High pressure annealing of Europium implanted GaN

KAUST Repository

Lorenz, K.

2012-02-09

GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Science.gov (United States)

Johnson, E. S.; Compton, W. D.

1971-01-01

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Strain of laser annealed silicon surfaces

Science.gov (United States)

Nemanich, R. J.; Haneman, D.

1982-05-01

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

Annealing temperature effect on self-assembled Au droplets on Si (111).

Science.gov (United States)

Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

2013-12-13

We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

Nitrogen annealing of zirconium or titanium metals and their alloys

International Nuclear Information System (INIS)

Eucken, C.M.

1982-01-01

A method is described of continuously nitrogen annealing zirconium and titanium metals and their alloys at temperatures at from 525 0 to 875 0 C for from 1/2 minute to 15 minutes. The examples include the annealing of Zircaloy-4. (U.K.)

Study of photoluminescence from annealed bulk-ZnO single crystals

Energy Technology Data Exchange (ETDEWEB)

Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

2006-03-15

We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Texture evolution in Fe-3% Si steel treated under unconventional annealing conditions

International Nuclear Information System (INIS)

Stoyka, Vladimir; Kovac, Frantisek; Stupakov, Oleksandr; Petryshynets, Ivan

2010-01-01

The present work investigates texture evolution stages in grain-oriented steel heat-treated using unconventional conditions. The Fe-3%Si steel taken after final cold rolling reduction from an industrial line was subjected to a laboratory isothermal annealing at different temperatures. The annealing temperatures were varied in a range of 850-1150 deg. C. During the annealing each specimen was heated at 10 deg. C/s and kept at the stated temperature for 5 min. Development of microstructure and texture in the annealed specimens were followed by the DC measurements of magnetic properties. The grain oriented steel, taken from the same industrial line after final box annealing was also analyzed and compared with the laboratory annealed specimens. It was shown that there is an optimal temperature region that, with combination of a fast heating rate, led to the best conditions of a drastically reduced development time of the {110} crystallographic texture in the cold rolled grain-oriented steel. Materials heat treated below the optimum temperature region account for a primary recrystallization, while applying heat above this region leads to a secondary recrystallization without abnormal grain growth. Moreover, in the optimum temperature range, there was a particular temperature leading to the most optimal microstructure and texture. The magnetic properties, measured after the optimal heat treatment, were close to that measured on specimens taken after the final box annealing. The electron back scattered diffraction measurement technique revealed that sharpness of the {110} crystallographic texture, developed at the optimum temperature is comparable to the steel taken after the industrial final box annealing. This fact is evidence that there is a temperature where the abnormal grain growth proceeds optimally.

Harnessing Thin-Film Continuous-Flow Assembly Lines.

Science.gov (United States)

Britton, Joshua; Castle, Jared W; Weiss, Gregory A; Raston, Colin L

2016-07-25

Inspired by nature's ability to construct complex molecules through sequential synthetic transformations, an assembly line synthesis of α-aminophosphonates has been developed. In this approach, simple starting materials are continuously fed through a thin-film reactor where the intermediates accrue molecular complexity as they progress through the flow system. Flow chemistry allows rapid multistep transformations to occur via reaction compartmentalization, an approach not amenable to using conventional flasks. Thin film processing can also access facile in situ solvent exchange to drive reaction efficiency, and through this method, α-aminophosphonate synthesis requires only 443 s residence time to produce 3.22 g h(-1) . Assembly-line synthesis allows unprecedented reaction flexibility and processing efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

Institute of Scientific and Technical Information of China (English)

Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

2009-01-01

Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

Sequential multiple-step europium ion implantation and annealing of GaN

KAUST Repository

Miranda, S. M C; Edwards, Paul R.; O'Donnell, Kevin Peter; Boćkowski, Michał X.; Alves, Eduardo Jorge; Roqan, Iman S.; Vantomme, André ; Lorenz, Katharina

2014-01-01

Sequential multiple Eu ion implantations at low fluence (1×1013 cm-2 at 300 keV) and subsequent rapid thermal annealing (RTA) steps (30 s at 1000 °C or 1100 °C) were performed on high quality nominally undoped GaN films grown by metal organic chemical vapour deposition (MOCVD) and medium quality GaN:Mg grown by hydride vapour phase epitaxy (HVPE). Compared to samples implanted in a single step, multiple implantation/annealing shows only marginal structural improvement for the MOCVD samples, but a significant improvement of crystal quality and optical activation of Eu was achieved in the HVPE films. This improvement is attributed to the lower crystalline quality of the starting material, which probably enhances the diffusion of defects and acts to facilitate the annealing of implantation damage and the effective incorporation of the Eu ions in the crystal structure. Optical activation of Eu3+ ions in the HVPE samples was further improved by high temperature and high pressure annealing (HTHP) up to 1400 °C. After HTHP annealing the main room temperature cathodo- and photoluminescence line in Mg-doped samples lies at ∼ 619 nm, characteristic of a known Mg-related Eu3+ centre, while after RTA treatment the dominant line lies at ∼ 622 nm, typical for undoped GaN:Eu. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sequential multiple-step europium ion implantation and annealing of GaN

KAUST Repository

Miranda, S. M C

2014-01-20

Sequential multiple Eu ion implantations at low fluence (1×1013 cm-2 at 300 keV) and subsequent rapid thermal annealing (RTA) steps (30 s at 1000 °C or 1100 °C) were performed on high quality nominally undoped GaN films grown by metal organic chemical vapour deposition (MOCVD) and medium quality GaN:Mg grown by hydride vapour phase epitaxy (HVPE). Compared to samples implanted in a single step, multiple implantation/annealing shows only marginal structural improvement for the MOCVD samples, but a significant improvement of crystal quality and optical activation of Eu was achieved in the HVPE films. This improvement is attributed to the lower crystalline quality of the starting material, which probably enhances the diffusion of defects and acts to facilitate the annealing of implantation damage and the effective incorporation of the Eu ions in the crystal structure. Optical activation of Eu3+ ions in the HVPE samples was further improved by high temperature and high pressure annealing (HTHP) up to 1400 °C. After HTHP annealing the main room temperature cathodo- and photoluminescence line in Mg-doped samples lies at ∼ 619 nm, characteristic of a known Mg-related Eu3+ centre, while after RTA treatment the dominant line lies at ∼ 622 nm, typical for undoped GaN:Eu. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Determination of the annealing for AISI430 steel in a continous furnace

International Nuclear Information System (INIS)

Pinto, A.H.; Diab Junior, A.

1984-01-01

It's discussed a mathematical model, which represents the heating of a steel piece inside a continuous annealing furnace. It's described the experimental technique used to obtain good annealing conditions for a required quality. (Author) [pt

Application of annealing for extension of WWER vessel lives

International Nuclear Information System (INIS)

Badanin, V.; Dragunow, Yu.G.; Fedorov, V.; Gorynin, I.; Nickolaev, V.

1992-01-01

The safe operation of nuclear power plants (NPP) is dependent upon the assurance that the reactor pressure vessel will not fail in a brittle manner when the effects of radiation embrittlement are taken into account. The recovery of the properties of the irradiated materials is an important way of extending the operating life of a reactor vessel. The intent of this paper is to demonstrate the efficiency of thermal annealing for the recovery of reactor vessel material properties and to present the implications for extended service life. In order to substantiate the application of annealing to the extensior of the service life of vessels, detailed investigations were conducted which involved thermal annealing temperature and time, fast neutron fluence, and metallurgical factors (i.e. impurity contents) on the recovery of properties after the annealing of irradiated materials. Similar studies were continued to determine predictive methods for radiation embrittlement after repeated annealings. In May 1987 the first pilot annealing of a commercial reactor vessel (Novo-Voronezhskaya, III, NPP) was performed. The development of the annealing equipment and investigations performed to test the annealing process proved successful, and an improved safe operation for the reactor vessel was thus atttained providing for an extended service life. (orig.)

Susceptor and proximity rapid thermal annealing of InP

International Nuclear Information System (INIS)

Katz, A.; Pearton, S.J.; Geva, M.

1990-01-01

This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

Monitoring and modelling of a continuous from-powder-to-tablet process line

DEFF Research Database (Denmark)

Mortier, Séverine T.F.C.; Nopens, Ingmar; De Beer, Thomas

2014-01-01

-time adjustment of critical input variables to ensure that the process stays within the Design Space. Mechanistic models are very useful for this purpose as, once validated, several tools can be applied to gain further process knowledge, for example uncertainty and sensitivity analysis. In addition, several......The intention to shift from batch to continuous production processes within the pharmaceutical industry enhances the need to monitor and control the process in-line and real-time to continuously guarantee the end-product quality. Mass and energy balances have been successfully applied to a drying...... process which is part of a continuous from-powder-to-tablet manufacturing line to calculate the residual moisture content of granules leaving the drying unit on the basis of continuously generated data from univariate sensors. Next to monitoring, the application of continuous processes demands also real...

ACTIVITY-BASED COSTING DAN SIMULATED ANNEALING UNTUK PENCARIAN RUTE PADA FLEXIBLE MANUFACTURING SYSTEMS

Directory of Open Access Journals (Sweden)

Gregorius Satia Budhi

2003-01-01

Full Text Available Flexible Manufacturing System (FMS is a manufacturing system that is formed from several Numerical Controlled Machines combine with material handling system, so that different jobs can be worked by different machines sequences. FMS combine the high productivity and flexibility of Transfer Line and Job Shop manufacturing system. In this reasearch, Activity-Based Costing(ABC approach was used as the weight to search the operation route in the proper machine, so that the total production cost can be optimized. The search method that was used in this experiment is Simulated Annealling, a variant form Hill Climbing Search method. An ideal operation time to proses a part was used as the annealling schedule. From the empirical test, it could be proved that the use of ABC approach and Simulated Annealing to search the route (routing process can optimize the Total Production Cost. In the other hand, the use of ideal operation time to process a part as annealing schedule can control the processing time well. Abstract in Bahasa Indonesia : Flexible Manufacturing System (FMS adalah sistem manufaktur yang tersusun dari mesin-mesin Numerical Control (NC yang dikombinasi dengan Sistem Penanganan Material, sehingga job-job berbeda dikerjakan oleh mesin-mesin dengan alur yang berlainan. FMS menggabungkan produktifitas dan fleksibilitas yang tinggi dari Sistem Manufaktur Transfer Line dan Job Shop. Pada riset ini pendekatan Activity-Based Costing (ABC digunakan sebagai bobot / weight dalam pencarian rute operasi pada mesin yang tepat, untuk lebih mengoptimasi biaya produksi secara keseluruhan. Adapun metode Searching yang digunakan adalah Simulated Annealing yang merupakan varian dari metode searching Hill Climbing. Waktu operasi ideal untuk memproses sebuah part digunakan sebagai Annealing Schedulenya. Dari hasil pengujian empiris dapat dibuktikan bahwa penggunaan pendekatan ABC dan Simulated Annealing untuk proses pencarian rute (routing dapat lebih

Non-stoquastic Hamiltonians in quantum annealing via geometric phases

Science.gov (United States)

Vinci, Walter; Lidar, Daniel A.

2017-09-01

We argue that a complete description of quantum annealing implemented with continuous variables must take into account the non-adiabatic Aharonov-Anandan geometric phase that arises when the system Hamiltonian changes during the anneal. We show that this geometric effect leads to the appearance of non-stoquasticity in the effective quantum Ising Hamiltonians that are typically used to describe quantum annealing with flux qubits. We explicitly demonstrate the effect of this geometric non-stoquasticity when quantum annealing is performed with a system of one and two coupled flux qubits. The realization of non-stoquastic Hamiltonians has important implications from a computational complexity perspective, since it is believed that in many cases quantum annealing with stoquastic Hamiltonians can be efficiently simulated via classical algorithms such as Quantum Monte Carlo. It is well known that the direct implementation of non-stoquastic Hamiltonians with flux qubits is particularly challenging. Our results suggest an alternative path for the implementation of non-stoquasticity via geometric phases that can be exploited for computational purposes.

Effects of annealing on the recombination dynamics of low-temperature grown ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Hilker, B.; Bekeny, C.; Voss, T.; Gutowski, J. [IFP, Universitaet Bremen, 28334 Bremen (Germany); Hauschild, R.; Kalt, H. [Universitaet Karlsruhe, 76128 Karlsruhe (Germany); Postels, B.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, 38023 Braunschweig (Germany)

2007-07-01

We present systematic temperature and excitation density dependent time-resolved photoluminescence (TRPL) measurements of as-grown and annealed ZnO nanorods fabricated by an aqueous chemical growth (ACG) technique at {proportional_to}90 C. The as-grown nanorods show strong nearband-edge and rather weak deep-level emission indicating their already good optical quality. At 4K, we find a broad emission line at 3.36 eV (line width 30 meV) which we attribute to recombination from a donor band formed through the high donor concentration. After annealing in oxygen and nitrogen atmospheres at 600-800 C well-resolved and sharper excitonic transitions are observed. To understand the recombination dynamics in the nanorods we carried out TRPL measurements using a frequency-doubled femtosecond laser and a streak camera. The as-grown sample shows a very fast monoexponential decay time of {proportional_to}10ps independent of temperature and excitation density. In contrast, the annealed samples exhibit a biexponential decay. Each a fast {tau}1 and a slow {tau}2 time constant have been determined for all annealed samples both of them significantly varying depending on the annealing atmosphere and temperature. This will be discussed on the basis of a phenomenological rate-equation model.

Rapid thermal pulse annealing

International Nuclear Information System (INIS)

Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

1976-01-01

Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

Annealing to Mitigate Pitting in Electropolished Niobium Coupons and SRF Cavities

Energy Technology Data Exchange (ETDEWEB)

Cooley, L.D.; Hahn, E.; Hicks, D.; Romanenko, A.; Schuessler, R.; Thompson, C.; /Fermilab

2011-06-08

Ongoing studies at Fermilab investigate whether dislocations and other factors instigate pitting during cavity electropolishing (EP), despite careful processing controls and the inherent leveling mechanism of EP itself. Here, cold-worked niobium coupons, which exhibited increased tendencies for pitting in our past study, were annealed in a high vacuum furnace and subsequently processed by EP. Laser confocal scanning microscopy and special defect counting algorithms were used to assess the population of pits formed. Hardness measurements indicated that annealing for 2 hours at 800 C produced recovery, whereas annealing for 12 hours at 600 C did not, as is consistent with known changes for cavities annealed in a similar way. The 800 C anneal was effective in some cases but not others, and we discuss reasons why tendencies for pitting remain. We discuss implications for cavities and continued work to understand pitting.

Traffic Flow Optimization Using a Quantum Annealer

Directory of Open Access Journals (Sweden)

Florian Neukart

2017-12-01

Full Text Available Quantum annealing algorithms belong to the class of metaheuristic tools, applicable for solving binary optimization problems. Hardware implementations of quantum annealing, such as the quantum processing units (QPUs produced by D-Wave Systems, have been subject to multiple analyses in research, with the aim of characterizing the technology’s usefulness for optimization and sampling tasks. In this paper, we present a real-world application that uses quantum technologies. Specifically, we show how to map certain parts of a real-world traffic flow optimization problem to be suitable for quantum annealing. We show that time-critical optimization tasks, such as continuous redistribution of position data for cars in dense road networks, are suitable candidates for quantum computing. Due to the limited size and connectivity of current-generation D-Wave QPUs, we use a hybrid quantum and classical approach to solve the traffic flow problem.

Review of continuous ceramic-lined melter and associated experience at PNL

International Nuclear Information System (INIS)

Buelt, J.L.; Chapman, C.C.; Barnes, S.M.; Dierks, R.D.

1979-01-01

Development of continuous, ceramic-lined melters applicable to immobilization of radioactive wastes began at PNL in 1973. A comprehensive program is curretly in progress. The melters constructed at PNL have incorporated remote and reliable design features necessary for radioactive use. The extensive experience with vitrification of simulated wastes has proven the continuous melter's applicability to radioactive waste immobilization

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

Science.gov (United States)

Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

1973-01-01

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Annealing effect on spin density of broken bonds and on the structure of amorphous germanium

International Nuclear Information System (INIS)

Bukhan'ko, F.N.; Okunev, V.D.; Samojlenko, Z.A.

1989-01-01

Dependence of volumetric spin density of broken bonds in a-Ge films, produced by cathode sputtering in argon, on the annealing temperature is investigated by ESR method. The film structure is controlled by the X-ray method. Two ESR lines with g=2.019 and g=2.003, their intensities changing non-monotonously with annealing temperature are observed. The line with g=2.019 is typical of only amorphous germanium state, and the line with g=2.003 is preserved after film crystallization. Under comparison of results with structural data a conclusion is made that the observed lines in ESR spectra are linked with broken bonds in peripheral regions of two types of clusters. The line with g=2.003 is conditioned by broken bonds in the peripheral cluster regions with standard cubic atom packing and the line with g=2.019 is linked with clusters of hexagonal type which is not typical of crystalline germanium standard structure

The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

International Nuclear Information System (INIS)

Pagonis, Vasilis

1998-01-01

Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

1979-01-01

This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

Stochastic search in structural optimization - Genetic algorithms and simulated annealing

Science.gov (United States)

Hajela, Prabhat

1993-01-01

An account is given of illustrative applications of genetic algorithms and simulated annealing methods in structural optimization. The advantages of such stochastic search methods over traditional mathematical programming strategies are emphasized; it is noted that these methods offer a significantly higher probability of locating the global optimum in a multimodal design space. Both genetic-search and simulated annealing can be effectively used in problems with a mix of continuous, discrete, and integer design variables.

Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD

International Nuclear Information System (INIS)

Dangbegnon, J.K.; Talla, K.; Botha, J.R.

2011-01-01

The optical properties of ZnO grown on (1 0 0) GaAs substrate using metalorganic chemical vapor deposition are investigated by photoluminescence (PL) spectroscopy. Postgrowth annealing in nitrogen and oxygen was performed for different times and temperatures in order to incorporate As from the substrate into the ZnO thin films. The PL spectra of the samples annealed in different ambients reveal that the effect of As diffusion into the ZnO thin films is more pronounced when the annealing is performed in oxygen at 550 o C. The 11 K PL spectra show the appearance of a transition at ∼3.35 eV after annealing in oxygen at 550 deg. C for 1 h. A further increase in the annealing temperature leads to the disappearance of this line, while for annealing times longer than 2 h at 550 o C, it is no longer prominent. The increase in intensity of this new transition is also accompanied by the enhancement of radiative centers related to structural defects, such as the stacking fault-related transition at 3.31 eV and the Y-line. Temperature dependent PL illustrates the excitonic nature of the new transition at ∼3.35 eV, which is therefore assigned to (A 0 , X) transition, where the acceptor is possibly the 2V Zn -As Zn complex, with an activation energy E A in the range of 160-240 meV. Furthermore, the enhancement of the radiative centers related to structural defects is regarded as evidence that As atoms tend to segregate in the vicinity of structural defects to relieve local strain. - Highlights: → (A 0 , X) and DAP transitions at 3.35 and 3.26 eV related to arsenic acceptor. → Oxygen annealing ambient promotes arsenic acceptor into ZnO films. → Increase in structural defect lines is related to arsenic incorporation. → Annealing at optimal temperature of around 550 deg. C is necessary for arsenic incorporation.

Simulated annealing method for electronic circuits design: adaptation and comparison with other optimization methods

International Nuclear Information System (INIS)

Berthiau, G.

1995-10-01

The circuit design problem consists in determining acceptable parameter values (resistors, capacitors, transistors geometries ...) which allow the circuit to meet various user given operational criteria (DC consumption, AC bandwidth, transient times ...). This task is equivalent to a multidimensional and/or multi objective optimization problem: n-variables functions have to be minimized in an hyper-rectangular domain ; equality constraints can be eventually specified. A similar problem consists in fitting component models. In this way, the optimization variables are the model parameters and one aims at minimizing a cost function built on the error between the model response and the data measured on the component. The chosen optimization method for this kind of problem is the simulated annealing method. This method, provided by the combinatorial optimization domain, has been adapted and compared with other global optimization methods for the continuous variables problems. An efficient strategy of variables discretization and a set of complementary stopping criteria have been proposed. The different parameters of the method have been adjusted with analytical functions of which minima are known, classically used in the literature. Our simulated annealing algorithm has been coupled with an open electrical simulator SPICE-PAC of which the modular structure allows the chaining of simulations required by the circuit optimization process. We proposed, for high-dimensional problems, a partitioning technique which ensures proportionality between CPU-time and variables number. To compare our method with others, we have adapted three other methods coming from combinatorial optimization domain - the threshold method, a genetic algorithm and the Tabu search method - The tests have been performed on the same set of test functions and the results allow a first comparison between these methods applied to continuous optimization variables. Finally, our simulated annealing program

Overall model of the dynamic behaviour of the steel strip in an annealing heating furnace on a hot-dip galvanizing line

Energy Technology Data Exchange (ETDEWEB)

Martinez-de-Pison, F.J.; Pernia, A.; Jimenez-Macias, E.; Fernandez, R.

2010-07-01

Predicting the temperature of the steel strip in the annealing process in a hot-dip galvanizing line (HDGL) is important to ensure the physical properties of the processed material. The development of an accurate model that is capable of predicting the temperature the strip will reach according to the furnaces variations in temperature and speed, its dimensions and the steels chemical properties, is a requirement that is being increasingly called for by industrial plants of this nature. This paper presents a comparative study made between several types of algorithms of Data Mining and Artificial Intelligence for the design of an efficient and overall prediction model that will allow determining the strips variation in temperature according to the physico-chemical specifications of the coils to be processed, and fluctuations in temperature and speed that are recorded within the annealing process. The ultimate goal is to find a model that is effectively applicable to coils of new types of steel or sizes that are being processed for the first time. This model renders it possible to fine-tune the control model in order to standardise the treatment in areas of the strip in which there is a transition between coils of different sizes or types of steel. (Author).

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

Science.gov (United States)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

Science.gov (United States)

Vinci, Walter; Lidar, Daniel A.

2018-02-01

Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

International Nuclear Information System (INIS)

Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

1977-01-01

The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

International Nuclear Information System (INIS)

Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

2011-01-01

Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

Cascade annealing: an overview

International Nuclear Information System (INIS)

Doran, D.G.; Schiffgens, J.O.

1976-04-01

Concepts and an overview of radiation displacement damage modeling and annealing kinetics are presented. Short-term annealing methodology is described and results of annealing simulations performed on damage cascades generated using the Marlowe and Cascade programs are included. Observations concerning the inconsistencies and inadequacies of current methods are presented along with simulation of high energy cascades and simulation of longer-term annealing

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

An automated ion implant/pulse anneal machine for low cost silicon cell production

International Nuclear Information System (INIS)

Armini, A.J.; Bunker, S.N.; Spitzer, M.B.

1982-01-01

The continuing development of a high throughput ion implanter and a pulsed electron beam annealer designed for dedicated silicon solar cell manufacture is reviewed. This equipment is intended for production of junctions in 10 cm wide wafers at a throughput up to 10 MWsub(p) per year. The principal features of the implanter are the lack of mass analysis and defocusing utilizing electrostatic deflection. The implanted surface is annealed by liquid phase epitaxy resulting from a single burst of a large area electron beam. Cells with non-mass analyzed ion implantation have yielded AM1 cell efficiencies in excess of 15%. Pulse annealed Czochralski cells have been made with AM1 efficiencies of 13% vs. 15% for a furnace annealed group. Results of pulse annealing of polycrystalline materials indicate that cell performance comparable to diffusion can be obtained. (Auth.)

Influence of alloying and secondary annealing on anneal hardening ...

Indian Academy of Sciences (India)

Unknown

Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys. SVETLANA NESTOROVIC. Technical Faculty Bor, University of Belgrade, Bor, Yugoslavia. MS received 11 February 2004; revised 29 October 2004. Abstract. This paper reports results of investigation carried out on sintered ...

Defect production in simulated cascades: Cascade quenching and short-term annealing

International Nuclear Information System (INIS)

Heinisch, H.L.

1983-01-01

Defect production in displacement cascades in copper has been modeled using the MARLOWE code to generate cascades and the stochastic annealing code ALSOME to simulate cascade quenching and short-term annealing of isolated cascades. Quenching is accomplished by using exaggerated values for defect mobilities and for critical reaction distances in ALSOME for a very short time. The quenched cascades are then short-term annealed with normal parameter values. The quenching parameter values were empirically determined by comparison with results of resistivity measurements. Throughout the collisional, quenching and short-term annealing phases of cascade development, the high energy cascades continue to behave as a collection of independent lower energy lobes. For recoils above about 30 keV the total number of defects and the numbers of free defects scale with the damage energy. As the energy decreases from 30 keV, defect production varies with the changing nature of the cascade configuration, resulting in more defects per unit damage energy. The simulated annealing of a low fluence of interacting cascades revealed an interstitial shielding effect on depleted zones during Stage I recovery. (orig.)

Calling line managers in employee continuous professional development in South East Asia

Directory of Open Access Journals (Sweden)

Anubama Ramachandra

2011-11-01

Full Text Available Purpose: The paper aims to study the relationship of Line Managers’ (LMs Human Resource (HR role and its facets within employee’s Continuous Professional Development (CPD.Design/methodology/approach: A quantitative approach using 100 questionnaires were distributed to line managers in a South East Asia with a response rate of 87%.Findings: Results depict that LMs are actively involved in Strategic Partner, Employee Champion, and Change Agent roles. Study also shows that these three HR roles correlate with employee CPD. LMs’ are neither involved in Administrative Expert role, nor it correlates with employee Continuous Professional Development.Research limitations: Inability of the line managers to be fully involved with the four HR roles constraints the process of line manager deployment of HR roles specifically to employee CPD.Practical implications: Argues that the importance of strategic partner, employee champion, and change agent roles are the most important barrier and enabler of employee CPD, thus indirectly promoting organizational success and productivity.Social implications: Highlights the difficulties of managing organisations by getting the line managers directly involve in the development of employee CPD. Many line managers have to be made and given opportunities to develop their capabilities on this platform. Contends that HR can help an organization to succeed, provided that all line managers understand their roles, work together and take responsibility for their contribution. In addition is the adoption of the HR roles for the smooth delivery of HR functions which aligns with the overall organizational success.Originality/value: Specific HR roles are significant importance to the development of employee CPD within the setting of this South East Asian organization.

A nuclear on-line sensor for continuous control of vanadium content in oil pipelines

International Nuclear Information System (INIS)

Rizk, R.A.M.

1989-01-01

Trace amounts of vanadium in crude oil and in heavy distillate fuels are very harmful due to their corrosive action. Thus the necessity arises for continuous control of the vanadium content in oil pipelines. Moreover, the development of a nuclear on-line sensor that can continuously analyze the vanadium content in oil pipelines may lead to a better control of processing operations. In this paper a feasibility study for on-line analysis of vanadium in crude oil by means of neutron activation analysis is presented. (author)

Reactor pressure vessel thermal annealing

International Nuclear Information System (INIS)

Lee, A.D.

1997-01-01

The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

Very low temperature rise laser annealing of radiation-damaged solar cells in orbit

International Nuclear Information System (INIS)

Poulek, V.

1988-01-01

Solar cells of all space objects are damaged by radiation in orbit. This damage, however, can be removed by laser annealing. A new in-orbit laser regeneration system for both body- and spin-stabilized space objects is proposed. For successful annealing of solar cells damaged by 10 years' radiation dose in orbit it is necessary for the temperature rise in the incidence point of the laser beam to reach about 400 0 C. By continuous regeneration, however, between two annealing cycles the solar cells are hit by about two orders of magnitude lower radiation dose. This makes it possible to carry out the regeneration at a temperature rise well under 1 0 C! If an optimal laser regeneration system is used, such low temperature rise laser annealing of radiation-damaged solar cells is possible. A semiconductor GaAlAs diode laser with output power up to 10 mW CW was used for annealing. Some results of the very low temperature rise annealing experiment are given in this paper. (author)

On the annealing of the EPR dislocation signal in silicon

International Nuclear Information System (INIS)

Zolotukhin, M.N.; Kveder, V.V.; Osip'yan, Yu.A.

1981-01-01

The annealing kinetics of the (EPR) dislocation signal (D-centers) in silicon is studied. The disappearance of the dislocation EPR signal as a result of annealing is ascribed to rearrangement of the nuclei of the partial dislocations accompanied by pairwise ''closing'' of the broken bonds in the S=0 state. The height of the energy barrier for the rearrangement process is approximately 2 eV. A residual ''nonannealing'' EPR signal is observed in strongly deformed silicon crystals. It resembles an isotropic line with a width approximately 7.5 Oe and a g-factor approximately 2.006. It is suggested that the respective EPR centers (O-centers) are similar to the EPR centers in amorphic silicon [ru

Very fast simulated re-annealing

OpenAIRE

L. Ingber

1989-01-01

Draft An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ‘‘temperature’’ T decreasing exponentially in annealing-time k, T = T0 exp(−ck1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multidimensional parameter-space. This annealing schedule is faster than fast Cauchy annealing, ...

Order-disorder transitions in lattice gases with annealed reactive constraints

Science.gov (United States)

Dudka, Maxym; Bénichou, Olivier; Oshanin, Gleb

2018-04-01

We study equilibrium properties of catalytically-activated reactions taking place on a lattice of adsorption sites. The particles undergo continuous exchanges with a reservoir maintained at a constant chemical potential μ and react when they appear at the neighbouring sites, provided that some reactive conditions are fulfilled. We model the latter in two different ways: in the Model I some fraction p of the bonds connecting neighbouring sites possesses special catalytic properties such that any two As appearing on the sites connected by such a bond instantaneously react and desorb. In the Model II some fraction p of the adsorption sites possesses such properties and neighbouring particles react if at least one of them resides on a catalytic site. For the case of annealed disorder in the distribution of the catalyst, which is tantamount to the situation when the reaction may take place at any point on the lattice but happens with a finite probability p, we provide an exact solution for both models for the interior of an infinitely large Cayley tree—the so-called Bethe lattice. We show that both models exhibit a rich critical behaviour: for the annealed Model I it is characterised by a transition into an ordered state and a re-entrant transition into a disordered phase, which both are continuous. For the annealed Model II, which represents a rather exotic model of statistical mechanics in which interactions of any particle with its environment have a peculiar Boolean form, the transition to an ordered state is always continuous, while the re-entrant transition into the disordered phase may be either continuous or discontinuous, depending on the value of p.

Strong white photoluminescence from annealed zeolites

International Nuclear Information System (INIS)

Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

2014-01-01

The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

Spin-echo observation of radio frequency induced flux lattice annealing (RIFLA) in a type-II superconductor

International Nuclear Information System (INIS)

Clark, W.G.; Hanson, M.E.; Wong, W.H.

1999-01-01

We report the annealing of a strained flux line lattice (FLL) in 10 μm diameter type-II superconducting NbTi filaments by an RF magnetic field at 4.2 K in a magnetic field of 1 T. The strained FLL is prepared by slowly changing the direction of the applied magnetic field. When the RF magnetic field used to generate a 93 Nb NMR spin echo anneals the FLL, there is a corresponding reduction in the amplitude of the spin echo. Starting from an annealed condition, a rotation threshold of 3 mr is needed to produce enough FLL strain to be observed in these measurements. (orig.)

X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

Science.gov (United States)

Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

2018-05-01

In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration ( Q a) and the activation energy of microstrain relaxation ( Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

Science.gov (United States)

Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

2018-04-01

In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration (Q a) and the activation energy of microstrain relaxation (Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

International Nuclear Information System (INIS)

Naito, Muneyuki; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko

2007-01-01

We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10 17 and 4.0 x 10 17 cm -2 . A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi 2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi 2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

Energy Technology Data Exchange (ETDEWEB)

Luo, Guang-Wen; Qi, Zhen-Yu, E-mail: qizhy@sysucc.org.cn; Deng, Xiao-Wu [Department of Radiation Oncology, Sun Yat-Sen University Cancer Center and State Key Laboratory of Oncology in Southern China, Collaborative Innovation Center of Cancer Medicine, Guangzhou 510060 (China); Rosenfeld, Anatoly [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2522 (Australia)

2014-05-15

Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd{sub max} using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

Science.gov (United States)

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-05-01

To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

International Nuclear Information System (INIS)

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-01-01

Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd max using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic

irradiation growth in annealed Zr2.5wt%Nb at 3530K

International Nuclear Information System (INIS)

Rogerson, A.; Murgatroyd, R.A.

1978-10-01

Zr 2.5wt%Nb growth specimens have been irradiated at 353 0 K to a fast neutron dose of approximately 4.0 x 10 25 n/m 2 . Specimens were taken from the longitudinal and transverse directions of a nominally annealed, seam-welded tube and irradiated in both the stress relieved and fully annealed conditions. Growth in these specimens is characterised by large positive and negative strains in the longitudinal and transverse directions respectively, with dimensional changes in weld material exhibiting intermediate growth behaviour. The results are compared with growth data on both annealed and cold worked Zircaloy-2 at 353 0 K and discussed in terms of the effect of texture, grain size, and cold work on irradiation growth. It is concluded that the continuation of growth to high doses in annealed Zr-2.5wt%Nb at 353 0 K results from interstitial induced dislocation climb with vacancies diffusing to grain boundaries. (author)

In-situ PXRD Study on the Annealing of SrFe12O19 Nano Particles

DEFF Research Database (Denmark)

Gjørup, Frederik; Saura-Múzquiz, Matilde; Christensen, Mogens

Nano sized strontium hexaferrite is synthesized using a hydrothermal flow synthesis, at temperature and pressure above waters critical point. The nano particles are hexagonal platelets, with the easy axis of magnetization along the short c-axis of the platelet. The nano powders are normally pressed...... and annealed to form mechanically stable pellets. This study uses In-situ Powder X-Ray Diffraction (PXRD) to examine the particle growth during annealing of the powder, with emphasis on the ratio between the axes of the platelets (a/c-ratio). By applying an external magnetic field before annealing......, the particles will align along the field lines of the external magnet, and the contact surfaces along the c-axis should increase. It will be examined whether the external magnetic field increases the growth along the c-axis relative to the a/b-axis, compared to annealing without prior magnetization....

Surface Selective Oxide Reduction During the Intercritical Annealing of Medium Mn Steel

Science.gov (United States)

Jo, Kyoung Rae; Cho, Lawrence; Oh, Jong Han; Kim, Myoung Soo; Kang, Ki Cheol; De Cooman, Bruno C.

2017-08-01

Third generation advanced high-strength steels achieve an excellent strength-ductility balance using a cost-effective alloy composition. During the continuous annealing of medium Mn steel, the formation of an external selective oxide layer of MnO has a negative impact on the coating quality after galvanizing. A procedure to reduce the selective oxide was therefore developed. It involves annealing in the temperature range of 1073 K to 1323 K (800 °C to 1050 °C) in a HNx gas atmosphere. Annealing at higher temperatures and the use of larger H2 volume fractions are shown to make the gas atmosphere reducing with respect to MnO. The reduction of the surface MnO layer was observed by SEM, GDOES, and cross-sectional TEM analysis.

Manufacture of Radio Frequency Micromachined Switches with Annealing

OpenAIRE

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

Semiconductor annealing

International Nuclear Information System (INIS)

Young, J.M.; Scovell, P.D.

1982-01-01

A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Science.gov (United States)

Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

2012-06-01

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

Directory of Open Access Journals (Sweden)

Chong-Chong Dai

2014-04-01

Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

Manufacture of Radio Frequency Micromachined Switches with Annealing

Directory of Open Access Journals (Sweden)

Cheng-Yang Lin

2014-01-01

Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of radio frequency micromachined switches with annealing.

Science.gov (United States)

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

On-Line Ion Exchange Liquid Chromatography as a Process Analytical Technology for Monoclonal Antibody Characterization in Continuous Bioprocessing.

Science.gov (United States)

Patel, Bhumit A; Pinto, Nuno D S; Gospodarek, Adrian; Kilgore, Bruce; Goswami, Kudrat; Napoli, William N; Desai, Jayesh; Heo, Jun H; Panzera, Dominick; Pollard, David; Richardson, Daisy; Brower, Mark; Richardson, Douglas D

2017-11-07

Combining process analytical technology (PAT) with continuous production provides a powerful tool to observe and control monoclonal antibody (mAb) fermentation and purification processes. This work demonstrates on-line liquid chromatography (on-line LC) as a PAT tool for monitoring a continuous biologics process and forced degradation studies. Specifically, this work focused on ion exchange chromatography (IEX), which is a critical separation technique to detect charge variants. Product-related impurities, including charge variants, that impact function are classified as critical quality attributes (CQAs). First, we confirmed no significant differences were observed in the charge heterogeneity profile of a mAb through both at-line and on-line sampling and that the on-line method has the ability to rapidly detect changes in protein quality over time. The robustness and versatility of the PAT methods were tested by sampling from two purification locations in a continuous mAb process. The PAT IEX methods used with on-line LC were a weak cation exchange (WCX) separation and a newly developed shorter strong cation exchange (SCX) assay. Both methods provided similar results with the distribution of percent acidic, main, and basic species remaining unchanged over a 2 week period. Second, a forced degradation study showed an increase in acidic species and a decrease in basic species when sampled on-line over 7 days. These applications further strengthen the use of on-line LC to monitor CQAs of a mAb continuously with various PAT IEX analytical methods. Implementation of on-line IEX will enable faster decision making during process development and could potentially be applied to control in biomanufacturing.

Annealing behavior of a cast Mg-Gd-Y-Zr alloy with necklace fine grains developed under hot deformation

Energy Technology Data Exchange (ETDEWEB)

Yang, Yi [Educational Key Laboratory of Nonferrous Metal Materials Science and Engineering, School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yang, Xuyue, E-mail: yangxuyue@mail.csu.edu.cn [Educational Key Laboratory of Nonferrous Metal Materials Science and Engineering, School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Nonferrous Metal Oriented Advanced Structural Materials and Manufacturing Cooperative Innovation Center, Central South University, Changsha 410083 (China); Xiao, Zhenyu; Zhang, Duxiu [Educational Key Laboratory of Nonferrous Metal Materials Science and Engineering, School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Jun [Institute for Frontier Materials, Deakin University, Geelong, VIC 3216 (Australia); Sakai, Taku [UEC Tokyo (The University of Electro-Communications), Chofu, Tokyo 182-8585 (Japan)

2017-03-14

The microstructure and texture development of a cast Mg-Gd-Y-Zr alloy during hot deformation and subsequent annealing were investigated by optical microscopy (OM) and electron backscattered diffraction (EBSD) technology. Initial microstructures with partially and fully developed new fine grains (NFGs), separately attended by continuous or interrupted hot forging, were various mixed grain structures composed of NFGs in necklace and retained coarse grains. It is shown that, during annealing, the development of grain size can be divided into three stages: i.e. an incubation of grain growth, a rapid coarsening and a normal grain growth. After a long time annealing of over 10{sup 4} ks at 693 K, the average grain size for samples continuous compressed to ε=1.2 and those interrupted compressed to ε=1.6 were close. Moreover, orientations of such strain-induced fine grains were relatively randomly distributed, leading to a weakened basal texture, while the basal plane of retained coarse grains were perpendicular to the forging direction. Such texture even became weaker during subsequent annealing. The results show that the development of necklace NFGs during hot deformation can be effective for homogeneous grain refinement under subsequent annealing.

Computational algorithm for molybdenite concentrate annealing

International Nuclear Information System (INIS)

Alkatseva, V.M.

1995-01-01

Computational algorithm is presented for annealing of molybdenite concentrate with granulated return dust and that of granulated molybdenite concentrate. The algorithm differs from the known analogies for sulphide raw material annealing by including the calculation of return dust mass in stationary annealing; the latter quantity varies form the return dust mass value obtained in the first iteration step. Masses of solid products are determined by distribution of concentrate annealing products, including return dust and benthonite. The algorithm is applied to computations for annealing of other sulphide materials. 3 refs

Application of continual annealing and roll bonding (CAR) process for manufacturing Al–Zn multilayered composites

International Nuclear Information System (INIS)

Dehsorkhi, Reza Nasiri; Qods, Fathallah; Tajally, Mohammad

2012-01-01

Highlights: ► CAR process was performed on Al–Zn composite. ► Good bonding between layers was achieved by increasing the number of CAR cycles. ► With increasing number of cycles, a good distribution of Zn fragmentations was achieved. ► The composites which were produced by CAR process, possess a higher tensile strength and elongation than ARB process. ► By EDX analysis it is proved that Al and Zn atoms would diffuse with each other. - Abstract: In this study, an aluminium–zinc composite was produced for the first time by using a continual annealing and roll-bonding (CAR) process. A composite with homogeneous distribution of fragmented zinc layers in aluminium matrix was produced after ten CAR cycles. The results demonstrate that tensile strength of the final composites increases up to 410 MPa, which is about 4 times higher than those of initial aluminium and zinc sheets. However, elongation of the composite reduced down to 4% after ten CAR cycles. The fracture surfaces of the tensile samples were observed by scanning electron microscope (SEM) to evaluate the failure mode. Observations reveal that the failure mode in CAR-processed composites is a typical ductile fracture which shows deep dimples in samples with few CAR cycles, while the failure mode was shear ductile fracture with shallow and elongated dimples in samples with ten CAR cycles.

Semi-continuous on-line uranium ore analyzer

International Nuclear Information System (INIS)

Campbell, P.; Gurdy, E.M.; Hatchowski, L.

1984-01-01

The efficient process control of a uranium mill and its associated mining operation requires a nearly continuous knowledge of the uranium concentration in the ore. Generally, the approach is to use laboratory assays of grab samples from the mill feed belt. In some cases, elaborate and expensive systems have been used to ensure random sampling, but even with these systems, mass-balance discrepancies still exist. There is a requirement for an on-line instrument that can give a prompt, accurate analysis of a large portion of the feed stock. The authors have recently evaluated a laboratory system that achieves these goals using neutron activation and delayed neutron counting. The development of the on-line uranium ore analyzer is a consequence of previous work done at the Whiteshell Nuclear Research Establishment (WNRE) (Campbell et al., 1978 and 1981), and is based on the emission of delayed neutrons after the neutron irradiation of fissionable materials. The mechanism of delayed neutron emission has been described (Keepin, 1965), but briefly is as follows. The fission fragments resulting from irradiation are in an excited state. Certain of these delayed fission products, precursors, decay to a more stable state by the emission of a delayed neutron. The delayed neutrons can be divided into six groups with effective half-lives ranging from 0.2-55 sec. It is important to note that more than 50% of the delayed neutrons are emitted within the first 6 sec after irradiation; this has an influence on the design of the analysis instrument

Semiconductor annealing

International Nuclear Information System (INIS)

Young, J.M.; Scovell, P.D.

1981-01-01

A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence

OpenAIRE

Aslan, Kadir; Malyn, Stuart N.; Zhang, Yongxia; Geddes, Chris D.

2008-01-01

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little ...

The effect of long annealing on Pb-doped high-Tc Bi-Sr-Ca-Cu-O systems

Energy Technology Data Exchange (ETDEWEB)

Chandra, S.; Agnihotry, S.A.; Asthana, P.; Nagpal, K.C.; Saini, K.K.; Chanderkant; Sharma, C.P.; Ekbote, S.N. (National Physical Lab., New Delhi (India))

1991-01-16

The lead doped Bi based copper oxide high-Tc superconductors with different nominal compositions and with different annealing time periods are studied. The highest Tc (zero) achieved is 112 K in bulk phase 2223. The varying intensity of the low angle line at 2{theta}{approx equal}4.7deg suggests the gradual formation of the high-Tc phase due to the long annealing of nearly 200 to 250 h. It is also found that the high-Tc phase starts degrading after 250 h of annealing and Tc reduces. The distortion of the 2223 phase is suggested by the broadening of different XRD peaks, also the SEM studies support the above contention. The EDAX studies show no presence of Pb in the crystallites. (orig.).

Management of the Bohunice RPVs annealing procedures

International Nuclear Information System (INIS)

Repka, M.

1994-01-01

The program of annealing regeneration procedure of RPVs units 1 and 2 of NPP V-1 (EBO) realization in the year 1993, is the topic of this paper. In the paper the following steps are described in detail: the preparation works, the annealing procedure realization schedule and safety management: starting with zero conditions, assembling of annealing apparatus, annealing procedure, cooling down and disassembling procedure of annealing apparatus. At the end the programs of annealing of both RPVs including the dosimetry measurements are discussed and evaluated. (author). 3 figs

Mathematical foundation of quantum annealing

International Nuclear Information System (INIS)

Morita, Satoshi; Nishimori, Hidetoshi

2008-01-01

Quantum annealing is a generic name of quantum algorithms that use quantum-mechanical fluctuations to search for the solution of an optimization problem. It shares the basic idea with quantum adiabatic evolution studied actively in quantum computation. The present paper reviews the mathematical and theoretical foundations of quantum annealing. In particular, theorems are presented for convergence conditions of quantum annealing to the target optimal state after an infinite-time evolution following the Schroedinger or stochastic (Monte Carlo) dynamics. It is proved that the same asymptotic behavior of the control parameter guarantees convergence for both the Schroedinger dynamics and the stochastic dynamics in spite of the essential difference of these two types of dynamics. Also described are the prescriptions to reduce errors in the final approximate solution obtained after a long but finite dynamical evolution of quantum annealing. It is shown there that we can reduce errors significantly by an ingenious choice of annealing schedule (time dependence of the control parameter) without compromising computational complexity qualitatively. A review is given on the derivation of the convergence condition for classical simulated annealing from the view point of quantum adiabaticity using a classical-quantum mapping

Modernizing quantum annealing using local searches

International Nuclear Information System (INIS)

Chancellor, Nicholas

2017-01-01

I describe how real quantum annealers may be used to perform local (in state space) searches around specified states, rather than the global searches traditionally implemented in the quantum annealing algorithm (QAA). Such protocols will have numerous advantages over simple quantum annealing. By using such searches the effect of problem mis-specification can be reduced, as only energy differences between the searched states will be relevant. The QAA is an analogue of simulated annealing, a classical numerical technique which has now been superseded. Hence, I explore two strategies to use an annealer in a way which takes advantage of modern classical optimization algorithms. Specifically, I show how sequential calls to quantum annealers can be used to construct analogues of population annealing and parallel tempering which use quantum searches as subroutines. The techniques given here can be applied not only to optimization, but also to sampling. I examine the feasibility of these protocols on real devices and note that implementing such protocols should require minimal if any change to the current design of the flux qubit-based annealers by D-Wave Systems Inc. I further provide proof-of-principle numerical experiments based on quantum Monte Carlo that demonstrate simple examples of the discussed techniques. (paper)

Rapid fabrication of transparent conductive films with controllable sheet resistance on glass substrates by laser annealing of diamond-like carbon films

International Nuclear Information System (INIS)

Lee, Keunhee; Ki, Hyungson

2016-01-01

We report a laser-based method for directly fabricating large-area, transparent conductive films with customizable electrical resistance on glass. In this method, a diamond-like carbon (DLC) film is deposited first on a glass substrate by pulsed laser deposition, which is then annealed in a helium shielding environment by a 2 kW continuous-wave fiber laser with a wavelength of 1070 nm, which is transparent to glass but is absorbed by DLC to transform the amorphous carbons to graphene. When a 510 nm thick film was annealed at a scanning speed of 1 m/s by a 200 μm top-hat laser beam, the sp 3 fraction was decreased from 43.1% to 8.1% after the annealing process, and the transformed film showed a transparency of ∼80% (at 550 nm) and a sheet resistance of ∼2050 Ω/sq. We also showed that sheet resistance and transparency can be controlled by changing processing parameters. To show the scalability of the method, a 15 mm wide line beam was used to produce a 15 mm × 15 mm film. This method is simple, fully scalable, transfer-free and catalyst-free, and we believe that the fabricated films can have many applications with further research, such as transparent heating films, electromagnetic shielding films, and transparent electrodes.

Ensemble annealing of complex physical systems

OpenAIRE

Habeck, Michael

2015-01-01

Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

1978-11-01

Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

The mechanical properties and microstructures of vanadium bearing high strength dual phase steels processed with continuous galvanizing line simulations

Science.gov (United States)

Gong, Yu

For galvanized or galvannealed steels to be commercially successful, they must exhibit several attributes: (i) easy and inexpensive processing in the hot mill, cold mill and on the coating line, (ii) high strength with good formability and spot weldability, and (iii) good corrosion resistance. At the beginning of this thesis, compositions with a common base but containing various additions of V or Nb with or without high N were designed and subjected to Gleeble simulations of different galvanizing(GI), galvannealing(GA) and supercooling processing. The results revealed the phase balance was strongly influenced by the different microalloying additions, while the strengths of each phase were somewhat less affected. Our research revealed that the amount of austenite formed during intercritical annealing can be strongly influenced by the annealing temperature and the pre-annealing conditions of the hot band (coiling temperature) and cold band (% cold reduction). In the late part of this thesis, the base composition was a low carbon steel which would exhibit good spot weldability. To this steel were added two levels of Cr and Mo for strengthening the ferrite and increasing the hardenability of intercritically formed austenite. Also, these steels were produced with and without the addition of vanadium in an effort to further increase the strength. Since earlier studies revealed a relationship between the nature of the starting cold rolled microstructure and the response to CGL processing, the variables of hot band coiling temperature and level of cold reduction prior to annealing were also studied. Finally, in an effort to increase strength and ductility of both the final sheet (general formability) and the sheared edges of cold punched holes (local formability), a new thermal path was developed that replaced the conventional GI ferrite-martensite microstructure with a new ferrite-martensite-tempered martensite and retained austenite microstructure. The new

Tandem on-line continuous separations for atomic spectroscopic indirect analysis: iodide determination by ICP-AES

International Nuclear Information System (INIS)

Garcia, A.M.; Sanchez Uria, J.E.; Sanz-Medel, A.; Quintero Ortega, M.C.; Bautista, J.C.

1992-01-01

A sensitive and selective indirect determination of iodide by inductively coupled plasma emission spectrometry (ICP-AES) based on the principle of tandem on-line continuous separations as an alternative means of introducing samples into plasmas is proposed. Iodide is continuously extracted as an ion-pair into xylene by mixing the sample with Hg(II) and dipyridil solutions. The organic phase (containing the analyte in [Hg(Dipy) 2 ]I 2 form) is on-line continuously mixed with NaBH 4 (in DMF) and acetic acid solutions. Mercury vapour continuously generated from this organic phase is separated in a classical U-type gas-liquid separation device. The system has been optimized for the continuous extraction of KI, for the direct generation of cold mercury vapour from xylene and for the final ICP-AES determination of mercury. The optimised method has been applied to the determination of iodide (detection limit 20 ng/ml of iodide) in table salt and in synthetic samples. Very good agreement between found and certified results was observed. The usefulness and convenience of such alternative sample chemical pretreatment/presentation to the ICP is thus demonstrated for indirect determinations to be carried out by atomic spectroscopy methods. (authors)

Annealing effects in solid-state track recorders

International Nuclear Information System (INIS)

Gold, R.; Roberts, J.H.; Ruddy, F.H.

1981-01-01

Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work

Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

International Nuclear Information System (INIS)

Javier-Ccallata, Henry; Filho, Luiz Tomaz; Sartorelli, Maria L.; Watanabe, Shigueo

2013-01-01

Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe 2+ and Fe 3+ . •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe 3+ . -- Abstract: Natural silicate mineral of pumpellyite, Ca 2 MgAl 2 (SiO 4 )(Si 2 O 7 )(OH) 2 ·(H 2 O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe 2+ and Fe 3+ . The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe 2+ → e − + Fe 3+ . On the other hand, EPR measurements reveal six lines of Mn 2+ , and satellites due to hyperfine interaction, superimposed on the signal of Fe 3+ around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe 3+ hides all Mn 2+ lines. The strong growth of this signal indicates that the transitions are due to Fe 3+ dipole–dipole interactions

A quasi-continuous observation of the α-transition of Fe1+xS by Moessbauer line tracking

International Nuclear Information System (INIS)

Mendoza Zelis, P.; Pasquevich, G. A.; Veiga, A.; Fernandez van Raap, M. B.; Sanchez, F. H.

2010-01-01

Moessbauer absorption line tracking methodology, under a constant velocity strategy, is used for a quasi-continuous observation of the α-transition on slightly non stoichiometric Fe 1+x S alloy. To this end, two strategies were applied: an intelligent absorption line tracking with a control algorithm that uses the data measured in the previous region to establish the position of the next partial spectral range; and a predetermined line tracking in which temperature evolution of a partial spectral region of interest (ROI) is programmed. The latter uses results from the former, in order to achieve a quasi-continuous partial spectral observation. These experiments clearly demonstrate that line tracking allows a more efficient use of the radioactive source, as the effort is concentrated in a partial region of the spectra from which the desired information can be obtained.

Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions

DEFF Research Database (Denmark)

Petersen, Dirch Hjorth; Lin, Rong; Hansen, Torben Mikael

2008-01-01

have been used to characterize the sheet resistance uniformity of millisecond laser annealed USJs. They verify, both experimentally and theoretically, that the probe pitch of a four-point probe can strongly affect the measured sheet resistance. Such effect arises from the sensitivity (or "spot size......In this comparative study, the authors demonstrate the relationship/correlation between macroscopic and microscopic four-point sheet resistance measurements on laser annealed ultra-shallow junctions (USJs). Microfabricated cantilever four-point probes with probe pitch ranging from 1.5 to 500 mu m......") of an in-line four-point probe. Their study shows the benefit of the spatial resolution of the micro four-point probe technique to characterize stitching effects resulting from the laser annealing process....

Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 1. Program overview. Final report

International Nuclear Information System (INIS)

Mager, T.R.

1983-01-01

An EPRI sponsored program was carried out by Westinghouse to determine the extent of fracture toughness recovery as a function of annealing time and temperature for neutron embrittlement sensitive reactor vessel material and to develop an optimal thermal anneal procedure for field applications. Program materials were three weldments fabricated by Combustion Engineering, Inc., from the same heat of A533 Grade B Class 1 plate material and the same heat of MnMoNi weld wire. The only variables were the target copper level and the welding flux which was Linde Grade 80 and Linde 0091. Weldments of 0.22, 0.36, and 0.41 wt % copper were produced. It was concluded from this study that excellent recovery of all properties could be achieved by annealing at 850 0 F (454 0 C) and above for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the rate which would have been expected had no anneal been performed. System limitations were identified for both wet and dry annealing methods

A market based active/reactive dispatch including transformer taps and reactor and capacitor banks using Simulated Annealing

International Nuclear Information System (INIS)

Gomes, Mario Helder; Saraiva, Joao Tome

2009-01-01

This paper describes an optimization model to be used by System Operators in order to validate the economic schedules obtained by Market Operators together with the injections from Bilateral Contracts. These studies will be performed off-line in the day before operation and the developed model is based on adjustment bids submitted by generators and loads and it is used by System Operators if that is necessary to enforce technical or security constraints. This model corresponds to an enhancement of an approach described in a previous paper and it now includes discrete components as transformer taps and reactor and capacitor banks. The resulting mixed integer formulation is solved using Simulated Annealing, a well known metaheuristic specially suited for combinatorial problems. Once the Simulated Annealing converges and the values of the discrete variables are fixed, the resulting non-linear continuous problem is solved using Sequential Linear Programming to get the final solution. The developed model corresponds to an AC version, it includes constraints related with the capability diagram of synchronous generators and variables allowing the computation of the active power required to balance active losses. Finally, the paper includes a Case Study based on the IEEE 118 bus system to illustrate the results that it is possible to obtain and their interest. (author)

Development of a supplemental surveillance program for reactor pressure vessel thermal annealing

International Nuclear Information System (INIS)

Server, W.L.; Rosinski, S.T.

1997-01-01

The technical decision to thermally anneal a nuclear reactor pressure vessel (RPV) depends upon the level of embrittlement in the RPV steels, the amount of recovery of fracture toughness properties expected from the anneal, and the rate of re-embrittlement after the vessel is placed back into service. The recovery of Charpy impact toughness properties after annealing can be estimated initially by using a recovery model developed using experimental measurements of recovery (such as that developed by Eason et al. for U.S. vessel materials). However, actual validation measurements on plant-specific archived vessel materials (hopefully in the existing surveillance program) are needed; otherwise, irradiated surrogate materials, essentially the same as the RPV steels or bounding in expected behavior, must be utilized. The efficient use of any of these materials requires a supplemental surveillance program focused at both recovery and reirradiation embrittlement. Reconstituted Charpy specimens and new surveillance capsules will most likely be needed as part of this supplemental surveillance program. A new version of ASTM E 509 has recently been approved which provides guidance on thermal annealing in general and specifically for the development of an annealing supplemental surveillance program. The post-anneal re-embrittlement properties are crucial for continued plant operation, and the use of a re-embrittlement model, such as the lateral shift approach, may be overly conservative. This paper illustrates the new ASTM E 509 Standard Guide methodology for an annealing supplemental surveillance program. As an example, the proposed program for the Palisades RPV beltline steels is presented which covers the time from annealing to the end of operating license and beyond, if license renewal is pursued. The Palisades nuclear power plant RPV was planned to be annealed in 1998, but that plant is currently being re-evaluated. The proposed anneal was planned to be conducted at a

Recent evaluation of 'wet' thermal annealing to resolve reactor pressure vessel embrittlement

International Nuclear Information System (INIS)

Server, W.L.; Biemiller, E.C.

1993-01-01

vessel could have continued to operate safely for at least one fuel cycle (and possibly more depending upon the degree of conservatism needed to satisfy regulators). The key elements for making this conclusion were: (1) there was approximately a 150 deg. F difference between the annealing and operating temperatures for the vessel (a key parameter), (2) there was a relatively high degree of damage in the vessel prior to annealing, and (3) the Yankee Rowe vessel materials were thought to have moderate to good recovery potential (based upon limited experimental data). For the materials in the Yankee Rowe vessel, a thermal anneal recovery of at least 40% was expected, and the lateral shift methodology for re-embrittlement after annealing was considered appropriate while maintaining at least a one sigma uncertainty similar to Regulatory Guide 1.99, Revision 2

Understanding the microwave annealing of silicon

Directory of Open Access Journals (Sweden)

Chaochao Fu

2017-03-01

Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness.

Science.gov (United States)

Ayyıldız, Simel; Soylu, Elif Hilal; Ide, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

2013-11-01

The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic substructures. The dentists should be familiar with the materials that are used in clinic for prosthodontics treatments.

Continuous determination of volatile products in anaerobic fermenters by on-line capillary gas chromatography

International Nuclear Information System (INIS)

Diamantis, V.; Melidis, P.; Aivasidis, A.

2006-01-01

Bio-ethanol and biogas produced during the anaerobic conversion of organic compounds has been a subject of great interest since the oil crisis of the 1970s. In ethanol fermentation and anaerobic treatment of wastewaters, end-product (ethanol) and intermediate-products (short-chain fatty acids, SCFA) cause inhibition that results in reduced process efficiency. Control of these constituents is of utmost importance for bioreactor optimization and process stability. Ethanol and SCFA can be detected with precision by capillary gas chromatography usually conducted in off-line measurements. In this work, an on-line monitoring and controlling system was developed and connected to the fermenter via an auto-sampling equipment, which could perform the feeding, filtration and dilution of the sample and final injection into the gas chromatograph through an automation-based programmed procedure. The sample was continuously pumped from the recycle stream of the bioreactor and treated using a microfiltration unit. The concentrate was returned to the reactor while the permeate was quantitatively mixed with an internal standard solution. The system comprised of a gas chromatograph with the flow cell and one-shot sampler and a PC with the appropriate software. The on-line measurement of ethanol and SCFA, directly from the liquid phase of an ethanol fermenter and a high-rate continuous mode anaerobic digester, was accomplished by gas chromatography. Also, this monitoring and controlling system was proved to be effective in the continuous fermentation of alcohol-free beer

Rapid thermal annealing of FePt and FePt/Cu thin films

Energy Technology Data Exchange (ETDEWEB)

Brombacher, Christoph

2011-01-10

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

Image-Based Airborne Sensors: A Combined Approach for Spectral Signatures Classification through Deterministic Simulated Annealing

Science.gov (United States)

Guijarro, María; Pajares, Gonzalo; Herrera, P. Javier

2009-01-01

The increasing technology of high-resolution image airborne sensors, including those on board Unmanned Aerial Vehicles, demands automatic solutions for processing, either on-line or off-line, the huge amountds of image data sensed during the flights. The classification of natural spectral signatures in images is one potential application. The actual tendency in classification is oriented towards the combination of simple classifiers. In this paper we propose a combined strategy based on the Deterministic Simulated Annealing (DSA) framework. The simple classifiers used are the well tested supervised parametric Bayesian estimator and the Fuzzy Clustering. The DSA is an optimization approach, which minimizes an energy function. The main contribution of DSA is its ability to avoid local minima during the optimization process thanks to the annealing scheme. It outperforms simple classifiers used for the combination and some combined strategies, including a scheme based on the fuzzy cognitive maps and an optimization approach based on the Hopfield neural network paradigm. PMID:22399989

Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

Energy Technology Data Exchange (ETDEWEB)

Javier-Ccallata, Henry, E-mail: henrysjc@gmail.com [Escuela de Ingeniería Electrónica y Telecomunicaciones, Universidad Alas Peruanas Filial Arequipa, Urb. D. A. Carrión G-14, J. L. Bustamante y Rivero, Arequipa (Peru); Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Filho, Luiz Tomaz [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil); Faculdade de Tecnologia e Ciências Exatas, Universidade São Judas Tadeu, Rua Taquari 546, São Paulo, SP (Brazil); Sartorelli, Maria L. [Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Watanabe, Shigueo [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil)

2013-09-15

Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe{sup 2+}and Fe{sup 3+}. •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe{sup 3+}. -- Abstract: Natural silicate mineral of pumpellyite, Ca{sub 2}MgAl{sub 2}(SiO{sub 4})(Si{sub 2}O{sub 7})(OH){sub 2}·(H{sub 2}O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe{sup 2+} and Fe{sup 3+}. The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe{sup 2+} → e{sup −} + Fe{sup 3+}. On the other hand, EPR measurements reveal six lines of Mn{sup 2+}, and satellites due to hyperfine interaction, superimposed on the signal of Fe{sup 3+} around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe{sup 3+} hides all Mn{sup 2+} lines. The strong growth of this signal indicates that the transitions are due to Fe{sup 3+} dipole–dipole interactions.

The influence of annealing atmosphere on the material properties of sol-gel derived SnO2:Sb films before and after annealing

International Nuclear Information System (INIS)

Jeng, Jiann-Shing

2012-01-01

SnO 2 films with and without Sb doping were prepared by the sol-gel spin-coating method. Material properties of the SnO 2 films with different Sb contents were investigated before and after annealing under O 2 or N 2 . When SnO 2 films are annealed under N 2 or O 2 , the resistivity decreases with increasing annealing temperature, which may be related to the increased crystallinity and reduced film defects. The intensity of SnO 2 peaks for both O 2 - and N 2 -annealed films increases as the annealing temperature increases. Small nodules are revealed on the surface of SnO 2 films after annealing in N 2 or O 2 atmospheres, and some voids are present on the surface of N 2 -annealed SnO 2 films. After doping with Sb, the resistivity of SnO 2 films after annealing in O 2 is greater than that of N 2 -annealed SnO 2 films. The surface morphology of SnO 2 films incorporating different molar ratios of Sb after annealing are similar to that of as-spun SnO 2 films with adding Sb. There were no voids found on the surfaces of N 2 -annealed SnO 2 :Sb films. In addition, the peak intensity of SnO 2 :Sb films after O 2 -annealing is higher than those films after N 2 -annealing. The chemical binding states and Hall mobility of the high-temperature annealed SnO 2 films without and with adding Sb are also related to the annealing atmospheres. This study discusses the connection among the material properties of the SnO 2 films with different Sb contents and how these properties are influenced by the Sb-doping concentration and the annealing atmospheres of SnO 2 films.

Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

International Nuclear Information System (INIS)

Xu, Yun-bo; Hu, Zhi-ping; Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing; Ma, De-gang; Misra, R.D.K.

2017-01-01

The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

Energy Technology Data Exchange (ETDEWEB)

Xu, Yun-bo [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Hu, Zhi-ping, E-mail: huzhiping900401@126.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Ma, De-gang [Tangshan Iron and Steel Company, Tangshan 063000, People' s Republic China (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States)

2017-03-14

The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

A quasi-continuous observation of the {alpha}-transition of Fe{sub 1+x}S by Moessbauer line tracking

Energy Technology Data Exchange (ETDEWEB)

Mendoza Zelis, P., E-mail: pmendoza@fisica.unlp.edu.ar; Pasquevich, G. A.; Veiga, A.; Fernandez van Raap, M. B.; Sanchez, F. H. [Universidad Nacional de La Plata, CONICET, Depto. de Fisica, Fac. Ciencias Exactas, Instituto de Fisica La Plata (Argentina)

2010-01-15

Moessbauer absorption line tracking methodology, under a constant velocity strategy, is used for a quasi-continuous observation of the {alpha}-transition on slightly non stoichiometric Fe{sub 1+x}S alloy. To this end, two strategies were applied: an intelligent absorption line tracking with a control algorithm that uses the data measured in the previous region to establish the position of the next partial spectral range; and a predetermined line tracking in which temperature evolution of a partial spectral region of interest (ROI) is programmed. The latter uses results from the former, in order to achieve a quasi-continuous partial spectral observation. These experiments clearly demonstrate that line tracking allows a more efficient use of the radioactive source, as the effort is concentrated in a partial region of the spectra from which the desired information can be obtained.

Influence of initial annealing on structure evolution and magnetic properties of 3.4% Si non-oriented steel during final annealing

Energy Technology Data Exchange (ETDEWEB)

Simões Mendanha Pedrosa, Josiane [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil); Costa Paolinelli, Sebastião da [Research Department Aperam South America, Praça Primeiro de Maio, 9, Timóteo MG-35180018 (Brazil); Barros Cota, André, E-mail: abcota@ufop.br [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil)

2015-11-01

The effect of the initial annealing on structure evolution and magnetic properties during the final annealing of a 3.4% Si non-oriented grain steel was evaluated. Half of the samples were submitted to initial annealing at 1030 °C before cold rolling and all samples were subjected to final annealing process at temperatures from 540 °C to 1100 °C. The magnetic induction and core loss in the final samples, the microstructure by optical microscopy and the crystallographic texture by X-ray diffraction and EBSD were evaluated. The results show that the samples without initial annealing presented better magnetic properties than the samples with initial annealing, due to the higher ratio between Eta fiber and Gamma fiber volume fractions (Eta/Gamma ratio) in their structure after final annealing. - Highlights: • Texture and magnetic properties of 3.4% Si non-oriented electrical steel were measured. • Without initial annealing, better texture and magnetic properties were obtained. • Good texture and magnetic properties are obtained with Steckel hot band structure.

Simulated annealing and circuit layout

NARCIS (Netherlands)

Aarts, E.H.L.; Laarhoven, van P.J.M.

1991-01-01

We discuss the problem of approximately sotvlng circuit layout problems by simulated annealing. For this we first summarize the theoretical concepts of the simulated annealing algorithm using Ihe theory of homogeneous and inhomogeneous Markov chains. Next we briefly review general aspects of the

Radiation annealing in cuprous oxide

DEFF Research Database (Denmark)

Vajda, P.

1966-01-01

Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

Pattern Laser Annealing by a Pulsed Laser

Science.gov (United States)

Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

1981-10-01

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

Annealing-induced Ge/Si(100) island evolution

International Nuclear Information System (INIS)

Zhang Yangting; Drucker, Jeff

2003-01-01

Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

Annealing behavior of alpha recoil tracks in phlogopite

International Nuclear Information System (INIS)

Gao Shaokai; Yuan Wanming; Dong Jinquan; Bao Zengkuan

2005-01-01

Alpha recoil tracks (ARTs) formed during the a-decay of U, Th as well as their daughter nuclei are used as a new dating method which is to some extent a complementarity of fission track dating due to its ability to determine the age of young mineral. ARTs can be observable under phase-contrast interference microscope through chemical etching. In order to study the annealing behavior of ARTs in phlogopite, two methods of annealing experiments were executed. Samples were annealed in the electronic tube furnace at different temperatures ranging from 250 degree C to 450 degree C in steps of 50 degree C. For any given annealing temperature, different annealing times were used until total track fading were achieved. It is found that ARTs anneal much more easily than fission tracks, the annealing ratio increase non-linearly with annealing time and temperature. Using the Arrhenius plot, an activation energy of 0.68ev is finally found for 100% removal of ARTs, which is less than the corresponding value for fission tracks (FTs). Through extending the annealing time to geological time, a much lower temperature range of the sample's cooling history can be got.

Reduced annealing temperatures in silicon solar cells

Science.gov (United States)

Weinberg, I.; Swartz, C. K.

1981-01-01

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Simulated annealing with constant thermodynamic speed

International Nuclear Information System (INIS)

Salamon, P.; Ruppeiner, G.; Liao, L.; Pedersen, J.

1987-01-01

Arguments are presented to the effect that the optimal annealing schedule for simulated annealing proceeds with constant thermodynamic speed, i.e., with dT/dt = -(v T)/(ε-√C), where T is the temperature, ε- is the relaxation time, C ist the heat capacity, t is the time, and v is the thermodynamic speed. Experimental results consistent with this conjecture are presented from simulated annealing on graph partitioning problems. (orig.)

Coherent Coupled Qubits for Quantum Annealing

Science.gov (United States)

Weber, Steven J.; Samach, Gabriel O.; Hover, David; Gustavsson, Simon; Kim, David K.; Melville, Alexander; Rosenberg, Danna; Sears, Adam P.; Yan, Fei; Yoder, Jonilyn L.; Oliver, William D.; Kerman, Andrew J.

2017-07-01

Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times limited primarily by the use of large persistent currents Ip. Here, we examine an alternative approach using qubits with smaller Ip and longer coherence times. We demonstrate tunable coupling, a basic building block for quantum annealing, between two flux qubits with small (approximately 50-nA) persistent currents. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

Science.gov (United States)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation

Energy Saving in Industrial Annealing Furnaces

Directory of Open Access Journals (Sweden)

Fatma ÇANKA KILIÇ

2018-03-01

Full Text Available In this study, an energy efficiency studies have been carried out in a natural gas-fired rolling mill annealing furnace of an industrial establishment. In this context, exhaust gas from the furnace has been examined in terms of waste heat potential. In the examinations that have been made in detail; waste heat potential was found as 3.630,31 kW. Technical and feasibility studies have been carried out to realize electricity production through an Organic Rankine Cycle (ORC system for evaluating the waste heat potential of the annealing furnace. It has been calculated that 1.626.378,88 kWh/year of electricity can be generated by using the exhaust gas waste heat of the annealing furnace through an ORC system to produce electric energy with a net efficiency of 16%. The financial value of this energy was determined as 436.032,18 TL/year and the simple repayment period of the investment was 8,12 years. Since the annealing period of the annealing furnace is 2800 hours/year, the investment has not been found to be feasible in terms of the feasibility studies. However, the investment suitability can be assured when the annealing furnace is operating at full capacity for 8,000 hours or more annually.

Magnetic losses reduction in grain oriented silicon steel by pulse and continuous fiber laser processing

Science.gov (United States)

Petryshynets, Ivan; Kováč, František; Puchý, Viktor; Šebek, Martin; Füzer, Ján; Kollár, Peter

2018-04-01

The present paper shows the impact of different laser scribing conditions on possible reduction of magnetic losses in grain oriented electrical steel sheets. The experimental Fe-3%Si steel was taken from industrial line after final box annealing. The surface of investigated steel was subjected to fiber laser processing using both pulse and continuous scribing regimes in order to generate residual thermal stresses inducing the magnetic domains structure refinement. The magnetic losses of experimental samples before and after individual laser scribing regimes were tested in AC magnetic field with 50Hz frequency and induction of 1.5T. The most significant magnetic losses reduction of 38% was obtained at optimized conditions of continuous laser scribing regime. A semi quantitative relationship has been found between the domain patterns and the used fiber laser processing.

An in situ study of the annealing behaviour of BiSCCO Ag tapes

DEFF Research Database (Denmark)

Frello, T.; Poulsen, H.F.; Andersen, L.G.

1999-01-01

The phase transformations and structural changes occurring during initial heating and annealing of an Ag-clad high-T-c superconducting tape of the (Bi, Pb)(2)Sr2Ca2Cu3Ox type are investigated. The annealing takes place in air at an operating temperature of 835 degrees C. Using x-ray diffraction...... continuously. We interpret these results as being related to a temperature-dependent solubility limit of Pb in 2212, leading to a substantial grain growth of the phase. Above 812 degrees C 2212 partly decomposes to form (Ca, Sr)(2)CuO3 and a liquid. At the operating temperature 2212 and (Ca, Sr)(2)CuO3 react...... the annealing the 2212 linewidth is constant, implying that there is neither strain nor finite-size broadening of the 2212 peaks during the transformation. This points to a transformation mechanism where only a few 2212 grains transform at a given time. Implications of these findings are discussed in relation...

Temperature Scaling Law for Quantum Annealing Optimizers.

Science.gov (United States)

Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

2017-09-15

Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

Science.gov (United States)

Bell, Robert T; Jacobs, Alan G; Sorg, Victoria C; Jung, Byungki; Hill, Megan O; Treml, Benjamin E; Thompson, Michael O

2016-09-12

A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

Infrared thermal annealing device

International Nuclear Information System (INIS)

Gladys, M.J.; Clarke, I.; O'Connor, D.J.

2003-01-01

A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

Effects of solvent evaporation conditions on solvent vapor annealed cylinder-forming block polymer thin films

Science.gov (United States)

Grant, Meagan; Jakubowski, William; Nelson, Gunnar; Drapes, Chloe; Baruth, A.

Solvent vapor annealing is a less time and energy intensive method compared to thermal annealing, to direct the self-assembly of block polymer thin films. Periodic nanostructures have applications in ultrafiltration, magnetic arrays, or other structures with nanometer dimensions, driving its continued interest. Our goal is to create thin films with hexagonally packed, perpendicular aligned cylinders of poly(lactide) in a poly(styrene) matrix that span the thickness of the film with low anneal times and low defect densities, all with high reproducibility, where the latter is paramount. Through the use of our computer-controlled, pneumatically-actuated, purpose-built solvent vapor annealing chamber, we have the ability to monitor and control vapor pressure, solvent concentration within the film, and solvent evaporation rate with unprecedented precision and reliability. Focusing on evaporation, we report on two previously unexplored areas, chamber pressure during solvent evaporation and the flow rate of purging gas aiding the evaporation. We will report our exhaustive results following atomic force microscopy analysis of films exposed to a wide range of pressures and flow rates. Reliably achieving well-ordered films, while occurring within a large section of this parameter space, was correlated with high-flow evaporation rates and low chamber pressures. These results have significant implications on other methods of solvent annealing, including ``jar'' techniques.

Microstructure and mechanical properties after annealing of equal-channel angular pressed interstitial-free steel

International Nuclear Information System (INIS)

Hazra, Sujoy S.; Pereloma, Elena V.; Gazder, Azdiar A.

2011-01-01

The evolution of microstructure, microtexture and mechanical properties during isothermal annealing of an ultrafine-grained interstitial-free steel after eight passes of route B C room temperature equal-channel angular pressing (ECAP) was studied. The microstructure and microtexture were characterized by electron back-scattering diffraction, and mechanical properties were assessed by shear punch and uniaxial tensile testing. Homogeneous coarsening via continuous recrystallization of the ECAP microstructure is accompanied by minor changes in the ∼63% high-angle boundary population and a sharpening of the original ECAP texture. This is followed by abnormal growth during the final stages of softening due to local growth advantages. Linear correlations between shear and tensile data were established for yield, ultimate strength and total elongation. After yield, the changes in uniaxial tensile behaviour from geometrical softening after ECAP to load drop, Lueders banding and continuous yielding after annealing is attributable to a coarsening of the microstructure.

Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

2010-01-01

This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C i O i ), and carbon interstitial-carbon substitutional (C i C s ) pairs as well as the formation temperature of vacancy-two oxygen (VO 2 ) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C i O i and C i C s defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO 2 complexes are substantially lowered at Ge concentrations larger than 1x10 19 cm -3 . The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C i O i and C i C s species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O i →VO 2 and VO+Si I →O i , we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si I ) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO 2 complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si I →O i .

Boosting quantum annealer performance via sample persistence

Science.gov (United States)

Karimi, Hamed; Rosenberg, Gili

2017-07-01

We propose a novel method for reducing the number of variables in quadratic unconstrained binary optimization problems, using a quantum annealer (or any sampler) to fix the value of a large portion of the variables to values that have a high probability of being optimal. The resulting problems are usually much easier for the quantum annealer to solve, due to their being smaller and consisting of disconnected components. This approach significantly increases the success rate and number of observations of the best known energy value in samples obtained from the quantum annealer, when compared with calling the quantum annealer without using it, even when using fewer annealing cycles. Use of the method results in a considerable improvement in success metrics even for problems with high-precision couplers and biases, which are more challenging for the quantum annealer to solve. The results are further enhanced by applying the method iteratively and combining it with classical pre-processing. We present results for both Chimera graph-structured problems and embedded problems from a real-world application.

Continuous recrystallization and mechanical properties of a C45 steel after high pressure torsion

Energy Technology Data Exchange (ETDEWEB)

Haddad, Mike; Fecht, Hans [Institute of Micro and Nanomaterials, University of Ulm, Ulm, Gemany (Germany); Institute of Nanotechnology, Karlsruhe Institut of Technology, Karlsruhe (Germany); Ning, Jiang Li; Ivanisenko, Yulia [Institute of Nanotechnology, Karlsruhe Institut of Technology, Karlsruhe (Germany); Hoermann, Ute [Central Facility for Electron Microscopy, University of Ulm, Ulm (Germany); Murashkin, Maxim [IPAM, Ufa State Aviation Technical University, Ufa (Russian Federation)

2011-07-01

An initial microstructure of C45 steel (Fe, 0.42-0.5% C, 0.5-0.8% Mn, <0.4% Si, <0.045% S, 0.045% P * All in wt%) was modified from ferritic-pearlitic to bainitic through heating at 900 C for 1 hour and quenching in a lead bath at 500 C for 30 min. The steel was processed by High Pressure Torsion (HPT) at room temperature for 3 and 5 rotations, which led to an ultrafine or nano-scale grained structure. Then the material was annealed at 400 C and 450 C for two hours, respectively. TEM observation showed that continuous recrystallization occurred during the annealing. The yield strength and elongation after annealing at 400 C and 450 C were 1277 MPa, 3%, and 1100 MPa, 11%, respectively. Compared with the mechanical properties before annealing, it was revealed that the continuous recrystallization during annealing led to an enhancement of the ductility, but without sacrificing much of the strength. Funding by the Deutsche Forschungsgemeinschaft and Russian Foundation for basic research is gratefully aknowledged.

Rapid thermal annealing of phosphorus implanted silicon

International Nuclear Information System (INIS)

Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

1985-01-01

Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

Annealed n-vector p spin model

International Nuclear Information System (INIS)

Taucher, T.; Frankel, N.E.

1992-01-01

A disordered n-vector model with p spin interactions is introduced and studied in mean field theory for the annealed case. The complete solutions for the cases n = 2 and n = 3, is presented and explicit order parameter equations is given for all the stable solutions for arbitrary n. For all n and p was found on stable high temperature phase and one stable low temperature phase. The phase transition is of first order. For n = 2, it is continuous in the order parameters for p ≤ 4 and has a jump discontinuity in the order parameters if p > 4. For n = 3, it has a jump discontinuity in the order parameters for all p. 11 refs., 4 figs

On the Processing of Martensitic Steels in Continuous Galvanizing Lines: Part II

Science.gov (United States)

Song, Taejin; Kwak, Jaihyun; de Cooman, B. C.

2012-01-01

The conventional continuous hot-dip galvanizing (GI) and galvannealing (GA) processes can be applied to untransformed austenite to produce Zn and Zn-alloy coated low-carbon ultra-high-strength martensitic steel provided specific alloying additions are made. The most suitable austenite decomposition behavior results from the combined addition of boron, Cr, and Mo, which results in a pronounced transformation bay during isothermal transformation. The occurrence of this transformation bay implies a considerable retardation of the austenite decomposition in the temperature range below the bay, which is close to the stages in the continuous galvanizing line (CGL) thermal cycle related to the GI and GA processes. After the GI and GA processes, a small amount of granular bainite, which consists of bainitic ferrite and discrete islands of martensite/austenite (M/A) constituents embedded in martensite matrix, is present in the microstructure. The ultimate tensile strength (UTS) of the steel after the GI and GA cycle was over 1300 MPa, and the stress-strain curve was continuous without any yielding phenomena.

Computational Multiqubit Tunnelling in Programmable Quantum Annealers

Science.gov (United States)

2016-08-25

ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

Stored energy and annealing behavior of heavily deformed aluminium

DEFF Research Database (Denmark)

Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

2012-01-01

It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

Improving Nanofiber Membrane Characteristics and Membrane Distillation Performance of Heat-Pressed Membranes via Annealing Post-Treatment

Directory of Open Access Journals (Sweden)

Minwei Yao

2017-01-01

Full Text Available Electrospun membranes are gaining interest for use in membrane distillation (MD due to their high porosity and interconnected pore structure; however, they are still susceptible to wetting during MD operation because of their relatively low liquid entry pressure (LEP. In this study, post-treatment had been applied to improve the LEP, as well as its permeation and salt rejection efficiency. The post-treatment included two continuous procedures: heat-pressing and annealing. In this study, annealing was applied on the membranes that had been heat-pressed. It was found that annealing improved the MD performance as the average flux reached 35 L/m2·h or LMH (>10% improvement of the ones without annealing while still maintaining 99.99% salt rejection. Further tests on LEP, contact angle, and pore size distribution explain the improvement due to annealing well. Fourier transform infrared spectroscopy and X-ray diffraction analyses of the membranes showed that there was an increase in the crystallinity of the polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP membrane; also, peaks indicating the α phase of polyvinylidene fluoride (PVDF became noticeable after annealing, indicating some β and amorphous states of polymer were converted into the α phase. The changes were favorable for membrane distillation as the non-polar α phase of PVDF reduces the dipolar attraction force between the membrane and water molecules, and the increase in crystallinity would result in higher thermal stability. The present results indicate the positive effect of the heat-press followed by an annealing post-treatment on the membrane characteristics and MD performance.

Global warming: Temperature estimation in annealers

Directory of Open Access Journals (Sweden)

Jack Raymond

2016-11-01

Full Text Available Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper we evaluate several methods for determining a useful operational temperature range for annealers. We show that, even where distributions deviate from the Boltzmann distribution due to ergodicity breaking, these estimates can be useful. We introduce the concepts of local and global temperatures that are captured by different estimation methods. We argue that for practical application it often makes sense to analyze annealers that are subject to post-processing in order to isolate the macroscopic distribution deviations that are a practical barrier to their application.

Origin of reverse annealing effect in hydrogen-implanted silicon

Energy Technology Data Exchange (ETDEWEB)

Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

2009-01-01

In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

Growth mechanism of extension twin variants during annealing of pure magnesium: An ‘ex situ’ electron backscattered diffraction investigation

Energy Technology Data Exchange (ETDEWEB)

Sabat, R.K. [Department of Materials Engineering, IISc, Bangalore 560012 (India); Panda, D. [Department of Metallurgical & Materials Engineering, NIT, Rourkela 769008 (India); Sahoo, S.K., E-mail: sursahoo@gmail.com [Department of Metallurgical & Materials Engineering, NIT, Rourkela 769008 (India)

2017-04-15

Pure magnesium was subjected to plastic deformation through CSM (continuous stiffness measurement) indentation followed by annealing at 200 °C for 30 min. Nucleation of no new grains was observed neither at the twin–twin intersections nor at the multiple twin variants of a grain after annealing. Significant growth of off-basal twin orientation compared to basal twin orientation was observed in the sample after annealing and is attributed to the partial coherent nature of twin boundary in the later case. Further, growth of twins was independent of the strain distribution between parent and twinned grains. - Highlights: • An ‘ex situ’ EBSD of pure Mg during annealing was investigated. • Nucleation of no new grains was observed. • Significant growth of off-basal twin orientation was observed. • Growth of twins may be attributed to the partial coherent nature of twin boundary.

Magnetic losses reduction in grain oriented silicon steel by pulse and continuous fiber laser processing

Directory of Open Access Journals (Sweden)

Ivan Petryshynets

2018-04-01

Full Text Available The present paper shows the impact of different laser scribing conditions on possible reduction of magnetic losses in grain oriented electrical steel sheets. The experimental Fe-3%Si steel was taken from industrial line after final box annealing. The surface of investigated steel was subjected to fiber laser processing using both pulse and continuous scribing regimes in order to generate residual thermal stresses inducing the magnetic domains structure refinement. The magnetic losses of experimental samples before and after individual laser scribing regimes were tested in AC magnetic field with 50Hz frequency and induction of 1.5T. The most significant magnetic losses reduction of 38% was obtained at optimized conditions of continuous laser scribing regime. A semi quantitative relationship has been found between the domain patterns and the used fiber laser processing.

Extrapolation of zircon fission-track annealing models

International Nuclear Information System (INIS)

Palissari, R.; Guedes, S.; Curvo, E.A.C.; Moreira, P.A.F.P.; Tello, C.A.; Hadler, J.C.

2013-01-01

One of the purposes of this study is to give further constraints on the temperature range of the zircon partial annealing zone over a geological time scale using data from borehole zircon samples, which have experienced stable temperatures for ∼1 Ma. In this way, the extrapolation problem is explicitly addressed by fitting the zircon annealing models with geological timescale data. Several empirical model formulations have been proposed to perform these calibrations and have been compared in this work. The basic form proposed for annealing models is the Arrhenius-type model. There are other annealing models, that are based on the same general formulation. These empirical model equations have been preferred due to the great number of phenomena from track formation to chemical etching that are not well understood. However, there are two other models, which try to establish a direct correlation between their parameters and the related phenomena. To compare the response of the different annealing models, thermal indexes, such as closure temperature, total annealing temperature and the partial annealing zone, have been calculated and compared with field evidence. After comparing the different models, it was concluded that the fanning curvilinear models yield the best agreement between predicted index temperatures and field evidence. - Highlights: ► Geological data were used along with lab data for improving model extrapolation. ► Index temperatures were simulated for testing model extrapolation. ► Curvilinear Arrhenius models produced better geological temperature predictions

STUDY OF TRANSMISSION LINES EFFECT ON THE SYSTEM OPERATIONON OF CONTINUOUS AUTOMATIC CAB SIGNALLING

Directory of Open Access Journals (Sweden)

O. O. Hololobova

2014-10-01

Full Text Available Purpose. To conduct an effect research of the electromagnetic field of high-voltage transmission lines (HVTL (750 kV, 50 Hz on the track circuits and continuous automatic cab signalling (CACS with a signal current of 50 Hz in the areas of convergence and intersection with the transmission lines and to propose possible methods to improve noise immunity of CACS. Methodology. The measurements were performed both by means of car-laboratory and directly on rail lines. During the study the electric field strength in the range of industrial frequency directly under the transmission lines and at the distance from it to the railway lines was measured, as well as the time dependence of CACS codes with signal current frequency of 50 Hz directly under the transmission lines and at a distance from it in the absence of the train and its passing. Findings. The root causes analysis of CACS faults and failures was carried out. The effect of the electromagnetic field of high-voltage transmission lines (750 kV, 50 Hz on the track circuit and CACS with signal current of 50 Hz in the areas of convergence and intersection with the transmission line was investigated. Possible methods to improve noise immunity of CACS were considered. Originality. The effect research of transmission lines (750 kV on the operation of the automatic cab signalling on spans Prishib-Burchatsk and Privolnoye-Yelizarovo, Pridneprovsk railway in places of oblique railroads crossing and transmission lines (750 kV, 50 Hz was conducted. Electric field strength in the range of industrial frequency directly under the transmission lines and at a distance from it to the railway line, as well as the time dependences of ALSN codes with signal current frequency of 50 Hz directly under the transmission lines and at a distance from it in the absence of the train and as its passing were measured. It was found that CACS codes in track circuits under transmission lines are strongly distorted, as strength

Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 2. Detailed technical description of the work. Final report

International Nuclear Information System (INIS)

Mager, T.R.

1982-11-01

Program materials were three weldments fabricated from A533 Grade B class 1 plate material and Mn Mo Ni weld wire. Specimens fabricated from the three submerged arc weldments included Type A Charpy V-notch impact, small size tensile, and 1/2T compact tension specimens. After encapsulation, the specimens were irradiated at the UVAR to two fluence levels, 8 x 10 18 n/cm 2 and 1.5 x 10 19 n/cm 2 (E > 1 MeV). Specimens were subjected to sequences of irradiation and anneals and then tested. Metallurgial/mechanistic analyses were also performed. It was concluded that excellent recovery of all properties could be achieved by annealing at greater than or equal to 850 0 F (454 0 C) for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the expected rate. Several drawbacks were identified for wet thermal annealing. A conceptual dry in-situ thermal annealing procedure was developed for thermal annealing embrittled reactor vessels

Mechanical properties and annealing texture of zirconium sheets

International Nuclear Information System (INIS)

Hanif-ur-Rehman; Khawaja, F.A.

1996-01-01

Mechanical properties like yield strength (YS), ultimate tensile strength(UTS), percentage elongation and annealing texture has been studied in sheets of commercially pure zirconium. The YS and UTS decrease as a function of annealing temperature up to 600 V, but both quantities have maximum value in sample annealed at 800 deg. C. The percentage elongation decreased with increase in annealing temperature up to 600 deg. C. A slight decrease and minimum value of percentage elongation was observed at 650 and 800 C respectively. The texture development in the annealed samples has been studied by the X-ray diffraction method. The sampled annealed at 800 deg. C showed a texture component (0001) [01 bar 10] with orientation density of about 8 times random, while the samples annealed at 600,650 and 700 deg. C showed a texture component (0001)[2 bar 110] with orientation density of about 5 times random. Thus it is concluded, that the texture component (0001)[2 bar 110] and (0001)[01 bar 10] at 650 and 800 geg. C respectively, may be the responsible for the increase in YS and UTS and decrease in percentage elongation at these temperatures. (author)

Annealing of KDP crystals in vacuum and under pressure

International Nuclear Information System (INIS)

Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

1997-01-01

The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Selective molecular annealing: in situ small angle X-ray scattering study of microwave-assisted annealing of block copolymers.

Science.gov (United States)

Toolan, Daniel T W; Adlington, Kevin; Isakova, Anna; Kalamiotis, Alexis; Mokarian-Tabari, Parvaneh; Dimitrakis, Georgios; Dodds, Christopher; Arnold, Thomas; Terrill, Nick J; Bras, Wim; Hermida Merino, Daniel; Topham, Paul D; Irvine, Derek J; Howse, Jonathan R

2017-08-09

Microwave annealing has emerged as an alternative to traditional thermal annealing approaches for optimising block copolymer self-assembly. A novel sample environment enabling small angle X-ray scattering to be performed in situ during microwave annealing is demonstrated, which has enabled, for the first time, the direct study of the effects of microwave annealing upon the self-assembly behavior of a model, commercial triblock copolymer system [polystyrene-block-poly(ethylene-co-butylene)-block-polystyrene]. Results show that the block copolymer is a poor microwave absorber, resulting in no change in the block copolymer morphology upon application of microwave energy. The block copolymer species may only indirectly interact with the microwave energy when a small molecule microwave-interactive species [diethylene glycol dibenzoate (DEGDB)] is incorporated directly into the polymer matrix. Then significant morphological development is observed at DEGDB loadings ≥6 wt%. Through spatial localisation of the microwave-interactive species, we demonstrate targeted annealing of specific regions of a multi-component system, opening routes for the development of "smart" manufacturing methodologies.

Estimating continuous floodplain and major river bed topography mixing ordinal coutour lines and topographic points

Science.gov (United States)

Bailly, J. S.; Dartevelle, M.; Delenne, C.; Rousseau, A.

2017-12-01

Floodplain and major river bed topography govern many river biophysical processes during floods. Despite the grow of direct topographic measurements from LiDARS on riverine systems, it still room to develop methods for large (e.g. deltas) or very local (e.g. ponds) riverine systems that take advantage of information coming from simple SAR or optical image processing on floodplain, resulting from waterbodies delineation during flood up or down, and producing ordered coutour lines. The next challenge is thus to exploit such data in order to estimate continuous topography on the floodplain combining heterogeneous data: a topographic points dataset and a located but unknown and ordered contourline dataset. This article is comparing two methods designed to estimate continuous topography on the floodplain mixing ordinal coutour lines and continuous topographic points. For both methods a first estimation step is to value each contourline with elevation and a second step is next to estimate the continuous field from both topographic points and valued contourlines. The first proposed method is a stochastic method starting from multigaussian random-fields and conditional simualtion. The second is a deterministic method based on radial spline fonction for thin layers used for approximated bivariate surface construction. Results are first shown and discussed from a set of synoptic case studies presenting various topographic points density and topographic smoothness. Next, results are shown and discuss on an actual case study in the Montagua laguna, located in the north of Valparaiso, Chile.

Annealing and thickness effects on magnetic properties of Co2FeAl alloy films

Science.gov (United States)

Wang, Ke; Xu, Zhan; Ling, Fujin; Wang, Yahong; Dong, Shuo

2018-03-01

Co2FeAl (CFA) films in a wide thickness range between 2 and 100 nm are sputtered at room temperature. Perpendicular magnetic anisotropy (PMA) is achieved in the annealed structure of Pd/CFA/MgO with CFA thickness ranging between 2.3 and 4.9 nm. PMA as high as 2 × 106 erg/cm3 is demonstrated in the structures annealed in the temperature range between 300 and 350 °C. Positive contributions to the PMA made by the interfaces of Pd/CFA and CFA/MgO are identified. For the as-deposited structure of MgO/CFA/Ta with thick CFA alloy up to 5 nm or above a high effective saturation magnetization of 983.9 ± 30.1 emu/cc is derived from the fitting and an in-plane uniaxial magnetic anisotropy of 104 erg/cm3 in magnitude is revealed by angular dependent magnetic measurements. In addition to the increase in saturation magnetization, a fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure confirmed by X-ray diffraction measurements. Out results provide some useful information for the design of the CFA-based magnetoelectronic devices.

Annealed star-branched polyelectrolytes in solution

NARCIS (Netherlands)

Klein Wolterink, J.; Male, van J.; Cohen Stuart, M.A.; Koopal, L.K.; Zhulina, E.B.; Borisov, O.V.

2002-01-01

Equilibrium conformations of annealed star-branched polyelectrolytes (polyacids) are calculated with a numerical self-consistent-field (SCF) model. From the calculations we obtain also the size and charge of annealed polyelectrolyte stars as a function of the number of arms, pH, and the ionic

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

Science.gov (United States)

Weinberg, I.; Swartz, C. K.

1980-01-01

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-08-31

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

International Nuclear Information System (INIS)

Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-01-01

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

International Nuclear Information System (INIS)

Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

2007-01-01

Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

Temperature distribution study in flash-annealed amorphous ribbons

International Nuclear Information System (INIS)

Moron, C.; Garcia, A.; Carracedo, M.T.

2003-01-01

Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

STRUCTURAL AND TECHNOLOGICAL ASPECTS OF DECREASE IN WIRE ANNEALING AT A TWIST OF A HIGH-STRENGTH METAL CORD

Directory of Open Access Journals (Sweden)

V. Р. Fetisov

2016-01-01

Full Text Available Deformation by drawing with the raised share of the squeezing tension and application of additional deformation with small degrees in the line of a drawing camp allow to minimize a wire annealing of a cold-deformed wire during a twist of a highstrength metal cord.

EFFECT OF DEW POINT OF ATMOSPHERE OF CGL’S ANNEALING FURNACES ON THE QUALITY OF GA COATING ON BAKE HARDENABLE STEEL

Directory of Open Access Journals (Sweden)

Juliana Porto Guimarães

2013-10-01

Full Text Available The strip steel surface condition after continuous annealing of strip is extremely important to the quality of galvannealed coating (GA. The presence of oxides or precipitated can affect the reactions at the coating/substrate interface and decrease the zinc wettability on the steel surface, leading to various defects in the final product. To avoid oxidation of the material during continuous annealing, a protective atmosphere is used in the furnaces. Despite this atmosphere, it is possible the selective oxidation or precipitation of second phase particles, being the dew point of atmosphere one of the leading factors to reduce this occurrence. This study aims to evaluate the effect of the dew point on the quality of GA coatings applied to a bake hardenable steel. The continuous annealing under dew points of –60°C, 30°C and 0°C, as well as hot dip galvanizing, were performed in a Hot Dip Process Simulator. It is found that the dew point has a decisive influence on the amount, distribution and type of oxides formed, and the condition of –30°C provided the coating with less failures and better adhesion.

Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

Science.gov (United States)

Londos, C. A.; Sarlis, N. V.; Fytros, L. G.

1998-10-01

This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm-1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm-1) and VO2 (887 cm-1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm-1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects.

Plasticity margin recovery during annealing after cold deformation

International Nuclear Information System (INIS)

Bogatov, A.A.; Smirnov, S.V.; Kolmogorov, V.L.

1978-01-01

Restoration of the plasticity margin in steel 20 after cold deformation and annealing at 550 - 750 C and soaking for 5 - 300 min was investigated. The conditions of cold deformation under which the metal acquires microdefects unhealed by subsequent annealing were determined. It was established that if the degree of utilization of the plasticity margin is psi < 0.5, the plasticity margin in steel 20 can be completely restored by annealing. A mathematical model of restoration of the plasticity margin by annealing after cold deformation was constructed. A statistical analysis showed good agreement between model and experiment

Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

OpenAIRE

Tanaka, Shu; Tamura, Ryo

2012-01-01

Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

Effect of annealing conditions on the molecular properties and wetting of viscoelastic bitumen substrates by liquids

Directory of Open Access Journals (Sweden)

Salomé dos Santos

2017-01-01

Full Text Available Typically, in the production of asphalt concrete, bitumen and mineral aggregates are heated and mixed at temperatures above 100 °C. After the mixing process bitumen ideally coats the mineral aggregates and remains in the form of thin films. Because bitumen is highly temperature sensitive, the study of its properties in terms of chemistry, microstructure and rheology as a function of different annealing conditions is very relevant. The resultant molecular properties have a direct correlation to bitumen macroscopic response to liquids such as water, which is of extreme relevance to the understanding of the detrimental effect of water on asphalt pavements. The wetting characteristics play a crucial role on the extension of detachment of bitumen from the mineral aggregates when asphalt is exposed to wet conditions. Therefore, in this work, the effect of the annealing temperature and cooling history on the chemistry, microstructure and wetting of bitumen films was studied. Crystalline microstructures were identified in bulk and on the surface of the bitumen films. Larger crystals presenting higher crystallinity degree were identified when the annealed bitumen films were cooled slowly. Moreover, higher annealing temperatures increased the oxidation level. The change of the rheological properties due to the alterations of the annealing conditions produced changes in the wetting characteristics. For instance, the advancing motion of a liquid drop on the viscoelastic bitumen substrate presented an intermittent behaviour due to the deformation of bitumen at the liquid-bitumen-air contact line. Consequently, changes in the contact angles were also observed. Keywords: Bitumen, Crystallization, Oxidation, Advancing contact angle, Wetting

The influence of annealing on manganese implanted GaAs films

International Nuclear Information System (INIS)

Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

OpenAIRE

Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

2008-01-01

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

Optical scattering characteristic of annealed niobium oxide films

International Nuclear Information System (INIS)

Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

2005-01-01

Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

Science.gov (United States)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing

Energy Technology Data Exchange (ETDEWEB)

Chung, Chen-Yang; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Greene, Raymond G. [Corning Incorporated, Corning, New York 14831 (United States)

2015-03-23

Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

Modelling the behaviour of intergranular fission gas during out-of-pile annealing

International Nuclear Information System (INIS)

Valin, S.; Mocellin, A.; Eminet, G.; Ravel, S.

2002-01-01

Standard UO 2 fuel irradiated in a commercial PWR (burn-up: 14 GWd/t u ) and hyper-stoichiometric large-grained fuel irradiated in an experimental reactor (burn-up: 9 GWd/t u ) were submitted to out-of-pile annealing treatments under sweeping helium. The 85 Kr release was continuously monitored during the annealing experiments, with temperatures ranging from 1 400 to 1 760 deg C. The burst release was not systematically observed during the heating ramp but did sometimes appear during the isothermal period following the ramp. A model based on microstructural observations was developed to explain the experimental results. The release was shown to depend on gas diffusion towards grain boundaries and on temporary gas trapping in grain boundary bubbles. The gas saturation on grain boundaries, leading to release, depends on their crystallographic orientation. (authors)

An investigation of the parameters affecting continuous on-line neutron activation analysis and its application to process control

International Nuclear Information System (INIS)

Boswell, C.

1977-03-01

A system analysis was made and a description was given of on-line continuous activation analysis. The suitability of the various languages available on the Burroughs B6700 computer for simulation of such systems was assessed. A programme was written in the selected languages to incorporate facilities for specifying the geometry of both activation and detector cells and of the delay line linking the two

Implantation annealing in GaAs by incoherent light

International Nuclear Information System (INIS)

Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

1983-01-01

Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

Improvement on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

Energy Technology Data Exchange (ETDEWEB)

Esakky, Papanasam, E-mail: papanasamte@gmail.com; Kailath, Binsu J

2017-08-15

Highlights: • Post deposition annealing (PDA) and post metallization annealing (PMA) on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors. • Post deposition N{sub 2}O plasma annealing inhibits crystallization of HfO{sub 2} during high temperature annealing. • Plasma annealing followed by RTA in N{sub 2} results in formation of hafnium silicate at the HfO{sub 2}-SiC interface. • PDA reduces interface state density (D{sub it}) and gate leakage current density (J{sub g}) by order. • PMA in forming gas for 40 min results in better passivation and reduces D{sub it} by two orders and J{sub g} by thrice. - Abstract: HfO{sub 2} as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO{sub 2}/SiC capacitors offer higher sensitivity than SiO{sub 2}/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO{sub 2}/SiC interface. Effect of post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO{sub 2}/SiC MIS capacitors are reported in this work. N{sub 2}O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N{sub 2} result in formation of Hf silicate at the HfO{sub 2}/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO{sub 2}/SiC capacitors.

Laser annealing of ion implanted silicon

International Nuclear Information System (INIS)

White, C.W.; Narayan, J.; Young, R.T.

1978-11-01

The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

Study of annealing effects in Al–Sb bilayer thin films

Indian Academy of Sciences (India)

There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

Solid-state dewetting of continuous thin platinum coatings

Energy Technology Data Exchange (ETDEWEB)

Hanief, N. [University of Cape Town, Private Bag X3, Rondebosch 7701 (South Africa); Topić, M.; Pineda-Vargas, C. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West (South Africa)

2015-11-15

Thermal stability of coatings is of crucial importance for reliability of electronic devices operating at high temperature. Thus, we investigated the Cr–Pt system where a thin platinum coating of 0.1 μm was deposited on chromium substrate and annealed at 1000 °C for 8 h. The scanning electron microscope (SEM) showed that a continuous and uniformly deposited Pt coating experienced the formation of “islands” after annealing. The grain-boundary grooving, dewetting and agglomeration were the main mechanisms of degradation of thermally annealed coatings. Results by μ-PIXE (particle-induced X-ray emission) and transmission electron microscope (TEM) showed the presence of Cr{sub 3}Pt phase in “islands” and the coating thickness was approximately 0.5 μm. The surrounding regions were left uncovered due to coating agglomeration at the expense of initially deposited coating.

Finite-time thermodynamics and simulated annealing

International Nuclear Information System (INIS)

Andresen, B.

1989-01-01

When the general, global optimization technique simulated annealing was introduced by Kirkpatrick et al. (1983), this mathematical algorithm was based on an analogy to the statistical mechanical behavior of real physical systems like spin glasses, hence the name. In the intervening span of years the method has proven exceptionally useful for a great variety of extremely complicated problems, notably NP-problems like the travelling salesman, DNA sequencing, and graph partitioning. Only a few highly optimized heuristic algorithms (e.g. Lin, Kernighan 1973) have outperformed simulated annealing on their respective problems (Johnson et al. 1989). Simulated annealing in its current form relies only on the static quantity 'energy' to describe the system, whereas questions of rate, as in the temperature path (annealing schedule, see below), are left to intuition. We extent the connection to physical systems and take over further components from thermodynamics like ensemble, heat capacity, and relaxation time. Finally we refer to finite-time thermodynamics (Andresen, Salomon, Berry 1984) for a dynamical estimate of the optimal temperature path. (orig.)

Annealing of Al implanted 4H silicon carbide

International Nuclear Information System (INIS)

Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

2006-01-01

Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

2014-12-28

We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

Burst annealing of high temperature GaAs solar cells

Science.gov (United States)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Burst annealing of high temperature GaAs solar cells

International Nuclear Information System (INIS)

Brothers, P.R.; Horne, W.E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

Science.gov (United States)

Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

2018-04-01

We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

Effect of air annealing on the color center in Yb:Y3Al5O12 transparent ceramics with MgO as sintering additive

Science.gov (United States)

Lu, Zhongwen; Lu, Tiecheng; Wei, Nian; Zhang, Wei; Ma, Benyuan; Qi, Jianqi; Guan, Yongbing; Chen, Xingtao; Wu, Huajun; Zhao, Yu

2015-09-01

High quality Yb:Y3Al5O12 (YAG) transparent ceramics were fabricated by vacuum sintering with MgO as sintering aids. The Yb:YAG samples were annealed at 1250-1450 °C for 20 h in air. The experimental results showed that the transparency of Yb:YAG samples declined markedly with the annealing temperatures of 1250-1450 °C. The samples became increasingly orange-yellow in color with the increase of annealing temperature. The potential reasons of discoloration were discussed for the first time. It was attributed to the complex color center [Mg2+F+] formed during the annealing, which was evidenced by optical absorption in the range of 300-500 nm wavelength and the presence of an electron spin resonance (ESR) line at g = 1.9806. The formation mechanism of the complex color center was explained in detail. The complex color center can be eliminated after post-HIP (hot isostatic pressing). And by air annealing and post-HIP, the transmittance of the samples increased from 80.3% to 83.4%.

Formation of oxygen related donors in step-annealed CZ–silicon

Indian Academy of Sciences (India)

The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (c). Oxygen and carbon both accelerate thermal ...

A note on simulated annealing to computer laboratory scheduling ...

African Journals Online (AJOL)

The concepts, principles and implementation of simulated Annealing as a modem heuristic technique is presented. Simulated Annealing algorithm is used in solving real life problem of Computer Laboratory scheduling in order to maximize the use of scarce and insufficient resources. KEY WORDS: Simulated Annealing ...

Improved perovskite phototransistor prepared using multi-step annealing method

Science.gov (United States)

Cao, Mingxuan; Zhang, Yating; Yu, Yu; Yao, Jianquan

2018-02-01

Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm2V-1s-1 for holes (electrons), which increases to 1.01 (0.54) cm2V-1s-1 for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 μs. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

Science.gov (United States)

Peres, M.; Lorenz, K.; Alves, E.; Nogales, E.; Méndez, B.; Biquard, X.; Daudin, B.; Víllora, E. G.; Shimamura, K.

2017-08-01

β-Ga2O3 bulk single crystals were doped by ion implantation at temperatures from room temperature to 1000 °C, using a 300 keV Europium beam with a fluence of 1  ×  1015 at cm-2. Rising the implantation temperature from room temperature to 400-600 °C resulted in a significant increase of the substitutional Eu fraction and of the number of Eu ions in the 3+  charge state as well as in a considerable decrease of implantation damage. Eu is found in both charge states 2+  and 3+  and their relative fractions are critically dependent on the implantation and annealing temperature, suggesting that defects play an important role in stabilizing one of the charge states. The damage recovery during post-implant annealing is a complex process and typically defect levels first increase for intermediate annealing temperatures and a significant recovery of the crystal only starts around 1000 °C. Cathodoluminescence spectra are dominated by the sharp Eu3+ related intra-ionic 4f transition lines in the red spectral region. They show a strong increase of the emission intensity with increasing annealing temperature, in particular for samples implanted at elevated temperature, indicating the optical activation of Eu3+ ions. However, no direct correlation of emission intensity and Eu3+ fraction was found, again pointing to the important role of defects on the physical properties of these luminescent materials.

Detection of organic vapors on sputtered and annealed thin Au films

Science.gov (United States)

Kvitek, O.; Kopacek, V.; Reznickova, A.; Svorcik, V.

2018-03-01

Unique optical properties of metal nanostructures enable construction of new types of chemical sensors. Nanostructures composed of Au on glass substrate were prepared by annealing of 2-20 nm thick sputtered Au films at 300 °C for 1 h. The annealing leads to transformation of the as sputtered continuous Au layers to a nanoisland structure. The forming nanostructure shows a strong, well defined surface plasmon resonance absorption band in UV-Vis spectrum, which is useful for construction of a chemical sensor. The samples were used to detect vapors of acetone and water in an experimental testing apparatus. The achieved signal-to-noise ratio was 583 and 386 for acetone and water vapors, respectively on the nanostructure prepared from 4 nm thick Au layer. The nanostructured sensitive layers, however, showed poor signal stability; therefore a polymer overlayer was introduced to protect it. The employed polystyrene film prepared by spin-coating improved sensitivity and selectivity of the sensor, while the dynamic properties of the sensing influenced only slightly.

High-temperature annealing of graphite: A molecular dynamics study

Science.gov (United States)

Petersen, Andrew; Gillette, Victor

2018-05-01

A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

Optimization using quantum mechanics: quantum annealing through adiabatic evolution

International Nuclear Information System (INIS)

Santoro, Giuseppe E; Tosatti, Erio

2006-01-01

We review here some recent work in the field of quantum annealing, alias adiabatic quantum computation. The idea of quantum annealing is to perform optimization by a quantum adiabatic evolution which tracks the ground state of a suitable time-dependent Hamiltonian, where 'ℎ' is slowly switched off. We illustrate several applications of quantum annealing strategies, starting from textbook toy-models-double-well potentials and other one-dimensional examples, with and without disorder. These examples display in a clear way the crucial differences between classical and quantum annealing. We then discuss applications of quantum annealing to challenging hard optimization problems, such as the random Ising model, the travelling salesman problem and Boolean satisfiability problems. The techniques used to implement quantum annealing are either deterministic Schroedinger's evolutions, for the toy models, or path-integral Monte Carlo and Green's function Monte Carlo approaches, for the hard optimization problems. The crucial role played by disorder and the associated non-trivial Landau-Zener tunnelling phenomena is discussed and emphasized. (topical review)

Evolution of the magnetic properties of Co10Cu90 nanoparticles prepared by wet chemistry with thermal annealing.

Science.gov (United States)

García, I; Echeberria, J; Kakazei, G N; Golub, V O; Saliuk, O Y; Ilyn, M; Guslienko, K Y; González, J M

2012-09-01

Nanoparticles of Co10Cu90 alloy have been prepared by sonochemical wet method. According to transmission electron microscopy, bimetallic particles with typical diameter of 50-100 nm consisting of nanocrystallites with average diameter of 15-20 nm were obtained. The samples were annealed at 300 degrees C and 450 degrees C. Zero field cooled and field cooled temperature dependences of magnetization in the temperature range of 5-400 K at 50 Oe, as well as magnetization hysteresis loops at 15, 100 and 305 K were measured by vibrating sample magnetometry. Presence of antiferromagnetic phase, most probably of the oxide Co3O4, was observed in as-prepared sample. The lowest coercivity was found for the CoCu sample annealed at-300 degrees C, whereas for as prepared sample and the one annealed at 450 degrees C it was significantly higher. The samples were additionally probed by continuous wave ferromagnetic resonance at room, temperature using a standard X-band electron spin resonance spectrometer. A good correspondence between evolution of the coercivity and the microwave resonance fields with annealing temperature was observed.

Rapid hardening induced by electric pulse annealing in nanostructured pure aluminum

DEFF Research Database (Denmark)

Zeng, Wei; Shen, Yao; Zhang, Ning

2012-01-01

Nanostructured pure aluminum was fabricated by heavy cold-rolling and then subjected to recovery annealing either by applying electric pulse annealing or by traditional air furnace annealing. Both annealing treatments resulted in an increase in yield strength due to the occurrence of a “dislocation...... source-limited hardening” mechanism. However, the hardening kinetics was substantially faster for the electric pulse annealed material. Detailed microstructural characterization suggested that the rapid hardening during electric pulse annealing is related to an enhanced rate of recovery of dislocation...

Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

Science.gov (United States)

Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

2013-05-01

One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

Thermal annealing studies in muscovite and in quartz

International Nuclear Information System (INIS)

Roberts, J.H.; Gold, R.; Ruddy, F.H.

1979-06-01

In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

Annealing behavior of high permeability amorphous alloys

International Nuclear Information System (INIS)

Rabenberg, L.

1980-06-01

Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

Effect of annealing, thickness ratio and bend angle on springback of AA6061-T6 with non-uniform thickness section

Directory of Open Access Journals (Sweden)

Adnan M.F.

2017-01-01

Full Text Available Non-uniform thickness section section is considered one of the most effective approaches to reduce automotive part weight. Reduction in term of mass and size result in less fuel consumption and greenhouse gases. Thickness is the most significant parameter to formability, therefore forming a section with non-uniform thickness becomes a great challenge. Improper process and incorrect decision may lead to severe defect and one of the main concerns is the springback. This study will focus on springback behaviour of non-uniform thickness AA6061 strip with complex profile using Taguchi Method. Profile projector (PC 3000 is used to measure the spring back and two-line technique is applied to measure angles (after loading between two lines. Three parameters (i.e. annealing temperature, thickness ratio and bend angle are studied, and results determine that the most significant parameter is bend angle, followed by thickness ratio, and then by the annealing temperature of the specimen during bending process.

Selection of refractory materials for acid tanks at the CSN continuous pickling line

International Nuclear Information System (INIS)

Silva, Sidiney Nascimento; Marques, Oscar Rosa; Bueno, Mauricio Chaves; Longo, Elson; Silva Pinheiro, Adriano da

1997-01-01

Aiming at the revamping of the CSN continuous pickling line 4 acid tanks, a Post Mortem study of the refractory lining was carried out. The collected samples were characterized through techniques such as chemical analysis, mercury porosimetry, X-ray diffraction and scanning electronic microscopy. Trying to reproduce the operational conditions closely, laboratorial simulations were carried out. Such simulations lead to the addition of some alterations on the test method proposed by ABNT. Primarily, the sulfuric acid was substituted by hydrochloric acid (30%), containing iron in solution (130g/l). As result, it was concluded that acid resistant refractories containing a smaller alumina and /or corundum and mullite concentrations, presenting a smaller open porosity and average pore diameter, have a better performance face to corrosion due to hydrochloric acid solution. In addition, abrasion wear resistance tests, according to the ASTM-G65-85 standard were carried out in order to select different materials to the acid tanks cells. (author)

Dosimetric characteristics of muscovite mineral studied under different annealing conditions

International Nuclear Information System (INIS)

Kalita, J M; Wary, G

2015-01-01

The annealing effect on the thermoluminescence (TL) characteristics of x-ray irradiated muscovite mineral relevant to dosimetry has been studied. For un-annealed and 473 K annealed samples an isolated TL peak has been observed at around 347 K; however, annealing at 573, 673 and 773 K two composite peaks have been recorded at around 347 and 408 K. Kinetic analysis reveals that there is a trap level at a depth of 0.71 eV, and due to annealing at 573 K (or above), a new trap level generates at 1.23 eV. The dosimetric characteristics, such as dose response, fading and reproducibility, have been studied in detail for all types of samples. The highest linear dose response has been observed from 10 to 2000 mGy in the 773 K annealed sample. Due to generation of the deep trap level, fading is found to reduce significantly just after annealing above 573 K. Reproducibility analysis shows that after 10 cycles of reuse the coefficient of variations in the results for 60, 180 and 1000 mGy dose irradiated 773 K annealed samples are found to be 1.78%, 1.37% and 1.58%, respectively. These analyses demand that after proper annealing muscovite shows important dosimetric features that are essentially required for a thermoluminescence dosimeter (TLD). (paper)

Modeling of irradiation embrittlement and annealing/recovery in pressure vessel steels

International Nuclear Information System (INIS)

Lott, R.G.; Freyer, P.D.

1996-01-01

The results of reactor pressure vessel (RPV) annealing studies are interpreted in light of the current understanding of radiation embrittlement phenomena in RPV steels. An extensive RPV irradiation embrittlement and annealing database has been compiled and the data reveal that the majority of annealing studies completed to date have employed test reactor irradiated weldments. Although test reactor and power reactor irradiations result in similar embrittlement trends, subtle differences between these two damage states can become important in the interpretation of annealing results. Microstructural studies of irradiated steels suggest that there are several different irradiation-induced microstructural features that contribute to embrittlement. The amount of annealing recovery and the post-anneal re-embrittlement behavior of a steel are determined by the annealing response of these microstructural defects. The active embrittlement mechanisms are determined largely by the irradiation temperature and the material composition. Interpretation and thorough understanding of annealing results require a model that considers the underlying physical mechanisms of embrittlement. This paper presents a framework for the construction of a physically based mechanistic model of irradiation embrittlement and annealing behavior

Line-robust statistics for continuous gravitational waves: safety in the case of unequal detector sensitivities

International Nuclear Information System (INIS)

Keitel, David; Prix, Reinhard

2015-01-01

The multi-detector F-statistic is close to optimal for detecting continuous gravitational waves (CWs) in Gaussian noise. However, it is susceptible to false alarms from instrumental artefacts, for example quasi-monochromatic disturbances (‘lines’), which resemble a CW signal more than Gaussian noise. In a recent paper (Keitel et al 2014 Phys. Rev. D 89 064023), a Bayesian model selection approach was used to derive line-robust detection statistics for CW signals, generalizing both the F-statistic and the F-statistic consistency veto technique and yielding improved performance in line-affected data. Here we investigate a generalization of the assumptions made in that paper: if a CW analysis uses data from two or more detectors with very different sensitivities, the line-robust statistics could be less effective. We investigate the boundaries within which they are still safe to use, in comparison with the F-statistic. Tests using synthetic draws show that the optimally-tuned version of the original line-robust statistic remains safe in most cases of practical interest. We also explore a simple idea on further improving the detection power and safety of these statistics, which we, however, find to be of limited practical use. (paper)

Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Afarin Bahrami

2012-01-01

Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

Thermal annealing of an embrittled reactor pressure vessel

International Nuclear Information System (INIS)

Mager, T.R.; Dragunov, Y.G.; Leitz, C.

1998-01-01

As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

Solvent vapor annealing of an insoluble molecular semiconductor

KAUST Repository

Amassian, Aram

2010-01-01

Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistors

KAUST Repository

Khan, Hadayat Ullah

2013-04-10

We demonstrate a new way to investigate and control the solvent vapor annealing of solution-cast organic semiconductor thin films. Solvent vapor annealing of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) is investigated in situ using quartz crystal microbalance with dissipation (QCM-D) capability, allowing us to monitor both solvent mass uptake and changes in the mechanical rigidity of the film. Using time-resolved grazing incidence wide angle X-ray scattering (GIWAXS) and complementary static atomic force microscopy (AFM), we demonstrate that solvent vapor annealing in the molecular regime can cause significant performance improvements in organic thin film transistors (OTFTs), whereas allowing the solvent to percolate and form a liquid phase results in catastrophic reorganization and dewetting of the film, making the process counterproductive. Using these lessons we devise processing conditions which prevent percolation of the adsorbed solvent vapor molecules for extended periods, thus extending the benefits of solvent vapor annealing and improving carrier mobility by nearly two orders of magnitude. Ultimately, it is demonstrated that QCM-D is a very powerful sensor of the state of the adsorbed solvent as well as the thin film, thus making it suitable for process development as well as in-line process monitoring both in laboratory and in future manufacturing settings. © 2013 American Chemical Society.

Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistors

KAUST Repository

Khan, Hadayat Ullah; Li, Ruipeng; Ren, Yi; Chen, Long; Payne, Marcia M.; Bhansali, Unnat Sampatraj; Smilgies, Detlef Matthias; Anthony, John Edward; Amassian, Aram

2013-01-01

We demonstrate a new way to investigate and control the solvent vapor annealing of solution-cast organic semiconductor thin films. Solvent vapor annealing of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) is investigated in situ using quartz crystal microbalance with dissipation (QCM-D) capability, allowing us to monitor both solvent mass uptake and changes in the mechanical rigidity of the film. Using time-resolved grazing incidence wide angle X-ray scattering (GIWAXS) and complementary static atomic force microscopy (AFM), we demonstrate that solvent vapor annealing in the molecular regime can cause significant performance improvements in organic thin film transistors (OTFTs), whereas allowing the solvent to percolate and form a liquid phase results in catastrophic reorganization and dewetting of the film, making the process counterproductive. Using these lessons we devise processing conditions which prevent percolation of the adsorbed solvent vapor molecules for extended periods, thus extending the benefits of solvent vapor annealing and improving carrier mobility by nearly two orders of magnitude. Ultimately, it is demonstrated that QCM-D is a very powerful sensor of the state of the adsorbed solvent as well as the thin film, thus making it suitable for process development as well as in-line process monitoring both in laboratory and in future manufacturing settings. © 2013 American Chemical Society.

Annealing-induced Fe oxide nanostructures on GaAs

OpenAIRE

Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

2005-01-01

We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

Hydrogen Annealing Of Single-Crystal Superalloys

Science.gov (United States)

Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

1995-01-01

Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

MgO magnetic tunnel junctions of enduring F-type upon annealing

International Nuclear Information System (INIS)

Schleicher, F; Halisdemir, U; Urbain, E; Gallart, M; Boukari, S; Beaurepaire, E; Gilliot, P; Bowen, M; Lacour, D; Montaigne, F; Hehn, M

2015-01-01

The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Î rel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO. (paper)

Vessel annealing. Will it become a routine procedure?

International Nuclear Information System (INIS)

Davies, M.

1995-01-01

The effect of neutron radiation on the reactor pressure vessel and the influence of annealing performed to eliminate this effect are explained. Some practical examples are given. A simple heat treatment at 450 degC for 168 h is sufficient to eliminate a major fraction of the radiation effect in the displacement of the transition temperature from the brittle state to the tough state. Some observations indicate that at this temperature, excessive energy recovery takes place at the upper toughness limit in the Charpy diagram. The annealing furnace manufactured by the SKODA company is described. The furnace consists of heating elements in 13 zones and 5 heating sections. The maximum power of each element is 75 kW, the total power of the furnace is 975 kW. The annealing procedure and its results are briefly outlined for the reactor pressure vessel at unit 2 of the Jaslovske Bohunice NPP. Reactor pressure vessel annealing is proposed for the Marble Hill NPP which has been shut down. Preparatory activities for annealing are also under way at the Loviisa NPP. (J.B.)

MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

Directory of Open Access Journals (Sweden)

Guillaume Wantz

2012-11-01

Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

Self-organized morphological evolution and dewetting in solvent vapor annealing of spin coated polymer blend nanostructures.

Science.gov (United States)

Roy, Sudeshna; Sharma, Ashutosh

2015-07-01

Dewetting pathways, kinetics and morphologies of thin films of phase separating polymer blends are governed by the relative mobilities of the two components. We characterize the morphological transformations of the nanostructures of a PS/PMMA blend by annealing in toluene and chloroform vapors. Toluene leads to faster reorganization of PS, whereas chloroform engenders the opposite effect. Spin coating produces a very rough PMMA rich layer that completely wets the substrate and forms a plethora of slender columns protruding through the continuous PS rich layer on top. The nanostructures were stable under long thermal annealing but in the vapor annealing, phase separation and dewetting occurred readily to form the equilibrium structures of dewetted droplets of PS on top of PMMA which also climbed around the PS droplets to form rims. Toluene and chloroform annealing required around 50 h and 1 h respectively to attain the equilibrium. Substantial differences are observed in the intermediate morphologies (heights of nanostructures, roughness and size). PMMA columns remained embedded in the dewetted PS droplets, whereas a high mobility of PMMA in chloroform allowed its rapid evacuation during dewetting to produce an intermediate swiss-cheese like morphology of PS domains. Copyright © 2015 Elsevier Inc. All rights reserved.

Study on thermal annealing of cadmium zinc telluride (CZT) crystals

International Nuclear Information System (INIS)

Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

2010-01-01

Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

Irradiation embrittlement and optimisation of annealing

International Nuclear Information System (INIS)

1993-01-01

This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

Irradiation embrittlement and optimisation of annealing

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-12-31

This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects.

Irradiation, Annealing, and Reirradiation Effects on American and Russian Reactor Pressure Vessel Steels

International Nuclear Information System (INIS)

Chernobaeva, A.A.; Korolev, Y.N.; Nanstad, R.K.; Nikolaev, Y.A.; Sokolov, M.A.

1998-01-01

One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. Even though a postirradiation anneal may be deemed successful, a critical aspect of continued RPV operation is the rate of embrittlement upon reirradiation. There are insufficient data available to allow for verification of available models of reirradiation embrittlement or for the development of a reliable predictive methodology. This is especially true in the case of fracture toughness data. Under the U.S.-Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS), Working Group 3 on Radiation Embrittlement, Structural Integrity, and Life Extension of Reactor Vessels and Supports agreed to conduct a comparative study of annealing and reirradiation effects on RPV steels. The Working Group agreed that each side would irradiate, anneal, reirradiate (if feasible ), and test two materials of the other. Charpy V-notch (CVN) and tensile specimens were included. Oak Ridge National Laboratory (ORNL) conducted such a program (irradiation and annealing, including static fracture toughness) with two weld metals representative of VVER-440 and VVER-1000 RPVs, while the Russian Research Center-Kurchatov Institute (RRC-KI) conducted a program (irradiation, annealing, reirradiation, and reannealing) with Heavy-Section Steel Technology (HSST) Program Plate 02 and Heavy-Section Steel Irradiation (HSSI) Program Weld 73W. The results for each material from each laboratory are compared with those from the other laboratory. The ORNL experiments with the VVER welds included irradiation to about 1 x 10 19 n/cm 2 (>1 MeV), while the RRC-KI experiments with the U.S. materials included irradiations from about 2 to 18 x 10 19 n/cm 2 (>l MeV). In both cases, irradiations were conducted at ∼290 C and annealing treatments were conducted at ∼454 C. The ORNL and RRC

Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

International Nuclear Information System (INIS)

Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

2006-01-01

The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

Model-Based Control of a Continuous Coating Line for Proton Exchange Membrane Fuel Cell Electrode Assembly

Directory of Open Access Journals (Sweden)

Vikram Devaraj

2015-01-01

Full Text Available The most expensive component of a fuel cell is the membrane electrode assembly (MEA, which consists of an ionomer membrane coated with catalyst material. Best-performing MEAs are currently fabricated by depositing and drying liquid catalyst ink on the membrane; however, this process is limited to individual preparation by hand due to the membrane’s rapid water absorption that leads to shape deformation and coating defects. A continuous coating line can reduce the cost and time needed to fabricate the MEA, incentivizing the commercialization and widespread adoption of fuel cells. A pilot-scale membrane coating line was designed for such a task and is described in this paper. Accurate process control is necessary to prevent manufacturing defects from occurring in the coating line. A linear-quadratic-Gaussian (LQG controller was developed based on a physics-based model of the coating process to optimally control the temperature and humidity of the drying zones. The process controller was implemented in the pilot-scale coating line proving effective in preventing defects.

The User-friendly On-Line Diffusion Chamber

CERN Document Server

Aviles Acosta, Jaime

2015-01-01

The On-Line Diffusion Chamber is a stand-alone apparatus built to carry out short-live radiotracer diffusion studies. The availability of the on-demand production of isotopes in the ISOLDE facility, and the design of the apparatus to streamline the implantation process, annealing treatment, ion gun ablation with a tape transport system, and radiation intensity measurement with a Ge gamma detector all in the same apparatus, gives the On-Line Diffusion Chamber a unique ability to studies with short-lived radioisotopes or isomer states that are not possible in any other facility in the world.

Comparison of Lasserre's Measure-based Bounds for Polynomial Optimization to Bounds Obtained by Simulated Annealing

NARCIS (Netherlands)

de Klerk, Etienne; Laurent, Monique

We consider the problem of minimizing a continuous function f over a compact set K. We compare the hierarchy of upper bounds proposed by Lasserre in [SIAM J. Optim. 21(3) (2011), pp. 864-885] to bounds that may be obtained from simulated annealing. We show that, when f is a polynomial and K a convex

Unraveling Quantum Annealers using Classical Hardness

Science.gov (United States)

Martin-Mayor, Victor; Hen, Itay

2015-01-01

Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealing optimizers that contain hundreds of quantum bits. These optimizers, commonly referred to as ‘D-Wave’ chips, promise to solve practical optimization problems potentially faster than conventional ‘classical’ computers. Attempts to quantify the quantum nature of these chips have been met with both excitement and skepticism but have also brought up numerous fundamental questions pertaining to the distinguishability of experimental quantum annealers from their classical thermal counterparts. Inspired by recent results in spin-glass theory that recognize ‘temperature chaos’ as the underlying mechanism responsible for the computational intractability of hard optimization problems, we devise a general method to quantify the performance of quantum annealers on optimization problems suffering from varying degrees of temperature chaos: A superior performance of quantum annealers over classical algorithms on these may allude to the role that quantum effects play in providing speedup. We utilize our method to experimentally study the D-Wave Two chip on different temperature-chaotic problems and find, surprisingly, that its performance scales unfavorably as compared to several analogous classical algorithms. We detect, quantify and discuss several purely classical effects that possibly mask the quantum behavior of the chip. PMID:26483257

Mechanical behavior of multipass welded joint during stress relief annealing

International Nuclear Information System (INIS)

Ueda, Yukio; Fukuda, Keiji; Nakacho, Keiji; Takahashi, Eiji; Sakamoto, Koichi.

1978-01-01

An investigation into mechanical behavior of a multipass welded joint of a pressure vessel during stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analysis, the thermal elastic-plastic creep theory developed by the authors was applied. The behavior of multipass welded joints during the entire thermal cycle, from welding to stress relief annealing, was consistently analyzed by this theory. The results of the analysis show a good, fundamentally coincidence with the experimental findings. The outline of the results and conclusions is as follows. (1) In the case of the material (2 1/4Cr-1Mo steel) furnished in this study, the creep strain rate during stress relief annealing below 575 0 C obeys the strain-hardening creep law using the transient creep and the one above 575 0 C obeys the power creep law using the stational creep. (2) In the transverse residual stress (σsub(x)) distribution after annealing, the location of the largest tensile stress on the top surface is about 15 mm away from the toe of weld, and the largest at the cross section is just below the finishing bead. These features are similar to those of welding residual stresses. But the stress distribution after annealing is smoother than one from welding. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature. For example, most of residual stresses are relieved at the heating stage with a heating rate of 30 0 C/hr. to 100 0 C/hr. if the annealing temperature is 650 0 C, but if the annealing temperature is 550 0 C, the annealing is not effective even with a longer holding time. (4) In the case of multipass welding residual stresses studied in this paper, the behaviors of high stresses during annealing are approximated by ones during anisothermal relaxation. (auth.)

Tunable metal-insulator transitions in bilayer graphene by thermal annealing

OpenAIRE

Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

2012-01-01

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

Effect of annealing on properties of Mg doped Zn-ferrite nanoparticles

Directory of Open Access Journals (Sweden)

K. Nadeem

2015-04-01

Full Text Available A comparison of structural and magnetic properties of as-prepared and annealed (900 °C Mg doped Zn ferrite nanoparticles (Zn1−xMgxFe2O4, with x=0, 0.1, 0.2, 0.3, 0.4 and 0.5 is presented. X-ray diffraction (XRD studies confirmed the cubic spinel structure for both the as-prepared and annealed nanoparticles. The average crystallite size and lattice parameter were increased by annealing. Scanning electron microscopy (SEM images also showed that the average particle size increased after annealing. Fourier transform infrared spectroscopy (FTIR also confirmed the spinel structure for both series of nanoparticles. For both annealed and as-prepared nanoparticles, the O–Mtet.–O vibrational band shifts towards higher wave numbers with increased Mg concentration due to cationic rearrangement on the lattice sites. Magnetization studies revealed an anomalous decreasing magnetization for the annealed nanoparticles which is also ascribed to cationic rearrangement on the lattice sites after annealing. The measurement of coercivity showed a decreasing trend by annealing due to the increased nanoparticle size and better crystallinity.

Embrittlement recovery due to annealing of reactor pressure vessel steels

International Nuclear Information System (INIS)

Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

1996-01-01

Embrittlement of reactor pressure vessels (RPVs) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. Although such an annealing process has not been applied to any commercial plants in the United States, one US Army reactor, the BR3 plant in Belgium, and several plants in eastern Europe have been successfully annealed. All available Charpy annealing data were collected and analyzed in this project to develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy over a range of potential annealing conditions. Pattern recognition, transformation analysis, residual studies, and the current understanding of the mechanisms involved in the annealing process were used to guide the selection of the most sensitive variables and correlating parameters and to determine the optimal functional forms for fitting the data. The resulting models were fitted by nonlinear least squares. The use of advanced tools, the larger data base now available, and insight from surrogate hardness data produced improved models for quantitative evaluation of the effects of annealing. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and the surrogate hardness data base. The standard errors of the resulting recovery models relative to calibration data are comparable to the uncertainty in unirradiated Charpy data. This work also demonstrates that microhardness recovery is a good surrogate for transition temperature shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes

Annealing effect on restoration of irradiation steel properties

International Nuclear Information System (INIS)

Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

1986-01-01

The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

Annealing of the BR3 reactor pressure vessel

International Nuclear Information System (INIS)

Fabry, A.; Motte, F.; Stiennon, G.; Debrue, J.; Gubel, P.; Van de Velde, J.; Minsart, G.; Van Asbroeck, P.

1985-01-01

The pressure vessel of the Belgian BR-3 plant, a small (11 MWe) PWR presently used for fuel testing programs and operated since 1962, was annealed during March, 1984. The anneal was performed under wet conditions for 168 hours at 650 0 F with core removal and within plant design margins justification for the anneal, summary of plant characteristics, description of materials sampling, summary of reactor physics and dosimetry, development of embrittlement trend curves, hypothesized pressurized and overcooling thermal shock accidents, and conclusions are provided in detail

Influence of oxygen on the annealing of radioactive defects in germanium

International Nuclear Information System (INIS)

Gasimov, G.M.; Mustafayev, Yn.M.; Gasimova, V.G.

2002-01-01

The isochronal annealing were carried out in the wide temperature range, for the establishment of oxygen influence on the annealing of radioactive defects (Rd) in any radiated germanium samples, concentrated with oxygen up to concentration of 9.7·10 16 cm -3 . It is shown that the curves of isochronal annealing of one of the such samples 1, with primary current charge concentration of 9.0·10 cm 14 , radiated by integral electron flow of φ= 8.0·10 16 cm -3 , at 293 K and also the non-oxygen samples 2, with primary concentration of 1.7·10 cm -3 , radiated at above mentioned conditions. The sample 1 is converted by radiation to p-type, but the conversion not occur in samples 2. It is illustrated, that that there is two annealing stage at 340-430 K, for the samples 2, which in results takes place the complete annealing of the RD. At 300 K the annealing takes place in samples of 1, but at 340 K - the reverse annealing of RD. The sample was at compensated state in the temperature range of 360-400 K. An annealing of RD takes place again at 440 K and the sample re-converted its conductivity type. The reverse annealing at 480 K, and at about 510 K, the substantial annealing of the defects has been observed, which in results a sample restores it's primary parameters. The carried out experiments show that as in converted, and also in n-type be samples, Is observed the reverse annealing of RD, but the reverse annealing of current charge carriers in n-type samples is observed only at such conditions, of the integral flow of accelerated elections exceeds the primary concentration of current charge carriers about 4 time of magnitude (φ≥4n 0 ). Besides, the complete annealing of RD in germanium samples concentrated with oxygen, takes place at more high temperatures in comparison with the non-oxygen samples

Manipulation of magnetic properties of glass-coated microwires by annealing

Energy Technology Data Exchange (ETDEWEB)

Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Chichay, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Talaat, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); Rodionova, V. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); National University of Science and Technology (MISIS), 119049 Moscow (Russian Federation); Blanco, J.M. [Dpto. Física Aplicada, EUPDS Basque Country University UPV/EHU (Spain); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain)

2015-06-01

We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect.

Manipulation of magnetic properties of glass-coated microwires by annealing

International Nuclear Information System (INIS)

Zhukov, A.; Chichay, K.; Talaat, A.; Rodionova, V.; Blanco, J.M.; Ipatov, M.; Zhukova, V.

2015-01-01

We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect

Propagating self-sustained annealing of radiation-induced interstitial complexes

International Nuclear Information System (INIS)

Bokov, P M; Selyshchev, P A

2016-01-01

A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions. (paper)

In-line Raman spectroscopic monitoring and feedback control of a continuous twin-screw pharmaceutical powder blending and tableting process.

Science.gov (United States)

Nagy, Brigitta; Farkas, Attila; Gyürkés, Martin; Komaromy-Hiller, Szofia; Démuth, Balázs; Szabó, Bence; Nusser, Dávid; Borbás, Enikő; Marosi, György; Nagy, Zsombor Kristóf

2017-09-15

The integration of Process Analytical Technology (PAT) initiative into the continuous production of pharmaceuticals is indispensable for reliable production. The present paper reports the implementation of in-line Raman spectroscopy in a continuous blending and tableting process of a three-component model pharmaceutical system, containing caffeine as model active pharmaceutical ingredient (API), glucose as model excipient and magnesium stearate as lubricant. The real-time analysis of API content, blend homogeneity, and tablet content uniformity was performed using a Partial Least Squares (PLS) quantitative method. The in-line Raman spectroscopic monitoring showed that the continuous blender was capable of producing blends with high homogeneity, and technological malfunctions can be detected by the proposed PAT method. The Raman spectroscopy-based feedback control of the API feeder was also established, creating a 'Process Analytically Controlled Technology' (PACT), which guarantees the required API content in the produced blend. This is, to the best of the authors' knowledge, the first ever application of Raman-spectroscopy in continuous blending and the first Raman-based feedback control in the formulation technology of solid pharmaceuticals. Copyright © 2017 Elsevier B.V. All rights reserved.

An Alternative to Annealing TiO2 Nanotubes for Morphology Preservation: Atmospheric Pressure Plasma Jet Treatment.

Science.gov (United States)

Seo, Sang-Hee; Uhm, Soo-Hyuk; Kwon, Jae-Sung; Choi, Eun Ha; Kim, Kwang-Mahn; Kim, Kyoung-Nam

2015-03-01

Titanium oxide nanotube layer formed by plasma electrolytic oxidation (PEO) is known to be excellent in biomaterial applications. However, the annealing process which is commonly performed on the TiO2 nanotubes cause defects in the nanotubular structure. The purpose of this work was to apply a non-thermal atmospheric pressure plasma jet on diameter-controlled TiO2 nanotubes to mimic the effects of annealing while maintaining the tubular structure for use as biomaterial. Diameter-controlled nanotube samples fabricated by plasma electrolytic oxidation were dried and prepared under three different conditions: untreated, annealed at 450 °C for 1 h in air with a heating rate of 10 °C/min, and treated with an air-based non-thermal atmospheric pressure plasma jet for 5 minutes. The contact angle measurement was investigated to confirm the enhanced hydrophilicity of the TiO2 nanotubes. The chemical composition of the surface was studied using X-ray photoelectron spectroscopy, and the morphology of TiO2 nanotubes was examined by field emission scanning electron microscopy. For the viability of the cell, the attachment of the osteoblastic cell line MC3T3-E1 was determined using the water-soluble tetrazolium salt assay. We found that there are no morphological changes in the TiO2 nanotubular structure after the plasma treatment. Also, we investigated a change in the chemical composition and enhanced hydrophilicity which result in improved cell behavior. The results of this study indicated that the non-thermal atmospheric pressure plasma jet results in osteoblast functionality that is comparable to annealed samples while maintaining the tubular structure of the TiO2 nanotubes. Therefore, this study concluded that the use of a non-thermal atmospheric pressure plasma jet on nanotube surfaces may replace the annealing process following plasma electrolytic oxidation.

In situ annealing of hydroxyapatite thin films

International Nuclear Information System (INIS)

Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

2006-01-01

Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

Quo vadis: Hydrologic inverse analyses using high-performance computing and a D-Wave quantum annealer

Science.gov (United States)

O'Malley, D.; Vesselinov, V. V.

2017-12-01

Classical microprocessors have had a dramatic impact on hydrology for decades, due largely to the exponential growth in computing power predicted by Moore's law. However, this growth is not expected to continue indefinitely and has already begun to slow. Quantum computing is an emerging alternative to classical microprocessors. Here, we demonstrated cutting edge inverse model analyses utilizing some of the best available resources in both worlds: high-performance classical computing and a D-Wave quantum annealer. The classical high-performance computing resources are utilized to build an advanced numerical model that assimilates data from O(10^5) observations, including water levels, drawdowns, and contaminant concentrations. The developed model accurately reproduces the hydrologic conditions at a Los Alamos National Laboratory contamination site, and can be leveraged to inform decision-making about site remediation. We demonstrate the use of a D-Wave 2X quantum annealer to solve hydrologic inverse problems. This work can be seen as an early step in quantum-computational hydrology. We compare and contrast our results with an early inverse approach in classical-computational hydrology that is comparable to the approach we use with quantum annealing. Our results show that quantum annealing can be useful for identifying regions of high and low permeability within an aquifer. While the problems we consider are small-scale compared to the problems that can be solved with modern classical computers, they are large compared to the problems that could be solved with early classical CPUs. Further, the binary nature of the high/low permeability problem makes it well-suited to quantum annealing, but challenging for classical computers.

Defect evolution and dopant activation in laser annealed Si and Ge

DEFF Research Database (Denmark)

Cristiano, F.; Shayesteh, M.; Duffy, R.

2016-01-01

Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

Isothermal annealing of silicon implanted with 50 keV 10B ions

International Nuclear Information System (INIS)

Weidner, B.; Zaschke, G.

1974-01-01

Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10 B ions in the dose range of 7.5 x 10 12 cm -2 to 2.0 x 10 15 cm -2 . Annealing temperatures ranged from 700 to 900 0 C. Maximum annealing time was 10 4 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range

Characterization of a continuous feline mammary epithelial cell line susceptible to feline epitheliotropic viruses.

Science.gov (United States)

Pesavento, Patricia; Liu, Hongwei; Ossiboff, Robert J; Stucker, Karla M; Heymer, Anna; Millon, Lee; Wood, Jason; van der List, Deborah; Parker, John S L

2009-04-01

Mucosal epithelial cells are the primary targets for many common viral pathogens of cats. Viral infection of epithelia can damage or disrupt the epithelial barrier that protects underlying tissues. In vitro cell culture systems are an effective means to study how viruses infect and disrupt epithelial barriers, however no true continuous or immortalized feline epithelial cell culture lines are available. A continuous cell culture of feline mammary epithelial cells (FMEC UCD-04-2) that forms tight junctions with high transepithelial electrical resistance (>2000Omegacm(-1)) 3-4 days after reaching confluence was characterized. In addition, it was shown that FMECs are susceptible to infection with feline calicivirus (FCV), feline herpesvirus (FHV-1), feline coronavirus (FeCoV), and feline panleukopenia virus (FPV). These cells will be useful for studies of feline viral disease and for in vitro studies of feline epithelia.

Optical biosensor optimized for continuous in-line glucose monitoring in animal cell culture.

Science.gov (United States)

Tric, Mircea; Lederle, Mario; Neuner, Lisa; Dolgowjasow, Igor; Wiedemann, Philipp; Wölfl, Stefan; Werner, Tobias

2017-09-01

Biosensors for continuous glucose monitoring in bioreactors could provide a valuable tool for optimizing culture conditions in biotechnological applications. We have developed an optical biosensor for long-term continuous glucose monitoring and demonstrated a tight glucose level control during cell culture in disposable bioreactors. The in-line sensor is based on a commercially available oxygen sensor that is coated with cross-linked glucose oxidase (GOD). The dynamic range of the sensor was tuned by a hydrophilic perforated diffusion membrane with an optimized permeability for glucose and oxygen. The biosensor was thoroughly characterized by experimental data and numerical simulations, which enabled insights into the internal concentration profile of the deactivating by-product hydrogen peroxide. The simulations were carried out with a one-dimensional biosensor model and revealed that, in addition to the internal hydrogen peroxide concentration, the turnover rate of the enzyme GOD plays a crucial role for biosensor stability. In the light of this finding, the glucose sensor was optimized to reach a long functional stability (>52 days) under continuous glucose monitoring conditions with a dynamic range of 0-20 mM and a response time of t 90  ≤ 10 min. In addition, we demonstrated that the sensor was sterilizable with beta and UV irradiation and only subjected to minor cross sensitivity to oxygen, when an oxygen reference sensor was applied. Graphical abstract Measuring setup of a glucose biosensor in a shake flask for continuous glucose monitoring in mammalian cell culture.

Annealing behavior of solution grown polyethylene single crystals

NARCIS (Netherlands)

Loos, J.; Tian, M.

2006-01-01

The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

Annealing effects on electron-beam evaporated Al2O3 films

International Nuclear Information System (INIS)

Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

2005-01-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

Annealing effects on electron-beam evaporated Al 2O 3 films

Science.gov (United States)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Hydration-annealing of chemical radiation damage in calcium nitrate

International Nuclear Information System (INIS)

Nair, S.M.K.; James, C.

1984-01-01

The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

Principal and secondary luminescence lifetime components in annealed natural quartz

International Nuclear Information System (INIS)

Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

2008-01-01

Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

Reduction of thermal quenching of biotite mineral due to annealing

International Nuclear Information System (INIS)

Kalita, J.M.; Wary, G.

2014-01-01

Graphical abstract: - Highlights: • Thermoluminescence of X-ray irradiate biotite was studied at various heating rates. • Thermal quenching was found to decrease with increase in annealing temperature. • Due to annealing one trap level was vanished and a new shallow trap level generated. • The new trap level contributes low thermally quenched thermoluminescence signal. - Abstract: Thermoluminescence (TL) of X-ray irradiated natural biotite annealed at 473, 573, 673 and 773 K were studied within 290–480 K at various linear heating rates (2, 4, 6, 8 and 10 K/s). A Computerized Glow Curve Deconvolution technique was used to study various TL parameters. Thermal quenching was found to be very high for un-annealed sample, however it decreased significantly with increase in annealing temperature. For un-annealed sample thermal quenching activation energy (W) and pre-exponential frequency factor (C) were found to be W = (2.71 ± 0.05) eV and C = (2.38 ± 0.05) × 10 12 s −1 respectively. However for 773 K annealed sample, these parameters were found to be W = (0.63 ± 0.03) eV, C = (1.75 ± 0.27) × 10 14 s −1 . Due to annealing, the initially present trap level at depth 1.04 eV was vanished and a new shallow trap state was generated at depth of 0.78 eV which contributes very low thermally quenched TL signal

Conformational Space Annealing explained: A general optimization algorithm, with diverse applications

Science.gov (United States)

Joung, InSuk; Kim, Jong Yun; Gross, Steven P.; Joo, Keehyoung; Lee, Jooyoung

2018-02-01

Many problems in science and engineering can be formulated as optimization problems. One way to solve these problems is to develop tailored problem-specific approaches. As such development is challenging, an alternative is to develop good generally-applicable algorithms. Such algorithms are easy to apply, typically function robustly, and reduce development time. Here we provide a description for one such algorithm called Conformational Space Annealing (CSA) along with its python version, PyCSA. We previously applied it to many optimization problems including protein structure prediction and graph community detection. To demonstrate its utility, we have applied PyCSA to two continuous test functions, namely Ackley and Eggholder functions. In addition, in order to provide complete generality of PyCSA to any types of an objective function, we demonstrate the way PyCSA can be applied to a discrete objective function, namely a parameter optimization problem. Based on the benchmarking results of the three problems, the performance of CSA is shown to be better than or similar to the most popular optimization method, simulated annealing. For continuous objective functions, we found that, L-BFGS-B was the best performing local optimization method, while for a discrete objective function Nelder-Mead was the best. The current version of PyCSA can be run in parallel at the coarse grained level by calculating multiple independent local optimizations separately. The source code of PyCSA is available from http://lee.kias.re.kr.

Effect of Annealing on the Thermoluminescence Properties of ZnO Nanophosphor

Science.gov (United States)

Kalita, J. M.; Wary, G.

2017-07-01

We report the effect of annealing on the thermoluminescence (TL) properties of zinc oxide (ZnO) nanophosphor. The sample was synthesised by a wet chemical process. The characterisation report shows that the size of the grains is within 123.0 nm-160.5 nm. TL measured at 2 K/s from a fresh un-annealed sample irradiated to 60 mGy shows a composite glow curve containing three peaks at 353.2 K, 429.1 K, and 455.3 K. On the other hand, samples annealed at 473 K and 573 K followed by irradiation to 60 mGy do not give TL. However, annealing at 673 K and 773 K followed by irradiation to the same dose produces a glow curve comprising two overlapping peaks at 352.3 K and 370.6 K. In the TL emission spectrum of un-annealed sample, two emission peaks were found in green ( 523 nm) and orange ( 620 nm) regions whereas in annealed samples, only a peak was found in the orange region ( 618 nm). Kinetic analysis shows that the activation energy corresponding to TL peaks at 353.2 K, 429.1 K, and 455.3 K of the un-annealed sample are 0.64 eV, 0.80 eV, and 1.20 eV whereas that of the peaks at 352.3 K and 370.6 K of 673 K and 773 K annealed samples are 0.64 eV and 0.70 eV, respectively. All peaks of un-annealed and annealed samples, except the one at 429.1 K of the un-annealed sample, follow first-order kinetics whereas the peak at 429.1 K follows second-order kinetics. Considering the kinetic and spectral features, an energy band model for ZnO nanophosphor has been proposed.

In-place thermal annealing of nuclear reactor pressure vessels

International Nuclear Information System (INIS)

Server, W.L.

1985-04-01

Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

Unified model of damage annealing in CMOS, from freeze-in to transient annealing

International Nuclear Information System (INIS)

Sander, H.H.; Gregory, B.L.

Results of an experimental study at 76 0 K, are presented showing that radiation-produced holes in SiO 2 are immobile at this temperature. If an electric field is present in the SiO 2 during low temperature (76 0 K) irradiation to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide. These results are the basis for concluding that if a complimentary p,n metal-oxide semiconductor (CMOS) device is irradiated for sufficient time at 76 0 K to build-in an appreciable field, further irradiation with gate bias removed will produce very little additional change in V/sub th/, since the field in the oxide tends to keep all generated electrons in the oxide where they recombine with trapped holes. Hence the hole trapping rate = the hole annihilation rate. The room-temperature annealing following a pulsed gamma exposure occurs in two regimes. The first recovery of V/sub th/ occurs prior to 10 -4 seconds. The magnitude of this very early-time recovery, at room temperature, is oxide-dependent, and oxide process dependent. The rate-of-annealing is what is truly different between a rad-hard and a rad-soft device, since annealing in the hardest devices occurs very quickly at room temperature. (U.S.)

Strain relaxation near high-k/Si interface by post-deposition annealing

International Nuclear Information System (INIS)

Emoto, T.; Akimoto, K.; Yoshida, Y.; Ichimiya, A.; Nabatame, T.; Toriumi, A.

2005-01-01

We studied the effect of post-deposition annealing on a HfO 2 /Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm 3 grows at the interface between the HfO 2 layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO 2 layer

On lumped models for thermodynamic properties of simulated annealing problems

International Nuclear Information System (INIS)

Andresen, B.; Pedersen, J.M.; Salamon, P.; Hoffmann, K.H.; Mosegaard, K.; Nulton, J.

1987-01-01

The paper describes a new method for the estimation of thermodynamic properties for simulated annealing problems using data obtained during a simulated annealing run. The method works by estimating energy-to-energy transition probabilities and is well adapted to simulations such as simulated annealing, in which the system is never in equilibrium. (orig.)

Designing effective on-line continuing medical education.

Science.gov (United States)

Zimitat, Craig

2001-03-01

The Internet, and new information and communication technologies available through the Internet, provides medical educators with an opportunity to develop unique on-line learning environments with real potential to improve physicians' knowledge and effect change in their clinical practice. There are approximately 100 websites offering on-line CME courses in the USA alone. However, few of these CME courses appear to be based on sound educational principles or CME research and may have little chance of achieving the broader goals of CME. The majority of these courses closely resemble their traditional counterparts (e.g. paper-based books are now electronic books) and appear to be mere substitutions for old-technology CME resources. Whilst some CME providers add unique features of the Internet to enrich their websites, they do not employ strategies to optimize the learning opportunities afforded by this new technology. The adoption of adult learning principles, reflective practice and problem-based approaches can be used as a foundation for sound CME course design. In addition, knowledge of Internet technology and the learning opportunities it affords, together with strategies to maintain participation and new assessment paradigms, are all needed for developing online CME. We argue for an evidence-based and strategic approach to the development of on-line CME courses designed to enhance physician learning and facilitate change in clinical behaviour.

The changes of ADI structure during high temperature annealing

OpenAIRE

A. Krzyńska; M. Kaczorowski

2010-01-01

The results of structure investigations of ADI during it was annealing at elevated temperature are presented. Ductile iron austempered at temperature 325oC was then isothermally annealed 360 minutes at temperature 400, 450, 500 and 550oC. The structure investigations showed that annealing at these temperatures caused substantial structure changes and thus essential hardness decrease, which is most useful property of ADI from point of view its practical application. Degradation advance of the ...

Melting phenomenon and laser annealing in semiconductors

International Nuclear Information System (INIS)

Narayan, J.

1981-03-01

The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

Annealing of ion implanted silicon

International Nuclear Information System (INIS)

Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

1980-09-01

The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

Crystallization degree change of expanded graphite by milling and annealing

International Nuclear Information System (INIS)

Tang Qunwei; Wu Jihuai; Sun Hui; Fang Shijun

2009-01-01

Expanded graphite was ball milled with a planetary mill in air atmosphere, and subsequently thermal annealed. The samples were characterized by using X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was found that in the milling initial stage (less than 12 h), the crystallization degree of the expanded graphite declined gradually, but after milling more than 16 h, a recrystallization of the expanded graphite toke place, and ordered nanoscale expanded graphite was formed gradually. In the annealing initial stage, the non-crystallization of the graphite occurred, but, beyond an annealing time, recrystallizations of the graphite arise. Higher annealing temperature supported the recrystallization. The milled and annealed expanded graphite still preserved the crystalline structure as raw material and hold high thermal stability.

High-Performance All-Solid-State Na-S Battery Enabled by Casting-Annealing Technology.

Science.gov (United States)

Fan, Xiulin; Yue, Jie; Han, Fudong; Chen, Ji; Deng, Tao; Zhou, Xiuquan; Hou, Singyuk; Wang, Chunsheng

2018-04-24

Room-temperature all-solid-state Na-S batteries (ASNSBs) using sulfide solid electrolytes are a promising next-generation battery technology due to the high energy, enhanced safety, and earth abundant resources of both sodium and sulfur. Currently, the sulfide electrolyte ASNSBs are fabricated by a simple cold-pressing process leaving with high residential stress. Even worse, the large volume change of S/Na 2 S during charge/discharge cycles induces additional stress, seriously weakening the less-contacted interfaces among the solid electrolyte, active materials, and the electron conductive agent that are formed in the cold-pressing process. The high and continuous increase of the interface resistance hindered its practical application. Herein, we significantly reduce the interface resistance and eliminate the residential stress in Na 2 S cathodes by fabricating Na 2 S-Na 3 PS 4 -CMK-3 nanocomposites using melting-casting followed by stress-release annealing-precipitation process. The casting-annealing process guarantees the close contact between the Na 3 PS 4 solid electrolyte and the CMK-3 mesoporous carbon in mixed ionic/electronic conductive matrix, while the in situ precipitated Na 2 S active species from the solid electrolyte during the annealing process guarantees the interfacial contact among these three subcomponents without residential stress, which greatly reduces the interfacial resistance and enhances the electrochemical performance. The in situ synthesized Na 2 S-Na 3 PS 4 -CMK-3 composite cathode delivers a stable and highly reversible capacity of 810 mAh/g at 50 mA/g for 50 cycles at 60 °C. The present casting-annealing strategy should provide opportunities for the advancement of mechanically robust and high-performance next-generation ASNSBs.

Contribution to implanted silicon layers and their annealing

International Nuclear Information System (INIS)

Combasson, J.-L.

1976-01-01

Defects created by boron implantation in silicon have been characterized by measuring the diffusion coefficient during annealing. Implanted impurity distributions were calculated after analyzing the hypotheses relating to charged particle slowing down through matter. Profiles are predicted with a good accuracy, by replacing occasionally the electronic stopping law by an empirical law. The asymmetries predicted are generally observed but deviations may occur for crystalline targets, or when the ion is heavy with regard to the substrate (in the event the Thomas-Fermi potential is not yet valid due to the high impact parameters). When deviations are neglected, the displacement cascade from implantation is represented by a damage profile proportional to the distribution of the Frenkel pairs. The annealing of the implanted layers is characterized by three annealing stages. The first one (400 deg C-600 deg C) is imputed to divacancy annealing associated to the formation and migration of boron-vacancy complexes. The second one (500 deg C-650 deg C) is characterized by the Watkins replacement mechanism. At high temperatures, when the annealing duration is longer than that of precipitation, interstitial loops are dissolved, and the thermal diffusion of boron atoms involves the vacancy mechanism of thermal diffusion [fr

Laser annealing heals radiation damage in avalanche photodiodes

Energy Technology Data Exchange (ETDEWEB)

Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

2017-12-15

Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

KAUST Repository

Alsaggaf, Ahmed

2014-06-01

Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.

On the correlation between annealing and variabilities in pulsed-luminescence from quartz

International Nuclear Information System (INIS)

Chithambo, M.L.

2006-01-01

Properties of luminescence lifetimes in quartz related to annealing between 500 and 900 deg. C have been investigated. The luminescence was pulse-stimulated at 470nm from sets of granular quartz annealed at 500, 600, 700, 800, and 900 deg. C. The lifetimes decrease with annealing temperature from about 42 to 33μs when the annealing temperature is increased from 500 to 900 deg. C. Luminescence lifetimes are most sensitive to duration of annealing at 600 deg. C, decreasing from 40.2+/-0.7μs by as much as 7μs when the duration of annealing is changed from 10 to 60min. However, at 800-900 deg. C lifetimes are essentially independent of annealing temperature at about 33μs. Increasing the exciting beta dose causes an increase in the lifetimes of the stimulated luminescence in the sample annealed at 800 deg. C but not in those annealed at either 500 or 600 deg. C. The temperature-resolved distribution of luminescence lifetimes is affected by thermal quenching of luminescence. These features may be accounted for with reference to two principal luminescence centres involved in the luminescence emission process

Annealing-induced near-surface ordering in disordered Ga0.5In0.5P

International Nuclear Information System (INIS)

Luo, J.S.; Olson, J.M.; Wu, M.

1995-01-01

Most samples of Ga 0.5 In 0.5 P grown by metalorganic chemical vapor deposition (MOCVD) on (001)-like surfaces are partially ordered and exhibit distinctive reflectance difference spectral (RDS) features associated with the anisotropic properties of the ordered bulk structure. It is known that the ordering is not a ground-state property of the bulk but is surface-induced during growth. On the other hand, Ga 0.5 In 0.5 P grown by liquid-phase epitaxy (LPE) is completely disordered, and it has been shown that its RD spectrum is essentially featureless. In this article, we present a study of the effects of annealing (in a PH 3 /H 2 atmosphere) on LPE-grown Ga 0.5 In 0.5 P using ex situ and in situ RDS. The annealing temperatures and times used in this study (650 degree C and tens of minutes) have virtually no effect on the bulk optical or structural properties of MOCVD-grown Ga 0.5 In 0.5 P. For LPE-grown Ga 0.5 In 0.5 P, we find that annealing induces bulk-like RDS features at both E 0 and E 1 with line shapes similar to those observed for MOCVD-grown ordered Ga 0.5 In 0.5 P. These bulk-like spectral features are, however, due to near-surface reconstruction of Ga and In because they are effectively quenched by exposure to air. Also, the E 0 feature becomes sharper and both the E 0 and the E 1 features red-shift as the annealing process is prolonged. This indicates that this reconstruction is kinetically limited, presumably by the slow interdiffusion of Ga and In necessary to achieve the ordered bulk-like structure. copyright 1995 American Vacuum SocietyGa 0.5 In 0.5 P

Influence of low-temperature annealing on InSb properties

International Nuclear Information System (INIS)

Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

1975-01-01

Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

Intelligent medical image processing by simulated annealing

International Nuclear Information System (INIS)

Ohyama, Nagaaki

1992-01-01

Image processing is being widely used in the medical field and already has become very important, especially when used for image reconstruction purposes. In this paper, it is shown that image processing can be classified into 4 categories; passive, active, intelligent and visual image processing. These 4 classes are explained at first through the use of several examples. The results show that the passive image processing does not give better results than the others. Intelligent image processing, then, is addressed, and the simulated annealing method is introduced. Due to the flexibility of the simulated annealing, formulated intelligence is shown to be easily introduced in an image reconstruction problem. As a practical example, 3D blood vessel reconstruction from a small number of projections, which is insufficient for conventional method to give good reconstruction, is proposed, and computer simulation clearly shows the effectiveness of simulated annealing method. Prior to the conclusion, medical file systems such as IS and C (Image Save and Carry) is pointed out to have potential for formulating knowledge, which is indispensable for intelligent image processing. This paper concludes by summarizing the advantages of simulated annealing. (author)

A determination of the benefits of annealing irradiated pressure vessel weldments

International Nuclear Information System (INIS)

Lott, R.G.; Mager, T.R.

1988-01-01

The long-term benefit of annealing an irradiated reactor pressure vessel steel may be described in terms of a benefit factor, B. The benefit factor compares the mechanical properties of an annealed and reirradiated specimen with an equivalent specimen having no intermediate anneal. The benefit factor was determined using a series of microhardness specimens prepared from nuclear pressure vessel surveillance program materials. These specimens were annealed and then reirradiated in a test reactor. There was an obvious long-term benefit in the specimens annealed at 450 0 C. The long-term benefit was less obvious at 400 0 C and no significant benefit was noted at 350 0 C. The benefit factor may also be used as the basis of a surveillance program for an annealed pressure vessel. A strategy for such a surveillance program is described. (author)

The lateral In2O3 nanowires and pyramid networks manipulation by controlled substrate surface energy in annealing evolution

Science.gov (United States)

Shariati, Mohsen; Darjani, Mojtaba

2016-02-01

The continuous laterally aligned growth of In2O3 nanocrystal networks extended with nanowire and pyramid connections under annealing influence has been reported. These nanostructures have been grown on Si substrate by using oxygen-assisted annealing process through PVD growth technique. The formation of In2O3 nanocrystals has been achieved by the successive growth of critical self-nucleated condensation in three orientations. The preferred direction was the route between two pyramids especially in the smallest surface energy. The effects of substrate temperature in annealing process on the morphological properties of the as-grown nanostructures were investigated. The annealing technique showed that by controlling the surface energy, the morphology of structures was changed from unregulated array to defined nanostructures; especially nanowires 50 nm in width. The obtained nanostructures also were investigated by the (transmission electron microscopy) TEM, Raman spectrum and the (X-ray diffraction) XRD patterns. They indicated that the self-assembled In2O3 nanocrystal networks have been fabricated by the vapor-solid (VS) growth mechanism. The growth mechanism process was prompted to attribute the relationship among the kinetics parameters, surface diffusion and morphology of nanostructures.

High temperature annealing of fission tracks in fluorapatite, Santa Fe Springs oil field, Los Angeles Basin, California

Science.gov (United States)

Naeser, Nancy D.; Crowley, Kevin D.; McCulloh, Thane H.; Reaves, Chris M.; ,

1990-01-01

Annealing of fission tracks is a kinetic process dependent primarily on temperature and to a laser extent on time. Several kinetic models of apatite annealing have been proposed. The predictive capabilities of these models for long-term geologic annealing have been limited to qualitative or semiquantitative at best, because of uncertainties associated with (1) the extrapolation of laboratory observations to geologic conditions, (2) the thermal histories of field samples, and (3) to some extent, the effect of apatite composition on reported annealing temperatures. Thermal history in the Santa Fe Springs oil field, Los Angeles Basin, California, is constrained by an exceptionally well known burial history and present-day temperature gradient. Sediment burial histories are continuous and tightly constrained from about 9 Ma to present, with an important tie at 3.4 Ma. No surface erosion and virtually no uplift were recorded during or since deposition of these sediments, so the burial history is simple and uniquely defined. Temperature gradient (???40??C km-1) is well established from oil-field operations. Fission-track data from the Santa Fe Springs area should thus provide one critical field test of kinetic annealing models for apatite. Fission-track analysis has been performed on apatites from sandstones of Pliocene to Miocene age from a deep drill hole at Santa Fe Springs. Apatite composition, determined by electron microprobe, is fluorapatite [average composition (F1.78Cl0.01OH0.21)] with very low chlorine content [less than Durango apatite; sample means range from 0.0 to 0.04 Cl atoms, calculated on the basis of 26(O, F, Cl, OH)], suggesting that the apatite is not unusually resistant to annealing. Fission tracks are preserved in these apatites at exceptionally high present-day temperatures. Track loss is not complete until temperatures reach the extreme of 167-178??C (at 3795-4090 m depth). The temperature-time annealing relationships indicated by the new data

Effect of tensile stress on the annealed structure of a metallic glass

International Nuclear Information System (INIS)

Vianco, P.T.; Li, J.C.M.

1987-01-01

The low-temperature (120 0 --245 0 C) structural relaxation of Metglas/sup R/ 2826B (Ni 49 Fe 29 P 14 B 6 Si 2 ) amorphous alloy was investigated for samples subjected to a tensile stress in the range of 20--400 MPa during annealing. The stress-annealed samples demonstrated a much smaller increase of microhardness than was observed in similarly annealed ribbons without a stress. Further heat treatment of the stress-annealed specimens, this time without the stress, was capable of increasing the microhardnesses of only some ribbons to values equal to those of samples similarly heat treated initially without a stress. An additional exothermic peak in the differential scanning calorimetry (DSC) thermograms of the stress-annealed specimens indicated the presence of a more disordered structure at room temperature, which was found to correlate with the lower microhardness values. Otherwise, those artifacts of the DSC thermograms that were characteristic of samples annealed without a stress were still present in the stress-annealed ribbons. No effect on the crystallization temperature was noted but the glass transition temperature was increased in the stress-annealed case with respect to values attained when the stress was absent during heat treatment. A reduction in the degree of embrittlement of those samples annealed with a tensile stress was a further indication of more disorder in the stress-annealed ribbons

Thermoluminescence of annealed and shock-loaded feldspar

International Nuclear Information System (INIS)

Hartmetz, C.P.

1988-01-01

Samples of oligoclase and bytownite were shock-loaded to a variety of pressures, and annealed for a variety of temperatures and times. The effect of Mrad doses of gamma-rays on oligoclase TL were also studied. After these treatments, thermoluminescence (TL) and X-ray diffraction (XRD) measurements were made to: (1) determine the effects of shock on terrestrial feldspar and compare with variations in the TL emission of ordinary chondrites (OCs); (2) determine if disordering in feldspar was responsible for any related changes in TL properties of OCs; (3) determine if the combined effect of shock plus annealing causes the changes in TL properties; (4) see if radiation damage from cosmic ray exposure plays a role in the TL variations; (5) examine the implications of this work to the thermal and shock histories of OCs. The lightly shock-loaded and annealed oligoclase samples have a dominant peak temperature of 120-140 C, identical to type 3.3-3.5 OCs. The heavily shocked samples dominant peak is at 230C, similar to type > 3.5 OCs . While the heavily annealed/disordered oligoclase samples have a peak at 280C, this peak is rarely observed in OCs. Radiation damage from Mrad doses of gamma-rays produced no change in peak temperature, but facilitated the shift to higher peak temperatures. The TL sensitivity of the shocked samples decreased by a factor of 25. Samples annealed at low temperatures (438-533C) showed a factor of 2 decrease in TL, but at the highest temperatures, the TL was a factor of 8 higher

Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

Energy Technology Data Exchange (ETDEWEB)

Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

1975-01-01

The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

Defect studies in annealed ZnO by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

2008-01-30

Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO.

Defect studies in annealed ZnO by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok

2008-01-01

Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO

Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

2015-07-15

In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

International Nuclear Information System (INIS)

Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

2017-01-01

Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

Crystallinity and mechanical effects from annealing Parylene thin films

Energy Technology Data Exchange (ETDEWEB)

Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

2016-03-31

Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

International Nuclear Information System (INIS)

Biggeri, U.

1995-01-01

High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

On the annealing behaviour of dysprosium ion implanted nickel: a combined study using Rutherford backscattering, transmission electron microscopy, and total current spectroscopy

International Nuclear Information System (INIS)

Chadderton, L.T.; Johnson, E.

1977-01-01

Despite continuing improvements in applications of the analytical method of Rutherford backscattering (RBS) to solid state physics it is recognized that more complete information can be obtained if other techniques - for example transmission electron microscopy (TEM) - are employed simultaneously. Experiments are described in which a combined RBS and TEM study of the annealing of nickel, rendered amorphous by implantation of 20 keV dysprosium ions is supplemented with a completely new technique - total current spectroscopy (TCS). In TCS low energy electrons (0-15 eV) are used to probe the damaged nickel. Observations have been made during annealing of both the reappearance of the bulk band structure of the metal and of a 'surface peak' which is highly sensitive to the recovery process. Changes in the height of the surface peak reveal three sharp annealing stages, the first two being preceded by reverse annealing which correlates well with RBS and TEM results. The first annealing stage - following the amorphous to crystalline transition - may be associated with electronic effects in the vicinity of the Curie point. Changes in the position of the surface peak allow one to trace the diffusion of dysprosium to the surface. Quantum mechanical resonances at the damage/crystal interface have also been followed throughout annealing. The initially amorphous layer (approximately 2.2nm) increases in thickness slightly during recovery. (Auth.)

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

Energy Technology Data Exchange (ETDEWEB)

Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

2015-07-06

A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

Implantation annealing by scanning electron beam

International Nuclear Information System (INIS)

Jaussaud, C.; Biasse, B.; Cartier, A.M.; Bontemps, A.

1983-11-01

Samples of ion implanted silicon (BF 2 , 30keV, 10 15 ions x cm -2 ) have been annealed with a multiple scan electron beam, at temperatures ranging from 1000 to 1200 0 C. The curves of sheet resistance versus time show a minimum. Nuclear reaction measurements of the amount of boron remaining after annealing show that the increase in sheet resistance is due to a loss of boron. The increase in junction depths, measured by spreading resistance on bevels is between a few hundred A and 1000 A [fr

Enhanced dielectric and electrical properties of annealed PVDF thin film

Science.gov (United States)

Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

2018-05-01

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

On simulated annealing phase transitions in phylogeny reconstruction.

Science.gov (United States)

Strobl, Maximilian A R; Barker, Daniel

2016-08-01

Phylogeny reconstruction with global criteria is NP-complete or NP-hard, hence in general requires a heuristic search. We investigate the powerful, physically inspired, general-purpose heuristic simulated annealing, applied to phylogeny reconstruction. Simulated annealing mimics the physical process of annealing, where a liquid is gently cooled to form a crystal. During the search, periods of elevated specific heat occur, analogous to physical phase transitions. These simulated annealing phase transitions play a crucial role in the outcome of the search. Nevertheless, they have received comparably little attention, for phylogeny or other optimisation problems. We analyse simulated annealing phase transitions during searches for the optimal phylogenetic tree for 34 real-world multiple alignments. In the same way in which melting temperatures differ between materials, we observe distinct specific heat profiles for each input file. We propose this reflects differences in the search landscape and can serve as a measure for problem difficulty and for suitability of the algorithm's parameters. We discuss application in algorithmic optimisation and as a diagnostic to assess parameterisation before computationally costly, large phylogeny reconstructions are launched. Whilst the focus here lies on phylogeny reconstruction under maximum parsimony, it is plausible that our results are more widely applicable to optimisation procedures in science and industry. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

The influence of annealing in nitrogen atmosphere on the electrical, optical and structural properties of spray- deposited ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

2009-07-01

Thin-film zinc oxide (ZnO) has many applications in solar cell technology and is considered to be a candidate for the substitution of indium tin oxide and tin oxide. ZnO thin films can be prepared by thermal evaporation, rf-sputtering, atomic layer deposition, chemical vapor deposition, sol-gel, laser ablation and spray pyrolysis technique. Spray pyrolysis has received much attention because of its simplicity and low cost. In this study, large area and highly uniform polycrystalline ZnO thin films were produced by spray pyrolysis using a home-made spraying system on glass substrates at 450 degrees C. The electrical, optical and structural properties of the ZnO films were enhanced by annealing the thin films in nitrogen atmosphere. X-ray diffraction revealed that the films are polycrystalline with a hexagonal wurtzite structure. The preferential orientation did not change with annealing, but XRD patterns revealed that some very weak lines had grown. There was no noticeable increase in the grain size. The transmittance of the films increased as a result of annealing. It was concluded that post-deposition annealing is essential to improve the quality of the ZnO thin films. The electrical properties improved due to a decrease in resistivity. 13 refs., 5 figs.

Insights into post-annealing and silver doping effects on the internal microstructure of ZnO nanoparticles through X-ray diffraction probe

Science.gov (United States)

Obeydavi, Ali; Dastafkan, Kamran; Rahimi, Mohammad; Ghadam Dezfouli, Mohammad Amin

2017-07-01

ZnO nanoparticles were synthesized via Pechini method at various post-annealing temperatures (400°, 500°, and 600 °C) and silver doping concentrations (Zn:Ag molar ratios of 30, 20, and 10). Multifarious microstructural features including crystallite size, size-strain based broadening, residual stress, preferential orientation, crystallinity degree, lattice parameters, unit cell variation, and stacking fault probability were surveyed through phase analysis, Williamson-Hall plot, texture coefficient and unit cell calculations. X-ray probing verified good crystallinity with a hexagonal close pack Wurtzite morphology. Williamson-Hall analysis exhibited distributions of crystallite size and microstrain as well as their contributions on the line broadening of the host ZnO and guest Ag phases upon annealing-doping treatments. Textural analysis revealed the alteration in anisotropic crystallinity of the host phase and transformation of the preferred directions, (100) and (101), as function of annealing-doping processes. Besides, while guest Ag phase was shown to be polycrystalline with randomly orientated crystals at moderate concentration with respect to thermal treatment, preferential orientation went through a major change, (220) to (111), with increment in Ag loadings. Under identical synthetic conditions, the distinction in the lattice constants and unit cell variation between pure and doped ZnO nanoparticles was enforced and results verified major impressionability via annealing and doping factors.

Evolution of grain boundary character distributions in alloy 825 tubes during high temperature annealing: Is grain boundary engineering achieved through recrystallization or grain growth?

International Nuclear Information System (INIS)

Bai, Qin; Zhao, Qing; Xia, Shuang; Wang, Baoshun; Zhou, Bangxin; Su, Cheng

2017-01-01

Grain boundary engineering (GBE) of nickel-based alloy 825 tubes was carried out with different cold drawing deformations by using a draw-bench on a factory production line and subsequent annealing at various temperatures. The microstructure evolution of alloy 825 during thermal-mechanical processing (TMP) was characterized by means of the electron backscatter diffraction (EBSD) technique to study the TMP effects on the grain boundary network and the evolution of grain boundary character distributions during high temperature annealing. The results showed that the proportion of ∑ 3 n coincidence site lattice (CSL) boundaries of alloy 825 tubes could be increased to > 75% by the TMP of 5% cold drawing and subsequent annealing at 1050 °C for 10 min. The microstructures of the partially recrystallized samples and the fully recrystallized samples suggested that the proportion of low ∑ CSL grain boundaries depended on the annealing time. The frequency of low ∑ CSL grain boundaries increases rapidly with increasing annealing time associating with the formation of large-size highly-twinned grains-cluster microstructure during recrystallization. However, upon further increasing annealing time, the frequency of low ∑ CSL grain boundaries decreased markedly during grain growth. So it is concluded that grain boundary engineering is achieved through recrystallization rather than grain growth. - Highlights: •The grain boundary engineering (GBE) is applicable to 825 tubes. •GBE is achieved through recrystallization rather than grain growth. •The low ∑ CSL grain boundaries in 825 tubes can be increased to > 75%.

Laser-annealed GaP OHMIC contacts for high-temperature devices

International Nuclear Information System (INIS)

Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

1980-01-01

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

Visible light emission from silicon implanted and annealed SiO2layers

International Nuclear Information System (INIS)

Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

1997-01-01

Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed

A study on low temperature transformation ferrite in ultra low carbon IF steels (I) - effects of manganese and annealing conditions

International Nuclear Information System (INIS)

Jeong, Woo Chang; Lee, Jae Yeon; Jin, Young Sool

2001-01-01

An investigation was made to determine the effects of Mn content and annealing conditions on the formation of the low temperature transformation products in ultra low carbon interstitial free steels. With increasing the Mn content, yield and tensile strengths increased, but yield ratio decreased. The Mn was found to be effective to decrease the yield point elongation, causing continuous yielding in 3% Mn steel. Low temperature transformation ferrites such as quasi-polygonal ferrite, granular bainitic ferrite, and bainitic ferrite more easily formed with higher Mn content, higher annealing temperature, longer annealing time, and faster cooling rate. Polygonal ferrite grain was readily identified in the light microscope and was characterized by the polyhedral and equiaxed shape while quasi-polygonal ferrite showed the irregular changeful grain boundaries. It was found that both granular bainitic and bainitic ferrites revealed some etching evidence of substructures in the light microscope

Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

International Nuclear Information System (INIS)

Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

2007-01-01

Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

On the formation of continuous spectrum and emission line profiles of P Cygni

International Nuclear Information System (INIS)

Nugis, T.; Kolka, I.; Lund, L.

1979-01-01

The attempts to interpret the values of the observed radio and infrared fluxes of P Cygni via simple mass outflow models lead to a strong discrepancy between the observed and the calculated values. Barlow and Cohen (1977) found also that constant velocity or usual radiative acceleration outflow models cannot explain the observed continuous spectra. They concluded that a more 'extended' acceleration law is needed to fit the observed and the calculated ratio and IR fluxes - a law by which the acceleration of matter takes place also at a comparatively large distance from the star. The present authors analyze such types of expanding envelope models which can explain the shape of line profiles in the spectrum of P Cygni. (Auth.)

Annealing effects in low upper-shelf welds (series 9)

International Nuclear Information System (INIS)

Iskander, S.K.; Nanstad, R.K.

1995-01-01

The purpose of the Ninth Irradiation Series is to evaluate the correlation between fracture toughness and CVN impact energy during irradiation, annealing, and reirradiation (IAR). Results of annealing CVN specimens from the low-USE welds from the Midland beltline and nozzle course welds, as well as HSST plate 02 and HSSI weld 73W are given. Also presented is the effect of annealing on the initiation fracture toughness of annealed material from Midland beltline weld and HSST plate 02. The results from capsule 10-5 specimens of weld 73W confirm those previously obtained on the so-called undersize specimens that were irradiated in the Fifth Irradiation Series, namely that the recovery due to annealing at 343 degrees C (650 degrees F) for 1 week is insignificant. The fabrication of major components for the IAR facility for two positions on the east side of the FNR at the University of Michigan has begun. Fabrication of two reusable capsules (one for temperature verification and the other for dosimetry verification), as well as two capsules for IAR, studies is also under way. The design of a reusable capsule capable of reirradiating previously irradiated and annealed CVN and 1T C(T) specimens is also progressing. The data acquisition and control (DAC) instrumentation for the first two IAR facilities is essentially complete and awaiting completion of the IAR facilities and temperature test capsule for checkout and control algorithm development

Dependence of high density nitrogen-vacancy center ensemble coherence on electron irradiation doses and annealing time

Science.gov (United States)

Zhang, C.; Yuan, H.; Zhang, N.; Xu, L. X.; Li, B.; Cheng, G. D.; Wang, Y.; Gui, Q.; Fang, J. C.

2017-12-01

Negatively charged nitrogen-vacancy (NV-) center ensembles in diamond have proved to have great potential for use in highly sensitive, small-package solid-state quantum sensors. One way to improve sensitivity is to produce a high-density NV- center ensemble on a large scale with a long coherence lifetime. In this work, the NV- center ensemble is prepared in type-Ib diamond using high energy electron irradiation and annealing, and the transverse relaxation time of the ensemble—T 2—was systematically investigated as a function of the irradiation electron dose and annealing time. Dynamical decoupling sequences were used to characterize T 2. To overcome the problem of low signal-to-noise ratio in T 2 measurement, a coupled strip lines waveguide was used to synchronously manipulate NV- centers along three directions to improve fluorescence signal contrast. Finally, NV- center ensembles with a high concentration of roughly 1015 mm-3 were manipulated within a ~10 µs coherence time. By applying a multi-coupled strip-lines waveguide to improve the effective volume of the diamond, a sub-femtotesla sensitivity for AC field magnetometry can be achieved. The long-coherence high-density large-scale NV- center ensemble in diamond means that types of room-temperature micro-sized solid-state quantum sensors with ultra-high sensitivity can be further developed in the near future.

Thermal design and analysis of the HTGR fuel element vertical carbonizing and annealing furnace

International Nuclear Information System (INIS)

Llewellyn, G.H.

1977-06-01

Computer analyses of the thermal design for the proposed HTGR fuel element vertical carbonizing and annealing furnace were performed to verify its capability and to determine the required power input and distribution. Although the furnace is designed for continuous operation, steady-state temperature distributions were obtained by assuming internal heat generation in the fuel elements to simulate their mass movement. The furnace thermal design, the analysis methods, and the results are discussed herein

Kinetics of annealing of irradiated surveillance pressure vessel steel

International Nuclear Information System (INIS)

Harvey, D.J.; Wechsler, M.S.

1982-01-01

Indentation hardness measurements as a function of annealing were made on broken halves of Charpy impact surveillance samples. The samples had been irradiated in commercial power reactors to a neutron fluence of approximately 1 x 10 18 neutrons per cm 2 , E > 1 MeV, at a temperature of about 300 0 C (570 0 F). Results are reported for the weld metal, which showed greater radiation hardening than the base plate or heat-affected zone material. Isochronal and isothermal anneals were conducted on the irradiated surveillance samples and on unirradiated control samples. No hardness changes upon annealing occurred for the control samples. The recovery in hardness for the irradiated samples took place mostly between 400 and 500 0 C. Based on the Meechan-Brinkman method of analysis, the activation energy for annealing was found to be 0.60 +- 0.06 eV. According to computer simulation calculations of Beeler, the activation energy for migration of vacancies in alpha iron is about 0.67 eV. Therefore, the results of this preliminary study appear to be consistent with a mechanism of annealing of radiation damage in pressure vessel steels based on the migration of radiation-produced lattice vacancies

Annealing evolutionary stochastic approximation Monte Carlo for global optimization

KAUST Repository

Liang, Faming

2010-01-01

outperform simulated annealing, the genetic algorithm, annealing stochastic approximation Monte Carlo, and some other metaheuristics in function optimization. © 2010 Springer Science+Business Media, LLC.

Structural relaxation in annealed hyperquenched basaltic glasses

DEFF Research Database (Denmark)

Guo, Xiaoju; Mauro, John C.; Potuzak, M.

2012-01-01

The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

Use of superheated steam to anneal the reactor pressure vessel

International Nuclear Information System (INIS)

Porowski, J.S.

1994-01-01

Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 degrees F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 degrees F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors

Pulsed electron-beam annealing of selenium-implanted gallium arsenide

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.

1979-01-01

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

Comparative studies of laser annealing technique and furnace annealing by X-ray diffraction and Raman analysis of lithium manganese oxide thin films for lithium-ion batteries

International Nuclear Information System (INIS)

Pröll, J.; Weidler, P.G.; Kohler, R.; Mangang, A.; Heißler, S.; Seifert, H.J.; Pfleging, W.

2013-01-01

The structure and phase formations of radio frequency magnetron sputtered lithium manganese oxide thin films (Li 1.1 Mn 1.9 O 4 ) under ambient air were studied. The influence of laser annealing and furnace annealing, respectively, on the bulk structure and surface phases was compared by using ex-situ X-ray diffraction and Raman analysis. Laser annealing technique formed a dominant (440)-reflection, furnace annealing led to both, (111)- and (440)-reflections within a cubic symmetry (S.G. Fd3m (227)). Additionally, in-situ Raman and in-situ X-ray diffraction were applied for online detection of phase transformation temperatures. In-situ X-ray diffraction measurements clearly identified the starting temperature for the (111)- and (440)-reflections around 525 °C and 400 °C, respectively. The 2θ Bragg peak positions of the characteristic (111)- and (440)-reflections were in good agreement with those obtained through conventional furnace annealing. Laser annealing of lithium manganese oxide films provided a quick and efficient technique and delivered a dominant (440)-reflection which showed the expected electrochemical behavior of the well-known two-step de-/intercalation process of lithium-ions into the cubic spinel structure within galvanostatic testing and cyclic voltammetry. - Highlights: ► Formation of cubic spinel-like phase of Li–Mn–O thin films by rapid laser annealing ► Laser annealing at 680 °C and 100 s was demonstrated as quick crystallization method. ► 400 °C was identified as characteristic onset temperature for (440)-reflex formation

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Toward understanding dynamic annealing processes in irradiated ceramics

Energy Technology Data Exchange (ETDEWEB)

Myers, Michael Thomas [Texas A & M Univ., College Station, TX (United States)

2013-05-01

High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable postirradiation disorder in ion-beam-processing of semiconductors, and determines the “radiation tolerance” of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken.

The effect of humidity on annealing of polymer optical fibre bragg gratings

DEFF Research Database (Denmark)

Woyessa, Getinet; Nielsen, Kristian; Bang, Ole

2015-01-01

The effect of humidity on annealing of PMMA based microstructured polymer optical fiber (mPOF) Bragg gratings is studied. Polymer optical fibers (POFs) are annealed in order to release stress formed during the fabrication process. Un-annealed fibers will have high hysteresis and low sensitivity...... to humidity, particularly when operated at high temperature. Typically annealing of PMMA POFs is done at 80oC in an oven with no humidity control and therefor at low humidity. The response to humidity of PMMA FBGs annealed at different levels of humidity at the same temperature has also been studied. PMMA...

Production and beam annealing of damage in carbon implanted silicon

International Nuclear Information System (INIS)

Kool, W.H.; Roosendaal, H.E.; Wiggers, L.W.; Saris, F.W.

1978-01-01

The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H + and He + beams in the energy interval 30 to 200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to a quantity introduced in an earlier paper in order to describe saturation effects in the damage production after H + or He + impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction. (author)

The precipitation in annealing and its effect on permittivity of Fe–Si–Al powders

International Nuclear Information System (INIS)

Li, Gang; Cui, Yin; Zhang, Nan; Wang, Xin; Xie, Jian Liang

2016-01-01

SEM images show that some precipitates distributed on the surface of as-annealed Fe–Si–Al powders. Subsequent experimental results indicate that both morphology and microstructure of as-annealed Fe–Si–Al powders change with increasing annealing temperature. Meanwhile, dielectric properties analysis suggesting that both real part ε′ and imaginary part ε″ of the Fe–Si–Al powders decrease significantly after annealed at 450 °C or higher temperature. We assume that it’s the precipitates with low electrical conductivity developed on the surface of powders that increase the surface resistivity of as-annealed powders and leading to a lower imagine part of permittivity. The drop of real part ε′ ascribed to the weakened interfacial polarization which resulted from the decrease of structural defects such as grain boundaries and interfaces during annealing process. - Highlights: • As-milled Fe–Si–Al powders were annealed at various temperature. • The change of morphology and microstructure of as-annealed Fe–Si–Al was examined. • Complex permittivity decrease significantly after annealed over 400 °C and permeability increase as annealing temperature rises. • The precipitation process in annealing and its effect on permittivity were analyzed.

Annealing of hydrogen-induced defects in RF-plasma-treated Si wafers: ex situ and in situ transmission electron microscopy studies

International Nuclear Information System (INIS)

Ghica, C; Nistor, L C; Vizireanu, S; Dinescu, G

2011-01-01

The smart-cut(TM) process is based on inducing and processing structural defects below the free surface of semiconductor wafers. The necessary defects are currently induced by implantation of light elements such as hydrogen or helium. An alternative softer way to induce shallow subsurface defects is by RF-plasma hydrogenation. To facilitate the smart-cut process, the wafers containing the induced defects need to be subjected to an appropriate thermal treatment. In our experiments, (0 0 1) Si wafers are submitted to 200 and 50 W hydrogen RF-plasma and are subsequently annealed. The samples are studied by transmission electron microscopy (TEM), before and after annealing. The plasma-introduced defects are {1 1 1} and {1 0 0} planar-like defects and nanocavities, all of them involving hydrogen. Many nanocavities are aligned into strings almost parallel to the wafer surface. The annealing is performed either by furnace thermal treatment at 550 deg. C, or by in situ heating in the electron microscope at 450, 650 and 800 deg. C during the TEM observations. The TEM microstructural studies indicate a partial healing of the planar defects and a size increase of the nanometric cavities by a coalescence process of the small neighbouring nanocavities. By annealing, the lined up nanometric voids forming chains in the as-hydrogenated sample coalesced into well-defined cracks, mostly parallel to the wafer surface.

Plasma assisted heat treatment: annealing

International Nuclear Information System (INIS)

Brunatto, S F; Guimaraes, N V

2009-01-01

This work comprises a new dc plasma application in the metallurgical-mechanical field, called plasma assisted heat treatment, and it presents the first results for annealing. Annealing treatments were performed in 90% reduction cold-rolled niobium samples at 900 deg. C and 60 min, in two different heating ways: (a) in a hollow cathode discharge (HCD) configuration and (b) in a plasma oven configuration. The evolution of the samples' recrystallization was determined by means of the microstructure, microhardness and softening rate characterization. The results indicate that plasma species (ions and neutrals) bombardment in HCD plays an important role in the recrystallization process activation and could lead to technological and economical advantages considering the metallic materials' heat treatment application. (fast track communication)

Pulsed Q-switched ruby laser annealing of Bi implanted Si crystals investigated by channeling

International Nuclear Information System (INIS)

Deutch, B.I.; Shih-Chang, T.; Shang-Hwai, L.; Zu-Yao, Z.; Jia-Zeng, H.; Ren-Zhi, D.; Te-Chang, C.; De-Xin, C.

1979-01-01

Channeling was used to investigate pulsed, Q switched ruby-laser annealed and thermally annealed Si single crystals implanted with 40-keV Bi ions to a dose of 10 15 atoms/cm 2 . After thermal annealing, residual damage decreased with increasing annealing temperature to a minimum value of 30% at 900 0 C. The Bi atoms in substitutional sites reached a maximum value (50%) after annealing at 750 0 C but decreased with increasing annealing temperature. Out diffusion of Bi atoms occurred at temperatures higher than 625 0 C. For comparison, the residual damage disappeared almost completely after pulsed-laser annealing (30 ns pulse width, Energy, E = 3J/cm 2 ). The concentration of Bi in Si exceeded its solid solubility by an order of magnitude; 95% of Bi atoms were annealed to substitutional sites. Laser pulses of different energies were used to investigate the efficiency of annealing. (author)

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

Defect annealing in Mn/Fe-implanted TiO2 (rutile)

International Nuclear Information System (INIS)

Gunnlaugsson, H P; Svane, A; Weyer, G; Mantovan, R; Masenda, H; Naidoo, D; Mølholt, T E; Gislason, H; Ólafsson, S; Johnston, K; Bharuth-Ram, K; Langouche, G

2014-01-01

A study of the annealing processes and charge state of dilute Fe in rutile TiO 2 single crystals was performed in the temperature range 143–662 K, utilizing online 57 Fe emission Mössbauer spectroscopy following low concentrations (<10 −3  at%) implantation of 57 Mn (T 1/2  = 1.5 min). Both Fe 3+ and Fe 2+ were detected throughout the temperature range. Three annealing stages were distinguished: (i) a broad annealing stage below room temperature leading to an increased Fe 3+ fraction; (ii) a sharp annealing stage at ∼330 K characterized by conversion of Fe 3+ to Fe 2+ and changes in the hyperfine parameters of Fe 2+ , attributed to the annealing of Ti vacancies in the vicinity of the probe atoms; and (iii) an annealing stage in the temperature range from 550 to 600 K, where all Fe ions are transformed to Fe 3+ , attributed to the annealing of the nearby O vacancies. The dissociation energy of Mn Ti –V O pairs was estimated to be 1.60(15) eV. Fe 2+ is found in an environment where it can probe the lattice structure through the nuclear quadrupole interaction evidencing the extreme radiation hardness of rutile TiO 2 . Fe 3+ is found in a paramagnetic state with slow spin–lattice relaxation which follows a ∼T n temperature dependence with 4.1 < n < 6.3 at T > 350 K. (paper)

Effects of annealing on evaporated SnS thin films

International Nuclear Information System (INIS)

Samsudi Sakrani; Bakar Ismail

1994-01-01

The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

Effects of annealing on evaporated SnS thin films

Energy Technology Data Exchange (ETDEWEB)

Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

1994-12-31

The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

Improved luminescence properties of nanocrystalline silicon based electroluminescent device by annealing

International Nuclear Information System (INIS)

Sato, Keisuke; Hirakuri, Kenji

2006-01-01

We report an annealing effect on electrical and luminescence properties of a red electroluminescent device consisting of nanocrystalline silicon (nc-Si). The red luminescence was generated by flowing the forward current into the device at a low threshold direct current (DC) forward voltage with a rise of annealing temperature up to 500 deg. C. Moreover, the luminescence of the device annealed at 500 deg. C was more intense than that of the device annealed at 200 deg. C or less under the same forward current density, because of the injection of a large quantity of carriers to the radiative recombination centers at the nc-Si surface vicinity. These were attained by a low resistivity of indium tin oxide (ITO) electrode and good contact at the ITO electrode/luminous layer interface region by the annealing treatment. The above results indicated that the annealing treatment of the device is effective for the realization of high luminance due to the improvement in the injection efficiency of carriers to the radiative recombination centers

Correlating defect density with growth time in continuous graphene films.

Science.gov (United States)

Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

2014-12-01

We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

Superheated steam annealing of pressurized water reactor vessel

International Nuclear Information System (INIS)

Porowski, J.S.

1993-01-01

Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 deg. F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 deg. F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors. Dry thermal annealing consists of heating portions of the reactor vessel at a specific temperature for a given period of time using a high temperature heat source. The use of spent fuel assemblies, induction heating and resistance heating elements as well as the circulation of heated fluid were investigated as potential candidate methods. To date the use of resistance heating elements which are lowered into a dry empty reactor was considered to be the preferred method. In-depth research in the United States and practical applications of such a method in Russia have confirmed feasibility of the method. The method of using circulating superheated steam to anneal the vessel at 850 deg. F without complete removal of the reactor internals is described herein. After removing the reactor head and fuel, the core barrel along with the upper and lower core in PWRs is lifted to open an annular space between the reactor shell flange and the core barrel flange. The thermal shield can remain

Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor

Science.gov (United States)

Rolim, Guilherme Koszeniewski; Corrêa, Silma Alberton; Galves, Lauren Aranha; Lopes, João Marcelo J.; Soares, Gabriel Vieira; Radtke, Cláudio

2018-01-01

Modifications of single layer graphene transferred to SiO2/Si substrates resulting from annealing in water vapor were investigated. Near edge X-ray absorption fine structure spectroscopy evidenced graphene puckering between 400 and 500 °C. Synchrotron radiation based X-ray photoelectron spectroscopy showed variation of sp2 and sp3C bonding configurations specially in this same temperature range. Moreover, oxygen related functionalities are formed as a result of water vapor annealing. Based on these results and complementary Raman and nuclear reaction analysis, one distinguishes three different regimes of water interaction with graphene concerning modifications of the graphene layer. In the low temperature range (200-400 °C), no prominent modification of graphene itself is observed. At higher temperatures (400-500 °C), to accommodate newly formed oxygen functionalities, the flat and continuous sp2 bonding network of graphene is disrupted, giving rise to a puckered layer. For 600 °C and above, shrinking of graphene domains and a higher doping level take place.

Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

Energy Technology Data Exchange (ETDEWEB)

Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

2015-08-15

Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

Study of paramagnetic defect centers in as-grown and annealed TiO2 anatase and rutile nanoparticles by a variable-temperature X-band and high-frequency (236 GHz) EPR.

Science.gov (United States)

Misra, S K; Andronenko, S I; Tipikin, D; Freed, J H; Somani, V; Prakash, Om

2016-03-01

Detailed EPR investigations on as-grown and annealed TiO 2 nanoparticles in the anatase and rutile phases were carried out at X-band (9.6 GHz) at 77, 120-300 K and at 236 GHz at 292 K. The analysis of EPR data for as-grown and annealed anatase and rutile samples revealed the presence of several paramagnetic centers: Ti 3+ , O - , adsorbed oxygen (O 2 - ) and oxygen vacancies. On the other hand, in as-grown rutile samples, there were observed EPR lines due to adsorbed oxygen (O 2 - ) and the Fe 3+ ions in both Ti 4+ substitutional positions, with and without coupling to an oxygen vacancy in the near neighborhood. Anatase nanoparticles were completely converted to rutile phase when annealed at 1000° C, exhibiting EPR spectra similar to those exhibited by the as-grown rutile nanoparticles. The high-frequency (236 GHz) EPR data on anatase and rutile samples, recorded in the region about g = 2.0 exhibit resolved EPR lines, due to O - and O 2 - ions enabling determination of their g-values with higher precision, as well as observation of hyperfine sextets due to Mn 2+ and Mn 4+ ions in anatase.

The effect of electrochemical CO annealing on platinum–cobalt nanoparticles in acid medium and their correlation to the oxygen reduction reaction

International Nuclear Information System (INIS)

Ciapina, Eduardo G.; Ticianelli, Edson A.

2011-01-01

Highlights: ► Modification of the surface properties of Pt 3 Co/C electrocatalyst. ► Electrochemical CO annealing in acid media generated a Pt-rich surface. ► In situ XAS revealed modifications in the Pt 5d band occupancy after CO annealing. ► The CO-annealed sample exhibited stronger interaction with oxygenated species. ► Increased Pt utilization in the CO-annealed Pt 3 Co/C electrocatalyst. - Abstract: This paper describes a modification of the surface properties of a carbon-supported Pt 3 Co catalyst resulting from an electrochemical cycling treatment in a 0.1 M HClO 4 and in a CO-saturated 0.1 M HClO 4 solution (electrochemical CO-annealing). The procedure generated a Pt-rich surface with electrochemical properties different from that presented by the as-received (untreated) sample. This was evidenced by a shift in the CO stripping peak to more positive potentials in the CO stripping voltammetry, and by an increased charge of H upd region and a modification of the oxide reduction peak observed in the base cyclic voltammogram. In situ X-ray absorption spectroscopy experiments conducted in the dispersive mode revealed differences in the electronic 5d band occupancy after the CO annealing, whereas the behavior of the intensity of the white-line as function of the potential for this material approached that found for pure Pt/C nanoparticles, in contrast to the small potential dependence profile exhibited by the as-received Pt 3 Co nanoparticles. Mass activities towards the oxygen reduction reaction measured by rotating disk experiments carried out at 1600 rpm in a O 2 -saturated solution at 25 °C increased from 0.10 A/mg of Pt to 0.19 A/mg of Pt, evidencing the higher Pt utilization in the CO-annealed Pt 3 Co/C electrocatalyst. The origin of the different electrochemical behavior is discussed.

Analysis of optimisation method for a two-stroke piston ring using the Finite Element Method and the Simulated Annealing Method

Science.gov (United States)

Kaliszewski, M.; Mazuro, P.

2016-09-01

Simulated Annealing Method of optimisation for the sealing piston ring geometry is tested. The aim of optimisation is to develop ring geometry which would exert demanded pressure on a cylinder just while being bended to fit the cylinder. Method of FEM analysis of an arbitrary piston ring geometry is applied in an ANSYS software. The demanded pressure function (basing on formulae presented by A. Iskra) as well as objective function are introduced. Geometry definition constructed by polynomials in radial coordinate system is delivered and discussed. Possible application of Simulated Annealing Method in a piston ring optimisation task is proposed and visualised. Difficulties leading to possible lack of convergence of optimisation are presented. An example of an unsuccessful optimisation performed in APDL is discussed. Possible line of further optimisation improvement is proposed.

Considerable improvement in the stability of solution processed small molecule OLED by annealing

Energy Technology Data Exchange (ETDEWEB)

Mao Guilin [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Wu Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); He Qiang [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Department of UAV, Wuhan Ordnance Noncommissioned Officers Academy, Wuhan, 430075 (China); Jiao Bo; Xu Guojin; Hou Xun [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Chen Zhijian; Gong Qihuang [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing, 100871 (China)

2011-06-15

We investigated the annealing effect on solution processed small organic molecule organic films, which were annealed with various conditions. It was found that the densities of the spin-coated (SC) films increased and the surface roughness decreased as the annealing temperature rose. We fabricated corresponding organic light emitting diodes (OLEDs) by spin coating on the same annealing conditions. The solution processed OLEDs show the considerable efficiency and stability, which were prior or equivalent to the vacuum-deposited (VD) counterparts. Our research shows that annealing process plays a key role in prolonging the lifetime of solution processed small molecule OLEDs, and the mechanism for the improvement of the device performance upon annealing was also discussed.

Annealed silver-islands for enhanced optical absorption in organic solar cell

Energy Technology Data Exchange (ETDEWEB)

Otieno, Francis, E-mail: frankotienoo@gmail.com [Material Physics Research Institute, School of Physics, University of the Witwatersrand, Private Bag 3, Wits, 2050Johannesburg (South Africa); Materials for Energy Research Group, University of the Witwatersrand, Private Bag 3, Wits, 2050 Johannesburg (South Africa); Airo, Mildred [School of Chemistry, University of the Witwatersrand, Private Bag 3, Wits, 2050 (South Africa); Ranganathan, Kamalakannan [School of Chemistry, University of the Witwatersrand, Private Bag 3, Wits, 2050 (South Africa); DST-NRF Centre of Strong Materials and the Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, 2193 Johannesburg (South Africa); Wamwangi, Daniel [Material Physics Research Institute, School of Physics, University of the Witwatersrand, Private Bag 3, Wits, 2050Johannesburg (South Africa); Materials for Energy Research Group, University of the Witwatersrand, Private Bag 3, Wits, 2050 Johannesburg (South Africa)

2016-01-01

Silver nano-islands are explored for enhancing optical absorption and photo-conversion efficiency in organic solar cells (OSCs) based on the surface plasmon resonance effect under diverse annealing conditions. Ag nano-islands have been deposited by RF magnetron sputtering at 15 W for 10 s and subsequently annealed between 100 °C–250 °C in air and Argon ambient. The optical properties of the reconstructed Ag islands demonstrate an increase and a blue shift in the absorption bands with increasing annealing temperature. This is the localized surface plasmon effect due to the Ag islands of diverse sizes, shapes and coverages. The increase in optical absorption with temperature is attributed to changes in island shape and density as collaborated by atomic force microscopy and TEM. As a proof of concept, an organic solar cell was characterized for current–voltage (I–V) measurements under dark and under solar simulated white light. Incorporation of annealed Ag islands has yielded an efficiency increment of between 4–24%. - Highlights: • RF Sputtering can be used to produce Ag NPs at low power. • Annealing enhances size, shape reconstruction as well as inter-particle separation. • Annealing in Argon ambient is more suitable than in air. • Ag NPs annealed at 250 °C enhances device absorption and PCE by up to 24%.

Effect of heat moisture treatment and annealing on physicochemical ...

African Journals Online (AJOL)

Red sorghum starch was physically modified by annealing and heat moisture treatment. The swelling power and solubility increased with increasing temperature range (60-90°), while annealing and heatmoisture treatment decreased swelling power and solubility of starch. Solubility and swelling were pH dependent with ...

High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

Science.gov (United States)

Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

2018-08-15

Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Energy Technology Data Exchange (ETDEWEB)

Hlatshwayo, T.T., E-mail: thulani.hlatshwayo@up.ac.za [Physics Department, University of Pretoria, Pretoria (South Africa); Sebitla, L.D. [Physics Department, University of Pretoria, Pretoria (South Africa); Physics Department, University of Botswana, Gaborone (Botswana); Njoroge, E.G.; Mlambo, M.; Malherbe, J.B. [Physics Department, University of Pretoria, Pretoria (South Africa)

2017-03-15

The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 10{sup 16} ions/cm{sup 2} and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

Damage recovery in ZnO by post-implantation annealing

International Nuclear Information System (INIS)

Audren, A.; Hallen, A.; Linnarsson, M.K.; Possnert, G.

2010-01-01

ZnO bulk samples were implanted with 200 keV-Co ions at room temperature with two fluences, 1 x 10 16 and 8 x 10 16 cm -2 , and then annealed in air for 30 min at different temperatures up to 900 o C. After the implantation and each annealing step, the samples were analyzed by Rutherford backscattering spectrometry (RBS) in random and channeling directions to follow the evolution of the disorder profile. The RBS spectra reveal that disorder is created during implantation in proportion to the Co fluence. The thermal treatments induce a disorder recovery, which is however, not complete after annealing at 900 o C, where about 15% of the damage remains. To study the Co profile evolution during annealing, the samples were, in addition to RBS, characterized by secondary ion mass spectrometry (SIMS). The results show that Co diffusion starts at 800 o C, but also that a very different behavior is seen for Co concentrations below and above the solubility limit.

Structural evolution of tunneling oxide passivating contact upon thermal annealing.

Science.gov (United States)

Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

2017-10-16

We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

cw argon laser annealing of anodic oxide on GaAs

International Nuclear Information System (INIS)

Chakravarti, S.N.; Das, P.; Webster, R.T.; Bhat, K.N.

1981-01-01

Anodic oxide films (850 +- 50 A thick) grown on n + (100) bulk GaAs were subjected to selective area annealing using a cw argon laser operating at an output power of 1.2 W. Capacitance-voltage (C-V) measurements performed on Al-anodic oxide-GaAs MOS capacitor structures show that laser-annealed capacitor dots have greatly reduced field-induced hysteresis effects in their capacitance-voltage characteristics compared to the unannealed ones. The oxide leakage current also shows a significant improvement: the leakage current magnitude of MOS capacitors in laser-annealed oxide island is over four orders of magnitude less than the oxide region which was not exposed to the laser radiation. Dielectric breakdown measurement indicates that laser-annealed capacitors have considerably higher breakdown voltages, about a factor of 2 higher than the unannealed capacitors

Annealing behaviour of excess carriers in neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Maekawa, T.; Nogami, S.; Inoue, S.

1993-01-01

In neutron-transmutation-doped silicon wafers excess carriers are clearly generated over the transmuted phosphorus atoms. The generation occurs for annealing temperatures above 900 o C. The maximum percentage of excess carriers obtained is about 24.5% of the final carrier concentration. Due to the difference in energy of generation and removal, the excess carriers can be removed by annealing above 800 o C. The radiation damage responsible for generation of excess carriers is fairly thermostable in the range of annealing temperatures below 800 o C. From deep-level transient spectroscopy measurements, it is found that the radiation damage remains insensitive to changes in carrier concentration. The activation energies of excess carrier generation and removal are estimated from the analysis of the thermal and temporal behaviours of radiation damage in the annealing process. (Author)

Positron annihilation spectroscopy study on annealing effect of CuO nanoparticles

International Nuclear Information System (INIS)

Shi, Jianjian; Wang, Jiaheng; Yang, Wei; Zhu, Zhejie; Wu, Yichu

2016-01-01

The microstructure and defects of CuO nanoparticles under isochronal annealing were investigated by positron annihilation spectroscopy (PAS), X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD and SEM results indicated that the average grain sizes of CuO nanoparticles grew slowly below 800 °C, and then increased rapidly with the annealing temperature from 800 to 1000 °C. Positron lifetime analysis exhibited that positrons were mainly annihilated in mono-vacancies (V Cu , V O ) and vacancy clusters when annealing from 200 to 800 °C. Furthermore, W-S plot of Doppler broadening spectra at different annealing temperatures found that the (W, S) points distributed on two different defect species, which suggested that V − Cu - V + O complexes were produced when the grains grew to bigger size after annealing above 800 °C, and positrons might annihilate at these complexes. (author)

Positron annihilation spectroscopy study on annealing effect of CuO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Shi, Jianjian; Wang, Jiaheng; Yang, Wei; Zhu, Zhejie; Wu, Yichu, E-mail: ycwu@whu.edu.cn [School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University (WHU), Wuhan (China)

2016-03-15

The microstructure and defects of CuO nanoparticles under isochronal annealing were investigated by positron annihilation spectroscopy (PAS), X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD and SEM results indicated that the average grain sizes of CuO nanoparticles grew slowly below 800 °C, and then increased rapidly with the annealing temperature from 800 to 1000 °C. Positron lifetime analysis exhibited that positrons were mainly annihilated in mono-vacancies (V{sub Cu}, V{sub O}) and vacancy clusters when annealing from 200 to 800 °C. Furthermore, W-S plot of Doppler broadening spectra at different annealing temperatures found that the (W, S) points distributed on two different defect species, which suggested that V{sup −}{sub Cu} - V{sup +}{sub O} complexes were produced when the grains grew to bigger size after annealing above 800 °C, and positrons might annihilate at these complexes. (author)

Enhanced antiadhesive properties of chitosan/hyaluronic acid polyelectrolyte multilayers driven by thermal annealing: Low adherence for mammalian cells and selective decrease in adhesion for Gram-positive bacteria.

Science.gov (United States)

Muzzio, Nicolás E; Pasquale, Miguel A; Diamanti, Eleftheria; Gregurec, Danijela; Moro, Marta Martinez; Azzaroni, Omar; Moya, Sergio E

2017-11-01

The development of antifouling coatings with restricted cell and bacteria adherence is fundamental for many biomedical applications. A strategy for the fabrication of antifouling coatings based on the layer-by-layer assembly and thermal annealing is presented. Polyelectrolyte multilayers (PEMs) assembled from chitosan and hyaluronic acid were thermally annealed in an oven at 37°C for 72h. The effect of annealing on the PEM properties and topography was studied by atomic force microscopy, ζ-potential, circular dichroism and contact angle measurements. Cell adherence on PEMs before and after annealing was evaluated by measuring the cell spreading area and aspect ratio for the A549 epithelial, BHK kidney fibroblast, C2C12 myoblast and MC-3T3-E1 osteoblast cell lines. Chitosan/hyaluronic acid PEMs show a low cell adherence that decreases with the thermal annealing, as observed from the reduction in the average cell spreading area and more rounded cell morphology. The adhesion of S. aureus (Gram-positive) and E. coli (Gram-negative) bacteria strains was quantified by optical microscopy, counting the number of colony-forming units and measuring the light scattering of bacteria suspension after detachment from the PEM surface. A 20% decrease in bacteria adhesion was selectively observed in the S. aureus strain after annealing. The changes in mammalian cell and bacteria adhesion correlate with the changes in topography of the chitosan/hyaluronic PEMs from a rough fibrillar 3D structure to a smoother and planar surface after thermal annealing. Copyright © 2017. Published by Elsevier B.V.

Annealing effects of ZnO nanorods on dye-sensitized solar cell efficiency

Energy Technology Data Exchange (ETDEWEB)

Chung, Jooyoung; Lee, Juneyoung [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.k [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of)

2010-06-01

Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanorod arrays vertically grown on fluorine-doped tin oxide (FTO) glass using a low-temperature hydrothermal method. When the ZnO seed layer was annealed, greater DSSC efficiency was obtained. This may be attributed to the improvement of adhesion between the FTO and the seed layer and the corresponding effective growth of the ZnO nanorods. The DSSCs fabricated using ZnO nanorods which underwent annealing were more efficient than those that did not undergo annealing. The ZnO nanorods which were annealed in N{sub 2}/H{sub 2} or O{sub 2} had increased dye loadings due to higher OH concentrations on the hydrophilic surface, which contributed to the improved DSSC efficiency. The fill factor increased after the annealing of the ZnO nanorods, potentially due to the improved crystallinity of the ZnO nanorods. In this study, annealing of both the seed layer and the ZnO nanorods resulted in the greatest DSSC efficiency.

Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Chu, K.-T.; Jin, Z Q; Chakka, Vamsi M; Liu, J P [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

2005-11-21

A systematic study of heat treatments and magnetic hardening of NdFeB-based melt-spun nanocomposite ribbons have been carried out. Comparison was made between samples treated by rapid thermal annealing and by conventional furnace annealing. Heating rates up to 200 K s{sup -1} were adopted in the rapid thermal processing. It was observed that magnetic hardening can be realized in an annealing time as short as 1 s. Coercivity of 10.2 kOe in the nanocomposites has been obtained by rapid thermal annealing for 1 s, and prolonged annealing did not give any increase in coercivity. Detailed results on the effects of annealing time, temperature and heating rate have been obtained. The dependence of magnetic properties on the annealing parameters has been investigated. Structural characterization revealed that there is a close correlation between magnetic hardening and nanostructured morphology. The coercivity mechanism was also studied by analysing the magnetization minor loops.

Temper embrittlement, irradiation induced phosphorus segregation and implications for post-irradiation annealing of reactor pressure vessels

International Nuclear Information System (INIS)

McElroy, R.J.; English, C.A.; Foreman, A.J.; Gage, G.; Hyde, J.M.; Ray, P.H.N.; Vatter, I.A.

1999-01-01

Three steels designated JPB, JPC and JPG from the IAEA Phase 3 Programme containing two copper and phosphorus levels were pre- and post-irradiation Charpy and hardness tested in the as-received (AR), 1200 C/0.5h heat treated (HT) and heat treated and 450 C/2000h aged (HTA) conditions. The HT condition was designed to simulate coarse grained heat-affected zones (HAZ's) and showed a marked sensitivity to thermal ageing in all three alloys. Embrittlement after thermal ageing was greater in the higher phosphorus alloys JPB and JPG. Charpy shifts due to thermal ageing of between 118 and 209 C were observed and accompanied by pronounced intergranular fracture, due to phosphorus segregation. The irradiation embrittlement response was complex. The low copper alloys, JPC and JPB, in the HT and HTA condition exhibited significant irradiation induced Charpy shift but very low or even negative hardness changes indicating non-hardening embrittlement. The higher copper alloy, JPG, also exhibited irradiation hardening in line with its copper content. Fractographic and microchemical studies indicated irradiation induced phosphorus segregation and a transition from cleavage to intergranular failure at grain boundary phosphorus concentrations above a critical level. The enhanced grain boundary phosphorus level increased with dose in agreement with a kinetic segregation model developed at Harwell. The relevance of the thermal ageing studies to RPV Annealing for Plant-Life Extension was identified early in the program. It is of concern that annealing of RPV's has been performed, or is proposed, at temperatures in the range 425--475 C for periods of about 1 week (168h). Much attention has been given to the use of in-situ hardness measurements and machining miniature Charpy and tensile specimens from belt-line plate and weld materials. However, HAZ's, often containing higher phosphorus levels than the present materials, have largely been ignored. A post-irradiation annealing (PIA

Microstructure and mechanical properties of annealed SUS 304H austenitic stainless steel with copper

Energy Technology Data Exchange (ETDEWEB)

Sen, Indrani [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Amankwah, E. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Department of Materials Science, African University of Science and Technology, Abuja (Nigeria); Kumar, N.S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Fleury, E. [Center for High Temperature Energy Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Oh-ishi, K.; Hono, K. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Ramamurty, U., E-mail: ramu@materials.iisc.ernet.in [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

2011-05-25

Research highlights: {yields} SUS 304H austenitic stainless steel containing 3 wt.% Cu was annealed at 700 deg. C for up to 100 h. {yields} Microstructure and mechanical properties of annealed alloys are examined. {yields} Nano-sized Cu-rich precipitation upon annealing. {yields} Strength of the alloy remains invariant with annealing whereas ductility improves. {yields} Fatigue crack growth threshold of 3 wt.% Cu added alloy increases with annealing. - Abstract: An experimental investigation into the effect of Cu on the mechanical properties of 0 and 3 wt.% Cu added SUS 304H austenitic stainless steel upon annealing at 700 deg. C for up to 100 h was conducted. Optical microscopy reveals grain coarsening in both the alloys upon annealing. Observations by transmission electron microscopy revealed the precipitation of nanometer-sized spherical Cu particles distributed within the austenitic grains and the presence of carbides at the dislocations. Both the yield and ultimate tensile strengths of the alloys were found to remain invariant with annealing. Tensile ductility and the threshold stress intensity factor range for fatigue crack growth for 3 wt.% Cu added alloy increase with annealing. These are attributed to the grain coarsening with annealing. In all, the addition of Cu to SUS 304H does not affect the mechanical performance adversely while improving creep resistance.

Graphite moderator annealing of the experimental reactor for irradiation (0.5 MW)

International Nuclear Information System (INIS)

Oliveira Avila, Carlos Alberto de; Pires, Luis Fernando Goncalves

1995-01-01

This work describes an operational procedure for the annealing of the graphite moderator in the 0,5 MW Experimental Reactor for Irradiation. A theoretical methodology has been developed for calculating the temperature field during the annealing process. The equations for mass, momentum, and energy conservation for the coolant as well as for the energy conservation in the moderator are solved numerically. The energy stored in the graphite and released in the annealing is accounted for by the use of a modified source term in the energy conservation equation for the moderator. A good agreement has been found for comparisons of the calculations with annealing data from the BEPO reactor. The major parameters affecting annealing have also been determined. (author). 8 refs, 11 figs

Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

International Nuclear Information System (INIS)

Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

2002-01-01

The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

Science.gov (United States)

Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

2018-02-26

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Annealing of chemical radiation damage in zirconium nitrate

International Nuclear Information System (INIS)

Mahamood, Aysha; Chandunni, E.; Nair, S.M.K.

1979-01-01

A kinetic study of the annealing of γ-irradiation damage in zirconium nitrate is presented. The annealing can be represented as a combination of a first order and a second order process. It is considered that the first order process is the combination of close correlated pairs of Osup(-) and NO fragments and the second order process involves the single reaction of random recombination of the fragments throughout the crystal. (auth.)

Liquid nitrogen enhancement of partially annealed fission tracks in glass

International Nuclear Information System (INIS)

Pilione, L.J.; Gold, D.P.

1976-01-01

It is known that the number density of fission tracks in solids is reduced if the sample is heated before chemical etching, and the effect of annealing must be allowed for before an age can be assigned to the sample. The extent of annealing can be determined by measuring the reduction of track parameters (diameter and/or length) and comparison with unannealed tracks. Correct ages can be obtained by careful calibration studies of track density reduction against track diameter or length reduction at different annealing temperatures and times. For crystallised minerals, however, the resulting correction techniques are not generally valid. In the experimental work described glass samples were partially annealed and then immersed in liquid N 2 for various periods, and it was shown that the properties of the glass and the track parameters could be altered so as to observe tracks that would normally be erased by annealing. The results of track density measurements against liquid N 2 immersion times are shown graphically. A gain of about 40% was achieved after 760 hours immersion time. The size of the tracks was not noticeably affected by the immersion. It was thought that thermal shock might be the cause of the track enhancement, but it was found that repeated immersion for about 2 hours did not lead to an increase in track density. Other studies suggest that the mechanism that erases the tracks through annealing may be partially reversed when the temperature of the sample is significantly lowered for a sufficient length of time. Further work is under way to find whether or not the process of enhancement is a reversal of the annealing process. Similar enhancement effects using liquid N 2 have been observed for d-particle tracks in polycarbonate detectors. (U.K.)

Effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy

International Nuclear Information System (INIS)

Kim, T. K.; Choi, B. S.; Baek, J. H.; Choi, B. K.; Jeong, Y. H.; Lee, D. J.; Jang, M. H.; Jeong, Y. H.

2002-01-01

In order to determine the annealing condition after cold rolling, the effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy were evaluated. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. The results of hardness test also revealed that the hardness was independent of the annealing, However, the results of corrosion test in an ammoniated water of pH 9.98 at 360 .deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 120 days also increased with the annealing temperature. It may be attributed to the growth of α' precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

Synthesis and characterization of nickel oxide particulate annealed at different temperatures

Science.gov (United States)

Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

2018-04-01

Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

Radiation annealing in Ag and Au due to energetic displacement cascades

International Nuclear Information System (INIS)

Averback, R.S.; Merkle, K.L.

1975-01-01

Radiation annealing due to energetic displacement cascades has been studied in Ag and Au. Thin film specimens, 2500 A, were doped to various concentrations of Frenkel pair defects by irradiating with 150 keV protons at temperatures below 10 K. Subsequently, the specimens were irradiated below 10 K with energetic, approximately 540 keV, self-ions. Electrical resistivity measurements were used to monitor the concentration of defects as a function of dose. In Au, approximately 5 percent of the doped-in Frenkel pairs, annealed during the 540 keV Au irradiation. The annealing volume associated with individual cascades was found to be 2.1 x 10 -16 cm 3 . In Ag approximately 5 percent of the doped-in defects annealed during a 500 keV Ag irradiation and the annealing volume of the cascade was found to be 5 x 10 -16 cm 3 . In addition, the effects of doping concentration and specimen temperature during doping were investigated

Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

International Nuclear Information System (INIS)

Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

2008-01-01

Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

Annealing behaviour of a nanostructured Cu–45 at.%Ni alloy

DEFF Research Database (Denmark)

Tian, Hui; Suo, H. L.; Mishin, Oleg

2013-01-01

The microstructure and crystallographic texture have been investigated in a Cu–45 at.%Ni alloy after heavy rolling and subsequent annealing at different temperatures. Cold-rolling to a von Mises strain of 5.7 produced a sample with an average boundary spacing along the normal direction of ~70 nm...... and a large fraction of high-angle boundaries (HABs), ~70 %. Annealing of this sample for 1 h at temperatures ≤450 °C causes structural coarsening, during which the fraction of HABs decreases. Annealing at higher temperatures results in pronounced discontinuous recrystallization accompanied by twinning. Large...... frequencies of twin boundaries contribute to high HAB fractions measured in the as-recrystallized condition. Cube-oriented grains demonstrate a size advantage compared to grains of other orientations, thus creating a strong cube texture in the recrystallized material. Further annealing of the recrystallized...

Thermal annealing of tilted fiber Bragg gratings

Science.gov (United States)

González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

2016-05-01

We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

Optical annealing of CaF2:Mn for cooled optically stimulated luminescence

International Nuclear Information System (INIS)

Miller, S.D.; Stahl, K.A.; Endres, G.W.R.; McDonald, J.C.

1989-01-01

Optical annealing of the cooled optically stimulated luminescence in CaF 2 :Mn at room temperature has been demonstrated. The laser of choice for optical annealing of CaF 2 : Mn is a 326 nm helium-cadmium ultraviolet laser. A complete cycle of readout and annealing of the CaF 2 :Mn cooled optically stimulated dosemeters can now be accomplished without heating the dosemeters above room temperature. This annealing work represents the next step toward creating a proton-recoil-based fast neutron dosimetry system based on the cooled optically stimulated luminescence technique. (author)

Structural study of conventional and bulk metallic glasses during annealing

International Nuclear Information System (INIS)

Pineda, E.; Hidalgo, I.; Bruna, P.; Pradell, T.; Labrador, A.; Crespo, D.

2009-01-01

Metallic glasses with conventional glass-forming ability (Al-Fe-Nd, Fe-Zr-B, Fe-B-Nb compositions) and bulk metallic glasses (Ca-Mg-Cu compositions) were studied by synchrotron X-ray diffraction during annealing throughout glass transition and crystallization temperatures. The analysis of the first diffraction peak position during the annealing process allowed us to follow the free volume change during relaxation and glass transition. The structure factor and the radial distribution function of the glasses were obtained from the X-ray measurements. The structural changes occurred during annealing are analyzed and discussed.

Composition dependent thermal annealing behaviour of ion tracks in apatite

Energy Technology Data Exchange (ETDEWEB)

Nadzri, A., E-mail: allina.nadzri@anu.edu.au [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Schauries, D.; Mota-Santiago, P.; Muradoglu, S. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gleadow, A.J.W. [School of Earth Science, University of Melbourne, Melbourne, VIC 3010 (Australia); Hawley, A. [Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168 (Australia); Kluth, P. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia)

2016-07-15

Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

Cyclic softening in annealed Zircaloy-2: Role of edge dislocation dipoles and vacancies

Science.gov (United States)

Sudhakar Rao, G.; Singh, S. R.; Krsjak, Vladimir; Singh, Vakil

2018-04-01

The mechanism of cyclic softening in annealed Zircaloy-2 at low strain amplitudes under strain controlled fatigue at room temperature is rationalized. The unusual softening due to continuous decrease in the phenomenological friction stress is found to be associated with decrease in the resistance against movement of dislocations because of the formation and easy glide of pure edge dislocation dipoles and consequent decrease in friction stress from reduction in the shear modulus. Positron annihilation spectroscopy data strongly support the increase in edge dislocation density containing jogs, from increased positron trapping and increase in annihilation lifetime.

Investigations of morphological changes during annealing of polyethylene single crystals

NARCIS (Netherlands)

Tian, M.; Loos, J.

2001-01-01

The morphological evolution of isolated individual single crystals deposited on solid substrates was investigated during annealing experiments using in situ and ex situ atomic force microscopy techniques. The crystal morphology changed during annealing at temperatures slightly above the original

The annealing effects on irradiated SiC piezo resistive pressure sensor

International Nuclear Information System (INIS)

Almaz, E.; Blue, T. E.; Zhang, P.

2009-01-01

The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

Solid-state microwave annealing of ion-implanted 4H-SiC

International Nuclear Information System (INIS)

Sundaresan, Siddarth G.; Tian, Yong-lai; Ridgway, Mark C.; Mahadik, Nadeemullah A.; Qadri, Syed B.; Rao, Mulpuri V.

2007-01-01

Solid-state microwave annealing was performed at temperatures up to 2120 deg, C for 30 s on ion-implanted 4H-SiC in N 2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 deg, C is 2.65 nm for 10 μm x 10 μm atomic force microscopy scans. The sheet resistances measured on Al + - and P + -implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites

Electrically-inactive phosphorus re-distribution during low temperature annealing

Science.gov (United States)

Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

2018-04-01

An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

Burst annealing of electron damage in silicon solar cells

International Nuclear Information System (INIS)

Day, A.C.; Horne, W.E.; Thompson, M.A.; Lancaster, C.A.

1985-01-01

A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space

Applications of transient annealing to solar cell processing

Energy Technology Data Exchange (ETDEWEB)

Bentini, G.G. (C.N.R. Istituto LAMEL, Bologna (Italy))

1983-01-01

The economical reasons supporting the introduction of transient annealing in solar cell manufacturing are briefly discussed. Such techniques may play an important role, as they are compatible with the request of high throughput, automated processing together with the high quality of the p-n junction which are necessary for large scale economical production of photovoltaic energy. A survey of the applications of the different transient annealing techniques to solar cell processing has been developed by comparing in detail the results obtained up to now the case of solid and liquid phase transient annealing, associated with dry techniques such as Ion Implantation or dopant deposition on the wafer surface. The possibility of using laser pulses for the formation of the p-n junction by incorporation of dopant atoms from a suitable gaseous environment, has also been examined.

Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

International Nuclear Information System (INIS)

Gayathri, A.G.; Joseph, C.M.

2016-01-01

Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching [Department of Physics and Taiwan SPIN Research Center, National Changhua University of Education, Changhua 50007 (China); Kao, Ming-Jer; Tsai, Ming-Jinn [Industrial Technology Research Institute, Hsinchu 31040 (China); Horng, Lance

2007-12-15

In this study, the transient annealing effect on the switching behavior of microstructured Co{sub 60}Fe{sub 20}B{sub 20}-based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200{proportional_to}250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

International Nuclear Information System (INIS)

Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching; Kao, Ming-Jer; Tsai, Ming-Jinn; Horng, Lance

2007-01-01

In this study, the transient annealing effect on the switching behavior of microstructured Co 60 Fe 20 B 20 -based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∝250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

2016-09-15

Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

Towards p-type ZnO using post-growth annealing

Energy Technology Data Exchange (ETDEWEB)

Dangbegnon, J.K.; Roro, K.T.; Botha, J.R. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2008-01-15

The optical properties of zinc oxide (ZnO) films grown by metalorganic chemical vapor deposition on GaAs substrate are investigated. Samples were annealed in two different ambients, namely nitrogen and oxygen, and studied by photoluminescence (PL). Samples annealed in oxygen at 600 C show arsenic acceptor-related signatures. The near-band-edge emission is dominated by an excitonic feature at 3.355 eV and compensation broadens the spectra. No such changes are observed when similar samples are annealed in nitrogen. The diffusion of arsenic from the GaAs substrate appears to be a source of acceptors. This effect is enhanced in an oxygen atmosphere. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reduction of Annealing Times for Energy Conservation in Aluminum

Energy Technology Data Exchange (ETDEWEB)

Anthony D. Rollett; Hasso Weiland; Mohammed Alvi; Abhijit Brahme

2005-08-31

Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that will provide a scientific basis for shortening processing times and consuming less energy during annealing.

Influence of rolling and annealing conditions on texture and mechanical properties of zirconium (1960)

International Nuclear Information System (INIS)

Orssaud, J.

1958-06-01

Rolling and annealing textures of KROLL zirconium samples at several rolling rates were studied by pole figures with an automatic recorder versus the position in the sheet thickness. Tensile tests, hardness measurements and micrographic examinations allowed to study the evolution of the recrystallization and the variation of the mechanical properties after rolling and/or annealing. Annealing textures slightly varies with the annealing temperature. Annealing at 500 deg. C gives several peculiarities. This temperature seems characteristic in the study of zirconium. (author) [fr

Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

International Nuclear Information System (INIS)

Zolper, J.C.; Han, J.; Biefeld, R.M.

1997-01-01

The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Azadeh Jafari

2014-07-01

Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

Simulated annealing image reconstruction for positron emission tomography

International Nuclear Information System (INIS)

Sundermann, E.; Lemahieu, I.; Desmedt, P.

1994-01-01

In Positron Emission Tomography (PET) images have to be reconstructed from moisy projection data. The noise on the PET data can be modeled by a Poison distribution. In this paper, we present the results of using the simulated annealing technique to reconstruct PET images. Various parameter settings of the simulated annealing algorithm are discussed and optimized. The reconstructed images are of good quality and high contrast, in comparison to other reconstruction techniques. (authors)

Population annealing: Theory and application in spin glasses

OpenAIRE

Wang, Wenlong; Machta, Jonathan; Katzgraber, Helmut G.

2015-01-01

Population annealing is an efficient sequential Monte Carlo algorithm for simulating equilibrium states of systems with rough free energy landscapes. The theory of population annealing is presented, and systematic and statistical errors are discussed. The behavior of the algorithm is studied in the context of large-scale simulations of the three-dimensional Ising spin glass and the performance of the algorithm is compared to parallel tempering. It is found that the two algorithms are similar ...

Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

International Nuclear Information System (INIS)

Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

1990-01-01

The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

Response of neutron-irradiated RPV steels to thermal annealing

International Nuclear Information System (INIS)

Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

1997-01-01

One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the fracture toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results of work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response of several irradiated RPV steels

Annealing effect on the microstructure and magnetic properties of 14%Cr-ODS ferritic steel

International Nuclear Information System (INIS)

Ding, H.L.; Gao, R.; Zhang, T.; Wang, X.P.; Fang, Q.F.; Liu, C.S.

2015-01-01

Graphical abstract: TEM images of microstructure for 14%Cr-ODS ferritic steel annealed for 2 h at different temperatures: (a) 600 °C, (b) 800 °C, (c) 950 °C, and (d) 1150 °C, and the evolution trends of coercivity field (H_C) and Vickers microhardness for samples annealed at above temperatures for 2 h and 50 h. - Highlights: • The thermal stability of annealed 14%Cr-ODS ferritic steel was investigated. • The particle size keeps fairly constant with increasing annealing temperature. • The grain size is still 2–4 μm even after annealing for 50 h at 1150 °C. • The hardness and H_C are almost unchanged after annealing from 800 °C to 1150 °C. - Abstract: The microstructure and magnetic properties of the 14%Cr oxide dispersion strengthened (ODS) ferritic steel fabricated by sol–gel and HIP method were investigated by annealing in vacuum for 2 h (at 300, 600, 800, 950 and 1150 °C) and 50 h (at 600, 800, 950 and 1150 °C). Microstructure analysis shows that as the annealing temperature increases, the size of oxide nanoparticles becomes smaller and their dispersion in matrix becomes more homogeneous. Grain size remains stable when the annealing temperature is below 800 °C, while above 800 °C, grain size grows with the increasing annealing temperature and time. The Vickers microhardness and coercivity (H_C) display almost similar evolution trend with annealing temperature for 2 h and 50 h. No obvious recrystallization appears after 1150 °C annealing, which indicates the high microstructural stability of 14%Cr-ODS ferritic steel. The possible mechanism for above behaviors is discussed in this paper.

Effects of methane annealing ambience on the structure and photoluminescence of BCNO phosphors

International Nuclear Information System (INIS)

Lu, Fang; Zhang, Xinghua; Lu, Zunming; Tang, Chengchun

2014-01-01

Green-emitting BCNO phosphors are synthetized by low temperature liquid method. And then the properties of structure and photoluminescence of BCNO phosphors annealed under methane ambience at 500–700 °C for 4 h and at 600 °C for 3–6 h are researched. When the phosphor was annealed for the same time period, the crystallinity was improved first and then became poor as the annealing temperature increased. In addition, the emission peak shifted to high wavelength, and the maximum shift span reached up to 40 nm. When the phosphor was annealed at the same temperature, the crystallinity was improved and the emission peak was red-shifted. The multi-peaks fitting results indicated that three luminescence mechanisms which were C-related defect, B–O luminescence center and other defects or vacancies played important roles in BCNO phosphors. - Highlights: • When the annealing time period was fixed to 4 h, the XRD results showed the crystallinity was improved at first and then became poor as the annealing temperature increased. Furthermore, the PL results indicated the emission peak was red-shifted and then blue-shifted and the maximum shift span reached up to 40 nm when the annealing temperature was 600 °C. • With regard to the samples annealed at 600 °C for 3, 4, 5 and 6 h respectively, the crystallinity was improved as the annealing time period prolonged. In addition, the emission peak was red-shifted first and then blue-shifted and the maximum shift span reached up to 40 nm when the annealing time was 4 h. • What's more, the three-peaks fitting graphs uncovered that the luminescence properties were decided by three mechanisms which were C-related defect, B–O luminescence center and other defects or vacancies. Therefore, the peakshift and luminescence intensity were influenced by the comprehensive superposition of these three factors. • In this work, we found the inter luminescence mechanisms of BCNO phosphor by the annealing experiments under methane

Annealing of silicon epitaxial n+-p-structures irradiated with fast electrons

International Nuclear Information System (INIS)

Korshunov, F.P.; Turin, P.M.; Gurinovich, V.A.; Zhdanovich, N.E.

2010-01-01

Static (forward voltage drop and barrier capacitance) and dynamic (minority charge carriers lifetime in p-base) parameters changes of n + -p-structures irradiated with electrons (6 MeV) have been investigated. It is established that the forward voltage drop and the barrier capacitance of n + -p-junction recover during annealing at about 623 K, but the minority charge carriers lifetime recovery occurs at annealing temperatures above 773 K. The recovery of a forward voltage drop and barrier capacitance is related with annealing of radiation complexes of divacancy-oxygen (V 2 O) and boron-carbon (B i C s ). The recovery of minority charge carriers lifetime in structures is related mainly with annealing of radiation complex of carbonoxygen (C i O i ). (authors)

X-ray diffraction investigation of self-annealing in nanocrystalline copper electrodeposits

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2006-01-01

X-ray diffraction analysis and electrical resistivity measurements were conducted simultaneously for in-situ examination of self-annealing in copper electrodeposits. Considerable growth of the as-deposited nano-sized crystallites occurs with time and the crystallographic texture changes by multip...... twinning during self-annealing. The kinetics of self-annealing depends on the layer thickness as well as on the orientation and/or the size of the as-deposited crystallites. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.......X-ray diffraction analysis and electrical resistivity measurements were conducted simultaneously for in-situ examination of self-annealing in copper electrodeposits. Considerable growth of the as-deposited nano-sized crystallites occurs with time and the crystallographic texture changes by multiple...

The Effect of Annealing on the Elastic Modulus of Orthodontic Wires

Science.gov (United States)

Higginbottom, Kyle

Introduction: Nickel Titanium orthodontic wires are currently used in orthodontic treatment due to their heat activated properties and their delivery of constant force. The objective of this study was to determine the effect of annealing on the elastic modulus of Nickel Titanium, Stainless Steel and Beta-titanium (TMA) wires. Different points along the wire were tested in order to determine how far from the annealed ends the elastic modulus of the wires was affected. Methods: Eighty (80) orthodontic wires consisting of 4 equal groups (SS/TMA/Classic NitinolRTM/Super Elastic NitinolRTM) were used as the specimens for this study. All wires were measured and marked at 5mm measurements, and cut into 33.00mm sections. The wires were heated with a butane torch until the first 13.00mm of the wires were red hot. Load deflection tests using an InstronRTM universal testing machine were run at 5mm distances from the end of the wire that had been annealed. The change in elastic modulus was then determined. Results: There was a significant difference (F = 533.001, p = 0.0005) in the change in elastic modulus for the four distances. There was also a significant difference (F = 57.571, p = 0.0005) in the change in elastic modulus for the four wire types. There was a significant interaction (F = 19.601, p = 0.005) between wire type and distance, however this interaction negated the differences between the wires. Conclusion: 1) There are significant differences in the changes in elastic modulus between the areas of the wires within the annealed section and those areas 5mm and 10mm away from the annealed section. The change in elastic modulus within the annealed section was significantly greater at 8 mm than it was at 13mm, and this was significantly greater than 18mm and 23mm (5mm and 10mm beyond the annealed section). However, there was no statistical difference in the change in elastic modulus between 5mm and 10mm away from the annealed section (18mm and 23mm respectively). 2

Structural coarsening during annealing of an aluminum plate heavily deformed using ECAE

DEFF Research Database (Denmark)

Mishin, Oleg V.; Zhang, Yubin; Godfrey, A.

2015-01-01

The microstructure and softening behaviour have been investigated in an aluminum plate heavily deformed by equal channel angular extrusion and subsequently annealed at 170 °C. It is found that at this temperature the microstructure evolves by coarsening with no apparent signs of recrystallization...... even after 2 h of annealing. Both coarsening and softening are rapid within first 10 minutes of annealing followed by a slower evolution with increasing annealing duration. Evidence of triple junction (TJ) motion during coarsening is obtained by inspecting the microstructure in one region using...... the electron backscatter diffraction technique both before and after annealing for 10 minutes. The fraction of fast-migrating TJs is found to strongly depend of the type of boundaries composing a junction. The greatest fraction of fast-migrating TJs is in the group, where all boundaries forming a junction...

Overall model of the dynamic behaviour of the steel strip in an annealing heating furnace on a hot-dip galvanizing line

Directory of Open Access Journals (Sweden)

Fernández, R.

2010-10-01

Full Text Available Predicting the temperature of the steel strip in the annealing process in a hot-dip galvanizing line (HDGL is important to ensure the physical properties of the processed material. The development of an accurate model that is capable of predicting the temperature the strip will reach according to the furnace’s variations in temperature and speed, its dimensions and the steel’s chemical properties, is a requirement that is being increasingly called for by industrial plants of this nature. This paper presents a comparative study made between several types of algorithms of Data Mining and Artificial Intelligence for the design of an efficient and overall prediction model that will allow determining the strip’s variation in temperature according to the physico-chemical specifications of the coils to be processed, and fluctuations in temperature and speed that are recorded within the annealing process. The ultimate goal is to find a model that is effectively applicable to coils of new types of steel or sizes that are being processed for the first time. This model renders it possible to fine-tune the control model in order to standardise the treatment in areas of the strip in which there is a transition between coils of different sizes or types of steel.La predicción de la temperatura de la banda de acero dentro del proceso de recocido de una planta de galvanizado continuo en caliente es importante para garantizar las propiedades físicas del material procesado. El desarrollo de un modelo preciso que sea capaz de predecir la temperatura que va a alcanzar la banda según las variaciones de temperaturas y velocidades del horno, y sus dimensiones y propiedades químicas del acero, es una necesidad cada vez más demandada por este tipo de plantas industriales. En el presente estudio se muestra una comparativa realizada entre diversos tipos de algoritmos deMinería de Datos e Inteligencia Artificial para el desarrollo de un modelo de predicci

Simulated annealing image reconstruction for positron emission tomography

Energy Technology Data Exchange (ETDEWEB)

Sundermann, E; Lemahieu, I; Desmedt, P [Department of Electronics and Information Systems, University of Ghent, St. Pietersnieuwstraat 41, B-9000 Ghent, Belgium (Belgium)

1994-12-31

In Positron Emission Tomography (PET) images have to be reconstructed from moisy projection data. The noise on the PET data can be modeled by a Poison distribution. In this paper, we present the results of using the simulated annealing technique to reconstruct PET images. Various parameter settings of the simulated annealing algorithm are discussed and optimized. The reconstructed images are of good quality and high contrast, in comparison to other reconstruction techniques. (authors). 11 refs., 2 figs.

Experimental quantum annealing: case study involving the graph isomorphism problem.

Science.gov (United States)

Zick, Kenneth M; Shehab, Omar; French, Matthew

2015-06-08

Quantum annealing is a proposed combinatorial optimization technique meant to exploit quantum mechanical effects such as tunneling and entanglement. Real-world quantum annealing-based solvers require a combination of annealing and classical pre- and post-processing; at this early stage, little is known about how to partition and optimize the processing. This article presents an experimental case study of quantum annealing and some of the factors involved in real-world solvers, using a 504-qubit D-Wave Two machine and the graph isomorphism problem. To illustrate the role of classical pre-processing, a compact Hamiltonian is presented that enables a reduced Ising model for each problem instance. On random N-vertex graphs, the median number of variables is reduced from N(2) to fewer than N log2 N and solvable graph sizes increase from N = 5 to N = 13. Additionally, error correction via classical post-processing majority voting is evaluated. While the solution times are not competitive with classical approaches to graph isomorphism, the enhanced solver ultimately classified correctly every problem that was mapped to the processor and demonstrated clear advantages over the baseline approach. The results shed some light on the nature of real-world quantum annealing and the associated hybrid classical-quantum solvers.

Molecular dynamics simulation of annealed ZnO surfaces

Energy Technology Data Exchange (ETDEWEB)

Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

2015-04-24

The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001{sup ¯}) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

Effect of pre-annealing on NO32- centers in synthetic hydroxyapatite

International Nuclear Information System (INIS)

Nosenko, V.V.; Vorona, I.P.; Ishchenko, S.S.; Baran, N.P.; Zatovsky, I.V.; Gorodilova, N.A.; Povarchuk, V.Yu.

2012-01-01

Effect of pre-annealing of synthetic hydroxyapatite (HAP) on properties of γ- and UV- induced NO 3 2- centers was studied by electron paramagnetic resonance (EPR). Nitrate-containing hydroxyapatite powders ((N)HAP)) and the powders with an admixture of carbonate and nitrate ions ((C,N)HAP) were annealed in the temperature range T ann = 20 °C − 600 °C before irradiation. It was found that pre-annealing of (N)HAP samples changes the parameters of NO 3 2- centers while no changes took place in (C,N)HAP. Moreover, at the pre-annealing temperatures T ann > 200 °C two new NO 3 2- centers were observed in (N)HAP samples; they are characterized by larger value of A ⊥ (3.67 and 4.41 mT) as compared to the known centers. It was also found that the dependence of NO 3 2- centers amount on T ann is non-monotonous in both types of samples. Presumably this is caused by the escape of water molecules from HAP during the annealing and essential modification of the defect subsystem of HAP.

Effects of annealing temperature in a metal alloy nano-dot memory

International Nuclear Information System (INIS)

Lee, Jung Min; Lee, Gae Hun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Tetsu

2011-01-01

The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ∼700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 .deg. C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

Simultaneous measure of a spectral line profile and the apparatus function of a Fabry-Perot spectrometer when continuous background is present

International Nuclear Information System (INIS)

Moreno, J.M.; Quintanilla, M.; Mar, S.

1978-01-01

A deconvolution method of registered profile on a Fabry-Perot spectrometer is developed, when the actual profile of the source is a Voigt pattern together with a continuous background. The reliability and accuracy of the method is tested with theoreticaly simulated profiles. The method is applied both to measure the real line profiles and to find the Fabry-Perot parameters, as a test of its validity on studies of experimental profiles. Both measure types -source profile and apparatus function- are made simultaneously by means of analysis of the variations of registered profile, at 6438.5A Cd line and 6328A He-Ne laser line, varying the optical path between interferometer mirrors. (author) [es

In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

International Nuclear Information System (INIS)

Yun, Di; Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M.

2015-01-01

U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

Energy Technology Data Exchange (ETDEWEB)

Yun, Di, E-mail: diyun1979@xjtu.edu.cn [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Xi' an Jiao Tong University, 28 Xian Ning West Road, Xi' an 710049 (China); Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

2015-12-15

U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

Sb(III) and Sb(V) separation and analytical speciation by a continuous tandem on-line separation device in connection with inductively coupled plasma atomic emission spectrometry

Energy Technology Data Exchange (ETDEWEB)

Menendez Garcia, A. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Perez Rodriguez, M.C. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Sanchez Uria, J.F. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Sanz-Medel, A. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.

1995-09-01

A sensitive, precise and automated non-chromatographic method for Sb(III) and Sb(V) analytical speciation based on a continuous tandem on-line separation device in connection with inductively coupled plasma-atomic emission (ICP-AES) detection is proposed. Two on-line successive separation steps are included into this method: a continuous liquid-liquid extraction of Sb(III) with ammonium pyrrolidine dithiocarbamate (APDC) into methylisobuthylketone (MIBK), followed by direct stibine generation from the organic phase. Both separation steps are carried out in a continuous mode and on-line with the ICP-AES detector. Optimization of experimental conditions for the tandem separation and ICP-AES detection are investigated in detail. Detection limits for Sb(III) were 3 ng.mL{sup -1} and for Sb(V) 8 ng.mL{sup -1}. Precisions observed are in the range {+-} 5%. The proposed methodology has been applied to Sb(III) and Sb(V) speciation in sea-water samples. (orig.)

Annealing effects of carbon fiber-reinforced epoxy resin composites irradiated by electron beams

International Nuclear Information System (INIS)

Udagawa, Akira; Sasuga, Tuneo; Ito, Hiroshi; Hagiwara, Miyuki

1987-01-01

Carbon cloth-reinforced epoxy resin composites were irradiated with 2 MeV electrons at room temperature and then annealed in air for 2 h at temperatures up to 180 deg C. A considerable decrease in the three-point bending strength occurred when the irradiated composites were annealed in the temperature range of 115 - 135 deg C which is below the glass transition temperature T g of the matrix resin, while the bending strength remained unchanged up to 180 deg C for the unirradiated composites. In the dynamic viscoelastic spectra of the irradiated matrix, a new relaxation appeared at the temperature extending from 50 deg C to just below the matrix T g and disappeared on annealing for 2 h at 135 deg C. Annealing also decreased the concentration of free radicals existing stably in the irradiated matrix at room temperature. After annealing, a large amount of clacks and voids were observed in the fractography of the composites by scanning electron microscopy. These results indicate: (1) Annealing brings about rearrangement of the radiation-induced molecular chain scission in the matrix; (2) The bending strength of the irradiated composites decreased owing to the increased brittleness of the matrix by annealing. (author)

Toward the understanding of annealing effects on (GaIn)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

2015-01-01

(GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

Simulated annealing model of acupuncture

Science.gov (United States)

Shang, Charles; Szu, Harold

2015-05-01

The growth control singularity model suggests that acupuncture points (acupoints) originate from organizers in embryogenesis. Organizers are singular points in growth control. Acupuncture can cause perturbation of a system with effects similar to simulated annealing. In clinical trial, the goal of a treatment is to relieve certain disorder which corresponds to reaching certain local optimum in simulated annealing. The self-organizing effect of the system is limited and related to the person's general health and age. Perturbation at acupoints can lead a stronger local excitation (analogous to higher annealing temperature) compared to perturbation at non-singular points (placebo control points). Such difference diminishes as the number of perturbed points increases due to the wider distribution of the limited self-organizing activity. This model explains the following facts from systematic reviews of acupuncture trials: 1. Properly chosen single acupoint treatment for certain disorder can lead to highly repeatable efficacy above placebo 2. When multiple acupoints are used, the result can be highly repeatable if the patients are relatively healthy and young but are usually mixed if the patients are old, frail and have multiple disorders at the same time as the number of local optima or comorbidities increases. 3. As number of acupoints used increases, the efficacy difference between sham and real acupuncture often diminishes. It predicted that the efficacy of acupuncture is negatively correlated to the disease chronicity, severity and patient's age. This is the first biological - physical model of acupuncture which can predict and guide clinical acupuncture research.

Positron annihilation characteristics of ODS and non-ODS EUROFER isochronally annealed

International Nuclear Information System (INIS)

Ortega, Y.; Castro, V. de; Monge, M.A.; Munoz, A.; Leguey, T.; Pareja, R.

2008-01-01

Yttrium oxide dispersion strengthened (ODS) and non-ODS EUROFER produced by mechanical alloying and hot isostatic pressing have been subjected to isochronal annealing up to 1523 K, and the evolution of the open-volume defects and their thermal stability have been investigated using positron lifetime and coincidence Doppler broadening (CDB) techniques. Transmission electron microscopy (TEM) observations have also been performed on the studied samples to verify the characteristics of the surviving defects after annealing at 1523 K. The CDB spectra of ODS EUROFER exhibit a characteristic signature that is attributed to positron annihilation in Ar-decorated cavities at the oxide particle/matrix interfaces. The variation of the positron annihilation parameters with the annealing temperature shows three stages: up to 623 K, between 823 and 1323 K, and above 1323 K. Three-dimensional vacancy clusters, or voids, are detected in either materials in as-HIPed condition and after annealing at T ≤ 623 K. In the temperature range 823-1323 K, these voids' growth and nucleation and the growth of other new species of voids take place. Above 1323 K, some unstable cavities start to anneal out, and cavities associated to oxide particles and other small precipitates survive to annealing at 1523 K. The TEM observations and the positron annihilation results indicate that these cavities should be decorated with Ar atoms absorbed during the mechanical alloying process

Positron annihilation characteristics of ODS and non-ODS EUROFER isochronally annealed

Energy Technology Data Exchange (ETDEWEB)

Ortega, Y. [Departamento de Fisica, Universidad Carlos III de Madrid, 28911 Leganes (Spain)], E-mail: yanicet@fis.ucm.es; Castro, V. de; Monge, M.A.; Munoz, A.; Leguey, T.; Pareja, R. [Departamento de Fisica, Universidad Carlos III de Madrid, 28911 Leganes (Spain)

2008-05-31

Yttrium oxide dispersion strengthened (ODS) and non-ODS EUROFER produced by mechanical alloying and hot isostatic pressing have been subjected to isochronal annealing up to 1523 K, and the evolution of the open-volume defects and their thermal stability have been investigated using positron lifetime and coincidence Doppler broadening (CDB) techniques. Transmission electron microscopy (TEM) observations have also been performed on the studied samples to verify the characteristics of the surviving defects after annealing at 1523 K. The CDB spectra of ODS EUROFER exhibit a characteristic signature that is attributed to positron annihilation in Ar-decorated cavities at the oxide particle/matrix interfaces. The variation of the positron annihilation parameters with the annealing temperature shows three stages: up to 623 K, between 823 and 1323 K, and above 1323 K. Three-dimensional vacancy clusters, or voids, are detected in either materials in as-HIPed condition and after annealing at T {<=} 623 K. In the temperature range 823-1323 K, these voids' growth and nucleation and the growth of other new species of voids take place. Above 1323 K, some unstable cavities start to anneal out, and cavities associated to oxide particles and other small precipitates survive to annealing at 1523 K. The TEM observations and the positron annihilation results indicate that these cavities should be decorated with Ar atoms absorbed during the mechanical alloying process.

Annealing texture of rolled nickel alloys

International Nuclear Information System (INIS)

Meshchaninov, I.V.; Khayutin, S.G.

1976-01-01

A texture of pure nickel and binary alloys after the 95% rolling and annealing has been studied. Insoluble additives (Mg, Zr) slacken the cubic texture in nickel and neral slackening of the texture (Zr). In the case of alloying with silicium (up to 2%) the texture practically coinsides with that of a technical-grade nickel. The remaining soluble additives either do not change the texture of pure nickel (C, Nb) or enhance the sharpness and intensity of the cubic compontnt (Al, Cu, Mn, Cr, Mo, W, Co -at their content 0.5 to 2.0%). A model is proposed by which variation of the annealing texture upon alloying is caused by dissimilar effect of the alloying elements on the mobility of high- and low-angle grain boundaries

On crystallization of bisphenol-A polycarbonate thin films upon annealing

Energy Technology Data Exchange (ETDEWEB)

Yang, Chunhong; Li, Qichao; Mao, Wenfeng; Wang, Peng; He, Chunqing, E-mail: hecq@whu.edu.cn

2015-10-16

Crystallization of polycarbonate (PC) films as a function of annealing time has been investigated by various methods. A distinct diffraction peak at 17.56°, a sharp decrease of film thickness, an increase of refractive index and branch-type structures on the surface are found merely for the film after crystallization. Interestingly, positron annihilation parameters demonstrate fractional free-volumes in PC films vary significantly not only before crystallization but also at the early stage of annealing, which are not found by other methods. The results show that free-volumes in PC film must be increased remarkably before crystallization, which enables the occurrence of molecule rearrangement. - Highlights: • Fractional free-volume in PC film decreased of early stage of annealing. • Crystallization of PC film on Si substrate occurred after annealed for ∼48 hours. • Fractional free-volume in PC film increased remarkably before crystallization. • Positron diffusion length and S parameter revealed the variation of free volumes.

Valence control of cobalt oxide thin films by annealing atmosphere

International Nuclear Information System (INIS)

Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

2011-01-01

The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

On crystallization of bisphenol-A polycarbonate thin films upon annealing

International Nuclear Information System (INIS)

Yang, Chunhong; Li, Qichao; Mao, Wenfeng; Wang, Peng; He, Chunqing

2015-01-01

Crystallization of polycarbonate (PC) films as a function of annealing time has been investigated by various methods. A distinct diffraction peak at 17.56°, a sharp decrease of film thickness, an increase of refractive index and branch-type structures on the surface are found merely for the film after crystallization. Interestingly, positron annihilation parameters demonstrate fractional free-volumes in PC films vary significantly not only before crystallization but also at the early stage of annealing, which are not found by other methods. The results show that free-volumes in PC film must be increased remarkably before crystallization, which enables the occurrence of molecule rearrangement. - Highlights: • Fractional free-volume in PC film decreased of early stage of annealing. • Crystallization of PC film on Si substrate occurred after annealed for ∼48 hours. • Fractional free-volume in PC film increased remarkably before crystallization. • Positron diffusion length and S parameter revealed the variation of free volumes

Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

CERN Document Server

Rhee, J Y

1999-01-01

The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder -> order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by p...

Improvements of high-power diode laser line generators open up new application fields

Science.gov (United States)

Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

2009-02-01

Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

Review of in-service thermal annealing of nuclear reactor pressure vessels

International Nuclear Information System (INIS)

Server, W.L.

1984-01-01

Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper-shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. A test reactor pressure vessel has been wet annealed at less than 343 0 C (650 0 F), and annealing of the Belgian BR-3 reactor vessel has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place is feasible, but solvable engineering problems do exist. The materials with highest radiation sensitivity in the older reactor vessels are submerged-arc weld metals with high copper and nickel concentrations. The limited Charpy V-notch and fracture toughness data available for five such welds were reviewed. The review suggested that significant recovery results from annealing at 454 0 C (850 0 F) for one week. Two of the main concerns with a localized heat treatment at 454 0 C (850 0 F) are the degree of distortion that may occur after the annealing cycle and the extent of residual stresses. A thermal and structural analysis of a reactor vessel for distortions and residual stresses found no problems with the reactor vessel itself but did indicate a rotation at the nozzle region of the vessel that would plastically deform the attached primary piping. Further analytical studies are needed. An American Society for Testing and Materials (ASTM) task group is upgrading and revising the ASTM Recommended Guide for In-Service Annealing of WaterCooled Nuclear Reactor Vessels (E 509-74) with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (for example, the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

A device for routine studies of nuclear track annealing in mineral grains

International Nuclear Information System (INIS)

Jha, R.; Lal, D.

1984-01-01

For studies of annealing of nuclear tracks in common rock-forming minerals, we have devised a simple heating system that provides a highly stable hot environment characterized by a large temperature gradient. The temperature can be maintained at the desired values within +- 2 deg C over a period of several months. The system allows placing of samples at eight different temperature points in the temperature range of 350 to 550 deg C in a single setting. This range essentially encompasses the entire temperature range normally used in laboratory track annealing of mineral grains with annealing duration of a few minutes to a couple of months. Lower as well as higher temperatures and different ranges are possible by changing the material used for the heating system and its geometry. However, for annealing at high temperature, and for short duration we found that it is more convenient to heat samples in the appropriate region of the cone of a large gas flame. We present, as an example, results of cosmic-ray track annealing studies in hypersthene grains from the Johnstown meteorite. The simplicity and reproducibility of the technique allows an in-depth study of annealing characteristics of different minerals. (author)

Radiation damage and annealing of lithium-doped silicon solar cells

Science.gov (United States)

Statler, R. L.

1971-01-01

Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

Thermal annealing of natural, radiation-damaged pyrochlore

Energy Technology Data Exchange (ETDEWEB)

Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

2017-03-01

), extending over a temperature range of ca. 300 K, up to 800 K (Raman). The pyrochlore from Blue River shows in its initial state an amorphous X-ray diffraction pattern superimposed by weak Bragg-maxima that indicates the existence of ordered regions in a damaged matrix. In contrast to the other studied pyrochlores, Raman spectra of the Blue River sample show the appearance of local modes above 560 K between 700 and 800 cm{sup -1} resulting from its high content of U and Ta impurities. DSC measurements confirmed the observed structural recovery upon annealing. While the annealing-induced ordering of Panda Hill begins at a lower temperature (ca. 500 K) the recovery of the highly-damaged pyrochlore from Miass occurs at 800 K. The Blue-River pyrochlore shows a multi-step recovery which is similarly seen by XRD. Thermogravimetry showed a continuous mass loss on heating for all radiation-damaged pyrochlores (Panda Hill ca. 1%, Blue River ca. 1.5%, Miass ca. 2.9%).

On the analysis of the activation mechanisms of sub-melt laser anneals

DEFF Research Database (Denmark)

Clarysse, T.; Bogdanowicz, J.; Goosens, J.

2008-01-01

electrically active concentration level as well as the concurrent mobility is dependent on the dopant concentration level. This implies that the activation of B through the laser anneal process in the explored temperature–time space is governed by kinetic processes (i.e. the dissolution of B–I pairs......In order to fabricate carrier profiles with a junction depth (15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outperform standard anneal approaches, a detailed......) and not by the (temperature related) solid solubility....

Coupled Qubits for Next Generation Quantum Annealing: Improving Coherence

Science.gov (United States)

Weber, Steven; Samach, Gabriel; Hover, David; Rosenberg, Danna; Yoder, Jonilyn; Kim, David K.; Kerman, Andrew; Oliver, William D.

Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times, limited primarily by the use of large persistent currents. Here, we examine an alternative approach, using flux qubits with smaller persistent currents and longer coherence times. We demonstrate tunable coupling, a basic building-block for quantum annealing, between two such qubits. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

Different annealing temperature suitable for different Mg doped P-GaN

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

High Strength-High Ductility Combination Ultrafine-Grained Dual-Phase Steels Through Introduction of High Degree of Strain at Room Temperature Followed by Ultrarapid Heating During Continuous Annealing of a Nb-Microalloyed Steel

Science.gov (United States)

Deng, Yonggang; Di, Hongshuang; Hu, Meiyuan; Zhang, Jiecen; Misra, R. D. K.

2017-07-01

Ultrafine-grained dual-phase (UFG-DP) steel consisting of ferrite (1.2 μm) and martensite (1 μm) was uniquely processed via combination of hot rolling, cold rolling and continuous annealing of a low-carbon Nb-microalloyed steel. Room temperature tensile properties were evaluated and fracture mechanisms studied and compared to the coarse-grained (CG) counterpart. In contrast to the CG-DP steel, UFG-DP had 12.7% higher ultimate tensile strength and 10.7% greater uniform elongation. This is partly attributed to the increase in the initial strain-hardening rate, decrease in nanohardness ratio of martensite and ferrite. Moreover, a decreasing number of ferrite grains with {001} orientation increased the cleavage fracture stress and increased the crack initiation threshold stress with consequent improvement in ductility UFG-DP steel.

High resolution electron microscopy study of as-prepared and annealed tungsten-carbon multilayers

International Nuclear Information System (INIS)

Nguyen, T.D.; Gronsky, R.; Kortright, J.B.

1988-12-01

A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500/degree/C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period. As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions. 12 refs., 4 figs., 1 tab

Annealing of low-temperature GaAs studied using a variable energy positron beam

International Nuclear Information System (INIS)

Keeble, D.J.; Umlor, M.T.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

1993-01-01

The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 degree C were measured. A gallium vacancy concentration of approximately 3x10 17 cm -3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 degree C. The dominant positron traps in samples annealed at and below 400 degree C are distinct from those acting for samples annealed to 500 or 600 degree C. The change in S parameter for the 600 degree C annealed sample compared to the GaAs substrate, S LT,600 =1.047S sub , is consistent with divacancies or larger open volume defects

Microstructure and Texture Evolution in Temper Rolled Fe-Si Steels with New System Nano-Inhibitors Under the Dynamic Annealing Conditions

Directory of Open Access Journals (Sweden)

Kováč F.

2017-09-01

Full Text Available This work investigates the microstructure and texture evolution in grain-oriented electrotechnical steel with a new inhibition system based on vanadium carbides nano-particles. The novel approach for the preparation of this steel with appropriate final magnetic properties combines not only nanoinhibitors based on the vanadium carbides precipitations but also includes straininduced grain growth mechanism in combination with dynamic continuous annealing during the secondary recrystallization. The experimental grain-oriented steel with proposed new chemical composition was prepared in laboratory conditions. The texture analysis has shown that suggested procedure led the formation of sufficiently strong {110} Goss texture during the short time period of a final annealing process, which is comparable to that obtained in the conventionally treated grain-oriented steels.

Effect of high temperature annealing on defects and optical properties of ZnO single crystals

International Nuclear Information System (INIS)

Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

2012-01-01

Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of Annealing Heat Treatment to Characteristics of AlDC8 (Al-Si-Cu) Alloy

Energy Technology Data Exchange (ETDEWEB)

Moon, Kyung Man; Lee, Sung-Yul; Lee, Myeong Hoon; Jeong, Jae-Hyun [Korea Maritime and Ocean University, Busan (Korea, Republic of); Baek, Tae-Sil [Pohang College, Pohang (Korea, Republic of)

2015-12-15

ALDC8 (Al-Si-Cu) alloy has been often corroded with pattern of intergranular corrosion in corrosive environments. Thus, in order to improve its corrosion resistance, the effect of annealing heat treatment to corrosion resistance and hardness was investigated with parameters of heating temperatures such as 100 ℃, 200 ℃, 300 ℃, 400 ℃ and 500 ℃ for 1hr. The hardness was varied with annealing temperature and slightly decreased with annealing heat treatment. However, the relation between annealing temperature and hardness agreed not well each other. Corrosion potential was shifted to noble direction and corrosion current density was also decreased with increasing annealing temperature. Moreover, both AC impedance at 10 mHz and polarization resistance on the cyclic voltammogram curve were also increased with increasing annealing temperature. Furthermore, intergranular corrosion was somewhat observed in non heat treatment as well as annealing temperatures at 100 ℃, 200 ℃ and 300 ℃, while, intergranular corrosion was not nearly observed at annealing temperature of 400 ℃, 500 ℃. Consequently, it is considered that the annealing heat treatment of ALDC8 alloy may be an available method not only to inhibit its intergranular corrosion but also to improve its corrosion resistance.

Absence of redox processes in the annealing of permanganates

International Nuclear Information System (INIS)

Dedgaonkar, V.G.; Mitra, S.; Kulkarni, S.A.

1982-01-01

Initial retentions upon neutron activation of alkaline earth and Ni, Cu, Zn and Cd permanganates were in the range 8-17 per cent. Isostructural hexahydrates of Mg, Zn and Cd permanganates showed identifical values of approximately 8 per cent. Radiation annealing was negligible and the extent of thermal annealing was hardly 2-5 per cent in all the salts. Probable mechanisms are discussed. (author)

Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

International Nuclear Information System (INIS)

Galloway, R.B.

2002-01-01

It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

International Nuclear Information System (INIS)

Shams, Q.A.

1988-01-01

Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

Modular production line optimization: The exPLORE architecture

Directory of Open Access Journals (Sweden)

Spinellis Diomidis D.

2000-01-01

Full Text Available The general design problem in serial production lines concerns the allocation of resources such as the number of servers, their service rates, and buffers given production-specific constraints, associated costs, and revenue projections. We describe the design of exPLOre: a modular, object-oriented, production line optimization software architecture. An abstract optimization module can be instantiated using a variety of stochastic optimization methods such as simulated annealing and genetic algorithms. Its search space is constrained by a constraint checker while its search direction is guided by a cost analyser which combines the output of a throughput evaluator with the business model. The throughput evaluator can be instantiated using Markovian, generalised queueing network methods, a decomposition, or an expansion method algorithm.

Laser deposition of SnO2 thin films by continuous CO2 laser and their characterizations

International Nuclear Information System (INIS)

Kayed, K.; Awad, F.; Saiof, F.

2003-01-01

There are wide uses of tin oxide thin films, especially in the field of transparent conductors, solar cells, gas sensors and piezoelectric materials. Laser deposition is considered one of the most important techniques followed to obtain these films. In this research, we developed a technique to obtain homogeneous thin films of tin oxide depending on vaporization of pile targets of this oxide by continuous CO 2 laser in the atmosphere, with a fan which guarantees obtaining homogenous films. Some of these films were annealed in different conditions. The optical microscope images revealed the presence of high degree of homogeneity, while the x-ray study showed different crystallization grain orientations which depend on the preparation conditions. The preferred direction is (110). The optical absorption gives information about the value of the effective band gal for the samples before and after thermal annealing. We have found that some films E g =3.2 eV before annealing, and after long annealing they have E g =1.3 eV. In addition, the hard annealed thin films reveal anisotropy in the optical and electrical characteristics, they have different absorption coefficients in two perpendicular directions, also there is an electrical resistance anisotropy along these two directions especially after hard annealing. The E b was 0.73 eV before annealing, it became 0.37 eV for one direction and 0.32 eV for the other direction. (Authors)

Morphology and annealing kinetics of ion tracks in minerals

Directory of Open Access Journals (Sweden)

Ewing R. C.

2012-10-01

Full Text Available We have studied the morphology and annealing kinetics of ion tracks in Durango apatite using synchrotron small angle X-ray scattering. The non-destructive, artefact-free technique enables us to determine the track radii with a resolution of fractions of a nanometre. The tracks were generated using different heavy ions with energies between 185 MeV and 2.6 GeV. The track morphology is consistent with the formation of long cylindrical amorphous tracks. The annealing kinetics, measured by SAXS in combination with ex situ and in situ annealing experiments, suggests structural relaxation followed by recrystallisation of the damaged material. The measurement methodology shown here provides a new means for in-depth studies of ion-track formation in minerals under a wide variety of geological conditions.

Formability of Annealed Ni-Ti Shape Memory Alloy Sheet

Science.gov (United States)

Fann, K. J.; Su, J. Y.; Chang, C. H.

2018-03-01

Ni-Ti shape memory alloy has two specific properties, superelasiticity and shape memory effect, and thus is widely applied in diverse industries. To extend its application, this study attempts to investigate the strength and cold formability of its sheet blank, which is annealed at various temperatures, by hardness test and by Erichsen-like cupping test. As a result, the higher the annealing temperature, the lower the hardness, the lower the maximum punch load as the sheet blank fractured, and the lower the Erichsen-like index or the lower the formability. In general, the Ni-Ti sheet after annealing has an Erichsen-like index between 8 mm and 9 mm. This study has also confirmed via DSC that the Ni-Ti shape memory alloy possesses the austenitic phase and shows the superelasticity at room temperature.

Characterization for Ceramic-coated magnets using E-beam and thermal annealing methods

International Nuclear Information System (INIS)

Kim, Hyug Jong; Kim, Hee Gyu; Kang, In Gu; Kim, Min Wan; Yang, Ki Ho; Lee, Byung Cheol; Choi, Byung Ho

2009-01-01

Hard magnet was usually used by coating SiO 2 ceramic thick films followed by the thermal annealing process. In this work, the alternative annealing process for NdFeB magnets using e-beam sources(1∼2 MeV, 50∼400 kGy) was investigated. NdFeB magnets was coated with ceramic thick films using the spray method. The optimal annealing parameter for e-beam source reveals to be 1 MeV and 300 kGy. The sample prepared at 1 MeV and 300 kGy was characterized by the analysis of the surface morphology, film hardness, adhesion and chemical stability. The mechanical property of thick film, especially film hardness, is better than that of thermal annealed samples at 180 .deg. C. As a result, e-beam annealing process will be one of candidate and attractive heat treatment process. In future, manufacturing process will be carried out in cooperation with the magnet company

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar

2009-01-01

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10 14 to 5x10 16 cm -2 . Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V Ga O N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: abdulmajid40@yahoo.com; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: akbar@qau.edu.pk

2009-01-15

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10{sup 14} to 5x10{sup 16} cm{sup -2}. Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V{sub Ga}O{sub N} complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C.

Maximum-Entropy Inference with a Programmable Annealer

Science.gov (United States)

Chancellor, Nicholas; Szoke, Szilard; Vinci, Walter; Aeppli, Gabriel; Warburton, Paul A.

2016-03-01

Optimisation problems typically involve finding the ground state (i.e. the minimum energy configuration) of a cost function with respect to many variables. If the variables are corrupted by noise then this maximises the likelihood that the solution is correct. The maximum entropy solution on the other hand takes the form of a Boltzmann distribution over the ground and excited states of the cost function to correct for noise. Here we use a programmable annealer for the information decoding problem which we simulate as a random Ising model in a field. We show experimentally that finite temperature maximum entropy decoding can give slightly better bit-error-rates than the maximum likelihood approach, confirming that useful information can be extracted from the excited states of the annealer. Furthermore we introduce a bit-by-bit analytical method which is agnostic to the specific application and use it to show that the annealer samples from a highly Boltzmann-like distribution. Machines of this kind are therefore candidates for use in a variety of machine learning applications which exploit maximum entropy inference, including language processing and image recognition.

Resistivity behavior in isothermal annealing of Pd-H(D) alloys around 50 K

International Nuclear Information System (INIS)

Yamakawa, Kohji; Maeta, Hiroshi

2004-01-01

The behavior of electrical resistivity during hydrogen (deuterium) ordering is investigated for Pd-H(D) alloys of various hydrogen concentrations around 50 K. The disordered hydrogen (deuterium) atoms are introduced by quenching from 100 K into liquid helium immediately before isothermal annealings. The disordered atoms order by migration of the atoms during the heating-up of the specimens. On the isothermal curves of the resistivity in the high temperature range, the resistivity increases at first and then adopts a constant value dependent on the annealing temperature. On the other hand, the resistivity increases and then decreases during isothermal annealing in the low temperature range, nevertheless the ordering is progressing. The annealing time, at which the resistivity maximum appears, and the resistivity value of the maximum increase with decreasing annealing temperature. Furthermore, the decreasing resistivity after the maximum saturates to a value dependent on each annealing temperature. Therefore, it becomes clear that an equilibrium amount of ordering depends on the temperature and the resistivity increases in the early stage of hydrogen (deuterium) ordering and decreases in the later stage. The resistivity maximum in the isothermal annealing curve is caused by the nucleation and growth of ordered domains of hydrogen (deuterium) atoms

Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

International Nuclear Information System (INIS)

Wu Shen; Sun Aizhi; Zhai Fuqiang; Wang Jin; Zhang Qian; Xu Wenhuan; Logan, Philip; Volinsky, Alex A.

2012-01-01

This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites. - Highlights: ► Silicone uniformly coated the powder, increased the operating frequency of SMCs. ► The annealing treatment increased the DC properties of SMCs. ► Annealing at 580 °C increased the maximum permeability by 72.5%. ► Compared with epoxy coated, the SMCs had higher resistivity annealing at 580 °C.

Effect of pressure on the radiation annealing of recoil atoms in chromates

International Nuclear Information System (INIS)

Stamouli, M.I.

1986-01-01

The effect of pressure on the annealing of recoil atoms by gamma radiation in neutron irradiated potassium chromate, ammonium chromate and ammonium dichromate was studied. In potassium chromate the pressure applied before the gamma-irradiation was found to retard the radiation annealing process. In ammonium chromate and ammonium dichromate the radiation annealing was found to be enhanced in the compressed samples in comparison to the noncompressed ones. (author)

Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature

International Nuclear Information System (INIS)

Chithambo, M.L.

2015-01-01

The influence of annealing, irradiation dose, preheating and measurement temperature on luminescence lifetimes has been studied in quartz annealed at 1000 °C. The measurements were supplemented by studies on quartz annealed at 900 and 800 °C. Lifetimes increase with dose as well as with temperature and duration of annealing between 800 and 1000 °C. Preheating produces the same effect. The changes are accounted for in terms of hole-transfer from the non-radiative luminescence centre to and between radiative centres. The influence of measurement temperature on lifetimes depends on whether the stimulation is carried out from ambient to 200 °C or otherwise. This result is unlike that in quartz annealed at or below 500 °C where lifetimes are independent of the direction of heating. In particular, lifetimes decrease monotonically when measurements are made from 20 to 200 °C but not when recorded from 200 to 20 °C. The latter produces a pattern resembling that in quartz annealed up to 500 °C. The results are concluded as evidence of thermal effects on separate luminescence centres. In support of this, different values of the activation energy for thermal quenching were found for each supposed luminescence centre. The change of the corresponding luminescence intensity with temperature is also qualitatively consistent with this notion. - Highlights: • Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature is reported. • Lifetimes increase with dose, annealing between 800 and 1000 °C, and preheating. • Lifetimes under stimulation temperature are affected by direction of heating. • Changes are accounted for in terms of hole-transfer luminescence centres.

Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

International Nuclear Information System (INIS)

Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

1997-01-01

Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

A hybrid metaheuristic method to optimize the order of the sequences in continuous-casting

Directory of Open Access Journals (Sweden)

Achraf Touil

2016-06-01

Full Text Available In this paper, we propose a hybrid metaheuristic algorithm to maximize the production and to minimize the processing time in the steel-making and continuous casting (SCC by optimizing the order of the sequences where a sequence is a group of jobs with the same chemical characteristics. Based on the work Bellabdaoui and Teghem (2006 [Bellabdaoui, A., & Teghem, J. (2006. A mixed-integer linear programming model for the continuous casting planning. International Journal of Production Economics, 104(2, 260-270.], a mixed integer linear programming for scheduling steelmaking continuous casting production is presented to minimize the makespan. The order of the sequences in continuous casting is assumed to be fixed. The main contribution is to analyze an additional way to determine the optimal order of sequences. A hybrid method based on simulated annealing and genetic algorithm restricted by a tabu list (SA-GA-TL is addressed to obtain the optimal order. After parameter tuning of the proposed algorithm, it is tested on different instances using a.NET application and the commercial software solver Cplex v12.5. These results are compared with those obtained by SA-TL (simulated annealing restricted by tabu list.

Effect of annealing on photoluminescence properties of neon implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Zhu, J J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Wang, Y T [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Lu, G J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W B [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, L Q [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, Z S [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhao, D G [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, S M [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Jiang, D S; Yang, H [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

2008-01-21

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10{sup 14} to 9 x 10{sup 15} cm{sup -2} and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10{sup 15} cm{sup -2}. The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V{sub Ga}O{sub N} complexes caused by high energy ion implantation.

Effect of annealing on photoluminescence properties of neon implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar; Zhu, J J; Wang, Y T; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Zhao, D G; Zhang, S M; Jiang, D S; Yang, H

2008-01-01

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10 14 to 9 x 10 15 cm -2 and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10 15 cm -2 . The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V Ga O N complexes caused by high energy ion implantation

a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

Energy Technology Data Exchange (ETDEWEB)

Rojas-Lopez, M., E-mail: marlonrl@yahoo.com.mx [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Orduna-Diaz, A.; Delgado-Macuil, R.; Gayou, V.L.; Bibbins-Martinez, M. [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Torres-Jacome, A.; Trevino-Palacios, C.G. [INAOE, Tonantzintla, Puebla, Pue. 72000 (Mexico)

2010-10-25

We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 deg. C for up to 14 h. The annealed amorphous films were analyzed using atomic force microscopy, Raman and FTIR spectroscopy. Films deposited on glass substrate experienced an amorphous-crystalline phase transition after annealing because of the metal-induced crystallization effect, reaching approximately 70% conversion after 14 h of annealing. An absorption frequency of the TO-phonon mode that varies systematically with the substoichiometry of the silicon oxide in the 1046-1170 cm{sup -1} region was observed, revealing the reactivity of the film with the annealing time. For similar annealing time, films deposited on mono-crystalline silicon substrate remained mainly amorphous with minimal Si-crystalline formation. Therefore, the crystalline formations and the shape of the films surfaces depends on the annealing time as well as on the substrate employed during the deposition process of the a-Si:H film.

Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

International Nuclear Information System (INIS)

Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

2016-01-01

We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

Effect of annealing on phase transition in poly(vinylidene fluoride)

Indian Academy of Sciences (India)

Here we report the crystallization of both and -phase PVDF films by varying preparation temperature using DMSO solvent. The -phase PVDF films were annealed at 70, 90, 110, 130 and 160°C for five hours. The changes in the phase contents in the PVDF at different annealing conditions have been described.

Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-03-15

In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

Energy Technology Data Exchange (ETDEWEB)

Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

2016-10-15

A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

Simulation of short-term annealing of displacement cascades in FCC metals

International Nuclear Information System (INIS)

Heinisch, H.L.; Doran, D.G.; Schwartz, D.M.

1980-01-01

Computer models have been developed for the simulation of high energy displacement cascades. The objective is the generation of defect production functions for use in correlation analysis of radiation effects in fusion reactor materials. In particular, the stochastic cascade annealing simulation code SCAS has been developed and used to model the short-term annealing behavior of simulated cascades in FCC metals. The code is fast enough to make annealing of high energy cascades practical. Sets of cascades from 5 keV to 100 keV in copper were generated by the binary collision code MARLOWE

Proximity annealing of sulfur-implanted gallium arsenide using a strip heater

International Nuclear Information System (INIS)

Banerjee, S.; Baker, J.

1985-01-01

A graphite strip heater has been employed for rapid (-- 30 s) thermal annealing (RTA), at temperatures between 850 and 1150 0 C, of Cr-doped GaAs implanted with 120 keV 32 S + with doses between 10 13 and 10 15 cm -2 . In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr. (author)

Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

Directory of Open Access Journals (Sweden)

Manizheh Navasery

2012-11-01

Full Text Available Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD and Fourier Transform Infrared spectroscopy (FTIR, Transmission electron microscopy (TEM, and Thermogravimetry (TGA. The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4 nanoparticles and tetraborate (CaB4O7 nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures.

Evolution of mechanical properties of ultrafine grained 1050 alloy annealing with electric current

International Nuclear Information System (INIS)

Cao, Yiheng; He, Lizi; Zhang, Lin; Zhou, Yizhou; Wang, Ping; Cui, Jianzhong

2016-01-01

The tensile properties and microstructures of 1050 aluminum alloy prepared by equal channel angular pressing at cryogenic temperature (cryoECAP) after electric current annealing at 90–210 °C for 3 h were investigated by tensile test, electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM). An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C, due to a significant decrease in the density of mobile dislocations after annealing, and thus a higher yield stress is required to nucleate alternative dislocation sources during tensile test. The electric current can enhance the motion of dislocations, lead to a lower dislocation density at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. Moreover, the electric current can promote the migration of grain boundaries at 150–210 °C, result in a larger grain size at 150 °C and 210 °C, and thus causes a lower yield stress. The sample annealed with electric current has a lower uniform elongation at 90–120 °C, and the deviation in the uniform elongation between samples annealed without and with electric current becomes smaller at 150–210 °C. - Highlights: • An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C. • The d. c. current can enhance the motion of dislocations at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. • The d. c. current can promote the grain growth at 150–210 °C, and thus cause a lower yield stress. • The DC annealed sample has a lower uniform elongation at 90–120 °C.

Projection of the annealing behavior of irradiated Si sensors in the LHC environment

CERN Document Server

Chatterji, S; Bhardwaj, N; Chauhan, S S; Choudhary, B C; Gupta, P; Jha, M; Kumar, A; Naimuddin, M; Ranjan, K; Shivpuri, R K; Srivastava-Ajay, K

2004-01-01

The study of the radiation tolerance and subsequent annealing effects on p+-n-n+ silicon micro strip detectors has been performed as a part of R&D program for the preshower detector in the CMS experiment. CMS silicon strip sensors were irradiated with 24 GeV protons at CERN proton synchrotron (PS) to a total fluence of 3*10/sup 14/ p/cm/sup 2 /. Sensors were stored in freezer after irradiation and I-V and C-V measurements were carried out. Variation in full depletion voltage and leakage current have been studied as a function of annealing time. The breakdown performance of the device actually improves after irradiation due to the beneficial effect of type-inversion. The breakdown voltage increases further with annealing time. However, the leakage current increases tremendously just after irradiation. As the sensors are annealed, there is a drop in leakage current. The rate of annealing is observed to be temperature dependent. Hence in terms of leakage current, it seems that room temperature annealing is b...

Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

International Nuclear Information System (INIS)

Rhee, Joo Yull

1999-01-01

The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder → order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by presumption that the recrystallization would be realized in such a way that the average atomic spacing would be reduced

Quantum annealing for combinatorial clustering

Science.gov (United States)

Kumar, Vaibhaw; Bass, Gideon; Tomlin, Casey; Dulny, Joseph

2018-02-01

Clustering is a powerful machine learning technique that groups "similar" data points based on their characteristics. Many clustering algorithms work by approximating the minimization of an objective function, namely the sum of within-the-cluster distances between points. The straightforward approach involves examining all the possible assignments of points to each of the clusters. This approach guarantees the solution will be a global minimum; however, the number of possible assignments scales quickly with the number of data points and becomes computationally intractable even for very small datasets. In order to circumvent this issue, cost function minima are found using popular local search-based heuristic approaches such as k-means and hierarchical clustering. Due to their greedy nature, such techniques do not guarantee that a global minimum will be found and can lead to sub-optimal clustering assignments. Other classes of global search-based techniques, such as simulated annealing, tabu search, and genetic algorithms, may offer better quality results but can be too time-consuming to implement. In this work, we describe how quantum annealing can be used to carry out clustering. We map the clustering objective to a quadratic binary optimization problem and discuss two clustering algorithms which are then implemented on commercially available quantum annealing hardware, as well as on a purely classical solver "qbsolv." The first algorithm assigns N data points to K clusters, and the second one can be used to perform binary clustering in a hierarchical manner. We present our results in the form of benchmarks against well-known k-means clustering and discuss the advantages and disadvantages of the proposed techniques.

Annealing induced structural evolution and electrochromic properties of nanostructured tungsten oxide films

Energy Technology Data Exchange (ETDEWEB)

Wu, Ching-Lin [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Lin, Chung-Kwei [School of Dental Technology, Taipei Medical University, Taipei City 110, Taiwan, ROC (China); Wang, Chun-Kai [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Wang, Sheng-Chang [Department of Mechanical Engineering, Southern Taiwan University, Tainan 710, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: JLH888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

2013-12-31

The effect of microstructure on the optical and electrochemical properties of nanostructured tungsten oxide films was evaluated as a function of annealing temperature. The films using block copolymer as the template were prepared from peroxotungstic acid (PTA) by spin-coating onto the substrate and post-annealed at 250–400 °C to form tungsten oxide films with nanostructure. The microstructure of the films was measured by X-ray diffraction and surface electron microscopy. The films annealed at temperatures below 300 °C are characterized by amorphous or nanocrystalline structures with a pore size of less than 10 nm. The evaluated annealing temperature caused a triclinic crystalline structure and microcracks. Cyclic voltammetry measurements were performed in a LiClO{sub 4}-propylene carbonate electrolyte. The results showed that the ion inserted capacity were maximized for films annealed at 300 °C and decreased with the increasing of annealing temperature. The electrochromic properties of the nanostructured tungsten oxide films were evaluated simultaneously by potentiostat and UV–vis spectroscopy. The films annealed at 300 °C exhibit high transmission modulation (∆T ∼ 40%) at λ = 633 nm and good kinetic properties. As a result, the correlation between the microstructure and kinetic properties was established, and the electrochromic properties have been demonstrated. - Highlights: • Surfactant-assisted WO{sub 3} films have been prepared by sol–gel method. • Nanostructure of porous WO{sub 3} film is retained after crystallization. • Kinetic properties of WO{sub 3} can be improved by nanostructure and crystallinity.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

Science.gov (United States)

Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

2014-06-01

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

Embrittlement recovery due to annealing of reactor pressure vessel steels

International Nuclear Information System (INIS)

Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

1998-01-01

The irradiation embrittlement of nuclear reactor pressure vessels (RPV) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. The objective of this work was to analyze the pertinent data and develop quantitative models for estimating the recovery in 41 J (30 ft-lb) Charpy transition temperature (TT) and Charpy upper shelf energy (USE) due to annealing. An analysis data base was developed, reviewed for completeness and accuracy, and documented as part of this work. Models were developed based on a combination of statistical techniques, including pattern recognition and transformation analysis, and the current understanding of the mechanisms governing embrittlement and recovery. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and a surrogate hardness data base. This work demonstrates that microhardness recovery is a good surrogate for shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes. (orig.)

Valence control of cobalt oxide thin films by annealing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

2011-02-01

The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Annealing of the RPV of unit 1 in Loviisa 1996

International Nuclear Information System (INIS)

Ahlstrand, R.; Kohopaeae, J.

1997-01-01

The critical circumferential core area weld of Loviisa 1 reactor pressure vessel was successfully annealed during the refueling and maintenance outage in August 1996. The weld was heated up to the annealing temperature of 475 deg.C and this temperature was maintained for 100 hours. The work was implemented by Skoda Nuclear Machinery Ltd as a main supplier representing consortium of Skoda Nuclear machinery Ltd from Czech Republic and Bohunice Nuclear Power Plant from Slovak Republic. Comprehensive material testing programs have been carried out to ensure the licensing of the annealing. Part of these programs have not yet been finished and are still going on. In the domestic programs sophisticated testing techniques including electric discharge machining and reconstitution techniques were used. Thus already tested surveillance specimens halves could be used as authentic material. The licensing work has been carried out mainly by VTT in Finland and Moht Otjig RM in Russia. A new comprehensive surveillance program has started to follow the embrittlement of the RPV after annealing. (author)

Rapid Thermal annealing of silicon layers amorphized by ion implantation

International Nuclear Information System (INIS)

Hasenack, C.M.

1986-01-01

The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

International Nuclear Information System (INIS)

Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

2015-01-01

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10 26 m −2 ) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min −1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

Science.gov (United States)

Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

2015-08-01

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 1026 m-2) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min-1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

Energy Technology Data Exchange (ETDEWEB)

Shimada, Masashi, E-mail: Masashi.Shimada@inl.gov [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Hara, Masanori [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Otsuka, Teppei [Kyushu University, Interdisciplinary Graduate School of Engineering Science, Higashi-ku, Fukuoka (Japan); Oya, Yasuhisa [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Hatano, Yuji [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

2015-08-15

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10{sup 26} m{sup −2}) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min{sup −1} up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

The effect of annealing and desulfurization on oxide spallation of turbine airfoil material

International Nuclear Information System (INIS)

Briant, C.L.; Murphy, W.H.; Schaeffer, J.C.

1995-01-01

In this paper the authors report a study that addresses the sulfur-induced spallation theory. Previous work has shown that a high temperature anneal in hydrogen desulfurizes nickel-base alloys and greatly improves their resistance to oxide spallation. The authors will show that such an anneal can be applied successfully to a Ni-base airfoil material. Both Auger segregation experiments and chemical analyses show that this anneal desulfurizes the material, at least in the absence of yttrium. However, the results suggest that factors other than desulfurization may be contributing to the improvement in spallation resistance produced by the anneal

Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

International Nuclear Information System (INIS)

Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

1990-01-01

Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly