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Sample records for crystal line defect

  1. Thermal analysis of line-defect photonic crystal lasers

    DEFF Research Database (Denmark)

    Xue, Weiqi; Ottaviano, Luisa; Chen, Yaohui

    2015-01-01

    We report a systematic study of thermal effects in photonic crystal membrane lasers based on line-defect cavities. Two material platforms, InGaAsP and InP, are investigated experimentally and numerically. Lasers with quantum dot layers embedded in an InP membrane exhibit lasing at room temperatur...

  2. Band gap control in a line-defect magnonic crystal waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Morozova, M. A., E-mail: mamorozovama@yandex.ru; Grishin, S. V.; Sadovnikov, A. V.; Romanenko, D. V.; Sharaevskii, Yu. P.; Nikitov, S. A. [Laboratory ' Metamaterials,' Saratov State University, Astrakhanskaya 83, Saratov 410012 (Russian Federation)

    2015-12-14

    We report on the experimental observation of the spin wave spectrum control in a line-defect magnonic crystal (MC) waveguide. We demonstrate the possibility to control the forbidden frequency band (band gap) for spin waves tuning the line-defect width. In particular, this frequency may be greater or lower than the one of 1D MC waveguide without line-defect. By means of space-resolved Brillouin light scattering technique, we study the localization of magnetization amplitude in the line-defect area. We show that the length of this localization region depends on the line-defect width. These results agree well with theoretical calculations of spin wave spectrum using the proposed model of two coupled magnonic crystal waveguides. The proposed simple geometry of MC with line-defect can be used as a logic and multiplexing block for application in the novel field of magnonic devices.

  3. Holographic Fabrication of Designed Functional Defect Lines in Photonic Crystal Lattice Using a Spatial Light Modulator

    Directory of Open Access Journals (Sweden)

    Jeffrey Lutkenhaus

    2016-04-01

    Full Text Available We report the holographic fabrication of designed defect lines in photonic crystal lattices through phase engineering using a spatial light modulator (SLM. The diffracted beams from the SLM not only carry the defect’s content but also the defect related phase-shifting information. The phase-shifting induced lattice shifting in photonic lattices around the defects in three-beam interference is less than the one produced by five-beam interference due to the alternating shifting in lattice in three beam interference. By designing the defect line at a 45 degree orientation and using three-beam interference, the defect orientation can be aligned with the background photonic lattice, and the shifting is only in one side of the defect line, in agreement with the theory. Finally, a new design for the integration of functional defect lines in a background phase pattern reduces the relative phase shift of the defect and utilizes the different diffraction efficiency between the defect line and background phase pattern. We demonstrate that the desired and functional defect lattice can be registered into the background lattice through the direct imaging of designed phase patterns.

  4. Tunable band-notched line-defect waveguide in a surface-wave photonic crystal

    CERN Document Server

    Gao, Zhen; Zhang, Youming; Xu, Hongyi; Zhang, Baile

    2016-01-01

    We propose and experimentally demonstrate a tunable band-notched line-defect waveguide in a surface-wave photonic crystal, which consists of a straight line-defect waveguide and side-coupled defect cavities. A tunable narrow stopband can be observed in the broadband transmission spectra. We also demonstrate that both the filtering levels and filtering frequencies of the band-notched line-defect waveguide can be conveniently tuned through changing the total number and the pillar height of the side-coupled defect cavities. The band-notch function is based on the idea that the propagating surface modes with the resonance frequencies of the side-coupled defect cavities will be tightly localized around the defect sites, being filtered from the waveguide output. Transmission spectra measurements and direct near-field profiles imaging are performed at microwave frequencies to verify our idea and design. These results may enable new band-notched devices design and provide routes for the realization of tunable surface...

  5. Structure Tuning of Line-Defect Waveguides Based on Silicon-on-Insulator Photonic Crystal Slabs

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Xia; XU Xing-Sheng; XIONG Gui-Guang; HU Hai-Yang; SONG Qian; DU Wei; CHEN Hong-Da

    2007-01-01

    We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 μm into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510 nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

  6. Colloidal nanoparticles trapped by liquid-crystal defect lines: A lattice Monte Carlo simulation

    Science.gov (United States)

    Jose, Regina; Skačej, Gregor; Sastry, V. S. S.; Žumer, Slobodan

    2014-09-01

    Lattice-based Monte Carlo simulations are performed to study a confined liquid crystal system with a topological disclination line entangling a colloidal nanoparticle. In our microscopic study the disclination line is stretched by moving the colloid, as in laser tweezing experiments, which results in a restoring force attempting to minimize the disclination length. From constant-force simulations we extract the corresponding disclination line tension, estimated as ˜50 pN, and observe its decrease with increasing temperature.

  7. Line defects on photonic crystals for the design of all-optical power splitters and digital logic gates

    Science.gov (United States)

    Saghaei, Hamed; Zahedi, Abdulhamid; Karimzadeh, Rouhollah; Parandin, Fariborz

    2017-10-01

    In this paper, a triangular two-dimensional photonic crystal (PhC) of silicon rods in air is presented and its photonic band diagram is calculated by plane wave method. In this structure, an optical waveguide is obtained by creating a line defect (eliminating rods) in diagonal direction of PhC. Numerical simulations based on finite difference time domain method show that when self-collimated beams undergo total internal reflection at the PhC-air interface, a total reflection of 90° occurs for the output beams. We also demonstrate that by decreasing the radius of silicon rods instead of eliminating a diagonal line, a two-channel optical splitter will be designed. In this case, incoming self-collimated beams can be divided into the reflected and transmitted beams with arbitrary power ratio by adjusting the value of their radii. Based on these results, we propose a four-channel optical splitter using four line defects. The power ratio among output channels can be controlled systematically by varying the radius of rods in the line defects. We also demonstrate that by launching two optical sources with the same intensity and 90° phase difference from both perpendicular faces of the PhC, two logic OR and XOR gates will be achieved at the output channels. These optical devices have some applications in photonic integrated circuits for controlling and steering (managing) the light as desired.

  8. Experimental investigation of energy localization in line-defect resonator based on silicon locally resonant phononic crystal

    Science.gov (United States)

    Jiang, Wanli; Feng, Duan; Xu, Dehui; Xiong, Bin; Wang, Yuelin

    2016-10-01

    In this paper, energy localization in line-defect resonator based on locally resonant phononic crystal (PnC) is experimentally studied. The defected resonator is realized by creating line defects on a two-dimension (2-D) silicon PnC. The silicon resonator was fabricated by micro machining process and tested by a combination of the fluid coupling method and Laser Doppler Vibrometer (LDV). Acoustic waves with frequency range from 7.19 MHz to 7.50 MHz are trapped in the cavity, and the corresponding resonant modes are observed in-situ. The measured quality (Q) factor of the resonator, which is 427 at its resonant frequency of 7.3 MHz, is smaller than the simulated ones (666 and 5135). The experimental results agree well with the simulation results that frequencies of the trapped acoustic waves of are mostly in the range of the phononic bandgaps. The locally resonant based PnC resonator in paper with 17 dB magnitude amplification, which is normalized with respect to the transmission of a freestanding silicon slab in the same frequency range, has great potential in energy harvesting or sound concentration.

  9. Calculating charged defects using CRYSTAL

    Science.gov (United States)

    Bailey, Christine L.; Liborio, Leandro; Mallia, Giuseppe; Tomić, Stanko; Harrison, Nicholas M.

    2010-07-01

    The methodology for the calculation of charged defects using the CRYSTAL program is discussed. Two example calculations are used to illustrate the methodology: He+ ions in a vacuum and two intrinsic charged defects, Cu vacancies and Ga substitution for Cu, in the chalcopyrite CuGaS2.

  10. Irradiation Defects in Silicon Crystal

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

  11. Stable line defects in silicene

    Science.gov (United States)

    Ghosh, Dibyajyoti; Parida, Prakash; Pati, Swapan K.

    2015-11-01

    Line defects in two-dimensional (2D) materials greatly modulate various properties of their pristine form. Using ab initio molecular dynamics (AIMD) simulations, we investigate the structural reconstructions of different kinds of grain boundaries in the silicene sheets. It is evident that depending upon the presence of silicon adatoms and edge shape of grain boundaries (i.e., armchair or zigzag), stable extended line defects (ELDs) can be introduced in a controlled way. Further studies show the stability of these line-defects in silicene, grown on Ag(111) surface at room-temperature. Importantly, unlike most of the 2D sheet materials such as graphene and hexagonal boron nitride, 5-5-8 line defects modify the nonmagnetic semimetallic pristine silicene sheet to spin-polarized metal. As ferromagnetically ordered magnetic moments remain strongly localized at the line defect, a one-dimensional spin channel gets created in silicene. Interestingly, these spin channels are quite stable because, unlike the edge of nanoribbons, structural reconstruction or contamination cannot destroy the ordering of magnetic moments here. Zigzag silicene nanoribbons with a 5-5-8 line defect also exhibit various interesting electronic and magnetic properties depending upon their width as well as the nature of the magnetic coupling between edge and defect spin states. Upon incorporation of other ELDs, such as 4-4-4 and 4-8 defects, 2D sheets and nanoribbons of silicene show a nonmagnetic metallic or semiconducting ground state. Highlighting the controlled formation of ELDs and consequent emergence of technologically important properties in silicene, we propose new routes to realize silicene-based nanoelectronic and spintronic devices.

  12. Photonic crystals with topological defects

    Science.gov (United States)

    Liew, Seng Fatt; Knitter, Sebastian; Xiong, Wen; Cao, Hui

    2015-02-01

    We introduce topological defects to a square lattice of elliptical cylinders. Despite the broken translational symmetry, the long-range positional order of the cylinders leads to a residual photonic band gap in the local density of optical states. However, the band-edge modes are strongly modified by the spatial variation of the ellipse orientation. The Γ -X band-edge mode splits into four regions of high intensity and the output flux becomes asymmetric due to the formation of crystalline domains with different orientation. The Γ -M band-edge mode has the energy flux circulating around the topological defect center, creating an optical vortex. By removing the elliptical cylinders at the center, we create localized defect states, which are dominated by either clockwise or counterclockwise circulating waves. The flow direction can be switched by changing the ellipse orientation. The deterministic aperiodic variation of the unit cell orientation adds another dimension to the control of light in photonic crystals, enabling the creation of a diversified field pattern and energy flow landscape.

  13. Topological defects in two-dimensional crystals

    OpenAIRE

    Chen, Yong; Qi, Wei-Kai

    2008-01-01

    By using topological current theory, we study the inner topological structure of the topological defects in two-dimensional (2D) crystal. We find that there are two elementary point defects topological current in two-dimensional crystal, one for dislocations and the other for disclinations. The topological quantization and evolution of topological defects in two-dimensional crystals are discussed. Finally, We compare our theory with Brownian-dynamics simulations in 2D Yukawa systems.

  14. Defect structures in liquid crystals bounded by microwrinkles

    Science.gov (United States)

    Ohzono, Takuya

    2013-09-01

    Spatially confined liquid crystals (LCs) exhibit non-uniform alignment, often accompanied by self-organized topological defects of non-trivial shape in response to imposed boundary conditions and geometry. Here we show that a nematic LC, when confined in a sinusoidal microwrinkle groove, exhibits a new periodic arrangement of twist deformations and a zigzag line defect. This periodic ordering results from the inherent LC elastic anisotropy and the antagonistic boundary conditions at the top flat LC and the curved LC-groove interfaces. The effect of the LC thickness on the stability of the line defect is also shown.

  15. Topological Defects in Liquid Crystal Films

    Institute of Scientific and Technical Information of China (English)

    DUAN Yi-Shi; ZHAO Li; ZHANG Xin-Hui; SI Tie-Yan

    2007-01-01

    A topological theory of liquid crystal films in the presence of defects is developed based on the φ-mapping topological current theory. By generalizing the free-energy density in "one-constant" approximation, a covariant freeenergy density is obtained, from which the U(1) gauge field and the unified topological current for monopoles and strings in liquid crystals are derived. The inner topological structure of these topological defects is characterized by the winding numbers of φ-mapping.

  16. Growth and defects of explosives crystals

    Science.gov (United States)

    Cady, H. H.

    Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces, ideally mosaic crystals, and may account for the 'polymorphs' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes 'worm holes' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100 C lock in the mechanical twins.

  17. Kinematics of continuously distributed defects in crystals

    CERN Document Server

    Glanville, M J

    2001-01-01

    Crystals are formed by atoms arranged in perfectly symmetrical crystal lattices. However in reality these lattices are never perfect, and deviations, or defects occur. These defects can have an important effect on the physical properties of a crystal and scientists have developed a range of ways to measure this defectiveness, one such being the Burger's Vector. By describing a crystal lattice as a collection of lattice vectors, and then smoothing and extrapolating it is possible to define a crystalline material by a crystal state SIGMA = left brace 1 sub a (x), B:a = 1,2,...right brace where B is the region over which the crystal is defined, x is a point of B and 1 sub a (x) are the lattice vector fields at the point x. Parry and others have demonstrated that using this definition it is possible to generate a set of functions that encompass all possible mathematical measures of defectiveness for crystals with three lattice vectors. In this thesis I, extend this to show that such a basis of measures of defecti...

  18. Line defects and (framed) BPS quivers

    CERN Document Server

    Cirafici, Michele

    2013-01-01

    The BPS spectrum of certain N=2 supersymmetric field theories can be determined algebraically by studying the representation theory of BPS quivers. We introduce methods based on BPS quivers to study line defects. The presence of a line defect opens up a new BPS sector: framed BPS states can be bound to the defect. The defect can be geometrically described in terms of laminations on a curve. To a lamination we associate certain elements of the Leavitt path algebra of the BPS quiver and use them to compute the framed BPS spectrum. We also provide an alternative characterization of line defects by introducing framed BPS quivers. Using the theory of (quantum) cluster algebras, we derive an algorithm to compute the framed BPS spectra of new defects from known ones. Line defects are generated from a framed BPS quiver by applying certain sequences of mutation operations. Framed BPS quivers also behave nicely under a set of "cut and join" rules, which can be used to study how N=2 systems with defects couple to produc...

  19. Segregation of liquid crystal mixtures in topological defects

    Science.gov (United States)

    Rahimi, Mohammad; Ramezani-Dakhel, Hadi; Zhang, Rui; Ramirez-Hernandez, Abelardo; Abbott, Nicholas L.; de Pablo, Juan J.

    2017-04-01

    The structure and physical properties of liquid crystal (LC) mixtures are a function of composition, and small changes can have pronounced effects on observables, such as phase-transition temperatures. Traditionally, LC mixtures have been assumed to be compositionally homogenous. The results of chemically detailed simulations presented here show that this is not the case; pronounced deviations of the local order from that observed in the bulk at defects and interfaces lead to significant compositional segregation effects. More specifically, two disclination lines are stabilized in this work by introducing into a nematic liquid crystal mixture a cylindrical body that exhibits perpendicular anchoring. It is found that the local composition deviates considerably from that of the bulk at the interface with the cylinder and in the defects, thereby suggesting new assembly and synthetic strategies that may capitalize on the unusual molecular environment provided by liquid crystal mixtures.

  20. Effective dislocation lines in continuously dislocated crystals. III. Kinematics

    CERN Document Server

    Trzesowski, Andrzej

    2007-01-01

    A class of congruences of principal Volterra-type effective dislocation lines associated with a dislocation density tensor is distinguished in order to investigate the kinematics of continuized defective crystals in terms of their dislocation densities (tensorial as well as scalar). Moreover, it shown, basing oneself on a formula defining the mean curvature of glide surfaces for principal edge effective dislocation lines, that the considered kinematics of continuized defective crystals is consistent with some relations appearing in the physical theory of plasticity (e.g. with the Orowan-type kinematic relations and with the treatment of shear stresses as driving stresses of moving dislocations).

  1. Degeneracy and Split of Defect States in Photonic Crystals

    Institute of Scientific and Technical Information of China (English)

    黄晓琴; 崔一平

    2003-01-01

    One-dimensional photonic crystals with two or more structural defects are studied. We observed an interesting characteristic of transmission band structure of photonic crystals with defects using the transmission-matrixmethod simulation. The transmission states in the wide photonic band gap caused by defects revealdegeneracy and split in certain conditions. Every split state is contributed by coupling of all defects in a photonic crystal.Using the tight-binding method, we obtain an approximate analytic expression for the split frequency of photonic crystals with two structural defects.

  2. 2D Ising Model with a Defect Line

    CERN Document Server

    Cabra, D C

    1994-01-01

    We study the two-dimensional Ising model with a defect line and evaluate multipoint energy correlation functions using non-perturbative field-theoretical methods. We also discuss the evaluation of the two spin correlator on the defect line.

  3. Acoustic Defect-Mode Waveguides Fabricated in Sonic Crystal: Numerical Analyses by Elastic Finite-Difference Time-Domain Method

    Science.gov (United States)

    Miyashita, Toyokatsu

    2006-05-01

    A novel acoustic waveguide composed of a line of single defects in a sonic crystal is shown to have desirable properties for acoustic circuits. The absence of a scatterer, i.e., a single defect or a point defect, in artificial crystals such as photonic crystals and phononic crystals leads to some localized resonant modes around the defect. Single defects in a sonic crystal made of acrylic resin cylinders in air are shown in this paper to have resonant modes or defect modes, which are excited successively to form a mode guided along a line of defects. Both a straight waveguide and a sharp bending waveguide composed of lines of single defects are shown equally to have a good transmission with small reflections at the inlet as well as at the outlet within the full band gap of the sonic crystal. Their advantages over conventional line-defect waveguides are clearly shown by their transmission versus frequency characteristics and also by typical examples of their spatial acoustic field distribution. On the basis of these properties, coupled defect-mode waveguides are investigated, and a high mode-coupling ratio is obtained. Defect-mode waveguides in a sonic crystal are expected to be desirable elements for functional acoustic circuits. The results of the elastic finite difference time domain (FDTD) method used as a tool of numerical calculation are also investigated and precisely compared with the experimental band gaps.

  4. Elastic interaction of point defects in crystals with cubic symmetry

    Science.gov (United States)

    Kuz'michev, S. V.; Kukushkin, S. A.; Osipov, A. V.

    2013-07-01

    The energy of elastic mechanical interaction between point defects in cubic crystals is analyzed numerically. The finite-element complex ANSYS is used to investigate the character of interaction between point defects depending on their location along the crystallographic directions , , and on the distance from the free boundary of the crystal. The numerical results are compared with the results of analytic computations of the energy of interaction between two point defects in an infinite anisotropic medium with cubic symmetry. The interaction between compressible and incompressible defects of general type is studied. Conditions for onset of elastic attraction between the defects, which leads to general relaxation of the crystal elastic energy, are obtained.

  5. Mechanisms, kinetics, impurities and defects: consequences in macromolecular crystallization

    OpenAIRE

    McPherson, Alexander; Kuznetsov, Yurii G

    2014-01-01

    New imaging techniques, particularly AFM, permitted the elucidation of the mechanisms for protein and virus crystal growth. They have also allowed direct visualization of crystal defect structure and the consequences of impurity incorporation.

  6. Observations of defect propagation in [100]-oriented opal-type photonic crystals

    Institute of Scientific and Technical Information of China (English)

    Jin Chong-Jun; Richard M. De La Rue; Nigel P. Johnson

    2008-01-01

    Charged colloidal suspensions have been used as experimental models for the study of crystal nucleation. Here we propose that the technique of template-assisted colloidal self-assembly can be used to visualize the effects of defect propagation in atomic crystal films produced using epitaxial growth. Templates with periodic line defects were used to grow [100]-oriented three-dimeusional photonic crystals by means of the template-assisted colloidal self-assembly method,aided by capillary and gravitational forces. The defect propagation in the [100J-oriented photonie crystal was observed using scanning electron microscopy, both at the surface of the crystal and on cleaved facets. This method is useful in the understanding of defect propagation in the growth of colloidal films on templates - and the same approach may also prove useful for the understanding of atomic crystal growth on substrates with defects. Additionally, the deliberate incorporation of line defects may prove valuable as a way of introducing waveguide channels into three-dimensional photonic crystals.

  7. Independent Modulation of Omnidirectional Defect Modes in Single-Negative Materials Photonic Crystal with Multiple Defects

    Institute of Scientific and Technical Information of China (English)

    WANG Qiong; YAN Chang-Chun; ZHANG Ling-Ling; CUI Yi-Ping

    2008-01-01

    @@ Single-negative materials based on photonic crystal with multiple defect layers are designed and the free modulation of defect modes is studied. The results show that the multi-defect structure can avoid the interference between the defect states. Therefore, the designed double defect modes in the zero effective-phase gap can be adjusted independently by changing the thickness of different defect layers. In addition, the two tunable defect modes have the omnidirectional characteristics. This multi-defect structure with above-mentioned two advantages has potential applications in modern optical devices such as tunable omnidirectional filters.

  8. Photoluminescence study of 1018 meV defect lines from ion-implanted silicon

    CERN Document Server

    Lee, H S; Seong, E Z; Kim, S M; Lim, H J

    1999-01-01

    We investigated the defects of ion-implanted silicon with boron and argon ions using photoluminescence method. The 1018 meV line, so called I sub 1 line, and its phonon side bands were observed in both boron- and argon-implanted silicon crystals. In argon-implanted silicon crystals, we observed 1009 meV line (I sub r - Ar) and its phonon side bands which arose from argon-I sub 1 complex in addition to the splitting of the I sub 1 line. Annealing temperature dependence of the intensities of the I sub 1 and I sub 1 -Ar lines in argon-implanted silicon was very similar for both Czochralski and float zone silicon crystals whereas that of boron-implanted silicon was very different between the two growing methods. We discussed on the origin of the defects responsible for the I sub 1 and I sub 1 - Ar lines.

  9. Electrically Rotatable Polarizer Using One-Dimensional Photonic Crystal with a Nematic Liquid Crystal Defect Layer

    Directory of Open Access Journals (Sweden)

    Ryotaro Ozaki

    2015-09-01

    Full Text Available Polarization characteristics of defect mode peaks in a one-dimensional (1D photonic crystal (PC with a nematic liquid crystal (NLC defect layer have been investigated. Two different polarized defect modes are observed in a stop band. One group of defect modes is polarized along the long molecular axis of the NLC, whereas another group is polarized along its short axis. Polarizations of the defect modes can be tuned by field-induced in-plane reorientation of the NLC in the defect layer. The polarization properties of the 1D PC with the NLC defect layer is also investigated by the finite difference time domain (FDTD simulation.

  10. Elastic models of defects in two-dimensional crystals

    Science.gov (United States)

    Kolesnikova, A. L.; Orlova, T. S.; Hussainova, I.; Romanov, A. E.

    2014-12-01

    Elastic models of defects in two-dimensional (2D) crystals are presented in terms of continuum mechanics. The models are based on the classification of defects, which is founded on the dimensionality of the specification region of their self-distortions, i.e., lattice distortions associated with the formation of defects. The elastic field of an infinitesimal dislocation loop in a film is calculated for the first time. The fields of the center of dilatation, dislocation, disclination, and circular inclusion in planar 2D elastic media, namely, nanofilms and graphenes, are considered. Elastic fields of defects in 2D and 3D crystals are compared.

  11. Anelastic Relaxation of Point Defects in Cubic Crystals

    OpenAIRE

    Weller, M.

    1996-01-01

    Point defects in solids can give rise to anelastic relaxation provided that the defects behave as elastic dipoles. Experiments with single crystals give information on the atomic configuration of the point defects. Measurements of the orientation dependence of the relaxation strength allow determination of the defect symmetry and the dipole shape factor δλ=|λ1-λ2|. This is demonstrated for two examples : (i) The Snoek relaxation of O and N in Nb and Ta single crystals : The δλ values for O an...

  12. Slow waves in locally resonant metamaterials line defect waveguides

    CERN Document Server

    Kaina, Nadège; Bourlier, Yoan; Fink, Mathias; Berthelot, Thomas; Lerosey, Geoffroy

    2016-01-01

    The ability of electromagnetic waves to interact with matter governs many fascinating effects involved in fundamental and applied, quantum and classical physics. It is necessary to enhance these otherwise naturally weak effects by increasing the probability of wave/matter interactions, either through field confinement or slowing down of waves. This is commonly achieved with structured materials such as photonic crystal waveguides or coupled resonator optical waveguides. Yet their minimum structural scale is limited to the order of the wavelength which not only forbids ultra-small confinement but also severely limits their performance for slowing down waves. Here we show that line defect waveguides in locally resonant metamaterials can outperform these proposals due to their deep subwavelength scale. We experimentally demonstrate our approach in the microwave domain using 3D printed resonant wire metamaterials, achieving group indices ng as high as 227 over relatively wide frequency bands. Those results corres...

  13. Characteristic Work Function Variations of Graphene Line Defects.

    Science.gov (United States)

    Long, Fei; Yasaei, Poya; Sanoj, Raj; Yao, Wentao; Král, Petr; Salehi-Khojin, Amin; Shahbazian-Yassar, Reza

    2016-07-20

    Line defects, including grain boundaries and wrinkles, are commonly seen in graphene grown by chemical vapor deposition. These one-dimensional defects are believed to alter the electrical and mechanical properties of graphene. Unfortunately, it is very tedious to directly distinguish grain boundaries from wrinkles due to their similar morphologies. In this report, high-resolution Kelvin potential force microscopy (KPFM) is employed to measure the work function distribution of graphene line defects. The characteristic work function variations of grain boundaries, standing-collapsed wrinkles, and folded wrinkles could be clearly identified. Classical and quantum molecular dynamics simulations reveal that the unique work function distribution of each type of line defects is originated from the doping effect induced by the SiO2 substrate. Our results suggest that KPFM can be an easy-to-use and accurate method to detect graphene line defects, and also propose the possibility to tune the graphene work function by defect engineering.

  14. Structural phase transitions and topological defects in ion Coulomb crystals

    Energy Technology Data Exchange (ETDEWEB)

    Partner, Heather L. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Nigmatullin, Ramil [Institute of Quantum Physics, Albert-Einstein Allee-11, Ulm University, 89069 Ulm (Germany); Burgermeister, Tobias; Keller, Jonas; Pyka, Karsten [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Plenio, Martin B. [Center for Integrated Quantum Science and Technology, Albert-Einstein-Allee 11, Ulm University, 89069 Ulm (Germany); Institute for Theoretical Physics, Albert-Einstein-Allee 11, Ulm University, 89069 Ulm (Germany); Retzker, Alex [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Givat Ram (Israel); Zurek, Wojciech H. [Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); Campo, Adolfo del [Department of Physics, University of Massachusetts Boston, Boston, MA 02125 (United States); Mehlstäubler, Tanja E., E-mail: tanja.mehlstaeubler@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2015-03-01

    We use laser-cooled ion Coulomb crystals in the well-controlled environment of a harmonic radiofrequency ion trap to investigate phase transitions and defect formation. Topological defects in ion Coulomb crystals (kinks) have been recently proposed for studies of nonlinear physics with solitons and as carriers of quantum information. Defects form when a symmetry breaking phase transition is crossed nonadiabatically. For a second order phase transition, the Kibble–Zurek mechanism predicts that the formation of these defects follows a power law scaling in the rate of the transition. We demonstrate a scaling of defect density and describe kink dynamics and stability. We further discuss the implementation of mass defects and electric fields as first steps toward controlled kink preparation and manipulation.

  15. Structural phase transitions and topological defects in ion Coulomb crystals

    Energy Technology Data Exchange (ETDEWEB)

    Partner, Heather L. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Nigmatullin, Ramil [Institute of Quantum Physics, Ulm Univ., Ulm (Germany); Burgermeister, Tobias [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Keller, Jonas [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Pyka, Karsten [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Plenio, Martin B. [Center for Integrated Quantum Science and Technology, Ulm Univ., Ulm, (Germany):Institute for Theoretical Physics, Ulm Univ.,Ulm, (Germany); Retzker, Alex [Racah Institute of Physics, The Hebrew University of Jerusalem, Givat Ram (Israel); Zurek, Wojciech Hubert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); del Campo, Adolfo [Univ. of Massachusetts, Amherst, MA (United States). Dept. of Physics; Mehlstaubler, Tanja E. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)

    2014-11-19

    We use laser-cooled ion Coulomb crystals in the well-controlled environment of a harmonic radiofrequency ion trap to investigate phase transitions and defect formation. Topological defects in ion Coulomb crystals (kinks) have been recently proposed for studies of nonlinear physics with solitons and as carriers of quantum information. Defects form when a symmetry breaking phase transition is crossed non-adiabatically. For a second order phase transition, the Kibble-Zurek mechanism predicts that the formation of these defects follows a power law scaling in the rate of the transition. We demonstrate a scaling of defect density and describe kink dynamics and stability. We further discuss the implementation of mass defects and electric fields as first steps toward controlled kink preparation and manipulation.

  16. Coupling of two defect modes in photonic crystal fibers

    Institute of Scientific and Technical Information of China (English)

    Yuntuan Fang; Tinggen Shen

    2005-01-01

    The coupling characteristics of two defect modes in photonic crystal fibers are investigated theoretically by the finite-difference time-domain (FDTD) method. The transmission spectrum and eigenmodes of optical wave are found to be very sensitive to the geometrical and physical parameters of the structure, as well as to the relative position of the two defects.

  17. Dynamic interaction between suspended particles and defects in a nematic liquid crystal.

    Science.gov (United States)

    Grollau, S; Abbott, N L; de Pablo, J J

    2003-05-01

    Insertion of spherical particles into a uniform nematic liquid crystal gives rise to the formation of topological defects. In the present work, we investigate how a spherical particle accompanied by its topological defects interacts with neighboring disclination lines. We perform two- and three-dimensional dynamic simulations to analyze the effect of a particle on the annihilation process of two disclination lines. The dynamics of the liquid crystal is described by a time-dependent evolution equation on the symmetric traceless order parameter that includes some of the salient features of liquid crystalline materials: excluded volume effects, or equivalently, short-range order elasticity and long-range order elasticity. At the surface of the particle, the liquid crystal is assumed to exhibit strong homeotropic anchoring. The particle is located between two disclination lines of topological charges +1/2 and -1/2. Two-dimensional simulations indicate that the topological defects bound to the particle mediate an interaction between the two disclination lines which increases the attraction between them. This result is confirmed by three-dimensional simulations that provide a complete description of the director field and of the order parameter around the particle. These simulations indicate that a spherical particle between two disclination lines can be surrounded by a Saturn ring, and suggest that the dynamic behavior of disclination lines could be used to report the structure of a defect around the particle.

  18. Microscopic characterization of defect structure in RDX crystals

    NARCIS (Netherlands)

    Bouma, R.H.B.; Duvalois, W.; Heijden, A.E.D.M. van der

    2013-01-01

    Three batches of the commercial energetic material RDX, as received from various production locations and differing in sensitivity towards shock initiation, have been characterized with different microscopic techniques in order to visualize the defect content in these crystals. The RDX crystals are

  19. Point defects in crystals (including grouped defects). Report No. 4548

    Energy Technology Data Exchange (ETDEWEB)

    Seidman, D.N.

    1981-08-01

    The fundamental properties of point defects, vacancies and self-interstitial atoms, in pure fcc and bcc metals is reviewed. Point defects created by both thermally-activated and irradiation processes are considered. The roles played by vacancies and self-interstitial atoms in thermal equilibrium are discussed and the best values of the enthalpy of formation of these point defects, in a number of metals, are given. Methods for obtaining fundamental properties of vacancies, such as activation volumes, mobilities, and binding enthalpies are discussed. Selected best values of mobilities and binding enthalpies of vacancies, as deduced from recovery experiments on a number of different quenched metals are listed. The problem of the production of single self-interstitial atoms and their configuration(s) is discussed. The clustering of single self-interstitials into small clusters is also considered. The physical origin of the extremely high low-temperature mobility of self-interstitials in the so-called Stage I recovery regime is also discussed.

  20. Phononic crystals with one-dimensional defect as sensor materials

    Science.gov (United States)

    Aly, Arafa H.; Mehaney, Ahmed

    2017-09-01

    Recently, sensor technology has attracted great attention in many fields due to its importance in many engineering applications. In the present work, we introduce a study using the innovative properties of phononic crystals in enhancing a new type of sensors based on the intensity of transmitted frequencies inside the phononic band gaps. Based on the transfer matrix method and Bloch theory, the expressions of the reflection coefficient and dispersion relation are presented. Firstly, the influences of filling fraction ratio and the angle of incidence on the band gap width are discussed. Secondly, the localization of waves inside band gaps is discussed by enhancing the properties of the defected phononic crystal. Compared to the periodic structure, localization modes involved within the band structure of phononic crystals with one and two defect layers are presented and compared. Trapped localized modes can be detected easily and provide more information about defected structures. Such method could increase the knowledge of manufacturing defects by measuring the intensity of propagated waves in the resonant cavities and waveguides. Moreover, several factors enhance the role of the defect layer on the transmission properties of defected phononic crystals are presented. The acoustic band gap can be used to detect or sense the type of liquids filling the defect layer. The liquids make specific resonant modes through the phononic band gaps that related to the properties of each liquid. The frequency where the maximum resonant modes occur is correlated to material properties and allows to determine several parameters such as the type of an unknown material.

  1. Phononic crystals with one-dimensional defect as sensor materials

    Science.gov (United States)

    Aly, Arafa H.; Mehaney, Ahmed

    2017-04-01

    Recently, sensor technology has attracted great attention in many fields due to its importance in many engineering applications. In the present work, we introduce a study using the innovative properties of phononic crystals in enhancing a new type of sensors based on the intensity of transmitted frequencies inside the phononic band gaps. Based on the transfer matrix method and Bloch theory, the expressions of the reflection coefficient and dispersion relation are presented. Firstly, the influences of filling fraction ratio and the angle of incidence on the band gap width are discussed. Secondly, the localization of waves inside band gaps is discussed by enhancing the properties of the defected phononic crystal. Compared to the periodic structure, localization modes involved within the band structure of phononic crystals with one and two defect layers are presented and compared. Trapped localized modes can be detected easily and provide more information about defected structures. Such method could increase the knowledge of manufacturing defects by measuring the intensity of propagated waves in the resonant cavities and waveguides. Moreover, several factors enhance the role of the defect layer on the transmission properties of defected phononic crystals are presented. The acoustic band gap can be used to detect or sense the type of liquids filling the defect layer. The liquids make specific resonant modes through the phononic band gaps that related to the properties of each liquid. The frequency where the maximum resonant modes occur is correlated to material properties and allows to determine several parameters such as the type of an unknown material.

  2. Size of Defect Clusters in Lithium Niobate Single Crystals

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    On the basis of the Li-site vacancy model, the non-stoichiometric defects in LN crystals, i.e., anti-site defects NbLi and corresponding lithium vacancy defects VLi, were investigated by the bond valence model. According to the valence sum rule, 4 VLi sites must emerge in the nearest lattices of NbLi, and thus form a neutral cluster with the center, NbLi(VLi)4Nb5O15. The bond graph of the defect cluster was given, which reveals the ideal chemical bonding characteristics of defect clusters. Combining the possible configuration of defect clusters and the ideal bond lengths in the bond graph, the size of defect clusters in the LN crystallographic frame is estimated as 0.9~1.2 nm in diameter.

  3. Highly birefringent extruded elliptical-hole photonic crystal fibers with single defect and double defects

    Institute of Scientific and Technical Information of China (English)

    Zhongjiao He

    2009-01-01

    Highly birefringent elliptical-hole photonic crystal fibers(PCFs)with single defect and double defects are proposed,which are suppoosed to be achieved by extruding normal circular-hole PCFs based on a triangular lattice photonic crystal structure.Comparative research on the birefringence and the confinement loss of the proposed PCFs with single defect and double defects is presented.Simulation results show that the proposed PCFs with single defect and double defects can be with high birefringence(even up to the order of 10-2).The confinement loss increases when the ellipticity of the air hole of the PCFs increases,which nevertheless can be overconle by increasing the ring number or the area of the air holes in the fiber cladding.

  4. International conference on defects in insulating crystals

    Energy Technology Data Exchange (ETDEWEB)

    1977-01-01

    Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

  5. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    Science.gov (United States)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  6. Defect formation energy in pyrochlore: the effect of crystal size

    Science.gov (United States)

    Wang, Jianwei; Ewing, Rodney C.; Becker, Udo

    2014-09-01

    Defect formation energies of point defects of two pyrochlores Gd2Ti2O7 and Gd2Zr2O7 as a function of crystal size were calculated. Density functional theory with plane-wave basis sets and the projector-augmented wave method were used in the calculations. The results show that the defect formation energies of the two pyrochlores diverge as the size decreases to the nanometer range. For Gd2Ti2O7 pyrochlore, the defect formation energy is higher at nanometers with respect to that of the bulk, while it is lower for Gd2Zr2O7. The lowest defect formation energy for Gd2Zr2O7 is found at 15-20 Å. The different behaviors of the defect formation energies as a function of crystal size are caused by different structural adjustments around the defects as the size decreases. For both pyrochlore compositions at large sizes, the defect structures are similar to those of the bulk. As the size decreases, for Gd2Ti2O7, additional structure distortions appear at the surfaces, which cause the defect formation energy to increase. For Gd2Zr2O7, additional oxygen Frenkel pair defects are introduced, which reduce the defect formation energy. As the size further decreases, increased structure distortions occur at the surfaces, which cause the defect formation energy to increase. Based on a hypothesis that correlates the energetics of defect formation and radiation response for complex oxides, the calculated results suggest that at nanometer range Gd2Ti2O7 pyrochlore is expected to have a lower radiation tolerance, and those of Gd2Zr2O7 pyrochlore to have a higher radiation tolerance. The highest radiation tolerance for Gd2Zr2O7 pyrochlore is expected to be found at ˜2 nanometers.

  7. Defect free single crystal thin layer

    KAUST Repository

    Elafandy, Rami Tarek Mahmoud

    2016-01-28

    A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

  8. Point defects in hard-sphere crystals

    OpenAIRE

    Pronk, S.; Frenkel, D.

    2001-01-01

    We report numerical calculations of the concentration of interstitials in hard-sphere crystals. We find that, in a three-dimensional fcc hard-sphere crystal at the melting point, the concentration of interstitials is 2 * 10^-8. This is some three orders of magnitude lower than the concentration of vacancies. A simple, analytical estimate yields a value that is in fair agreement with the numerical results.

  9. Line Defects, Tropicalization, and Multi-Centered Quiver Quantum Mechanics

    CERN Document Server

    Cordova, Clay

    2013-01-01

    We study BPS line defects in N=2 supersymmetric four-dimensional field theories. We focus on theories of "quiver type," those for which the BPS particle spectrum can be computed using quiver quantum mechanics. For a wide class of models, the renormalization group flow between defects defined in the ultraviolet and in the infrared is bijective. Using this fact, we propose a way to compute the BPS Hilbert space of a defect defined in the ultraviolet, using only infrared data. In some cases our proposal reduces to studying representations of a "framed" quiver, with one extra node representing the defect. In general, though, it is different. As applications, we derive a formula for the discontinuities in the defect renormalization group map under variations of moduli, and show that the operator product algebra of line defects contains distinguished subalgebras with universal multiplication rules. We illustrate our results in several explicit examples.

  10. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

    2017-06-06

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  11. Defect reduction in seeded aluminum nitride crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A.

    2017-04-18

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  12. The development of an inspection system for defects in silicon crystal growth

    Science.gov (United States)

    Liu, Ya-Cheng; Tsai, Hsin-Yi; Hung, Min-Wei; Huang, Kuo-Cheng

    2013-03-01

    This study presents an inspection system to detect the growth defects of silicon crystals that comprise a CCD camera, an LED light source, and power modulation. The defects on multicrystalline silicon can be observed clearly while the silicon wafer were irradiated by the red LED light at a small lighting angle (i.e., 20-30°). However, the growth defects on monocrystalline silicon wafer were difficult to observe because of it low image intensity. And then, the growth defects image was significantly enhanced when the wafer was illuminated by a white LED (WLED) and rotated at a specific angle (i.e., 23°). The experimental results showed that the WLED illumination system made the growth defects more easily observable than did other LED sources (i.e., red, blue, and green LEDs). In addition, the proposed inspection system can be used for on-line fast detection for quality control of monocrystalline silicon wafer.

  13. Electronic transport of bilayer graphene with asymmetry line defects

    Science.gov (United States)

    Zhao, Xiao-Ming; Wu, Ya-Jie; Chen, Chan; Liang, Ying; Kou, Su-Peng

    2016-11-01

    In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

  14. Analysis of Nematic Liquid Crystals with Disclination Lines

    CERN Document Server

    Bauman, P; Phillips, D

    2011-01-01

    We investigate the structure of nematic liquid crystal thin films described by the Landau--de Gennes tensor-valued order parameter with Dirichlet boundary conditions of nonzero degree. We prove that as the elasticity constant goes to zero a limiting uniaxial texture forms with disclination lines corresponding to a finite number of defects, all of degree 1/2 or all of degree -1/2. We also state a result on the limiting behavior of minimizers of the Chern-Simons-Higgs model without magnetic field that follows from a similar proof.

  15. CRYSTAL DEFECTS IN PLASMA NITRIDED LAYER CATALYZED BY RARE EARTH

    Institute of Scientific and Technical Information of China (English)

    F.S. Chen; Y.X. Liu; D.K. Liang; L.M. Xiao

    2002-01-01

    The microstructure of plasma nitrided layer catalyzed by rare-earth elements has beenstudied with TEM. The results show that the grains of γ'-Fe4N phase are refinedby rare-earth elements and the plane defects in boundary are increased by rare-earthelements. The addition of rare-earth element increases the bombardment effect andthe number of crystal defects such as vacancies, dislocation loops, twins and stackingfaults in γ'-Fe4N phase and can produce the high-density dislocations in the ferrite ofdiffusion layer at a distance 0. 08mm from the surface. The production of a numberof crystal defects is one of important reasons why rare-earth element accelerates thediffusion of nitrogen atoms during plasma-nitridiug.

  16. Ordering Quantum Dot Clusters via Nematic Liquid Crystal Defects

    Science.gov (United States)

    Rodarte, Andrea; Pandolfi, R.; Hirst, L. S.; Ghosh, S.

    2012-11-01

    Nematic liquid crystal (LC) materials can be used to create ordered clusters of CdSe/ZnS core/shell quantum dots (QDs) from a homogeneous isotropic dispersion. At the phase transition, the ordered domains of nematic LC expel the majority of dispersed QDs into the isotropic domains. The final LC phase produces a series of QD clusters that are situated at the defect points of the liquid crystal texture. Lower concentrations of QDs are organized in a network throughout the LC matrix that originates from the LC phase transition. Inside the QD clusters the inter-particle distance enables efficient energy transfer from high energy dots to lower energy dots. Because the QD clusters form at defect sites, the location of the clusters can be preselected by seeding the LC cell with defect nucleation points.

  17. Analysis of Boundary Conditions for Crystal Defect Atomistic Simulations

    Science.gov (United States)

    Ehrlacher, V.; Ortner, C.; Shapeev, A. V.

    2016-12-01

    Numerical simulations of crystal defects are necessarily restricted to finite computational domains, supplying artificial boundary conditions that emulate the effect of embedding the defect in an effectively infinite crystalline environment. This work develops a rigorous framework within which the accuracy of different types of boundary conditions can be precisely assessed. We formulate the equilibration of crystal defects as variational problems in a discrete energy space and establish qualitatively sharp regularity estimates for minimisers. Using this foundation we then present rigorous error estimates for (i) a truncation method (Dirichlet boundary conditions), (ii) periodic boundary conditions, (iii) boundary conditions from linear elasticity, and (iv) boundary conditions from nonlinear elasticity. Numerical results confirm the sharpness of the analysis.

  18. An Experiment with Manifold Purposes: The Chemical Reactivity of Crystal Defects upon Crystal Dissolution.

    Science.gov (United States)

    Lazzarini, Annaluisa Fantola; Lazzarini, Ennio

    1983-01-01

    Background information and procedures are provided for an experiment designed to introduce (1) crystal defects and their reactivity upon crystal dissolution; (2) hydrates electron and its reactivity; (3) application of radiochemical method of analysis; and (4) the technique of competitive kinetics. Suggested readings and additional experiments are…

  19. Modelling of transport phenomena and defects in crystal growth processes

    Indian Academy of Sciences (India)

    S Pendurti; H Zhang; V Prasad

    2001-02-01

    A brief review of single crystal growth techniques and the associated problems is presented. Emphasis is placed on models for various transport and defect phenomena involoved in the growth process with the ultimate aim of integrating them into a comprehensive numerical model. The sources of dislocation nucleation in the growing crystal are discussed, and the propagation and multiplication of these under the action of thermal stresses is discussed. A brief description of a high-level numerical technique based on multiple adaptive grid generation and finite volume discretization is presented, followed by the result of a representative numerical simulation.

  20. Crystal defect studies using x-ray diffuse scattering

    Energy Technology Data Exchange (ETDEWEB)

    Larson, B.C.

    1980-01-01

    Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above.

  1. Investigation into thallium sites and defects in doped scintillation crystals

    Energy Technology Data Exchange (ETDEWEB)

    Blacklocks, A.N.; Chadwick, A.V. [Functional Materials Group, School of Physical Sciences, University of Kent (United Kingdom); Jackson, R.A. [Lennard-Jones Laboratories, School of Physical and Geographical Sciences, Keele University (United Kingdom); Hutton, K.B. [Hilger Crystals, Westwood, Margate, Kent (United Kingdom)

    2007-03-15

    Thallium doped caesium iodide, CsI(Tl), and sodium iodide, NaI(Tl) are two of the most efficient scintillators developed and are already widely used for radiation detection and imaging applications. Their use in fast imaging applications however has been hindered by a long lasting high level of afterglow - the percentage of the luminescence pulse remaining a short time after excitation. Very little is known about the point defects in these crystals, such as structure and concentrations, and the first step to understanding the causes of the afterglow is to understand the nature of the defects responsible for the scintillation. In this paper the local structure of the thallium activator ion has been investigated via EXAFS spectroscopy and some basic intrinsic defects calculated using the General Utility Lattice Program (GULP). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Massive ghost theories with a line of defects

    Science.gov (United States)

    Mosconi, Paola

    2003-06-01

    We study free massive fermionic ghosts, in the presence of an extended line of impurities, relying on the Lagrangian formalism. We propose two distinct defect interactions, respectively, of relevant and marginal nature. The corresponding scattering theories reveal the occurrence of resonances and instabilities in the former case and the presence of poles with imaginary residues in the latter. Correlation functions of the thermal and disorder operators are computed exactly, exploiting the bulk form factors and the matrix elements relative to the defect operator. In the marginal situation, the one-point function of the disorder operator displays a critical exponent continuously varying with the interaction strength.

  3. Local defects are always neutral in the Thomas-Fermi-von Weisz\\"acker theory of crystals

    CERN Document Server

    Cancès, Eric

    2010-01-01

    The aim of this article is to propose a mathematical model describing the electronic structure of crystals with local defects in the framework of the Thomas-Fermi-von Weizs\\"acker (TFW) theory. The approach follows the same lines as that used in {\\it E. Canc\\`es, A. Deleurence and M. Lewin, Commun. Math. Phys., 281 (2008), pp. 129--177} for the reduced Hartree-Fock model, and is based on thermodynamic limit arguments. We prove in particular that it is not possible to model charged defects within the TFW theory of crystals. We finally derive some additional properties of the TFW ground state electronic density of a crystal with a local defect, in the special case when the host crystal is modelled by a homogeneous medium.

  4. Defect topologies in chiral liquid crystals confined to mesoscopic channels.

    Science.gov (United States)

    Schlotthauer, Sergej; Skutnik, Robert A; Stieger, Tillmann; Schoen, Martin

    2015-05-21

    We present Monte Carlo simulations in the grand canonical and canonical ensembles of a chiral liquid crystal confined to mesochannels of variable sizes and geometries. The mesochannels are taken to be quasi-infinite in one dimension but finite in the two other directions. Under thermodynamic conditions chosen and for a selected value of the chirality coupling constant, the bulk liquid crystal exhibits structural characteristics of a blue phase II. This is established through the tetrahedral symmetry of disclination lines and the characteristic simple-cubic arrangement of double-twist helices formed by the liquid-crystal molecules along all three axes of a Cartesian coordinate system. If the blue phase II is then exposed to confinement, the interplay between its helical structure, various anchoring conditions at the walls of the mesochannels, and the shape of the mesochannels gives rise to a broad variety of novel, qualitative disclination-line structures that are reported here for the first time.

  5. A Hydrogen - Vacancy Defect In Single-Crystal Silicon

    Science.gov (United States)

    Melnikov, V. V.

    2016-09-01

    Results of a theoretical study of the interaction of interstitial molecular hydrogen with vacancies and the effect of generated defects on the structural and energy characteristics of the H2-Si system are considered. Within the framework of a 5D model it has been demonstrated that the decrease of system symmetry under transition to the crystal defect structure and the increase of the rotational barrier due to the strong interaction of the molecule with a vacancy lead to the significant restructuring of H2 energy spectrum. However, when the molecule is stable its rotational degrees of freedom remain active and H2 low-lying energy levels correspond to the definite values of the angular momentum.

  6. Phase Sensitive X-Ray Diffraction Imaging of Defects in Biological Macromolecular Crystals

    Science.gov (United States)

    Hu, Z. W.; Lai, B.; Chu, Y. S.; Cai, Z.; Mancini, D. C.; Thomas, B. R.; Chernov, A. A.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Characterization of defects and/or disorder in biological macromolecular crystals presents much greater challenges than in conventional small-molecule crystals. The lack of sufficient contrast of defects is often a limiting factor in x-ray diffraction topography of protein crystals. This has seriously hampered efforts to understand mechanisms and origins of formation of imperfections, and the role of defects as essential entities in the bulk of macromolecular crystals. In this report, we employ a phase sensitive x-ray diffraction imaging approach for augmenting the contrast of defects in protein crystals.

  7. Photonic crystal channel drop filter based on ring-shaped defects for DWDM systems

    Science.gov (United States)

    Dideban, Ali; Habibiyan, Hamidreza; Ghafoorifard, Hassan

    2017-03-01

    This paper presents a novel configuration of channel drop filters based on two-dimensional photonic crystal slabs in silicon-on-insulator platforms. The structure is composed of two photonic crystal line-defect waveguides as input and output ports, along with an L3 cavity with ring-shaped border holes. The effects of structural parameters and fabrication errors on resonance frequency and drop efficiency are investigated. Band structure and propagation of electromagnetic field through device are calculated by plane wave expansion and finite-difference time-domain methods. The results show that the quality factor and line-width of output signal are 5690 and 0.27 nm, respectively, indicating that the proposed filter can be properly used in dense wavelength division multiplexing systems with 0.8 nm channel spacing.

  8. Scattering of thermal phonons by extended defects in dielectric crystals

    Energy Technology Data Exchange (ETDEWEB)

    Roth, E. P.

    1975-01-01

    The scattering of thermal phonons by extended defects in dielectric crystals has been observed through measurements of thermal conductivity and ballistic heat pulse propagation. The thermal conductivities of LiF and NaCl conatining 500 low-angle grain boundaries per cm were measured in the range 0.08-5 K. The measurements gave little or no evidence for phonon scattering from the grain boundaries. Measurements of phonon scattering at a 10 deg. grain boundary in silicon using direct generation and detection of ballistically propagating heat pulses were made over an effective phonon temperature range of 2 to 20 K. The grain boundary reflection coefficient was determined to be < 2%. The thermal conductivities of LiF crystals containing 5 x 10/sup 6/ - 3 x 10/sup 7/ dislocations per square cm were measured over the temperature range 0.1 to 10 K. The measurements of the sheared crystal indicated that the slow transverse phonon mode was strongly scattered by a dynamic phonon-dislocation interaction at T approximately < 2 K, while the remaining modes were scattered primarily by the boundaries. The measurements of the bent crystals indicated that, for T approximately < 2 K, the slow transverse and possibly the longitudinal phonons were strongly scattered by a dynamic phonon-dislocation interaction. For T approximately > 2 k, some fraction of the phonons (at least the slow transverse mode) were still strongly scattered, even after long exposure to ..gamma.. irradiation, while the remaining phonons were scattered primarily by the boundaries.

  9. Sharp photonic Crystal Defect Modes and Their Response to Ultrashort Optical Pulses

    Institute of Scientific and Technical Information of China (English)

    Kyozo; Kanamoto; Sheng; Lan; Naoki; Ikeda; Yoshimasa; Sugimoto; Kiyoshi; Asakawa; Hiroshi; Ishikawa

    2003-01-01

    Single photonic crystal defects based on an air-bridge structure were fabricated. We obtained sharp defect modes with quality factors higher than 600 and observed their response to ultrashort optical pulses by utilizing two-photon absorption.

  10. Growth Defects in Langasite Crystals Observed with White Beam Synchrotron Radiation Topography

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Langasite single crystal was grown by the Czochralski method and its perfection was assessed by white beam synchrotron radiation topography. It is found that the growth core and the growth striations are the primary growth defects and they show strong X-ray kinematical contrast in the topographs. Another typical defect in LGS crystal is dislocation. The formation mechanisms of these growth defects in LGS crystals were discussed.

  11. Photonic band-gap and defect modes of a one-dimensional photonic crystal under localized compression

    Science.gov (United States)

    Sánchez, A.; Porta, A. V.; Orozco, S.

    2017-05-01

    The rupture of periodicity caused by one defect (defect layer) in a one-dimensional photonic crystal (1DPhC) results in a narrow transmission spectral line in the photonic band-gap, and the field distribution shows a strong confinement in the proximity of the defect layer. In this work, we present a theoretical model to calculate the frequency of defect modes caused by defect layers induced by localized mechanical stress. Two periodical arrangements were studied: one with layers of poly(methyl-methacrylate) (PMMA) and polystyrene (PS), PMMA-PS; the other with layers of PMMA and fused silica (SiO2), PMMA-SiO2. The defect layers were induced by localized compression (tension). The frequencies of the defect modes were calculated using elasto-optical theory and plane wave expansion and perturbation methods. Numerical results show that the frequency of the defect mode increases (decreases) when the compression (tension) increases. Based on the theoretical model developed, we show that compression of n layers of a 1DPhC induces n defect modes whose frequencies depend on the compression magnitude in the case of normal incidence of electromagnetic waves, in accordance with the results reported for other types of defect layers. The methodology shows the feasibility of the plane wave expansion and perturbation methods to study the frequency of the defect modes. Both periodical arrangements are suitable for designing mechanically tunable (1DPhC)-based narrow pass band filters and narrow reflectors in the (60, 65) THz range.

  12. Nucleation and crystal growth in laser patterned lines in glasses

    Directory of Open Access Journals (Sweden)

    Takayuki Komatsu

    2016-07-01

    Full Text Available Laser-induced crystallization is a new method for the design and control of the crystallization of glasses and opens a new door in the study of nucleation and crystal growth in glasses. Nonlinear optical Sm-doped -BaB2O4 (-BBO crystal lines were patterned by continuous wave Yb:YVO4 fiber laser (wavelength 1080 nm in 8Sm2O3-42BaO-50B2O3 glass as an example, and nucleation and crystal growth behaviors in the laser-patterned bending and crossing lines were examined. It was confirmed that the growth of c-axis oriented -BBO crystals follows along the laser scanning direction even if laser scanning direction changes. The model of self-organized homo-epitaxial crystal growth was demonstrated for the orientation of -BBO crystals at the crossing point of two lines, in which the first crystal line at the crossing point acts as nucleation site for the second crystal line. This study proposes a new crystal growth technology.

  13. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  14. Nucleation and crystal growth in laser patterned lines in glasses

    OpenAIRE

    Takayuki Komatsu; Tsuyoshi Honma

    2016-01-01

    Laser-induced crystallization is a new method for the design and control of the crystallization of glasses and opens a new door in the study of nucleation and crystal growth in glasses. Nonlinear optical Sm-doped -BaB2O4 (-BBO) crystal lines were patterned by continuous wave Yb:YVO4 fiber laser (wavelength 1080 nm) in 8Sm2O3-42BaO-50B2O3 glass as an example, and nucleation and crystal growth behaviors in the laser-patterned bending and crossing lines were examined. It was confirmed that the...

  15. Random walk with a boundary line as a free massive boson with a defect line

    CERN Document Server

    Valleriani, A

    1995-01-01

    We show that the problem of Random Walk with boundary attractive potential may be mapped onto the free massive bosonic Quantum Field Theory with a line of defect. This mapping permits to recover the statistical properties of the Random Walks by using boundary S--matrix and Form Factor techniques.

  16. Influence of microgravity on Ce-doped Bi12SiO20 crystal defect

    Indian Academy of Sciences (India)

    Y F Zhou; J Y Xu; Y Liu; L D Chen; Y Y Huang; W X Huang

    2007-06-01

    Space grown BSO crystal doped with Ce was characterized by means of X-ray fluorescence spectra, X-ray topography, dislocation density etc. Influence of microgravity on Ce-doped BSO crystal defect was studied by comparing space grown BSO crystal with ground grown one. These results show that compositional homogeneity and structural perfection of crystal can be improved under microgravity conditions.

  17. Two dimensional tunable photonic crystal defect based drop filter at communication wavelength

    Science.gov (United States)

    D'souza, Nirmala Maria; Mathew, Vincent

    2017-07-01

    We propose a two dimensional photonic crystal (PhC) based drop filter, at communication wavelength with more than 90% transmission. The filtering is achieved by introducing two line defects and three point defects in a two dimensional triangular array of ferroelectric rods in air. Using the electro-optic property of the ferroelectric, about 32 nm tuning in the resonance wavelength is obtained. For the calculation of transmission, finite difference time domain (FDTD) simulations were performed. The operating frequency range is explored via the band structure which is obtained by the implementation of plane wave expansion (PWE) method. The influence of the radius of various rods on the filter wavelength as well as efficiency is also analyzed. The different possible configurations of this filter are also considered.

  18. Investigation and Modification of Coupling of Photonic Crystal Defects

    Institute of Scientific and Technical Information of China (English)

    LIN Xu-Sheng; CHEN Xiong-Wen; LAN Sheng

    2005-01-01

    @@ We investigate the coupling of photonic crystal (PC) defects by using coupled-mode theory. The PC molecules formed by the coupling of two identical PC atoms are the focus of our study. It is revealed that the flatness of the transmission spectra of the PC molecules is determined uniquely by the phase shift of the travelling wave between the two coupled PC atoms. By properly adjusting the distance between the two constitutional PC atoms, we are able to modify the transmission spectrum of the resulting PC molecule. Theoretical analyses based on the coupled-mode theory are in good agreement with the simulation results obtained by the transfer matrix method and the finite-difference time-domain technique.

  19. Voltage-induced defect mode interaction in a one-dimensional photonic crystal with a twisted-nematic defect layer

    CERN Document Server

    Timofeev, Ivan V; Gunyakov, Vladimir A; Myslivets, Sergey A; Arkhipkin, Vasily G; Vetrov, Stepan Ya; Lee, Wei; Zyryanov, Victor Ya

    2011-01-01

    Defect modes are investigated in a band gap of an electrically tunable one-dimensional photonic crystal infiltrated with a twisted-nematic liquid crystal (1D PC/TN). Their frequency shift and interference under applied voltage are studied both experimentally and theoretically. We deal with the case where the defect layer thickness is much larger than the wavelength (Mauguin condition). It is shown theoretically that the defect modes could have a complex structure with the elliptic polarization. Two series of polarized modes interact with each other and exhibit an avoided crossing phenomenon in the case of opposite parity.

  20. Tunable defect mode realized by graphene-based photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Jiahui; Chen, Wan, E-mail: dhtyyobdc@126.com; Lv, Bo

    2016-04-29

    In this literature, we propose an active terahertz 1D photonic crystal, which consists of silicon layers and air layers. A graphene sheet is embedded at the interface between dielectric and air. Tunable photonic band gap is realized by changing the Fermi level of graphene. Transmission Matrix Method is utilized to explain the influence of the graphene layer. We also demonstrate that a dielectric slab attached with a thin sheet made of single-negative metamaterial acts like a pure dielectric slab with a thinner thickness. A tunable blue shift of the band gap can be realized by simply applying different chemical potentials on the graphene sheet. This feature can be utilized for the design of tunable high-gain antenna array and force generator in terahertz band. - Highlights: • A novel PhC embedded with grapheme sheets is presented, tunable defect is realized. • The mechanism of the tunable defect is explained using the change of equivalent thickness. • The electromagnetic force of a slab is calculated, which indicates the structure can serve as a tunable force generator.

  1. Formation of deformation substructures in FCC crystals under the influence of point defect fluxes

    OpenAIRE

    Matveev, M. V.; Selivanikova, Olga Valerievna; Cherepanov, Dmitry Nikolaevich

    2016-01-01

    The article deals with sub-structural transformations in FCC crystals under the influence of point defect fluxes. Different relationships between accumulation of point defects in crystal and substructure transformations, in particular during the process of fragmented dislocation structure formation have been received.

  2. Spatial and frequency domain effects of defects in 1D photonic crystal

    CERN Document Server

    Rudziński, A; Szczepański, P; 10.1007/s11082-007-9095-3

    2009-01-01

    The aim of this paper is to present the analysis of influence of defects in 1D photonic crystal (PC) on the density of states and simultaneously spontaneous emission, in both spatial and frequency domains. In our investigations we use an analytic model of 1D PC with defects. Our analysis reveals how presence of a defect causes a defect mode to appear. We show that a defect in 1D PC has local character, being negligible in regions of PC situated far from the defected elementary cell. We also analyze the effect of multiple defects, which lead to photonic band gap splitting.

  3. Line defects in graphene: How doping affects the electronic and mechanical properties

    Science.gov (United States)

    Berger, Daniel; Ratsch, Christian

    2016-06-01

    Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local nonhexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature exciting electronic properties. Here, we address the properties of line defects in graphene from first principles on the level of full-potential density-functional theory, and assess doping as one strategy to strengthen such materials. We carefully disentangle the global and local effect of doping by comparing results from the virtual crystal approximation with those from local substitution of chemical species, in order to gain a detailed understanding of the breaking and stabilization mechanisms. We find that doping primarily affects the occupation of the frontier orbitals. Occupation through n -type doping or local substitution with nitrogen increases the ultimate tensile strength significantly. In particular, it can stabilize the defects beyond the ultimate tensile strength of the pristine material. We therefore propose this as a key strategy to strengthen graphenic materials. Furthermore, we find that doping and/or applying external stress lead to tunable and technologically interesting metal/semiconductor transitions.

  4. Guiding, bending, and splitting of coupled defect surface modes in a surface-wave photonic crystal

    CERN Document Server

    Gao, Zhen; Zhang, Baile

    2016-01-01

    We experimentally demonstrate a type of waveguiding mechanism for coupled surface-wave defect modes in a surface-wave photonic crystal. Unlike conventional spoof surface plasmon waveguides, waveguiding of coupled surface-wave defect modes is achieved through weak coupling between tightly localized defect cavities in an otherwise gapped surface-wave photonic crystal, as a classical wave analogue of tight-binding electronic wavefunctions in solid state lattices.

  5. Spin helical states and spin transport of the line defect in silicene lattice

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mou; Chen, Dong-Hai; Wang, Rui-Qiang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui, E-mail: ykbai@semi.ac.cn [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

    2015-02-06

    We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide. - Highlights: • Band structure of silicene with a line defect. • Spin helical states around the line defect and their probability distribution features. • Spin transport along the line defect and that in the bulk silicene.

  6. Antipolar ordering of topological defects in active liquid crystals

    Science.gov (United States)

    Oza, Anand U.; Dunkel, Jörn

    2016-09-01

    ATP-driven microtubule-kinesin bundles can self-assemble into two-dimensional active liquid crystals (ALCs) that exhibit a rich creation and annihilation dynamics of topological defects, reminiscent of particle-pair production processes in quantum systems. This recent discovery has sparked considerable interest but a quantitative theoretical description is still lacking. We present and validate a minimal continuum theory for this new class of active matter systems by generalizing the classical Landau-de Gennes free-energy to account for the experimentally observed spontaneous buckling of motor-driven extensile microtubule bundles. The resulting model agrees with recently published data and predicts a regime of antipolar order. Our analysis implies that ALCs are governed by the same generic ordering principles that determine the non-equilibrium dynamics of dense bacterial suspensions and elastic bilayer materials. Moreover, the theory manifests an energetic analogy with strongly interacting quantum gases. Generally, our results suggest that complex nonequilibrium pattern-formation phenomena might be predictable from a few fundamental symmetry-breaking and scale-selection principles.

  7. Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

    Science.gov (United States)

    Abe, T.; Takahashi, T.; Shirai, K.

    2017-02-01

    In order to reveal a steady distribution structure of point defects of no growing Si on the solid-liquid interface, the crystals were grown at a high pulling rate, which Vs becomes predominant, and the pulling was suddenly stopped. After restoring the variations of the crystal by the pulling-stop, the crystals were then left in prolonged contact with the melt. Finally, the crystals were detached and rapidly cooled to freeze point defects and then a distribution of the point defects of the as-grown crystals was observed. As a result, a dislocation loop (DL) region, which is formed by the aggregation of interstitials (Is), was formed over the solid-liquid interface and was surrounded with a Vs-and-Is-free recombination region (Rc-region), although the entire crystals had been Vs rich in the beginning. It was also revealed that the crystal on the solid-liquid interface after the prolonged contact with the melt can partially have a Rc-region to be directly in contact with the melt, unlike a defect distribution of a solid-liquid interface that has been growing. This experimental result contradicts a hypothesis of Voronkov's diffusion model, which always assumes the equilibrium concentrations of Vs and Is as the boundary condition for distribution of point defects on the growth interface. The results were disscussed from a qualitative point of view of temperature distribution and thermal stress by the pulling-stop.

  8. Modelling defect cavities formed in inverse three-dimensional rod-connected diamond photonic crystals

    Science.gov (United States)

    Taverne, M. P. C.; Ho, Y.-L. D.; Zheng, X.; Liu, S.; Chen, L.-F.; Lopez-Garcia, M.; Rarity, J. G.

    2016-12-01

    Defect cavities in 3D photonic crystal can trap and store light in the smallest volumes allowable in dielectric materials, enhancing non-linearities and cavity QED effects. Here, we study inverse rod-connected diamond (RCD) crystals containing point defect cavities using plane-wave expansion and finite-difference time domain methods. By optimizing the dimensions of the crystal, wide photonic bandgaps are obtained. Mid-bandgap resonances can then be engineered by introducing point defects in the crystal. We investigate a variety of single spherical defects at different locations in the unit cell focusing on high-refractive-index-contrast (3.3:1) inverse RCD structures; quality factors (Q-factors) and mode volumes of the resonant cavity modes are calculated. By choosing a symmetric arrangement, consisting of a single sphere defect located at the center of a tetrahedral arrangement, mode volumes < 0.06 cubic wavelengths are obtained, a record for high-index cavities.

  9. Modelling Defect Cavities Formed in Inverse Three-Dimensional Rod-Connected Diamond Photonic Crystals

    CERN Document Server

    Taverne, M P C; Zheng, X; Liu, S; Chen, L -F; Lopez-Garcia, M; Rarity, J G

    2016-01-01

    Defect cavities in 3D photonic crystal can trap and store light in the smallest volumes allowable in dielectric materials, enhancing non-linearities and cavity QED effects. Here, we study inverse rod-connected diamond (RCD) crystals containing point defect cavities using plane-wave expansion and finite-difference time domain methods. By optimizing the dimensions of the crystal, wide photonic band gaps are obtained. Mid-bandgap resonances can then be engineered by introducing point defects in the crystal. We investigate a variety of single spherical defects at different locations in the unit cell focusing on high-refractive-index contrast (3.3:1) inverse RCD structures; quality factors (Q-factors) and mode volumes of the resonant cavity modes are calculated. By choosing a symmetric arrangement, consisting of a single sphere defect located at the center of a tetrahedral arrangement, small mode volumes are obtained.

  10. Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

    Science.gov (United States)

    Liu, Yu; Wang, Gang; Wang, Shunchong; Yang, Jianhui; Chen, Liang; Qin, Xiubo; Song, Bo; Wang, Baoyi; Chen, Xiaolong

    2011-02-25

    Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.

  11. Tunable omnidirectional multichannel filters based on dual-defective photonic crystals containing negative-index materials

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yihang, E-mail: kallenmail@sina.co [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China)

    2009-04-07

    Multiple defect modes may generate in one-dimensional dual-defective photonic crystals containing negative-index materials. The interference between the two kinds of defect states of the proposed structure is avoided. Therefore, the frequency, frequency interval and number of the defect modes corresponding to different kinds of defects can be tuned independently as desired. These defect modes inside the zero n-bar gap are insensitive to the incident angle. It thus opens a promising way to fabricate omnidirectional multichannel filters with specific channels.

  12. Quantum-chemical approach to defect formation processes in non-metallic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kotomin, E.A.; Shluger, A.L. (Latvijskij Gosudarstvennyj Univ., Riga (USSR))

    1989-01-01

    Results of the quantum-chemical simulation of the formation of structural and radiation defects are reviewed, using ice, silicon, and silicon dioxide as examples. The relationship between the structural elements of these crystals and the structural defects is analysed. Models of the main defects, their optical characteristics, and the activation energy of their migration are discussed. The relationship between the characteristics obtained by quantum-chemical calculations and the parameters of the macroscopic kinetics of the processes induced by defects in dielectric crystals is considered. (author).

  13. Photonic defect modes in a cholesteric liquid crystal with a resonant nanocomposite layer and a twist defect

    Science.gov (United States)

    Vetrov, Stepan Ya.; Pyatnov, Maxim V.; Timofeev, Ivan V.

    2014-09-01

    We have studied spectral properties of a cholesteric liquid crystal with a combined defect consisting of a nanocomposite layer and a twist. The nanocomposite layer is made of metallic nanoballs dispersed in a transparent matrix and featuring effective resonant permittivity. A solution has been found for the transmission spectrum of circularly polarized waves in the structure. We have analyzed spectral splitting of the defect mode in the band gap of the cholesteric when its frequency coincides with the nanocomposite resonant frequency. Defect modes have characteristics strongly dependent on the magnitude and the sign of the phase difference of the cholesteric helix on both sides of the defect layer. It has been found that the band gap width and the position and localization degree of defect modes can be effectively controlled by external fields applied to the cholesteric.

  14. Photonic defect modes in a cholesteric liquid crystal with a resonant nanocomposite layer and a twist defect.

    Science.gov (United States)

    Vetrov, Stepan Ya; Pyatnov, Maxim V; Timofeev, Ivan V

    2014-09-01

    We have studied spectral properties of a cholesteric liquid crystal with a combined defect consisting of a nanocomposite layer and a twist. The nanocomposite layer is made of metallic nanoballs dispersed in a transparent matrix and featuring effective resonant permittivity. A solution has been found for the transmission spectrum of circularly polarized waves in the structure. We have analyzed spectral splitting of the defect mode in the band gap of the cholesteric when its frequency coincides with the nanocomposite resonant frequency. Defect modes have characteristics strongly dependent on the magnitude and the sign of the phase difference of the cholesteric helix on both sides of the defect layer. It has been found that the band gap width and the position and localization degree of defect modes can be effectively controlled by external fields applied to the cholesteric.

  15. Method for the growth of large low-defect single crystals

    Science.gov (United States)

    Powell, J. Anthony (Inventor); Neudeck, Philip G. (Inventor); Trunek, Andrew J. (Inventor); Spry, David J. (Inventor)

    2008-01-01

    A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.

  16. Study on defects associated with interstitial oxygen in PbWO4 crystal

    Institute of Scientific and Technical Information of China (English)

    Liu Feng-song; Gu Mu; Zhang Rui

    2004-01-01

    The defects associated with interstitial oxygen in lead tungstate crystals (PbWO4) are investigated by the relativistic self-consistent discrete variational embedded cluster method. The research work is focused on the density of states of interstitial oxygen defects and relational Frankel defects. The transition state method is used to calculate excitation energy of different electron orbits. Simulation results show that the existence of defects related to interstitial oxygen can diminish the bandwidth of the WO2-4 group, and it might produce the green luminescence. Frankel defects associated with interstitial oxygen could result in the absorption at 420nm.

  17. On-line monitoring of the crystallization process: relationship between crystal size and electrical impedance spectra

    Science.gov (United States)

    Zhao, Yanlin; Yao, Jun; Wang, Mi

    2016-07-01

    On-line monitoring of crystal size in the crystallization process is crucial to many pharmaceutical and fine-chemical industrial applications. In this paper, a novel method is proposed for the on-line monitoring of the cooling crystallization process of L-glutamic acid (LGA) using electrical impedance spectroscopy (EIS). The EIS method can be used to monitor the growth of crystal particles relying on the presence of an electrical double layer on the charged particle surface and the polarization of double layer under the excitation of alternating electrical field. The electrical impedance spectra and crystal size were measured on-line simultaneously by an impedance analyzer and focused beam reflectance measurement (FBRM), respectively. The impedance spectra were analyzed using the equivalent circuit model and the equivalent circuit elements in the model can be obtained by fitting the experimental data. Two equivalent circuit elements, including capacitance (C 2) and resistance (R 2) from the dielectric polarization of the LGA solution and crystal particle/solution interface, are in relation with the crystal size. The mathematical relationship between the crystal size and the equivalent circuit elements can be obtained by a non-linear fitting method. The function can be used to predict the change of crystal size during the crystallization process.

  18. Enhancement of below gap transmission of InAs single crystal via suppression of native defects

    Science.gov (United States)

    Shen, Guiying; Zhao, Youwen; Dong, Zhiyuan; Liu, Jingming; Xie, Hui; Bai, Yongbiao; Chen, Xiaoyu

    2017-03-01

    As-grown and annealed undoped n type InAs single crystals have been studied by Hall effect measurement, infrared transmission (IR) spectroscopy, photoluminescence spectroscopy (PL) and glow discharge mass spectroscopy (GDMS). After annealing, below-gap infrared transmittance of the InAs single crystal increases significantly with the annihilation of a 0.383 eV PL peak related defect. Mechanism of the transmission enhancement and the attribution of the defect is discussed based on the experimental results.

  19. Defects in Nonlinear Elastic Crystals: Differential Geometry, Finite Kinematics, and Second-Order Analytical Solutions

    Science.gov (United States)

    2015-04-01

    of dislocations in anisotropic crystals, Int. J. Eng. Sci. 5, 171–190 (1967). [92] A. Yavari and A. Goriely, Riemann -Cartan geometry of nonlinear...distributed point defects, Proc. R. Soc. Lond. A 468, 3902–3922 (2012). [94] A. Yavari and A. Goriely, Riemann -Cartan geometry of nonlinear disclination...ARL-RP-0522 ● APR 2015 US Army Research Laboratory Defects in Nonlinear Elastic Crystals: Differential Geometry , Finite

  20. The Effect of RDX Crystal Defect Structure on Mechanical Response of a Polymer-Bonded Explosive

    Science.gov (United States)

    2015-11-09

    deformation [a] R. H. B. Bouma Department Process Instrumentation and Design TNO, Organisation for Applied Scientific Research P.O. Box 6012 2600 JA, Delft, The...DOI: 10.1002/prep.201500222 The Effect of RDX Crystal Defect Structure on Mechanical Response of a Polymer-Bonded Explosive Richard H. B. Bouma[a...systematically varied by using three different qualities of Class I RDX. The effect of internal defect structure of the RDX crystal on the shock

  1. Algebraic approach to multiple defects on the line and application to Casimir force

    CERN Document Server

    Mintchev, M

    2007-01-01

    An algebraic framework for quantization in presence of arbitrary number of point-like defects on the line is developed. We consider a scalar field which interacts with the defects and freely propagates away of them. As an application we compute the Casimir force both at zero and finite temperature. We derive also the charge density in the Gibbs state of a complex scalar field with defects. The example of two delta-defects is treated in detail.

  2. Calculation of the Point Defects Ensemble in Zinc Sulfide Single Crystals and Films

    Directory of Open Access Journals (Sweden)

    D.I. Kurbatov

    2012-11-01

    Full Text Available In work calculation of concentration of the neutral and charged point defects, positions of Fermi level and free charge carriers in zinc sulfide single crystals and films depending on their condensation conditions was carried out. For calculations used the experimentally found energy levels of defects in ZnS band gap.

  3. Characterization for defect modes of one-dimensional photonic crystals containing metamaterials

    Institute of Scientific and Technical Information of China (English)

    Ling Tang; Lei Gao; Jianxing Fang

    2008-01-01

    Transmission studies for one-dimensional photonic crystals(1DPCs)containing single-negative(SNG)materials inserted with multiple defects are presented.The numbers and positions of the defect modes inside zero-phase(zero-φeff)gap are found to be well characterized by effective medium theory.

  4. Spin-wave dispersion of nanostructured magnonic crystals with periodic defects

    Science.gov (United States)

    Zhang, V. L.; Lim, H. S.; Ng, S. C.; Kuok, M. H.; Zhou, X.; Adeyeye, A. O.

    2016-11-01

    The spin-wave dispersions in nanostructured magnonic crystals with periodic defects have been mapped by Brillouin light scattering. The otherwise perfect crystals are one-dimensional arrays of alternating 460nm-wide Ni80Fe20 stripes and 40nm-wide air gaps, where one in ten Ni80Fe20 stripes is a defect of width other than 460 nm. Experimentally, the defects are manifested as additional Brillouin peaks, lying within the first and second bandgaps of the perfect crystal, whose frequencies decrease with increasing defect stripe width. Finite-element calculations, based on a supercell comprising one defect and nine perfect Py stripes, show that the defect modes are localized about the defects, with the localization exhibiting an approximate U-shaped dependence on defect size. Calculations also reveal extra magnon branches and the opening of mini-bandgaps, within the allowed bands of the perfect crystal, arising from Bragg reflections at the boundaries of the shorter supercell Brillouin zone. Simulated magnetization profiles of the band-edge modes of the major and mini-bandgaps reveal their different symmetries and localization properties. The findings could find application in microwave magnonic devices like single-frequency passband spin-wave filters.

  5. Effects of quasi-periodicity on defect modes of photonic crystals

    Institute of Scientific and Technical Information of China (English)

    SHEN Xiao-ming; CHEN Xian-feng; JIANG Mei-ping; CHAO Xiao-gang; SHI Du-fang

    2006-01-01

    In this letter,the effects of Bragg-mirror quasi-periodicity on the shifts and quality factor in defect modes of photonic crystals are studied by using the transfer matrix method.Furthermore the influence of the quasi-periodicity on electric field enhancement effect inside the defect layer is studied,which is similar to that on the quality factor.

  6. Tunable defect modes in 2D photonic crystals by means of external magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Soltani Vala, A., E-mail: asoltani@tabrizu.ac.i [Physics Department, University of Tabriz, Tabriz (Iran, Islamic Republic of); Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz (Iran, Islamic Republic of); Rezaei, B. [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz (Iran, Islamic Republic of); Kalafi, M. [Physics Department, University of Tabriz, Tabriz (Iran, Islamic Republic of); Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz (Iran, Islamic Republic of)

    2010-07-15

    We investigate the tunable defect modes in 2D photonic crystal of silicon rods in air background in which one of the rods is replaced by ferrite material and an external static magnetic field is applied in the ferrite rod direction. Using the supercell method, the dependence of E-polarized defect modes on the magnetic field has been reported.

  7. Calculation of the Point Defects Ensemble in Zinc Sulfide Single Crystals and Films

    OpenAIRE

    D.I. Kurbatov

    2012-01-01

    In work calculation of concentration of the neutral and charged point defects, positions of Fermi level and free charge carriers in zinc sulfide single crystals and films depending on their condensation conditions was carried out. For calculations used the experimentally found energy levels of defects in ZnS band gap.

  8. Design and Analysis of Microstrip Multi-Channeled Filter Using Photonic Crystal Branchy Defect

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A multi-channeled filter based on branchy defect in a microstrip photonic crystal was proposed. By introducing a branchy structure across the defect region, multiple defect modes will appear inside the photonic gap, leading to the multi-channeled filtering phenomenon. In comparison with the conventional multi-channeled filters, the proposed structure is more compact and tunable as far as the device volume and fabrication are concerned. The microwave experiment results are found in agreement with simulation results.

  9. Yield Improvement and Advanced Defect Control——Driving Forces for Modeling of Bulk Crystal Growth

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Yield improvement and advanced defect control can be identified as the driving forces for modeling of industrial bulk crystal growth. Yield improvement is mainly achieved by upscaling of the whole crystal growth apparatus and increased processing windows with more tolerances for parameter variations. Advanced defect control means on one hand a reduction of the number of deficient crystal defects and on the other hand the formation of beneficial crystal defects with a uniform distribution and well defined concentrations in the whole crystal. This "defect engineering" relates to the whole crystal growth process as well as the following cooling and optional annealing processes, respectively. These topics were illustrated in the paper by examples of modeling and experimental results of bulk growth of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP) and calcium fluoride (CaF2). These examples also involve the state of the art of modeling of the most important melt growth techniques, crystal pulling (Czochralski methods) and vertical gradient freeze (Bridgman-type methods).

  10. Conductivity of epitaxial and CVD graphene with correlated line defects

    DEFF Research Database (Denmark)

    Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

    2014-01-01

    Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due to ...

  11. Radiation effect on domain and defect structure of BaTiO3 crystals

    Science.gov (United States)

    Fesenko, Evgeni G.; Lisinska-Czekaj, Agata; Czekaj, Dionizy; Surowiak, Zygmunt

    2003-10-01

    BaTiO3 single crystals were obtained by Remeika-method from solutions of melted salts and oxides. Radioactive Co60 isotope was employed as a source of γ-radiation. Three different radiation doses were applied: 1.2 x 107 rad, 3.0 x 108 rad, and 1.3 x 107 rad. Temperature of single crystals during irradiation did not exceed 313 K. A few batches of crystals were subjected to irradiation, namely: single crystals with natural surface (after the crystal was grown), single crystals with the etched surface layer and single crystals which had been subjected to an influence of the strong direct and alternating electric fields before exposure. Both domain and defect structure of single crystals was investigated by the etching method, decorating method, optical microscopy and scanning electron microscopy. It has been found that irradiation causes destabilization of the domain walls of the head-to-head-type with a negative charge screening spontaneous polarization (Ps). The negative domains in a positive matrix, which did not grow through the whole crystal body, were found to decay under the influence of radiation. In a place previously occupied by decaying negative domains, defect clusters are observed. The investigations have shown that there is a close correlation between the domain structure and the defect structure of BaTiO3 crystals.

  12. How Modelling of Crystal Defects at the Atomic Scale can Provide Information on Seismic Anisotropy

    Science.gov (United States)

    Cordier, P.; Carrez, P.; Goryaeva, A.; Gouriet, K.; Hirel, P.; Kraych, A.; Ritterbex, S.

    2014-12-01

    Seismic anisotropy represents one of the few sources of information about flow in the mantle that takes place at timescales that are barely accessible at human timescales. Seismic waves travelling through rocks at the speed of sound can reveal flow lines frozen in rocks over hundreds of million years. The interpretation of seismic anisotropy also needs to bridge length-scales since crystal defects are responsible for the plastic anisotropy that align crystals in a deforming rock thus revealing elastic anisotropy at the macroscopic scale. Knowing the easiest slip systems for a given crystal structure is thus the fundamental information needed. To obtain it we propose the following approach based on multiscale numerical modeling. As a first approach, we calculate generalized stacking faults which inform us about the easiest shear paths imposed by the crystal chemistry. This leads to a short list of potential slip systems for which lattice friction will be calculated. A further selection will be done by modeling the core structures of screw dislocations. The tendency for core spreading of screw dislocations impose a selection on potential glide planes which is further validated by modeling corresponding edge dislocations and their respective mobilities. Finally, we model the mobility of these dislocations under the conjugate influence of stress and temperature using the kink-pair model which is based on the activation enthalpy of the critical configuration which allows a dislocation to glide from one stable position to the next. The output of this model is the so-called critical resolved shear stress which is the onset of plastic glide at a given temperature and strain rate. Comparison between slip systems provides constraints on the plastic anisotropy. Examples are presented among the major phases of the Earth's mantle.

  13. Microscopic Characterization of Defect Structure in RDX Crystals

    Science.gov (United States)

    2013-10-09

    crystals in composition PBXN-109 (Doherty & Watt, 2008), crystal density and impurity content, that is, HMX by HPLC, cyclohexanone and acetone by GC for...kbar) 50.6 38.6 53.3 ρcrystal (g cm−3) 1.795 1.804 1.794 HMX (%) 0.19 8.55 0.02 Cyclohexanone (‰) 0.72/0.87 0.00/0.01 0.58/0.69 Acetone (‰) 0.00/0.049... cyclohexanone and ace- tone are indicative of the solvents used in the crystallization processes. Sample preparation Samples are prepared by embedding

  14. Selective sulfur dioxide adsorption on crystal defect sites on an isoreticular metal organic framework series

    Science.gov (United States)

    Rodríguez-Albelo, L. Marleny; López-Maya, Elena; Hamad, Said; Ruiz-Salvador, A. Rabdel; Calero, Sofia; Navarro, Jorge A. R.

    2017-02-01

    The widespread emissions of toxic gases from fossil fuel combustion represent major welfare risks. Here we report the improvement of the selective sulfur dioxide capture from flue gas emissions of isoreticular nickel pyrazolate metal organic frameworks through the sequential introduction of missing-linker defects and extra-framework barium cations. The results and feasibility of the defect pore engineering carried out are quantified through a combination of dynamic adsorption experiments, X-ray diffraction, electron microscopy and density functional theory calculations. The increased sulfur dioxide adsorption capacities and energies as well as the sulfur dioxide/carbon dioxide partition coefficients values of defective materials compared to original non-defective ones are related to the missing linkers enhanced pore accessibility and to the specificity of sulfur dioxide interactions with crystal defect sites. The selective sulfur dioxide adsorption on defects indicates the potential of fine-tuning the functional properties of metal organic frameworks through the deliberate creation of defects.

  15. Process induced disorder in crystalline materials: differentiating defective crystals from the amorphous form of griseofulvin.

    Science.gov (United States)

    Feng, Tao; Pinal, Rodolfo; Carvajal, M Teresa

    2008-08-01

    This research investigates milling induced disorder in crystalline griseofulvin. Griseofulvin was subjected to cryogenic milling for various lengths of time. For comparison, the amorphous form of griseofulvin was also prepared by the quench melt method. Different analytical techniques were used to study the differences between the cryomilled, amorphous and crystalline forms of the drug. Cryogenic milling of griseofulvin progressively reduces the crystallinity of the drug by inducing crystal defects, rather than amorphous materials. Raman analysis provides evidence of structural differences between the two. The differences between the defective crystals produced by milling and the amorphous form are significant enough as to be measurable in their bulk thermal properties. Defective crystals show significant decrease in the heat of fusion as a function of milling time but do not exhibit a glass transition nor recrystallization from the amorphous form. Crystal defects undergo recrystallization upon heating at temperatures well below the glass transition temperature (T(g)) in a process that is separate and completely independent from the crystallization of the amorphous griseofulvin, observed above T(g). Physical mixtures of defective crystals and amorphous drug demonstrate that the thermal events associated with each form persist in the mixtures, unaffected by the presence of the other form.

  16. Finite particle size drives defect-mediated domain structures in strongly confined colloidal liquid crystals

    Science.gov (United States)

    Gârlea, Ioana C.; Mulder, Pieter; Alvarado, José; Dammone, Oliver; Aarts, Dirk G. A. L.; Lettinga, M. Pavlik; Koenderink, Gijsje H.; Mulder, Bela M.

    2016-06-01

    When liquid crystals are confined to finite volumes, the competition between the surface anchoring imposed by the boundaries and the intrinsic orientational symmetry-breaking of these materials gives rise to a host of intriguing phenomena involving topological defect structures. For synthetic molecular mesogens, like the ones used in liquid-crystal displays, these defect structures are independent of the size of the molecules and well described by continuum theories. In contrast, colloidal systems such as carbon nanotubes and biopolymers have micron-sized lengths, so continuum descriptions are expected to break down under strong confinement conditions. Here, we show, by a combination of computer simulations and experiments with virus particles in tailor-made disk- and annulus-shaped microchambers, that strong confinement of colloidal liquid crystals leads to novel defect-stabilized symmetrical domain structures. These finite-size effects point to a potential for designing optically active microstructures, exploiting the as yet unexplored regime of highly confined liquid crystals.

  17. Restoration of defects generated on the DAST crystal surface by scanning with AFM cantilever tip

    Energy Technology Data Exchange (ETDEWEB)

    Nanjo, Hiroshi; Komatsu, Kyoji; Suzuki, Toshishige M

    2004-10-01

    We have developed a simple method to restore the defects and holes generated on the (001) surface of 4-(4-Dimethylaminostyryl)-1-methylpyridinium tosylate (DAST) crystal by scanning the crystal with a cantilever tip of an atomic force microscope (AFM). The change in the surface morphology upon repeated scan process was followed by AFM observation at appropriate intervals. By adjustment of applied force on the cantilever, molecular-scale flatness on the crystal surface was restored. We proposed the following mechanism for the restoration: AFM tip carries the small fragment of DAST near step-edge and fills the holes or defects on the surface. After several times scanning of the AFM tip with the fragment, the defect-free surface was restored on the DAST crystal by filling the fragment in satisfying the ionic interaction around the holes.

  18. Growth Defects in Cubic KTa1-xNbxO3 Crystal

    Institute of Scientific and Technical Information of China (English)

    WANG Xu-Ping; WANG Ji-Yang; WU-Jian; YU Yong-Gui; ZHANG Huai-Jin

    2008-01-01

    Potassium tantalate niobate(KTa1-x NbxO3,KTN)crystals with different dimensions and quality situations were grown by Czochralski method.Crystal growth process and morphology properties of KTN are presented in this paper.It was found that some defects,such as bubble,inclusion,crack,dislocation etc.,can all appear if the crystal is grown in an improper condition.The character and formation mechanism of such defects in macro growth are discussed.We consider that the CO2,which Was not released absolutely during the sintering process and dissolved in the melt,led to bubbles.The composition of the inclusion caused by high pulling and rotation rates is KTN polycrystalline.The crack and dislocation in KTN crystal mainly come from improper temperature field.Etching and high-resolution X-ray diffraction(HRXRD)experiment results indicate that the central area is the defects concentrated.

  19. Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy

    CERN Document Server

    Han, S H; Dai, Y; Zhang, Y; Zhang, H; Zhao, Y

    2002-01-01

    High quality Bi sub 2 Sr sub 2 CaCu sub 2 sub - sub x Mo sub x O sub y (x = 0, 0.01 and 0.02) single crystals have been grown by a self-flux method in a horizontal temperature gradient and their flux pinning and irreversibility behaviour have been investigated. The irreversibility lines of the undoped and Mo-doped Bi2212 crystals have been greatly improved by reducing the anisotropy parameter gamma. However, this improvement is much more pronounced for Mo-doped crystals than for the undoped ones. The peak effect of magnetization loops also changes with both Mo-doping and gamma. The results provide strong evidence that the point defect pinning served by Mo is greatly enhanced when the anisotropy of the system is reduced.

  20. Ion channeling study of defects in compound crystals using Monte Carlo simulations

    Energy Technology Data Exchange (ETDEWEB)

    Turos, A., E-mail: turos@fuw.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); National Centre for Nuclear Research, Andrzeja Soltana 7, 05-400 Otwock (Poland); Jozwik, P. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); National Centre for Nuclear Research, Andrzeja Soltana 7, 05-400 Otwock (Poland); Nowicki, L. [National Centre for Nuclear Research, Andrzeja Soltana 7, 05-400 Otwock (Poland); Sathish, N. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

    2014-08-01

    Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO{sub 3}) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

  1. Ion channeling study of defects in compound crystals using Monte Carlo simulations

    Science.gov (United States)

    Turos, A.; Jozwik, P.; Nowicki, L.; Sathish, N.

    2014-08-01

    Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO3) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

  2. Microstructure and defects probed by Raman spectroscopy in lithium niobate crystals and devices

    Energy Technology Data Exchange (ETDEWEB)

    Fontana, Marc D.; Bourson, Patrice [Laboratoire Matériaux Optiques, Photonique et Systèmes, LMOPS, Université de Lorraine and CentraleSupelec, 2 rue E. Belin, 57070 Metz (France)

    2015-12-15

    Raman microprobe applied on LiNbO{sub 3} (LN) crystals and derived materials or devices is shown to be a tool to detect either local variations or changes of the whole structure. Position, width, or intensity of one Raman line can be used as markers of a structural change. Indeed, each Raman line can be assigned to a peculiar ionic motion and is differently sensitive to application of strain, temperature change, and electric field. Some vibrational modes are especially associated to the site of Li ion, or Nb ion, or still oxygen octahedron, so that they can be affected by the introduction of dopant ion on one or another site. Therefore, Raman Spectroscopy (RS) can be used as a site spectroscopy to describe the mechanism of doping incorporation in the LN lattice, allowing the optimization of some linear and non-linear optical properties according to the dopant concentration and substitution site. The composition or the content of non-stoichiometry related defects could be derived from the width of some lines. Any damage or local disorder can be detected by a line broadening. The quality or preservation of the structure after chemical treatment, or laser pulses, can be thus checked. The structure of ion-implanted or proton-exchanged wave-guides and periodically poled lithium niobate as well can be imaged from frequency shift or intensity change of some lines. RS is thus a useful way to control the structure of LN and/or to optimize the preparation parameters and its properties.

  3. Beam splitting at the output of photonic crystal waveguides with discrete surface point defects.

    Science.gov (United States)

    Wang, Qi; Zhang, Lanlan; Li, Qi

    2010-11-08

    With the method of adding two point defects on modulated surface, novel photonic crystal (PC) waveguide-based beam splitters were presented. The modulated surface layer supports surface states, and introduced discrete point defects can serve as discrete light emitters. The finite-difference time-domain (FDTD) simulations show that the number of beams is sensitive to the distance of two point defects. By adjusting the positions of the point defects, 1-to-N beam splitters can be realized. These simple, easy-to-fabricate and controllable structures have important potential applications in integrated optical circuits.

  4. Topological Structure of Knotted Vortex Lines in Liquid Crystals

    Institute of Scientific and Technical Information of China (English)

    DUAN Yi-Shi; ZHAO Li; ZHANG Xin-Hui

    2007-01-01

    In this paper, a novel decomposition expression for the U(1) gauge field in liquid crystals (LCs) is derived.Using this decomposition expression and the φ-mapping topological current theory,.we investigate the topological structure of the vortex lines in LCs in detail. A topological invariant, i.e., the Chern-Simons (CS) action for the knotted vortex lines is presented, and the CS action is shown to be the total sum of all the self-linking and linking numbers of the knot family. Moreover, it is pointed out that the CS action is preserved in the branch processes of the knotted vortex lines.

  5. Orientational defects near colloidal particles in a nematic liquid crystal.

    Science.gov (United States)

    Feng, James J; Zhou, Chixing

    2004-01-01

    We study the interaction between a surface-anchoring colloidal particle and a liquid-crystalline host, and in particular the formation of orientational defects near the particle. A mean-field theory based on the nonlocal Marrucci-Greco nematic potential is used to represent molecular interactions in an inhomogeneous orientational field. An evolution equation for the molecular configuration tensor is solved numerically whose steady state minimizes the total free energy of the system. With strong homeotropic anchoring on the particle surface, three types of solutions may appear depending on initial conditions and particle size: Saturn rings, satellite point defects, and polar rings. The Saturn ring remains stable on micrometer-sized particles, contrary to previous calculations but consistent with experiments. A phase diagram is constructed for the three regimes. Based on the free energy, the most stable state is the Saturn ring for smaller particles and the satellite defect for larger ones.

  6. Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals

    CERN Document Server

    Dyer, Gregory C; Allen, S James; Grine, Albert D; Bethke, Don; Reno, John L; Shaner, Eric A

    2016-01-01

    Photonic crystals and metamaterials have emerged as two classes of tailorable materials that enable precise control of light. Plasmonic crystals, which can be thought of as photonic crystals fabricated from plasmonic materials, Bragg scatter incident electromagnetic waves from a repeated unit cell. However, plasmonic crystals, like metamaterials, are composed of subwavelength unit cells. Here, we study terahertz plasmonic crystals of several periods in a two dimensional electron gas. This plasmonic medium is both extremely subwavelength ($\\approx \\lambda/100$) and reconfigurable through the application of voltages to metal electrodes. Weakly localized crystal surface states known as Tamm states are observed. By introducing an independently controlled plasmonic defect that interacts with the Tamm states, we demonstrate a frequency agile electromagnetically induced transparency phenomenon. The observed 50% ${\\it in-situ}$ tuning of the plasmonic crystal band edges should be realizable in materials such as graph...

  7. Topological defects in liquid crystals as templates for molecular self-assembly

    Science.gov (United States)

    Wang, Xiaoguang; Miller, Daniel S.; Bukusoglu, Emre; de Pablo, Juan J.; Abbott, Nicholas L.

    2016-01-01

    Topological defects in liquid crystals (LCs) have been widely used to organize colloidal dispersions and template polymerization, leading to a range of assemblies, elastomers and gels. However, little is understood about molecular-level assembly processes within defects. Here, we report that nanoscopic environments defined by LC topological defects can selectively trigger processes of molecular self-assembly. By using fluorescence microscopy, cryogenic transmission electron microscopy and super-resolution optical microscopy, we observed signatures of molecular self-assembly of amphiphilic molecules in topological defects, including cooperativity, reversibility and controlled growth. We also show that nanoscopic o-rings synthesized from Saturn-ring disclinations and other molecular assemblies templated by defects can be preserved by using photocrosslinkable amphiphiles. Our results reveal that, in analogy to other classes of macromolecular templates such as polymer-surfactant complexes, topological defects in LCs are a versatile class of three-dimensional, dynamic and reconfigurable templates that can direct processes of molecular self-assembly.

  8. The effect of temperature on one-dimensional nanometallic photonic crystals with coupled defects

    Indian Academy of Sciences (India)

    ABDOLRASOUL GHARAATI; ZEINAB ZARE

    2017-05-01

    Using the transfer matrix method, the effect of temperature on one-dimensional (1D) nanostructure photonic crystal with coupled defects has been investigated. One of the layers of this structure is silver. The complex refractive index of silver is dependent on temperature and wavelength. This structure is tunable with temperature and incident angle. It is found that the number of defect modes is equal to the number of coupled defects in all incident angles for both polarizations. Also by increasing the temperature, due to dissipation, the wavelength of the defect modes increases and the height of the defect modes decreases. The wavelengths of defect modes depend linearly on temperature for both polarizations in all incident angles.

  9. Crystal growth, defects, and mechanical and spectral properties of a novel mixed laser crystal Nd:GdYNbO4

    Science.gov (United States)

    Ding, Shoujun; Liu, Wenpeng; Zhang, Qingli; Peng, Fang; Luo, Jianqiao; Dou, Renqin; Sun, Guihua; Sun, Dunlu

    2017-01-01

    A mixed laser crystal of Nd-doped GYNO crystal was grown successfully by Czochralski method. The crystal belongs to monoclinic system with space group I2/a, the structural parameters are obtained by the X-ray Rietveld refinement method. The defects and dislocations along three crystallographic orientations were studied by using the chemical etching method with the phosphoric acid etchant. The mechanical properties (including hardness, yield strength, fracture toughness, and brittle index) of the crystal were estimated by Vickers hardness test. The transmission spectrum was measured at room temperature, and the absorption peaks were assigned. Spectral properties of the as-grown crystal were investigated by Judd-Ofelt theory, and the Judd-Ofelt intense parameters Ω2,4,6 were obtained to be 9.674 × 10-20, 2.092 × 10-20, and 4.061 × 10-20 cm2, respectively.

  10. Influence of Containment on Defects in GeSi Crystals

    Science.gov (United States)

    Volz, M. P.; Croell, A.; Mazuruk, K.

    2009-01-01

    Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10(exp -5) m. A small meniscus bridges the gap between the top of the crystal and the wall. Key parameters involved in achieving detached growth are the contact angle between the melt and crucible and the pressure differential across the meniscus. Sessile drop measurements were used to determine the wetting angles of Ge(sub 1-x)Si(sub x) melts on a variety of substrates and found that the highest wetting angles were achieved with pyrolitic boron nitride (pBN). GeSi crystals have been repeatedly grown detached in pBN crucibles but only occasionally in crucibles with lower wetting angles. Experiments have been conducted to assess the effect of pressure differential across the meniscus in sealed crucibles. This was done by adjusting the temperature profile after partial melting of the starting material. In a separate set of experiments, the pressure was controlled by connecting the volume below the meniscus to a regulated gas supply. The experiments were in agreement with calculations which predicted that stable detachment will only occur in crucibles with a low wetting angle over a relatively narrow range of pressure differential. Detached-grown crystals exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  11. Disclination lines at homogeneous and heterogeneous colloids immersed in a chiral liquid crystal.

    Science.gov (United States)

    Melle, Michael; Schlotthauer, Sergej; Hall, Carol K; Diaz-Herrera, Enrique; Schoen, Martin

    2014-08-14

    In the present work we perform Monte Carlo simulations in the isothermal-isobaric ensemble to study defect topologies formed in a cholesteric liquid crystal due to the presence of a spherical colloidal particle. Topological defects arise because of the competition between anchoring at the colloidal surface and the local director. We consider homogeneous colloids with either local homeotropic or planar anchoring to validate our model by comparison with earlier lattice Boltzmann studies. Furthermore, we perform simulations of a colloid in a twisted nematic cell and discuss the difference between induced and intrinsic chirality on the formation of topological defects. We present a simple geometrical argument capable of describing the complex three-dimensional topology of disclination lines evolving near the surface of the colloid. The presence of a Janus colloid in a cholesteric host fluid reveals a rich variety of defect structures. Using the Frank free energy we analyze these defects quantitatively indicating a preferred orientation of the Janus colloid relative to the cholesteric helix.

  12. Defective urinary crystallization inhibition and urinary stone formation

    Directory of Open Access Journals (Sweden)

    Mauricio Carvalho

    2006-06-01

    Full Text Available INTRODUCTION: Nephrocalcin (NC is a glycoprotein produced in the kidney and inhibits calcium oxalate crystal formation. It has been separated into 4 isoforms (A, B, C, and D and found that (A + B are more abundant than (C + D in urine of healthy subjects, but the reverse is seen in human urine of kidney stone patients. To further examine the role of this protein in inhibition of urinary crystallization, nephrocalcin isoforms were purified from 2 genetically pure dog species. MATERIALS AND METHODS: We studied healthy Beagles, known to be non-stone forming dogs, and Mini-Schnauzers, known to be calcium oxalate stone formers. NC was isolated and purified from each group. Urinary biochemistry and calcium oxalate crystal growth inhibition were measured. RESULTS: Specific crystal growth inhibition activity was significantly higher in non-stone forming dogs (9.79 ± 2.25 in Beagles vs. 2.75 ± 1.34 of Mini-Schnauzers, p < 0.005. Dissociation constants toward calcium oxalate monohydrate were 10-fold different, with Beagles' isoforms being 10 times stronger inhibitors compare to those of Mini-Schnauzers'. Isoforms C + D of NC were the main isoforms isolated in stone-forming dogs. CONCLUSION: NC of these two species of dogs differently affects calcium oxalate crystallization and might have a role in determining ulterior urinary stone formation.

  13. Circular patterns of calcium oxalate crystals induced by defective Langmuir-Blodgett film

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The injury of the renal epithelial cell membrane can promote the nucleation of nascent crystals, as well as adhesion of crystals on it. It thus accelerates the formation of renal calculi. In this paper, the defective Langmuir-Blodgett(LB)films were used as a model system to simulate the injured renal epithelial cell membrane. The microcosmic structure of the defective LB film and the molecular mechanism of the effect of this film on nucleation, growth, deposited patterns and adhesion of calcium oxalate monohydrate(COM)were investigated. The circular defective domains were formed in dipalmitoylphosphatidylcholine(DPPC)LB film after the film was treated by potassium oxalate. These domains could induce ring-shaped patterns of COM crystals. In comparison, the LB film without pretreatment by potassium oxalate only induced random growth of hexagonal COM crystals. As the crystallization time increased, the size of COM crystals in the patterns increased, the crystal patterns changed from empty circles to solid circles, and the number of the circular patterns with small size(5-20μm)increased. The results would shed light on the molecular mechanism of urolithiasis induced by injury of the renal epithelial membrane at the molecular and supramolecular level.

  14. Circular patterns of calcium oxalate crystals induced by defective Langmuir-Blodgett film

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The injury of the renal epithelial cell membrane can promote the nucleation of nascent crystals, as well as adhesion of crystals on it. It thus accelerates the formation of renal calculi. In this paper, the defective Langmuir-Blodgett (LB) films were used as a model system to simulate the injured renal epithelial cell membrane. The microcosmic structure of the defective LB film and the molecular mechanism of the effect of this film on nucleation, growth, deposited patterns and adhesion of calcium oxalate monohydrate (COM) were investigated. The circular defective domains were formed in dipalmitoylphosphatidylcholine (DPPC) LB film after the film was treated by potassium oxalate. These domains could induce ring-shaped patterns of COM crystals. In comparison, the LB film without pretreatment by potassium oxalate only induced random growth of hexagonal COM crystals. As the crystallization time increased, the size of COM crystals in the patterns increased, the crystal patterns changed from empty circles to solid circles, and the number of the circular patterns with small size (5-20 μm) increased. The results would shed light on the molecular mechanism of urolithiasis induced by injury of the renal epithelial membrane at the molecular and supramolecular level.

  15. Investigation of defect cavities formed in three-dimensional woodpile photonic crystals

    CERN Document Server

    Taverne, Mike P C; Rarity, J G

    2014-01-01

    We report the optimisation of optical properties of single defects in threedimensional (3D) face-centred-cubic (FCC) woodpile photonic crystal (PC) cavities by using plane-wave expansion (PWE) and finite-difference time-domain (FDTD) methods. By optimising the dimensions of a 3D woodpile PC wide photonic band gaps (PBG) are created. Optical cavities with resonances in the bandgap arise when point defects are introduced in the crystal. Three types of single defects are investigated in high refractive index contrast (Gallium Phosphide-Air) woodpile structures and Q-factors and mode volumes (Veff) of the resonant cavity modes are calculated. We show that, by introducing an air buffer around a single defect, smaller mode volumes can be obtained. The estimates of Q and Veff are then used to quantify the enhancement of spontaneous emission and the possibility of achieving strong coupling with nitrogen-vacancy (NV) colour centres in diamond.

  16. Guiding, bending, and splitting of coupled defect surface modes in a surface-wave photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Zhen; Gao, Fei [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore 637371 (Singapore); Zhang, Baile, E-mail: blzhang@ntu.edu.sg [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore 637371 (Singapore); Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore 637371 (Singapore)

    2016-01-25

    We experimentally demonstrate a type of waveguiding mechanism for coupled surface-wave defect modes in a surface-wave photonic crystal. Unlike conventional spoof surface plasmon waveguides, waveguiding of coupled surface-wave defect modes is achieved through weak coupling between tightly localized defect cavities in an otherwise gapped surface-wave photonic crystal, as a classical wave analogue of tight-binding electronic wavefunctions in solid state lattices. Wave patterns associated with the high transmission of coupled defect surface modes are directly mapped with a near-field microwave scanning probe for various structures including a straight waveguide, a sharp corner, and a T-shaped splitter. These results may find use in the design of integrated surface-wave devices with suppressed crosstalk.

  17. Investigation of the crystal lattice defects by means of the positrons annihilations; Badania defektow sieci krystalicznej metoda anihilacji pozytonow

    Energy Technology Data Exchange (ETDEWEB)

    Dryzek, J. [Institute of Nuclear Physics, Cracow (Poland)

    1994-12-31

    In this report the positrons annihilation methods as a tool for the crystal defects studies is presented. The short description of the positron - crystal interactions and different positron capture models are discussed. 192 refs, 67 figs, 6 tabs.

  18. Properties of defect mode and optical enhancement of 1D photonic crystals with a defect layer of negative refractive index material

    Institute of Scientific and Technical Information of China (English)

    CHEN Xian-feng; SHEN Xiao-ming; JIANG Mei-ping; SHI Du-fang

    2005-01-01

    The band gap properties of one-dimensional photonic crystals with a defect layer of negative refractive index materials are studied.The defect mode width is bigger than that of conventional one-dimensional photonic crystals with a defect layer of positive refractive index materials.The defect mode of the former is different from that of the latter,shifts towards the direction of high frequency (short wavelength),and has a bigger shifting velocity.Furthermore the effects on the transmission properties of the former photonic crystals caused by change in the position of the defect layer of negative refractive index are investigated.Finally the optical enhancement of the former photonic crystals is also investigated.

  19. Optical diode behavior of photonic crystal structure with asymmetric Kerr defect

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field are the same for the forward and backward operations. In the nonlinear case, however, the transmitted intensities are much different for the two operations, which display diode characteristic. Physical origin of the anisotropic transmission lies in the different localizations in the defect layer of the two operations.

  20. Characterization of Growth Defects in Nd:YCa4O(BO3)3 Crystals by Transmission Synchrotron Topography

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The growth detects in Nd:YCa4O(BO3)3(Nd:YCOB) crystals were investigated by transmission synchrotron topography.It was found that growth striations were the primary defects in Nd:YCOB crystals.Grown-in dislocations.mosaic blocks and inclusions were also obsered in the crystals.The effect of temperature field on the formation of growth defects in the crystals was discussed.

  1. The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation

    CERN Document Server

    Galiy, P V

    1999-01-01

    The characteristics of defect accumulation and radiolysis at CsI crystals under mean energies of electron irradiation at wide dose rates and ranges of doses have been investigated by such methods: thermostimulated exoelectron emission (TSEE), Auger electron spectroscopy (AES) and optical absorption spectroscopy (OAS). The limit dose rates and absorbed doses of electron irradiation that lead to defects accumulation at room temperature in crystals volume and also surface stoichiometry violation have been evaluated. The doses of electron irradiation that lead to CsI radiolysis, with caesium coagulation in metallic phase have been determined. Some quasi periodic connection of such process with irradiation dose was observed.

  2. Optical Manipulation and Defect Creation in a Liquid Crystal on a Photo Responsive Surface (Preprint)

    Science.gov (United States)

    2017-01-25

    optical tweezers . Optics Express. 19, 24320 (2011). 7. M. Carrascosa, A. García-Cabañes, M. Jubera, J. B. Ramiro, F. Agulló-López, LiNbO3: A photovoltaic...AFRL-RX-WP-JA-2017-0236 OPTICAL MANIPULATION AND DEFECT CREATION IN A LIQUID CRYSTAL ON A PHOTO RESPONSIVE SURFACE (PREPRINT...December 2016 Interim 26 October 2015 – 16 November 2016 4. TITLE AND SUBTITLE OPTICAL MANIPULATION AND DEFECT CREATION IN A LIQUID CRYSTAL ON A

  3. Defect detection in LiNbO3 crystals using cross Nicol optical system with heating function

    Science.gov (United States)

    Hoshino, Yasushi; Shimizu, Hajime; Arishima, Koichi; Kozawaguchi, Haruki

    2017-07-01

    LiNbO3 crystals are important for applications such as optical devices and surface acoustic wave filters. However, defects in such crystals can negatively affect device characteristics. Consequently, control of defects is important during device manufacturing. In this study, a new defect detection method using a cross Nicol optical system with a heating function and defect image enhancement is proposed. Experiments confirmed that defects detected by this method correspond to those imaged by X-ray topography. It was found that additional defects are formed by charge induced during heating.

  4. Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography

    Science.gov (United States)

    2011-01-01

    We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously. PMID:21749704

  5. Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography

    Directory of Open Access Journals (Sweden)

    Kim Ki Seok

    2011-01-01

    Full Text Available Abstract We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

  6. Nematic liquid crystals on spherical surfaces: Control of defect configurations by temperature, density, and rod shape

    Science.gov (United States)

    Dhakal, Subas; Solis, Francisco J.; Olvera de la Cruz, Monica

    2012-07-01

    Recent experiments have shown that defect conformations in spherical nematic liquid crystals can be controlled through variations of temperature, shell thickness, and other environmental parameters. These modifications can be understood as a result of the induced changes in the effective elastic constants of the system. To characterize the relation between defect conformations and elastic anisotropy, we carry out Monte Carlo simulations of a nematic on a spherical surface. As the anisotropy is increased, the defects flow from a tetrahedral arrangement to two coalescing pairs and then to a great circle configuration. We also analyze this flow using a variational method based on harmonic configurations.

  7. Vortexlike topological defects in nematic colloids: chiral colloidal dimers and 2D crystals.

    Science.gov (United States)

    Tkalec, U; Ravnik, M; Zumer, S; Musevic, I

    2009-09-18

    We show that chiral ordering of the underlying complex fluid strongly influences defect formation and colloidal interactions. Nonsingular defect loops with a topological charge -2 are observed, with a cross section identical to hyperbolic vortices in magnetic systems. These loops are binding spontaneously formed pairs of colloidal particles and dimers, which are chiral objects. Chiral dimer-dimer interaction weakly depends on the chirality of dimers and leads to the assembly of 2D nematic colloidal crystals of pure or "mixed" chirality, intercalated with a lattice of nonsingular vortexlike defects.

  8. Remarkable crystal and defect structures in butterfly eye nano-nipple arrays.

    Science.gov (United States)

    Lee, Ken C; Erb, Uwe

    2015-11-01

    The corneal nipple structures on the eyes of two nymphalid butterfly species (Nymphalis antiopa and Polygonia interrogationis) are analyzed in terms of nipple arrangements and associated defects. The nipple arrays in both species have close-packed hexagonal lattices with lattice parameters of about 200 nm. The most abundant defects observed are 5-7 coordination defects that generate dislocations, dislocation-type low angle and structural unit-like high angle grain boundaries, as well as closed-loop defects. These disordered structures are compared with imperfections found in other 2D and 3D crystal structures, and it is concluded that the defects in the nipple arrays are likely not due to random growth accidents. Instead, they could be the result of geometric constraints due to eye curvature or serve a yet undiscovered purpose in the optical properties of these eyes.

  9. Subsurface defects structural evolution in nano-cutting of single crystal copper

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Yazhou [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liang, Yingchun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-07-30

    Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated.

  10. Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect

    Directory of Open Access Journals (Sweden)

    Kevin Lauer

    2015-01-01

    Full Text Available Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line was found to depend on the position of a silicon interstitial rich region, the existence of a SiNx:H/SiOx stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by ASi-Sii, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as InSi-Sii in neutral charge state and C2v configuration.

  11. Experimental testing and evaluation of cracks defects in line pipe

    Energy Technology Data Exchange (ETDEWEB)

    Hosseini, Ali; Cronin, Duane; Plumtree, Alan [University of Waterloo, Waterloo, Ontario (Canada); Kania, Richard [TransCanada Pipelines, Calgary, AB (Canada)

    2010-07-01

    Aging pipelines may show environmental or stress-induced cracking or similar defects. Several assessment methods are currently used for crack-like defects, as well as numerical modeling approaches. All have been used successfully, but unknown factors are the degree of conservatism and sensitivity to the various input parameters. To fill this knowledge gap, a series of full-scale burst tests was undertaken and successfully completed on end-capped, seam-welded pipe specimens having a 20-inch diameter and 5.7-mm wall thickness. The purpose was to study the failure behaviour of axial surface crack flaws and determine if the Level 3 FAD approach, NG-18 method and CorLAS can be applied to predict failure. The aspect of the fracture surface showed that the cause of failure of the pipe sections was ductile tearing, as expected in view of the material and crack sizes. It was found that the most accurate predictions were obtained with Level 3 FAD (J approach, using the cylinder equations) and CorLAS.

  12. Controlling Smectic Liquid Crystal Defect Patterns by Physical Stamping-Assisted Domain Separation and Their Use as Templates for Quantum Dot Cluster Arrays.

    Science.gov (United States)

    Ok, Jong Min; Kim, Yun Ho; Lee, Tae Yong; Yoo, Hae-Wook; Kwon, Kiok; Jung, Woo-Bin; Kim, Shin-Hyun; Jung, Hee-Tae

    2016-12-20

    Controlling the organization of self-assembling building blocks over a large area is crucial for lithographic tools based on the bottom-up approach. However, the fabrication of liquid crystal (LC) defect patterns with a particular ordering still remains a challenge because of the limited close-packed morphologies of LC defects. Here, we introduce a multiple-stamping domain separation method for the control of the dimensions and organization of LC defect structures. Prepatterns with various grid shapes on planar polyimide (PI) surfaces were fabricated by pressing a line-shaped stamp into the PI surfaces in two different directions, and then these surfaces were used to prepare LC defect structures confined to these grid domains. The dimensions of the LC defect structures, namely, the equilibrium diameter and the center to center spacing, are controlled by varying the line spacing of the stamps and the film thickness. A variety of arrangements of LC defects, including square, rhombic, hexagonal, and other oblique lattices, can be obtained by simply varying the stamping angle (Ω) between the first and second stamping directions. Furthermore, we demonstrate that the resulting controllable LC defect arrays can be used as templates for generating various patterns of nanoparticle clusters by trapping quantum dots (QDs) within the cores of the LC defects.

  13. Dynamically tunable graphene/dielectric photonic crystal transmission lines

    Science.gov (United States)

    Williamson, Ian; Mousavi, S. Hossein; Wang, Zheng

    2015-03-01

    It is well known that graphene supports plasmonic modes with high field confinement and lower losses when compared to conventional metals. Additionally, graphene features a highly tunable conductivity through which the plasmon dispersion can be modulated. Over the years these qualities have inspired a wide range of applications for graphene in the THz and infrared regimes. In this presentation we theoretically demonstrate a graphene parallel plate waveguide (PPWG) that sandwiches a 2D photonic crystal slab. The marriage of these two geometries offers a large two dimensional band gap that can be dynamically tuned over a very broad bandwidth. Our device operates in the low-THz band where the graphene PPWG supports a quasi-TEM mode with a relatively flat attenuation. Unlike conventional photonic crystal slabs, the quasi-TEM nature of the graphene PPWG mode allows the slab thickness to be less than 1/10 of the photonic crystal lattice constant. These features offer up a wealth of opportunities, including tunable metamaterials with a possible platform for large band gaps in 3D structures through tiling and stacking. Additionally, the geometry provides a platform for tunable defect cavities without needing three dimensional periodicity.

  14. Revealing of defects in CdTe crystals by DSL etching

    NARCIS (Netherlands)

    Bissoli, F.; Weyher, J.L.; Zappettini, A.; Zha, M.; Zanotti, L.

    2005-01-01

    The effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the

  15. The effect of RDX crystal defect structure on mechanical response of a polymer-bonded explosive

    NARCIS (Netherlands)

    Bouma, R.H.B.; Heijden, A.E.D.M. van der

    2016-01-01

    An explosive composition, derived from AFX-757, was systematically varied by using three different qualities of Class I RDX. The effect of internal defect structure of the RDX crystal on the shock sensitivity of a polymer bonded explosive is generally accepted (Doherty and Watt, 2008). Here the

  16. The Formation of Crystal Defects in a Fe-Mn-Si Alloy Under Cyclic Martensitic Transformations.

    Science.gov (United States)

    Bondar, Vladimir I; Danilchenko, Vitaliy E; Iakovlev, Viktor E

    2016-12-01

    Formation of crystalline defects due to cyclic martensitic transformations (CMT) in the iron-manganese Fe-18 wt.% Mn-2 wt.% Si alloy was investigated using X-ray diffractometry. Conditions for accumulation of fragment sub-boundaries with low-angle misorientations and chaotic stacking faults in crystal lattice of austenite and ε-martensite were analyzed.

  17. Coupled optical defect microcavities in one-dimensional photonic crystals and quasi-normal modes

    NARCIS (Netherlands)

    Maksimovic, Milan; Lohmeyer, Manfred; van Groesen, Embrecht W.C.

    2008-01-01

    We analyze coupled optical defect cavities realized in finite one-dimensional photonic crystals (PC). Viewing these as open systems, where waves are permitted to leave the structures, one obtains eigenvalue problems for complex frequencies (eigenvalues) and quasi-normal modes (QNM) (eigenfunctions).

  18. Coupled optical defect microcavities in 1D photonic crystals and quasi-normal modes

    NARCIS (Netherlands)

    Maksimovic, Milan; Lohmeyer, Manfred; van Groesen, Embrecht W.C.; Greiner, C.M.; Waechter, C.A.

    2008-01-01

    We analyze coupled optical defect cavities realized in finite one-dimensional Photonic Crystals. Viewing these as open systems where waves are permitted to leave the structures, one obtains eigenvalue problems for complex frequencies (eigenvalues) and Quasi-Normal-Modes (eigenfunctions). Single

  19. Fine structure of point defects and soliton decay in nematic liquid crystals

    OpenAIRE

    Penzenstadler, E.; Trebin, H. -R.

    1989-01-01

    On the basis of Landau-de Gennes-theory it is demonstrated that point defects in nematic liquid crystals may have a biaxial nonsingular core. From this result a critical diameter is derived for linear topological solitons in nematics. Solitons of smaller diameter can relax to the uniform nematic state without energy barrier via an intermediate biaxial phase.

  20. Revealing of defects in CdTe crystals by DSL etching

    NARCIS (Netherlands)

    Bissoli, F.; Weyher, J.L.; Zappettini, A.; Zha, M.; Zanotti, L.

    2005-01-01

    The effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the c

  1. Relation between the concentration of defects and the temperature on a crystal

    Energy Technology Data Exchange (ETDEWEB)

    Adorno, A.T.V.; Cilense, M. (UNESP, Araraquara (Brazil). Inst. de Quimica); Garlipp, W. (Sao Paulo Univ., Sao Carlos (Brazil). Escola de Engenharia)

    1982-01-01

    Following the basic thermodynamics principles, the relation between the concentration of defects and the temperature on a crystal was established. In the case of vacancies, the relation between the changes in the resistivity and the absolute quench temperature was also obtained.

  2. Design of Tunable Anisotropic Photonic Crystal Filter as Photonic Switch

    OpenAIRE

    Majid Seifan; Alireza Malekijavan; Alireza Monajati Kashani

    2014-01-01

    By creating point defects and line defects in photonic crystals, we reach the new sort of photonic crystals. Which allow us to design photonic crystals filters. In this type of photonic crystals the ability to tune up central frequency of filter is important to attention. In this paper, we use foregoing points for designing photonic crystal filters. The main function of this type of filters is coupling between shield of point defect modes and directional line defect modes. By using liquid cry...

  3. Investigation on defects in the high temperature inorganic scintillation single crystals of Ce:YAlO sub 3

    CERN Document Server

    Zhao Guang Jun; He Xiao Ming; Xu Jun; Tian Yu Lian; Huang Wan Xia

    2002-01-01

    The defects in Ce:YAlO sub 3 single crystals grown by Czochralski method were investigated by transmission white beam synchrotron radiation topography method. It was shown in experiments that the growth striations, inclusions precipitations, twins, core and dislocation group were the main growth defects in Ce:YAP single crystals. The mechanism of the defects formation was also discussed. The results showed that the doped concentration, purity of starting materials and growth conditions are the main causes for defects formation in Ce:YAP single crystals

  4. Morphological Analysis of White Cement Clinker Minerals: Discussion on the Crystallization-Related Defects.

    Science.gov (United States)

    Benmohamed, Mohamed; Alouani, Rabah; Jmayai, Amel; Ben Haj Amara, Abdesslem; Ben Rhaiem, Hafsia

    2016-01-01

    The paper deals with a formation of artificial rock (clinker). Temperature plays the capital role in the manufacturing process. So, it is useful to analyze a poor clinker to identify the different phases and defects associated with their crystallization. X-ray fluorescence spectroscopy was used to determine the clinker's chemical composition. The amounts of the mineralogical phases are measured by quantitative XRD analysis (Rietveld). Scanning electron microscopy (SEM) was used to characterize the main phases of white Portland cement clinker and the defects associated with the formation of clinker mineral elements. The results of a study which focused on the identification of white clinker minerals and defects detected in these noncomplying clinkers such as fluctuation of the amount of the main phases (alite (C3S) and belite (C2S)), excess of the free lime, occurrence of C3S polymorphs, and occurrence of moderately-crystallized structures are presented in this paper.

  5. Morphological Analysis of White Cement Clinker Minerals: Discussion on the Crystallization-Related Defects

    Directory of Open Access Journals (Sweden)

    Mohamed Benmohamed

    2016-01-01

    Full Text Available The paper deals with a formation of artificial rock (clinker. Temperature plays the capital role in the manufacturing process. So, it is useful to analyze a poor clinker to identify the different phases and defects associated with their crystallization. X-ray fluorescence spectroscopy was used to determine the clinker’s chemical composition. The amounts of the mineralogical phases are measured by quantitative XRD analysis (Rietveld. Scanning electron microscopy (SEM was used to characterize the main phases of white Portland cement clinker and the defects associated with the formation of clinker mineral elements. The results of a study which focused on the identification of white clinker minerals and defects detected in these noncomplying clinkers such as fluctuation of the amount of the main phases (alite (C3S and belite (C2S, excess of the free lime, occurrence of C3S polymorphs, and occurrence of moderately-crystallized structures are presented in this paper.

  6. Reversal of helicoidal twist handedness near point defects of confined chiral liquid crystals

    Science.gov (United States)

    Ackerman, Paul J.; Smalyukh, Ivan I.

    2016-05-01

    Handedness of the director twist in cholesteric liquid crystals is commonly assumed to be the same throughout the medium, determined solely by the chirality of constituent molecules or chiral additives, albeit distortions of the ground-state helicoidal configuration often arise due to the effects of confinement and external fields. We directly probe the twist directionality of liquid crystal director structures through experimental three-dimensional imaging and numerical minimization of the elastic free energy and show that spatially localized regions of handedness opposite to that of the chiral liquid crystal ground state can arise in the proximity of twisted-soliton-bound topological point defects. In chiral nematic liquid crystal confined to a film that has a thickness less than the cholesteric pitch and perpendicular surface boundary conditions, twisted solitonic structures embedded in a uniform unwound far-field background with chirality-matched handedness locally relieve confinement-imposed frustration and tend to be accompanied by point defects and smaller geometry-required, energetically costly regions of opposite twist handedness. We also describe a spatially localized structure, dubbed a "twistion," in which a twisted solitonic three-dimensional director configuration is accompanied by four point defects. We discuss how our findings may impinge on the stability of localized particlelike director field configurations in chiral and nonchiral liquid crystals.

  7. Enhancement Effect of Refractive Index Phase Shift Modulation Near Guided-wave Band Edge of Line-defect Photonic Crystal Waveguides%光子晶体线缺陷波导中的折射率相位移调制增强效应

    Institute of Scientific and Technical Information of China (English)

    陈兵; 唐天同

    2011-01-01

    In the phase shift modulation type optical components constructed by traditional dielectric waveguides with the low refractive index constant based on the total inner reflection mechanism,the length of the modulation region is usually millimeter or centimeter order of magnitude,while their horizontal size is micrometer of order of magnitude,therefore,the most typical characteristics of optical waveguide devices are long and narrow.Reducing the size of optical waveguide devices is a hard problem in the development of highly dense integrated optical circuits.The emergence of photonic crystals provides a new approach to develop highly dense integrated optical circuits.The plane wave expansion method is used to calculate the dispersion curves of the line-defect type photonic crystal waveguides.It is observed that there is a large change of wave prorogation constant near the guided-wave band edge,corresponding to a little change of refractive index of the material.If the work frequency is selected near the guided-wave band edge,the phase shift modulation length is expected to largely reduce.The finite-difference time-domain method is used to demonstrate the results above.Calculated results indicate that there is strong enhancement effect of refractive index phase shift modulation near guided-wave band edge:for the refractive index change of 0.46%,the phase shift modulation length in these waveguides is only 11.7% of that in conventional uniform dielectric material.This enhancement effect is originated from the special flat dispersion properties near the guide-wave band edge,and it is expected to be applied to high dense photonic integrated circuits after further research.%在传统的基于全内反射原理的低折射率比介质波导所构建的相位移调制型光学器件中,调制区域的长度通常在毫米到厘米量级.由于器件横向尺寸保持在微米量级,因此狭长结构成为了传统光波导器件的典型特征,这限制了光学器件集

  8. Annihilation dynamics of stringlike topological defects in a nematic lyotropic liquid crystal.

    Science.gov (United States)

    Guimarães, R R; Mendes, R S; Fernandes, P R G; Mukai, H

    2013-10-09

    Topological defects can appear whenever there is some type of ordering. Its ubiquity in nature has been the subject of several studies, from early Universe to condensed matter. In this work, we investigated the annihilation dynamics of defects and antidefects in a lyotropic nematic liquid crystal (ternary mixture of potassium laurate, decanol and deionized-destillated water) using the polarized optical light microscopy technique. We analyzed Schlieren textures with topological defects produced due to a symmetry breaking in the transition of the isotropic to nematic calamitic phase after a temperature quench. As result, we obtained for the distance D between two annihilating defects (defect-antidefect pair), as a function of time t remaining for the annihilation, the scaling law D ∝ t(α), with α = 0.390 and standard deviation σ = 0.085. Our findings go in the direction to extend experimental results related to dynamics of defects in liquid crystals since only thermotropic and polymerics ones had been investigated. In addition, our results are in good quantitative agreement with previous investigations on the subject.

  9. Kibble-Zurek Scaling during Defect Formation in a Nematic Liquid Crystal.

    Science.gov (United States)

    Fowler, Nicholas; Dierking, Dr Ingo

    2017-04-05

    Symmetry-breaking phase transitions are often accompanied by the formation of topological defects, as in cosmological theories of the early universe, superfluids, liquid crystals or solid-state systems. This scenario is described by the Kibble-Zurek mechanism, which predicts corresponding scaling laws for the defect density ρ. One such scaling law suggests a relation ρ≈τQ(-1/2) with τQ the change of rate of a control parameter. In contrast to the scaling of the defect density during annihilation with ρ≈t(-1) , which is governed by the attraction of defects of the same strength but opposite sign, the defect formation process, which depends on the rate of change of a physical quantity initiating the transition, has only rarely been investigated. Herein, we use nematic liquid crystals as a different system to demonstrate the validity of the predicted scaling relation for defect formation. It is found that the scaling exponent is independent of temperature and material employed, thus universal, as predicted. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Symmetric two dimensional photonic crystal coupled waveguide with point defect for optical switch application

    CERN Document Server

    Hardhienata, Hendradi

    2012-01-01

    Two dimensional (2D) photonic crystals are well known for its ability to manipulate the propagation of electromagnetic wave inside the crystal. 1D and 2D photonic crystals are relatively easier to fabricate than 3D because the former work in the microwave and far infrared regions whereas the later work in the visible region and requires smaller lattice constants. In this paper, simulation for a modified 2D PC with two symmetric waveguide channels where a defect is located inside one of the channel is performed. The simulation results show that optical switching is possible by modifying the refractive index of the defect. If more than one structure is applied this feature can potentially be applied to produce a cascade optical switch.

  11. Measuring nonlinear stresses generated by defects in 3D colloidal crystals

    CERN Document Server

    Lin, Neil Y C; Schall, Peter; Sethna, James P; Cohen, Itai

    2016-01-01

    The mechanical, structural and functional properties of crystals are determined by their defects and the distribution of stresses surrounding these defects has broad implications for the understanding of transport phenomena. When the defect density rises to levels routinely found in real-world materials, transport is governed by local stresses that are predominantly nonlinear. Such stress fields however, cannot be measured using conventional bulk and local measurement techniques. Here, we report direct and spatially resolved experimental measurements of the nonlinear stresses surrounding colloidal crystalline defect cores, and show that the stresses at vacancy cores generate attractive interactions between them. We also directly visualize the softening of crystalline regions surrounding dislocation cores, and find that stress fluctuations in quiescent polycrystals are uniformly distributed rather than localized at grain boundaries, as is the case in strained atomic polycrystals. Nonlinear stress measurements ...

  12. Wide Range Temperature Sensors Based on One-Dimensional Photonic Crystal with a Single Defect

    Directory of Open Access Journals (Sweden)

    Arun Kumar

    2012-01-01

    Full Text Available Transmission characteristics of one-dimensional photonic crystal structure with a defect have been studied. Transfer matrix method has been employed to find the transmission spectra of the proposed structure. We consider a Si/air multilayer system and refractive index of Si layer has been taken as temperature dependent. As the refractive index of Si layer is a function of temperature of medium, so the central wavelength of the defect mode is a function of temperature. Variation in temperature causes the shifting of defect modes. It is found that the average change or shift in central wavelength of defect modes is 0.064 nm/K. This property can be exploited in the design of a temperature sensor.

  13. Control of Intrinsic Defects in Lithium Niobate Single Crystal for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Rajeev Bhatt

    2017-01-01

    Full Text Available A single crystal of lithium niobate is an important optoelectronic material. It can be grown from direct melt only in a lithium deficient non-stoichiometric form as its stoichiometric composition exhibits incongruent melting. As a result it contains a number of intrinsic point defects such as Li-vacancies, Nb antisites, oxygen vacancies, as well as different types of polarons and bipolarons. All these defects adversely influence its optical and ferroelectric properties and pose a deterrent to the effective use of this material. Hence, controlling the defects in lithium niobate has been an exciting topic of research and development over the years. In this article we discuss the different methods of controlling the intrinsic defects in lithium niobate and a comparison of the effect of these methods on the crystalline quality, stoichiometry, optical absorption in the UV-vis region, electronic band-gap, and refractive index.

  14. Spectral properties of a one-dimensional photonic crystal with a resonant defect nanocomposite layer

    Energy Technology Data Exchange (ETDEWEB)

    Vetrov, S. Ya., E-mail: s.vetrov@inbox.ru; Avdeeva, A. Yu., E-mail: avdeeva-anstasiya@yandex.ru [Siberian Federal University (Russian Federation); Timofeev, I. V. [Russian Academy of Sciences, Kirensky Institute of Physics, Siberian Branch (Russian Federation)

    2011-11-15

    The spectral properties of a one-dimensional photonic crystal with a defect nanocomposite layer that consists of metallic nanoballs distributed in a transparent matrix and is characterized by an effective resonance permittivity are studied. The problem of calculating the transmission, reflection, and absorption spectra of p-polarized waves in such structures is solved for oblique incidence of light, and the spectral manifestation of defect-mode splitting as a function of the volume fraction of nanoballs and the structural parameters is studied. The splitting is found to depend substantially on the nanoball concentration in the defect, the defect layer thickness, and the angle of incidence. The angle of incidence is found at which the resonance frequency of the nanocomposite is located near the edge of the bandgap or falls in the frequency region of a continuous spectrum. The resonance situation appearing in this case results in an additional transmission band or an additional bandgap in the transmission spectrum.

  15. Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)

    Science.gov (United States)

    Talanin, V. I.; Talanin, I. E.

    2016-03-01

    Theoretical studies of defect formation in semiconductor silicon play an important role in the creation of breakthrough ideas for next-generation technologies. A brief comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out. Foundations of the diffusion model of the formation of structural imperfections during the silicon growth have been presented. It has been shown that the diffusion model is based on high-temperature precipitation of impurities. The model of high-temperature precipitation of impurities describes processes of nucleation, growth, and coalescence of impurities during cooling of a crystal from 1683 to 300 K. It has been demonstrated that the diffusion model of defect formation provides a unified approach to the formation of a defect structure beginning with the crystal growth to the production of devices. The possibilities of using the diffusion model of defect formation for other semiconductor crystals and metals have been discussed. It has been shown that the diffusion model of defect formation is a platform for multifunctional solution of many key problems in modern solid state physics. Fundamentals of practical application of the diffusion model for engineering of defects in crystals with modern information technologies have been considered. An algorithm has been proposed for the calculation and analysis of a defect structure of crystals.

  16. Irradiation induced defects in deformed $Ni_{3}Ge$ and $Ni_{3}Al$ single crystals

    CERN Document Server

    Murakumo, T; Miyahara, A; Hannuki, T; Sato, A

    2000-01-01

    The effect of plastic deformation on the formation of point defects and defect clusters by electron irradiation has been studied in Ll /sub 2/ ordered Ni/sub 3/Ge and Ni/sub 3/Al by high voltage electron microscopy. It is found that defects are formed preferentially along the Burgers vector directions as linear lines and grow into linear chains of clusters by electron irradiation. This phenomenon is explained by preferential generation of the defects along the antiphase boundary (APE) tubes, in specimens deformed both below and above the peak temperature T/sub p/. Based on three-dimensional analyses of the defect distribution, the formation mechanism of the APE tubes is discussed with particular reference to superdislocation motion and the strengthening of the Ll/sub 2/ ordered compounds of Ni /sub 3/Ge and Ni/sub 3/Al. (44 refs).

  17. Interaction of a crack with crystal defects in solids

    Energy Technology Data Exchange (ETDEWEB)

    Narita, N. [Kyushu Inst. of Tech., Kitakyushu (Japan). Dept. of Materials Science and Engineering; Higashida, K.

    1997-06-01

    The modifications of stress states near a crack tip by interstitial impurities and by dislocations are analyzed using 2-D and 3-D potential methods. In the case of interstitial impurities, the local stress intensity k{sub D} due to impurities is much affected by their location and is altered from crack tip shielding to anti-shielding as their location changes from behind a crack tip to the front. If impurities are mobile, their forward redistribution is induced by crack fields to increase k{sub D} values. The tetragonal strain of impurities also enhances the increase of the k{sub D} values. In dislocation-crack systems, two kinds of screw dislocation arrays are observed on each different slip plane ahead of a crack tip in MgO thin crystals and they mainly induce the mode I stress intensity of shielding type as a result of the mutual cancellation of the other modes. The effect of crack tip shielding/anti-shielding on crack extension is discussed in connection with the experimental observation of fracture toughness. (orig.). 7 refs.

  18. Charge states of a hydrogen defect (3326 cm-1 line) in ZnO

    Science.gov (United States)

    Herklotz, F.; Lavrov, E. V.; Weber, J.

    2012-08-01

    The hydrogen defect in ZnO that gives rise to a local vibrational mode at 3326 cm-1 is investigated by means of IR absorption. Sub-band gap illumination results in the appearance of a new line at 3358 cm-1 at the expense of the 3326 cm-1 signal. The measurements identify both IR absorption signals as O-H stretch modes of the same defect in different charge states. The effect of the sub-band gap light strongly suggest that this defect has a deep level in the band gap. Additionally, results on the thermal stability of the 3326 cm-1 feature are presented.

  19. Numerical analysis of contact line dynamics passing over a single wettable defect on a wall

    Science.gov (United States)

    Yamamoto, Yasufumi; Higashida, Shohei; Tanaka, Hiroyuki; Wakimoto, Tatsuro; Ito, Takahiro; Katoh, Kenji

    2016-08-01

    In this study, the dynamics of a contact line passing a single defect, which was represented by a locally wettable part (whose static contact angle is less than the other part, namely, chemically heterogeneous and physically flat part), was analyzed using numerical simulations employing the front-tracking method and the generalized Navier boundary condition. We observed that the contact line was distorted with a logarithmic shape far from the defect; however, the distortion was dependent on the wall velocity. The apparent (averaged) dynamic contact angle of the wall with a defect was evaluated using a macroscopic energy balance. The apparent dynamic contact angles estimated from the energy balance agree well with the arithmetic averaged angles obtained from the present simulations. The macroscopic energy balance is useful to consider the effect of heterogeneity or roughness of the wall on the relation between the dynamic contact angle and contact line speed.

  20. Effects of line defects on spin-dependent electronic transport of zigzag MoS{sub 2} nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xin-Mei; Yang, Kai-Wei; Zhang, Dan; Ding, Jia-Feng; Xu, Hui, E-mail: xuhui@csu.edu.cn [Institute of Super-microstructure and Ultrafast Process in Advanced Materials & Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083 (China); Long, Meng-Qiu, E-mail: mqlong@csu.edu.cn [Institute of Super-microstructure and Ultrafast Process in Advanced Materials & Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083 (China); Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Cui, Li-Ling [Institute of Super-microstructure and Ultrafast Process in Advanced Materials & Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083 (China); School of Science, Hunan University of Technology, Zhuzhou 412007 (China)

    2016-01-15

    The nonlinear spin-dependent transport properties in zigzag molybdenum-disulfide nanoribbons (ZMNRs) with line defects are investigated systematically using nonequilibrium Green’s function method combined with density functional theory. The results show that the line defects can enhance the electronic transfer ability of ZMNRs. The types and locations of the line defects are found critical in determining the spin polarization and the current-voltage (I-V) characteristics of the line defected ZMNRs. For the same defect type, the total currents of the ribbons with the line defects in the centers are lager than those on the edges. And for the same location, the total currents of the systems with the sulfur (S) line defect are larger than the according systems with the molybdenum (Mo) line defect. All the considered systems present magnetism properties. And in the S line defected systems, the spin reversal behaviors can be observed. In both the spin-up and spin-down states of the Mo line defected systems, there are obvious negative differential resistance behaviors. The mechanisms are proposed for these phenomena.

  1. Effects of line defects on spin-dependent electronic transport of zigzag MoS2 nanoribbons

    Directory of Open Access Journals (Sweden)

    Xin-Mei Li

    2016-01-01

    Full Text Available The nonlinear spin-dependent transport properties in zigzag molybdenum-disulfide nanoribbons (ZMNRs with line defects are investigated systematically using nonequilibrium Green’s function method combined with density functional theory. The results show that the line defects can enhance the electronic transfer ability of ZMNRs. The types and locations of the line defects are found critical in determining the spin polarization and the current-voltage (I-V characteristics of the line defected ZMNRs. For the same defect type, the total currents of the ribbons with the line defects in the centers are lager than those on the edges. And for the same location, the total currents of the systems with the sulfur (S line defect are larger than the according systems with the molybdenum (Mo line defect. All the considered systems present magnetism properties. And in the S line defected systems, the spin reversal behaviors can be observed. In both the spin-up and spin-down states of the Mo line defected systems, there are obvious negative differential resistance behaviors. The mechanisms are proposed for these phenomena.

  2. X-Ray Line Measurements with High Efficiency Bragg Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Pak, A; Gregori, G; Knight, J; Campbell, K; Landen, O; Glenzer, S

    2004-04-01

    We have studied the focusing properties of two highly oriented pyrolitic graphite (HOPG) spectrometers, which differ in the degree of the mosaic spread: ZYA with a low mosaic spread ({gamma}=0.4 degrees) and ZYH with a large mosaic spread ({gamma}=3.5 degrees). In order to assess the crystal performance for a variety of different experiments, various K{alpha} and K{beta} x-ray lines have been produced using a high-intensity ({approx}>10{sup 17} W/cm{sup 2}) short-pulse ({approx} 100 fs) laser beam focused onto Ti, V, Zn, and Cu foils. The measured spectral resolution of the HOPG crystals in both first and second order diffraction has been compared with theoretical predictions. Using known values for the peak reflectivity of HOPG crystals, we have also computed K{alpha} x-ray conversion efficiencies of Ti, V, Zn, and Cu. These results are important to estimate the optimal conditions under which different types of HOPG monochromators can be used for the detection of weak x-ray signals as the one encountered in x-ray Thomson/Compton scattering experiments.

  3. High-Q Defect-Free 2D Photonic Crystal Cavity from Random Localised Disorder

    Directory of Open Access Journals (Sweden)

    Kelvin Chung

    2014-07-01

    Full Text Available We propose a high-Q photonic crystal cavity formed by introducing random disorder to the central region of an otherwise defect-free photonic crystal slab (PhC. Three-dimensional finite-difference time-domain simulations determine the frequency, quality factor, Q, and modal volume, V, of the localized modes formed by the disorder. Relatively large Purcell factors of 500–800 are calculated for these cavities, which can be achieved for a large range of degrees of disorders.

  4. Reshaping of Gaussian light pulses transmitted through one-dimensional photonic crystals with two defect layers.

    Science.gov (United States)

    Dadoenkova, Yu S; Dadoenkova, N N; Lyubchanskii, I L; Sementsov, D I

    2016-05-10

    We present a theoretical study of the reshaping of subpicosecond optical pulses in the vicinity of double-peaked defect-mode frequencies in the spectrum of a one-dimensional photonic crystal with two defect layers and calculate the time delay of the transmitted pulses. We used the transfer matrix method for the evaluation of the transmittivity spectra, and the Fourier transform technique for the calculation of the transmitted pulse envelopes. The most considerable reshaping of the pulses takes place for pulses with a carrier frequency in the defect-mode center and with a spectrum wider than the half-width of the defect mode. For pulses with the carrier frequency at the low- and high-frequency peaks of the defect mode, reshaping is strong for the twice as wide pulses. The maximal time delay of a spectrally narrow pulse is of the order of the pulse duration and demonstrates extrema at the frequencies of the defect-mode peaks. The time delay of a wide pulse does not depend on the carrier frequency, but is one order of magnitude larger than the pulse duration.

  5. Analysis of arbitrary defects in photonic crystals by use of the source-model technique.

    Science.gov (United States)

    Ludwig, Alon; Leviatan, Yehuda

    2004-07-01

    A novel method derived from the source-model technique is presented to solve the problem of scattering of an electromagnetic plane wave by a two-dimensional photonic crystal slab that contains an arbitrary defect (perturbation). In this method, the electromagnetic fields in the perturbed problem are expressed in terms of the field due to the periodic currents obtained from a solution of the corresponding unperturbed problem plus the field due to yet-to-be-determined correction current sources placed in the vicinity of the perturbation. Appropriate error measures are suggested, and a few representative structures are presented and analyzed to demonstrate the versatility of the proposed method and to provide physical insight into waveguiding and defect coupling mechanisms typical of finite-thickness photonic crystal slabs.

  6. Experimental study on slow flexural waves around the defect modes in a phononic crystal beam using fiber Bragg gratings

    Science.gov (United States)

    Chuang, Kuo-Chih; Zhang, Zhi-Qiang; Wang, Hua-Xin

    2016-12-01

    This work experimentally studies influences of the point defect modes on the group velocity of flexural waves in a phononic crystal Timoshenko beam. Using the transfer matrix method with a supercell technique, the band structures and the group velocities around the defect modes are theoretically obtained. Particularly, to demonstrate the existence of the localized defect modes inside the band gaps, a high-sensitivity fiber Bragg grating sensing system is set up and the displacement transmittance is measured. Slow propagation of flexural waves via defect coupling in the phononic crystal beam is then experimentally demonstrated with Hanning windowed tone burst excitations.

  7. Charge states of a hydrogen defect (3326 cm{sup -1} line) in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Herklotz, Frank; Lavrov, Eduard; Weber, Joerg [Technische Universitaet Dresden (Germany)

    2010-07-01

    Hydrogen in ZnO is a common impurity that strongly influences its electrical and optical properties, in particular, via formation of shallow donor states. An IR absorption study of a H-related defect resulting in a local vibrational mode (LVM) at 3326 cm{sup -1} is presented. We observed that a sub band-gap illumination results in the appearance of an IR absorption line at 3358 cm{sup -1} at the expense of the 3326 cm{sup -1} signal. The results of isotope substitution experiments strongly reveal that the two signals are LVMs of the same defect in different charge states. From the energy of the sub band-gap light it is concluded that this defect has a deep level in the band-gap. Data on thermal stability as well as the transition between the different charge states at different temperatures are also presented. The microscopic nature of the defect is discussed.

  8. Mode III crack propagation in a bimaterial plane driven by a channel of small line defects

    CERN Document Server

    Piccolroaz, A; Movchan, A; Movchan, N

    2011-01-01

    We consider the quasi-static propagation of a Mode III crack along the interface in a bimaterial plane containing a finite array of small line defects (microcracks and rigid line inclusions). The microdefects are arranged to form a channel around the interface that can facilitate (or prevent) the crack propagation. The two dissimilar elastic materials are assumed to be weakly bonded, so that there is no kinking of the main crack from the straight path. On the basis of asymptotic formulae obtained by the authors, the propagation is analysed as a perturbation problem and the incremental crack advance is analytically derived at each position of the crack tip along the interface relative to the position of the defects. Numerical examples are provided showing potential applications of the proposed approach in the analysis of failure of composite materials. Extension to the case of infinite number of defects is discussed.

  9. Temperature-Dependent Defect-Induced New Emission in ZnSe Crystal

    Institute of Scientific and Technical Information of China (English)

    SHU Shi-Wei; MA Guo-Hong

    2009-01-01

    @@ The temperature-dependent photoluminescence behaviour of chemical vapour transport (CVT)-grown ZnSe crys-tal is investigated. A new emission band appears when temperature is reduced to 155K. It is shown that the new emission band is strongly related to defect emission peaked at around 2.1 eV. The emergence of the new emission band is accompanied by decreasing emission intensity of free exciton, as well as redshift of defect emis-sion with temperature decreases. The activated energy of the defect state is estimated to be 60.6meV, which is approximately equal to the energy difference between the new emission and the Tree exciton emission at 155 K.

  10. Pulse-height defect in single-crystal CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beliuskina, O.; Imai, N. [The University of Tokyo, Center for Nuclear Study, Wako, Saitama (Japan); Strekalovsky, A.O.; Aleksandrov, A.A.; Aleksandrova, I.A.; Ilich, S.; Kamanin, D.V.; Knyazheva, G.N.; Kuznetsova, E.A.; Mishinsky, G.V.; Pyatkov, Yu.V.; Strekalovsky, O.V.; Zhuchko, V.E. [JINR, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region (Russian Federation); Devaraja, H.M. [Manipal University, Manipal Centre for Natural Sciences, Manipal, Karnataka (India); Heinz, C. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Heinz, S. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Hofmann, S.; Kis, M.; Kozhuharov, C.; Maurer, J.; Traeger, M. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Pomorski, M. [CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif-sur-Yvette (France)

    2017-02-15

    The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of {sup 252} Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed. (orig.)

  11. On-Line Hyperspectral Transmittance Imaging for Internal Defect Detection of Pickling Cucumbers

    Science.gov (United States)

    Hyperspectral imaging technique under transmittance mode was investigated for detection of internal defect in pickling cucumbers such as carpel suture separation or hollow cucumbers caused by mechanical stress. A prototype of on-line hyperspectral transmittance imaging system was developed for real...

  12. Structure defect prediction of single crystal turbine blade by dendrite envelope tracking model

    Institute of Scientific and Technical Information of China (English)

    WANG Tong-min; Itsuo OHNAKA; Hideyuki YASUDA; SU Yan-qing; GUO Jing-jie

    2006-01-01

    The structure defects such as stray grains during unidirectional solidification can severely reduce the performance of single crystal turbine blades. A dendrite envelope tracking model is developed for predicting the structure defects of unidirectional solidification turbine blade. The normal vector of dendrite envelope is estimated by the gradient of dendrite volume fraction,and the growth velocity of the dendrite envelope (dendrite tips) is calculated with considering the anisotropy of grain growth. The solute redistribution at dendrite envelope is calculated by introducing an effective solute partition coefficient. Simulation tests show that the solute-build-up due to the rejection at envelope greatly affects grain competition and consequently solidification structure. The model is applied to predict the structure defects (e.g. stray grain) of single crystal turbine blade during unidirectional solidification. The results show that the developed model is reliable and has the following abilities: reproduce the growth competition among the different-preferential-direction grains:predict the stray grain formation:simulate the structure evolution (single crystal or dendrite grains).

  13. Computational techniques for determining printability of real defects in EUV mask pilot line

    Science.gov (United States)

    Morgan, Paul; Rost, Daniel; Price, Daniel; Li, Ying; Peng, Daniel; Chen, Dongxue; Hu, Peter; Corcoran, Noel; Son, Donghwan; Yonenaga, Dean; Tolani, Vikram

    2014-04-01

    extracted or recovered, and then forward-simulated in DPS to generate EUV aerial images subsequently analyzed for wafer printability. Each of the data sources have their strengths and limitations vis-à-vis use in a production pilot line. We exploit a mix and- match approach to effectively filter down to the defects that really matter. The 193nm inspection image data are readily available and although the pixel-sizes are somewhat coarse compared with the mask pattern widths, computationally predicting EUV printability off these images provides a quick filter of the obvious false and nuisance defects. SEM images on the other hand provide a much better two-dimensional top-down resolution of the patterns and hence work well for full-height excess or missing absorber defects but not so well for three-dimensional defects such as pits and bumps in the EUV multilayer or foreign material defects such as contamination. AFM height profile measurements generally provide the best available resolution on three-dimensional defects and thereby are well-suited for further simulations to EUV, however, AFM tip and image stability, and data acquisition time need to be comprehended. Computationally exploiting these supplemental defect inspection and metrology data in this mix-and-match approach effectively filters defects down to those that really matter on printed wafer. We see this approach as being vital to getting comprehensive defect learnings during the EUV pilot phase implementation and delivering well-characterized EUV masks to the wafer fab at substantially lower cost-of-ownership.

  14. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

  15. Cooking skyrmions: modeling temperature dependence of defect textures in cholesteric liquid crystals

    Science.gov (United States)

    Afghah, Sajedeh; Konya, Andrew; Selinger, Jonathan; Selinger, Robin

    Using 3-d simulations and analytical calculations, we study temperature dependence of defect structures in liquid crystals in confined geometries. We model a cholesteric liquid crystal confined in a microchannel with homeotropic anchoring, and investigate resulting defect structures--skyrmions, alone or in periodic arrays (bubble domains), and striped textures --as a function of microchannel dimensions, cholesteric pitch, and surface anchoring strength. We model temperature dependence by varying Frank constants and pitch using functions fit to experimental values. Experiments by the Qihuo Wei group show that skyrmion arrays in a microchannel appear to ``pop'' at a threshold temperature, transforming into elongated defects that span the microchannel's width. We explore this behavior using simulation and show that skyrmions elongate when their spacing is below a critical distance. Implementation of the simulation code in CUDA for a GPU-equipped computer produces highly efficient performance. We also carry out analytical calculations of free energy to determine optimal/stable structures for skyrmions and other defect textures in thin cells. Both simulation and analytical results are compared to recent experiments by the Qihuo Wei group. Supported by NSF CMMI-1436565. Acknowledgment is made to the Donors of the American Chemical Society Petroleum Research Fund for partial support of this research.

  16. Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices

    Science.gov (United States)

    Byrappa, Shayan M.

    Silicon Carbide [SiC] which exists as more than 200 different polytypes is known for superior high temperature and high power applications in comparison to conventional semiconductor materials like Silicon and Germanium. The material finds plethora of applications in a diverse fields due to its unique properties like large energy bandgap, high thermal conductivity and high electric breakdown field. Though inundated with superior properties the potential of this material has not been utilized fully due to impeding factors such as defects especially the crystalline ones which limit their performance greatly. Lots of research has been going on for decades to reduce these defects and there has been subsequent improvement in the quality as the diameter of SiC commercial wafers has reached 150mm from 25mm since its inception. The main focus of this thesis has been to study yield limiting defect structures in conjunction with several leading companies and national labs using advanced characterization tools especially the Synchrotron source. The in depth analysis of SiC has led to development of strategies to reduce or eliminate the density of defects by studying how the defects nucleate, replicate and interact in the material. The strategies discussed to reduce defects were proposed after careful deliberation and analysis of PVT grown bulk crystals and CVD grown epilayers. Following are some of the results of the study: [1] Macrostep overgrowth mechanism in SiC was used to study the deflection of threading defects onto the basal plane resulting in stacking faults. Four types of stacking faults associated with deflection of c/c+a threading defects have been observed to be present in 76mm, 100mm and 150mm diameter wafers. The PVT grown bulk crystals and CVD grown epilayers in study were subjected to contrast studies using synchrotron white beam X-ray topography [SWBXT]. The SWBXT image contrast studies of these stacking faults with comparison of calculated phase shifts for

  17. Near-Field Optical Microscopy of Defects in Cholesteric Oligomeric Liquid Crystal Films

    Energy Technology Data Exchange (ETDEWEB)

    Lukishova, S.G.; Schmid, A.W.

    2006-08-18

    This paper describes formation of 2-D hexagonal structures with a periodicity ~0.5-0.8 um in the defects of thin films of cholesteric oligomeric liquid crystals prepared by the evaporation of the solvent from the oligomer solution on the substrate. These regular arrays were observed by scanning near-field optical and concurrent atomic force microscopy. The mechanisms considered are both Benard-Marangoni and buoyancy conventions induced by solvent evaporation and air-bubble creation around the condensed water droplets from the air during evaporative cooling. Hexagonal structures prepared by this method can be used in photonic devices for emission enhancement, for instance, in liquid crystal lasers and single photon sources with oligomeric liquid crystal hosts.

  18. Defects in CdMnTe crystals for nuclear detector applications

    Institute of Scientific and Technical Information of China (English)

    Du Yuanyuan; Jie Wanqi; Xu Yadong; Zheng Xin; Wang Tao; Yu Hui

    2013-01-01

    A laser scanning confocal microscope (LSCM) and a field-emission scanning electron microscope (FESEM) were used to study the defects in CdMnTe crystals,such as twin boundaries,Te inclusions,and dislocations.Twin boundaries were usually decorated with Te inclusions,which could induce dislocations.The optical,electrical properties and detector performance of CdMnTe crystals with twins and free of twins were compared.The results showed that the wafers with a high density of twins usually had lower average IR transmittance and poorer crystalline quality.Besides,the energy spectra indicated that twin boundaries in a CdMnTe detector had a negative effect on detector performance; the values of both the energy resolution and (μτ)e were nearly half of those for a single crystal detector.

  19. Engineering a light-emitting planar defect within three-dimensional photonic crystals

    Directory of Open Access Journals (Sweden)

    Guiqiang Liu, Yan Chen and Zhiqing Ye

    2009-01-01

    Full Text Available Sandwich structures, constructed from a planar defect of rhodamine-B (RhB-doped titania (TiO2 and two photonic crystals, were synthesized via the self-assembly method combined with spin-coating. The modification of the spontaneous emission of RhB molecules in such structures was investigated experimentally. The spontaneous emission of RhB-doped TiO2 film with photonic crystals was reduced by a factor of 5.5 over a large bandwidth of 13% of the first-order Bragg diffraction frequency when compared with that of RhB-doped TiO2 film without photonic crystals. The angular dependence of the modification and the photoluminescence lifetime of RhB molecules demonstrate that the strong and wide suppression of the spontaneous emission of the RhB molecules is due to the presence of the photonic band gap.

  20. Point defects and luminescence in single NaCl: Cu crystals

    Energy Technology Data Exchange (ETDEWEB)

    Cruz Z, E.; Ramos B, S.; Negron M, A. [ICN-UNAM, A.P. 70-543, 04510 Mexico D.F. (Mexico); Chernov, V.; Melendrez, R.; Barboza F, M. [CIF, UNISON, A.P. 5-088, 83190 Hermosillo, Sonora (Mexico); Murrieta S, H.; Hernandez A, J. [IFUNAM, A.P. 20-364, 01000 Mexico D.F. (Mexico)

    2004-07-01

    Optical absorption, thermally stimulated luminescence and photoluminescence experiments were performed in NaCl:Cu(0.4%) and NaCl:Cu(0.8%) crystals blocks grown by Czochralski technique. The monocrystals NaCl:Cu were exposed to gamma rays from {sup 60} Co source up to 30 kGy as well as to UV radiation. The radiation-induced defects were mainly in the F-centers form and their optical absorption bands were found to be dependent from the Cu impurity concentration. It was observed that the gamma induced absorption band at 256.7 nm was shifted toward 236.3 nm when the crystals were irradiated with UV light. At high radiation dose (20 kGy) the F-centers were bleached with F-light. The change in the glow curve after bleaching suggests that the recombination occurs around the impurity of the doped crystal. (Author)

  1. Direct observation of defect structure in protein crystals by atomic force and transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Devaud, G. (Department of Physics, University of Colorado, Boulder, Colorado 80309 (United States)); Furcinitti, P.S. (Department of Molecular, Cellular and Developmental Biology, University of Colorado, Boulder, Colorado 80309 (United States)); Fleming, J.C.; Lyon, M.K.; Douglas, K. (Department of Physics, University of Colorado, Boulder, Colorado 80309 (United States))

    1992-09-01

    We have examined the structure of S-layers isolated from {ital Sulfolobus} {ital acidocaldarius} using atomic force microscopy (AFM) and transmission electron microscopy (TEM). From the AFM images, we were able to directly observe individual dimers of the crystal, defects in the crystal structure, and twin boundaries. We have identified two types of boundaries, one defined by a mirror plane and the other by a glide plane. This work shows that twin boundaries are highly structured regions that are directly related to the organization of units within each crystal domain. Projection maps from TEM images have shown that there are significant differences in the final average maps, depending on which side of the sample is adsorbed to the carbon support film. Comparison of AFM images to TEM projection maps has allowed us to relate high magnification views obtained by AFM to the relatively high resolution information obtained by electron microscopy and image processing.

  2. A novel method to alleviate flash-line defects in coining process

    KAUST Repository

    Xu, Jiangping

    2013-04-01

    We employ a finite element framework based on a dynamic explicit algorithm to predict the flash-line defects in the coining process. The distribution of the flash-line is obtained by building a radial friction work model at the element level. The elasto-plastic behavior of porous materials undergoing large deformations is considered where the constitutive level updates are the result of a local variational minimization problem. We study the material flow at different strokes of the die across the entire coining process and observe that the change in the flow direction of the material in the rim region may contribute to the flash lines. Our proposed framework shows that a part of the rim region in which the flash-line defects appear is consistent with the reported experimental results. We also propose a novel method of redesigning the rim geometry of the workpiece to alleviate the flash-line defects which also shows good agreement with experiments. © 2012 Elsevier Inc. All rights reserved.

  3. Defects at the Nanoscale Impact Contact Line Motion at all Scales

    Science.gov (United States)

    Perrin, Hugo; Andreotti, Bruno; Lhermerout, Romain; Davitt, Kristina; Rolley, Etienne; Wetting; Nuclation Team; PMMH Team

    2016-11-01

    The contact angle of a liquid drop moving on a real solid surface depends on the speed and direction of motion of the three-phase contact line. Many experiments have demonstrated that pinning on surface defects, thermal activation and viscous dissipation impact contact line dynamics, but so far efforts have failed to disentangle the role of each of these dissipation channels. Here, we propose a unifying multi-scale approach that provides a single quantitative framework. We use this approach to successfully account for the dynamics measured in a classic dip-coating experiment performed over a unprecedentedly wide range of velocity. We show that the full contact line dynamics up to the liquid film entrainment threshold can be parametrized by the size, amplitude and density of nanometer-scale defects. This leads us to reinterpret the contact angle hysteresis as a dynamical cross-over rather than a depinning transition. ANR SMART and REALWET.

  4. Propagating and evanescent properties of double-point defects in sonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Romero-Garcia, V; Sanchez-Perez, J V [Centro de tecnologIas fisicas: Acustica, Materiales y Astrofisica, Universidad Politecnica de Valencia, Camino de Vera s/n, 46022 Valencia (Spain); Garcia-Raffi, L M, E-mail: virogar1@mat.upv.e [Instituto Universitario de Matematica Pura y Aplicada, Universidad Politecnica de Valencia, Camino de Vera s/n, 46022 Valencia (Spain)

    2010-08-15

    Complex band structures and multiple scattering theory have been used in this paper to analyze the overlapping of the evanescent waves localized in point defects in sonic crystals (SCs). The extended plane wave expansion (EPWE) with supercell approximation gives the imaginary part of the Bloch vectors that produces the decay of the localized modes inside the periodic system. Double cavities can present a coupling between the evanescent modes localized in the defect, showing a symmetric or antisymmetric mode. When point defects are close, the complex band structures reveal a splitting of the frequencies of the localized modes. Both the real part and the imaginary values of k of the localized modes in the cavities present different values for each localized mode, which gives different properties for each mode. The novel measurements, in very good agreement with analytical data, show experimental evidence of the symmetric and antisymmetric localized modes for a double-point defect in SCs. The investigation of the localization phenomena and the coupling between defects in periodic systems has fundamental importance in both pure and applied physics.

  5. Defect Modes in Multiple-Constituent One-Dimensional Photonic Crystals Examined by an Analytic Bloch-Mode Approach

    Institute of Scientific and Technical Information of China (English)

    SANG Hong-Yi; LI Zhi-Yuan; GU Ben-Yuan

    2005-01-01

    @@ Defect modes in one-dimensional photonic crystals (PCs) can be readily detected from the solution of the transmission spectra via the standard transfer-matrix method. We adopt an analytic Bloch-mode approach to examine this problem in terms of eigenmode solutions and investigate the dispersion behaviour of localized defect modes supported by a defect layer sandwiched within two symmetric semi-infinite PCs that are made from multiple constituents. The results show that the number of defect modes grows when the dielectric constant and width of the defect layer increase.

  6. Annealing Behavior of New Micro-defects in p-type Large-diameter CZ-Si Crystal

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied. It was suggested that these defects become larger during high temperature annealing and disappear by annealing at 1250℃.

  7. Growth of High Quality Semi-Insulating InP Single Crystal by Suppression of Compensation Defects

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

  8. First-order and tricritical wetting transitions in the two-dimensional Ising model caused by interfacial pinning at a defect line

    Science.gov (United States)

    Trobo, Marta L.; Albano, Ezequiel V.; Binder, Kurt

    2014-08-01

    We present a study of the critical behavior of the Blume-Capel model with three spin states (S =±1,0) confined between parallel walls separated by a distance L where competitive surface magnetic fields act. By properly choosing the crystal field (D), which regulates the density of nonmagnetic species (S =0), such that those impurities are excluded from the bulk (where D =-∞) except in the middle of the sample [where DM(L/2)≠-∞], we are able to control the presence of a defect line in the middle of the sample and study its influence on the interface between domains of different spin orientations. So essentially we study an Ising model with a defect line but, unlike previous work where defect lines in Ising models were defined via weakened bonds, in the present case the defect line is due to mobile vacancies and hence involves additional entropy. In this way, by drawing phase diagrams, i.e., plots of the wetting critical temperature (Tw) versus the magnitude of the crystal field at the middle of the sample (DM), we observe curves of (first-) second-order wetting transitions for (small) high values of DM. Theses lines meet in tricritical wetting points, i.e., (Twtc,DMtc), which also depend on the magnitude of the surface magnetic fields. It is found that second-order wetting transitions satisfy the scaling theory for short-range interactions, while first-order ones do not exhibit hysteresis, provided that small samples are used, since fluctuations wash out hysteretic effects. Since hysteresis is observed in large samples, we performed extensive thermodynamic integrations in order to accurately locate the first-order transition points, and a rather good agreement is found by comparing such results with those obtained just by observing the jump of the order parameter in small samples.

  9. Dynamics of dipolar defects in rare earth-doped alkaline-earth fluoride crystals

    Science.gov (United States)

    Charnock, Forrest Taylor

    Alkaline-earth fluoride crystals such as SrF2 provide an excellent sample material for investigating the physics of point defects in crystal lattices. High quality crystals are easily grown, and they readily accept many dopant ions into the lattice, particularly rare earth ions. Rare earth dopant ions (typically trivalent) occupy substitutional sites in the lattice by replacing a Sr2+ ion. Due to the extra charge of the rare earth ion, charge compensation is often provided by an extra fluoride ion (F--) located in a nearby interstitial position. If located in the nearest-neighbor (nn) interstitial position, it forms a defect with C4n symmetry; if located in the next-nearest-neighbor (nnn) intersitial position, it forms a defect with C3n symmetry. Given sufficient thermal energy, this interstitial F ion can move to adjacent interstitial sites and hence reorient the defect. The rate w at which the ion moves from one interstitial site to another is well described by a simple Arrhenius expression: w=n0e-E/kT , where n0 is the attack frequency of the F-- and E is the activation energy. This motion can profoundly affect both the electronic polarizability of the material and the polarization of light emitted or absorbed by the rare earth ion. This thesis describes the normal mode motion of interstitial ions which may occupy either nn or nnn interstitial sites. Using electron paramagnetic resonance (EPR), I observed the relative populations of nn and nnn defects in SrF2 doped with Gd3+ as a function of temperature. These measurements show that dipolar reorientation of the nnn F occurs through the nn interstitial position. Not all interstitial F-- motion is thermally driven. Fluorescence depolarization measurements of SrF2:Pr3+ indicate that optically stimulating a Pr3+ may induce interstitial motion of a nn F--. Such motion was confirmed by showing that nn defects in SrF2:Pr3+ may be polarized at very low temperatures when the sample is illuminated with resonant light. I

  10. Defect generation and motion in polyethylene-like crystals, analyzed by simulation with supercomputers

    Energy Technology Data Exchange (ETDEWEB)

    Wunderlich, B.; Xenopoulos, A.; Noid, D.W.; Sumpter, B.G. (Oak Ridge National Lab., TN (USA) Tennessee Univ., Knoxville, TN (USA). Dept. of Chemistry)

    1990-01-01

    Defects in polymers were observed by high resolution electron microscopy and inferred from their mechanical and dielectrical behavior. The details of their generation was not known, however, in the past. During the last few years we have been able to extend the molecular dynamics simulation of polyethylene to crystals containing up to 6100 atoms and to times as long as 100 ps. The major observation was that single bond rotations of more than 90{degree} become possible already more than 100 K below the melting temperature. These defects have lifetimes of only a few ps. By coupling to kinks (2g1) they can extend their lifetime considerably. Addition of a thermal, mechanical or dielectric free energy gradient to the thermally created defects seems to be able to account for the microscopic motion needed to explain the macroscopically observed annealing, deformations and relaxation effects. Key to the mechanical and dielectric properties is thus the existence of conformational disorder (condis crystal). 47 refs., 9 figs.

  11. Charge states of a hydrogen defect (3326 cm{sup -1} line) in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Herklotz, F., E-mail: frank.herklotz@gmx.de [Technische Universitaet Dresden, 01062 Dresden (Germany); Lavrov, E.V.; Weber, J. [Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-08-01

    The hydrogen defect in ZnO that gives rise to a local vibrational mode at 3326 cm{sup -1} is investigated by means of IR absorption. Sub-band gap illumination results in the appearance of a new line at 3358 cm{sup -1} at the expense of the 3326 cm{sup -1} signal. The measurements identify both IR absorption signals as O-H stretch modes of the same defect in different charge states. The effect of the sub-band gap light strongly suggest that this defect has a deep level in the band gap. Additionally, results on the thermal stability of the 3326 cm{sup -1} feature are presented.

  12. Vision-based in-line fabric defect detection using yarn-specific shape features

    Science.gov (United States)

    Schneider, Dorian; Aach, Til

    2012-01-01

    We develop a methodology for automatic in-line flaw detection in industrial woven fabrics. Where state of the art detection algorithms apply texture analysis methods to operate on low-resolved ({200 ppi) image data, we describe here a process flow to segment single yarns in high-resolved ({1000 ppi) textile images. Four yarn shape features are extracted, allowing a precise detection and measurement of defects. The degree of precision reached allows a classification of detected defects according to their nature, providing an innovation in the field of automatic fabric flaw detection. The design has been carried out to meet real time requirements and face adverse conditions caused by loom vibrations and dirt. The entire process flow is discussed followed by an evaluation using a database with real-life industrial fabric images. This work pertains to the construction of an on-loom defect detection system to be used in manufacturing practice.

  13. Study of Cu-related Defect States in Single-crystal CdTe

    Science.gov (United States)

    Corwine, Caroline; Sites, James; Gessert, Timothy; Metzger, Wyatt; Dippo, Pat; Duda, Anna

    2003-10-01

    We have studied single-crystal CdTe using low-temperature photoluminescence (PL) in an effort to understand the effects of copper on the deep levels, as well as the effect of a bromine methanol (BrMe) etch on subsequent copper diffusion into CdTe. In present polycrystalline CdS/CdTe solar cell technology, the use of a back contact that contains Cu is necessary to produce high-efficiency cells. However, it is not generally understood why Cu is necessary for these devices to function well. In order to obtain further advances in the efficiencies of these solar cells, it is important to know how the back contact process may affect the defect states in CdTe. PL is one tool used to study defect states. However, before PL can be used effectively for polycrystalline CdTe solar cells, relevant spectral features first must be interpreted for single-crystal CdTe. All PL in this study was taken at 4.5 K. We report on PL peaks at 1.40 and 1.45 eV, which are seen only after Cu is diffused into single-crystal CdTe.

  14. Mapping single-crystal dendritic microstructure and defects in nickel-base superalloys with synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Husseini, Naji S. [Applied Physics Program, University of Michigan, Ann Arbor, MI 48109 (United States)], E-mail: najihuss@umich.edu; Kumah, Divine P. [Applied Physics Program, University of Michigan, Ann Arbor, MI 48109 (United States); Yi, Jian Z.; Torbet, Christopher J. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Arms, Dohn A.; Dufresne, Eric M. [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States); Pollock, Tresa M.; Wayne Jones, J. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Clarke, Roy [Applied Physics Program, University of Michigan, Ann Arbor, MI 48109 (United States)

    2008-10-15

    Solidification of single-crystal nickel-base superalloys introduces large-scale segregation of constituent elements and defects such as dislocations and mosaicity. By exploiting the energy tunability and interference capabilities of high-brilliance X-ray radiation, key structural features of the dendritic single crystals were mapped over large areas. Interference and diffraction of synchrotron X-rays revealed significant misorientations between individual dendrites in the as-solidified state. For the first time this mosaic structure was quantified for an array of dendrites and correlated with the density of 'grown-in' dislocations whose density ranged from 10{sup 7} to 10{sup 8} cm{sup -2}. Absorption contrast permitted simultaneous mapping of the distribution of refractory metal additives (e.g. rhenium and tungsten), which segregated preferentially to the dendrite cores with a linear composition gradient toward the interdendritic regions. The results demonstrate that synchrotron X-ray imaging is promising for in situ studies of single-crystal structure and defects in nickel-base superalloys.

  15. Defect and surface asperity dependent yield during contact loading of an organic molecular single crystal

    Science.gov (United States)

    Ramos, K. J.; Bahr, D. F.; Hooks, D. E.

    2011-03-01

    The onset of plastic deformation was investigated using nanoindentation in single crystals of the explosive cyclotrimethylene trinitramine (RDX). Cleavage and habit planes were tested revealing a range of yielding behaviors. Smooth habit planes of unprocessed single crystals exhibited distinct yield points near the theoretical shear strength; planes produced by cleavage yielded at lower applied stresses. Cumulative probability distributions of maximum shear stresses at yield were used to illustrate the representative yielding behavior for samples prepared by the different methods. A statistically significant difference was observed for cleavage and habit planes. This suggested that structural defects, such as dislocations from growth and sample preparation, were being probed and nanoindentation can be used to correlate the mechanical response of organic molecular crystals with defect density. This capability may help explain the observed range of measurement differences in fundamental properties in this class of materials, such as sensitivity to the initiation of detonation in explosives, and disparate tablet integrity and stability responses in polymorphs of some pharmaceutical materials.

  16. Three-Dimensional Structure and Defects in Colloidal Photonic Crystals Revealed by Tomographic Scanning Transmission X-ray Microscopy

    NARCIS (Netherlands)

    Hilhorst, Jan; van Schooneveld, Matti M.; Wang, Jian; de Smit, Emiel; Tyliszczak, Tolek; Raabe, Joerg; Hitchcock, Adam P.; Obst, Martin; de Groot, Frank M. F.; Petukhov, Andrei V.

    2012-01-01

    Self-assembled colloidal crystals have attracted major attention because of their potential as low-cost three-dimensional (3D) photonic crystals. Although a high degree of perfection is crucial for the properties of these materials, little is known about their exact structure and internal defects. I

  17. The valley filter efficiency of monolayer graphene and bilayer graphene line defect model

    Science.gov (United States)

    Cheng, Shu-guang; Zhou, Jiaojiao; Jiang, Hua; Sun, Qing-Feng

    2016-10-01

    In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two valley filter models based on monolayer and bilayer graphene. Applying the transfer matrix method, valley resolved transmission coefficients are obtained. We find that: (i) under weak disorder, when the line defect length is over about 15 {nm}, it functions as a perfect channel (quantized conductance) and valley filter (totally polarized); (ii) in the diffusive regime, combination effects of backscattering and bulk states assisted intervalley transmission enhance the conductance and suppress the valley polarization; (iii) for very long line defect, though the conductance is small, polarization is indifferent to length. Under perpendicular magnetics field, the characters of charge and valley transport are only slightly affected. Finally we discuss the efficiency of transport valley polarized current in a hybrid system.

  18. High temperature defect equilibrium in ZnS:Cu single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lott, K.; Shinkarenko, S.; Tuern, L.; Nirk, T.; Oepik, A. [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia); Kallavus, U. [Centre for Materials Research, Tallinn University of Technology, Tallinn (Estonia); Gorokhova, E. [Scientific Research and Technological Institute of Optical Material Science, S. I. Vavilov State Optical Institute, All-Russia Science Center, St. Petersburg (Russian Federation); Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Moscow (Russian Federation)

    2010-07-15

    High temperature investigations in ZnS:Cu crystals were performed under defined conditions. High temperature electrical conductivity and copper solubility data were obtained under different component vapour pressures and under different sample temperatures. The experimental data at sulphur vapour pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder. Compensating association of copper with this antistructure defect may occur. Antistructure disorder disappears with increasing of zinc vapour pressure and with increasing role of holes in bipolar conductivity. The method for solving the system of quasichemical reactions without approximation was used to model high temperature defect equilibrium. This model contains antistructure disorder and copper solubility limitation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. C H complex defects and their influence in ZnO single crystal

    Institute of Scientific and Technical Information of China (English)

    谢辉; 赵有文; 刘彤; 董志远; 杨俊; 刘京明

    2015-01-01

    Infrared absorption local vibration mode (LVM) spectroscopy is used to study hydrogen related defects in n-type ZnO single crystal grown by a closed chemical vapor transport (CVT) method under Zn-rich growth conditions, in which carbon is used as a transport agent. Two C–H complex related absorption peaks at 2850 cm−1 and 2919 cm−1 are detected in the sample. The formation of the C–H complex implies an effect of carbon donor passivation and formation suppression of H donor in ZnO. The influence of the complex defects on the electrical property of the CVT-ZnO is discussed based on Hall measurement results and residual impurity analysis.

  20. A sublinear-scaling approach to density-functional-theory analysis of crystal defects

    Science.gov (United States)

    Ponga, M.; Bhattacharya, K.; Ortiz, M.

    2016-10-01

    We develop a sublinear-scaling method, referred to as MacroDFT, for the study of crystal defects using ab-initio Density Functional Theory (DFT). The sublinear scaling is achieved using a combination of the Linear Scaling Spectral Gauss Quadrature method (LSSGQ) and a Coarse-Graining approach (CG) based on the quasi-continuum method. LSSGQ reformulates DFT and evaluates the electron density without computing individual orbitals. This direct evaluation is possible by recourse to Gaussian quadrature over the spectrum of the linearized Hamiltonian operator. Furthermore, the nodes and weights of the quadrature can be computed independently for each point in the domain. This property is exploited in CG, where fields of interest are computed at selected nodes and interpolated elsewhere. In this paper, we present the MacroDFT method, its parallel implementation and an assessment of convergence and performance by means of test cases concerned with point defects in magnesium.

  1. Crystal structure of defect-containing semiconductor nanocrystals. An X-ray diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Buljan, Maja [Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni; Institut Rudjer Boskovic, Zagreb (Croatia); Desnica, Uros V.; Radic, Nikola [Institut Rudjer Boskovic, Zagreb (Croatia); Drazic, Goran [Institut Jozef Stefan, Ljubljana (Slovenia); Matej, Zdenek; Vales, Vaclav; Holy, Vaclav [Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni

    2009-08-15

    Defects of crystal structure in semiconductor nanocrystals embedded in an amorphous matrix are studied by X-ray diffraction and a full-profile analysis of the diffraction curves based on the Debye formula. A new theoretical model is proposed, describing the diffraction from randomly distributed intrinsic and extrinsic stacking faults and twin blocks in the nanocrystals. The application of the model to full-profile analysis of experimental diffraction curves enables the determination of the concentrations of individual defect types in the nanocrystals. The method has been applied for the investigation of selforganized Ge nanocrystals in an SiO{sub 2} matrix, and the dependence of the structure quality of the nanocrystals on their deposition and annealing parameters was obtained. (orig.)

  2. Nanoscale characterization of local structures and defects in photonic crystals using synchrotron-based transmission soft X-ray microscopy

    Science.gov (United States)

    Nho, Hyun Woo; Kalegowda, Yogesh; Shin, Hyun-Joon; Yoon, Tae Hyun

    2016-01-01

    For the structural characterization of the polystyrene (PS)-based photonic crystals (PCs), fast and direct imaging capabilities of full field transmission X-ray microscopy (TXM) were demonstrated at soft X-ray energy. PS-based PCs were prepared on an O2-plasma treated Si3N4 window and their local structures and defects were investigated using this label-free TXM technique with an image acquisition speed of ~10 sec/frame and marginal radiation damage. Micro-domains of face-centered cubic (FCC (111)) and hexagonal close-packed (HCP (0001)) structures were dominantly found in PS-based PCs, while point and line defects, FCC (100), and 12-fold symmetry structures were also identified as minor components. Additionally, in situ observation capability for hydrated samples and 3D tomographic reconstruction of TXM images were also demonstrated. This soft X-ray full field TXM technique with faster image acquisition speed, in situ observation, and 3D tomography capability can be complementally used with the other X-ray microscopic techniques (i.e., scanning transmission X-ray microscopy, STXM) as well as conventional characterization methods (e.g., electron microscopic and optical/fluorescence microscopic techniques) for clearer structure identification of self-assembled PCs and better understanding of the relationship between their structures and resultant optical properties. PMID:27087141

  3. Nanoscale characterization of local structures and defects in photonic crystals using synchrotron-based transmission soft X-ray microscopy

    Science.gov (United States)

    Nho, Hyun Woo; Kalegowda, Yogesh; Shin, Hyun-Joon; Yoon, Tae Hyun

    2016-04-01

    For the structural characterization of the polystyrene (PS)-based photonic crystals (PCs), fast and direct imaging capabilities of full field transmission X-ray microscopy (TXM) were demonstrated at soft X-ray energy. PS-based PCs were prepared on an O2-plasma treated Si3N4 window and their local structures and defects were investigated using this label-free TXM technique with an image acquisition speed of ~10 sec/frame and marginal radiation damage. Micro-domains of face-centered cubic (FCC (111)) and hexagonal close-packed (HCP (0001)) structures were dominantly found in PS-based PCs, while point and line defects, FCC (100), and 12-fold symmetry structures were also identified as minor components. Additionally, in situ observation capability for hydrated samples and 3D tomographic reconstruction of TXM images were also demonstrated. This soft X-ray full field TXM technique with faster image acquisition speed, in situ observation, and 3D tomography capability can be complementally used with the other X-ray microscopic techniques (i.e., scanning transmission X-ray microscopy, STXM) as well as conventional characterization methods (e.g., electron microscopic and optical/fluorescence microscopic techniques) for clearer structure identification of self-assembled PCs and better understanding of the relationship between their structures and resultant optical properties.

  4. Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide

    Science.gov (United States)

    Ryu, Gyeong Hee; Lee, Jongyeong; Kim, Na Yeon; Lee, Yeongdong; Kim, Youngchan; Kim, Moon J.; Lee, Changgu; Lee, Zonghoon

    2016-03-01

    The production of hole and Mo cluster by electron beam irradiation in molybdenum disulfide (MoS2), which consists of S-Mo-S layers, is monitored over time using atomic resolution transmission electron microscopy. S vacancies are firstly formed due to knocking off of S atoms and then line defects are induced due to accumulation of S vacancies in MoS2 sheet instead of forming a hole. The line defects tend to be merged at a point and a hole is formed subsequently at the point. Mo atoms tend to be clustered discretely as a nano sheet along the edge of the hole due to difference in displacement threshold energy between Mo and S atoms under electron irradiation. After Mo clusters are nearly separated from MoS2 sheet, the clusters are transformed into body-centered cubic nanocrystal of Mo during prolonged electron beam irradiation. The line defect mediated formation of hole and Mo cluster only occurs within a single grain of monolayer MoS2 sheet.

  5. Unconventional optical Tamm defect states in metal-terminated opal photonic crystals

    Science.gov (United States)

    Korovin, Alexander V.; Romanov, Sergei G.

    2016-04-01

    Optical Tamm surface states are formed in 3-dimensional photonic crystals coated by thin metal films. These states appear in registry with diffraction resonances and localize the electromagnetic energy in resonators formed by diffraction mirrors of lattice planes and metal semishells. Tamm defect states provide the bypass for light in the spectral range of photonic stop-bands and thus reduce the efficiency of the Bragg diffraction resonances. In spite of hidden nature of this effect, its magnitude is comparable to the extraordinary transmission associated with tunneling of surface plasmon polaritons, which are simultaneously excited at surfaces of corrugated metal film coating.

  6. Three-dimensional photonic crystals containing designed defects achieved with two-photon photopolymerization

    Institute of Scientific and Technical Information of China (English)

    Ming Zhou; Wei Zhang; Junjie Kong; Haifeng Yang; Lan Cai

    2009-01-01

    Two-photon photopolymerization (TPP) with femtosecond laser is a promising method to fabricate three-dimensional (3D) photonic crystals (PCs). Based on the TPP principle, the micro-fabrication system has been built. The 3D woodpile PCs with rod space of 2000 nm are fabricated easily and different defects are introduced in order to form the cross-waveguide and the micro-laser structure PCs. Simulation results of the optical field intensity distributions using finite-difference time domain (FDTD) method are given, which support the designs and implementation of the PC of two types in theory.

  7. Mini-stop bands in single-defect photonic crystal waveguides

    CERN Document Server

    Agio, M; Agio, Mario; Soukoulis, Costas M.

    2001-01-01

    We numerically study single-defect photonic crystal waveguides obtained from a triangular lattice of air holes in a dielectric background. It is found that, for medium-high air filling ratios, the transmission has very small values in narrow frequency regions lying inside the photonic band gap - the so-called mini-stop bands. Two types of mini-stop bands are shown to exist; one of which is due to the multimode nature of the waveguide. Their dependence on the length of the waveguide and on the air filling ratio is presented.

  8. Photonic bands and defect modes in metallo-dielectric photonic crystal slabs

    CERN Document Server

    Zanotto, Simone; Sorba, Lucia; Tredicucci, Alessandro

    2016-01-01

    Photonic components based on structured metallic elements show great potential for device applications where field enhancement and confinement of the radiation on a subwavelength scale is required. In this paper we report a detailed study of a prototypical metallo-dielectric photonic structure, where features well known in the world of dielectric photonic crystals, like band gaps and defect modes, are exported to the metallic counterpart, with interesting applications to infrared science and technology, as for instance in quantum well infrared photodetectors, narrow-band spectral filters, and tailorable thermal emitters.

  9. Consolidation of nanometer-sized aluminum single crystals: Microstructure and defects evolutions

    KAUST Repository

    Afify, N. D.

    2014-04-01

    Deriving bulk materials with ultra-high mechanical strength from nanometer-sized single metalic crystals depends on the consolidation procedure. We present an accurate molecular dynamics study to quantify microstructure responses to consolidation. Aluminum single crystals with an average size up to 10.7 nm were hydrostatically compressed at temperatures up to 900 K and pressures up to 5 GPa. The consolidated material developed an average grain size that grew exponentially with the consolidation temperature, with a growth rate dependent on the starting average grain size and the consolidation pressure. The evolution of the microstructure was accompanied by a significant reduction in the concentration of defects. The ratio of vacancies to dislocation cores decreased with the average grain size and then increased after reaching a critical average grain size. The deformation mechanisms of poly-crystalline metals can be better understood in the light of the current findings. © 2013 Elsevier B.V. All rights reserved.

  10. Near-unity absorption in a graphene-embedded defective photonic crystals array

    Science.gov (United States)

    Bian, Li-an; Liu, Peiguo; Han, Zhenzhong; Li, Gaosheng; Mao, Jian; Lu, Zhonghao

    2017-04-01

    Near-unity absorption is achieved theoretically at the terahertz frequencies by the graphene-based absorber under the condition of approaching critical coupling. The designed structure is composed of a defective photonic crystal array equal to the multilayer subwavelength grating, which possesses simultaneously the properties of photonic crystal and subwavelength grating so that both FP resonance and Fano resonance are excited. To simulate the structure accurately, rigorous coupled-wave analysis is employed. It is found that the dip can be introduced into the high absorption spectrum by the coupling of two resonances, which is realized by tuning the chemical potential of graphene, the geometry and equivalent thickness of grating as well as the angle of incident wave. The unusual absorption spectra are believed to be useful in the detection and modulation of terahertz waves.

  11. Effects of negative index medium defect layers on the trans mission properties of one-dimensional photonic crystal

    Institute of Scientific and Technical Information of China (English)

    XIANG Yuan-jiang; DAI Xiao-yu; WEN Shuang-chun

    2007-01-01

    School of Computer and Communication, Hunan University, Changsha 410082, ChinaThe photonic band gap structure of 1D photonic crystal with a negative index medium defect layer is studied by using the transfer matrix method. Investigations show that the introdution of negative index medium defect layer and the increase of the negative index value will result in an extension of the band gap. Moreover, by increasing the negative index, the width of defect layer and the numbers of period photonic crystal, the width of defect modes will be narrowed, which is advantaged to obtain optical filters with narrow band. Finally, the effects of absorption on the properties of band gap and on defect modes have been discussed.

  12. Structure determination of the 1918 H1N1 neuraminidase from a crystal with lattice-translocation defects

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xueyong [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Xu, Xiaojin [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Glycobiology Institute, Department of Biochemistry, University of Oxford, South Parks Road, Oxford OX1 3QU (United Kingdom); Wilson, Ian A., E-mail: wilson@scripps.edu [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); The Skaggs Institute for Chemical Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States)

    2008-08-01

    The structure of the 1918 H1N1 neuraminidase was determined to 1.65 Å from crystals with a lattice-translocation defect using uncorrected, as well as corrected, diffraction data. Few examples of macromolecular crystals containing lattice-translocation defects have been published in the literature. Lattice translocation and twinning are believed to be two common but different crystal-growth anomalies. While the successful use of twinned data for structure determination has become relatively routine in recent years, structure determination of crystals with lattice-translocation defects has not often been reported. To date, only four protein crystal structures containing such a crystal defect have been determined, using corrected, but not uncorrected, intensity data. In this report, the crystallization, structure determination and refinement of N1 neuraminidase derived from the 1918 H1N1 influenza virus (18NA) at 1.65 Å resolution are described. The crystal was indexed in space group C222{sub 1}, with unit-cell parameters a = 117.7, b = 138.5, c = 117.9 Å, and the structure was solved by molecular replacement. The lattice-translocation vector in the 18NA crystal was (0, 1/2, 1/2) or its equivalent vector (1/2, 0, 1/2) owing to the C lattice symmetry. Owing to this special lattice-translocation vector in space group C222{sub 1}, structure refinement could be achieved in two different ways: using corrected or uncorrected diffraction data. In the refinement with uncorrected data, a composite model was built to represent the molecules in the translated and untranslated layers, respectively. This composite structure model provided a unique example to examine how the molecules were arranged in the two lattice domains resulting from lattice-translocation defects.

  13. Solitons and production of defects in flow-aligning nematic liquid crystals under simple shear flow

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The production of defects in flow-aligning nematic liquid crystals under simple shear flow is analyzed by linear stability analysis based on Leslie-Ericksen theory. It is pointed out that the equation of motion of the nematic director under simple shear flow conforms to the driven over-damped sine-Gordon equation and has a soliton solution of amplitude π. It has also been shown that the stationary state with the director uniformly oriented at a Leslie angle is only a metastable state and that the potential, which governs the motion of the director, has infinite numbers of stable stationary states. Therefore, the defects, appearing as a stable solitary solution, can be nucleated from a uniformly aligned flow-aligning type of nematic liquid crystal by shear flow. On the other hand, the bands with long axis parallel to the vorticity axis, appearing as an unstable solution, can be observed as transient patterns at low shear rate and low shear strain value. The theoretical predictions are compared with previous experimental observations.

  14. Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

    CERN Document Server

    Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

    2001-01-01

    It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

  15. Manifestation of intrinsic defects in optical properties of self-organized opal photonic crystals

    Science.gov (United States)

    Vlasov; Astratov; Baryshev; Kaplyanskii; Karimov; Limonov

    2000-05-01

    Self-organized synthetic opals possessing a face centered cubic (fcc) lattice are promising for fabrication of a three-dimensional photonic crystal with a full photonic band gap in the visible. The fundamental limiting factor of this method is the large concentration of lattice defects and, especially, planar stacking faults, which are intrinsic to self-assembling growth of colloidal crystal. We have studied the influence of various types of defects on photonic band structure of synthetic opals by means of optical transmission, reflection and diffraction along different crystallographic directions. We found that in carefully chosen samples the stacking probability alpha can be as high as 0.8-0.9 revealing the strong preference of fcc packing sequence over the hexagonal close-packed (hcp). It is shown that scattering on plane stacking faults located perpendicular to the direction of growth results in a strong anisotropy of diffraction pattern as well as in appearance of a pronounced doublet structure in transmission and reflection spectra taken from the directions other than the direction of growth. This doublet is a direct manifestation of the coexistence of two crystallographic phases--pure fcc and strongly faulted. As a result the inhomogeneously broadened stop-bands overlap over a considerable amount of phase space. The latter, however, does not mean the depletion of the photonic density of states since large disordering results in filling of the partial gaps with both localized and extended states.

  16. Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

    CERN Document Server

    Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

    2002-01-01

    It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

  17. Optical properties of a one-dimensional photonic crystal containing a graphene-based hyperbolic metamaterial defect layer.

    Science.gov (United States)

    Saleki, Ziba; Entezar, Samad Roshan; Madani, Amir

    2017-01-10

    The transmission properties of a one-dimensional defective photonic crystal have been investigated using the transfer matrix method. A layer of graphene-based hyperbolic metamaterial whose optical axis is tilted with respect to the interface is taken as a defect. It is shown that two kinds of the defect modes can be found in the band gaps of the structure for TM-polarized waves. One kind is created at the frequency range in which the principle elements of the effective permittivity tensor of the defect layer have the same signs. The frequency of this kind of defect mode is independent from the orientation of the optical axis of the defect layer. The other one is created at the hyperbolic dispersion frequency range. Such a defect mode appears due to the anisotropic behavior of the defect layer and its frequency strongly depends on the orientation of the optical axis. Unlike the conventional defect modes, the magnetic field of this defect mode is localized around the defect layer.

  18. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Kawasuso, A. [Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba 305-0044 (Japan)

    2012-11-15

    Hydrothermal grown ZnO single crystals were annealed in N{sub 2} or O{sub 2} between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N{sub 2} or O{sub 2} atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O{sub 2} ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O{sub 2} ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Rank-Defect Adjustment Model for Survey-Line Systematic Errors in Marine Survey Net

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    In this paper,the structure of systematic and random errors in marine survey net are discussed in detail and the adjustment method for observations of marine survey net is studied,in which the rank-defect characteristic is discovered first up to now.On the basis of the survey-line systematic error model,the formulae of the rank-defect adjustment model are deduced according to modern adjustment theory.An example of calculations with really observed data is carried out to demonstrate the efficiency of this adjustment model.Moreover,it is proved that the semi-systematic error correction method used at present in marine gravimetry in China is a special case of the adjustment model presented in this paper.

  20. Crystal science fundamentals

    OpenAIRE

    Ramachandran, V.; Halfpenny, PJ; Roberts, KJ

    2017-01-01

    The fundamentals of crystal science notably crystallography, crystal chemistry, crystal defects, crystal morphology and the surface chemistry of crystals are introduced with particular emphasis on organic crystals.

  1. Reduction of defective products by empiric analysis: the production line case in a factory of automotive parts.

    Science.gov (United States)

    Lugo-Telles, Ramses; de los Ángeles Navarrete, María

    2017-08-01

    As all massive line production, in the production line under study, exist the possibility of produce defective products, so like all companies based in continuous improvement, it wants to know all the facts about these defective products, for example, how many are they? in which areas do they arise? Why do they arise? And among other questions, in order to suggest and implement some solution alternatives

  2. Fabrication and modification of defects in Cu2ZnSnSe4 single crystals and thin films

    Science.gov (United States)

    Bishop, Douglas M.

    Cu2ZnSn(S,Se)4 solar cells have achieved the highest efficiency among non-toxic earth-abundant thin film solar materials, however low voltage in solar cell devices caused by band tailing and high levels of poorly understood defects bottleneck commercial relevance. Understanding and controlling the complex defect chemistry of the quaternary material is further inhibited by complexities in thin film materials such as grain boundaries, secondary phases and non-homogenous regions. In this work, single crystals are grown and used as a model system to advance the understanding of the defects controlling the electronic properties of Cu2ZnSnSe4. New methods of bulk crystal growth are developed without the use of an external flux agent leading to the growth of millimeter sized single crystals. The optoelectronic properties of both the surface and bulk are evaluated and controlled to reduce recombination and improve solar cell open circuit voltage. Passivation methods are developed for the surface, and new insights into the optimal bulk stoichiometry for solar cells are demonstrated. The effects of Na doping on sub-bandgap defects are shown, and the solubility limits of Na doping into the bulk CZTSe lattice is measured. Defect populations are further manipulated by annealing where the temperature and cool-down rate are controlled, which are shown to change sub-Eg defects critical for band-tailing. Single crystal Cu2ZnSnSe4 devices are demonstrated for the first time, and based on optimized methods for improving surface and bulk defects, a 7.8% efficient single crystal is demonstrated with a voltage equivalent to record thin film device.

  3. Roles of crystal defects in the persistent luminescence of Eu2+, Dy3+ co-doped strontium aluminate based phosphors

    Institute of Scientific and Technical Information of China (English)

    L(U) Xingdong; SHU Wangen

    2007-01-01

    The roles of different point defects in persistent luminescence of SrAl2O4:Eu,Dy phosphors were investigated. phors. It can serve as the electron trap of suitable depth for persistent luminescence. V(o) does not serve as the electron trap work as an effective electron trap. The point defect of V"Sr can be hole trap, but the change of its density in crystal matrix does not arouse the obvious change of persistent luminescence.

  4. A quantum-chemical study of oxygen-vacancy defects in PbTiO{sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stashans, Arvids [Laboratorio de Fisica, Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)]. E-mail: arvids@utpl.edu.ec; Serrano, Sheyla [Centro de Investigacion en Fisica de Materia Condensada, Corporacion de Fisica Fundamental y Aplicada, Apartado 17-12-637, Quito (Ecuador); Escuela de Ingenierias, Universidad Politecnica Salesiana, Campus Sur, Rumichaca s/n y Moran Valverde, Apartado 17-12-536, Quito (Ecuador); Medina, Paul [Centro de Investigacion en Fisica de Materia Condensada, Corporacion de Fisica Fundamental y Aplicada, Apartado 17-12-637, Quito (Ecuador)

    2006-05-31

    Investigation of an oxygen vacancy and F center in the cubic and tetragonal lattices of PbTiO{sub 3} crystals is done by means of quantum-chemical simulations. Displacements of defect-surrounding atoms, electronic and optical properties, lattice relaxation energies and some new effects due to the defects presence are reported and analyzed. A comparison with similar studies is made and conclusions are drawn on the basis of the obtained results.

  5. Effect of the defect on the focusing in a two-dimensional photonic-crystal-based flat lens

    Institute of Scientific and Technical Information of China (English)

    Feng Zhi-Fang; Wang Xiu-Guo; Li Zhi-Yuan; Zhang Dao-Zhong

    2008-01-01

    We have investigated in detail the influence of defect on the focusing of electromagnetic waves in a two-dimensional photonic-crystal flat lens by using the finite-difference time-domain mcthod. The result shows that many focusings can be observed at the symmetrical positions when a defect is introduced into the lens. Furthermore, the wave-guides in the lens can confine the transmission wave effectively and improve the quality of the focusing.

  6. Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation

    Science.gov (United States)

    Sedao, Xxx; Maurice, Claire; Garrelie, Florence; Colombier, Jean-Philippe; Reynaud, Stéphanie; Quey, Romain; Pigeon, Florent

    2014-04-01

    The influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures (LIPSS) has been investigated on a polycrystalline nickel sample. Electron Backscatter Diffraction characterization has been exploited to provide structural information within the laser spot on irradiated samples to determine the dependence of LIPSS formation and lattice defects (stacking faults, twins, dislocations) upon the crystal orientation. Significant differences are observed at low-to-medium number of laser pulses, outstandingly for (111)-oriented surface which favors lattice defects formation rather than LIPSS formation.

  7. Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation

    Energy Technology Data Exchange (ETDEWEB)

    Sedao, Xxx; Garrelie, Florence, E-mail: florence.garrelie@univ-st-etienne.fr; Colombier, Jean-Philippe; Reynaud, Stéphanie; Pigeon, Florent [Université de Lyon, CNRS, UMR5516, Laboratoire Hubert Curien, Université de Saint Etienne, Jean Monnet, F-42023 Saint-Etienne (France); Maurice, Claire; Quey, Romain [Ecole Nationale Supérieure des Mines de Saint-Etienne, CNRS, UMR5307, Laboratoire Georges Friedel, F-42023 Saint-Etienne (France)

    2014-04-28

    The influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures (LIPSS) has been investigated on a polycrystalline nickel sample. Electron Backscatter Diffraction characterization has been exploited to provide structural information within the laser spot on irradiated samples to determine the dependence of LIPSS formation and lattice defects (stacking faults, twins, dislocations) upon the crystal orientation. Significant differences are observed at low-to-medium number of laser pulses, outstandingly for (111)-oriented surface which favors lattice defects formation rather than LIPSS formation.

  8. The energy coupling efficiency of multi-wavelength laser pulses to damage initiating defects in DKDP nonlinear crystals

    Energy Technology Data Exchange (ETDEWEB)

    DeMange, P; Negres, R A; Rubenchik, A M; Radousky, H B; Feit, M D; Demos, S G

    2007-09-25

    The bulk damage performance of potassium dihydrogen phosphate crystals under simultaneous exposure to 1064-, 532-, and 355-nm nanosecond-laser pulses is investigated in order to probe the laser-induced defect reactions leading to damage initiation during frequency conversion. The results provide insight into the mechanisms governing the behavior of the damage initiating defects under exposure to high power laser light. In addition, it is suggested that the damage performance can be directly related to and predicted from the damage behavior of the crystal at each wavelength separately.

  9. Emulation of two-dimensional photonic crystal defect modes in a photonic crystal with a three-dimensional photonic band gap

    Energy Technology Data Exchange (ETDEWEB)

    Povinelli, M. L.; Johnson, Steven G.; Fan, Shanhui; Joannopoulos, J. D.

    2001-08-15

    Using numerical simulations, we demonstrate the construction of two-dimensional- (2D-) like defect modes in a recently proposed 3D photonic crystal structure. These modes, which are confined in all three dimensions by a complete photonic band gap, bear a striking similarity to those in 2D photonic crystals in terms of polarization, field profile, and projected band structures. It is expected that these results will greatly facilitate the observation of widely studied 2D photonic-crystal phenomena in a realistic, 3D physical system.

  10. Bridgman growth and defects of Nd3+ : Sr3Ga2Ge4O14 laser crystals

    Indian Academy of Sciences (India)

    Jiaxuan Ding; Anhua Wu; Jiayue Xu

    2004-08-01

    Nd3+ : Sr3Ga2Ge4O14 crystals have been grown by the modified Bridgman method. The growth defects, such as striations, scattering particles and dislocations were investigated. Some featherlike striations were observed in as-grown crystals. EPMA analysis suggested that these inclusions were caused by the segregation of Nd2O3 from the melt. Chemical etching results showed that the dislocation density was in the range of 103 ∼ 105/cm2.

  11. Structure Determination of the 1918 H1N1 Neuraminidase From a Crystal With Lattice-Translocation Defects

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, X.; Xu, X.; Wilson, I.A.

    2009-05-28

    Few examples of macromolecular crystals containing lattice-translocation defects have been published in the literature. Lattice translocation and twinning are believed to be two common but different crystal-growth anomalies. While the successful use of twinned data for structure determination has become relatively routine in recent years, structure determination of crystals with lattice-translocation defects has not often been reported. To date, only four protein crystal structures containing such a crystal defect have been determined, using corrected, but not uncorrected, intensity data. In this report, the crystallization, structure determination and refinement of N1 neuraminidase derived from the 1918 H1N1 influenza virus (18NA) at 1.65 {angstrom} resolution are described. The crystal was indexed in space group C222{sub 1}, with unit-cell parameters a = 117.7, b = 138.5, c = 117.9 {angstrom}, and the structure was solved by molecular replacement. The lattice-translocation vector in the 18NA crystal was (0, 1/2, 1/2) or its equivalent vector (1/2, 0, 1/2) owing to the C lattice symmetry. Owing to this special lattice-translocation vector in space group C222{sub 1}, structure refinement could be achieved in two different ways: using corrected or uncorrected diffraction data. In the refinement with uncorrected data, a composite model was built to represent the molecules in the translated and untranslated layers, respectively. This composite structure model provided a unique example to examine how the molecules were arranged in the two lattice domains resulting from lattice-translocation defects.

  12. A Defect Effect to Light Transmission through Acute Bending Coupled Cavity Waveguide in a Two-Dimensional Photonic Crystal

    Institute of Scientific and Technical Information of China (English)

    HUANG Yin; LU Yan-Wu

    2009-01-01

    @@ Light propagation through a coupled-defect waveguide with a 63.5°bend in a two-dimensional (2D) photonic crystal is investigated. The waveguide modes are non-degenerate monopole state and dipole defect state of a square lattice for two different branches. To increase the transmission in the bending waveguide, we propose a method to rotate the localized state by introducing a new type defect with a sheared square rod into coupled cavity. The higher coupling efficiency and transmission in the bending waveguide are obtained with proper shear shift.

  13. All-optical diode effect of a nonlinear photonic crystal with a defect

    Institute of Scientific and Technical Information of China (English)

    WANG Wei-jiang; ZHOU Jin-yun; XIAO Wan-neng

    2006-01-01

    An all-optical diode behavior that uses a nonlinear one-dimensional photonic crystal (NPC) with a defect Kerr medium is numerically simulated by the use of a nonlinear finite-difference time-domain (NFDTD) method.The numerical results show that for an incident pulse with appropriate intensity and temporal width,the transmittance can be several times greater in one direction of NPC than in the opposite direction at the pulse carrier frequency. This behaves like an all-optical diode and has promising applications in some areas such as optical isolation and all-optical processing.The ways to obtain low threshold of pulse field strength to realize an all-optical diode are also analyzed in detail.

  14. Defects in electron-irradiated MgOxnAl/sub 2/O/sub 3/ crystals

    Energy Technology Data Exchange (ETDEWEB)

    Gritsyna, V.T.; Gritsenko, N.V.; Kobyakov, V.A. (Khar' kovskij Gosudarstvennyj Univ. (Ukrainian SSR))

    1984-01-01

    Using the methods of optical and EPR spectroscopy point defects in crystals of magnesium-aluminium spinel of the MgOxAl/sub 2/O/sub 3/ and MgOx2.5Al/sub 2/O/sub 3/ composition after-irradiation with high-energy (14 MeV) electrons have been studied. Based an comparing the intensity of optical absorption bands versus the irradiation dose (from 3 x 10/sup 14/ to 9 x 10/sup 15/ el x cm/sup -2/) and EPR signals, and on angular dependences of the EPR spectram the spectroscopic characteristics and structure of monoelectron and monohole centres are determined.

  15. High-density G-centers, light-emitting point defects in silicon crystal

    Directory of Open Access Journals (Sweden)

    Koichi Murata

    2011-09-01

    Full Text Available We propose a new method of creating light-emitting point defects, or G-centers, by modifying a silicon surface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation of highly dense G-centers by incorporating carbon atoms into the silicon during heating; freezing in the created G-centers during rapid cooling. The method provides a surface region of up to 200 nm with highly dense carbon atoms of up to 4 × 1019 cm−3 to create G-centers, above the solubility limit of carbon atoms in silicon crystal (3 × 1017 cm−3. Photoluminescence measurement reveals that the higher-speed laser annealing produces stronger G-center luminescence. We demonstrate electrically-driven emission from the G-centers in samples made using our new method.

  16. Weyl Points and Line Nodes in Gyroid Photonic Crystals

    Science.gov (United States)

    2013-04-01

    characterization of millimetre-scale replicas of the gyroid photonic crystal found in the butterfly parides sesostris. Interface Focus 2, 645–650...Structure, function, and self-assembly of single network gyroid (I4132) photonic crystals in butterfly wing scales. Proc. Natl Acad. Sci. USA 107...948–954 (2003). 43. Turner, M., Schröder-Turk, G. & Gu, M. Fabrication and characterization of three-dimensional biomimetic chiral composites. Opt

  17. Superovulation induces defective methylation in line-1 retrotransposon elements in blastocyst.

    Science.gov (United States)

    Liang, Xing-Wei; Cui, Xiang-Shun; Sun, Shao-Chen; Jin, Yong-Xun; Heo, Young Tae; Namgoong, Suk; Kim, Nam-Hyung

    2013-07-18

    Series of epigenetic events happen during preimplantation development. Therefore assistant reproduction techniques (ART) have the potential to disrupt epigenetic regulation during embryo development. The purpose of this study was to investigate whether defects in methylation patterns in blastocyst due to superovulation originate from abnormal expression of Dnmts. Low- (6 IU) and high- (10 IU) dosage of PMSG was used to stimulate the female mice. The metaphase II(MII) oocytes, zygotes and blastocyst stage embryos were collected. Global methylation and methylation at H3K9 in zygote, and methylation at repeated sequence Line 1 and IAP in blastocysts were assayed. In addition, expression of Dnmts was examined in oocytes and zygotes. Global DNA methylation and methylation at H3K9 in zygotes derived from females after low- or high-dosage hormone treatment were unaltered compared to that in controls. Moreover, DNA methylation at IAP in blastocysts was also unaffected, regardless of hormone dosage. In contrast, methylation at Line1 decreased when high-dose hormone was administered. Unexpectedly, expression of Dnmt3a, Dnmt3b, Dnmt3L as well as maintenance Dnmt1o in oocytes and zygotes was not disrupted. The results suggest that defects in embryonic methylation patterns do not originate from the disruption of Dnmt expression.

  18. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    Energy Technology Data Exchange (ETDEWEB)

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  19. Micromechanics model of liquid crystal anisotropic triple lines with applications to self-assembly.

    Science.gov (United States)

    Rey, Alejandro D; Valencia, E E Herrera

    2010-08-17

    Directed self-assembly of mesophases at three phase contact lines has been reported for a variety of solutions, including micelles, tobacco mosaic virus, DNA, silk, and others, through the action of capillary forces, wetting processes, and/or evaporation. This communication presents a new micromechanical line-excess model of the anisotropic contact line tension for nematic liquid crystal phases, which incorporates well characterized liquid crystal interfacial tensions. The anisotropic line tension is then used to formulate the contact line torque that promotes the azimuthal orientation, widely reported experimentally. The dependence of the line torque strength on the contact angle reveals the conditions that promote azimuthal orientational ordering close to the contact line. This work is limited to anisotropic line-excess tension, and wetting and evaporation processes are outside its scope.

  20. Crystal growth, defects, and mechanical and spectral properties of a novel mixed laser crystal Nd:GdYNbO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Shoujun; Dou, Renqin [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Peng, Fang; Luo, Jianqiao; Sun, Guihua; Sun, Dunlu [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)

    2017-01-15

    A mixed laser crystal of Nd-doped GYNO crystal was grown successfully by Czochralski method. The crystal belongs to monoclinic system with space group I2/a, the structural parameters are obtained by the X-ray Rietveld refinement method. The defects and dislocations along three crystallographic orientations were studied by using the chemical etching method with the phosphoric acid etchant. The mechanical properties (including hardness, yield strength, fracture toughness, and brittle index) of the crystal were estimated by Vickers hardness test. The transmission spectrum was measured at room temperature, and the absorption peaks were assigned. Spectral properties of the as-grown crystal were investigated by Judd-Ofelt theory, and the Judd-Ofelt intense parameters Ω{sub 2,4,6} were obtained to be 9.674 x 10{sup -20}, 2.092 x 10{sup -20}, and 4.061 x 10{sup -20} cm{sup 2}, respectively. (orig.)

  1. Defected-core photonic crystal fiber magnetic field sensor based on Sagnac interferometer

    Science.gov (United States)

    Liu, Qiang; Li, Shuguang; Dou, Chao; Wang, Xinyu

    2017-03-01

    A high-sensitivity magnetic field sensor based on photonic crystal fiber (PCF) Sagnac interferometer is proposed by finite element method (FEM). The elliptical-hole PCF is injected with water-based magnetic fluid. The fiber core is introduced in an elliptical hole to act as a defected core. The sensitivities are 13.25 and -14.32 nm/Oe at the wavelength of 1750 and 1780 nm, respectively, as the magnetic field H is 100 Oe. The simulation result shows that the sensitivity is extremely high near the wavelength of 1765 nm, because the group birefringence Bg is about zero at that wavelength. The above theory is examined in a different configuration by the transmission mode. The average sensitivities are 0.265, 1.63 and -1.915 nm/Oe, respectively, for the dip wavelength A, B and C as the fiber length is 5 cm. The detecting window is 60Oe. We also demonstrate that the sensitivity can be greatly enhanced by 1-2 orders of magnitude by introducing a defected core.

  2. Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: Implications for intrinsic point defect incorporation during crystal growth from a melt

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji; Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Vanhellemont, Jan [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Gent 9000 (Belgium)

    2012-10-15

    The microscopic model of the Si (001) crystal surface was investigated by first principles calculations to clarify the behavior of intrinsic point defects near crystal surfaces. A c(4 x 2) structure model was used to describe the crystal surface in contact with vacuum. The calculations show lower formation energy near the surface and the existence of formation energy differences between the surface and the bulk for both types of intrinsic point defects. The tetrahedral (T)-site and the dumbbell (DB)-site, in which a Si atom is captured from the surface and forms a self-interstitial, are found as stable sites near the third atomic layer. The T-site has a barrier of 0.48 eV, whereas the DB-site has no barrier for the interstitial to penetrate into the crystal from the vacuum. Si atoms in a melt can migrate and reach at the third layer during crystal growth when bulk diffusion coefficient is used. Therefore, the melt/solid interface is always a source of intrinsic point defects. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Paramagnetic and diamagnetic defects in e - and UV-irradiated TeO 2 single crystal

    Science.gov (United States)

    Watterich, A.; Kappers, L. A.; Gilliam, O. R.; Bartram, R. H.; Földvári, I.; Korecz, L.

    2002-05-01

    A study is reported of the influence of illumination on generation and decay of point defects in TeO 2 crystals following electron irradiation at ˜400 K. Electron irradiation is believed to cause a large concentration of diamagnetic oxygen vacancies denoted by V Ox and a smaller concentration of vacancies with one trapped electron denoted by V Orad . When the sample is UV illuminated at 330 nm and 77 K or lower, electron spin resonance (ESR) measurements show that the number of V Orad centers increases and a comparable gain of V O' centers (three electrons in the vacancy) occurs. A brief illumination at 660 nm causes the V O' signal to disappear and the V Orad signal to decrease and return to its original value. Changes in the crystal's optical absorption obtained from spectra measured with polarized light are given. When V O' centers are removed by bleaching, or by thermal annealing, broad bands at 600 and 700 nm disappear and there are increases in optical absorption at 380, 440 and 480 nm. The source of these bands is discussed. These processes are reversed by a new UV illumination at 330 nm and 77 K. The growth and decay kinetics of V O' centers and V Orad centers measured by ESR indicate the same rates of percentage change in their concentrations. Explanation of these reversible processes supports selected models for the three different vacancy centers.

  4. Recent developments in magnetic resonance studies of defects in ionic crystals

    OpenAIRE

    Spaeth, Johann-Martin

    1980-01-01

    Recent applications of ESR, NMR and ENDOR to the following investigations are briefly reviewed : motional effects of point defects, influence of structural phase transitions on defects, self diffusion, dislocation motion, structure of low symmetry defects, excited states of defects. The application of ENDOR-induced ESR to solid state defects is briefly described. It allows the analysis of superimposed ESR and ENDOR spectra due to several defects and facilitates also the analysis of ENDOR spec...

  5. Determination of three-dimensional strain state in crystals using self-interfered split HOLZ lines

    Energy Technology Data Exchange (ETDEWEB)

    Herring, Rodney, E-mail: rherring@uvic.ca [CAMTEC, MENG, University of Victoria, British Columbia, Canada V8W 2Y2 (Canada); Norouzpour, Mana [CAMTEC, MENG, University of Victoria, British Columbia, Canada V8W 2Y2 (Canada); Saitoh, Koh; Tanaka, Nobuo; Tanji, Takayoshi [EcoTopia, Nagoya University, Nagoya 461-8603 (Japan)

    2015-09-15

    An experimental method to measure the strain through the thickness of a crystal is demonstrated. This enables the full three-dimensional stress–strain state of a crystal at the nanoscale to be determined taking the current practice from two-dimensional strain state determination. Knowing the 3D strain state is desired by crystal growers in order to improve their crystal's quality. This method involves combining electron diffraction with electron interferometry in a transmission electron microscope. The electron diffraction uses a split higher order Laue zone (HOLZ) line and the electron interferometry uses an electron biprism.

  6. Ultrasonic crystallization monitoring technique for simultaneous in-line measurement of liquid and solid phase

    Science.gov (United States)

    Stelzer, T.; Pertig, D.; Ulrich, J.

    2013-01-01

    The mean crystal size, the suspension density and the liquid concentration are the three most important process parameters to quantify the progress of industrial crystallization processes. It will be shown that these parameters can be in-line monitored simultaneously by means of an ultrasonic crystallization monitoring technique (UCM), which will be introduced here in a proof of concept. This process analytical technology (PAT) differs from the known ultrasonic attenuation spectroscopy (UAS). For the UCM the ultrasonic velocity and attenuation were correlated and related to characteristic events during a crystallization process measured at only one frequency (no spectra of frequencies as it is used for UAS). The results shown in this study prepare the ground to establish the UCM as a simple, less complex, robust, universal applicable, inexpensive and, therefore, a winning alternative PAT to monitor and control in-line the solid as well as the liquid phase in the industrial crystallization by means of only one measuring device with two sensors.

  7. Applying Ant Colony Algorithm and Neural Network Model to Color Deviation Defect Detection in Liquid Crystal Displays

    Directory of Open Access Journals (Sweden)

    Hong-Dar Lin

    2005-06-01

    Full Text Available Thin Film Transistor Liquid Crystal Display (TFT-LCD has excellent properties such as lower voltage to start and less occupied space if comparing with traditional Cathode-Ray Tube (CRT. But screen flaw points and display color deviation defects on image display exist in TFT-LCD products. This research proposes a new automated visual inspection method to solve the problems. We first use multivariate Hotelling T2 statistic for integrating coordinates of color models to construct a T2 energy diagram for inspecting defects and controlling patterns in TFT-LCD display images. An Ant Colony based approach that integrates computer vision techniques is developed to detect the flaw point defects. Then, Back Propagation Network (BPN model is proposed to inspect small deviation defects of the LCD display colors. Experimental results show the proposed system can provide good effects and practicality.

  8. In-line print defect inspection system based on parallelized algorithms

    Science.gov (United States)

    Lv, Chao; Zhou, Hongjun

    2015-03-01

    The core algorithm of an on-line print defects detection system is template matching. In this paper, we introduce a kind of edge-based template matching based on Canny's edge detection method to find the edge information and do the matching work. Of all the detection algorithms, the most difficult problem is execution time, in order to reduce the execution time and improve the efficiency of execution, we introduce four different ways to solve and compare. They are Pyramidal algorithm, Multicore and Multi-Threading algorithm based on OpenMP, a Parallel algorithm based on Intel AVX Instruction Set, GPU computing based on OpenCL model. Through the results, we can find different characters of different ways, and then choose the best for your own system.

  9. Identification of in-line defects and failures during Additive Manufacturing Powder Bed Fusion processes

    Directory of Open Access Journals (Sweden)

    Fulga Simina

    2017-01-01

    Full Text Available Additive Manufacturing (AM processes are enablers of new approaches in the field of production and design engineering, product design and business modelling. Beginning to view additive manufacturing in an industrial environment, reliable statements about the product quality are indispensable. Statements regarding compliance with geometric tolerances and exact quantifiable physical parameters, in terms of product certification are therefore imperative. The quality of the components must not only be sustainably secured but also reproducible at any time. Quality control and quality assurance are the prerequisite for highly customized unique parts, or even batch size 1 product, that can be produced by additive manufacturing as efficiently as conventional mass-produced parts. This paper will discuss an approach for the identification of in-line defects and failures during Additive Manufacturing Powder Bed Fusion processes using the example of the Selective Laser Sintering process.

  10. A method for analyzing on-line video images of crystallization at high-solid concentrations

    Institute of Scientific and Technical Information of China (English)

    Jian Wan; Cai Y.Ma; Xue Z.Wang

    2008-01-01

    Recent research has demonstrated that on-line video imaging is a very promising technique for monitoring crystallization processes. The bottleneck in applying the technique for real-time closed-loop control is considered as image analysis that needs to be robust, fast and able to handle varied image qualities due to temporal variations of operating conditions such as mixing and solid concentrations. Image analysis at high-solid concentrations turns out to be extremely challenging because crystals tend to overlap or attach to each other and the boundaries between the crystals are usually ambiguous. This paper presents an image segmentation algorithm that can effectively deal with images taken at high-solid concentrations. The method segments crystals attached to each other along the mostly related concave points on the contours of crystal blocks. The detailed procedure is introduced with application to crystallization of L-glutamic acid in a hot-stage reactor.

  11. Position Dependent Spontaneous Emission Spectra of a A-Type Atomic System Embedded in a Defective Photonic Crystal

    Institute of Scientific and Technical Information of China (English)

    S. Roshan Entezar

    2012-01-01

    We investigate the position dependent spontaneous emission spectra of a A-type three-level atom with one transition coupled to the free vacuum reservoir and the other one coupled to a double-band photonic band gap reservoir with a defect mode in the band gap. It is shown that, for the atom at the defect location, we have a two-peak spectrum with a wide dark line due to the strong coupling between the atom and the defect mode. While, when the atom is far from the defect location (or in the absence of the defect mode), the spectrum has three peaks with two dark lines due to the coupling between the atom and the photonic band gap reservoir with the largest density of states near the band edges. On the other hand, we have a four-peak spectrum for the atom at the space in between. Moreover, the average spontaneous emission spectra of the atoms uniformly embedded in high dielectric or low dielectric regions are described. It is shown that the atoms embedded in high (low) dielectric regions far from the defect location, effectively couple to the modes of the lower (upper) photonic band. However, the atoms embedded in high dielectric or low dielectric regions at the defect location, are coupled mainly to the defect modes. While, the atoms uniformly embedded in high (low) dielectric regions with a normal distance from the defect location, are coupled to both of defect and lower (upper) photonic band modes.

  12. Large-bandwidth planar photonic crystal waveguides

    DEFF Research Database (Denmark)

    Søndergaard, Thomas; Lavrinenko, Andrei

    2002-01-01

    A general design principle is presented for making finite-height photonic crystal waveguides that support leakage-free guidance of light over large frequency intervals. The large bandwidth waveguides are designed by introducing line defects in photonic crystal slabs, where the material in the line...... defect has appropriate dispersion properties relative to the photonic crystal slab material surrounding the line defect. A three-dimensional theoretical analysis is given for large-bandwidth waveguide designs based on a silicon-air photonic crystal slab suspended in air. In one example, the leakage...

  13. Introduction of a planar defect in a molecularly imprinted photonic crystal sensor for the detection of bisphenol A.

    Science.gov (United States)

    Griffete, Nébéwia; Frederich, Hugo; Maître, Agnès; Schwob, Catherine; Ravaine, Serge; Carbonnier, Benjamin; Chehimi, Mohamed M; Mangeney, Claire

    2011-12-01

    This paper reports the preparation of a molecularly imprinted inverse opal hydrogel containing a 2D defect layer, by combining the Langmuir-Blodgett technique and the photonic crystal template method. By coupling the exceptional characteristics of molecularly imprinted polymers, sensitive to the presence of a target molecule, and those of photonic crystals in a single device, we could obtain a defect-embedded imprinted photonic polymer consisting in a three-dimensional, highly-ordered and interconnected macroporous array, where nanocavities complementary to analytes in shape and binding sites are distributed. As a proof of concept, we prepared a three-dimensional macroporous array of poly(methacrylic acid) (PMAA) containing molecular imprints of bisphenol A (BPA) and a planar defect layer consisting in macropores of different size. The optical properties of the resulting inverse opal were investigated using reflection spectroscopy. The defect layer was shown to enhance the sensitivity of the photonic crystal material, opening new possibilities towards the development smart optical sensing devices.

  14. Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals

    Science.gov (United States)

    Yaqoob, Faisal; Huang, Mengbing

    2016-07-01

    This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ˜150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 1016 cm-2, close to the depth ˜250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

  15. Modeling Defects, Shape Evolution, and Programmed Auto-origami in Liquid Crystal Elastomers

    Directory of Open Access Journals (Sweden)

    Andrew eKonya

    2016-06-01

    Full Text Available Liquid crystal elastomers represent a novel class of programmable shape-transforming materials whose shape change trajectory is encoded in the material’s nematic director field. Using three-dimensional nonlinear finite element elastodynamics simulation, we model a variety of different actuation geometries and device designs: thin films containing topological defects, patterns that induce formation of folds and twists, and a bas-relief structure. The inclusion of finite bending energy in the simulation model reveals features of actuation trajectory that may be absent when bending energy is neglected. We examine geometries with a director pattern uniform through the film thickness encoding multiple regions of positive Gaussian curvature. Simulations indicate that heating such a system uniformly produces a disordered state with curved regions emerging randomly in both directions due to the film’s up/down symmetry. By contrast, applying a thermal gradient by heating the material first on one side breaks up/down symmetry and results in a deterministic trajectory producing a more ordered final shape. We demonstrate that a folding zone design containing cut-out areas accommodates transverse displacements without warping or buckling; and demonstrate that bas-relief and more complex bent/twisted structures can be assembled by combining simple design motifs.

  16. Characteristics of Highly Birefringent Photonic Crystal Fiber with Defected Core and Equilateral Pentagon Architecture

    Directory of Open Access Journals (Sweden)

    Fei Yu

    2016-01-01

    Full Text Available A novel high birefringence and nearly zero dispersion-flattened photonic crystal fiber (PCF with elliptical defected core (E-DC and equilateral pentagonal architecture is designed. By applying the full-vector finite element method (FEM, the characteristics of electric field distribution, birefringence, and chromatic dispersion of the proposed E-DC PCF are numerically investigated in detail. The simulation results reveal that the proposed PCF can realize high birefringence, ranging from 10-3 to 10-2 orders of magnitude, owing to the embedded elliptical air hole in the core center. However, the existence of the elliptical air hole gives rise to an extraordinary electric field distribution, where a V-shaped notch appears and the size of the V-shaped notch varies at different operating wavelengths. Also, the mode field diameter is estimated to be about 2 μm, which implies the small effective mode area and highly nonlinear coefficient. Furthermore, the investigation of the chromatic dispersion characteristic shows that the introduction of the elliptical air hole is helpful to control the chromatic dispersion to be negative or nearly zero flattened over a wide wavelength bandwidth.

  17. Modeling Defects, Shape Evolution, and Programmed Auto-origami in Liquid Crystal Elastomers

    Science.gov (United States)

    Konya, Andrew; Gimenez-Pinto, Vianney; Selinger, Robin

    2016-06-01

    Liquid crystal elastomers represent a novel class of programmable shape-transforming materials whose shape change trajectory is encoded in the material’s nematic director field. Using three-dimensional nonlinear finite element elastodynamics simulation, we model a variety of different actuation geometries and device designs: thin films containing topological defects, patterns that induce formation of folds and twists, and a bas-relief structure. The inclusion of finite bending energy in the simulation model reveals features of actuation trajectory that may be absent when bending energy is neglected. We examine geometries with a director pattern uniform through the film thickness encoding multiple regions of positive Gaussian curvature. Simulations indicate that heating such a system uniformly produces a disordered state with curved regions emerging randomly in both directions due to the film’s up/down symmetry. By contrast, applying a thermal gradient by heating the material first on one side breaks up/down symmetry and results in a deterministic trajectory producing a more ordered final shape. We demonstrate that a folding zone design containing cut-out areas accommodates transverse displacements without warping or buckling; and demonstrate that bas-relief and more complex bent/twisted structures can be assembled by combining simple design motifs.

  18. Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.

  19. Contribution of Disclination Lines to Free Energy of Liquid Crystals in Single-Elastic Constant Approximation

    Institute of Scientific and Technical Information of China (English)

    YANGGuo-Hong; WANGYu-Sheng; DUANYi-Shi

    2004-01-01

    In the light of C-mapping method and topological current theory, the contribution of disclination lines to free energy density of liquid crystals is studied in the single-elastic constant approximation. It is pointed out that the total free energy density can be divided into two parts. One is the usual distorted energy density of director field around the disclination lines. The other is the free energy density of disclination lines themselves, which is shown to be centralized at the disclination lines and to be topologically quantized in the unit of kn/2. The topological quantum numbers are determined by the Hopf indices and Brouwer degrees of the director l~eld at the disclination lines, i.e. the disclination strengths. From the Lagrange's method of multipliers, the equilibrium equation and the molecular field ofliquid crystals are also obtained. The physical meaning of the Lagrangian multiplier is just the distorted energy density.

  20. Contribution of Disclination Lines to Free Energy of Liquid Crystals in Single-Elastic Constant Approximation

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-Hong; WANG Yu-Sheng; DUAN Yi-Shi

    2004-01-01

    In the light of φ-mapping method and topological current theory, the contribution of disclination lines to free energy density of liquid crystals is studied in the single-elastic constant approximation. It is pointed out that the total free energy density can be divided into two parts. One is the usual distorted energy density of director field around the disclination lines. The other is the free energy density of disclination lines themselves, which is shown to be centralized at the disclination lines and to be topologically quantized in the unit of kπ /2. The topological quantum numbers are determined by the Hopf indices and Brouwer degrees of the director field at the disclination lines, i.e. the disclination strengths. From the Lagrange's method of multipliers, the equilibrium equation and the molecular field of liquid crystals are also obtained. The physical meaning of the Lagrangian multiplier is just the distorted energy density.

  1. Large-bandwidth planar photonic crystal waveguides

    DEFF Research Database (Denmark)

    Søndergaard, Thomas; Lavrinenko, Andrei

    2002-01-01

    A general design principle is presented for making finite-height photonic crystal waveguides that support leakage-free guidance of light over large frequency intervals. The large bandwidth waveguides are designed by introducing line defects in photonic crystal slabs, where the material in the lin......-free single-mode guidance is found for a large frequency interval covering 60% of the photonic band-gap.......A general design principle is presented for making finite-height photonic crystal waveguides that support leakage-free guidance of light over large frequency intervals. The large bandwidth waveguides are designed by introducing line defects in photonic crystal slabs, where the material in the line...... defect has appropriate dispersion properties relative to the photonic crystal slab material surrounding the line defect. A three-dimensional theoretical analysis is given for large-bandwidth waveguide designs based on a silicon-air photonic crystal slab suspended in air. In one example, the leakage...

  2. Growth, Optical Properties and Defects of High-Doped Yb∶YAl3(BO3)4 Crystal

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High-doped Yb∶YAl3 (BO3)4 (Yb∶YAB) crystals were grown by the flux method using K2Mo3O10 as the flux. The efficient segregation coefficient was measured by using EPMA. The absorption and fluorescence spectra was measured at room temperature and compared the spectral parameters with Yb∶YAB of other Yb3+ concentrations. With the increase of the Yb3+ concentration, the main absorption and fluorescence peaks almost do not change, but the absorption coefficient and FWHM increase. The defects were investigated by using chemical etching method. The main defects are cracks, inclusions, dislocations and twins, which of them are more than low-doped crystals.

  3. Literature Review: Theory and Application of In-Line Inspection Technologies for Oil and Gas Pipeline Girth Weld Defection

    Directory of Open Access Journals (Sweden)

    Qingshan Feng

    2016-12-01

    Full Text Available Girth weld cracking is one of the main failure modes in oil and gas pipelines; girth weld cracking inspection has great economic and social significance for the intrinsic safety of pipelines. This paper introduces the typical girth weld defects of oil and gas pipelines and the common nondestructive testing methods, and systematically generalizes the progress in the studies on technical principles, signal analysis, defect sizing method and inspection reliability, etc., of magnetic flux leakage (MFL inspection, liquid ultrasonic inspection, electromagnetic acoustic transducer (EMAT inspection and remote field eddy current (RFDC inspection for oil and gas pipeline girth weld defects. Additionally, it introduces the new technologies for composite ultrasonic, laser ultrasonic, and magnetostriction inspection, and provides reference for development and application of oil and gas pipeline girth weld defect in-line inspection technology.

  4. Literature Review: Theory and Application of In-Line Inspection Technologies for Oil and Gas Pipeline Girth Weld Defection.

    Science.gov (United States)

    Feng, Qingshan; Li, Rui; Nie, Baohua; Liu, Shucong; Zhao, Lianyu; Zhang, Hong

    2016-12-28

    Girth weld cracking is one of the main failure modes in oil and gas pipelines; girth weld cracking inspection has great economic and social significance for the intrinsic safety of pipelines. This paper introduces the typical girth weld defects of oil and gas pipelines and the common nondestructive testing methods, and systematically generalizes the progress in the studies on technical principles, signal analysis, defect sizing method and inspection reliability, etc., of magnetic flux leakage (MFL) inspection, liquid ultrasonic inspection, electromagnetic acoustic transducer (EMAT) inspection and remote field eddy current (RFDC) inspection for oil and gas pipeline girth weld defects. Additionally, it introduces the new technologies for composite ultrasonic, laser ultrasonic, and magnetostriction inspection, and provides reference for development and application of oil and gas pipeline girth weld defect in-line inspection technology.

  5. Single crystal zeeman effect studies on 35Cl NQR lines of 2,6-dichlorophenol

    Science.gov (United States)

    Prasad, N. V. L. N.; Venkatacharyulu, P.; Premaswarup, D.

    1987-10-01

    Zeeman effect studies on the two 35Cl NQR lines in cylindrical single crystals of 2,6-dichlorophenol were carried out using a self-quenched super-regenerative NQR spectrometer to obtain information on the nature of the crystalline unit cell and the effect of hydrogen bonding on the electric field gradient tensor. Analysis of the experimental data reveals: (1) the results are in good agreement with those reported from X-ray studies; (2) the crystal is unequivocally identified as belonging to the orthorhombic system; (3) there are two crystallographically equivalent and four physically nonequivalent directions for the principal field gradients for both the low and high frequency resonance lines; (4) the directions of the crystalline a, b, c axes are uniquely identified as (90°, 0°), (0°, -), and (90°, 90°); (5) the b-axis is identified as the growth axis; (6) there are a minimum of four molecules per unit cell, the four molecules lie in different planes, which are, however, connected by symmetry operations; (7)_there exists a weak intramolecular hydrogen bonding in the crystal; (8) the asymmetry parameters for the loci corresponding to the low frequency resonance line, which is affected by hydrogen bonding, are less than the asymmetry parameters of the loci corresponding to the high frequency resonance line, which is not affected by hydrogen bonding; (9) the single bond and ionic bond characters for the hish frequency line are less than that of the low frequency line, while the double bond character for the low frequency line is less than that of the high frequency line and (10) the small deviation between the single bond and double bond characters of the two resonance lines is attributed to the existence of weak hydrogen bonding in the crystal.

  6. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  7. Surface plasmon polariton propagation along a 90 degrees bent line defect in a periodically corrugated metal surface

    DEFF Research Database (Denmark)

    Bozhevolnyi, S.I.; Volkov, V.S.; Leosson, Kristjan

    2001-01-01

    Propagation of surface plasmon polaritons (SPPs) excited in the wavelength range of 720-860 nm at a gold (45-nm-thick) film surface with lithographically fabricated (170-nm-wide and 50-nm-high) scatterers arranged in a 400-nm-period triangular lattice containing a 90 degrees bent line defect...

  8. Defect study by sub-second relaxation of the internal field after polarization reversal in lithium niobate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ro, Jung Hoon; Kim, Tae Hoon; Ro, Ji Hyun; Cha, Myoung Sik [Pusan National Univ., Pusan (Korea, Republic of)

    2002-03-01

    The difficulty in measuring the fast response of the coercive field in lithium-niobate (LN) crystals after polarization reversal was overcome by using the partial poling method. The measurement revealed two distinct relaxations of the internal field in LN crystals. Their physical origins are discussed using a non-stoichiometric defect model of LN based on the fact that the functional form of the experimental data was found to be a stretched exponential. The magnitude of the internal field was expected to be proportional to the defect concentration, which was verified using samples with reduced defect concentrations which were fabricated using the vapor transport equilibration method. This experimental method may be used as a useful defect characterization technique. The inherent coercive field of stoichiometric LN was expected to be 1.1 {approx} 1.5 kV/mm by subtracting the total contributions of the internal field and the wall-velocity-dependent terms from the measured poling field of congruent LN ({approx} 21 kV/mm)

  9. Determination and observation of electronic defect levels in CuInSe sub 2 crystals and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Elfotouh, F.A.; Kazmerski, L.L.; Moutinho, H.R.; Wissel, J.M.; Dhere, R.G.; Nelson, A.J.; Bakry, A.M. (Solar Energy Research Institute, Golden, Colorado 80401 (US))

    1991-05-01

    The effects of heat and surface treatments used in the fabrication of CuInSe{sub 2} (CIS) single-crystal and thin-film solar cells are investigated, and the associated dominant defect states are identified using high-resolution photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements. The results are correlated with junction electrical characteristics, and comparisons between thin films and single crystals are established. For the first time, direct evidence for several major defect types (Cu vacancies, Cu at In sites, and In at Cu sites) responsible for the majority-carrier type of the CIS is presented based upon spectroscopic atomic imaging of the {ital n}- and {ital p}-type semiconductor surfaces. Radiative recombination levels of extrinsic origin resulting from the surface processing (including polishing, etching, and annealing) were detected in the near surface region of the CIS single crystals, but not in the thin-film material having the same composition. The energy locations and depth of these states are responsible for the formation of an interfacial layer that is confirmed from frequency-dependent capacitance--voltage ({ital C}--{ital V}) data. The DLTS measurements on single-crystal and thin-film heterostructure {l brace}i.e., (Cd,Zn)S/CIS{r brace} devices (of nearly identical chemical compositions) have also confirmed the presence of a dominant trap level in the 270-meV region above the valance band. However, the trap density is some two orders of magnitude lower in the thin-film device, giving evidence that this processing-related defect level is responsible for the inferior performance of the single-crystal solar cells.

  10. Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ryningen, Birgit

    2008-07-01

    crucible bottom and the subsequent growth is governed by dislocations. For the other type of ingots which is dominated by twins and has a higher minority carrier lifetime, a higher undercooling has occurred before crystal nucleation. It is suggested that this undercooling can reach the critical value for dendritic nucleation to occur (10 K). After dendritic nucleation, subsequent crystal growth is dominated by twins. Nucleation and multiplication mechanisms for dislocations are complex, and investigations on a microscopic scale have been performed. Mechanisms such as punch-out from precipitates with a thermal expansion coefficient different from that of the silicon matrix, intergranular - and intragranular hardening and development of strain fields due to differences in the elasticity module between different grains are thought to play a role in the nucleation of dislocations higher up in the cast. The multiplication has been explained by a macroscopic stress field at the solidification front, stresses developed during cooling and pinning by oxygen impurities. For dislocations nucleated by an angular grain boundary a multiplication and growth mechanism is proposed where dislocations can cross slip and line up at certain crystallographic directions during crystal growth. (Author). 134 refs., 29 figs., 4 tabs

  11. Comparison of atomistic and elasticity approaches for carbon diffusion near line defects in {alpha}-iron

    Energy Technology Data Exchange (ETDEWEB)

    Veiga, R.G.A., E-mail: rgaveiga@gmail.com [Universite de Lyon, INSA Lyon, Laboratoire MATEIS, UMR CNRS 5510, 25 Avenue Jean Capelle, F69621, Villeurbanne (France); Perez, M. [Universite de Lyon, INSA Lyon, Laboratoire MATEIS, UMR CNRS 5510, 25 Avenue Jean Capelle, F69621, Villeurbanne (France); Becquart, C.S. [Unite Materiaux et Transformations (UMET), Ecole Nationale Superieure de Chimie de Lille, UMR CNRS 8207, Bat. C6, F59655 Villeneuve d' Ascq Cedex (France); Laboratoire commun EDF-CNRS Etude et Modelisation des Microstructures pour le Vieillissement des Materiaux (EM2VM) (France); Clouet, E. [Service de Recherches de Metallurgie Physique, CEA/Saclay, 91191 Gif-sur-Yvette (France); Domain, C. [EDF, Recherche et Developpement, Materiaux et Mecanique des Composants, Les Renardieres, F77250 Moret sur Loing (France); Laboratoire commun EDF-CNRS Etude et Modelisation des Microstructures pour le Vieillissement des Materiaux (EM2VM) (France)

    2011-10-15

    Energy barriers for carbon migration in the neighborhood of line defects in body-centered cubic iron have been obtained by atomistic simulations. For this purpose, molecular statics with an Fe-C interatomic potential, based on the embedded atom method, has been employed. Results of these simulations have been compared to the predictions of anisotropic elasticity theory. The agreement is better for a carbon atom sitting on an octahedral site (energy minimum) than one on a tetrahedral site (saddle point). Absolute differences in the energy barriers obtained by the two methods are usually below 5 meV at distances larger than 1.5 nm from a screw dislocation and 2 nm (up to 4 nm in the glide plane) from the edge dislocation. Atomistic kinetic Monte Carlo simulations performed at T = 300 K and additional analysis based on the activation energies obtained by both methods show that they are in good qualitative agreement, despite some important quantitative discrepancies due to the large absolute errors found near the dislocation cores.

  12. Vortex with fourfold defect lines in a simple model of self-propelled particles

    Science.gov (United States)

    Seyed-Allaei, Hamid; Ejtehadi, Mohammad Reza

    2016-03-01

    We study the formation of a vortex with fourfold symmetry in a minimal model of self-propelled particles, confined inside a squared box, using computer simulations and also theoretical analysis. In addition to the vortex pattern, we observe five other regimes in the system: a homogeneous gaseous phase, band structures, moving clumps, moving clusters, and vibrating rings. All six regimes emerge from controlling the strength of noise and from the contribution of repulsion and alignment interactions. We study the shape of the vortex and its symmetry in detail. The pattern shows exponential defect lines where incoming and outgoing flows of particles collide. We show that alignment and repulsion interactions between particles are necessary to form such patterns. We derive hydrodynamical equations with an introduction of the "small deviation" technique to describe the vortex phase. The method is applicable to other systems as well. Finally, we compare the theory with the results of both computer simulations and an experiment using Quincke rotors. A good agreement between the three is observed.

  13. Electronic relaxations of radiative defects of the anion sublattice in cesium bromide crystals and exoemission of electrons

    CERN Document Server

    Galyij, P V

    2002-01-01

    The paper presents the results of investigations of thermostimulated exoelectron emission (TSEE) from CsBr crystal, excited by moderate doses (D <= 10 sup 4 Gy) of ultraviolet (h nu <= 7 eV) that selectively creates anion excitons and radiative defects in the anion sublattice. Having used the previously established connection between thermoactivated processes such as thermostimulated exoemission, electroconductivity, and luminescence in the irradiated crystal lattice, the concentrations of exoemission-active centers (EAC) and kinetics parameters of TSEE are calculated. The EAC concentration calculated on a base of the bulk, thermoactivated-recombinational, and band-gap Auger-like exoemission mechanisms, are in satisfactory agreement with the concentration of electron color centers in the irradiated crystals.

  14. Engineering cell lines for production of replication defective HSV-1 gene therapy vectors.

    Science.gov (United States)

    Grant, Kyle G; Krisky, David M; Ataai, Mohammed M; Glorioso, Joseph C

    2009-03-01

    Herpes simplex virus type 1 (HSV-1) represents an attractive vehicle for a variety of gene therapy applications. To render this virus safe for clinical use, its cytotoxic genes must be removed without losing its ability to express transgenes efficiently. Our vectors are deleted for the essential immediate early genes ICP4 and ICP27. These genes are controlled by unique promoters having enhancer elements responsive to a viral structural protein VP16. The expression of these genes occurs prior to the activation of all other lytic functions and is thus required to initiate and complete the virus replication cycle. For large scale manufacture of clinical grade vectors, efficient cell lines must be generated that express the essential viral gene products in trans during vector propagation. Here we describe methods for engineering HSV-1 production cell lines that improve vector growth by altering the kinetics of complementing gene expression. We examined the ability of Vero cells independently transduced with ICP4 and ICP27 under transcriptional control of their respective promoters to support the growth of a replication defective vector (JDTOZHE), deleted for ICP4, ICP27 and approximately 20 kb of internal elements that are not required for virus growth in Vero cells. Vector yield on this cell line was 3 logs lower than wild-type virus grown on Vero cells. To understand the mechanism underlying poor vector yield, we examined the expression of ICP4 and ICP27 during virus complementation. While ICP27 was expressed immediately on vector infection, the expression of ICP4 was considerably delayed by 8-10 h, suggesting that the ICP4 promoter was not adequately activated by VP16 delivered by the infectious vector particle. Use of the ICP0 promoter to express ICP4 from the cellular genome resulted in higher induction levels and faster kinetics of ICP4 expression and a 10-fold improvement in vector yield. This study suggests that vector complementation is highly dependent on the

  15. In-line E-beam metrology and defect inspection: industry reflections, hybrid E-beam opportunities, recommendations and predictions

    Science.gov (United States)

    Solecky, Eric; Rasafar, Allen; Cantone, Jason; Bunday, Benjamin; Vaid, Alok; Patterson, Oliver; Stamper, Andrew; Wu, Kevin; Buengener, Ralf; Weng, Weihao; Dai, Xintuo

    2017-03-01

    At SPIE 2013 in Metrology, Inspection, and Process Control for Microlithography an invited paper was published titled "In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection". Three years have passed and numerous developments have occurred as predicted in this paper. The development of E-beam tools that can concurrently handle metrology and defect applications is one of the primary developments. In this paper, the capabilities of these new E-beam tools and their current use cases will be discussed in the areas of Critical Dimension Uniformity (CDU), In-die overlay, Hot spot and Physical defect inspection. Emphasis will be placed on use cases where "massive" CDU data is collected in order to increase yield learning for manufacturing (14nm) and decrease cycles of learning for development (7nm). Additionally, some of the other subject material from the previous publication will also be discussed such as the current state of E-beam critical dimension image fidelity and physical defect detection capabilities. Lastly, future directions and opportunities for In-line E-beam including Multi-beam and/or Multi-column E-beam will be discussed.

  16. Tuning the defect mode in ternary photonic crystal with external voltage for designing a controllable optical filter

    Science.gov (United States)

    Jamshidi-Ghaleh, Kazem; Rashidi, Shiva; Vahedi, Ali

    2015-09-01

    In this work, behavior of defect mode in one-dimensional ternary photonic crystal (1DTPC) structure with arrangement of (MgF2/Ag/TiO2)5LiNbO3(TiO2/Ag/MgF2)5 was investigated under the applied external electric dc voltage. The defect layer is lithium niobate (LiNbO3), an electro-optical (EO) material whose refractive index is voltage-dependent with high EO coefficient. In comparison, magnesium fluoride (MgF2) and titanium dioxide (TiO2) layers have very low EO coefficients. A narrow localized defect mode with perfect transmittance was appeared inside the photonic band gap. Under applying the positive or negative biases, red shift and blue shift was observed in the defect mode, respectively. More than 120 nm tunability was obtained under externally applied voltage in the range of -200 V to 200 V. The physical interpretation is very simple. Change in optical path-length displaces the localized wavelength of the defect mode due to Bragg interface condition. The externally tunable localized mode can be employed in designing a controllable optical filter, one of the essential devices for new-generation all-optical integrated circuits.

  17. Crystallization, recrystallization, and melting lines in syndiotactic polypropylene crystallized from quiescent melt and semicrystalline state due to stress-induced localized melting and recrystallization.

    Science.gov (United States)

    Lu, Ying; Wang, Yaotao; Fu, Lianlian; Jiang, Zhiyong; Men, Yongfeng

    2014-11-13

    Crystalline lamellar thickness in syndiotactic polypropylene (sPP) during crystallization from either isothermal molten or stretching induced localized melt states and during subsequent heating was investigated by means of temperature dependent small-angle X-ray scattering techniques. Well-defined crystallization lines where the reciprocal lamellar thickness is linearly dependent on crystallization temperature were observed. Unlike in the case of polybutene-1 where stretching crystallization line was shifted to direction of much smaller lamellar thickness (Macromolecules 2013, 46, 7874), the stretching induced crystallization line for sPP deviates from its corresponding isothermal crystallization line only slightly. Such phenomenon could be attributed to the fact that both crystallization processes from quiescent melt and stress induced localized melt are mediated in a mesomorphic phase in sPP. Subsequent heating of sPP after crystallization revealed the same melting behavior in both systems for the two kinds of crystallites obtained from either quiescent melt or stretching induced localized melt. Both of them underwent melting and recrystallization when the lamellar thickness was smaller than a critical value and melting directly without changing in thickness when the lamellar thickness was larger than the critical value. The melting behavior in sPP systems can be understood by considering the chain relaxation ability within crystalline phase and also can be used as evidence that the crystallization from molten state and stress-induced crystallization passed through the intermediate phase before forming crystallites.

  18. Laser-induced defect insertion in DNA-linked 2D colloidal crystal array

    Science.gov (United States)

    Geiss, Erik; Kim, Sejong; Marcus, Harris L.; Papadimitrakopoulos, Fotios

    2009-02-01

    Insertion of vacancies at predetermined sites within the lattice of colloidal crystals is a prerequisite in order to realize high-quality, opaline-based photonic devices. In this contribution, we demonstrate a novel methodology to afford controlled insertion of vacancies within two-dimensional (2D) opaline arrays. These 2D opaline arrays have been substrate-anchored with the help of DNA hybridization. This provides a heat-sensitive ‘adhesive’ between substrate and microspheres within a surrounding aqueous medium that enables tuning the hybridization strength of DNA linker as well as a mechanism to facilitate the removal of unbound microspheres. Focusing a laser beam onto the substrate/microsphere interface induces a localized heating event that detaches the irradiated microspheres, leaving behind vacancies. By repeating this process, line vacancies were successfully obtained. The effects of salt concentration, laser power, light-absorbing dyes, DNA length and refractive-index mismatch were investigated and found to correlate with heat-induced microsphere release.

  19. Topological Structure of Disclination Lines in 2—Dimensional Liquid Crystals

    Institute of Scientific and Technical Information of China (English)

    张慧; 杨国宏; 等

    2002-01-01

    Using φ-mapping method and topological current theory,the topological structure of disclination lines in 2-dimensional liquid crystals is studied.By introducing the strength density and the topological current of many disclination lines,it is pointed out that the disclination lines are determined by the singulaities of the director field,and topologically quantized by the Hopf indices and Brouwer degrees,Due to the equivalence in physics of the director fields n(x) and -n(x),the Hopf indices can be integers or half-integers,representing a generalization of our previous studies of integer Hopf indices.

  20. Solitons and defects in nematic liquid crystals under a simple shear flow and in a static external magnetic field

    Institute of Scientific and Technical Information of China (English)

    Luo Kai-Fu; Jiang Xiu-Li; Yang Yu-Liang

    2008-01-01

    Under a simple shear flow and in a static external magnetic field, the production of defects in the director-aligning regime of nematic liquid crystals has been investigated in terms of the Leslie-Ericksen theory. The equation of motion of the nematic director, which conforms to the driven over-damped sine-Gordon equation, has a soliton solution of the amplitude π. We show that the stationary state with the director uniformly oriented at a Leslie angle is only a metastable state and the potential, which governs the motion of the director, has a number of stable stationary states. For a strong magnetic field, the higher energy barrier between the stable and unstable states leads the director to be locked along the magnetic field direction. However, at the appropriate shear rate and magnetic field the defects, which appear as a stable solitary solution, can be nucleated from a uniformly aligned nematic liquid crystal. We have calculated the stationary travelling velocity of the solitary waves and the distance between a pair of defects.

  1. BDA: A novel method for identifying defects in body-centered cubic crystals.

    Science.gov (United States)

    Möller, Johannes J; Bitzek, Erik

    2016-01-01

    The accurate and fast identification of crystallographic defects plays a key role for the analysis of atomistic simulation output data. For face-centered cubic (fcc) metals, most existing structure analysis tools allow for the direct distinction of common defects, such as stacking faults or certain low-index surfaces. For body-centered cubic (bcc) metals, on the other hand, a robust way to identify such defects is currently not easily available. We therefore introduce a new method for analyzing atomistic configurations of bcc metals, the BCC Defect Analysis (BDA). It uses existing structure analysis algorithms and combines their results to uniquely distinguish between typical defects in bcc metals. In essence, the BDA method offers the following features:•Identification of typical defect structures in bcc metals.•Reduction of erroneously identified defects by iterative comparison to the defects in the atom's neighborhood.•Availability as ready-to-use Python script for the widespread visualization tool OVITO [http://ovito.org].

  2. Effect of charged line defects on conductivity in graphene: Numerical Kubo and analytical Boltzmann approaches

    DEFF Research Database (Denmark)

    Radchenko, T. M.; Shylau, A. A.; Zozoulenko, I. V.

    2013-01-01

    Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically vapor-deposited graphene, are described by a self-consistent Thomas-Fermi potential. A n...

  3. Effect of deep native defects on ultrasound propagation in TlInS2 layered crystal

    Science.gov (United States)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Odrinsky, Andrei P.; Kırbaş, Cafer

    2016-09-01

    We have investigated p-type semiconductor-ferroelectric TlInS2 by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77-350 K for the detection of native deep defect levels in TlInS2. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS2 was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS2 was shown.

  4. Investigation of Line Width Narrowing and Spectral Jumps of Single Stable Defect Centers in ZnO at Cryogenic Temperature.

    Science.gov (United States)

    Neitzke, Oliver; Morfa, Anthony; Wolters, Janik; Schell, Andreas W; Kewes, Günter; Benson, Oliver

    2015-05-13

    Finding new solid state defect centers in novel host materials is crucial for realizing integrated hybrid quantum photonic devices. We present a preparation method for defect centers with photostable bright single photon emission in zinc oxide, a material with promising properties in terms of processability, availability, and applications. A detailed optical study reveals a complex dynamic of intensity fluctuations at room temperature. Measurements at cryogenic temperatures show very sharp (<60 GHz) zero phonon lines (ZPLs) at 580 nm to  620 nm (≈ 2.0 eV) with frozen out fast fluctuations. Remaining discrete jumps of the ZPL, which depend on the excitation power, are observed. The low temperature results will narrow down speculations on the origin of visible-near-infrared (NIR) wavelength defect emission in zinc oxide and provide a basis for improved theoretical models.

  5. High I on/I off current ratio graphene field effect transistor: the role of line defect.

    Science.gov (United States)

    Tajarrod, Mohammad Hadi; Saghai, Hassan Rasooli

    2015-01-01

    The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.

  6. On-line digital holographic measurement of size and shape of microparticles for crystallization processes

    Science.gov (United States)

    Khanam, Taslima; Darakis, Emmanouil; Rajendran, Arvind; Kariwala, Vinay; Asundi, Anand K.; Naughton, Thomas J.

    2008-09-01

    Crystallization is a widely used chemical process that finds applications in pharmaceutical industries. In an industrial crystallization process, it is not only important to produce pure crystals but also to control the shape and size of the crystals, as they affect the efficiency of downstream processes and the dissolution property of the drug. The effectiveness of control algorithms depend on the availability of on-line, real-time information about these critical properties. In this paper, we investigate the use of lens-less in-line digital holographic microscopy for size and shape measurements for crystallization processes. For this purpose, we use non-crystalline spherical microparticles and carbon fibers with known sizes present in a liquid suspension as test systems. We propose an algorithm to extract size and shape information for a population of microparticles from the experimentally recorded digital holograms. The measurements obtained from the proposed method show good agreement with the corresponding known size and shape of the particles.

  7. Positron annihilation study of vacancy-type defects in Al single crystal foils with the tweed structures across the surface

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, Pavel, E-mail: kpv@ispms.tsc.ru [National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation); Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); Cizek, Jacub, E-mail: jcizek@mbox.troja.mff.cuni.cz; Hruska, Petr [Charles University in Prague, Praha, CZ-18000 Czech Republic (Czech Republic); Anwad, Wolfgang [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, D-01314 Germany (Germany); Bordulev, Yuri; Lider, Andrei; Laptev, Roman [National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation); Mironov, Yuri [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)

    2015-10-27

    The vacancy-type defects in the aluminum single crystal foils after a series of the cyclic tensions were studied using positron annihilation. Two components were identified in the positron lifetime spectra associated with the annihilation of free positrons and positrons trapped by dislocations. With increasing number of cycles the dislocation density firstly increases and reaches a maximum value at N = 10 000 cycles but then it gradually decreases and at N = 70 000 cycles falls down to the level typical for the virgin samples. The direct evidence on the formation of a two-phase system “defective near-surface layer/base Al crystal” in aluminum foils at cyclic tension was obtained using a positron beam with the variable energy.

  8. Enhancement of chemical sensing capability in a photonic crystal fiber with a hollow high index ring defect at the center.

    Science.gov (United States)

    Park, Jiyoung; Lee, Sejin; Kim, Soan; Oh, Kyunghwan

    2011-01-31

    A new type of index-guided photonic crystal fiber is proposed to enhance chemical sensing capability by introducing a hollow high index ring defect that consists of the central air hole surrounded by a high index GeO2 doped SiO2 glass ring. Optical properties of the fundamental guided mode were numerically analyzed using the full-vector finite element method varying the design parameters of both the defects in the center and the hexagonal air-silica lattice in the cladding. Enhanced evanescent wave interaction in the holey region and lower confinement loss by an order of magnitude were achieved simultaneously, which shows a high potential in hyper sensitive fiber-optic chemical sensing applications.

  9. Crystal structure and short range oxygen defects in La- and Nd-modified ZrO[sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Loong, C.K. (Argonne National Laboratory, Argonne, IL 60439 (United States)); Richardson, J.W. Jr. (Argonne National Laboratory, Argonne, IL 60439 (United States)); Ozawa, Masakuni (Nagoya Institute of Technology, Tajimi, Gifu, 507 (Japan)); Kimura, Mareo (Toyota Central Research and Development Laboratories, Inc. Nagakute, Aichi, 480-11 (Japan))

    1994-06-01

    The crystal structure of rare earth modified zirconia and the associated oxygen defects were studied by neutron diffraction. A Rietveld analysis of the neutron powder patterns of heat-treated samples of La- and Nd-10 mol% ZrO[sub 2] revealed the composition of a major tetragonal phase (space group P4[sub 2]/nmc) and a minor cubic phase (space group Fm3m). The short-range oxygen defects structure was examined by a Fourier filtering technique. A real-space correlation function, obtained from a Fourier transform of the filtered residual diffuse scattering, showed evidence of static, oxygen vacancy-induced atomic displacements along the left angle 1 1 1 right angle and other directions of the pseudocubic cell. ((orig.))

  10. Crystal structure and short-range oxygen defects in La- and Nd-modified ZrO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Loong, C.K.; Richardson, J.W. Jr. [Argonne National Lab., IL (United States); Ozawa, M. [Nagoya Inst. of Tech. (Japan); Kimura, M. [Toyota Central Research and Development Labs., Inc., Nagoya (Japan)

    1993-09-01

    The crystal structure of rare-earth modified zirconia and the associated oxygen defects were studied by neutron diffraction. A Rietveld analysis of the neutron powder patterns of heat treated samples of La- and Nd- 10mol%-ZrO{sub 2} revealed the composition of a major tetragonal phase (space group P4{sub 2}/nmc) and a minor cubic phase (space group Fm3m). The sort-range oxygen defects structure was examined by a Fourier-filtering technique. A real-space correlation function, obtained from a Fourier transform of the filtered residual diffuse scattering, showed evidence of static, oxygen-vacancy induced atomic displacements along the <111> and other directions of the pseudocubic cell.

  11. Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells.

    Science.gov (United States)

    Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

    2012-04-01

    Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation.

  12. Pinning efficiency of splayed columnar defects in Bi-2212 single crystal: Evidence of a cage pinning effect

    Science.gov (United States)

    Shaidiuk, V. A.; Ruyter, A.; Plessis, D.; Simon, Ch.; Maignan, A.; Wahl, A.; de Brion, S.; Ammor, L.

    2011-05-01

    A three-directional configuration of columnar defects has been induced in a Bi2Sr2CaCu2O8 single crystal by irradiation with heavy ions of high energy. Persistent current densities have been extracted, using the Bean model, from hysteresis loops recorded in the orientation H||c. We have shown that improvements in pinning properties are larger in this three-directional splayed configuration than in the one obtained with columnar defects parallel to the c-axis. This effect exists only for H larger than HΦ, where HΦ is the matching field, and disappears as temperature is increased and vortices become less stiff. This is the first time that such a beneficial effect is reported for a compound of such a high electronic anisotropy.

  13. Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

    Institute of Scientific and Technical Information of China (English)

    SHI Jun; XIAO Sha-li; WANG Hong-jian; TANG Chang-huan; LIU Shen-ye

    2008-01-01

    In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X-ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shenguang-Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1s2p 1p1-1s2 1S0 resonance line(w),the 1s2p 3P2-1s2 1S0 magnetic quadrupole line(x), the 1s2p 3p1 1s2 1S0 intercombination lines(y), the 1s2p 3S1-1s2 1S0 forbidden line(z) in helium-like Ti X XI and the 1s2s2p 2P3/2-1s22s 2S1/2 line(q) in lithium-like Ti X X have been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△λ) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.

  14. States of the Schottky defect in uranium dioxide and other fluorite type crystals: Molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Kovalenko, M.A., E-mail: akm_max@mail.ru; Kupryazhkin, A. Ya, E-mail: a.ya.kupryazhkin@urfu.ru

    2015-10-05

    Highlights: • We derived the degree of vacancy association in Schottky defects from temperature. • At high temperatures cation vacancy forms complexes with anion vacancies. • Point defects model in the presence of complexes was considered. • The presence of anion vacancies around cation vacancy lowers its migration energy. • The formation of nanovoids at high cation vacancy concentrations was shown. - Abstract: Mass transfer processes in fluorite-type systems are determined by the diffusion of cations via vacancies from Schottky defects. To predict diffusion coefficients of cations and other parameters based on it the Lidiard and Matzke approximation of the point defects model, namely the assumption of isolated vacancies, is widely used. States of the Schottky defect were studied with the high-speed molecular dynamics method in a wide temperature range, with six different interaction potentials. Schottky vacancies were dynamically detected during the simulation. It is shown that contrary to the Lidiard and Matzke model, the Schottky cation vacancy is always associated with anion vacancies. The degree of the Schottky defect association depends on the temperature, at high temperatures near the cation vacancy two or more anion vacancies are located. It is shown that the calculated formation energy of Schottky defects in the form of the trivacancy (5.8–7.4) eV for all potentials are close to the experimental value (6–7) eV, in contrast to the formation energy of Schottky defects in the form of isolated vacancies that exceeds 10 eV. Point defects model of the simulated system in the presence of an artificially created Schottky defect was constructed and compared with calculation results. According to our study the point defects model is applicable only at low temperatures less than half of the melting temperature. It is shown that the presence of anion vacancies near the cation vacancy reduces the migration energy of cations. However, for systems with

  15. Design of omnidirectional and multiple channeled filters using one-dimensional photonic crystals containing a defect layer with a negative refractive index.

    Science.gov (United States)

    Xu, Kun-Yuan; Zheng, Xiguang; Li, Cai-Lian; She, Wei-Long

    2005-06-01

    The band structures of one-dimensional photonic crystals containing a defect layer with a negative refractive index are studied, showing that the defect modes possess three types of dispersion: positive, zero, and negative types. Based on these three types of dispersion, practical designs for large incident angle filters without polarization effect and for narrow frequency and sharp angular filters are suggested. Moreover, the splitting of one degenerate defect mode into multiple defect modes is observed in the band gap when the parameters of the defect layer vary. This mode splitting phenomenon can be used to design multiple channeled filters or filters with a rectangular profile. The dispersion multiplicity of the defect modes can be understood by an approximate formula, and the critical condition for the defect mode splitting is also analyzed. Based on these analyses, practical optimization design of omnidirectional filter is also suggested.

  16. A Novel Method for Studying Thermal Motion and Point Defects in Crystals by X-Ray Resonant Diffraction

    Science.gov (United States)

    Dmitrienko, V. E.; Ishida, K.; Kirfel, A.; Kokubun, J.; Ovchinnikova, E. N.

    2003-01-01

    After an introductory survey of the X-ray resonant anisotropy, we present a novel X-ray method to observe thermal-motion-induced (TMI) and point-defect-induced (PDI) distortions of electronic states of atoms. This method uses the idea that, in general, the local atomic environment becomes less symmetric owing to point defects and/or the thermal vibrations of the atoms in a crystal. As a result of this phenomenon, an additional anisotropy of the resonant scattering factors can occur and "forbidden" Bragg reflections can be excited near the absorption edges. Examples of crystals are discussed (Ge, Y3Fe5O12) where TMI and PDI reflections can be found. The tensor structure factors of the both types of reflections are calculated. According to our theory, the TMI reflection structure factors are proportional to the vibration correlations, u∥2 and u⊥2, of neighboring atoms, and it is inferred that u∥2 provides the main contribution to the thermal-motion-induced anisotropy of X-ray resonant scattering. The TMI reflections in Ge were recently observed by Kokubun et al. (Phys. Rev. B64, 073203 (2001)), Kirfel et al. (in press), and Colella et al. (in press) in accordance with our prediction. For the 006 reflection, the intensity increases about 25 times with the temperature increasing from 30 to 735 K. Owing to their resonant character, the PDI reflections allow to separately study both impurity atoms and host atoms of different types. The considered phenomena can provide a very sensitive method for studying point defects because only the atoms that are affected by defects contribute to the PDI reflections.

  17. Optical Absorption of Impurities and Defects in Semiconducting Crystals Electronic Absorption of Deep Centres and Vibrational Spectra

    CERN Document Server

    Pajot, Bernard

    2013-01-01

    This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

  18. Specific features of the spectral properties of a photonic crystal with a nanocomposite defect with allowance for the size effects

    Science.gov (United States)

    Vetrov, S. Ya.; Pankin, P. S.; Timofeev, I. V.

    2015-07-01

    The spectral properties of a one-dimensional photonic crystal (PC) with a structure defect (a layer of isotropic nanocomposite inserted between two multilayer dielectric mirrors) have been investigated. The nanocomposite consists of spherical gold nanoparticles dispersed in a transparent matrix; it is characterized by effective resonant permittivity. The dependence of the transmission and absorption spectra on the size and concentration of nanoparticles is analyzed. It is shown that the transmission spectrum contains, along with the band gap caused by Bragg diffraction of light, an additional nontransmission band due to the nanocomposite absorption near the resonant frequency.

  19. Kinetics of Schottky defect formation and annihilation in single crystal TlBr.

    Science.gov (United States)

    Bishop, Sean R; Tuller, Harry L; Kuhn, Melanie; Ciampi, Guido; Higgins, William; Shah, Kanai S

    2013-07-28

    The kinetics for Schottky defect (Tl and Br vacancy pair) formation and annihilation in ionically conducting TlBr are characterized through a temperature induced conductivity relaxation technique. Near room temperature, defect generation-annihilation was found to take on the order of hours before equilibrium was reached after a step change in temperature, and that mechanical damage imparted on the sample rapidly increases this rate. The rate limiting step to Schottky defect formation-annihilation is identified as being the migration of lower mobility Tl (versus Br), with an estimate for source-sink density derived from calculated diffusion lengths. This study represents one of the first investigations of Schottky defect generation-annihilation kinetics and demonstrates its utility in quantifying detrimental mechanical damage in radiation detector materials.

  20. Simultaneous sensing of light and sound velocities of fluids in a two-dimensional phoXonic crystal with defects

    Energy Technology Data Exchange (ETDEWEB)

    Amoudache, Samira [Institut d' Electronique, de Microélectronique et de Nanotechnologie, Université de Lille 1, 59655 Villeneuve d' Ascq (France); Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri, B.P. 17 RP, 15000 Tizi-Ouzou (Algeria); Pennec, Yan, E-mail: yan.pennec@univ-lille1.fr; Djafari Rouhani, Bahram [Institut d' Electronique, de Microélectronique et de Nanotechnologie, Université de Lille 1, 59655 Villeneuve d' Ascq (France); Khater, Antoine [Institut des Molécules et Matériaux du Mans UMR 6283 CNRS, Université du Maine, 72085 Le Mans (France); Lucklum, Ralf [Institute of Micro and Sensor Systems (IMOS), Otto-von-Guericke-University, Magdeburg (Germany); Tigrine, Rachid [Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri, B.P. 17 RP, 15000 Tizi-Ouzou (Algeria)

    2014-04-07

    We theoretically investigate the potentiality of dual phononic-photonic (the so-called phoxonic) crystals for liquid sensing applications. We study the transmission through a two-dimensional (2D) crystal made of infinite cylindrical holes in a silicon substrate, where one row of holes oriented perpendicular to the propagation direction is filled with a liquid. The infiltrated holes may have a different radius than the regular holes. We show, in the defect structure, the existence of well-defined features (peaks or dips) in the transmission spectra of acoustic and optical waves and estimate their sensitivity to the sound and light velocity of the analyte. Some of the geometrical requirements behave in opposite directions when searching for an efficient sensing of either sound or light velocities. Hence, a compromise in the choice of the parameters may become necessary in making the phoxonic sensor.

  1. Defects in CZT crystals and their relationship to gamma-ray detector performance

    CERN Document Server

    Bürger, A; Chen, H; Ma, X; Ndap, J O; Schieber, M; Schlesinger, T E; Yao, H W; Erickson, J; James, R B

    2000-01-01

    This paper reviews some of the progress obtained in the understanding of defects in detector grade cadmium zinc telluride material (CZT). Several techniques have been utilized to elucidate some of the issues related to compositional uniformity, effects of precipitates, grain boundaries, and surface defects related to mechanical and chemical treatments. In few cases, special mapping capabilities had to be developed to allow correlations with detector performance.

  2. Engineering the electronic structure of zigzag graphene nanoribbons with periodic line defect

    Energy Technology Data Exchange (ETDEWEB)

    Chakravarty, Chandrima; Mandal, Bikash; Sarkar, Pranab, E-mail: pranab.sarkar@visva-bharati.ac.in

    2017-01-30

    By using first principle calculations we have studied the magnetic, electronic and transport properties of zigzag-graphene nanoribbon (zGNR) with a topological line defect (LD) composed of pentagons and heptagons (5-7). We show that one can engineer the magnetic and electronic properties of the edge passivated zGNR with 5-7 LD through the variation of either the width of the zGNR or the position of the LD. Thus, one can have ferromagnetic behaviour in zGNR by introducing 5-7 LD close to one edge of the ribbon. One can tune the zGNR with 5-7 LD from semi-metallic to semi-metallic semiconductor either by increasing the width of the ribbon or by changing the position of the LD. We have also studied the effect of the doping on the degeneracy of the spin states of 4-4-LD-zGNR. The calculation of transport properties of N-doped 4-4-LD-zGNR reveals that it has high spin filtering efficiencies. The tuning of the spin polarization through the formation of 5-7 LD in zGNR holds a promise for its application in spintronic devices. - Highlights: • The magnetic and electronic properties of zGNR with 5-7 LD can be engineered through the variation of the width of zGNR and the position of LD. • Ferromagnetic behaviour in zGNR can be found by introducing 5-7 LD close to one edge of the ribbon. • Semi-metallic to semi-metallic semiconductor transition occurs by increasing the width of the ribbon or by changing the position of the LD. • There is significant effect of the doping on the degeneracy of the spin states of 4-4-LD-zGNR. • The transport properties calculation of N-doped 4-4-LD-zGNR reveals that it has high spin filtering efficiencies.

  3. Topological Aspect and Bifurcation of Disclination Lines in Two—Dimensional Liquid Crystals

    Institute of Scientific and Technical Information of China (English)

    YANGGuo-Hong; ZHANGHui; 等

    2002-01-01

    Using φ-mapping method and topological current theory,the topological structure and bifurcation of disclination lines in two-dimensional liquid crystals are studied.By introducing the strength density and the topological current of many disclination lines,the total disclination strength is topologically quantized by the Hopf indices and Brouwer degrees at the singularities of the director field when the Jacobian determinant of director field does not vanish.When the Jacobian determinant vanishes,the origin,annihilation and bifurcation processes of disclination lines are studied in the neighborhoods of the limit points and bifurcation points,respectively.The branch solutions at the limit point and the different directions of all branch curves at the bifurcation point are calculated with the conservation law of the topological quantum numbers.It is pointed out that a disclination line with a higher strength is unstable and it will evolve to the lower strength state through the bifurcation process.

  4. Topological Aspect and Bifurcation of Disclination Lines in Two-Dimensional Liquid Crystals

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-Hong; ZHANG Hui; DUAN Yi-Shi

    2002-01-01

    Using φ-mapping method and topological current theory, the topological structure and bifurcation ofdisclination lines in two-dimensional liquid crystals are studied. By introducing the strength density and the topologicalcurrent of many disclination lines, the total disclination strength is topologically quantized by the Hopf indices andBrouwer degrees at the singularities of the director field when the Jacobian determinant of director field does not vanish.When the Jacobian determinant vanishes, the origin, annihilation and bifurcation processes of disclination lines arestudied in the neighborhoods of the limit points and bifurcation points, respectively. The branch solutions at the limitpoint and the different directions of all branch curves at the bifurcation point are calculated with the conservation lawof the topological quantum numbers. It is pointed out that a disclination line with a higher strength is unstable and itwill evolve to the lower strength state through the bifurcation process.

  5. Line Tension of Twist-Free Carbon Nanotube Lyotropic Liquid Crystal Microdroplets on Solid Surfaces.

    Science.gov (United States)

    Jamali, Vida; Biggers, Evan G; van der Schoot, Paul; Pasquali, Matteo

    2017-09-12

    Line tension, i.e., the force on a three-phase contact line, has been a subject of extensive research due to its impact on technological applications including nanolithography and nanofluidics. However, there is no consensus on the sign and magnitude of the line tension, mainly because it only affects the shape of small droplets, below the length scale dictated by the ratio of line tension to surface tension σ/τ. This ratio is related to the size of constitutive molecules in the system, which translates to a nanometer for conventional fluids. Here, we show that this ratio is orders of magnitude larger in lyotropic liquid crystal systems comprising micrometer-long colloidal particles. Such systems are known to form spindle-shaped elongated liquid crystal droplets in coexistence with the isotropic phase, with the droplets flattening when in contact with flat solid surfaces. We propose a method to characterize the line tension by fitting measured droplet shape to a macroscopic theoretical model that incorporates interfacial forces and elastic deformation of the nematic phase. By applying this method to hundreds of droplets of carbon nanotubes dissolved in chlorosulfonic acid, we find that σ/τ ∼ -0.84 ± 0.06 μm. This ratio is 2 orders of magnitude larger than what has been reported for conventional fluids, in agreement with theoretical scaling arguments.

  6. In-line microfluidic integration of photonic crystal fibres as a highly sensitive refractometer.

    Science.gov (United States)

    Wu, Chuang; Tse, Ming-Leung Vincent; Liu, Zhengyong; Guan, Bai-Ou; Zhang, A Ping; Lu, Chao; Tam, Hwa-Yaw

    2014-11-07

    Photonic crystal fibres appear to be an ideal platform for the realisation of novel optofluidic devices and sensors due to their waveguide nature and microstructured architecture. In this paper, we present the fabrication and characterisation of an in-line photonic crystal fibre microfluidic refractometer enabled by a C-shaped fibre. The C-shaped fibre spliced in-between the photonic crystal fibre and the single-mode fibre allows simultaneous in-line optical signal delivery and analyte fluid feeding. Through an arc discharge pre-treatment technique, we successfully achieve selective exploitation of only the central two channels of the photonic crystal fibre for microfluidic sensing. After constructing a Sagnac interferometer, a highly sensitive refractometer with a sensitivity of 8699 nm per RIU was achieved experimentally; this agrees very well with the theoretical value of 8675 nm per RIU. As a demonstration for label-free optical sensing application, the refractometer was used to measure the concentration of NaCl solution with a sensitivity of 15.08 nm/(1 wt%) and a detection limit of 2.3 × 10(-3) wt% (23 ppm).

  7. A focussing iron line crystal spectrometer for Spacelab. [cosmic X-ray detection

    Science.gov (United States)

    Catura, R. C.; Culhane, J. L.; Rapley, C. G.; Gabriel, A. H.; Walker, A. B. C., Jr.; Woodgate, B. E.

    1977-01-01

    A crystal spectrometer system is described which employs conical focusing of 12 curved LiF crystal panels to minimize the detector size and reduce the background counting rate. The wavelength range from 1.70 to 1.98 A is covered, including the resonance lines of Fe XXV and Fe XXVI as well as the Fe I K-alpha line and absorption edge. Operation of the spectrometer is discussed, noting that diffracted X-rays are registered in one-dimensional position-sensitive detectors and that the arrival position of a photon in a detector is related to its wavelength due to the fixed curvature of the crystal panels in the dispersion plane. Some characteristics of the multianode position-sensitive detectors are reviewed along with the crystal arrangement and mounting. The instrument sensitivity is evaluated in relation to the strengths of 6.7-keV emission features detected by the Ariel 5 and OSO 8 proportional-counter spectrometers.

  8. Formation Enthalpy Calculation of Oxygen Vacancy Defect in Doped Lithium Niobate Crystals

    Institute of Scientific and Technical Information of China (English)

    QIANG Liang-sheng; LI Yao; TANG Dong-yan; XU Chong-quan; WEI Yong-de

    2004-01-01

    The relationship between temperature and oxygen vacancy concentration is deduced in this paper. Based on the data of thermal weight-loss experiment, the formation enthalpies of congruent and several doped LN crystals have been calculated. It was found that the formation enthalpy of oxygen vacancies can be decreased evidently by doping valence-changeable ions. The experimental results were discussed and a new reduction process of the photorefractive LN crystal at a relatively low temperature was proposed, and the reduced crystals showed a good effect in practical use.

  9. Line Defects in the Small Elastic Constant Limit of a Three-Dimensional Landau-de Gennes Model

    Science.gov (United States)

    Canevari, Giacomo

    2016-09-01

    We consider the Landau-de Gennes variational model for nematic liquid crystals, in three-dimensional domains. More precisely, we study the asymptotic behaviour of minimizers as the elastic constant tends to zero, under the assumption that minimizers are uniformly bounded and their energy blows up as the logarithm of the elastic constant. We show that there exists a closed set S_line of finite length, such that minimizers converge to a locally harmonic map away from S_line . Moreover, S_line restricted to the interior of the domain is a locally finite union of straight line segments. We provide sufficient conditions, depending on the domain and the boundary data, under which our main results apply. We also discuss some examples.

  10. Line Defects in the Small Elastic Constant Limit of a Three-Dimensional Landau-de Gennes Model

    Science.gov (United States)

    Canevari, Giacomo

    2017-02-01

    We consider the Landau-de Gennes variational model for nematic liquid crystals, in three-dimensional domains. More precisely, we study the asymptotic behaviour of minimizers as the elastic constant tends to zero, under the assumption that minimizers are uniformly bounded and their energy blows up as the logarithm of the elastic constant. We show that there exists a closed set {S_line} of finite length, such that minimizers converge to a locally harmonic map away from {S_line}. Moreover, {S_line} restricted to the interior of the domain is a locally finite union of straight line segments. We provide sufficient conditions, depending on the domain and the boundary data, under which our main results apply. We also discuss some examples.

  11. Defect elimination in solid-phase crystallised Si thin films by line-focus diode laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Huang, Jialiang

    2015-02-02

    A high density of intragrain defects in solid-phase crystallised Si thin films results in poor electronic properties and impedes their use for thin-film solar cell or thin-film transistor applications. This paper demonstrates that a high-power line-focus diode laser can eliminate intragrain defects (microtwins and dislocations) in polycrystalline Si films while maintaining the smooth defect-free surface. Improved electronic properties of ultra-thin polycrystalline Si thin films are thus achieved. To alleviate crack formation during diode laser annealing, a rapid-thermal pre-treatment at 800 °C for 60 s is introduced since it effectively relieves the tensile stress in the films and thus generates a more stable precursor material for subsequent laser annealing. The film thickness plays an important role in diode laser annealing. The films thinner than 100 nm show relatively smaller improvement due to the limited absorption of 808 nm laser radiation. - Highlights: • Diode laser annealing can greatly eliminate intragrain defects in SPC poly-Si films. • Electronic qualities are effectively improved by diode laser annealing. • Residual stress in the SPC poly-Si films can be relieved by RTA pre-treatment. • A thin damage-free and smooth poly-Si film is achieved by diode laser annealing.

  12. Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

    Science.gov (United States)

    Markevich, V. P.; Peaker, A. R.; Lastovskii, S. B.; Murin, L. I.; Litvinov, V. V.; Emtsev, V. V.; Dobaczewski, L.

    2009-12-01

    Electrically active defects induced in oxygen-rich Ge:Sb crystals by irradiation with MeV electrons at 80 or 300 K have been studied by means of capacitance transient techniques. Transformations of the defects upon post-irradiation isochronal anneals have also been investigated. It is argued that a radiation-induced electron trap with an energy level at about 110 meV below the conduction band edge (E110) can be associated with electron emission from an energy level of the Ge self-interstitial (IGe). The E110 trap is eliminated in the temperature range 150-200 K upon 15 min isochronal annealing. No other traps in the upper half of the gap emerge simultaneously with the disappearance of the E110 trap. It is argued that Ge self-interstitials become mobile at temperatures higher than 150 K and in oxygen-rich Ge interact with interstitial oxygen atoms (Oi). The resulting IGeOi complexes do not have energy levels in the upper half of the Ge gap. Diffusion and interaction of the IGeOi defects with interstitial oxygen atoms at T>50 °C result in the formation of IGeO2i complexes. In the most stable configuration the IGeO2i complex has orthorhombic (C2v) symmetry.

  13. Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

    Energy Technology Data Exchange (ETDEWEB)

    Markevich, V.P., E-mail: V.Markevich@manchester.ac.u [School of Electrical and Electronic Engineering, University of Manchester, Sackville Str. Building, Manchester, M60 1QD (United Kingdom); Peaker, A.R. [School of Electrical and Electronic Engineering, University of Manchester, Sackville Str. Building, Manchester, M60 1QD (United Kingdom); Lastovskii, S.B.; Murin, L.I. [Scientific-Practical Materials Research Center of NAS of Belarus, Minsk 220072 (Belarus); Litvinov, V.V. [Belarusian State University, Minsk 220050 (Belarus); Emtsev, V.V. [Ioffe Physico-Technical Institute, St. Petersburg 194021 (Russian Federation); Dobaczewski, L. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)

    2009-12-15

    Electrically active defects induced in oxygen-rich Ge:Sb crystals by irradiation with MeV electrons at 80 or 300 K have been studied by means of capacitance transient techniques. Transformations of the defects upon post-irradiation isochronal anneals have also been investigated. It is argued that a radiation-induced electron trap with an energy level at about 110 meV below the conduction band edge (E{sub 110}) can be associated with electron emission from an energy level of the Ge self-interstitial (I{sub Ge}). The E{sub 110} trap is eliminated in the temperature range 150-200 K upon 15 min isochronal annealing. No other traps in the upper half of the gap emerge simultaneously with the disappearance of the E{sub 110} trap. It is argued that Ge self-interstitials become mobile at temperatures higher than 150 K and in oxygen-rich Ge interact with interstitial oxygen atoms (O{sub i}). The resulting I{sub Ge}O{sub i} complexes do not have energy levels in the upper half of the Ge gap. Diffusion and interaction of the I{sub Ge}O{sub i} defects with interstitial oxygen atoms at T>50 deg. C result in the formation of I{sub Ge}O{sub 2i} complexes. In the most stable configuration the I{sub Ge}O{sub 2i} complex has orthorhombic (C{sub 2v}) symmetry.

  14. Effects of crystal defects on stress-corrosion susceptibility in aluminum alloy 7075

    Science.gov (United States)

    Bentle, G. G.; Jacobs, A. J.

    1970-01-01

    Point defects were introduced into specimens of three heat-treated tempers of alloy 7075 by neutron irradiation. Continuous ultrasonic monitoring allowed crack growth to be observed. Effects on stress-corrosion susceptibility, elongation, hardness, and yield strength are noted and compared for the three tempers.

  15. Peculiarities of spectral properties of a one-dimensional photonic crystal with an anisotropic defect layer of the nanocomposite with resonant dispersion

    Energy Technology Data Exchange (ETDEWEB)

    Vetrov, S Ya; Timofeev, I V [L.V.Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Academgorodok, Krasnoyarsk (Russian Federation); Pankin, P S [Siberian Federal University, Krasnoyarsk (Russian Federation)

    2014-09-30

    We have studied the spectral properties of a one-dimensional photonic crystal with a structure defect that represents an anisotropic nanocomposite layer sandwiched between two multilayer dielectric mirrors. The nanocomposite consists of metallic nanoscale inclusions of orientationally ordered spheroidal shape, dispersed in a transparent matrix, and is characterised by an effective resonant permittivity. Each of the two orthogonal polarisations of probe radiation corresponds to a particular plasmon resonant frequency of the nanocomposite. The problem of calculating the transmittance spectrum of the waves with s- and p-polarisations for such structures is solved. Spectral manifestation of splitting of the defect mode depending on the structure parameters and volumetric fraction of the nanospheroids is studied. The essential dependence of the position of maxima of the defect modes in the bandgap of the photonic crystal and their splitting on the incidence angle, polarisation, and the ratio of lengths of the polar and equatorial semi-axes of the spheroidal nanoparticles is shown. (photonic crystals)

  16. Molecular Signatures of Cardiac Defects in Down Syndrome Lymphoblastoid Cell Lines Suggest Altered Ciliome and Hedgehog Pathways

    Science.gov (United States)

    Ripoll, Clémentine; Rivals, Isabelle; Ait Yahya-Graison, Emilie; Dauphinot, Luce; Paly, Evelyne; Mircher, Clothilde; Ravel, Aimé; Grattau, Yann; Bléhaut, Henri; Mégarbane, André; Dembour, Guy; de Fréminville, Bénédicte; Touraine, Renaud; Créau, Nicole; Potier, Marie Claude; Delabar, Jean Maurice

    2012-01-01

    Forty percent of people with Down syndrome exhibit heart defects, most often an atrioventricular septal defect (AVSD) and less frequently a ventricular septal defect (VSD) or atrial septal defect (ASD). Lymphoblastoid cell lines (LCLs) were established from lymphocytes of individuals with trisomy 21, the chromosomal abnormality causing Down syndrome. Gene expression profiles generated from DNA microarrays of LCLs from individuals without heart defects (CHD−; n = 22) were compared with those of LCLs from patients with cardiac malformations (CHD+; n = 21). After quantile normalization, principal component analysis revealed that AVSD carriers could be distinguished from a combined group of ASD or VSD (ASD+VSD) carriers. From 9,758 expressed genes, we identified 889 and 1,016 genes differentially expressed between CHD− and AVSD and CHD− and ASD+VSD, respectively, with only 119 genes in common. A specific chromosomal enrichment was found in each group of affected genes. Among the differentially expressed genes, more than 65% are expressed in human or mouse fetal heart tissues (GEO dataset). Additional LCLs from new groups of AVSD and ASD+VSD patients were analyzed by quantitative PCR; observed expression ratios were similar to microarray results. Analysis of GO categories revealed enrichment of genes from pathways regulating clathrin-mediated endocytosis in patients with AVSD and of genes involved in semaphorin-plexin-driven cardiogenesis and the formation of cytoplasmic microtubules in patients with ASD-VSD. A pathway-oriented search revealed enrichment in the ciliome for both groups and a specific enrichment in Hedgehog and Jak-stat pathways among ASD+VSD patients. These genes or related pathways are therefore potentially involved in normal cardiogenesis as well as in cardiac malformations observed in individuals with trisomy 21. PMID:22912673

  17. Molecular signatures of cardiac defects in Down syndrome lymphoblastoid cell lines suggest altered ciliome and Hedgehog pathways.

    Directory of Open Access Journals (Sweden)

    Clémentine Ripoll

    Full Text Available Forty percent of people with Down syndrome exhibit heart defects, most often an atrioventricular septal defect (AVSD and less frequently a ventricular septal defect (VSD or atrial septal defect (ASD. Lymphoblastoid cell lines (LCLs were established from lymphocytes of individuals with trisomy 21, the chromosomal abnormality causing Down syndrome. Gene expression profiles generated from DNA microarrays of LCLs from individuals without heart defects (CHD(-; n = 22 were compared with those of LCLs from patients with cardiac malformations (CHD(+; n = 21. After quantile normalization, principal component analysis revealed that AVSD carriers could be distinguished from a combined group of ASD or VSD (ASD+VSD carriers. From 9,758 expressed genes, we identified 889 and 1,016 genes differentially expressed between CHD(- and AVSD and CHD(- and ASD+VSD, respectively, with only 119 genes in common. A specific chromosomal enrichment was found in each group of affected genes. Among the differentially expressed genes, more than 65% are expressed in human or mouse fetal heart tissues (GEO dataset. Additional LCLs from new groups of AVSD and ASD+VSD patients were analyzed by quantitative PCR; observed expression ratios were similar to microarray results. Analysis of GO categories revealed enrichment of genes from pathways regulating clathrin-mediated endocytosis in patients with AVSD and of genes involved in semaphorin-plexin-driven cardiogenesis and the formation of cytoplasmic microtubules in patients with ASD-VSD. A pathway-oriented search revealed enrichment in the ciliome for both groups and a specific enrichment in Hedgehog and Jak-stat pathways among ASD+VSD patients. These genes or related pathways are therefore potentially involved in normal cardiogenesis as well as in cardiac malformations observed in individuals with trisomy 21.

  18. On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si

    Science.gov (United States)

    Zangenberg, N. R.; Nylandsted Larsen, A.

    2005-02-01

    Vacancy-related defects in Si are explored with deep level transient spectroscopy (DLTS). The measurements are performed on-line on irradiated p-type Si and a new trap with the signature (Epa, σpa) = (0.18 eV, 6.5×10-15 cm2) only present at cryogenic temperatures is studied. Furthermore, the bi-stable boron-vacancy complex is studied and it’s configuration at low temperatures is investigated and found to have the signature (Epa, σpa) = (0.11 eV, 8.2×10-15 cm2).

  19. Defect modes of one-dimensional photonic-crystal structure with a resonance nanocomposite layer

    Science.gov (United States)

    Moiseev, S. G.; Ostatochnikov, V. A.

    2016-08-01

    We have studied the defect modes of a structure of Fabry - Perot interferometer type, in which the layer separating Bragg mirrors is made of a heterogeneous composite material with metallic nanoscale inclusions. Effective optical characteristics of the nanocomposite material have resonance singularities in the visible region of the spectrum, which are conditioned by the surface plasmon resonance of metallic nanoparticles. It is shown that the spectral profile of the energy bandgap of the photonic structure can be modified by varying the volume fraction and size of nanoparticles. The interrelation of splitting and shift of defect modes with structural parameters of a nanocomposite layer is studied by means of a numerical - graphical method with allowance for the frequency dependences of phases and amplitudes of reflectances in Bragg mirrors.

  20. Hydrodynamics of pair-annihilating disclination lines in nematic liquid crystals.

    Science.gov (United States)

    Svensek, D; Zumer, S

    2002-08-01

    The pair annihilation of straight line defects with strength +/-1/2 in bulk nematic systems is studied numerically, considering a full coupling of orientational degrees of freedom and hydrodynamics. This work is based on the generalization of the Ericksen-Leslie theory to the tensor order parameter as proposed by Qian and Sheng [T. Qian and P. Sheng, Phys. Rev. E 58, 7475 (1998)]. The approach is particularly suited for the late stages of the annihilation process. It is confirmed that the +1/2 disclination line moves considerably faster than the -1/2 one (e.g., twice as fast) due to the hydrodynamic flow. Symmetries of the important stress tensor terms upon inverting the sign of the winding number and performing a homogeneous in-plane rotation of the Q-tensor eigensystem are discussed. The stress tensor terms that dominantly contribute to the advective flow and to the flow asymmetry are identified.

  1. Crystal lattice defects in MBE grown Si layers highly doped with Er

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, N.D.; Werner, P. [Max-Planck Institute of Microstructure Physics, 06120 Halle (Saale), Weinberg 2 (Germany); Vdovin, V.I. [Institute for Chemical Problems of Microelectronics, 119017 Moscow (Russian Federation); Denisov, D.V.; Kyutt, R.N.; Sobolev, N.A. [Ioffe Physico-Technical Institute RAS, 194021 St. Petersburg (Russian Federation)

    2008-02-15

    The structure of Si:Er layers grown by MBE on Si(001) substrates was investigated by transmission electron microscopy. We studied the dependence of the layer structure on the erbium concentration [Er]=(8 x 10{sup 18}-4 x 10{sup 19} cm{sup -3}) as well as the epitaxial growth temperature (400-700 C). In general, ErSi{sub 2} platelets and spherical metallic precipitates are formed during the epitaxial growth through the layer and in the near-interface region, respectively. For [Er]{>=}2 x 10{sup 19} cm{sup -3}, an oscillation of platelet density with periodicity approximately 200-250 nm was observed. A new type of complex structural defect was observed in a specimen with [Er]=4 x 10{sup 19} cm{sup -3}. In the layers grown at 400 C, complexes of extended defects consisting of partial dislocations, stacking faults and twins are generated. The formation of silicides and Er precipitates is accompanied by emission of vacancies, which leads to the formation of pores in the layer. A high concentration of vacancies should also result in formation of V-V and V-Er complexes. The presence of these point-defect complexes can explain the appearance of deep acceptor levels with an activation energy of 360 meV, which can be responsible for nonradiative paths. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Interaction between helium and intrinsic point defects in 3C-SiC single crystal

    Science.gov (United States)

    Sun, Dan; Li, Ruihuan; Ding, Jianhua; Zhang, Pengbo; Wang, Yuanyuan; Zhao, Jijun

    2017-06-01

    Silicon carbide (SiC) is a candidate structural material for fission and fusion reactors as well as an important wide band-gap semiconductor for electronic devices. Using first-principles calculations, we systemically investigate the energetics and stability of helium (He) atoms and intrinsic point defects inside single-crystalline 3C-SiC. We find that the formation energy of interstitial He is lower than those of point defects. Inside 3C-SiC, the He-C interaction is stronger than He-Si. Hence, the interstitial He atom in the Si tetrahedral site has a stronger interaction with the six C atoms in the second nearest neighbor than the four nearest neighboring Si atoms. For interstitial He atoms, the equilibrium He-He distance is about 1.81 Å with a weak attraction of 0.09 eV. According to the binding energies of Hen (n = 2-4) clusters, He interstitials can form He bubbles without involving other types of structural defects. Moreover, a Si (C) monovacancy can accommodate up to 11 (9) He atoms. The Hen clusters trapped in the Si or C monovacancy induce large internal pressure in the order of magnitude of GPa and thus facilitate the creation of a new vacancy at the nearby lattice site.

  3. Path-integral and Ornstein-Zernike study of quantum fluid structures on the crystallization line

    Science.gov (United States)

    Sesé, Luis M.

    2016-03-01

    Liquid neon, liquid para-hydrogen, and the quantum hard-sphere fluid are studied with path integral Monte Carlo simulations and the Ornstein-Zernike pair equation on their respective crystallization lines. The results cover the whole sets of structures in the r-space and the k-space and, for completeness, the internal energies, pressures and isothermal compressibilities. Comparison with experiment is made wherever possible, and the possibilities of establishing k-space criteria for quantum crystallization based on the path-integral centroids are discussed. In this regard, the results show that the centroid structure factor contains two significant parameters related to its main peak features (amplitude and shape) that can be useful to characterize freezing.

  4. Investigation on growth and defects of Ho{sup 3+}:BaY{sub 2}F{sub 8} crystals grown by Czochralski method

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Hui [Department of Materials Science, Sichuan University, 610064 Chengdu (China); Southwest Institute of Technical Physics, Chengdu 610041 (China); Guan, Zhouguo [Southwest Institute of Technical Physics, Chengdu 610041 (China); He, Zhiyu, E-mail: hzyscu@163.com [Department of Materials Science, Sichuan University, 610064 Chengdu (China); Huang, Wei [Department of Materials Science, Sichuan University, 610064 Chengdu (China); Zhang, Wei; Niu, Ruihua; Yao, Chao; Yang, Yongqiang; Zhang, Huirong; Zhang, Zhibin [Southwest Institute of Technical Physics, Chengdu 610041 (China)

    2015-11-05

    Large and heavily Ho{sup 3+}-doped BaY{sub 2}F{sub 8} single crystals were grown by the Czochralski method. X-ray powder diffraction was applied to analyze the phase of the crystal samples. Simultaneously, metallographic microscope, scanning electron microscopy and energy dispersive spectrometer were employed to observe and investigate defects in the as grown crystals. Two significant kinds of defects, namely cracking and impurities were discovered in the samples of Ho{sup 3+}:BaY{sub 2}F{sub 8} single crystals. Theoretical analyses suggested that mechanisms concerning the formation of the impurities such as bubbles and inclusions were considered to be closely related to the growth temperature and atmosphere while the former defect was primarily brought by the lattice distortion relating to the thermal stress and the impurities. Based on the results of experiments and theoretical analyses, the parameters of growth process were optimized and a crack free 20 mol% Ho{sup 3+}:BaY{sub 2}F{sub 8}single crystal has been successfully obtained. Furthermore, the UV–Vis-IR (0.2–10 μm) absorption spectra of BaY{sub 2}F{sub 8} single crystal and the crystal heavily doped with Ho{sup 3+} ions (20 mol%) have been investigated at room temperature. - Highlights: • Main reason of cleavages is the crystal lattice distortion caused by the impurities. • Lattice distortion was caused by carbon phases derived from the graphite crucible. • High quality crystal can be obtained by using CF{sub 4} and high purity graphite crucibles. • The crystal exhibits the broader absorption band and larger absorption cross section.

  5. Identification of defects responsible for optically stimulated luminescence (OSL) from copper-diffused LiAlO{sub 2} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Holston, M.S.; Ferguson, I.P.; Giles, N.C.; McClory, J.W. [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433 (United States); Halliburton, L.E., E-mail: Larry.Halliburton@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506 (United States)

    2015-08-15

    A large optically stimulated luminescence (CW-OSL) response has been observed from bulk lithium aluminate (LiAlO{sub 2}) crystals that have been copper-diffused. After introducing the copper, an optical absorption band peaking at 277 nm is present and is assigned to Cu{sup +} (3d{sup 10}) ions at Li{sup +} sites. Photoluminescence (PL and PLE) from copper-diffused samples shows an emission band near 359 nm and an excitation band near 273 nm. These PL bands are also assigned to the Cu{sup +} ions. After an irradiation at room temperature with x-rays, the copper-diffused crystals give an intense OSL signal when stimulated with light in the 425–500 nm region. The OSL emitted light has a peak near 357 nm and thus is directly associated with recombination at a Cu ion. Electron paramagnetic resonance (EPR) shows that the x-rays produce two distinct Cu{sup 2+} (3d{sup 9}) centers, both at Li{sup +} sites. One of the trapped-hole centers is a Cu{sup 2+} with no nearby defects and the other is a Cu{sup 2+} with a neighboring Li{sup +} vacancy. Monitoring the EPR spectra before and after OSL shows that only the isolated Cu{sup 2+} ions (i.e., those with no nearby defect) participate in the OSL process. The electron traps participating in the OSL are shown with EPR to be transition-metal ions that are unintentionally present. Specifically, Fe{sup 2+} ions replacing Li{sup +} ions, possibly with a nearby lithium vacancy, convert to Fe{sup +} (3d{sup 7}) ions when they trap an electron during irradiation. These electrons are optically released by the OSL exciting light and migrate to the holes trapped as isolated Cu{sup 2+} ions, where electron–hole recombination gives the characteristic Cu{sup +} emission. By combining OSL, PL, and EPR, we establish the general OSL mechanism in copper-diffused LiAlO{sub 2} crystals. - Highlights: • Copper is diffused into LiAlO{sub 2} crystals at high temperature. • Cu{sup +} ions at Li{sup +} sites cause PL at 359 nm and PLE at 273 nm

  6. Flight to Mars and radiation defects in Li{sub 2}B{sub 4}O{sub 7} and KTiOPO{sub 4} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Grachev, V.; Malovichko, G.; Pankratov, V.; Rust, T. [Physics Department, Montana State University, Bozeman, MT 59717 (United States); Burak, Ya. [Institute of Physical Optics, Lviv 79005 (Ukraine)

    2007-03-15

    Solar, space, laser and nuclear reactor radiations lead to the appearance of defects in complex oxides and to inevitable performance degradation of devices based on these materials. Since many radiation defects are paramagnetic ones, the electron paramagnetic resonance, EPR is one of the most suitable method for their study. Results of optical and EPR study of defects in as grown and irradiated Li{sub 2}B{sub 4}O{sub 7} and KTiOPO{sub 4} crystals are presented. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Trapping of defect point to improve response time via controlled azimuthal anchoring in a vertically aligned liquid crystal cell with polymer wall

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Gyun; Kim, Sung Min; Kim, Youn Sik; Lee, Hee Kyu; Lee, Seung Hee [Polymer BIN Fusion Research Center, School of Advanced Materials Engineering, Chonbuk National University, Chonju, Chonbuk 561-756 (Korea, Republic of); Lyu, Jae-Jin; Kim, Kyeong Hyeon [AMLCD Division, Samsung Electronics, Kiheung, Kyunggi-Do 449-711 (Korea, Republic of); Lu, Ruibo; Wu, Shin-Tson [College of Optics and Photonics, University of Central Florida, Orlando FL 32816 (United States)], E-mail: lsh1@chonbuk.ac.kr

    2008-03-07

    Conventional multi-domain vertically aligned liquid crystal (LC) cells have defect points due to the collision of LC directors during the formation of multiple domains. In addition, the location of defects changes with time resulting in a slow response time. This paper proposes a robust vertically aligned LC cell, where the LCs are locked by polymer walls, and the azimuthal anchoring on the surface of the alignment layer is controlled by the polymerization of a UV curable reactive mesogen monomer. As a result, the defect points are trapped at a single position, resulting in a greatly improved response time.

  8. Effect of Disclination Lines on Free Energy of Nematic Liquid Crystals

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-Hong; ZHANG Hui; TIAN Li-Jun; WANG Yu-Sheng; DUAN Yi-Shi

    2005-01-01

    In the light of φ-mapping method and topological current theory, the effect of disclination lines on the free energy density of nematic liquid crystals is studied. It is pointed out that the total Frank free energy density can be divided into two parts. One is the distorted energy density of director field around the disclination lines. The other is the saddle-splay energy density, which is shown to be centralized at the disclination lines and to be topologically quantized in the unit of kπ /2 when the Jacobian determinant of the director field does not vanish at the singularities of the director field. The topological quantum numbers are determined by the Hopf indices and Brouwer degrees of the director field at the disclination lines, i.e., the disclination strengthes. When the Jacobian determinant vanishes, the generation, annihilation, intersection, splitting and merging processes of the saddle-splay energy density are detailed in the neighborhoods of the limit points and bifurcation points, respectively. It is shown that the disclination line with high topological quantum number is unstable and will evolve to the low topological quantum number states through the splitting process.

  9. Multiscale modeling of polycrystalline graphene: A comparison of structure and defect energies of realistic samples from phase field crystal models

    Science.gov (United States)

    Hirvonen, Petri; Ervasti, Mikko M.; Fan, Zheyong; Jalalvand, Morteza; Seymour, Matthew; Vaez Allaei, S. Mehdi; Provatas, Nikolas; Harju, Ari; Elder, Ken R.; Ala-Nissila, Tapio

    2016-07-01

    We extend the phase field crystal (PFC) framework to quantitative modeling of polycrystalline graphene. PFC modeling is a powerful multiscale method for finding the ground state configurations of large realistic samples that can be further used to study their mechanical, thermal, or electronic properties. By fitting to quantum-mechanical density functional theory (DFT) calculations, we show that the PFC approach is able to predict realistic formation energies and defect structures of grain boundaries. We provide an in-depth comparison of the formation energies between PFC, DFT, and molecular dynamics (MD) calculations. The DFT and MD calculations are initialized using atomic configurations extracted from PFC ground states. Finally, we use the PFC approach to explicitly construct large realistic polycrystalline samples and characterize their properties using MD relaxation to demonstrate their quality.

  10. DNA- and AC electric field-assisted assembly of two-dimensional colloidal photonic crystals and their controlled defect insertion

    Science.gov (United States)

    Kim, Sejong

    Photonic crystals (PC) are structures in which the refractive index is a periodic function in space. The ability of photonic crystals to localize and manipulate electromagnetic waves has attracted considerable attention from the scientific community. The self-assembly of monodisperse micrometer scale colloidal spheres into hexagonal closed-packed colloidal crystals provides a simple, fast, and cheap materials chemistry approach to PCs. Employing DNA supramolecular recognition, 2-dimensional (2D) photonic crystal monolayer was fabricated with monodisperse polystyrene colloidal microspheres. Amine-terminated DNA oligomers were covalently attached onto carboxy-decorated microspheres and enabled their DNA-functionalization while preserving their colloidal stability and organization properties. Following a capillary-force-assisted organization of DNA-decorated microspheres into close-packed 2D opaline arrays, the first monolayer was immobilized by DNA hybridization. Insertion of vacancies at predetermined sites within the lattice of colloidal crystals is a prerequisite in order to realize high-quality, opaline-based photonic devices. The previously obtained DNA-hybridization type binding of 2D-opaline arrays provides a heat-sensitive "adhesive" between substrate and microspheres within a surrounding aqueous medium that enables tuning the hybridization strength of DNA linker as well as a mechanism to facilitate the removal of unbound microspheres. Focusing a laser beam onto a single microsphere of the opaline array induces localized heating that enables the microsphere to detach, leaving behind vacancies. By repeating this process, line vacancies were successfully obtained. The effects of salt concentration, laser power, light-absorbing dyes, DNA length and refractive index mismatch were investigated and found to correlate with heat-induced DNA dehybridization. In addition, AC (alternating current) electrokinetic force was also utilized to obtain assembly of colloidal

  11. Nonlinear Localization due to a Double Negative Defect Layer in a One-Dimensional Photonic Crystal Containing Single Negative Material Layers

    Institute of Scientific and Technical Information of China (English)

    Munazza Zulfiqar Ali; Tariq Abdullah

    2008-01-01

    We investigate the effects of introducing a defect layer in a one-dimensional photonic crystal containing single negative material layers on the transmission properties.The width of the defect layer js taken to be the same or smaller than the period of the structure.Different cases of the defect layer being linear or nonlinear and double positive or double negative are discussed.It is found that only a nonlinear double negative layer givas rises to a localized mode within the zero-φeff gap in this kind of structure.It is also shown that the important characteristics of the nonlinear defect mode such as its frequency,its FWHM and the threshold of the associated bistability can be controlled by changing the widths of the defect layer and the host layers.

  12. Computational study of the generation of crystal defects in a bcc metal target irradiated by short laser pulses

    Science.gov (United States)

    Lin, Zhibin; Johnson, Robert A.; Zhigilei, Leonid V.

    2008-06-01

    The generation of crystal defects in a Cr target irradiated by a short, 200 fs, laser pulse is investigated in computer simulations performed with a computational model that combines the classical molecular dynamics method with a continuum description of the laser excitation of conduction band electrons, electron-phonon coupling, and electron heat conduction. Interatomic interactions are described by the embedded atom method (EAM) potential with a parametrization designed for Cr. The potential is tested by comparing the properties of the EAM Cr material with experimental data and predictions of density functional theory calculations. The simulations are performed at laser fluences close to the threshold for surface melting. Fast temperature variation and strong thermoelastic stresses produced by the laser pulse are causing surface melting and epitaxial resolidification, transient appearance of a high density of stacking faults along the {110} planes, and generation of a large number of point defects (vacancies and self-interstitials). The stacking faults appear as a result of internal shifts in the crystal undergoing a rapid uniaxial expansion in the direction normal to the irradiated surface. The stacking faults are unstable and disappear shortly after the laser-induced tensile stress wave leaves the surface region of the target. Thermally activated generation of vacancy-interstitial pairs during the initial temperature spike and quick escape of highly mobile self-interstitials to the melting front or the free surface of the target, along with the formation of vacancies at the solid-liquid interface during the fast resolidification process, result in a high density of vacancies, on the order of 10-3 per lattice site, created in the surface region of the target. The strong supersaturation of vacancies can be related to the incubation effect in multipulse laser ablation/damage and should play an important role in mixing/alloying of multicomponent or composite

  13. Conditionally lethal mutations in chinese hamster cells. Characterization of a cell line with a possible defect in the Krebs cycle.

    Science.gov (United States)

    DeFrancesco, L; Werntz, D; Scheffler, I E

    1975-04-01

    A variant Chinese hamster cell line has been isolated from a mutagenized population that has a markedly reduced ability to oxidize a variety of substrates via the Krebs cycle. The production of 14CO2 from 14C-labeled compounds was measured using pyruvate, acetate, beta-hydroxybutyrate, palmitate and glutamate, and in all cases it was neglibible in the mutant. In contrast to this, significant amounts of 14CO2 were produced from 14C-aspartate and 14C-succinate which suggest that some reactions of the Krebs cycle can take place and this conclusion is supported by tracer experiments with labeled compounds. The rate of respiration measured with a Clark oxygen electrode in the mutant was compared to several normal Chinese hamster cell lines and was found to be only 8%. Mitochondria appear to be present in normal numbers and with only minor differences in morphology. The measurement of difference spectra between oxidized and reduced states permits us to conclude that the cytochromes are all present and functional. These results lead us to believe that there may be a defect in the Krebs cycle between alpha-ketoglutarate and succinate. Alternatively a defect in a structural component of the mitochondria or in the electron-transport chain itself may be causing pleiotropic effects in the Krebs cycle and respiration.

  14. Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

    Science.gov (United States)

    Rousseau, Ian; Sánchez Arribas, Irene; Carlin, Jean-François; Butté, Raphaël.; Grandjean, Nicolas

    2016-04-01

    We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near λ = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity and gain is supplied by a single InGaN/GaN quantum well. Using this platform, we and others previously demonstrated single-μW lasing thresholds due to the high βQ-product inherent to the nanobeam geometry (β is spontaneous emission coupling fraction into desired mode). In this work, we improved the fraction of emission emitted into our microscope's light cone by combining a redesigned photonic crystal cavity (c.f. [3]) with a cross-grating coupler with period approximately twice the photonic crystal lattice constant. The samples were fabricated in epitaxial III-nitride layers grown on (111) silicon substrates using metal organic vapor phase epitaxy. The photonic crystal and output couplers were patterned using a single electron beam lithography exposure and subsequently transferred to the underlying III-nitride layers using dry etching. The nanobeams were then suspended via vapor phase etching of silicon in XeF2. Scanning electron microscopy cross-sections revealed high-aspect ratio (>5), sub-70 nanometer diameter holes with near-vertical sidewalls. Fabrication-induced geometry errors were characterized by processing scanning electron micrographs with custom critical dimension software. Using UV micro-photoluminescence spectroscopy at room temperature, we measured the nanobeams' emission intensity, far-field profile, and quality factor. By comparing more than ten nominally identical nanobeams for each geometry with finite-difference time-domain simulations taking into account the geometrical deviations measured during fabrication, we characterized the role of fabrication-induced imperfections. Finally, we explored the trade-off between the quality factor and collected signal via lithographic variations of the output

  15. Coupling mid-infrared light from a photonic crystal waveguide to metallic transmission lines

    Energy Technology Data Exchange (ETDEWEB)

    Blanco-Redondo, Andrea, E-mail: andrea.blanco@tecnalia.com, E-mail: r.hillenbrand@nanogune.eu [ICT-European Software Institute Division, Tecnalia, Ibaizabal Bidea, Ed. 202, 48170 Zamudio, Bizkaia (Spain); Dpto. Electronica y Telecom., E.T.S. Ingeniería Bilbao, UPV/EHU, Alda. Urquijo, 48103 Bilbao, Bizkaia (Spain); Sarriugarte, Paulo [Nanooptics Group, CIC nanoGUNE Consolider, 20018 Donostia–San Sebastian, Gipuzkoa (Spain); Garcia-Adeva, Angel [Dpto. Fisica Aplicada I, E.T.S. Ingeniería de Bilbao, UPV-EHU, Alda. Urquijo, 48103 Bilbao, Bizkaia (Spain); Zubia, Joseba [Dpto. Electronica y Telecom., E.T.S. Ingeniería Bilbao, UPV/EHU, Alda. Urquijo, 48103 Bilbao, Bizkaia (Spain); Hillenbrand, Rainer, E-mail: andrea.blanco@tecnalia.com, E-mail: r.hillenbrand@nanogune.eu [Nanooptics Group, CIC nanoGUNE Consolider, 20018 Donostia–San Sebastian, Gipuzkoa (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Bizkaia (Spain)

    2014-01-06

    We propose and theoretically study a hybrid structure consisting of a photonic crystal waveguide (PhC-wg) and a two-wire metallic transmission line (TL), engineered for efficient transfer of mid-infrared (mid-IR) light between them. An efficiency of 32% is obtained for the coupling from the transverse magnetic (TM) photonic mode to the symmetric mode of the TL, with a predicted intensity enhancement factor of 53 at the transmission line surface. The strong coupling is explained by the small phase velocity mismatch and sufficient spatial overlapping between the modes. This hybrid structure could find applications in highly integrated mid-IR photonic-plasmonic devices for biological and gas sensing, among others.

  16. ESEEM of industrial quartz powders: insights into crystal chemistry of Al defects

    Science.gov (United States)

    Romanelli, Maurizio; Di Benedetto, Francesco; Bartali, Laura; Innocenti, Massimo; Fornaciai, Gabriele; Montegrossi, Giordano; Pardi, Luca A.; Zoleo, Alfonso; Capacci, Fabio

    2012-06-01

    A set of raw industrial materials, that is, pure quartz and quartz-rich mixtures, were investigated through electron paramagnetic resonance and electron spin echo-envelope modulation spectroscopies, with the aim of evaluating the effective role played by defect centres and of assessing whether they can be used to monitor changes in the physical properties of quartz powders with reference to their health effects. The obtained results point to two interactions of the Al defect centres with H+, hosted in sites within the channels parallel and perpendicular to the c axis of quartz, respectively. These two Al/H+ (hAl) centres exhibit a weak chemical bond, and their relative amounts appear to be modified/controlled by the thermo-mechanical processes underwent by powders. Indeed, a mechanically promoted inter-conversion between the two kinds of site is suggested. As a consequence, the hAl centres are effective in monitoring even modest activations of powders, through thermal or mechanical processes, and they are also supposed to play a specific, relevant role in quartz reactivity during the considered industrial processes.

  17. Interactions between X-ray induced transient defects and pre-existing damage precursors in DKDP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Negres, R A; Saw, C K; Demos, S G

    2008-10-24

    Large-aperture laser systems, currently designed to achieve high energy densities at the target location (exceeding {approx} 10{sup 11} J/m{sup 3}), will enable studies of the physics of matter and radiation under extreme conditions. As a result, their optical components, such as the frequency conversion crystals (KDP/DKDP), may be exposed to X-rays and other ionizing radiation. This in turn may lead to a change in the damage performance of these materials as they may be affected by radiation-induced effects by either forming new damage initiation centers or interacting with the pre-existing damage initiating defects (so-called damage precursors). We present an experimental study on the laser-induced bulk damage performance at 355-nm of DKDP crystals following X-ray irradiation at room temperature. Results indicate that the damage performance of the material is affected by exposure to X-rays. We attribute this behavior to a change in the physical properties of the precursors which, in turn, affect their individual damage threshold.

  18. Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells.

    Science.gov (United States)

    Ng, Annie; Ren, Zhiwei; Shen, Qian; Cheung, Sin Hang; Gokkaya, Huseyin Cem; So, Shu Kong; Djurišić, Aleksandra B; Wan, Yangyang; Wu, Xiaojun; Surya, Charles

    2016-12-07

    Synthesis of high quality perovskite absorber is a key factor in determining the performance of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth technique can provide high level of versatility and repeatability to ensure the optimal conditions for the growth of the perovskite films as well as potential for batch processing. It is found that the growth ambient and degree of crystallization of CH3NH3PbI3 (MAPI) have strong impact on the defect density of MAPI. We demonstrate that HCVD process with slow postdeposition cooling rate can significantly reduce the density of shallow and deep traps in the MAPI due to enhanced material crystallization, while a mixed O2/N2 carrier gas is effective in passivating both shallow and deep traps. By careful control of the perovskite growth process, a champion device with power conversion efficiency of 17.6% is achieved. Our work complements the existing theoretical studies on different types of trap states in MAPI and fills the gap on the theoretical analysis of the interaction between deep levels and oxygen. The experimental results are consistent with the theoretical predictions.

  19. Lung Cancer Cell Line Screen Links Fanconi Anemia/BRCA Pathway Defects to Increased Relative Biological Effectiveness of Proton Radiation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi; Ghosh, Priyanjali; Magpayo, Nicole [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Testa, Mauro; Tang, Shikui [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Gheorghiu, Liliana [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Biggs, Peter; Paganetti, Harald [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Efstathiou, Jason A. [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Lu, Hsiao-Ming [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Held, Kathryn D. [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Willers, Henning, E-mail: hwillers@mgh.harvard.edu [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States)

    2015-04-01

    Purpose: Growing knowledge of genomic heterogeneity in cancer, especially when it results in altered DNA damage responses, requires re-examination of the generic relative biological effectiveness (RBE) of 1.1 of protons. Methods and Materials: For determination of cellular radiosensitivity, we irradiated 17 lung cancer cell lines at the mid-spread-out Bragg peak of a clinical proton beam (linear energy transfer, 2.5 keV/μm). For comparison, 250-kVp X rays and {sup 137}Cs γ-rays were used. To estimate the RBE of protons relative to {sup 60}Co (Co60eq), we assigned an RBE(Co60Eq) of 1.1 to X rays to correct the physical dose measured. Standard DNA repair foci assays were used to monitor damage responses. FANCD2 was depleted using RNA interference. Results: Five lung cancer cell lines (29.4%) exhibited reduced clonogenic survival after proton irradiation compared with X-irradiation with the same physical doses. This was confirmed in a 3-dimensional sphere assay. Corresponding proton RBE(Co60Eq) estimates were statistically significantly different from 1.1 (P≤.05): 1.31 to 1.77 (for a survival fraction of 0.5). In 3 of these lines, increased RBE was correlated with alterations in the Fanconi anemia (FA)/BRCA pathway of DNA repair. In Calu-6 cells, the data pointed toward an FA pathway defect, leading to a previously unreported persistence of proton-induced RAD51 foci. The FA/BRCA-defective cells displayed a 25% increase in the size of subnuclear 53BP1 foci 18 hours after proton irradiation. Conclusions: Our cell line screen has revealed variations in proton RBE that are partly due to FA/BRCA pathway defects, suggesting that the use of a generic RBE for cancers should be revisited. We propose that functional biomarkers, such as size of residual 53BP1 foci, may be used to identify cancers with increased sensitivity to proton radiation.

  20. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  1. Thermal, defects, mechanical and spectral properties of Nd-doped GdNbO4 laser crystal

    Science.gov (United States)

    Ding, Shoujun; Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Wang, Xiaofei; Sun, Guihua; Li, Xiuli; Sun, Dunlu

    2017-05-01

    A Nd-doped GdNbO4 crystal was grown successfully by Czochralski method. Its monoclinic structure was determined by X-ray diffraction; the unit-cell parameters are a = 5.38 Å, b = 11.09 Å, c = 5.11 Å, and β = 94.56°. The morphological defects of Nd:GdNbO4 crystal were investigated using the chemical etching with the phosphoric acid etchant. For a new crystal, the physical properties are of great importance. The hardness and density of Nd:GdNbO4 were investigated first. Thermal properties of Nd:GdNbO4, including thermal expansion coefficient and specific heat, were measured along a-, b-, and c-crystalline axes. Thermal properties indicate that the Nd:GdNbO4 pumped along c-axis can reduce the thermal lensing effect effectively. The specific heat is 0.53 J g-1 K-1 at 300 K, indicating a relatively high damage threshold of Nd:GdNbO4. The transmission and emission spectrum of Nd:GdNbO4 were measured, and the absorption peaks were assigned. The strongest emission peak of Nd:GdNbO4 is located at 1065.3 nm in the spectral range of 850-1420 nm excited by 808 nm laser. The refractive index of Nd:GdNbO4 was calculated with the transmission spectrum and fitted with Sellmeier equation. All these obtained results is of great significance for the further research of Nd:GdNbO4.

  2. Host and defect-related photoluminescence of structurally disordered K3WO3F3 oxyfluoride crystals

    Science.gov (United States)

    Kozlov, A. V.; Pustovarov, V. A.

    2017-05-01

    Spectra of photoluminescence (PL) in the region of 1.5-5.5 eV, PL excitation spectra (3-22 eV), PL decay kinetics and PL temperature dependence were measured for single crystals and ceramics K3WO3F3 as well as for ceramics K3WO3F3 irradiated by fast electrons. Synchrotron radiation was used for low temperature PL experiments with time resolution. Single crystals are transparent in microwave, visible and near UV range, inter-band transition energy is Eg = 4.3 eV. In K3WO3F3, the wide band luminescence in the region of 2.5 eV with the Stokes shift of 1.5 eV with the microsecond decay kinetics is connected with luminescence of triplet self-trapped excitons (STE). This luminescence is formed by electronic transitions in [WO3F3] octahedron. Different distortion of KWOF crystal lattice is manifested in the change of the Stokes shift of the STE luminescence band. The 3.2 eV emission band in low-temperature PL spectrum with decay times of 1.8 ns and 11 ns corresponds to singlet STE luminescence. A new 2.9 eV emission band is discovered in low-temperature PL spectrum in the samples irradiated by fast electrons (E = 10 MeV, D = 160 kGy). This emission band is excited not through the intracenter mechanism but through the creation of excitons bound on the defects. It is suggested that it is F-like centers of anionic sublattice induced by the mechanism of elastic collision.

  3. Investigation of air entrapment and weld line defects in micro injection moulded thermoplastic elastomer micro rings

    DEFF Research Database (Denmark)

    Hasnaes, F.B.; Tosello, Guido; Calaon, Matteo;

    2015-01-01

    The micro injection moulding (μIM) process for the production of micro rings in thermoplastic elastomers (TPE) was investigated and optimized. The objective was to minimize the formation of air entrapments and the depth of micro weld line created on the surface of the TPE micro moulded rings...

  4. Study of the temperature evolution of defect agglomerates in neutron irradiated molybdenum single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lambri, O.A. [Instituto de Fisica Rosario. Member of the CONICET' s Research Staff, Avda. Pellegrini 250, (2000) Rosario, Santa Fe (Argentina); Facultad de Ciencias Exactas, Ingenieria y Agrimensura, Universidad Nacional de Rosario, Laboratorio de Materiales, Escuela de Ingenieria Electrica, Avda. Pellegrini 250, (2000) Rosario, Santa Fe (Argentina)], E-mail: olambri@fceia.unr.edu.ar; Zelada-Lambri, G.I. [Facultad de Ciencias Exactas, Ingenieria y Agrimensura, Universidad Nacional de Rosario, Laboratorio de Materiales, Escuela de Ingenieria Electrica, Avda. Pellegrini 250, (2000) Rosario, Santa Fe (Argentina); Cuello, G.J. [Institut Laue Langevin, 6, rue Jules Horowitz, BP 156, 38042 Grenoble (France); Departamento de Fisica Aplicada II, Facultad de Ciencias y Tecnologia, Universidad del Pais Vasco, Apdo. 644, 48080 Bilbao, Pais Vasco (Spain); Bozzano, P.B. [Laboratorio de Microscopia Electronica. Unidad de Actividad Materiales, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Avda. Gral. Paz 1499, (1650) San Martin (Argentina); Garcia, J.A. [Departamento de Fisica Aplicada II, Facultad de Ciencias y Tecnologia, Universidad del Pais Vasco, Apdo. 644, 48080 Bilbao, Pais Vasco (Spain)

    2009-04-15

    Small angle neutron scattering as a function of temperature, differential thermal analysis, electrical resistivity and transmission electron microscopy studies have been performed in low rate neutron irradiated single crystalline molybdenum, at room temperature, for checking the evolution of the defects agglomerates in the temperature interval between room temperature and 1200 K. The onset of vacancies mobility was found to happen in temperatures within the stage III of recovery. At around 550 K, the agglomerates of vacancies achieve the largest size, as determined from the Guinier approximation for spherical particles. In addition, the decrease of the vacancy concentration together with the dissolution of the agglomerates at temperatures higher than around 920 K was observed, which produce the release of internal stresses in the structure.

  5. A defect density-based constitutive crystal plasticity framework for modeling the plastic deformation of Fe-Cr-Al cladding alloys subsequent to irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Patra, Anirban [Los Alamos National Laboratory; Wen, Wei [Los Alamos National Laboratory; Martinez Saez, Enrique [Los Alamos National Laboratory; Tome, Carlos [Los Alamos National Laboratory

    2016-02-05

    It is essential to understand the deformation behavior of these Fe-Cr-Al alloys, in order to be able to develop models for predicting their mechanical response under varied loading conditions. Interaction of dislocations with the radiation-induced defects governs the crystallographic deformation mechanisms. A crystal plasticity framework is employed to model these mechanisms in Fe-Cr-Al alloys. This work builds on a previously developed defect density-based crystal plasticity model for bcc metals and alloys, with necessary modifications made to account for the defect substructure observed in Fe-Cr-Al alloys. The model is implemented in a Visco-Plastic Self Consistent (VPSC) framework, to predict the mechanical behavior under quasi-static loading.

  6. Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se{sub 2} thin films for solar cells - a review

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Kirchartz, Thomas [Forschungszentrum Juelich, Institut fuer Energie- und Klimaforschung (IEK-5), Photovoltaik, 52428, Juelich (Germany); Simsek Sanli, Ekin; Aken, Peter A. van [Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart (Germany); Ramasse, Quentin M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury, WA4 4AD (United Kingdom); Kleebe, Hans-Joachim [Technische Universitaet Darmstadt, Institut fuer Angewandte Geowissenschaften, Schnittspahnstrasse 9, 64287, Darmstadt (Germany); Azulay, Doron; Balberg, Isaac; Millo, Oded [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Cojocaru-Miredin, Oana [RWTH Aachen, Physikalisches Institut IA, Sommerfeldstr. 14, 52074, Aachen (Germany); Barragan-Yani, Daniel; Albe, Karsten [Technische Universitaet Darmstadt, FG Materialmodellierung, Jovanka-Bontschits-Str. 2, 64287, Darmstadt (Germany); Haarstrich, Jakob; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany)

    2016-05-15

    The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se){sub 2} thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se){sub 2} thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Three-dimensional positioning and control of colloidal objects utilizing engineered liquid crystalline defect networks.

    Science.gov (United States)

    Yoshida, H; Asakura, K; Fukuda, J; Ozaki, M

    2015-05-21

    Topological defects in liquid crystals not only affect the optical and rheological properties of the host, but can also act as scaffolds in which to trap nano or micro-sized colloidal objects. The creation of complex defect shapes, however, often involves confining the liquid crystals in curved geometries or adds complex-shaped colloidal objects, which are unsuitable for device applications. Using topologically patterned substrates, here we demonstrate the controlled generation of three-dimensional defect lines with non-trivial shapes and even chirality, in a flat slab of nematic liquid crystal. By using the defect lines as templates and the electric response of the liquid crystals, colloidal superstructures are constructed, which can be reversibly reconfigured at a voltage as low as 1.3 V. Three-dimensional engineering of the defect shapes in liquid crystals is potentially useful in the fabrication of self-healing composites and in stabilizing artificial frustrated phases.

  8. Design, fabrication and testing of elliptical crystal bender for the EXAFS beam-line at INDUS-II synchrotron source

    Indian Academy of Sciences (India)

    N C Das; S N Jha; D Bhattacharyya; A K Poswal; A K Sinha; V K Mishra

    2004-10-01

    An extended X-ray absorption fine structure (EXAFS) beam-line for X-ray absorption studies using energy dispersive geometry and position sensitive detector is being developed for the INDUS-II synchrotron source. The optical design of the beam-line has been completed based on the working principle that a single crystal bent in the shape of an ellipse by a crystal bender would act as a dispersing as well as focusing element. The heart of the beam-line is the crystal bender which has been designed on the basis of the principle of four-point bending and has been fabricated indigenously. The crystal bender is capable of producing pre-defined elliptical curvature on a crystal surface by applying different couples at the two-ends of the crystal which has variable width along its length. The focusing property of the crystal bender has been tested using a laser source and has been compared with the theoretically simulated results.

  9. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lopez L, M.; Perez C, A.; Luyo A, J.; Melendez L, M.; Tamura, M. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del instituto politecnico Nacional, A.P. 14-740, 07000 Mexico D.F. (Mexico); Mendez G, V.H.; Vidal, M.A. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi (Mexico)

    2000-07-01

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of Al{sub x}Ga{sub 1-x} As and In{sub x}Ga{sub 1-x} As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  10. The relationship between crystal growth and defect structure: a study of potassium hydrogen phthalate using x-ray topography and atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ester, G.R.; Price, R.; Halfpenny, P.J. [Department of Materials Science and Engineering, University of Bath, Bath (United Kingdom)

    1999-05-21

    An investigation of the defect structure of crystals of potassium hydrogen phthalate (KAP) and its relationship to the crystallization behaviour has been carried out using x-ray diffraction topography and atomic force microscopy (AFM). Crystals of KAP grown from aqueous solution were found to exhibit very low defect densities in the range 5 to 15 cm{sup -2} and remarkably low levels of strain. The character and distribution of the dominant growth dislocation types were determined using x-ray topography. The most significant features of the dislocation structure were a tendency for certain dislocation types to nucleate in pairs and at growth sector boundaries. X-ray topography revealed sectorial variations in solvent inclusions and the complementary use of AFM has shown the relationship of this to growth spiral anisotropy on the (010) face of KAP crystals. Changes in KAP crystal morphology have been observed which result from extreme variations in dislocation density, leading to either spiral growth or, in the case of dislocation-free growth sectors, a two-dimensional nucleation mechanism. The bending of dislocations from one growth sector to another and the tendency of dislocations in this material to nucleate in pairs are discussed in the context of size-dependent crystal growth rates. (author)

  11. The relationship between crystal growth and defect structure: a study of potassium hydrogen phthalate using x-ray topography and atomic force microscopy

    Science.gov (United States)

    Ester, G. R.; Price, R.; Halfpenny, P. J.

    1999-05-01

    An investigation of the defect structure of crystals of potassium hydrogen phthalate (KAP) and its relationship to the crystallization behaviour has been carried out using x-ray diffraction topography and atomic force microscopy (AFM). Crystals of KAP grown from aqueous solution were found to exhibit very low defect densities in the range 5 to 15 cm-2 and remarkably low levels of strain. The character and distribution of the dominant growth dislocation types were determined using x-ray topography. The most significant features of the dislocation structure were a tendency for certain dislocation types to nucleate in pairs and at growth sector boundaries. X-ray topography revealed sectorial variations in solvent inclusions and the complementary use of AFM has shown the relationship of this to growth spiral anisotropy on the (010) face of KAP crystals. Changes in KAP crystal morphology have been observed which result from extreme variations in dislocation density, leading to either spiral growth or, in the case of dislocation-free growth sectors, a two-dimensional nucleation mechanism. The bending of dislocations from one growth sector to another and the tendency of dislocations in this material to nucleate in pairs are discussed in the context of size-dependent crystal growth rates.

  12. Defect characterization of Ga$_4$Se$_3$S layered single crystals by thermoluminescence

    Indian Academy of Sciences (India)

    Isik M; Delice S; Gasanly N

    2016-04-01

    Trapping centres in undoped Ga$_4$Se$_3$S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low temperature range of 15−300 K. After illuminating the sample with blue light (∼470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s.The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K/s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K.

  13. On-line structural integrity monitoring and defect diagnosis of steam generators using analysis of guided acoustic waves

    Science.gov (United States)

    Lu, Baofu

    2005-11-01

    Integrity monitoring and flaw diagnostics of flat beams and tubular structures was investigated in this research using guided acoustic signals. The primary objective was to study the feasibility of using imbedded sensors for monitoring steam generator and heat exchanger tubing. A piezo-sensor suite was deployed to activate and collect Lamb wave signals that propagate along metallic specimens. The dispersion curves of Lamb waves along plate and tubular structures were generated through numerical analysis. Several advanced techniques were explored to extract representative features from acoustic time series. Among them, the Hilbert-Huang transform (HHT) is a recently developed technique for the analysis of non-linear and transient signals. A moving window method was introduced to generate the local peak characters from acoustic time series, and a zooming window technique was developed to localize the structural flaws. The dissertation presents the background of the analysis of acoustic signals acquired from piezo-electric transducers for structural defect monitoring. A comparison of the use of time-frequency techniques, including the Hilbert-Huang transform, is presented. It also presents the theoretical study of Lamb wave propagation in flat beams and tubular structures, and the need for mode separation in order to effectively perform defect diagnosis. The results of an extensive experimental study of detection, location, and isolation of structural defects in flat aluminum beams and brass tubes are presented. The time-frequency analysis and pattern recognition techniques were combined for classifying structural defects in brass tubes. Several types of flaws in brass tubes were tested, both in the air and in water. The techniques also proved to be effective under background/process noise. A detailed theoretical analysis of Lamb wave propagation was performed and simulations were carried out using the finite element software system ABAQUS. This analytical study

  14. Paramagnetic and diamagnetic defects in e{sup -} and UV-irradiated TeO{sub 2} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Watterich, A.; Kappers, L.A. E-mail: kappers@uconnvm.uconn.edu; Gilliam, O.R.; Bartram, R.H.; Foeldvari, I.; Korecz, L

    2002-05-01

    A study is reported of the influence of illumination on generation and decay of point defects in TeO{sub 2} crystals following electron irradiation at {approx}400 K. Electron irradiation is believed to cause a large concentration of diamagnetic oxygen vacancies denoted by V{sub O}{sup x} and a smaller concentration of vacancies with one trapped electron denoted by V{sub O}{sup {center_dot}}. When the sample is UV illuminated at 330 nm and 77 K or lower, electron spin resonance (ESR) measurements show that the number of V{sub O}{sup {center_dot}} centers increases and a comparable gain of V{sub O}{sup '} centers (three electrons in the vacancy) occurs. A brief illumination at 660 nm causes the V{sub O}{sup '} signal to disappear and the V{sub O}{sup {center_dot}} signal to decrease and return to its original value. Changes in the crystal's optical absorption obtained from spectra measured with polarized light are given. When V{sub O}{sup '} centers are removed by bleaching, or by thermal annealing, broad bands at 600 and 700 nm disappear and there are increases in optical absorption at 380, 440 and 480 nm. The source of these bands is discussed. These processes are reversed by a new UV illumination at 330 nm and 77 K. The growth and decay kinetics of V{sub O}{sup '} centers and V{sub O}{sup {center_dot}} centers measured by ESR indicate the same rates of percentage change in their concentrations. Explanation of these reversible processes supports selected models for the three different vacancy centers.

  15. Dirac points and line degeneracies in two-dimensional nonsymmorphic photonic crystals

    CERN Document Server

    Lin, Jun Yu; Chen, You Jian; Lee, Ching Hua; Zhang, Xiao

    2016-01-01

    Topological phase transitions, which have fascinated generations of physicists, are always demarcated by gap closures. In this work, we study the topological properties of gap closure points, i.e. band degeneracies, in photonic crystal lattices exhibiting nonsymmorphic group symmetries. Despite their relatively esoteric symmetries, such lattice structures are relatively easy to fabricate, and thus experimentally study, in photonic systems. We show that the combination of glide symmetry and time reversal symmetry can protect point degeneracies. Line degeneracies along two high symmetry momenta are, however, only protected by one glide symmetry. By defining a topological winding number for point degeneracies, Dirac points with windings of $\\pm 1,\\ -1,\\ -2$ are found in lattices with $pmg$, $pgg$ and $p4g$ nonsymmorphic group symmetries respectively. More interestingly, the breaking of time reversal symmetry in systems with symmetry groups $pgg$ and $p4g$ yield Chern insulators with nontrivial edge states as sol...

  16. Generation of Anti-Stokes Line in Fundamental Mode of Photonic Crystal Fibre

    Institute of Scientific and Technical Information of China (English)

    WANG Wei; HOU Lan-Tian; LIU Zhao-Lun; ZHOU Gui-Yao

    2008-01-01

    A photonic crystal fibre (PCF) with zero-dispersion wavelength around 800 nm is designed and fabricated. Simulated results show that the zero-dispersion wavelength of fundamental mode for this PCF is at 826 nm, and phase-matched four-wave mixing can be achieved in fundamental mode. Using 20Ofs Ti:sapphire laser with central wavelength at 810nm as pump, the anti-Stokes line around 610nm is generated efficiently. The output signal has a Gaussian-like profile, which indicates that the anti-Stokes signal is in the fundamental mode of the PCF. The energy of anti-Stokes signal is higher than that of residual pump laser and the maximum ratio of the anti-Stokes signal to the pump component in the output spectrum is estimated to be 1.2.

  17. Photonic crystal fiber in-line Mach-Zehnder interferometer for explosive detection.

    Science.gov (United States)

    Tao, Chuanyi; Wei, Heming; Feng, Wenlin

    2016-02-08

    We report a photonic crystal fiber (PCF) in-line Mach-Zehnder interferometer used as a gas sensor device which exhibits high sensitivity to the explosive trinitrotoluene (TNT). The interferometric sensor head is formed by embedding a segment of large-mode-area/grapefruit PCF between standard single-mode fibers via butt coupling, which produces two small air gaps in between terminated fiber ends with ceramic ferrule connectors as coupling regions, which also serve as inlet/outlet for the gas. The spectral response of the interferometer is investigated in terms of its wavelength spectrum. The selectivity to TNT vapor is achieved by immobilizing a molecular recognition ployallylamine layer on the inner surface of the holey region of the PCF. The TNT-induced variations of the interference fringes are measured and the sensing capability of the proposed sensor is demonstrated experimentally.

  18. A new on-line luminometer and beam conditions monitor using single crystal diamond sensors

    CERN Document Server

    CMS Collaboration

    2015-01-01

    Instrumentation near the beam-pipe requires extremely radiation hard sensors. Inside CMS two rings instrumented with 12 single crystal diamond sensors each are installed on both sides of the interaction point. The sensors are subdivided in two pads, and each pad is read out by a dedicated fast radiation hard ASIC in 130 nm CMOS technology. Due to the excellent time resolution collision products will be separated from machine induced background. In the backend a dead-time less histogramming unit is used, and a fast microTCA system with GHz sampling rate is under development. The detector will measure both the on-line luminosity and the background bunch-by-bunch. The performance of a prototype detector in a test-beam will be reported, and results from the operation during data taking will be presented.

  19. A new on-line luminometer and beam conditions monitor using single crystal diamond sensors

    CERN Document Server

    Karacheban, Olena

    2015-01-01

    Instrumentation near the beam-pipe requires extremely radiation hardsensors. Inside CMS two rings instrumented with 12 single crystal diamondsensors each are installed on both sides of the interaction point. Thesensors are subdivided in two pads, and each pad is read out by adedicated fast radiation hard ASIC in 130 nm CMOS technology.Due to the excellent time resolution collision products will be separatedfrom machine induced background. In the backend a dead-time lesshistogramming unit is udsed, and a fast microTCA system with GHz samplingrate is under development.The detector will measure both the on-line luminosity and the backgroundbunch-by-bunch.The performance of a prototype detector in a test-beam will be reported,and results from the operation during data taking will be presented.

  20. Line nodes, Dirac points, and Lifshitz transition in two-dimensional nonsymmorphic photonic crystals

    Science.gov (United States)

    Lin, Jun Yu; Hu, Nai Chao; Chen, You Jian; Lee, Ching Hua; Zhang, Xiao

    2017-08-01

    Topological phase transitions, which have fascinated generations of physicists, are always demarcated by gap closures. In this work, we propose very simple two-dimensional photonic crystal lattices with gap closures, i.e., band degeneracies protected by nonsymmorphic symmetry. Our photonic structures are relatively easy to fabricate, consisting of two inequivalent dielectric cylinders per unit cell. Along high-symmetry directions, they exhibit line degeneracies protected by glide-reflection symmetry and time-reversal symmetry, which we explicitly demonstrate for p g ,p m g ,p g g , and p 4 g nonsymmorphic groups. They also exhibit point degeneracies (Dirac points) protected by a Z2 topological number associated only with crystalline symmetry. Strikingly, the robust protection of p g symmetry allows a Lifshitz transition to a type-II Dirac cone across a wide range of experimentally accessible parameters, thus providing a convenient route for realizing anomalous refraction. Further potential applications include a stoplight device based on electrically induced strain that dynamically switches the lattice symmetry from p g g to the higher p 4 g symmetry. This controls the coalescence of Dirac points and hence the group velocity within the crystal.

  1. Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt

    Science.gov (United States)

    Vanhellemont, Jan; Kamiyama, Eiji; Nakamura, Kozo; Śpiewak, Piotr; Sueoka, Koji

    2017-09-01

    This paper reviews recent considerable progress made in the last few years in understanding the behavior and properties of intrinsic point defects close to moving melt/solid Si interfaces during single crystal Si growth from a melt. The so called Voronkov criterion allows to determine whether the grown Si crystal is interstitial I- or vacancy V-rich. This criterion is written as the ratio Γ of the pulling rate v over the thermal gradient G at the interface. Crystals pulled with Γ above a critical value Γcrit are vacancy-rich while below Γcrit, they are interstitial-rich. Various expressions based on the intrinsic point defect thermal equilibrium concentration and diffusivity have been proposed to calculate Γcrit and are briefly discussed in this paper. Recently it was shown that the thermal stress at the interface and heavy doping with neutral and/or electrically active impurities, have a considerable impact on the intrinsic point defect balance and thus also on Γcrit. Furthermore, high energy barriers of formation energies of I and V around three or four atom layers from (001) free surface support a model in which the boundary conditions of the point defect concentrations at the surface in simulations can be set at fixed values. The situation is quite different for Ge single crystal pulling where the vacancy is always the dominant intrinsic point defect so that the Voronkov criterion cannot be applied. Prediction of vacancy cluster concentration/size distributions as a function of the pulling conditions is however still possible. The possibility of reaching Voronkov criterion conditions for Ge by doping with specific impurities is also discussed. Finally, impacts of stress and doping on self-diffusion in Si and Ge are evaluated with comparing the previous experimental results.

  2. Modulation Effect on Transmission Characteristics of Symmetry Photonic Crystals with Liquid Crystal Defect%液晶缺陷对对称结构光子晶体透射特性的调制作用

    Institute of Scientific and Technical Information of China (English)

    蒙成举; 戚朝伟; 杨德贵

    2015-01-01

    The transmission characteristics of 1D symmetrical photonic crystal with nematic liquid crystal ( LC) defect is studied by using temperature characteristics of the thermo optic effect of LC and transfer matrix method.The results show that without LC defect in the photonic crystal, the one defect mode with a transmission rate of 100%appears in the relatively wide forbidden band range; while LC defect is introduced in the photonic crystal, the transmission rate of band edge drops sharply and the two defect modes ( the transmission rate is 100%) appear in the band gap at same time.The position of LC defect mode moves to short wavelength with the increased temperature of LC, and it moves to longer wavelength by increasing the thickness of LC, but there is no change to the vacancy defect mode as the temperature or thickness of LC increases.These modulation effects of LC materials on transmission spectrum of photonic crystal can provide positive guidance for the design of tunable photonic crystal optical devices.%利用液晶热光效应的温度特性,并通过传输矩阵法理论,研究了液晶缺陷一维光子晶体的光传输特性。结果表明,当无液晶缺陷时,在较宽的禁带范围出现一条缺陷模,当在光子晶体中引入液晶缺陷时,禁带边缘通带的透射率大幅下降,同时禁带中增加了一条液晶缺陷模,形成双缺陷模特征,且透射率均为100%;随着液晶材料温度的增大,液晶缺陷模的位置向短波方向移动,而随着液晶层厚度的变化其位置向长波方向移动,但右边空位缺陷模的位置并未受到液晶温度和厚度的影响。液晶材料对光子晶体透射谱的这种调制作用,为设计可调谐光子晶体光学器件提供指导意义。

  3. Directed assembly of nanoparticles monitored by liquid crystal topological defects for advanced optical properties of the composites (Conference Presentation)

    Science.gov (United States)

    Lacaze, Emmanuelle

    2016-09-01

    Directed assembly of nanoparticles is a promising alternative for original nanoparticle organizations. New kinds of optical properties are expected when semi-conductive or metallic nanoparticles are concerned. Using liquid crystal matrices oriented by their interfaces, it is possible to induce anisotropic nanoparticle organizations. We can then investigate the influence of these matrices on the optical properties of the nanoparticles. I will show how to create hierarchical arrays of oriented topological defects in thin smectic films that act as efficient traps for a specific localization and orientation of nanoparticles [1]. I will show how specific nanoparticle assemblies can be obtained, depending on the nanoparticle size and shape. Fluorescent nanorods trapped in smectic dislocations become strictly oriented along a single direction, providing, a fine control of the polarization of the emmitted single photons [2]. Similarly the orientation of gold nanorods leads to the control of their luminescence as well as of their plasmon resonance by light polarization. I will show that, when the nanoparticle concentration is increased, single chains are formed, and can lead to a strong anisotropic electromagnetic coupling between the particles [3]. We are not only capable of linearly confining the particles, but also of varying the inter-particle interactions and thus modifing their optical properties which are sensitive to the inter-particle distance [4]. [1] D. Coursault, Soft Matter 12 (2016) 629. [2] L. Pelliser et al, Adv. Funct. Mat. 25 (2015) 1719. [3] D. Coursault et al., Adv. Mat. 24 (2012) 1461. [4] D. Coursault et al., ACSNano 9 (2015) 11678.

  4. Crystal Defects and Cation Redistribution Study on Nanocrystalline Cobalt-Ferri-Chromites by Positron Annihilation Spectroscopy

    Directory of Open Access Journals (Sweden)

    Kunal B. Modi

    2013-01-01

    Full Text Available Positron lifetime and Doppler broadening measurements were carried out on nanocrystalline (grain size ~60–65 nm samples of the Cr3+-substituted cobalt ferrite system with general chemical formula CoCrxFe2−xO4 (x=0.0−2.0 synthesized by the coprecipitation technique. The results indicated selective trapping of positrons in large vacancy clusters initially at the tetrahedral (A- sites and then with Cr3+-substitution up to concentration (x=0.7, at the octahedral (B- sites. The results are consistent with the cation distribution determined from X-ray diffraction line intensity calculations, which indicated partial inversion of the inverse spinel ferrite, subsequent stabilization over a range of substitution (x=0.7 to 1.7, and finally the full inversion to the normal spinel chromite (CoCr2O4, x=2.0. In the intermediate range of substitution, lattice contraction prevented a fraction of Co2+ ions released from the (B- sites from entering the tetrahedral sites, and these vacancies at the (A- sites trapped positrons. Although the samples were composed of nanocrystalline grains, only an insignificant fraction of positrons were diffused and annihilated at the grain surfaces, since the grain sizes and the thermal diffusion length of positrons nearly overlapped.

  5. Fluorescence-tagged transgenic lines reveal genetic defects in pollen growth--application to the eIF3 complex.

    Directory of Open Access Journals (Sweden)

    Bijoyita Roy

    Full Text Available BACKGROUND: Mutations in several subunits of eukaryotic translation initiation factor 3 (eIF3 cause male transmission defects in Arabidopsis thaliana. To identify the stage of pollen development at which eIF3 becomes essential it is desirable to examine viable pollen and distinguish mutant from wild type. To accomplish this we have developed a broadly applicable method to track mutant alleles that are not already tagged by a visible marker gene through the male lineage of Arabidopsis. METHODOLOGY/PRINCIPAL FINDINGS: Fluorescence tagged lines (FTLs harbor a transgenic fluorescent protein gene (XFP expressed by the pollen-specific LAT52 promoter at a defined chromosomal position. In the existing collection of FTLs there are enough XFP marker genes to track nearly every nuclear gene by virtue of its genetic linkage to a transgenic marker gene. Using FTLs in a quartet mutant, which yields mature pollen tetrads, we determined that the pollen transmission defect of the eif3h-1 allele is due to a combination of reduced pollen germination and reduced pollen tube elongation. We also detected reduced pollen germination for eif3e. However, neither eif3h nor eif3e, unlike other known gametophytic mutations, measurably disrupted the early stages of pollen maturation. CONCLUSION/SIGNIFICANCE: eIF3h and eIF3e both become essential during pollen germination, a stage of vigorous translation of newly transcribed mRNAs. These data delimit the end of the developmental window during which paternal rescue is still possible. Moreover, the FTL collection of mapped fluorescent protein transgenes represents an attractive resource for elucidating the pollen development phenotypes of any fine-mapped mutation in Arabidopsis.

  6. Hybrid graphene-BC2N monolayers and nanoribbons with extended line defects: An ab initio study

    Science.gov (United States)

    Guerra, T.; Azevedo, S.; Machado, M.

    2017-02-01

    Opening a bandgap in graphene is probably one of the most important and urgent topics in the graphene research currently, since most of the proposed applications for graphene in nanoelectronic devices require the ability to adjust its bandgap. In this work we perform first-principles calculations to investigate the alterations at the structural, energetic, electronic and magnetic properties of hybrid graphene-BC2N monolayers (GBMLs) and zigzag graphene-BC2N nanoribbons (ZGBNRs) with different types of extended line defects (ELDs) at the grain boundary. Different reconstruction processes are observed forming different types of ELDs depending on the nature of the atoms into the grain boundary as well as the structures type, arrangement, position/size of domains, and inserted atoms. The inclusion of these ELDs creates edge type effects in the ELD at GBNMLs, inducing spin polarization and localization of states at the Fermi level. GBNMLs show a wide range of electronic structures going from semimetallic to semiconducting and metallic, which can have magnetic ground states with ferromagnetic and antiferromagnetic. ZGBNRs are always metallic with ferromagnetic coupling between carbon atoms at the structures edges.

  7. Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

    Science.gov (United States)

    Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

    2017-09-01

    To reduce the number of crystal defects in a p+Si diffusion layer by a low-thermal-budget annealing process, we have examined crystal recovery in the amorphous layer formed by the cryogenic implantation of germanium and boron combined with sub-melt laser spike annealing (LSA). The cryogenic implantation at -150 °C is very effective in suppressing vacancy clustering, which is advantageous for rapid crystal recovery during annealing. The crystallinity after LSA is shown to be very high and comparable to that after rapid thermal annealing (RTA) owing to the cryogenic implantation, although LSA is a low-thermal-budget annealing process that can suppress boron diffusion effectively. It is also shown that in the p+Si diffusion layer, there is high contact resistance due to the incomplete formation of a metal silicide contact, which originates from insufficient outdiffusion of surface contaminants such as fluorine. To widely utilize the marked reduction in the number of crystal defects, sufficient removal of surface contaminants will be required in the low-thermal-budget process.

  8. Automatic on-line detection system design research on internal defects of metal materials based on optical fiber F-P sensing technology

    Science.gov (United States)

    Xia, Liu; Shan, Ning; Chao, Ban; Caoshan, Wang

    2016-10-01

    Metal materials have been used in aerospace and other industrial fields widely because of its excellent characteristics, so its internal defects detection is very important. Ultrasound technology is used widely in the fields of nondestructive detection because of its excellent characteristic. But the conventional detection instrument for ultrasound, which has shortcomings such as low intelligent level and long development cycles, limits its development. In this paper, the theory of ultrasound detection is analyzed. A computational method of the defects distributional position is given. The non-contact type optical fiber F-P interference cavity structure is designed and the length of origin cavity is given. The real-time on-line ultrasound detecting experiment devices for internal defects of metal materials is established based on the optical fiber F-P sensing system. The virtual instrument of automation ultrasound detection internal defects is developed based on LabVIEW software and the experimental study is carried out. The results show that this system can be used in internal defect real-time on-line locating of engineering structures effectively. This system has higher measurement precision. Relative error is 6.7%. It can be met the requirement of engineering practice. The system is characterized by simple operation, easy realization. The software has a friendly interface, good expansibility, and high intelligent level.

  9. Local structure distortion and spin Hamiltonian parameters for Cr3+-VZn tetragonal defect centre in Cr3+ doped KZnF3 crystal

    Institute of Scientific and Technical Information of China (English)

    Yang Zi-Yuan

    2011-01-01

    The quantitative relationship between the spin Hamiltonian parameters (D,g1l,Og) and the crystal structure parameters for the Cr3+-VZ,,tetragonal defect centre in a Cr3+:KZnF3 crystal is established by using the superposition model. On the above basis,the local structure distortion and the spin Hamiltonian parameter for the Cr3+-VZn tetragonal defect centre in the KZnF3 crystal are systematically investigated using the complete diagonalization method.It is found that the Vzn vacancy and the differences in mass,radius and charge between the Cr3+ and the Zn2+ ions induce the local lattice distortion of the Cr3+ centre ions in the KZnF3 crystal. The local lattice distortion is shown to give rise to the tetragonal crystal field,which in turn results in the tetragonal zero-field splitting parameter D and the anisotropic g factor △g. We find that the ligand F-ion along [001]and the other five F-ions move towards the central Cr3+ by distances of △l=0.0121 nm and △2=0.0026 nm,respectively. Our approach takes into account the spin-orbit interaction as well as the spin-spin,spin-other-orbit,and orbit-orbit interactions omitted in the previous studies. It is found that for the Cr3+ ions in the Cr3+:KZnF3 crystal,although the spin-orbit mechanism is the most important one,the contribution to the spin Hamiltonian parameters from the other three mechanisms,including spin-spin,spin-other-orbit,and orbit-orbit magnetic interactions,is appreciable and should not be omitted,especially for the zero-field splitting (ZFS) parameter D.

  10. EPR identification of defects responsible for thermoluminescence in Cu-doped lithium tetraborate (Li{sub 2}B{sub 4}O{sub 7}) crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brant, A.T., E-mail: Adam.Brant.ctr@afit.edu [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433 (United States); Buchanan, D.A.; McClory, J.W. [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433 (United States); Dowben, P.A. [Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States); Adamiv, V.T.; Burak, Ya.V. [Institute of Physical Optics, 23 Dragomanov St., Lviv 79005 (Ukraine); Halliburton, L.E. [Department of Physics, West Virginia University, Morgantown, WV 26505 (United States)

    2013-07-15

    Electron paramagnetic resonance (EPR) is used to identify the electron and hole traps responsible for thermoluminescence (TL) peaks occurring near 100 and 200 °C in copper-doped lithium tetraborate (Li{sub 2}B{sub 4}O{sub 7}) crystals. As-grown crystals have Cu{sup +} and Cu{sup 2+} ions substituting for lithium and have Cu{sup +} ions at interstitial sites. All of the substitutional Cu{sup 2+} ions in the as-grown crystals have an adjacent lithium vacancy and give rise to a distinct EPR spectrum. Exposure to ionizing radiation at room temperature produces a second and different Cu{sup 2+} EPR spectrum when a hole is trapped by substitutional Cu{sup +} ions that have no nearby defects. These two Cu{sup 2+} trapped-hole centers are referred to as Cu{sup 2+}-V{sub Li} and Cu{sub active}{sup 2+}, respectively. Also during the irradiation, two trapped-electron centers in the form of interstitial Cu{sup 0} atoms are produced when interstitial Cu{sup +} ions trap electrons. They are observed with EPR and are labeled Cu{sub A}{sup 0} and Cu{sub B}{sup 0}. When an irradiated crystal is warmed from 25 to 150 °C, the Cu{sub active}{sup 2+} centers have a partial decay step that correlates with the TL peak near 100 °C. The concentrations of Cu{sub A}{sup 0} and Cu{sub B}{sup 0} centers, however, increase as the crystal is heated through this range. As the crystal is further warmed between 150 and 250 °C, the EPR signals from the Cu{sub active}{sup 2+} hole centers and Cu{sub A}{sup 0} and Cu{sub B}{sup 0} electron centers decay simultaneously. This decay step correlates with the intense TL peak near 200 °C. -- Highlights: ► We use EPR to identify a Cu{sup 2+} center and two Cu{sup 0} defects in Cu-doped Li{sub 2}B{sub 4}O{sub 7}. ► These defects form when our crystal is irradiated with X-rays at room temperature. ► We also observe two above-room-temperature thermoluminescence (TL) peaks. ► A pulsed anneal experiment correlates the decay of the EPR signals to two

  11. Growth, structure, defects and polarized absorption spectral properties of Er:Yb:YCa{sub 4}O(BO{sub 3}){sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Degao, E-mail: qduzhdg@163.com [College of Physics, Qingdao University, Qingdao 266071 (China); Institute of Complexity Science, Qingdao University, Qingdao 266071 (China); Teng, Bing, E-mail: 5108tb@163.com [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China); Kong, Weijin; Zhang, Shiming; Li, Yuyi [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China); Li, Jianhong [CRYSTECH Inc., 266107 Qingdao (China); Yang, Liting; Cao, Lifeng [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China); Van Smaalen, Sander [Laboratory of Crystallography, University of Bayreuth, Bayreuth 95447 (Germany)

    2016-01-15

    YCa{sub 4}O(BO{sub 3}){sub 3} (YCOB) crystals co-doped with 3 at% Er{sup 3+} and 20 at% Yb{sup 3+} were successfully grown by the Czochralski method. X-ray powder diffraction (XRPD) results show that the as-grown Er:Yb:YCOB crystal belongs to the monoclinic system with space group Cm. And the lattice parameters are a=8.076(8) Å, b=16.023(7) Å, c=3.528(4) Å and β=101.15(4)°. Crystal defects were revealed by chemical etching experiments. The density of etch pits, attributed to dislocations and observed on (010) planes, was found to be not uniform along the crystal diameter. The detailed polarized absorption spectra were measured. The polarized absorption cross sections at 977 nm are 1.01×10{sup −20}, 1.22×10{sup −20} and 1.05×10{sup −20} cm{sup 2} for E//X, E//Y and E//Z, respectively. And the polarized absorption cross sections at 1538 nm is about 1.86×10{sup −20} cm{sup 2} for both E//X and E//Z, but for E//Y the result is 1.03×10{sup −20} cm{sup 2}, which is much smaller. The relationship between the crystal structure and absorption spectra was discussed. - Graphical abstract: The as-grown bulk Er:Yb:YCOB crystal (the long axis is along the b-axis) and LeBail fit to the XRPD pattern of Er:Yb:YCOB (top) compared to the diffraction pattern of YCOB from the JCPDS data bank (bottom). Reflection markers indicate the calculated reflection positions. The middle trace gives the difference between observed and calculated intensity. Reflection indices corresponding to the strongest diffraction peaks are marked on the experimental pattern. - Highlights: • Er:Yb:YCOB crystal with a new composition was grown. • XRPD and FT-IR showed a certain degree of deformation in the crystal structure. • Detailed polarized absorption cross sections at 977 nm and 1538 nm were calculated. • Crystal defects were clearly revealed by chemical etching experiments.

  12. Effect of deep native defects on ultrasound propagation in TlInS{sub 2} layered crystal

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Suleymanov, Rauf A. [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov Avenue 13, Vitebsk 210717 (Belarus); Kırbaş, Cafer [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); The Scientific and Technological Research Council of Turkey, National Metrology Institute (TUBITAK UME), PQ 54 41470 Gebze, Kocaeli (Turkey)

    2016-09-15

    We have investigated p-type semiconductor–ferroelectric TlInS{sub 2} by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS{sub 2}. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS{sub 2} was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS{sub 2} was shown.

  13. Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

    Science.gov (United States)

    Sueoka, K.; Nakamura, K.; Vanhellemont, J.

    2017-09-01

    For the development of crystal pulling processes for 450 mm-diameter defect-free Si crystals, it is important to evaluate the impact of thermal stress on intrinsic point defect behavior during crystal growth. In a crystal growing from a melt, the melt/solid interface can be considered as being stress-free. Due to that the thermal stress in the growing substrate near the interface is internal plane stress. Previously, we evaluated the impact of (001) planar-isotropic stress on the formation enthalpy (Hf) of the vacancy (V) and the self-interstitial (I) using density functional theory (DFT) calculations, and explained quantitatively the published experimental values of the so-called ;Voronkov criterion;. The thermal stress in a growing crystal is indeed planar but is not isotropic in the plane except for the central region of the crystal. The purpose of the present study is to estimate the impact of planar-anisotropic stress on the formation enthalpy Hf of V and I. It is found that the three stress dependencies of σx: σy=1: 1 (planar-isotropic), 2: 1, 5: 1 (planar-anisotropic) are close to each other, independent of the assumption of isotropic or anisotropic planar stress. This is the reason why the experimental results obtained over the whole radial direction of the crystal are well reproduced by the calculated results assuming planar-isotropic stress. A uniaxial stress dependence which is a good assumption for the crystal peripheral region, leads also to results that are close to those for the planar stress dependence. Also the mechanisms behind the experimentally observed impact of interstitial oxygen (Oi), introduced during Czochralski Si growth, on V and I concentrations are clarified. DFT calculations are performed to obtain the formation energies (Ef) of V and I at all sites within a sphere with 5 Å radius around the Oi atom. Formation (vibration) entropy (Sf) calculations for V and I are also performed. It is found that both EfV and SfV of V in the zigzag

  14. Energy flow in photonic crystal waveguides

    DEFF Research Database (Denmark)

    Søndergaard, Thomas; Dridi, Kim

    2000-01-01

    Theoretical and numerical investigations of energy flow in photonic crystal waveguides made of line defects and branching points are presented. It is shown that vortices of energy flow may occur, and the net energy flow along: the line defect is described via the effective propagation velocity....... Single-mode and multimode operations are studied, and dispersion relations are computed for different waveguide widths. Both strong positive, strong negative, and zero dispersion an possible. It is shown that geometric parameters such as the nature of the lattice, the line defect orientation, the defect...... width, and the branching-point geometry have a significant influence on the electrodynamics. These are important issues for the fabrication of photonic crystal structures....

  15. Thermal evolution of vacancy defects induced in 12 MeV H{sup +} irradiated 6H-SiC single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kerbiriou, X.; Barthe, M.F.; Gentils, A.; Desgardin, P. [CERI-CNRS, 3A rue de la Ferollerie, 45071 Orleans cedex 2 (France)

    2007-07-01

    In this work positron annihilation lifetime spectroscopy (PALS) has been used to investigate the evolution of the vacancy defects induced in 12 MeV H{sup +} irradiated SiC as a function of the temperature. The irradiation has been performed at room temperature at a fluence of 4 x 10{sup 16} cm{sup -2} in 6H-SiC single crystals using the CERI-Orleans cyclotron. Thermal treatments have been performed under an argon flux from 300 C up to 1050 C. The positron lifetime has been measured as a function of the temperature in the range 15-600 K. After irradiation, positrons detect negative ions and two types of vacancy defects: V{sub Si} monovacancies and V{sub Si}-V{sub C} divacancies. After annealing, the lifetime behaviour as a function of the measurement temperature changes indicating different annealing stages. An increase of the long lifetime component is specially observed whereas the corresponding intensity decreases. These changes are correlated to the migration of V{sub Si} and the clustering with V{sub Si}-V{sub C} to form a new vacancy defect. The lifetime of this new defect has been determined and is equal to 235{+-}2 ps. We propose that it is related to V{sub Si}-V{sub C}-V{sub Si}. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Huang, J.; Teal, A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Suntech R& D Australia, Botany, NSW 2019 (Australia); Varlamov, S.; Green, M.A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2016-06-30

    In this work, crystallographic orientation of polycrystalline silicon films on glass formed by continuous wave diode laser crystallization was studied. Most of the grain boundaries were coincidence lattice Σ3 twin boundaries and other types of boundaries such as, Σ6, Σ9, and Σ21 were also frequently observed. The highest photoluminescence signal and mobility were observed for a grain with (100) orientation in the normal direction. X-ray diffraction results showed the highest occupancies between 41 and 70% along the (110) orientation. However, the highest occupancies changed to (100) orientation when a 100 nm thick SiO{sub x} capping layer was applied. Suns-Voc measurement and photoluminescence showed that higher solar cell performance is obtained from the cell crystallized with the capping layer, which is suspected from increased occupancies of (100) orientation. - Highlights: • Linear grains parallel to the scan direction formed with high density. • Σ3 coincidence lattice (CSL) boundaries found inside a grain • Grain boundaries exhibit various CSL boundaries such as Σ9, Σ18, and Σ27. • Grain with < 100 > orientation in normal direction showed highest electrical properties. • Improved voltage observed when percentage of < 100 > normal orientation is increased.

  17. Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

    Institute of Scientific and Technical Information of China (English)

    Huang Wei-Qi; Chen Hang-Qiong; Shu Qin; Liu Shi-Rong; Qin Chao-Jian

    2012-01-01

    A new nanolaser concept using silicon quantum dots (QDs) is proposed.The conduction band opened by the quantum confinement effect gives the pumping levels.Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission.An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser.Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser.

  18. Light-Propagation Characteristics of Photonic Crystal Waveguide Based on SOI Materials at Different Polarized States

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Xia; XU Xing-Sheng; LI Fang; DU Wei; XIONG Gui-Guang; LIU Yu-Liang; CHEN Hong-Da

    2006-01-01

    @@ Strgight single-line defect optical waveguides in photonic crystal slabs are designed by the plane wave expansion method and fabricated into silicon-on-insulator (SOI) wafer by 248-nm deep UV lithography.

  19. Literature Review: Theory and Application of In-Line Inspection Technologies for Oil and Gas Pipeline Girth Weld Defection

    OpenAIRE

    Qingshan Feng; Rui Li; Baohua Nie; Shucong Liu; Lianyu Zhao; Hong Zhang

    2016-01-01

    Girth weld cracking is one of the main failure modes in oil and gas pipelines; girth weld cracking inspection has great economic and social significance for the intrinsic safety of pipelines. This paper introduces the typical girth weld defects of oil and gas pipelines and the common nondestructive testing methods, and systematically generalizes the progress in the studies on technical principles, signal analysis, defect sizing method and inspection reliability, etc., of magnetic flux leakage...

  20. Adsorption, Desorption, Surface Diffusion, Lattice Defect Formation, and Kink Incorporation Processes of Particles on Growth Interfaces of Colloidal Crystals with Attractive Interactions

    Directory of Open Access Journals (Sweden)

    Yoshihisa Suzuki

    2016-07-01

    Full Text Available Good model systems are required in order to understand crystal growth processes because, in many cases, precise incorporation processes of atoms or molecules cannot be visualized easily at the atomic or molecular level. Using a transmission-type optical microscope, we have successfully observed in situ adsorption, desorption, surface diffusion, lattice defect formation, and kink incorporation of particles on growth interfaces of colloidal crystals of polystyrene particles in aqueous sodium polyacrylate solutions. Precise surface transportation and kink incorporation processes of the particles into the colloidal crystals with attractive interactions were observed in situ at the particle level. In particular, contrary to the conventional expectations, the diffusion of particles along steps around a two-dimensional island of the growth interface was not the main route for kink incorporation. This is probably due to the number of bonds between adsorbed particles and particles in a crystal; the number exceeds the limit at which a particle easily exchanges its position to the adjacent one along the step. We also found novel desorption processes of particles from steps to terraces, attributing them to the assistance of attractive forces from additionally adsorbing particles to the particles on the steps.

  1. Effect of Mg2+ ions co-doping on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

    Science.gov (United States)

    Babin, V.; Bohacek, P.; Grigorjeva, L.; Kučera, M.; Nikl, M.; Zazubovich, S.; Zolotarjovs, A.

    2017-04-01

    Photo- and radioluminescence and thermally stimulated luminescence characteristics of Ce3+ - doped and Ce3+, Mg2+ co-doped Gd3(Ga,Al)5O12 (GAGG) single crystals of similar composition are investigated in the 9-500 K temperature range. The Ce3+ - related luminescence spectra and the photoluminescence decay kinetics in these crystals are found to be similar. Under photoexcitation in the Ce3+ - and Gd3+ - related absorption bands, no prominent rise of the photoluminescence intensity in time is observed neither in GAGG:Ce,Mg nor in GAGG:Ce crystals. The afterglow is strongly reduced in GAGG:Ce,Mg as compared to GAGG:Ce, and the afterglow decay kinetics is much faster. Co-doping with Mg2+ results in a drastic decrease of the thermally stimulated luminescence (TSL) intensity in the whole investigated temperature range and in the appearance of a new complex Mg2+ - related TSL glow curve peak around 285 K. After irradiation in the Ce3+ - related 3.6 eV absorption band, the TSL intensity in GAGG:Ce,Mg is found to be comparable with that in the GAGG:Ce epitaxial film of similar composition. The Mg2+ - induced changes in the concentration, origin and structure of the crystal lattice defects and their influence on the scintillation characteristics of GAGG:Ce,Mg are discussed.

  2. Spectroscopy of discrete vertically oriented single-crystals of n-type tetraazaterrylene: understanding the role of defects in molecular semiconductor photovoltaics.

    Science.gov (United States)

    Wise, A J; Zhang, Y; Fan, J; Wudl, F; Briseno, A L; Barnes, M D

    2014-08-14

    Recent synthetic work has realized a novel (n-type) small-molecule acceptor, 7,8,15,16-tetra-aza-terrylene (TAT), single-crystals of which can be grown oriented along the c-axis crystallographic direction, and over-coated with pentacene to form a highly ordered donor/acceptor interface for use in organic photovoltaic devices. However, characterization of single TAT crystals reveals highly variable emission spectra and excited state dynamics - properties which strongly influence photovoltaic performance. Through the use of single-crystal widefield imaging, photoluminescence spectroscopy, time correlated single photon counting, and resonant Raman studies, we conclude that this variability is a result of long-lived low-energy trap-emission from packing defects. Interestingly, we also discovered that TAT crystals whose width exceeds ∼200 nm begin acting as waveguides and optical microcavity resonators for their own photoluminescence. Several strategies are proposed for leveraging the size-dependant optical properties of TAT pillars to further enhance device performance using this active layer design.

  3. Bulk dislocation-U defect interaction, surface excitons and adsorptivity of atomic H on dislocated surfaces of LiH crystal: ab initio calculations

    Science.gov (United States)

    Shalabi, A. S.; Eid, Kh M.; El-Mahdy, A. M.; Kamel, M. A.; El-Barbary, A. A.

    2001-03-01

    An ab initio embedded cluster method was used to examine the bulk dislocation-U defect interaction, surface excitons and the adsorptivity of atomic H on dislocated surfaces of LiH using the Hartree-Fock approximation and the second-order Moller-Plesset perturbation correction. In the LiH crystal bulk, the results confirm: (1) U1 and U2 centres make dislocations more facile, (2) dislocation processes do not reduce the ionic conductivity of highly populated edge centred hydride interstitials and (3) the dislocation-U defect interaction increases monotonically in the series face→volume→edge centred interstitial structures. On LiH crystal surfaces the results confirm: (1) the exclusive dependence of band gaps and exciton bands on dislocation, (2) the strongest adsorption of atomic H on a surface is associated with X-dislocations, (3) dislocations are unable to change the nature of physical adsorption to chemical adsorption and (4) the mobility of atomic H over the Z-dislocated surface is more facile than that over the X-dislocated surface. As X-surface dislocation proceeds, the HOMO and LUMO levels of the substrate shift to higher energies and the band gap becomes narrower. This change in the electronic structure suggests that charge transfer from the X-dislocated surface is more facile in the course of adsorbate-substrate interaction.

  4. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  5. Laser patterning of nonlinear optical Bi2ZnB2O7 crystal lines in glass

    Directory of Open Access Journals (Sweden)

    Takayuki eKomatsu

    2015-05-01

    Full Text Available Bi2O3-based glasses are very attractive from the viewpoints of low-melting, high refractive index and crystallization, and the research on their glasses and glass-ceramics is at the frontiers of glass science and technology. Nonlinear optical Bi2ZnB2O7 crystal lines with a high orientation were patterned in 3Sm2O3-30.3Bi2O3-33.3ZnO-33.3B2O3 glass by using a laser-induced crystallization technique. It was confirmed from transmission electron microscope observations that crystals were formed in the inside of the glass, i.e., at the beneath of 4 micro-meter from the surface, although lasers (Yb:YVO4 laser with a wavelength of 1080 nm were focused at the glass surface. A new potential for optical device applications was added in Bi2O3-based glasses from the present study.

  6. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Thermal Conductivity of Ultrahigh Molecular Weight Polyethylene Crystal: Defect Effect Uncovered by 0 K Limit Phonon Diffusion.

    Science.gov (United States)

    Liu, Jing; Xu, Zaoli; Cheng, Zhe; Xu, Shen; Wang, Xinwei

    2015-12-16

    Crystalline ultrahigh molecular weight polyethylene (UHMWPE) has the highest reported thermal conductivity at room temperature: 104 W/(m·K), while theoretical predictions proposed an even higher value of 300 W/(m·K). Defects and amorphous fraction in practical UHMWPE fibers significantly reduces the thermal conductivity from the ideal value. Although the amorphous effect can be readily analyzed based on the effective medium theory, the defect effects are poorly understood. This work reports on the temperature-dependent behavior (down to 22 K) of thermal diffusivity and conductivity of UHMWPE fibers in anticipation of observing the reduction in phonon density and scattering rate against temperature and of freezing out high-momentum phonons to clearly observe the defect effects. By studying the temperature-dependent behavior of thermal reffusivity (Θ, inverse of thermal diffusivity) of UHMWPE fibers, we are able to quantify the defect effects on thermal conductivity. After taking out the amorphous region's effect, the residual thermal reffusivities (Θ0) for the studied two samples at the 0 K limit are determined as 3.45 × 10(4) and 2.95 × 10(4) s/m(2), respectively. For rare-/no-defects crystalline materials, Θ0 should be close to zero at the 0 K limit. The defect-induced low-momentum phonon mean free paths are determined as 8.06 and 9.42 nm for the two samples. They are smaller than the crystallite size in the (002) direction (19.7 nm) determined by X-ray diffraction. This strongly demonstrates the diffuse phonon scattering at the grain boundaries. The grain boundary thermal conductance (G) can be evaluated as G ≈ βρc(p)v with sound accuracy. At room temperature, G is around 3.73 GW/(m(2)·K) for S2, comparable to that of interfaces with tight atomic bonding.

  8. International Conference on Defects in Insulating Crystals Held at Parma, Italy on August 29th September 2nd, 1988

    Science.gov (United States)

    1988-09-01

    shift P(B) - v(C) - 190 cm- I coin- cides closely with the one (-170 cm-1 ) observed for isolated OH- defects. 437 Within these assignments the400 free...calculation of the ehreahold concentration coin- cides with the experiments. It seems that the model proposed 463 is reasonable. The conclusion in this...111116 11111I~2.0 111111-25 1 i MICROCOPY RESOLUTION TESI CHART ൰ 0INAt HLJR[Al[ iA l <IAN -APl, ]d.. A from the Al defects, and their eventual

  9. Research on the influence of machining introduced sub-surface defects and residue stress upon the mechanical properties of single crystal copper

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Large scale molecular dynamics simulations of nanomachining and stretching of single crystal copper are performed to analyze the machining process’ influence on the material’s mechanical properties. The simulation results show that the machining process will introduce interfacial defects inside the specimen and enhance the compressive stress beneath the surface. Gener- ally speaking, interfacial defects lead to the decrease of the strength limit, while residue compressive stress can enhance the elastic limit and even the strength limit. Various machining parameters are adopted to investigate their influence on the me- chanical behavior of machined specimen. Lower cutting speed and smaller cutting depth lead to less defects and greater residue compressive stress, which brings about better mechanical properties. The elastic limit increases by 36.8% under the cutting depth of 0.73 nm and decreases by 21.1% under the cutting depth of 1.46 nm. The strength limit increases by 7.7% under the cutting speed of 100 m/s and decreases by 28.2% under the cutting speed of 300 m/s.

  10. Wide-angle stop-gap chalcogenide photonic crystals generated by direct multiple-line laser writing

    Science.gov (United States)

    Nicoletti, E.; Bulla, D.; Luther-Davies, B.; Gu, M.

    2011-12-01

    We present the fabrication and the angle-resolved optical characterizations of three-dimensional chalcogenide photonic crystals with a wide-angle stop gap. Multiple-line scanning provides an effective remedy to the elongation of the focal spot in the z direction during direct laser writing fabrication in high refractive index and highly nonlinear chalcogenide glasses. The aspect ratio of the rods is reduced from 4.46 to 1.53, thus allowing the successful fabrication of three-dimensional chalcogenide photonic crystals with a face-centered cubic symmetry and quasi-circular rods. Suppression of the angle-resolved transmission spectra is observed at a wide range of incident angles.

  11. Dynamic transition in current-driven disordered flux-line lattice in single-crystal of Bi-2212

    Energy Technology Data Exchange (ETDEWEB)

    Ammor, L.; Ruyter, A.

    2014-11-15

    We have measured the current–voltage characteristics for both as-grown and irradiated Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} single crystals at T = 5 K in a magnetic field applied parallel to c axis. The results show a variety of dynamical behavior above the depinning threshold, depending on the vortex–vortex interaction (λ{sub ab}/a{sub 0}) strength and the nature of the quenched disorder (point-like or columnar defects). When the flux lattice is soft, our experimental measurements in both samples have been attributed to plastic flow, including strong metastability and history dependence of the depinning process. The vortex motion in this regime is thought of relatively weakly pinned vortices past more strongly pinned neighbors. A power-law scaling, fit between voltage and applied current can be obtained for the onset of motion in both samples, with different apparent critical exponent depending on defect nature and the strength of interactions. In the plastic regime, the usual scaling ansatz associated with dynamic critical phenomena V scales as (I − I{sub c}){sup β}, where β ∼ 2.2 ± 0.1 and 1.22 ± 0.021 for as-grown and β ≈ 1.49 ± 0.07 for irradiated samples, respectively. Finally, in both cases of defects, with increasing the strength of vortex–vortex interaction a dynamical transition is observed as confirmed by the discontinuity in the vortex–vortex interactions dependence of the critical exponent β. More, our results confirm the important role of the system dimensionnality on vortex dynamics.

  12. Observation of genuine wave vector (k or β) gap in a dynamic transmission line and temporal photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Reyes-Ayona, J. R.; Halevi, P., E-mail: halevi@inaoep.mx [Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Tonantzintla, Puebla 72840 (Mexico)

    2015-08-17

    By definition, a temporal photonic crystal (TPC) has a permittivity ε(t) that varies periodically with time. We prove that, in the long wavelength limit, a TPC is accurately mimicked by a dynamic transmission line (DTL) having a capacitance (inductance) per unit length equal to ε(t) (μ). Employing a DTL in the microwave region, we measured the photonic band structure, which results to display a genuine wave vector (k or β) gap, in very good agreement with our theoretical model and the equivalent TPC.

  13. Observation of genuine wave vector (k or β) gap in a dynamic transmission line and temporal photonic crystals

    Science.gov (United States)

    Reyes-Ayona, J. R.; Halevi, P.

    2015-08-01

    By definition, a temporal photonic crystal (TPC) has a permittivity ɛ(t) that varies periodically with time. We prove that, in the long wavelength limit, a TPC is accurately mimicked by a dynamic transmission line (DTL) having a capacitance (inductance) per unit length equal to ɛ(t) (μ). Employing a DTL in the microwave region, we measured the photonic band structure, which results to display a genuine wave vector (k or β) gap, in very good agreement with our theoretical model and the equivalent TPC.

  14. Dual-plane in-line digital holography based on liquid crystal on silicon spatial light modulator.

    Science.gov (United States)

    Panezai, Spozmai; Wang, Dayong; Zhao, Jie; Wang, Yunxin; Rong, Lu

    2014-09-20

    A dual-plane in-line digital holographic method is proposed with a liquid crystal on silicon (LCOS) spatial light modulator (SLM) for recording holograms at two slightly displaced planes. The computer-generated chirp-like complex reflectance is displayed on the LCOS SLM to adapt the object beam at two planes for recording two holograms processed to eliminate the DC term and twin image accurately; no mechanical components or manual operation during data acquisition is required. The proposed approach improves the speed, accuracy, and stability of the experiment. Computer simulation and experiments for both amplitude and phase objects are carried out to validate the proposed method.

  15. Paramagnetic defects in KH{sub 2}PO{sub 4} crystals with high concentration of embedded TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Grachev, Valentin G., E-mail: grachev@physics.montana.edu; Tse, Romand; Malovichko, Galina I. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Pritula, Igor M.; Bezkrovnaya, Olga N.; Kosinova, Anna V. [Institute for Single Crystals, NAS of Ukraine, Kharkiv (Ukraine)

    2016-01-21

    Qualitative transformations of spectra of Electron Paramagnetic Resonance, EPR, were found in KH{sub 2}PO{sub 4} crystals grown from liquor with 10{sup −5}–10{sup −1 }wt. % of anatase TiO{sub 2} nanoparticles in comparison with nominally pure KH{sub 2}PO{sub 4}. The nanoparticles have larger segregation coefficient for prismatic parts of the crystals than for pyramidal ones. Significant decrease in resonance absorption, complete disappearance of EPR lines of Fe{sup 3+} and Cr{sup 3+} centers, and appearance of four weak lines of equal intensities together with broad asymmetric lines with g-factors about 2.07–2.5 was observed in pyramidal parts grown with concentration of TiO{sub 2} nanoparticles larger than the threshold value 10{sup −2 }wt. %. The four lines were attributed to non-controlled impurity As substituted for P. In the presence of TiO{sub 2} nanoparticles, non-paramagnetic AsO{sub 4}{sup 3−} clusters trap electrons becoming AsO{sub 4}{sup 4−}. Disappearance of Fe{sup 3+} and Cr{sup 3+} centers was explained by their recharge to “EPR-silent” states and/or pairing at the surface of TiO{sub 2} nanoparticles.

  16. 四川平武富碱型绿柱石晶体的晶格缺陷与生长机制%CRYSTAL DEFECT AND GROWTH MECHANISM OF ALKALI-RICH BERYL CRYSTAL FROM PINGWU,SICHUAN,CHIAN

    Institute of Scientific and Technical Information of China (English)

    亓利剑; 裴景成; 石国华; 罗永安; 周开灿

    2001-01-01

    tabular beryl crystal in Sichuan Province is attributed mainly to the synergy of the linear defects (screw dislocation),face defects (stacking fault and twining) and point defects (vacancy and inclusion) in the beryl crystal.

  17. Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

    Science.gov (United States)

    Kamiyama, E.; Vanhellemont, J.; Sueoka, K.; Araki, K.; Izunome, K.

    2013-02-01

    When pulling large diameter Si crystals from a melt close to the Voronkov criterion, small changes in pulling speed and thermal gradient can lead to the formation of voids leading to detrimental pits on the polished wafer surface. The creation of voids is mainly due to the lowering of the vacancy formation energy due to increased thermal compressive stress. The small size and low density of the formed voids when pulling crystals close to the Voronkov criterion conditions are a challenge for wafer surface inspection tools and possible solutions are discussed.

  18. FRP衬里树脂重防腐之缺陷及解决办法%Defects&Solutions of FRP Lining Resin Heavy-duty

    Institute of Scientific and Technical Information of China (English)

    欧阳自强

    2012-01-01

      This paper systematically summarizes problems and fabrication quality defects of the thermosetting resin, particularly unsaturated polyester resins and vinyl ester resin in anti-corrosion FRP Lining engineer, then analyzes their reasons and put forward solutions.%  本文系统总结了热固性树脂,尤其是不饱和聚酯树脂和乙烯基酯树脂在制作重防腐玻璃钢衬里时遇到的问题及施工质量缺陷,分析其原因,提出解决对策。

  19. Defects in metal crystals. Progress report, May 1, 1976--April 30, 1977. [Heavy ions and fast neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Seidman, D N

    1977-02-01

    Work performed during 1976 to investigate point defects, aggregates of point defects and their interactions with one another is described. Strong emphasis is placed on the use of different irradiating species (300 to 700 eV Xe/sup +/ ions, 300 eV and 30 keV He/sup +/ ions, 20- to 40-keV W/sup +/ ions, 20- to 40-keV Mo/sup +/ ions, 20- to 40-keV Cr/sup +/ ions and fast neutrons) to introduce both vacancies and interstitials in a number of pure metals (Mo, W, Au, Ta) and alloys (Pt-Au, W-Re, Mo-Ti, Mo-Ti-Zr, Ni/sub 4/Mo, Ni/sub 3/Fe, Ni/sub 3/Mn, low swelling 316 stainless steel and commercial 316 stainless steel). (GHT)

  20. Periodic order and defects in Ni-based inverse opal-like crystals on the mesoscopic and atomic scale

    NARCIS (Netherlands)

    Chumakova, A. V.; Valkovskiy, G. A.; Mistonov, A. A.; Dyadkin, V. A.; Grigoryeva, N. A.; Sapoletova, N. A.; Napolskii, K. S.; Eliseev, A. A.; Petukhov, Andrei V.; Grigoriev, S. V.

    2014-01-01

    The structure of inverse opal crystals based on nickel was probed on the mesoscopic and atomic levels by a set of complementary techniques such as scanning electron microscopy and synchrotron microradian and wide-angle diffraction. The microradian diffraction revealed the mesoscopic-scale face-cente

  1. 含单排线缺陷锯齿型石墨烯纳米带的电磁性质∗%Electromagnetic prop erties of zigzag graphene nanoribb ons with single-row line defect

    Institute of Scientific and Technical Information of China (English)

    张华林; 孙琳; 王鼎

    2016-01-01

    In this paper, electromagnetic properties of the zigzag graphene nanoribbon (ZGNR) with a single-row line defect are studied by using the first-principles method based on the density functional theory. The energy band structures, transmission spectra, spin polarization charge densities, total energies, and Bloch states of the ZGNR are calculated when the line defect is located at different positions inside a ZGNR. It is shown that ZGNRs with and without a line defect at nonmagnetic and ferromagnetic states are metals, but the reasons for it to become different metals are different. At the antiferromagnetic state, the closer to the edge of ZGNR the line defect, the more obvious the influence on electromagnetic properties of ZGNR is. In the process of the defect moving from the symmetrical axis of ZGNR to the edge, the ZGNR has a phase transition from a semiconductor to a half metal, and then to a metal gradually. Although the ZGNR with a line defect close to the central line is a semiconductor, its band gap is smaller than the band gap of perfect ZGNR, owing to the new band introduced by the defects. When the line defect is located nearest to the boundary, the ZGNR is stablest. When the line defect is located next nearest to the boundary, the ZGNR is unstablest. When the line defect is located nearest or next nearest to boundary, the ground state of the ZGNR is a ferromagnetic state. However, if the line defect is located at the symmetric axis of ZGNR (M5) or nearest to the symmetric axis, the ground state would be an antiferromagnetic state. At the antiferromagnetic state, the phase transition of M5 from a semiconductor to a half metal can be achieved by applying an appropriate transverse electric field. Without a transverse electric field, M5 is a semiconductor, and the band structures of up- and down-spin states are both degenerate. With a transverse electric field, band structures of up- and down-spin states near the Fermi level are both split. When the electric

  2. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-11-01

    This report summarizes technical progress over the second six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on evaluating corrosion effects in single crystal sapphire at temperatures up to 1400 C, and designing the sensor mechanical packaging with input from Wabash River Power Plant. Upcoming meetings will establish details for the gasifier field test.

  3. Neural network model for the on-line monitoring of a crystallization process

    Directory of Open Access Journals (Sweden)

    Guardani R.

    2001-01-01

    Full Text Available This paper presents the results of the application of a recently developed technique, based on Neural Networks (NN, in the recognition of angular distribution patterns of light scattered by particles in suspension, for the purpose of estimating concentration and crystal size distribution (CSD in a precipitation process based on the addition of antisolvent (a model system consisting of sodium chloride, water and ethanol. In the first step, in NN model was fitted, using particles with different size distributions and concentrations. Then the model was used to monitor the process, thus enabling a fast and reliable estimation of supersaturation and CSD. Such information, which is difficult to obtain by any other means, can be used in the study of fundamental aspects of crystallization and precipitation processes.

  4. Stark level analysis of the spectral line shape of electronic transitions in rare earth ions embedded in host crystals

    Science.gov (United States)

    Steinkemper, H.; Fischer, S.; Hermle, M.; Goldschmidt, J. C.

    2013-05-01

    Rare earth ions embedded in host crystals are of great interest for many applications. Due to the crystal field of the host material, the energy levels of the rare earth ions split into several Stark levels. The resulting broadening of the spectral line shapes of transitions between those levels determines the upconversion phenomena, especially under broad-spectrum illumination, which are relevant for photovoltaics for instance. In this paper, we present a method to determine the spectral line shape of energy level transitions of rare earth ions from the absorption spectrum of the investigated material. A parameter model is used to describe the structure of the individual energy levels based on a representation of the Stark splitting. The parameters of the model are then determined with an evolutionary optimization algorithm. The described method is applied to the model system of β-NaEr0.2Y0.8F4. The results indicate that for illumination with a wavelength around 1523 nm, simple upconversion processes such as two-step absorption or direct energy transfer are less efficient than commonly assumed. Hence a sequence of efficient processes is suggested as an explanation for the high upconversion quantum yield of β-NaEr0.2Y0.8F4, which has not yet been reported in the literature.

  5. Studies of the defect structure from the calculations of optical and electron paramagnetic resonance spectra for Ni2+ centre in -LiIO3 crystal

    Indian Academy of Sciences (India)

    Feng Wen-Lin; Zheng Wen-Chen

    2008-09-01

    By calculating the optical spectrum band positions and EPR parameters ( factors, ∥, ⊥ and zero-field splitting ) by diagonalizing the complete energy matrix of 3d8 ions in trigonal symmetry, the defect structure of Ni2+ centre in -LiIO3 crystal is studied. It is found that to reach the good fits of optical and EPR data between calculation and experiment, the Ni2+ ion should shift by ≈ 0.298 Å along C3 -axis and the O2− ions between the Ni2+ ion and Li+ vacancy (Li) should be displaced away from the Li by ≈ 0.097 Å because of the electrostatic interaction. The results are discussed.

  6. Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method

    Science.gov (United States)

    Feng, He; Xu, Wusheng; Ren, Guohao; Yang, Qiuhong; Xie, Jianjun; Xu, Jun; Xu, Jiayue

    2013-02-01

    Single crystal of Gd2Si2O7:Ce (GPS) presenting attractive scintillation performance was grown by the floating zone method. The vacuum ultra-violet (VUV) excitation and emission, ultra-violet (UV) excitation and emission spectra and fluorescent decay time at 77 K and RT were measured and discussed. Relative energy levels of 5d sublevels of Ce3+ in GPS:Ce are detected by the VUV excitation spectrum. The UV emission curve of GPS:1%Ce peaks around 382 nm at 77 K and moves towards longer wavelength direction as temperature increases. Thermally stimulated luminescence (TSL) was employed to investigate the defects in GPS:1%Ce. Energy depths of two traps detected in GPS:1%Ce are 0.64 and 1.00 eV.

  7. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  8. Protein Crystallization

    Science.gov (United States)

    Chernov, Alexander A.

    2005-01-01

    Nucleation, growth and perfection of protein crystals will be overviewed along with crystal mechanical properties. The knowledge is based on experiments using optical and force crystals behave similar to inorganic crystals, though with a difference in orders of magnitude in growing parameters. For example, the low incorporation rate of large biomolecules requires up to 100 times larger supersaturation to grow protein, rather than inorganic crystals. Nucleation is often poorly reproducible, partly because of turbulence accompanying the mixing of precipitant with protein solution. Light scattering reveals fluctuations of molecular cluster size, its growth, surface energies and increased clustering as protein ages. Growth most often occurs layer-by-layer resulting in faceted crystals. New molecular layer on crystal face is terminated by a step where molecular incorporation occurs. Quantitative data on the incorporation rate will be discussed. Rounded crystals with molecularly disordered interfaces will be explained. Defects in crystals compromise the x-ray diffraction resolution crucially needed to find the 3D atomic structure of biomolecules. The defects are immobile so that birth defects stay forever. All lattice defects known for inorganics are revealed in protein crystals. Contribution of molecular conformations to lattice disorder is important, but not studied. This contribution may be enhanced by stress field from other defects. Homologous impurities (e.g., dimers, acetylated molecules) are trapped more willingly by a growing crystal than foreign protein impurities. The trapped impurities induce internal stress eliminated in crystals exceeding a critical size (part of mni for ferritin, lysozyme). Lesser impurities are trapped from stagnant, as compared to the flowing, solution. Freezing may induce much more defects unless quickly amorphysizing intracrystalline water.

  9. Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab

    Science.gov (United States)

    Sánchez-Cano, R.; Porras-Montenegro, N.

    2016-04-01

    We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the finite-difference time-domain methods. The photonic-crystal hole slab is composed of a 2D hexagonal array with identical air holes and a circular cross section, embedded in a non-dispersive III-V semiconductor quaternary alloy slab, which has a high value of dielectric function in the near-infrared region, and the symmetric defect is formed by increasing the radius of a single hole in the 2D hexagonal lattice. We show that the band gap ratio depends linearly on the temperature in the range 150-400 K. Our results show a strong temperature dependence of the quality factor Q, the maximum (Q = 7000) is reached at T = 350 hbox {K}, but if the temperature continues to increase, the efficiency drops sharply. Furthermore, we present numerical predictions for the electromagnetic field distribution at T = 350 hbox {K}.

  10. The role of dissipation and defect energy in variational formulations of problems in strain-gradient plasticity. Part 2: single-crystal plasticity

    Science.gov (United States)

    Reddy, B. D.

    2011-11-01

    Variational formulations are constructed for rate-independent problems in small-deformation single-crystal strain-gradient plasticity. The framework, based on that of Gurtin (J Mech Phys Solids 50: 5-32, 2002), makes use of the flow rule expressed in terms of the dissipation function. Provision is made for energetic and dissipative microstresses. Both recoverable and non-recoverable defect energies are incorporated into the variational framework. The recoverable energies include those that depend smoothly on the slip gradients, the Burgers tensor, or on the dislocation densities (Gurtin et al. J Mech Phys Solids 55:1853-1878, 2007), as well as an energy proposed by Ohno and Okumura (J Mech Phys Solids 55:1879-1898, 2007), which leads to excellent agreement with experimental results, and which is positively homogeneous and therefore not differentiable at zero slip gradient. Furthermore, the variational formulation accommodates a non-recoverable energy due to Ohno et al. (Int J Mod Phys B 22:5937-5942, 2008), which is also positively homogeneous, and a function of the accumulated dislocation density. Conditions for the existence and uniqueness of solutions are established for the various examples of defect energy, with or without the presence of hardening or slip resistance.

  11. Semiconductors Under Ion Radiation: Ultrafast Electron-Ion Dynamics in Perfect Crystals and the Effect of Defects

    Science.gov (United States)

    Lee, Cheng-Wei; Schleife, André

    Stability and safety issues have been challenging difficulties for materials and devices under radiation such as solar panels in outer space. On the other hand, radiation can be utilized to modify materials and increase their performance via focused-ion beam patterning at nano-scale. In order to grasp the underlying processes, further understanding of the radiation-material and radiation-defect interactions is required and inevitably involves the electron-ion dynamics that was traditionally hard to capture. By applying Ehrenfest dynamics based on time-dependent density functional theory, we have been able to perform real-time simulation of electron-ion dynamics in MgO and InP/GaP. By simulating a high-energy proton penetrating the material, the energy gain of electronic system can be interpreted as electronic stopping power and the result is compared to existing data. We also study electronic stopping in the vicinity of defects: for both oxygen vacancy in MgO and interface of InP/GaP superlattice, electronic stopping shows strong dependence on the velocity of the proton. To study the energy transfer from electronic system to lattice, simulations of about 100 femto-seconds are performed and we analyze the difference between Ehrenfest and Born-Oppenheimer molecular dynamics.

  12. Photonic band gap and defect mode of one-dimensional photonic crystal coated from a mixture of (HMDSO, N2) layers deposited by PECVD

    Science.gov (United States)

    Amri, R.; Sahel, S.; Gamra, D.; Lejeune, M.; Clin, M.; Zellama, K.; Bouchriha, H.

    2017-04-01

    One dimensional photonic crystal based on a mixture of an organic compound HMDSO and nitrogen N2, is elaborated by radiofrequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) at different radiofrequency powers. The variation of the radiofrequency power for a flow of N2/HMDSO ratio equal to 0.4, leads to obtain two kinds of layers A and B with refractive index nA = 2 and nB = 1.55 corresponding to RF power of 200 W and 20 W, respectively. The analysis of the infrared results shows that these layers have the same chemical composition element with different structure. These layers, which exhibit a good indexes difference (nA - nB) contrast, allowed then the elaboration of a one-photonic crystal from the same initial gas mixture, which is the aim of this work. After the optimization of the layers thickness, we have measured transmission and reflection spectra and we found that the photonic band gap (PBG) appears after 15 periods of alternating A and B deposited layers. The introduction of defect in the structure leads to obtain a localized mode in the center of the PBG corresponding to the telecommunication wave length 1.55 μm. Finally, we have successfully interpreted our experimental results by using a theoretical model based on transfer matrix method.

  13. Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes

    Science.gov (United States)

    Kasu, Makoto; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oshima, Takayoshi; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu

    2016-12-01

    We fabricated Schottky barrier diodes (SBDs) on the entire surface of a (0\\bar{1}0) β-Ga2O3 single crystal, and investigated the leakage current in both forward and reverse directions. Subsequently, we investigated the distribution of dislocation and void etch pits on the entire surface. The dislocation etch pit density on the surface ranged from void etch pit density on the surface ranged from void etch pit densities, we found that dislocations are closely related to the SBD reverse leakage current, and that not all voids produce the leakage current.

  14. On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects

    Energy Technology Data Exchange (ETDEWEB)

    Gaidar, G. P., E-mail: gaydar@kinr.kiev.ua [National Academy of Sciences of Ukraine, Institute for Nuclear Research (Ukraine)

    2015-09-15

    A variation in the tensoresistance of n-Ge:Sb and n-Si:As crystals as a result of irradiation with γ-ray photons ({sup 60}Co source) at fixed temperatures under conditions of the application of uniaxial elastic stress (0 ≤ X ≤ 1.2 GPa) along the main crystallographic direction is studied. It is found that, in the case of the deformation axis being in an asymmetric position relative to the isoenergetic ellipsoids, there is a maximum for the dependences of the tensoresistance ρ{sub X}/ρ{sub 0} = f(X); an explanation as to the nature of the observed effect is suggested. Tensoresistance is revealed in unirradiated n-Si:As crystals in the case of the deformation axis being in a symmetric position relative to all isoenergetic ellipsoids; the value of the tensoresistance as a result of irradiation with γ-ray photons decreases. It is shown that this effect can be attributed to a variation in the mobility of electrons in the conduction band as a result of an increase in the transverse effective mass and the appearance of new deep-level centers under the effect of irradiation, respectively.

  15. Role of atomic-level defects and electronic energy loss on amorphization in LiNbO3 single crystals

    Science.gov (United States)

    Sellami, N.; Crespillo, M. L.; Xue, H.; Zhang, Y.; Weber, W. J.

    2017-08-01

    Understanding complex non-equilibrium defect processes, where multiple irradiation mechanisms may take place simultaneously, is a long standing subject in material science. The separate and combined effects of elastic and inelastic energy loss are a very complicated and challenging topic. In this work, LiNbO3 has been irradiated with 0.9 MeV Si+ and 8 MeV O3+, which are representative of regimes where nuclear (S n) and electronic (S e) energy loss are dominant, respectively. The evolution of damage has been investigated by Rutherford backscattering spectrometry (RBS) in channeling configuration. Pristine samples were irradiated with 0.9 MeV Si+ ions to create different pre-existing damage states. Below the threshold (S e,th  =  5-6 keV nm-1) for amorphous track formation in this material, irradiation of the pristine samples with a highly ionizing beam of 8 MeV O3+ ions, with nearly constant S e of about 3 keV nm-1, induces a crystalline to amorphous phase transition at high ion fluences. In the pre-damaged samples, the electronic energy loss from the 8 MeV O3+ ions interacts synergistically with the pre-existing damage, resulting in a rapid, non-linear increase in damage production. There is a significant reduction in the incubation fluence for rapid amorphization with the increasing amount of pre-existing damage. These results highlight the important role of atomic-level defects on increasing the sensitivity of some oxides to amorphization induced by electronic energy loss. Controlling the nature and amount of pre-damage may provide a new approach to tuning optical properties for photonic device applications.

  16. Shift and broadening of emission lines in Nd$^{3+}$:YAG laser crystal influenced by input energy

    Indian Academy of Sciences (India)

    POURMAND SEYED EBRAHIM; REZAEI GHASEM

    2016-06-01

    Spectroscopic properties of the flashlamp-pumped Nd$^{3+}$:YAG laser as a function of input energy were studied over the range of 18–75 J. The spectral widths and shifts of quasi-three-level and four-level inter-Stark emissions within the respective intermanifold transitions of $^4$F$_{3/2}$ $\\rightarrow$ $^{4}$I$_{9/2} $ and $^{4}$F$_{3/2}$ $\\rightarrow$ $^{4}$I$_{11/2}$ were investigated. The emission lines of $^{4}$F$_{3/2}$ $\\rightarrow$ $^{4}$I$_{9/2}$ shifted towards longer wavelength (red shift) and broadened, while the positions and linewidths of the $^{4}$F$_{3/2}$ $\\rightarrow$ $^{4}$I$_{11/2}$ transition lines remained constant by increasing the pumping energy. This is attributed to the thermal population as well as one-phonon and multiphonon emission processes in the ground state. This phenomenon degrades the output performance of the lasers.

  17. LINES

    Directory of Open Access Journals (Sweden)

    Minas Bakalchev

    2015-10-01

    Full Text Available The perception of elements in a system often creates their interdependence, interconditionality, and suppression. The lines from a basic geometrical element have become the model of a reductive world based on isolation according to certain criteria such as function, structure, and social organization. Their traces are experienced in the contemporary world as fragments or ruins of a system of domination of an assumed hierarchical unity. How can one release oneself from such dependence or determinism? How can the lines become less “systematic” and forms more autonomous, and less reductive? How is a form released from modernistic determinism on the new controversial ground? How can these elements or forms of representation become forms of action in the present complex world? In this paper, the meaning of lines through the ideas of Le Corbusier, Leonidov, Picasso, and Hitchcock is presented. Spatial research was made through a series of examples arising from the projects of the architectural studio “Residential Transformations”, which was a backbone for mapping the possibilities ranging from playfulness to exactness, as tactics of transformation in the different contexts of the contemporary world.

  18. On-line near infrared spectroscopy as a Process Analytical Technology (PAT) tool to control an industrial seeded API crystallization.

    Science.gov (United States)

    Schaefer, C; Lecomte, C; Clicq, D; Merschaert, A; Norrant, E; Fotiadu, F

    2013-09-01

    The final step of an active pharmaceutical ingredient (API) manufacturing synthesis process consists of a crystallization during which the API and residual solvent contents have to be quantified precisely in order to reach a predefined seeding point. A feasibility study was conducted to demonstrate the suitability of on-line NIR spectroscopy to control this step in line with new version of the European Medicines Agency (EMA) guideline [1]. A quantitative method was developed at laboratory scale using statistical design of experiments (DOE) and multivariate data analysis such as principal component analysis (PCA) and partial least squares (PLS) regression. NIR models were built to quantify the API in the range of 9-12% (w/w) and to quantify the residual methanol in the range of 0-3% (w/w). To improve the predictive ability of the models, the development procedure encompassed: outliers elimination, optimum model rank definition, spectral range and spectral pre-treatment selection. Conventional criteria such as, number of PLS factors, R(2), root mean square errors of calibration, cross-validation and prediction (RMSEC, RMSECV, RMSEP) enabled the selection of three model candidates. These models were tested in the industrial pilot plant during three technical campaigns. Results of the most suitable models were evaluated against to the chromatographic reference methods. Maximum relative bias of 2.88% was obtained about API target content. Absolute bias of 0.01 and 0.02% (w/w) respectively were achieved at methanol content levels of 0.10 and 0.13% (w/w). The repeatability was assessed as sufficient for the on-line monitoring of the 2 analytes. The present feasibility study confirmed the possibility to use on-line NIR spectroscopy as a PAT tool to monitor in real-time both the API and the residual methanol contents, in order to control the seeding of an API crystallization at industrial scale. Furthermore, the successful scale-up of the method proved its capability to be

  19. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  20. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  1. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang

    2004-04-01

    This report summarizes technical progress over the third six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on sensor probe design and machining, sensor electronics design, software algorithm design, sensor field installation procedures, and sensor remote data access and control. Field testing will begin in the next several weeks.

  2. In-Line Measurement of Water Content in Ethanol Using a PVA-Coated Quartz Crystal Microbalance

    Directory of Open Access Journals (Sweden)

    Byoung Chul Kim

    2014-01-01

    Full Text Available An in-line device for measuring the water content in ethanol was developed using a polyvinyl alcohol (PVA-coated quartz crystal microbalance. Bio-ethanol is widely used as the replacement of gasoline, and its water content is a key component of its specifications. When the PVA-coated quartz crystal microbalance is contacted with ethanol containing a small amount of water, the water is absorbed into the PVA increasing the load on the microbalance surface to cause a frequency drop. The determination performance of the PVA-coated microbalance is examined by measuring the frequency decreases in ethanol containing 2% to 10% water while the ethanol flows through the measurement device. The measurements indicates that the higher water content is the more the frequency reduction is, though some deviation in the measurements is observed. This indicates that the frequency measurement of an unknown concentration of water in ethanol can be used to determine the water content in ethanol. The PVA coating is examined by microscopy and FTIR (Fourier transform infrared spectroscopy.

  3. In-line measurement of water content in ethanol using a PVA-coated quartz crystal microbalance.

    Science.gov (United States)

    Kim, Byoung Chul; Yamamoto, Takuji; Kim, Young Han

    2014-01-16

    An in-line device for measuring the water content in ethanol was developed using a polyvinyl alcohol (PVA)-coated quartz crystal microbalance. Bio-ethanol is widely used as the replacement of gasoline, and its water content is a key component of its specifications. When the PVA-coated quartz crystal microbalance is contacted with ethanol containing a small amount of water, the water is absorbed into the PVA increasing the load on the microbalance surface to cause a frequency drop. The determination performance of the PVA-coated microbalance is examined by measuring the frequency decreases in ethanol containing 2% to 10% water while the ethanol flows through the measurement device. The measurements indicates that the higher water content is the more the frequency reduction is, though some deviation in the measurements is observed. This indicates that the frequency measurement of an unknown concentration of water in ethanol can be used to determine the water content in ethanol. The PVA coating is examined by microscopy and FTIR (Fourier transform infrared) spectroscopy.

  4. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  5. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  6. Tunable flat band slow light in reconfigurable photonic crystal waveguides based on magnetic fluids

    DEFF Research Database (Denmark)

    Pu, Shengli; Wang, Haotian; Wang, Ning;

    2013-01-01

    A kind of two-dimensional photonic crystal line-defect waveguide with 45 -rotated square lattice is proposed to present slow light phenomena. Infiltrating the photonic crystal waveguide with appropriate magnetic fluids can generate very wide flat bands of guided modes, which give rise...

  7. Phase Error Caused by Speed Mismatch Analysis in the Line-Scan Defect Detection by Using Fourier Transform Technique

    Directory of Open Access Journals (Sweden)

    Eryi Hu

    2015-01-01

    Full Text Available The phase error caused by the speed mismatch issue is researched in the line-scan images capturing 3D profile measurement. The experimental system is constructed by a line-scan CCD camera, an object moving device, a digital fringe pattern projector, and a personal computer. In the experiment procedure, the detected object is moving relative to the image capturing system by using a motorized translation stage in a stable velocity. The digital fringe pattern is projected onto the detected object, and then the deformed patterns are captured and recorded in the computer. The object surface profile can be calculated by the Fourier transform profilometry. However, the moving speed mismatch error will still exist in most of the engineering application occasion even after an image system calibration. When the moving speed of the detected object is faster than the expected value, the captured image will be compressed in the moving direction of the detected object. In order to overcome this kind of measurement error, an image recovering algorithm is proposed to reconstruct the original compressed image. Thus, the phase values can be extracted much more accurately by the reconstructed images. And then, the phase error distribution caused by the speed mismatch is analyzed by the simulation and experimental methods.

  8. Self-organized TiO2 nanotubular arrays for photoelectrochemical hydrogen generation: effect of crystallization and defect structures

    Science.gov (United States)

    Mahajan, V. K.; Misra, M.; Raja, K. S.; Mohapatra, S. K.

    2008-06-01

    The effect of crystallization and surface chemistry of nanotubular titanium dioxide (TiO2) in connection with the photoelectrochemical process is reported in this investigation. TiO2 nanotubular arrays were synthesized by a simple anodization process in an acidified fluoride electrolyte at room temperature. The TiO2 nanotubes were amorphous in as-anodized condition; their transformation to crystalline phases was a function of annealing temperature and gaseous environment. The anatase phase was observed predominantly after annealing in non-oxidizing atmospheres, whereas annealing in an oxygen environment showed a mixture of anatase and rutile phases. X-ray photoelectron spectroscopy was used to determine the chemical environment of the surface, which revealed the presence of phosphate, oxygen vacancies and pentacoordinated Ti in hydrogen annealed samples. Diffuse reflectance photospectrometry of non-oxygen annealed samples showed long absorption tails extending in the visible region. The photoelectrochemical response of the TiO2 nanotubes annealed in different conditions was investigated. Photoelectrochemical performance under simulated solar light was improved by annealing the nanotubular TiO2 samples in non-oxidizing environment.

  9. Self-organized TiO{sub 2} nanotubular arrays for photoelectrochemical hydrogen generation: effect of crystallization and defect structures

    Energy Technology Data Exchange (ETDEWEB)

    Mahajan, V K; Misra, M; Raja, K S; Mohapatra, S K [Center for Materials Reliability, Chemical and Metallurgical Engineering, University of Nevada, Reno, NV 89557 (United States)], E-mail: misra@unr.edu

    2008-06-21

    The effect of crystallization and surface chemistry of nanotubular titanium dioxide (TiO{sub 2}) in connection with the photoelectrochemical process is reported in this investigation. TiO{sub 2} nanotubular arrays were synthesized by a simple anodization process in an acidified fluoride electrolyte at room temperature. The TiO{sub 2} nanotubes were amorphous in as-anodized condition; their transformation to crystalline phases was a function of annealing temperature and gaseous environment. The anatase phase was observed predominantly after annealing in non-oxidizing atmospheres, whereas annealing in an oxygen environment showed a mixture of anatase and rutile phases. X-ray photoelectron spectroscopy was used to determine the chemical environment of the surface, which revealed the presence of phosphate, oxygen vacancies and pentacoordinated Ti in hydrogen annealed samples. Diffuse reflectance photospectrometry of non-oxygen annealed samples showed long absorption tails extending in the visible region. The photoelectrochemical response of the TiO{sub 2} nanotubes annealed in different conditions was investigated. Photoelectrochemical performance under simulated solar light was improved by annealing the nanotubular TiO{sub 2} samples in non-oxidizing environment.

  10. Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes.

    Science.gov (United States)

    Scheuermann, Andrew G; Lawrence, John P; Meng, Andrew C; Tang, Kechao; Hendricks, Olivia L; Chidsey, Christopher E D; McIntyre, Paul C

    2016-06-15

    Atomic layer deposited (ALD) TiO2 protection layers may allow for the development of both highly efficient and stable photoanodes for solar fuel synthesis; however, the very different conductivities and photovoltages reported for TiO2-protected silicon anodes prepared using similar ALD conditions indicate that mechanisms that set these key properties are, as yet, poorly understood. In this report, we study hydrogen-containing annealing treatments and find that postcatalyst-deposition anneals at intermediate temperatures reproducibly yield decreased oxide/silicon interface trap densities and high photovoltage. A previously reported insulator thickness-dependent photovoltage loss in metal-insulator-semiconductor Schottky junction photoanodes is suppressed. This occurs simultaneously with TiO2 crystallization and an increase in its dielectric constant. At small insulator thickness, a record for a Schottky junction photoanode of 623 mV photovoltage is achieved, yielding a photocurrent turn-on at 0.92 V vs NHE or -0.303 V with respect to the thermodynamic potential for water oxidation.

  11. First-principles calculations of optical properties of perfect and defective MgO crystals at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    He, L., E-mail: linhe63@yahoo.com.cn [College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068 (China); Tang, M.J. [College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068 (China); Zeng, M.F. [Department of Fundamental Education, Chengdu Vocational and Technical College, Chengdu 610041 (China); Zhou, X.M.; Zhu, W.J. [National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900 (China); Liu, F.S. [Institute of High-pressure Physics, Southwest Jiaotong University, Chengdu 610031 (China)

    2013-02-01

    The optical-absorption and refractive-index properties of MgO crystal without and with doubly charged Mg and O vacancies (V{sub Mg}{sup -2} and V{sub O}{sup +2}) up to 100 GPa were calculated using the first-principles method. The obtained data were mainly used to explore origins of the observed optical-transparency loss and behaviors of the refractive-index change for MgO under relatively strong shock compression. Results show that the V{sub O}{sup +2}-induced heterogeneous absorption within {approx}300-700 nm should be a source causing the transparency loss. It is found that the refractive index of perfect MgO at 532 nm increases with shock pressure. The V{sub O}{sup +2} leads to a rise in refractive index, and the increment increases with shock pressure. If the vacancy concentration increases with shock pressure, effects of the V{sub O}{sup +2} on refractive index are enhanced further.

  12. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A.E., E-mail: bolotnik@bnl.gov [Brookhaven National Laboratory, Upton, NY 11793 (United States); Camarda, G.S.; Cui, Y.; De Geronimo, G. [Brookhaven National Laboratory, Upton, NY 11793 (United States); Eger, J.; Emerick, A. [eV Products Inc., Saxonburg, PA 16056 (United States); Fried, J.; Hossain, A.; Roy, U.; Salwen, C. [Brookhaven National Laboratory, Upton, NY 11793 (United States); Soldner, S. [eV Products Inc., Saxonburg, PA 16056 (United States); Vernon, E.; Yang, G.; James, R.B. [Brookhaven National Laboratory, Upton, NY 11793 (United States)

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm{sup 3} pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices. - Highlights: • We investigated performances of 3D position sensitive CdZnTe pixelated detectors. • We employed the readout electronics based on H3D ASIC and data processing. • We demonstrated the feasibility of correcting response nonuniformities in CdZnTe pixelated detectors.

  13. Zeolite Crystal Growth (ZCG) Flight on USML-2

    Science.gov (United States)

    Sacco, Albert, Jr.; Bac, Nurcan; Warzywoda, Juliusz; Guray, Ipek; Marceau, Michelle; Sacco, Teran L.; Whalen, Leah M.

    1997-01-01

    The extensive use of zeolites and their impact on the world's economy has resulted in many efforts to characterize their structure, and improve the knowledge base for nucleation and growth of these crystals. The zeolite crystal growth (ZCG) experiment on USML-2 aimed to enhance the understanding of nucleation and growth of zeolite crystals, while attempting to provide a means of controlling the defect concentration in microgravity. Zeolites A, X, Beta, and Silicalite were grown during the 16 day - USML-2 mission. The solutions where the nucleation event was controlled yielded larger and more uniform crystals of better morphology and purity than their terrestrial/control counterparts. The external surfaces of zeolite A, X, and Silicalite crystals grown in microgravity were smoother (lower surface roughness) than their terrestrial controls. Catalytic studies with zeolite Beta indicate that crystals grown in space exhibit a lower number of Lewis acid sites located in micropores. This suggests fewer structural defects for crystals grown in microgravity. Transmission electron micrographs (TEM) of zeolite Beta crystals also show that crystals grown in microgravity were free of line defects while terrestrial/controls had substantial defects.

  14. Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions

    Science.gov (United States)

    Tardío, M.; Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J. E.; Alves, E.

    2016-07-01

    The electrical conductivity in α-Al2O3 single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 1015, 5 × 1015 and 5 × 1016 ions/cm2. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I-V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

  15. Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al{sub 2}O{sub 3} single crystal implanted with Mg ions

    Energy Technology Data Exchange (ETDEWEB)

    Tardío, M., E-mail: mtardio@fis.uc3m.es [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III, Avda. de la Universidad, 30, 28911 Leganés (Madrid) (Spain); Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J.E. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III, Avda. de la Universidad, 30, 28911 Leganés (Madrid) (Spain); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela (Portugal)

    2016-07-15

    The electrical conductivity in α-Al{sub 2}O{sub 3} single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 10{sup 15}, 5 × 10{sup 15} and 5 × 10{sup 16} ions/cm{sup 2}. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I–V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

  16. A study of the interaction between irradiation induced-defect and a line dislocation in bcc-iron

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Satoshi [Department of Quantum Engineering and Systems Science, Graduate School of Engineering, The University of Tokyo, Tokyo (Japan)], E-mail: fujita@n.t.u-tokyo.ac.jp; Okita, Taira; Kuramoto, Eiichi; Sekimura, Naoto [Department of Nuclear Engineering and Management, Graduate School of Engineering, The University of Tokyo, Tokyo (Japan)

    2009-04-30

    We evaluate the interaction between a line edge dislocation and a self-interstitial atom cluster in {alpha}-iron by the molecular dynamics (MD) calculation. When the distance between the slip plane of the dislocation and the cluster centroid is more than twice as large as the cluster radius and the distance between the slip plane and the nearest part of the cluster is more than 1 nm, the results obtained by MD simulation agree well with that by the dislocation theory. The calculation temperature does not affect the stable position of the cluster near the dislocation. We discuss the difference in MD and the dislocation theory and the limitation of the infinitesimal small cluster approximation.

  17. Defect structure in proton-irradiated copper and nickel

    Energy Technology Data Exchange (ETDEWEB)

    Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

    1987-12-01

    This single crystals of copper or nickel with a thickness of about 10 ..mu..m are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several ..mu..m in size, are alingned parallel to the /001/ plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.).

  18. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  19. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  20. Crystal Structure of Crataeva tapia Bark Protein (CrataBL and Its Effect in Human Prostate Cancer Cell Lines.

    Directory of Open Access Journals (Sweden)

    Rodrigo da Silva Ferreira

    Full Text Available A protein isolated from the bark of Crataeva tapia (CrataBL is both a Kunitz-type plant protease inhibitor and a lectin. We have determined the amino acid sequence and three-dimensional structure of CrataBL, as well as characterized its selected biochemical and biological properties. We found two different isoforms of CrataBL isolated from the original source, differing in positions 31 (Pro/Leu; 92 (Ser/Leu; 93 (Ile/Thr; 95 (Arg/Gly and 97 (Leu/Ser. CrataBL showed relatively weak inhibitory activity against trypsin (Kiapp = 43 µM and was more potent against Factor Xa (Kiapp = 8.6 µM, but was not active against a number of other proteases. We have confirmed that CrataBL contains two glycosylation sites and forms a dimer at high concentration. The high-resolution crystal structures of two different crystal forms of isoform II verified the β-trefoil fold of CrataBL and have shown the presence of dimers consisting of two almost identical molecules making extensive contacts (∼645 Å(2. The structure differs from those of the most closely related proteins by the lack of the N-terminal β-hairpin. In experiments aimed at investigating the biological properties of CrataBL, we have shown that addition of 40 µM of the protein for 48 h caused maximum growth inhibition in MTT assay (47% of DU145 cells and 43% of PC3 cells. The apoptosis of DU145 and PC3 cell lines was confirmed by flow cytometry using Annexin V/FITC and propidium iodide staining. Treatment with CrataBL resulted in the release of mitochondrial cytochrome c and in the activation of caspase-3 in DU145 and PC3 cells.

  1. Crystal structure, short-range oxygen defects, and water adsorption in La- and Nd-modified ZrO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Loong, C.K.; Richardson, J.W. Jr.; Iton, L.E. [Argonne National Lab., IL (United States); Ozawa, M. [Nagoya Institute of Technology, Gifu (Japan)

    1995-02-01

    Doping Rare-earth (RE) elements to ZrO{sub 2} helps stabilize the cubic and tetragonal phases and improves resistance to thermal shock and sintering at high temperatures. Since a RE ion has a lower valency (3{sup +}) than Zr ion (4{sup +}), oxygen vacancies are formed to preserve electroneutrality. We have studied the crystal structure of La{sub 0.1}Zr{sub 0.9}O{sub 1.95} and Nd{sub 0.1}Zr{sub 0.9}O{sub 1.95} by neutron diffraction and examined the associated oxygen defects by a Fourier transform of the filtered residual diffuse scattering. The hydration process was investigated by inelastic neutron-scattering measurements of the hydrogen vibrational density of states of the surface hydroxyl groups and physisorbed water on these fine powders. We compare the O-H stretch vibrations for samples from with only surface hydroxyl groups to multilayer coverage of water molecules. The decreasing energies and increasing widths of the O-H stretch bands with increasing H{sub 2}O coverage indicate the influence of hydrogen bonding on the motion of water molecules. Similar elastic and inelastic experiments were also performed on a high surface-area pure ZrO{sub 2} powder.

  2. Drosophila lines with mutant and wild type human TDP-43 replacing the endogenous gene reveals phosphorylation and ubiquitination in mutant lines in the absence of viability or lifespan defects.

    Science.gov (United States)

    Chang, Jer-Cherng; Morton, David B

    2017-01-01

    Mutations in TDP-43 are associated with proteinaceous inclusions in neurons and are believed to be causative in neurodegenerative diseases such as frontotemporal dementia or amyotrophic lateral sclerosis. Here we describe a Drosophila system where we have engineered the genome to replace the endogenous TDP-43 orthologue with wild type or mutant human TDP-43(hTDP-43). In contrast to other models, these flies express both mutant and wild type hTDP-43 at similar levels to those of the endogenous gene and importantly, no age-related TDP-43 accumulation observed among all the transgenic fly lines. Immunoprecipitation of TDP-43 showed that flies with hTDP-43 mutations had increased levels of ubiquitination and phosphorylation of the hTDP-43 protein. Furthermore, histologically, flies expressing hTDP-43 M337V showed global, robust neuronal staining for phospho-TDP. All three lines: wild type hTDP-43, -G294A and -M337V were homozygous viable, with no defects in development, life span or behaviors observed. The primary behavioral defect was that flies expressing either hTDP-43 G294A or M337V showed a faster decline with age in negative geotaxis. Together, these observations implied that neurons could handle these TDP-43 mutations by phosphorylation- and ubiquitin-dependent proteasome systems, even in a background without the wild type TDP-43. Our findings suggest that these two specific TDP-43 mutations are not inherently toxic, but may require additional environmental or genetic factors to affect longevity or survival.

  3. Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure

    Science.gov (United States)

    Tatsumi, Natsuo; Tamasaku, Kenji; Ito, Toshimichi; Sumiya, Hitoshi

    2017-01-01

    The behavior of dislocation lines (DLs) and stacking faults (SFs) in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure has been investigated. After annealing the diamond at 1500 °C for 60 min in pure N2 atmosphere, straight DLs were bent to converge to fewer curved dislocation bundles, so that some of the stacking faults were extinct while new DLs appeared at the edges of the removed SFs. These results indicate that SFs in the diamond examined belong to the Shockley type, and that the Shockley partials changed to a perfect dislocation. From this result, the following generation mechanism has been proposed for SFs in diamond. On one hand, because [112] dislocations in the (111) growth sector are contained in the slip plane labelled as (1 ̅ 1 ̅ 1), one perfect dislocation tends to be split into two Shockley partials and a SF when an appropriate stress is applied. On the other hand, the angle between the {111} slip plane and the direction of bundled dislocations in the (001) growth sector is as high as 54.7°, so that a perfect dislocation can hardly slip into partial dislocations. Thus, SFs exist only in the (111) growth sector of type IIa diamond.

  4. Industrial application of ultrasound based in-line rheometry: Visualization of steady shear pipe flow of chocolate suspension in pre-crystallization process

    Science.gov (United States)

    Ouriev, Boris; Windhab, Erich; Braun, Peter; Zeng, Yuantong; Birkhofer, Beat

    2003-12-01

    In the present work an in-line ultrasonic method for investigation of the rheological flow behavior of concentrated suspensions was created. It is based on a nondestructive rheological measuring technique for pilot plant and industrial scale applications. Elsewhere the author discusses a tremendous need for in-line rheological characterization of highly concentrated suspensions exposed to pressure driven shear flow conditions. Most existing on-line methods are based on destructive macro actuators, which are not suitable for materials with sensitive to applied deformation structure. Since the process of our basic interest influences the structure of suspension it would be difficult to separate the effects of rheometric measurement and weakly pronounced structural changes arising from a fine adjustment of the process parameters. The magnitude of these effects is usually associated with the complex flow dynamics of structured liquids and is sensitive to density or temperature fluctuations around the moving rheometric actuator. Interpretation of the results of such measurements can be hindered by process parameter influences on liquid product structure. Therefore, the author introduces an in-line noninvasive rheometric method, which is implemented in a pre-crystallization process of chocolate suspension. Use of ultrasound velocity profile pressure difference (UVP-PD) technique enabled process monitoring of the chocolate pre-crystallization process. Influence of seeded crystals on Rheology of chocolate suspension was recorded and monitored on line. It was shown that even slight velocity pulsations in chocolate mainstream can strongly influence rheological properties besides influencing flow velocity profiles. Based on calculations of power law fit in raw velocity profiles and calculation of wall shear stress from pressure difference measurement, a viscosity function was calculated and monitored on line. On-line results were found to be in a good agreement with off-line

  5. X-ray diffraction line profile analysis for defect study in Zr–2.5% Nb material

    Indian Academy of Sciences (India)

    K Kapoor; D Lahiri; S V R Rao; T Sanyal; B P Kashyap

    2004-02-01

    The microstructure characterization by X-ray line profile analysis is possible for determination of dislocation density, micro-strain within grains due to dislocation and average coherent domain size (subgrain) within the grain. This study presents the X-ray diffraction peaks shape analysis and their broadening with different thermal treatments in Zr–2.5% Nb pressure tube material. The peak shape is analysed using Fourier transformation and information about coherent domain size, micro-strain and dislocation density could be obtained from the Fourier coefficients of the peak. Analysis of broadening of the peaks by integral breadth method also gives the coherent domain size, dislocation density and micro-strain present in the material. The results from the X-ray techniques are comparable to those obtained from direct observation of transmission electron microscopy. The measured yield strength increases with dislocation density. An empirical relationship is obtained for the yield strength from the dislocation density of the material. The measured strength is in agreement with the one calculated from dislocation density.

  6. Identification of symmetry, structure and defects of dopant Mn(II) ions in Zn(C 3H 3O 4) 2(H 2O) 2 by single crystal EPR technique

    Science.gov (United States)

    Natarajan, B.; Mithira, S.; Sambasiva Rao, P.

    2008-12-01

    In order to understand the symmetry, structure and defects of Mn(II) impurity incorporated in diaquabis[malonato(1-)-κ 2O,O'] zinc(II), single crystal EPR studies have been carried out at X-band frequencies at room temperature. Angular variation in the three orthogonal planes shows the presence of two defects, having a relatively large and small zero-field splitting parameter ( D), with orthorhombic symmetry. The spin-Hamiltonian parameters, estimated from the three mutually orthogonal crystal rotations, are: Defect I:g xx = 1.959, g yy = 1.998, g zz = 2.011; A xx = -8.73, A yy = -8.55, A zz = -9.10 mT; D xx = 5.58, D yy = 1.33, D zz = -6.91 mT. Defect II:g xx = 2.015, g yy = 1.996, g zz = 2.004; A xx = -8.18, A yy = -8.00, A zz = -8.58 mT; D xx = 33.48, D yy = 6.92, D zz = -40.40 mT. The observed large zero-field tensor for Defect II is due to the steric effects caused by the two malonate rings. The location of the two interstitial defects has been determined from the X-ray data of the host lattice. The powder EPR spectrum also confirms the chemical inequivalence of the two defects. The optical absorption spectrum shows the characteristic of Mn(II) ions in distorted octahedral symmetry.

  7. Topological Structure of Disclination Lines in 2-Dimensional Liquid Crystals%2维液晶中向错线的拓扑结构

    Institute of Scientific and Technical Information of China (English)

    张慧; 杨国宏

    2002-01-01

    Using φ-mapping method and topological current theory, the topological structure of disclination lines in 2-dimensional liquid crystals is studied. By introducing the strength density and the topological current of many disclination lines, it is pointed out that the disclination lines are determined by the singulaities of the director field, and topologically quantizedby the Hopf indices and Brouwer degrees. Due to the equivalence in physics of the director fields n (x) and -n (x), the Hopf indices can be integers or half-integers,representing a generalization of our previous studies of integer Hopf indices.

  8. X-Ray Diffraction and Imaging Study of Imperfections of Crystallized Lysozyme with Coherent X-Rays

    Science.gov (United States)

    Hu, Zheng-Wei; Chu, Y. S.; Lai, B.; Cai, Z.; Thomas, B. R.; Chernov, A. A.

    2003-01-01

    Phase-sensitive x-ray diffraction imaging and high angular-resolution diffraction combined with phase contrast radiographic imaging are employed to characterize defects and perfection of a uniformly grown tetragonal lysozyme crystal in symmetric Laue case. The fill width at half-maximum (FWHM) of a 4 4 0 rocking curve measured from the original crystal is approximately 16.7 arcseconds, and defects, which include point defects, line defects, and microscopic domains, have been clearly observed in the diffraction images of the crystal. The observed line defects carry distinct dislocation features running approximately along the growth front, and they have been found to originate mostly at a central growth area and occasionally at outer growth regions. Individual point defects trapped at a crystal nucleus are resolved in the images of high sensitivity to defects. Slow dehydration has led to the broadening of the 4 4 0 rocking curve by a factor of approximately 2.4. A significant change of the defect structure and configuration with drying has been revealed, which suggests the dehydration induced migration and evolution of dislocations and lattice rearrangements to reduce overall strain energy. The sufficient details of the observed defects shed light upon perfection, nucleation and growth, and properties of protein crystals.

  9. Wetting on smooth micropatterned defects

    OpenAIRE

    Debuisson, Damien; Dufour, Renaud; Senez, Vincent; Arscott, Steve

    2011-01-01

    We develop a model which predicts the contact angle hysteresis introduced by smooth micropatterned defects. The defects are modeled by a smooth function and the contact angle hysteresis is explained using a tangent line solution. When the liquid micro-meniscus touches both sides of the defect simultaneously, depinning of the contact line occurs. The defects are fabricated using a photoresist and experimental results confirm the model. An important point is that the model is scale-independent,...

  10. Investigation of lactose crystallization process during condensed milk cooling using native vacuum-crystallizer

    Directory of Open Access Journals (Sweden)

    E. I. Dobriyan

    2016-01-01

    Full Text Available One of the most general defects of condensed milk with sugar is its consistency heterogeneity – “candying”. The mentioned defect is conditioned by the presence of lactose big crystals in the product. Lactose crystals size up to 10 µm is not organoleptically felt. The bigger crystals impart heterogeneity to the consistency which can be evaluated as “floury”, “sandy”, “crunch on tooth”. Big crystals form crystalline deposit on the can or industrial package bottom in the form of thick layer. Industrial processing of the product with the defective process of crystallization results in the expensive equipment damage of the equipment at the confectionary plant accompanied with heavy losses. One of the factors influencing significantly lactose crystallization is the product cooling rate. Vacuum cooling is the necessary condition for provision of the product consistency homogeneity. For this purpose the vacuum crystallizers of “Vigand” company, Germany, are used. But their production in the last years has been stopped. All-Russian dairy research institute has developed “The references for development of the native vacuum crystallizer” according to which the industrial model has been manufactured. The produced vacuum – crystallizer test on the line for condensed milk with sugar production showed that the product cooling on the native vacuum-crystallizer guarantees production of the finished product with microstructure meeting the requirements of State standard 53436–2009 “Canned Milk. Milk and condensed cream with sugar”. The carried out investigations evidences that the average lactose crystals size in the condensed milk with sugar cooled at the native crystallizer makes up 6,78 µm. The granulometric composition of the product crystalline phase cooled at the newly developed vacuum-crystallizer is completely identical to granulometric composition of the product cooled at “Vigand” vacuum-crystallizer.

  11. Vibrational line shapes in the amalgamated limit: (para-D2)x(ortho-D2)1-x mixed crystals

    Science.gov (United States)

    de Kinder, J.; Bouwen, A.; Schoemaker, D.; Boukahil, A.; Huber, D. L.

    1994-05-01

    The D2 vibrons have been studied by high-resolution Raman scattering in mixed crystals of (p-D2)x(o-D2)1-x. The o-D2 and p-D2 vibrational transitions are found to overlap. Line shapes calculated by the coherent potential approximation are in good qualitative agreement with the experimental data. The linewidth of the o-D2 transition is much larger than the linewidth of the p-H2 transition in (o-H2)x(p-H2)1-x mixed crystals with comparable J=1 concentrations. Possible explanations for this difference are discussed.

  12. The defect mode and the quantum effect of light wave in cylindrical anisotropic photonic crystal%各向异性圆柱掺杂光子晶体的缺陷模及其量子效应

    Institute of Scientific and Technical Information of China (English)

    刘启能

    2011-01-01

    The quantum effect of light wave mode is studied under restriction condition of light wave in 1-D cylindrical anisotropic doped photonic crystal. The defect mode character of TE wave and TM wave are calculated by characteristic matrix method . New defect mode structure of 1-D cylindrical anisotropic doping photonic crystal was obtained. The defect mode frequency and transmission angle increases with increasing quantum number. The defect mode frequency of the same pattern decreases with increasing cylinder radius.%利用光波在一维各向异性圆柱掺杂光子晶体中径向受限的条件,研究了光波在其中出现的模式量子效应,并利用特征矩阵法计算了TE波和TM波各模式的缺陷模的变化规律,得出了一些一维各向异性圆柱光子晶体缺陷模的新结构.缺陷模的频率和透射角都随模式量子数的增加而增大.同一模式缺陷模的频率随圆柱半径的增加而减小.

  13. Modelling of Active Semiconductor Photonic Crystal Waveguides and Robust Designs based on Topology Optimization

    DEFF Research Database (Denmark)

    Chen, Yaohui; Wang, Fengwen; Ek, Sara;

    2011-01-01

    In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on propagation effects and local carrier dynamics are investigated in the framework...... of the Lorentz reciprocity theorem. We highlight topology optimization as a systematic and robust design methodology considering manufacturing imperfections in optimizing active photonic crystal device performances, and compare the performance of standard photonic crystal waveguides with optimized structures....

  14. 声子晶体材料的吸收对弹性波缺陷模的影响%Effect of absorption of impurity-doped 1D phontonic crystal on its elastic wave defect mode

    Institute of Scientific and Technical Information of China (English)

    代洪霞; 刘启能

    2009-01-01

    For studying the influence absorption of a 1D photonic crystal on its defect mode,a complex wave number is adopted, the transfer matrix of the impurity-doped 1D photonic crystal is inferred, and the influence of attenuation coefficient and the period number on the defect mode is calculated. When the period number is specified, the attenuation coefficient has obvious influence on the defect mode in the transmission wave and the reflection wave; the peak value of the defect mode decrease quickly while the FWHM of the defect mode increases with increase of attenuation coefficient increment. When the attenuation coefficient is specified, loth the peak value and the FWHM of the defect mode lower quickly with increase of the period number.%为了研究声子晶体材料的吸收对缺陷模的影响,引入复波数,推导出一维掺杂声子晶体的转移矩阵,计算了衰减系数和周期数埘透射波和反射波中缺陷模的影响.得出:当周期数一定时,衰减系数对一维掺杂声子晶体的透射波和反射波中的缺陷模都有显著的影响,缺陷模的峰值随衰减系数的增加而迅速减小,缺陷模的宽度随衰减系数的增加而增大.当衰减系数一定时,缺陷模的峰值和宽度都随周期数的增加而迅速减小.

  15. Radiation-induced defects in LiAlO{sub 2} crystals: Holes trapped by lithium vacancies and their role in thermoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Holston, M.S.; McClory, J.W.; Giles, N.C. [Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433 (United States); Halliburton, L.E., E-mail: Larry.Halliburton@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506 (United States)

    2015-04-15

    Electron paramagnetic resonance (EPR) is used to identify the primary hole trap in undoped lithium aluminate (LiAlO{sub 2}) crystals. Our interest in this material arises because it is a candidate for radiation detection applications involving either optically stimulated luminescence (OSL) or thermoluminescence (TL). During an x-ray irradiation at room temperature, holes are trapped at oxygen ions adjacent to lithium vacancies. Large concentrations of these lithium vacancies are introduced into the crystal during growth. With the magnetic field along the [001] direction, the EPR spectrum from these trapped-hole centers consists of eleven lines, evenly spaced but with varying intensities, caused by nearly equal hyperfine interactions with two {sup 27}Al nuclei (I=5/2, 100% abundant). The g matrix is determined from the angular dependence of the EPR spectrum and has principal values of 2.0130, 2.0675, and 2.0015. These g shifts strongly support the model of a hole in a p orbital on an oxygen ion. The adjacent lithium vacancy stabilizes the hole on the oxygen ion. A sequence of pulsed thermal anneals above room temperature shows that the EPR spectrum from the holes trapped adjacent to the lithium vacancies disappears in the 90–120 °C range. The thermal decay of these hole centers directly correlates with an intense TL peak near 105 °C. Signals at lower magnetic field in the 9.4 GHz EPR spectra suggest that the electron trap associated with this TL peak at 105 °C may be a transition-metal-ion impurity, most likely Fe, located at a cation site. Additional less intense TL peaks are observed near 138, 176, and 278 °C. - Highlights: • Undoped LiAlO{sub 2} crystals are irradiated at room temperature with x-rays. • EPR is used to identify holes trapped at oxygen ions adjacent to lithium vacancies. • Thermal decay of the EPR spectrum correlates with an intense TL peak at 105 °C.

  16. Nanoscale coherent intergrowthlike defects in a crystal of La1.9Ca1.1Cu2O6 +δ made superconducting by high-pressure oxygen annealing

    Science.gov (United States)

    Hu, Hefei; Zhu, Yimei; Shi, Xiaoya; Li, Qiang; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Tranquada, John M.; Billinge, Simon J. L.

    2014-10-01

    Superconductivity with Tc=53.5 K has been induced in a large La1.9Ca1.1Cu2O6 (La-2126) single crystal by annealing in a high partial pressure of oxygen at 1200 °C. Using transmission electron microscopy techniques, we show that a secondary Ca-doped La2CuO4 (La-214) phase, not present in the as-grown crystal, appears as a coherent intergrowthlike defect as a consequence of the annealing. A corresponding secondary superconducting transition near 13 K is evident in the magnetization measurement. Electron energy-loss spectroscopy reveals a pre-edge peak at the O-K edge in the superconducting La-2126 phase, which is absent in the as-grown crystal, confirming the hole doping by interstitial oxygen.

  17. Enhancement of the Zero Phonon Line emission from a Single NV-Center in a Nanodiamond via Coupling to a Photonic Crystal Cavity

    CERN Document Server

    Wolters, Janik; Kewes, Güter; Nüsse, Nils; Schoengen, Max; Döscher, Henning; Hannappel, Thomas; öhel, Bernd L; Barth, Michael; Benson, Oliver

    2010-01-01

    Using a nanomanipulation technique a nanodiamond with a single nitrogen vacancy center is placed directly on the surface of a gallium phosphide photonic crystal cavity. A Purcell-enhancement of the fluorescence emission at the zero phonon line (ZPL) by a factor of 12.1 is observed. The ZPL coupling is a first crucial step towards future diamond-based integrated quantum optical devices.

  18. Design of a Photonic-Crystal Channel-Drop Filter Based on the Two-Dimensional Triangular-Lattice Hole Structure

    Institute of Scientific and Technical Information of China (English)

    Kyu; Hwan; Hwang; G.; Hugh; Song; Chanmook; Lim; Soan; Kim; Kyung-Won; Chun; Mahn; Yong; Park

    2003-01-01

    A channel-drop filter has been designed based on the two-dimensional triangular-lattice hole photonic-crystal structure, which consists of two line defects and two point defects, by a two-dimensional finite-difference time-domain simulation.

  19. Wetting on smooth micropatterned defects

    CERN Document Server

    Debuisson, Damien; Senez, Vincent; Arscott, Steve

    2011-01-01

    We develop a model which predicts the contact angle hysteresis introduced by smooth micropatterned defects. The defects are modeled by a smooth function and the contact angle hysteresis is explained using a tangent line solution. When the liquid micro-meniscus touches both sides of the defect simultaneously, depinning of the contact line occurs. The defects are fabricated using a photoresist and experimental results confirm the model. An important point is that the model is scale-independent, i.e. the contact angle hysteresis is dependent on the aspect ratio of the function, not on its absolute size; this could have implications for natural surface defects.

  20. Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2012-01-01

    In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

  1. Birth Defects

    Science.gov (United States)

    A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

  2. Ultrasonic characterization of lactose crystallization in gelatin gels.

    Science.gov (United States)

    Yucel, Umut; Coupland, John N

    2011-01-01

    Ultrasonic velocity and attenuation measurements (2.25 MHz center frequency) were used to follow bulk crystallization of lactose (43% and 46%) from gelatin (1.5% and 3%) gels at 25 °C, and compared to turbidity (500 nm) and isothermal calorimetric measurements. Ultrasonic velocity decreased slightly (approximately 0.5%) during crystallization while ultrasonic attenuation was low in the absence of lactose crystals and increased progressively during crystallization. The lag time before the onset of crystallization decreased and the maximum rate of increase in attenuation during crystallization increased with increasing lactose supersaturation but was not affected by gelatin concentration (P crystallization kinetics in complex food matrices and to be applied on-line. Practical Application: Many foods contain crystals that affect their taste and texture (for example, lactose crystals can give a grainy defect in ice cream). The formation of crystals is often hard to predict so methods to measure the development of crystals inside real foods are useful. In this study, we show that as lactose crystallizes in a gelatin gel the ultrasonic attenuation--capacity to absorb sound--increases and can be related to the amount of crystals present. Ultrasound is easier to apply in real food processing than the existing methodologies.

  3. 带有KTP缺陷的2维光子晶体设计与能带特性%Design and characteristics of two-dimensional photonic crystal with KTP defect

    Institute of Scientific and Technical Information of China (English)

    李志全; 刘正君

    2011-01-01

    设计了一种通过改变缺陷介质折射率实现能带特性改变的可调谐2维光子晶体激光器微腔,在光子晶体中引入点缺陷磷酸氧钛钾(KTP),在KTP两端施加交流电场控制KTP晶体折射率变化.实验过程中观察到了正方排列的光子晶体随着KTP晶体折射率逐渐增大,晶体禁带数量减少,且向归一化频率小的方向移动,禁带宽度基本不变;而三角排列的晶格能带随着KTP折射率增大,禁带逐渐变窄,且有向低频方向移动的趋势.用平面波展开法分析了晶体的能带结构,得到理上的描述.%The plane wave expansion method is applied to simulate the band gap of a tunable two-dimensional photonic crystal micro cavity based on controlling the refractive index of defect medium. KTiOPO4 (KTP) crystal is introduced to the planar photonic crystal as point defect, with its refractive index controlled by alternating current according to electro-optic effect. Numerical calculations and experimental results show that, with the refractive index of KTP increasing, the normalized frequencies of defect modes shift downward. The number of band gaps of the square lattice reduces, and the band gap of the triangle lattice narrows.

  4. A new dual-frequency liquid crystal lens with ring-and-pie electrodes and a driving scheme to prevent disclination lines and improve recovery time.

    Science.gov (United States)

    Kao, Yung-Yuan; Chao, Paul C-P

    2011-01-01

    A new liquid crystal lens design is proposed to improve the recovery time with a ring-and-pie electrode pattern through a suitable driving scheme and using dual-frequency liquid crystals (DFLC) MLC-2048. Compared with the conventional single hole-type liquid crystal lens, this new structure of the DFLC lens is composed of only two ITO glasses, one of which is designed with the ring-and-pie pattern. For this device, one can control the orientation of liquid crystal directors via a three-stage switching procedure on the particularly-designed ring-and-pie electrode pattern. This aims to eliminate the disclination lines, and using different drive frequencies to reduce the recovery time to be less than 5 seconds. The proposed DFLC lens is shown effective in reducing recovery time, and then serves well as a potential device in places of the conventional lenses with fixed focus lengths and the conventional LC lens with a single circular-hole electrode pattern.

  5. Level-crossing spectroscopy of nitrogen-vacancy centers in diamond: sensitive detection of paramagnetic defect centers

    CERN Document Server

    Anishchik, S V; Ivanov, K L

    2016-01-01

    We report a magnetic field dependence of fluorescence of diamond single crystals containing NV$^-$ centers. In such spectra, numerous sharp lines are found, which correspond to Level Anti-Crossings (LACs) in coupled spins systems comprising an NV$^-$ center. Theoretical modeling of such "LAC-spectra" enables characterization of paramagnetic defect centers and determination of their magnetic resonance parameters, such as zero-field splitting and hyperfine coupling constants. The outlined method thus enables sensitive detection of paramagnetic impurities in diamond crystals.

  6. Two-Dimentional Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Søndergaard, Thomas; Dridi, Kim

    1999-01-01

    possible a novel class of optical microcavities, whereas line defects make possible a novel class of waveguides. In this paper we will analyze two-dimensional photonic crystal waveguides based on photonic crystals with rods arranged on a triangular and a square lattice using a plane-wave expansion method...... and a finite-difference-time-domain (FDTD) method. Design parameters, i.e. dielectric constants, rod diameter and waveguide width, where these waveguides are single-moded and multi-moded will be given. We will also show our recent results regarding the energy-flow (the Poynting vector) in these waveguides...

  7. Two-Dimentional Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Søndergaard, Thomas; Dridi, Kim

    1999-01-01

    possible a novel class of optical microcavities, whereas line defects make possible a novel class of waveguides. In this paper we will analyze two-dimensional photonic crystal waveguides based on photonic crystals with rods arranged on a triangular and a square lattice using a plane-wave expansion method......In the recent years a new class of periodic high-index contrast dielectric structures, known as photonic bandgap structures, has been discovered. In these structures frequency intervals, known as photonic bandgaps, where propagation of electromagnetic waves is not allowed, exist due to the periodic...

  8. Bridgman Growth and Platinum-related Defects of Bi12SiO20 Crystals%Bi12SiO20晶体下降法生长及Pt包裹缺陷研究

    Institute of Scientific and Technical Information of China (English)

    张爱琼; 徐家跃; 范世(马岂)

    2004-01-01

    采用改进的坩埚下降法成功生长了硅酸铋Bi12SiO20(BSO) 单晶,探讨了工艺参数对晶体生长的影响. 用电子探针方法研究了硅酸铋晶体中的铂金包裹体及其相关缺陷. 铂金包裹物的尺寸一般在30 μm~5 mm之间. 包裹物经常导致晶体开裂,使成品率大为降低. 铂坩埚中的杂质是导致坩埚受侵蚀的主要原因,通过延长铂坩埚熔炼时间和适当降低晶体生长炉温,可明显减少铂包裹体及其相关缺陷. 通过优化生长工艺,获得了尺寸为50 mm×35 mm×35 mm的优质BSO单晶.%Bismuth silicon oxide Bi12SiO20(BSO) single crystals were grown by the modified vertical Bridgman method. The growth conditions were discussed and the platinum-related defects were investigated by means of Electron Probe Micro Analysis (EPMA). Pt inclusions with a dimension of 30 μm~5 mm were observed in as-grown BSO crystals. The inclusions usually coexisted with cracking, which caused low yield of BSO crystals. The Pt-related inclusions were attributed to the impurities in Pt crucible. Two approaches were employed to reduce Pt-related defects: prolonging melting time during purifying Pt crucible and lowering the furnace temperature during the growth. High quality BSO crystals up to 50 mm×35 mm×35 mm were grown reproducibly.

  9. Frustration and defects in non-periodic solids

    Science.gov (United States)

    Mosseri, Rémy; Sadoc, Jean-François

    2014-01-01

    Geometrical frustration arises whenever a local preferred configuration (lower energy for atomic systems, or best packing for hard spheres) cannot be propagated throughout space without defects. A general approach, using unfrustrated templates defined in curved space, have been previously applied to analyse a large number of cases like complex crystals, amorphous materials, liquid crystals, foams, and even biological organizations, with scales ranging from the atomic level up to macroscopic scales. In this paper, we discuss the close sphere packing problem, which has some relevance to the structural problem in amorphous metals, quasicrystals and some periodic complex metallic structures. The role of sets of disclination line defects is addressed, in particular with comparison with the major skeleton occurring in complex large-cell metals (Frank-Kasper phases). An interesting example of 12-fold symmetric quasiperiodic Frank-Kasper phase, and its disclination network, is also described.

  10. 矿物晶体的缺陷%Crystallographic Defect in Minerals

    Institute of Scientific and Technical Information of China (English)

    陈丰; 李雄耀; 王世杰

    2012-01-01

    Crystalline solids have very regular atomic structures. However, most crystalline materials are not per-"fect, the regular pattern of atomic arrangement may be interrupted by crystal defects. The various types of defects are list here:point defects(vacancies; interstitial atoms, substitutional atoms, antisite defects, topological defects, Schottky defects, Frenkel defects), Line defects (dislocations), planar defects (grain boundaries, anti-phase boundaries, stacking faults) , bulk defectsCvoids, precipitates).%晶体具有极其规则的原子结构.然而,大多数晶体物质不是完整的,原子排列的规则图像被晶体缺陷所破坏.本文列举不同类型的缺陷:点缺陷(空位、间隙离子、置换离子、反位缺陷、拓扑缺陷、Schottky缺陷和Frenkel缺陷)、线缺陷(位错)、面缺陷(颗粒边界、小角晶界、反相畴和堆垛层错)和体缺陷(空洞和析出物).

  11. A three dimensional field formulation, and isogeometric solutions to point and line defects using Toupin's theory of gradient elasticity at finite strains

    Science.gov (United States)

    Wang, Z.; Rudraraju, S.; Garikipati, K.

    2016-09-01

    We present a field formulation for defects that draws from the classical representation of the cores as force dipoles. We write these dipoles as singular distributions. Exploiting the key insight that the variational setting is the only appropriate one for the theory of distributions, we arrive at universally applicable weak forms for defects in nonlinear elasticity. Remarkably, the standard, Galerkin finite element method yields numerical solutions for the elastic fields of defects that, when parameterized suitably, match very well with classical, linearized elasticity solutions. The true potential of our approach, however, lies in its easy extension to generate solutions to elastic fields of defects in the regime of nonlinear elasticity, and even more notably for Toupin's theory of gradient elasticity at finite strains (Toupin Arch. Ration. Mech. Anal., 11 (1962) 385). In computing these solutions we adopt recent numerical work on an isogeometric analytic framework that enabled the first three-dimensional solutions to general boundary value problems of Toupin's theory (Rudraraju et al. Comput. Methods Appl. Mech. Eng., 278 (2014) 705). We first present exhaustive solutions to point defects, edge and screw dislocations, and a study on the energetics of interacting dislocations. Then, to demonstrate the generality and potential of our treatment, we apply it to other complex dislocation configurations, including loops and low-angle grain boundaries.

  12. Elastic interactions between topological defects in chiral nematic shells

    Science.gov (United States)

    Darmon, Alexandre; Dauchot, Olivier; Lopez-Leon, Teresa; Benzaquen, Michael

    2016-12-01

    We present a self-consistent and robust theoretical model to investigate elastic interactions between topological defects in liquid crystal shells. Accounting for the nonconcentric nature of the shell in a simple manner, we are able to successfully and accurately explain and predict the positions of the defects, most relevant in the context of colloidal self-assembly. We calibrate and test our model on existing experimental data and extend it to all observed defects configurations in chiral nematic shells. We perform experiments to check further and confirm the validity of the present model. Moreover, we are able to obtain quantitative estimates of the energies of +1 or +3 /2 disclination lines in cholesterics, whose intricate nature was only reported recently [A. Darmon, et al. Proc. Natl. Acad. Sci. USA 113, 9469 (2016), 10.1073/pnas.1525059113].

  13. Investigation on abnormal group velocities in 1D coaxial photonic crystals

    Institute of Scientific and Technical Information of China (English)

    TONG Yuanwei; ZHANG Yewen; HE Li; LI Hongqiang; CHEN Hong

    2006-01-01

    In this paper, the group velocities of electromagnetic wave for a one-dimensional coaxial photonic crystal in the stop bands with and without defect mode are studied. The results show that the group velocities exceed c (the speed of light in vacuum) in the stop band and it tends to be very slow in the defect mode. The group velocities also are obtained using the method of the transmission line and transmission matrix. The simulating results agree well with the experimental.

  14. Loss of post-transcriptional regulation of DNMT3b by microRNAs: a possible molecular mechanism for the hypermethylation defect observed in a subset of breast cancer cell lines.

    Science.gov (United States)

    Sandhu, Rupninder; Rivenbark, Ashley G; Coleman, William B

    2012-08-01

    A hypermethylation defect associated with DNMT hyperactivity and DNMT3b overexpression characterizes a subset of breast cancers and breast cancer cell lines. We analyzed breast cancer cell lines for differential expression of regulatory miRs to determine if loss of miR-mediated post-transcriptional regulation of DNMT3b represents the molecular mechanism that governs the overexpression of DNMT3b that drives the hypermethylation defect in breast cancer. MicroRNAs (miRs) that regulate (miR-29a, miR-29b, miR-29c, miR-148a, miR-148b) or are predicted (miR-26a, miR-26b, miR-203, miR-222) to regulate DNMT3b were examined among 10 hypermethylator and 6 non-hypermethylator breast cancer cell lines. Hypermethylator cell lines express diminished levels of miR-29c, miR-148a, miR-148b, miR-26a, miR-26b, and miR-203 compared to non-hypermethylator cell lines. miR expression patterns correlate inversely with methylation-sensitive gene expression (r=-0.66, p=0.0056) and directly with the methylation status of these genes (r=0.72, p=0.002). To determine the mechanistic role of specific miRs in the dysregulation of DNMT3b among breast cancer cell lines, miR levels were modulated by transfection of pre-miR precursors for miR-148b, miR-26b, and miR-29c into hypermethylator cell lines (Hs578T, HCC1937, SUM185) and transfection of antagomirs directed against miR-148b, miR-26b, and miR-29c into non-hypermethylator cell lines (BT20, MDA-MB-415, MDA-MB-468). Antagomir-mediated knock-down of miR-148b, miR-29c, and miR-26b significantly increased DNMT3b mRNA in non-hypermethylator cell lines, and re-expression of miR-148b, miR-29c, and miR-26b following transfection of pre-miR precursors significantly reduced DNMT3b mRNA in hypermethylator cell lines. These findings strongly suggest that: i) post-transcriptional regulation of DNMT3b is combinatorial, ii) diminished expression of regulatory miRs contributes to DNMT3b overexpression, iii) re-expression of regulatory miRs reduces DNMT3b m

  15. Extremely large bandwidth and ultralow-dispersion slow light in photonic crystal waveguides with magnetically controllability

    DEFF Research Database (Denmark)

    Pu, Shengli; Wang, Haotian; Wang, Ning;

    2013-01-01

    A line-defect waveguide within a two-dimensional magnetic-fluid-based photonic crystal with 45o-rotated square lattice is presented to have excellent slow light properties. The bandwidth centered at $$ \\lambda_{0} $$ = 1,550 nm of our designed W1 waveguide is around 66 nm, which is very large tha...

  16. Comparison of Five Computational Methods for Computing Q Factors in Photonic Crystal Membrane Cavities

    DEFF Research Database (Denmark)

    Novitsky, Andrey; de Lasson, Jakob Rosenkrantz; Frandsen, Lars Hagedorn

    2017-01-01

    Five state-of-the-art computational methods are benchmarked by computing quality factors and resonance wavelengths in photonic crystal membrane L5 and L9 line defect cavities. The convergence of the methods with respect to resolution, degrees of freedom and number of modes is investigated. Specia...

  17. Functionalizing Designer DNA Crystals

    Science.gov (United States)

    Chandrasekaran, Arun Richard

    Three-dimensional crystals have been self-assembled from a DNA tensegrity triangle via sticky end interaction. The tensegrity triangle is a rigid DNA motif containing three double helical edges connected pair-wise by three four-arm junctions. The symmetric triangle contains 3 unique strands combined in a 3:3:1 ratio: 3 crossover, 3 helical and 1 central. The length of the sticky end reported previously was two nucleotides (nt) (GA:TC) and the motif with 2-helical turns of DNA per edge diffracted to 4.9 A at beam line NSLS-X25 and to 4 A at beam line ID19 at APS. The purpose of these self-assembled DNA crystals is that they can be used as a framework for hosting external guests for use in crystallographic structure solving or the periodic positioning of molecules for nanoelectronics. This thesis describes strategies to improve the resolution and to incorporate guests into the 3D lattice. The first chapter describes the effect of varying sticky end lengths and the influence of 5'-phosphate addition on crystal formation and resolution. X-ray diffraction data from beam line NSLS-X25 revealed that the crystal resolution for 1-nt (G:C) sticky end was 3.4 A. Motifs with every possible combination of 1-nt and 2-nt sticky-ended phosphorylated strands were crystallized and X-ray data were collected. The position of the 5'-phosphate on either the crossover (strand 1), helical (strand 2), or central strand (3) had an impact on the resolution of the self-assembled crystals with the 1-nt 1P-2-3 system diffracting to 2.62 A at APS and 3.1 A at NSLS-X25. The second chapter describes the sequence-specific recognition of DNA motifs with triplex-forming oligonucleotides (TFOs). This study examined the feasibility of using TFOs to bind to specific locations within a 3-turn DNA tensegrity triangle motif. The TFO 5'-TTCTTTCTTCTCT was used to target the tensegrity motif containing an appropriately embedded oligopurine.oligopyrimidine binding site. As triplex formation involving cytidine

  18. Logistic planning and control of reworking perishable production defectives

    NARCIS (Netherlands)

    R.H. Teunter (Ruud); S.D.P. Flapper

    2001-01-01

    textabstractWe consider a production line that is dedicated to a single product. Produced lots may be non-defective, reworkable defective, or non-reworkable defective. The production line switches between production and rework. After producing a fixed number (N) of lots, all reworkable defective lot

  19. Logistic planning and control of reworking perishable production defectives

    NARCIS (Netherlands)

    R.H. Teunter (Ruud); S.D.P. Flapper

    2001-01-01

    textabstractWe consider a production line that is dedicated to a single product. Produced lots may be non-defective, reworkable defective, or non-reworkable defective. The production line switches between production and rework. After producing a fixed number (N) of lots, all reworkable defective

  20. In-Line Measurement of Water Contents in Ethanol Using a Zeolite-Coated Quartz Crystal Microbalance

    Directory of Open Access Journals (Sweden)

    Byoung Chul Kim

    2015-10-01

    Full Text Available A quartz crystal microbalance (QCM was utilized to measure the water content in ethanol. For the improvement of measurement sensitivity, the QCM was modified by applying zeolite particles on the surface with poly(methyl methacrylate (PMMA binder. The measurement performance was examined with ethanol of 1% to 5% water content in circulation. The experimental results showed that the frequency drop of the QCM was related with the water content though there was some deviation. The sensitivity of the zeolite-coated QCM was sufficient to be implemented in water content determination, and a higher ratio of silicon to aluminum in the molecular structure of the zeolite gave better performance. The coated surface was inspected by microscopy to show the distribution of zeolite particles and PMMA spread.