High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

International Nuclear Information System (INIS)

Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

2016-01-01

A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Tian, Y., E-mail: cycjty@sophie.q.t.u-tokyo.ac.jp [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Shimazoe, K.; Yan, X. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ueda, O.; Ishikura, T. [Fuji Electric Co., Ltd., Fuji, Hino, Tokyo 191-8502 (Japan); Fujiwara, T. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Uesaka, M.; Ohno, M. [Nuclear Professional School, the University of Tokyo, 2-22 Shirakata-shirane, Tokai, Ibaraki 319-1188 (Japan); Tomita, H. [Department of Quantum Engineering, Nagoya University, Furo, Chikusa, Nagoya 464-8603 (Japan); Yoshihara, Y. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takahashi, H. [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-09-11

A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

Muon counting using silicon photomultipliers in the AMIGA detector of the Pierre Auger observatory

Science.gov (United States)

Aab, A.; Abreu, P.; Aglietta, M.; Ahn, E. J.; Samarai, I. Al; Albuquerque, I. F. M.; Allekotte, I.; Allison, P.; Almela, A.; Alvarez Castillo, J.; Alvarez-Muñiz, J.; Ambrosio, M.; Anastasi, G. A.; Anchordoqui, L.; Andrada, B.; Andringa, S.; Aramo, C.; Arqueros, F.; Arsene, N.; Asorey, H.; Assis, P.; Aublin, J.; Avila, G.; Badescu, A. M.; Balaceanu, A.; Baus, C.; Beatty, J. J.; Becker, K. H.; Bellido, J. A.; Berat, C.; Bertaina, M. E.; Bertou, X.; Biermann, P. L.; Billoir, P.; Biteau, J.; Blaess, S. G.; Blanco, A.; Blazek, J.; Bleve, C.; Boháčová, M.; Boncioli, D.; Bonifazi, C.; Borodai, N.; Botti, A. M.; Brack, J.; Brancus, I.; Bretz, T.; Bridgeman, A.; Briechle, F. L.; Buchholz, P.; Bueno, A.; Buitink, S.; Buscemi, M.; Caballero-Mora, K. S.; Caccianiga, B.; Caccianiga, L.; Cancio, A.; Canfora, F.; Caramete, L.; Caruso, R.; Castellina, A.; Cataldi, G.; Cazon, L.; Cester, R.; Chavez, A. G.; Chiavassa, A.; Chinellato, J. A.; Chudoba, J.; Clay, R. W.; Colalillo, R.; Coleman, A.; Collica, L.; Coluccia, M. R.; Conceição, R.; Contreras, F.; Cooper, M. J.; Coutu, S.; Covault, C. E.; Cronin, J.; Dallier, R.; D'Amico, S.; Daniel, B.; Dasso, S.; Daumiller, K.; Dawson, B. R.; de Almeida, R. M.; de Jong, S. J.; De Mauro, G.; de Mello Neto, J. R. T.; De Mitri, I.; de Oliveira, J.; de Souza, V.; Debatin, J.; del Peral, L.; Deligny, O.; Di Giulio, C.; Di Matteo, A.; Díaz Castro, M. L.; Diogo, F.; Dobrigkeit, C.; D'Olivo, J. C.; Dorofeev, A.; dos Anjos, R. C.; Dova, M. T.; Dundovic, A.; Ebr, J.; Engel, R.; Erdmann, M.; Erfani, M.; Escobar, C. O.; Espadanal, J.; Etchegoyen, A.; Falcke, H.; Fang, K.; Farrar, G.; Fauth, A. C.; Fazzini, N.; Fick, B.; Figueira, J. M.; Filevich, A.; Filipčič, A.; Fratu, O.; Freire, M. M.; Fujii, T.; Fuster, A.; García, B.; Garcia-Pinto, D.; Gaté, F.; Gemmeke, H.; Gherghel-Lascu, A.; Ghia, P. L.; Giaccari, U.; Giammarchi, M.; Giller, M.; Głas, D.; Glaser, C.; Glass, H.; Golup, G.; Gómez Berisso, M.; Gómez Vitale, P. F.; González, N.; Gookin, B.; Gordon, J.; Gorgi, A.; Gorham, P.; Gouffon, P.; Grillo, A. F.; Grubb, T. D.; Guarino, F.; Guedes, G. P.; Hampel, M. R.; Hansen, P.; Harari, D.; Harrison, T. A.; Harton, J. L.; Hasankiadeh, Q.; Haungs, A.; Hebbeker, T.; Heck, D.; Heimann, P.; Herve, A. E.; Hill, G. C.; Hojvat, C.; Holt, E.; Homola, P.; Hörandel, J. R.; Horvath, P.; Hrabovský, M.; Huege, T.; Hulsman, J.; Insolia, A.; Isar, P. G.; Jandt, I.; Jansen, S.; Johnsen, J. A.; Josebachuili, M.; Kääpä, A.; Kambeitz, O.; Kampert, K. H.; Kasper, P.; Katkov, I.; Keilhauer, B.; Kemp, E.; Kieckhafer, R. M.; Klages, H. O.; Kleifges, M.; Kleinfeller, J.; Krause, R.; Krohm, N.; Kuempel, D.; Kukec Mezek, G.; Kunka, N.; Kuotb Awad, A.; LaHurd, D.; Latronico, L.; Lauscher, M.; Lebrun, P.; Legumina, R.; Leigui de Oliveira, M. A.; Letessier-Selvon, A.; Lhenry-Yvon, I.; Link, K.; Lopes, L.; López, R.; López Casado, A.; Luce, Q.; Lucero, A.; Malacari, M.; Mallamaci, M.; Mandat, D.; Mantsch, P.; Mariazzi, A. G.; Mariş, I. C.; Marsella, G.; Martello, D.; Martinez, H.; Martínez Bravo, O.; Masías Meza, J. J.; Mathes, H. J.; Mathys, S.; Matthews, J.; Matthews, J. A. J.; Matthiae, G.; Mayotte, E.; Mazur, P. O.; Medina, C.; Medina-Tanco, G.; Melo, D.; Menshikov, A.; Messina, S.; Micheletti, M. I.; Middendorf, L.; Minaya, I. A.; Miramonti, L.; Mitrica, B.; Mockler, D.; Molina-Bueno, L.; Mollerach, S.; Montanet, F.; Morello, C.; Mostafá, M.; Müller, G.; Muller, M. A.; Müller, S.; Naranjo, I.; Navas, S.; Nellen, L.; Neuser, J.; Nguyen, P. H.; Niculescu-Oglinzanu, M.; Niechciol, M.; Niemietz, L.; Niggemann, T.; Nitz, D.; Nosek, D.; Novotny, V.; Nožka, H.; Núñez, L. A.; Ochilo, L.; Oikonomou, F.; Olinto, A.; Pakk Selmi-Dei, D.; Palatka, M.; Pallotta, J.; Papenbreer, P.; Parente, G.; Parra, A.; Paul, T.; Pech, M.; Pedreira, F.; Pȩkala, J.; Pelayo, R.; Peña-Rodriguez, J.; Pereira, L. A. S.; Perrone, L.; Peters, C.; Petrera, S.; Phuntsok, J.; Piegaia, R.; Pierog, T.; Pieroni, P.; Pimenta, M.; Pirronello, V.; Platino, M.; Plum, M.; Porowski, C.; Prado, R. R.; Privitera, P.; Prouza, M.; Quel, E. J.; Querchfeld, S.; Quinn, S.; Ramos-Pollant, R.; Rautenberg, J.; Ravignani, D.; Reinert, D.; Revenu, B.; Ridky, J.; Risse, M.; Ristori, P.; Rizi, V.; Rodrigues de Carvalho, W.; Rodriguez Fernandez, G.; Rodriguez Rojo, J.; Rodríguez-Frías, M. D.; Rogozin, D.; Rosado, J.; Roth, M.; Roulet, E.; Rovero, A. C.; Saffi, S. J.; Saftoiu, A.; Salazar, H.; Saleh, A.; Salesa Greus, F.; Salina, G.; Sanabria Gomez, J. D.; Sánchez, F.; Sanchez-Lucas, P.; Santos, E. M.; Santos, E.; Sarazin, F.; Sarkar, B.; Sarmento, R.; Sarmiento-Cano, C.; Sato, R.; Scarso, C.; Schauer, M.; Scherini, V.; Schieler, H.; Schmidt, D.; Scholten, O.; Schovánek, P.; Schröder, F. G.; Schulz, A.; Schulz, J.; Schumacher, J.; Sciutto, S. J.; Segreto, A.; Settimo, M.; Shadkam, A.; Shellard, R. C.; Sigl, G.; Silli, G.; Sima, O.; Śmiałkowski, A.; Šmída, R.; Snow, G. R.; Sommers, P.; Sonntag, S.; Sorokin, J.; Squartini, R.; Stanca, D.; Stanič, S.; Stasielak, J.; Strafella, F.; Suarez, F.; Suarez Durán, M.; Sudholz, T.; Suomijärvi, T.; Supanitsky, A. D.; Sutherland, M. S.; Swain, J.; Szadkowski, Z.; Taborda, O. A.; Tapia, A.; Tepe, A.; Theodoro, V. M.; Timmermans, C.; Todero Peixoto, C. J.; Tomankova, L.; Tomé, B.; Tonachini, A.; Torralba Elipe, G.; Torres Machado, D.; Torri, M.; Travnicek, P.; Trini, M.; Ulrich, R.; Unger, M.; Urban, M.; Valbuena-Delgado, A.; Valdés Galicia, J. F.; Valiño, I.; Valore, L.; van Aar, G.; van Bodegom, P.; van den Berg, A. M.; van Vliet, A.; Varela, E.; Vargas Cárdenas, B.; Varner, G.; Vázquez, J. R.; Vázquez, R. A.; Veberič, D.; Verzi, V.; Vicha, J.; Villaseñor, L.; Vorobiov, S.; Wahlberg, H.; Wainberg, O.; Walz, D.; Watson, A. A.; Weber, M.; Weindl, A.; Wiencke, L.; Wilczyński, H.; Winchen, T.; Wittkowski, D.; Wundheiler, B.; Wykes, S.; Yang, L.; Yelos, D.; Yushkov, A.; Zas, E.; Zavrtanik, D.; Zavrtanik, M.; Zepeda, A.; Zimmermann, B.; Ziolkowski, M.; Zong, Z.; Zuccarello, F.

2017-03-01

AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), is proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.

Surface effects in segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis

2017-05-15

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

Surface effects in segmented silicon sensors

International Nuclear Information System (INIS)

Kopsalis, Ioannis

2017-05-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

Automatic choroid cells segmentation and counting based on approximate convexity and concavity of chain code in fluorescence microscopic image

Science.gov (United States)

Lu, Weihua; Chen, Xinjian; Zhu, Weifang; Yang, Lei; Cao, Zhaoyuan; Chen, Haoyu

2015-03-01

In this paper, we proposed a method based on the Freeman chain code to segment and count rhesus choroid-retinal vascular endothelial cells (RF/6A) automatically for fluorescence microscopy images. The proposed method consists of four main steps. First, a threshold filter and morphological transform were applied to reduce the noise. Second, the boundary information was used to generate the Freeman chain codes. Third, the concave points were found based on the relationship between the difference of the chain code and the curvature. Finally, cells segmentation and counting were completed based on the characteristics of the number of the concave points, the area and shape of the cells. The proposed method was tested on 100 fluorescence microscopic cell images, and the average true positive rate (TPR) is 98.13% and the average false positive rate (FPR) is 4.47%, respectively. The preliminary results showed the feasibility and efficiency of the proposed method.

Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

CERN Document Server

Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

2004-01-01

Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

Leveraging multiple datasets for deep leaf counting

OpenAIRE

Dobrescu, Andrei; Giuffrida, Mario Valerio; Tsaftaris, Sotirios A

2017-01-01

The number of leaves a plant has is one of the key traits (phenotypes) describing its development and growth. Here, we propose an automated, deep learning based approach for counting leaves in model rosette plants. While state-of-the-art results on leaf counting with deep learning methods have recently been reported, they obtain the count as a result of leaf segmentation and thus require per-leaf (instance) segmentation to train the models (a rather strong annotation). Instead, our method tre...

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

Design and development of a silicon-segmented detector for 2D dose measurements in radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Menichelli, David [Department of Clinical Phisiopathology, University of Florence, v.le Morgagni, 85-50134 Florence (Italy); INFN, Florence division, Via G. Sansone 1, 50019 Sesto Fiorentino (Italy)], E-mail: david.menichelli@cern.ch; Bruzzi, Mara [Department of Energetics, University of Florence, via S. Marta, 3-50139 Florence (Italy); INFN, Florence division, Via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Bucciolini, Marta; Talamonti, Cinzia; Casati, Marta; Marrazzo, Livia [Department of Clinical Phisiopathology, University of Florence, v.le Morgagni, 85-50134 Florence (Italy); INFN, Florence division, Via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Tesi, Mauro [Department of Energetics, University of Florence, via S. Marta, 3-50139 Florence (Italy); Piemonte, Claudio; Pozza, Alberto; Zorzi, Nicola [ITC-irst, via Sommarive, 18-38050 Trento (Italy); Brianzi, Mirko [INFN, Florence division, Via G. Sansone 1, 50019 Sesto Fiorentino (Italy); De Sio, Antonio [Department of Astronomy and Space Science, University of Florence, L.go E. Fermi, 2-50125 Florence (Italy)

2007-12-11

Modern radiotherapy treatment techniques, such as intensity Modulated Radiation Therapy (IMRT) and protontherapy, require detectors with specific features, usually not available in conventional dosimeters. IMRT dose measurements, for instance, must face non-uniform beam fluences as well as a time-varying dose rate. Two-dimensional detectors present a great interest for dosimetry in beams with steep dose gradients, but they must satisfy a number of requirements and, in particular, they must exhibit high spatial resolution. With the aim of developing a dosimetric system adequate for 2D pre-treatment dose verifications, we designed a modular dosimetric device based on a monolithic silicon-segmented module. State and results of this work in progress are described in this article. The first 441 pixels, 6.29x6.29 cm{sup 2} silicon module has been produced by ion implantation on a 50 {mu}m thick p-type epitaxial layer. This sensor has been connected to a discrete readout electronics performing current integration, and has been tested with satisfactory results. In the final configuration, nine silicon modules will be assembled together to cover an area close to 20x20 cm{sup 2} with 3969 channels. In this case, the readout electronics will be based on an ASIC capable to read 64 channels by performing current-to-frequency conversion.

Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

Science.gov (United States)

Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

2014-01-01

Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

Amorphous silicon ionizing particle detectors

Science.gov (United States)

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

Novel Photon-Counting Detectors for Free-Space Communication

Science.gov (United States)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

First results on the charge collection properties of segmented detectors made with p-type bulk silicon

International Nuclear Information System (INIS)

Casse, G.; Allport, P.P.; Bowcock, T.J.V.; Greenall, A.; Hanlon, M.; Jackson, J.N.

2002-01-01

Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 10 13 protons cm -2 . The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (∼6.4x6.4 cm 2 ) capacitively coupled 80 μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24 GeV/c protons to an integrated fluence of 3x10 14 cm -2 and kept for 7 days at 25 deg. C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing

Silicon Quantum Dots with Counted Antimony Donor Implants

Energy Technology Data Exchange (ETDEWEB)

Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

International Nuclear Information System (INIS)

Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

2016-01-01

Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ∼240 and 290 μm. (paper)

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

OPAL Example Segment of Silicon Tungsten Luminometer

CERN Multimedia

OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

CERNDxCTA counting mode chip

International Nuclear Information System (INIS)

Moraes, D.; Kaplon, J.; Nygard, E.

2008-01-01

This ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 μm CMOS technology. The circuit comprises 128 channels equipped with a transimpedance amplifier followed by a gain shaper stage with 21 ns peaking time, two discriminators and two 18-bit counters. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. The amplifier shows a linear sensitivity of 118 mV/fC and an equivalent noise charge of about 711 e - , for a detector capacitance of 5 pF. Complete evaluation of the circuit is presented using electronic pulses and pixel detectors

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru [St. Petersburg Polytechnic University (Russian Federation); Chernev, A. L. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation); Klyachkin, L. E. [St. Petersburg Polytechnic University (Russian Federation); Malyarenko, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Emel’yanov, A. K.; Dubina, M. V. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

2016-10-15

Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

Espina: A Tool for the Automated Segmentation and Counting of Synapses in Large Stacks of Electron Microscopy Images

Science.gov (United States)

Morales, Juan; Alonso-Nanclares, Lidia; Rodríguez, José-Rodrigo; DeFelipe, Javier; Rodríguez, Ángel; Merchán-Pérez, Ángel

2011-01-01

The synapses in the cerebral cortex can be classified into two main types, Gray's type I and type II, which correspond to asymmetric (mostly glutamatergic excitatory) and symmetric (inhibitory GABAergic) synapses, respectively. Hence, the quantification and identification of their different types and the proportions in which they are found, is extraordinarily important in terms of brain function. The ideal approach to calculate the number of synapses per unit volume is to analyze 3D samples reconstructed from serial sections. However, obtaining serial sections by transmission electron microscopy is an extremely time consuming and technically demanding task. Using focused ion beam/scanning electron microscope microscopy, we recently showed that virtually all synapses can be accurately identified as asymmetric or symmetric synapses when they are visualized, reconstructed, and quantified from large 3D tissue samples obtained in an automated manner. Nevertheless, the analysis, segmentation, and quantification of synapses is still a labor intensive procedure. Thus, novel solutions are currently necessary to deal with the large volume of data that is being generated by automated 3D electron microscopy. Accordingly, we have developed ESPINA, a software tool that performs the automated segmentation and counting of synapses in a reconstructed 3D volume of the cerebral cortex, and that greatly facilitates and accelerates these processes. PMID:21633491

ESPINA: a tool for the automated segmentation and counting of synapses in large stacks of electron microscopy images

Directory of Open Access Journals (Sweden)

Juan eMorales

2011-03-01

Full Text Available The synapses in the cerebral cortex can be classified into two main types, Gray’s type I and type II, which correspond to asymmetric (mostly glutamatergic excitatory and symmetric (inhibitory GABAergic synapses, respectively. Hence, the quantification and identification of their different types and the proportions in which they are found, is extraordinarily important in terms of brain function. The ideal approach to calculate the number of synapses per unit volume is to analyze three-dimensional samples reconstructed from serial sections. However, obtaining serial sections by transmission electron microscopy is an extremely time consuming and technically demanding task. Using FIB/SEM microscopy, we recently showed that virtually all synapses can be accurately identified as asymmetric or symmetric synapses when they are visualized, reconstructed and quantified from large three-dimensional tissue samples obtained in an automated manner. Nevertheless, the analysis, segmentation and quantification of synapses is still a labor intensive procedure. Thus, novel solutions are currently necessary to deal with the large volume of data that is being generated by automated 3D electron microscopy. Accordingly, we have developed ESPINA, a software tool that performs the automated segmentation and counting of synapses in a reconstructed 3D volume of the cerebral cortex, and that greatly facilitates and accelerates these processes.

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

Detectors for proton counting. Si-APD and scintillation detectors

International Nuclear Information System (INIS)

Kishimoto, Shunji

2008-01-01

Increased intensity of synchrotron radiation requests users to prepare photon pulse detectors having higher counting rates. As detectors for photon counting, silicon-avalanche photodiode (Si-APD) and scintillation detectors were chosen for the fifth series of detectors. Principle of photon detection by pulse and need of amplification function of the detector were described. Structure and working principle, high counting rate measurement system, bunch of electrons vs. counting rate, application example of NMR time spectroscopy measurement and comments for users were described for the Si-APD detector. Structure of scintillator and photomultiplier tube, characteristics of scintillator and performance of detector were shown for the NaI detector. Future development of photon pulse detectors was discussed. (T. Tanaka)

CERN_DxCTA counting mode chip

CERN Document Server

Moraes, D; Nygård, E

2008-01-01

This ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 μm CMOS technology. The circuit comprises 128 channels equipped with a transimpedance amplifier followed by a gain shaper stage with 21 ns peaking time, two discriminators and two 18-bit counters. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. The amplifier shows a linear sensitivity of 118 mV/fC and an equivalent noise charge of about 711 e−, for a detector capacitance of 5 pF. Complete evaluation of the circuit is presented using electronic pulses and pixel detectors.

Adaptive segmentation of nuclei in H&S stained tendon microscopy

Science.gov (United States)

Chuang, Bo-I.; Wu, Po-Ting; Hsu, Jian-Han; Jou, I.-Ming; Su, Fong-Chin; Sun, Yung-Nien

2015-12-01

Tendiopathy is a popular clinical issue in recent years. In most cases like trigger finger or tennis elbow, the pathology change can be observed under H and E stained tendon microscopy. However, the qualitative analysis is too subjective and thus the results heavily depend on the observers. We develop an automatic segmentation procedure which segments and counts the nuclei in H and E stained tendon microscopy fast and precisely. This procedure first determines the complexity of images and then segments the nuclei from the image. For the complex images, the proposed method adopts sampling-based thresholding to segment the nuclei. While for the simple images, the Laplacian-based thresholding is employed to re-segment the nuclei more accurately. In the experiments, the proposed method is compared with the experts outlined results. The nuclei number of proposed method is closed to the experts counted, and the processing time of proposed method is much faster than the experts'.

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

Science.gov (United States)

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar

2017-03-30

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2017-01-01

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Wheat Ear Detection in Plots by Segmenting Mobile Laser Scanner Data

Science.gov (United States)

Velumani, K.; Oude Elberink, S.; Yang, M. Y.; Baret, F.

2017-09-01

The use of Light Detection and Ranging (LiDAR) to study agricultural crop traits is becoming popular. Wheat plant traits such as crop height, biomass fractions and plant population are of interest to agronomists and biologists for the assessment of a genotype's performance in the environment. Among these performance indicators, plant population in the field is still widely estimated through manual counting which is a tedious and labour intensive task. The goal of this study is to explore the suitability of LiDAR observations to automate the counting process by the individual detection of wheat ears in the agricultural field. However, this is a challenging task owing to the random cropping pattern and noisy returns present in the point cloud. The goal is achieved by first segmenting the 3D point cloud followed by the classification of segments into ears and non-ears. In this study, two segmentation techniques: a) voxel-based segmentation and b) mean shift segmentation were adapted to suit the segmentation of plant point clouds. An ear classification strategy was developed to distinguish the ear segments from leaves and stems. Finally, the ears extracted by the automatic methods were compared with reference ear segments prepared by manual segmentation. Both the methods had an average detection rate of 85 %, aggregated over different flowering stages. The voxel-based approach performed well for late flowering stages (wheat crops aged 210 days or more) with a mean percentage accuracy of 94 % and takes less than 20 seconds to process 50,000 points with an average point density of 16  points/cm2. Meanwhile, the mean shift approach showed comparatively better counting accuracy of 95% for early flowering stage (crops aged below 225 days) and takes approximately 4 minutes to process 50,000 points.

Comparison of Six Different Silicones In Vitro for Application as Glaucoma Drainage Device

Directory of Open Access Journals (Sweden)

Claudia Windhövel

2018-02-01

Full Text Available Silicones are widely used in medical applications. In ophthalmology, glaucoma drainage devices are utilized if conservative therapies are not applicable or have failed. Long-term success of these devices is limited by failure to control intraocular pressure due to fibrous encapsulation. Therefore, different medical approved silicones were tested in vitro for cell adhesion, cell proliferation and viability of human Sclera (hSF and human Tenon fibroblasts (hTF. The silicones were analysed also depending on the sample preparation according to the manufacturer’s instructions. The surface quality was characterized with environmental scanning electron microscope (ESEM and water contact angle measurements. All silicones showed homogeneous smooth and hydrophobic surfaces. Cell adhesion was significantly reduced on all silicones compared to the negative control. Proliferation index and cell viability were not influenced much. For development of a new glaucoma drainage device, the silicones Silbione LSR 4330 and Silbione LSR 4350, in this study, with low cell counts for hTF and low proliferation indices for hSF, and silicone Silastic MDX4-4210, with low cell counts for hSF and low proliferation indices for hTF, have shown the best results in vitro. Due to the high cell adhesion shown on Silicone LSR 40, 40,026, this material is unsuitable.

Electrostatically defined silicon quantum dots with counted antimony donor implants

Energy Technology Data Exchange (ETDEWEB)

Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

2016-02-08

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Low-energy nuclear physics with high-segmentation silicon arrays

International Nuclear Information System (INIS)

Betts, R.R.; Univ. of Illinois, Chicago, IL

1994-01-01

A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

Track segment synthesis method for NTA film

International Nuclear Information System (INIS)

Kumazawa, Shigeru

1980-03-01

A method is presented for synthesizing track segments extracted from a gray-level digital picture of NTA film in automatic counting system. In order to detect each track in an arbitrary direction, even if it has some gaps, as a set of the track segments, the method links extracted segments along the track, in succession, to the linked track segments, according to whether each extracted segment bears a similarity of direction to the track or not and whether it is connected with the linked track segments or not. In the case of a large digital picture, the method is applied to each subpicture, which is a strip of the picture, and then concatenates subsets of track segments linked at each subpicture as a set of track segments belonging to a track. The method was applied to detecting tracks in various directions over the eight 364 x 40-pixel subpictures with the gray scale of 127/pixel (picture element) of the microphotograph of NTA film. It was proved to be able to synthesize track segments correctly for every track in the picture. (author)

Scintillation counter, segmented shield

International Nuclear Information System (INIS)

Olson, R.E.; Thumim, A.D.

1975-01-01

A scintillation counter, particularly for counting gamma ray photons, includes a massive lead radiation shield surrounding a sample-receiving zone. The shield is disassembleable into a plurality of segments to allow facile installation and removal of a photomultiplier tube assembly, the segments being so constructed as to prevent straight-line access of external radiation through the shield into radiation-responsive areas. Provisions are made for accurately aligning the photomultiplier tube with respect to one or more sample-transmitting bores extending through the shield to the sample receiving zone. A sample elevator, used in transporting samples into the zone, is designed to provide a maximum gamma-receiving aspect to maximize the gamma detecting efficiency. (U.S.)

Multifractal-based nuclei segmentation in fish images.

Science.gov (United States)

Reljin, Nikola; Slavkovic-Ilic, Marijeta; Tapia, Coya; Cihoric, Nikola; Stankovic, Srdjan

2017-09-01

The method for nuclei segmentation in fluorescence in-situ hybridization (FISH) images, based on the inverse multifractal analysis (IMFA) is proposed. From the blue channel of the FISH image in RGB format, the matrix of Holder exponents, with one-by-one correspondence with the image pixels, is determined first. The following semi-automatic procedure is proposed: initial nuclei segmentation is performed automatically from the matrix of Holder exponents by applying predefined hard thresholding; then the user evaluates the result and is able to refine the segmentation by changing the threshold, if necessary. After successful nuclei segmentation, the HER2 (human epidermal growth factor receptor 2) scoring can be determined in usual way: by counting red and green dots within segmented nuclei, and finding their ratio. The IMFA segmentation method is tested over 100 clinical cases, evaluated by skilled pathologist. Testing results show that the new method has advantages compared to already reported methods.

Development of real time personal neutron dosimeter with two silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Nakamura, T.; Tsujimura, N. [Tohoku Univ., Cyclotron and Radioisotope Center, Aoba, Aramaki, Aoba-ku (Japan); Yamano, T. [Tokyo Factory, Fuji Electric Co. Ltd., Tokyo (Japan)

1992-07-01

We developed a real time personal neutron dosimeter by using two types of silicon p-n junction detectors, thermal neutron sensor and fast neutron sensor. The thermal neutron sensor which is {sup 10}B doped n-type silicon with a polyethylene radiator mainly counts neutrons of energy front thermal to I MeV, and the fast neutron sensor which is p-type silicon with a polyethylene radiator is sensitive to neutrons above I MeV. The neutron sensitivity measurements revealed that the dosimeter has a rather flat response for dose equivalent from thermal to 15 MeV, excluding a drop from 50 keV to I MeV. In order to get conversion factor from counts to dose equivalent as accurately as possible, we performed the field test of the dosimeter calibration in several neutron-generating fields. By introducing the two-group dose estimation method, this dosimeter can give the neutron dose equivalent within about 50% errors. (author)

CERN{sub D}xCTA counting mode chip

Energy Technology Data Exchange (ETDEWEB)

Moraes, D. [CERN, CH-1211 Geneva 23 (Switzerland)], E-mail: danielle.moraes@cern.ch; Kaplon, J. [CERN, CH-1211 Geneva 23 (Switzerland); Nygard, E. [Interon AS, Asker, Norway and DX-ray Inc., Northridge, CA (United States)

2008-06-11

This ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 {mu}m CMOS technology. The circuit comprises 128 channels equipped with a transimpedance amplifier followed by a gain shaper stage with 21 ns peaking time, two discriminators and two 18-bit counters. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. The amplifier shows a linear sensitivity of 118 mV/fC and an equivalent noise charge of about 711 e{sup -}, for a detector capacitance of 5 pF. Complete evaluation of the circuit is presented using electronic pulses and pixel detectors.

Current automated 3D cell detection methods are not a suitable replacement for manual stereologic cell counting

Directory of Open Access Journals (Sweden)

Christoph eSchmitz

2014-05-01

Full Text Available Stereologic cell counting has had a major impact on the field of neuroscience. A major bottleneck in stereologic cell counting is that the user must manually decide whether or not each cell is counted according to three-dimensional (3D stereologic counting rules by visual inspection within hundreds of microscopic fields-of-view per investigated brain or brain region. Reliance on visual inspection forces stereologic cell counting to be very labor-intensive and time-consuming, and is the main reason why biased, non-stereologic two-dimensional (2D cell counting approaches have remained in widespread use. We present an evaluation of the performance of modern automated cell detection and segmentation algorithms as a potential alternative to the manual approach in stereologic cell counting. The image data used in this study were 3D microscopic images of thick brain tissue sections prepared with a variety of commonly used nuclear and cytoplasmic stains. The evaluation compared the numbers and locations of cells identified unambiguously and counted exhaustively by an expert observer with those found by three automated 3D cell detection algorithms: nuclei segmentation from the FARSIGHT toolkit, nuclei segmentation by 3D multiple level set methods, and the 3D object counter plug-in for ImageJ. Of these methods, FARSIGHT performed best, with true-positive detection rates between 38–99% and false-positive rates from 3.6–82%. The results demonstrate that the current automated methods suffer from lower detection rates and higher false-positive rates than are acceptable for obtaining valid estimates of cell numbers. Thus, at present, stereologic cell counting with manual decision for object inclusion according to unbiased stereologic counting rules remains the only adequate method for unbiased cell quantification in histologic tissue sections.

Novel detectors for silicon based microdosimetry, their concepts and applications

Science.gov (United States)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Multiple-Event, Single-Photon Counting Imaging Sensor

Science.gov (United States)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Aphid Identification and Counting Based on Smartphone and Machine Vision

Directory of Open Access Journals (Sweden)

Suo Xuesong

2017-01-01

Full Text Available Exact enumeration of aphids before the aphids outbreak can provide basis for precision spray. This paper designs counting software that can be run on smartphones for real-time enumeration of aphids. As a first step of the method used in this paper, images of the yellow sticky board that is aiming to catch insects are segmented from complex background by using GrabCut method; then the images will be normalized by perspective transformation method. The second step is the pretreatment on the images; images of aphids will be segmented by using OSTU threshold method after the effect of random illumination is eliminated by single image difference method. The last step of the method is aphids’ recognition and counting according to area feature of aphids after extracting contours of aphids by contour detection method. At last, the result of the experiment proves that the effect of random illumination can be effectively eliminated by using single image difference method. The counting accuracy in greenhouse is above 95%, while it can reach 92.5% outside. Thus, it can be seen that the counting software designed in this paper can realize exact enumeration of aphids under complicated illumination which can be used widely. The design method proposed in this paper can provide basis for precision spray according to its effective detection insects.

Use of silicon microstrip detectors in medical diagnostic x-rays

International Nuclear Information System (INIS)

Cabal Rodriguez, Ana Ester

2004-11-01

This work presents the development and characterization of a single photon counting system based on silicon microstrip detectors, used in High Energy Physics experiments, and on low noise multichannel readout electronics. The thesis evaluates the feasibility of dual energy X-ray imaging with silicon microstrip detectors to be applied on medical diagnosis. Dual energy mammographic and angiographic experimental tests have been performed using the developed counting systems proto types, properly phantoms and quasi-monochromatic X ray beams, obtained on a compact dichromatic source based on a conventional X-ray tube and a mosaic crystal. A Monte Carlo simulation of the performance of the experimental setup for dual X-ray imaging has also been carried out using MCNP-4C transport code. We obtained good agreement between MCNP results and the experimental data. (Author)

Silicon nanowire transistors

CERN Document Server

Bindal, Ahmet

2016-01-01

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

Spectra of fast neutrons using a lithiated glass film on silicon

International Nuclear Information System (INIS)

Wallace, Steven; Stephan, Andrew C.; Womble, Phillip C.; Begtrup, Gavi; Dai Sheng

2003-01-01

Experimental results of a neutron detector manufactured by coating a silicon charged particle detector with a film of lithiated glass are presented. The silicon surface barrier detector (SBD) responds to the 6 Li(n, alpha)triton reaction products generated in the thin film of lithiated glass entering the SBD. Neutron spectral information is present in the pulse height spectrum. An energy response is seen that clearly shows that neutrons from a Pu-Be source and from a deuterium-tritium (D-T) pulsed neutron generator can be differentiated and counted above a gamma background. The significant result is that the fissile content within a container can be measured using a pulsed D-T neutron generator using the neutrons that are counted in the interval between the pulses

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.

2018-01-02

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2018-01-01

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Effects of alveolar bone displacement with segmental osteotomy: micro-CT and histomorphometric analysis in rats

Directory of Open Access Journals (Sweden)

Taegun KIM

Full Text Available Abstract The purpose of this study was to evaluate the effects of segmental osteotomy on the blood vessels and osteoclasts in rats using micro-computed tomography (micro-CT and histomorphometric analysis. After segmental osteotomy was performed around the maxillary first molars of 36 male Sprague-Dawley rats (n = 72, the samples were divided into a control group (no displacement, 0.5 D group (0.5 mm buccal displacement and 1.0 D group (1.0 mm buccal displacement (n = 24/group. At 1, 2, 4 and 8 weeks after surgery, changes in the blood vessel volume were investigated using micro-CT with perfusion of radiopaque silicone rubber. Tartrate-resistant acid phosphatase (TRAP staining was used for histomorphometric analysis. Two-way repeated measures analysis of variance (rmANOVA was performed to compare the volume of blood vessels and number of TRAP-positive osteoclasts among the groups. Regarding blood vessel volume, the displacement groups had no significant effects, while the time points had significant effects (p = 0.014. The blood vessel volume at 1 week was significantly smaller than that at 2, 4, and 8 weeks (p = 0.004, p = 0.026, and p = 0.005, respectively. Regarding TRAP cell count, the displacement groups had no significant effects, while the time points had significant effects (p < 0.001. The number of TRAP-positive osteoclasts at 8 weeks was significantly smaller than that at 1, 2, and 4 weeks (p < 0.001, p < 0.001, and p = 0.002, respectively, and the count at 4 weeks was smaller than that at 1 week (p = 0.011. Therefore, a regional osteoclast-related acceleratory phenomenon was maintained until 4 weeks after surgery.

Limitations on energy resolution of segmented silicon detectors

Science.gov (United States)

Wiącek, P.; Chudyba, M.; Fiutowski, T.; Dąbrowski, W.

2018-04-01

In the paper experimental study of charge division effects and energy resolution of X-ray silicon pad detectors are presented. The measurements of electrical parameters, capacitances and leakage currents, for six different layouts of pad arrays are reported. The X-ray spectra have been measured using a custom developed dedicated low noise front-end electronics. The spectra measured for six different detector layouts have been analysed in detail with particular emphasis on quantitative evaluation of charge division effects. Main components of the energy resolution due to Fano fluctuations, electronic noise, and charge division, have been estimated for six different sensor layouts. General recommendations regarding optimisation of pad sensor layout for achieving best possible energy resolution have been formulated.

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

Science.gov (United States)

Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

War, traffic and iatrogenic injuries of D3 duodenal segment

Directory of Open Access Journals (Sweden)

Ignjatović Dragan

2005-01-01

Full Text Available Background. Injuries of the duodenum at the level of aortomesenteric clamp (segment D3 are with a high incidence of death due to the development of fistula and peritonitis. In three successfully managed cases, we applied the biliary surgery method. Case reports. All three cases were with the injuries of D3 duodenal segment. The first patient suffered from the blast perforation of duodenum at the level of the aortomesenteric clamp which occurred at the 7th day after the injury. The second patient suffered from the duodenal injury caused in a traffic accident. The third patient suffered from an iatrogenic injury at the beginning of D3 duodenal segment inflicted during ureterolithotomy. The described surgical procedure included basically the suture to narrow the site of the injury, then lateroterminal anastomosis with the Roux-en-Y jejunal flexure and, finally, the placement of a silicone prosthesis starting from the duodenum through the site of injury and the Roux-en-Y out. Octreotide and the total parenteral nutrition were administered to the patients postoperatively. Conclusion. The use of the releasing silicone prosthesis in all three patients provided the repair of the site of the injury with anastomosed Reux-en-Y jejunum.

Binomial distribution of Poisson statistics and tracks overlapping probability to estimate total tracks count with low uncertainty

International Nuclear Information System (INIS)

Khayat, Omid; Afarideh, Hossein; Mohammadnia, Meisam

2015-01-01

In the solid state nuclear track detectors of chemically etched type, nuclear tracks with center-to-center neighborhood of distance shorter than two times the radius of tracks will emerge as overlapping tracks. Track overlapping in this type of detectors causes tracks count losses and it becomes rather severe in high track densities. Therefore, tracks counting in this condition should include a correction factor for count losses of different tracks overlapping orders since a number of overlapping tracks may be counted as one track. Another aspect of the problem is the cases where imaging the whole area of the detector and counting all tracks are not possible. In these conditions a statistical generalization method is desired to be applicable in counting a segmented area of the detector and the results can be generalized to the whole surface of the detector. Also there is a challenge in counting the tracks in densely overlapped tracks because not sufficient geometrical or contextual information are available. It this paper we present a statistical counting method which gives the user a relation between the tracks overlapping probabilities on a segmented area of the detector surface and the total number of tracks. To apply the proposed method one can estimate the total number of tracks on a solid state detector of arbitrary shape and dimensions by approximating the tracks averaged area, whole detector surface area and some orders of tracks overlapping probabilities. It will be shown that this method is applicable in high and ultra high density tracks images and the count loss error can be enervated using a statistical generalization approach. - Highlights: • A correction factor for count losses of different tracks overlapping orders. • For the cases imaging the whole area of the detector is not possible. • Presenting a statistical generalization method for segmented areas. • Giving a relation between the tracks overlapping probabilities and the total tracks

A 500-MHz x-ray counting system with a silicon avalanche photodiode

International Nuclear Information System (INIS)

Kishimoto, Shunji

2009-01-01

In the present measurements using a Si-APD X-ray detector and a 500-MHz counting system, the maximum output rate of 3.3x10 8 s -1 was achieved for 8-keV X-rays in beamline BL-14A of the Photon Factory. A small Si-APD of 4-pF electric capacity was used as the detector device in order to output a pulse of a width shorter than 2 ns on the baseline. For processing the fast pulses, the discriminator and the scaler having a throughput of >500 MHz, were prepared. Since the acceleration frequency at the PF ring was 500.1 MHz and the empty-bunch spacing was 12/312 bunches per circumference, the expected maximum rate was 4.8x10 8s-1 according to the counting model for a pulsed photon source. The reason why the present system did not reach the expected value was the baseline shift at the amplifier outputs. The rise of +0.2 V was observed at a discriminator output of 3.3x10 8 s -1 , while the pulse height was lower than 0.2 V. The baseline shift was caused by an AC coupling circuit in the amplifier. If a DC coupling circuit can be used for the amplifier, instead of the AC coupling circuit, or an active adjustment to compensate the baseline shift is installed, the counting system will show an ideal response. Although the present system including NIM modules was not so compact, we would like to develop a new fast-counting circuit for a Si-APD array detector of more than 100 channels of small pixels, in near future. (author)

Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

International Nuclear Information System (INIS)

Loudon, A.Y.

2002-01-01

Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

An Automatic Indirect Immunofluorescence Cell Segmentation System

Directory of Open Access Journals (Sweden)

Yung-Kuan Chan

2014-01-01

Full Text Available Indirect immunofluorescence (IIF with HEp-2 cells has been used for the detection of antinuclear autoantibodies (ANA in systemic autoimmune diseases. The ANA testing allows us to scan a broad range of autoantibody entities and to describe them by distinct fluorescence patterns. Automatic inspection for fluorescence patterns in an IIF image can assist physicians, without relevant experience, in making correct diagnosis. How to segment the cells from an IIF image is essential in developing an automatic inspection system for ANA testing. This paper focuses on the cell detection and segmentation; an efficient method is proposed for automatically detecting the cells with fluorescence pattern in an IIF image. Cell culture is a process in which cells grow under control. Cell counting technology plays an important role in measuring the cell density in a culture tank. Moreover, assessing medium suitability, determining population doubling times, and monitoring cell growth in cultures all require a means of quantifying cell population. The proposed method also can be used to count the cells from an image taken under a fluorescence microscope.

Naturally occurring 32 Si and low-background silicon dark matter detectors

Energy Technology Data Exchange (ETDEWEB)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

Science.gov (United States)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Tunable, antibacterial activity of silicone polyether surfactants.

Science.gov (United States)

Khan, Madiha F; Zepeda-Velazquez, Laura; Brook, Michael A

2015-08-01

Silicone surfactants are used in a variety of applications, however, limited data is available on the relationship between surfactant structure and biological activity. A series of seven nonionic, silicone polyether surfactants with known structures was tested for in vitro antibacterial activity against Escherichia coli BL21. The compounds varied in their hydrophobic head, comprised of branched silicone structures with 3-10 siloxane linkages and, in two cases, phenyl substitution, and hydrophilic tail of 8-44 poly(ethylene glycol) units. The surfactants were tested at three concentrations: below, at, and above their Critical Micelle Concentrations (CMC) against 5 concentrations of E. coli BL21 in a three-step assay comprised of a 14-24h turbidometric screen, a live-dead stain and viable colony counts. The bacterial concentration had little effect on antibacterial activity. For most of the surfactants, antibacterial activity was higher at concentrations above the CMC. Surfactants with smaller silicone head groups had as much as 4 times the bioactivity of surfactants with larger groups, with the smallest hydrophobe exhibiting potency equivalent to sodium dodecyl sulfate (SDS). Smaller PEG chains were similarly associated with higher potency. These data link lower micelle stability and enhanced permeability of smaller silicone head groups to antibacterial activity. The results demonstrate that simple manipulation of nonionic silicone polyether structure leads to significant changes in antibacterial activity. Copyright © 2015 Elsevier B.V. All rights reserved.

Time-correlated single-photon counting study of multiple photoluminescence lifetime components of silicon nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Diamare, D., E-mail: d.diamare@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Wojdak, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Lettieri, S. [Institute for Superconductors and Innovative Materials, National Council of Research (CNR-SPIN), Via Cintia 80126, Naples (Italy); Department of Physical Sciences, University of Naples “Federico II”, Via Cintia 80126, Naples (Italy); Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom)

2013-04-15

We report time-resolved photoluminescence measurements of thin films of silica containing silicon nanoclusters (Si NCs), produced by PECVD and annealed at temperatures between 700 °C and 1150 °C. While the near infrared emission of Si NCs has long been studied, visible light emission has only recently attracted interest due to its very short decay times and its recently-reported redshift with decreasing NCs size. We analyse the PL decay dynamics in the range 450–700 nm with picosecond time resolution using Time Correlated Single Photon Counting. In the resultant multi-exponential decays two dominant components can clearly be distinguished: a very short component, in the range of hundreds of picoseconds, and a nanosecond component. In this wavelength range we do not detect the microsecond component generally associated with excitonic recombination. We associate the nanosecond component to defect relaxation: it decreases in intensity in the sample annealed at higher temperature, suggesting that the contribution from defects decreases with increasing temperature. The origin of the very fast PL component (ps time region) is also discussed. We show that it is consistent with the Auger recombination times of multiple excitons. Further work needs to be done in order to assess the contribution of the Auger-controlled recombinations to the defect-assisted mechanism of photoluminescence. -- Highlights: ► We report time-resolved PL measurements of Si-Ncs embedded in SiO{sub 2} matrix. ► Net decrease of PL with increasing the annealing temperature has been observed. ► Lifetime distribution analysis revealed a multiexponential decay with ns and ps components. ► Ps components are consistent with the lifetime range of the Auger recombination times. ► No evidence for a fast direct transition at the Brillouin zone centre.

Dark noise rates in irradiated silicon photomultiplier arrays

Energy Technology Data Exchange (ETDEWEB)

Bachmann, Sebastian; Comerma, Albert; Gerick, David; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Kecke, Matthieu; Leverington, Blake; Mazorra de Cos, Jose; Mitzel, Dominik; Neuner, Max; Uwer, Ulrich [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: LHCb-Collaboration

2016-07-01

The planned downstream tracking system - the Scintillating Fibre Tracker - for the LHCb upgrade uses silicon photomultiplier (SiPM) arrays of 128 channels to read out mats made of 250 μm diameter scintillating fibres. In the LHCb environment the neutron flux degrades the silicon detectors to the edge of an acceptable performance in terms of DCR. Studies have shown that the dark count rate (DCR) of the SiPMs increases linearly with the neutron flux. Towards the end of the designed lifetime of the experiment the DCR per SiPM channel operated at T = -40 C is expected to reach a few MHz after partial annealing. To reduce the impact of the DCR - while at the same time provide efficient hit reconstruction - a clustering algorithm is developed to separate signal from noise. A brief introduction into the custom designed read-out ASIC and the cluster algorithm are presented along with the studies of the dark count cluster rate dependency on the neutron flux, the DCR per channel and the effects of the applied signal thresholds for the clustering algorithm.

The effect of bevacizumab for anterior segment neovascularization after silicone oil removal in eyes with previous vitreoretinal surgery.

Science.gov (United States)

Batman, C; Ozdamar, Y

2010-07-01

To report the outcomes of the use of intracameral bevacizumab for iris neovascularization occurring after silicone oil (SO) removal in eyes undergoing vitreoretinal surgery (VRS). This study included 12 eyes that had iris neovascularization after SO removal. The clinical outcomes of 12 eyes after intravitreal bevacizumab injection were reviewed. There were eight men and four women with an average age of 41.58+/-12.68 years. All eyes had VRS for various vitreoretinal diseases. After the mean follow-up period of 9.7+/-5.3 months, SO removal was performed. Then, the patients were followed for more than 2 months and detailed retinal examinations and intraocular pressure (IOP) were normal during this period, but rubeosis iridis (RI) developed. RI was treated with 1 dose of 1.25 mg bevacizumab into the anterior chamber. After a mean follow-up period of 4.8+/-2.2 months, the regression of iris neovacularization was detected and IOP was below 21 mmHg in all eyes. Anterior segment neovascularization (ASNV) may develop through various mechanisms in patients with VRS after SO removal, and anterior chamber injection of bevacizumab may lead to regression of ASNV.

Stereological estimate of the total number of neurons in spinal segment D9 of the red-eared turtle

DEFF Research Database (Denmark)

Walløe, Solveig; Nissen, Ulla Vig; Berg, Rune W

2011-01-01

The red-eared turtle is an important animal model for investigating the neural activity in the spinal circuit that generates motor behavior. However, basic anatomical features, including the number of neurons in the spinal segments involved, are unknown. In the present study, we estimate the total...... number of neurons in segment D9 of the spinal cord in the red-eared turtle (Trachemys scripta elegans) using stereological cell counting methods. In transverse spinal cord sections stained with modified Giemsa, motoneurons (MNs), interneurons (INs), and non-neuronal cells were distinguished according...... to location and morphology. Each cell type was then counted separately using an optical disector with the cell nucleus as counting item. The number of cells in segment D9 was as follows (mean ± SE): MNs, 2049 ± 74; INs, 16,135 ± 316; non-neuronal cells, 47,504 ± 478 (n = 6). These results provide the first...

Photon-counting monolithic avalanche photodiode arrays for the super collider

International Nuclear Information System (INIS)

Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

1994-01-01

In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

Formation of nanosize poly(p-phenylene vinylene) in porous silicon substrate

International Nuclear Information System (INIS)

Le Rendu, P.; Nguyen, T.P.; Cheah, K.; Joubert, P.

2003-01-01

We report the results of optical investigations in porous silicon (PS)/poly(p-phenylene vinylene) (PPV) systems obtained by filling the pores of silicon wafers with polymer. By scanning electron microscopy (SEM), IR, and Raman spectroscopy, we observed that the porous silicon layer was thoroughly filled by the polymer with no significant change in the structure of the materials. This suggests that there is no interaction between the components. On the other hand, the photoluminescence (PL) spectra of the devices investigated at different temperatures (from 11 to 290 K) showed that both materials are active at low temperatures. Porous silicon has a band located at 398 nm while PPV has two bands at 528 and 570 nm. As the temperature increases, the PL intensity of porous silicon decreases and that PPV is blue shifted. A new band emerging at 473 nm may indicate an energy transfer from the porous silicon to PPV, involving short segments of the polymer. The band of PPV located at 515 nm becomes more dominant and indicates that the nanosize polymer films are formed in the pores of the silicon layer, in agreement with the results obtained by SEM, IR, and Raman analyses

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

CERN Document Server

Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

2015-01-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

Extending the dynamic range of silicon photomultipliers without increasing pixel count

International Nuclear Information System (INIS)

Johnson, Kurtis F.

2010-01-01

A silicon photomultiplier, sometimes called 'multipixel photon counter', which we here refer to as a 'SiPM', is a photo-sensitive device built from an avalanche photodiode array of pixels on a common silicon substrate, such that it can detect single photon events. The dimensions of a pixel may vary from 20 to 100 μm and their density can be greater than 1000 per square millimeter. Each pixel in a SiPM operates in Geiger mode and is coupled to the output by a quenching resistor. Although each pixel operates in digital mode, the SiPM is an analog device because all the pixels are read in parallel, making it possible to generate signals within a dynamic range from a single photon to a large number of photons, ultimately limited by the number of pixels on the chip. In this note we describe a simple and general method of increasing the dynamic range of a SiPM beyond that one may naively assume from the shape of the cumulative distribution function of the SiPM response to the average number of photons per pixel. We show that by rendering the incoming flux of photons to be non-uniform in a prescribed manner, a significant increase in dynamic range is achievable. Such re-distribution of the incoming flux may be accomplished with simple, non-focusing lenses, prisms, interference films, mirrors or attenuating films. Almost any optically non-inert interceding device can increase the dynamic range of the SiPM.

Radon Daughters Background Reduction in Alpha Particles Counting System

International Nuclear Information System (INIS)

Dadon, S. S.; Pelled, O.; Orion, I.

2014-01-01

The ABPC method is using a serially occurring events of the beta decay of the 214Bi fallow by alpha decay of the 214Po that take place almost simultaneously to detect the Pseudo Coincidence Event (PCE) from the RDP, and to subtract them from the gross alpha counts. 267 This work showed that it is possible to improve the efficiency of RDP background reduction, including subtracting the 218Po contribution by using the ABPC method based on a single solid state silicon PIPS detector. False counts percentage obtained at the output of the PCE circuit were smaller than 0.1%. The results show that the PCE circuit was not influenced by non RDP alpha emitters. The PCE system did not reduce the non PCE of the 218Po. After 20 minutes the 218Po was strongly decayed, and its contribution became negligible. In order to overcome this disadvantage, a mathematical matching calculations for the 214Po and the 218Po decay equations were employed, and a constant ratio of the APo214(0) / APo218(0) was obtained. This ratio can be used to estimate the count rate of the 218Po at the first 20 minutes, and to subtract it from the total count rate in order to obtain correct RDP reduction

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Science.gov (United States)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Recognition of Wheat Spike from Field Based Phenotype Platform Using Multi-Sensor Fusion and Improved Maximum Entropy Segmentation Algorithms

Directory of Open Access Journals (Sweden)

Chengquan Zhou

2018-02-01

Full Text Available To obtain an accurate count of wheat spikes, which is crucial for estimating yield, this paper proposes a new algorithm that uses computer vision to achieve this goal from an image. First, a home-built semi-autonomous multi-sensor field-based phenotype platform (FPP is used to obtain orthographic images of wheat plots at the filling stage. The data acquisition system of the FPP provides high-definition RGB images and multispectral images of the corresponding quadrats. Then, the high-definition panchromatic images are obtained by fusion of three channels of RGB. The Gram–Schmidt fusion algorithm is then used to fuse these multispectral and panchromatic images, thereby improving the color identification degree of the targets. Next, the maximum entropy segmentation method is used to do the coarse-segmentation. The threshold of this method is determined by a firefly algorithm based on chaos theory (FACT, and then a morphological filter is used to de-noise the coarse-segmentation results. Finally, morphological reconstruction theory is applied to segment the adhesive part of the de-noised image and realize the fine-segmentation of the image. The computer-generated counting results for the wheat plots, using independent regional statistical function in Matlab R2017b software, are then compared with field measurements which indicate that the proposed method provides a more accurate count of wheat spikes when compared with other traditional fusion and segmentation methods mentioned in this paper.

Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space

Science.gov (United States)

Prochzaka, Ivan; Kodat, Jan; Blazej, Josef; Sun, Xiaoli (Editor)

2015-01-01

We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.

Energy Calibration of a Silicon-Strip Detector for Photon-Counting Spectral CT by Direct Usage of the X-ray Tube Spectrum

Science.gov (United States)

Liu, Xuejin; Chen, Han; Bornefalk, Hans; Danielsson, Mats; Karlsson, Staffan; Persson, Mats; Xu, Cheng; Huber, Ben

2015-02-01

The variation among energy thresholds in a multibin detector for photon-counting spectral CT can lead to ring artefacts in the reconstructed images. Calibration of the energy thresholds can be used to achieve homogeneous threshold settings or to develop compensation methods to reduce the artefacts. We have developed an energy-calibration method for the different comparator thresholds employed in a photon-counting silicon-strip detector. In our case, this corresponds to specifying the linear relation between the threshold positions in units of mV and the actual deposited photon energies in units of keV. This relation is determined by gain and offset values that differ for different detector channels due to variations in the manufacturing process. Typically, the calibration is accomplished by correlating the peak positions of obtained pulse-height spectra to known photon energies, e.g. with the aid of mono-energetic x rays from synchrotron radiation, radioactive isotopes or fluorescence materials. Instead of mono-energetic x rays, the calibration method presented in this paper makes use of a broad x-ray spectrum provided by commercial x-ray tubes. Gain and offset as the calibration parameters are obtained by a regression analysis that adjusts a simulated spectrum of deposited energies to a measured pulse-height spectrum. Besides the basic photon interactions such as Rayleigh scattering, Compton scattering and photo-electric absorption, the simulation takes into account the effect of pulse pileup, charge sharing and the electronic noise of the detector channels. We verify the method for different detector channels with the aid of a table-top setup, where we find the uncertainty of the keV-value of a calibrated threshold to be between 0.1 and 0.2 keV.

Quantitative Compton suppression spectrometry at elevated counting rates

International Nuclear Information System (INIS)

Westphal, G.P.; Joestl, K.; Schroeder, P.; Lauster, R.; Hausch, E.

1999-01-01

For quantitative Compton suppression spectrometry the decrease of coincidence efficiency with counting rate should be made negligible to avoid a virtual increase of relative peak areas of coincident isomeric transitions with counting rate. To that aim, a separate amplifier and discriminator has been used for each of the eight segments of the active shield of a new well-type Compton suppression spectrometer, together with an optimized, minimum dead-time design of the anticoincidence logic circuitry. Chance coincidence losses in the Compton suppression spectrometer are corrected instrumentally by comparing the chance coincidence rate to the counting rate of the germanium detector in a pulse-counting Busy circuit (G.P. Westphal, J. Rad. Chem. 179 (1994) 55) which is combined with the spectrometer's LFC counting loss correction system. The normally not observable chance coincidence rate is reconstructed from the rates of germanium detector and scintillation detector in an auxiliary coincidence unit, after the destruction of true coincidence by delaying one of the coincidence partners. Quantitative system response has been tested in two-source measurements with a fixed reference source of 60 Co of 14 kc/s, and various samples of 137 Cs, up to aggregate counting rates of 180 kc/s for the well-type detector, and more than 1400 kc/s for the BGO shield. In these measurements, the net peak areas of the 1173.3 keV line of 60 Co remained constant at typical values of 37 000 with and 95 000 without Compton suppression, with maximum deviations from the average of less than 1.5%

Elevated leukocyte count and adverse hospital events in patients with acute coronary syndromes: findings from the Global Registry of Acute Coronary Events (GRACE).

Science.gov (United States)

Furman, Mark I; Gore, Joel M; Anderson, Fredrick A; Budaj, Andrzej; Goodman, Shaun G; Avezum, Avaro; López-Sendón, José; Klein, Werner; Mukherjee, Debabrata; Eagle, Kim A; Dabbous, Omar H; Goldberg, Robert J

2004-01-01

To examine the association between elevated leukocyte count and hospital mortality and heart failure in patients enrolled in the multinational, observational Global Registry of Acute Coronary Events (GRACE). Elevated leukocyte count is associated with adverse hospital outcomes in patients presenting with acute myocardial infarction (AMI). The association of this prognostic factor with hospital mortality and heart failure in patients with other acute coronary syndromes (ACS) is unclear. We examined the association between admission leukocyte count and hospital mortality and heart failure in 8269 patients presenting with an ACS. This association was examined separately in patients with ST-segment elevation AMI, non-ST-segment elevation AMI, and unstable angina. Leukocyte count was divided into 4 mutually exclusive groups (Q): Q1 12,000. Multiple logistic regression analysis was performed to examine the association between elevated leukocyte count and hospital events while accounting for the simultaneous effect of several potentially confounding variables. Increasing leukocyte count was significantly associated with hospital death (adjusted odds ratio [OR] 2.8, 95% CI 2.1-3.6 for Q4 compared to Q2 [normal range]) and heart failure (OR 2.7, 95% CI 2.2-3.4) for patients presenting with ACS. This association was seen in patients with ST-segment elevation AMI (OR for hospital death 3.2, 95% CI 2.1-4.7; OR for heart failure 2.4, 95% CI 1.8-3.3), non-ST-segment elevation AMI (OR for hospital death 1.9, 95% CI 1.2-3.0; OR for heart failure 1.7, 95% CI 1.1-2.5), or unstable angina (OR for hospital death 2.8, 95% CI 1.4-5.5; OR for heart failure 2.0, 95% CI 0.9-4.4). In men and women of all ages with the spectrum of ACS, initial leukocyte count is an independent predictor of hospital death and the development of heart failure.

Design of segmented thermoelectric generator based on cost-effective and light-weight thermoelectric alloys

International Nuclear Information System (INIS)

Kim, Hee Seok; Kikuchi, Keiko; Itoh, Takashi; Iida, Tsutomu; Taya, Minoru

2014-01-01

Highlights: • Segmented thermoelectric (TE) module operating at 500 °C for combustion engine system. • Si based light-weight TE generator increases the specific power density [W/kg]. • Study of contact resistance at the bonding interfaces maximizing output power. • Accurate agreement of the theoretical predictions with experimental results. - Abstract: A segmented thermoelectric (TE) generator was designed with higher temperature segments composed of n-type Mg 2 Si and p-type higher manganese silicide (HMS) and lower temperature segments composed of n- and p-type Bi–Te based compounds. Since magnesium and silicon based TE alloys have low densities, they produce a TE module with a high specific power density that is suitable for airborne applications. A two-pair segmented π-shaped TE generator was assembled with low contact resistance materials across bonding interfaces. The peak specific power density of this generator was measured at 42.9 W/kg under a 498 °C temperature difference, which has a good agreement with analytical predictions

Cherenkov luminescence measurements with digital silicon photomultipliers: a feasibility study

Energy Technology Data Exchange (ETDEWEB)

Ciarrocchi, Esther; Belcari, Nicola; Guerra, Alberto Del [Department of Physics, University of Pisa, Pisa (Italy); INFN, section of Pisa, Pisa (Italy); Cherry, Simon R. [Department of Biomedical Engineering, University of California, Davis, CA (United States); Lehnert, Adrienne; Hunter, William C. J.; McDougald, Wendy; Miyaoka, Robert S.; Kinahan, Paul E. [Department of Radiology, University of Washington, Seattle, WA (United States)

2015-11-16

A feasibility study was done to assess the capability of digital silicon photomultipliers to measure the Cherenkov luminescence emitted by a β source. Cherenkov luminescence imaging (CLI) is possible with a charge coupled device (CCD) based technology, but a stand-alone technique for quantitative activity measurements based on Cherenkov luminescence has not yet been developed. Silicon photomultipliers (SiPMs) are photon counting devices with a fast impulse response and can potentially be used to quantify β-emitting radiotracer distributions by CLI. In this study, a Philips digital photon counting (PDPC) silicon photomultiplier detector was evaluated for measuring Cherenkov luminescence. The PDPC detector is a matrix of avalanche photodiodes, which were read one at a time in a dark count map (DCM) measurement mode (much like a CCD). This reduces the device active area but allows the information from a single avalanche photodiode to be preserved, which is not possible with analog SiPMs. An algorithm to reject the noisiest photodiodes and to correct the measured count rate for the dark current was developed. The results show that, in DCM mode and at (10–13) °C, the PDPC has a dynamic response to different levels of Cherenkov luminescence emitted by a β source and transmitted through an opaque medium. This suggests the potential for this approach to provide quantitative activity measurements. Interestingly, the potential use of the PDPC in DCM mode for direct imaging of Cherenkov luminescence, as a opposed to a scalar measurement device, was also apparent. We showed that a PDPC tile in DCM mode is able to detect and image a β source through its Cherenkov radiation emission. The detector’s dynamic response to different levels of radiation suggests its potential quantitative capabilities, and the DCM mode allows imaging with a better spatial resolution than the conventional event-triggered mode. Finally, the same acquisition procedure and data processing could

Cherenkov luminescence measurements with digital silicon photomultipliers: a feasibility study

International Nuclear Information System (INIS)

Ciarrocchi, Esther; Belcari, Nicola; Guerra, Alberto Del; Cherry, Simon R.; Lehnert, Adrienne; Hunter, William C. J.; McDougald, Wendy; Miyaoka, Robert S.; Kinahan, Paul E.

2015-01-01

A feasibility study was done to assess the capability of digital silicon photomultipliers to measure the Cherenkov luminescence emitted by a β source. Cherenkov luminescence imaging (CLI) is possible with a charge coupled device (CCD) based technology, but a stand-alone technique for quantitative activity measurements based on Cherenkov luminescence has not yet been developed. Silicon photomultipliers (SiPMs) are photon counting devices with a fast impulse response and can potentially be used to quantify β-emitting radiotracer distributions by CLI. In this study, a Philips digital photon counting (PDPC) silicon photomultiplier detector was evaluated for measuring Cherenkov luminescence. The PDPC detector is a matrix of avalanche photodiodes, which were read one at a time in a dark count map (DCM) measurement mode (much like a CCD). This reduces the device active area but allows the information from a single avalanche photodiode to be preserved, which is not possible with analog SiPMs. An algorithm to reject the noisiest photodiodes and to correct the measured count rate for the dark current was developed. The results show that, in DCM mode and at (10–13) °C, the PDPC has a dynamic response to different levels of Cherenkov luminescence emitted by a β source and transmitted through an opaque medium. This suggests the potential for this approach to provide quantitative activity measurements. Interestingly, the potential use of the PDPC in DCM mode for direct imaging of Cherenkov luminescence, as a opposed to a scalar measurement device, was also apparent. We showed that a PDPC tile in DCM mode is able to detect and image a β source through its Cherenkov radiation emission. The detector’s dynamic response to different levels of radiation suggests its potential quantitative capabilities, and the DCM mode allows imaging with a better spatial resolution than the conventional event-triggered mode. Finally, the same acquisition procedure and data processing could

The solenoidal detector collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems (STS) will be fundamental components of the tracking systems for both planned major SSC experiments. The STS is physically a small part of the central tracking system and the calorimeter of the detector being proposed by the Solenoidal Detector Collaboration (SDC). Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. The STS will consist of silicon microstrip detectors and possibly silicon pixel detectors. The other two components are an outer barrel tracker, which will consist of straw tubes or scintillating fibers; and an outer intermediate angle tracker, which will consist of gas microstrips. The components are designed to work as an integrated system. Each componenet has specific strengths, but is individually incapable of providing the overall performance required by the physics goals of the SSC. The large particle fluxes, the short times between beam crossing, the high channel count, and the required very high position measurement accuracy pose challenging problems that must be solved. Furthermore, to avoid degrading the measurements, the solutions must be achieved using only a minimal amount of material. An additional constraint is that only low-Z materials are allowed. If that were not difficlut enough, the solutions must also be affordable

CHARACTERIZATION AND AUTOMATIC COUNTING OF F.I.S.H. SIGNALS IN 3-D TISSUE IMAGES

Directory of Open Access Journals (Sweden)

Umesh PS Adiga

2011-05-01

Full Text Available The evaluation of malignancy-related features often helps to determine the prognoses for patients with carcinomas. One technique, which is becoming increasingly important for assessing such prognostic features is that of Fluorescence in situ Hybridization (FISH. By counting the number of FISH signals in a stack of 2- D images of a tumor (which together constitute the 3-D image volume, it is possible to determine whether there has been any loss or gain of the target DNA sequences and thereby evaluate the stage of the disease. However, visual counting of the FISH signals in this way is a tedious, fatiguing and time-consuming task. Therefore, we have developed an automated system for the quantitative evaluation of FISH signals. We present and discuss the implementation of an image processing module that segments, characterizes and counts the FISH signals in 3-D images of thick prostate tumor tissue specimens. Possible errors in the automatic counting of signals are listed and ways to circumvent these errors are described. We define a feature vector for a FISH signal and describe how we have used the weighted feature vector to segment specific signals from noise artifacts. In addition, we present a method, which allows overlapping FISH signals to be distinguished by fitting a local Gaussian model around the intensity profile and studying the feature vector of each model. Our complete image processing module overcomes the problems of manual counting of FISH signals in 3-D images of tumor specimens, thereby providing improved diagnostic and prognostic capability in qualitative diagnostic pathology.

Segmented attenuation correction using artificial neural networks in positron tomography

International Nuclear Information System (INIS)

Yu, S.K.; Nahmias, C.

1996-01-01

The measured attenuation correction technique is widely used in cardiac positron tomographic studies. However, the success of this technique is limited because of insufficient counting statistics achievable in practical transmission scan times, and of the scattered radiation in transmission measurement which leads to an underestimation of the attenuation coefficients. In this work, a segmented attenuation correction technique has been developed that uses artificial neural networks. The technique has been validated in phantoms and verified in human studies. The results indicate that attenuation coefficients measured in the segmented transmission image are accurate and reproducible. Activity concentrations measured in the reconstructed emission image can also be recovered accurately using this new technique. The accuracy of the technique is subject independent and insensitive to scatter contamination in the transmission data. This technique has the potential of reducing the transmission scan time, and satisfactory results are obtained if the transmission data contain about 400 000 true counts per plane. It can predict accurately the value of any attenuation coefficient in the range from air to water in a transmission image with or without scatter correction. (author)

Direct photon-counting scintillation detector readout using an SSPM

International Nuclear Information System (INIS)

Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

2007-01-01

Gamma-ray detector technologies, capable of providing adequate energy information, use photomultiplier tubes (PMTs) or silicon avalanche photodiodes to detect the light pulse from a scintillation crystal. A new approach to detect the light from scintillation materials is to use an array of small photon counting detectors, or a 'detector-on-a-chip' based on a novel 'Solid-state Photomultiplier' (SSPM) concept. A CMOS SSPM coupled to a scintillation crystal uses an array of CMOS Geiger photodiode (GPD) pixels to collect light and produce a signal proportional to the energy of the radiation. Each pixel acts as a binary photon detector, but the summed output is an analog representation of the total photon intensity. We have successfully fabricated arrays of GPD pixels in a CMOS environment, which makes possible the production of miniaturized arrays integrated with the detector electronics in a small silicon chip. This detector technology allows for a substantial cost reduction while preserving the energy resolution needed for radiological measurements. In this work, we compare designs for the SSPM detector. One pixel design achieves maximum detection efficiency (DE) for 632-nm photons approaching 30% with a room temperature dark count rate (DCR) of less than 1 kHz for a 30-μm-diameter pixel. We characterize after pulsing and optical cross talk and discuss their effects on the performance of the SSPM. For 30-μm diameter, passively quenched CMOS GPD pixels, modeling suggests that a pixel spacing of approximately 90 μm optimizes the SSPM performance with respect to DE and cross talk

Segmentation par logique floue pour l'estimation du nombre de ...

African Journals Online (AJOL)

Our approach is based on the use of principal component analysis (PCA), followed by the application of fuzzy logic to the first principal component images as segmentation method of red blood cells. It allowed us to define a gradual membership of red blood cells to a class, thus facilitating their counting. The results give rise ...

Photon counting microstrip X-ray detectors with GaAs sensors

Science.gov (United States)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

Silicon carbide devices: more reliability for transmission and distribution systems; Dispositivos de SiC: mais confiabilidade para sistemas de transmissao e distribuicao

Energy Technology Data Exchange (ETDEWEB)

Basset, Roger; Ballad, John [Areva T and D Tecnology Centre (United Kingdom)

2006-05-15

The silicon carbide power semiconductors will represent an essential role in relation to electrical nets in the future. Counting with higher voltage levels, more rapid commutations and allowing higher temperatures then the current silicon semiconductors, they will result in power electronic equipment with lower dissipation and smaller amount of components, becoming more compacts and reliable.

Counted Sb donors in Si quantum dots

Science.gov (United States)

Singh, Meenakshi; Pacheco, Jose; Bielejec, Edward; Perry, Daniel; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

2015-03-01

Deterministic control over the location and number of donors is critical for donor spin qubits in semiconductor based quantum computing. We have developed techniques using a focused ion beam and a diode detector integrated next to a silicon MOS single electron transistor to gain such control. With the diode detector operating in linear mode, the numbers of ions implanted have been counted and single ion implants have been detected. Poisson statistics in the number of ions implanted have been observed. Transport measurements performed on samples with counted number of implants have been performed and regular coulomb blockade and charge offsets observed. The capacitances to various gates are found to be in agreement with QCAD simulations for an electrostatically defined dot. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

The inclusion of RPC only segments in the Barrel Muon Track Finder

CERN Document Server

CMS Collaboration

2018-01-01

On November 3, 2017 during the LHC fill 6360 and from the run number 306121 RPC-only segments were enable to trigger. In this document we show the impact of the RPC-only segments in the Barrel Muon Track Finder efficiency performance. The efficiency measurement was done with Tag and Probe cut and count following the Muon POG working point recommendations (tight ID and Particle Flow isolation requirements more details can be found in https://cds.cern.ch/record/2054113). The used dataset was ZMuMu corresponding to each period.

EXCALIBUR: a small-pixel photon counting area detector for coherent X-ray diffraction - Front-end design, fabrication and characterisation

Science.gov (United States)

Marchal, J.; Horswell, I.; Willis, B.; Plackett, R.; Gimenez, E. N.; Spiers, J.; Ballard, D.; Booker, P.; Thompson, J. A.; Gibbons, P.; Burge, S. R.; Nicholls, T.; Lipp, J.; Tartoni, N.

2013-03-01

Coherent X-ray diffraction experiments on synchrotron X-ray beamlines require detectors with high spatial resolution and large detection area. The read-out chip developed by the MEDIPIX3 collaboration offers a small pixel size of 55 microns resulting in a very high spatial resolution when coupled to a direct X-ray conversion segmented silicon sensor. MEDIPIX3 assemblies present also the advantages of hybrid pixel detectors working in single photon counting mode: noiseless imaging, large dynamic range, extremely high frame rate. The EXCALIBUR detector is under development for the X-ray Coherence and Imaging Beamline I13 of the Diamond Light Source. This new detector consists of three modules, each with 16 MEDIPIX3 chips which can be read-out at 100 frames per second in continuous mode or 1000 frames per second in burst mode. In each module, the sensor is a large single silicon die covering 2 rows of 8 individual MEDIPIX3 read-out chips and provides a continuous active detection region within a module. Each module includes 1 million solder bumps connecting the 55 microns pixels of the silicon sensor to the 55 microns pixels of the 16 MEDIPIX3 read-out chips. The detection area of the 3-module EXCALIBUR detector is 115 mm × 100 mm with a small 6.8 mm wide inactive region between modules. Each detector module is connected to 2 FPGA read-out boards via a flexi-rigid circuit to allow a fully parallel read-out of the 16 MEDIPIX3 chips. The 6 FPGA read-out boards used in the EXCALIBUR detector are interfaced to 6 computing nodes via 10Gbit/s fibre-optic links to maintain the very high frame-rate capability. The standard suite of EPICS control software is used to operate the detector and to integrate it with the Diamond Light Source beamline software environment. This article describes the design, fabrication and characterisation of the MEDIPIX3-based modules composing the EXCALIBUR detector.

EXCALIBUR: a small-pixel photon counting area detector for coherent X-ray diffraction - Front-end design, fabrication and characterisation

International Nuclear Information System (INIS)

Marchal, J; Horswell, I; Willis, B; Plackett, R; Gimenez, E N; Spiers, J; Thompson, J A; Gibbons, P; Tartoni, N; Ballard, D; Booker, P; Burge, S R; Nicholls, T; Lipp, J

2013-01-01

Coherent X-ray diffraction experiments on synchrotron X-ray beamlines require detectors with high spatial resolution and large detection area. The read-out chip developed by the MEDIPIX3 collaboration offers a small pixel size of 55 microns resulting in a very high spatial resolution when coupled to a direct X-ray conversion segmented silicon sensor. MEDIPIX3 assemblies present also the advantages of hybrid pixel detectors working in single photon counting mode: noiseless imaging, large dynamic range, extremely high frame rate. The EXCALIBUR detector is under development for the X-ray Coherence and Imaging Beamline I13 of the Diamond Light Source. This new detector consists of three modules, each with 16 MEDIPIX3 chips which can be read-out at 100 frames per second in continuous mode or 1000 frames per second in burst mode. In each module, the sensor is a large single silicon die covering 2 rows of 8 individual MEDIPIX3 read-out chips and provides a continuous active detection region within a module. Each module includes 1 million solder bumps connecting the 55 microns pixels of the silicon sensor to the 55 microns pixels of the 16 MEDIPIX3 read-out chips. The detection area of the 3-module EXCALIBUR detector is 115 mm × 100 mm with a small 6.8 mm wide inactive region between modules. Each detector module is connected to 2 FPGA read-out boards via a flexi-rigid circuit to allow a fully parallel read-out of the 16 MEDIPIX3 chips. The 6 FPGA read-out boards used in the EXCALIBUR detector are interfaced to 6 computing nodes via 10Gbit/s fibre-optic links to maintain the very high frame-rate capability. The standard suite of EPICS control software is used to operate the detector and to integrate it with the Diamond Light Source beamline software environment. This article describes the design, fabrication and characterisation of the MEDIPIX3-based modules composing the EXCALIBUR detector.

Development of a high-count-rate neutron detector with position sensitivity and high efficiency

International Nuclear Information System (INIS)

Nelson, R.; Sandoval, J.

1996-01-01

While the neutron scattering community is bombarded with hints of new technologies that may deliver detectors with high-count-rate capability, high efficiency, gamma-ray insensitivity, and high resolution across large areas, only the time-tested, gas-filled 3 He and scintillation detectors are in widespread use. Future spallation sources with higher fluxes simply must exploit some of the advanced detector schemes that are as yet unproved as production systems. Technologies indicating promise as neutron detectors include pixel arrays of amorphous silicon, silicon microstrips, microstrips with gas, and new scintillation materials. This project sought to study the competing neutron detector technologies and determine which or what combination will lead to a production detector system well suited for use at a high-intensity neutron scattering source

Automatic segmentation of dynamic neuroreceptor single-photon emission tomography images using fuzzy clustering

International Nuclear Information System (INIS)

Acton, P.D.; Pilowsky, L.S.; Kung, H.F.; Ell, P.J.

1999-01-01

The segmentation of medical images is one of the most important steps in the analysis and quantification of imaging data. However, partial volume artefacts make accurate tissue boundary definition difficult, particularly for images with lower resolution commonly used in nuclear medicine. In single-photon emission tomography (SPET) neuroreceptor studies, areas of specific binding are usually delineated by manually drawing regions of interest (ROIs), a time-consuming and subjective process. This paper applies the technique of fuzzy c-means clustering (FCM) to automatically segment dynamic neuroreceptor SPET images. Fuzzy clustering was tested using a realistic, computer-generated, dynamic SPET phantom derived from segmenting an MR image of an anthropomorphic brain phantom. Also, the utility of applying FCM to real clinical data was assessed by comparison against conventional ROI analysis of iodine-123 iodobenzamide (IBZM) binding to dopamine D 2 /D 3 receptors in the brains of humans. In addition, a further test of the methodology was assessed by applying FCM segmentation to [ 123 I]IDAM images (5-iodo-2-[[2-2-[(dimethylamino)methyl]phenyl]thio] benzyl alcohol) of serotonin transporters in non-human primates. In the simulated dynamic SPET phantom, over a wide range of counts and ratios of specific binding to background, FCM correlated very strongly with the true counts (correlation coefficient r 2 >0.99, P 123 I]IBZM data comparable with manual ROI analysis, with the binding ratios derived from both methods significantly correlated (r 2 =0.83, P<0.0001). Fuzzy clustering is a powerful tool for the automatic, unsupervised segmentation of dynamic neuroreceptor SPET images. Where other automated techniques fail completely, and manual ROI definition would be highly subjective, FCM is capable of segmenting noisy images in a robust and repeatable manner. (orig.)

Silicone-Based Triboelectric Nanogenerator for Water Wave Energy Harvesting.

Science.gov (United States)

Xiao, Tian Xiao; Jiang, Tao; Zhu, Jian Xiong; Liang, Xi; Xu, Liang; Shao, Jia Jia; Zhang, Chun Lei; Wang, Jie; Wang, Zhong Lin

2018-01-31

Triboelectric nanogenerator (TENG) has been proven to be efficient for harvesting water wave energy, which is one of the most promising renewable energy sources. In this work, a TENG with a silicone rubber/carbon black composite electrode was designed for converting the water wave energy into electricity. The silicone-based electrode with a soft texture provides a better contact with the dielectric film. Furthermore, a spring structure is introduced to transform low-frequency water wave motions into high-frequency vibrations. They together improve the output performance and efficiency of TENG. The output performances of TENGs are further enhanced by optimizing the triboelectric material pair and tribo-surface area. A spring-assisted TENG device with the segmented silicone rubber-based electrode structure was sealed into a waterproof box, which delivers a maximum power density of 2.40 W m -3 , as triggered by the water waves. The present work provides a new strategy for fabricating high-performance TENG devices by coupling flexible electrodes and spring structure for harvesting water wave energy.

Characterization of a prototype matrix of Silicon PhotoMultipliers

Energy Technology Data Exchange (ETDEWEB)

Dinu, N. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France)], E-mail: dinu@lal.in2p3.fr; Barrillon, P.; Bazin, C. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France); Belcari, N.; Bisogni, M.G. [Universita di Pisa, Dipartimento di Fisica ' E. Fermi' , 56127 Pisa (Italy); INFN, Sezione di Pisa, 56127 Pisa (Italy); Bondil-Blin, S. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France); Boscardin, M. [Fondazione Bruno Kessler (FBK-irst), 38050 Trento (Italy); Chaumat, V. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France); Collazuol, G. [Scuola Normale Superiore (SNS), 56127 Pisa (Italy); INFN, Sezione di Pisa, 56127 Pisa (Italy); De La Taille, C. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France); Del Guerra, A. [Universita di Pisa, Dipartimento di Fisica ' E. Fermi' , 56127 Pisa (Italy); INFN, Sezione di Pisa, 56127 Pisa (Italy); Llosa, G. [Universita di Pisa, Dipartimento di Fisica ' E. Fermi' , 56127 Pisa (Italy); Marcatili, S. [Universita di Pisa, Dipartimento di Fisica ' E. Fermi' , 56127 Pisa (Italy); INFN, Sezione di Pisa, 56127 Pisa (Italy); Melchiorri, M.; Piemonte, C. [Fondazione Bruno Kessler (FBK-irst), 38050 Trento (Italy); Puill, V. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France); Tarolli, A. [Fondazione Bruno Kessler (FBK-irst), 38050 Trento (Italy); Vagnucci, J.F. [Laboratory of Linear Accelerator (LAL), IN2P3-CNRS, 91898 Orsay (France); Zorzi, N. [Fondazione Bruno Kessler (FBK-irst), 38050 Trento (Italy)

2009-10-21

This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.

Characterization of a prototype matrix of Silicon PhotoMultipliers

International Nuclear Information System (INIS)

Dinu, N.; Barrillon, P.; Bazin, C.; Belcari, N.; Bisogni, M.G.; Bondil-Blin, S.; Boscardin, M.; Chaumat, V.; Collazuol, G.; De La Taille, C.; Del Guerra, A.; Llosa, G.; Marcatili, S.; Melchiorri, M.; Piemonte, C.; Puill, V.; Tarolli, A.; Vagnucci, J.F.; Zorzi, N.

2009-01-01

This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.

Automatic vehicle counting system for traffic monitoring

Science.gov (United States)

Crouzil, Alain; Khoudour, Louahdi; Valiere, Paul; Truong Cong, Dung Nghy

2016-09-01

The article is dedicated to the presentation of a vision-based system for road vehicle counting and classification. The system is able to achieve counting with a very good accuracy even in difficult scenarios linked to occlusions and/or presence of shadows. The principle of the system is to use already installed cameras in road networks without any additional calibration procedure. We propose a robust segmentation algorithm that detects foreground pixels corresponding to moving vehicles. First, the approach models each pixel of the background with an adaptive Gaussian distribution. This model is coupled with a motion detection procedure, which allows correctly location of moving vehicles in space and time. The nature of trials carried out, including peak periods and various vehicle types, leads to an increase of occlusions between cars and between cars and trucks. A specific method for severe occlusion detection, based on the notion of solidity, has been carried out and tested. Furthermore, the method developed in this work is capable of managing shadows with high resolution. The related algorithm has been tested and compared to a classical method. Experimental results based on four large datasets show that our method can count and classify vehicles in real time with a high level of performance (>98%) under different environmental situations, thus performing better than the conventional inductive loop detectors.

Modeling crosstalk in silicon photomultipliers

International Nuclear Information System (INIS)

Gallego, L; Rosado, J; Blanco, F; Arqueros, F

2013-01-01

Optical crosstalk seriously limits the photon-counting resolution of silicon photomultipliers. In this work, realistic analytical models to describe the crosstalk effects on the response of these photodetectors are presented and compared with experimental data. The proposed models are based on the hypothesis that each pixel of the array has a finite number of available neighboring pixels to excite via crosstalk. Dead-time effects and geometrical aspects of the propagation of crosstalk between neighbors are taken into account in the models for different neighborhood configurations. Simple expressions to account for crosstalk effects on the pulse-height spectrum as well as to evaluate the excess noise factor due to crosstalk are also given. Dedicated measurements were carried out under both dark-count conditions and pulsed illumination. Moreover, the influence of afterpulsing on the measured pulse-height spectrum was studied, and a measurement of the recovery time of pixels was reported. High-resolution pulse-height spectra were obtained by means of a detailed waveform analysis, and the results have been used to validate our crosstalk models.

Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

International Nuclear Information System (INIS)

Hyun, H.J.; Anderson, T.; Angelaszek, D.; Baek, S.J.; Copley, M.; Coutu, S.; Han, J.H.; Huh, H.G.; Hwang, Y.S.; Im, S.; Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J.; Kim, K.C.; Kwashnak, K.; Lee, J.; Lee, M.H.; Link, J.T.; Lutz, L.

2015-01-01

The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm 2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests

Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

Energy Technology Data Exchange (ETDEWEB)

Hyun, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Anderson, T. [Pennsylvania State University, University Park, PA 16802 (United States); Angelaszek, D. [University of Maryland, College Park, MD 20740 (United States); Baek, S.J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Copley, M. [University of Maryland, College Park, MD 20740 (United States); Coutu, S. [Pennsylvania State University, University Park, PA 16802 (United States); Han, J.H.; Huh, H.G. [University of Maryland, College Park, MD 20740 (United States); Hwang, Y.S. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Im, S. [Pennsylvania State University, University Park, PA 16802 (United States); Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kim, K.C.; Kwashnak, K. [University of Maryland, College Park, MD 20740 (United States); Lee, J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, M.H. [University of Maryland, College Park, MD 20740 (United States); Link, J.T. [NASA GSFC, Greenbelt, MD 20771 (United States); CRESST(USRA), Columbia, MD 21044 (United States); Lutz, L. [University of Maryland, College Park, MD 20740 (United States); and others

2015-07-01

The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm{sup 2} at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

Smart pile-up consideration for evaluation of high count rate EDS spectra

International Nuclear Information System (INIS)

Eggert, F; Anderhalt, R; Nicolosi, J; Elam, T

2012-01-01

This work describes a new pile-up consideration for the very high count rate spectra which are possible to acquire with silicon drift detector (SDD) technology. Pile-up effects are the major and still remaining challenge with the use of SDD for EDS in scanning electron microscopes (SEM) with ultra thin windows for soft X-ray detection. The ability to increase the count rates up to a factor of 100 compared with conventional Si(Li) detectors, comes with the problem that the pile-up recognition (pile-up rejection) in pulse processors is not able to improve by the same order of magnitude, just only with a factor of about 3. Therefore, it is common that spectra will show significant pile-up effects if count rates of more than 10000 counts per second (10 kcps) are used. These false counts affect both automatic qualitative analysis and quantitative evaluation of the spectra. The new idea is to use additional inputs for pile-up calculation to shift the applicability towards very high count rates of up to 200 kcps and more, which can be easily acquired with the SDD. The additional input is the 'known' (estimated) background distribution, calculated iteratively during all automated qualitative or quantitative evaluations. This additional knowledge gives the opportunity for self adjustment of the pile-up calculation parameters and avoids over-corrections which challenge the evaluation as well as the pile-up artefacts themselves. With the proposed method the pile-up correction is no longer a 'correction' but an integral part of all spectra evaluation steps. Examples for the application are given with evaluation of very high count rate spectra.

Electrochemically etched nanoporous silicon membrane for separation of biological molecules in mixture

Science.gov (United States)

Burham, Norhafizah; Azlan Hamzah, Azrul; Yunas, Jumril; Yeop Majlis, Burhanuddin

2017-07-01

This paper presents a technique for separating biological molecules in mixture using nanoporous silicon membrane. Nanopores were formed using electrochemical etching process (ECE) by etching a prefabricated silicon membrane in hydrofluoric acid (HF) and ethanol, and then directly bonding it with PDMS to form a complete filtration system for separating biological molecules. Tygon S3™ tubings were used as fluid interconnection between PDMS molds and silicon membrane during testing. Electrochemical etching parameters were manipulated to control pore structure and size. In this work, nanopores with sizes of less than 50 nm, embedded on top of columnar structures have been fabricated using high current densities and variable HF concentrations. Zinc oxide was diluted with deionized (DI) water and mixed with biological molecules and non-biological particles, namely protein standard, serum albumin and sodium chloride. Zinc oxide particles were trapped on the nanoporous silicon surface, while biological molecules of sizes up to 12 nm penetrated the nanoporous silicon membrane. The filtered particles were inspected using a Zetasizer Nano SP for particle size measurement and count. The Zetasizer Nano SP results revealed that more than 95% of the biological molecules in the mixture were filtered out by the nanoporous silicon membrane. The nanoporous silicon membrane fabricated in this work is integratable into bio-MEMS and Lab-on-Chip components to separate two or more types of biomolecules at once. The membrane is especially useful for the development of artificial kidney.

Progress in multi-element silicon detectors for synchrotron XRF applications

International Nuclear Information System (INIS)

Ludewigt, B.; Rossington, C.; Kipnis, I.; Krieger, B.

1995-10-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon and high purity germanium detectors for high count rate, low noise synchrotron x-ray fluorescence applications. We have been developing these types of detectors specifically for low noise synchrotron applications, such as extended x-ray absorption fine structure spectroscopy, microprobe x-ray fluorescence and total reflection x-ray fluorescence. The current version of the 192-element detector and integrated circuit preamplifier, cooled to -25 degrees C with a single-stage thermoelectric cooler, achieves an energy resolution of <200 eV full width of half maximum (FWHM) per channel (at 5.9 keV, 2 μs peaking time), and each detector element is designed to handle ∼20 kHz count rate. The detector system will soon be completed to 64 channels using new application specific integrated circuit (ASIC) amplifier chips, new CAMAC (Computer Automated Measurement and Control standard) analog-to-digital converters recently developed at Lawrence Berkeley National Laboratory (LBNL), CAMAC histogramming modules, and Macintosh-based data acquisition software. We report on the characteristics of this detector system, and the work in progress towards the next generation system

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

O tubo de silicone como dreno torácico em eqüinos The silicon tube when used as a thoracic drain in horses

Directory of Open Access Journals (Sweden)

Raquel Yvonne Arantes Baccarin

2002-10-01

Full Text Available O tórax agudo possui ocorrência comum em eqüinos, e é responsável por alta mortalidade. Diante disso, o aprimoramento dos meios de tratamento certamente contribuirá para o maior índice de sobrevivência desses animais. Para tanto, este estudo teve a finalidade de avaliar: a complacência, capacidade de drenagem e a radiopacidade de tubo de silicone quando utilizado como dreno torácico em eqüinos e, as possíveis alterações causadas nas variáveis fisiológicas, no hemograma e no líquido pleural. O tubo de silicone foi introduzido na cavidade pleural de 10 eqüinos hígidos através de trocarte, mediante sedação dos animais e anestesia local. Após introdução e posicionamento, o tubo foi conectado a equipo de infusão e tampado por torneira de três vias. Avalioaram-se as variáveis fisiológicas dos animais, analisaram-se o hemograma, o fibrinogênio plasmático e o líquido pleural durante 15 dias. Os dados obtidos foram confrontados estatisticamente pela análise de variância. Concluiu-se que o tubo de silicone permite drenagem satisfatória; mantém sua consistência inalterada na presença do líquido pleural; é radiopaco ao exame radiográfico e é passível de alterar sua complacência na presença de vácuo.The acute thorax syndrome is common in horses and has a high mortality rate. The development of more efficient treatment regimens will certainly account for an increased number of successful outcomes. The purpose of this research was to evaluate the silicon tube’s complacency, draining ability and radiopacity when used as a thoracic drain in horses. Changes in physiologic parameters, blood cell count and pleural fluid were also investigated. Ten horses of different breeds, body weight and age were used and the silicon tube was placed in the pleural cavity by means of a trocar, with the horse under sedation and local anesthesia. Following introduction and placement in the ventral portion of the cavity, the tube was

An Alternative to Chaid Segmentation Algorithm Based on Entropy.

Directory of Open Access Journals (Sweden)

María Purificación Galindo Villardón

2010-07-01

Full Text Available The CHAID (Chi-Squared Automatic Interaction Detection treebased segmentation technique has been found to be an effective approach for obtaining meaningful segments that are predictive of a K-category (nominal or ordinal criterion variable. CHAID was designed to detect, in an automatic way, the  nteraction between several categorical or ordinal predictors in explaining a categorical response, but, this may not be true when Simpson’s paradox is present. This is due to the fact that CHAID is a forward selection algorithm based on the marginal counts. In this paper we propose a backwards elimination algorithm that starts with the full set of predictors (or full tree and eliminates predictors progressively. The elimination procedure is based on Conditional Independence contrasts using the concept of entropy. The proposed procedure is compared to CHAID.

Multineuronal vectorization is more efficient than time-segmental vectorization for information extraction from neuronal activities in the inferior temporal cortex.

Science.gov (United States)

Kaneko, Hidekazu; Tamura, Hiroshi; Tate, Shunta; Kawashima, Takahiro; Suzuki, Shinya S; Fujita, Ichiro

2010-08-01

In order for patients with disabilities to control assistive devices with their own neural activity, multineuronal spike trains must be efficiently decoded because only limited computational resources can be used to generate prosthetic control signals in portable real-time applications. In this study, we compare the abilities of two vectorizing procedures (multineuronal and time-segmental) to extract information from spike trains during the same total neuron-seconds. In the multineuronal vectorizing procedure, we defined a response vector whose components represented the spike counts of one to five neurons. In the time-segmental vectorizing procedure, a response vector consisted of components representing a neuron's spike counts for one to five time-segment(s) of a response period of 1 s. Spike trains were recorded from neurons in the inferior temporal cortex of monkeys presented with visual stimuli. We examined whether the amount of information of the visual stimuli carried by these neurons differed between the two vectorizing procedures. The amount of information calculated with the multineuronal vectorizing procedure, but not the time-segmental vectorizing procedure, significantly increased with the dimensions of the response vector. We conclude that the multineuronal vectorizing procedure is superior to the time-segmental vectorizing procedure in efficiently extracting information from neuronal signals. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

A readout system for position sensitive measurements of X-ray using silicon strip detectors

CERN Document Server

Dabrowski, W; Grybos, P; Idzik, M; Kudlaty, J

2000-01-01

In this paper we describe the development of a readout system for X-ray measurements using silicon strip detectors. The limitation concerning the inherent spatial resolution of silicon strip detectors has been evaluated by Monte Carlo simulation and the results are discussed. The developed readout system is based on the binary readout architecture and consists of two ASICs: RX32 front-end chip comprising 32 channels of preamplifiers, shapers and discriminators, and COUNT32 counter chip comprising 32 20-bit asynchronous counters and the readout logic. This work focuses on the design and performance of the front-end chip. The RX32 chip has been optimised for a low detector capacitance, in the range of 1-3 pF, and high counting rate applications. It can be used with DC coupled detectors allowing the leakage current up to a few nA per strip. For the prototype chip manufactured in a CMOS process all basic parameters have been evaluated by electronic measurements. The noise below 140 el rms has been achieved for a ...

Microencapsulation of silicon cavities using a pulsed excimer laser

KAUST Repository

Sedky, Sherif M.

2012-06-07

This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the proposed technique uses short excimer laser pulses (24ns), focused onto an area of 23mm 2, to locally heat the top few microns of the substrate, while the bulk substrate remains near ambient temperature. The treatment can be applied to selected regions of the substrate, without the need for special surface treatments or a controlled environment. This work investigates the effect of varying the laser pulse energy from 400 mJ cm 2to 800 mJ cm 2, the pulse rate from 1Hz to 50Hz and the pulse count from 200 to 3000 pulses on sealing microfabricated cavities in silicon. An analytical model for the effect of holes on the surface temperature distribution is derived, which shows that much higher temperatures can be achieved by increasing the hole density. A mechanism for sealing the cavities is proposed, which indicates how complete sealing is feasible. © 2012 IOP Publishing Ltd.

Radiation Damage Studies of Silicon Photomultipliers

CERN Document Server

Bohn, P; Hazen, E.; Heering, A.; Rohlf, J.; Freeman, J.; Los, Sergey V.; Cascio, E.; Kuleshov, S.; Musienko, Y.; Piemonte, C.

2008-01-01

We report on the measurement of the radiation hardness of silicon photomultipliers (SiPMs) manufactured by Fondazione Bruno Kessler in Italy (1 mm$^2$ and 6.2 mm$^2$), Center of Perspective Technology and Apparatus in Russia (1 mm$^2$ and 4.4 mm$^2$), and Hamamatsu Corporation in Japan (1 mm$^2$). The SiPMs were irradiated using a beam of 212 MeV protons at Massachusetts General Hospital, receiving fluences of up to $3 \\times 10^{10}$ protons per cm$^2$ with the SiPMs at operating voltage. Leakage currents were read continuously during the irradiation. The delivery of the protons was paused periodically to record scope traces in response to calibrated light pulses to monitor the gains, photon detection efficiencies, and dark counts of the SiPMs. The leakage current and dark noise are found to increase with fluence. Te leakage current is found to be proportional to the mean square deviation of the noise distribution, indicating the dark counts are due to increased random individual pixel activation, while SiPM...

Developing population segments with different levels of complexity and primary health care needs: An analysis using health administrative data in British Columbia, Canada

Directory of Open Access Journals (Sweden)

Julia Langton

2017-04-01

We developed population segments designed to account for patient complexity and primary health care needs; as such, segments provide more information than traditional indices of morbidity burden based on counts of chronic conditions. These segments will be used to report information on the quality of primary care. We plan to include conduct validation studies using additional variables (e.g, socio-economic factors, level of vulnerability from patient surveys so that segments more accurately represent the level of complexity and patients’ primary health care needs.

Development of large area silicon semiconductor detectors for use in the current mode

CERN Document Server

Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

2002-01-01

Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

Development of Ultra-Fast Silicon Detectors for 4D tracking

Science.gov (United States)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Analysis of fold distributions of segmented clover detectors

International Nuclear Information System (INIS)

Bhattacharya, Pintu; Kshetri, Ritesh

2015-01-01

We have studied the effect of segmentation on the full energy energy deposition of a gamma-ray through the studies on fold distribution. The response of seven segmented TIGRESS detectors up to an energy of 8 MeV has been studied by utilizing standard sources of 152 Eu, 56,60 Co and a radioactive 11 Be beam with an energy of 16.5 MeV. Experiment was performed at the ISAC-II facility at TRIUMF, using a thick gold target. The β¯ decay of 11 Be (τ 1/2 = 13.81(8) sec) produces high energy gamma-rays up to 7974 keV. A 1 mm thick annular double-sided silicon detector of the BAMBINO detector, was mounted 19.4 mm downstream of the target position and used for detection of the electrons in coincidence with the gamma-rays from the seven TIGRESS detectors. The master trigger allowed data to be collected either in Ge singles mode or with a Ge-Si coincidence condition. Standard sources of 152 Eu and 56,60 Co were also used to obtain low energy data

Measurement of synchrotron radiation from the NBS SURF II using a silicon radiometer

International Nuclear Information System (INIS)

Schaefer, A.R.

1980-01-01

A project is described in which the synchrotron radiation output from the NBS storage ring known as SURF II, is measured using a well characterized silicon based radiometer. This device consists of a silicon photodiode coupled with two interference filters to restrict the spectral response to a finite and convenient spectral region for the measurement. Considerations required for the characterization of the radiometer will be discussed. The absolute radiant flux from the storage ring is also calculable from various machine parameters. A measurement of the number of circulating electrons will be derived from electron counting techniques at low levels. This will yield an important intercomparison between the synchrotron flux measurements determined in two entirely different ways. (orig.)

New silicon photodiodes for detection of the 1064nm wavelength radiation

Science.gov (United States)

Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

2016-12-01

In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

A Vision Chip for Color Segmentation and Pattern Matching

Directory of Open Access Journals (Sweden)

Ralph Etienne-Cummings

2003-06-01

Full Text Available A 128(H × 64(V × RGB CMOS imager is integrated with region-of-interest selection, RGB-to-HSI transformation, HSI-based pixel segmentation, (36bins × 12bits-HSI histogramming, and sum-of-absolute-difference (SAD template matching. Thirty-two learned color templates are stored and compared to each image. The chip captures the R, G, and B images using in-pixel storage before passing the pixel content to a multiplying digital-to-analog converter (DAC for white balancing. The DAC can also be used to pipe in images for a PC. The color processing uses a biologically inspired color opponent representation and an analog lookup table to determine the Hue (H of each pixel. Saturation (S is computed using a loser-take-all circuit. Intensity (I is given by the sum of the color components. A histogram of the segments of the image, constructed by counting the number of pixels falling into 36 Hue intervals of 10 degrees, is stored on a chip and compared against the histograms of new segments using SAD comparisons. We demonstrate color-based image segmentation and object recognition with this chip. Running at 30 fps, it uses 1 mW. To our knowledge, this is the first chip that integrates imaging, color segmentation, and color-based object recognition at the focal plane.

Spot counting on fluorescence in situ hybridization in suspension images using Gaussian mixture model

Science.gov (United States)

Liu, Sijia; Sa, Ruhan; Maguire, Orla; Minderman, Hans; Chaudhary, Vipin

2015-03-01

Cytogenetic abnormalities are important diagnostic and prognostic criteria for acute myeloid leukemia (AML). A flow cytometry-based imaging approach for FISH in suspension (FISH-IS) was established that enables the automated analysis of several log-magnitude higher number of cells compared to the microscopy-based approaches. The rotational positioning can occur leading to discordance between spot count. As a solution of counting error from overlapping spots, in this study, a Gaussian Mixture Model based classification method is proposed. The Akaike information criterion (AIC) and Bayesian information criterion (BIC) of GMM are used as global image features of this classification method. Via Random Forest classifier, the result shows that the proposed method is able to detect closely overlapping spots which cannot be separated by existing image segmentation based spot detection methods. The experiment results show that by the proposed method we can obtain a significant improvement in spot counting accuracy.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Compton suppression gamma-counting: The effect of count rate

Science.gov (United States)

Millard, H.T.

1984-01-01

Past research has shown that anti-coincidence shielded Ge(Li) spectrometers enhanced the signal-to-background ratios for gamma-photopeaks, which are situated on high Compton backgrounds. Ordinarily, an anti- or non-coincidence spectrum (A) and a coincidence spectrum (C) are collected simultaneously with these systems. To be useful in neutron activation analysis (NAA), the fractions of the photopeak counts routed to the two spectra must be constant from sample to sample to variations must be corrected quantitatively. Most Compton suppression counting has been done at low count rate, but in NAA applications, count rates may be much higher. To operate over the wider dynamic range, the effect of count rate on the ratio of the photopeak counts in the two spectra (A/C) was studied. It was found that as the count rate increases, A/C decreases for gammas not coincident with other gammas from the same decay. For gammas coincident with other gammas, A/C increases to a maximum and then decreases. These results suggest that calibration curves are required to correct photopeak areas so quantitative data can be obtained at higher count rates. ?? 1984.

A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

CERN Document Server

Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

2003-01-01

A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

EcoCount

Directory of Open Access Journals (Sweden)

Phillip P. Allen

2014-05-01

Full Text Available Techniques that analyze biological remains from sediment sequences for environmental reconstructions are well established and widely used. Yet, identifying, counting, and recording biological evidence such as pollen grains remain a highly skilled, demanding, and time-consuming task. Standard procedure requires the classification and recording of between 300 and 500 pollen grains from each representative sample. Recording the data from a pollen count requires significant effort and focused resources from the palynologist. However, when an adaptation to the recording procedure is utilized, efficiency and time economy improve. We describe EcoCount, which represents a development in environmental data recording procedure. EcoCount is a voice activated fully customizable digital count sheet that allows the investigator to continuously interact with a field of view during the data recording. Continuous viewing allows the palynologist the opportunity to remain engaged with the essential task, identification, for longer, making pollen counting more efficient and economical. EcoCount is a versatile software package that can be used to record a variety of environmental evidence and can be installed onto different computer platforms, making the adoption by users and laboratories simple and inexpensive. The user-friendly format of EcoCount allows any novice to be competent and functional in a very short time.

A Parallel Algorithm for the Counting of Ellipses Present in Conglomerates Using GPU

Directory of Open Access Journals (Sweden)

Reyes Yam-Uicab

2018-01-01

Full Text Available Detecting and counting elliptical objects are an interesting problem in digital image processing. There are real-world applications of this problem in various disciplines. Solving this problem is harder when there is occlusion among the elliptical objects, since in general these objects are considered as part of the bigger object (conglomerate. The solution to this problem focusses on the detection and segmentation of the precise number of occluded elliptical objects, while omitting all noninteresting objects. There are a variety of computational approximations that focus on this problem; however, such approximations are not accurate when there is occlusion. This paper presents an algorithm designed to solve this problem, specifically, to detect, segment, and count elliptical objects of a specific size when these are in occlusion with other objects within the conglomerate. Our algorithm deals with a time-consuming combinatorial process. To optimize the execution time of our algorithm, we implemented a parallel GPU version with CUDA-C, which experimentally improved the detection of occluded objects, as well as lowering processing times compared to the sequential version of the method. Comparative test results with another method featured in literature showed improved detection of objects in occlusion when using the proposed parallel method.

Segmentation: Identification of consumer segments

DEFF Research Database (Denmark)

Høg, Esben

2005-01-01

It is very common to categorise people, especially in the advertising business. Also traditional marketing theory has taken in consumer segments as a favorite topic. Segmentation is closely related to the broader concept of classification. From a historical point of view, classification has its...... origin in other sciences as for example biology, anthropology etc. From an economic point of view, it is called segmentation when specific scientific techniques are used to classify consumers to different characteristic groupings. What is the purpose of segmentation? For example, to be able to obtain...... a basic understanding of grouping people. Advertising agencies may use segmentation totarget advertisements, while food companies may usesegmentation to develop products to various groups of consumers. MAPP has for example investigated the positioning of fish in relation to other food products...

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

RBC count

Science.gov (United States)

... by kidney disease) RBC destruction ( hemolysis ) due to transfusion, blood vessel injury, or other cause Leukemia Malnutrition Bone ... slight risk any time the skin is broken) Alternative Names Erythrocyte count; Red blood cell count; Anemia - RBC count Images Blood test ...

CONTAMINATION OF ANTI-VEGF DRUGS FOR INTRAVITREAL INJECTION: How Do Repackaging and Newly Developed Syringes Affect the Amount of Silicone Oil Droplets and Protein Aggregates?

Science.gov (United States)

Schargus, Marc; Werner, Benjamin P; Geerling, Gerd; Winter, Gerhard

2017-08-21

The particle counts and the nature of particles of three different antivascular endothelial growth factor agents (VEGF) in different containers in a laboratory setting were compared. Original prefilled ranibizumab glass syringes, original vials with aflibercept, and repacked ready-to-use plastic syringes with bevacizumab from a compounding pharmacy and a compounding company (CC) were analyzed. Particle counts and size distributions were quantified by different particle characterization methods (nephelometry, light obscuration, Micro-Flow Imaging, nanotracking analysis, resonant mass measurement). Using high-performance size-exclusion chromatography (HP-SEC), levels of protein drug monomer and soluble aggregates were determined. Nearly all samples showed similar product quality. Light obscuration and Micro-Flow Imaging showed a 4-fold to 9-fold higher total particle count in compounding company bevacizumab (other samples up to 42,000 particles/mL). Nanotracking analysis revealed highest values for compounding company bevacizumab (6,375 million particles/mL). All containers showed similar amounts of silicone oil microdroplets. Ranibizumab showed lowest particle count of all tested agents with only one monomer peak in HP-SEC. Repackaged bevacizumab from different suppliers showed varying product quality. All three tested agents are available in similar quality regarding particulate purity and silicone oil microdroplet count. Repackaging can have a major impact on the quality.

Parallel and pipelined front-end for multi-element silicon detectors in scanning electron microscopy

International Nuclear Information System (INIS)

Boulin, C.; Epstein, A.

1992-01-01

This paper discusses a silicon quadrant detector (128 elements) implemented as an electron detector in a Scanning Transmission Electron Microscope. As the electron beam scans over the sample, electrons are counted during each pixel. The authors developed an ASIC for the multichannel counting system. The digital front-end carries out the readout of all elements, in four groups, and uses these data to compute linear combinations to generate up to eight simultaneous images. For the preprocessing the authors implemented a parallel and pipelined system. Dedicated software tools were developed to generate the programs for all the processors. These tools are transparently accessed by the user via a user friendly interface

Segmentation of touching mycobacterium tuberculosis from Ziehl-Neelsen stained sputum smear images

Science.gov (United States)

Xu, Chao; Zhou, Dongxiang; Liu, Yunhui

2015-12-01

Touching Mycobacterium tuberculosis objects in the Ziehl-Neelsen stained sputum smear images present different shapes and invisible boundaries in the adhesion areas, which increases the difficulty in objects recognition and counting. In this paper, we present a segmentation method of combining the hierarchy tree analysis with gradient vector flow snake to address this problem. The skeletons of the objects are used for structure analysis based on the hierarchy tree. The gradient vector flow snake is used to estimate the object edge. Experimental results show that the single objects composing the touching objects are successfully segmented by the proposed method. This work will improve the accuracy and practicability of the computer-aided diagnosis of tuberculosis.

The performance of silicon photomultipliers in Cherenkov TOF PET

International Nuclear Information System (INIS)

Dolenec, Rok; Korpar, Samo; Krizan, Peter; Pestotink, Rok

2015-01-01

In time-of-flight positron emission tomography (TOF PET) one of the main factors limiting the time resolution is the time evolution of the scintillation process. This can be avoided by using exclusively the Cherenkov light produced in a suitable material. Sub 100 ps FWHM timing has already been experimentally demonstrated but with a drawback of relatively low detection efficiency due to the photodetectors used. In this work silicon photomultipliers (SiPMs) are considered as a photodetector in Cherenkov TOF PET. The detection efficiency can be significantly improved by using SiPMs, however, at room temperature the SiPM dark counts introduce a significant source of fake coincidences. SiPM samples from different producers were tested in a simple back-to-back setup in combination with lead fluoride Cherenkov radiators. Results for coincidence timing, detection efficiency and effects of dark counts at different temperatures and SiPM overvoltages are presented.

Correlated Photon Pair Generation in Silicon Wire Waveguides at 1.5 μm

International Nuclear Information System (INIS)

Cheng Jie-Rong; Zhang Wei; Zhou Qiang; Feng Xue; Huang Yi-Dong; Peng Jiang-De

2010-01-01

Correlated photon pairs at 1.5μm are generated in a silicon wire waveguide (SWW) with a length of only 1.6mm. Experimental results show that the single-side count rates on both sides increase quadratically with pump light, indicating that photons are generated from the spontaneous four-wave mixing (SFWM) processes. The quantum correlation property of the generated photons is demonstrated by the ratio between coincident and accidental coincident count rates. The highest ratio measured at room temperature is to be about 19, showing that generated photon pairs have strong quantum correlation property and low noise. What is more, the wavelength correlation property of the coincident count is also measured to demonstrate the correlated photon pair generation. The experimental results demonstrate that SWWs have great potential in on-chip integrated low-noise correlated photon pair sources at 1.5 μm. (fundamental areas of phenomenology(including applications))

Characterization of actinide targets by low solid-angle alpha particle counting

CERN Document Server

Denecke, B; Pauwels, J; Robouch, P; Gilliam, D M; Hodge, P; Hutchinson, J M R; Nico, J S

1999-01-01

Actinide samples were characterized in an interlaboratory comparison between IRMM and NIST, including alpha-particle counting at defined low solid angle and counting in a 2 pi proportional gas counter. For this comparison, nine sup 2 sup 3 sup 3 UF sub 4 samples with high uniformity in the layer thickness were prepared at IRMM by deposition under vacuum. Polished silicon wafers were used as source substrates, and these were rotated during the deposition using a planetary rotation system. The estimated uncertainties for the defined low solid-angle methods were about 0.1% at both NIST and IRMM. The agreement of reported alpha-particle emission rates in the energy range 2.5-5.09 MeV was better than or equal to 0.02% for the defined solid-angle methods. When comparing total alpha-particle emission rates over the larger energy range 0-9 MeV (which includes all emissions from the daughter nuclides and the impurities), the agreement of the defined solid-angle methods was better than or equal to 0.05%. The 2 pi propo...

Determining the number of clusters for nuclei segmentation in breast cancer image

Science.gov (United States)

Fatichah, Chastine; Navastara, Dini Adni; Suciati, Nanik; Nuraini, Lubna

2017-02-01

Clustering is commonly technique for image segmentation, however determining an appropriate number of clusters is still challenging. Due to nuclei variation of size and shape in breast cancer image, an automatic determining number of clusters for segmenting the nuclei breast cancer is proposed. The phase of nuclei segmentation in breast cancer image are nuclei detection, touched nuclei detection, and touched nuclei separation. We use the Gram-Schmidt for nuclei cell detection, the geometry feature for touched nuclei detection, and combining of watershed and spatial k-Means clustering for separating the touched nuclei in breast cancer image. The spatial k-Means clustering is employed for separating the touched nuclei, however automatically determine the number of clusters is difficult due to the variation of size and shape of single cell breast cancer. To overcome this problem, first we apply watershed algorithm to separate the touched nuclei and then we calculate the distance among centroids in order to solve the over-segmentation. We merge two centroids that have the distance below threshold. And the new of number centroid as input to segment the nuclei cell using spatial k- Means algorithm. Experiment show that, the proposed scheme can improve the accuracy of nuclei cell counting.

Applanation tonometry in silicone hydrogel contact lens wearers.

Science.gov (United States)

Allen, R J; Dev Borman, A; Saleh, G M

2007-12-01

Previous studies have investigated intraocular pressure (IOP) measurements through conventional soft (hydrogel) therapeutic contact lenses, and have found that an accurate IOP can be recorded in normal eyes, and in eyes with abnormal anterior segments. The IOP measurement through soft contact lenses may be affected by the water content and centre thickness of the lens. Silicone hydrogel contact lenses are now being used as therapeutic contact lenses due to their high oxygen permeability. The purpose of this study is to investigate if IOP can be accurately measured in a subject wearing a silicone hydrogel contact lens. In a cohort study, the IOP was measured with a Goldmann applanation tonometer without a contact lens and then repeated with a hydrogel contact lens in situ. The IOP of 20 eyes of 10 volunteers with no ocular pathology was measured. The mean difference (+/-S.D.) found between IOP measurement with (mean 15.55+/-1.70 mmHg) and without (mean 16.05+/-1.90 mmHg) contact lens was found to be -0.5+/-0.89 mmHg. Statistical analysis was performed which revealed a correlation coefficient of 0.89. No significant statistical difference was found between the two groups with paired t-test (p=0.19). Accurate measurement of IOP by applanation tonometry can be achieved through a silicone hydrogel contact lens.

Evaluation of the charge-sharing effects on spot intensity in XRD setup using photon-counting pixel detectors

International Nuclear Information System (INIS)

Nilsson, H.-E.; Mattsson, C.G.; Norlin, B.; Froejdh, C.; Bethke, K.; Vries, R. de

2006-01-01

In this study, we examine how charge loss due to charge sharing in photon-counting pixels detectors affects the recording of spot intensity in an X-ray diffraction (XRD) setup. In the photon-counting configuration, the charge from photons that are absorbed at the boarder of a pixel will be shared between two pixels. If the threshold is high enough, these photons will not be counted whereas if it is low enough, they will be counted twice. In an XRD setup, the intensity and position of various spots should be recorded. Thus, the intensity measure will be affected by the setting of the threshold. In this study, we used a system level Monte Carlo simulator to evaluate the variations in the intensity signals for different threshold settings and spot sizes. The simulated setup included an 8keV mono-chromatic source (providing a Gaussian shaped spot) and the MEDIPIX2 photon-counting pixel detector (55 μm x 55 μm pixel size with 300μm silicon) at various detector biases. Our study shows that the charge-sharing distortion can be compensated by numerical post processing and that high resolution in both charge distribution and position can be achieved

Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

International Nuclear Information System (INIS)

Yan Wenqi; Hu Hailong; Zhang Gaolong

2013-01-01

Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO{sub 2} interface of segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis; Fretwurst, Eckhart; Garutti, Erika; Klanner, Robert; Schwandt, Joern [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

2016-07-01

The surface radiation damage of SiO{sub 2} grown on high-ohmic Si, as used for the fabrication of segmented silicon sensors, has been investigated. Circular p- and n-MOSFETs, biased in accumulation and inversion at a field in the SiO{sub 2} of about 500 kV/cm, have been irradiated by X-rays up to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation, the gate voltage has been cycled from inversion to accumulation conditions and back, and from the dependence of the drain-source current, on gate voltage, the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface determined. From the threshold voltage, the effective oxide-charge density is calculated. Using the subthreshold-current technique the contribution of interface traps, in the lower and the upper part of the energy Si bandgap, and of fixed oxide-charge to the effective oxide-charge density has been estimated. Results on the dose dependence of the above quantities, the charging-up and discharging of border traps when changing the gate voltage, and the hole and electron mobilities at the Si-SiO{sub 2} interface are presented.

Photon counting detector for the personal radiography inspection system “SIBSCAN”

Energy Technology Data Exchange (ETDEWEB)

Babichev, E.A.; Baru, S.E. [Budker Institute of Nuclear Physics, Lavrentiev ave. 11, Novosibirsk 630090 (Russian Federation); Grigoriev, D.N. [Budker Institute of Nuclear Physics, Lavrentiev ave. 11, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogova st. 2, Novosibirsk 630090 (Russian Federation); Novosibirsk State Technical University, 20 Prospekt K. Marksa, Novosibirsk 630073 (Russian Federation); Leonov, V.V. [Budker Institute of Nuclear Physics, Lavrentiev ave. 11, Novosibirsk 630090 (Russian Federation); Oleynikov, V.P. [Budker Institute of Nuclear Physics, Lavrentiev ave. 11, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogova st. 2, Novosibirsk 630090 (Russian Federation); Porosev, V.V., E-mail: porosev@inp.nsk.su [Budker Institute of Nuclear Physics, Lavrentiev ave. 11, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogova st. 2, Novosibirsk 630090 (Russian Federation); Savinov, G.A. [Budker Institute of Nuclear Physics, Lavrentiev ave. 11, Novosibirsk 630090 (Russian Federation)

2017-02-11

X-ray detectors operating in the energy integrating mode are successfully used in many different applications. Nevertheless the direct photon counting detectors, having the superior parameters in comparison with the integrating ones, are rarely used yet. One of the reasons for this is the low value of the electrical signal generated by a detected photon. Silicon photomultiplier (SiPM) based scintillation counters have a high detection efficiency, high electronic gain and compact dimensions. This makes them a very attractive candidate to replace routinely used detectors in many fields. More than 10 years ago the digital scanning radiography system based on multistrip ionization chamber (MIC) was suggested at Budker Institute of Nuclear Physics. The detector demonstrates excellent radiation resistance and parameter stability after 5 year operations and an imaging of up to 1000 persons per day. Currently, the installations operate at several Russian airports and at subway stations in some cities. At the present time we design a new detector operating in the photon counting mode, having superior parameters than the gas one, based on scintillator – SiPM assemblies. This detector has close to zero noise, higher quantum efficiency and a count rate capability of more than 5 MHz per channel (20% losses), which leads to better image quality and improved detection capability. The suggested detector technology could be expanded to medical applications.

Photon counting detector for the personal radiography inspection system “SIBSCAN”

International Nuclear Information System (INIS)

Babichev, E.A.; Baru, S.E.; Grigoriev, D.N.; Leonov, V.V.; Oleynikov, V.P.; Porosev, V.V.; Savinov, G.A.

2017-01-01

X-ray detectors operating in the energy integrating mode are successfully used in many different applications. Nevertheless the direct photon counting detectors, having the superior parameters in comparison with the integrating ones, are rarely used yet. One of the reasons for this is the low value of the electrical signal generated by a detected photon. Silicon photomultiplier (SiPM) based scintillation counters have a high detection efficiency, high electronic gain and compact dimensions. This makes them a very attractive candidate to replace routinely used detectors in many fields. More than 10 years ago the digital scanning radiography system based on multistrip ionization chamber (MIC) was suggested at Budker Institute of Nuclear Physics. The detector demonstrates excellent radiation resistance and parameter stability after 5 year operations and an imaging of up to 1000 persons per day. Currently, the installations operate at several Russian airports and at subway stations in some cities. At the present time we design a new detector operating in the photon counting mode, having superior parameters than the gas one, based on scintillator – SiPM assemblies. This detector has close to zero noise, higher quantum efficiency and a count rate capability of more than 5 MHz per channel (20% losses), which leads to better image quality and improved detection capability. The suggested detector technology could be expanded to medical applications.

X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiaguo

2013-06-15

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO{sub 2} interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO{sub 2} to the Si-SiO{sub 2} interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An

X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

International Nuclear Information System (INIS)

Zhang, Jiaguo

2013-06-01

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO 2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO 2 to the Si-SiO 2 interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An electron

Counting statistics in low level radioactivity measurements fluctuating counting efficiency

International Nuclear Information System (INIS)

Pazdur, M.F.

1976-01-01

A divergence between the probability distribution of the number of nuclear disintegrations and the number of observed counts, caused by counting efficiency fluctuation, is discussed. The negative binominal distribution is proposed to describe the probability distribution of the number of counts, instead of Poisson distribution, which is assumed to hold for the number of nuclear disintegrations only. From actual measurements the r.m.s. amplitude of counting efficiency fluctuation is estimated. Some consequences of counting efficiency fluctuation are investigated and the corresponding formulae are derived: (1) for detection limit as a function of the number of partial measurements and the relative amplitude of counting efficiency fluctuation, and (2) for optimum allocation of the number of partial measurements between sample and background. (author)

Sample to answer visualization pipeline for low-cost point-of-care blood cell counting

Science.gov (United States)

Smith, Suzanne; Naidoo, Thegaran; Davies, Emlyn; Fourie, Louis; Nxumalo, Zandile; Swart, Hein; Marais, Philip; Land, Kevin; Roux, Pieter

2015-03-01

We present a visualization pipeline from sample to answer for point-of-care blood cell counting applications. Effective and low-cost point-of-care medical diagnostic tests provide developing countries and rural communities with accessible healthcare solutions [1], and can be particularly beneficial for blood cell count tests, which are often the starting point in the process of diagnosing a patient [2]. The initial focus of this work is on total white and red blood cell counts, using a microfluidic cartridge [3] for sample processing. Analysis of the processed samples has been implemented by means of two main optical visualization systems developed in-house: 1) a fluidic operation analysis system using high speed video data to determine volumes, mixing efficiency and flow rates, and 2) a microscopy analysis system to investigate homogeneity and concentration of blood cells. Fluidic parameters were derived from the optical flow [4] as well as color-based segmentation of the different fluids using a hue-saturation-value (HSV) color space. Cell count estimates were obtained using automated microscopy analysis and were compared to a widely accepted manual method for cell counting using a hemocytometer [5]. The results using the first iteration microfluidic device [3] showed that the most simple - and thus low-cost - approach for microfluidic component implementation was not adequate as compared to techniques based on manual cell counting principles. An improved microfluidic design has been developed to incorporate enhanced mixing and metering components, which together with this work provides the foundation on which to successfully implement automated, rapid and low-cost blood cell counting tests.

Evaluation of Silicone as an Endovascular Stent Membrane: In Vivo Canine Studies

International Nuclear Information System (INIS)

Fontaine, Arthur B.; Borsa, John J.; Hoffer, Eric; Bloch, Robert; So, Corali

2001-01-01

Purpose: Comparative evaluation of the biological effects of a silicone-covered stent versus a bare-metal stent, in an animal model.Methods: Twelve stent implants were placed in the iliac arteries of six adult dogs. Each animal received one 8-mm x 20-mm silicone-covered stent (Permalume; Boston Scientific Vascular, Watertown, MA, USA), in the right iliac artery and one Wallstent (Boston Scientific Vascular) of the same diameter and length in the left iliac artery, during systemic anticoagulation. Angiography was performed before and after implantations. Animals were then allowed to recover and no platelet suppression was given during a 6-week interval, after which the animals were euthanized. The stented arteries were isolated and pressure-fixed in situ with 10% buffered formalin at a pressure of approximately 100 mmHg for a period of 1 hr. Two of 12 stented specimens were opened lengthwise and the luminal surfaces were photographed. Ten of 12 stented arterial segments were encased in methacrylate, then stained with hematoxylin and eosin. Neointimal thickness was quantified on histologic cross-section, for both bare and covered stents. The mean neointimal thicknesses were compared for significant difference using a student t-test.Results: All implants were widely patent at 6-week follow-up angiography. Histologic analysis showed bare metal stents covered by a thin uniform lining of neointima composed of smooth muscle cells in a hyaline matrix (mean thickness of 189 ± 47 μm). Silicone covered stents were devoid of neointima. There was no chronic thrombus or mature endothelium noted anywhere upon the internal silicone surfaces of any of the specimens. There was no foreign body reaction to the silicone cover.Conclusion: Short-term implantation of a silicone-lined Wallstent in canine iliac arteries is well tolerated. Silicone appears to be inert at 6 weeks in this experimental application

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Timing performance of the silicon PET insert probe.

Science.gov (United States)

Studen, A; Burdette, D; Chesi, E; Cindro, V; Clinthorne, N H; Cochran, E; Grosicar, B; Kagan, H; Lacasta, C; Linhart, V; Mikuz, M; Stankova, V; Weilhammer, P; Zontar, D

2010-01-01

Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an (22)Na source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.

Si-strip photon counting detectors for contrast-enhanced spectral mammography

Science.gov (United States)

Chen, Buxin; Reiser, Ingrid; Wessel, Jan C.; Malakhov, Nail; Wawrzyniak, Gregor; Hartsough, Neal E.; Gandhi, Thulasi; Chen, Chin-Tu; Iwanczyk, Jan S.; Barber, William C.

2015-08-01

We report on the development of silicon strip detectors for energy-resolved clinical mammography. Typically, X-ray integrating detectors based on scintillating cesium iodide CsI(Tl) or amorphous selenium (a-Se) are used in most commercial systems. Recently, mammography instrumentation has been introduced based on photon counting Si strip detectors. The required performance for mammography in terms of the output count rate, spatial resolution, and dynamic range must be obtained with sufficient field of view for the application, thus requiring the tiling of pixel arrays and particular scanning techniques. Room temperature Si strip detector, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel, provided that the sensors are designed for rapid signal formation across the X-ray energy ranges of the application. We present our methods and results from the optimization of Si-strip detectors for contrast enhanced spectral mammography. We describe the method being developed for quantifying iodine contrast using the energy-resolved detector with fixed thresholds. We demonstrate the feasibility of the method by scanning an iodine phantom with clinically relevant contrast levels.

Applicability of Clearance Automatic Laser Inspection System to Clearance Measurement of Concrete Segments

International Nuclear Information System (INIS)

Sasaki, M.; Ogino, H.; Hattori, T.

2009-01-01

In the decommissioning of a nuclear power plant, large amounts of metal scrap and concrete segments require disposal when dismantling the nuclear reactor and surrounding facilities. When their activity level is negligible or sufficiently small, they can be regarded as general industrial waste. To distinguish between radioactive and nonradioactive materials, the clearance level for each radionuclide has been determined in units of activity concentration. These clearance levels are indicated in the International Atomic Energy Agency (IAEA) Safety Standards Series No. RS-G-1.7. The Japanese regulatory authority decided in 2005 to adopt the values given in RS-G-1.7 as clearance levels in legislation. Recently, a Clearance Automatic Laser Inspection System (CLALIS) has been developed utilizing gamma-ray measurement, automatic laser shape measurement and Monte Carlo calculation. CLALIS comprises four laser scanners and eight large plastic scintillation detectors surrounded by a 5-cm-thick lead shield. Using three-dimensional (3D) laser scanning, a measurement target, which is placed on the measuring tray, is represented as a dot image. The dot image is converted into voxels after noise removal, and is written in MCNP (A General Monte Carlo N-Particle Transport Code System) input files. When the gamma-ray measurement is carried out, the MCNP calculations are also carried out to obtain the calibration factor and background (BG) correction factors. For the clearance measurement of concrete segments, the effect of gamma-rays from natural radionuclides in the measurement target, such as K-40 and the radioactive decay products of Th-232 and U-238, should be taken into account to ensure adequate waste management. Since NE102A plastic scintillation detectors are used for gamma-ray measurement in CLALIS, it is impossible to distinguish between the count rates of natural radionuclides and contaminants on the basis of gamma-ray energy information. To overcome this problem, the

Status of the segment interconnect, cable segment ancillary logic, and the cable segment hybrid driver projects

International Nuclear Information System (INIS)

Swoboda, C.; Barsotti, E.; Chappa, S.; Downing, R.; Goeransson, G.; Lensy, D.; Moore, G.; Rotolo, C.; Urish, J.

1985-01-01

The FASTBUS Segment Interconnect (SI) provides a communication path between two otherwise independent, asynchronous bus segments. In particular, the Segment Interconnect links a backplane crate segment to a cable segment. All standard FASTBUS address and data transactions can be passed through the SI or any number of SIs and segments in a path. Thus systems of arbitrary connection complexity can be formed, allowing simultaneous independent processing, yet still permitting devices associated with one segment to be accessed from others. The model S1 Segment Interconnect and the Cable Segment Ancillary Logic covered in this report comply with all the mandatory features stated in the FASTBUS specification document DOE/ER-0189. A block diagram of the SI is shown

Reversible photoluminescence in spiropyran-modified porous silicon

International Nuclear Information System (INIS)

Lee, Chen-Yu; Hu, Chih-Hsuan; Cheng, Sheng-Lin; Chu, Chih-Chien; Hsiao, Vincent K.S.

2015-01-01

Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material by using reversible photoluminescence (PL). Before spiropyran modification, the peak wavelength from PS was approximately 600 nm. Subsequent spiropyran modification strongly quenched the PL intensity, from 15,000 to 2000 counts. However, under UV light irradiation, the PL intensity from spiro-PS was increased gradually to 20,000 counts because of the photoinduced ring opening from a colorless spiropyran (SP-form) to a colored merocyanine (MC-form). Furthermore, the resulting peak wavelength of the PL of an MC–PS sample red-shifted from 600 to 650 nm, and the PL intensity was higher than that of unmodified PS. Because the fluorescence emission band (500–700 nm) of PS substantially overlapped the absorption band (500–700 nm) of the MC-form of spiropyran, the energy transfer from the PS (donor) to the open-ring-state MC-form (acceptor) occurs efficiently. The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus. The current demonstrations have potential in reversible solid-state lighting or data storage applications. - Highlights: • Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material with reversible photoluminescence (PL). • UV light irradiation make PL intensity from spiro-PS increased due to the photo-induced ring opening process. • The energy transfer from the PS (donor) to the open-ring state of spiropyran (acceptor) was to be efficient due to the fluorescence emission band of PS substantially overlapped with the absorption band of the ring-opened spiro. • The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus

Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

International Nuclear Information System (INIS)

Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

1995-11-01

The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

Determining random counts in liquid scintillation counting

International Nuclear Information System (INIS)

Horrocks, D.L.

1979-01-01

During measurements involving coincidence counting techniques, errors can arise due to the detection of chance or random coincidences in the multiple detectors used. A method and the electronic circuits necessary are here described for eliminating this source of error in liquid scintillation detectors used in coincidence counting. (UK)

Large-Area Silicon Detectors for the CMS High Granularity Calorimeter

CERN Document Server

Pree, Elias

2017-01-01

During the so-called Phase-2 Upgrade, the CMS experiment at CERN will undergo significant improvements to cope with the 10-fold luminosity increase of the High Luminosity LHC (HL-LHC) era. Especially the forward calorimetry will suffer from very high radiation levels and intensified pileup in the detectors. For this reason, the CMS collaboration is designing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (CE-E) and hadronic (CE-H) compartments. The CE-E and a large fraction of CE-H will consist of a sandwich structure with silicon as active detector material. This paper presents an overview of the ongoing sensor development for the HGCAL and highlights important design features and measurement techniques. The design and layout of an 8-inch silicon sensor prototype is shown. The hexagonal sensors consist of 235 pads, each with an area of about \\mbox{1~cm$^{2}$}. Furthermore, Synopsys...

Construction of the new silicon microstrips tracker for the Phase-II ATLAS detector

CERN Document Server

Liang, Zhijun; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The design of the ATLAS Upgrade inner tracker (ITk) has already been defined. It consists of several layers of silicon particle detectors. The innermost layers will be composed of silicon pixel sensors, and the outer layers will consist of silicon microstrip sensors. This paper will focus on the latest research and development act...

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Composite cervical skin and cartilage flap provides a novel large airway substitute after long-segment tracheal resection.

Science.gov (United States)

Fabre, Dominique; Singhal, Sunil; De Montpreville, Vincent; Decante, Benoit; Mussot, Sacha; Chataigner, Olivier; Mercier, Olaf; Kolb, Frederic; Dartevelle, Philippe G; Fadel, Elie

2009-07-01

Airway replacement after long-segment tracheal resection for benign and malignant disease remains a challenging problem because of the lack of a substitute conduit. Ideally, an airway substitute should be well vascularized, rigid, and autologous to avoid infections, airway stenosis, and the need for immunosuppression. We report the development of an autologous tracheal substitute for long-segment tracheal resection that satisfies these criteria and demonstrates excellent short-term functional results in a large-animal study. Twelve adult pigs underwent long-segment (6 cm, 60% of total length) tracheal resection. Autologous costal cartilage strips measuring 6 cm x 2 mm were harvested from the chest wall and inserted at regular 0.5-cm intervals between dermal layers of a cervical skin flap. The neotrachea was then scaffolded by rotating the composite cartilage skin flap around a silicone stent measuring 6 cm in length and 1.4 cm in diameter. The neotrachea replaced the long segment of tracheal resection, and the donor flap site was closed with a double-Z plasty. Animals were killed at 1 week (group I, n = 4), 2 weeks (group II, n = 4), and 5 weeks (group III, n = 4). In group III the stent was removed 1 week before death. Viability of the neotrachea was monitored by means of daily flexible bronchoscopy and histologic examination at autopsy. Long-term morbidity and mortality were determined by monitoring weight gain, respiratory distress, and survival. There was no mortality during the study period. Weight gain was appropriate in all animals. Daily bronchoscopy and postmortem histologic evaluation confirmed excellent viability of the neotrachea. There was no evidence of suture-line dehiscence. Five animals had distal granulomas that were removed by using rigid bronchoscopy. In group III 1 animal had tracheomalacia, which was successfully managed by means of insertion of a silicon stent. Airway reconstruction with autologous cervical skin flaps scaffolded with costal

Photon counting arrays for AO wavefront sensors

CERN Document Server

Vallerga, J; McPhate, J; Mikulec, Bettina; Clark, Allan G; Siegmund, O; CERN. Geneva

2005-01-01

Future wavefront sensors for AO on large telescopes will require a large number of pixels and must operate at high frame rates. Unfortunately for CCDs, there is a readout noise penalty for operating faster, and this noise can add up rather quickly when considering the number of pixels required for the extended shape of a sodium laser guide star observed with a large telescope. Imaging photon counting detectors have zero readout noise and many pixels, but have suffered in the past with low QE at the longer wavelengths (>500 nm). Recent developments in GaAs photocathode technology, CMOS ASIC readouts and FPGA processing electronics have resulted in noiseless WFS detector designs that are competitive with silicon array detectors, though at ~40% the QE of CCDs. We review noiseless array detectors and compare their centroiding performance with CCDs using the best available characteristics of each. We show that for sub-aperture binning of 6x6 and greater that noiseless detectors have a smaller centroid error at flu...

A Medipix2-based imaging system for digital mammography with silicon pixel detectors

CERN Document Server

Bisogni, M G; Fantacci, M E; Mettivier, G; Montesi, M C; Novelli, M; Quattrocchi, M; Rosso, V; Russo, P; Stefanini, A

2004-01-01

In this paper we present the first tests of a digital imaging system based on a silicon pixel detector bump-bonded to an integrated circuit operating in single photon counting mode. The X-rays sensor is a 300 mu m thick silicon, 14 by 14 mm/sup 2/, upon which a matrix of 256 * 256 pixels has been built. The read-out chip, named MEDIPIX2, has been developed at CERN within the MEDIPIX2 Collaboration and it is composed by a matrix of 256 * 256 cells, 55 * 55 mu m/sup 2/. The spatial resolution properties of the system have been assessed by measuring the square wave resolution function (SWRF) and first images of a standard mammographic phantom were acquired using a radiographic tube in the clinical irradiation condition. (5 refs).

Radiation counting statistics

Energy Technology Data Exchange (ETDEWEB)

Suh, M. Y.; Jee, K. Y.; Park, K. K.; Park, Y. J.; Kim, W. H

1999-08-01

This report is intended to describe the statistical methods necessary to design and conduct radiation counting experiments and evaluate the data from the experiment. The methods are described for the evaluation of the stability of a counting system and the estimation of the precision of counting data by application of probability distribution models. The methods for the determination of the uncertainty of the results calculated from the number of counts, as well as various statistical methods for the reduction of counting error are also described. (Author). 11 refs., 8 tabs., 8 figs.

Radiation counting statistics

Energy Technology Data Exchange (ETDEWEB)

Suh, M. Y.; Jee, K. Y.; Park, K. K. [Korea Atomic Energy Research Institute, Taejon (Korea)

1999-08-01

This report is intended to describe the statistical methods necessary to design and conduct radiation counting experiments and evaluate the data from the experiments. The methods are described for the evaluation of the stability of a counting system and the estimation of the precision of counting data by application of probability distribution models. The methods for the determination of the uncertainty of the results calculated from the number of counts, as well as various statistical methods for the reduction of counting error are also described. 11 refs., 6 figs., 8 tabs. (Author)

Radiation counting statistics

International Nuclear Information System (INIS)

Suh, M. Y.; Jee, K. Y.; Park, K. K.; Park, Y. J.; Kim, W. H.

1999-08-01

This report is intended to describe the statistical methods necessary to design and conduct radiation counting experiments and evaluate the data from the experiment. The methods are described for the evaluation of the stability of a counting system and the estimation of the precision of counting data by application of probability distribution models. The methods for the determination of the uncertainty of the results calculated from the number of counts, as well as various statistical methods for the reduction of counting error are also described. (Author). 11 refs., 8 tabs., 8 figs

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Effect of silicon application to Eucalyptus camaldulensis on the population of Glycaspis brimblecombei (Hemiptera: Aphalaridae

Directory of Open Access Journals (Sweden)

Dalva Luiz de Queiroz

2016-06-01

Full Text Available The use of silicon in forestry has increased recently as it is directly related to improved resistance to insect pests. The red gum lerp psyllid, Glycaspis brimblecombei, occurs in all eucalypt producing regions in Brazil. Two field experiments were conducted to study the effect of silicon applied to Eucalyptus camaldulensis on the psyllid population. In the first experiment, the applications were made via soil (calcium silicate and leaves (potassium silicate in a nine months old E. camaldulensis plantation. In the second experiment, we evaluated silicon on seedlings, incorporating it into the substrate (soil or applying it on leaves (foliar. Monthly, for 24 months, the number of psyllid eggs and immatures were counted on leaf samples. The plant height was measured at 9, 12, 16 and 24 months (experiment 1 and at 4, 8, 12 and 24 months (experiment 2 after application. The numbers of eggs and immatures were lower in periods of higher precipitation, indicating less psyllid attack during the rainy season. The psyllid population was lower in treatments with application of silicon both foliar and via soil compared to control. No significant differences were found in the height of E. camaldulensis plants.

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Segmented block copolymers with monodisperse aramide end-segments

NARCIS (Netherlands)

Araichimani, A.; Gaymans, R.J.

2008-01-01

Segmented block copolymers were synthesized using monodisperse diaramide (TT) as hard segments and PTMO with a molecular weight of 2 900 g · mol-1 as soft segments. The aramide: PTMO segment ratio was increased from 1:1 to 2:1 thereby changing the structure from a high molecular weight multi-block

Tower counts

Science.gov (United States)

Woody, Carol Ann; Johnson, D.H.; Shrier, Brianna M.; O'Neal, Jennifer S.; Knutzen, John A.; Augerot, Xanthippe; O'Neal, Thomas A.; Pearsons, Todd N.

2007-01-01

Counting towers provide an accurate, low-cost, low-maintenance, low-technology, and easily mobilized escapement estimation program compared to other methods (e.g., weirs, hydroacoustics, mark-recapture, and aerial surveys) (Thompson 1962; Siebel 1967; Cousens et al. 1982; Symons and Waldichuk 1984; Anderson 2000; Alaska Department of Fish and Game 2003). Counting tower data has been found to be consistent with that of digital video counts (Edwards 2005). Counting towers do not interfere with natural fish migration patterns, nor are fish handled or stressed; however, their use is generally limited to clear rivers that meet specific site selection criteria. The data provided by counting tower sampling allow fishery managers to determine reproductive population size, estimate total return (escapement + catch) and its uncertainty, evaluate population productivity and trends, set harvest rates, determine spawning escapement goals, and forecast future returns (Alaska Department of Fish and Game 1974-2000 and 1975-2004). The number of spawning fish is determined by subtracting subsistence, sport-caught fish, and prespawn mortality from the total estimated escapement. The methods outlined in this protocol for tower counts can be used to provide reasonable estimates ( plus or minus 6%-10%) of reproductive salmon population size and run timing in clear rivers. 

Segmentation of consumer's markets and evaluation of market's segments

OpenAIRE

ŠVECOVÁ, Iveta

2013-01-01

The goal of this bachelor thesis was to explain a possibly segmentation of consumer´s markets for a chosen company, and to present a suitable goods offer, so it would be suitable to the needs of selected segments. The work is divided into theoretical and practical part. First part describes marketing, segmentation, segmentation of consumer's markets, consumer's market, market's segments a other terms. Second part describes an evaluation of questionnaire survey, discovering of market's segment...

Epifluorescent direct counts of bacteria and viruses from topsoil of various desert dust storm regions

Science.gov (United States)

Gonzalez-Martin, Cristina; Teigell-Perez, Nuria; Lyles, Mark; Valladares, Basilio; Griffin, Dale W.

2013-01-01

Topsoil from arid regions is the main source of dust clouds that move through the earth's atmosphere, and microbial communities within these soils can survive long-range dispersion. Microbial abundance and chemical composition were analyzed in topsoil from various desert regions. Statistical analyses showed that microbial direct counts were strongly positively correlated with calcium concentrations and negatively correlated with silicon concentrations. While variance between deserts was expected, it was interesting to note differences between sample sites within a given desert region, illustrating the 'patchy' nature of microbial communities in desert environments.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

Science.gov (United States)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Compton imaging with a highly-segmented, position-sensitive HPGe detector

Energy Technology Data Exchange (ETDEWEB)

Steinbach, T.; Hirsch, R.; Reiter, P.; Birkenbach, B.; Bruyneel, B.; Eberth, J.; Hess, H.; Lewandowski, L. [Universitaet zu Koeln, Institut fuer Kernphysik, Koeln (Germany); Gernhaeuser, R.; Maier, L.; Schlarb, M.; Weiler, B.; Winkel, M. [Technische Universitaet Muenchen, Physik Department, Garching (Germany)

2017-02-15

A Compton camera based on a highly-segmented high-purity germanium (HPGe) detector and a double-sided silicon-strip detector (DSSD) was developed, tested, and put into operation; the origin of γ radiation was determined successfully. The Compton camera is operated in two different modes. Coincidences from Compton-scattered γ-ray events between DSSD and HPGe detector allow for best angular resolution; while the high-efficiency mode takes advantage of the position sensitivity of the highly-segmented HPGe detector. In this mode the setup is sensitive to the whole 4π solid angle. The interaction-point positions in the 36-fold segmented large-volume HPGe detector are determined by pulse-shape analysis (PSA) of all HPGe detector signals. Imaging algorithms were developed for each mode and successfully implemented. The angular resolution sensitively depends on parameters such as geometry, selected multiplicity and interaction-point distances. Best results were obtained taking into account the crosstalk properties, the time alignment of the signals and the distance metric for the PSA for both operation modes. An angular resolution between 13.8 {sup circle} and 19.1 {sup circle}, depending on the minimal interaction-point distance for the high-efficiency mode at an energy of 1275 keV, was achieved. In the coincidence mode, an increased angular resolution of 4.6 {sup circle} was determined for the same γ-ray energy. (orig.)

Developmental identity versus typology: Lucy has only four sacral segments.

Science.gov (United States)

Machnicki, Allison L; Lovejoy, C Owen; Reno, Philip L

2016-08-01

Both interspecific and intraspecific variation in vertebral counts reflect the action of patterning control mechanisms such as Hox. The preserved A.L. 288-1 ("Lucy") sacrum contains five fused elements. However, the transverse processes of the most caudal element do not contact those of the segment immediately craniad to it, leaving incomplete sacral foramina on both sides. This conforms to the traditional definition of four-segmented sacra, which are very rare in humans and African apes. It was recently suggested that fossilization damage precludes interpretation of this specimen and that additional sacral-like features of its last segment (e.g., the extent of the sacral hiatus) suggest a general Australopithecus pattern of five sacral vertebrae. We provide updated descriptions of the original Lucy sacrum. We evaluate sacral/coccygeal variation in a large sample of extant hominoids and place it within the context of developmental variation in the mammalian vertebral column. We report that fossilization damage did not shorten the transverse processes of the fifth segment of Lucy's sacrum. In addition, we find that the extent of the sacral hiatus is too variable in apes and hominids to provide meaningful information on segment identity. Most importantly, a combination of sacral and coccygeal features is to be expected in vertebrae at regional boundaries. The sacral/caudal boundary appears to be displaced cranially in early hominids relative to extant African apes and humans, a condition consistent with the likely ancestral condition for Miocene hominoids. While not definitive in itself, a four-segmented sacrum accords well with the "long-back" model for the Pan/Homo last common ancestor. Am J Phys Anthropol 160:729-739, 2016. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Counting carbohydrates

Science.gov (United States)

Carb counting; Carbohydrate-controlled diet; Diabetic diet; Diabetes-counting carbohydrates ... Many foods contain carbohydrates (carbs), including: Fruit and fruit juice Cereal, bread, pasta, and rice Milk and milk products, soy milk Beans, legumes, ...

Repeatability of differential goat bulk milk culture and associations with somatic cell count, total bacterial count, and standard plate count

OpenAIRE

Koop, G.; Dik, N.; Nielen, M.; Lipman, L.J.A.

2010-01-01

The aims of this study were to assess how different bacterial groups in bulk milk are related to bulk milk somatic cell count (SCC), bulk milk total bacterial count (TBC), and bulk milk standard plate count (SPC) and to measure the repeatability of bulk milk culturing. On 53 Dutch dairy goat farms, 3 bulk milk samples were collected at intervals of 2 wk. The samples were cultured for SPC, coliform count, and staphylococcal count and for the presence of Staphylococcus aureus. Furthermore, SCC ...

Feasibility study for the in vivo measurement of silicon and beryllium by nuclear techniques

International Nuclear Information System (INIS)

Ettinger, K.V.; Morgan, W.D.; Miola, U.; Vartsky, D.; Ellis, K.J.; Wielopolski, L.; Cohn, S.H.

1980-01-01

Experiments were performed to assess the feasibility of measuring silicon in vivo by means of the prompt neutron inelastic scattering reaction 28 Si(n,n'γ) 28 Si. The optimum neutron energy in terms of counts per dose delivered to a liquid tissue-equivalent phantom was found to be in the range 5 to 8 MeV. By pulsing the neutron beam and counting only in the on period it was possible to substantially reduce the background both from thermal neutron interactions in the phantom and also from the fast interfering reaction 31 P(n,α) 28 Al. In final measurements with a realistic chest phantom no interferences from other prompt inelastic scattering reactions were observed. With one Ge(Li) detector of 19% relative efficiency, a detection limit of 0.6g silicon per rem was obtained. A system comprising six 25% efficient detectors would be capable of measuring normal lung silicon contents of about 0.1g. Berylliosis, a granulomatous lung disease, has been observed in persons with lung contents ranging from micrograms to tens of milligrams (a normal value is 1-2 μg).. For gamma photons between 1.665 MeV and 2.225 MeV (the beryllium and deuterium photonuclear thresholds respectively), the production of neutrons is a unique property of beryllium which might be exploited for analysis in vivo. Experiments with a Pb-filtered 124 Sb source and an enriched 10 BF 3 counter provided data from which it was projected that a 72-detector array might yield a detection limit of 3.4 mg Be for a lung dose of 2.5 rads. Possible methods for improving this result are discussed

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

Science.gov (United States)

Matsuura, Hideharu

2015-04-01

High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

Image Processing of Porous Silicon Microarray in Refractive Index Change Detection.

Science.gov (United States)

Guo, Zhiqing; Jia, Zhenhong; Yang, Jie; Kasabov, Nikola; Li, Chuanxi

2017-06-08

A new method for extracting the dots is proposed by the reflected light image of porous silicon (PSi) microarray utilization in this paper. The method consists of three parts: pretreatment, tilt correction and spot segmentation. First, based on the characteristics of different components in HSV (Hue, Saturation, Value) space, a special pretreatment is proposed for the reflected light image to obtain the contour edges of the array cells in the image. Second, through the geometric relationship of the target object between the initial external rectangle and the minimum bounding rectangle (MBR), a new tilt correction algorithm based on the MBR is proposed to adjust the image. Third, based on the specific requirements of the reflected light image segmentation, the array cells are segmented into dots as large as possible and the distance between the dots is equal in the corrected image. Experimental results show that the pretreatment part of this method can effectively avoid the influence of complex background and complete the binarization processing of the image. The tilt correction algorithm has a shorter computation time, which makes it highly suitable for tilt correction of reflected light images. The segmentation algorithm makes the dots in a regular arrangement, excludes the edges and the bright spots. This method could be utilized in the fast, accurate and automatic dots extraction of the PSi microarray reflected light image.

Image Processing of Porous Silicon Microarray in Refractive Index Change Detection

Directory of Open Access Journals (Sweden)

Zhiqing Guo

2017-06-01

Full Text Available A new method for extracting the dots is proposed by the reflected light image of porous silicon (PSi microarray utilization in this paper. The method consists of three parts: pretreatment, tilt correction and spot segmentation. First, based on the characteristics of different components in HSV (Hue, Saturation, Value space, a special pretreatment is proposed for the reflected light image to obtain the contour edges of the array cells in the image. Second, through the geometric relationship of the target object between the initial external rectangle and the minimum bounding rectangle (MBR, a new tilt correction algorithm based on the MBR is proposed to adjust the image. Third, based on the specific requirements of the reflected light image segmentation, the array cells are segmented into dots as large as possible and the distance between the dots is equal in the corrected image. Experimental results show that the pretreatment part of this method can effectively avoid the influence of complex background and complete the binarization processing of the image. The tilt correction algorithm has a shorter computation time, which makes it highly suitable for tilt correction of reflected light images. The segmentation algorithm makes the dots in a regular arrangement, excludes the edges and the bright spots. This method could be utilized in the fast, accurate and automatic dots extraction of the PSi microarray reflected light image.

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

Science.gov (United States)

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

X-ray imaging with photon counting hybrid semiconductor pixel detectors

CERN Document Server

Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

1999-01-01

Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

Measures to handle accidental contamination of persons with standard counting devices available in a department of nuclear medicine

International Nuclear Information System (INIS)

Aiginger, H.; Lauer, D.; Unfried, E.; Koenig, F.; Ogris, E.

1998-01-01

The assets and shortcomings of a well-type NaI detector and a Ge detector were examined using the Marinelli geometry, test tube geometry, and beaker geometry. Plots of the efficiency vs. energy (efficiency calibration), recorded time vs. true time (dead-time effects), and maximum activity vs. energy are reproduced. A high counting efficiency is typical of the scintillation detector in the well for the test tube geometry, particularly in the low energy range. For energies higher than 100 keV, the counting efficiency decreases because of the increasing penetration of the detector bulk by high-energy photons. For the germanium detector, the highest counting efficiency was achieved in the beaker geometry. A linear relationship exists between the calculated and measured counts at the beginning of the recorded curve for both systems. For the well-type detector the maximum detectable count rate was about 30 kcps, the linearity of the plot of the true count rate was guaranteed up to 10 kcps. Dead time correction was to be made at higher count rates. For the germanium detector the maximum detectable count rate was only about 8 kcps due to the longer dead time, the linear segment, however, was longer than for the scintillation detector. It is concluded that although the maximum detectable count rate of the germanium detector is lower, higher true activities can be detected with it owing to the lower detection efficiency. The well-type scintillation detector is advantageous for the test tube geometry. (P.A.)

Unilateral segmental Darier disease following Blaschko lines: A case report

Directory of Open Access Journals (Sweden)

César Bimbi

2017-07-01

Full Text Available Darier disease is an autosomal-dominant disorder of keratin production which leads to a loss in epithelial adhesion and abnormal keratinization. The clinical correspondence is keratotic papules grouped in sebaceous areas of trunk, scalp, forehead and flexures. It is a rare disease and the variant focused on here of unilateral segmental distribution following the lines of Blaschko is rarer still, considering the fact that this presentation counts for only 10% of this already uncommom disease and with only 40 cases being reported in English medical literature. Mutation in this gene is expressed in the skin and brain. The treatment of Darier disease can be challenging and is often difficult and sometimes unsatisfactory. Systemic retinoids are considered the drug of choice for treating Darier disease. However, their use is limited by potential side effects. We described the case a metalworker male with unilateral segmental Darier disease following Blaschko lines and we review the literature on this subject.

White blood cell differential count of maturation stages in bone marrow smear using dual-stage convolutional neural networks.

Directory of Open Access Journals (Sweden)

Jin Woo Choi

Full Text Available The white blood cell differential count of the bone marrow provides information concerning the distribution of immature and mature cells within maturation stages. The results of such examinations are important for the diagnosis of various diseases and for follow-up care after chemotherapy. However, manual, labor-intensive methods to determine the differential count lead to inter- and intra-variations among the results obtained by hematologists. Therefore, an automated system to conduct the white blood cell differential count is highly desirable, but several difficulties hinder progress. There are variations in the white blood cells of each maturation stage, small inter-class differences within each stage, and variations in images because of the different acquisition and staining processes. Moreover, a large number of classes need to be classified for bone marrow smear analysis, and the high density of touching cells in bone marrow smears renders difficult the segmentation of single cells, which is crucial to traditional image processing and machine learning. Few studies have attempted to discriminate bone marrow cells, and even these have either discriminated only a few classes or yielded insufficient performance. In this study, we propose an automated white blood cell differential counting system from bone marrow smear images using a dual-stage convolutional neural network (CNN. A total of 2,174 patch images were collected for training and testing. The dual-stage CNN classified images into 10 classes of the myeloid and erythroid maturation series, and achieved an accuracy of 97.06%, a precision of 97.13%, a recall of 97.06%, and an F-1 score of 97.1%. The proposed method not only showed high classification performance, but also successfully classified raw images without single cell segmentation and manual feature extraction by implementing CNN. Moreover, it demonstrated rotation and location invariance. These results highlight the promise of

White blood cell differential count of maturation stages in bone marrow smear using dual-stage convolutional neural networks.

Science.gov (United States)

Choi, Jin Woo; Ku, Yunseo; Yoo, Byeong Wook; Kim, Jung-Ah; Lee, Dong Soon; Chai, Young Jun; Kong, Hyoun-Joong; Kim, Hee Chan

2017-01-01

The white blood cell differential count of the bone marrow provides information concerning the distribution of immature and mature cells within maturation stages. The results of such examinations are important for the diagnosis of various diseases and for follow-up care after chemotherapy. However, manual, labor-intensive methods to determine the differential count lead to inter- and intra-variations among the results obtained by hematologists. Therefore, an automated system to conduct the white blood cell differential count is highly desirable, but several difficulties hinder progress. There are variations in the white blood cells of each maturation stage, small inter-class differences within each stage, and variations in images because of the different acquisition and staining processes. Moreover, a large number of classes need to be classified for bone marrow smear analysis, and the high density of touching cells in bone marrow smears renders difficult the segmentation of single cells, which is crucial to traditional image processing and machine learning. Few studies have attempted to discriminate bone marrow cells, and even these have either discriminated only a few classes or yielded insufficient performance. In this study, we propose an automated white blood cell differential counting system from bone marrow smear images using a dual-stage convolutional neural network (CNN). A total of 2,174 patch images were collected for training and testing. The dual-stage CNN classified images into 10 classes of the myeloid and erythroid maturation series, and achieved an accuracy of 97.06%, a precision of 97.13%, a recall of 97.06%, and an F-1 score of 97.1%. The proposed method not only showed high classification performance, but also successfully classified raw images without single cell segmentation and manual feature extraction by implementing CNN. Moreover, it demonstrated rotation and location invariance. These results highlight the promise of the proposed method

White blood cell differential count of maturation stages in bone marrow smear using dual-stage convolutional neural networks

Science.gov (United States)

Choi, Jin Woo; Ku, Yunseo; Yoo, Byeong Wook; Kim, Jung-Ah; Lee, Dong Soon; Chai, Young Jun; Kong, Hyoun-Joong

2017-01-01

The white blood cell differential count of the bone marrow provides information concerning the distribution of immature and mature cells within maturation stages. The results of such examinations are important for the diagnosis of various diseases and for follow-up care after chemotherapy. However, manual, labor-intensive methods to determine the differential count lead to inter- and intra-variations among the results obtained by hematologists. Therefore, an automated system to conduct the white blood cell differential count is highly desirable, but several difficulties hinder progress. There are variations in the white blood cells of each maturation stage, small inter-class differences within each stage, and variations in images because of the different acquisition and staining processes. Moreover, a large number of classes need to be classified for bone marrow smear analysis, and the high density of touching cells in bone marrow smears renders difficult the segmentation of single cells, which is crucial to traditional image processing and machine learning. Few studies have attempted to discriminate bone marrow cells, and even these have either discriminated only a few classes or yielded insufficient performance. In this study, we propose an automated white blood cell differential counting system from bone marrow smear images using a dual-stage convolutional neural network (CNN). A total of 2,174 patch images were collected for training and testing. The dual-stage CNN classified images into 10 classes of the myeloid and erythroid maturation series, and achieved an accuracy of 97.06%, a precision of 97.13%, a recall of 97.06%, and an F-1 score of 97.1%. The proposed method not only showed high classification performance, but also successfully classified raw images without single cell segmentation and manual feature extraction by implementing CNN. Moreover, it demonstrated rotation and location invariance. These results highlight the promise of the proposed method

How sedimentation affects rift segment interaction during oblique extension: a 4D analogue modelling study

Science.gov (United States)

Zwaan, Frank; Schreurs, Guido; Adam, Jürgen

2017-04-01

During the early stages of rifting, rift segments may form along non-continuous and/or offset pre-existing weaknesses. It is important to understand how these initial rift segments interact and connect to form a continuous rift system. Previous modelling of rift interaction structures has shown the dominant influence of oblique extension, promoting rift segment linkage (e.g. Zwaan et al., 2016) and eventual continent break-up (Brune et al., 2012). However, these studies did not incorporate sedimentation, which can have important implications for rift evolution (e.g. Bialas and Buck, 2009). Here we present a series of analogue model experiments investigating the influence of sedimentation on rift interaction structures under oblique extension conditions. Our set-up involves a base of compressed foam and plexiglass that forces distributed extension in the overlying analogue materials when the model sidewalls move apart. A sand layer simulates the brittle upper crust and a viscous sand/silicone mixture the ductile lower crust. One of the underlying base plates can move laterally allowing oblique extension. Right-stepping offset and disconnected lines of silicone (seeds) on top of the basal viscous serve as inherited structures since the strong sand cover is locally thinner. We apply syn-rift sediments by filling in the developing rift and transfer zone basins with sand at fixed time steps. Models are run either with sedimentation or without to allow comparison. The first results suggest that the gross structures are similar with or without sedimentation. As seen by Zwaan et al. (2016), dextral oblique extension promotes rift linkage because rift propagation aligns itself perpendicular to the extension direction. This causes the rift segments to grow towards each other and to establish a continuous rift structure. However, the structures within the rift segments show quite different behaviour when sedimentation is applied. The extra sediment loading in the rift basin

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Analysis on approach of safeguards implementation at research reactor handling item count and bulk material

International Nuclear Information System (INIS)

Kim, Hyun Jo; Lee, Sung Ho; Lee, Byung Doo; Jung, Juang

2016-01-01

KiJang research reactor (KJRR) will be constructed to produce the radioisotope such as Mo-99 etc., provide the neutron transmutation doping (NTD) service of silicon, and develop the core technologies of research reactor. In this paper, the features of the process and nuclear material flow are reviewed and the material balance area (MBA) and key measurement point (KMP) are established based on the nuclear material flow. Also, this paper reviews the approach on safeguards and nuclear material accountancy at the facility level for Safeguards-by-Design at research reactor handling item count and bulk material. In this paper, MBA and KMPs are established through the analysis on facility features and major process at KJRR handling item count and bulk material. Also, this paper reviews the IAEA safeguards implementation and nuclear material accountancy at KJRR. It is necessary to discuss the safeguards approach on the fresh FM target assemblies and remaining uranium in the intermediate level liquid wastes

Analysis on approach of safeguards implementation at research reactor handling item count and bulk material

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun Jo; Lee, Sung Ho; Lee, Byung Doo; Jung, Juang [KAERI, Daejeon (Korea, Republic of)

2016-05-15

KiJang research reactor (KJRR) will be constructed to produce the radioisotope such as Mo-99 etc., provide the neutron transmutation doping (NTD) service of silicon, and develop the core technologies of research reactor. In this paper, the features of the process and nuclear material flow are reviewed and the material balance area (MBA) and key measurement point (KMP) are established based on the nuclear material flow. Also, this paper reviews the approach on safeguards and nuclear material accountancy at the facility level for Safeguards-by-Design at research reactor handling item count and bulk material. In this paper, MBA and KMPs are established through the analysis on facility features and major process at KJRR handling item count and bulk material. Also, this paper reviews the IAEA safeguards implementation and nuclear material accountancy at KJRR. It is necessary to discuss the safeguards approach on the fresh FM target assemblies and remaining uranium in the intermediate level liquid wastes.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

Science.gov (United States)

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

Value of contrast-enhanced MRI of breast after silicone implant

International Nuclear Information System (INIS)

Heinig, A.; Heywang-Koebrunner, S.H.; Viehweg, P.; Spielmann, R.P.; Lampe, D.; Buchmann, J.

1997-01-01

Early recognition of recurrence and work-up of clinically indeterminate lesions may be impaired after reconstruction with silicone implants due to superimposition of the implant or to scarring. This study was undertaken to evaluate the use of contrast-enhanced MRI in patients with silicone implant after breast cancer. Contrast-enhanded MRI was offered to 169 patients. Comparative two- to three-view mammography was also performed in 169 patients, as well as comparative sonography in 144 patients. Conventional imaging and clinical examination detected only 8/13 recurrences, whereas 12/13 were detected by MRI. One recurrence had been visible as a strongly enhancing 2-mm dot in a previous examination (2 years before), but was not called. It was therefore counted as false negative. In addition, multicentricity was detected by MRI alone in two of three cases. MRI correctly diagnosed scar tissue in all cases with indeterminate findings. However, due to false-positive calls caused by enhancing granulomas specificity could not be improved. Contrast-enhanded MRI allowed decisive additional information in our study group and improved the sensitivity significantly (concerning all diagnoses). Contrast-enhanded MRI allowed decisive additional information in our study group and improved the sensitivity significantly (concerning all diagnoses). Contrast-enhanded MRI is recommended in patients with diagnostic problems or high risk of recurrence after silicone implants. (orig.) [de

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Simultaneous determination of boron, carbon and nitrogen in silicon by deuteron activation analysis

International Nuclear Information System (INIS)

He, Shiyu; Wang, Yinsong; Jin, Baikang; Hua, Zhifen; Zhao, Kaihua

1984-01-01

The paper describes simultaneous determination of trace quantities of B, C and N in semiconductor silicon by nuclear reaction of 10 B(d, n) 11 C(T 1/2 = 20.3 min), 11 B(d, 2n) 11 C, 12 C(d, n) 13 N(T 1/2 = 9.96 min) and 14 N(d, n) 15 O(T 1/2 = 2.03 min) with deuterons from a 1.2 m cyclotron in our institute. An inert-gas fusion technique is adopted for rapid radiochemical separation after irradiation of the samples. 11 C, 13 N and 15 O are absorbed in ascarite 5A molecular sieve cooled in liquid nitrogen and Hopcalite reagent at a temperature of 650 deg C respectively. Positron Annihilation events of each produced nucleus are counted by a γ - γ coincidence measuring system. B, C and N contents of about several ten parts per billion in silicon are then calculated simultaneously by a relatively quantitative method. Relative standard deviation for C, B and N are less than +-50% respectively. This method is simple, rapid and sensitive for estimating light element content in silicon material. (author)

DeepMitosis: Mitosis detection via deep detection, verification and segmentation networks.

Science.gov (United States)

Li, Chao; Wang, Xinggang; Liu, Wenyu; Latecki, Longin Jan

2018-04-01

Mitotic count is a critical predictor of tumor aggressiveness in the breast cancer diagnosis. Nowadays mitosis counting is mainly performed by pathologists manually, which is extremely arduous and time-consuming. In this paper, we propose an accurate method for detecting the mitotic cells from histopathological slides using a novel multi-stage deep learning framework. Our method consists of a deep segmentation network for generating mitosis region when only a weak label is given (i.e., only the centroid pixel of mitosis is annotated), an elaborately designed deep detection network for localizing mitosis by using contextual region information, and a deep verification network for improving detection accuracy by removing false positives. We validate the proposed deep learning method on two widely used Mitosis Detection in Breast Cancer Histological Images (MITOSIS) datasets. Experimental results show that we can achieve the highest F-score on the MITOSIS dataset from ICPR 2012 grand challenge merely using the deep detection network. For the ICPR 2014 MITOSIS dataset that only provides the centroid location of mitosis, we employ the segmentation model to estimate the bounding box annotation for training the deep detection network. We also apply the verification model to eliminate some false positives produced from the detection model. By fusing scores of the detection and verification models, we achieve the state-of-the-art results. Moreover, our method is very fast with GPU computing, which makes it feasible for clinical practice. Copyright © 2018 Elsevier B.V. All rights reserved.

Standardization of 241Am by digital coincidence counting, liquid scintillation counting and defined solid angle counting

International Nuclear Information System (INIS)

Balpardo, C.; Capoulat, M.E.; Rodrigues, D.; Arenillas, P.

2010-01-01

The nuclide 241 Am decays by alpha emission to 237 Np. Most of the decays (84.6%) populate the excited level of 237 Np with energy of 59.54 keV. Digital coincidence counting was applied to standardize a solution of 241 Am by alpha-gamma coincidence counting with efficiency extrapolation. Electronic discrimination was implemented with a pressurized proportional counter and the results were compared with two other independent techniques: Liquid scintillation counting using the logical sum of double coincidences in a TDCR array and defined solid angle counting taking into account activity inhomogeneity in the active deposit. The results show consistency between the three methods within a limit of a 0.3%. An ampoule of this solution will be sent to the International Reference System (SIR) during 2009. Uncertainties were analysed and compared in detail for the three applied methods.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Colour segmentation of multi variants tuberculosis sputum images using self organizing map

Science.gov (United States)

Rulaningtyas, Riries; Suksmono, Andriyan B.; Mengko, Tati L. R.; Saptawati, Putri

2017-05-01

Lung tuberculosis detection is still identified from Ziehl-Neelsen sputum smear images in low and middle countries. The clinicians decide the grade of this disease by counting manually the amount of tuberculosis bacilli. It is very tedious for clinicians with a lot number of patient and without standardization for sputum staining. The tuberculosis sputum images have multi variant characterizations in colour, because of no standardization in staining. The sputum has more variants colour and they are difficult to be identified. For helping the clinicians, this research examined the Self Organizing Map method for colouring image segmentation in sputum images based on colour clustering. This method has better performance than k-means clustering which also tried in this research. The Self Organizing Map could segment the sputum images with y good result and cluster the colours adaptively.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Non-drainage scleral buckling with solid silicone elements

Directory of Open Access Journals (Sweden)

Pukhraj Rishi

2014-01-01

Full Text Available Background: With the increasing number of cataract surgeries, incidence of posterior segment complications including rhegmatogenous retinal detachment (RRD is likely to rise. Scleral buckling (SB surgery is an effective and less expensive option. The primary advantage of non-drainage procedure is avoidance of possible complications associated with trans-choroidal drainage. The aim of present study is to describe the clinical profile of subjects undergoing non-drainage SB surgery with solid silicone elements for RRD and analyze their treatment outcomes. Materials and Methods: This was a retrospective, non-randomized, interventional study at a tertiary care center. Three hundred and six eyes of 298 patients undergoing non-drainage SB surgery with solid silicone elements from year 2000 to 2006 were included. Inclusion criteria were primary RRD, peripheral depressible retinal break, media clarity affording peripheral retinal view and proliferative vitreo-retinopathy (PVR up to grade C2. Uni- and multivariate analyses was done to analyze factors affecting anatomical and visual outcomes. Statistical analysis was performed using SPSS Version 10. Results: Mean follow-up was 303 ± 393.33 days. Primary anatomical success was obtained in 279 (91.2% eyes; primary functional success in 286 (93.5% eyes. PVR (grade B or C, intraocular pressure <10 mm Hg and the inability to find a retinal break were significantly associated with final anatomical failure. Baseline vision ≤3/60 was significantly associated with poor visual recovery. Conclusions: SB surgery is reasonably safe and highly efficacious. Solid silicone elements are effective in non-drainage SB surgery. However, case selection is important.

Benjamin Thompson, Count Rumford Count Rumford on the nature of heat

CERN Document Server

Brown, Sanborn C

1967-01-01

Men of Physics: Benjamin Thompson - Count Rumford: Count Rumford on the Nature of Heat covers the significant contributions of Count Rumford in the fields of physics. Count Rumford was born with the name Benjamin Thompson on March 23, 1753, in Woburn, Massachusetts. This book is composed of two parts encompassing 11 chapters, and begins with a presentation of Benjamin Thompson's biography and his interest in physics, particularly as an advocate of an """"anti-caloric"""" theory of heat. The subsequent chapters are devoted to his many discoveries that profoundly affected the physical thought

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Highly segmented large-area hybrid photodiodes with bialkali photocathodes and enclosed VLSI readout electronics

CERN Document Server

Braem, André; Filthaut, Frank; Go, A; Joram, C; Weilhammer, Peter; Wicht, P; Dulinski, W; Séguinot, Jacques; Wenzel, H; Ypsilantis, Thomas

2000-01-01

We report on the principles, design, fabrication, and operation of a highly segmented, large-area hybrid photodiode, which is being developed in the framework of the LHCb RICH project. The device consists of a cylindrical, 127 mm diameter vacuum envelope capped with a spherical borosilicate UV-glass entrance window, with an active-to-total-area fraction of 81A fountain-focusing electron optics is used to demagnify the image onto a 50 mm diameter silicon sensor, containing 2048 pads of size 1*1 mm/sup 2/. (10 refs).

Optimization of the digital Silicon Photomultiplier for Cherenkov light detection

International Nuclear Information System (INIS)

Frach, T

2012-01-01

The Silicon Photomultiplier is a promising alternative to fast vacuum photodetectors. We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. Photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic has the added benefit of low power consumption and possible integration of data post-processing in the sensor. In this paper, we discuss the sensor architecture together with its characteristics, and its possible optimizations for applications requiring the detection of Cherenkov light.

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

Energy Technology Data Exchange (ETDEWEB)

Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

2006-09-21

Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

Counting cormorants

DEFF Research Database (Denmark)

Bregnballe, Thomas; Carss, David N; Lorentsen, Svein-Håkon

2013-01-01

This chapter focuses on Cormorant population counts for both summer (i.e. breeding) and winter (i.e. migration, winter roosts) seasons. It also explains differences in the data collected from undertaking ‘day’ versus ‘roost’ counts, gives some definitions of the term ‘numbers’, and presents two...

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

FogBank: a single cell segmentation across multiple cell lines and image modalities.

Science.gov (United States)

Chalfoun, Joe; Majurski, Michael; Dima, Alden; Stuelten, Christina; Peskin, Adele; Brady, Mary

2014-12-30

Many cell lines currently used in medical research, such as cancer cells or stem cells, grow in confluent sheets or colonies. The biology of individual cells provide valuable information, thus the separation of touching cells in these microscopy images is critical for counting, identification and measurement of individual cells. Over-segmentation of single cells continues to be a major problem for methods based on morphological watershed due to the high level of noise in microscopy cell images. There is a need for a new segmentation method that is robust over a wide variety of biological images and can accurately separate individual cells even in challenging datasets such as confluent sheets or colonies. We present a new automated segmentation method called FogBank that accurately separates cells when confluent and touching each other. This technique is successfully applied to phase contrast, bright field, fluorescence microscopy and binary images. The method is based on morphological watershed principles with two new features to improve accuracy and minimize over-segmentation. First, FogBank uses histogram binning to quantize pixel intensities which minimizes the image noise that causes over-segmentation. Second, FogBank uses a geodesic distance mask derived from raw images to detect the shapes of individual cells, in contrast to the more linear cell edges that other watershed-like algorithms produce. We evaluated the segmentation accuracy against manually segmented datasets using two metrics. FogBank achieved segmentation accuracy on the order of 0.75 (1 being a perfect match). We compared our method with other available segmentation techniques in term of achieved performance over the reference data sets. FogBank outperformed all related algorithms. The accuracy has also been visually verified on data sets with 14 cell lines across 3 imaging modalities leading to 876 segmentation evaluation images. FogBank produces single cell segmentation from confluent cell

Simulation of a silicon neutron detector coated with TiB2 absorber

International Nuclear Information System (INIS)

Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

2012-01-01

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

Short communication: Repeatability of differential goat bulk milk culture and associations with somatic cell count, total bacterial count, and standard plate count.

Science.gov (United States)

Koop, G; Dik, N; Nielen, M; Lipman, L J A

2010-06-01

The aims of this study were to assess how different bacterial groups in bulk milk are related to bulk milk somatic cell count (SCC), bulk milk total bacterial count (TBC), and bulk milk standard plate count (SPC) and to measure the repeatability of bulk milk culturing. On 53 Dutch dairy goat farms, 3 bulk milk samples were collected at intervals of 2 wk. The samples were cultured for SPC, coliform count, and staphylococcal count and for the presence of Staphylococcus aureus. Furthermore, SCC (Fossomatic 5000, Foss, Hillerød, Denmark) and TBC (BactoScan FC 150, Foss) were measured. Staphylococcal count was correlated to SCC (r=0.40), TBC (r=0.51), and SPC (r=0.53). Coliform count was correlated to TBC (r=0.33), but not to any of the other variables. Staphylococcus aureus did not correlate to SCC. The contribution of the staphylococcal count to the SPC was 31%, whereas the coliform count comprised only 1% of the SPC. The agreement of the repeated measurements was low. This study indicates that staphylococci in goat bulk milk are related to SCC and make a significant contribution to SPC. Because of the high variation in bacterial counts, repeated sampling is necessary to draw valid conclusions from bulk milk culturing. 2010 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

1980, a revolution in silicon detectors, from energy spectrometer to radiation imager: Some technical and historical details

International Nuclear Information System (INIS)

Heijne, Erik H.M.

2008-01-01

Silicon nuclear particle detectors were introduced just 50 years ago, after single crystal manufacturing was mastered. A major change took place around 1980 when the 'planar' Metal Oxide Semiconductor (MOS) technology developed in microelectronics was systematically applied also in detector construction. With the simultaneous introduction of matched readout chips this eventually would lead to pixelized matrix detectors that function as radiation imaging devices. The critical contributions to this revolution by Josef Kemmer and Paul Burger are described. Performance of the segmented planar technology detectors improved significantly in comparison with the earlier spectrometric diodes. With efficient industrial support the use of silicon detectors in many new applications has become possible and detector systems with a sensitive area of several tens to >100m 2 have been constructed recently

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Novel techniques for enhancement and segmentation of acne vulgaris lesions.

Science.gov (United States)

Malik, A S; Humayun, J; Kamel, N; Yap, F B-B

2014-08-01

More than 99% acne patients suffer from acne vulgaris. While diagnosing the severity of acne vulgaris lesions, dermatologists have observed inter-rater and intra-rater variability in diagnosis results. This is because during assessment, identifying lesion types and their counting is a tedious job for dermatologists. To make the assessment job objective and easier for dermatologists, an automated system based on image processing methods is proposed in this study. There are two main objectives: (i) to develop an algorithm for the enhancement of various acne vulgaris lesions; and (ii) to develop a method for the segmentation of enhanced acne vulgaris lesions. For the first objective, an algorithm is developed based on the theory of high dynamic range (HDR) images. The proposed algorithm uses local rank transform to generate the HDR images from a single acne image followed by the log transformation. Then, segmentation is performed by clustering the pixels based on Mahalanobis distance of each pixel from spectral models of acne vulgaris lesions. Two metrics are used to evaluate the enhancement of acne vulgaris lesions, i.e., contrast improvement factor (CIF) and image contrast normalization (ICN). The proposed algorithm is compared with two other methods. The proposed enhancement algorithm shows better result than both the other methods based on CIF and ICN. In addition, sensitivity and specificity are calculated for the segmentation results. The proposed segmentation method shows higher sensitivity and specificity than other methods. This article specifically discusses the contrast enhancement and segmentation for automated diagnosis system of acne vulgaris lesions. The results are promising that can be used for further classification of acne vulgaris lesions for final grading of the lesions. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Assessing neutron generator output using neutron activation of silicon

International Nuclear Information System (INIS)

Kehayias, Pauli M.; Kehayias, Joseph J.

2007-01-01

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the 28 Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10 3 n/s/cm 2 ± 5%, which is consistent with the manufacturer's specifications

Assessing neutron generator output using neutron activation of silicon

Energy Technology Data Exchange (ETDEWEB)

Kehayias, Pauli M. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States); Kehayias, Joseph J. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States)]. E-mail: joseph.kehayias@tufts.edu

2007-08-15

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the {sup 28}Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10{sup 3} n/s/cm{sup 2} {+-} 5%, which is consistent with the manufacturer's specifications.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

Science.gov (United States)

Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

1993-01-01

Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

Tumor segmentation of whole-body magnetic resonance imaging in neurofibromatosis type 1 patients: tumor burden correlates

Energy Technology Data Exchange (ETDEWEB)

Heffler, Michael A.; Xi, Yin; Chhabra, Avneesh [University of Texas Southwestern Medical Center, Department of Radiology, Dallas, TX (United States); Le, Lu Q. [University of Texas Southwestern Medical Center, Department of Dermatology, Dallas, TX (United States)

2017-01-15

Segmentation of whole-body MRI (WBMRI) to assess the feasibility, quantitate the total tumor volume (tumor burden) in patients with neurofibromatosis type 1 (NF1) and examine associations with demographic, disease-related and anthropomorphic features. A consecutive series of patients with NF1 underwent WBMRI and were reviewed for tumors. Tumors were segmented using a semiautomated software-based tool. Tumors were classified as superficial or deep and discrete or plexiform. Segmentation times were recorded. Segmentation yielded the quantity and tumor burden of superficial, internal and plexiform tumors. Correlations between segmentation data and demographic, disease-related and anthropomorphic features were examined. Fifteen patients were evaluated (42.3 ± 13.6 years, 10 female, 5 male). Segmentation times were a median of 30 min and yielded 2,328 tumors (1,582 superficial, 746 internal and 23 plexiform). One tumor was malignant. Tumor counts ranged from 14 to 397. Tumor burden ranged from 6.95 cm3 to 571 cm3. Individual tumor volume ranged from 0.0120 cm3 to 298 cm3. Significant correlation was found between the total volume of superficial tumors and height (ρ = 0.5966, p < 0.02). Male patients had higher overall tumor burdens (p < 0.05) and higher superficial tumor burden (p < 0.03). Patients with negative family history had more tumors (p < 0.05). Segmentation of WBMRI in patients with NF1 is feasible and elucidates meaningful relationships among disease phenotype, anthropomorphic and demographic features. (orig.)

Tumor segmentation of whole-body magnetic resonance imaging in neurofibromatosis type 1 patients: tumor burden correlates

International Nuclear Information System (INIS)

Heffler, Michael A.; Xi, Yin; Chhabra, Avneesh; Le, Lu Q.

2017-01-01

Segmentation of whole-body MRI (WBMRI) to assess the feasibility, quantitate the total tumor volume (tumor burden) in patients with neurofibromatosis type 1 (NF1) and examine associations with demographic, disease-related and anthropomorphic features. A consecutive series of patients with NF1 underwent WBMRI and were reviewed for tumors. Tumors were segmented using a semiautomated software-based tool. Tumors were classified as superficial or deep and discrete or plexiform. Segmentation times were recorded. Segmentation yielded the quantity and tumor burden of superficial, internal and plexiform tumors. Correlations between segmentation data and demographic, disease-related and anthropomorphic features were examined. Fifteen patients were evaluated (42.3 ± 13.6 years, 10 female, 5 male). Segmentation times were a median of 30 min and yielded 2,328 tumors (1,582 superficial, 746 internal and 23 plexiform). One tumor was malignant. Tumor counts ranged from 14 to 397. Tumor burden ranged from 6.95 cm3 to 571 cm3. Individual tumor volume ranged from 0.0120 cm3 to 298 cm3. Significant correlation was found between the total volume of superficial tumors and height (ρ = 0.5966, p < 0.02). Male patients had higher overall tumor burdens (p < 0.05) and higher superficial tumor burden (p < 0.03). Patients with negative family history had more tumors (p < 0.05). Segmentation of WBMRI in patients with NF1 is feasible and elucidates meaningful relationships among disease phenotype, anthropomorphic and demographic features. (orig.)

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

Repeatability of differential goat bulk milk culture and associations with somatic cell count, total bacterial count, and standard plate count

NARCIS (Netherlands)

Koop, G.; Dik, N.; Nielen, M.; Lipman, L.J.A.

2010-01-01

The aims of this study were to assess how different bacterial groups in bulk milk are related to bulk milk somatic cell count (SCC), bulk milk total bacterial count (TBC), and bulk milk standard plate count (SPC) and to measure the repeatability of bulk milk culturing. On 53 Dutch dairy goat farms,

Brookhaven segment interconnect

International Nuclear Information System (INIS)

Morse, W.M.; Benenson, G.; Leipuner, L.B.

1983-01-01

We have performed a high energy physics experiment using a multisegment Brookhaven FASTBUS system. The system was composed of three crate segments and two cable segments. We discuss the segment interconnect module which permits communication between the various segments

Polarization of silicon detectors by minimum ionizing particles

CERN Document Server

Dezillie, B; Li, Z; Verbitskaya, E

2000-01-01

This work presents quantitative predictions of the properties of highly irradiated (e.g. by high-energy particles, up to an equivalent fluence of 1x10 sup 1 sup 4 n cm sup - sup 2) silicon detectors operating at cryogenic temperature. It is shown that the exposure to the Minimum Ionising Particle (MIP) with counting rates of about 10 sup 6 cm sup - sup 2 s sup - sup 1 can influence the electric field distribution in the detector's sensitive volume. This change in the electric field distribution and its effect on the charge collection efficiency are discussed in the frame of a model based on trapping of carriers generated by MIPs. The experiment was performed at 87 K with an infrared (1030 nm) laser to simulate MIPs.

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Standardization of {sup 241}Am by digital coincidence counting, liquid scintillation counting and defined solid angle counting

Energy Technology Data Exchange (ETDEWEB)

Balpardo, C., E-mail: balpardo@cae.cnea.gov.a [Laboratorio de Metrologia de Radioisotopos, CNEA, Buenos Aires (Argentina); Capoulat, M.E.; Rodrigues, D.; Arenillas, P. [Laboratorio de Metrologia de Radioisotopos, CNEA, Buenos Aires (Argentina)

2010-07-15

The nuclide {sup 241}Am decays by alpha emission to {sup 237}Np. Most of the decays (84.6%) populate the excited level of {sup 237}Np with energy of 59.54 keV. Digital coincidence counting was applied to standardize a solution of {sup 241}Am by alpha-gamma coincidence counting with efficiency extrapolation. Electronic discrimination was implemented with a pressurized proportional counter and the results were compared with two other independent techniques: Liquid scintillation counting using the logical sum of double coincidences in a TDCR array and defined solid angle counting taking into account activity inhomogeneity in the active deposit. The results show consistency between the three methods within a limit of a 0.3%. An ampoule of this solution will be sent to the International Reference System (SIR) during 2009. Uncertainties were analysed and compared in detail for the three applied methods.

Active Segmentation.

Science.gov (United States)

Mishra, Ajay; Aloimonos, Yiannis

2009-01-01

The human visual system observes and understands a scene/image by making a series of fixations. Every fixation point lies inside a particular region of arbitrary shape and size in the scene which can either be an object or just a part of it. We define as a basic segmentation problem the task of segmenting that region containing the fixation point. Segmenting the region containing the fixation is equivalent to finding the enclosing contour- a connected set of boundary edge fragments in the edge map of the scene - around the fixation. This enclosing contour should be a depth boundary.We present here a novel algorithm that finds this bounding contour and achieves the segmentation of one object, given the fixation. The proposed segmentation framework combines monocular cues (color/intensity/texture) with stereo and/or motion, in a cue independent manner. The semantic robots of the immediate future will be able to use this algorithm to automatically find objects in any environment. The capability of automatically segmenting objects in their visual field can bring the visual processing to the next level. Our approach is different from current approaches. While existing work attempts to segment the whole scene at once into many areas, we segment only one image region, specifically the one containing the fixation point. Experiments with real imagery collected by our active robot and from the known databases 1 demonstrate the promise of the approach.

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

GeoSegmenter: A statistically learned Chinese word segmenter for the geoscience domain

Science.gov (United States)

Huang, Lan; Du, Youfu; Chen, Gongyang

2015-03-01

Unlike English, the Chinese language has no space between words. Segmenting texts into words, known as the Chinese word segmentation (CWS) problem, thus becomes a fundamental issue for processing Chinese documents and the first step in many text mining applications, including information retrieval, machine translation and knowledge acquisition. However, for the geoscience subject domain, the CWS problem remains unsolved. Although a generic segmenter can be applied to process geoscience documents, they lack the domain specific knowledge and consequently their segmentation accuracy drops dramatically. This motivated us to develop a segmenter specifically for the geoscience subject domain: the GeoSegmenter. We first proposed a generic two-step framework for domain specific CWS. Following this framework, we built GeoSegmenter using conditional random fields, a principled statistical framework for sequence learning. Specifically, GeoSegmenter first identifies general terms by using a generic baseline segmenter. Then it recognises geoscience terms by learning and applying a model that can transform the initial segmentation into the goal segmentation. Empirical experimental results on geoscience documents and benchmark datasets showed that GeoSegmenter could effectively recognise both geoscience terms and general terms.

Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

CERN Document Server

Allport, P.P

2012-01-01

The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their pro...

The GLAST silicon-strip tracking system

International Nuclear Information System (INIS)

Johnson, Robert P.

2000-01-01

The GLAST instrument concept is a gamma-ray pair conversion telescope that uses silicon microstrip detector technology to track the electron-positron pairs resulting from gamma-ray conversions in thin lead foils. A cesium iodide calorimeter following the tracker is used to measure the gamma-ray energy. Silicon strip technology is mature and robust, with an excellent heritage in space science and particle physics. It has many characteristics important for optimal performance of a pair conversion telescope, including high efficiency in thin detector planes, low noise, and excellent resolution and two-track separation. The large size of GLAST and high channel count in the tracker puts demands on the readout technology to operate at very low power, yet with sufficiently low noise occupancy to allow self triggering. A prototype system employing custom-designed ASIC's has been built and tested that meets the design goal of approximately 200 W per channel power consumption with a noise occupancy of less than one hit per trigger per 10,000 channels. Detailed design of the full-scale tracker is well advanced, with non-flight prototypes built for all components, and a complete 50,000 channel engineering demonstration tower module is currently under construction and will be tested in particle beams in late 1999. The flight-instrument conceptual design is for a 4x4 array of tower modules with an aperture of 2.9 m2 and an effective area of greater than 8000 cm2

The GLAST Silicon-Strip Tracking System

International Nuclear Information System (INIS)

Johnson, R

2004-01-01

The GLAST instrument concept is a gamma-ray pair conversion telescope that uses silicon microstrip detector technology to track the electron-positron pairs resulting from gamma ray conversions in thin lead foils. A cesium iodide calorimeter following the tracker is used to measure the gamma-ray energy. Silicon strip technology is mature and robust, with an excellent heritage in space science and particle physics. It has many characteristics important for optimal performance of a pair conversion telescope, including high efficiency in thin detector planes, low noise, and excellent resolution and two-track separation. The large size of GLAST and high channel count in the tracker puts demands on the readout technology to operate at very low power, yet with sufficiently low noise occupancy to allow self triggering. A prototype system employing custom-designed ASIC's has been built and tested that meets the design goal of approximately 200 (micro)W per channel power consumption with a noise occupancy of less than one hit per trigger per 10,000 channels. Detailed design of the full-scale tracker is well advanced, with non-flight prototypes built for all components, and a complete 50,000 channel engineering demonstration tower module is currently under construction and will be tested in particle beams in late 1999. The flight-instrument conceptual design is for a 4 x 4 array of tower modules with an aperture of 2.9 m 2 and an effective area of greater than 8000 cm 2

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Status of the Top and Bottom Counting Detectors for the ISS-CREAM Experiment

Science.gov (United States)

Park, J. M.; ISS-CREAM Collaboration

2017-11-01

It is important to measure the cosmic ray spectra to study the origin, acceleration and propagation mechanisms of high-energy cosmic rays. A payload of the Cosmic Ray Energetics And Mass experiment is scheduled to be launched in 2017 to the International Space Station for measuring cosmic ray elemental spectra at energies beyond the reach of balloon instruments. Top Counting Detector and Bottom Counting Detector (T/BCD) as a two-dimensional detector are to separate electrons from protons for electron/gamma-ray physics. The T/BCD each consists of a plastic scintillator read out by 20 by 20 photodiodes and is placed before and after the Calorimeter, respectively. Energy and hit information of the T/BCD can distinguish shower profiles of electrons and protons, which show narrower and shorter showers from electrons at a given energy. The T/BCD performance has been studied with the Silicon Charge Detector and the calorimeter by using a GEANT3 + FLUKA 3.21 simulation package. By comparing the number of hits and shower width distributions between electrons and protons, we have studied optimal parameters for the e/p separation.

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Single-segment and double-segment INTACS for post-LASIK ectasia.

Directory of Open Access Journals (Sweden)

Hassan Hashemi

2014-09-01

Full Text Available The objective of the present study was to compare single segment and double segment INTACS rings in the treatment of post-LASIK ectasia. In this interventional study, 26 eyes with post-LASIK ectasia were assessed. Ectasia was defined as progressive myopia regardless of astigmatism, along with topographic evidence of inferior steepening of the cornea after LASIK. We excluded those with a history of intraocular surgery, certain eye conditions, and immune disorders, as well as monocular, pregnant and lactating patients. A total of 11 eyes had double ring and 15 eyes had single ring implantation. Visual and refractive outcomes were compared with preoperative values based on the number of implanted INTACS rings. Pre and postoperative spherical equivalent were -3.92 and -2.29 diopter (P=0.007. The spherical equivalent decreased by 1 ± 3.2 diopter in the single-segment group and 2.56 ± 1.58 diopter in the double-segment group (P=0.165. Mean preoperative astigmatism was 2.38 ± 1.93 diopter which decreased to 2.14 ± 1.1 diopter after surgery (P=0.508; 0.87 ± 1.98 diopter decrease in the single-segment group and 0.67 ± 1.2 diopter increase in the double-segment group (P=0.025. Nineteen patients (75% gained one or two lines, and only three, who were all in the double-segment group, lost one or two lines of best corrected visual acuity. The spherical equivalent and vision significantly decreased in all patients. In these post-LASIK ectasia patients, the spherical equivalent was corrected better with two segments compared to single segment implantation; nonetheless, the level of astigmatism in the single-segment group was significantly better than that in the double-segment group.

Assessment of frequency and duration of point counts when surveying for golden eagle presence

Science.gov (United States)

Skipper, Ben R.; Boal, Clint W.; Tsai, Jo-Szu; Fuller, Mark R.

2017-01-01

We assessed the utility of the recommended golden eagle (Aquila chrysaetos) survey methodology in the U.S. Fish and Wildlife Service 2013 Eagle Conservation Plan Guidance. We conducted 800-m radius, 1-hr point-count surveys broken into 20-min segments, during 2 sampling periods in 3 areas within the Intermountain West of the United States over 2 consecutive breeding seasons during 2012 and 2013. Our goal was to measure the influence of different survey time intervals and sampling periods on detectability and use estimates of golden eagles among different locations. Our results suggest that a less intensive effort (i.e., survey duration shorter than 1 hr and point-count survey radii smaller than 800 m) would likely be inadequate for rigorous documentation of golden eagle occurrence pre- or postconstruction of wind energy facilities. Results from a simulation analysis of detection probabilities and survey effort suggest that greater temporal and spatial effort could make point-count surveys more applicable for evaluating golden eagle occurrence in survey areas; however, increased effort would increase financial costs associated with additional person-hours and logistics (e.g., fuel, lodging). Future surveys can benefit from a pilot study and careful consideration of prior information about counts or densities of golden eagles in the survey area before developing a survey design. If information is lacking, survey planning may be best served by assuming low detection rates and increasing the temporal and spatial effort.

Cherenkov TOF PET with silicon photomultipliers

Science.gov (United States)

Dolenec, R.; Korpar, S.; Križan, P.; Pestotnik, R.

2015-12-01

As previously demonstrated, an excellent timing resolution below 100 ps FWHM is possible in time-of-flight positron emission tomography (TOF PET) if the detection method is based on the principle of detecting photons of Cherenkov light, produced in a suitable material and detected by microchannel plate photomultipliers (MCP PMTs). In this work, the silicon photomultipliers (SiPMs) were tested for the first time as the photodetectors in Cherenkov TOF PET. The high photon detection efficiency (PDE) of SiPMs led to a large improvement in detection efficiency. On the other hand, the time response of currently available SiPMs is not as good as that of MCP PMTs. The SiPM dark counts introduce a new source of random coincidences in Cherenkov method, which would be overwhelming with present SiPM technology at room temperature. When the apparatus was cooled, its performance significantly improved.

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

International Nuclear Information System (INIS)

Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

2012-01-01

1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Edge detection of optical subaperture image based on improved differential box-counting method

Science.gov (United States)

Li, Yi; Hui, Mei; Liu, Ming; Dong, Liquan; Kong, Lingqin; Zhao, Yuejin

2018-01-01

Optical synthetic aperture imaging technology is an effective approach to improve imaging resolution. Compared with monolithic mirror system, the image of optical synthetic aperture system is often more complex at the edge, and as a result of the existence of gap between segments, which makes stitching becomes a difficult problem. So it is necessary to extract the edge of subaperture image for achieving effective stitching. Fractal dimension as a measure feature can describe image surface texture characteristics, which provides a new approach for edge detection. In our research, an improved differential box-counting method is used to calculate fractal dimension of image, then the obtained fractal dimension is mapped to grayscale image to detect edges. Compared with original differential box-counting method, this method has two improvements as follows: by modifying the box-counting mechanism, a box with a fixed height is replaced by a box with adaptive height, which solves the problem of over-counting the number of boxes covering image intensity surface; an image reconstruction method based on super-resolution convolutional neural network is used to enlarge small size image, which can solve the problem that fractal dimension can't be calculated accurately under the small size image, and this method may well maintain scale invariability of fractal dimension. The experimental results show that the proposed algorithm can effectively eliminate noise and has a lower false detection rate compared with the traditional edge detection algorithms. In addition, this algorithm can maintain the integrity and continuity of image edge in the case of retaining important edge information.

HEPS-BPIX, a single photon counting pixel detector with a high frame rate for the HEPS project

Energy Technology Data Exchange (ETDEWEB)

Wei, Wei, E-mail: weiw@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); State Key Laboratory of Particle Detection and Electronics, Beijing 100049 (China); Zhang, Jie; Ning, Zhe; Lu, Yunpeng; Fan, Lei; Li, Huaishen; Jiang, Xiaoshan; Lan, Allan K.; Ouyang, Qun; Wang, Zheng; Zhu, Kejun; Chen, Yuanbo [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); State Key Laboratory of Particle Detection and Electronics, Beijing 100049 (China); Liu, Peng [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

2016-11-01

China's next generation light source, named the High Energy Photon Source (HEPS), is currently under construction. HEPS-BPIX (HEPS-Beijing PIXel) is a dedicated pixel readout chip that operates in single photon counting mode for X-ray applications in HEPS. Designed using CMOS 0.13 µm technology, the chip contains a matrix of 104×72 pixels. Each pixel measures 150 µm×150 µm and has a counting depth of 20 bits. A bump-bonded prototyping detector module with a 300-µm thick silicon sensor was tested in the beamline of Beijing Synchrotron Radiation Facility. A fast stream of X-ray images was demonstrated, and a frame rate of 1.2 kHz was proven, with a negligible dead time. The test results showed an equivalent noise charge of 115 e{sup −} rms after bump bonding and a threshold dispersion of 55 e{sup −} rms after calibration.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Fused silica segments: a possible solution for x-ray telescopes with very high angular resolution like Lynx/XRS

Science.gov (United States)

Salmaso, Bianca; Basso, Stefano; Civitani, Marta; Ghigo, Mauro; Hołyszko, Joanna; Spiga, Daniele; Vecchi, Gabriele; Pareschi, Giovanni

2017-09-01

In order to look beyond Chandra, the Lynx/XRS mission has been proposed in USA and is currently studied by NASA. The optic will have an effective area of 2.5 m2 and an angular resolution of 0.5 arcsec HEW at 1 keV. In order to fulfill these requirements different technologies are considered, with the approaches of both full and segmented shells (that, possibly, can be also combined together). Concerning the production of segmented mirrors, a variety of thin substrates (glass, metal, silicon) are envisaged, that can be produced using both direct polishing or replication methods. Innovative post-fabrication correction methods (such as piezoelectric or magneto-restrictive film actuators on the back surface, differential deposition, ion implantation) are being also considered in order to reach the final tolerances. In this paper we are presenting a technology development based on fused silica (SiO2) segmented substrates, owing the low coefficient of thermal expansion of Fused Silica and its high chemical stability compared to other glasses. Thin SiO2 segmented substrates (typically 2 mm thick) are figured by direct polishing combined with final profile ion figuring correction, while the roughness reduction is reached with pitch tools. For the profile and roughness correction, the segments are glued to a substrate. In this paper we present the current status of this technology.

Clean Hands Count

Medline Plus

Full Text Available ... Like this video? Sign in to make your opinion count. Sign in 131 2 Don't like this video? Sign in to make your opinion count. Sign in 3 Loading... Loading... Transcript The ...

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

[The influence of a new surface treatment of silicone intracoular lenses with fluoralkylsitan on the adherence of endophthalmitic bacteria in vitro

Science.gov (United States)

Kienast, A; Menz, D-H; Dresp, J; Klinger, M; Bunse, A; Ohgke, H; Solbach, W; Laqua, H; Kämmerer, R; Hoerauf, H

2003-10-01

Dynasilan is a fluoroalkylsilan which is able to bind to surface active molecules of intraocular lenses (IOLs), thereby offering a new option for surface modification of silicone lenses. The purpose of this in vitro study was to investigate the influence of this new surface treatment on the adherence of two typical endophthalmitis-inducing bacteria ( Staphylococcus epidermidis, Propionibacterium acnes). A total of 14 Dynasilan-treated and 14 untreated silicone lenses were incubated at 37 degrees C for 24 h in brain heart infusion broth (10(8) CFU/ml) either with Staphylococcus epidermidis or with Propionibacterium acnes for 1 h. Subsequently, the adherent bacteria were resuspended using ultrasonification at 35 kHz for 3 x 45 s. After a dilution series and incubation at 37 degrees C for 24 h or 3 days the colonies were counted. On untreated IOLs incubated with Staphylococcus epidermidis the average number of bacteria was 3.6 x 10(7)/ml, and on treated IOLs the number of counted colonies was reduced to 1.09 x 10(7)/ml. Incubated with Propionibacterium acnes the average number of adherent bacteria on untreated IOLs was 4.75 x 10(4)/ml and on modified IOLs the number was reduced to 2.94 x 10(4)/ml. Dynasilan surface treatment may reduce the adherence of Staphylococcus epidermidis and Propionibacterium acnes on silicone intraocular lenses. Further studies regarding the stability of this treatment, its biocompatibility and influence on lens epithelial cell adhesion are in progress.

Noun Countability; Count Nouns and Non-count Nouns, What are the Syntactic Differences Between them?

Directory of Open Access Journals (Sweden)

Azhar A. Alkazwini

2016-11-01

Full Text Available Words that function as the subjects of verbs, objects of verbs or prepositions and which can have a plural form and possessive ending are known as nouns. They are described as referring to persons, places, things, states, or qualities and might also be used as an attributive modifier. In this paper, classes and subclasses of nouns shall be presented, then, noun countability branching into count and non-count nous shall be discussed. A number of present examples illustrating differences between count and non-count nouns and this includes determiner-head-co-occurrence restrictions of number, subject-verb agreement, in addition to some exceptions to this agreement rule shall be discussed. Also, the lexically inherent number in nouns and how inherently plural nouns are classified in terms of (+/- count are illustrated. This research will discuss partitive construction of count and non-count nouns, nouns as attributive modifier and, finally, conclude with the fact that there are syntactic difference between count and non-count in the English Language.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Timing of silicone stent removal in patients with post-tuberculosis bronchial stenosis.

Science.gov (United States)

Eom, Jung Seop; Kim, Hojoong; Park, Hye Yun; Jeon, Kyeongman; Um, Sang-Won; Koh, Won-Jung; Suh, Gee Young; Chung, Man Pyo; Kwon, O Jung

2013-10-01

In patients with post-tuberculosis bronchial stenosis (PTBS), the severity of bronchial stenosis affects the restenosis rate after the silicone stent is removed. In PTBS patients with incomplete bronchial obstruction, who had a favorable prognosis, the timing of stent removal to ensure airway patency is not clear. We evaluated the time for silicone stent removal in patients with incomplete PTBS. A retrospective study examined PTBS patients who underwent stenting and removal of a silicone stent. Incomplete bronchial stenosis was defined as PTBS other than total bronchial obstruction, which had a luminal opening at the stenotic segment on bronchoscopic intervention. The duration of stenting was defined as the interval from stent insertion to removal. The study included 44 PTBS patients and the patients were grouped at intervals of 6 months according to the duration of stenting. Patients stented for more than 12 months had a significantly lower restenosis rate than those stented for less than 12 months (4% vs. 35%, P = 0.009). Multiple logistic regression revealed an association between stenting for more than 12 months and a low restenosis rate (odds ratio 12.095; 95% confidence interval 1.097-133.377). Moreover, no restenosis was observed in PTBS patients when the stent was placed more than 14 months previously. In patients with incomplete PTBS, stent placement for longer than 12 months reduced restenosis after stent removal.

Clean Hands Count

Medline Plus

Full Text Available ... starting stop Loading... Watch Queue Queue __count__/__total__ It’s YouTube. Uninterrupted. Loading... Want music and videos with ... ads? Get YouTube Red. Working... Not now Try it free Find out why Close Clean Hands Count ...

A high rate, low noise, x-ray silicon strip detector system

International Nuclear Information System (INIS)

Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

1993-11-01

An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

SensL B-Series and C-Series silicon photomultipliers for time-of-flight positron emission tomography

Energy Technology Data Exchange (ETDEWEB)

O' Neill, K., E-mail: koneill@sensl.com; Jackson, C., E-mail: cjackson@sensl.com

2015-07-01

Silicon photomultipliers from SensL are designed for high performance, uniformity and low cost. They demonstrate peak photon detection efficiency of 41% at 420 nm, which is matched to the output spectrum of cerium doped lutetium orthosilicate. Coincidence resolving time of less than 220 ps is demonstrated. New process improvements have lead to the development of C-Series SiPM which reduces the dark noise by over an order of magnitude. In this paper we will show characterization test results which include photon detection efficiency, dark count rate, crosstalk probability, afterpulse probability and coincidence resolving time comparing B-Series to the newest pre-production C-Series. Additionally we will discuss the effect of silicon photomultiplier microcell size on coincidence resolving time allowing the optimal microcell size choice to be made for time of flight positron emission tomography systems.

Segmentation of images for gingival growth measurement

Science.gov (United States)

Kim, Dong-Il; Wilson, Joseph N.

1992-12-01

The ability to measure gingival volume growth from dental casts would provide a valuable resource for periodontists. This problem is attractive from a computer vision standpoint due to the complexities of data acquisition, segmentation of gingival and tooth surfaces and boundaries, and extraction of features (such as tooth axes) to help solve the correspondence problem for multiple casts. In this paper, a structured light 3-D range finder is used to collect raw data. The most complicated subtask is that of detecting discontinuities such as the gingival margin. Discontinuity detection is hindered both by cast anomalies (such as bubbles and holes generated during the process of dental impression) and by the subtle nature of the discontinuities themselves. First, we discuss an approach to segmenting a dental cast into tooth and gingival units using depth and orientation discontinuities. The visible cast surface is reconstructed by obtaining the minimum of a parameterized functional. The first derivative of the energy functional (which corresponds to the Euler-Lagrange equation) is solved using the multigrid methods. both orientation and depth discontinuities are detected by adding a discrete discontinuity functional to the energy functional. The principal axes and boundaries of the teeth provide the information necessary to determine the region to be measured in estimating gingival growth. Finally, voxels corresponding to growth regions are counted to measure the target volume.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Accounting for segment correlations in segmented gamma-ray scans

International Nuclear Information System (INIS)

Sheppard, G.A.; Prettyman, T.H.; Piquette, E.C.

1994-01-01

In a typical segmented gamma-ray scanner (SGS), the detector's field of view is collimated so that a complete horizontal slice or segment of the desired thickness is visible. Ordinarily, the collimator is not deep enough to exclude gamma rays emitted from sample volumes above and below the segment aligned with the collimator. This can lead to assay biases, particularly for certain radioactive-material distributions. Another consequence of the collimator's low aspect ratio is that segment assays at the top and bottom of the sample are biased low because the detector's field of view is not filled. This effect is ordinarily countered by placing the sample on a low-Z pedestal and scanning one or more segment thicknesses below and above the sample. This takes extra time, however, We have investigated a number of techniques that both account for correlated segments and correct for end effects in SGS assays. Also, we have developed an algorithm that facilitates estimates of assay precision. Six calculation methods have been compared by evaluating the results of thousands of simulated, assays for three types of gamma-ray source distribution and ten masses. We will report on these computational studies and their experimental verification

A digital X-ray imaging system based on silicon strip detectors working in edge-on configuration

Energy Technology Data Exchange (ETDEWEB)

Bolanos, L. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Boscardin, M. [IRST, Fondazione Bruno Kessler, Via Sommarive 18, Povo, 38100 Trento (Italy); Cabal, A.E. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Diaz, M. [InSTEC, Ave. Salvador Allende esq. Luaces, Quinta de los Molinos, Ciudad Habana (Cuba); Grybos, P.; Maj, P. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Prino, F. [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Via P. Giuria 1, 10125 Torino (Italy); Ramello, L. [Dipartimento di Scienze e Tecnologie Avanzate, Universita del Piemonte Orientale, Via T. Michel 11, 15100 Alessandria (Italy)], E-mail: luciano.ramello@mfn.unipmn.it; Szczygiel, R. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland)

2009-09-21

We present the energy resolution and imaging performance of a digital X-ray imaging system based on a 512-strip silicon strip detector (SSD) working in the edge-on configuration. The SSDs tested in the system are 300 {mu}m thick with 1 or 2-cm-long strips and 100 {mu}m pitch. To ensure a very small dead area of the SSD working in edge-on configuration, the detector is cut perpendicular to the strips at a distance of only 20 {mu}m from the end of the strips. The 512-strip silicon detector is read out by eight 64-channel integrated circuits called DEDIX [Grybos et al., IEEE Trans. Nucl. Sci. NS-54 (2007) 1207]. The DEDIX IC operates in a single photon counting mode with two independent amplitude discriminators per channel. The readout electronic channel connected to a detector with effective input capacitance of about 2 pF has an average equivalent noise charge (ENC) of about 163 el. rms and is able to count 1 Mcps of average rate of input pulses. The system consisting of 512 channels has an excellent channel-to-channel uniformity-the effective threshold spread calculated to the charge-sensitive amplifier inputs is 12 el. rms (at one sigma level). With this system a few test images of a phantom have been taken in the 10-30 keV energy range.

Salt stress and exogenous silicon influence physiological and anatomical features of in vitro-grown cape gooseberry

Directory of Open Access Journals (Sweden)

Renata Alves Lara Silva Rezende

2017-04-01

Full Text Available ABSTRACT: Salt stress is one of several major abiotic stresses that affect plant growth and development, and there are many evidences that silicon can ameliorate the injuries caused by high salinity. This study presents the results of an assay concerning: (1 the effect of in vitro NaCl-induced salt stress in cape gooseberry plants and (2 the possible mitigating effect of silicon in saline conditions. For that, nodal segments were inoculated in Murashige and Skoog (MS medium under salinity (0.5 and 1.0% NaCl with different silicic acid concentrations (0, 0.5 and 1.0g L-1. Phytotechnical characteristics, photosynthetic pigments content, and leaf anatomy were evaluated after 30 days. Shoot length, root length, number of leaves and buds, fresh and dry weight, pigment content, stomatal density and leaf blade thickness were drastically reduced by increased salt level. The supply of silicon (1.0g L-1 has successfully mitigated the effect of salinity at 0.5% NaCl for chlorophyll, carotenoids, stomatal density and leaf blade thickness. When salt stress was about 1.0%, Si was not effective anymore. In conclusion, we affirmed that, in in vitro conditions, salt stress is harmful for cape gooseberry plants and the addition of silicon showed effective in mitigating the saline effects of some features.

Count-to-count time interval distribution analysis in a fast reactor

International Nuclear Information System (INIS)

Perez-Navarro Gomez, A.

1973-01-01

The most important kinetic parameters have been measured at the zero power fast reactor CORAL-I by means of the reactor noise analysis in the time domain, using measurements of the count-to-count time intervals. (Author) 69 refs

Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

2013-08-01

A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

Mechanical integration of the detector components for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Vasylyev, Oleg; Niebur, Wolfgang [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The Compressed Baryonic Matter experiment (CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. In order to achieve the physics performance, the detector mechanical structures should be developed taking into account the requirements of the CBM experiments: low material budget, high radiation environment, interaction rates, aperture for the silicon tracking, detector segmentation and mounting precision. A functional plan of the STS and its surrounding structural components is being worked out from which the STS system shape is derived and the power and cooling needs, the connector space requirements, life span of components and installation/repair aspects are determined. The mechanical integration is at the point of finalizing the design stage and moving towards production readiness. This contribution shows the current processing state of the following engineering tasks: construction space definition, carbon ladder shape and manufacturability, beam-pipe feedthrough structure, prototype construction, cable routing and modeling of the electronic components.

Hybrid silicon mode-locked laser with improved RF power by impedance matching

Science.gov (United States)

Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

2015-02-01

We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

Precision Luminosity for $Z^{0}$ Lineshape Measurements with a Silicon-Tungsten Calorimeter

CERN Document Server

Abbiendi, G; Alexander, Gideon; Allison, J; Anderson, K J; Anderson, S; Arcelli, S; Asai, S; Ashby, S F; Axen, D A; Azuelos, Georges; Ball, A H; Barberio, E; Barlow, R J; Batley, J Richard; Baumann, S; Bechtluft, J; Behnke, T; Bell, K W; Bella, G; Bellerive, A; Bentvelsen, Stanislaus Cornelius Maria; Bethke, Siegfried; Betts, S; Biebel, O; Biguzzi, A; Bloodworth, Ian J; Bock, P; Böhme, J; Boeriu, O; Bonacorsi, D; Boutemeur, M; Braibant, S; Bright-Thomas, P G; Brigliadori, L; Brown, R M; Burckhart, Helfried J; Capiluppi, P; Carnegie, R K; Carter, A A; Carter, J R; Chang, C Y; Charlton, D G; Chrisman, D; Ciocca, C; Clarke, P E L; Clay, E; Cohen, I; Conboy, J E; Cooke, O C; Couchman, J; Couyoumtzelis, C; Coxe, R L; Cuffiani, M; Dado, S; Dallavalle, G M; Dallison, S; Darling, C L; Davis, R; De Jong, S; de Roeck, A; Dervan, P J; Desch, Klaus; Dienes, B; Dixit, M S; Donkers, M; Dubbert, J; Duchovni, E; Duckeck, G; Duerdoth, I P; Estabrooks, P G; Etzion, E; Evans, H; Fabbri, Franco Luigi; Fanfani, A; Fanti, M; Faust, A A; Feld, L; Ferrari, P; Fiedler, F; Fierro, M; Fleck, I; Foucher, M; Frey, A; Fürtjes, A; Futyan, D I; Gagnon, P; Gary, J W; Gascon-Shotkin, S M; Gaycken, G; Geich-Gimbel, C; Giacomelli, G; Giacomelli, P; Giacomelli, R; Gibson, W R; Gingrich, D M; Glenzinski, D A; Goldberg, J; Gorn, W; Grandi, C; Graham, K; Gross, E; Grunhaus, Jacob; Gruwé, M; Hajdu, C; Hanson, G G; Hansroul, M; Hapke, M; Harder, K; Harel, A; Hargrove, C K; Harin-Dirac, M; Hart, P; Hauschild, M; Hawkes, C M; Hawkings, R; Hemingway, Richard J; Herten, G; Heuer, R D; Hildreth, M D; Hill, J C; Hillier, S J; Hobson, P R; Höcker, Andreas; Hoffman, K; Homer, R James; Honma, A K; Horváth, D; Hossain, K R; Howard, R; Hüntemeyer, P; Igo-Kemenes, P; Imrie, D C; Ishii, K; Jacob, F R; Jawahery, A; Jeremie, H; Jimack, Martin Paul; Jones, C R; Jovanovic, P; Junk, T R; Kanaya, N; Kanzaki, J I; Karlen, D A; Kartvelishvili, V G; Kawagoe, K; Kawamoto, T; Kayal, P I; Keeler, Richard K; Kellogg, R G; Kennedy, B W; Kim, D H; Kirk, J; Klier, A; Kobayashi, T; Kobel, M; Kokott, T P; Kolrep, M; Komamiya, S; Kowalewski, R V; Kress, T; Krieger, P; Von Krogh, J; Kühl, T; Kyberd, P; Lai, W P; Lafferty, G D; Lahmann, R; Landsman, Hagar Yaël; Lanske, D; Lauber, J; Lawson, I; Layter, J G; Lee, A M; Lellouch, Daniel; Letts, J; Levinson, L; Liebisch, R; Lillich, J; List, B; Littlewood, C; Lloyd, A W; Lloyd, S L; Loebinger, F K; Long, G D; Losty, Michael J; Lü, J; Ludwig, J; Liu, D; Macchiolo, A; MacPherson, A L; Mader, W F; Mannelli, M; Marcellini, S; Marchant, T E; Martin, A J; Martin, J P; Martínez, G; Mashimo, T; Mättig, P; McDonald, W J; McKenna, J A; McKigney, E A; McMahon, T J; McPherson, R A; Meijers, F; Méndez-Lorenzo, P; Menke, S; Merritt, F S; Mes, H; Meyer, I; Michelini, Aldo; Mihara, S; Mikenberg, G; Miller, D J; Mohr, W; Montanari, A; Mori, T; Müller, U; Nagai, K; Nakamura, I; Neal, H A; Nisius, R; O'Neale, S W; Oakham, F G; Odorici, F; Ögren, H O; Okpara, A N; Oreglia, M J; Orito, S; Palmonari, F; Pásztor, G; Pater, J R; Patrick, G N; Patt, J; Pérez-Ochoa, R; Petzold, S; Pfeifenschneider, P; Pilcher, J E; Pinfold, James L; Plane, D E; Poffenberger, P R; Poli, B; Polok, J; Przybycien, M B; Quadt, A; Raith, B A; Rembser, C; Rick, Hartmut; Robertson, S; Robins, S A; Rodning, N L; Roney, J M; Rosati, S; Roscoe, K; Rossi, A M; Rozen, Y; Runge, K; Runólfsson, O; Rust, D R; Sachs, K; Saeki, T; Sahr, O; Sang, W M; Sarkisyan-Grinbaum, E; Sbarra, C; Schaile, A D; Schaile, O; Scharff-Hansen, P; Schieck, J; Schmitt, B; Schmitt, S; Schöning, A; Schröder, M; Schumacher, M; Schwick, C; Scott, W G; Seuster, R; Shears, T G; Shen, B C; Shepherd-Themistocleous, C H; Sherwood, P; Siroli, G P; Skuja, A; Smith, A M; Snow, G A; Sobie, Randall J; Söldner-Rembold, S; Spagnolo, S; Springer, W; Sproston, M; Stahl, A; Stephens, K; Stoll, K; Strom, D; Ströhmer, R; Surrow, B; Talbot, S D; Taras, P; Tarem, S; Tecchio, M; Teuscher, R; Thiergen, M; Thomas, J; Thomson, M A; Torrence, E; Towers, S; Trefzger, T M; Trigger, I; Trócsányi, Z L; Tsur, E; Turner-Watson, M F; Ueda, I; Van Kooten, R; Vannerem, P; Verzocchi, M; Voss, H; Wäckerle, F; Wagner, A; Wagner, D; Waller, D; Ward, C P; Ward, D R; Watkins, P M; Watson, A T; Watson, N K; Wells, P S; Wermes, N; Wetterling, D; White, J S; Wilson, G W; Wilson, J A; Wyatt, T R; Yamashita, S; Zacek, V; Zer-Zion, D

2000-01-01

The measurement of small-angle Bhabha scattering is used to determine the luminosity at the OPAL interaction point for the LEP I data recorded between 1993 and 1995. The measurement is based on the OPAL Silicon-Tungsten Luminometer which is composed of two calorimeters encircling the LEP beam pipe, on opposite sides of the interaction point. The luminometer detects electrons from small-angle Bhabha scattering at angles between 25 and 58mrad. At LEP center-of-mass energies around the Z0, about half of all Bhabha electrons entering the detector fall within a 79nb fiducial acceptance region. The electromagnetic showers generated in the stack of 1 radiation length tungsten absorber plates are sampled by 608 silicon detectors with 38,912 radial pads of 2.5mm width.The fine segmentation of the detector, combined with the precise knowledge of its physical dimensions, allows the trajectories of incoming 45GeV electrons or photons to be determined with a total systematic error of less than 7microns. We have quantified...

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

Computer aided solution for segmenting the neuron line in hippocampal microscope images

Science.gov (United States)

Albaidhani, Tahseen; Jassim, Sabah; Al-Assam, Hisham

2017-05-01

The brain Hippocampus component is known to be responsible for memory and spatial navigation. Its functionality depends on the status of different blood vessels within the Hippocampus and is severely impaired by Alzheimer's disease as a result blockage of increasing number of blood vessels by accumulation of amyloid-beta (Aβ) protein. Accurate counting of blood vessels within the Hippocampus of mice brain, from microscopic images, is an active research area for the understanding of Alzheimer's disease. Here, we report our work on automatic detection of the Region of Interest, i.e. the region in which blood vessels are located. This area typically falls between the hippocampus edge and the line of neurons within the Hippocampus. This paper proposes a new method to detect and exclude the neuron line to improve the accuracy of blood vessel counting because some neurons on it might lead to false positive cases as they look like blood vessels. Our proposed solution is based on using trainable segmentation approach with morphological operations, taking into account variation in colour, intensity values, and image texture. Experiments on a sufficient number of microscopy images of mouse brain demonstrate the effectiveness of the developed solution in preparation for blood vessels counting.

CASTOR a VLSI CMOS mixed analog-digital circuit for low noise multichannel counting applications

International Nuclear Information System (INIS)

Comes, G.; Loddo, F.; Hu, Y.; Kaplon, J.; Ly, F.; Turchetta, R.; Bonvicini, V.; Vacchi, A.

1996-01-01

In this paper we present the design and first experimental results of a VLSI mixed analog-digital 1.2 microns CMOS circuit (CASTOR) for multichannel radiation detectors applications demanding low noise amplification and counting of radiation pulses. This circuit is meant to be connected to pixel-like detectors. Imaging can be obtained by counting the number of hits in each pixel during a user-controlled exposure time. Each channel of the circuit features an analog and a digital part. In the former one, a charge preamplifier is followed by a CR-RC shaper with an output buffer and a threshold discriminator. In the digital part, a 16-bit counter is present together with some control logic. The readout of the counters is done serially on a common tri-state output. Daisy-chaining is possible. A 4-channel prototype has been built. This prototype has been optimised for use in the digital radiography Syrmep experiment at the Elettra synchrotron machine in Trieste (Italy): its main design parameters are: shaping time of about 850 ns, gain of 190 mV/fC and ENC (e - rms)=60+17 C (pF). The counting rate per channel, limited by the analog part, can be as high as about 200 kHz. Characterisation of the circuit and first tests with silicon microstrip detectors are presented. They show the circuit works according to design specification and can be used for imaging applications. (orig.)

The Silicon Tracking System of the CBM Experiment at FAIR

Science.gov (United States)

Heuser, Johann M.

The Compressed Baryonic Matter (CBM) experiment at FAIR will conduct a systematic research program to explore the phase diagram of strongly interacting matter at highest net baryon densities and moderate temperatures. These conditions are to be created in collisions of heavy-ion beams with nuclear targets in the projectile beam energy range of 2 to 45 GeV/nucleon, initially coming from the SIS 100 synchrotron (up to 14 GeV/nucleon) and in a next step from SIS 300 enabling studies at the highest net baryon densities. Collision rates up to 107 per second are required to produce very rare probes with unprecedented statistics in this energy range. Their signatures are complex. These conditions call for detector systems designed to meet the extreme requirements in terms of rate capability, momentum and spatial resolution, and a novel data acquisition and trigger concept which is not limited by latency but by throughput. In the paper we describe the concept and development status of CBM's central detector, the Silicon Tracking System (STS). The detector realizes a large, highly granular and redundant detector system with fast read-out, and lays specific emphasis on low material budget in its physics aperture to achieve for charged particle tracks a momentum resolution of δp/p ≈ 1% at p > 1 GeV/c, at >95% track reconstruction efficiency. The detector employs 1220 highly segmented double-sided silicon micro-strip sensors of 300 µm thickness, mounted into 896 modular structures of various types that are aggregated on 106 low-mass carbon fiber ladders of different sizes that build up the tracking stations. The read-out electronics with its supply and cooling infrastructure is arranged at the periphery of the ladders, and provides a total channel count of 1.8 million. The signal transmission from the silicon sensors to the electronics is realized through ultra-thin multi-line aluminum-polyimide cables of up to half a meter length. The electronics generates a free

The silicon tracking system of the CBM experiment at FAIR

International Nuclear Information System (INIS)

Heuser, Johann M.

2015-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR will conduct a systematic research program to explore the phase diagram of strongly interacting matter at highest net baryon densities and moderate temperatures. These conditions are to be created in collisions of heavy-ion beams with nuclear targets in the projectile beam energy range of 2 to 45 GeV/nucleon, initially coming from the SIS 100 synchrotron (up to 14 GeV/nucleon) and in a next step from SIS 300 enabling studies at the highest net baryon densities. Collision rates up to 10"7 per second are required to produce very rare probes with unprecedented statistics in this energy range. Their signatures are complex. These conditions call for detector systems designed to meet the extreme requirements in terms of rate capability, momentum and spatial resolution, and a novel data acquisition and trigger concept which is not limited by latency but by throughput. In the paper we describe the concept and development status of CBM's central detector, the Silicon Tracking System (STS). The detector realizes a large, highly granular and redundant detector system with fast read-out, and lays specific emphasis on low material budget in its physics aperture to achieve for charged particle tracks a momentum resolution of δp/p≈1% at p > 1 GeV/c, at >95% track reconstruction efficiency. The detector employs 1220 highly segmented double-sided silicon micro-strip sensors of 300 μm thickness, mounted into 896 modular structures of various types that are aggregated on 106 low-mass carbon fiber ladders of different sizes that build up the tracking stations. The read-out electronics with its supply and cooling infrastructure is arranged at the periphery of the ladders, and provides a total channel count of 1.8 million. The signal transmission from the silicon sensors to the electronics is realized through ultra-thin multi-line aluminum-polyimide cables of up to half a meter length. The electronics generates a free

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Hydrophilic segmented block copolymers based on poly(ethylene oxide) and monodisperse amide segments

NARCIS (Netherlands)

Husken, D.; Feijen, Jan; Gaymans, R.J.

2007-01-01

Segmented block copolymers based on poly(ethylene oxide) (PEO) flexible segments and monodisperse crystallizable bisester tetra-amide segments were made via a polycondensation reaction. The molecular weight of the PEO segments varied from 600 to 4600 g/mol and a bisester tetra-amide segment (T6T6T)

Spinal segmental dysgenesis

Directory of Open Access Journals (Sweden)

N Mahomed

2009-06-01

Full Text Available Spinal segmental dysgenesis is a rare congenital spinal abnormality , seen in neonates and infants in which a segment of the spine and spinal cord fails to develop normally . The condition is segmental with normal vertebrae above and below the malformation. This condition is commonly associated with various abnormalities that affect the heart, genitourinary, gastrointestinal tract and skeletal system. We report two cases of spinal segmental dysgenesis and the associated abnormalities.

A top-crossover-to-bottom addressed segmented annular array using piezoelectric micromachined ultrasonic transducers

Science.gov (United States)

Jung, Joontaek; Lee, Wonjun; Kang, Woojin; Hong, Hyeryung; Yuen Song, Hi; Oh, Inn-yeal; Park, Chul Soon; Choi, Hongsoo

2015-11-01

We design and fabricate segmented annular arrays (SAAs) using piezoelectric micromachined ultrasonic transducers (pMUTs) to demonstrate the feasibility of acoustic focusing of ultrasound. The fabricated SAAs have 25 concentric top-electrode signal lines and eight bottom-electrodes for grounding to enable electronic steering of selectively grouped ultrasonic transducers from 2393 pMUT elements. Each element in the array is connected by top-crossover-to-bottom metal bridges, which reduce the parasitic capacitance. Circular-shaped pMUT elements, 120 μm in diameter, are fabricated using 1 μm-thick sol-gel lead zirconate titanate on a silicon wafer. To utilize the high-density pMUT array, a deep reactive ion etching process is used for anisotropic silicon etching to realize the transducer membranes. The resonant frequency and effective coupling coefficient of the elements, measured with an impedance analyzer, yields 1.517 MHz and 1.29%, respectively, in air. The SAAs using pMUTs are packaged on a printed circuit board and coated with parylene C for acoustic intensity measurements in water. The ultrasound generated by each segmented array is focused on a selected point in space. When a 5 Vpp, 1.5 MHz square wave is applied, the maximum spatial peak temporal average intensity ({{I}\\text{spta}} ) is found to be 79 mW cm-2 5 mm from the SAAs’ surface without beamforming. The beam widths (-3 dB) of ultrasonic radiation patterns in the elevation and azimuth directions are recorded as 3 and 3.4 mm, respectively. The results successfully show the feasibility of focusing ultrasound on a small area with SAAs using pMUTs.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

The effect of volume and quenching on estimation of counting efficiencies in liquid scintillation counting

International Nuclear Information System (INIS)

Knoche, H.W.; Parkhurst, A.M.; Tam, S.W.

1979-01-01

The effect of volume on the liquid scintillation counting performance of 14 C-samples has been investigated. A decrease in counting efficiency was observed for samples with volumes below about 6 ml and those above about 18 ml when unquenched samples were assayed. Two quench-correction methods, sample channels ratio and external standard channels ratio, and three different liquid scintillation counters, were used in an investigation to determine the magnitude of the error in predicting counting efficiencies when small volume samples (2 ml) with different levels of quenching were assayed. The 2 ml samples exhibited slightly greater standard deviations of the difference between predicted and determined counting efficiencies than did 15 ml samples. Nevertheless, the magnitude of the errors indicate that if the sample channels ratio method of quench correction is employed, 2 ml samples may be counted in conventional counting vials with little loss in counting precision. (author)

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

TasselNet: counting maize tassels in the wild via local counts regression network.

Science.gov (United States)

Lu, Hao; Cao, Zhiguo; Xiao, Yang; Zhuang, Bohan; Shen, Chunhua

2017-01-01

Accurately counting maize tassels is important for monitoring the growth status of maize plants. This tedious task, however, is still mainly done by manual efforts. In the context of modern plant phenotyping, automating this task is required to meet the need of large-scale analysis of genotype and phenotype. In recent years, computer vision technologies have experienced a significant breakthrough due to the emergence of large-scale datasets and increased computational resources. Naturally image-based approaches have also received much attention in plant-related studies. Yet a fact is that most image-based systems for plant phenotyping are deployed under controlled laboratory environment. When transferring the application scenario to unconstrained in-field conditions, intrinsic and extrinsic variations in the wild pose great challenges for accurate counting of maize tassels, which goes beyond the ability of conventional image processing techniques. This calls for further robust computer vision approaches to address in-field variations. This paper studies the in-field counting problem of maize tassels. To our knowledge, this is the first time that a plant-related counting problem is considered using computer vision technologies under unconstrained field-based environment. With 361 field images collected in four experimental fields across China between 2010 and 2015 and corresponding manually-labelled dotted annotations, a novel Maize Tassels Counting ( MTC ) dataset is created and will be released with this paper. To alleviate the in-field challenges, a deep convolutional neural network-based approach termed TasselNet is proposed. TasselNet can achieve good adaptability to in-field variations via modelling the local visual characteristics of field images and regressing the local counts of maize tassels. Extensive results on the MTC dataset demonstrate that TasselNet outperforms other state-of-the-art approaches by large margins and achieves the overall best counting

TasselNet: counting maize tassels in the wild via local counts regression network

Directory of Open Access Journals (Sweden)

Hao Lu

2017-11-01

Full Text Available Abstract Background Accurately counting maize tassels is important for monitoring the growth status of maize plants. This tedious task, however, is still mainly done by manual efforts. In the context of modern plant phenotyping, automating this task is required to meet the need of large-scale analysis of genotype and phenotype. In recent years, computer vision technologies have experienced a significant breakthrough due to the emergence of large-scale datasets and increased computational resources. Naturally image-based approaches have also received much attention in plant-related studies. Yet a fact is that most image-based systems for plant phenotyping are deployed under controlled laboratory environment. When transferring the application scenario to unconstrained in-field conditions, intrinsic and extrinsic variations in the wild pose great challenges for accurate counting of maize tassels, which goes beyond the ability of conventional image processing techniques. This calls for further robust computer vision approaches to address in-field variations. Results This paper studies the in-field counting problem of maize tassels. To our knowledge, this is the first time that a plant-related counting problem is considered using computer vision technologies under unconstrained field-based environment. With 361 field images collected in four experimental fields across China between 2010 and 2015 and corresponding manually-labelled dotted annotations, a novel Maize Tassels Counting (MTC dataset is created and will be released with this paper. To alleviate the in-field challenges, a deep convolutional neural network-based approach termed TasselNet is proposed. TasselNet can achieve good adaptability to in-field variations via modelling the local visual characteristics of field images and regressing the local counts of maize tassels. Extensive results on the MTC dataset demonstrate that TasselNet outperforms other state-of-the-art approaches by large

Patient-specific pediatric silicone heart valve models based on 3D ultrasound

Science.gov (United States)

Ilina, Anna; Lasso, Andras; Jolley, Matthew A.; Wohler, Brittany; Nguyen, Alex; Scanlan, Adam; Baum, Zachary; McGowan, Frank; Fichtinger, Gabor

2017-03-01

PURPOSE: Patient-specific heart and valve models have shown promise as training and planning tools for heart surgery, but physically realistic valve models remain elusive. Available proprietary, simulation-focused heart valve models are generic adult mitral valves and do not allow for patient-specific modeling as may be needed for rare diseases such as congenitally abnormal valves. We propose creating silicone valve models from a 3D-printed plastic mold as a solution that can be adapted to any individual patient and heart valve at a fraction of the cost of direct 3D-printing using soft materials. METHODS: Leaflets of a pediatric mitral valve, a tricuspid valve in a patient with hypoplastic left heart syndrome, and a complete atrioventricular canal valve were segmented from ultrasound images. A custom software was developed to automatically generate molds for each valve based on the segmentation. These molds were 3D-printed and used to make silicone valve models. The models were designed with cylindrical rims of different sizes surrounding the leaflets, to show the outline of the valve and add rigidity. Pediatric cardiac surgeons practiced suturing on the models and evaluated them for use as surgical planning and training tools. RESULTS: Five out of six surgeons reported that the valve models would be very useful as training tools for cardiac surgery. In this first iteration of valve models, leaflets were felt to be unrealistically thick or stiff compared to real pediatric leaflets. A thin tube rim was preferred for valve flexibility. CONCLUSION: The valve models were well received and considered to be valuable and accessible tools for heart valve surgery training. Further improvements will be made based on surgeons' feedback.

Three-dimensional segmentation and skeletonization to build an airway tree data structure for small animals

International Nuclear Information System (INIS)

Chaturvedi, Ashutosh; Lee, Zhenghong

2005-01-01

Quantitative analysis of intrathoracic airway tree geometry is important for objective evaluation of bronchial tree structure and function. Currently, there is more human data than small animal data on airway morphometry. In this study, we implemented a semi-automatic approach to quantitatively describe airway tree geometry by using high-resolution computed tomography (CT) images to build a tree data structure for small animals such as rats and mice. Silicon lung casts of the excised lungs from a canine and a mouse were used for micro-CT imaging of the airway trees. The programming language IDL was used to implement a 3D region-growing threshold algorithm for segmenting out the airway lung volume from the CT data. Subsequently, a fully-parallel 3D thinning algorithm was implemented in order to complete the skeletonization of the segmented airways. A tree data structure was then created and saved by parsing through the skeletonized volume using the Python programming language. Pertinent information such as the length of all airway segments was stored in the data structure. This approach was shown to be accurate and efficient for up to six generations for the canine lung cast and ten generations for the mouse lung cast

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Effects of Alternating Hydrogenated and Protonated Segments in polymers on their Wettability.

Science.gov (United States)

Smith, Dennis; Traiphol, Rakchart; Cheng, Gang; Perahia, Dvora

2003-03-01

Polymers consisting of alternating hydrogenated and fluorinated segments exhibit unique interfacial characteristics governed by the components that dominate the interface. Presence of fluorine reduces the interfacial energy and is expected to decrease the adhesion to the polymer surface. Thin liquid crystalline (LC) layers of 4,4?-octyl-cyanobiphenyl, cast on top of a polymeric layer consisting of alternating methylstylbine protonated segments bridged by a fluorinated group was used as a mechanistic tool to study of interfacial effects on three parameters: wetting, interfacial alignment and surface induces structures. The liquid crystal cast on a low interfacial energy fluorinated polymeric film exhibits bulk homeotropic alignment as expected. However it fully wetted the polymer surface despite the incompatibility of the protonated LC and mainly fluorinated polymer interface. Further more, it was found to stabilize the interfacial Semitic layers to a higher temperature and induce different surface ordering that was not observed at the same temperature neither in the bulk nor at the interfaces with silicon or glass surface. These results indicate that the interfacial interactions of polymers with liquid crystals are a complex function of both surface energies and the interfacial structure of the polymer.

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

A comparative study on the blood and milk cell counts of healthy, subclinical and clinical mastitis Karan Fries cows

Directory of Open Access Journals (Sweden)

Mohanned Alhussien

2015-05-01

Full Text Available Aim: The present study was aimed to study the use of cell counts as an early indicator of mammary health. Materials and Methods: Milk and blood cell counts were estimated from 8 healthy, 8 subclinical (SCM, and 8 clinically mastitis (CM groups of Karan Fries (KF cows. Results: Total leucocyte counts and neutrophil percent in blood and milk somatic cells and milk neutrophil percent of healthy cows increased significantly (p<0.05 in SCM cows and CM cows. Viability of blood and milk neutrophils was more in healthy cows, but decreased significantly (p<0.05 in SCM and CM cows. Significant (p<0.05 decrease were also observed in both the blood and milk lymphocytes and monocytes of SCM and CM cows. Phagocytic activity (PA of blood neutrophils also decreased significantly (p<0.05 in SCM cows. There was no difference between the PA of SCM and CM cows. Milk neutrophil percent was more in the SCM and clinically infected milk than in the blood of these cows. About 96-97% of the neutrophils had segmented nucleus in both healthy and subclinical milk, whereas, 2-3% were having band shaped or immature nuclei. There was a significant decrease in the segmented neutrophils, whereas, band neutrophils increase significantly to about 5% in the infected milk of mastitic cows. Viability of the milk neutrophils decreased more in case of subclinical and clinical milk as compared to that of blood. PA was found to be highest in the milk of healthy group of cows, but decreased significantly (p<0.05 in subclinically infected cows. However, there was no difference between the PA of milk neutrophils of SCM and CM cows. PA of milk was also found to be significantly lower in the milk of healthy cows when compared to that of blood neutrophils. Conclusion: This study indicated that percent neutrophils and their type in conjunction with milk somatic cell counts can be used as a more reliable indicator of mammary health in cows.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicon: electrochemistry and luminescence

NARCIS (Netherlands)

Kooij, Ernst Stefan

1997-01-01

The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Isospectral discrete and quantum graphs with the same flip counts and nodal counts

Science.gov (United States)

Juul, Jonas S.; Joyner, Christopher H.

2018-06-01

The existence of non-isomorphic graphs which share the same Laplace spectrum (to be referred to as isospectral graphs) leads naturally to the following question: what additional information is required in order to resolve isospectral graphs? It was suggested by Band, Shapira and Smilansky that this might be achieved by either counting the number of nodal domains or the number of times the eigenfunctions change sign (the so-called flip count) (Band et al 2006 J. Phys. A: Math. Gen. 39 13999–4014 Band and Smilansky 2007 Eur. Phys. J. Spec. Top. 145 171–9). Recent examples of (discrete) isospectral graphs with the same flip count and nodal count have been constructed by Ammann by utilising Godsil–McKay switching (Ammann private communication). Here, we provide a simple alternative mechanism that produces systematic examples of both discrete and quantum isospectral graphs with the same flip and nodal counts.

Automatic Melody Segmentation

NARCIS (Netherlands)

Rodríguez López, Marcelo

2016-01-01

The work presented in this dissertation investigates music segmentation. In the field of Musicology, segmentation refers to a score analysis technique, whereby notated pieces or passages of these pieces are divided into “units” referred to as sections, periods, phrases, and so on. Segmentation

Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

Energy Technology Data Exchange (ETDEWEB)

Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

2016-08-21

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Large-area hexagonal silicon detectors for the CMS High Granularity Calorimeter

Science.gov (United States)

Pree, E.

2018-02-01

During the so-called Phase-2 Upgrade, the CMS experiment at CERN will undergo significant improvements to cope with the 10-fold luminosity increase of the High Luminosity LHC (HL-LHC) era. Especially the forward calorimetry will suffer from very high radiation levels and intensified pileup in the detectors. For this reason, the CMS collaboration is designing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (CE-E) and hadronic (CE-H) compartments. The CE-E and a large fraction of CE-H will consist of a sandwich structure with silicon as active detector material. This paper presents an overview of the ongoing sensor development for the HGCAL and highlights important design features and measurement techniques. The design and layout of an 8-inch silicon sensor prototype is shown. The hexagonal sensors consist of 235 pads, each with an area of about 1 cm2. Furthermore, Synopsys TCAD simulations regarding the high voltage stability of the sensors for different geometric parameters are performed. Finally, two different IV characterisation methods are compared on the same sensor.

Counting It Twice.

Science.gov (United States)

Schattschneider, Doris

1991-01-01

Provided are examples from many domains of mathematics that illustrate the Fubini Principle in its discrete version: the value of a summation over a rectangular array is independent of the order of summation. Included are: counting using partitions as in proof by pictures, combinatorial arguments, indirect counting as in the inclusion-exclusion…

Low White Blood Cell Count

Science.gov (United States)

Symptoms Low white blood cell count By Mayo Clinic Staff A low white blood cell count (leukopenia) is a decrease ... of white blood cell (neutrophil). The definition of low white blood cell count varies from one medical ...

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

International Nuclear Information System (INIS)

Timokhov, D. F.; Timokhov, F. P.

2009-01-01

Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

A correlative approach to segmenting phases and ferrite morphologies in transformation-induced plasticity steel using electron back-scattering diffraction and energy dispersive X-ray spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Gazder, Azdiar A., E-mail: azdiar@uow.edu.au [Electron Microscopy Centre, University of Wollongong, New South Wales 2500 (Australia); Al-Harbi, Fayez; Spanke, Hendrik Th. [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, New South Wales 2522 (Australia); Mitchell, David R.G. [Electron Microscopy Centre, University of Wollongong, New South Wales 2500 (Australia); Pereloma, Elena V. [Electron Microscopy Centre, University of Wollongong, New South Wales 2500 (Australia); School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, New South Wales 2522 (Australia)

2014-12-15

Using a combination of electron back-scattering diffraction and energy dispersive X-ray spectroscopy data, a segmentation procedure was developed to comprehensively distinguish austenite, martensite, polygonal ferrite, ferrite in granular bainite and bainitic ferrite laths in a thermo-mechanically processed low-Si, high-Al transformation-induced plasticity steel. The efficacy of the ferrite morphologies segmentation procedure was verified by transmission electron microscopy. The variation in carbon content between the ferrite in granular bainite and bainitic ferrite laths was explained on the basis of carbon partitioning during their growth. - Highlights: • Multi-condition segmentation of austenite, martensite, polygonal ferrite and ferrite in bainite. • Ferrites in granular bainite and bainitic ferrite segmented by variation in relative carbon counts. • Carbon partitioning during growth explains variation in carbon content of ferrites in bainites. • Developed EBSD image processing tools can be applied to the microstructures of a variety of alloys. • EBSD-based segmentation procedure verified by correlative TEM results.

Segmented trapped vortex cavity

Science.gov (United States)

Grammel, Jr., Leonard Paul (Inventor); Pennekamp, David Lance (Inventor); Winslow, Jr., Ralph Henry (Inventor)

2010-01-01

An annular trapped vortex cavity assembly segment comprising includes a cavity forward wall, a cavity aft wall, and a cavity radially outer wall there between defining a cavity segment therein. A cavity opening extends between the forward and aft walls at a radially inner end of the assembly segment. Radially spaced apart pluralities of air injection first and second holes extend through the forward and aft walls respectively. The segment may include first and second expansion joint features at distal first and second ends respectively of the segment. The segment may include a forward subcomponent including the cavity forward wall attached to an aft subcomponent including the cavity aft wall. The forward and aft subcomponents include forward and aft portions of the cavity radially outer wall respectively. A ring of the segments may be circumferentially disposed about an axis to form an annular segmented vortex cavity assembly.

A study of reconstruction accuracy for a cardiac SPECT system with multi-segmental collimation

International Nuclear Information System (INIS)

Yu, D.C.; Chang, W.; Pan, T.S.

1996-01-01

To improve the geometric efficiency of cardiac SPECT imaging, we have previously proposed to use a ring geometry and a multi-segmental collimation. The proposed collimation consists of multiple parallel collimators with most of the segments focused on a small central region, where the patient heart should be positioned. This scheme provides an significantly increased detection efficiency for the central region, but at the expense of reduced efficiency for the surrounding background. We have used computer simulations to evaluate the implication of this scheme on the accuracy of the reconstructed cardiac images. Two imaging situations were simulated, one with the heart well placed in the center, the other with the heart shifted outward and partially outside the central region; a neighboring high uptake liver was also simulated. The images were reconstructed with ML-EM and OS-EM methods using a complete attenuation map. The results indicate the deviation caused by truncation is not significant and is not strongly dependent on the activity of the liver when the heart is well positioned within the central region. The distribution of activity in the myocardium reconstructed with ML-EM or OS-EM is not sensitive to the noisy projections sampled from the background. When the heart is positioned improperly, the image reconstructed from the hybrid emission (a combination of high-count projections through the central region and low-count background projections) can restore the activity for the myocardium with increased noise variances in the section outside the central region

Joining elements of silicon carbide

International Nuclear Information System (INIS)

Olson, B.A.

1979-01-01

A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

Performance Analysis of Segmentation of Hyperspectral Images Based on Color Image Segmentation

Directory of Open Access Journals (Sweden)

Praveen Agarwal

2017-06-01

Full Text Available Image segmentation is a fundamental approach in the field of image processing and based on user’s application .This paper propose an original and simple segmentation strategy based on the EM approach that resolves many informatics problems about hyperspectral images which are observed by airborne sensors. In a first step, to simplify the input color textured image into a color image without texture. The final segmentation is simply achieved by a spatially color segmentation using feature vector with the set of color values contained around the pixel to be classified with some mathematical equations. The spatial constraint allows taking into account the inherent spatial relationships of any image and its color. This approach provides effective PSNR for the segmented image. These results have the better performance as the segmented images are compared with Watershed & Region Growing Algorithm and provide effective segmentation for the Spectral Images & Medical Images.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Innovative thin silicon detectors for monitoring of therapeutic proton beams: preliminary beam tests

Science.gov (United States)

Vignati, A.; Monaco, V.; Attili, A.; Cartiglia, N.; Donetti, M.; Fadavi Mazinani, M.; Fausti, F.; Ferrero, M.; Giordanengo, S.; Hammad Ali, O.; Mandurrino, M.; Manganaro, L.; Mazza, G.; Sacchi, R.; Sola, V.; Staiano, A.; Cirio, R.; Boscardin, M.; Paternoster, G.; Ficorella, F.

2017-12-01

To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

Construction and beam-tests of silicon-tungsten and scintillator-SiPM modules for the CMS High Granularity Calorimeter for HL-LHC

CERN Document Server

Chang, Yung-wei

2018-01-01

A High Granularity Calorimeter (HGCAL) is being designed to replace the existing endcap calorimeters in CMS for the HL-LHC era. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (ECAL) and hadronic (HCAL) compartments, with silicon sensors being chosen for the high-pseudorapidity regions due to their radiation tolerance. The remainder of the HGCAL, in the lower radiation environment, will use plastic scintillator with on-tile SiPM readout. Prototype hexagonal silicon modules, featuring a new Skiroc2-CMS front-end chip, together with a modified version of the scintillator-SiPM CALICE AHCAL, have been built and tested in beams at CERN in 2017. In this poster, we present measurements of noise, calibration, shower shapes and performance with electrons, pions and muons.

Segmental Vitiligo.

Science.gov (United States)

van Geel, Nanja; Speeckaert, Reinhart

2017-04-01

Segmental vitiligo is characterized by its early onset, rapid stabilization, and unilateral distribution. Recent evidence suggests that segmental and nonsegmental vitiligo could represent variants of the same disease spectrum. Observational studies with respect to its distribution pattern point to a possible role of cutaneous mosaicism, whereas the original stated dermatomal distribution seems to be a misnomer. Although the exact pathogenic mechanism behind the melanocyte destruction is still unknown, increasing evidence has been published on the autoimmune/inflammatory theory of segmental vitiligo. Copyright © 2016 Elsevier Inc. All rights reserved.

Timing of silicone stent removal in patients with post-tuberculosis bronchial stenosis

Directory of Open Access Journals (Sweden)

Jung Seop Eom

2013-01-01

Full Text Available Context: In patients with post-tuberculosis bronchial stenosis (PTBS, the severity of bronchial stenosis affects the restenosis rate after the silicone stent is removed. In PTBS patients with incomplete bronchial obstruction, who had a favorable prognosis, the timing of stent removal to ensure airway patency is not clear. Aims: We evaluated the time for silicone stent removal in patients with incomplete PTBS. Settings and Design: A retrospective study examined PTBS patients who underwent stenting and removal of a silicone stent. Methods: Incomplete bronchial stenosis was defined as PTBS other than total bronchial obstruction, which had a luminal opening at the stenotic segment on bronchoscopic intervention. The duration of stenting was defined as the interval from stent insertion to removal. The study included 44 PTBS patients and the patients were grouped at intervals of 6 months according to the duration of stenting. Results: Patients stented for more than 12 months had a significantly lower restenosis rate than those stented for less than 12 months (4% vs. 35%, P = 0.009. Multiple logistic regression revealed an association between stenting for more than 12 months and a low restenosis rate (odds ratio 12.095; 95% confidence interval 1.097-133.377. Moreover, no restenosis was observed in PTBS patients when the stent was placed more than 14 months previously. Conclusions: In patients with incomplete PTBS, stent placement for longer than 12 months reduced restenosis after stent removal.

Segmental vitiligo with segmental morphea: An autoimmune link?

Directory of Open Access Journals (Sweden)

Pravesh Yadav

2014-01-01

Full Text Available An 18-year old girl with segmental vitiligo involving the left side of the trunk and left upper limb with segmental morphea involving the right side of trunk and right upper limb without any deeper involvement is illustrated. There was no history of preceding drug intake, vaccination, trauma, radiation therapy, infection, or hormonal therapy. Family history of stable vitiligo in her brother and a history of type II diabetes mellitus in the father were elicited. Screening for autoimmune diseases and antithyroid antibody was negative. An autoimmune link explaining the co-occurrence has been proposed. Cutaneous mosiacism could explain the presence of both the pathologies in a segmental distribution.

Market Segmentation in Business Technology Base: The Case of Segmentation of Sparkling

Directory of Open Access Journals (Sweden)

Valéria Riscarolli

2014-08-01

Full Text Available A common market segmentation premise for products and services rules consumer behavior as the segmentation center piece. Would this be the logic for segmentation used by small technology based companies? In this article we target at determining the principles of market segmentation used by a vitiwinery company, as research object. This company is recognized by its products excellence, either in domestic as well as in the foreign market, among 13 distinct countries. The research method used is a case study, through information from the company’s CEOs and crossed by primary information from observation and formal registries and documents of the company. In this research we look at sparkling wines market segmentation. Main results indicate that the winery studied considers only technological elements as the basis to build a market segment. One may conclude that a market segmentation for this company is based upon technological dominion of sparkling wines production, aligned with a premium-price policy. In the company, directorship believes that as sparkling wines market is still incipient in the country, sparkling wine market segments will form and consolidate after the evolution of consumers tasting preferences, depending on technologies that boost sparkling wines quality. 

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

Hanford whole body counting manual

International Nuclear Information System (INIS)

Palmer, H.E.; Brim, C.P.; Rieksts, G.A.; Rhoads, M.C.

1987-05-01

This document, a reprint of the Whole Body Counting Manual, was compiled to train personnel, document operation procedures, and outline quality assurance procedures. The current manual contains information on: the location, availability, and scope of services of Hanford's whole body counting facilities; the administrative aspect of the whole body counting operation; Hanford's whole body counting facilities; the step-by-step procedure involved in the different types of in vivo measurements; the detectors, preamplifiers and amplifiers, and spectroscopy equipment; the quality assurance aspect of equipment calibration and recordkeeping; data processing, record storage, results verification, report preparation, count summaries, and unit cost accounting; and the topics of minimum detectable amount and measurement accuracy and precision. 12 refs., 13 tabs

Characterization of silicon photomultipliers and validation of the electrical model

Science.gov (United States)

Peng, Peng; Qiang, Yi; Ross, Steve; Burr, Kent

2018-04-01

This paper introduces a systematic way to measure most features of the silicon photomultipliers (SiPM). We implement an efficient two-laser procedure to measure the recovery time. Avalanche probability was found to play an important role in explaining the right behavior of the SiPM recovery process. Also, we demonstrate how equivalent circuit parameters measured by optical tests can be used in SPICE modeling to predict details of the time constants relevant to the pulse shape. The SiPM properties measured include breakdown voltage, gain, diode capacitor, quench resistor, quench capacitor, dark count rate, photodetection efficiency, cross-talk and after-pulsing probability, and recovery time. We apply these techniques on the SiPMs from two companies: Hamamatsu and SensL.

Physico-chemical properties and solubility behaviour of multi-substituted hydroxyapatite powders containing silicon

International Nuclear Information System (INIS)

Sprio, S.; Tampieri, A.; Landi, E.; Sandri, M.; Martorana, S.; Celotti, G.; Logroscino, G.

2008-01-01

Hydroxyapatite powders characterized by ionic substitutions both in anionic and cationic sites were successfully prepared by synthesis in aqueous medium. The process parameters were set up to allow the simultaneous substitution of the foreign ions, namely carbonate, magnesium and silicon in the crystallographic site of calcium and phosphorus, keeping in count the competition which arises between atoms destined to occupy the same crystallographic site. The chemico-physical properties of the powders were investigated through several analytical techniques, i.e. X-ray diffraction, infrared spectroscopy, atomic emission spectroscopy and thermo-gravimetric analysis. The results show that the utilization of sodium hydrogen-carbonate as a reactant allows the entering of carbonate into the HA structure, mainly in phosphate position, while sodium is eliminated during the process of the powder washing. The entering of silicon in the HA structure progressively reduces its crystallinity, as also carbonate ions do. Silicate and carbonate ions can enter simultaneously into the HA structure, in biological-like amounts, although they compete for the occupation of the phosphate site; the powder crystallinity is strongly reduced as the content of the two substituting ions increases, so that a limit molar concentration exists where the apatite structure collapses and an amorphous phase forms with the simultaneous formation of crystalline calcium carbonate. Solubility tests, carried out at physiological conditions, reveal an increased calcium release in the HA powders containing silicon compared to the silicon-free HA; the solubility behaviour of the multi-substituted HA powders at physiological conditions makes these materials promising as bioactive bone scaffold, as they are able to continuously supply ions which are essential for the process of bone reconstruction

Indentation fatigue in silicon nitride, alumina and silicon carbide ...

Indian Academy of Sciences (India)

Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

International Nuclear Information System (INIS)

Hezel, R.; Streb, W.

1985-01-01

Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

Fluence map segmentation

International Nuclear Information System (INIS)

Rosenwald, J.-C.

2008-01-01

The lecture addressed the following topics: 'Interpreting' the fluence map; The sequencer; Reasons for difference between desired and actual fluence map; Principle of 'Step and Shoot' segmentation; Large number of solutions for given fluence map; Optimizing 'step and shoot' segmentation; The interdigitation constraint; Main algorithms; Conclusions on segmentation algorithms (static mode); Optimizing intensity levels and monitor units; Sliding window sequencing; Synchronization to avoid the tongue-and-groove effect; Accounting for physical characteristics of MLC; Importance of corrections for leaf transmission and offset; Accounting for MLC mechanical constraints; The 'complexity' factor; Incorporating the sequencing into optimization algorithm; Data transfer to the treatment machine; Interface between R and V and accelerator; and Conclusions on fluence map segmentation (Segmentation is part of the overall inverse planning procedure; 'Step and Shoot' and 'Dynamic' options are available for most TPS (depending on accelerator model; The segmentation phase tends to come into the optimization loop; The physical characteristics of the MLC have a large influence on final dose distribution; The IMRT plans (MU and relative dose distribution) must be carefully validated). (P.A.)

Strategic market segmentation

Directory of Open Access Journals (Sweden)

Maričić Branko R.

2015-01-01

Full Text Available Strategic planning of marketing activities is the basis of business success in modern business environment. Customers are not homogenous in their preferences and expectations. Formulating an adequate marketing strategy, focused on realization of company's strategic objectives, requires segmented approach to the market that appreciates differences in expectations and preferences of customers. One of significant activities in strategic planning of marketing activities is market segmentation. Strategic planning imposes a need to plan marketing activities according to strategically important segments on the long term basis. At the same time, there is a need to revise and adapt marketing activities on the short term basis. There are number of criteria based on which market segmentation is performed. The paper will consider effectiveness and efficiency of different market segmentation criteria based on empirical research of customer expectations and preferences. The analysis will include traditional criteria and criteria based on behavioral model. The research implications will be analyzed from the perspective of selection of the most adequate market segmentation criteria in strategic planning of marketing activities.

Why segmentation matters: Experience-driven segmentation errors impair "morpheme" learning.

Science.gov (United States)

Finn, Amy S; Hudson Kam, Carla L

2015-09-01

We ask whether an adult learner's knowledge of their native language impedes statistical learning in a new language beyond just word segmentation (as previously shown). In particular, we examine the impact of native-language word-form phonotactics on learners' ability to segment words into their component morphemes and learn phonologically triggered variation of morphemes. We find that learning is impaired when words and component morphemes are structured to conflict with a learner's native-language phonotactic system, but not when native-language phonotactics do not conflict with morpheme boundaries in the artificial language. A learner's native-language knowledge can therefore have a cascading impact affecting word segmentation and the morphological variation that relies upon proper segmentation. These results show that getting word segmentation right early in learning is deeply important for learning other aspects of language, even those (morphology) that are known to pose a great difficulty for adult language learners. (c) 2015 APA, all rights reserved).

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

Segmentation and Characterization of Chewing Bouts by Monitoring Temporalis Muscle Using Smart Glasses With Piezoelectric Sensor.

Science.gov (United States)

Farooq, Muhammad; Sazonov, Edward

2017-11-01

Several methods have been proposed for automatic and objective monitoring of food intake, but their performance suffers in the presence of speech and motion artifacts. This paper presents a novel sensor system and algorithms for detection and characterization of chewing bouts from a piezoelectric strain sensor placed on the temporalis muscle. The proposed data acquisition device was incorporated into the temple of eyeglasses. The system was tested by ten participants in two part experiments, one under controlled laboratory conditions and the other in unrestricted free-living. The proposed food intake recognition method first performed an energy-based segmentation to isolate candidate chewing segments (instead of using epochs of fixed duration commonly reported in research literature), with the subsequent classification of the segments by linear support vector machine models. On participant level (combining data from both laboratory and free-living experiments), with ten-fold leave-one-out cross-validation, chewing were recognized with average F-score of 96.28% and the resultant area under the curve was 0.97, which are higher than any of the previously reported results. A multivariate regression model was used to estimate chew counts from segments classified as chewing with an average mean absolute error of 3.83% on participant level. These results suggest that the proposed system is able to identify chewing segments in the presence of speech and motion artifacts, as well as automatically and accurately quantify chewing behavior, both under controlled laboratory conditions and unrestricted free-living.

Selective formation of porous silicon

Science.gov (United States)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

CalCOFI Egg Counts

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Fish egg counts and standardized counts for eggs captured in CalCOFI icthyoplankton nets (primarily vertical [Calvet or Pairovet], oblique [bongo or ring nets], and...

Using trainable segmentation and watershed transform for identifying unilocular and multilocular cysts from ultrasound images of ovarian tumour

Science.gov (United States)

Ibrahim, Dheyaa Ahmed; Al-Assam, Hisham; Du, Hongbo; Jassim, Sabah

2017-05-01

Ovarian masses are categorised into different types of malignant and benign. In order to optimize patient treatment, it is necessary to carry out pre-operational characterisation of the suspect ovarian mass to determine its category. Ultrasound imaging has been widely used in differentiating malignant from benign cases due to its safe and non-intrusive nature, and can be used for determining the number of cysts in the ovary. Presently, the gynaecologist is tasked with manually counting the number of cysts shown on the ultrasound image. This paper proposes, a new approach that automatically segments the ovarian masses and cysts from a static B-mode image. Initially, the method uses a trainable segmentation procedure and a trained neural network classifier to accurately identify the position of the masses and cysts. After that, the borders of the masses can be appraised using watershed transform. The effectiveness of the proposed method has been tested by comparing the number of cysts identified by the method against the manual examination by a gynaecologist. A total of 65 ultrasound images were used for the comparison, and the results showed that the proposed solution is a viable alternative to the manual counting method for accurately determining the number of cysts in a US ovarian image.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Count-doubling time safety circuit

International Nuclear Information System (INIS)

Keefe, D.J.; McDowell, W.P.; Rusch, G.K.

1981-01-01

There is provided a nuclear reactor count-factor-increase time monitoring circuit which includes a pulse-type neutron detector, and means for counting the number of detected pulses during specific time periods. Counts are compared and the comparison is utilized to develop a reactor scram signal, if necessary

Count-doubling time safety circuit

Science.gov (United States)

Rusch, Gordon K.; Keefe, Donald J.; McDowell, William P.

1981-01-01

There is provided a nuclear reactor count-factor-increase time monitoring circuit which includes a pulse-type neutron detector, and means for counting the number of detected pulses during specific time periods. Counts are compared and the comparison is utilized to develop a reactor scram signal, if necessary.

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Studies of a Next-Generation Silicon-Photomultiplier-Based Time-of-Flight PET/CT System.

Science.gov (United States)

Hsu, David F C; Ilan, Ezgi; Peterson, William T; Uribe, Jorge; Lubberink, Mark; Levin, Craig S

2017-09-01

This article presents system performance studies for the Discovery MI PET/CT system, a new time-of-flight system based on silicon photomultipliers. System performance and clinical imaging were compared between this next-generation system and other commercially available PET/CT and PET/MR systems, as well as between different reconstruction algorithms. Methods: Spatial resolution, sensitivity, noise-equivalent counting rate, scatter fraction, counting rate accuracy, and image quality were characterized with the National Electrical Manufacturers Association NU-2 2012 standards. Energy resolution and coincidence time resolution were measured. Tests were conducted independently on two Discovery MI scanners installed at Stanford University and Uppsala University, and the results were averaged. Back-to-back patient scans were also performed between the Discovery MI, Discovery 690 PET/CT, and SIGNA PET/MR systems. Clinical images were reconstructed using both ordered-subset expectation maximization and Q.Clear (block-sequential regularized expectation maximization with point-spread function modeling) and were examined qualitatively. Results: The averaged full widths at half maximum (FWHMs) of the radial/tangential/axial spatial resolution reconstructed with filtered backprojection at 1, 10, and 20 cm from the system center were, respectively, 4.10/4.19/4.48 mm, 5.47/4.49/6.01 mm, and 7.53/4.90/6.10 mm. The averaged sensitivity was 13.7 cps/kBq at the center of the field of view. The averaged peak noise-equivalent counting rate was 193.4 kcps at 21.9 kBq/mL, with a scatter fraction of 40.6%. The averaged contrast recovery coefficients for the image-quality phantom were 53.7, 64.0, 73.1, 82.7, 86.8, and 90.7 for the 10-, 13-, 17-, 22-, 28-, and 37-mm-diameter spheres, respectively. The average photopeak energy resolution was 9.40% FWHM, and the average coincidence time resolution was 375.4 ps FWHM. Clinical image comparisons between the PET/CT systems demonstrated the high

The Big Pumpkin Count.

Science.gov (United States)

Coplestone-Loomis, Lenny

1981-01-01

Pumpkin seeds are counted after students convert pumpkins to jack-o-lanterns. Among the activities involved, pupils learn to count by 10s, make estimates, and to construct a visual representation of 1,000. (MP)

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Simulation results for PLATO: a prototype hybrid X-ray photon counting detector with a low energy threshold for fusion plasma diagnostics

International Nuclear Information System (INIS)

Habib, A.; Menouni, M.; Pangaud, P.; Morel, C.; Fenzi, C.; Colledani, G.; Moureau, G.; Escarguel, A.

2017-01-01

PLATO is a prototype hybrid X-ray photon counting detector that has been designed to meet the specifications for plasma diagnostics for the WEST tokamak platform (Tungsten (W) Environment in Steady-state Tokamak) in southern France, with potential perspectives for ITER. PLATO represents a customized solution that fulfills high sensitivity, low dispersion and high photon counting rate. The PLATO prototype matrix is composed of 16 × 18 pixels with a 70 μm pixel pitch. New techniques have been used in analog sensitive blocks to minimize noise coupling through supply rails and substrate, and to suppress threshold dispersion across the matrix. The PLATO ASIC is designed in CMOS 0.13 μm technology and was submitted for a fabrication run in June 2016. The chip is designed to be bump-bonded to a silicon sensor. This paper presents pixel architecture as well as simulation results while highlighting novel solutions.

Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

Directory of Open Access Journals (Sweden)

Chin-Yi Tsai

2014-01-01

Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

International Nuclear Information System (INIS)

Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

2016-01-01

We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

High resolution micro-CT of low attenuating organic materials using large area photon-counting detector

International Nuclear Information System (INIS)

Kumpová, I.; Jandejsek, I.; Jakůbek, J.; Vopálenský, M.; Vavřík, D.; Fíla, T.; Koudelka, P.; Kytýř, D.; Zlámal, P.; Gantar, A.

2016-01-01

To overcome certain limitations of contemporary materials used for bone tissue engineering, such as inflammatory response after implantation, a whole new class of materials based on polysaccharide compounds is being developed. Here, nanoparticulate bioactive glass reinforced gelan-gum (GG-BAG) has recently been proposed for the production of bone scaffolds. This material offers promising biocompatibility properties, including bioactivity and biodegradability, with the possibility of producing scaffolds with directly controlled microgeometry. However, to utilize such a scaffold with application-optimized properties, large sets of complex numerical simulations using the real microgeometry of the material have to be carried out during the development process. Because the GG-BAG is a material with intrinsically very low attenuation to X-rays, its radiographical imaging, including tomographical scanning and reconstructions, with resolution required by numerical simulations might be a very challenging task. In this paper, we present a study on X-ray imaging of GG-BAG samples. High-resolution volumetric images of investigated specimens were generated on the basis of micro-CT measurements using a large area flat-panel detector and a large area photon-counting detector. The photon-counting detector was composed of a 010× 1 matrix of Timepix edgeless silicon pixelated detectors with tiling based on overlaying rows (i.e. assembled so that no gap is present between individual rows of detectors). We compare the results from both detectors with the scanning electron microscopy on selected slices in transversal plane. It has been shown that the photon counting detector can provide approx. 3× better resolution of the details in low-attenuating materials than the integrating flat panel detectors. We demonstrate that employment of a large area photon counting detector is a good choice for imaging of low attenuating materials with the resolution sufficient for numerical

High resolution micro-CT of low attenuating organic materials using large area photon-counting detector

Science.gov (United States)

Kumpová, I.; Vavřík, D.; Fíla, T.; Koudelka, P.; Jandejsek, I.; Jakůbek, J.; Kytýř, D.; Zlámal, P.; Vopálenský, M.; Gantar, A.

2016-02-01

To overcome certain limitations of contemporary materials used for bone tissue engineering, such as inflammatory response after implantation, a whole new class of materials based on polysaccharide compounds is being developed. Here, nanoparticulate bioactive glass reinforced gelan-gum (GG-BAG) has recently been proposed for the production of bone scaffolds. This material offers promising biocompatibility properties, including bioactivity and biodegradability, with the possibility of producing scaffolds with directly controlled microgeometry. However, to utilize such a scaffold with application-optimized properties, large sets of complex numerical simulations using the real microgeometry of the material have to be carried out during the development process. Because the GG-BAG is a material with intrinsically very low attenuation to X-rays, its radiographical imaging, including tomographical scanning and reconstructions, with resolution required by numerical simulations might be a very challenging task. In this paper, we present a study on X-ray imaging of GG-BAG samples. High-resolution volumetric images of investigated specimens were generated on the basis of micro-CT measurements using a large area flat-panel detector and a large area photon-counting detector. The photon-counting detector was composed of a 010× 1 matrix of Timepix edgeless silicon pixelated detectors with tiling based on overlaying rows (i.e. assembled so that no gap is present between individual rows of detectors). We compare the results from both detectors with the scanning electron microscopy on selected slices in transversal plane. It has been shown that the photon counting detector can provide approx. 3× better resolution of the details in low-attenuating materials than the integrating flat panel detectors. We demonstrate that employment of a large area photon counting detector is a good choice for imaging of low attenuating materials with the resolution sufficient for numerical simulations.

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Silicon microphones - a Danish perspective

DEFF Research Database (Denmark)

Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

1998-01-01

Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Galaxy number counts: Pt. 2

International Nuclear Information System (INIS)

Metcalfe, N.; Shanks, T.; Fong, R.; Jones, L.R.

1991-01-01

Using the Prime Focus CCD Camera at the Isaac Newton Telescope we have determined the form of the B and R galaxy number-magnitude count relations in 12 independent fields for 21 m ccd m and 19 m ccd m 5. The average galaxy count relations lie in the middle of the wide range previously encompassed by photographic data. The field-to-field variation of the counts is small enough to define the faint (B m 5) galaxy count to ±10 per cent and this variation is consistent with that expected from galaxy clustering considerations. Our new data confirm that the B, and also the R, galaxy counts show evidence for strong galaxy luminosity evolution, and that the majority of the evolving galaxies are of moderately blue colour. (author)

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Science.gov (United States)

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

2017-12-01

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Production of high specific activity silicon-32

International Nuclear Information System (INIS)

Phillips, D.R.; Brzezinski, M.A.

1998-01-01

This is the final report of a three-year, Laboratory Directed Research and Development Project (LDRD) at Los Alamos National Laboratory (LANL). There were two primary objectives for the work performed under this project. The first was to take advantage of capabilities and facilities at Los Alamos to produce the radionuclide 32 Si in unusually high specific activity. The second was to combine the radioanalytical expertise at Los Alamos with the expertise at the University of California to develop methods for the application of 32 Si in biological oceanographic research related to global climate modeling. The first objective was met by developing targetry for proton spallation production of 32 Si in KCl targets and chemistry for its recovery in very high specific activity. The second objective was met by developing a validated field-useable, radioanalytical technique, based upon gas-flow proportional counting, to measure the dynamics of silicon uptake by naturally occurring diatoms

Silicon drift detectors for high resolution room temperature X-ray spectroscopy

International Nuclear Information System (INIS)

Lechner, P.; Eckbauer, S.; Hauff, D.; Strueder, L.; Gatti, E.; Longoni, A.; Sampietro, M.

1996-01-01

New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface generated leakage current. The test of the 3.5 mm 2 large individual devices, which have also been grouped together to form a sensitive area up to 21 mm 2 have shown the following spectroscopic results: at room temperature (300 K) the devices have shown a full width at half maximum at the Mn Kα line of a radioactive 55 Fe source of 225 eV with shaping times of 250 to 500 ns. At -20 C the resolution improves to 152 eV at 2 μs Gaussian shaping. At temperatures below 200 K the energy resolution is below 140 eV. With the implementation of a digital filtering system the resolution approaches 130 eV. The system was operated with count rates up to 800 000 counts per second and per readout node, still conserving the spectroscopic qualities of the detector system. (orig.)

Characterization studies of Silicon Photomultipliers and crystals matrices for a novel time of flight PET detector

CERN Document Server

Auffray, Etiennette; Cortinovis, Daniele; Doroud, Katayoun; Garutti, Erika; Lecoq, Paul; Liu, Zheng; Martinez, Rosana; Paganoni, Marco; Pizzichemi, Marco; Silenzi, Alessandro; Xu, Chen; Zvolský, Milan

2015-01-01

This paper describes the characterization of crystal matrices and silicon photomultiplier arrays for a novel Positron Emission Tomography (PET) detector, namely the external plate of the EndoTOFPET-US system. The EndoTOFPET-US collaboration aims to integrate Time-Of-Flight PET with ultrasound endoscopy in a novel multimodal device, capable to support the development of new biomarkers for prostate and pancreatic tumors. The detector consists in two parts: a PET head mounted on an ultrasound probe and an external PET plate. The challenging goal of 1 mm spatial resolution for the PET image requires a detector with small crystal size, and therefore high channel density: 4096 LYSO crystals individually readout by Silicon Photomultipliers (SiPM) make up the external plate. The quality and properties of these components must be assessed before the assembly. The dark count rate, gain, breakdown voltage and correlated noise of the SiPMs are measured, while the LYSO crystals are evaluated in terms of light yield and en...

Investigation of the interface region between a porous silicon layer and a silicon substrate

International Nuclear Information System (INIS)

Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

2005-01-01

Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Science.gov (United States)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Performance evaluation of neuro-PET using silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Jung, Jiwoong; Choi, Yong, E-mail: ychoi@sogang.ac.kr; Jung, Jin Ho, E-mail: jinho1115@gmail.com; Kim, Sangsu; Im, Ki Chun

2016-05-21

Recently, we have developed the second prototype Silicon photomultiplier (SiPM) based positron emission tomography (PET) scanner for human brain imaging. The PET system was comprised of detector block which consisted of 4×4 SiPMs and 4×4 Lutetium Yttrium Orthosilicate arrays, charge signal transmission method, high density position decoder circuit and FPGA-embedded ADC boards. The purpose of this study was to evaluate the performance of the newly developed neuro-PET system. The energy resolution, timing resolution, spatial resolution, sensitivity, stability of the photo-peak position and count rate performance were measured. Tomographic image of 3D Hoffman brain phantom was also acquired to evaluate imaging capability of the neuro-PET. The average energy and timing resolutions measured for 511 keV gamma rays were 17±0.1% and 3±0.3 ns, respectively. Spatial resolution and sensitivity at the center of field of view (FOV) were 3.1 mm and 0.8%, respectively. The average scatter fraction was 0.4 with an energy window of 350–650 keV. The maximum true count rate and maximum NECR were measured as 43.3 kcps and 6.5 kcps at an activity concentration of 16.7 kBq/ml and 5.5 kBq/ml, respectively. Long-term stability results show that there was no significant change in the photo-peak position, energy resolution and count rate for 60 days. Phantom imaging studies were performed and they demonstrated the feasibility for high quality brain imaging. The performance tests and imaging results indicate that the newly developed PET is useful for brain imaging studies, if the axial FOV is extended to improve the system sensitivity.

RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

International Nuclear Information System (INIS)

Irwin, R.B.

1984-01-01

Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Counting statistics in radioactivity measurements

International Nuclear Information System (INIS)

Martin, J.

1975-01-01

The application of statistical methods to radioactivity measurement problems is analyzed in several chapters devoted successively to: the statistical nature of radioactivity counts; the application to radioactive counting of two theoretical probability distributions, Poisson's distribution law and the Laplace-Gauss law; true counting laws; corrections related to the nature of the apparatus; statistical techniques in gamma spectrometry [fr

Photon response of silicon diode neutron detectors

International Nuclear Information System (INIS)

McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

1976-07-01

The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Correlation between total lymphocyte count, hemoglobin, hematocrit and CD4 count in HIV patients in Nigeria.

Science.gov (United States)

Emuchay, Charles Iheanyichi; Okeniyi, Shemaiah Olufemi; Okeniyi, Joshua Olusegun

2014-04-01

The expensive and technology limited setting of CD4 count testing is a major setback to the initiation of HAART in a resource limited country like Nigeria. Simple and inexpensive tools such as Hemoglobin (Hb) measurement and Total Lymphocyte Count (TLC) are recommended as substitute marker. In order to assess the correlations of these parameters with CD4 count, 100 "apparently healthy" male volunteers tested HIV positive aged ≥ 20 years but ≤ 40 years were recruited and from whom Hb, Hct, TLC and CD4 count were obtained. The correlation coefficients, R, the Nash-Sutcliffe Coefficient of Efficiency (CoE) and the p-values of the ANOVA model of Hb, Hct and TLC with CD4 count were assessed. The assessments show that there is no significant relationship of any of these parameters with CD4 count and the correlation coefficients are very weak. This study shows that Hb, Hct and TLC cannot be substitute for CD4 count as this might lead to certain individuals' deprivation of required treatment.

Deformable meshes for medical image segmentation accurate automatic segmentation of anatomical structures

CERN Document Server

Kainmueller, Dagmar

2014-01-01

? Segmentation of anatomical structures in medical image data is an essential task in clinical practice. Dagmar Kainmueller introduces methods for accurate fully automatic segmentation of anatomical structures in 3D medical image data. The author's core methodological contribution is a novel deformation model that overcomes limitations of state-of-the-art Deformable Surface approaches, hence allowing for accurate segmentation of tip- and ridge-shaped features of anatomical structures. As for practical contributions, she proposes application-specific segmentation pipelines for a range of anatom

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Science.gov (United States)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

It counts who counts: an experimental evaluation of the importance of observer effects on spotlight count estimates

DEFF Research Database (Denmark)

Sunde, Peter; Jessen, Lonnie

2013-01-01

observers with respect to their ability to detect and estimate distance to realistic animal silhouettes at different distances. Detection probabilities were higher for observers experienced in spotlighting mammals than for inexperienced observers, higher for observers with a hunting background compared...... with non-hunters and decreased as function of age but were independent of sex or educational background. If observer-specific detection probabilities were applied to real counting routes, point count estimates from inexperienced observers without a hunting background would only be 43 % (95 % CI, 39...

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

You can count on the motor cortex: Finger counting habits modulate motor cortex activation evoked by numbers

Science.gov (United States)

Tschentscher, Nadja; Hauk, Olaf; Fischer, Martin H.; Pulvermüller, Friedemann

2012-01-01

The embodied cognition framework suggests that neural systems for perception and action are engaged during higher cognitive processes. In an event-related fMRI study, we tested this claim for the abstract domain of numerical symbol processing: is the human cortical motor system part of the representation of numbers, and is organization of numerical knowledge influenced by individual finger counting habits? Developmental studies suggest a link between numerals and finger counting habits due to the acquisition of numerical skills through finger counting in childhood. In the present study, digits 1 to 9 and the corresponding number words were presented visually to adults with different finger counting habits, i.e. left- and right-starters who reported that they usually start counting small numbers with their left and right hand, respectively. Despite the absence of overt hand movements, the hemisphere contralateral to the hand used for counting small numbers was activated when small numbers were presented. The correspondence between finger counting habits and hemispheric motor activation is consistent with an intrinsic functional link between finger counting and number processing. PMID:22133748

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Total lymphocyte count and subpopulation lymphocyte counts in relation to dietary intake and nutritional status of peritoneal dialysis patients.

Science.gov (United States)

Grzegorzewska, Alicja E; Leander, Magdalena

2005-01-01

Dietary deficiency causes abnormalities in circulating lymphocyte counts. For the present paper, we evaluated correlations between total and subpopulation lymphocyte counts (TLC, SLCs) and parameters of nutrition in peritoneal dialysis (PD) patients. Studies were carried out in 55 patients treated with PD for 22.2 +/- 11.4 months. Parameters of nutritional status included total body mass, lean body mass (LBM), body mass index (BMI), and laboratory indices [total protein, albumin, iron, ferritin, and total iron binding capacity (TIBC)]. The SLCs were evaluated using flow cytometry. Positive correlations were seen between TLC and dietary intake of niacin; TLC and CD8 and CD16+56 counts and energy delivered from protein; CD4 count and beta-carotene and monounsaturated fatty acids 17:1 intake; and CD19 count and potassium, copper, vitamin A, and beta-carotene intake. Anorexia negatively influenced CD19 count. Serum albumin showed correlations with CD4 and CD19 counts, and LBM with CD19 count. A higher CD19 count was connected with a higher red blood cell count, hemoglobin, and hematocrit. Correlations were observed between TIBC and TLC and CD3 and CD8 counts, and between serum Fe and TLC and CD3 and CD4 counts. Patients with a higher CD19 count showed a better clinical-laboratory score, especially less weakness. Patients with a higher CD4 count had less expressed insomnia. Quantities of ingested vitamins and minerals influence lymphocyte counts in the peripheral blood of PD patients. Evaluation of TLC and SLCs is helpful in monitoring the effectiveness of nutrition in these patients.

Silicon Photonics Cloud (SiCloud)

DEFF Research Database (Denmark)

DeVore, P. T. S.; Jiang, Y.; Lynch, M.

2015-01-01

Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

Speaker segmentation and clustering

OpenAIRE

Kotti, M; Moschou, V; Kotropoulos, C

2008-01-01

07.08.13 KB. Ok to add the accepted version to Spiral, Elsevier says ok whlile mandate not enforced. This survey focuses on two challenging speech processing topics, namely: speaker segmentation and speaker clustering. Speaker segmentation aims at finding speaker change points in an audio stream, whereas speaker clustering aims at grouping speech segments based on speaker characteristics. Model-based, metric-based, and hybrid speaker segmentation algorithms are reviewed. Concerning speaker...

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

A multi-scale tensor voting approach for small retinal vessel segmentation in high resolution fundus images.

Science.gov (United States)

Christodoulidis, Argyrios; Hurtut, Thomas; Tahar, Houssem Ben; Cheriet, Farida

2016-09-01

Segmenting the retinal vessels from fundus images is a prerequisite for many CAD systems for the automatic detection of diabetic retinopathy lesions. So far, research efforts have concentrated mainly on the accurate localization of the large to medium diameter vessels. However, failure to detect the smallest vessels at the segmentation step can lead to false positive lesion detection counts in a subsequent lesion analysis stage. In this study, a new hybrid method for the segmentation of the smallest vessels is proposed. Line detection and perceptual organization techniques are combined in a multi-scale scheme. Small vessels are reconstructed from the perceptual-based approach via tracking and pixel painting. The segmentation was validated in a high resolution fundus image database including healthy and diabetic subjects using pixel-based as well as perceptual-based measures. The proposed method achieves 85.06% sensitivity rate, while the original multi-scale line detection method achieves 81.06% sensitivity rate for the corresponding images (p<0.05). The improvement in the sensitivity rate for the database is 6.47% when only the smallest vessels are considered (p<0.05). For the perceptual-based measure, the proposed method improves the detection of the vasculature by 7.8% against the original multi-scale line detection method (p<0.05). Copyright © 2016 Elsevier Ltd. All rights reserved.

Segmentation of the Infant Food Market

OpenAIRE

Hrůzová, Daniela

2015-01-01

The theoretical part covers general market segmentation, namely the marketing importance of differences among consumers, the essence of market segmentation, its main conditions and the process of segmentation, which consists of four consecutive phases - defining the market, determining important criteria, uncovering segments and developing segment profiles. The segmentation criteria, segmentation approaches, methods and techniques for the process of market segmentation are also described in t...

Pancreas and cyst segmentation

Science.gov (United States)

Dmitriev, Konstantin; Gutenko, Ievgeniia; Nadeem, Saad; Kaufman, Arie

2016-03-01

Accurate segmentation of abdominal organs from medical images is an essential part of surgical planning and computer-aided disease diagnosis. Many existing algorithms are specialized for the segmentation of healthy organs. Cystic pancreas segmentation is especially challenging due to its low contrast boundaries, variability in shape, location and the stage of the pancreatic cancer. We present a semi-automatic segmentation algorithm for pancreata with cysts. In contrast to existing automatic segmentation approaches for healthy pancreas segmentation which are amenable to atlas/statistical shape approaches, a pancreas with cysts can have even higher variability with respect to the shape of the pancreas due to the size and shape of the cyst(s). Hence, fine results are better attained with semi-automatic steerable approaches. We use a novel combination of random walker and region growing approaches to delineate the boundaries of the pancreas and cysts with respective best Dice coefficients of 85.1% and 86.7%, and respective best volumetric overlap errors of 26.0% and 23.5%. Results show that the proposed algorithm for pancreas and pancreatic cyst segmentation is accurate and stable.

Phasing multi-segment undulators

International Nuclear Information System (INIS)

Chavanne, J.; Elleaume, P.; Vaerenbergh, P. Van

1996-01-01

An important issue in the manufacture of multi-segment undulators as a source of synchrotron radiation or as a free-electron laser (FEL) is the phasing between successive segments. The state of the art is briefly reviewed, after which a novel pure permanent magnet phasing section that is passive and does not require any current is presented. The phasing section allows the introduction of a 6 mm longitudinal gap between each segment, resulting in complete mechanical independence and reduced magnetic interaction between segments. The tolerance of the longitudinal positioning of one segment with respect to the next is found to be 2.8 times lower than that of conventional phasing. The spectrum at all gaps and useful harmonics is almost unchanged when compared with a single-segment undulator of the same total length. (au) 3 refs

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

FRAMEWORK FOR COMPARING SEGMENTATION ALGORITHMS

Directory of Open Access Journals (Sweden)

G. Sithole

2015-05-01

Full Text Available The notion of a ‘Best’ segmentation does not exist. A segmentation algorithm is chosen based on the features it yields, the properties of the segments (point sets it generates, and the complexity of its algorithm. The segmentation is then assessed based on a variety of metrics such as homogeneity, heterogeneity, fragmentation, etc. Even after an algorithm is chosen its performance is still uncertain because the landscape/scenarios represented in a point cloud have a strong influence on the eventual segmentation. Thus selecting an appropriate segmentation algorithm is a process of trial and error. Automating the selection of segmentation algorithms and their parameters first requires methods to evaluate segmentations. Three common approaches for evaluating segmentation algorithms are ‘goodness methods’, ‘discrepancy methods’ and ‘benchmarks’. Benchmarks are considered the most comprehensive method of evaluation. This paper shortcomings in current benchmark methods are identified and a framework is proposed that permits both a visual and numerical evaluation of segmentations for different algorithms, algorithm parameters and evaluation metrics. The concept of the framework is demonstrated on a real point cloud. Current results are promising and suggest that it can be used to predict the performance of segmentation algorithms.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Silicon Tracking Upgrade at CDF

International Nuclear Information System (INIS)

Kruse, M.C.

1998-04-01

The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

Why segmentation matters: experience-driven segmentation errors impair “morpheme” learning

Science.gov (United States)

Finn, Amy S.; Hudson Kam, Carla L.

2015-01-01

We ask whether an adult learner’s knowledge of their native language impedes statistical learning in a new language beyond just word segmentation (as previously shown). In particular, we examine the impact of native-language word-form phonotactics on learners’ ability to segment words into their component morphemes and learn phonologically triggered variation of morphemes. We find that learning is impaired when words and component morphemes are structured to conflict with a learner’s native-language phonotactic system, but not when native-language phonotactics do not conflict with morpheme boundaries in the artificial language. A learner’s native-language knowledge can therefore have a cascading impact affecting word segmentation and the morphological variation that relies upon proper segmentation. These results show that getting word segmentation right early in learning is deeply important for learning other aspects of language, even those (morphology) that are known to pose a great difficulty for adult language learners. PMID:25730305

Heterogeneous counting on filter support media

International Nuclear Information System (INIS)

Long, E.; Kohler, V.; Kelly, M.J.

1976-01-01

Many investigators in the biomedical research area have used filter paper as the support for radioactive samples. This means that a heterogeneous counting of sample sometimes results. The count rate of a sample on a filter will be affected by positioning, degree of dryness, sample application procedure, the type of filter, and the type of cocktail used. Positioning of the filter (up or down) in the counting vial can cause a variation of 35% or more when counting tritiated samples on filter paper. Samples of varying degrees of dryness when added to the counting cocktail can cause nonreproducible counts if handled improperly. Count rates starting at 2400 CPM initially can become 10,000 CPM in 24 hours for 3 H-DNA (deoxyribonucleic acid) samples dried on standard cellulose acetate membrane filters. Data on cellulose nitrate filters show a similar trend. Sample application procedures in which the sample is applied to the filter in a small spot or on a large amount of the surface area can cause nonreproducible or very low counting rates. A tritiated DNA sample, when applied topically, gives a count rate of 4,000 CPM. When the sample is spread over the whole filter, 13,400 CPM are obtained with a much better coefficient of variation (5% versus 20%). Adding protein carrier (bovine serum albumin-BSA) to the sample to trap more of the tritiated DNA on the filter during the filtration process causes a serious beta absorption problem. Count rates which are one-fourth the count rate applied to the filter are obtained on calibrated runs. Many of the problems encountered can be alleviated by a proper choice of filter and the use of a liquid scintillation cocktail which dissolves the filter. Filter-Solv has been used to dissolve cellulose nitrate filters and filters which are a combination of cellulose nitrate and cellulose acetate. Count rates obtained for these dissolved samples are very reproducible and highly efficient

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

A digital silicon photomultiplier with multiple time-to-digital converters

Energy Technology Data Exchange (ETDEWEB)

Garutti, Erika [University Hamburg (Germany); Silenzi, Alessandro [DESY, Hamburg (Germany); Xu, Chen [DESY, Hamburg (Germany); University Hamburg (Germany)

2013-07-01

A silicon photomultiplier (SiPM) with pixel level signal digitization and column-wise connected time-to-digital converters (TDCs) has been developed for an endoscopic Positron Emission Tomography (PET) detector. A digital SiPM has pixels consist of a single photon avalanche diode (SPAD) and circuit elements to optimize overall dark counts and temporal response. Compared with conventional analog SiPM, digital SiPM's direct signal route from SPAD to TDC improves single photon time resolution. In addition, using multiple TDCs can perform the statistical estimation of the time-of-arrival in multiple photon detection case such as readout of scintillation crystals. Characterization measurements of the prototype digital SiPM and a Monte-Carlo simulation to predict the timing performance of the PET detector are shown.

A study of pile-up in integrated time-correlated single photon counting systems.

Science.gov (United States)

Arlt, Jochen; Tyndall, David; Rae, Bruce R; Li, David D-U; Richardson, Justin A; Henderson, Robert K

2013-10-01

Recent demonstration of highly integrated, solid-state, time-correlated single photon counting (TCSPC) systems in CMOS technology is set to provide significant increases in performance over existing bulky, expensive hardware. Arrays of single photon single photon avalanche diode (SPAD) detectors, timing channels, and signal processing can be integrated on a single silicon chip with a degree of parallelism and computational speed that is unattainable by discrete photomultiplier tube and photon counting card solutions. New multi-channel, multi-detector TCSPC sensor architectures with greatly enhanced throughput due to minimal detector transit (dead) time or timing channel dead time are now feasible. In this paper, we study the potential for future integrated, solid-state TCSPC sensors to exceed the photon pile-up limit through analytic formula and simulation. The results are validated using a 10% fill factor SPAD array and an 8-channel, 52 ps resolution time-to-digital conversion architecture with embedded lifetime estimation. It is demonstrated that pile-up insensitive acquisition is attainable at greater than 10 times the pulse repetition rate providing over 60 dB of extended dynamic range to the TCSPC technique. Our results predict future CMOS TCSPC sensors capable of live-cell transient observations in confocal scanning microscopy, improved resolution of near-infrared optical tomography systems, and fluorescence lifetime activated cell sorting.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Segment-Tube: Spatio-Temporal Action Localization in Untrimmed Videos with Per-Frame Segmentation

OpenAIRE

Le Wang; Xuhuan Duan; Qilin Zhang; Zhenxing Niu; Gang Hua; Nanning Zheng

2018-01-01

Inspired by the recent spatio-temporal action localization efforts with tubelets (sequences of bounding boxes), we present a new spatio-temporal action localization detector Segment-tube, which consists of sequences of per-frame segmentation masks. The proposed Segment-tube detector can temporally pinpoint the starting/ending frame of each action category in the presence of preceding/subsequent interference actions in untrimmed videos. Simultaneously, the Segment-tube detector produces per-fr...

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Structural modification of silicon during the formation process of porous silicon

International Nuclear Information System (INIS)

Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

2005-01-01

Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The dark side of silicon energy efficient computing in the dark silicon era

CERN Document Server

Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

2017-01-01

This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Silicon-to-silicon wafer bonding using evaporated glass

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Lindahl, M.

1998-01-01

Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

Science.gov (United States)

Ødegaard, Trygve; Tafjord, Harald; Buran, Torleiv

1995-02-01

As part of the luminosity monitor, SAT, in the DELPHI [1] experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beans. The tracking detector reconstructs from the interaction point and the calorimeter measures the corresponding particles' energies. The SAT Tracker [2] consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder [3,4]. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. We describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques.

Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

International Nuclear Information System (INIS)

Oedegaard, T.; Tafjord, H.; Buran, T.

1994-12-01

As part of the luminosity monitor SAT in the DELPHI experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beams. The tracking detector reconstructs tracks from the interaction point and the calorimeter measures the corresponding particles' energies.The SAT Tracker consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. The authors describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques. 11 refs., 5 figs., 4 tabs

Elite silicon and solar power

International Nuclear Information System (INIS)

Yasamanov, N.A.

2000-01-01

The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Parola, Stéphanie [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France); Blanc-Pélissier, Danièle, E-mail: daniele.blanc@insa-lyon.fr [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France); Barbos, Corina; Le Coz, Marine [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France); Poulain, Gilles [TOTAL MS—New Energies, R& D Division, La Défense (France); Lemiti, Mustapha [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France)

2016-06-30

Highlights: • Ablation of Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/SiN{sub x} on Si substrates was performed with a nanosecond UV laser. • Ablation thresholds were found in good agreement with COMSOL simulation, around 0.85 and 0.95 J cm{sup −2} for Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/SiN{sub X}, respectively. • Laser-induced damage was evaluated at room temperature by time-resolved photoluminescence decay with a single photon counting detector. • Minority carrier lifetime in silicon as a function of the ablation fluence was derived from the photoluminescence decay and related to the thickness of the heat affected zone. • Quantitative measurements of laser-induced damage can be used to evaluate laser ablation of dielectrics in photovoltaics. - Abstract: Selective laser ablation of dielectric layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed on Al{sub 2}O{sub 3}, and bi-layers Al{sub 2}O{sub 3}/SiN{sub X}:H with a nanosecond UV laser at various energy densities ranging from 0.4 to 2 J cm{sup −2}. Ablation threshold was correlated to the simulated temperature at the interface between the dielectric coatings and the silicon substrate. Laser-induced damage to the silicon substrate was evaluated by time-resolved photoluminescence. The minority carrier lifetime deduced from time-resolved photoluminescence was related to the depth of the heat affected zone in the substrate.

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

LAWRENCE RADIATION LABORATORY COUNTING HANDBOOK

Energy Technology Data Exchange (ETDEWEB)

Group, Nuclear Instrumentation

1966-10-01

The Counting Handbook is a compilation of operational techniques and performance specifications on counting equipment in use at the Lawrence Radiation Laboratory, Berkeley. Counting notes have been written from the viewpoint of the user rather than that of the designer or maintenance man. The only maintenance instructions that have been included are those that can easily be performed by the experimenter to assure that the equipment is operating properly.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Time-optimized high-resolution readout-segmented diffusion tensor imaging.

Directory of Open Access Journals (Sweden)

Gernot Reishofer

Full Text Available Readout-segmented echo planar imaging with 2D navigator-based reacquisition is an uprising technique enabling the sampling of high-resolution diffusion images with reduced susceptibility artifacts. However, low signal from the small voxels and long scan times hamper the clinical applicability. Therefore, we introduce a regularization algorithm based on total variation that is applied directly on the entire diffusion tensor. The spatially varying regularization parameter is determined automatically dependent on spatial variations in signal-to-noise ratio thus, avoiding over- or under-regularization. Information about the noise distribution in the diffusion tensor is extracted from the diffusion weighted images by means of complex independent component analysis. Moreover, the combination of those features enables processing of the diffusion data absolutely user independent. Tractography from in vivo data and from a software phantom demonstrate the advantage of the spatially varying regularization compared to un-regularized data with respect to parameters relevant for fiber-tracking such as Mean Fiber Length, Track Count, Volume and Voxel Count. Specifically, for in vivo data findings suggest that tractography results from the regularized diffusion tensor based on one measurement (16 min generates results comparable to the un-regularized data with three averages (48 min. This significant reduction in scan time renders high resolution (1 × 1 × 2.5 mm(3 diffusion tensor imaging of the entire brain applicable in a clinical context.

Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Science.gov (United States)

Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

2017-09-01

In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

Possible application of silicon photomultiplier technology to detect the presence of spirit and intention: three proof-of-concept experiments.

Science.gov (United States)

Schwartz, Gary E

2010-01-01

Research investigating the survival of consciousness hypothesis has been hampered by the lack of an independent measure of the purported presence of spirit (POS). Although numerous anecdotes involving electronic devices (including tape recorders, answering machines, and computers) claim that POS can be detected with sensitive electromagnetic sensors, little systematic laboratory research has investigated this possibility. The purpose of this exploratory laboratory research was to test the feasibility of using a state-of-the-art silicon photomultiplier system to detect low photon levels potentially associated with POS. A PCDMini photon counting device manufactured by sensL provided a sensitive measure of sums of photons over time. Three proof-of-concept experiments were conducted. Each included multiple five-minute trials of "invited spirit" conditions as well as baseline controls. One experiment included a set of 10 noninvited control trials as well as controls for experimenter intention per se. Data were collected as part of a university laboratory devoted to researching advances in consciousness and health. The participants were purported spirits presumably motivated to participate in the research. The primary intervention was the experimenter's intention for purported spirits to enter the light-tight chamber on specified trials. In a light-tight chamber, the PCDMini device software counted and displayed individual sums of typically 13 to 25 photon detections per approximately 90-milliseconds time periods (in complete darkness, most time periods contained zero photons detected); the number of photon sums could be counted precisely in five-minute periods. The average number of photon sums was found to be significantly higher in purported POS trials compared with noninvited trials. Matched control trials as well as explicit experimenter intention trials showed no effects. Silicon photomultiplier devices may be sufficiently sensitive to investigate the POS and

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)