WorldWideScience

Sample records for cooled hemt low-noise

  1. W-band InP based HEMT MMIC low noise amplifiers

    Science.gov (United States)

    Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

    2002-01-01

    This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

  2. Compact modelling of InAlN/GaN HEMT for low noise applications

    International Nuclear Information System (INIS)

    Sakalas, P; Šimukovič, A; Matulionis, A; Piotrowicz, S; Jardel, O; Delage, S L; Mukherjee, A

    2014-01-01

    This paper presents results of high-frequency noise modelling of InAlN/GaN high electron mobility transistors (HEMTs) with different formulations of the minimum noise figure NF min . Current–voltage characteristics and s-parameters of 0.15 μm gate length and 2 × 75 μm gate width InAlN/GaN HEMTs were measured at room temperature in a wide frequency range (300 MHz to 50 GHz) and bias range (V GS from −4.8 to 1 V and V DS from 0 to 21 V). Both the EEHEMT1 and Angelov GaN compact models yielded excellent agreement for transfer and output characteristics, transconductance g m , and f T , f max. High-frequency noise parameters NF min , R n , Γ OPT of InAlN/GaN HEMT were measured in 8–50 GHz frequency band. Noise formulation within the EEHEMT1 model underestimates the measured NF min and R n . The well known three-parameter PRC noise model is in a better agreement with the measured data but neglects the shot noise resulting from the gate leakage. The inductive degenerated source matching method and EEHEMT1 were used to design a single stage LNA operated at 8 GHz frequency. A 10 dB gain with an input reflection of −12 dB with a 2.5 dB of noise factor were obtained at 8 GHz. (paper)

  3. A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT

    NARCIS (Netherlands)

    Maas, A.M.P.; Vliet, F.E. van

    2005-01-01

    A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 × 50 μm GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured by TIGER and features a gate-length of 0.15 μm, an fT of 22 GHz, a break-down voltage of 42 Volts and an Idss, close to

  4. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

    International Nuclear Information System (INIS)

    Wu Chia-Song; Chang Chien-Huang; Liu Hsing-Chung; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V ds of 2 V and a V gs of -0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications. (semiconductor integrated circuits)

  5. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K

    International Nuclear Information System (INIS)

    Gremion, E.

    2008-01-01

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/√(Hz) at 1 kHz and 0.12 nV/√(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  6. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K; Transistor balistique quantique et HEMT bas-bruit pour la cryoelectronique inferieure a 4.2 K

    Energy Technology Data Exchange (ETDEWEB)

    Gremion, E

    2008-01-15

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 {mu}W. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/{radical}(Hz) at 1 kHz and 0.12 nV/{radical}(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  7. Low-noise cooling system for PC on the base of loop heat pipes

    International Nuclear Information System (INIS)

    Pastukhov, Vladimir G.; Maydanik, Yury F.

    2007-01-01

    The problem of current importance connected with a wide use of personal computers (PC) and a rapid growth of their performance is a decrease in the noise level created at the operation of cooling system fans. One of the possible ways of solving this problem may be the creation of passive or semi-passive systems on the base of loop heat pipes (LHPs) in which the heat sink is an external radiator cooled by natural and/or forced air convection. The paper presents the results of development and tests of several variants of such systems, which are capable of sustaining an operating temperature of 72-78 deg. C on the heat source thermal interface which dissipates 100 W at an ambient temperature of 22 deg. C. It is also shown that the use of additional means of active cooling in combination with LHPs allows to increase the value of dissipated heat up to 180 W and to decrease the system thermal resistance down to 0.29 deg. C/W

  8. Low-noise wide-band amplifiers for stochastic beam cooling experiments

    International Nuclear Information System (INIS)

    Leskovar, B.; Lo, C.C.

    1982-01-01

    Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35 0 K at ambient temperature of 20 0 K. An analysis of preamplifier stability based on scattering parameters concept is included

  9. Low noise SQUIDS

    International Nuclear Information System (INIS)

    Waal, V.J. de.

    1983-01-01

    The design, fabrication and limitations of very sensitive SQUID magnetometers are described. The SQUID magnetometer is based on the Josephson effect. A very low-noise niobium SQUID is described. It is fabricated with ultra-small niobium junctions with an overlapping area smaller than 1 μm 2 . The photolithographic technique developed for its fabrication, is described. Also an integrated system with a SQUID and a first-order gradiometer on a single substrate is presented. Calculations of the resolution of a dc SQUID containing ideal Josephson junctions according to the RSJ model are presented including a parasitic capacitance. The usefulness of the fabricated SQUIDS as well as some remarks on their performance is considered. (Auth.)

  10. External Peltier Cooler For Low-Noise Amplifier

    Science.gov (United States)

    Soper, Terry A.

    1990-01-01

    Inexpensive Peltier-effect cooling module made of few commercially available parts used to reduce thermal noise in microwave amplifier. Retrofitted to almost any microwave low-noise amplifier or receiver preamplifier used in communication, telemetry, or radar. Includes copper or aluminum cold plate held tightly against unit to be cooled by strap-type worm-gear clamps.

  11. Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers

    Directory of Open Access Journals (Sweden)

    J. Dobes

    2015-09-01

    Full Text Available Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end can be strongly optimized to attain a suitable tradeoff between the noise figure and transducer power gain. Further, as all the four principal navigation systems (GPS, GLONASS, Galileo, and COMPASS work in similar frequency bands (roughly from 1.1 to 1.7 GHz, it is reasonable to create the low noise preamplifier for all of them. In the paper, a sophisticated method of the amplifier design is suggested based on multiobjective optimization. A substantial improvement of a standard optimization method is also outlined to satisfy a uniform coverage of Pareto front. Moreover, for enhancing efficiency of many times repeated solutions of large linear systems during the optimization, a new modification of the Markowitz criterion is suggested compatible with fast modes of the LU factorization. Extraordinary attention was also given to the accuracy of modeling. First, an extraction of pHEMT model parameters was performed including its noise part, and several models were compared. The extraction was carried out by an original identification procedure based on a combination of metaheuristic and direct methods. Second, the equations of the passive elements (including transmission lines and T-splitters were carefully defined using frequency dispersion of their parameters as Q, ESR, etc. Third, an optimal selection of the operating point and essential passive elements was performed using the improved optimization method. Finally, the s-parameters and noise figure of the amplifier were measured, and stability and third-order intermodulation products were also checked.

  12. A Low Noise Electronic Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Leenaerts, Dominicus M.W.; de Vreede, Petrus W.H.

    2002-01-01

    An electronic circuit, which can be used as a Low Noise Amplifier (LNA), comprises two complementary Field Effect Transistors (M1, M2; M5, M6), each having a gate, a source and a drain. The gates are connected together as a common input terminal, and the drains are connected together as a

  13. Superconducting low-noise oscillator

    International Nuclear Information System (INIS)

    Riebman, L.

    1992-01-01

    This patent describes a cryogenic oscillator having low phase noise and low noise. It comprises resonant circuit means formed of superconducting material for generating a signal at a desired frequency; linear amplifier means electrically connected to the resonant circuit means at first and second locations thereon; limiter means electrically connected to the resonant circuit means at a third location thereon; and buffer amplifier means for applying the signal generated by the resonant circuit means to a load and electrically connected to the resonant circuit means at a fourth location thereon. This patent also describes a method of minimizing phase noise and 1/f noise in an oscillator circuit of the type having a resonant circuit driving a load and at least a linear amplifier connected to the resonant circuit defining a closed loop having a loop gain greater than unity, and having a limiter for stabilizing the oscillator. It comprises connecting between the resonant circuit and the load a buffer amplifier and connecting the linear amplifier and the buffer amplifier to the resonant circuit

  14. Nonlinearly stacked low noise turbofan stator

    Science.gov (United States)

    Schuster, William B. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor)

    2009-01-01

    A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

  15. Low noise monolithic CMOS front end electronics

    International Nuclear Information System (INIS)

    Lutz, G.; Bergmann, H.; Holl, P.; Manfredi, P.F.

    1987-01-01

    Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

  16. Programmable, very low noise current source

    Science.gov (United States)

    Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.

    2014-12-01

    We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

  17. EUDP Project: Low Noise Airfoil - Final Report

    DEFF Research Database (Denmark)

    This document summarizes the scientific results achieved during the EUDP-funded project `Low-Noise Airfoil'. The goals of this project are, on one side to develop a measurement technique that permits the evaluation of trailing edge noise in a classical aerodynamic wind tunnel, and on the other side...... to develop and implement a design procedure to manufacture airfoil profiles with low noise emission. The project involved two experimental campaigns: one in the LM Wind Power wind tunnel, a classical aerodynamic wind tunnel, in Lunderskov (DK), the second one in the Virginia Tech Stability Wind Tunnel....... In particular, the so-called TNO trailing edge noise model could be significantly improved by introducing turbulence anisotropy in its formulation, as well as the influence of the boundary layer mean pressure gradient. This two characteristics are inherent to airfoil flows but were neglected in the original...

  18. Low noise electronics for experiments at LHC

    International Nuclear Information System (INIS)

    Manfredi, P.F.

    1984-01-01

    The need of reducing the collection times of solid state detectors will lead to thin layers, 150 to 200 μm thickness. Consequently, the charge made available by minimum ionizing particles will be rather small, between 1.2 x 10 4 and 1.6 x 10 4 electrons for unity muliplicity. Front-end electronics with adequately low noise must be designed to detect such small amounts of charge and the problem looks to be harder if the short times available to process the signals are accounted for. (orig.)

  19. Well coupled, low noise, dc SQUIDS

    International Nuclear Information System (INIS)

    Muhlfelder, B.; Beall, J.A.; Cromar, M.W.; Johnson, W.W.; Ono, R.H.

    1985-01-01

    The authors have designed, fabricated, and tested a Double Transformer (DT) coupled dc SQUID (Superconducting Quantum Interference Device) with low noise, an input inductance of 1μH and a smooth input-output characteristic. A transmission line model is presented to explain a resonance in the input-output characteristic of early versions of this device. Guided by the results of numerical simulations a new version of this device has been built and tested. Experimental results are presented that show that the resonance can be moved to a higher voltage by reducing the area of the SQUID loop. The voltage-external flux characteristic of some of these new devices agrees to within 10% with computer simulations. The minimum detectable energy per unit bandwidth (MDE) referred to the SQUID loop, is 10h, where h is Planck's constant. Computer simulations indicate an MDE of 6h

  20. Design of low noise imaging system

    Science.gov (United States)

    Hu, Bo; Chen, Xiaolai

    2017-10-01

    In order to meet the needs of engineering applications for low noise imaging system under the mode of global shutter, a complete imaging system is designed based on the SCMOS (Scientific CMOS) image sensor CIS2521F. The paper introduces hardware circuit and software system design. Based on the analysis of key indexes and technologies about the imaging system, the paper makes chips selection and decides SCMOS + FPGA+ DDRII+ Camera Link as processing architecture. Then it introduces the entire system workflow and power supply and distribution unit design. As for the software system, which consists of the SCMOS control module, image acquisition module, data cache control module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The imaging experimental results show that the imaging system exhibits a 2560*2160 pixel resolution, has a maximum frame frequency of 50 fps. The imaging quality of the system satisfies the requirement of the index.

  1. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

    2017-12-01

    This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

  2. Ultra Low Noise Poroelastic Road Surfaces

    Directory of Open Access Journals (Sweden)

    Jerzy A. Ejsmont

    2016-04-01

    Full Text Available Noise is one of the most important environmental problems related to road traffic. During the last decades, the noise emitted by the engines and powertrains of vehicles was greatly reduced and tires became a clearly dominant noise source. The article describes the concept of low noise poroelastic road surfaces that are composed of mineral and rubber aggregate bound by polyurethane resin. Those surfaces have a porous structure and are much more flexible than standard asphalt or cement concrete pavements due to high content of rubber aggregate and elastic binder. Measurements performed in several European countries indicate that such surfaces decrease tire/road noise between 7 dB and 12 dB with respect to reference surfaces such as dense asphalt concrete or stone matrix asphalt. Furthermore, poroelastic road surfaces ascertain the rolling resistance of car tires, which is comparable to classic pavements. One of the unforeseen properties of the poroelastic road surfaces is their ability to decrease the risks related to car fires with fuel spills. The article presents the road and laboratory results of noise, rolling resistance, and fire tests performed on a few types of poroelastic road surfaces.

  3. Low Noise Research Fan Stage Design

    Science.gov (United States)

    Hobbs, David E.; Neubert, Robert J.; Malmborg, Eric W.; Philbrick, Daniel H.; Spear, David A.

    1995-01-01

    This report describes the design of a Low Noise ADP Research Fan stage. The fan is a variable pitch design which is designed at the cruise pitch condition. Relative to the cruise setting, the blade is closed at takeoff and opened for reverse thrust operation. The fan stage is a split flow design with fan exit guide vanes and core stators. This fan stage design was combined with a nacelle and engine core duct to form a powered fan/nacelle, subscale model. This model is intended for use in aerodynamic performance, acoustic and structural testing in a wind tunnel. The model has a 22-inch outer fan diameter and a hub-to-top ratio of 0.426 which permits the use of existing NASA fan and cowl force balance designs and rig drive system. The design parameters were selected to permit valid acoustic and aerodynamic comparisons with the PW 17-inch rig previously tested under NASA contract. The fan stage design is described in detail. The results of the design axisymmetric analysis at aerodynamic design condition are included. The structural analysis of the fan rotor and attachment is described including the material selections and stress analysis. The blade and attachment are predicted to have adequate low cycle fatigue life, and an acceptable operating range without resonant stress or flutter. The stage was acoustically designed with airfoil counts in the fan exit guide vane and core stator to minimize noise. A fan-FEGV tone analysis developed separately under NASA contract was used to determine these airfoil counts. The fan stage design was matched to a nacelle design to form a fan/nacelle model for wind tunnel testing. The nacelle design was developed under a separate NASA contract. The nacelle was designed with an axisymmetric inlet, cowl and nozzle for convenience in testing and fabrication. Aerodynamic analysis of the nacelle confirmed the required performance at various aircraft operating conditions.

  4. Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation

    NARCIS (Netherlands)

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    2005-01-01

    Low Noise Amplifiers (LNAs) are commonly used to amplify signals that are too weak for direct processing for example in radio or cable receivers. Traditionally, low noise amplifiers are implemented via tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. This can render

  5. Effects of structural modification on reliability of nanoscale nitride HEMTs

    Science.gov (United States)

    Gaddipati, Vamsi Mohan

    AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

  6. Cross Linked Metal Particles for Low Noise Bolometer Materials

    Science.gov (United States)

    2016-12-12

    Our results indicate that the CLMPs can simultaneously have a high temperature coefficient of resistivity and a low noise, and therefore have a...indicate that the CLMPs can simultaneously have a high temperature co- efficient of resistivity and a low noise, and therefore have a great potential...current as a function of the inverse of applied bias for CLMP films at different temperatures. It is seen that the I-V curves are highly nonlinear as 7 0

  7. Qualitative criteria and thresholds for low noise asphalt mixture design

    Science.gov (United States)

    Vaitkus, A.; Andriejauskas, T.; Gražulytė, J.; Šernas, O.; Vorobjovas, V.; Kleizienė, R.

    2018-05-01

    Low noise asphalt pavements are cost efficient and cost effective alternative for road traffic noise mitigation comparing with noise barriers, façade insulation and other known noise mitigation measures. However, design of low noise asphalt mixtures strongly depends on climate and traffic peculiarities of different regions. Severe climate regions face problems related with short durability of low noise asphalt mixtures in terms of considerable negative impact of harsh climate conditions (frost-thaw, large temperature fluctuations, hydrological behaviour, etc.) and traffic (traffic loads, traffic volumes, studded tyres, etc.). Thus there is a need to find balance between mechanical and acoustical durability as well as to ensure adequate pavement skid resistance for road safety purposes. Paper presents analysis of the qualitative criteria and design parameters thresholds of low noise asphalt mixtures. Different asphalt mixture composition materials (grading, aggregate, binder, additives, etc.) and relevant asphalt layer properties (air void content, texture, evenness, degree of compaction, etc.) were investigated and assessed according their suitability for durable and effective low noise pavements. Paper concluded with the overview of requirements, qualitative criteria and thresholds for low noise asphalt mixture design for severe climate regions.

  8. An ultra low noise AC beam transformer for deceleration and diagnostics of low intensity beams

    CERN Document Server

    González, C

    1999-01-01

    The design of a broad band ultra-low noise ferrite loaded AC beam transformer is presented. It is designed for use in the CERN Antiproton Decelerator (AD), where beams of a few 107 charges must be decelerated from 3.5 GeV/c to 100 MeV/c. It is used in the RF beam-phase loop, and for intensity and bunch shape measurements during deceleration. When the beam is debunched for cooling on magnetic flat tops, the pick-up is used for measurements of intensity and momentum distribution by means of longitudinal Schottky scans. When used as Schottky pick-up, the signal to noise ratio should be better by about 40 dB than the existing stripline based longitudinal Schottky pick-up. The integrated design of pick-up and associated low-noise amplifier is presented. The achieved noise performance of a few from 1 to 3 MHz is obtained by attaching a low-noise, high-impedance silicon JFET (junction field effect transistor) amplifier to a high-Q resonant ferrite loaded cavity, and then eliminating the resonant response by low-nois...

  9. Quantum and Private Capacities of Low-Noise Channels

    Science.gov (United States)

    Leditzky, Felix; Leung, Debbie; Smith, Graeme

    2018-04-01

    We determine both the quantum and the private capacities of low-noise quantum channels to leading orders in the channel's distance to the perfect channel. It has been an open problem for more than 20 yr to determine the capacities of some of these low-noise channels such as the depolarizing channel. We also show that both capacities are equal to the single-letter coherent information of the channel, again to leading orders. We thus find that, in the low-noise regime, superadditivity and degenerate codes have a negligible benefit for the quantum capacity, and shielding does not improve the private capacity beyond the quantum capacity, in stark contrast to the situation when noisier channels are considered.

  10. Low noise constant current source for bias dependent noise measurements

    International Nuclear Information System (INIS)

    Talukdar, D.; Bose, Suvendu; Bardhan, K. K.; Chakraborty, R. K.

    2011-01-01

    A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 μA to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noise voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.

  11. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

    International Nuclear Information System (INIS)

    Xie Yuanbin; Quan Si; Ma Xiaohua; Zhang Jincheng; Li Qingmin; Hao Yue

    2011-01-01

    Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs. (semiconductor integrated circuits)

  12. A programmable ultra-low noise X-band exciter.

    Science.gov (United States)

    MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

    2001-07-01

    A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

  13. Transistor design considerations for low-noise preamplifiers

    International Nuclear Information System (INIS)

    Fair, R.B.

    1976-01-01

    A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ultimate limits on performance are evaluated in terms of the g/sub m//C/sub i/ ratio and the gate leakage current to minimize the noise sources. Si bipolar transistors and the future prospects of GaAs, Si and InAs MISFETs are discussed, and performance is compared to FETs currently being used in low-noise preamplifiers

  14. LNA A 1.9 GHZ low noise amplifier

    Directory of Open Access Journals (Sweden)

    Jorge Julián Moreno-Rubio

    2006-12-01

    Full Text Available This paper shows the design, the simulation, and the layout from a low noise amplifier (LNA, designed with and approximate band from 25 to 80 MHz. The design results of the matching neworks are shown, its noise figure, its available and transduced gain according to its non lineal model (TOM, the DC network, crash inductors and matching capacitors with the large impedance transmission lines.

  15. Obtaining and Estimating Low Noise Floors in Vibration Sensors

    DEFF Research Database (Denmark)

    Brincker, Rune; Larsen, Jesper Abildgaard

    2007-01-01

    For some applications like seismic applications and measuring ambient vibrations in structures, it is essential that the noise floors of the sensors and other system components are low and known to the user. Some of the most important noise sources are reviewed and it is discussed how the sensor...... can be designed in order to obtain a low noise floor. Techniques to estimate the noise floors for sensors are reviewed and are demonstrated on a commercial commonly used sensor for vibration testing. It is illustrated how the noise floor can be calculated using the coherence between simultaneous...

  16. A high rate, low noise, x-ray silicon strip detector system

    International Nuclear Information System (INIS)

    Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

    1993-11-01

    An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

  17. Low noise amplifier for ZnS(Ag) scintillation chamber

    International Nuclear Information System (INIS)

    Do Hoang Cuong

    1998-01-01

    A new pulse amplifier that can be used with standard photomultiplier tubes coupled with Zn(Ag) scintillation chamber is presented. The amplifier based on an IC operational amplifier LF 356N consists of a low-noise charge sensitive preamplifier and pulse shaping circuits for optimization of signal to noise ratio. Temperature instability is ≤ 0.05%/ o C. Dynamic range for linear output signals is equal +7 V. The presented amplifier is used in a measuring head for 0.17 L Lucas chambers developed in Department of Nuclear Instruments and Methods of the INCT in laboratory investigations aimed to develop methods and instruments for measurement of radon concentration in the air. The amplifier can also be employed for measurement of ionizing radiation by means of other scintillators coupled to PM tube. The amplifier is followed by a pulse discriminator with adjustable discrimination level. The amplifier output signal and discriminator output pulses are fed to external devices. (author)

  18. Advanced Low-Noise Research Fan Stage Design

    Science.gov (United States)

    Neubert, Robert; Bock, Larry; Malmborg, Eric; Owen-Peer, William

    1997-01-01

    This report describes the design of the Advanced Low-Noise Research Fan stage. The fan is a variable pitch design, which is designed at the cruise pitch condition. Relative to the cruise setting, the blade is closed at takeoff and opened for reverse thrust operation. The fan stage is a split flow design with fan exit guide vanes (FEGVs) and core stators. The fan stage design is combined with a nacelle and engine core duct to form a powered fan/nacelle subscale model. This model is intended for use in combined aerodynamic, acoustic, and structural testing in a wind tunnel. The fan has an outer diameter of 22 in. and a hub-to-tip of 0.426 in., which allows the use of existing NASA fan and cowl force balance and rig drive systems. The design parameters were selected to permit valid acoustic and aerodynamic comparisons with the Pratt & Whitney (P&W) 17- and 22-in. rigs previously tested under NASA contract. The fan stage design is described in detail. The results of the design axisymmetric and Navier-Stokes aerodynamic analysis are presented at the critical design conditions. The structural analysis of the fan rotor and attachment is included. The blade and attachment are predicted to have adequate low-cycle fatigue life and an acceptable operating range without resonant stress or flutter. The stage was acoustically designed with airfoil counts in the FEGV and core stator to minimize noise. A fan/FEGV tone analysis developed separately under NASA contract was used to determine the optimum airfoil counts. The fan stage was matched to the existing nacelle, designed under the previous P&W low-noise contract, to form a fan/nacelle model for wind tunnel testing. It is an axisymmetric nacelle for convenience in testing and analysis. Previous testing confirmed that the nacelle performed as required at various aircraft operating conditions.

  19. Design and Characterization of Low-noise Dewar for High-sensitivity SQUID Operation

    International Nuclear Information System (INIS)

    Yu, K. K.; Lee, Y. H.; Kim, K.; Kwon, H.; Kim, J. M.

    2010-01-01

    We have fabricated the low noise liquid helium(LHe) dewar with a different shape of thermal shield to apply the 64-channel SQUID(Superconducting Quantum Interference Device) gradiometer. The first shape of thermal shield was made of an aluminum plate with a wide width of 100 mm slit and the other shape was modified with a narrow width of 20 mm slit. The two types of dewars were estimated by comparing the thermal noise and the signal-to-noise ratio(SNR) of magnetocardiography(MCG) using the 1st order SQUID gradiometer system cooled each dewar. The white noise was different as a point of the dewar. The noise was increased as close as the edge of dewar, and also increased at the thermal shield with the more wide width slit. The white noise of the dewar with thermal shield of 100 mm slit was 6.5 fT/Hz 1/2 at the center of dewar and 25 fT/Hz 1/2 at the edge, and the white noise of the other one was 3.5 - 7 fT/Hz 1/2 . We measured the MCG using 64-channel SQUID gradiometer cooled at each LHe dewar and compared the SNR of MCG signal. The SNR was improved of 10 times at the LHe dewar with a modified thermal shield.

  20. Ultra-low noise miniaturized neural amplifier with hardware averaging.

    Science.gov (United States)

    Dweiri, Yazan M; Eggers, Thomas; McCallum, Grant; Durand, Dominique M

    2015-08-01

    Peripheral nerves carry neural signals that could be used to control hybrid bionic systems. Cuff electrodes provide a robust and stable interface but the recorded signal amplitude is small (concept of hardware averaging to nerve recordings obtained with cuff electrodes. An optimization procedure is developed to minimize noise and power simultaneously. The novel design was based on existing neural amplifiers (Intan Technologies, LLC) and is validated with signals obtained from the FINE in chronic dog experiments. We showed that hardware averaging leads to a reduction in the total recording noise by a factor of 1/√N or less depending on the source resistance. Chronic recording of physiological activity with FINE using the presented design showed significant improvement on the recorded baseline noise with at least two parallel operation transconductance amplifiers leading to a 46.1% reduction at N = 8. The functionality of these recordings was quantified by the SNR improvement and shown to be significant for N = 3 or more. The present design was shown to be capable of generating hardware averaging on noise improvement for neural recording with cuff electrodes, and can accommodate the presence of high source impedances that are associated with the miniaturized contacts and the high channel count in electrode arrays. This technique can be adopted for other applications where miniaturized and implantable multichannel acquisition systems with ultra-low noise and low power are required.

  1. A Low Noise Amplifier for Neural Spike Recording Interfaces

    Directory of Open Access Journals (Sweden)

    Jesus Ruiz-Amaya

    2015-09-01

    Full Text Available This paper presents a Low Noise Amplifier (LNA for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz–7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models.

  2. Wide Band Low Noise Love Wave Magnetic Field Sensor System.

    Science.gov (United States)

    Kittmann, Anne; Durdaut, Phillip; Zabel, Sebastian; Reermann, Jens; Schmalz, Julius; Spetzler, Benjamin; Meyners, Dirk; Sun, Nian X; McCord, Jeffrey; Gerken, Martina; Schmidt, Gerhard; Höft, Michael; Knöchel, Reinhard; Faupel, Franz; Quandt, Eckhard

    2018-01-10

    We present a comprehensive study of a magnetic sensor system that benefits from a new technique to substantially increase the magnetoelastic coupling of surface acoustic waves (SAW). The device uses shear horizontal acoustic surface waves that are guided by a fused silica layer with an amorphous magnetostrictive FeCoSiB thin film on top. The velocity of these so-called Love waves follows the magnetoelastically-induced changes of the shear modulus according to the magnetic field present. The SAW sensor is operated in a delay line configuration at approximately 150 MHz and translates the magnetic field to a time delay and a related phase shift. The fundamentals of this sensor concept are motivated by magnetic and mechanical simulations. They are experimentally verified using customized low-noise readout electronics. With an extremely low magnetic noise level of ≈100 pT/[Formula: see text], a bandwidth of 50 kHz and a dynamic range of 120 dB, this magnetic field sensor system shows outstanding characteristics. A range of additional measures to further increase the sensitivity are investigated with simulations.

  3. A compact, multichannel, and low noise arbitrary waveform generator.

    Science.gov (United States)

    Govorkov, S; Ivanov, B I; Il'ichev, E; Meyer, H-G

    2014-05-01

    A new type of high functionality, fast, compact, and easy programmable arbitrary waveform generator for low noise physical measurements is presented. The generator provides 7 fast differential waveform channels with a maximum bandwidth up to 200 MHz frequency. There are 6 fast pulse generators on the generator board with 78 ps time resolution in both duration and delay, 3 of them with amplitude control. The arbitrary waveform generator is additionally equipped with two auxiliary slow 16 bit analog-to-digital converters and four 16 bit digital-to-analog converters for low frequency applications. Electromagnetic shields are introduced to the power supply, digital, and analog compartments and with a proper filter design perform more than 110 dB digital noise isolation to the output signals. All the output channels of the board have 50 Ω SubMiniature version A termination. The generator board is suitable for use as a part of a high sensitive physical equipment, e.g., fast read out and manipulation of nuclear magnetic resonance or superconducting quantum systems and any other application, which requires electromagnetic interference free fast pulse and arbitrary waveform generation.

  4. A high and low noise model for strong motion accelerometers

    Science.gov (United States)

    Clinton, J. F.; Cauzzi, C.; Olivieri, M.

    2010-12-01

    We present reference noise models for high-quality strong motion accelerometer installations. We use continuous accelerometer data acquired by the Swiss Seismological Service (SED) since 2006 and other international high-quality accelerometer network data to derive very broadband (50Hz-100s) high and low noise models. The proposed noise models are compared to the Peterson (1993) low and high noise models designed for broadband seismometers; the datalogger self-noise; background noise levels at existing Swiss strong motion stations; and typical earthquake signals recorded in Switzerland and worldwide. The standard strong motion station operated by the SED consists of a Kinemetrics Episensor (2g clip level; flat acceleration response from 200 Hz to DC; insulated sensor / datalogger systems placed in vault quality sites. At all frequencies, there is at least one order of magnitude between the ALNM and the AHNM; at high frequencies (> 1Hz) this extends to 2 orders of magnitude. This study provides remarkable confirmation of the capability of modern strong motion accelerometers to record low-amplitude ground motions with seismic observation quality. In particular, an accelerometric station operating at the ALNM is capable of recording the full spectrum of near source earthquakes, out to 100 km, down to M2. Of particular interest for the SED, this study provides acceptable noise limits for candidate sites for the on-going Strong Motion Network modernisation.

  5. A compact, multichannel, and low noise arbitrary waveform generator

    International Nuclear Information System (INIS)

    Govorkov, S.; Ivanov, B. I.; Il'ichev, E.; Meyer, H.-G.

    2014-01-01

    A new type of high functionality, fast, compact, and easy programmable arbitrary waveform generator for low noise physical measurements is presented. The generator provides 7 fast differential waveform channels with a maximum bandwidth up to 200 MHz frequency. There are 6 fast pulse generators on the generator board with 78 ps time resolution in both duration and delay, 3 of them with amplitude control. The arbitrary waveform generator is additionally equipped with two auxiliary slow 16 bit analog-to-digital converters and four 16 bit digital-to-analog converters for low frequency applications. Electromagnetic shields are introduced to the power supply, digital, and analog compartments and with a proper filter design perform more than 110 dB digital noise isolation to the output signals. All the output channels of the board have 50 Ω SubMiniature version A termination. The generator board is suitable for use as a part of a high sensitive physical equipment, e.g., fast read out and manipulation of nuclear magnetic resonance or superconducting quantum systems and any other application, which requires electromagnetic interference free fast pulse and arbitrary waveform generation

  6. Nonlinear characterization of GaN HEMT

    International Nuclear Information System (INIS)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

    2010-01-01

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  7. Low noise InP-based MMIC receivers for W-band

    Science.gov (United States)

    Leonard, Regis F.

    1991-01-01

    A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.

  8. GaAs Wideband Low Noise Amplifier Design for Breast Cancer Detection System

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Delcourt, Sebastien

    2009-01-01

    Modern wideband systems require low-noise receivers with bandwidth approaching 10 GHz. This paper presents ultra-wideband stable low-noise amplifier MMIC with cascode and source follower buffer configuration using GaAs technology. Source degeneration, gate and shunt peaking inductors are used...

  9. Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

    International Nuclear Information System (INIS)

    Arnaboldi, Claudio; Fascilla, Andrea; Lund, M.W.; Pessina, Gianluigi

    2004-01-01

    We have selected different low noise JFET processes that have shown outstanding dynamic and noise performance at both room temperature and low temperatures. We have studied JFETs made with a process optimized for cryogenic operation, testing several devices of varying capacitance. For most of them, we have been able to detect the presence of shallow individual traps at low temperature which create low frequency (LF) Generation-Recombination (G-R) noise. For one device type no evidence of traps has been observed at the optimum temperature of operation (around 100 K). It had a very small residual LF noise. This device has been cooled down to 14 K. From below 100 K down to 14 K the noise was observed to increase due to G-R noise originating from donor atoms (dopants) inside the channel. A very simple theoretical interpretation confirms the nature of G-R noise from these very shallow trapping centers. We also studied devices from a process optimized for room temperature operation and found noise corresponding to the presence of a single deep level trap. Even for this circumstance the theory was experimentally confirmed. The measurement approach we used allowed us to achieve a very high accuracy in the modeling of the measured G-R noise. The ratio of the density of the atoms responsible for G-R noise above the doping concentration, N T /N d , has been verified with a sensitivity around 10 -7

  10. Observation of Synchrotron Radiation Using Low Noise Block (LNB) at ANKA

    CERN Document Server

    Judin, V; Hofmann, A; Huttel, E; Kehrer, B; Klein, M; Marsching, S; Muller, A-S; Smale, N; Caspers, F

    2011-01-01

    Generally Coherent Synchrotron Radiation (CSR) is emitted for wavelengths longer than or equal the bunch length, so for CSR in the THz-range short bunches are required. There are two types of detectors in this range of the spectrum: slow detectors like a golay cell or pyrometric detectors (used for e.g. imaging, spectroscopy) and fast detectors like superconducting bolometer detector systems and Schottky Barrier diodes (used for e.g. the investigation of dynamic processes in accelerator physics). The hot electron bolometer (HEB) detector system is a member of second group. It is very fast and has broad spectral characteristics, but unfortunately very expensive and have to be cooled using liquid helium. If the broad spectral response is not important, it will be suitably to use a Schottky Barrier diode instead. These detectors are massively cheaper but also slower. As an alternative to a Schottky diode a LNB (Low Noise Block) can be also used. It is usually used in standard TV-SAT-receivers. Due to mass produc...

  11. High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

    1985-01-01

    BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

  12. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

    Energy Technology Data Exchange (ETDEWEB)

    Du Rui; Dai Yang; Chen Yanling; Yang Fuhua, E-mail: ddrr@semi.ac.c [Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2009-03-15

    A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

  13. Indium antimonide based HEMT for RF applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.

    2014-01-01

    We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system. (semiconductor materials)

  14. S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

    Science.gov (United States)

    Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

    This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

  15. Evaluation of Low-Noise, Improved-Bearing-Contact Spiral Bevel Gears

    National Research Council Canada - National Science Library

    Lewicki, Davide

    2003-01-01

    .... Experimental tests were performed on the OH-58D helicopter main-rotor transmission in the NASA Glenn 500-hp Helicopter Transmission Test Stand Low-noise, improved-bearing- contact spiral-bevel gears...

  16. Low Cost/Low Noise Variable Pitch Ducted Fan, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — ACI proposes a design for a Propulsor (Low Cost/Low Noise Variable Pitch Ducted Fan) that has wide application in all sectors of Aviation. Propulsor hardware of this...

  17. Low-noise Collision Operators for Particle-in-cell Simulations

    International Nuclear Information System (INIS)

    Lewandowski, J.L.V.

    2005-01-01

    A new method to implement low-noise collision operators in particle-in-cell simulations is presented. The method is based on the fact that relevant collision operators can be included naturally in the Lagrangian formulation that exemplifies the particle-in-cell simulation method. Numerical simulations show that the momentum and energy conservation properties of the simulated plasma associated with the low-noise collision operator are improved as compared with standard collision algorithms based on random numbers

  18. Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

  19. Ultra-low-noise transition edge sensors for the SAFARI L-band on SPICA

    Science.gov (United States)

    Goldie, D. J.; Gao, J. R.; Glowacka, D. M.; Griffin, D. K.; Hijmering, R.; Khosropanah, P.; Jackson, B. D.; Mauskopf, P. D.; Morozov, D.; Murphy, J. A.; Ridder, M.; Trappe, N.; O'Sullivan, C.; Withington, S.

    2012-09-01

    The Far-Infrared Fourier transform spectrometer instrument SAFARI-SPICA which will operate with cooled optics in a low-background space environment requires ultra-sensitive detector arrays with high optical coupling efficiencies over extremely wide bandwidths. In earlier papers we described the design, fabrication and performance of ultra-low-noise Transition Edge Sensors (TESs) operated close to 100mk having dark Noise Equivalent Powers (NEPs) of order 4 × 10-19W/√Hz close to the phonon noise limit and an improvement of two orders of magnitude over TESs for ground-based applications. Here we describe the design, fabrication and testing of 388-element arrays of MoAu TESs integrated with far-infrared absorbers and optical coupling structures in a geometry appropriate for the SAFARI L-band (110 - 210 μm). The measured performance shows intrinsic response time τ ~ 11ms and saturation powers of order 10 fW, and a dark noise equivalent powers of order 7 × 10-19W/√Hz. The 100 × 100μm2 MoAu TESs have transition temperatures of order 110mK and are coupled to 320×320μm2 thin-film β-phase Ta absorbers to provide impedance matching to the incoming fields. We describe results of dark tests (i.e without optical power) to determine intrinsic pixel characteristics and their uniformity, and measurements of the optical performance of representative pixels operated with flat back-shorts coupled to pyramidal horn arrays. The measured and modeled optical efficiency is dominated by the 95Ω sheet resistance of the Ta absorbers, indicating a clear route to achieve the required performance in these ultra-sensitive detectors.

  20. An improved large signal model of InP HEMTs

    Science.gov (United States)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  1. AlGaN/GaN double-channel HEMT

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

    2010-01-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

  2. Design and validation of the high performance and low noise CQU-DTU-LN1 airfoils

    DEFF Research Database (Denmark)

    Cheng, Jiangtao; Zhu, Wei Jun; Fischer, Andreas

    2014-01-01

    with the blade element momentum theory, the viscous-inviscid XFOIL code and an airfoil self-noise prediction model, an optimization algorithm has been developed for designing the high performance and low noise CQU-DTU-LN1 series of airfoils with targets of maximum power coefficient and low noise emission...... emission between the CQU-DTU-LN118 airfoil and the National Advisory Committee for Aeronautics (NACA) 64618 airfoil, which is used in modern wind turbine blades, are carried out. Copyright © 2013 John Wiley & Sons, Ltd....

  3. Performance of a fast low noise front-end preamplifier for the MAGIC imaging Cherenkov telescope

    International Nuclear Information System (INIS)

    Blanch, O.; Blanchot, G.; Bosman, M.

    1999-01-01

    The observation of high energy cosmic gamma rays with an energy threshold of 15 GeV using the proposed MAGIC ground based air imaging Cherenkov telescope requires the development of new low noise fast preamplifiers for the camera photosensors. The speed and noise performance of a transimpedance preamplifier that resolves the multi photoelectron peaks from a hybrid photomultiplier with a peaking time below 7 ns is presented. The new front-end circuit is designed with RF low noise bipolar transistors and provides fast output pulses that allow for fast trigger settings

  4. Designing charge-sensitive preamplifiers based on low-noise analog integrated circuits

    International Nuclear Information System (INIS)

    Agakhanyan, T.M.

    1998-01-01

    The methodology for designing charge-sensitive preamplifiers on the low-noise analog integral circuits, including all the stages: the mathematical synthesis with optimization of the intermediate function; the scheme-technical synthesis with parametric optimization of the scheme and analysis of draft projects with the parameter verification is presented. The designing is conducted on the basis of requirements for signal parameters and noise indices of the preamplifier. The system of automated designing of the charge-sensitive preamplifiers on the low-noise analog integral circuits is developed [ru

  5. Toward sub-Kelvin resistive cooling and non destructive detection of trapped non-neutral electron plasma

    Science.gov (United States)

    Di Domizio, S.; Krasnický, D.; Lagomarsino, V.; Testera, G.; Vaccarone, R.; Zavatarelli, S.

    2015-01-01

    A resonant circuit tuned to a particular frequency of the motion of charged particles stored in a Penning trap and connected to a low noise amplifier allows, at the same time, cooling and non destructive detection of the particles. Its use is widely diffused when single or few particles are stored near the centre of a hyperbolic Penning trap. We present a consistent model that predicts the shape of the induced signal when the tuned circuit is used to detect and cool the axial motion of a cold non neutral plasma stored in an open-ended cylindrical Penning trap. The model correctly accounts for the not negligible axial plasma size. We show that the power spectrum of the signal measured across the tuned circuit provides information about the particle number and insights about the plasma temperature. We report on the design of a HEMT-based cryogenic amplifier working at 14.4 MHz and 4.2 K and the results of the noise measurements. We have measured a drain current noise in the range from 6 to 17 pA/√Hz, which corresponds to an increase of the tuned circuit equivalent temperature of at maximum 0.35 K. The cryogenic amplifier has a very low power consumption from few tens to few hundreds of μW corresponding to a drain current in the range 100-800 μ A. An additional contribution due to the gate noise has been identified when the drain current is below 300 μA above that value an upper limit of the increase of the equivalent tuned circuit temperature due to this contribution of 0.02 K has been obtained. These features make the tuned circuit connected to this amplifier a promising device for detecting and cooling the axial motion of an electron plasma when the Penning trap is mounted inside a dilution refrigerator.

  6. An accurate and simple large signal model of HEMT

    DEFF Research Database (Denmark)

    Liu, Qing

    1989-01-01

    A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid...

  7. A capacitor cross-coupled common-gate low-noise amplifier

    NARCIS (Netherlands)

    Zhuo, W.; Li, X.; Shekhar, S.; Embabi, S.H.K.; Pineda de Gyvez, J.; Allstot, D.J.; Sanchez-Sinencio, E.

    2005-01-01

    The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET fT, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated

  8. Design of low noise wind turbine blades using Betz and Joukowski concepts

    DEFF Research Database (Denmark)

    Shen, Wen Zhong; Hrgovan, Iva; Okulov, Valery

    2014-01-01

    This paper presents the aerodynamic design of low noise wind turbine blades using Betz and Joukowski concepts. The aerodynamic model is based on Blade Element Momentum theory whereas the aeroacoustic prediction model is based on the BPM model. The investigation is started with a 3MW baseline...

  9. Low noise Nb-SIS mixers at far above the gap frequency

    NARCIS (Netherlands)

    Gao, [No Value; vandeStadt, H; Jegers, JBM; Kovtonyuk, S; Hulshoff, W; Whyborn, ND; Klapwijk, TM; deGraauw, T; Liao, FJ; Liu, JY

    1996-01-01

    There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise

  10. A 7-13 GHz low-noise tuned optical front-end amplifier for heterodyne transmission system application

    DEFF Research Database (Denmark)

    Ebskamp, Frank; Schiellerup, Gert; Høgdal, Morten

    1991-01-01

    The authors present a 7-13 GHz low-noise bandpass tuned optical front-end amplifier, showing 46±1 dBΩ transimpedance, and a noise spectral density of about 12 pA/√Hz. This is the first time such a flat response and such low noise were obtained simultaneously at these frequencies, without any...

  11. Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

    Science.gov (United States)

    Suganthi, K.; Malarvizhi, S.

    2018-03-01

    A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

  12. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  13. Low-noise audio amplifiers and preamplifier for use with intrinsic thermocouples

    International Nuclear Information System (INIS)

    Langner, G.C.; Sachs, R.D.; Stewart, F.L.

    1979-03-01

    Two simple, low-noise audio amplifiers and one low-noise preamplifier for use with intrinsic thermocouples were designed, built, and tested. The amplifiers and the preamplifier have different front end designs. One amplifier uses ultralow-noise operational amplifiers; the other amplifier uses a hybrid component. The preamplifier uses ultralow-noise discrete components. The amplifiers' equivalent noise inputs, at maximum gain, are 4.09 nV and 50 nV; the preamplifier's input is 4.05 μV. Their bandwidths are 15 600 Hz, 550 Hz, and 174 kHz, respectively. the amplifiers' equivalent noise inputs were measured from approx. 0 to 100 Hz, whereas the preamplifier's equivalent noise input was measured from approx. 0 to 174 kHz

  14. Magnonic Crystal as a Delay Line for Low-Noise Auto-Oscillator

    Science.gov (United States)

    2015-05-12

    Magnonic crystal as a delay line for low-noise auto-oscillator Elena Bankowski and Thomas Meitzler U.S. Army TARDEC, Warren, Michigan 48397, USA...authors propose to use the magnonic crystal patterned on the YIG magnetic film as an efficient delay line in the feedback loop of tunable auto-oscillator...increasing the thickness of such delay line as compare to the YIG film with no pattern. In turn, use of this magnonic crystal opens a way to improve

  15. A low noise charge sensitive amplifier for use in vacuum photo diode readout

    International Nuclear Information System (INIS)

    Stephenson, R.

    1982-08-01

    The amplifier described consists of a charge sensitive pre-amplifier optimised for low noise with low values of input shunt capacitance, and a shaping amplifier providing both differentiation and integration. Amplifier gain is adjustable up to a maximum of approximately 100 μV/electron with a rise time of 2 μS to the peak of the output voltage, and with an open circuit input noise level of 150 electrons RMS. (author)

  16. Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

    Science.gov (United States)

    Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

    2017-02-01

    Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

  17. Unstable behaviour of normally-off GaN E-HEMT under short-circuit

    Science.gov (United States)

    Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

    2018-04-01

    The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

  18. Low noise wing slat system with rigid cove-filled slat

    Science.gov (United States)

    Shmilovich, Arvin (Inventor); Yadlin, Yoram (Inventor)

    2013-01-01

    Concepts and technologies described herein provide for a low noise aircraft wing slat system. According to one aspect of the disclosure provided herein, a cove-filled wing slat is used in conjunction with a moveable panel rotatably attached to the wing slat to provide a high lift system. The moveable panel rotates upward against the rear surface of the slat during deployment of the slat, and rotates downward to bridge a gap width between the stowed slat and the lower wing surface, completing the continuous outer mold line shape of the wing, when the cove-filled slat is retracted to the stowed position.

  19. LOW-NOISE PAVEMENT AS A WAY OF LIMITATION OF TRAFFIC NOISE LEVEL

    Directory of Open Access Journals (Sweden)

    Władysław Gardziejczyk

    2014-11-01

    Full Text Available Road surface can significantlyreduce the trafficnoise level. Depending on the characteristic of the upper surface layers the differences between the maximum rolling noise levels from passing vehicles to reach values about 10 dB (A. A special group is low-noise pavements characterized by the presence of voids above 15%. Application the porous asphalt layers or asphalt mixture type BBTM affects a significantreduction the width of land surrounded the roads where permissible equivalent sound level is exceeded. Such solutions in some cases can replace acoustic barriers. Road pavements with a higher content of voids require proper maintenance because their acoustic performances are reduced during operation.

  20. A Tunable Low Noise Active Bandpass Filter Using a Noise Canceling Technique

    OpenAIRE

    Soltani, N.

    2016-01-01

    A monolithic tunable low noise active bandpass filter is presented in this study. Biasing voltages can control the center frequency and quality factor. By keeping the gain constant, the center frequency shift is 300 MHz. The quality factor can range from 90 to 290 at the center frequency. By using a noise cancelling circuit, noise is kept lower than 2.8 dB. The proposed filter is designed using MMIC technology with a center frequency of 2.4 GHz and a power consumption of 180 mW. ED02AH techno...

  1. A Tunable Low Noise Active Bandpass Filter Using a Noise Canceling Technique

    Directory of Open Access Journals (Sweden)

    N. Soltani

    2016-12-01

    Full Text Available A monolithic tunable low noise active bandpass filter is presented in this study. Biasing voltages can control the center frequency and quality factor. By keeping the gain constant, the center frequency shift is 300 MHz. The quality factor can range from 90 to 290 at the center frequency. By using a noise cancelling circuit, noise is kept lower than 2.8 dB. The proposed filter is designed using MMIC technology with a center frequency of 2.4 GHz and a power consumption of 180 mW. ED02AH technology is used to simulate the circuit elements.

  2. Low noise buffer amplifiers and buffered phase comparators for precise time and frequency measurement and distribution

    Science.gov (United States)

    Eichinger, R. A.; Dachel, P.; Miller, W. H.; Ingold, J. S.

    1982-01-01

    Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.

  3. Development of a low-noise, two-dimensional amplifier array

    International Nuclear Information System (INIS)

    Kishishita, Tetsuichi; Ikeda, Hirokazu; Sakumura, Takuto; Tamura, Ken-ichi; Takahashi, Tadayuki

    2009-01-01

    This paper describes the recent development of a low-noise, two-dimensional analog front-end ASIC for hybrid pixel imaging detectors. Based on the Open-IP LSI project, the ASIC is designed to meet a low-noise requirement of better than 100e - (rms) with self-triggering capability. The ASIC is intended for the readout of pixel sensors utilizing silicon (Si) and cadmium telluride (CdTe) as detector materials for spectroscopic imaging observations in the X-ray and gamma-ray regions. The readout chip consists of a 4x4 matrix of identical 270μmx270μm pixel cells and was implemented with TSMC 0.35-μm CMOS technology. Each pixel cell contains a charge-sensitive amplifier, pole-zero cancellation circuit, shaper, comparator, and peak hold circuit. Preliminary testing of the ASIC achieved an 88e - (rms) equivalent noise charge and a 25e - /pF noise slope with power consumption of 150μW per pixel.

  4. A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording

    Directory of Open Access Journals (Sweden)

    Marco Crescentini

    2016-05-01

    Full Text Available High-throughput screening (HTS using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i design of scalable microfluidic devices; (ii design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter.

  5. A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording.

    Science.gov (United States)

    Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

    2016-05-19

    High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter.

  6. Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

    Directory of Open Access Journals (Sweden)

    Ler Chun Lee

    2008-01-01

    Full Text Available A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA. A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

  7. Ultra-Low-Noise Sub-mm/Far-IR Detectors for Space-Based Telescopes

    Science.gov (United States)

    Rostem, Karwan

    The sub-mm and Far-IR spectrum is rich with information from a wide range of astrophysical sources, including exoplanet atmospheres and galaxies at the peak star formation. In the 10-400 μm range, the spectral lines of important chemical species such H2O, HD, and [OI] can be used to map the formation and evolution of planetary systems. Dust emission in this spectral range is also an important tool for characterizing the morphology of debris disks and interstellar magnetic fields. At larger scales, accessing the formation and distribution of luminous Far-IR and sub-mm galaxies is essential to understanding star formation triggers, as well as the last stages of reionization at z 6. Detector technology is essential to realizing the full science potential of a next-generation Far-IR space telescope (Far-IR Surveyor). The technology gap in large-format, low-noise and ultra-low-noise Far-IR direct detectors is specifically highlighted by NASA's Cosmic Origins Program, and prioritized for development now to enable a flagship mission such as the Far-IR Surveyor that will address the key Cosmic Origins science questions of the next two decades. The detector requirements for a mid-resolution spectrometer are as follows: (1) Highly sensitive detectors with performance approaching 10^-19 - 10^-20 WHz 1/2 for background- limited operation in telescopes with cold optics. (2) Detector time constant in the sub- millisecond range. (3) Scalable architecture to a kilo pixel array with uniform detector characteristics. (4) Compatibility with space operation in the presence of particle radiation. We propose phononic crystals to meet the requirements of ultra-low-noise thermal detectors. By design, a phononic crystal exhibits phonon bandgaps where heat transport is forbidden. The size and location of the bandgaps depend on the elastic properties of the dielectric and the geometry of the phononic unit cell. A wide-bandwidth low-pass thermal filter with a cut-off frequency of 1.5 GHz and

  8. ECV profiling of GaAs and GaN HEMT heterostructures

    Science.gov (United States)

    Yakovlev, G.; Zubkov, V.

    2018-03-01

    AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

  9. Design of low noise class D amplifiers using an integrated filter

    International Nuclear Information System (INIS)

    Wang Haishi; Zhang Bo

    2012-01-01

    This paper investigates the noise sources in a single-ended class D amplifier (SECDA) and suggests corresponding ways to lower the noise. The total output noise could be expressed as a function of the gain and noises from different sources. According to the function, the bias voltage (V B ) is a primary noise source, especially for a SECDA with a large gain. A low noise SECDA is obtained by integrating a filter into the SECDA to lower the noise of the V B . The filter utilizes an active resister and an 80 pF capacitance to get a 3 Hz pole. A noise test and fast Fourier transform analysis show that the noise performance of this SECDA is the same as that of a SECDA with an external filter. (semiconductor integrated circuits)

  10. Ultra low-noise differential ac-coupled photodetector for sensitive pulse detection applications

    International Nuclear Information System (INIS)

    Windpassinger, Patrick J; Boisen, Axel; Kjærgaard, Niels; Polzik, Eugene S; Müller, Jörg Helge; Kubasik, Marcin; Koschorreck, Marco

    2009-01-01

    We report on the performance of ultra low-noise differential photodetectors especially designed for probing of atomic ensembles with weak light pulses. The working principle of the detectors is described together with the analysis procedures employed to extract the photon shot noise of light pulses with ∼1 μs duration. As opposed to frequency response peaked detectors, our approach allows for broadband quantum noise measurements. The equivalent noise charge (ENC) for two different hardware approaches is evaluated to 280 and 340 electrons per pulse, respectively, which corresponds to a dark noise equivalent photon number of n 3dB = 0.8 × 10 5 and n 3dB = 1.2 × 10 5 in the two approaches. Finally, we discuss the possibility of removing classical correlations in the output signal caused by detector imperfection by using double-correlated sampling methods

  11. Low-noise humidity controller for imaging water mediated processes in atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gaponenko, I., E-mail: iaroslav.gaponenko@unige.ch; Gamperle, L.; Herberg, K.; Muller, S. C.; Paruch, P. [DQMP, University of Geneva, 24 Quai E. Ansermet, 1211 Geneva 4 (Switzerland)

    2016-06-15

    We demonstrate the construction of a novel low-noise continuous flow humidity controller and its integration with a commercial variable-temperature atomic force microscope fluid cell, allowing precise control of humidity and temperature at the sample during nanoscale measurements. Based on wet and dry gas mixing, the design allows a high mechanical stability to be achieved by means of an ultrasonic atomiser for the generation of water-saturated gas, improving upon previous bubbler-based architectures. Water content in the flow is measured both at the inflow and outflow of the fluid cell, enabling the monitoring of water condensation and icing, and allowing controlled variation of the sample temperature independently of the humidity. To benchmark the performance of the controller, the results of detailed noise studies and time-based imaging of the formation of ice layers on highly oriented pyrolytic graphite are shown.

  12. High-Tc Superconducting Bolometer Noise Measurement Using Low Noise Transformers - Theory and Optimization

    Science.gov (United States)

    Aslam, Shahid; Jones, Hollis H.

    2011-01-01

    Care must always be taken when performing noise measurements on high-Tc superconducting materials to ensure that the results are not from the measurement system itself. One situation likely to occur is with low noise transformers. One of the least understood devices, it provides voltage gain for low impedance inputs (< 100 ), e.g., YBaCuO and GdBaCuO thin films, with comparatively lower noise levels than other devices for instance field effect and bipolar junction transistors. An essential point made in this paper is that because of the complex relationships between the transformer ports, input impedance variance alters the transformer s transfer function in particular, the low frequency cutoff shift. The transfer of external and intrinsic transformer noise to the output along with optimization and precautions are treated; all the while, we will cohesively connect the transfer function shift, the load impedance, and the actual noise at the transformer output.

  13. Low-noise magnetic observatory variometer with race-track sensors

    International Nuclear Information System (INIS)

    Janošek, M; Petrucha, V; Vlk, M

    2016-01-01

    We present a low-noise, high-stability observatory magnetometer with race-track sensors, as developed by the Czech Technical University in Prague for National Observatory of Athens. As opposed to the standard instruments, we used our novel race-track fluxgate sensors with planar oval core which were cut by state-of-the art pico-second UV-laser. The noise performance of the complete electronics and sensor chain is below 6 pT/√Hz @ 1 Hz. The electronics uses 24-bit 200-Hz A/D converter with simultaneous sampling and all digital processing is done in FPGA. The variometer with the sensors mounted on a MACOR cube has been successfully calibrated by scalar method. (paper)

  14. Nb{sub 3}Al thin film deposition for low-noise terahertz electronics

    Energy Technology Data Exchange (ETDEWEB)

    Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H [Group for Advanced Receiver Development and Onsala Space Observatory, Department of Radio- and Space Science, Chalmers University of Technology, SE 412 96 Gothenburg (Sweden)], E-mail: dimitar.dochev@chalmers.se

    2008-02-01

    Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb{sub 3}Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons.

  15. Nb3Al thin film deposition for low-noise terahertz electronics

    International Nuclear Information System (INIS)

    Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H

    2008-01-01

    Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb 3 Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons

  16. Low-Noise Operation of All-Fiber Femtosecond Cherenkov Laser

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Villanueva Ibáñez, Guillermo Eduardo; Lægsgaard, Jesper

    2013-01-01

    We investigate the noise properties of a femtosecond all-fiber Cherenkov radiation source with emission wavelength around 600 nm, based on an Yb-fiber laser and a highly-nonlinear photonic crystal fiber. A relative intensity noise as low as - 103 dBc/Hz, corresponding to 2.48 % pulse-to-pulse...... fluctuation in energy, was observed at the Cherenkov radiation output power of 4.3 mW, or 150 pJ pulse energy. This pulse-to-pulse fluctuation is at least 10.6 dB lower compared to spectrally-sliced supercontinuum sources traditionally used for ultrafast fiberbased generation at visible wavelengths. Low noise...... makes allfiber Cherenkov sources promising for biophotonics applications such as multi-photon microscopy, where minimum pulse-to-pulse energy fluctuation is required. We present the dependency of the noise figure on both the Cherenkov radiation output power and its spectrum....

  17. Low-noise analog readout channel for SDD in X-ray spectrometry

    Science.gov (United States)

    Atkin, E.; Gusev, A.; Krivchenko, A.; Levin, V.; Malankin, E.; Normanov, D.; Rotin, A.; Sagdiev, I.; Samsonov, V.

    2016-01-01

    A low-noise analog readout channel optimized for operation with the Silicon Drift Detectors (SDDs) with built-in JFET is presented. The Charge Sensitive Amplifier (CSA) operates in a pulse reset mode using the reset diode built-in the SDD detector. The shaper is a 6th order semi-Gaussian filter with switchable discrete shaping times. The readout channel provides the Equivalent Noise Charge (ENC) of 12e- (simulation) and input dynamic range of 30 keV . The measured energy resolution at the 5,89 keV line of a 55Fe X-ray source is 336 eV (FWHM). The channel was prototyped via Europractice in the AMS 350 nm process as miniASIC. The simulation and first measurement results are presented in the paper.

  18. Ultra-low noise TES bolometer arrays for SAFARI instrument on SPICA

    Science.gov (United States)

    Khosropanah, P.; Suzuki, T.; Ridder, M. L.; Hijmering, R. A.; Akamatsu, H.; Gottardi, L.; van der Kuur, J.; Gao, J. R.; Jackson, B. D.

    2016-07-01

    SRON is developing ultra-low noise Transition Edge Sensors (TESs) based on a superconducting Ti/Au bilayer on a suspended SiN island with SiN legs for the SAFARI instrument aboard the SPICA mission. We successfully fabricated TESs with very narrow (0.5-0.7 μm) and thin (0.25 μm) SiN legs on different sizes of SiN islands using deep reactiveion etching process. The pixel size is 840x840 μm2 and there are variety of designs with and without optical absorbers. For TESs without absorbers, we measured electrical NEPs as low as <1x10-19 W/√Hz with response time of 0.3 ms and reached the phonon noise limit. Using TESs with absorbers, we quantified the darkness of our setup and confirmed a photon noise level of 2x10-19 W/√Hz.

  19. Fabrication of Low-Noise TES Arrays for the SAFARI Instrument on SPICA

    Science.gov (United States)

    Ridder, M. L.; Khosropanah, P.; Hijmering, R. A.; Suzuki, T.; Bruijn, M. P.; Hoevers, H. F. C.; Gao, J. R.; Zuiddam, M. R.

    2016-07-01

    Ultra-low-noise transition edge sensors (TES) with noise equivalent power lower than 2 × 10^{-19} W/Hz^{1/2 } have been fabricated by SRON, which meet the sensitivity requirements for the far-infrared SAFARI instrument on space infrared telescope for cosmology and astrophysics. Our TES detector is based on a titanium/gold (Ti/Au) thermistor on a silicon nitride (SiN) island. The island is thermally linked with SiN legs to a silicon support structure at the bath temperature. The SiN legs are very thin (250 nm), narrow (500 nm), and long (above 300 {\\upmu } m); these dimensions are needed in leg-isolated bolometers to achieve the required level of sensitivity. In this paper, we describe the latest fabrication process for our TES bolometers with improved sensitivity.

  20. Low-noise, transformer-coupled resonant photodetector for squeezed state generation.

    Science.gov (United States)

    Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

    2017-10-01

    In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8×10 5 V/A, and the input current noise of less than 4.7 pA/Hz. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

  1. A single-to-differential low-noise amplifier with low differential output imbalance

    International Nuclear Information System (INIS)

    Duan Lian; Ma Chengyan; He Xiaofeng; Ye Tianchun; Huang Wei; Jin Yuhua

    2012-01-01

    This paper presents a single-ended input differential output low-noise amplifier intended for GPS applications. We propose a method to reduce the gain/amplitude and phase imbalance of a differential output exploiting the inductive coupling of a transformer or center-tapped differential inductor. A detailed analysis of the theory of imbalance reduction, as well as a discussion on the principle of choosing the dimensions of a transformer, are given. An LNA has been implemented using TSMC 0.18 μm technology with ESD-protected. Measurement on board shows a voltage gain of 24.6 dB at 1.575 GHz and a noise figure of 3.2 dB. The gain imbalance is below 0.2 dB and phase imbalance is less than 2 degrees. The LNA consumes 5.2 mA from a 1.8 V supply. (semiconductor integrated circuits)

  2. A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications

    International Nuclear Information System (INIS)

    Zhang Jihong; Bai Xuefei; Huang Lu

    2013-01-01

    A wideband inductorless low noise amplifier for digital TV tuner applications is presented. The proposed LNA scheme uses a composite NMOS/PMOS cross-coupled transistor pair to provide partial cancellation of noise generated by the input transistors. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed LNA achieves 12.2–15.2 dB voltage gain from 300 to 900 MHz, the noise figure is below 3.1 dB and has a minimum value of 2.3 dB, and the best input-referred 1-dB compression point (IP1dB) is − 17 dBm at 900 MHz. The core consumes 7 mA current with a supply voltage of 1.8 V and occupies an area of 0.5 × 0.35 mm 2 . (semiconductor integrated circuits)

  3. A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

    Science.gov (United States)

    Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

    2011-04-01

    This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

  4. A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

    International Nuclear Information System (INIS)

    Binkley, D.M.; Paulus, M.J.; Casey, M.E.; Rochelle, J.M.

    1992-01-01

    In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2μ CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6nV/Hz 1/2 , and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--kΩ to 50-kΩ range

  5. Using the Moon As A Low-Noise Seismic Detector For Strange Quark Nuggets

    Science.gov (United States)

    Banerdt, W. Bruce; Chui, Talso; Griggs, Cornelius E.; Herrin, Eugene T.; Nakamura, Yosio; Paik, Ho Jung; Penanen, Konstantin; Rosenbaum, Doris; Teplitz, Vigdor L.; Young, Joseph

    2006-01-01

    Strange quark matter made of up, down and strange quarks has been postulated by Witten [1]. Strange quark matter would be nearly charge neutral and would have density of nuclear matter (10(exp 14) gm/cu cm). Witten also suggested that nuggets of strange quark matter, or strange quark nuggets (SQNs), could have formed shortly after the Big Bang, and that they would be viable candidates for cold dark matter. As suggested by de Rujula and Glashow [2], an SQN may pass through a celestial body releasing detectable seismic energy along a straight line. The Moon, being much quieter seismically than the Earth, would be a favorable place to search for such events. We review previous searches for SQNs to illustrate the parameter space explored by using the Moon as a low-noise detector of SQNs. We also discuss possible detection schemes using a single seismometer, and using an International Lunar Seismic Network.

  6. Low-noise humidity controller for imaging water mediated processes in atomic force microscopy

    Science.gov (United States)

    Gaponenko, I.; Gamperle, L.; Herberg, K.; Muller, S. C.; Paruch, P.

    2016-06-01

    We demonstrate the construction of a novel low-noise continuous flow humidity controller and its integration with a commercial variable-temperature atomic force microscope fluid cell, allowing precise control of humidity and temperature at the sample during nanoscale measurements. Based on wet and dry gas mixing, the design allows a high mechanical stability to be achieved by means of an ultrasonic atomiser for the generation of water-saturated gas, improving upon previous bubbler-based architectures. Water content in the flow is measured both at the inflow and outflow of the fluid cell, enabling the monitoring of water condensation and icing, and allowing controlled variation of the sample temperature independently of the humidity. To benchmark the performance of the controller, the results of detailed noise studies and time-based imaging of the formation of ice layers on highly oriented pyrolytic graphite are shown.

  7. Low-noise humidity controller for imaging water mediated processes in atomic force microscopy

    International Nuclear Information System (INIS)

    Gaponenko, I.; Gamperle, L.; Herberg, K.; Muller, S. C.; Paruch, P.

    2016-01-01

    We demonstrate the construction of a novel low-noise continuous flow humidity controller and its integration with a commercial variable-temperature atomic force microscope fluid cell, allowing precise control of humidity and temperature at the sample during nanoscale measurements. Based on wet and dry gas mixing, the design allows a high mechanical stability to be achieved by means of an ultrasonic atomiser for the generation of water-saturated gas, improving upon previous bubbler-based architectures. Water content in the flow is measured both at the inflow and outflow of the fluid cell, enabling the monitoring of water condensation and icing, and allowing controlled variation of the sample temperature independently of the humidity. To benchmark the performance of the controller, the results of detailed noise studies and time-based imaging of the formation of ice layers on highly oriented pyrolytic graphite are shown.

  8. Linearizing of Low Noise Power Amplifier Using 5.8GHz Double Loop Feedforward Linearization Technique

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mokif Obais

    2017-05-01

    Full Text Available In this paper, a double loop feedforward linearization technique is analyzed and built with a MMIC low noise amplifier “HMC753” as main amplifier and a two-stage class-A power amplifier as error amplifier. The system is operated with 5V DC supply at a center frequency of 5.8GHz and a bandwidth of 500MHz. The proposed technique, increases the linearity of the MMIC amplifier from 18dBm at 1dB compression point to more than 26dBm. In addition, the proposed system is tested with OFDM signal and it reveals good response in maximizing the linearity region and eliminating distortions. The proposed system is designed and simulated onAdvanced Wave Research-Microwave Office (AWR-MWO.

  9. Jet Propulsion Laboratory/NASA Lewis Research Center space qualified hybrid high temperature superconducting/semiconducting 7.4 GHz low-noise downconverter for NRL HTSSE-II program

    International Nuclear Information System (INIS)

    Javadi, H.H.S.; Bowen, J.G.; Rascoe, D.L.; Chorey, C.M.

    1996-01-01

    A deep space satellite downconverter receiver was proposed by Jet Propulsion Laboratory (JPL) and NASA Lewis Research Center (LeRC) for the Naval Research Laboratory's (NRL) high temperature superconductivity space experiment, phase-II (HTSSE-II) program. Space qualified low-noise cryogenic downconverter receivers utilizing thin-film high temperature superconducting (HTS) passive circuitry and semiconductor active devices were developed and delivered to NRL. The downconverter consists of an HTS preselect filter, a cryogenic low-noise amplifier, a cryogenic mixer, and a cryogenic oscillator with an HTS resonator. HTS components were inserted as the front-end filter and the local oscillator resonator for their superior 77 K performance over the conventional components. The semiconducting low noise amplifier also benefited from cooling to 77 K. The mixer was designed specifically for cryogenic applications and provided low conversion loss and low power consumption. In addition to an engineering model, two space qualified units (qualification, flight) were built and delivered to NRL. Manufacturing, integration and test of the space qualified downconverters adhered to the requirements of JPL class-D space instruments and partially to MIL-STD-883D specifications. The qualification unit has ∼50 K system noise temperature which is a factor of three better than a conventional downconverter at room temperature

  10. A low noise ASIC for two dimensional neutron gas detector with performance of high spatial resolution (Contract research)

    International Nuclear Information System (INIS)

    Yamagishi, Hideshi; Toh, Kentaro; Nakamura, Tatsuya; Sakasai, Kaoru; Soyama, Kazuhiko

    2012-02-01

    An ASD-ASIC (Amplifier-Shaper-Discriminator ASIC) with fast response and low noise performances has been designed for two-dimensional position sensitive neutron gas detectors (InSPaD). The InSPaD is a 2D neutron detector system with 3 He gas and provides a high spatial resolution by making distinction between proton and triton particles generated in the gas chamber. The new ASD-ASIC is required to have very low noise, a wide dynamic range, good output linearity and high counting rate. The new ASD-ASIC has been designed by using CMOS and consisted of 64-channel ASDs, a 16-channel multiplexer with LVTTL drivers and sum amplifier system for summing all analog signals. The performances were evaluated by the Spice simulation. It was confirmed that the new ASD-ASIC had very low noise performance, wide dynamic range and fast signal processing functions. (author)

  11. Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

    International Nuclear Information System (INIS)

    Bickman, S.; DeMille, D.

    2005-01-01

    Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/√(Hz), can recover from a large scattered light pulse within 10 μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/√(Hz), also can recover from a large scattered light pulse within 10 μs, and has a bandwidth of 1 MHz

  12. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

    2018-01-01

    . The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common-mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L......In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices...... are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four-layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained...

  13. Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

    Directory of Open Access Journals (Sweden)

    H. MOSBAHI

    2014-05-01

    Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

  14. Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils.

    Science.gov (United States)

    Lu, Jonathan Y; Grafendorfer, Thomas; Zhang, Tao; Vasanawala, Shreyas; Robb, Fraser; Pauly, John M; Scott, Greig C

    2016-12-01

    Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.

  15. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Das, Palash; Biswas, Dhrubes

    2014-01-01

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT

  16. EUDP project 'Low noise airfoil' - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Bertagnolio, F. (ed.)

    2012-06-15

    This document summarizes the scientific results achieved during the EUDP-funded project 'Low-Noise Airfoil'. The goals of this project are, on one side to develop a measurement technique that permits the evaluation of trailing edge noise in a classical aerodynamic wind tunnel, and on the other side to develop and implement a design procedure to manufacture airfoil profiles with low noise emission. The project involved two experimental campaigns: one in the LM Wind Power wind tunnel, a classical aerodynamic wind tunnel, in Lunderskov (Denmark), the second one in the Virginia Tech Stability Wind Tunnel at the Aerospace and Ocean Engineering Department of Virginia Tech (Blacksburg, VA, USA), also a classical aerodynamic wind tunnel but equipped with an anechoic chamber that allow to perform acoustic measurements. On the theoretical side, the above experiments yield a series of model validations and improvements. In particular, the so-called TNO trailing edge noise model could be significantly improved by introducing turbulence anisotropy in its formulation, as well as the influence of the boundary layer mean pressure gradient. This two characteristics are inherent to airfoil flows but were neglected in the original approach. In addition, the experimental results are confronted to detailed Large Eddy Simulations of the airfoil flow giving more insight into the flow turbulence characteristics. The methodology which consists in measuring surface pressure spectra directly on the airfoil surface using flush-mounted microphones in order to evaluate far-field noise emission using additional theoretical results has been validated. This technique presents the advantage that it can easily be used in a classical aerodynamic wind tunnel and does not require the use of an anechoic facility. It was developed as a substitute to the original plan that consisted in measuring acoustic waves using hot-wire velocimetry. This last technique proved ineffective in the LM Wind

  17. Low-Noise CMOS Circuits for On-Chip Signal Processing in Focal-Plane Arrays

    Science.gov (United States)

    Pain, Bedabrata

    The performance of focal-plane arrays can be significantly enhanced through the use of on-chip signal processing. Novel, in-pixel, on-focal-plane, analog signal-processing circuits for high-performance imaging are presented in this thesis. The presence of a high background-radiation is a major impediment for infrared focal-plane array design. An in-pixel, background-suppression scheme, using dynamic analog current memory circuit, is described. The scheme also suppresses spatial noise that results from response non-uniformities of photo-detectors, leading to background limited infrared detector readout performance. Two new, low-power, compact, current memory circuits, optimized for operation at ultra-low current levels required in infrared-detection, are presented. The first one is a self-cascading current memory that increases the output impedance, and the second one is a novel, switch feed-through reducing current memory, implemented using error-current feedback. This circuit can operate with a residual absolute -error of less than 0.1%. The storage-time of the memory is long enough to also find applications in neural network circuits. In addition, a voltage-mode, accurate, low-offset, low-power, high-uniformity, random-access sample-and-hold cell, implemented using a CCD with feedback, is also presented for use in background-suppression and neural network applications. A new, low noise, ultra-low level signal readout technique, implemented by individually counting photo-electrons within the detection pixel, is presented. The output of each unit-cell is a digital word corresponding to the intensity of the photon flux, and the readout is noise free. This technique requires the use of unit-cell amplifiers that feature ultra-high-gain, low-power, self-biasing capability and noise in sub-electron levels. Both single-input and differential-input implementations of such amplifiers are investigated. A noise analysis technique is presented for analyzing sampled

  18. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  19. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  20. Development of Low-Noise Small-Area 24 GHz CMOS Radar Sensor

    Directory of Open Access Journals (Sweden)

    Min Yoon

    2016-01-01

    Full Text Available We present a low-noise small-area 24 GHz CMOS radar sensor for automotive collision avoidance. This sensor is based on direct-conversion pulsed-radar architecture. The proposed circuit is implemented using TSMC 0.13 μm RF (radio frequency CMOS (fT/fmax=120/140 GHz technology, and it is powered by a 1.5 V supply. This circuit uses transmission lines to reduce total chip size instead of real bulky inductors for input and output impedance matching. The layout techniques for RF are used to reduce parasitic capacitance at the band of 24 GHz. The proposed sensor has low cost and low power dissipation since it is realized using CMOS process. The proposed sensor showed the lowest noise figure of 2.9 dB and the highest conversion gain of 40.2 dB as compared to recently reported research results. It also showed small chip size of 0.56 mm2, low power dissipation of 39.5 mW, and wide operating temperature range of −40 to +125°C.

  1. NASA's Pursuit of Low-Noise Propulsion for Low-Boom Commercial Supersonic Vehicles

    Science.gov (United States)

    Bridges, James; Brown, Clifford A.; Seidel, Jonathan A.

    2018-01-01

    Since 2006, when the Fundamental Aeronautics Program was instituted within NASA's Aeronautics Mission Directorate, there has been a Project looking at the technical barriers to commercial supersonic flight. Among the barriers is the noise produced by aircraft during landing and takeoff. Over the years that followed, research was carried out at NASA aeronautics research centers, often in collaboration with academia and industry, addressing the problem. In 2013, a high-level milestone was established, described as a Technical Challenge, with the objective of demonstrating the feasibility of a low-boom supersonic airliner that could meet current airport noise regulations. The Technical Challenge was formally called "Low Noise Propulsion for Low Boom Aircraft", and was completed in late 2016. This paper reports the technical findings from this Technical Challenge, reaching back almost 10 years to review the technologies and tools that were developed along the way. It also discusses the final aircraft configuration and propulsion systems required for a supersonic civilian aircraft to meet noise regulations using the technologies available today. Finally, the paper documents the model-scale tests that validated the acoustic performance of the study aircraft.

  2. A low-noise MEMS accelerometer for unattended ground sensor applications

    Science.gov (United States)

    Speller, Kevin E.; Yu, Duli

    2004-09-01

    A low-noise micro-machined servo accelerometer has been developed for use in Unattended Ground Sensors (UGS). Compared to conventional coil-and-magnet based velocity transducers, this Micro-Electro-Mechanical System (MEMS) accelerometer offers several key benefits for battlefield monitoring. Many UGS require a compass to determine deployment orientation with respect to magnetic North. This orientation information is critical for determining the bearing of incoming signals. Conventional sensors with sensing technology based on a permanent magnet can cause interference with a compass when used in close proximity. This problem is solved with a MEMS accelerometer which does not require any magnetic materials. Frequency information below 10 Hz is valuable for identification of signal sources. Conventional seismometers used in UGS are typically limited in frequency response from 20 to 200 Hz. The MEMS accelerometer has a flat frequency response from DC to 5 kHz. The wider spectrum of signals received improves detection, classification and monitoring on the battlefield. The DC-coupled output of the MEMS accelerometer also has the added benefit of providing tilt orientation data for the deployed UGS. Other performance parameters of the MEMS accelerometer that are important to UGS such as size, weight, shock survivability, phase response, distortion, and cross-axis rejection will be discussed. Additionally, field test data from human footsteps recorded with the MEMS accelerometer will be presented.

  3. The Majorana Low-noise Low-background Front-end Electronics

    Science.gov (United States)

    Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Combs, D. C.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, J.; MacMullin, S.; Martin, R. D.; Meijer, S.; Mertens, S.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Suriano, A. M.; Thompson, J.; Timkin, V.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Young, A. R.; Yu, C.-H.; Yumatov, V.

    The MAJORANA DEMONSTRATOR will search for the neutrinoless double beta decay (ββ(0ν)) of the isotope 76Ge with a mixed array of enriched and natural germanium detectors. In view of the next generation of tonne-scale germanium-based ββ(0ν)-decay searches, a major goal of the MAJORANA DEMONSTRATOR is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the 76Ge ββ(0ν)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolution performances. We present here the low-noise low- background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the MAJORANA DEMONSTRATOR. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.

  4. Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

    Energy Technology Data Exchange (ETDEWEB)

    Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P., E-mail: David.Pappas@NIST.gov [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

    2016-01-04

    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

  5. Novel matched amplifiers with low noise positive feedback. Part II: Resistive-capacitive feedback

    Science.gov (United States)

    Bruck, Y.; Zakharenko, V.

    2010-02-01

    This article is a continuation of consideration for an amplifier with resistive positive feedback (RPF) (Bruck (2008), 'Novel Matched LNA with Low Noise Positive Feedback. Part 1: General Features and Resistive Feedback', International Journal of Electronics, 95, 441-456). We propose here new configuration schematics of a transformer-less selective LNA with resistive-capacitive positive feedback (RCPF). A circuit of an amplifier with a transistor connected into a circuit with a common base (CB) configuration is analysed in detail. RCPF and RPF circuits are compared. It is shown that the LNA RCPF provides any pass-band, a good level of input and output matching, a minimum noise temperature which is significantly lower than that of the LNA RPF, a rather high linearity, and stability of amplification. The simulation results and some experimental data for the amplifiers intended for use in the LOFAR radiotelescope (Konovalenko et al. (2003), 'Thirty Element Array Antenna as a Prototype of a Huge Low-Frequency Radio Telescope,' Experimental Astronomy, 16, 149-164; Konovalenko (2007), 'Ukrainian Contribution to LOFAR', A scientific workshop, organised by LOFAR/ASTRON' Emmen, Netherlands, 23-27. http://www.lofar.org/workshop) are given. It is assumed that such devices are of a special interest for high-frequency integral circuits (IC).

  6. Perancangan Low Noise Amplifier dengan Teknik Non Simultaneous Conjugate Match untuk Aplikasi Radar S-Band

    Directory of Open Access Journals (Sweden)

    Yana Taryana

    2016-06-01

    Full Text Available Radar merupakan sistem pemancar dan penerima gelombang elektromagnetik untuk mendeteksi, mengukur jarak dan membuat peta benda benda seperti pesawat terbang, kapal laut, kendaran bermotor dan informasi cuaca. Salah satu kendala yang dihadapi pada sistem radar adalah sinyal pantulan yang memiliki daya yang rendah sehingga kualitas penerimaan menjadi kurang baik. Untuk mengatasi kendala tersebut dibutuhkan penguat daya pada sistem penerima yaitu Low Noise Amplifier (LNA. Oleh karena itu, tulisan ini memaparkan perancangan LNA dengan menggunakan teknik Non Simultaneous Conjugate Match (NSCM untuk aplikasi radar S-Band. Teknik ini memberikan kemudahan dalam menentukan nilai trade off (TO untuk nilai gain, noise figure (NF dan Voltage Standing Wave Ratio (VSWR yang diinginkan. Dalam proses perancangannya, perangkat lunak Agilent Design System (ADS 2011 digunakan untuk mendapatkan hubungan antara lingkaran gain, lingkaran NF, lingkaran VSWR, dan lingkaran mismatch factor (M. Dari hubungan tersebut diperoleh nilai impedansi masukan dan keluaran dari komponen aktif. Dalam tulisan ini, LNA dirancang dua tingkat untuk mendapatkan penguatan yang tinggi. Masing-masing tingkat menggunakan komponen aktif BJT BFP420 dengan penguatan dirancang sebesar 13,50 dB untuk tingkat pertama dan kedua, dan M sebesar 0,98. Sedangkan untuk saluran penyesuai impedansinya menggunakan substrat teflon fiberglass DiClad527. Hasil simulasi menunjukkan karakteristik LNA pada frekuensi 3 GHz yaitu gain sebesar 28,80 dB, NF sebesar 2,80 dB, VSWRin sebesar 1,05 dan VSWRout sebesar 1,1.

  7. Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

    Science.gov (United States)

    Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

    2016-01-01

    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

  8. Fabrication of Low Noise Borosilicate Glass Nanopores for Single Molecule Sensing.

    Directory of Open Access Journals (Sweden)

    Jayesh A Bafna

    Full Text Available We show low-cost fabrication and characterization of borosilicate glass nanopores for single molecule sensing. Nanopores with diameters of ~100 nm were fabricated in borosilicate glass capillaries using laser assisted glass puller. We further achieve controlled reduction and nanometer-size control in pore diameter by sculpting them under constant electron beam exposure. We successfully fabricate pore diameters down to 6 nm. We next show electrical characterization and low-noise behavior of these borosilicate nanopores and compare their taper geometries. We show, for the first time, a comprehensive characterization of glass nanopore conductance across six-orders of magnitude (1M-1μM of salt conditions, highlighting the role of buffer conditions. Finally, we demonstrate single molecule sensing capabilities of these devices with real-time translocation experiments of individual λ-DNA molecules. We observe distinct current blockage signatures of linear as well as folded DNA molecules as they undergo voltage-driven translocation through the glass nanopores. We find increased signal to noise for single molecule detection for higher trans-nanopore driving voltages. We propose these nanopores will expand the realm of applications for nanopore platform.

  9. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    International Nuclear Information System (INIS)

    Paul, S. F.; Marsala, R.

    2006-01-01

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

  10. Self Oscillating Mixer with Dielectric Resonator for Low Noise Block Application

    Directory of Open Access Journals (Sweden)

    Endon Bharata

    2011-08-01

    Full Text Available In this paper, the development of a self oscillating mixer (SOM as part of a low noise block (LNB for a satellite television receiver is investigated numerically and experimentally. In contrast to other mixers, the developed SOM requires no separate local oscillator as it generates own local oscillator signal. The SOM is developed using a monolithic microwave integrated circuit (MMIC comprised of two bipolar transistors coupled as a Darlington pair and a dielectric resonator to establish a local oscillator signal. The SOM is designed to oscillate at 3.62GHz driven from 50W signal generator. The prototype of SOM is fabricated on a dielectric substrate of glass-reinforced hydrocarbon/ceramic lamination (RO4350B board which has a thickness of 0.762mm and relative permittivity of 3.66. The prototype is then characterized experimentally and exhibits a conversion gain of 8dB with the input and output voltage standing wave ratio (VSWR less than 2 across the 2520MHz to 2670MHz operating frequency band.

  11. A low-noise ac-bridge amplifier for ballistocardiogram measurement on an electronic weighing scale

    International Nuclear Information System (INIS)

    Inan, O T; Kovacs, G T A

    2010-01-01

    Ballistocardiography is a non-invasive technique for evaluating cardiovascular health. This note presents an ac-bridge amplifier for low-noise ballistocardiogram (BCG) recording from a modified weighing scale. The strain gauges in a commercial scale were excited by an ac source—square or sine wave—and the differential output voltage resulting from the BCG was amplified and demodulated synchronously with the excitation waveform. A standard BCG amplifier, with a simple dc-bridge excitation, was also built and the performance was compared to both the square- and sine-wave excited ac-bridge amplifiers. The total input-referred voltage noise (rms) integrated over the relevant BCG bandwidth of 0.3–10 Hz was found to be 30 nV (square wave source) or 25 nV (sine-wave source) for the ac-bridge amplifier and 52 nV for the standard amplifier: an improvement of 4.8 dB or 6 dB, respectively. These correspond to input-referred force noise (rms) values of 5 mN, 4 mN and 8.3 mN. The improvement in SNR was also observed in recorded waveforms from a seated subject whose BCG signal was measured with both dc- and ac-bridge circuits. (note)

  12. Instrumentation for low noise nanopore-based ionic current recording under laser illumination

    Science.gov (United States)

    Roelen, Zachary; Bustamante, José A.; Carlsen, Autumn; Baker-Murray, Aidan; Tabard-Cossa, Vincent

    2018-01-01

    We describe a nanopore-based optofluidic instrument capable of performing low-noise ionic current recordings of individual biomolecules under laser illumination. In such systems, simultaneous optical measurements generally introduce significant parasitic noise in the electrical signal, which can severely reduce the instrument sensitivity, critically hindering the monitoring of single-molecule events in the ionic current traces. Here, we present design rules and describe simple adjustments to the experimental setup to mitigate the different noise sources encountered when integrating optical components to an electrical nanopore system. In particular, we address the contributions to the electrical noise spectra from illuminating the nanopore during ionic current recording and mitigate those effects through control of the illumination source and the use of a PDMS layer on the SiNx membrane. We demonstrate the effectiveness of our noise minimization strategies by showing the detection of DNA translocation events during membrane illumination with a signal-to-noise ratio of ˜10 at 10 kHz bandwidth. The instrumental guidelines for noise minimization that we report are applicable to a wide range of nanopore-based optofluidic systems and offer the possibility of enhancing the quality of synchronous optical and electrical signals obtained during single-molecule nanopore-based analysis.

  13. Fully integrated low-noise readout circuit with automatic offset cancellation loop for capacitive microsensors.

    Science.gov (United States)

    Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-Il Dan; Ko, Hyoungho

    2015-10-14

    Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm². The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of -250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

  14. Fully Integrated Low-Noise Readout Circuit with Automatic Offset Cancellation Loop for Capacitive Microsensors

    Directory of Open Access Journals (Sweden)

    Haryong Song

    2015-10-01

    Full Text Available Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS process with an active area of 1.76 mm2. The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of −250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

  15. CASTOR a VLSI CMOS mixed analog-digital circuit for low noise multichannel counting applications

    International Nuclear Information System (INIS)

    Comes, G.; Loddo, F.; Hu, Y.; Kaplon, J.; Ly, F.; Turchetta, R.; Bonvicini, V.; Vacchi, A.

    1996-01-01

    In this paper we present the design and first experimental results of a VLSI mixed analog-digital 1.2 microns CMOS circuit (CASTOR) for multichannel radiation detectors applications demanding low noise amplification and counting of radiation pulses. This circuit is meant to be connected to pixel-like detectors. Imaging can be obtained by counting the number of hits in each pixel during a user-controlled exposure time. Each channel of the circuit features an analog and a digital part. In the former one, a charge preamplifier is followed by a CR-RC shaper with an output buffer and a threshold discriminator. In the digital part, a 16-bit counter is present together with some control logic. The readout of the counters is done serially on a common tri-state output. Daisy-chaining is possible. A 4-channel prototype has been built. This prototype has been optimised for use in the digital radiography Syrmep experiment at the Elettra synchrotron machine in Trieste (Italy): its main design parameters are: shaping time of about 850 ns, gain of 190 mV/fC and ENC (e - rms)=60+17 C (pF). The counting rate per channel, limited by the analog part, can be as high as about 200 kHz. Characterisation of the circuit and first tests with silicon microstrip detectors are presented. They show the circuit works according to design specification and can be used for imaging applications. (orig.)

  16. A low noise preamplifier with optoelectronic overload protection for radioactivity measurement

    International Nuclear Information System (INIS)

    Sephton, J.P.; Williams, J.M.; Johansson, L.C.; Philips, H.C.

    2012-01-01

    Pulses from detectors used for radioactivity measurement can vary in size by several orders of magnitude. Large pulses will lead to saturation at the preamplifier output and extension of the pulse length. As a consequence, the dead time of the system increases and pulses may be lost. Electronic design techniques employed to protect against overloading tend to increase the amplifier noise level. However, an optoelectronic method of overload protection has been devised which has only a negligible effect on noise. An infrared light emitting diode interfaced to the output of the preamplifier is linked by fibre optic cable to an ultra-low leakage photodiode at the input. The conduction of the photodiode increases with the amplitude of the preamplifier output signal. Excess current is thereby prevented from entering the preamplifier and causing saturation. The preamplifier has been tested on 4π beta–gamma and gas counting systems and found to give good protection against overloading. - Highlights: ► A preamplifier for radioactivity measurements has been developed. ► Low noise. ► Current sensitive. ► Optoelectronic overload protection.

  17. Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

    Science.gov (United States)

    Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

    2009-05-01

    This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

  18. Op-amp based low noise amplifier for magnetic particle spectroscopy

    Directory of Open Access Journals (Sweden)

    Malhotra Ankit

    2017-09-01

    Full Text Available Magnetic particle spectrometry (MPS is a novel technique used to measure the magnetization response of superparamagnetic iron oxide nanoparticles (SPIONs. Therefore, it is one of the most important tools for the characterization of the SPIONs for imaging modalities such as magnetic particle imaging (MPI and Magnetic Resonance Imaging (MRI. In MPS, change in the particle magnetization induces a voltage in a dedicated receive coil. The amplitude of the signal can be very low (ranging from a few nV to 100 μV depending upon the concentration of the nanoparticles. Hence, the received signal needs to be amplified with a low noise amplifier (LNA. LNA’s paramount task is to amplify the received signal while keeping the noise induced by its own circuitry minimum. In the current research, we purpose modeling, design, and development of a prototyped LNA for MPS. The designed prototype LNA is based on the parallelization technique of Op-amps. The prototyped LNA consists of 16 Op-amps in parallel and is manufactured on a printed circuit board (PCB, with a size of 110.38 mm × 59.46 mm and 234 components. The input noise of the amplifier is approx. 546 pV/√Hz with a noise figure (NF of approx. 1.4 dB with a receive coil termination. Furthermore, a comparison between the prototyped LNA and a commercially available amplifier is shown.

  19. Low-Gain, Low-Noise Integrated Neuronal Amplifier for Implantable Artifact-Reduction Recording System

    Directory of Open Access Journals (Sweden)

    Abdelhamid Benazzouz

    2013-09-01

    Full Text Available Brain neuroprostheses for neuromodulation are being designed to monitor the neural activity of the brain in the vicinity of the region being stimulated using a single macro-electrode. Using a single macro-electrode, recent neuromodulation studies show that recording systems with a low gain neuronal amplifier and successive amplifier stages can reduce or reject stimulation artifacts. These systems were made with off-the-shelf components that are not amendable for future implant design. A low-gain, low-noise integrated neuronal amplifier (NA with the capability of recording local field potentials (LFP and spike activity is presented. In vitro and in vivo characterizations of the tissue/electrode interface, with equivalent impedance as an electrical model for recording in the LFP band using macro-electrodes for rodents, contribute to the NA design constraints. The NA occupies 0.15 mm2 and dissipates 6.73 µW, and was fabricated using a 0.35 µm CMOS process. Test-bench validation indicates that the NA provides a mid-band gain of 20 dB and achieves a low input-referred noise of 4 µVRMS. Ability of the NA to perform spike recording in test-bench experiments is presented. Additionally, an awake and freely moving rodent setup was used to illustrate the integrated NA ability to record LFPs, paving the pathway for future implantable systems for neuromodulation.

  20. Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    J. Sturm

    2014-04-01

    Full Text Available The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.

  1. The normalized interaural correlation : accounting for NoSp thresholds obtained with Gaussian and 'low-noise' masking noise

    NARCIS (Netherlands)

    Bernstein, L.R.; Par, van de S.L.J.D.E.; Trahiotis, C.T.

    1999-01-01

    Recently, [J. Acoust. Soc. Am. 103, 2578–2589 (1998)] and [J. Acoust. Soc. Am. 103, 2573–2577 (1998)] independently reported that greater masking of interaurally phase-reversed (Sp) tones was produced by diotic low-noise noise than by diotic Gaussian noise. Based on quantitative analyses, Eddins and

  2. Column-Parallel Single Slope ADC with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors

    NARCIS (Netherlands)

    Chen, Y.; Theuwissen, A.J.P.; Chae, Y.

    2011-01-01

    This paper presents a low noise CMOS image sensor (CIS) using 10/12 bit configurable column-parallel single slope ADCs (SS-ADCs) and digital correlated multiple sampling (CMS). The sensor used is a conventional 4T active pixel with a pinned-photodiode as photon detector. The test sensor was

  3. Emerging GaN-based HEMTs for mechanical sensing within harsh environments

    Science.gov (United States)

    Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

    2014-06-01

    Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

  4. Rapid manufacturing of low-noise membranes for nanopore sensors by trans-chip illumination lithography

    International Nuclear Information System (INIS)

    Janssen, Xander J A; Jonsson, Magnus P; Plesa, Calin; Soni, Gautam V; Dekker, Cees; Dekker, Nynke H

    2012-01-01

    In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane supported on a silicon chip can be rapidly fabricated using standard microfabrication methods, chips with additional insulating layers beyond the membrane region can provide significantly lower noise levels, but at the expense of requiring more costly and time-consuming fabrication steps. Here we present a novel fabrication protocol that overcomes this issue by enabling rapid and reproducible manufacturing of low-noise membranes for nanopore experiments. The fabrication protocol, termed trans-chip illumination lithography, is based on illuminating a membrane-containing wafer from its backside such that a photoresist (applied on the wafer’s top side) is exposed exclusively in the membrane regions. Trans-chip illumination lithography permits the local modification of membrane regions and hence the fabrication of nanopore chips containing locally patterned insulating layers. This is achieved while maintaining a well-defined area containing a single thin membrane for nanopore drilling. The trans-chip illumination lithography method achieves this without relying on separate masks, thereby eliminating time-consuming alignment steps as well as the need for a mask aligner. Using the presented approach, we demonstrate rapid and reproducible fabrication of nanopore chips that contain small (12 μm × 12 μm) free-standing silicon nitride membranes surrounded by insulating layers. The electrical noise characteristics of these nanopore chips are shown to be superior to those of simpler designs without insulating layers and comparable in quality to more complex designs that are more challenging to fabricate. (paper)

  5. Design of low noise airfoil with high aerodynamic performance for use on small wind turbines

    Institute of Scientific and Technical Information of China (English)

    Taehyung; KIM; Seungmin; LEE; Hogeon; KIM; Soogab; LEE

    2010-01-01

    Wind power is one of the most reliable renewable energy sources and internationally installed capacity is increasing radically every year.Although wind power has been favored by the public in general,the problem with the impact of wind turbine noise on people living in the vicinity of the turbines has been increased.Low noise wind turbine design is becoming more and more important as noise is spreading more adverse effect of wind turbine to public.This paper demonstrates the design of 10 kW class wind turbines,each of three blades,a rotor diameter 6.4 m,a rated rotating speed 200 r/min and a rated wind speed 10 m/s.The optimized airfoil is dedicated for the 75% spanwise position because the dominant source of a wind turbine blade is trailing edge noise from the outer 25% of the blade.Numerical computations are performed for incompressible flow and for Mach number at 0.145 and for Reynolds numbers at 1.02×106 with a lift performance,which is resistant to surface contamination and turbulence intensity.The objectives in the design process are to reduce noise emission,while sustaining high aerodynamic efficiency.Dominant broadband noise sources are predicted by semi-empirical formulas composed of the groundwork by Brooks et al.and Lowson associated with typical wind turbine operation conditions.During the airfoil redesign process,the aerodynamic performance is analyzed to reduce the wind turbine power loss.The results obtained from the design process show that the design method is capable of designing airfoils with reduced noise using a commercial 10 kW class wind turbine blade airfoil as a basis.Therefore,the new optimized airfoil showing 2.9 dB reductions of total sound pressure level(SPL) and higher aerodynamic performance are achieved.

  6. Seismic and resistivity anisotropy analysis at the Low-Noise Underground Laboratory (LSBB) of Rustrel (France)

    Science.gov (United States)

    Zeyen, H. J.; Bereš, J.; Gaffet, S.; Sénéchal, G.; Rousset, D.; Pessel, M.

    2011-12-01

    Many geological materials exhibit anisotropic behaviour. A limestone massif, especially if cracked with fractures and faults in a predominant orientation is expected to manifest seismic and electric resistivity anisotropy. Seismic velocity within air- or water-filled cracks is smaller than in the rock matrix. Therefore, the velocity parallel to fractures, controlled mainly by the rock matrix, is expected to be faster than perpendicular to the fractures, where waves have to cross fractures and rock matrix. Seismic and resistivity measurements were conducted in three underground galleries of the Low-Noise Underground Gallery (LSBB) in southern France forming a horse-shoe setting. The galleries are located inside a karstic limestone massif. Around 22500 first arrival travel-times were picked and different types of pole-pole and dipole-dipole resistivity measurement were carried out in parallel. Resistivities and velocities vary strongly with direction of observation. The direction of fast velocities is at right angle with the one of slow velocities, a typical sign for anisotropy. Observation of a system of subparallel fractures allows to approximate the actual rock anisotropy by a horizontal transverse isotropy model. The dataset was treated by different approaches, including simple cosine fit, inversion of average anisotropy parameters using a Monte-Carlo approach, isotropic and anisotropic tomography inversion. All of the above confirm the directions of fast and slow velocities (30°N and 120°N respectively) and an anisotropy of about 10%. Common measurements of seismic and resistivity data at different periods of the year will have the potential to determine quantitatively the fracture density and the free water content in this karst massif.

  7. Low noise 874 GHz receivers for the International Submillimetre Airborne Radiometer (ISMAR)

    Science.gov (United States)

    Hammar, A.; Sobis, P.; Drakinskiy, V.; Emrich, A.; Wadefalk, N.; Schleeh, J.; Stake, J.

    2018-05-01

    We report on the development of two 874 GHz receiver channels with orthogonal polarizations for the International Submillimetre Airborne Radiometer. A spline horn antenna and dielectric lens, a Schottky diode mixer circuit, and an intermediate frequency (IF) low noise amplifier circuit were integrated in the same metallic split block housing. This resulted in a receiver mean double sideband (DSB) noise temperature of 3300 K (minimum 2770 K, maximum 3400 K), achieved at an operation temperature of 40 °C and across a 10 GHz wide IF band. A minimum DSB noise temperature of 2260 K at 20 °C was measured without the lens. Three different dielectric lens materials were tested and compared with respect to the radiation pattern and noise temperature. All three lenses were compliant in terms of radiation pattern, but one of the materials led to a reduction in noise temperature of approximately 200 K compared to the others. The loss in this lens was estimated to be 0.42 dB. The local oscillator chains have a power consumption of 24 W and consist of custom-designed Schottky diode quadruplers (5% power efficiency in operation, 8%-9% peak), commercial heterostructure barrier varactor (HBV) triplers, and power amplifiers that are pumped by using a common dielectric resonator oscillator at 36.43 GHz. Measurements of the radiation pattern showed a symmetric main beam lobe with full width half maximum <5° and side lobe levels below -20 dB. Return loss of a prototype of the spline horn and lens was measured using a network analyzer and frequency extenders to 750-1100 GHz. Time-domain analysis of the reflection coefficients shows that the reflections are below -25 dB and are dominated by the external waveguide interface.

  8. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    Science.gov (United States)

    Wei, Mao; Wei-Bo, She; Cui, Yang; Jin-Feng, Zhang; Xue-Feng, Zheng; Chong, Wang; Yue, Hao

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085, 61334002, 61306017, 61474091, 61574112, and 61574110).

  9. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Hao Yue; Yang Cui

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. (paper)

  10. 11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an

  11. Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

    Science.gov (United States)

    Orouji, Ali A.; Ghaffari, Majid

    2015-11-01

    In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

  12. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    International Nuclear Information System (INIS)

    Witte, H; Warnke, C; Krost, A; Voigt, T; De Lima, A; Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K

    2011-01-01

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO x isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  13. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    Energy Technology Data Exchange (ETDEWEB)

    Witte, H; Warnke, C; Krost, A [Institute of Experimental Physics, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Voigt, T; De Lima, A [Institute for Physiology, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K, E-mail: hartmut.witte@physik.uni-magdeburg.de [Process Systems Engineering, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany)

    2011-09-07

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO{sub x} isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  14. Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

    Science.gov (United States)

    Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro

    2017-06-01

    Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.

  15. An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Cao Meng-Yi; Lu Yang; Chen Yong-He; Zheng Jia-Xin; Ma Xiao-Hua; Hao Yue; Wei Jia-Xing; Li Wei-Jun

    2014-01-01

    In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Input Stage for Low-Voltage, Low-Noise Preamplifiers Based on a Floating-Gate MOS Transistor

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe degradat......A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe...... degradation of the performance of the circuit and without the need for a repeating programming. In this way the noise originating from any resistance previously used for the definition of the operating point is avoided completely and, moreover, by avoiding the input high-pass filter both the saturation...

  17. High reliability - low noise radionuclide signature identification algorithms for border security applications

    Science.gov (United States)

    Lee, Sangkyu

    Illicit trafficking and smuggling of radioactive materials and special nuclear materials (SNM) are considered as one of the most important recent global nuclear threats. Monitoring the transport and safety of radioisotopes and SNM are challenging due to their weak signals and easy shielding. Great efforts worldwide are focused at developing and improving the detection technologies and algorithms, for accurate and reliable detection of radioisotopes of interest in thus better securing the borders against nuclear threats. In general, radiation portal monitors enable detection of gamma and neutron emitting radioisotopes. Passive or active interrogation techniques, present and/or under the development, are all aimed at increasing accuracy, reliability, and in shortening the time of interrogation as well as the cost of the equipment. Equally important efforts are aimed at advancing algorithms to process the imaging data in an efficient manner providing reliable "readings" of the interiors of the examined volumes of various sizes, ranging from cargos to suitcases. The main objective of this thesis is to develop two synergistic algorithms with the goal to provide highly reliable - low noise identification of radioisotope signatures. These algorithms combine analysis of passive radioactive detection technique with active interrogation imaging techniques such as gamma radiography or muon tomography. One algorithm consists of gamma spectroscopy and cosmic muon tomography, and the other algorithm is based on gamma spectroscopy and gamma radiography. The purpose of fusing two detection methodologies per algorithm is to find both heavy-Z radioisotopes and shielding materials, since radionuclides can be identified with gamma spectroscopy, and shielding materials can be detected using muon tomography or gamma radiography. These combined algorithms are created and analyzed based on numerically generated images of various cargo sizes and materials. In summary, the three detection

  18. Integrated low noise low power interface for neural bio-potentials recording and conditioning

    Science.gov (United States)

    Bottino, Emanuele; Martinoia, Sergio; Valle, Maurizio

    2005-06-01

    The recent progress in both neurobiology and microelectronics suggests the creation of new, powerful tools to investigate the basic mechanisms of brain functionality. In particular, a lot of efforts are spent by scientific community to define new frameworks devoted to the analysis of in-vitro cultured neurons. One possible approach is recording their spiking activity to monitor the coordinated cellular behaviour and get insights about neural plasticity. Due to the nature of neurons action-potentials, when considering the design of an integrated microelectronic-based recording system, a number of problems arise. First, one would desire to have a high number of recording sites (i.e. several hundreds): this poses constraints on silicon area and power consumption. In this regard, our aim is to integrate-through on-chip post-processing techniques-hundreds of bio-compatible microsensors together with CMOS standard-process low-power (i.e. some tenths of uW per channel) conditioning electronics. Each recording channel is provided with sampling electronics to insure synchronous recording so that, for example, cross-correlation between signals coming from different sites can be performed. Extra-cellular potentials are in the range of [50-150] uV, so a comparison in terms of noise-efficiency was carried out among different architectures and very low-noise pre-amplification electronics (i.e. less than 5 uVrms) was designed. As spikes measurements are made with respect to the voltage of a reference electrode, we opted for an AC-coupled differential-input preamplifier provided with band-pass filtering capability. To achieve this, we implemented large time-constant (up to seconds) integrated components in the preamp feedback path. Thus, we got rid also of random slow-drifting DC-offsets and common mode signals. The paper will present our achievements in the design and implementation of a fully integrated bio-abio interface to record neural spiking activity. In particular

  19. Algan/Gan Hemt By Magnetron Sputtering System

    Science.gov (United States)

    Garcia Perez, Roman

    In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

  20. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  1. Performance Assessment of Low-Noise Road Surfaces in the Leopoldo Project: Comparison and Validation of Different Measurement Methods

    Directory of Open Access Journals (Sweden)

    Gaetano Licitra

    2015-01-01

    Full Text Available In almost all urban contexts and in many extra-urban conurbations, where road traffic is the main noise pollution source, the use of barriers is not allowed. In these cases, low-noise road surfaces are the most used mitigation action together with traffic flow reduction. Selecting the optimal surface is only the first problem that the public administration has to face. In the second place, it has to consider the issue of assessing the efficacy of the mitigation action. The purpose of the LEOPOLDO project was to improve the knowledge in the design and the characterization of low-noise road surfaces, producing guidelines helpful to the public administrations. Several experimental road surfaces were tested. Moreover, several measurement methods were implemented aiming to select those that are suitable for a correct assessment of the pavement performances laid as mitigation planning. In this paper, the experience gained in the LEOPOLDO project will be described, focusing on both the measurement methods adopted to assess the performance of a low-noise road surface and the criteria by which the experimental results have to be evaluated, presenting a comparison of the obtained results and their monitoring along time.

  2. Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors

    Directory of Open Access Journals (Sweden)

    Shoji Kawahito

    2016-11-01

    Full Text Available This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs. This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC. The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median: 0.29 e−rms when compared with the CMS gain of two (2.4 e−rms, or 16 (1.1 e−rms.

  3. A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

    Science.gov (United States)

    Wilkinson, David T.; Page, Lyman

    1995-01-01

    The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

  4. 60Co gamma radiation effect on AlGaN//AlN/GaN HEMT devices

    International Nuclear Information System (INIS)

    Wang Yanping; Luo Yinhong; Wang Wei; Zhang Keying; Guo Hongxia; Guo Xiaoqiang; Wang Yuanming

    2013-01-01

    The testing techniques and experimental methods of the 60 Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained. (authors)

  5. Low noise cryogenic receiver for spectroscopic applications in mm-wave radioastronomy at 230 GHz

    International Nuclear Information System (INIS)

    Pagani, L.; Ruffie, G.; Beaudin, G.; Gheudin, M.; Deschamps, A.

    1986-01-01

    A new cooled mm-wave receiver is presented. This receiver has been in operation since October 1985 with a 2.5 m Cassegrain telescope located at the Plateau de Bure in the French Alps. It is tunable from 210 to 240 GHz and has a DSB system noise temperature of 360 K and a 600 MHz instantaneous bandwidth. The receiver is composed of a local oscillator (klystron frequency tripler) and a Schottky diode mixer with a cooled FET amplifier. Quasi-optical techniques are used for signal injection. A computer-controlled microprocessor drives the whole system and performs calibration and frequency tuning of the receiver. The different parts of the receiver, frequency tripler, quasi-optical techniques, mixer, FET amplifier, and microprocessor, are described. 13 references

  6. Cooling techniques

    International Nuclear Information System (INIS)

    Moeller, S.P.

    1994-01-01

    After an introduction to the general concepts of cooling of charged particle beams, some specific cooling methods are discussed, namely stochastic, electron and laser cooling. The treatment concentrates on the physical ideas of the cooling methods and only very crude derivations of cooling times are given. At the end three other proposed cooling schemes are briefly discussed. (orig.)

  7. The sensitivity research of multiparameter biosensors based on HEMT by the mathematic modeling method

    Science.gov (United States)

    Tikhomirov, V. G.; Gudkov, A. G.; Agasieva, S. V.; Gorlacheva, E. N.; Shashurin, V. D.; Zybin, A. A.; Evseenkov, A. S.; Parnes, Y. M.

    2017-11-01

    The numerical impact modeling of some external effects on the CVC of biosensors based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure surface in the gate region and to start the process of directed construction optimization of the biosensors based on AlGaN/GaN HEMT with the aim of improving their performance. The calculation of the drain current of the biosensor construction was carried out to confirm the reliability of the developed mathematical model and obtained results.

  8. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  9. Low Noise Frequency Comb Sources Based on Synchronously Pumped Doubly Resonant Optical Parametric Oscillators

    Science.gov (United States)

    Wan, Chenchen

    Optical frequency combs are coherent light sources consist of thousands of equally spaced frequency lines. Frequency combs have achieved success in applications of metrology, spectroscopy and precise pulse manipulation and control. The most common way to generate frequency combs is based on mode-locked lasers which has the output spectrum of comb structures. To generate stable frequency combs, the output from mode-locked lasers need to be phase stabilized. The whole comb lines will be stabilized if the pulse train repetition rate corresponding to comb spacing and the pulse carrier envelope offset (CEO) frequency are both stabilized. The output from a laser always has fluctuations in parameters known as noise. In laser applications, noise is an important factor to limit the performance and often need to be well controlled. For example in precision measurement such as frequency metrology and precise spectroscopy, low laser intensity and phase noise is required. In mode-locked lasers there are different types of noise like intensity noise, pulse temporal position noise also known as timing jitter, optical phase noise. In term for frequency combs, these noise dynamics is more complex and often related. Understanding the noise behavior is not only of great interest in practical applications but also help understand fundamental laser physics. In this dissertation, the noise of frequency combs and mode-locked lasers will be studied in two projects. First, the CEO frequency phase noise of a synchronously pumped doubly resonant optical parametric oscillators (OPO) will be explored. This is very important for applications of the OPO as a coherent frequency comb source. Another project will focus on the intensity noise coupling in a soliton fiber oscillator, the finding of different noise coupling in soliton pulses and the dispersive waves generated from soliton perturbation can provide very practical guidance for low noise soliton laser design. OPOs are used to generate

  10. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    Energy Technology Data Exchange (ETDEWEB)

    Gurpinar, Emre [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Group; Iannuzzo, Francesco [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Yang, Yongheng [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Castellazzi, Alberto [Univ. of Nottingham (United Kingdom). Power Electronics, Machines and Control (PEMC); Blaabjerg, Frede [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology

    2017-11-23

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  11. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  12. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

  13. Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2006-01-01

    In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance simul...

  14. A gate current 1/f noise model for GaN/AlGaN HEMTs

    International Nuclear Information System (INIS)

    Liu Yu'an; Zhuang Yiqi

    2014-01-01

    This work presents a theoretical and experimental study on the gate current 1/f noise in AlGaN/GaN HEMTs. Based on the carrier number fluctuation in the two-dimensional electron gas channel of AlGaN/GaN HEMTs, a gate current 1/f noise model containing a trap-assisted tunneling current and a space charge limited current is built. The simulation results are in good agreement with the experiment. Experiments show that, if V g < V x (critical gate voltage of dielectric relaxation), gate current 1/f noise comes from the superimposition of trap-assisted tunneling RTS (random telegraph noise), while V g > V x , gate current 1/f noise comes from not only the trap-assisted tunneling RTS, but also the space charge limited current RTS. This indicates that the gate current 1/f noise of the GaN-based HEMTs device is sensitive to the interaction of defects and the piezoelectric relaxation. It provides a useful characterization tool for deeper information about the defects and their evolution in AlGaN/GaN HEMTs. (semiconductor devices)

  15. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  16. Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

    International Nuclear Information System (INIS)

    Cheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E.Y.

    2013-01-01

    This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. -- Highlights: ► An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ► The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ► The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ► This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si

  17. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    International Nuclear Information System (INIS)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng; Castellazzi, Alberto; Blaabjerg, Frede

    2017-01-01

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  18. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

    Science.gov (United States)

    Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

    2015-10-01

    Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

  19. GaN growth on sapphire by MOCVD - Material for HEMT structures

    NARCIS (Netherlands)

    Grzegorczyk, A.P.

    2006-01-01

    This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed.

  20. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  1. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  2. A hybrid, broadband, low noise charge preamplifier for simultaneous high resolution energy and time information with large capacitance semiconductor detector

    International Nuclear Information System (INIS)

    Goyot, M.

    1975-05-01

    A broadband and low noise charge preamplifier was developed in hybrid form, for a recoil spectrometer requiring large capacitance semiconductor detectors. This new hybrid and low cost preamplifier permits good timing information without compromising energy resolution. With a 500 pF external input capacity, it provides two simultaneous outputs: (i) the faster, current sensitive, with a rise time of 9 nsec and 2 mV/MeV on 50 ohms load, (ii) the lower, charge sensitive, with an energy resolution of 14 keV (FWHM Si) using a RC-CR ungated filter of 2 μsec and a FET input protection [fr

  3. Simple, low-noise piezo driver with feed-forward for broad tuning of external cavity diode lasers.

    Science.gov (United States)

    Doret, S Charles

    2018-02-01

    We present an inexpensive, low-noise (piezo driver suitable for frequency tuning of external-cavity diode lasers. This simple driver improves upon many commercially available drivers by incorporating circuitry to produce a "feed-forward" signal appropriate for making simultaneous adjustments to the piezo voltage and laser current, enabling dramatic improvements in a mode-hop-free laser frequency tuning range. We present the theory behind our driver's operation, characterize its output noise, and demonstrate its use in absorption spectroscopy on the rubidium D 1 line.

  4. Ultra-Low Noise Vertical Takeoff and Landing, or Development of an Uber Self-Flying, Helipad-Capable, Quiet V-ESTOL Personal Transporter Integrated Flight Demonstrator

    Data.gov (United States)

    National Aeronautics and Space Administration — Several aspects of this research are completely unique compared to prior attempts to achieve low noise vertical lift solutions, and are an artifact of the incredible...

  5. Novel active signal compression in low-noise analog readout at future X-ray FEL facilities

    Science.gov (United States)

    Manghisoni, M.; Comotti, D.; Gaioni, L.; Lodola, L.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.

    2015-04-01

    This work presents the design of a low-noise front-end implementing a novel active signal compression technique. This feature can be exploited in the design of analog readout channels for application to the next generation free electron laser (FEL) experiments. The readout architecture includes the low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time variant shaper used to process the signal at the preamplifier output and a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC). The channel will be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future XFEL machines. The choice of a 65 nm CMOS technology has been made in order to include all the building blocks in the target pixel pitch of 100 μm. This work has been carried out in the frame of the PixFEL Project funded by the Istituto Nazionale di Fisica Nucleare (INFN), Italy.

  6. A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

    Directory of Open Access Journals (Sweden)

    Cheng-Chun Wu

    2016-10-01

    Full Text Available An electronic nose (E-Nose is one of the applications for surface acoustic wave (SAW sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS readout application-specific integrated circuit (ASIC based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

  7. A 55 nm CMOS ΔΣ fractional-N frequency synthesizer for WLAN transceivers with low noise filters

    International Nuclear Information System (INIS)

    Chen Mingyi; Chu Xiaojie; Yu Peng; Yan Jun; Shi Yin

    2013-01-01

    A fully integrated ΔΣ fractional-N frequency synthesizer fabricated in a 55 nm CMOS technology is presented for the application of IEEE 802.11b/g wireless local area network (WLAN) transceivers. A low noise filter, occupying a small die area, whose power supply is given by a high PSRR and low noise LDO regulator, is integrated on chip. The proposed synthesizer needs no off-chip components and occupies an area of 0.72 mm 2 excluding PAD. Measurement results show that in all channels, the phase noise of the synthesizer achieves −99 dBc/Hz and −119 dBc/Hz in band and out of band respectively with a reference frequency of 40 MHz and a loop bandwidth of 200 kHz. The integrated RMS phase error is no more than 0.6°. The proposed synthesizer consumes a total power of 15.6 mW. (semiconductor integrated circuits)

  8. A low noise 665 GHz SIS quasi-particle waveguide receiver

    Science.gov (United States)

    Kooi, J. W.; Walker, C. K.; Leduc, H. G.; Hunter, T. R.; Benford, D. J.; Phillips, T. G.

    1993-01-01

    Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.

  9. Ultra-Low Noise Germanium Neutrino Detection system (ULGeN).

    Energy Technology Data Exchange (ETDEWEB)

    Cabrera-Palmer, Belkis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Barton, Paul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2017-07-01

    Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.

  10. Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

    Science.gov (United States)

    McGrath, W. R.

    1995-01-01

    Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

  11. Ultra-Low Noise Germanium Neutrino Detection system (ULGeN)

    International Nuclear Information System (INIS)

    Cabrera-Palmer, Belkis; Barton, Paul

    2017-01-01

    Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.

  12. Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco

    2016-01-01

    contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours......In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main...

  13. Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

    Science.gov (United States)

    Nirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.

    2018-01-01

    In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain current model is derived. This model is useful to correlate the impact of intrinsic capacitance and conductance on drain current collapse. The proposed device suppressed the current collapse phenomena by 10% compared with the conventional AlGaN/GaN HEMT. Moreover, the DC characteristics of the simulated device shows a drain current of 900 mA/mm, breakdown voltage of 291 V and transconductance of 175 mS/mm. Besides, the intrinsic capacitance and conductance parameters are extracted and its impact on drain current is analysed. Finally, the simulation results obtained were in compliance with the derived mathematical model of AlGaN/GaN HEMT.

  14. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

    2009-06-15

    In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2015-01-01

    Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

  16. Low noise monolithic Si JFETs for operation in the 90-300K Range and in high radiation environments

    International Nuclear Information System (INIS)

    Radeka, V.; Citterio, M.; Rescia, S.; Manfredi, P.F.; Speziali, V.

    1994-12-01

    Development of low noise preamplifters for large ionization chambers with liquid argon (LAr) and liquid krypton (LKr) used in high energy physics experiments for measurement of energy of charged particles and photons requires die choice of a technology able to withstand the environment: a temperature of 90 K -120 K; an ionizing radiation dose of 1-2 Mrad; a neutron fluence of 0.5 -1.10 14 n/cm 2 . Silicon JFETs by virtue of their reliable noise behavior and their intrinsic radiation hardness appear to be very suitable devices for applications both at room and cryogenic temperatures. We describe the noise properties of JFET devices and a monolithic preamplifier suitable for amplification of charge and current signals

  17. A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

    Science.gov (United States)

    Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

    2016-01-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  18. Hybrid and electric low-noise cars cause an increase in traffic accidents involving vulnerable road users in urban areas.

    Science.gov (United States)

    Brand, Stephan; Petri, Maximilian; Haas, Philipp; Krettek, Christian; Haasper, Carl

    2013-01-01

    Due to resource scarcity, the number of low-noise and electric cars is expected to increase rapidly. The frequent use of these cars will lead to a significant reduction of traffic related noise and pollution. On the other hand, due to the adaption and conditioning of vulnerable road users the number of traffic accidents involving pedestrians and bicyclists is postulated to increase as well. Children, older people with reduced eyesight and the blind are especially reliant on a combination of acoustic and visual warning signals with approaching or accelerating vehicles. This is even more evident in urban areas where the engine sound is the dominating sound up to 30 kph (kilometres per hour). Above this, tyre-road interaction is the main cause of traffic noise. With the missing typical engine sound a new sound design is necessary to prevent traffic accidents in urban areas. Drivers should not be able to switch the sound generator off.

  19. Design of a 1 _s real-time low-noise data acquisition for power converters control loop

    CERN Document Server

    AUTHOR|(SzGeCERN)712364; Arpaia, Pasquale; Cerqueira Bastos, Miguel; Martino, Michele

    2015-01-01

    The proof of principle of a real-time data acquisition system to be integrated into a digital control loop for controlling the power converters of the Compact LInear Collider is presented. The system is based on an ultra low noise analogue front-end with 1:1 ppm RMS noise (referred to input), and about 1 _s of real-time delay. After the analogue conditioning, a fully-differential analogue-todigital converter is foreseen. The requirements of this system, directly derived from the accelerator performance, are discussed and translated into design specification. The results obtained by means of Pspice simulations are reported in order to prove that the design is feasible with the proposed architecture. Finally, the results of the experimental validation of the prototype, currently under design, will be included in the final paper.

  20. Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

    Science.gov (United States)

    Ichino, Shinya; Mawaki, Takezo; Teramoto, Akinobu; Kuroda, Rihito; Park, Hyeonwoo; Wakashima, Shunichi; Goto, Tetsuya; Suwa, Tomoyuki; Sugawa, Shigetoshi

    2018-04-01

    Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

  1. High dynamic range low-noise focal plane readout for VLWIR applications implemented with current mode background subtraction

    Science.gov (United States)

    Yang, Guang; Sun, Chao; Shaw, Timothy; Wrigley, Chris; Peddada, Pavani; Blazejewski, Edward R.; Pain, Bedabrata

    1998-09-01

    Design and operation of a low noise CMOS focal pa;ne readout circuit with ultra-high charge handling capacity is presented. Designed for high-background, VLWIR detector readout, each readout unit cell use an accurate dynamic current memory for automatic subtraction of the dark pedestal in current domain enabling measurement of small signals 85 dB below the dark level. The redout circuit operates with low-power dissipation, high linearity, and is capable of handling pedestal currents up to 300 nA. Measurements indicate an effective charge handling capacity of over 5 X 10(superscript 9) charges/pixel with less than 10(superscript 5) electrons of input referred noise.

  2. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    Energy Technology Data Exchange (ETDEWEB)

    Kahle, Duncan [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States); Aslam, Shahid, E-mail: shahid.aslam-1@nasa.gov [NASA, Goddard Space Flight Center, Planetary Systems Laboratory, Greenbelt, MD 20771 (United States); Herrero, Federico A.; Waczynski, Augustyn [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States)

    2016-09-11

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  3. A rapid and low noise switch from RANS to WMLES on curvilinear grids with compressible flow solvers

    Science.gov (United States)

    Deck, Sébastien; Weiss, Pierre-Elie; Renard, Nicolas

    2018-06-01

    A turbulent inflow for a rapid and low noise switch from RANS to Wall-Modelled LES on curvilinear grids with compressible flow solvers is presented. It can be embedded within the computational domain in practical applications with WMLES grids around three-dimensional geometries in a flexible zonal hybrid RANS/LES modelling context. It relies on a physics-motivated combination of Zonal Detached Eddy Simulation (ZDES) as the WMLES technique together with a Dynamic Forcing method processing the fluctuations caused by a Zonal Immersed Boundary Condition describing roughness elements. The performance in generating a physically-sound turbulent flow field with the proper mean skin friction and turbulent profiles after a short relaxation length is equivalent to more common inflow methods thanks to the generation of large-scale streamwise vorticity by the roughness elements. Comparisons in a low Mach-number zero-pressure-gradient flat-plate turbulent boundary layer up to Reθ = 6 100 reveal that the pressure field is dominated by the spurious noise caused by the synthetic turbulence methods (Synthetic Eddy Method and White Noise injection), contrary to the new low-noise approach which may be used to obtain the low-frequency component of wall pressure and reproduce its intermittent nature. The robustness of the method is tested in the flow around a three-element airfoil with WMLES in the upper boundary layer near the trailing edge of the main element. In spite of the very short relaxation distance allowed, self-sustainable resolved turbulence is generated in the outer layer with significantly less spurious noise than with the approach involving White Noise. The ZDES grid count for this latter test case is more than two orders of magnitude lower than the Wall-Resolved LES requirement and a unique mesh is involved, which is much simpler than some multiple-mesh strategies devised for WMLES or turbulent inflow.

  4. Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

    Science.gov (United States)

    Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

    2018-04-01

    We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN ( 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

  5. Noise performance in AlGaN/GaN HEMTs under high drain bias

    International Nuclear Information System (INIS)

    Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

    2009-01-01

    The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

  6. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

    International Nuclear Information System (INIS)

    Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

    2014-01-01

    The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

  7. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

    Science.gov (United States)

    Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

    2017-07-25

    Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

  8. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  9. Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Kaushik, J K; Balakrishnan, V R; Muralidharan, R; Panwar, B S

    2013-01-01

    The experimentally observed inverse temperature dependence of the reverse gate leakage current in AlGaN/GaN HEMT is explained using a virtual gate trap-assisted tunneling model. The virtual gate is formed due to the capture of electrons by surface states in the vicinity of actual gate. The increase and decrease in the length of the virtual gate with temperature due to trap kinetics are used to explain this unusual effect. The simulation results have been validated experimentally. (paper)

  10. Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

    OpenAIRE

    Matiss, A.; Janssen, G.; Bertenburg, R. M.; Brockerhoff, W.; Tegude, F.J.

    2004-01-01

    To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect...

  11. Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

    Science.gov (United States)

    Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd; hide

    2010-01-01

    In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

  12. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  13. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Koo, Sang-Mo; Kang, Min-Seok

    2014-01-01

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

  14. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  15. New AlGaN/GaN HEMTs employing both a floating gate and a field plate

    International Nuclear Information System (INIS)

    Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

    2010-01-01

    We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

  16. A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

    Science.gov (United States)

    Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

    2017-11-01

    In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

  17. Multichannel monolithic front-end system design. Part II. Microwave bipolar-JFET process for low-noise charge-sensitive preamplifiers

    International Nuclear Information System (INIS)

    Baturitsky, M.A.; Reutovich, S.I.; Solomashenko, N.F.

    1996-01-01

    For pt. I see ibid., vol.378, p.564-569, 1996. New monolithic low-noise process has been developed for simultaneous fabrication of high-speed low-noise 4-terminal and 3-terminal pJFETs and microwave low-noise npn BJTs. A new ion-implanted 4-terminal structure of JFET having 300 MHz cut-off frequency is designed. The process provides direct contact to a top gate and independent access to the top and bottom gates. Application of p-channel implant makes it possible to optimize the JFET pinch-off voltage without deterioration of bipolar transistor characteristics: f T ≥3 GHz, current gain β≥150, R bb' ≤15-40 Ω. (orig.)

  18. Cooling Performance of ALIP according to the Air or Sodium Cooling Type

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Huee-Youl; Yoon, Jung; Lee, Tae-Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    ALIP pumps the liquid sodium by Lorentz force produced by the interaction of induced current in the liquid metal and their associated magnetic field. Even though the efficiency of the ALIP is very low compared to conventional mechanical pumps, it is very useful due to the absence of moving parts, low noise and vibration level, simplicity of flow rate regulation and maintenance, and high temperature operation capability. Problems in utilization of ALIP concern a countermeasure for elevation of internal temperature of the coil due to joule heating and how to increase magnetic flux density of Na channel gap. The conventional ALIP usually used cooling methods by circulating the air or water. On the other hand, GE-Toshiba developed a double stator pump adopting the sodium-immersed self-cooled type, and it recovered the heat loss in sodium. Therefore, the station load factor of the plant could be reduced. In this study, the cooling performance with cooling types of ALIP is analyzed. We developed thermal analysis models to evaluate the cooling performance of air or sodium cooling type of ALIP. The cooling performance is analyzed for operating parameters and evaluated with cooling type. 1-D and 3-D thermal analysis model for IHTS ALIP was developed, and the cooling performance was analyzed for air or sodium cooling type. The cooling performance for air cooling type was better than sodium cooling type at higher air velocity than 0.2 m/s. Also, the air temperature of below 270 .deg. demonstrated the better cooling performance as compared to sodium.

  19. Cooling towers

    International Nuclear Information System (INIS)

    Boernke, F.

    1975-01-01

    The need for the use of cooling systems in power plant engineering is dealt with from the point of view of a non-polluting form of energy production. The various cooling system concepts up to the modern natural-draught cooling towers are illustrated by examples. (TK/AK) [de

  20. Liquid helium-cooled MOSFET preamplifier for use with astronomical bolometer

    Science.gov (United States)

    Goebel, J. H.

    1977-01-01

    A liquid helium-cooled p-channel enhancement mode MOSFET, the 3N167, is found to have sufficiently low noise for use as a preamplifier with helium-cooled bolometers that are used in infrared astronomy. Its characteristics at 300, 77, and 4.2 K are presented. It is also shown to have useful application with certain photoconductive and photovoltaic infrared detectors.

  1. A dual-mode driver IC with monolithic negative drive-voltage capability and digital current-mode controller for depletion-mode GaN HEMT

    NARCIS (Netherlands)

    Wen, Y.; Rose, M.; Fernandes, R.; van Otten, R.; Bergveld, H.J.; Trescases, O.

    2017-01-01

    This work presents a driver and controller integrated circuit (IC) for depletion-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The dual-mode driver can be configured for cascode-drive (CD) or HEMT-drive (HD) mode. In the CD mode, a cascode low-voltage DMOS is driven to

  2. Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco

    2016-01-01

    In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibil......In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different...... be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide...

  3. Low noise SQUIDs

    Science.gov (United States)

    de Waal, V. J.

    1983-02-01

    The present investigation deals with the design, fabrication, and limitations of very sensitive SQUID (Superconducting Quantum Interference Device) magnetometers. The SQUID magnetometer is based on a utilization of the Josephson effect. A description of the theoretical background is provided, and high performance DC SQUIDs with submicron niobium Josephson junctions are discussed, taking into account design considerations, fabrication, junction characterization, the performance of the SQUID and input coil, and the gradiometer performance. The simulation and optimization of a DC SQUID with finite capacitance is considered, giving attention to the implementation of a simulation procedure on a hybrid computer.

  4. Low noise SQUIDs

    Energy Technology Data Exchange (ETDEWEB)

    De Waal, V.J.

    1983-01-01

    The present investigation deals with the design, fabrication, and limitations of very sensitive SQUID (Superconducting Quantum Interference Device) magnetometers. The SQUID magnetometer is based on a utilization of the Josephson effect. A description of the theoretical background is provided, and high performance DC SQUIDs with submicron niobium Josephson junctions are discussed, taking into account design considerations, fabrication, junction characterization, the performance of the SQUID and input coil, and the gradiometer performance. The simulation and optimization of a DC SQUID with finite capacitance is considered, giving attention to the implementation of a simulation procedure on a hybrid computer. 129 references.

  5. Low noise control valve

    International Nuclear Information System (INIS)

    Christie, R.S.

    1975-01-01

    Noise is one of the problems associated with the use of any type of control valve in systems involving the flow of fluids. The advent of OSHA standards has prompted control valve manufacturers to design valves with special trim to lower the sound pressure level to meet these standards. However, these levels are in some cases too high, particularly when a valve must be located in or near an area where people are working at tasks requiring a high degree of concentration. Such locations are found around and near research devices and in laboratory-office areas. This paper describes a type of fluid control device presently being used at PPL as a bypass control valve in deionized water systems and designed to reduce sound pressure levels considerably below OSHA standards. Details of the design and construction of this constant pressure drop variable flow control valve are contained in the text and are shown in photographs and drawings. Test data taken are included

  6. A Baseband Ultra-Low Noise SiGe:C BiCMOS 0.25 µm Amplifier And Its Application For An On-Chip Phase-Noise Measurement Circuit

    OpenAIRE

    Godet , Sylvain; Tournier , Éric; Llopis , Olivier; Cathelin , Andreia; Juyon , Julien

    2009-01-01

    4 pages; International audience; The design and realization of an ultra-low noise operational amplifier is presented. Its applications are integrated low-frequency noise measurements in electronic devices and on-chip phase-noise measurement circuit. This paper discusses the SiGe:C BiCMOS 0.25 µm design improvements used for low noise applications. The proposed three-stage operational amplifier uses parallel bipolar transistor connection as input differential pair for low noise behavior. This ...

  7. Design of low noise front-end ASIC and DAQ system for CdZnTe detector

    International Nuclear Information System (INIS)

    Luo Jie; Deng Zhi; Liu Yinong

    2012-01-01

    A low noise front-end ASIC has been designed for CdZnTe detector. This chip contains 16 channels and each channel consists of a dual-stage charge sensitive preamplifier, 4th order semi-Gaussian shaper, leakage current compensation (LCC) circuit, discriminator and output buffer. This chip has been fabricated in Chartered 0.35 μm CMOS process, the preliminary results show that it works well. The total channel charge gain can be adjusted from 100 mV/fC to 400 mV/fC and the peaking time can be adjusted from 1 μs to 4 μs. The minimum measured ENC at zero input capacitance is 70 e and minimum noise slope is 20 e/pF. The peak detector and derandomizer (PDD) ASIC developed by BNL and an associated USB DAQ board are also introduced in this paper. Two front-end ASICs can be connected to the PDD ASIC on the USB DAQ board and compose a 32 channels DAQ system for CdZnTe detector. (authors)

  8. Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

    Science.gov (United States)

    Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

    2016-01-01

    We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

  9. A GEM-TPC prototype with low-Noise highly integrated front-end electronics for linear collider studies

    CERN Document Server

    Kappler, Steffen; Kaminski, Jochen; Ledermann, Bernhard; Müller, Thomas; Ronan, Michael T; Ropelewski, Leszek; Sauli, Fabio; Settles, Ronald

    2004-01-01

    Connected to the linear collider project, studies on the readout of time projection chambers (TPCs) based on the gas electron multiplier (GEM) are ongoing. Higher granularity and intrinsically suppressed ion feedback are the major advantages of this technology. After a short discussion of these issues, we present the design of a small and very flexible TPC prototype, whose cylindrical drift volume can be equipped with endcaps of different gas detector types. An endcap with multi-GEM readout is currently set up and successfully operated with a low-noise highly integrated front-end electronics. We discuss results of measurements with this system in high intensity particle beams at CERN, where 99.3 plus or minus 0.2% single-pad-row efficiency could be achieved at an effective gain of 2.5 multiplied by 10**3 only, and spatial resolutions down to 63 plus or minus 3 mum could be demonstrated. Finally, these results are extrapolated to the high magnetic field in a linear collider TPC. 5 Refs.

  10. A high-efficiency, low-noise power solution for a dual-channel GNSS RF receiver

    International Nuclear Information System (INIS)

    Shi Jian; Mo Taishan; Gan Yebing; Ma Chengyan; Ye Tianchun; Le Jianlian

    2012-01-01

    A high-efficiency low-noise power solution for a dual-channel GNSS RF receiver is presented. The power solution involves a DC—DC buck converter and a followed low-dropout regulator (LDO). The pulse-width-modulation (PWM) control method is adopted for better noise performance. An improved low-power high-frequency PWM control circuit is proposed, which halves the average quiescent current of the buck converter to 80 μA by periodically shutting down the OTA. The size of the output stage has also been optimized to achieve high efficiency under a light load condition. In addition, a novel soft-start circuit based on a current limiter has been implemented to avoid inrush current. Fabricated with commercial 180-nm CMOS technology, the DC—DC converter achieves a peak efficiency of 93.1% under a 2 MHz working frequency. The whole receiver consumes only 20.2 mA from a 3.3 V power supply and has a noise figure of 2.5 dB. (semiconductor integrated circuits)

  11. An eight channel low-noise CMOS readout circuit for silicon detectors with on-chip front-end FET

    International Nuclear Information System (INIS)

    Fiorini, C.; Porro, M.

    2006-01-01

    We propose a CMOS readout circuit for the processing of signals from multi-channel silicon detectors to be used in X-ray spectroscopy and γ-ray imaging applications. The circuit is composed by eight channels, each one featuring a low-noise preamplifier, a 6th-order semigaussian shaping amplifier with four selectable peaking times, from 1.8 up to 6 μs, a peak stretcher and a discriminator. The circuit is conceived to be used with silicon detectors with a front-end FET integrated on the detector chips itself, like silicon drift detectors with JFET and pixel detectors with DEPMOS. The integrated time constants used for the shaping are implemented by means of an RC-cell, based on the technique of demagnification of the current flowing in a resistor R by means of the use of current mirrors. The eight analog channels of the chip are multiplexed to a single analog output. A suitable digital section provides self-resetting of each channel and trigger output and is able to set independent thresholds on the analog channels by means of a programmable serial register and 3-bit DACs. The circuit has been realized in the 0.35 μm CMOS AMS technology. In this work, the main features of the circuit are presented along with the experimental results of its characterization

  12. A Two-Step A/D Conversion and Column Self-Calibration Technique for Low Noise CMOS Image Sensors

    Directory of Open Access Journals (Sweden)

    Jaeyoung Bae

    2014-07-01

    Full Text Available In this paper, a 120 frames per second (fps low noise CMOS Image Sensor (CIS based on a Two-Step Single Slope ADC (TS SS ADC and column self-calibration technique is proposed. The TS SS ADC is suitable for high speed video systems because its conversion speed is much faster (by more than 10 times than that of the Single Slope ADC (SS ADC. However, there exist some mismatching errors between the coarse block and the fine block due to the 2-step operation of the TS SS ADC. In general, this makes it difficult to implement the TS SS ADC beyond a 10-bit resolution. In order to improve such errors, a new 4-input comparator is discussed and a high resolution TS SS ADC is proposed. Further, a feedback circuit that enables column self-calibration to reduce the Fixed Pattern Noise (FPN is also described. The proposed chip has been fabricated with 0.13 μm Samsung CIS technology and the chip satisfies the VGA resolution. The pixel is based on the 4-TR Active Pixel Sensor (APS. The high frame rate of 120 fps is achieved at the VGA resolution. The measured FPN is 0.38 LSB, and measured dynamic range is about 64.6 dB.

  13. A Fast Multiple Sampling Method for Low-Noise CMOS Image Sensors With Column-Parallel 12-bit SAR ADCs

    Directory of Open Access Journals (Sweden)

    Min-Kyu Kim

    2015-12-01

    Full Text Available This paper presents a fast multiple sampling method for low-noise CMOS image sensor (CIS applications with column-parallel successive approximation register analog-to-digital converters (SAR ADCs. The 12-bit SAR ADC using the proposed multiple sampling method decreases the A/D conversion time by repeatedly converting a pixel output to 4-bit after the first 12-bit A/D conversion, reducing noise of the CIS by one over the square root of the number of samplings. The area of the 12-bit SAR ADC is reduced by using a 10-bit capacitor digital-to-analog converter (DAC with four scaled reference voltages. In addition, a simple up/down counter-based digital processing logic is proposed to perform complex calculations for multiple sampling and digital correlated double sampling. To verify the proposed multiple sampling method, a 256 × 128 pixel array CIS with 12-bit SAR ADCs was fabricated using 0.18 μm CMOS process. The measurement results shows that the proposed multiple sampling method reduces each A/D conversion time from 1.2 μs to 0.45 μs and random noise from 848.3 μV to 270.4 μV, achieving a dynamic range of 68.1 dB and an SNR of 39.2 dB.

  14. Wide-bandwidth electron bolometric mixers - A 2DEG prototype and potential for low-noise THz receivers

    Science.gov (United States)

    Yang, Jian-Xun; Agahi, Farid; Dai, Dong; Musante, Charles F.; Grammer, Wes; Lau, Kei M.; Yngvesson, K. S.

    1993-01-01

    This paper presents a new type of electron bolometric ('hot electron') mixer. We have demonstrated a 3 order-of-magnitude improvement in the bandwidth compared with previously known types of electron bolometric mixers, by using the two-dimensional electron gas (2DEG) medium at the heterointerface between AlGaAs and GaAs. We have tested both in-house MOCVD-grown material and MBE material, with similar results. The conversion loss (Lc) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that Lc can be decreased to about 10 dB in future devices. Calculated and measured curves of Lc versus P(LO), and I(DC), respectively, agree well. We argue that there are several different configurations of electron bolometric mixers, which will all show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

  15. Design and test results of a low-noise readout integrated circuit for high-energy particle detectors

    International Nuclear Information System (INIS)

    Zhang Mingming; Chen Zhongjian; Zhang Yacong; Lu Wengao; Ji Lijiu

    2010-01-01

    A low-noise readout integrated circuit for high-energy particle detector is presented. The noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source degeneration. Continuous-time semi-Gaussian filter is chosen to avoid switch noise. The peaking time of pulse shaper and the gain can be programmed to satisfy multi-application. The readout integrated circuit has been designed and fabricated using a 0.35 μm double-poly triple-metal CMOS technology. Test results show the functions of the readout integrated circuit are correct. The equivalent noise charge with no detector connected is 500-700 e in the typical mode, the gain is tunable within 13-130 mV/fC and the peaking time varies from 0.7 to 1.6 μs, in which the average gain is about 20.5 mV/fC, and the linearity reaches 99.2%. (authors)

  16. Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors

    International Nuclear Information System (INIS)

    Ottaviani, Tony; Karim, Karim S.; Nathan, Arokia; Rowlands, John A.

    2006-01-01

    Diagnostic digital fluoroscopic applications continuously expose patients to low doses of x-ray radiation, posing a challenge to both the digital imaging pixel and readout electronics when amplifying small signal x-ray inputs. Traditional switch-based amorphous silicon imaging solutions, for instance, have produced poor signal-to-noise ratios (SNRs) at low exposure levels owing to noise sources from the pixel readout circuitry. Current-mediated amorphous silicon pixels are an improvement over conventional pixel amplifiers with an enhanced SNR across the same low-exposure range, but whose output also becomes nonlinear with increasing dosage. A low-noise SNR enhancing readout circuit has been developed that enhances the charge gain of the current-mediated active pixel sensor (C-APS). The solution takes advantage of the current-mediated approach, primarily integrating the signal input at the desired frequency necessary for large-area imaging, while adding minimal noise to the signal readout. Experimental data indicates that the readout circuit can detect pixel outputs over a large bandwidth suitable for real-time digital diagnostic x-ray fluoroscopy. Results from hardware testing indicate that the minimum achievable C-APS output current that can be discerned at the digital fluoroscopic output from the enhanced SNR readout circuit is 0.341 nA. The results serve to highlight the applicability of amorphous silicon current-mediated pixel amplifiers for large-area flat panel x-ray imagers

  17. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  18. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

  19. Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

    Science.gov (United States)

    Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

    2016-02-23

    We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO₂ and 15 ppm-NH₃ is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  20. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

    2014-01-01

    In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

    2013-01-01

    The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

  2. Spray cooling

    International Nuclear Information System (INIS)

    Rollin, Philippe.

    1975-01-01

    Spray cooling - using water spraying in air - is surveyed as a possible system for make-up (peak clipping in open circuit) or major cooling (in closed circuit) of the cooling water of the condensers in thermal power plants. Indications are given on the experiments made in France and the systems recently developed in USA, questions relating to performance, cost and environmental effects of spray devices are then dealt with [fr

  3. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  4. A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

    Science.gov (United States)

    2015-07-01

    A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs Andong Huang1, 2, ZhengZhong2, 3, and Yongxin Guo2, 3...Suzhou Research Institute, Suzhou, China Abstract — A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is...parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges

  5. Suppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements

    Science.gov (United States)

    Volcheck, V. S.; Stempitsky, V. R.

    2017-11-01

    Self-heating has an adverse effect on characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs). Various solutions to the problem have been proposed, however, a temperature rise due to dissipated electrical power still hinders the production of high power and high speed GaN devices. In this paper, thermal management of GaN HEMT via few-layer graphene (FLG) heat spreading elements is investigated. It is shown that integration of the FLG elements on top of the device structure considerably reduces the maximum temperature and improves the DC and small signal AC performance.

  6. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

    OpenAIRE

    Kühn, J.

    2011-01-01

    This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

  7. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

    International Nuclear Information System (INIS)

    Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

    2010-01-01

    This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

  8. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  9. Design of low power common-gate low noise amplifier for 2.4 GHz wireless sensor network applications

    International Nuclear Information System (INIS)

    Zhang Meng; Li Zhiqun

    2012-01-01

    This paper presents a differential low power low noise amplifier designed for the wireless sensor network (WSN) in a TSMC 0.18 μm RF CMOS process. A two-stage cross-coupling cascaded common-gate (CG) topology has been designed as the amplifier. The first stage is a capacitive cross-coupling topology. It can reduce the power and noise simultaneously. The second stage is a positive feedback cross-coupling topology, used to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to improve the gain of the LNA. A differential inductor has been designed as the load to achieve reasonable gain. This inductor has been simulated by the means of momentum electromagnetic simulation in ADS. A 'π' circuit model has been built as the inductor model by iteration in ADS. The inductor has been fabricated separately to verify the model. The LNA has been fabricated and measured. The LNA works well centered at 2.44 GHz. The measured gain S 21 is variable with high gain at 16.8 dB and low gain at 1 dB. The NF (noise figure) at high gain mode is 3.6 dB, the input referenced 1 dB compression point (IP1dB) is about −8 dBm and the IIP3 is 2 dBm at low gain mode. The LNA consumes about 1.2 mA current from 1.8 V power supply.

  10. Ultra-low noise supercontinuum source for ultra-high resolution optical coherence tomography at 1300 nm

    Science.gov (United States)

    Gonzalo, I. B.; Maria, M.; Engelsholm, R. D.; Feuchter, T.; Leick, L.; Moselund, P. M.; Podoleanu, A.; Bang, O.

    2018-02-01

    Supercontinuum (SC) sources are of great interest for many applications due to their ultra-broad optical bandwidth, good beam quality and high power spectral density [1]. In particular, the high average power over large bandwidths makes SC light sources excellent candidates for ultra-high resolution optical coherence tomography (UHR-OCT) [2-5]. However, conventional SC sources suffer from high pulse-to-pulse intensity fluctuations as a result of the noise-sensitive nonlinear effects involved in the SC generation process [6-9]. This intensity noise from the SC source can limit the performance of OCT, resulting in a reduced signal-to-noise ratio (SNR) [10-12]. Much work has been done to reduce the noise of the SC sources for instance with fiber tapers [7,8] or increasing the repetition rate of the pump laser for averaging in the spectrometer [10,12]. An alternative approach is to use all-normal dispersion (ANDi) fibers [13,14] to generate SC light from well-known coherent nonlinear processes [15-17]. In fact, reduction of SC noise using ANDi fibers compared to anomalous dispersion SC pumped by sub-picosecond pulses has been recently demonstrated [18], but a cladding mode was used to stabilize the ANDi SC. In this work, we characterize the noise performance of a femtosecond pumped ANDi based SC and a commercial SC source in an UHR-OCT system at 1300 nm. We show that the ANDi based SC presents exceptional noise properties compared to a commercial source. An improvement of 5 dB in SNR is measured in the UHR-OCT system, and the noise behavior resembles that of a superluminiscent diode. This preliminary study is a step forward towards development of an ultra-low noise SC source at 1300 nm for ultra-high resolution OCT.

  11. SENSROC4: An Multichannel Low-Noise Front-End Readout ASIC Dedicated to CZT Detectors for PET Imaging

    International Nuclear Information System (INIS)

    Gao, W.; Liu, H.; Gao, D.; Gan, B.; Wei, T.; Hu, Y.

    2013-06-01

    In this paper, we present the design of a novel low-noise front-end readout application-specific integrated circuit (ASIC) for our small animal PET systems which objective is to achieve the following performances, the spatial resolution of 1 mm 3 , the detection efficiency of 15 % and the time resolution of 1 ns. A cascade amplifier based on the PMOS input transistor is selected to realize the charge-sensitive amplifier (CSA) for the sake of good noise performances. The output of the CSA is split into two branches. One is connected to a slow shaper for energy measurements. The other is connected to a fast shaper for time acquisition. A novel monostable circuit is designed to adjust the time delay of the trigger signals so that the peak value of the shaped voltages can be sampled and stored. Based on the above techniques, an eight-channel front-end readout prototype chip is designed and implemented in 0.35 μm CMOS process. The die size is 2.286 mm x 2.282 mm. The input range of the ASIC is from 2000 e- to 180000 e-, reflecting to the energy of the gamma ray from 11.2 keV to 1 MeV. The gain of the readout channel is 65 V/pC. The best test result of ENC is 86.5 e- at zero farad plus 9.3 e- per pico-farad. The nonlinearity is less than 3 %. The crosstalk is less than 2 %. The power dissipation is about 9 mW/channel (authors)

  12. A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

    Science.gov (United States)

    Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

    2013-04-01

    In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.

  13. A low noise single-transistor transimpedance preamplifier for Fourier-transform mass spectrometry using a T feedback network.

    Science.gov (United States)

    Lin, Tzu-Yung; Green, Roger J; O'Connor, Peter B

    2012-09-01

    A novel single-transistor transimpedance preamplifier has been introduced for improving performance in Fourier-transform ion cyclotron resonance (FT-ICR) mass spectrometry. A low noise junction field-effect transistor (JFET), BF862, is used as the main amplification stage of this trans-impedance preamplifier, and a T-shaped feedback network is introduced as both the feedback and the gate biasing solutions. The T feedback network has been studied using an operational amplifier (Op Amp), AD8099. Such a feedback system allows ~100-fold less feedback resistance at a given transimpedance, hence preserving bandwidth, which is beneficial to applications demanding high gain. The single-transistor preamplifier yields a tested transimpedance of ~10(4) Ω (80 dBΩ) in the frequency range between 1 kHz and 1 MHz (mass-to-charge ratio, m/z, of around 180-180k for a 12-T FT-ICR system), with a low power consumption of ~6 mW, which implies that this preamplifier is well suited to a 12-T FT-ICR mass spectrometer. In trading noise performance for higher trans-impedance, an alternative preamplifier design, an AD8099 preamplifier with the T feedback network, has also been studied with a capability of ~10(6) Ω (120 dBΩ) transimpedance in the same frequency range. The resistive components in the T feedback network reported here can be replaced by complex impedances, which allows adaptation of this feedback system to other frequency, transimpedance, and noise characteristics for applications not only in other mass spectrometers, such as Orbitrap, time-of-flight (TOF), and ion trap systems, but also in other charge/current detecting systems such as spectroscopy systems, microscopy systems, optical communication systems, or charge-coupled devices (CCDs).

  14. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Boardman, D

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  15. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    International Nuclear Information System (INIS)

    Boardman, D.

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  16. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    OpenAIRE

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten; Vidkjær, Jens

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 2...

  17. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xi-C.; Shur, Michael S.

    2012-01-01

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  18. Reliability improvement in GaN HEMT power device using a field plate approach

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung

    2017-07-01

    This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.

  19. AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

    Directory of Open Access Journals (Sweden)

    S. Taking

    2011-01-01

    Full Text Available Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1 Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2 mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

  20. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2012-07-28

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  1. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    Science.gov (United States)

    Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-12-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

  2. New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

    Science.gov (United States)

    Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

    2018-06-01

    New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

  3. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    International Nuclear Information System (INIS)

    Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2016-01-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

  4. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

    Science.gov (United States)

    Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2017-12-01

    We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

  5. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

    Science.gov (United States)

    Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2017-06-01

    We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages ( V th) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

  6. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  7. Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

    Science.gov (United States)

    Saravana Kumar, R.; Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.

    2018-03-01

    The paper reports on the influence of a barrier thickness and gate length on the various device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC and RF performance of the device have been studied by varying the barrier thickness from 1 to 5 nm and gate length from 10 to 150 nm, respectively. As the gate length is reduced below 50 nm regime, the barrier thickness plays an important role in device performance. Scaling the gate length leads to higher transconductance and high frequency operations with the expense of poor short channel effects. The authors claim that the 30-nm gate length, mole fractions tuned In0.53Ga0.47As/In0.7Ga0.3As/In0.53Ga0.47As subchannel DG-HEMT with optimised device structure of 2 nm In0.48Al0.52As barrier layer show a peak gm of 3.09 mS/µm, VT of 0.29 V, ION/IOFF ratio of 2.24 × 105, subthreshold slope 73 mV/decade and drain induced barrier lowering 68 mV/V with fT and fmax of 776 and 905 GHz at Vds = 0.5 V is achieved. These superior performances are achieved by using double-gate architecture with reduced gate to channel distance.

  8. Analysis of the thermal behavior of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Russo, Salvatore; D’Alessandro, Vincenzo; Costagliola, Maurizio; Sasso, Grazia; Rinaldi, Niccolò

    2012-01-01

    Highlights: ► The thermal behavior of advanced multifinger AlGaN/GaN HEMTs grown on SiC is analyzed. ► The study is performed through accurate FEM simulations and DC/dynamic measurements. ► The FEM analysis is supported by an in-house tool devised for a smart mesh generation. ► Illustrative technology/layout guidelines to minimize the thermal issues are provided. - Abstract: The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations – based on a novel in-house tool devised to automatically build the device mesh – are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

  9. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2015-01-01

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit

  10. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Po-Chien; Cheng, Stone, E-mail: stonecheng@mail.nctu.edu.tw

    2015-08-15

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

  11. Extended behavioural modelling of FET and lattice-mismatched HEMT devices

    Science.gov (United States)

    Khawam, Yahya; Albasha, Lutfi

    2017-07-01

    This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

  12. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  13. Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

    NARCIS (Netherlands)

    Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

    2004-01-01

    We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

  14. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d...

  15. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  16. Field plated 0.15 μm GaN HEMTs for millimeter-wave application

    International Nuclear Information System (INIS)

    Ren Chunjiang; Li Zhonghui; Yu Xuming; Wang Quanhui; Wang Wen; Chen Tangsheng; Zhang Bin

    2013-01-01

    SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition. Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate. Gate recessing was performed to control the threshold voltage of the devices. The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz. Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%, respectively, for a 0.15 mm gate width device operated at a 24 V drain bias. The developed 0.15 μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development. (semiconductor devices)

  17. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  18. Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

    Science.gov (United States)

    Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

    2016-12-01

    This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

  19. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

    Science.gov (United States)

    Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

    2017-09-01

    In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

  20. Versatile quantitative phase imaging system applied to high-speed, low noise and multimodal imaging (Conference Presentation)

    Science.gov (United States)

    Federici, Antoine; Aknoun, Sherazade; Savatier, Julien; Wattellier, Benoit F.

    2017-02-01

    Quadriwave lateral shearing interferometry (QWLSI) is a well-established quantitative phase imaging (QPI) technique based on the analysis of interference patterns of four diffraction orders by an optical grating set in front of an array detector [1]. As a QPI modality, this is a non-invasive imaging technique which allow to measure the optical path difference (OPD) of semi-transparent samples. We present a system enabling QWLSI with high-performance sCMOS cameras [2] and apply it to perform high-speed imaging, low noise as well as multimodal imaging. This modified QWLSI system contains a versatile optomechanical device which images the optical grating near the detector plane. Such a device is coupled with any kind of camera by varying its magnification. In this paper, we study the use of a sCMOS Zyla5.5 camera from Andor along with our modified QWLSI system. We will present high-speed live cell imaging, up to 200Hz frame rate, in order to follow intracellular fast motions while measuring the quantitative phase information. The structural and density information extracted from the OPD signal is complementary to the specific and localized fluorescence signal [2]. In addition, QPI detects cells even when the fluorophore is not expressed. This is very useful to follow a protein expression with time. The 10 µm spatial pixel resolution of our modified QWLSI associated to the high sensitivity of the Zyla5.5 enabling to perform high quality fluorescence imaging, we have carried out multimodal imaging revealing fine structures cells, like actin filaments, merged with the morphological information of the phase. References [1]. P. Bon, G. Maucort, B. Wattellier, and S. Monneret, "Quadriwave lateral shearing interferometry for quantitative phase microscopy of living cells," Opt. Express, vol. 17, pp. 13080-13094, 2009. [2] P. Bon, S. Lécart, E. Fort and S. Lévêque-Fort, "Fast label-free cytoskeletal network imaging in living mammalian cells," Biophysical journal, 106

  1. Low-power low-noise mixed-mode VLSI ASIC for infinite dynamic range imaging applications

    Science.gov (United States)

    Turchetta, Renato; Hu, Y.; Zinzius, Y.; Colledani, C.; Loge, A.

    1998-11-01

    Solid state solutions for imaging are mainly represented by CCDs and, more recently, by CMOS imagers. Both devices are based on the integration of the total charge generated by the impinging radiation, with no processing of the single photon information. The dynamic range of these devices is intrinsically limited by the finite value of noise. Here we present the design of an architecture which allows efficient, in-pixel, noise reduction to a practically zero level, thus allowing infinite dynamic range imaging. A detailed calculation of the dynamic range is worked out, showing that noise is efficiently suppressed. This architecture is based on the concept of single-photon counting. In each pixel, we integrate both the front-end, low-noise, low-power analog part and the digital part. The former consists of a charge preamplifier, an active filter for optimal noise bandwidth reduction, a buffer and a threshold comparator, and the latter is simply a counter, which can be programmed to act as a normal shift register for the readout of the counters' contents. Two different ASIC's based on this concept have been designed for different applications. The first one has been optimized for silicon edge-on microstrips detectors, used in a digital mammography R and D project. It is a 32-channel circuit, with a 16-bit binary static counter.It has been optimized for a relatively large detector capacitance of 5 pF. Noise has been measured to be equal to 100 + 7*Cd (pF) electron rms with the digital part, showing no degradation of the noise performances with respect to the design values. The power consumption is 3.8mW/channel for a peaking time of about 1 microsecond(s) . The second circuit is a prototype for pixel imaging. The total active area is about (250 micrometers )**2. The main differences of the electronic architecture with respect to the first prototype are: i) different optimization of the analog front-end part for low-capacitance detectors, ii) in- pixel 4-bit comparator

  2. Advanced Subsonic Technology (AST) 22-Inch Low Noise Research Fan Rig Preliminary Design of ADP-Type Fan 3

    Science.gov (United States)

    Jeracki, Robert J. (Technical Monitor); Topol, David A.; Ingram, Clint L.; Larkin, Michael J.; Roche, Charles H.; Thulin, Robert D.

    2004-01-01

    This report presents results of the work completed on the preliminary design of Fan 3 of NASA s 22-inch Fan Low Noise Research project. Fan 3 was intended to build on the experience gained from Fans 1 and 2 by demonstrating noise reduction technology that surpasses 1992 levels by 6 dB. The work was performed as part of NASA s Advanced Subsonic Technology (AST) program. Work on this task was conducted in the areas of CFD code validation, acoustic prediction and validation, rotor parametric studies, and fan exit guide vane (FEGV) studies up to the time when a NASA decision was made to cancel the design, fabrication and testing phases of the work. The scope of the program changed accordingly to concentrate on two subtasks: (1) Rig data analysis and CFD code validation and (2) Fan and FEGV optimization studies. The results of the CFD code validation work showed that this tool predicts 3D flowfield features well from the blade trailing edge to about a chord downstream. The CFD tool loses accuracy as the distance from the trailing edge increases beyond a blade chord. The comparisons of noise predictions to rig test data showed that both the tone noise tool and the broadband noise tool demonstrated reasonable agreement with the data to the degree that these tools can reliably be used for design work. The section on rig airflow and inlet separation analysis describes the method used to determine total fan airflow, shows the good agreement of predicted boundary layer profiles to measured profiles, and shows separation angles of attack ranging from 29.5 to 27deg for the range of airflows tested. The results of the rotor parametric studies were significant in leading to the decision not to pursue a new rotor design for Fan 3 and resulted in recommendations to concentrate efforts on FEGV stator designs. The ensuing parametric study on FEGV designs showed the potential for 8 to 10 EPNdB noise reduction relative to the baseline.

  3. Ventilative Cooling

    DEFF Research Database (Denmark)

    Heiselberg, Per Kvols; Kolokotroni, Maria

    This report, by venticool, summarises the outcome of the work of the initial working phase of IEA ECB Annex 62 Ventilative Cooling and is based on the findings in the participating countries. It presents a summary of the first official Annex 62 report that describes the state-of-the-art of ventil......This report, by venticool, summarises the outcome of the work of the initial working phase of IEA ECB Annex 62 Ventilative Cooling and is based on the findings in the participating countries. It presents a summary of the first official Annex 62 report that describes the state......-of-the-art of ventilative cooling potentials and limitations, its consideration in current energy performance regulations, available building components and control strategies and analysis methods and tools. In addition, the report provides twenty six examples of operational buildings using ventilative cooling ranging from...

  4. The silicon tracking system of the CBM experiment at FAIR. Development of microstrip sensors and signal transmission lines for a low-mass, low-noise system

    International Nuclear Information System (INIS)

    Singla, Minni

    2014-01-01

    In this thesis, different physical and electrical aspects of silicon microstrip sensors and low-mass multi-line readout cables have been investigated. These silicon microstrip sensors and readout cables will be used in the Silicon Tracking System (STS) of the fixed-target heavy-ion Compressed Baryonic Matter (CBM) experiment which is under development at the upcoming Facility for Antiproton and ion Research (FAIR) in Darmstadt, Germany. The highly segmented low-mass tracking system is a central CBM detector system to resolve the high tracking densities of charged particles originating from beam-target interactions. Considering the low material budget requirement the double-sided silicon microstrip detectors have been used in several planar tracking stations. The readout electronics is planned to be installed at the periphery of the tracking stations along with the cooling system. Low-mass multi-line readout cables shall bridge the distance between the microstrip sensors and the readout electronics. The CBM running operational scenario suggests that some parts of the tracking stations are expected to be exposed to a total integrated particle fluence of the order of 1 x 10 14 n eq /cm 2 . After 1 x 10 14 n eq /cm 2 the damaged modules in the tracking stations will be replaced. Thus radiation hard sensor is an important requirement for the sensors. Moreover, to cope with the high reaction rates, free-streaming (triggerless) readout electronics with online event reconstruction must be used which require high signal-to-noise (SNR) ratio (i.e., high signal efficiency, low noise contributions). Therefore, reduction in noise is a major goal of the sensor and cable development. For better insight into the different aspects of the silicon microstrip sensors and multi-line readout cables, the simulation study has been performed using SYNOPSYS TCAD tools. 3D models of the silicon microstrip sensors and the readout cables were implemented which is motivated by the stereoscopic

  5. 100 nm scale low-noise sensors based on aligned carbon nanotube networks: overcoming the fundamental limitation of network-based sensors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Minbaek; Lee, Joohyung; Kim, Tae Hyun; Lee, Hyungwoo; Lee, Byung Yang; Hong, Seunghun [Department of Physics and Astronomy, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742 (Korea, Republic of); Park, June; Seong, Maeng-Je [Department of Physics, Chung-Ang University, Heukseok-Dong, Dongjak-Gu, Seoul 156-756 (Korea, Republic of); Jhon, Young Min, E-mail: mseong@cau.ac.kr, E-mail: shong@phya.snu.ac.kr [Korea Institute of Science and Technology, Hawolgok-Dong, Seongbuk-Gu, Seoul 136-791 (Korea, Republic of)

    2010-02-05

    Nanoscale sensors based on single-walled carbon nanotube (SWNT) networks have been considered impractical due to several fundamental limitations such as a poor sensitivity and small signal-to-noise ratio. Herein, we present a strategy to overcome these fundamental problems and build highly-sensitive low-noise nanoscale sensors simply by controlling the structure of the SWNT networks. In this strategy, we prepared nanoscale width channels based on aligned SWNT networks using a directed assembly strategy. Significantly, the aligned network-based sensors with narrower channels exhibited even better signal-to-noise ratio than those with wider channels, which is opposite to conventional random network-based sensors. As a proof of concept, we demonstrated 100 nm scale low-noise sensors to detect mercury ions with the detection limit of {approx}1 pM, which is superior to any state-of-the-art portable detection system and is below the allowable limit of mercury ions in drinking water set by most government environmental protection agencies. This is the first demonstration of 100 nm scale low-noise sensors based on SWNT networks. Considering the increased interests in high-density sensor arrays for healthcare and environmental protection, our strategy should have a significant impact on various industrial applications.

  6. 100 nm scale low-noise sensors based on aligned carbon nanotube networks: overcoming the fundamental limitation of network-based sensors

    International Nuclear Information System (INIS)

    Lee, Minbaek; Lee, Joohyung; Kim, Tae Hyun; Lee, Hyungwoo; Lee, Byung Yang; Hong, Seunghun; Park, June; Seong, Maeng-Je; Jhon, Young Min

    2010-01-01

    Nanoscale sensors based on single-walled carbon nanotube (SWNT) networks have been considered impractical due to several fundamental limitations such as a poor sensitivity and small signal-to-noise ratio. Herein, we present a strategy to overcome these fundamental problems and build highly-sensitive low-noise nanoscale sensors simply by controlling the structure of the SWNT networks. In this strategy, we prepared nanoscale width channels based on aligned SWNT networks using a directed assembly strategy. Significantly, the aligned network-based sensors with narrower channels exhibited even better signal-to-noise ratio than those with wider channels, which is opposite to conventional random network-based sensors. As a proof of concept, we demonstrated 100 nm scale low-noise sensors to detect mercury ions with the detection limit of ∼1 pM, which is superior to any state-of-the-art portable detection system and is below the allowable limit of mercury ions in drinking water set by most government environmental protection agencies. This is the first demonstration of 100 nm scale low-noise sensors based on SWNT networks. Considering the increased interests in high-density sensor arrays for healthcare and environmental protection, our strategy should have a significant impact on various industrial applications.

  7. 100 nm scale low-noise sensors based on aligned carbon nanotube networks: overcoming the fundamental limitation of network-based sensors

    Science.gov (United States)

    Lee, Minbaek; Lee, Joohyung; Kim, Tae Hyun; Lee, Hyungwoo; Lee, Byung Yang; Park, June; Jhon, Young Min; Seong, Maeng-Je; Hong, Seunghun

    2010-02-01

    Nanoscale sensors based on single-walled carbon nanotube (SWNT) networks have been considered impractical due to several fundamental limitations such as a poor sensitivity and small signal-to-noise ratio. Herein, we present a strategy to overcome these fundamental problems and build highly-sensitive low-noise nanoscale sensors simply by controlling the structure of the SWNT networks. In this strategy, we prepared nanoscale width channels based on aligned SWNT networks using a directed assembly strategy. Significantly, the aligned network-based sensors with narrower channels exhibited even better signal-to-noise ratio than those with wider channels, which is opposite to conventional random network-based sensors. As a proof of concept, we demonstrated 100 nm scale low-noise sensors to detect mercury ions with the detection limit of ~1 pM, which is superior to any state-of-the-art portable detection system and is below the allowable limit of mercury ions in drinking water set by most government environmental protection agencies. This is the first demonstration of 100 nm scale low-noise sensors based on SWNT networks. Considering the increased interests in high-density sensor arrays for healthcare and environmental protection, our strategy should have a significant impact on various industrial applications.

  8. Cooling towers

    International Nuclear Information System (INIS)

    Korik, L.; Burger, R.

    1992-01-01

    What is the effect of 0.6C (1F) temperature rise across turbines, compressors, or evaporators? Enthalpy charts indicate for every 0.6C (1F) hotter water off the cooling tower will require an additional 2 1/2% more energy cost. Therefore, running 2.2C (4F) warmer due to substandard cooling towers could result in a 10% penalty for overcoming high heads and temperatures. If it costs $1,250,000.00 a year to operate the system, $125,000.00 is the energy penalty for hotter water. This paper investigates extra fuel costs involved in maintaining design electric production with cooling water 0.6C (1F) to 3C (5.5F) hotter than design. If design KWH cannot be maintained, paper will calculate dollar loss of saleable electricity. The presentation will conclude with examining the main causes of deficient cold water production. State-of-the-art upgrading and methodology available to retrofit existing cooling towers to optimize lower cooling water temperatures will be discussed

  9. Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.; Valinataj, Mojtaba

    2017-12-01

    In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage ( V BR ) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density ( P max ) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency ( f max ) and cut-off frequency (fT) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density ( P max ) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency ( f T ), the maximum oscillation frequency ( f max ) and the maximum available gain (MAG) of the proposed structure. However, the drain current ( I D ) of the proposed structure is reduced.

  10. Cooling tower

    Energy Technology Data Exchange (ETDEWEB)

    Norbaeck, P; Heneby, H

    1976-01-22

    Cooling towers to be transported on road vehicles as a unit are not allowed to exceed certain dimensions. In order to improve the efficiency of such a cooling tower (of cross-flow design and box-type body) with given dimensions, it is proposed to arrange at least one of the scrubbing bodies displaceable within a module or box. Then it can be moved out of the casing into working position, thereby increasing the front surface available for the inlet of air (and with it the efficiency) by nearly a factor of two.

  11. High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Krost, Alois; Hauser, Marcus J B

    2014-01-01

    The dynamics of cells of the slime mould Physarum polycephalum are investigated with a planar AlGaN/GaN high electron mobility transistor (HEMT) without any gate metallization. The source–drain contacts are used in a two-electrode arrangement whereas the free gate surface area is occupied by the Physarum cell. In order to understand the measured signals, basic properties of the interface between the cell and the HEMT surface were analysed by impedance spectroscopy. At high frequencies the interface impedance is governed by the conductance of the cell due to a direct current through the HEMT/cell interface. The locomotive dynamics of Physarum were recorded by the source–drain impedance at 10 kHz in combination with simultaneous video imaging that monitored the degree of occupancy of the HEMT surface by the cell. A precise correlation was found between the impedance and the coverage of the HEMT surface by the cell. It is observed that the entire region between the contacts is sensitive to the cell activity. Well-resolved cellular oscillations were observed for all measured parameters. Their periods corresponded to the typical periods of the intracellular shuttle streaming of protoplasma in Physarum. This demonstrates that high-frequency impedance measurements with AlGaN/GaN HEMT structures are well suited for the analysis of both the static parts of single Physarum cells as well as of their dynamic behaviour, such as their expansion and motility. (paper)

  12. Electrothermal DC characterization of GaN on Si MOS-HEMTs

    Science.gov (United States)

    Rodríguez, R.; González, B.; García, J.; Núñez, A.

    2017-11-01

    DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

  13. X-band 5-bit MMIC phase shifter with GaN HEMT technology

    Science.gov (United States)

    Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun

    2017-10-01

    The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.

  14. Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

    Directory of Open Access Journals (Sweden)

    Ronald A. Coutu

    2016-06-01

    Full Text Available The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN high electron mobility transistors (HEMT lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation is insufficient to assess lifetime at operating conditions.

  15. Analytical high frequency GaN HEMT model for noise simulations

    Science.gov (United States)

    Eshetu Muhea, Wondwosen; Mulugeta Yigletu, Fetene; Lazaro, Antonio; Iñiguez, Benjamin

    2017-12-01

    A compact high frequency model for AlGaN/GaN HEMT device valid for noise simulations is presented in this paper. The model is developed based on active transmission line approach and linear two port noise theory that makes it applicable for quasi static as well as non-quasi static device operation. The effects of channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the noise performance of the device is investigated. It is shown that there is an apparent increase in noise generated in the device due to the gate current related shot noise. The common noise figures of merit for HFET are calculated and verified with experimental data.

  16. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

    International Nuclear Information System (INIS)

    Rodilla, H; González, T; Mateos, J; Moschetti, G; Grahn, J

    2011-01-01

    In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n s , have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n s shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results

  17. Stochastic cooling

    International Nuclear Information System (INIS)

    Bisognano, J.; Leemann, C.

    1982-03-01

    Stochastic cooling is the damping of betatron oscillations and momentum spread of a particle beam by a feedback system. In its simplest form, a pickup electrode detects the transverse positions or momenta of particles in a storage ring, and the signal produced is amplified and applied downstream to a kicker. The time delay of the cable and electronics is designed to match the transit time of particles along the arc of the storage ring between the pickup and kicker so that an individual particle receives the amplified version of the signal it produced at the pick-up. If there were only a single particle in the ring, it is obvious that betatron oscillations and momentum offset could be damped. However, in addition to its own signal, a particle receives signals from other beam particles. In the limit of an infinite number of particles, no damping could be achieved; we have Liouville's theorem with constant density of the phase space fluid. For a finite, albeit large number of particles, there remains a residue of the single particle damping which is of practical use in accumulating low phase space density beams of particles such as antiprotons. It was the realization of this fact that led to the invention of stochastic cooling by S. van der Meer in 1968. Since its conception, stochastic cooling has been the subject of much theoretical and experimental work. The earliest experiments were performed at the ISR in 1974, with the subsequent ICE studies firmly establishing the stochastic cooling technique. This work directly led to the design and construction of the Antiproton Accumulator at CERN and the beginnings of p anti p colliding beam physics at the SPS. Experiments in stochastic cooling have been performed at Fermilab in collaboration with LBL, and a design is currently under development for a anti p accumulator for the Tevatron

  18. Design and construction of a high-stability, low-noise power supply for use with high-resolution electron energy loss spectrometers

    International Nuclear Information System (INIS)

    Katz, J.E.; Davies, P.W.; Crowell, J.E.; Somorjai, G.A.

    1982-01-01

    The design and construction of a high-stability, low-noise power supply which provides potentials for the lens and analyzer elements of a 127 0 Ehrhardt-type high-resolution electron energy loss spectrometer (HREELS) is described. The supply incorporates a filament emission-control circuit and facilities for measuring electron beam current at each spectrometer element, thus facilitating optimal tuning of the spectrometer. Spectra obtained using this supply are shown to have a four-fold improvement in signal-to-noise ratio and a higher resolution of the vibrational loss features when compared with spectra taken using a previously existing supply based on passive potential divider networks

  19. A very cool cooling system

    CERN Multimedia

    Antonella Del Rosso

    2015-01-01

    The NA62 Gigatracker is a jewel of technology: its sensor, which delivers the time of the crossing particles with a precision of less than 200 picoseconds (better than similar LHC detectors), has a cooling system that might become the precursor to a completely new detector technique.   The 115 metre long vacuum tank of the NA62 experiment. The NA62 Gigatracker (GTK) is composed of a set of three innovative silicon pixel detectors, whose job is to measure the arrival time and the position of the incoming beam particles. Installed in the heart of the NA62 detector, the silicon sensors are cooled down (to about -20 degrees Celsius) by a microfluidic silicon device. “The cooling system is needed to remove the heat produced by the readout chips the silicon sensor is bonded to,” explains Alessandro Mapelli, microsystems engineer working in the Physics department. “For the NA62 Gigatracker we have designed a cooling plate on top of which both the silicon sensor and the...

  20. AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

    International Nuclear Information System (INIS)

    Leclaire, P; Chenot, S; Cordier, Y; Buchaillot, L; Théron, D; Faucher, M

    2014-01-01

    In the present work, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown with very thin buffer layers on silicon substrates in view of developing nano electromechanical systems (NEMS) for sensors applications. To ensure transducer operation in the MHz range together with low mechanical stiffness, epitaxial structures with thickness below 1 μm have to be developed. We report on the evolution of the material and electrical properties of AlGaN/GaN HEMTs with thicknesses varying from 2 μm to 0.5 μm. The set of parameters obtained includes in-plane Young modulus of 250 GPa in association with carrier density of 6 × 10 12 cm −2 and mobility above 1000 cm 2  V −1  s −1 . The resulting behavior of demonstration transistors validates these epilayers for electromechanical resonators operation. (paper)

  1. Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

    Science.gov (United States)

    Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

    2015-02-01

    InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

  2. A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

    Directory of Open Access Journals (Sweden)

    Dong-Hwan Shin

    2017-10-01

    Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

  3. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  4. A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

    Science.gov (United States)

    Nguyen, Tung The-Lam; Kim, Sam-Dong

    2017-11-01

    We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I-V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.

  5. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  6. Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

    Science.gov (United States)

    Kumar, Sona P.; Agrawal, Anju; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

    2008-07-01

    A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.

  7. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d......-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

  8. Cooling pancakes

    International Nuclear Information System (INIS)

    Bond, J.R.; Wilson, J.R.

    1984-01-01

    In theories of galaxy formation with a damping cut-off in the density fluctuation spectrum, the first non-linear structures to form are Zeldovich pancakes in which dissipation separates gas from any collisionless dark matter then present. One-dimensional numerical simulations of the collapse, shock heating, and subsequent thermal evolution of pancakes are described. Neutrinos (or any other cool collisionless particles) are followed by direct N-body methods and the gas by Eulerian hydrodynamics with conduction as well as cooling included. It is found that the pressure is relatively uniform within the shocked region and approximately equals the instantaneous ram pressure acting at the shock front. An analytic theory based upon this result accurately describes the numerical calculations. (author)

  9. Cool Sportswear

    Science.gov (United States)

    1982-01-01

    New athletic wear design based on the circulating liquid cooling system used in the astronaut's space suits, allows athletes to perform more strenuous activity without becoming overheated. Techni-Clothes gear incorporates packets containing a heat-absorbing gel that slips into an insulated pocket of the athletic garment and is positioned near parts of the body where heat transfer is most efficient. A gel packet is good for about one hour. Easily replaced from a supply of spares in an insulated container worn on the belt. The products, targeted primarily for runners and joggers and any other athlete whose performance may be affected by hot weather, include cooling headbands, wrist bands and running shorts with gel-pack pockets.

  10. Cooling systems

    International Nuclear Information System (INIS)

    Coutant, C.C.

    1978-01-01

    Progress on the thermal effects project is reported with regard to physiology and distribution of Corbicula; power plant effects studies on burrowing mayfly populations; comparative thermal responses of largemouth bass from northern and southern populations; temperature selection by striped bass in Cherokee Reservoir; fish population studies; and predictive thermoregulation by fishes. Progress is also reported on the following; cause and ecological ramifications of threadfin shad impingement; entrainment project; aquaculture project; pathogenic amoeba project; and cooling tower drift project

  11. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  12. Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

    International Nuclear Information System (INIS)

    Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

    2011-01-01

    Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

  13. Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2013-01-01

    Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and tested an all-GaN-based power module. In a 200 V, 45 A module, each switching element comprises three GaN chips in parallel, each of which includes six 2.1 A AlGaN/GaN-on-Si HEMT cells. The cells are wire-bonded in parallel to scale up the power rating. Static I D -V DS characteristics of the module are experimentally obtained over widely varying base plate temperatures, and a low on-state resistance is obtained at an elevated temperature of 125 °C. The fabricated module has a blocking voltage exceeding 200 V at a reverse-leakage current density below 1 mA/mm. Two standard temperature measurements are made to provide a simple means of determining mean cell temperature in the module. Self-heating in AlGaN/GaN HEMTs is studied by electrical analysis and infrared thermography. Electrical analysis provides fast temperature overviews while infrared thermography reveals temperature behavior in selected active regions. The current distribution among cells was acceptable over the measured operating temperature range. The characterization of electrical performance and mechanical performance confirm the potential use of the packaged module for high-power applications. -- Highlights: • This work proposes the design, development, and testing of all-GaN power module. • We develop module package and determine their thermal and electrical properties. • ID-VDS characteristics are obtained over a wide range of base plate temperatures. • Self-heating in GaN HEMTs is studied by electrical analysis and IR thermography

  14. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

    Science.gov (United States)

    Gupta, Akriti; Chatterjee, Neel; Kumar, Pradeep; Pandey, Sujata

    2017-08-01

    In this paper, we present the effect of passivation layer on the electrical characteristics of AlGaN/GaN HEMT. The energy band diagram, drain current voltage characteristics, transconductance and cut off frequency was calculated for both long channel and short channel devices. It was found that the electrical characteristics of the device improve with the introduction of high K dielectric in the passivation layer. The results obtained agree well with the data available in literature.

  15. Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

    Directory of Open Access Journals (Sweden)

    Po-Chien Chou

    2017-02-01

    Full Text Available This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS high electron mobility transistors (HEMTs. When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: VDS = 0 V, off, and off (cascode-connection states. Changes of direct current (DC figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments.

  16. Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

    International Nuclear Information System (INIS)

    Zhao, M.; Liu, X.Y.; Zheng, Y.K.; Li, Yankui; Ouyang, Sihua

    2013-01-01

    Highlights: ► We report the behavior of the current–voltage characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. ► The origin of the leakage current and the current transport behaviors are reported. ► There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height in homogeneities. -- Abstract: In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (R s ) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, R s , G m and Schottky leakage current values are seen to be strongly temperature dependent

  17. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

    Science.gov (United States)

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-03-03

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz.

  18. Low-Noise Active Decoupling Circuit and its Application to 13C Cryogenic RF Coils at 3T

    DEFF Research Database (Denmark)

    Sanchez, Juan Diego; Søvsø Szocska Hansen, Esben; Laustsen, Christoffer

    2017-01-01

    We analyze the loss contributions in a small, 50-mm-diameter receive-only coil for carbon-13 (13C) magnetic resonance imaging at 3 T for 3 different circuits, which, including active decoupling, are compared in terms of their Q-factors and signal-to-noise ratio (SNR). The results show that a circ......We analyze the loss contributions in a small, 50-mm-diameter receive-only coil for carbon-13 (13C) magnetic resonance imaging at 3 T for 3 different circuits, which, including active decoupling, are compared in terms of their Q-factors and signal-to-noise ratio (SNR). The results show...... that a circuit using unsegmented tuning and split matching capacitors can provide 20% SNR enhancement at room temperature compared with that using more traditional designs. The performance of the proposed circuit was also measured when cryogenically cooled to 105 K, and an additional 1.6-fold SNR enhancement...... was achieved on a phantom. The enhanced circuit performance is based on the low capacitance needed to match to 50 when coil losses are low, which significantly reduces the proportion of the current flowing through the matching network and therefore minimizes this loss contribution. This effect makes...

  19. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Li, Baikui; Tang, Xi; Chen, Kevin J.

    2015-01-01

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

  20. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-03-02

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

  1. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications

    International Nuclear Information System (INIS)

    Ahmed, S; Bokhari, S H; Amin, F; Khan, L A; Hussain, Z

    2013-01-01

    Ion-implanted AlGaN/GaN High Electron Mobility Transistors (HEMT) devices were studied thoroughly to look into the possibilities of enhancing efficiency for high-power and high-frequency electronic and gas sensing applications. A dedicated experimental design was created in order to study the influence of the physical parameters in response to high energy (by virtue of in-situ beam heating due to highly energetic implantation) ion implantation to the active device regions in nitride HEMT structures. Disorder or damage created in the HEMT structure was then studied carefully with electrical characterization techniques such as Hall, I-V and G-V measurements. The evolution of the electrical characteristics affecting the high-power, high-frequency and ultra-high efficiency gas sensing operations were also analyzed by subjecting the HEMT active device regions to progressive time-temperature annealing cycles. Our suggested model can also provide a functional process engineering window to control the extent of 2D Electron mobility in AlGaN/GaN HEMT devices undergoing a full cycle of thermal impact (i.e. from a desirable conductive region to a highly compensated one)

  2. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  4. Cool snacks

    DEFF Research Database (Denmark)

    Grunert, Klaus G; Brock, Steen; Brunsø, Karen

    2016-01-01

    Young people snack and their snacking habits are not always healthy. We address the questions whether it is possible to develop a new snack product that adolescents will find attractive, even though it is based on ingredients as healthy as fruits and vegetables, and we argue that developing...... such a product requires an interdisciplinary effort where researchers with backgrounds in psychology, anthropology, media science, philosophy, sensory science and food science join forces. We present the COOL SNACKS project, where such a blend of competences was used first to obtain thorough insight into young...... people's snacking behaviour and then to develop and test new, healthier snacking solutions. These new snacking solutions were tested and found to be favourably accepted by young people. The paper therefore provides a proof of principle that the development of snacks that are both healthy and attractive...

  5. Cool visitors

    CERN Multimedia

    2006-01-01

    Pictured, from left to right: Tim Izo (saxophone, flute, guitar), Bobby Grant (tour manager), George Pajon (guitar). What do the LHC and a world-famous hip-hop group have in common? They are cool! On Saturday, 1st July, before their appearance at the Montreux Jazz Festival, three members of the 'Black Eyed Peas' came on a surprise visit to CERN, inspired by Dan Brown's Angels and Demons. At short notice, Connie Potter (Head of the ATLAS secretariat) organized a guided tour of ATLAS and the AD 'antimatter factory'. Still curious, lead vocalist Will.I.Am met CERN physicist Rolf Landua after the concert to ask many more questions on particles, CERN, and the origin of the Universe.

  6. New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region

    Science.gov (United States)

    Capasso, F.; Tsang, W. T.; Williams, G. F.

    1982-12-01

    Recent experimental and theoretical results on a new class of low noise avalanche photo-diodes are reviewed. A large enhancement of the impact ionization rates ratio (a/(3=10) has been demonstrated in AlGaAs/GaAs superlattices and graded band gap detector structures. In addition two novel photodiodes ("staircase" and "channeling" APDs) where only electrons multiply, have been proposed. The staircase APD is the solid state analog of the photo-multiplier with discrete dynodes. It has a low operating voltage (5-20 volts) and a lower excess noise factor, in the ideal case, than that of an ideal conventional APD The channeling APD is instead the solid state analog of a channeltron photomultiplier and has the unique feature of an ultrahigh a/β, ratio (≍∞) compatible with high gain (>100).

  7. Development of a low-noise, 4th-order readout ASIC for CdZnTe detectors in gamma spectrometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia, E-mail: jwang@nwpu.edu.cn [School of Computer Science and Engineering, Northwestern Polytechnical University, 127 West Youyixi Road, 710072 Xi' an (China); Su, Lin; Wei, Xiaomin; Zheng, Ran [School of Computer Science and Engineering, Northwestern Polytechnical University, 127 West Youyixi Road, 710072 Xi' an (China); Hu, Yann [IPHC, University of Strasbourg, 23 rue du loess, 67037 Strasbourg Cedex 02 (France)

    2016-09-21

    This paper presents an ASIC readout circuit development, which aims to achieve low noise. In order to compensate the leakage current and improve gain, a dual-stage CSA has been utilized. A 4th-order high-linearity shaper is proposed to obtain a Semi-Gaussian wave and further decrease the noise induced by the leakage current. The ASIC has been designed and fabricated in a standard commercial 2P4M 0.35 μm CMOS process. Die area of one channel is about 1190 μm×147 μm. The input charge range is 1.8 fC. The peaking time can be adjusted from 1 μs to 3 μs. Measured ENC is about 55e{sup −} (rms) at input capacitor of 0 F. The gain is 271 mV/fC at the peaking time of 1 μs.

  8. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

    Science.gov (United States)

    Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xun; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

    2018-06-01

    Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm-2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.

  9. Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

    Science.gov (United States)

    Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

    1991-01-01

    Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

  10. Electrical properties of AlGaN/GaN HEMTs in stretchable geometries

    Science.gov (United States)

    Tompkins, R. P.; Mahaboob, I.; Shahedipour-Sandvik, F.; Lazarus, N.

    2017-10-01

    Many biological materials are naturally soft and stretchable, far more so than crystalline semiconductors. Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materials, a field known as stretchable electronics. One common method for fabricating a highly brittle semiconductor device able to survive tens of percent strain is to incorporate stress relief structures ('waves'). Although the mechanical advantages of this approach are well known, the effects on the electrical behavior of a device such as a transistor compared to a more traditional geometry have not been studied. Here, AlGaN/GaN high electron mobility transistors (HEMTs) grown on rigid sapphire substrates were fabricated in a common wavy geometry, a sinusoid, with dimensions similar to those used in stretchable electronics. The study analyzes control parameters available to the designer including gate location along the sinusoid, angle the source-drain contacts make with the gate, as well as variation of the gate length at the peak of the sinusoid. Common electrical parameters such as saturation current density, threshold voltage, and transconductance were compared between the sinusoidal and conventional straight geometries and results found to fall to within experimental uncertainty, suggesting shifting to a stretchable geometry is possible without appreciably degrading semiconductor device performance.

  11. On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

    Science.gov (United States)

    Acurio, E.; Crupi, F.; Magnone, P.; Trojman, L.; Meneghesso, G.; Iucolano, F.

    2017-06-01

    This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ΔVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1 s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93 eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45 eV and 0.82 eV.

  12. Demonstration of an RF front-end based on GaN HEMT technology

    Science.gov (United States)

    Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

    2017-05-01

    The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

  13. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

    2005-05-01

    Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

    Science.gov (United States)

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

  15. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

    International Nuclear Information System (INIS)

    Zhong Yinghui; Zhang Yuming; Wang Xiantai; Su Yongbo; Cao Yuxiong; Jin Zhi; Liu Xinyu

    2012-01-01

    We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz. The characteristics of HEMTs with side-etched region lengths (L side ) of 300, 412 and 1070 nm were analyzed. With the increase in L side , the kink effect became notable in the DC characteristics, which resulted from the surface state and the effect of impact ionization. The kink effect was qualitatively explained through energy band diagrams, and then eased off by reducing the L side . Meanwhile, the L side dependence of the radio frequency characteristics, which were influenced by the parasitic capacitance, as well as the parasitic resistance of the source and drain, was studied. This work will be of great importance in fabricating high-performance InP HEMTs. (semiconductor devices)

  16. I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

    Science.gov (United States)

    Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

    2016-09-01

    Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

  17. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN HEMT channel

    Science.gov (United States)

    Mikhailovich, S. V.; Galiev, R. R.; Zuev, A. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Khabibullin, R. A.

    2017-08-01

    Field-effect high-electron-mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures with various gate lengths L g have been studied. The maximum values of current and power gaincutoff frequencies ( f T and f max, respectively) amounted to 88 and 155 GHz for HEMTs with L g = 125 nm, while those for the transistors with L g = 360 nm were 26 and 82 GHz, respectively. Based on the measured S-parameters, the values of elements in small-signal equivalent schemes of AlGaN/AlN/GaN HEMTs were extracted and the dependence of electron-injection velocity vinj on the gate-drain voltage was determined. The influence of L g and the drain-source voltage on vinj has been studied.

  18. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

    International Nuclear Information System (INIS)

    Lenka, T. R.; Panda, A. K.

    2011-01-01

    Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

  19. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Science.gov (United States)

    Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

    2016-01-01

    We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. PMID:26907298

  20. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Directory of Open Access Journals (Sweden)

    Yacine Halfaya

    2016-02-01

    Full Text Available We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO 2 and 15 ppm-NH 3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  1. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    International Nuclear Information System (INIS)

    Takano, H.; Hosogi, K.; Kato, T.

    1995-01-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

  2. Divertor cooling device

    International Nuclear Information System (INIS)

    Nakayama, Tadakazu; Hayashi, Katsumi; Handa, Hiroyuki

    1993-01-01

    Cooling water for a divertor cooling system cools the divertor, thereafter, passes through pipelines connecting the exit pipelines of the divertor cooling system and the inlet pipelines of a blanket cooling system and is introduced to the blanket cooling system in a vacuum vessel. It undergoes emission of neutrons, and cooling water in the divertor cooling system containing a great amount of N-16 which is generated by radioactivation of O-16 is introduced to the blanket cooling system in the vacuum vessel by way of pipelines, and after cooling, passes through exit pipelines of the blanket cooling system and is introduced to the outside of the vacuum vessel. Radiation of N-16 in the cooling water is decayed sufficiently with passage of time during cooling of the blanket, thereby enabling to decrease the amount of shielding materials such as facilities and pipelines, and ensure spaces. (N.H.)

  3. WORKSHOP: Beam cooling

    International Nuclear Information System (INIS)

    Anon.

    1994-01-01

    Cooling - the control of unruly particles to provide well-behaved beams - has become a major new tool in accelerator physics. The main approaches of electron cooling pioneered by Gersh Budker at Novosibirsk and stochastic cooling by Simon van der Meer at CERN, are now complemented by additional ideas, such as laser cooling of ions and ionization cooling of muons

  4. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Tikhomirov, V. G., E-mail: VV11111@yandex.ru [Saint Petersburg Electrotechnical University “LETI” (Russian Federation); Zemlyakov, V. E.; Volkov, V. V.; Parnes, Ya. M.; Vyuginov, V. N. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Cherkashin, N. A. [CEMES-CNRS-Université de Toulouse (France); Mizerov, M. N. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-02-15

    The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

  5. Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2017-02-01

    In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

  6. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  7. Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

    Directory of Open Access Journals (Sweden)

    Taizoh Sadoh

    2011-03-01

    Full Text Available The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  8. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

    2011-01-01

    The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, V(DS) = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  9. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

    Science.gov (United States)

    Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  10. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  11. Characterization and Modeling I(V of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

    Directory of Open Access Journals (Sweden)

    N. Benyahya

    2014-05-01

    Full Text Available In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3, barrier height (0.72 eV and series resistance (33 W were evaluated from I(V data, the threshold voltage (-2.42 V, the 2D gas density (1.35 ´ 1013 cm-2 and barrier height (0.94 eV were evaluated from C(V data.

  12. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

    Science.gov (United States)

    Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  13. Renewable Heating And Cooling

    Science.gov (United States)

    Renewable heating and cooling is a set of alternative resources and technologies that can be used in place of conventional heating and cooling technologies for common applications such as water heating, space heating, space cooling and process heat.

  14. Restaurant food cooling practices.

    Science.gov (United States)

    Brown, Laura Green; Ripley, Danny; Blade, Henry; Reimann, Dave; Everstine, Karen; Nicholas, Dave; Egan, Jessica; Koktavy, Nicole; Quilliam, Daniela N

    2012-12-01

    Improper food cooling practices are a significant cause of foodborne illness, yet little is known about restaurant food cooling practices. This study was conducted to examine food cooling practices in restaurants. Specifically, the study assesses the frequency with which restaurants meet U.S. Food and Drug Administration (FDA) recommendations aimed at reducing pathogen proliferation during food cooling. Members of the Centers for Disease Control and Prevention's Environmental Health Specialists Network collected data on food cooling practices in 420 restaurants. The data collected indicate that many restaurants are not meeting FDA recommendations concerning cooling. Although most restaurant kitchen managers report that they have formal cooling processes (86%) and provide training to food workers on proper cooling (91%), many managers said that they do not have tested and verified cooling processes (39%), do not monitor time or temperature during cooling processes (41%), or do not calibrate thermometers used for monitoring temperatures (15%). Indeed, 86% of managers reported cooling processes that did not incorporate all FDA-recommended components. Additionally, restaurants do not always follow recommendations concerning specific cooling methods, such as refrigerating cooling food at shallow depths, ventilating cooling food, providing open-air space around the tops and sides of cooling food containers, and refraining from stacking cooling food containers on top of each other. Data from this study could be used by food safety programs and the restaurant industry to target training and intervention efforts concerning cooling practices. These efforts should focus on the most frequent poor cooling practices, as identified by this study.

  15. Design and Measurement of a Low-Noise 64-Channels Front-End Readout ASIC for CdZnTe Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Bo; Wei, Tingcun; Gao, Wu; Liu, Hui; Hu, Yann [School of Computer Science and Technology, Northwestern Polytechnical University, Xi' an (China)

    2015-07-01

    Cadmium zinc telluride (CdZnTe) detectors, as one of the principal detectors for the next-generation X-ray and γ-ray imagers, have high energy resolution and supporting electrode patterning in the radiation environment at room-temperature. In the present, a number of internationally renowned research institutions and universities are actively using these detector systems to carry out researches of energy spectrum analysis, medical imaging, materials characterization, high-energy physics, nuclear plant monitoring, and astrophysics. As the most important part of the readout system for the CdZnTe detector, the front-end readout application specific integrated circuit (ASIC) would have an important impact on the performances of the whole detector system. In order to ensure the small signal to noise ratio (SNR) and sufficient range of the output signal, it is necessary to design a front-end readout ASIC with very low noise and very high dynamic range. In addition, radiation hardness should be considered when the detectors are utilized in the space applications and high energy physics experiments. In this paper, we present measurements and performances of a novel multi-channel radiation-hardness low-noise front-end readout ASIC for CdZnTe detectors. The readout circuits in each channel consist of charge sensitive amplifier, leakage current compensation circuit (LCC), CR-RC shaper, S-K filter, inverse proportional amplifier, peak detect and hold circuit (PDH), discriminator and trigger logic, time sequence control circuit and driving buffer. All of 64 readout channels' outputs enter corresponding inputs of a 64 channel multiplexer. The output of the mux goes directly out of the chip via the output buffer. The 64-channel readout ASIC is implemented using the TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 2.7 mm x 8 mm. At room temperature, the equivalent noise level of a typical channel reaches 66 e{sup -} (rms) at zero farad for a

  16. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2017-12-01

    Full Text Available In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS, no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  17. Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

    Science.gov (United States)

    Majumdar, Shubhankar; Das, S.; Biswas, D.

    2015-08-01

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

  18. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Zhang Guangchen; Feng Shiwei; Li Jingwan; Guo Chunsheng; Zhao Yan

    2012-01-01

    Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm −1 is achieved, corresponding to a temperature accuracy of ±3.2 °C for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8 °C/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally. (semiconductor devices)

  19. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Greenlee, Jordan D.; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

    2015-01-01

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10 14 H + /cm 2 , the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively

  20. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375 (United States); Specht, Petra; Dubon, Oscar D. [University of California at Berkeley, Berkeley, California 94720 (United States); Luysberg, Martina [ERC, Research Center Juelich GmbH, 52425 Juelich (Germany); Weatherford, Todd R. [Naval Postgraduate School, Monterey, California 93943 (United States)

    2015-08-24

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

  1. Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

    Science.gov (United States)

    Liu, Hui; Zhang, Zongjing; Luo, Weijun

    2018-06-01

    The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

  2. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Science.gov (United States)

    Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  3. Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

    NARCIS (Netherlands)

    Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

    2008-01-01

    We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

  4. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

    National Research Council Canada - National Science Library

    Fitch, R

    2002-01-01

    Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

  5. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  6. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    International Nuclear Information System (INIS)

    Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

    2015-01-01

    A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

  7. Characterization of 0.18- μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

    Science.gov (United States)

    Yoon, Hyung Sup; Min, Byoung-Gue; Lee, Jong Min; Kang, Dong Min; Ahn, Ho Kyun; Cho, Kyu-Jun; Do, Jae-Won; Shin, Min Jeong; Jung, Hyun-Wook; Kim, Sung Il; Kim, Hae Cheon; Lim, Jong Won

    2017-09-01

    We fabricated a 0.18- μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance ( g m ) of 345 mS/mm, and a threshold voltage ( V th ) of -2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency ( f T ) of 48 GHz and a maximum oscillation frequency ( f max ) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.

  8. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications. (interdisciplinary physics and related areas of science and technology)

  9. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jü rgen; Sun, Jian

    2014-01-01

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  10. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jurgen

    2014-03-27

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  11. Fast, low noise transimpedance preamplifier

    International Nuclear Information System (INIS)

    Parlakyan, L.K.

    1995-01-01

    A single-channel transimpedance preamplifier for fast dielectric detectors is described. The main specifications of the preamplifier are: rise time is 1,5 ns; gain is 3,5 mV/μ A (with two section- 210 mV/μ A); r.m.s input noise is 30 n A; power consumption is 22 m W. Depending on supply voltage, the parameters may vary in a wide range. 5 refs

  12. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

  13. Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

    International Nuclear Information System (INIS)

    Zhang Ying; Wang Zhigong; Xu Jian; Luo Yin

    2012-01-01

    A low noise distributed amplifier consisting of 9 gain cells is presented. The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor (PHEMT) technology from Win Semiconductor of Taiwan. A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB. A novel cascode structure is adopted to extend the output voltage and bandwidth. The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of ±1 dB in the 2–20 GHz band. The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz. The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point (IIP3), which demonstrates the excellent performance of linearity. The power consumption is 300 mW with a supply of 5 V, and the chip area is 2.36 × 1.01 mm 2 . (semiconductor integrated circuits)

  14. A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

    Science.gov (United States)

    Lockerbie, N. A.; Tokmakov, K. V.

    2014-11-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  15. A source of illumination for low-noise ‘Violin-Mode’ shadow sensors, intended for use in interferometric gravitational wave detectors

    Science.gov (United States)

    Lockerbie, N. A.; Tokmakov, K. V.; Strain, K. A.

    2014-12-01

    A low-noise source of illumination is described for shadow sensors having a displacement sensitivity of (69  ±  13) picometres (rms)/√Hz, at 500 Hz, over a measuring span of ±0.1 mm. These sensors were designed to detect ‘Violin-Mode’ resonances in the suspension fibres of the test-masses/mirrors for the Advanced LIGO (Laser Interferometer Gravitational wave Observatory) gravitational wave detectors. The source of illumination (emitter) described here used a single column of 8 × miniature near infrared LEDs (λ = 890 nm). These emitters cast the shadows of 400 μm diameter fused silica suspension fibres onto their complementary shadow-displacement detectors, located at a distance of 74 fibre diameters (29.6 mm) behind the axes of the fibres themselves. Violin-Mode vibrations of each fibre were sensed as differential ac photocurrents in the corresponding ‘split-photodiode’ detector. This paper describes the design, construction, noise analysis, and measures that were taken in the conception of the emitters, in order to produce high-contrast shadows at such distant detectors. In this way it proved possible to obtain, simultaneously, a very high transfer sensitivity to Violin-Mode vibration of the fibres, and a very low level of detection noise—close to the fundamental shot noise limit—whilst remaining within the constraints of this simple design of emitter. The shadow detector is described in an accompanying paper.

  16. A low-noise transimpedance amplifier for the detection of “Violin-Mode” resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

    International Nuclear Information System (INIS)

    Lockerbie, N. A.; Tokmakov, K. V.

    2014-01-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level “Violin-Mode” (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent “noise-gain peaking” arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes’ two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m −1 (rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm

  17. A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in Advanced Laser Interferometer Gravitational wave Observatory suspensions.

    Science.gov (United States)

    Lockerbie, N A; Tokmakov, K V

    2014-11-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  18. The ALICE experiment: $\\rm D^{+}$-meson production in heavy-ion collisions and silicon low noise sensors characterization for the ITS Upgrade.

    CERN Document Server

    AUTHOR|(CDS)2084697; Bruna, Elena

    This thesis collects my work on two aspects of the ALICE experiment at the Large Hadron Collider: the measurement of $\\rm D^{+}$-meson production in Pb-Pb collisions at $\\sqrt{s_{\\rm {NN}}}= 2.76$ TeV and the characterization of silicon low noise sensors for the Inner Tracking System Upgrade. I worked within the INFN group of Torino that it is involved in the ALICE experiment both in the physics program related to the study of heavy-flavour production and in the project of the ITS Upgrade. ALICE is one of the main experiment of the LHC and it is the only one optimized to study ultra-relativistic heavy-ion collisions. The main goal is to study the properties of the Quark Gluon Plasma (QGP), a phase of matter where quarks and gluons are deconned. Heavy quarks are a powerful tool to study such properties because they can be created only in hard scattering processes at the initial stage of the collision and, subsequently, they interact with the QGP. The measurement of charmed meson production in Pb-P...

  19. ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

    International Nuclear Information System (INIS)

    Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

    2016-01-01

    In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

  20. ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Carniti, P., E-mail: paolo.carniti@mib.infn.it [INFN, Sezione di Milano Bicocca, I-20126 Milano (Italy); Dipartimento di Fisica, Università di Milano Bicocca, I-20126 Milano (Italy); Cassina, L.; Gotti, C.; Maino, M.; Pessina, G. [INFN, Sezione di Milano Bicocca, I-20126 Milano (Italy); Dipartimento di Fisica, Università di Milano Bicocca, I-20126 Milano (Italy)

    2016-07-11

    In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

  1. ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

    Science.gov (United States)

    Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

    2016-07-01

    In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

  2. A Low-Noise, Modular, and Versatile Analog Front-End Intended for Processing In Vitro Neuronal Signals Detected by Microelectrode Arrays

    Directory of Open Access Journals (Sweden)

    Giulia Regalia

    2015-01-01

    Full Text Available The collection of good quality extracellular neuronal spikes from neuronal cultures coupled to Microelectrode Arrays (MEAs is a binding requirement to gather reliable data. Due to physical constraints, low power requirement, or the need of customizability, commercial recording platforms are not fully adequate for the development of experimental setups integrating MEA technology with other equipment needed to perform experiments under climate controlled conditions, like environmental chambers or cell culture incubators. To address this issue, we developed a custom MEA interfacing system featuring low noise, low power, and the capability to be readily integrated inside an incubator-like environment. Two stages, a preamplifier and a filter amplifier, were designed, implemented on printed circuit boards, and tested. The system is characterized by a low input-referred noise (70 dB, and signal-to-noise ratio values of neuronal recordings comparable to those obtained with the benchmark commercial MEA system. In addition, the system was successfully integrated with an environmental MEA chamber, without harming cell cultures during experiments and without being damaged by the high humidity level. The devised system is of practical value in the development of in vitro platforms to study temporally extended neuronal network dynamics by means of MEAs.

  3. Cooled Water Production System,

    Science.gov (United States)

    The invention refers to the field of air conditioning and regards an apparatus for obtaining cooled water . The purpose of the invention is to develop...such a system for obtaining cooled water which would permit the maximum use of the cooling effect of the water -cooling tower.

  4. Process fluid cooling system

    International Nuclear Information System (INIS)

    Farquhar, N.G.; Schwab, J.A.

    1977-01-01

    A system of heat exchangers is disclosed for cooling process fluids. The system is particularly applicable to cooling steam generator blowdown fluid in a nuclear plant prior to chemical purification of the fluid in which it minimizes the potential of boiling of the plant cooling water which cools the blowdown fluid

  5. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Yu-Sheng; Lee, Ching-Sung; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al 2 O 3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (I DSS : 337.6 mA mm −1  → 462.9 mA mm −1 ), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BV GD : −103.8 V → −183.5 V), unity-gain cut-off frequency (f T : 11.3 GHz → 17.7 GHz), maximum oscillation frequency (f max : 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring f T and f max of the studied MOS-HEMT (Schottky-gate HEMT) are V GS  = −2.5 (−2) V and V DS  = 7 V. The corresponding V GS and V DS biases are −2.5 (−2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C–V) hysteresis is obtained in the Al 2 O 3 -MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300–480 K are also studied. (paper)

  6. Hybrid radiator cooling system

    Science.gov (United States)

    France, David M.; Smith, David S.; Yu, Wenhua; Routbort, Jules L.

    2016-03-15

    A method and hybrid radiator-cooling apparatus for implementing enhanced radiator-cooling are provided. The hybrid radiator-cooling apparatus includes an air-side finned surface for air cooling; an elongated vertically extending surface extending outwardly from the air-side finned surface on a downstream air-side of the hybrid radiator; and a water supply for selectively providing evaporative cooling with water flow by gravity on the elongated vertically extending surface.

  7. Merging fluxgate and induction coil data to produce low-noise geomagnetic observatory data meeting the INTERMAGNET definitive 1 s data standard

    Science.gov (United States)

    Brunke, Heinz-Peter; Widmer-Schnidrig, Rudolf; Korte, Monika

    2017-11-01

    For frequencies above 30 mHz the instrument intrinsic noise level of typical fluxgate magnetometers used at geomagnetic observatories usually masks ambient magnetic field variations on magnetically quiet days. This is especially true for stations located at middle and low latitudes, where variations are generally smaller than at high latitudes. INTERMAGNET has set a minimum quality standard for definitive 1 s data. Natural field variations referred to as pulsations (Pc-1, Pc-2, Pi-1) fall in this band. Usually their intensity is so small that they rarely surpass the instrumental noise of fluxgate magnetometers. Moreover, high-quality magnetic field observations in the band 30 mHz-0.5 Hz contain interesting information, e.g., for the study of ionospheric electron interactions with electromagnetic ion cyclotron plasma waves. We propose a method to improve 1 Hz observatory data by merging data from the proven and tested fluxgate magnetometers currently in use with induction coil magnetometers into a single data stream. We show how measurements of both instruments can be combined without information loss or phase distortion. The result is a time series of the magnetic field vector components, combining the benefits of both instruments: long-term stability (fluxgate) and low noise at high frequencies (induction coil). This new data stream fits perfectly into the data management procedures of INTERMAGNET and meets the requirements defined in the definitive 1 s data standard. We describe the applied algorithm and validate the result by comparing power spectra of the fluxgate magnetometer output with the merged signal. Daily spectrograms from the Niemegk observatory show that the resulting data series reveal information at frequencies above 30 mHz that cannot be seen in raw fluxgate data.

  8. A source of illumination for low-noise ‘Violin-Mode’ shadow sensors, intended for use in interferometric gravitational wave detectors

    International Nuclear Information System (INIS)

    Lockerbie, N A; Tokmakov, K V; Strain, K A

    2014-01-01

    A low-noise source of illumination is described for shadow sensors having a displacement sensitivity of (69  ±  13) picometres (rms)/√Hz, at 500 Hz, over a measuring span of ±0.1 mm. These sensors were designed to detect ‘Violin-Mode’ resonances in the suspension fibres of the test-masses/mirrors for the Advanced LIGO (Laser Interferometer Gravitational wave Observatory) gravitational wave detectors. The source of illumination (emitter) described here used a single column of 8 × miniature near infrared LEDs (λ = 890 nm). These emitters cast the shadows of 400 μm diameter fused silica suspension fibres onto their complementary shadow-displacement detectors, located at a distance of 74 fibre diameters (29.6 mm) behind the axes of the fibres themselves. Violin-Mode vibrations of each fibre were sensed as differential ac photocurrents in the corresponding ‘split-photodiode’ detector. This paper describes the design, construction, noise analysis, and measures that were taken in the conception of the emitters, in order to produce high-contrast shadows at such distant detectors. In this way it proved possible to obtain, simultaneously, a very high transfer sensitivity to Violin-Mode vibration of the fibres, and a very low level of detection noise—close to the fundamental shot noise limit—whilst remaining within the constraints of this simple design of emitter. The shadow detector is described in an accompanying paper. (paper)

  9. A low-noise transimpedance amplifier for the detection of “Violin-Mode” resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

    Energy Technology Data Exchange (ETDEWEB)

    Lockerbie, N. A.; Tokmakov, K. V. [SUPA (Scottish Universities Physics Alliance) Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG (United Kingdom)

    2014-11-15

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level “Violin-Mode” (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent “noise-gain peaking” arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes’ two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m{sup −1}(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  10. Merging fluxgate and induction coil data to produce low-noise geomagnetic observatory data meeting the INTERMAGNET definitive 1 s data standard

    Directory of Open Access Journals (Sweden)

    H.-P. Brunke

    2017-11-01

    Full Text Available For frequencies above 30 mHz the instrument intrinsic noise level of typical fluxgate magnetometers used at geomagnetic observatories usually masks ambient magnetic field variations on magnetically quiet days. This is especially true for stations located at middle and low latitudes, where variations are generally smaller than at high latitudes. INTERMAGNET has set a minimum quality standard for definitive 1 s data. Natural field variations referred to as pulsations (Pc-1, Pc-2, Pi-1 fall in this band. Usually their intensity is so small that they rarely surpass the instrumental noise of fluxgate magnetometers. Moreover, high-quality magnetic field observations in the band 30 mHz–0.5 Hz contain interesting information, e.g., for the study of ionospheric electron interactions with electromagnetic ion cyclotron plasma waves. We propose a method to improve 1 Hz observatory data by merging data from the proven and tested fluxgate magnetometers currently in use with induction coil magnetometers into a single data stream. We show how measurements of both instruments can be combined without information loss or phase distortion. The result is a time series of the magnetic field vector components, combining the benefits of both instruments: long-term stability (fluxgate and low noise at high frequencies (induction coil. This new data stream fits perfectly into the data management procedures of INTERMAGNET and meets the requirements defined in the definitive 1 s data standard. We describe the applied algorithm and validate the result by comparing power spectra of the fluxgate magnetometer output with the merged signal. Daily spectrograms from the Niemegk observatory show that the resulting data series reveal information at frequencies above 30 mHz that cannot be seen in raw fluxgate data.

  11. Restaurant Food Cooling Practices†

    Science.gov (United States)

    BROWN, LAURA GREEN; RIPLEY, DANNY; BLADE, HENRY; REIMANN, DAVE; EVERSTINE, KAREN; NICHOLAS, DAVE; EGAN, JESSICA; KOKTAVY, NICOLE; QUILLIAM, DANIELA N.

    2017-01-01

    Improper food cooling practices are a significant cause of foodborne illness, yet little is known about restaurant food cooling practices. This study was conducted to examine food cooling practices in restaurants. Specifically, the study assesses the frequency with which restaurants meet U.S. Food and Drug Administration (FDA) recommendations aimed at reducing pathogen proliferation during food cooling. Members of the Centers for Disease Control and Prevention’s Environmental Health Specialists Network collected data on food cooling practices in 420 restaurants. The data collected indicate that many restaurants are not meeting FDA recommendations concerning cooling. Although most restaurant kitchen managers report that they have formal cooling processes (86%) and provide training to food workers on proper cooling (91%), many managers said that they do not have tested and verified cooling processes (39%), do not monitor time or temperature during cooling processes (41%), or do not calibrate thermometers used for monitoring temperatures (15%). Indeed, 86% of managers reported cooling processes that did not incorporate all FDA-recommended components. Additionally, restaurants do not always follow recommendations concerning specific cooling methods, such as refrigerating cooling food at shallow depths, ventilating cooling food, providing open-air space around the tops and sides of cooling food containers, and refraining from stacking cooling food containers on top of each other. Data from this study could be used by food safety programs and the restaurant industry to target training and intervention efforts concerning cooling practices. These efforts should focus on the most frequent poor cooling practices, as identified by this study. PMID:23212014

  12. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

    International Nuclear Information System (INIS)

    Bhattacharjee, A.; Lenka, T. R.

    2014-01-01

    We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

  13. Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

    International Nuclear Information System (INIS)

    Pu Yan; Pang Lei; Wang Liang; Chen Xiaojuan; Li Chengzhan; Liu Xinyu

    2009-01-01

    The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract R g . In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and f T and f max can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz. (semiconductor devices)

  14. Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

    International Nuclear Information System (INIS)

    Zaidi, Z H; Lee, K B; Qian, H; Jiang, S; Houston, P A; Guiney, I; Wallis, D J; Humphreys, C J

    2015-01-01

    We have demonstrated enhancement mode operation of AlInN/GaN (MIS)HEMTs on Si substrates using the fluorine treatment technique. The plasma RF power and treatment time was optimized to prevent the penetration of the fluorine into the channel region to maintain high channel conductivity and transconductance. An analysis of the threshold voltage was carried out which defined the requirement for the fluorine sheet concentration to exceed the charge at the dielectric/AlInN interface to achieve an increase in the positive threshold voltage after deposition of the dielectric. This illustrates the importance of control of both the plasma conditions and the interfacial charge for a reproducible threshold voltage. A positive threshold voltage of +3 V was achieved with a maximum drain current of 367 mA mm −1 at a forward gate bias of 10 V. (paper)

  15. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  16. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Directory of Open Access Journals (Sweden)

    Chandan Sharma

    2017-08-01

    Full Text Available This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  17. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Science.gov (United States)

    Sharma, Chandan; Laishram, Robert; Amit, Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

    2017-08-01

    This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  18. Water cooling coil

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, S; Ito, Y; Kazawa, Y

    1975-02-05

    Object: To provide a water cooling coil in a toroidal nuclear fusion device, in which coil is formed into a small-size in section so as not to increase dimensions, weight or the like of machineries including the coil. Structure: A conductor arranged as an outermost layer of a multiple-wind water cooling coil comprises a hollow conductor, which is directly cooled by fluid, and as a consequence, a solid conductor disposed interiorly thereof is cooled indirectly.

  19. The Cool Colors Project

    Science.gov (United States)

    Gov. Arnold Schwarzenegger, second from left, a sample from the Cool Colors Project, a roof product ) (Jeff Chiu - AP) more Cool Colors make the front page of The Sacramento Bee (3rd highest circulation newspaper in California) on 14 August 2006! Read the article online or as a PDF. The Cool Colors Project

  20. CT urography in the urinary bladder: To compare excretory phase images using a low noise index and a high noise index with adaptive noise reduction filter

    International Nuclear Information System (INIS)

    Takeyama, Nobuyuki; Hayashi, Takaki; Ohgiya, Yoshimitsu

    2011-01-01

    Background: Although CT urography (CTU) is widely used for the evaluation of the entire urinary tract, the most important drawback is the radiation exposure. Purpose: To evaluate the effect of a noise reduction filter (NRF) using a phantom and to quantitatively and qualitatively compare excretory phase (EP) images using a low noise index (NI) with those using a high NI and postprocessing NRF (pNRF). Material and Methods: Each NI value was defined for a slice thickness of 5 mm, and reconstructed images with a slice thickness of 1.25 mm were assessed. Sixty patients who were at high risk of developing bladder tumors (BT) were divided into two groups according to whether their EP images were obtained using an NI of 9.88 (29 patients; group A) or an NI of 20 and pNRF (31 patients; group B). The CT dose index volume (CTDI vol ) and the contrast-to-noise ratio (CNR) of the bladder with respect to the anterior pelvic fat were compared in both groups. Qualitative assessment of the urinary bladder for image noise, sharpness, streak artifacts, homogeneity, and the conspicuity of polypoid or sessile-shaped BTs with a short-axis diameter greater than 10 mm was performed using a 3-point scale. Results: The phantom study showed noise reduction of approximately 40% and 76% dose reduction between group A and group B. CTDI vol demonstrated a 73% reduction in group B (4.6 ± 1.1 mGy) compared with group A (16.9 ± 3.4 mGy). The CNR value was not significantly different (P = 0.60) between group A (16.1 ± 5.1) and group B (16.6 ± 7.6). Although group A was superior (P < 0.01) to group B with regard to image noise, other qualitative analyses did not show significant differences. Conclusion: EP images using a high NI and pNRF were quantitatively and qualitatively comparable to those using a low NI, except with regard to image noise

  1. A step-wise steerable source of illumination for low-noise "Violin-Mode" shadow sensors, intended for use in interferometric gravitational wave detectors

    Science.gov (United States)

    Lockerbie, N. A.; Tokmakov, K. V.

    2016-01-01

    A steerable low-noise source of illumination is described for shadow-sensors having a displacement sensitivity of ˜100 pm (rms)/√Hz, at 500 Hz, over a measuring span of at least ±0.5 mm. These sensors were designed to detect lateral "Violin-Mode" resonances in the highly tensioned fused-silica suspension fibres of the test-masses/mirrors for the Advanced Laser Interferometer Gravitational Wave Observatory gravitational wave detectors. The shadow sensors—one intended for each of the four fibres in a suspension—comprised a source of Near InfraRed (NIR) radiation (emitter) and a differential shadow-displacement sensor (detector), these bracketing the fibre under test. The suspension fibres themselves were approximately 600 mm long by 0.4 mm in diameter, and when illuminated from the side, they cast narrow, vertical, shadows onto their respective detectors—these being located at an effective distance of 50 fibre diameters behind the axes of the fibres themselves. The emitter described here was designed to compensate for a significant degree of mechanical drift or creep over time in the mean position of its suspension fibre. This was achieved by employing five adjacent columns of 8 × miniature NIR LEDs (Light Emitting Diodes, λ = 890 nm), with one column being activated at a time. When used in conjunction with a "reverse Galilean" telescope, the LED sources allowed the collimated beam from the emitter to be steered azimuthally in fine angular increments (0.65°), causing the fibre's shadow to move laterally, in a step-wise manner, across the plane of its facing detector. Each step in shadow position was approximately 0.23 mm in size, and this allowed the fibre's shadow to be re-centred, so as to bridge once again both elements of its photodiode detector—even if the fibre was off-centred by as much as ±0.5 mm. Re-centring allowed Violin-Mode vibrations of the fibre to be sensed once again as differential AC photocurrents, these flowing in anti-phase in the

  2. A step-wise steerable source of illumination for low-noise “Violin-Mode” shadow sensors, intended for use in interferometric gravitational wave detectors

    International Nuclear Information System (INIS)

    Lockerbie, N. A.; Tokmakov, K. V.

    2016-01-01

    A steerable low-noise source of illumination is described for shadow-sensors having a displacement sensitivity of ∼100 pm (rms)/√Hz, at 500 Hz, over a measuring span of at least ±0.5 mm. These sensors were designed to detect lateral “Violin-Mode” resonances in the highly tensioned fused-silica suspension fibres of the test-masses/mirrors for the Advanced Laser Interferometer Gravitational Wave Observatory gravitational wave detectors. The shadow sensors—one intended for each of the four fibres in a suspension—comprised a source of Near InfraRed (NIR) radiation (emitter) and a differential shadow-displacement sensor (detector), these bracketing the fibre under test. The suspension fibres themselves were approximately 600 mm long by 0.4 mm in diameter, and when illuminated from the side, they cast narrow, vertical, shadows onto their respective detectors—these being located at an effective distance of 50 fibre diameters behind the axes of the fibres themselves. The emitter described here was designed to compensate for a significant degree of mechanical drift or creep over time in the mean position of its suspension fibre. This was achieved by employing five adjacent columns of 8  × miniature NIR LEDs (Light Emitting Diodes, λ = 890 nm), with one column being activated at a time. When used in conjunction with a “reverse Galilean” telescope, the LED sources allowed the collimated beam from the emitter to be steered azimuthally in fine angular increments (0.65°), causing the fibre’s shadow to move laterally, in a step-wise manner, across the plane of its facing detector. Each step in shadow position was approximately 0.23 mm in size, and this allowed the fibre’s shadow to be re-centred, so as to bridge once again both elements of its photodiode detector—even if the fibre was off-centred by as much as ±0.5 mm. Re-centring allowed Violin-Mode vibrations of the fibre to be sensed once again as differential AC photocurrents, these flowing in

  3. A step-wise steerable source of illumination for low-noise “Violin-Mode” shadow sensors, intended for use in interferometric gravitational wave detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lockerbie, N. A.; Tokmakov, K. V. [SUPA (Scottish Universities Physics Alliance), Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG (United Kingdom)

    2016-01-15

    A steerable low-noise source of illumination is described for shadow-sensors having a displacement sensitivity of ∼100 pm (rms)/√Hz, at 500 Hz, over a measuring span of at least ±0.5 mm. These sensors were designed to detect lateral “Violin-Mode” resonances in the highly tensioned fused-silica suspension fibres of the test-masses/mirrors for the Advanced Laser Interferometer Gravitational Wave Observatory gravitational wave detectors. The shadow sensors—one intended for each of the four fibres in a suspension—comprised a source of Near InfraRed (NIR) radiation (emitter) and a differential shadow-displacement sensor (detector), these bracketing the fibre under test. The suspension fibres themselves were approximately 600 mm long by 0.4 mm in diameter, and when illuminated from the side, they cast narrow, vertical, shadows onto their respective detectors—these being located at an effective distance of 50 fibre diameters behind the axes of the fibres themselves. The emitter described here was designed to compensate for a significant degree of mechanical drift or creep over time in the mean position of its suspension fibre. This was achieved by employing five adjacent columns of 8  × miniature NIR LEDs (Light Emitting Diodes, λ = 890 nm), with one column being activated at a time. When used in conjunction with a “reverse Galilean” telescope, the LED sources allowed the collimated beam from the emitter to be steered azimuthally in fine angular increments (0.65°), causing the fibre’s shadow to move laterally, in a step-wise manner, across the plane of its facing detector. Each step in shadow position was approximately 0.23 mm in size, and this allowed the fibre’s shadow to be re-centred, so as to bridge once again both elements of its photodiode detector—even if the fibre was off-centred by as much as ±0.5 mm. Re-centring allowed Violin-Mode vibrations of the fibre to be sensed once again as differential AC photocurrents, these flowing in

  4. Cooling water distribution system

    Science.gov (United States)

    Orr, Richard

    1994-01-01

    A passive containment cooling system for a nuclear reactor containment vessel. Disclosed is a cooling water distribution system for introducing cooling water by gravity uniformly over the outer surface of a steel containment vessel using an interconnected series of radial guide elements, a plurality of circumferential collector elements and collector boxes to collect and feed the cooling water into distribution channels extending along the curved surface of the steel containment vessel. The cooling water is uniformly distributed over the curved surface by a plurality of weirs in the distribution channels.

  5. Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

    International Nuclear Information System (INIS)

    Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

    2010-01-01

    Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

  6. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

    International Nuclear Information System (INIS)

    Pongthavornkamol Tiwat; Pang Lei; Yuan Ting-Ting; Liu Xin-Yu

    2014-01-01

    A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (I ds ) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V gs = −3.5 V, V ds = 30 V with a frequency of 9.6 GHz are presented. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

    International Nuclear Information System (INIS)

    Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

    1990-01-01

    The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

  8. Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

    Science.gov (United States)

    Freeman, Jon C.

    2004-01-01

    A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

  9. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  10. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  11. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  12. Cooling tower calculations

    International Nuclear Information System (INIS)

    Simonkova, J.

    1988-01-01

    The problems are summed up of the dynamic calculation of cooling towers with forced and natural air draft. The quantities and relations are given characterizing the simultaneous exchange of momentum, heat and mass in evaporative water cooling by atmospheric air in the packings of cooling towers. The method of solution is clarified in the calculation of evaporation criteria and thermal characteristics of countercurrent and cross current cooling systems. The procedure is demonstrated of the calculation of cooling towers, and correction curves and the effect assessed of the operating mode at constant air number or constant outlet air volume flow on their course in ventilator cooling towers. In cooling towers with the natural air draft the flow unevenness is assessed of water and air relative to its effect on the resulting cooling efficiency of the towers. The calculation is demonstrated of thermal and resistance response curves and cooling curves of hydraulically unevenly loaded towers owing to the water flow rate parameter graded radially by 20% along the cross-section of the packing. Flow rate unevenness of air due to wind impact on the outlet air flow from the tower significantly affects the temperatures of cooled water in natural air draft cooling towers of a design with lower demands on aerodynamics, as early as at wind velocity of 2 m.s -1 as was demonstrated on a concrete example. (author). 11 figs., 10 refs

  13. Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

    Science.gov (United States)

    Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

    2017-08-01

    In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

  14. Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

    2016-01-01

    This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

  15. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  16. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si3N4 passivation

    International Nuclear Information System (INIS)

    Tomosh, K. N.; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P.

    2016-01-01

    The optimum mode of the in situ plasma-chemical etching of a Si 3 N 4 passivating layer in C 3 F 8 /O 2 medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si 3 N 4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si 3 N 4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si 3 N 4 than without it.

  17. Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

    International Nuclear Information System (INIS)

    Singh, Sarab Preet; Liu, Yi; Ngoo, Yi Jie; Kyaw, Lwin Min; Bera, Milan Kumar; Chor, Eng Fong; Dolmanan, S B; Tripathy, Sudhiranjan

    2015-01-01

    The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) passivation film thickness on In 0.18 Al 0.82 N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si 3 N 4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiN x film increase with increasing film thickness. With an increase in SiN x film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In 0.18 Al 0.82 /GaN/Si HEMTs are observed. An optimal thickness of SiN x is ∼100 nm and it yields a substantial increase in 2DEG density (∼30%) with a minimum sheet resistance for In 0.18 Al 0.82 N/GaN/Si heterostructures. Furthermore, we correlate the observed SiN x film thickness-dependent electrical characteristics of In 0.18 Al 0.82 /GaN/Si HEMTs with the density of the SiN x film. (paper)

  18. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.

    Science.gov (United States)

    Heo, Jun-Woo; Kim, Young-Jin; Kim, Hyun-Seok

    2014-12-01

    We report two approaches to fabricating high performance normally-off AIGaN/GaN high-electron mobility transistors (HEMTs). The fabrication techniques employed were based on recessed-metal-insulator-semiconductor (MIS) gate and recessed fluoride-based plasma treatment. They were selectively applied to the area under the gate electrode to deplete the two-dimensional electron gas (2-DEG) density. We found that the recessed gate structure was effective in shifting the threshold voltage by controlling the etching depth of gate region to reduce the AIGaN layer thickness to less than 8 nm. Likewise, the CF4 plasma treatment effectively incorporated negatively charged fluorine ions into the thin AIGaN barrier so that the threshold voltage shifted to higher positive values. In addition to the increased threshold voltage, experimental results showed a maximum drain current and a maximum transconductance of 315 mA/mm and 100 mS/mm, respectively, for the recessed-MIS gate HEMT, and 340 mA/mm and 330 mS/mm, respectively, for the fluoride-based plasma treated HEMT.

  19. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

    Science.gov (United States)

    Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, Sudhiranjan; Kumar, Mahesh

    2017-08-01

    In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ˜1270cm2/Vs, ˜2×1013 cm-2 and ˜0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  20. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

    2016-01-01

    A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

  1. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.

    2017-08-01

    The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

  2. Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Horio, Kazushige; Nakajima, Atsushi; Itagaki, Keiichi

    2009-01-01

    A two-dimensional transient analysis of field-plate GaN MESFETs and AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current–voltage curves are derived from them. How the existence of a field plate affects buffer-related drain lag, gate lag and current collapse is studied. It is shown that in both MESFET and HEMT, the drain lag is reduced by introducing a field plate because electron injection into the buffer layer is weakened by it, and the buffer-trapping effects are reduced. It is also shown that the field plate could reduce buffer-related current collapse and gate lag in the FETs. The dependence of lag phenomena and current collapse on the field-plate length and on the SiN passivation layer thickness is also studied. The work suggests that in the field-plate structures, there is an optimum thickness of the SiN layer to minimize the buffer-related current collapse and drain lag in GaN MESFETs and AlGaN/GaN HEMTs

  3. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

    Energy Technology Data Exchange (ETDEWEB)

    Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)

    2016-10-15

    The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.

  4. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111 substrate

    Directory of Open Access Journals (Sweden)

    Adarsh Nigam

    2017-08-01

    Full Text Available In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs characteristics fabricated on Si(111 substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  5. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

  6. Laser cooling of solids

    CERN Document Server

    Petrushkin, S V

    2009-01-01

    Laser cooling is an important emerging technology in such areas as the cooling of semiconductors. The book examines and suggests solutions for a range of problems in the development of miniature solid-state laser refrigerators, self-cooling solid-state lasers and optical echo-processors. It begins by looking at the basic theory of laser cooling before considering such topics as self-cooling of active elements of solid-state lasers, laser cooling of solid-state information media of optical echo-processors, and problems of cooling solid-state quantum processors. Laser Cooling of Solids is an important contribution to the development of compact laser-powered cryogenic refrigerators, both for the academic community and those in the microelectronics and other industries. Provides a timely review of this promising field of research and discusses the fundamentals and theory of laser cooling Particular attention is given to the physics of cooling processes and the mathematical description of these processes Reviews p...

  7. Emergency reactor cooling device

    International Nuclear Information System (INIS)

    Arakawa, Ken.

    1993-01-01

    An emergency nuclear reactor cooling device comprises a water reservoir, emergency core cooling water pipelines having one end connected to a water feeding sparger, fire extinguishing facility pipelines, cooling water pressurizing pumps, a diesel driving machine for driving the pumps and a battery. In a water reservoir, cooling water is stored by an amount required for cooling the reactor upon emergency and for fire extinguishing, and fire extinguishing facility pipelines connecting the water reservoir and the fire extinguishing facility are in communication with the emergency core cooling water pipelines connected to the water feeding sparger by system connection pipelines. Pumps are operated by a diesel power generator to introduce cooling water from the reservoir to the emergency core cooling water pipelines. Then, even in a case where AC electric power source is entirely lost and the emergency core cooling system can not be used, the diesel driving machine is operated using an exclusive battery, thereby enabling to inject cooling water from the water reservoir to a reactor pressure vessel and a reactor container by the diesel drive pump. (N.H.)

  8. Radiant Floor Cooling Systems

    DEFF Research Database (Denmark)

    Olesen, Bjarne W.

    2008-01-01

    In many countries, hydronic radiant floor systems are widely used for heating all types of buildings such as residential, churches, gymnasiums, hospitals, hangars, storage buildings, industrial buildings, and smaller offices. However, few systems are used for cooling.This article describes a floor...... cooling system that includes such considerations as thermal comfort of the occupants, which design parameters will influence the cooling capacity and how the system should be controlled. Examples of applications are presented....

  9. The cooling of particle beams

    International Nuclear Information System (INIS)

    Sessler, A.M.

    1994-10-01

    A review is given of the various methods which can be employed for cooling particle beams. These methods include radiation damping, stimulated radiation damping, ionization cooling, stochastic cooling, electron cooling, laser cooling, and laser cooling with beam coupling. Laser Cooling has provided beams of the lowest temperatures, namely 1 mK, but only for ions and only for the longitudinal temperature. Recent theoretical work has suggested how laser cooling, with the coupling of beam motion, can be used to reduce the ion beam temperature in all three directions. The majority of this paper is devoted to describing laser cooling and laser cooling with beam coupling

  10. Study of low noise preamplifier systems for use with room temperature mercuric iodide (HgI2) x-ray detectors

    International Nuclear Information System (INIS)

    Iwanczyk, J.S.; Dabrowski, A.J.; Huth, G.C.; Del Duca, A.; Schenpple, W.

    1980-01-01

    An analysis of different preamplification systems for use with room temperature mercuric iodide x-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution of 295 eV (FWHM) for Fe-55 source (5.9 keV) and 225 eV (FWHM) for the pulser have been obtained with both the detector and the input FET at room temperature using the pulsed-light feedback preamplifier. It has been shown that cooling the input FET using a small Peltier element allows the energy resolution to be improved up to 25%

  11. Multiscale Modelling of Electronic and Thermal Transport : Thermoelectrics, Turbostratic 2D Materials and Diamond/c-BN HEMT

    Science.gov (United States)

    Narendra, Namita

    Multiscale modelling has become necessary with the advent of low dimensional devices as well as use of heterostructures which necessitates atomistic treatment of the interfaces. Multiscale methodology is able to capture the quantum mechanical atomistic details while enabling the simulation of micro-scale structures at the same time. In this thesis, multiscale modelling has been applied to study transport in thermoelectrics, turbostratic 2D MoS2/WS 2 heterostructure and diamond/c-BN high mobility electron transistor (HEMT). The possibility of enhanced thermoelectric properties through nanostructuring is investigated theoretically in a p-type Bi2Te3/Sb 2Te3 heterostructure. A multi-scale modeling approach is adopted to account for the atomistic characteristics of the interface as well as the carrier/phonon transport properties in the larger scales. The calculations clearly illustrate the desired impact of carrier energy filtering at the potential barrier by locally boosting the power factor over a sizable distance in the well region. Further, the phonon transport analysis illustrates a considerable reduction in the thermal conductivity at the heterointerface. Both effects are expected to provide an effective means to engineer higher zT in this material system. Next, power factor enhancement through resonant doping is explored in Bi2Te3 based on a detailed first-principles study. Of the dopant atoms investigated, it is found that the formation of resonant states may be achieved with In, Po and Na, leading potentially to significant increase in the thermoelectric efficiency at room temperature. While doping with Po forms twin resonant state peaks in the valence and conduction bands, the incorporation of Na or In results in the resonant states close to the valence band edge. Further analysis reveals the origin of these resonant states. Transport calculations are also carried out to estimate the anticipated level of enhancement. Next, in-plane and cross-plane transport

  12. Turbine airfoil cooling system with cooling systems using high and low pressure cooling fluids

    Science.gov (United States)

    Marsh, Jan H.; Messmann, Stephen John; Scribner, Carmen Andrew

    2017-10-25

    A turbine airfoil cooling system including a low pressure cooling system and a high pressure cooling system for a turbine airfoil of a gas turbine engine is disclosed. In at least one embodiment, the low pressure cooling system may be an ambient air cooling system, and the high pressure cooling system may be a compressor bleed air cooling system. In at least one embodiment, the compressor bleed air cooling system in communication with a high pressure subsystem that may be a snubber cooling system positioned within a snubber. A delivery system including a movable air supply tube may be used to separate the low and high pressure cooling subsystems. The delivery system may enable high pressure cooling air to be passed to the snubber cooling system separate from low pressure cooling fluid supplied by the low pressure cooling system to other portions of the turbine airfoil cooling system.

  13. Power electronics cooling apparatus

    Science.gov (United States)

    Sanger, Philip Albert; Lindberg, Frank A.; Garcen, Walter

    2000-01-01

    A semiconductor cooling arrangement wherein a semiconductor is affixed to a thermally and electrically conducting carrier such as by brazing. The coefficient of thermal expansion of the semiconductor and carrier are closely matched to one another so that during operation they will not be overstressed mechanically due to thermal cycling. Electrical connection is made to the semiconductor and carrier, and a porous metal heat exchanger is thermally connected to the carrier. The heat exchanger is positioned within an electrically insulating cooling assembly having cooling oil flowing therethrough. The arrangement is particularly well adapted for the cooling of high power switching elements in a power bridge.

  14. Semioptimal practicable algorithmic cooling

    International Nuclear Information System (INIS)

    Elias, Yuval; Mor, Tal; Weinstein, Yossi

    2011-01-01

    Algorithmic cooling (AC) of spins applies entropy manipulation algorithms in open spin systems in order to cool spins far beyond Shannon's entropy bound. Algorithmic cooling of nuclear spins was demonstrated experimentally and may contribute to nuclear magnetic resonance spectroscopy. Several cooling algorithms were suggested in recent years, including practicable algorithmic cooling (PAC) and exhaustive AC. Practicable algorithms have simple implementations, yet their level of cooling is far from optimal; exhaustive algorithms, on the other hand, cool much better, and some even reach (asymptotically) an optimal level of cooling, but they are not practicable. We introduce here semioptimal practicable AC (SOPAC), wherein a few cycles (typically two to six) are performed at each recursive level. Two classes of SOPAC algorithms are proposed and analyzed. Both attain cooling levels significantly better than PAC and are much more efficient than the exhaustive algorithms. These algorithms are shown to bridge the gap between PAC and exhaustive AC. In addition, we calculated the number of spins required by SOPAC in order to purify qubits for quantum computation. As few as 12 and 7 spins are required (in an ideal scenario) to yield a mildly pure spin (60% polarized) from initial polarizations of 1% and 10%, respectively. In the latter case, about five more spins are sufficient to produce a highly pure spin (99.99% polarized), which could be relevant for fault-tolerant quantum computing.

  15. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy; Um sistema de modulos NIM conjugados com entrada opcional por amplificador pHEMT para espectroscopia beta e gama

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Barbara; Lüdke, Everton, E-mail: barbarakonradmev@gmail.com, E-mail: eludke@smail.ufsm.br [Universidade Federal de Santa Maria (LAE/UFSM), RS (Brazil). Lab. de Astrofisica e Eletronica

    2014-07-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles.

  16. Cooling of electronic equipment

    DEFF Research Database (Denmark)

    A. Kristensen, Anders Schmidt

    2003-01-01

    Cooling of electronic equipment is studied. The design size of electronic equipment decrease causing the thermal density to increase. This affect the cooling which can cause for example failures of critical components due to overheating or thermal induced stresses. Initially a pin fin heat sink...

  17. Solar absorption cooling

    NARCIS (Netherlands)

    Kim, D.S.

    2007-01-01

    As the world concerns more and more on global climate changes and depleting energy resources, solar cooling technology receives increasing interests from the public as an environment-friendly and sustainable alternative. However, making a competitive solar cooling machine for the market still

  18. Gas-cooled reactors

    International Nuclear Information System (INIS)

    Vakilian, M.

    1977-05-01

    The present study is the second part of a general survey of Gas Cooled Reactors (GCRs). In this part, the course of development, overall performance and present development status of High Temperature Gas Cooled Reactors (HTCRs) and advances of HTGR systems are reviewed. (author)

  19. Coherent electron cooling

    Energy Technology Data Exchange (ETDEWEB)

    Litvinenko,V.

    2009-05-04

    Cooling intense high-energy hadron beams remains a major challenge in modern accelerator physics. Synchrotron radiation is still too feeble, while the efficiency of two other cooling methods, stochastic and electron, falls rapidly either at high bunch intensities (i.e. stochastic of protons) or at high energies (e-cooling). In this talk a specific scheme of a unique cooling technique, Coherent Electron Cooling, will be discussed. The idea of coherent electron cooling using electron beam instabilities was suggested by Derbenev in the early 1980s, but the scheme presented in this talk, with cooling times under an hour for 7 TeV protons in the LHC, would be possible only with present-day accelerator technology. This talk will discuss the principles and the main limitations of the Coherent Electron Cooling process. The talk will describe the main system components, based on a high-gain free electron laser driven by an energy recovery linac, and will present some numerical examples for ions and protons in RHIC and the LHC and for electron-hadron options for these colliders. BNL plans a demonstration of the idea in the near future.

  20. The final cool down

    CERN Multimedia

    Thursday 29th May, the cool-down of the final sector (sector 4-5) of LHC has begun, one week after the start of the cool-down of sector 1-2. It will take five weeks for the sectors to be cooled from room temperature to 5 K and a further two weeks to complete the cool down to 1.9 K and the commissioning of cryogenic instrumentation, as well as to fine tune the cryogenic plants and the cooling loops of cryostats.Nearly a year and half has passed since sector 7-8 was cooled for the first time in January 2007. For Laurent Tavian, AT/CRG Group Leader, reaching the final phase of the cool down is an important milestone, confirming the basic design of the cryogenic system and the ability to operate complete sectors. “All the sectors have to operate at the same time otherwise we cannot inject the beam into the machine. The stability and reliability of the cryogenic system and its utilities are now very important. That will be the new challenge for the coming months,” he explains. The status of the cool down of ...

  1. Reactor core cooling device

    International Nuclear Information System (INIS)

    Kobayashi, Masahiro.

    1986-01-01

    Purpose: To safely and effectively cool down the reactor core after it has been shut down but is still hot due to after-heat. Constitution: Since the coolant extraction nozzle is situated at a location higher than the coolant injection nozzle, the coolant sprayed from the nozzle, is free from sucking immediately from the extraction nozzle and is therefore used effectively to cool the reactor core. As all the portions from the top to the bottom of the reactor are cooled simultaneously, the efficiency of the reactor cooling process is increased. Since the coolant extraction nozzle can be installed at a point considerably higher than the coolant injection nozzle, the distance from the coolant surface to the point of the coolant extraction nozzle can be made large, preventing cavitation near the coolant extraction nozzle. Therefore, without increasing the capacity of the heat exchanger, the reactor can be cooled down after a shutdown safely and efficiently. (Kawakami, Y.)

  2. Stochastic cooling at Fermilab

    International Nuclear Information System (INIS)

    Marriner, J.

    1986-08-01

    The topics discussed are the stochastic cooling systems in use at Fermilab and some of the techniques that have been employed to meet the particular requirements of the anti-proton source. Stochastic cooling at Fermilab became of paramount importance about 5 years ago when the anti-proton source group at Fermilab abandoned the electron cooling ring in favor of a high flux anti-proton source which relied solely on stochastic cooling to achieve the phase space densities necessary for colliding proton and anti-proton beams. The Fermilab systems have constituted a substantial advance in the techniques of cooling including: large pickup arrays operating at microwave frequencies, extensive use of cryogenic techniques to reduce thermal noise, super-conducting notch filters, and the development of tools for controlling and for accurately phasing the system

  3. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy

    International Nuclear Information System (INIS)

    Konrad, Barbara; Lüdke, Everton

    2014-01-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles

  4. Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    International Nuclear Information System (INIS)

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-01

    The specific features of how nitride HEMT heterostructures are produced by NH 3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10 8 −1 × 10 9 cm −2 . The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH 3 -MBE with an extremely high ammonia flux are demonstrated

  5. Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    YongHe Chen

    2015-09-01

    Full Text Available By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT at gate bias beyond threshold voltage is studied. It is revealed that reverse current consists of area-related and perimeter-related current. An analytical model of electric field calculation is proposed to obtain the average electric field around the gate edge at high revers bias and estimate the effective range of edge leakage current. When the reverse bias increases, the increment of electric field is around the gate edge of a distance of ΔL, and perimeter-related gate edge current keeps increasing. By using the calculated electric field and the temperature-dependent current-voltage measurements, the edge gate leakage current mechanism is found to be Fowler-Nordheim tunneling at gate bias bellows -15V caused by the lateral extended depletion region induced barrier thinning. Effective range of edge current of Schottky diodes is about hundred to several hundred nano-meters, and is different in different shapes of Schottky diodes.

  6. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

    Science.gov (United States)

    Kumar, Sandeep; Remesh, Nayana; Dolmanan, S. B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N.

    2017-11-01

    We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200 mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +∼2.5 V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the presence of slow traps at InAlN/GaN interface. The conductance dispersion indicated the presence of acceptor traps of the order of ∼4 × 1012 to 7 × 1013 cm-2 eV-1 with a time constant of ∼10 to 350 μs at the InAlN/GaN interface. Trap density at the Al2O3/InAlN was found to be in similar range but with a time constant of ∼2 μs. The presence of high density of traps at InAlN/GaN interface is attributed to the unavoidable growth interruption before the start of InAlN growth.

  7. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure for improving DC and RF characteristics

    Science.gov (United States)

    Razavi, S. M.; Zahiri, S. H.; Hosseini, S. E.

    2017-04-01

    In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) with recessed insulator and barrier is reported. In the proposed structure, insulator is recessed into the barrier at the drain side and barrier is recessed into the buffer layer at the source side. We study important device characteristics such as electric field, breakdown voltage, drain current, maximum output power density, gate-drain capacitance, short channel effects and DC transconductance using two-dimensional and two-carrier device simulator. Recessed insulator in the drain side of the proposed structure reduces maximum electric field in the channel and therefore increases the breakdown voltage and maximum output power density compared to the conventional counterpart. Also, gate-drain capacitance value in the proposed structure is less than that of the conventional structure. Overall, the proposed structure reduces short channel effects. Because of the recessed regions at both the source and the drain sides, the average barrier thickness of the proposed structure is not changed. Thus, the drain current of the proposed structure is almost equivalent to that of the conventional transistor. In this work, length ( L r) and thickness ( T r) of the recessed region of the barrier at the source side are the same as those of the insulator at the drain side.

  8. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  9. Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

    Science.gov (United States)

    Ahmed, Nadim; Dutta, Aloke K.

    2017-06-01

    In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be the primary source of 2DEG carriers. To the best of our knowledge, this is a completely new contribution of this work. The electric field in the AlGaN layer is calculated using this model, which is further used to model the gate leakage current under reverse bias. We have modified the existing TTT (Thermionic Trap-Assisted Tunneling) current model, taking into account the effect of both metal/AlGaN interface traps as well as AlGaN bulk traps. The gate current under forward bias is also modeled using the existing thermionic emission model, approximating it by its Taylor series expansion. To take into account the effect of non-zero drain-source bias (VDS), an empirical fitting parameter is introduced in order to model the channel voltage in terms of VDS. The results of our models have been compared with the experimental data reported in the literature for three different devices, and the match is found to be excellent for both forward and reverse bias as well as for zero and non-zero VDS.

  10. Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

    International Nuclear Information System (INIS)

    Mi Min-Han; Zhang Kai; Zhao Sheng-Lei; Wang Chong; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue

    2015-01-01

    The influence of an N 2 O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (g m ) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (D T ) and time constant (τ T ) of the N 2 O-treated device are smaller than those of a non-treated device. The results indicate that the N 2 O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device. (paper)

  11. Cooled-Spool Piston Compressor

    Science.gov (United States)

    Morris, Brian G.

    1994-01-01

    Proposed cooled-spool piston compressor driven by hydraulic power and features internal cooling of piston by flowing hydraulic fluid to limit temperature of compressed gas. Provides sufficient cooling for higher compression ratios or reactive gases. Unlike conventional piston compressors, all parts of compressed gas lie at all times within relatively short distance of cooled surface so that gas cooled more effectively.

  12. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  13. Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

    International Nuclear Information System (INIS)

    Huang Jie; Li Ming; Tang Chak-Wah; Lau Kei-May

    2014-01-01

    High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal—organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g m ) of 247 mS/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f T and f MAX is 50% and 52% higher, respectively. (interdisciplinary physics and related areas of science and technology)

  14. High-performance CPW MMIC LNA using GaAs-based metamorphic HEMTs for 94-GHz applications

    International Nuclear Information System (INIS)

    Ryu, Keun-Kwan; Kim, Sung-Chan; An, Dan; Rhee, Jin-Koo

    2010-01-01

    In this paper, we report on a high-performance low-noise amplifier (LNA) using metamorphic high-electron-mobility transistor (MHEMT) technology for 94-GHz applications. The 100 nm x 60 μm MHEMT devices for the coplanar MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm and an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency (f T ) and the maximum oscillation frequency (f max ) were 195 GHz and 305 GHz, respectively. Based on this MHEMT technology, coplanar 94-GHz MMIC LNAs were realized, achieving a small signal gain of more than 13 dB between 90 and 100 GHz and a small signal gain of 14.8 dB and a noise figure of 4.7 dB at 94 GHz.

  15. Second sector cool down

    CERN Multimedia

    2007-01-01

    At the beginning of July, cool-down is starting in the second LHC sector, sector 4-5. The cool down of sector 4-5 may occasionally generate mist at Point 4, like that produced last January (photo) during the cool-down of sector 7-8.Things are getting colder in the LHC. Sector 7-8 has been kept at 1.9 K for three weeks with excellent stability (see Bulletin No. 16-17 of 16 April 2007). The electrical tests in this sector have got opt to a successful start. At the beginning of July the cryogenic teams started to cool a second sector, sector 4-5. At Point 4 in Echenevex, where one of the LHC’s cryogenic plants is located, preparations for the first phase of the cool-down are underway. During this phase, the sector will first be cooled to 80 K (-193°C), the temperature of liquid nitrogen. As for the first sector, 1200 tonnes of liquid nitrogen will be used for the cool-down. In fact, the nitrogen circulates only at the surface in the ...

  16. Dry well cooling device

    International Nuclear Information System (INIS)

    Suzuki, Hiroyuki.

    1997-01-01

    A plurality of blowing ports with introduction units are disposed to a plurality of ducts in a dry well, and a cooling unit comprising a cooler, a blower and an isolating valve is disposed outside of the dry well. Cooling air and the atmosphere in the dry well are mixed to form a cooling gas and blown into the dry well to control the temperature. Since the cooling unit is disposed outside of the dry well, the maintenance of the cooling unit can be performed even during the plant operation. In addition, since dampers opened/closed depending on the temperature of the atmosphere are disposed to the introduction units for controlling the temperature of the cooling gas, the temperature of the atmosphere in the dry well can be set to a predetermined level rapidly. Since an axial flow blower is used as the blower of the cooling unit, it can be contained in a ventilation cylinder. Then, the atmosphere in the dry well flowing in the ventilation cylinder can be prevented from leaking to the outside. (N.H.)

  17. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

    Science.gov (United States)

    Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

    2017-06-01

    In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

  18. Cooling towers: a bibliography

    International Nuclear Information System (INIS)

    Whitson, M.O.

    1981-02-01

    This bibliography cites 300 selected references containing information on various aspects of large cooling tower technology, including design, construction, operation, performance, economics, and environmental effects. The towers considered include natural-draft and mechanical-draft types employing wet, dry, or combination wet-dry cooling. A few references deal with alternative cooling methods, principally ponds or spray canals. The citations were compiled for the DOE Energy Information Data Base (EDB) covering the period January to December 1980. The references are to reports from the Department of Energy and its contractors, reports from other government or private organizations, and journal articles, books, conference papers, and monographs from US originators

  19. History of nuclear cooling

    International Nuclear Information System (INIS)

    Kuerti, M.

    1998-01-01

    The historical development of producing extreme low temperatures by magnetic techniques is overviewed. With electron spin methods, temperatures down to 1 mK can be achieved. With nuclear spins theoretically 10 -9 K can be produced. The idea of cooling with nuclear demagnetization is not new, it is a logical extension of the concept of electron cooling. Using nuclear demagnetization experiment with 3 T water cooled solenoids 3 mK could be produced. The cold record is held by Olli Lounasmaa in Helsinki with temperatures below 10 -9 K. (R.P.)

  20. Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

    Directory of Open Access Journals (Sweden)

    Liwei Jin

    2013-01-01

    Full Text Available This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.

  1. Microbial analysis of meatballs cooled with vacuum and conventional cooling.

    Science.gov (United States)

    Ozturk, Hande Mutlu; Ozturk, Harun Kemal; Koçar, Gunnur

    2017-08-01

    Vacuum cooling is a rapid evaporative cooling technique and can be used for pre-cooling of leafy vegetables, mushroom, bakery, fishery, sauces, cooked food, meat and particulate foods. The aim of this study was to apply the vacuum cooling and the conventional cooling techniques for the cooling of the meatball and to show the vacuum pressure effect on the cooling time, the temperature decrease and microbial growth rate. The results of the vacuum cooling and the conventional cooling (cooling in the refrigerator) were compared with each other for different temperatures. The study shows that the conventional cooling was much slower than the vacuum cooling. Moreover, the microbial growth rate of the vacuum cooling was extremely low compared with the conventional cooling. Thus, the lowest microbial growth occurred at 0.7 kPa and the highest microbial growth was observed at 1.5 kPa for the vacuum cooling. The mass loss ratio for the conventional cooling and vacuum cooling was about 5 and 9% respectively.

  2. Gas cooled reactors

    International Nuclear Information System (INIS)

    Kojima, Masayuki.

    1985-01-01

    Purpose: To enable direct cooling of reactor cores thereby improving the cooling efficiency upon accidents. Constitution: A plurality sets of heat exchange pipe groups are disposed around the reactor core, which are connected by way of communication pipes with a feedwater recycling device comprising gas/liquid separation device, recycling pump, feedwater pump and emergency water tank. Upon occurrence of loss of primary coolants accidents, the heat exchange pipe groups directly absorb the heat from the reactor core through radiation and convection. Although the water in the heat exchange pipe groups are boiled to evaporate if the forcive circulation is interrupted by the loss of electric power source, water in the emergency tank is supplied due to the head to the heat exchange pipe groups to continue the cooling. Furthermore, since the heat exchange pipe groups surround the entire circumference of the reactor core, cooling is carried out uniformly without resulting deformation or stresses due to the thermal imbalance. (Sekiya, K.)

  3. Warm and Cool Dinosaurs.

    Science.gov (United States)

    Mannlein, Sally

    2001-01-01

    Presents an art activity in which first grade students draw dinosaurs in order to learn about the concept of warm and cool colors. Explains how the activity also helped the students learn about the concept of distance when drawing. (CMK)

  4. Cooling of wood briquettes

    Directory of Open Access Journals (Sweden)

    Adžić Miroljub M.

    2013-01-01

    Full Text Available This paper is concerned with the experimental research of surface temperature of wood briquettes during cooling phase along the cooling line. The cooling phase is an important part of the briquette production technology. It should be performed with care, otherwise the quality of briquettes could deteriorate and possible changes of combustion characteristics of briquettes could happen. The briquette surface temperature was measured with an IR camera and a surface temperature probe at 42 sections. It was found that the temperature of briquette surface dropped from 68 to 34°C after 7 minutes spent at the cooling line. The temperature at the center of briquette, during the 6 hour storage, decreased to 38°C.

  5. Stacking with stochastic cooling

    Energy Technology Data Exchange (ETDEWEB)

    Caspers, Fritz E-mail: Fritz.Caspers@cern.ch; Moehl, Dieter

    2004-10-11

    Accumulation of large stacks of antiprotons or ions with the aid of stochastic cooling is more delicate than cooling a constant intensity beam. Basically the difficulty stems from the fact that the optimized gain and the cooling rate are inversely proportional to the number of particles 'seen' by the cooling system. Therefore, to maintain fast stacking, the newly injected batch has to be strongly 'protected' from the Schottky noise of the stack. Vice versa the stack has to be efficiently 'shielded' against the high gain cooling system for the injected beam. In the antiproton accumulators with stacking ratios up to 10{sup 5} the problem is solved by radial separation of the injection and the stack orbits in a region of large dispersion. An array of several tapered cooling systems with a matched gain profile provides a continuous particle flux towards the high-density stack core. Shielding of the different systems from each other is obtained both through the spatial separation and via the revolution frequencies (filters). In the 'old AA', where the antiproton collection and stacking was done in one single ring, the injected beam was further shielded during cooling by means of a movable shutter. The complexity of these systems is very high. For more modest stacking ratios, one might use azimuthal rather than radial separation of stack and injected beam. Schematically half of the circumference would be used to accept and cool new beam and the remainder to house the stack. Fast gating is then required between the high gain cooling of the injected beam and the low gain stack cooling. RF-gymnastics are used to merge the pre-cooled batch with the stack, to re-create free space for the next injection, and to capture the new batch. This scheme is less demanding for the storage ring lattice, but at the expense of some reduction in stacking rate. The talk reviews the 'radial' separation schemes and also gives some

  6. Laser cooling of solids

    Energy Technology Data Exchange (ETDEWEB)

    Epstein, Richard I [Los Alamos National Laboratory; Sheik-bahae, Mansoor [UNM

    2008-01-01

    We present an overview of solid-state optical refrigeration also known as laser cooling in solids by fluorescence upconversion. The idea of cooling a solid-state optical material by simply shining a laser beam onto it may sound counter intuitive but is rapidly becoming a promising technology for future cryocooler. We chart the evolution of this science in rare-earth doped solids and semiconductors.

  7. Cooling with Superfluid Helium

    Energy Technology Data Exchange (ETDEWEB)

    Lebrun, P; Tavian, L [European Organization for Nuclear Research, Geneva (Switzerland)

    2014-07-01

    The technical properties of helium II (‘superfluid’ helium) are presented in view of its applications to the cooling of superconducting devices, particularly in particle accelerators. Cooling schemes are discussed in terms of heat transfer performance and limitations. Large-capacity refrigeration techniques below 2 K are reviewed, with regard to thermodynamic cycles as well as process machinery. Examples drawn from existing or planned projects illustrate the presentation. Keywords: superfluid helium, cryogenics.

  8. Simulation study of HEMT structures with HfO{sub 2} cap layer for mitigating inverse piezoelectric effect related device failures

    Energy Technology Data Exchange (ETDEWEB)

    Nagulapally, Deepthi; Joshi, Ravi P., E-mail: rjoshi@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 (United States); Pradhan, Aswini [Department of Engineering and Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

    2015-01-15

    The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO{sub 2} “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  9. Investigation of In0.7Ga0.3As/In0.7Al0.3As metamorphic HEMT- heterostructures by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Romanovskiy, D S; LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Tarasov, S A; Galiev, G B; Pushkarev, S S

    2014-01-01

    Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT- (MHEMT-) heterostructures with the same active regions and different buffer layer designs grown by solid-source molecular beam epitaxy. The indium mole fraction in InAlAs/InGaAs/InAlAs single quantum well (QW) is 0.7. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence and photoreflectance spectral lines and their thermal behaviour are critically discussed

  10. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  11. Comparing Social Stories™ to Cool versus Not Cool

    Science.gov (United States)

    Leaf, Justin B.; Mitchell, Erin; Townley-Cochran, Donna; McEachin, John; Taubman, Mitchell; Leaf, Ronald

    2016-01-01

    In this study we compared the cool versus not cool procedure to Social Stories™ for teaching various social behaviors to one individual diagnosed with autism spectrum disorder. The researchers randomly assigned three social skills to the cool versus not cool procedure and three social skills to the Social Stories™ procedure. Naturalistic probes…

  12. Laser cooling of neutral atoms

    International Nuclear Information System (INIS)

    1993-01-01

    A qualitative description of laser cooling of neutral atoms is given. Two of the most important mechanisms utilized in laser cooling, the so-called Doppler Cooling and Sisyphus Cooling, are reviewed. The minimum temperature reached by the atoms is derived using simple arguments. (Author) 7 refs

  13. Technology of power plant cooling

    International Nuclear Information System (INIS)

    Maulbetsch, J.S.; Zeren, R.W.

    1976-01-01

    The following topics are discussed: the thermodynamics of power generation and the need for cooling water; the technical, economic, and legislative constraints within which the cooling problem must be solved; alternate cooling methods currently available or under development; the water treatment requirements of cooling systems; and some alternatives for modifying the physical impact on aquatic systems

  14. Meltdown reactor core cooling facility

    International Nuclear Information System (INIS)

    Matsuoka, Tsuyoshi.

    1992-01-01

    The meltdown reactor core cooling facility comprises a meltdown reactor core cooling tank, a cooling water storage tank situates at a position higher than the meltdown reactor core cooling tank, an upper pipeline connecting the upper portions of the both of the tanks and a lower pipeline connecting the lower portions of them. Upon occurrence of reactor core meltdown, a high temperature meltdown reactor core is dropped on the cooling tank to partially melt the tank and form a hole, from which cooling water is flown out. Since the water source of the cooling water is the cooling water storage tank, a great amount of cooling water is further dropped and supplied and the reactor core is submerged and cooled by natural convection for a long period of time. Further, when the lump of the meltdown reactor core is small and the perforated hole of the meltdown reactor cooling tank is small, cooling water is boiled by the high temperature lump intruding into the meltdown reactor core cooling tank and blown out from the upper pipeline to the cooling water storage tank to supply cooling water from the lower pipeline to the meltdown reactor core cooling tank. Since it is constituted only with simple static facilities, the facility can be simplified to attain improvement of reliability. (N.H.)

  15. Cool WISPs for stellar cooling excesses

    Energy Technology Data Exchange (ETDEWEB)

    Giannotti, Maurizio [Physical Sciences, Barry University, 11300 NE 2nd Avenue, Miami Shores, FL 33161 (United States); Irastorza, Igor; Redondo, Javier [Departamento de Física Teórica, Universidad de Zaragoza, Pedro Cerbuna 12, E-50009, Zaragoza, España (Spain); Ringwald, Andreas, E-mail: mgiannotti@barry.edu, E-mail: igor.irastorza@cern.ch, E-mail: jredondo@unizar.es, E-mail: andreas.ringwald@desy.de [Theory group, Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg (Germany)

    2016-05-01

    Several stellar systems (white dwarfs, red giants, horizontal branch stars and possibly the neutron star in the supernova remnant Cassiopeia A) show a mild preference for a non-standard cooling mechanism when compared with theoretical models. This exotic cooling could be provided by Weakly Interacting Slim Particles (WISPs), produced in the hot cores and abandoning the star unimpeded, contributing directly to the energy loss. Taken individually, these excesses do not show a strong statistical weight. However, if one mechanism could consistently explain several of them, the hint could be significant. We analyze the hints in terms of neutrino anomalous magnetic moments, minicharged particles, hidden photons and axion-like particles (ALPs). Among them, the ALP or a massless HP represent the best solution. Interestingly, the hinted ALP parameter space is accessible to the next generation proposed ALP searches, such as ALPS II and IAXO and the massless HP requires a multi TeV energy scale of new physics that might be accessible at the LHC.

  16. Cool WISPs for stellar cooling excesses

    International Nuclear Information System (INIS)

    Giannotti, Maurizio; Irastorza, Igor; Redondo, Javier; Ringwald, Andreas

    2016-01-01

    Several stellar systems (white dwarfs, red giants, horizontal branch stars and possibly the neutron star in the supernova remnant Cassiopeia A) show a mild preference for a non-standard cooling mechanism when compared with theoretical models. This exotic cooling could be provided by Weakly Interacting Slim Particles (WISPs), produced in the hot cores and abandoning the star unimpeded, contributing directly to the energy loss. Taken individually, these excesses do not show a strong statistical weight. However, if one mechanism could consistently explain several of them, the hint could be significant. We analyze the hints in terms of neutrino anomalous magnetic moments, minicharged particles, hidden photons and axion-like particles (ALPs). Among them, the ALP or a massless HP represent the best solution. Interestingly, the hinted ALP parameter space is accessible to the next generation proposed ALP searches, such as ALPS II and IAXO and the massless HP requires a multi TeV energy scale of new physics that might be accessible at the LHC.

  17. Gas-cooled reactors

    International Nuclear Information System (INIS)

    Schulten, R.; Trauger, D.B.

    1976-01-01

    Experience to date with operation of high-temperature gas-cooled reactors has been quite favorable. Despite problems in completion of construction and startup, three high-temperature gas-cooled reactor (HTGR) units have operated well. The Windscale Advanced Gas-Cooled Reactor (AGR) in the United Kingdom has had an excellent operating history, and initial operation of commercial AGRs shows them to be satisfactory. The latter reactors provide direct experience in scale-up from the Windscale experiment to fullscale commercial units. The Colorado Fort St. Vrain 330-MWe prototype helium-cooled HTGR is now in the approach-to-power phase while the 300-MWe Pebble Bed THTR prototype in the Federal Republic of Germany is scheduled for completion of construction by late 1978. THTR will be the first nuclear power plant which uses a dry cooling tower. Fuel reprocessing and refabrication have been developed in the laboratory and are now entering a pilot-plant scale development. Several commercial HTGR power station orders were placed in the U.S. prior to 1975 with similar plans for stations in the FRG. However, the combined effects of inflation, reduced electric power demand, regulatory uncertainties, and pricing problems led to cancellation of the 12 reactors which were in various stages of planning, design, and licensing

  18. Gas cooled leads

    International Nuclear Information System (INIS)

    Shutt, R.P.; Rehak, M.L.; Hornik, K.E.

    1993-01-01

    The intent of this paper is to cover as completely as possible and in sufficient detail the topics relevant to lead design. The first part identifies the problems associated with lead design, states the mathematical formulation, and shows the results of numerical and analytical solutions. The second part presents the results of a parametric study whose object is to determine the best choice for cooling method, material, and geometry. These findings axe applied in a third part to the design of high-current leads whose end temperatures are determined from the surrounding equipment. It is found that cooling method or improved heat transfer are not critical once good heat exchange is established. The range 5 5 but extends over a large of values. Mass flow needed to prevent thermal runaway varies linearly with current above a given threshold. Below that value, the mass flow is constant with current. Transient analysis shows no evidence of hysteresis. If cooling is interrupted, the mass flow needed to restore the lead to its initially cooled state grows exponentially with the time that the lead was left without cooling

  19. Emergency core cooling system

    International Nuclear Information System (INIS)

    Arai, Kenji; Oikawa, Hirohide.

    1990-01-01

    The device according to this invention can ensure cooling water required for emerency core cooling upon emergence such as abnormally, for example, loss of coolant accident, without using dynamic equipments such as a centrifugal pump or large-scaled tank. The device comprises a pressure accumulation tank containing a high pressure nitrogen gas and cooling water inside, a condensate storage tank, a pressure suppression pool and a jet stream pump. In this device there are disposed a pipeline for guiding cooling water in the pressure accumulation tank as a jetting water to a jetting stream pump, a pipeline for guiding cooling water stored in the condensate storage tank and the pressure suppression pool as pumped water to the jetting pump and, further, a pipeline for guiding the discharged water from the jet stream pump which is a mixed stream of pumped water and jetting water into the reactor pressure vessel. In this constitution, a sufficient amount of water ranging from relatively high pressure to low pressure can be supplied into the reactor pressure vessel, without increasing the size of the pressure accumulation tank. (I.S.)

  20. Emergency reactor cooling circuit

    International Nuclear Information System (INIS)

    Araki, Hidefumi; Matsumoto, Tomoyuki; Kataoka, Yoshiyuki.

    1994-01-01

    Cooling water in a gravitationally dropping water reservoir is injected into a reactor pressure vessel passing through a pipeline upon occurrence of emergency. The pipeline is inclined downwardly having one end thereof being in communication with the pressure vessel. During normal operation, the cooling water in the upper portion of the inclined pipeline is heated by convection heat transfer from the communication portion with the pressure vessel. On the other hand, cooling water present at a position lower than the communication portion forms cooling water lumps. Accordingly, temperature stratification layers are formed in the inclined pipeline. Therefore, temperature rise of water in a vertical pipeline connected to the inclined pipeline is small. With such a constitution, the amount of heat lost from the pressure vessel by way of the water injection pipeline is reduced. Further, there is no worry that cooling water to be injected upon occurrence of emergency is boiled under reduced pressure in the injection pipeline to delay the depressurization of the pressure vessel. (I.N.)

  1. Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

    International Nuclear Information System (INIS)

    Rabbaa, S; Stiens, J

    2012-01-01

    Gallium nitride (GaN) is a relatively new semiconductor material that has the potential of replacing gallium arsenide (GaAs) in some of the more recent technological applications, for example chemical sensor applications. In this paper, we introduce a triangular quantum well model for an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure used as a chemical and biological sensor for pH and dipole moment measurements of polar liquids. We have performed theoretical calculations related to the HEMT characteristics and we have compared them with experimental measurements carried out in many previous papers. These calculations include the current-voltage (I-V) characteristics of the device, the surface potential, the change in the drain current with the dipole moment and the drain current as a function of pH. The results exhibit good agreement with experimental measurements for different polar liquids and electrolyte solutions. It is also found that the drain current of the device exhibits a large linear variation with the dipole moment, and that the surface potential and the drain current depend strongly on the pH. Therefore, it can distinguish molecules with slightly different dipole moments and solutions with small variations in pH. The ability of the device to sense biomolecules (such as proteins) with very large dipole moments is investigated.

  2. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

    International Nuclear Information System (INIS)

    Sun Wei-Wei; Zheng Xue-Feng; Fan Shuang; Wang Chong; Du Ming; Zhang Kai; Mao Wei; Zhang Jin-Cheng; Hao Yue; Chen Wei-Wei; Cao Yan-Rong; Ma Xiao-Hua

    2015-01-01

    The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons. (paper)

  3. Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

    International Nuclear Information System (INIS)

    Faramehr, Soroush; Kalna, Karol; Igić, Petar

    2014-01-01

    A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V–4000 V for a source-to-drain spacing (L SD ) of 6 μm–32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance R S for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm 2 and 3.5 mΩ · cm 2 , respectively. Further improvement up to BV  = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of R S = 35.5 mΩ · cm 2 . The leakage current in the proposed devices stays in the range of ∼5 × 10 −9 mA mm −1 . (paper)

  4. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    International Nuclear Information System (INIS)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

    2012-01-01

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

    2012-01-15

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Directory of Open Access Journals (Sweden)

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  7. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  8. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Science.gov (United States)

    Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chen, Pei-Chi; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-02-15

    In this study, we report the development of a high sensitivity assay for the detection of cardiac troponin I using electrical double layer gated high field AlGaN/GaN HEMT biosensor. The unique gating mechanism overcomes the drawback of charge screening seen in traditional FET based biosensors, allowing detection of target proteins in physiological solutions without sample processing steps. Troponin I specific antibody and aptamer are used as receptors. The tests carried out using purified protein solution and clinical serum samples depict high sensitivity, specificity and wide dynamic range (0.006-148ng/mL). No additional wash or sample pre-treatment steps are required, which greatly simplifies the biosensor system. The miniaturized HEMT chip is packaged in a polymer substrate and easily integrated with a portable measurement unit, to carry out quantitative troponin I detection in serum samples with < 2µl sample volume in 5min. The integrated prototype biosensor unit demonstrates the potential of the method as a rapid, inexpensive, high sensitivity CVD biomarker assay. The highly simplified protocols and enhanced sensor performance make our biosensor an ideal choice for point of care diagnostics and personal healthcare systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

    Science.gov (United States)

    Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Ziguang; Wang, Xiaoli; Deng, Zhen; Li, Yan; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2012-02-20

    GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.

  10. Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

    Science.gov (United States)

    Kubo, Toshiharu; Egawa, Takashi

    2017-12-01

    HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

  11. Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

    2017-11-01

    In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

  12. Core cooling systems

    International Nuclear Information System (INIS)

    Hoeppner, G.

    1980-01-01

    The reactor cooling system transports the heat liberated in the reactor core to the component - heat exchanger, steam generator or turbine - where the energy is removed. This basic task can be performed with a variety of coolants circulating in appropriately designed cooling systems. The choice of any one system is governed by principles of economics and natural policies, the design is determined by the laws of nuclear physics, thermal-hydraulics and by the requirement of reliability and public safety. PWR- and BWR- reactors today generate the bulk of nuclear energy. Their primary cooling systems are discussed under the following aspects: 1. General design, nuclear physics constraints, energy transfer, hydraulics, thermodynamics. 2. Design and performance under conditions of steady state and mild transients; control systems. 3. Design and performance under conditions of severe transients and loss of coolant accidents; safety systems. (orig./RW)

  13. Reactor cooling system

    International Nuclear Information System (INIS)

    Kato, Etsuji.

    1979-01-01

    Purpose: To eliminate cleaning steps in the pipelines upon reactor shut-down by connecting a filtrating and desalting device to the cooling system to thereby always clean up the water in the pipelines. Constitution: A filtrating and desalting device is connected to the pipelines in the cooling system by way of drain valves and a check valve. Desalted water is taken out from the exit of the filtrating and desalting device and injected to one end of the cooling system pipelines by way of the drain valve and the check valve and then returned by way of another drain valve to the desalting device. Water in the pipelines is thus always desalted and the cleaning step in the pipelines is no more required in the shut-down. (Kawakami, Y.)

  14. ELECTRON COOLING FOR RHIC

    International Nuclear Information System (INIS)

    BEN-ZVI, I.; AHRENS, L.; BRENNAN, M.; HARRISON, M.; KEWISCH, J.; MACKAY, W.; PEGGS, S.; ROSER, T.; SATOGATA, T.; TRBOJEVIC, D.; YAKIMENKO, V.

    2001-01-01

    We introduce plans for electron-cooling of the Relativistic Heavy Ion Collider (RHIC). This project has a number of new features as electron coolers go: It will cool 100 GeV/nucleon ions with 50 MeV electrons; it will be the first attempt to cool a collider at storage-energy; and it will be the first cooler to use a bunched beam and a linear accelerator as the electron source. The linac will be superconducting with energy recovery. The electron source will be based on a photocathode gun. The project is carried out by the Collider-Accelerator Department at BNL in collaboration with the Budker Institute of Nuclear Physics

  15. Muon ionization cooling experiment

    CERN Multimedia

    CERN. Geneva

    2003-01-01

    A neutrino factory based on a muon storage ring is the ultimate tool for studies of neutrino oscillations, including possibly leptonic CP violation. It is also the first step towards muon colliders. The performance of this new and promising line of accelerators relies heavily on the concept of ionisation cooling of minimum ionising muons, for which much R&D is required. The concept of a muon ionisation cooling experiment has been extensively studied and first steps are now being taken towards its realisation by a joint international team of accelerator and particle physicists. The aim of the workshop is to to explore at least two versions of an experiment based on existing cooling channel designs. If such an experiment is feasible, one shall then select, on the basis of effectiveness, simplicity, availability of components and overall cost, a design for the proposed experiment, and assemble the elements necessary to the presentation of a proposal. Please see workshop website.

  16. Emergency core cooling device

    International Nuclear Information System (INIS)

    Suzaki, Kiyoshi; Inoue, Akihiro.

    1979-01-01

    Purpose: To improve core cooling effect by making the operation region for a plurality of water injection pumps more broader. Constitution: An emergency reactor core cooling device actuated upon failure of recycling pipe ways is adapted to be fed with cooling water through a thermal sleeve by way of a plurality of water injection pump from pool water in a condensate storage tank and a pressure suppression chamber as water feed source. Exhaust pipes and suction pipes of each of the pumps are connected by way of switching valves and the valves are switched so that the pumps are set to a series operation if the pressure in the pressure vessel is high and the pumps are set to a parallel operation if the pressure in the pressure vessel is low. (Furukawa, Y.)

  17. Monitoring Cray Cooling Systems

    Energy Technology Data Exchange (ETDEWEB)

    Maxwell, Don E [ORNL; Ezell, Matthew A [ORNL; Becklehimer, Jeff [Cray, Inc.; Donovan, Matthew J [ORNL; Layton, Christopher C [ORNL

    2014-01-01

    While sites generally have systems in place to monitor the health of Cray computers themselves, often the cooling systems are ignored until a computer failure requires investigation into the source of the failure. The Liebert XDP units used to cool the Cray XE/XK models as well as the Cray proprietary cooling system used for the Cray XC30 models provide data useful for health monitoring. Unfortunately, this valuable information is often available only to custom solutions not accessible by a center-wide monitoring system or is simply ignored entirely. In this paper, methods and tools used to harvest the monitoring data available are discussed, and the implementation needed to integrate the data into a center-wide monitoring system at the Oak Ridge National Laboratory is provided.

  18. Cooling nuclear reactor fuel

    International Nuclear Information System (INIS)

    Porter, W.H.L.

    1975-01-01

    Reference is made to water or water/steam cooled reactors of the fuel cluster type. In such reactors it is usual to mount the clusters in parallel spaced relationship so that coolant can pass freely between them, the coolant being passed axially from one end of the cluster in an upward direction through the cluster and being effective for cooling under normal circumstances. It has been suggested, however, that in addition to the main coolant flow an auxiliary coolant flow be provided so as to pass laterally into the cluster or be sprayed over the top of the cluster. This auxiliary supply may be continuously in use, or may be held in reserve for use in emergencies. Arrangements for providing this auxiliary cooling are described in detail. (U.K.)

  19. Stochastic cooling for beginners

    International Nuclear Information System (INIS)

    Moehl, D.

    1984-01-01

    These two lectures have been prepared to give a simple introduction to the principles. In Part I we try to explain stochastic cooling using the time-domain picture which starts from the pulse response of the system. In Part II the discussion is repeated, looking more closely at the frequency-domain response. An attempt is made to familiarize the beginners with some of the elementary cooling equations, from the 'single particle case' up to equations which describe the evolution of the particle distribution. (orig.)

  20. Sodium cooled fast reactor

    Energy Technology Data Exchange (ETDEWEB)

    Hokkyo, N; Inoue, K; Maeda, H

    1968-11-21

    In a sodium cooled fast neutron reactor, an ultrasonic generator is installed at a fuel assembly hold-down mechanism positioned above a blanket or fission gas reservoir located above the core. During operation of the reactor an ultrsonic wave of frequency 10/sup 3/ - 10/sup 4/ Hz is constantly transmitted to the core to resonantly inject the primary bubble with ultrasonic energy to thereby facilitate its growth. Hence, small bubbles grow gradually to prevent the sudden boiling of sodium if an accident occurs in the cooling system during operation of the reactor.