Noise emissions of cooling towers; Geraeuschemissionen von Kuehltuermen

Energy Technology Data Exchange (ETDEWEB)

Hinkelmann, Dirk [Mueller-BBM GmbH, Gelsenkirchen (Germany)

2013-09-01

Cooling towers are often large structures with high sound emission. The impact of water drops on the water surface in the collecting basin leads to the generation of middle- and high-frequency noise that is emitted via the air intake opening and the outlet. In forced-draft cooling towers, additional noise is generated by drives and fans. The sound emissions can be predicted by means of empirical calculation models. In this way, noise control measures can be taken into account already at an early phase of planning. Different, proven measures for reduction of sound emissions are taken depending on cooling tower design. Regulations on noise acceptance testing for cooling towers are given in various standards. (orig.)

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

Science.gov (United States)

Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

2000-01-01

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Science.gov (United States)

Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

2017-08-01

In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

The influence of liquid-gas velocity ratio on the noise of the cooling tower

Science.gov (United States)

Yang, Bin; Liu, Xuanzuo; Chen, Chi; Zhao, Zhouli; Song, Jinchun

2018-05-01

The noise from the cooling tower has a great influence on psychological performance of human beings. The cooling tower noise mainly consists of fan noise, falling water noise and mechanical noise. This thesis used DES turbulence model with FH-W model to simulate the flow and sound pressure field in cooling tower based on CFD software FLUENT and analyzed the influence of different kinds noise, which affected by diverse factors, on the cooling tower noise. It can be concluded that the addition of cooling water can reduce the turbulence and vortex noise of the rotor fluid field in the cooling tower at some extent, but increase the impact noise of the liquid-gas two phase. In general, the cooling tower noise decreases with the velocity ratio of liquid to gas increasing, and reaches the lowest when the velocity ratio of liquid to gas is close to l.

Effects of structural modification on reliability of nanoscale nitride HEMTs

Science.gov (United States)

Gaddipati, Vamsi Mohan

AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

Device for noise-abatement in a cooling tower

International Nuclear Information System (INIS)

Baer, E.; Dittrich, H.; Ernst, G.; Roller, W.; Wurz, D.

1977-01-01

This device attenuates the noise of cooling water droplets falling out of trickling plates below a spray facility. In this manner expensive noise-attenuating cranks or embankments around the cooling tower become unnecessary. Noise attenuation is achieved by a catching device closely above the water reservoir. Instead of falling vertically on the water surface, the droplets hit the inclined surfaces of a horizontal grid. A number of such plane or slightly curved surfaces are placed together with little inclination against the vertical (25 0 to 30 0 , with a maximum of 45 0 ) at such a distance that no drop can hit the water surface directly, i.e. unattenuated. In a second type of design also the capacity of the cooling water pumps and with it the investment and operating cost is reduced. For instance, about 2000 kW are saved by higher arrangement of the catching device, closely below the trickling components. (RW) [de

Characteristics of unsteady flow field and flow-induced noise for an axial cooling fan used in a rack mount server computer Characteristics of unsteady flow field and flow-induced noise for an axial cooling fan used in a rack mount server computer

Energy Technology Data Exchange (ETDEWEB)

Lim, Tae Gyun; Jeon, Wan Ho [Technical Research Lab., CEDIC Co., Seoul (Korea, Republic of); Minorikawa, Gaku [Dept. of f Mechanical Engineering, Faculty of Science and Engineering, Hosei University, Tokyo (Japan)

2016-10-15

The recent development of small and lightweight rack mount servers and computers has resulted in the decrease of the size of cooling fans. However, internal fans still need to achieve a high performance to release the heat generated from interior parts, and they should emit low noise. On the contrary, measurement data, such as flow properties and flow visualizations, cannot be obtained easily when cooling fans are small. Thus, a numerical analysis approach is necessary for the performance evaluation and noise reduction of small cooling fans. In this study, the noise of a small cooling fan used for computers or servers was measured and then compared with the aeroacoustic noise result based on a numerical analysis. Three-dimensional Navier-Stokes equations were solved to predict the unsteady flow field and surface pressure fluctuation according to the blades and casing surface used. The simplified Ffowcs Williams and Hawkings equation was used to predict aeroacoustic noise by assuming that a dipole is the major cause of fan noise. Results of the aeroacoustic noise analysis agreed well with that of the experiment, and a tonal noise whose frequency was lower than the first blade passing frequency could be identified in the noise spectrum. This phenomenon is caused by the shape of the bell mouth. A coherence analysis was performed to examine the correlation between the shape of the cooling fan and the noise.

Characteristics of unsteady flow field and flow-induced noise for an axial cooling fan used in a rack mount server computer Characteristics of unsteady flow field and flow-induced noise for an axial cooling fan used in a rack mount server computer

International Nuclear Information System (INIS)

Lim, Tae Gyun; Jeon, Wan Ho; Minorikawa, Gaku

2016-01-01

The recent development of small and lightweight rack mount servers and computers has resulted in the decrease of the size of cooling fans. However, internal fans still need to achieve a high performance to release the heat generated from interior parts, and they should emit low noise. On the contrary, measurement data, such as flow properties and flow visualizations, cannot be obtained easily when cooling fans are small. Thus, a numerical analysis approach is necessary for the performance evaluation and noise reduction of small cooling fans. In this study, the noise of a small cooling fan used for computers or servers was measured and then compared with the aeroacoustic noise result based on a numerical analysis. Three-dimensional Navier-Stokes equations were solved to predict the unsteady flow field and surface pressure fluctuation according to the blades and casing surface used. The simplified Ffowcs Williams and Hawkings equation was used to predict aeroacoustic noise by assuming that a dipole is the major cause of fan noise. Results of the aeroacoustic noise analysis agreed well with that of the experiment, and a tonal noise whose frequency was lower than the first blade passing frequency could be identified in the noise spectrum. This phenomenon is caused by the shape of the bell mouth. A coherence analysis was performed to examine the correlation between the shape of the cooling fan and the noise

Noise characteristics of neutron images obtained by cooled CCD device

International Nuclear Information System (INIS)

Taniguchi, Ryoichi; Sasaki, Ryoya; Okuda, Shuichi; Okamoto, Ken-Ichi; Ogawa, Yoshihiro; Tsujimoto, Tadashi

2009-01-01

The noise characteristics of a cooled CCD device induced by neutron and gamma ray irradiation have been investigated. In the cooled CCD images, characteristic white spot noises (CCD noise) frequently appeared, which have a shape like a pixel in most cases and their brightness is extremely high compared with that of the image pattern. They could be divided into the two groups, fixed pattern noise (FPN) and random noise. The former always appeared in the same position in the image and the latter appeared at any position. In the background image, nearly all of the CCD noises were found to be the FPN, while many of them were the random noise during the irradiation. The random CCD noises increased with irradiation and decreased soon after the irradiation. In the case of large irradiation, a part of the CCD noise remained as the FPN. These facts suggest that the CCD noise is a phenomenon strongly relating to radiation damage of the CCD device.

Debuncher Momentum Cooling Systems Signal to Noise Measurements

Energy Technology Data Exchange (ETDEWEB)

Pasquinelli, Ralph J.; /Fermilab

2001-12-18

The Debuncher Momentum cooling systems were carefully measured for signal to noise. It was observed that cooling performance was not optimum. Closer inspection shows that the installed front-end bandpass filters are wider than the pickup response. (The original filters were specified to be wider so that none of the available bandwidth would be clipped.) The end result is excess noise is amplified and passed onto the kickers unimpeded, hence, reducing the achievable system gain. From this data, new filters should be designed to improve performance. New system bandwidths are specified on the data figures. Also included are the transfer function measurements that clearly show adjacent band response. In band 4 upper, the adjacent lobes are strong and out of phase. This is also degrading the system performance. The correlation between spectrum analyzer signal to noise and network analyzer system transfer functions is very strong. The table below has a calculation of expected improvement of front noise reduction by means of building new front-end bandpass filters. The calculation is based on a flat input noise spectrum and is a linear estimation of improvement. The listed 3dB bandwidths of the original filters are from measured data. The expected bandwidth is taken from the linear spectrum analyzer plots and is closer to a 10 dB bandwidth making the percentage improvement conservative. The signal to noise measurements are taken with circulating pbars in the Debuncher. One cooling system was measured at a time with all others off. Beam currents are below ten microamperes.

Debuncher Momentum Cooling Systems Signal to Noise Measurements

International Nuclear Information System (INIS)

Pasquinelli, Ralph J.

2001-01-01

The Debuncher Momentum cooling systems were carefully measured for signal to noise. It was observed that cooling performance was not optimum. Closer inspection shows that the installed front-end bandpass filters are wider than the pickup response. (The original filters were specified to be wider so that none of the available bandwidth would be clipped.) The end result is excess noise is amplified and passed onto the kickers unimpeded, hence, reducing the achievable system gain. From this data, new filters should be designed to improve performance. New system bandwidths are specified on the data figures. Also included are the transfer function measurements that clearly show adjacent band response. In band 4 upper, the adjacent lobes are strong and out of phase. This is also degrading the system performance. The correlation between spectrum analyzer signal to noise and network analyzer system transfer functions is very strong. The table below has a calculation of expected improvement of front noise reduction by means of building new front-end bandpass filters. The calculation is based on a flat input noise spectrum and is a linear estimation of improvement. The listed 3dB bandwidths of the original filters are from measured data. The expected bandwidth is taken from the linear spectrum analyzer plots and is closer to a 10 dB bandwidth making the percentage improvement conservative. The signal to noise measurements are taken with circulating pbars in the Debuncher. One cooling system was measured at a time with all others off. Beam currents are below ten microamperes.

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

Science.gov (United States)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Toward sub-Kelvin resistive cooling and non destructive detection of trapped non-neutral electron plasma

Science.gov (United States)

Di Domizio, S.; Krasnický, D.; Lagomarsino, V.; Testera, G.; Vaccarone, R.; Zavatarelli, S.

2015-01-01

A resonant circuit tuned to a particular frequency of the motion of charged particles stored in a Penning trap and connected to a low noise amplifier allows, at the same time, cooling and non destructive detection of the particles. Its use is widely diffused when single or few particles are stored near the centre of a hyperbolic Penning trap. We present a consistent model that predicts the shape of the induced signal when the tuned circuit is used to detect and cool the axial motion of a cold non neutral plasma stored in an open-ended cylindrical Penning trap. The model correctly accounts for the not negligible axial plasma size. We show that the power spectrum of the signal measured across the tuned circuit provides information about the particle number and insights about the plasma temperature. We report on the design of a HEMT-based cryogenic amplifier working at 14.4 MHz and 4.2 K and the results of the noise measurements. We have measured a drain current noise in the range from 6 to 17 pA/√Hz, which corresponds to an increase of the tuned circuit equivalent temperature of at maximum 0.35 K. The cryogenic amplifier has a very low power consumption from few tens to few hundreds of μW corresponding to a drain current in the range 100-800 μ A. An additional contribution due to the gate noise has been identified when the drain current is below 300 μA above that value an upper limit of the increase of the equivalent tuned circuit temperature due to this contribution of 0.02 K has been obtained. These features make the tuned circuit connected to this amplifier a promising device for detecting and cooling the axial motion of an electron plasma when the Penning trap is mounted inside a dilution refrigerator.

Low-noise cooling system for PC on the base of loop heat pipes

International Nuclear Information System (INIS)

Pastukhov, Vladimir G.; Maydanik, Yury F.

2007-01-01

The problem of current importance connected with a wide use of personal computers (PC) and a rapid growth of their performance is a decrease in the noise level created at the operation of cooling system fans. One of the possible ways of solving this problem may be the creation of passive or semi-passive systems on the base of loop heat pipes (LHPs) in which the heat sink is an external radiator cooled by natural and/or forced air convection. The paper presents the results of development and tests of several variants of such systems, which are capable of sustaining an operating temperature of 72-78 deg. C on the heat source thermal interface which dissipates 100 W at an ambient temperature of 22 deg. C. It is also shown that the use of additional means of active cooling in combination with LHPs allows to increase the value of dissipated heat up to 180 W and to decrease the system thermal resistance down to 0.29 deg. C/W

Active noise canceling system for mechanically cooled germanium radiation detectors

Science.gov (United States)

Nelson, Karl Einar; Burks, Morgan T

2014-04-22

A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

Science.gov (United States)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Noise from cooling towers of power parks

International Nuclear Information System (INIS)

Zakaria, J.; Moore, F.K.

1975-01-01

A study is presented of the noise pollution problem for large power parks proposed for the future. Such parks might have an area of about 75 sq. miles, and a generating capacity up to 48000 MW. A comparative analysis has been done for natural and mechanical-draft wet towers as the major sources of acoustic power. Noise radiation from single isolated towers as well as from a dispersed array of towers has been considered for both types of cooling systems. Major noise attenuation effects considered are due to the atmospheric absorption and A-weighting. Conditions of 60F and 70 percent relative humidity in a still atmosphere have been assumed

An ultra low noise AC beam transformer for deceleration and diagnostics of low intensity beams

CERN Document Server

González, C

1999-01-01

The design of a broad band ultra-low noise ferrite loaded AC beam transformer is presented. It is designed for use in the CERN Antiproton Decelerator (AD), where beams of a few 107 charges must be decelerated from 3.5 GeV/c to 100 MeV/c. It is used in the RF beam-phase loop, and for intensity and bunch shape measurements during deceleration. When the beam is debunched for cooling on magnetic flat tops, the pick-up is used for measurements of intensity and momentum distribution by means of longitudinal Schottky scans. When used as Schottky pick-up, the signal to noise ratio should be better by about 40 dB than the existing stripline based longitudinal Schottky pick-up. The integrated design of pick-up and associated low-noise amplifier is presented. The achieved noise performance of a few from 1 to 3 MHz is obtained by attaching a low-noise, high-impedance silicon JFET (junction field effect transistor) amplifier to a high-Q resonant ferrite loaded cavity, and then eliminating the resonant response by low-nois...

Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

OpenAIRE

Matiss, A.; Janssen, G.; Bertenburg, R. M.; Brockerhoff, W.; Tegude, F.J.

2004-01-01

To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect...

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

2014-01-01

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

Science.gov (United States)

Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd;

Ultra-Low Noise Germanium Neutrino Detection system (ULGeN).

Energy Technology Data Exchange (ETDEWEB)

Cabrera-Palmer, Belkis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Barton, Paul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2017-07-01

Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.

Ultra-Low Noise Germanium Neutrino Detection system (ULGeN)

International Nuclear Information System (INIS)

Cabrera-Palmer, Belkis; Barton, Paul

2017-01-01

Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

International Nuclear Information System (INIS)

Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

2016-01-01

This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

Turbine airfoil cooling system with cooling systems using high and low pressure cooling fluids

Science.gov (United States)

Marsh, Jan H.; Messmann, Stephen John; Scribner, Carmen Andrew

2017-10-25

A turbine airfoil cooling system including a low pressure cooling system and a high pressure cooling system for a turbine airfoil of a gas turbine engine is disclosed. In at least one embodiment, the low pressure cooling system may be an ambient air cooling system, and the high pressure cooling system may be a compressor bleed air cooling system. In at least one embodiment, the compressor bleed air cooling system in communication with a high pressure subsystem that may be a snubber cooling system positioned within a snubber. A delivery system including a movable air supply tube may be used to separate the low and high pressure cooling subsystems. The delivery system may enable high pressure cooling air to be passed to the snubber cooling system separate from low pressure cooling fluid supplied by the low pressure cooling system to other portions of the turbine airfoil cooling system.

Assessment of auditory impression of the coolness and warmness of automotive HVAC noise.

Science.gov (United States)

Nakagawa, Seiji; Hotehama, Takuya; Kamiya, Masaru

2017-07-01

Noise induced by a heating, ventilation and air conditioning (HVAC) system in a vehicle is an important factor that affects the comfort of the interior of a car cabin. Much effort has been devoted to reduce noise levels, however, there is a need for a new sound design that addresses the noise problem from a different point of view. In this study, focusing on the auditory impression of automotive HVAC noise concerning coolness and warmness, psychoacoustical listening tests were performed using a paired comparison technique under various conditions of room temperature. Five stimuli were synthesized by stretching the spectral envelopes of recorded automotive HVAC noise to assess the effect of the spectral centroid, and were presented to normal-hearing subjects. Results show that the spectral centroid significantly affects the auditory impression concerning coolness and warmness; a higher spectral centroid induces a cooler auditory impression regardless of the room temperature.

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

Energy Technology Data Exchange (ETDEWEB)

Du Rui; Dai Yang; Chen Yanling; Yang Fuhua, E-mail: ddrr@semi.ac.c [Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2009-03-15

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

International Nuclear Information System (INIS)

Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

2012-01-01

Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

Design and Characterization of Low-noise Dewar for High-sensitivity SQUID Operation

International Nuclear Information System (INIS)

Yu, K. K.; Lee, Y. H.; Kim, K.; Kwon, H.; Kim, J. M.

2010-01-01

We have fabricated the low noise liquid helium(LHe) dewar with a different shape of thermal shield to apply the 64-channel SQUID(Superconducting Quantum Interference Device) gradiometer. The first shape of thermal shield was made of an aluminum plate with a wide width of 100 mm slit and the other shape was modified with a narrow width of 20 mm slit. The two types of dewars were estimated by comparing the thermal noise and the signal-to-noise ratio(SNR) of magnetocardiography(MCG) using the 1st order SQUID gradiometer system cooled each dewar. The white noise was different as a point of the dewar. The noise was increased as close as the edge of dewar, and also increased at the thermal shield with the more wide width slit. The white noise of the dewar with thermal shield of 100 mm slit was 6.5 fT/Hz 1/2 at the center of dewar and 25 fT/Hz 1/2 at the edge, and the white noise of the other one was 3.5 - 7 fT/Hz 1/2 . We measured the MCG using 64-channel SQUID gradiometer cooled at each LHe dewar and compared the SNR of MCG signal. The SNR was improved of 10 times at the LHe dewar with a modified thermal shield.

Annoyance of low frequency noise and traffic noise

DEFF Research Database (Denmark)

Mortensen, F.R.; Poulsen, Torben

2001-01-01

The annoyance of different low frequency noise sources was determined and compared to the annoyance from traffic noise. Twenty-two subjects participated in laboratory listening tests. The sounds were presented by loudspeakers in a listening room and the spectra of the low frequency noises were...

Radio-frequency shot-noise measurement in a magnetic tunnel junction with a MgO barrier

International Nuclear Information System (INIS)

Rehman, Mushtaq; Park, Junghwan; Song, Woon; Chong, Yonuk; Lee, Yeonsub; Min, Byoungchul; Shin, Kyungho; Ryu, Sangwan; Khim, Zheong

2010-01-01

We measured the noise power of a magnetic tunnel junction in the frequency range of 710 ∼ 1200 MHz. A low-noise cryogenic HEMT amplifier was used to measure the small noise signal at a high frequency with wide bandwidth. The MgO-barrier tunnel junction showed large tunnel magnetoresistance ratio of 215% at low temperature, which indicates electronic transport through the tunnel barrier without any significant spin-flip scattering. In the bias-dependent noise measurement, however, the zero-bias shot noise was enhanced compared to the value expected from a perfect tunnel barrier or the value observed from a good Al-AlO x -Al tunnel junction. We assume that this enhanced noise comes from inelastic tunneling processes through the barrier, which may be related to the observed zero-bias anomaly in the differential resistance of the tunnel junctions. We present a simple phenomenological model for how the inelastic scattering process can enhance the zero-bias noise in a tunnel junction.

Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

International Nuclear Information System (INIS)

Arnaboldi, Claudio; Fascilla, Andrea; Lund, M.W.; Pessina, Gianluigi

2004-01-01

We have selected different low noise JFET processes that have shown outstanding dynamic and noise performance at both room temperature and low temperatures. We have studied JFETs made with a process optimized for cryogenic operation, testing several devices of varying capacitance. For most of them, we have been able to detect the presence of shallow individual traps at low temperature which create low frequency (LF) Generation-Recombination (G-R) noise. For one device type no evidence of traps has been observed at the optimum temperature of operation (around 100 K). It had a very small residual LF noise. This device has been cooled down to 14 K. From below 100 K down to 14 K the noise was observed to increase due to G-R noise originating from donor atoms (dopants) inside the channel. A very simple theoretical interpretation confirms the nature of G-R noise from these very shallow trapping centers. We also studied devices from a process optimized for room temperature operation and found noise corresponding to the presence of a single deep level trap. Even for this circumstance the theory was experimentally confirmed. The measurement approach we used allowed us to achieve a very high accuracy in the modeling of the measured G-R noise. The ratio of the density of the atoms responsible for G-R noise above the doping concentration, N T /N d , has been verified with a sensitivity around 10 -7

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

Science.gov (United States)

Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

2018-04-01

The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

ECV profiling of GaAs and GaN HEMT heterostructures

Science.gov (United States)

Yakovlev, G.; Zubkov, V.

2018-03-01

AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

Measurement of spectral phase noise in a cryogenically cooled Ti:Sa amplifier (Conference Presentation)

Science.gov (United States)

Nagymihaly, Roland S.; Jójárt, Péter; Börzsönyi, Ádám.; Osvay, Károly

2017-05-01

In most of cases the drift of the carrier envelope phase (CEP) of a chirped pulse amplifier (CPA) system is determined only [1], being the relevant parameter at laser-matter interactions. The need of coherent combination of multiple amplifier channels to further increase the peak power of pulses requires interferometric precision [2]. For this purpose, the stability of the group delay of the pulses may become equally important. Further development of amplifier systems requires the investigation of phase noise contributions of individual subsystems, like amplifier stages. Spectrally resolved interferometry (SRI), which is a completely linear optical method, makes the measurement of spectral phase noise possible of basically any part of a laser system [3]. By utilizing this method, the CEP stability of water-cooled Ti:Sa based amplifiers was investigated just recently, where the effects of seed and pump energy, repetition rate, and the cooling crystal mounts were thoroughly measured [4]. We present a systematic investigation on the noise of the spectral phase, including CEP, of laser pulses amplified in a cryogenically-cooled Ti:Sa amplifier of a CPA chain. The double-pass amplifier was built in the sample arm of a compact Michelson interferometer. The Ti:Sa crystal was cooled below 30 °K. The inherent phase noise was measured for different operation modes, as at various repetition rates, and pump depletion. Noise contributions of the vacuum pumps and the cryogenic refrigerator were found to be 43 and 47 mrad, respectively. We have also identified CEP noise having thermal as well as mechanical origin. Both showed a monotonically decreasing tendency towards higher repetition rates. We found that the widths of the noise distributions are getting broader towards lower repetition rates. Spectral phase noise with and without amplification was measured, and we found no significant difference in the phase noise distributions. The mechanical vibration was also measured in

Low noise constant current source for bias dependent noise measurements

International Nuclear Information System (INIS)

Talukdar, D.; Bose, Suvendu; Bardhan, K. K.; Chakraborty, R. K.

2011-01-01

A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 μA to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noise voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.

Low frequency noise study.

Science.gov (United States)

2007-04-01

This report documents a study to investigate human response to the low-frequency : content of aviation noise, or low-frequency noise (LFN). The study comprised field : measurements and laboratory studies. The major findings were: : 1. Start-of-takeof...

Characterization of 0.18- μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

Science.gov (United States)

Yoon, Hyung Sup; Min, Byoung-Gue; Lee, Jong Min; Kang, Dong Min; Ahn, Ho Kyun; Cho, Kyu-Jun; Do, Jae-Won; Shin, Min Jeong; Jung, Hyun-Wook; Kim, Sung Il; Kim, Hae Cheon; Lim, Jong Won

2017-09-01

We fabricated a 0.18- μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance ( g m ) of 345 mS/mm, and a threshold voltage ( V th ) of -2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency ( f T ) of 48 GHz and a maximum oscillation frequency ( f max ) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.

A high rate, low noise, x-ray silicon strip detector system

International Nuclear Information System (INIS)

Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

1993-11-01

An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation

NARCIS (Netherlands)

Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

2005-01-01

Low Noise Amplifiers (LNAs) are commonly used to amplify signals that are too weak for direct processing for example in radio or cable receivers. Traditionally, low noise amplifiers are implemented via tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. This can render

Emerging GaN-based HEMTs for mechanical sensing within harsh environments

Science.gov (United States)

Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

2014-06-01

Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

International Nuclear Information System (INIS)

Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

2014-01-01

The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

A dual-mode driver IC with monolithic negative drive-voltage capability and digital current-mode controller for depletion-mode GaN HEMT

NARCIS (Netherlands)

Wen, Y.; Rose, M.; Fernandes, R.; van Otten, R.; Bergveld, H.J.; Trescases, O.

2017-01-01

This work presents a driver and controller integrated circuit (IC) for depletion-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The dual-mode driver can be configured for cascode-drive (CD) or HEMT-drive (HD) mode. In the CD mode, a cascode low-voltage DMOS is driven to

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils.

Science.gov (United States)

Lu, Jonathan Y; Grafendorfer, Thomas; Zhang, Tao; Vasanawala, Shreyas; Robb, Fraser; Pauly, John M; Scott, Greig C

2016-12-01

Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.

An improved large signal model of InP HEMTs

Science.gov (United States)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Neutron noise analysis for malfunction diagnosis at sodium cooled reactors

International Nuclear Information System (INIS)

Hoppe, P.

1978-09-01

For the investigation of the potential use of neutron noise analysis at sodium cooled power reactors, measurements have been performed at the KNK I reactor over a period of 18 month under different operational conditions. The signal fluctuations of the following tranducers have been recorded: In-core and Ex-core neutron detectors, temperature-, flow-, pressure-, vibration- and acoustic sensors. These extensive measurements have been analyzed in the frequency range from 0,001 Hz to 1000 Hz with all currently known methods for the identification of noise sources. The following results have been found: - Neutron noise for f 20 Hz the white detection noise prevails. In the region from 1 Hz to 20 Hz the vibrations of core components contribute to neutron noise. - Neutron noise is influenced by the state of the plant. - The contributions to neutron noise due to the fluctuations of coolant flow and inlet temperature are small compared to those produced by the movements of the control rod initiated by the reactor control system. The quantitatively unidentifiable amount of reactivity fluctuations (0,6 time-dependent thermal bowing of the core. With respect to these results and by calculation of the neutron noise patterns to be expected for the SNR 300, the following possible applications for neutron noise analysis have been found: By means of neutron noise analysis only reactivity fluctuations can be identified and supervised which are produced by time dependent changes of the core geometry. Furthermore neutron noise analysis is well suited for a sensitive detection of control rod vibrations and of local sodium boiling. Finally it can be used for the surveillance of the proper functioning of the reactor control system and of the control rod drive mechanism. (orig./HP) 891 HP [de

Precision Continuum Receivers for Astrophysical Applications

Science.gov (United States)

Wollack, Edward J.

2011-01-01

Cryogenically cooled HEMT (High Electron Mobility Transistor) amplifiers find widespread use in radioastronomy receivers. In recent years, these devices have also been commonly employed in broadband receivers for precision measurements of the Cosmic Microwave Background (CMB) radiation. In this setting, the combination of ultra-low-noise and low-spectral-resolution observations reinforce the importance achieving suitable control over the device environment to achieve fundamentally limited receiver performance. The influence of the intrinsic amplifier stability at low frequencies on data quality (e.g., achievable noise and residual temporal correlations), observational and calibration strategies, as well as architectural mitigation approaches in this setting will be discussed. The implications of device level 1/f fluctuations reported in the literature on system performance will be reviewed.

A coherent polarimeter array for the Large Scale Polarization Explorer balloon experiment

OpenAIRE

Bersanelli, M.; Mennella, A.; Morgante, G.; Zannoni, M.; Addamo, G.; Baschirotto, A.; Battaglia, P.; Baù, A.; Cappellini, B.; Cavaliere, F.; Cuttaia, F.; Del Torto, F.; Donzelli, S.; Farooqui, Z.; Frailis, M.

2012-01-01

We discuss the design and expected performance of STRIP (STRatospheric Italian Polarimeter), an array of coherent receivers designed to fly on board the LSPE (Large Scale Polarization Explorer) balloon experiment. The STRIP focal plane array comprises 49 elements in Q band and 7 elements in W-band using cryogenic HEMT low noise amplifiers and high performance waveguide components. In operation, the array will be cooled to 20 K and placed in the focal plane of a $\\sim 0.6$ meter telescope prov...

High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

International Nuclear Information System (INIS)

Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

1985-01-01

BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

Programmable, very low noise current source

Science.gov (United States)

Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.

2014-12-01

We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

Directory of Open Access Journals (Sweden)

Chao Yang

2015-01-01

Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

AlGaN/GaN double-channel HEMT

International Nuclear Information System (INIS)

Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

2010-01-01

The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

Analysis and reduction of thermal magnetic noise in liquid-He dewar for sensitive low-field nuclear magnetic resonance measurements

International Nuclear Information System (INIS)

Hwang, S. M.; Yu, K. K.; Lee, Y. H.; Kang, C. S.; Kim, K.; Lee, S. J.

2013-01-01

For sensitive measurements of micro-Tesla nuclear magnetic resonance (μT-NMR) signal, a low-noise superconducting quantum interference device (SQUID) system is needed. We have fabricated a liquid He dewar for an SQUID having a large diameter for the pickup coil. The initial test of the SQUID system showed much higher low-frequency magnetic noise caused by the thermal magnetic noise of the aluminum plates used for the vapor-cooled thermal shield material. The frequency dependence of the noise spectrum showed that the noise increases with the decrease of frequency. This behavior could be explained from a two-layer model; one generating the thermal noise and the other one shielding the thermal noise by eddy-current shielding. And the eddy-current shielding effect is strongly dependent on the frequency through the skin-depth. To minimize the loop size for the fluctuating thermal noise current, we changed the thermal shield material into insulated thin Cu mesh. The magnetic noise of the SQUID system became flat down to 0.1 Hz with a white noise of 0.3 fT√ Hz, including the other noise contributions such as SQUID electronics and magnetically shielded room, etc, which is acceptable for low-noise μT-NMR experiments.

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

Energy Technology Data Exchange (ETDEWEB)

Boardman, D

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

International Nuclear Information System (INIS)

Boardman, D.

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Cao Meng-Yi; Lu Yang; Chen Yong-He; Zheng Jia-Xin; Ma Xiao-Hua; Hao Yue; Wei Jia-Xing; Li Wei-Jun

2014-01-01

In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

International Nuclear Information System (INIS)

Witte, H; Warnke, C; Krost, A; Voigt, T; De Lima, A; Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K

2011-01-01

Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO x isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

Energy Technology Data Exchange (ETDEWEB)

Witte, H; Warnke, C; Krost, A [Institute of Experimental Physics, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Voigt, T; De Lima, A [Institute for Physiology, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K, E-mail: hartmut.witte@physik.uni-magdeburg.de [Process Systems Engineering, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany)

2011-09-07

Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO{sub x} isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

Science.gov (United States)

Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

2017-11-01

In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

Nonlinearly stacked low noise turbofan stator

Science.gov (United States)

Schuster, William B. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor)

2009-01-01

A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

Superconducting low-noise oscillator

International Nuclear Information System (INIS)

Riebman, L.

1992-01-01

This patent describes a cryogenic oscillator having low phase noise and low noise. It comprises resonant circuit means formed of superconducting material for generating a signal at a desired frequency; linear amplifier means electrically connected to the resonant circuit means at first and second locations thereon; limiter means electrically connected to the resonant circuit means at a third location thereon; and buffer amplifier means for applying the signal generated by the resonant circuit means to a load and electrically connected to the resonant circuit means at a fourth location thereon. This patent also describes a method of minimizing phase noise and 1/f noise in an oscillator circuit of the type having a resonant circuit driving a load and at least a linear amplifier connected to the resonant circuit defining a closed loop having a loop gain greater than unity, and having a limiter for stabilizing the oscillator. It comprises connecting between the resonant circuit and the load a buffer amplifier and connecting the linear amplifier and the buffer amplifier to the resonant circuit

Nonlinear characterization of GaN HEMT

International Nuclear Information System (INIS)

Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

2010-01-01

DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

Science.gov (United States)

Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

2015-02-01

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

Low-frequency-noise complaints

DEFF Research Database (Denmark)

Pedersen, Christian Sejer; Møller, Henrik; Persson-Waye, Kerstin

2008-01-01

From 203 cases of low-frequency complaints a random selection of twenty-one cases were investigated. The main aim of the investigation was to answer the question whether the annoyance is caused by an external physical sound or by a physically non-existing sound, i.e. low-frequency tinnitus. Noise...... of the complainants are annoyed by a physical sound (20-180 Hz), while others suffer from low-frequency tinnitus (perceived frequency 40-100 Hz). Physical sound at frequencies below 20 Hz (infrasound) is not responsible for the annoyance - or at all audible - in any of the investigated cases, and none...... of the complainants has extraordinary hearing sensitivity at low frequencies. For comparable cases of low-frequency noise complaints in general, it is anticipated that physical sound is responsible in a substantial part of the cases, while low-frequency tinnitus is responsible in another substantial part of the cases....

Subjective annoyance caused by indoor low-level and low frequency noise and control method

Institute of Scientific and Technical Information of China (English)

DI Guo-qing; ZHANG Bang-jun; SHANG Qi

2005-01-01

The influence of low-level noise has not been widely noticed. This paper discovered that low-level and low frequency noise(Aweighted equivalent level Leq ＜ 45 dB) causes higher probability of subjective annoyance. The fuzzy mathematic principle was applied to deal with the threshold level of subjective annoyance from noise in this study; there is preferable relationship between the indoor noise and noise annoyance at low frequency noise level. Study indicated at the same centered noise level, the change of annoyance probability is mainly caused by the change of the frequency spectrum characteristic of the indoor noise. Under low noise level environment, without change of the medium-low frequency noise, the slight increase of medium-high frequency noise level with the help of noise sheltering effect can significantly reduce the noise annoyance. This discovery brings a new resolution on how to improve the environmental quality of working or living places. A noise control model is given in this study according to the acoustic analysis.

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

DEFF Research Database (Denmark)

Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco

2016-01-01

In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibil......In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different...... be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide...

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Energy Technology Data Exchange (ETDEWEB)

Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

2009-06-15

In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

Science.gov (United States)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

White noise of Nb-based microwave superconducting quantum interference device multiplexers with NbN coplanar resonators for readout of transition edge sensors

Science.gov (United States)

Kohjiro, Satoshi; Hirayama, Fuminori; Yamamori, Hirotake; Nagasawa, Shuichi; Fukuda, Daiji; Hidaka, Mutsuo

2014-06-01

White noise of dissipationless microwave radio frequency superconducting quantum interference device (RF-SQUID) multiplexers has been experimentally studied to evaluate their readout performance for transition edge sensor (TES) photon counters ranging from near infrared to gamma ray. The characterization has been carried out at 4 K, first to avoid the low-frequency fluctuations present at around 0.1 K, and second, for a feasibility study of readout operation at 4 K for extended applications. To increase the resonant Q at 4 K and maintain low noise SQUID operation, multiplexer chips consisting of niobium nitride (NbN)-based coplanar-waveguide resonators and niobium (Nb)-based RF-SQUIDs have been developed. This hybrid multiplexer exhibited 1 × 104 ≤ Q ≤ 2 × 104 and the square root of spectral density of current noise referred to the SQUID input √SI = 31 pA/√Hz. The former and the latter are factor-of-five and seven improvements from our previous results on Nb-based resonators, respectively. Two-directional readout on the complex plane of the transmission component of scattering matrix S21 enables us to distinguish the flux noise from noise originating from other sources, such as the cryogenic high electron mobility transistor (HEMT) amplifier. Systematic noise measurements with various microwave readout powers PMR make it possible to distinguish the contribution of noise sources within the system as follows: (1) The achieved √SI is dominated by the Nyquist noise from a resistor at 4 K in parallel to the SQUID input coil which is present to prevent microwave leakage to the TES. (2) The next dominant source is either the HEMT-amplifier noise (for small values of PMR) or the quantization noise due to the resolution of 300-K electronics (for large values of PMR). By a decrease of these noise levels to a degree that is achievable by current technology, we predict that the microwave RF-SQUID multiplexer can exhibit √SI ≤ 5 pA/√Hz, i.e., close to √SI of

White noise of Nb-based microwave superconducting quantum interference device multiplexers with NbN coplanar resonators for readout of transition edge sensors

International Nuclear Information System (INIS)

Kohjiro, Satoshi; Hirayama, Fuminori; Yamamori, Hirotake; Nagasawa, Shuichi; Fukuda, Daiji; Hidaka, Mutsuo

2014-01-01

White noise of dissipationless microwave radio frequency superconducting quantum interference device (RF-SQUID) multiplexers has been experimentally studied to evaluate their readout performance for transition edge sensor (TES) photon counters ranging from near infrared to gamma ray. The characterization has been carried out at 4 K, first to avoid the low-frequency fluctuations present at around 0.1 K, and second, for a feasibility study of readout operation at 4 K for extended applications. To increase the resonant Q at 4 K and maintain low noise SQUID operation, multiplexer chips consisting of niobium nitride (NbN)-based coplanar-waveguide resonators and niobium (Nb)-based RF-SQUIDs have been developed. This hybrid multiplexer exhibited 1 × 10 4  ≤ Q ≤ 2 × 10 4 and the square root of spectral density of current noise referred to the SQUID input √S I  = 31 pA/√Hz. The former and the latter are factor-of-five and seven improvements from our previous results on Nb-based resonators, respectively. Two-directional readout on the complex plane of the transmission component of scattering matrix S 21 enables us to distinguish the flux noise from noise originating from other sources, such as the cryogenic high electron mobility transistor (HEMT) amplifier. Systematic noise measurements with various microwave readout powers P MR make it possible to distinguish the contribution of noise sources within the system as follows: (1) The achieved √S I is dominated by the Nyquist noise from a resistor at 4 K in parallel to the SQUID input coil which is present to prevent microwave leakage to the TES. (2) The next dominant source is either the HEMT-amplifier noise (for small values of P MR ) or the quantization noise due to the resolution of 300-K electronics (for large values of P MR ). By a decrease of these noise levels to a degree that is achievable by current technology, we predict that the microwave RF-SQUID multiplexer can exhibit �

Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

Science.gov (United States)

Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro

2017-06-01

Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

International Nuclear Information System (INIS)

Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

2011-01-01

We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

Directory of Open Access Journals (Sweden)

H. MOSBAHI

2014-05-01

Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

International Nuclear Information System (INIS)

Mao Wei; She Wei-Bo; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Hao Yue; Yang Cui

2016-01-01

In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. (paper)

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

International Nuclear Information System (INIS)

Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

2008-01-01

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

2008-07-30

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

Low-frequency noise from large wind turbines

DEFF Research Database (Denmark)

Møller, Henrik; Pedersen, Christian Sejer

2011-01-01

As wind turbines get larger, worries have emerged that the turbine noise would move down in frequency and that the low-frequency noise would cause annoyance for the neighbors. The noise emission from 48 wind turbines with nominal electric power up to 3.6 MW is analyzed and discussed. The relative...... amount of low-frequency noise is higher for large turbines (2.3–3.6 MW) than for small turbines (≤ 2 MW), and the difference is statistically significant. The difference can also be expressed as a downward shift of the spectrum of approximately one-third of an octave. A further shift of similar size...... is suggested for future turbines in the 10-MW range. Due to the air absorption, the higher low-frequency content becomes even more pronounced, when sound pressure levels in relevant neighbor distances are considered. Even when A-weighted levels are considered, a substantial part of the noise is at low...

A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

Science.gov (United States)

Wilkinson, David T.; Page, Lyman

1995-01-01

The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

Science.gov (United States)

Ghaffari, Majid; Orouji, Ali A.; Valinataj, Mojtaba

2017-12-01

In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage ( V BR ) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density ( P max ) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency ( f max ) and cut-off frequency (fT) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density ( P max ) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency ( f T ), the maximum oscillation frequency ( f max ) and the maximum available gain (MAG) of the proposed structure. However, the drain current ( I D ) of the proposed structure is reduced.

Low-frequency noise from large wind turbines.

Science.gov (United States)

Møller, Henrik; Pedersen, Christian Sejer

2011-06-01

As wind turbines get larger, worries have emerged that the turbine noise would move down in frequency and that the low-frequency noise would cause annoyance for the neighbors. The noise emission from 48 wind turbines with nominal electric power up to 3.6 MW is analyzed and discussed. The relative amount of low-frequency noise is higher for large turbines (2.3-3.6 MW) than for small turbines (≤ 2 MW), and the difference is statistically significant. The difference can also be expressed as a downward shift of the spectrum of approximately one-third of an octave. A further shift of similar size is suggested for future turbines in the 10-MW range. Due to the air absorption, the higher low-frequency content becomes even more pronounced, when sound pressure levels in relevant neighbor distances are considered. Even when A-weighted levels are considered, a substantial part of the noise is at low frequencies, and for several of the investigated large turbines, the one-third-octave band with the highest level is at or below 250 Hz. It is thus beyond any doubt that the low-frequency part of the spectrum plays an important role in the noise at the neighbors. © 2011 Acoustical Society of America

Low pressure cooling seal system for a gas turbine engine

Science.gov (United States)

Marra, John J

2014-04-01

A low pressure cooling system for a turbine engine for directing cooling fluids at low pressure, such as at ambient pressure, through at least one cooling fluid supply channel and into a cooling fluid mixing chamber positioned immediately downstream from a row of turbine blades extending radially outward from a rotor assembly to prevent ingestion of hot gases into internal aspects of the rotor assembly. The low pressure cooling system may also include at least one bleed channel that may extend through the rotor assembly and exhaust cooling fluids into the cooling fluid mixing chamber to seal a gap between rotational turbine blades and a downstream, stationary turbine component. Use of ambient pressure cooling fluids by the low pressure cooling system results in tremendous efficiencies by eliminating the need for pressurized cooling fluids for sealing this gap.

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

Science.gov (United States)

Wei, Mao; Wei-Bo, She; Cui, Yang; Jin-Feng, Zhang; Xue-Feng, Zheng; Chong, Wang; Yue, Hao

2016-01-01

In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085, 61334002, 61306017, 61474091, 61574112, and 61574110).

Accurate Prediction of Transimpedances and Equivalent Input Noise Current Densities of Tuned Optical Receiver Front Ends

DEFF Research Database (Denmark)

Liu, Qing Zhong

1991-01-01

Novel analytical expressions have been derived for calculating transimpedances and equivalent input noise current densities of five tuned optical receiver front ends based on PIN diode and MESFETs or HEMTs. Miller's capacitance, which has been omitted in previous studies, has been taken...

Heat Transfer and Cooling Techniques at Low Temperature

CERN Document Server

Baudouy, B

2014-07-17

The first part of this chapter gives an introduction to heat transfer and cooling techniques at low temperature. We review the fundamental laws of heat transfer (conduction, convection and radiation) and give useful data specific to cryogenic conditions (thermal contact resistance, total emissivity of materials and heat transfer correlation in forced or boiling flow for example) used in the design of cooling systems. In the second part, we review the main cooling techniques at low temperature, with or without cryogen, from the simplest ones (bath cooling) to the ones involving the use of cryocoolers without forgetting the cooling flow techniques.

Heat Transfer and Cooling Techniques at Low Temperature

Energy Technology Data Exchange (ETDEWEB)

Baudouy, B [Saclay (France)

2014-07-01

The first part of this chapter gives an introduction to heat transfer and cooling techniques at low temperature. We review the fundamental laws of heat transfer (conduction, convection and radiation) and give useful data specific to cryogenic conditions (thermal contact resistance, total emissivity of materials and heat transfer correlation in forced or boiling flow for example) used in the design of cooling systems. In the second part, we review the main cooling techniques at low temperature, with or without cryogen, from the simplest ones (bath cooling) to the ones involving the use of cryocoolers without forgetting the cooling flow techniques.

Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

International Nuclear Information System (INIS)

Bhattacharjee, A.; Lenka, T. R.

2014-01-01

We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

Calculation of the neutron noise induced by periodic deformations of a large sodium-cooled fast reactor core

International Nuclear Information System (INIS)

Zylbersztejn, F.; Tran, H.N.; Pazsit, I.; Filliatre, P.; Jammes, C.

2014-01-01

The subject of this paper is the calculation of the neutron noise induced by small-amplitude stationary radial variations of the core size (core expansion/compaction, also called core flowering) of a large sodium-cooled fast reactor. The calculations were performed on a realistic model of the European Sodium Fast Reactor (ESFR) core with a thermal output of 3600 MW(thermal), using a multigroup neutron noise simulator. The multigroup cross sections and their fluctuations that represent the core geometry changes for the neutron noise calculations were generated by the code ERANOS. The space and energy dependences of the noise source represented by the core expansion/compaction and the induced neutron noise are calculated and discussed. (authors)

Study on ventilation and noise reduction in the main transformer room in indoor substation

Directory of Open Access Journals (Sweden)

Hu Sheng

2016-01-01

Full Text Available The noise emission should be considered in the ventilation and cooling design for the main transformer room of indoor substation. In this study, based on Soundplan software, effects of four common ventilation and cooling schemes on the cooling and sound insulation were compared. The research showed that the region with low noise requirement, the ventilation could be set on the outer wall or on the door of the main transformer room, while the region with high noise requirement, air inlet muffler or ventilation through the cable interlayer under the main transformer room must be used. All of the four kinds of ventilation schemes, ventilation through the cable interlayer is the best in cooling and noise reduction.

Noise measurements on proximity effect bridges

International Nuclear Information System (INIS)

Decker, S.K.; Mercereau, J.E.

1975-01-01

Audio frequency noise density measurements were performed on weakly superconducting proximity effect bridges on using a cooled transformer and room temperature low noise preamplifier. The noise temperature of the measuring system is approximately 4 0 K for a 0.9 Ω resistor. Noise density was measured as a function of bias current and temperature for the bridges. Excess noise above that expected from Johnson noise for a resistor equal to the dynamic resistance of the bridges was observed in the region near the critical current of the device. At high currents compared to the critical current, the noise density closely approaches that given by Johnson noise

Field plated 0.15 μm GaN HEMTs for millimeter-wave application

International Nuclear Information System (INIS)

Ren Chunjiang; Li Zhonghui; Yu Xuming; Wang Quanhui; Wang Wen; Chen Tangsheng; Zhang Bin

2013-01-01

SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition. Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate. Gate recessing was performed to control the threshold voltage of the devices. The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz. Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%, respectively, for a 0.15 mm gate width device operated at a 24 V drain bias. The developed 0.15 μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development. (semiconductor devices)

Designing and Manufacturing a Noise Controlling Silencer for the Cooling Tower Pump of Sarcheshmeh Copper Power Station

Directory of Open Access Journals (Sweden)

Sajad Zare

2017-08-01

Full Text Available Background One of the most common harmful factors in the workplace is noise. Noise control is a factor beneficial for health and safety in the workplace. Objectives The current study aimed to design and manufacture a silencer for the cooling tower pump of Sarcheshmeh Copper power station in order to control noise. Methods In this study, sound pressure level was measured by the use of a sound level meter (B & K 2260. Measurement was carried out in the light of ISO 1996 standard. After studying technical and acoustic features of the noise source, a dispersive-absorptive silencer was designed to control noise pollution generated by the cooling tower pump of the thermal station. After analyzing the frequencies of sound pressure level and using available data, a cylindrical silencer (with a diameter of 1.5 m and height of 3 m was designed and manufactured. The internal part of the silencer was filled with different columns of absorbent material covered with punched metal. Therefore, the silencer consisted of (1 acoustic diffuser, (2 acoustic chamber, and (3 acoustic channels. Results Measurements showed that, at a distance of 1 m from the source, sound pressure level reduced from 127 dBA before installing the silencer to 79 dBA after the installation, resulting in a reduction of 48 dBA. Conclusions Using a silencer with absorbent material (glass wool is very effective in reducing the noise generated by the pump.

Demonstration of an efficient cooling approach for SBIRS-Low

Science.gov (United States)

Nieczkoski, S. J.; Myers, E. A.

2002-05-01

The Space Based Infrared System-Low (SBIRS-Low) segment is a near-term Air Force program for developing and deploying a constellation of low-earth orbiting observation satellites with gimbaled optics cooled to cryogenic temperatures. The optical system design and requirements present unique challenges that make conventional cooling approaches both complicated and risky. The Cryocooler Interface System (CIS) provides a remote, efficient, and interference-free means of cooling the SBIRS-Low optics. Technology Applications Inc. (TAI), through a two-phase Small Business Innovative Research (SBIR) program with Air Force Research Laboratory (AFRL), has taken the CIS from initial concept feasibility through the design, build, and test of a prototype system. This paper presents the development and demonstration testing of the prototype CIS. Prototype system testing has demonstrated the high efficiency of this cooling approach, making it an attractive option for SBIRS-Low and other sensitive optical and detector systems that require low-impact cryogenic cooling.

New AlGaN/GaN HEMTs employing both a floating gate and a field plate

International Nuclear Information System (INIS)

Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

2010-01-01

We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

International Nuclear Information System (INIS)

Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

2010-01-01

Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

Micromachined Joule-Thomson coolers for cooling low-temperature detectors and electronics

Science.gov (United States)

ter Brake, Marcel; Lerou, P. P. P. M.; Burger, J. F.; Holland, H. J.; Derking, J. H.; Rogalla, H.

2017-11-01

The performance of electronic devices can often be improved by lowering the operating temperature resulting in lower noise and larger speed. Also, new phenomena can be applied at low temperatures, as for instance superconductivity. In order to fully exploit lowtemperature electronic devices, the cryogenic system (cooler plus interface) should be `invisible' to the user. It should be small, low-cost, low-interference, and above all very reliable (long-life). The realization of cryogenic systems fulfilling these requirements is the topic of research of the Cooling and Instrumentation group at the University of Twente. A MEMS-based cold stage was designed and prototypes were realized and tested. The cooler operates on basis of the Joule-Thomson effect. Here, a high-pressure gas expands adiabatically over a flow restriction and thus cools and liquefies. Heat from the environment (e.g., an optical detector) can be absorbed in the evaporation of the liquid. The evaporated working fluid returns to the low-pressure side of the system via a counter-flow heat exchanger. In passing this heat exchanger, it takes up heat from the incoming high-pressure gas that thus is precooled on its way to the restriction. The cold stage consists of a stack of three glass wafers. In the top wafer, a high-pressure channel is etched that ends in a flow restriction with a height of typically 300 nm. An evaporator volume crosses the center wafer into the bottom wafer. This bottom wafer contains the lowpressure channel thus forming a counter-flow heat exchanger. A design aiming at a net cooling power of 10 mW at 96 K and operating with nitrogen as the working fluid was optimized based on the minimization of entropy production. The optimum cold finger measures 28 mm x 2.2 mm x 0.8 mm operating with a nitrogen flow of 1 mg/s at a high pressure of 80 bar and a low pressure of 6 bar. The design and fabrication of the coolers will be discussed along with experimental results.

High-Tc Superconducting Bolometer Noise Measurement Using Low Noise Transformers - Theory and Optimization

Science.gov (United States)

Aslam, Shahid; Jones, Hollis H.

2011-01-01

Care must always be taken when performing noise measurements on high-Tc superconducting materials to ensure that the results are not from the measurement system itself. One situation likely to occur is with low noise transformers. One of the least understood devices, it provides voltage gain for low impedance inputs (< 100 ), e.g., YBaCuO and GdBaCuO thin films, with comparatively lower noise levels than other devices for instance field effect and bipolar junction transistors. An essential point made in this paper is that because of the complex relationships between the transformer ports, input impedance variance alters the transformer s transfer function in particular, the low frequency cutoff shift. The transfer of external and intrinsic transformer noise to the output along with optimization and precautions are treated; all the while, we will cohesively connect the transfer function shift, the load impedance, and the actual noise at the transformer output.

Effects of combined gate and ohmic recess on GaN HEMTs

Directory of Open Access Journals (Sweden)

Sunil Kumar

2016-09-01

Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

Challenges and limitations in retrofitting facilities for low frequency noise

Energy Technology Data Exchange (ETDEWEB)

Wierzba, P. [ATCO Noise Management, Calgary, AB (Canada)

2007-07-01

The trend to revise and increase environmental regulations regarding low frequency noise emissions from oil and gas facilities was discussed. Noise related complaints can often be traced to low frequency noise, which is the unwanted sound with a frequency range falling within 31.5-Hz, 63-Hz, and 125-Hz octave bands. This paper also discussed the challenges and limitations of field retrofits of the facilities aimed at reducing low frequency noise. The main sources of low frequency noise associated with a compression facility are the radiator cooler, engine exhaust and the building envelope. Regulators are paying close attention not only to the overall noise exposure as measured by the A-weighted levels, but also to the quality of noise emitted by the particular frequency spectrum. The Alberta Energy and Utilities Board recently issued Noise Control Directive 38 and made it a requirement to perform low frequency noise impact assessment for permitting of all new energy facilities. Under Directive 38, the low frequency noise assessment is to be performed using the C-weighted scale as a measure in addition to the previously used A-weighted scale. Directive 38 recommends that in order to avoid low frequency noise problems the difference between the C-weighted and A-weighted levels at the residential locations should be lower than 20 dB. This implies that noise should be limited to 60 dBC for Category 1 residences of low dwelling density. Small upgrades and changes can be made to lower low frequency noise emissions. These may include upgrading building wall insulation, providing wall-to-skid isolation system, upgrading the fan blades, or reducing the rpm of the fans. It was concluded that these upgrades should be considered for facilities in close proximity to residential areas. 3 refs., 2 tabs., 7 figs.

Low-frequency excess flux noise in superconducting devices

Energy Technology Data Exchange (ETDEWEB)

Kempf, Sebastian; Ferring, Anna; Fleischmann, Andreas; Enss, Christian [Kirchhoff-Institute for Physics, Heidelberg University (Germany)

2016-07-01

Low-frequency noise is a rather universal phenomenon and appears in physical, chemical, biological or even economical systems. However, there is often very little known about the underlying processes leading to its occurrence. In particular, the origin of low-frequency excess flux noise in superconducting devices has been an unresolved puzzle for many decades. Its existence limits, for example, the coherence time of superconducting quantum bits or makes high-precision measurements of low-frequency signals using SQUIDs rather challenging. Recent experiments suggest that low-frequency excess flux noise in Josephson junction based devices might be caused by the random reversal of interacting spins in surface layer oxides and in the superconductor-substrate interface. Even if it turns out to be generally correct, the underlying physical processes, i.e. the origin of these spins, their physical nature as well as the interaction mechanisms, have not been resolved so far. In this contribution we discuss recent measurements of low-frequency SQUID noise which we performed to investigate the origin of low-frequency excess flux noise in superconducting devices. Within this context we give an overview of our measurement techniques and link our data with present theoretical models and literature data.

Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module

International Nuclear Information System (INIS)

Chou, Po-Chien; Cheng, Stone

2013-01-01

Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and tested an all-GaN-based power module. In a 200 V, 45 A module, each switching element comprises three GaN chips in parallel, each of which includes six 2.1 A AlGaN/GaN-on-Si HEMT cells. The cells are wire-bonded in parallel to scale up the power rating. Static I D -V DS characteristics of the module are experimentally obtained over widely varying base plate temperatures, and a low on-state resistance is obtained at an elevated temperature of 125 °C. The fabricated module has a blocking voltage exceeding 200 V at a reverse-leakage current density below 1 mA/mm. Two standard temperature measurements are made to provide a simple means of determining mean cell temperature in the module. Self-heating in AlGaN/GaN HEMTs is studied by electrical analysis and infrared thermography. Electrical analysis provides fast temperature overviews while infrared thermography reveals temperature behavior in selected active regions. The current distribution among cells was acceptable over the measured operating temperature range. The characterization of electrical performance and mechanical performance confirm the potential use of the packaged module for high-power applications. -- Highlights: • This work proposes the design, development, and testing of all-GaN power module. • We develop module package and determine their thermal and electrical properties. • ID-VDS characteristics are obtained over a wide range of base plate temperatures. • Self-heating in GaN HEMTs is studied by electrical analysis and IR thermography

Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

International Nuclear Information System (INIS)

Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

2011-01-01

Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

Science.gov (United States)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

Science.gov (United States)

Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

2017-06-01

We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages ( V th) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Science.gov (United States)

Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

2017-07-01

Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

Science.gov (United States)

Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

2015-10-01

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Qualitative criteria and thresholds for low noise asphalt mixture design

Science.gov (United States)

Vaitkus, A.; Andriejauskas, T.; Gražulytė, J.; Šernas, O.; Vorobjovas, V.; Kleizienė, R.

2018-05-01

Low noise asphalt pavements are cost efficient and cost effective alternative for road traffic noise mitigation comparing with noise barriers, façade insulation and other known noise mitigation measures. However, design of low noise asphalt mixtures strongly depends on climate and traffic peculiarities of different regions. Severe climate regions face problems related with short durability of low noise asphalt mixtures in terms of considerable negative impact of harsh climate conditions (frost-thaw, large temperature fluctuations, hydrological behaviour, etc.) and traffic (traffic loads, traffic volumes, studded tyres, etc.). Thus there is a need to find balance between mechanical and acoustical durability as well as to ensure adequate pavement skid resistance for road safety purposes. Paper presents analysis of the qualitative criteria and design parameters thresholds of low noise asphalt mixtures. Different asphalt mixture composition materials (grading, aggregate, binder, additives, etc.) and relevant asphalt layer properties (air void content, texture, evenness, degree of compaction, etc.) were investigated and assessed according their suitability for durable and effective low noise pavements. Paper concluded with the overview of requirements, qualitative criteria and thresholds for low noise asphalt mixture design for severe climate regions.

Low-frequency 1/f noise in graphene devices

Science.gov (United States)

Balandin, Alexander A.

2013-08-01

Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.

AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

International Nuclear Information System (INIS)

Leclaire, P; Chenot, S; Cordier, Y; Buchaillot, L; Théron, D; Faucher, M

2014-01-01

In the present work, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown with very thin buffer layers on silicon substrates in view of developing nano electromechanical systems (NEMS) for sensors applications. To ensure transducer operation in the MHz range together with low mechanical stiffness, epitaxial structures with thickness below 1 μm have to be developed. We report on the evolution of the material and electrical properties of AlGaN/GaN HEMTs with thicknesses varying from 2 μm to 0.5 μm. The set of parameters obtained includes in-plane Young modulus of 250 GPa in association with carrier density of 6 × 10 12 cm −2 and mobility above 1000 cm 2  V −1  s −1 . The resulting behavior of demonstration transistors validates these epilayers for electromechanical resonators operation. (paper)

Low noise monolithic CMOS front end electronics

International Nuclear Information System (INIS)

Lutz, G.; Bergmann, H.; Holl, P.; Manfredi, P.F.

1987-01-01

Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

Science.gov (United States)

Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

2017-12-01

We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

Cooling Performance of ALIP according to the Air or Sodium Cooling Type

Energy Technology Data Exchange (ETDEWEB)

Ye, Huee-Youl; Yoon, Jung; Lee, Tae-Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

ALIP pumps the liquid sodium by Lorentz force produced by the interaction of induced current in the liquid metal and their associated magnetic field. Even though the efficiency of the ALIP is very low compared to conventional mechanical pumps, it is very useful due to the absence of moving parts, low noise and vibration level, simplicity of flow rate regulation and maintenance, and high temperature operation capability. Problems in utilization of ALIP concern a countermeasure for elevation of internal temperature of the coil due to joule heating and how to increase magnetic flux density of Na channel gap. The conventional ALIP usually used cooling methods by circulating the air or water. On the other hand, GE-Toshiba developed a double stator pump adopting the sodium-immersed self-cooled type, and it recovered the heat loss in sodium. Therefore, the station load factor of the plant could be reduced. In this study, the cooling performance with cooling types of ALIP is analyzed. We developed thermal analysis models to evaluate the cooling performance of air or sodium cooling type of ALIP. The cooling performance is analyzed for operating parameters and evaluated with cooling type. 1-D and 3-D thermal analysis model for IHTS ALIP was developed, and the cooling performance was analyzed for air or sodium cooling type. The cooling performance for air cooling type was better than sodium cooling type at higher air velocity than 0.2 m/s. Also, the air temperature of below 270 .deg. demonstrated the better cooling performance as compared to sodium.

Transistor design considerations for low-noise preamplifiers

International Nuclear Information System (INIS)

Fair, R.B.

1976-01-01

A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ultimate limits on performance are evaluated in terms of the g/sub m//C/sub i/ ratio and the gate leakage current to minimize the noise sources. Si bipolar transistors and the future prospects of GaAs, Si and InAs MISFETs are discussed, and performance is compared to FETs currently being used in low-noise preamplifiers

Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

International Nuclear Information System (INIS)

Cheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E.Y.

2013-01-01

This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. -- Highlights: ► An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ► The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ► The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ► This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si

Low dose CT simulation using experimental noise model

Energy Technology Data Exchange (ETDEWEB)

Nakanishi, Satori; Zamyatin, Alexander A. [Toshiba Medical Systems Corporation, Tochigi, Otawarashi (Japan); Silver, Michael D. [Toshiba Medical Research Institute, Vernon Hills, IL (United States)

2011-07-01

We suggest a method to obtain system noise model experimentally without relying on assumptions on statistical distribution of the noise; also, knowledge of DAS gain and electronic noise level are not required. Evaluation with ultra-low dose CT data (5 mAs) shows good match between simulated and real data noise. (orig.)

60Co gamma radiation effect on AlGaN//AlN/GaN HEMT devices

International Nuclear Information System (INIS)

Wang Yanping; Luo Yinhong; Wang Wei; Zhang Keying; Guo Hongxia; Guo Xiaoqiang; Wang Yuanming

2013-01-01

The testing techniques and experimental methods of the 60 Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained. (authors)

The Analysis of Low Noise Protection Barriers Influence on Tram Traffic Noise Levels

Directory of Open Access Journals (Sweden)

Ahac Maja

2013-07-01

Full Text Available The paper describes the analysis of tram traffic noise situation in residential areas in the vicinity of Drzic Avenue, one of the major routes between the northern and southern part of the Croatian capital city Zagreb, and the effect of low barriers placed by the tracks on tram noise mitigation. In order to evaluate the effect of planned protection measure, noise models were produced and verified with short-term field measurements. Calculations were conducted by means of noise prediction software, using European interim noise prediction method and 3D model of analyzed area. Finally, the results of noise calculations for existing tram traffic situation and planned measure of protection are presented on noise maps.

EUDP Project: Low Noise Airfoil - Final Report

DEFF Research Database (Denmark)

This document summarizes the scientific results achieved during the EUDP-funded project `Low-Noise Airfoil'. The goals of this project are, on one side to develop a measurement technique that permits the evaluation of trailing edge noise in a classical aerodynamic wind tunnel, and on the other side...... to develop and implement a design procedure to manufacture airfoil profiles with low noise emission. The project involved two experimental campaigns: one in the LM Wind Power wind tunnel, a classical aerodynamic wind tunnel, in Lunderskov (DK), the second one in the Virginia Tech Stability Wind Tunnel....... In particular, the so-called TNO trailing edge noise model could be significantly improved by introducing turbulence anisotropy in its formulation, as well as the influence of the boundary layer mean pressure gradient. This two characteristics are inherent to airfoil flows but were neglected in the original...

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors

Directory of Open Access Journals (Sweden)

Shoji Kawahito

2016-11-01

Full Text Available This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs. This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC. The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median: 0.29 e−rms when compared with the CMS gain of two (2.4 e−rms, or 16 (1.1 e−rms.

A programmable ultra-low noise X-band exciter.

Science.gov (United States)

MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

2001-07-01

A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

Obtaining and Estimating Low Noise Floors in Vibration Sensors

DEFF Research Database (Denmark)

Brincker, Rune; Larsen, Jesper Abildgaard

2007-01-01

For some applications like seismic applications and measuring ambient vibrations in structures, it is essential that the noise floors of the sensors and other system components are low and known to the user. Some of the most important noise sources are reviewed and it is discussed how the sensor...... can be designed in order to obtain a low noise floor. Techniques to estimate the noise floors for sensors are reviewed and are demonstrated on a commercial commonly used sensor for vibration testing. It is illustrated how the noise floor can be calculated using the coherence between simultaneous...

Twenty-two cases of low-frequency noise complaints

DEFF Research Database (Denmark)

Pedersen, Christian Sejer; Møller, Henrik; Persson-Waye, Kerstin

2006-01-01

In Denmark and in other industrialized countries there are cases where people complain about annoying low-frequency or infrasonic noise in their homes. Besides noise annoyance people often report other adverse effects such as insomnia, headache, lack of concentration etc. In many cases the noise...

Measurement and analysis of the noise radiated by low Mach numbers centrifugal blowers

Science.gov (United States)

Yeager, D. M.; Lauchle, G. C.

1987-11-01

The broad band, aerodynamically generated noise in low tip-speed Mach number, centrifugal air moving devices is investigated. An interdisciplinary approach was taken which involved investigation of the aerodynamic and acoustic fields, and their mutual relationship. The noise generation process was studied using two experimental vehicles: (1) a scale model of a homologous family of centrifugal blowers typical of those used to cool computer and business equipment, and (2) a single blade from a centrifugal blower impeller which was placed in a known, controllable flow field. The radiation characteristics of the model blower were investigated by measuring the acoustic intensity distribution near the blower inlet and comparing it with the intensity near the inlet to an axial flow fan. Aerodynamic studies of the flow field in the inlet and at the discharge to the rotating impeller were used to assess the mean flow distribution through the impeller blade channels and to identify regions of excessive turbulence near the rotating blade row. New frequency-domain expressions for the correlation area and dipole source strength per unit area on a surface immersed in turbulence were developed which can be used to characterize the noise generation process over a rigid surface immersed in turbulence. An investigation of the noise radiated from the single, isolated airfoil (impeller blade) was performed using modern correlation and spectral analysis techniques.

Ultra-low-noise transition edge sensors for the SAFARI L-band on SPICA

Science.gov (United States)

Goldie, D. J.; Gao, J. R.; Glowacka, D. M.; Griffin, D. K.; Hijmering, R.; Khosropanah, P.; Jackson, B. D.; Mauskopf, P. D.; Morozov, D.; Murphy, J. A.; Ridder, M.; Trappe, N.; O'Sullivan, C.; Withington, S.

2012-09-01

The Far-Infrared Fourier transform spectrometer instrument SAFARI-SPICA which will operate with cooled optics in a low-background space environment requires ultra-sensitive detector arrays with high optical coupling efficiencies over extremely wide bandwidths. In earlier papers we described the design, fabrication and performance of ultra-low-noise Transition Edge Sensors (TESs) operated close to 100mk having dark Noise Equivalent Powers (NEPs) of order 4 × 10-19W/√Hz close to the phonon noise limit and an improvement of two orders of magnitude over TESs for ground-based applications. Here we describe the design, fabrication and testing of 388-element arrays of MoAu TESs integrated with far-infrared absorbers and optical coupling structures in a geometry appropriate for the SAFARI L-band (110 - 210 μm). The measured performance shows intrinsic response time τ ~ 11ms and saturation powers of order 10 fW, and a dark noise equivalent powers of order 7 × 10-19W/√Hz. The 100 × 100μm2 MoAu TESs have transition temperatures of order 110mK and are coupled to 320×320μm2 thin-film β-phase Ta absorbers to provide impedance matching to the incoming fields. We describe results of dark tests (i.e without optical power) to determine intrinsic pixel characteristics and their uniformity, and measurements of the optical performance of representative pixels operated with flat back-shorts coupled to pyramidal horn arrays. The measured and modeled optical efficiency is dominated by the 95Ω sheet resistance of the Ta absorbers, indicating a clear route to achieve the required performance in these ultra-sensitive detectors.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

Science.gov (United States)

Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

Science.gov (United States)

Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

Cross correlation measurement of low frequency conductivity noise

Science.gov (United States)

Jain, Aditya Kumar; Nigudkar, Himanshu; Chakraborti, Himadri; Udupa, Aditi; Gupta, Kantimay Das

2018-04-01

In order to study the low frequency noise(1/f noise)an experimental technique based on cross correlation of two channels is presented. In this method the device under test (DUT)is connected to the two independently powered preamplifiers in parallel. The amplified signals from the two preamplifiers are fed to two channels of a digitizer. Subsequent data processing largelyeliminates the uncorrelated noise of the two channels. This method is tested for various commercial carbon/metal film resistors by measuring equilibrium thermal noise (4kBTR). The method is then modified to study the non-equilibrium low frequency noise of heterostructure samples using fiveprobe configuration. Five contact probes allow two parts of the sample to become two arms of a balanced bridge. This configuration helps in suppressing the effect of power supply fluctuations, bath temperature fluctuations and contact resistances.

Quantum and Private Capacities of Low-Noise Channels

Science.gov (United States)

Leditzky, Felix; Leung, Debbie; Smith, Graeme

2018-04-01

We determine both the quantum and the private capacities of low-noise quantum channels to leading orders in the channel's distance to the perfect channel. It has been an open problem for more than 20 yr to determine the capacities of some of these low-noise channels such as the depolarizing channel. We also show that both capacities are equal to the single-letter coherent information of the channel, again to leading orders. We thus find that, in the low-noise regime, superadditivity and degenerate codes have a negligible benefit for the quantum capacity, and shielding does not improve the private capacity beyond the quantum capacity, in stark contrast to the situation when noisier channels are considered.

Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Koo, Sang-Mo; Kang, Min-Seok

2014-01-01

Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

2014-10-15

Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

Science.gov (United States)

Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

2017-09-01

In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

Low Cost/Low Noise Variable Pitch Ducted Fan, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — ACI proposes a design for a Propulsor (Low Cost/Low Noise Variable Pitch Ducted Fan) that has wide application in all sectors of Aviation. Propulsor hardware of this...

An accurate and simple large signal model of HEMT

DEFF Research Database (Denmark)

Liu, Qing

1989-01-01

A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid...

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

NARCIS (Netherlands)

Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

2008-01-01

We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

International Nuclear Information System (INIS)

Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

2012-01-01

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

2013-01-01

The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

The effects of low frequency noise on mental performance and annoyance.

Science.gov (United States)

Alimohammadi, Iraj; Sandrock, Stephan; Gohari, Mahmoud Reza

2013-08-01

Low frequency noise (LFN) as background noise in urban and work environments is emitted from many artificial sources such as road vehicles, aircraft, and air movement machinery including wind turbines, compressors, and ventilation or air conditioning units. In addition to objective effects, LFN could also cause noise annoyance and influence mental performance; however, there are no homogenous findings regarding this issue. The purpose of this research was to study the effects of LFN on mental performance and annoyance, as well as to consider the role of extraversion and neuroticism on the issue. This study was conducted on 90 students of Iran University of Medical Sciences (54 males and 36 females). The mean age of the students was 23.46 years (SD = 1.97). Personality traits and noise annoyance were measured by using Eysenck Personality Inventory and a 12-scale self-reported questionnaire, respectively. Stroop and Cognitrone computerized tests measured mental performance of participants each exposed to 50 and 70 dBA of LFN and silence. LFNs were produced by Cool Edit Pro 2.1 software. There was no significant difference between mental performance parameters under 50 and 70 dBA of LFN, whereas there were significant differences between most mental performance parameters in quiet and under LFN (50 and 70 dBA). This research showed that LFN, compared to silence, increased the accuracy and the test performance speed (p  0.01). Introverts conducted the tests faster than extraverts (p mental performance. It seems that LFN has increased arousal level of participants, and extraversion has a considerable impact on mental performance.

A Tunable Low Noise Active Bandpass Filter Using a Noise Canceling Technique

OpenAIRE

Soltani, N.

2016-01-01

A monolithic tunable low noise active bandpass filter is presented in this study. Biasing voltages can control the center frequency and quality factor. By keeping the gain constant, the center frequency shift is 300 MHz. The quality factor can range from 90 to 290 at the center frequency. By using a noise cancelling circuit, noise is kept lower than 2.8 dB. The proposed filter is designed using MMIC technology with a center frequency of 2.4 GHz and a power consumption of 180 mW. ED02AH techno...

Scaling properties of the aerodynamic noise generated by low-speed fans

Science.gov (United States)

Canepa, Edward; Cattanei, Andrea; Mazzocut Zecchin, Fabio

2017-11-01

The spectral decomposition algorithm presented in the paper may be applied to selected parts of the SPL spectrum, i.e. to specific noise generating mechanisms. It yields the propagation and the generation functions, and indeed the Mach number scaling exponent associated with each mechanism as a function of the Strouhal number. The input data are SPL spectra obtained from measurements taken during speed ramps. Firstly, the basic theory and the implemented algorithm are described. Then, the behaviour of the new method is analysed with reference to numerically generated spectral data and the results are compared with the ones of an existing method based on the assumption that the scaling exponent is constant. Guidelines for the employment of both methods are provided. Finally, the method is applied to measurements taken on a cooling fan mounted on a test plenum designed following the ISO 10302 standards. The most common noise generating mechanisms are present and attention is focused on the low-frequency part of the spectrum, where the mechanisms are superposed. Generally, both propagation and generation functions are determined with better accuracy than the scaling exponent, whose values are usually consistent with expectations based on coherence and compactness of the acoustic sources. For periodic noise, the computed exponent is less accurate, as the related SPL data set has usually a limited size. The scaling exponent is very sensitive to the details of the experimental data, e.g. to slight inconsistencies or random errors.

A capacitor cross-coupled common-gate low-noise amplifier

NARCIS (Netherlands)

Zhuo, W.; Li, X.; Shekhar, S.; Embabi, S.H.K.; Pineda de Gyvez, J.; Allstot, D.J.; Sanchez-Sinencio, E.

2005-01-01

The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET fT, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

Science.gov (United States)

Nirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.

2018-01-01

In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain current model is derived. This model is useful to correlate the impact of intrinsic capacitance and conductance on drain current collapse. The proposed device suppressed the current collapse phenomena by 10% compared with the conventional AlGaN/GaN HEMT. Moreover, the DC characteristics of the simulated device shows a drain current of 900 mA/mm, breakdown voltage of 291 V and transconductance of 175 mS/mm. Besides, the intrinsic capacitance and conductance parameters are extracted and its impact on drain current is analysed. Finally, the simulation results obtained were in compliance with the derived mathematical model of AlGaN/GaN HEMT.

Ultra Low Noise Poroelastic Road Surfaces

Directory of Open Access Journals (Sweden)

Jerzy A. Ejsmont

2016-04-01

Full Text Available Noise is one of the most important environmental problems related to road traffic. During the last decades, the noise emitted by the engines and powertrains of vehicles was greatly reduced and tires became a clearly dominant noise source. The article describes the concept of low noise poroelastic road surfaces that are composed of mineral and rubber aggregate bound by polyurethane resin. Those surfaces have a porous structure and are much more flexible than standard asphalt or cement concrete pavements due to high content of rubber aggregate and elastic binder. Measurements performed in several European countries indicate that such surfaces decrease tire/road noise between 7 dB and 12 dB with respect to reference surfaces such as dense asphalt concrete or stone matrix asphalt. Furthermore, poroelastic road surfaces ascertain the rolling resistance of car tires, which is comparable to classic pavements. One of the unforeseen properties of the poroelastic road surfaces is their ability to decrease the risks related to car fires with fuel spills. The article presents the road and laboratory results of noise, rolling resistance, and fire tests performed on a few types of poroelastic road surfaces.

Low-Frequency Noise in High-T Superconductor Josephson Junctions, Squids, and Magnetometers.

Science.gov (United States)

Miklich, Andrew Hostetler

The design and performance of high-T_ {rm c} dc superconducting quantum interference devices (SQUIDs), the junctions that comprise them, and magnetometers made from them are described, with special attention paid to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUIDs. This noise suggests a poorly connected interface at the grain boundary junction. SQUIDs from bicrystal junctions, in contrast, have levels of critical current noise that are controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5times 10^{-30} J Hz^ {-1} at 1 Hz is reported. Magnetometers in which a (9 mm)^2 pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz^{-1/2} down to frequencies below 1 Hz, improving to 39 fT Hz^{-1/2} at 1 Hz with the addition of a 50 mm-diameter single-turn flux transformer. Although the performance of these devices is sufficient for single -channel biomagnetometry or geophysical studies, their relatively poor coupling to the pickup loop makes it difficult to satisfy the competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz^{-1/2} in the white noise region is reported with a (10 mm) ^2 pickup loop. However, additional 1/f noise from the processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz^ {-1/2}. High-T_{ rm c} SQUIDs are shown to exhibit additional 1/f noise when they are cooled in a nonzero static magnetic field because of the additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05 mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Das, Palash; Biswas, Dhrubes

2014-01-01

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT

Measurement of low-frequency noise in rooms

DEFF Research Database (Denmark)

Pedersen, Steffen; Møller, Henrik; Persson-Waye, Kerstin

2006-01-01

Measurement of low-frequency noise in rooms is problematic due to standing wave patterns. The spatial variation in the sound pressure level can typically be as much as 20-30 dB. For assessment of annoyance from low-frequency noise in dwellings, it is important to measure a level close...... rooms. The sound pressure level was measured 1) in three-dimensional corners and 2) according to current Swedish and Danish measurement methods. Furthermore, the entire sound pressure distributions were measured by scanning. The Swedish and Danish measurement methods include a corner measurement...... to the highest level present in a room, rather than a room average level. In order to ensure representative noise measurements, different positions were investigated based on theoretical considerations and observations from numerical room simulations. In addition measurements were performed in three different...

Low noise InP-based MMIC receivers for W-band

Science.gov (United States)

Leonard, Regis F.

1991-01-01

A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

International Nuclear Information System (INIS)

Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

2016-01-01

A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Krost, Alois; Hauser, Marcus J B

2014-01-01

The dynamics of cells of the slime mould Physarum polycephalum are investigated with a planar AlGaN/GaN high electron mobility transistor (HEMT) without any gate metallization. The source–drain contacts are used in a two-electrode arrangement whereas the free gate surface area is occupied by the Physarum cell. In order to understand the measured signals, basic properties of the interface between the cell and the HEMT surface were analysed by impedance spectroscopy. At high frequencies the interface impedance is governed by the conductance of the cell due to a direct current through the HEMT/cell interface. The locomotive dynamics of Physarum were recorded by the source–drain impedance at 10 kHz in combination with simultaneous video imaging that monitored the degree of occupancy of the HEMT surface by the cell. A precise correlation was found between the impedance and the coverage of the HEMT surface by the cell. It is observed that the entire region between the contacts is sensitive to the cell activity. Well-resolved cellular oscillations were observed for all measured parameters. Their periods corresponded to the typical periods of the intracellular shuttle streaming of protoplasma in Physarum. This demonstrates that high-frequency impedance measurements with AlGaN/GaN HEMT structures are well suited for the analysis of both the static parts of single Physarum cells as well as of their dynamic behaviour, such as their expansion and motility. (paper)

Characterization and Impact of Low Frequency Wind Turbine Noise Emissions

Science.gov (United States)

Finch, James

Wind turbine noise is a complex issue that requires due diligence to minimize any potential impact on quality of life. This study enhances existing knowledge of wind turbine noise through focused analyses of downwind sound propagation, directionality, and the low frequency component of the noise. Measurements were conducted at four wind speeds according to a design of experiments at incremental distances and angles. Wind turbine noise is shown to be highly directional, while downwind sound propagation is spherical with limited ground absorption. The noise is found to have a significant low frequency component that is largely independent of wind speed over the 20-250 Hz range. The generated low frequency noise is shown to be audible above 40 Hz at the MOE setback distance of 550 m. Infrasound levels exhibit higher dependency on wind speed, but remain below audible levels up to 15 m/s.

GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

Directory of Open Access Journals (Sweden)

Chao-Wei Lin

2012-01-01

Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

A Tunable Low Noise Active Bandpass Filter Using a Noise Canceling Technique

Directory of Open Access Journals (Sweden)

N. Soltani

2016-12-01

Full Text Available A monolithic tunable low noise active bandpass filter is presented in this study. Biasing voltages can control the center frequency and quality factor. By keeping the gain constant, the center frequency shift is 300 MHz. The quality factor can range from 90 to 290 at the center frequency. By using a noise cancelling circuit, noise is kept lower than 2.8 dB. The proposed filter is designed using MMIC technology with a center frequency of 2.4 GHz and a power consumption of 180 mW. ED02AH technology is used to simulate the circuit elements.

Liquid helium-cooled MOSFET preamplifier for use with astronomical bolometer

Science.gov (United States)

Goebel, J. H.

1977-01-01

A liquid helium-cooled p-channel enhancement mode MOSFET, the 3N167, is found to have sufficiently low noise for use as a preamplifier with helium-cooled bolometers that are used in infrared astronomy. Its characteristics at 300, 77, and 4.2 K are presented. It is also shown to have useful application with certain photoconductive and photovoltaic infrared detectors.

Low Alloy Steel Structures After Welding with Micro-Jet Cooling

Directory of Open Access Journals (Sweden)

Węgrzyn T.

2017-03-01

Full Text Available The paper focuses on low alloy steel after innovate welding method with micro-jet cooling. Weld metal deposit (WMD was carried out for welding and for MIG and MAG welding with micro-jet cooling. This method is very promising mainly due to the high amount of AF (acicular ferrite and low amount of MAC (self-tempered martensite, retained austenite, carbide phases in WMD. That structure corresponds with very good mechanical properties, ie. high impact toughness of welds at low temperature. Micro-jet cooling after welding can find serious application in automotive industry very soon. Until that moment only argon, helium and nitrogen were tested as micro-jet gases. In that paper first time various gas mixtures (gas mixtures Ar-CO2 were tested for micro-jet cooling after welding.

Metal oxide, Group V-VI chalcogenides and GaN/AlGaN photodetectors

Science.gov (United States)

Hasan, Md. Rezaul

. Position of gate pad defined the center point of the image without tilting the image as the geometry of the gate pads were parallel to each other. And there was no effect of gate pad bonding wire orientation because of the larger width of gate pads. For the GaN/AlGaNHEMT, the effect of Al mole fraction in AlGaN layer and the effect of gate oxide on the DC and low frequency noise characterization was studied. MOSHEMT with SiO2 improved the Id(on)/I d(off) ratio up to more than 8 orders, while it is only 10 times in conventional HEMT. It was shown that the gate leakage and isolation leakage suppression efficiency improved dramatically with the oxide. Subthreshold swing (SS) of MOS-HEMTs with different Al mole fraction (from 20% to 35%) vary slightly from 72 mV/decade to 79 mV/decade, but the conventional GaN/AlGaN HEMT showed SS of 2.4V/decade. Low frequency noise study revealed the difference in transport mechanism between HEMT and MOS-HEMTs. By using Carrier Number Fluctuation (CNF) model on the measured data, it was found that the noise is predominantly coming from the surface states. While generation-recombination is very prominent in conventional HEMT, it is very weak and insignificant in both MOS-HEMTs at much higher frequencies. This study reveals that very high number of surface states assisting the tunneling in schottky/AlGaN barrier is responsible for unusually high leakage and higher noise level in conventional HEMT. Leakage level is improved from mA/mm range for HEMT to pA/mm range for MOS-HEMTs. Leakage suppression improvement and minimization of noise level can be mainly attributed to high quality SiO2. Hooge's constant was in the order of 5-6x10-3 in MOS-HEMTs, which is 5x10 -2 for conventional HEMT indicating much lower noise level in the MOS-HEMTs. (Abstract shortened by ProQuest.).

Measurement and Analysis of the Noise Radiated by Low Mach Number Centrifugal Blowers.

Science.gov (United States)

Yeager, David Marvin

An investigation was performed of the broad band, aerodynamically generated noise in low tip-speed Mach number, centrifugal air moving devices. An interdisciplinary experimental approach was taken which involved investigation of the aerodynamic and acoustic fields, and their mutual relationship. The noise generation process was studied using two experimental vehicles: (1) a scale model of a homologous family of centrifugal blowers typical of those used to cool computer and business equipment, and (2) a single blade from a centrifugal blower impeller placed in a known, controllable flow field. The radiation characteristics of the model blower were investigated by measuring the acoustic intensity distribution near the blower inlet and comparing it with the intensity near the inlet to an axial flow fan. Results showed that the centrifugal blower is a distributed, random noise source, unlike an axial fan which exhibited the effects of a coherent, interacting source distribution. Aerodynamic studies of the flow field in the inlet and at the discharge to the rotating impeller were used to assess the mean flow distribution through the impeller blade channels and to identify regions of excessive turbulence near the rotating blade row. Both circumferential and spanwise mean flow nonuniformities were identified along with a region of increased turbulence just downstream of the scroll cutoff. The fluid incidence angle, normally taken as an indicator of blower performance, was estimated from mean flow data as deviating considerably from an ideal impeller design. An investigation of the noise radiated from the single, isolated airfoil was performed using modern correlation and spectral analysis techniques. Radiation from the single blade in flow was characterized using newly developed expressions for the correlation area and the dipole source strength per unit area, and from the relationship between the blade surface pressure and the incident turbulent flow field. Results

Low-frequency noise in high-(Tc) superconductor Josephson junctions, SQUIDs, and magnetometers

Science.gov (United States)

Miklich, A. H.

1994-05-01

Design and performance of high-T(sub c) dc superconducting quantum interference devices (SQUID's), junctions that comprise them, and magnetometers made from them are described, with attention to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUID's; this suggests a poorly connected interface at the grain boundary junction. SQUID's from bicrystal junctions have levels of critical current noise controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5 x 10(exp -30) J Hz(exp -1) at 1 Hz is reported. Magnetometers in which a (9 mm)(exp 2) pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz(exp -1/2) down to frequencies below 1 Hz, improving to 39 fT Hz(exp -1/2) at 1 Hz with the addition of a 50mm-diameter single-turn flux transformer. Poor coupling to pickup loop makes it difficult to satisfy competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz(exp -1/2) in the white noise region is reported with a (10 mm)(exp 2) pickup loop. However, additional 1/f noise from processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz(exp -1/2). High-T(sub c) SQUID's exhibit additional 1/f noise when cooled in a nonzero static magnetic field because of additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution of 9.2 pV Hz(exp -1/2) at 10 Hz (24 pV Hz(exp -1/2) at 1 Hz) is described.

Radiative cooling and broadband phenomenon in low-frequency waves

Institute of Scientific and Technical Information of China (English)

无

2000-01-01

In this paper, we analyze the effects of radiative cooling on the pure baroclinic low-frequency waves under the approximation of equatorial -plane and semi-geostrophic condition. The results show that radiative cooling does not, exclusively, provide the damping effects on the development of low-frequency waves. Under the delicate radiative-convective equilibrium, radiative effects will alter the phase speed and wave period, and bring about the broadband of phase velocity and wave period by adjusting the vertical profiles of diabatic heating. when the intensity of diabatic heating is moderate and appropriate, it is conductive to the development and sustaining of the low-frequency waves and their broadband phenomena, not the larger, the better. The radiative cooling cannot be neglected in order to reach the moderate and appropriate intensity of diabatic heating.

Passive and low energy cooling techniques for the Czech Republic

NARCIS (Netherlands)

Lain, M.; Hensen, J.L.M.; Santamouris, M.

2005-01-01

This paper deals with the applicability of passive and low energy cooling technologies in the Czech Republic. The work includes climate analysis as well as buildings and systems analysis in order to estimate the potential of passive and low energy cooling technologies. The latter is based on case

NASA's Pursuit of Low-Noise Propulsion for Low-Boom Commercial Supersonic Vehicles

Science.gov (United States)

Bridges, James; Brown, Clifford A.; Seidel, Jonathan A.

2018-01-01

Since 2006, when the Fundamental Aeronautics Program was instituted within NASA's Aeronautics Mission Directorate, there has been a Project looking at the technical barriers to commercial supersonic flight. Among the barriers is the noise produced by aircraft during landing and takeoff. Over the years that followed, research was carried out at NASA aeronautics research centers, often in collaboration with academia and industry, addressing the problem. In 2013, a high-level milestone was established, described as a Technical Challenge, with the objective of demonstrating the feasibility of a low-boom supersonic airliner that could meet current airport noise regulations. The Technical Challenge was formally called "Low Noise Propulsion for Low Boom Aircraft", and was completed in late 2016. This paper reports the technical findings from this Technical Challenge, reaching back almost 10 years to review the technologies and tools that were developed along the way. It also discusses the final aircraft configuration and propulsion systems required for a supersonic civilian aircraft to meet noise regulations using the technologies available today. Finally, the paper documents the model-scale tests that validated the acoustic performance of the study aircraft.

Effects on Performance and Work Quality due to Low Frequency Ventilation Noise

Science.gov (United States)

Persson Waye, K.; Rylander, R.; Benton, S.; Leventhall, H. G.

1997-08-01

A pilot study was carried out to assess method evaluating effects of low frequency noise on performance. Of special interest was to study objective and subjective effects over time. Two ventilation noises were used, one of a predominantly mid frequency character and the other of a predominantly low frequency character. Both had an NC value of 35. For the study, 50 students were recruited and 30 selected on the basis of subjective reports of pressure on the eardrum after exposure to a low frequency noise. Of these, 14 randomly selected subjects aged 21 and 34 took part. The subjects performed three computerized cognitive tests in the mid frequency or the low frequency noise condition alternatively. Tests I and II were performed together with a secondary task.Questionnaires were used to evaluate subjective symptoms, effects on mood and estimated interference with the test results due to temperature, light and noise. The results showed that the subjective estimations of noise interference with performance were higher for the low frequency noise (psocial orientation (pstudied. The results further indicate that the NC curves do not fully assess the negative effects of low frequency noise on work performance.

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

International Nuclear Information System (INIS)

Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

2011-01-01

A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

2011-01-01

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, V(DS) = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

Directory of Open Access Journals (Sweden)

Taizoh Sadoh

2011-03-01

Full Text Available The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

Justification of the evaluation indicators and the criteria of the technical systems of air cooling

International Nuclear Information System (INIS)

Saibov, A.A.

2008-01-01

This article is dedicated to then issues of optimal evaluation of the air cooling systems of diesel motors. The scholars are proposing the major lack of then diesel motors that are cooling with the air of their big size, the high level of the noise, their low thermal heat capacity of the cooling air and low effectiveness of cooling system. On the basis of the various analysis and discussions the author is looking at the reasons of these lack in not having the indicators that could be the actual and optimal systems of the cooling air criteria

The Majorana Low-noise Low-background Front-end Electronics

Science.gov (United States)

Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Combs, D. C.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, J.; MacMullin, S.; Martin, R. D.; Meijer, S.; Mertens, S.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Suriano, A. M.; Thompson, J.; Timkin, V.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Young, A. R.; Yu, C.-H.; Yumatov, V.

The MAJORANA DEMONSTRATOR will search for the neutrinoless double beta decay (ββ(0ν)) of the isotope 76Ge with a mixed array of enriched and natural germanium detectors. In view of the next generation of tonne-scale germanium-based ββ(0ν)-decay searches, a major goal of the MAJORANA DEMONSTRATOR is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the 76Ge ββ(0ν)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolution performances. We present here the low-noise low- background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the MAJORANA DEMONSTRATOR. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.

Low-noise audio amplifiers and preamplifier for use with intrinsic thermocouples

International Nuclear Information System (INIS)

Langner, G.C.; Sachs, R.D.; Stewart, F.L.

1979-03-01

Two simple, low-noise audio amplifiers and one low-noise preamplifier for use with intrinsic thermocouples were designed, built, and tested. The amplifiers and the preamplifier have different front end designs. One amplifier uses ultralow-noise operational amplifiers; the other amplifier uses a hybrid component. The preamplifier uses ultralow-noise discrete components. The amplifiers' equivalent noise inputs, at maximum gain, are 4.09 nV and 50 nV; the preamplifier's input is 4.05 μV. Their bandwidths are 15 600 Hz, 550 Hz, and 174 kHz, respectively. the amplifiers' equivalent noise inputs were measured from approx. 0 to 100 Hz, whereas the preamplifier's equivalent noise input was measured from approx. 0 to 174 kHz

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Science.gov (United States)

Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2016-12-01

A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

International Nuclear Information System (INIS)

Li, Baikui; Tang, Xi; Chen, Kevin J.

2015-01-01

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

Measuring low-frequency noise indoors

DEFF Research Database (Denmark)

Pedersen, Steffen; Møller, Henrik; Persson-Waye, Kerstin

2008-01-01

that is exceeded in 10% of the volume of a room (L10) is proposed as a rational and objective target for a measurement method. In Sweden and Denmark rules exist for measuring low-frequency noise indoors. The performance of these procedures was investigated in three rooms. The results from the Swedish method were...

A Low Noise Electronic Circuit

NARCIS (Netherlands)

Annema, Anne J.; Leenaerts, Dominicus M.W.; de Vreede, Petrus W.H.

2002-01-01

An electronic circuit, which can be used as a Low Noise Amplifier (LNA), comprises two complementary Field Effect Transistors (M1, M2; M5, M6), each having a gate, a source and a drain. The gates are connected together as a common input terminal, and the drains are connected together as a

Jet Propulsion Laboratory/NASA Lewis Research Center space qualified hybrid high temperature superconducting/semiconducting 7.4 GHz low-noise downconverter for NRL HTSSE-II program

International Nuclear Information System (INIS)

Javadi, H.H.S.; Bowen, J.G.; Rascoe, D.L.; Chorey, C.M.

1996-01-01

A deep space satellite downconverter receiver was proposed by Jet Propulsion Laboratory (JPL) and NASA Lewis Research Center (LeRC) for the Naval Research Laboratory's (NRL) high temperature superconductivity space experiment, phase-II (HTSSE-II) program. Space qualified low-noise cryogenic downconverter receivers utilizing thin-film high temperature superconducting (HTS) passive circuitry and semiconductor active devices were developed and delivered to NRL. The downconverter consists of an HTS preselect filter, a cryogenic low-noise amplifier, a cryogenic mixer, and a cryogenic oscillator with an HTS resonator. HTS components were inserted as the front-end filter and the local oscillator resonator for their superior 77 K performance over the conventional components. The semiconducting low noise amplifier also benefited from cooling to 77 K. The mixer was designed specifically for cryogenic applications and provided low conversion loss and low power consumption. In addition to an engineering model, two space qualified units (qualification, flight) were built and delivered to NRL. Manufacturing, integration and test of the space qualified downconverters adhered to the requirements of JPL class-D space instruments and partially to MIL-STD-883D specifications. The qualification unit has ∼50 K system noise temperature which is a factor of three better than a conventional downconverter at room temperature

Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

Science.gov (United States)

Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

2016-02-23

We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO₂ and 15 ppm-NH₃ is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

The sensitivity research of multiparameter biosensors based on HEMT by the mathematic modeling method

Science.gov (United States)

Tikhomirov, V. G.; Gudkov, A. G.; Agasieva, S. V.; Gorlacheva, E. N.; Shashurin, V. D.; Zybin, A. A.; Evseenkov, A. S.; Parnes, Y. M.

2017-11-01

The numerical impact modeling of some external effects on the CVC of biosensors based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure surface in the gate region and to start the process of directed construction optimization of the biosensors based on AlGaN/GaN HEMT with the aim of improving their performance. The calculation of the drain current of the biosensor construction was carried out to confirm the reliability of the developed mathematical model and obtained results.

A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

Science.gov (United States)

2015-07-01

A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs Andong Huang1, 2, ZhengZhong2, 3, and Yongxin Guo2, 3...Suzhou Research Institute, Suzhou, China Abstract — A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is...parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges

Noise performance of the multiwavelength sub/millimeter inductance camera (MUSIC) detectors

Science.gov (United States)

Siegel, S. R.

2015-07-01

MUSIC is a multi-band imaging camera that employs 2304 Microwave Kinetic Inductance Detectors (MKIDs) in 576 spatial pixels to cover a 14 arc-minute field of view, with each pixel simultaneously sensitive to 4 bands centered at 0.87, 1.04, 1.33, and 1.98 mm. In April 2012 the MUSIC instrument was commissioned at the Caltech Submillimeter Observatory with a subset of the full focal plane. We examine the noise present in the detector timestreams during observations taken in the first year of operation. We find that fluctuations in atmospheric emission dominate at long timescales (electronics contribute significant 1/f-type noise at shorter timescales. We describe a method to remove the amplitude, phase, and atmospheric noise using the fact that they are correlated among carrier tones. After removal, the complex signal is decomposed, or projected, into dissipation and frequency components. White noise from the cryogenic HEMT amplifier dominates in the dissipation component. An excess noise is observed in the frequency component that is likely due to fluctuations in two-level system (TLS) defects in the device substrate. We compare the amplitude of the TLS noise with previous measurements.

Generative Adversarial Networks for Noise Reduction in Low-Dose CT.

Science.gov (United States)

Wolterink, Jelmer M; Leiner, Tim; Viergever, Max A; Isgum, Ivana

2017-12-01

Noise is inherent to low-dose CT acquisition. We propose to train a convolutional neural network (CNN) jointly with an adversarial CNN to estimate routine-dose CT images from low-dose CT images and hence reduce noise. A generator CNN was trained to transform low-dose CT images into routine-dose CT images using voxelwise loss minimization. An adversarial discriminator CNN was simultaneously trained to distinguish the output of the generator from routine-dose CT images. The performance of this discriminator was used as an adversarial loss for the generator. Experiments were performed using CT images of an anthropomorphic phantom containing calcium inserts, as well as patient non-contrast-enhanced cardiac CT images. The phantom and patients were scanned at 20% and 100% routine clinical dose. Three training strategies were compared: the first used only voxelwise loss, the second combined voxelwise loss and adversarial loss, and the third used only adversarial loss. The results showed that training with only voxelwise loss resulted in the highest peak signal-to-noise ratio with respect to reference routine-dose images. However, CNNs trained with adversarial loss captured image statistics of routine-dose images better. Noise reduction improved quantification of low-density calcified inserts in phantom CT images and allowed coronary calcium scoring in low-dose patient CT images with high noise levels. Testing took less than 10 s per CT volume. CNN-based low-dose CT noise reduction in the image domain is feasible. Training with an adversarial network improves the CNNs ability to generate images with an appearance similar to that of reference routine-dose CT images.

Developments and application of neutron noise diagnostics of sodium cooled fast reactors

International Nuclear Information System (INIS)

Zylbersztejn, F.

2013-01-01

The Sodium cooled Fast Reactor (SFR) is one of the six reactor types selected by the Generation-IV international forum (GIF), and the building of an industrial prototype is planned in France. The safety standard of the future SFR has to be equivalent to the EPR's. The general improvement of the safety of the new reactor goes through the examination of all the potentially harmful scenarios and both the study and monitoring of early signs. The mechanical deformations of the core can have harmful consequences in sodium fast reactors, such as unexpected power variations due to the reactivity increase in case of core compaction, or the excessive deterioration of the mechanical structures. The monitoring of such phenomena and of their potential early signs is then needed. The monitoring of such phenomena can be done with neutron detectors placed inside and outside the tank. This PhD thesis deals with the study of the neutron noise generated by the periodic deformation of the SFR core, restricted to the so-called core compaction or core flowering phenomenon, a deformation consisting in the variation of the inter-assembly sodium width by a radial bending the assemblies (the assemblies in SFR are held by the base). The PhD thesis has been performed within collaboration between CEA (France) and Chalmers Institute of Technology (Sweden). The work realized during the thesis led to the publication of 3 articles as first author and another as second author. This work has embraced the following topics: A state of the art of the monitoring of the core deformation phenomenon by interpretation of the noise measurements in SFR has been done. The PHENIX reactor multi physics measurements database has been scrutinized to provide an interpretation of the neutron noise bringing out mechanical vibration phenomena. An important conclusion was that the lack of theoretical knowledge about the neutron noise induced by the vibration phenomenon and the ill positioning of the neutron detectors

The normalized interaural correlation : accounting for NoSp thresholds obtained with Gaussian and 'low-noise' masking noise

NARCIS (Netherlands)

Bernstein, L.R.; Par, van de S.L.J.D.E.; Trahiotis, C.T.

1999-01-01

Recently, [J. Acoust. Soc. Am. 103, 2578–2589 (1998)] and [J. Acoust. Soc. Am. 103, 2573–2577 (1998)] independently reported that greater masking of interaurally phase-reversed (Sp) tones was produced by diotic low-noise noise than by diotic Gaussian noise. Based on quantitative analyses, Eddins and

Low-Noise Operation of All-Fiber Femtosecond Cherenkov Laser

DEFF Research Database (Denmark)

Liu, Xiaomin; Villanueva Ibáñez, Guillermo Eduardo; Lægsgaard, Jesper

2013-01-01

We investigate the noise properties of a femtosecond all-fiber Cherenkov radiation source with emission wavelength around 600 nm, based on an Yb-fiber laser and a highly-nonlinear photonic crystal fiber. A relative intensity noise as low as - 103 dBc/Hz, corresponding to 2.48 % pulse-to-pulse...... fluctuation in energy, was observed at the Cherenkov radiation output power of 4.3 mW, or 150 pJ pulse energy. This pulse-to-pulse fluctuation is at least 10.6 dB lower compared to spectrally-sliced supercontinuum sources traditionally used for ultrafast fiberbased generation at visible wavelengths. Low noise...... makes allfiber Cherenkov sources promising for biophotonics applications such as multi-photon microscopy, where minimum pulse-to-pulse energy fluctuation is required. We present the dependency of the noise figure on both the Cherenkov radiation output power and its spectrum....

Low Alloy Steel Structures After Welding with Micro-Jet Cooling

OpenAIRE

Węgrzyn T.; Piwnik J.; Hadryś D.; Wszołek Ł.

2017-01-01

The paper focuses on low alloy steel after innovate welding method with micro-jet cooling. Weld metal deposit (WMD) was carried out for welding and for MIG and MAG welding with micro-jet cooling. This method is very promising mainly due to the high amount of AF (acicular ferrite) and low amount of MAC (self-tempered martensite, retained austenite, carbide) phases in WMD. That structure corresponds with very good mechanical properties, ie. high impact toughness of welds at low temperature. Mic...

A high and low noise model for strong motion accelerometers

Science.gov (United States)

Clinton, J. F.; Cauzzi, C.; Olivieri, M.

2010-12-01

We present reference noise models for high-quality strong motion accelerometer installations. We use continuous accelerometer data acquired by the Swiss Seismological Service (SED) since 2006 and other international high-quality accelerometer network data to derive very broadband (50Hz-100s) high and low noise models. The proposed noise models are compared to the Peterson (1993) low and high noise models designed for broadband seismometers; the datalogger self-noise; background noise levels at existing Swiss strong motion stations; and typical earthquake signals recorded in Switzerland and worldwide. The standard strong motion station operated by the SED consists of a Kinemetrics Episensor (2g clip level; flat acceleration response from 200 Hz to DC; insulated sensor / datalogger systems placed in vault quality sites. At all frequencies, there is at least one order of magnitude between the ALNM and the AHNM; at high frequencies (> 1Hz) this extends to 2 orders of magnitude. This study provides remarkable confirmation of the capability of modern strong motion accelerometers to record low-amplitude ground motions with seismic observation quality. In particular, an accelerometric station operating at the ALNM is capable of recording the full spectrum of near source earthquakes, out to 100 km, down to M2. Of particular interest for the SED, this study provides acceptable noise limits for candidate sites for the on-going Strong Motion Network modernisation.

Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors

International Nuclear Information System (INIS)

Ottaviani, Tony; Karim, Karim S.; Nathan, Arokia; Rowlands, John A.

2006-01-01

Diagnostic digital fluoroscopic applications continuously expose patients to low doses of x-ray radiation, posing a challenge to both the digital imaging pixel and readout electronics when amplifying small signal x-ray inputs. Traditional switch-based amorphous silicon imaging solutions, for instance, have produced poor signal-to-noise ratios (SNRs) at low exposure levels owing to noise sources from the pixel readout circuitry. Current-mediated amorphous silicon pixels are an improvement over conventional pixel amplifiers with an enhanced SNR across the same low-exposure range, but whose output also becomes nonlinear with increasing dosage. A low-noise SNR enhancing readout circuit has been developed that enhances the charge gain of the current-mediated active pixel sensor (C-APS). The solution takes advantage of the current-mediated approach, primarily integrating the signal input at the desired frequency necessary for large-area imaging, while adding minimal noise to the signal readout. Experimental data indicates that the readout circuit can detect pixel outputs over a large bandwidth suitable for real-time digital diagnostic x-ray fluoroscopy. Results from hardware testing indicate that the minimum achievable C-APS output current that can be discerned at the digital fluoroscopic output from the enhanced SNR readout circuit is 0.341 nA. The results serve to highlight the applicability of amorphous silicon current-mediated pixel amplifiers for large-area flat panel x-ray imagers

Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

Science.gov (United States)

Suganthi, K.; Malarvizhi, S.

2018-03-01

A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

International Nuclear Information System (INIS)

Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

2010-01-01

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

Science.gov (United States)

Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

2016-12-01

This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

DEFF Research Database (Denmark)

Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

2006-01-01

In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance simul...

GaN growth on sapphire by MOCVD - Material for HEMT structures

NARCIS (Netherlands)

Grzegorczyk, A.P.

2006-01-01

This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed.

Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

Science.gov (United States)

Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

2018-04-01

We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN ( 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

Monte-Carlo study of electron noise in compensated InSb

International Nuclear Information System (INIS)

Ašmontas, S; Raguotis, R; Bumelienė, S

2015-01-01

The results of Monte Carlo simulations of the electron noise in lightly doped and strongly compensated n-type InSb are presented. The strong electron scattering by ionized impurities is established to change essentially the electron distribution function, spectral density of velocity fluctuations and the dependence of noise temperature on the electric field strength. It is found that the electron noise temperature in strongly compensated InSb with low electron density at liquid nitrogen temperature is close to the lattice temperature in a wide range of electric field strength in which the electron gas cooling effect takes place. The increase of electron density is shown to weaken the electron gas cooling effect due to more intensive electron–electron collisions stimulating delocalization of electrons from the bottom of the conduction band. A satisfactory agreement between calculations and available experimental data is obtained. (paper)

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

OpenAIRE

Kühn, J.

2011-01-01

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Science.gov (United States)

Wang, Cong; Kim, Nam-Young

2012-02-07

Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications

International Nuclear Information System (INIS)

Ahmed, S; Bokhari, S H; Amin, F; Khan, L A; Hussain, Z

2013-01-01

Ion-implanted AlGaN/GaN High Electron Mobility Transistors (HEMT) devices were studied thoroughly to look into the possibilities of enhancing efficiency for high-power and high-frequency electronic and gas sensing applications. A dedicated experimental design was created in order to study the influence of the physical parameters in response to high energy (by virtue of in-situ beam heating due to highly energetic implantation) ion implantation to the active device regions in nitride HEMT structures. Disorder or damage created in the HEMT structure was then studied carefully with electrical characterization techniques such as Hall, I-V and G-V measurements. The evolution of the electrical characteristics affecting the high-power, high-frequency and ultra-high efficiency gas sensing operations were also analyzed by subjecting the HEMT active device regions to progressive time-temperature annealing cycles. Our suggested model can also provide a functional process engineering window to control the extent of 2D Electron mobility in AlGaN/GaN HEMT devices undergoing a full cycle of thermal impact (i.e. from a desirable conductive region to a highly compensated one)

Review of cavity optomechanical cooling

International Nuclear Information System (INIS)

Liu Yong-Chun; Hu Yu-Wen; Xiao Yun-Feng; Wong Chee Wei

2013-01-01

Quantum manipulation of macroscopic mechanical systems is of great interest in both fundamental physics and applications ranging from high-precision metrology to quantum information processing. For these purposes, a crucial step is to cool the mechanical system to its quantum ground state. In this review, we focus on the cavity optomechanical cooling, which exploits the cavity enhanced interaction between optical field and mechanical motion to reduce the thermal noise. Recent remarkable theoretical and experimental efforts in this field have taken a major step forward in preparing the motional quantum ground state of mesoscopic mechanical systems. This review first describes the quantum theory of cavity optomechanical cooling, including quantum noise approach and covariance approach; then, the up-to-date experimental progresses are introduced. Finally, new cooling approaches are discussed along the directions of cooling in the strong coupling regime and cooling beyond the resolved sideband limit. (topical review - quantum information)

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Energy Technology Data Exchange (ETDEWEB)

Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

2005-05-01

Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

Science.gov (United States)

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Ultra-low-vibration pulse-tube cryocooler system - cooling capacity and vibration

Science.gov (United States)

Ikushima, Yuki; Li, Rui; Tomaru, Takayuki; Sato, Nobuaki; Suzuki, Toshikazu; Haruyama, Tomiyoshi; Shintomi, Takakazu; Yamamoto, Akira

2008-09-01

This report describes the development of low-vibration cooling systems with pulse-tube (PT) cryocoolers. Generally, PT cryocoolers have the advantage of lower vibrations in comparison to those of GM cryocoolers. However, cooling systems for the cryogenic laser interferometer observatory (CLIO), which is a gravitational wave detector, require an operational vibration that is sufficiently lower than that of a commercial PT cryocooler. The required specification for the vibration amplitude in cold stages is less than ±1 μm. Therefore, during the development of low-vibration cooling systems for the CLIO, we introduced advanced countermeasures for commercial PT cryocoolers. The cooling performance and the vibration amplitude were evaluated. The results revealed that 4 K and 80 K PT cooling systems with a vibration amplitude of less than ±1 μm and cooling performance of 4.5 K and 70 K at heat loads of 0.5 W and 50 W, respectively, were developed successfully.

I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

Science.gov (United States)

Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

2016-09-01

Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

Low noise SQUIDS

International Nuclear Information System (INIS)

Waal, V.J. de.

1983-01-01

The design, fabrication and limitations of very sensitive SQUID magnetometers are described. The SQUID magnetometer is based on the Josephson effect. A very low-noise niobium SQUID is described. It is fabricated with ultra-small niobium junctions with an overlapping area smaller than 1 μm 2 . The photolithographic technique developed for its fabrication, is described. Also an integrated system with a SQUID and a first-order gradiometer on a single substrate is presented. Calculations of the resolution of a dc SQUID containing ideal Josephson junctions according to the RSJ model are presented including a parasitic capacitance. The usefulness of the fabricated SQUIDS as well as some remarks on their performance is considered. (Auth.)

A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

Science.gov (United States)

Gasmi, Khaled

2018-02-01

An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

Low-noise Collision Operators for Particle-in-cell Simulations

International Nuclear Information System (INIS)

Lewandowski, J.L.V.

2005-01-01

A new method to implement low-noise collision operators in particle-in-cell simulations is presented. The method is based on the fact that relevant collision operators can be included naturally in the Lagrangian formulation that exemplifies the particle-in-cell simulation method. Numerical simulations show that the momentum and energy conservation properties of the simulated plasma associated with the low-noise collision operator are improved as compared with standard collision algorithms based on random numbers

Cross Linked Metal Particles for Low Noise Bolometer Materials

Science.gov (United States)

2016-12-12

Our results indicate that the CLMPs can simultaneously have a high temperature coefficient of resistivity and a low noise, and therefore have a...indicate that the CLMPs can simultaneously have a high temperature co- efficient of resistivity and a low noise, and therefore have a great potential...current as a function of the inverse of applied bias for CLMP films at different temperatures. It is seen that the I-V curves are highly nonlinear as 7 0

Low-Noise Active Decoupling Circuit and its Application to 13C Cryogenic RF Coils at 3T

DEFF Research Database (Denmark)

Sanchez, Juan Diego; Søvsø Szocska Hansen, Esben; Laustsen, Christoffer

2017-01-01

We analyze the loss contributions in a small, 50-mm-diameter receive-only coil for carbon-13 (13C) magnetic resonance imaging at 3 T for 3 different circuits, which, including active decoupling, are compared in terms of their Q-factors and signal-to-noise ratio (SNR). The results show that a circ......We analyze the loss contributions in a small, 50-mm-diameter receive-only coil for carbon-13 (13C) magnetic resonance imaging at 3 T for 3 different circuits, which, including active decoupling, are compared in terms of their Q-factors and signal-to-noise ratio (SNR). The results show...... that a circuit using unsegmented tuning and split matching capacitors can provide 20% SNR enhancement at room temperature compared with that using more traditional designs. The performance of the proposed circuit was also measured when cryogenically cooled to 105 K, and an additional 1.6-fold SNR enhancement...... was achieved on a phantom. The enhanced circuit performance is based on the low capacitance needed to match to 50 when coil losses are low, which significantly reduces the proportion of the current flowing through the matching network and therefore minimizes this loss contribution. This effect makes...

Development of a low-noise, two-dimensional amplifier array

International Nuclear Information System (INIS)

Kishishita, Tetsuichi; Ikeda, Hirokazu; Sakumura, Takuto; Tamura, Ken-ichi; Takahashi, Tadayuki

2009-01-01

This paper describes the recent development of a low-noise, two-dimensional analog front-end ASIC for hybrid pixel imaging detectors. Based on the Open-IP LSI project, the ASIC is designed to meet a low-noise requirement of better than 100e - (rms) with self-triggering capability. The ASIC is intended for the readout of pixel sensors utilizing silicon (Si) and cadmium telluride (CdTe) as detector materials for spectroscopic imaging observations in the X-ray and gamma-ray regions. The readout chip consists of a 4x4 matrix of identical 270μmx270μm pixel cells and was implemented with TSMC 0.35-μm CMOS technology. Each pixel cell contains a charge-sensitive amplifier, pole-zero cancellation circuit, shaper, comparator, and peak hold circuit. Preliminary testing of the ASIC achieved an 88e - (rms) equivalent noise charge and a 25e - /pF noise slope with power consumption of 150μW per pixel.

Multipurpose exciter with low phase noise

Science.gov (United States)

Conroy, B.; Le, D.

1989-01-01

Results of an effort to develop a lower-cost exciter with high stability, low phase noise, and controllable phase and frequency for use in Deep Space Network and Goldstone Solar System Radar applications are discussed. Included is a discussion of the basic concept, test results, plans, and concerns.

LNA A 1.9 GHZ low noise amplifier

Directory of Open Access Journals (Sweden)

Jorge Julián Moreno-Rubio

2006-12-01

Full Text Available This paper shows the design, the simulation, and the layout from a low noise amplifier (LNA, designed with and approximate band from 25 to 80 MHz. The design results of the matching neworks are shown, its noise figure, its available and transduced gain according to its non lineal model (TOM, the DC network, crash inductors and matching capacitors with the large impedance transmission lines.

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Science.gov (United States)

Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

2017-07-25

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

Input Stage for Low-Voltage, Low-Noise Preamplifiers Based on a Floating-Gate MOS Transistor

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe degradat......A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe...... degradation of the performance of the circuit and without the need for a repeating programming. In this way the noise originating from any resistance previously used for the definition of the operating point is avoided completely and, moreover, by avoiding the input high-pass filter both the saturation...

X-band 5-bit MMIC phase shifter with GaN HEMT technology

Science.gov (United States)

Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun

2017-10-01

The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.

Low-frequency noise in planar Hall effect bridge sensors

DEFF Research Database (Denmark)

Persson, Anders; Bejhedb, R.S.; Bejhed, R.S.

2011-01-01

The low-frequency characteristics of planar Hall effect bridge sensors are investigated as function of the sensor bias current and the applied magnetic field. The noise spectra reveal a Johnson-like spectrum at high frequencies, and a 1/f-like excess noise spectrum at lower frequencies, with a kn...

SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

Science.gov (United States)

Chia-Song, Wu; Hsing-Chung, Liu

2009-11-01

This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Science.gov (United States)

Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

2017-04-01

In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

Low noise Nb-SIS mixers at far above the gap frequency

NARCIS (Netherlands)

Gao, [No Value; vandeStadt, H; Jegers, JBM; Kovtonyuk, S; Hulshoff, W; Whyborn, ND; Klapwijk, TM; deGraauw, T; Liao, FJ; Liu, JY

1996-01-01

There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise

An investigation of twenty-one cases of low-frequency noise complaints

DEFF Research Database (Denmark)

Pedersen, Christian Sejer; Møller, Henrik; Persson-Waye, Kerstin

2007-01-01

Twenty-one cases of low-frequency noise complaints were thoroughly investigated with the aim of answering the question whether it is real physical sound or low-frequency tinnitus that causes the annoyance. Noise recordings were made in the homes of the complainants taking the spatial variation...

Simple programmable voltage reference for low frequency noise measurements

Science.gov (United States)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Directory of Open Access Journals (Sweden)

Bradley D. Christiansen

2012-01-01

Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

A powerful way of cooling computer chip using liquid metal with low melting point as the cooling fluid

Energy Technology Data Exchange (ETDEWEB)

Li Teng; Lv Yong-Gang [Chinese Academy of Sciences, Beijing (China). Cryogenic Lab.; Chinese Academy of Sciences, Beijing (China). Graduate School; Liu Jing; Zhou Yi-Xin [Chinese Academy of Sciences, Beijing (China). Cryogenic Lab.

2006-12-15

With the improvement of computational speed, thermal management becomes a serious concern in computer system. CPU chips are squeezing into tighter and tighter spaces with no more room for heat to escape. Total power-dissipation levels now reside about 110 W, and peak power densities are reaching 400-500 W/mm{sup 2} and are still steadily climbing. As a result, higher performance and greater reliability are extremely tough to attain. But since the standard conduction and forced-air convection techniques no longer be able to provide adequate cooling for sophisticated electronic systems, new solutions are being looked into liquid cooling, thermoelectric cooling, heat pipes, and vapor chambers. In this paper, we investigated a novel method to significantly lower the chip temperature using liquid metal with low melting point as the cooling fluid. The liquid gallium was particularly adopted to test the feasibility of this cooling approach, due to its low melting point at 29.7 C, high thermal conductivity and heat capacity. A series of experiments with different flow rates and heat dissipation rates were performed. The cooling capacity and reliability of the liquid metal were compared with that of the water-cooling and very attractive results were obtained. Finally, a general criterion was introduced to evaluate the cooling performance difference between the liquid metal cooling and the water-cooling. The results indicate that the temperature of the computer chip can be significantly reduced with the increasing flow rate of liquid gallium, which suggests that an even higher power dissipation density can be achieved with a large flow of liquid gallium and large area of heat dissipation. The concept discussed in this paper is expected to provide a powerful cooling strategy for the notebook PC, desktop PC and large computer. It can also be extended to more wide area involved with thermal management on high heat generation rate. (orig.)

Ferrite morphology and residual phases in continuously cooled low carbon steels

International Nuclear Information System (INIS)

Dunne, D.P.

1999-01-01

Although much research has been conducted on the isothermal transformation products of medium to high carbon hardenable steels, relatively little has been reported for transformation of low carbon structural steels under continuous cooling conditions. The trend towards reduced carbon levels (less than about 0.1 wt% C) has been driven by demands for formability and weldability, challenging steel designers to maintain strength by microalloying and/or thermomechanical controlled processing. Although control of the ferritic products formed in low carbon steels after hot rolling, normalising and welding is essential in order to ensure adequate strength and toughness, understanding of the microstructures formed on continuous cooling is still limited. In addition, transformation mechanisms remain controversial because of polarisation of researchers into groups championing diffusional and displacive theories for the transformation of austenite over a wide range of cooling rates. The present review compares and draws together the main ferrite classification schemes, and discusses some critical issues on kinetics and mechanisms, in an attempt to rationalise the effects of cooling rate, prior austenite structure and composition on the resulting ferrite structure and its mechanical properties. It is concluded that with increasing cooling rate the ferritic product becomes finer, more plate-like, more dislocated, more carbon supersaturated, more likely to be formed by a displacive mechanism, harder and stronger. Other conclusions are that: (i) 'bainitic ferrite', which is a pervasive form of ferrite in continuously cooled low carbon steels, is different from the conventional upper and lower bainites observed in higher carbon steels, insofar as the co-product 'phase' is typically martensite-austenite islands rather than cementite; and (ii) low carbon bainite rather than martensite is the dominant product at typical fast cooling rates (<500K/s) associated with commercial

A Baseband Ultra-Low Noise SiGe:C BiCMOS 0.25 µm Amplifier And Its Application For An On-Chip Phase-Noise Measurement Circuit

OpenAIRE

Godet , Sylvain; Tournier , Éric; Llopis , Olivier; Cathelin , Andreia; Juyon , Julien

2009-01-01

4 pages; International audience; The design and realization of an ultra-low noise operational amplifier is presented. Its applications are integrated low-frequency noise measurements in electronic devices and on-chip phase-noise measurement circuit. This paper discusses the SiGe:C BiCMOS 0.25 µm design improvements used for low noise applications. The proposed three-stage operational amplifier uses parallel bipolar transistor connection as input differential pair for low noise behavior. This ...

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

International Nuclear Information System (INIS)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

2012-01-01

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

2012-01-15

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low-Frequency Noise Reduction by Earmuffs with Flax Fibre-Reinforced Polypropylene Ear Cups

Directory of Open Access Journals (Sweden)

Linus Yinn Leng Ang

2018-01-01

Full Text Available Soldiers and supporting engineers are frequently exposed to high low-frequency (<500 Hz cabin noise in military vehicles. Despite the use of commercial hearing protection devices, the risk of auditory damage is still imminent because the devices may not be optimally customised for such applications. This study considers flax fibre-reinforced polypropylene (Flax-PP as an alternative to the material selection for the ear cups of commercial earmuffs, which are typically made of acrylonitrile butadiene styrene (ABS. Different weaving configurations (woven and nonwoven and various noise environments (pink noise, cabin booming noise, and firing noise were considered to investigate the feasibility of the proposed composite earmuffs for low-frequency noise reduction. The remaining assembly components of the earmuff were kept consistent with those of a commercial earmuff, which served as a benchmark for results comparison. In contrast to the commercial earmuff, the composite earmuffs were shown to be better in mitigating low-frequency noise by up to 16.6 dB, while compromising midfrequency acoustical performance. Consequently, the proposed composite earmuffs may be an alternative for low-frequency noise reduction in vehicle cabins, at airports, and at construction sites involving heavy machineries.

Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

International Nuclear Information System (INIS)

Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

2012-01-01

In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications. (interdisciplinary physics and related areas of science and technology)

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Science.gov (United States)

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Noise performance of the multiwavelength sub/millimeter inductance camera (MUSIC) detectors

International Nuclear Information System (INIS)

Siegel, S. R.

2015-01-01

MUSIC is a multi-band imaging camera that employs 2304 Microwave Kinetic Inductance Detectors (MKIDs) in 576 spatial pixels to cover a 14 arc-minute field of view, with each pixel simultaneously sensitive to 4 bands centered at 0.87, 1.04, 1.33, and 1.98 mm. In April 2012 the MUSIC instrument was commissioned at the Caltech Submillimeter Observatory with a subset of the full focal plane. We examine the noise present in the detector timestreams during observations taken in the first year of operation. We find that fluctuations in atmospheric emission dominate at long timescales (< 0.5 Hz), and fluctuations in the amplitude and phase of the probe signal due to readout electronics contribute significant 1/f-type noise at shorter timescales. We describe a method to remove the amplitude, phase, and atmospheric noise using the fact that they are correlated among carrier tones. After removal, the complex signal is decomposed, or projected, into dissipation and frequency components. White noise from the cryogenic HEMT amplifier dominates in the dissipation component. An excess noise is observed in the frequency component that is likely due to fluctuations in two-level system (TLS) defects in the device substrate. We compare the amplitude of the TLS noise with previous measurements

CT colonography at low tube potential: using iterative reconstruction to decrease noise

International Nuclear Information System (INIS)

Chang, K.J.; Heisler, M.A.; Mahesh, M.; Baird, G.L.; Mayo-Smith, W.W.

2015-01-01

Aim: To determine the level of iterative reconstruction required to reduce increased image noise associated with low tube potential computed tomography (CT). Materials and methods: Fifty patients underwent CT colonography with a supine scan at 120 kVp and a prone scan at 100 kVp with other scan parameters unchanged. Both scans were reconstructed with filtered back projection (FBP) and increasing levels of adaptive statistical iterative reconstruction (ASiR) at 30%, 60%, and 90%. Mean noise, soft tissue and tagged fluid attenuation, contrast, and contrast-to-noise ratio (CNR) were collected from reconstructions at both 120 and 100 kVp and compared using a generalised linear mixed model. Results: Decreasing tube potential from 120 to 100 kVp significantly increased image noise by 30–34% and tagged fluid attenuation by 120 HU at all ASiR levels (p<0.0001, all measures). Increasing ASiR from 0% (FBP) to 30%, 60%, and 90% resulted in significant decreases in noise and increases in CNR at both tube potentials (p<0.001, all comparisons). Compared to 120 kVp FBP, ASiR greater than 30% at 100 kVp yielded similar or lower image noise. Conclusions: Iterative reconstruction adequately compensates for increased image noise associated with low tube potential imaging while improving CNR. An ASiR level of approximately 50% at 100 kVp yields similar noise to 120 kVp without ASiR. -- Highlights: •Peak kilovoltage (kVp) can be reduced to decrease radiation dose and increase contrast attenuation at a cost of increased image noise. •Utilizing iterative reconstruction can decrease image noise and increase contrast to noise ratio (CNR) independent of kVp. •Iterative reconstruction adequately compensates for increased image noise associated with low dose low kVp imaging while improving CNR. •An ASiR level of approximately 50% at 100 kVp yields similar noise to 120 kVp without ASiR

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

International Nuclear Information System (INIS)

Lenka, T. R.; Panda, A. K.

2011-01-01

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

DEFF Research Database (Denmark)

Larsson, David

2007-01-01

This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

Designing charge-sensitive preamplifiers based on low-noise analog integrated circuits

International Nuclear Information System (INIS)

Agakhanyan, T.M.

1998-01-01

The methodology for designing charge-sensitive preamplifiers on the low-noise analog integral circuits, including all the stages: the mathematical synthesis with optimization of the intermediate function; the scheme-technical synthesis with parametric optimization of the scheme and analysis of draft projects with the parameter verification is presented. The designing is conducted on the basis of requirements for signal parameters and noise indices of the preamplifier. The system of automated designing of the charge-sensitive preamplifiers on the low-noise analog integral circuits is developed [ru

LOW-NOISE PAVEMENT AS A WAY OF LIMITATION OF TRAFFIC NOISE LEVEL

Directory of Open Access Journals (Sweden)

Władysław Gardziejczyk

2014-11-01

Full Text Available Road surface can significantlyreduce the trafficnoise level. Depending on the characteristic of the upper surface layers the differences between the maximum rolling noise levels from passing vehicles to reach values about 10 dB (A. A special group is low-noise pavements characterized by the presence of voids above 15%. Application the porous asphalt layers or asphalt mixture type BBTM affects a significantreduction the width of land surrounded the roads where permissible equivalent sound level is exceeded. Such solutions in some cases can replace acoustic barriers. Road pavements with a higher content of voids require proper maintenance because their acoustic performances are reduced during operation.

A low noise 665 GHz SIS quasi-particle waveguide receiver

Science.gov (United States)

Kooi, J. W.; Walker, C. K.; Leduc, H. G.; Hunter, T. R.; Benford, D. J.; Phillips, T. G.

1993-01-01

Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.

A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

Science.gov (United States)

Nguyen, Tung The-Lam; Kim, Sam-Dong

2017-11-01

We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I-V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.

A Low Noise Amplifier for Neural Spike Recording Interfaces

Directory of Open Access Journals (Sweden)

Jesus Ruiz-Amaya

2015-09-01

Full Text Available This paper presents a Low Noise Amplifier (LNA for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz–7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models.

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

International Nuclear Information System (INIS)

Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

2015-01-01

A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

Observation of Synchrotron Radiation Using Low Noise Block (LNB) at ANKA

CERN Document Server

Judin, V; Hofmann, A; Huttel, E; Kehrer, B; Klein, M; Marsching, S; Muller, A-S; Smale, N; Caspers, F

2011-01-01

Generally Coherent Synchrotron Radiation (CSR) is emitted for wavelengths longer than or equal the bunch length, so for CSR in the THz-range short bunches are required. There are two types of detectors in this range of the spectrum: slow detectors like a golay cell or pyrometric detectors (used for e.g. imaging, spectroscopy) and fast detectors like superconducting bolometer detector systems and Schottky Barrier diodes (used for e.g. the investigation of dynamic processes in accelerator physics). The hot electron bolometer (HEB) detector system is a member of second group. It is very fast and has broad spectral characteristics, but unfortunately very expensive and have to be cooled using liquid helium. If the broad spectral response is not important, it will be suitably to use a Schottky Barrier diode instead. These detectors are massively cheaper but also slower. As an alternative to a Schottky diode a LNB (Low Noise Block) can be also used. It is usually used in standard TV-SAT-receivers. Due to mass produc...

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

Science.gov (United States)

Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

2016-01-01

We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. PMID:26907298

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

Directory of Open Access Journals (Sweden)

Yacine Halfaya

2016-02-01

Full Text Available We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO 2 and 15 ppm-NH 3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

Suppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements

Science.gov (United States)

Volcheck, V. S.; Stempitsky, V. R.

2017-11-01

Self-heating has an adverse effect on characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs). Various solutions to the problem have been proposed, however, a temperature rise due to dissipated electrical power still hinders the production of high power and high speed GaN devices. In this paper, thermal management of GaN HEMT via few-layer graphene (FLG) heat spreading elements is investigated. It is shown that integration of the FLG elements on top of the device structure considerably reduces the maximum temperature and improves the DC and small signal AC performance.

Low Delay Noise Reduction and Dereverberation for Hearing Aids

Directory of Open Access Journals (Sweden)

Heinrich W. Löllmann

2009-01-01

Full Text Available A new system for single-channel speech enhancement is proposed which achieves a joint suppression of late reverberant speech and background noise with a low signal delay and low computational complexity. It is based on a generalized spectral subtraction rule which depends on the variances of the late reverberant speech and background noise. The calculation of the spectral variances of the late reverberant speech requires an estimate of the reverberation time (RT which is accomplished by a maximum likelihood (ML approach. The enhancement with this blind RT estimation achieves almost the same speech quality as by using the actual RT. In comparison to commonly used post-filters in hearing aids which only perform a noise reduction, a significantly better objective and subjective speech quality is achieved. The proposed system performs time-domain filtering with coefficients adapted in the non-uniform (Bark-scaled frequency-domain. This allows to achieve a high speech quality with low signal delay which is important for speech enhancement in hearing aids or related applications such as hands-free communication systems.

Annoyance of Low Frequency Noise (LFN) in the laboratory assessed by LFN-sufferers and non-sufferers

DEFF Research Database (Denmark)

Poulsen, Torben

2003-01-01

In a series of listening tests, test subjects listened to eight different environmental low frequency noises to evaluate their loudness and annoyance. The noises were continuous noise with and without tones, intermittent noise, music, traffic noise and low frequency noises with an impulsive...

GaAs Wideband Low Noise Amplifier Design for Breast Cancer Detection System

DEFF Research Database (Denmark)

Yan, Lei; Krozer, Viktor; Delcourt, Sebastien

2009-01-01

Modern wideband systems require low-noise receivers with bandwidth approaching 10 GHz. This paper presents ultra-wideband stable low-noise amplifier MMIC with cascode and source follower buffer configuration using GaAs technology. Source degeneration, gate and shunt peaking inductors are used...

Design of low noise class D amplifiers using an integrated filter

International Nuclear Information System (INIS)

Wang Haishi; Zhang Bo

2012-01-01

This paper investigates the noise sources in a single-ended class D amplifier (SECDA) and suggests corresponding ways to lower the noise. The total output noise could be expressed as a function of the gain and noises from different sources. According to the function, the bias voltage (V B ) is a primary noise source, especially for a SECDA with a large gain. A low noise SECDA is obtained by integrating a filter into the SECDA to lower the noise of the V B . The filter utilizes an active resister and an 80 pF capacitance to get a 3 Hz pole. A noise test and fast Fourier transform analysis show that the noise performance of this SECDA is the same as that of a SECDA with an external filter. (semiconductor integrated circuits)

A dilution refrigerator combining low base temperature, high cooling power and low heat leak for use with nuclear cooling

International Nuclear Information System (INIS)

Bradley, D.I.; Guenault, A.M.; Keith, V.; Miller, I.E.; Pickett, G.R.; Bradshaw, T.W.; Locke-Scobie, B.G.

1982-01-01

The design philosophy, design, construction and performance of a dilution refrigerator specifically intended for nuclear cooling experiments in the submillikelvin regime is described. Attention has been paid from the outset to minimizing sources of heat leaks, and to achieving a low base temperature and relatively high cooling power below 10 mK. The refrigerator uses sintered silver heat exchangers similar to those developed at Grenoble. The machine has a base temperature of 3 mK or lower and can precool a copper nuclear specimen in 6.8 T to 8 mK in 70 h. The heat leak to the innermost nuclear stage is < 30 pW after only a few days' running. (author)

Audible Noise Measurement and Analysis of the Main Power Apparatus in UHV GIS Substations

Directory of Open Access Journals (Sweden)

Zhou Nian Guang

2016-01-01

Full Text Available Investigation of audible noise characteristics of the main power apparatus in UHV GIS substations provides essential statistics for the noise prediction and control. Noise pressure level, spectrum and attenuation characteristics of the main transformers and high voltage (HV reactors are measured and analyzed in this paper. The result shows that the main transformer and HV reactor have identical A-weighted equivalent sound pressure level. The medium- and low-frequency noises are the primary components in the spectral. More attention should be paid to the low-frequency bands in the noise control process. The noise of cooling fan has a large influence on that of the main transformer. Without the consideration of corona noise, the average A-weighted sound pressure level shows an overall decreasing trend with the increase of the propagation distance. Obvious interference phenomenon of the noises at 100 and 200Hz exists in the noise propagation process.

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

International Nuclear Information System (INIS)

Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

2014-01-01

In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Jin, Jidong [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Du, Lulu; Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); School of Physics, Shandong University, Jinan 250100 (China)

2015-08-31

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN HEMT channel

Science.gov (United States)

Mikhailovich, S. V.; Galiev, R. R.; Zuev, A. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Khabibullin, R. A.

2017-08-01

Field-effect high-electron-mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures with various gate lengths L g have been studied. The maximum values of current and power gaincutoff frequencies ( f T and f max, respectively) amounted to 88 and 155 GHz for HEMTs with L g = 125 nm, while those for the transistors with L g = 360 nm were 26 and 82 GHz, respectively. Based on the measured S-parameters, the values of elements in small-signal equivalent schemes of AlGaN/AlN/GaN HEMTs were extracted and the dependence of electron-injection velocity vinj on the gate-drain voltage was determined. The influence of L g and the drain-source voltage on vinj has been studied.

Ultra-low noise miniaturized neural amplifier with hardware averaging.

Science.gov (United States)

Dweiri, Yazan M; Eggers, Thomas; McCallum, Grant; Durand, Dominique M

2015-08-01

Peripheral nerves carry neural signals that could be used to control hybrid bionic systems. Cuff electrodes provide a robust and stable interface but the recorded signal amplitude is small (concept of hardware averaging to nerve recordings obtained with cuff electrodes. An optimization procedure is developed to minimize noise and power simultaneously. The novel design was based on existing neural amplifiers (Intan Technologies, LLC) and is validated with signals obtained from the FINE in chronic dog experiments. We showed that hardware averaging leads to a reduction in the total recording noise by a factor of 1/√N or less depending on the source resistance. Chronic recording of physiological activity with FINE using the presented design showed significant improvement on the recorded baseline noise with at least two parallel operation transconductance amplifiers leading to a 46.1% reduction at N = 8. The functionality of these recordings was quantified by the SNR improvement and shown to be significant for N = 3 or more. The present design was shown to be capable of generating hardware averaging on noise improvement for neural recording with cuff electrodes, and can accommodate the presence of high source impedances that are associated with the miniaturized contacts and the high channel count in electrode arrays. This technique can be adopted for other applications where miniaturized and implantable multichannel acquisition systems with ultra-low noise and low power are required.

A Peltier cooling diamond anvil cell for low-temperature Raman spectroscopic measurements

Science.gov (United States)

Noguchi, Naoki; Okuchi, Takuo

2016-12-01

A new cooling system using Peltier modules is presented for a low-temperature diamond anvil cell instrument. This cooling system has many advantages: it is vibration-free, low-cost, and compact. It consists of double-stacked Peltier modules and heat sinks, where a cooled ethylene glycol-water mixture flows through a chiller. Current is applied to the Peltier modules by two programmable DC power supplies. Sample temperature can be controlled within the range 210-300 K with a precision of ±0.1 K via a Proportional-Integral-Differential (PID) control loop. A Raman spectroscopic study for the H2O ice VII-VIII transition is shown as an example of an application of the Peltier cooling diamond anvil cell system.

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Liu, Liang; Xiang, Li; Guo, Huiqiang; Wei, Jian, E-mail: weijian6791@pku.edu.cn [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China and Collaborative Innovation Center of Quantum Matter, Beijing (China); Li, D. L.; Yuan, Z. H.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn; Han, X. F. [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2014-12-15

We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO{sub x}/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO{sub x}-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

Directory of Open Access Journals (Sweden)

Liang Liu

2014-12-01

Full Text Available We report on the low frequency (LF noise measurements in magnetic tunnel junctions (MTJs below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlOx/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlOx-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

Updated design for a low-noise, wideband transimpedance photodiode amplifier

International Nuclear Information System (INIS)

Paul, S. F.; Marsala, R.

2006-01-01

The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

Detectors for low energy electron cooling in RHIC

Energy Technology Data Exchange (ETDEWEB)

Carlier, F. S. [Brookhaven National Lab. (BNL), Upton, NY (United States)

2016-02-15

Low-energy operation of RHIC is of particular interest to study the location of a possible critical point in the QCD phase diagram. The performance of RHIC at energies equal to or lower than 10 GV/nucleon is limited by nonlinearities, Intra-BeamScattering (IBS) processes and space-charge effects. To successfully address the luminosity and ion store lifetime limitations imposed by IBS, the method of electron cooling has been envisaged. During electron cooling processes electrons are injected along with the ion beam at the nominal ion bunch velocities. The velocity spread of the ion beam is reduced in all planes through Coulomb interactions between the cold electron beam and the ion beam. The electron cooling system proposed for RHIC will be the first of its kind to use bunched beams for the delivery of the electron bunches, and will therefore be accompanied by the necessary challenges. The designed electron cooler will be located in IP2. The electron bunches will be accelerated by a linac before being injected along side the ion beams. Thirty consecutive electron bunches will be injected to overlap with a single ion bunch. They will first cool the yellow beam before being extracted, turned by 180-degrees, and reinjected into the blue beam for cooling. As such, both the yellow and blue beams will be cooled by the same ion bunches. This will pose considerable challenges to ensure proper electron beam quality to cool the second ion beam. Furthermore, no ondulator will be used in the electron cooler so radiative recombination between the ions and the electrons will occur.

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Science.gov (United States)

Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, Sudhiranjan; Kumar, Mahesh

2017-08-01

In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ˜1270cm2/Vs, ˜2×1013 cm-2 and ˜0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111 substrate

Directory of Open Access Journals (Sweden)

Adarsh Nigam

2017-08-01

Full Text Available In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs characteristics fabricated on Si(111 substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

International Nuclear Information System (INIS)

Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Yu-Sheng; Lee, Ching-Sung; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

2015-01-01

This work investigates Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al 2 O 3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (I DSS : 337.6 mA mm −1  → 462.9 mA mm −1 ), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BV GD : −103.8 V → −183.5 V), unity-gain cut-off frequency (f T : 11.3 GHz → 17.7 GHz), maximum oscillation frequency (f max : 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring f T and f max of the studied MOS-HEMT (Schottky-gate HEMT) are V GS  = −2.5 (−2) V and V DS  = 7 V. The corresponding V GS and V DS biases are −2.5 (−2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C–V) hysteresis is obtained in the Al 2 O 3 -MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300–480 K are also studied. (paper)

Enhanced ground bounce noise reduction in a low-leakage CMOS multiplier

Science.gov (United States)

Verma, Bipin Kumar; Akashe, Shyam; Sharma, Sanjay

2015-09-01

In this paper, various parameters are used to reduce leakage power, leakage current and noise margin of circuits to enhance their performance. A multiplier is proposed with low-leakage current and low ground bounce noise for the microprocessor, digital signal processors (DSP) and graphics engines. The ground bounce noise problem appears when a conventional power-gating circuit transits from sleep-to-active mode. This paper discusses a reduction in leakage current in the stacking power-gating technique by three modes - sleep, active and sleep-to-active. The simulation results are performed on a 4 × 4 carry-save multiplier for leakage current, active power, leakage power and ground bounce noise, and comparison made for different nanoscales. Ground bounce noise is limited to 90%. The leakage current of the circuit is decimated up to 80% and the active power is reduced to 31%. We performed simulations using cadence virtuoso 180 and 45 nm at room temperature at various supply voltages.

Extended behavioural modelling of FET and lattice-mismatched HEMT devices

Science.gov (United States)

Khawam, Yahya; Albasha, Lutfi

2017-07-01

This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

An analytical turn-on power loss model for 650-V GaN eHEMTs

DEFF Research Database (Denmark)

Shen, Yanfeng; Wang, Huai; Shen, Zhan

2018-01-01

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d......-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

A 1–2 GHz high linearity transformer-feedback power-to-current LNA

NARCIS (Netherlands)

Li, X.; Serdijn, W.A.; Woestenburg, B.E.M.; Bij de Vaate, J.G.

2009-01-01

This paper demonstrates that a double-loop transformer-feedback power-to-current low noise amplifier, to be implemented in a 0.2 lm GaAs p-HEMT IC process, is able to obtain a noise figure less than 0.8 dB, an input return loss less than -12 dB, a flat voltage-to-current signal transfer of 180 mS,

The assessment and evaluation of low-frequency noise near the region of infrasound

Directory of Open Access Journals (Sweden)

Stanislav Ziaran

2014-01-01

Full Text Available The main aim of this paper is to present recent knowledge about the assessment and evaluation of low-frequency sounds (noise and infrasound, close to the threshold of hearing, and identify their potential effect on human health and annoyance. Low-frequency noise generated by air flowing over a moving car with an open window was chosen as a typical scenario which can be subjectively assessed by people traveling by automobile. The principle of noise generated within the interior of the car and its effects on the comfort of the driver and passengers are analyzed at different velocities. An open window of a car at high velocity behaves as a source of specifically strong tonal low-frequency noise which is generally perceived as annoying. The interior noise generated by an open window of a passenger car was measured under different conditions: Driving on a highway and driving on a typical roadway. First, an octave-band analysis was used to assess the noise level and its impact on the driver′s comfort. Second, a fast Fourier transform (FFT analysis and one-third octave-band analysis were used for the detection of tonal low-frequency noise. Comparison between two different car makers was also done. Finally, the paper suggests some possibilities for scientifically assessing and evaluating low-frequency sounds in general, and some recommendations are introduced for scientific discussion, since sounds with strong low-frequency content (but not only strong engender greater annoyance than is predicted by an A-weighted sound pressure level.

Design and evaluation of modelocked semiconductor lasers for low noise and high stability

DEFF Research Database (Denmark)

Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

2005-01-01

We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

International Nuclear Information System (INIS)

Zhao, M.; Liu, X.Y.; Zheng, Y.K.; Li, Yankui; Ouyang, Sihua

2013-01-01

Highlights: ► We report the behavior of the current–voltage characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. ► The origin of the leakage current and the current transport behaviors are reported. ► There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height in homogeneities. -- Abstract: In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (R s ) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, R s , G m and Schottky leakage current values are seen to be strongly temperature dependent

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

Directory of Open Access Journals (Sweden)

Po-Chien Chou

2017-02-01

Full Text Available This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS high electron mobility transistors (HEMTs. When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: VDS = 0 V, off, and off (cascode-connection states. Changes of direct current (DC figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments.

Passive low energy cooling of buildings

CERN Document Server

Givoni, Baruch

1994-01-01

A practical sourcebook for building designers, providing comprehensive discussion of the impact of basic architectural choices on cooling efficiency, including the layout and orientation of the structure, window size and shading, exterior color, and even the use of plantings around the site. All major varieties of passive cooling systems are presented, with extensive analysis of performance in different types of buildings and in different climates: ventilation; radiant cooling; evaporative cooling; soil cooling; and cooling of outdoor spaces.

The Low-Noise Potential of Distributed Propulsion on a Catamaran Aircraft

Science.gov (United States)

Posey, Joe W.; Tinetti, A. F.; Dunn, M. H.

2006-01-01

The noise shielding potential of an inboard-wing catamaran aircraft when coupled with distributed propulsion is examined. Here, only low-frequency jet noise from mid-wing-mounted engines is considered. Because low frequencies are the most difficult to shield, these calculations put a lower bound on the potential shielding benefit. In this proof-of-concept study, simple physical models are used to describe the 3-D scattering of jet noise by conceptualized catamaran aircraft. The Fast Scattering Code is used to predict noise levels on and about the aircraft. Shielding results are presented for several catamaran type geometries and simple noise source configurations representative of distributed propulsion radiation. Computational analyses are presented that demonstrate the shielding benefits of distributed propulsion and of increasing the width of the inboard wing. Also, sample calculations using the FSC are presented that demonstrate additional noise reduction on the aircraft fuselage by the use of acoustic liners on the inboard wing trailing edge. A full conceptual aircraft design would have to be analyzed over a complete mission to more accurately quantify community noise levels and aircraft performance, but the present shielding calculations show that a large acoustic benefit could be achieved by combining distributed propulsion and liner technology with a twin-fuselage planform.

Characterization of a low frequency magnetic noise from a two stage pulse tube cryocooler

International Nuclear Information System (INIS)

Eshraghi, Mohamad Javad; Sasada, Ichiro; Kim, Jin Mok; Lee, Yong Ho

2008-01-01

Magnetic noise of a two stage pulse tube cryocooler(PT) has been measured by a fundamental mode orthogonal fluxgate magnetometer and by a LTS SQUID gradiometer. The magnetometer was installed in a Dewar made of aluminum at 12 cm apart from a section containing magnetic regenerative materials of the PT. The magnetic noise shows a clear peak at 1.8 Hz which is the fundamental frequency of the He gas pumping rate. The 1.8 Hz magnetic noise took a peak, during the cooling process, when the cold stage temperature was at (or close to) 12 K, which resembles the variation of the temperature of the second cold stage of 1.8 Hz. Hence we attributed the main source of this magnetic noise to the temperature dependency of magnetic susceptibility of magnetic regenerative materials such as Er3Ni and HoCu2 used at the second stage. We pointed out that the superconducting magnetic shield by lead sheets reduced the interfering magnetic noise generated from this part. With this scheme, the magnetic noise amplitude measured with the first order gradiometer DROS, mounted in the vicinity of the magnetic regenerator, when the noise amplitude is minimum, which could be found from the fluxgate measurement results, was less than 500 pT peak to peak. Whereas without lead shielding the noise level was higher than the dynamic range of SQUID instrumentations which is around ±10nT. (author)

Low frequency noise reduction using stiff light composite panels

Institute of Scientific and Technical Information of China (English)

DENG Yongchang; LIN Weizheng

2003-01-01

The experiment presented in this paper is to investigate and analyze the noise reduction at low frequency using stiff light composite panels. Since these composite panels are made of lightweight and stiff materials, this actuation strategy will enable the creation of composite panels for duct noise control without using traditional heavy structural mass. The results suggest that the mass-spring resonance absorption in the case of a comparatively stiff thick panel with a thin flexible plate is more efficient with minimum weight, when subjected to low-frequency (<500 Hz). The efficiency of the panel absorber depends on the mass of the thin flexible plate and the stiffness of the panel.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

Science.gov (United States)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Energy Technology Data Exchange (ETDEWEB)

Tikhomirov, V. G., E-mail: VV11111@yandex.ru [Saint Petersburg Electrotechnical University “LETI” (Russian Federation); Zemlyakov, V. E.; Volkov, V. V.; Parnes, Ya. M.; Vyuginov, V. N. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Cherkashin, N. A. [CEMES-CNRS-Université de Toulouse (France); Mizerov, M. N. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-02-15

The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

Measuring proton beam thermal noises on the NAP-M storage ring

International Nuclear Information System (INIS)

Dement'ev, E.N.; Dikanskij, N.S.; Medvedko, A.S.; Parkhomchuk, V.V.; Pestrikov, D.V.

1980-01-01

The data on experimental investigation of thermal noises of an asimuthally homogeneous proton beam on the NAP-M storage ring are given. The noise spectra are measured at the 5th and 8th harmonics of the ciculation frequency using pick-up electrodes. The dependencies of the noise power on the proton current for noncooled and cooled beams are presented. It is shown that as a result of electron cooling the noise power decreases by two orders and in the 0.5-10 μA current range the noise power of the cooled beam does not depend on the proton current. The noise power of the noncooled beam linearly increases with the proton current. It is also shown that with the modulation growth the noise power increases. The conclusions are made that while analyzing noises of the continuous beam in the storage ring the changes of the noise spectra due to particle interaction in the beam should be taken into account

Low-power low-noise mixed-mode VLSI ASIC for infinite dynamic range imaging applications

Science.gov (United States)

Turchetta, Renato; Hu, Y.; Zinzius, Y.; Colledani, C.; Loge, A.

1998-11-01

Solid state solutions for imaging are mainly represented by CCDs and, more recently, by CMOS imagers. Both devices are based on the integration of the total charge generated by the impinging radiation, with no processing of the single photon information. The dynamic range of these devices is intrinsically limited by the finite value of noise. Here we present the design of an architecture which allows efficient, in-pixel, noise reduction to a practically zero level, thus allowing infinite dynamic range imaging. A detailed calculation of the dynamic range is worked out, showing that noise is efficiently suppressed. This architecture is based on the concept of single-photon counting. In each pixel, we integrate both the front-end, low-noise, low-power analog part and the digital part. The former consists of a charge preamplifier, an active filter for optimal noise bandwidth reduction, a buffer and a threshold comparator, and the latter is simply a counter, which can be programmed to act as a normal shift register for the readout of the counters' contents. Two different ASIC's based on this concept have been designed for different applications. The first one has been optimized for silicon edge-on microstrips detectors, used in a digital mammography R and D project. It is a 32-channel circuit, with a 16-bit binary static counter.It has been optimized for a relatively large detector capacitance of 5 pF. Noise has been measured to be equal to 100 + 7*Cd (pF) electron rms with the digital part, showing no degradation of the noise performances with respect to the design values. The power consumption is 3.8mW/channel for a peaking time of about 1 microsecond(s) . The second circuit is a prototype for pixel imaging. The total active area is about (250 micrometers )**2. The main differences of the electronic architecture with respect to the first prototype are: i) different optimization of the analog front-end part for low-capacitance detectors, ii) in- pixel 4-bit comparator

Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

Directory of Open Access Journals (Sweden)

Ciura Łukasz

2014-08-01

Full Text Available The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

Enhanced Schottky signals from electron-cooled, coasting beams in a heavy-ion storage ring

Energy Technology Data Exchange (ETDEWEB)

Krantz, C., E-mail: claude.krantz@mpi-hd.mpg.d [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Blaum, K.; Grieser, M. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Litvinov, Yu.A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstrasse 1, D-64291 Darmstadt (Germany); Repnow, R.; Wolf, A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany)

2011-02-11

Measurements at the Test Storage Ring of the Max-Planck-Institut fuer Kernphysik in Heidelberg (Germany) have shown that the signal amplitude induced in a Schottky-noise pickup electrode by a coasting electron-cooled ion beam can be greatly enhanced by exposure of the latter to a perturbing radiofrequency signal which is detuned from the true beam revolution frequency. The centre frequencies obtained from harmonic analysis of the observed pickup signal closely follow those imposed on the ions by the electron cooling force. The phenomenon can be exploited to measure the true revolution frequency of ion beams of very low intensity, whose pure Schottky noise is too weak to be measurable under normal circumstances.

Low-Arousal Speech Noise Improves Performance in N-Back Task: An ERP Study

Science.gov (United States)

Zhang, Dandan; Jin, Yi; Luo, Yuejia

2013-01-01

The relationship between noise and human performance is a crucial topic in ergonomic research. However, the brain dynamics of the emotional arousal effects of background noises are still unclear. The current study employed meaningless speech noises in the n-back working memory task to explore the changes of event-related potentials (ERPs) elicited by the noises with low arousal level vs. high arousal level. We found that the memory performance in low arousal condition were improved compared with the silent and the high arousal conditions; participants responded more quickly and had larger P2 and P3 amplitudes in low arousal condition while the performance and ERP components showed no significant difference between high arousal and silent conditions. These findings suggested that the emotional arousal dimension of background noises had a significant influence on human working memory performance, and that this effect was independent of the acoustic characteristics of noises (e.g., intensity) and the meaning of speech materials. The current findings improve our understanding of background noise effects on human performance and lay the ground for the investigation of patients with attention deficits. PMID:24204607

Low-arousal speech noise improves performance in N-back task: an ERP study.

Science.gov (United States)

Han, Longzhu; Liu, Yunzhe; Zhang, Dandan; Jin, Yi; Luo, Yuejia

2013-01-01

The relationship between noise and human performance is a crucial topic in ergonomic research. However, the brain dynamics of the emotional arousal effects of background noises are still unclear. The current study employed meaningless speech noises in the n-back working memory task to explore the changes of event-related potentials (ERPs) elicited by the noises with low arousal level vs. high arousal level. We found that the memory performance in low arousal condition were improved compared with the silent and the high arousal conditions; participants responded more quickly and had larger P2 and P3 amplitudes in low arousal condition while the performance and ERP components showed no significant difference between high arousal and silent conditions. These findings suggested that the emotional arousal dimension of background noises had a significant influence on human working memory performance, and that this effect was independent of the acoustic characteristics of noises (e.g., intensity) and the meaning of speech materials. The current findings improve our understanding of background noise effects on human performance and lay the ground for the investigation of patients with attention deficits.

Low-arousal speech noise improves performance in N-back task: an ERP study.

Directory of Open Access Journals (Sweden)

Longzhu Han

Full Text Available The relationship between noise and human performance is a crucial topic in ergonomic research. However, the brain dynamics of the emotional arousal effects of background noises are still unclear. The current study employed meaningless speech noises in the n-back working memory task to explore the changes of event-related potentials (ERPs elicited by the noises with low arousal level vs. high arousal level. We found that the memory performance in low arousal condition were improved compared with the silent and the high arousal conditions; participants responded more quickly and had larger P2 and P3 amplitudes in low arousal condition while the performance and ERP components showed no significant difference between high arousal and silent conditions. These findings suggested that the emotional arousal dimension of background noises had a significant influence on human working memory performance, and that this effect was independent of the acoustic characteristics of noises (e.g., intensity and the meaning of speech materials. The current findings improve our understanding of background noise effects on human performance and lay the ground for the investigation of patients with attention deficits.

InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

Science.gov (United States)

Deal, William R.; Chattopadhyay, Goutam

2012-01-01

The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

DEFF Research Database (Denmark)

Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

2005-01-01

We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

Indium antimonide based HEMT for RF applications

International Nuclear Information System (INIS)

Subash, T. D.; Gnanasekaran, T.

2014-01-01

We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system. (semiconductor materials)

An analysis of low frequency noise from large wind turbines

DEFF Research Database (Denmark)

Pedersen, Christian Sejer; Møller, Henrik

2010-01-01

As wind turbines get larger, worries have emerged, that the noise emitted by the turbines would move down in frequency, and that the contents of low-frequency noise would be enough to cause significant annoyance for the neighbors. The sound emission from 48 wind turbines with nominal electric power......-third-octave-band spectra shows that the relative noise emission is higher in the 63-250 Hz frequency range from turbines above 2 MW than from smaller turbines. The observations confirm a downward shift of the spectrum....

On low-frequency errors of uniformly modulated filtered white-noise models for ground motions

Science.gov (United States)

Safak, Erdal; Boore, David M.

1988-01-01

Low-frequency errors of a commonly used non-stationary stochastic model (uniformly modulated filtered white-noise model) for earthquake ground motions are investigated. It is shown both analytically and by numerical simulation that uniformly modulated filter white-noise-type models systematically overestimate the spectral response for periods longer than the effective duration of the earthquake, because of the built-in low-frequency errors in the model. The errors, which are significant for low-magnitude short-duration earthquakes, can be eliminated by using the filtered shot-noise-type models (i. e. white noise, modulated by the envelope first, and then filtered).

Detecting low-dimensional chaos by the “noise titration” technique: Possible problems and remedies

International Nuclear Information System (INIS)

Gao Jianbo; Hu Jing; Mao Xiang; Tung Wenwen

2012-01-01

Highlights: ► Distinguishing low-dimensional chaos from noise is an important issue. ► Noise titration technique is one of the main approaches on the issue. ► Problems of noise titration technique are systematically discussed. ► Solutions to the problems of noise titration technique are provided. - Abstract: Distinguishing low-dimensional chaos from noise is an important issue in time series analysis. Among the many methods proposed for this purpose is the noise titration technique, which quantifies the amount of noise that needs to be added to the signal to fully destroy its nonlinearity. Two groups of researchers recently have questioned the validity of the technique. In this paper, we report a broad range of situations where the noise titration technique fails, and offer solutions to fix the problems identified.

Generating Low Beta Regions with Quadrupoles for Final Muon Cooling

Energy Technology Data Exchange (ETDEWEB)

Acosta, J. G. [Mississippi U.; Cremaldi, L. M. [Mississippi U.; Hart, T. L. [Mississippi U.; Oliveros, S. J. [Mississippi U.; Summers, D. J. [Mississippi U.; Neuffer, D. V. [Fermilab

2017-05-01

Muon beams and colliders are rich sources of new physics, if muons can be cooled. A normalized rms transverse muon emittance of 280 microns has been achieved in simulation with short solenoids and a betatron function of 3 cm. Here we use ICOOL, G4beamline, and MAD-X to explore using a 400 MeV/c muon beam and strong focusing quadrupoles to approach a normalized transverse emittance of 100 microns and finish 6D muon cooling. The low beta regions produced by the quadrupoles are occupied by dense, low Z absorbers, such as lithium hydride or beryllium, that cool the beam. Equilibrium transverse emittance is linearly proportional to the beta function. Reverse emittance exchange with septa and/or wedges is then used to decrease transverse emittance from 100 to 25 microns at the expense of longitudinal emittance for a high energy lepton collider. Work remains to be done on chromaticity correction.

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Directory of Open Access Journals (Sweden)

Xiaoqing Xu

2016-11-01

Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Science.gov (United States)

Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

2017-07-01

Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

International Nuclear Information System (INIS)

Bickman, S.; DeMille, D.

2005-01-01

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/√(Hz), can recover from a large scattered light pulse within 10 μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/√(Hz), also can recover from a large scattered light pulse within 10 μs, and has a bandwidth of 1 MHz

Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.

Science.gov (United States)

Heo, Jun-Woo; Kim, Young-Jin; Kim, Hyun-Seok

2014-12-01

We report two approaches to fabricating high performance normally-off AIGaN/GaN high-electron mobility transistors (HEMTs). The fabrication techniques employed were based on recessed-metal-insulator-semiconductor (MIS) gate and recessed fluoride-based plasma treatment. They were selectively applied to the area under the gate electrode to deplete the two-dimensional electron gas (2-DEG) density. We found that the recessed gate structure was effective in shifting the threshold voltage by controlling the etching depth of gate region to reduce the AIGaN layer thickness to less than 8 nm. Likewise, the CF4 plasma treatment effectively incorporated negatively charged fluorine ions into the thin AIGaN barrier so that the threshold voltage shifted to higher positive values. In addition to the increased threshold voltage, experimental results showed a maximum drain current and a maximum transconductance of 315 mA/mm and 100 mS/mm, respectively, for the recessed-MIS gate HEMT, and 340 mA/mm and 330 mS/mm, respectively, for the fluoride-based plasma treated HEMT.

Quasi-periodic oscillations and noise in low-mass X-ray binaries

International Nuclear Information System (INIS)

Van der Klis, M.

1989-01-01

The phenomenology of quasi-periodic oscillations (QPOs) and noise in low-mass X-ray binaries (LMXBs) is discussed. Signal analysis aspects of QPO and noise are addressed along with the relationship between LMXBs and millisecond radio pulsars. The history and prehistory of QPOs and noise in LMXBs are examined. Universal noise components and normal and flaring branch QPOs in Z sources are described and the phenomenology of Z sources is discussed. Bright LMXBs known as atoll sources are considered, as are nonpersistently bright LMXBs accreting pulsars and black hole candidates. 162 refs

Low-Noise CMOS Circuits for On-Chip Signal Processing in Focal-Plane Arrays

Science.gov (United States)

Pain, Bedabrata

The performance of focal-plane arrays can be significantly enhanced through the use of on-chip signal processing. Novel, in-pixel, on-focal-plane, analog signal-processing circuits for high-performance imaging are presented in this thesis. The presence of a high background-radiation is a major impediment for infrared focal-plane array design. An in-pixel, background-suppression scheme, using dynamic analog current memory circuit, is described. The scheme also suppresses spatial noise that results from response non-uniformities of photo-detectors, leading to background limited infrared detector readout performance. Two new, low-power, compact, current memory circuits, optimized for operation at ultra-low current levels required in infrared-detection, are presented. The first one is a self-cascading current memory that increases the output impedance, and the second one is a novel, switch feed-through reducing current memory, implemented using error-current feedback. This circuit can operate with a residual absolute -error of less than 0.1%. The storage-time of the memory is long enough to also find applications in neural network circuits. In addition, a voltage-mode, accurate, low-offset, low-power, high-uniformity, random-access sample-and-hold cell, implemented using a CCD with feedback, is also presented for use in background-suppression and neural network applications. A new, low noise, ultra-low level signal readout technique, implemented by individually counting photo-electrons within the detection pixel, is presented. The output of each unit-cell is a digital word corresponding to the intensity of the photon flux, and the readout is noise free. This technique requires the use of unit-cell amplifiers that feature ultra-high-gain, low-power, self-biasing capability and noise in sub-electron levels. Both single-input and differential-input implementations of such amplifiers are investigated. A noise analysis technique is presented for analyzing sampled

A low-power and low-phase-noise LC digitally controlled oscillator featuring a novel capacitor bank

Energy Technology Data Exchange (ETDEWEB)

Tian Huanhuan; Li Zhiqiang; Chen Pufeng; Wu Rufei; Zhang Haiying, E-mail: thuan8@126.com [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

2010-12-15

A monolithic low-power and low-phase-noise digitally controlled oscillator (DCO) based on a symmetric spiral inductor with center-tap and novel capacitor bank was implemented in a 0.18 {mu}m CMOS process with six metal layers. A third new way to change capacitance is proposed and implemented in this work. Results show that the phase noise at 1 MHz offset frequency is below -122.5 dBc/Hz while drawing a current of only 4.8 mA from a 1.8 V supply. Also, the DCO can work at low supply voltage conditions with a 1.6 V power supply and 4.1 mA supply current for the DCO's core circuit, achieving a phase-noise of -21.5 dBc/Hz at offset of 1 MHz. It demonstrates that the supply pushing of DCO is less than 10 MHz/V. (semiconductor integrated circuits)

Cooled CdZnTe detectors for X-ray astronomy

CERN Document Server

Bale, G; Seller, P; Lowe, B

1999-01-01

Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

Advanced Low-Noise Research Fan Stage Design

Science.gov (United States)

Neubert, Robert; Bock, Larry; Malmborg, Eric; Owen-Peer, William

1997-01-01

This report describes the design of the Advanced Low-Noise Research Fan stage. The fan is a variable pitch design, which is designed at the cruise pitch condition. Relative to the cruise setting, the blade is closed at takeoff and opened for reverse thrust operation. The fan stage is a split flow design with fan exit guide vanes (FEGVs) and core stators. The fan stage design is combined with a nacelle and engine core duct to form a powered fan/nacelle subscale model. This model is intended for use in combined aerodynamic, acoustic, and structural testing in a wind tunnel. The fan has an outer diameter of 22 in. and a hub-to-tip of 0.426 in., which allows the use of existing NASA fan and cowl force balance and rig drive systems. The design parameters were selected to permit valid acoustic and aerodynamic comparisons with the Pratt & Whitney (P&W) 17- and 22-in. rigs previously tested under NASA contract. The fan stage design is described in detail. The results of the design axisymmetric and Navier-Stokes aerodynamic analysis are presented at the critical design conditions. The structural analysis of the fan rotor and attachment is included. The blade and attachment are predicted to have adequate low-cycle fatigue life and an acceptable operating range without resonant stress or flutter. The stage was acoustically designed with airfoil counts in the FEGV and core stator to minimize noise. A fan/FEGV tone analysis developed separately under NASA contract was used to determine the optimum airfoil counts. The fan stage was matched to the existing nacelle, designed under the previous P&W low-noise contract, to form a fan/nacelle model for wind tunnel testing. It is an axisymmetric nacelle for convenience in testing and analysis. Previous testing confirmed that the nacelle performed as required at various aircraft operating conditions.

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

Science.gov (United States)

McGrath, W. R.

1995-01-01

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

EUDP project 'Low noise airfoil' - Final report

Energy Technology Data Exchange (ETDEWEB)

Bertagnolio, F. (ed.)

2012-06-15

This document summarizes the scientific results achieved during the EUDP-funded project 'Low-Noise Airfoil'. The goals of this project are, on one side to develop a measurement technique that permits the evaluation of trailing edge noise in a classical aerodynamic wind tunnel, and on the other side to develop and implement a design procedure to manufacture airfoil profiles with low noise emission. The project involved two experimental campaigns: one in the LM Wind Power wind tunnel, a classical aerodynamic wind tunnel, in Lunderskov (Denmark), the second one in the Virginia Tech Stability Wind Tunnel at the Aerospace and Ocean Engineering Department of Virginia Tech (Blacksburg, VA, USA), also a classical aerodynamic wind tunnel but equipped with an anechoic chamber that allow to perform acoustic measurements. On the theoretical side, the above experiments yield a series of model validations and improvements. In particular, the so-called TNO trailing edge noise model could be significantly improved by introducing turbulence anisotropy in its formulation, as well as the influence of the boundary layer mean pressure gradient. This two characteristics are inherent to airfoil flows but were neglected in the original approach. In addition, the experimental results are confronted to detailed Large Eddy Simulations of the airfoil flow giving more insight into the flow turbulence characteristics. The methodology which consists in measuring surface pressure spectra directly on the airfoil surface using flush-mounted microphones in order to evaluate far-field noise emission using additional theoretical results has been validated. This technique presents the advantage that it can easily be used in a classical aerodynamic wind tunnel and does not require the use of an anechoic facility. It was developed as a substitute to the original plan that consisted in measuring acoustic waves using hot-wire velocimetry. This last technique proved ineffective in the LM Wind

Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

International Nuclear Information System (INIS)

Zhao, Jing; Zhang, Yi; Krause, Hans-Joachim; Lee, Yong-Ho

2014-01-01

We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs

Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

Science.gov (United States)

Zhao, Jing; Zhang, Yi; Lee, Yong-Ho; Krause, Hans-Joachim

2014-05-01

We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.

Demonstration of a switchable damping system to allow low-noise operation of high-Q low-mass suspension systems

Science.gov (United States)

Hennig, Jan-Simon; Barr, Bryan W.; Bell, Angus S.; Cunningham, William; Danilishin, Stefan L.; Dupej, Peter; Gräf, Christian; Hough, James; Huttner, Sabina H.; Jones, Russell; Leavey, Sean S.; Pascucci, Daniela; Sinclair, Martin; Sorazu, Borja; Spencer, Andrew; Steinlechner, Sebastian; Strain, Kenneth A.; Wright, Jennifer; Zhang, Teng; Hild, Stefan

2017-12-01

Low-mass suspension systems with high-Q pendulum stages are used to enable quantum radiation pressure noise limited experiments. Utilizing multiple pendulum stages with vertical blade springs and materials with high-quality factors provides attenuation of seismic and thermal noise; however, damping of these high-Q pendulum systems in multiple degrees of freedom is essential for practical implementation. Viscous damping such as eddy-current damping can be employed, but it introduces displacement noise from force noise due to thermal fluctuations in the damping system. In this paper we demonstrate a passive damping system with adjustable damping strength as a solution for this problem that can be used for low-mass suspension systems without adding additional displacement noise in science mode. We show a reduction of the damping factor by a factor of 8 on a test suspension and provide a general optimization for this system.

Longitudinal Schottky noise of intense beam

International Nuclear Information System (INIS)

Pestrikov, D.V.

1990-01-01

Some phenomena, which can be observed in the longitudinal Schottky spectra in storage ring with electron cooling as well as some technical details, which can be useful for the models of fitting are reviewed. Results shows that both the spectra and the power of the Schottky noise of the coasting beam are very sensitive to collective behaviour of the beam. This can be used for fitting of Schottky noise measurements and recalculation of beam parameters, parameters of cooling device. 9 refs.; 4 figs

Infrasound and low frequency noise from wind turbines: exposure and health effects

Energy Technology Data Exchange (ETDEWEB)

Bolin, Karl [Marcus Wallenberg Laboratory, Department of Aeronautical and Vehicle Engineering, Kungliga Tekniska Hoegskolan (Sweden); Bluhm, Goesta; Nilsson, Mats E [Institute of Environmental Medicine, Karolinska Institutet (Sweden); Eriksson, Gabriella, E-mail: kbolin@kth.se [Swedish National Road and Transport Research Institute and Linkoeping University (Sweden)

2011-07-15

Wind turbines emit low frequency noise (LFN) and large turbines generally generate more LFN than small turbines. The dominant source of LFN is the interaction between incoming turbulence and the blades. Measurements suggest that indoor levels of LFN in dwellings typically are within recommended guideline values, provided that the outdoor level does not exceed corresponding guidelines for facade exposure. Three cross-sectional questionnaire studies show that annoyance from wind turbine noise is related to the immission level, but several explanations other than low frequency noise are probable. A statistically significant association between noise levels and self-reported sleep disturbance was found in two of the three studies. It has been suggested that LFN from wind turbines causes other, and more serious, health problems, but empirical support for these claims is lacking.

Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

OpenAIRE

Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

2004-01-01

Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching d...

Low noise cryogenic receiver for spectroscopic applications in mm-wave radioastronomy at 230 GHz

International Nuclear Information System (INIS)

Pagani, L.; Ruffie, G.; Beaudin, G.; Gheudin, M.; Deschamps, A.

1986-01-01

A new cooled mm-wave receiver is presented. This receiver has been in operation since October 1985 with a 2.5 m Cassegrain telescope located at the Plateau de Bure in the French Alps. It is tunable from 210 to 240 GHz and has a DSB system noise temperature of 360 K and a 600 MHz instantaneous bandwidth. The receiver is composed of a local oscillator (klystron frequency tripler) and a Schottky diode mixer with a cooled FET amplifier. Quasi-optical techniques are used for signal injection. A computer-controlled microprocessor drives the whole system and performs calibration and frequency tuning of the receiver. The different parts of the receiver, frequency tripler, quasi-optical techniques, mixer, FET amplifier, and microprocessor, are described. 13 references

Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

International Nuclear Information System (INIS)

Chou, Po-Chien; Cheng, Stone

2015-01-01

Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit

Analysis of the thermal behavior of AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Russo, Salvatore; D’Alessandro, Vincenzo; Costagliola, Maurizio; Sasso, Grazia; Rinaldi, Niccolò

2012-01-01

Highlights: ► The thermal behavior of advanced multifinger AlGaN/GaN HEMTs grown on SiC is analyzed. ► The study is performed through accurate FEM simulations and DC/dynamic measurements. ► The FEM analysis is supported by an in-house tool devised for a smart mesh generation. ► Illustrative technology/layout guidelines to minimize the thermal issues are provided. - Abstract: The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations – based on a novel in-house tool devised to automatically build the device mesh – are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

Energy Technology Data Exchange (ETDEWEB)

Chou, Po-Chien; Cheng, Stone, E-mail: stonecheng@mail.nctu.edu.tw

2015-08-15

Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

Monocrystalline fibres for low thermal noise suspension in advanced gravitational wave detectors

International Nuclear Information System (INIS)

Amico, P; Bosi, L; Gammaitoni, L; Losurdo, G; Marchesoni, F; Mazzoni, M; Parisi, D; Punturo, M; Stanga, R; Toncelli, A; Tonelli, M; Travasso, F; Vetrano, F; Vocca, H

2004-01-01

Thermal noise in mirror suspension will be the most severe fundamental limit to the low-frequency sensitivity of future interferometric gravitational wave detectors. We propose a new type of materials to realize low thermal noise suspension in such detectors. Monocrystalline suspension fibres are good candidates both for cryogenic and for ambient temperature interferometers. Material characteristics and a production facility are described in this paper

Monocrystalline fibres for low thermal noise suspension in advanced gravitational wave detectors

Energy Technology Data Exchange (ETDEWEB)

Amico, P [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy); Bosi, L [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy); Gammaitoni, L [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy); Losurdo, G [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze/Urbino, Florence (Italy); Marchesoni, F [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy); Mazzoni, M [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze/Urbino, Florence (Italy); Parisi, D [NEST-Dipartimento di Fisica, Universita di Pisa, Pisa (Italy); Punturo, M [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy); Stanga, R [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze/Urbino, Florence (Italy); Toncelli, A [Istituto Nazionale di Fisica Nucleare, Sezione di Pisa, Pisa (Italy); Tonelli, M [Istituto Nazionale di Fisica Nucleare, Sezione di Pisa, Pisa (Italy); Travasso, F [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy); Vetrano, F [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze/Urbino, Florence (Italy); Vocca, H [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Virgo Project, I-06100 Perugia (Italy)

2004-03-07

Thermal noise in mirror suspension will be the most severe fundamental limit to the low-frequency sensitivity of future interferometric gravitational wave detectors. We propose a new type of materials to realize low thermal noise suspension in such detectors. Monocrystalline suspension fibres are good candidates both for cryogenic and for ambient temperature interferometers. Material characteristics and a production facility are described in this paper.

Radiation detection at very low temperature. DRTBT 1992 -Londe-Les-Maures - Course collection

International Nuclear Information System (INIS)

Bellefon, A. de; Serra, Guy; Broniatowski, A.; Giraud-Heraud, Y.; Bruere Dawson, R.; Waysand, G.; Maneval, J.P.; Jacquier, B.; Leotin, J.; Chapellier, M.; Beaudin, G.; Encrenaz, P.; Gheudin, M.; Lamarre, J.M.; Ravex, A.; Godfrin, H.; Bret, J.L.; Gianese, Chr.; Torre, J.P.; Marcillac, P. de; Benoit, A.; Jegoudez, G.; Pari, P.

1992-09-01

The contributions addressed various themes: Cooled sensors, what are they for? (Search for rare events; Astrophysics, X rays and infrared, Spectrometry in nuclear physics); Cooled sensors (Bolometer physics, Bolometers for photometry, Bolometers for particle detection, Superconducting sensors, Other types of bolometers, Low temperature luminescence, Photo-conductors and photovoltaic BIB, Ionisation at very low temperature, Heterodyne detection); Problems related to the signal (Photometry and external measurement noise, Line, amplification and signal processing), Pulse measurement (Line and amplification, Signal processing), Cryogenics (Cryogenic machines, Very low temperature cryogenics, Noise and environment). Nota: contributions are printed in a different order than they are listed in the table of contents

Noise characteristics of resistors buried in low-temperature co-fired ceramics

International Nuclear Information System (INIS)

Kolek, A; Ptak, P; Dziedzic, A

2003-01-01

The comparison of noise properties of conventional thick film resistors prepared on alumina substrates and resistors embedded in low-temperature co-fired ceramics (LTCCs) is presented. Both types of resistors were prepared from commercially available resistive inks. Noise measurements of LTCC resistors below 1 kHz show Gaussian 1/f noise. This is concluded from the calculations of the second spectra as well as from studying the volume dependence of noise intensity. It has occurred that noise index of LTCC resistors on average is not worse than that of conventional resistors. A detailed study of co-fired surface resistors and co-fired buried resistors show that burying a resistor within LTCC substrate usually leads to (significant) enhancement of resistance but not of noise intensity. We interpret this behaviour as another argument in favour of tunnelling as the dominant conduction mechanism in LTCC resistors

Stacking with stochastic cooling

Energy Technology Data Exchange (ETDEWEB)

Caspers, Fritz E-mail: Fritz.Caspers@cern.ch; Moehl, Dieter

2004-10-11

Accumulation of large stacks of antiprotons or ions with the aid of stochastic cooling is more delicate than cooling a constant intensity beam. Basically the difficulty stems from the fact that the optimized gain and the cooling rate are inversely proportional to the number of particles 'seen' by the cooling system. Therefore, to maintain fast stacking, the newly injected batch has to be strongly 'protected' from the Schottky noise of the stack. Vice versa the stack has to be efficiently 'shielded' against the high gain cooling system for the injected beam. In the antiproton accumulators with stacking ratios up to 10{sup 5} the problem is solved by radial separation of the injection and the stack orbits in a region of large dispersion. An array of several tapered cooling systems with a matched gain profile provides a continuous particle flux towards the high-density stack core. Shielding of the different systems from each other is obtained both through the spatial separation and via the revolution frequencies (filters). In the 'old AA', where the antiproton collection and stacking was done in one single ring, the injected beam was further shielded during cooling by means of a movable shutter. The complexity of these systems is very high. For more modest stacking ratios, one might use azimuthal rather than radial separation of stack and injected beam. Schematically half of the circumference would be used to accept and cool new beam and the remainder to house the stack. Fast gating is then required between the high gain cooling of the injected beam and the low gain stack cooling. RF-gymnastics are used to merge the pre-cooled batch with the stack, to re-create free space for the next injection, and to capture the new batch. This scheme is less demanding for the storage ring lattice, but at the expense of some reduction in stacking rate. The talk reviews the 'radial' separation schemes and also gives some

Detection of low-contrast images in film-grain noise.

Science.gov (United States)

Naderi, F; Sawchuk, A A

1978-09-15

When low contrast photographic images are digitized by a very small aperture, extreme film-grain noise almost completely obliterates the image information. Using a large aperture to average out the noise destroys the fine details of the image. In these situations conventional statistical restoration techniques have little effect, and well chosen heuristic algorithms have yielded better results. In this paper we analyze the noisecheating algorithm of Zweig et al. [J. Opt. Soc. Am. 65, 1347 (1975)] and show that it can be justified by classical maximum-likelihood detection theory. A more general algorithm applicable to a broader class of images is then developed by considering the signal-dependent nature of film-grain noise. Finally, a Bayesian detection algorithm with improved performance is presented.

Mixed structures in continuously cooled low-carbon automotive steels

International Nuclear Information System (INIS)

Khalid, F.A.; Edmonds, D.V.

1993-01-01

Mixed microstructures have been studied in low- carbon microalloyed steels suitable for automotive applications, after continuous cooling from the hot-rolled condition. Microstructural features such as polygonal ferrite, bainitic and acicular ferrite and microphase constituent are identified using transmission electron microscopy. The influence of these mixed structures on the tensile strength, impact toughness and fracture behaviour is examined. It is found that improvements in impact toughness as compared with microalloyed medium- carbon ferrite/pearlite steels can be achieved from these predominantly acicular structures developed by controlling alloy composition and continuous cooling of these lower carbon steels. (orig.)

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

Science.gov (United States)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

A Shearlet-based algorithm for quantum noise removal in low-dose CT images

Science.gov (United States)

Zhang, Aguan; Jiang, Huiqin; Ma, Ling; Liu, Yumin; Yang, Xiaopeng

2016-03-01

Low-dose CT (LDCT) scanning is a potential way to reduce the radiation exposure of X-ray in the population. It is necessary to improve the quality of low-dose CT images. In this paper, we propose an effective algorithm for quantum noise removal in LDCT images using shearlet transform. Because the quantum noise can be simulated by Poisson process, we first transform the quantum noise by using anscombe variance stabilizing transform (VST), producing an approximately Gaussian noise with unitary variance. Second, the non-noise shearlet coefficients are obtained by adaptive hard-threshold processing in shearlet domain. Third, we reconstruct the de-noised image using the inverse shearlet transform. Finally, an anscombe inverse transform is applied to the de-noised image, which can produce the improved image. The main contribution is to combine the anscombe VST with the shearlet transform. By this way, edge coefficients and noise coefficients can be separated from high frequency sub-bands effectively. A number of experiments are performed over some LDCT images by using the proposed method. Both quantitative and visual results show that the proposed method can effectively reduce the quantum noise while enhancing the subtle details. It has certain value in clinical application.

Poisson–Gaussian Noise Analysis and Estimation for Low-Dose X-ray Images in the NSCT Domain

Science.gov (United States)

Lee, Sangyoon; Lee, Min Seok; Kang, Moon Gi

2018-01-01

The noise distribution of images obtained by X-ray sensors in low-dosage situations can be analyzed using the Poisson and Gaussian mixture model. Multiscale conversion is one of the most popular noise reduction methods used in recent years. Estimation of the noise distribution of each subband in the multiscale domain is the most important factor in performing noise reduction, with non-subsampled contourlet transform (NSCT) representing an effective method for scale and direction decomposition. In this study, we use artificially generated noise to analyze and estimate the Poisson–Gaussian noise of low-dose X-ray images in the NSCT domain. The noise distribution of the subband coefficients is analyzed using the noiseless low-band coefficients and the variance of the noisy subband coefficients. The noise-after-transform also follows a Poisson–Gaussian distribution, and the relationship between the noise parameters of the subband and the full-band image is identified. We then analyze noise of actual images to validate the theoretical analysis. Comparison of the proposed noise estimation method with an existing noise reduction method confirms that the proposed method outperforms traditional methods. PMID:29596335

Poisson-Gaussian Noise Analysis and Estimation for Low-Dose X-ray Images in the NSCT Domain.

Science.gov (United States)

Lee, Sangyoon; Lee, Min Seok; Kang, Moon Gi

2018-03-29

The noise distribution of images obtained by X-ray sensors in low-dosage situations can be analyzed using the Poisson and Gaussian mixture model. Multiscale conversion is one of the most popular noise reduction methods used in recent years. Estimation of the noise distribution of each subband in the multiscale domain is the most important factor in performing noise reduction, with non-subsampled contourlet transform (NSCT) representing an effective method for scale and direction decomposition. In this study, we use artificially generated noise to analyze and estimate the Poisson-Gaussian noise of low-dose X-ray images in the NSCT domain. The noise distribution of the subband coefficients is analyzed using the noiseless low-band coefficients and the variance of the noisy subband coefficients. The noise-after-transform also follows a Poisson-Gaussian distribution, and the relationship between the noise parameters of the subband and the full-band image is identified. We then analyze noise of actual images to validate the theoretical analysis. Comparison of the proposed noise estimation method with an existing noise reduction method confirms that the proposed method outperforms traditional methods.

A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications

International Nuclear Information System (INIS)

Zhang Jihong; Bai Xuefei; Huang Lu

2013-01-01

A wideband inductorless low noise amplifier for digital TV tuner applications is presented. The proposed LNA scheme uses a composite NMOS/PMOS cross-coupled transistor pair to provide partial cancellation of noise generated by the input transistors. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed LNA achieves 12.2–15.2 dB voltage gain from 300 to 900 MHz, the noise figure is below 3.1 dB and has a minimum value of 2.3 dB, and the best input-referred 1-dB compression point (IP1dB) is − 17 dBm at 900 MHz. The core consumes 7 mA current with a supply voltage of 1.8 V and occupies an area of 0.5 × 0.35 mm 2 . (semiconductor integrated circuits)

Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

CERN Document Server

Sohn, M K; Kim, K H; Yang, S G; Seo, K S

1998-01-01

In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

Feasibility and economic evaluation of low-cost evaporative cooling ...

African Journals Online (AJOL)

Feasibility and economic evaluation of low-cost evaporative cooling system in fruit and vegetables storage. ... on fruit and vegetables quality during harvesting, transportation, storage and marketing. ... The coolers were found to be effective in maintaining micro-environmental conditions for ... AJOL African Journals Online.

Low grade heat driven adsorption system for cooling and power generation using advanced adsorbent materials

International Nuclear Information System (INIS)

Al-Mousawi, Fadhel Noraldeen; Al-Dadah, Raya; Mahmoud, Saad

2016-01-01

Highlights: • Adsorption system based on water and advanced physical adsorbents has the potential of producing cooling and power. • Adding an expander to physisorption system enhances efficiency by up to 11%. • MIL101Cr MOF can produce 95 W/kg and 1357 W/kg of specific power and cooling. • AQSOA Z02 can produce 73 W/kg and 640 W/kg of specific power and cooling. - Abstract: Globally there is abundance of low grade heat sources (around 150 °C) from renewables like solar energy or from industrial waste heat. The exploitation of such low grade heat sources will reduce fossil fuel consumption and CO_2 emissions. Adsorption technology offers the potential of using such low grade heat to generate cooling and power. In this work, the effect of using advanced adsorbent materials like AQSOA-Z02 (SAPO-34) zeolite and MIL101Cr Metal Organic Framework (MOF) at various operating conditions on power and cooling performance compared to that of commonly used silica-gel was investigated using water as refrigerant. A mathematical model for a two bed adsorption cooling cycle has been developed with the cycle modified to produce power by incorporating an expander between the desorber and the condenser. Results show that it is possible to produce power and cooling at the same time without affecting the cooling output. Results also show that for all adsorbents used as the heat source temperature increases, the cooling effect and power generated increase. As for increasing the cold bed temperature, this will decrease the cooling effect and power output except for SAPO-34 which shows slightly increasing trend of cooling and power output. As the condenser cooling temperature increases, the cooling effect and power output will decrease while for the chilled water temperature, the cooling load and power generated increased as the temperature increased. The maximum values of average specific power generation (SP), specific cooling power (SCP) and cycle efficiency are 73 W

Continuous exposure to low-frequency noise and carbon disulfide: Combined effects on hearing.

Science.gov (United States)

Venet, Thomas; Carreres-Pons, Maria; Chalansonnet, Monique; Thomas, Aurélie; Merlen, Lise; Nunge, Hervé; Bonfanti, Elodie; Cosnier, Frédéric; Llorens, Jordi; Campo, Pierre

2017-09-01

Carbon disulfide (CS 2 ) is used in industry; it has been shown to have neurotoxic effects, causing central and distal axonopathies.However, it is not considered cochleotoxic as it does not affect hair cells in the organ of Corti, and the only auditory effects reported in the literature were confined to the low-frequency region. No reports on the effects of combined exposure to low-frequency noise and CS 2 have been published to date. This article focuses on the effects on rat hearing of combined exposure to noise with increasing concentrations of CS 2 (0, 63,250, and 500ppm, 6h per day, 5 days per week, for 4 weeks). The noise used was a low-frequency noise ranging from 0.5 to 2kHz at an intensity of 106dB SPL. Auditory function was tested using distortion product oto-acoustic emissions, which mainly reflects the cochlear performances. Exposure to noise alone caused an auditory deficit in a frequency area ranging from 3.6 to 6 kHz. The damaged area was approximately one octave (6kHz) above the highest frequency of the exposure noise (2.8kHz); it was a little wider than expected based on the noise spectrum.Consequently, since maximum hearing sensitivity is located around 8kHz in rats, low-frequency noise exposure can affect the cochlear regions detecting mid-range frequencies. Co-exposure to CS 2 (250-ppm and over) and noise increased the extent of the damaged frequency window since a significant auditory deficit was measured at 9.6kHz in these conditions.Moreover, the significance at 9.6kHz increased with the solvent concentrations. Histological data showed that neither hair cells nor ganglion cells were damaged by CS 2 . This discrepancy between functional and histological data is discussed. Like most aromatic solvents, carbon disulfide should be considered as a key parameter in hearing conservation régulations. Copyright © 2017 Elsevier B.V. All rights reserved.

An analytical turn-on power loss model for 650-V GaN eHEMTs

DEFF Research Database (Denmark)

Shen, Yanfeng; Wang, Huai; Shen, Zhan

2018-01-01

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d...

Heating up the gas cooling market

International Nuclear Information System (INIS)

Watt, G.

2001-01-01

Gas cooling is an exciting technology with a potentially bright future. It comprises the production of cooling (and heating) in buildings and industry, by substituting environmentally-friendlier natural gas or LPG over predominantly coal-fired electricity in air conditioning equipment. There are currently four established technologies using gas to provide cooling energy or conditioned air. These are: absorption, both direct gas-fired and utilising hot water or steam; gas engine driven vapour compression (GED); cogeneration, with absorption cooling driven by recovered heat; and desiccant systems. The emergence of gas cooling technologies has been, and remains, one of evolution rather than revolution. However, further development of the technology has had a revolutionary effect on the performance, reliability and consumer acceptability of gas cooling products. Developments from world-renowned manufacturers such as York, Hitachi, Robur and Thermax have produced a range of absorption equipment variously offering: the use of 100 percent environmentally-friendly refrigerants, with zero global warming potential; the ideal utilisation of waste heat from cogeneration systems; a reduction in electrical distribution and stand-by generation capacity; long product life expectancy; far less noise and vibration; performance efficiency maintained down to about 20 percent of load capacity; and highly automated and low-cost maintenance. It is expected that hybrid systems, that is a mixture of gas and electric cooling technologies, will dominate the future market, reflecting the uncertainty in the electricity market and the prospects of stable future gas prices

Active cooling of an audio-frequency electrical resonator to microkelvin temperatures

Science.gov (United States)

Vinante, A.; Bonaldi, M.; Mezzena, R.; Falferi, P.

2010-11-01

We have cooled a macroscopic LC electrical resonator using feedback-cooling combined with an ultrasensitive dc Superconducting Quantum Interference Device (SQUID) current amplifier. The resonator, with resonance frequency of 11.5 kHz and bath temperature of 135 mK, is operated in the high coupling limit so that the SQUID back-action noise overcomes the intrinsic resonator thermal noise. The effect of correlations between the amplifier noise sources clearly show up in the experimental data, as well as the interplay of the amplifier noise with the resonator thermal noise. The lowest temperature achieved by feedback is 14 μK, corresponding to 26 resonator photons, and approaches the limit imposed by the noise energy of the SQUID amplifier.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

Science.gov (United States)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Muon Signals at a Low Signal-to-Noise Ratio Environment

CERN Document Server

Zakareishvili, Tamar; The ATLAS collaboration

2017-01-01

Calorimeters provide high-resolution energy measurements for particle detection. Muon signals are important for evaluating electronics performance, since they produce a signal that is close to electronic noise values. This work provides a noise RMS analysis for the Demonstrator drawer of the 2016 Tile Calorimeter (TileCal) Test Beam in order to help reconstruct events in a low signal-to-noise environment. Muon signals were then found for a beam penetrating through all three layers of the drawer. The Demonstrator drawer is an electronic candidate for TileCal, part of the ATLAS experiment for the Large Hadron Collider that operates at the European Organization for Nuclear Research (CERN).

An acoustic vector based approach to locate low frequency noise sources in 3D

NARCIS (Netherlands)

Bree, H.-E. de; Ostendorf, C.; Basten, T.

2009-01-01

Although low frequency noise is an issue of huge societal importance, traditional acoustic testing methods have limitations in finding the low frequency source. It is hard to determine the direction of the noise using traditional microphones. Three dimensional sound probes capturing the particle

Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors

Directory of Open Access Journals (Sweden)

BECHLAGHEM Fatima Zohra

2017-10-01

Full Text Available Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures especially at millimeter-wave frequencies. In this work, a short gate length pseudomorphic HEMT "p-HEMT" on GaAs substrate is treated. As temperature dependence study is a very important part of the complete characterization on active devices, the impact of temperature variation on the electrical properties of our 30nm short gate length pseudomorphic high-electron mobility In0.15Ga0.85As device is investigated. All our static DC device characteristics and RF response have been obtained using a device simulator that is Silvaco software to examine temperature impact on our device output current, transconductance and cutoff frequency. The 30nm gate pseudomorphic HEMT reported here exhibit superior DC and RF performances, Our results reveals a maximum drain-source current IDS up to 537.16 mA/mm, a peak extrinsic transconductance Gm of 345.4 mS/mm, a cutoff frequency Ft of 285.9 GHz, and a maximum frequency Fmax of 1580 GHz at room temperature.

Electron beam irradiation effect on GaN HEMT

International Nuclear Information System (INIS)

Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

2011-01-01

In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

International Nuclear Information System (INIS)

Zhong Yinghui; Zhang Yuming; Wang Xiantai; Su Yongbo; Cao Yuxiong; Jin Zhi; Liu Xinyu

2012-01-01

We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz. The characteristics of HEMTs with side-etched region lengths (L side ) of 300, 412 and 1070 nm were analyzed. With the increase in L side , the kink effect became notable in the DC characteristics, which resulted from the surface state and the effect of impact ionization. The kink effect was qualitatively explained through energy band diagrams, and then eased off by reducing the L side . Meanwhile, the L side dependence of the radio frequency characteristics, which were influenced by the parasitic capacitance, as well as the parasitic resistance of the source and drain, was studied. This work will be of great importance in fabricating high-performance InP HEMTs. (semiconductor devices)

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

Science.gov (United States)

Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

2009-01-01

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

Combination of low energy and mechanical cooling technologies for buildings in Central Europe

NARCIS (Netherlands)

Lain, M.; Hensen, J.L.M.

2004-01-01

This paper discusses options for incorporating low energy cooling technologies combined with standard mechanical cooling in buildings in central Europe. Case studies, design recommendations and role of computer simulation of building and system in the design process are presented. Applicability of

Development of a rating procedure for low frequency noise : Results of measurements near runways

NARCIS (Netherlands)

Buikema, E.; Vercammen, M.; Ploeg, F. van der; Granneman, J.; Vos, J.

2010-01-01

Recent issues concerning low frequency aircraft noise around airports (groundnoise) and a legal verdict about the application of low frequency noise criteria in the Netherlands have been the motivation to start a research commissioned by the Dutch Ministry of Housing, Spatial Planning and the

Low-noise, transformer-coupled resonant photodetector for squeezed state generation.

Science.gov (United States)

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8×10 5 V/A, and the input current noise of less than 4.7 pA/Hz. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Greenlee, Jordan D.; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

2015-01-01

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10 14 H + /cm 2 , the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375 (United States); Specht, Petra; Dubon, Oscar D. [University of California at Berkeley, Berkeley, California 94720 (United States); Luysberg, Martina [ERC, Research Center Juelich GmbH, 52425 Juelich (Germany); Weatherford, Todd R. [Naval Postgraduate School, Monterey, California 93943 (United States)

2015-08-24

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

Low frequency noise from large wind turbines - updated 2011; Lavfrekvent stoej fra store vindmoeller - opdateret 2011

Energy Technology Data Exchange (ETDEWEB)

Moeller, H.; Sejer Pedersen, C.; Pedersen, Steffen

2011-07-01

The study analyzed measurements of noise from 65 wind turbines, 25 large turbines (2.3 to 3.6 MW) and 40 small ones (up to 2 MW). The large mills (2.3 to 3.6 MW) emit relatively more low frequency noise than the small ones (up to 2 MW). The difference is statistically significant for the frequency range 63-250 Hz, regardless of whether calculations are performed on all the large mills or only on new wind turbines. There are no significant differences between prototype turbines and the new mills. Because of wind noise in the measurements of the small mills, it is not possible to determine whether the difference between small and large turbines continues further down in frequency. Looking at the A-weighted sound pressure in relevant neighbor distances, the lower frequencies constitute an essential part of the noise from the large mills, and there is no doubt that the low frequency noise is both audible and annoying. When the total A-weighted sound pressure level is the same, there will on average be about 3 dB more low frequency noise from large turbines than from small ones. At large distances the noise character becomes yet more low frequency because atmospheric absorption reduces the high frequencies more than the low frequencies. Depending on the sound insulation the low frequency noise can also be annoying indoors. If the total A-weighted sound pressure level outdoors is 44 dB, the low frequency noise can be heard indoors in all the houses and for all the large turbines. The sound pressure level will in many cases exceed the indoor limit for evening night at 20 dB. (ln)

Stochastic cooling at Fermilab

International Nuclear Information System (INIS)

Marriner, J.

1986-08-01

The topics discussed are the stochastic cooling systems in use at Fermilab and some of the techniques that have been employed to meet the particular requirements of the anti-proton source. Stochastic cooling at Fermilab became of paramount importance about 5 years ago when the anti-proton source group at Fermilab abandoned the electron cooling ring in favor of a high flux anti-proton source which relied solely on stochastic cooling to achieve the phase space densities necessary for colliding proton and anti-proton beams. The Fermilab systems have constituted a substantial advance in the techniques of cooling including: large pickup arrays operating at microwave frequencies, extensive use of cryogenic techniques to reduce thermal noise, super-conducting notch filters, and the development of tools for controlling and for accurately phasing the system

Automated system for noise-measurements on low-ohmic samples and magnetic sensors

NARCIS (Netherlands)

Jonker, R.J.W.; Briaire, J.; Vandamme, L.K.J.

1999-01-01

An automated system for electronic noise measurements on metal films is presented. This new system, controlled by a personal computer which utilizes National Instruments' LabVIEW software, is designed to measure low frequency noise as a function of an externally imposed magnetic field and as a

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Science.gov (United States)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Science.gov (United States)

Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

2018-03-01

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

2016-01-01

A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

Science.gov (United States)

Deen, M. Jamal; Pascal, Fabien

2003-05-01

For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

Directory of Open Access Journals (Sweden)

Dong-Hwan Shin

2017-10-01

Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

Ultra-low noise TES bolometer arrays for SAFARI instrument on SPICA

Science.gov (United States)

Khosropanah, P.; Suzuki, T.; Ridder, M. L.; Hijmering, R. A.; Akamatsu, H.; Gottardi, L.; van der Kuur, J.; Gao, J. R.; Jackson, B. D.

2016-07-01

SRON is developing ultra-low noise Transition Edge Sensors (TESs) based on a superconducting Ti/Au bilayer on a suspended SiN island with SiN legs for the SAFARI instrument aboard the SPICA mission. We successfully fabricated TESs with very narrow (0.5-0.7 μm) and thin (0.25 μm) SiN legs on different sizes of SiN islands using deep reactiveion etching process. The pixel size is 840x840 μm2 and there are variety of designs with and without optical absorbers. For TESs without absorbers, we measured electrical NEPs as low as <1x10-19 W/√Hz with response time of 0.3 ms and reached the phonon noise limit. Using TESs with absorbers, we quantified the darkness of our setup and confirmed a photon noise level of 2x10-19 W/√Hz.

A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

International Nuclear Information System (INIS)

Binkley, D.M.; Paulus, M.J.; Casey, M.E.; Rochelle, J.M.

1992-01-01

In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2μ CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6nV/Hz 1/2 , and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--kΩ to 50-kΩ range

Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

NARCIS (Netherlands)

Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

2005-01-01

In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

A study of twenty-one cases of low-frequency noise complaints

DEFF Research Database (Denmark)

Pedersen, Christian Sejer; Møller, Henrik; Persson-Waye, Kerstin

2008-01-01

-frequency tinnitus. Noise recordings were made in the homes of the complainants, and the complainants were exposed to these in blind test listening experiments. Furthermore, the low-frequency hearing function of the complainants was investigated, and characteristics of the annoying sound was matched. The results...... showed that some of the complainants are annoyed by a physical sound (20-180 Hz), while others suffer from low-frequency tinnitus (perceived frequency 40-100 Hz). Physical sound at frequencies below 20 Hz (infrasound) is not responsible for the annoyance - or at all audible - in any of the investigated...... cases, and none of the complainants has extraordinary hearing sensitivity at low frequencies. For comparable cases of low-frequency noise complaints in general, it is anticipated that physical sound is responsible in a substantial part of the cases, while lowfrequency tinnitus is responsible in another...

Effects of deformation and boron on microstructure and continuous cooling transformation in low carbon HSLA steels

Energy Technology Data Exchange (ETDEWEB)

Jun, H.J. [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Kang, J.S. [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Seo, D.H. [Technical Research Laboratories, POSCO, Pohang 545-090 (Korea, Republic of); Kang, K.B. [Technical Research Laboratories, POSCO, Pohang 545-090 (Korea, Republic of); Park, C.G. [Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)]. E-mail: cgpark@postech.ac.kr

2006-04-25

The continuous-cooling-transformation (CCT) diagram and continuous cooled microstructure were investigated for low carbon (0.05 wt.% C) high strength low alloy steels with/without boron. Microstructures observed in continuous cooled specimens were composed of pearlite, quasi-polygonal ferrite, granular bainite, acicular ferrite, bainitic ferrite, lower bainite, and martensite depending on cooling rate and transformation temperature. A rapid cooling rate depressed the formation of pearlite and quasi-polygonal ferrite, which resulted in higher hardness. However, hot deformation slightly increased transformation start temperature, and promoted the formation of pearlite and quasi-polygonal ferrite. Hot deformation also strongly promoted the acicular ferrite formation which did not form under non-deformation conditions. Small boron addition effectively reduced the formation of pearlite and quasi-polygonal ferrite and broadened the cooling rate region for bainitic ferrite and martensite.

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

Science.gov (United States)

Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

2015-12-01

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

A 7-13 GHz low-noise tuned optical front-end amplifier for heterodyne transmission system application

DEFF Research Database (Denmark)

Ebskamp, Frank; Schiellerup, Gert; Høgdal, Morten

1991-01-01

The authors present a 7-13 GHz low-noise bandpass tuned optical front-end amplifier, showing 46±1 dBΩ transimpedance, and a noise spectral density of about 12 pA/√Hz. This is the first time such a flat response and such low noise were obtained simultaneously at these frequencies, without any...

Critical Low-Noise Technologies Being Developed for Engine Noise Reduction Systems Subproject

Science.gov (United States)

Grady, Joseph E.; Civinskas, Kestutis C.

2004-01-01

NASA's previous Advanced Subsonic Technology (AST) Noise Reduction Program delivered the initial technologies for meeting a 10-year goal of a 10-dB reduction in total aircraft system noise. Technology Readiness Levels achieved for the engine-noise-reduction technologies ranged from 4 (rig scale) to 6 (engine demonstration). The current Quiet Aircraft Technology (QAT) project is building on those AST accomplishments to achieve the additional noise reduction needed to meet the Aerospace Technology Enterprise's 10-year goal, again validated through a combination of laboratory rig and engine demonstration tests. In order to meet the Aerospace Technology Enterprise goal for future aircraft of a 50- reduction in the perceived noise level, reductions of 4 dB are needed in both fan and jet noise. The primary objectives of the Engine Noise Reduction Systems (ENRS) subproject are, therefore, to develop technologies to reduce both fan and jet noise by 4 dB, to demonstrate these technologies in engine tests, and to develop and experimentally validate Computational Aero Acoustics (CAA) computer codes that will improve our ability to predict engine noise.

Evaluation of Low-Noise, Improved-Bearing-Contact Spiral Bevel Gears

National Research Council Canada - National Science Library

Lewicki, Davide

2003-01-01

.... Experimental tests were performed on the OH-58D helicopter main-rotor transmission in the NASA Glenn 500-hp Helicopter Transmission Test Stand Low-noise, improved-bearing- contact spiral-bevel gears...

Active noise cancellation of low frequency noise propagating in a duct

Directory of Open Access Journals (Sweden)

Farhad Forouharmajd

2012-01-01

Conclusions: With regard to the wide range of frequencies of different noise sources, having optimized circumstances in the duct, microphone location on the duct body or even the distance of the speakers may be important in signal processing, noise sampling and anti noise production.

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Science.gov (United States)

Dyakonova, N.; Karandashev, S. A.; Levinshtein, M. E.; Matveev, B. A.; Remennyi, M. A.

2018-06-01

We report the first experimental study of low-frequency noise in p-InAsSbP/n-InAs infrared photodiodes. For forward bias, experiments have been carried out at 300 and 77 K, in the photovoltaic regime the measurements have been done at 300 K. At room temperature the current noise spectral density, SI , exhibits the ∼1/f frequency dependence. For low currents, I ≤ I 0 ∼ 4 × 10‑5 A, S I is proportional to I 2, at higher currents this dependence changes to S I ∼ I. At 77 K the noise spectral density is significantly higher than at 300 K, and Lorentzian contributions to noise are observed. The current dependences of spectral noise density can be approximately described as S I ∼ I 1.5 and show particularities suggesting the contribution of defects.

Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si3N4 passivation

International Nuclear Information System (INIS)

Tomosh, K. N.; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P.

2016-01-01

The optimum mode of the in situ plasma-chemical etching of a Si 3 N 4 passivating layer in C 3 F 8 /O 2 medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si 3 N 4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si 3 N 4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si 3 N 4 than without it.

Enhanced terahertz detection using multiple GaAs HEMTs connected in series

KAUST Repository

Elkhatib, Tamer A.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xi-C.; Shur, Michael S.

2012-01-01

We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

Enhanced terahertz detection using multiple GaAs HEMTs connected in series

KAUST Repository

Elkhatib, Tamer A.

2012-07-28

We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

Low-frequency noise characterization of single CuO nanowire gas sensor devices

NARCIS (Netherlands)

Steinhauer, S.; Köck, A.; Gspan, C.; Grogger, W.; Vandamme, L.K.J.; Pogany, D.

2015-01-01

Low-frequency noise properties of single CuO nanowire devices were investigated under gas sensor operation conditions in dry and humid synthetic air at 350¿°C. A 1/f noise spectrum was found with the normalized power spectral density of current fluctuations typically a factor of 2 higher for humid

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

Directory of Open Access Journals (Sweden)

J. Sturm

2014-04-01

Full Text Available The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.

Band-gap tunable dielectric elastomer filter for low frequency noise

Science.gov (United States)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

Science.gov (United States)

Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

2016-12-01

InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

International Nuclear Information System (INIS)

Singh, Sarab Preet; Liu, Yi; Ngoo, Yi Jie; Kyaw, Lwin Min; Bera, Milan Kumar; Chor, Eng Fong; Dolmanan, S B; Tripathy, Sudhiranjan

2015-01-01

The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) passivation film thickness on In 0.18 Al 0.82 N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si 3 N 4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiN x film increase with increasing film thickness. With an increase in SiN x film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In 0.18 Al 0.82 /GaN/Si HEMTs are observed. An optimal thickness of SiN x is ∼100 nm and it yields a substantial increase in 2DEG density (∼30%) with a minimum sheet resistance for In 0.18 Al 0.82 N/GaN/Si heterostructures. Furthermore, we correlate the observed SiN x film thickness-dependent electrical characteristics of In 0.18 Al 0.82 /GaN/Si HEMTs with the density of the SiN x film. (paper)

Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

International Nuclear Information System (INIS)

Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

2013-01-01

This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

Science.gov (United States)

Ichino, Shinya; Mawaki, Takezo; Teramoto, Akinobu; Kuroda, Rihito; Park, Hyeonwoo; Wakashima, Shunichi; Goto, Tetsuya; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

Investigation and reduction of excess low-frequency noise in rf superconducting quantum interference devices

International Nuclear Information System (INIS)

Mueck, M.; Heiden, C.; Clarke, J.

1994-01-01

A detailed study has been made of the low-frequency excess noise of rf superconducting quantum interference devices (SQUIDs), fabricated from thin niobium films and operated at 4.2 K, with rf bias frequencies of 0.15, 1.7, and 3 GHz. When the SQUIDs were operated in an open-loop configuration in the absence of low-frequency flux modulation, the demodulated rf voltage exhibited a substantial level 1/f noise, which was essentially independent of the rf bias frequency. As the rf bias frequency was increased, the crossover frequency at which the 1/f noise power was equal to the white noise power moved to higher frequencies, because of the reduction in white noise. On the other hand, when the SQUID was flux modulated at 50 kHz and operated in a flux locked loop, no 1/f noise was observed at frequencies above 0.5 Hz. A detailed description of how the combination of rf bias and flux modulation removes 1/f noise due to critical current fluctuations is given. Thus, the results demonstrate that the 1/f noise observed in these SQUIDs is generated by critical current fluctuations, rather than by the hopping of flux vortices in the niobium films

Low-Gain, Low-Noise Integrated Neuronal Amplifier for Implantable Artifact-Reduction Recording System

Directory of Open Access Journals (Sweden)

Abdelhamid Benazzouz

2013-09-01

Full Text Available Brain neuroprostheses for neuromodulation are being designed to monitor the neural activity of the brain in the vicinity of the region being stimulated using a single macro-electrode. Using a single macro-electrode, recent neuromodulation studies show that recording systems with a low gain neuronal amplifier and successive amplifier stages can reduce or reject stimulation artifacts. These systems were made with off-the-shelf components that are not amendable for future implant design. A low-gain, low-noise integrated neuronal amplifier (NA with the capability of recording local field potentials (LFP and spike activity is presented. In vitro and in vivo characterizations of the tissue/electrode interface, with equivalent impedance as an electrical model for recording in the LFP band using macro-electrodes for rodents, contribute to the NA design constraints. The NA occupies 0.15 mm2 and dissipates 6.73 µW, and was fabricated using a 0.35 µm CMOS process. Test-bench validation indicates that the NA provides a mid-band gain of 20 dB and achieves a low input-referred noise of 4 µVRMS. Ability of the NA to perform spike recording in test-bench experiments is presented. Additionally, an awake and freely moving rodent setup was used to illustrate the integrated NA ability to record LFPs, paving the pathway for future implantable systems for neuromodulation.

A low noise charge sensitive amplifier for use in vacuum photo diode readout

International Nuclear Information System (INIS)

Stephenson, R.

1982-08-01

The amplifier described consists of a charge sensitive pre-amplifier optimised for low noise with low values of input shunt capacitance, and a shaping amplifier providing both differentiation and integration. Amplifier gain is adjustable up to a maximum of approximately 100 μV/electron with a rise time of 2 μS to the peak of the output voltage, and with an open circuit input noise level of 150 electrons RMS. (author)

On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

2016-01-01

The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

International Nuclear Information System (INIS)

Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

1990-01-01

The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

Op-amp based low noise amplifier for magnetic particle spectroscopy

Directory of Open Access Journals (Sweden)

Malhotra Ankit

2017-09-01

Full Text Available Magnetic particle spectrometry (MPS is a novel technique used to measure the magnetization response of superparamagnetic iron oxide nanoparticles (SPIONs. Therefore, it is one of the most important tools for the characterization of the SPIONs for imaging modalities such as magnetic particle imaging (MPI and Magnetic Resonance Imaging (MRI. In MPS, change in the particle magnetization induces a voltage in a dedicated receive coil. The amplitude of the signal can be very low (ranging from a few nV to 100 μV depending upon the concentration of the nanoparticles. Hence, the received signal needs to be amplified with a low noise amplifier (LNA. LNA’s paramount task is to amplify the received signal while keeping the noise induced by its own circuitry minimum. In the current research, we purpose modeling, design, and development of a prototyped LNA for MPS. The designed prototype LNA is based on the parallelization technique of Op-amps. The prototyped LNA consists of 16 Op-amps in parallel and is manufactured on a printed circuit board (PCB, with a size of 110.38 mm × 59.46 mm and 234 components. The input noise of the amplifier is approx. 546 pV/√Hz with a noise figure (NF of approx. 1.4 dB with a receive coil termination. Furthermore, a comparison between the prototyped LNA and a commercially available amplifier is shown.

Noise Source Visualization Using a Digital Voice Recorder and Low-Cost Sensors.

Science.gov (United States)

Cho, Yong Thung

2018-04-03

Accurate sound visualization of noise sources is required for optimal noise control. Typically, noise measurement systems require microphones, an analog-digital converter, cables, a data acquisition system, etc., which may not be affordable for potential users. Also, many such systems are not highly portable and may not be convenient for travel. Handheld personal electronic devices such as smartphones and digital voice recorders with relatively lower costs and higher performance have become widely available recently. Even though such devices are highly portable, directly implementing them for noise measurement may lead to erroneous results since such equipment was originally designed for voice recording. In this study, external microphones were connected to a digital voice recorder to conduct measurements and the input received was processed for noise visualization. In this way, a low cost, compact sound visualization system was designed and introduced to visualize two actual noise sources for verification with different characteristics: an enclosed loud speaker and a small air compressor. Reasonable accuracy of noise visualization for these two sources was shown over a relatively wide frequency range. This very affordable and compact sound visualization system can be used for many actual noise visualization applications in addition to educational purposes.

Measurement of the Low Frequency Noise of MOSFETs under Large Signal RF Excitation

NARCIS (Netherlands)

van der Wel, A.P.; Klumperink, Eric A.M.; Nauta, Bram

2002-01-01

A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise under large signal RF (Radio Frequency) excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does

Detection of AE signals from a HTS tape during quenching in a solid cryogen-cooling system

International Nuclear Information System (INIS)

Kim, K.J.; Song, J.B.; Kim, J.H.; Lee, J.H.; Kim, H.M.; Kim, W.S.; Na, J.B.; Ko, T.K.; Lee, H.G.

2010-01-01

The acoustic emission (AE) technique is suitable for detecting the presence of thermal and mechanical stress in superconductors, which have adverse effects on the stability of their application systems. However, the detection of AE signals from a HTS tape in a bath of liquid cryogen (such as liquid nitrogen, LN 2 ) has not been reported because of its low signal to noise ratio due to the noise from the boiling liquid cryogen. In order to obtain the AE signals from the HTS tapes during quenching, this study carried out repetitive quench tests for YBCO coated conductor (CC) tapes in a cooling system using solid nitrogen (SN 2 ). This paper examined the performance of the AE sensor in terms of the amplitudes of the AE signals in the SN 2 cooling system.

Speech Denoising in White Noise Based on Signal Subspace Low-rank Plus Sparse Decomposition

Directory of Open Access Journals (Sweden)

yuan Shuai

2017-01-01

Full Text Available In this paper, a new subspace speech enhancement method using low-rank and sparse decomposition is presented. In the proposed method, we firstly structure the corrupted data as a Toeplitz matrix and estimate its effective rank for the underlying human speech signal. Then the low-rank and sparse decomposition is performed with the guidance of speech rank value to remove the noise. Extensive experiments have been carried out in white Gaussian noise condition, and experimental results show the proposed method performs better than conventional speech enhancement methods, in terms of yielding less residual noise and lower speech distortion.

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

International Nuclear Information System (INIS)

Fang, J. Y.; Hsu, C. P.; Kang, Y. W.; Fang, K. C.; Kao, W. L.; Yao, D. J.; Chen, C. C.; Li, S. S.; Yeh, J. A.; Wang, Y. L.; Lee, G. Y.; Chyi, J. I.; Hsu, C. H.; Huang, Y. F.; Ren, F.

2013-01-01

The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity

Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

Science.gov (United States)

Saravana Kumar, R.; Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.

2018-03-01

The paper reports on the influence of a barrier thickness and gate length on the various device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC and RF performance of the device have been studied by varying the barrier thickness from 1 to 5 nm and gate length from 10 to 150 nm, respectively. As the gate length is reduced below 50 nm regime, the barrier thickness plays an important role in device performance. Scaling the gate length leads to higher transconductance and high frequency operations with the expense of poor short channel effects. The authors claim that the 30-nm gate length, mole fractions tuned In0.53Ga0.47As/In0.7Ga0.3As/In0.53Ga0.47As subchannel DG-HEMT with optimised device structure of 2 nm In0.48Al0.52As barrier layer show a peak gm of 3.09 mS/µm, VT of 0.29 V, ION/IOFF ratio of 2.24 × 105, subthreshold slope 73 mV/decade and drain induced barrier lowering 68 mV/V with fT and fmax of 776 and 905 GHz at Vds = 0.5 V is achieved. These superior performances are achieved by using double-gate architecture with reduced gate to channel distance.

Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

Science.gov (United States)

Wong, Hei; Iwai, Hiroshi; Liou, J. J.

2005-05-01

It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

Subjective evaluation of noise from neighbours with focus on low frequencies

DEFF Research Database (Denmark)

Mortensen, Frank Rysgaard

1999-01-01

There is a growing tendency to use lightweight constructions in the building industry. One unwanted side effect of this tendency is poor sound insulation at low frequencies. The purpose of this investigation has been to examine the subjective effects of the resulting increase of low frequency noise...

Ultra low-noise differential ac-coupled photodetector for sensitive pulse detection applications

International Nuclear Information System (INIS)

Windpassinger, Patrick J; Boisen, Axel; Kjærgaard, Niels; Polzik, Eugene S; Müller, Jörg Helge; Kubasik, Marcin; Koschorreck, Marco

2009-01-01

We report on the performance of ultra low-noise differential photodetectors especially designed for probing of atomic ensembles with weak light pulses. The working principle of the detectors is described together with the analysis procedures employed to extract the photon shot noise of light pulses with ∼1 μs duration. As opposed to frequency response peaked detectors, our approach allows for broadband quantum noise measurements. The equivalent noise charge (ENC) for two different hardware approaches is evaluated to 280 and 340 electrons per pulse, respectively, which corresponds to a dark noise equivalent photon number of n 3dB = 0.8 × 10 5 and n 3dB = 1.2 × 10 5 in the two approaches. Finally, we discuss the possibility of removing classical correlations in the output signal caused by detector imperfection by using double-correlated sampling methods

A single-to-differential low-noise amplifier with low differential output imbalance

International Nuclear Information System (INIS)

Duan Lian; Ma Chengyan; He Xiaofeng; Ye Tianchun; Huang Wei; Jin Yuhua

2012-01-01

This paper presents a single-ended input differential output low-noise amplifier intended for GPS applications. We propose a method to reduce the gain/amplitude and phase imbalance of a differential output exploiting the inductive coupling of a transformer or center-tapped differential inductor. A detailed analysis of the theory of imbalance reduction, as well as a discussion on the principle of choosing the dimensions of a transformer, are given. An LNA has been implemented using TSMC 0.18 μm technology with ESD-protected. Measurement on board shows a voltage gain of 24.6 dB at 1.575 GHz and a noise figure of 3.2 dB. The gain imbalance is below 0.2 dB and phase imbalance is less than 2 degrees. The LNA consumes 5.2 mA from a 1.8 V supply. (semiconductor integrated circuits)

2-GHz band man-made noise evaluation for cryogenic receiver front-end

Energy Technology Data Exchange (ETDEWEB)

Narahashi, S; Satoh, K; Suzuki, Y [Research Laboratories, NTT DoCoMo, Inc., 3-5 Hikari-no-oka, Yokosuka, Kanagawa 239-8536 (Japan); Mimura, T [Intellectual Property Department, NTT DoCoMo, Inc., 2-11-1 Nagatacho, Chiyoda, Tokyo 100-6150 (Japan); Nojima, T [Graduate School of Information Science and Technology, Hokkaido University, Nishi 9, Kita 14, Kita, Sapporo 060-0808 (Japan)], E-mail: narahashi@nttdocomo.co.jp

2008-02-01

This paper presents measured results of man-made noise in urban and suburban areas in the 2-GHz band with amplitude probability distribution (APD) in order to evaluate the impact of man-made noise on an experimental cryogenic receiver front-end (CRFE). The CRFE comprises a high-temperature superconducting filter, cryogenically-cooled low-noise amplifier, and highly reliable cryostat that is very compact. The CRFE is anticipated to be an effective way to achieve efficient frequency utilization and to improve the sensitivity of mobile base station receivers. It is important to measure the characteristics of the man-made noise in typical cellular base station antenna environments and confirm their impact on the CRFE reception with APD because if man-made noise has a stronger effect than thermal noise, the CRFE would fail to offer any improvement in sensitivity. The measured results suggest that the contribution of man-made noise in the 2-GHz band can be ignored as far as the wideband code division multiple access (W-CDMA) system is concerned.

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Science.gov (United States)

Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

2017-04-01

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

Device for recirculation cooling of cooling water by natural or forced chaft

Energy Technology Data Exchange (ETDEWEB)

Ruehl, H; Honekamp, H; Katzmann, A

1975-10-23

The invention is concerned with a device for recirculation cooling of cooling water by natural or forced draft. Through a cascading system mounted on supporting columns at a vertical distance to ground level, cooling air is flowing in cross- or counterflow to the cooling water freely falling from the cascading system. The cooling water collecting zone below the cascading system has an absorption floor arranged nearly horizontal and/or inclined, with a cam-type profile on its upperside, which is bounded on its circumference by at least one cooling water release channel provided below its level and/or which is divided in the sense of a surface subdivision. By these means, a reduction of the amount of material required for the supporting columns and an increase of the stability of the columns is to be achieved. Furthermore, the deposition of mud is to be avoided as for as possible, and noise generation during operation is to be reduced considerably. For this purpose, the absorption floor may be made of material sound insulating and/or may be coated with such a material.

Mechanical effects of strong measurement: back-action noise and cooling

Science.gov (United States)

Schwab, Keith

2007-03-01

Our recent experiments show that it is now possible to prepare and measure mechanical systems with thermal occupation factors of N˜25 and perform continuous position measurements close to the limits required by the Heisenberg Uncertainty Principle (1). I will discuss our back-action measurements with nanomechanical structures strongly coupled to single electron transistors. We have been able to observe the stochastic back-action forces exerted by the SET as well as a cooling effect which has analogies to cooling in optical cavities. Furthermore, I will discuss progress using optical fields coupled to mechanical modes which show substantial cooling using the pondermotive effects of the photons impacting a flexible dielectric mirror (2). Both of these techniques pave the way to demonstrating the true quantum properties of a mechanical device: squeezed states, superposition states, and entangled states. (1) ``Quantum Measurement Backaction and Cooling Observed with a Nanomechanical Resonator,'' A. Naik, O. Buu, M.D. LaHaye, M.P. Blencowe, A.D. Armour, A.A. Clerk, K.C. Schwab, Nature 443, 193 (2006). (2) ``Self-cooling of a micro-mirror by radiation pressure,'' S. Gigan, H.R. Boehm, M. Patemostro, F. Blaser, G. Langer, J. Hertzberg, K. Schwab, D. Baeuerle, M. Aspelmeyer, A. Zeilinger, Nature 444, 67 (2006).

Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

Energy Technology Data Exchange (ETDEWEB)

Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

2014-08-15

The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

Health-based audible noise guidelines account for infrasound and low-frequency noise produced by wind turbines.

Science.gov (United States)

Berger, Robert G; Ashtiani, Payam; Ollson, Christopher A; Whitfield Aslund, Melissa; McCallum, Lindsay C; Leventhall, Geoff; Knopper, Loren D

2015-01-01

Setbacks for wind turbines have been established in many jurisdictions to address potential health concerns associated with audible noise. However, in recent years, it has been suggested that infrasound (IS) and low-frequency noise (LFN) could be responsible for the onset of adverse health effects self-reported by some individuals living in proximity to wind turbines, even when audible noise limits are met. The purpose of this paper was to investigate whether current audible noise-based guidelines for wind turbines account for the protection of human health, given the levels of IS and LFN typically produced by wind turbines. New field measurements of indoor IS and outdoor LFN at locations between 400 and 900 m from the nearest turbine, which were previously underrepresented in the scientific literature, are reported and put into context with existing published works. Our analysis showed that indoor IS levels were below auditory threshold levels while LFN levels at distances >500 m were similar to background LFN levels. A clear contribution to LFN due to wind turbine operation (i.e., measured with turbines on in comparison to with turbines off) was noted at a distance of 480 m. However, this corresponded to an increase in overall audible sound measures as reported in dB(A), supporting the hypothesis that controlling audible sound produced by normally operating wind turbines will also control for LFN. Overall, the available data from this and other studies suggest that health-based audible noise wind turbine siting guidelines provide an effective means to evaluate, monitor, and protect potential receptors from audible noise as well as IS and LFN.

Health-Based Audible Noise Guidelines Account for Infrasound and Low-Frequency Noise Produced by Wind Turbines

Science.gov (United States)

Berger, Robert G.; Ashtiani, Payam; Ollson, Christopher A.; Whitfield Aslund, Melissa; McCallum, Lindsay C.; Leventhall, Geoff; Knopper, Loren D.

2015-01-01

Setbacks for wind turbines have been established in many jurisdictions to address potential health concerns associated with audible noise. However, in recent years, it has been suggested that infrasound (IS) and low-frequency noise (LFN) could be responsible for the onset of adverse health effects self-reported by some individuals living in proximity to wind turbines, even when audible noise limits are met. The purpose of this paper was to investigate whether current audible noise-based guidelines for wind turbines account for the protection of human health, given the levels of IS and LFN typically produced by wind turbines. New field measurements of indoor IS and outdoor LFN at locations between 400 and 900 m from the nearest turbine, which were previously underrepresented in the scientific literature, are reported and put into context with existing published works. Our analysis showed that indoor IS levels were below auditory threshold levels while LFN levels at distances >500 m were similar to background LFN levels. A clear contribution to LFN due to wind turbine operation (i.e., measured with turbines on in comparison to with turbines off) was noted at a distance of 480 m. However, this corresponded to an increase in overall audible sound measures as reported in dB(A), supporting the hypothesis that controlling audible sound produced by normally operating wind turbines will also control for LFN. Overall, the available data from this and other studies suggest that health-based audible noise wind turbine siting guidelines provide an effective means to evaluate, monitor, and protect potential receptors from audible noise as well as IS and LFN. PMID:25759808

Low-noise magnetic observatory variometer with race-track sensors

International Nuclear Information System (INIS)

Janošek, M; Petrucha, V; Vlk, M

2016-01-01

We present a low-noise, high-stability observatory magnetometer with race-track sensors, as developed by the Czech Technical University in Prague for National Observatory of Athens. As opposed to the standard instruments, we used our novel race-track fluxgate sensors with planar oval core which were cut by state-of-the art pico-second UV-laser. The noise performance of the complete electronics and sensor chain is below 6 pT/√Hz @ 1 Hz. The electronics uses 24-bit 200-Hz A/D converter with simultaneous sampling and all digital processing is done in FPGA. The variometer with the sensors mounted on a MACOR cube has been successfully calibrated by scalar method. (paper)

Research on noise and vibration reduction at DB to improve the environmental friendliness of railway traffic

Science.gov (United States)

Schulte-Werning, B.; Beier, M.; Degen, K. G.; Stiebel, D.

2006-06-01

One of the most prominent keywords relating to the environmental friendliness of railway traffic is noise reduction. Thus, the research and development programme "Low Noise Railway" of Deutsche Bahn (DB) is under way to treat the noise of the vehicles and infrastructure. The noise reduction of the trains and the rail/wheel system are being tackled within several projects. The direct noise experienced by railway-lineside residents due to train movements on the track can be reduced by minimising the sound radiation directly at the source. This is the first-choice solution, as it proves to be the most effective countermeasure regarding a cost-benefit relation. The limit values for the noise emission as specified in the technical specification for interoperability are an essential criterion to be confirmed during the procurement process of railway vehicles. A recently developed acoustical quality management scheme establishes systematic noise management to complete the vehicle procurement process in the phases of concept, design, construction and manufacturing. In freight traffic quiet railway wheels for block brake operation will play an important role in the future to meet the goal of a low-noise railway system. A first attempt to realise successfully the low-noise potential of such optimised wheels was performed, even if with mixed results. To show ways of reducing the noise of the cooling ventilation in locomotives, DB is a partner in a development project led by Siemens. A notable 8 dB(A) noise reduction was measured. Concerning bridge noise, a project was started based on an effective and cost-efficient combination of experiments and simulations in order to develop specifications for the construction of generic low-noise bridges.

Low frequency noise as a control test for spacial solar panels

Science.gov (United States)

Orsal, B.; Alabedra, R.; Ruas, R.

1986-07-01

The present study of low frequency noise in a forward-biased dark solar cell, in order to develop an NDE test method for solar panels, notes that a single cell with a given defect is thus detectable under dark conditions. The test subject was a space solar panel consisting of five cells in parallel and five in series; these cells are of the n(+)-p monocrystalline Si junction type. It is demonstrated that the noise associated with the defective cell is 10-15 times higher than that of a good cell. Replacement of a good cell by a defective one leads to a 30-percent increase in the noise level of the panel as a whole.

Design and validation of the high performance and low noise CQU-DTU-LN1 airfoils

DEFF Research Database (Denmark)

Cheng, Jiangtao; Zhu, Wei Jun; Fischer, Andreas

2014-01-01

with the blade element momentum theory, the viscous-inviscid XFOIL code and an airfoil self-noise prediction model, an optimization algorithm has been developed for designing the high performance and low noise CQU-DTU-LN1 series of airfoils with targets of maximum power coefficient and low noise emission...... emission between the CQU-DTU-LN118 airfoil and the National Advisory Committee for Aeronautics (NACA) 64618 airfoil, which is used in modern wind turbine blades, are carried out. Copyright © 2013 John Wiley & Sons, Ltd....

Low frequency noise and air vibration generated by a simple cycle gas turbine installation

Energy Technology Data Exchange (ETDEWEB)

Giesbrecht, C.; Hertil, S. [ATCO Noise Management, Calgary, AB (Canada)

2005-07-01

Low-frequency noise refers to infrasound whose frequency is lower than the minimum human audible frequency of about 20 Hz. Recently, there have been serious complaints on noise pollution in the frequency range of 1-100 Hz. This presentation outlined ASHRAE noise criteria regions and discussed human perceptions to vibration. It also presented methods that ATCO used for measuring noise at a simple gas turbine installation, inside the site at the administration buildings, at the paths of vibration and noise propagation, and at noise sensitive receptors. A 70 dBC at the closes noise-sensitive receptor was used as a noise limit to minimize annoyance. In addition, 96 dBC was measured at 400 feet. It was noted that reducing the C-weighted sound level depends on reducing the stack noise emissions in the 16 and 31.5 band levels. ATCO evaluated silencer designs and recommended reactive silencers to achieve a 10 dB reduction in noise emitted by the 3 exhaust stacks. 6 figs.

A low noise preamplifier with optoelectronic overload protection for radioactivity measurement

International Nuclear Information System (INIS)

Sephton, J.P.; Williams, J.M.; Johansson, L.C.; Philips, H.C.

2012-01-01

Pulses from detectors used for radioactivity measurement can vary in size by several orders of magnitude. Large pulses will lead to saturation at the preamplifier output and extension of the pulse length. As a consequence, the dead time of the system increases and pulses may be lost. Electronic design techniques employed to protect against overloading tend to increase the amplifier noise level. However, an optoelectronic method of overload protection has been devised which has only a negligible effect on noise. An infrared light emitting diode interfaced to the output of the preamplifier is linked by fibre optic cable to an ultra-low leakage photodiode at the input. The conduction of the photodiode increases with the amplitude of the preamplifier output signal. Excess current is thereby prevented from entering the preamplifier and causing saturation. The preamplifier has been tested on 4π beta–gamma and gas counting systems and found to give good protection against overloading. - Highlights: ► A preamplifier for radioactivity measurements has been developed. ► Low noise. ► Current sensitive. ► Optoelectronic overload protection.

Continuous cooling transformations and microstructures in a low-carbon, high-strength low-alloy plate steel

Science.gov (United States)

Thompson, S. W.; Vin, D. J., Col; Krauss, G.

1990-06-01

A continuous-cooling-transformation (CCT) diagram was determined for a high-strength low-alloy plate steel containing (in weight percent) 0.06 C, 1.45 Mn, 1.25 Cu, 0.97 Ni, 0.72 Cr, and 0.42 Mo. Dilatometric measurements were supplemented by microhardness testing, light microscopy, and transmission electron microscopy. The CCT diagram showed significant suppression of polygonal ferrite formation and a prominent transformation region, normally attributed to bainite formation, at temperatures intermediate to those of polygonal ferrite and martensite formation. In the intermediate region, ferrite formation in groups of similarly oriented crystals about 1 μm in size and containing a high density of dislocations dominated the transformation of austenite during continuous cooling. The ferrite grains assumed two morphologies, elongated or acicular and equiaxed or granular, leading to the terms “acicular ferrite” and “granular ferrite,” respectively, to describe these structures. Austenite regions, some transformed to martensite, were enriched in carbon and retained at interfaces between ferrite grains. Coarse interfacial ledges and the nonacicular morphology of the granular ferrite grains provided evidence for a phase transformation mechanism involving reconstructive diffusion of substitutional atoms. At slow cooling rates, polygonal ferrite and Widmanstätten ferrite formed. These latter structures contained low dislocation densities and e-copper precipitates formed by an interphase transformation mechanism.

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Decoherence of coupled Josephson charge qubits due to partially correlated low-frequency noise

International Nuclear Information System (INIS)

Hu, Yong; Zhou, Zheng-Wei; Cai, Jian-Ming; Guo, Guang-Can

2007-01-01

Josephson charge qubits are promising candidates for scalable quantum computing. However, their performances are strongly degraded by decoherence due to low-frequency background noise, typically with a 1/f spectrum. In this paper, we investigate the decoherence process of two Cooper pair boxes (CPBs) coupled via a capacitor. Going beyond the common and uncorrelated noise models and the Bloch-Redfield formalism of previous works, we study the coupled system's quadratic dephasing under the condition of partially correlated noise sources. Based on reported experiments and generally accepted noise mechanisms, we introduce a reasonable assumption for the noise correlation, with which the calculation of multiqubit decoherence can be simplified to a problem on the single-qubit level. For the conventional Gaussian 1/f noise case, our results demonstrate that the quadratic dephasing rates are not very sensitive to the spatial correlation of the noises. Furthermore, we discuss the feasibility and efficiency of dynamical decoupling in the coupled CPBs

Noise Source Visualization Using a Digital Voice Recorder and Low-Cost Sensors

Directory of Open Access Journals (Sweden)

Yong Thung Cho

2018-04-01

Full Text Available Accurate sound visualization of noise sources is required for optimal noise control. Typically, noise measurement systems require microphones, an analog-digital converter, cables, a data acquisition system, etc., which may not be affordable for potential users. Also, many such systems are not highly portable and may not be convenient for travel. Handheld personal electronic devices such as smartphones and digital voice recorders with relatively lower costs and higher performance have become widely available recently. Even though such devices are highly portable, directly implementing them for noise measurement may lead to erroneous results since such equipment was originally designed for voice recording. In this study, external microphones were connected to a digital voice recorder to conduct measurements and the input received was processed for noise visualization. In this way, a low cost, compact sound visualization system was designed and introduced to visualize two actual noise sources for verification with different characteristics: an enclosed loud speaker and a small air compressor. Reasonable accuracy of noise visualization for these two sources was shown over a relatively wide frequency range. This very affordable and compact sound visualization system can be used for many actual noise visualization applications in addition to educational purposes.

dc SQUID electronics based on adaptive noise cancellation and a high open-loop gain controller

International Nuclear Information System (INIS)

Seppae, H.

1992-01-01

A low-noise SQUID readout electronics with a high slew rate and an automatic gain control feature has been developed. Flux noise levels of 5x10 -7 Φ 0 /√Hz at 1 kHz and 2x10 -6 Φ 0 /√Hz at 1 Hz have been measured with this readout scheme. The system tolerates sinusoidal disturbances having amplitudes up to 140 Φ 0 at 1 kHz without loosing lock. The electronics utilizes a cooled GaAs FET to control the cancellation of the voltage noise of the room temperature amplifier, a PI 3/2 controller to provide a high open-loop gain at low frequencies, and a square-wave flux and offset voltage modulation to enable automatic control of the noise reduction. The cutoff frequency of the flux-locked-loop is 300 kHz and the feedback gain is more than 130 dB at 10 Hz. (orig.)

Design study of a low-power, low-noise front-end for multianode silicon drift detectors

International Nuclear Information System (INIS)

Caponetto, L.; Presti, D. Lo; Randazzo, N.; Russo, G.V.; Leonora, E.; Lo Nigro, L.; Petta, C.; Reito, S.; Sipala, V.

2005-01-01

The read-out for Silicon Drift Detectors in the form of a VLSI chip is presented, with a view to applications in High Energy Physics and space experiments. It is characterised by extremely low power dissipation, small noise and size

Performance of a fast low noise front-end preamplifier for the MAGIC imaging Cherenkov telescope

International Nuclear Information System (INIS)

Blanch, O.; Blanchot, G.; Bosman, M.

1999-01-01

The observation of high energy cosmic gamma rays with an energy threshold of 15 GeV using the proposed MAGIC ground based air imaging Cherenkov telescope requires the development of new low noise fast preamplifiers for the camera photosensors. The speed and noise performance of a transimpedance preamplifier that resolves the multi photoelectron peaks from a hybrid photomultiplier with a peaking time below 7 ns is presented. The new front-end circuit is designed with RF low noise bipolar transistors and provides fast output pulses that allow for fast trigger settings

Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

Feedback damping of a microcantilever at room temperature to the minimum vibration amplitude limited by the noise level.

Science.gov (United States)

Kawamura, Y; Kanegae, R

2016-06-17

Cooling the vibration amplitude of a microcantilever as low as possible is important to improve the sensitivity and resolutions of various types of scanning type microscopes and sensors making use of it. When the vibration amplitude is controlled to be smaller using a feed back control system, it is known that the obtainable minimum amplitude of the vibration is limited by the floor noise level of the detection system. In this study, we demonstrated that the amplitude of the thermal vibration of a microcantilever was suppressed to be about 0.15 pmHz(-1/2), which is the same value with the floor noise level, without the assistance of external cryogenic cooling. We think that one of the reason why we could reach the smaller amplitude at room temperature is due to stiffer spring constant of the lever, which leads to higher natural frequency and consequently lower floor noise level. The other reason is considered to be due to the increase in the laser power for the diagnostics, which lead to the decrease in the signal to noise ratio determined by the optical shot noise.

Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

Science.gov (United States)

Majumdar, Shubhankar; Das, S.; Biswas, D.

2015-08-01

Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

A multiscale filter for noise reduction of low-dose cone beam projections.

Science.gov (United States)

Yao, Weiguang; Farr, Jonathan B

2015-08-21

The Poisson or compound Poisson process governs the randomness of photon fluence in cone beam computed tomography (CBCT) imaging systems. The probability density function depends on the mean (noiseless) of the fluence at a certain detector. This dependence indicates the natural requirement of multiscale filters to smooth noise while preserving structures of the imaged object on the low-dose cone beam projection. In this work, we used a Gaussian filter, exp(-x2/2σ(2)(f)) as the multiscale filter to de-noise the low-dose cone beam projections. We analytically obtained the expression of σ(f), which represents the scale of the filter, by minimizing local noise-to-signal ratio. We analytically derived the variance of residual noise from the Poisson or compound Poisson processes after Gaussian filtering. From the derived analytical form of the variance of residual noise, optimal σ(2)(f)) is proved to be proportional to the noiseless fluence and modulated by local structure strength expressed as the linear fitting error of the structure. A strategy was used to obtain the reliable linear fitting error: smoothing the projection along the longitudinal direction to calculate the linear fitting error along the lateral direction and vice versa. The performance of our multiscale filter was examined on low-dose cone beam projections of a Catphan phantom and a head-and-neck patient. After performing the filter on the Catphan phantom projections scanned with pulse time 4 ms, the number of visible line pairs was similar to that scanned with 16 ms, and the contrast-to-noise ratio of the inserts was higher than that scanned with 16 ms about 64% in average. For the simulated head-and-neck patient projections with pulse time 4 ms, the visibility of soft tissue structures in the patient was comparable to that scanned with 20 ms. The image processing took less than 0.5 s per projection with 1024   ×   768 pixels.

Algan/Gan Hemt By Magnetron Sputtering System

Science.gov (United States)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

Directory of Open Access Journals (Sweden)

S. Taking

2011-01-01

Full Text Available Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1 Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2 mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

Investigation of In0.7Ga0.3As/In0.7Al0.3As metamorphic HEMT- heterostructures by photoluminescence spectroscopy

International Nuclear Information System (INIS)

LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Romanovskiy, D S; LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Tarasov, S A; Galiev, G B; Pushkarev, S S

2014-01-01

Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT- (MHEMT-) heterostructures with the same active regions and different buffer layer designs grown by solid-source molecular beam epitaxy. The indium mole fraction in InAlAs/InGaAs/InAlAs single quantum well (QW) is 0.7. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence and photoreflectance spectral lines and their thermal behaviour are critically discussed

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

Science.gov (United States)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

Low-frequency noise suppression of a fiber laser based on a round-trip EDFA power stabilizer

International Nuclear Information System (INIS)

Pan, Z Q; Zhou, J; Yang, F; Ye, Q; Cai, H W; Qu, R H; Fang, Z J

2013-01-01

We have designed a power stabilizer based on a round-trip erbium-doped fiber amplifier (EDFA) structure to suppress the low-frequency relative intensity noise (RIN) for a narrow linewidth fiber laser. The noise suppressor is analyzed theoretically and its feasibility is verified experimentally. For a short-cavity single-frequency fiber laser with this device, about 20 dB low-frequency RIN improvement is achieved (down to −120 dB Hz −1 at 10 Hz). The corresponding frequency noise is also reduced by a factor of 1.6. The proposed method is an effective solution to achieve a low-frequency low RIN laser source for highly coherent detection applications. (paper)

CT urography in the urinary bladder: To compare excretory phase images using a low noise index and a high noise index with adaptive noise reduction filter

International Nuclear Information System (INIS)

Takeyama, Nobuyuki; Hayashi, Takaki; Ohgiya, Yoshimitsu

2011-01-01

Background: Although CT urography (CTU) is widely used for the evaluation of the entire urinary tract, the most important drawback is the radiation exposure. Purpose: To evaluate the effect of a noise reduction filter (NRF) using a phantom and to quantitatively and qualitatively compare excretory phase (EP) images using a low noise index (NI) with those using a high NI and postprocessing NRF (pNRF). Material and Methods: Each NI value was defined for a slice thickness of 5 mm, and reconstructed images with a slice thickness of 1.25 mm were assessed. Sixty patients who were at high risk of developing bladder tumors (BT) were divided into two groups according to whether their EP images were obtained using an NI of 9.88 (29 patients; group A) or an NI of 20 and pNRF (31 patients; group B). The CT dose index volume (CTDI vol ) and the contrast-to-noise ratio (CNR) of the bladder with respect to the anterior pelvic fat were compared in both groups. Qualitative assessment of the urinary bladder for image noise, sharpness, streak artifacts, homogeneity, and the conspicuity of polypoid or sessile-shaped BTs with a short-axis diameter greater than 10 mm was performed using a 3-point scale. Results: The phantom study showed noise reduction of approximately 40% and 76% dose reduction between group A and group B. CTDI vol demonstrated a 73% reduction in group B (4.6 ± 1.1 mGy) compared with group A (16.9 ± 3.4 mGy). The CNR value was not significantly different (P = 0.60) between group A (16.1 ± 5.1) and group B (16.6 ± 7.6). Although group A was superior (P < 0.01) to group B with regard to image noise, other qualitative analyses did not show significant differences. Conclusion: EP images using a high NI and pNRF were quantitatively and qualitatively comparable to those using a low NI, except with regard to image noise

Low noise electronics for experiments at LHC