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Sample records for crystalline boron carbide

  1. Single crystalline boron carbide nanobelts:synthesis and characterization

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    This paper reports that the large-scale single crystalline boron carbide nanobelts have been fabricated through a simple carbothermal reduction method with B/B203/C/Fe powder as precursors at ll00~C.Transmission electron microscopy and selected area electron diffraction characterizations show that the boron carbide nanobelt has a B4C rhomb-centred hexagonal structure with good crystallization.Electron energy loss spectroscopy analysis indicates that the nanobelt contains only B and C,and the atomic ratio of B to C is close to 4:1.High resolution transmission electron microscopy results show that the preferential growth direction of the nanobelt is [101].A possible growth mechanism is also discussed.

  2. Sintering of nano crystalline silicon carbide by doping with boron carbide

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-06-01

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050°C at vacuum (3 mbar) for 15 min. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid-state sintering process. Polytype transformation from 6H to 4H was observed.

  3. Crystalline boron nitride aerogels

    Science.gov (United States)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  4. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  5. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  6. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  7. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  8. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  9. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  10. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.

  11. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  12. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  13. Tribochemical interactions of boron carbides against steel

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yu.G. (Univ. Karlsruhe, Inst. fuer Keramik im Maschinenbau (Germany)); Koval' chenko, A.M.; Kossko, I.A. (Inst. for Problems of Materials Science, Ukrainian Academy of Sciences, Kiev (Ukraine))

    1992-04-15

    Auger electron spectroscopy and electron microscopy were used to investigate the surface chemistry and tribological properties of boron carbide sliding against steel. It was revealed that the interacting process was accompanied by the diffusion of the ceramic elements into steel and by the oxidation of the steel and ceramic surfaces due to the oxygen presence in the atmosphere. It was established that the oxidation process in air or during friction tests leads to a graphitized layer on the boron carbide surface under the B{sub 2}O{sub 3} film. It was demonstrated that the oxidation caused a decrease in the friction coefficient of boron carbide sliding against steel. (orig.).

  14. Combustion synthesis of novel boron carbide

    Science.gov (United States)

    Harini, R. Saai; Manikandan, E.; Anthonysamy, S.; Chandramouli, V.; Eswaramoorthy, D.

    2013-02-01

    The solid-state boron carbide is one of the hardest materials known, ranking third behind diamond and cubic boron nitride. Boron carbide (BxCx) enriched in the 10B isotope is used as a control rod material in the nuclear industry due to its high neutron absorption cross section and other favorable physico-chemical properties. Conventional methods of preparation of boron carbide are energy intensive processes accompanied by huge loss of boron. Attempts were made at IGCAR Kalpakkam to develop energy efficient and cost effective methods to prepare boron carbide. The products of the gel combustion and microwave synthesis experiments were characterized for phase purity by XRD. The carbide formation was ascertained using finger-print spectroscopy of FTIR. Samples of pyrolized/microwave heated powder were characterized for surface morphology using SEM. The present work shows the recent advances in understanding of structural and chemical variations in boron carbide and their influence on morphology, optical and vibrational property results discussed in details.

  15. Boron Carbides As Thermo-electric Materials

    Science.gov (United States)

    Wood, Charles

    1988-01-01

    Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

  16. Atomic-Level Understanding of "Asymmetric Twins" in Boron Carbide

    Science.gov (United States)

    Xie, Kelvin Y.; An, Qi; Toksoy, M. Fatih; McCauley, James W.; Haber, Richard A.; Goddard, William A.; Hemker, Kevin J.

    2015-10-01

    Recent observations of planar defects in boron carbide have been shown to deviate from perfect mirror symmetry and are referred to as "asymmetric twins." Here, we demonstrate that these asymmetric twins are really phase boundaries that form in stoichiometric B4C (i.e., B12C3 ) but not in B13C2 . TEM observations and ab initio simulations have been coupled to show that these planar defects result from an interplay of stoichiometry, atomic positioning, icosahedral twinning, and structural hierarchy. The composition of icosahedra in B4C is B11C and translation of the carbon atom from a polar to equatorial site leads to a shift in bonding and a slight distortion of the lattice. No such distortion is observed in boron-rich B13C2 because the icosahedra do not contain carbon. Implications for tailoring boron carbide with stoichiometry and extrapolations to other hierarchical crystalline materials are discussed.

  17. Atomic-Level Understanding of "Asymmetric Twins" in Boron Carbide.

    Science.gov (United States)

    Xie, Kelvin Y; An, Qi; Toksoy, M Fatih; McCauley, James W; Haber, Richard A; Goddard, William A; Hemker, Kevin J

    2015-10-23

    Recent observations of planar defects in boron carbide have been shown to deviate from perfect mirror symmetry and are referred to as "asymmetric twins." Here, we demonstrate that these asymmetric twins are really phase boundaries that form in stoichiometric B(4)C (i.e., B(12)C(3)) but not in B(13)C(2). TEM observations and ab initio simulations have been coupled to show that these planar defects result from an interplay of stoichiometry, atomic positioning, icosahedral twinning, and structural hierarchy. The composition of icosahedra in B(4)C is B(11)C and translation of the carbon atom from a polar to equatorial site leads to a shift in bonding and a slight distortion of the lattice. No such distortion is observed in boron-rich B(13)C(2) because the icosahedra do not contain carbon. Implications for tailoring boron carbide with stoichiometry and extrapolations to other hierarchical crystalline materials are discussed.

  18. Metallicity of boron carbides at high pressure

    Science.gov (United States)

    Dekura, Haruhiko; Shirai, Koun; Yanase, Akira

    2010-03-01

    Electronic structure of semiconducting boron carbide at high pressure has been theoretically investigated, because of interests in the positive pressure dependence of resistivity, in the gap closure, and in the phase transition. The most simplest form B12(CCC) is assumed. Under assumptions of hydrostatic pressure and neglecting finite-temperature effects, boron carbide is quite stable at high pressure. The crystal of boron carbide is stable at least until a pressure higher than previous experiments showed. The gap closure occurs only after p=600 GPa on the assumption of the original crystal symmetry. In the low pressure regime, the pressure dependence of the energy gap almost diminishes, which is an exceptional case for semiconductors, which could be one of reasons for the positive pressure dependence of resistivity. A monotonous increase in the apex angle of rhombohedron suggests that the covalent bond continues to increase. The C chain inserted in the main diagonal of rhombohedral structure is the chief reason of this stability.

  19. Rapid accurate isotopic measurements on boron in boric acid and boron carbide.

    Science.gov (United States)

    Duchateau, N L; Verbruggen, A; Hendrickx, F; De Bièvre, P

    1986-04-01

    A procedure is described whereby rapid and accurate isotopic measurements can be performed on boron in boric acid and boron carbide after fusion of these compounds with calcium carbonate. It allows the determination of the isotopic composition of boron in boric acid and boron carbide and the direct assay of boron or the (10)B isotope in boron carbide by isotope-dilution mass spectrometry.

  20. Boron carbide morphology changing under purification

    Science.gov (United States)

    Rahmatullin, I. A.; Sivkov, A. A.

    2015-10-01

    Boron carbide synthesized by using coaxial magnetoplasma accelerator with graphite electrodes was purified by two different ways. XRD-investigations showed content changing and respectively powder purification. Moreover TEM-investigations demonstrated morphology changing of product under purification that was discussed in the work.

  1. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  2. Probing Field Emission from Boron Carbide Nanowires

    Institute of Scientific and Technical Information of China (English)

    TIAN Ji-Fa; GAO Hong-Jun; BAO Li-Hong; WANG Xing-Jun; HUI Chao; LIU Fei; LI Chen; SHEN Cheng-Min; WANG Zong-Li; GU Chang-Zhi

    2008-01-01

    High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 106 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.

  3. Micrometric rods grown by nanosecond pulsed laser deposition of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Quintas, Ignacio; Oujja, Mohamed; Sanz, Mikel; Benitez-Cañete, Antonio [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Chater, Richard J. [Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Cañamares, Maria Vega [Instituto de Estructura de la Materia, CSIC, Serrano 119, 28006 Madrid (Spain); Marco, José F. [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Castillejo, Marta, E-mail: marta.castllejo@iqfr.csic.es [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-02-15

    Highlights: • Micrometric rods obtained by ns pulsed laser deposition of boron carbide at 1064 and 266 nm. • At 1064 nm microrods display crystalline polyhedral shape with sharp edges and flat sides. • Microrods consist of a mixture of boron, boron oxide, boron carbide and aliphatic hydrocarbons. - Abstract: Micrometric size rods have been fabricated via pulsed laser deposition in vacuum from boron carbide targets using nanosecond pulses of 1064 and 266 nm and room temperature Si (1 0 0) substrates. Morphological, structural and chemical characterization of the microrods was made by applying scanning electron microscopy, focussed ion beam microscopy coupled to secondary ion mass spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. Ablation at 1064 nm favours the formation of microrods with high aspect ratio, sharp edges and pyramidal tips, typically 10 μm long with a cross section of around 2 μm × 2 μm. Differently, at 266 nm the microrods are of smaller size and present a more globular aspect. The analyses of the microrods provide information about their crystalline nature and composition, based on a mixture which includes boron, boron oxide and boron carbide, and allows discussion of the wavelength dependent growth mechanisms involved.

  4. Behavior of disordered boron carbide under stress.

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W; Chhowalla, Manish

    2006-07-21

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6 GPa approximately = P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2-3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  5. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  6. Synthesis and photoluminescence property of boron carbide nanowires

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B2O3/C powder precursors under an argon flow at 1100~C. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm.

  7. Equations of state and melting curve of boron carbide in the high-pressure range of shock compression

    Energy Technology Data Exchange (ETDEWEB)

    Molodets, A. M., E-mail: molodets@icp.ac.ru; Golyshev, A. A.; Shakhrai, D. V. [Russian Academy of Sciences, Institute for Problems in Chemical Physics (Russian Federation)

    2017-03-15

    We have constructed the equations of state for crystalline boron carbide B{sub 11}C (C–B–C) and its melt under high dynamic and static pressures. A kink on the shock adiabat for boron carbide has been revealed in the pressure range near 100 GPa, and the melting curve with negative curvature in the pressure range 0–120 GPa has been calculated. The results have been used for interpreting the kinks on the shock adiabat for boron carbide in the pressure range of 0–400 GPa.

  8. Mechanical Properties of Crystalline Silicon Carbide Nanowires.

    Science.gov (United States)

    Zhang, Huan; Ding, Weiqiang; Aidun, Daryush K

    2015-02-01

    In this paper, the mechanical properties of crystalline silicon carbide nanowires, synthesized with a catalyst-free chemical vapor deposition method, were characterized with nanoscale tensile testing and mechanical resonance testing methods inside a scanning electron microscope. Tensile testing of individual silicon carbide nanowire was performed to determine the tensile properties of the material including the tensile strength, failure strain and Young's modulus. The silicon carbide nanowires were also excited to mechanical resonance in the scanning electron microscope vacuum chamber using mechanical excitation and electrical excitation methods, and the corresponding resonance frequencies were used to determine the Young's modulus of the material according to the simple beam theory. The Young's modulus values from tensile tests were in good agreement with the ones obtained from the mechanical resonance tests.

  9. Computational Studies of Physical Properties of Boron Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  10. Shock-wave strength properties of boron carbide and silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, D.E.

    1994-02-01

    Time-resolved velocity interferometry measurements have been made on boron carbide and silicon carbide ceramics to assess dynamic equation-of-state and strength properties of these materials. Hugoniot pecursor characteristics, and post-yield shock and release wave properties, indicated markedly different dynamic strength and flow behavior for the two carbides.

  11. Microstructure and Properties of Plasma Spraying Boron Carbide Coating

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Microstructure of plasma spray boron carbide coating was studied by SEM and TEM. Its physical,mechanical and electrical properties were measured. The results showed that high microhardness,modulus and Iow porosity of B4C coating were manufactured by plasma spray. It was lamellar packing and dense. The B4C coating examined here contained two principal structures and two impurity phase besides major phase. The relatively small value of Young′s modulus, comparing with that of the bulk materials, is explained by porosity. The Fe impurity phase could account for the relatively high electrical conductivity of boron carbide coating by comparing with the general boron carbide materials.

  12. Hugoniot equation of state and dynamic strength of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, Dennis E. [Applied Research Associates, Southwest Division, 4300 San Mateo Blvd NE, A-220, Albuquerque, New Mexico 87110-129 (United States)

    2015-04-28

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  13. Hugoniot equation of state and dynamic strength of boron carbide

    Science.gov (United States)

    Grady, Dennis E.

    2015-04-01

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20-60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable mechanistic

  14. Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires

    Science.gov (United States)

    Yu, Zhiyang; Luo, Jian; Shi, Baiou; Zhao, Jiong; Harmer, Martin P.; Zhu, Jing

    2015-11-01

    Aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) was employed to study the distribution of barium atoms on the surfaces and in the interiors of boron carbide based nanowires. Barium based dopants, which were used to control the crystal growth, adsorbed to the surfaces of the boron-rich crystals in the form of nanometer-thick surficial films (a type of surface complexion). During the crystal growth, these dopant-based surface complexions became embedded inside the single crystalline segments of fivefold boron-rich nanowires collectively, where they were converted to more ordered monolayer and bilayer modified complexions. Another form of bilayer complexion stabilized at stacking faults has also been identified. Numerous previous works suggested that dopants/impurities tended to segregate at the stacking faults or twinned boundaries. In contrast, our study revealed the previously-unrecognized possibility of incorporating dopants and impurities inside an otherwise perfect crystal without the association to any twin boundary or stacking fault. Moreover, we revealed the amount of barium dopants incorporated was non-equilibrium and far beyond the bulk solubility, which might lead to unique properties.

  15. Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires.

    Science.gov (United States)

    Yu, Zhiyang; Luo, Jian; Shi, Baiou; Zhao, Jiong; Harmer, Martin P; Zhu, Jing

    2015-11-26

    Aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) was employed to study the distribution of barium atoms on the surfaces and in the interiors of boron carbide based nanowires. Barium based dopants, which were used to control the crystal growth, adsorbed to the surfaces of the boron-rich crystals in the form of nanometer-thick surficial films (a type of surface complexion). During the crystal growth, these dopant-based surface complexions became embedded inside the single crystalline segments of fivefold boron-rich nanowires collectively, where they were converted to more ordered monolayer and bilayer modified complexions. Another form of bilayer complexion stabilized at stacking faults has also been identified. Numerous previous works suggested that dopants/impurities tended to segregate at the stacking faults or twinned boundaries. In contrast, our study revealed the previously-unrecognized possibility of incorporating dopants and impurities inside an otherwise perfect crystal without the association to any twin boundary or stacking fault. Moreover, we revealed the amount of barium dopants incorporated was non-equilibrium and far beyond the bulk solubility, which might lead to unique properties.

  16. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  17. Radial furnace shows promise for growing straight boron carbide whiskers

    Science.gov (United States)

    Feingold, E.

    1967-01-01

    Radial furnace, with a long graphite vaporization tube, maintains a uniform thermal gradient, favoring the growth of straight boron carbide whiskers. This concept seems to offer potential for both the quality and yield of whiskers.

  18. On surface Raman scattering and luminescence radiation in boron carbide.

    Science.gov (United States)

    Werheit, H; Filipov, V; Schwarz, U; Armbrüster, M; Leithe-Jasper, A; Tanaka, T; Shalamberidze, S O

    2010-02-01

    The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.

  19. Dynamic compaction of boron carbide by a shock wave

    Science.gov (United States)

    Buzyurkin, Andrey E.; Kraus, Eugeny I.; Lukyanov, Yaroslav L.

    2016-10-01

    This paper presents experiments on explosive compaction of boron carbide powder and modeling of the stress state behind the shock front at shock loading. The aim of this study was to obtain a durable low-porosity compact sample. The explosive compaction technology is used in this problem because the boron carbide is an extremely hard and refractory material. Therefore, its compaction by traditional methods requires special equipment and considerable expenses.

  20. Analysis of boron carbides' electronic structure

    Science.gov (United States)

    Howard, Iris A.; Beckel, Charles L.

    1986-01-01

    The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

  1. Isotopic effects on the phonon modes in boron carbide.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U; Rotter, H W; Shalamberidze, S O

    2010-10-01

    The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals.

  2. Evidence of amorphisation of B4C boron carbide under slow, heavy ion irradiation

    Science.gov (United States)

    Gosset, D.; Miro, S.; Doriot, S.; Victor, G.; Motte, V.

    2015-12-01

    Boron carbide is widely used either as armor-plate or neutron absorber. In both cases, a good structural stability is required. However, a few studies have shown amorphisation may occur in severe conditions. Hard impacts lead to the formation of amorphous bands. Some irradiations in electronic regime with H or He ions have also shown amorphisation of the material. Most authors however consider the structure is not drastically affected by irradiations in the ballistic regime. Here, we have irradiated at room temperature dense boron carbide pellets with Au 4 MeV ions, for which most of the damage is in the ballistic regime. This study is part of a program devoted to the behavior of boron carbide under irradiation. Raman observations have been performed after the irradiations together with transmission electron microscopy (TEM). Raman observations show a strong structural damage at moderate fluences (1014/cm2, about 0.1 dpa), in agreement with previous studies. On the other hand, TEM shows the structure remains crystalline up to 1015/cm2 then partially amorphises. The amorphisation is heterogeneous, with the formation of nanometric amorphous zones with increasing density. It then appears short range and long range disorder occurs at quite different damage levels. Further experiments are in progress aiming at studying the structural stability of boron carbide and isostructural materials (α-B, B6Si,…).

  3. Amorphisation of boron carbide under slow heavy ion irradiation

    Science.gov (United States)

    Gosset, D.; Miro, S.; Doriot, S.; Moncoffre, N.

    2016-08-01

    Boron carbide B4C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B4C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10-2 displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  4. Boron carbide coating deposition on tungsten substrates from atomic fluxes of boron and carbon

    Science.gov (United States)

    Sadovskiy, Y.; Begrambekov, L.; Ayrapetov, A.; Gretskaya, I.; Grunin, A.; Dyachenko, M.; Puntakov, N.

    2016-09-01

    A device used for both coating deposition and material testing is presented in the paper. By using lock chambers, sputtering targets are easily exchanged with sample holder thus allowing testing of deposited samples with high power density electron or ion beams. Boron carbide coatings were deposited on tungsten samples. Methods of increasing coating adhesion are described in the paper. 2 μm boron carbide coatings sustained 450 heating cycles from 100 to 900 C. Ion beam tests have shown satisfactory results.

  5. Characterization of a boron carbide-based polymer neutron sensor

    Science.gov (United States)

    Tan, Chuting; James, Robinson; Dong, Bin; Driver, M. Sky; Kelber, Jeffry A.; Downing, Greg; Cao, Lei R.

    2015-12-01

    Boron is used widely in thin-film solid-state devices for neutron detection. The film thickness and boron concentration are important parameters that relate to a device's detection efficiency and capacitance. Neutron depth profiling was used to determine the film thicknesses and boron-concentration profiles of boron carbide-based polymers grown by plasma enhanced chemical vapor deposition (PECVD) of ortho-carborane (1,2-B10C2H12), resulting in a pure boron carbide film, or of meta-carborane (1,7-B10C2H12) and pyridine (C5H5N), resulting in a pyridine composite film, or of pyrimidine (C4H4N2) resulting in a pure pyrimidine film. The pure boron carbide film had a uniform surface appearance and a constant thickness of 250 nm, whereas the thickness of the composite film was 250-350 nm, measured at three different locations. In the meta-carborane and pyridine composite film the boron concentration was found to increase with depth, which correlated with X-ray photoelectron spectroscopy (XPS)-derived atomic ratios. A proton peak from 14N (n,p)14C reaction was observed in the pure pyrimidine film, indicating an additional neutron sensitivity to nonthermal neutrons from the N atoms in the pyrimidine.

  6. Ordering of carbon atoms in boron carbide structure

    Energy Technology Data Exchange (ETDEWEB)

    Ponomarev, V. I., E-mail: i2212@yandex.ru; Kovalev, I. D.; Konovalikhin, S. V.; Vershinnikov, V. I. [Russian Academy of Sciences, Institute of Structural Macrokinetics and Materials Science (Russian Federation)

    2013-05-15

    Boron carbide crystals have been obtained in the entire compositional range according to the phase diagram by self-propagating high-temperature synthesis (SHS). Based on the results of X-ray diffraction investigations, the samples were characterized by the unit-cell metric and reflection half-width in the entire range of carbon concentrations. A significant spread in the boron carbide unit-cell parameters for the same carbon content is found in the data in the literature; this spread contradicts the structural concepts for covalent compounds. The SHS samples have not revealed any significant spread in the unit-cell parameters. Structural analysis suggests that the spread of parameters in the literary data is related to the unique process of ordering of carbon atoms in the boron carbide structure.

  7. Shock-induced localized amorphization in boron carbide.

    Science.gov (United States)

    Chen, Mingwei; McCauley, James W; Hemker, Kevin J

    2003-03-01

    High-resolution electron microscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragranular amorphous bands that occur parallel to specific crystallographic planes and contiguously with apparent cleaved fracture surfaces. This damage mechanism explains the measured, but not previously understood, decrease in the ballistic performance of boron carbide at high impact rates and pressures. The formation of these amorphous bands is also an example of how shock loading can result in the synthesis of novel structures and materials with substantially altered properties.

  8. Functionalization and cellular uptake of boron carbide nanoparticles

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Björkdahl, O.; Sørensen, P. G.;

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant...... melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded...... with boron-containing nanoparticles can hinder the growth of neighboring cells upon neutron irradiation. This could provide the first step toward a T cell-guided boron neutron capture therapy....

  9. Functionalization and cellular uptake of boron carbide nanoparticles

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Björkdahl, O.; Sørensen, P. G.

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant...... melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded...... with boron-containing nanoparticles can hinder the growth of neighboring cells upon neutron irradiation. This could provide the first step toward a T cell-guided boron neutron capture therapy....

  10. Raman spectroscopic characterization of the core-rim structure in reaction bonded boron carbide ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jannotti, Phillip; Subhash, Ghatu, E-mail: subhash@ufl.edu [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zheng, James Q.; Halls, Virginia [Program Executive Office—Soldier Protection and Individual Equipment, US Army, Fort Belvoir, Virginia 22060 (United States); Karandikar, Prashant G.; Salamone, S.; Aghajanian, Michael K. [M-Cubed Technologies, Inc., Newark, Delaware 19711 (United States)

    2015-01-26

    Raman spectroscopy was used to characterize the microstructure of reaction bonded boron carbide ceramics. Compositional and structural gradation in the silicon-doped boron carbide phase (rim), which develops around the parent boron carbide region (core) due to the reaction between silicon and boron carbide, was evaluated using changes in Raman peak position and intensity. Peak shifting and intensity variation from the core to the rim region was attributed to changes in the boron carbide crystal structure based on experimental Raman observations and ab initio calculations reported in literature. The results were consistent with compositional analysis determined by energy dispersive spectroscopy. The Raman analysis revealed the substitution of silicon atoms first into the linear 3-atom chain, and then into icosahedral units of the boron carbide structure. Thus, micro-Raman spectroscopy provided a non-destructive means of identifying the preferential positions of Si atoms in the boron carbide lattice.

  11. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    Science.gov (United States)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  12. High-hardness ceramics based on boron carbide fullerite derivatives

    Science.gov (United States)

    Ovsyannikov, D. A.; Popov, M. Yu.; Perfilov, S. A.; Prokhorov, V. M.; Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2017-02-01

    A new type of ceramics based on the phases of fullerite derivatives and boron carbide B4C is obtained. The material is synthesized at a temperature of 1500 K and a relatively low pressure of 4 GPa; it has a high hardness of 45 GPa and fracture toughness of 15 MPa m1/2.

  13. Dynamic strength of reaction-sintered boron carbide ceramic

    Science.gov (United States)

    Savinykh, A. S.; Garkushin, G. V.; Razorenov, S. V.; Rumyantsev, V. I.

    2015-06-01

    The shock compression wave profiles in three modifications of boron carbide ceramic are studied in the compressive stress range 3-19 GPa. The Hugoniot elastic limit and the spall strength of the materials are determined. It is confirmed that the spall strength of high-hardness ceramic changes nonmonotonically with the compressive stress in a shock wave.

  14. Standard specification for nuclear-Grade boron carbide pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2007-01-01

    1.1 This specification applies to boron carbide pellets for use as a control material in nuclear reactors. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

  15. An Exploration of Neutron Detection in Semiconducting Boron Carbide

    Science.gov (United States)

    Hong, Nina

    The 3He supply problem in the U.S. has necessitated the search for alternatives for neutron detection. The neutron detection efficiency is a function of density, atomic composition, neutron absorption cross section, and thickness of the neutron capture material. The isotope 10B is one of only a handful of isotopes with a high neutron absorption cross section---3840 barns for thermal neutrons. So a boron carbide semiconductor represents a viable alternative to 3He. This dissertation provides an evaluation of the performance of semiconducting boron carbide neutron detectors grown by plasma enhance chemical vapor deposition (PECVD) in order to determine the advantages and drawbacks of these devices for neutron detection. Improved handling of the PECVD system has resulted in an extremely stable plasma, enabling deposition of thick films of semiconducting boron carbide. A variety of material and semiconducting characterization tools have been used to investigate the structure and electronic properties of boron carbide thin films, including X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, infrared/Raman spectroscopy, current-voltage measurements and capacitance-voltage measurements. Elemental concentrations in the boron carbide films have been obtained from Rutherford backscattering and elastic recoil detection analysis. Solid state neutron detection devices have been fabricated in the form of heterostructured p-n diodes, p-type boron carbide/n-type Si. Operating conditions, including applied bias voltage, and time constants, have been optimized for maximum detection efficiency and correlated to the semiconducting properties investigated in separate electronic measurements. Accurate measurements of the neutron detection efficiency and the response of the detector to a wide range of neutron wavelengths have been performed at a well calibrated, tightly collimated, "white" cold neutron beam source using time-of-flight neutron detection technique

  16. Disorder and defects are not intrinsic to boron carbide

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure–high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C–B–C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  17. Disorder and defects are not intrinsic to boron carbide.

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-18

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  18. The local structure of transition metal doped semiconducting boron carbides

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jing; Dowben, P A [Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Behlen Laboratory of Physics, University of Nebraska-Lincoln, PO Box 880111, Lincoln, NE 68588-0111 (United States); Luo Guangfu; Mei Waining [Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266 (United States); Kizilkaya, Orhan [J. Bennett Johnston Sr. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Hwy., Baton Rouge LA 70806 (United States); Shepherd, Eric D; Brand, J I [College of Engineering, and the Nebraska Center for Materials and Nanoscience, N209 Walter Scott Engineering Center, 17th and Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

    2010-03-03

    Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C{sub 2}B{sub 10}H{sub 12}) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all the 3d transition metal doped boron carbides, Ti through Cu, are compared using cluster and/or icosahedral chain calculations, where the latter have periodic boundary conditions.

  19. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2010-01-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  20. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst.

  1. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  2. Electric Heating Property from Butyl Rubber-Loaded Boron Carbide Composites

    Institute of Scientific and Technical Information of China (English)

    MENG Dechuan; WANG Ninghui; LI Guofeng

    2014-01-01

    We researched the electric heating property from butyl rubber-loaded boron carbide composite. The effects of boron carbide content on bulk resistivity, voltage-current characteristic, thermal conductivity and thermal stability of boron carbide/butyl rubber (IIR) polymer composite were introduced. The analysis results indicated that the bulk resistivity decreased greatly with increasing boron carbide content, and when boron carbide content reached to 60%, the bulk resistivity achieved the minimum. Accordingly, electric heating behavior of the composite is strongly dependent on boron carbide content as well as applied voltage. The content of boron carbide was found to be effective in achieving high thermal conductivity in composite systems. The thermal conductivity of the composite material with added boron carbide was improved nearly 20 times than that of the pure IIR. The thermal stability test showed that, compared with pure IIR, the thermal stable time of composites was markedly extended, which indicated that the boron carbide can significantly improve the thermal stability of boron carbide/IIR composite.

  3. Predicted boron-carbide compounds: a first-principles study.

    Science.gov (United States)

    Wang, De Yu; Yan, Qian; Wang, Bing; Wang, Yuan Xu; Yang, Jueming; Yang, Gui

    2014-06-14

    By using developed particle swarm optimization algorithm on crystal structural prediction, we have explored the possible crystal structures of B-C system. Their structures, stability, elastic properties, electronic structure, and chemical bonding have been investigated by first-principles calculations with density functional theory. The results show that all the predicted structures are mechanically and dynamically stable. An analysis of calculated enthalpy with pressure indicates that increasing of boron content will increase the stability of boron carbides under low pressure. Moreover, the boron carbides with rich carbon content become more stable under high pressure. The negative formation energy of predicted B5C indicates its high stability. The density of states of B5C show that it is p-type semiconducting. The calculated theoretical Vickers hardnesses of B-C exceed 40 GPa except B4C, BC, and BC4, indicating they are potential superhard materials. An analysis of Debye temperature and electronic localization function provides further understanding chemical and physical properties of boron carbide.

  4. Boron carbide (B4C) coating. Deposition and testing

    Science.gov (United States)

    Azizov, E.; Barsuk, V.; Begrambekov, L.; Buzhinsky, O.; Evsin, A.; Gordeev, A.; Grunin, A.; Klimov, N.; Kurnaev, V.; Mazul, I.; Otroshchenko, V.; Putric, A.; Sadovskiy, Ya.; Shigin, P.; Vergazov, S.; Zakharov, A.

    2015-08-01

    Boron carbide was proposed as a material of in-situ protecting coating for tungsten tiles of ITER divertor. To prove this concept the project including investigation of regimes of plasma deposition of B4C coating on tungsten and tests of boron carbide layer in ITER-like is started recently. The paper contends the first results of the project. The results of B4C coating irradiation by the plasma pulses of QSPU-T plasma accelerator are presented. The new device capable of B4C film deposition on tungsten and testing of the films and materials with ITER-like heat loads and ion- and electron irradiation is described. The results of B4C coating deposition and testing of both tungsten substrate and coating are shown and discussed.

  5. Electrical transport and thermoelectric properties of boron carbide nanowires

    Science.gov (United States)

    Kirihara, Kazuhiro; Mukaida, Masakazu; Shimizu, Yoshiki

    2017-04-01

    The electrical transport and thermoelectric property of boron carbide nanowires synthesized by a carbothermal method are reported. It is demonstrated that the nanowires achieve a higher Seebeck coefficient and power factor than those of the bulk samples. The conduction mechanism of the nanowires at low temperatures below 300 K is different from that of the sintered-polycrystalline and single-crystal bulk samples. In a temperature range of 200–450 K, there is a crossover between electrical conduction by variable-range hopping and phonon-assisted hopping. The inhomogeneous carbon concentration and planar defects, such as twins and stacking faults, in the nanowires are thought to modify the bonding nature and electronic structure of the boron carbide crystal substantially, causing differences in the electrical conductivity and Seebeck coefficient. The effect of boundary scattering of phonon at nanostructured surface on the thermal conductivity reduction is discussed.

  6. Synthesis of low carbon boron carbide powder using a minimal time processing route: Thermal plasma

    Directory of Open Access Journals (Sweden)

    Avinna Mishra

    2015-12-01

    Full Text Available Boron carbide powder was synthesized by thermal plasma reduction of boric acid in presence of graphite with a very minimal processing time. Subsequently, the as-synthesized products were leached to minimize the impurities content. Based on the results of X-ray diffraction and Raman spectroscopy, the effect of leaching on phase purity and crystallinity was studied. X-ray photoelectron spectroscopy was performed to identify the chemical composition which highlighted the absence of the BO bonding in the deconvoluted B 1s core-level spectrum. Finally, the temperature dependent thermal conductivity behavior of the leached materials was analyzed and presented.

  7. Promotion of the Growth of Boron-Carbide Nanowires

    Science.gov (United States)

    Kranov, Yanko; Zhang, Daqing; McIlroy, David; Norton, Grant

    2000-03-01

    Boron carbide, is a wide bandgap semiconductor (2.1eV) with a high melting temperature in excess of 2400^circC. Initial studies indicate that nanowires of boron carbide approximately 25 ~30 μm in length and less than 100 nm in diameter can be grown by the technique of plasma enhanced chemical vapor deposition by a mode of the vapor-liquid-solid mechanism [1] at relatively low temperatures ( ~1150^circC). Through the use of boron based eutectics such as FeB, NiB and PtB nanowire growth at temperatures below 1150^circC. These metal borides have successively lower melting temperatures, respectively. In this paper we will discuss a simple technique for making submicron metal boride particles, as well as a simple means of depositing them onto a surface. In addition, the effect of droplet size on nanowire diameter and the stability of the size of the metal boride droplet during growth will be discussed. These studies demonstrate that the surface can be selectively seeded thereby controlling the location of the nanowires, i.e. select area deposition. Lastly, the techniques and materials used to grow boron carbide nanowires can easily be used to grow other types of nanowires, as well as carbon nanotubes. [1]. D. N. McIlroy, Daqing Zhang, Robert M. Cohen, J. Wharton, Yongjun Geng, M. Grant Norton, G. De Stasio, B.Gilbert, L.Perfetti, J.H.Streiff, B.Broocks and J.L. McHale, Phys. Rev. B 60 (1999) 4874

  8. Characterization of boron carbide nanoparticles prepared by a solid state thermal reaction

    Science.gov (United States)

    Chang, B.; Gersten, B. L.; Szewczyk, S. T.; Adams, J. W.

    2007-01-01

    The production of boron carbide (B4C) nanoparticles was investigated in a conventional high temperature furnace reactor. The reaction was carried out by heating a mixture of amorphous carbon and amorphous boron at 1550 °C to efficiently obtain a quantity of B4C. Scanning electron microscopy studies showed the average size of B4C particles was 200 nm, ranging from 50 nm to 350 nm. X-ray diffraction transmission electron microscopy and electron diffraction studies indicated that the prepared nanoparticles were crystalline B4C with a high density twin structure. High resolution transmission electron microscopy and selected area diffraction were also used to further characterize the structure of the prepared B4C particles, while energy dispersive spectroscopy and electron energy loss spectroscopy were used to determine the stoichiometry of the product. A solid state diffusion reaction mechanism is proposed.

  9. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    Science.gov (United States)

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  10. Depressurization amorphization of single-crystal boron carbide.

    Science.gov (United States)

    Yan, X Q; Tang, Z; Zhang, L; Guo, J J; Jin, C Q; Zhang, Y; Goto, T; McCauley, J W; Chen, M W

    2009-02-20

    We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressurization amorphization results from pressure-induced irreversible bending of C-B-C atomic chains cross-linking 12 atom icosahedra at the rhombohedral vertices.

  11. Structural phase transitions in boron carbide under stress

    Science.gov (United States)

    Korotaev, P.; Pokatashkin, P.; Yanilkin, A.

    2016-01-01

    Structural transitions in boron carbide B4C under stress were studied by means of first-principles molecular dynamics in the framework of density functional theory. The behavior depends strongly on degree of non-hydrostatic stress. Under hydrostatic stress continuous bending of the three-atom C-B-C chain was observed up to 70 GPa. The presence of non-hydrostatic stress activates abrupt reversible chain bending, which is displacement of the central boron atom in the chain with the formation of weak bonds between this atom and atoms in the nearby icosahedra. Such structural change can describe a possible reversible phase transition in dynamical loading experiments. High non-hydrostatic stress achieved in uniaxial loading leads to disordering of the initial structure. The formation of carbon chains is observed as one possible transition route.

  12. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  13. Frequency mixing in boron carbide laser ablation plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Oujja, M.; Benítez-Cañete, A.; Sanz, M.; Lopez-Quintas, I.; Martín, M.; Nalda, R. de, E-mail: r.nalda@iqfr.csic.es; Castillejo, M.

    2015-05-01

    Graphical abstract: - Highlights: • Two-color frequency mixing has been studied in a laser ablation boron carbide plasma. • A space- and time-resolved study mapped the nonlinear optical species in the plasma. • The nonlinear process maximizes when charge recombination is expected to be completed. • Neutral atoms and small molecules are the main nonlinear species in this medium. • Evidence points to six-wave mixing as the most likely process. - Abstract: Nonlinear frequency mixing induced by a bichromatic field (1064 nm + 532 nm obtained from a Q-switched Nd:YAG laser) in a boron carbide (B{sub 4}C) plasma generated through laser ablation under vacuum is explored. A UV beam at the frequency of the fourth harmonic of the fundamental frequency (266 nm) was generated. The dependence of the efficiency of the process as function of the intensities of the driving lasers differs from the expected behavior for four-wave mixing, and point toward a six-wave mixing process. The frequency mixing process was strongly favored for parallel polarizations of the two driving beams. Through spatiotemporal mapping, the conditions for maximum efficiency were found for a significant delay from the ablation event (200 ns), when the medium is expected to be a low-ionized plasma. No late components of the harmonic signal were detected, indicating a largely atomized medium.

  14. Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties

    Science.gov (United States)

    Echeverria, Elena; Dong, Bin; Peterson, George; Silva, Joseph P.; Wilson, Ethiyal R.; Sky Driver, M.; Jun, Young-Si; Stucky, Galen D.; Knight, Sean; Hofmann, Tino; Han, Zhong-Kang; Shao, Nan; Gao, Yi; Mei, Wai-Ning; Nastasi, Michael; Dowben, Peter A.; Kelber, Jeffry A.

    2016-09-01

    The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios ~3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV-2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of ~350 µs compared to values of  ⩽35 µs for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of ~0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron-hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.

  15. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Sørensen, P. G.; Björkdahl, O.;

    2006-01-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using...

  16. Effect of boron carbide on primary crystallization of chromium cast iron

    Directory of Open Access Journals (Sweden)

    A. Studnicki

    2008-04-01

    Full Text Available In the paper results of the influence of boron carbide (B4C as inoculant of abrasion-resisting chromium cast iron (about 2,8% carbon and 18% chromium on primary crystallization researches are presented. Boron carbide dispersion was introduced at the bottom of pouring ladle before tap of liquid cast iron. In this investigations were used three different quantities of inoculant in amounts 0,1%; 0,2% and 0,3% with relation to bath weight. It has been demonstrated that such small additions of boron carbide change primary crystallization parameters, particularly temperature characteristic of process, their time and kinetics.

  17. Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

    Science.gov (United States)

    Ponomarev, V. I.; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I.

    2015-09-01

    Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide В15- х С х , (1.5 ≤ x ≤ 3) and its magnesium derivative C4B25Mg1.42. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from В12.9С2.1 to В12.4С2.6.

  18. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be propo......Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could...

  19. Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites

    OpenAIRE

    A.O. Addemir; A.C. Akarsu; A.B. Tugrul; B. Buyuk

    2012-01-01

    Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the expe...

  20. Size-scaling of tensile failure stress in boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, Andrew A [ORNL; Kirkland, Timothy Philip [ORNL; Strong, Kevin T [ORNL; Jadaan, Osama M. [University of Wisconsin, Platteville; Thompson, G. A. [U.S. Army Dental and Trauma Research Detachment, Greak Lakes

    2010-01-01

    Weibull strength-size-scaling in a rotary-ground, hot-pressed boron carbide is described when strength test coupons sampled effective areas from the very small (~ 0.001 square millimeters) to the very large (~ 40,000 square millimeters). Equibiaxial flexure and Hertzian testing were used for the strength testing. Characteristic strengths for several different specimen geometries are analyzed as a function of effective area. Characteristic strength was found to substantially increase with decreased effective area, and exhibited a bilinear relationship. Machining damage limited strength as measured with equibiaxial flexure testing for effective areas greater than ~ 1 mm2 and microstructural-scale flaws limited strength for effective areas less than 0.1 mm2 for the Hertzian testing. The selections of a ceramic strength to account for ballistically-induced tile deflection and to account for expanding cavity modeling are considered in context with the measured strength-size-scaling.

  1. Mode Grüneisen parameters of boron carbide

    Science.gov (United States)

    Werheit, Helmut; Manghnani, Murli H.; Kuhlmann, Udo; Hushur, Anwar; Shalamberidze, Sulkhan

    2017-10-01

    IR- and Raman-active phonons of boron carbide and the mode Grüneisen parameters γ related are studied concerning their dependence on chemical composition, temperatures between 30 and 800 K and pressures up to ∼70 GPa. Most bulk phonons yield γ between +1.5 and - 1.5: those related to icosahedra yield γ = 0.8(3). Surface phonons are distinguished by considerably higher γ. Negative γ of chain bending modes supports the assumption that the chain center buckles out under pressure. Some striking specific mode Grüneisen parameters are explained. Pressure-dependent bond lengths suggest the reversible high-pressure phase transition to be second order.

  2. Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility.

    Science.gov (United States)

    An, Qi; Goddard, William A

    2014-12-01

    Boron carbide (B4C) is a hard material whose value for extended engineering applications such as body armor; is limited by its brittleness under impact. To improve the ductility while retaining hardness, we used density functional theory to examine modifying B4C ductility through microalloying. We found that replacing the CBC chain in B4C with Si-Si, denoted as (B11Cp)-Si2, dramatically improves the ductility, allowing a continuous shear to a large strain of 0.802 (about twice of B4C failure strain) without brittle failure. Moreover, (B11C)-Si2 retains low density and high hardness. This ductility improvement arises because the Si-Si linkages enable the icosahedra accommodate additional shear by rotating instead of breaking bonds.

  3. Dynamical conductivity of boron carbide: heavily damped plasma vibrations.

    Science.gov (United States)

    Werheit, Helmut; Gerlach, Guido

    2014-10-22

    The FIR reflectivity spectra of boron carbide, measured down to ω~10 cm(-1) between 100 and 800 K, are essentially determined by heavily damped plasma vibrations. The spectra are fitted applying the classical Drude-Lorentz theory of free carriers. The fitting Parameter Π=ωp/ωτ yields the carrier densities, which are immediately correlated with the concentration of structural defects in the homogeneity range. This correlation is proved for band-type and hopping conductivity. The effective mass of free holes in the valence band is estimated at m*/me~2.5. The mean free path of the free holes has the order of the cell parameters.

  4. Frequency mixing in boron carbide laser ablation plasmas

    Science.gov (United States)

    Oujja, M.; Benítez-Cañete, A.; Sanz, M.; Lopez-Quintas, I.; Martín, M.; de Nalda, R.; Castillejo, M.

    2015-05-01

    Nonlinear frequency mixing induced by a bichromatic field (1064 nm + 532 nm obtained from a Q-switched Nd:YAG laser) in a boron carbide (B4C) plasma generated through laser ablation under vacuum is explored. A UV beam at the frequency of the fourth harmonic of the fundamental frequency (266 nm) was generated. The dependence of the efficiency of the process as function of the intensities of the driving lasers differs from the expected behavior for four-wave mixing, and point toward a six-wave mixing process. The frequency mixing process was strongly favored for parallel polarizations of the two driving beams. Through spatiotemporal mapping, the conditions for maximum efficiency were found for a significant delay from the ablation event (200 ns), when the medium is expected to be a low-ionized plasma. No late components of the harmonic signal were detected, indicating a largely atomized medium.

  5. Directional amorphization of boron carbide subjected to laser shock compression

    Science.gov (United States)

    Zhao, Shiteng; Kad, Bimal; Remington, Bruce A.; LaSalvia, Jerry C.; Wehrenberg, Christopher E.; Behler, Kristopher D.; Meyers, Marc A.

    2016-10-01

    Solid-state shock-wave propagation is strongly nonequilibrium in nature and hence rate dependent. Using high-power pulsed-laser-driven shock compression, unprecedented high strain rates can be achieved; here we report the directional amorphization in boron carbide polycrystals. At a shock pressure of 45˜50 GPa, multiple planar faults, slightly deviated from maximum shear direction, occur a few hundred nanometers below the shock surface. High-resolution transmission electron microscopy reveals that these planar faults are precursors of directional amorphization. It is proposed that the shear stresses cause the amorphization and that pressure assists the process by ensuring the integrity of the specimen. Thermal energy conversion calculations including heat transfer suggest that amorphization is a solid-state process. Such a phenomenon has significant effect on the ballistic performance of B4C.

  6. Preliminary study of neutron absorption by concrete with boron carbide addition

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Zali, Nurazila Mat; Ahmad, Megat Harun Al Rashid Megat; Yazid, Hafizal [Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Ariffin, Fatin Nabilah Tajul; Ahmad, Sahrim [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor (Malaysia); Hamid, Roszilah [Department of Civil and Structural Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor (Malaysia); Mohamed, Abdul Aziz [College of Engineering, Universiti Tenaga National, Jalan Ikram-Uniten, 43000 Kajang, Selangor (Malaysia)

    2014-02-12

    Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates the most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.

  7. The effects of stoichiometry on the mechanical properties of icosahedral boron carbide under loading.

    Science.gov (United States)

    Taylor, DeCarlos E; McCauley, James W; Wright, T W

    2012-12-19

    The effects of stoichiometry on the atomic structure and the related mechanical properties of boron carbide (B(4)C) have been studied using density functional theory and quantum molecular dynamics simulations. Computational cells of boron carbide containing up to 960 atoms and spanning compositions ranging from 6.7% to 26.7% carbon were used to determine the effects of stoichiometry on the atomic structure, elastic properties, and stress-strain response as a function of hydrostatic, uniaxial, and shear loading paths. It was found that different stoichiometries, as well as variable atomic arrangements within a fixed stoichiometry, can have a significant impact on the yield stress of boron carbide when compressed uniaxially (by as much as 70% in some cases); the significantly reduced strength of boron carbide under shear loading is also demonstrated.

  8. Synthesis of boron carbide nano particles using polyvinyl alcohol and boric acid

    Directory of Open Access Journals (Sweden)

    Amir Fathi

    2012-03-01

    Full Text Available In this study boron carbide nano particles were synthesized using polyvinyl alcohol and boric acid. First, initial samples with molar ratio of PVA : H3BO3 = 2.7:2.2 were prepared. Next, samples were pyrolyzed at 600, 700 and 800°C followed by heat treatment at 1400, 1500 and 1600°C. FTIR analysis was implemented before and after pyrolysis in order to study the reaction pathway. XRD technique was used to study the composition of produced specimens of boron carbide. Moreover, SEM and PSA analysis were also carried out to study the particle size and morphology of synthesized boron carbide. Finally, according to implemented tests and analyses, carbon-free boron carbide nano particles with an average size of 81 nm and mainly spherical morphology were successfully produced via this method.

  9. Study on Processing Conditions of Aluminum Matrix Composites Reinforced with Boron Carbide Particles

    Institute of Scientific and Technical Information of China (English)

    Fu Xueying; Zhang Hong; Xi Huizhi; Yi Xiaosu

    2004-01-01

    Different pre-heating of boron carbide particles for reinforcement and different processing conditions were studied in this work. Being one of the most cost-effective industrial methods, conventional melt stir-casting route was utilized.Result showed that the boron carbide particles distributed well for a suitable pre-heating temperature and processed in air.No reaction product was found at the A1-B4C interfaces at the resolution limit of SEM used in that way.

  10. Standard specification for nuclear-grade boron carbide powder

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2009-01-01

    1.1 This specification defines the chemical and physical requirements for boron carbide powder intended for a variety of nuclear applications. Because each application has a different need for impurity and boron requirements, three different chemical compositions of powder are specified. In using this specification, it is necessary to dictate which type of powder is intended to be used. In general, the intended applications for the various powder types are as follows: 1.1.1 Type 1—For use as particulate material in nuclear reactor core applications. 1.1.2 Type 2—Powder that will be further processed into a fabricated shape for use in a nuclear reactor core or used in non-core applications when the powder directly or indirectly may cause adverse effects on structural components, such as halide stress corrosion of stainless steel. 1.1.3 Type 3—Powder that will be used for non-core applications or special in-core applications. 1.2 The values stated in SI units are to be regarded as standard. No other ...

  11. Phase diagram of boron carbide with variable carbon composition

    Science.gov (United States)

    Yao, Sanxi; Gao, Qin; Widom, Michael

    2017-02-01

    Boron carbide exhibits intrinsic substitutional disorder over a broad composition range. The structure consists of 12-atom icosahedra placed at the vertices of a rhombohedral lattice, together with a 3-atom chain along the threefold axis. In the high-carbon limit, one or two carbon atoms can replace boron atoms on the icosahedra while the chains are primarily of type C-B-C. We fit an interatomic pair interaction model to density-functional-theory total energies to investigate the substitutional carbon disorder. Monte Carlo simulations with sampling improved by replica exchange and augmented by two-dimensional multiple histogram analysis predict three phases. The low-temperature, high-carbon-composition monoclinic C m structure disorders through a pair of phase transitions, first via an Ising-like transition to a monoclinic centrosymmetric state with space group C 2 /m , then via a first-order three-state Potts-like transition to the experimentally observed rhombohedral R 3 ¯m symmetry.

  12. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

    Science.gov (United States)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  13. Synthesis of boron carbide nanoflakes via a bamboo-based carbon thermal reduction method

    Energy Technology Data Exchange (ETDEWEB)

    Du, Jun [College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China); Li, Qianqian [Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027 (China); Xia, Yang; Cheng, Xuejuan; Gan, Yongping; Huang, Hui [College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China); Zhang, Wenkui, E-mail: msechem@zjut.edu.cn [College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China); Tao, Xinyong, E-mail: tao@zjut.edu.cn [College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China)

    2013-12-25

    Graphical abstract: B{sub 4}C nanoflakes were synthesized via a facile and cost-effective bamboo-based carbon thermal reduction method. Highlights: •Boron carbide nanoflakes were successfully synthesized via a bamboo-based carbon thermal reduction method. •A fluoride-assisted VLS nucleation and VS growth mechanism were proposed. •We studied the resistivity of boron carbide nanoflakes via in situ TEM techniques for the first time. -- Abstract: Boron carbide nanoflakes have been successfully synthesized by a facile and cost-effective bamboo-based carbon thermal reduction method. The majority of the boron carbide products exhibited a flake-like morphology with lateral dimensions of 0.5–50 μm in width and more than 50 μm in length, while the thickness was less than 150 nm. The structural, morphological, and elemental analyses demonstrated that these nanoflakes grew via the fluoride-assisted vapor–liquid–solid combined with vapor–solid growth mechanism. The corresponding growth model was proposed. In addition, the electrical property of individual boron carbide nanoflake was investigated by an in situ two point method inside a transmission electron microscope. The resistivity of boron carbide nanoflakes was measured to be 0.14 MΩ cm.

  14. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

    Science.gov (United States)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-02

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  15. Controlling the Morphology and Oxidation Resistance of Boron Carbide Synthesized Via Carbothermic Reduction Reaction

    Science.gov (United States)

    Ahmed, Yasser M. Z.; El-Sheikh, Said M.; Ewais, Emad M. M.; Abd-Allah, Asmaa A.; Sayed, Said A.

    2017-03-01

    Boron carbide powder was synthesized from boric acid and lactose mixtures via easy procedure. Boric acid and lactose solution mixtures were roasted in stainless steel pot at 280 °C for 24 h. Boron carbide was obtained by heating the roasted samples under flowing of industrial argon gas at 1500 °C for 3 h. The amount of borate ester compound in the roasted samples was highly influenced by the boron/carbon ratio in the starting mixtures and plays a versatile role in the produced boron carbide. The high-purity boron carbide powder was produced with a sample composed of lowest boron/carbon ratio of 1:1 without calcination step. Particle morphology was changed from nano-needles like structure of 8-10 nm size with highest carbon ratio mixture to spherical shape of >150 nm size with lowest one. The oxidation resistance performance of boron carbide is highly dependent on the morphology and grain size of the synthesized powder.

  16. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could...

  17. Effect of boron on the microstructure and mechanical properties of carbidic austempered ductile iron

    Energy Technology Data Exchange (ETDEWEB)

    Peng Yuncheng; Jin Huijin [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Liu Jinhai, E-mail: pyc_wanhj@163.com [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China); Li Guolu [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132 (China)

    2011-11-25

    Highlights: {yields} Boron are applied to carbidic austempered ductile iron (CADI). {yields} Boron microalloying CADI is a new high hardenability of wear-resistant cast iron. {yields} Addition of boron to CADI significantly improves hardenability. {yields} Effect of boron on the CADI grinding ball were investigated. {yields} Optimum property is obtained when boron content at 0.03 wt%. - Abstract: Carbidic austempered ductile iron (CADI) castings provide a unique combination of high hardness and toughness coupled with superior wear resistance properties, but their hardenability restricts their range of applications. The purpose of this study was to investigate the influence of boron on the microstructure and mechanical properties of CADI. The experimental results indicate that the CADI comprises graphite nodules, which are dispersive boron-carbides that are distributed in the form of strips, and the matrix is a typical ausferritic matrix. Microscopic amounts of boron can improve the hardenability of CADI, but higher boron content reduces the hardenability and toughness of CADI. The results are discussed in the context of the influence of boron content on the microstructure and mechanical properties of grinding balls.

  18. Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic

    Science.gov (United States)

    2014-08-01

    Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic by John D Clayton ARL-RP...Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic John D Clayton Weapons and Materials Research Directorate, ARL...and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  19. Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires

    Institute of Scientific and Technical Information of China (English)

    FU Xin; JIANG Jun; LIU Chao; YU Zhi-Yang; Steffan LEA; YUAN Jun

    2009-01-01

    We report a preferential growth of boron carbide nanowires with a Eve-fold twinned internal structure.The nanowires are found to grow catalytically via iron boron nanoparticles,but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines.We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes,followed by rapid spreading of atomic steps.This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.

  20. Functionalization and cellular uptake of boron carbide nanoparticles. The first step toward T cell-guided boron neutron capture therapy.

    Science.gov (United States)

    Mortensen, M W; Björkdahl, O; Sørensen, P G; Hansen, T; Jensen, M R; Gundersen, H J G; Bjørnholm, T

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded with boron-containing nanoparticles can hinder the growth of neighboring cells upon neutron irradiation. This could provide the first step toward a T cell-guided boron neutron capture therapy.

  1. Lattice dynamics of {alpha} boron and of boron carbide; Proprietes vibrationnelles du bore {alpha} et du carbure de bore

    Energy Technology Data Exchange (ETDEWEB)

    Vast, N

    1999-07-01

    The atomic structure and the lattice dynamics of {alpha} boron and of B{sub 4}C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In {alpha} boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B{sub 4}C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  2. Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guoliang [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Abbott, Julia K.C.; Brasfield, John D. [Department of Chemistry, The University of Tennessee, Knoxville, TN 37996 (United States); Liu, Peizhi [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Dale, Alexis [Department of Chemistry, The University of Tennessee, Knoxville, TN 37996 (United States); Duscher, Gerd [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Rack, Philip D. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Feigerle, Charles S., E-mail: cfeigerl@tennessee.edu [Department of Chemistry, The University of Tennessee, Knoxville, TN 37996 (United States)

    2015-02-01

    Highlights: • Crystalline boron phosphide was grown on vicinal 4H (0 0 0 1)-SiC surfaces. • The microstructure evolution of defects generated at the interface was characterized by transmission electron microscopy. • The evolution of lattice distortion and strain are determined. - Abstract: Boron phosphide (BP) is a material of interest for development of a high-efficiency solid-state thermal neutron detector. For a thick film-based device, microstructure evolution is key to the engineering of material synthesis. Here, we report epitaxial BP films grown on silicon carbide with vicinal steps and provide a detailed analysis of the microstructure evolution and strain relief. The BP film is epitaxial in the near-interface region but deviates from epitaxial growth as the film develops. Defects such as coherent and incoherent twin boundaries, dislocation loops, stacking faults concentrate in the near-interface region and segment this region into small domains. The formation of defects in this region do not fully release the strain originated from the lattice mismatch. Large grains emerge above the near-interface region and grain boundaries become the main defects in the upper part of the BP film.

  3. Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites

    Directory of Open Access Journals (Sweden)

    A.O. Addemir

    2012-03-01

    Full Text Available Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the experiments which has a single gamma-peak at 0.662 MeV. Gamma transmission technique was used for the measurements. The effects of titanium diboride particle size on radiation attenuation of titanium diboride reinforced boron carbide-silicon carbide composites were evaluated in related with gamma transmission and the results of the experiments were interpreted and compared with each other. Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the experiments which has a single gamma-peak at 0.662 MeV. Gamma transmission technique was used for the measurements. The effects of titanium diboride particle size on radiation attenuation of titanium diboride reinforced boron carbide-silicon carbide composites were evaluated in related with gamma transmission and the results of the experiments were interpreted and compared with each other. Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion

  4. PROCESSING AND PROPERTIES OF BORON CARBIDE WITH HAFNIUM DIBORIDE ADDITION

    Directory of Open Access Journals (Sweden)

    K. Sairam

    2016-10-01

    Full Text Available This article presents the results of investigations on densification, mechanical and electrical properties of boron carbide (B₄C with the addition of HfB₂. High dense B₄C-HfB₂ (2.5-30 wt.% composites were prepared by hot pressing at a temperature of 2173 K with 40 MPa mechanical pressure. The B₄C-HfB₂ composite mixture exhibited a better sintering aptitude compared with monolithic B₄C. Hardness and elastic modulus of B₄C-HfB₂ composites were measured to be in the range 36-28GPa and 465-525GPa respectively. Indentation fracture toughness of B₄C increased with HfB₂ content and obtained a maximum of 7 MPa.m 1/2 at 30 wt.% HfB₂, which is ∼3 times higher than the monolithic B₄C. Crack deflection was identified to be the major toughening mechanism in the developed composite. B₄C-10wt.% HfB₂ composite exhibited a maximum electrical conductivity of 7144 Ω-1m-1 which is 26% higher than the conductivity of monolithic B₄C (5639 Ω-1m-1 at 1373 K.

  5. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-09-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  6. Tribological behavior of hot-pressed boron carbide with oxidation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The oxidation behavior at 973-1 273 K and the effect of oxidation on the room-temperature tribological properties of hot-pressed boron carbide ceramic were investigated. Oxidized samples were studied by X-ray diffractometer and scanning electron microscopy. It is demonstrated that the oxidation results in the formation of a thin transparent B2O3 film, and the oxide film is severely cracked during cooling due to the thermal expansion mismatch between the oxide film and B4C substrate. B2O3 reacts with moisture in air to form boric acid, which is a kind of solid lubricant. The sliding friction factors of oxidized B4C pair are about 0.05-0.08, compared to 0.25-0.35 of the as-received B4C pair. When the oxidation temperature is up to 1 273 K, severe unstability and increase of friction factor are observed. Visual inspection of the wear track reveals that the lubricant film is broken and some debris particles occur on and around the rubbing surfaces, because the friction interface is rough by the severe etching of grain boundaries.

  7. Polymerization kinetics of boron carbide/epoxy composites

    Energy Technology Data Exchange (ETDEWEB)

    Abenojar, J., E-mail: abenojar@ing.uc3m.es [Materials Performance Group, Materials Science and Engineering Department, IAAB, Universidad Carlos III de Madrid, Av. Universidad, 30, 28911 Leganés (Spain); Encinas, N. [Materials Performance Group, Materials Science and Engineering Department, IAAB, Universidad Carlos III de Madrid, Av. Universidad, 30, 28911 Leganés (Spain); Real, J.C. del [Department of Mechanical Engineering, Universidad Pontificia Comillas, C/ Alberto Aguilera 23, 28015 Madrid (Spain); Martínez, M.A. [Materials Performance Group, Materials Science and Engineering Department, IAAB, Universidad Carlos III de Madrid, Av. Universidad, 30, 28911 Leganés (Spain)

    2014-01-10

    Graphical abstract: - Highlights: • Conversion degree and rate reaction of the curing reaction increase with temperature. • At low temperature, the particles exhibit catalytic effect, similar to the OH groups. • At high temperature, B{sub 4}C micro-particles increase the n-order rate reaction. • The diffusion constant diminishes with temperature for all the studied materials. • The autocatalytic reaction is favored by the effect of 6% nanoparticles. - Abstract: This study employs Differential Scanning Calorimetry (DSC) technique and focuses on the curing kinetics and the activation energy of the commercial epoxy resin (which cures at room temperature for 12 h) filled with boron carbide particles (B{sub 4}C) in different amount (6 and 12 wt%) and particle size (60 nm, 7 and 23 μm). An isothermal dwell at different temperatures (25, 35 and 50 °C) was used for 180 min. Thereafter, the temperature is increased by 5 °C min{sup −1} up to 200 °C to complete the curing process. Conversion degree is calculated by combining both methods. The kinetic constant and the reaction order are calculated using Kamal's equation with diffusion control. Consequently, the activation energy is computed assuming Arrhenius’ equation.The results show a significant influence of the temperature on the reaction mechanism. Furthermore, polymerization kinetics is affected by B{sub 4}C additions depending on the amount and size of the added particles.

  8. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-11-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  9. Measurements and simulations of boron carbide as degrader material for proton therapy

    Science.gov (United States)

    Gerbershagen, Alexander; Baumgarten, Christian; Kiselev, Daniela; van der Meer, Robert; Risters, Yannic; Schippers, Marco

    2016-07-01

    We report on test measurements using boron carbide (B4C) as degrader material in comparison with the conventional graphite, which is currently used in many proton therapy degraders. Boron carbide is a material of lower average atomic weight and higher density than graphite. Calculations predict that, compared to graphite, the use of boron carbide results in a lower emittance behind the degrader due to the shorter degrader length. Downstream of the acceptance defining collimation system we expect a higher beam transmission, especially at low beam energies. This is of great interest in proton therapy applications as it allows either a reduction of the beam intensity extracted from the cyclotron leading to lower activation or a reduction of the treatment time. This paper summarizes the results of simulations and experiments carried out at the PROSCAN facility at the Paul Scherrer Institute1. The simulations predict an increase in the transmitted beam current after the collimation system of approx. 30.5% for beam degradation from 250 to 84 MeV for a boron carbide degrader compared to graphite. The experiment carried out with a boron carbide block reducing the energy to 84 MeV yielded a transmission improvement of 37% compared with the graphite degrader set to that energy.

  10. STURCTURAL CHARACTERISTICS AND QUANTUM CHEMISTRY CALCULATION OF Al-DOPED BORON CARBIDES

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Structural characteristics, chemical bonds and thermoelectric properties of Al-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation Xα method. The calculations show that Al atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Al to substitute B or C atom in the centers of the chain or in the icosahedra. A representative structural unit containing an Al atom is [C-B-Al]ε+-[B11C]ε-, while the structural unit without Al is [C-B-B(C)]ε--[B11C]ε+, and the coexistence of these two different structural units makes the electrical conductivity increased. As the covalent bond of Al-B or Al-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Al is added into boron carbides. With the electrical conductivity increasing and the thermal conductivity decreases, Al doping has significant effect on thermoelectric properties of boron carbides.

  11. Measurements and simulations of boron carbide as degrader material for proton therapy.

    Science.gov (United States)

    Gerbershagen, Alexander; Baumgarten, Christian; Kiselev, Daniela; van der Meer, Robert; Risters, Yannic; Schippers, Marco

    2016-07-21

    We report on test measurements using boron carbide (B4C) as degrader material in comparison with the conventional graphite, which is currently used in many proton therapy degraders. Boron carbide is a material of lower average atomic weight and higher density than graphite. Calculations predict that, compared to graphite, the use of boron carbide results in a lower emittance behind the degrader due to the shorter degrader length. Downstream of the acceptance defining collimation system we expect a higher beam transmission, especially at low beam energies. This is of great interest in proton therapy applications as it allows either a reduction of the beam intensity extracted from the cyclotron leading to lower activation or a reduction of the treatment time. This paper summarizes the results of simulations and experiments carried out at the PROSCAN facility at the Paul Scherrer Institute(1). The simulations predict an increase in the transmitted beam current after the collimation system of approx. 30.5% for beam degradation from 250 to 84 MeV for a boron carbide degrader compared to graphite. The experiment carried out with a boron carbide block reducing the energy to 84 MeV yielded a transmission improvement of 37% compared with the graphite degrader set to that energy.

  12. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    OpenAIRE

    2014-01-01

    Poly-crystalline cubic boron nitride (PCBN) is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM) is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materia...

  13. Superconductivity in boron carbide? Clarification by low-temperature MIR/FIR spectra.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U

    2011-11-01

    The electronic structure and phonon density of B(13)B(2) boron carbide calculated by Calandra et al (2004 Phys. Rev. B 69 224505) defines this compound as metallic, and the authors predict superconductivity with T(C)s up to 36.7 K. Their results are affected by the same deficiencies as former band structure calculations on boron carbides based on hypothetical crystal structures deviating significantly from the real ones. We present optical mid IR/far IR (MIR/FIR) spectra of boron carbide with compositions between B(4.3)C and B(10.37)C, evidencing semiconducting behaviour at least down to 30 K. There is no indication of superconductivity. The spectra yield new information on numerous localized gap states close to the valence band edge.

  14. Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ponomarev, V. I., E-mail: ksv17@ism.ac.ru; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I. [Russian Academy of Sciences, Institute of Structural Macrokinetics and Materials Science (Russian Federation)

    2015-09-15

    Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide B{sub 15–x}C{sub x}, (1.5 ≤ x ≤ 3) and its magnesium derivative C{sub 4}B{sub 25}Mg{sub 1.42}. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from B{sub 12.9}C{sub 2.1} to B{sub 12.4}C{sub 2.6}.

  15. Ultrafine-grained Aluminm and Boron Carbide Metal Matrix Composites

    Science.gov (United States)

    Vogt, Rustin

    Cryomilling is a processing technique used to generate homogenously distributed boron carbide (B4C) particulate reinforcement within an ultrafine-grained aluminum matrix. The motivation behind characterizing a composite consisting of cryomilled aluminum B4C metal matrix composite is to design and develop a high-strength, lightweight aluminum composite for structural and high strain rate applications. Cryomilled Al 5083 and B4C powders were synthesized into bulk composite by various thermomechanical processing methods to form plate and extruded geometries. The effects of processing method on microstructure and mechanical behavior for the final consolidated composite were investigated. Cryomilling for extended periods of time in liquid nitrogen has shown to increase strength and thermal stability. The effects associated with cryomilling with stearic acid additions (as a process-control agent) on the degassing behavior of Al powders is investigated and results show that the liberation of compounds associated with stearic acid were suppressed in cryomilled Al powders. The effect of thermal expansion mismatch strain on strengthening due to geometrically necessary dislocations resulting from quenching is investigated and found not to occur in bulk cryomilled Al 5083 and B 4C composites. Previous cryomilled Al 5083 and B4C composites have exhibited ultrahigh strength associated with considerable strain-to-failure (>14 pct.) at high strain rates (>103/s) during mechanical testing, but only limited strain-to-failure (˜0.75 pct.) at quasi-static strain rates (10-3/s). The increased strain to failure at high strain rates is attributed to micro-flaw developments, including kinking, extensive axial splitting, and grain growth were observed after high strain rate deformation, and the significance of these mechanisms is considered.

  16. Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic

    Directory of Open Access Journals (Sweden)

    John D. Clayton

    2014-07-01

    Full Text Available A nonlinear continuum phase field theory is developed to describe amorphization of crystalline elastic solids under shear and/or pressure loading. An order parameter describes the local degree of crystallinity. Elastic coefficients can depend on the order parameter, inelastic volume change may accompany the transition from crystal to amorphous phase, and transitional regions parallel to bands of amorphous material are penalized by interfacial surface energy. Analytical and simple numerical solutions are obtained for an idealized isotropic version of the general theory, for an element of material subjected to compressive and/or shear loading. Solutions compare favorably with experimental evidence and atomic simulations of amorphization in boron carbide, demonstrating the tendency for structural collapse and strength loss with increasing shear deformation and superposed pressure.

  17. A thermo dynamical model for the shape and size effect on melting of boron carbide nanoparticles.

    Science.gov (United States)

    Antoniammal, Paneerselvam; Arivuoli, Dakshanamoorthy

    2012-02-01

    The size and shape dependence of the melting temperature of Boron Carbide (B4C) nanoparticles has been investigated with a numerical thermo dynamical approach. The problem considered in this paper is the inward melting of nanoparticles with spherical and cylindrical geometry. The cylindrical Boron Carbide (B4C) nanoparticles, whose melting point has been reported to decrease with decreasing particle radius, become larger than spherical shaped nanoparticle. Comparative investigation of the size dependence of the melting temperature with respect to the two shapes is also been done. The melting temperature obtained in the present study is approximately a dealing function of radius, in a good agreement with prediction of thermo dynamical model.

  18. Elastic properties of B-C-N films grown by N{sub 2}-reactive sputtering from boron carbide targets

    Energy Technology Data Exchange (ETDEWEB)

    Salas, E.; Jiménez Riobóo, R. J.; Jiménez-Villacorta, F.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid (Spain); Sánchez-Marcos, J. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid (Spain); Dept. Química-Física Aplicada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Muñoz-Martín, A.; Prieto, J. E.; Joco, V. [Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2013-12-07

    Boron-carbon-nitrogen films were grown by RF reactive sputtering from a B{sub 4}C target and N{sub 2} as reactive gas. The films present phase segregation and are mechanically softer than boron carbide films (a factor of more than 2 in Young's modulus). This fact can turn out as an advantage in order to select buffer layers to better anchor boron carbide films on substrates eliminating thermally induced mechanical tensions.

  19. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  20. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    Directory of Open Access Journals (Sweden)

    Kuruc Marcel

    2014-12-01

    Full Text Available Poly-crystalline cubic boron nitride (PCBN is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics. This contribution investigates this advanced machining method during machining of PCBN.

  1. Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

    Science.gov (United States)

    Serra, R.; Oliveira, V.; Oliveira, J. C.; Kubart, T.; Vilar, R.; Cavaleiro, A.

    2015-03-01

    Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm2. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under different circumstances. Processing of the amorphous films at low fluence (72 μJ) results in LIPSS formation only on localized spots on the film surface. LIPSS formation was also observed on the top of the undulations formed after laser processing with 78 μJ of the amorphous film deposited at 800 °C. Finally, large-area homogeneous LIPSS coverage of the boron carbide crystalline films surface was achieved within a large range

  2. Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

    Energy Technology Data Exchange (ETDEWEB)

    Serra, R., E-mail: ricardo.serra@dem.uc.pt [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Oliveira, V. [ICEMS-Instituto de Ciência e Engenharia de Materiais e Superfícies, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Oliveira, J.C. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Kubart, T. [The Ångström Laboratory, Solid State Electronics, P.O. Box 534, SE-751 21 Uppsala (Sweden); Vilar, R. [Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Instituto Superior Técnico, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal)

    2015-03-15

    Highlights: • Large-area LIPSS were formed by femtosecond laser processing B-C films surface. • The LIPSS spatial period increases with laser fluence (140–200 nm). • Stress-related sinusoidal-like undulations were formed on the B-C films surface. • The undulations amplitude (down to a few nanometres) increases with laser fluence. • Laser radiation absorption increases with surface roughness. - Abstract: Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm{sup 2}. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under

  3. Fluid flow phenomena in the generation of boron carbide suspensions in magnesium melts

    Science.gov (United States)

    Ilegbusi, O. J.; Szekely, J.

    1988-01-01

    A mathematical representation is developed for the behavior of moderately concentrated magnesium-boron carbide suspensions when subjected to electromagnetic stirring or mechanical agitation. A power-law relationship is employed for the apparent non-Newtonian viscosity of the suspension.

  4. Standard specification for nuclear-grade aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2005-01-01

    1.1 This specification applies to pellets composed of mixtures of aluminum oxide and boron carbide that may be ultimately used in a reactor core, for example, in neutron absorber rods. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

  5. Aluminum-titanium hydride-boron carbide composite provides lightweight neutron shield material

    Science.gov (United States)

    Poindexter, A. M.

    1967-01-01

    Inexpensive lightweight neutron shield material has high strength and ductility and withstands high internal heat generation rates without excessive thermal stress. This composite material combines structural and thermal properties of aluminum, neutron moderating properties of titanium hydride, and neutron absorbing characteristics of boron carbide.

  6. An experimental investigation of wire electrical discharge machining of hot-pressed boron carbide

    Directory of Open Access Journals (Sweden)

    Ravindranadh Bobbili

    2015-12-01

    Full Text Available The present work discusses the experimental study on wire-cut electric discharge machining of hot-pressed boron carbide. The effects of machining parameters, such as pulse on time (TON, peak current (IP, flushing pressure (FP and spark voltage on material removal rate (MRR and surface roughness (Ra of the material, have been evaluated. These parameters are found to have an effect on the surface integrity of boron carbide machined samples. Wear rate of brass wire increases with rise in input energy in machining of hot-pressed boron carbide. The surfaces of machined samples were examined using scanning electron microscopy (SEM. The influence of machining parameters on mechanism of MRR and Ra was described. It was demonstrated that higher TON and peak current deteriorate the surface finish of boron carbide samples and result in the formation of large craters, debris and micro cracks. The generation of spherical particles was noticed and it was attributed to surface tension of molten material. Macro-ridges were also observed on the surface due to protrusion of molten material at higher discharge energy levels.

  7. Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lumin [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science; Wierschke, Jonathan Brett [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science

    2015-04-08

    The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H3BO3). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

  8. Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

    Energy Technology Data Exchange (ETDEWEB)

    Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Buzhinskiy, O. I. [State Research Center Troitsk Institute for Innovation and Fusion Research (TRINITI) (Russian Federation); Grunin, A. V.; Gordeev, A. A.; Zakharov, A. M.; Kalachev, A. M.; Sadovskiy, Ya. A.; Shigin, P. A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2015-12-15

    A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

  9. Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

    Science.gov (United States)

    Airapetov, A. A.; Begrambekov, L. B.; Buzhinskiy, O. I.; Grunin, A. V.; Gordeev, A. A.; Zakharov, A. M.; Kalachev, A. M.; Sadovskiy, Ya. A.; Shigin, P. A.

    2015-12-01

    A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400-1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

  10. Electron tunneling through ultrathin boron nitride crystalline barriers.

    Science.gov (United States)

    Britnell, Liam; Gorbachev, Roman V; Jalil, Rashid; Belle, Branson D; Schedin, Fred; Katsnelson, Mikhail I; Eaves, Laurence; Morozov, Sergey V; Mayorov, Alexander S; Peres, Nuno M R; Neto, Antonio H Castro; Leist, Jon; Geim, Andre K; Ponomarenko, Leonid A; Novoselov, Kostya S

    2012-03-14

    We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.

  11. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy.

    Science.gov (United States)

    Mortensen, M W; Sørensen, P G; Björkdahl, O; Jensen, M R; Gundersen, H J G; Bjørnholm, T

    2006-03-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using transmission electron microscopy, photon correlation spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, vibrational spectroscopy, gel electrophoresis and chemical assays and reveal profound changes in surface chemistry and structural characteristics. In vitro thermal neutron irradiation of B16 melanoma cells incubated with sub-100 nm nanoparticles (381.5 microg/g (10)B) induces complete cell death. The nanoparticles alone induce no toxicity.

  12. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Science.gov (United States)

    Chaudhari, Pradip; Singh, Arvind; Topkar, Anita; Dusane, Rajiv

    2015-04-01

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and 10B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 μm and 0.5 μm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  13. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhari, Pradip, E-mail: pradipcha@gmail.com [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India); Singh, Arvind, E-mail: arvindsingh1884@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Topkar, Anita, E-mail: anita.topkar@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Dusane, Rajiv, E-mail: rodusane@iitb.ac.in [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India)

    2015-04-11

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and {sup 10}B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 µm and 0.5 µm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  14. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  15. Thermal-shock Resistance of a Ceramic Comprising 60 Percent Boron Carbide and 40 Percent Titanium Diboride

    Science.gov (United States)

    Yeomans, C M; Hoffman, C A

    1953-01-01

    Thermal-shock resistance of a ceramic comprising 60 percent boron carbide and 40 percent titanium diboride was investigated. The material has thermal shock resistance comparable to that of NBS body 4811C and that of zirconia, but is inferior to beryllia, alumina, and titanium-carbide ceramals. It is not considered suitable for turbine blades.

  16. Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism

    Science.gov (United States)

    Ji, Wei; Rehman, Sahibzada Shakir; Wang, Weimin; Wang, Hao; Wang, Yucheng; Zhang, Jinyong; Zhang, Fan; Fu, Zhengyi

    2015-10-01

    A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties, including Vickers hardness of 37.8 GPa, flexural strength of 445.3 MPa and fracture toughness of 4.7 MPa•m0.5. Such a process should also facilitate the cost-effective preparation of other advanced ceramics for practical applications.

  17. Boron carbide (B{sub 4}C) coating. Deposition and testing

    Energy Technology Data Exchange (ETDEWEB)

    Azizov, E.; Barsuk, V. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Begrambekov, L., E-mail: lbb@plasma.mephi.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Buzhinsky, O. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Evsin, A.; Gordeev, A.; Grunin, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Klimov, N. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Kurnaev, V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Mazul, I. [Federal State Unitary Interprise Efremov Scientific Research Institute of Electrophysical Apparatus (NIIEFA Efremov), St-Peterburg (Russian Federation); Otroshchenko, V.; Putric, A. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Sadovskiy, Ya.; Shigin, P.; Vergazov, S.; Zakharov, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-08-15

    Boron carbide was proposed as a material of in-situ protecting coating for tungsten tiles of ITER divertor. To prove this concept the project including investigation of regimes of plasma deposition of B{sub 4}C coating on tungsten and tests of boron carbide layer in ITER-like is started recently. The paper contends the first results of the project. The results of B{sub 4}C coating irradiation by the plasma pulses of QSPU-T plasma accelerator are presented. The new device capable of B{sub 4}C film deposition on tungsten and testing of the films and materials with ITER-like heat loads and ion- and electron irradiation is described. The results of B{sub 4}C coating deposition and testing of both tungsten substrate and coating are shown and discussed.

  18. Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism.

    Science.gov (United States)

    Ji, Wei; Rehman, Sahibzada Shakir; Wang, Weimin; Wang, Hao; Wang, Yucheng; Zhang, Jinyong; Zhang, Fan; Fu, Zhengyi

    2015-10-27

    A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties, including Vickers hardness of 37.8 GPa, flexural strength of 445.3 MPa and fracture toughness of 4.7 MPa•m(0.5). Such a process should also facilitate the cost-effective preparation of other advanced ceramics for practical applications.

  19. Versatile Boron Carbide-Based Visual Obscurant Compositions for Smoke Munitions

    Science.gov (United States)

    2015-04-17

    ignition and are safe to handle. KEYWORDS: Smoke, Obscurants, Pyrotechnics, Boron carbide, Sustainable chemistry ■ INTRODUCTION Visible obscuration...laced with soot and chlorinated organic compounds. Smoke grenades containing these “HC” compositions have been responsible for several smoke...Robert A. Gilbert, Jr. 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) U.S. Army

  20. Surface energy and relaxation in boron carbide (101¯1) from first principles

    Science.gov (United States)

    Beaudet, Todd D.; Smith, John R.; Adams, Jane W.

    2015-10-01

    The surface energy of the boron carbide polytype B11Cp(CBC) for planar separations along {101¯1} was determined to be 3.21 J/m2 via first-principles density-functional computations. Surface atomic relaxations are relatively large, thereby lowering the surface energy significantly. The icosahedra are not intact on the surface, i.e., severed polyhedra are the lowest energy surface configuration. Good agreement was found with an experimental average fracture surface energy.

  1. High-temperature mechanical properties of aluminium alloys reinforced with boron carbide particles

    Energy Technology Data Exchange (ETDEWEB)

    Onoro, J. [Dept. Ingenieria y Ciencia de los Materiales, ETSI Industriales, Universidad Politecnica de Madrid, c/Jose Gutierrez Abascal 2, 28006 Madrid (Spain)], E-mail: javier.onoro@upm.es; Salvador, M.D. [Dept. Ingenieria Mecanica y de Materiales, ETSI Industriales, Universidad Politecnica de Valencia, Camino de Vera s/n, 46071 Valencia (Spain); Cambronero, L.E.G. [Dept. Ingenieria de Materiales, ETSI Minas, Universidad Politecnica de Madrid, c/Rios Rosas 21, 28003 Madrid (Spain)

    2009-01-15

    The mechanical properties of particulate-reinforced metal-matrix composites based on aluminium alloys (6061 and 7015) at high temperatures were studied. Boron carbide particles were used as reinforcement. All composites were produced by hot extrusion. The tensile properties and fracture analysis of these materials were investigated at room temperature and at high temperature to determine their ultimate strength and strain to failure. The fracture surface was analysed by scanning electron microscopy.

  2. From boron carbide to glass: Absorption of an elongated high-speed projectile in brittle materials

    Science.gov (United States)

    Rumyantsev, B. V.

    2016-09-01

    Penetration into boron carbide of an elongated high-speed projectile in the form of a copper jet produced by an explosion of a cumulative charge is studied. The efficiency of absorption of a copper jet in different brittle materials for evaluating their protective ability is compared. Conditions for the absence of the influence of the lateral unloading wave on the penetration zone, which provide the minimum penetration depth, are determined.

  3. Theoretical Calculation on Optimum Si-doping Content in Boron Carbide Thin Film

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The theoretical expression of the relationship between optimum doping content and crystal structure is presented as well as the preparation methods. By using this expression, the optimum doping content of silicon-doped boron carbide thin film is calculated. The quantitative calculation value is consistent with the experimental results. This theoretical expression is also appropriate to resolve the optimum doping content for other electric materials.

  4. Variations in Crystalline Structures and Electrical Properties of Single Crystalline Boron Nitride Nanosheets.

    Science.gov (United States)

    Aldalbahi, Ali; Zhou, Andrew Feng; Feng, Peter

    2015-11-13

    We report the studies of (1) the basic mechanism underlying the formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulsed laser plasma deposition (PLPD) technique, (2) the variation in the crystalline structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic electrical properties related to the BNNSs tunneling effect and electrical breakdown voltage. The nanoscale morphologies of BNNSs are characterized using scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM). The results show that each sample consisted of a number of transparent BNNSs that partially overlapped one another. Varying the deposition duration yielded different thicknesses of sample but did not affect the morphology, structure, and thickness of individual BNNSs pieces. Analysis of the SEM and HRTEM data revealed changes in the spatial period of the B3-N3 hexagonal structures and the interlayer distance at the edge of the BNNSs, which occurred due to the limited number of atomic layers and was confirmed further by x-ray diffraction (XRD) study. The experimental results clearly indicate that the values of the electrical conductivities of the super-thin BNNSs and the effect of temperature relied strongly on the direction of observation.

  5. Tribological behaviour of mechanically synthesized titanium-boron carbide nanostructured coating.

    Science.gov (United States)

    Aliofkhazraei, M; Rouhaghdam, A Sabour

    2012-08-01

    In this paper, titanium-boron carbide (Ti/B4C) nanocomposite coatings with different B4C nanoparticles contents were fabricated by surface mechanical attrition treatment (SMAT) method by using B4C nanoparticles with average nanoparticle size of 40 nm. The characteristics of the nanopowder and coatings were evaluated by microhardness test, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Friction and wear performances of nanocomposite coatings and pure titanium substrate were comparatively investigated, with the effect of the boron carbide content on the friction and wear behaviours to be emphasized. The results show the microhardness, friction and wear behaviours of nanocomposite coatings are closely related with boron carbide nanoparticle content. Nanocomposite coating with low B4C content shows somewhat (slight) increased microhardness and wear resistance than pure titanium substrate, while nanocomposite coating with high B4C content has much better (sharp increase) wear resistance than pure titanium substrate. The effect of B4C nanoparticles on microhardness and wear resistance was discussed.

  6. Electro-Explosive Doping of VT6 Titanium Alloy Surface by Boron Carbide

    Science.gov (United States)

    Kobzareva, T. Yu; Gromov, V. E.; Ivanov, Yu F.; Budovskkh, E. A.; Konovalov, S. V.

    2016-09-01

    The studies carried out in this work target detection of changes in the surface layer of titanium alloy VT6 after electro-explosive alloying (EEA) by boron carbide. EEA of VT6 titanium alloy surface is the plasma alloying formed during the electric explosion of foil with the sample powder of boron carbide. Carbon fibers with weight 140 mg were used as an explosive conductor. Sample powder of boron carbide B4C was placed in the area of explosion on the carbon fibers. It was revealed that EEA of the surface layers of titanium alloy samples VT6 leads to the modification of the layer, thickness of which changes from 10 pm to 50 pm. Heterogeneous distribution of alloying elements was found in the treatment zone by the methods of X-ray microanalysis. A significant difference in their concentration in the identified layers leads to difference in their structural and tribological behaviour. It was revealed that after electro-explosive alloying the microhardness of titanium alloy VT6 significantly increases. Electro-explosive alloying leads to the formation of a structure of submicro- and nano-scale level. It allows strength and tribological properties of the treated surface to be increased.

  7. Determination of nitrogen in boron carbide by instrumental photon activation analysis.

    Science.gov (United States)

    Merchel, Silke; Berger, Achim

    2007-05-01

    Boron carbide is widely used as industrial material, because of its extreme hardness, and as a neutron absorber. As part of a round-robin exercise leading to certification of a new reference material (ERM-ED102) which was demanded by the industry we analysed nitrogen in boron carbide by inert gas fusion analysis (GFA) and instrumental photon activation analysis (IPAA) using the 14N(gamma,n)13N nuclear reaction. The latter approach is the only non-destructive method among all the methods applied. By using photons with energy below the threshold of the 12C(gamma,n)11C reaction, we hindered activation of matrix and other impurities. A recently installed beam with a very low lateral activating flux gradient enabled us to homogeneously activate sample masses of approximately 1 g. Taking extra precautions, i.e. self-absorption correction and deconvolution of the complex decay curves, we calculated a nitrogen concentration of 2260+/-100 microg g-1, which is in good agreement with our GFA value of 2303+/-64 microg g-1. The values are the second and third highest of a rather atypical (non-S-shape) distribution of data of 14 round-robin participants. It is of utmost importance for the certification process that our IPAA value is the only one not produced by inert gas fusion analysis and, therefore, the only one which is not affected by a possible incomplete release of nitrogen from high-melting boron carbide.

  8. Structural modifications induced by ion irradiation and temperature in boron carbide B{sub 4}C

    Energy Technology Data Exchange (ETDEWEB)

    Victor, G., E-mail: g.victor@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pipon, Y.; Bérerd, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Institut Universitaire de Technologie (IUT) Lyon-1, Université Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France); Toulhoat, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); CEA-DEN, Saclay, 91191 Gif-sur-Yvette (France); Moncoffre, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Djourelov, N. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd, BG-1784 Sofia (Bulgaria); ELI-NP, IFIN-HH, 30 Reactorului Str, MG-6 Bucharest-Magurele (Romania); Miro, S. [CEA-DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Baillet, J. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pradeilles, N.; Rapaud, O.; Maître, A. [SPCTS, UMR CNRS 7315, Centre Européen de la céramique, University of Limoges (France); Gosset, D. [CEA, Saclay, DMN-SRMA-LA2M, 91191 Gif-sur-Yvette (France)

    2015-12-15

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B{sub 4}C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B{sub 4}C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (S{sub e} ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B{sub 4}C structure under irradiation.

  9. Structural modifications induced by ion irradiation and temperature in boron carbide B4C

    Science.gov (United States)

    Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

    2015-12-01

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

  10. Methyldichloroborane evidenced as an intermediate in the chemical vapour deposition synthesis of boron carbide.

    Science.gov (United States)

    Reinisch, G; Patel, S; Chollon, G; Leyssale, J-M; Alotta, D; Bertrand, N; Vignoles, G L

    2011-09-01

    The most recent ceramic-matrix composites (CMC) considered for long-life applications as thermostructural parts in aerospace propulsion contain, among others, boron-rich phases like boron carbide. This compound is prepared by thermal Chemical Vapour Infiltration (CVI), starting from precursors like boron halides and hydrocarbons. We present a study aiming at a precise knowledge of the gas-phase composition in a hot-zone LPCVD reactor fed with BCl3, CH4 and H2, which combines experimental and theoretical approaches. This work has brought strong evidences of the presence of Methydichloroborane (MDB, BCl2CH3) in the process. It is demonstrated that this intermediate, the presence of which had never been formally proved before, appears for processing temperatures slightly lower than the deposition temperature of boron carbide. The study features quantum chemical computations, which provide several pieces of information like thermochemical and kinetic data, as well as vibration and rotation frequencies, reaction kinetics computations, and experimental gas-phase characterization of several species by FTIR, for several processing parameter sets. The main results are presented, and the place of MDB in the reaction scheme is discussed.

  11. Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

    Energy Technology Data Exchange (ETDEWEB)

    Echeverria, Elena; Enders, A.; Dowben, P.A. [University of Nebraska-Lincoln, Department of Physics and Astronomy, Lincoln, NE (United States); James, Robinson; Chiluwal, Umesh; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Kelber, Jeffry A. [University of North Texas, Department of Chemistry, Denton, TX (United States); Pasquale, Frank L. [University of North Texas, Department of Chemistry, Denton, TX (United States); Lam Research Corporation, PECVD Business Unit, Tualatin, OR (United States); Colon Santana, Juan A. [Center for Energy Sciences Research, Lincoln, NE (United States)

    2014-09-19

    Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B{sub 10}C{sub 2}H{sub X}), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials. (orig.)

  12. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2004-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide powder and pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Total Carbon by Combustion and Gravimetry 7-17 Total Boron by Titrimetry 18-28 Isotopic Composition by Mass Spectrometry 29-38 Chloride and Fluoride Separation by Pyrohydrolysis 39-45 Chloride by Constant-Current Coulometry 46-54 Fluoride by Ion-Selective Electrode 55-63 Water by Constant-Voltage Coulometry 64-72 Impurities by Spectrochemical Analysis 73-81 Soluble Boron by Titrimetry 82-95 Soluble Carbon by a Manometric Measurement 96-105 Metallic Impurities by a Direct Reader Spectrometric Method 106-114

  13. Characterization of a Boron Carbide Heterojunction Neutron Detector

    Science.gov (United States)

    2011-03-24

    1969. [82] J. W. McClory, The Effect of Radiation on the Electrical Poperties of Aluminum Gallium Nitride / Gallium Nitrude Heterostructures, 2008...the possible limitations that can guide future development and provide a rough benchmark of what can be expected in terms of radiation hardness ...icosahedral boron-rich solids have also indicated a high level of radiation hardness [26]. As shown in Figure 26, even in experiments where

  14. Synergistic methods for the production of high-strength and low-cost boron carbide

    Science.gov (United States)

    Wiley, Charles Schenck

    2011-12-01

    Boron carbide (B4C) is a non-oxide ceramic in the same class of nonmetallic hard materials as silicon carbide and diamond. The high hardness, high elastic modulus and low density of B4C make it a nearly ideal material for personnel and vehicular armor. B4C plates formed via hot-pressing are currently issued to U.S. soldiers and have exhibited excellent performance; however, hot-pressed articles contain inherent processing defects and are limited to simple geometries such as low-curvature plates. Recent advances in the pressureless sintering of B4C have produced theoretically-dense and complex-shape articles that also exhibit superior ballistic performance. However, the cost of this material is currently high due to the powder shape, size, and size distribution that are required, which limits the economic feasibility of producing such a product. Additionally, the low fracture toughness of pure boron carbide may have resulted in historically lower transition velocities (the projectile velocity range at which armor begins to fail) than competing silicon carbide ceramics in high-velocity long-rod tungsten penetrator tests. Lower fracture toughness also limits multi-hit protection capability. Consequently, these requirements motivated research into methods for improving the densification and fracture toughness of inexpensive boron carbide composites that could result in the development of a superior armor material that would also be cost-competitive with other high-performance ceramics. The primary objective of this research was to study the effect of titanium and carbon additives on the sintering and mechanical properties of inexpensive B4C powders. The boron carbide powder examined in this study was a sub-micron (0.6 mum median particle size) boron carbide powder produced by H.C. Starck GmbH via a jet milling process. A carbon source in the form of phenolic resin, and titanium additives in the form of 32 nm and 0.9 mum TiO2 powders were selected. Parametric studies of

  15. Sintering of nano crystalline silicon carbide doping with aluminium nitride

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-04-01

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid sintering process.

  16. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Holman, Zachary C. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  17. Non-oxidic nanoscale composites: single-crystalline titanium carbide nanocubes in hierarchical porous carbon monoliths.

    Science.gov (United States)

    Sonnenburg, Kirstin; Smarsly, Bernd M; Brezesinski, Torsten

    2009-05-07

    We report the preparation of nanoscale carbon-titanium carbide composites with carbide contents of up to 80 wt%. The synthesis yields single-crystalline TiC nanocubes 20-30 nm in diameter embedded in a hierarchical porous carbon matrix. These composites were generated in the form of cylindrical monoliths but can be produced in various shapes using modern sol-gel and nanocasting methods in conjunction with carbothermal reduction. The monolithic material is characterized by a combination of microscopy, diffraction and physisorption. Overall, the results presented in this work represent a concrete design template for the synthesis of non-oxidic nanoscale composites with high surface areas.

  18. Observation of 'hidden' planar defects in boron carbide nanowires and identification of their orientations.

    Science.gov (United States)

    Guan, Zhe; Cao, Baobao; Yang, Yang; Jiang, Youfei; Li, Deyu; Xu, Terry T

    2014-01-15

    The physical properties of nanostructures strongly depend on their structures, and planar defects in particular could significantly affect the behavior of the nanowires. In this work, planar defects (twins or stacking faults) in boron carbide nanowires are extensively studied by transmission electron microscopy (TEM). Results show that these defects can easily be invisible, i.e., no presence of characteristic defect features like modulated contrast in high-resolution TEM images and streaks in diffraction patterns. The simplified reason of this invisibility is that the viewing direction during TEM examination is not parallel to the (001)-type planar defects. Due to the unique rhombohedral structure of boron carbide, planar defects are only distinctive when the viewing direction is along the axial or short diagonal directions ([100], [010], or 1¯10) within the (001) plane (in-zone condition). However, in most cases, these three characteristic directions are not parallel to the viewing direction when boron carbide nanowires are randomly dispersed on TEM grids. To identify fault orientations (transverse faults or axial faults) of those nanowires whose planar defects are not revealed by TEM, a new approach is developed based on the geometrical analysis between the projected preferred growth direction of a nanowire and specific diffraction spots from diffraction patterns recorded along the axial or short diagonal directions out of the (001) plane (off-zone condition). The approach greatly alleviates tedious TEM examination of the nanowire and helps to establish the reliable structure-property relations. Our study calls attention to researchers to be extremely careful when studying nanowires with potential planar defects by TEM. Understanding the true nature of planar defects is essential in tuning the properties of these nanostructures through manipulating their structures.

  19. Observation of ‘hidden’ planar defects in boron carbide nanowires and identification of their orientations

    Science.gov (United States)

    2014-01-01

    The physical properties of nanostructures strongly depend on their structures, and planar defects in particular could significantly affect the behavior of the nanowires. In this work, planar defects (twins or stacking faults) in boron carbide nanowires are extensively studied by transmission electron microscopy (TEM). Results show that these defects can easily be invisible, i.e., no presence of characteristic defect features like modulated contrast in high-resolution TEM images and streaks in diffraction patterns. The simplified reason of this invisibility is that the viewing direction during TEM examination is not parallel to the (001)-type planar defects. Due to the unique rhombohedral structure of boron carbide, planar defects are only distinctive when the viewing direction is along the axial or short diagonal directions ([100], [010], or 1¯10) within the (001) plane (in-zone condition). However, in most cases, these three characteristic directions are not parallel to the viewing direction when boron carbide nanowires are randomly dispersed on TEM grids. To identify fault orientations (transverse faults or axial faults) of those nanowires whose planar defects are not revealed by TEM, a new approach is developed based on the geometrical analysis between the projected preferred growth direction of a nanowire and specific diffraction spots from diffraction patterns recorded along the axial or short diagonal directions out of the (001) plane (off-zone condition). The approach greatly alleviates tedious TEM examination of the nanowire and helps to establish the reliable structure–property relations. Our study calls attention to researchers to be extremely careful when studying nanowires with potential planar defects by TEM. Understanding the true nature of planar defects is essential in tuning the properties of these nanostructures through manipulating their structures. PMID:24423258

  20. 碳化硼的研究进展%Progress of Research on Boron Carbide

    Institute of Scientific and Technical Information of China (English)

    刘珅楠; 孙帆; 谭章娜; 袁青; 周凯静; 马剑华

    2015-01-01

    碳化硼是高性能陶瓷材料中的一种重要原料,包含诸多的优良性能,除了高硬度、低密度等性能外,它还具备高化学稳定性和中子吸收截面及热电性能等特性,在国防军事设备、功能陶瓷、热电元件等诸多领域具有十分广泛的应用。本文重点介绍了碳化硼的相关性质、研究进展和应用现状。详细地介绍了碳化硼的制备方法,如电弧炉碳热还原法、自蔓延高温法、化学气相沉积法、溶胶-凝胶法等方法,并分析了它们的优缺点。%Boron carbide is a kind of important raw materials of high performanceceramic material, including many excellent performance. In addition to highhardness and low density properties, it also has high chemical stability andneutron absorption cross section and thermoelectric properties, which are widely used in national defense and military equipment, functional ceramics and thermoelectric element fields. The current research progress and application of relevant properties, boron carbide were introduced. The preparation methods of boron carbide, such as carbon arc furnace reduction method, self-propagating high temperature method, chemical vapor deposition, sol-gel method, were mainly introduced, and their advantages and disadvantages were analyzed.

  1. Preparation of titanium diboride powders from titanium alkoxide and boron carbide powder

    Indian Academy of Sciences (India)

    Hamed Sinaei Pour Fard; Hamidreza Baharvandi

    2011-07-01

    Titanium diboride powders were prepared through a sol–gel and boron carbide reduction route by using TTIP and B4C as titanium and boron sources. The influence of TTIP concentration, reaction temperature and molar ratio of precursors on the synthesis of titanium diboride was investigated. Three different concentrations of TTIP solution, 0.033/0.05/0.1, were prepared and the molar ratio of B4C to TTIP varied from 1.3 to 2.5. The results indicated that as the TTIP concentration had an important role in gel formation, the reaction temperature and B4C to TTIP molar ratio showed obvious effects on the formation of TiB2. Pure TiB2 was prepared using molar composition of Ti : B4C = 1 : 2.3 and the optimum synthesis temperature was 1200°C.

  2. Production of boron carbide powder by carbothermal synthesis of gel material

    Indian Academy of Sciences (India)

    A K Khanra

    2007-04-01

    Boron carbide (B4C) powder has been produced by carbothermal reduction of boric acid–citric acid gel. Initially a gel of boric acid–citric acid is prepared in an oven at 100°C. This gel is pyrolyzed in a high temperature furnace over a temperature range of 1000–1800°C. The reaction initiation temperature range for B4C formation is determined by thermal analysis. The optimal pyrolysis temperature of B4C synthesis is investigated. During pyrolysis, the evaporation of boron-rich phases results in presence of free carbon in B4C powder. The electron micrographs and particle size analyser reveal the generation of fine B4C particles.

  3. Atomistic explanation of shear-induced amorphous band formation in boron carbide.

    Science.gov (United States)

    An, Qi; Goddard, William A; Cheng, Tao

    2014-08-29

    Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (0111)/ slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.

  4. Transport properties of boron-doped single-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.T. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Ding, R.X., E-mail: rx_ding@163.co [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Song, J.X. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); School of Electronic Engineering, Xi' an Shiyou University, Xi' an 710075 (China)

    2011-01-15

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  5. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    Science.gov (United States)

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  6. Model creation and electronic structure calculation of amorphous hydrogenated boron carbide

    Science.gov (United States)

    Belhadj Larbi, Mohammed

    Boron-rich solids are of great interest for many applications, particularly, amorphous hydrogenated boron carbide (a-BC:H) thin films are a leading candidate for numerous applications such as: heterostructure materials, neutron detectors, and photovoltaic energy conversion. Despite this importance, the local structural properties of these materials are not well-known, and very few theoretical studies for this family of disordered solids exist in the literature. In order to optimize this material for its potential applications the structure property relationships need to be discovered. We use a hybrid method in this endeavor---which is to the best of our knowledge the first in the literature---to model and calculate the electronic structure of amorphous hydrogenated boron carbide (a-BC:H). A combination of classical molecular dynamics using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) and ab initio quantum mechanical simulations using the Vienna ab initio simulation package (VASP) have been conducted to create geometry optimized models that consist of a disordered hydrogenated twelve-vertex boron carbide icosahedra, with hydrogenated carbon cross-linkers. Then, the density functional theory (DFT) based orthogonalized linear combination of atomic orbitals (OLCAO) method was used to calculate the total and partial density of states (TDOS, PDOS), the complex dielectric function epsilon, and the radial pair distribution function (RPDF). The RPDF data stand as predictions that may be compared with future experimental electron or neutron diffraction data. The electronic structure simulations were not able to demonstrate a band gap of the same nature as that seen in prior experimental work, a general trend of the composition-properties relationship was established. The content of hydrogen and boron was found to be directly proportional to the decrease in the number of available states near the fermi energy, and inversely proportional to the

  7. Effect of addition of tartaric acid on synthesis of boron carbide powder from condensed boric acid–glycerin product

    Energy Technology Data Exchange (ETDEWEB)

    Tahara, Naoki; Kakiage, Masaki, E-mail: kakiage@apc.saitama-u.ac.jp; Yanase, Ikuo; Kobayashi, Hidehiko

    2013-10-05

    Highlights: •B{sub 4}C powder was synthesized from a condensed H{sub 3}BO{sub 3}-glycerin product with tartaric acid added. •A precursor consisting of B{sub 2}O{sub 3} and carbon was prepared by the thermal decomposition in air. •The precursors had a three-dimensional bicontinuous B{sub 2}O{sub 3}/carbon network structure. •The dispersion state became more homogeneous and finer with the addition of tartaric acid. •The complete formation of B{sub 4}C powder was achieved at 1250 °C within a shorter heat treatment time. -- Abstract: The effect of the addition of tartaric acid on the synthesis of boron carbide (B{sub 4}C) powder from a condensed boric acid (H{sub 3}BO{sub 3})–glycerin product was investigated in this study. The condensed product was prepared by dehydration condensation after directly mixing equimolar amounts of H{sub 3}BO{sub 3} and glycerin with the addition of 0–50 mol% tartaric acid (based on glycerin), which was followed by thermal decomposition in air to obtain a precursor powder from which excess carbon had been eliminated. The dispersion state of the boron oxide (B{sub 2}O{sub 3}) and carbon components in the precursor prepared from the condensed product with 25 mol% tartaric acid added was finer than that without tartaric acid added, in which both precursors had a three-dimensional bicontinuous B{sub 2}O{sub 3}/carbon network structure. The complete formation of crystalline B{sub 4}C powder was achieved at 1250 °C within a shorter heat treatment time for the precursor with a fine dispersion state. The synthesized B{sub 4}C powders became fine owing to the increased number of nucleation sites.

  8. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Science.gov (United States)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  9. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu, E-mail: lfchen@xmu.edu.cn

    2016-09-30

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiC{sub f}/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  10. Improved green-light-emitting pyrotechnic formulations based on tris(2,2,2-trinitroethyl)borate and boron carbide.

    Science.gov (United States)

    Klapötke, Thomas M; Krumm, Burkhard; Rusan, Magdalena; Sabatini, Jesse J

    2014-08-28

    Green-light-emitting pyrotechnic compositions based on tris(2,2,2-trinitroethyl)borate (TNEB) and boron carbide have been investigated. The best performing formulations were found to be insensitive to various ignition stimuli, and exhibited very high spectral purities and luminosities compared to previously reported green-light-emitting formulations.

  11. High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor

    Science.gov (United States)

    Hushur, Anwar; Manghnani, Murli H.; Werheit, Helmut; Dera, Przemyslaw; Williams, Quentin

    2016-02-01

    Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking. This is obtained from observations of transparency, which most rapidly increases around 55 GPa. Full visible optical transparency is approached at pressures of  >60 GPa indicating that the band gap reaches ~3.5 eV at high pressure, boron carbide is a wide-gap semiconductor. The reason is that the high concentration of structural defects controlling the electronic properties of boron carbide at ambient conditions initially decreases and finally vanishes at high pressures. The structural parameters and Raman-active phonons indicate a pressure-dependent phase transition in single-crystal natB4.3C boron carbide near 40 GPa, likely related to structural changes in the C-B-C chains, while the basic icosahedral structure appears to be less affected.

  12. High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor.

    Science.gov (United States)

    Hushur, Anwar; Manghnani, Murli H; Werheit, Helmut; Dera, Przemyslaw; Williams, Quentin

    2016-02-01

    Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking. This is obtained from observations of transparency, which most rapidly increases around 55 GPa. Full visible optical transparency is approached at pressures of  >60 GPa indicating that the band gap reaches ~3.5 eV; at high pressure, boron carbide is a wide-gap semiconductor. The reason is that the high concentration of structural defects controlling the electronic properties of boron carbide at ambient conditions initially decreases and finally vanishes at high pressures. The structural parameters and Raman-active phonons indicate a pressure-dependent phase transition in single-crystal (nat)B4.3C boron carbide near 40 GPa, likely related to structural changes in the C-B-C chains, while the basic icosahedral structure appears to be less affected.

  13. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  14. Low temperature carbothermal and boron carbide reduction synthesis of LaB{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Muhammad; Sugo, Heber; Kisi, Erich, E-mail: Erich.Kisi@newcastle.edu.au

    2013-11-25

    Highlights: •Two simple solid-state synthesis routes to yield pure LaB{sub 6} between 1350-1450°C are reported. •The mechanism of LaB{sub 6} synthesis has been explained. •The mean crystallite size for both methods is below one micron suggesting good sinterability. •LaB{sub 6} manufactured by these procedures exhibits a Richardson work function of 2.64 eV. -- Abstract: Rare-earth hexaborides are widely used as thermionic emitters however their economic production for large scale applications such as solar thermionic electricity generation is hampered by a need to synthesise them at lower temperature without post-synthesis cleaning treatments. Two simple synthesis techniques for producing pure lanthanum hexaboride (LaB{sub 6}), carbothermal reduction using La{sub 2}O{sub 3}–boron–carbon and boron carbide reduction using La{sub 2}O{sub 3}–B{sub 4}C blends respectively were studied. Using fine grained starting materials and a mild pre-milling treatment, the carbothermal method was found to produce high-purity LaB{sub 6} at a temperature 1400 °C or below. The B{sub 4}C method also appeared from XRD and SEM analyses of abraded surfaces to produce high-purity LaB{sub 6} at 1400 °C however EDS maps of polished cross-sections revealed the presence of unreacted B{sub 4}C necessitating a temperature of 1450 °C to complete the reaction. XRD and SEM analyses indicate that the mean particle sizes of LaB{sub 6} using the boron carbide method (220 nm) is smaller than that for the carbothermal reduction method (600 nm). The finer grains of samples prepared via the boron carbide method result in a partially sintered powder. LaB{sub 6} prepared in this way is shown to have a Richardson work function of 2.64 eV.

  15. Microstructural study of oxidation of carbon-rich amorphous boron carbide coating

    Institute of Scientific and Technical Information of China (English)

    Bin ZENG; Zu-de FENG; Si-wei LI; Yong-sheng LIU

    2008-01-01

    Carbon-rich amorphous boron carbide (BxC) coatings were annealed at 400℃, 700℃, 1000℃ and 1200℃ for 2 h in air atmosphere. The microstructure and composition of the as-deposited and annealed coat-ings were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), micro-Raman spectro-scopy and energy dispersive X-ray spectroscopy (EDS). All of the post-anneal characterizations demonstrated the ability of carbon-rich BxC coatings to protect the graphite substrate against oxidation. Different oxidation modes of the coatings were found at low temperature (400℃), moderate temperature (700℃) and high temper-ature (1000℃ and 1200℃). Finally, the feasibility of the application of carbon-rich BxC instead of pyrolytic car-bon (PyC) as a fiber/matrix interlayer in ceramics-matrix composites (CMCs) is discussed here.

  16. Lightweight graphene nanoplatelet/boron carbide composite with high EMI shielding effectiveness

    Science.gov (United States)

    Tan, Yongqiang; Luo, Heng; Zhang, Haibin; Zhou, Xiaosong; Peng, Shuming

    2016-03-01

    Lightweight graphene nanoplatelet (GNP)/boron carbide (B4C) composites were prepared and the effect of GNPs loading on the electromagnetic interference (EMI) shielding effectiveness (SE) has been evaluated in the X-band frequency range. Results have shown that the EMI SE of GNP/B4C composite increases with increasing the GNPs loading. An EMI SE as high as 37 ˜ 39 dB has been achieved in composite with 5 vol% GNPs. The high EMI SE is mainly attributed to the high electrical conductivity, high dielectric loss as well as multiple reflections by aligned GNPs inside the composite. The GNP/B4C composite is demonstrated to be promising candidate of high-temperature microwave EMI shielding material.

  17. Lightweight graphene nanoplatelet/boron carbide composite with high EMI shielding effectiveness

    Directory of Open Access Journals (Sweden)

    Yongqiang Tan

    2016-03-01

    Full Text Available Lightweight graphene nanoplatelet (GNP/boron carbide (B4C composites were prepared and the effect of GNPs loading on the electromagnetic interference (EMI shielding effectiveness (SE has been evaluated in the X-band frequency range. Results have shown that the EMI SE of GNP/B4C composite increases with increasing the GNPs loading. An EMI SE as high as 37 ∼ 39 dB has been achieved in composite with 5 vol% GNPs. The high EMI SE is mainly attributed to the high electrical conductivity, high dielectric loss as well as multiple reflections by aligned GNPs inside the composite. The GNP/B4C composite is demonstrated to be promising candidate of high-temperature microwave EMI shielding material.

  18. Enhanced mechanical properties of nanocrystalline boron carbide by nanoporosity and interface phases.

    Science.gov (United States)

    Madhav Reddy, K; Guo, J J; Shinoda, Y; Fujita, T; Hirata, A; Singh, J P; McCauley, J W; Chen, M W

    2012-01-01

    Ceramics typically have very high hardness, but low toughness and plasticity. Besides intrinsic brittleness associated with rigid covalent or ionic bonds, porosity and interface phases are the foremost characteristics that lead to their failure at low stress levels in a brittle manner. Here we show that, in contrast to the conventional wisdom that these features are adverse factors in mechanical properties of ceramics, the compression strength, plasticity and toughness of nanocrystalline boron carbide can be noticeably improved by introducing nanoporosity and weak amorphous carbon at grain boundaries. Transmission electron microscopy reveals that the unusual nanosize effect arises from the deformation-induced elimination of nanoporosity mediated by grain boundary sliding with the assistance of the soft grain boundary phases. This study has important implications in developing high-performance ceramics with ultrahigh strength and enhanced plasticity and toughness.

  19. Electronic metal-support interaction enhanced oxygen reduction activity and stability of boron carbide supported platinum

    Science.gov (United States)

    Jackson, Colleen; Smith, Graham T.; Inwood, David W.; Leach, Andrew S.; Whalley, Penny S.; Callisti, Mauro; Polcar, Tomas; Russell, Andrea E.; Levecque, Pieter; Kramer, Denis

    2017-06-01

    Catalysing the reduction of oxygen in acidic media is a standing challenge. Although activity of platinum, the most active metal, can be substantially improved by alloying, alloy stability remains a concern. Here we report that platinum nanoparticles supported on graphite-rich boron carbide show a 50-100% increase in activity in acidic media and improved cycle stability compared to commercial carbon supported platinum nanoparticles. Transmission electron microscopy and x-ray absorption fine structure analysis confirm similar platinum nanoparticle shapes, sizes, lattice parameters, and cluster packing on both supports, while x-ray photoelectron and absorption spectroscopy demonstrate a change in electronic structure. This shows that purely electronic metal-support interactions can significantly improve oxygen reduction activity without inducing shape, alloying or strain effects and without compromising stability. Optimizing the electronic interaction between the catalyst and support is, therefore, a promising approach for advanced electrocatalysts where optimizing the catalytic nanoparticles themselves is constrained by other concerns.

  20. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-15

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

  1. Answer to professor H. Werheit's comment on the article "Is linear group X-Y-Z in boron carbide the weakest link in the structure?"

    Science.gov (United States)

    Konovalikhin, S. V.; Ponomarev, V. I.

    2016-07-01

    The author of the comment and the authors of the paper speak about different things. The paper considered the structure of a fragment of the boron carbide structure. The results of quantum-chemical calculations were compared with the structure of the analogous fragments of boron carbide single crystals and their derivatives. The author of the comment analyzed the structure of polycrystals only on the basis of their IR and Raman spectral studies.

  2. Prediction of superstrong τ-boron carbide phase from quantum mechanics

    Science.gov (United States)

    An, Qi

    2017-03-01

    Searching for ultrahard materials is of great interest in scientific research and for industrial applications. Boron carbide (B4C ) is one of the hardest known materials, but its Vickers hardness (30 GPa) is much less than diamond (115 GPa) and cubic boron nitride (48 GPa). A new B4C phase with twinlike character, denoted as τ -B4C , is characterized using density functional theory. This τ -B4C is based on the Cmcm orthorhombic space group and is slightly less stable than the known rhombohedral B4C (R -B4C ) by 3.87 meV /B4C . Resulting shear deformation along the least stress slip system shows that τ -B4C has an ideal shear strength of 45.1 GPa, which is 15.6% higher than R -B4C , suggesting that τ -B4C is much stronger than R -B4C . However, under biaxial shear deformation to mimic indentation stress conditions, the critical shear stress for τ -B4C is 28.8 GPa, which is similar to that of R -B4C (28.5 GPa), indicating that the intrinsic hardness is similar for these two phases. The failure mechanism of the τ -B4C is the deconstruction of the icosahedra arising from the B-C bond breaking within the icosahedron. It may be worth exploring how to synthesize τ -B4C experimentally because of its high strength.

  3. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  4. Design of boron carbide-shielded irradiation channel of the outer irradiation channel of the Ghana Research Reactor-1 using MCNP.

    Science.gov (United States)

    Abrefah, R G; Sogbadji, R B M; Ampomah-Amoako, E; Birikorang, S A; Odoi, H C; Nyarko, B J B

    2011-01-01

    The MCNP model for the Ghana Research Reactor-1 was redesigned to incorporate a boron carbide-shielded irradiation channel in one of the outer irradiation channels. Extensive investigations were made before arriving at the final design of only one boron carbide covered outer irradiation channel; as all the other designs that were considered did not give desirable results of neutronic performance. The concept of redesigning a new MCNP model, which has a boron carbide-shielded channel is to equip the Ghana Research Reactor-1 with the means of performing efficient epithermal neutron activation analysis. After the simulation, a comparison of the results from the original MCNP model for the Ghana Research Reactor-1 and the new redesigned model of the boron carbide shielded channel was made. The final effective criticality of the original MCNP model for the GHARR-1 was recorded as 1.00402 while that of the new boron carbide designed model was recorded as 1.00282. Also, a final prompt neutron lifetime of 1.5245 × 10(-4)s was recorded for the new boron carbide designed model while a value of 1.5571 × 10(-7)s was recorded for the original MCNP design of the GHARR-1.

  5. Investigations on boron carbide oxidation for nuclear reactors safety-General modelling for ICARE/CATHARE code applications

    Energy Technology Data Exchange (ETDEWEB)

    Seiler, N. [Institut de Radioprotection et de Surete Nucleaire (IRSN), Cadarache, BP 3, 13 115 Saint Paul lez Durance Cedex (France)], E-mail: nathalie.seiler@irsn.fr; Bertrand, F.; Marchand, O.; Repetto, G. [Institut de Radioprotection et de Surete Nucleaire (IRSN), Cadarache, BP 3, 13 115 Saint Paul lez Durance Cedex (France); Ederli, S. [ENEA, Ente per le Nuove Tecnologie l' Energia et l' Ambiente (Italy)

    2008-04-15

    The present paper deals with the problem of boron carbide pellet oxidation which might occur during a severe accident. A basic correlation, involving global variables, has been developed for the simulation of boron carbide oxidation with the ICARE/CATHARE code. This modelling has been based on available experimental data, including the VERDI separate effects experiments performed by IRSN at low pressures and high temperatures. According to the agreement between the measured and the calculated bundle temperatures as well as hydrogen release and oxidized B{sub 4}C, the ICARE/CATHARE code simulates rather well QUENCH experiments involving B{sub 4}C control rod degradation, Zircaloy oxidation under starvation and cooling with steam. Based on simulations results, it has been noticed that the B{sub 4}C degradation has a slight direct effect on global bundle degradation but a non-negligible influence on Zircaloy oxidation through power release, material melting and flowing down.

  6. Design and testing of a boron carbide capsule for spectral-tailoring in mixed-spectrum reactors

    Energy Technology Data Exchange (ETDEWEB)

    Greenwood, L.R.; Wittman, R. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Pierson, B.P. [Univ. of Michigan, Ann Arbor, MI 48109 (United States); Metz, L.A.; Payne, R.; Finn, E.C.; Friese, J.I. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States)

    2011-07-01

    A boron carbide capsule has been designed and used for spectral-tailoring experiments at the TRIGA reactor at Washington State Univ.. Irradiations were conducted in pulsed mode and in continuous operation for up to 4 h. A cadmium cover was used to reduce thermal heating. The neutron spectrum calculated with the Monte Carlo N-particle transport code was found to be in good agreement with reactor dosimetry measurements using the STAY'SL computer code. The neutron spectrum resembles that of a fast reactor. The design of a capsule using boron carbide fully enriched in {sup 10}B shows that it is possible to produce a neutron spectrum similar to that of {sup 235}U fission. (authors)

  7. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  8. Preparation of Nano-crystalline Tungsten Carbide Thin Film by Magnetron Sputtering and Their Electrocatalytic Property for PNP Reduction

    Institute of Scientific and Technical Information of China (English)

    Hua Jun ZHENG; Jian Guo HUANG; Chun An MA

    2005-01-01

    Nano-crystalline tungsten carbide thin films were deposited on Ni substrates by magnetron sputtering using WC as target material. The crystal structure and morphology of the thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).Electrochemical investigations showed that the electrode of the thin film exhibited higher electrocatalytic activity in the reaction of p-nitrophenol (PNP) reduction. FT-IR analysis indicated that p-aminophenol (PAP) was synthesized after two step reduction of PNP on nano-crystalline tungsten carbide thin film electrode.

  9. Technology Research of Ultrafine Grinding Boron Carbide%碳化硼超细粉碎工艺研究

    Institute of Scientific and Technical Information of China (English)

    王圈库; 焦永峰

    2013-01-01

    碳化硼(B4C)是重要的超硬材料,B4C陶瓷是高性能的工程陶瓷材料,采用亚微米级超细粉体原料是制备碳化硼陶瓷良好性能的关键.本文采用砂磨工艺制备亚微米B4C超细粉体,对砂磨工艺的球料比、料水比和分散剂用量等工艺参数进行了考察,成功制备得到中位粒径D50小于0.6μm的碳化硼超细粉体,并用以制备得到了高致密度无压烧结碳化硼陶瓷.%Boron carbide (B4C) is an important super hard materials,and B4C ceramics is one kind of high performance engineering ceramics.Sub-micron B4C powder is the key to ensure good performance for ceramic materials.In this paper,sub-micron boron carbide powder was fabricated by attrition milling process,and the ball-feed ratio,feed-water ratio and the amount of dispersant were investigated.The boron carbide powder which grain size D50 is less than 0.6 μ m was prepared successful,and then high density pressure less sintering boron carbide ceramic was prepared.

  10. The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

    Science.gov (United States)

    Ivanov, Yuri; Tolkachev, Oleg; Petyukevich, Maria; Teresov, Anton; Ivanova, Olga; Ikonnikova, Irina; Polisadova, Valentina

    2016-01-01

    The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

  11. The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, Yuri, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 2/3 Akademicheskiy Ave. Tomsk, 634055 (Russian Federation); National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050 (Russian Federation); Tolkachev, Oleg, E-mail: ole.ts@mail.ru; Petyukevich, Maria, E-mail: petukevich@tpu.ru; Polisadova, Valentina, E-mail: polis@tpu.ru [National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050 (Russian Federation); Teresov, Anton, E-mail: tad514@sibmail.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 2/3 Akademicheskiy Ave. Tomsk, 634055 (Russian Federation); National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irina-ikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq., Tomsk, 634003 (Russian Federation)

    2016-01-15

    The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm{sup 2}, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

  12. Effect of sintering aids on boron carbide sintering; Efeito de aditivos na sinterizacao de carbeto de boro

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Francisco Cristovao Lourenco de; Silva, Cosme Roberto Moreira da [Centro Tecnico Aeroespacial, Sao Jose dos Campos, SP (Brazil). Inst. de Atividades Espaciais; Bressiani, Jose Carlos [Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo, SP (Brazil)

    1995-12-31

    The special physical characteristics of boron carbide (B{sub 4} C) allow its use in a wide range of application in engineering design. Despite of this, the densification during sintering step became the main drawback of the development of ceramics components. The present work deals with the role of sintering aids on the densification of boron carbide ceramics produced through pressureless and hot-pressing sintering. The applied sintering aids were, C+B{sub 2} O{sub 3}+ Al{sub 2} O{sub 3}, Ni and/or Ti. Dilatometry was used to assist hot-pressing and, C+B{sub 2} O{sub 3} + Al{sub 2} O{sub 3} were the sintering aids. In the both cases the sintering temperature was lowered to 2200 K and 2073 K, pressureless and hot pressing respectively. The results of hardness of about 35 GPa and densification of 99% theoretical density for hot-pressed material show the effectiveness of these sintering aids. So far as the obtained data from this work is concerned we may believe that is possible to produce boron carbide ceramics components with both high density and hardness with lower cost by lowering sintering temperatures, that is, 200 K for pressureless sintering and 350 K for hot-pressing. (author) 13 refs., 1 fig., 5 tabs.

  13. Optical constants of magnetron-sputtered boron carbide thin films from photoabsorption data in the range 30 to 770 eV.

    Science.gov (United States)

    Soufli, Regina; Aquila, Andrew L; Salmassi, Farhad; Fernández-Perea, Mónica; Gullikson, Eric M

    2008-09-01

    This work discusses the experimental determination of the optical constants (refractive index) of DC-magnetron-sputtered boron carbide films in the 30-770 eV photon energy range. Transmittance measurements of three boron carbide films with thicknesses of 54.2, 79.0, and 112.5 nm were performed for this purpose. These are believed to be the first published experimental data for the refractive index of boron carbide films in the photon energy range above 160 eV and for the near-edge x-ray absorption fine structure regions around the boron K (188 eV), carbon K (284.2 eV), and oxygen K (543.1 eV) absorption edges. The density, composition, surface chemistry, and morphology of the films were also investigated using Rutherford backscattering, x-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and extreme ultraviolet reflectance measurements.

  14. Phase transitions of boron carbide: Pair interaction model of high carbon limit

    Science.gov (United States)

    Yao, Sanxi; Huhn, W. P.; Widom, M.

    2015-09-01

    Boron Carbide exhibits a broad composition range, implying a degree of intrinsic substitutional disorder. While the observed phase has rhombohedral symmetry (space group R 3 bar m), the enthalpy minimizing structure has lower, monoclinic, symmetry (space group Cm). The crystallographic primitive cell consists of a 12-atom icosahedron placed at the vertex of a rhombohedral lattice, together with a 3-atom chain along the 3-fold axis. In the limit of high carbon content, approaching 20% carbon, the icosahedra are usually of type B11 Cp, where the p indicates the carbon resides on a polar site, while the chains are of type C-B-C. We establish an atomic interaction model for this composition limit, fit to density functional theory total energies, that allows us to investigate the substitutional disorder using Monte Carlo simulations augmented by multiple histogram analysis. We find that the low temperature monoclinic Cm structure disorders through a pair of phase transitions, first via a 3-state Potts-like transition to space group R3m, then via an Ising-like transition to the experimentally observed R 3 bar m symmetry. The R3m and Cm phases are electrically polarized, while the high temperature R 3 bar m phase is nonpolar.

  15. Property improvement of pulsed laser deposited boron carbide films by pulse shortening

    Energy Technology Data Exchange (ETDEWEB)

    Csako, T. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Budai, J. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Szoerenyi, T. [Research Group on Laser Physics of the Hungarian Academy of Sciences, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary)]. E-mail: t.szorenyi@physx.u-szeged.hu

    2006-04-30

    Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B{sub 4}C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm{sup -2} result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm{sup -2} fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 x 10{sup 4} to 7 x 10{sup 4} mm{sup -2} deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses.

  16. Improvements of Thermal, Mechanical, and Water-Resistance Properties of Polybenzoxazine/Boron Carbide Nanocomposites

    Science.gov (United States)

    Ramdani, Noureddine; Derradji, Mehdi; Wang, Jun; Mokhnache, El-Oualid; Liu, Wen-Bin

    2016-09-01

    Novel kinds of nanocomposites based on bisphenol A-aniline based polybenzoxazine matrix P(BA-a) and 0 wt.%-20 wt.% boron carbide (B4C) nanoparticles were produced and their properties were evaluated in terms of the nano-B4C content. The thermal conductivity of the P(BA-a) matrix was improved approximately three times from 0.18 W/m K to 0.86 W/m K at 20 wt.% nano-B4C loading, while its coefficient of thermal expansion (CTE) was deceased by 47% with the same nanofiller content. The microhardness properties were significantly improved by adding the B4C nanoparticles. At 20 wt.% of nano-B4C content, dynamic mechanical analysis (DMA) revealed a marked increase in the storage modulus and the glass transition temperature ( T g) of the nanocomposites, reaching 3.9 GPa and 204°C, respectively. Hot water uptake tests showed that the water-resistance of the polybenzoxazine matrix was increased by filling with nano-B4C nano-filler. The morphological analysis reflected that the improvements obtained in the mechanical and thermal properties are related to the uniform dispersion of the nano-B4C particles and their strong adhesion to the P(BA-a) matrix.

  17. Effect of mechanical and thermal loading on boron carbide particles reinforced Al-6061 alloy

    Energy Technology Data Exchange (ETDEWEB)

    Manjunatha, B., E-mail: manjunathab.ait@gmail.com [Department of Mechanical Engineering, Acharya Institute of Technology, Soldevanahalli, Hesaraghatta Main Road, Bangalore 560090 (India); Niranjan, H.B., E-mail: girija_hb@hotmail.com [Department of Mechanical Engineering, Sambhram Institute of Technology, Lakshmipura Cross, MS Palya, Jalahalli East, Bangalore 560097 (India); Satyanarayana, K.G., E-mail: gundsat42@hotmail.com [Poornaprajna Institute of Scientific Research (PPISR), Sy. No. 167, Poornaprajnapura, Bidalur Post, Devanahalli, Bangalore 562110, Karnataka (India)

    2015-04-24

    Metal Matrix Composites (MMC) considered as one of the ‘advanced materials’ have evoked growing interest during the last three decades due to their high performance and applications in strategic sectors. These composites exhibit unique and attractive properties over the monolithic alloys, but suffer from low ductility, which makes them not so attractive for some of the applications where high toughness is one of the design criteria. This limitation of MMCs has been overcome by resorting to various treatments such as mechanical and thermal loading. Considering very limited reports available on Al alloy reinforced with boron carbide (B{sub 4}C) particles, this paper presents (i) preparation of Al-6061 alloy reinforced with 1.5–10 wt% B{sub 4}C, (ii) subjecting them to mechanical and thermal treatments and (iii) characterization of all the above samples. Specific ultimate tensile strength and hardness of all the composites were higher than those of matrix. Also, these values increased with increasing amount of particles, with composites containing 8 wt% B{sub 4}C showing the maximum values in all the three conditions. These observations are supported by the uniform distribution of particles in the matrix as observed in their microstructure.

  18. Boron carbide nanoclusters as H2 and N2 gases nanosensors: theoretical investigation

    Science.gov (United States)

    Fallahpour, F.; Gorgani, S. Soleimani; Nouraliei, M.

    2016-08-01

    Interactions between boron carbide nanoclusters (B16C16 and B24C24) and H2 and N2 molecules have been investigated using the structural and electronic properties of the adsorbate/cluster complexes derived from density functional theory. The adsorption energies of the most stable configurations have been calculated to be about -0.13, -0.66 eV for H2 and N2 adsorbed on the B16C16 surface and -1.05, -3.80 eV for H2 and N2 adsorbed on the B24C24 surface, respectively. Moreover, the interaction between H2 and the B16C16 has induced dramatic changes to the cluster electronic properties, so that the HOMO/LUMO gap of the cluster decreases to its original value. It has been shown that this phenomenon has led to an increment in the electrical conductivity of the cluster at a definite temperature. Thus, this work suggests that the B16C16 and B24C24 nano-cages function selectively as a gas sensor device for H2 and N2 molecules.

  19. Non-catalytic facile synthesis of superhard phase of boron carbide (B13C2) nanoflakes and nanoparticles.

    Science.gov (United States)

    Xie, Sky Shumao; Su, Liap Tat; Guo, Jun; Vasylkiv, Oleg; Borodianska, Hanna; Xi, Zhu; Krishnan, Gireesh M; Su, Haibin; Tokl, Alfred I Y

    2012-01-01

    Boron Carbide is one the hardest and lightest material that is also relatively easier to synthesis as compared to other superhard ceramics like cubic boron nitride and diamond. However, the brittle nature of monolithic advanced ceramics material hinders its use in various engineering applications. Thus, strategies that can toughen the material are of fundamental and technological importance. One approach is to use nanostructure materials as building blocks, and organize them into a complex hierarchical structure, which could potentially enhance its mechanical properties to exceed that of the monolithic form. In this paper, we demonstrated a simple approach to synthesize one- and two-dimension nanostructure boron carbide by simply changing the mixing ratio of the initial compound to influence the saturation condition of the process at a relatively low temperature of 1500 degrees C with no catalyst involved in the growing process. Characterization of the resulting nano-structures shows B13C2, which is a superhard phase of boron carbide as its hardness is almost twice as hard as the commonly known B4C. Using ab-initio density functional theory study on the elastic properties of both B12C3 and B13C2, the high hardness of B13C2 is consistent to our calculation results, where bulk modulus of B13C2 is higher than that of B4C. High resolution transmission electron microscopy of the nanoflakes also reveals high density of twinning defects which could potentially inhibit the crack propagation, leading to toughening of the materials.

  20. Investigation of wear and tool life of coated carbide and cubic boron nitride cutting tools in high speed milling

    Directory of Open Access Journals (Sweden)

    Pawel Twardowski

    2015-06-01

    Full Text Available The objective of the investigation was analysis of the wear of milling cutters made of sintered carbide and of boron nitride. The article presents the life period of the cutting edges and describes industrial conditions of the applicability of tools made of the materials under investigation. Tests have been performed on modern toroidal and ball-end mill cutters. The study has been performed within a production facility in the technology of high speed machining of 55NiCrMoV6 and X153CrMoV12 hardened steel. The analysed cutting speed is a parameter which significantly influences the intensity of heat generated in the cutting zone. Due to the wear characteristics, two areas of applicability of the analysed tools have been distinguished. For vc  ≤ 300 m/min, sintered carbide edges are recommended; for vc  > 500 m/min, boron nitride edges. For 300 ≤ vc  ≤ 500 m/min, a transition area has been observed. It has been proved that the application of sintered carbide edges is not economically justified above certain cutting speed.

  1. Low temperature synthesis of boron carbide micropowder%碳化硼微粉的低温合成

    Institute of Scientific and Technical Information of China (English)

    张云霏; 仲剑初; 王洪志

    2011-01-01

    以聚乙烯醇和硼酸为原料,首先合成聚乙烯醇硼酸酯前驱物凝胶,然后将前驱物热解及碳热还原制备碳化硼粉末.考察了聚乙烯醇与硼酸的物质的量比,前驱物热解温度,碳热还原温度以及还原时间等因素对碳化硼合成的影响.采用IR、化学分析、XRD、离心粒度分析、SEM等方法对中间物及产物进行了表征,确定了中间物及产物的组成、物相、粒度分布及形貌.研究结果表明:前驱物合成的适宜原料配比是n(聚乙烯醇)∶n(硼酸)=4∶1;前驱物在600℃下热解2h,在1 300℃下碳热还原2h,得到粒径为10 μm左右的碳化硼微粉.%Polyvinyl borate gel was prepared with polyvinyl alcohol (PVA) and boron acid as raw materials, which was employed as precursor for preparing boron carbide and then it was pyrolyzed and reduced to form boron carbide powder by carbonthermal process. Effects of amount-of-substance ratio of polyvinyl alcohol to boron acid, pyrolyzed temperature of the precursor, carbonthermal reduction temperature,and reduction time of pyrolyzed precursor on boron carbide synthesis were respectively investigated. Intermediate and product were respectively characterized by FT-IR,chemical composition,XRD, SEM, and particle size analysis etc.. Results indicated that the optimum raw material mix ratio for precursor polyvinyl borate was n[ PVA) : n( boron acid) =4: 1 ;B4C powder with a primary particle size of 10 ftm could be obtained when the precursor was pyrolyzed at 600 °C for 2 h,and then treated at 1300 ℃ for 2 h.

  2. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ULTRAFINE WC/Co CEMENTED CARBIDES WITH CUBIC BORON NITRIDE AND Cr₃C₂ ADDITIONS

    Directory of Open Access Journals (Sweden)

    Genrong Zhang

    2016-03-01

    Full Text Available This study investigates the microstructure and mechanical properties of ultrafine tungsten carbide and cobalt (WC/Co cemented carbides with cubic boron nitride (CBN and chromium carbide (Cr₃C₂ fabricated by a hot pressing sintering process. This study uses samples with 8 wt% Co content and 7.5 vol% CBN content, and with different Cr₃C₂ content ranging from 0 to 0.30 wt%. Based on the experimental results, Cr₃C₂ content has a significant influence on inhibiting abnormal grain growth and decreasing grain size in cemented carbides. Near-full densification is possible when CBN-WC/Co with 0.25 wt% Cr₃C₂ is sintered at 1350°C and 20 MPa; the resulting material possesses optimal mechanical properties and density, with an acceptable Vickers hardness of 19.20 GPa, fracture toughness of 8.47 MPa.m1/2 and flexural strength of 564 MPa.u̇ Å k⃗

  3. New insights into the enigma of boron carbide inverse molecular behavior

    Energy Technology Data Exchange (ETDEWEB)

    Dera, Przemyslaw, E-mail: pdera@hawaii.edu [Hawaii Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawaii at Manoa, 1680 East West Road, POST Building, Honolulu, HI 96822 (United States); Manghnani, Murli H.; Hushur, Anwar; Hu, Yi [Hawaii Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawaii at Manoa, 1680 East West Road, POST Building, Honolulu, HI 96822 (United States); Tkachev, Sergey [Center for Advanced Radiation Sources, The University of Chicago, Argonne National Laboratory, 9700 S. Cass Avenue, Building 434, Argonne, IL 60439 (United States)

    2014-07-01

    Equation of state and compression mechanism of nearly stoichiometric boron carbide B{sub 4}C were investigated using diamond anvil cell single crystal synchrotron X-ray diffraction technique up to a maximum quasi-hydrostatic pressure of 74.0(1) GPa in neon pressure transmitting medium at ambient temperature. No signatures of structural phase transitions were observed on compression. Crystal structure refinements indicate that the icosahedral units are less compressible (13% volume reduction at 60 GPa) than the unit cell volume (18% volume reduction at 60 GPa), contrary to expectations based on the inverse molecular behavior hypothesis, but consistent with spectroscopic evidence and first principles calculations. The high-pressure crystallographic refinements reveal that the nature of the chemical bonds (two, versus three centered character) has marginal effect on the bond compressibility and the compression of the crystal is mainly governed by the force transfer between the rigid icosahedral structural units. - Graphical abstract: Single crystal measurements of equation of state and compression mechanism of B{sub 4}C show that the icosahedral units are less compressibe than the unit cell volume, despite the threei-ceneterd nature of some icosahedral bonds. - Highlights: • Equation of state and compression mechanism of B{sub 4}C were measured to 75 GPa. • No signatures of structural phase transitions were observed on compression. • Icosahedral units are less compressibe than the unit cell volume. • The nature of the chemical bonds has mariginal effect on the bond compressibility. • The compression is governed by force transfer between the rigid icosahedra.

  4. Characterization of boron carbide particulate reinforced in situ copper surface composites synthesized using friction stir processing

    Energy Technology Data Exchange (ETDEWEB)

    Sathiskumar, R., E-mail: sathiscit2011@gmail.com [Department of Mechanical Engineering, Coimbatore Institute of Technology, Coimbatore, 641 014 Tamil Nadu (India); Murugan, N., E-mail: murugan@cit.edu.in [Department of Mechanical Engineering, Coimbatore Institute of Technology, Coimbatore, 641 014 Tamil Nadu (India); Dinaharan, I., E-mail: dinaweld2009@gmail.com [Department of Mechanical Engineering, V V College of Engineering, Tisaiyanvilai, 627 657 Tamil Nadu (India); Vijay, S.J., E-mail: vijayjoseph@karunya.edu [Centre for Research in Metallurgy (CRM), School of Mechanical Sciences, Karunya University, Coimbatore, 641 114 Tamil Nadu (India)

    2013-10-15

    Friction stir processing has evolved as a novel solid state technique to fabricate surface composites. The objective of this work is to apply the friction stir processing technique to fabricate boron carbide particulate reinforced copper surface composites and investigate the effect of B{sub 4}C particles and its volume fraction on microstructure and sliding wear behavior of the same. A groove was prepared on 6 mm thick copper plates and packed with B{sub 4}C particles. The dimensions of the groove was varied to result in five different volume fractions of B{sub 4}C particles (0, 6, 12, 18 and 24 vol.%). A single pass friction stir processing was done using a tool rotational speed of 1000 rpm, travel speed of 40 mm/min and an axial force of 10 kN. Metallurgical characterization of the Cu/B{sub 4}C surface composites was carried out using optical microscope and scanning electron microscope. The sliding wear behavior was evaluated using a pin-on-disk apparatus. Results indicated that the B{sub 4}C particles significantly influenced the area, dispersion, grain size, microhardness and sliding wear behavior of the Cu/B{sub 4}C surface composites. When the volume fraction of B{sub 4}C was increased, the wear mode changed from microcutting to abrasive wear and wear debris was found to be finer. Highlights: • Fabrication of Cu/B{sub 4}C surface composite by friction stir processing • Analyzing the effect of B{sub 4}C particles on the properties of Cu/B4C surface composite • Increased volume fraction of B{sub 4}C particles reduced the area of surface composite. • Increased volume fraction of B{sub 4}C particles enhanced the microhardness and wear rate. • B{sub 4}C particles altered the wear mode from microcutting to abrasive.

  5. Atomic structure of icosahedral B4C boron carbide from a first principles analysis of NMR spectra.

    Science.gov (United States)

    Mauri, F; Vast, N; Pickard, C J

    2001-08-20

    Density functional theory is demonstrated to reproduce the 13C and 11B NMR chemical shifts of icosahedral boron carbides with sufficient accuracy to extract previously unresolved structural information from experimental NMR spectra. B4C can be viewed as an arrangement of 3-atom linear chains and 12-atom icosahedra. According to our results, all the chains have a CBC structure. Most of the icosahedra have a B11C structure with the C atom placed in a polar site, and a few percent have a B (12) structure or a B10C2 structure with the two C atoms placed in two antipodal polar sites.

  6. Modification of the titanium alloy surface in electroexplosive alloying with boron carbide and subsequent electron-beam treatment

    Science.gov (United States)

    Gromov, Victor E.; Budovskikh, Evgeniy A.; Ivanov, Yurii F.; Bashchenko, Lyudmila P.; Wang, Xinli; Kobzareva, Tatyana Yu.; Semin, Alexander P.

    2015-10-01

    The modification of the VT6 titanium alloy surface in electroexplosion alloying with plasma being formed in titanium foil with a weighed powder of boron carbide with subsequent irradiation by a pulsed electron beam has been carried out. An electroexplosive alloying zone of a thickness up to 50 μm with a gradient structure is found to form. The subsequent electron-beam treatment of the alloying zone results in smoothing of the alloying surface and is accompanied by the formation of the multilayer structure with alternating layers of various alloying degree at a depth of 30 μm.

  7. Modification of the titanium alloy surface in electroexplosive alloying with boron carbide and subsequent electron-beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gromov, Victor E., E-mail: gromov@physics.sibsiu.ru; Budovskikh, Evgeniy A., E-mail: budovskikh-ea@physics.sibsiu.ru; Bashchenko, Lyudmila P., E-mail: gromov@physics.sibsiu.ru; Kobzareva, Tatyana Yu., E-mail: gromov@physics.sibsiu.ru; Semin, Alexander P., E-mail: gromov@physics.sibsiu.ru [Siberian State Industrial University, Novokuznetsk, 654007 (Russian Federation); Ivanov, Yurii F., E-mail: yufi55@mail.ru [Institute of High Current Electronics SB RAS, Tomsk, 634055 (Russian Federation); National Research Tomsk State University, Tomsk, 634050 (Russian Federation); Wang, Xinli, E-mail: wangxl520@hotmail.com [Northeastern University, Liaoning, Shenyang 110819 China (China)

    2015-10-27

    The modification of the VT6 titanium alloy surface in electroexplosion alloying with plasma being formed in titanium foil with a weighed powder of boron carbide with subsequent irradiation by a pulsed electron beam has been carried out. An electroexplosive alloying zone of a thickness up to 50 μm with a gradient structure is found to form. The subsequent electron-beam treatment of the alloying zone results in smoothing of the alloying surface and is accompanied by the formation of the multilayer structure with alternating layers of various alloying degree at a depth of 30 μm.

  8. Boron carbide, B13-xC2-y (x = 0.12, y = 0.01

    Directory of Open Access Journals (Sweden)

    Oksana Sologub

    2012-08-01

    Full Text Available Boron carbide phases exist over a widely varying compositional range B12+xC3-x (0.06 < x < 1.7. One idealized structure corresponds to the B13C2 composition (space group R-3m and contains one icosahedral B12 unit and one linear C—B—C chain. The B12 units are composed of crystallographically distinct B atoms BP (polar, B1 and BEq (equatorial, B2. Boron icosahedra are interconnected by C atoms via their BEq atoms, forming layers parallel to (001, while the B12 units of the adjacent layers are linked through intericosahedral BP—BP bonds. The unique B atom (BC connects the two C atoms of adjacent layers, forming a C—B—C chain along [001]. Depending on the carbon concentration, the carbon and BP sites exhibit mixed B/C occupancies to varying degrees; besides, the BC site shows partial occupancy. The decrease in carbon content was reported to be realized via an increasing number of chainless unit cells. On the basis of X-ray single-crystal refinement, we have concluded that the unit cell of the given boron-rich crystal contains following structural units: [B12] and [B11C] icosahedra (about 96 and 4%, respectively and C—B—C chains (87%. Besides, there is a fraction of unit cells (13% with the B atom located against the triangular face of a neighboring icosahedron formed by BEq (B2 thus rendering the formula B0.87(B0.98C0.0212(B0.13C0.872 for the current boron carbide crystal.

  9. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  10. Mechanical Behaviour ofAl2014 Reinforced with Boron Carbide and Short Basalt Fiber Based Hybrid Composites

    Directory of Open Access Journals (Sweden)

    Ranganatha S R

    2016-09-01

    Full Text Available The present study was aimed at evaluating the effect of short Basalt Fiber and B4Con hardness and impact strength of Al 2014 Composites. These AMCs with individual and multiple reinforcement (hybrid MMCs are finding increased applications in aerospace, automobile, space, underwater and transportation applications. An effort is made to enhance the Hardness and Impact properties of AMCs by reinforcing Al2014 matrix with Varying Proportion of Short basalt fiber and Boron carbide by stir casting method. Aluminum alloy matrix varying proportions of boron carbide particulates and Short Basalt fibers were fabricated. The microstructure,hardness and impact strength properties of the fabricated AMCs were analyzed. The optical microstructure study revealed the homogeneous dispersion of B4C particles and Short Basalt fiber in the matrix. Based on the results obtained from the Hardness and Impact of the metal matrix composites it is observed that, the hardness and impact strength increases with increase in the amount of reinforcement‘s.

  11. Comparisons of particles thermal behavior between Fe-base alloy and boron carbide during plasma transferred-arc powder surfacing

    Institute of Scientific and Technical Information of China (English)

    王惜宝

    2003-01-01

    Comparisons of particle's thermal behavior between Fe-base alloy and boron carbide in plasma transferred-arc (PTA) space was made based on theoretical evaluation results in this article. It was found that most of the Fe base particles would be fully melted while they transporting through the central plasma field with 200 A surfacing currents. And the particles with a diameter less than 0.5×10-4 m might be fully evaporated. However, for the boron carbide (B4C) particles, only the one with a diameter less than 0.5×10-4 m could be melted in the same PTA space. Most of B4C particles are only preheated at its solid state when they were fed through the central field of PTA plasma when the surfacing current is equal to or less than 200 A. When the arc current was smaller than100 A, only the particles smaller than 0.5×10-4 m could be melted in the PTA space for the Fe-base alloy. Almost none of the discussed B4C particles could be melted in the 100 A PTA space.

  12. Measurements of nanoparticle size distribution produced by laser ablation of tungsten and boron-carbide in N 2 ambient

    Science.gov (United States)

    Bereznai, Miklós; Heszler, Péter; Tóth, Zsolt; Wilhelmsson, Ola; Boman, Mats

    2006-04-01

    Nanoparticles (NPs) were produced by ablating tungsten and boron-carbide (B 4C) target materials in atmospheric pressure nitrogen ambient using ArF excimer laser pulses. The size distributions of the NPs formed during the ablation were monitored—within a 7-133 nm size window—by a condensation particle counter connected to a differential mobility analyzer. The laser repetition rate was varied between 1-50 Hz, and the fluence was systematically changed in the range of 0.5-15 J/cm 2, for both materials, allowing a comparative study in an extended laser parameter regime. The multishot ablation threshold ( Φth) of B 4C was determined to be ˜1.9 J/cm 2 for the laser used (ArF excimer, λ = 193 nm). Similarly to earlier studies, it was shown that the size distributions consist of mainly small nanoparticles (<˜20 nm) attributed to a non-thermal ablation mechanism below Φth. An additional broad peak appears (between 20 and 40 nm) above Φth as a consequence of the thermally induced macroscopic ablation. Chemical composition of deposited polydisperse nanoparticles was studied by X-ray photoelectron spectroscopy showing nitrogen incorporation into the boron-carbide.

  13. Effect of sintering temperature and boron carbide content on the wear behavior of hot pressed diamond cutting segments

    Directory of Open Access Journals (Sweden)

    Islak S.

    2015-01-01

    Full Text Available The aim of this study was to investigate the effect of sintering temperature and boron carbide content on wear behavior of diamond cutting segments. For this purpose, the segments contained 2, 5 and 10 wt.% B4C were prepared by hot pressing process carried out under a pressure of 35 MPa, at 600, 650 and 700 °C for 3 minutes. The transverse rupture strength (TRS of the segments was assessed using a three-point bending test. Ankara andesite stone was cut to examine the wear behavior of segments with boron carbide. Microstructure, surfaces of wear and fracture of segments were determined by scanning electron microscopy (SEM-EDS, and X-ray diffraction (XRD analysis. As a result, the wear rate decreased significantly in the 0-5 wt.% B4C contents, while it increased in the 5-10 wt.% B4C contents. With increase in sintering temperature, the wear rate decreased due to the hard matrix.

  14. Friction stir surfacing of cast A356 aluminium–silicon alloy with boron carbide and molybdenum disulphide powders

    Directory of Open Access Journals (Sweden)

    R. Srinivasu

    2015-06-01

    Full Text Available Good castability and high strength properties of Al–Si alloys are useful in defence applications like torpedoes, manufacture of Missile bodies, and parts of automobile such as engine cylinders and pistons. Poor wear resistance of the alloys is major limitation for their use. Friction stir processing (FSP is a recognized surfacing technique as it overcomes the problems of fusion route surface modification methods. Keeping in view of the requirement of improving wear resistance of cast aluminium–silicon alloy, friction stir processing was attempted for surface modification with boron carbide (B4C and molybdenum disulfide (MoS2 powders. Metallography, micro compositional analysis, hardness and pin-on-disc wear testing were used for characterizing the surface composite coating. Microscopic study revealed breaking of coarse silicon needles and uniformly distributed carbides in the A356 alloy matrix after FSP. Improvement and uniformity in hardness was obtained in surface composite layer. Higher wear resistance was achieved in friction stir processed coating with carbide powders. Addition of solid lubricant MoS2 powder was found to improve wear resistance of the base metal significantly.

  15. Research Progress in Fabrication of Boron Carbide Thin Film%碳化硼薄膜制备的研究进展

    Institute of Scientific and Technical Information of China (English)

    范强; 廖志君; 伍登学

    2008-01-01

    The major properties of boron carbide and preparation methods of boron carbide thin film are reviewed.The advantages and important deposition parameters of these methods including DC/RF magnetron sputtering,ion beam evaporation and chemical vapor deposition are discussed,and the measures of improving the performances of boron carbide thin film are pointed out.It is evident from this review that intensive research still remains to be done and how to prepare the homogeneous boron carbide thin films with higher density,higher film-substrate adhesion and lower internal stress is the key study in the future.%综述了碳化硼材料的主要性能和制备碳化硼薄膜的主要方法,讨论了包括磁控溅射、离子束沉积和化学气相沉积等制备方法的优点及重要工艺参数,并就各方法指出了提高薄膜性能的主要措施,指出制备出更均匀、致密的碳化硼薄膜,提高薄膜与基体间的结合力,降低薄膜应力仍是今后研究的重点.

  16. Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Ohta, Tatsunori, E-mail: s1130011@jaist.ac.jp [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Koyama, Koichi [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ohdaira, Keisuke [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Matsumura, Hideki [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)

    2015-01-30

    We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 °C or even at 80 °C by using species generated by catalytic cracking reaction of phosphine (PH{sub 3}) molecules with heated tungsten (W) catalyzer in Cat-CVD apparatus. As further investigation, here, we study the feasibility of low temperature doping of boron (B) atoms into c-Si by using decomposed species generated similarly from diborane (B{sub 2}H{sub 6}) molecules. Dependency of properties of doped layers on catalyzer temperature (T{sub cat}) and substrate temperature (T{sub s}) is studied by both the Van der Pauw method based on the Hall-effect measurements and secondary ion mass spectroscopy (SIMS) for B doping in addition to P doping. It is found that, similarly to P doping, the surface of n-type c-Si is converted to p-type even at T{sub s} = 80 °C for T{sub cat} over 800 °C when c-Si is exposed to B{sub 2}H{sub 6} cracked species for a few minutes, and that the heat of substrate over 300 °C is likely to help for B doping contrary to P doping.

  17. Deterioration of yttria-stabilized zirconia by boron carbide alone or mixed with metallic or oxidized Fe, Cr, Zr mixtures

    Energy Technology Data Exchange (ETDEWEB)

    De Bremaecker, A., E-mail: adbremae@sckcen.be [Belgian Nuclear Research Center (SCK-CEN), NMS, Mol (Belgium); Ayrault, L., E-mail: laurent.ayrault@cea.fr [Institut de Radio-Protection et Sûreté Nucléaire/DPAM/SEMIC, Bât 702, CEN de Cadarache BP3, F-13115 Saint-Paul-lez-Durance (France); Clément, B. [Institut de Radio-Protection et Sûreté Nucléaire/DPAM/SEMIC, Bât 702, CEN de Cadarache BP3, F-13115 Saint-Paul-lez-Durance (France)

    2014-08-01

    In the frame of severe accident conditions (PHEBUS FPT3 test), different experiments were carried out on the interactions of 20% yttria-stabilized zirconia (YSZ) and 20% ceria-stab zirconia with boron carbide or its oxidation products (B{sub 2}O{sub 3}): either tests under steam between 1230° and 1700 °C with B{sub 4}C alone or B{sub 4}C mixed with metals, either tests under Ar with boron oxide present in a mixture of iron and chromium oxides. In all cases an interaction was observed with formation of intergranular yttrium borate. At 1700 °C boron oxide is able to “pump out” the Y stabiliser from the YSZ grains but also some trace elements (Ca and Al) and to form a eutectic containing YBO{sub 3} and yttrium calcium oxy-borate (YCOB). At the same time a substantial swelling (“bloating”) of the zirconia happens, qualitatively similar to the foaming of irradiated fuel in contact with a Zr-melt. In all samples the lowering of the Y (or Ce)-content in the YSZ grains is so sharp that in the interaction layers zirconia is no longer stabilized. This is important when YSZ is envisaged as simulant of UO{sub 2} or as inert matrix for Am-transmutation.

  18. Deterioration of yttria-stabilized zirconia by boron carbide alone or mixed with metallic or oxidized Fe, Cr, Zr mixtures

    Science.gov (United States)

    De Bremaecker, A.; Ayrault, L.; Clément, B.

    2014-08-01

    In the frame of severe accident conditions (PHEBUS FPT3 test), different experiments were carried out on the interactions of 20% yttria-stabilized zirconia (YSZ) and 20% ceria-stab zirconia with boron carbide or its oxidation products (B2O3): either tests under steam between 1230° and 1700 °C with B4C alone or B4C mixed with metals, either tests under Ar with boron oxide present in a mixture of iron and chromium oxides. In all cases an interaction was observed with formation of intergranular yttrium borate. At 1700 °C boron oxide is able to “pump out” the Y stabiliser from the YSZ grains but also some trace elements (Ca and Al) and to form a eutectic containing YBO3 and yttrium calcium oxy-borate (YCOB). At the same time a substantial swelling (“bloating”) of the zirconia happens, qualitatively similar to the foaming of irradiated fuel in contact with a Zr-melt. In all samples the lowering of the Y (or Ce)-content in the YSZ grains is so sharp that in the interaction layers zirconia is no longer stabilized. This is important when YSZ is envisaged as simulant of UO2 or as inert matrix for Am-transmutation.

  19. Titanium Carbide-Graphite Composites

    Science.gov (United States)

    1991-11-08

    titanium carbide , titanium carbide with free graphite, titanium carbide /vanadium carbide alloy with free graphite, and titanium carbide with...from melts. The test pins were drawn across hot pressed titanium carbide wear plates with 5 newtons of normal force. The lowest friction coefficient at...22 C was 0.12 obtained with pure titanium carbide . The lowest friction coefficient at 900 C was 0.19 obtained with titanium carbide with boron and

  20. Boron carbide: Consistency of components, lattice parameters, fine structure and chemical composition makes the complex structure reasonable

    Science.gov (United States)

    Werheit, Helmut

    2016-10-01

    The complex, highly distorted structure of boron carbide is composed of B12 and B11C icosahedra and CBC, CBB and B□B linear elements, whose concentration depends on the chemical composition each. These concentrations are shown to be consistent with lattice parameters, fine structure data and chemical composition. The respective impacts on lattice parameters are estimated and discussed. Considering the contributions of the different structural components to the energy of the overall structure makes the structure and its variation within the homogeneity range reasonable; in particular that of B4.3C representing the carbon-rich limit of the homogeneity range. Replacing in B4.3C virtually the B□B components by CBC yields the hypothetical moderately distorted B4.0C (structure formula (B11C)CBC). The reduction of lattice parameters related is compatible with recently reported uncommonly prepared single crystals, whose compositions deviate from B4.3C.

  1. Photons transport through ultra-high molecular weight polyethylene based composite containing tungsten and boron carbide fillers

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, S.M. [National Research Center “Kurchatov Institute”, Moscow 123182 (Russian Federation); Kuznetsov, S.A. [Russian State Technological University “MATI”, Moscow 121552 (Russian Federation); Volkov, A.E.; Terekhin, P.N.; Dmitriev, S.V. [National Research Center “Kurchatov Institute”, Moscow 123182 (Russian Federation); Tcherdyntsev, V.V.; Gorshenkov, M.V. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Boykov, A.A., E-mail: kink03@gmail.com [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation)

    2014-02-15

    Highlights: • The developed method for predicting X-ray properties of the polymer. • Higher content of the fillers results in an increase of mechanical properties. • X-ray defensive properties of the samples were investigated experimentally. -- Abstract: Polymers are a base for creating of composite materials with high mechanical and chemical properties. Using the heavy metals as filler in these composites can give them X-ray protective properties. These materials have high deactivation rates and can be used to create Personal Protective Equipment (PPE) used in aggressive environments. It was proposed a model for calculation of X-ray protection properties of the polymer-based nanocomposite materials with ultra-high molecular weight polyethylene (UHMWPE) matrix, filled with tungsten and boron carbide particles. X-ray protective properties were calculated in a wide range of filler content using the developed model. Results of calculations allow selecting most effective compounds of X-ray protective UHMWPE based composites.

  2. Comment on: "Is linear group X-Y-Z in boron carbide the weakest link in the structure?" by S. V. Konovalikhin and V. I. Ponomarev (Russ. J. Phys. Chem. A 89 (10), 1850 (2015))

    Science.gov (United States)

    Werheit, H.

    2016-07-01

    The characterization of the boron carbide investigated in the above-mentioned paper and some of the conclusions made on it by the authors are critically appraised with regard to reliable results obtained earlier by other scientists.

  3. Atomistic Origin of Brittle Failure of Boron Carbide from Large-Scale Reactive Dynamics Simulations: Suggestions toward Improved Ductility

    Science.gov (United States)

    An, Qi; Goddard, William A.

    2015-09-01

    Ceramics are strong, but their low fracture toughness prevents extended engineering applications. In particular, boron carbide (B4C ), the third hardest material in nature, has not been incorporated into many commercial applications because it exhibits anomalous failure when subjected to hypervelocity impact. To determine the atomistic origin of this brittle failure, we performed large-scale (˜200 000 atoms /cell ) reactive-molecular-dynamics simulations of shear deformations of B4C , using the quantum-mechanics-derived reactive force field simulation. We examined the (0001 )/⟨10 1 ¯ 0 ⟩ slip system related to deformation twinning and the (01 1 ¯ 1 ¯ )/⟨1 ¯ 101 ⟩ slip system related to amorphous band formation. We find that brittle failure in B4C arises from formation of higher density amorphous bands due to fracture of the icosahedra, a unique feature of these boron based materials. This leads to negative pressure and cavitation resulting in crack opening. Thus, to design ductile materials based on B4C we propose alloying aimed at promoting shear relaxation through intericosahedral slip that avoids icosahedral fracture.

  4. The local physical structure of amorphous hydrogenated boron carbide: insights from magic angle spinning solid-state NMR spectroscopy.

    Science.gov (United States)

    Paquette, Michelle M; Li, Wenjing; Sky Driver, M; Karki, Sudarshan; Caruso, A N; Oyler, Nathan A

    2011-11-01

    Magic angle spinning solid-state nuclear magnetic resonance spectroscopy techniques are applied to the elucidation of the local physical structure of an intermediate product in the plasma-enhanced chemical vapour deposition of thin-film amorphous hydrogenated boron carbide (B(x)C:H(y)) from an orthocarborane precursor. Experimental chemical shifts are compared with theoretical shift predictions from ab initio calculations of model molecular compounds to assign atomic chemical environments, while Lee-Goldburg cross-polarization and heteronuclear recoupling experiments are used to confirm atomic connectivities. A model for the B(x)C:H(y) intermediate is proposed wherein the solid is dominated by predominantly hydrogenated carborane icosahedra that are lightly cross-linked via nonhydrogenated intraicosahedral B atoms, either directly through B-B bonds or through extraicosahedral hydrocarbon chains. While there is no clear evidence for extraicosahedral B aside from boron oxides, ∼40% of the C is found to exist as extraicosahedral hydrocarbon species that are intimately bound within the icosahedral network rather than in segregated phases.

  5. Ablation of boron carbide for high-order harmonic generation of ultrafast pulses in laser-produced plasma

    Science.gov (United States)

    Ganeev, R. A.; Suzuki, M.; Kuroda, H.

    2016-07-01

    We demonstrate the generation of harmonics up to the 27th order (λ=29.9 nm) of 806 nm radiation in the boron carbide plasma. We analyze the advantages and disadvantages of this target compared with the ingredients comprising B4C (solid boron and graphite) by studying the plasma emission and harmonic spectra from three species. We compare different schemes of the two-color pump of B4C plasma, particularly using the second harmonics of 806 nm laser and optical parametric amplifier (1310 nm) as the assistant fields, as well as demonstrate the sum and difference frequency generation using the mixture of the wavelengths of two laser sources. These studies showed the advantages of the two-color pump of B4C plasma leading to the stable harmonic generation and the growth of harmonic conversion efficiency. We also show that the coincidence of harmonic and plasma emission wavelengths in most cases does not cause the enhancement or decrease of the conversion efficiency of this harmonic. Our spatial characterization of harmonics shows their on-axis modification depending on the conditions of frequency conversion.

  6. Atomistic Origin of Brittle Failure of Boron Carbide from Large-Scale Reactive Dynamics Simulations: Suggestions toward Improved Ductility.

    Science.gov (United States)

    An, Qi; Goddard, William A

    2015-09-01

    Ceramics are strong, but their low fracture toughness prevents extended engineering applications. In particular, boron carbide (B(4)C), the third hardest material in nature, has not been incorporated into many commercial applications because it exhibits anomalous failure when subjected to hypervelocity impact. To determine the atomistic origin of this brittle failure, we performed large-scale (∼200,000  atoms/cell) reactive-molecular-dynamics simulations of shear deformations of B(4)C, using the quantum-mechanics-derived reactive force field simulation. We examined the (0001)/⟨101̅0⟩ slip system related to deformation twinning and the (011̅1̅)/⟨1̅101⟩ slip system related to amorphous band formation. We find that brittle failure in B(4)C arises from formation of higher density amorphous bands due to fracture of the icosahedra, a unique feature of these boron based materials. This leads to negative pressure and cavitation resulting in crack opening. Thus, to design ductile materials based on B(4)C we propose alloying aimed at promoting shear relaxation through intericosahedral slip that avoids icosahedral fracture.

  7. Determination of Abundance of Boron in Boron Carbide Samples with MC-ICP-MS%电感耦合等离子体质谱法测定碳化硼中的硼同位素丰度

    Institute of Scientific and Technical Information of China (English)

    朱留超; 赵永刚; 鹿捷; 张燕; 李力力; 徐常昆; 赵兴红; 王同兴; 姜小燕

    2015-01-01

    以碳酸钙为熔剂高温分解,硝酸浸取、硫酸沉淀的方法处理碳化硼样品,稀释后直接进行多接收电感耦合等离子体质谱分析,对碳化硼中的硼同位素丰度进行测定。扫描电镜分析结果表明,碳化硼颗粒形状不规则,尺寸小于50μm。利用建立的方法处理样品,可实现碳化硼样品的完全溶解,回收率接近100%。对样品中10B丰度进行分析,相对标准偏差为0.023%~0.035%(n=6),测量结果与参考值在不确定度范围内保持一致,证明实验方法可行。所建立的碳化硼样品测量方法样品处理步骤简便,分析速度快,测量精度高,可作为碳化硼中硼同位素丰度的常规分析方法。%A method was developed for the abundance analysis of boron in boron carbide samples by multi-collector inductively coupled plasma mass spectrometry(MC–ICP–MS). The samples were melted with calcium carbonate in muffle furnace, and then dissolved in nitric acid,finally sulfuric acid was added to precipitate the calcium. The particle of boron carbide was analysized by scan electron microscope(SEM). The results showed that the particle shape of boron carbide particle distributed anomaly and the size was less than 50μm. By this method, the boron carbide samples were dissolved entirely and the recovery of whole procedure was approached to 100%. The measurement results of10B abundance obtained were in good accordance with reference value within their expanded uncertainty, which proved the feasibility of the experiment method. The relative standard deviations were 0.023%–0.035%(n=6). The method developed can be applied for the abundance analysis of boron in boron carbide, which have the advantage of simple pretreatment of sample, fast analysis and high measurement precision.

  8. Effect of composition of titanium in silver-copper-titanium braze alloy on dissimilar laser brazing of binder-less cubic boron nitride and tungsten carbide

    Science.gov (United States)

    Sechi, Yoshihisa; Nagatsuka, Kimiaki; Nakata, Kazuhiro

    2014-08-01

    Laser brazing with Ti as an active element in silver-copper alloy braze metal has been carried out for binder-less cubic boron nitride and tungsten carbide, using silver-copper- titanium braze alloys with titanium content that varied between 0.28 mass% and 1.68 mass%. Observations of the interface using electron probe microanalysis and scanning acoustic microscopy show that efficient interface adhesion between binder-less cubic boron nitride and the silver-copper-titanium braze alloy was achieved for the braze with a titanium content of 0. 28 mass%.

  9. A novel technique for production of nano-crystalline mono tungsten carbide single phase via mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Razavi, Mansour, E-mail: m-razavi@merc.ac.ir [Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran (Iran, Islamic Republic of); Rahimipour, Mohammad Reza; Yazdani-Rad, Rahim [Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran (Iran, Islamic Republic of)

    2011-06-09

    Highlights: > By adding WC to mixture of tungsten and carbon black unlike the system which does not contain any additive, it can lead to synthesized mono carbide tungsten. > However, the synthesize time has been reduced significantly. > Crystalline size of two systems were in nano-meter scale, this amount in system contain primary WC which was smaller than system without WC. - Abstract: Due to simultaneous synthesis of WC and W{sub 2}C phases in most of the synthesis processes and lower mechanical properties of W{sub 2}C than WC, in this work the possibility of production of nano-crystalline WC single phase as a useful refractory ceramic by means of mechanical alloying has been investigated. The raw materials containing W and C with WC were milled in a planetary ball mill. The sampling has been done in different times. As it was expected, XRD studies showed that after 75 h of milling the WC with W{sub 2}C were produced. By adding WC to the raw materials in the beginning of the process it led to the fact that after 50 h of milling WC was synthesized only without any other phases which remained stable at the higher times while milling. During broadening of XRD peaks, the size of synthesized crystalline WC was estimated in the order of nano-meter. Crystalline size and mean strain of synthesized WC in the system without additive were higher and lower than the system containing WC, respectively.

  10. Quantification of mass-specific laser energy input converted into particle properties during picosecond pulsed laser fragmentation of zinc oxide and boron carbide in liquids

    Energy Technology Data Exchange (ETDEWEB)

    Lau, Marcus; Barcikowski, Stephan, E-mail: stephan.barcikowski@uni-due.de

    2015-09-01

    Graphical abstract: - Highlights: • Highly defect-rich zinc oxide is obtained by pulsed laser fragmentation in liquids (PLFL). • Bandgap of semiconductor particles can be linearly controlled, simply by the laser energy dose. • Upscaling parameters are derived, that are mass-specific energy input and fragmentation fluence threshold. • Transferability is shown for one of the hardest material known, fabricating crystalline boron carbide nanoparticles. • Conclusions about laser fragmentation mechanisms occurring in liquids are drawn. - Abstract: Pulsed laser fragmentation in liquids is an effective method to fabricate organic, metal or semiconductor nanoparticles by ablation of suspended particles. However, modelling and up-scaling of this process lacks quantification of the laser energy required for a specific product property like particle diameter of the colloid or bandgap energy of the fabricated nanoparticles. A novel set-up for defined laser energy dose in a free liquid jet enables mass-specific energy balancing and exact threshold determination for pulsed laser fragmentation. By this technique laser energy and material responses can be precisely correlated. Linear decrease of the particle diameter and linear increase of the bandgap energy with mass-specific laser energy input has been observed for the examples of ZnO and B{sub 4}C particles. Trends are analysed by density gradient centrifugation, electron microscopy, UV–vis and X-ray diffraction analysis of the crystal structure. The study contributes to quantitative model parameters for up-scaling and provides insight into the mechanisms occurring when suspended particles are irradiated with pulsed laser sources.

  11. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu [Arizona State Univ., Mesa, AZ (United States); Holman, Zachary [Arizona State Univ., Mesa, AZ (United States)

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  12. Research of Boron Carbide-Aluminum Composites%碳化硼-铝复合材料的研究进展

    Institute of Scientific and Technical Information of China (English)

    刘明朗; 韩增尧; 郎静; 马南钢; 吴骁行

    2011-01-01

    Boron carbide ceramics have the properties of high hardness, high melting point and low density, they will be more widely used if they can combine with Al to overcome their faults. Boron carbide-aluminum composites can be divided into aluminum matrix and boron carbide matrix according to the different matrix. The preparation process,interface reaction and wettability are presented in this paper, and the developing tendency of this materials is pointed out Finally, it is pointed out that this materails will be widely used in the fields of large area protection with the deepening of the research.%碳化硼陶瓷具有高硬度、高熔点、低密度的特点,将其与金属铝复合能克服自身缺陷,使其得到更广泛的应用.碳化硼-铝复合材料按照基体的不同可分为铝基和碳化硼基两大类,分别综述了其制备工艺、界面反应以及润湿性,并展望了其发展方向,最后指出,随着研究的深入该复合材料将在大面积防护领域得到广泛应用.

  13. 核用碳化硼制备工艺研究进展%Progress in preparation of boron carbides used as nuclear shielding material

    Institute of Scientific and Technical Information of China (English)

    郑伟; 徐姣; 张卫江

    2011-01-01

    Boron carbides are very important materials in refractory liners, dies, bearings, sandblasting nozzles and nuclear industry. In this paper, the production processes for boron carbides are introduced, which include the carbothermal reduction, self-propagation high-temperature synthesis, chemical vapor deposition and sol-gel carbothermal reduction method. The advantages and disadvantages of all the methods are compared. The difficulties, problems and development direction of how to produce boron carbides are discussed.%碳化硼是一种被广泛应用在耐火材料、模具、轴承、喷嘴和核工业中的新型材料,主要介绍了有关制备碳化硼的工艺,其主要包括碳热还原法、自蔓延热还原法、化学气相沉积法和溶胶-凝胶碳热还原法.通过对比指出各种方法的优缺点,探讨了碳化硼制备的研究现状、存在的问题及发展方向.

  14. Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

    2017-01-15

    The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

  15. DC current and AC impedance measurements on boron-doped single crystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Haitao; Gaudin, O.; Jackman, R.B. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Muret, P.; Gheeraert, E. [Laboratoire d' Etudes des Proprietes Electroniques des Solides, BP166, 38042 Grenoble Cedex 9 (France)

    2003-09-01

    In this paper, we report the first measurement of impedance on boron-doped single crystalline diamond films from 0.1 Hz to 10 MHz with the temperature ranging from -100 C up to 300 C. The Cole-Cole (Z' via Z{sup ''}) plots are well fitted to a RC parallel circuit model and the equivalent Resistance and Capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 70 G{omega} at -100 C to 5 k{omega} at 300 C. The linear curve fitting from -100 C to 150 C shows the sample has an activation energy of 0.37 eV, which is consistent with the theoretical value published of this kind of material. The equivalent capacitance is maintained at the level of pF up to 300 C suggesting that no grain boundaries are being involved, as expected from a single crystal diamond. The activation energy from the dc current-temperature curves is 0.36 eV, which is consistent with the value from ac impedance. The potential of this under-used technique for diamond film analysis will be discussed. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation; Oberflaechenmodifikation des Hartmetalls Wolframkarbid-Kobalt durch Bor-Ionenimplantation

    Energy Technology Data Exchange (ETDEWEB)

    Mrotchek, I.

    2007-09-07

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and {approx}5.10{sup 17} ions/cm{sup 2} fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co{sub 3}W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load.

  17. Role of friction stir processing parameters on microstructure and microhardness of boron carbide particulate reinforced copper surface composites

    Indian Academy of Sciences (India)

    R Sathiskumar; N Murugan; I Dinaharan; S J Vijay

    2013-12-01

    Friction stir processing (FSP) was applied to fabricate boron carbide (B4C) particulate reinforced copper surface composites. The effect of FSP parameters such as tool rotational speed, processing speed and groove width on microstructure and microhardness was investigated. A groove was contrived on the 6mm thick copper plates and packed with B4C particles. FSP was carried out using five various tool rotational speeds, processing speeds and groove widths. Optical and scanning electron microscopies were employed to study the microstructure of the fabricated surface composites. The results indicated that the selected FSP parameters significantly influenced the area of surface composite, distribution of B4C particles and microhardness of the surface composites. Higher tool rotational speed and lower processing speed produced an excellent distribution of B4C particles and higher area of surface composite due to higher frictional heat, increased stirring and material tranportation. The B4C particles were bonded well to the copper matrix and refined the grains of copper due to the pinning effect of B4C particles. B4C particles retained the original size and morphology because of its small size and minimum sharp corners in the morphology.

  18. Microstructural and mechanical characterization of hybrid aluminum matrix composite containing boron carbide and Al-Cu-Fe quasicrystals

    Science.gov (United States)

    Khan, Mahmood; Zulfaqar, Muhammad; Ali, Fahad; Subhani, Tayyab

    2017-07-01

    Hybrid aluminum matrix composites containing particles of boron carbide and quasicrystals were manufactured to explore the combined effect of reinforcements on microstructural evolution and mechanical performance of the composites. The particles were incorporated at a loading of 6 wt% each making a total of 12 wt% reinforcement in pure aluminum. For comparison, two composites containing individually reinforced 12 wt% particles were also prepared along with a reference specimen of pure aluminum. Ball milling technique was employed to mix the composite constituents. The green bodies of composite powders were prepared by uniaxial pressing at room temperature followed by consolidation by pressureless sintering under inert atmosphere. The microstructural characterization was performed using scanning electron microscopy while phase identification was carried out by X-ray diffraction. The mechanical characterization was performed by Vickers hardness and compression tests. Hybrid composites showed increased compressive properties while the composites containing solely quasicrystals demonstrated improved hardness. The increase in mechanical performance was related to the microstructural evolution due to the presence and uniform dispersion of binary particles.

  19. Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan

    2012-01-01

    Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting...... in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white...

  20. Synthesis, characterization and thermoelectric properties of metal borides, boron carbides and carbaborides; Synthese, Charakterisierung und thermoelektrische Eigenschaften ausgewaehlter Metallboride, Borcarbide und Carbaboride

    Energy Technology Data Exchange (ETDEWEB)

    Guersoy, Murat

    2015-07-06

    This work reports on the solid state synthesis and structural and thermoelectrical characterization of hexaborides (CaB{sub 6}, SrB{sub 6}, BaB{sub 6}, EuB{sub 6}), diboride dicarbides (CeB{sub 2}C{sub 2}, LaB{sub 2}C{sub 2}), a carbaboride (NaB{sub 5}C) and composites of boron carbide. The characterization was performed by X-ray diffraction methods and Rietveld refinements based on structure models from literature. Most of the compounds were densified by spark plasma sintering at 100 MPa. As high-temperature thermoelectric properties the Seebeck coefficients, electrical conductivities, thermal diffusivities and heat capacities were measured between room temperature and 1073 K. ZT values as high as 0.5 at 1273 K were obtained for n-type conducting EuB{sub 6}. High-temperature X-ray diffraction also confirmed its thermal stability. The solid solutions Ca{sub x}Sr{sub 1-x}B{sub 6}, Ca{sub x}Ba{sub 1-x}B{sub 6} and Sr{sub x}Ba{sub 1-x}B{sub 6} (x = 0, 0.25, 0.5, 0.75, 1) are also n-type but did not show better ZT values for the ternary compounds compared to the binaries, but for CaB{sub 6} the values of the figure of merit (ca. 0.3 at 1073 K) were significantly increased (ca. 50 %) compared to earlier investigations which is attributed to the densification process. Sodium carbaboride, NaB{sub 5}C, was found to be the first p-type thermoelectric material that crystallizes with the hexaboride-structure type. Seebeck coefficients of ca. 80 μV . K{sup -1} were obtained. Cerium diboride dicarbide, CeB{sub 2}C{sub 2}, and lanthanum diboride dicarbide, LaB{sub 2}C{sub 2}, are metallic. Both compounds were used as model compounds to develop compacting strategies for such layered borides. Densities obtained at 50 MPa were determined to be higher than 90 %. A new synthesis route using single source precursors that contain boron and carbon was developed to open the access to new metal-doped boron carbides. It was possible to obtain boron carbide, but metal-doping could not be

  1. STUDY ON THE DECOMPOSING METHOD IN SAMPLES OF NUCLEAR GRADE BORON CARBIDE%核级碳化硼试样分解方法的研究

    Institute of Scientific and Technical Information of China (English)

    刘若鸣

    2001-01-01

    A method for the decomposition of the nuclear-grade boron carbide sample is proposed in this paper. The powdered boron carbide sample is mixed thoroughly with CaCO3 and fused at 1000℃C in a muffle furnace by raising the temperature at a rate of 300℃ per an hour. The sample in the molten state is kept for 5 h. under 1000℃. The fused sample is cooled and extracted with H2O and acidified with HC1. The sample solution is diluted to 250ml in a volumetric flask and used for the determination of total boron, iron and/or aluminum.%在对核级碳化硼试样的多种分解方法进行简要介绍和分析之后,提出了以碳酸钙作熔剂在高温下分解试样,以盐酸浸取的方法,此方法应用于核级碳化硼中总硼、铁、铝等的测定获得了满意的结果。

  2. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  3. Comparison of the effects of cadmium-shielded and boron carbide-shielded irradiation channel of the Ghana Research Reactor-1

    Energy Technology Data Exchange (ETDEWEB)

    Abrefah, R.G., E-mail: adibola2001@yahoo.com [National Nuclear Research Institute, Ghana Atomic Energy Commission, P.O Box LG80, Legon, Accra (Ghana); Sogbadji, R.B.M.; Ampomah-Amoako, E.; Birikorang, S.A. [National Nuclear Research Institute, Ghana Atomic Energy Commission, P.O Box LG80, Legon, Accra (Ghana); Odoi, H.C. [School of Nuclear and Allied Sciences, University of Ghana, P.O Box AE1, Atomic Energy Post, Accra (Ghana); Nyarko, B.J.B. [National Nuclear Research Institute, Ghana Atomic Energy Commission, P.O Box LG80, Legon, Accra (Ghana)

    2011-08-15

    The MCNP model for the Ghana Research Reactor-1 (GHARR-1) was redesigned to incorporate cadmium-shielded irradiation channel as well as boron carbide-shielded channel in one of the outer irradiation channels. Further investigations were made after initial work in the cadmium-shielded channel to consider the boron carbide-shielded channel and both results were compared to determine the best material for the shielded channel. Before arriving at the final design of only one shielded outer irradiation channel extensive investigations were made into several other possible designs; as all the other designs that were considered did not give desirable results of neutronic performance. The concept of redesigning a new MCNP model which has a shielded channel is to equip GHARR-1 with the means of performing efficient epithermal neutron activation analysis. The use of epithermal neutron activation analysis can be very useful in many experiments and projects (e.g. it can be used to determine uranium and thorium in sediment samples). After the simulation, a comparison of the results from the boron carbide-shielded channel model for the GHARR-1 and the epicadmium-shielded channel was made. The inner irradiation channels of the two designs recorded peak values of approximately 1.18 x 10{sup 12} {+-} 0.0036 n/cm{sup 2} s, 1.32 x 10{sup 12} {+-} 0.0036 n/cm{sup 2} s and 2.71 x 10{sup 11} {+-} 0.0071 n/cm{sup 2} s for the thermal, epithermal and fast neutron flux, respectively. Likewise the outer irradiation channels of the two designs recorded peak values of approximately 7.36 x 10{sup 11} {+-} 0.0042 n/cm{sup 2} s, 2.53 x 10{sup 11} {+-} 0.0074 n/cm{sup 2} s and 4.73 x 10{sup 10} {+-} 0.0162 n/cm{sup 2} s for the thermal, epithermal and fast neutron flux, respectively. The epicadmium design recorded a peak thermal flux of 7.08 x 10{sup 11} {+-} 0.0033 n/cm{sup 2} s and an epithermal flux of 2.09 x 10{sup 11} {+-} 0.006 n/cm{sup 2} s in the irradiation channel where the shield was

  4. New Progress in the Preparation of Sintering and Application of Boron Carbide Ceramics%碳化硼陶瓷的烧结与应用新进展

    Institute of Scientific and Technical Information of China (English)

    杨亮亮; 谢志鹏; 刘维良; 魏红康; 赵琳; 宋明

    2015-01-01

    碳化硼陶瓷具有高硬度、高弹性模量、耐磨损、耐腐蚀等优点,是一种综合性能优异的结构材料。碳化硼陶瓷可通过有效添加剂、适当的温度与压力等条件实现致密化烧结,从而提高其综合性能,因此碳化硼的致密化烧结是其关键技术。本文论述了碳化硼陶瓷致密化烧结工艺的基本原理及烧结方法,在此基础上总结了碳化硼陶瓷在陶瓷装甲、核能和耐磨技术等重要领域的应用。%Boron carbide ceramics are typical structural materials with excellent comprehensive properties, due to their high hardness, high elastic modulus, excellent resistance to wear and corrosion, as well as other advantages. The densiifcation of boron carbide ceramics can be realized by effective additives, appropriate temperature and pressure to improve their mechanical behaviors. Thus, the sintering and densiifcation are the key steps in the entire preparing process. Here, the basic principle and routes of the sintering of boron carbide ceramics are summarized, and their applications in the ifeld of armor, nuclear power, and abrasives are presented.

  5. Cumulative fission yields of short-lived isotopes under natural-abundance-boron-carbide-moderated neutron spectrum

    Energy Technology Data Exchange (ETDEWEB)

    Finn, Erin C.; Metz, Lori A.; Greenwood, Lawrence R.; Pierson, Bruce; Wittman, Richard S.; Friese, Judah I.; Kephart, Rosara F.

    2015-04-09

    The availability of gamma spectroscopy data on samples containing mixed fission products at short times after irradiation is limited. Due to this limitation, data interpretation methods for gamma spectra of mixed fission product samples, where the individual fission products have not been chemically isolated from interferences, are not well-developed. The limitation is particularly pronounced for fast pooled neutron spectra because of the lack of available fast reactors in the United States. Samples containing the actinide isotopes 233, 235, 238U, 237Np, and 239Pu individually were subjected to a 2$ pulse in the Washington State University 1 MW TRIGA reactor. To achieve a fission-energy neutron spectrum, the spectrum was tailored using a natural abundance boron carbide capsule to absorb neutrons in the thermal and epithermal region of the spectrum. Our tailored neutron spectrum is unique to the WSU reactor facility, consisting of a soft fission spectrum that contains some measurable flux in the resonance region. This results in a neutron spectrum at greater than 0.1 keV with an average energy of 70 keV, similar to fast reactor spectra and approaching that of 235U fission. Unique fission product gamma spectra were collected from 4 minutes to 1 week after fission using single-crystal high purity germanium detectors. Cumulative fission product yields measured in the current work generally agree with published fast pooled fission product yield values from ENDF/B-VII, though a bias was noted for 239Pu. The present work contributes to the compilation of energy-resolved fission product yield nuclear data for nuclear forensic purposes.

  6. SINTERING MECHANISM OF PURE AND CARBON_DOPED BORON CARBIDE%纯B4C和掺碳B4C的烧结机制

    Institute of Scientific and Technical Information of China (English)

    尹邦跃; 王零森; 方寅初

    2001-01-01

    Sintering densificaton process of pure and carbon_doped boron carbide powders with 0.42 μm median particle size were studied. Their sintering kinetic equations were obtained according to the influence of sintering temperature and holding time on linear shrinkage rate. The sintering mechanisms were investigated by comparing the characteristic exponent n. It is deduced that the main sintering mechanisms shill be volume diffusion and grain boundary diffusion for pure boron carbide and grain boundary diffusion for carbon_doped boron carbide showing activated sintering. The relative density of the carbon_doped B4C sintered at 2 160 ℃ for 45 min is more than 90%. Apart from those dissolved in the sintered boron carbide, the rest of the added carbon is in the form of free carbon, no new phase formed. Carbon_doping also result in a great decrease of B4C grain size.%研究了中位粒径为0.42 μm的纯B4C和掺碳B4C粉末的烧结致密化过程. 根据烧结温度和保温时间对线收缩率的影响,得出了它们的烧结动力学方程;由特征指数n值对比研究了它们的烧结致密化机制. 纯B4C的烧结致密化机制为体扩散和晶界扩散,而掺碳B4C的烧结机制主要为晶界扩散,因此,掺碳对B4C起到了活化烧结的作用. 在2 160 ℃烧结45 min,掺碳B4C烧结后相对密度大于90%. 掺入的碳除了固溶于B4C晶格中之外,其它均以游离石墨形式存在,不形成新相. 掺碳还导致B4C晶粒尺寸大大减小.

  7. Preparation of Boron Carbide Spherical Films and Hollow Microsphere%碳化硼球面薄膜及空心微球的制备

    Institute of Scientific and Technical Information of China (English)

    于小河; 卢铁城; 林涛; 王自磊; 陶勇; 廖志君

    2012-01-01

    Boron carbide spherical-films were prepared by electron-beam evaporation deposition technique on steel ball substrates,combined with a independently designed magnetron rolling method. The boron carbide micro-shell was obtained after sintering, drilling and corrosion. The microcosmic appearance, microstructure, morphology, element composition of the boron carbide spherical films were investigated. The effect of annealing temperature (800-1100℃) on the boron carbide hollow micro-shells was also studied. The products were characterized by scanning electron microscope (SEM), X-ray photoelectron spectroscope (XPS), atomic force microscope (AFM). The results show that the film is dense without any cracks and pores. Besides, the elemental distribution is well-proportioned. When the annealing temperature is over 900℃, the coating is self-standing formed into a hollow microsphere. The hollow microsphere annealed at 900℃ has the best micro appearance with a thickness over 10μm.%采用电子束蒸发镀膜技术,结合磁控滚动方法在φ1 mm的钢球基底上制备碳化硼球面膜层,通过退火、打孔及腐蚀获得碳化硼空心微球.主要研究了球面膜层的宏观形貌、微观结构、成分及初步探讨了不同退火温度(800~1100℃)对核膜结构空心化的影响.利用扫描电子显微镜(SEM)、X射线光电子能谱分析(XPS)、原子力显微镜(AFM)对球面薄膜表面形态和薄膜元素组成进行了分析.结果表明:磁控滚动模式制备的球面膜层表面平整,没有裂纹和孔洞,元素分布均匀.核膜结构(镀膜时间在5~70 h)经900℃以上温度退火,空心化后的球面膜层可实现自支撑,900℃退火的微球表面形貌最好,壁厚可达10 μm以上.

  8. 碳化硼五次孪晶纳米线的结构弛豫现象研究%Investigation on the structural relaxation of boron carbide five-fold twinned nanowires

    Institute of Scientific and Technical Information of China (English)

    付新; 袁俊

    2011-01-01

    Interface and defects are the important factors controlling the properties of nanoscale materials. Electron microscopy provides comprehensive characterization methods for revealing these nanostructures. Combining systematic electron diffraction analysis and dark field imaging, the internal defects related to the elastic stress relaxation for accommodating the 5° angular excess of boron carbide fivefold twinned nanowires has been analyzed. Meanwhile, a structural relaxation model has been proposed, that is the shifting of twinning axis towards the nanowire periphery which results in the uncompleted cyclically twinned structure with 3 single crystalline segments. Statistic analysis indicates that this structural relaxation is rarely happened in boron carbide five-fold twinned nanowires synthesized by a solid-state reaction at 1100 ℃ , that probably because of the emergence of interface and surfaces with higher energy induced by the lost of the two single crystalline segments and the shift of twinning axis, respectively.%通过透射电子显微学方法研究纳米材料内部结构有助于理解界面与缺陷对纳米材料性能的影响.在碳化硼五次孪晶纳米线体系中,为了缓解5°角度过剩引起的五次孪晶轴心区域的弹性应变能,在纳米线内部会产生一些结构缺陷.本文通过系列电子衍射分析结合暗场成像技术揭示了碳化硼五次循环孪晶纳米线中的一种结构弛豫模式.孪晶轴向纳米线边缘偏移从而导致其中2片单晶结构单元的缺失,形成仅具有3个单晶结构单元的非完整循环孪晶结构.统计分析发现此类结构弛豫现象少量存在于1100C固相烧结合成的碳化硼五次孪晶纳米线中,从能量角度定性分析表明这可能与该结构弛豫发生过程中会产生具有较高能量的界面及表面有关.

  9. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm(-2) on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p(+)/p-wafer full-side-passivated rear-side scheme shown here.

  10. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Pomaska, M., E-mail: m.pomaksa@fz-juelich.de [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Beyer, W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin (Germany); Neumann, E. [Forschungszentrum Jülich, PGI-8-PT, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Finger, F.; Ding, K. [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany)

    2015-11-30

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO{sub x}:H/intrinsic a-SiO{sub x}:H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO{sub x}:H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO{sub x}:H/a-SiO{sub x}:H stack a promising front layer configuration • Void expansion at a-SiO{sub x}:H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  11. Microstructural Characterization and Wear Properties of Fe-Based Amorphous-Crystalline Coating Deposited by Twin Wire Arc Spraying

    Directory of Open Access Journals (Sweden)

    Ana Arizmendi-Morquecho

    2014-01-01

    Full Text Available Twin wire arc spraying (TWAS was used to produce an amorphous crystalline Fe-based coating on AISI 1018 steel substrate using a commercial powder (140MXC in order to improve microhardness and wear properties. The microstructures of coating were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, and transmission electron microscopy (TEM as well as the powder precursor. Analysis in the coating showed the formation of an amorphous matrix with boron and tungsten carbides randomly dispersed. At high amplifications were identified boron carbides at interface boron carbide/amorphous matrix by TEM. This kind of carbides growth can be attributed to partial crystallization by heterogeneous nucleation. These interfaces have not been reported in the literature by thermal spraying process. The measurements of average microhardness on amorphous matrix and boron carbides were 9.1 and 23.85 GPa, respectively. By contrast, the microhardness values of unmelted boron carbide in the amorphous phase were higher than in the substrate, approaching 2.14 GPa. The relative wear resistance of coating was 5.6 times that of substrate. These results indicate that the twin wire arc spraying is a promising technique to prepare amorphous crystalline coatings.

  12. Measurements of nanoparticle size distribution produced by laser ablation of tungsten and boron-carbide in N{sub 2} ambient

    Energy Technology Data Exchange (ETDEWEB)

    Bereznai, Miklos [Department of Optics and Quantum Electronics, University of Szeged, Dom ter 9, 6720 Szeged (Hungary) and Department of Materials Chemistry, Angstroem Laboratory, Uppsala University, PO Box 538, SE-75121 Uppsala (Sweden)]. E-mail: bereznai@physx.u-szeged.hu; Heszler, Peter [Department of Engineering Sciences, Angstroem Laboratory, Uppsala University, PO Box 534, SE-75121 Uppsala (Sweden); Research Group on Laser Physics of the Hungarian Academy of Sciences, University of Szeged, Dom ter 9, 6720 Szeged (Hungary); Toth, Zsolt [Research Group on Laser Physics of the Hungarian Academy of Sciences, University of Szeged, Dom ter 9, 6720 Szeged (Hungary); Wilhelmsson, Ola [Department of Materials Chemistry, Angstroem Laboratory, Uppsala University, PO Box 538, SE-75121 Uppsala (Sweden); Boman, Mats [Department of Materials Chemistry, Angstroem Laboratory, Uppsala University, PO Box 538, SE-75121 Uppsala (Sweden)

    2006-04-30

    Nanoparticles (NPs) were produced by ablating tungsten and boron-carbide (B{sub 4}C) target materials in atmospheric pressure nitrogen ambient using ArF excimer laser pulses. The size distributions of the NPs formed during the ablation were monitored-within a 7-133 nm size window-by a condensation particle counter connected to a differential mobility analyzer. The laser repetition rate was varied between 1-50 Hz, and the fluence was systematically changed in the range of 0.5-15 J/cm{sup 2}, for both materials, allowing a comparative study in an extended laser parameter regime. The multishot ablation threshold ({phi} {sub th}) of B{sub 4}C was determined to be {approx}1.9 J/cm{sup 2} for the laser used (ArF excimer, {lambda} = 193 nm). Similarly to earlier studies, it was shown that the size distributions consist of mainly small nanoparticles (<{approx}20 nm) attributed to a non-thermal ablation mechanism below {phi} {sub th}. An additional broad peak appears (between 20 and 40 nm) above {phi} {sub th} as a consequence of the thermally induced macroscopic ablation. Chemical composition of deposited polydisperse nanoparticles was studied by X-ray photoelectron spectroscopy showing nitrogen incorporation into the boron-carbide.

  13. Micromechanical analysis of a hybrid composite—effect of boron carbide particles on the elastic properties of basalt fiber reinforced polymer composite

    Science.gov (United States)

    Krishna Golla, Sai; Prasanthi, P.

    2016-11-01

    A fiber reinforced polymer (FRP) composite is an important material for structural application. The diversified application of FRP composites has become the center of attention for interdisciplinary research. However, improvements in the mechanical properties of this class of materials are still under research for different applications. The reinforcement of inorganic particles in a composite improves its structural properties due to their high stiffness. The present research work is focused on the prediction of the mechanical properties of the hybrid composites where continuous fibers are reinforced in a micro boron carbide particle mixed polypropylene matrix. The effectiveness of the addition of 30 wt. % of boron carbide (B4C) particle contributions regarding the longitudinal and transverse properties of the basalt fiber reinforced polymer composite at various fiber volume fractions is examined by finite element analysis (FEA). The experimental approach is the best way to determine the properties of the composite but it is expensive and time-consuming. Therefore, the finite element method (FEM) and analytical methods are the viable methods for the determination of the composite properties. The FEM results were obtained by adopting a micromechanics approach with the support of FEM. Assuming a uniform distribution of reinforcement and considering one unit-cell of the whole array, the properties of the composite materials are determined. The predicted elastic properties from FEA are compared with the analytical results. The results suggest that B4C particles are a good reinforcement for the enhancement of the transverse properties of basalt fiber reinforced polypropylene.

  14. Optical properties of boron carbide near the boron K edge evaluated by soft-x-ray reflectometry from a Ru/B(4)C multilayer.

    Science.gov (United States)

    Ksenzov, Dmitriy; Panzner, Tobias; Schlemper, Christoph; Morawe, Christian; Pietsch, Ullrich

    2009-12-10

    Soft-x-ray Bragg reflection from two Ru/B(4)C multilayers with 10 and 63 periods was used for independent determination of both real and imaginary parts of the refractive index n = 1 - delta + ibeta close to the boron K edge (approximately 188 eV). Prior to soft x-ray measurements, the structural parameters of the multilayers were determined by x-ray reflectometry using hard x rays. For the 63-period sample, the optical properties based on the predictions made for elemental boron major deviations were found close to the K edge of boron for the 10-period sample explained by chemical bonding of boron to B(4)C and various boron oxides.

  15. 等离子喷涂B4C涂层的抗辐射性能研究%Anti-radiation behavior of plasma sprayed boron carbide coatings

    Institute of Scientific and Technical Information of China (English)

    李龙根; 徐志勇; 钱浩

    2009-01-01

    目的 研究用等离子技术喷涂的碳化硼(B4C)涂层的抗辐射能力.方法 将0.1 mm厚度B4C涂在16号锰钢上,研究它对加速器产生的6、10、15 MV高能射线,6、9、12、15 MeV高能电子线,60Co γ线和快中子辐射的防护作用.同时将0.1 mm B4C涂在纸板上,研究它对深部X线机的X线辐射的防护作用.结果 等离子喷涂制备B4C涂层对高能X线和60Co γ线没有防护作用.对电子线有一定防护作用,且随深度的增加有增大趋势,但作用不大.对快中子有较大防护作用.对深部X线机X线有防护作用,防护能力较强.0.1 mm厚的涂层就可带来15%的衰减.结论 用等离子技术喷涂的B4C涂层可在医学领域用来防护千伏级射线.%Objective To study anti-radiation behavior of plasma sprayed boron carbide coatings. Methods The anti-radiation capacity of 16Mn steel which was coated with 0.1 mm plasma sprayed boron carbide were studied. The irradiation beams were 6,10,15 MY X-ray and 6,9,12,15 MeV electron emitted by accelerator, X-ray emitted by 60Co machine,fast neutron, and X-ray emitted by kilovoltage X-ray ma-chine. Results Anti-radiation capacity of plasma sprayed boron carbide coatings was not found for X-ray beams emitted by accelerator and 60Co machine. For electron beams,the anti-radiation capacity were found. The deeper of location, the stronger was anti-radiation. However, the anti-radiation capacity was not good. For fast neutron,the anti-radiation capacity was good. For X-ray emitted by kilovoltage X-ray machine,the anti-radiation was good,and only 0.1 nun plasma sprayed boron carbide had 15% attenuation. Conclusions The plasma sprayed boron carbide coatings have the anti-radiation capacity for X-ray emitted by kilovoltage X-ray machine in medical field.

  16. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

    Science.gov (United States)

    Nordell, Bradley J.; Karki, Sudarshan; Nguyen, Thuong D.; Rulis, Paul; Caruso, A. N.; Purohit, Sudhaunshu S.; Li, Han; King, Sean W.; Dutta, Dhanadeep; Gidley, David; Lanford, William A.; Paquette, Michelle M.

    2015-07-01

    Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-BxC:Hy) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (EU), and Tauc parameter (B1/2)], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-BxC:Hy thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm3, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 1010 to 1015 Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ˜1.3 g/cm3 (or below ˜35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters EU and B1/2, with increasing H concentration is explained by the release of strain in the network and associated decrease in structural disorder. All of these correlations in a-BxC:Hy are found to be very similar to those

  17. Cubic silicon carbide and boron nitride as possible primary pressure calibrants for high pressure and temperature scale

    Science.gov (United States)

    Zhuravlev, K. K.; Goncharov, A. F.; Tkachev, S. N.; Prakapenka, V.

    2010-12-01

    K. K. Zhuravlev, A. F. Goncharov Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington DC, 20015 V. Prakapenka, S. N. Tkachev CARS, the University of Chicago, Bldg. 434A, Argonne National Laboratory, 9700 S. Cass. Ave., Argonne, IL 60439 Abstract Since its introduction, ruby-based pressure scale (Mao et al., 1986) has been the most commonly used by the high-pressure scientific community. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, which will be capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently (Goncharov et al., 2005) proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards, i.e. cBN can be a primary pressure calibrant. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment at high pressures in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). Its density and elastic parameters are quite different from the diamond ones and it is stable over the broad range of temperatures and pressures (up to 1 Mbar). SiC-3C is transparent and allows the use of Brillouin spectroscopy. Additionally, SiC-3C has two strong Raman lines, which can be used for the optical in situ pressure measurements. We report our experimental data on both cBN and SiC-3C and show that they, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale. We performed single crystal x-ray diffraction and Brillouin

  18. Synthesis of Boron Carbide Nano Powder by Solid State Reaction%固相反应法合成碳化硼纳米粉体

    Institute of Scientific and Technical Information of China (English)

    曾洪; 阚艳梅; 徐常明; 王佩玲; 张国军

    2011-01-01

    Boron carbide (B4C) powder was synthesized by solid state reaction of hexagonal boron nitride with carbon black (or graphite). The phase assemblages of synthesized powders were influenced by carbon source, atmosphere and temperature. Boron carbide powder with an average particle size of about 100 nm was obtained using carbon black as the carbon source at 1900℃ for 5 h in vacuum. The relative density of the sintered sample (2000℃/30 Mpa/1 h) derived from the synthesized powder reached 97.9%, while that prepared from the commercial powder was 93.1%. The better sinterability of the synthesized powder than the commercial one can be attributed to the finer particle size, lower oxygen content and the twin structure of the powder.%以六方氮化硼和炭黑(或石墨)为原料,采用固相反应法合成了碳化硼粉体.碳源、反应气氛和温度对粉体合成产生重要影响.以炭黑为碳源,在1900℃真空下保温5h,得到了平均粒径约为100 nm的碳化硼纳米粉体.与商业粉体相比,合成的粉体具有较好的烧结活性.在2000℃/30 MPa/1 h条件下烧结,样品的相对密度达到97.9%(商业粉体样品为93.1%),这可归结于合成的粉体具有细小的粒径、低的氧含量和一定程度的孪晶结构.

  19. Application of Special Processing Technology of the Dynamic Pressure Bearing Parts of Boron Carbide%碳化硼材料动压轴承零件的特种加工技术应用

    Institute of Scientific and Technical Information of China (English)

    邵荔宁; 孙保和; 周景春; 翁长志; 刘彪

    2015-01-01

    The performance feature of the material of boron carbide and the structure and the precision of bearing parts of boron carbide were introduced. The problems of the boron carbide machining and the features of special processing technology were presented. The application of pressure bearing parts of boron carbide for ion etching process, electric spark machining and ultrasonic machining and the implementation effect of them were expounded.%简要介绍碳化硼材料的性能特点、碳化硼轴承零件的结构和精度,说明碳化硼材料机械加工存在的问题以及特种加工技术的特点,重点论述了离子刻蚀加工、电火花加工和超声加工技术在碳化硼材料轴承零件加工中的应用情况以及取得的实际效果。

  20. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  1. Boron reclamation

    Energy Technology Data Exchange (ETDEWEB)

    Smith, R.M.

    1980-07-01

    A process to recover high purity /sup 10/B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron.

  2. Preparation and properties of boron carbide film using pulsed laser deposition%碳化硼薄膜的激光法制备及性能

    Institute of Scientific and Technical Information of China (English)

    王淑云; 陆益敏; 刘旭; 黄国俊; 郭延龙; 万强; 田方涛

    2013-01-01

    采用KrF准分子激光器,在Si,Ge光学衬底上制备了碳化硼薄膜,研究了不同激光能量、靶材与衬底距离、衬底负偏压等条件对薄膜性能的影响.利用傅里叶变换红外光谱仪(FT IR)和纳米压痕仪,并依据光学薄膜测试的通用标准,对样品的光学透过率、纳米硬度及膜层与衬底的结合性能进行了测试.结果表明:Si,Ge衬底单面镀碳化硼薄膜后最高透过率提高10%以上,纳米硬度提高到未镀膜的3倍以上,且膜层与衬底有较好的结合性能,表明制备的碳化硼薄膜可对光学材料起到较好的增透保护作用.%Boron carbide films were deposited on Si and Ge substrates using KrF eximer laser. Influences of laser energy, distance between the target and substrate, and bias voltage were studied. A Fourier transform infrared spectroscope and a nano-indenter were used to test the optical transmission and hardness of the samples. Furthermore, the adhesion performance of the film and substrate was tested according to the common criterion of optical films. The largest transmission of Si and Ge advanced 10% after only one surface of substrates was coated by boron carbide films. The nano-hardness of the coated substrates reached more than 3 times that of the uncoated substrates and the adhesion was also satisfactory. The results show that boron carbide films are useful as anti-reflective and protective films for optical substrates.

  3. Dispersing stability of nano boron carbide in water-based fluid%纳米碳化硼在水基础液中的分散稳定性

    Institute of Scientific and Technical Information of China (English)

    宋铮铮; 吴张永; 莫子勇; 王娴; 王娟

    2015-01-01

    以纳米碳化硼粉体为纳米材料,聚乙二醇、羧甲基纤维素钠为分散剂,蒙脱石为抗沉降稳定剂,RO反渗透膜处理水为分散介质,采用两步法制备了水基纳米碳化硼溶液。研究了不同分散条件对纳米碳化硼在水基础液中的分散情况,并采用沉降稳定性分析、流变特性分析来评价其分散效果。实验结果表明,分散剂种类、分散剂质量分数、纳米碳化硼的粒径、纳米碳化硼的质量分数都会对溶液分散稳定性产生一定的影响。研究得出,用质量分数为0.4%的聚乙二醇(PEG600)作为分散剂、用粒径为60nm的纳米碳化硼且质量分数为0.8%~0.9%时,能够使得纳米碳化硼在水基础液中达到最佳稳定分散的效果。%Water-based nano boron solution was prepared with nano boron carbide powder as nanomaterial,polyethylene glycol,sodium carboxymethyl cellulose as dispersing agent, montmorillonite as antisedimentation stabilizer,RO reverse osmosis membrane-treated water as dispersion medium by using the two-step method. To study the different dispersion conditions of nano boron carbide dispersion in water-based fluid,sedimentation stability and rheological characteristics analysis were used to evaluate its dispersion effect. The experimental results showed that dispersant type,mass fraction of dispersant,particle size of nano boron carbide,mass fraction of nano boron carbide could affect stability of solution dispersion. Polyethylene glycol 600 as a dispersant,mass fraction of 0.4%,60nm particle size of nano-boron carbide and mass fraction of 0.8%-0.9%,could achieve stable dispersion of nano boron carbide in water-based fluid.

  4. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Nordell, Bradley J.; Karki, Sudarshan; Nguyen, Thuong D.; Rulis, Paul; Caruso, A. N.; Paquette, Michelle M., E-mail: paquettem@umkc.edu [Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); Purohit, Sudhaunshu S. [Department of Chemistry, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); Li, Han; King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Dutta, Dhanadeep; Gidley, David [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lanford, William A. [Department of Physics, University at Albany, Albany, New York 12222 (United States)

    2015-07-21

    Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-B{sub x}C:H{sub y}) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (E{sub U}), and Tauc parameter (B{sup 1/2})], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-B{sub x}C:H{sub y} thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm{sup 3}, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 10{sup 10} to 10{sup 15} Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ∼1.3 g/cm{sup 3} (or below ∼35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters E{sub U} and B{sup 1/2}, with increasing H concentration is explained by the release of strain in the network and associated decrease in

  5. Nanomechanical and in situ TEM characterization of boron carbide thin films on helium implanted substrates: Delamination, real-time cracking and substrate buckling

    Energy Technology Data Exchange (ETDEWEB)

    Framil Carpeño, David, E-mail: david.framil-carpeno@auckland.ac.nz [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand); Ohmura, Takahito; Zhang, Ling [Strength Design Group, Structural Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Leveneur, Jérôme [National Isotope Centre, GNS Science, 30 Gracefield Road, Gracefield, Lower Hutt 5010 (New Zealand); Dickinson, Michelle [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand); Seal, Christopher [International Centre for Advanced Materials, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Kennedy, John [National Isotope Centre, GNS Science, 30 Gracefield Road, Gracefield, Lower Hutt 5010 (New Zealand); Hyland, Margaret [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand)

    2015-07-15

    Boron carbide coatings deposited on helium-implanted and unimplanted Inconel 600 were characterized using a combination of nanoindentation and transmission electron microscopy. Real-time coating, cracking and formation of slip bands were recorded using in situ TEM-nanoindentation, allowing site specific events to be correlated with specific features in their load–displacement curves. Cross-sections through the residual indent impression showed a correlation between pop-outs in the load–displacement curves and coating delamination, which was confirmed with cyclic indentation experiments. Inconel exhibits (-11-1) and (1-1-1) twin variants in its deformed region beneath the indenter, organized in bands with a ladder-like arrangement. The nanomechanical properties of the metal–ceramic coating combinations exhibit a marked substrate effect as a consequence of helium implantation.

  6. Creep behavior and wear resistance of Al 5083 based hybrid composites reinforced with carbon nanotubes (CNTs) and boron carbide (B{sub 4}C)

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, Ali [Faculty of Materials & Manufacturing Processes, Malek-e-Ashtar University of Technology, Tehran (Iran, Islamic Republic of); Abdollahi, Alireza, E-mail: alirezaabdollahi1366@gmail.com [Faculty of Materials & Manufacturing Processes, Malek-e-Ashtar University of Technology, Tehran (Iran, Islamic Republic of); Biukani, Hootan [Faculty of Engineering, South Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-25

    In the current research, aluminum based hybrid composite reinforced with boron carbide (B{sub 4}C) and carbon nanotubes (CNTs) was produced by powder metallurgy method. creep behavior, wear resistance, surface roughness, and hardness of the samples were investigated. To prepare the samples, Al 5083 powder was milled with boron carbide particles and carbon nanotubes using planetary ball mill under argon atmosphere with ball-to-powder weight ratio of 10:1 for 5 h. Afterwards, the milled powders were formed by hot press process at 380{sup °}C and then were sintered at 585{sup °}C under argon atmosphere for 2 h. There was shown to be an increase in hardness values of composite with an increase in B{sub 4}C content. The micrograph of worn surfaces indicate a delamination mechanism due to the presence of CNTs and abrasion mechanism in composite containing 10 vol.%B{sub 4}C. Moreover, it was shown that increasing B{sub 4}C content increases the wear resistance by 3 times under a load of 20 N and 10 times under a load of 10 N compared to CNTs-reinforced composite. surface roughness of the composite containing 5 vol.%CNT has shown to be more than other samples. The results of creep test showed that adding carbon nanotubes increases creep rate of Al 5083 alloy; however, adding B{sub 4}C decreases its creep rate. - Highlights: • Al 5083/(CNTs + B{sub 4}C) hybrid composite was produced by powder metallurgy method. • Creep behavior, wear resistance, surface roughness, and Hardness of samples were investigated. • Addition of CNTs to Al 5083 matrix reduces alloy hardness, wear resistance and creep strength. • By addition of B{sub 4}C and composite hybridization, creep strength and wear resistance increased. • Surface roughness of Al-5 vol.%CNT has shown to be more than other samples.

  7. Single-step synthesis of crystalline h-BN quantum- and nanodots embedded in boron carbon nitride films

    Science.gov (United States)

    Matsoso, Boitumelo J.; Ranganathan, Kamalakannan; Mutuma, Bridget K.; Lerotholi, Tsenolo; Jones, Glenn; Coville, Neil J.

    2017-03-01

    Herein we report on the synthesis and characterization of novel crystalline hexagonal boron nitride (h-BN) quantum- and nanodots embedded in large-area boron carbon nitride (BCN) films. The films were grown on a Cu substrate by an atmospheric pressure chemical vapour deposition technique. Methane, ammonia, and boric acid were used as precursors for C, N and B to grow these few atomic layer thick uniform films. We observed that both the size of the h-BN quantum/nanodots and thickness of the BCN films were influenced by the vaporization temperature of boric acid as well as the H3BO3 (g) flux over the Cu substrate. These growth conditions were easily achieved by changing the position of the solid boric acid in the reactor with respect to the Cu substrate. Atomic force microscope (AFM) and TEM analyses show a variation in the h-BN dot size distribution, ranging from nanodots (∼224 nm) to quantum dots (∼11 nm) as the B-source is placed further away from the Cu foil. The distance between the B-source and the Cu foil gave an increase in the C atomic composition (42 at% C–65 at% C) and a decrease in both B and N contents (18 at% B and 14 at% N to 8 at% B and 7 at% N). UV–vis absorption spectra showed a higher band gap energy for the quantum dots (5.90 eV) in comparison with the nanodots (5.68 eV) due to a quantum confinement effect. The results indicated that the position of the B-source and its reaction with ammonia plays a significant role in controlling the nucleation of the h-BN quantum- and nanodots. The films are proposed to be used in solar cells. A mechanism to explain the growth of h-BN quantum/nanodots in BCN films is reported.

  8. Ballistic behavior of boron carbide reinforced AA7075 aluminium alloy using friction stir processing–An experimental study and analytical approach

    Institute of Scientific and Technical Information of China (English)

    I. SUDHAKAR; G. MADHUSUDHAN REDDY; K. SRINIVASA RAO

    2016-01-01

    High strength-to-weight ratio of non-ferrous alloys, such as aluminium, magnesium and titanium alloys, are considered to be possible replacement of widely accepted steels in transportation and automobile sectors. Among these alloys, magnesium is self explosive and titanium is costlier, and aluminium is most likely to replace steels. Application of aluminium or its alloys is also thought of as an appropriate replacement in defence field, especially to enhance the easiness in mobility of combat vehicles while maintaining the same standard as that of conventional armour grade steels. Hence most of the investigations have been confined to aluminium or its alloys as base material and open an era of developing the newer composite materials to address the major limitation, i.e. tribological properties. The surface composites can be fabricated by incorporating the ceramic carbides like silicon carbide, carbides of transition metals and oxides of aluminium using surface modification techniques, such as high energy laser melt treatment, high energy electron beam irradiation and thermal spray process which are based on fusion route. These techniques yield the fusion related problems, such as interfacial reaction, pin holes, shrinkage cavities or voids and other casting related defects, and pave the way to need of an efficient technique which must be based on solid state. Recently developed friction stir processing technique was used in the present investigation for surface modification of AA7075 aluminum alloy, which is an alternative to steels. In the present investigation, 160μm sized boron carbide powder was procured and was reduced to 60μm and 30μm using high energy ball mill. Subsequently these powders were used to fabricate the surface composites using friction stir processing. Ballistic performance testing as per the military standard (JIS.0108.01) was carried out. In the present work, an analytical method of predicting the ballistic behavior of surface composites

  9. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    Energy Technology Data Exchange (ETDEWEB)

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke [Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Nomi-shi, Ishikawa-ken 923-1292 (Japan)

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  10. Growth of Structured Non-crystalline Boron-Oxygen-Nitrogen Films and Measurement of Their Electrical Properties

    Institute of Scientific and Technical Information of China (English)

    CHEN Guang-Chao(陈广超); LU Fan-Xiu(吕反修); J.-H.Boo

    2003-01-01

    The boron-oxygen-nitrogen (BON) films have been grown on Si wafer by the low-frequency rf-plasma-enhanced metal-organic chemical vapour deposition method. The homogeneous film structure of completely amorphous BON is first fabricated on a low-temperature-made buffer at 500° C with N2 plasma and is observed with a high resolution-electron microscope by the transmission-electron diffraction. The results show that the interfaces among substrate/buffer/film are clear and straight in the structured film. A heterogeneous film containing nano-sized crystalline particles is also grown by a routine growth procedure as a referential structure. The C - V characteristic is measured on both the amorphous and crystal-containing films by using the metal-oxidesemiconductor structure. The dielectric constants of the films are, therefore, deduced to be 5.9 and 10.5 for the amorphous and crystal-containing films, respectively. The C - V results also indicate that more trapped charges exist in the amorphous film. The binding energy of the B, O, and N atoms in the amorphous film is higher than that in the crystal-containing one, and the N-content in the latter is found to be higher than that in the former by x-ray photo-electron spectroscopy. The different electrical property of the films is thought to originate from the energy state of the covalent electrons.

  11. Facile Synthesis of Highly Crystalline and Large Areal Hexagonal Boron Nitride from Borazine Oligomers

    Science.gov (United States)

    Park, Sungchan; Seo, Tae Hoon; Cho, Hyunjin; Min, Kyung Hyun; Lee, Dong Su; Won, Dong-Il; Kang, Sang Ook; Kim, Myung Jong

    2017-01-01

    A novel and facile synthetic method for h-BN films from borazine oligomer (B3N3H4)x precursors has been developed. This method only includes spin-coating of borazine oligomer onto nickel catalysts and a subsequent annealing step. Large areal and highly crystalline h-BN films were obtained. The stoichiometric B/N ratio of borazine oligomer precursor was preserved in the final h-BN product such that it was close to 1 as revealed by XPS. Catalytic effect of nickel for h-BN formation was clearly demonstrated by lowering crystallization temperature compared to the growth condition in the absence of catalyst. The graphene field effect transistor (GFET) characterization has proved the high quality synthesis of h-BN films, showing the shift of neutrality point and the increase of the mobility. This method can also provide functional h-BN coating on various surfaces by annealing Ni-coated borazine oligomer films and subsequent removal of Ni catalyst. PMID:28074854

  12. Carbon-rich icosahedral boron carbides beyond B4C and their thermodynamic stabilities at high temperature and pressure from first principles

    Science.gov (United States)

    Ektarawong, A.; Simak, S. I.; Alling, B.

    2016-08-01

    We investigate the thermodynamic stability of carbon-rich icosahedral boron carbide at different compositions, ranging from B4C to B2C , using first-principles calculations. Apart from B4C , generally addressed in the literature, B2.5C , represented by B10C2p (C-C), where Cp and (C-C) denote a carbon atom occupying the polar site of the icosahedral cluster and a diatomic carbon chain, respectively, is predicted to be thermodynamically stable under high pressures with respect to B4C as well as pure boron and carbon phases. The thermodynamic stability of B2.5C is determined by the Gibbs free energy G as a function of pressure p and temperature T , in which the contributions from the lattice vibrations and the configurational disorder are obtained within the quasiharmonic and the mean-field approximations, respectively. The stability range of B2.5C is then illustrated through the p -T phase diagrams. Depending on the temperatures, the stability range of B2.5C is predicted to be within the range between 40 and 67 GPa. At T ≳ 500 K, the icosahedral Cp atoms in B2.5C configurationally disorder at the polar sites. By investigating the properties of B2.5C , e.g., elastic constants and phonon and electronic density of states, we demonstrate that B2.5C is both mechanically and dynamically stable at zero pressure, and is an electrical semiconductor. Furthermore, based on the sketched phase diagrams, a possible route for experimental synthesis of B2.5C as well as a fingerprint for its characterization from the simulations of x-ray powder diffraction pattern are suggested.

  13. 碳化硼微孔喷嘴的注射成形工艺及其表面质量%Process and Surface Quality of Injection Molded Boron Carbide Nozzle with Micro Multi-holes

    Institute of Scientific and Technical Information of China (English)

    王长瑞; 卢振; 张凯锋; 王振龙

    2012-01-01

    利用粉末注射成形工艺制备碳化硼微孔喷嘴.研究了注射、脱脂和烧结工艺对碳化硼微孔喷嘴的微观形貌和成形质量的影响.结果表明,当模具温度为60℃、注射压力为100MPa、注射温度为175℃的情况下,微孔喷嘴得到良好的填充.脱脂后制品未发现裂纹和翘曲.随着烧结温度的升高,微孔喷嘴的致密度和线性收缩先增加后减小,表面粗糙度先减小后增加,在1950℃烧结后,微孔喷嘴的烧结性能和力学性能最好,致密度、线性收缩、维氏硬度和表面粗糙度值分别为97.1%,18.7%,3580HV和6.17μm.%Boron carbide nozzle with micro multi-holes was fabricated by powder injection molding. The effects of injection molding, debinding, sintering on microstructure and forming quality of boron carbide nozzle were investigated. The results show that boron carbide nozzle can be filled completely with appropriate molding parameters in mold temperature of 60℃ , injection pressure of 100 MPa and nozzle temperature of 175℃. Cracks and warps are not found on the surface of debound product. Densities and linear shrinkages of boron carbide nozzle begin to increase and then decrease with the increasing of sintering temperature, however, the values of surface roughness begin to decrease and then increase. Boron carbide nozzle achieves the best forming and mechanical performances after sintering at 1950℃ of which the density, linear shrinkage, Vickers hardness and value of surface roughness are 97. 1% , 18. 7% , 3580HV and 6. 17pm, respectively.

  14. Effect of Glucose Additives on the Properties of Pressureless-sintered Boron Carbide%葡萄糖助剂对无压烧结碳化硼性能的影响

    Institute of Scientific and Technical Information of China (English)

    袁义鹏; 姜宏伟; 郑友进

    2016-01-01

    采用有机葡萄糖作为烧结助剂提升碳化硼陶瓷的烧结性能.1.5微米碳化硼粉中加入4%葡萄糖,模压成型,在不同温度下烧结,对样品硬度、密度、表面形貌和晶体结构进行测试.实验结果表明:添加4%葡萄糖助剂,在2200℃得到的碳化硼样品密度和硬度高于纯碳化硼2250℃烧结的样品;通过一定的烧结工艺可以使碳进入到碳化硼晶格中,与晶粒间的游离碳共同起到促进碳化硼晶粒的扩散作用,扩散行为完成时存在于空隙中的碳起到钉扎作用,成为增强机制之一.%The sintering properties of boron carbide ceramics were promoted by the organic glucose containing carbon as a sintering aid .In the 1 .5 micron boron carbide pow der ,4%glucose was added into the mould ,and the samples were sintered at different tempera‐tures .No additives sintered samples were compared .Hardness ,density ,surface morpholo‐gy and crystal structure of the samples were tested .The results showed that the density and hardness of boron carbide samples with the addition of 4% glucose obtained at 2200℃were higher than those of pure boron carbide 2250℃ sintered samples .Organic glucose as a sintering aid can improve the liquid phase power in sintering process ,which can be used to prevent the grow th of alumina grain by means of additives or intermediate phase ,w hich can improve the sintering properties of boron carbide at atmospheric pressure .

  15. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  16. A combination method for simulation of secondary knock-on atoms of boron carbide induced by neutron irradiation in SPRR-300

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian-Chun [Key Laboratory of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Feng, Qi-Jie; Liu, Xian-Kun [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China); Zhan, Chang-Yong [Key Laboratory of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Zou, Yu, E-mail: zouyu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Liu, Yao-Guang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China)

    2016-02-01

    A multiscale sequence of simulation should be used to predict properties of materials under irradiation. Binary collision theory and molecular dynamics (MDs) method are commonly used to characterize the displacement cascades induced by neutrons in a material. In order to reduce the clock time spent for the MD simulation of damages induced by high-energy primary knock-on atoms (PKAs), the damage zones were split into sub-cascade according to the sub-cascade formation criteria. Two well-known codes, Geant4 and TRIM, were used to simulate high-energy PKA-induced cascades in B{sub 4}C and then produce the secondary knock-on atom (SKA) energy spectrum. It has been found that both high-energy primary knock-on B and C atoms move a long range in the boron carbide. These atoms produce sub-cascades at the tip of trajectory. The energy received by most of the SKAs is <10 keV, which can be used as input to reduce the clock time spent for MD simulation.

  17. A combination method for simulation of secondary knock-on atoms of boron carbide induced by neutron irradiation in SPRR-300

    Science.gov (United States)

    Wu, Jian-Chun; Feng, Qi-Jie; Liu, Xian-Kun; Zhan, Chang-Yong; Zou, Yu; Liu, Yao-Guang

    2016-02-01

    A multiscale sequence of simulation should be used to predict properties of materials under irradiation. Binary collision theory and molecular dynamics (MDs) method are commonly used to characterize the displacement cascades induced by neutrons in a material. In order to reduce the clock time spent for the MD simulation of damages induced by high-energy primary knock-on atoms (PKAs), the damage zones were split into sub-cascade according to the sub-cascade formation criteria. Two well-known codes, Geant4 and TRIM, were used to simulate high-energy PKA-induced cascades in B4C and then produce the secondary knock-on atom (SKA) energy spectrum. It has been found that both high-energy primary knock-on B and C atoms move a long range in the boron carbide. These atoms produce sub-cascades at the tip of trajectory. The energy received by most of the SKAs is <10 keV, which can be used as input to reduce the clock time spent for MD simulation.

  18. Spark Plasma Sintering of Aluminum-Magnesium-Matrix Composites with Boron Carbide and Tungsten Nano-powder Inclusions: Modeling and Experimentation

    Science.gov (United States)

    Dvilis, E. S.; Khasanov, O. L.; Gulbin, V. N.; Petyukevich, M. S.; Khasanov, A. O.; Olevsky, E. A.

    2016-03-01

    Spark-plasma sintering (SPS) is used to fabricate fully-dense metal-matrix (Al/Mg) composites containing hard ceramic (boron carbide) and refractory metal (tungsten) inclusions. The study objectives include the modeling (and its experimental verification) of the process of the consolidation of the composites consisted of aluminum-magnesium alloy AMg6 (65 wt.%), B4C powder (15 wt.%), and W nano-powder (20 wt.%), as well as the optimization of the composite content and of the SPS conditions to achieve higher density. Discrete element modeling of the composite particles packing based on the particle size distribution functions of real powders is utilized for the determination of the powder compositions rendering maximum mixture packing densities. Two models: a power-law creep model of the high temperature deformation of powder materials, and an empirical logarithmic pressure-temperature-relative density relationship are successfully applied for the description of the densification of the aluminum-magnesium metal matrix powder composite subjected to spark-plasma sintering. The elastoplastic properties of the sintered composite samples are assessed by nanoindentation.

  19. THE RESEARCH OF POROUS BORON CARBIDE MOLDING TECHNOLOGY%多孔碳化硼成型工艺的研究

    Institute of Scientific and Technical Information of China (English)

    李鹏; 陈玉强; 杨金茹

    2011-01-01

    利用有机泡沫浸渍工艺制备了孔径为0.5mm左右的碳化硼多孔预制体,研究了海绵表面预处理及固相含量对挂浆量的影响,通过SEM、XBD对制品进行了表面形貌的观查及物相分析,研究表明海绵的预处理可有效提高挂浆量,浆料固相含量在30~35%vol时浸渍效果最佳。%Using organic foam impregnation process was about 0.5mm in bore diameter boron carbide porous precast body, we studies sponge surface pretreatment and solid content slurry to hang the amount of influence, through the SEM, XRD to samples of the surface morphology observation and physical phase analysis.The research shows that the pretreatment of the sponge can effectively increase the quantity size, hang pulp solid content at 30 - 35% consider best effect.

  20. Effect of particle size and percentages of Boron carbide on the thermal neutron radiation shielding properties of HDPE/B4C composite: Experimental and simulation studies

    Science.gov (United States)

    Soltani, Zahra; Beigzadeh, Amirmohammad; Ziaie, Farhood; Asadi, Eskandar

    2016-10-01

    In this paper the effects of particle size and weight percentage of the reinforcement phase on the absorption ability of thermal neutron by HDPE/B4C composites were investigated by means of Monte-Carlo simulation method using MCNP code and experimental studies. The composite samples were prepared using the HDPE filled with different weight percentages of Boron carbide powder in the form of micro and nano particles. Micro and nano composite were prepared under the similar mixing and moulding processes. The samples were subjected to thermal neutron radiation. Neutron shielding efficiency in terms of the neutron transmission fractions of the composite samples were investigated and compared with simulation results. According to the simulation results, the particle size of the radiation shielding material has an important role on the shielding efficiency. By decreasing the particle size of shielding material in each weight percentages of the reinforcement phase, better radiation shielding properties were obtained. It seems that, decreasing the particle size and homogeneous distribution of nano forms of B4C particles, cause to increase the collision probability between the incident thermal neutron and the shielding material which consequently improve the radiation shielding properties. So, this result, propose the feasibility of nano composite as shielding material to have a high performance shielding characteristic, low weight and low thick shielding along with economical benefit.

  1. Microstructure and pitting corrosion of armor grade AA7075 aluminum alloy friction stir weld nugget zone – Effect of post weld heat treatment and addition of boron carbide

    Directory of Open Access Journals (Sweden)

    P. Vijaya Kumar

    2015-06-01

    Full Text Available Friction stir welding (FSW of high strength aluminum alloys has been emerged as an alternative joining technique to avoid the problems during fusion welding. In recent times FSW is being used for armor grade AA7075 aluminum alloy in defense, aerospace and marine applications where it has to serve in non uniform loading and corrosive environments. Even though friction stir welds of AA7075 alloy possess better mechanical properties but suffer from poor corrosion resistance. The present work involves use of retrogression and reaging (RRA post weld heat treatment to improve the corrosion resistance of welded joints of aluminum alloys. An attempt also has been made to change the chemical composition of the weld nugget by adding B4C nano particles with the aid of the FSW on a specially prepared base metal plate in butt position. The effects of peak aged condition (T6, RRA and addition of B4C nano particles on microstructure, hardness and pitting corrosion of nugget zone of the friction stir welds of AA7075 alloy have been studied. Even though RRA improved the pitting corrosion resistance, its hardness was slightly lost. Significant improvement in pitting corrosion resistance was achieved with addition of boron carbide powder and post weld heat treatment of RRA.

  2. Monte carlo simulation of innovative neutron and photon shielding material composing of high density concrete, waste rubber, lead and boron carbide

    Science.gov (United States)

    Aim-O, P.; Wongsawaeng, D.; Phruksarojanakun, P.; Tancharakorn, S.

    2017-06-01

    High-density concrete exhibits high strength and can perform an important role of gamma ray attenuation. In order to upgrade this material’s radiation-shielding performance, hydrogen-rich material can be incorporated. Waste rubber from vehicles has high hydrogen content which is the prominent characteristic to attenuate neutron. The objective of this work was to evaluate the radiation-shielding properties of this composite material against neutron and photon radiations. Monte Carlo transport simulation was conducted to simulate radiation through the composite material. Am-241/Be was utilized for neutron source and Co-60 for photon source. Parameters of the study included volume percentages of waste rubber, lead and boron carbide and thickness of the shielding material. These designs were also fabricated and the radiation shielding properties were experimentally evaluated. The best neutron and gamma ray shielding material was determined to be high-density concrete mixed with 5 vol% crumb rubber and 5 vol% lead powder. This shielding material increased the neutron attenuation by 64% and photon attenuation by 68% compared to ordinary concrete. Also, increasing the waste rubber content to greater than 5% resulted in a decrease in the radiation attenuation. This innovative composite radiation shielding material not only benefits nuclear science and engineering applications, but also helps solve the environmental issue of waste rubber.

  3. Electro-explosive alloying of VT6 alloy surface by boron carbide powder with the subsequent electron-beam treatment

    Science.gov (United States)

    Romanov, D. A.; Raykov, S. V.; Gromov, V. E.; Ivanov, Yu F.

    2015-11-01

    The formation of electro-explosive alloying zone with the thickness up to 50 μm has been revealed. It has been shown that it has a gradient structure, characterized by the decrease of carbon and boron concentration with the increase of the distance up to the treatment surface. The subsequent electron-beam treatment of alloying zone leads to flattening of alloying surface relief and is accompanied by the formation of a multilevel structure at the depth up to 30 μm, characterized by the interchange of some layers with a different level of alloying, having structure of a submicro- and nanoscale level.

  4. Submicron-sized boron carbide particles encapsulated in turbostratic graphite prepared by laser fragmentation in liquid medium.

    Science.gov (United States)

    Ishikawa, Yoshie; Sasaki, Takeshi; Koshizaki, Naoto

    2010-08-01

    Submicron-sized B4C spherical particles were obtained by laser fragmentation of large B4C particles dispersed in ethyl acetate. The irradiated surface of large B4C raw particles was heated and melted by laser energy absorption. B4C droplets were then cooled down, and finally B4C spherical particles were obtained. Moreover, each B4C particle obtained was encapsulated in a graphitic layer that is useful for medical functionalization of particles. Thus, obtained B4C particles encapsulated in graphitic layer may have potential uses in boron neutron capture therapy.

  5. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    Science.gov (United States)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  6. Ab initio density functional theory investigation of crystalline bundles of polygonized single-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)], E-mail: moradian.rostam@gmail.com

    2008-11-19

    By using ab initio density functional theory, the structural characterizations and electronic properties of two large-diameter (13, 13) and (14, 14) armchair silicon carbide nanotube (SiCNT) bundles are investigated. Full structural optimizations show that the cross sections of these large-diameter SiCNTs in the bundles have a nearly hexagonal shape. The effects of inter-tube coupling on the electronic dispersions of large-diameter SiCNT bundles are demonstrated. By comparing the band structures of the triangular lattices of (14, 14) SiCNTs with nearly hexagonal and circular cross sections we found that the polygonization of the tubes in the bundle leads to a further dispersion of the occupied bands and an increase in the bandgap by 0.18 eV.

  7. Ab initio density functional theory investigation of crystalline bundles of polygonized single-walled silicon carbide nanotubes.

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-11-19

    By using ab initio density functional theory, the structural characterizations and electronic properties of two large-diameter (13, 13) and (14, 14) armchair silicon carbide nanotube (SiCNT) bundles are investigated. Full structural optimizations show that the cross sections of these large-diameter SiCNTs in the bundles have a nearly hexagonal shape. The effects of inter-tube coupling on the electronic dispersions of large-diameter SiCNT bundles are demonstrated. By comparing the band structures of the triangular lattices of (14, 14) SiCNTs with nearly hexagonal and circular cross sections we found that the polygonization of the tubes in the bundle leads to a further dispersion of the occupied bands and an increase in the bandgap by 0.18 eV.

  8. Effect on Graphite Substrate to Formation of Boron Carbide/Carbon Composite Nanoropes%石墨基底对碳/碳化硼复合纳米绳形成的影响

    Institute of Scientific and Technical Information of China (English)

    马淑芳; 梁建; 赵君芙; 孙晓霞; 许并社

    2009-01-01

    利用邻碳硼烷(C2H12B10)作为反应原料,二茂铁(C10H10Fe)作为催化剂,通过化学气相沉积法在石墨基片上生长出一种新颖的碳化硼纳米绳.用X射线衍射仪分析纳米绳的相结构,用场发射扫描电子显微镜(FESEM)和高分辨透射电子显微镜(HRTEM)观察纳米绳的微观形貌和结构,结果发现纳米绳的中心部分是碳化硼纳米线,在线的表面有非晶碳绳结,故纳米绳为碳/碳化硼复合物.研究了绳状产物的生长机理,表明石墨基片对产物的形成有至关重要的作用.%A type of novel boron carbide nanoropes has been grown on the graphite substrate by chemical vapor deposition method. In this study, o-carborane(C2H12B10) powder was used as a precursor and ferrocene(C10H10Fe) as a catalyst. Phase, microstructures and components of these nanoropes were characterized by X-ray diffractometer (XRD), scan electron microscopy(SEM) and high-resolution transmission electron microscopy(HRTEM) as well as energy dispersive X-ray spectroscopy(EDS). It has been found that the boron carbide nanoropes have such a structure of a single crystal wire in the centre of ropes partially covered with amorphous carbon knots. Growth mechanism of boron carbide nanoropes was discussed. It has demonstrated that the substrate of graphite plays a significant role in the formation of nanoropes.

  9. Tribological and thermal stability study of nanoporous amorphous boron carbide films prepared by pulsed plasma chemical vapor deposition

    Science.gov (United States)

    Liza, Shahira; Ohtake, Naoto; Akasaka, Hiroki; Munoz-Guijosa, Juan M.

    2015-06-01

    In this work, the thermal stability and the oxidation and tribological behavior of nanoporous a-BC:H films are studied and compared with those in conventional diamond-like carbon (DLC) films. a-BC:H films were deposited by pulsed plasma chemical vapor deposition using B(CH3)3 gas as the boron source. A DLC interlayer was used to prevent the a-BC:H film delamination produced by oxidation. Thermal stability of a-BC:H films, with no delamination signs after annealing at 500 °C for 1 h, is better than that of the DLC films, which completely disappeared under the same conditions. Tribological test results indicate that the a-BC:H films, even with lower nanoindentation hardness than the DLC films, show an excellent boundary oil lubricated behavior, with lower friction coefficient and reduce the wear rate of counter materials than those on the DLC film. The good materials properties such as low modulus of elasticity and the formation of micropores from the original nanopores during boundary regimes explain this better performance. Results show that porous a-BC:H films may be an alternative for segmented DLC films in applications where severe tribological conditions and complex shapes exist, so surface patterning is unfeasible.

  10. Study of boron carbide evolution under neutron irradiation; Contribution a l'etude de l'evolution du carbure de bore sous irradiation neutronique

    Energy Technology Data Exchange (ETDEWEB)

    Simeone, D. [CEA/Saclay, Dept. de Mecanique et de Technologie (DMT), 91 - Gif-sur-Yvette (France)]|[Universite Blaise Pascal, Clermont-Ferrand II, (CNRS), 63 - Aubiere (France)

    1999-07-01

    Owing to its high neutron efficiency, boron carbide (B{sub 4}C) is used as a neutron absorber in control rods of nuclear plants. Its behaviour under irradiation has been extensively studied for many years. It now seems clear that brittleness of the material induced by the {sup 10}B(n,{alpha}){sup 7}Li capture reaction is due to penny shaped helium bubbles associated to a high strain field around them. However, no model explains the behaviour of the material under neutron irradiation. In order to build such a model, this work uses different techniques: nuclear microprobe X-ray diffraction profile analysis and Raman and Nuclear Magnetic Resonance Spectroscopy to present an evolution model of B{sub 4}C under neutron irradiation. The use of nuclear reactions produced by a nuclear microprobe such as the {sup 7}Li(p,p'{gamma}){sup 7}Li reaction, allows to measure lithium profile in B{sub 4}C pellets irradiated either in Pressurised Water Reactors or in Fast Breeder Reactors. Examining such profiles enables us to describe the migration of lithium atoms out of B{sub 4}C materials under neutron irradiation. The analysis of X-ray diffraction profiles of irradiated B{sub 4}C samples allows us to quantify the concentrations of helium bubbles as well as the strain fields around such bubbles.Furthermore Raman spectroscopy studies of different B{sub 4}C samples lead us to propose that under neutron irradiation. the CBC linear chain disappears. Such a vanishing of this CBC chain. validated by NMR analysis, may explain the penny shaped of helium bubbles inside irradiated B{sub 4}C. (author)

  11. Reaction Sintering of Boron Carbide/silicon Carbide Green Body and Sintered Body Performance Test and Analysis%反应烧结碳化硼/碳化硅坯体和烧结体的性能测试及分析

    Institute of Scientific and Technical Information of China (English)

    尹茜; 张玉军; 于庆华

    2013-01-01

    With polyvinyl pyrrolidone as boron carbide and carbon black dispersant; Four methylammonium hydroxide as silicon carbide dispersion agent,respectively with acrylamide,N,N'-methylene diacrylamide and a crosslinking agent,the gel casting process for preparation of boron carbide/carbide body,after high temperature sintering,preparation of boron carbide/silicon carbide sintered body specimen.The results show that:the green body bending strength with solid content increases,when the solid content is 55vo1% strength reaches 24.3 MPa.To some extent,fracture toughness can be improved increasing with the content of B4C.When the content of B4C is 10wt%,the maximum fracture toughness of composite is 5.07 MPa · m1/2 The hardness of sintered bodies increases with the increasing of B4C content.The hardness is as high as 94.5 HRA when the content of B4C is 20wt%.%以聚乙烯吡咯烷酮作碳化硼和炭黑分散剂;四甲基氢氧化铵作碳化硅分散剂,分别以丙烯酰胺、N,N'-亚甲基双丙烯酰胺为单体和交联剂,采用凝胶注模工艺制备碳化硼/碳化硅坯体,再经过高温烧结,制备碳化硼/碳化硅烧结体试样.通过对凝胶注模成型反应烧结碳化硼/碳化硅坯体及烧结试样的性能研究表明:坯体的弯曲强度随着固含量的增加而增大,当固含量为55vol%时强度达到24.3 MPa.烧结体的断裂韧性随碳化硼含量的增加先提高后降低.最佳碳化硼含量为10wt%,此时断裂韧性可达到最大值5.07 MPa·m1/2.烧结体的硬度随着碳化硼含量的增加而增加,当碳化硼含量达20wt%时,硬度达到94.5HRA.

  12. Influence of sputtering power on components and mechanical properties of boron carbide films%溅射功率对碳化硼薄膜组分与力学性能的影响

    Institute of Scientific and Technical Information of China (English)

    张玲; 何智兵; 李俊; 许华; 谌家军

    2013-01-01

    Boron carbide films were fabricated by radio frequency magnetron sputtering at different sputtering powers.The structure and components of the boron carbide films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.Using MTS Nano Indenter XP with CSM method,the hardness and modulus of the boron carbide films were analyzed.The results show that B prefers to combining with C to form B-C bond as the RF power increases.When the sputtering power reaches 250 W,the number of B-C bonds is the most,and the atomic concentration ratio between B and C reaches to the maximum of 5.66.Both the hardness and modulus of the boron carbide films increase firstly and then decrease with the sputtering powers increasing.Both of them reach to the maximum of 28.22 GPa and 314.62 GPa,respectively.%采用射频磁控溅射技术,在不同溅射功率条件下制备了碳化硼薄膜,并用X射线光电子能谱(XPS)和傅里叶变换红外吸收光谱(FT-IR)对碳化硼薄膜的组分进行了定量表征,分析了功率变化对碳化硼组分的影响.利用纳米压入仪通过连续刚度法(CSM)对碳化硼薄膜的硬度和模量等力学性能进行了分析.研究表明:随着功率的增大,硼与碳更易结合形成B-C键,在功率增大到250 W时,B-C键明显增多;在250 W时,硼与碳的原子分数比出现了最大值5.66;碳化硼薄膜的硬度与模量都随功率的增大呈现出先增大后减小的趋势,且在250 W时均出现了最大值,分别为28.22 GPa和314.62 GPa.

  13. Van Hove singularities of some icosahedral boron-rich solids by differential reflectivity spectra

    Science.gov (United States)

    Werheit, Helmut

    2015-09-01

    Differential reflectivity spectra of some icosahedral boron rich solids, β-rhombohedral boron, boron carbide and YB66-type crystals, were measured. The derivatives yield the van Hove singularities, which are compared with results obtained by other experimental methods.

  14. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

    Science.gov (United States)

    Sunahori, Fumie X.; Nagarajan, Ramya; Clouthier, Dennis J.

    2015-12-01

    The cold boron carbide free radical (BC X 4Σ-) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B 4Σ--X 4Σ- and E 4Π-X 4Σ- band systems of both 11BC and 10BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B 4Σ- excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E 4Π-X 4Σ- 0-0 and 1-0 bands of 11BC. The E-X 0-0 band of 10BC was found to be severely perturbed. The ground state main electron configuration is …3σ24σ25σ11π22π0 and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  15. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

    Energy Technology Data Exchange (ETDEWEB)

    Sunahori, Fumie X. [Department of Chemistry and Physics, Franklin College, Franklin, Indiana 46131 (United States); Nagarajan, Ramya; Clouthier, Dennis J., E-mail: dclaser@uky.edu [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States)

    2015-12-14

    The cold boron carbide free radical (BC X {sup 4}Σ{sup −}) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B {sup 4}Σ{sup −}–X {sup 4}Σ{sup −} and E {sup 4}Π–X {sup 4}Σ{sup −} band systems of both {sup 11}BC and {sup 10}BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E–X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B {sup 4}Σ{sup −} excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E {sup 4}Π–X {sup 4}Σ{sup −} 0-0 and 1-0 bands of {sup 11}BC. The E–X 0-0 band of {sup 10}BC was found to be severely perturbed. The ground state main electron configuration is …3σ{sup 2}4σ{sup 2}5σ{sup 1}1π{sup 2}2π{sup 0} and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  16. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical.

    Science.gov (United States)

    Sunahori, Fumie X; Nagarajan, Ramya; Clouthier, Dennis J

    2015-12-14

    The cold boron carbide free radical (BC X (4)Σ(-)) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B (4)Σ(-)-X (4)Σ(-) and E (4)Π-X (4)Σ(-) band systems of both (11)BC and (10)BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B (4)Σ(-) excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E (4)Π-X (4)Σ(-) 0-0 and 1-0 bands of (11)BC. The E-X 0-0 band of (10)BC was found to be severely perturbed. The ground state main electron configuration is …3σ(2)4σ(2)5σ(1)1π(2)2π(0) and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  17. Development of Boron-Containing Silicon Carbide Precursor for Ceramic Fibers%纤维用含硼 SiC 陶瓷先驱体的研究进展

    Institute of Scientific and Technical Information of China (English)

    朱旖华; 王浩; 邵长伟

    2013-01-01

    综述了硅硼碳(SiBC)先驱体、硅硼碳氧(SiBCO)先驱体和硅硼碳氮(SiBCN)先驱体等纤维用含硼碳化硅( SiC)陶瓷先驱体的合成方法,分析了不同陶瓷先驱体的组成、结构和性能,比较了几种合成含硼SiC先驱体方法的优缺点,提出了纤维用含硼SiC陶瓷先驱体的合成新思路。%The present paper gives an overview of the synthesis strategies from the polymeric precursors which are used to prepare boron-containing SiC ceramic fibers , such as SiBC , SiBCO and SiBCN .The struc-tures and the properties of the derived fibers are discussed , and the advantage and disadvantage of the different methods for synthesizing boron-containing silicon carbide precursor are compared .A novel route for preparing boron-containing SiC ceramic precursor is proposed .

  18. Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

    Science.gov (United States)

    Steckenreiter, Verena; Walter, Dominic C.; Schmidt, Jan

    2017-03-01

    Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of Rde on I is measured, at high illumination intensities, Rde seems to saturate. We are able to explain the saturation by assuming that Rde increases proportionally with the excess carrier concentration Δ n and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δ n and hence the slope of Δ n (I) decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.

  19. Determination of total carbon in boron carbide by high frequency combustion-infrared absorption method%高频燃烧红外吸收法测定碳化硼中总碳

    Institute of Scientific and Technical Information of China (English)

    郭飞飞; 杨植岗; 王学华; 徐井然; 王朝亮; 黄小峰; 王蓬

    2012-01-01

    采用高频燃烧红外吸收法,建立了测定碳化硼中总碳量的分析方法.对称样量、助熔剂进行了试验.结果表明,当称样量为0.02 g、助熔剂为0.2 g Fe+0.02 g B4C+0.2 g Fe+1.5gW时,测定效果最佳.以CaCO3为校准物质,采用本法对碳化硼样品中的碳进行测定,结果与管式炉燃烧红外吸收法的相对偏差为0.09%,小于JIS R2015-2007标准规定的允许误差0.20%,相对标准偏差为0.37%.%A determination method of total carbon in boron carbide was established by high-frequency combustion infrared absorption method. Sample weight and flux used were discussed. It was found that the optimal experimental conditions were sample weight of 0. 02 g and flux of 0. 02g Fe +0. 02 g B4C + 0. 2g Fe +1. 5 g W. The method was used for determination of carbon in boron carbide with CaCO3 as calibration materials. The relative error of the results with those obtained by tubular furnace combustion-infrared absorption method was 0. 09 % which is smaller than the allowable error 0. 20 % in JIS R2015. The relative standard deviation (RSD) was 0. 37 %.

  20. STUDY ON THE PREPARATION OF BORON CARBIDE POWER BY CARBOTHERMAL REDUCTION METHOD%碳热还原法制备碳化硼粉末的工艺研究

    Institute of Scientific and Technical Information of China (English)

    于国强; 刘维良; 欧阳瑞丰; 李友宝

    2012-01-01

    采用碳热还原法制备了碳化硼粉末样品,讨论了硼碳比、煅烧合成和粉碎过程等工艺参数对其粉末性能的影响。借助XRD分析手段测试了其成分,并用化学方法分析了粉末的总碳含量,用激光粒度分布仪测试了其粒度分布。实验结果表明:以工业用硼酸和炭黑为原料,在1700~1850℃、保温0.5~1h煅烧合成能制得纯度较高的碳化硼粉末。其总碳含量为20.7%,接近理论值。中位径为32.56μm,经球磨粉碎后,其中位径可以达到2.42μm。%The boron carbide power was manufactured by carbothermal reduction method. The parameters which may have great influence to its performance are also discussed. The composition was analyzed by X-ray diffraction (XRD) . The total carbon content was analyzed by chemical method. The particle size distribution was tested by laser particle size analyzer. Experimental results show that when the boric acid and carbon black were selected as starting materials, sintered at 1700-1850℃ for 0.5-1h, high purity boron carbide power can be got. The total carbon content was 20.7%, which is close to the theoretical value. After milling, the median diameter can reach 2.42 μ m from 32.56 μm.

  1. Comparison of the surface morphologies of boron carbide coatings prepared by bouncing agitation and rolling agitation%跳动及滚动激励制备的碳化硼涂层表面形貌的对比

    Institute of Scientific and Technical Information of China (English)

    王自磊; 廖志君; 陶勇; 于小河; 林涛; 伍登学; 卢铁城

    2011-01-01

    Boron carbide(B4C) coatings are deposited on the glass and steel mandrels using two agitation methods, rolling agitation and bouncing agitation, by electron beam evaporation.Various surface morphologies of the coatings are investigated through the scanning electron microscope.It is found that the surface deposited by rolling agitation has fewer cracks and better compactness, and the particles grow better than that deposited by bouncing agitation.From a comparison of two kinds of B4C coatings, one can find that rolling agitation has more advantages than bouncing agitation in fabricating boron carbide coatings.%利用电子束蒸发技术蒸发碳化硼,通过弹跳激励和滚动激励两种方案来随机滚动小球,从而分别在玻璃和钢球心轴上制备了碳化硼涂层.采用扫描电子显微镜对涂层表面形貌进行了分析.同采用弹跳激励制备的涂层相比,在用滚动激励制备的涂层表面不存在裂纹和微粒脱落现象,其微粒生长的更大,相互接合的更致密.经对比证明,在制备碳化硼涂层上,滚动激励装置优于跳动激励装置.

  2. Characterization of Silicon Carbide.

    Science.gov (United States)

    The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

  3. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hemmi, A.; Bernard, C.; Cun, H.; Roth, S.; Klöckner, M.; Kälin, T.; Osterwalder, J.; Greber, T., E-mail: greber@physik.uzh.ch [Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland); Weinl, M.; Gsell, S.; Schreck, M. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)

    2014-03-15

    The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

  4. 铝基碳化硼材料中子屏蔽性能的蒙特卡罗模拟%The Monte Carlo simulation of neutron shielding performance of boron carbide reinforced with aluminum composites

    Institute of Scientific and Technical Information of China (English)

    戴春娟; 刘希琴; 刘子利; 刘伯路

    2013-01-01

    Three groups of neutron shielding experiments were set up to study the shielding performance of B4C/Al composite, using the Monte-Carlo method. We have made the following changes: the content of boron carbide 20%-40%, neutron energy 200 eV-15 keV, material thickness 0.3-2 cm, so that we can draw the conclusions: the content of boron carbide and neutron transmission coefficient show a linear relation, with a big drop; under the same neutron energy, the neutron-shielding qualities of simulated specimens are for better than polyethylene boron carbide at the same content of B4C and water, copper, and concrete at the same thickness; an exponential decline relationship is exhibited by material thickness and neutron transmission coefficient, which change greatly with the increase in unit material thickness; the content of boron affects the thermal neutron transmission coefficient seriously. In the thermal neutron energy region, the change of per unit neutron energy(100 eV) has a big influence on neutron transmission coefficient. In the slow neutron energy region, the influence is small.%  采用蒙特卡罗方法,运用 MCNP4C 程序研究了碳化硼含量20%-40%、中子能量200 eV-15 keV、材料厚度0.3-2 cm 对 B4C/Al 复合材料中子屏蔽性能的影响.结果表明:碳化硼含量与中子透射系数呈一次线性下降关系;同含量的碳化硼, B4C/Al 材料的中子屏蔽效果要大大优于聚乙烯碳化硼材料;在等厚度条件下,模拟试样 B20等的中子屏蔽效果要优于水、铜、混凝土等常规屏蔽材料;材料厚度与中子透射系数呈指数下降关系,且单位厚度的增加对中子透射系数改变很大;含硼量对热中子透射系数影响很大;在热中子能区,中子每单位能量的变化对中子透射系数改变较大;在慢中子能区,中子每单位能量的变化对中子透射系数改变很小.

  5. Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    L.A. Li; S.H. Cheng; H.D. Li; Q. Yu; J.W. Liu; X.Y. Lv

    2010-01-01

    In this paper, we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition. The diamond films consisting of micro-grains (nano-grains) were realized with low (high) boron source flow rate during the growth processes. The transition of micro-grains to nano-grains is speculated to be strongly (weekly) related with the boron (nitrogen) flow rate. The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate. The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples, which are related to the combined phase composition, boron doping level and texture structure. There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

  6. Innovative method for boron extraction from iron ore containing boron

    Science.gov (United States)

    Wang, Guang; Wang, Jing-song; Yu, Xin-yun; Shen, Ying-feng; Zuo, Hai-bin; Xue, Qing-guo

    2016-03-01

    A novel process for boron enrichment and extraction from ludwigite based on iron nugget technology was proposed. The key steps of this novel process, which include boron and iron separation, crystallization of boron-rich slag, and elucidation of the boron extraction behavior of boron-rich slag by acid leaching, were performed at the laboratory. The results indicated that 95.7% of the total boron could be enriched into the slag phase, thereby forming a boron-rich slag during the iron and slag melting separation process. Suanite and kotoite were observed to be the boron-containing crystalline phases, and the boron extraction properties of the boron-rich slag depended on the amounts and grain sizes of these minerals. When the boron-rich slag was slowly cooled to 1100°C, the slag crystallized well and the efficiency of extraction of boron (EEB) of the slag was the highest observed in the present study. The boron extraction property of the slow-cooled boron-rich slag obtained in this study was much better than that of szaibelyite ore under the conditions of 80% of theoretical sulfuric acid amount, leaching time of 30 min, leaching temperature of 40°C, and liquid-to-solid ratio of 8 mL/g.

  7. Modifications of multi-wall carbon nanotubes with B-containing vapor and their effects on the properties of boron carbide matrix nanocomposites.

    Science.gov (United States)

    Herth, S; Miranda, D; Doremus, R H; Siegel, R W

    2008-06-01

    Multi-wall carbon nanotubes were modified by heating them together with elemental boron powder. B4C crystals grew on the surfaces of the nanotubes, and electron diffraction patterns showed an orientation dependence of the surface B4C and the underlying carbon in the nanotubes. There was no reaction of the nanotubes with solid B2O3 alone. Composites of the modified nanotubes in a B4C matrix showed a small increase of density over sintered B4C.

  8. Jaguar Procedures for Detonation Behavior of Explosives Containing Boron

    Science.gov (United States)

    Stiel, L. I.; Baker, E. L.; Capellos, C.

    2009-12-01

    The Jaguar product library was expanded to include boron and boron containing products by analysis of Available Hugoniot and static volumetric data to obtain constants of the Murnaghan relationships for the components. Experimental melting points were also utilized to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX—boron mixtures calculated with these relationships using Jaguar are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that the boron does not react near the detonation front or that boron mixtures exhibit eigenvalue detonation behavior (as shown by some aluminized explosives), with higher detonation velocities at the initial points. Analyses of calorimetric measurements for RDX—boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the detonation properties of the formulation.

  9. Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O

    Science.gov (United States)

    Slack, G. A.; Morgan, K. E.

    2015-09-01

    Electron deficient and non-deficient boron compounds are discussed as potential thermoelectric generator materials. Particular attention is paid to carbon-doped beta-boron, high-carbon boron carbide, and the alpha-boron derivative compound boron suboxide. Stoichiometric B6O shows some promise, and may have a higher ZT than the other two compounds. Carbon saturated beta-boron appears to have a higher ZT than undoped samples. Carbon saturated boron carbide at B12C3 does exist. Its thermoelectric behavior is unknown.

  10. PYROLYTIC CARBIDE DEVELOPMENT PROGRAM

    Science.gov (United States)

    and injector design changes were made to improve the quality of the carbide produced. Niobium carbide and tantalum carbide coated nozzles are described...Additional data for pyrolytic niobium carbide and hafnium carbide is also presented. (Author)

  11. Stereology of carbide phase in modified hypereutectic chromium cast iron

    Directory of Open Access Journals (Sweden)

    J. Suchoń

    2010-04-01

    Full Text Available In paper are presented results of studies of carbide phase stereology modified hypereutectic wear resistance chromium cast iron which contains carbon about 3,5% and chromium about 25%. Three substances were applied to the modification: boron carbide (B4C, ferroniobium (FeNb and mixture of ferroniobium and rare-earth (RE. The measurements of geometrical features of carbides were conducted on microsection taken from castings wich were cooled with various velocities.

  12. Titanium carbide nanocube core induced interfacial growth of crystalline polypyrrole/polyvinyl alcohol lamellar shell for wide-temperature range supercapacitors

    Science.gov (United States)

    Weng, Yu-Ting; Pan, Hsiao-An; Wu, Nae-Lih; Chen, Geroge Zheng

    2015-01-01

    This is the first investigation on electrically conducting polymers-based supercapacitor electrodes over a wide temperature range, from -18 °C to 60 °C. A high-performance supercapacitor electrode material consisting of TiC nanocube core and conformal crystalline polypyrrole (PPy)/poly-vinyl-alcohol (PVA) lamellar shell has been synthesized by heterogeneous nucleation-induced interfacial crystallization. PPy is induced to crystallize on the negatively charged TiC nanocube surfaces via strong interfacial interactions. In this organic-inorganic hybrid nanocomposite, the long chain PVA enables enhanced cycle life due to improved mechanical properties, and the TiC nanocube not only contributes to electron conduction, but also dictates the PPy morphology/crystallinity for maximizing the charging-discharging performance. The crystalline PPy/PAV layer on the TiC nanocube offers unprecedented high capacity (>350 F g-1-PPy at 300 mV s-1 with ΔV = 1.6 V) and cycling stability in a temperature range from -18 °C to 60 °C. The presented hybrid-filler and interfacial crystallization strategies can be applied to the exploration of new-generation high-power conducting polymer-based supercapacitor materials.

  13. Influence of Vanadium and Boron Additions on the Microstructure, Fracture Toughness, and Abrasion Resistance of Martensite-Carbide Composite Cast Steel

    Directory of Open Access Journals (Sweden)

    Waleed Elghazaly

    2016-01-01

    Full Text Available High chromium cast steel alloys are being used extensively in many industrial services where dry or wet abrasion resistance is required. Such steel castings are demanded for cement, stoneware pipes, and earth moving industries. In this research, five steel heats were prepared in 100 kg and one-ton medium frequency induction furnaces and then sand cast in both Y-block and final impact arm spare parts, respectively. Vanadium (0.5–2.5% and boron (120–150 ppm were added to the 18Cr-1.9C-0.5Mo steel heats to examine their effects on the steel microstructure, mechanical properties especially impact, fracture toughness and abrasion resistance. Changes in the phase transformation after heat treatment were examined using inverted, SEM-EDX microscopy; however, the abrasion resistance was measured in dry basis using the real tonnage of crushed and milled stoneware clay to less than 0.1 mm size distribution.

  14. Influence of technology parameter on resistivity of boron carbide composities%工艺因素对碳化硼复合材料电阻率的影响

    Institute of Scientific and Technical Information of China (English)

    孟德川; 王宁会; 李国锋

    2014-01-01

    The influence of technology parameter on resistivity of boron carbide/butyl rubber composites during the process of preparation was introduced.The resistivity dependency of different batches and the process of vulcanization and mixing are analyzed by preseting electrode in the composites.The results showed that:some difference of technology in the manufacturing process,the time and temperature of vulcanization,the change of mixing time and the rotor speed will bring obvious change of the conductive network structure.The change will influence the resistivity and the conductive property of composites.%对碳化硼/丁基橡胶复合材料制备过程中工艺因素对电阻率的影响进行了研究,利用在复合材料中预置电极测量电阻率的方法分析了不同批次、硫化和混炼过程对复合材料电阻率的影响。结果表明复合材料在制作过程中,工艺微小的差异、硫化时间和温度、混炼时间和辊筒速度的变化都会带来复合材料中导电网络结构的明显变化,使得复合材料的电阻率和导电性能有较为明显的改变。

  15. 含碳化硼的吸收和屏蔽中子辐射涂料的研究%Boron Carbide Containing Paint Absorbing and Shielding Neutron Radiation

    Institute of Scientific and Technical Information of China (English)

    黄益平; 冯惠生; 梁璐; 徐姣; 张卫江

    2011-01-01

    对碳化硼(B4C)/环氧树脂涂料合成工艺进行研究,制得一种以793树脂作为固化剂的能屏蔽和吸收中子辐射的涂料.对B4C/环氧树脂涂料的成膜条件及不同含量B4C涂料的硬度、抗冲击性、附着力和柔韧性等物理机械性能进行测试研充结果表明,含有30% B4C的环氧树脂涂料的总体机械性能最佳.在此基础上,考察了不同涂膜厚度下B4C/环氧树脂涂料的防中子辐射的性能,薄膜厚度超过300 μm时,可以有效屏蔽中子射线.%The synthesis technology of boron carbide (B4C)/epoxy resin paint was investigated, and the paint with the ability of absorbing and shielding the neutron radiation, solidified by 793 resin, was obtained. The film-forming conditions of B4C / epoxy resin paint were treated; meanwhile, the relationship between the different contents of B4C in the paint and hardness, impact resistance, adhesion, flexibility and other physical testing of mechanical properties was studied. The conclusion was obtained that the overall machinery of B4C/epoxy paint has better performance with 30% B4C. Furthermore, The anti-neutron radiation performance of B4C/epoxy paint with different film thicknesses was also examined. Results show that effective neutron radiation shielding can be achieved when the film thickness exceeds 300 nm.

  16. Boron-Based (Nano-Materials: Fundamentals and Applications

    Directory of Open Access Journals (Sweden)

    Umit B. Demirci

    2016-09-01

    Full Text Available The boron (Z = 5 element is unique. Boron-based (nano-materials are equally unique. Accordingly, the present special issue is dedicated to crystalline boron-based (nano-materials and gathers a series of nine review and research articles dealing with different boron-based compounds. Boranes, borohydrides, polyhedral boranes and carboranes, boronate anions/ligands, boron nitride (hexagonal structure, and elemental boron are considered. Importantly, large sections are dedicated to fundamentals, with a special focus on crystal structures. The application potentials are widely discussed on the basis of the materials’ physical and chemical properties. It stands out that crystalline boron-based (nano-materials have many technological opportunities in fields such as energy storage, gas sorption (depollution, medicine, and optical and electronic devices. The present special issue is further evidence of the wealth of boron science, especially in terms of crystalline (nano-materials.

  17. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  18. Hydrothermal synthesis of xonotlite from carbide slag

    Institute of Scientific and Technical Information of China (English)

    Jianxin Cao; Fei Liu; Qian Lin; Yu Zhang

    2008-01-01

    Carbide slag was used as the calcareous materials for the first time to prepare xonotlite via dynamic hydrothermal synthesis.The effects of influential factors including different calcination temperatures,pretreatment methods of the carbide slag and process param-eters of hydrothermal synthesis on the microstructure and morphology of xonotlite were explored using XRD and SEM techniques.The results indicate that the carbide slag after proper calcination could be used to prepare pure xonotlite;and different calcination tern-peratures have little effect on the crystallinity of synthesized xonotlitc,but have great impact on the morphology of secondary particles.The different pretreatment methods of the carbide slag pose great impact on the crystallinity and morphology of secondary particles of xonotlite.Xonotlite was also synthesized from pure CaO under the salne experimental conditions as that prepared from calcined carbide slag for comparison.Little amount of impurities in carbide slag has no effect on the mechanism of hydrothermal synthesizing xonotlite from carbide slag.

  19. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    Science.gov (United States)

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  20. Development of Boron Carbide Pellet for CEFR

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Many shielding subassemblies which contain B4C absorber material are arranged outside the reflecting subassemblies in China experimental fast reactor (CEFR). A hot press process has been adopted for preparing B4C pellet. The B4C powder is synthesized by boric acid and carbon black. The B4C pellet is fabricated by cold press, hot press and sintering, precision working, cleaning surface and drying. Among those processes, hot press process is very important because of its

  1. Pyrotechnic Smoke Compositions Containing Boron Carbide

    Science.gov (United States)

    2012-06-10

    tubes were made of kraft fiberboard and had an inner diameter of 3.12 cm. Stainless steel cans, cylindrical and closed on one end, had a 1.75 cm inner...spectrometer was chosen so that the wavelength with the highest signal was just below the saturation level of the system. This spectrum served as the baseline...as the Yershov mixture). 1 Figure 2. Vapor pressure of KCl as a function of temperature. Hand-held signal (HHS) tubes, made of kraft

  2. Assessment of Boron Steels for Army Use

    Science.gov (United States)

    1978-11-01

    transform the microstructure from austenite to the lower tempera- ture transformation product martensite (lower bainite may also be satisfactory for... bainite , carbides, or pearlite. Thus, as long as low tem- perature transformation products are desired (martensite and lower bainite ), boron 13

  3. Effect of Boron-Doped Diamond Interlayer on Cutting Performance of Diamond Coated Micro Drills for Graphite Machining

    Directory of Open Access Journals (Sweden)

    Zhiming Zhang

    2013-07-01

    Full Text Available Thin boron doped diamond (BDD film is deposited from trimethyl borate/acetone/hydrogen mixture on Co-cemented tungsten carbide (WC-Co micro drills by using the hot filament chemical vapor deposition (HFCVD technique. The boron peak on Raman spectrum confirms the boron incorporation in diamond film. This film is used as an interlayer for subsequent CVD of micro-crystalline diamond (MCD film. The Rockwell indentation test shows that boron doping could effectively improve the adhesive strength on substrate of as deposited thin diamond films. Dry drilling of graphite is chosen to check the multilayer (BDD + MCD film performance. For the sake of comparison, machining tests are also carried out under identical conditions using BDD and MCD coated micro drills with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results show that the multilayer (BDD + MCD coated micro drill exhibits the longest tool life. Therefore, thin BDD interlayer is proved to be a new viable alternative and a suitable option for adherent diamond coatings on micro cutting tools.

  4. Boron deposition from fused salts. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Smith, M.L.

    1980-08-01

    A partial evaluation of the feasibility of a process to electrodeposit pure coherent coatings of elemental boron from molten fluorides has been performed. The deposit produced was powdery and acicular, unless the fluoride melt was purified to have very low oxygen concentration. When the oxygen activity was reduced in the melt by addition of crystalline elemental boron, dense, amorphous boron deposit was produced. The boron deposits produced had cracks but were otherwise pure and dense and ranged up to 0.35 mm thick. Information derived during this project suggests that similar deposits might be obtained crack-free up to 1.00 mm thick by process modifications and improvements.

  5. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  6. WAYS TO INCREASE THE OPERATIONAL CHARACTERISTICS OF CAST PRODUCTS WITH BORON

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2012-01-01

    Full Text Available It is shown that for improvement of physical and chemical properties of cast products, exploited inconditions of intensive contact with the abrasive environment, boron carbide of great interest.

  7. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  8. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  9. Are there bipolarons in icosahedral boron-rich solids?

    Science.gov (United States)

    Werheit, H

    2007-05-01

    The charge transport of boron carbide, often incorrectly denoted as B(4)C, has been controversially discussed. It is shown that the bipolaron hypothesis is not compatible with numerous experimental results. In particular, the determined real microstructure of boron carbide and its related electronic properties disprove several assumptions, which are fundamental to the bipolaron hypothesis. In contrast, the actual energy band scheme derived mainly from optical investigations is confirmed by careful evaluation of the high-temperature electrical conductivity, and allows a consistent description at most of the experimental results.

  10. Growth of diamond layers on diamond and cBN seeds using iron carbide under high pressure and high temperature

    CERN Document Server

    Li Xun; Hao Zhao Yin; LiuPeng; Li Musen; Zou Guang Tian; Cheng Shu Yu; Cheng Kai Jia

    2002-01-01

    Iron carbide without any graphite was studied under high pressure and high temperature (HPHT); diamond layers were obtained both on diamond and on cubic boron nitride seeds at 5.5 GPa and 1700-1750 K. The results showed that transition-metal carbide was the main intermediate in the course of the transformation from graphite to diamond under HPHT.

  11. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  12. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    Science.gov (United States)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  13. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  14. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  15. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  16. Silicon Carbide Shapes.

    Science.gov (United States)

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  17. Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

    Science.gov (United States)

    Gaballa, Osama Gaballa Bahig

    Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering

  18. Phase Analysis of Cemented Carbide WC—Co Boronised with Yttrium

    Institute of Scientific and Technical Information of China (English)

    刘寿荣; 郝建民; 等

    2002-01-01

    Phase analysis for the coated surface with B4Cand Y2O3of cemented carbide WC-20Co in vacuum-heating was carried out by high-temperature X-ray diffraction from ambient temperature to 1300℃,The results show that,the high-concentration active boron atoms are released from the boron-supply agent B4Clocated on the alloy surface and diffused into the γphase,leading to forming the three-element boron-bearing compound W2Co21B6beside forming boron-bearins compounds on the blank surface.By contrast with boronising only,the element yttrium in boronization broadens the boronising temperature range during vacuum-sistering,catalyzes the decarbonisation decomposition of B4C and promotes diffusion of active boron atoms into the bulk of WC-Co.

  19. Phase Analysis of Cemented Carbide WC-Co Boronised with Yttrium

    Institute of Scientific and Technical Information of China (English)

    刘寿荣; 郝建民; 褚连青; 宋俊亭

    2002-01-01

    Phase analysis for the coated surface with B4C and Y2O3 of cemented carbid e WC-20Co in vacuum-heating was carried out by high-temperature X-ray diffra ction from ambient temperature to 1300 ℃. The results show that, the high-conc entration active boron atoms are released from the boron-supply agent B4C loc ated on the alloy surface and diffused into the γ-phase, leading to forming th e three-element boron-bearing compound W2Co21B6 beside forming boron -bearing compounds on the blank surface. By contrast with boronising only, the element yttrium in boronization broadens the boronising temperature range during vacuum-sintering, catalyzes the decarbonisation decomposition of B4C and prom otes diffusion of active boron atoms into the bulk of WC-Co.

  20. Laser Boronizing of Stainless Steel with Direct Diode Laser

    Science.gov (United States)

    Kusuhara, Takayoshi; Morimoto, Junji; Abe, Nobuyuki; Tsukamoto, Masahiro

    Boronizing is a thermo-chemical surface treatment in which boron atoms are diffused into the surface of a work piece to form borides with the base material. When applied to the metallic materials, boronizing provides wear and abrasion resistance comparable to sintered carbides. However conventional boronizing is carried out at temperatures ranging from 800°C to 1050°C and takes from one to several hours. The structure and properties of the base material is influenced considerably by the high temperature and long treatment time. In order to avoid these drawbacks of conventional boronizing, laser-assisted boronizing is investigated which activates the conventional boronizing material and the work piece with a high density laser power. In this study, effect of laser characteristics was examined on the laser boronizing of stainless steel. After laser boronizing, the microstructure of the boride layer was analyzed with an optical microscope, electron probe micro analyser(EPMA) and X-ray diffractometer (XRD). The mechanical properties of borided layer were evaluated using Vickers hardness tester and sand erosion tester. Results showed that the boride layer was composed of NiB, CrB, FeB and Fe2B, and get wear resistance.

  1. SILICON CARBIDE DATA SHEETS

    Science.gov (United States)

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  2. The possibility of the boronizing process on the pressed samples of iron powder

    Directory of Open Access Journals (Sweden)

    Požega Emina D.

    2009-01-01

    Full Text Available The paper presents results of the experimental investigation of the boronizing process on nonsintering iron powder samples (NC100.24, Höganäs, Sweden. Experiments are planned within the limits of applicability of simultaneous sintering at chemical-thermal treatment process (boronizing. The simlex plan of 15 experimental points was used for the experiment, while a polynomial function of fourth degree was employed in the modeling of a mixture composition based on the volume changes, porosity and the depth layer changes. Boronizing was carried out in mixture with born carbide by addition of ammonium bifluoride, ammonium chloride and boron potassium fluoride as activators, by proportion definited plan.

  3. Ion implantation phenomena in 4H-silicon carbide

    CERN Document Server

    Phelps, Gordon James

    2003-01-01

    Silicon Carbide is a promising wide band gap semiconductor with many new properties yet to be established and investigated. Ion implantation is the dominant method of incorporating dopant materials into the Silicon Carbide crystalline structure for electronic device fabrication. The implantation process of dopants into Silicon Carbide, both theoretical and practical, is described in this Thesis. Additional fabrication process steps, such as annealing, and their implications are also described. To gain further insight into the process of ion implantation into Silicon Carbide, the detailed design of a special test die is discussed. The aim of the special test die was to obtain general information such as implanted dopant sheet resistivity and to test a novel bipolar transistor design. The fabrication steps involved for the special test die are discussed in detail. The results from the special test die take the form of specific electrical measurements, together with detailed visual observations provided by a sca...

  4. Thermal Transport in Refractory Carbides.

    Science.gov (United States)

    Thermal energy transport mechanisms in titanium carbide and zirconium carbide have been studied. Several compositions of vanadium carbide alloyed...with titanium carbide were used. The electronic component of the thermal conductivity exceeded the values computed using the classical value for L in

  5. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

    Science.gov (United States)

    Mannix, Andrew J.; Zhou, Xiang-Feng; Kiraly, Brian; Wood, Joshua D.; Alducin, Diego; Myers, Benjamin D.; Liu, Xiaolong; Fisher, Brandon L.; Santiago, Ulises; Guest, Jeffrey R.; Yacaman, Miguel Jose; Ponce, Arturo; Oganov, Artem R.; Hersam, Mark C.; Guisinger, Nathan P.

    2016-01-01

    At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes.Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal. PMID:26680195

  6. Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Krivezhenko, Dina S., E-mail: dinylkaa@yandex.ru; Drobyaz, Ekaterina A., E-mail: ekaterina.drobyaz@yandex.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru; Chuchkova, Lyubov V., E-mail: twitty-kun@mail.ru [Novosibirsk State Technical University, Novosibirsk, 630073 (Russian Federation)

    2015-10-27

    An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

  7. Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

    Science.gov (United States)

    Krivezhenko, Dina S.; Drobyaz, Ekaterina A.; Bataev, Ivan A.; Chuchkova, Lyubov V.

    2015-10-01

    An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

  8. 碳化钨纳米晶薄膜电极的制备及其对甲醇电氧化性能%Preparation of nano-crystalline tungsten carbide thin film electrode and its electrocatalytic activity for oxidation of methanol

    Institute of Scientific and Technical Information of China (English)

    郑华均; 马淳安; 黄建国

    2005-01-01

    Nano-crystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapour deposition in H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized with X-ray diffraction(XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results showed that the film prepared at CH4/WF6 concentration ratio of 20, working pressure of 100Pa and temperature of 800℃ were composed of sphere particles with a diameter of 20-35nm Electrochemical investigations show that the electrochemical surface area of electrode of the film was large.The electrode of the film exhibited higher electro-catalytic activity in the reaction of methanol oxidation, and its catalytic properties were similar to those of Pt or Pt group catalysts. The constant current of the film catalyst was 123.6mA·cm-2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 mol·L-1 and 2.0 mol·L-1 respectively at 70℃, and its constant potential was only 0. 306V(vs. SCE).

  9. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Science.gov (United States)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  10. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Ronan Léal

    2017-02-01

    Full Text Available Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE, high resolution transmission electron microscopy (HR-TEM and X-ray diffraction (XRD. The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS and secondary ion mass spectrometry (SIMS measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3. Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  11. Synthesis and characterization of ammonium phosphate fertilizers with boron

    Directory of Open Access Journals (Sweden)

    ANGELA MAGDA

    2010-07-01

    Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

  12. Abrasive wear behavior of heat-treated ABC-silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da; Ritchie, Robert O.; De Jonghe, Lutgard C.

    2002-06-17

    Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

  13. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  14. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  15. Reactivity of carbides in synthesis of MgB 2 bulks

    Science.gov (United States)

    Yamamoto, Akiyasu; Shimoyama, Jun-ichi; Ueda, Shinya; Horii, Shigeru; Kishio, Kohji

    2006-10-01

    The reactivity of various carbides (B4C, Al4C3, SiC, TiC, ZrC, NbC, Mo2C, HfC and WC) with magnesium and boron in synthesis of MgB2 was systematically studied. Decreases in the a-axis length and transition temperature were observed in all the carbide doped MgB2 bulks, reflecting a certain amount of carbon substituted for boron site in MgB2. The reactivity of each carbide estimated by the carbon content in MgB2 was found to be different depending on the chemical stability. Our results suggest that carbon content in MgB2 lattice can be controlled to its optimal doping level by adjusting synthesis conditions and selection of doping reagents.

  16. X-ray diffraction study of boron produced by pyrolysis of boron tribromide

    Science.gov (United States)

    Rosenberg, David

    formation are not fully understood or agreed upon in the literature. In this research, the method of pyrolysis of boron tribromide (hydrogen reduction of boron tribromide) was used to deposit boron on a tantalum filament. The goal was to refine this method, or potentially use it in combination with a second method (amorphous boron crystallization), to the point where it is possible to grow large, high purity alpha-rhombohedral boron crystals with consistency. A pyrolysis apparatus was designed and built, and a number of trials were run to determine the conditions (reaction temperature, etc.) necessary for alpha-rhombohedral boron production. This work was focused on the x-ray diffraction analysis of the boron deposits; x-ray diffraction was performed on a number of samples to determine the types of boron (and other compounds) formed in each trial and to guide the choices of test conditions for subsequent trials. It was found that at low reaction temperatures (in the range of around 830-950 °C), amorphous boron was the primary form of boron produced. Reaction temperatures in the range of around 950-1000 °C yielded various combinations of crystalline boron and amorphous boron. In the first trial performed at a temperature of 950 °C, a mix of amorphous boron and alpha-rhombohedral boron was formed. Using a scanning electron microscope, it was possible to see small alpha-rhombohedral boron crystals (on the order of ~1 micron in size) embedded in the surface of the deposit. In subsequent trials carried out at reaction temperatures in the range of 950 °C -- 1000 °C, it was found that various combinations of alpha-rhombohedral boron, beta-rhombohedral boron, and amorphous boron were produced; the results tended to be unpredictable (alpha-rhombohedral boron was not produced in every trial), and the factors leading to success/failure were difficult to pinpoint. These results illustrate how sensitive of a process producing alpha-rhombohedral boron can be, and indicate that

  17. Hollow boron nitride nanospheres as boron reservoir for prostate cancer treatment

    Science.gov (United States)

    Li, Xia; Wang, Xiupeng; Zhang, Jun; Hanagata, Nobutaka; Wang, Xuebin; Weng, Qunhong; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2017-01-01

    High global incidence of prostate cancer has led to a focus on prevention and treatment strategies to reduce the impact of this disease in public health. Boron compounds are increasingly recognized as preventative and chemotherapeutic agents. However, systemic administration of soluble boron compounds is hampered by their short half-life and low effectiveness. Here we report on hollow boron nitride (BN) spheres with controlled crystallinity and boron release that decrease cell viability and increase prostate cancer cell apoptosis. In vivo experiments on subcutaneous tumour mouse models treated with BN spheres demonstrated significant suppression of tumour growth. An orthotopic tumour growth model was also utilized and further confirmed the in vivo anti-cancer efficacy of BN spheres. Moreover, the administration of hollow BN spheres with paclitaxel leads to synergetic effects in the suppression of tumour growth. The work demonstrates that hollow BN spheres may function as a new agent for prostate cancer treatment.

  18. Separate vaporisation of boric acid and inorganic boron from tungsten sample cuvette-tungsten boat furnace followed by the detection of boron species by inductively coupled plasma mass spectrometry and atomic emission spectrometry (ICP-MS and ICP-AES).

    Science.gov (United States)

    Kataoka, Hiroko; Okamoto, Yasuaki; Tsukahara, Satoshi; Fujiwara, Terufumi; Ito, Kazuaki

    2008-03-10

    Utilising extremely different vaporisation properties of boron compounds, the determination procedures of volatile boric acid and total boron using tungsten boat furnace (TBF) ICP-MS and TBF-ICP-AES have been investigated. For the determination of volatile boric acid by TBF-ICP-MS, tetramethylammonium hydroxide (TMAH, Me(4)NOH) was used as a chemical modifier to retain it during drying and ashing stages. As for the total boron, not only non-volatile inorganic boron such as boron nitride (BN), boron carbide (B(4)C), etc. but also boric acid (B(OH)(3)) was decomposed by a furnace-fusion digestion with NaOH to produce sodium salt of boron, a suitable species for the electrothermal vaporisation (ETV) procedure. The proposed method was applied to the analysis of various standard reference materials. The analytical results for various biological and steel samples are described.

  19. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.L. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Tang, Y.; Yang, L.; Zhang, C. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Hu, Y.; Cui, X. [Canadian Light Source Inc., 101 Perimeter Road, Saskatoon, SK S7N 0X4 (Canada)

    2015-08-31

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B{sub 4}C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B{sub 4}C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp{sup 3} bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp{sup 3} bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp{sup 3} bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films.

  20. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  1. Methods of forming boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  2. Titanium Carbide: Nanotechnology, Properties, Application

    OpenAIRE

    Galevsky, G. V.; Rudneva, V. V.; Garbuzova, A. K.; Valuev, Denis Viktorovich

    2015-01-01

    The paper develops scientific and technological bases for fabrication of titanium carbide which is a nanocomponent of composite materials. The authors determine optimum technology specifications and the main titanium carbide properties: fineness of titaniferous raw materials, carbide-forming agent quantity, set temperature of plasma flow, tempering temperature, titanium carbide yield, productivity, specific surface, size and shape of particles. The paper includes equations to describe how the...

  3. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure.

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-11-20

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure-temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure-room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear.

  4. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I.; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-01-01

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure–temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure–room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear. PMID:23129624

  5. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  6. Tuning field emission properties of boron nanocones with catalyst concentration

    Institute of Scientific and Technical Information of China (English)

    Li Chen; Tian Yuan; Wang Deng-Ke; Shi Xue-Zhao; Hui Chao; Shen Cheng-Min; Gao Hong-Jun

    2011-01-01

    Single crystalline boron nanocones are prepared by using a simple spin spread method in which Fe3O4 nanoparticles are pre-manipulated on Si(111) to form catalyst patterns of different densities. The density of boron nanocones can be tuned by changing the concentration of catalyst nanoparticles. High-resolution transmission electron microscopy analysis shows that the boron nanocone has a β-tetragonal structure with good crystallization. The field emission behaviour is optimal when the spacing distance is close to the nanocone length, which indicates that this simple spin spread method has great potential applications in electron emission nanodevices.

  7. Degree of crystallinity and strain in B{sub 4}C and SiC thin films as a function of processing conditions

    Energy Technology Data Exchange (ETDEWEB)

    Hershberger, J.; Yalisove, S.M.; Bilello, J.C. [Univ. of Michigan, Ann Arbor, MI (United States); Rek, Z.U. [Stanford Univ., CA (United States). Stanford Synchrotron Radiation Lab.; Kustas, F. [Technology Assessment and Transfer, Annapolis, MD (United States)

    1998-12-31

    Amorphous and crystalline content in sputtered B{sub 4}C and SiC thin films has been analyzed by synchrotron grazing incidence x-ray scattering (GIXS). GIXS provided quantitative information on the average structure while TEM was used to find inhomogeneities such as small volume fraction phases. GIXS results were compared to simulations to determine average particle size or bond length for crystalline or amorphous phases respectively. In this work, the authors compared results from films deposited with, and without, an RF bias applied to the substrate during deposition. Results indicated that SiC can be described as strained polycrystalline material with particle size of approximately 13 {angstrom} for biased samples and 9 {angstrom} for unbiased samples. Boron carbide deposited without bias was completely crystalline with a particle size of approximately 30 {angstrom}, while the data suggested that B{sub 4}C deposited with bias is amorphous. The scattering from the biased materials was fourier transformed to yield radial distribution functions (RDF). This provided nearest neighbor distances, and it was demonstrated that the technique can be used to determine full three-dimensional strain tensors in amorphous thin films.

  8. Surface roughness analysis after machining of direct laser deposited tungsten carbide

    Science.gov (United States)

    Wojciechowski, S.; Twardowski, P.; Chwalczuk, T.

    2014-03-01

    In this paper, an experimental surface roughness analysis in machining of tungsten carbide is presented. The tungsten carbide was received using direct laser deposition technology (DLD). Experiments carried out included milling of tungsten carbide samples using monolithic torus cubic boron nitride (CBN) tool and grinding with the diamond cup wheel. The effect of machining method on the generated surface topography was analysed. The 3D surface topographies were measured using optical surface profiler. The research revealed, that surface roughness generated after the machining of tungsten carbide is affected by feed per tooth (fz) value related to kinematic-geometric projection only in a minor extent. The main factor affecting machined surface roughness is the occurrence of micro grooves and protuberances on the machined surface, as well as other phenomena connected, inter alia, with the mechanism for material removal.

  9. Titanium Carbide: Nanotechnology, Properties, Application

    Science.gov (United States)

    Galevsky, G. V.; Rudneva, V. V.; Garbuzova, A. K.; Valuev, D. V.

    2015-09-01

    The paper develops scientific and technological bases for fabrication of titanium carbide which is a nanocomponent of composite materials. The authors determine optimum technology specifications and the main titanium carbide properties: fineness of titaniferous raw materials, carbide-forming agent quantity, set temperature of plasma flow, tempering temperature, titanium carbide yield, productivity, specific surface, size and shape of particles. The paper includes equations to describe how the major specifications of the fabrication technique influence the content of titanium carbide and free carbon in the end product.

  10. Silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  11. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Elena; Camean, Ignacio; Garcia, Roberto [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Garcia, Ana B., E-mail: anabgs@incar.csic.es [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain)

    2011-05-30

    Highlights: > Because of the catalytic effect of boron, graphite-like foams were prepared. > The presence of substitutional boron in carbon foams improves their anodic performance. > The graphitized boron-doped foams provide reversible capacities of 310 mA h g{sup -1}. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B{sub 4}C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to {approx}310 mA h g{sup -1} were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  12. Sintering behavior of alumina-niobium carbide ceramics from polymer-filler mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Acchar, W.; Wolff, D.M.B. [Programa de Doutorado em Engenharia e Ciencia dos Materiais-UFRN, Univ. Federal do Rio Grande do Norte, Natal, RN (Brazil); S. Dantas, A.C. da [Programa de Pos-graduacao em Engenharia Mecanica-UFRN, Univ. Federal do Rio Grande do Norte - Natal, RN (Brazil)

    2003-07-01

    Studies have been developed in the literature to obtain alternative ceramic cutting tools with better properties as tungsten carbide and silicon nitride. Results have showed that the addition of titanium carbide, tungsten carbide or niobium carbide has improved the wear resistance and hardness of alumina. This work presents a study about preparation and characterization of an alumina reinforced with niobium carbide. The composite material is produced using polymer-filler mixtures. Samples with 60 wt.% polysiloxane and a mixture of 40 wt.% of niobium and alumina powder were mixed, uniaxially pressed at 200 C and sintered in flowing argon at 1200 C, 1400 C and 1600 C. The composite materials were characterized by X-ray diffraction (XRD), density measurements, fracture strength and microstructural analysis. The 60 wt% polymer+40 wt% Nb showed the presence of new crystalline phases such as NbC, Nb{sub 5}Si{sub 3} and Nb{sub 3}Si. (orig.)

  13. Composition Comprising Silicon Carbide

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  14. The use of amorphous boron powder enhances mechanical alloying in soft magnetic FeNbB alloy: A magnetic study

    Energy Technology Data Exchange (ETDEWEB)

    Ipus, J. J.; Blazquez, J. S.; Franco, V.; Conde, A. [Dpto. Fisica de la Materia Condensada, ICMSE-CSIC, Universidad de Sevilla, P.O. Box 1065, 41080 Sevilla (Spain)

    2013-05-07

    Saturation magnetization and magnetic anisotropy have been studied during mechanical alloying of Fe{sub 75}Nb{sub 10}B{sub 15} alloys prepared using crystalline and commercial amorphous boron. The evolution of saturation magnetization indicates a more efficient dissolution of boron into the matrix using amorphous boron, particularly for short milling times. The magnetization of the crystalline phase increases as boron is incorporated into this phase. Two milling time regimes can be used to describe the evolution of magnetic anisotropy: a first regime governed by microstrains and a second one mainly governed by crystal size and amorphous fraction.

  15. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  16. Development of Cutting Tool Through Superplastic Boronizing of Duplex Stainless Steel

    Science.gov (United States)

    Jauhari, Iswadi; Harun, Sunita; Jamlus, Siti Aida; Sabri, Mohd Faizul Mohd

    2017-03-01

    In this study, a cutting tool is developed from duplex stainless steel (DSS) using the superplastic boronizing technique. The feasibility of the development process is studied, and the cutting performances of the cutting tool are evaluated and compared with commercially available carbide and high-speed steel (HSS) tools. The superplastically boronized (SPB) cutting tool yielded a dense boronized layer of 50.5 µm with a surface hardness of 3956 HV. A coefficient of friction value of 0.62 is obtained, which is lower than 1.02 and 0.8 of the carbide and HSS tools. When tested on an aluminum 6061 surface under dry condition, the SPB cutting tool is also able to produce turning finishing below 0.4 µm, beyond the travel distance of 3000 m, which is comparable to the carbide tool, but produces much better results than HSS tool. Through superplastic boronizing of DSS, it is possible to produce a high-quality metal-based cutting tool that is comparable to the conventional carbide tool.

  17. Development of Cutting Tool Through Superplastic Boronizing of Duplex Stainless Steel

    Science.gov (United States)

    Jauhari, Iswadi; Harun, Sunita; Jamlus, Siti Aida; Sabri, Mohd Faizul Mohd

    2017-01-01

    In this study, a cutting tool is developed from duplex stainless steel (DSS) using the superplastic boronizing technique. The feasibility of the development process is studied, and the cutting performances of the cutting tool are evaluated and compared with commercially available carbide and high-speed steel (HSS) tools. The superplastically boronized (SPB) cutting tool yielded a dense boronized layer of 50.5 µm with a surface hardness of 3956 HV. A coefficient of friction value of 0.62 is obtained, which is lower than 1.02 and 0.8 of the carbide and HSS tools. When tested on an aluminum 6061 surface under dry condition, the SPB cutting tool is also able to produce turning finishing below 0.4 µm, beyond the travel distance of 3000 m, which is comparable to the carbide tool, but produces much better results than HSS tool. Through superplastic boronizing of DSS, it is possible to produce a high-quality metal-based cutting tool that is comparable to the conventional carbide tool.

  18. RESEARCH OF INFLUENCE OF ALLOYING BY BORON ON PROPERTIES THE IRON-CARBON ALLOYS

    Directory of Open Access Journals (Sweden)

    K. V. Kobyakov

    2014-01-01

    Full Text Available It is shown that for improvement of physical-mechanical properties of the cast products which have hard usage, the boron carbide, which can be used at carrying out process of thermo-chemical treatment of cast products of iron-carbon alloy, is of great interest.

  19. Lattice vibrations of icosahedral boron-rich solids

    Energy Technology Data Exchange (ETDEWEB)

    Beckel, C.L.; Yousaf, M. (The University of New Mexico, Albuquerque, New Mexico 87131 (United States))

    1991-07-01

    The rhombohedral lattices for {alpha}-boron, boron arsenide, and boron phosphide are each of D{sub 3d} symmetry and have bases that include B{sub 12} icosahedra. Boron carbide with B{sub 4}C stoichiometry has near-D{sub 3d} symmetry and is almost certainly composed of B{sub 11}C icosahedra and C-B-C chains. Comparable classical force field models are applied to each of these crystals to correlate q=0 phonon structure with experimental Raman and IR spectra. We here describe our methods and contrast interaction strengths for different materials. Vibrations are correlated in the different crystals through normal mode eigenvector expansions. Acoustic wave velocities from Brillouin zone dispersion curves in two distinct symmetry-axis directions are presented and contrasted for {alpha}-boron and B{sub 12}As{sub 2}. The origin of lines with anomalous polarization and width in {alpha}-boron, B{sub 12}As{sub 2}, and B{sub 12}P{sub 2} is considered.

  20. Influence of structure defects on optical and electronic properties of icosahedral boron rich solids

    CERN Document Server

    Schmechel, R

    1999-01-01

    doped beta-rhombohedral boron by Kramers-Kronig-Analysis gives information on the main transport processes. Beside hopping conduction of localized electrons, band conduction of delocalized electrons were found. While holes in the valence band are the delocalized charge carriers in boron carbide, in vanadium doped beta-rhombohedral boron delocalized electrons in an extrinsic impurity band are suggested. Boron and boron rich solids are known to have a high concentration on intrinsic structural imperfections. From known structure data of real crystals and known band structure calculations of perfect ideal crystals a correlation between intrinsic structure defect concentration and electron deficit in the valence band is concluded. This correlation forms the basis for the following theses: 1. The electron deficit in the valence band of a perfect crystal is the driving force for the intrinsic structure defects in a real crystal. 2. The small electron deficit becomes compensated by the structure defects - this expla...

  1. Thermal Expansion Measurements on Boron Carbide for Fast Breeder Reactor

    Institute of Scientific and Technical Information of China (English)

    1995-01-01

    1.9ThermalExpansionMeasurementsonBoronCarbideforFastBreederReactorZhangLili;HuangYingB_4Cisneutronabsorbermaterialforcontrolr...

  2. Development of boron carbide-copper cermets. Status report

    Energy Technology Data Exchange (ETDEWEB)

    1979-09-01

    The status of a program to develop a B/sub 4/C-Cu cermet for Breeder Reactor spent-fuel shipping cask neutron shields is presented. It is shown that inspectable 6 to 7 cm thick 60 to 70 volume percent B/sub 4/C cermets can be fabricated using hot isostatic powder processing procedures. An alternative manufacturing method, rheocasting, also appears to be a promising, perhaps more cost-effective method for producing these cermets. Recommendations for further development of these manufacturing processes are given.

  3. A metallic superhard boron carbide: first-principles calculations.

    Science.gov (United States)

    Ma, Mengdong; Yang, Bingchao; Li, Zihe; Hu, Meng; Wang, Qianqian; Cui, Lin; Yu, Dongli; He, Julong

    2015-04-21

    A monoclinic BC3 phase (denoted M-BC3) has been predicted using first principles calculations. The M-BC3 structure is formed by alternately stacking sequences of metallic BC-layers and insulating C atom layers, thus, the structure exhibits two-dimensional conductivity. Its stability has been confirmed by our calculations of the total energy, elastic constants, and phonon frequencies. The pressure of phase transition from graphite-like BC3 to M-BC3 is calculated to be 9.3 GPa, and the theoretical Vickers hardness of M-BC3 is 43.8 GPa, this value indicates that the compound is a potentially superhard material. By comparing Raman spectral calculations of M-BC3 and previously proposed structures with the experimental data, we speculate that the experimentally synthesized BC3 crystal may simultaneously contain M-BC3 and Pmma-b phases.

  4. New approach to the synthesis of nanocrystalline boron carbide.

    Science.gov (United States)

    Herth, Simone; Joost, William J; Doremus, Robert H; Siegel, Richard W

    2006-04-01

    The use of nanoparticles in ceramic matrix composites provides lower sintering temperatures and higher densities at a given temperature than common coarse-grained materials. Nanocrystalline B4C was synthesized by an inexpensive carbothermal reduction method using carbon black and B2O3 as precursor. Full conversion was achieved at 1623 K for annealing times of 480 minutes or with a large excess of B2O3 and oxidation of the remaining carbon after 30 minutes of annealing. The average particle size of the synthesized B4C powder was 260 nm, which was reduced to 70 nm after separation of the small particle fraction from the larger particles by sedimentation. A mixture of the as-prepared powder and commercial coarse-grained B4C yielded an increase of the density of low temperature hot pressed samples by 25% in comparison to pure commercial B4C. Possible chemical reactions and mechanisms in the synthesis of B4C were examined with the Gibbs free energies of reactions. The most likely reaction was the reduction of B2O3 vapor at the surfaces of the carbon particles after its vapor transport from the liquid B2O3. An observed reduction of B4C yield above 1623 K was probably caused by loss of B2O3 vapor from the reaction mixture.

  5. Size effects on the infrared responses of boron carbide nanotubes

    Science.gov (United States)

    ElBiyaali, A.; Bentaleb, M.; Chadli, H.; Boutahir, M.; Rahmani, A. H.; Fakrach, B.; Hermet, P.; Rahmani, A.

    2016-10-01

    The spectral moment's method combined with a force constant model is used to calculate the polarized infrared spectra in single-walled BC3 nanotubes. We discuss the evolution of these spectra as a function of the diameter, chirality and length of nanotubes. Our work provides benchmark theoretical data for the assignment of experimental infrared spectra.

  6. Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

    Science.gov (United States)

    2007-03-01

    clean gloves, place the substrates on the substrate holder and tighten the mask with clean nuts and bolts. Tighten screws in a clockwise fashion to...hydrofluoric acid (HF) in the fume hood with their glazed surfaces upright and etch for at least 10 minutes. 4. To handle HF: Wear glass shield, apron

  7. Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility

    Science.gov (United States)

    2014-11-18

    used in refractory applications, abrasive powders, and body armor and as a neutron radiation absorbent.11−21 However, B4C fractures easily just above...dynamically stable. The B/G criterion is only an empirical rule to estimate ductility for metals .34 To prove that the new structure (B11Cp)−Si2 has good...1994, 6, 549− 560. (3) Veprek, S.; Zeer, A.; Riedel, R. Handbook of Ceramic Hard Materials; Wiley-VCH Press: Weinheim, Germany, 2000. (4) An, Q

  8. Tribological properties of hot-pressed boron carbide ceramic

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Sliding friction experiments were conducted on hot-pressed B4C ceramic under the condition of sliding contact with themselves in air. The tests were run at average sliding velocity of 1.41  m/s and normal forces ranging from 11.8  N to 37.6  N. The friction coefficients decrease with the increase of sliding distance and the increase of normal load. The lowest friction coefficient is as low as 0.09, compared to 0.35~0.40 as the initial friction coefficient. X-ray diffraction was used to analyze the sliding surface before and after friction tests. The results show that the tribochemical reaction between B4C and O2 produces B2O3, and B2O3 undergoes a secondary chemical reaction with moisture in the air to form H3BO3, which is responsible for the lower friction coefficients. The low-friction mechanism of boric acid is associated with its layered-triclinic-crystal structure. The atoms on each layer are closely packed and strongly bonded to each other, but the layers are widely separated and are held together by van der Waals force. Regarding the wear rate of B4C ceramics used in friction experiments, there is not any wear could be measured by using a surface profilometer.

  9. Development and Performance of Boron Carbide-Based Smoke Compositions

    Science.gov (United States)

    2013-03-06

    RDECOM-ECBC Aberdeen Proving Ground, MD 21010, USA 622 2013 Wiley-VCH Verlag GmbH&Co. KGaA, Weinheim Propellants Explos. Pyrotech. 2013, 38, 622...black iron oxide, 12.3 wt-% aluminum, 3.8 wt-% charcoal, and 5.6 wt- % nitrocellulose in acetone was applied. These items were dried overnight in a...100 ·x)% of the volume distribution is below. Propellants Explos. Pyrotech. 2013, 38, 622 – 628 2013 Wiley-VCH Verlag GmbH&Co. KGaA, Weinheim

  10. R.F. magnetron sputtering of multilayered c-BN films on cemented carbide tool.

    Science.gov (United States)

    Park, Sungtae; Jeong, Sehoon; Lee, Kwangmin

    2011-02-01

    A c-BN thin film was deposited using a B4C target in a r.f. magnetron sputtering system. The c-BN layer was coated with a TiAIN adhesion layer (approximately 2 microm), boron carbide (approximately 1 microm) and BCN (10 approximately 15 nm) nano-gradient layer system. The c-BN layers with thicknesses of more than 0.5 microm were successfully deposited onto cemented carbide substrates. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of sp3 BN bonds.

  11. Synthesis and structural evolution of vanadium carbide in nano scale during mechanical alloying

    Directory of Open Access Journals (Sweden)

    Mohsen Hossein-Zadeh

    2016-07-01

    Full Text Available In this study, nano crystalline vanadium carbide was synthesized by mechanical alloying method. V2O5, C and Mg powders were placed in a planetary ball mill and sampled after different milling times. XRD and FESEM were used for characterization of synthesized powder. Studies showed that crystalline V8C7 has been synthesized by 24 h milling and subsequently heat treatment at 800 °C. It was concluded that the V8C7 crystallites were nano sized and the lattice parameter deviated slightly from the standard size. Furthermore, milling led to increase in strain and decrease of vanadium carbide particle size.

  12. Bietti's Crystalline Dystrophy

    Science.gov (United States)

    ... Dystrophy > Facts About Bietti's Crystalline Dystrophy Facts About Bietti's Crystalline Dystrophy This information was developed by the ... is the best person to answer specific questions. Bietti’s Crystalline Dystrophy Defined What is Bietti’s Crystalline Dystrophy? ...

  13. Standard specification for boron-Based neutron absorbing material systems for use in nuclear spent fuel storage racks

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2011-01-01

    1.1 This specification defines criteria for boron-based neutron absorbing material systems used in racks in a pool environment for storage of nuclear light water reactor (LWR) spent-fuel assemblies or disassembled components to maintain sub-criticality in the storage rack system. 1.2 Boron-based neutron absorbing material systems normally consist of metallic boron or a chemical compound containing boron (for example, boron carbide, B4C) supported by a matrix of aluminum, steel, or other materials. 1.3 In a boron-based absorber, neutron absorption occurs primarily by the boron-10 isotope that is present in natural boron to the extent of 18.3 ± 0.2 % by weight (depending upon the geological origin of the boron). Boron, enriched in boron-10 could also be used. 1.4 The materials systems described herein shall be functional – that is always be capable to maintain a B10 areal density such that subcriticality Keff <0.95 or Keff <0.98 or Keff < 1.0 depending on the design specification for the service...

  14. Effect of molybdenum, vanadium, boron on mechanical properties of high chromium white cast iron in as-cast condition

    Science.gov (United States)

    Nurjaman, F.; Sumardi, S.; Shofi, A.; Aryati, M.; Suharno, B.

    2016-02-01

    In this experiment, the effect of the addition carbide forming elements on high chromium white cast iron, such as molybdenum, vanadium and boron on its mechanical properties and microstructure was investigated. The high chromium white cast iron was produced by casting process and formed in 50 mm size of grinding balls with several compositions. Characterization of these grinding balls was conducted by using some testing methods, such as: chemical and microstructure analysis, hardness, and impact test. From the results, the addition of molybdenum, vanadium, and boron on high chromium white cast iron provided a significant improvement on its hardness, but reduced its toughness. Molybdenum induced fully austenitic matrix and Mo2C formation among eutectic M7C3 carbide. Vanadium was dissolved in the matrix and carbide. While boron was played a role to form fine eutectic carbide. Grinding balls with 1.89 C-13.1 Cr-1.32 Mo-1.36 V-0.00051 B in as-cast condition had the highest hardness, which was caused by finer structure of eutectic carbide, needle like structure (upper bainite) matrix, and martensite on its carbide boundary.

  15. Boronate Derivatives of Functionally Diverse Catechols: Stability Studies

    Directory of Open Access Journals (Sweden)

    Kamal Aziz Ketuly

    2010-03-01

    Full Text Available Benzeneboronate of catecholic carboxyl methyl esters, N-acetyldopamine, coumarin and catechol estrogens were prepared as crystalline derivatives in high yield. Related catechol compounds with extra polar functional group(s (OH, NH2 do not form or only partially form unstable cyclic boronate derivatives.

  16. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  17. High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride

    Science.gov (United States)

    Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk

    1997-01-01

    High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

  18. Silicon Carbide Solar Cells Investigated

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  19. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-05

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite.

  20. Silicon Carbide/Boron Nitride Dual In-Line Coating of Silicon Carbide Fiber Tows Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will demonstrate monolayer and dual layer coating of SiC fiber by leveraging Laser Chemical Vapor Deposition techniques developed by Free...

  1. Sol–gel processing of carbidic glasses

    Indian Academy of Sciences (India)

    L M Manocha; E Yasuda; Y Tanabe; S Manocha; D Vashistha

    2000-02-01

    Carbon incorporation into the silicate network results in the formation of rigid carbidic glasses with improved physical, mechanical and thermal properties. This generated great interest in the development of these heteroatom structured materials through different processing routes. In the present studies, sol–gel processing has been used to prepare silicon based glasses, especially oxycarbides through organic–inorganic hybrid gels by hydrolysis–condensation reactions in silicon alkoxides, 1,4-butanediol and furfuryl alcohol with an aim to introduce Si–C linkages in the precursors at sol level. The incorporation of these linkages has been studied using IR and NMR spectroscopy. These bonds, so introduced, are maintained throughout the processing, especially during pyrolysis to high temperatures. In FFA–TEOS system, copolymerization with optimized mol ratio of the two results in resinous mass. This precursor on pyrolysis to 1000°C results in Si–O–C type amorphous solid black mass. XRD studies on the materials heated to 1400°C exhibit presence of crystalline Si–C and cristobalites in amorphous Si–O–C mass. In organic–inorganic gel system, the pyrolysed mass exhibits phase stability up to much higher temperatures. The carbidic materials so produced have been found to exhibit good resistance against oxidation at 1000°C.

  2. Raman effect in icosahedral boron-rich solids

    Science.gov (United States)

    Werheit, Helmut; Filipov, Volodymyr; Kuhlmann, Udo; Schwarz, Ulrich; Armbrüster, Marc; Leithe-Jasper, Andreas; Tanaka, Takaho; Higashi, Iwami; Lundström, Torsten; Gurin, Vladimir N; Korsukova, Maria M

    2010-01-01

    We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB66, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects. Vibrations of the icosahedra, occurring in all the spectra, are interpreted using the description of modes in α-rhombohedral boron by Beckel et al. The Raman spectrum of boron carbide is largely clarified. Relative intra- and inter-icosahedral bonding forces are estimated for the different structural groups and for vanadium-doped β-rhombohedral boron. The validity of Badger's rule is demonstrated for the force constants of inter-icosahedral B–B bonds, whereas the agreement is less satisfactory for the intra-icosahedral B–B bonds. PMID:27877328

  3. Raman effect in icosahedral boron-rich solids

    Directory of Open Access Journals (Sweden)

    Helmut Werheit, Volodymyr Filipov, Udo Kuhlmann, Ulrich Schwarz, Marc Armbrüster, Andreas Leithe-Jasper, Takaho Tanaka, Iwami Higashi, Torsten Lundström, Vladimir N Gurin and Maria M Korsukova

    2010-01-01

    Full Text Available We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB66, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects. Vibrations of the icosahedra, occurring in all the spectra, are interpreted using the description of modes in α-rhombohedral boron by Beckel et al. The Raman spectrum of boron carbide is largely clarified. Relative intra- and inter-icosahedral bonding forces are estimated for the different structural groups and for vanadium-doped β-rhombohedral boron. The validity of Badger's rule is demonstrated for the force constants of inter-icosahedral B–B bonds, whereas the agreement is less satisfactory for the intra-icosahedral B–B bonds.

  4. Silicon carbide sewing thread

    Science.gov (United States)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  5. XPS, SIMS and FTIR-ATR characterization of boronized graphite from the thermonuclear plasma device RFX-mod

    Energy Technology Data Exchange (ETDEWEB)

    Ghezzi, F., E-mail: ghezzi@ifp.cnr.it [Istituto di Fisica del Plasma, Consiglio Nazionale delle Ricerche, via Cozzi 53, 20125 Milan (Italy); Laguardia, L.; Caniello, R. [Istituto di Fisica del Plasma, Consiglio Nazionale delle Ricerche, via Cozzi 53, 20125 Milan (Italy); Canton, A.; Dal Bello, S.; Rais, B. [Consorzio RFX, Corso Stati Uniti 4, 35127 Padova (Italy); Anderle, M. [Knowledge Department, Provincia Autonoma di Trento, 38123, Trento (Italy)

    2015-11-01

    Highlights: • XPS, ATR and SIMS characterization of samples from the first wall of RFX-mod device. • Amorphous hydrogenated boron carbide plus other carbon type bonds. • Results suggest to increase the number of electrode used for boronization. - Abstract: In this paper the characterization of a thin (tens of nanometers) boron layer on fine grain polycrystalline graphite substrate is presented. The boron film is used as conditioning technique for the full graphite wall of the Reversed Field eXperiment–modified (RFX-mod) experiment, a device for the magnetic confinement of plasmas of thermonuclear interest. Aim of the present analysis is to enlighten the chemical structure of the film, the trapping mechanism that makes it a getter for oxygen and hydrogen and the reason of its loss of effectiveness after exposure to about 100 s of hydrogen plasma. X-ray Photoelectron Spectroscopy (XPS), Secondary Ions Mass Spectrometry (SIMS) and Fourier Transform Infra Red spectroscopy in combination with the Attenuated Total Reflectance (FTIR-ATR) were used to obtain the structure and the chemical composition of graphitic samples as coated or coated and subsequently exposed to hydrogen plasma after boron deposition. The boron layers on the only coated samples were found to be amorphous hydrogenated boron carbide plus a variety of bonds like B-B, B-H, B-O, B-OH, C-C, C-H, C-O, C-OH. Both the thickness and the homogeneity of the layers were found to depend on the distance of the sample from the anode during the deposition. The samples contained oxygen along the layer thickness, at level of 5%, bound to boron. The gettering action of the boron is therefore already active during the deposition itself. The exposure to plasma caused erosion of the boron film and higher content of H and O bound to boron throughout the whole thickness. The interaction of the B layer with plasma is therefore a bulk phenomenon.

  6. Sensitivity analysis of a PWR fuel element using zircaloy and silicon carbide claddings

    Energy Technology Data Exchange (ETDEWEB)

    Faria, Rochkhudson B. de; Cardoso, Fabiano; Salome, Jean A.D.; Pereira, Claubia; Fortini, Angela, E-mail: rochkhudson@ufmg.br, E-mail: claubia@nuclear.ufmg.br [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Escola de Engenharia. Departamento de Engenharia Nuclear

    2015-07-01

    The alloy composed of zirconium has been used effectively for over 50 years in claddings of nuclear fuel, especially for PWR type reactors. However, to increase fuel enrichment with the aim of raising the burning and maintaining the safety of nuclear plants is of great relevance the study of new materials that can replace safely and efficiently zircaloy cladding. Among several proposed material, silicon carbide (SiC) has a potential to replace zircaloy as fuel cladding material due to its high-temperature tolerance, chemical stability and low neutron affinity. In this paper, the goal is to expand the study with silicon carbide cladding, checking its behavior when submitted to an environment with boron, burnable poison rods, and temperature variations. Sensitivity calculation and the impact in multiplication factor to both claddings, zircaloy and silicon carbide, were performed during the burnup. The neutronic analysis was made using the SCALE 6.0 (Standardized Computer Analysis for Licensing Evaluation) code. (author)

  7. ENTIRELY AQUEOUS SOLUTION-GEL ROUTE FOR THE PREPARATION OF ZIRCONIUM CARBIDE, HAFNIUM CARBIDE AND THEIR TERNARY CARBIDE POWDERS

    Directory of Open Access Journals (Sweden)

    Zhang Changrui

    2016-07-01

    Full Text Available An entirely aqueous solution-gel route has been developed for the synthesis of zirconium carbide, hafnium carbide and their ternary carbide powders. Zirconium oxychloride (ZrOCl₂.8H₂O, malic acid (MA and ethylene glycol (EG were dissolved in water to form the aqueous zirconium carbide precursor. Afterwards, this aqueous precursor was gelled and transformed into zirconium carbide at a relatively low temperature (1200 °C for achieving an intimate mixing of the intermediate products. Hafnium and the ternary carbide powders were also synthesized via the same aqueous route. All the zirconium, hafnium and ternary carbide powders exhibited a particle size of ∼100 nm.

  8. Crystalline Confinement

    CERN Document Server

    Banerjee, D; Jiang, F -J; Wiese, U -J

    2013-01-01

    We show that exotic phases arise in generalized lattice gauge theories known as quantum link models in which classical gauge fields are replaced by quantum operators. While these quantum models with discrete variables have a finite-dimensional Hilbert space per link, the continuous gauge symmetry is still exact. An efficient cluster algorithm is used to study these exotic phases. The $(2+1)$-d system is confining at zero temperature with a spontaneously broken translation symmetry. A crystalline phase exhibits confinement via multi-stranded strings between charge-anti-charge pairs. A phase transition between two distinct confined phases is weakly first order and has an emergent spontaneously broken approximate $SO(2)$ global symmetry. The low-energy physics is described by a $(2+1)$-d $\\mathbb{R}P(1)$ effective field theory, perturbed by a dangerously irrelevant $SO(2)$ breaking operator, which prevents the interpretation of the emergent pseudo-Goldstone boson as a dual photon. This model is an ideal candidat...

  9. Single-Crystal Tungsten Carbide in High-Temperature In-Situ Additive Manufacturing Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kolopus, James A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Boatner, Lynn A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-05-18

    Nanoindenters are commonly used for measuring the mechanical properties of a wide variety of materials with both industrial and scientific applications. Typically, these instruments employ an indenter made of a material of suitable hardness bonded to an appropriate shaft or holder to create an indentation on the material being tested. While a variety of materials may be employed for the indenter, diamond and boron carbide are by far the most common materials used due to their hardness and other desirable properties. However, as the increasing complexity of new materials demands a broader range of testing capabilities, conventional indenter materials exhibit significant performance limitations. Among these are the inability of diamond indenters to perform in-situ measurements at temperatures above 600oC in air due to oxidation of the diamond material and subsequent degradation of the indenters mechanical properties. Similarly, boron carbide also fails at high temperature due to fracture. [1] Transition metal carbides possess a combination of hardness and mechanical properties at high temperatures that offer an attractive alternative to conventional indenter materials. Here we describe the technical aspects for the growth of single-crystal tungsten carbide (WC) for use as a high-temperature indenter material, and we examine a possible approach to brazing these crystals to a suitable mount for grinding and attachment to the indenter instrument. The use of a by-product of the recovery process is also suggested as possibly having commercial value.

  10. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  11. Quantum emission from hexagonal boron nitride monolayers

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J.; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  12. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran

    2011-01-01

    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  13. Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

    Science.gov (United States)

    Mieskowski, Diane M.; Sanders, William A.

    1989-01-01

    Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

  14. Technology of Iron Carbide Synthesis

    Institute of Scientific and Technical Information of China (English)

    M.Bahgat

    2006-01-01

    Iron carbides are very promising metallurgical products and can be used for steelmaking process, where it plays as an alternative raw material with significant economic advantages. Also it has many other applications,e.g. catalysts, magnets, sensors. The present review investigates the different properties and uses of the iron carbides. The commercial production and the different varieties for the iron carbides synthesis (gaseous carburization, mechanochemical synthesis, laser pyrolysis, plasma pyrolysis, chemical vapor deposition and ion implantation) were reviewed. Also the effect of different factors on the carburization process like gas composition, raw material, temperature, reaction time, catalyst presence and sulfur addition was indicated.

  15. Effect of Boron and Heat Treatment on Mechanical Properties of White Cast Iron for Mining Application%Effect of Boron and Heat Treatment on Mechanical Properties of White Cast Iron for Mining Application

    Institute of Scientific and Technical Information of China (English)

    Havva Kazdal Zeytin; Hakan Yildirim; Banu Berme; Selim Duduoglu; Gtirkan Kazdal; Adem Deniz

    2011-01-01

    Heat treatment methods were applied to white cast iron for improving the impact and wear resistance. Additionally, chemical composition optimization was made. Furthermore, the effect of boron addition on such applica- tions was investigated. Samples were investigated by using optical and electron microscope methods. Hardness, wear and impact tests were conducted. The results showed that the secondary carbides in the standard alloy were iron-enriched, needle-like carbides M3C when the boron-added alloy contained Fe23 (C, B)6 type, globular secondary carbides. It was concluded that heat treatment B provided higher wear and hardness properties, compared to the stand- ard heat treatment. Optimum mechanical properties were obtained by lower destabilisation temperatures and increasing temperature reduced the wear resistance and hardness.

  16. Microstructural Study of Titanium Carbide Coating on Cemented Carbide

    DEFF Research Database (Denmark)

    Vuorinen, S.; Horsewell, Andy

    1982-01-01

    Titanium carbide coating layers on cemented carbide substrates have been investigated by transmission electron microscopy. Microstructural variations within the typically 5µm thick chemical vapour deposited TiC coatings were found to vary with deposit thickness such that a layer structure could...... be delineated. Close to the interface further microstructural inhomogeneities were obsered, there being a clear dependence of TiC deposition mechanism on the chemical and crystallographic nature of the upper layers of the multiphase substrate....

  17. Methods for producing silicon carbide architectural preforms

    Science.gov (United States)

    DiCarlo, James A. (Inventor); Yun, Hee (Inventor)

    2010-01-01

    Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties for each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

  18. Ballistic Evaluation of rolled Homogeneous Steel Armor with Tungsten Carbide and Titanium Carbide Facing.

    Science.gov (United States)

    1960-12-01

    LABORATORIES BALLISTIC EVALUATION OF ROLLED HMtOGE14EOUS STEEL ASWKR f VITH TUNGSTEN CARBIDE AND TITANIUM CARBIDE FACING (U) TECHNICAL REPORT NO. WAL...carbide steel and titanium carbide steel composite armor when attacked by cal. .40 H19B WC cores, cal. .0 AP W2 projectiles, ZOIN fragment simulating...determine the effectiveness of tungsten car- bide (WC) and titanium carbide (TIC) facing on steel armor for the defeat of steel and tungsten carbide

  19. Boron and the kidney.

    Science.gov (United States)

    Pahl, Madeleine V; Culver, B Dwight; Vaziri, Nosratola D

    2005-10-01

    Boron, the fifth element in the periodic table, is ubiquitous in nature. It is present in food and in surface and ocean waters, and is frequently used in industrial, cosmetic, and medical settings. Exposure to boron and related compounds has been recently implicated as a potential cause of chronic kidney disease in Southeast Asia. This observation prompted the present review of the published data on the effects of acute and chronic exposure to boron on renal function and structure in human beings and in experimental animals.

  20. Structural Modification in Carbon Nanotubes by Boron Incorporation

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2009-01-01

    Full Text Available Abstract We have synthesized boron-incorporated carbon nanotubes (CNTs by decomposition of ferrocene and xylene in a thermal chemical vapor deposition set up using boric acid as the boron source. Scanning and transmission electron microscopy studies of the synthesized CNT samples showed that there was deterioration in crystallinity and improvement in alignment of the CNTs as the boron content in precursor solution increased from 0% to 15%. Raman analysis of these samples showed a shift of ~7 cm−1in wave number to higher side and broadening of the G band with increasing boron concentration along with an increase in intensity of the G band. Furthermore, there was an increase in the intensity of the D band along with a decrease in its wave number position with increase in boron content. We speculate that these structural modifications in the morphology and microstructure of CNTs might be due to the charge transfer from boron to the graphite matrix, resulting in shortening of the carbon–carbon bonds.

  1. Molten Boron Phase-Change Thermal Energy Storage to Augment Solar Thermal Propulsion Systems

    Science.gov (United States)

    2011-07-13

    Titanium 1941 295 21.9 Zirconium 2128 153 22.7 Chromium 2180 403 93.9 Vanadium 2183 422 30.7 Rhodium 2237 258 150 Boron 2570 4600 27.4 Hafnium ...Beckman, S., Gusman, M, Johnson, S., Processing, Properties and Arc Jet Oxidation of Hafnium Diboride/Silicon Carbide Ultra High Temperature Ceramics...Engineering Data, Vol. 13, No. 2, April 1968, pp. 231-234. 43Mar, R., "High-temperature Thermal Analysis of High Boron Alloys Using Automatic Optical

  2. Boron-Based Drug Design.

    Science.gov (United States)

    Ban, Hyun Seung; Nakamura, Hiroyuki

    2015-06-01

    The use of the element boron, which is not generally observed in a living body, possesses a high potential for the discovery of new biological activity in pharmaceutical drug design. In this account, we describe our recent developments in boron-based drug design, including boronic acid containing protein tyrosine kinase inhibitors, proteasome inhibitors, and tubulin polymerization inhibitors, and ortho-carborane-containing proteasome activators, hypoxia-inducible factor 1 inhibitors, and topoisomerase inhibitors. Furthermore, we applied a closo-dodecaborate as a water-soluble moiety as well as a boron-10 source for the design of boron carriers in boron neutron capture therapy, such as boronated porphyrins and boron lipids for a liposomal boron delivery system.

  3. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  4. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  5. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  6. Amorphous boron nanorod as an anode material for lithium-ion batteries at room temperature.

    Science.gov (United States)

    Deng, Changjian; Lau, Miu Lun; Barkholtz, Heather M; Xu, Haiping; Parrish, Riley; Xu, Meiyue Olivia; Xu, Tao; Liu, Yuzi; Wang, Hao; Connell, Justin G; Smith, Kassiopeia A; Xiong, Hui

    2017-08-03

    We report an amorphous boron nanorod anode material for lithium-ion batteries prepared through smelting non-toxic boron oxide in liquid lithium. Boron in theory can provide capacity as high as 3099 mA h g(-1) by alloying with Li to form B4Li5. However, experimental studies of the boron anode have been rarely reported for room temperature lithium-ion batteries. Among the reported studies the electrochemical activity and cycling performance of the bulk crystalline boron anode material are poor at room temperature. In this work, we utilized an amorphous nanostructured one-dimensional (1D) boron material aiming at improving the electrochemical reactivity between boron and lithium ions at room temperature. The amorphous boron nanorod anode exhibited, at room temperature, a reversible capacity of 170 mA h g(-1) at a current rate of 10 mA g(-1) between 0.01 and 2 V. The anode also demonstrated good rate capability and cycling stability. The lithium storage mechanism was investigated by both sweep voltammetry measurements and galvanostatic intermittent titration techniques (GITTs). The sweep voltammetric analysis suggested that the contributions from lithium ion diffusion into boron and the capacitive process to the overall lithium charge storage are 57% and 43%, respectively. The results from GITT indicated that the discharge capacity at higher potentials (>∼0.2 V vs. Li/Li(+)) could be ascribed to a capacitive process and at lower potentials (lithium-ion batteries.

  7. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  8. Ultrahard nanotwinned cubic boron nitride.

    Science.gov (United States)

    Tian, Yongjun; Xu, Bo; Yu, Dongli; Ma, Yanming; Wang, Yanbin; Jiang, Yingbing; Hu, Wentao; Tang, Chengchun; Gao, Yufei; Luo, Kun; Zhao, Zhisheng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan

    2013-01-17

    Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size. Polycrystalline cBN materials are often synthesized by using the martensitic transformation of a graphite-like BN precursor, in which high pressures and temperatures lead to puckering of the BN layers. Such approaches have led to synthetic polycrystalline cBN having grain sizes as small as ∼14 nm (refs 1, 2, 4, 5). Here we report the formation of cBN with a nanostructure dominated by fine twin domains of average thickness ∼3.8 nm. This nanotwinned cBN was synthesized from specially prepared BN precursor nanoparticles possessing onion-like nested structures with intrinsically puckered BN layers and numerous stacking faults. The resulting nanotwinned cBN bulk samples are optically transparent with a striking combination of physical properties: an extremely high Vickers hardness (exceeding 100 GPa, the optimal hardness of synthetic diamond), a high oxidization temperature (∼1,294 °C) and a large fracture toughness (>12 MPa m(1/2), well beyond the toughness of commercial cemented tungsten carbide, ∼10 MPa m(1/2)). We show that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall-Petch effect below a critical grain size or the twin thickness of ∼10-15 nm found in metals and alloys.

  9. Palladium interaction with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M., E-mail: Marialuisa.Gentile@manchester.ac.uk [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom); Xiao, P. [Materials Science Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Abram, T. [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-07-15

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd{sub 3}Si and SiO{sub 2} phases, while the second peak and the third peak are correlated with the formation of Pd{sub 2}Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO{sub 2} phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiC{sub x}O{sub y} phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  10. Palladium interaction with silicon carbide

    Science.gov (United States)

    Gentile, M.; Xiao, P.; Abram, T.

    2015-07-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC-5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  11. Oxidation induced ionization and reactions of metal carbide clusters (Nb, Zr, V, Ta)

    Science.gov (United States)

    Deng, H. T.; Kerns, K. P.; Bell, R. C.; Castleman, A. W.

    1997-11-01

    Following our recent report of the oxidation induced formation of Ti8C12+ (H.T. Deng, K.P. Kerns, and A.W. Castleman, Jr., J. Chem. Phys. 104 (1996) 4862), the oxidation induced ionization of niobium and zirconium carbide clusters are studied using a triple quadrupole mass spectrometer coupled with a laser induced plasma reaction source. It was found that reactions of both of these neutral carbide clusters with dioxygen leads to formation of carbide ions. The ion product distributions show that zirconium carbide clusters mainly take the form of Met--Car cations, but niobium carbide clusters favor a cubic-like crystalline pattern. Furthermore, reactions of mass-selected NbxCy+ with dioxygen result in a sequential loss of C2 units from NbxCy+, and leads to formation of Nbx+ and NbxC+ depending on y being an even or odd number. However, NbxCy+ shows comparably low reactivity towards nitrous oxide through a single oxygen abstraction mechanism. In comparison with the reaction products of VxCy+ with dioxygen, the complementary information obtained in the present study suggests that the C2 unit is a basic building block for formation of small early transition metal carbide clusters. The oxidation induced ionization mechanisms are also discussed in relation with the stability, ionization potentials, and structures of the clusters.

  12. Effects of boron-doping on the morphology and magnetic property of carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    JIANG Qi; QIAN Lan; YI Jing; ZHU Xiaotong; ZHAO Yong

    2007-01-01

    Boron carbide nanotubes (nano-fibers) was prepared by B powder and carbon nanotubes (CNTs) at high temperature in a vacuumed quartz tube.The morphology,microstructure,component and magnetic property of samples were characterized by transmission electron microscopy (TEM),X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and magnetic property measurement system (MPMS) controller.The results showed that B-doping CNTs have great difference in the morphology and magnetic property from those of pristine CNTs.

  13. Boron - A potential goiterogen?

    Science.gov (United States)

    Popova, Elizaveta V; Tinkov, Alexey A; Ajsuvakova, Olga P; Skalnaya, Margarita G; Skalny, Anatoly V

    2017-07-01

    The iodine deficiency disorders (IDD) include a variety of disturbances such as decreased fertility, increased perinatal and infant mortality, impaired physical and intellectual development, mental retardation, cretinism, hypothyroidism, and endemic goiter (EG). The occurrence of the latter is determined by interplay between genetic and environmental factors. The major environmental factor is iodine status that is required for normal thyroid hormone synthesis. However, other factors like intake of micronutrients and goiterogens also have a significant impact. Essential and toxic trace elements both play a significant role in thyroid physiology. We hypothesize that in terms of overexposure boron may serve as a potential goiterogen. In particular, it is proposed that boron overload may impair thyroid physiology ultimately leading to goiter formation. Certain studies provide evidential support of the hypothesis. In particular, it has been demonstrated that serum and urinary B levels are characterized by a negative association with thyroid hormone levels in exposed subjects. Single indications on the potential efficiency of B in hypothyroidism also exist. Moreover, the levels of B were found to be interrelated with thyroid volume in children environmentally exposed to boron. Experimental studies also demonstrated a significant impact of boron on thyroid structure and hormone levels. Finally, the high rate of B cumulation in thyroid may also indicate that thyroid is the target for B activity. Chemical properties of iodine and boron also provide a background for certain competition. However, it is questionable whether these interactions may occur in the biological systems. Further clinical and experimental studies are required to support the hypothesis of the involvement of boron overexposure in goiter formation. If such association will be confirmed and the potential mechanisms elucidated, it will help to regulate the incidence of hypothyroidism and goiter in endemic

  14. Laser melting of uranium carbides

    Science.gov (United States)

    Utton, C. A.; De Bruycker, F.; Boboridis, K.; Jardin, R.; Noel, H.; Guéneau, C.; Manara, D.

    2009-03-01

    In the context of the material research aimed at supporting the development of nuclear plants of the fourth Generation, renewed interest has recently arisen in carbide fuels. A profound understanding of the behaviour of nuclear materials in extreme conditions is of prime importance for the analysis of the operation limits of nuclear fuels, and prediction of possible nuclear reactor accidents. In this context, the main goal of the present paper is to demonstrate the feasibility of laser induced melting experiments on stoichiometric uranium carbides; UC, UC1.5 and UC2. Measurements were performed, at temperatures around 3000 K, under a few bars of inert gas in order to minimise vaporisation and oxidation effects, which may occur at these temperatures. Moreover, a recently developed investigation method has been employed, based on in situ analysis of the sample surface reflectivity evolution during melting. Current results, 2781 K for the melting point of UC, 2665 K for the solidus and 2681 K for the liquidus of U2C3, 2754 K for the solidus and 2770 K for the liquidus of UC2, are in fair agreement with early publications where the melting behaviour of uranium carbides was investigated by traditional furnace melting methods. Further information has been obtained in the current research about the non-congruent (solidus-liquidus) melting of certain carbides, which suggest that a solidus-liquidus scheme is followed by higher ratio carbides, possibly even for UC2.

  15. Crystalline and Crystalline International Disposal Activities

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, Hari S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, Paul William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, Nataliia [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, Jeffrey De' Haven [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, Satish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, Timothy M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-12-21

    This report presents the results of work conducted between September 2014 and July 2015 at Los Alamos National Laboratory in the crystalline disposal and crystalline international disposal work packages of the Used Fuel Disposition Campaign (UFDC) for DOE-NE’s Fuel Cycle Research and Development program.

  16. Effect of factors on the extraction of boron from slags

    Science.gov (United States)

    Zhang, Peixin; Sui, Zhitong

    1995-04-01

    The effects of slag composition, additive agent, and heat treatment on the crystal morphologies, the crystallization behavior, and the efficiency of extraction of boron (EEB) from slags were investigated by chemical analysis, polarization microscope, and X-ray diffraction (XRD) as well as differential thermal analysis (DTA). The EEB varied with the slag composition. The farther the slag composition deviated from the line between 2MgO · B2O3 and 2MgO · SiO2 in the MgO-B2O3-SiO2 system, the lower the EEB. The EEB was directly related to the precipitating characteristics of the boron component in the slags. The EEB was high if the boron component existed in the form of a crystalline phase, otherwise the EEB was low when boron was in the form of an amorphous phase. The EEB from MgO-Al2O3-CaO-B2O3-SiO2 slag varied with the temperature of heat treatment; the highest EEB appeared at 1100 °C. The EEB and the crystallinities were increased by addition of TiO2 and MOx (M = Mg, Ca, Fe, Si). The effect of MOx was more notable than that of TiO2.

  17. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  18. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  19. Laser surface alloying of commercially pure titanium with boron and carbon

    Science.gov (United States)

    Makuch, N.; Kulka, M.; Dziarski, P.; Przestacki, D.

    2014-06-01

    Laser surface alloying with boron and carbon was applied to produce the composite layers, reinforced by the hard ceramic phases (titanium borides and titanium carbides), on commercially pure titanium. The external cylindrical surface of substrate material was coated by paste containing boron, boron and graphite, or graphite. Then, the laser re-melting was carried out with using the continuous-wave CO2 laser. This enabled the formation of laser-borided, laser-borocarburized, and laser-carburized layers. The microstructure or the re-melted zone consisted of the hard ceramic phases (TiB+TiB2, TiB+TiB2+TiC, or TiC) located in the eutectic mixture of Tiα'-phase with borides, borides and carbides, or carbides, respectively. All the composite layers were characterized by the sufficient cohesion. The significant increase in microhardness and in wear resistance of all the laser-alloyed layers was observed in comparison with commercially pure titanium. The percentage of hard ceramic phases in more plastic eutectic mixture influenced the measured microhardness values. The dominant wear mechanism (abrasive or adhesive) depended on the method of laser alloying, and the type of test used. The wear tests for longer duration, without the change in the counter specimen, created the favourable conditions for adhesive wear, while during the shorter tests the abrasive wear dominated, as a rule.

  20. The preparation and composition design of boron-rich lanthanum hexaboride target for sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Defang; Min, Guanghui; Wu, Yan; Yu, Huashun; Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn

    2015-07-25

    Highlights: • High-purity LaB{sub 6} powder was prepared due to significant reduction of residual B{sub 4}C and effective purification process. • The effects of raw materials ratio on the size, morphology, phase structure and crystalline size of LaB{sub 6} were studied. • The correlation of component between LaB{sub 6} films and boron-rich targets was established. • The variation of densities of LaB{sub 6} targets with sintering time and sintering temperature was investigated. - Abstract: Lanthanum Hexaboride (LaB{sub 6}) nano-film has been proved to be promising transparent thermal insulation material, while its properties are limited on purity and composition. High-purity LaB{sub 6} polycrystalline powder was prepared through boron carbide reduction method in this work. A series of techniques such as scanning electron microscopy, X-ray diffraction, laser particle analyzer and inductively coupled plasma emission spectrometer were employed to characterize LaB{sub 6} powder. As raising the content of La{sub 2}O{sub 3} in reactants, more uniform, finer (2.686 μm) and purer (99.5139 wt%) LaB{sub 6} powder is prepared, with only 0.4434 wt% residual B{sub 4}C. The density of targets increases with the rise of sintering temperature and the extension of sintering time, while crystallite size increases simultaneously with the extension of sintering time. The introduction of B powder in target is conductive to sintering process, increasing hardness and flexural strength of targets. X-ray photoelectron spectrometer was used to characterize the composition and microstructure of LaB{sub 6} nano-film which is tentatively considered to be composed of LaB{sub 6} nanocrystalline and amorphous microstructure of La and B atoms. The film LaB{sub 6.0627±0.02} was obtained when the ratio of B and La of sputtering target reached 12.5. The thickness and deposition rate decrease with the increase of B content in targets.

  1. Ab initio modelling of boron related defects in amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Tiago A.; Torres, Vitor J.B. [Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal)

    2012-10-15

    We have modeled boron related point defects in amorphous silicon, using an ab initio method, the Density functional theory-pseudopotential code Aimpro. The boron atoms were embedded in 64 atom amorphous silicon cubic supercells. The calculations were performed using boron defects in 15 different supercells. These supercells were developed using a modified Wooten-Winer-Weaire bond switching mechanism. In average, the properties of the 15 supercells agree with the observed radial and bond angle distributions, as well the electronic and vibrational density of states and Raman spectra. In amorphous silicon it has been very hard to find real self-interstitials, since for almost all the tested configurations, the amorphous lattice relaxes overall. We found that substitutional boron prefers to be 4-fold coordinated. We find also an intrinsic hole-trap in the non-doped amorphous lattice, which may explain the low efficiency of boron doping. The local vibrational modes are, in average, higher than the correspondent crystalline values (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. In Vivo Boron Uptake Determination for Boron Neutron Capture Synovectomy

    Energy Technology Data Exchange (ETDEWEB)

    Binello, Emanuela; Shortkroff, Sonya; Yanch, Jacquelyn C.

    1999-06-06

    Boron neutron capture synovectomy (BNCS) has been proposed as a new application of the boron neutron capture reaction for the treatment of rheumatoid arthritis. In BNCS, a boron compound is injected into the joint space, where it is taken up by the synovium. The joint is then irradiated with neutrons of a desired energy range, inducing the boron neutron capture reaction in boron-loaded cells. Boron uptake by the synovium is an important parameter in the assessment of the potential of BNCS and in the determination of whether to proceed to animal irradiations for the testing of therapeutic efficacy. We present results from an investigation of boron uptake in vivo by the synovium.

  3. Reinforcement of tungsten carbide grains by nanoprecipitates in cemented carbides.

    Science.gov (United States)

    Liu, Xingwei; Song, Xiaoyan; Wang, Haibin; Hou, Chao; Liu, Xuemei; Wang, Xilong

    2016-10-14

    In contrast to the conventional method that obtains a high fracture strength of tungsten carbide-cobalt (WC-Co) cemented carbides by reducing WC grain size to near-nano or nanoscale, a new approach has been developed to achieve ultrahigh fracture strength by strengthening the WC grains through precipitate reinforcement. The cemented carbides were prepared by liquid-state sintering the in situ synthesized WC-Co composite powders with a little excess carbon and pre-milled Cr3C2 particles having different size scales. It was found that the nanoscale dispersed particles precipitate in the WC grains, which mainly have a coherent or semi-coherent interface with the matrix. The pinning effect of the nanoparticles on the motion of dislocations within the WC grains was observed. The mechanisms for the precipitation of nanoparticles in the WC grains were discussed, based on which a new method to enhance the resistance against the transgranular fracture of cemented carbides was proposed.

  4. Reinforcement of tungsten carbide grains by nanoprecipitates in cemented carbides

    Science.gov (United States)

    Liu, Xingwei; Song, Xiaoyan; Wang, Haibin; Hou, Chao; Liu, Xuemei; Wang, Xilong

    2016-10-01

    In contrast to the conventional method that obtains a high fracture strength of tungsten carbide-cobalt (WC-Co) cemented carbides by reducing WC grain size to near-nano or nanoscale, a new approach has been developed to achieve ultrahigh fracture strength by strengthening the WC grains through precipitate reinforcement. The cemented carbides were prepared by liquid-state sintering the in situ synthesized WC-Co composite powders with a little excess carbon and pre-milled Cr3C2 particles having different size scales. It was found that the nanoscale dispersed particles precipitate in the WC grains, which mainly have a coherent or semi-coherent interface with the matrix. The pinning effect of the nanoparticles on the motion of dislocations within the WC grains was observed. The mechanisms for the precipitation of nanoparticles in the WC grains were discussed, based on which a new method to enhance the resistance against the transgranular fracture of cemented carbides was proposed.

  5. Challenges of Engineering Grain Boundaries in Boron-Based Armor Ceramics

    Science.gov (United States)

    Coleman, Shawn P.; Hernandez-Rivera, Efrain; Behler, Kristopher D.; Synowczynski-Dunn, Jennifer; Tschopp, Mark A.

    2016-06-01

    Boron-based ceramics are appealing for lightweight applications in both vehicle and personnel protection, stemming from their combination of high hardness, high elastic modulus, and low density as compared to other ceramics and metal alloys. However, the performance of these ceramics and ceramic composites is lacking because of their inherent low fracture toughness and reduced strength under high-velocity threats. The objective of the present article is to briefly discuss both the challenges and the state of the art in experimental and computational approaches for engineering grain boundaries in boron-based armor ceramics, focusing mainly on boron carbide (B4C) and boron suboxide (B6O). The experimental challenges involve processing these ceramics at full density while trying to promote microstructure features such as intergranular films to improve toughness during shock. Many of the computational challenges for boron-based ceramics stem from their complex crystal structure which has hitherto complicated the exploration of grain boundaries and interfaces. However, bridging the gaps between experimental and computational studies at multiple scales to engineer grain boundaries in these boron-based ceramics may hold the key to maturing these material systems for lightweight defense applications.

  6. Novel fabrication of silicon carbide based ceramics for nuclear applications

    Science.gov (United States)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  7. Fabrication of boron-doped carbon fibers by the decomposition of B4C and its excellent rate performance as an anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Huiqi; Ma, Canliang; Yang, Xueteng; Han, Tao; Tao, Zechao; Song, Yan; Liu, Zhanjun; Guo, Quangui; Liu, Lang

    2015-03-01

    A facile route, for the first time, was developed to fabricate boron-doped carbon fibers (BDCFs). Boron was doped into mesosphere pitch-based carbon fibers (CFs) by exposing the CFs in a vapor of boron by the decomposition of boron carbide. The microstructure of BDCFs was characterized by SEM, TEM, XRD and Raman spectroscopy. When used as anode materials for the lithium-ion batteries, BDCFs electrode exhibits an improved performance. Concretely, the specific capacity of BDCFs still had a value of over 400 mAh g-1 after 100 cycles. Moreover, BDCFs exhibits better rate capability and less hysteresis in comparison to the pristine CFs. Such enhanced lithium storage capability can be attributed to the improvement of graphitization properties and the high amount of defects induced by boron.

  8. Magnetic Properties of Nanometer-sized Crystalline and Amorphous Particles

    DEFF Research Database (Denmark)

    Mørup, Steen; Bødker, Franz; Hansen, Mikkel Fougt;

    1997-01-01

    Amorphous transition metal-metalloid alloy particles can be prepared by chemical preparation techniques. We discuss the preparation of transition metal-boron and iron-carbon particles and their magnetic properties. Nanometer-sized particles of both crystalline and amorphous magnetic materials...... are superparamagnetic at finite temperatures. The temperature dependence of the superparamagnetic relaxation time and the influence of inter-particle interactions is discussed. Finally, some examples of studies of surface magnetization of alpha-Fe particles are presented....

  9. Magnetic Properties of Nanometer-sized Crystalline and Amorphous Particles

    DEFF Research Database (Denmark)

    Mørup, Steen; Bødker, Franz; Hansen, Mikkel Fougt

    1997-01-01

    Amorphous transition metal-metalloid alloy particles can be prepared by chemical preparation techniques. We discuss the preparation of transition metal-boron and iron-carbon particles and their magnetic properties. Nanometer-sized particles of both crystalline and amorphous magnetic materials...... are superparamagnetic at finite temperatures. The temperature dependence of the superparamagnetic relaxation time and the influence of inter-particle interactions is discussed. Finally, some examples of studies of surface magnetization of alpha-Fe particles are presented....

  10. The Effect of Boron and Zirconium on Microstructure and Stress-Rupture Life of Nickel-based Superalloy ATI 718Plus

    Directory of Open Access Journals (Sweden)

    Seyed Ali Hosseini

    2015-12-01

    Full Text Available The effects of boron and zirconium on the microstructure, hardness and stressrupture life of the nickel-based superalloy ATI 718Plus were investigated in this study. Four alloys with different percentages of boron (0.005-0.01 wt.% and zirconium (0-0.1 wt% were cast through a vacuum induction melting furnace and then were rolled. The microstructural studies indicated an increased percentage of δ phase, carbide precipitates and twins in the presence of zirconium. The percentage of carbide (boron carbide precipitates was increased and the solidification range of the alloy was decreased in the presence of boron in the composition. Furthermore, the results obtained from the hardness and stress-rupture tests showed the significant role of both elements in increasing hardness and improved rupture life of the alloy. The maximum rupture life was observed in the alloy which contained the highest percentages of boron and zirconium in its composition. This can be attributed mainly to the increased percentage of δ phase on grain boundaries and their enhanced high-temperature strength.

  11. Plasma boron and the effects of boron supplementation in males.

    Science.gov (United States)

    Green, N R; Ferrando, A A

    1994-11-01

    Recently, a proliferation of athletic supplements has been marketed touting boron as an ergogenic aid capable of increasing testosterone. The effect of boron supplementation was investigated in male bodybuilders. Ten male bodybuilders (aged 20 to 26) were given a 2.5-mg boron supplement, while nine male bodybuilders (aged 21 to 27) were given a placebo for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on day 1 and day 49 of the study. A microwave digestion procedure followed by inductively coupled argon plasma spectroscopy was used for boron determination. Twelve subjects had boron values at or above the detection limit with median value of 25 ng/ml (16 ng/ml lower quartile and 33 ng/ml upper quartile). Of the ten subjects receiving boron supplements, six had an increase in their plasma boron. Analysis of variance indicated no significant effect of boron supplementation on any of the other dependent variables. Both groups demonstrated significant increases in total testosterone (p bodybuilding can increase total testosterone, lean body mass, and strength in lesser-trained bodybuilders, but boron supplementation affects these variables not at all.

  12. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  13. Bright prospects for boron

    NARCIS (Netherlands)

    Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  14. Bright prospects for boron

    NARCIS (Netherlands)

    Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  15. Kinetics and Mechanisms of Creep in Sintered Alpha Silicon Carbide and Niobium Carbide.

    Science.gov (United States)

    1985-09-18

    CARBIDE AND NIOBIUM CARBIDE Supported by 30 F (DMR-812-0804) and ARO (MIPR’s 43-48, 127-83, 141-84) U August, 1985 NCSU .LET tow A CL School of Engineering...SILICON CARBIDE AND NIOBIUM CARBIDE Supported by NSF (DMR-812-0804) and ARO (MIPR’s 43-48, 127-83, 141-84) August, 1985 L. U. 1’ ’’ b b MASTER COPY - FOR...and Mechanisms of Creep in Sintered May 1, 1982-June 15, 1985 Alpha Silicon Carbide and Niobium Carbide 6. PERFORMING ORG. REPORT NUMBER 7. AUTHOR(*) 11

  16. Nothing Boring About Boron.

    Science.gov (United States)

    Pizzorno, Lara

    2015-08-01

    The trace mineral boron is a micronutrient with diverse and vitally important roles in metabolism that render it necessary for plant, animal, and human health, and as recent research suggests, possibly for the evolution of life on Earth. As the current article shows, boron has been proven to be an important trace mineral because it (1) is essential for the growth and maintenance of bone; (2) greatly improves wound healing; (3) beneficially impacts the body's use of estrogen, testosterone, and vitamin D; (4) boosts magnesium absorption; (5) reduces levels of inflammatory biomarkers, such as high-sensitivity C-reactive protein (hs-CRP) and tumor necrosis factor α (TNF-α); (6) raises levels of antioxidant enzymes, such as superoxide dismutase (SOD), catalase, and glutathione peroxidase; (7) protects against pesticide-induced oxidative stress and heavy-metal toxicity; (8) improves the brains electrical activity, cognitive performance, and short-term memory for elders; (9) influences the formation and activity of key biomolecules, such as S-adenosyl methionine (SAM-e) and nicotinamide adenine dinucleotide (NAD(+)); (10) has demonstrated preventive and therapeutic effects in a number of cancers, such as prostate, cervical, and lung cancers, and multiple and non-Hodgkin's lymphoma; and (11) may help ameliorate the adverse effects of traditional chemotherapeutic agents. In none of the numerous studies conducted to date, however, do boron's beneficial effects appear at intakes > 3 mg/d. No estimated average requirements (EARs) or dietary reference intakes (DRIs) have been set for boron-only an upper intake level (UL) of 20 mg/d for individuals aged ≥ 18 y. The absence of studies showing harm in conjunction with the substantial number of articles showing benefits support the consideration of boron supplementation of 3 mg/d for any individual who is consuming a diet lacking in fruits and vegetables or who is at risk for or has osteopenia; osteoporosis; osteoarthritis (OA

  17. Synthesis of silicon carbide nanowires in a catalyst-assisted process

    Science.gov (United States)

    Deng, S. Z.; Wu, Z. S.; Zhou, Jun; Xu, N. S.; Chen, Jian; Chen, Jun

    2002-04-01

    At elevated temperatures, silicon carbide nanowires were synthesized in a catalyst-assisted process using aluminum as a catalyst. Transmission electron microscopy shows that the nanowires are around 20 nm in diameter and around 2 μm in length. High resolution transmission electron microscopy shows that the nanowires are crystalline β-SiC. Raman spectra show the typical features of nano-SiC. A model based on vapor-liquid-solid process is proposed to explain our finding.

  18. New high boron content polyborane precursors to advanced ceramic materials: New syntheses, new applications

    Science.gov (United States)

    Guron, Marta

    There is a need for new synthetic routes to high boron content materials for applications as polymeric precursors to ceramics, as well as in neutron shielding and potential medical applications. To this end, new ruthenium-catalyzed olefin metathesis routes have been devised to form new complex polyboranes and polymeric species. Metathesis of di-alkenyl substituted o-carboranes allowed the synthesis of ring-closed products fused to the carborane cage, many of which are new compounds and one that offers a superior synthetic method to one previously published. Acyclic diene metathesis of di-alkenyl substituted m-carboranes resulted in the formation of new main-chain carborane-containing polymers of modest molecular weights. Due to their extremely low char yields, and in order to explore other metathesis routes, ring opening metathesis polymerization (ROMP) was used to generate the first examples of poly(norbornenyl- o-carboranes). Monomer synthesis was achieved via a two-step process, incorporating Ti-catalyzed hydroboration to make 6-(5-norbornenyl)-decaborane, followed by alkyne insertion in ionic liquid media to achieve 1,2-R2 -3-norbornenyl o-carborane species. The monomers were then polymerized using ROMP to afford several examples of poly(norbornenyl- o-carboranes) with relatively high molecular weights. One such polymer, [1-Ph, 3-(=CH2-C5H7-CH2=)-1,2-C 2B10H10]n, had a char yield very close to the theoretical char yield of 44%. Upon random copolymerization with poly(6-(5-norbornenyl) decaborane), char yields significantly increased to 80%, but this number was well above the theoretical value implicating the formation of a boron-carbide/carbon ceramic. Finally, applications of polyboranes were explored via polymer blends toward the synthesis of ceramic composites and the use of polymer precursors as reagents for potential ultra high temperature ceramic applications. Upon pyrolysis, polymer blends of poly(6-(5-norbornenyl)-decaborane) and poly

  19. Synthesis of Mo and W carbide and nitride nanoparticles via a simple "urea glass" route.

    Science.gov (United States)

    Giordano, Cristina; Erpen, Christian; Yao, Weitang; Antonietti, Markus

    2008-12-01

    A simple, inexpensive, and versatile route for the synthesis of metal nitrides and carbides (such as Mo2N, Mo2C, W2N and WC) nanoparticles was set up. For the first time, metal carbides were obtained using urea as carbon-source. MoCl5 and WCl4 are in a first step contacted with alcohols and an appropriate amount of urea to form a polymer-like, glassy phase, which acts as the starting product for further conversions. Just by heating this phase it was possible to prepare either molybdenum and tungsten nitrides or carbides simply by changing the metal precursor/urea molar ratio. In this procedure, urea plays a double role as a nitrogen/carbon source and stabilizing agent (necessary for the nanoparticle dispersion). Molybdenum and tungsten nitride and carbides synthesized are almost pure and highly crystalline. Sizes estimated by WAXS range around 20 and 4 nm in diameter for Mo and W nitrides or carbides, respectively. The specific surface area was found between 10 and 80 m2/g, depending on the metal and the initial ratio of metal precursor to urea.

  20. Oxidation of Silicon and Boron in Boron Containing Molten Iron

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium-frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that silicon and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400 ℃. The favorable oxidation temperature of silicon was about 1 300-1 350 C. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.

  1. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  2. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  3. Crystalline and Crystalline International Disposal Activities

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, Hari S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, Timothy M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, Jeffrey De' Haven [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, Satish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, Nataliia [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, Paul William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-06

    This report presents the results of work conducted between September 2015 and July 2016 at Los Alamos National Laboratory in the crystalline disposal and crystalline international disposal work packages of the Used Fuel Disposition Campaign (UFDC) for DOE-NE’s Fuel Cycle Research and Development program. Los Alamos focused on two main activities during this period: Discrete fracture network (DFN) modeling to describe flow and radionuclide transport in complex fracture networks that are typical of crystalline rock environments, and a comprehensive interpretation of three different colloid-facilitated radionuclide transport experiments conducted in a fractured granodiorite at the Grimsel Test Site in Switzerland between 2002 and 2013. Chapter 1 presents the results of the DFN work and is divided into three main sections: (1) we show results of our recent study on the correlation between fracture size and fracture transmissivity (2) we present an analysis and visualization prototype using the concept of a flow topology graph for characterization of discrete fracture networks, and (3) we describe the Crystalline International work in support of the Swedish Task Force. Chapter 2 presents interpretation of the colloidfacilitated radionuclide transport experiments in the crystalline rock at the Grimsel Test Site.

  4. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; J. X. Zhong

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  5. Thermo-Mechanical Characterization of Silicon Carbide-Silicon Carbide Composites at Elevated Temperatures Using a Unique Combustion Facility

    Science.gov (United States)

    2009-09-10

    F THERMO-MECHANICAL CHARACTERIZATION OF SILICON CARBIDE - SILICON CARBIDE COMPOSITES AT ELEVATED...MECHANICAL CTERIZATION OF SILICON CARBIDE -SILIC BIDE COMPOSITES AT LEVATED TEMPER S USING A UNIQUE COMBUSTION FACILITY DISSERTATI N Ted T. Kim...THERMO-MECHANICAL CHARACTERIZATION OF SILICON CARBIDE - SILICON CARBIDE COMPOSITES AT ELEVATED TEMPERATURES USING A UNIQUE COMBUSTION FACILITY

  6. Crystalline Silica Primer

    Science.gov (United States)

    ,

    1992-01-01

    Crystalline silica is the scientific name for a group of minerals composed of silicon and oxygen. The term crystalline refers to the fact that the oxygen and silicon atoms are arranged in a threedimensional repeating pattern. This group of minerals has shaped human history since the beginning of civilization. From the sand used for making glass to the piezoelectric quartz crystals used in advanced communication systems, crystalline silica has been a part of our technological development. Crystalline silica's pervasiveness in our technology is matched only by its abundance in nature. It's found in samples from every geologic era and from every location around the globe. Scientists have known for decades that prolonged and excessive exposure to crystalline silica dust in mining environments can cause silicosis, a noncancerous lung disease. During the 1980's, studies were conducted that suggested that crystalline silica also was a carcinogen. As a result of these findings, crystalline silica has been regulated under the Occupational Safety and Health Administration's (OSHA) Hazard Communication Standard (HCS). Under HCS, OSHAregulated businesses that use materials containing 0.1% or more crystalline silica must follow Federal guidelines concerning hazard communication and worker training. Although the HCS does not require that samples be analyzed for crystalline silica, mineral suppliers or OSHAregulated

  7. [Calcium carbide of different crystal formation synthesized by calcium carbide residue].

    Science.gov (United States)

    Lu, Zhong-yuan; Kang, Ming; Jiang, Cai-rong; Tu, Ming-jing

    2006-04-01

    To recycle calcium carbide residue effectively, calcium carbide of different crystal form, including global aragonite, calcite and acicular calcium carbide was synthesized. Both the influence of pretreatment in the purity of calcium carbide, and the influence of temperatures of carbonization reaction, release velocity of carbon dioxide in the apparition of calcium carbide of different crystal form were studied with DTA-TG and SEM. The result shows that calcium carbide residue can take place chemistry reaction with ammonia chlorinate straight. Under the condition that pH was above 7, the purity of calcium carbide was above 97%, and the whiteness was above 98. Once provided the different temperatures of carbonization reaction and the proper release velocity of carbon dioxide, global aragonite, calcite and acicular calcium carbide were obtained.

  8. Growth Characteristics and Kinetics of Niobium Carbide Coating Obtained on AISI 52100 by Thermal-reactive Diffusion Technique

    Institute of Scientific and Technical Information of China (English)

    YAN Shaojin; WANG Hongfu; SUN Qikun; HE Peng; PANG Chengang; WANG Huachang; WANG Ailing

    2014-01-01

    Niobium carbide coating was produced by thermal-reactive diffusion technique on AISI 52100 steel in salt bath at 1 123 K, 1 173 K, and 1 223 K for 1, 2, 4, and 6 hours. The salt consisted of borax, sodium fluoride, boron carbide, and niobium pentoxide. The presence of NbC phase on the steel surface was confirmed by X-ray diffraction analysis. Microscopic observation showed that niobium carbide coating formed on the substrate was smooth and compact. There was a distinct and flat interface between the coating and substrate. The micro-hardness of niobium carbide coating was 2892±145HV. The thickness of coating ranged from 1.6μm to 14μm. The forming kinetics of niobium carbide coating was revealed. Moreover, a contour diagram derived from experimental data was graphed for correct selection of process parameters. Some mathematical equations were built for predicting the coating thickness with predetermined processing temperature and time. The results showed that these mathematical equations are very practical as well as the kinetics equation.

  9. Spark plasma sintering of tantalum carbide and graphene reinforced tantalum carbide composites

    Science.gov (United States)

    Kalluri, Ajith Kumar

    Tantalum carbide (TaC), an ultra-high temperature ceramic (UHTC), is well known for its exceptional properties such as high hardness (15-19 GPa), melting point (3950 °C), elastic modulus (537 GPa), chemical resistance, and thermal shock resistance. To make TaC to be the future material for hypersonic vehicles, it is required to improve its thermal conductivity, strength, and fracture toughness. Researchers have previously reinforced TaC ceramic with carbides of silicon and boron as well as carbon nanotubes (CNTs), however, these reinforcements either undergo chemical changes or induce defects in the matrix during processing. In addition, these reinforcements exhibit a very minimal improvement in the properties. In the present work, we attempted to improve TaC fracture toughness by reinforcing with graphene nano-platelets (GNPs) and processing through spark plasma sintering at high temperature of 2000 °C, pressure of 70 MPa, and soaking time of 10 min. In addition, we investigated the active densification mechanism during SPS of TaC powder and the effect of ball milling time on mechanical properties of sintered TaC. A relative density of >96% was achieved using SPS of monolithic TaC (<3 μm). Ball milling improved the sintering kinetics and improved the mechanical properties (microhardness, bi-axial flexural strength, and indentation fracture toughness). Activation energy (100 kJ/mol) and stress exponent (1.2) were obtained using the analytical model developed for power-law creep. Grain boundary sliding is proposed as active densification mechanism based on these calculations. Reinforcing GNPs (2-6 vol.% ) in the TaC matrix improved relative density (99.8% for TaC-6 vol.% GNP). Also ˜150% and ˜180% increase in flexural strength and fracture toughness, respectively, was observed for TaC-6 vol.% GNP composite. The significant improvement in these properties is attributed to improved densification and toughening mechanisms such as sheet pull-out and crack

  10. Investigation of Infiltrated and Sintered Titanium Carbide

    Science.gov (United States)

    1952-04-01

    taneive investigations in this field during the ’time preceding this contract, and concentrated their effort® On titanium carbide as the’ refractospy...component • The Basic work of this investigation consisted of? X, KpälfiCÄVtloh and refinement of cOmätrcial grades of titanium carbide hj...facilitate a comparison between the different methods» an investigation was then carried out with composite bodies* consisting of titanium carbide asd

  11. Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Fa-Jun, E-mail: Fajun.Ma@nus.edu.sg; Duttagupta, Shubham [Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore); Shetty, Kishan Devappa; Meng, Lei; Hoex, Bram; Peters, Ian Marius [Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore); Samudra, Ganesh S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore); Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore)

    2014-11-14

    Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed.

  12. Silicon carbide fibers and articles including same

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  13. Methods for producing silicon carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  14. Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.

    Science.gov (United States)

    Quesada-González, Miguel; Boscher, Nicolas D; Carmalt, Claire J; Parkin, Ivan P

    2016-09-28

    The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

  15. Boronization and Carburization of Superplastic Stainless Steel and Titanium-Based Alloys

    Directory of Open Access Journals (Sweden)

    Masafumi Matsushita

    2011-07-01

    Full Text Available Bronization and carburization of fine-grain superplastic stainless steel is reviewed, and new experimental results for fine grain Ti88.5Al4.5V3Fe2Mo2 are reported. In superplastic duplex stainless steel, the diffusion of carbon and boron is faster than in non-superplastic duplex stainless steel. Further, diffusion is activated by uniaxial compressive stress. Moreover, non-superplastic duplex stainless steel shows typical grain boundary diffusion; however, inner grain diffusion is confirmed in superplastic stainless steel. The presence of Fe and Cr carbides or borides is confirmed by X-ray diffraction, which indicates that the diffused carbon and boron react with the Fe and Cr in superplastic stainless steel. The Vickers hardness of the carburized and boronized layers is similar to that achieved with other surface treatments such as electro-deposition. Diffusion of boron into the superplastic Ti88.5Al4.5V3Fe2Mo2 alloy was investigated. The hardness of the surface exposed to boron powder can be increased by annealing above the superplastic temperature. However, the Vickers hardness is lower than that of Ti boride.

  16. Development of particle induced gamma-ray emission methods for nondestructive determination of isotopic composition of boron and its total concentration in natural and enriched samples.

    Science.gov (United States)

    Chhillar, Sumit; Acharya, Raghunath; Sodaye, Suparna; Pujari, Pradeep K

    2014-11-18

    We report simple particle induced gamma-ray emission (PIGE) methods using a 4 MeV proton beam for simultaneous and nondestructive determination of the isotopic composition of boron ((10)B/(11)B atom ratio) and total boron concentrations in various solid samples with natural isotopic composition and enriched with (10)B. It involves measurement of prompt gamma-rays at 429, 718, and 2125 keV from (10)B(p,αγ)(7)Be, (10)B(p, p'γ)(10)B, and (11)B(p, p'γ)(11)B reactions, respectively. The isotopic composition of boron in natural and enriched samples was determined by comparing peak area ratios corresponding to (10)B and (11)B of samples to natural boric acid standard. An in situ current normalized PIGE method, using F or Al, was standardized for total B concentration determination. The methods were validated by analyzing stoichiometric boron compounds and applied to samples such as boron carbide, boric acid, carborane, and borosilicate glass. Isotopic compositions of boron in the range of 0.247-2.0 corresponding to (10)B in the range of 19.8-67.0 atom % and total B concentrations in the range of 5-78 wt % were determined. It has been demonstrated that PIGE offers a simple and alternate method for total boron as well as isotopic composition determination in boron based solid samples, including neutron absorbers that are important in nuclear technology.

  17. Tribology of carbide derived carbon films synthesized on tungsten carbide

    Science.gov (United States)

    Tlustochowicz, Marcin

    Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

  18. Boron isotopic compositions of some boron minerals

    Energy Technology Data Exchange (ETDEWEB)

    Oi, Takao; Musashi, Masaaki; Ossaka, Tomoko; Kakihana, Hidetake (Sophia Univ., Tokyo (Japan)); Nomura, Masao; Okamoto, Makoto (Tokyo Institute of Technology (Japan))

    1989-12-01

    Boron minerals that have different structural formulae but are supposed to have the same geologic origin have been collected and analyzed for the {sup 11}B/{sup 10}B isotopic ratio. It has been reconfirmed that minerals of marine origin have higher {sup 11}B/{sup 10}B ratios than those of nonmarine origin. It has been found that the sequence of decreasing {sup 11}B/{sup 10}B values among the minerals with the same geologic origin is; borax, tincal, kernite (Na borates) > ulexite (Na/Ca borate) > colemanite, iyoite, meyerhofferite (Ca borates). This sequence is explainable on the basis of the difference in crystal structure among the minerals. That is, minerals with high BO{sub 3}/BO{sub 4} ratios, (the ratio of the number of the BO{sub 3} triangle units to the number of the BO{sub 4} tetrahedron units in the structural formula of a mineral) have higher {sup 11}B/{sup 10}B ratios.

  19. Boron supplementation in broiler diets

    Directory of Open Access Journals (Sweden)

    EJ Fassani

    2004-12-01

    Full Text Available Boron supplementation in broiler feed is not a routine practice. However, some reports suggest a positive effect of boron on performance. This study assessed the effects of boron supplementation on broiler performance. Diets were based on maize and soybean meal, using boric acid P.A. as boron source. Six supplementation levels (0, 30, 60, 90, 120 and 150 ppm were evaluated using 1,440 one-day old males housed at a density of 30 chickens in each of 48 experimental plots of 3m². A completely randomized block design was used with 8 replicates. Feed intake, weight gain and feed conversion were assessed in the periods from 1 to 7 days, 1 to 21 days and 1 to 42 days of age, and viability was evaluated for the total 42-day rearing period. No performance variable was affected by boron supplementation (p>0.05 in the period from 1 to 7 days. The regression analysis indicated an ideal level of 37.4 ppm of boron for weight gain from 1 to 21 days (p0.05, although feed intake was reduced linearly with increased boron levels (p0.05. Ash and calcium percentages in the tibias of broilers and viability in the total rearing period were not affected by boron supplementation (p>0.05.

  20. XPS, SIMS and FTIR-ATR characterization of boronized graphite from the thermonuclear plasma device RFX-mod

    Science.gov (United States)

    Ghezzi, F.; Laguardia, L.; Caniello, R.; Canton, A.; Dal Bello, S.; Rais, B.; Anderle, M.

    2015-11-01

    In this paper the characterization of a thin (tens of nanometers) boron layer on fine grain polycrystalline graphite substrate is presented. The boron film is used as conditioning technique for the full graphite wall of the Reversed Field eXperiment-modified (RFX-mod) experiment, a device for the magnetic confinement of plasmas of thermonuclear interest. Aim of the present analysis is to enlighten the chemical structure of the film, the trapping mechanism that makes it a getter for oxygen and hydrogen and the reason of its loss of effectiveness after exposure to about 100 s of hydrogen plasma. X-ray Photoelectron Spectroscopy (XPS), Secondary Ions Mass Spectrometry (SIMS) and Fourier Transform Infra Red spectroscopy in combination with the Attenuated Total Reflectance (FTIR-ATR) were used to obtain the structure and the chemical composition of graphitic samples as coated or coated and subsequently exposed to hydrogen plasma after boron deposition. The boron layers on the only coated samples were found to be amorphous hydrogenated boron carbide plus a variety of bonds like B-B, B-H, B-O, B-OH, C-C, C-H, C-O, C-OH. Both the thickness and the homogeneity of the layers were found to depend on the distance of the sample from the anode during the deposition. The samples contained oxygen along the layer thickness, at level of 5%, bound to boron. The gettering action of the boron is therefore already active during the deposition itself. The exposure to plasma caused erosion of the boron film and higher content of H and O bound to boron throughout the whole thickness. The interaction of the B layer with plasma is therefore a bulk phenomenon.

  1. Synthesis of silicon carbide thin films with polycarbosilane (PCS)

    Energy Technology Data Exchange (ETDEWEB)

    Colombo, P. [Univ. di Padova (Italy). Dept. di Ingegneria Meccanica-Settore Materiali; Paulson, T.E.; Pantano, C.G. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering

    1997-09-01

    Polycarbosilane (PCS) thin films were deposited on silicon (and other) substrates and heat treated under vacuum ({approximately}10{sup {minus}6} torr) at temperatures in the range of 200--1,200 C. At temperatures in the range of 1,000--1,200 C, the initially amorphous PCS films transformed to polycrystalline {beta}-silicon carbide ({beta}-SiC). Although PCS films could be deposited at thickness up to 2 {micro}m, the films with thicknesses >1 {micro}m could not be transformed to SiC without extensive cracking. The resulting SiC coatings were characterized using Fourier transform infrared spectroscopy, glancing-angle X-ray diffractometry, secondary-ion mass spectroscopy, Raman spectroscopy, transmission electron microscopy, and scanning electron microscopy. The temperature and time dependence of the amorphous-to-crystalline transition could be associated with the evolution of free carbon, oxygen, and hydrogen in the films.

  2. Pulsed laser ablation and deposition of niobium carbide

    Energy Technology Data Exchange (ETDEWEB)

    Sansone, M.; De Bonis, A. [Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza (Italy); Santagata, A. [Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, UOS Tito Scalo, C.da Santa Loja, 85010 Tito, PZ (Italy); Rau, J.V. [Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Via del Fosso del Cavaliere, 100, 00133 Rome (Italy); Galasso, A. [Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza (Italy); Teghil, R., E-mail: roberto.teghil@unibas.it [Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza (Italy)

    2016-06-30

    Highlights: • We have deposited in vacuum niobium carbide films by fs and ns PLD. • We have compared PLD performed by ultra-short and short laser pulses. • The films deposited by fs PLD of NbC are formed by nanoparticles. • The structure of the films produced by fs PLD at 500 °C corresponds to NbC. - Abstract: NbC crystalline films have been deposited in vacuum by ultra-short pulsed laser deposition technique. The films have been characterized by transmission and scanning electron microscopies and by X-ray diffraction. To clarify the ablation–deposition mechanism, the plasma produced by the ablation process has been characterized by optical emission spectroscopy and fast imaging. A comparison of the results with those obtained by ns pulsed deposition of the same target has been carried out.

  3. Titanium Carbide Bipolar Plate for Electrochemical Devices

    Energy Technology Data Exchange (ETDEWEB)

    LaConti, Anthony B.; Griffith, Arthur E.; Cropley, Cecelia C.; Kosek, John A.

    1998-05-08

    Titanium carbide comprises a corrosion resistant, electrically conductive, non-porous bipolar plate for use in an electrochemical device. The process involves blending titanium carbide powder with a suitable binder material, and molding the mixture, at an elevated temperature and pressure.

  4. Hydroxide catalysis bonding of silicon carbide

    NARCIS (Netherlands)

    Veggel, A.A. van; Ende, D.A. van den; Bogenstahl, J.; Rowan, S.; Cunningham, W.; Gubbels, G.H.M.; Nijmeijer, H.

    2008-01-01

    For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information: D.Whiteford@admin.gla.ac.uk]. This techn

  5. Ligand sphere conversions in terminal carbide complexes

    DEFF Research Database (Denmark)

    Morsing, Thorbjørn Juul; Reinholdt, Anders; Sauer, Stephan P. A.

    2016-01-01

    Metathesis is introduced as a preparative route to terminal carbide complexes. The chloride ligands of the terminal carbide complex [RuC(Cl)2(PCy3)2] (RuC) can be exchanged, paving the way for a systematic variation of the ligand sphere. A series of substituted complexes, including the first exam...

  6. Process for making silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salavatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    1998-01-01

    A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  7. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  8. Chronic boron exposure and human semen parameters.

    Science.gov (United States)

    Robbins, Wendie A; Xun, Lin; Jia, Juan; Kennedy, Nola; Elashoff, David A; Ping, Liu

    2010-04-01

    Boron found as borates in soil, food, and water has important industrial and medical applications. A panel reviewing NTP reproductive toxicants identified boric acid as high priority for occupational studies to determine safe versus adverse reproductive effects. To address this, we collected boron exposure/dose measures in workplace inhalable dust, dietary food/fluids, blood, semen, and urine from boron workers and two comparison worker groups (n=192) over three months and determined correlations between boron and semen parameters (total sperm count, sperm concentration, motility, morphology, DNA breakage, apoptosis and aneuploidy). Blood boron averaged 499.2 ppb for boron workers, 96.1 and 47.9 ppb for workers from high and low environmental boron areas (pBoron concentrated in seminal fluid. No significant correlations were found between blood or urine boron and adverse semen parameters. Exposures did not reach those causing adverse effects published in animal toxicology work but exceeded those previously published for boron occupational groups.

  9. Synthesis of silicon carbide from cokes rice hulls and coked bamboos; Shirasu to momigaratan chikutan kara SiC no gosei

    Energy Technology Data Exchange (ETDEWEB)

    Tateyama, H.; Kimura, K.; Jinnai, K. [Kyushu National Industrial Research Institute, Sagas (Japan); Hamasaki, H.

    1995-07-25

    Silicon carbide is an important industrial material as used for high-temperature ceramics. In the pre-sent study silicon carbide powders were synthesized at different temperature (1,250-1,400{degree}C) by reaction of a mixed power of shirasu and caked rice hulls or caked bamboos. The results are summarized as follows; (1) Two kinds of shirasu are used as the source of SiO2, one mainly consists of volcanic glass and the other includes volcanic glass and crystalline materials, such as feldspar and quartz. Coked rice hulls contain large amounts of unburnt component, but caked bamboos include a very small amount of one. (2) Pure powders of silicon carbide are synthesized from shirasu and caked bamboos under relatively low temperature as compared with synthetic conditions of {beta}-silicon carbide on the market. (3) The structural and quantitative analyses of the synthesized silicon carbide were carried out using the X-ray powder diffraction refinement method on the basis of the cubic and hexagonal close packed models. The profile calculated on the basis of Paterson model shows that the peak of (102) reflection moves toward the lower angle with increasing the amount of stacking faults, however, in the case of t Wilson model the peak position of (102) reflection does not move any more with increasing the stacking faults. The content of the stacking faults in the present synthesized silicon carbide is very small as compared with that of silicon carbide on the sail. 5 refs., 10 figs.

  10. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents.

  11. Precipitating Mechanism of Carbide in Cold-Welding Surfacing Metals

    Institute of Scientific and Technical Information of China (English)

    Yuanbin ZHANG; Dengyi REN

    2004-01-01

    Carbides in a series of cold-welding weld metals were studied by means of SEM, TEM and EPMA, and the forming mechanism of carbide was proposed according to their distribution and morphology. Due to their different carbide-forming tendency, Nb and Ti could combine with C to form particulate carbide in liquid weld metal and depleted the carbon content in matrix, while V induced the carbide precipitated along grain boundary. But too much Nb or Ti alone resulted in coarse carbide and poor strengthened matrix. When suitable amount of Nb, Ti and V coexisted in weld metal, both uniformly distributed particulate carbide and well strengthened matrix could be achieved. It was proposed that the carbide nucleated on the oxide which dispersed in liquid weld metal, and then grew into multi-layer complex carbide particles by epitaxial growth. At different sites, carbide particles may present as different morphologies.

  12. The human crystallin gene families

    Directory of Open Access Journals (Sweden)

    Wistow Graeme

    2012-12-01

    Full Text Available Abstract Crystallins are the abundant, long-lived proteins of the eye lens. The major human crystallins belong to two different superfamilies: the small heat-shock proteins (α-crystallins and the βγ-crystallins. During evolution, other proteins have sometimes been recruited as crystallins to modify the properties of the lens. In the developing human lens, the enzyme betaine-homocysteine methyltransferase serves such a role. Evolutionary modification has also resulted in loss of expression of some human crystallin genes or of specific splice forms. Crystallin organization is essential for lens transparency and mutations; even minor changes to surface residues can cause cataract and loss of vision.

  13. Formation of nanoscale titanium carbides in ferrite: an atomic study

    Science.gov (United States)

    Lv, Yanan; Hodgson, Peter; Kong, Lingxue; Gao, Weimin

    2016-03-01

    The formation and evolution of nanoscale titanium carbide in ferrite during the early isothermal annealing process were investigated via molecular dynamics simulation. The atomic interactions of titanium and carbon atoms during the initial formation process explained the atoms aggregation and carbides formation. It was found that the aggregation and dissociation of titanium carbide occurred simultaneously, and the composition of carbide clusters varied in a wide range. A mechanism for the formation of titanium carbide clusters in ferrite was disclosed.

  14. Nothing Boring About Boron

    Science.gov (United States)

    Pizzorno, Lara

    2015-01-01

    The trace mineral boron is a micronutrient with diverse and vitally important roles in metabolism that render it necessary for plant, animal, and human health, and as recent research suggests, possibly for the evolution of life on Earth. As the current article shows, boron has been proven to be an important trace mineral because it (1) is essential for the growth and maintenance of bone; (2) greatly improves wound healing; (3) beneficially impacts the body’s use of estrogen, testosterone, and vitamin D; (4) boosts magnesium absorption; (5) reduces levels of inflammatory biomarkers, such as high-sensitivity C-reactive protein (hs-CRP) and tumor necrosis factor α (TNF-α); (6) raises levels of antioxidant enzymes, such as superoxide dismutase (SOD), catalase, and glutathione peroxidase; (7) protects against pesticide-induced oxidative stress and heavy-metal toxicity; (8) improves the brains electrical activity, cognitive performance, and short-term memory for elders; (9) influences the formation and activity of key biomolecules, such as S-adenosyl methionine (SAM-e) and nicotinamide adenine dinucleotide (NAD+); (10) has demonstrated preventive and therapeutic effects in a number of cancers, such as prostate, cervical, and lung cancers, and multiple and non-Hodgkin’s lymphoma; and (11) may help ameliorate the adverse effects of traditional chemotherapeutic agents. In none of the numerous studies conducted to date, however, do boron’s beneficial effects appear at intakes > 3 mg/d. No estimated average requirements (EARs) or dietary reference intakes (DRIs) have been set for boron—only an upper intake level (UL) of 20 mg/d for individuals aged ≥ 18 y. The absence of studies showing harm in conjunction with the substantial number of articles showing benefits support the consideration of boron supplementation of 3 mg/d for any individual who is consuming a diet lacking in fruits and vegetables or who is at risk for or has osteopenia; osteoporosis

  15. Characterization of Nanometric-Sized Carbides Formed During Tempering of Carbide-Steel Cermets

    OpenAIRE

    Matus K.; Pawlyta M.; Matula G.; Gołombek K.

    2016-01-01

    The aim of this article of this paper is to present issues related to characterization of nanometric-sized carbides, nitrides and/or carbonitrides formed during tempering of carbide-steel cermets. Closer examination of those materials is important because of hardness growth of carbide-steel cermet after tempering. The results obtained during research show that the upswing of hardness is significantly higher than for high-speed steels. Another interesting fact is the displacement of secondary ...

  16. Engineering design feasibility of low boron concentration core in PWR

    Energy Technology Data Exchange (ETDEWEB)

    Daing, A. T.; Kim, M. H. [Kyung Hee University, Yongin-shi, Gyeonggi-do, 446-701 Republic of Korea (Korea, Republic of); Woo, I.; Shon, S. R., E-mail: atdaing@khu.ac.k [Korea Nuclear Fuel, 1047 Daedukdaero, Yuseong-gu, Daejeon, 305-353 Republic of Korea (Korea, Republic of)

    2010-10-15

    In pressurized water reactor operation, higher level of soluble boron concentration could contribute higher impact from boron dilution situations, higher amount of liquid waste, and higher radiation dose to operators from higher corrosion potential to cladding and structure. Two practical and feasible means to reduce the maximum boron concentration were investigated in this study. A technically straightforward, possible means, can be achieved either by implementation of enriched boric acid (Eba) or by increasing more shim rod (fixed burnable absorber) worth. A simplest option is that the Eba is applied into reference core (Ref) design, OPR-1000 design, Ulchin unit-5 by allowing use of same fuel assemblies and core design without changing any nuclear design methodology used in that Ref design. Although results of Eba option proved its favorable power distribution and peaking factor, its moderator temperature coefficient (MTC) value reached positive, 3.25 pcm/ C at 40 EFPD which is beyond the design safety limit. An alternative option with more shim rods in fuel assemblies was tried with four types of integral burnable absorbers: gadolinia, integral fuel burnable absorber (Ifba), erbium and alumina boron carbide. Four core design candidates have been developed by keeping major engineering designs and preserving equivalent fuel enrichment level used in Ref design. However, all optimal designs were targeted to achieve comparable discharge burnup as well as favorable design safety parameters. The comparative analysis between Ref and optimal core designs is presented here. One of them is suggested as the most promising and favorable low boron core (Lbc) design in this framework. The proper combination of axial and radial enrichment zoning pattern in Lbc design candidate with Ifba-bearing fuel assemblies at equilibrium cycle, could bring 2 times narrower axial offset variation than that of Ref design, and maintain acceptable power peaking factor around 23% lower than

  17. Mass production of beta-silicon carbide nanofibers by the novel method of Forcespinning

    Science.gov (United States)

    Salinas, Alfonso

    Non-oxide Ceramics such as silicon carbide have very unique properties, for example high toughness, thermal stability, wear resistant, and thermal shock resistance these properties make these ceramic fibers excellent for high temperature applications. Here we present the development of Silicon Carbide nanofibers utilizing a Polystyrene/Polycarbomethylsilane solution as the precursor materials. The ForcespinningRTM was performed under a controlled nitrogen environment to prevent fiber oxidation. Characterization was conducted using scanning electron microscopy, x-ray diffraction, and thermogravimetric analysis. The results show successful formation of high yield, long continuous bead-free nanofibers with diameters ranging from 280nm to 2 micron depending on the selected processing parameters. The sintered precursors show formation of SiC nanofibers with a beta phase crystalline structure and oxygen content below 15%.

  18. Laser synthesis of silicon carbide powders from silane and hydrocarbon mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Cauchetier, M.; Croix, O.; Luce, M. (CEN Saclay, Gis sur Yvette (France))

    1988-11-01

    Ultrafine silicon carbide powders have been synthesized from mixtures of silane and hydrocarbons (with one to four carbon atoms) irradiated with an unfocused, high-power (1 kW), continuous-wave industrial CO{sub 2} laser. The chemistry of the reaction has been determined by analysis of the gaseous phase, either by infrared spectroscopy or by combined-gas chromatography-mass spectrometry; reaction yields have been determined. A silicon carbide production rate of 30 g/h with a yield > 99% was obtained from silane and acetylene mixtures with a 600-W laser power. An attempt to approach a production rate of 100 g/h at laboratory scale has been successful. Powder characteristics, such as particle size (10 to 50 nm), crystallinity, and stoichiometry can be controlled through optimization of laser intensity, gas pressure, and flow rate. The powders consist of equiaxed particles which exhibit a narrow size distribution.

  19. Magnetically Induced Continuous CO2 Hydrogenation Using Composite Iron Carbide Nanoparticles of Exceptionally High Heating Power.

    Science.gov (United States)

    Bordet, Alexis; Lacroix, Lise-Marie; Fazzini, Pier-Francesco; Carrey, Julian; Soulantica, Katerina; Chaudret, Bruno

    2016-12-19

    The use of magnetic nanoparticles to convert electromagnetic energy into heat is known to be a key strategy for numerous biomedical applications but is also an approach of growing interest in the field of catalysis. The heating efficiency of magnetic nanoparticles is limited by the poor magnetic properties of most of them. Here we show that the new generation of iron carbide nanoparticles of controlled size and with over 80 % crystalline Fe2.2 C leads to exceptional heating properties, which are much better than the heating properties of currently available nanoparticles. Associated to catalytic metals (Ni, Ru), iron carbide nanoparticles submitted to magnetic excitation very efficiently catalyze CO2 hydrogenation in a dedicated continuous-flow reactor. Hence, we demonstrate that the concept of magnetically induced heterogeneous catalysis can be successfully applied to methanation of CO2 and represents an approach of strategic interest in the context of intermittent energy storage and CO2 recovery.

  20. Densification studies of silicon carbide-based ceramics with yttria, silica and alumina as sintering additives

    Directory of Open Access Journals (Sweden)

    J. Marchi

    2001-10-01

    Full Text Available Silicon carbide has been extensively used in structural applications, especially at high temperatures. In this work, Y2O3, Al2O3 and SiO2 were added to beta-SiC in order to obtain highly dense ceramics. Sintering was conducted in a dilatometer and in a graphite resistance furnace and the densification behaviour was studied. Sintered samples were characterised by density measurements, the crystalline phases were identified by X-ray diffraction. Microstructural observation of polished and polished/etched samples was carried out with help of scanning electron microscopy. Silicon carbide ceramics with more than 90% of the theoretical density were obtained by pressureless sintering if a suitable proportion of the additives is used.