Dipolar and quadrupolar defects in a transport line

International Nuclear Information System (INIS)

Leleux, G.; Nghiem, P.

1991-01-01

The defects on a transport line of linear accelerator are studied. A transport line where the elements are influenced by the design or position defects is analyzed. Only dipolar and quadrupolar defects are considered, and the coupling betwen transversal motions are excluded. The data from the literature and those calculated by transfer matrices are compared. The defects on a line are considered from an analytical point of view. Closed optical structures are also studied [fr

Electronic transport of bilayer graphene with asymmetry line defects

International Nuclear Information System (INIS)

Zhao Xiao-Ming; Chen Chan; Liang Ying; Kou Su-Peng; Wu Ya-Jie

2016-01-01

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer–Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. (paper)

Phononic crystals with one-dimensional defect as sensor materials

Science.gov (United States)

Aly, Arafa H.; Mehaney, Ahmed

2017-09-01

Recently, sensor technology has attracted great attention in many fields due to its importance in many engineering applications. In the present work, we introduce a study using the innovative properties of phononic crystals in enhancing a new type of sensors based on the intensity of transmitted frequencies inside the phononic band gaps. Based on the transfer matrix method and Bloch theory, the expressions of the reflection coefficient and dispersion relation are presented. Firstly, the influences of filling fraction ratio and the angle of incidence on the band gap width are discussed. Secondly, the localization of waves inside band gaps is discussed by enhancing the properties of the defected phononic crystal. Compared to the periodic structure, localization modes involved within the band structure of phononic crystals with one and two defect layers are presented and compared. Trapped localized modes can be detected easily and provide more information about defected structures. Such method could increase the knowledge of manufacturing defects by measuring the intensity of propagated waves in the resonant cavities and waveguides. Moreover, several factors enhance the role of the defect layer on the transmission properties of defected phononic crystals are presented. The acoustic band gap can be used to detect or sense the type of liquids filling the defect layer. The liquids make specific resonant modes through the phononic band gaps that related to the properties of each liquid. The frequency where the maximum resonant modes occur is correlated to material properties and allows to determine several parameters such as the type of an unknown material.

Entanglement entropy in integrable field theories with line defects II. Non-topological defect

Science.gov (United States)

Jiang, Yunfeng

2017-08-01

This is the second part of two papers where we study the effect of integrable line defects on bipartite entanglement entropy in integrable field theories. In this paper, we consider non-topological line defects in Ising field theory. We derive an infinite series expression for the entanglement entropy and show that both the UV and IR limits of the bulk entanglement entropy are modified by the line defect. In the UV limit, we give an infinite series expression for the coefficient in front of the logarithmic divergence and the exact defect g-function. By tuning the defect to be purely transmissive and reflective, we recover correctly the entanglement entropy of the bulk and with integrable boundary respectively.

TRANSMISSION ION CHANNELING IMAGES OF CRYSTAL DEFECTS

NARCIS (Netherlands)

KING, PJC; BREESE, MBH; WILSHAW, PR; SMULDERS, PJM; GRIME, GW

This paper demonstrates how images of crystal defects can be produced using ion channeling. A focused, scanned beam of MeV protons from the University of Oxford Nuclear Microprobe has been used. With the beam aligned with a channeling direction of the crystal, protons transmitted through the thinned

Auto-oscillations of temperature and defect density in impure crystals under irradiation

International Nuclear Information System (INIS)

Selishchev, P.A.; Sugakov, V.I.

1990-01-01

Appearance of auto-oscillations in temperature and defect density of impurity crystals under irradiation is studied. It is shown that at certain critical parameters stationary distribution of temperature and defect density of the sample irradiated becomes unstable as regards the formation of temporal dissipative structures: auto-oscillations of temperature and defect density. Critical parameters are determined (the rate of defect formation, temperature of crystal environment, etc.) and the frequency of appearing auto-oscillations, its dependence on irradiation conditions and crystal properties are found

Large-bandwidth planar photonic crystal waveguides

DEFF Research Database (Denmark)

Søndergaard, Thomas; Lavrinenko, Andrei

2002-01-01

A general design principle is presented for making finite-height photonic crystal waveguides that support leakage-free guidance of light over large frequency intervals. The large bandwidth waveguides are designed by introducing line defects in photonic crystal slabs, where the material in the line...... defect has appropriate dispersion properties relative to the photonic crystal slab material surrounding the line defect. A three-dimensional theoretical analysis is given for large-bandwidth waveguide designs based on a silicon-air photonic crystal slab suspended in air. In one example, the leakage......-free single-mode guidance is found for a large frequency interval covering 60% of the photonic band-gap....

Geometrically unrestricted, topologically constrained control of liquid crystal defects using simultaneous holonomic magnetic and holographic optical manipulation

Science.gov (United States)

Varney, Michael C. M.; Jenness, Nathan J.; Smalyukh, Ivan I.

2014-02-01

Despite the recent progress in physical control and manipulation of various condensed matter, atomic, and particle systems, including individual atoms and photons, our ability to control topological defects remains limited. Recently, controlled generation, spatial translation, and stretching of topological point and line defects have been achieved using laser tweezers and liquid crystals as model defect-hosting systems. However, many modes of manipulation remain hindered by limitations inherent to optical trapping. To overcome some of these limitations, we integrate holographic optical tweezers with a magnetic manipulation system, which enables fully holonomic manipulation of defects by means of optically and magnetically controllable colloids used as "handles" to transfer forces and torques to various liquid crystal defects. These colloidal handles are magnetically rotated around determined axes and are optically translated along three-dimensional pathways while mechanically attached to defects, which, combined with inducing spatially localized nematic-isotropic phase transitions, allow for geometrically unrestricted control of defects, including previously unrealized modes of noncontact manipulation, such as the twisting of disclination clusters. These manipulation capabilities may allow for probing topological constraints and the nature of defects in unprecedented ways, providing the foundation for a tabletop laboratory to expand our understanding of the role defects play in fields ranging from subatomic particle physics to early-universe cosmology.

Self-organized defect strings in two-dimensional crystals.

Science.gov (United States)

Lechner, Wolfgang; Polster, David; Maret, Georg; Keim, Peter; Dellago, Christoph

2013-12-01

Using experiments with single-particle resolution and computer simulations we study the collective behavior of multiple vacancies injected into two-dimensional crystals. We find that the defects assemble into linear strings, terminated by dislocations with antiparallel Burgers vectors. We show that these defect strings propagate through the crystal in a succession of rapid one-dimensional gliding and rare rotations. While the rotation rate decreases exponentially with the number of defects in the string, the diffusion constant is constant for large strings. By monitoring the separation of the dislocations at the end points, we measure their effective interactions with high precision beyond their spontaneous formation and annihilation, and we explain the double-well form of the dislocation interaction in terms of continuum elasticity theory.

Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

Science.gov (United States)

Abe, T.; Takahashi, T.; Shirai, K.

2017-02-01

In order to reveal a steady distribution structure of point defects of no growing Si on the solid-liquid interface, the crystals were grown at a high pulling rate, which Vs becomes predominant, and the pulling was suddenly stopped. After restoring the variations of the crystal by the pulling-stop, the crystals were then left in prolonged contact with the melt. Finally, the crystals were detached and rapidly cooled to freeze point defects and then a distribution of the point defects of the as-grown crystals was observed. As a result, a dislocation loop (DL) region, which is formed by the aggregation of interstitials (Is), was formed over the solid-liquid interface and was surrounded with a Vs-and-Is-free recombination region (Rc-region), although the entire crystals had been Vs rich in the beginning. It was also revealed that the crystal on the solid-liquid interface after the prolonged contact with the melt can partially have a Rc-region to be directly in contact with the melt, unlike a defect distribution of a solid-liquid interface that has been growing. This experimental result contradicts a hypothesis of Voronkov's diffusion model, which always assumes the equilibrium concentrations of Vs and Is as the boundary condition for distribution of point defects on the growth interface. The results were disscussed from a qualitative point of view of temperature distribution and thermal stress by the pulling-stop.

Gamma-induced defect production in ZrO2-Y2O3 crystals with different defectiveness

International Nuclear Information System (INIS)

Ashurov, M.Kh.; Amonov, M.Z.; Rakov, A.F.

2002-01-01

Full text: The defectiveness degree of ZrO 2 -Y 2 O 3 crystals depends on stabilizer concentration. The work is aimed at study gamma-induced defect production in crystals with different concentration of stabilizer and defects generated by neutron irradiation. Absorption spectra were measured with Specord M-40. It was found, that after gamma-irradiation of as-grown crystals up to some dose the intensity of absorption band at 420 nm reaches the maximum level of saturation. The dose of saturation depends of the concentration of stabilizer. It means that gamma-radiation does not produce any additional defects of structure. The oxygen vacancies existing in as-grown crystals are filled by the radiation induced electrons. Since the number of oxygen vacancies depends on the stabilizer concentration, then all these vacancies can be occupied by electrons at different gamma-doses. In crystals pre-irradiated with different neutron fluences followed by gamma-irradiation, the intensity of absorption bands at 420 and 530 nm increases in two stages. The gamma-dose of the second stage beginning decreases as the neutron fluence grows. The first stage of the absorption increase is due to developing of vacancies existing in as-grown crystals. The second stage is caused by generation of additional vacancies as the result of non-radiative exciton decay near the existing structure damages. The decrease of the gamma-dose, when the second stage of vacancy accumulation begins, results from the neutron induced structure damage degree

Creation of radiation defects in KCl crystals

International Nuclear Information System (INIS)

Lushchik, A.Ch.; Pung, L.A.; Khaldre, Yu.Yu.; Kolk, Yu.V.

1981-01-01

Optical and EPR methods were used to study the creation of anion and cation Frenkel defects in KCl crystals irradiated by X-ray and VUV-radiation. The decay of excitons with the creation of charged Frenkel defects (α and I centres) was detected and investigated at 4.2 K. The decay of excitons as well as the recombination of electrons with self-trapped holes leads to the creation of neutral Frenkel defects (F and H centres). The creation of Cl 3 - and Vsub(F) centres (cation vacancy is a component of these centres) by X-irradiation at 80 K proves the possibility of cation defects creation in KCl [ru

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

16-channel DWDM based on 1D defect mode nonlinear photonic crystal

Science.gov (United States)

Kalhan, Abhishek; Sharma, Sanjeev; Kumar, Arun

2018-05-01

We propose a sixteen-channel Dense Wavelength Division Multiplexer (DWDM), using the 1-D defect mode nonlinear photonic crystal which is a function of intensity as well as wavelength. Here, we consider an alternate layer of two semiconductor materials in which we found the bandgap of materials when defect layer is introduced then 16-channel dense wavelength division multiplexer is obtained within bandgap. From the theoretical analysis, we can achieve average quality factor of 7800.4, the uniform spectral line-width of 0.2 nm, crosstalk of -31.4 dB, central wavelength changes 0.07 nm/(1GW/cm2) and 100% transmission efficiency. Thus, Sixteen-channel DWDM has very high quality factor, low crosstalk, near 100% power transmission efficiency and small channel spacing (1.44 nm).

Electronic transport of bilayer graphene with asymmetry line defects

Science.gov (United States)

Zhao, Xiao-Ming; Wu, Ya-Jie; Chen, Chan; Liang, Ying; Kou, Su-Peng

2016-11-01

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

On the law of interaction between charged defects in ionic crystals

International Nuclear Information System (INIS)

Varaksin, A.N.; Kolmogorov, Yu.N.

1990-01-01

Values of E int PC (R 12 ) interaction energy between dominant defects in NaCl- and CaF 2 -type crystals are calculated using Mott-Littleton method in harmonic approximation. It is shown, that interaction between cationic and anionic vacancies in NaCl type crystals is described using Coulomb law for charge interaction in dielectric up till R 12 smallest distances between vacancies. Good conformity of E int PC R 12 values with calculation made using Coulomb formula should be expected for Frenkel anionic pair in CaF 2 type crystals. Deviations from Coulomb law are possible for other defects at R 12 small distances; deviation degree depends on lattice type, defect type and on relative polarizability of crystal cationic and anionic sublattices. Calculations of E int PC (R 12 ) values using Mott-Littleton method are compared with calculations conducted by MOLSTAT program using molecular static method

Radiation defects in electron-irradiated InP crystals

International Nuclear Information System (INIS)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

1982-01-01

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

Radiation defects in electron-irradiated InP crystals

Energy Technology Data Exchange (ETDEWEB)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

1982-06-16

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

Spin helical states and spin transport of the line defect in silicene lattice

Energy Technology Data Exchange (ETDEWEB)

Yang, Mou; Chen, Dong-Hai; Wang, Rui-Qiang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui, E-mail: ykbai@semi.ac.cn [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

2015-02-06

We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide. - Highlights: • Band structure of silicene with a line defect. • Spin helical states around the line defect and their probability distribution features. • Spin transport along the line defect and that in the bulk silicene.

Energy flow in photonic crystal waveguides

DEFF Research Database (Denmark)

Søndergaard, Thomas; Dridi, Kim

2000-01-01

Theoretical and numerical investigations of energy flow in photonic crystal waveguides made of line defects and branching points are presented. It is shown that vortices of energy flow may occur, and the net energy flow along: the line defect is described via the effective propagation velocity....... Single-mode and multimode operations are studied, and dispersion relations are computed for different waveguide widths. Both strong positive, strong negative, and zero dispersion an possible. It is shown that geometric parameters such as the nature of the lattice, the line defect orientation, the defect...... width, and the branching-point geometry have a significant influence on the electrodynamics. These are important issues for the fabrication of photonic crystal structures....

First-Principles Investigations of Defects in Minerals

Science.gov (United States)

Verma, Ashok K.

2011-07-01

The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

Localized electromagnetic modes and transmission spectrum of one-dimensional photon crystal with lattice defects

CERN Document Server

Vetrov, S Y

2001-01-01

The properties of the localized electromagnetic modes in the one-dimensional photon crystal with a structural defective layer are studied. The anisotropic layer of the nematic liquid layer is considered as the defect. It is shown that the frequency and coefficient of the defective modes attenuation essentially depend on the defective layer thickness and nematic optical axis orientation. The spectrum of the photon crystal transmittance with one or two defects in the lattice is studied. The possibility of controlling the the photon crystal transmittance spectrum on the count of changing the orientation of the nematic optical axis, for example, through the external electric field is shown with an account of strong anisotropy of the dielectric permittivity

Effects of crystal defects on the diffuse scattering of X-rays

International Nuclear Information System (INIS)

Kremser, R.

1974-01-01

This thesis concerns with the influence of crystal defects in germanium-drifted silicium and in α=quartz on the intensity of the diffuse X-ray scattering. The experiments were performed at low and high temperatures to show the effect of the atomic thermal motion on the intensity of the diffuse maxima. The comparison of the results for pure silicium and for the germanium-drifted crystal gives information about the relation between the frequency-spectra and the defects of the drifted silicium. For α-quarts it was not possible to relate unequivocally the observed changes in the intensity to individual defects. (C.R.)

First-order and tricritical wetting transitions in the two-dimensional Ising model caused by interfacial pinning at a defect line.

Science.gov (United States)

Trobo, Marta L; Albano, Ezequiel V; Binder, Kurt

2014-08-01

We present a study of the critical behavior of the Blume-Capel model with three spin states (S=±1,0) confined between parallel walls separated by a distance L where competitive surface magnetic fields act. By properly choosing the crystal field (D), which regulates the density of nonmagnetic species (S=0), such that those impurities are excluded from the bulk (where D=-∞) except in the middle of the sample [where D(M)(L/2)≠-∞], we are able to control the presence of a defect line in the middle of the sample and study its influence on the interface between domains of different spin orientations. So essentially we study an Ising model with a defect line but, unlike previous work where defect lines in Ising models were defined via weakened bonds, in the present case the defect line is due to mobile vacancies and hence involves additional entropy. In this way, by drawing phase diagrams, i.e., plots of the wetting critical temperature (T(w)) versus the magnitude of the crystal field at the middle of the sample (D(M)), we observe curves of (first-) second-order wetting transitions for (small) high values of D(M). Theses lines meet in tricritical wetting points, i.e., (T(w)(tc),D(M)(tc)), which also depend on the magnitude of the surface magnetic fields. It is found that second-order wetting transitions satisfy the scaling theory for short-range interactions, while first-order ones do not exhibit hysteresis, provided that small samples are used, since fluctuations wash out hysteretic effects. Since hysteresis is observed in large samples, we performed extensive thermodynamic integrations in order to accurately locate the first-order transition points, and a rather good agreement is found by comparing such results with those obtained just by observing the jump of the order parameter in small samples.

Defect modes in silver-doped photonic crystals made by holography using dichromated gelatin

Science.gov (United States)

Dai, Rui; Chen, Shujing; Ren, Zhi; Wang, Zhaona; Liu, Dahe

2012-10-01

The defect mode in silver-doped photonic crystals is investigated. 1D and 3D photonic crystals were made by holography using dichromated gelatin mixed with silver nitrate. By controlling the concentration of the silver nitrate, the defect mode was observed in the bandgaps of the holographic photonic crystals. The numerical simulations were made, and the results showed the consistency with the experimental observations.

Defect sensitive etching of hexagonal boron nitride single crystals

Science.gov (United States)

Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

2017-12-01

Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

Ferromagnetically coupled local moments along an extended line defect in graphene

Science.gov (United States)

White, Carter T.; Vasudevan, Smitha; Gunlycke, Daniel

2011-03-01

Recently an extended line defect was observed composed of octagonal and pentagonal carbon rings embedded in a graphene sheet [Nat. Nanotech. 5, 326 (2010)]. We report results of studies we have made of this defect using both first-principles and semi-empirical methods. Two types of boundary-localized states arising from the defect are identified. The first (second) type has eigenstates with wavefunctions that are anti- symmetric (symmetric) with respect to a mirror plane that is perpendicular to the graphene sheet and passes through the line defect center line. The boundary-localized anti-symmetric states are shown to be intimately connected to the zigzag edge states of semi-infinite graphene. They exhibit little dispersion along the defect line and lie close to the Fermi level giving rise to a spontaneous spin polarization along the defect once electron-electron interactions are included at the level of a mean field approximation to a Hubbard Model. Within this approach, symmetry requires that the principal moments couple ferromagnetically both along and across the line defect leading to approximately 2/3 more up than down spin electrons per defect repeat unit. This work was supported by ONR, directly and through NRL.

Temperature dependence of the defect luminescence in La2Be2O5 single crystals

International Nuclear Information System (INIS)

Ogorodnikov, I.N.; Pustovarov, V.A.

2015-01-01

Temperature quenching (TQ) curves in the temperature range of 80–500 K have been studied for both the undoped, and doped with RE 3+ -ions (RE = Ce, Eu, Er, Pr, Nd) lanthanum beryllate (BLO) single crystals. Photoluminescence spectra and TQ-curves were recorded upon excitation in the absorption bands of the lattice defects. The reaction rate model has been developed to describe the experimental results. The model includes two competing processes with characteristic temperatures: thermal quenching of intracenter PL (T 1 ) and thermally stimulated migration of electronic excitations (T 2 ). The competition between these two processes leads to the observed non-monotonic TQ-curves. The rationalized formulas using three parameters (intensity, activation energy, characteristic temperature), were developed to describe each of these processes. Within the framework of the unified model, all the experimental results were described and the best fit parameters were obtained. Classification of the investigated lanthanum beryllate crystals was carried out in line with the best fit parameters obtained for the TQ-curves. - Highlights: • We studied La 2 Be 2 O 5 (BLO) single crystals (pristine and RE 3+ -doped). • We studied PL emission spectra of defects in BLO and BLO:RE 3+ . • Temperature quenching of the defect PL emission was studied at 80–500 K. • We developed the reaction rate model to describe non-monotonic TQ-curves. • TQ-curves were parameterized for BLO, BLO:RE 3+ (RE = Ce, Pr, Eu, Nd, Er).

Radiation effects and defects in lithium borate crystals

Science.gov (United States)

Ogorodnikov, Igor N.; Poryvay, Nikita E.; Pustovarov, Vladimir A.

2010-11-01

The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB3O5 (LBO), Li2B4O7 (LTB) and Li6Gd(BO3)3 (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li0 trapped-electron centers. At 290 K, the Li0 centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

CRYSTAL-QUASICHEMICAL ANALYSIS OF DEFECT SUBSYSTEM OF DOPED PbTe: Sb CRYSTALS AND Pb-Sb-Te SOLID SOLUTIONS

Directory of Open Access Journals (Sweden)

D.M. Freik

2014-05-01

Full Text Available Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb2Те3: replacement of antimony ions lead sites  with the formation of cation vacancies  (I or neutral interstitial tellurium atoms  (II were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb2Те3 solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.

Analysis of Bending Waves in Phononic Crystal Beams with Defects

Directory of Open Access Journals (Sweden)

Yongqiang Guo

2018-01-01

Full Text Available Existing investigations on imperfect phononic crystal beams mainly concern periodic multi-span beams carrying either one or two channel waves with random or deterministic disorder in span-length. This paper studies the two channel bending waves in phononic crystal beams consisting of many phases of materials with defects introduced as one structural segment having different cross-sectional dimensions or material parameters. The method of reverberation-ray matrix (MRRM based on the Timoshenko beam theory, which can conduct high-frequency analysis, is extended for the theoretical analysis of dispersion and transmission of bending waves. The supercell technique and the Floquet–Bloch theorem are adopted for modeling the dispersion characteristics, and the whole finite structural model is used to calculate the transmission spectra. Experimental measurements and numerical calculations are provided to validate the displacement transmission obtained by the proposed MRRM, with the effect of damping on transmission spectra being concerned. The high-frequency calculation applicability of the proposed MRRM is also confirmed by comparing the present results with the corresponding ones either using the transfer matrix method (TMM or MRRM based on Euler—Bernoulli beam theory. The influences of defect size, defect form, and unit-cell number on the transmission spectra and the band structures are discussed. The drawn conclusions may be useful for designing or evaluating the defected phononic crystal beams in bending wave control. In addition, our conclusions are especially potential for identifying the defect location through bending wave signals.

Tunable single photonic defect-mode in cholesteric liquid crystals with laser-induced local modifications of helix

International Nuclear Information System (INIS)

Yoshida, Hiroyuki; Lee, Chee Heng; Fujii, Akihiko; Ozaki, Masanori

2006-01-01

The authors demonstrate a tunable single photonic defect-mode in a single cholesteric liquid crystal material based on a structural defect introduced by local modification of the helix. An unpolymerized region of cholesteric liquid crystal acting as the defect was left between two polymerized regions via a two-photon excitation laser-lithography process. Upon polymerization, the cholesteric liquid crystal helix elongated and became thermally stable, and a single photonic defect mode was exhibited due to the contrast in the helix pitch at the defect. The defect mode showed tunability upon heating, and a 36 nm redshift was seen over a temperature range of 30 deg. C

Ion channeling study of defects in compound crystals using Monte Carlo simulations

Science.gov (United States)

Turos, A.; Jozwik, P.; Nowicki, L.; Sathish, N.

2014-08-01

Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO3) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

Defect reduction in seeded aluminum nitride crystal growth

Science.gov (United States)

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

2017-09-26

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Point defects in lines in single crystalline phosphorene: directional migration and tunable band gaps.

Science.gov (United States)

Li, Xiuling; Ma, Liang; Wang, Dayong; Zeng, Xiao Cheng; Wu, Xiaojun; Yang, Jinlong

2016-10-20

Extended line defects in two-dimensional (2D) materials can play an important role in modulating their electronic properties. During the experimental synthesis of 2D materials, line defects are commonly generated at grain boundaries between domains of different orientations. In this work, twelve types of line-defect structures in single crystalline phosphorene are examined by using first-principles calculations. These line defects are typically formed via migration and aggregation of intrinsic point defects, including the Stone-Wales (SW), single or double vacancy (SV or DV) defects. Our calculated results demonstrate that the migration of point defects in phosphorene is anisotropic, for instance, the lowest migration energy barriers are 1.39 (or 0.40) and 2.58 (or 0.49) eV for SW (or SV) defects in zigzag and armchair directions, respectively. The aggregation of point defects into lines is energetically favorable compared with the separated point defects in phosphorene. In particular, the axis of line defects in phosphorene is direction-selective, depending on the composed point defects. The presence of line defects effectively modulates the electronic properties of phosphorene, rendering the defect-containing phosphorene either metallic or semiconducting with a tunable band gap. Of particular interest is the fact that the SV-based line defect can behave as a metallic wire, suggesting a possibility to fabricate a circuit with subnanometer widths in the semiconducting phosphorene for nanoscale electronic application.

Influence of defects on positron transmission and annihilation in the lithium fluoride crystal

International Nuclear Information System (INIS)

Varisov, A.Z.; Kozlov, V.G.

1984-01-01

The positron implantation profile and the angular distribution of annihilation γ quanta were determined for a lithium fluoride crystal under β + and γ irradiation ( 22 Na source). The positron absorption coefficient of the irradiated crystal was α = 76.2 +- 1.5 cm -1 . The angular distribution had a strong narrow component. After thermal bleaching of the crystal, α = 91.9 +- 1.5 cm -1 , the narrow component made a smaller contribution to the angular distribution, and its half-width increased. The positron mobility was found to be μ = 18 +- 8 cm 2 x V -1 x sec -1 . It is suggested that defects influence in two ways the fate of positrons in the lithium fluoride crystal: free positrons may be trapped by some defects (cationic vacancies) or annihilated in collisions with others (F centers). The defect concentration is estimated

Radiation effects and defects in lithium borate crystals

Energy Technology Data Exchange (ETDEWEB)

Ogorodnikov, Igor N; Poryvay, Nikita E; Pustovarov, Vladimir A, E-mail: igor.ogorodnikov@bk.ru [Ural Federal University, Mira Street, 19, Ekaterinburg 620002 (Russian Federation)

2010-11-15

The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB{sub 3}O{sub 5} (LBO), Li{sub 2}B{sub 4}O{sub 7} (LTB) and Li{sub 6}Gd(BO{sub 3}){sub 3} (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li{sup 0} trapped-electron centers. At 290 K, the Li{sup 0} centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

The Faraday effect of an antiferromagnetic photonic crystal with a defect layer

International Nuclear Information System (INIS)

Wang Xuanzhang

2005-01-01

A theoretical calculation of the Faraday optical rotation effect of an antiferromagnetic (AF) photonic crystal is presented. This crystal is composed of AF and dielectric (D) layers and contains an AF defect layer. From the theoretical results for the FeF 2 -SiO 2 crystal, we see a defect mode with high transmission and a high Faraday rotation angle in the optical stop band for ω/2πc -1 . The Faraday rotation of the mode is about 28 deg. mm -1 and 15 times that of the single AF film. Another more striking property is that the rotation in the vicinity of the zero-field AF resonance frequency is even larger than that of the defect mode: about 250 times. The Faraday rotation can be tuned by changing the strength of the external static magnetic field

Production and recombination of radiation defects in argon and krypton crystals

International Nuclear Information System (INIS)

Giersberg, E.J.

1981-01-01

Relative changes in the lattice constants of argon and krypton crystals have been measured by X-ray diffraction. As a result X-ray irradiation is found to produce stable defects. The recombination behaviour of these defects can be determined by isochronous and isothermal annealing. The creation of primary defects can be explained by exciton excitation and double-ionisation. (orig.) [de

Characterisation of irradiation-induced defects in ZnO single crystals

International Nuclear Information System (INIS)

Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)

Characterisation of irradiation-induced defects in ZnO single crystals

Science.gov (United States)

Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

The role of diffusion measurements in the study of crystal lattice defects

Energy Technology Data Exchange (ETDEWEB)

Kidson, G V

1965-07-15

Measurements of atomic mobility in solids are frequently of direct interest to those concerned with the design, development and utilization of materials in engineering. Increasing attention, however, is currently devoted to an under standing of such properties in terms of the occurrence and nature of point and line defects in the crystals. This paper reviews some recent diffusion studies conducted at C.R,N.L. that provide, in addition to data of interest in nuclear technology, a means of gaining some insight into the more fundamental nature of the lattice defects occurring in the materials. The systems discussed are (i) self diffusion in the high temperature phase of pure zirconium (ii) solute diffusion in lead and (iii) interdiffusion of aluminum and zirconium The unusual and at present incompletely understood results described in (i) are briefly reviewed. Evidence is given to suggest that diffusion occurs either through a dense dislocation network produced as a result of a martensitic phase transformation, or, alternatively, by excess vacancies introduced into the crystal by impurities. In (ii) the extraordinarily rapid diffusion of noble metal solutes in high purity lead single crystals will be discussed n terms of the state of solution of the solute atoms. It will be shown that their diffusion behaviour can be understood by assuming that a fraction f{sub i} of the dissolved solute atoms occupy interstitial sites, The measured diffusion coefficient D{sub m} is related to the interstitial diffusion coefficient by D{sub m} = f{sub i} D{sub i}. In (iii) the formation and rapid growth of single intermetallic compound ZrAl{sub 3} in the diffusion zone formed between pure zirconium and pure aluminum is described and the diffusion mechanism is interpreted in terms of the structure of the compound lattice. The results indicate that ZrAl{sub 3} forms a defect lattice, leading to the relatively rapid migration of aluminum atoms. (author)

Spectrally resolved thermally stimulated luminescence of irradiated anion-defective alumina single crystals

Energy Technology Data Exchange (ETDEWEB)

Kortov, V., E-mail: vskortov@mail.ru [Ural Federal University, Mira Str. 19, 620002 Ekaterinburg (Russian Federation); Lushchik, A.; Nagirnyi, V. [Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu (Estonia); Ananchenko, D. [Ural Federal University, Mira Str. 19, 620002 Ekaterinburg (Russian Federation); Romet, I. [Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu (Estonia)

2017-06-15

Thermally stimulated luminescence (TSL) spectra in the 313–580 K temperature range have been studied in anion-defective alumina crystals (named in literature as Al{sub 2}O{sub 3}:C) exposed to different irradiation doses. The TSL curve features two peaks with the maxima at T{sub m1}=437 K and T{sub m2}=565 K. The TSL spectrum of the first peak contains the emission of F centers and the R line of Cr{sup 3+} impurity ions. The absence of the emission of F{sup +} centers indicates that electron traps are responsible for the first dosimetric TSL peak. The TSL spectrum of the second peak features emission bands of F, F{sup +} centers, R line as well as a wide band centered at 550 nm and associated with the formation of aggregate centers (F{sub 2} and F{sub 2}{sup 2+}) under irradiation. Possible excitation mechanisms of the TSL emission bands that involve both electron and hole traps related to anion vacancies and impurities are discussed. - Highlights: •TSL curve of alumina crystals features peaks at 437 and 565 K. •There are emission bands of 410 and 695 nm in the TSL spectrum of the first peak. •TSL spectrum of the second peak features bands of F, F{sub 2}-type centers and the R line of trivalent chromium. •Excitation mechanisms of the emission bands in TSL spectra are discussed.

Study on growth techniques and macro defects of large-size Nd:YAG laser crystal

Science.gov (United States)

Quan, Jiliang; Yang, Xin; Yang, Mingming; Ma, Decai; Huang, Jinqiang; Zhu, Yunzhong; Wang, Biao

2018-02-01

Large-size neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystals were grown by the Czochralski method. The extinction ratio and wavefront distortion of the crystal were tested to determine the optical homogeneity. Moreover, under different growth conditions, the macro defects of inclusion, striations, and cracking in the as-grown Nd:YAG crystals were analyzed. Specifically, the inclusion defects were characterized using scanning electron microscopy and energy dispersive spectroscopy. The stresses of growth striations and cracking were studied via a parallel plane polariscope. These results demonstrate that improper growth parameters and temperature fields can enhance defects significantly. Thus, by adjusting the growth parameters and optimizing the thermal environment, high-optical-quality Nd:YAG crystals with a diameter of 80 mm and a total length of 400 mm have been obtained successfully.

Hydrodynamics of defects in nematic liquid crystal films

International Nuclear Information System (INIS)

Kurz, G.

1999-01-01

In this thesis I propose a new theory to deal with the presence of a macroscopic density of defects or disclinations in two-dimensional systems of uniaxial nematic liquid crystal. The static part of the Abelian-Higgs model is the basis for a gauge covariant form of the Frank free energy for distortions in nematics, where the gauge field models the screening due to the presence of the defects. Certain results for vortices in the Abelian-Higgs model are reformulated for use in my theory. The model suggests disclinations with an isotropic core region. The covariant Frank free energy is used to derive a new form of the Ericksen-Leslie equations describing the hydrodynamics off nematics. These equations are set up according to the concept of thermodynamic fluxes and forces. Detailed analytic results are derived for the case where the dynamics is due to director reorientations, but no liquid flow. The hydrodynamic equations are reduced to dynamic equations for disclination points assuming a quasi-static motion in moduli space. The static form of the disclinations is based on solutions in the Bogomol'nyi limit, their quasi-static motion is induced through a deviation from this limit. The resulting equations are valid for a configuration containing disclinations with winding numbers of the same sign. These general equations require a, specific ansatz to yield further results. I consider two regimes, for defects close together and far apart from one another. A set of disclinations with winding numbers of the same sign which are close to one another, i.e. with overlapping cores, can result from disintegration of a larger disclination, and they repel one another. The results for this case predict how the disintegration could occur. The interaction of disclinations, with winding numbers of the same sign, which are far apart from one another is repulsive and decreases exponentially with the distances between them. Two such disclinations move on a straight line where their

Defects in silicon effect on device performance and relationship to crystal growth conditions

Science.gov (United States)

Jastrzebski, L.

1985-01-01

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Radiation defects in SrB4O7:Eu2+ crystals

International Nuclear Information System (INIS)

Yavetskiy, R.P.; Dolzhenkova, E.F.; Tolmachev, A.V.; Parkhomenko, S.V.; Baumer, V.N.; Prosvirnin, A.L.

2007-01-01

Radiation-induced defects in SrB 4 O 7 :Eu 2+ (0.033 at.%) single crystal irradiated with γ and X-ray quanta has been studied. The induced optical absorption in the 400-700 nm region has been ascribed to F + centers. The Eu 2+ ions have been shown to act simultaneously as traps and as radiative recombination centers of charge carriers. Basing on the thermally stimulated luminescence (TSL), optical absorption and photoluminescence studies of SrB 4 O 7 :Eu 2+ crystals, a TSL mechanism has been proposed associated with the decay of F + centers being in non-equivalent crystallographic positions followed by radiative recombination of charge carriers on europium ions. Various positions of localization of the radiation-induced defects in the SrB 4 O 7 crystal structure have been discussed

Application of triple-crystal diffractometry for study of ion implanted layer defects

International Nuclear Information System (INIS)

Shcherbachev, K.D.; Bublik, V.T.

2000-01-01

Application of a triple-crystal arrangement, unlike traditionally used double-crystal one, allowed one to separate coherent and incoherent scattering components and to improve a resolution significantly. Advantages of the triple-crystal X-ray diffractometry to study defects in ion-implanted layers are demonstrated by example of characterisation of Si-GaAs(100) wafers doped by Si + with energy of 50 keV and does of 1x10 15 and 1x10 14 cm -2 . To explain a behaviour of point defects after implantation and annealing the analysis of strain depth profile was used. Two processes are shown to play a key role in formation of the distorted layer during implantation. The first one is an annihilation of Frenkel pairs components that decreases the total point defects concentration. Another one is a sink of more mobile interstitials to the surface that leads to formation of the thin subsurface layer enriched by vacancies [ru

Study on sensing property of one-dimensional ring mirror-defect photonic crystal

Science.gov (United States)

Chen, Ying; Luo, Pei; Cao, Huiying; Zhao, Zhiyong; Zhu, Qiguang

2018-02-01

Based on the photon localization and the photonic bandgap characteristics of photonic crystals (PCs), one-dimensional (1D) ring mirror-defect photonic crystal structure is proposed. Due to the introduction of mirror structure, a defect cavity is formed in the center of the photonic crystal, and then the resonant transmission peak can be obtained in the bandgap of transmission spectrum. The transfer matrix method is used to establish the relationship model between the resonant transmission peak and the structure parameters of the photonic crystals. Using the rectangular air gate photonic crystal structure, the dynamic monitoring of the detected gas sample parameters can be achieved from the shift of the resonant transmission peak. The simulation results show that the Q-value can attain to 1739.48 and the sensitivity can attain to 1642 nm ṡ RIU-1, which demonstrates the effectiveness of the sensing structure. The structure can provide certain theoretical reference for air pollution monitoring and gas component analysis.

Defect-induced local variation of crystal phase transition temperature in metal-halide perovskites.

Science.gov (United States)

Dobrovolsky, Alexander; Merdasa, Aboma; Unger, Eva L; Yartsev, Arkady; Scheblykin, Ivan G

2017-06-26

Solution-processed organometal halide perovskites are hybrid crystalline semiconductors highly interesting for low-cost and efficient optoelectronics. Their properties are dependent on the crystal structure. Literature shows a variety of crystal phase transition temperatures and often a spread of the transition over tens of degrees Kelvin. We explain this inconsistency by demonstrating that the temperature of the tetragonal-to-orthorhombic phase transition in methylammonium lead triiodide depends on the concentration and nature of local defects. Phase transition in individual nanowires was studied by photoluminescence microspectroscopy and super-resolution imaging. We propose that upon cooling from 160 to 140 K, domains of the crystal containing fewer defects stay in the tetragonal phase longer than highly defected domains that readily transform to the high bandgap orthorhombic phase at higher temperatures. The existence of relatively pure tetragonal domains during the phase transition leads to drastic photoluminescence enhancement, which is inhomogeneously distributed across perovskite microcrystals.Understanding crystal phase transition in materials is of fundamental importance. Using luminescence spectroscopy and super-resolution imaging, Dobrovolsky et al. study the transition from the tetragonal to orthorhombic crystal phase in methylammonium lead triiodide nanowires at low temperature.

Investigation of the crystal lattice defects by means of the positrons annihilations

International Nuclear Information System (INIS)

Dryzek, J.

1994-01-01

In this report the positrons annihilation methods as a tool for the crystal defects studies is presented. The short description of the positron - crystal interactions and different positron capture models are discussed. 192 refs, 67 figs, 6 tabs

In Situ Observation of Antisite Defect Formation during Crystal Growth

International Nuclear Information System (INIS)

Kramer, M. J.; Napolitano, R. E.; Mendelev, M. I.

2010-01-01

In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, suggesting that the behavior is associated with the kinetic trapping of lattice defects. MD simulations demonstrate that this lattice response is due to incorporation of 1% to 2% antisite defects during growth.

Evidence for low temperature line-like behaviour of vortices in columnar defected Bi2Sr2CaCu2O8 single crystals

International Nuclear Information System (INIS)

Hebert, S; Perkins, G K; El-Salam, M Abd; Caplin, A D

2003-01-01

The interaction between vortices and columnar defects has been investigated in detail in Bi 2 Sr 2 CaCu 2 O 8 crystals irradiated with heavy ions along one direction, in one sample at 45 deg. from the c-axis, and in another at 75 deg. At all temperatures down to ∼30 K the irreversible magnetization is a maximum when the field is aligned with columns, although this peak is much more prominent at high temperatures and when the irreversibility field is approached. In the temperature-field-angle regime where the effect of the columns is dominant, the creep rate is close to 0.3, with little field or temperature dependence. These results can be understood in terms of line-like vortices, pinned both by columns and by point-like disorder, with much of the latter arising from collateral damage by the irradiation. The narrowness of the peak in the angular dependences is consistent with a locked state of the vortices to the columns

Structural peculiarities and point defects of bulk-ZnO single crystals

International Nuclear Information System (INIS)

Kaurova, I.A.; Kuz’micheva, G.M.; Rybakov, V.B.; Cousson, A.; Gayvoronsky, V.Ya.

2014-01-01

Highlights: • ZnO single crystals of different color were grown by the hydrothermal method. • Point defects in ZnO have been firstly investigated by neutron diffraction. • Presence of additional reflections caused by kinetic growth effects was revealed. • The relationship between the color and zinc and oxygen vacancies was found. • Photoinduced variation of transmittance versus the CW laser intensity was analyzed. - Abstract: ZnO single crystals are related to promising direct wide band gap semiconductor materials belonging to the A II B VI type of compounds with wurtzite structure. “Unintentional” n-type conductivity in ZnO may be caused by zinc and oxygen vacancies, and interstitial zinc atoms. To date, the comprehensive structural investigation and analysis of point defects in ZnO is absent in literature. Green, light green and almost colorless ZnO single crystals grown by the hydrothermal method in concentrated alkali solutions 4M(KOH) + 1M(LiOH) + 0.1M(NH 4 OH) on monohedral seeds [0 0 0 1] at crystallization temperatures in the range of 330–350 °C and pressures in the range of 30–50 MPa have been firstly investigated by neutron diffraction. It was revealed the presence of additional reflections (∼12–∼16%) for all the crystals caused by kinetic growth effects that give grounds to assign them to the space group P3 rather than to P6 3 mc. Analysis of the refined compositions together with the color of ZnO crystals does not rule out the relationship between the color and vacancies in the zinc and oxygen positions whose concentration decreases with the discoloration of the samples. The analysis of the photoinduced variation of the total and on-axis transmittance versus the CW laser intensity showed that the colored samples have profound deep defects related to oxygen vacancies

Crystal defect studies using x-ray diffuse scattering

Energy Technology Data Exchange (ETDEWEB)

Larson, B.C.

1980-01-01

Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above.

Crystal defect studies using x-ray diffuse scattering

International Nuclear Information System (INIS)

Larson, B.C.

1980-01-01

Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Science.gov (United States)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Energy Technology Data Exchange (ETDEWEB)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

International Nuclear Information System (INIS)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Defects in TiO2 crystals produced by neutron irradiations at 20 K

International Nuclear Information System (INIS)

Okada, M.; Nakagawa, M.; Atobe, K.; Kawabata, Y.

1994-01-01

The single crystals rutile (TiO 2 ), cut parallel and perpendicular to the c-axis, are irradiated by reactor neutrons at 20 K (8.0x10 16 n/cm 2 ; E>0.1 MeV). By means of optical measurements an intense absorption band, which has a maximum peak near 1 μm (having FWHM similar 0.87 eV), is observed and is annealed out at about 220 K. Also, some kinds of defect centers can be distinguished by ESR measurements. The broad band has similar characteristics to that in reduced TiO 2 crystal, in which the band has a maximum peak at 1.5 μm. With heavy reduction, the intensity of the broad band enhances with increasing electrical conductivity. It has been proposed that the origin of the band in reduced crystals may be attributable to the absorption of donors due to the polaron effects. The evidence for the assignment to the defect in the irradiated crystals is obtained by optical, ESR, and electrical resistivity measurements. The results lead to quite a different origin for the irradiation produced defect centers. ((orig.))

Pulse-height defect in single-crystal CVD diamond detectors

Energy Technology Data Exchange (ETDEWEB)

Beliuskina, O.; Imai, N. [The University of Tokyo, Center for Nuclear Study, Wako, Saitama (Japan); Strekalovsky, A.O.; Aleksandrov, A.A.; Aleksandrova, I.A.; Ilich, S.; Kamanin, D.V.; Knyazheva, G.N.; Kuznetsova, E.A.; Mishinsky, G.V.; Pyatkov, Yu.V.; Strekalovsky, O.V.; Zhuchko, V.E. [JINR, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region (Russian Federation); Devaraja, H.M. [Manipal University, Manipal Centre for Natural Sciences, Manipal, Karnataka (India); Heinz, C. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Heinz, S. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Hofmann, S.; Kis, M.; Kozhuharov, C.; Maurer, J.; Traeger, M. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Pomorski, M. [CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif-sur-Yvette (France)

2017-02-15

The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of {sup 252} Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed. (orig.)

Computer simulations of liquid crystals: Defects, deformations and dynamics

Science.gov (United States)

Billeter, Jeffrey Lee

1999-11-01

Computer simulations play an increasingly important role in investigating fundamental issues in the physics of liquid crystals. Presented here are the results of three projects which utilize the unique power of simulations to probe questions which neither theory nor experiment can adequately answer. Throughout, we use the (generalized) Gay-Berne model, a widely-used phenomenological potential which captures the essential features of the anisotropic mesogen shapes and interactions. First, we used a Molecular Dynamics simulation with 65536 Gay-Berne particles to study the behaviors of topological defects in a quench from the isotropic to the nematic phase. Twist disclination loops were the dominant defects, and we saw evidence for dynamical scaling. We observed the loops separating, combining and collapsing, and we also observed numerous non-singular type-1 lines which appeared to be intimately involved with many of the loop processes. Second, we used a Molecular Dynamics simulation of a sphere embedded in a system of 2048 Gay-Berne particles to study the effects of radial anchoring of the molecules at the sphere's surface. A saturn ring defect configuration was observed, and the ring caused a driven sphere (modelling the falling ball experiment) to experience an increased resistance as it moved through the nematic. Deviations from a linear relationship between the driving force and the terminal speed are attributed to distortions of the saturn ring which we observed. The existence of the saturn ring confirms theoretical predictions for small spheres. Finally, we constructed a model for wedge-shaped molecules and used a linear response approach in a Monte Carlo simulation to investigate the flexoelectric behavior of a system of 256 such wedges. Novel potential models as well as novel analytical and visualization techniques were developed for these projects. Once again, the emphasis throughout was to investigate questions which simulations alone can adequately answer.

A novel method to alleviate flash-line defects in coining process

KAUST Repository

Xu, Jiangping

2013-04-01

We employ a finite element framework based on a dynamic explicit algorithm to predict the flash-line defects in the coining process. The distribution of the flash-line is obtained by building a radial friction work model at the element level. The elasto-plastic behavior of porous materials undergoing large deformations is considered where the constitutive level updates are the result of a local variational minimization problem. We study the material flow at different strokes of the die across the entire coining process and observe that the change in the flow direction of the material in the rim region may contribute to the flash lines. Our proposed framework shows that a part of the rim region in which the flash-line defects appear is consistent with the reported experimental results. We also propose a novel method of redesigning the rim geometry of the workpiece to alleviate the flash-line defects which also shows good agreement with experiments. © 2012 Elsevier Inc. All rights reserved.

Radiation-induced defect production in MgF2-Co crystals

International Nuclear Information System (INIS)

Nuritdinov, I.; Turdanov, K.; Mirinoyatova, N.M.; Rejterov, V.M.

1996-01-01

Impact of Co-admixture on structural radiation defects formation in the MgF 2 crystals is studied. It is found that the Co admixture facilitates the probability of generating the F- and m-type centers of radiation defects as well as creation of the F- and M-centers, perturbed by admixtures. The availability of structural defects leads in its turn to the admixture ions perturbation. It is reflected in the removal of prohibition on spin-prohibited transitions of the Co 2 + ions. It is assumed that creation of the M-centers is the main cause for removal of the prohibition on the spin-prohibited transitions. 8 refs., 4 figs

On-line monitoring of the crystallization process: relationship between crystal size and electrical impedance spectra

International Nuclear Information System (INIS)

Zhao, Yanlin; Yao, Jun; Wang, Mi

2016-01-01

On-line monitoring of crystal size in the crystallization process is crucial to many pharmaceutical and fine-chemical industrial applications. In this paper, a novel method is proposed for the on-line monitoring of the cooling crystallization process of L-glutamic acid (LGA) using electrical impedance spectroscopy (EIS). The EIS method can be used to monitor the growth of crystal particles relying on the presence of an electrical double layer on the charged particle surface and the polarization of double layer under the excitation of alternating electrical field. The electrical impedance spectra and crystal size were measured on-line simultaneously by an impedance analyzer and focused beam reflectance measurement (FBRM), respectively. The impedance spectra were analyzed using the equivalent circuit model and the equivalent circuit elements in the model can be obtained by fitting the experimental data. Two equivalent circuit elements, including capacitance ( C 2 ) and resistance ( R 2 ) from the dielectric polarization of the LGA solution and crystal particle/solution interface, are in relation with the crystal size. The mathematical relationship between the crystal size and the equivalent circuit elements can be obtained by a non-linear fitting method. The function can be used to predict the change of crystal size during the crystallization process. (paper)

Instrinsic defect energies of lithium hydride and lithium deuteride crystals

International Nuclear Information System (INIS)

Pandey, R.; Stoneham, A.M.

1985-01-01

A theoretical study has been made of the defect structure of lithium hydride and lithium deuteride. A potential model is obtained describing the statics and dynamics of these crystals. Intrinsic defect energies are calculated using the Harwell HADES program which is based on a generalised Mott-Littleton method. The results are in good agreement with the experimental data, and suggest that the vacancy and interstitial migration mechanisms of anions and cations are all comparable in their contribution to ionic conduction. (author)

Guiding, bending, and splitting of coupled defect surface modes in a surface-wave photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Gao, Zhen; Gao, Fei [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore 637371 (Singapore); Zhang, Baile, E-mail: blzhang@ntu.edu.sg [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore 637371 (Singapore); Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore 637371 (Singapore)

2016-01-25

We experimentally demonstrate a type of waveguiding mechanism for coupled surface-wave defect modes in a surface-wave photonic crystal. Unlike conventional spoof surface plasmon waveguides, waveguiding of coupled surface-wave defect modes is achieved through weak coupling between tightly localized defect cavities in an otherwise gapped surface-wave photonic crystal, as a classical wave analogue of tight-binding electronic wavefunctions in solid state lattices. Wave patterns associated with the high transmission of coupled defect surface modes are directly mapped with a near-field microwave scanning probe for various structures including a straight waveguide, a sharp corner, and a T-shaped splitter. These results may find use in the design of integrated surface-wave devices with suppressed crosstalk.

Guiding, bending, and splitting of coupled defect surface modes in a surface-wave photonic crystal

International Nuclear Information System (INIS)

Gao, Zhen; Gao, Fei; Zhang, Baile

2016-01-01

We experimentally demonstrate a type of waveguiding mechanism for coupled surface-wave defect modes in a surface-wave photonic crystal. Unlike conventional spoof surface plasmon waveguides, waveguiding of coupled surface-wave defect modes is achieved through weak coupling between tightly localized defect cavities in an otherwise gapped surface-wave photonic crystal, as a classical wave analogue of tight-binding electronic wavefunctions in solid state lattices. Wave patterns associated with the high transmission of coupled defect surface modes are directly mapped with a near-field microwave scanning probe for various structures including a straight waveguide, a sharp corner, and a T-shaped splitter. These results may find use in the design of integrated surface-wave devices with suppressed crosstalk

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Science.gov (United States)

Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

2010-04-01

Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

International Nuclear Information System (INIS)

Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

2013-01-01

Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

Chiral filtration-induced spin/valley polarization in silicene line defects

Science.gov (United States)

Ren, Chongdan; Zhou, Benhu; Sun, Minglei; Wang, Sake; Li, Yunfang; Tian, Hongyu; Lu, Weitao

2018-06-01

The spin/valley polarization in silicene with extended line defects is investigated according to the chiral filtration mechanism. It is shown that the inner-built quantum Hall pseudo-edge states with identical chirality can serve as a chiral filter with a weak magnetic field and that the transmission process is restrained/strengthened for chiral states with reversed/identical chirality. With two parallel line defects, which act as natural chiral filtration, the filter effect is greatly enhanced, and 100% spin/valley polarization can be achieved.

Use of the on-line Moessbauer effect as a contribution to the study of recoil defects in solids

International Nuclear Information System (INIS)

Jeandey, Christian

1974-01-01

This research thesis addresses the study of effects of nuclear reactions, also known as 'after-effects' such as atomic disorders resulted from atom recoil, but also possible chemical modifications. The author more particularly focuses of recoil defects. He reports a critical review of studies of structure defects (in pure metals, ordered alloys, ionic crystals) performed by using conventional resonance absorption, and then presents an analysis of results of the defect creation dynamics as it had been proposed by other authors. He also proposes an overview of the evolution and disappearance of defects during thermal treatments. After a review of experiments based on the on-line Moessbauer effect, the author reports the study of recoil effects in pure metals (iron, hafnium), in alloys (Fe 1-x Al x , FeGe 2 , cubic, monoclinic and hexagonal FeGe), and in organic complexes (ferrous oxalate, different types of hafnium chelate, hafnium oxide). He finally discusses the electronic properties of different types of iron and hafnium chelate in solid phase [fr

Flux line patterns in Bi2Sr2Ca1Cu2Ox

International Nuclear Information System (INIS)

Weiss, F.; Hardy, V.; Provost, J.; Ruyter, A.; Simon, C.

1994-01-01

Results of the defect influence on the flux line lattice in Bi 2 Sr 2 Ca 1 Cu 2 O x single crystals are presented. These crystals, non irradiated or irradiated at GANIL with heavy ions (Pb 56+ , 6 GeV) have been decorated with Ni particles in the superconducting state using the Bitter technique. The defects involved are columnar defects. Resulting decorated flux line patterns have been characterized using scanning electron microscopy and computer image analysis. Disorder of the decorated flux line networks has been found to be strongly dependent on the defect density, which results from the irradiation. In order to characterize this disorder, a method for determining elastic energy terms in the deformation of flux line patterns has been investigated. This method can be applied if Fourier transforms of the decorated flux line patterns exhibit distinct reflections. (orig.)

Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; Mørk, Jesper

2012-01-01

In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

Experimental study on slow flexural waves around the defect modes in a phononic crystal beam using fiber Bragg gratings

Energy Technology Data Exchange (ETDEWEB)

Chuang, Kuo-Chih, E-mail: chuangkc@zju.edu.cn; Zhang, Zhi-Qiang; Wang, Hua-Xin

2016-12-09

Highlights: • Slow waves around the defect modes in a phononic crystal beam are validated. • A fiber Bragg grating displacement sensing system can measure the defect mode. • The defect mode is analyzed by a transfer matrix method with a supercell technique. - Abstract: This work experimentally studies influences of the point defect modes on the group velocity of flexural waves in a phononic crystal Timoshenko beam. Using the transfer matrix method with a supercell technique, the band structures and the group velocities around the defect modes are theoretically obtained. Particularly, to demonstrate the existence of the localized defect modes inside the band gaps, a high-sensitivity fiber Bragg grating sensing system is set up and the displacement transmittance is measured. Slow propagation of flexural waves via defect coupling in the phononic crystal beam is then experimentally demonstrated with Hanning windowed tone burst excitations.

Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals

International Nuclear Information System (INIS)

Martovitsky, V. P.

2006-01-01

Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanumdoped Bi2201 single crystals with x = 0.7 and T c = 8-10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q 1 = 0.237b* + 0.277c* and q 2 = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70-to 80-A-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions

Optical defect modes in chiral liquid crystals

International Nuclear Information System (INIS)

Belyakov, V. A.; Semenov, S. V.

2011-01-01

An analytic approach to the theory of optical defect modes in chiral liquid crystals (CLCs) is developed. The analytic study is facilitated by the choice of the problem parameters. Specifically, an isotropic layer (with the dielectric susceptibility equal to the average CLC dielectric susceptibility) sandwiched between two CLC layers is studied. The chosen model allows eliminating the polarization mixing and reducing the corresponding equations to the equations for light of diffracting polarization only. The dispersion equation relating the defect mode (DM) frequency to the isotropic layer thickness and an analytic expression for the field distribution in the DM structure are obtained and the corresponding dependences are plotted for some values of the DM structure parameters. Analytic expressions for the transmission and reflection coefficients of the DM structure (CLC-defect layer-CLC) are presented and analyzed for nonabsorbing, absorbing, and amplifying CLCs. The anomalously strong light absorption effect at the DM frequency is revealed. The limit case of infinitely thick CLC layers is considered in detail. It is shown that for distributed feedback lasing in a defect structure, adjusting the lasing frequency to the DM frequency results in a significant decrease in the lasing threshold. The DM dispersion equations are solved numerically for typical values of the relevant parameters. Our approach helps clarify the physics of the optical DMs in CLCs and completely agrees with the corresponding results of the previous numerical investigations.

Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

International Nuclear Information System (INIS)

Han, Yang; Zhou, Jian; Dong, Jinming

2015-01-01

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS 2 . • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS 2 are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS 2 nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS 2 nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS 2 nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS 2 nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS 2 nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS 2 nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics

Tuning optical properties of opal photonic crystals by structural defects engineering

Science.gov (United States)

di Stasio, F.; Cucini, M.; Berti, L.; Comoretto, D.; Abbotto, A.; Bellotto, L.; Manfredi, N.; Marinzi, C.

2009-06-01

We report on the preparation and optical characterization of three dimensional colloidal photonic crystal (PhC) containing an engineered planar defect embedding photoactive push-pull dyes. Free standing polystyrene films having thickness between 0.6 and 3 mm doped with different dipolar chromophores were prepared. These films were sandwiched between two artificial opals creating a PhC structure with planar defect. The system was characterized by reflectance at normal incidence angle (R), variable angle transmittance (T) and photoluminescence spectroscopy (PL) Evidence of defect states were observed in T and R spectra which allow the light to propagate for selected frequencies within the pseudogap (stop band).

Lactation Defect in a Widely Used MMTV-Cre Transgenic Line of Mice

Science.gov (United States)

Yuan, Taichang; Wang, Yongping; Pao, Lily; Anderson, Steve M.; Gu, Haihua

2011-01-01

Background MMTV-Cre mouse lines have played important roles in our understanding about the functions of numerous genes in mouse mammary epithelial cells during mammary gland development and tumorigenesis. However, numerous studies have not included MMTV-Cre mice as controls, and many investigators have not indicated which of the different MMTV-Cre founder lines were used in their studies. Here, we describe a lactation defect that severely limits the use of one of the most commonly used MMTV-Cre founder lines. Methodology/Principal Findings To explore the role of protein tyrosine phosphatase Shp1 in mammary gland development, mice bearing the floxed Shp1 gene were crossed with MMTV-Cre mice and mammary gland development was examined by histological and biochemical techniques, while lactation competency was assessed by monitoring pup growth. Surprisingly, both the Shp1fl/+;MMTV-Cre and MMTV-Cre female mice displayed a severe lactation defect when compared to the Shp1 fl/+ control mice. Histological and biochemical analyses reveal that female mice expressing the MMTV-Cre transgene, either alone or in combination with floxed genes, exhibit defects in lobuloalveolar expansion, presence of large cytoplasmic lipid droplets in luminal alveolar epithelial cells postpartum, and precocious induction of involution. Using a PCR-based genotyping method, the three different founder lines can be distinguished, and we determined that the MMTV-Cre line A, the most widely used MMTV-Cre founder line, exhibits a profound lactation defect that limits its use in studies on mammary gland development. Conclusions/Significance The identification of a lactation defect in the MMTV-Cre line A mice indicates that investigators must use MMTV-Cre alone mice as control in studies that utilize Cre recombinase to excise genes of interest from mammary epithelial cells. Our results also suggest that previous results obtained in studies using the MMTV-Cre line A line should be re-evaluated if the

One-dimensional photonic crystals with highly Bi-substituted iron garnet defect in reflection polar geometry

International Nuclear Information System (INIS)

Mikhailova, T V; Berzhansky, V N; Karavainikov, A V; Shaposhnikov, A N; Prokopov, A R; Lyashko, S D

2016-01-01

It is represented the results of modelling of magnetooptical properties in reflection polar geometry of one-dimensional photonic crystal, in which highly Bi-substituted iron garnet defect of composition Bi 1.0 Y 0.5 Gd 1.5 Fe 4.2 A l0.8 O 12 / Bi 2.8 Y 0.2 Fe 5 Oi 2 is located between the dielectric Bragg mirrors (SiO 2 / TiO 2 ) m (were m is number of layer pairs) and buffer SiO 2 and gold top layers of different thicknesses is placed on structure. The modification of spectral line- shapes of microcavity and Tamm plasmon-polariton modes depending on m is found. (paper)

Splitting, linking, knotting, and solitonic escape of topological defects in nematic drops with handles.

Science.gov (United States)

Tasinkevych, Mykola; Campbell, Michael G; Smalyukh, Ivan I

2014-11-18

Topologically nontrivial field excitations, including solitonic, linked, and knotted structures, play important roles in physical systems ranging from classical fluids and liquid crystals, to electromagnetism, classic, and quantum field theories. These excitations can appear spontaneously during symmetry-breaking phase transitions. For example, in cosmological theories, cosmic strings may have formed knotted configurations influencing the Early Universe development, whereas in liquid crystals transient tangled defect lines were observed during isotropic-nematic transitions, eventually relaxing to defect-free states. Knotted and solitonic fields and defects were also obtained using optical manipulation, complex-shaped colloids, and frustrated cholesterics. Here we use confinement of nematic liquid crystal by closed surfaces with varied genus and perpendicular boundary conditions for a robust control of appearance and stability of such field excitations. Theoretical modeling and experiments reveal structure of defect lines as a function of the surface topology and material and geometric parameters, establishing a robust means of controlling solitonic, knotted, linked, and other field excitations.

Macroscopic and microscopic defects and nonlinear optical properties of KH{sub 2}PO{sub 4} crystals with embedded TiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Grachev, Valentin G.; Vrable, Ian A.; Malovichko, Galina I. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Pritula, Igor M.; Bezkrovnaya, Olga N.; Kosinova, Anna V. [Institute for Single Crystals, NAS of Ukraine, Kharkiv (Ukraine); Yatsyna, Vasyl O.; Gayvoronsky, Vladimir Ya. [Institute of Physics, NAS of Ukraine, 03680 Kiev (Ukraine)

2012-07-01

Results from the successful growth of high quality KH{sub 2}PO{sub 4} (KDP) crystals with incorporated TiO{sub 2} anatase nanoparticles and the characterization of these crystals using several complementary methods are presented. The study allowed the nature and distribution of macroscopic and microscopic defects in the KDP:TiO{sub 2} crystals to be clarified. The relationship between these defects and the distribution of TiO{sub 2} nanoparticles, and the influence of incorporated nanoparticles on the nonlinear optical properties of composite crystals in comparison with pure crystals were also elucidated. Visual observations, transmission and scanning electron microscopy have shown that the anatase nanoparticles were captured mainly by the pyramidal growth sector and, to a considerably lesser extent, by the prismatic growth sector. Energy dispersive x-ray analysis was able to confirm that the growth layer stacks contain the TiO{sub 2} particles. Fourier transformation infrared spectra have clearly shown the presence of an absorption band at about 800 cm{sup -1} in both KDP:TiO{sub 2} and TiO{sub 2}, and the disappearance of the band, associated with hydroxyl OH{sup -} groups on the TiO{sub 2} surface in KDP:TiO{sub 2}. Significant variation in the imaginary and real parts of the cubic nonlinear optical susceptibilities and refractive index changes at continuous wave excitation were found in prism and pyramid parts of pure KDP and KDP:TiO{sub 2} samples. Deciphering complicated electron paramagnetic resonance spectra in KDP:TiO{sub 2} and comparison with published data permitted the identification of paramagnetic defects along with their associated g-factors and zero-field splitting parameters (in some cases for the first time). It was found that the dominant lines belong to four different centers Fe{sub A}{sup 3+}, Fe{sub B}{sup 3+}, Cr{sub R}{sup 3+}, and Cr{sub GB}{sup 3+}. From analysis of line intensities it was concluded that the concentration of intrinsic

Magnonic Crystal as a Delay Line for Low-Noise Auto-Oscillator

Science.gov (United States)

2015-05-12

Magnonic crystal as a delay line for low-noise auto-oscillator Elena Bankowski and Thomas Meitzler U.S. Army TARDEC, Warren, Michigan 48397, USA...authors propose to use the magnonic crystal patterned on the YIG magnetic film as an efficient delay line in the feedback loop of tunable auto-oscillator...increasing the thickness of such delay line as compare to the YIG film with no pattern. In turn, use of this magnonic crystal opens a way to improve

Defect studies of ZnO single crystals electrochemically doped with hydrogen

Science.gov (United States)

Čížek, J.; Žaludová, N.; Vlach, M.; Daniš, S.; Kuriplach, J.; Procházka, I.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Gemma, R.; Kirchheim, R.; Pundt, A.

2008-03-01

Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3at.% H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to ˜30at.%) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed.

Optical trapping of colloidal particles and measurement of the defect line tension and colloidal forces in a thermotropic nematic liquid crystal

International Nuclear Information System (INIS)

Smalyukh, I.I.; Kuzmin, A.N.; Kachynski, A.V.; Prasad, P.N.; Lavrentovich, O.D.

2005-01-01

We demonstrate optical trapping and manipulation of transparent microparticles suspended in a thermotropic nematic liquid crystal with low birefringence. We employ the particle manipulation to measure line tension of a topologically stable disclination line and to determine colloidal interaction of particles with perpendicular surface anchoring of the director. The three-dimensional director fields and positions of the particles manipulated by laser tweezers are visualized by fluorescence confocal polarizing microscopy

Photonic crystal Fano lasers and Fano switches

DEFF Research Database (Denmark)

Mørk, Jesper; Yu, Yi; Bekele, Dagmawi Alemayehu

2017-01-01

We show that Fano resonances can be realized in photonic crystal membrane structures by coupling line-defect waveguides and point-defect nanocavities. The Fano resonance can be exploited to realize optical switches with very small switching energy, as well as Fano lasers, that can generate short...

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Science.gov (United States)

Sabanskis, A.; Virbulis, J.

2018-05-01

Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

Optical properties of a defective one-dimensional photonic crystal containing graphene nanaolayers

International Nuclear Information System (INIS)

Entezar, S. Roshan; Saleki, Z.; Madani, A.

2015-01-01

The transmission properties of a defective one-dimensional photonic crystal containing graphene nanolayers have been investigated using the transfer matrix method. It is shown that two kinds of the defect modes can be found in the band gaps of the structure. One kind is the traditional defect mode which is created in the Bragg gaps of the structure and is due to the breaking of the periodicity of the dielectric lattice. The other one is created in the graphene induced band gap. Such a defect mode which we call it the graphene induced defect mode is due to the breaking of the periodicity of the graphene lattice. However, our investigations reveal that only in the case of wide defect layers one can obtain the graphene induced defect modes. The effects of many parameters such as the incident angle, the state of polarization and the chemical potential of the graphene nanolayers on the properties of the graphene induced defect modes are discussed. Moreover, the possibility of external control of the graphene induced defect modes using a gate voltage is shown.

Emulation of two-dimensional photonic crystal defect modes in a photonic crystal with a three-dimensional photonic band gap

Energy Technology Data Exchange (ETDEWEB)

Povinelli, M. L.; Johnson, Steven G.; Fan, Shanhui; Joannopoulos, J. D.

2001-08-15

Using numerical simulations, we demonstrate the construction of two-dimensional- (2D-) like defect modes in a recently proposed 3D photonic crystal structure. These modes, which are confined in all three dimensions by a complete photonic band gap, bear a striking similarity to those in 2D photonic crystals in terms of polarization, field profile, and projected band structures. It is expected that these results will greatly facilitate the observation of widely studied 2D photonic-crystal phenomena in a realistic, 3D physical system.

Emulation of two-dimensional photonic crystal defect modes in a photonic crystal with a three-dimensional photonic band gap

International Nuclear Information System (INIS)

Povinelli, M. L.; Johnson, Steven G.; Fan, Shanhui; Joannopoulos, J. D.

2001-01-01

Using numerical simulations, we demonstrate the construction of two-dimensional- (2D-) like defect modes in a recently proposed 3D photonic crystal structure. These modes, which are confined in all three dimensions by a complete photonic band gap, bear a striking similarity to those in 2D photonic crystals in terms of polarization, field profile, and projected band structures. It is expected that these results will greatly facilitate the observation of widely studied 2D photonic-crystal phenomena in a realistic, 3D physical system

Quantum depinning of flux lines from columnar defects

International Nuclear Information System (INIS)

Chudnovsky, E.M.; Ferrera, A.; Vilenkin, A.

1995-01-01

The depinning of a flux line from a columnar defect is studied within the path-integral approach. Instantons of the quantum field theory in 1+1 dimensions are computed for the flux line whose dynamics is dominated by the Magnus force. The universal temperature dependence of the decay rate in the proximity of the critical current is obtained. This problem provides an example of macroscopic quantum tunneling, which is accessible to the direct comparison between theory and experiment

Subsurface defects structural evolution in nano-cutting of single crystal copper

International Nuclear Information System (INIS)

Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Sun, Yazhou; Guo, Yongbo; Liang, Yingchun

2015-01-01

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated

Subsurface defects structural evolution in nano-cutting of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Yazhou [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liang, Yingchun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-07-30

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated.

Defect production at exciton decay in ionic crystals

International Nuclear Information System (INIS)

Lushchik, Ch.B.

1984-01-01

On the example of alkali halide crystals experimentally detected phenomenon of structural point defect production in wide-gap nonmetallic solids at low-temperature radiationless decay of self-localizing excitons and recombination of electrons with self-localized holes is considered. Factors promoting radiationless transformation of electron excitations to not small oscillations of many atoms (heat release), but to separate ion large shifts, that determine one of the most important mechanisms of radiation instability of solids, used, in particular, for data recording, are discussed

Dislocation-defect interactions and mechanical properties of crystals

International Nuclear Information System (INIS)

Granato, A.V.

1975-01-01

The influence of dislocation-defect interactions on mechanical properties of crystals is reviewed. Interactions are separated into those producing pinning and those producing viscous drag. Deformation behavior is classified according to the strength of the drag. For small drag, inertial effects become important. For intermediate drag, traditional theories resting on rate theory treatments become applicable. For large drag, viscoelastic behavior is obtained. Measurements are examined for information concerning the basic nature of different sources of short and long range pinning and of drag

Morphological Analysis of White Cement Clinker Minerals: Discussion on the Crystallization-Related Defects

Directory of Open Access Journals (Sweden)

Mohamed Benmohamed

2016-01-01

Full Text Available The paper deals with a formation of artificial rock (clinker. Temperature plays the capital role in the manufacturing process. So, it is useful to analyze a poor clinker to identify the different phases and defects associated with their crystallization. X-ray fluorescence spectroscopy was used to determine the clinker’s chemical composition. The amounts of the mineralogical phases are measured by quantitative XRD analysis (Rietveld. Scanning electron microscopy (SEM was used to characterize the main phases of white Portland cement clinker and the defects associated with the formation of clinker mineral elements. The results of a study which focused on the identification of white clinker minerals and defects detected in these noncomplying clinkers such as fluctuation of the amount of the main phases (alite (C3S and belite (C2S, excess of the free lime, occurrence of C3S polymorphs, and occurrence of moderately-crystallized structures are presented in this paper.

Point defects and magnetic properties of neutron irradiated MgO single crystal

Directory of Open Access Journals (Sweden)

Mengxiong Cao

2017-05-01

Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

Electronic and magnetic properties of MoS{sub 2} nanoribbons with sulfur line vacancy defects

Energy Technology Data Exchange (ETDEWEB)

Han, Yang [Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhou, Jian [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Dong, Jinming, E-mail: jdong@nju.edu.cn [Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

2015-08-15

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS{sub 2}. • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS{sub 2} are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS{sub 2} nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS{sub 2} nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS{sub 2} nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS{sub 2} nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS{sub 2} nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS{sub 2} nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics.

Reassignment of oxygen-related defects in CdTe and CdSe

International Nuclear Information System (INIS)

Bastin, Dirk

2015-01-01

This thesis reassigns the O_T_e-V_C_d complex in CdTe and the O_S_e-V_C_d complex in CdSe to a sulfur-dioxygen complex SO_2*, and the O_C_d defect in CdSe to a V_C_dH_2 complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν_1) and 1108.3 cm"-"1 (ν_2) previously assigned to an O_T_e-V_C_d complex are detected in CdTe single crystals doped with CdSO_4 powder. Five weaker additional absorption lines accompanying ν_1 and ν_2 could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO_2* having two configurations labeled ν_1 and ν_2. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν_1 and ν_2, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ_1), 1107.5 (γ_2), and 1126.3 cm"-"1 (γ_3) previously attributed to an O_S_e-V_C_d complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO_2* having three configurations γ_1, γ_2, and γ_3. IR absorption measurements with uniaxial stress applied to the CdSe crystal yield a monoclinic C_1_h symmetry for γ_1 and γ_2. The SO_2* complex is stable up to 600 C. This thesis assigns the ν-lines in

Optical transmission properties of an anisotropic defect cavity in one-dimensional photonic crystal

Science.gov (United States)

Ouchani, Noama; El Moussaouy, Abdelaziz; Aynaou, Hassan; El Hassouani, Youssef; El Boudouti, El Houssaine; Djafari-Rouhani, Bahram

2018-01-01

We investigate theoretically the possibility to control the optical transmission in the visible and infrared regions by a defective one dimensional photonic crystal formed by a combination of a finite isotropic superlattice and an anisotropic defect layer. The Green's function approach has been used to derive the reflection and the transmission coefficients, as well as the densities of states of the optical modes. We evaluate the delay times of the localized modes and we compare their behavior with the total densities of states. We show that the birefringence of an anisotropic defect layer has a significant impact on the behavior of the optical modes in the electromagnetic forbidden bands of the structure. The amplitudes of the defect modes in the transmission and the delay time spectrum, depend strongly on the position of the cavity layer within the photonic crystal. The anisotropic defect layer induces transmission zeros in one of the two components of the transmission as a consequence of a destructive interference of the two polarized waves within this layer, giving rise to negative delay times for some wavelengths in the visible and infrared light ranges. This property is a typical characteristic of the anisotropic photonic layer and is without analogue in their counterpart isotropic defect layers. This structure offers several possibilities for controlling the frequencies, transmitted intensities and the delay times of the optical modes in the visible and infrared regions. It can be a good candidate for realizing high-precision optical filters.

Anisotropic diffusion of point defects in a two-dimensional crystal of streptavidin observed by high-speed atomic force microscopy

International Nuclear Information System (INIS)

Yamamoto, Daisuke; Uchihashi, Takayuki; Kodera, Noriyuki; Ando, Toshio

2008-01-01

The diffusion of individual point defects in a two-dimensional streptavidin crystal formed on biotin-containing supported lipid bilayers was observed by high-speed atomic force microscopy. The two-dimensional diffusion of monovacancy defects exhibited anisotropy correlated with the two crystallographic axes in the orthorhombic C 222 crystal; in the 2D plane, one axis (the a-axis) is comprised of contiguous biotin-bound subunit pairs whereas the other axis (the b-axis) is comprised of contiguous biotin-unbound subunit pairs. The diffusivity along the b-axis is approximately 2.4 times larger than that along the a-axis. This anisotropy is ascribed to the difference in the association free energy between the biotin-bound subunit-subunit interaction and the biotin-unbound subunit-subunit interaction. The preferred intermolecular contact occurs between the biotin-unbound subunits. The difference in the intermolecular binding energy between the two types of subunit pair is estimated to be approximately 0.52 kcal mol -1 . Another observed dynamic behavior of point defects was fusion of two point defects into a larger defect, which occurred much more frequently than the fission of a point defect into smaller defects. The diffusivity of point defects increased with increasing defect size. The fusion and the higher diffusivity of larger defects are suggested to be involved in the mechanism for the formation of defect-free crystals

Multiscale Modeling of Point and Line Defects in Cubic Lattices

National Research Council Canada - National Science Library

Chung, P. W; Clayton, J. D

2007-01-01

.... This multiscale theory explicitly captures heterogeneity in microscopic atomic motion in crystalline materials, attributed, for example, to the presence of various point and line lattice defects...

Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

Science.gov (United States)

Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

2018-02-01

This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

Radiation defect production in quartz crystals with various structure perfectness degree; Radiatsionnoe defektoobrazovanie v kristallakh kvartsa s razlichnoj stepen`yu sovershenstva struktury

Energy Technology Data Exchange (ETDEWEB)

Khushvakov, O B

1992-01-01

Radiation defects production processes in pure and doped quartz crystals with various structure defectness, caused by preliminary irradiation with neutrons, protons, deuterons and {alpha}-particles, during various electron excitation densities were investigated. The distribution of colour centres along the thickness of irradiated quartz crystals was measured. It was supposed that colour centres are produced on account of inelastic energy losses as the result of collective decay of two or more interacting excitons. It was shown that in quartz crystals under the actions of protons with overthreshold energy 18 MeV and electrons with subthreshold energy 100 keV the same structure defects are formed. It was established that radiation defect production process has two stages. The first stage reveals radiation defects produced by preliminary irradiation. The second one reveals additional intrinsic defects formed under the action of gamma-rays and electrons. The probability dependence of defect production on neutron fluence and masses of incident particles was studied. It was supposed that the creation of additional defects in preliminary irradiated crystals is due to non-radiative decay of electron excitations near radiation-induced defects. It was shown that increase of impurity concentration leads to rate growth of accumulation of radiation induced defects. (A.A.D.) 15 refs. 4 figs.

Relation between the concentration of defects and the temperature on a crystal

Energy Technology Data Exchange (ETDEWEB)

Adorno, A T.V.; Cilense, M [UNESP, Araraquara (Brazil). Inst. de Quimica; Garlipp, W [Sao Paulo Univ., Sao Carlos (Brazil). Escola de Engenharia

1982-01-01

Following the basic thermodynamics principles, the relation between the concentration of defects and the temperature on a crystal was established. In the case of vacancies, the relation between the changes in the resistivity and the absolute quench temperature was also obtained.

Shift and broadening of emission lines in Nd 3: YAG laser crystal ...

Indian Academy of Sciences (India)

Home; Journals; Pramana – Journal of Physics; Volume 86; Issue 6. Shift and broadening of emission lines in Nd3+:YAG laser crystal influenced by input energy. POURMAND SEYED EBRAHIM REZAEI ... Keywords. Nd3+:YAG crystal; heat generation; three-level emission lines; four-level emission lines; input energy.

High temperature defect equilibrium in ZnS:Cu single crystals

Energy Technology Data Exchange (ETDEWEB)

Lott, K.; Shinkarenko, S.; Tuern, L.; Nirk, T.; Oepik, A. [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia); Kallavus, U. [Centre for Materials Research, Tallinn University of Technology, Tallinn (Estonia); Gorokhova, E. [Scientific Research and Technological Institute of Optical Material Science, S. I. Vavilov State Optical Institute, All-Russia Science Center, St. Petersburg (Russian Federation); Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Moscow (Russian Federation)

2010-07-15

High temperature investigations in ZnS:Cu crystals were performed under defined conditions. High temperature electrical conductivity and copper solubility data were obtained under different component vapour pressures and under different sample temperatures. The experimental data at sulphur vapour pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder. Compensating association of copper with this antistructure defect may occur. Antistructure disorder disappears with increasing of zinc vapour pressure and with increasing role of holes in bipolar conductivity. The method for solving the system of quasichemical reactions without approximation was used to model high temperature defect equilibrium. This model contains antistructure disorder and copper solubility limitation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

E-line: A new crystal collimator beam line for source size measurements at CHESS

International Nuclear Information System (INIS)

White, Jeffrey A.; Revesz, Peter; Finkelstein, Ken

2007-01-01

A new X-ray beam line has been constructed at cornell high energy synchrotron source (CHESS) to measure the vertical and horizontal source size of the positron particle beam. The cornell laboratory of elementary particle physics (LEPP) operates the storage ring (CESR) for X-ray generation for the CHESS user community by circulating electrons and their antimatter counterpart positrons in counter-rotating beams. As the laboratory reduces the emittances of particle beams to increase X-ray brilliance, there has been an increasing need for diagnostic tools to measure and monitor source size. A beam line front end that accesses the positron synchrotron light has been fitted with an experimental chamber and apparatus of compact design capable of horizontal and vertical source size measurement using the 'crystal collimator' technique, and an additional setup for vertical beam position monitoring using a luminescence-based X-ray video beam position monitoring system. The crystal collimators each consist of two Si(2 2 0) crystals in a dispersive (+,+) arrangement that diffract X-rays to a fluorescent material coated on a view port observed with a CCD camera. Measurements of the positron vertical beam size using the crystal collimation method at E-line are compared with measurements of visible synchrotron light at a remotely located dedicated port on the storage ring

On the Enthalpy and Entropy of Point Defect Formation in Crystals

Science.gov (United States)

Kobelev, N. P.; Khonik, V. A.

2018-03-01

A standard way to determine the formation enthalpy H and entropy S of point defect formation in crystals consists in the application of the Arrhenius equation for the defect concentration. In this work, we show that a formal use of this method actually gives the effective (apparent) values of these quantities, which appear to be significantly overestimated. The underlying physical reason lies in temperature-dependent formation enthalpy of the defects, which is controlled by temperature dependence of the elastic moduli. We present an evaluation of the "true" H- and S-values for aluminum, which are derived on the basis of experimental data by taking into account temperature dependence of the formation enthalpy related to temperature dependence of the elastic moduli. The knowledge of the "true" activation parameters is needed for a correct calculation of the defect concentration constituting thus an issue of major importance for different fundamental and application issues of condensed matter physics and chemistry.

Study of reticular defects in V3Si (A15 structure)

International Nuclear Information System (INIS)

Ben Lamine, Abdelmottaleb

1980-01-01

The A15 crystal structure is that of superconductive compounds with high critical temperature. This research thesis aims at studying its possible reticular defects. In a first part, the author presents this structure and more particularly its crystallographic properties, reports the indexing of electronic diffraction diagrams (point diagrams and line diagrams of Kikuchi) in the case of V 3 Si. Then, after having described the sample preparation technique, the author reports the study of reticular defects by high voltage electronic microscopy on a raw V 3 Si crystal. The existence of a specific defect is highlighted and the crystallographic study of this defect is reported. It has been performed by means of computer-based simulation of contrast (TWODIS software). Results are then discussed

The method of diagnosis and classification of the gingival line defects of the teeth hard tissues

Directory of Open Access Journals (Sweden)

Olena Bulbuk

2017-06-01

Full Text Available For solving the problem of diagnosis and treatment of hard tissue defects the significant role belongs to the choice of tactics for dental treatment of hard tissue defects located in the gingival line of any tooth. This work aims to study the problems of diagnosis and classification of gingival line defects of the teeth hard tissues. That will contribute to the objectification of differentiated diagnostic and therapeutic approaches in the dental treatment of various clinical variants of these defects localization. The objective of the study – is to develop the anatomical-functional classification for differentiated estimation of hard tissue defects in the gingival part, as the basis for the application of differential diagnostic-therapeutic approaches to the dental treatment of hard tissue defects disposed in the gingival part of any tooth. Materials and methods of investigation: There was conducted the examination of 48 patients with hard tissue defects located in the gingival part of any tooth. To assess the magnitude of gingival line destruction the periodontal probe and X-ray examination were used. Results. The result of the performed research the classification of the gingival line defects of the hard tissues was offered using exponent power. The value of this indicator is equal to an integer number expressed in millimeters of distance from the epithelial attachment to the cavity’s bottom of defect. Conclusions. The proposed classification fills an obvious gap in academic representations about hard tissue defects located in the gingival part of any tooth. Also it offers the prospects of consensus on differentiated diagnostic-therapeutic approaches in different clinical variants of location.  This classification builds methodological “bridge of continuity” between therapeutic and prosthetic dentistry in the field of treatment of the gingival line defects of dental hard tissues.

Reassignment of oxygen-related defects in CdTe and CdSe

Energy Technology Data Exchange (ETDEWEB)

Bastin, Dirk

2015-05-22

This thesis reassigns the O{sub Te}-V{sub Cd} complex in CdTe and the O{sub Se}-V{sub Cd} complex in CdSe to a sulfur-dioxygen complex SO{sub 2}*, and the O{sub Cd} defect in CdSe to a V{sub Cd}H{sub 2} complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν{sub 1}) and 1108.3 cm{sup -1} (ν{sub 2}) previously assigned to an O{sub Te}-V{sub Cd} complex are detected in CdTe single crystals doped with CdSO{sub 4} powder. Five weaker additional absorption lines accompanying ν{sub 1} and ν{sub 2} could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO{sub 2}* having two configurations labeled ν{sub 1} and ν{sub 2}. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν{sub 1} and ν{sub 2}, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ{sub 1}), 1107.5 (γ{sub 2}), and 1126.3 cm{sup -1} (γ{sub 3}) previously attributed to an O{sub Se}-V{sub Cd} complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO{sub 2}* having three configurations γ{sub 1}, γ{sub 2}, and γ{sub 3}. IR absorption measurements with uniaxial stress applied to the

Effect of defects induced by doping and fast neutron irradiation on the thermal properties of lithium ammonium sulphate crystals

International Nuclear Information System (INIS)

Kandil, S.H.; Ramadan, T.A.; Darwish, M.M.; Kassem, M.E.; El-Khatib, A.M.

1994-01-01

Structural defects were introduced in lithium ammonium sulphate crystals (LAS) either in the process of crystal growth (in the form of foreign ions) or by neutron irradiation. The effect of such defects on the thermal properties of LAS crystals was studied in the temperature range 300-500 K. It was assumed that the doped LAS crystals are composed of a two-phase system having different thermal parameters in each phase. The specific heat at constant pressure, C p , of irradiated samples was found to decrease with increasing irradiation doses. The thermal expansion of LAS crystals was found to be dependent on neutron irradiation, and was attributed to two processes: the release of new species and the trapping process. (author)

On-line defected fuel monitoring using GFP data

International Nuclear Information System (INIS)

Livingstone, S.; Lewis, B.J.

2008-01-01

This paper describes the initial development of an on-line defected fuel diagnostic tool. The tool is based on coolant activity, and uses a quantitative and qualitative approach from existing mechanistic fission product release models, and also empirical rules based on commercial and experimental experience. The model departs from the usual methodology of analyzing steady-state fission product coolant activities, and instead uses steady-state fission product release rates calculated from the transient coolant activity data. An example of real-time defected fuel analysis work is presented using a prototype of this tool with station data. The model is in an early developmental stage, and this paper demonstrates the promising potential of this technique. (author)

Antisite defects in γ-irradiated InP and InP crystals

International Nuclear Information System (INIS)

Aliev, M.I.; Rashidova, Sh.Sh.; Gusejnova, M.A.; Gadzhieva, N.N.

2008-01-01

By means of TL and IR spectroscopy methods, it has been found that γ-irradiation of lnP single crystals doped with Sn leads to TL peak appearance at 230 K with activation energy E a =0.19 eV. This peak is connected with vacancy-antisite donor-type doped defect complex formation under irradiation [ru

Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

Science.gov (United States)

Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2013-02-01

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

E-line: A new crystal collimator beam line for source size measurements at CHESS

Energy Technology Data Exchange (ETDEWEB)

White, Jeffrey A. [CHESS, Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850-8001 (United States)], E-mail: jaw7@cornell.edu; Revesz, Peter; Finkelstein, Ken [CHESS, Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850-8001 (United States)

2007-11-11

A new X-ray beam line has been constructed at cornell high energy synchrotron source (CHESS) to measure the vertical and horizontal source size of the positron particle beam. The cornell laboratory of elementary particle physics (LEPP) operates the storage ring (CESR) for X-ray generation for the CHESS user community by circulating electrons and their antimatter counterpart positrons in counter-rotating beams. As the laboratory reduces the emittances of particle beams to increase X-ray brilliance, there has been an increasing need for diagnostic tools to measure and monitor source size. A beam line front end that accesses the positron synchrotron light has been fitted with an experimental chamber and apparatus of compact design capable of horizontal and vertical source size measurement using the 'crystal collimator' technique, and an additional setup for vertical beam position monitoring using a luminescence-based X-ray video beam position monitoring system. The crystal collimators each consist of two Si(2 2 0) crystals in a dispersive (+,+) arrangement that diffract X-rays to a fluorescent material coated on a view port observed with a CCD camera. Measurements of the positron vertical beam size using the crystal collimation method at E-line are compared with measurements of visible synchrotron light at a remotely located dedicated port on the storage ring.

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO4

International Nuclear Information System (INIS)

Malinowska, A.; Lefeld-Sosnowska, M.; Wieteska, K.; Wierzchowski, W.; Pajaczkowska, A.; Graeff, W.

2008-01-01

SrLaGaO 4 single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown SrLaGaO 4 crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in f100g lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling. (authors)

Effect of defects induced by doping and fast neutron irradiation on the thermal properties of lithium ammonium sulphate crystals

Energy Technology Data Exchange (ETDEWEB)

Kandil, S.H.; Ramadan, T.A.; Darwish, M.M. (Alexandria Univ. (Egypt). Dept. of Materials Science); Kassem, M.E.; El-Khatib, A.M. (Alexandria Univ. (Egypt). Dept. of Physics)

1994-05-01

Structural defects were introduced in lithium ammonium sulphate crystals (LAS) either in the process of crystal growth (in the form of foreign ions) or by neutron irradiation. The effect of such defects on the thermal properties of LAS crystals was studied in the temperature range 300-500 K. It was assumed that the doped LAS crystals are composed of a two-phase system having different thermal parameters in each phase. The specific heat at constant pressure, C[sub p], of irradiated samples was found to decrease with increasing irradiation doses. The thermal expansion of LAS crystals was found to be dependent on neutron irradiation, and was attributed to two processes: the release of new species and the trapping process. (author).

Stabilization of primary mobile radiation defects in MgF{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Lisitsyn, V.M. [National Research Tomsk Polytechnic University, pr. Lenina 30, Tomsk 634050 (Russian Federation); Lisitsyna, L.A. [State University of Architecture and Building, pl. Solyanaya 2, Tomsk 634003 (Russian Federation); Popov, A.I., E-mail: popov@ill.fr [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Kotomin, E.A. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Abuova, F.U.; Akilbekov, A. [L.N. Gumilyov Eurasian National University, 3 Munaitpasova Str., Astana (Kazakhstan); Maier, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany)

2016-05-01

Non-radiative decay of the electronic excitations (excitons) into point defects (F–H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF{sub 2} and <0.001% in fluorides MeF{sub 2} (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF{sub 2} crystals with a focus on the H center stabilization in the form of the interstitial F{sub 2} molecules which is supported by presented experimental data.

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals

International Nuclear Information System (INIS)

Pagava, T. A.

2006-01-01

The n-Si single crystals are studied in order to gain insight into the effect of the temperature of irradiation T irr on the defect-production process. The samples under study were irradiated with 2-MeV electrons in the range T irr = 20-400 deg. C. Irradiated crystals were annealed isochronously in the temperature range from 80 to 600 deg. C. Measurements were carried out by the Hall method in the temperature range from 77 to 300 K. It is shown that the efficiency of introduction of radiation defects with a high thermal stability (T ann ≥ 350 deg. C) attains a maximum at T irr = 150 deg. C. The observed effect is accounted for by formation of multivacancy defects PV 2 on the basis of ionized E centers and nonequilibrium vacancies

Investigation of lactose crystallization process during condensed milk cooling using native vacuum-crystallizer

Directory of Open Access Journals (Sweden)

E. I. Dobriyan

2016-01-01

Full Text Available One of the most general defects of condensed milk with sugar is its consistency heterogeneity – “candying”. The mentioned defect is conditioned by the presence of lactose big crystals in the product. Lactose crystals size up to 10 µm is not organoleptically felt. The bigger crystals impart heterogeneity to the consistency which can be evaluated as “floury”, “sandy”, “crunch on tooth”. Big crystals form crystalline deposit on the can or industrial package bottom in the form of thick layer. Industrial processing of the product with the defective process of crystallization results in the expensive equipment damage of the equipment at the confectionary plant accompanied with heavy losses. One of the factors influencing significantly lactose crystallization is the product cooling rate. Vacuum cooling is the necessary condition for provision of the product consistency homogeneity. For this purpose the vacuum crystallizers of “Vigand” company, Germany, are used. But their production in the last years has been stopped. All-Russian dairy research institute has developed “The references for development of the native vacuum crystallizer” according to which the industrial model has been manufactured. The produced vacuum – crystallizer test on the line for condensed milk with sugar production showed that the product cooling on the native vacuum-crystallizer guarantees production of the finished product with microstructure meeting the requirements of State standard 53436–2009 “Canned Milk. Milk and condensed cream with sugar”. The carried out investigations evidences that the average lactose crystals size in the condensed milk with sugar cooled at the native crystallizer makes up 6,78 µm. The granulometric composition of the product crystalline phase cooled at the newly developed vacuum-crystallizer is completely identical to granulometric composition of the product cooled at “Vigand” vacuum-crystallizer.

A quantum-chemical study of oxygen-vacancy defects in PbTiO3 crystals

International Nuclear Information System (INIS)

Stashans, Arvids; Serrano, Sheyla; Medina, Paul

2006-01-01

Investigation of an oxygen vacancy and F center in the cubic and tetragonal lattices of PbTiO 3 crystals is done by means of quantum-chemical simulations. Displacements of defect-surrounding atoms, electronic and optical properties, lattice relaxation energies and some new effects due to the defects presence are reported and analyzed. A comparison with similar studies is made and conclusions are drawn on the basis of the obtained results

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

Engineering a light-emitting planar defect within three-dimensional photonic crystals

Directory of Open Access Journals (Sweden)

Guiqiang Liu, Yan Chen and Zhiqing Ye

2009-01-01

Full Text Available Sandwich structures, constructed from a planar defect of rhodamine-B (RhB-doped titania (TiO2 and two photonic crystals, were synthesized via the self-assembly method combined with spin-coating. The modification of the spontaneous emission of RhB molecules in such structures was investigated experimentally. The spontaneous emission of RhB-doped TiO2 film with photonic crystals was reduced by a factor of 5.5 over a large bandwidth of 13% of the first-order Bragg diffraction frequency when compared with that of RhB-doped TiO2 film without photonic crystals. The angular dependence of the modification and the photoluminescence lifetime of RhB molecules demonstrate that the strong and wide suppression of the spontaneous emission of the RhB molecules is due to the presence of the photonic band gap.

Engineering a light-emitting planar defect within three-dimensional photonic crystals

Science.gov (United States)

Liu, Guiqiang; Chen, Yan; Ye, Zhiqing

2009-01-01

Sandwich structures, constructed from a planar defect of rhodamine-B (RhB)-doped titania (TiO2) and two photonic crystals, were synthesized via the self-assembly method combined with spin-coating. The modification of the spontaneous emission of RhB molecules in such structures was investigated experimentally. The spontaneous emission of RhB-doped TiO2 film with photonic crystals was reduced by a factor of 5.5 over a large bandwidth of 13% of the first-order Bragg diffraction frequency when compared with that of RhB-doped TiO2 film without photonic crystals. The angular dependence of the modification and the photoluminescence lifetime of RhB molecules demonstrate that the strong and wide suppression of the spontaneous emission of the RhB molecules is due to the presence of the photonic band gap. PMID:27877309

Topological defect formation and spontaneous symmetry breaking in ion Coulomb crystals.

Science.gov (United States)

Pyka, K; Keller, J; Partner, H L; Nigmatullin, R; Burgermeister, T; Meier, D M; Kuhlmann, K; Retzker, A; Plenio, M B; Zurek, W H; del Campo, A; Mehlstäubler, T E

2013-01-01

Symmetry breaking phase transitions play an important role in nature. When a system traverses such a transition at a finite rate, its causally disconnected regions choose the new broken symmetry state independently. Where such local choices are incompatible, topological defects can form. The Kibble-Zurek mechanism predicts the defect densities to follow a power law that scales with the rate of the transition. Owing to its ubiquitous nature, this theory finds application in a wide field of systems ranging from cosmology to condensed matter. Here we present the successful creation of defects in ion Coulomb crystals by a controlled quench of the confining potential, and observe an enhanced power law scaling in accordance with numerical simulations and recent predictions. This simple system with well-defined critical exponents opens up ways to investigate the physics of non-equilibrium dynamics from the classical to the quantum regime.

Two-Dimentional Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Søndergaard, Thomas; Dridi, Kim

1999-01-01

possible a novel class of optical microcavities, whereas line defects make possible a novel class of waveguides. In this paper we will analyze two-dimensional photonic crystal waveguides based on photonic crystals with rods arranged on a triangular and a square lattice using a plane-wave expansion method......In the recent years a new class of periodic high-index contrast dielectric structures, known as photonic bandgap structures, has been discovered. In these structures frequency intervals, known as photonic bandgaps, where propagation of electromagnetic waves is not allowed, exist due to the periodic...... dielectric function. This is analogous to semiconductors, where electronic bandgaps exist due to the periodic arrangement of atoms. As is also the case for semiconductor structures, photonic bandgap structures may become of even greater value when defects are introduced. In particular, point defects make...

Study on control of defect mode in hybrid mirror chirped porous silicon photonic crystal

Science.gov (United States)

Chen, Ying; Luo, Pei; Han, Yangyang; Cui, Xingning; He, Lei

2018-03-01

Based on the optical resonance principle and the tight-binding theory, a hybrid mirror chirped porous silicon photonic crystal is proposed. The control of the defect mode in hybrid mirror chirped porous silicon photonic crystal is studied. Through the numerical simulation, the control regulations of the defect modes resulted by the number of the periodical layers for the fundamental unit and the cascading number of the chirped structures are analyzed, and the split and the degeneration of the defect modes resulted by the change of the relative location between the mirror structures and the quasi-mirror structures are discussed. The simulation results show that the band gap would be broadened with the increase of the chirp quantity and the layer number of unilateral chirp. Adjusting the structural parameters of the hybrid mirror structure, the multimode characteristics will occur in the band gap. The more the cascading number of the chirped units, the more the number of the filtering channels will be. In addition, with the increase of the relative location between the mirror structures and the quasi-mirror structures, the degeneration of the defect modes will occur and can obtain high Q value. The structure can provide effective theoretical references for the design the multi-channel filters and high Q value sensors.

Atomic diffusion and point defects in crystals. Final report. Progress report, April 1, 1956--August 31, 1972

International Nuclear Information System (INIS)

Slifkin, L.M.

1972-01-01

Studies were made to elucidate the fundamental mechanisms of point defect transport in simple metals and in crystals of the silver halides. Experiments performed include: (a) effect of composition on diffusion in Ag-Au alloys and Ag-Cd alloys; (b) effect of a vacancy flux on diffusion; (c) diffusion of solutes in aluminum and its dilute alloys; (d) dislocation effects in Cu 3 Au; (e) role of electronic structure and ionic radius in diffusion of cations in AgCl; (f) effects of ionic radius on halide impurity ion diffusion in AgCl and AgBr; (g) production of excess point defects in AgCl by deformation and by quenching; (h) the kinetics of the pinning of dislocations by point defects in AgBr crystals. (auth)

High-Q Defect-Free 2D Photonic Crystal Cavity from Random Localised Disorder

Directory of Open Access Journals (Sweden)

Kelvin Chung

2014-07-01

Full Text Available We propose a high-Q photonic crystal cavity formed by introducing random disorder to the central region of an otherwise defect-free photonic crystal slab (PhC. Three-dimensional finite-difference time-domain simulations determine the frequency, quality factor, Q, and modal volume, V, of the localized modes formed by the disorder. Relatively large Purcell factors of 500–800 are calculated for these cavities, which can be achieved for a large range of degrees of disorders.

Surface defect free growth of a spin dimer TlCuCl{sub 3} compound crystals and investigations on its optical and magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Ryu, Gihun, E-mail: G.Ryu@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart (Germany); Son, Kwanghyo [Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart (Germany)

2016-05-15

A defect-free high quality single crystal of spin dimer TlCuCl{sub 3} compound is firstly synthesized at the optimal growth temperature using the vertical Bridgman method. In this study, we clearly found that the cupric chloride is easily decomposed into the Cl{sup −} deficient composition at ≥470 °C. The Cl{sup −}- related gas phase at the high temperature region also always gives rise to a pinhole-like surface defect at the surface of crystal. Therefore, we clearly verified an exotic anisotropic magnetic behavior (anisotropic ratio of M{sub b}/M{sub (201)} at 2 K, 7 T=10) using the defect-free TlCuCl{sub 3} crystals in this three-dimensional spin dimer TlCuCl{sub 3} compound, relatively stronger magnetic ordering in the H//b than that of H//(201) direction at above the transition magnetic field. - Graphical abstract: A single crystal of spin dimer TlCuCl{sub 3} compound with a defect free is successfully synthesized on the basis of TG/DTA result. We newly found that this cupric chloride compound is easily decomposed into the Cl{sup −} deficient composition at ≥470 °C and Cl{sup −} related gas phases also give rise to the defects like a pinhole on the surface of TlCuCl{sub 3} crystal. Using the crystals with a surface defect free, we also clearly verified the crystal structure of spin dimer TlCuCl{sub 3} compound.

Optical manipulation of photonic defect-modes in cholesteric liquid crystals induced by direct laser-lithography

International Nuclear Information System (INIS)

Yoshida, Hiroyuki; Lee, Chee Heng; Miura, Yusuke; Fujii, Akihiko; Ozaki, Masanori

2008-01-01

Manipulation of photonic defect-modes in cholesteric liquid crystals (ChLCs), which are one-dimensional pseudo photonic band-gap materials have been demonstrated by an external optical field. A structural defect in which the pitch length of the ChLC in the bulk and the defect are different was introduced by inducing local polymerization in a photo-polymerizable ChLC material by a direct laser-lithography process, and infiltrating a different ChLC material as the defect medium. When an azobenzene dye-doped ChLC was infiltrated in the defect, the trans-cis isomerization of the dye upon ultraviolet (UV) exposure caused the pitch to shorten, changing the contrast in the pitch lengths at the bulk and the defect, leading to a consequent shifting of the defect-mode. The all-optical manipulation was reversible and had high reproducibility

Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

Science.gov (United States)

Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

2012-08-01

Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

Calculation of dynamic and electronic properties of perfect and defect crystals by semiempirical quantum mechanical methods

International Nuclear Information System (INIS)

Zunger, A.

1975-07-01

Semiempirical all-valence-electron LCAO methods, that were previously used to study the electronic structure of molecules are applied to three problems in solid state physics: the electronic band structure of covalent crystals, point defect problems in solids and lattice dynamical study of molecular crystals. Calculation methods for the electronic band structure of regular solids are introduced and problems regarding the computation of the density matrix in solids are discussed. Three models for treating the electronic eigenvalue problem in the solid, within the proposed calculation schemes, are discussed and the proposed models and calculation schemes are applied to the calculation of the electronic structure of several solids belonging to different crystal types. The calculation models also describe electronic properties of deep defects in covalent insulating crystals. The possible usefulness of the semieipirical LCAO methods in determining the first order intermolecular interaction potential in solids and an improved model for treating the lattice dynamics and related thermodynamical properties of molecular solids are presented. The improved lattice dynamical is used to compute phonon dispersion curves, phonon density of states, stable unit cell structure, lattice heat capacity and thermal crystal parameters, in α and γ-N 2 crystals, using the N 2 -N 2 intermolecular interaction potential that has been computed from the semiempirical LCAO methods. (B.G.)

Radiation defects produced by neutron irradiation in germanium single crystals

International Nuclear Information System (INIS)

Fukuoka, Noboru; Honda, Makoto; Atobe, Kozo; Yamaji, Hiromichi; Ide, Mutsutoshi; Okada, Moritami.

1992-01-01

The nature of defects produced in germanium single crystals by neutron irradiation at 25 K was studied by measuring the electrical resistivity. It was found that two levels located at E c -0.06 eV and E c -0.13 eV were introduced in an arsenic-doped sample. Electron traps at E c -0.10eV were observed in an indium-doped sample. The change in electrical resistivity during irradiation was also studied. (author)

Random defect lines in conformal minimal models

International Nuclear Information System (INIS)

Jeng, M.; Ludwig, A.W.W.

2001-01-01

We analyze the effect of adding quenched disorder along a defect line in the 2D conformal minimal models using replicas. The disorder is realized by a random applied magnetic field in the Ising model, by fluctuations in the ferromagnetic bond coupling in the tricritical Ising model and tricritical three-state Potts model (the phi 12 operator), etc. We find that for the Ising model, the defect renormalizes to two decoupled half-planes without disorder, but that for all other models, the defect renormalizes to a disorder-dominated fixed point. Its critical properties are studied with an expansion in ε∝1/m for the mth Virasoro minimal model. The decay exponents X N =((N)/(2))1-((9(3N-4))/(4(m+1) 2 ))+O((3)/(m+1)) 3 of the Nth moment of the two-point function of phi 12 along the defect are obtained to 2-loop order, exhibiting multifractal behavior. This leads to a typical decay exponent X typ =((1)/(2))1+((9)/((m+1) 2 ))+O((3)/(m+1)) 3 . One-point functions are seen to have a non-self-averaging amplitude. The boundary entropy is larger than that of the pure system by order 1/m 3 . As a byproduct of our calculations, we also obtain to 2-loop order the exponent X-tilde N =N1-((2)/(9π 2 ))(3N-4)(q-2) 2 +O(q-2) 3 of the Nth moment of the energy operator in the q-state Potts model with bulk bond disorder

Crystal growth, defects, and mechanical and spectral properties of a novel mixed laser crystal Nd:GdYNbO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun; Dou, Renqin [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Peng, Fang; Luo, Jianqiao; Sun, Guihua; Sun, Dunlu [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)

2017-01-15

A mixed laser crystal of Nd-doped GYNO crystal was grown successfully by Czochralski method. The crystal belongs to monoclinic system with space group I2/a, the structural parameters are obtained by the X-ray Rietveld refinement method. The defects and dislocations along three crystallographic orientations were studied by using the chemical etching method with the phosphoric acid etchant. The mechanical properties (including hardness, yield strength, fracture toughness, and brittle index) of the crystal were estimated by Vickers hardness test. The transmission spectrum was measured at room temperature, and the absorption peaks were assigned. Spectral properties of the as-grown crystal were investigated by Judd-Ofelt theory, and the Judd-Ofelt intense parameters Ω{sub 2,4,6} were obtained to be 9.674 x 10{sup -20}, 2.092 x 10{sup -20}, and 4.061 x 10{sup -20} cm{sup 2}, respectively. (orig.)

Graphene valley pseudospin filter using an extended line defect

Science.gov (United States)

Gunlycke, Daniel; White, Carter

2011-03-01

Although graphene exhibits excellent electron and thermal transport properties, it does not have an intrinsic band gap, required to use graphene as a replacement material for silicon and other semiconductors in conventional electronics. The band structure of graphene with its two cones near the Fermi level, however, offers opportunities to develop non-traditional applications. One such avenue is to exploit the valley degeneracy in graphene to develop valleytronics. A central component in valleytronics is the valley filter, just as the spin filter is central in spintronics. Herein, we present a two-dimensional valley filter based on scattering of electrons and holes off a recently observed extended line defect [Nat. Nanotech.5, 326 (2010)] within graphene. The transmission probability depends strongly on the valley pseudospin and the angle of incidence of the incident quasiparticles. Quasiparticles arriving at the line defect at a high angle of incidence lead to a valley polarization of the transmitted beam that is near 100 percent. This work was supported by ONR, directly and through NRL.

Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Yaqoob, Faisal [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States); Huang, Mengbing, E-mail: mhuang@sunypoly.edu [College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203 (United States)

2016-07-28

This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ∼150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 10{sup 16 }cm{sup −2}, close to the depth ∼250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

International Nuclear Information System (INIS)

Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

1984-05-01

Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation

Energy Technology Data Exchange (ETDEWEB)

Sedao, Xxx; Garrelie, Florence, E-mail: florence.garrelie@univ-st-etienne.fr; Colombier, Jean-Philippe; Reynaud, Stéphanie; Pigeon, Florent [Université de Lyon, CNRS, UMR5516, Laboratoire Hubert Curien, Université de Saint Etienne, Jean Monnet, F-42023 Saint-Etienne (France); Maurice, Claire; Quey, Romain [Ecole Nationale Supérieure des Mines de Saint-Etienne, CNRS, UMR5307, Laboratoire Georges Friedel, F-42023 Saint-Etienne (France)

2014-04-28

The influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures (LIPSS) has been investigated on a polycrystalline nickel sample. Electron Backscatter Diffraction characterization has been exploited to provide structural information within the laser spot on irradiated samples to determine the dependence of LIPSS formation and lattice defects (stacking faults, twins, dislocations) upon the crystal orientation. Significant differences are observed at low-to-medium number of laser pulses, outstandingly for (111)-oriented surface which favors lattice defects formation rather than LIPSS formation.

Defects of diamond single crystal grown under high temperature and high pressure

Energy Technology Data Exchange (ETDEWEB)

Su, Qingcai, E-mail: suqc@sdu.edu.cn [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China); Zhang, Jianhua [School of Mechanical Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Li, Musen [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China)

2013-11-01

The diamond single crystal, synthesized with Fe–Ni–C–B system of catalyst under high temperature and high pressure, had been observed by field emission scanning electron microscope and transmission electron microscope. The presence of a cellular structure suggested that the diamond grew from melted catalyst solution and there existed a zone of component supercooling zone in front of the solid–liquid interface. The main impurities in the diamond crystal was (FeNi){sub 23}C{sub 6}. The triangle screw pit revealed on the (111) plane was generated by the screw dislocation meeting the diamond (111) plane at the points of emergence of dislocations. A narrow twin plane was formed between the two (111) plane. - Highlights: • High pressure, high temperature synthesis of diamond single crystal. • Fe–Ni–C–B used as catalyst, graphite as carbon source. • The main impurity in the diamond crystal was (FeNi){sub 23}C{sub 6}. • Surface defects arose from screw dislocations and stacking faults.

Structural defect generation in indium antimonide single crystals during electro-erosion cutting

International Nuclear Information System (INIS)

Kravetskij, M.Yu.; Matsas, E.P.; Skorokhod, M.Ya.; Fomin, A.V.; Khromyak, K.Ya.

1990-01-01

Using X-ray topography structural defects generating during electro-erosion cutting of InSb single crystals are studied. It is shown that dislocations, are introduced into so cut dislocation-free ingot plates, nucleation centers being located on their surfaces. It is detected that foreign phase inclusions in InSb are efficient sources of dislocations during cutting

X-ray diffraction topography observations of the core in Bi12SiO20 crystals doped with Mn

International Nuclear Information System (INIS)

Milenov, T.I.; Botev, P.A.; Rafailov, P.M.; Gospodinov, M.M.

2004-01-01

The core region in a bismuth silicate--Bi 12 SiO 20 (BSO) crystal doped with Mn was examined by X-ray double-crystal diffraction topography. Specific features were observed in the topographies as lines and contrast differences that point to defects occupying the central part of the crystal. We discuss the nature of these defects and propose an explanation in terms of stacking faults arranged in different structures

Influence of filling fraction on the defect mode and gap closing of a one-dimensional photonic crystal: An analytical approach

International Nuclear Information System (INIS)

Ansari, N.; Tehranchi, M.M.

2010-01-01

Study of the optical properties of the one-dimensional defective photonic crystals using the gap map is improving through the emergence of new analytical methods, which are easy and without any physical restrictions. Gap map is able to monitor the changes in the defect mode frequencies and photonic band gap regions as a function of filling fractions, and all visible spectra in a single graphic presentation. In this paper, by utilizing a novel technique based on Green's function method for analyzing the defect modes, the gap map and gap closing point of a one-dimensional defective photonic crystal have been demonstrated. This method enables study of the defect modes inside the omnidirectional band gap, which is an important object in the designing of the optical filters. Moreover, as a designing criterion, obtaining the gap closing points inside the gap map enables finding of some filling fraction intervals that each one contains several distinct omnidirectional band gaps simultaneously, using a single photonic crystal. This method has been employed for the design of an optical filter at 1.3 and 1.55 μm, which is applicable for telecommunication.

A quantum-chemical study of oxygen-vacancy defects in PbTiO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Stashans, Arvids [Laboratorio de Fisica, Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)]. E-mail: arvids@utpl.edu.ec; Serrano, Sheyla [Centro de Investigacion en Fisica de Materia Condensada, Corporacion de Fisica Fundamental y Aplicada, Apartado 17-12-637, Quito (Ecuador); Escuela de Ingenierias, Universidad Politecnica Salesiana, Campus Sur, Rumichaca s/n y Moran Valverde, Apartado 17-12-536, Quito (Ecuador); Medina, Paul [Centro de Investigacion en Fisica de Materia Condensada, Corporacion de Fisica Fundamental y Aplicada, Apartado 17-12-637, Quito (Ecuador)

2006-05-31

Investigation of an oxygen vacancy and F center in the cubic and tetragonal lattices of PbTiO{sub 3} crystals is done by means of quantum-chemical simulations. Displacements of defect-surrounding atoms, electronic and optical properties, lattice relaxation energies and some new effects due to the defects presence are reported and analyzed. A comparison with similar studies is made and conclusions are drawn on the basis of the obtained results.

Tunable valley polarization by a gate voltage when an electron tunnels through multiple line defects in graphene.

Science.gov (United States)

Liu, Zhe; Jiang, Liwei; Zheng, Yisong

2015-02-04

By means of an appropriate wave function connection condition, we study the electronic structure of a line defect superlattice of graphene with the Dirac equation method. We obtain the analytical dispersion relation, which can simulate well the tight-binding numerical result about the band structure of the superlattice. Then, we generalize this theoretical method to study the electronic transmission through a potential barrier where multiple line defects are periodically patterned. We find that there exists a critical incident angle which restricts the electronic transmission through multiple line defects within a specific incident angle range. The critical angle depends sensitively on the potential barrier height, which can be modulated by a gate voltage. As a result, non-trivial transmissions of K and K' valley electrons are restricted, respectively, in two distinct ranges of the incident angle. Our theoretical result demonstrates that a gate voltage can act as a feasible measure to tune the valley polarization when electrons tunnel through multiple line defects.

Nematic liquid crystals on sinusoidal channels: the zigzag instability.

Science.gov (United States)

Silvestre, Nuno M; Romero-Enrique, Jose M; Telo da Gama, Margarida M

2017-01-11

Substrates which are chemically or topographically patterned induce a variety of liquid crystal textures. The response of the liquid crystal to competing surface orientations, typical of patterned substrates, is determined by the anisotropy of the elastic constants and the interplay of the relevant lengths scales, such as the correlation length and the surface geometrical parameters. Transitions between different textures, usually with different symmetries, may occur under a wide range of conditions. We use the Landau-de Gennes free energy to investigate the texture of nematics in sinusoidal channels with parallel anchoring bounded by nematic-air interfaces that favour perpendicular (hometropic) anchoring. In micron size channels 5CB was observed to exhibit a non-trivial texture characterized by a disclination line, within the channel, which is broken into a zigzag pattern. Our calculations reveal that when the elastic anisotropy of the nematic does not favour twist distortions the defect is a straight disclination line that runs along the channel, which breaks into a zigzag pattern with a characteristic period, when the twist elastic constant becomes sufficiently small when compared to the splay and bend constants. The transition occurs through a twist instability that drives the defect line to rotate from its original position. The interplay between the energetically favourable twist distortions that induce the defect rotation and the liquid crystal anchoring at the surfaces leads to the zigzag pattern. We investigate in detail the dependence of the periodicity of the zigzag pattern on the geometrical parameters of the sinusoidal channels, which in line with the experimental results is found to be non-linear.

Tunable dual-channel filter based on the photonic crystal with air defects.

Science.gov (United States)

Zhao, Xiaodan; Yang, Yibiao; Wen, Jianhua; Chen, Zhihui; Zhang, Mingda; Fei, Hongming; Hao, Yuying

2017-07-01

We propose a tuning filter containing two channels by inserting a defect layer (Air/Si/Air/Si/Air) into a one-dimensional photonic crystal of Si/SiO 2 , which is on the symmetry of the defect. Two transmission peaks (1528.98 and 1564.74 nm) appear in the optical communication S-band and C-band, and the transmittance of these two channels is up to 100%. In addition, this design realizes multi-channel filtering to process large dynamic range or multiple independent signals in the near-infrared band by changing the structure. The tuning range will be enlarged, and the channels can be moved in this range through the easy control of air thickness and incident angle.

A novel method to alleviate flash-line defects in coining process

KAUST Repository

Xu, Jiangping; Khan, Kamran; El Sayed, Tamer S.

2013-01-01

with the reported experimental results. We also propose a novel method of redesigning the rim geometry of the workpiece to alleviate the flash-line defects which also shows good agreement with experiments. © 2012 Elsevier Inc. All rights reserved.

A magnetically tunable non-Bragg defect mode in a corrugated waveguide filled with liquid crystals

Science.gov (United States)

Zhang, Lu; Fan, Ya-Xian; Liu, Huan; Han, Xu; Lu, Wen-Qiang; Tao, Zhi-Yong

2018-04-01

A magnetically tunable, non-Bragg defect mode (NBDM) was created in the terahertz frequency range by inserting a defect in the middle of a periodically corrugated waveguide filled with liquid crystals (LCs). In the periodic waveguide, non-Bragg gaps beyond the Bragg ones, which appear in the transmission spectra, are created by different transverse mode resonances. The transmission spectra of the waveguide containing a defect showed that a defect mode was present inside the non-Bragg gap. The NBDM has quite different features compared to the Bragg defect mode, which includes more complex, high-order guided wave modes. In our study, we filled the corrugated waveguide with LCs to realize the tunability of the NBDM. The simulated results showed that the NBDM in a corrugated waveguide filled with LCs can be used in filters, sensors, switches, and other terahertz integrated devices.

Investigation of the crystal lattice defects by means of the positrons annihilations; Badania defektow sieci krystalicznej metoda anihilacji pozytonow

Energy Technology Data Exchange (ETDEWEB)

Dryzek, J [Institute of Nuclear Physics, Cracow (Poland)

1994-12-31

In this report the positrons annihilation methods as a tool for the crystal defects studies is presented. The short description of the positron - crystal interactions and different positron capture models are discussed. 192 refs, 67 figs, 6 tabs.

Variation in the defect structure of p-CdTe single crystals at the passage of the laser shock wave

International Nuclear Information System (INIS)

Baidullaeva, A.; Vlasenko, A.I.; Gorkovenko, B.L.; Lomovtsev, A.V.; Mozol', P.E.

2000-01-01

Variations in the minority-carrier lifetime, photoluminescence spectra, dark current and photocurrent temperature dependences of high-resistivity p-CdTe crystals under the action of the laser shock wave are investigated. It is shown that the variations in the aforementioned characteristics during the passage of the shock wave are defined by the generation of the nonequilibrium carriers from deep centers, and, after that, the variations are defined by the formation of intrinsic defects and their subsequent interaction with the defects existing in the initial crystals

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Science.gov (United States)

Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

2012-07-01

An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

CERN Document Server

Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

2001-01-01

It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

Defect structure of TiS{sub 3} single crystals of the A-ZrSe{sub 3} type

Energy Technology Data Exchange (ETDEWEB)

Bolotina, N. B., E-mail: nb-bolotina@mail.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Gorlova, I. G. [Russian Academy of Sciences, Kotel’nikov Institute of Radioengineering and Electronics (Russian Federation); Verin, I. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Titov, A. N. [Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation); Arakcheeva, A. V. [Phase Solutions, Co Ltd. (Switzerland)

2016-11-15

The defect structure of TiS{sub 3} single crystals of the A-ZrSe{sub 3} type has been determined based on X-ray diffraction data. Shear defects manifest themselves as displacements of ab layers (which can imitate a twin) by ∼0.5a. Regular shears facilitate the formation of a superstructure along the c axis. A model of defect in the layer structure is proposed to explain the atomic displacements at an angle to the layer plane.

Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

International Nuclear Information System (INIS)

Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

1990-01-01

The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

Finite element approximation of the fields of bulk and interfacial line defects

Science.gov (United States)

Zhang, Chiqun; Acharya, Amit; Puri, Saurabh

2018-05-01

A generalized disclination (g.disclination) theory (Acharya and Fressengeas, 2015) has been recently introduced that goes beyond treating standard translational and rotational Volterra defects in a continuously distributed defects approach; it is capable of treating the kinematics and dynamics of terminating lines of elastic strain and rotation discontinuities. In this work, a numerical method is developed to solve for the stress and distortion fields of g.disclination systems. Problems of small and finite deformation theory are considered. The fields of a single disclination, a single dislocation treated as a disclination dipole, a tilt grain boundary, a misfitting grain boundary with disconnections, a through twin boundary, a terminating twin boundary, a through grain boundary, a star disclination/penta-twin, a disclination loop (with twist and wedge segments), and a plate, a lenticular, and a needle inclusion are approximated. It is demonstrated that while the far-field topological identity of a dislocation of appropriate strength and a disclination-dipole plus a slip dislocation comprising a disconnection are the same, the latter microstructure is energetically favorable. This underscores the complementary importance of all of topology, geometry, and energetics in understanding defect mechanics. It is established that finite element approximations of fields of interfacial and bulk line defects can be achieved in a systematic and routine manner, thus contributing to the study of intricate defect microstructures in the scientific understanding and predictive design of materials. Our work also represents one systematic way of studying the interaction of (g.)disclinations and dislocations as topological defects, a subject of considerable subtlety and conceptual importance (Aharoni et al., 2017; Mermin, 1979).

Mechanical properties of the weld line defect in micro injection molding for various nano filled polypropylene composites

International Nuclear Information System (INIS)

Xie Lei; Ziegmann, Gerhard

2011-01-01

Research highlights: → PP/CNFs and PP/TiO 2 composites with relative high loading fractions (10, 20, 30 and 35 wt%) were fabricated by inner melt mixing process. Micro tensile test samples were formed by injection molding combined with variotherm process for all composites. → The morphological properties of all nano composites were characterized by WXRD, whose results imply the adding nano fillers did not change the crystal form of PP, but the crystallites size and distance between lattices of crystals were changed with various nano fillers and loading fractions. → DSC analysis show that due to the nucleating function of nano fillers, the peak temperature of crystallization was increased and the peak temperature of crystallization melting was decreased by adding the nanofillers. → The flow ability of nano composites was tested by high pressure single capillary rheometer and the results demonstrate that nano fillers increased the viscosity of PP matrix. → Based on these significant information and analysis foundation of the nano filled composites, the micro weld line samples were formed by injection molding process and characterized by tensile test method. From the achieved results, it can be found that in general, for functional nano filled polymer composites, the mechanical property of micro weld lines were obviously influenced by nano fillers' shape and loading fractions. → The E modulus of micro weld line was increased due to loading CNFs in PP matrix, while the elongation of the micro tensile samples with weld line is considerably decreased comparing with those of unfilled PP samples. The detrimental tensile strength of micro weld lines were observed when CNFs contents increasing, except for at a 10 wt%. → For TiO 2 nano particles filled PP, due to the poor dispersion of nano particles, at low loading fraction of 10 wt%, the E modulus and tensile strength of micro weld lines were decreased by filling nano particles, but when the loading fraction

Effect of reorientation of anisotropic point defects on relaxation of crystal elastic coefficients of high order

International Nuclear Information System (INIS)

Topchyan, I.I.; Dokhner, R.D.

1977-01-01

The effect of reorientation of anisotropic point defects in uniform fields of elastic stresses on the relaxation of the elastic coefficients of a crystal was investigated in the nonlinear elasticity theory approximation. In calculating the interaction of point defects with elastic-stress fields was taken into consideration. The expression for the relaxations of the elasticity coefficients are obtained in an analytical form. The relaxation of the second-order elasticity coefficients is due to the dimentional interaction of a point defect with an applied-stress field, whereas the relaxation of the higher-order elasticity coefficients is determined both by dimentional and module effects

Defects in Czochralski-grown silicon crystals investigated by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

1994-10-01

Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

An all-silicon laser by coupling between electronic localized states and defect states of photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Huang Weiqi, E-mail: WQHuang2001@yahoo.com [Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025 (China); Huang Zhongmei; Miao Xinjiang; Cai Chenlan; Liu Jiaxin; Lue Quan [Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025 (China); Liu Shirong, E-mail: Shirong@yahoo.com [State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China); Qin Chaojian [State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China)

2012-01-15

In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal is used to select model in the nano-laser. The experimental demonstration is reported in which the peaks of stimulated emission at about 600 nm and 700 nm were observed on the Si QD prepared in oxygen after annealing which improves the stimulated emission. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

Orientation-dependent forces between flux lines and crystal lattice in pure niobium

International Nuclear Information System (INIS)

Holzhauser, W.

1976-01-01

Torque measurements were performed with cylindrical niobium crystals, due to the very small pinning of the high-purity material. A torque that tries to align the flux lines along special directions of the crystal lattice was studied

Effect of the defect on the focusing in a two-dimensional photonic-crystal-based flat lens

International Nuclear Information System (INIS)

Feng Zhifang; Wang Xiuguo; Li Zhiyuan; Zhang Daozhong

2008-01-01

We have investigated in detail the influence of defect on the focusing of electromagnetic waves in a two-dimensional photonic-crystal flat lens by using the finite-difference time-domain method. The result shows that many focusings can be observed at the symmetrical positions when a defect is introduced into the lens. Furthermore, the wave-guides in the lens can confine the transmission wave effectively and improve the quality of the focusing

Defect types and room-temperature ferromagnetism in undoped rutile TiO2 single crystals

Science.gov (United States)

Li, Dong-Xiang; Qin, Xiu-Bo; Zheng, Li-Rong; Li, Yu-Xiao; Cao, Xing-Zhong; Li, Zhuo-Xin; Yang, Jing; Wang, Bao-Yi

2013-03-01

Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO2 single crystals when a magnetic field is applied parallel to the sample plane. By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy, Ti3+—VO defect complexes (or clusters) have been identified in annealed crystals at a high vacuum. We elucidate that the unpaired 3d electrons in Ti3+ ions provide the observed room-temperature ferromagnetism. In addition, excess oxygen ions in the TiO2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments.

Defect types and room-temperature ferromagnetism in undoped rutile TiO2 single crystals

International Nuclear Information System (INIS)

Li Dong-Xiang; Cao Xing-Zhong; Li Zhuo-Xin; Yang Jing; Wang Bao-Yi; Qin Xiu-Bo; Zheng Li-Rong; Li Yu-Xiao

2013-01-01

Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO 2 single crystals when a magnetic field is applied parallel to the sample plane. By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy, Ti 3+ —V O defect complexes (or clusters) have been identified in annealed crystals at a high vacuum. We elucidate that the unpaired 3d electrons in Ti 3+ ions provide the observed room-temperature ferromagnetism. In addition, excess oxygen ions in the TiO 2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments

Defects Identification and Effects of Annealing on Lu2(1-xY2xSiO5 (LYSO Single Crystals for Scintillation Application

Directory of Open Access Journals (Sweden)

Samuel Blahuta

2011-07-01

Full Text Available The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL in Lu2(1-xY2xSiO5 (LYSO single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ, revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

Coupling reducing k-points for supercell models of defects in three-dimensional photonic crystals

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Bjarklev, Anders Overgaard

2004-01-01

The optimum choice of k-point for supercell calculations of defect states in a three-dimensional photonic crystal is investigated for the case of a supercell with a simple cubic (SC) structure. By using the k-point (1/4,1/4,1/4) it is possible to eliminate the symmetric part of the repeated...

Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

CERN Document Server

Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

2002-01-01

It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

Energy Technology Data Exchange (ETDEWEB)

Kretzer, Ulrich

2007-12-10

In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

Impact of interaction range and curvature on crystal growth of particles confined to spherical surfaces

Science.gov (United States)

Paquay, Stefan; Both, Gert-Jan; van der Schoot, Paul

2017-07-01

When colloidal particles form a crystal phase on a spherical template, their packing is governed by the effective interaction between them and the elastic strain of bending the growing crystal. For example, if growth commences under appropriate conditions, and the isotropic crystal that forms reaches a critical size, growth continues via the incorporation of defects to alleviate elastic strain. Recently, it was experimentally found that, if defect formation is somehow not possible, the crystal instead continues growing in ribbons that protrude from the original crystal. Here we report on computer simulations in which we observe both the formation of ribbons at short interaction ranges and packings that incorporate defects if the interaction is longer-ranged. The ribbons only form above some critical crystal size, below which the nucleus is disk-shaped. We find that the scaling of the critical crystal size differs slightly from the one proposed in the literature, and we argue that this is because the actual morphology transition is caused by the competition between line tension and elastic stress, rather than the competition between chemical potential and elastic stress.

Defect structure in proton-irradiated copper and nickel

International Nuclear Information System (INIS)

Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

1987-01-01

This single crystals of copper or nickel with a thickness of about 10 μm are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several μm in size, are alingned parallel to the {001} plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.)

Coupling of single nitrogen-vacancy defect centers in diamond nanocrystals to optical antennas and photonic crystal cavities

Energy Technology Data Exchange (ETDEWEB)

Wolters, Janik; Kewes, Guenter; Schell, Andreas W.; Aichele, Thomas; Benson, Oliver [Humboldt-Universitaet zu Berlin, Institut fuer Physik, Berlin (Germany); Nuesse, Nils; Schoengen, Max; Loechel, Bernd [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Hanke, Tobias; Leitenstorfer, Alfred [Department of Physics and Center for Applied Photonics, Universitaet Konstanz, Konstanz (Germany); Bratschitsch, Rudolf [Department of Physics and Center for Applied Photonics, Universitaet Konstanz, Konstanz (Germany); Technische Universitaet Chemnitz, Institut fuer Physik, Chemnitz (Germany)

2012-05-15

We demonstrate the ability to modify the emission properties and enhance the interaction strength of single-photon emitters coupled to nanophotonic structures based on metals and dielectrics. Assembly of individual diamond nanocrystals, metal nanoparticles, and photonic crystal cavities to meta-structures is introduced. Experiments concerning controlled coupling of single defect centers in nanodiamonds to optical nanoantennas made of gold bowtie structures are reviewed. By placing one and the same emitter at various locations with high precision, a map of decay rate enhancements was obtained. Furthermore, we demonstrate the formation of a hybrid cavity quantum electrodynamics system in which a single defect center is coupled to a single mode of a gallium phosphite photonic crystal cavity. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Native defect changes in CdS single crystal platelets induced by vacuum heat treatments at temperatures up to 600/sup 0/C

Energy Technology Data Exchange (ETDEWEB)

Christmann, M H; Dierssen, G H; Salmon, O N; Taylor, A L; Thom, W H

1975-12-01

Physical properties of selected CdS single crystal platelets as-grown and after vacuum heat treatments at temperatures up to 600/sup 0/C were studied using uv excited edge emission, mass spectrometry, electrical resistivity, and electron paramagnetic resonance (EPR). It was found that sulfur leaves the crystal at temperatures as low as 100/sup 0/C creating a depletion layer. The native defect changes were monitored by edge emission studies at 4.2/sup 0/K in combination with etch treatments. The defect structure throughout the crystal is not only dependent upon the temperature and atmosphere of the treatments, but is also strongly dependent upon the cooling rate. (auth)

Defect modelling

International Nuclear Information System (INIS)

Norgett, M.J.

1980-01-01

Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

One-dimensional photonic crystals with a planar oriented nematic layer: Temperature and angular dependence of the spectra of defect modes

International Nuclear Information System (INIS)

Arkhipkin, V. G.; Gunyakov, V. A.; Myslivets, S. A.; Gerasimov, V. P.; Zyryanov, V. Ya.; Vetrov, S. Ya.; Shabanov, V. F.

2008-01-01

Transmission spectra of a one-dimensional photonic crystal (PC) formed by two multilayer dielectric mirrors and a planar oriented layer of 5CB nematic liquid crystal (LC) that is sandwiched between these mirrors and serves as a structure defect are investigated experimentally. Specific features of the behavior of the spectrum of defect modes as a function of the angle of incidence of light on the crystal are studied for two polarizations: parallel and perpendicular to the director of the LC; the director either lies in the plane of incidence or is perpendicular to it. It is shown that, for the configurations considered, the maxima of the defect modes shift toward the short-wavelength region as the tilt angle of incidence radiation increases; this tendency is more manifest for the parallel-polarized component, when the director lies in the plane of incidence. In the latter case, the width of the photonic band gap (PBG) appreciably decreases. The temperature dependence of the polarization components of the transmission spectra of a PC is investigated in the case of normal incidence of light. The spectral shift of defect modes due to the variation of the refractive index of the LC at the nematic-isotropic liquid phase transition point is measured. It is shown that, in real PCs, the amplitude of defect modes decreases when approaching the center of the band gap, as well as when the number of layers in the dielectric mirrors increases. Theoretical transmission spectra of the PCs calculated by the method of recurrence relations with regard to the decay of defect modes are in good agreement with experimental data.

Consolidation of nanometer-sized aluminum single crystals: Microstructure and defects evolutions

KAUST Repository

Afify, N. D.

2014-04-01

Deriving bulk materials with ultra-high mechanical strength from nanometer-sized single metalic crystals depends on the consolidation procedure. We present an accurate molecular dynamics study to quantify microstructure responses to consolidation. Aluminum single crystals with an average size up to 10.7 nm were hydrostatically compressed at temperatures up to 900 K and pressures up to 5 GPa. The consolidated material developed an average grain size that grew exponentially with the consolidation temperature, with a growth rate dependent on the starting average grain size and the consolidation pressure. The evolution of the microstructure was accompanied by a significant reduction in the concentration of defects. The ratio of vacancies to dislocation cores decreased with the average grain size and then increased after reaching a critical average grain size. The deformation mechanisms of poly-crystalline metals can be better understood in the light of the current findings. © 2013 Elsevier B.V. All rights reserved.

Consolidation of nanometer-sized aluminum single crystals: Microstructure and defects evolutions

KAUST Repository

Afify, N. D.; Salem, H. G.; Yavari, A.; El Sayed, Tamer S.

2014-01-01

Deriving bulk materials with ultra-high mechanical strength from nanometer-sized single metalic crystals depends on the consolidation procedure. We present an accurate molecular dynamics study to quantify microstructure responses to consolidation. Aluminum single crystals with an average size up to 10.7 nm were hydrostatically compressed at temperatures up to 900 K and pressures up to 5 GPa. The consolidated material developed an average grain size that grew exponentially with the consolidation temperature, with a growth rate dependent on the starting average grain size and the consolidation pressure. The evolution of the microstructure was accompanied by a significant reduction in the concentration of defects. The ratio of vacancies to dislocation cores decreased with the average grain size and then increased after reaching a critical average grain size. The deformation mechanisms of poly-crystalline metals can be better understood in the light of the current findings. © 2013 Elsevier B.V. All rights reserved.

Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

Energy Technology Data Exchange (ETDEWEB)

Potthoff, H.H. (Technische Univ. Braunschweig (Germany, F.R.). Inst. fuer Metallphysik und Nukleare Festkoerperphysik)

1983-05-16

Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 ..mu..m, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 ..mu..m) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations.

Nanoscale characterization of local structures and defects in photonic crystals using synchrotron-based transmission soft X-ray microscopy

Science.gov (United States)

Nho, Hyun Woo; Kalegowda, Yogesh; Shin, Hyun-Joon; Yoon, Tae Hyun

2016-01-01

For the structural characterization of the polystyrene (PS)-based photonic crystals (PCs), fast and direct imaging capabilities of full field transmission X-ray microscopy (TXM) were demonstrated at soft X-ray energy. PS-based PCs were prepared on an O2-plasma treated Si3N4 window and their local structures and defects were investigated using this label-free TXM technique with an image acquisition speed of ~10 sec/frame and marginal radiation damage. Micro-domains of face-centered cubic (FCC (111)) and hexagonal close-packed (HCP (0001)) structures were dominantly found in PS-based PCs, while point and line defects, FCC (100), and 12-fold symmetry structures were also identified as minor components. Additionally, in situ observation capability for hydrated samples and 3D tomographic reconstruction of TXM images were also demonstrated. This soft X-ray full field TXM technique with faster image acquisition speed, in situ observation, and 3D tomography capability can be complementally used with the other X-ray microscopic techniques (i.e., scanning transmission X-ray microscopy, STXM) as well as conventional characterization methods (e.g., electron microscopic and optical/fluorescence microscopic techniques) for clearer structure identification of self-assembled PCs and better understanding of the relationship between their structures and resultant optical properties. PMID:27087141

Pressure-induced organic topological nodal-line semimetal in the three-dimensional molecular crystal Pd (dddt) 2

Science.gov (United States)

Liu, Zhao; Wang, Haidi; Wang, Z. F.; Yang, Jinlong; Liu, Feng

2018-04-01

The nodal-line semimetal represents a class of topological materials characterized with highest band degeneracy. It is usually found in inorganic materials of high crystal symmetry or a minimum symmetry of inversion aided with accidental band degeneracy [Phys. Rev. Lett. 118, 176402 (2017), 10.1103/PhysRevLett.118.176402]. Based on first-principles band structure, Wannier charge center, and topological surface state calculations, here we predict a pressure-induced topological nodal-line semimetal in the absence of spin-orbit coupling (SOC) in the synthesized single-component 3D molecular crystal Pd (dddt) 2 . We show a Γ -centered single nodal line undulating within a narrow energy window across the Fermi level. This intriguing nodal line is generated by pressure-induced accidental band degeneracy, without protection from any crystal symmetry. When SOC is included, the fourfold degenerated nodal line is gapped and Pd (dddt) 2 becomes a strong 3D topological metal with an Z2 index of (1;000). However, the tiny SOC gap makes it still possible to detect the nodal-line properties experimentally. Our findings afford an attractive route for designing and realizing topological states in 3D molecular crystals, as they are weakly bonded through van der Waals forces with a low crystal symmetry so that their electronic structures can be easily tuned by pressure.

Bottom-up photonic crystal approach with top-down defect and heterostructure fine-tuning.

Science.gov (United States)

Ding, Tao; Song, Kai; Clays, Koen; Tung, Chen-Ho

2010-03-16

We combine the most efficient (chemical) approach toward three-dimensional photonic crystals with the most convenient (physical) technique for creating non-close-packed crystalline structures. Self-assembly of colloidal particles in artificial opals is followed by a carefully tuned plasma etching treatment. By covering the resulting top layer of more open structure with original dense opal, embedded defect layers and heterostructures can be conveniently designed for advanced photonic band gap and band edge engineering.

Imaging of surfaces and defects of crystals. Progress report, May 1, 1978--April 30, 1979

International Nuclear Information System (INIS)

Cowley, J.M.

1979-04-01

The possibility of obtaining electron diffraction patterns from very small specimen regions combined with high resolution imaging by use of scanning transmission electron microscopy (STEM) allows the detailed study of small nuclei of reaction products or of crystal defects. The capabilities of this method have been extended by the design and construction of a TV system for the viewing and recording of microdiffraction patterns from our STEM instrument so that clear patterns can be obtained from regions as small as 10A in diameter. This system has been applied to the study of initial stages of oxidation of chromium films, revealing the presence of very small oxide nuclei and identifying these crystals as having a previously unsuspected spinel structure. The further stages of growth of oxides on chromium are being investigated. Initial results have also been obtained on the surface structure of oxides such as MgO. The extension of previous work on the diffraction from, and imaging of crystal surfaces by the use of medium-to-low energy electrons (15 to 1 keV) has allowed a much more complete understanding of the contrast-producing mechanisms. Application to the study of pyrolytic graphite surfaces has given a clear picture of the mosaic structure and defect distribution and provided a basis for the more reliable and quantitative general use of these techniques in surface structure analysis

Crystal growth, structure, defects, mechanical and spectral properties of Nd{sub 0.01}:Gd{sub 0.89}La{sub 0.1}NbO{sub 4} mixed crystal

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun; Lu, Wancheng; Xu, Jinrui [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Sun, Guihua; Sun, Dunlu [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui Province (China)

2017-10-15

A novel mixed laser crystal of Nd:GdLaNbO{sub 4} (Nd:GLNO) was grown successfully by conventional Czochralski method. The unit cell parameters were obtained by Rietveld refinement method. The density of the as-grown crystal was measured by Archimedean buoyancy method and calculated in theory. Absorption spectrum of Nd:GLNO crystal was recorded at room temperature, and 11 absorption peaks were assigned. The defects of Nd:GLNO crystal were revealed by using chemical etching method with phosphoric acid as etchant. The mechanical properties (including hardness, yield strength, elastic stiffness constant, fracture toughness and brittleness index) were systemically estimated based on Vickers hardness test. All these obtained results play a quite important role in further investigation of Nd:GLNO crystal. (orig.)

On kinetics of paramagnetic radiation defects accumulation in beryllium ceramics

International Nuclear Information System (INIS)

Polyakov, A.I.; Ryabikin, Yu.A.; Zashkvara, O.V.; Bitenbaev, M.I.; Petykhov, Yu.V.

1999-01-01

Results of paramagnetic radiation defects concentration dependence study in beryllium ceramics from gamma-irradiation dose ( 60 Co) within interval 0-100 Mrem are cited. Obtained dose dependence has form of accumulation curve with saturation typical of for majority of solids (crystals, different polymers, organic substances and others) , in which under irradiation occur not only formation of paramagnetic radiation defects, but its destruction due to recombination and interaction with radiation fields. Analysis of accumulation curve by the method of distant asymptotics allows to determine that observed in gamma-irradiated beryllium ceramics double line of electron spin resonance is forming of two types of paramagnetic radiation defects. It was defined, that sum paramagnetic characteristics of beryllium ceramics within 1-100 Mrad gamma- irradiation dose field change insignificantly and define from first type of paramagnetic radiation defects

Thermoluminescent and dosimetric properties of anion-defective a-Al2O3 single crystals with filled deep traps

International Nuclear Information System (INIS)

Kortov, V.S.; Milman, I.I.; Nikiforov, S.V.

2002-01-01

Some new experimental results illustrating the effect of deep traps on luminescent and dosimetric properties of anion-defective single crystals of a-Al 2 O 3 have been described. It was found that deep traps had an electronic origin. They were filled thanks to the photoionisation of F-centres and their filling was accompanied by the conversion of FF+ centres. The experiments revealed an interactive interaction of deep trapping centres. A model taking into account the thermal ionisation of excited states of F-centres was proposed. This model describes the trap filling process and mechanisms of the radio-, photo- and thermoluminescence, TSC and TSEE of the crystals under study. The sensitivity of TLD-500 detectors based on anion-defective a-Al 2 O 3 equalised when deep trapping centres were filled. (author)

Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

Science.gov (United States)

Qinwen, XUE; Xiaohua, WANG; Chenglin, LIU; Youwen, LIU

2018-03-01

The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2) N /GaAs/(SiO2/Si) N /air is far higher than in asymmetric structure of air/(Si/SiO2) N /GaAs/(Si/SiO2) N /air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.

Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

International Nuclear Information System (INIS)

Potthoff, H.H.

1983-01-01

Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 μm, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 μm) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations. (author)

Position Dependent Spontaneous Emission Spectra of a Λ-Type Atomic System Embedded in a Defective Photonic Crystal

International Nuclear Information System (INIS)

Entezar, S. Roshan

2012-01-01

We investigate the position dependent spontaneous emission spectra of a Λ-type three-level atom with one transition coupled to the free vacuum reservoir and the other one coupled to a double-band photonic band gap reservoir with a defect mode in the band gap. It is shown that, for the atom at the defect location, we have a two-peak spectrum with a wide dark line due to the strong coupling between the atom and the defect mode. While, when the atom is far from the defect location (or in the absence of the defect mode), the spectrum has three peaks with two dark lines due to the coupling between the atom and the photonic band gap reservoir with the largest density of states near the band edges. On the other hand, we have a four-peak spectrum for the atom at the space in between. Moreover, the average spontaneous emission spectra of the atoms uniformly embedded in high dielectric or low dielectric regions are described. It is shown that the atoms embedded in high (low) dielectric regions far from the defect location, effectively couple to the modes of the lower (upper) photonic band. However, the atoms embedded in high dielectric or low dielectric regions at the defect location, are coupled mainly to the defect modes. While, the atoms uniformly embedded in high (low) dielectric regions with a normal distance from the defect location, are coupled to both of defect and lower (upper) photonic band modes. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

A 2D Rods-in-Air Square-Lattice Photonic Crystal Optical Switch

Science.gov (United States)

2009-03-01

4] Tao Chu, Hirohito Yamada, Satomi Ishida, Yasuhiko Arakawa, Thermooptic switch based on photonic-crystal line-defect waveguides, IEEE Photon...Ishida, Yasuhiko Arakawa, Hiroyuki Fujita, Hiroshi Toshiyoshi, Design and fabrication on MEMS optical mod- ulators integrated with Phc waveguide, in

Symmetrical analysis of the defect level splitting in two-dimensional photonic crystals

International Nuclear Information System (INIS)

Malkova, N; Kim, S; Gopalan, V

2003-01-01

In this paper doubly degenerate defect states in the band gap of the two-dimensional photonic crystal are studied. These states can be split by a convenient distortion of the lattice. Through analogy with the Jahn-Teller effect in solids, we present a group theoretical analysis of the lifting of the degeneracy of doubly degenerate states in a square lattice by different vibronic modes. The effect is supported by the supercell plane-wave model and by the finite difference time domain technique. We suggest ways for using the effect in photonic switching devices and waveguides

Natural defects and defects created by ionic implantation in zinc tellurium

International Nuclear Information System (INIS)

Roche, J.P.; Dupuy, M.; Pfister, J.C.

1977-01-01

Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

Procedure for growing Bi4Ge3O12 bismuth germanate single crystals with suppressed growth defects

International Nuclear Information System (INIS)

Zikmund, J.; Blazek, K.; Jarolimek, O.; Horak, J.

1991-01-01

The method developed allows high-quality scintillator material to be grown reproducibly by the Czochralski method. The crystals attain diameters up to 80 mm and lengths up to 200 mm. The growth is performed on instruments equipped with devices for continuous measurement of weight increments of the growing crystals with a precision better than 10 mg. The growth parameters are controlled with a computer and based on actual data. The crystals are grown using an axial temperature gradient within the range of 25 to 35 degC/cm and a constant drawing rate within the range of 0.5 to 1.2 mm/h. An interface shape suitable for the suppression of defect development is achieved through a combination of the weight increment and rotation of the crystal. (M.D.)

On-line defect detection of aluminum coating using fiber optic sensor

Science.gov (United States)

Patil, Supriya S.; Shaligram, A. D.

2015-03-01

Aluminum metallization using the sprayed coating for exhaust mild steel (MS) pipes of tractors is a standard practice for avoiding rusting. Patches of thin metal coats are prone to rusting and are thus considered as defects in the surface coating. This paper reports a novel configuration of the fiber optic sensor for on-line checking the aluminum metallization uniformity and hence for defect detection. An optimally chosen high bright 440 nm BLUE LED (light-emitting diode) launches light into a transmitting fiber inclined at the angle of 60° to the surface under inspection placed adequately. The reflected light is transported by a receiving fiber to a blue enhanced photo detector. The metallization thickness on the coated surface results in visually observable variation in the gray shades. The coated pipe is spirally inspected by a combination of linear and rotary motions. The sensor output is the signal conditioned and monitored with RISHUBH DAS. Experimental results show the good repeatability in the defect detection and coating non-uniformity measurement.

In-line monitoring and interpretation of an indomethacin anti-solvent crystallization process by near-infrared spectroscopy (NIRS).

Science.gov (United States)

Lee, Hea-Eun; Lee, Min-Jeong; Kim, Woo-Sik; Jeong, Myung-Yung; Cho, Young-Sang; Choi, Guang Jin

2011-11-28

PAT (process analytical technology) has been emphasized as one of key elements for the full implementation of QbD (quality-by-design) in the pharmaceutical area. NIRS (near-infrared spectroscopy) has been studied intensively as an in-line/on-line monitoring tool in chemical and biomedical industries. A precise and reliable monitoring of the particle characteristics during crystallization along with a suitable control strategy should be highly encouraged for the conformance to new quality system of pharmaceutical products. In this study, the anti-solvent crystallization process of indomethacin (IMC) was monitored using an in-line NIRS. IMC powders were produced via anti-solvent crystallization using two schemes; 'S-to-A' (solvent-to-antisolvent) and 'A-to-S' (antisolvent-to-solvent). In-line NIR spectra were analyzed by a PCA (principal component analysis) method. Although pure α-form IMC powder was resulted under A-to-S scheme, a mixture of the α-form and γ-form was produced for S-to-A case. By integrating the PCA results with off-line characterization (SEM, XRD, DSC) data, the crystallization process under each scheme was elucidated by three distinct consecutive steps. It was demonstrated that in-line NIRS, combined with PCA, can be very useful to monitor in real time and interpret the anti-solvent crystallization process with respect to the polymorphism and particle size. Copyright © 2011 Elsevier B.V. All rights reserved.

A Study of Defect Behavior in Almandine Garnet

Science.gov (United States)

Geiger, C. A.; Brearley, A. J.; Dachs, E.; Tipplet, G.; Rossman, G. R.

2016-12-01

Transport and diffusion in crystals are controlled by defects. However, a good understanding of the defect types in many silicates, including garnet, is not at hand. We undertook a study on synthetic almandine, ideal end-member Fe3Al2Si3O12, to better understand its precise chemical and physical properties and defect behavior. Crystals were synthesized at high pressures and temperatures under different fO2 conditions using various starting materials with H2O and without. The almandine obtained came in polycrystalline and single-crystal form. The synthetic reaction products and crystals were carefully characterized using X-ray powder diffraction, electron microprobe and TEM analysis and with 57Fe Mössbauer, UV/VIS single-crystal absorption and IR single-crystal spectroscopy. Various possible intrinsic defects, such as the Frenkel, Schottky and site-disorder types, along with Fe3+, in both synthetic and natural almandine crystals, were analyzed based on model defects expressed in Kröger-Vink notation. Certain types of minor microscopic- to macroscopic-sized precipitation or exsolution phases, including some that are nanosized, that are observed in synthetic almandine (e.g., magnetite), as well as in more compositionally complex natural crystals (e.g., magnetite, rutile, ilmenite), may result from defect reactions. An explanation for their origin through minor amounts of defects in garnet has certain advantages over other models that have been put forth in the literature that assume strict garnet stoichiometry for their formation and/or open-system atomic transport over relatively long length scales. Physical properties, including magnetic, electrical conductivity and diffusion behavior, as well as the color, of almandine are also analyzed in terms of various possible model defects. It is difficult, if not impossible, to synthesize stoichiometric end-member almandine, Fe3Al2Si3O12, in the laboratory, as small amounts of extrinsic OH- and/or Fe3+ defects, for example

Magnetoresistance of Mn-decorated topological line defects in graphene

KAUST Repository

Obodo, Tobechukwu Joshua

2015-01-13

We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

Magnetoresistance of Mn-decorated topological line defects in graphene

KAUST Repository

Obodo, Tobechukwu Joshua; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

2015-01-01

We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

International Nuclear Information System (INIS)

Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

2015-01-01

Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

The Jump Problem for Mixed-Type Equations with Defects on the Type Change Line

Directory of Open Access Journals (Sweden)

Ahmed Maher

2010-01-01

Full Text Available The jump problem and problems with defects on the type change line for model mixed-type equations in the mixed domains are investigated. The explicit solutions of the jump problem are obtained by the method of integral equations and by the Fourier transformation method. The problems with defects are reduced to singular integral equations. Some results for the solution of the equation under consideration are discussed concerning the existence and uniqueness for the solution of the suggested problem.

Electronic relaxations of radiative defects of the anion sublattice in cesium bromide crystals and exoemission of electrons

CERN Document Server

Galyij, P V

2002-01-01

The paper presents the results of investigations of thermostimulated exoelectron emission (TSEE) from CsBr crystal, excited by moderate doses (D <= 10 sup 4 Gy) of ultraviolet (h nu <= 7 eV) that selectively creates anion excitons and radiative defects in the anion sublattice. Having used the previously established connection between thermoactivated processes such as thermostimulated exoemission, electroconductivity, and luminescence in the irradiated crystal lattice, the concentrations of exoemission-active centers (EAC) and kinetics parameters of TSEE are calculated. The EAC concentration calculated on a base of the bulk, thermoactivated-recombinational, and band-gap Auger-like exoemission mechanisms, are in satisfactory agreement with the concentration of electron color centers in the irradiated crystals.

Shift and broadening of emission lines in Nd :YAG laser crystal ...

Indian Academy of Sciences (India)

1Department of Optics and Laser Engineering, Estahban Branch, Islamic Azad ... Nd3+:YAG crystal; heat generation; three-level emission lines; four-level emission ... Modelling of high-power solid-state lasers requires precise knowledge of ...

Comparison of four computational methods for computing Q factors and resonance wavelengths in photonic crystal membrane cavities

DEFF Research Database (Denmark)

de Lasson, Jakob Rosenkrantz; Frandsen, Lars Hagedorn; Burger, Sven

2016-01-01

We benchmark four state-of-the-art computational methods by computing quality factors and resonance wavelengths in photonic crystal membrane L5 and L9 line defect cavities.The convergence of the methods with respect to resolution, degrees of freedom and number ofmodes is investigated. Special att...... attention is paid to the influence of the size of the computational domain. Convergence is not obtained for some of the methods, indicating that some are moresuitable than others for analyzing line defect cavities....

Coupling of carbon monoxide molecules over oxygen-defected UO2(111) single crystal and thin film surfaces.

Science.gov (United States)

Senanayake, S D; Waterhouse, G I N; Idriss, H; Madey, Theodore E

2005-11-22

While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO2(111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene.

Coupling of Carbon Monoxide Molecules over Oxygen Defected UO2 (111) Single Crystal and Thin Film Surfaces

International Nuclear Information System (INIS)

Senanayake, S.; Waterhouse, G.; Idriss, H.; Madey, T.

2005-01-01

While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C 2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO 2 (111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U 4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene

Three-dimensional interactive Molecular Dynamics program for the study of defect dynamics in crystals

Science.gov (United States)

Patriarca, M.; Kuronen, A.; Robles, M.; Kaski, K.

2007-01-01

The study of crystal defects and the complex processes underlying their formation and time evolution has motivated the development of the program ALINE for interactive molecular dynamics experiments. This program couples a molecular dynamics code to a Graphical User Interface and runs on a UNIX-X11 Window System platform with the MOTIF library, which is contained in many standard Linux releases. ALINE is written in C, thus giving the user the possibility to modify the source code, and, at the same time, provides an effective and user-friendly framework for numerical experiments, in which the main parameters can be interactively varied and the system visualized in various ways. We illustrate the main features of the program through some examples of detection and dynamical tracking of point-defects, linear defects, and planar defects, such as stacking faults in lattice-mismatched heterostructures. Program summaryTitle of program:ALINE Catalogue identifier:ADYJ_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADYJ_v1_0 Program obtainable from: CPC Program Library, Queen University of Belfast, N. Ireland Computer for which the program is designed and others on which it has been tested: Computers:DEC ALPHA 300, Intel i386 compatible computers, G4 Apple Computers Installations:Laboratory of Computational Engineering, Helsinki University of Technology, Helsinki, Finland Operating systems under which the program has been tested:True64 UNIX, Linux-i386, Mac OS X 10.3 and 10.4 Programming language used:Standard C and MOTIF libraries Memory required to execute with typical data:6 Mbytes but may be larger depending on the system size No. of lines in distributed program, including test data, etc.:16 901 No. of bytes in distributed program, including test data, etc.:449 559 Distribution format:tar.gz Nature of physical problem:Some phenomena involving defects take place inside three-dimensional crystals at times which can be hardly predicted. For this reason they are

Point defects and defect clusters examined on the basis of some fundamental experiments

International Nuclear Information System (INIS)

Zuppiroli, L.

1975-01-01

On progressing from the centre of the defect to the surface the theoretical approach to a point defect passes from electronic theories to elastic theory. Experiments by which the point defect can be observed fall into two categories. Those which detect long-range effects: measurement of dimensional variations in the sample; measurement of the mean crystal parameter variation; elastic X-ray scattering near the nodes of the reciprocal lattice (Huang scattering). Those which detect more local effects: low-temperature resistivity measurement; positron capture and annihilation; local scattering far from the reciprocal lattice nodes. Experiments involving both short and long-range effects can always be found. This is the case for example with the dechanneling of α particles by defects. Certain of the experimental methods quoted above apply also to the study of point defect clusters. These methods are illustrated by some of their most striking results which over the last twenty years have refined our knowledge of point defects and defect clusters: length and crystal parameter measurements; diffuse X-ray scattering; low-temperature resistivity measurements; ion emission microscopy; electron microscopy; elastoresistivity [fr

A postprocessing method based on chirp Z transform for FDTD calculation of point defect states in two-dimensional phononic crystals

International Nuclear Information System (INIS)

Su Xiaoxing; Wang Yuesheng

2010-01-01

In this paper, a new postprocessing method for the finite difference time domain (FDTD) calculation of the point defect states in two-dimensional (2D) phononic crystals (PNCs) is developed based on the chirp Z transform (CZT), one of the frequency zooming techniques. The numerical results for the defect states in 2D solid/liquid PNCs with single or double point defects show that compared with the fast Fourier transform (FFT)-based postprocessing method, the method can improve the estimation accuracy of the eigenfrequencies of the point defect states significantly when the FDTD calculation is run with relatively few iterations; and furthermore it can yield the point defect bands without calculating all eigenfrequencies outside the band gaps. The efficiency and accuracy of the FDTD method can be improved significantly with this new postprocessing method.

A postprocessing method based on chirp Z transform for FDTD calculation of point defect states in two-dimensional phononic crystals

Energy Technology Data Exchange (ETDEWEB)

Su Xiaoxing, E-mail: xxsu@bjtu.edu.c [School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China); Wang Yuesheng [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China)

2010-09-01

In this paper, a new postprocessing method for the finite difference time domain (FDTD) calculation of the point defect states in two-dimensional (2D) phononic crystals (PNCs) is developed based on the chirp Z transform (CZT), one of the frequency zooming techniques. The numerical results for the defect states in 2D solid/liquid PNCs with single or double point defects show that compared with the fast Fourier transform (FFT)-based postprocessing method, the method can improve the estimation accuracy of the eigenfrequencies of the point defect states significantly when the FDTD calculation is run with relatively few iterations; and furthermore it can yield the point defect bands without calculating all eigenfrequencies outside the band gaps. The efficiency and accuracy of the FDTD method can be improved significantly with this new postprocessing method.

Analysis of the quadrupolar coupling effect on the line intensities using single-crystal nutation NMR in α-Al2O3 crystals

International Nuclear Information System (INIS)

Woo, Ae Ja; Cho, So Hyun; Han, Duk Young

2000-01-01

With 1D-nutation NMR for a spin I = 5/2 system, the relative line intensities of central and the inner- and outer-satellite transitions are calculated as functions of quadrupolar coupling ω Q and rf pulse strength ω rf . Experimentally measured line intensities including both central and satellites are used to extract the values of ω Q and ω rf from nonlinear least-squares fits. The method is illustrated in α-Al 2 O 3 crystals (ruby and corundum) with the single-crystal 27 Al nutation NMR spectra. As a result, the new feature that the rf pulse strength shows reduced effect on the satellite transition lines according to the quadrupolar coupling is discussed by using fictitious spin-1/2 operator

Pair creation, motion, and annihilation of topological defects in two-dimensional nematic liquid crystals

Science.gov (United States)

Cortese, Dario; Eggers, Jens; Liverpool, Tanniemola B.

2018-02-01

We present a framework for the study of disclinations in two-dimensional active nematic liquid crystals and topological defects in general. The order tensor formalism is used to calculate exact multiparticle solutions of the linearized static equations inside a planar uniformly aligned state so that the total charge has to vanish. Topological charge conservation then requires that there is always an equal number of q =1 /2 and q =-1 /2 charges. Starting from a set of hydrodynamic equations, we derive a low-dimensional dynamical system for the parameters of the static solutions, which describes the motion of a half-disclination pair or of several pairs. Within this formalism, we model defect production and annihilation, as observed in experiments. Our dynamics also provide an estimate for the critical density at which production and annihilation rates are balanced.

Effect of grain defects on the mechanical behavior of nickel-based single crystal superalloy

Energy Technology Data Exchange (ETDEWEB)

Tang, Haibin; Guo, Haiding [Nanjing Univ. of Aeronautics and Astronautics (China). Jiangsu Province Key Lab. of Aerospace Power System

2017-03-15

In this paper, a single crystal (SC) partition model, consisting of primary grains and grain defects, is proposed to simulate the weakening effect of grain defects generated at geometric discontinuities of SC materials. The plastic deformation of SC superalloy is described with the modified yield criterion, associated flow rule and hardening law. Then a bicrystal model containing only one group of misoriented grains under uniaxial loading is constructed and analyzed in the commercial finite element software ABAQUS. The simulation results indicate that the yield strength and elastic modulus of misoriented grains, which are determined by the crystallographic orientation, have a significant effect on the stress distribution of the bicrystal model. A critical stress, which is calculated by the stress state at critical regions, is proposed to evaluate the local stress rise at the sub-boundary of primary and misoriented grains.

Effect of grain defects on the mechanical behavior of nickel-based single crystal superalloy

International Nuclear Information System (INIS)

Tang, Haibin; Guo, Haiding

2017-01-01

In this paper, a single crystal (SC) partition model, consisting of primary grains and grain defects, is proposed to simulate the weakening effect of grain defects generated at geometric discontinuities of SC materials. The plastic deformation of SC superalloy is described with the modified yield criterion, associated flow rule and hardening law. Then a bicrystal model containing only one group of misoriented grains under uniaxial loading is constructed and analyzed in the commercial finite element software ABAQUS. The simulation results indicate that the yield strength and elastic modulus of misoriented grains, which are determined by the crystallographic orientation, have a significant effect on the stress distribution of the bicrystal model. A critical stress, which is calculated by the stress state at critical regions, is proposed to evaluate the local stress rise at the sub-boundary of primary and misoriented grains.

The influence of dislocation defects on the sintering kinetics of ferrite powders

International Nuclear Information System (INIS)

Fadeeva, I.V.; Portnoi, K.V.; Oleinikov, N.N.; Tretyakov, D.Yu.

1976-01-01

In the presented paper are given the results of the X-ray investigations of non-equilibrium defects in powders of nickel-zinc ferrites. The block size, the crystal lattice microdistortions and stacking faults of two types were determined by the method of Fourier's analysis of diffraction line profiles. The influence of similar defects on sintering of ferrite powders was shown. The kinetics data on densification processes occurring during sintering of active powders can adequately be described in terms of the equations which describe reactions in the solid phase, where the interaction limit is on the border of the phases with different geomtery of the border. The correlation between the behaviour of compacts and dislocation defects in powders during sintering is established

Point defects in solids

International Nuclear Information System (INIS)

Anon.

1978-01-01

The principal properties of point defects are studied: thermodynamics, electronic structure, interactions with etended defects, production by irradiation. Some measuring methods are presented: atomic diffusion, spectroscopic methods, diffuse scattering of neutron and X rays, positron annihilation, molecular dynamics. Then points defects in various materials are investigated: ionic crystals, oxides, semiconductor materials, metals, intermetallic compounds, carbides, nitrides [fr

Influence of crystal defects on the chemical reactivity of recoil atoms in oxygen-containing chromium compounds

International Nuclear Information System (INIS)

Costea, T.

1969-01-01

The influence of crystal defects on the chemical reactivity of recoil atoms produced by the reaction 50 Cr (n,γ) 51 Cr in oxygen-containing chromium compounds has been studied. Three methods have been used to introduce the defects: doping (K 2 CrO 4 doped with BaCrO 4 ), irradiation by ionizing radiation (K 2 CrO 4 irradiated in the presence of Li 2 CO 3 ) and non-stoichiometry (the semi-conducting oxides of the CrO 3 -Cr 2 O 3 series). The thermal annealing kinetics of the irradiated samples have been determined, and the activation energy has been calculated. In all cases it has been observed that there is a decrease in the activation energy for thermal annealing in the presence of the defects. In order to explain the annealing process, an electronic mechanism has been proposed based on the interaction between the recoil species and the charge-carriers (holes or electrons). (author) [fr

Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

International Nuclear Information System (INIS)

Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

2000-01-01

The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

Left-right correlation in coupled F-center defects.

Science.gov (United States)

Janesko, Benjamin G

2016-08-07

This work explores how left-right correlation, a textbook problem in electronic structure theory, manifests in a textbook example of electrons trapped in crystal defects. I show that adjacent F-center defects in lithium fluoride display symptoms of "strong" left-right correlation, symptoms similar to those seen in stretched H2. Simulations of UV/visible absorption spectra qualitatively fail to reproduce experiment unless left-right correlation is taken into account. This is of interest to both the electronic structure theory and crystal-defect communities. Theorists have a new well-behaved system to test their methods. Crystal-defect groups are cautioned that the approximations that successfully model single F-centers may fail for adjacent F-centers.

Left-right correlation in coupled F-center defects

International Nuclear Information System (INIS)

Janesko, Benjamin G.

2016-01-01

This work explores how left-right correlation, a textbook problem in electronic structure theory, manifests in a textbook example of electrons trapped in crystal defects. I show that adjacent F-center defects in lithium fluoride display symptoms of “strong” left-right correlation, symptoms similar to those seen in stretched H 2 . Simulations of UV/visible absorption spectra qualitatively fail to reproduce experiment unless left-right correlation is taken into account. This is of interest to both the electronic structure theory and crystal-defect communities. Theorists have a new well-behaved system to test their methods. Crystal-defect groups are cautioned that the approximations that successfully model single F-centers may fail for adjacent F-centers.

Laser guiding of cold atoms in photonic crystals

International Nuclear Information System (INIS)

Tarasishin, A V; Magnitskiy, Sergey A; Shuvaev, V A; Zheltikov, Aleksei M

2000-01-01

The possibility of using photonic crystals with a lattice defect for the laser guiding of cold atoms is analysed. We have found a configuration of a photonic-crystal lattice and a defect ensuring the distribution of a potential in the defect mode of the photonic crystal allowing the guiding of cold atoms along the defect due to the dipole force acting on atoms. Based on quantitative estimates, we have demonstrated that photonic crystals with a lattice defect permit the guiding of atoms with much higher transverse temperatures and a much higher transverse localisation degree than in the case of hollow-core fibres. (laser applications and other topics in quantum electronics)

Comparison of Five Computational Methods for Computing Q Factors in Photonic Crystal Membrane Cavities

DEFF Research Database (Denmark)

Novitsky, Andrey; de Lasson, Jakob Rosenkrantz; Frandsen, Lars Hagedorn

2017-01-01

Five state-of-the-art computational methods are benchmarked by computing quality factors and resonance wavelengths in photonic crystal membrane L5 and L9 line defect cavities. The convergence of the methods with respect to resolution, degrees of freedom and number of modes is investigated. Specia...

Luminescence and defects creation in Ce3+-doped YAlO3 and Lu0.3Y0.7AlO3 crystals

International Nuclear Information System (INIS)

Blazek, K.; Nejezchleb, K.; Krasnikov, A.; Savikhina, T.; Zazubovich, S.; Nikl, M.

2005-01-01

Luminescence, energy transfer and defects creation processes were studied for the Ce 3+ -doped YAlO 3 and Lu x Y 1-x AlO 3 (x=0.3) crystals in the temperature range 4.2-300 K under selective photoexcitation in the energy range 3.5-11.5 eV. For the first time, defects creation spectra were measured and analyzed. Influence of the charge and ionic radii of co-doping ions on the luminescence and defects creation efficiency was considered. The origin of the defects created and possible mechanisms of their formation were discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

International Nuclear Information System (INIS)

Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons; Kirchartz, Thomas; Simsek Sanli, Ekin; Aken, Peter A. van; Ramasse, Quentin M.; Kleebe, Hans-Joachim; Azulay, Doron; Balberg, Isaac; Millo, Oded; Cojocaru-Miredin, Oana; Barragan-Yani, Daniel; Albe, Karsten; Haarstrich, Jakob; Ronning, Carsten

2016-01-01

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se) 2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se) 2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Positron annihilation and thermoluminescence studies of thermally induced defects in α-Al2O3 single crystals

International Nuclear Information System (INIS)

Muthe, K P; Gupta, S K; Sudarshan, K; Pujari, P K; Kulkarni, M S; Rawat, N S; Bhatt, B C

2009-01-01

α-Al 2 O 3 crystals were subjected to different thermal treatments at a temperature of 1500 deg. C in a strongly reducing ambience of carbon and vacuum. Positron annihilation spectroscopy (PAS) and thermally stimulated luminescence (TL) studies were carried out to understand the nature of defects generated. Results show the presence of aluminium vacancies in crystals annealed in vacuum. On annealing in the presence of graphite, ingress of carbon in these vacancies is indicated by different PAS measurements. A simultaneous enhancement of dosimetry properties has been observed. The study provides evidence that association of carbon with aluminium vacancies helps in creation of effective dosimetry traps.

Defect properties from X-ray scattering experiments

International Nuclear Information System (INIS)

Peisl, H.

1976-01-01

Lattice distortions due to defects in crystals can be studied most directly by elastic X-ray or neutron scattering experiments. The 'size' of the defects can be determined from the shift of the Bragg reflections. Defect induced diffuse scattering intensity close to and between Bragg reflections gives information on the strength and symmetry of the distortion fields and yields the atomic structure of point defects (interstitials, vacancies, small aggregates). Diffuse scattering is a very sensitive method to decide whether defects are present as isolated point defects or have formed aggregates. X-ray scattering has been used to study defects produced in various ionic crystals by γ- and neutron irradiation. After an introduction to the principles of the method the experimental results will be reviewed and discussed in some detail. (orig.) [de

Correction for the twist and the conical defects of a sagittaly bent crystal

CERN Document Server

Ferrer, J L

1999-01-01

The symmetrical bending of the focusing crystal of a double X-ray monochromator is a difficult problem. Indeed, the slope due to the curvature is usually three orders of magnitude higher than the accepted slope error (typically, the Darwin width of the crystal). In these conditions, even a low parasitic slope error induced by the bending process may lead to quite a strong intensity decrease. When the bending moment is applied, the main parasitic distortions which may appear are typically the anticlastic curvature, the inhomogeneous sagittal curvature, the conical shape and the twist. On the D2AM beamline at the ESRF, a program called CHKC2 has been developed to correct on-line the latter two distortions: the conical shape and the twist. On this beamline the X-ray beam, which has been collimated by a grazing angle mirror, is monochromatized first by a flat silicon crystal, and then diffracted by the sagittaly curved crystal. A fluorescent screen gives an image of this diffracted beam. The CHKC2 program records...

On beam shaping of the field radiated by a line source coupled to finite or infinite photonic crystals.

Science.gov (United States)

Ceccuzzi, Silvio; Jandieri, Vakhtang; Baccarelli, Paolo; Ponti, Cristina; Schettini, Giuseppe

2016-04-01

Comparison of the beam-shaping effect of a field radiated by a line source, when an ideal infinite structure constituted by two photonic crystals and an actual finite one are considered, has been carried out by means of two different methods. The lattice sums technique combined with the generalized reflection matrix method is used to rigorously investigate the radiation from the infinite photonic crystals, whereas radiation from crystals composed of a finite number of rods along the layers is analyzed using the cylindrical-wave approach. A directive radiation is observed with the line source embedded in the structure. With an increased separation distance between the crystals, a significant edge diffraction appears that provides the main radiation mechanism in the finite layout. Suitable absorbers are implemented to reduce the above-mentioned diffraction and the reflections at the boundaries, thus obtaining good agreement between radiation patterns of a localized line source coupled to finite and infinite photonic crystals, when the number of periods of the finite structure is properly chosen.

Frequency splitter based on the directional emission from surface modes in dielectric photonic crystal structures.

Science.gov (United States)

Tasolamprou, Anna C; Zhang, Lei; Kafesaki, Maria; Koschny, Thomas; Soukoulis, Costas M

2015-06-01

We demonstrate the numerical design and the experimental validation of frequency dependent directional emission from a dielectric photonic crystal structure. The wave propagates through a photonic crystal line-defect waveguide, while a surface layer at the termination of the photonic crystal enables the excitation of surface modes and a subsequent grating layer transforms the surface energy into outgoing propagating waves of the form of a directional beam. The angle of the beam is controlled by the frequency and the structure operates as a frequency splitter in the intermediate and far field region.

Luminescence and photo-thermally stimulated defect-creation processes in Bi.sup.3+./sup.-doped single crystals of lead tungstate

Czech Academy of Sciences Publication Activity Database

Buryi, Maksym; Boháček, Pavel; Chernenko, K.; Krasnikov, A.; Laguta, Valentyn; Mihóková, Eva; Nikl, Martin; Zazubovich, S.

2016-01-01

Roč. 123, č. 5 (2016), 895-910 ISSN 0370-1972 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : defects * EPR * excitons * PbWO 4 :Bi single crystals * photoluminescence * thermoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.674, year: 2016

Effect of high temperature annealing on defects and optical properties of ZnO single crystals

International Nuclear Information System (INIS)

Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

2012-01-01

Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se{sub 2} thin films for solar cells - a review

Energy Technology Data Exchange (ETDEWEB)

Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Kirchartz, Thomas [Forschungszentrum Juelich, Institut fuer Energie- und Klimaforschung (IEK-5), Photovoltaik, 52428, Juelich (Germany); Simsek Sanli, Ekin; Aken, Peter A. van [Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart (Germany); Ramasse, Quentin M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury, WA4 4AD (United Kingdom); Kleebe, Hans-Joachim [Technische Universitaet Darmstadt, Institut fuer Angewandte Geowissenschaften, Schnittspahnstrasse 9, 64287, Darmstadt (Germany); Azulay, Doron; Balberg, Isaac; Millo, Oded [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Cojocaru-Miredin, Oana [RWTH Aachen, Physikalisches Institut IA, Sommerfeldstr. 14, 52074, Aachen (Germany); Barragan-Yani, Daniel; Albe, Karsten [Technische Universitaet Darmstadt, FG Materialmodellierung, Jovanka-Bontschits-Str. 2, 64287, Darmstadt (Germany); Haarstrich, Jakob; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany)

2016-05-15

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se){sub 2} thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se){sub 2} thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The detection of radiation defects by means of the Kossel effect investigated in proton-irradiated GaP

International Nuclear Information System (INIS)

Ullrich, H.J.; Rolle, S.; Geist, V.; Stephan, D.

1984-01-01

The line intensity of Ga-K/sub α/- and P-K/sub α/-Kossel reflections from GaP irradiated by 0.3 to 1.3 MeV protons in a wide dose range (10 14 to 5 x 10 17 cm -2 ) has been investigated. The excitation of the characteristic X-rays inside the crystal lattice has been performed either by 40 keV electrons or 1.3 MeV protons. It is established that, in contrast to the P-K/sub α/-lines, certain Ga-K/sub α/-reflections respond very sensitively to radiation defects, manifest as increase or decrease in line intensity. The reason is probably a modification of extinction effects caused by lattice defects. The different behaviour of these phenomena is discussed and an explanation proposed. The lattice disorder is determined by channeling backscattering measurements. (author)

Characterization of a defective PbWO4 crystal cut along the a-c crystallographic plane: structural assessment and a novel photoelastic stress analysis

Science.gov (United States)

Montalto, L.; Natali, P. P.; Daví, F.; Mengucci., P.; Paone, N.; Rinaldi, D.

2017-12-01

Among scintillators, the PWO is one of the most widely used, for instance in CMS calorimeter at CERN and PANDA project. Crystallographic structure and chemical composition as well as residual stress condition, are indicators of homogeneity and good quality of the crystal. In this paper, structural characterization of a defective PbWO4 (PWO) crystal has been performed by X-ray Diffraction (XRD), Energy Dispersive Spectroscopy (EDS) and Photoelasticity in the unusual (a, c) crystallographic plane. XRD and EDS analysis have been used to investigate crystallographic orientation and chemical composition, while stress distribution, which indicates macroscopic inhomogeneities and defects, has been obtained by photoelastic approaches, in Conoscopic and Sphenoscopic configuration. Since the sample is cut along the (a, c) crystallographic plane, a new method is proposed for the interpretation of the fringe pattern. The structural analysis has detected odds from the nominal lattice dimension, which can be attributed to the strong presence of Pb and W. A strong inhomogeneity over the crystal sample has been revealed by the photoelastic inspection. The results give reliability to the proposed procedure which is exploitable in crystals with other structures.

Sliding three-phase contact line of printed droplets for single-crystal arrays

International Nuclear Information System (INIS)

Kuang, Minxuan; Wu, Lei; Li, Yifan; Gao, Meng; Zhang, Xingye; Jiang, Lei; Song, Yanlin

2016-01-01

Controlling the behaviours of printed droplets is an essential requirement for inkjet printing of delicate three-dimensional (3D) structures or high-resolution patterns. In this work, molecular deposition and crystallization are regulated by manipulating the three-phase contact line (TCL) behaviour of the printed droplets. The results show that oriented single-crystal arrays are fabricated based on the continuously sliding TCL. Owing to the sliding of the TCL on the substrate, the outward capillary flow within the evaporating droplet is suppressed and the molecules are brought to the centre of the droplet, resulting in the formation of a single crystal. This work provides a facile strategy for controlling the structures of printed units by manipulating the TCL of printed droplets, which is significant for realizing high-resolution patterns and delicate 3D structures. (paper)

Phase time delay and Hartman effect in a one-dimensional photonic crystal with four-level atomic defect layer

Science.gov (United States)

Jamil, Rabia; Ali, Abu Bakar; Abbas, Muqaddar; Badshah, Fazal; Qamar, Sajid

2017-08-01

The Hartman effect is revisited using a Gaussian beam incident on a one-dimensional photonic crystal (1DPC) having a defect layer doped with four-level atoms. It is considered that each atom of the defect layer interacts with three driving fields, whereas a Gaussian beam of width w is used as a probe light to study Hartman effect. The atom-field interaction inside the defect layer exhibits electromagnetically induced transparency (EIT). The 1DPC acts as positive index material (PIM) and negative index material (NIM) corresponding to the normal and anomalous dispersion of the defect layer, respectively, via control of the phase associated with the driving fields and probe detuning. The positive and negative Hartman effects are noticed for PIM and NIM, respectively, via control of the relative phase corresponding to the driving fields and probe detuning. The advantage of using four-level EIT system is that a much smaller absorption of the transmitted beam occurs as compared to three-level EIT system corresponding to the anomalous dispersion, leading to negative Hartman effect.

Physics of radiation effects in crystals

CERN Document Server

Johnson, RA

1986-01-01

``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor ma

A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si

Science.gov (United States)

Sueoka, Koji; Kamiyama, Eiji; Kariyazaki, Hiroaki

2012-05-01

In 1982, Voronkov presented a model describing point defect behavior during the growth of single crystal Si from a melt and derived an expression to predict if the crystal was vacancy- or self-interstitial-rich. Recently, Vanhellemont claimed that one should take into account the impact of compressive stress introduced by the thermal gradient at the melt/solid interface by considering the hydrostatic pressure dependence of the formation enthalpy of the intrinsic point defects. To evaluate the impact of thermal stress more correctly, the pressure dependence of both the formation enthalpy (Hf) and the migration enthalpy (Hm) of the intrinsic point defects should be taken into account. Furthermore, growing single crystal Si is not under hydrostatic pressure but almost free of external pressure (generally in Ar gas under reduced pressure). In the present paper, the dependence of Hf and Hm on the pressure P, or in other words, the pressure dependence of the formation energy (Ef) and the relaxation volume (vf), is quantified by density functional theory calculations. Although a large number of ab initio calculations of the properties of intrinsic point defects have been published during the last years, calculations for Si crystals under pressure are rather scarce. For vacancies V, the reported pressure dependences of HfV are inconsistent. In the present study, by using 216-atom supercells with a sufficient cut-off energy and mesh of k-points, the neutral I and V are found to have nearly constant formation energies EfI and EfV for pressures up to 1 GPa. For the relaxation volume, vfI is almost constant while vfV decreases linearly with increasing pressure P. In case of the hydrostatic pressure Ph, the calculated formation enthalpy HfI and migration enthalpy HmI at the [110] dumbbell site are given by HfI = 3.425 - 0.057 × Ph (eV) and HmI = 0.981 - 0.039 × Ph (eV), respectively, with Ph given in GPa. The calculated HfV and HmV dependencies on Ph given by HfV = 3.543 - 0

Helium interaction with vacancy-type defects created in silicon carbide single crystal

Science.gov (United States)

Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.

2013-05-01

Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

Helium interaction with vacancy-type defects created in silicon carbide single crystal

Energy Technology Data Exchange (ETDEWEB)

Linez, F., E-mail: florence.linez@aalto.fi [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France); Gilabert, E. [CENBG, U.R.A. 451 CNRS, Université de Bordeaux I, BP120, Le Haut Vigneau, 33175 Gradignan Cedex (France); Debelle, A. [CSNSM, Univ. Paris-Sud, CNRS-IN2P3, 91405 Orsay Campus (France); Desgardin, P.; Barthe, M.-F. [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France)

2013-05-15

Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H–SiC single crystals have been implanted with 50 keV-He ions at 2 × 10{sup 14} and 10{sup 15} cm{sup −2} and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

An Integrative Biosensor Based on Contra-Directional Coupling Two-dimensional Photonic Crystal Waveguides

International Nuclear Information System (INIS)

Xiao-Yu, Mao; Di-Bi, Yao; Ling-Yun, Zhao; Yi-Dong, Huang; Wei, Zhang; Jiang-De, Peng

2008-01-01

We propose an integrative biochemical sensor utilizing the dip in the transmission spectrum of a normal single-line defect photonic crystal (PC) waveguide, which has a contra-directional coupling with another PC waveguide. When the air holes in the PC slab are filled with a liquid analyte with different refractive indices, the dip has a wavelength shift By detecting the output power variation at a certain fixed wavelength, a sensitivity of 1.2 × 10 −4 is feasible. This structure is easy for integration due to its plane waveguide structure and omissible pump source. In addition, high signal to noise ratio can be expected because signal transmits via a normal single-line defect PC waveguide instead of the PC hole area or analyte

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

Influence of defects on sub-Å optical linewidths in Eu{sup 3+}: Y{sub 2}O{sub 3} particles

Energy Technology Data Exchange (ETDEWEB)

Oliveira Lima, Karmel de [PSL Research University, Chimie ParisTech – CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Rocha Gonçalves, Rogéria [Departamento de Química, Faculdade de Filosofia Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Avenida Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, São Paulo, Brasil (Brazil); Giaume, Domitille [PSL Research University, Chimie ParisTech – CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Ferrier, Alban, E-mail: alban.ferrier@chimie-paristech.fr [PSL Research University, Chimie ParisTech – CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Goldner, Philippe, E-mail: philippe.goldner@chimie-paristech.fr [PSL Research University, Chimie ParisTech – CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France)

2015-12-15

Rare earth doped nanocrystals have been recently suggested as useful materials for applications in quantum information processing. To reach optical properties closer to bulk crystals ones, it is still necessary to reduce the defects that can arise in nanoscale structures. Here, we probe the defects level by monitoring the inhomogeneous broadening of the {sup 7}F{sub 0}→{sup 5}D{sub 0} transition in particles of 0.3% at% Eu{sup 3+}:Y{sub 2}O{sub 3}. We find that lines as narrow as 14 GHz (0.015 nm), a value comparable to single crystals, can be obtained in 150 nm particles calcinated at 1200 °C. The additional broadening observed for particles calcinated at lower temperature is attributed to defects inside crystallites and not to surface effects. A linear correlation is also observed between optical and Raman linewidths, suggesting that both processes are sensitive to the same defects. {sup 5}D{sub 0} excited state lifetimes are well described by a model based on an effective refractive index and we conclude that the defects causing the inhomogeneous broadening have no effect on the excited state population.

Springer Handbook of Crystal Growth

CERN Document Server

Dhanaraj, Govindhan; Prasad, Vishwanath; Dudley, Michael

2010-01-01

Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary specia...

HEK293T cell lines defective for O-linked glycosylation.

Directory of Open Access Journals (Sweden)

James M Termini

Full Text Available Here we describe derivatives of the HEK293T cell line that are defective in their ability to generate mucin-type O-linked glycosylation. Using CRISPR/Cas9 and a single-cell GFP-sorting procedure, the UDP-galactose-4-epimerase (GALE, galactokinase 1 (GALK1, and galactokinase 2 (GALK2 genes were knocked out individually and in combinations with greater than 90% of recovered clones having the desired mutations. Although HEK293T cells are tetraploid, we found this approach to be an efficient method to target and disrupt all 4 copies of the target gene. Deficient glycosylation in the GALE knockout cell line could be rescued by the addition of galactose and N-acetylgalactosamine (GalNAc to the cell culture media. However, when key enzymes of the galactose/GalNAc salvage pathways were disrupted in tandem (GALE+GALK1 or GALE+GALK2, O-glycosylation was eliminated and could not be rescued by the addition of either galactose plus GalNAc or UDP-galactose plus UDP-GalNAc. GALK1 and GALK2 are key enzymes of the galactose/GalNAc salvage pathways. Mass spectrometry was performed on whole cell lysate of the knockout cell lines to verify the glycosylation phenotype. As expected, the GALE knockout was almost completely devoid of all O-glycosylation, with minimal glycosylation as a result of functional salvage pathways. However, the GALE+GALK1 and GALE+GALK2 knockout lines were devoid of all O-glycans. Mass spectrometry analysis revealed that the disruption of GALE, GALK1, and GALE+GALK2 had little effect on the N-glycome. But when GALE was knocked out in tandem with GALK1, N-glycans were exclusively of the high mannose type. Due to the well-characterized nature of these five knockout cell lines, they will likely prove useful for a wide variety of applications.

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

Science.gov (United States)

Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

2017-12-01

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

Investigation of Structural Re-ordering of Hydrogen Bonds in LiNbO3:Mg Crystals Around the Threshold Concentration of Magnesium

Science.gov (United States)

Sidorov, N. V.; Teplyakova, N. A.; Palatnikov, M. N.; Bobreva, L. A.

2017-09-01

Crystals of LiNbO3congr and LiNbO3:Mg (0.19-5.91 mole %) were studied by IR and Raman spectroscopy. It was found that the intensities of the bands corresponding to the stretching vibrations of the OH groups in the IR spectra of LiNbO3:Mg crystals change and components of the bands disappear with increase of the Mg content. This was explained by disappearance of the OH groups close to {Nb}_{Li}^{4+}-{V}_{Li}- defects as a result of displacement of NbLi defects by Mg cations. In the Raman spectra of the LiNbO3:Mg (5.1 mole %) compared with the congruent crystal the lines corresponding to the vibrations of oxygen atoms in the oxygen octahedra and the stretching bridge vibrations of the oxygen atoms along the polar axis become broader, and new low-intensity lines that may correspond to pseudoscalar vibrations of A2-type symmetry also appear. The broadening of the lines is due to deformation of the oxygen octahedra caused both by increase of the Mg content in the crystal structure and by change in the localization of the protons. Suppression of the photorefraction effect in the LiNbO3:Mg crystals with Mg contents above the threshold level can be explained by change in the localization of the protons in the structure and by screening of the space charge field.

Study on the intrinsic defects in tin oxide with first-principles method

Science.gov (United States)

Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

2018-04-01

First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

Radiation damage in the alkali halide crystals

International Nuclear Information System (INIS)

Diller, K.M.

1975-10-01

A general review is given of the experimental data on radiation damage in the alkali halide crystals. A report is presented of an experimental investigation of irradiation produced interstitial dislocation loops in NaCl. These loops are found to exhibit the usual growth and coarsening behaviour during thermal annealing which operates by a glide and self-climb mechanism. It is shown that the recombination of defects in these crystals is a two stage process, and that the loss of interstitials stabilized at the loops is caused by extrinsic vacancies. The theoretical techniques used in simulating point defects in ionic crystals are described. Shell model potentials are derived for all the alkali halide crystals by fitting to bulk crystal data. The fitting is supplemented by calculations of the repulsive second neighbour interactions using methods based on the simple electron gas model. The properties of intrinsic and substitutional impurity defects are calculated. The HADES computer program is used in all the defect calculations. Finally the report returns to the problems of irradiation produced interstitial defects. The properties of H centres are discussed; their structure, formation energies, trapping at impurities and dimerization. The structure, formation energies and mobility of the intermediate and final molecular defects are then discussed. The thermodynamics of interstitial loop formation is considered for all the alklai halide crystals. The nucleation of interstitial loops in NaCl and NaBr is discussed, and the recombination of interstitial and vacancy defects. The models are found to account for all the main features of the experimental data. (author)

Development of a model for on-line control of crystal growth by the AHP method

Science.gov (United States)

Gonik, M. A.; Lomokhova, A. V.; Gonik, M. M.; Kuliev, A. T.; Smirnov, A. D.

2007-05-01

The possibility to apply a simplified 2D model for heat transfer calculations in crystal growth by the axial heat close to phase interface (AHP) method is discussed in this paper. A comparison with global heat transfer calculations with the CGSim software was performed to confirm the accuracy of this model. The simplified model was shown to provide adequate results for the shape of the melt-crystal interface and temperature field in an opaque (Ge) and a transparent crystal (CsI:Tl). The model proposed is used for identification of the growth setup as a control object, for synthesis of a digital controller (PID controller at the present stage) and, finally, in on-line simulations of crystal growth control.

Luminescence and photo-thermally stimulated defect creation processes in PbWO.sub.4./sub.:Mo,La,Y (PWO III) crystals

Czech Academy of Sciences Publication Activity Database

Auffray, E.; Korjik, M.; Laguta, Valentyn; Zazubovich, S.

2015-01-01

Roč. 252, č. 10 (2015), s. 2259-2267 ISSN 0370-1972 Institutional support: RVO:68378271 Keywords : defects * ESR * PbWO4:Mo * La * Y crystals * photoluminescence * thermoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.522, year: 2015

Quasimetallic silicon micromachined photonic crystals

International Nuclear Information System (INIS)

Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

2001-01-01

We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

Point and line defects which are common to both degraded light emitting diodes and plastically deformed GaAs

International Nuclear Information System (INIS)

Liliental, Z.

1983-01-01

Similar dipoles with Burger's vector b = a/2 [101] (also referred to as dark line defects) were found in the active layer of degraded light emitting diodes (LED's) and in plastically deformed GaAs. The dependence of characteristic x-ray production of electron channeling conditions has been used in an electron microscope to study point defects in the neighbourhood of these dipoles. Our results are consistent with the occurence of I/sub As/, I/sub As/ +V/sub Ga/, V/sub Ga/ and IAs in descending order of likelihood. Of these, I/sub As/ +V/sub Ga/ can explain the dislocation climb without any extra point defects involved in such process

Effect of carbon additions on the as-cast microstructure and defect formation of a single crystal Ni-based superalloy

International Nuclear Information System (INIS)

Al-Jarba, K.A.; Fuchs, G.E.

2004-01-01

In an effort to reduce grain defects in large single crystal Ni-base superalloy components, carbon is intentionally added. In this study, the effect of carbon additions on the microstructure and solidification defect formation of a model Ni-based superalloy, LMSX-1, was examined. The results show that the tendency of the alloy to form all types of solidification defects decreased as the carbon content increased. The as-cast microstructures also exhibited a decrease in the amount of γ-γ' eutectic structure and an increase in the volume fraction of carbides and porosity, as the carbon content was increased. The carbides formed in these alloys were mostly of script-type MC carbides which formed continuous, dendritic networks in the interdendritic region. Microprobe analysis of the as-cast structures showed that the partitioning coefficients did not change with carbon additions. Therefore, the reduction in defect formation with increasing carbon content could not be attributed to changes in segregation behavior of alloying elements. Instead, the presence of these carbides in the interdendritic regions of the alloy appeared to have prevented the thermosolutal fluid flow

Literature Review: Theory and Application of In-Line Inspection Technologies for Oil and Gas Pipeline Girth Weld Defection

Science.gov (United States)

Feng, Qingshan; Li, Rui; Nie, Baohua; Liu, Shucong; Zhao, Lianyu; Zhang, Hong

2016-01-01

Girth weld cracking is one of the main failure modes in oil and gas pipelines; girth weld cracking inspection has great economic and social significance for the intrinsic safety of pipelines. This paper introduces the typical girth weld defects of oil and gas pipelines and the common nondestructive testing methods, and systematically generalizes the progress in the studies on technical principles, signal analysis, defect sizing method and inspection reliability, etc., of magnetic flux leakage (MFL) inspection, liquid ultrasonic inspection, electromagnetic acoustic transducer (EMAT) inspection and remote field eddy current (RFDC) inspection for oil and gas pipeline girth weld defects. Additionally, it introduces the new technologies for composite ultrasonic, laser ultrasonic, and magnetostriction inspection, and provides reference for development and application of oil and gas pipeline girth weld defect in-line inspection technology. PMID:28036016

Radiation-induced defect-formation in lithium hydride and deuteride monocrystals. [Electron and X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Pustovarov, V.A.; Betenekova, T.A.; Zav' yalov, N.A.; Cholakh, S.O. (Ural' skij Politekhnicheskij Inst., Sverdlovsk (USSR))

1983-08-01

Methods of stationary and pulse absorption spectroscopy were used to investigate into processes of formation and decay of radiation defects in cubic LiH and LiD crystals. F- and V-centers form at low temperatures during crystal irradiation by photons, creating excitons selectively, accelerator electrons, X-ray radiation. Analysis of possible mechanisms of defect formation shows that radiation defect formation in LiH is based on radiationless exciton decay. It is shown that efficiency of F- and V-centers generation in pure and impure crystals in 80-298 K range is the same. Exciton decay with formation of Frenkel radiation defects in pure LiH and LiD crystals takes place, probably, in regular crystal lattice points. Process of radiation defect formation as a result of near activator exciton decay takes place in impure LiH-Na, LiD-Na crystals.

Intrinsic thermal expansion of crystal defects

International Nuclear Information System (INIS)

Ganne, J.-P.

1981-02-01

Although the phenomenon of thermal expansion has long been known, the intrinsic thermal expansion coefficient (ITEC) βsub(d) of a point defect, derived from its formation volume vsub(d), has never been measured directly. The differential dilatometer by interferometry built by ASTY and GILDER is described. It has allowed βsub(d) to be measured for several defects. Vacancies and small interstitial loops were produced in aluminium by low temperature (20 K) fast neutron irradiation followed by an anneal up to the beginning of stage III (160 K). The very high value of the measured ratio βsub(d)/β 0 (12+-4) is comparable with a lattice statics calculated (42) value (11.5 0 [fr

Investigation of the influence of crystal quality on Borrmann spectroscopy

International Nuclear Information System (INIS)

Kalaydzhyan, Aram

2012-12-01

The goal of thesis is to apply the dynamical theory of X-ray diffraction for perfect crystals to mosaic crystals, which are composed of slightly misoriented blocks. For this purpose statistical methods were used for the description of crystal defects. This concept was combined with the diffraction theory and implemented in code. This program was used for numerical simulations of diffraction processes in transmission geometry by plane barium titanate crystals. The computed dependencies on defects for Borrmann spectroscopy satisfy the initial expectations for medium orders of crystal defects qualitatively.

Investigation of the influence of crystal quality on Borrmann spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kalaydzhyan, Aram

2012-12-15

The goal of thesis is to apply the dynamical theory of X-ray diffraction for perfect crystals to mosaic crystals, which are composed of slightly misoriented blocks. For this purpose statistical methods were used for the description of crystal defects. This concept was combined with the diffraction theory and implemented in code. This program was used for numerical simulations of diffraction processes in transmission geometry by plane barium titanate crystals. The computed dependencies on defects for Borrmann spectroscopy satisfy the initial expectations for medium orders of crystal defects qualitatively.

Modeling local structure using crystal field and spin Hamiltonian parameters: the tetragonal FeK3+-OI2- defect center in KTaO3 crystal

International Nuclear Information System (INIS)

Gnutek, P; Rudowicz, C; Yang, Z Y

2009-01-01

The local structure and the spin Hamiltonian (SH) parameters, including the zero-field-splitting (ZFS) parameters D and (a+2F/3), and the Zeeman g factors g || and g perpendicular , are theoretically investigated for the Fe K 3+ -O I 2- center in KTaO 3 crystal. The microscopic SH (MSH) parameters are modeled within the framework of the crystal field (CF) theory employing the CF analysis (CFA) package, which also incorporates the MSH modules. Our approach takes into account the spin-orbit interaction as well as the spin-spin and spin-other-orbit interactions omitted in previous studies. The superposition model (SPM) calculations are carried out to provide input CF parameters for the CFA/MSH package. The combined SPM-CFA/MSH approach is used to consider various structural models for the Fe K 3+ -O I 2- defect center in KTaO 3 . This modeling reveals that the off-center displacement of the Fe 3+ ions, Δ 1 (Fe 3+ ), combined with an inward relaxation of the nearest oxygen ligands, Δ 2 (O 2- ), and the existence of the interstitial oxygen O I 2- give rise to a strong tetragonal crystal field. This finding may explain the large ZFS experimentally observed for the Fe K 3+ -O I 2- center in KTaO 3 . Matching the theoretical MSH predictions with the available structural data as well as electron magnetic resonance (EMR) and optical spectroscopy data enables predicting reasonable ranges of values of Δ 1 (Fe 3+ ) and Δ 2 (O 2- ) as well as the possible location of O I 2- ligands around Fe 3+ ions in KTaO 3 . The defect structure model obtained using the SPM-CFA/MSH approach reproduces very well the ranges of the experimental SH parameters D, g || and g perpendicular and importantly yields not only the correct magnitude of D but also the sign, unlike previous studies. More reliable predictions may be achieved when experimental data on (a+2F/3) and/or crystal field energy levels become available. Comparison of our results with those arising from alternative models existing

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Science.gov (United States)

Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

2017-09-01

It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

Channeling studies of impurity-defect interactions in silicon

International Nuclear Information System (INIS)

Wiggers, L.W.

1978-01-01

This thesis deals with the mechanism of defect production and interaction of introduced defects with impurity atoms in silicon single crystals. Defects are created by irradiation with energetic light particles (.2 - 3 MeV H + or He + ions). Mostly simple defects like vacancies and interstitials are produced during bombardment. (Auth.)

Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation

International Nuclear Information System (INIS)

Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Yang, G.; James, R. B.; Lee, W.; Cui, Y.; Burger, A.

2015-01-01

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material

Application of ENDOR-induced electron spin resonance to the study of point defects in solids

International Nuclear Information System (INIS)

Niklas, J.R.; Spaeth, J.M.

1980-01-01

The technique of ENDOR-induced ESR (EI-ESR) is applied to the investigation of several point defects in insulating crystals. It is shown that the lineshape of the EI-ESR spectrum depends on the ENDOR line used for the experiment. The EI-ESR technique allows the separation of overlapping ESR spectra in the presence of several defects. New applications are the selection of spin states and the determination of relative signs of spin-Hamiltonian parameters, the selection of centre orientations and the assignment of nuclei in complex ENDOR spectra, and the determination of quadrupole interactions which are not resolved in the ENDOR spectrum. (author)

Experimental and theoretical investigation of the rocking curves measured for MoKα X-ray characteristic lines in the double-crystal nondispersive scheme

International Nuclear Information System (INIS)

Marchenkov, N. V.; Chukhovskii, F. N.; Blagov, A. E.

2015-01-01

The rocking curves (RCs) for MoK α1 and MoK α2 characteristic X-ray lines have been experimentally and theoretically studied in the nondispersive scheme of an X-ray double-crystal TPC-K diffractometer. The results of measurements and theoretical calculations of double-crystal RCs for characteristic X-rays from tubes with a molybdenum anode and different widths of slits show that a decrease in the slit width leads to an increase in the relative contribution of the MoK α2 -line RC in comparison with the intensity of the tails of the MoK α1 -line RC. It is shown that the second peak of the MoK α2 line becomes increasingly pronounced in the tail of the MoK α1 -line RC with a decrease in the slit width. Two plane-parallel Si plates (input faces (110), diffraction vector h 〈220〉) were used as a monochromator crystal and a sample. The results of measuring double-crystal RCs are in good agreement with theoretical calculations

Investigation of the Band Structure of Graphene-Based Plasmonic Photonic Crystals.

Science.gov (United States)

Qiu, Pingping; Qiu, Weibin; Lin, Zhili; Chen, Houbo; Tang, Yixin; Wang, Jia-Xian; Kan, Qiang; Pan, Jiao-Qing

2016-09-09

In this paper, one-dimensional (1D) and two-dimensional (2D) graphene-based plasmonic photonic crystals (PhCs) are proposed. The band structures and density of states (DOS) have been numerically investigated. Photonic band gaps (PBGs) are found in both 1D and 2D PhCs. Meanwhile, graphene-based plasmonic PhC nanocavity with resonant frequency around 175 THz, is realized by introducing point defect, where the chemical potential is from 0.085 to 0.25 eV, in a 2D PhC. Also, the bending wvaguide and the beam splitter are realized by introducing the line defect into the 2D PhC.

Periodic order and defects in Ni-based inverse opal-like crystals on the mesoscopic and atomic scale

Science.gov (United States)

Chumakova, A. V.; Valkovskiy, G. A.; Mistonov, A. A.; Dyadkin, V. A.; Grigoryeva, N. A.; Sapoletova, N. A.; Napolskii, K. S.; Eliseev, A. A.; Petukhov, A. V.; Grigoriev, S. V.

2014-10-01

The structure of inverse opal crystals based on nickel was probed on the mesoscopic and atomic levels by a set of complementary techniques such as scanning electron microscopy and synchrotron microradian and wide-angle diffraction. The microradian diffraction revealed the mesoscopic-scale face-centered-cubic (fcc) ordering of spherical voids in the inverse opal-like structure with unit cell dimension of 750±10nm. The diffuse scattering data were used to map defects in the fcc structure as a function of the number of layers in the Ni inverse opal-like structure. The average lateral size of mesoscopic domains is found to be independent of the number of layers. 3D reconstruction of the reciprocal space for the inverse opal crystals with different thickness provided an indirect study of original opal templates in a depth-resolved way. The microstructure and thermal response of the framework of the porous inverse opal crystal was examined using wide-angle powder x-ray diffraction. This artificial porous structure is built from nickel crystallites possessing stacking faults and dislocations peculiar for the nickel thin films.

Slow-light-enhanced gain in active photonic crystal waveguides

DEFF Research Database (Denmark)

Ek, Sara; Hansen, Per Lunnemann; Chen, Yaohui

2014-01-01

Passive photonic crystals have been shown to exhibit a multitude of interesting phenomena, including slow-light propagation in line-defect waveguides. It was suggested that by incorporating an active material in the waveguide, slow light could be used to enhance the effective gain of the material......, which would have interesting application prospects, for example enabling ultra-compact optical amplifiers for integration in photonic chips. Here we experi- mentally investigate the gain of a photonic crystal membrane structure with embedded quantum wells. We find that by solely changing the photonic...... crystal structural parameters, the maximum value of the gain coefficient can be increased compared with a ridge waveguide structure and at the same time the spectral position of the peak gain be controlled. The experimental results are in qualitative agreement with theory and show that gain values similar...

Theoretical insights on the electro-thermal transport properties of monolayer MoS{sub 2} with line defects

Energy Technology Data Exchange (ETDEWEB)

Saha, Dipankar, E-mail: dipsah-etc@yahoo.co.in; Mahapatra, Santanu, E-mail: santanu@dese.iisc.ernet.in [Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012 (India)

2016-04-07

Two dimensional (2D) materials demonstrate several novel electrical, mechanical, and thermal properties which are quite distinctive to those of their bulk form. Among many others, one important potential application of the 2D material is its use in the field of energy harvesting. Owing to that, here we present a detailed study on electrical as well as thermal transport of monolayer MoS{sub 2}, in quasi ballistic regime. Besides the perfect monolayer in its pristine form, we also consider various line defects which have been experimentally observed in mechanically exfoliated MoS{sub 2} samples. For calculating various parameters related to the electrical transmission, we employ the non-equilibrium Green's function-density functional theory combination. However, to obtain the phonon transmission, we take help of the parametrized Stillinger-Weber potential which can accurately delineate the inter-atomic interactions for the monolayer MoS{sub 2}. Due to the presence of line defects, we observed significant reductions in both the charge carrier and the phonon transmissions through a monolayer MoS{sub 2} flake. Moreover, we also report a comparative analysis showing the temperature dependency of the thermoelectric figure of merit values, as obtained for the perfect as well as the other defective 2D samples.

Integrable microwave filter based on a photonic crystal delay line.

Science.gov (United States)

Sancho, Juan; Bourderionnet, Jerome; Lloret, Juan; Combrié, Sylvain; Gasulla, Ivana; Xavier, Stephane; Sales, Salvador; Colman, Pierre; Lehoucq, Gaelle; Dolfi, Daniel; Capmany, José; De Rossi, Alfredo

2012-01-01

The availability of a tunable delay line with a chip-size footprint is a crucial step towards the full implementation of integrated microwave photonic signal processors. Achieving a large and tunable group delay on a millimetre-sized chip is not trivial. Slow light concepts are an appropriate solution, if propagation losses are kept acceptable. Here we use a low-loss 1.5 mm-long photonic crystal waveguide to demonstrate both notch and band-pass microwave filters that can be tuned over the 0-50-GHz spectral band. The waveguide is capable of generating a controllable delay with limited signal attenuation (total insertion loss below 10 dB when the delay is below 70 ps) and degradation. Owing to the very small footprint of the delay line, a fully integrated device is feasible, also featuring more complex and elaborate filter functions.

The fractal character of radiation defects aggregation in crystals

International Nuclear Information System (INIS)

Akylbekov, A.; Akimbekov, E.; Baktybekov, K.; Vasil'eva, I.

2002-01-01

In processes of self-organization, which characterize open systems, the source of ordering is a non-equilibrium. One of the samples of ordering system is radiation-stimulated aggregation of defects in solids. In real work the analysis of criterions of ordering defects structures in solid, which is continuously irradiate at low temperature is presented. The method of cellular automata used in simulation of irradiation. It allowed us to imitate processes of defects formation and recombination. The simulation realized on the surfaces up to 1000x1000 units with initial concentration of defects C n (the power of dose) 0.1-1 %. The number of iterations N (duration of irradiation) mounted to 10 6 cycles. The single centers, which are the sources of formation aggregates, survive in the result of probabilistic nature of formation and recombination genetic pairs of defects and with strictly fixed radius of recombination (the minimum inter anionic distance). For determination the character of same type defects distribution the potential of their interaction depending of defects type and reciprocal distance is calculated. For more detailed study of processes, proceeding in cells with certain sizes of aggregates, the time dependence of potential interaction is constructed. It is shown, that on primary stage the potential is negative, then it increase and approach the saturation in positive area. The minimum of interaction potential corresponds to state of physical chaos in system. Its increasing occurs with formation of same type defects aggregates. Further transition to saturation and 'undulating' character of curves explains by formation and destruction aggregates. The data indicated that - these processes occur simultaneously in cells with different sizes. It allows us to assume that the radiation defects aggregation have a fractal nature

Periodic order and defects in Ni-based inverse opal-like crystals on the mesoscopic and atomic scale

OpenAIRE

Chumakova, A. V.; Valkovskiy, G. A.; Mistonov, A. A.; Dyadkin, V. A.; Grigoryeva, N. A.; Sapoletova, N. A.; Napolskii, K. S.; Eliseev, A. A.; Petukhov, Andrei V.; Grigoriev, S. V.

2014-01-01

The structure of inverse opal crystals based on nickel was probed on the mesoscopic and atomic levels by a set of complementary techniques such as scanning electron microscopy and synchrotron microradian and wide-angle diffraction. The microradian diffraction revealed the mesoscopic-scale face-centered-cubic (fcc) ordering of spherical voids in the inverse opal-like structure with unit cell dimension of 750±10nm. The diffuse scattering data were used to map defects in the fcc structure as a f...

Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Tuomisto, F.; Saarinen, K.; Look, D.C.

2004-01-01

We have used positron annihilation spectroscopy to study the point defects induced by 2 MeV electron irradiation (fluence 6 x 10 17 cm -2 ) in single crystal n-type ZnO samples. The positron lifetime measurements have shown that the zinc vacancies in their doubly negative charge state, which act as dominant compensating centers in the as-grown material, are produced in the irradiation and their contribution to the electrical compensation is important. The lifetime measurements reveal also the presence of competing positron traps with low binding energy and lifetime close to that of the bulk lattice. The analysis of the Doppler broadening of the 511 keV annihilation line indicates that these defects can be identified as neutral oxygen vacancies. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A high-energy double-crystal fixed exit monochromator for the X17 superconducting wiggler beam line at the NSLS

International Nuclear Information System (INIS)

Garrett, R.F.; Dilmanian, F.A.; Oversluizen, T.; Lenhard, A.; Berman, L.E.; Chapman, L.D.; Stoeber, W.

1992-01-01

A high-energy double-crystal x-ray monochromator has been constructed for use on the X-17 beam line at the National Synchrotron Light Source (NSLS). Its design is based on the ''boomerang'' right angle linkage, and features a fixed exit beam, a cooled first crystal, and an energy range of 8--92 keV. The entire mechanism is UHV compatible. The design is described and performance details, obtained in testing at the X17 beam line, are presented

Magnetophotonic crystals

Energy Technology Data Exchange (ETDEWEB)

Inoue, M [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Fujikawa, R [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Baryshev, A [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Khanikaev, A [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Lim, P B [CREST, Japan Science and Technology Agency, Saitama 332-0012, Japan (Japan); Uchida, H [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Aktsipetrov, O [Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992 (Russian Federation); Fedyanin, A [Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992 (Russian Federation); Murzina, T [Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992 (Russian Federation); Granovsky, A [Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992 (Russian Federation)

2006-04-21

When the constitutive materials of photonic crystals (PCs) are magnetic, or even only a defect introduced in PCs is magnetic, the resultant PCs exhibit very unique optical and magneto-optical properties. The strong photon confinement in the vicinity of magnetic defects results in large enhancement in linear and nonlinear magneto-optical responses of the media. Novel functions, such as band Faraday effect, magnetic super-prism effect and non-reciprocal or magnetically controllable photonic band structure, are predicted to occur theoretically. All the unique features of the media arise from the existence of magnetization in media, and hence they are called magnetophotonic crystals providing the spin-dependent nature in PCs. (topical review)

Magnetophotonic crystals

International Nuclear Information System (INIS)

Inoue, M; Fujikawa, R; Baryshev, A; Khanikaev, A; Lim, P B; Uchida, H; Aktsipetrov, O; Fedyanin, A; Murzina, T; Granovsky, A

2006-01-01

When the constitutive materials of photonic crystals (PCs) are magnetic, or even only a defect introduced in PCs is magnetic, the resultant PCs exhibit very unique optical and magneto-optical properties. The strong photon confinement in the vicinity of magnetic defects results in large enhancement in linear and nonlinear magneto-optical responses of the media. Novel functions, such as band Faraday effect, magnetic super-prism effect and non-reciprocal or magnetically controllable photonic band structure, are predicted to occur theoretically. All the unique features of the media arise from the existence of magnetization in media, and hence they are called magnetophotonic crystals providing the spin-dependent nature in PCs. (topical review)

Automatic on-line detection system design research on internal defects of metal materials based on optical fiber F-P sensing technology

Science.gov (United States)

Xia, Liu; Shan, Ning; Chao, Ban; Caoshan, Wang

2016-10-01

Metal materials have been used in aerospace and other industrial fields widely because of its excellent characteristics, so its internal defects detection is very important. Ultrasound technology is used widely in the fields of nondestructive detection because of its excellent characteristic. But the conventional detection instrument for ultrasound, which has shortcomings such as low intelligent level and long development cycles, limits its development. In this paper, the theory of ultrasound detection is analyzed. A computational method of the defects distributional position is given. The non-contact type optical fiber F-P interference cavity structure is designed and the length of origin cavity is given. The real-time on-line ultrasound detecting experiment devices for internal defects of metal materials is established based on the optical fiber F-P sensing system. The virtual instrument of automation ultrasound detection internal defects is developed based on LabVIEW software and the experimental study is carried out. The results show that this system can be used in internal defect real-time on-line locating of engineering structures effectively. This system has higher measurement precision. Relative error is 6.7%. It can be met the requirement of engineering practice. The system is characterized by simple operation, easy realization. The software has a friendly interface, good expansibility, and high intelligent level.

Non-perturbative embedding of local defects in crystalline materials

International Nuclear Information System (INIS)

Cances, Eric; Deleurence, Amelie; Lewin, Mathieu

2008-01-01

We present a new variational model for computing the electronic first-order density matrix of a crystalline material in the presence of a local defect. A natural way to obtain variational discretizations of this model is to expand the difference Q between the density matrix of the defective crystal and the density matrix of the perfect crystal, in a basis of precomputed maximally localized Wannier functions of the reference perfect crystal. This approach can be used within any semi-empirical or density functional theory framework

Vortex-pair nucleation at defects: A mechanism for anomalous temperature dependence in the superconducting screening length

International Nuclear Information System (INIS)

Hebard, A.F.; Fiory, A.T.; Siegal, M.P.; Phillips, J.M.; Haddon, R.C.

1991-01-01

Low-field ac screening measurements on YBa 2 Cu 3 O 7-δ films and (BEDT-TTF) 2 Cu(SCN) 2 crystals [where BEDT-TTF is bis(ethylenedithio)tetrathiafulvalene], both thought to contain a high density of defects, reveal a diminution of screening and a common extrinsic temperature dependence of the screening length λ. Vortex-core pinning at the defects is shown to give a low-temperature T 2 power-law temperature dependence to λ that, in contrast to the exponential behavior expected from s-wave pairing, can be mistaken as evidence for lines or nodes of the energy gap on the Fermi surface

On kinetics of paramagnetic radiation defects accumulation in beryllium ceramics; O kinetike nakopleniya paramagnitnykh radiatsionnykh defektov v berillievykh keramikakh

Energy Technology Data Exchange (ETDEWEB)

Polyakov, A I; Ryabikin, Yu A; Zashkvara, O V; Bitenbaev, M I; Petykhov, Yu V [Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan); Inst. Atomnoj Ehnergii, Kurchatov (Kazakhstan)

1999-07-01

Results of paramagnetic radiation defects concentration dependence study in beryllium ceramics from gamma-irradiation dose ({sup 60}Co) within interval 0-100 Mrem are cited. Obtained dose dependence has form of accumulation curve with saturation typical of for majority of solids (crystals, different polymers, organic substances and others) , in which under irradiation occur not only formation of paramagnetic radiation defects, but its destruction due to recombination and interaction with radiation fields. Analysis of accumulation curve by the method of distant asymptotics allows to determine that observed in gamma-irradiated beryllium ceramics double line of electron spin resonance is forming of two types of paramagnetic radiation defects. It was defined, that sum paramagnetic characteristics of beryllium ceramics within 1-100 Mrad gamma- irradiation dose field change insignificantly and define from first type of paramagnetic radiation defects.

High-purity germanium crystal growing

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1982-10-01

The germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 10 10 cm - 3 and be essentially free of charge trapping defects. Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions. The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers

Experimental and theoretical investigation of the rocking curves measured for Mo K α X-ray characteristic lines in the double-crystal nondispersive scheme

Science.gov (United States)

Marchenkov, N. V.; Chukhovskii, F. N.; Blagov, A. E.

2015-03-01

The rocking curves (RCs) for Mo K α1 h Mo K α2 characteristic X-ray lines have been experimentally and theoretically studied in the nondispersive scheme of an X-ray double-crystal TPC-K diffractometer. The results of measurements and theoretical calculations of double-crystal RCs for characteristic X-rays from tubes with a molybdenum anode and different widths of slits show that a decrease in the slit width leads to an increase in the relative contribution of the Mo K α2-line RC in comparison with the intensity of the tails of the Mo K α1-line RC. It is shown that the second peak of the Mo K α2 line becomes increasingly pronounced in the tail of the Mo K α1-line RC with a decrease in the slit width. Two plane-parallel Si plates (input faces {110}, diffraction vector h ) were used as a monochromator crystal and a sample. The results of measuring double-crystal RCs are in good agreement with theoretical calculations.

The Effect of Radiation "Memory" in Alkali-Halide Crystals

Science.gov (United States)

Korovkin, M. V.; Sal'nikov, V. N.

2017-01-01

The exposure of the alkali-halide crystals to ionizing radiation leads to the destruction of their structure, the emergence of radiation defects, and the formation of the electron and hole color centers. Destruction of the color centers upon heating is accompanied by the crystal bleaching, luminescence, and radio-frequency electromagnetic emission (REME). After complete thermal bleaching of the crystal, radiation defects are not completely annealed, as the electrons and holes released from the color centers by heating leave charged and locally uncompensated defects. Clusters of these "pre centers" lead to electric microheterogeneity of the crystal, the formation of a quasi-electret state, and the emergence of micro-discharges accompanied by radio emission. The generation of REME associated with residual defectiveness, is a manifestation of the effect of radiation "memory" in dielectrics.

Logistic planning and control of reworking perishable production defectives

NARCIS (Netherlands)

R.H. Teunter (Ruud); S.D.P. Flapper

2001-01-01

textabstractWe consider a production line that is dedicated to a single product. Produced lots may be non-defective, reworkable defective, or non-reworkable defective. The production line switches between production and rework. After producing a fixed number (N) of lots, all reworkable defective

Radiation induced color in topaz crystals

International Nuclear Information System (INIS)

Castagnet, A.C.; Rocca, H.C.C.; Rostilato, M.E.C.M.

1989-08-01

The presence of defects and impurities in the crystal lattice alters the eletric field distribution within the crystal, allowing the electrons to occupy energy levels in the forbbiden band. Ionizing radiation supply the required energy to permit the electrons originaly bound to lattice atoms, to occupy effectively those intermediate levels, forming color centers. Dependig upon the nature and energy of the radiation, it is possible to produce defects in regions of the crystal, generating color centers. Based on these premises, a technique to induce color in originally colorless topaz, by using the IEA-R1 nuclear reactor, was developed at Engineering and Industrial Application Department (TE). Samples were irradiated inside iron capsules coated with cadmium foils. The iron, and principaly the cadmium, absorb the thermal neutrons that could activate crystal impurities generating long-lived radioisotopes. The epithermal neutrons that overpass the iron and cadmium barriers interact with the crystal atoms, causing lattice defects which give rise to color center, by subsequent ionization processes. The procedure used at TE induces permanent blue color, in natural colorless topaz. (author) [pt

Mesoscale martensitic transformation in single crystals of topological defects

Energy Technology Data Exchange (ETDEWEB)

Li, Xiao; Martínez-González, José A.; Hernández-Ortiz, Juan P.; Ramírez-Hernández, Abelardo; Zhou, Ye; Sadati, Monirosadat; Zhang, Rui; Nealey, Paul F.; de Pablo, Juan J.

2017-09-05

Liquid crystal blue phases (BPs) are highly ordered at two levels. Molecules exhibit orientational order at nanometer length scales, while chirality leads to ordered arrays of doubletwisted cylinders over micrometer scales. Past studies of polycrystalline BPs were challenged by grain boundaries between randomly oriented crystalline nanodomains. Here, the nucleation of BPs is controlled with considerable precision by relying on chemically nano-patterned surfaces, leading to macroscopic single-crystal BP specimens where the dynamics of meso-crystal formation can be directly observed. Theory and experiments show that transitions between two BPs having a different network structure proceed through local re-organization of the crystalline array, without diffusion of the double twisted cylinders. In solid crystals, martensitic transformations between crystal structures involve the concerted motion of a few atoms, without diffusion. The transformation between BPs, where crystal features arise in the sub-micron regime, is found to be martensitic in nature, with the diffusion-less feature associated to the collective behavior of the double twist cylinders. Single-crystal BPs are shown to offer fertile grounds for the study of directed crystal-nucleation and the controlled growth of soft matter.

Magnetic and optical holonomic manipulation of colloids, structures and topological defects in liquid crystals for characterization of mesoscale self-assembly and dynamics

Science.gov (United States)

Varney, Michael C. M.

Colloidal systems find important applications ranging from fabrication of photonic crystals to direct probing of phenomena encountered in atomic crystals and glasses; topics of great interest for physicists exploring a broad range of scientific, industrial and biomedical fields. The ability to accurately control particles of mesoscale size in various liquid host media is usually accomplished through optical trapping methods, which suffer limitations intrinsic to trap laser intensity and force generation. Other limitations are due to colloid properties, such as optical absorptivity, and host properties, such as viscosity, opacity and structure. Therefore, alternative and/or novel methods of colloidal manipulation are of utmost importance in order to advance the state of the art in technical applications and fundamental science. In this thesis, I demonstrate a magnetic-optical holonomic control system to manipulate magnetic and optical colloids in liquid crystals and show that the elastic structure inherent to nematic and cholesteric liquid crystals may be used to assist in tweezing of particles in a manner impossible in other media. Furthermore, I demonstrate the utility of this manipulation in characterizing the structure and microrheology of liquid crystals, and elucidating the energetics and dynamics of colloids interacting with these structures. I also demonstrate the utility of liquid crystal systems as a table top model system to probe topological defects in a manner that may lead to insights into topologically related phenomena in other fields, such as early universe cosmology, sub-atomic and high energy systems, or Skrymionic structures. I explore the interaction of colloid surface anchoring with the structure inherent in cholesteric liquid crystals, and how this affects the periodic dynamics and localization metastability of spherical colloids undergoing a "falling" motion within the sample. These so called "metastable states" cause colloidal dynamics to

Infrared computations of defect Schur indices

Energy Technology Data Exchange (ETDEWEB)

Córdova, Clay [School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr., Princeton, NJ (United States); Gaiotto, Davide [Perimeter Institute for Theoretical Physics,31 Caroline St., Waterloo, Ontario, N2L 2Y5 (Canada); Shao, Shu-Heng [Jefferson Physical Laboratory, Harvard University,17 Oxford St., Cambridge, MA (United States); School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr., Princeton, NJ (United States)

2016-11-18

We conjecture a formula for the Schur index of four-dimensional N=2 theories in the presence of boundary conditions and/or line defects, in terms of the low-energy effective Seiberg-Witten description of the system together with massive BPS excitations. We test our proposal in a variety of examples for SU(2) gauge theories, either conformal or asymptotically free. We use the conjecture to compute these defect-enriched Schur indices for theories which lack a Lagrangian description, such as Argyres-Douglas theories. We demonstrate in various examples that line defect indices can be expressed as sums of characters of the associated two-dimensional chiral algebra and that for Argyres-Douglas theories the line defect OPE reduces in the index to the Verlinde algebra.

High-Q microwave resonators with a photonic crystal structure

International Nuclear Information System (INIS)

Schuster, M.

2001-08-01

The localisation of electromagnetic energy at a defect in a photonic crystal is similar to a well known effect employed to construct high-Q microwave resonators: In a whispering gallery (WHG-) mode resonator the high Q-factor is achieved by localisation of the electromagnetic field energy by total reflection inside a disk made of dielectric material. The topic of this work is to demonstrate, that WHG-like modes can exist in an air defect in a photonic crystal that extends over several lattice periods; and that a high-Q microwave resonator can be made, utilizing these resonant modes. In numerical simulations, the transmission properties of a photonic crystal structure with hexagonal lattice symmetry have been investigated with a transfer-matrix-method. The eigenmodes of a defect structure in a photonic crystal have been calculated with a quasi-3d finite element integration technique. Experimental results confirm the simulated transmission properties and show the existence of modes inside the band gap, when a defect is introduced in the crystal. Resonator measurements show that a microwave resonator can be operated with those defect modes. It was found out that the main losses of the resonator were caused by bad microwave properties of the used dielectric material and by metal losses on the top and bottom resonator walls. Furthermore, it turned out that the detection of the photonic crystal defect mode was difficult because of a lack of simulation possibilities and high housing mode density in the resonator. (orig.)

Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies

Science.gov (United States)

Seo, Hosung; Ma, He; Govoni, Marco; Galli, Giulia

2017-12-01

The development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion-vacancy pairs are promising qubit candidates in two binary crystals: 4 H -SiC and w -AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. The defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.

Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Tuomisto, F.; Saarinen, K. [Laboratory of Physics, Helsinki University of Technology (Finland); Look, D.C. [Semiconductor Research Center, Wright State University, Dayton, Ohio (United States)

2004-08-01

We have used positron annihilation spectroscopy to study the point defects induced by 2 MeV electron irradiation (fluence 6 x 10{sup 17} cm{sup -2}) in single crystal n-type ZnO samples. The positron lifetime measurements have shown that the zinc vacancies in their doubly negative charge state, which act as dominant compensating centers in the as-grown material, are produced in the irradiation and their contribution to the electrical compensation is important. The lifetime measurements reveal also the presence of competing positron traps with low binding energy and lifetime close to that of the bulk lattice. The analysis of the Doppler broadening of the 511 keV annihilation line indicates that these defects can be identified as neutral oxygen vacancies. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Correlation Between the Microstructural Defects and Residual Stress in a Single Crystal Nickel-Based Superalloy During Different Creep Stages

Science.gov (United States)

Mo, Fangjie; Wu, Erdong; Zhang, Changsheng; Wang, Hong; Zhong, Zhengye; Zhang, Jian; Chen, Bo; Hofmann, Michael; Gan, Weimin; Sun, Guangai

2018-03-01

The present work attempts to reveal the correlation between the microstructural defects and residual stress in the single crystal nickel-based superalloy, both of which play the significant role on properties and performance. Neutron diffraction was employed to investigate the microstructural defects and residual stresses in a single crystal (SC) nickel-based superalloy, which was subjected to creeping under 220 MPa and 1000 °C for different times. The measured superlattice and fundamental lattice reflections confirm that the mismatch and tetragonal distortions with c/a > 1 exist in the SC superalloy. At the initially unstrained state, there exists the angular distortion between γ and γ' phases with small triaxial compressive stresses, ensuring the structural stability of the superalloy. After creeping, the tetragonal distortion for the γ phase is larger than that for the γ' phase. With increasing the creeping time, the mismatch between γ and γ' phases increases to the maximum, then decreases gradually and finally remains unchanged. The macroscopic residual stress shows a similar behavior with the mismatch, indicating the correlation between them. Based on the model of shear and dislocations, the evolution of microstructural defects and residual stress are reasonably explained. The effect of shear is dominant at the primary creep stage, which greatly enlarges the mismatch and the residual stress. The dislocations weaken the effect of shear for the further creep stage, resulting in the decrease of the mismatch and relaxation of the residual stress. Those findings add some helpful understanding into the microstructure-performance relationship in the SC nickel-based superalloy, which might provide the insight to materials design and applications.

Heterogeneous activation of H_2O_2 by defect-engineered TiO_2_−_x single crystals for refractory pollutants degradation: A Fenton-like mechanism

International Nuclear Information System (INIS)

Zhang, Ai-Yong; Lin, Tan; He, Yuan-Yi; Mou, Yu-Xuan

2016-01-01

Highlights: • Facet- and defect-engineered TiO_2 is proposed for water treatment as Fenton-like catalyst. • The =Ti(III) center serves as lattice shuttle for electron transfer in H_2O_2 activation. • TiO_2 is promising due to low cost, high abundance, no toxicity and stable performance. - Abstract: The heterogeneous catalyst plays a key role in Fenton-like reaction for advanced oxidation of refractory pollutants in water treatment. Titanium dioxide (TiO_2) is a typical semiconductor with high industrial importance due to its earth abundance, low cost and no toxicity. In this work, it is found that TiO_2 can heterogeneously activate hydrogen peroxide (H_2O_2, E° = 1.78 eV), a common chemical oxidant, to efficiently generate highly-powerful hydroxyl radical, ·OH (E"0 = 2.80 eV), for advanced water treatment, when its crystal shape, exposed facet and oxygen-stoichiometry are finely tuned. The defect-engineered TiO_2 single crystals exposed by high-energy {0 0 1} facets exhibited an excellent Fenton-like activity and stability for degrading typical refractory organic pollutants such as methyl orange and p-nitrophenol. Its defect-centered Fenton-like superiority is mainly attributed to the crystal oxygen-vacancy, single-crystalline structure and exposed polar {0 0 1} facet. Our findings could provide new chance to utilize TiO_2 for Fenton-like technology, and develop novel heterogeneous catalyst for advanced water treatment.

Formation and evolution of point defects created in alkali halogen compounds irradiated by heavy ions; Formation et evolution des defauts ponctuels crees dans certains halogenures alcalins irradies par des ions lourds

Energy Technology Data Exchange (ETDEWEB)

Hourdequin, E [Nantes Univ., 44 (France)

1993-07-16

The goal of this study was to achieve a better understanding of the heavy-ion material interaction. Alkali halogen crystals were chosen since the color centers produced by heavy ions can be distinguished easier from those generated by X rays. Measurements on KI irradiated at low temperature showed that the usual process of non radiative de-excitation of self-captured exciton is not prevailing. As the main objective of this work was the exact determination of the defects created by accelerated heavy ions, an important effort was dedicated to the spectrum deconvolution. Due to the high quality of the obtained spectra the V band analyse was possible. The defect stability was found to have the same nature in all the cubical alkali halogens and depend essentially on the crystal type. The defect evolution after irradiation is related to the diffusion coefficients corresponding to each mobile species and to the crystal lattice in which they move. Based on measurements made at different temperatures a simple modeling of the recombination kinetics was proposed. This effect was found to be specific to irradiation by heavy ions. It is difficult to determine the initial processes from the fossil defects, so, the defect history must be known as the described investigation methods do not permit to establish the transient aspect of defect creation. The important role of impurities should be stressed as the third intruder in the ion/crystal configuration; it can modify significantly the final state of the irradiated crystal, as it was found in KI, for instance. The open problems underlined in this study will probably be solved by using the atomic force microscopy and diffraction or on-line Raman measurements in ISOC chamber to avoid the passage to ambient conditions of the crystals irradiated at low temperatures 60 refs.

Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on (\\bar{2}01) β-Ga2O3

Science.gov (United States)

Kasu, Makoto; Oshima, Takayoshi; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu

2017-09-01

A pixel array of vertical Schottky-barrier diodes (SBDs) was fabricated and measured on the surface of a (\\bar{2}01) β-Ga2O3 single crystal. Subsequently, etch pits and patterns were observed on the same surface. Three types of etch pits were discovered: (1) a line-shaped etch pattern originating from a void and extending toward the [010] direction, (2) an arrow-shaped etch pit whose arrow’s head faces toward the [102] direction and, (3) a gourd-shaped etch pit whose point head faces toward the [102] direction. Their average densities were estimated to be 5 × 102, 7 × 104, and 9 × 104 cm-2, respectively. We confirmed no clear relationship between the leakage current in SBDs and these crystalline defects. Such results are obtained because threading dislocations run mainly in the [010] growth direction and do not go through the (\\bar{2}01) sample plate.

Interaction of dislocations and point defects in high-purity molybdenum single crystals

International Nuclear Information System (INIS)

Polotskij, I.G.; Benieva, T.Ya.; Golub, T.V.

1975-01-01

The effect of the interstitial atoms distribution on dislocations mobility in extra pure molybdenum is studied. The amplitude relationships of the internal fraction were measured, which makes it possible to record energy dissipation associated with dislocation mobility in conditions of microdeformation. It was established that single crystals of extra pure molybdenum subjected to minor plastic deformation (1%) are characterized by high internal friction, which depends on the degree of crystall purification with regard to interstitial admixtures. Annealing at temperatures of 200 - 500 deg reduces the total level of damping and causes appearance of a sharp amplitude relationship. In this case, the reduction of damping is associated with diffusion of the interstitial atoms towards the dislocation line and its fixation. The irreversible nature of the internal friction amplitude relationship after development of high deformation amplitudes is explained by micro-plastic deformation processes. The amplitude. of deformation, after which the internal friction becomes irreversible, increases with the increase of the annealing temperature. The damping-deformation hysteresis reaches its maximum value after heat treatment at middle tempetatures. With the increase of the annealing temperature, the hysteresis becomes less. Thermal activation causes displacement of the critical amplitude corresponding to production of the delta-epsilon hysteresis to the region of lower values. Using the Pagen, Pare and Goben theory the amplitude-dependent internal friction data have been employed for calculation of the activation volume values which characterize the initial stages of plastic flow in extra pure single crystals of molybdenum

Simultaneous sensing of light and sound velocities of fluids in a two-dimensional phoXonic crystal with defects

Energy Technology Data Exchange (ETDEWEB)

Amoudache, Samira [Institut d' Electronique, de Microélectronique et de Nanotechnologie, Université de Lille 1, 59655 Villeneuve d' Ascq (France); Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri, B.P. 17 RP, 15000 Tizi-Ouzou (Algeria); Pennec, Yan, E-mail: yan.pennec@univ-lille1.fr; Djafari Rouhani, Bahram [Institut d' Electronique, de Microélectronique et de Nanotechnologie, Université de Lille 1, 59655 Villeneuve d' Ascq (France); Khater, Antoine [Institut des Molécules et Matériaux du Mans UMR 6283 CNRS, Université du Maine, 72085 Le Mans (France); Lucklum, Ralf [Institute of Micro and Sensor Systems (IMOS), Otto-von-Guericke-University, Magdeburg (Germany); Tigrine, Rachid [Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri, B.P. 17 RP, 15000 Tizi-Ouzou (Algeria)

2014-04-07

We theoretically investigate the potentiality of dual phononic-photonic (the so-called phoxonic) crystals for liquid sensing applications. We study the transmission through a two-dimensional (2D) crystal made of infinite cylindrical holes in a silicon substrate, where one row of holes oriented perpendicular to the propagation direction is filled with a liquid. The infiltrated holes may have a different radius than the regular holes. We show, in the defect structure, the existence of well-defined features (peaks or dips) in the transmission spectra of acoustic and optical waves and estimate their sensitivity to the sound and light velocity of the analyte. Some of the geometrical requirements behave in opposite directions when searching for an efficient sensing of either sound or light velocities. Hence, a compromise in the choice of the parameters may become necessary in making the phoxonic sensor.

Zero-phonon lines and electron–phonon interaction characteristics of near-surface layer radiation color centers in lithium fluoride

Energy Technology Data Exchange (ETDEWEB)

Voitovich, A.P., E-mail: voitovich@ifanbel.bas-net.by [Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk (Belarus); Kalinov, V.S. [Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk (Belarus); Mudryi, A.V. [Scientific-Practical Materials Research Center, National Academy of Sciences of Belarus, 19 Brovka Street, 220072 Minsk (Belarus); Pavlovskii, V.N.; Runets, L.P.; Svitsiankou, I.E. [Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk (Belarus)

2016-04-15

Zero-phonon lines have been registered in photoluminescence spectra of near-surface layer radiation color centers in lithium fluoride nanocrystals. They have been assigned to transitions of the definite types centers. The frequencies of phonons participating in the transitions of the different type centers located both in the near-surface layer and in the crystal bulk have been measured and compared. The Huang-Rhys parameters for the transitions of these centers have been determined. It has been found that the Huang-Rhys parameters for the studied transitions in the near-surface layer centers of the certain composition are less than for those in the crystal bulk centers of the same composition. This feature is connected with the difference of the electron density distribution in defects. Temperature dependences of the zero-phonon lines widths and shifts have been measured. It has been determined that both widths and shifts grow faster with the increase of a temperature for the defects transitions with the lesser Huang-Rhys parameters. Phonons lifetimes are estimated from the experimental data.

Zero-phonon lines and electron–phonon interaction characteristics of near-surface layer radiation color centers in lithium fluoride

International Nuclear Information System (INIS)

Voitovich, A.P.; Kalinov, V.S.; Mudryi, A.V.; Pavlovskii, V.N.; Runets, L.P.; Svitsiankou, I.E.

2016-01-01

Zero-phonon lines have been registered in photoluminescence spectra of near-surface layer radiation color centers in lithium fluoride nanocrystals. They have been assigned to transitions of the definite types centers. The frequencies of phonons participating in the transitions of the different type centers located both in the near-surface layer and in the crystal bulk have been measured and compared. The Huang-Rhys parameters for the transitions of these centers have been determined. It has been found that the Huang-Rhys parameters for the studied transitions in the near-surface layer centers of the certain composition are less than for those in the crystal bulk centers of the same composition. This feature is connected with the difference of the electron density distribution in defects. Temperature dependences of the zero-phonon lines widths and shifts have been measured. It has been determined that both widths and shifts grow faster with the increase of a temperature for the defects transitions with the lesser Huang-Rhys parameters. Phonons lifetimes are estimated from the experimental data.

Defect types and room temperature ferromagnetism in N-doped rutile TiO2 single crystals

Science.gov (United States)

Qin, Xiu-Bo; Li, Dong-Xiang; Li, Rui-Qin; Zhang, Peng; Li, Yu-Xiao; Wang, Bao-Yi

2014-06-01

The magnetic properties and defect types of virgin and N-doped TiO2 single crystals are probed by superconducting quantum interference device (SQUID), X-ray photoelectron spectroscopy (XPS), and positron annihilation analysis (PAS). Upon N doping, a twofold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancy, rather to unpaired 3d electrons in Ti3+, arising from titanium vacancies and the replacement of O with N atoms in the rutile structure. The production of titanium vacancies can enhance the room temperature ferromagnetism (RTFM), and substitution of O with N is the onset of ferromagnetism by inducing relatively strong ferromagnetic ordering.

Defect trap model of gas behaviour in UO2 fuel during irradiation

International Nuclear Information System (INIS)

Szuta, A.

2003-01-01

Fission gas behaviour is one of the central concern in the fuel design, performance and hypothetical accident analysis. The report 'Defect trap model of gas behaviour in UO 2 fuel during irradiation' is the worldwide literature review of problems studied, experimental results and solutions proposed in related topics. Some of them were described in details in the report chapters. They are: anomalies in the experimental results; fission gas retention in the UO 2 fuel; microstructure of the UO 2 fuel after irradiation; fission gas release models; defect trap model of fission gas behaviour; fission gas release from UO 2 single crystal during low temperature irradiation in terms of a defect trap model; analysis of dynamic release of fission gases from single crystal UO 2 during low temperature irradiation in terms of defect trap model; behaviour of fission gas products in single crystal UO 2 during intermediate temperature irradiation in terms of a defect trap model; modification of re-crystallization temperature of UO 2 in function of burnup and its impact on fission gas release; apparent diffusion coefficient; formation of nanostructures in UO 2 fuel at high burnup; applications of the defect trap model to the gas leaking fuel elements number assessment in the nuclear power station (VVER-PWR)

Phonons, defects and optical damage in crystalline acetanilide

Science.gov (United States)

Kosic, Thomas J.; Hill, Jeffrey R.; Dlott, Dana D.

1986-04-01

Intense picosecond pulses cause accumulated optical damage in acetanilide crystals at low temperature. Catastrophic damage to the irradiated volume occurs after an incubation period where defects accumulate. The optical damage is monitored with subanosecond time resolution. The generation of defects is studied with damage-detected picosecond spectroscopy. The accumulation of defects is studied by time-resolved coherent Raman scattering, which is used to measure optical phonon scattering from the accumulating defects.

Epitaxial Ge-crystal arrays for X-ray detection

International Nuclear Information System (INIS)

Kreiliger, T; Falub, C V; Müller, E; Känel, H von; Isa, F; Isella, G; Chrastina, D; Bergamaschini, R; Marzegalli, A; Miglio, L; Kaufmann, R; Niedermann, P; Neels, A; Dommann, A; Meduňa, M

2014-01-01

Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. The electrical characteristics of individual Ge/Si heterojunction diodes are obtained from in-situ measurements inside a scanning electron microscope. The fabrication of monolithically integrated detectors is shown to be compatible with Si-CMOS processing

Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

Science.gov (United States)

Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

2011-10-10

We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

On-line mass spectrometry system for measurements at single-crystal electrodes in hanging meniscus configuration

NARCIS (Netherlands)

Wonders, A.H.; Housmans, T.H.M.; Rosca, V.; Koper, M.T.M.

2006-01-01

We present the construction and some first applications of an On-line electrochemical mass spectrometry system for detecting volatile products formed during electrochemical reactions at a single-crystal electrode in hanging meniscus configuration. The system is based on a small inlet tip made of

Peculiarities of radiation defect formation and annealing in n-Si due to their interaction with each other and defect clusters

International Nuclear Information System (INIS)

Lugakov, P.F.; Lukyanitsa, V.V.

1984-01-01

Rearrangement processes proceeding during annealing (T/sub a/ = 50 to 500 0 C) of radiation defects in 60 Co γ-irradiated (T/sub irr/ 0 C) n-Si crystals (rho = 100 to 600 Ωcm) grown by the vacuum float-zone technique are studied. The temperature dependences of the Hall coefficient are measured. The results obtained are interpreted taking into account the interaction during annealing of vacancy-type defects (E-centres, divacancies) with each other and interstitial radiation defects (C/sub i/-C/sub s/ complexes, interstitial carbon C/sub i/). Phosphorus-two vacancies complexes, stable to T/sub a/ >= 500 0 C, are shown to be formed as a result of rearrangements and interaction of E-centres between themselves. The character of interaction of vacancy defects with interstitial ones is found to change significantly in the presence of defect clusters in the bulk of the crystal which are formed under heat treatment (T = 800 0 C, two hours) of the samples preliminary irradiated with fast neutrons (flux PHI/sub n/ = 1x10 14 to 1x10 16 cm -2 ). The peculiarities of radiation defects annealing observed in this case are explained taking into account the influence of defect clusters on the migration processes of mobile defects. Nature of radiation defects being formed at various stages of annealing is discussed. (author)

Effect of structural defects on the magnetic properties of the EuBaCo1.90O5.36 single crystal

Science.gov (United States)

Arbuzova, T. I.; Naumov, S. V.; Telegin, S. V.

2018-01-01

The effect of structural defects in cobalt and oxygen sublattices with the constant average oxidation level 3+ of all cobalt ions on the magnetic properties of the EuBaCo1.90O5.36 single crystal has been studied. The magnetic properties of the single crystal and the polycrystalline sample of the corresponding composition are compared in the range T = 200-650 K. The results show that the cobalt-deficient EuBaCo2- x O5.5-δ samples demonstrate a three-dimensional XY ferromagnetic ordering of magnetic sublattices. The values of the effective magnetic moment at T > 480 K indicate the existence of the IS and HS states of Co3+ ions. The large difference of values of μeff of the EuBaCo1.90O5.36 single crystal and polycrystal can be due to that the magnetic ion spins lie in plane ab. The magnetic field directed along plane ab substantially influences the magnetic ordering at T < 300 K.

Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

2006-05-28

Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

Defect free single crystal thin layer

KAUST Repository

Elafandy, Rami Tarek Mahmoud

2016-01-28

A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

Defect free single crystal thin layer

KAUST Repository

Elafandy, Rami Tarek Mahmoud; Ooi, Boon S.

2016-01-01

A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

Mobility of point defects induced by subthreshold collisions

International Nuclear Information System (INIS)

Tenenbaum, A.; Nguyen Van Doan

1976-01-01

The effect of thermal vibrations on atomic collision focusing was studied with the view to demonstrate that such collisions may induce point defect migration through the crystal. The persistence of the phenomenon of focused atomic collisions in a crystal at thermal equilibrium was studied, using a computer simulation by the Molecular Dynamics Technique. In the temperature range (0 to 500K) matter and momentum transfers in c.f.c. crystals proceed mainly by focused collisions along and directions. Their contribution to the induced migration of radiation defects was determined from the threshold energy of every primary able to be involved in the process. As an example, the quantitative model is applied to electron irradiation along the crystallographic directions [fr

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

Energy Technology Data Exchange (ETDEWEB)

Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

2012-12-17

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Atomic structure of defects in GaN:Mg grown with Ga polarity

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

2003-01-01

Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

Surface-defect induced modifications in the optical properties of α-MnO_2 nanorods

International Nuclear Information System (INIS)

John, Reenu Elizabeth; Chandran, Anoop; Thomas, Marykutty; Jose, Joshy; George, K.C.

2016-01-01

Graphical abstract: - Highlights: • Alpha-MnO_2 nanorods are prepared by chemical method. • Difference in surface defect density is achieved. • Characterized using XRD, Rietveld, XPS, EDS, HR-TEM, BET, UV–vis absorption spectroscopy and PL spectroscopy. • Explains the bandstructure modification due to Jahn–Teller distortions using crystal field theory. • Modification in the intensity of optical emissions related to defect levels validates the concept of surface defect induced tuning of optical properties. - Abstract: The science of defect engineering via surface tuning opens a new route to modify the inherent properties of nanomaterials for advanced functional and practical applications. In this work, two independent synthesis methods (hydrothermal and co-precipitation) are adopted to fabricate α-MnO_2 nanorods with different defect structures so as to understand the effect of surface modifications on their optical properties. The crystal structure and morphology of samples are investigated with the aid of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Atomic composition calculated from energy dispersive spectroscopy (EDS) confirms non-stoichiometry of the samples. The surface properties and chemical environment are thoroughly studied using X-ray photoelectron spectroscopy (XPS) and Brunauer–Emmett–Teller (BET) analysis. Bond angle variance and bond valence sum are determined to validate distortions in the basic MnO_6 octahedron. The surface studies indicate that the concentration of Jahn–Teller manganese (III) (Mn"3"+) ion in the samples differ from each other which results in their distinct properties. Band structure modifications due to Jahn–Teller distortion are examined with the aid of ultraviolet–visible (UV) reflectance and photoluminescence (PL) studies. The dual peaks obtained in derivative spectrum conflict the current concept on the bandgap energy of MnO_2. These studies suggest that

Crystal-defect-induced facet-dependent electrocatalytic activity of 3D gold nanoflowers for the selective nanomolar detection of ascorbic acid.

Science.gov (United States)

De, Sandip Kumar; Mondal, Subrata; Sen, Pintu; Pal, Uttam; Pathak, Biswarup; Rawat, Kuber Singh; Bardhan, Munmun; Bhattacharya, Maireyee; Satpati, Biswarup; De, Amitabha; Senapati, Dulal

2018-06-14

Understanding and exploring the decisive factors responsible for superlative catalytic efficiency is necessary to formulate active electrode materials for improved electrocatalysis and high-throughput sensing. This research demonstrates the ability of bud-shaped gold nanoflowers (AuNFs), intermediates in the bud-to-blossom gold nanoflower synthesis, to offer remarkable electrocatalytic efficiency in the oxidation of ascorbic acid (AA) at nanomolar concentrations. Multicomponent sensing in a single potential sweep is measured using differential pulse voltammetry while the kinetic parameters are estimated using electrochemical impedance spectroscopy. The outstanding catalytic activity of bud-structured AuNF [iAuNFp(Bud)/iGCp ≅ 100] compared with other bud-to-blossom intermediate nanostructures is explained by studying their structural transitions, charge distributions, crystalline patterns, and intrinsic irregularities/defects. Detailed microscopic analysis shows that density of crystal defects, such as edges, terraces, steps, ledges, kinks, and dislocation, plays a major role in producing the high catalytic efficiency. An associated ab initio simulation provides necessary support for the projected role of different crystal facets as selective catalytic sites. Density functional theory corroborates the appearance of inter- and intra-molecular hydrogen bonding within AA molecules to control the resultant fingerprint peak potentials at variable concentrations. Bud-structured AuNF facilitates AA detection at nanomolar levels in a multicomponent pathological sample.

Effect of [Li]/[Nb] ratio on composition and defect structure of Zr:Yb:Tm:LiNbO3 crystals

Science.gov (United States)

Liu, Chunrui; Dai, Li; Wang, Luping; Shao, Yu; Yan, Zhehua; Xu, Yuheng

2018-04-01

Zr:Yb:Tm:LiNbO3 crystals with various [Li]/[Nb] ratios (0.946, 1.05, 1.20 and 1.38) were grown by the Czochralski technique. Distribution coefficients of Zr4+, Yb3+ and Tm3+ ions were analyzed by the inductively coupled plasma-atomic emission spectrometer (ICP-AES). The influence of [Li]/[Nb] ratio on the composition and defect structure of Zr:Yb:Tm:LiNbO3 crystals was investigated by X-ray diffraction and IR transmission spectrum. The results show that as the [Li]/[Nb] ratio increases in the melt, the distribution coefficients of Yb3+ and Tm3+ ions both increase while that of Zr4+ ion deceases. When the [Li]/[Nb] ratio increases to 1.20 in the melt, Zr:Yb:Tm:LiNbO3 crystal is nearly stoichiometric. In addition, when the [Li]/[Nb] ratio reaches up to 1.38, NbLi4+ are completely replaced and Li+ starts to impel the Zr4+, Yb3+ and Tm3+ into the normal Li sites.

Polydispersity-driven topological defects as order-restoring excitations.

Science.gov (United States)

Yao, Zhenwei; Olvera de la Cruz, Monica

2014-04-08

The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

International conference on defects in insulating crystals

International Nuclear Information System (INIS)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states

Crystal structure of tveitite-(Y): Fractionation of rare-earth elements between positions and the variety of defects

International Nuclear Information System (INIS)

Yakubovich, O. V.; Massa, W.; Pekov, I. V.; Gavrilenko, P. G.

2007-01-01

The crystal structure of the mineral tveitite-(Y) (Y 0.883 Na 0.106 ) (Ca 0.841 LREE 0.159 )(Ca 0.716 Na 0.204 HREE 0.080 )(Ca 0.092 Na 0.074 )F 6.952 from amazonite pegmatites of Rov-Gora Mountain (Keivy, Kola Peninsula) is determined using X-ray diffraction (Stoe IPDS diffractometer, λMoK α , graphite monochromator, 2θ max = 63.5 o , R = 0.051 for 1542 reflections). The main crystal data are as follows: a = 17.020(2) A, c = 9.679(2) A, V = 2428.2(4) A 3 , space group R3-bar, Z = 18, and ρ calcd = 4.00 g/cm 3 . The idealized structural formula of the mineral is represented as (Y,Na) 6 (Ca,LREE) 6 (Ca,Na,HREE) 6 (Ca,Na)F 42 (Z = 3). The defect structure of the mineral manifests itself in a mixed occupation of all four independent cation positions and in a randomly disordered distribution of fluorine atoms over the majority of anion positions. It is shown that the crystal structure of tveitite-(Y) fulfills the function of an 'Eratosthenes sieve' for yttrium cations and two groups of lanthanide cations, so that these cations are distributed over three different positions.

International conference on defects in insulating crystals

Energy Technology Data Exchange (ETDEWEB)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

Liquid Crystal photonic Bandgap Fiber Devices

DEFF Research Database (Denmark)

Wei, Lei

In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

Science.gov (United States)

Vydyanath, H. R.

1981-01-01

Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

Extraordinary wavelength reduction in terahertz graphene-cladded photonic crystal slabs

Science.gov (United States)

Williamson, Ian A. D.; Mousavi, S. Hossein; Wang, Zheng

2016-01-01

Photonic crystal slabs have been widely used in nanophotonics for light confinement, dispersion engineering, nonlinearity enhancement, and other unusual effects arising from their structural periodicity. Sub-micron device sizes and mode volumes are routine for silicon-based photonic crystal slabs, however spectrally they are limited to operate in the near infrared. Here, we show that two single-layer graphene sheets allow silicon photonic crystal slabs with submicron periodicity to operate in the terahertz regime, with an extreme 100× wavelength reduction from graphene’s large kinetic inductance. The atomically thin graphene further leads to excellent out-of-plane confinement, and consequently photonic-crystal-slab band structures that closely resemble those of ideal two-dimensional photonic crystals, with broad band gaps even when the slab thickness approaches zero. The overall photonic band structure not only scales with the graphene Fermi level, but more importantly scales to lower frequencies with reduced slab thickness. Just like ideal 2D photonic crystals, graphene-cladded photonic crystal slabs confine light along line defects, forming waveguides with the propagation lengths on the order of tens of lattice constants. The proposed structure opens up the possibility to dramatically reduce the size of terahertz photonic systems by orders of magnitude. PMID:27143314

Time-domain vibrational study on defects in ion-irradiated crystal

International Nuclear Information System (INIS)

Kitajima, M.

2003-01-01

We have studied the effects of point defects on coherent phonons in ion-implanted bismuth and graphite. Ultrafast dynamics of coherent phonons and photo-generated carriers in the femtosecond time-domain have been investigated by means of pump-probe reflectivity measurements. Point defects are introduced by irradiating graphite with 5 keV He + ions. For Bi the dephasing rate of the A 1g phonon increases linearly with increasing ion dose, which is explained by the additional dephasing process of the coherent phonon originated from scattering of phonons by the defects. For graphite, introduction of the defects enhances the carrier relaxation by opening a decay channel via vacancy-states, which competes efficiently with carrier-phonon scattering. The coherent acoustic phonon relaxation is also accelerated due to an additional scattering by defects. The linear fluence-dependence of the decay rate is understood as scattering of propagating acoustic phonon by single vacancies. (author)

In-line bulk supersaturation measurement by electrical conductometry in KDP crystal growth from aqueous solution

Science.gov (United States)

Bordui, P. F.; Loiacono, G. M.

1984-07-01

A method is presented for in-line bulk supersaturation measurement in crystal growth from aqueous solution. The method is based on a computer-controlled concentration measurement exploiting an experimentally predetermined cross-correlation between the concentration, electrical conductivity, and temperature of the growth solution. The method was applied to Holden crystallization of potassium dihydrogen phosphate (KDP). An extensive conductivity-temperature-concentration data base was generated for this system over a temperature range of 31 to 41°C. The method yielded continous, automated bulk supersaturation output accurate to within ±0.05 g KDP100 g water (±0.15% relative supersaturation).

Path-integral and Ornstein-Zernike study of quantum fluid structures on the crystallization line

International Nuclear Information System (INIS)

Sesé, Luis M.

2016-01-01

Liquid neon, liquid para-hydrogen, and the quantum hard-sphere fluid are studied with path integral Monte Carlo simulations and the Ornstein-Zernike pair equation on their respective crystallization lines. The results cover the whole sets of structures in the r-space and the k-space and, for completeness, the internal energies, pressures and isothermal compressibilities. Comparison with experiment is made wherever possible, and the possibilities of establishing k-space criteria for quantum crystallization based on the path-integral centroids are discussed. In this regard, the results show that the centroid structure factor contains two significant parameters related to its main peak features (amplitude and shape) that can be useful to characterize freezing.

Path-integral and Ornstein-Zernike study of quantum fluid structures on the crystallization line

Energy Technology Data Exchange (ETDEWEB)

Sesé, Luis M., E-mail: msese@ccia.uned.es [Departamento de Ciencias y Técnicas Fisicoquímicas, Universidad Nacional de Educación a Distancia, Paseo Senda del Rey 9, 28040 Madrid (Spain)

2016-03-07

Liquid neon, liquid para-hydrogen, and the quantum hard-sphere fluid are studied with path integral Monte Carlo simulations and the Ornstein-Zernike pair equation on their respective crystallization lines. The results cover the whole sets of structures in the r-space and the k-space and, for completeness, the internal energies, pressures and isothermal compressibilities. Comparison with experiment is made wherever possible, and the possibilities of establishing k-space criteria for quantum crystallization based on the path-integral centroids are discussed. In this regard, the results show that the centroid structure factor contains two significant parameters related to its main peak features (amplitude and shape) that can be useful to characterize freezing.

Disclinations, dislocations, and continuous defects: A reappraisal

Science.gov (United States)

Kleman, M.; Friedel, J.

2008-01-01

Disclinations were first observed in mesomorphic phases. They were later found relevant to a number of ill-ordered condensed-matter media involving continuous symmetries or frustrated order. Disclinations also appear in polycrystals at the edges of grain boundaries; but they are of limited interest in solid single crystals, where they can move only by diffusion climb and, owing to their large elastic stresses, mostly appear in close pairs of opposite signs. The relaxation mechanisms associated with a disclination in its creation, motion, and change of shape involve an interplay with continuous or quantized dislocations and/or continuous disclinations. These are attached to the disclinations or are akin to Nye’s dislocation densities, which are particularly well suited for consideration here. The notion of an extended Volterra process is introduced, which takes these relaxation processes into account and covers different situations where this interplay takes place. These concepts are illustrated by a variety of applications in amorphous solids, mesomorphic phases, and frustrated media in their curved habit space. These often involve disclination networks with specific node conditions. The powerful topological theory of line defects considers only defects stable against any change of boundary conditions or relaxation processes compatible with the structure considered. It can be seen as a simplified case of the approach considered here, particularly suited for media of high plasticity or/and complex structures. It cannot analyze the dynamical properties of defects nor the elastic constants involved in their static properties; topological stability cannot guarantee energetic stability, and sometimes cannot distinguish finer details of the structure of defects.

Cell lines derived from a Medaka radiation-sensitive mutant have defects in DNA double-strand break responses

International Nuclear Information System (INIS)

Hidaka, Masayuki; Oda, Shoji; Mitani, Hiroshi; Kuwahara, Yoshikazu; Fukumoto, Manabu

2010-01-01

It was reported that the radiation-sensitive Medaka mutant 'ric1' has a defect in the repair of DNA double-strand breaks (DSBs) induced by γ-rays during early embryogenesis. To study the cellular response of a ric1 mutant to ionizing radiation (IR), we established the mutant embryonic cell lines RIC1-e9, RIC1-e42, RIC1-e43. Following exposure to γ-irradiation, the DSBs in wild-type cells were repaired within 1 h, while those in RIC1 cells were not rejoined even after 2 h. Cell death was induced in the wild-type cells with cell fragmentation, but only a small proportion of the RIC1 cells underwent cell death, and without cell fragmentation. Although both wild-type and RIC1 cells showed mitotic inhibition immediately after γ-irradiation, cell division was much slower to resume in the wild-type cells (20 h versus 12 h). In both wild-type and RIC1 cells, Ser139 phosphorylated H2AX (γH2AX) foci were formed after γ-irradiation, however, the γH2AX foci disappeared more quickly in the RIC1 cell lines. These results suggest that the instability of γH2AX foci in RIC1 cells cause an aberration of the DNA damage response. As RIC1 cultured cells showed similar defective DNA repair as ric1 embryos and RIC1 cells revealed defective cell death and cell cycle checkpoint, they are useful for investigating DNA damage responses in vitro. (author)

Surface-defect induced modifications in the optical properties of α-MnO{sub 2} nanorods

Energy Technology Data Exchange (ETDEWEB)

John, Reenu Elizabeth [Department of Physics, St. Berchmans College, Changanassery, Kerala 686101 (India); Chandran, Anoop [School of Pure and Applied Physics, MG University, Kottayam, Kerala 686560 (India); Thomas, Marykutty [Department of Physics, BCM College, Kottayam, Kerala 686001 (India); Jose, Joshy [Department of Physics, St. Berchmans College, Changanassery, Kerala 686101 (India); George, K.C., E-mail: drkcgeorge@gmail.com [Department of Physics, St. Berchmans College, Changanassery, Kerala 686101 (India)

2016-03-30

Graphical abstract: - Highlights: • Alpha-MnO{sub 2} nanorods are prepared by chemical method. • Difference in surface defect density is achieved. • Characterized using XRD, Rietveld, XPS, EDS, HR-TEM, BET, UV–vis absorption spectroscopy and PL spectroscopy. • Explains the bandstructure modification due to Jahn–Teller distortions using crystal field theory. • Modification in the intensity of optical emissions related to defect levels validates the concept of surface defect induced tuning of optical properties. - Abstract: The science of defect engineering via surface tuning opens a new route to modify the inherent properties of nanomaterials for advanced functional and practical applications. In this work, two independent synthesis methods (hydrothermal and co-precipitation) are adopted to fabricate α-MnO{sub 2} nanorods with different defect structures so as to understand the effect of surface modifications on their optical properties. The crystal structure and morphology of samples are investigated with the aid of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Atomic composition calculated from energy dispersive spectroscopy (EDS) confirms non-stoichiometry of the samples. The surface properties and chemical environment are thoroughly studied using X-ray photoelectron spectroscopy (XPS) and Brunauer–Emmett–Teller (BET) analysis. Bond angle variance and bond valence sum are determined to validate distortions in the basic MnO{sub 6} octahedron. The surface studies indicate that the concentration of Jahn–Teller manganese (III) (Mn{sup 3+}) ion in the samples differ from each other which results in their distinct properties. Band structure modifications due to Jahn–Teller distortion are examined with the aid of ultraviolet–visible (UV) reflectance and photoluminescence (PL) studies. The dual peaks obtained in derivative spectrum conflict the current concept on the bandgap energy of MnO{sub 2}. These

Phase instability in crystals under irradiation

International Nuclear Information System (INIS)

Martin, G.

1975-01-01

A diffusion term is introduced in the standard chemical rate model of the defect population in crystals under irradiation. For point defect generation rates larger than a critical value (g*), the uniform point defect population is shown to be unstable with respect to spatial fluctuations of the point defect concentration. g* is temperature dependent. Severala effects including the nucleation of arrays of point defect clusters, or radiation induced precipitation may occur above the instability threshold. Defect-defect interaction potentials play a crucial role in the numerical value of this threshold [fr

Luminescence and photothermally stimulated defects creation processes in PbWO4:La3+, Y3+ (PWO II) crystals

International Nuclear Information System (INIS)

Auffray, E.; Korjik, M.; Zazubovich, S.

2015-01-01

Photoluminescence and thermally stimulated luminescence (TSL) are studied for a PbWO 4 crystal grown by the Czochralski method at Bogoroditsk Technical Chemical Plant, Russia from the melt with a precise tuning of the stoichiometry and co-doped with La 3+ and Y 3+ ions (the PWO II crystal). Photothermally stimulated processes of electron and hole centers creation under selective UV irradiation of this crystal in the 3.5–5.0 eV energy range and the 85–205 K temperature range are clarified and the optically created electron and hole centers are identified. The electrons in PWO II are mainly trapped at the (WO 4 ) 2− groups located close to single La 3+ and Y 3+ ions, producing the electron {(WO 4 ) 3− –La 3+ } and {(WO 4 ) 3− –Y 3+ } centers. The holes are mainly trapped at the regular oxygen ions O 2− located close to La 3+ and Y 3+ ions associated with lead vacancies, producing the hole O − (I)-type centers. No evidence of single-vacancy-related centers has been observed in PWO II. The data obtained indicate that excellent scintillation characteristics of the PWO II crystal can be explained by a negligible concentration of single (non-compensated) oxygen and lead vacancies as the traps for electrons and holes, respectively. - Highlights: • Photoluminescence of the PbWO 4 :La 3+ , Y 3+ (PWO II) crystal is investigated. • Creation of defects under UV irradiation of PWO II is studied by TSL. • Origin of dominating electron and hole centers is ascertained. • Concentration of single-vacancy-related centers is found to be negligible. • Excellent scintillation characteristics of the PWO II crystal are explained.

The pinning property of Bi-2212 single crystals with columnar defects

International Nuclear Information System (INIS)

Okamura, Kazunori; Kiuchi, Masaru; Otabe, Edmund Soji; Yasuda, Takashi; Matsushita, Teruo; Okayasu, Satoru

2004-01-01

It is qualitatively understood that the condensation energy density in oxide superconductors, which is one of the essential parameters for determining their pinning strength, becomes large with increasing dimensionality of the superconductor. However, the condensation energy density has not yet been evaluated quantitatively. Its value can be estimated from the elementary pinning force of a known defect. Columnar defects created by heavy ion irradiation are candidates for being such defects. That is, the size and number density of columnar defects can be given. In addition, it is known that two-dimensional vortices like those in Bi-2212 are forced into three-dimensional states by these defects in a magnetic field parallel to the defects. Thus, the condensation energy density can be estimated from the pinning property of the columnar defects even for two-dimensional superconductors. A similar analysis was performed also for three-dimensional Y-123. A discussion is given of the relationship between the condensation energy density and the anisotropy parameter estimated from measurements of anisotropic resistivity and peak field

Tunable photonic crystals with partial bandgaps from blue phase colloidal crystals and dielectric-doped blue phases.

Science.gov (United States)

Stimulak, Mitja; Ravnik, Miha

2014-09-07

Blue phase colloidal crystals and dielectric nanoparticle/polymer doped blue phases are demonstrated to combine multiple components with different symmetries in one photonic material, creating a photonic crystal with variable and micro-controllable photonic band structure. In this composite photonic material, one contribution to the band structure is determined by the 3D periodic birefringent orientational profile of the blue phases, whereas the second contribution emerges from the regular array of the colloidal particles or from the dielectric/nanoparticle-doped defect network. Using the planewave expansion method, optical photonic bands of the blue phase I and II colloidal crystals and related nanoparticle/polymer doped blue phases are calculated, and then compared to blue phases with no particles and to face-centred-cubic and body-centred-cubic colloidal crystals in isotropic background. We find opening of local band gaps at particular points of Brillouin zone for blue phase colloidal crystals, where there were none in blue phases without particles or dopants. Particle size and filling fraction of the blue phase defect network are demonstrated as parameters that can directly tune the optical bands and local band gaps. In the blue phase I colloidal crystal with an additionally doped defect network, interestingly, we find an indirect total band gap (with the exception of one point) at the entire edge of SC irreducible zone. Finally, this work demonstrates the role of combining multiple - by symmetry - differently organised components in one photonic crystal material, which offers a novel approach towards tunable soft matter photonic materials.

Structure and flux pinning properties of irradiation defects in YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kirk, M.A.

1992-06-01

We review our investigations of defects produced in YBa 2 Cu 3 O 7-x by various forms of irradiation. The defect microstructure has been studied by transmission electron microscopy (TEM). Irradiation enhancements of flux pinning have been studied by SQUID magnetometry on single crystals. In many cases the same single crystals were used in both TEM and SQUID investigations. The primary atom recoil spectra for all the irradiations studied have been carefully calculated and used to correlate the TEM and magnetization results for the different types of irradiation. Correlation of annealing experiments, employing both TEM and SQUID measurements, among several types of irradiation has also yielded information on the different defect structures present. Defect densities, sizes and strain field anisotropies have been determined by TEM. Defect flux pinning anisotropies have been determined for two field orientations in twinned single crystals. The temperature dependences of the flux pinning have been measured. The maximum field of irreversibility at 70 K is shown to change markedly upon both neutron and proton irradiations in some crystals and not others. The defect structure, chemistry and location in the unit cell has been determined in some cases. Some interaction with existing defect structure has been observed in proton and electron irradiations. The damage character and directionality has been determined in GeV ion irradiated crystals

Chromosomal Aberrations in DNA Repair Defective Cell Lines: Comparisons of Dose Rate and Radiation Quality

Science.gov (United States)

George, K. A.; Hada, M.; Patel, Z.; Huff, J.; Pluth, J. M.; Cucinotta, F. A.

2009-01-01

Chromosome aberration yields were assessed in DNA double-strand break repair (DSB) deficient cells after acute doses of gamma-rays or high-LET iron nuclei, or low dose-rate (0.018 Gy/hr) gamma-rays. We studied several cell lines including fibroblasts deficient in ATM (product of the gene that is mutated in ataxia telangiectasia patients) or NBS (product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase, DNA-PK activity. Chromosomes were analyzed using the fluorescence in-situ hybridization (FISH) chromosome painting method in cells at the first division post-irradiation and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma radiation induced higher yields of both simple and complex exchanges in the DSB repair defective cells than in the normal cells. The quadratic dose-response terms for both chromosome exchange types were significantly higher for the ATM and NBS defective lines than for normal fibroblasts. However, the linear dose-response term was significantly higher only for simple exchanges in the NBS cells. Large increases in the quadratic dose response terms indicate the important roles of ATM and NBS in chromatin modifications that facilitate correct DSB repair and minimize aberration formation. Differences in the response of AT and NBS deficient cells at lower doses suggests important questions about the applicability of observations of radiation sensitivity at high dose to low dose exposures. For all iron nuclei irradiated cells, regression models preferred purely linear and quadratic dose responses for simple and complex exchanges, respectively. All the DNA repair defective cell lines had lower Relative biological effectiveness (RBE) values than normal cells, the lowest being for the DNA-PK-deficient cells, which was near unity. To further

Synchrotron topography of grow defects in GdCa4O(BO3)3

International Nuclear Information System (INIS)

Wierzbicka, E.; Lefeld-Sosnowska, M.; Wierzchowski, W.; Wieteska, K.; Graeff, W.

2005-01-01

Gadolinium calcium oxyborane (GdCOB) is a perspective material, especially in the optoelectronics. GdCOB exhibits excellent nonlinear optical parameters and can be easily doped with Nd 3+ , Yb 3+ or Er 3+ ions. To be applied in the optoelectronics it is necessary to obtain crystals with small number of defects, which cause unwanted tensions changing optical properties of the material. The aim of the work was analysis of the defects distribution in the GdCOB and finding its dependence on the crystal growing conditions. Crystals were grown in the Institute of Electronic Materials Technology (ITME) using Czochralski method. Analyses of the crystal quality are the first studies performed using the synchrotron beam reflection topography in the white beam, monochromatic and projecting transmission topography and the Lang reflections. It has been shown, that the main observed defects are the dislocations, which occur in all crystals of different density depending on the grown parameters [pl

High-resolution measurements and multichannel quantum defect analysis of spectral line shapes of autoionizing Rydberg series

International Nuclear Information System (INIS)

Ueda, Kiyoshi

1997-01-01

Spectral line shapes for autoionizing Rydberg series are briefly reviewed within the framework of multichannel quantum defect theory (MQDT). Recent high-resolution measurements and MQDT analysis for the spectra line shapes are reviewed for the mp 5 ( 2 P 1/2 )ns ' and nd ' J=1 odd spectra of the Ar, Kr, and Xe atoms (m=3,4,5 for Ar, Kr, and Xe) and the 3p 5 ( 2 P 1/2 )nd ' J=2 and 3 odd spectra of Ar*3p 5 4p excited atoms. Some results are also discussed for the Ca 4p( 2 P 1/2,3/2 )ns and nd J=1 odd spectrum and the Ba 5d( 2 P 5/2 )nd J=1 odd spectrum

Lung Cancer Cell Line Screen Links Fanconi Anemia/BRCA Pathway Defects to Increased Relative Biological Effectiveness of Proton Radiation

International Nuclear Information System (INIS)

Liu, Qi; Ghosh, Priyanjali; Magpayo, Nicole; Testa, Mauro; Tang, Shikui; Gheorghiu, Liliana; Biggs, Peter; Paganetti, Harald; Efstathiou, Jason A.; Lu, Hsiao-Ming; Held, Kathryn D.; Willers, Henning

2015-01-01

Purpose: Growing knowledge of genomic heterogeneity in cancer, especially when it results in altered DNA damage responses, requires re-examination of the generic relative biological effectiveness (RBE) of 1.1 of protons. Methods and Materials: For determination of cellular radiosensitivity, we irradiated 17 lung cancer cell lines at the mid-spread-out Bragg peak of a clinical proton beam (linear energy transfer, 2.5 keV/μm). For comparison, 250-kVp X rays and 137 Cs γ-rays were used. To estimate the RBE of protons relative to 60 Co (Co60eq), we assigned an RBE(Co60Eq) of 1.1 to X rays to correct the physical dose measured. Standard DNA repair foci assays were used to monitor damage responses. FANCD2 was depleted using RNA interference. Results: Five lung cancer cell lines (29.4%) exhibited reduced clonogenic survival after proton irradiation compared with X-irradiation with the same physical doses. This was confirmed in a 3-dimensional sphere assay. Corresponding proton RBE(Co60Eq) estimates were statistically significantly different from 1.1 (P≤.05): 1.31 to 1.77 (for a survival fraction of 0.5). In 3 of these lines, increased RBE was correlated with alterations in the Fanconi anemia (FA)/BRCA pathway of DNA repair. In Calu-6 cells, the data pointed toward an FA pathway defect, leading to a previously unreported persistence of proton-induced RAD51 foci. The FA/BRCA-defective cells displayed a 25% increase in the size of subnuclear 53BP1 foci 18 hours after proton irradiation. Conclusions: Our cell line screen has revealed variations in proton RBE that are partly due to FA/BRCA pathway defects, suggesting that the use of a generic RBE for cancers should be revisited. We propose that functional biomarkers, such as size of residual 53BP1 foci, may be used to identify cancers with increased sensitivity to proton radiation

Lung Cancer Cell Line Screen Links Fanconi Anemia/BRCA Pathway Defects to Increased Relative Biological Effectiveness of Proton Radiation

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Ghosh, Priyanjali; Magpayo, Nicole [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Testa, Mauro; Tang, Shikui [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Gheorghiu, Liliana [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Biggs, Peter; Paganetti, Harald [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Efstathiou, Jason A. [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Lu, Hsiao-Ming [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Held, Kathryn D. [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Willers, Henning, E-mail: hwillers@mgh.harvard.edu [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States)

2015-04-01

Purpose: Growing knowledge of genomic heterogeneity in cancer, especially when it results in altered DNA damage responses, requires re-examination of the generic relative biological effectiveness (RBE) of 1.1 of protons. Methods and Materials: For determination of cellular radiosensitivity, we irradiated 17 lung cancer cell lines at the mid-spread-out Bragg peak of a clinical proton beam (linear energy transfer, 2.5 keV/μm). For comparison, 250-kVp X rays and {sup 137}Cs γ-rays were used. To estimate the RBE of protons relative to {sup 60}Co (Co60eq), we assigned an RBE(Co60Eq) of 1.1 to X rays to correct the physical dose measured. Standard DNA repair foci assays were used to monitor damage responses. FANCD2 was depleted using RNA interference. Results: Five lung cancer cell lines (29.4%) exhibited reduced clonogenic survival after proton irradiation compared with X-irradiation with the same physical doses. This was confirmed in a 3-dimensional sphere assay. Corresponding proton RBE(Co60Eq) estimates were statistically significantly different from 1.1 (P≤.05): 1.31 to 1.77 (for a survival fraction of 0.5). In 3 of these lines, increased RBE was correlated with alterations in the Fanconi anemia (FA)/BRCA pathway of DNA repair. In Calu-6 cells, the data pointed toward an FA pathway defect, leading to a previously unreported persistence of proton-induced RAD51 foci. The FA/BRCA-defective cells displayed a 25% increase in the size of subnuclear 53BP1 foci 18 hours after proton irradiation. Conclusions: Our cell line screen has revealed variations in proton RBE that are partly due to FA/BRCA pathway defects, suggesting that the use of a generic RBE for cancers should be revisited. We propose that functional biomarkers, such as size of residual 53BP1 foci, may be used to identify cancers with increased sensitivity to proton radiation.

Thermoluminescence response of a mixed ternary alkali halide crystals exposed to gamma rays

International Nuclear Information System (INIS)

Rodriguez M, R.; Perez S, R.; Vazquez P, G.; Riveros, H.; Gonzalez M, P.

2014-08-01

Ionic crystals, mainly alkali halide crystals have been the subject of intense research for a better understanding of the luminescence properties of defects induced by ionizing radiation. The defects in crystals can be produced in appreciable concentration due to elastic stresses, radiation, and addition of impurities. These defects exhibit remarkable thermoluminescence properties. This work is concerned with the Tl properties of a ternary alkali halide crystal after being irradiated with gamma and beta rays. It has been found that the Tl glow peak of the crystal follows a rule of average associated to the Tl Temperatures of the components of the mixture, similarly to the response of europium doped binary mixed crystals KCl x KBr 1-x and KBr x RbBr 1-x . (Author)

Fabrication and Measurements on Coupled Photonic Crystal Cavities

DEFF Research Database (Denmark)

Schubert, Martin

Quasi-three dimensional photonic crystals can be realized by fabricating thin membranes of high index material hanging in air patterned with sub-micron holes to create a photonic band gap for optical confinement in plane and total internal reflection for out of plane confinement. Introducing...... defects into the photonic crystal gives rise to defect states in the form of small confined modes. By embedding an active gain medium like quantum dots into the membrane makes it possible to realize lasers with ultra-small mode volumes and low thresholds. Unfortunately single cavity photonic crystal...

Electron irradiation-induced defects in {beta}-SiC

Energy Technology Data Exchange (ETDEWEB)

Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

1996-04-01

To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

Photonic-crystal fibers gyroscope

Directory of Open Access Journals (Sweden)

Ali Muse Haider

2015-01-01

Full Text Available In this paper we proposed to use of a photonic crystal fiber with an inner hollow defect. The use of such fibers is not affected by a material medium on the propagation of optical radiation. Photonic crystal fibers present special properties and capabilities that lead to an outstanding potential for sensing applications

Crystal growth and doping

International Nuclear Information System (INIS)

Paorici, C.

1980-01-01

Section 1 contains a self-consistent review of the basic growth features. After a short introduction concerning the driving force acting in a crystallization process, three main topics are broadly discussed: (i) interface kinetics; (ii) transport kinetics, and (iii) growth stability conditions. On point (i), after definition of the nature of interface, using Temkin's model, the growth mechanisms predicted by Burton, Cabrera and Frank (BCF) and bidimensional nucleation theories are fully developed. On points (ii) and (iii), the differential equations of the constitutional (concentration) and thermal fields are presented and discussed in terms of relevant approximations, suitable boundary conditions and limit values expected in order to have growth stability. Section 2 reports various experimental procedures for growing bulk crystals from the melt, from solutions and from the vapour phase. The basic concepts of Section 1 are amply employed for a critical discussion of possibilities, advantages and drawbacks of the methods described. Along the same lines, in Section 3 the principal epitaxial deposition procedures are highlighted. Section 4 contains a brief account of doping and of stoichiometry-defect control procedures. There is a long, carefully chosen list of bibliographical references. (author)

Liquid crystal boojum-colloids

International Nuclear Information System (INIS)

Tasinkevych, M; Silvestre, N M; Telo da Gama, M M

2012-01-01

Colloidal particles dispersed in a liquid crystal (LC) lead to distortions of the director field. The distortions are responsible for long-range effective colloidal interactions whose asymptotic behaviour is well understood. The short-distance behaviour depends on the structure and dynamics of the topological defects nucleated near the colloidal particles and a full nonlinear theory is required to describe it. Spherical colloidal particles with strong planar degenerate anchoring nucleate a pair of antipodal surface topological defects, known as boojums. We use the Landau-de Gennes theory to resolve the mesoscopic structure of the boojum cores and to determine the pairwise colloidal interactions. We compare the results in three (3D) and two (2D) spatial dimensions for spherical and disc-like colloidal particles, respectively. The corresponding free energy functionals are minimized numerically using finite elements with adaptive meshes. Boojums are always point-like in 2D, but acquire a rather complex structure in 3D, which depends on the combination of the anchoring potential, the radius of the colloid, the temperature and the LC elastic anisotropy. We identify three types of defect cores in 3D that we call single, double and split-core boojums, and investigate the associated structural transitions. The split-core structure is favoured by low temperatures, strong anchoring and small twist to splay or bend ratios. For sufficiently strong anchoring potentials characterized by a well-defined uniaxial minimum, the split-core boojums are the only stable configuration. In the presence of two colloidal particles, we observe substantial re-arrangements of the inner defects in both 3D and 2D. These re-arrangements lead to qualitative changes in the force-distance profile when compared to the asymptotic quadrupole-quadrupole interaction. In line with the experimental results, the presence of the defects prevents coalescence of the colloidal particles in 2D, but not in 3D

Defect engineering of ZnO

Energy Technology Data Exchange (ETDEWEB)

Weber, M.H. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)], E-mail: m_weber@wsu.edu; Selim, F.A.; Solodovnikov, D.; Lynn, K.G. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)

2008-10-31

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C.

Defect engineering of ZnO

International Nuclear Information System (INIS)

Weber, M.H.; Selim, F.A.; Solodovnikov, D.; Lynn, K.G.

2008-01-01

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C

Curvature-Controlled Topological Defects

Directory of Open Access Journals (Sweden)

Luka Mesarec

2017-05-01

Full Text Available Effectively, two-dimensional (2D closed films exhibiting in-plane orientational ordering (ordered shells might be instrumental for the realization of scaled crystals. In them, ordered shells are expected to play the role of atoms. Furthermore, topological defects (TDs within them would determine their valence. Namely, bonding among shells within an isotropic liquid matrix could be established via appropriate nano-binders (i.e., linkers which tend to be attached to the cores of TDs exploiting the defect core replacement mechanism. Consequently, by varying configurations of TDs one could nucleate growth of scaled crystals displaying different symmetries. For this purpose, it is of interest to develop a simple and robust mechanism via which one could control the position and number of TDs in such atoms. In this paper, we use a minimal mesoscopic model, where variational parameters are the 2D curvature tensor and the 2D orientational tensor order parameter. We demonstrate numerically the efficiency of the effective topological defect cancellation mechanism to predict positional assembling of TDs in ordered films characterized by spatially nonhomogeneous Gaussian curvature. Furthermore, we show how one could efficiently switch among qualitatively different structures by using a relative volume v of ordered shells, which represents a relatively simple naturally accessible control parameter.

Electron damage and defects in organic crystals

International Nuclear Information System (INIS)

Howitt, D.G.

1976-06-01

The nature of the defects discernable from and the radiation damage that is induced by high resolution electron microscopy is reported. The structural aspects of the radiation damage process can be correlated to the expected radiochemical decomposition of these materials and these effects identified. The types of local defect formed by radiation damage are often clearly distinguishable, in high resolution images, from those inherent in the microstructure. Techniques used in this type of electron microscopy and the limitations imposed by radiation damage are described as are the relevant radiochemical characteristics of these processes. In copper pthalocyanine, microstructural features distinct from those induced by radiation damage were identified which are consistent with those predicted and described by other workers in similar materials. The high resolution studies indicate that some of the microstructures observed are caused by structural rearrangements that can account, to some extent, for additional crystallographic forms that have been identified in this material and the photochemical behaviour of related structures

Defect modes caused by twinning in one-dimensional photonic crystals

Czech Academy of Sciences Publication Activity Database

Němec, Hynek; Duvillaret, L.; Quemeneur, F.; Kužel, Petr

2004-01-01

Roč. 21, č. 3 (2004), s. 548-553 ISSN 0740-3224 Institutional research plan: CEZ:AV0Z1010914 Keywords : photonic structures * twin-defect * defect levels * tuning Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.649, year: 2004

Molecular dynamics calculations of defect energetics in β-SiC

International Nuclear Information System (INIS)

Huang, H.; El-Azab, A.; Ghoniem, N.

1993-01-01

The Molecular Dynamics (MD) method is used to calculate defect energetics in β-silicon carbide. Many-body interaction effects in this covalent material are accounted for by using a hybrid of two-body and three-body potentials. Calculated bulk properties of β-SiC based on this potential are in agreement with experimental data to within 17%. A micro-crystal is constructed to represent the computational cell and external forces are applied to the micro-crystal so that it behaves as a part of an infinite medium. The potential energy for the unperturbed computational cell is first calculated. The cell is then set at a defect configuration and relaxed, and the potential energy of the relaxed cell is calculated. The difference between the potential energy of the unperturbed cell and that of the defect-containing cell is used to calculate the formation and binding energies of point defects, defect clusters and helium-vacancy clusters in SiC

Paramagnetic defects in KH{sub 2}PO{sub 4} crystals with high concentration of embedded TiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Grachev, Valentin G., E-mail: grachev@physics.montana.edu; Tse, Romand; Malovichko, Galina I. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Pritula, Igor M.; Bezkrovnaya, Olga N.; Kosinova, Anna V. [Institute for Single Crystals, NAS of Ukraine, Kharkiv (Ukraine)

2016-01-21

Qualitative transformations of spectra of Electron Paramagnetic Resonance, EPR, were found in KH{sub 2}PO{sub 4} crystals grown from liquor with 10{sup −5}–10{sup −1 }wt. % of anatase TiO{sub 2} nanoparticles in comparison with nominally pure KH{sub 2}PO{sub 4}. The nanoparticles have larger segregation coefficient for prismatic parts of the crystals than for pyramidal ones. Significant decrease in resonance absorption, complete disappearance of EPR lines of Fe{sup 3+} and Cr{sup 3+} centers, and appearance of four weak lines of equal intensities together with broad asymmetric lines with g-factors about 2.07–2.5 was observed in pyramidal parts grown with concentration of TiO{sub 2} nanoparticles larger than the threshold value 10{sup −2 }wt. %. The four lines were attributed to non-controlled impurity As substituted for P. In the presence of TiO{sub 2} nanoparticles, non-paramagnetic AsO{sub 4}{sup 3−} clusters trap electrons becoming AsO{sub 4}{sup 4−}. Disappearance of Fe{sup 3+} and Cr{sup 3+} centers was explained by their recharge to “EPR-silent” states and/or pairing at the surface of TiO{sub 2} nanoparticles.

BDA: A novel method for identifying defects in body-centered cubic crystals.

Science.gov (United States)

Möller, Johannes J; Bitzek, Erik

2016-01-01

The accurate and fast identification of crystallographic defects plays a key role for the analysis of atomistic simulation output data. For face-centered cubic (fcc) metals, most existing structure analysis tools allow for the direct distinction of common defects, such as stacking faults or certain low-index surfaces. For body-centered cubic (bcc) metals, on the other hand, a robust way to identify such defects is currently not easily available. We therefore introduce a new method for analyzing atomistic configurations of bcc metals, the BCC Defect Analysis (BDA). It uses existing structure analysis algorithms and combines their results to uniquely distinguish between typical defects in bcc metals. In essence, the BDA method offers the following features:•Identification of typical defect structures in bcc metals.•Reduction of erroneously identified defects by iterative comparison to the defects in the atom's neighborhood.•Availability as ready-to-use Python script for the widespread visualization tool OVITO [http://ovito.org].

Automated defect location and sizing by advanced ultrasonic techniques

International Nuclear Information System (INIS)

Murgatroyd, R.A.

1983-01-01

From this assessment of advanced automated defect location and sizing techniques it is concluded that, 1. Pulse-echo techniques, when used at high sensitivity, are capable of detecting all known defects in the test weldments inspected; 2. Search sensitivity has a marked influence on defect detection at both 1 and 2 MHz, and it is considered that 20% DAC is the highest amplitude threshold level which could be prudently adopted at the search stage; 3. The important through-thickness dimension of deeply buried defects in the height range 5 to 50mm can be sized to an estimated accuracy of +2mm using the Silk technique and that applying a SAFT-type algorithm to the data gives good lateral positioning of defects; 4. The 70 0 longitudinal wave twin-crystal technique has proved to be a highly effective method of detecting underclad cracks. A 70 0 shear wave, pulse-echo technique and a 0 0 longitudinal wave twin crystal method also give good detection results in the near surface region; 5. The Silk technique has been effective in sizing defects in the height range 5 to 35mm in the near-surface region

Phenomenon of ''self-cleaning'' of crystals

International Nuclear Information System (INIS)

Matveev, O.A.; Arkad'eva, E.N.; Goncharov, L.A.

1975-01-01

Crystals of germanium and cadmium telluride have been produced having the characteristics corresponding to the low content of electrically active impurities and crystal defects. The crystals have been grown under conditions of an equilibrium diffusion-concentration interaction of the impurities and crystal defects, with the donor alloying and controlling the acceptors concentration. These crystals have been studied with the help of the mass-spectral analysis, the Hall effect, photoelectroscopy, spectral photoconductivity and losses of collection of a charge from an ionizing particle on gamma-detectors fabricated of the crystals. Herein the doped composition of the crystals has been determined, the concentrations of the shallow and deep acceptors and donors have been measured separately, the life-times of the electrons and holes have been measured, the energetic position and the concentration of the carrier capture levels have been determined. The crystals grown possess all the characteristic features of rather pure crystals. The results of the mass-spectral analysis have shown that in the cadmium telluride crystals the impurities are present within 10 14 to 10 17 cm -3 . Therefore, a deep ''self-refining'' of the crystal takes place, which proceeds by means of deactivation of the electrically active centers with their associating into electrically inactive complexes. Thus a fact of the deep ''self-refining'' of germanium- and cadmium telluride crystals is stated. It is presumed that such a ''self-refining'' can actually proceed practically in all the crystals

Defect dynamics and coarsening dynamics in smectic-C films

Science.gov (United States)

Pargellis, A. N.; Finn, P.; Goodby, J. W.; Panizza, P.; Yurke, B.; Cladis, P. E.

1992-12-01

We study the dynamics of defects generated in free-standing films of liquid crystals following a thermal quench from the smectic-A phase to the smectic-C phase. The defects are type-1 disclinations, and the strain field between defect pairs is confined to 2π walls. We compare our observations with a phenomenological model that includes dipole coupling of the director field to an external ordering field. This model is able to account for both the observed coalescence dynamics and the observed ordering dynamics. In the absence of an ordering field, our model predicts the defect density ρ to scale with time t as ρ lnρ~t-1. When the dipole coupling of the director field to an external ordering field is included, both the model and experiments show the defect coarsening proceeds as ρ~e-αt with the strain field confined to 2π walls. The external ordering field most likely arises from the director's tendency to align with edge dislocations within the liquid-crystal film.

Thermoluminescence response of a mixed ternary alkali halide crystals exposed to gamma rays

Energy Technology Data Exchange (ETDEWEB)

Rodriguez M, R.; Perez S, R. [Universidad de Sonora, Departamento de Investigacion en Fisica, Apdo. Postal 5-088, 83190 Hermosillo, Sonora (Mexico); Vazquez P, G.; Riveros, H. [UNAM, Instituto de Fisica, Apdo. Postal 20-364, 01000 Mexico D. F. (Mexico); Gonzalez M, P., E-mail: mijangos@cifus.uson.mx [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2014-08-15

Ionic crystals, mainly alkali halide crystals have been the subject of intense research for a better understanding of the luminescence properties of defects induced by ionizing radiation. The defects in crystals can be produced in appreciable concentration due to elastic stresses, radiation, and addition of impurities. These defects exhibit remarkable thermoluminescence properties. This work is concerned with the Tl properties of a ternary alkali halide crystal after being irradiated with gamma and beta rays. It has been found that the Tl glow peak of the crystal follows a rule of average associated to the Tl Temperatures of the components of the mixture, similarly to the response of europium doped binary mixed crystals KCl{sub x}KBr{sub 1-x} and KBr{sub x}RbBr{sub 1-x}. (Author)

Change of elastic constants induced by point defects in hop crystals

International Nuclear Information System (INIS)

Tome, C.

1979-10-01

An approximate model is developed to calculate the change of elastic constants induced by point defects in hcp metals, supposed the defect configuration is known. General expressions relating the change of elastic moduli to the final atomic coordinates and to the defect force field are derived using the specific symmetry of the defect. Explicit calculations are done for Mg. The predicted change of elastic moduli turns out to be negative for vacancies and trigonal interstitials while for hexagonal interstitials a positive change is predicted. Compatibility with experimental data would suggest that the trigonal configuration is the stable one. (author)

Defect studies of thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

2014-01-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Conductivity of epitaxial and CVD graphene with correlated line defects

DEFF Research Database (Denmark)

Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

2014-01-01

Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due...

Barrier controlled carrier trapping of extended defects in CdZnTe detector

International Nuclear Information System (INIS)

Guo, Rongrong; Jie, Wanqi; Xu, Yadong; Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie

2015-01-01

Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established

Off-line analysis of positron annihilation spectra. I. Signature of crystal symmetry

International Nuclear Information System (INIS)

Adam, Gh.; Adam, S.

1997-01-01

While the technique of 2-D angular correlation of the electron-positron annihilation radiation (2D-ACAR) yields data in the laboratory frame, consistent off-line data analysis requires their reformulation in the crystal frame. In the case of an n-axis projected 2D-ACAR spectrum (where n denotes a principal crystallographic axis) of a high-T c superconductor, the crystal frame derivation needs enhancement of information on spectrum symmetry. The concept of signature of crystal symmetry (SCS) in a 2D-ACAR histogram discussed in this paper is a basic ingredient to the consistent solution of the problem. The SCS in a row 2D-ACAR histogram is defined as a collection of chi-square sums over M max + 1 sets of sites inside the detector-defined histogram plane. The number M max is fixed by choice of the principal crystallographic axis n-vector and the angular aperture of the setup. The necessity of this concept is discussed in Section 2. The correct understanding of the meaning of the SCS results heavily relies of that of the various sources contributing to the symmetry a 2D-ACAR spectrum. This point is discussed in Section 3. The quantitative definition of the SCS is detailed in Section 4. Finally, Section 5 is devoted to a short consideration of the computation of the SCS numerical values

Thermal, defects, mechanical and spectral properties of Nd-doped GdNbO{sub 4} laser crystal

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Wang, Xiaofei; Sun, Guihua; Li, Xiuli; Sun, Dunlu [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)

2017-05-15

A Nd-doped GdNbO{sub 4} crystal was grown successfully by Czochralski method. Its monoclinic structure was determined by X-ray diffraction; the unit-cell parameters are a = 5.38 Aa, b = 11.09 Aa, c = 5.11 Aa, and β = 94.56 . The morphological defects of Nd:GdNbO{sub 4} crystal were investigated using the chemical etching with the phosphoric acid etchant. For a new crystal, the physical properties are of great importance. The hardness and density of Nd:GdNbO{sub 4} were investigated first. Thermal properties of Nd:GdNbO{sub 4}, including thermal expansion coefficient and specific heat, were measured along a-, b-, and c-crystalline axes. Thermal properties indicate that the Nd:GdNbO{sub 4} pumped along c-axis can reduce the thermal lensing effect effectively. The specific heat is 0.53 J g{sup -1} K{sup -1} at 300 K, indicating a relatively high damage threshold of Nd:GdNbO{sub 4}. The transmission and emission spectrum of Nd:GdNbO{sub 4} were measured, and the absorption peaks were assigned. The strongest emission peak of Nd:GdNbO{sub 4} is located at 1065.3 nm in the spectral range of 850-1420 nm excited by 808 nm laser. The refractive index of Nd:GdNbO{sub 4} was calculated with the transmission spectrum and fitted with Sellmeier equation. All these obtained results is of great significance for the further research of Nd:GdNbO{sub 4}. (orig.)

Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

2017-05-15

The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

Dual Symmetry in Bent-Core Liquid Crystals and Unconventional Superconductors

Directory of Open Access Journals (Sweden)

Vladimir Lorman

2010-01-01

Full Text Available We extend the Landau theory of bent-core mesophases and d-wave high-Tc superconductors by considering additional secondary pseudo-proper order parameters. These systems exhibit a remarkable analogy relating their symmetry groups, lists of phases, and an infinite set of physical tensors. This analogy lies upon an internal dual structure shared by the two theories. We study the dual operator transforming rotations into translations in liquid crystals, and gauge symmetries into rotations in superconductors. It is used to classify the bent-core line defects, and to analyze the electronic gap structure of lamellar d-wave superfluids.

Adsorption, Desorption, Surface Diffusion, Lattice Defect Formation, and Kink Incorporation Processes of Particles on Growth Interfaces of Colloidal Crystals with Attractive Interactions

Directory of Open Access Journals (Sweden)

Yoshihisa Suzuki

2016-07-01

Full Text Available Good model systems are required in order to understand crystal growth processes because, in many cases, precise incorporation processes of atoms or molecules cannot be visualized easily at the atomic or molecular level. Using a transmission-type optical microscope, we have successfully observed in situ adsorption, desorption, surface diffusion, lattice defect formation, and kink incorporation of particles on growth interfaces of colloidal crystals of polystyrene particles in aqueous sodium polyacrylate solutions. Precise surface transportation and kink incorporation processes of the particles into the colloidal crystals with attractive interactions were observed in situ at the particle level. In particular, contrary to the conventional expectations, the diffusion of particles along steps around a two-dimensional island of the growth interface was not the main route for kink incorporation. This is probably due to the number of bonds between adsorbed particles and particles in a crystal; the number exceeds the limit at which a particle easily exchanges its position to the adjacent one along the step. We also found novel desorption processes of particles from steps to terraces, attributing them to the assistance of attractive forces from additionally adsorbing particles to the particles on the steps.

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Science.gov (United States)

Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

2018-05-01

We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

Topological Acoustic Delay Line

Science.gov (United States)

Zhang, Zhiwang; Tian, Ye; Cheng, Ying; Wei, Qi; Liu, Xiaojun; Christensen, Johan

2018-03-01

Topological protected wave engineering in artificially structured media is at the frontier of ongoing metamaterials research that is inspired by quantum mechanics. Acoustic analogues of electronic topological insulators have recently led to a wealth of new opportunities in manipulating sound propagation with strikingly unconventional acoustic edge modes immune to backscattering. Earlier fabrications of topological insulators are characterized by an unreconfigurable geometry and a very narrow frequency response, which severely hinders the exploration and design of useful devices. Here we establish topologically protected sound in reconfigurable phononic crystals that can be switched on and off simply by rotating its three-legged "atoms" without altering the lattice structure. In particular, we engineer robust phase delay defects that take advantage of the ultrabroadband reflection-free sound propagation. Such topological delay lines serve as a paradigm in compact acoustic devices, interconnects, and electroacoustic integrated circuits.

Response function of a moving contact line

Science.gov (United States)

Perrin, H.; Belardinelli, D.; Sbragaglia, M.; Andreotti, B.

2018-04-01

The hydrodynamics of a liquid-vapor interface in contact with a heterogeneous surface is largely impacted by the presence of defects at the smaller scales. Such defects introduce morphological disturbances on the contact line and ultimately determine the force exerted on the wedge of liquid in contact with the surface. From the mathematical point of view, defects introduce perturbation modes, whose space-time evolution is governed by the interfacial hydrodynamic equations of the contact line. In this paper we derive the response function of the contact line to such generic perturbations. The contact line response may be used to design simplified one-dimensional time-dependent models accounting for the complexity of interfacial flows coupled to nanoscale defects, yet offering a more tractable mathematical framework to explore contact line motion through a disordered energy landscape.

Defect formation and desorption of metal atoms from alkali halide crystals under low energy electron bombardment studied by optical absorption and mass spectroscopy

International Nuclear Information System (INIS)

Seifert, N.R.

1993-04-01

This work presents an extensive investigation of electronically induced desorption of ground-state alkali atoms from alkali halides and for the first time correlates directly the desorption with the stability and spatial distribution of the defects formed during bombardment. The electron impact results in the formation of stable F-centers and F-center clusters in the bulk of the crystals. In striking contrast a significant metallization of the surface is observed. Even at temperatures as low as 90 deg C the metallization is achieved within the time resolution of our detection system, which can only be explained by the rapid diffusion of hot holes. Superimposed to the fast and short diffusion of hot holes is the slow F-center diffusion. Measuring the distribution of defects with low energy ion sputtering techniques indicates that at least in the case of LiF the observed diffusion constant of F-centers agrees with values derived by using methods different from that applied here. At low temperatures the formation of F-center clusters and metal on the surface dominates. Colloid formation clearly requires higher temperatures (typically around 200 deg C). This is a strong evidence that efficient F-center diffusion is necessary for the formation of metallic particles (colloids) in the bulk of the crystals. Desorption of alkali atoms from alkali halides at temperatures around room temperature is due to weakly bound alkali atoms. For elevated temperatures the stability of the metallic clusters in the bulk of the crystals (i.e. colloids) are the rate limiting process. (author)

Synchrotron white beam topography studies of SrLaGaO4 crystals

International Nuclear Information System (INIS)

Wieteska, K.; Wierzchowski, W.; Graeff, W.; Lefeld-Sosnowska, M.; Pajaczkowska, A.; Wierzbicka, E.; Malinowska, A.

2005-01-01

Strontium lantanum gallate SrLaGaO 4 tetragonal single crystal was investigated by white beam synchrotron radiation topography. Projection and section topographs were taken in back reflection and transmission geometry. The central 'core' crystal region was practically free of defects; only one extended 'oval' defect with strong boundary contrast was observed. The strong white-black contrasts connected with elongated volume defects and cracks were observed in surrounding the 'core' region

Crystals for krypton helium-alpha line emission microscopy

Energy Technology Data Exchange (ETDEWEB)

Koch, Jeffrey A.; Haugh, Michael J.

2018-04-17

A system for reflecting and recording x-ray radiation from an x-ray emitting event to characterize the event. A crystal is aligned to receive radiation along a first path from an x-ray emitting event. Upon striking the crystal, the x-ray reflects from the crystal along a second path due to a reflection plane of the crystal defined by one of the following Miller indices: (9,7,3) or (11,3,3). Exemplary crystalline material is germanium. The x-rays are reflected to a detector aligned to receive reflected x-rays that are reflected from the crystal along the second path and the detector generates a detector signal in response to x-rays impacting the detector. The detector may include a CCD electronic detector, film plates, or any other detector type. A processor receives and processes the detector signal to generate reflection data representing the x-rays emitted from the x-ray emitting event.

Heterogeneous activation of H{sub 2}O{sub 2} by defect-engineered TiO{sub 2−x} single crystals for refractory pollutants degradation: A Fenton-like mechanism

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ai-Yong, E-mail: ayzhang@hfut.edu.cn; Lin, Tan; He, Yuan-Yi; Mou, Yu-Xuan

2016-07-05

Highlights: • Facet- and defect-engineered TiO{sub 2} is proposed for water treatment as Fenton-like catalyst. • The =Ti(III) center serves as lattice shuttle for electron transfer in H{sub 2}O{sub 2} activation. • TiO{sub 2} is promising due to low cost, high abundance, no toxicity and stable performance. - Abstract: The heterogeneous catalyst plays a key role in Fenton-like reaction for advanced oxidation of refractory pollutants in water treatment. Titanium dioxide (TiO{sub 2}) is a typical semiconductor with high industrial importance due to its earth abundance, low cost and no toxicity. In this work, it is found that TiO{sub 2} can heterogeneously activate hydrogen peroxide (H{sub 2}O{sub 2}, E° = 1.78 eV), a common chemical oxidant, to efficiently generate highly-powerful hydroxyl radical, ·OH (E{sup 0} = 2.80 eV), for advanced water treatment, when its crystal shape, exposed facet and oxygen-stoichiometry are finely tuned. The defect-engineered TiO{sub 2} single crystals exposed by high-energy {0 0 1} facets exhibited an excellent Fenton-like activity and stability for degrading typical refractory organic pollutants such as methyl orange and p-nitrophenol. Its defect-centered Fenton-like superiority is mainly attributed to the crystal oxygen-vacancy, single-crystalline structure and exposed polar {0 0 1} facet. Our findings could provide new chance to utilize TiO{sub 2} for Fenton-like technology, and develop novel heterogeneous catalyst for advanced water treatment.

Industrial application of ultrasound based in-line rheometry: Visualization of steady shear pipe flow of chocolate suspension in pre-crystallization process

Science.gov (United States)

Ouriev, Boris; Windhab, Erich; Braun, Peter; Zeng, Yuantong; Birkhofer, Beat

2003-12-01

In the present work an in-line ultrasonic method for investigation of the rheological flow behavior of concentrated suspensions was created. It is based on a nondestructive rheological measuring technique for pilot plant and industrial scale applications. Elsewhere the author discusses a tremendous need for in-line rheological characterization of highly concentrated suspensions exposed to pressure driven shear flow conditions. Most existing on-line methods are based on destructive macro actuators, which are not suitable for materials with sensitive to applied deformation structure. Since the process of our basic interest influences the structure of suspension it would be difficult to separate the effects of rheometric measurement and weakly pronounced structural changes arising from a fine adjustment of the process parameters. The magnitude of these effects is usually associated with the complex flow dynamics of structured liquids and is sensitive to density or temperature fluctuations around the moving rheometric actuator. Interpretation of the results of such measurements can be hindered by process parameter influences on liquid product structure. Therefore, the author introduces an in-line noninvasive rheometric method, which is implemented in a pre-crystallization process of chocolate suspension. Use of ultrasound velocity profile pressure difference (UVP-PD) technique enabled process monitoring of the chocolate pre-crystallization process. Influence of seeded crystals on Rheology of chocolate suspension was recorded and monitored on line. It was shown that even slight velocity pulsations in chocolate mainstream can strongly influence rheological properties besides influencing flow velocity profiles. Based on calculations of power law fit in raw velocity profiles and calculation of wall shear stress from pressure difference measurement, a viscosity function was calculated and monitored on line. On-line results were found to be in a good agreement with off-line

Experimental characterization of the flux-line lattice in superconducting V3Si

International Nuclear Information System (INIS)

Christen, D.; Chang, Y.; Kerchner, H.; Larson, B.; Narayan, J.; SeKula, S.

1983-01-01

Several microscopic properties of the flux-line lattice (FLL) in three separate single crystals of V 3 Si have been investigated by means of small-angle neutron diffraction. These low-field FLL characterizations have been correlated with the following material and superconducting properties: the real crystal symmetry parallel to the applied magnetic field; the micro-structure as determined by TEM; magnetic irreversibilities in the mixed state; reversible flux-line motion in ac response; martensitic structural transformation observed by X-ray diffraction. The three samples, V 3 Si-MP3, -MP4, and -MP5 possessed different defect structures, and this was manifested foremost in the FLL perfection. At low field (B 0-.5 T, but a highly mosaic, nearly polycrystalline FLL at lower fields. Sample MP4 contained large (500-1000 A) incoherent precipitates, and showed only a polycrystalline FLL at low field. In both MP3 and MP5, distinct anisotropic correlations were observed between the FLL morphology and the real-crystal direction along the applied field. The FLL perfection was strongly dependent on the growth history. The peak width history dependence for two different scattering geometries can be qualitatively modeled by proposed flux-pinning mechanisms. Quantitative comparisons with critical current measurements, however, are not totally reconcilable

Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon

International Nuclear Information System (INIS)

Molodkin, V.B.; Olikhovskii, S.I.; Len, E.G.; Kislovskii, E.N.; Kladko, V.P.; Reshetnyk, O.V.; Vladimirova, T.P.; Sheludchenko, B.V.

2009-01-01

The dynamical theory, which describes both diffraction profiles and reciprocal space maps measured from imperfect crystals with account for instrumental factors of triple-crystal diffractometer (TCD), has been developed for adequate quantitative characterization of microdefects. Analytical expressions for coherent and diffuse scattering (DS) intensities measured by TCD in the Bragg diffraction geometry have been derived by using the generalized statistical dynamical theory of X-ray scattering in real single crystals with randomly distributed defects. The DS intensity distributions from single crystals containing clusters and dislocation loops have been described by explicit analytical expressions. Particularly, these expressions take into account anisotropy of displacement fields around defects with discrete orientations. Characteristics of microdefect structures in silicon single crystals grown by Czochralsky- and float-zone methods have been determined by analyzing the measured TCD profiles and reciprocal space maps. The sensitivities of reciprocal space maps and diffraction profiles to defect characteristics have been compared. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Physical Properties of Liquid Crystals

CERN Document Server

Gray, George W; Spiess, Hans W

1999-01-01

This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.

Creep of crystals

International Nuclear Information System (INIS)

Poirier, J.-P.

1988-01-01

Creep mechanisms for metals, ceramics and rocks, effect of pressure and temperature on deformation processes are considered. The role of crystal defects is analysed, different models of creep are described. Deformation mechanisms maps for different materials are presented

A Tunable Eight-Wavelength Terahertz Modulator Based on Photonic Crystals

Science.gov (United States)

Ji, K.; Chen, H.; Zhou, W.; Zhuang, Y.; Wang, J.

2017-11-01

We propose a tunable eight-wavelength terahertz modulator based on a structure of triple triangular lattice photonic crystals by using photonic crystals in the terahertz regime. The triple triangular lattice was formed by nesting circular, square, and triangular dielectric cylinders. Three square point defects were introduced into the perfect photonic crystal to produce eight defect modes. GaAs was used as the point defects to realize tunability. We used a structure with a reflecting barrier to achieve modulation at high transmission rate. The insertion loss and extinction ratio were 0.122 and 38.54 dB, respectively. The modulation rate was 0.788 dB. The performance of the eightwavelength terahertz modulator showed great potential for use in future terahertz communication systems.

Defect characterization with positron annihilation

International Nuclear Information System (INIS)

Granatelli, L.; Lynn, K.G.

1980-01-01

Positron annihilation in metal crystals is reviewed. A brief introduction to the positron annihilation technique is presented first. Then the ability of the positron technique to perform microstructural characterization of four types of lattice defects (vacancies, voids, dislocations, grain boundaries) is discussed. It is frequently not possible to obtain samples that contain only one type of defect in nonnegligible concentrations. Such situations exist for some alloys and for fatigued metal samples. Finally, the current limitations and some future prospects of the technique are presented. 79 references, 14 figures, 1 table

The influence of defect drift in external electric field on green luminescence of ZnO single crystals

International Nuclear Information System (INIS)

Korsunska, N.O.; Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Kushnirenko, V.I.; Markevich, I.V.

2003-01-01

In nominally undoped Zn O single crystals, the influence of electric field on photoluminescence in visible wavelength range was investigated. A well-known broad unstructured band consisting of green and orange ones was observed. It was found that the action of direct electric field of about 100 V/cm at 600-700 deg. C resulted in the increase of green band intensity near the cathode and its decrease near the anode, while orange band intensity was not influenced by this treatment. The redistribution of green band intensity along the sample under electric field is accounted for by drift of zinc interstitials from the anode to the cathode. It is supposed that emitting centres responsible for green luminescence are complex defects including zinc interstitials

Defect-Tolerant Monolayer Transition Metal Dichalcogenides

DEFF Research Database (Denmark)

Pandey, Mohnish; Rasmussen, Filip Anselm; Kuhar, Korina

2016-01-01

Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with a lower tendency to form defect induced deep gap states are termed defect-tolerant. Here we provide a systematic first...... the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to nonpolar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within......-principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy, while the TMDs based on group IV metals form only...

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

Probing vacancy-type free-volume defects in Li2B4O7 single crystal by positron annihilation lifetime spectroscopy

Science.gov (United States)

Shpotyuk, O.; Adamiv, V.; Teslyuk, I.; Ingram, A.; Demchenko, P.

2018-01-01

Vacancy-type free-volume defects in lithium tetraborate Li2B4O7 single crystal, grown by the Czochralski technique, are probed with positron annihilation spectroscopy in the lifetime measuring mode. The experimental positron lifetime spectrum is reconstructed within the three-component fitting, involving channels of positron and positronium Ps trapping, as well as within the two-component fitting with a positronium-compensating source input. Structural configurations of the most efficient positron traps are considered using the crystallographic specificity of lithium tetraborate with the main accent on cation-type vacancies. Possible channels of positron trapping are visualized using the electronic structure calculations with density functional theory at the basis of structural parameters proper to Li2B4O7. Spatially-extended positron-trapping complexes involving singly-ionized lithium vacancies, with character lifetime close to 0.32 ns, are responsible for positron trapping in the nominally undoped lithium tetraborate Li2B4O7 crystal.

Defect-impurity interactions in irradiated germanium

International Nuclear Information System (INIS)

Cleland, J.W.; James, F.J.; Westbrook, R.D.

1975-07-01

Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

Point defects in platinum

International Nuclear Information System (INIS)

Piercy, G.R.

1960-01-01

An investigation was made of the mobility and types of point defect introduced in platinum by deformation in liquid nitrogen, quenching into water from 1600 o C, or reactor irradiation at 50 o C. In all cases the activation energy for motion of the defect was determined from measurements of electrical resistivity. Measurements of density, hardness, and x-ray line broadening were also made there applicable. These experiments indicated that the principal defects remaining in platinum after irradiation were single vacant lattice sites and after quenching were pairs of vacant lattice sites. Those present after deformation In liquid nitrogen were single vacant lattice sites and another type of defect, perhaps interstitial atoms. (author)

Positron annihilation spectroscopy in defects of semiconductors

International Nuclear Information System (INIS)

Fujinami, Masanori

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

Modeling Defects, Shape Evolution, and Programmed Auto-origami in Liquid Crystal Elastomers

Science.gov (United States)

Konya, Andrew; Gimenez-Pinto, Vianney; Selinger, Robin

2016-06-01

Liquid crystal elastomers represent a novel class of programmable shape-transforming materials whose shape change trajectory is encoded in the material’s nematic director field. Using three-dimensional nonlinear finite element elastodynamics simulation, we model a variety of different actuation geometries and device designs: thin films containing topological defects, patterns that induce formation of folds and twists, and a bas-relief structure. The inclusion of finite bending energy in the simulation model reveals features of actuation trajectory that may be absent when bending energy is neglected. We examine geometries with a director pattern uniform through the film thickness encoding multiple regions of positive Gaussian curvature. Simulations indicate that heating such a system uniformly produces a disordered state with curved regions emerging randomly in both directions due to the film’s up/down symmetry. By contrast, applying a thermal gradient by heating the material first on one side breaks up/down symmetry and results in a deterministic trajectory producing a more ordered final shape. We demonstrate that a folding zone design containing cut-out areas accommodates transverse displacements without warping or buckling; and demonstrate that bas-relief and more complex bent/twisted structures can be assembled by combining simple design motifs.

Modeling Defects, Shape Evolution, and Programmed Auto-origami in Liquid Crystal Elastomers

Directory of Open Access Journals (Sweden)

Andrew eKonya

2016-06-01

Full Text Available Liquid crystal elastomers represent a novel class of programmable shape-transforming materials whose shape change trajectory is encoded in the material’s nematic director field. Using three-dimensional nonlinear finite element elastodynamics simulation, we model a variety of different actuation geometries and device designs: thin films containing topological defects, patterns that induce formation of folds and twists, and a bas-relief structure. The inclusion of finite bending energy in the simulation model reveals features of actuation trajectory that may be absent when bending energy is neglected. We examine geometries with a director pattern uniform through the film thickness encoding multiple regions of positive Gaussian curvature. Simulations indicate that heating such a system uniformly produces a disordered state with curved regions emerging randomly in both directions due to the film’s up/down symmetry. By contrast, applying a thermal gradient by heating the material first on one side breaks up/down symmetry and results in a deterministic trajectory producing a more ordered final shape. We demonstrate that a folding zone design containing cut-out areas accommodates transverse displacements without warping or buckling; and demonstrate that bas-relief and more complex bent/twisted structures can be assembled by combining simple design motifs.

The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

International Nuclear Information System (INIS)

Zheng, Dahuai; Yao, Jiaying; Kong, Yongfa; Liu, Shiguo; Zhang, Ling; Chen, Shaolin; Xu, Jingjun

2015-01-01

Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm 2 ). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals

The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

Energy Technology Data Exchange (ETDEWEB)

Zheng, Dahuai; Yao, Jiaying [School of Physics, Nankai University, Tianjin 300071 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Kong, Yongfa, E-mail: kongyf@nankai.edu.cn [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); R and D Center, Taishan Sports Industry Group, Leling 253600 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Liu, Shiguo [School of Physics, Nankai University, Tianjin 300071 (China); Zhang, Ling; Chen, Shaolin [MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Xu, Jingjun [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China)

2015-01-15

Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

Pollen developmental defects in ZD-CMS rice line explored by cytological, molecular and proteomic approaches.

Science.gov (United States)

Yan, Junjie; Tian, Han; Wang, Shuzhen; Shao, Jinzhen; Zheng, Yinzhen; Zhang, Hongyuan; Guo, Lin; Ding, Yi

2014-08-28

Cytoplasmic male sterility (CMS) is a widely observed phenomenon, which is especially useful in hybrid seed production. Meixiang A (MxA) is a new rice CMS line derived from a pollen-free sterile line named Yunnan ZidaoA (ZD-CMS). In this study, a homologous WA352 gene with variation in two nucleotides was identified in MxA. Cytological analysis revealed that MxA was aborted in the early uninucleate stage. The protein expression profiles of MxA and its maintainer line MeixiangB (MxB) were systematically compared using iTRAQ-based quantitative proteomics technology using young florets at the early uninucleate stage. A total of 688 proteins were quantified in both rice lines, and 45 of these proteins were found to be differentially expressed. Bioinformatics analysis indicated a large number of the proteins involved in carbohydrate metabolism or the stress response were downregulated in MxA, suggesting that these metabolic processes had been hindered during pollen development in MxA. The ROS (reactive oxygen species) level was increased in the mitochondrion of MxA, and further ultrastructural analysis showed the mitochondria with disrupted cristae in the rice CMS line MxA. These findings substantially contribute to our knowledge of pollen developmental defects in ZD-CMS rice line. MeixiangA (MxA) is a new type of rice CMS line, which is derived from pollen-free sterile line Yunnan ZidaoA. In this study, the cytological, molecular and proteomic approaches were used to study the characteristics of this new CMS line. Cytological study indicates the CMS line is aborted at the early uninucleate stage. A potential sterile gene ZD352 is identified in MxA, the protein product of which is mainly accumulated at the MMC/Meiotic stage. iTRAQ based proteomic analysis is performed to study the relevant proteins involved in the CMS occurance, 45 proteins are found to be significant differentially expressed and these proteins are involved in many cellular processes such as

Quality improvement of CdZnTe single crystal by ultrasound processing

Science.gov (United States)

Lisiansky, M.; Berner, A.; Korchnoy, V.

2017-06-01

Intrinsic defects and contaminations removal from the undoped p-type Cd0.96Zn0.04Te single crystals has been achieved by the ultrasound vibration processing at the room temperature. Surface analysis based on Auger Electron Spectroscopy, Energy Dispersive Spectroscopy, and Scanning Electron Spectroscopy shows a significant reconstruction of the crystal surface after processing, namely, the appearance of numerous "volcano craters" and triangle-shaped defects with a typical size of 0.2-5.0 μm. Elemental analysis of these defects shows that they are Te inclusions emerged on the surface. The regular crystal surface outside the defects also displays a considerable enrichment by Te. Distinct presence of copper is found in both the thin surface layer and in the defects emerged on the surface. The surface reconstruction is associated with a remarkable change in the bulk material properties, electrical (an increase in the resistivity by a factor of ∼6) and optical (an IR transmittance increase). A post-polishing following the ultrasound processing makes the CdZnTe material more stable and reliable for a wide range of device applications.

Study on grown-in defects in CZ-Si by positron annihilation

International Nuclear Information System (INIS)

Nakagawa, S.; Hori, F.; Oshima, R.

2004-01-01

In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism

Science.gov (United States)

Debelle, Aurélien; Crocombette, Jean-Paul; Boulle, Alexandre; Chartier, Alain; Jourdan, Thomas; Pellegrino, Stéphanie; Bachiller-Perea, Diana; Carpentier, Denise; Channagiri, Jayanth; Nguyen, Tien-Hien; Garrido, Frédérico; Thomé, Lionel

2018-01-01

Modification of materials using ion beams has become a widespread route to improve or design materials for advanced applications, from ion doping for microelectronic devices to emulation of nuclear reactor environments. Yet, despite decades of studies, major issues regarding ion/solid interactions are not solved, one of them being the lattice-strain development process in irradiated crystals. In this work, we address this question using a consistent approach that combines x-ray diffraction (XRD) measurements with both molecular dynamics (MD) and rate equation cluster dynamics (RECD) simulations. We investigate four distinct materials that differ notably in terms of crystalline structure and nature of the atomic bonding. We demonstrate that these materials exhibit a common behavior with respect to the strain development process. In fact, a strain build-up followed by a strain relaxation is observed in the four investigated cases. The strain variation is unambiguously ascribed to a change in the defect configuration, as revealed by MD simulations. Strain development is due to the clustering of interstitial defects into dislocation loops, while the strain release is associated with the disappearance of these loops through their integration into a network of dislocation lines. RECD calculations of strain depth profiles, which are in agreement with experimental data, indicate that the driving force for the change in the defect nature is the defect clustering process. This study paves the way for quantitative predictions of the microstructure changes in irradiated materials.

Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

International Nuclear Information System (INIS)

Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

2006-01-01

A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

Investigation of the growth defects in strontium titanate single crystals

Energy Technology Data Exchange (ETDEWEB)

Kulagin, N A; Landar, S V; Podus, L P [Khar' kovskij Gosudarstvennyj Univ. (Ukrainian SSR)

1981-02-01

Investigation results of characteristics and reasons for formation of macroscopic growth defects in SrTiO/sub 3/ monocrystals grown up by Wernail method are presented. It is shown that blue colour occurring in the specimen volume is caused by shortage of oxygen during growing which results in transition of some ions from tetravalent to trivalent state. The defect of another type is characterized by increased content of Fe and Ni oxides.

Influence of structural defects on excitonic photoluminescence of pentacene

International Nuclear Information System (INIS)

Piryatins'kij, Yu.P.; Kurik, M.V.

2011-01-01

The exciton reflection, absorption, and photoluminescence spectra for single crystals and polycrystalline films have been studied in the temperature range of 4.2-296 K. A significant influence of structural defects arising during phase transitions on the exciton spectra of pentacene has been detected. The mechanisms of photoluminescence in single crystals and crystalline films of pentacene have been considered.