaction for SnS, leading to increasing capacity. On the other hand, surface-dominated extrinsic pseudocapacitive contribution results in enhanced rate performance because electrodes expose a large fraction of Li+ sites on surface or near-surface region with structural optimization on cycling. This study reveals that extrinsic pseudocapacitance of SnS can be stimulated via lithiation-induced structural optimization, which gives rise to high-rate and long-lived performances.
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Energy Technology Data Exchange (ETDEWEB)
Jung, Juneui; Myoung, Jihyun; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr
2012-06-30
Determination of the effects of ZnO nanowires on the efficiency of ZnO nanowire-based dye-sensitized solar cells (DSSCs) is important. In this study, we determined the effects of different OH{sup -} precursors, concentrations, the ratio of zinc nitrate to hexamethylene tetramine (HMT), and the hydrothermal synthesis temperature on the physical, crystal, and optical properties of ZnO nanowires and investigated the performance of the resulting DSSCs. We observed that ZnO nanowires synthesized using an equimolar ratio of HMT to zinc nitrate yielded a DSSC with high incident photon-to-current efficiency (IPCE), cell efficiency, short circuit current density (J{sub sc}), and fill factor (FF), and low ZnO-dye-electrolyte interface resistance due to an increased amount of dye and a decreased density of defects. Furthermore, ZnO nanowires made using optimal concentrations and ratios of zinc nitrate to HMT had a high surface area and low defect density. All the photovoltaic performance parameters of DSSCs assessed such as IPCE, cell efficiency, J{sub sc}, open circuit potential (V{sub oc}), and FF increased with synthesis temperature, which was related to a decrease in the resistance at the ZnO-dye-electrolyte interface. We attributed these results to an increased amount of dye facilitated by a large nanowire surface area and fast electron transfer because of the improved crystalline structure of the ZnO nanowires and their low defect density. By optimizing the ZnO nanowires, we increased DSSC efficiency to 0.26% using ZnO nanowires synthesized with 25 mM of both zinc nitrate and HMT at 90 Degree-Sign C, while only a 0.02% increase in efficiency was obtained when NH{sub 4}OH was used as OH{sup -} precursor. - Highlights: Black-Right-Pointing-Pointer Fabrication of ZnO nanowire-based dye-sensitized solar cells (DSSCs) Black-Right-Pointing-Pointer Correlation of synthesis parameters with ZnO nanowires' properties and DSSC performance Black
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Nanowire Growth for Photovoltaics
DEFF Research Database (Denmark)
Holm, Jeppe Vilstrup
Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...
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Effect of van der Waals interaction on the properties of SnS2 layered semiconductor
International Nuclear Information System (INIS)
Seminovski, Y.; Palacios, P.; Wahnón, P.
2013-01-01
Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS 2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS 2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included. - Highlights: ► Tin disulphide (SnS 2 ) has been calculated using density functional theory methods. ► A dispersion correction was also applied for two different SnS 2 polytypes. ► Geometrical parameters and band-gaps were obtained using both approaches. ► Our calculations give a good agreement of the computed band gap with experiment
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Status of the SNS H- ion source and low-energy beam transport system
International Nuclear Information System (INIS)
Keller, R.; Thomae, R.; Stockli, M.; Welton, R.
2002-01-01
The ion source and Low-Energy Transport (LEBT) system that will provide H - ion beams to the Spallation Neutron Source (SNS) Front End and the accelerator chain have been developed into a mature unit that will satisfy the operational needs through the commissioning and early operating phases of SNS. The ion source was derived from the SSC ion source, and many of its original features have been improved to achieve reliable operation at 6% duty factor, producing beam currents in the 35-mA range and above. The LEBT utilizes purely electrostatic focusing and includes static beam-steering elements and a pre-chopper. This paper will discuss the latest design features of the ion source and LEBT, give performance data for the integrated system, and report on relevant commissioning results obtained with the SNS RFQ accelerator. Perspectives for further improvements will be outlined in concluding remarks
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DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS
International Nuclear Information System (INIS)
HE, P.; HSEUH, H.C.; MAPES, M.; TODD, R.; WEISS, D.
2001-01-01
The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ∼100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent results were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented
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Ferrite measurements for SNS accelerating cavities
International Nuclear Information System (INIS)
Bendall, R.G.; Church, R.A.
1979-03-01
The RF system for the SNS has six double accelerating cavities each containing seventy ferrite toroids. Difficulties experienced in obtaining toroids to the required specifications are discussed and the two toroid test cavity built to test those supplied is described. Ferrite measurements are reported which were undertaken to measure; (a) μQf as a function of frequency and RF field level and (b) bias current as a function of frequency for different ranges of ferrite permeability μ. (U.K.)
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Topological insulator nanowires and nanowire hetero-junctions
Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia
2014-03-01
The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.
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Zhang, Lizhi; Yu, Jimmy C; Xu, An-Wu; Li, Quan; Kwong, Kwan Wai; Wu, Ling
2003-12-07
Single crystalline lithium manganese oxide nanobelts were obtained through a self-seeded, surfactant-directed growth process from the commercial bulky particles under hydrothermal treatment. A possible mechanism was proposed to explain the growth of the nanobelts. This new process could be extended to prepare other one-dimensional nanomaterials such as Se nanorods, Te nanotubes, and MnO2 nanowires.
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Fabrication of multilayer nanowires
Energy Technology Data Exchange (ETDEWEB)
Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)
2016-05-06
Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.
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Fabrication of multilayer nanowires
International Nuclear Information System (INIS)
Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder
2016-01-01
Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.
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TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating
Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi
2017-12-01
Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.
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FANG, CM; ETTEMA, ARHF; HAAS, C; WIEGERS, GA; VANLEUKEN, H; DEGROOT, RA
1995-01-01
In order to understand the electronic structure of the misfit-layer compound (SnS)(1.17)NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)(1.20)NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with
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Moderator poison design and burn-up calculations at the SNS
International Nuclear Information System (INIS)
Lu, W.; Ferguson, P.D.; Iverson, E.B.; Gallmeier, F.X.; Popova, I.
2008-01-01
The spallation neutron source (SNS) at Oak Ridge National Laboratory was commissioned in April 2006. At the nominal operating power (1.4 MW), it will have thermal neutron fluxes approximately an order of magnitude greater than any existing pulsed spallation source. It thus brings a serious challenge to the lifetime of the moderator poison sheets. The SNS moderators are integrated with the inner reflector plug (IRP) at a cost of ∼$2 million a piece. A replacement of the inner reflector plug presents a significant drawback to the facility due to the activation and the operation cost. Although there are a lot of factors limiting the lifetime of the inner reflector plug, like radiation damage to the structural material and helium production of beryllium, the bottle-neck is the lifetime of the moderator poison sheets. Increasing the thickness of the poison sheet extends the lifetime but would sacrifice the neutronic performance of the moderators. A compromise is accepted at the current SNS target system which uses thick Gd poison sheets at a projected lifetime of 6 MW-years of operation. The calculations in this paper reveal that Cd may be a better poison material from the perspective of lifetime and neutronic performance. In replacing Gd, the inner reflector plug could reach a lifetime of 8 MW-years with ∼5% higher peak neutron fluxes at almost no loss of energy resolution
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International Nuclear Information System (INIS)
Messaoudi, O.; Makhlouf, H.; Souissi, A.; Ben assaker, I.; Amiri, G.; Bardaoui, A.; Oueslati, M.; Bechelany, M.; Chtourou, R.
2015-01-01
Highlights: • ZnO/Cu 2 O core/shell nanowires have been grown by two-step electrodeposition method. • SEM confirmed the homogenous distribution of Cu 2 O on the deposited nanowires. • The X-ray diffraction demonstrated that the films were pure. • Optical transmissions measurements reveal an additional contribution at about 1.7 eV. • The ZnO/Cu 2 O structure is expected to have an advantage in photovoltaic application. - Abstract: ZnO/Cu 2 O core/shell nanowires have been grown by two-step electrodeposition method on ITO-coated glass substrates. The sample's morphology was explored by means of scanning electron microscopy (SEM). SEM images confirm the homogeneity of the nanowires and the presence of Cu 2 O shell on ZnO core. X-ray diffraction and Raman scattering measurements were used to investigate the purity and the crystallinity of the samples. Optical transmission measurements reveal an additional contribution at about 1.7 eV attributed to the type-II interfacial transition witch confirms the advantage of using the ZnO/Cu 2 O structure in photovoltaic application
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Photocurrent Enhancement by a Rapid Thermal Treatment of Nanodisk-Shaped SnS Photocathodes.
Patel, Malkeshkumar; Kumar, Mohit; Kim, Joondong; Kim, Yu Kwon
2017-12-21
Photocathodes made from the earth-abundant, ecofriendly mineral tin monosulfide (SnS) can be promising candidates for p/n-type photoelectrochemical cells because they meet the strict requirements of energy band edges for each individual photoelectrode. Herein we fabricated SnS-based cell that exhibited a prolonged photocurrent for 3 h at -0.3 V vs the reversible hydrogen electrode (RHE) in a 0.1 M HCl electrolyte. An enhancement of the cathodic photocurrent from 2 to 6 mA cm -2 is observed through a rapid thermal treatment. Mott-Schottky analysis of SnS samples revealed an anodic shift of 0.7 V in the flat band potential under light illumination. Incident photon-to-current conversion efficiency (IPCE) analysis indicates that an efficient charge transfer appropriate for solar hydrogen generation occurs at the -0.3 V vs RHE potential. This work shows that SnS is a promising material for photocathode in PEC cells and its performance can be enhanced via simple postannealing.
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Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures
Energy Technology Data Exchange (ETDEWEB)
Heiss, Martin
2010-08-25
symmetry from cubic zinc-blende to hexagonal wurtzite structure, while the chemical composition of the material remains constant. The GaAs nanowires synthesized with the Au-free technique can be grown under conditions where a statistical wurtzite/zinc-blende polytypism occurs. A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is developed in order to characterize the resulting statistically distributed quantum heterostructures. Nanowires consisting of {approx}100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are studied by photoluminescence spectroscopy and Transmission Electron Microscopy. The photoluminescence of wurtzite GaAs is found to be consistent with a bulk wurtzite band gap of 1.50 eV, slightly smaller compared to the zinc-blende GaAs band gap. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the according bulk band gaps, while regions composed of a non periodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to estimate the band offsets of {delta}E{sub CB}=53{+-}20 meV and {delta}E{sub VB}=76{+-}12 meV between the two crystalline phases. These results are in excellent agreement with recent theoretical band structure calculations. (orig.)
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Magnetic behavior of NiCu nanowire arrays: Compositional, geometry and temperature dependence
International Nuclear Information System (INIS)
Palmero, E. M.; Bran, C.; Real, R. P. del; Vázquez, M.; Magén, C.
2014-01-01
Arrays of Ni 100−x Cu x nanowires ranging in composition 0 ≤ x ≤ 75, diameter from 35 to 80 nm, and length from 150 nm to 28 μm have been fabricated by electrochemical co-deposition of Ni and Cu into self-ordered anodic aluminum oxide membranes. As determined by X-ray diffraction and Transmission Electron Microscopy, the crystalline structure shows fcc cubic symmetry with [111] preferred texture and preferential Ni or Cu lattice depending on the composition. Their magnetic properties such as coercivity and squareness have been determined as a function of composition and geometry in a Vibrating Sample Magnetometer in the temperature range from 10 to 290 K for applied magnetic fields parallel and perpendicular to the nanowires axis. Addition of Cu into the NiCu alloy up to 50% enhances both parallel coercivity and squareness. For the higher Cu content, these properties decrease and the magnetization easy axis becomes oriented perpendicular to the wires. In addition, coercivity and squareness increase by decreasing the diameter of nanowires which is ascribed to the increase of shape anisotropy. The temperature dependent measurements reflect a complex behavior of the magnetic anisotropy as a result of energy contributions with different evolution with temperature.
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Electronic and magnetic properties of SnS2 monolayer doped with non-magnetic elements
Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Wang, Ling-Ling
2018-05-01
We performed a systematic study of the electronic structures and magnetic properties of SnS2 monolayer doped with non-magnetic elements in groups IA, IIA and IIIA based on the first-principles methods. The doped systems exhibit half-metallic and metallic natures depending on the doping elements. The formation of magnetic moment is attributable to the cooperative effect of the Hund's rule coupling and hole concentration. The spin polarization can be stabilized and enhanced through confining the delocalized impurity states by biaxial tensile strain in hole-doped SnS2 monolayer. Both the double-exchange and p-p exchange mechanisms are simultaneously responsible for the ferromagnetic ground state in those hole-doped materials. Our results demonstrate that spin polarization can be induced and controlled in SnS2 monolayers by non-magnetic doping and tensile strain.
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Topological Insulator Nanowires and Nanoribbons
Kong, Desheng
2010-01-13
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.
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Native oxide formation on pentagonal copper nanowires: A TEM study
Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian
2018-06-01
Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.
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The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition
International Nuclear Information System (INIS)
Wu, Tung-Hsien; Hong, Franklin Chau-Nan
2013-01-01
Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes
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SNS Diagnostics Tools for Data Acquisition and Display
Sundaram, Madhan; Long, Cary D
2005-01-01
The Spallation Neutron Source (SNS) accelerator systems will deliver a 1.0 GeV, 1.4 MW proton beam to a liquid mercury target for neutron scattering research. The accelerator complex consists of a 1.0 GeV linear accelerator, an accumulator ring and associated transport lines. The SNS diagnostics platform is PC-based and will run Windows for its OS and LabVIEW as its programming language. The diagnostics platform as well as other control systems and operator consoles use the Channel Access (CA) protocol of the Experimental Physics and Industrial Control System (EPICS) to communicate. This paper describes the tools created to evaluate the diagnostic instrument using our standard programming environment, LabVIEW. The tools are based on the LabVIEW Channel Access library and can run on Windows, Linux, and Mac OS X. The data-acquisition tool uses drop and drag to select process variables organized by instrument, accelerator component, or beam parameters. The data can be viewed on-line and logged to disk for later ...
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High Power RF Test Facility at the SNS
Kang, Yoon W; Campisi, Isidoro E; Champion, Mark; Crofford, Mark; Davis, Kirk; Drury, Michael A; Fuja, Ray E; Gurd, Pamela; Kasemir, Kay-Uwe; McCarthy, Michael P; Powers, Tom; Shajedul Hasan, S M; Stirbet, Mircea; Stout, Daniel; Tang, Johnny Y; Vassioutchenko, Alexandre V; Wezensky, Mark
2005-01-01
RF Test Facility has been completed in the SNS project at ORNL to support test and conditioning operation of RF subsystems and components. The system consists of two transmitters for two klystrons powered by a common high voltage pulsed converter modulator that can provide power to two independent RF systems. The waveguides are configured with WR2100 and WR1150 sizes for presently used frequencies: 402.5 MHz and 805 MHz. Both 402.5 MHz and 805 MHz systems have circulator protected klystrons that can be powered by the modulator capable of delivering 11 MW peak and 1 MW average power. The facility has been equipped with computer control for various RF processing and complete dual frequency operation. More than forty 805 MHz fundamental power couplers for the SNS superconducting linac (SCL) cavitites have been RF conditioned in this facility. The facility provides more than 1000 ft2 floor area for various test setups. The facility also has a shielded cave area that can support high power tests of normal conducti...
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Electrochemically grown rough-textured nanowires
International Nuclear Information System (INIS)
Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.
2010-01-01
Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.
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SNS AC Power Distribution and Reliability of AC Power Supply
Holik, Paul S
2005-01-01
The SNS Project has 45MW of installed power. A design description under the Construction Design and Maintenance (CDM) with regard to regulations (OSHA, NFPA, NEC), reliability issues and maintenance of the AC power distribution system are herewith presented. The SNS Project has 45MW of installed power. The Accelerator Systems are Front End (FE)and LINAC KLYSTRON Building (LK), Central Helium Liquefier (CHL), High Energy Beam Transport (HEBT), Accumulator Ring and Ring to Target Beam Transport (RTBT) Support Buildings have 30MW installed power. FELK has 16MW installed, majority of which is klystron and magnet power supply system. CHL, supporting the super conducting portion of the accelerator has 7MW installed power and the RING Systems (HEBT, RING and RTBT) have also 7MW installed power.*
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Directory of Open Access Journals (Sweden)
U Hyeok Choi
2017-10-01
Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.
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Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.
Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo
2013-09-01
We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.
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Energy Technology Data Exchange (ETDEWEB)
Tharsika, T., E-mail: tharsika@siswa.um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Akbar, S.A., E-mail: akbar.1@osu.edu [Center for Industrial Sensors and Measurements (CISM), Department of Materials Science and Engineering, Ohio State University, 2041 College Road, Columbus, OH 43210 (United States); Sabri, M.F.M., E-mail: faizul@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Wong, Y.H., E-mail: yhwong@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)
2015-01-05
Highlights: • Zn{sub 2}SnO{sub 4} nanowires are grown on Au/alumina substrate by a carbon assisted thermal evaporation process. • Optimum growth conditions for Zn{sub 2}SnO{sub 4} nanowires are determined. • Ethanol gas is selectively sensed with high sensitivity. - Abstract: Zn{sub 2}SnO{sub 4} nanowires are successfully synthesized by a carbon assisted thermal evaporation process with the help of a gold catalyst under ambient pressure. The as-synthesized nanowires are characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) equipped with an energy dispersive X-ray spectroscopy (EDS). The XRD patterns and elemental mapping via TEM–EDS clearly indicate that the nanowires are Zn{sub 2}SnO{sub 4} with face centered spinel structure. HRTEM image confirms that Zn{sub 2}SnO{sub 4} nanowires are single crystalline with an interplanar spacing of 0.26 nm, which is ascribed to the d-spacing of (3 1 1) planes of Zn{sub 2}SnO{sub 4}. The optimum processing condition and a possible formation mechanism of these Zn{sub 2}SnO{sub 4} nanowires are discussed. Additionally, sensor performance of Zn{sub 2}SnO{sub 4} nanowires based sensor is studied for various test gases such as ethanol, methane and hydrogen. The results reveal that Zn{sub 2}SnO{sub 4} nanowires exhibit excellent sensitivity and selectivity toward ethanol with quick response and recovery times. The response of the Zn{sub 2}SnO{sub 4} nanowires based sensors to 50 ppm ethanol at an optimum operating temperature of 500 °C is about 21.6 with response and recovery times of about 116 s and 182 s, respectively.
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X-ray characterization Si-doped InAs nanowires grown on GaAs
Energy Technology Data Exchange (ETDEWEB)
Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)
2011-07-01
Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.
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Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois
2017-08-09
Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.
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CORRECTION SYSTEMS UPGRADE FOR THE SNS RING
International Nuclear Information System (INIS)
PAPAPHILIPPOU, Y.; GARDNER, C.J.; LEE, Y.Y.; WEI, J.
2001-01-01
In view of the changes in the design of the SNS ring from the original FODO lattice [l] to the 220m hybrid lattice [2] and finally 1.3GeV compatible 248m ring [3], complementary studies have been undertaken, in order to upgrade its correction packages. We review the evolution of the correction systems and present the accelerator physics studies for the adopted schemes and powering plan
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Xu, Wangwang; Xie, Zhiqiang; Cui, Xiaodan; Zhao, Kangning; Zhang, Lei; Dietrich, Grant; Dooley, Kerry M; Wang, Ying
2015-10-14
Complex hierarchical structures have received tremendous attention due to their superior properties over their constitute components. In this study, hierarchical graphene-encapsulated hollow SnO2@SnS2 nanostructures are successfully prepared by in situ sulfuration on the backbones of hollow SnO2 spheres via a simple hydrothermal method followed by a solvothermal surface modification. The as-prepared hierarchical SnO2@SnS2@rGO nanocomposite can be used as anode material in lithium ion batteries, exhibiting excellent cyclability with a capacity of 583 mAh/g after 100 electrochemical cycles at a specific current of 200 mA/g. This material shows a very low capacity fading of only 0.273% per cycle from the second to the 100th cycle, lower than the capacity degradation of bare SnO2 hollow spheres (0.830%) and single SnS2 nanosheets (0.393%). Even after being cycled at a range of specific currents varied from 100 mA/g to 2000 mA/g, hierarchical SnO2@SnS2@rGO nanocomposites maintain a reversible capacity of 664 mAh/g, which is much higher than single SnS2 nanosheets (374 mAh/g) and bare SnO2 hollow spheres (177 mAh/g). Such significantly improved electrochemical performance can be attributed to the unique hierarchical hollow structure, which not only effectively alleviates the stress resulting from the lithiation/delithiation process and maintaining structural stability during cycling but also reduces aggregation and facilitates ion transport. This work thus demonstrates the great potential of hierarchical SnO2@SnS2@rGO nanocomposites for applications as a high-performance anode material in next-generation lithium ion battery technology.
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Tensile behavior of Cu50Zr50 metallic glass nanowire with a B2 crystalline precipitate
Sepulveda-Macias, Matias; Amigo, Nicolas; Gutierrez, Gonzalo
2018-02-01
A molecular dynamics study of the effect of a single B2-CuZr precipitate on the mechanical properties of Cu50Zr50 metallic glass nanowires is presented. Four different samples are considered: three with a 2, 4 and 6 nm radii precipitate and a precipitate-free sample. These systems are submitted to uniaxial tensile test up to 25% of strain. The interface region between the precipitate and the glass matrix has high local atomic shear strain, activating shear transformation zones, which concentrates in the neighborhood of the precipitate. The plastic regime is dominated by necking, and no localized shear band is observed for the samples with a 4 and 6 nm radii precipitate. In addition, the yield stress decreases as the size of the precipitate increases. Regarding the precipitate structure, no martensitic phase transformation is observed, since neither the shear band hit the precipitate nor the stress provided by the tensile test is enough to initiate the transformation. It is concluded that, in contrast to the case when multiple precipitates are present in the sample, a single precipitate concentrates the shear strain around its surface, eventually causing the failure of the nanowire.
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The Spallation Neutron Source (SNS) conceptual design shielding analysis
International Nuclear Information System (INIS)
Johnson, J.O.; Odano, N.; Lillie, R.A.
1998-03-01
The shielding design is important for the construction of an intense high-energy accelerator facility like the proposed Spallation Neutron Source (SNS) due to its impact on conventional facility design, maintenance operations, and since the cost for the radiation shielding shares a considerable part of the total facility costs. A calculational strategy utilizing coupled high energy Monte Carlo calculations and multi-dimensional discrete ordinates calculations, along with semi-empirical calculations, was implemented to perform the conceptual design shielding assessment of the proposed SNS. Biological shields have been designed and assessed for the proton beam transport system and associated beam dumps, the target station, and the target service cell and general remote maintenance cell. Shielding requirements have been assessed with respect to weight, space, and dose-rate constraints for operating, shutdown, and accident conditions. A discussion of the proposed facility design, conceptual design shielding requirements calculational strategy, source terms, preliminary results and conclusions, and recommendations for additional analyses are presented
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Higher order mode analysis of the SNS superconducting linac
Sang Ho Kim; Dong Jeon; Sundelin, R
2001-01-01
Higher order modes (HOM's) of monopoles, dipoles, quadrupoles and sextupoles in beta =0.61 and beta =0.81 6-cell superconducting (SC) cavities for the Spallation Neutron Source (SNS) project, have been found up to about 3 GHz and their properties such as R/Q, trapping possibility, etc have been figured out concerning manufacturing imperfection. The main issues of HOM's are beam instabilities (published separately) and HOM induced power especially from TM monopoles. The time structure of SNS beam has three different time scales of pulses, which are micro-pulse, midi-pulse and macropulse. Each time structure will generate resonances. When a mode is near these resonance frequencies, the induced voltage could be large and accordingly the resulting HOM power. In order to understand the effects from such a complex beam time structure on the mode excitation and resulting HOM power, analytic expressions are developed. With these analytic expressions, the induced HOM voltage and HOM power were calculated by assuming e...
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Energy Technology Data Exchange (ETDEWEB)
Messaoudi, O., E-mail: olfamassaoudi@gmail.com [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammam Lif, 2050 (Tunisia); Makhlouf, H.; Souissi, A.; Ben assaker, I. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammam Lif, 2050 (Tunisia); Amiri, G. [Groupe d’Etude de la Matière Condensée, CNRS Université de Versailles Saint Quentin (France); Bardaoui, A. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammam Lif, 2050 (Tunisia); Physics Department, Taif University (Saudi Arabia); Oueslati, M. [Unité Nanomatériaux et Photonique, Faculté Des Sciences de Tunis, Campus Universitaire El Manar, 2092, Tunis (Tunisia); Bechelany, M. [European Institute of Membranes (IEM ENSCM UM2 CNRS UMR 5635), University of Montpellier 2, 34095 Montpellier (France); Chtourou, R. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammam Lif, 2050 (Tunisia)
2015-07-15
Highlights: • ZnO/Cu{sub 2}O core/shell nanowires have been grown by two-step electrodeposition method. • SEM confirmed the homogenous distribution of Cu{sub 2}O on the deposited nanowires. • The X-ray diffraction demonstrated that the films were pure. • Optical transmissions measurements reveal an additional contribution at about 1.7 eV. • The ZnO/Cu{sub 2}O structure is expected to have an advantage in photovoltaic application. - Abstract: ZnO/Cu{sub 2}O core/shell nanowires have been grown by two-step electrodeposition method on ITO-coated glass substrates. The sample's morphology was explored by means of scanning electron microscopy (SEM). SEM images confirm the homogeneity of the nanowires and the presence of Cu{sub 2}O shell on ZnO core. X-ray diffraction and Raman scattering measurements were used to investigate the purity and the crystallinity of the samples. Optical transmission measurements reveal an additional contribution at about 1.7 eV attributed to the type-II interfacial transition witch confirms the advantage of using the ZnO/Cu{sub 2}O structure in photovoltaic application.
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A facile inexpensive route for SnS thin film solar cells with SnS{sub 2} buffer
Energy Technology Data Exchange (ETDEWEB)
Gedi, Sreedevi [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Minna Reddy, Vasudeva Reddy, E-mail: drmvasudr9@gmail.com [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Pejjai, Babu [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Jeon, Chan-Wook [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Park, Chinho, E-mail: chpark@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Ramakrishna Reddy, K.T., E-mail: ktrkreddy@gmail.com [Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India)
2016-05-30
Graphical abstract: PYS spectra of SnS/SnS{sub 2} interface and the related band diagram. - Highlights: • A low cost SnS solar cell is developed using chemical bath deposition. • We found E{sub I} & χ of SnS (5.3 eV & 4.0 eV) and SnS{sub 2} (6.9 eV & 4.1 eV) films from PYS. • Band offsets of 0.1 eV (E{sub c}) and 1.6 eV (E{sub v}) are estimated for SnS/SnS{sub 2} junction. • SnS based solar cell showed a conversion efficiency of 0.51%. - Abstract: Environment-friendly SnS based thin film solar cells with SnS{sub 2} as buffer layer were successfully fabricated from a facile inexpensive route, chemical bath deposition (CBD). Layer studies revealed that as-grown SnS and SnS{sub 2} films were polycrystalline; (1 1 1)/(0 0 1) peaks as the preferred orientation; 1.3 eV/2.8 eV as optical band gaps; and showed homogeneous microstructure with densely packed grains respectively. Ionization energy and electron affinity values were found by applying photoemission yield spectroscopy (PYS) to the CBD deposited SnS and SnS{sub 2} films for the first time. These values obtained as 5.3 eV and 4.0 eV for SnS films; 6.9 eV and 4.1 eV for SnS{sub 2} films. The band alignment of SnS/SnS{sub 2} junction showed TYPE-II heterostructure. The estimated conduction and valance band offsets were 0.1 eV and 1.6 eV respectively. The current density–voltage (J–V) measurements of the cell showed open circuit voltage (V{sub oc}) of 0.12 V, short circuit current density (J{sub sc}) of 10.87 mA cm{sup −2}, fill factor (FF) of 39% and conversion efficiency of 0.51%.
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From nanodiamond to nanowires.
Energy Technology Data Exchange (ETDEWEB)
Barnard, A.; Materials Science Division
2005-01-01
Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.
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Li, Xiang; Liu, Jiangwen; Ouyang, Liuzhang; Yuan, Bin; Yang, Lichun; Zhu, Min
2018-04-01
Carbon coated SnS microplates (SnS@C MPs) were prepared via a facile chemical vapor deposition method using SnS2 nanoflakes as precursor and ethanol vapor as carbon source. The carbon coating restrains the growth of SnS during the heat treatment. Furthermore, it improves the electronic conductivity as well as accommodates volume variations of SnS during the sodiation and desodiation processes. Therefore, the rate capability and cycle performance of the SnS@C MPs as anode materials for sodium-ion batteries are remarkably enhanced compared with the bare SnS and the SnS2 precursor. At current densities of 0.1, 0.2, 0.5, 1 and 2 A g-1, the optimized SnS@C MPs exhibit stable capacities of 602.9, 532.1, 512.2, 465.9 and 427.2 mAh g-1, respectively. At 1 A g-1, they show a reversible capacity of 528.8 mAh g-1 in the first cycle, and maintain 444.7 mAh g-1 after 50 cycles, with capacity retention of 84.1%. The carbon coating through chemical vapor deposition using ethanol vapor as carbon sources is green, simple and cost-effective, which shows great promise to improve the reversible Na+ storage of electrode materials.
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Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T
2018-05-09
III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.
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Hard X-ray Full Field Nano-imaging of Bone and Nanowires at SSRL
International Nuclear Information System (INIS)
Andrews, Joy C.; Pianetta, Piero; Meirer, Florian; Chen Jie; Almeida, Eduardo; Meulen, Marjolein C. H. van der; Alwood, Joshua S.; Lee, Cathy; Zhu Jia; Cui Yi
2010-01-01
A hard X-ray full field microscope from Xradia Inc. has been installed at SSRL on a 54-pole wiggler end station at beam line 6-2. It has been optimized to operate from 5-14 keV with resolution as high as 30 nm. High quality images are achieved using a vertical beam stabilizer and condenser scanner with high efficiency zone plates with 30 nm outermost zone width. The microscope has been used in Zernike phase contrast, available at 5.4 keV and 8 keV, as well as absorption contrast to image a variety of biological, environmental and materials samples. Calibration of the X-ray attenuation with crystalline apatite enabled quantification of bone density of plate-like and rod-like regions of mouse bone trabecula. 3D tomography of individual lacuna revealed the surrounding cell canaliculi and processes. 3D tomography of chiral branched PbSe nanowires showed orthogonal branches around a central nanowire.
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Hard X-ray Full Field Nano-imaging of Bone and Nanowires at SSRL.
Andrews, Joy C; Pianetta, Piero; Meirer, Florian; Chen, Jie; Almeida, Eduardo; van der Meulen, Marjolein C H; Alwood, Joshua S; Lee, Cathy; Zhu, Jia; Cui, Yi
2010-06-23
A hard X-ray full field microscope from Xradia Inc. has been installed at SSRL on a 54-pole wiggler end station at beam line 6-2. It has been optimized to operate from 5-14 keV with resolution as high as 30 nm. High quality images are achieved using a vertical beam stabilizer and condenser scanner with high efficiency zone plates with 30 nm outermost zone width. The microscope has been used in Zernike phase contrast, available at 5.4 keV and 8 keV, as well as absorption contrast to image a variety of biological, environmental and materials samples. Calibration of the X-ray attenuation with crystalline apatite enabled quantification of bone density of plate-like and rod-like regions of mouse bone trabecula. 3D tomography of individual lacuna revealed the surrounding cell canaliculi and processes. 3D tomography of chiral branched PbSe nanowires showed orthogonal branches around a central nanowire.
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Hard X-ray Full Field Nano-imaging of Bone and Nanowires at SSRL
Andrews, Joy C.; Pianetta, Piero; Meirer, Florian; Chen, Jie; Almeida, Eduardo; van der Meulen, Marjolein C. H.; Alwood, Joshua S.; Lee, Cathy; Zhu, Jia; Cui, Yi
2010-06-01
A hard X-ray full field microscope from Xradia Inc. has been installed at SSRL on a 54-pole wiggler end station at beam line 6-2. It has been optimized to operate from 5-14 keV with resolution as high as 30 nm. High quality images are achieved using a vertical beam stabilizer and condenser scanner with high efficiency zone plates with 30 nm outermost zone width. The microscope has been used in Zernike phase contrast, available at 5.4 keV and 8 keV, as well as absorption contrast to image a variety of biological, environmental and materials samples. Calibration of the X-ray attenuation with crystalline apatite enabled quantification of bone density of plate-like and rod-like regions of mouse bone trabecula. 3D tomography of individual lacuna revealed the surrounding cell canaliculi and processes. 3D tomography of chiral branched PbSe nanowires showed orthogonal branches around a central nanowire.
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Energy Technology Data Exchange (ETDEWEB)
Hasan, Maksudul, E-mail: maksudul.hasan@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Gautam, Devendraprakash [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Enright, Ryan [Thermal Management Research Group, Efficient Energy Transfer Department, Bell Labs Ireland, Alcatel-Lucent Ireland Ltd., Dublin (Ireland)
2016-04-15
This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10{sup 4} S m{sup −1}) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.
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Quantum optics with nanowires (Conference Presentation)
Zwiller, Val
2017-02-01
Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.
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Spallation Neutron Source SNS Diamond Stripper Foil Development
International Nuclear Information System (INIS)
Shaw, Robert W.; Plum, Michael A.; Wilson, Leslie L.; Feigerle, Charles S.; Borden, Michael J.; Irie, Y.; Sugai, I.; Takagi, A.
2007-01-01
Diamond stripping foils are under development for the SNS. Freestanding, flat 300 to 500 (micro)g/cm 2 foils as large as 17 x 25 mm 2 have been prepared. These nano-textured polycrystalline foils are grown by microwave plasma-assisted chemical vapor deposition in a corrugated format to maintain their flatness. They are mechanically supported on a single edge by a residual portion of their silicon growth substrate; fine foil supporting wires are not required for diamond foils. Six foils were mounted on the SNS foil changer in early 2006 and have performed well in commissioning experiments at reduced operating power. A diamond foil was used during a recent experiment where 15 (micro)C of protons, approximately 64% of the design value, were stored in the ring. A few diamond foils have been tested at LANSCE/PSR, where one foil was in service for a period of five months (820 C of integrated injected charge) before it was replaced. Diamond foils have also been tested in Japan at KEK (640 keV H - ) where their lifetimes slightly surpassed those of evaporated carbon foils, but fell short of those for Sugai's new hybrid boron carbon (HBC) foils.
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Fang, C.M.; Ettema, A.R.H.F.; Haas, C.; Wiegers, G.A.; Leuken, H. van; Groot, R.A. de
1995-01-01
In order to understand the electronic structure of the misfit-layer compound (SnS)1.17NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)1.20NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with
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TRACKING TESTS FOR THE SNS FAST INJECTION BUMP POWER SUPPLY
International Nuclear Information System (INIS)
ENG, W.; CUTLER, R.; DEWAN, S.
2004-01-01
The tracking requirement of the SNS Fast Injection Bump power supplies is described. In addition to the usual tracking between the load current and the input reference of a power supply, these power supplies must also track between pairs of units under slightly different loads. This paper describes the use of a current-null test to measure tracking performances. For the actual tests, a single dummy magnet load was used to measure the tracking between the first two production units at the manufacturer's facility. Using the Yokogawa WE7000 waveform. PC-based measurement instrument, input and output waveforms are digitized and stored in data files. A program written for this application is then used to extract data from these files to construct, analyze the waveforms and characterize the power supply performance. Results of the measurements of two SNS Fast Injection Bump power supplies will be presented in this paper
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Attosecond-controlled photoemission from metal nanowire tips in the few-electron regime
Ahn, B.
2017-02-07
Metal nanotip photoemitters have proven to be versatile in fundamental nanoplasmonics research and applications, including, e.g., the generation of ultrafast electron pulses, the adiabatic focusing of plasmons, and as light-triggered electron sources for microscopy. Here, we report the generation of high energy photoelectrons (up to 160 eV) in photoemission from single-crystalline nanowire tips in few-cycle, 750-nm laser fields at peak intensities of (2-7.3) × 1012 W/cm2. Recording the carrier-envelope phase (CEP)-dependent photoemission from the nanowire tips allows us to identify rescattering contributions and also permits us to determine the high-energy cutoff of the electron spectra as a function of laser intensity. So far these types of experiments from metal nanotips have been limited to an emission regime with less than one electron per pulse. We detect up to 13 e/shot and given the limited detection efficiency, we expect up to a few ten times more electrons being emitted from the nanowire. Within the investigated intensity range, we find linear scaling of cutoff energies. The nonlinear scaling of electron count rates is consistent with tunneling photoemission occurring in the absence of significant charge interaction. The high electron energy gain is attributed to field-induced rescattering in the enhanced nanolocalized fields at the wires apex, where a strong CEP-modulation is indicative of the attosecond control of photoemission.
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International Nuclear Information System (INIS)
Gao, Xiaomin; Huang, Guanbo; Gao, Haihuan; Pan, Cheng; Wang, Huan; Yan, Jing; Liu, Yu; Qiu, Haixia; Ma, Ning; Gao, Jianping
2016-01-01
In this work, Bi_2S_3/SnS_2 heterojunction photocatalysts were prepared by combining a hydrothermal technique and a facile in situ growth method. The nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, inductively coupled plasma spectroscopy, X-ray photoelectron spectroscopy, UV–Vis diffusion reflectance spectroscopy and room-temperature photoluminescence spectra. Their photocatalytic performances were evaluated by degrading methyl orange (MO) in aqueous solution (50 mg/L) under visible light (λ > 420 nm) irradiation. It was found that when the mass percentage of Bi_2S_3 in Bi_2S_3/SnS_2 was 7.95 wt%, the as-prepared Bi_2S_3/SnS_2 nanocomposite showed the best photocatalytic activity for the degradation of MO. The highly improved performance of the Bi_2S_3/SnS_2 nanocomposite was mainly ascribed to the efficient charge separation. - Highlights: • Facile fabrication of novel Bi_2S_3/SnS_2 heterojunction photocatalysts. • High-performance photocatalyst for the degradation of organic pollutants. • Good recyclability of catalyst without photo-corrosion. • The photocatalytic mechanism was proposed.
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Energy Technology Data Exchange (ETDEWEB)
Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)
2016-05-16
We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.
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Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman
2016-05-01
We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.
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SnS2 nanosheets arrays sandwiched by N-doped carbon and TiO2 for high-performance Na-ion storage
Directory of Open Access Journals (Sweden)
Weina Ren
2018-01-01
Full Text Available In this paper, SnS2 nanosheets arrays sandwiched by porous N-doped carbon and TiO2 (TiO2@SnS2@N-C on flexible carbon cloth are prepared and tested as a free-standing anode for high-performance sodium ion batteries. The as-obtained TiO2@SnS2@N-C composite delivers a remarkable capacity performance (840 mA h g−1 at a current density of 200 mA g−1, excellent rate capability and long-cycling life stability (293 mA h g−1 at 1 A g−1 after 600 cycles. The excellent electrochemical performance can be attributed to the synergistic effect of each component of the unique hybrid structure, in which the SnS2 nanosheets with open framworks offer high capacity, while the porous N-doped carbon nanoplates arrays on flexible carbon cloth are able to improve the conductivity and the TiO2 passivation layer can keep the structure integrity of SnS2 nanosheets.
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Wavefunction and energy of the 1s22sns configuration in a beryllium atom
International Nuclear Information System (INIS)
Huang Shizhong; Ma Kun; Yu Jiaming; Liu Fen
2008-01-01
A new set of trial functions for 1s 2 2sns configurations in a beryllium atom is suggested. A Mathematica program based on the variational method is developed to calculate the wavefunctions and energies of 1s 2 2sns (n = 3–6) configurations in a beryllium atom. Non-relativistic energy, polarization correction and relativistic correction which include mass correction, one-and two-body Darwin corrections, spin-spin contact interaction and orbit-orbit interaction, are calculated respectively. The results are in good agreement with experimental data. (atomic and molecular physics)
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A silicon nanowire heater and thermometer
Zhao, Xingyan; Dan, Yaping
2017-07-01
In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.
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Maijenburg, A. Wouter; Rodijk, Eddy J.B.; Maas, Michiel G.; ten Elshof, Johan E.
2014-01-01
Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 µm were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution. PMID:24837535
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DESIGN OF BEAM-EXTRACTION SEPTUM MAGNET FOR THE SNS
International Nuclear Information System (INIS)
TSOUPAS, N.; LEE, Y.Y.; RANK, J.; TUOZZOLO, J.
2001-01-01
The beam-extraction process from the SNS accumulator ring [1,2] requires a Lambertson septum magnet. In this paper we discuss the geometrical and magnetic field requirements of the magnet and present results obtained from two and three dimensional magnetic field calculations that shows the field quality in the regions of interest of the septum magnet
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Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire
Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.
2017-08-01
The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.
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2013-01-01
Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343
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Synthesis and characterization of electrodeposited SnS films
International Nuclear Information System (INIS)
Jim, W. Y.; Sun, Y. C.; Djurišić, A. B.; Chan, W. K.
2013-01-01
Here we systematically investigated the effect of solution concentration and growth temperature on the properties of SnS thin films. The properties of deposited films were investigated by scanning electron microscopy and energy dispersive X-ray spectroscopy. We found that sample quality is strongly affected by deposition conditions and that the sample composition exhibits strong temperature dependence. Detailed discussion of material properties dependence on the growth conditions is given
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Directory of Open Access Journals (Sweden)
M. Marus
2018-03-01
Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.
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Carbon dots decorated vertical SnS_2 nanosheets for efficient photocatalytic oxygen evolution
International Nuclear Information System (INIS)
Cheng, Zhongzhou; Wang, Fengmei; Shifa, Tofik Ahmed; Liu, Kaili; Huang, Yun; Jiang, Chao; He, Jun; Liu, Quanlin
2016-01-01
Metal sulfides are highly desirable materials for photocatalytic water splitting because of their appropriate energy bands. However, the poor stability under light illumination in water hinders their wide applications. Here, two-dimensional SnS_2 nanosheets, along with carbon dots of the size around 10 nm, are uniformly grown on fluorine doped tin oxide glasses with a layer of nickel nanoparticles. Significantly, strong light absorption and enhanced photocurrent density are achieved after integration of SnS_2 nanosheets with carbon dots. Notably, the rate of oxygen evolution reached up to 1.1 mmol g"−"1 h"−"1 under simulated sunlight irradiation featuring a good stability.
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Lessons Learned from the Jefferson Lab - SNS Cryomodule Production Run
International Nuclear Information System (INIS)
John Hogan; Edward Daly; John Fischer; Joseph Preble
2005-01-01
In light of the recent developments with the International Linear Collider (ILC), and the recommendation to utilize ''Cold'' technology for this future particle accelerator, this paper will present the lessons learned from the recently concluded Spallation Neutron Source (SNS) superconducting radio frequency (SRF) cryomodule production run at the Thomas Jefferson National Accelerator Facility (Jefferson Lab). Over the past twenty years Jefferson Lab has worked with industry to successfully design, manufacture, test and commission more SRF cryomodules than any other entity in the United States. The knowledge gained from the design and fabrication of the SNS prototype, eleven - 0.61 (medium) beta and the twelve - 0.81 (high) beta cryomodules, will prove to be an effective asset to the ILC project. After delivery of the final production cryomodule in March 2005, design and fabrication data will be collected, evaluated and presented to make this information beneficial for future particle accelerator projects. Recommendations with respect to these findings will also be presented as an integral part of this paper
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Dynamic Visualization of SNS Diagnostics Summary Report and System Status
Blokland, Willem; Long, Cary D; Murphy, Darryl J; Purcell, John D; Sundaram, Madhan
2005-01-01
The Spallation Neutron Source (SNS) accelerator systems will deliver a 1.0 GeV, 1.4 MW proton beam to a liquid mercury target for neutron scattering research. The accelerator complex consists of a 1 GeV linear accelerator, an accumulator ring and associated transport lines. The SNS diagnostics platform is PC-based running Embedded Windows XP and LabVIEW. The diagnostics instruments communicate with the control system using the Channel Access (CA) protocol of the Experimental Physics and Industrial Control System (EPICS). This paper describes the Diagnostics Group's approach to collecting data from the instruments, processing it, and presenting live in a summarized way over the web. Effectively, adding a supervisory level to the diagnostics instruments. One application of this data mining is the "Diagnostics Status Page" that summarizes the insert-able devices, transport efficiencies, and the mode of the accelerator in a compact webpage. The displays on the webpage change automatically to show the latest and/o...
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Vertical nanowire architectures
DEFF Research Database (Denmark)
Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.
2010-01-01
Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...
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Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui
2016-12-01
We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.
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Diameter-dependent coloration of silver nanowires
International Nuclear Information System (INIS)
Stewart, Mindy S; Qiu Chao; Jiang Chaoyang; Kattumenu, Ramesh; Singamaneni, Srikanth
2011-01-01
Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.
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Löschmann, Nadine; Michaelis, Martin; Rothweiler, Florian; Zehner, Richard; Cinatl, Jaroslav; Voges, Yvonne; Sharifi, Mohsen; Riecken, Kristoffer; Meyer, Jochen; von Deimling, Andreas; Fichtner, Iduna; Ghafourian, Taravat; Westermann, Frank; Cinatl, Jindrich
2013-01-01
Novel treatment options are needed for the successful therapy of patients with high-risk neuroblastoma. Here, we investigated the cyclin-dependent kinase (CDK) inhibitor SNS-032 in a panel of 109 neuroblastoma cell lines consisting of 19 parental cell lines and 90 sublines with acquired resistance to 14 different anticancer drugs. Seventy-three percent of the investigated neuroblastoma cell lines and all four investigated primary tumor samples displayed concentrations that reduce cell viability by 50% in the range of the therapeutic plasma levels reported for SNS-032 (<754 nM). Sixty-two percent of the cell lines and two of the primary samples displayed concentrations that reduce cell viability by 90% in this concentration range. SNS-032 also impaired the growth of the multidrug-resistant cisplatin-adapted UKF-NB-3 subline UKF-NB-3rCDDP1000 in mice. ABCB1 expression (but not ABCG2 expression) conferred resistance to SNS-032. The antineuroblastoma effects of SNS-032 did not depend on functional p53. The antineuroblastoma mechanism of SNS-032 included CDK7 and CDK9 inhibition-mediated suppression of RNA synthesis and subsequent depletion of antiapoptotic proteins with a fast turnover rate including X-linked inhibitor of apoptosis (XIAP), myeloid cell leukemia sequence 1 (Mcl-1), baculoviral IAP repeat containing 2 (BIRC2; cIAP-1), and survivin. In conclusion, CDK7 and CDK9 represent promising drug targets and SNS-032 represents a potential treatment option for neuroblastoma including therapy-refractory cases. PMID:24466371
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Yang, Jie; Bao, Chunxiong; Yu, Tao; Hu, Yingfei; Luo, Wenjun; Zhu, Weidong; Fu, Gao; Li, Zhaosheng; Gao, Hao; Li, Faming; Zou, Zhigang
2015-12-09
Hematite (α-Fe2O3) is one of the most promising candidates for photoelectrodes in photoelectrochemical water splitting system. However, the low visible light absorption coefficient and short hole diffusion length of pure α-Fe2O3 limits the performance of α-Fe2O3 photoelectrodes in water splitting. Herein, to overcome these drawbacks, single-crystalline tin-doped indium oxide (ITO) nanowire core and α-Fe2O3 nanocrystal shell (ITO@α-Fe2O3) electrodes were fabricated by covering the chemical vapor deposited ITO nanowire array with compact thin α-Fe2O3 nanocrystal film using chemical bath deposition (CBD) method. The J-V curves and IPCE of ITO@α-Fe2O3 core-shell nanowire array electrode showed nearly twice as high performance as those of the α-Fe2O3 on planar Pt-coated silicon wafers (Pt/Si) and on planar ITO substrates, which was considered to be attributed to more efficient hole collection and more loading of α-Fe2O3 nanocrystals in the core-shell structure than planar structure. Electrochemical impedance spectra (EIS) characterization demonstrated a low interface resistance between α-Fe2O3 and ITO nanowire arrays, which benefits from the well contact between the core and shell. The stability test indicated that the prepared ITO@α-Fe2O3 core-shell nanowire array electrode was stable under AM1.5 illumination during the test period of 40,000 s.
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Characterization of hydrothermally synthesized SnS nanoparticles for solar cell application
Rajwar, Birendra Kumar; Sharma, Shailendra Kumar
2018-05-01
In the present study, SnS nanoparticles were synthesized by simple hydrothermal method using stannous chloride and thiourea as tin (Sn) and sulfur (S) precursor respectively. Synthesized nanoparticles were characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy and UV-Vis Spectroscopy techniques. XRD pattern reveals that as-prepared nanoparticles exhibit orthorhombic structure. Average particles size was calculated using Scherrer's formula and found to be 23 nm. FESEM image shows that the as-prepared nanoparticles are in plate like structure. Direct optical band gap (Eg) of as-synthesized nanoparticles was calculated through UV-Vis Spectroscopy measurement and found to be 1.34 eV, which is near to optimum need for photovoltaic solar energy conversion (1.5 eV). Thus this SnS, narrowband gap semiconductor material can be applied as an alternative absorber material for solar cell application.
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Energy Technology Data Exchange (ETDEWEB)
Baby, Benjamin Hudson; Mohan, D. Bharathi, E-mail: d.bharathimohan@gmail.com
2017-05-01
We report the formation of single phase of SnS nanostructure through PVP assisted polyol synthesis by varying the source concentration ratio (Sn:S) from 1:1M to 1:12M. The effect of PVP concentration and reaction medium towards the preparation of SnS nanostructure is systematically studied through confocal Raman spectrometer, X-ray diffraction, thermogravimetry analysis, scanning electron microscope, transmission electron microscopy, X-ray photoelectron spectroscopy, UV–Vis–NIR absorption and fluorescence spectrophotometers. The surface morphology of SnS nanostructure changes from nanorods to spherical shape with increasing PVP concentration from 0.15M to 0.5M. Raman analysis corroborates that Raman active modes of different phases of Sn-S are highly active when Raman excitation energy is slightly greater than the energy band gap of the material. The presence of intrinsic defects and large number of grain boundaries resulted in an improved thermal stability of 20 °C during the phase transition of α-SnS. Band gap calculation from tauc plot showed the direct band gap of 1.5 eV which is attributed to the single phase of SnS, could directly meet the requirement of an absorber layer in thin film solar cells. Finally, we proposed an energy band diagram for as synthesized single phase SnS nanostructure based on the experimental results obtained from optical studies showing the energy transitions attributed to band edge transition and also due to the presence of intrinsic defects. - Highlights: • PVP stabilizes the orthorhombic (α) phase of SnS. • Optical band gap of P type SnS tuned by PVP for photovoltaic applications. • The formation of Sn rich SnS phase is investigated through XPS analysis. • Intrinsic defects enhance the thermal stability of α-SnS. • The feasibility of energy transition liable to point defects is discussed.
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Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
Energy Technology Data Exchange (ETDEWEB)
Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Araújo, D.; Pastore, C.E.; Gutierrez, M. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Frigeri, C. [Istituto CNR-IMEM Parco Area delle Scienze 37/A, Fontanini, 43010, Parma (Italy); Benali, A.; Lelièvre, J.F.; Gendry, M. [INL-Institut des Nanotechnologies de Lyon, UMR 5270 Ecole Centrale de Lyon 36, Avenue Guy de Collongue, 69134, Ecully Cedex (France)
2017-02-15
Highlights: • A TEM-HREM study of GaAs nanowires, growth over Si, is presented. • Misfit dislocations are detected in the Si/GaAs magma interface. • The study demonstrates strain relaxation through twin formation in some nanowires. - Abstract: To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on <111> oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grown alternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High Resolution Electron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limited concordance with the calculations of Yuan (2013) [1], where {111} twin planes in a <111>-oriented GaAs NW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strain relaxation and are probably induced by the local huge elastic strain observed by HREM in the lattice between the twin and the surface. The latter is attributed to some slight bending of the NW as shown by the inversion of the strain from one side to the other side of the NW.
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Overview of SNS Cryomodule Performance
Drury, Michael A; Davis, Kirk; Delayen, Jean R; Grenoble, Christiana; Hicks, William R; King, Larry; Plawski, Tomasz; Powers, Tom; Preble, Joseph P; Wang, Haipeng; Wiseman, Mark
2005-01-01
Thomas Jefferson National Accelerating Facility (Jefferson Lab) has completed production of 24 Superconducting Radio Frequency (SRF) cryomodules for the Spallation Neutron Source (SNS) superconducting linac. This includes one medium-beta (0.61) prototype, eleven medium-beta and twelve high-beta (0.81) production cryomodules. Ten medium-beta cryomodules as well as two high beta cryomodules have undergone complete operational performance testing in the Cryomodule Test Facility at Jefferson Lab. The set of tests includes measurements of maximum gradient, unloaded Q (Q0), microphonics, and response to Lorentz forces. The Qext's of the various couplers are measured and the behavior of the higher order mode couplers is examined. The mechanical and piezo tuners are also characterized. The results of these performance tests will be discussed in this paper.
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Methods for synthesizing metal oxide nanowires
Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee
2016-08-09
A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.
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Halo and space charge issues in the SNS Ring
International Nuclear Information System (INIS)
Fedotov, A.V.; Abell, D.T.; Beebe-Wang, J.; Lee, Y.Y.; Malitsky, N.; Wei, J.; Gluckstern, R.L.
2000-01-01
The latest designs for high-intensity proton rings require minimizing beam-induced radioactivation of the vacuum chamber. Although the tune depression in the ring is much smaller than in high-intensity linacs, space-charge contributions to halo formation and, hence, beam loss may be significant. This paper reviews our current understanding of halo formation issues for the Spallation Neutron Source (SNS) accumulator ring
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Halo and space charge issues in the SNS Ring
Energy Technology Data Exchange (ETDEWEB)
Fedotov, A.V.; Abell, D.T.; Beebe-Wang, J.; Lee, Y.Y.; Malitsky, N.; Wei, J.; Gluckstern, R.L.
2000-06-30
The latest designs for high-intensity proton rings require minimizing beam-induced radioactivation of the vacuum chamber. Although the tune depression in the ring is much smaller than in high-intensity linacs, space-charge contributions to halo formation and, hence, beam loss may be significant. This paper reviews our current understanding of halo formation issues for the Spallation Neutron Source (SNS) accumulator ring.
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Electron Transport Properties of Ge nanowires
Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.
2003-03-01
Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.
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EDITORIAL: Nanowires for energy Nanowires for energy
LaPierre, Ray; Sunkara, Mahendra
2012-05-01
This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the
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Directory of Open Access Journals (Sweden)
Lee eSoon Li
2016-04-01
Full Text Available Perception of the autonomy and relatedness of the self may be influenced by one’s experiences and social expectations within a particular cultural setting. The present research examined the role of culture and the Autonomous-Related self-construal in predicting for different aspects of Social Networking Sites (SNS usage in three Asian countries, especially focusing on those aspects serving interpersonal goals. Participants in this cross-cultural study included 305 university students from Malaysia (n = 105, South Korea (n = 113, and China (n = 87. The study explored specific social and interpersonal behaviors on SNS, such as browsing the contacts’ profiles, checking for updates, and improving contact with SNS contacts, as well as the intensity of SNS use, hypothesizing that those with high intensity of use in the Asian context may be doing so to achieve the social goal of maintaining contact and keeping updated with friends. Two scales measuring activities on other users’ profiles and contact with friends’ profiles were developed and validated. As predicted, some cross-cultural differences were found. Koreans were more likely to use SNS to increase contact but tended to spend less time browsing contacts’ profiles than the Malaysians and Chinese. The intensity of SNS use differed between the countries as well, where Malaysians reported higher intensity than Koreans and Chinese. Consistent with study predictions, Koreans were found with the highest Autonomous-Related self-construal scores. The Autonomous-Related self-construal predicted SNS intensity. The findings suggest that cultural contexts, along with the way the self is construed in different cultures, may encourage different types of SNS usage. The authors discuss study implications and suggest future research directions.
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Lee, Soon Li; Kim, Jung-Ae; Golden, Karen Jennifer; Kim, Jae-Hwi; Park, Miriam Sang-Ah
2016-01-01
Perception of the autonomy and relatedness of the self may be influenced by one's experiences and social expectations within a particular cultural setting. The present research examined the role of culture and the Autonomous-Related self-construal in predicting for different aspects of Social Networking Sites (SNS) usage in three Asian countries, especially focusing on those aspects serving interpersonal goals. Participants in this cross-cultural study included 305 university students from Malaysia (n = 105), South Korea (n = 113), and China (n = 87). The study explored specific social and interpersonal behaviors on SNS, such as browsing the contacts' profiles, checking for updates, and improving contact with SNS contacts, as well as the intensity of SNS use, hypothesizing that those with high intensity of use in the Asian context may be doing so to achieve the social goal of maintaining contact and keeping updated with friends. Two scales measuring activities on other users' profiles and contact with friends' profiles were developed and validated. As predicted, some cross-cultural differences were found. Koreans were more likely to use SNS to increase contact but tended to spend less time browsing contacts' profiles than the Malaysians and Chinese. The intensity of SNS use differed between the countries as well, where Malaysians reported higher intensity than Koreans and Chinese. Consistent with study predictions, Koreans were found with the highest Autonomous-Related self-construal scores. The Autonomous-Related self-construal predicted SNS intensity. The findings suggest that cultural contexts, along with the way the self is construed in different cultures, may encourage different types of SNS usage. The authors discuss study implications and suggest future research directions.
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Lee, Soon Li; Kim, Jung-Ae; Golden, Karen Jennifer; Kim, Jae-Hwi; Park, Miriam Sang-Ah
2016-01-01
Perception of the autonomy and relatedness of the self may be influenced by one's experiences and social expectations within a particular cultural setting. The present research examined the role of culture and the Autonomous-Related self-construal in predicting for different aspects of Social Networking Sites (SNS) usage in three Asian countries, especially focusing on those aspects serving interpersonal goals. Participants in this cross-cultural study included 305 university students from Malaysia (n = 105), South Korea (n = 113), and China (n = 87). The study explored specific social and interpersonal behaviors on SNS, such as browsing the contacts' profiles, checking for updates, and improving contact with SNS contacts, as well as the intensity of SNS use, hypothesizing that those with high intensity of use in the Asian context may be doing so to achieve the social goal of maintaining contact and keeping updated with friends. Two scales measuring activities on other users' profiles and contact with friends' profiles were developed and validated. As predicted, some cross-cultural differences were found. Koreans were more likely to use SNS to increase contact but tended to spend less time browsing contacts' profiles than the Malaysians and Chinese. The intensity of SNS use differed between the countries as well, where Malaysians reported higher intensity than Koreans and Chinese. Consistent with study predictions, Koreans were found with the highest Autonomous-Related self-construal scores. The Autonomous-Related self-construal predicted SNS intensity. The findings suggest that cultural contexts, along with the way the self is construed in different cultures, may encourage different types of SNS usage. The authors discuss study implications and suggest future research directions. PMID:27148100
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International Nuclear Information System (INIS)
Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P
2010-01-01
In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.
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International Nuclear Information System (INIS)
Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.
2010-01-01
In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.
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Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R
2010-08-06
In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.
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Electrically Injected UV-Visible Nanowire Lasers
Energy Technology Data Exchange (ETDEWEB)
Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming
2015-09-01
There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.
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Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method
International Nuclear Information System (INIS)
Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata
2008-01-01
Tin sulfide films of 0.20 µm thickness were grown on glass and ITO substrates by the successive ionic layer adsorption and reaction (SILAR) method using SnSO 4 and Na 2 S solution. The as-grown films were well covered and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films and provided information on the crystallite size and residual strain of the thin films. FESEM revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDX showed that as-grown SnS films were slightly rich in tin component. High absorption in the visible region was evident from UV–Vis transmission spectra. PL studies were carried out with 550 nm photon excitation. To the best of our knowledge, however, no attempt has been made to fabricate a SnS thin film using the SILAR technique
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Nanowire-decorated microscale metallic electrodes
DEFF Research Database (Denmark)
Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.
2008-01-01
The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....
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SNS 2.1K Cold Box Turn-down Studies
International Nuclear Information System (INIS)
F. Casagrande; P.A. Gurd; D.R. Hatfield; M.P. Howell; W.H. Strong; D. Arenius; J. Creel; V. Ganni; P. Knudsen
2006-01-01
The Spallation Neutron Source (SNS) at Oak Ridge National Laboratory is nearing completion. The cold section of the Linac consists of 81 superconducting radio frequency cavities cooled to 2.1K by a 2400 watt cryogenic refrigeration system. The 2.1K cold box consists of four stages of centrifugal compressors with LN2-cooled variable speed electric motors and magnetic bearings. The cryogenic system successfully supported the Linac beam commissioning at both 4.2K and 2.1K and has been fully operational since June 2005. This paper describes the control principles utilized and the experimental results obtained for the SNS cold compressors turn-down capability to about 30% of the design flow, and possible limitation of the frequency dependent power factor of the cold compressor electric motors, which was measured for the first time during commissioning. These results helped to support the operation of the Linac over a very broad and stable cold compressor operating flow range (refrigeration capacity) and pressure. This in turn helped to optimize the cryogenic system operating parameters, minimizing the utilities and improving the system reliability and availability
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International Nuclear Information System (INIS)
Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G
2011-01-01
Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.
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EPICS V4 Evaluation for SNS Neutron Data
Energy Technology Data Exchange (ETDEWEB)
Kasemir, Kay [ORNL; Pearson, Matthew R [ORNL; Guyotte, Greg S [ORNL
2015-01-01
Version 4 of the Experimental Physics and Industrial Control System (EPICS) toolkit allows defining application-specific structured data types (pvData) and offers a network protocol for their efficient exchange (pvAccess). We evaluated V4 for the transport of neutron events from the detectors of the Spallation Neutron Source (SNS) to data acquisition and experiment monitoring systems. This includes the comparison of possible data structures, performance tests, and experience using V4 in production on a beam line.
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An automatic sample changer for use on the SNS
International Nuclear Information System (INIS)
1982-10-01
A design for an Automatic Room Temperature Sample Changer suitable for any completely contained sample, gas, liquid or solid, has been produced. Samples can be moved in any sequence into the neutron beam. The design was evolved primarily to suit SNS instruments. A prototype was constructed specifically for the LAD spectrometer having ten sample positions. The accuracy of the sample positioning was determined. (author)
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Neutronic moderator design for the Spallation Neutron Source (SNS)
International Nuclear Information System (INIS)
Charlton, L.A.; Barnes, J.M.; Johnson, J.O.; Gabriel, T.A.
1998-01-01
Neutronics analyses are now in progress to support the initial selection of moderator design parameters for the Spallation Neutron Source (SNS). The results of the initial optimization studies involving moderator poison plate location, moderator position, and premoderator performance for the target system are presented in this paper. Also presented is an initial study of the use of a composite moderator to produce a liquid methane like spectrum
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Electron-cloud simulation results for the PSR and SNS
International Nuclear Information System (INIS)
Pivi, M.; Furman, M.A.
2002-01-01
We present recent simulation results for the main features of the electron cloud in the storage ring of the Spallation Neutron Source (SNS) at Oak Ridge, and updated results for the Proton Storage Ring (PSR) at Los Alamos. In particular, a complete refined model for the secondary emission process including the so called true secondary, rediffused and backscattered electrons has been included in the simulation code
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Bakhshayeshi, A.; Taghavi Mendi, R.; Majidiyan Sarmazdeh, M.
2018-02-01
Recently, a cubic structure of polymorphic SnS2 has been synthesized experimentally, which is stable at room temperature. In this paper, we calculated some structural, electronic and optical properties of the cubic SnS2 structure based on the full potential-linearized augmented plane waves method. We also studied the effect of hydrostatic pressure on the physical properties of the cubic SnS2 structure. Structural results show that the compressibility of the cubic SnS2 phase is greater than its trigonal phase and the compressibility decreases with increasing pressure. Investigations of the electronic properties indicate that pressure changes the density of states and the energy band gap increases with increasing pressure. The variation of energy band gap versus pressure is almost linear. We concluded that cubic SnS2 is a semiconductor with an indirect energy band gap, like its trigonal phase. The optical calculations revealed that the dielectric constant decreases with increasing pressure, and the width of the forbidden energy interval increases for electromagnetic wave propagation. Moreover, plasmonic energy and refractive index are changed with increasing pressure.
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Electrospinning synthesis of superconducting BSCCO nanowires
International Nuclear Information System (INIS)
Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.
2013-01-01
Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material
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Micromagnetic simulations of cylindrical magnetic nanowires
Ivanov, Yurii P.
2015-05-27
This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.
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Overview of SNS Cryomodule Performance
International Nuclear Information System (INIS)
Michael Drury; Edward Daly; Christiana Grenoble; William Hicks; Lawrence King; Tomasz Plawski; Thomas Powers; Joseph Preble; Haipeng Wang; Mark Wiseman; G. Davis; Jean Delayen
2005-01-01
Thomas Jefferson National Accelerating Facility (Jefferson Lab) has completed production of 24 Superconducting Radio Frequency (SRF) cryomodules for the Spallation Neutron Source (SNS) superconducting linac. This includes one medium-β (0.61) prototype, eleven medium-β and twelve high-β (0.81) production cryomodules. Nine medium-β cryomodules as well as two high-β cryomodules have undergone complete operational performance testing in the Cryomodule Test Facility at Jefferson Lab. The set of tests includes measurements of maximum gradient, unloaded Q (Q 0 ), microphonics, and response to Lorentz forces. The Q ext 's of the various couplers are measured and the behavior of the higher order mode couplers is examined. The mechanical and piezo tuners are also characterized. The results of these performance tests will be discussed in this paper
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Magnetostatic Interaction in Fe-Co Nanowires
Directory of Open Access Journals (Sweden)
Laura Elbaile
2012-01-01
Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.
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Resistance Fluctuations in GaAs Nanowire Grids
Directory of Open Access Journals (Sweden)
Ivan Marasović
2014-01-01
Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.
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International Nuclear Information System (INIS)
Bashkirov, S.A.; Gremenok, V.F.; Ivanov, V.A.; Shevtsova, V.V.; Gladyshev, P.P.
2015-01-01
Tin monosulfide SnS raises an interest as a promising material for photovoltaics. The influence of the substrate material on the microstructure and optical properties of SnS thin films with [111] texture obtained by hot wall vacuum deposition on glass, molybdenum and indium tin oxide substrates is reported. The lattice parameters for layers grown on different substrates were determined by X-ray diffraction and their deviations from the data reported in the literature for single α-SnS crystals were discussed. The change in the degree of preferred orientation of the films depending on the substrate material is observed. The direct nature of the optical transitions with the optical band gap of 1.15 ± 0.01 eV is reported. - Highlights: • SnS thin films were hot wall deposited on glass, molybdenum and indium tin oxide. • Physical properties of the films were studied with respect to the substrate type. • The SnS lattice parameter deviations were observed and the explanation was given. • The direct optical transitions with the band gap of 1.15 ± 0.01 eV were observed
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Zhang, Qin; Cheng, Xiaodi; Qiu, Guohong; Liu, Fan; Feng, Xionghan
2016-05-01
This study presents a simplified approach for size-controlled synthesis of manganese oxide octahedral molecular sieve (OMS-2) nanowires using potassium permanganate (KMnO4) and different inorganic acids (HCl, HNO3, and H2SO4) under reflux conditions. The morphology and nanostructure of the synthesized products are characterized by X-ray diffraction, Ar adsorption, and electron microscopy analysis, in order to elucidate the controlling effects of acid concentration and type as well as the formation mechanism of OMS-2 nanowires. The concentration of inorganic acid is a crucial factor controlling the phase of the synthesized products. OMS-2 nanowires are obtained with HCl at the concentration ≥0.96 mol/L or with HNO3 and H2SO4 at the concentrations ≥0.72 mol/L. Differently, the type of inorganic acid effectively determines the particle size of OMS-2 nanowires. When the acid is changed from HCl to HNO3 and H2SO4 in the reflux system, the average length of OMS-2 declines significantly by 60-70% (1104-442 and 339 nm), with minor decreased in the average width (43-39 and 34 nm). The formation of OMS-2 nanowires under reflux conditions with KMnO4 and inorganic acids involves a two-step process, i.e., the initial formation of layered manganese oxides, and subsequent transformation to OMS-2 via a dissolution-recrystallization process under acidic conditions. The proposed reflux route provides an alternative approach for synthesizing OMS-2 nanowires as well as other porous nano-crystalline OMS materials.
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Silicon nanowire hybrid photovoltaics
Garnett, Erik C.
2010-06-01
Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.
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Silicon nanowire hybrid photovoltaics
Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike
2010-01-01
Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.
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Energy Technology Data Exchange (ETDEWEB)
Robles, Víctor, E-mail: victor.robles@ciemat.es; Trigo, Juan Francisco; Guillén, Cecilia; Herrero, José
2015-05-01
Tin sulfide thin films were prepared by co-evaporation on soda-lime glass substrates, for use as absorber layers. The synthesis was carried out at 350 °C substrate temperature and varying the growth rate in the 2-6 Å/s range, adjusting the deposition time in order to obtain thicknesses in the 700-1500 nm range. After evaporation, the samples were heated at 400 °C and 500 °C under various atmospheres. The evolution of the morphological, structural and optical properties has been analyzed as a function of the thickness and deposition rate, before and after annealing. For the samples grown at the lowest rate, SnS and Sn{sub 2}S{sub 3} phase mixing has been observed by X-ray diffraction. Samples with reduced thickness preferably crystallize in the SnS phase, whereas thicker layers become richer in the Sn{sub 2}S{sub 3} phase. The sulfur treatment of samples prepared at the lowest rate results in the formation of SnS{sub 2} phase. Otherwise, the samples obtained at the highest rates show single-phase SnS after heating at 400 °C in sulfur atmosphere, with gap energy values around 1.24 eV. - Highlights: • Tin sulfide thin films were deposited by co-evaporation at different growth rates. • The influence of the growth rate and post-annealing at different conditions was studied. • The SnS phase was obtained by optimizing the growth rate and the annealing process. • The SnS phase presented properties for use as absorber layer.
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Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio
2012-01-01
Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.
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The Jefferson Lab Quality Assurance Program for the SNS Superconducting Linac Construction Project
International Nuclear Information System (INIS)
Joseph Ozelis
2003-01-01
As part of a multi-laboratory collaboration, Jefferson Lab is currently engaged in the fabrication, assembly, and testing of 23 cryomodules for the superconducting linac portion of the Spallation Neutron Source (SNS) being built at Oak Ridge National Laboratory. As with any large accelerator construction project, it is vitally important that these components be built in a cost effective and timely manner, and that they meet the stringent performance requirements dictated by the project specifications. A comprehensive Quality Assurance (QA) program designed to help accomplish these goals has been implemented as an inherent component of JLab's SNS construction effort. This QA program encompasses the traditional spectrum of component performance, from incoming parts inspection, raw materials testing, through to sub-assembly and finished article performance evaluation
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Nanowire sensors and arrays for chemical/biomolecule detection
Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.
2005-01-01
We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.
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Photoexcited Individual Nanowires: Key Elements in Room Temperature Detection of Oxidizing Gases
International Nuclear Information System (INIS)
Prades, J. D.; Jimenez-Diaz, R.; Manzanares, M.; Andreu, T.; Cirera, A.; Romano-Rodriguez, A.; Hernandez-Ramirez, F.; Morante, J. R.
2009-01-01
Illuminating metal oxide semiconductors with ultra-violet light is a feasible alternative to activate chemical reactions at their surface and thus, using them as gas sensors without the necessity of heating them. Here, the response at room temperature of individual single-crystalline SnO 2 nanowires towards NO 2 is studied in detail. The results reveal that similar responses to those obtained with thermally activated sensors can be achieved by choosing the optimal illumination conditions. This finding paves the way to the development of conductometric gas sensors operated at room temperature. The power consumption in these devices is in range with conventional micromachined sensors.
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Structural and tunneling properties of Si nanowires
Montes Muñoz, Enrique
2013-12-06
We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.
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Structural and tunneling properties of Si nanowires
Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo
2013-01-01
We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.
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Semiconducting silicon nanowires for biomedical applications
Coffer, JL
2014-01-01
Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol
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International Nuclear Information System (INIS)
Johnson, J.O.
2000-01-01
The Department of Energy (DOE) has given the Spallation Neutron Source (SNS) project approval to begin Title I design of the proposed facility to be built at Oak Ridge National Laboratory (ORNL) and construction is scheduled to commence in FY01 . The SNS initially will consist of an accelerator system capable of delivering an ∼0.5 microsecond pulse of 1 GeV protons, at a 60 Hz frequency, with 1 MW of beam power, into a single target station. The SNS will eventually be upgraded to a 2 MW facility with two target stations (a 60 Hz station and a 10 Hz station). The radiation transport analysis, which includes the neutronic, shielding, activation, and safety analyses, is critical to the design of an intense high-energy accelerator facility like the proposed SNS, and the Monte Carlo method is the cornerstone of the radiation transport analyses
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Interactions between semiconductor nanowires and living cells.
Prinz, Christelle N
2015-06-17
Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.
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Surfactant-assisted carbon doping in ZnO nanowires using Poly Ethylene Glycol (PEG)
Energy Technology Data Exchange (ETDEWEB)
Amanullah, Malik; Javed, Qurat-ul-Ain, E-mail: Quratulain@sns.nust.edu.pk; Rizwan, Syed
2016-09-01
Zinc Oxide (ZnO) provides unique properties owing to its wide bandgap, large resistivity range and possibility to tune the physical properties. The surfactant assisted carbon doping was made possible due to the lowering of surface energy. The ZnO and carbon doped ZnO (C-ZnO) nanowires fabricated by hydrothermal process, Poly Ethylene Glycol (PEG) is used as surfactant in hydrothermal synthesis followed by post growth annealing treatment at 600 °C–700 °C. At 5%–10% of diluted PEG carbon is doped in ZnO. The crystallinity, structural morphology and elemental composition analysis for ZnO and C-ZnO nanowires were carried out using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy techniques respectively. Carbon doping in ZnO nanowires in the presence of different percentage of surfactant is explained by calculating the change in surface energy with respect to change in PEG molecule concentration. It was found that the surface energy per molecule modulates from 3.92 × 10{sup −8} J/m{sup 2} to 8.16 × 10{sup −7} J/m{sup 2} in the PEG concentration range between 5% and 10%. Our results provides a new theoretical calculations, implemented on real system, to observe the details of PEG-assisted Carbon doping in II-VI semiconductor nanowires. - Highlights: • ZnO and C-ZnO was synthesized by PEG assisted post growth annealing process. • At 5% and 10% of PEG successful synthesis of C-ZnO was found. • XRD, SEM and EDX characterizations confirm the successful synthesis of ZnO and C-ZnO. • Change in surface energy with respect to PEG molecule concentration was calculated.
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International Nuclear Information System (INIS)
Kim, Sang-Ho; Campisi, Isidoro E.
2007-01-01
In order to address the optimization in a pulsed operation, a systematic computational analysis has been made in comparison with operational experiences in superconducting radio-frequency (SRF) cavities at the Spallation Neutron Source (SNS). From the analysis it appears that the SNS SRF cavities can be operated at temperatures higher than 2.1 K, a fact resulting from both the pulsed nature of the superconducting cavities, the specific configuration of the existing cryogenic plant and the operating frequency
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Phase-field model of vapor-liquid-solid nanowire growth
Wang, Nan; Upmanyu, Moneesh; Karma, Alain
2018-03-01
We present a multiphase-field model to describe quantitatively nanowire growth by the vapor-liquid-solid (VLS) process. The free-energy functional of this model depends on three nonconserved order parameters that distinguish the vapor, liquid, and solid phases and describe the energetic properties of various interfaces, including arbitrary forms of anisotropic γ plots for the solid-vapor and solid-liquid interfaces. The evolution equations for those order parameters describe basic kinetic processes including the rapid (quasi-instantaneous) equilibration of the liquid catalyst to a droplet shape with constant mean curvature, the slow incorporation of growth atoms at the droplet surface, and crystallization within the droplet. The standard constraint that the sum of the phase fields equals unity and the conservation of the number of catalyst atoms, which relates the catalyst volume to the concentration of growth atoms inside the droplet, are handled via separate Lagrange multipliers. An analysis of the model is presented that rigorously maps the phase-field equations to a desired set of sharp-interface equations for the evolution of the phase boundaries under the constraint of force balance at three-phase junctions (triple points) given by the Young-Herring relation that includes torque term related to the anisotropy of the solid-liquid and solid-vapor interface excess free energies. Numerical examples of growth in two dimensions are presented for the simplest case of vanishing crystalline anisotropy and the more realistic case of a solid-liquid γ plot with cusped minima corresponding to two sets of (10 ) and (11 ) facets. The simulations reproduce many of the salient features of nanowire growth observed experimentally, including growth normal to the substrate with tapering of the side walls, transitions between different growth orientations, and crawling growth along the substrate. They also reproduce different observed relationships between the nanowire growth
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Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.
2010-09-01
Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.
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Guo, Yujiao; Cui, Kuixin; Hu, Mingyi; Jin, Shengming
2017-08-01
The wire-like Fe 3+ -doped (BiO) 2 CO 3 photocatalyst was synthesized by a hydrothermal method. The photocatalytic property of Fe 3+ -doped (BiO) 2 CO 3 nanowires was evaluated through degradation of sodium isopropyl xanthate under UV-visible light irradiation. The as-prepared Fe 3+ -doped (BiO) 2 CO 3 nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV-visible diffuse reflectance spectroscopy (UV-vis DRS), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) in detail. The results of XRD showed that the crystallinity of (BiO) 2 CO 3 nanowires decreased when Fe 3+ ions were introduced into the solution system. XPS results illustrated that xanthate could be absorbed on the surface of Fe 3+ -doped (BiO) 2 CO 3 nanowires to produce BiS bond at the beginning of the reaction, which could broaden the visible light absorption. FTIR spectra confirmed the formation of SO 4 2- after photocatalytic decomposition of xanthate solution. The Fe 3+ -doped (BiO) 2 CO 3 nanowires showed an enhanced photocatalytic activity for decomposition of xanthate due to the narrower band gap and larger BET surface area, comparing with pure (BiO) 2 CO 3 nanowires. By the results of UV-vis spectra of the solution and FTIR spectra of recycled Fe 3+ -doped (BiO) 2 CO 3 , the xanthate was oxidized completely into CO 2 and SO 4 2- . The photocatalytic degradation process of xanthate followed a pseudo-second-order kinetics model. The mechanism of enhanced photocatalytic activity was proposed as well. Copyright © 2017 Elsevier Ltd. All rights reserved.
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Gold nanowires and the effect of impurities
Directory of Open Access Journals (Sweden)
Novaes Frederico
2006-01-01
Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.
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Electric Conductivity of Phosphorus Nanowires
International Nuclear Information System (INIS)
Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew
2009-01-01
We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)
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Failure mechanisms and electromechanical coupling in semiconducting nanowires
Directory of Open Access Journals (Sweden)
Peng B.
2010-06-01
Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.
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Growth and properties of self-catalyzed (In,Mn)As nanowires
International Nuclear Information System (INIS)
Bouravleuv, Alexei; Soshnikov, Ilya; Cirlin, George; Reznik, Rodion; Khrebtov, Artem; Samsonenko, Yuriy; Werner, Peter; Savin, Alexander; Lipsanen, Harri
2016-01-01
Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths
Energy Technology Data Exchange (ETDEWEB)
Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)
2016-07-01
We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.
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Solution-Phase Synthesis of Cesium Lead Halide Perovskite Nanowires.
Zhang, Dandan; Eaton, Samuel W; Yu, Yi; Dou, Letian; Yang, Peidong
2015-07-29
Halide perovskites have attracted much attention over the past 5 years as a promising class of materials for optoelectronic applications. However, compared to hybrid organic-inorganic perovskites, the study of their pure inorganic counterparts, like cesium lead halides (CsPbX3), lags far behind. Here, a catalyst-free, solution-phase synthesis of CsPbX3 nanowires (NWs) is reported. These NWs are single-crystalline, with uniform growth direction, and crystallize in the orthorhombic phase. Both CsPbBr3 and CsPbI3 are photoluminescence active, with composition-dependent temperature and self-trapping behavior. These NWs with a well-defined morphology could serve as an ideal platform for the investigation of fundamental properties and the development of future applications in nanoscale optoelectronic devices based on all-inorganic perovskites.
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Magnetic and superconducting nanowires
DEFF Research Database (Denmark)
Piraux, L.; Encinas, A.; Vila, L.
2005-01-01
magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...
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Energy Technology Data Exchange (ETDEWEB)
Zhang, Meng; Zhao, Jian [School of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266061 (China); Li, Zhenjiang, E-mail: zhenjiangli@qust.edu.cn [School of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, China (China); Yu, Hongyuan [School of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266061 (China); Wang, Yaqi [School of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266042 (China); Meng, Alan, E-mail: alanmengqust@163.com [School of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266042 (China); Li, Qingdang [School of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, China (China)
2016-11-15
Herein, bamboo-like 3C-SiC nanowires have been successfully fabricated on homogeneous 6H-SiC substrate by a simple chemical vapor reaction (CVR) approach. The obtained 3C-SiC nanostructure with periodical fluctuating diameter, is composed of two alternating structure units, the typical normal-sized stem segment with perfect crystallinity and obvious projecting nodes segment having high-density stacking faults. The formation of the interesting morphology is significantly subjected to the peculiar growth condition provided by the homogeneous substrate as well as the varying growth elastic energy. Furthermore, the photoluminescence (PL) performance measured on the bamboo-like SiC nanowire shows an intensive emission peaks centered at 451 nm and 467 nm, which has been expected to make a positive progress toward the optical application of the SiC-based one-dimensional (1D) nanostructures, such as light emission diode (LED). - Graphical abstract: Based on the synergistic growth mechanism from homogeneous substrate and elastic energy, bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. The blue-violet light emission properties of the bamboo-like nanowires have also been investigated for exploring their peculiar optical application. - Highlights: • Bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. • A synergistic growth mechanism from homogeneous substrate and elastic energy has been proposed firstly. • The blue-violet light emission properties of the products displayed peculiar optical application.
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International Nuclear Information System (INIS)
Zhang, Meng; Zhao, Jian; Li, Zhenjiang; Yu, Hongyuan; Wang, Yaqi; Meng, Alan; Li, Qingdang
2016-01-01
Herein, bamboo-like 3C-SiC nanowires have been successfully fabricated on homogeneous 6H-SiC substrate by a simple chemical vapor reaction (CVR) approach. The obtained 3C-SiC nanostructure with periodical fluctuating diameter, is composed of two alternating structure units, the typical normal-sized stem segment with perfect crystallinity and obvious projecting nodes segment having high-density stacking faults. The formation of the interesting morphology is significantly subjected to the peculiar growth condition provided by the homogeneous substrate as well as the varying growth elastic energy. Furthermore, the photoluminescence (PL) performance measured on the bamboo-like SiC nanowire shows an intensive emission peaks centered at 451 nm and 467 nm, which has been expected to make a positive progress toward the optical application of the SiC-based one-dimensional (1D) nanostructures, such as light emission diode (LED). - Graphical abstract: Based on the synergistic growth mechanism from homogeneous substrate and elastic energy, bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. The blue-violet light emission properties of the bamboo-like nanowires have also been investigated for exploring their peculiar optical application. - Highlights: • Bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. • A synergistic growth mechanism from homogeneous substrate and elastic energy has been proposed firstly. • The blue-violet light emission properties of the products displayed peculiar optical application.
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Goh Say Leng; Suddin Lada; Mohd Zulkifli Muhammad; Ag Asri Hj Ag Ibrahim; Tamrin Amboala
2011-01-01
The objective of the paper is to explore the factors that encourage students to adopt social network sites (SNS) in Malaysia and to use the study’s findings to develop guidelines for SNS providers on how to maximize the rate of adoption. A conceptual model of Technology Acceptance Model (TAM), Theory of Planned Behaviour (TPB) and intrinsic motivation is proposed and empirically tested in the context of SNS usage. Structural Equation modelling was used on the survey data from 283 university s...
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International Nuclear Information System (INIS)
Liu, C; Dai, L; You, L P; Xu, W J; Qin, G G
2008-01-01
Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p + -Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 x 10 17 to 1.4 x 10 19 cm -3 . The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.
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Fang, CM; deGroot, RA; Wiegers, GA; Haas, C
1996-01-01
In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)(1.20)TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar
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Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.
1996-01-01
In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1.20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar
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Vertically aligned nanowires from boron-doped diamond.
Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E
2008-11-01
Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.
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Nanowire failure: long = brittle and short = ductile.
Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J
2012-02-08
Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society
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Ballistic superconductivity in semiconductor nanowires
Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.
2017-01-01
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843
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Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity.
Zhou, Xing; Hu, Xiaozong; Zhou, Shasha; Song, Hongyue; Zhang, Qi; Pi, Lejing; Li, Liang; Li, Huiqiao; Lü, Jingtao; Zhai, Tianyou
2018-02-01
van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe 2 /SnS 2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe 2 /SnS 2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe 2 /SnS 2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 10 13 Jones (I ph /I dark ratio of ≈10 6 ) and photoresponsivity of 244 A W -1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm -2 ). © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Long Silver Nanowires Synthesis by Pulsed Electrodeposition
Directory of Open Access Journals (Sweden)
M.R. Batevandi
2015-09-01
Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.
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Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.
Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi
2018-06-05
SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.
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Preparation and characterization of CuO nanowire arrays
International Nuclear Information System (INIS)
Yu Dongliang; Ge Chuannan; Du Youwei
2009-01-01
CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.
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SNS Sample Activation Calculator Flux Recommendations and Validation
Energy Technology Data Exchange (ETDEWEB)
McClanahan, Tucker C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Gallmeier, Franz X. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Iverson, Erik B. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Lu, Wei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS)
2015-02-01
The Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) uses the Sample Activation Calculator (SAC) to calculate the activation of a sample after the sample has been exposed to the neutron beam in one of the SNS beamlines. The SAC webpage takes user inputs (choice of beamline, the mass, composition and area of the sample, irradiation time, decay time, etc.) and calculates the activation for the sample. In recent years, the SAC has been incorporated into the user proposal and sample handling process, and instrument teams and users have noticed discrepancies in the predicted activation of their samples. The Neutronics Analysis Team validated SAC by performing measurements on select beamlines and confirmed the discrepancies seen by the instrument teams and users. The conclusions were that the discrepancies were a result of a combination of faulty neutron flux spectra for the instruments, improper inputs supplied by SAC (1.12), and a mishandling of cross section data in the Sample Activation Program for Easy Use (SAPEU) (1.1.2). This report focuses on the conclusion that the SAPEU (1.1.2) beamline neutron flux spectra have errors and are a significant contributor to the activation discrepancies. The results of the analysis of the SAPEU (1.1.2) flux spectra for all beamlines will be discussed in detail. The recommendations for the implementation of improved neutron flux spectra in SAPEU (1.1.3) are also discussed.
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Moessbauer study of Fe-Co nanowires
Energy Technology Data Exchange (ETDEWEB)
Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)
2002-01-28
Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)
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BEAM-LOSS DRIVEN DESIGN OPTIMIZATION FOR THE SPALLATION NEUTRON SOURCE (SNS) RING.
Energy Technology Data Exchange (ETDEWEB)
WEI,J.; BEEBE-WANG,J.; BLASKIEWICZ,M.; CAMERON,P.; DANBY,G.; GARDNER,C.J.; JACKSON,J.; LEE,Y.Y.; LUDEWIG,H.; MALITSKY,N.; RAPARIA,D.; TSOUPAS,N.; WENG,W.T.; ZHANG,S.Y.
1999-03-29
This paper summarizes three-stage design optimization for the Spallation Neutron Source (SNS) ring: linear machine design (lattice, aperture, injection, magnet field errors and misalignment), beam core manipulation (painting, space charge, instabilities, RF requirements), and beam halo consideration (collimation, envelope variation, e-p issues etc.).
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Beam-Loss Driven Design Optimization for the Spallation Neutron Source (SNS) Ring
International Nuclear Information System (INIS)
Wei, J.
1999-01-01
This paper summarizes three-state design optimization for the Spallation Neutron Source (SNS) ring: linear machine design (lattice, aperture, injection, magnet field errors and misalignment), beam core manipulation (painting, space charge, instabilities, RF requirements), and beam halo consideration (collimation, envelope variation, e-p issues etc.)
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Biofunctionalized Magnetic Nanowires
Kosel, Jurgen
2013-12-19
Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.
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Biofunctionalized Magnetic Nanowires
Kosel, Jü rgen; Ravasi, Timothy; Contreras Gerenas, Maria Fernanda
2013-01-01
Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.
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Magnetic drug delivery with FePd nanowires
Energy Technology Data Exchange (ETDEWEB)
Pondman, Kirsten M.; Bunt, Nathan D. [Neuro Imaging, MIRA Institute, University of Twente, Enschede (Netherlands); Maijenburg, A. Wouter [Inorganic Material Science, MESA+ Institute for Nanotechnology, University of Twente, Enschede (Netherlands); Wezel, Richard J.A. van [Biomedical Signals and Systems, MIRA, Twente University, Enschede (Netherlands); Kishore, Uday [Centre for Infection, Immunity and Disease Mechanisms, Biosciences, Brunel University, London (United Kingdom); Abelmann, Leon [Transducer Science and Technology group, MESA+ Institute for nanotechnology, University of Twente, Enschede (Netherlands); Elshof, Johan E. ten [Inorganic Material Science, MESA+ Institute for Nanotechnology, University of Twente, Enschede (Netherlands); Haken, Bennie ten, E-mail: b.tenhaken@utwente.nl [Neuro Imaging, MIRA Institute, University of Twente, Enschede (Netherlands)
2015-04-15
Magnetic drug delivery is a promising method to target a drug to a diseased area while reducing negative side effects caused by systemic administration of drugs. In magnetic drug delivery a therapeutic agent is coupled to a magnetic nanoparticle. The particles are injected and at the target location withdrawn from blood flow by a magnetic field. In this study a FePd nanowire is developed with optimised properties for magnetic targeting. The nanowires have a high magnetic moment to reduce the field gradient needed to capture them with a magnet. The dimensions and the materials of the nanowire and coating are such that they are dispersable in aqueous media, non-cytotoxic, easily phagocytosed and not complement activating. This is established in several in-vitro tests with macrophage and endothelial cell lines. Along with the nanowires a magnet is designed, optimised for capture of the nanowires from the blood flow in the hind leg of a rat. The system is used in a pilot scale in-vivo experiment. No negative side effects from injection of the nanowires were found within the limited time span of the experiment. In this first pilot experiment no nanowires were found to be targeted by the magnet, or in the liver, kidneys or spleen, most likely the particles were removed during the fixation procedure. - Highlights: • Description of the magnetic properties of nanowires. • Design and characterisation of a biocompatible FePd nanowire. • In-vitro cytotoxicity analysis and immune system responses. • In-vivo magnetic drug delivery using the developed nanowires.
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Electrochemical synthesis of CORE-shell magnetic nanowires
Ovejero, Jesús G.
2015-04-16
(Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.
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Metal-dielectric-CNT nanowires for surface-enhanced Raman spectroscopy
Bond, Tiziana C.; Altun, Ali; Park, Hyung Gyu
2017-10-03
A sensor with a substrate includes nanowires extending vertically from the substrate, a hafnia coating on the nanowires that provides hafnia coated nanowires, and a noble metal coating on the hafnia coated nanowires. The top of the hafnia and noble metal coated nanowires bent onto one another to create a canopy forest structure. There are numerous randomly arranged holes that let through scattered light. The many points of contact, hot spots, amplify signals. The methods include the steps of providing a Raman spectroscopy substrate, introducing nano crystals to the Raman spectroscopy substrate, growing a forest of nanowires from the nano crystals on the Raman spectroscopy substrate, coating the nanowires with hafnia providing hafnia coated nanowires, and coating the hafnia coated nanowires with a noble metal or other metal.