WorldWideScience

Sample records for compound semiconductor electronics

  1. Nanometre-scale electronics with III-V compound semiconductors.

    Science.gov (United States)

    del Alamo, Jesús A

    2011-11-16

    For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal-oxide-semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors. © 2011 Macmillan Publishers Limited. All rights reserved

  2. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  3. Ion implantation in compound semiconductors for high-performance electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-05-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

  4. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  5. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  6. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. Ultraviolet photosulfidation of III-V compound semiconductors for electronic passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zavadil, K.R.; Ashby, C.I.H.; Howard, A.J.; Hammons, B.E.

    1993-10-01

    A new vacuum-compatible passivation technique for III-V compound semiconductors has been developed. Sulfur passivation of GaAs(100) is produced by ultraviolet photolytic deposition of a sulfide species from vapor phase elemental sulfur. Photoluminescence studies of the photosulfided GaAs reveal a degree of passivation greater than or equal to that produced by conventional (NH{sub 4}{sub 2}S) solution treatment. X-ray Photoelectron Spectroscopy has shown that the sulfur resides on the surface as a single reduced sulfur species, either as sulfide of disulfide, indicating complete fragmentation of the S{sub 8} ring by UV light in proximity to the surface. The degree of photosulfidation depends strongly on surface preparation as demonstrated by the described surface oxide removal studies.

  9. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  10. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Chang, P.C.; Hietala, V.M.; Sloan, L.R.

    1999-02-18

    The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.

  11. Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic Applications

    Science.gov (United States)

    Goue, Ouloide Yannick

    Single crystals of binary and ternary compounds are touted to replace silicon for specialized applications in the semiconductor industry. However, the relative high density of structural defects in those crystals has hampered the performance of devices built on them. In order to enhance the performance of those devices, structurally perfect single crystals must be grown. The aim of this thesis is to investigate the interplay between crystal growth process and crystal quality as well as structural defect types and transport property. To this end, the thesis is divided into two parts. The first part provides a general review of the theory of crystal growth (chapter I), an introduction to the materials being investigated (chapter II and III) and the characterization techniques being used (chapter IV). • In chapter I, a brief description of the theory of crystal growth is provided with an eye towards the driving force behind crystal nucleation and growth along with the kinetic factors affecting crystal growth. The case of crystal growth of silicon carbide (SiC) by physical vapor transport (PVT) and chemical vapor deposition (CVD) is discussed. The Bridgman, travelling heater method (THM) and physical transport growth of cadmium zinc telluride (CZT) is also treated. In chapters II and III, we introduce the compound materials being investigated in this study. While a description of their crystal structure and properties is provided, the issues associated with their growth are discussed. In chapter IV, a description of the characterization techniques used in these studies is presented. These techniques are synchrotron X-ray topography (SXRT), transmission electron microscopy, transmission infrared microscopy (TIM), micro-Raman spectroscopy (muRS) and light microscopy. Extensive treatment of SXRT technique is also provided. In the second part, the experimental results obtained in the course of these studies are presented and discussed. These results are divided into

  12. Reliability and radiation effects in compound semiconductors

    CERN Document Server

    Johnston, Allan

    2010-01-01

    This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

  13. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  14. Electronic Properties of Semiconductor Interfaces.

    Science.gov (United States)

    1983-02-01

    AD-A130 745 ELECTRONIC PROPERTIES OF SEMICONDUCTOR INTERFACES(U) /; UNIVERSIDAD AUfONOMA DE MADRID (SPAIN) DEPT DE FISICA DEL ESTADO SOLIDO F FLORES...Estado Solido 6.11.02A Universidad Autonoma Cantoblanco, Madrid 34. Spain 1T161102BH57-03 11. CONTROLLING OFFICE NAME AND ADDRESS 12. REPORT DATE...different supe4layeru formed by the superlayers (0,1), (2,3), (4,5),... and so on. Note that the number of super - layers defined inside each 6upettayer

  15. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  16. EDITORIAL: Enhance your outlook with Compound Semiconductor

    Science.gov (United States)

    Bedrock, Claire

    2007-12-01

    An overwhelming proportion of the articles published in this journal come under the heading of applied research. In this field research findings impact tomorrow's products, and so it's important to keep tabs on these developments. Grant applications, for example, can carry extra weight when the potential benefits to industry are outlined alongside the gains to fundamental science. What's more, it's just plain interesting to track how key breakthroughs in understanding can drive improvements in commercial devices. Within our publication group we offer free resources that can help you keep pace with trends in part of this sector. Compound Semiconductor magazine and its associated website, compoundsemiconductor.net, cover III-V, III-N, SiC and SiGe research in academia and industry, alongside all the business news and key manufacturing technology. A high proportion of our authoritative and timely content is exclusive, and you can access it for free by completing a simple registration procedure at compoundsemiconductor.net. Three examples of feature articles published this year in Compound Semiconductor include: • Non-polar GaN reaches tipping point by Steven DenBaars, Shuji Nakamura and Jim Speck from the University of California, Santa Barbara. Although conventional GaN LEDs are a great commercial success, they suffer from an intrinsic weakness—internal electric fields that pull apart the electrons and holes and ultimately limit efficiency. However, this problem can be overcome by growing nitrides on alternate crystal planes. Although early attempts were unsuccessful, due to high defect densities in the epilayers, this is not the case with growth on the latest Mitsubishi substrates that can lead to external quantum efficiencies of 45%. In this article the authors describe the development of their non-polar material, and their promising results for LEDs and laser diodes. • Inverting the triple junction improves efficiency and flexibility by Paul Sharps and

  17. Electron gas grid semiconductor radiation detectors

    Science.gov (United States)

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  18. Compound semiconductor materials, devices and circuits

    Science.gov (United States)

    Shealy, J. R.; Eastman, L. F.; Wolf, E. D.; Tasker, P. J.; Krusius, J. P.

    1988-06-01

    This one year research program on compound semiconductor materials growth, devices and circuits has focused on: (1) organometallic vapor phase epitaxy (OMVPE) of GaInP/GaAs and AlInP/GaInP superlattices; (2) enhancement of heterostructure device speed performance via strain layer superlattices and mushroom gates in modulation doped FET's (MODFET's), and inserted tunnel barriers heterojunction bipolar devices (HBT); (3) fabrication and characterization of MODFET devices with gate lengths to 50 nm; (4) self-consistent Monte Carlo transport formulation and its application to small graded heterostructure devices; (5) optical modulation based on the quantum confined Stark effect; and (6) femtosecond spectroscopy of hot carrier processes using the visible Rh6G laser and a new UV BaB2O4 laser.

  19. Einstein relation in compound semiconductors and their nanostructures

    CERN Document Server

    Bhattacharya, Sitangshu

    2008-01-01

    Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.

  20. Semiconductor Nanostructures Quantum States and Electronic Transport

    CERN Document Server

    Ihn, Thomas

    2009-01-01

    This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with the basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It contains material aspects such as band e

  1. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  2. Physics and chemistry of III-V compound semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wilmsen, C.W.

    1985-01-01

    This book brings together fundamental and practical knowledge on the physics and chemistry of the III-V compounds with metals and dielectrics. The authors provide concise overviews of these areas with many tables and graphs which compare and summarize the literature. The major divisions of the book cover semiconductor surface interactions, Schottky diodes and ohmic contacts, the deposited insulator, electrical properties of insulator-semiconductor interfaces, inversion layer transport, interfacial constraints on MIS devices, and oxide semiconductor interfaces.

  3. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  4. Electrons in metals and semiconductors

    CERN Document Server

    Chambers, R G

    1990-01-01

    This book is part of a series of short texts for students, scientists and engineers who seek to broaden their knowledge of the physics underlying modern technology. This text aims to provide a review of the fundamental physics and recent developments in the area of solid-state physics. The book contains a range of topics discussing metals and semiconductors with references to treatises and the primary literature to facilitate further study. The book is intended to be useful to those engaged in research and development, who require a summary of a topic in physics or a new application of physical principles in their work. Many of the the texts will also be useful for final year undergraduate and postgraduate students.

  5. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 26; Issue 1. Many electron effects in ... Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, ... Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of ...

  6. Reactive codoping of GaAlInP compound semiconductors

    Science.gov (United States)

    Hanna, Mark Cooper [Boulder, CO; Reedy, Robert [Golden, CO

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  7. Semiconductor technologies in the era of electronics

    CERN Document Server

    Kang, Yong Hoon

    2014-01-01

    Technological advances in the field of materials, devices, circuits, and systems began by the discovery of new properties of objects, or the entrepreneurship with the applications of unique or practical concepts for commercial goods. To implement products using these findings and challenges textbook knowledge is usually sufficient. Semiconductor Technologies in the Era of Electronics therefore does not aim to look deeper in certain areas but it offers a broad and comprehensive overview of the field to: - Experts of specific knowledge who want to expand the overall understanding to different areas - Persons who wish to understand the principle of electronic devices often seen in everyday life - Entrepreneurs interested in the innovations and changes of semiconductor technologies and overall electronics industry. A profound and theoretical approach is therefore used and special cases essential to understanding these important concept are presented.

  8. Ab initio calculations on the structural, mechanical, electronic, dynamic, and optical properties of semiconductor half-Heusler compound ZrPdSn

    Energy Technology Data Exchange (ETDEWEB)

    Ciftci, Yasemin Oe. [Gazi Univ., Ankara (Turkey). Dept. of Physics; Coban, Cansu [Balikesir Univ. (Turkey). Dept. of Physics

    2016-05-01

    The structural, mechanical, electronic, dynamic, and optical properties of the ZrPdSn compound crystallising into the MgAgAs structure are investigated by the ab initio calculations based on the density functional theory. The lattice constant, bulk modulus, and first derivative of bulk modulus were obtained by fitting the calculated total energy-atomic volume results to the Murnaghan equation of state. These results were compared to the previous data. The band structure and corresponding density of states (DOS) were also calculated and discussed. The elastic properties were calculated by using the stress-strain method, which shows that the MgAgAs phase of this compound is mechanically stable. The presented phonon dispersion curves and one-phonon DOS confirms that this compound is dynamically stable. In addition, the heat capacity, entropy, and free energy of ZrPdSn were calculated by using the phonon frequencies. Finally, the optical properties, such as dielectric function, reflectivity function, extinction coefficient, refractive index, and energy loss spectrum, were obtained under different pressures.

  9. "Property Phase Diagrams" for Compound Semiconductors through Data Mining.

    Science.gov (United States)

    Srinivasan, Srikant; Rajan, Krishna

    2013-01-21

    This paper highlights the capability of materials informatics to recreate "property phase diagrams" from an elemental level using electronic and crystal structure properties. A judicious selection of existing data mining techniques, such as Principal Component Analysis, Partial Least Squares Regression, and Correlated Function Expansion, are linked synergistically to predict bandgap and lattice parameters for different stoichiometries of GaxIn1-xAsySb1-y, starting from fundamental elemental descriptors. In particular, five such elemental descriptors, extracted from within a database of highly correlated descriptors, are shown to collectively capture the widely studied "bowing" of energy bandgaps seen in compound semiconductors. This is the first such demonstration, to our knowledge, of establishing relationship between discrete elemental descriptors and bandgap bowing, whose underpinning lies in the fundamentals of solid solution thermodyanamics.

  10. Microscopical Studies of Structural and Electronic Properties of Semiconductors

    CERN Multimedia

    2002-01-01

    The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

  11. Coherent and ultrafast optoelectronics in III-V semiconductor compounds

    Energy Technology Data Exchange (ETDEWEB)

    Foerst, M.; Nagel, M.; Awad, M.; Waechter, M.; Kurz, H. [Institut fuer Halbleitertechnik, RWTH Aachen University, 52074 Aachen (Germany); Dekorsy, T. [Universitaet Konstanz, Fachbereich Physik, 78457 Konstanz (Germany)

    2007-08-15

    III-V compound semiconductors offer a fascinating multitude of phenomena which have become accessible via ultrafast time-resolved spectroscopy. Coherent vibronic and electronic dynamics are prepared by excitation with taylored femtosecond laser pulses. The analysis of their temporal dephasing or decay provides deep insights into the interaction between electronic and vibronic degrees of freedom and the surrounding bath in high purity quantum structures. In contrast to coherent electronic or vibronic states, deliberately introduced growth defects can be used to drastically shorten the lifetime of optically excited carriers. Sub-picosecond carrier lifetimes open the possibility to realize ultrafast saturable absorbers and optoelectronic transducer elements. They are particularly important as key elements in THz technology, such as efficient THz emitters, detectors, and for on-chip THz technology. This paper summarizes the most distinguished results relevant in the context of ultrafast optoelectronics and THz technology obtained in close collaboration with the Paul-Drude-Institute Berlin over the past decade. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. N-doping of organic semiconductors by bis-metallosandwich compounds

    Energy Technology Data Exchange (ETDEWEB)

    Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

    2016-01-05

    The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

  13. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  14. Transistor electronics use of semiconductor components in switching operations

    CERN Document Server

    Rumpf, Karl-Heinz

    2014-01-01

    Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

  15. Electron states in semiconductor quantum dots.

    Science.gov (United States)

    Dhayal, Suman S; Ramaniah, Lavanya M; Ruda, Harry E; Nair, Selvakumar V

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  16. Semiconductor diode characterization for total skin electron irradiation.

    Science.gov (United States)

    Madrid González, O A; Rivera Montalvo, T

    2014-01-01

    In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control. Copyright © 2013 Elsevier Ltd. All rights reserved.

  17. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  18. III-V compound semiconductor transistors—from planar to nanowire structures

    OpenAIRE

    Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jesús A.

    2017-01-01

    Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic device roadmap to further improve future performance increases of integrated circuits is required to propel the electronics industry. Attention is turning to III-V compound semiconductors that are well positioned to replace silicon as the base material in logic switching devices. Their outstanding electron transport properties and the possibility to tune heterostructures provide tremendous opport...

  19. Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Xiwei Zhang

    2017-10-01

    Full Text Available Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

  20. Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells

    Directory of Open Access Journals (Sweden)

    Ryosuke Motoyoshi

    2010-01-01

    Full Text Available Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS- based solar cells with titanium dioxide (TiO2 were produced on F-doped SnO2 (FTO. A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO- and cuprous oxide- (Cu2O- based solar cells with fullerene (C60 were also fabricated on FTO and indium tin oxide (ITO. The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.

  1. Effective Electron Mass in Low-Dimensional Semiconductors

    CERN Document Server

    Bhattacharya, Sitangshu

    2013-01-01

    This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped sem...

  2. Electron transfer at sensitized semiconductor electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Spitler, M.T.

    1977-03-01

    Electron transfer from the excited state of sensitizing dyes to the conduction band of semiconductors has been studied through photoelectrochemical techniques. Two systems were analyzed in detail: rhodamine B on ZnO and rose bengal on TiO/sub 2/. Prior to electrochemical experimentation, the adsorption characteristics of these dyes were investigated using ZnO, ZnS, and TiO/sub 2/ single crystals as substrates. Absorbance measurements of the adsorbed dye were taken as a function of the solution concentration of the dye. Adsorption isotherms heats of adsorption were also established; they were similar to literature data reported for adsorption of these dyes on powdered substrates. Using the absorbance data, the quantum efficiency for photoinjection of electrons from rhodamine B into a ZnO electrode was determined to be 2.7 x 10/sup -2/. This value was independent of the dye surface concentration down to 50% coverage of the electrode. With the assumption that not all of the rhodamine B adsorbed on the electrode has the same rate of electron injection, a kinetic model for the time decay of the photocurrent was developed; data were analyzed according to this theory. A rate constant for photoreduction of the adsorbed dye was determined for the reducing agents. 86 references.

  3. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  4. Pulsed laser ablation growth and doping of epitaxial compound semiconductor films

    Energy Technology Data Exchange (ETDEWEB)

    Lowndes, D.H.; Rouleau, C.M.; Geohegan, D.B.; Budai, J.D.; Poker, D.B. [Oak Ridge National Lab., TN (United States). Solid State Div.; Puretzky, A.A. [Inst. of Spectroscopy, Troitsk (Russian Federation); Strauss, M.A.; Pedraza, A.J.; Park, J.W. [Univ. of Tennessee, Knoxville, TN (United States)

    1995-12-01

    Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories.

  5. Electron-phonon interaction in a semiconductor quantum wire embedded into the semiconductor medium

    CERN Document Server

    Zharkoj, V P

    2002-01-01

    The renormalization of electron ground state energy due to the different types of interaction with confined (L) and interface (I) phonons in a semiconductor cylindrical quantum wire (QW) embedded into the semiconductor medium by the example of a HgS/CdS nanosystem.

  6. Contorted Organic Semiconductors for Molecular Electronics

    Science.gov (United States)

    Zhong, Yu

    Chapter 4, I discuss helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor-acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometers in diameter for efficient exciton separation and charge transport. This study describes a new motif for designing highly efficient acceptors for organic solar cells. In Chapter 5, I compare analogous cyclic and acyclic pi-conjugated molecules as n-type electronic materials and find that the cyclic molecules have numerous benefits in organic photovoltaics. We designed two conjugated cycles for this study. Each comprises four subunits; one combines four electron-accepting, redox-active, diphenyl-perylenediimide subunits, and the other alternates two electron-donating bithiophene units with two diphenyl-perylenediimide units. We compare the macrocycles to acyclic versions of these molecules and find that, relative to the acyclic analogs, the conjugated macrocycles have bathochromically shifted UV-vis absorbances and are more easily reduced. In blended films, macrocycle-based devices show higher electron mobility and good morphology. All of these factors contribute to the more than doubling of the power conversion efficiency observed in organic photovoltaic devices with these macrocycles as the n-type, electron transporting material. This study highlights the importance of geometric design in creating new molecular semiconductors. In Chapter 6, I describe a new molecular design that enables high performance organic photodetectors. We use a rigid, conjugated macrocycle as the electron acceptor in devices to obtain high photocurrent and low dark current. We directly compare the

  7. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  8. Organophosphorus Compounds in Organic Electronics.

    Science.gov (United States)

    Shameem, Muhammad Anwar; Orthaber, Andreas

    2016-07-25

    This Minireview describes recent advances of organophosphorus compounds as opto-electronic materials in the field of organic electronics. The progress of (hetero-) phospholes, unsaturated phosphanes, and trivalent and pentavalent phosphanes since 2010 is covered. The described applications of organophosphorus materials range from single molecule sensors, field effect transistors, organic light emitting diodes, to polymeric materials for organic photovoltaic applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Imaging the motion of electrons across semiconductor heterojunctions

    Science.gov (United States)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  10. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P

    2010-01-01

    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  11. Electronic states of semiconductor-metal-semiconductor quantum-well structures

    Science.gov (United States)

    Huberman, M. L.; Maserjian, J.

    1988-01-01

    Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. Ultrathin metal layers are predicted to behave as high-density dopant sheets.

  12. Electron-Beam Controlled Semiconductor Switches

    Science.gov (United States)

    1993-11-02

    1987) 153-156. Mazzola , M.S., et al., "Investigation of a Photoconductive Closing and Opening Bulk U GaAs Semiconductor Switch," Proceedings of the...Un-doped GaAs or chromium doped GaAs has decay times of nanoseconds and less. Current scale is 40 mA div-1, time scale is 1000 ns divŕ. (M. Mazzola ...Semiconductor Switch," J. Appl. Phys. 63 (1988) 2460-2463. [5] Mazzola , M., Schoenbach, K., Lakdawala, V., Germer, R., Loubriel, M., and Zutavern, F

  13. Tunneling of electrons through semiconductor superlattices

    Indian Academy of Sciences (India)

    Unknown

    The SSL we have considered is Ga0⋅7Al0⋅3As–GaAs which has been drawing considerable attention during the recent past on account of some typical features of its band structure. We have indicated how our results would help fabrication of ultra high speed devices. Keywords. Semiconductor superlattices; tunneling. 1.

  14. Imaging the motion of electrons in 2D semiconductor heterostructures

    Science.gov (United States)

    Dani, Keshav

    Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

  15. Electron spin and charge in semiconductor quantum dots

    NARCIS (Netherlands)

    Elzerman, J.M.

    2004-01-01

    In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vertical quantum dots are experimentally investigated. The lateral quantum dot devices are defined in a two-dimensional electron gas (2DEG) below the surface of a GaAs/AlGaAs heterostructure, by metallic

  16. Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

    2017-05-15

    The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

  17. Surface Bonding Effects in Compound Semiconductor Nanoparticles: II

    Energy Technology Data Exchange (ETDEWEB)

    Helen H. Farrell

    2008-07-01

    Small nanoparticles have a large proportion of their atoms either at or near the surface, and those in clusters are essentially all on the surface. As a consequence, the details of the surface structure are of paramount importance in governing the overall stability of the particle. Just as with bulk materials, factors that determine this stability include “bulk” structure, surface reconstruction, charge balance and hybridization, ionicity, strain, stoichiometry, and the presence of adsorbates. Needless to say, many of these factors, such as charge balance, hybridization and strain, are interdependent. These factors all contribute to the overall binding energy of clusters and small nanoparticles and play a role in determining the deviations from an inverse size dependence that we have previously reported for compound semiconductor materials. Using first-principles density functional theory calculations, we have explored how these factors influence particle stability under a variety of conditions.

  18. Problems of linear electron (polaron) transport theory in semiconductors

    CERN Document Server

    Klinger, M I

    1979-01-01

    Problems of Linear Electron (Polaron) Transport Theory in Semiconductors summarizes and discusses the development of areas in electron transport theory in semiconductors, with emphasis on the fundamental aspects of the theory and the essential physical nature of the transport processes. The book is organized into three parts. Part I focuses on some general topics in the theory of transport phenomena: the general dynamical theory of linear transport in dissipative systems (Kubo formulae) and the phenomenological theory. Part II deals with the theory of polaron transport in a crystalline semicon

  19. Electronics Industry Study Report: Semiconductors and Defense Electronics

    Science.gov (United States)

    2003-01-01

    Armamento y Material de Defensa y Seguridad ), Madrid, Spain ANIEL (Asociación Nacional de Industrias Electrónicas y de Telecomunicaciones), Madrid...quickly escalating with expected double- digit growth in 352003. o semiconductor consumers that increasingly tend to operate with razor-thin...thing.” Also, expanding use of Personal Digital Assistants and other hand- helds will generate a market for advanced chips. Ultimately, semiconductors

  20. Electron injection at dye-sensitized semiconductor electrodes.

    Science.gov (United States)

    Watson, David F; Meyer, Gerald J

    2005-01-01

    Electron injection at dye-sensitized semiconductors is reviewed. Particular emphasis is placed on theoretical and photoelectrochemical studies of dye-sensitized planar and single-crystal electrodes. The accepted mechanism of electron injection, which was derived from these classical studies, is introduced. Selected photoelectrochemical studies of dye-sensitized nanocrystalline semiconductors are reviewed; emphasis is given to factors that influence the efficiencies of electron injection and charge recombination. The development of quasi-solid-state nanocrystalline dye-sensitized solar cells is also discussed. Recent time-resolved spectroscopic studies of electron injection and charge recombination are reviewed. These studies have led to a better understanding of electron injection mechanisms, and have revealed the limitations of the classical models.

  1. Spin filtration of unpolarized electrons by impurity centers in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bobin, E. G.; Berdinskiy, V. L., E-mail: bvl@unpk.osu.ru [Orenburg State University (Russian Federation)

    2011-11-15

    It is shown that unpolarized paramagnetic centers can implement the spin filtration of unpolarized conduction electrons in semiconductors. This ability of paramagnetic centers is caused by the difference in the spin evolution of the states of electron-paramagnetic-center pairs and by the spin selectivity of electron capture exclusively from singlet pairs. The electron spin polarization should be opposite to the paramagneticcenter polarization. To implement spin filtration, an external magnetic field is necessary. The polarization can attain the largest values ({approx}10%) if the probability of spin-selective electron capture from singlet pairs exceeds the pair-decay rate by a factor of 5-7.

  2. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2017-06-06

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  3. Graphene-on-semiconductor substrates for analog electronics

    Science.gov (United States)

    Lagally, Max G.; Cavallo, Francesca; Rojas-Delgado, Richard

    2016-04-26

    Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

  4. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    Science.gov (United States)

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  5. Nonlinear charge transport in bipolar semiconductors due to electron heating

    Energy Technology Data Exchange (ETDEWEB)

    Molina-Valdovinos, S., E-mail: sergiom@fisica.uaz.edu.mx [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, CP 98060, Zacatecas, Zac, México (Mexico); Gurevich, Yu.G. [Centro de Investigación y de Estudios Avanzados del IPN, Departamento de Física, Av. IPN 2508, México D.F., CP 07360, México (Mexico)

    2016-05-27

    It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which is associated with the electron temperature dependence on the recombination rate. The heating of the charge carriers breaks the balance between generation and recombination, giving rise to nonequilibrium charge carriers concentration and nonlinearity. - Highlights: • A new mechanism of nonlinearity of current-voltage characteristic (CVC) is proposed. • The hot electron temperature violates the equilibrium between electrons and holes. • This violation gives rise to nonequilibrium concentration of electrons and holes. • This leads to nonlinear CVC (along with the heating nonlinearity).

  6. Ultrafast direct electron transfer at organic semiconductor and metal interfaces.

    Science.gov (United States)

    Xiang, Bo; Li, Yingmin; Pham, C Huy; Paesani, Francesco; Xiong, Wei

    2017-11-01

    The ability to control direct electron transfer can facilitate the development of new molecular electronics, light-harvesting materials, and photocatalysis. However, control of direct electron transfer has been rarely reported, and the molecular conformation-electron dynamics relationships remain unclear. We describe direct electron transfer at buried interfaces between an organic polymer semiconductor film and a gold substrate by observing the first dynamical electric field-induced vibrational sum frequency generation (VSFG). In transient electric field-induced VSFG measurements on this system, we observe dynamical responses (directly transferred from the Fermi level of gold to the lowest unoccupied molecular orbital of organic semiconductor. Transient spectra further reveal that, although the interfaces are prepared without deliberate alignment control, a subensemble of surface molecules can adopt conformations for direct electron transfer. Density functional theory calculations support the experimental results and ascribe the observed electron transfer to a flat-lying polymer configuration in which electronic orbitals are found to be delocalized across the interface. The present observation of direct electron transfer at complex interfaces and the insights gained into the relationship between molecular conformations and electron dynamics will have implications for implementing novel direct electron transfer in energy materials.

  7. n-Type organic semiconductors in organic electronics.

    Science.gov (United States)

    Anthony, John E; Facchetti, Antonio; Heeney, Martin; Marder, Seth R; Zhan, Xiaowei

    2010-09-08

    Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

  8. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut

    1990-01-01

    The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem

  9. Electronic and lattice dynamical properties of II-IV-N{sub 2} semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Punya, Atchara; Paudel, Tula R.; Lambrecht, Walter R.L. [Department of Physics, Case Western Reserve University, Cleveland, OH 444106-7079 (United States)

    2011-07-15

    The II-IV-N2 semiconductors constitute a family of heterovalent ternary semiconductors with properties closely related to those of the III-Nitrides. We here focus on Zn-IV-N2 semiconductors with the group IV-element Si, Ge and Sn. We present results on their electronic band structures obtained with the quasiparticle self-consistent GW method and the full-potential linearized muffin-tin orbital method. The latter is also used to calculate the energies of formation of these compounds from the constituent elements. The lattice dynamical properties were presented earlier in a series of papers and the main properties are briefly reviewed here. We emphasize the trends in the family of materials compared to those of the III-N and discuss the experimental data for the phonons. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  11. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  12. Determining binding energies of valence-band electrons in insulators and semiconductors via lanthanide spectroscopy

    Science.gov (United States)

    Dorenbos, Pieter

    2013-01-01

    Models and methods to determine the absolute binding energy of 4f-shell electrons in lanthanide dopants will be combined with data on the energy of electron transfer from the valence band to a lanthanide dopant. This work will show that it provides a powerful tool to determine the absolute binding energy of valence band electrons throughout the entire family of insulator and semiconductor compounds. The tool will be applied to 28 fluoride, oxide, and nitride compounds providing the work function and electron affinity together with the location of the energy levels of all divalent and all trivalent lanthanide dopants with an accuracy that surpasses that of traditional methods like photoelectron spectroscopy. The 28 compounds were selected to demonstrate how work function and electron affinity change with composition and structure, and how electronic structure affects the optical properties of the lanthanide dopants. Data covering more than 1000 different halide (F, Cl, Br, I), chalcogenide (O, S, Se), and nitride compounds are available in the archival literature enabling us to routinely establish work function and electron affinity for this much wider collection of compounds.

  13. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  14. Electron Liquids in Semiconductor Quantum Structures

    Energy Technology Data Exchange (ETDEWEB)

    Aron Pinczuk

    2009-05-25

    The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.

  15. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  16. Electronic functionalization of organic semiconductors with self-assembled monolayers

    Science.gov (United States)

    Podzorov, Vitaly

    2008-03-01

    Self-assembled monolayers (SAM) are widely used in a variety of emerging applications for surface modification of metals and oxides. Here, we demonstrate a new type of molecular self-assembly: the growth of organosilane SAMs at the surface of organic semiconductors. Remarkably, SAM growth results in a pronounced increase of surface conductivity of organic materials, which can be very large for SAMs with a strong electron withdrawing ability. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10̂-5 S per square, two orders of magnitude greater than the maximum conductivity typically achieved in organic field-effect transistors (OFETs). The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors with molecular self-assembly. In particular, SAM-induced conductivity exhibits sensitivity to different molecular species present in the environment, which makes this system very attractive for chemical sensing applications [1]. [1]. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, ``Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers'', Nature Materials, Nov. 18, (2007).

  17. Wide Bandgap Semiconductor Opportunities in Power Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sujit [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Marlino, Laura D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Kristina O. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2018-01-01

    The report objective is to explore the Wide Bandgap (WBG) Power Electronics (PE) market, applications, and potential energy savings in order to identify key areas where further resources and investments of the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (DOE EERE) would have the most impact on U.S. competiveness. After considering the current market, several potential near-term application areas were identified as having significant market and energy savings potential with respect to clean energy applications: (1) data centers (uninterruptible power supplies and server power supplies); (2) renewable energy generation (photovoltaic-solar and wind); (3) motor drives (industrial, commercial and residential); (4) rail traction; and, (5) hybrid and electric vehicles (traction and charging). After the initial explorative analyses, it became clear that, SiC, not GaN, would be the principal WBG power device material for the chosen markets in the near future. Therefore, while GaN is discussed when appropriate, this report focuses on SiC devices, other WBG applications (e.g., solid-state transformers, combined heat and power, medical, and wireless power), the GaN market, and GaN specific applications (e.g., LiDAR, 5G) will be explored at a later date. In addition to the market, supply and value chain analyses addressed in Section 1 of this report, a SWOT (Strength, Weakness, Opportunity, Threat) analysis and potential energy savings analysis was conducted for each application area to identify the major potential WBG application area(s) with a U.S. competitiveness opportunity in the future.

  18. Characterization of strained semiconductor structures using transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oezdoel, Vasfi Burak

    2011-08-15

    Today's state-of-the-art semiconductor electronic devices utilize the charge transport within very small volumes of the active device regions. The structural, chemical and optical material properties in these small dimensions can critically affect the performance of these devices. The present thesis is focused on the nanometer scale characterization of the strain state in semiconductor structures using transmission electron microscopy (TEM). Although high-resolution TEM has shown to provide the required accuracy at the nanometer scale, optimization of imaging conditions is necessary for accurate strain measurements. An alternative HRTEM method based on strain mapping on complex-valued exit face wave functions is developed to reduce the artifacts arising from objective lens aberrations. However, a much larger field of view is crucial for mapping strain in the active regions of complex structures like latest generation metal-oxide-semiconductor field-effect transistors (MOSFETs). To overcome this, a complementary approach based on electron holography is proposed. The technique relies on the reconstruction of the phase shifts in the diffracted electron beams from a focal series of dark-field images using recently developed exit-face wave function reconstruction algorithm. Combining high spatial resolution, better than 1 nm, with a field of view of about 1 {mu}m in each dimension, simultaneous strain measurements on the array of MOSFETs are possible. Owing to the much lower electron doses used in holography experiments when compared to conventional quantitative methods, the proposed approach allows to map compositional distribution in electron beam sensitive materials such as InGaN heterostructures without alteration of the original morphology and chemical composition. Moreover, dark-field holography experiments can be performed on thicker specimens than the ones required for high-resolution TEM, which in turn reduces the thin foil relaxation. (orig.)

  19. Electron dynamics in metals and semiconductors in strong THz fields

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd

    2017-01-01

    Semiconductors and metals respond to strong electric fields in a highly nonlinear fashion. Using single-cycle THz field transients it is possible to investigate this response in regimes not accessible by transport-based measurements. Extremely high fields can be applied without material damage......, intrinsic, undoped materials can be studied, and field-induced electron emission into free space can be investigated in detail, thereby offering new knowledge about material response to strong THz-frequency fields relevant for near-future generations of electronic circuitry....

  20. “Property Phase Diagrams” for Compound Semiconductors through Data Mining

    Directory of Open Access Journals (Sweden)

    Srikant Srinivasan

    2013-01-01

    Full Text Available This paper highlights the capability of materials informatics to recreate “property phase diagrams” from an elemental level using electronic and crystal structure properties. A judicious selection of existing data mining techniques, such as Principal Component Analysis, Partial Least Squares Regression, and Correlated Function Expansion, are linked synergistically to predict bandgap and lattice parameters for different stoichiometries of GaxIn1−xAsySb1−y, starting from fundamental elemental descriptors. In particular, five such elemental descriptors, extracted from within a database of highly correlated descriptors, are shown to collectively capture the widely studied “bowing” of energy bandgaps seen in compound semiconductors. This is the first such demonstration, to our knowledge, of establishing relationship between discrete elemental descriptors and bandgap bowing, whose underpinning lies in the fundamentals of solid solution thermodyanamics.

  1. “Property Phase Diagrams” for Compound Semiconductors through Data Mining

    Science.gov (United States)

    Srinivasan, Srikant; Rajan, Krishna

    2013-01-01

    This paper highlights the capability of materials informatics to recreate “property phase diagrams” from an elemental level using electronic and crystal structure properties. A judicious selection of existing data mining techniques, such as Principal Component Analysis, Partial Least Squares Regression, and Correlated Function Expansion, are linked synergistically to predict bandgap and lattice parameters for different stoichiometries of GaxIn1−xAsySb1−y, starting from fundamental elemental descriptors. In particular, five such elemental descriptors, extracted from within a database of highly correlated descriptors, are shown to collectively capture the widely studied “bowing” of energy bandgaps seen in compound semiconductors. This is the first such demonstration, to our knowledge, of establishing relationship between discrete elemental descriptors and bandgap bowing, whose underpinning lies in the fundamentals of solid solution thermodyanamics. PMID:28809308

  2. Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

    Science.gov (United States)

    Schnohr, C. S.

    2015-09-01

    Compound semiconductor alloys such as InxGa1-xAs, GaAsxP1-x, or CuInxGa1-xSe2 are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI2 chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

  3. Spin-filter and spin-gapless semiconductors: The case of Heusler compounds

    Energy Technology Data Exchange (ETDEWEB)

    Galanakis, I. [Department of Materials Science, School of Natural Sciences, University of Paras, GR-26504 Patra (Greece); Özdoğan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey); Şaşıoğlu, E. [Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany and Department of Physics, Fatih University, 34500, Büyükçekmece, Istanbul (Turkey)

    2016-05-15

    We review our recent first-principles results on the inverse Heusler compounds and the ordered quaternary (also known as LiMgPdSn-type) Heusler compounds. Among these two subfamilies of the full-Heusler compounds, several have been shown to be magnetic semiconductors. Such material can find versatile applications, e.g. as spin-filter materials in magnetic tunnel junctions. Finally, a special case are the spin-gapless semiconductors, where the energy gap at the Fermi level for the one spin-direction is almost vanishing, offering novel functionalities in spintronic/magnetoelectronic devices.

  4. Quantum information processing with electronic and nuclear spins in semiconductors

    Science.gov (United States)

    Klimov, Paul Victor

    Traditional electronic and communication devices operate by processing binary information encoded as bits. Such digital devices have led to the most advanced technologies that we encounter in our everyday lives and they influence virtually every aspect of our society. Nonetheless, there exists a much richer way to encode and process information. By encoding information in quantum mechanical states as qubits, phenomena such as coherence and entanglement can be harnessed to execute tasks that are intractable to digital devices. Under this paradigm, it should be possible to realize quantum computers, quantum communication networks and quantum sensors that outperform their classical counterparts. The electronic spin states of color-center defects in the semiconductor silicon carbide have recently emerged as promising qubit candidates. They have long-lived quantum coherence up to room temperature, they can be controlled with mature magnetic resonance techniques, and they have a built-in optical interface operating near the telecommunication bands. In this thesis I will present two of our contributions to this field. The first is the electric-field control of electron spin qubits. This development lays foundation for quantum electronics that operate via electrical gating, much like traditional electronics. The second is the universal control and entanglement of electron and nuclear spin qubits in an ensemble under ambient conditions. This development lays foundation for quantum devices that have a built-in redundancy and can operate in real-world conditions. Both developments represent important steps towards practical quantum devices in an electronic grade material.

  5. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  6. Orbital Contributions to the Electron g Factor in Semiconductor Nanowires

    Science.gov (United States)

    Winkler, Georg W.; Varjas, Dániel; Skolasinski, Rafal; Soluyanov, Alexey A.; Troyer, Matthias; Wimmer, Michael

    2017-07-01

    Recent experiments on Majorana fermions in semiconductor nanowires [S. M. Albrecht, A. P. Higginbotham, M. Madsen, F. Kuemmeth, T. S. Jespersen, J. Nygård, P. Krogstrup, and C. M. Marcus, Nature (London) 531, 206 (2016), 10.1038/nature17162] revealed a surprisingly large electronic Landé g factor, several times larger than the bulk value—contrary to the expectation that confinement reduces the g factor. Here we assess the role of orbital contributions to the electron g factor in nanowires and quantum dots. We show that an L .S coupling in higher subbands leads to an enhancement of the g factor of an order of magnitude or more for small effective mass semiconductors. We validate our theoretical finding with simulations of InAs and InSb, showing that the effect persists even if cylindrical symmetry is broken. A huge anisotropy of the enhanced g factors under magnetic field rotation allows for a straightforward experimental test of this theory.

  7. Electron-Phonon coupling in magnetized semiconductor quantum plasmas

    Science.gov (United States)

    Ghosh, S.; Muley, Apurva

    2017-05-01

    Present paper deals with electron-phonon coupling in piezoelectric n-type magnetized semiconductor plasma under quantum regime. A quantum modified dispersion relation is derived for the evolution of desired electron-phonon coupling in semiconductor plasma using quantum hydrodynamic (QHD) model. The main ingredients of this study are the role of non-dimensional quantum parameter-H and externally applied magneto-static field. The presence of quantum parameter-H includes the contributions of Fermi degenerate pressure and quantum diffraction. It represents the ratio of plasmon energy to Fermi energy of the system, hence is a function of doping concentration n0. An expression for gain coefficient of acoustic wave is obtained in terms of quantum parameter-H and magnetic field under the collision dominated limit. We present the effects of doping in medium and orientation of magnetic field on gain profile of acoustic wave. The results show that the presence of magnetic field and quantum effects through quantum parameter-H effectively modifies the gain per unit length of acoustic wave.

  8. Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization

    National Research Council Canada - National Science Library

    Mahalingam, Krishnamurthy

    2006-01-01

    .... Transmission electron microscope (TEM) characterization studies were performed on a variety of novel III-V semiconductor heterostructures being developed for advanced optoelectronic device applications...

  9. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  10. Ultrathin Compound Semiconductor on Insulator Layers for High-Performance Nanoscale Transistors

    Science.gov (United States)

    2010-11-11

    and n- type transistors on the same chip for complementary electronics based on the optimal III–V semiconductors. 1Electrical Engineering and...layouts for high-performance electronics on fabric, vinyl, leather , and paper. Adv. Mater. 21, 3703–3707 (2009). 17. Melosh, N. et al. Ultrahigh density

  11. Cancer incidence among semiconductor and electronic storage device workers.

    Science.gov (United States)

    Bender, T J; Beall, C; Cheng, H; Herrick, R F; Kahn, A R; Matthews, R; Sathiakumar, N; Schymura, M J; Stewart, J H; Delzell, E

    2007-01-01

    To evaluate cancer incidence among workers at two facilities in the USA that made semiconductors and electronic storage devices. 89 054 men and women employed by International Business Machines (IBM) were included in the study. We compared employees' incidence rates with general population rates and examined incidence patterns by facility, duration of employment, time since first employment, manufacturing era, potential for exposure to workplace environments other than offices and work activity. For employees at the semiconductor manufacturing facility, the standardised incidence ratio (SIR) for all cancers combined was 81 (1541 observed cases, 95% confidence interval (CI) 77 to 85) and for those at the storage device manufacturing facility the SIR was 87 (1319 observed cases, 95% CI 82 to 92). The subgroups of employees with > or =15 years since hiring and > or =5 years worked had 6-16% fewer total incidents than expected. SIRs were increased for several cancers in certain employee subgroups, but analyses of incidence patterns by potential exposure and by years spent and time since starting in specific work activities did not clearly indicate that the excesses were due to occupational exposure. This study did not provide strong or consistent evidence of causal associations with employment factors. Data on employees with long potential induction time and many years worked were limited. Further follow-up will allow a more informative analysis of cancer incidence that might be plausibly related to workplace exposures in the cohort.

  12. Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

    Directory of Open Access Journals (Sweden)

    Zhishuo Huang

    2016-08-01

    Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

  13. Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.

    Science.gov (United States)

    1985-04-01

    Semiconductors", L.F. Eastman, Third Inter. Conf. on Hot Carriers in Semiconductors, Montpellier , France (July 1981); J. de Physique, Col. C7, Sup. 010, Tome...ballistic electrons, the verage electron velocity is as high as 8 x 107cm/s across a short drift pace (< .5-.75 micron for ion density at or below

  14. Temperature dependence of the electronic structure of semiconductors and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Poncé, S., E-mail: samuel.pon@gmail.com; Gillet, Y.; Laflamme Janssen, J.; Gonze, X. [European Theoretical Spectroscopy Facility and Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Chemin des étoiles 8, bte L07.03.01, B-1348 Louvain-la-neuve (Belgium); Marini, A. [Consiglio Nazionale delle Ricerche (CNR), Via Salaria Km 29.3, CP 10, 00016 Monterotondo Stazione (Italy); Verstraete, M. [European Theoretical Spectroscopy Facility and Physique des matériaux et nanostructures, Université de Liège, Allée du 6 Août 17, B-4000 Liège (Belgium)

    2015-09-14

    The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

  15. Preparation and characterization of Bi2S3 compound semiconductor

    Indian Academy of Sciences (India)

    orthorhombic phase with calculated lattice constant a = 11.14 Å, b = 11.30 Å and c = 3.96 Å. Scanning electron microscopy (SEM) pictures indicate the presence of layer lines on the surface of crystals thereby proving that these crystals are grown by layer by layer mechanism. We studied the transport properties viz.

  16. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  17. High quality lamella preparation of gallium nitride compound semiconductor using Triple Beam™ system

    Science.gov (United States)

    Sato, T.; Nakano, K.; Matsumoto, H.; Torikawa, S.; Nakatani, I.; Kiyohara, M.; Isshiki, T.

    2017-09-01

    Gallium nitride (GaN) compound semiconductors have been known to be very sensitive to Ga focused ion beam (FIB) processing. Due to the nature of GaN based materials it is often difficult to produce damage-free lamellae, therefore applying the Triple Beam™ system which incorporates an enhanced method for amorphous removal is presented to make a high quality lamella. The damage or distortion layer thickness of GaN single crystal prepared with 30 kV Ga FIB and 1 kV Ga FIB were about 17 nm and 1.5 nm respectively. The crystallinity at the uppermost surface remained unaffected when the condition of 1 kV Ar ion milling with the Triple Beam™ system was used. The technique of combining traditional Ga FIB processing with an enhanced method for amorphous layer removal by low energy Ar ion milling allows us to analyse the InGaN/GaN interface using aberration corrected scanning transmission electron microscopy at atomic resolution levels.

  18. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    Science.gov (United States)

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  19. High Speed Compound Semiconductor Devices in Layered Structures.

    Science.gov (United States)

    1986-02-25

    a Superlattice," Appl. Phys. Lett., vol. 45, pp. 764-766 1984. P. Pearah, T. Henderson. 3. K1 an, W. T. Massel ink, N. Chand and fR. Norkop, ’ educed ... GaiAs /AlxGal_xAs NrDDFETs and its Comparison to GaAs/Al.Gal_.,As MOD- FEfs, EE Trans. on Electron Dev., pending. "Dressed Excitons in Multiple Quantm

  20. Carbonyl Compounds Generated from Electronic Cigarettes

    Directory of Open Access Journals (Sweden)

    Kanae Bekki

    2014-10-01

    Full Text Available Electronic cigarettes (e-cigarettes are advertised as being safer than tobacco cigarettes products as the chemical compounds inhaled from e-cigarettes are believed to be fewer and less toxic than those from tobacco cigarettes. Therefore, continuous careful monitoring and risk management of e-cigarettes should be implemented, with the aim of protecting and promoting public health worldwide. Moreover, basic scientific data are required for the regulation of e-cigarette. To date, there have been reports of many hazardous chemical compounds generated from e-cigarettes, particularly carbonyl compounds such as formaldehyde, acetaldehyde, acrolein, and glyoxal, which are often found in e-cigarette aerosols. These carbonyl compounds are incidentally generated by the oxidation of e-liquid (liquid in e-cigarette; glycerol and glycols when the liquid comes in contact with the heated nichrome wire. The compositions and concentrations of these compounds vary depending on the type of e-liquid and the battery voltage. In some cases, extremely high concentrations of these carbonyl compounds are generated, and may contribute to various health effects. Suppliers, risk management organizations, and users of e-cigarettes should be aware of this phenomenon.

  1. Carbonyl compounds generated from electronic cigarettes.

    Science.gov (United States)

    Bekki, Kanae; Uchiyama, Shigehisa; Ohta, Kazushi; Inaba, Yohei; Nakagome, Hideki; Kunugita, Naoki

    2014-10-28

    Electronic cigarettes (e-cigarettes) are advertised as being safer than tobacco cigarettes products as the chemical compounds inhaled from e-cigarettes are believed to be fewer and less toxic than those from tobacco cigarettes. Therefore, continuous careful monitoring and risk management of e-cigarettes should be implemented, with the aim of protecting and promoting public health worldwide. Moreover, basic scientific data are required for the regulation of e-cigarette. To date, there have been reports of many hazardous chemical compounds generated from e-cigarettes, particularly carbonyl compounds such as formaldehyde, acetaldehyde, acrolein, and glyoxal, which are often found in e-cigarette aerosols. These carbonyl compounds are incidentally generated by the oxidation of e-liquid (liquid in e-cigarette; glycerol and glycols) when the liquid comes in contact with the heated nichrome wire. The compositions and concentrations of these compounds vary depending on the type of e-liquid and the battery voltage. In some cases, extremely high concentrations of these carbonyl compounds are generated, and may contribute to various health effects. Suppliers, risk management organizations, and users of e-cigarettes should be aware of this phenomenon.

  2. Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Ras, Daniel; Schmidt, Sebastian S.; Caballero, Raquel; Unold, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Schock, Hans-Werner [Department of Engineering, George Holt Building, Liverpool (United Kingdom); Koch, Christoph T. [Max-Planck Institute for Intelligent Systems, Stuttgart (Germany); Schaffer, Bernhard [SuperSTEM, STFC Daresbury Laboratories, Keckwick Lane, Warrington (United Kingdom); SUPA School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Schaffer, Miroslava [SuperSTEM, STFC Daresbury Laboratories, Keckwick Lane, Warrington (United Kingdom); Department of Engineering, George Holt Building, Liverpool (United Kingdom); Choi, Pyuck-Pa; Cojocaru-Miredin, Oana [Max-Planck-Institut fuer Eisenforschung GmbH, Department of Microstructure Physics and Alloy Design, Duesseldorf (Germany)

    2012-08-15

    Grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se{sub 2} thin films exhibit only slightly enhanced recombination, as compared with the grain interiors, allowing for very high power-conversion efficiencies of more than 20% in the corresponding solar-cell devices. This work highlights the specific compositional and electrical properties of Cu(In,Ga)Se{sub 2} GBs by application of appropriate subnanometer characterisation techniques: inline electron holography, electron energy-loss spectroscopy, and atom-probe tomography. It is found that changes of composition at the GBs are confined to regions of only about 1 nm in width. Therefore, these compositional changes are not due to secondary phases but atomic or ionic redistribution within the atomic planes close to the GBs. For different GBs in the Cu(In,Ga)Se{sub 2} thin film investigated, different atomic or ionic redistributions are also found. This chemical flexibility makes polycrystalline Cu(In,Ga)Se{sub 2} thin films particularly suitable for photovoltaic applications. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  4. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  5. An exploration of deep level defects in compound semiconductors using optoelectronic modulation spectroscopy

    CERN Document Server

    Chiu, C H

    2001-01-01

    The work is concerned with the detection and characterisation of defect states within semiconductor materials. OptoElectronic Modulation Spectroscopy (OEMS) has been adapted to isolate the electrical and optical responses of traps in semiconductor device and materials. Sub band-gap photons are used to permit penetration into the semiconductor to excite charges in deep defect states. In order to isolate the effect of back-plane charge traps in MESFET structures gate depletion region modulation of the channel current has been eliminated by using a closed loop control system to stabilise the gate depletion capacitance continuously throughout the measurement of the OEMS spectrum. Any change of the channel current will then be due only to the charges within the back-plane interface depletion region between the active layer and buffer/substrate. Depth defined OEMS has also been demonstrated and used to detect defects situated between two preset gate depletion regions. The location of the defect states is therefore ...

  6. Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit

    Energy Technology Data Exchange (ETDEWEB)

    Saini, Hardev S.; Singh, Mukhtiyar [Department of Physics, Kurukshetra University, Kurukshetra, 136119 Haryana (India); Reshak, Ali H. [School of Complex Systems, FFWP - South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, University Malaysia Perlis, P.O. Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Kashyap, Manish K., E-mail: manishdft@gmail.com [Department of Physics, Kurukshetra University, Kurukshetra, 136119 Haryana (India)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer This compound is true half metallic ferromagnet for all studied Cr concentrations. Black-Right-Pointing-Pointer The half metallicity is preserved up to lowest doping concentration, x = 0.03. Black-Right-Pointing-Pointer The HM gap increases with reduction in doping concentration from 0.25 to 0.03. Black-Right-Pointing-Pointer p-d hybridization induces ferromagnetism and half metallicity in the compound. Black-Right-Pointing-Pointer Double exchange mechanism is responsible for the stabilization of ferromagnetism. - Abstract: The electronic and magnetic properties of Ga{sub 1-x}Cr{sub x}P dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method in order to seek out the possibility of new dilute magnetic semiconductor (DMS) compound within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the Cr doping in GaP induces the ferromagnetism and originates a half metallic (HM) gap at Fermi level (E{sub F}) in minority spin channel (MIC) for all concentrations. The half metallicity is originated by the hybridization of Cr-d states with P-p states. Moreover, the half metallicity remains intact for all Cr-concentration. We also observed that the HM gap increases with the reduction in doping concentration from 0.25 to 0.03. The total magnetic moment of this compound is mainly due to Cr-d states present at E{sub F}. A small induced magnetic moment on other non magnetic atoms (Ga and P) for all doping concentrations is a consequence of p-d hybridization between Cr-d and P-p states.

  7. Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

    KAUST Repository

    Ng, Tien Khee

    2018-02-01

    Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

  8. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    Science.gov (United States)

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  9. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on I......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks.......The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......Sb, InAs, and GaAs surfaces based on surface x-ray diffraction data that was analyzed by direct methods and subsequent least squares refinement. Contrary to common belief the main building blocks of the structure are not dimers on the surface but subsurface dimers in the second bilayer. This essential...

  10. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  11. 75 FR 9438 - Samsung Austin Semiconductor, LLC, DRAM Fab 1, a Subsidiary of Samsung Electronics Corporation...

    Science.gov (United States)

    2010-03-02

    ... Electronics Corporation, Including On-Site Leased Workers From Manpower and Amtech Systems, Inc., Austin, TX..., applicable to workers of Samsung Austin Semiconductor, LLC, a subsidiary of Samsung Electronics Corporation... of DRAM chips for use in electronics. The company reports that on-site leased workers from Amtech...

  12. Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications

    Science.gov (United States)

    1992-06-22

    Dailesasse. P. GavnloViC,al N. Holonyak. Jr.. R. W. Kaliski,bl D. W. Nam.", and E. J. Vesel Electrical Engineering Research Laborator . Center jbr...a the graded barrier depresed index cladding3 (DC) laser, GaAs top contact layer. The laser material was procese in which the perpendicular

  13. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  14. Elemental and compound semiconductor surface chemistry: Intelligent interfacial design facilitated through novel functionalization and deposition strategies

    Science.gov (United States)

    Porter, Lon Alan, Jr.

    The fundamental understanding of silicon surface chemistry is an essential tool for silicon's continued dominance of the semiconductor industry in the years to come. By tapping into the vast library of organic functionalities, the synthesis of organic monolayers may be utilized to prepare interfaces, tailored to a myriad of applications ranging from silicon VLSI device optimization and MEMS to physiological implants and chemical sensors. Efforts in our lab to form stable organic monolayers on porous silicon through direct silicon-carbon linkages have resulted in several efficient functionalization methods. In the first chapter of this thesis a comprehensive review of these methods, and many others is presented. The following chapter and the appendix serve to demonstrate both potential applications and studies aimed at developing a fundamental understanding of the chemistry behind the organic functionalization of silicon surfaces. The remainder of this thesis attempts to demonstrate new methods of metal deposition onto both elemental and compound semiconductor surfaces. Currently, there is considerable interest in producing patterned metallic structures with reduced dimensions for use in technologies such as ULSI device fabrication, MEMS, and arrayed nanosensors, without sacrificing throughput or cost effectiveness. Research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Continuous metallic films form spontaneously under ambient conditions, in the absence of a fluoride source or an externally applied current. In order to apply this metallization method toward the development of useful technologies, patterning utilizing photolithography, microcontact printing, and scanning probe nanolithography has been demonstrated.

  15. Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

    Directory of Open Access Journals (Sweden)

    Marcelino Becerril

    2013-04-01

    Full Text Available In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO3, and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

  16. The Effect of the Electron Tunneling on the Photoelectric Hot Electrons Generation in Metallic-Semiconductor Nanostructures

    Science.gov (United States)

    Elsharif, Asma M.

    2018-01-01

    Semiconductor photonic crystals (MSPhC) were used to convert solar energy into hot electrons. An experimental model was designed by using metallic semiconductor photonic crystals (MSPhC). The designed MSPhC is based on TiO2/Au schottky contact. The model has similar nanocavity structure for broad gold absorption, but the materials on top of the cavity were changed to a metal and a semiconductor in order to collect the hot electrons. Detailed design steps and characterization have shown a broadband sub-bandgap photoresponse at a wavelength of 590 nm. This is due to the surface plasmon absorption by the wafer-scale Au/TiO2 metallic-semiconductor photonic crystal. Analytical calculation of the hot electron transport from the Au thin layer to the TiO2 conduction band is discussed. This theoretical study is based on the quantum tunneling effect. The photo generation of the hot electrons was undertaken at different wavelengths in Au absorber followed by tunneling through a schottky barrier into a TiO2 collector. The presence of a tunnel current from the absorber to the collector under illumination, offers a method to extract carriers from a hot-electron distribution at few bias voltages is presented in this study. The effects of doping different concentrations of the semiconductor on the evolution of the current characteristics were also investigated and discussed. The electrical characteristics were found to be sensitive to any change in the thickness of the barrier.

  17. III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

    Science.gov (United States)

    Choi, Donghun

    Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre

  18. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  19. Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Mika, Filip; Hovorka, Miloš; Valdaitsev, D.; Schönhense, G.; Müllerová, Ilona

    2007-01-01

    Roč. 48, č. 5 (2007), s. 936-939 ISSN 1345-9678 R&D Projects: GA ČR GA202/04/0281 Institutional research plan: CEZ:AV0Z20650511 Keywords : electron microscopic contrasts * semiconductors * dopant contrast * scanning electron microscopy * scanning low energy electron microscopy * photoelectron emission microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.018, year: 2007

  20. Electronic spin precession in semiconductor quantum dots with spin-orbit coupling

    Science.gov (United States)

    Valín-Rodríguez, Manuel; Puente, Antonio; Serra, Llorenç; Lipparini, Enrico

    2002-12-01

    The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.

  1. Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

    NARCIS (Netherlands)

    Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-01-01

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

  2. Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes

    DEFF Research Database (Denmark)

    Sevincli, Haldun; Lehmann, T.; Ryndyk, D. A.

    2013-01-01

    Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conduc...

  3. Towards quantum optics and entanglement with electron spin ensembles in semiconductors

    NARCIS (Netherlands)

    van der Wal, Caspar H.; Sladkov, Maksym

    We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside

  4. The WSPC Reference on Organic Electronics: Organic Semiconductors

    KAUST Repository

    Bredas, Jean-Luc

    2015-05-12

    In this chapter, we provide a basic theoretical perspective on charge-carrier transport in organic semiconductors, with a focus on organic molecular crystals. We introduce the microscopic parameters relevant to the intrinsic charge-transport properties of these materials and describe some of the common quantum-chemical approaches used for their evaluation. We also discuss the nature of the possible charge-transport mechanisms in organic molecular crystals.

  5. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    Science.gov (United States)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  6. Electronic transport at semiconductor surfaces - from point-contact transistor to micro-four-point probes

    DEFF Research Database (Denmark)

    Hasegawa, S.; Grey, Francois

    2002-01-01

    The electrical properties of semiconductor surfaces have played a decisive role in one of the most important discoveries of the last century, transistors. In the 1940s, the concept of surface states-new electron energy levels characteristic of the surface atoms-was instrumental in the fabrication...... of the first point-contact transistors, and led to the successful fabrication of field-effect transistors. However, to this day, one property of semiconductor surface states remains poorly understood, both theoretically and experimentally. That is the conduction of electrons or holes directly through...

  7. MBE-grown semiconductor nanostructures with electronic and photonic confinement

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis

    In this thesis the realization of semiconductor nanostructures in the InAlGaAs material system with molecular beam epitaxy (MBE) is described, as well as the characterization of their optical properties. First, the growth conditions used for different materials and surfaces are given, and the gen......In this thesis the realization of semiconductor nanostructures in the InAlGaAs material system with molecular beam epitaxy (MBE) is described, as well as the characterization of their optical properties. First, the growth conditions used for different materials and surfaces are given......, and the general capabilities of the MBE-systems are demonstrated, with respect to growth of structures with varying thicknesses/alloy compositions, and the synthesis of alloys, so-called digital alloying. In the first main part of the thesis a group of low-dimensional structures are described, the so......As, InGaAs and InAlGaAs is decribed, and it is shown how structures with very uniform quantum dots at energies near the visible red part of the spectrum may be realized. The second main part of the thesis deals with the growth of optical microcavities, where the light is strongly interacting...

  8. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

    2014-01-05

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

  9. Semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Tuchkevich, V.M.; Frenkel, V.Y.

    1986-01-01

    This text is a collection of papers devoted mainly to the results of the research work in the field of semiconductors. Topics include photovoltaic solar energy conversion, interacting excitons in germanium and silicon, chalcogenide vitreous semiconductors, optical cooling of the nuclear spin system in a semiconductor, photon drag of electrons in semiconductors, dielectric losses in crystals, light scattering from heavily doped semiconductors, and the capacity of an abrupt asymmetric p-n junction.

  10. NMR Probe for Electrons in Semiconductor Mesoscopic Structures

    Indian Academy of Sciences (India)

    2009-11-14

    Nov 14, 2009 ... Strongly correlated electron systems: Overview. Problem: How to detect the electronic state in nanoscale structures. Two examples where the usual methods don't work. Solution: We showed NMR techniques can be very useful in such circumstances. Outline ...

  11. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

    Directory of Open Access Journals (Sweden)

    Valeri V. Afanas'ev

    2014-01-01

    Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

  12. Semiconductor laser utilizing transitions between size-quantization levels with separate electron and optical confinement

    Energy Technology Data Exchange (ETDEWEB)

    Aleksanyan, A.G.; Aleksanyan, A.G.; Mirzabekyan, G.E.; Popov, Y.M.

    1984-09-01

    An analytic expression is obtained for the threshold of a semiconductor laser in the form of a five-layer structure with separate electron and optical confinement. An analysis is made of the dependence of the lasing threshold on the thickness of the active and waveguide layers, and also on the permittivities of these layers.

  13. The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Angela Yu-Chen [National Taiwan University, Graduate Institute of Environmental Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China)], E-mail: yuchenlin@ntu.edu.tw; Panchangam, Sri Chandana; Lo, Chao-Chun [National Taiwan University, Graduate Institute of Environmental Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China)

    2009-04-15

    This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 {mu}g/L). - The semiconductor, electronics and optoelectronic industries are the primary source of PFC contamination in downstream aqueous environments.

  14. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  15. Atomic and Electronic Structure of Defects in Semiconductors.

    Science.gov (United States)

    1983-08-01

    Ultramicroscopy, (1981) Vol 7, p. 59-64. 3. "Electron Energy Loss Spectroscopy as a probe of the Local Atomic Environment" O.L. Krivanek , M.M. Disko, J...Electron Energy-Loss Spectra, M.M. Disko, O.L. Krivanek and P. Rez, Phys. Rev. B15, #6, p. 4252 (1982). 8. "Electronic Structure of the Unreconstructed 30...and Preliminary Orientation Depencence Results" M. Disko, 0. Krivanek and J.C.H. Spence, Proc. EMSA, 1981. G.W. Bailey, Ed, Claitors Publishing Division

  16. Theory of Electron Transport in Semiconductors A Pathway from Elementary Physics to Nonequilibrium Green Functions

    CERN Document Server

    Jacoboni, Carlo

    2010-01-01

    This book describes in details the theory of the electron transport in the materials and structures at the basis of modern micro- and nano-electronics. It leads and accompanies the reader, through a step-by-step derivation of all calculations, from the basic laws of classical and quantum physics up to the most modern theoretical techniques, such as nonequilibrium Green functions, to study transport properties of both semiconductor materials and modern low-dimensional and mesoscopic structures.

  17. Nanoscale Studies of Energy Band Gaps and Band Offsets in Compound Semiconductor Heterostructures

    Science.gov (United States)

    Chang, Alexander S.

    The identification of the precise band offsets at semiconductor interfaces is crucially important for the successful development of electronic and optoelectronic devices. However, issues at the interfaces, such as strain or defects, needs to be investigated for precise band tuning of semiconductor heterostructures. In this dissertation, the nanometer-scale structural and electronic properties of InGaAs(Sb)N/GaAs interfaces, InGaN/GaN QDs, and GaSb/GaAs QDs are investigated using a combination of XSTM and STS. The influence of Sb incorporation on the InGaAs(Sb)N/GaAs band alignment is investigated. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed, due to strain-induced splitting of the valence band and the incorporation of Sb. Band tuning of both conduction and valence band edges with the incorporation of Sb can be used to engineer the band structure with strong confinement of electrons and holes in the InGaAsSbN quantum well layer, which is promising for light emitting applications. The influence of the growth substrate on InGaN/GaN QD formation and properties is examined. The QD density, dimension, and band gaps are compared for different InGaN QDs on free-standing GaN or GaN/AlN/sapphire substrates. We present different sources using nucleation on different substrates, and discuss their influences on the electronic band structure. Our work suggests that a wide variety of InGaN QD dimension, density, and band structure can be achieved by using different starting substrate and number of layers of InGaN QD stacks. Furthermore, the influence of strain and dislocation on the GaSb/GaAs QD band alignment is investigated using both experimental and computational tools. A combination of cross-sectional transmission electron microscopy (XTEM), XSTM, and STS reveals the formation of misfit dislocations and both coherent and semi-coherent clustered QDs, independent of Sb- vs. As-termination of the GaAs surface. Furthermore, finite

  18. Electronic properties of semiconductor interfaces. Final technical report, December 1981-February 1983

    Energy Technology Data Exchange (ETDEWEB)

    Flores, F.; Tejedor, C.; Guinea, F.; Sanchez-Dehesa, J.

    1983-02-01

    The objective was to analyze the electronic properties of different semiconductor interfaces. The Wannier function formalism has been applied to the GaAs-AlAs (111) and (100) heterojunctions and superlattices. Ionic relaxations, band discontinuities and interface states have been obtained. Abrupt Si-metal interfaces and Si-interlayer-metal junctions have been analyzed by means of a self-consistent tight-binding approach. The barrier height has been obtained by calculating the interface density of states and the neutral level of the junction. Our results show that the barrier height is mainly determined by the coupling between the semiconductor and the last layer just sitting on top of the same semiconductor.

  19. Resonance fluorescence and electron spin in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yong

    2009-11-18

    The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

  20. Molecular fingerprints in the electronic properties of crystalline organic semiconductors

    DEFF Research Database (Denmark)

    Ciuchi, S.; Hatch, R.C.; Höchst, H.

    2012-01-01

    By comparing photoemission spectroscopy with a non-perturbative dynamical mean field theory extension to many-body ab initio calculations, we show in the prominent case of pentacene crystals that an excellent agreement with experiment for the bandwidth, dispersion and lifetime of the hole carrier...... of electronic interactions cannot reproduce the experimental photoemission data in this important class of materials....

  1. Mechanical Properties of Organic Semiconductors for Stretchable, Highly Flexible, and Mechanically Robust Electronics.

    Science.gov (United States)

    Root, Samuel E; Savagatrup, Suchol; Printz, Adam D; Rodriquez, Daniel; Lipomi, Darren J

    2017-05-10

    Mechanical deformability underpins many of the advantages of organic semiconductors. The mechanical properties of these materials are, however, diverse, and the molecular characteristics that permit charge transport can render the materials stiff and brittle. This review is a comprehensive description of the molecular and morphological parameters that govern the mechanical properties of organic semiconductors. Particular attention is paid to ways in which mechanical deformability and electronic performance can coexist. The review begins with a discussion of flexible and stretchable devices of all types, and in particular the unique characteristics of organic semiconductors. It then discusses the mechanical properties most relevant to deformable devices. In particular, it describes how low modulus, good adhesion, and absolute extensibility prior to fracture enable robust performance, along with mechanical "imperceptibility" if worn on the skin. A description of techniques of metrology precedes a discussion of the mechanical properties of three classes of organic semiconductors: π-conjugated polymers, small molecules, and composites. The discussion of each class of materials focuses on molecular structure and how this structure (and postdeposition processing) influences the solid-state packing structure and thus the mechanical properties. The review concludes with applications of organic semiconductor devices in which every component is intrinsically stretchable or highly flexible.

  2. Opto-electronic and quantum transport properties of semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sabathil, M.

    2005-01-01

    In this work a novel and efficient method for the calculation of the ballistic transport properties of open semiconductor nanostructures connected to external reservoirs is presented. It is based on the Green's function formalism and reduces the effort to obtain the transmission and the carrier density to a single solution of a hermitian eigenvalue problem with dimensions proportional to the size of the decoupled device and the multiple inversion of a small matrix with dimensions proportional to the size of the contacts to the leads. Using this method, the 4-band GaAs hole transport through a 2-dimensional three-terminal T-junction device, and the resonant tunneling current through a 3-dimensional InAs quantum dot molecule embedded into an InP heterostructure have been calculated. The further extension of the method into a charge self-consistent scheme enables the efficient prediction of the IV-characteristics of highly doped nanoscale field effect transistors in the ballistic regime, including the influence of quasi bound states and the exchange-correlation interaction. Buettiker probes are used to emulate the effect of inelastic scattering on the current for simple 1D devices, systematically analyzing the dependence of the density of states and the resulting self-consistent potential on the scattering strength. The second major topic of this work is the modeling of the optical response of quantum confined neutral and charged excitons in single and coupled self-assembled InGaAs quantum dots. For this purpose the existing device simulator nextnano{sup 3} has been extended to incorporate particle-particle interactions within the means of density functional theory in local density approximation. In this way the exciton transition energies for neutral and charged excitons as a function of an externally applied electric field have been calculated, revealing a systematic reduction of the intrinsic dipole with the addition of extra holes to the exciton, a finding

  3. Electronic Biosensors Based on III-Nitride Semiconductors.

    Science.gov (United States)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  4. Electronic transport properties of carbon nanotube metal-semiconductor-metal

    Directory of Open Access Journals (Sweden)

    F Khoeini

    2008-07-01

    Full Text Available  In this work, we study electronic transport properties of a quasi-one dimensional pure semi-conducting Zigzag Carbon Nanotube (CNT attached to semi-infinite clean metallic Zigzag CNT leads, taking into account the influence of topological defect in junctions. This structure may behave like a field effect transistor. The calculations are based on the tight-binding model and Green’s function method, in which the local density of states(LDOS in the metallic section to semi-conducting section, and muli-channel conductance of the system are calculated in the coherent and linear response regime, numerically. Also we have introduced a circuit model for the system and investigated its current. The theoretical results obtained, can be a base, for developments in designing nano-electronic devices.

  5. Electronic Biosensors Based on III-Nitride Semiconductors

    Science.gov (United States)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-07-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  6. Electron microscopy imaging of proteins on gallium phosphide semiconductor nanowires

    Science.gov (United States)

    Hjort, Martin; Bauer, Mikael; Gunnarsson, Stefan; Mårsell, Erik; Zakharov, Alexei A.; Karlsson, Gunnel; Sanfins, Elodie; Prinz, Christelle N.; Wallenberg, Reine; Cedervall, Tommy; Mikkelsen, Anders

    2016-02-01

    We have imaged GaP nanowires (NWs) incubated with human laminin, serum albumin (HSA), and blood plasma using both cryo-transmission electron microscopy and synchrotron based X-ray photoemission electron microscopy. This extensive imaging methodology simultaneously reveals structural, chemical and morphological details of individual nanowires and the adsorbed proteins. We found that the proteins bind to NWs, forming coronas with thicknesses close to the proteins' hydrodynamic diameters. We could directly image how laminin is extending from the NWs, maximizing the number of proteins bound to the NWs. NWs incubated with both laminin and HSA show protein coronas with a similar appearance to NWs incubated with laminin alone, indicating that the presence of HSA does not affect the laminin conformation on the NWs. In blood plasma, an intermediate sized corona around the NWs indicates a corona with a mixture of plasma proteins. The ability to directly visualize proteins on nanostructures in situ holds great promise for assessing the conformation and thickness of the protein corona, which is key to understanding and predicting the properties of engineered nanomaterials in a biological environment.We have imaged GaP nanowires (NWs) incubated with human laminin, serum albumin (HSA), and blood plasma using both cryo-transmission electron microscopy and synchrotron based X-ray photoemission electron microscopy. This extensive imaging methodology simultaneously reveals structural, chemical and morphological details of individual nanowires and the adsorbed proteins. We found that the proteins bind to NWs, forming coronas with thicknesses close to the proteins' hydrodynamic diameters. We could directly image how laminin is extending from the NWs, maximizing the number of proteins bound to the NWs. NWs incubated with both laminin and HSA show protein coronas with a similar appearance to NWs incubated with laminin alone, indicating that the presence of HSA does not affect the

  7. Smooth growth of organic semiconductor films on graphene for high-efficiency electronics.

    Science.gov (United States)

    Hlawacek, Gregor; Khokhar, Fawad S; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-02-09

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron microscopy and micro low energy electron diffraction reveal the morphological and structural evolution of the thin film. The layer-by-layer growth of 6P on graphene proceeds by subsequent adding of {111} layers.

  8. Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

    Science.gov (United States)

    2012-01-05

    vapor deposition ( CVD ) using gold thin films as catalyst on a Si wafer with an insulating SiO2 layer. The structural characterization of the as-grown...advantages in improved carrier confinement over their thin film counterparts. The bandgap of the ZnO may be increased by addition of Mg. Results: We...variety of wide bandgap nanowires using GaN and ZnO and made functional devices from them for sensing,electronics and photonics.These included a very

  9. Optical, magnetic, and electronic control of free carrier spin in semiconductors

    Science.gov (United States)

    Johnston-Halperin, Ezekiel

    Semiconductor physics has traditionally been dominated by consideration of electronic charge. However, recent discoveries concerning the manipulation and detection of the spin degree of freedom have led to rapid advances in the fields of magneto-electronics/spintronics, quantum information, and quantum computation. Here I present a series of experiments that utilize both coherent optical techniques and sophisticated materials synthesis to examine and control electron spin in semiconducting materials. First, we use femtosecond-resolved pump-probe spectroscopy to optically generate and detect non-equilibrium electron spin populations in GaN. We observe robust spin dynamics with nanosecond lifetimes and which persist to room temperature despite a defect density eight orders of magnitude higher than is found in typical semiconductors. Additionally systematic low-temperature measurements as a function of electronic doping and magnetic field reveal an anomalous spin scattering mechanism, distinct from traditional mechanisms found in semiconductors (D'yakonv-Perel, Bir-Aronov-Pikus, Elliot-Yafet) and consistent with similar studies in GaAs. In a parallel effort with the aim of exerting magnetic control over electronic spin, we exploit advanced molecular beam eptixay (MBE) growth techniques to atomically engineer the distribution of magnetic impurities within a GaAs matrix. These materials exhibit tunable ferromagnetism while allowing us to simultaneously and independently control the electronic and band structure of the host semiconductor lattice. This allows for the synthesis of ferromagnetic materials which are ˜3--5 monolayers thick and maintain their magnetic order in the presence of both p- and n-type doping. Finally, we further exploit the flexibility of semiconductor materials in the design and fabrication of a spin-polarized Zener tunneling diode. This device overcomes the limitation that (Ga,Mn)As is inherently p-type by generating a spin-polarized electron

  10. Application of quaternary phase diagrams to compound semiconductor processing. Progress report, April 1, 1988--December 31, 1988

    Energy Technology Data Exchange (ETDEWEB)

    Schwartzman, A.

    1988-12-31

    This paper considers the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Examples, listed in a table, include semiconductor/insulator/semiconductor (SIS) layered structures, II-VI/II-VI and III-V/II-VI epitaxial heterojunctions and oxidation of ternary compounds. Solid solubility is taken into account for quaternary phase diagrams of semiconductor systems. Using free energies of formation, a method to calculate the quaternary phase diagrams was developed. The Ga-As-II-VI and Cd-Te-Zn-O phase diagrams are reviewed as examples of quaternary phase diagrams without and with solid solubility.

  11. Electronic transport in narrow-gap semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bloemers, Christian

    2012-10-19

    Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

  12. Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers

    Science.gov (United States)

    Calhoun, M. F.; Sanchez, J.; Olaya, D.; Gershenson, M. E.; Podzorov, V.

    2008-01-01

    Self-assembled monolayers (SAMs) are widely used in a variety of emerging applications for surface modification of metals and oxides. Here, we demonstrate a new type of molecular self-assembly: the growth of organosilane SAMs at the surface of organic semiconductors. Remarkably, SAM growth results in a pronounced increase of the surface conductivity of organic materials, which can be very large for SAMs with a strong electron-withdrawing ability. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10-5S per square, two orders of magnitude greater than the maximum conductivity typically achieved in organic field-effect transistors. The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors with molecular self-assembly. In particular, SAM-induced conductivity shows sensitivity to different molecular species present in the environment, which makes this system very attractive for chemical sensing applications.

  13. Heterogeneous semiconductor photocatalysts for hydrogen production from aqueous solutions of electron donors

    Science.gov (United States)

    Kozlova, E. A.; Parmon, V. N.

    2017-09-01

    Current views on heterogeneous photocatalysts for visible- and near-UV-light-driven production of molecular hydrogen from water and aqueous solutions of inorganic and organic electron donors are analyzed and summarized. Main types of such photocatalysts and methods for their preparation are considered. Particular attention is paid to semiconductor photocatalysts based on sulfides that are known to be sensitive to visible light. The known methods for increasing the quantum efficiency of the target process are discussed, including design of the structure, composition and texture of semiconductor photocatalysts and variation of the medium pH and the substrate and photocatalyst concentrations. Some important aspects of the activation and deactivation of sulfide photocatalysts and the evolution of their properties in the course of hydrogen production processes in the presence of various types of electron donors are analyzed. The bibliography includes 276 references.

  14. Correlated electron-hole mechanism for molecular doping in organic semiconductors

    Science.gov (United States)

    Li, Jing; D'Avino, Gabriele; Pershin, Anton; Jacquemin, Denis; Duchemin, Ivan; Beljonne, David; Blase, Xavier

    2017-07-01

    The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body ab initio methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ionization. Our findings reconcile available experimental data, shedding light on the partial vs. full charge transfer scenario discussed in the literature, and question the relevance of the standard classification in shallow or deep impurity levels prevailing for inorganic semiconductors.

  15. Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

    Science.gov (United States)

    Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

    2017-06-01

    The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

  16. Compound semiconductor field-effect transistors with improved dc and high frequency performance

    Energy Technology Data Exchange (ETDEWEB)

    Zolper, J.C.; Sherwin, M.E.; Baca, A.G.

    1995-12-31

    A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is deposited. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region the Si-channel tail, but does not contribute substantially to the acceptor concentration in the region of the buried p-implant. As a result, the invention provides for improved field effect transistor devices with enhancement of both DC and high-frequency performance.

  17. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    Science.gov (United States)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  18. Ordered-vacancy-compound semiconductors: Pseudocubic CdIn2Se4

    Science.gov (United States)

    Bernard, James E.; Zunger, Alex

    1988-04-01

    Whereas substitutional adamantine compounds AnB4-nC4 (e.g., ABC2 chalcopyrites for n=2, or the AC and BC zinc-blende compounds for n=4 and 0) have four metal atoms around each nonmetal atom and vice versa, ordered-vacancy compounds OVC's) AB2C4 have but three metal atoms (one A and two B's) around each nonmetal site (C) while the fourth (unoccupied) site forms an ordered array of vacancies. An example for OVC's is ``pseudocubic'' CdIn2Se4 which can be structurally derived from the layered alternate monolayer superlattice of CdSe and InSe (along the [001] direction) by removing half of the Cd atoms from each Cd plane. Such OVC's form a natural bridge between crystal and impurity physics. Much like the metal vacancy in II-VI compounds (e.g., CdSe), the vacancy in CdIn2Se4 has associated with it (nonmetal) ``dangling bonds'' and ``lone-pair'' electrons, which, however, form a dispersed band in the crystal. Using all-electron mixed-basis electronic-structure techniques, we study the properties of such an ordered array of vacancies in CdIn2Se4 vis-a$ga--vis the experimental data. We find vacancy-induced atomic relaxations (Se moves towards the vacant site), resonant broadening of the lone-pair dangling-bond states into a ~=3-eV band, and that the total charge density around the vacant site has little density and shows scant evidence of dangling bonds. We discuss the nature of the bonding in this system, comparing it to other covalent selenides and to the observed photoemission and optical data. A number of possible order-disorder transitions, including the disordering of cations on the vacant sites, are identified.

  19. Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State

    Science.gov (United States)

    Rosenauer, Andreas

    The present book is organized in the following way. The first part provides the theoretical fundamentals of transmission electron microscopy needed in the second part, which focuses on a description of strain state analysis and on the composition evaluation by lattice fringe analysis techniques. In the third part, we describe the application of these techniques to the investigation of low-dimensional semiconductor heterostructures such as InxGa1-xAs SK layers.

  20. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    OpenAIRE

    Hamad, Kimberly S.

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodyn...

  1. Proposed Coupling of an Electron Spin in a Semiconductor Quantum Dot to a Nanosize Optical Cavity

    DEFF Research Database (Denmark)

    Majumdar, Arka; Nielsen, Per Kær; Bajcsy, Michal

    2013-01-01

    We propose a scheme to efficiently couple a single quantum dot electron spin to an optical nano-cavity, which enables us to simultaneously benefit from a cavity as an efficient photonic interface, as well as to perform high fidelity (nearly 100%) spin initialization and manipulation achievable...... in bulk semiconductors. Moreover, the presence of the cavity speeds up the spin initialization process beyond the GHz range....

  2. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers.

    Science.gov (United States)

    Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

    2009-04-01

    This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).

  4. Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

    Science.gov (United States)

    Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

    2017-12-06

    Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

  5. Arene trifluoromethylation: an effective strategy to obtain air-stable n-type organic semiconductors with tunable optoelectronic and electron transfer properties.

    Science.gov (United States)

    Sun, Haoran; Putta, Anjaneyulu; Billion, Michael

    2012-08-02

    Modulation of organic semiconductor band gap, electron affinities (EA), ionization potentials (IP), and reorganization energies (λ) associated with charge transfer is critical for its applications. We report here that trifluoromethylation not only increases both IP and EA significantly as expected but also narrows the HOMO-LUMO band gaps and increases considerably the air-stability of arene-based n-type organic semiconductors. The increased air-stability results from relatively high EA energies and a change in oxidation mechanism. Calculated EAs and IPs show that trifluoromethylated arenes are excellent candidates for n-type semiconductor materials; though a moderate increase of inner-sphere reorganization energy (λi) associated with charge transfer is the penalty for the improved performance of the trifluoromethylated compounds. However, since λi decreases as the π conjugation increases, a rational design to produce air-stable n-type semiconductor materials with reasonably small λi is simply to prepare trifluoromethylated arenes with extended π conjugation. Furthermore, we found that structural isomerization can fine-tune the optoelectronic and electronic transfer properties of the corresponding aromatics.

  6. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  7. Predicting the Electronic Properties of 3D, Million-atom Semiconductor nanostructure Architectures

    Energy Technology Data Exchange (ETDEWEB)

    Jack Dongarra; Stanimire Tomov

    2012-03-15

    This final report describes the work done by Jack Dongarra (University Distinguished Professor) and Stanimire Tomov (Research Scientist) related to the DOE project entitled Predicting the Electronic Properties of 3D, Million-Atom Semiconductor Nanostructure Architectures. In this project we addressed the mathematical methodology required to calculate the electronic and transport properties of large nanostructures with comparable accuracy and reliability to that of current ab initio methods. This capability is critical for further developing the field, yet it is missing in all the existing computational methods. Additionally, quantitative comparisons with experiments are often needed for a qualitative understanding of the physics, and for guiding the design of new nanostructures. We focused on the mathematical challenges of the project, in particular on solvers and preconditioners for large scale eigenvalue problems that occur in the computation of electronic states of large nanosystems. Usually, the states of interest lie in the interior of the spectrum and their computation poses great difficulties for existing algorithms. The electronic properties of a semiconductor nanostructure architecture can be predicted/determined by computing its band structure. Of particular importance are the 'band edge states' (electronic states near the energy gap) which can be computed from a properly defined interior eigenvalue problem. Our primary mathematics and computational challenge here has been to develop an efficient solution methodology for finding these interior states for very large systems. Our work has produced excellent results in terms of developing both new and extending current state-of-the-art techniques.

  8. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, Kimberly Sue [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  9. Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

    2017-12-01

    Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

  10. Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells.

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K; Aji, Vivek; Gabor, Nathaniel M

    2017-12-01

    Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-V SD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

  11. Photoinduced electron accumulation in colloidally dispersed wide band-gap semiconductor nanosheets.

    Science.gov (United States)

    Nakato, Teruyuki; Yamada, Yoshimi; Nakamura, Mari; Takahashi, Atsushi

    2011-02-01

    We investigated photoinduced electron accumulation in a colloidal system of layered hexaniobate that is known as a photocatalytically active wide band-gap semiconductor, and attempted to control the photoresponse by introducing additives into the colloid. The inorganic nanosheets were obtained by exfoliation of the layered oxide. UV-irradiation of the colloids led to electron accumulation in the nanosheets to generate reduced niobate species. Propylammonium ions introduced as the exfoliating reagent and present as the counter ions of niobate nanosheets were indicated as the electron donor that stabilized the electron-accumulating state. Yield and half-life of the reduced niobate species greatly increased by adding an appropriate amount of photochemically inert clay nanosheets, while they increased only a little by the addition of molecular electron donors such as EDTA and triethanolamine. Moreover, the molecular species diminished the enhancement effect of the clay nanosheets. The results suggested that the photochemical event was not explained by direct interactions between the semiconductor nanosheets and the additives at molecular level but governed by indirect interactions between the colloid components regulated by the colloid structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  12. Electronic Transport Parameter of Carbon Nanotube Metal-Semiconductor On-Tube Heterojunction

    Directory of Open Access Journals (Sweden)

    Sukirno

    2009-03-01

    Full Text Available Carbon Nanotubes research is one of the top five hot research topics in physics since 2006 because of its unique properties and functionalities, which leads to wide-range applications. One of the most interesting potential applications is in term of nanoelectronic device. It has been modeled carbon nanotubes heterojunction, which was built from two different carbon nanotubes, that one is metallic and the other one is semiconducting. There are two different carbon nanotubes metal-semiconductor heterojunction. The first one is built from CNT(10,10 as metallic carbon nanotube and CNT (17,0 as semiconductor carbon nanotube. The other one is built from CNT (5,5 as metallic carbon nanotube and CNT (8,0. All of the semiconducting carbon nanotubes are assumed to be a pyridine-like N-doped. Those two heterojunctions are different in term of their structural shape and diameter. It has been calculated their charge distribution and potential profile, which would be useful for the simulation of their electronic transport properties. The calculations are performed by using self-consistent method to solve Non-Homogeneous Poisson’s Equation with aid of Universal Density of States calculation method for Carbon Nanotubes. The calculations are done by varying the doping fraction of the semiconductor carbon nanotubes The electron tunneling transmission coefficient, for low energy region, also has been calculated by using Wentzel-Kramer-Brillouin (WKB approximation. From the calculation results, it is obtained that the charge distribution as well as the potential profile of this device is doping fraction dependent. It is also inferred that the WKB method is fail to be used to calculate whole of the electron tunneling coefficient in this system. It is expected that further calculation for electron tunneling coefficient in higher energy region as well as current-voltage characteristic of this system will become an interesting issue for this carbon nanotube based

  13. Effect of deformation on the electronic structure and topological properties of the AIIMg2Bi2 (AII = Mg,Ca,Sr,Ba) compounds

    Science.gov (United States)

    Petrov, E. K.; Silkin, I. V.; Koroteev, Yu. M.; Chulkov, E. V.

    2017-04-01

    The electronic structure and topological properties of the AIIMg2Bi2 (AII = Mg,Ca,Sr,Ba) compounds are theoretically studied with the use of exact exchange. It is found that the Mg3Bi2 compound in the equilibrium state is a semimetal, whereas three other compounds are semiconductors with a direct fundamental band gap. It is predicted that the uniaxial deformation of three-component compounds results in transitions to topologically nontrivial phases: topological insulator and topological and Dirac semimetals. Owing to such a rich variety of topologically nontrivial phases, these compounds may be of interest for further theoretical and experimental studies.

  14. Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G.; Hourahine, B.; Trager-Cowan, C. [Department of Physics, SUPA, University of Strathclyde, Glasgow (United Kingdom); Vilalta-Clemente, A.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Caen (France); Gamarra, P.; Lacam, C.; Tordjman, M.; Di Forte-Poisson, M.A. [Thales Research and Technology, III-V Lab, Marcoussis (France); Parbrook, P.J. [Department of Electrical and Electronic Engineering, University of Sheffield (United Kingdom); Day, A.P. [Aunt Daisy Scientific Ltd., Claremont House, High St, Lydney (United Kingdom); England, G. [K. E. Developments Ltd., Cambridge (United Kingdom)

    2012-03-15

    We describe the use of electron channelling contrast imaging (ECCI) - in a field emission scanning electron microscope (SEM) - to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons (BSEs) as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper, we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    OpenAIRE

    Katsuaki Tanabe

    2009-01-01

    Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and pl...

  16. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  17. Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires

    Science.gov (United States)

    Huang, Yu

    Semiconductor nanowires (NW) represent an ideal system for investigating low dimensional physics and are expected to play an important role as both interconnects and functional device elements in nanoscale electronic and optoelectronic devices. This thesis presents a series of key advances towards integrated nano-systems from the bottom-up approach using semiconductor NW building blocks. We first introduce a general approach to controlled synthesis of a broad range of semiconductor NWs via a metal cluster-catalyzed vapor-liquid-solid (VLS) growth mechanism. The diameter, length, and chemical composition of the NWs are controlled by the metal catalyst diameter, the growth time and vapor phase semiconductor reactants, respectively. Electrical transport studies demonstrate that these NWs can be doped to form n- or p-type material with carrier mobilities comparable to or larger than their bulk counterparts. Photoluminescence studies show that individual NWs exhibit good optical qualities and strong polarized emission. The excellent optic and electronic properties suggests that NWs are excellent candidates for building nanoscale electronics, photonics, and integrated optoelectronics. Subsequently, we demonstrate the development of hierarchical assembly methods used to organize NW building blocks into functional devices and complex architectures. In particular, electric fields and microfluidic flows have both been explored for the assembly of NWs with controlled spatial location and directionality. Next, we discuss a variety of conceptually new nanoscale electronic and photonic devices, and device integrations enabled by high quality NWs and flexible assembly methods. A wide range of nanoscale electronic devices have been demonstrated using NW building blocks, and several new nano-device concepts have been proposed and realized, including crossed-NW p-n diodes, crossed-NW field effect transistors (cNW-FETs) and molecule-gated NW-FETs. These devices can be constructed in

  18. Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes.

    Science.gov (United States)

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-29

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation.

  19. Enhanced electron-phonon coupling for a semiconductor charge qubit in a surface phonon cavity

    Science.gov (United States)

    Chen, J. C. H.; Sato, Y.; Kosaka, R.; Hashisaka, M.; Muraki, K.; Fujisawa, T.

    2015-10-01

    Electron-phonon coupling is a major decoherence mechanism, which often causes scattering and energy dissipation in semiconductor electronic systems. However, this electron-phonon coupling may be used in a positive way for reaching the strong or ultra-strong coupling regime in an acoustic version of the cavity quantum electrodynamic system. Here we propose and demonstrate a phonon cavity for surface acoustic waves, which is made of periodic metal fingers that constitute Bragg reflectors on a GaAs/AlGaAs heterostructure. Phonon band gap and cavity phonon modes are identified by frequency, time and spatially resolved measurements of the piezoelectric potential. Tunneling spectroscopy on a double quantum dot indicates the enhancement of phonon assisted transitions in a charge qubit. This encourages studying of acoustic cavity quantum electrodynamics with surface phonons.

  20. Current instabilities under HF electron gas heating in semiconductors with negative differential conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, Yu. G.; Logvinov, G. N. [Instituto Politecnico Nacional, Mexico, D.F. (Mexico); Laricheva, N. [Datmouth College, New Hampshire (United States); Mashkevich, O. L. [Kharkov University, Kharkov (Ukraine)

    2001-10-01

    A nonlinear temperature dependence of the kinetic coefficients of semiconductor plasma can result in the appearance of regions of negative differential conductivity (NDC) in both the high-frequency (HF) and static current-voltage characteristics (CVC). In the present paper the formation of the static NDC under simultaneous electron gas heating by HF and static electric field is studied. As is shown below, in this case the heating electromagnetic wave has a pronounced effect on the appearance of NDC caused by the overheating mechanisms and the type of the static CVC as a whole. [Spanish] Una dependencia no lineal de la temperatura de los coeficientes cineticos del plasma del semiconductor puede llevar a la aparicion de regiones con conductividad diferencial negativa (CDN) en las caracteristicas corriente voltaje (CCV) de alta frecuencia (AF) y estatica. En este articulo se estudia la formacion de la CDN estatica bajo la accion simultanea del calentamiento del gas de electrones por AF y el campo electrico estatico. Como se muestra mas adelante, en este caso la onda electromagnetica que calienta a los electrones ejerce un fuerte efecto en la aparicion de la CDN; que se obtiene por mecanismos de sobrecalentamiento, y en el tipo de CCV estatica.

  1. Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study

    Science.gov (United States)

    Pashartis, C.; Rubel, O.

    2017-06-01

    Electronic properties of III-V semiconductor alloys are examined using first principles, with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host GaAs, including its impact on the photoluminescence linewidths and carrier mobilities. The extremity of localization at the band edges is correlated with the ability of individual elements to change the band gap and the relative band alignment. Additionally, the formation energies of substitutional defects are calculated and linked to challenges associated with the growth and formability of alloys. A spectrally resolved inverse participation ratio is used to map localization in prospective GaAs-based materials alloyed with B, N, In, Sb, and Bi for 1.55 -μ m -wavelength telecommunication lasers. This analysis is complemented by a band unfolding of the electronic structure and a discussion of the implications of localization on the optical gain and Auger losses. Correspondence with experimental data on the broadening of the photoluminescence spectrum and charge-carrier mobilities show that the localization characteristics can serve as a guideline for the engineering of semiconductor alloys.

  2. Electron energy loss spectroscopy on semiconductor heterostructures for optoelectronics and photonics applications.

    Science.gov (United States)

    Eljarrat, A; López-Conesa, L; Estradé, S; Peiró, F

    2016-05-01

    In this work, we present characterization methods for the analysis of nanometer-sized devices, based on silicon and III-V nitride semiconductor materials. These methods are devised in order to take advantage of the aberration corrected scanning transmission electron microscope, equipped with a monochromator. This set-up ensures the necessary high spatial and energy resolution for the characterization of the smallest structures. As with these experiments, we aim to obtain chemical and structural information, we use electron energy loss spectroscopy (EELS). The low-loss region of EELS is exploited, which features fundamental electronic properties of semiconductor materials and facilitates a high data throughput. We show how the detailed analysis of these spectra, using theoretical models and computational tools, can enhance the analytical power of EELS. In this sense, initially, results from the model-based fit of the plasmon peak are presented. Moreover, the application of multivariate analysis algorithms to low-loss EELS is explored. Finally, some physical limitations of the technique, such as spatial delocalization, are mentioned. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

  3. NCD Diamond Semiconductor System for Advanced Power Electronics Systems Integration : CRADA report

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha [AKHAN Semiconductor, Inc., Hoffman Estates, IL (United States)

    2016-07-22

    The integration of 2D materials such as molybdenum disulphide (MoS2) with diamond (3D) was achieved by forming an heterojunction between these two materials and its electrical performance was studied experimentally. The device charactertics did show good rectifying nature when p-type single crystal diamond was integrated with n-type MoS2. These results are very encouraging indicating possible applications in semiconductor electronics, however further studies are required for a detailed understanding of the transport phenomena at the MoS2/diamond interface.

  4. Theoretical modelling of semiconductor surfaces microscopic studies of electrons and photons

    CERN Document Server

    Srivastava, G P

    1999-01-01

    The state-of-the-art theoretical studies of ground state properties, electronic states and atomic vibrations for bulk semiconductors and their surfaces by the application of the pseudopotential method are discussed. Studies of bulk and surface phonon modes have been extended by the application of the phenomenological bond charge model. The coverage of the material, especially of the rapidly growing and technologically important topics of surface reconstruction and chemisorption, is up-to-date and beyond what is currently available in book form. Although theoretical in nature, the book provides

  5. Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

    KAUST Repository

    Clancy, Paulette

    2012-05-01

    We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

  6. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  7. A Fortran program for calculating electron or hole mobility in disordered semiconductors from first-principles

    Science.gov (United States)

    Li, Zi; Zhang, Xu; Lu, Gang

    2011-12-01

    A Fortran program is developed to calculate charge carrier (electron or hole) mobility in disordered semiconductors from first-principles. The method is based on non-adiabatic ab initio molecular dynamics and static master equation, treating dynamic and static disorder on the same footing. We have applied the method to calculate the hole mobility in disordered poly(3-hexylthiophene) conjugated polymers as a function of temperature and electric field and obtained excellent agreements with experimental results. The program could be used to explore structure-mobility relation in disordered semiconducting polymers/organic semiconductors and aid rational design of these materials. Program summaryProgram title: FPMu Catalogue identifier: AEJV_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEJV_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 788 580 No. of bytes in distributed program, including test data, etc.: 8 433 024 Distribution format: tar.gz Programming language: Fortran 90 Computer: Any architecture with a Fortran 90 compiler Operating system: Linux, Windows RAM: Proportional to the system size, in our example, 1.2 GB Classification: 7.9 Nature of problem: Determine carrier mobility from first-principles in disordered semiconductors as a function of temperature, electric field and carrier concentration. Solution method: Iteratively solve master equation with carrier state energy and transition rates determined from first-principles. Restrictions: Mobility for disordered semiconductors where the carrier wave-functions are localized and the carrier transport is due to phonon-assisted hopping mechanism. Running time: Depending on the system size (about an hour for the example here).

  8. Electron paramagnetic resonance study of ternary Cu compounds ...

    Indian Academy of Sciences (India)

    Abstract. We report here electron paramagnetic resonance (EPR) measurements at 9 and 34 GHz, and room temperature (T ), in powder and single crystal samples of the ternary compounds of copper nitrate or copper chloride with glycine and 1,10-phenanthroline [Cu(Gly)(phen)(H2O)]·NO3·1.5H2O (1) and.

  9. Theoretical analysis of hot electron injection from metallic nanotubes into a semiconductor interface.

    Science.gov (United States)

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-07-21

    Metallic nanostructures under optical illumination can generate a non-equilibrium high-energy electron gas (also known as hot electrons) capable of being injected into neighbouring media over a potential barrier at particle boundaries. The nature of this process is highly nanoparticle shape and size dependent. Here, we have derived an analytical expression for the frequency dependent rate of injection of these energetic electrons from a metallic nanotube into a semiconductor layer in contact with its inner boundary. In our derivation, we have considered the quantum mechanical motion of the electron gas confined by the particle boundaries in determining the electron energy spectrum and wave functions. We present a comprehensive theoretical analysis of how different geometric parameters such as the outer to inner radius ratio, length and thickness of a nanotube and illumination frequency affect the hot electron injection and internal quantum efficiency of the nanotube. We reveal that longer nanotubes with thin shells and high inner to outer radius ratios show better performance at visible and infrared frequencies. Our derivations and results provide the much needed theoretical insight for optimization of thin nanotubes for different hot electron based applications.

  10. PREFACE: 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19)

    Science.gov (United States)

    González, T.; Martín-Martínez, M. J.; Mateos, J.

    2015-10-01

    The 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) was held at the Hospedería Fonseca (Universidad de Salamanca, Spain), on 29 June - 2 July, 2015, and was organized by the Electronics Area from the University of Salamanca. The Conference is held biannually and covers the recent progress in the field of electron dynamics in solid-state materials and devices. This was the 19th meeting of the international conference series formerly named Hot Carriers in Semiconductors (HCIS), first held in Modena in 1973. In the edition of 1997 in Berlin the name of the conference changed to International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, keeping the same acronym, HCIS; and finally in the edition of Montpellier in 2009 the name was again changed to the current one, International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON). The latest editions took place in Santa Barbara, USA, in 2011 and Matsue, Japan, in 2013. Research work on electron dynamics involves quite different disciplines, and requires both fundamental and technological scientific efforts. Attendees to the conference come mostly from academic institutions, belonging to both theoretical and experimental groups working in a variety of fields, such as solid-state physics, electronics, optics, electrical engineering, material science, laser physics, etc. In this framework, events like the EDISON conference become a basic channel for the progress in the field. Here, researchers working in different areas can meet, present their latest advances and exchange their ideas. The program of EDISON'19 included 13 invited papers, 61 oral contributions and 73 posters. These contributions originated from scientists in more than 30 different countries. The Conference gathered 140 participants, coming from 24 different countries, most from Europe, but also with a significant participation

  11. Joint Services Electronics Program.

    Science.gov (United States)

    1983-09-30

    Compound Semiconductors." 4 ......... I-*. Univesity of California. Berkeley Electronics Research Laboratory Joint Services Electronics Program August 15...reduction techniques [SCH-66,MCG- 73,HAM-75], for essentially i educing the proportionality constant. A significant portion of the probabilistic literature

  12. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja

    2011-09-14

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  13. Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Kuwahara, Makoto, E-mail: kuwahara@esi.nagoya-u.ac.jp; Saitoh, Koh; Tanaka, Nobuo [Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); EcoTopia Science Institute, Nagoya University, Nagoya 464-8603 (Japan); Kusunoki, Soichiro; Nambo, Yoshito; Ujihara, Toru; Asano, Hidefumi [Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); Jin, Xiuguang [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Takeda, Yoshikazu [Aichi Synchrotron Radiation Center, Seto 489-0965 (Japan); Nagoya Science Industry Institute, Nagoya 460-0008 (Japan)

    2014-11-10

    The brightness and interference fringes of a spin-polarized electron beam extracted from a semiconductor photocathode excited by laser irradiation are directly measured via its use in a transmission electron microscope. The brightness was 3.8 × 10{sup 7 }A cm{sup −2 }sr{sup −1} for a 30-keV beam energy with the polarization of 82%, which corresponds to 3.1 × 10{sup 8 }A cm{sup −2 }sr{sup −1} for a 200-keV beam energy. The resulting electron beam exhibited a long coherence length at the specimen position due to the high parallelism of (1.7 ± 0.3) × 10{sup −5 }rad, which generated interference fringes representative of a first-order correlation using an electron biprism. The beam also had a high degeneracy of electron wavepacket of 4 × 10{sup −6}. Due to the high polarization, the high degeneracy and the long coherence length, the spin-polarized electron beam can enhance the antibunching effect.

  14. Detection of Infrared Photons Using the Electronic Stress in Metal-Semiconductor Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Datskos, P.G.; Datskou, I.; Egert, C.M.; Rjic, S.

    1999-04-05

    It is well known that the work function of metals decreases when they are placed in a nonpolar liquid. A similar decrease occurs when the metal is placed into contact with a semiconductor forming a Schottky barrier. We report on a new method for detecting photons using the stress caused by photo-electrons emitted from a metal film surface in contact with a semiconductor microstructure. The photoelectrons diffuse into the microstructure and produce an electronic stress. The photon detection results from the measurement of the photo-induced bending of the microstructure. Internal photoemission has been used in the past to detect photons, however, in those cases the detection was accomplished by measuring the current due to photoelectrons and not due to electronic stress. Small changes in position (displacement) of microstructures are routinely measured in atomic force microscopy (AFM) where atomic imaging of surfaces relies on the measurement of small changes (< l0{sup -9} m) in the bending of microcantilevers. In the present work we studied the photon response of Si microcantilevers coated with a thin film of Pt. The Si microcantilevers were 500 nm thick and had a 30 nm layer of Pt. Photons with sufficient energies produce electrons from the platinum-silicon interface which diffuse into the Si and produce an electronic stress. Since the excess charge carriers cause the Si microcantilever to contract in length but not the Pt layer, the bimaterial microcantilever bends. In our present studies we used the optical detection technique to measure the photometric response of Pt-Si microcantilevers as a function of photon energy. The charge carriers responsible for the photo-induced stress in Si, were produced via internal photoemission using a diode laser with wavelength {lambda} = 1550 nm.

  15. Effect of disorder on the magnetic and electronic structure of a prospective spin-gapless semiconductor MnCrVAl

    Directory of Open Access Journals (Sweden)

    P. Kharel

    2017-05-01

    Full Text Available Recent discovery of a new class of materials, spin-gapless semiconductors (SGS, has attracted considerable attention in the last few years, primarily due to potential applications in the emerging field of spin-based electronics (spintronics. Here, we investigate structural, electronic, and magnetic properties of one potential SGS compound, MnCrVAl, using various experimental and theoretical techniques. Our calculations show that this material exhibits ≈ 0.5 eV band gap for the majority-spin states, while for the minority-spin it is nearly gapless. The calculated magnetic moment for the completely ordered structure is 2.9 μB/f.u., which is different from our experimentally measured value of almost zero. This discrepancy is explained by the structural disorder. In particular, A2 type disorder, where Mn or Cr atoms exchange their positions with Al atoms, results in induced antiferromagnetic exchange coupling, which, at a certain level of disorder, effectively reduces the total magnetic moment to zero. This is consistent with our x-ray diffraction measurements which indicate the presence of A2 disorder in all of our samples. In addition, we also show that B2 disorder does not result in antiferromagnetic exchange coupling and therefore does not significantly reduce the total magnetic moment.

  16. Electronic structure and thermoelectric properties of half-Heusler compounds with eight electron valence count—KScX (X = C and Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Ciftci, Yasemin O. [Department of Physics, Gazi University, Teknikokullar, Ankara 06500 (Turkey); Mahanti, Subhendra D. [Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States)

    2016-04-14

    Electronic band structure and structural properties of two representative half-Heusler (HH) compounds with 8 electron valence count (VC), KScC and KScGe, have been studied using first principles methods within density functional theory and generalized gradient approximation. These systems differ from the well studied class of HH compounds like ZrNiSn and ZrCoSb which have VC = 18 because of the absence of d electrons of the transition metal atoms Ni and Co. Electronic transport properties such as Seebeck coefficient (S), electrical conductivity (σ), electronic thermal conductivity (κ{sub e}) (the latter two scaled by electronic relaxation time), and the power factor (S{sup 2}σ) have been calculated using semi-classical Boltzmann transport theory within constant relaxation time approximation. Both the compounds are direct band gap semiconductors with band extrema at the X point. Their electronic structures show a mixture of heavy and light bands near the valance band maximum and highly anisotropic conduction and valence bands near the band extrema, desirable features of good thermoelectric. Optimal p- or n-type doping concentrations have been estimated based on thermopower and maximum power factors. The optimum room temperature values of S are ∼1.5 times larger than that of the best room temperature thermoelectric Bi{sub 2}Te{sub 3}. We also discuss the impact of the band structure on deviations from Weidemann-Franz law as one tunes the chemical potential across the band gap.

  17. Molecular Engineering of Non-Halogenated Solution-Processable Bithiazole based Electron Transport Polymeric Semiconductors

    KAUST Repository

    Fu, Boyi

    2015-04-01

    The electron deficiency and trans planar conformation of bithiazole is potentially beneficial for the electron transport performance of organic semiconductors. However, the incorporation of bithiazole into polymers through a facile synthetic strategy remains a challenge. Herein, 2,2’-bithiazole was synthesized in one step and copolymerized with dithienyldiketopyrrolopyrrole to afford poly(dithienyldiketopyrrolopyrrole-bithiazole), PDBTz. PDBTz exhibited electron mobility reaching 0.3 cm2V-1s-1 in organic field-effect transistor (OFET) configuration; this contrasts with a recently discussed isoelectronic conjugated polymer comprising an electron rich bithiophene and dithienyldiketopyrrolopyrrole, which displays merely hole transport characteristics. This inversion of charge carrier transport characteristics confirms the significant potential for bithiazole in the development of electron transport semiconducting materials. Branched 5-decylheptacyl side chains were incorporated into PDBTz to enhance polymer solubility, particularly in non-halogenated, more environmentally compatible solvents. PDBTz cast from a range of non-halogenated solvents exhibited film morphologies and field-effect electron mobility similar to those cast from halogenated solvents.

  18. Synthesis and unusual electron paramagnetic resonance spectrum of metastable nanoclusters of ZnO semiconductor crystallites.

    Science.gov (United States)

    Ram, S; Kundu, T K

    2004-11-01

    Metastable nanoclusters of ZnO semiconductor crystallites, 20 to 30 nm diameter, are synthesized by a reconstructive decomposition of a polymer precursor of dispersed Zn2+ cations in poly vinyl alcohol (PVA) polymer molecules. They have EPR (electron paramagnetic resonance) spectrum of distinct excitonic features. Multiple EPR bands appear in prominent intensities in oxygen vacancies VO+ and singly ionized Oi- and Zn(i)+ interstitials. A paramagnetic VO+ vacancy derives from usual diamagnetic O2- vacancy of VO++ (behaves as if doubly charged compared to the lattice) by addition of one electron. The results demonstrate the existence of a surface-interface or surface barrier layer in free-carrier depletion at the crystallite surface in the clusters and its effects on the Oi- and Zn(i)+ ionization states (determine green photoluminescence). Both VO+ and Zn(i)+ are curable by a thermal annealing in O2 gas. A cured sample of equilibrium structure achieved by heating at approximately 550 degrees C has a single EPR in Oi- at g = 1.990. The results are useful in understanding their correlation with EPR and optical properties in ZnO semiconductors and devices.

  19. Longitudinal spin relaxation of donor-bound electrons in direct band-gap semiconductors

    Science.gov (United States)

    Linpeng, Xiayu; Karin, Todd; Durnev, M. V.; Barbour, Russell; Glazov, M. M.; Sherman, E. Ya.; Watkins, S. P.; Seto, Satoru; Fu, Kai-Mei C.

    2016-09-01

    We measure the donor-bound electron longitudinal spin-relaxation time (T1) as a function of magnetic field (B ) in three high-purity direct band-gap semiconductors: GaAs, InP, and CdTe, observing a maximum T1 of 1.4, 0.4, and 1.2 ms, respectively. In GaAs and InP at low magnetic field, up to ˜2 T, the spin-relaxation mechanism is strongly density and temperature dependent and is attributed to the random precession of the electron spin in hyperfine fields caused by the lattice nuclear spins. In all three semiconductors at high magnetic field, we observe a power-law dependence T1∝B-ν with 3 ≲ν ≲4 . Our theory predicts that the direct spin-phonon interaction is important in all three materials in this regime in contrast to quantum dot structures. In addition, the "admixture" mechanism caused by Dresselhaus spin-orbit coupling combined with single-phonon processes has a comparable contribution in GaAs. We find excellent agreement between high-field theory and experiment for GaAs and CdTe with no free parameters, however a significant discrepancy exists for InP.

  20. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Somodi, P.K.; Twitchett-Harrison, A.C.; Midgley, P.A. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Kardynał, B.E. [Peter Grünberg Institute 9, Forschungszentrum Jülich, D-52425 Jülich (Germany); Barnes, C.H.W. [Department of Physics, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Dunin-Borkowski, R.E., E-mail: rafaldb@gmail.com [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute 5, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2013-11-15

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p–n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p–n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. - Highlights: • Finite element simulations are performed to calculate electrostatic dopant potentials in TEM specimens that contain p–n junctions. • The effect of the electrical state of the specimen surface on the projected potential is assessed for equipotential specimen surfaces. • The step in projected potential is always found to be lower than the step in potential in the bulk device. • The step in projected potential is least sensitive to surface state energy for thicker specimens and higher dopant concentrations. • The depletion width measured from the projected potential has a complicated dependence on specimen thickness.

  1. Hydrogen-bonded organic semiconductor micro- and nanocrystals: from colloidal syntheses to (opto-)electronic devices.

    Science.gov (United States)

    Sytnyk, Mykhailo; Głowacki, Eric Daniel; Yakunin, Sergii; Voss, Gundula; Schöfberger, Wolfgang; Kriegner, Dominik; Stangl, Julian; Trotta, Rinaldo; Gollner, Claudia; Tollabimazraehno, Sajjad; Romanazzi, Giuseppe; Bozkurt, Zeynep; Havlicek, Marek; Sariciftci, Niyazi Serdar; Heiss, Wolfgang

    2014-11-26

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants.

  2. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    Science.gov (United States)

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  3. Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Yazdi, Sadegh, E-mail: sadegh.yazdi@cen.dtu.dk [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Lyngby (Denmark); Kasama, Takeshi; Beleggia, Marco; Samaie Yekta, Maryam [Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Lyngby (Denmark); McComb, David W. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43210 (United States); Twitchett-Harrison, Alison C. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); Dunin-Borkowski, Rafal E. [Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Lyngby (Denmark); Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2015-05-15

    Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p–n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic potential simulations highlights several remaining challenges to quantitative analysis. Our results illustrate how the determination of reliable potential distributions from phase images of electrically biased devices requires electrostatic fringing fields, surface charges, specimen preparation damage and the effects of limited spatial resolution to be taken into account.

  4. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  5. Lattice Location of Radioactive Probes in Semiconductors and Metals by Electron and Positron Channelling

    CERN Multimedia

    2002-01-01

    The channelling effect of decay-electrons and positrons is used for the localization of radioactive impurities implanted into single crystals. Because of the low implantation doses and the variety of different isotopes available at ISOLDE, this technique is especially suited for applications in semiconducting materials. \\\\ \\\\ Channelling measurements in Si, GaAs and GaP implanted with In-, Cd- and Xe-isotopes have demonstrated that impurity lattice sites can be studied directly after implantation without any annealing. The electron-channelling technique can be ideally combined with hyperfine interaction techniques like Moessbauer s This was shown for the formation of In-vacancy complexes in ion-implanted Ni. \\\\ \\\\ We intend to continue the lattice location measurements in semiconductors implanted with various radioactive impurities of Cd, In, Sn, Sb and Te.

  6. Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs.

    Science.gov (United States)

    Hosono, Hideo; Kim, Junghwan; Toda, Yoshitake; Kamiya, Toshio; Watanabe, Satoru

    2017-01-10

    Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm2/(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability.

  7. High-pressure effects on intramolecular electron transfer compounds

    CERN Document Server

    He Li Ming; Li Hong; Zhang Bao Wen; Li Yi; Yang Guo Qiang

    2002-01-01

    We explore the effect of pressure on the fluorescence spectra of the intramolecular electron transfer compound N-(1-pyrenylmethyl), N-methyl-4-methoxyaniline (Py-Am) and its model version, with poly(methyl methacrylate) blended in, at high pressure up to 7 GPa. The emission properties of Py-Am and pyrene show distinct difference with the increase of pressure. This difference indicates the strength of the charge transfer interaction resulting from the adjusting of the conformation of Py-Am with increase of pressure. The relationship between the electronic state of the molecule and pressure is discussed.

  8. Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics

    Science.gov (United States)

    Chen, Guannan

    Understanding the effects of finite size and dimensionality on the interaction of light with nanoscale semiconductor heterostructure is central to identifying and exploiting novel modes in optoelectronic devices. In type-I heterostructured core-shell GaAs/AlxGa1-xAs nanowires, the real space transfer (RST) of photogenerated hot electrons across the interface from the GaAs core to the AlxGa1-xAs shell forms the basis of a new family of optoelectronic devices by a carefully designed and optimized nanofabrication process. Due to the large mobility difference, we observed negative differential resistance (NDR) on single nanowire devices. External modulation of the transfer rates, manifested as a large tunability of the voltage onset of NDR, is achieved using three different modes: electrostatic gating, incident photon flux, and photon energy. In this dissertation, the physics of coupling of external control to transfer rate was investigated. The combined influences of geometric confinement, heterojunction shape and carrier scattering on hot-electron transfer is discussed. Temperature-dependent transport study under monochromatic tunable laser illumination reveals an ultrafast carrier dynamics related to RST of excess carriers, which provides an insight into hot carrier cooling. Device element showing adjustable phase shift and frequency doubling of ac modulation is demonstrated. For a full understanding, Carrier transport properties are probed through electron beam induced current, which is capable of imaging sub-surface feature in excess carrier transport. Along with simulation of injected electron trajectories, selective probing of core and shell by tuning electron beam energies reveals axial and bias dependent transport along parallel channels. The drift and diffusion component of the excess carrier current is deconvoluted from a coupled decay length, from which lower than bulk shell electron mobility is extracted. A precise knowledge of band edge discontinuities at

  9. A study of the semiconductor compound СuAlO2 by the method of nuclear quadrupole resonance of Cu

    Science.gov (United States)

    Matukhin, V. L.; Khabibulin, I. Kh.; Shul'gin, D. A.; Smidt, S. V.

    2012-07-01

    The method of nuclear quadrupole resonance of Cu (NQR Cu) is used to study the samples of a semiconductor compound CuAlO2. The crystal structure of CuAlO2 belongs to the family of delafossite - the mineral of a basic CuFeO2 structure. Transparent semiconductor oxides, such as CuAlO2, have attracted recent attention as promising thermoelectric materials.

  10. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

    OpenAIRE

    Jena, Debdeep; Heikman, Sten; Green, Daniel; Yaacov, Ilan B.; Coffie, Robert; Xing, Huili; Keller, Stacia; DenBaars, Steve; Speck, James S.; Mishra, Umesh K.

    2002-01-01

    We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization doped electron distributions than comparable shallow donor doped structures. The technique is readily employed for creating...

  11. Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins.

    Science.gov (United States)

    Iwasaki, Takayuki; Naruki, Wataru; Tahara, Kosuke; Makino, Toshiharu; Kato, Hiromitsu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Hatano, Mutsuko

    2017-02-28

    The electric field inside semiconductor devices is a key physical parameter that determines the properties of the devices. However, techniques based on scanning probe microscopy are limited to sensing at the surface only. Here, we demonstrate the direct sensing of the internal electric field in diamond power devices using single nitrogen-vacancy (NV) centers. The NV center embedded inside the device acts as a nanoscale electric field sensor. We fabricated vertical diamond p-i-n diodes containing the single NV centers. By performing optically detected magnetic resonance measurements under reverse-biased conditions with an applied voltage of up to 150 V, we found a large splitting in the magnetic resonance frequencies. This indicated that the NV center senses the transverse electric field in the space-charge region formed in the i-layer. The experimentally obtained electric field values are in good agreement with those calculated by a device simulator. Furthermore, we demonstrate the sensing of the electric field in different directions by utilizing NV centers with different N-V axes. This direct and quantitative sensing method using an electron spin in a wide-band-gap material provides a way to monitor the electric field in operating semiconductor devices.

  12. Structural and Electronic Investigations of Complex Intermetallic Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Hyunjin [Iowa State Univ., Ames, IA (United States)

    2008-01-01

    In solid state chemistry, numerous investigations have been attempted to address the relationships between chemical structure and physical properties. Such questions include: (1) How can we understand the driving forces of the atomic arrangements in complex solids that exhibit interesting chemical and physical properties? (2) How do different elements distribute themselves in a solid-state structure? (3) Can we develop a chemical understanding to predict the effects of valence electron concentration on the structures and magnetic ordering of systems by both experimental and theoretical means? Although these issues are relevant to various compound classes, intermetallic compounds are especially interesting and well suited for a joint experimental and theoretical effort. For intermetallic compounds, the questions listed above are difficult to answer since many of the constituent atoms simply do not crystallize in the same manner as in their separate, elemental structures. Also, theoretical studies suggest that the energy differences between various structural alternatives are small. For example, Al and Ga both belong in the same group on the Periodic Table of Elements and share many similar chemical properties. Al crystallizes in the fcc lattice with 4 atoms per unit cell and Ga crystallizes in an orthorhombic unit cell lattice with 8 atoms per unit cell, which are both fairly simple structures (Figure 1). However, when combined with Mn, which itself has a very complex cubic crystal structure with 58 atoms per unit cell, the resulting intermetallic compounds crystallize in a completely different fashion. At the 1:1 stoichiometry, MnAl forms a very simple tetragonal lattice with two atoms per primitive unit cell, while MnGa crystallizes in a complicated rhombohedral unit cell with 26 atoms within the primitive unit cell. The mechanisms influencing the arrangements of atoms in numerous crystal structures have been studied theoretically by calculating electronic

  13. Calculation of the spectrum of quasiparticle electron excitations in organic molecular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Tikhonov, E. V., E-mail: tikhonov@mig.phys.msu.ru [Moscow State University (Russian Federation); Uspenskii, Yu. A. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Khokhlov, D. R. [Moscow State University (Russian Federation)

    2015-06-15

    A quasiparticle electronic spectrum belongs to the characteristics of nanoobjects that are most important for applications. The following methods of calculating the electronic spectrum are analyzed: the Kohn-Sham equations of the density functional theory (DFT), the hybrid functional method, the GW approximation, and the Lehmann approximation used in the spectral representation of one-electron Green’s function. The results of these approaches are compared with the data of photoemission measurements of benzene, PTCDA, and phthalocyanine (CuPc, H{sub 2}Pc, FePc, PtPc) molecules, which are typical representatives of organic molecular semiconductors (OMS). This comparison demonstrates that the Kohn-Sham equations of DFT incorrectly reproduce the electronic spectrum of OMS. The hybrid functional method correctly describes the spectrum of the valence and conduction bands; however, the HOMO-LUMO gap width is significantly underestimated. The correct gap width is obtained in both the GW approximation and the Lehmann approach, and the total energy in this approach can be calculated in the local density approximation of DFT.

  14. Enhancement of Deep Acceptor Activation in Semiconductors by Superlattice Doping

    National Research Council Canada - National Science Library

    Schubert, E

    2002-01-01

    Gallium nitride (GaN) and related compounds are wide bandgap semiconductors suited for high power transistors and many other electronic and optoelectronic devices operating at high frequencies and elevated temperatures...

  15. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  16. On the impact of isoelectric impurities on band bowing and disorder of compound semiconductors; Ueber den Einfluss von isoelektronischen Stoerstellen auf Bandbiegung und Unordnung in Verbindungshalbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Karcher, Christian

    2012-03-16

    Isolectronic impurities and their impact on the properties of compound semiconductors is discussed in two systems: Nitrogen in Ga(As,P) quantum wells on the one hand and Sulfur and Selenium in bulk ZnTe. The properties are reduced to two experimentally observable aspects: Band Bowing, i.e. the non-linearity of the band gap of the compound semiconductor and disorder, i.e. in particular the formation of a strongly localized density of states beneath the fundamental band gap. Apart of the pure experimental studies an insight into the theoretical model of disorder-induced temperature dependent luminescence properties of the compound semiconductors by means of Monte Carlo Simulations is given.

  17. The effects of heavy doping on the electronic states in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sernelius, B.E.

    1987-01-01

    The physics of semiconductors is reviewed. Topics included in the discussion are energy of the dopant system (kinetic energy in a many-valley semiconductor, exchange energy in an ellipsoidal Fermi volume, energy in a polar semiconductor), self energy shifts, band-gap narrowing, and piezo experiments. 31 refs., 27 figs.

  18. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  19. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  20. Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

    Science.gov (United States)

    Kim, Joon-Il; Peters, John A.; He, Yihui; Liu, Zhifu; Das, Sanjib; Kontsevoi, Oleg Y.; Kanatzidis, Mercouri G.; Wessels, Bruce W.

    2017-10-01

    Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg3Se2I2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as first-principles density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 1013-1015c m-3 and capture cross sections of ˜10-16c m2 . A distinct persistent photoconductivity is observed at both low temperatures (230 K), with major implications for room-temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (VHg, VSe, and VI) and interstitials (Seint) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.

  1. Temperature dependence of band gaps in semiconductors: electron-phonon interaction

    Energy Technology Data Exchange (ETDEWEB)

    Kremer, Reinhard K.; Cardona, M.; Lauck, R. [MPI for Solid State Research, Stuttgart (Germany); Bhosale, J.; Ramdas, A.K. [Physics Dept., Purdue University, West Lafayette, IN (United States); Burger, A. [Fisk University, Dept. of Life and Physical Sciences, Nashville, TN (United States); Munoz, A. [MALTA Consolider Team, Dept. de Fisica Fundamental II, Universidad de La Laguna, Tenerife (Spain); Instituto de Materiales y Nanotecnologia, Universidad de La Laguna, Tenerife (Spain); Romero, A.H. [CINVESTAV, Dept. de Materiales, Unidad Queretaro, Mexico (Mexico); MPI fuer Mikrostrukturphysik, Halle an der Saale (Germany)

    2013-07-01

    We investigate the temperature dependence of the energy gap of several semiconductors with chalcopyrite structure and re-examine literature data and analyze own high-resolution reflectivity spectra in view of our new ab initio calculations of their phonon properties. This analysis leads us to distinguish between materials with d-electrons in the valence band (e.g. CuGaS{sub 2}, AgGaS{sub 2}) and those without d-electrons (e.g. ZnSnAs{sub 2}). The former exhibit a rather peculiar non-monotonic temperature dependence of the energy gap which, so far, has resisted cogent theoretical description. We demonstrate it can well be fitted by including two Bose-Einstein oscillators with weights of opposite sign leading to an increase at low-T and a decrease at higher T's. We find that the energy of the former correlates well with characteristic peaks in the phonon density of states associated with low-energy vibrations of the d-electron constituents.

  2. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  3. Photon absorption and photocurrent in solar cells below semiconductor bandgap due to electron photoemission from plasmonic nanoantennas

    DEFF Research Database (Denmark)

    Novitsky, Andrey; Uskov, Alexander; Gritti, Claudia

    2014-01-01

    We model the electron photoemission frommetal nanoparticles into a semiconductor in a Schottky diode with a conductive oxide electrode hosting the nanoparticles. We show that plasmonic effects in the nanoparticles lead to a substantial enhancement in photoemission compared with devices with conti....... Such structure can form the dais of the development of plasmonic photoemission enhanced solar cells....

  4. Electronic structure of metallic antiperovskite compound GaCMn$_3$

    OpenAIRE

    Shim, J. H.; Kwon, S. K.; Min, B. I.

    2002-01-01

    We have investigated electronic structures of antiperovskite GaCMn$_3$ and related Mn compounds SnCMn$_3$, ZnCMn$_3$, and ZnNMn$_3$. In the paramagnetic state of GaCMn$_3$, the Fermi surface nesting feature along the $\\Gamma{\\rm R}$ direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector {\\bf Q} $\\sim \\Gamma{\\rm R}$. Calculated susceptibilities confirm the nesting scenario for GaCMn$_3$ and also explain various magnetic structures of other antipe...

  5. The structural, elastic, electronic and dynamical properties of chalcopyrite semiconductor BeGeAs{sub 2} from first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Ciftci, Yasemin Oe. [Gazi University Teknikokullar, Department of Physics, Faculty of Sciences, Ankara (Turkey); Evecen, Meryem; Aldirmaz, Emine [Amasya University, Department of Physics, Faculty of Arts and Sciences, Amasya (Turkey)

    2017-01-15

    First-principles calculations for the structural, elastic, electronic and vibrational properties of BeGeAs{sub 2} with chalcopyrite structure have been reported in the frame work of the density functional theory. The calculated ground state properties are in good agreement with the available data. By considering the electronic band structure and electronic density of states calculation, it is found that this compound is a semiconductor which confirmed the previous work. Single-crystal elastic constants and related properties such as Young's modulus, Poisson ratio, shear modulus and bulk modulus have been predicted using the stress-finite strain technique. It can be seen from the calculated elastic constants that this compound is mechanically stable in the chalcopyrite structure. Pressure dependences of elastic constants and band gap are also reported. Finally, the phonon dispersion curves and total and partial density of states were calculated and discussed. The calculated phonon frequencies BeGeAs{sub 2} are positive, indicating the dynamical stability of the studied compound. (orig.)

  6. Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility

    Directory of Open Access Journals (Sweden)

    Shinji Yasui

    2012-01-01

    Full Text Available We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. This paper describes the fluorine compound adsorption properties of both the solid adsorbents—calcium carbonate and the sodium compound—for the optimal design of the fixation furnace. An analysis of the gas-solid reaction rate was performed from the experimental results of the breakthrough curve by using a fixed-bed reaction model, and the reaction rate constants and adsorption capacity were obtained for achieving an optimal process design.

  7. Structure/Property Relations in "Giant" Semiconductor Nanocrystals: Opportunities in Photonics and Electronics.

    Science.gov (United States)

    Navarro-Pardo, Fabiola; Zhao, Haiguang; Wang, Zhiming M; Rosei, Federico

    2017-12-20

    Semiconductor nanocrystals exhibit size-tunable absorption and emission ranging from the ultraviolet (UV) to the near-infrared (NIR) spectral range, high absorption coefficient, and high photoluminescence quantum yield. Effective surface passivation of these so-called quantum dots (QDs) may be achieved by growing a shell of another semiconductor material. The resulting core/shell QDs can be considered as a model system to study and optimize structure/property relations. A special case consists in growing thick shells (1.5 up to few tens of nanometers) to produce "giant" QDs (g-QDs). Tailoring the chemical composition and structure of CdSe/CdS and PbS/CdS g-QDs is a promising approach to widen the spectral separation of absorption and emission spectra (i.e., the Stokes shift), improve the isolation of photogenerated carriers from surface defects and enhance charge carrier lifetime and mobility. However, most stable systems are limited by a thick CdS shell, which strongly absorbs radiation below 500 nm, covering the UV and part of the visible range. Modification of the interfacial region between the core and shell of g-QDs or tuning their doping with narrow band gap semiconductors are effective approaches to circumvent this challenge. In addition, the synthesis of g-QDs composed of environmentally friendly elements (e.g., CuInSe2/CuInS2) represents an alternative to extend their absorption into the NIR range. Additionally, the band gap and band alignment of g-QDs can be engineered by proper selection of the constituents according to their band edge positions and by tuning their stoichiometry during wet chemical synthesis. In most cases, the quasi-type II localization regime of electrons and holes is achieved. In this type of g-QDs, electrons can leak into the shell region, while the holes remain confined within the core region. This electron-hole spatial distribution is advantageous for optoelectronic devices, resulting in efficient electron-hole separation while

  8. Thermal Processing of Semiconductor Materials Using Soft-Vacuum Electron Beams.

    Science.gov (United States)

    Moore, Cameron Alden

    Electron beams generated in gaseous discharges have been used to perform a variety of thermal treatments germane to semiconductor fabrication. The unique beams employed in these studies are typified by high continuous power (>100 watts per cm^2 of cathode surface), operation in relatively high pressures (0.05-25 Torr), and a wide variety of beam configurations. The ability to extract and direct high power densities lends itself to the heat treatment of silicon-based semiconductor materials. Initial studies examined the rapid thermal processing of various materials and structures using a 7.5 cm. diameter electron beam. Using this source both the annealing of ion implanted single crystal silicon and the formation of titanium disilicide were performed. The repair of damage in single-crystal silicon wafers induced by ions of boron, phosphorus, and arsenic was repaired with minimum redistribution of the dopant profile. The same apparatus was also used to form titanium silicide from both co-deposited and sequentially deposited constituent materials. While low resistivity phases of both materials were obtained, each would exhibit high resistivity behavior as well. Excessive heating of co-deposited films on silicon dioxide induces reactions between the two films, causing oxygen to be incorporated in the silicide. Ti-on-Si structures self-cleanse oxygen from the silicide during formation, in contradiction to known Si-O and Ti-O thermodynamics. A line-source (150 mm x 2 mm) electron beam was used to recrystallize silicon films deposited on oxidized silicon wafers up to 100 mm in diameter. Agglomeration of the silicon while molten was prevented via the use of (i) an encapsulating silicon dioxide film, and (ii) the introduction of appropriate wetting agents into the deposited silicon during wafer preparation. A limiting constraint to the recrystallization of full wafers was the construction of a background heater which can heat the wafer to 1200 ^circC with a uniformity of

  9. Electronic transport in semiconductor nanowires: physics studies and possible device applications

    Science.gov (United States)

    Samuelson, Lars

    2007-03-01

    Semiconductor nanowires are attractive for physics as well as for applications due to the highly ideal character of their electronic and structural properties. We grow our III-V nanowires by what can be described as guided self-assembly, by which we can accurately control location as well as dimensions of epitaxially nucleated nanowires. The level of control of growth allows controlled formation of axial as well as radial heterostructures. I will describe studies of charge transport via single, double and multiple quantum dots positioned inside InAs/InP nanowires. Such studies have allowed detailed studies of the addition of electrons one-by-one, from the very first electron into an empty quantum dot to the addition of up to 50 electrons. By replacing the one-dimensional emitter by a small quantum dot in a double-dot configuration, the discrete character of the injecting state allows ever more detailed spectroscopic studies of the charge additions to the second dot. Comparisons will be made with transport through quantum dots defined by tunnel barriers induced via gating techniques. Finally, a recently developed technique for the formation vertical wrap-gate field-effect transistors around InAs nanowires will be described, suggesting interesting opportunities for the realization of high-speed and low-power transistors and circuits. The geometrical design of such nanowire wrap-gate field-effect transistors, offers exciting ways of formation of ultra-short transistor gate-lengths as well as the use of heterostructures to further enhance the performance of such devices.

  10. The Role of Electronic Excitations on Chemical Reaction Dynamics at Metal, Semiconductor and Nanoparticle Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tully, John C. [Yale Univ., New Haven, CT (United States)

    2017-06-10

    Chemical reactions are often facilitated and steered when carried out on solid surfaces, essential for applications such as heterogeneous catalysis, solar energy conversion, corrosion, materials processing, and many others. A critical factor that can determine the rates and pathways of chemical reactions at surfaces is the efficiency and specificity of energy transfer; how fast does energy move around and where does it go? For reactions on insulator surfaces energy transfer generally moves in and out of vibrations of the adsorbed molecule and the underlying substrate. By contrast, on metal surfaces, metallic nanoparticles and semiconductors, another pathway for energy flow opens up, excitation and de-excitation of electrons. This so-called “nonadiabatic” mechanism often dominates the transfer of energy and can directly impact the course of a chemical reaction. Conventional computational methods such as molecular dynamics simulation do not account for this nonadiabatic behavior. The current DOE-BES funded project has focused on developing the underlying theoretical foundation and the computational methodology for the prediction of nonadiabatic chemical reaction dynamics at surfaces. The research has successfully opened up new methodology and new applications for molecular simulation. In particular, over the last three years, the “Electronic Friction” theory, pioneered by the PI, has now been developed into a stable and accurate computational method that is sufficiently practical to allow first principles “on-the-fly” simulation of chemical reaction dynamics at metal surfaces.

  11. Ti2MnZ (Z=Al, Ga, In compounds: Nearly spin gapless semiconductors

    Directory of Open Access Journals (Sweden)

    H. Y. Jia

    2014-04-01

    Full Text Available Ti2MnZ (Z=Al, Ga, In compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.

  12. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is

  13. Organic molecules on metal and oxide semiconductor substrates: Adsorption behavior and electronic energy level alignment

    Science.gov (United States)

    Ruggieri, Charles M.

    Modern devices such as organic light emitting diodes use organic/oxide and organic/metal interfaces for crucial processes such as charge injection and charge transfer. Understanding fundamental physical processes occurring at these interfaces is essential to improving device performance. The ultimate goal of studying such interfaces is to form a predictive model of interfacial interactions, which has not yet been established. To this end, this thesis focuses on obtaining a better understanding of fundamental physical interactions governing molecular self-assembly and electronic energy level alignment at organic/metal and organic/oxide interfaces. This is accomplished by investigating both the molecular adsorption geometry using scanning tunneling microscopy, as well as the electronic structure at the interface using direct and inverse photoemission spectroscopy, and analyzing the results in the context of first principles electronic structure calculations. First, we study the adsorption geometry of zinc tetraphenylporphyrin (ZnTPP) molecules on three noble metal surfaces: Au(111), Ag(111), and Ag(100). These surfaces were chosen to systematically compare the molecular self-assembly and adsorption behavior on two metals of the same surface symmetry and two surface symmetries of one metal. From this investigation, we improve the understanding of self-assembly at organic/metal interfaces and the relative strengths of competing intermolecular and molecule-substrate interactions that influence molecular adsorption geometry. We then investigate the electronic structure of the ZnTPP/Au(111), Ag(111), and Ag(100) interfaces as examples of weakly-interacting systems. We compare these cases to ZnTPP on TiO2(110), a wide-bandgap oxide semiconductor, and explain the intermolecular and molecule-substrate interactions that determine the electronic energy level alignment at the interface. Finally we study tetracyanoquinodimethane (TCNQ), a strong electron acceptor, on TiO2

  14. Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

    Energy Technology Data Exchange (ETDEWEB)

    Ritz, Elvira

    2009-06-04

    At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

  15. A step towards molecular electronics. The ferrocene molecule on a metal-semiconductor system

    Energy Technology Data Exchange (ETDEWEB)

    Schmeidel, Jedrzej Piotr

    2012-05-14

    In the first part, the domain walls on Ag {radical}(3) x {radical}(3) are investigated and structural and electronic model are introduced and discussed. Furthermore, the temperature dependence is investigated, showing the Peierls-type transition along the domain wall chain. In the second part, the high resolution STM data of the local adsorption geometry of FDT on Ag {radical}(3)< x {radical}(3) are presented. The comparison of theoretical results obtained for the molecule, on Ag(lll) and Ag {radical}(3) x {radical}(3) surfaces, with STM measurement at RT, support the chemisorption with thiolate bonds to the Ag trimers on the HCT surface. The molecule is aligned with the Cp-Fe-Cp axis parallel to the surface, while the rotational freedom of the molecule is limited due to chemisorption. The presented adsorption model is supported by experiment and simulation. In the third part, the perfect Ag {radical}(3) x {radical}(3) is prepared and investigated by means of STM, focusing on structural and electronic characteristics. The different reconstructions and amounts of Ag on Si are investigated; the submonolayer amounts, Ag {radical}(3) x {radical}(3) wetting layers, perfect epitaxial layers and multilayer systems. The influence of wetting layer on electronic character of deposited Ag nanostructures is studied. The occurrence of effective single and double barriers in tunnelling microscopy and spectroscopy for the Ag {radical}(3) x <{radical}(3) system is investigated in the monolayer regime by varying the measurement and preparation conditions. The Coulomb Blockade oscillations are found for granular multilayer Ag films, whereas similar structures with existence of Ag {radical}(3) x {radical}(3) show only a single barrier characteristic. The vertical transport properties in this metal/ semiconductor system depend on the structure and bonding on the atomic scale and on the lateral two-dimensional properties of the interface.

  16. Machine learning of molecular electronic properties in chemical compound space

    Science.gov (United States)

    Montavon, Grégoire; Rupp, Matthias; Gobre, Vivekanand; Vazquez-Mayagoitia, Alvaro; Hansen, Katja; Tkatchenko, Alexandre; Müller, Klaus-Robert; Anatole von Lilienfeld, O.

    2013-09-01

    The combination of modern scientific computing with electronic structure theory can lead to an unprecedented amount of data amenable to intelligent data analysis for the identification of meaningful, novel and predictive structure-property relationships. Such relationships enable high-throughput screening for relevant properties in an exponentially growing pool of virtual compounds that are synthetically accessible. Here, we present a machine learning model, trained on a database of ab initio calculation results for thousands of organic molecules, that simultaneously predicts multiple electronic ground- and excited-state properties. The properties include atomization energy, polarizability, frontier orbital eigenvalues, ionization potential, electron affinity and excitation energies. The machine learning model is based on a deep multi-task artificial neural network, exploiting the underlying correlations between various molecular properties. The input is identical to ab initio methods, i.e. nuclear charges and Cartesian coordinates of all atoms. For small organic molecules, the accuracy of such a ‘quantum machine’ is similar, and sometimes superior, to modern quantum-chemical methods—at negligible computational cost.

  17. Study of Optoelectronics Properties of Anisotropic Semiconductor Compounds with Ordered Stochiometric Vacancy

    National Research Council Canada - National Science Library

    Roud, Iouri

    2004-01-01

    .... and photoluminescence measurements in a temperature range 77-300K mainly on the crystallographically oriented CdGeAs2 CdGa2S4 and HgGa2S4 single crystals - the most important representatives of these compounds...

  18. Intriguing electronic properties of two-dimensional MoS2/TM2CO2 (TM = Ti, Zr, or Hf) hetero-bilayers: type-II semiconductors with tunable band gaps.

    Science.gov (United States)

    Li, Xinru; Dai, Ying; Ma, Yandong; Liu, Qunqun; Huang, Baibiao

    2015-03-27

    Two-dimensional (2D) transition metal compound (TMC) monolayers, as well as their van der Waals heterostructures with unique properties, are fundamentally and technologically intriguing. Here, heterostructures consisting of a MoS2 monolayer and TM2CO2 (TM = Ti, Zr or Hf) monolayers are systematically researched by means of the density functional theory (DFT). Different from semiconductor/metal contacts, MoS2 and TM2CO2 monolayers are all semiconductors with band gaps ranging from 0.25-1.67 eV. According to rigorous screening of stacking patterns, MoS2/Zr2CO2 is shown to be an indirect type-II semiconductor with the maximum valence and minimum conduction bands spatially separated on opposite monolayers. Simultaneously, the interface charges transfer from Zr2CO2 to MoS2 results in a built-in field that separates the electrons and holes efficiently. Also, the smaller effective masses of electrons and the holes of band edges indicate the higher carrier mobility. Moreover, strain regulation can make the hetero-bilayer's character a semiconductor-semimetal-metal transition. The physical insights pave the way for the good performance of MoS2/TM2CO2 in next-generation electronic devices and photocatalysts.

  19. High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Baumann, Frieder H., E-mail: fhbauman@us.ibm.com [IBM Microelectronics Division, 2070 Route 52, Hopewell Junction, New York 12533 (United States)

    2014-06-30

    A classical method used to characterize the strain in modern semiconductor devices is nanobeam diffraction (NBD) in the transmission electron microscope. One challenge for this method lies in the fact that the smaller the beam becomes, the more difficult it becomes to analyze the resulting diffraction spot pattern. We show that a carefully designed fitting algorithm enables us to reduce the sampling area for the diffraction patterns on the camera chip dramatically (∼1/16) compared to traditional settings without significant loss of precision. The resulting lower magnification of the spot pattern permits the presence of an annular dark field detector, which in turn makes the recording of images for drift correction during NBD acquisition possible. Thus, the reduced sampling size allows acquisition of drift corrected NBD 2D strain maps of up to 3000 pixels while maintaining a precision of better than 0.07%. As an example, we show NBD strain maps of a modern field effect transistor (FET) device. A special filtering feature used in the analysis makes it is possible to measure strain in silicon devices even in the presence of other crystalline materials covering the probed area, which is important for the characterization of the next generation of devices (Fin-FETs).

  20. Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach

    Science.gov (United States)

    Jiang, J. H.; Wu, M. W.

    2009-03-01

    Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron-nonmagnetic-impurity, electron-phonon, electron-electron, electron-hole, and electron-hole exchange (the Bir-Aronov-Pikus mechanism) scatterings are explicitly included. The Elliott-Yafet mechanism is also fully incorporated. This approach offers a way toward thorough understanding of electron spin relaxation both near and far away from the equilibrium in the metallic regime. The dependences of the spin relaxation time on electron density, temperature, initial spin polarization, photo-excitation density, and hole density are studied thoroughly with the underlying physics analyzed. We find that these dependences are usually qualitatively different in the nondegenerate and degenerate regimes. In contrast to the previous investigations in the literature, we find that: (i) In n -type materials, the Elliott-Yafet mechanism is less important than the D’yakonov-Perel’ mechanism, even for the narrow band-gap semiconductors such as InSb and InAs. (ii) The density dependence of the spin relaxation time is nonmonotonic and we predict a peak in the metallic regime in both n -type and intrinsic materials. (iii) In intrinsic materials, the Bir-Aronov-Pikus mechanism is found to be negligible compared with the D’yakonov-Perel’ mechanism. We also predict a peak in the temperature dependence of spin relaxation time which is due to the nonmonotonic temperature dependence of the electron-electron Coulomb scattering in intrinsic materials with small initial spin polarization. (iv) In p -type III-V semiconductors, the Bir-Aronov-Pikus mechanism dominates spin relaxation in the low-temperature regime only when the photoexcitation density is low. When the photoexcitation density is high, the Bir-Aronov-Pikus mechanism can be comparable with the D’yakonov-Perel’ mechanism only in the moderate

  1. Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

    Science.gov (United States)

    Vernon, S. M.; Spitzer, M. B.; Keavney, C. J.; Haven, V. E.; Sekula, P. A.

    1986-01-01

    A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

  2. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institut fuer Physik, Muenchen (Germany)]|[Max-Planck-Institut fuer Extraterrestrische Physik, Garching (Germany). Semiconductor Lab.

    1999-07-01

    The following topics were dealt with: semiconductor radiation detectors, basic semiconductor structures, semiconductors, energy measurement, radiation-level measurement, position measurement, electronics of the readout function, detectors with intrinsic amplification, detector technology, device stability, radiation hardness and device simulation.

  3. Measurement of laser activated electron tunneling from semiconductor zinc oxide to adsorbed organic molecules by a matrix assisted laser desorption ionization mass spectrometer.

    Science.gov (United States)

    Zhong, Hongying; Fu, Jieying; Wang, Xiaoli; Zheng, Shi

    2012-06-04

    Measurement of light induced heterogeneous electron transfer is important for understanding of fundamental processes involved in chemistry, physics and biology, which is still challenging by current techniques. Laser activated electron tunneling (LAET) from semiconductor metal oxides was observed and characterized by a MALDI (matrix assisted laser desorption ionization) mass spectrometer in this work. Nanoparticles of ZnO were placed on a MALDI sample plate. Free fatty acids and derivatives were used as models of organic compounds and directly deposited on the surface of ZnO nanoparticles. Irradiation of UV laser (λ=355 nm) with energy more than the band gap of ZnO produces ions that can be detected in negative mode. When TiO(2) nanoparticles with similar band gap but much lower electron mobility were used, these ions were not observed unless the voltage on the sample plate was increased. The experimental results indicate that laser induced electron tunneling is dependent on the electron mobility and the strength of the electric field. Capture of low energy electrons by charge-deficient atoms of adsorbed organic molecules causes unpaired electron-directed cleavages of chemical bonds in a nonergodic pathway. In positive detection mode, electron tunneling cannot be observed due to the reverse moving direction of electrons. It should be able to expect that laser desorption ionization mass spectrometry is a new technique capable of probing the dynamics of electron tunneling. LAET offers advantages as a new ionization dissociation method for mass spectrometry. Copyright © 2012 Elsevier B.V. All rights reserved.

  4. Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

    Energy Technology Data Exchange (ETDEWEB)

    Korobova, N., E-mail: korobova3@mail.ru; Timoshenkov, S. [Department of Microelectronics, National Research University of Electronic Technology (MIET), Zelenograd (Russian Federation); Almasov, N.; Prikhodko, O. [al-Farabi Kazakh National University, Almaty (Kazakhstan); Tsendin, K. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2014-10-21

    Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As{sub 40}Se{sub 30}S{sub 30} spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As{sub 40}Se{sub 30}S{sub 30} films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

  5. Electronic properties of InAs-based metal-insulator-semiconductor structures

    CERN Document Server

    Kuryshev, G L; Valisheva, N A

    2001-01-01

    The peculiarities of electronic processes in InAs-based MIS structures operating in the charge injection device mode and using as photodetectors in spectral range 2.5-3.05 mu m are investigated. A two-layer system consisting of anodic oxide and low-temperature silicon dioxide is used as an insulator. It is shown that fluoride-containing components that is introduced into the electrolyte decreases the value of the built-in charge and the surface state static density down to minimal measurable values <= 2 x 10 sup 1 sup 0 cm sup - sup 2 eV sup - sup 2. Physical and chemical characteristics of the surface states at the InAs-dielectric interface are discussed on the basis of data on phase composition of anodic oxides obtained by means of X-ray photoelectronic spectroscopy. Anomalous field generation was also observed under the semiconductor non-equilibrium depletion. The processes of tunnel generation and the noise behavior of MIS structures under non-equilibrium depletion are investigated

  6. Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

    Science.gov (United States)

    Miyao, Masanobu; Sadoh, Taizoh

    2017-05-01

    Recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints. Liquid-phase growth based on SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-on-insulator (GOI) structures, which show defect-free GOI with very high carrier mobility (˜1040 cm2 V-1 s-1). Additionally, SiGe mixed-crystals with laterally uniform composition were obtained by eliminating segregation phenomena during the melt-back process. Low-temperature solid-phase growth has been explored by combining this process with ion-beam irradiation, additional doping of group-IV elements, metal induced lateral crystallization with/without electric field, and metal-induced layer exchange crystallization. These efforts have enabled crystal growth on insulators below 400 °C, achieving high carrier mobility (160-320 cm2 V-1 s-1). Moreover, orientation-controlled SiGe and Ge films on insulators have been obtained below the softening temperatures of conventional plastic films (˜300 °C). Detailed characterization provides an understanding of physical phenomena behind these crystal growth techniques. Applying these methods when fabricating next-generation electronics is also discussed.

  7. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  8. Artificial photosynthesis: semiconductor photocatalytic fixation of CO2 to afford higher organic compounds.

    Science.gov (United States)

    Hoffmann, Michael R; Moss, John A; Baum, Marc M

    2011-05-21

    Carbon dioxide is an appealing renewable feedstock for industrial chemical processes. This does not mean, however, that all chemical processes using CO(2) are environmentally-friendly. Perspectives on the sustainability of CO(2) utilization and artificial photosynthesis are provided. The discussions focus on the photocatalytic production of C(x) (x≥ 2) compounds, where all the carbon in the products is derived from CO(2). This area of research, while promising, has received far less attention than analogous systems leading to C(1) products.

  9. Ultrafast Electron Transfer at Organic Semiconductor Interfaces: Importance of Molecular Orientation

    KAUST Repository

    Ayzner, Alexander L.

    2015-01-02

    © 2014 American Chemical Society. Much is known about the rate of photoexcited charge generation in at organic donor/acceptor (D/A) heterojunctions overaged over all relative arrangements. However, there has been very little experimental work investigating how the photoexcited electron transfer (ET) rate depends on the precise relative molecular orientation between D and A in thin solid films. This is the question that we address in this work. We find that the ET rate depends strongly on the relative molecular arrangement: The interface where the model donor compound copper phthalocyanine is oriented face-on with respect to the fullerene C60 acceptor yields a rate that is approximately 4 times faster than that of the edge-on oriented interface. Our results suggest that the D/A electronic coupling is significantly enhanced in the face-on case, which agrees well with theoretical predictions, underscoring the importance of controlling the relative interfacial molecular orientation.

  10. Thiophene-S,S-dioxidized Indophenine: A Quinoid-Type Building Block with High Electron Affinity for Constructing n-Type Polymer Semiconductors with Narrow Band Gaps.

    Science.gov (United States)

    Deng, Yunfeng; Sun, Bin; He, Yinghui; Quinn, Jesse; Guo, Chang; Li, Yuning

    2016-03-01

    Three thiophene-S,S-dioxidized indophenine (IDTO) isomers, 3 a (E,E,E), 3 b (Z,E,E), and 3 c (Z,E,Z), were synthesized by oxidation of an indophenine compound. 3 b and 3 c could be converted into the most-stable 3 a by heating at 110 °C. An IDTO-containing conjugated polymer, PIDTOTT, was prepared using 3 a as a comonomer through a Stille coupling reaction, and it possesses a narrow band gap and low energy levels. In organic field effect transistors (OFETs), PIDTOTT exhibited unipolar n-type semiconductor characteristics with unexpectedly high electron mobility (up to 0.14 cm(2)  V(-1)  s(-1)), despite its rather disordered chain packing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Dosimetry with semiconductor diodes in the application to the full-length irradiation technique of electrons; Dosimetria con diodos semiconductores en la aplicacion a la tecnica de irradiacion de cuerpo entero de electrones

    Energy Technology Data Exchange (ETDEWEB)

    Madrid G, O. A.; Rivera M, T. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Calz. Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico)

    2012-10-15

    The use of charged particles as electrons for the tumor-like lesions treatment to total surface of skin is not very frequent, the types of fungo id mycosis and cutaneous lymphomas compared with other neoplasms they are relatively scarce, however for the existent cases a non conventional technique should be contemplated as treatment alternative that can reach an effective control. In this work the variables of more influence with ionization chamber and semiconductor diodes are studied for to determine the quality of an electrons beam. (Author)

  12. Inelastic Scattering in STEM for Studying Structural and Electronic Properties of Chalcogenide-Based Semiconductor Nanocrystals

    Science.gov (United States)

    Gunawan, Aloysius Andhika

    Transmission electron microscopy (TEM) relies upon elastic and inelastic scattering signals to perform imaging and analysis of materials. TEM images typically contain contributions from both types of scattering. The ability to separate the contributions from elastic and inelastic processes individually through energy filter or electron energy loss spectroscopy (EELS) allows unique analysis that is otherwise unachievable. Two prominent types of inelastic scattering probed by EELS, namely plasmon and core-loss excitations, are useful for elucidating structural and electronic properties of chalcogenide-based semiconductor nanocrystals. The elastic scattering, however, is still a critical part of the analysis and used in conjunction with the separated inelastic scattering signals. The capability of TEM operated in scanning mode (STEM) to perform localized atomic length scale analysis also permits the understanding of the nanocrystals unattainable by other techniques. Despite the pivotal role of inelastic scatterings, their contributions for STEM imaging, particularly high-angle annular dark field STEM (HAADF-STEM), are not completely understood. This is not surprising since it is currently impossible to experimentally separate the inelastic signals contributing to HAADF-STEM images although images obtained under bright-field TEM mode can be analyzed separately from their scattering contributions using energy-filtering devices. In order to circumvent such problem, analysis based on simulation was done. The existing TEM image simulation algorithm called Multislice method, however, only accounts for elastic scattering. The existing Multislice algorithm was modified to incorporate (bulk or volume) plasmon inelastic scattering. The results were verified based on data from convergent-beam electron diffraction (CBED), electron energy loss spectroscopy (EELS), and HAADF-STEM imaging as well as comparison to experimental data. Dopant atoms are crucial factors which control

  13. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    CERN Document Server

    Cho, T; Kohagura, J; Hirata, M; Minami, R; Watanabe, H; Sasuga, T; Nishizawa, Y; Yoshida, M; Nagashima, S; Nakashima, Y; Ogura, K; Tamano, T; Yatsu, K; Miyoshi, S

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO sub 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO sub 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availabi...

  14. Donor spectroscopy at large hydrostatic pressures and transport studies in compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Leonardo [Univ. of California, Berkeley, CA (United States)

    1997-06-01

    In the first part of this work, the author describes studies of donors in AlSb and in GaAs at large hydrostatic pressures, two materials in which the conduction band minimum is not parabolic, but has a camel`s back shape. These donors were found to display only one or two absorption lines corresponding to ground to bound excited state transitions. It is shown that due to the non-parabolic dispersion, camel's back donors may have as few as one bound excited state and that higher excited states are auto-ionized. Thus, it is possible that transitions to these other states may be lost in the continuum. In the second part, calculations of mobilities in GaN and other group III-Nitride based structures were performed. GaN is interesting in that the carriers in nominally undoped material are thought to originate from impurities which have an ionization energy level resonant with the conduction band, rather than located in the forbidden gap. These donors have a short range potential associated with them which can be effective in scattering electrons in certain situations. It was found that effects of these resonant donors can be seen only at high doping levels in III-Nitride materials and in AlxGa1-xN alloys, where the defect level can be pushed into the forbidden gap. Calculations were also performed to find intrinsic mobility limits in AlxGa1-xN/GaN modulation doped heterostructures. Theoretical predictions show that electron mobilities in these devices are capable of rivaling those found in the best AlxGa1-xAs/GaAs heterostructures structures today. However, the currently available nitride heterostructures, while displaying mobilities superior to those in bulk material, have sheet carrier concentrations too large to display true two-dimensional electron gas behavior.

  15. Investigation of the nature of the unpaired electron states in the organic semiconductor N-methyl-N-ethylmorpholinium-tetracyanoquinodimethane

    DEFF Research Database (Denmark)

    Rice, M. J.; Yartsev, V. M.; Jacobsen, Claus Schelde

    1980-01-01

    The nature of the unpaired electron states in the dimerized phase of the crystalline organic semiconductor N-methyl-N-ethylmorpholinium-tetracyanoquinodimethane [MEM(TCNQ)2] is investigated by the combined means of polarized-optical-reflectance measurements and microscopic theoretical analysis....... It is found that each unpaired electron is localized on a dimeric TCNQ unit, and it is demonstrated that the two-site molecular orbital (MO) which accommodates the unpaired electron involves internal molecular distortion of the dimeric unit. Experimental values are deduced for the intradimer π MO hopping...... integral, the TCNQ monomer ag molecular-vibration frequencies and linear-electron-molecular-vibration coupling constants, and the difference in energy of the slightly nonequivalent TCNQ monomer π MO's. The dimer charge oscillation associated with the extremely weak coupling of the unpaired electron...

  16. Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying

    Science.gov (United States)

    Kutana, Alex; Penev, Evgeni S.; Yakobson, Boris I.

    2014-05-01

    Binary alloys present a promising venue for band gap engineering and tuning of other mechanical and electronic properties of materials. Here we use the density-functional theory and cluster expansion to investigate the thermodynamic stability and electronic properties of 2D transition metal dichalcogenide (TMD) binary alloys. We find that mixing electron-accepting or electron-donating transition metals with 2D TMD semiconductors leads to degenerate p- or n-doping, respectively, effectively rendering them metallic. We then proceed to investigate the electronic properties of semiconductor-semiconductor alloys. The exploration of the configurational space of the 2D molybdenum-tungsten disulfide (Mo1-xWxS2) alloy beyond the mean field approximation yields insights into anisotropy of the electron and hole effective masses in this material. The effective hole mass in the 2D Mo1-xWxS2 is nearly isotropic and is predicted to change almost linearly with the tungsten concentration x. In contrast, the effective electron mass shows significant spatial anisotropy. The values of the band gap in 2D Mo1-xWxS2 and MoSe2(1-x)S2x are found to be configuration-dependent, exposing the limitations of the mean field approach to band gap analysis in alloys.

  17. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  18. Probing the band structure and local electronic properties of low-dimensional semiconductor structures

    Science.gov (United States)

    Walrath, Jenna Cherie

    Low-dimensional semiconductor structures are important for a wide variety of applications, and recent advances in nanoscale fabrication are paving the way for increasingly precise nano-engineering of a wide range of materials. It is therefore essential that the physics of materials at the nanoscale are thoroughly understood to unleash the full potential of nanotechnology, requiring the development of increasingly sophisticated instrumentation and modeling. Of particular interest is the relationship between the local density of states (LDOS) of low-dimensional structures and the band structure and local electronic properties. This dissertation presents the investigation of the band structure, LDOS, and local electronic properties of nanostructures ranging from zero-dimensional (0D) quantum dots (QDs) to two-dimensional (2D) thin films, synthesizing computational and experimental approaches including Poisson-Schrodinger band structure calculations, scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and scanning thermoelectric microscopy (SThEM). A method is presented for quantifying the local Seebeck coefficient (S) with SThEM, using a quasi-3D conversion matrix approach to directly convert temperature gradient-induced voltages S. For a GaAs p-n junction, the resulting S-profile is consistent with that computed using the free carrier concentration profile. This combined computational-experimental approach is expected to enable nanoscale measurements of S across a wide variety of heterostructure interfaces. The local carrier concentration, n, is profiled across epitaxial InAs/GaAs QDs, where SThEM is used to profile the temperature gradient-induced voltage, which is converted to a profile of the local S and finally to an n profile. The S profile is converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. The combined computational-experimental approach suggests a reduced n in the QD center in

  19. Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

    Science.gov (United States)

    Mahdy, M. R. C.; Al Sayem, Ayed; Shahriar, Arif; Shawon, Jubayer; Al-Quaderi, Golam Dastegir; Jahangir, Ifat; Matin, M. A.

    2016-04-01

    In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.

  20. Effects of hydrostatic pressure on the thermoelectric properties of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: an ab initio study

    Science.gov (United States)

    Elsayed, H.; Olguín, D.; Cantarero, A.

    2017-12-01

    This work presents an ab initio study of the effects of hydrostatic pressure on the Seebeck coefficients and thermoelectric power factors of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds. Our study is performed using the semi-classical Boltzmann theory and the rigid band approach. The electronic band structures of these materials are calculated using the full-potential linearized augmented plane-wave method. The obtained thermoelectric properties are discussed in terms of the results of the electronic structure calculations. As we will show, our calculated Seebeck coefficient values indicate that these materials are good alternatives to other well-studied thermoelectric systems.

  1. Anchoring semiconductor and metal nanoparticles on a two-dimensional catalyst mat. Storing and shuttling electrons with reduced graphene oxide.

    Science.gov (United States)

    Lightcap, Ian V; Kosel, Thomas H; Kamat, Prashant V

    2010-02-10

    Using reduced graphene oxide (RGO) as a two-dimensional support, we have succeeded in selective anchoring of semiconductor and metal nanoparticles at separate sites. Photogenerated electrons from UV-irradiated TiO(2) are transported across RGO to reduce silver ions into silver nanoparticles at a location distinct from the TiO(2) anchored site. The ability of RGO to store and shuttle electrons, as visualized via a stepwise electron transfer process, demonstrates its capability to serve as a catalyst nanomat and transfer electrons on demand to adsorbed species. These findings pave the way for the development of next generation catalyst systems and can spur advancements in graphene-based composites for chemical and biological sensors.

  2. Photoinduced electron donor/acceptor processes in colloidal II-VI semiconductor quantum dots and nitroxide free radicals

    Science.gov (United States)

    Dutta, Poulami

    Electron transfer (ET) processes are one of the most researched topics for applications ranging from energy conversion to catalysis. An exciting variation is utilizing colloidal semiconductor nanostructures to explore such processes. Semiconductor quantum dots (QDs) are emerging as a novel class of light harvesting, emitting and charge-separation materials for applications such as solar energy conversion. Detailed knowledge of the quantitative dissociation of the photogenerated excitons and the interfacial charge- (electron/hole) transfer is essential for optimization of the overall efficiency of many such applications. Organic free radicals are the attractive counterparts for studying ET to/from QDs because these undergo single-electron transfer steps in reversible fashion. Nitroxides are an exciting class of stable organic free radicals, which have recently been demonstrated to be efficient as redox mediators in dye-sensitized solar cells, making them even more interesting for the aforementioned studies. This dissertation investigates the interaction between nitroxide free radicals TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl), 4-amino-TEMPO (4-amino- 2,2,6,6-tetramethylpiperidine-1-oxyl) and II-VI semiconductor (CdSe and CdTe) QDs. The nature of interaction in these hybrids has been examined through ground-state UV-Vis absorbance, steady state and time-resolved photoluminescence (PL) spectroscopy, transient absorbance, upconversion photoluminescence spectroscopy and electron paramagnetic resonance (EPR). The detailed analysis of the PL quenching indicates that the intrinsic charge transfer is ultrafast however, the overall quenching is still limited by the lower binding capacities and slower diffusion related kinetics. Careful analysis of the time resolved PL decay kinetics reveal that the decay rate constants are distributed and that the trap states are involved in the overall quenching process. The ultrafast hole transfer from CdSe QDs to 4-Amino TEMPO observed

  3. First principles electronic structure and optical properties of the Zintl compound Eu3In2P4

    KAUST Repository

    Singh, Nirpendra

    2011-05-01

    We have performed full-potential calculations of the electronic structure and optical properties of the newly found Zintl compound Eu3In 2P4. Eu3In2P4 turns out to be a small gap semiconductor with an energy gap of 0.42 eV, which is in agreement with the experimental value of 0.452 eV. The peaks of the optical spectra originate mainly from transitions between occupied Eu 4f states in the valence band and unoccupied Eu 5d states in the conduction band. A considerable anisotropy is observed for the parallel and perpendicular components in the frequency dependent optical spectra. The spectral features are explained in terms of the band structure. © 2011 Elsevier B.V. All rights reserved.

  4. Tl{sub 4}CdI{sub 6} – Wide band gap semiconductor: First principles modelling of the structural, electronic, optical and elastic properties

    Energy Technology Data Exchange (ETDEWEB)

    Piasecki, M., E-mail: m.piasecki@ajd.czest.pl [Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, 42-200 Czestochowa (Poland); Brik, M.G. [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Ravila 14C, Tartu 50411 (Estonia); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Kityk, I.V. [Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, 42-200 Czestochowa (Poland)

    2015-08-01

    A novel infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using the density functional theory (DFT)-based techniques. Its structural, electronic, optical and elastic properties were all calculated in the generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) with the Ceperley-Alder–Perdew-Zunger (CA–PZ) functionals. The studied material is a direct band gap semiconductor with the calculated band gaps of 2.043 eV (GGA) and 1.627 eV (LDA). The wavelength dependence of the refractive index was fitted to the Sellmeier equation in the spectral range from 400 to 2000 nm. Good agreement between the GGA-calculated values of refractive index and experimental data was achieved. To the best of our knowledge, this is the first consistent theoretical description of the title compound, which includes calculations and analysis of the structural, electronic, optical and elastic properties. - Graphical abstract: Display Omitted - Highlights: • Infrared optoelectronic material Tl{sub 4}CdI{sub 6} was studied using ab initio methods. • Structural, electronic, optical and elastic properties were calculated. • Independent components of the elastic constants tensor were calculated. • Good agreement with available experimental results was achieved.

  5. Study of kinetic models for nonlinear electron transport in semiconductor superlattices

    OpenAIRE

    Álvaro Ballesteros, Mariano

    2011-01-01

    Las superredes de semiconductores son cristales unidimensionales artificiales formados por muchos períodos, cada uno de ellos compuesto por dos semiconductores diferentes pero con constantes similares, por ejemplo GaAs y AlAs. Estas nanoestructuras fueron inventadas por Esaki y Tsu con el propósito de desarrollar dispositivos en los que pudieran ser observadas las oscilaciones de Bloch. Tienen aplicaciones prácticas como osciladores de alta frecuencia, láseres de cascada cuántica o detectores...

  6. Mapping the electrical properties of semiconductor junctions - the electron holographic approach

    DEFF Research Database (Denmark)

    Twitchett-Harrison, A.C.; Dunin-Borkowski, Rafal E.; Midgley, P.A.

    2008-01-01

    The need to determine the electrical properties of semiconductor junctions with high spatial resolution Is as pressing now as ever. One technique that offers the possibility of quantitative high-resolution mapping of two- and three-dimensional electrostatic potential distributions is off-axis ele......The need to determine the electrical properties of semiconductor junctions with high spatial resolution Is as pressing now as ever. One technique that offers the possibility of quantitative high-resolution mapping of two- and three-dimensional electrostatic potential distributions is off...

  7. Determination of the electron-hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

    CERN Document Server

    Scholze, F; Kuschnerus, P; Rabus, H; Richter, M; Ulm, G

    2000-01-01

    Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron-hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66+-0.03) eV fo...

  8. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  9. Present trends and realisations in readout electronics for semiconductor detectors in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Gatti, E. (Politecnico di Milano (Italy). Ist. di Fisica); Manfredi, P.F. (Pavia Univ. (Italy). Ist. di Elettronica; Istituto Nazionale di Fisica Nucleare, Milan (Italy))

    1984-09-15

    Design criteria of signal processors for semiconductor detectors in high energy physics experiments are reviewed. Choice of input active devices of preamplifiers, detector-device capacitive matching, preamplifier configurations, variant and invariant signal processors are discussed. Several examples of processors for microstrip silicon detectors and for silicon detector telescopes are reviewed with particular emphasis on noise performance and high rate capabilities.

  10. Electron-hole droplet formation in direct-gap semiconductors observed by mid-infrared pump-probe spectroscopy.

    Science.gov (United States)

    Nagai, M; Shimano, R; Kuwata-Gonokami, M

    2001-06-18

    Mid-infrared pump-probe measurements with subpicosecond time resolution reveal the existence of a metastable condensed phase of the electron-hole ensemble in a direct-gap semiconductor CuCl. High-density electrons and holes are directly created in a low-temperature state by the resonant femtosecond excitation of excitons above the Mott transition density. Strong metallic reflection with a plasma frequency Planck's over 2pi(omega)p approximately 0.5 eV builds up within 0.3 ps. Within a few picoseconds, the mid-infrared reflection spectrum is transformed from metalliclike into colloidlike. The observed resonance feature at Planck's over 2pi(omega)p/sqrt[3] allows us to obtain the carrier density in the metastable electron-hole droplets of 2x10(20) cm(-3).

  11. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schulthess, Thomas C [ORNL; Temmerman, Walter M [Daresbury Laboratory, UK; Szotek, Zdzislawa [Daresbury Laboratory, UK; Svane, Axel [University of Aarhus, Denmark; Petit, Leon [ORNL

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  12. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

    2007-04-23

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

  13. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  14. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    Science.gov (United States)

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

  15. The electronic structure of the mixed valence compound Pb3O4

    NARCIS (Netherlands)

    Groot, R.A. de; Haas, C.; deGroot, R.A.

    Ab initio self-consistent calculations of the electronic structure of Pb3O4 are presented. The calculations show that Pb3O4 is a semiconductor. The calculated bandgap of 1.1 eV is smaller than the observed gap of 2.1-2.2 eV. The calculations show strong hybridization between Pb(6s) and O(2p) states.

  16. Dimers of nineteen-electron sandwich compounds: Crystal and electronic structures, and comparison of reducing strengths

    KAUST Repository

    Mohapatra, Swagat Kumar

    2014-10-03

    The dimers of some Group 8 metal cyclopentadienyl/ arene complexes and Group 9 metallocenes can be handled in air, yet are strongly reducing, making them useful n-dopants in organic electronics. In this work, the Xray molecular structures are shown to resemble those of Group 8 metal cyclopentadienyl/pentadienyl or Group 9 metal cyclopentadienyl/diene model compounds. Compared to those of the model compounds, the DFT HOMOs of the dimers are significantly destabilized by interactions between the metal and the central C-C σ-bonding orbital, accounting for the facile oxidation of the dimers. The lengths of these C-C bonds (X-ray or DFT) do not correlate with DFT dissociation energies, the latter depending strongly on the monomer stabilities. Ru and Ir monomers are more reducing than their Fe and Rh analogues, but the corresponding dimers also exhibit much higher dissociation energies, so the estimated monomer cation/neutral dimer potentials are, with the exception of that of [RhCp2]2, rather similar (-1.97 to-2.15 V vs. FeCp2 +/0 in THF). The consequences of the variations in bond strength and redox potentials for the reactivity of the dimers are discussed.

  17. An amorphous oxide semiconductor thin-film transistor route to oxide electronics

    OpenAIRE

    Wager, John F.; Yeh, Bao; Hoffman, Randy L.; Keszler, Douglas A.

    2014-01-01

    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium galliu...

  18. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    OpenAIRE

    Sytnyk, Mykhailo; Głowacki, Eric Daniel; Yakunin, Sergii; Voss, Gundula; Schöfberger, Wolfgang; Kriegner, Dominik; Stangl, Julian; Trotta, Rinaldo; Gollner, Claudia; Tollabimazraehno, Sajjad; Romanazzi, Giuseppe; BOZKURT, Zeynep; Havlicek, Marek; Sariciftci, Niyazi Serdar; Heiss, Wolfgang

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient ...

  19. Design, Construction and Performance Evaluation of a Metal Oxide Semiconductor (MOS Based Machine Olfaction (Electronic Nose for Monitoring of Banana Ripeness

    Directory of Open Access Journals (Sweden)

    A Sanaeifar

    2015-03-01

    Full Text Available Aroma is one of the most important sensory properties of fruits and is particularly sensitive to the changes in fruit compounds. Gases involved in aroma of fruits are produced from the metabolic activities during ripening, harvest, post-harvest and storage stages. Therefore, the emitted aroma of fruits changes during the shelf-life period. The electronic nose (machine olfaction would simulate the human sense of smell to identify and realize the complex aromas by using an array of chemical sensors. In this research, a low cost electronic nose based on six metal oxide semiconductor (MOS sensors were designed, developed and implemented and its ability for monitoring changes in aroma fingerprint during ripening of banana was studied. The main components are used in the e-nose system include sampling system, an array of gas sensors, data acquisition system and an appropriate pattern recognition algorithm. Linear Discriminant Analysis (LDA technique was used for classification of the extracted features of e-nose signals. Based on the results, the classification accuracy of 97/3% was obtained. Results showed the high ability of e-nose for distinguishing between the stages of ripening. It is concluded that the system can be considered as a nondestructive tool for quality control during banana shelf-life.

  20. Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

    Science.gov (United States)

    Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

    2013-01-01

    Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.

  1. Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Kong, X; Trampert, A [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany); Ristic, J; Sanchez-Garcia, M A; Calleja, E [Departamento IngenierIa Electronica, ETSI Telecomunicacion, Universidad Politecnica, Ciudad Universitaria, E-28040 Madrid (Spain)

    2011-10-14

    Channeling-enhanced electron energy-loss spectroscopy is applied to determine the polarity of ultra-small nitride semiconductor nanocolumns in transmission electron microscopy. The technique demonstrates some practical advantages in the nanostructure analysis, especially for feature sizes of less than 50 nm. We have studied GaN and (Al, Ga)N nanocolumns grown in a self-assembled way by molecular beam epitaxy directly on bare Si(111) substrates and on AlN buffer layers, respectively. The GaN nanocolumns on Si show an N polarity, while the (Al, Ga)N nanocolumns on an AlN buffer exhibit a Ga polarity. The different polarities of nanocolumns grown in a similar procedure are interpreted in terms of the specific interface bonding configurations. Our investigation contributes to the understanding of polarity control in III-nitride nanocolumn growth.

  2. Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

    Science.gov (United States)

    Butler, Keith T.; McKechnie, Scott; Azarhoosh, Pooya; van Schilfgaarde, Mark; Scanlon, David O.; Walsh, Aron

    2016-03-01

    The ternary V-VI-VII chalcohalides consist of one cation and two anions. Trivalent antimony—with a distinctive 5s2 electronic configuration—can be combined with a chalcogen (e.g., S or Se) and halide (e.g., Br or I) to produce photoactive ferroelectric semiconductors with similarities to the Pb halide perovskites. We report—from relativistic quasi-particle self-consistent GW theory—that these materials have a multi-valley electronic structure with several electron and hole basins close to the band extrema. We predict ionisation potentials of 5.3-5.8 eV from first-principles for the three materials, and assess electrical contacts that will be suitable for achieving photovoltaic action from these unconventional compounds.

  3. Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); McKechnie, Scott; Azarhoosh, Pooya; Schilfgaarde, Mark van [Department of Physics, Kings College London, London WC2R 2LS (United Kingdom); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Global E" 3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2016-03-14

    The ternary V-VI-VII chalcohalides consist of one cation and two anions. Trivalent antimony—with a distinctive 5s{sup 2} electronic configuration—can be combined with a chalcogen (e.g., S or Se) and halide (e.g., Br or I) to produce photoactive ferroelectric semiconductors with similarities to the Pb halide perovskites. We report—from relativistic quasi-particle self-consistent GW theory—that these materials have a multi-valley electronic structure with several electron and hole basins close to the band extrema. We predict ionisation potentials of 5.3–5.8 eV from first-principles for the three materials, and assess electrical contacts that will be suitable for achieving photovoltaic action from these unconventional compounds.

  4. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  5. Critical evaluation of dipolar, acid-base and charge interactions I. Electron displacement within and between molecules, liquids and semiconductors.

    Science.gov (United States)

    Rosenholm, Jarl B

    2017-09-01

    Specific dipolar, acid-base and charge interactions involve electron displacements. For atoms, single bonds and molecules electron displacement is characterized by electronic potential, absolute hardness, electronegativity and electron gap. In addition, dissociation, bonding, atomization, formation, ionization, affinity and lattice enthalpies are required to quantify the electron displacement in solids. Semiconductors are characterized by valence and conduction band energies, electron gaps and average Fermi energies which in turn determine Galvani potentials of the bulk, space charge layer and surface states. Electron displacement due to interaction between (probe) molecules, liquids and solids are characterized by parameters such as Hamaker constant, solubility parameter, exchange energy density, surface tension, work of adhesion and immersion. They are determined from permittivity, refractive index, enthalpy of vaporization, molar volume, surface pressure and contact angle. Moreover, acidic and basic probes may form adducts which are adsorbed on target substrates in order to establish an indirect measure of polarity, acidity, basicity or hydrogen bonding. Acidic acceptor numbers (AN), basic donor numbers (DN), acidic and basic "electrostatic" (E) and "covalent" (C) parameters determined by enthalpy of adduct formation are considered as general acid-base scales. However, the formal grounds for assignments as dispersive, Lifshitz-van der Waals, polar, acid, base and hydrogen bond interactions are inconsistent. Although correlations are found no of the parameters are mutually fully compatible and moreover the enthalpies of acid-base interaction do not correspond to free energies. In this review the foundations of different acid-base parameters relating to electron displacement within and between (probe) molecules, liquids and (semiconducting) solids are thoroughly investigated and their mutual relationships are evaluated. Copyright © 2017 Elsevier B.V. All rights

  6. Ionic and electronic behaviors of earth-abundant semiconductor materials and their applications toward solar energy harvesting

    Science.gov (United States)

    Mayer, Matthew T.

    Semiconductor devices offer promise for efficient conversion of sunlight into other useful forms of energy, in either photovoltaic or photoelectrochemical cell configurations to produce electrical power or chemical energy, respectively. This dissertation examines ionic and electronic phenomena in some candidate semiconductors and seeks to understand their implications toward solar energy conversion applications. First, copper sulfide (Cu2S) was examined as a candidate photovoltaic material. It was discovered that its unique property of cation diffusion allows the room-temperature synthesis of vertically-aligned nanowire arrays, a morphology which facilitates study of the diffusion processes. This diffusivity was found to induce hysteresis in the electronic behavior, leading to the phenomena of resistive switching and negative differential resistance. The Cu2S were then demonstrated as morphological templates for solid-state conversion into different types of heterostructures, including segmented and rod-in-tube morphologies. Near-complete conversion to ZnS, enabled by the out-diffusion of Cu back into the substrate, was also achieved. While the ion diffusion property likely hinders the reliability of Cu 2S in photovoltaic applications, it was shown to enable useful electronic and ionic behaviors. Secondly, iron oxide (Fe2O3, hematite) was examined as a photoanode for photoelectrochemical water splitting. Its energetic limitations toward the water electrolysis reactions were addressed using two approaches aimed at achieving greater photovoltages and thereby improved water splitting efficiencies. In the first, a built-in n-p junction produced an internal field to drive charge separation and generate photovoltage. In the second, Fe 2O3 was deposited onto a smaller band gap material, silicon, to form a device capable of producing enhanced total photovoltage by a dual-absorber Z-scheme mechanism. Both approaches resulted in a cathodic shift of the photocurrent onset

  7. Nanostructure fabrication using electron beam irradiation of organometallic compounds

    CERN Document Server

    Bedson, T R

    2001-01-01

    Nanoelectronics- the quest to fabricate quantum devices- is the motivation for this thesis. The place of nanolithography is discussed amongst conventional microfabrication methods, together with the materials currently employed in lithography. The experimental methods, equipment and new resist materials (films of nanoparticles) are then explored in the work described. A summary of the results obtained by the research is presented, followed by the detailed results in the form of a series of published and submitted papers. A systematic study of the response of ferrocene adsorbed onto graphite at 160K to low energy electron beams, that results in varying behaviour depending on the energy of irradiation, is first described. Following are studies of the characteristics of passivated gold nanoclusters when used as a monolayer negative tone resist in direct electron beam writing. Fabrication of lines with widths as narrow as 26 nm has been achieved. Measurements of the linewidth as a function of electron dose allow ...

  8. Influence of semiconductor-dielectric transition border on the electron states in spherical quantum dots.

    CERN Document Server

    Ghazaryan, E M; Sarkisyan, H A

    2002-01-01

    Electron states in spherical quantum dots are studied, taking into account boundary conditions. The threshold habit of level appearance inside the quantum dots is revealed. The electron energy dependences on the quantum dots radius and confinement potential height

  9. Many-Body Effects on the Electronic and Optical Properties of Quasi-2D Semiconductors

    Science.gov (United States)

    Qiu, Diana

    Quasi-two-dimensional (quasi-2D) semiconductors are the subject of intense research interest as platforms for both developing atomically thin devices and exploring novel physics. These are layered materials with covalent bonding in each layer and weak coupling between layers so that individual layers can be easily peeled off. Changes to confinement and screening in reduced dimensions can lead to drastic changes in quasiparticle (QP) and optical properties when compared with bulk materials. We use the GW and GW-BSE methods to explain and predict the QP and optical properties of quasi-2D semiconductors. We find that quasi-2D materials have diverse, strongly-bound excitons including some with unusual (massless) dispersion. Moreover, we explore the effects of the screening environment on the QP and excitonic properties and find that encapsulation and substrate engineering can tune the QP gap and exciton binding energies by an order of magnitude. This sensitivity allows us to treat screening and confinement as separate degrees of freedom, opening new pathways for engineering the properties of low-dimensional materials. I would like to acknowledge collaborations with members of the Louie group. This work was supported by U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences Engineering Division, and by National Science Foundation.

  10. Electron injection into organic semiconductor devices from high work function cathodes

    OpenAIRE

    Hoven, Corey V.; Yang, Renqiang; Garcia, Andres; Crockett, Victoria; Heeger, Alan J.; Bazan, Guillermo C.; Nguyen, Thuc-Quyen

    2008-01-01

    We show that polymer light-emitting diodes with high work-function cathodes and conjugated polyelectrolyte injection/transport layers exhibit excellent efficiencies despite large electron-injection barriers. Correlation of device response times with structure provides evidence that the electron-injection mechanism involves redistribution of the ions within the polyelectrolyte electron-transport layer and hole accumulation at the interface between the emissive and electron-transport layers. Bo...

  11. Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

    KAUST Repository

    Song, Zhibo

    2017-07-28

    Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

  12. Electronic and thermoelectric properties of nonmagnetic inverse Heusler semiconductors Sc2FeSi and Sc2FeGe

    Science.gov (United States)

    Li, Jie; Yang, Guang; Yang, Yanmin; Ma, Hongran; Zhang, Qiang; Zhang, Zhidong; Fang, Wei; Yin, Fuxing; Li, Jia

    2017-11-01

    The electronic and thermoelectric properties of two nonmagnetic Hg2CuTi-type or called inverse Heusler semiconductors Sc2FeSi and Sc2FeGe are predicted by using first principles calculations and Boltzmann transport theory. The band gaps of Sc2FeSi and Sc2FeGe are 0.54 eV and 0.60 eV, respectively. Their zero total magneticmoments both satisfy the Mt = Zt-18 while not the Mt = Zt-24 rule. The good thermoelectric properties are achieved under the condition of electron doping. At the room temperature 300 K, the peak value of Seebeck coefficient is -592.02 μVK-1 for Sc2FeSi, and -609.38 μVK-1 for Sc2FeGe by electron doping. The maximum power factor is 48.77(1014 μW cm-1 K-2 s-1) for Sc2FeSi and 47.11(1014 μW cm-1 K-2 s-1) for Sc2FeGe with electron doping concentration -2.29 × 1026 m-3 and -2.42 × 1026 m-3, respectively, which are close to the power factor of well-known thermoelectric material Bi2Te3, indicating their potential applying values for thermoelectric devices.

  13. Electronic band-structure calculations of some magnetic chromium compounds

    NARCIS (Netherlands)

    VANBRUGGEN, CF; HAAS, C; DEGROOT, RA

    1989-01-01

    In this paper band-structure calculations of CrS, CrSe, Cr3Se4 and CrSb are presented. Together with our accompanying results for the chromium tellurides, these calculations give a coherent picture of the changes in the electronic structure caused by anion substitution and by introduction of cation

  14. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2001-01-01

    This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced. Examples include recent progress in semiconductor quantum structures such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade and the single-electron transistor.

  15. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  16. Electromagnetic malfunction of semiconductor-type electronic personal dosimeters caused by access control systems for radiation facilities.

    Science.gov (United States)

    Deji, Shizuhiko; Ito, Shigeki; Ariga, Eiji; Mori, Kazuyuki; Hirota, Masahiro; Saze, Takuya; Nishizawa, Kunihide

    2006-08-01

    High frequency electromagnetic fields in the 120 kHz band emitted from card readers for access control systems in radiation control areas cause abnormally high and erroneous indicated dose readings on semiconductor-type electronic personal dosimeters (SEPDs). All SEPDs malfunctioned but recovered their normal performance by resetting after the exposure ceased. The minimum distances required to prevent electromagnetic interference varied from 5.0 to 38.0 cm. The electric and magnetic immunity levels ranged from 35.1 to 267.6 V m(-1) and from 1.0 to 16.6 A m(-1), respectively. Electromagnetic immunity levels of SEPDs should be strengthened from the standpoint of radiation protection.

  17. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    CERN Document Server

    Matsui, J; Yokoyama, K; Takeda, S; Katou, M; Kurihara, H; Watanabe, K; Kagoshima, Y; Kimura, S

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10 sup - sup 5 -10 sup - sup 6. By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO sub 2 /Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.

  18. Dual-channel cathodic electrochemiluminescence of luminol induced by injection of hot electrons on a niobate semiconductor modified electrode.

    Science.gov (United States)

    Xu, Huifeng; Ye, Hongzhi; Zhu, Xi; Liang, Shijing; Guo, Longhua; Lin, Zhenyu; Liu, Xianxiang; Chen, Guonan

    2013-01-07

    In this paper, a new niobate semiconductor photocatalyst Sr(0.4)H(1.2)Nb(2)O(6)·H(2)O (HSN) nanoparticle was applied to investigate the cathodic electrochemiluminescent (ECL) behavior of luminol for the first time. The results presented here demonstrated that there were two ECL peaks of luminol at the cathodic potential attributed to immobilization of HSN on the electrode surface. It is implied that HSN can be electrically excited and injected electrons into aqueous electrolytes from this electrode under a quite low potential that only excites luminol. A mechanism for this luminol-ECL system on HSN/GCE has been proposed. Additionally, this HSN/GCE has lots of advantages, such as high stability, good anti-interference ability, simple instrumentation, rapid procedure and ultrasensitive ECL response. It is envisioned that this HSN/GCE has further applications in biosensors.

  19. Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles

    Science.gov (United States)

    Tvrdy, Kevin; Frantsuzov, Pavel A.; Kamat, Prashant V.

    2011-01-01

    Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO2, TiO2, and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO2) were not the same as those which showed the highest photocurrent (TiO2). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency. PMID:21149685

  20. Electronic Structure and Geometries of Small Compound Metal Clusters

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-04-14

    During the tenure of the DOE grant DE-FG05-87EI145316 we have concentrated on equilibrium geometries, stability, and the electronic structure of transition metal-carbon clusters (met-cars), clusters designed to mimic the chemistry of atoms, and reactivity of homo-nuclear metal clusters and ions with various reactant molecules. It is difficult to describe all the research the authors have accomplished as they have published 38 papers. In this report, they outline briefly the salient features of their work on the following topics: (1) Designer Clusters: Building Blocks for a New Class of Solids; (2) Atomic Structure, Stability, and Electronic Properties of Metallo-Carbohedrenes; (3) Reactivity of Metal Clusters with H{sub 2} and NO; and (4) Anomalous Spectroscopy of Li{sub 4} Clusters.

  1. Level-resolved quantum statistical theory of electron capture into many-electron compound resonances in highly charged ions

    CERN Document Server

    Berengut, J C; Dzuba, V A; Flambaum, V V; Gribakin, G F

    2015-01-01

    The strong mixing of many-electron basis states in excited atoms and ions with open $f$ shells results in very large numbers of complex, chaotic eigenstates that cannot be computed to any degree of accuracy. Describing the processes which involve such states requires the use of a statistical theory. Electron capture into these 'compound resonances' leads to electron-ion recombination rates that are orders of magnitude greater than those of direct, radiative recombination, and cannot be described by standard theories of dielectronic recombination. Previous statistical theories considered this as a two-electron capture process which populates a pair of single-particle orbitals, followed by 'spreading' of the two-electron states into chaotically mixed eigenstates. This method is similar to a configuration-average approach, as it neglects potentially important effects of spectator electrons and conservation of total angular momentum. In this work we develop a statistical theory which considers electron capture in...

  2. Study of the Electronic Surface State of 3 - 5 Compounds

    Science.gov (United States)

    1975-09-15

    collaboration with Walter Harrison and Sal im Ciraci proved most fruitful. Making use of the Bond Orbital Model, a first order calculation was made of the...energy level? associated with sur- 2 face as compared to bulk orbitals . The results were striking. They showed that, because of the difference between...enough so that there is appreciable electron emission from the GaAs below the oxide layer. 11 12 In Fig. 3 we show an EDO for an Op

  3. Soft x-ray intensity profile measurements of electron cyclotron heated plasmas using semiconductor detector arrays in GAMMA 10 tandem mirror

    Energy Technology Data Exchange (ETDEWEB)

    Minami, R., E-mail: minami@prc.tsukuba.ac.jp; Imai, T.; Kariya, T.; Numakura, T.; Eguchi, T.; Kawarasaki, R.; Nakazawa, K.; Kato, T.; Sato, F.; Nanzai, H.; Uehara, M.; Endo, Y.; Ichimura, M. [Plasma Research Center, University of Tsukuba, Tsukuba, Ibaraki 305-8577 (Japan)

    2014-11-15

    Temporally and spatially resolved soft x-ray analyses of electron cyclotron heated plasmas are carried out by using semiconductor detector arrays in the GAMMA 10 tandem mirror. The detector array has 16-channel for the measurements of plasma x-ray profiles so as to make x-ray tomographic reconstructions. The characteristics of the detector array make it possible to obtain spatially resolved plasma electron temperatures down to a few tens eV and investigate various magnetohydrodynamic activities. High power electron cyclotron heating experiment for the central-cell region in GAMMA 10 has been started in order to reduce the electron drag by increasing the electron temperature.

  4. Method of passivating semiconductor surfaces

    Science.gov (United States)

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  5. Influence of electronic properties of naphthalene compounds on contact angles.

    Science.gov (United States)

    Tavana, Hossein; Hair, Michael L; Neumann, A Wilhelm

    2006-01-26

    Contact angles of a homologous series of naphthalene compounds on films of a fluorinated acrylate polymer (EGC-1700) deviate from an ideal pattern of contact angles. The deviations increase with the electronegativity of the constituent atoms of the liquid molecules. The results suggest that an uneven distribution of electrostatic charges over the molecules creates strong dipole moments, giving rise to fairly strong dipole-dipole and dipole-induced dipole interactions between liquid molecules and the EGC-1700 chains, which have large dipole moments. In comparison, contact angles of the same probe liquids on the films of Teflon AF 1600, which have small dipole moments, fall on a smooth curve representing the surface tension of the polymer film.

  6. Alloying effect on the electronic structures of hydrogen storage compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yukawa, H.; Moringa, M.; Takahashi, Y. [Nagoya Univ. (Japan). Dept. of Mater. Sci. and Eng.

    1997-05-20

    The electronic structures of hydrogenated LaNi{sub 5} containing various 3d transition elements were investigated by the DV-X{alpha} molecular orbital method. The hydrogen atom was found to form a strong chemical bond with the Ni rather than the La atoms. The alloying modified the chemical bond strengths between atoms in a small metal octahedron containing a hydrogen atom at the center, resulting in the change in the hydrogen absorption and desorption characteristics of LaNi{sub 5} with alloying. (orig.) 7 refs.

  7. Electric field gradient and electronic properties of crown thioether compounds

    Energy Technology Data Exchange (ETDEWEB)

    Camargo Dalmatti Alves Lima, Filipe, E-mail: flima@if.usp.br; Rodrigues do Nascimento, Rafael; Brown Goncalves, Marcos [Universidade de Sao Paulo, Instituto de Fisica (Brazil); Cottenier, Stefaan [Ghent University, Center for Molecular Modeling (Belgium); Caldas, Marilia Junqueira; Petrilli, Helena Maria [Universidade de Sao Paulo, Instituto de Fisica (Brazil)

    2010-04-15

    We compare published TDPAC experiments on {sup 111}Cd in the crown thioether C{sub 6}H{sub 12}S{sub 3}AgCl with ab-initio electronic structure calculations performed within the framework of the Density Functional Theory using the Projector Augmented Wave method. We conclude from this comparison that the Cd atom at the very moment of the TDPAC experiment is positively charged, and we point out to a methodological difference between reproducing experimental electric-field gradients in molecules versus solid metals.

  8. Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics

    Science.gov (United States)

    Bucella, Sadir G.; Luzio, Alessandro; Gann, Eliot; Thomsen, Lars; McNeill, Christopher R.; Pace, Giuseppina; Perinot, Andrea; Chen, Zhihua; Facchetti, Antonio; Caironi, Mario

    2015-09-01

    High-mobility semiconducting polymers offer the opportunity to develop flexible and large-area electronics for several applications, including wearable, portable and distributed sensors, monitoring and actuating devices. An enabler of this technology is a scalable printing process achieving uniform electrical performances over large area. As opposed to the deposition of highly crystalline films, orientational alignment of polymer chains, albeit commonly achieved by non-scalable/slow bulk alignment schemes, is a more robust approach towards large-area electronics. By combining pre-aggregating solvents for formulating the semiconductor and by adopting a room temperature wired bar-coating technique, here we demonstrate the fast deposition of submonolayers and nanostructured films of a model electron-transporting polymer. Our approach enables directional self-assembling of polymer chains exhibiting large transport anisotropy and a mobility up to 6.4 cm2 V-1 s-1, allowing very simple device architectures to operate at 3.3 MHz. Thus, the proposed deposition strategy is exceptionally promising for mass manufacturing of high-performance polymer circuits.

  9. Access to long-term optical memories using photon echoes retrieved from electron spins in semiconductor quantum wells

    Science.gov (United States)

    Poltavtsev, S. V.; Langer, L.; Yugova, I. A.; Salewski, M.; Kapitonov, Y. V.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2016-10-01

    We use spontaneous (two-pulse) and stimulated (three-pulse) photon echoes for studying the coherent evolution of optically excited ensemble of trions which are localized in semiconductor CdTe/CdMgTe quantum well. Application of transverse magnetic field leads to the Larmor precession of the resident electron spins, which shuffles optically induced polarization between optically accessible and inaccessible states. This results in several spectacular phenomena. First, magnetic field induces oscillations of spontaneous photon echo amplitude. Second, in three-pulse excitation scheme, the photon echo decay is extended by several orders of magnitude. In this study, short-lived optical excitation which is created by the first pulse is coherently transferred into a long-lived electron spin state using the second optical pulse. This coherent spin state of electron ensemble persists much longer than any optical excitation in the system, preserving information on initial optical field, which can be retrieved as a photon echo by means of third optical pulse.

  10. Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films

    NARCIS (Netherlands)

    Yaffe, O.; Scheres, L.M.W.; Reddy Puniredd, S.; Stein, N.; Biller, A.; Har Lavan, R.; Shpaisman, H.; Zuilhof, H.; Haick, H.; Cahen, D.; Vilan, A.

    2009-01-01

    Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via

  11. Determining binding energies of valence-band electrons in insulators and semiconductors via lanthanide spectroscopy

    NARCIS (Netherlands)

    Dorenbos, P.

    2013-01-01

    Models and methods to determine the absolute binding energy of 4f-shell electrons in lanthanide dopants will be combined with data on the energy of electron transfer from the valence band to a lanthanide dopant. This work will show that it provides a powerful tool to determine the absolute binding

  12. Ab-initio investigation of structural, electronic and optical properties for three phases of ZnO compound

    Energy Technology Data Exchange (ETDEWEB)

    Charifi, Z.; Baaziz, H. [Physics Department, Faculty of Science and Engineering, University of M' sila, 28000 M' sila (Algeria); Hussain Reshak, Ali [Institute of Physical Biology, South Bohemia University, Institute of System Biology and Ecology, Academy of Sciences, Nove Hrady 37333 (Czech Republic)

    2007-09-15

    The complex density-functional theory (DFT) calculations of structural, electronic and optical properties for the three phases: wurtzite (B4), zincblende (B3) and rocksalt (B1) of ZnO compound have been reported using the full-potential linearized-augmented plane-wave (FP-LAPW) method as implemented in the WIEN2k code. We employed both the local-density approximation (LDA) and the generalized-gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy. Also, we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band-structure calculations. The 3d orbitals of the Zn atom were treated as the valence band. The calculated structural properties (equilibrium lattice constant, bulk modulus, etc.) of the wurtzite and rocksalt phases are in good agreement with experiment. The B4 structure of ZnO is found to transform to the B1 structure with a large volume collapse of about 17%. The phase transition pressure obtained by using LDA is about 9.93 in good agreement with the experimental data. B1-ZnO is shown to be an indirect bandgap semiconductor with a bandgap of 1.47 eV, which is significantly smaller than the experimental value (2.45{+-}0.15 eV). While B3 and B1 phases have direct bandgap semiconductors with bandgaps 1.46 and 1.57 eV, respectively. Also, we have presented the results of the effective masses. We present calculations of the frequency-dependent complex dielectric function {epsilon}({omega}) and it zero-frequency limit {epsilon}{sub 1}(0). The optical properties of B4 phase show considerable anisotropic between the two components. The reflectivity spectra has been calculated and compared with the available experimental data. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Electron - polar acoustical phonon interactions in nitride based diluted magnetic semiconductor quantum well via hot electron magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Pandya, Ankur, E-mail: ankur.pandya@nirmauni.ac.in [Institute of Technology, Nirma University, Ahmedabad-382481 (India); Shinde, Satyam, E-mail: satyamshinde@yahoo.com [School of Technology, Pandit Din Dayal Petroleum University, Gandhinagar-382007 (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M.S.University of Baroda, Vadodara-390002 (India)

    2015-05-15

    In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering.

  14. Efficient, Broadband and Wide-Angle Hot-Electron Transduction using Metal-Semiconductor Hyperbolic Metamaterials

    KAUST Repository

    Sakhdari, Maryam

    2016-05-20

    Hot-electron devices are emerging as promising candidates for the transduction of optical radiation into electrical current, as they enable photodetection and solar/infrared energy harvesting at sub-bandgap wavelengths. Nevertheless, poor photoconversion quantum yields and low bandwidth pose fundamental challenge to fascinating applications of hot-electron optoelectronics. Based on a novel hyperbolic metamaterial (HMM) structure, we theoretically propose a vertically-integrated hot-electron device that can efficiently couple plasmonic excitations into electron flows, with an external quantum efficiency approaching the physical limit. Further, this metamaterial-based device can have a broadband and omnidirectional response at infrared and visible wavelengths. We believe that these findings may shed some light on designing practical devices for energy-efficient photodetection and energy harvesting beyond the bandgap spectral limit.

  15. Electron Injection into Organic Semiconductor Devices from High Work Function Cathodes

    National Research Council Canada - National Science Library

    Corey V. Hoven; Renqiang Yang; Andres Garcia; Victoria Crockett; Alan J. Heeger; Guillermo C. Bazan; Thuc-Quyen Nguyen

    2008-01-01

    We show that polymer light-emitting diodes with high work-function cathodes and conjugated polyelectrolyte injection/transport layers exhibit excellent efficiencies despite large electron-injection barriers...

  16. Electron beam synthesis of metal and semiconductor nanoparticles using metal-organic frameworks as ordered precursors

    Science.gov (United States)

    Jacobs, Benjamin W.; Houk, Ronald J. T.; Wong, Bryan M.; Talin, A. Alec; Allendorf, Mark D.

    2011-09-01

    We demonstrate a versatile, bottom-up method of forming metal and semiconducting nanoparticles by exposing precursor metal-organic frameworks (MOFs) to an electron beam. Using a transmission electron microscope to initiate and observe growth, we show that the composition, size, and morphology of the nanoparticles are determined by the chemistry and structure of the MOF, as well as the electron beam properties. Zinc oxide, metallic indium and copper particles were produced with narrow and tunable size distributions comparable to those obtained from state-of-the-art methods. This method represents a first step toward the fabrication of nanoscale heterostructures using the highly controlled environment of the MOF pores as a scaffold or template.

  17. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures

    Science.gov (United States)

    2015-05-01

    5.33 eV, suitable for studying GaN with generated electron-hole pairs up to 1020 cm−3. ...............................12 Fig. 4 Calculated time...studying GaN with generated electron-hole pairs up to 1020 cm−3. 2.4 Results and Discussion for the Gallium Nitride (GaN) Case In this section we...14. Chen P, Piermarocchi C, Sham LJ, Gammon D, Steel DG. Phys Rev A. 2004;69:075320. 15. Economou SE, Reinecke TL. Phys Rev Lett. 2007;99:217401

  18. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  19. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    Science.gov (United States)

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  20. Probing Electron-Phonon Interaction through Two-Photon Interference in Resonantly Driven Semiconductor Quantum Dots

    DEFF Research Database (Denmark)

    Reigue, Antoine; Iles-Smith, Jake; Lux, Fabian

    2017-01-01

    We investigate the temperature dependence of photon coherence properties through two-photon interference (TPI) measurements from a single quantum dot (QD) under resonant excitation. We show that the loss of indistinguishability is related only to the electron-phonon coupling and is not affected...

  1. Experiments on Novel Phases of 2D Electrons in Advanced Semiconductor Structures

    National Research Council Canada - National Science Library

    Tsui, Daniel C

    2008-01-01

    ...) the skyrmion crystal to Wigner crystal cross-over. In addition we have successfully constructed a mechanical rotator to tilt the 2D electron sample which is mounted in the 10GHz microwave probe at 35 mK in a 45T magnet...

  2. The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode

    Energy Technology Data Exchange (ETDEWEB)

    Kuwahara, Makoto, E-mail: kuwahara@imass.nagoya-u.ac.jp; Ujihara, Toru; Saitoh, Koh [Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603 (Japan); Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); Nambo, Yoshito; Aoki, Kota; Sameshima, Kensuke; Asano, Hidefumi [Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); Jin, Xiuguang [High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Takeda, Yoshikazu [Aichi Synchrotron Radiation Center, Seto 489-0965 (Japan); Nagoya Industrial Science Research Institute, Nagoya 460-0008 (Japan); Tanaka, Nobuo [Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603 (Japan)

    2016-07-04

    The space charge effect has been clearly observed in the energy distributions of picosecond pulse beams from a spin-polarized electron microscope, and was found to depend upon the quantity of charge per pulse. The non-linear phenomena associated with this effect have also been replicated in beam simulations that take into account of a three-dimensional space charge. The results show that a charge of 500 aC/pulse provides the highest brightness with a 16-ps pulse duration, a 30-keV beam energy, and an emission spot of 1.8 μm. Furthermore, the degeneracy of the wave packet of the pulsed electron beam has been evaluated to be 1.6 × 10{sup −5} with a charge of 100 aC/pulse, which is higher than that for a continuously emitted electron beam despite the low beam energy of 30 keV. The high degeneracy and high brightness contribute to the realization of high temporal and energy resolutions in low-voltage electron microscopy, which will serve to reduce radiolysis damage and enhance scattering contrast.

  3. Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes

    Science.gov (United States)

    Rodionov, A. A.; Golyashov, V. A.; Chistokhin, I. B.; Jaroshevich, A. S.; Derebezov, I. A.; Haisler, V. A.; Shamirzaev, T. S.; Marakhovka, I. I.; Kopotilov, A. V.; Kislykh, N. V.; Mironov, A. V.; Aksenov, V. V.; Tereshchenko, O. E.

    2017-09-01

    The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400-900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20-300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.

  4. MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility

    Energy Technology Data Exchange (ETDEWEB)

    Furuya, K [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan); Machida, N [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan); Igarashi, M [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan); Nakagawa, R [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan); Kashima, I [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan); Ishida, M [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan); Miyamoto, Y [Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguroku, Tokyo, 152-8552 (Japan)

    2006-05-15

    Ultrafast operation of a transistor using ballistic electron concepts and its fabrication feasibility are shown by Monte Carlo simulation and experiment, respectively. The transistor consists of InP/GaInAs heterojunction launcher of 20 nm-width and a subsequent propagation layer of 80 nm-length intrinsic GaInAs. Schottky metal gates attached on both sides of the propagation layer are biased in the forward direction so that potential barriers at Schottky junctions are flattened and hot electrons are extracted from the launcher. Hot electron velocity is as fast as 7-8 x 10{sup 7} cm/s through the whole propagation layer. From stationary and step-response simulations, the cutoff frequency is higher than one THz. The emitter charging and the transit times are discussed to confirm the simulation. Finally, fabrication and operation of the transistor with 25 nm-width emitter using GaInAs/InP organo-metallic vapor phase epitaxy, electron-beam lithography, ultrafine process are demonstrated.

  5. Investigation of the abnormal Zn diffusion phenomenon in III-V compound semiconductors induced by the surface self-diffusion of matrix atoms

    Science.gov (United States)

    Tang, Liangliang; Xu, Chang; Liu, Zhuming

    2017-01-01

    Zn diffusion in III-V compound semiconductorsare commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically undergroup III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except InAs. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

  6. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  7. Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature

    KAUST Repository

    Tizei, Luiz H. G.

    2016-04-21

    We have explored the benefits of performing monochromated Electron Energy Loss Spectroscopy(EELS) in samples at cryogenic temperatures. As an example, we have observed the excitonic absorption peaks in single layer Transition Metal Dichalcogenides. These peaks appear separated by small energies due to spin orbit coupling. We have been able to distinguish the split for MoS2 below 300 K and for MoSe2 below 220 K. However, the distinction between peaks is only clear at 150 K. We have measured the change in absorption threshold between 150 K and 770 K for MoS2 and MoSe2. We discuss the effect of carbon and ice contamination in EELSspectra. The increased spectral resolution available made possible with modern monochromators in electron microscopes will require the development of stable sample holders which reaches temperatures far below that of liquid nitrogen.

  8. First Principles Calculations of Electronic and Thermal Properties of AIRE (RE = La, Ce and Pr) Compounds

    Science.gov (United States)

    Srivastava, Vipul; Aynyas, M.; Rajagopalan, M.; Sanyal, S. P.

    2008-04-01

    Electronic properties of non-magnetic cubic B2-type AIRE (RE = La, Ce and Pr) compounds have been derived from self-consistent tight binding linear muffin tin orbital method at ambient pressure. These compounds show metallic behaviour under ambient conditions. While thermal properties like Debye temperature and Grüneisen constant are calculated at T = 0 K within the Debye-Grüneisen model and compared with the others theoretical results. We have also performed a pressure induced variation of Debye temperature. We have found a decrease in Debye temperature around 40 kbar in all the AIRE compounds.

  9. Chalcopyrite Magnetic Semiconductors: An Ab-Initio Study of Their Structural, Electronic and Magnetic Properties

    Science.gov (United States)

    2001-04-01

    STRUCTURAL, ELECTRONIC AND MAGNETIC PROPERTIES S. PICOZZIt, A. CONTINENZAf, W. T. GENG§, Y. J. ZHAO5 and A. J. FREEMANW t INFM - Dip. Fisica , Univ...U.S.A.) ABSTRACT Stimulated by recent experimental observations of room temperature ferromagnetism of MnCdi_-GeP 2, we investigate the structural...alignment is the most stable ordering for all the systems studied, at variance with that experimentally reported. Moreover, we find that there is a

  10. Remotion of organic compounds of actual industrial effluents by electron beam irradiation

    Science.gov (United States)

    Sampa, M. H. O.; Duarte, C. L.; Rela, P. R.; Somessari, E. S. R.; Silveira, C. G.; Azevedo, A. L.

    1998-06-01

    Organic compounds has been a great problem of environmental pollution, the traditional methods are not effecient on removing these compounds and most of them are deposited to ambient and stay there for long time causing problems to the environment. Ionizing radiation has been used with success to destroy organic molecules. Actual industrial effluents were irradiated using IPEN's electron beam wastewater pilot plant to study organic compounds degradation. The samples were irradiated with and without air mixture by different doses. Irradiation treatment efficiency was evaluated by the Cromatography Gas Analyses of the samples before and after irradiation. The studied organic compounds were: phenol, chloroform, tetrachloroethylene (PCE), carbon tetrachloride, trichloroethylene (TCE), 1,1-dichloroethane, dichloromethane, benzene, toluene and xilene. A degradation superior to 80% was achieved for the majority of the compounds with air addition and 2kGy delivered dose condition. For the samples that were irradiated without air addition the degradation was higher.

  11. Remotion of organic compounds of actual industrial effluents by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sampa, M.H.O.; Duarte, C.L.; Rela, P.R.; Somessari, E.S.R.; Silveira, C.G.; Azevedo, A.L

    1998-06-01

    Organic compounds has been a great problem of environmental pollution, the traditional methods are not efficient on removing these compounds and most of them are deposited to ambient and stay there for long time causing problems to the environment. Ionizing radiation has been used with success to destroy organic molecules. Actual industrial effluents were irradiated using IPEN's electron beam wastewater pilot plant to study organic compounds degradation. The samples were irradiated with and without air mixture by different doses. Irradiation treatment efficiency was evaluated by the Cromatography Gas Analyses of the samples before and after irradiation. The studied organic compounds were: phenol, chloroform, tetrachloroethylene (PCE), carbon tetrachloride, trichloroethylene (TCE), 1,1-dichloroethane, dichloromethane, benzene, toluene and xilene. A degradation superior to 80% was achieved for the majority of the compounds with air addition and 2kGy delivered dose condition. For the samples that were irradiated without air addition the degradation was higher.

  12. Sample preparation for precise and quantitative electron holographic analysis of semiconductor devices.

    Science.gov (United States)

    Han, Myung-Geun; Li, Jing; Xie, Qianghua; Fejes, Peter; Conner, James; Taylor, Bill; McCartney, Martha R

    2006-08-01

    Wedge polishing was used to prepare one-dimensional Si n-p junction and Si p-channel metal-oxide-silicon field effect transistor (pMOSFET) samples for precise and quantitative electrostatic potential analysis using off-axis electron holography. To avoid artifacts associated with ion milling, cloth polishing with 0.02-microm colloidal silica suspension was used for final thinning. Uniform thickness and no significant charging were observed by electron holography analysis for samples prepared entirely by this method. The effect of sample thickness was investigated and the minimum thickness for reliable results was found to be approximately 160 nm. Below this thickness, measured phase changes were smaller than expected. For the pMOSFET sample, quantitative analysis of two-dimensional electrostatic potential distribution showed that the metallurgical gate length (separation between two extension junctions) was approximately 54 nm, whereas the actual gate length was measured to be approximately 70 nm by conventional transmission electron microscopy. Thus, source and drain junction encroachment under the gate was 16 nm.

  13. Radiation damage to alkyl chain monolayers on semiconductor substrates investigated by electron spectroscopy.

    Science.gov (United States)

    Amy, Fabrice; Chan, Calvin K; Zhao, Wei; Hyung, Jaehyung; Ono, Masaki; Sueyoshi, Tomoki; Kera, Satoshi; Nesher, Guy; Salomon, Adi; Segev, Lior; Seitz, Oliver; Shpaisman, Hagay; Schöll, Achim; Haeming, Marc; Böcking, Till; Cahen, David; Kronik, Leeor; Ueno, Nobuo; Umbach, Eberhard; Kahn, Antoine

    2006-11-02

    Monolayers of alkyl chains, attached through direct Si-C bonds to Si(111), via phosphonates to GaAs(100) surfaces, or deposited as alkyl-silane monolayers on SiO2, are investigated by ultraviolet and inverse photoemission spectroscopy and X-ray absorption spectroscopy. Exposure to ultraviolet radiation from a He discharge lamp, or to a beam of energetic electrons, leads to significant damage, presumably associated with radiation- or electron-induced H-abstraction leading to carbon-carbon double-bond formation in the alkyl monolayer. The damage results in an overall distortion of the valence spectrum, in the appearance of (occupied) states above the highest occupied molecular orbital of the alkyl molecule, and in a characteristic (unoccupied state) pi resonance at the edge of the carbon absorption peak. These distortions present a serious challenge for the interpretation of the electronic structure of the monolayer system. We show that extrapolation to zero damage at short exposure times eliminates extrinsic features and allows a meaningful extraction of the density of state of the pristine monolayer from spectroscopy measurements.

  14. Electronic and Thermoelectric Properties of Ternary Chalcohalide Semiconductors: First Principles Study

    Science.gov (United States)

    Khan, Wilayat; Hussain, Sajjad; Minar, Jan; Azam, Sikander

    2018-02-01

    Ternary chalcohalides have been widely utilized for different device applications. The thermoelectric properties of SbSI, SbSeI and SbSBr have been investigated by theoretical simulations, and the findings have been performed using BoltzTraP code, based on semi-classical Boltzmann transport theory. In this study, we simulated the electronic structures using the Englo-Vosko generalized gradient approximation employed in the WIEN2k program. From the electronic band structures, we found a combination of light and heavy bands around the Fermi level in the valence band, which strongly affect the effective masses of the carriers. The entire thermoelectric parameters, like the electrical, the electronic part of the thermal conductivities, the Seebeck coefficient and the power factor have been analysed as functions of temperature and chemical potential. The correlation between the effective masses and the thermoelectric properties is also included in the discussion because the effective mass reveals the mobility of the carriers which in turn affect the thermoelectric properties. The substitution of sulfur reveals high electrical conductivity and a smaller Seebeck coefficient based on effective mass leads to the increase in the power factor.

  15. Rubbery electronics and sensors from intrinsically stretchable elastomeric composites of semiconductors and conductors.

    Science.gov (United States)

    Kim, Hae-Jin; Sim, Kyoseung; Thukral, Anish; Yu, Cunjiang

    2017-09-01

    A general strategy to impart mechanical stretchability to stretchable electronics involves engineering materials into special architectures to accommodate or eliminate the mechanical strain in nonstretchable electronic materials while stretched. We introduce an all solution-processed type of electronics and sensors that are rubbery and intrinsically stretchable as an outcome from all the elastomeric materials in percolated composite formats with P3HT-NFs [poly(3-hexylthiophene-2,5-diyl) nanofibrils] and AuNP-AgNW (Au nanoparticles with conformally coated silver nanowires) in PDMS (polydimethylsiloxane). The fabricated thin-film transistors retain their electrical performances by more than 55% upon 50% stretching and exhibit one of the highest P3HT-based field-effect mobilities of 1.4 cm2/V∙s, owing to crystallinity improvement. Rubbery sensors, which include strain, pressure, and temperature sensors, show reliable sensing capabilities and are exploited as smart skins that enable gesture translation for sign language alphabet and haptic sensing for robotics to illustrate one of the applications of the sensors.

  16. Effect of picosecond magnetic pulse on dynamics of electron's subbands in semiconductor bilayer nanowire

    Science.gov (United States)

    Chwiej, T.

    2017-10-01

    We report on possibility of charge current generation in nanowire made of two tunnel coupled one-dimensional electron waveguides by means of single magnetic pulse lasting up to 20 ps. Existence of interlayer tunnel coupling plays a crucial role in the effect described here as it allows for hybridization of the wave functions localized in different layers which can be dynamically modified by applying a time changeable in-plane magnetic field. Results of time-dependent DFT calculations performed for a bilayer nanowire confining many electrons show that the effect of such magnetic hybridization relies on tilting of electrons' energy subbands, to the left or to the right, depending on a sign of time derivative of oscillating magnetic field due to the Faraday law. Consequently, the tilted subbands become a source of charge flow along the wire. Strength of such magneto-induced current oscillations may achieve even 0.6 μA but it depends on duration of magnetic pulse as well as on charge density confined in nanowire which has to be unequally distributed between both transport layers to observe this effect.

  17. Monte Carlo analysis of electronic noise in semiconductors under sub-terahertz cyclostationary mixed fields

    Energy Technology Data Exchange (ETDEWEB)

    Capizzo, M.C.; Persano Adorno, D.; Zarcone, M. [Dipartimento di Fisica e Tecnologie Relative, Viale delle Scienze, Ed. 18, 90128, Palermo (Italy)

    2006-08-15

    This paper reports the results of Monte Carlo simulations of electronic noise in a GaAs bulk driven by two mixed high-frequency large-amplitude periodic electric fields. Under these conditions, the system response shows some peculiarities in the noise performance, such as a resonant-like enhancement of the spectra near the two frequencies of the applied fields. The relations among the frequency response and the velocity fluctuations as a function of intensities and frequencies of the sub-terahertz mixed excitation fields have been investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Observation of standing waves of electron-hole sound in a photoexcited semiconductor.

    Science.gov (United States)

    Padmanabhan, P; Young, S M; Henstridge, M; Bhowmick, S; Bhattacharya, P K; Merlin, R

    2014-07-11

    Three-dimensional multicomponent plasmas composed of species with very different masses support a new branch of charge-density fluctuations known as acoustic plasmons. Here, we report on an ultrafast optical method to generate and probe coherent states of acoustic plasmons in a slab of GaAs, which relies on strong photoexcitation to create a large population of light electrons and heavy holes. Consistent with the random-phase-approximation theory, the data reveal standing plasma waves confined to these slabs, similar to those of conventional sound but with associated velocities that are significantly larger.

  19. Photoinduced electron-transfer from imidazole derivative to nano-semiconductors.

    Science.gov (United States)

    Karunakaran, C; Jayabharathi, J; Jayamoorthy, K; Devi, K Brindha

    2012-04-01

    Bioactive imidazole derivative absorbs in the UV region at 305 nm. The interaction of imidazole derivative with nanoparticulate WO3, Fe2O3, Fe3O4, CuO, ZrO2 and Al2O3 has been studied by UV-visible absorption, FT-IR and fluorescence spectroscopies. The imidazole derivative adsorbs strongly on the surfaces of nanosemiconductor, the apparent binding constants for the association between nanomaterials and imidazole derivative have been determined from the fluorescence quenching. In the case of nanocrystalline insulator, fluorescence quenching through electron transfer from the excited state of the imidazole derivative to alumina is not possible. However, a possible mechanism for the quenching of fluorescence by the insulator is energy transfer, that is, energy transferred from the organic molecule to the alumina lattice. Based on Forster's non-radiation energy transfer theory, the distance between the imidazole derivative and nanoparticles (r0∼2.00 nm) as well as the critical energy transfer distance (R0∼1.70 nm) has been calculated. The interaction between the imidazole derivative and nanosurfaces occurs through static quenching mechanism. The free energy change (ΔGet) for electron transfer process has been calculated by applying Rehm-Weller equation. Copyright © 2012 Elsevier B.V. All rights reserved.

  20. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  1. Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Obernhuber, S.

    2007-04-15

    For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

  2. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    Full Text Available Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

  3. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  4. Compound

    Indian Academy of Sciences (India)

    UV-vis spectra showing solvent effects on compounds (6). Figure S4. UV-vis spectra showing solvent effects on compounds (9). Figure S5. UV-vis spectra showing solvent ___, acidic--- and basic -□- effects on compound (8) in CH2Cl2 solution. Table S1. 1H and 13C NMR spectral data of salicylaldimine Schiff bases (5-8).

  5. Programme and Abstracts. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (1st) Held in Ecole Centrale De Lyon, France on 19 -22 May 1992. (EXAMTEC’ 92)

    Science.gov (United States)

    1992-05-22

    crystallographic and chemical inhomogeneities are inherently formed during buik growth of III-V compound semiconductors. A classification of the different...Garawal, D. Lancefield , J.P. Piel, R. Blunt; EMRS Symposium D, Strasbourg (Nov. 90), to be published /5/ H.W. Dinges, H. Burkhard, R. L~sch, H

  6. Passivating ligand and solvent contributions to the electronic properties of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, S.; Crotty, A.; Kilina, S.; Ivanov, I.; Tretiak, S

    2012-01-01

    We examine in detail the impact of passivating ligands (i.e., amines, phosphines, phosphine oxides and pyridines) on the electronic and optical spectra of Cd{sub 33}Se{sub 33} quantum dots (QDs) using density functional theory (DFT) and time-dependent DFT (TDDFT) quantum-chemical methodologies. Most ligand orbitals are found deep inside in the valence and conduction bands of the QD, with pyridine being an exception by introducing new states close to the conduction band edge. Importantly, all ligands contribute states which are highly delocalized over both the QD surface and ligands, forming hybridized orbitals rather than ligand-localized trap states. In contrast, the states close to the band gap are delocalized over the QD atoms only and define the lower energy absorption spectra. The random detachment of one of ligands from the QD surface results in the appearance of a highly localized unoccupied state inside the energy gap of the QD. Such changes in the electronic structure are correlated with the respective QD-ligand binding energy and steric ligand-ligand interactions. Polar solvent significantly reduces both effects leading to delocalization and stabilization of the surface states. Thus, trap and surface states are substantially eliminated by the solvent. Polar solvent also blue-shifts (e.g., 0.3-0.4 eV in acetonitrile) the calculated absorption spectra. This shift increases with an increase of the dielectric constant of the solvent. We also found that the approximate single-particle Kohn-Sham (KS) approach is adequate for calculating the absorption spectra of the ligated QDs. Besides a systematic blue-shift, the KS spectra are in very good agreement with their respective counterparts calculated with the more accurate TDDFT method.

  7. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  8. Structural, electronic and elastic properties of REIr2 (RE=La and Ce) Laves phase compounds

    Science.gov (United States)

    Shrivastava, Deepika; Fatima, Bushra; Sanyal, Sankar P.

    2016-05-01

    REIr2 (RE = La and Ce) Laves phase intermetallic compounds were investigated with respect to their structural, electronic and elastic properties using full potential linearized augmented plane wave (FP-LAPW) method within generalized gradient approximation (GGA) as implemented in WIEN2k code. The ground state properties such as lattice constants (a0), bulk modulus (B), pressure derivative of bulk modulus (Bꞌ) and density of state at Fermi level N(EF) have been obtained by optimization method. The electronic structure (BS, TDOS and PDOS) reveals that these Laves phase compounds are metallic in nature. The calculated elastic constants indicate that these compounds are mechanically stable at ambient pressure and found to be ductile in nature.

  9. Magnetic and electronic transport properties of Pr5Ge4 compound

    Science.gov (United States)

    Yang, H. F.; Rao, G. H.; Liu, G. Y.; Ouyang, Z. W.; Feng, X. M.; Liu, W. F.; Chu, W. G.; Liang, J. K.

    2003-07-01

    The magnetic and electronic transport properties of the compound Pr5Ge4 were investigated by means of magnetic and electrical resistivity measurements. The results indicate that for the compound Pr5Ge4 there are two magnetic transitions at TIC = 25 K and TIIC = 41 K in a low field of 500 Oe. In analogy to Nd5Ge4 compound, the magnetic structure of Pr5Ge4 may be a canted one, which can be induced by a competition between nearest-neighbor Pr-Pr ferromagnetic (FM) and Pr-Pr antiferromagnetic (AFM) exchange interactions. The main contribution to the electrical resistivity of Pr5Ge4 is the scattering of conduction electrons on localized magnetic moments. A large magnetoresistance (ρ/ρ) was observed (about 25% at 24 K and 15% at 40 K) in the presence of a magnetic field of 50 kOe.

  10. Structure-property relationship of compounds with pyrite and shandite structure with metal-semiconductor transition in InSnCo{sub 3}S{sub 2}; Struktur-Eigenschafts-Beziehungen von Verbindungen mit Pyrit- und Shanditstruktur mit Metall-Halbleiter-Uebergang in InSnCo{sub 3}S{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Rothballer, Jan

    2014-12-23

    The aim of this Ph.D thesis is to correlate theoretical calculations and experimental data to understand the building and stabilities of structures to influence the properties due to applications. Properties of compounds are defined by their electronic structures. The electronic structure can be influenced by substitution of elements or even doping. As a matter of fact, electronic design is a basic principle in materials research. It can help to change or switch the electric conductivity or the magnetism of a starting compound. I analyzed compounds with pyrite-type structure and Sn{sub 2}Co{sub 3}S{sub 2} and related compounds to these. Its electronic as well as its crystallographic structure is highly flexible and Sn{sub 2}Co{sub 3}S{sub 2} is a half metallic ferromagnet. By substituting In to Sn one gets a semiconductor due to indium-tin ordering. By doping sulfur against selenium, the magnetism is highly influenced. To verify and to understand these effects I did magnetic, XRD, neutron and conductivity measurements as well as DFT calculations in direct and reciprocal space.

  11. Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials

    Energy Technology Data Exchange (ETDEWEB)

    Kaindl, Robert A.; Averitt, Richard D.

    2006-11-14

    Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale

  12. Organic-inorganic semiconductor hybrid systems. Structure, morphology, and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    El Helou, Mira

    2012-08-22

    This dissertation addresses the preparation and characterization of hybrid semiconducting systems combining organic with inorganic materials. Characterization methods used included to determine the structure, morphology, and thermal stability comprised X-ray diffraction (XRD), atomic force microscopy (AFM), thermal desorption spectroscopy (TDS), and X-ray photoelectron spectroscopy (XPS). One organic-inorganic semiconducting system was pentacene (C{sub 22}H{sub 14}) and zinc oxide. This interface was investigated in detail for pentacene on an oxygen-terminated zinc oxide surface, i.e. ZnO(000 anti 1). An extended study on the promising p-n junction was carried out for pentacene on ZnO with different orientations which exhibit different chemical and structural characteristics: ZnO(000 anti 1), ZnO(0001), and ZnO(10 anti 10). Moreover, the organic crystal structure of pentacene was selectively tuned by carefully choosing the substrate temperature. This defined interface with a physisorbed pentacene layer on ZnO was characterized by optical absorption which depends on the temperature of the measured system, the pentacene film thickness, and the molecular orientation and packing. The high quality of the pentacene films allowed in one case to characterize the Davydov splitting by linear polarized light focused on a single crystallite. Another subject in the field of organic-inorganic hybrid materials comprised conjugated dithiols used as self-assembled monolayers (SAMs) for immobilizing semiconducting CdS nanoparticles (NPs) on Au substrates. It was demonstrated that an appropriate selection and preparation of the conjugated SAMs is crucial for building up a light-addressable potentiometric sensor with a sufficient efficiency. An optimized electron transfer was achieved with SAMs of long range ordering, high stability, and adequate conductivity. This was examined for different linkers and was best for stilbenedithiol immobilized in solution at higher temperatures. Due

  13. Electronic properties and chemistry of metal / organic semiconductor/ S-GaAs(100) heterosructures

    Energy Technology Data Exchange (ETDEWEB)

    Gavrila, G.N.

    2005-10-21

    in the framework of this thesis three perylene derivates are applied as interlayers in metal/organic layer/S-GaAs(100) heterostructures. The aim of this thesis is to prove the influence of different chemical end-groups on the electronic and chemical properties of the interfaces, as well as the molecular orientation in the organic layers. The molecules 3,4,9,10-perylene tetracarbonic acid dianhydride (PTCDA), 3,4,9,10-perylene tetracarbonic acid diimide (PTCDI), and dimethyl-3,4,9,10-perylene tetracarbonic acid diimide (DiMe-PTCDI) were evaporated by organic molecular beam deposition (OMBD) in the ultrahigh vacuum on sulfur-passivated GaAs(001):2 x 1 substrates. Surface-sensitive characterization procedures as photoemission spectroscopy (PES), inverse photoemission spectroscopy (IPES), and near-edge X-ray fine-structure measurements (NEXAFS) were applied for the characterization. Theoretical calculations by means of the density-functional methods were performed, in order to allow an assignment of different components in core-level spectra. The NEXAFS spectra allow a precise determination of the molecule orientation in relation to the substrate. So it can be proved that a small change of chemical end-groups for instance in DiMe-PTCDI compared with PTCDI causes a dramatic change of the molecule orientation. The valence-band spectra of DiMe-PTCDI show an energetic dispersion of 0.2 eV, which can be assigned to a {pi}-orbital overlap and covers the formation of valence bands. The energy-level fitting to the organic-layer/S-GaAs interface as well as the transport band gap of PTCDI, DiMe-PTCDI, and PTCDA were deteminde by means of PES and IPES. The electronic, chemical, and structural properties of metal/organic-layer interfaces were studied by means of core-level spectroscopy and NEXAFS. Mg reacts strongly with the end-groups of PTCDA AND ptcdi, while the In atoms contribute to a charge-transfer process with the perylene cores of all three molecules, whereby the

  14. Probing Electron-Phonon Interaction through Two-Photon Interference in Resonantly Driven Semiconductor Quantum Dots.

    Science.gov (United States)

    Reigue, Antoine; Iles-Smith, Jake; Lux, Fabian; Monniello, Léonard; Bernard, Mathieu; Margaillan, Florent; Lemaitre, Aristide; Martinez, Anthony; McCutcheon, Dara P S; Mørk, Jesper; Hostein, Richard; Voliotis, Valia

    2017-06-09

    We investigate the temperature dependence of photon coherence properties through two-photon interference (TPI) measurements from a single quantum dot (QD) under resonant excitation. We show that the loss of indistinguishability is related only to the electron-phonon coupling and is not affected by spectral diffusion. Through these measurements and a complementary microscopic theory, we identify two independent separate decoherence processes, both of which are associated with phonons. Below 10 K, we find that the relaxation of the vibrational lattice is the dominant contribution to the loss of TPI visibility. This process is non-Markovian in nature and corresponds to real phonon transitions resulting in a broad phonon sideband in the QD emission spectra. Above 10 K, virtual phonon transitions to higher lying excited states in the QD become the dominant dephasing mechanism, this leads to a broadening of the zero phonon line, and a corresponding rapid decay in the visibility. The microscopic theory we develop provides analytic expressions for the dephasing rates for both virtual phonon scattering and non-Markovian lattice relaxation.

  15. Magnetic-field-driven electron transport in ferromagnetic/ insulator/semiconductor hybrid structures

    Science.gov (United States)

    Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 106% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 104% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

  16. Cross section calculations for electron scattering from platinum chemotherapeutic compounds. Electron scattering from carboplatin and oxaliplatin

    Science.gov (United States)

    Żywicka, B.; Możejko, P.

    2013-10-01

    Cross section for electron impact ionization of carboplatin, C6H12N2O4Pt, and oxaliplatin, C8H14N2O4Pt, have been calculated within binary-encounter-Bethe model for energies from the ionization threshold up to 5000 eV. Cross section for elastic electron scattering from carboplatin and oxaliplatin molecules have also been derived using independent atom method (IAM) and additivity rule for collision energies ranging from 50 eV to 3000 eV. Obtained cross sections have been compared with relevant cross sections for cisplatin molecules.

  17. Transmission electron microscopy of GaN based, doped semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pretorius, A.

    2006-07-01

    This thesis addresses the analysis of GaN based heterostructures with transmission electron microscopy (TEM). Basic properties of the material of interest are introduced in chapter 2. These include the structural and optical properties as well as an introduction to the growth methods used for the samples analysed in this work. In chapter 3 a brief theoretical treatment of TEM is given. As one main topic of this work is the determination of the In concentration in InGaN islands using strain state analysis, a detailed description of the method is given. Chapter 4 describes the results obtained for pyramidal defects present in metalorganic vapour phase epitaxy grown GaN:Mg with high dopant concentration. Based on the experimental results and the well established knowledge that GaN of inverted polarity is present inside the pyramidal defects, a variety of basal plane inversion domain boundary models was set up. From these models, HRTEM images were simulated using the multislice approach, followed by a quantitative comparison to experimentally obtained HRTEM images. Another focus of this work is the analysis of In{sub x}Ga{sub 1-x}N islands grown on GaN presented in chapter 5. Following a literature survey which describes different methods used to obtain In{sub x}Ga{sub 1-x}N islands, the first topic is the distinction of In{sub x}Ga{sub 1-x}N islands and metal droplets, which can form during growth. This is followed by the experimental results of molecular beam epitaxy and metalorganic vapour phase epitaxy grown In{sub x}Ga{sub 1-x}N island and quantum dot samples. (orig.)

  18. Growth and Electronic Structure of Heusler Compounds for Use in Electron Spin Based Devices

    Science.gov (United States)

    2015-06-01

    well, these were the people who kept me sane and let me think about something else for a change, like teaching me how to ski : Jason S., Evelyn, Alex S...Dissertation, 2014. [2] T. Graf, C. Felser, and S. S. Parkin. Simple rules for the understanding of Heusler compounds. Progress in Solid State Chemistry ...manganese. Journal of Physics and Chemistry of Solids, 32, 1971. doi:10.1016/S0022-3697(71)80180-4. [5] S. Sakurada and N. Shutoh. Effect of Ti

  19. Electron spin resonance investigaton of semiconductor materials for application in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Lihong

    2012-07-01

    In the present work, hydrogenated silicon and its alloys silicon carbide and silicon oxide have been investigated using electron spin resonance (ESR). The microstructure of these materials ranges from highly crystalline to amorphous. The correlation between the paramagnetic defects, microstructure, optical and electrical properties has been discussed. Correspondingly, these properties were characterized by the spin density (N{sub S}), g-value and the lineshape of ESR spectra, Infrared (I{sup IR}{sub C}) and/or Raman crystallinity (I{sup RS}{sub C}) as well as optical absorption and electrical dark conductivity ({sigma}{sub D}). 1. As the light absorber, Si layers essentially should have low defect density and good stability against light exposure. The spin density (N{sub S}) measured by ESR is often used as a measure for the paramagnetic defect density (N{sub D}) in the material. However, ESR sample preparation procedures can potentially cause discrepancy between N{sub S} and N{sub D}. Using Mo-foil, Al-foil and ZnO:Al-covered glass as sacrificial substrates, {mu}c-Si:H and a-Si:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD), and ESR powder samples have been prepared with corresponding procedures. Possible preparation-related metastability and instability effects have been investigated in terms of substrate dependence, HCl-etching and atmosphere exposure. A sequence of 'preparation - annealing - air-exposure - annealing' has been designed to investigate the metastability and instability effects. N{sub S} after post-preparation air exposure is higher than in the annealed states, especially for the highly crystalline {mu}c-Si:H material the discrepancy reached one order of magnitude. Low temperature ESR measurements at 40 K indicated that atmospheric exposure leads to a redistribution of the defect states which in turn influence the evaluated N{sub S}. In annealed conditions the samples tend to have lower N{sub S} presumably due

  20. Chlorine and Bromine Isotope Fractionation of Halogenated Organic Compounds in Electron Ionization Mass Spectrometry

    OpenAIRE

    Tang, Caiming; Tan, Jianhua; Shi, Zhiqiang; Tang, Caixing; Xiong, Songsong; Liu, Jun; Fan, Yujuan; Peng, Xianzhi

    2017-01-01

    Revelation of chlorine and bromine isotope fractionation of halogenated organic compounds (HOCs) in electron ionization mass spectrometry (EI-MS) is crucial for compound-specific chlorine/bromine isotope analysis (CSIA-Cl/Br) using gas chromatography EI-MS (GC-EI-MS). This study systematically investigated chlorine/bromine isotope fractionation in EI-MS of HOCs including 12 organochlorines and 5 organobromines using GC-double focus magnetic-sector high resolution MS (GC-DFS-HRMS). Chlorine/br...

  1. ASTM E 1559 method for measuring material outgassing/deposition kinetics has applications to aerospace, electronics, and semiconductor industries

    Science.gov (United States)

    Garrett, J. W.; Glassford, A. P. M.; Steakley, J. M.

    1994-01-01

    The American Society for Testing and Materials has published a new standard test method for characterizing time and temperature-dependence of material outgassing kinetics and the deposition kinetics of outgassed species on surfaces at various temperatures. This new ASTM standard, E 1559(1), uses the quartz crystal microbalance (QCM) collection measurement approach. The test method was originally developed under a program sponsored by the United States Air Force Materials Laboratory (AFML) to create a standard test method for obtaining outgassing and deposition kinetics data for spacecraft materials. Standardization by ASTM recognizes that the method has applications beyond aerospace. In particular, the method will provide data of use to the electronics, semiconductor, and high vacuum industries. In ASTM E 1559 the material sample is held in vacuum in a temperature-controlled effusion cell, while its outgassing flux impinges on several QCM's which view the orifice of the effusion cell. Sample isothermal total mass loss (TML) is measured as a function of time from the mass collected on one of the QCM's which is cooled by liquid nitrogen, and the view factor from this QCM to the cell. The amount of outgassed volatile condensable material (VCM) on surfaces at higher temperatures is measured as a function of time during the isothermal outgassing test by controlling the temperatures of the remaining QCM's to selected values. The VCM on surfaces at temperatures in between those of the collector QCM's is determined at the end of the isothermal test by heating the QCM's at a controlled rate and measuring the mass loss from the end of the QCM's as a function of time and temperature. This reevaporation of the deposit collected on the QCM's is referred to as QCM thermogravimetric analysis. Isothermal outgassing and deposition rates can be determined by differentiating the isothermal TML and VCM data, respectively, while the evaporation rates of the species can be obtained as a

  2. Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ouardi, Siham

    2012-03-19

    This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications. The first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co{sub 2}MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound. A major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. This thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi{sub 1-x}M{sub x}Sn (where M=Sc, V and 0electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The pure compounds showed n-type behavior, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 {mu}V/K (350 K) was obtained for NiTi{sub 0.26}Sc{sub 0.04}Zr{sub 0.35}Hf{sub 0.35}Sn. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi{sub 0.3}Zr{sub 0.35}Hf{sub 0.35}Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk

  3. A map of high-mobility molecular semiconductors

    Science.gov (United States)

    Fratini, S.; Ciuchi, S.; Mayou, D.; de Laissardière, G. Trambly; Troisi, A.

    2017-10-01

    The charge mobility of molecular semiconductors is limited by the large fluctuation of intermolecular transfer integrals, often referred to as off-diagonal dynamic disorder, which causes transient localization of the carriers' eigenstates. Using a recently developed theoretical framework, we show here that the electronic structure of the molecular crystals determines its sensitivity to intermolecular fluctuations. We build a map of the transient localization lengths of high-mobility molecular semiconductors to identify what patterns of nearest-neighbour transfer integrals in the two-dimensional (2D) high-mobility plane protect the semiconductor from the effect of dynamic disorder and yield larger mobility. Such a map helps rationalizing the transport properties of the whole family of molecular semiconductors and is also used to demonstrate why common textbook approaches fail in describing this important class of materials. These results can be used to rapidly screen many compounds and design new ones with optimal transport characteristics.

  4. Dissociative electron attachment to nitroaromatic compounds - resonances as fingerprints for isomers

    Energy Technology Data Exchange (ETDEWEB)

    Sulzer, P [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Mauracher, A [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Denifl, S [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Zappa, F [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Ptasinska, S [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Rondino, F [Dip. di Studi di Chimica e Tecnologia delle Sostanze Biologicamente Attive, University ' La Sapienza' , P.le Aldo Moro 5, I-00185 Rome (Italy); Scheier, P [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Maerk, T D [Institut fuer Ionenphysik und Angewandte Physik and Center for Molecular Biosciences Innsbruck, Leopold-Franzens Universitaet Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria)

    2007-11-15

    We present detailed free electron attachment measurements on nitroaromatic compounds in the gas phase. It turns out that dissociative electron attachment can act as a selective and sensitive probe for the identification of isomeric forms of nitrotoluene and dinitrobenzene. Rich fragmentation patterns have been observed for both nitroaromates and all fragments above the detection limit of our instrument have been investigated with a high energy resolution electron monochromator in the energy range of about 0 to 15 eV. It is shown that relative attachment cross section curves can act as fingerprints for the particular molecule and its isomers. Additionally it has been observed that numerous fragments arise from surprisingly complex structural and electronic rearrangements.

  5. Volatile compounds and odor traits of dry-cured ham (Prosciutto crudo) irradiated by electron beam and gamma ray

    Science.gov (United States)

    Prosciutto crudo were irradiated at 0, 3 and 6kGy by gamma ray (GR) and electron beam (EB), respectively. The odor scores and volatile compounds were examined after 7 days storage at 4'. Volatile compounds from samples without and with irradiation at 6kGy were analyzed by GC-MS. Fifty-nine compounds...

  6. Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe

    Energy Technology Data Exchange (ETDEWEB)

    Campi, Davide; Bernasconi, Marco, E-mail: marco.bernasconi@mater.unimib.it [Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125, Milano (Italy); Donadio, Davide [Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany); Sosso, Gabriele C. [Computational Science, Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, via Giuseppe Buffi 13, CH-6900 Lugano (Switzerland); Behler, Jörg [Lehrstuhl für Theoretische Chemie, Ruhr-Universität Bochum, Universitätsstrasse 150, D-44780 Bochum (Germany)

    2015-01-07

    Phonon dispersion relations and electron-phonon coupling of hole-doped trigonal GeTe have been computed by density functional perturbation theory. This compound is a prototypical phase change material of interest for applications in phase change non-volatile memories. The calculations allowed us to estimate the electron-phonon contribution to the thermal boundary resistance at the interface between the crystalline and amorphous phases present in the device. The lattice contribution to the thermal boundary resistance has been computed by non-equilibrium molecular dynamics simulations with an interatomic potential based on a neural network scheme. We find that the electron-phonon term contributes to the thermal boundary resistance to an extent which is strongly dependent on the concentration and mobility of the holes. Further, for measured values of the holes concentration and electrical conductivity, the electron-phonon term is larger than the contribution from the lattice. It is also shown that the presence of Ge vacancies, responsible for the p-type degenerate character of the semiconductor, strongly affects the lattice thermal conductivity of the crystal.

  7. Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe

    Science.gov (United States)

    Campi, Davide; Donadio, Davide; Sosso, Gabriele C.; Behler, Jörg; Bernasconi, Marco

    2015-01-01

    Phonon dispersion relations and electron-phonon coupling of hole-doped trigonal GeTe have been computed by density functional perturbation theory. This compound is a prototypical phase change material of interest for applications in phase change non-volatile memories. The calculations allowed us to estimate the electron-phonon contribution to the thermal boundary resistance at the interface between the crystalline and amorphous phases present in the device. The lattice contribution to the thermal boundary resistance has been computed by non-equilibrium molecular dynamics simulations with an interatomic potential based on a neural network scheme. We find that the electron-phonon term contributes to the thermal boundary resistance to an extent which is strongly dependent on the concentration and mobility of the holes. Further, for measured values of the holes concentration and electrical conductivity, the electron-phonon term is larger than the contribution from the lattice. It is also shown that the presence of Ge vacancies, responsible for the p-type degenerate character of the semiconductor, strongly affects the lattice thermal conductivity of the crystal.

  8. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  9. Deformation effects in electronic spectra of the layered semiconductors TlGaS{sub 2}, TlGaSe{sub 2} and TlInS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Allakhverdiev, K R [Institute of Physics, Azerbaijan National Academy of Sciences, H Javid avenue 33, 370143, Baku (Azerbaijan); Mammadov, T G [Institute of Physics, Azerbaijan National Academy of Sciences, H Javid avenue 33, 370143, Baku (Azerbaijan); Suleymanov, R A [Institute of Physics, Azerbaijan National Academy of Sciences, H Javid avenue 33, 370143, Baku (Azerbaijan); Gasanov, N Z [Institute of Physics, Azerbaijan National Academy of Sciences, H Javid avenue 33, 370143, Baku (Azerbaijan)

    2003-03-05

    The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS{sub 2}, TlGaSe{sub 2} and TlInS{sub 2} are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A{sub 3}B{sub 6} group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.

  10. Deformation effects in electronic spectra of the layered semiconductors TlGaS sub 2 , TlGaSe sub 2 and TlInS sub 2

    CERN Document Server

    Allakhverdiev, K R; Suleymanov, R A; Gasanov, N Z

    2003-01-01

    The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS sub 2 , TlGaSe sub 2 and TlInS sub 2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A sub 3 B sub 6 group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.

  11. All-electron exact exchange treatment of semiconductors: effect of core-valence interaction on band-gap and d-band position.

    Science.gov (United States)

    Sharma, S; Dewhurst, J K; Ambrosch-Draxl, C

    2005-09-23

    We present the first all-electron full-potential exact exchange (EXX) Kohn-Sham density functional calculations on a range of semiconductors and insulators (Ge, GaAs, CdS, Si, ZnS, C, BN, Ne, Ar, Kr, and Xe). We remove one of the main computational obstacles of such calculations by the use of a highly efficient basis for inversion of the response function. We find that the band gaps are not as close to experiment as those obtained from previous pseudopotential EXX calculations. The locations of d bands, determined using the full-potential EXX method, are in excellent agreement with experiment, irrespective of whether these are core, semicore, or valence states. We conclude that the inclusion of the core-valence interaction is necessary for accurate determination of EXX Kohn-Sham band structures and that EXX alone is not a complete answer to the band-gap problem in semiconductors.

  12. Two-dimensional and tubular structures of misfit compounds: Structural and electronic properties

    Directory of Open Access Journals (Sweden)

    Tommy Lorenz

    2014-11-01

    Full Text Available Misfit layer compounds are structures that consist of two sublattices differing in at least one of their lattice constants. The two different layers are stacked either an alternating or in a more complex series resulting in mono- or multi-layer misfit compounds. To date, planar and bent misfit structures, such as tubes, scrolls or nanoparticles, have been synthesized and interesting magnetic and physical properties have been observed as a result of their special structures. Based on these observations, we present an overview of such misfit systems and summarize and discuss their electronic structure as well as the interlayer bonding behaviour, which is not completely understood yet. Furthermore, a more detailed insight into the SnS–SnS2 system is given, which was the first tubular misfit compound that has been synthesized and extensively investigated.

  13. The electronic structure of the metastable layer compound 1T-CrSe2

    NARCIS (Netherlands)

    Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.; vanBruggen, C.F.; deGroot, R.A.

    1997-01-01

    The electronic structure of the metastable compound 1T-CrSe2 (a = 3.399 Å, c = 5.911 Å, space group P_3m1) was calculated with and without spin polarization using the LSW method. The energy is 0.29 eV/mol CrSe2 lower for the spin-polarized calculation. The total magnetic moment of +2.44 μB on Cr

  14. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

    Science.gov (United States)

    2017-01-01

    Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. PMID:29200530

  15. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

    Science.gov (United States)

    Wellmann, Peter J

    2017-11-17

    Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

  16. Vibrational and electronic properties of 4‧-halomethyl-2-biphenylcarbonitrile compounds

    Science.gov (United States)

    Shankar Rao, Y. B.; Veeraiah, V.; Sundius, Tom; Chaitanya, Kadali

    2017-09-01

    In this paper we studied the structural, vibrational and electronic properties of the 4‧-bromomethyl-2-biphenylcarbonitrile (BMBP) 4‧-chloromethyl-2-biphenylcarbonitrile (CMBP) and 4‧-fluoromethyl-2-biphenylcarbonitrile (FMBP) compounds using experimental and theoretical methods. The FT-IR and FT-Raman spectra of BMBP in solid phase were recorded in the region 4000-400 cm-1 and 4000-50 cm-1, respectively. The UV absorption spectrum of BMBP was recorded in dichloromethane and methanol solvents in the range 180-400 nm. The theoretical spectral properties of title compounds were simulated using density functional theory (DFT) and time dependent DFT methods. Scaling of the vibrational frequencies was carried out with the MOLVIB program using multiple scaling factors and assignment to each vibrational frequency was consigned on the basis of potential energy distribution (PED). The electronic spectrum of BMBP in two different solvents (methanol and dichloromethane), calculated at the CAM-B3LYP/6-31G(d,p) level compares well with the experimental data and validates the current method for predicting the absorption spectrum of CMBP and FMBP. Furthermore, the electronic, nonlinear optical and thermodynamics properties of the three compounds were discussed in detailed.

  17. Lack of heritability of exhaled volatile compound pattern: an electronic nose twin study.

    Science.gov (United States)

    Tarnoki, David Laszlo; Bikov, Andras; Tarnoki, Adam Domonkos; Lazar, Zsofia; Szilagyi, Blanka Krisztina; Korosi, Beata Zita; Horvath, Tamas; Littvay, Levente; Losonczy, Gyorgy; Horvath, Ildiko

    2014-03-01

    Electronic noses can distinguish various disorders by analyzing exhaled volatile organic compound (VOC) pattern; however it is unclear how hereditary and environmental backgrounds affect the exhaled VOC pattern. A twin study enrolling monozygotic (MZ) and dizygotic (DZ) twins is an ideal tool to separate the influence of these factors on the exhaled breath pattern. Exhaled breath samples were collected in duplicates from 28 never smoking twin pairs (in total 112 samples) without lung diseases and processed with an electronic nose (Cyranose 320). Univariate quantitative hereditary modeling (ACE analysis) adjusted for age and gender was performed to decompose the phenotypic variance of the exhaled volatile compound pattern (assessing principal components (PCs) derived from electronic nose data) into hereditary (A), shared (C), and unshared (E) environmental effects. Exhaled VOC pattern showed good intra-subject reproducibility as assessed with the Bland-Altman plot. Significant correlations were found between exhaled VOC patterns of both MZ and DZ twins. The hereditary background did not influence the VOC pattern. The shared environmental effect on PC 1, 2 and 3 was estimated to be 93%, 94% and 54%, respectively. The unshared (unique) environmental influence explained a smaller variance (7%, 6% and 46%). For the first time using the twin design, we have shown that the environmental background largely affects the exhaled volatile compound pattern in never smoking volunteers without respiratory disorders. Further studies should identify these environmental factors and also assess their influence on exhaled breath patterns in patients with lung diseases.

  18. Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

    Science.gov (United States)

    Ibarra-Hernández, Wilfredo; Elsayed, Hannan; Romero, Aldo H.; Bautista-Hernández, Alejandro; Olguín, Daniel; Cantarero, Andrés

    2017-07-01

    There is a growing interest in the property dependence of transition metal dichalcogenides as a function of the number of layers and formation of heterostructures. Depending on the stacking, doping, edge effects, and interlayer distance, the properties can be modified, which opens the door to novel applications that require a detailed understanding of the atomic mechanisms responsible for those changes. In this work, we analyze the electronic properties and lattice dynamics of a heterostructure constructed by simultaneously stacking InSe layers and GaSe layers bounded by van der Waals forces. We have assumed the same space group of GaSe, P 6 ¯m 2 as it becomes the lower energy configuration for other considered stackings. The structural, vibrational, and optical properties of this layered compound have been calculated using density functional theory. The structure is shown to be energetically, thermally, and elastically stable, which indicates its possible chemical synthesis. A correlation of the theoretical physical properties with respect to its parent compounds is extensively discussed. One of the most interesting properties is the low thermal conductivity, which indicates its potential use in thermolectric applications. Additionally, we discuss the possibility of using electronic gap engineering methods, which can help us to tune the optical emission in a variable range close to that used in the field of biological systems (NIR). Finally, the importance of considering properly van der Waals dispersion in layered materials has been emphasized as included in the exchange correlation functional. As for the presence of atoms with important spin-orbit coupling, relativistic corrections have been included.

  19. Nanoscale Semiconductor Electronics

    Science.gov (United States)

    2015-02-25

    Photoluminescence from InGaSb channels growth on Silicon and SOI. .....................25 Figure 23. Presence of anti-phase domains on AlSb grown...and newer variations in wafer bonding that incorporate an intermediate layer such as polymers or spin on glass to bond the III-Vs to the Sii[8]. While...groups have seen this result as well. The growth of the InGaSb channels on silicon can be characterized by studying the photoluminescence from the

  20. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  1. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  2. Nanocrystalline semiconductor doped rare earth oxide for the photocatalytic degradation studies on Acid Blue 113: A di-azo compound under UV slurry photoreactor.

    Science.gov (United States)

    Suganya Josephine, G A; Mary Nisha, U; Meenakshi, G; Sivasamy, A

    2015-11-01

    Preventive measures for the control of environmental pollution and its remediation has received much interest in recent years due to the world-wide increase in the contamination of water bodies. Contributions of these harmful effluents are caused by the leather processing, pharmaceutical, cosmetic, textile, agricultural and other chemical industries. Nowadays, advanced oxidation processes considered to be better option for the complete destruction of organic contaminants in water and wastewater. Acid Blue 113 is a most widely used di-azo compound in leather, textile, dying and food industry as a color rending compound. In the present study, we have reported the photo catalytic degradation of Acid Blue 113 using a nanocrystalline semiconductor doped rare earth oxide as a photo catalyst under UV light irradiation. The photocatalyst was prepared by a simple precipitation technique and were characterized by XRD, FT-IR, UV-DRS and FE-SEM analysis. The experimental results proved that the prepared photo catalyst was nanocrystalline and highly active in the UV region. The UV-DRS results showed the band gap energy was 3.15eV for the prepared photo catalyst. The photodegradation efficiency was analyzed by various experimental parameters such as pH, catalyst dosage, variation of substrate concentration and effect of electrolyte addition. The photo degradation process followed a pseudo first order kinetics and was continuously monitored by UV-visible spectrophotometer. The experimental results proved the efficacy of the nanocrystalline zinc oxide doped dysprosium oxide which are highly active under UV light irradiations. It is also suggested that the prepared material would find wider applications in environmental remediation technologies to remove the carcinogenic and toxic moieties present in the industrial effluents. Copyright © 2015 Elsevier Inc. All rights reserved.

  3. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  4. Ab Initio Investigation of the Structural, Electronic and Optical Properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) Compounds

    Science.gov (United States)

    Wong, Kin Mun; Khan, Wilayat; Shoaib, M.; Shah, Umar; Khan, Shah Haider; Murtaza, G.

    2018-01-01

    The structural, electronic and optical properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds, which are scarcely studied by theoretical methods previously, have been investigated by ab initio calculations based on the density functional theory (DFT) in this article by using the full potential linearized augmented plane wave method. The equilibrium structural ground state properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds such as the lattice parameters were obtained from the structural optimization process (with the Perdew-Burke-Ernzerhof generalized gradient approximation), and they are in close agreement with the experimental lattice parameters. Conversely, calculations by the modified Becke Johnson exchange potential indicates that the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds are semiconductors with direct energy band gaps. It is clearly observed from the DFT-calculated partial density of states, that there are significant contributions of the S- s and S- p states in the Li2In2SiS6 and Li2In2GeS6 compounds as well as the Se- s and Se- p states in the Li2In2SiSe6 and Li2In2GeSe6 compounds, respectively. The calculated band gaps ranging from 1.92 eV to 3.24 eV of the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds are in good agreement with the experimental results, where the calculated band gap values are positioned in the visible region of the electromagnetic spectrum; therefore, these materials can be efficiently used for opto-electronic and optical applications. Furthermore, some general trends are observed in the optical responses of the compounds, which are possibly correlated to the energy band gaps when the X cations changes from Si to Ge and the Y anions changes from S to Se in the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds, respectively.

  5. Ab Initio Investigation of the Structural, Electronic and Optical Properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) Compounds

    Science.gov (United States)

    Wong, Kin Mun; Khan, Wilayat; Shoaib, M.; Shah, Umar; Khan, Shah Haider; Murtaza, G.

    2017-09-01

    The structural, electronic and optical properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds, which are scarcely studied by theoretical methods previously, have been investigated by ab initio calculations based on the density functional theory (DFT) in this article by using the full potential linearized augmented plane wave method. The equilibrium structural ground state properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds such as the lattice parameters were obtained from the structural optimization process (with the Perdew-Burke-Ernzerhof generalized gradient approximation), and they are in close agreement with the experimental lattice parameters. Conversely, calculations by the modified Becke Johnson exchange potential indicates that the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds are semiconductors with direct energy band gaps. It is clearly observed from the DFT-calculated partial density of states, that there are significant contributions of the S-s and S-p states in the Li2In2SiS6 and Li2In2GeS6 compounds as well as the Se-s and Se-p states in the Li2In2SiSe6 and Li2In2GeSe6 compounds, respectively. The calculated band gaps ranging from 1.92 eV to 3.24 eV of the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds are in good agreement with the experimental results, where the calculated band gap values are positioned in the visible region of the electromagnetic spectrum; therefore, these materials can be efficiently used for opto-electronic and optical applications. Furthermore, some general trends are observed in the optical responses of the compounds, which are possibly correlated to the energy band gaps when the X cations changes from Si to Ge and the Y anions changes from S to Se in the Li2In2XY6 (X = Si, Ge; Y = S, Se) compounds, respectively.

  6. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  7. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  8. Physics of semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prew, B.A.

    1975-09-01

    The properties of semiconductors which make them important in the electronic devices industry, and how these properties are controlled by doping, are described. The physics and applications of p-n and other junction devices, and of bulk effect devices are discussed. Avalanche devices, optical devices, solar cells, Schottky barriers, MOS devices, heterojunctions, photoconductors, and transferred electron devices are considered.

  9. Enhanced Photoreduction of Nitro-aromatic Compounds by Hydrated Electrons Derived from Indole on Natural Montmorillonite.

    Science.gov (United States)

    Tian, Haoting; Guo, Yong; Pan, Bo; Gu, Cheng; Li, Hui; Boyd, Stephen A

    2015-07-07

    A new photoreduction pathway for nitro-aromatic compounds (NACs) and the underlying degradation mechanism are described. 1,3-Dinitrobenzene was reduced to 3-nitroaniline by the widely distributed aromatic molecule indole; the reaction is facilitated by montmorillonite clay mineral under both simulated and natural sunlight irradiation. The novel chemical reaction is strongly affected by the type of exchangeable cation present on montmorillonite. The photoreduction reaction is initiated by the adsorption of 1,3-dinitrobenzene and indole in clay interlayers. Under light irradiation, the excited indole molecule generates a hydrated electron and the indole radical cation. The structural negative charge of montmorillonite plausibly stabilizes the radical cation hence preventing charge recombination. This promotes the release of reactive hydrated electrons for further reductive reactions. Similar results were observed for the photoreduction of nitrobenzene. In situ irradiation time-resolved electron paramagnetic resonance and Fourier transform infrared spectroscopies provided direct evidence for the generation of hydrated electrons and the indole radical cations, which supported the proposed degradation mechanism. In the photoreduction process, the role of clay mineral is to both enhance the generation of hydrated electrons and to provide a constrained reaction environment in the galley regions, which increases the probability of contact between NACs and hydrated electrons.

  10. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  11. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  12. High-T C fully compensated ferrimagnetic semiconductors as spin-filter materials: the case of CrVXAl (X = Ti, Zr, Hf) Heusler compounds.

    Science.gov (United States)

    Galanakis, I; Özdoğan, K; Şaşıoglu, E

    2014-02-26

    We extend our recent work on spin-filter materials (Galanakis et al 2013 Appl. Phys. Lett.103 142404) to the case of CrVXAl (X = Ti, Zr, Hf) compounds, for which, using ab initio electronic structure calculations, we show that p-d hybridization leads to the formation of a fully compensated ferrimagnetic semiconducting state with moderate exchange splitting. The magnetism is of covalent-type and the very strong antiferromagnetic Cr-V exchange interactions lead to extremely high Curie temperature, TC, values. Furthermore, all three compounds are thermodynamically and magnetically stable. The combination of very high TC values with a zero total net magnetization makes them promising materials for spintronics applications.

  13. First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr2S4

    Science.gov (United States)

    Xu-Hui, Zhu; Xiang-Rong, Chen; Bang-Gui, Liu

    2016-05-01

    The electronic structures, the effective masses, and optical properties of spinel CdCr2S4 are studied by using the full-potential linearized augmented planewave method and a modified Becke-Johnson exchange functional within the density-functional theory. Most importantly, the effects of the spin-orbit coupling (SOC) on the electronic structures and carrier effective masses are investigated. The calculated band structure shows a direct band gap. The electronic effective mass and the hole effective mass are analytically determined by reproducing the calculated band structures near the BZ center. SOC substantially changes the valence band top and the hole effective masses. In addition, we calculated the corresponding optical properties of the spinel structure CdCr2S4. These should be useful to deeply understand spinel CdCr2S4 as a ferromagnetic semiconductor for possible semiconductor spintronic applications. Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant Nos. U1430117 and U1230201).

  14. Ultrafast responses of dipolar and octupolar compounds with dipicolinate as an electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yaochuan, E-mail: ycwang@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian 116026 (China); State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116024 (China); Liu, Siyuan; Liu, Dajun; Wang, Guiqiu [Department of Physics, Dalian Maritime University, Dalian 116026 (China); Xiao, Haibo [Department of Chemistry, Shanghai Normal University, Shanghai 200234 (China)

    2016-11-01

    Two dipolar compounds with dipicolinate as electron acceptor group named trans-dimethyl-4-[4’-(N,N-dimethylamino)-styry1]-pyridin-2,6-dicarboxylate (M-1), trans-dimethyl-4-[4'-(N,N-diphenylamino)-styry1]-pyridin-2,6-dicarboxylate (P-1) as well as a P-1 based multi-branched octupolar compound {4-[(E)-2-(2,6-dimethoxycarbonylpyridin-4-yl) vinyl]}-N,N-bis{4-[(E)-2-(2,6-dimethoxycarbonylpyridin-4-yl)vinylphenyl]} aniline (P-3) with intense two-photon fluorescence emission properties are systematically investigated by using steady-state absorption and fluorescence spectroscopy, Z-scan, and two-photon excited fluorescence (TPF) method. The two-photon absorption cross section of octupolar compound P-3 in THF solution is determined to be 376 GM, which is approximately 12 times greater than that of dipolar counterpart P-1 (32 GM). Transient absorption spectroscopy is employed to investigate the excited state dynamics of the dipolar and octupolar compounds. The formation and relaxation lifetimes of the intra-molecular charge transfer (ICT) state are determined to be in the ranges of several picoseconds and several-hundreds of picoseconds, respectively, for all the three compounds in THF solutions. An extended π-conjugated system and increased intra-molecular cooperative effect are responsible for the observed large two-photon absorption character. - Highlights: • Octupolar compound gain 12-fold enhancement of two photon absorption. • Dynamic properties of intra-molecular charge transfer state are determined. • Cooperative effect is responsible for great increase of two photon character.

  15. Structural, electronic and magnetic properties of transition metal atom-doped ZnS dilute magnetic semiconductors: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Zhu-Hua [College of Physics and Information Technology, Shaanxi Normal University, Xian, 710119, Shaanxi (China); Zhang, Jian-Min, E-mail: jmzhang@snnu.edu.cn [College of Physics and Information Technology, Shaanxi Normal University, Xian, 710119, Shaanxi (China); Xu, Ke-Wei [State Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xian, 710049, Shaanxi (China)

    2016-11-01

    The spin-polarized first-principles calculations are performed to study the structural, electronic and magnetic properties of a single and two identical transition metal (TM) atoms X (X = V, Cr, Mn, Fe, Co and Ni) doped ZnS dilute magnetic semiconductors (DMS). The single V-, Cr-, Fe- and Ni-doped ZnS systems exhibit the magnetic half-metallic (HM) characters, while Mn- and Co-doped ZnS systems display magnetic semiconducting characters. For two identical TM atoms doped ZnS systems, the two identical V, Cr and Ni atoms are in a ferromagnetic (FM) coupling under the double-exchange (DE) mechanism, leading V-, Cr- and Ni-doped ZnS systems to be HM with FM coupling. While two identical Mn- and Co-doped ZnS systems are semiconductors with antiferromagnetic (AFM) coupling consisting with the superexchange (SE) mechanism. Specifically, two identical Fe atoms display a competition between the SE and DE mechanisms. The Zn{sub 70}Fe{sub 2}S{sub 72} system is metal with AFM coupling at the nearest separation of two Fe atoms while HM with FM coupling at the farther separations of two Fe atoms. - Graphical abstract: The 3 × 2 × 3 supercell containing 72 formula units of zincblende ZnS. Red (Green) balls represent the S (Zn) atoms. One TM atom or two identical TM atoms X (X = V, Cr, Mn, Fe, Co or Ni) to substitute for one Zn atom at position 0 or two Zn atoms at positions 0 and i (i = 1, 2, 3 or 4). - Highlights: • A single V, Cr, Fe or Ni (Mn or Co) atoms doped ZnS are magnetic HM (magnetic semiconductor). • Two V, Cr or Ni (two Mn or Co) atoms doped ZnS are FM HM (AFM semiconductor). • Two Fe atoms doped ZnS are AFM metal (FM HM) at the nearest (farther) separations.

  16. QUANTITATIVE ELECTRONIC STRUCTURE - ACTIVITY RELATIONSHIP OF ANTIMALARIAL COMPOUND OF ARTEMISININ DERIVATIVES USING PRINCIPAL COMPONENT REGRESSION APPROACH

    Directory of Open Access Journals (Sweden)

    Paul Robert Martin Werfette

    2010-06-01

    Full Text Available Analysis of quantitative structure - activity relationship (QSAR for a series of antimalarial compound artemisinin derivatives has been done using principal component regression. The descriptors for QSAR study were representation of electronic structure i.e. atomic net charges of the artemisinin skeleton calculated by AM1 semi-empirical method. The antimalarial activity of the compound was expressed in log 1/IC50 which is an experimental data. The main purpose of the principal component analysis approach is to transform a large data set of atomic net charges to simplify into a data set which known as latent variables. The best QSAR equation to analyze of log 1/IC50 can be obtained from the regression method as a linear function of several latent variables i.e. x1, x2, x3, x4 and x5. The best QSAR model is expressed in the following equation,  (;;   Keywords: QSAR, antimalarial, artemisinin, principal component regression

  17. Chemistry of green encapsulating molding compounds at interfaces with other materials in electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Scandurra, A.; Zafarana, R.; Tenya, Y.; Pignataro, S

    2004-07-31

    The interface chemistry between encapsulating epoxy phenolic molding compound (EMC) containing phosphorous based organic flame retardant (the so called 'green materials') and copper oxide-hydroxide and aluminum oxide-hydroxide surfaces have been studied in comparison with 'conventional' EMC containing bromine and antimony as flame retardant. These green materials are designed to reduce the presence of toxic elements in the electronic packages and, consequently, in the environment. For the study were used a Scanning Acoustic Microscopy for delamination measurements, a dynamometer for the pull strength measurements and an ESCA spectrometer for chemical analysis of the interface. The general behavior of the green compound in terms of delamination, adhesion, and corrosion is found better or at least comparable than that of the conventional EMC.

  18. Lanthanum-Based Compounds: Electronic Band-Gap-Dependent Electrocatalytic Materials for Oxygen Reduction Reaction.

    Science.gov (United States)

    Gu, Weiwei; Song, Ye; Liu, Jingjun; Wang, Feng

    2017-07-26

    The electronic energy level of lanthanum compounds plays an important role in the oxygen reduction reaction (ORR) electrocatalytic process. In this work, three lanthanum compounds, LaOHCO3 , La2 O2 CO3 , and La2 O3 , have been synthesized through an in situ urea hydrolysis method, followed by annealing at different temperatures. Among these lanthanum compounds, the layer-structured La2 O2 CO3 has the smallest band gap and moderate values of the conduction band (CB) and valence band (VB). Electrochemical measurements in 0.1 m KOH solution have shown that, compared with the other catalysts, La2 O2 CO3 exhibits the best electrocatalytic activity with the lowest H2 O2 production and highest durability for ORR, which proves the close correlation between electronic energy level and electrocatalytic ORR activity. During the ORR process over La2 O2 CO3 , some covalent electrons from the VB are first excited to the CB and then transfer to the unoccupied π*2p orbitals of an active oxygen molecule, leading to strengthened oxygen adsorption and promotion of the reduction of oxygen. Moreover, La2 O2 CO3 has an ability to chemically disproportionate hydrogen peroxide (to give HO2(-) ), and the produced HO2(-) at the energy level of O2 /HO2(-) can undergo prompt chemical disproportionation into O2 and OH(-) . The O2 generated at this stage is adsorbed on the catalyst surface, which can be utilized for further oxygen reduction. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  20. The Effects of Different Electron-Phonon Couplings on the Spectral and Transport Properties of Small Molecule Single-Crystal Organic Semiconductors

    Directory of Open Access Journals (Sweden)

    Carmine Antonio Perroni

    2014-03-01

    Full Text Available Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene, aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While in the case of rubrene, the coupling between charge carriers and low frequency inter-molecular modes is sufficient for a satisfactory description of spectral and transport properties, the inclusion of electron coupling to both low-frequency inter-molecular and high-frequency intra-molecular vibrational modes is needed to account for the temperature dependence of transport properties in smaller oligoacenes. For rubrene, a very accurate analysis in the relevant experimental configuration has allowed for the clarification of the origin of the temperature-dependent mobility observed in these organic semiconductors. With increasing temperature, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions has been calculated, including vertex corrections that give rise to a transport lifetime one order of magnitude smaller than the spectral lifetime of the states involved in the transport mechanism. The mobility always exhibits a power-law behavior as a function of temperature, in agreement with experiments in rubrene. In systems gated with polarizable dielectrics, the electron coupling to interface vibrational modes of the gate has to be included in addition to the intrinsic electron-phonon interaction. While the intrinsic bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the coupling with interface modes is dominant for the

  1. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  2. Defects in semiconductor nanostructures

    Science.gov (United States)

    Singh, Vijay A.; Harbola, Manoj K.; Pathak, Praveen

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  3. Efficient inverted polymer solar cells integrated with a compound electron extraction layer

    Science.gov (United States)

    Ma, Zhong-Sheng; Wang, Qian-Kun; Li, Chi; Li, Yan-Qing; Zhang, Dan-Dan; Liu, Weimin; Wang, Pengfei; Tang, Jian-Xin

    2015-12-01

    We constructed an effective electron extraction layer (EEL) used for polymer solar cells by integrating one new kind of organic material of 4,4‧-(1,4-phenylene) bis(2-phenyl-6-p-tolylnicotinonitrile) (p-PPtNT) and cesium carbonate (Cs2CO3) used as a compound EEL (CEEL). The CEEL based device exhibits an ideal PCE of 4.15%, corresponding to an enhancement 220% in contrast to that of control device without EEL, which is also comparable to that of ZnO based device. Our analyses indicated that the remarkably improved PCE for CEEL based device is mainly ascribed to the Ohmic contact and the negligible electron extraction barrier at cathode/active layer by inserting CEEL.

  4. Electronic structure of the Ca3Co4O9 compound from ab initio local interactions

    Science.gov (United States)

    Soret, Julien; Lepetit, Marie-Bernadette

    2012-04-01

    We used fully correlated ab initio calculations to determine the effective parameters of Hubbard and t-J models for the thermoelectric misfit compound Ca3Co4O9. As for the NaxCoO2 family, the Fermi level orbitals are the a1g orbitals of the cobalt atoms; the eg' being always lower in energy by more than 240 meV. The electron correlation is found very large U/t˜26 as well as the parameters fluctuations as a function of the structural modulation. The main consequences are a partial a1g electrons localization and a fluctuation of the in-plane magnetic exchange from antiferromagnetic to ferromagnetic. The behavior of the Seebeck coefficient and the figure of merit are discussed in view of the ab initio results, as well as the 496 K phase transition.

  5. The Structures of Self-Assembled Monolayer Films of Organosulfur Compounds Adsorbed on Gold Single Crystals: Electron Diffraction Studies.

    Science.gov (United States)

    1988-01-01

    AD-M193 125 THE STRUCTURES OF SELF-RSSENSLED MOMOLAYER FILMS OF 1/1 ORGANOSULFUR COMPOUND..(U) HRlYARD UNJY CAMBRIDGE MASS DEPT OF CHEMISTRY L STRONG...VV L- ___ THE STRUCTURES OF SELF-ASSEMBLED MONOLAYER FILMS OF ORGANOSULFUR COMPOUNDS ADSORBED ON GOLD SINGLE CRYSTALS: ELECTRON DIFFRACTION STUDIES...true sulfide phase. V V ’A. LA8700876 REVISED The Structures of Self-Assembled Monolayer Films of Organosulfur Compounds Adsorbed on Gold Single

  6. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    Directory of Open Access Journals (Sweden)

    Medvid Artur

    2011-01-01

    Full Text Available Abstract On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity.

  7. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    Science.gov (United States)

    2011-01-01

    On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

  8. The non-linear terahertz response of hot electrons in low-dimensional semiconductor superlattices: Suppression of the polar-optical phonon scattering

    Science.gov (United States)

    Ignatov, Anatoly A.

    2017-10-01

    We study the response of low-dimensional semiconductor superlattices to strong terahertz fields on condition of a strong suppression of inelastic scattering processes of electrons caused by the polar-optical phonons. For our study, we employ a balance equations approach, which allows investigating the response of the superlattices to strong terahertz fields taking account of both the inelastic and the strongly pronounced elastic scattering of electrons. Our approach provides a way to analyze the influence of the Bloch dynamics of electrons in a superlattice miniband side by side with the effects of the electron heating on the magnitude and the frequency dependence of a superlattice current responsivity in the terahertz frequency band. Our study shows that the suppression of the inelastic scattering caused either by a reduction of the superlattice dimensionality by lateral quantization or by a strong magnetic field application can give rise to a huge enhancement of the current responsivity. This enhancement can be interpreted in terms of the well pronounced electronic bolometric effect occurring due to the efficient electron heating in the low-dimensional superlattices by the incident terahertz fields.

  9. Crystal Structure of New Heusler Compounds

    OpenAIRE

    Graf, Tanja; Casper, Frederick; Winterlik, Jürgen; Balke, Benjamin; Fecher, Gerhard H.; Felser, Claudia

    2009-01-01

    Abstract Heusler compounds are promising materials in many fields of contemporary research. The spectrum of their possible applications ranges from magnetic and magneto-mechanical materials over semiconductors and thermoelectrics to superconductors. An important feature of the Heusler compounds is the possibility of controlling the valence electron concentration by partial substitution of elements. On the other hand, the properties also depend on the degree of ordering of the the c...

  10. Electronic and optical properties of the LiCdX (X = N, P, As and Sb) filled-tetrahedral compounds with the Tran–Blaha modified Becke–Johnson density functional

    Energy Technology Data Exchange (ETDEWEB)

    Bouhemadou, A., E-mail: a_bouhemadou@yahoo.fr [Laboratory for Developing New Materials and their Characterization, University of Setif 1, Setif 19000 (Algeria); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Department of Physics, Faculty of Science & Humanitarian Studies, Salman Bin Abdalaziz University, Alkharj 11942 (Saudi Arabia); Allali, D. [Laboratory for Developing New Materials and their Characterization, University of Setif 1, Setif 19000 (Algeria); Al-Otaibi, S.M. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria); Al-Douri, Y. [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Kangar, Perlis 01000 (Malaysia); Chegaar, M. [Department of Physics, Faculty of Science, University of Setif 1, Setif 19000 (Algeria); Reshak, A.H. [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, Pilson 306 14 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, Kangar, Perlis 01007 (Malaysia)

    2015-04-15

    Highlights: • Electronic and optical properties of the LiCdX compounds have been predicted. • Tran–Blaha-modified Becke–Johnson functional significantly improves the band gap. • We predict a direct band gap in all of the considered LiCdX compounds. • Origin of the peaks in the optical spectra is determined. - Abstract: The structural, electronic and optical properties of the LiCdN, LiCdP, LiCdAs and LiCdSb filled-tetrahedral compounds have been explored from first-principles. The calculated structural parameters are consistent with the available experimental results. Since DFT with the common LDA and GGA underestimates the band gap, we use a new developed functional able to accurately describe the electronic structure of semiconductors, namely the Tran–Blaha-modified Becke–Johnson potential. The four investigated compounds demonstrate semiconducting behavior with direct band gap ranging from about 0.32 to 1.65 eV. The charge-carrier effective masses are evaluated at the topmost valence band and at the bottommost conduction band. The evolution of the value and nature of the energy band gap under pressure effect is also investigated. The frequency-dependent complex dielectric function and some macroscopic optical constants are estimated. The microscopic origins of the structures in the optical spectra are determined in terms of the calculated energy band structures.

  11. Process Challenges in Compound Semiconductors.

    Science.gov (United States)

    1988-08-01

    high-speed integrated circuits. Optical interconnects and high-temperature superconductors should be urgently evaluated for this purpose...temperature superconductors may be useful for this application, but, at present, little information is available on loss and dispersion in these...called vapor levitation epitaxy (VLE) has been developed recently [Cox et al., 1986], It is so named because, during the growth process, the substrate

  12. Compound Semiconductor Surfaces and Interfaces.

    Science.gov (United States)

    1986-01-01

    correct. 10. In conjunction with 0. Krivanek and S. Liliental the thermal oxide/InP and SiO 2/InP was investigated with high resolution TEM. This...Press. 30. A Combined HREM , XPS and Electrical Properties Study of the InP-SiO2 Interface, 0. L. Krivanek , Z. Liliental, J. F. Wager, R. G. Gann, S. M...Goodnick and C. W. Wilmsen. 3. Vac. Sci. Technol. to be published. 31. HREM Investigation of the InP-SiO Interface, Z. Liliental, 0. L. Krivanek , 2 J

  13. Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells.

    Science.gov (United States)

    Park, Keunhee; Oh, Seungsik; Jung, Donggeun; Chae, Heeyeop; Kim, Hyoungsub; Boo, Jin-Hyo

    2012-01-09

    We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + 66-phenyl C61 butyric acid methyl ester, bis-(ethylcyclopentadienyl)hafnium(IV) dichloride, and aluminum were deposited as a hole transport layer, an active layer, a cathode interfacial layer, and a cathode, respectively. The hafnium metallocene compound cathode interfacial layer improved the performance of OSCs compared to that of OSCs without the interfacial layer. The current density-voltage characteristics of OSCs with an interfacial layer thickness of 0.7 nm and of those without an interfacial layer showed power conversion efficiency [PCE] values of 2.96% and 2.34%, respectively, under an illumination condition of 100 mW/cm2 (AM 1.5). It is thought that a cathode interfacial layer of an appropriate thickness enhances the electron transfer between the active layer and the cathode, and thus increases the PCE of the OSCs.

  14. Electronic structures of Si- and Te-doped CoSb3 compounds under high pressures

    Science.gov (United States)

    Kobayashi, Kazuaki; Ullah Khan, Atta; Mori, Takao

    2017-05-01

    The electronic and lattice properties of various Si- and Te-doped CoSb3 compounds under hydrostatic compression conditions were calculated by using the total energy pseudopotential method. The calculated compositions of Si- and Te-doped CoSb3 compounds are Co8Sb22Si2, Co8Sb22Te2, Co8Sb21Si2Te1, and Co8Sb21Si1Te2. The applied pressure P values are 0 (ambient), 10, and 100 GPa. The densities of states (DOSs) of Si- and Te-doped CoSb3 compounds under P = 0, 10, and 100 GPa are investigated to compare them with each other. Their DOS shapes and Fermi level positions vary under pressure. In particular, the variations in DOS shape between P = 10 and 100 GPa in Co8Sb21Si2Te1 and Co8Sb21Si1Te2 are markedly large, although they are relatively small between P = 0 and 10 GPa. The gap states of Co8Sb21Si2Te1 and Co8Sb21Si1Te2 around the Fermi level disappear under P = 100 GPa. Seebeck coefficients do not increase under high pressures.

  15. Electronic structure, magnetism and disorder in the Heusler compound Co{sub 2}TiSn

    Energy Technology Data Exchange (ETDEWEB)

    Kandpal, Hem Chandra [Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, Staudinger Weg 9, 55099 Mainz (Germany); Ksenofontov, Vadim [Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, Staudinger Weg 9, 55099 Mainz (Germany); Wojcik, Marek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Seshadri, Ram [Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA 93106 (United States); Felser, Claudia [Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, Staudinger Weg 9, 55099 Mainz (Germany)

    2007-03-21

    Polycrystalline samples of the Heusler compound Co{sub 2}TiSn have been prepared and studied using bulk techniques (x-ray diffraction and magnetization) as well as local probes ({sup 119}Sn Moessbauer spectroscopy and {sup 59}Co nuclear magnetic resonance spectroscopy) in order to determine how disorder affects the half-metallic behaviour and also to establish the joint use of Moessbauer and NMR spectroscopies as a quantitative probe of local atom ordering in these compounds. Additionally, density functional electronic structure calculations on ordered and partially disordered Co{sub 2}TiSn compounds have been carried out at a number of different levels of theory in order to simultaneously understand how the particular choice of DFT scheme as well as disorder affects the computed magnetization. Our studies suggest that a sample which seems well ordered by x-ray diffraction and magnetization measurements can possess up to 10% of antisite (Co/Ti) disordering. Computations similarly suggest that even 12.5% antisite Co/Ti disorder does not destroy the half-metallic character of this material. However, the use of an appropriate level of non-local DFT is crucial.

  16. Electronic structure, magnetism, and disorder in the Heusler compound Co{sub 2}TiSn

    Energy Technology Data Exchange (ETDEWEB)

    Kandpal, Hem C.; Ksenofontov, Vadim; Felser, Claudia [Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, Staudinger Weg 9, 55099 Mainz (Germany); Wojcik, Marek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warszawa (Poland); Seshadri, Ram [Department and Materials Research Laboratory, University of California, Santa Barbara, CA (United States)

    2007-07-01

    Polycrystalline samples of the Heusler compound Co{sub 2}TiSn have been prepared and studied using bulk techniques (X-ray diffraction and magnetization) as well as local probes ({sup 119}Sn Moessbauer spectroscopy and {sup 59}Co nuclear magnetic resonance spectroscopy) in order to determine how disorder affects half-metallic behavior and also, to establish the joint use of Moessbauer and NMR spectroscopies as a quantitative probe of local atom ordering in these compounds. Additionally, density functional electronic structure calculations on ordered and partially disordered Co{sub 2}TiSn compounds have been carried out at a number of different levels of theory in order to simultaneously understand how the particular choice of DFT scheme as well as disorder affect the computed magnetization. Our studies suggest that a sample which seems well-ordered by X-ray diffraction and magnetization measurements can possess up to 10% of antisite (Co/Ti) disordering. Computations similarly suggest that even 12.5% antisite Co/Ti disorder does not destroy the half-metallic character of this material.

  17. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  18. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  19. Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

    Science.gov (United States)

    Seiler, David G.

    1997-10-01

    A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

  20. Optical excitation and electron relaxation dynamics at semiconductor surfaces: a combined approach of density functional and density matrix theory applied to the silicon (001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Buecking, N.

    2007-11-05

    In this work a new theoretical formalism is introduced in order to simulate the phononinduced relaxation of a non-equilibrium distribution to equilibrium at a semiconductor surface numerically. The non-equilibrium distribution is effected by an optical excitation. The approach in this thesis is to link two conventional, but approved methods to a new, more global description: while semiconductor surfaces can be investigated accurately by density-functional theory, the dynamical processes in semiconductor heterostructures are successfully described by density matrix theory. In this work, the parameters for density-matrix theory are determined from the results of density-functional calculations. This work is organized in two parts. In Part I, the general fundamentals of the theory are elaborated, covering the fundamentals of canonical quantizations as well as the theory of density-functional and density-matrix theory in 2{sup nd} order Born approximation. While the formalism of density functional theory for structure investigation has been established for a long time and many different codes exist, the requirements for density matrix formalism concerning the geometry and the number of implemented bands exceed the usual possibilities of the existing code in this field. A special attention is therefore attributed to the development of extensions to existing formulations of this theory, where geometrical and fundamental symmetries of the structure and the equations are used. In Part II, the newly developed formalism is applied to a silicon (001)surface in a 2 x 1 reconstruction. As first step, density-functional calculations using the LDA functional are completed, from which the Kohn-Sham-wave functions and eigenvalues are used to calculate interaction matrix elements for the electron-phonon-coupling an the optical excitation. These matrix elements are determined for the optical transitions from valence to conduction bands and for electron-phonon processes inside the

  1. ESR dosimeter material properties of phenols compound exposed to radiotherapeutic electron beams

    Science.gov (United States)

    Gallo, Salvatore; Iacoviello, Giuseppina; Bartolotta, Antonio; Dondi, Daniele; Panzeca, Salvatore; Marrale, Maurizio

    2017-09-01

    There is a need for a sensitive dosimeter using Electron Spin Resonance spectroscopy for use in medical applications, since non-destructive read-out and dose archival could be achieved with this method. This work reports a systematic ESR investigation of IRGANOX ® 1076 exposed to clinical electron beams produced by a LINAC used for radiation therapy treatments. Recently, dosimetric features of this material were investigated for irradiation with 60Co γ -photons and neutrons in both pellet and film shape and have been found promising thanks to their high efficiency of radiation-matter energy transfer and radical stability at room temperature. Here the analysis of the dosimetric features of these ESR dosimeters exposed to clinical electron beams at energies of 7, 10 and 14 MeV, is described in terms of dependence on microwave power and modulation amplitude, response on dose, dependence on beam type, detection limits, and signal stability after irradiation. The analysis of the ESR signal as function of absorbed dose highlights that the response of this material is linear in the dose range investigated (1-13 Gy) and is independent of the beam energy. The minimum detectable dose is found to be smaller than 1 Gy. Comparison of electron stopping power values of these dosimeters with those of water and soft tissue highlights equivalence of the response to electron beams in the energy range considered. The signal intensity was monitored for 40 days after irradiation and for all energies considered and it shows negligible variations in the first 500 h after irradiation whereas after 1100 h the signal decay is only of about 4%. In conclusion, it is found that phenolic compounds possess good dosimetric features which make it useful as a sensitive dosimeter for medical applications.

  2. Controlling the stoichiometry and doping of semiconductor materials

    Science.gov (United States)

    Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

    2016-08-16

    Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

  3. Photocatalytic semiconductor clusters for fuel production

    Energy Technology Data Exchange (ETDEWEB)

    Wilcoxon, J.P.; Bliss, D.E.; Martin, J.E. [and others

    1995-10-01

    High quality crystalline, monodisperse nanometer-size semiconductor clusters were successfully grown using an inverse micellar synthesis process and their optical and structural properties were studied. Among the materials studied were PbS, FeS{sub 2}, MoS{sub 2}, CdS and related compounds. The results demonstrated strong electronic quantum confinement effects and broad tailorability of the bandgaps with decreasing cluster size, features that are important for the potential use of these materials as photocatalysts for solar fuel production and solar detoxification. The highlights of the work are included in an Executive Summary.

  4. Location of lanthanide impurity levels in the III-V semiconductor GaN

    NARCIS (Netherlands)

    Dorenbos, P.; Van der Kolk, E.

    2006-01-01

    Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent

  5. Evolution of electronic structure in highly charge doped MoS2 compounds

    Science.gov (United States)

    Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

    Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

  6. Electronic structure and optical properties of the HoCoSi and ErNiSi compounds

    Energy Technology Data Exchange (ETDEWEB)

    Knyazev, Yu. V.; Lukoyanov, A. V., E-mail: lukoyanov@imp.uran.ru; Kuz’min, Yu. I. [Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation); Gupta, S.; Suresh, K. G. [Indian Institute of Technology, Department of Physics (India)

    2016-10-15

    The electronic structure and the optical properties of the HoCoSi and ErNiSi compounds are studied. Spin-polarized band calculations are performed in the local electron density approximation corrected for the strong electron–electron interactions in the 4f shell of a rare-earth ion (LSDA + U method [11]). The optical constants are measured by ellipsometry in a wide wavelength range, and the frequency dependences of a number of spectral parameters are determined. The calculated densities of states are used to interpret the structural features of the interband optical conductivities of the intermetallic compounds.

  7. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  8. Impact of Molecular Orientation and Packing Density on Electronic Polarization in the Bulk and at Surfaces of Organic Semiconductors

    KAUST Repository

    Ryno, Sean M.

    2016-05-16

    The polarizable environment surrounding charge carriers in organic semiconductors impacts the efficiency of the charge transport process. Here, we consider two representative organic semiconductors, tetracene and rubrene, and evaluate their polarization energies in the bulk and at the organic-vacuum interface using a polarizable force field that accounts for induced-dipole and quadrupole interactions. Though both oligoacenes pack in a herringbone motif, the tetraphenyl substituents on the tetracene backbone of rubrene alter greatly the nature of the packing. The resulting change in relative orientations of neighboring molecules is found to reduce the bulk polarization energy of holes in rubrene by some 0.3 eV when compared to tetracene. The consideration of model organic-vacuum interfaces highlights the significant variation in the electrostatic environment for a charge carrier at a surface although the net change in polarization energy is small; interestingly, the environment of a charge even just one layer removed from the surface can be viewed already as representative of the bulk. Overall, it is found that in these herringbone-type layered crystals the polarization energy has a much stronger dependence on the intralayer packing density than interlayer packing density.

  9. Electronic structure of ionic PbFCl-type compounds under pressure

    CERN Document Server

    Kanchana, V; Rajagopalan, M

    2003-01-01

    The electronic structures of alkaline-earth fluoro-halides - SrFBr, SrFI, and CaFBr, which crystallize in the PbFCl-type structure - have been studied using the tight-binding linear muffin-tin orbital method within the local density approximation. The total energies were calculated using the atomic sphere approximation and were used to determine the ground state properties of these systems. The calculated ground state properties agree fairly well with the experimental results. These systems were found to be direct band gap insulators. The pressure dependence of the band gap was also studied. The band gap closes at high pressures leading to band overlap. A possible reason for the metallization in these compounds is discussed.

  10. Hole crystallization in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bonitz, M [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Filinov, V S [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Fortov, V E [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Levashov, P R [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Fehske, H [Institut fuer Physik, Universitaet Greifswald, l7487 Greifswald (Germany)

    2006-04-28

    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  11. Hole crystallization in semiconductors

    OpenAIRE

    Bonitz, M.; Filinov, V. S.; Fortov, V. E.; Levashov, P. R.; Fehske, H.

    2005-01-01

    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. Applications of confocal laser scanning microscopy in research into organic semiconductor thin films

    DEFF Research Database (Denmark)

    Schiek, Manuela; Balzer, Frank

    2014-01-01

    At the center of opto-electronic devices are thin layers of organic semiconductors, which need to be sandwiched between planar electrodes. With the growing demand for opto-electronic devices now and in the future, new electrode materials are needed to meet the requirements of organic semiconductors....... Control of these interfaces directly impacts on the performance and here we show with basic growth studies of model compounds on dielectric and graphitic surfaces, the formation of distinctly textured films. Silver-nanowire meshes are presented as an alternative transparent electrode material. Confocal...

  14. Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation

    Science.gov (United States)

    Otani, Yohei; Fukuda, Yukio; Sato, Tetsuya; Nakagawa, Kiyokazu; Toyota, Hiroshi; Ono, Toshiro

    2008-09-01

    Electron-cyclotron-resonance (ECR) oxygen (O2) plasma was irradiated onto the surface of germanium (Ge) substrates prior to germanium nitride (GeNx) formation. Germanium metal-insulator-semiconductor (Ge-MIS) structures with a 5-nm-thick silicon nitride/2-nm-thick GeNx gate insulator stack fabricated by ECR plasma nitridation and sputtering deposition without substrate heating were electrically and physically characterized. Although ECR O2 plasma irradiation onto the surface of Ge substrates caused no significant difference in the chemical state of GeNx/Ge interfaces in X-ray photoemission spectroscopic measurement, irradiation for an appropriate period improved the state of GeNx/Ge interfaces and the electrical properties of Ge-MIS.

  15. Physical principles of the amplification of electromagnetic radiation due to negative electron masses in a semiconductor superlattice

    Science.gov (United States)

    Shorokhov, A. V.; Pyataev, M. A.; Khvastunov, N. N.; Hyart, T.; Kusmartsev, F. V.; Alekseev, K. N.

    2015-02-01

    In a superlattice placed in crossed static electric and magnetic fields, under certain conditions, the inversion of electron population can appear at which the average energy of electrons is above the middle of the mini-band and the effective mass of the electron is negative. This is the implementation of the negative effective mass amplifier and generator (NEMAG) in the superlattice. It can result in the amplification and generation of terahertz radiation even in the absence of negative differential conductivity.

  16. Electronic and mechanical properties of ordered (Pu, U) O2 compounds: A density functional theory +U study

    Science.gov (United States)

    Yang, Yu; Wang, Baotian; Zhang, Ping

    2013-02-01

    We have systematically studied the electronic and mechanical properties of the ordered binary PuxU1-xO2 compounds with x = 0.25, 0.5, and 0.75. It is found that both in antiferromagnetic and ferromagnetic states, the lattice constants and computed total energies of the mixed oxides (MOXs) obey the linear Vegard's law. Through electronic structure calculations, we reveal that the uranium and plutonium 5f electrons states do not overlap with each other, resulting in much smaller energy band gaps for MOX than UO2 and PuO2. At the mechanical side, our calculations indicate that all PuxU1-xO2 compounds satisfy the mechanical stability criteria, and the elastic constants and moduli of MOX are similar to that of UO2 and PuO2. The obtained Poisson's ratio for Pux U1-xO2 compounds is in good agreement with experimental results.

  17. Copolymer semiconductors comprising thiazolothiazole or benzobisthiazole, or benzobisoxazole electron acceptor subunits, and electron donor subunits, and their uses in transistors and solar cells

    Science.gov (United States)

    Jenekhe, Samson A; Subramaniyan, Selvam; Ahmed, Eilaf; Xin, Hao; Kim, Felix Sunjoo

    2014-10-28

    The inventions disclosed, described, and/or claimed herein relate to copolymers comprising copolymers comprising electron accepting A subunits that comprise thiazolothiazole, benzobisthiazole, or benzobisoxazoles rings, and electron donating subunits that comprise certain heterocyclic groups. The copolymers are useful for manufacturing organic electronic devices, including transistors and solar cells. The invention also relates to certain synthetic precursors of the copolymers. Methods for making the copolymers and the derivative electronic devices are also described.

  18. Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trapping and dynamic nuclear polarization

    NARCIS (Netherlands)

    Onur, A. R.; de Jong, J.P.; O'Shea, D.; Reuter, D.; Wieck, A. D.; Wal, van der C.H.

    2016-01-01

    We experimentally demonstrate how coherent population trapping (CPT) for donor-bound electron spins in GaAs results in autonomous feedback that prepares stabilized states for the spin polarization of nuclei around the electrons. CPT was realized by excitation with two lasers to a bound-exciton

  19. Comment on I. Lashkevych, O. Yu. Titov, and Yu. G. Gurevich, "Ohm's Law for a Bipolar Semiconductor: The Role of Carrier Concentration and Energy Nonequilibria" [J. Electron. Mater., 46, 585 (2017)

    Science.gov (United States)

    Swartz, C. H.

    2018-01-01

    In a recent publication [J. Electron. Mater., 46, 585 (2017)], a number of formulae are presented for the effective conductivity of a bipolar semiconductor sandwiched between two metal contacts. However, the results are shown to be nonphysical, and the explanation is traced to errors appearing in previous literature on the subject.

  20. Light-induced catalytic and cytotoxic properties of phosphorescent transition metal compounds with a d8 electronic configuration.

    Science.gov (United States)

    To, Wai-Pong; Zou, Taotao; Sun, Raymond Wai-Yin; Che, Chi-Ming

    2013-07-28

    Transition metal compounds are well documented to have diverse applications such as in catalysis, light-emitting materials and therapeutics. In the areas of photocatalysis and photodynamic therapy, metal compounds of heavy transition metals are highly sought after because they can give rise to triplet excited states upon photoexcitation. The long lifetimes (more than 1 μs) of the triplet states of transition metal compounds allow for bimolecular reactions/processes such as energy transfer and/or electron transfer to occur. Reactions of triplet excited states of luminescent metal compounds with oxygen in cells may generate reactive oxygen species and/or induce damage to DNA, leading to cell death. This article recaps the recent findings on photochemical and phototoxic properties of luminescent platinum(II) and gold(III) compounds both from the literature and experimental results from our group.

  1. Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam

    Science.gov (United States)

    Von Roos, O.

    1980-01-01

    The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

  2. IRIS Toxicological Review of Thallium and Compounds (External Review Draft)

    Science.gov (United States)

    Thallium compounds are used in the semiconductor industry, the manufacture of optic lenses and low-melting glass, low-temperature thermometers, alloys, electronic devices, mercury lamps, fireworks, and imitation germs, and clinically as an imaging agent in the diagnosis of certai...

  3. Electric-Field-Induced Nuclear Spin Resonance Mediated by Oscillating Electron Spin Domains in GaAs-Based Semiconductors

    OpenAIRE

    Kumada, N.; Kamada, T.; Miyashita, S.; Hirayama, Y.; Fujisawa, T.

    2008-01-01

    We demonstrate an alternative nuclear spin resonance using radio frequency (RF) electric field (nuclear electric resonance: NER) instead of magnetic field. The NER is based on the electronic control of electron spins forming a domain structure. The RF electric field applied to a gate excites spatial oscillations of the domain walls and thus temporal oscillations of the hyperfine field to nuclear spins. The RF power and burst duration dependence of the NER spectrum provides insight into the in...

  4. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  5. Analytical Model for Electronic Transport in Semiconductor Thin Films Modelo analítico para el transporte electrónico en películas delgadas semiconductoras

    Directory of Open Access Journals (Sweden)

    M Torres-Luengo

    2013-11-01

    Full Text Available Polycrystalline semiconductors are materials who often exhibit unusual electrical properties. In the model we assume that the crystals are composed of semiconductor material, the grain itself, which is surrounded by highly disordered and resistive materials, the grain boundary. The grainboundary disturbs the structural regularity of the crystal giving rise to localized electronic states within the energy gap. The existence of these states promotes the charge trapping at the grain boundaries and the bending of the energy bands. This bending is characterized by a potential barrier and a space charge zone which control the electron transport throughthe grain boundary. The model uses the diusion and drift carriers theories, and thermoionic emission, and the quantum tunneling of carriers through the potential barrier was also taken into consideration. Since the structure of the thin lms of molybdenum trioxide (MoO3 obtained through spray pyrolysis is granular and nanosize, the model described thebehavior of the current-voltage characteristic (I-V of the films.Los semiconductores policristalinos son materiales que a menudo presentan propiedades eléctricas inusuales. En el modelo se supone que los cristales están formados por material semiconductor, el grano en sí, el cual está rodeado por material altamente desordenado y resistivo, la frontera de grano. La frontera de grano perturba la periodicidad estructural del cristal dando origen a estados electrónicos localizados en el interior de la brecha de energía prohibida. La existencia de estos estados favorece el atrapamiento de carga en las fronteras de grano y al doblamiento de las bandas de energía. Este doblamiento se caracteriza por un potencial de barrera y una zona de carga espacial, las cuales gobiernan el transporte electrónico a través de la frontera de grano. El modelo utiliza las teorías de difusión y deriva de portadores, de emisión termoiónica e incluye adem

  6. Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Fukui, Takashi; Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro

    2012-01-01

    We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metal-organic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We form a 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.

  7. Correlation between structural and transport properties of electron beam irradiated PrMnO3 compounds

    Science.gov (United States)

    Christopher, Benedict; Rao, Ashok; Nagaraja, B. S.; Shyam Prasad, K.; Okram, G. S.; Sanjeev, Ganesh; Petwal, Vikash Chandra; Verma, Vijay Pal; Dwivedi, Jishnu; Poornesh, P.

    2018-02-01

    The structural, electrical, magnetic, and thermal properties of electron beam (EB) irradiated PrMnO3 manganites were investigated in the present communication. X-ray diffraction data reveals that all samples are single phased with orthorhombic distorted structure (Pbnm). Furthermore, the diffracted data are analyzed in detail using Rietveld refinement technique. It is observed that the EB dosage feebly disturbs the MnO6 octahedra. The electrical resistivity of all the samples exhibits semiconducting behavior. Small polaron hopping model is conveniently employed to investigate the semiconducting nature of the pristine as well as EB irradiated samples. The Seebeck coefficient (S) of the pristine as well as the irradiated samples exhibit large positive values at lower temperatures, signifying holes as the dominant charge carriers. The analysis of Seebeck coefficient data confirms that the small polaron hopping mechanism assists the thermoelectric transport property in the high temperature region. The magnetic measurements confirm the existence of paramagnetic (PM) to ferromagnetic (FM) behavior for the pristine and irradiated samples. In the lower temperature regime, coexistence of FM clusters and AFM matrix is dominating. Thus, the complex magnetic behavior of the compound has been explained in terms of rearrangement of antiferromagnetically coupled ionic moments.

  8. The importance of the on-site electron-electron interaction for the magnetic coupling in the zigzag spin-chain compound In2VO5

    KAUST Repository

    Wang, Hao

    2010-09-27

    We present first-principles electronic structure calculations for the zigzag spin-chain compound In2VO5 using the generalized gradient approximation both with and without inclusion of an on-site Coulomb interaction. It has been proposed that In2VO5 is characterized by itinerant V 3d electrons at high temperature and localized electrons at low temperature. Consequently, it is to be expected that electronic correlations play an important role for the magnetic transition from ferromagnetic to antiferromagnetic exchange around 120 K. In this context, we study the electronic and magnetic properties of a set of possible spin configurations. Our calculations show that inclusion of an on-site Coulomb interaction in fact changes the ground state from ferromagnetic to antiferromagnetic. © 2010 IOP Publishing Ltd.

  9. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance–voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of ‑20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10‑7 mA mm‑1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  10. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  11. Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

    Science.gov (United States)

    Bhowmik, R. N.; Venkata Siva, K.; Ranganathan, R.; Mazumdar, Chandan

    2017-06-01

    The samples of Ga-doped Cr2O3 have been prepared using chemical co-precipitation route. X-ray diffraction pattern and Raman spectra have indicated rhombohedral crystal structure with space group R 3 bar C. Magnetic measurements indicated diluted antiferromagnetic (AFM) spin order in Ga-doped α-Cr2O3 and ferrimagnetic ordering of spins at about 50-60 K is confirmed from the analysis of the temperature dependence of dc magnetization and ac susceptibility data. Apart from magnetic dilution effect, the samples have shown superparamagnetic behavior below 50 K due to frustrated surface spins of the nano-sized grains. The samples have shown non-linear electronic properties. The current-voltage (I-V) characteristics of the Ga-doped α-Cr2O3 samples are remarkably different from α-Cr2O3 sample. The bi-stable electronic states and negative differential resistance are some of the unique non-linear electronic properties that the I-V curves of Ga-doped samples have exhibited. Optical study revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. The results indicated multi-level electronic structure in Ga-doped α-Cr2O3 system.

  12. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  13. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  14. Electronic Structure and Thermodynamic Properties of the Cubic Antiperovskite Compound InNCe3 via First-Principles Calculations

    Science.gov (United States)

    Bettahar, N.; Nasri, D.; Benalia, S.; Merabet, M.; Abidri, B.; Benkhettou, N.; Khenata, R.; Rached, D.; Rabah, M.

    2013-03-01

    Elastic, thermodynamic, electronic, and magnetic properties in the cubic antiperovskite InNCe3 compound are derived from the full-potential linear muffin-tin orbital method. From the computed elastic constants, theoretical values of Young's modulus, the shear modulus, Poisson's ratio, Lamé's coefficients, sound velocities, and the Debye temperature are evaluated. Analysis of the ratio between the bulk modulus and the shear modulus shows that InNCe3 is brittle in nature. The variations of elastic constants with pressure indicate that this compound possesses higher mechanical stability in the pressure range from 0 to 40 GPa. The electronic and magnetic properties of this compound are calculated by adding the Coulomb interaction U to improve the results.

  15. Structural, electronic and elastic properties of REIr{sub 2} (RE=La and Ce) Laves phase compounds

    Energy Technology Data Exchange (ETDEWEB)

    Shrivastava, Deepika, E-mail: deepika89shrivastava@gmail.com; Fatima, Bushra; Sanyal, Sankar P. [Department of Physics, Barkatullah University, Bhopal, 462026 (India)

    2016-05-23

    REIr{sub 2} (RE = La and Ce) Laves phase intermetallic compounds were investigated with respect to their structural, electronic and elastic properties using full potential linearized augmented plane wave (FP-LAPW) method within generalized gradient approximation (GGA) as implemented in WIEN2k code. The ground state properties such as lattice constants (a{sub 0}), bulk modulus (B), pressure derivative of bulk modulus (B′) and density of state at Fermi level N(E{sub F}) have been obtained by optimization method. The electronic structure (BS, TDOS and PDOS) reveals that these Laves phase compounds are metallic in nature. The calculated elastic constants indicate that these compounds are mechanically stable at ambient pressure and found to be ductile in nature.

  16. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se{sub 2} semiconductors for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Baier, Robert

    2012-06-25

    Solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10{sup 11} cm{sup -2} and ∼2.1 x 10{sup 12} cm{sup -2} were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the

  17. Electric field induced nuclear spin resonance mediated by oscillating electron spin domains in GaAs-based semiconductors.

    Science.gov (United States)

    Kumada, N; Kamada, T; Miyashita, S; Hirayama, Y; Fujisawa, T

    2008-09-26

    We demonstrate an alternative nuclear spin resonance using a radio frequency (rf) electric field [nuclear electric resonance (NER)] instead of a magnetic field. The NER is based on the electronic control of electron spins forming a domain structure. The rf electric field applied to a gate excites spatial oscillations of the domain walls and thus temporal oscillations of the hyperfine field to nuclear spins. The rf power and burst duration dependence of the NER spectrum provides insight into the interplay between nuclear spins and the oscillating domain walls.

  18. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  19. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  20. Electronic Correlations, Jahn-Teller Distortions and Mott Transition to Superconductivity in Alkali-C60 Compounds

    Directory of Open Access Journals (Sweden)

    Alloul H.

    2012-03-01

    Full Text Available The discovery in 1991 of high temperature superconductivity (SC in A3C60 compounds, where A is an alkali ion, has been rapidly ascribed to a BCS mechanism, in which the pairing is mediated by on ball optical phonon modes. While this has lead to consider that electronic correlations were not important in these compounds, further studies of various AnC60 with n=1, 2, 4 allowed to evidence that their electronic properties cannot be explained by a simple progressive band filling of the C60 six-fold degenerate t1u molecular level. This could only be ascribed to the simultaneous influence of electron correlations and Jahn-Teller Distortions (JTD of the C60 ball, which energetically favour evenly charged C60 molecules. This is underlined by the recent discovery of two expanded fulleride Cs3C60 isomeric phases which are Mott insulators at ambient pressure. Both phases undergo a pressure induced first order Mott transition to SC with a (p, T phase diagram displaying a dome shaped SC, a common situation encountered nowadays in correlated electron systems. NMR experiments allowed us to study the magnetic properties of the Mott phases and to evidence clear deviations from BCS expectations near the Mott transition. So, although SC involves an electron-phonon mechanism, the incidence of electron correlations has an importance on the electronic properties, as had been anticipated from DMFT calculations.

  1. Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Duke, C.B. [Xerox Webster Research Center, NY (United States)

    1993-07-01

    During the two decades 1974-93, semiconductor surface structure determination has evolved into a routine tool. This rapid evolution resulted from the confluence of three factors: the development of new techniques (e.g., scanning tunneling microscopy) and the improvement of old ones (e.g., low-energy electron diffraction), greatly increased reliability of vacuum equipment and electronics, and orders of magnitude enhancement in the speed and cost effectiveness of digital computers. A critical role of the annual conferences on the physics and chemistry of semiconductor interfaces (PCSI) in this evolution was to focus the attention of researchers on surface and interface structure as the key measurable intermediary between electronic materials processing and the performance of the resulting devices. Studies of several important systems, e.g., the (110) cleavage faces and (100) molecular-beam epitaxy growth faces of zinc blende structure compound semiconductors, were driven by events reported at PCSI conferences. These conferences were instrumental in stimulating the development of theoretical models which could extrapolate between vacuum surfaces, for which structural data have become readily available, and semiconductor heterostructures, for which comparable data are only now beginning to appear. Because of this development, the insight developed for vacuum surfaces is currently being applied to the prediction of interface specific electronic properties of semiconductor heterostructures (e.g., band offsets in heterojunctions and Schottky barrier heights in epitaxical metal-semiconductor junctions). In this way the PCSI conferences have forged a link between the surface science of semiconductors and the fabrication of microelectronic devices so that both evolve faster than either one would have otherwise. This article documents some specific examples of the nature and consequences of this process. 164 refs., 9 figs.

  2. Physics of semiconductor laser devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, G.H.B.

    1980-01-01

    Aspects of laser design and development are considered along with semiconductor materials for lasers, problems of device fabrication, crystal growth, the degradation of lasers, and the integration of semiconductor lasers with other optical components. A description is presented of light emission processes and laser action in semiconductors, taking into account electronic radiative transitions, the relation between emission and absorption processes, transition probabilities, the density of electron states in the highly doped semiconductor, carrier recombination and spontaneous emission, the gain/current relation, light-current characteristics, optical modes, and the evolution of mode spectrum and intensity with current. Attention is given to laser heterostructures and the properties of heterojunctions, optical waveguides, the performance of heterostructure lasers, stripe geometry lasers, and the dynamic response of lasers. Lasers with distributed feedback and Bragg reflectors are also discussed.

  3. Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

    Energy Technology Data Exchange (ETDEWEB)

    Genderen, E. van; Clabbers, M. T. B. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Das, P. P. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Stewart, A. [Department of Physics and Energy, Materials and Surface Science Institute (MSSI), University of Limerick, Limerick (Ireland); Nederlof, I. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Amsterdam Scientific Instruments, Postbus 41882, 1009 DB Amsterdam (Netherlands); Barentsen, K. C. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Portillo, Q. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Centres Científics i Tecnològics de la Universitat de Barcelona, University of Barcelona, Carrer de Lluís Solé i Sabaris, 1-3, Barcelona (Spain); Pannu, N. S. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Nicolopoulos, S. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Gruene, T., E-mail: tim.gruene@psi.ch [Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland); Abrahams, J. P., E-mail: tim.gruene@psi.ch [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland)

    2016-02-05

    A specialized quantum area detector for electron diffraction studies makes it possible to solve the structure of small organic compound nanocrystals in non-cryo conditions by direct methods. Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e{sup −} Å{sup −2} s{sup −1}) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014)

  4. Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography

    DEFF Research Database (Denmark)

    Cooper, David; Rivallin, Pierrette; Hartmann, Jean-Michel

    2009-01-01

    Silicon specimens containing p-n junctions have been prepared for examination by off-axis electron holography using focused ion beam (FIB) milling. FIB milling modifies the surfaces of the specimens due to gallium implantation and the creation of defects which has the effect of reducing the active...

  5. Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

    DEFF Research Database (Denmark)

    Kovács, András; Sadowski, J; Kasama, Takeshi

    2011-01-01

    suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope...

  6. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

    Science.gov (United States)

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

    2013-12-01

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  7. Reversible switching between p- and n-type conduction in the semiconductor Ag10Te4Br3.

    Science.gov (United States)

    Nilges, Tom; Lange, Stefan; Bawohl, Melanie; Deckwart, Jens Markus; Janssen, Martin; Wiemhöfer, Hans-Dieter; Decourt, Rodolphe; Chevalier, Bernard; Vannahme, Julia; Eckert, Hellmut; Weihrich, Richard

    2009-02-01

    Semiconductors are key materials in modern electronics and are widely used to build, for instance, transistors in integrated circuits as well as thermoelectric materials for energy conversion, and there is a tremendous interest in the development and improvement of novel materials and technologies to increase the performance of electronic devices and thermoelectrics. Tetramorphic Ag(10)Te(4)Br(3) is a semiconductor capable of switching its electrical properties by a simple change of temperature. The combination of high silver mobility, a small non-stoichiometry range and an internal redox process in the tellurium substructure causes a thermopower drop of 1,400 microV K(-1), in addition to a thermal diffusivity in the range of organic polymers. The capability to reversibly switch semiconducting properties from ionic to electronic conduction in one single compound simply by virtue of temperature enables novel electronic devices such as semiconductor switches.

  8. Helium like impurity in CdTe/ Cd1-xMnxTe semimagnetic semiconductors under magnetic field: Dimensionality effect on electron - Electron interaction

    Science.gov (United States)

    Kalpana, Panneer Selvam; Jayakumar, Kalyanasundaram

    2017-11-01

    We study the effect of magnetic field on the Coulomb interaction between the two electrons confined inside a CdTe/Cd1-xMnxTe Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD) for the composition of Mn2+ ion, x = 0.3. The two particle Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the applied magnetic field tremendously alters the Coulomb interaction of the electrons and their binding to the donor impurity by shrinking the spatial extension of the two particle wavefunction and leads to tunnelling through the barrier. The qualitative phenomenon involved in such variation of electron - electron interaction with the magnetic field has also been explained through the 3D - plot of the probability density function.

  9. Analyzing the flavor compounds in Chinese traditional fermented shrimp pastes by HS-SPME-GC/MS and electronic nose

    Science.gov (United States)

    Fan, Yan; Yin, Li'ang; Xue, Yong; Li, Zhaojie; Hou, Hu; Xue, Changhu

    2017-04-01

    Shrimp paste is a type of condiments with high nutritional value. However, the flavors of shrimp paste, particularly the non-uniformity flavors, have limited its application in food processing. In order to identify the characteristic flavor compounds in Chinese traditional shrimp pastes, five kinds of typical commercial products were evaluated in this study. The differences in the volatile composition of the five products were investigated. Solid phase micro-extraction method was employed to extract the volatile compounds. GC-MS and electronic nose were applied to identify the compounds, and the data were analyzed using principal component analysis (PCA). A total of 62 volatile compounds were identified, including 8 alcohols, 7 aldehydes, 3 ketones, 7 ethers, 7 acids, 3 esters, 6 hydrocarbons, 12 pyrazines, 2 phenols, and 7 other compounds. The typical volatile compounds contributing to the flavor of shrimp paste were found as follows: dimethyl disulfide, dimethyl tetrasulfide, dimethyl trisulfide, 2, 3, 5-trimethyl-6-ethyl pyrazine, ethyl-2, 5-dimethyl-pyrazine, phenol and indole. Propanoic acid, butanoic acid, furans, and 2-hydroxy-3-pentanone caused unpleasant odors, such as pungent and rancid odors. Principal component analysis showed that the content of volatile compounds varied depending on the processing conditions and shrimp species. These results indicated that the combinations of multiple analysis and identification methods could make up the limitations of a single method, enhance the accuracy of identification, and provide useful information for sensory research and product development.

  10. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  11. Nonlinear Optical Interactions in Semiconductors.

    Science.gov (United States)

    1985-12-10

    Physique du Solide et Energie Solaire We had on-going interaction with Dr. Christian Verie on the growth of high quality narrow-gap semiconductor crystals...The band gap energy of the semiconductor decreases with increasing temperature. Consequently, the absorption of light in the energy region of the...gas and, more importantly, will modulate the electron energy at the difference frequency, wI - 02" Under ordinary circumstances such an energy (or

  12. Electronic structure studies of ferro-pnictide superconductors and their parent compounds using angle-resolved photoemission spectroscopy (ARPES)

    Energy Technology Data Exchange (ETDEWEB)

    Setti, Thirupathaiah

    2011-07-14

    The discovery of high temperature superconductivity in the iron pnictide compound LaO{sub 1-x}F{sub x}FeAs with T{sub c} = 26 K as created enormous interest in the high-T{sub c} superconductor community. So far, four prototypes of crystal structures have been found in the Fe-pnictide family. All four show a structural deformation followed or accompanied by a magnetic transition from a high temperature paramagnetic conductor to a low temperature antiferromagnetic metal whose transition temperature T{sub N} varies between the compounds. Charge carrier doping, isovalent substitution of the As atoms or the application of pressure suppresses the antiferromagnetic spin density wave (SDW) order and leads to a superconducting phase. More recently high Tc superconductivity has been also detected in iron chalchogenides with similar normal state properties. Since superconductivity is instability of the normal state, the study of normal state electronic structure in comparison with superconducting state could reveal important information on the pairing mechanism. Therefore, it is most important to study the electronic structure of these new superconductors, i.e., to determine Fermi surfaces and band dispersions near the Fermi level at the high symmetry points in order to obtain a microscopic understanding of the superconducting properties. Using the technique angle-resolved photoemission spectroscopy (ARPES) one measures the electrons ejected from a sample when photons impinge on it. In this way one can map the Fermi surface which provides useful information regarding the physics behind the Fermi surface topology of high T{sub c} superconductors. Furthermore, this technique provides information on the band dispersion, the orbital character of the bands, the effective mass, the coupling to bosonic excitations, and the superconducting gap. This emphasizes the importance of studying the electronic structure of the newly discovered Fe-pnictides using ARPES. In this work we have

  13. Strain at a semiconductor nanowire-substrate interface studied using geometric phase analysis, convergent beam electron diffraction and nanobeam diffraction

    DEFF Research Database (Denmark)

    Persson, Johan Mikael; Wagner, Jakob Birkedal; Dunin-Borkowski, Rafal E.

    2011-01-01

    films. This sample preparation method is fast and usually results in little structural change in the nanowires [2]. However, it does not provide information about the interface between the nanowires and the substrate, who’s physical and electrical properties are important for many modern applications...... of nanowires. In particular, strain and crystallographic defects can have a major influence on the electronic structure of the material. In improved method for the characterization of such interfaces would be valuable for optimizing and understanding the transport properties of devices based on nanowires. Here......, we systematically investigate the interface between a nanowire and its substrate using three complementary methods for assessing strain. Results obtained using high resolution TEM for geometric phase analysis (GPA), convergent beam elecron diffraction (CBED) and nanobeam electron diffraction (NBED...

  14. Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yi; He, Bo; Pun, Andrew

    2015-11-24

    A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

  15. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    groundwork for future studies on all-Heusler heterostructures . 2 UNIVERSITY of CALIFORNIA Santa Barbara Epitaxial growth, surface, and electronic...Schultz, and C. J. Palmstrøm. Growth and transport properties of epitaxial lattice matched Half Heusler Co- TiSb/InAlAs/InP(001) heterostructures . Appl...and nanowires via directed electrochemical nanowire assembly. Nano Lett., 11, 191901 (2011). 5. N. Ferralis, J. K. Kawasaki, R. Maboudian, and C

  16. Hyperfine Interactions in the Electron Paramagnetic Resonance Spectra of Point Defects in Wide-Band-Gap Semiconductors

    Science.gov (United States)

    2014-09-18

    between the 5s electron and the silver nucleus. Breit and Rabi [5] described this hyperfine interaction in the context of the Stern-Gerlach...experiment, and Rabi et al. [6] were the first to directly measure nuclear magnetic moments with this beam technique [7]. 1 quantum angular momentum or spin...is an interruption in the periodicity of a crystal lattice that is localized within a few lattice sites. A crystal lattice is composed of a Bravais

  17. Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

    Science.gov (United States)

    Liu, Yi; He, Bo; Pun, Andrew

    2016-04-19

    A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

  18. Electron-rich anthracene semiconductors containing triarylamine for solution-processed small-molecule organic solar cells.

    Science.gov (United States)

    Choi, Hyeju; Ko, Haye Min; Cho, Nara; Song, Kihyung; Lee, Jae Kwan; Ko, Jaejung

    2012-10-01

    New electron-rich anthracene derivatives containing triarylamine hole stabilizers, 2,6-bis[5,5'-bis(N,N'-diphenylaniline)-2,2'-bithiophen-5-yl]-9,10-bis-[(triisopropylsilyl)ethynyl]anthracene (TIPSAntBT-TPA) and 2,6-bis(5,5'-bis{4-[bis(9,9-dimethyl-9H-fluoren-2-yl)amino]phenyl}-2,2'-bithiophen-5-yl)-9,10-bis-[(triisopropylsilyl)ethynyl]anthracene (TIPSAntBT-bisDMFA), linked with π-conjugated bithiophene bridges, were synthesized and their photovoltaic characteristics were investigated in solution-processed small-molecule organic solar cells (SMOSCs). These new materials exhibited superior intramolecular charge transfer from triarylamine to anthracene, leading to a more electron-rich anthracene core that facilitated electron transfer into phenyl-C(61)-butyric acid methyl ester. Compared with TIPSAntBT and triarylamine, these materials show a threefold improvement in hole-transporting properties and better photovoltaic performance in solution-processed SMOSCs, with the best power conversion efficiency being 2.96 % at a high open-circuit voltage of 0.85 V. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Stability and Elastic, Electronic, and Thermodynamic Properties of Fe2TiSi1- x Sn x Compounds

    Science.gov (United States)

    Jong, Ju-Yong; Yan, Jihong; Zhu, Jingchuan; Kim, Chol-Jin

    2017-10-01

    We have systematically studied the structural, phase, and mechanical stability and elastic, electronic, and thermodynamic properties of Fe2TiSi1- x Sn x ( x = 0, 0.25, 0.5, 0.75, 1) compounds using first-principles calculations. The structural and phase stability and elastic properties of Fe2TiSi1- x Sn x ( x = 0, 0.25, 0.5, 0.75, 1) indicated that all of the compounds are thermodynamically and mechanically stable. The shear modulus, bulk modulus, Young's modulus, Poisson's ratio, electronic band structure, density of states, Debye temperature, and Grüneisen parameter of all the substituted compounds were studied. The results show that Sn substitution in Fe2TiSi enhances its stability and mechanical and thermoelectric properties. The Fe2TiSi1- x Sn x compounds have narrow bandgap from 0.144 eV and 0.472 eV for Sn substitution from 0 to 1. The calculated band structure and density of states (DOS) of Fe2TiSi1- x Sn x show that the thermoelectric properties can be improved at substituent concentration x of 0.75. The lattice thermal conductivity was significantly decreased in the Sn-substituted compounds, and all the results indicate that Fe2TiSi0.25Sn0.75 could be a new candidate high-performance thermoelectric material.

  20. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    growth of p-type layers, ferromagnetic behaviour in transition-metal doped oxide is also fuelling renewed interest from the spintronic point of view. Since some of the related reports remain controversial, a critical discussion of the magnetic properties of these doped oxides is made by Fukumura et al. Before the observation of electro-luminescence from the ZnO p-n homojunction reported by Tsukazaki et al (2005 Nature Mater. 4 42), the afore-mentioned advantages have been explored and exploited by alternative methods, such as heteroepitaxy in which p-n heterostructures can be obtained by depositing n-type ZnO films on other p-type oxides while still utilizing ZnO as their active layer. Researchers in Hosono's group observed the high-intensity band-edge emission from such heterostructures for the first time (Ohta H et al 2000 Appl. Phys. Lett. 77 475). They have also successfully extended their research fields to the development of a transparent oxide transistor based on homologous compounds, which is reviewed by Kamiya and Hosono in this special issue. As can be seen from these demonstrations, the advantage of oxides is, of course, based on the fact that many elements in the periodic table can form compounds with oxygen. Since the discovery of high-temperature superconductors, these multi-component oxides have exploited the new field known as the science of strongly correlated-electron materials, whose recent progress is reviewed by Inoue. Although the collection of papers included in this special issue covers a good cross-section of the development of oxide semiconductors and correlated-electron oxides to date, this is not meant to be exhaustive. There are a number of unavoidable omissions, such as theoretical studies except for some theoretical predictions on the room-temperature Bose-Einstein condensation of exciton-polaritons found in the article by Chichibu et al. We hope this issue promotes further development of this exciting field. The guest editors would like to

  1. Ultrafast Relaxation Dynamics of Photoexcited Heme Model Compounds: Observation of Multiple Electronic Spin States and Vibrational Cooling.

    Science.gov (United States)

    Govind, Chinju; Karunakaran, Venugopal

    2017-04-13

    Hemin is a unique model compound of heme proteins carrying out variable biological functions. Here, the excited state relaxation dynamics of heme model compounds in the ferric form are systematically investigated by changing the axial ligand (Cl/Br), the peripheral substituent (vinyl/ethyl-meso), and the solvent (methanol/DMSO) using femtosecond pump-probe spectroscopy upon excitation at 380 nm. The relaxation time constants of these model compounds are obtained by global analysis. Excited state deactivation pathway of the model compounds comprising the decay of the porphyrin excited state (S*) to ligand to metal charge transfer state (LMCT, τ 1 ), back electron transfer from metal to ligand (MLCT, τ 2 ), and relaxation to the ground state through different electronic spin states of iron (τ 3 and τ 4 ) are proposed along with the vibrational cooling processes. This is based on the excited state absorption spectral evolution, similarities between the transient absorption spectra of the ferric form and steady state absorption spectra of the low-spin ferrous form, and the data analysis. The observation of an increase of all the relaxation time constants in DMSO compared to the methanol reflects the stabilization of intermediate states involved in the electronic relaxation. The transient absorption spectra of met-myoglobin are also measured for comparison. Thus, the transient absorption spectra of these model compounds reveal the involvement of multiple iron spin states in the electronic relaxation dynamics, which could be an alternative pathway to the ground state beside the vibrational cooling processes and associated with the inherent features of the heme b type.

  2. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear......In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... is determined by (but not equal to) the electron momentum relaxation rate. Single cycle pulses of light, irrespective of the frequency range to which they belong, inherently have an ultrabroadband spectrum covering many octaves of frequencies. Unlike the single-cycle pulses in optical domain, the THz pulses can...... be easily sampled with sub-cycle resolution using conventional femtosecond lasers. This makes the THz pulses accessible model tools for direct observation of general nonlinear optical phenomena occurring in the single-cycle regime....

  3. A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds

    Science.gov (United States)

    Tas, M.; Şaşıoğlu, E.; Friedrich, C.; Galanakis, I.

    2017-11-01

    Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic and magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the GW approximation to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of GW self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.

  4. Semiconductor surface physics research in the Space Shuttle orbit

    Energy Technology Data Exchange (ETDEWEB)

    Lindau, I.; Spicer, W.E.

    1977-11-01

    The prospects for surface physics research on semiconductors with the Space Shuttle are summarized. The effect of residual gases and solar radiation outside the Shuttle on the semiconductor-surface electronic properties are assessed.

  5. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-04-15

    The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

  6. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

    Science.gov (United States)

    Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

    2015-03-25

    The electronic structure of low temperature, solution-processed indium-zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm(2) V(-1) s(-1) is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.

  7. Energy gaps, electronic structures, and x-ray spectroscopies of finite semiconductor single-walled carbon nanotubes.

    Science.gov (United States)

    Gao, Bin; Jiang, Jun; Wu, ZiYu; Luo, Yi

    2008-02-28

    We report hybrid density functional theory calculations for electronic structures of hydrogen-terminated finite single-walled carbon nanotubes (6,5) and (8,3) up to 100 nm in length. Gap states that are mainly arisen from the hydrogen-terminated edges have been found in (8,3) tubes, but their contributions to the density of states become invisible when the tube is longer than 10 nm. The electronic structures of (6,5) and (8,3) tubes are found to be converged around 20 nm. The calculated band-gap energies of 100 nm long nanotubes are in good agreement with experimental results. The valence band structures of (6,5), (8,3), as well as (5,5) tubes are also investigated by means of ultraviolet photoelectron spectra (UPS), x-ray emission spectroscopy (XES), and the resonant inelastic x-ray scattering (RIXS) spectra theoretically. The UPS, XES and RIXS spectra become converged already at 10 nm. The length-dependent oscillation behavior is found in the RIXS spectra of (5,5) tubes, indicating that the RIXS spectra may be used to determine the size and length of metallic nanotubes. Furthermore, the chiral dependence observed in the simulated RIXS spectra suggests that RIXS spectra could be a useful technique for the determination of chirality of carbon nanotubes.

  8. Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Tokuda, Hirokuni; Asubar, Joel T.; Kuzuhara, Masaaki

    2017-10-01

    We present an analytical expression of sub-threshold swing (SS) in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs), and describe dependences of SS on structural and relevant material parameters of the MIS-HEMTs. In this work, we derived two different equations where interface states reside at the dielectric/AlGaN interface (proposed equation) and at the AlGaN/GaN interface (conventional equation), which is the customary assumption in the literature. Analysis indicates that SS calculated by using conventional equation is always higher than that calculated by using proposed equation. To confirm the validity of the proposed equation, AlGaN/GaN MIS-HEMTs with and without recess etched gate structure are fabricated and their corresponding interface state densities are derived directly from the measured SS. The MIS-HEMTs with recess show higher SS than those without recess, which is attributed to the increase of interface state density, probably due to the damage introduced during the etching process.

  9. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  10. EFFECTIVENESS OF ELECTROSTATIC SHIELDING AND ELECTRONIC SUBTRACTION TO CORRECT FOR THE HOLE TRAPPING IN CDZNTE SEMICONDUCTOR DETECTORS.

    Energy Technology Data Exchange (ETDEWEB)

    BOLOTNIKOV,A.E.; CAMARDA, G.S.; HOSSAIN, A.; CUI, Y.; JAMES, R.B.

    2007-08-26

    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the driR and induction regions. The former determines the ''geometrical'' width of the photopeak i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  11. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures

    CERN Document Server

    Shah, Jagdeep

    1996-01-01

    Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Ultrafast spectroscopy of semiconductors is currently one of the most exciting areas of research in condensed-matter physics Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors This monograph presents some of the most striking recent advances in the field of ultrafast spectroscopy of semiconductors and their nanostructures After a brief overview of the basic concepts and of the recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy, it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses

  12. First-principle investigation of structural, electronic and magnetic properties of Co2VIn and CoVIn Heusler compounds

    Science.gov (United States)

    Zipporah, Muthui; Rohit, Pathak; Robinson, Musembi; Julius, Mwabora; Ralph, Skomski; Arti, Kashyap

    2017-05-01

    Investigation of the structural, electronic and magnetic properties of full-Heusler Co2VIn as well as half-Heusler CoVIn Cobalt based Heusler compounds using density functional theory (DFT) leads to the general conclusion that Co2VIn and CoVIn are half-metallic materials with a gap at the Fermi level in the minority states and majority states respectively. A Hubbard-like Coulomb correlation term U has been included in the DFT (DFT+U) for the computation of the electronic and magnetic properties of the compounds. The structural properties have been calculated for the paramagnetic and ferromagnetic phases, and both Co2VIn and CoVIn are found to be stable in the ferromagnetic phase. The calculated magnetic moments are 2 μB and 0.9 μB per formula unit for Co2VIn and CoVIn respectively.

  13. In situ UV-visible absorption during spin-coating of organic semiconductors: A new probe for organic electronics and photovoltaics

    KAUST Repository

    Abdelsamie, Maged

    2014-01-01

    Spin-coating is the most commonly used technique for the lab-scale production of solution processed organic electronic, optoelectronic and photovoltaic devices. Spin-coating produces the most efficient solution-processed organic solar cells and has been the preferred approach for rapid screening and optimization of new organic semiconductors and formulations for electronic and optoelectronic applications, both in academia and in industrial research facilities. In this article we demonstrate, for the first time, a spin-coating experiment monitored in situ by time resolved UV-visible absorption, the most commonly used, simplest, most direct and robust optical diagnostic tool used in organic electronics. In the first part, we successfully monitor the solution-to-solid phase transformation and thin film formation of poly(3-hexylthiophene) (P3HT), the de facto reference conjugated polymer in organic electronics and photovoltaics. We do so in two scenarios which differ by the degree of polymer aggregation in solution, prior to spin-coating. We find that a higher degree of aggregation in the starting solution results in small but measurable differences in the solid state, which translate into significant improvements in the charge carrier mobility of organic field-effect transistors (OFET). In the second part, we monitor the formation of a bulk heterojunction photoactive layer based on a P3HT-fullerene blend. We find that the spin-coating conditions that lead to slower kinetics of thin film formation favour a higher degree of polymer aggregation in the solid state and increased conjugation length along the polymer backbone. Using this insight, we devise an experiment in which the spin-coating process is interrupted prematurely, i.e., after liquid ejection is completed and before the film has started to form, so as to dramatically slow the thin film formation kinetics, while maintaining the same thickness and uniformity. These changes yield substantial improvements to the

  14. Enhancement of Electron Transfer in Various Photo-Assisted Oxidation Processes for Nitro-Phenolic Compound Conversion

    Science.gov (United States)

    Khue, Do Ngoc; Lam, Tran Dai; Minh, Do Binh; Loi, Vu Duc; Nam, Nguyen Hoai; Bach, Vu Quang; Van Anh, Nguyen; Van Hoang, Nguyen; Hu'ng, Dao Duy

    2016-08-01

    The present study focuses on photo-assisted advanced oxidation processes (AOPs) with strongly enhanced electron transfer for degradation of nitro-phenolic compounds in aqueous medium. The effectiveness of these processes was estimated based on the pseudo-first order rate constant k determined from high-performance liquid chromatography. The degradation of four different nitro-phenolic compounds was systematically studied using selected AOPs; these four compounds were nitrophenol, dinitrophenol, trinitrophenol and trinitroresorcin. It was observed that the combination of ultraviolet light with hydrogen peroxide H2O2 enhanced and maintained hydroxyl radicals, and therefore increased the conversion yield of organic pollutants. These AOPs provided efficient and green removal of stable organic toxins found in a wide range of industrial wastewater.

  15. Mechanical and electronic properties of antiperovskite Ti-based compounds AXTi3 (X = C, N): A first-principles investigation

    Science.gov (United States)

    Wang, Ni-Na; Shao, Ding-Fu; Lu, Wen-Jian; Lu, Hong-Yan

    2016-01-01

    In this paper, we systematically studied the mechanical and electronic properties of a series of antiperovskite-type Ti-based ternary carbides and nitrides AXTi3 (A = Ba, Ca, In, Sn, Sr, Zn, Cu, Al, Ga, Cd, and La; X = C, N) from first-principles calculations. By calculating the formation energies, elastic constants, and other mechanical parameters, we predicted that 7 carbides ACTi3 and 7 nitrides ANTi3 compounds are stable among the 22 compounds. The predicted large Young's modulus and high hardness imply a good mechanical application prospect of AXTi3. Particularly, SnNTi3 was found to show ferromagnetic ground state. For the electronic structure, our results confirm that the compounds are metallic in nature, and the density of states near the Fermi energy is predominately contributed by Ti-3d states. The effect of A- and X-site atom doping on AXTi3 can be evaluated by rigid band approximation. Our prediction will be useful for the experimental exploration of the new antiperovskite compounds.

  16. Electronic structure and magnetism of layered compounds SrBO2 (B = Ni, Co, Mn): A theoretical investigation

    Science.gov (United States)

    Rahman, Mavlanjan; Zhou, Ke-Chao; Nie, Yao-Zhuang; Guo, Guang-Hua

    2017-10-01

    We investigate the electronic structure and magnetic properties of layered compounds SrBO2 (B = Co, Ni, Mn) based on first principles calculations in the framework of density functional theory with GGA+U method. We compute the phonon dispersion of these compounds to probe the dynamical stability and find that all the compounds are dynamically stable. SrCoO2 and SrNiO2 are G-type antiferromagnetic insulators, and SrMnO2 is an A-type antiferromagnetic conductor. The electronic configurations of 3d orbitals are (dxz)2(dz2)2(dyz)1(dxy)1(dx2-y2)1 and (dxz)2(dyz)2(dz2)2(dxy)1(dx2-y2)1 in SrCoO2 and SrNiO2, respectively. SrCoO2 shows a Jahn-Teller distortion (a>b) because the down-spin Co 3d electron occupies the degenerate (dxz, dyz) levels. Using Monte Carlo simulations based on the Heisenberg model with exchange parameters obtained from first principles calculations, we obtain the Néel temperatures (TN) of SrCoO2 and SrNiO2, which are 249 K and 85 K, respectively.

  17. Evolution of Taste Compounds of Dezhou-Braised Chicken During Cooking Evaluated by Chemical Analysis and an Electronic Tongue System.

    Science.gov (United States)

    Liu, Dengyong; Li, Shengjie; Wang, Nan; Deng, Yajun; Sha, Lei; Gai, Shengmei; Liu, Huan; Xu, Xinglian

    2017-05-01

    This paper aimed to study the time course changes in taste compounds of Dezhou-braised chicken during the entire cooking process mainly consisting of deep-frying, high-temperature boiling, and low-temperature braising steps. For this purpose, meat samples at different processing stages were analyzed for 5'-nucleotides and free amino acids, and were also subjected to electronic tongue measurements. Results showed that IMP, Glu, Lys, and sodium chloride were the main compounds contributing to the taste attributes of the final product. IMP and Glu increased in the boiling step and remained unchanged in the following braising steps. Meanwhile, decrease in Lys content and increase in sodium chloride content were observed over time in both boiling and braising steps. Intensities for bitterness, saltiness, and Aftertaste-B obtained from the electronic tongue analysis were correlated with the concentrations of these above chemical compounds. Therefore, the electronic tongue system could be applied to evaluate the taste development of Dezhou-braised chicken during processing. © 2017 Institute of Food Technologists®.

  18. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.

    2007-07-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  19. A review of defects and disorder in multinary tetrahedrally bonded semiconductors

    Science.gov (United States)

    Baranowski, Lauryn L.; Zawadzki, Pawel; Lany, Stephan; Toberer, Eric S.; Zakutayev, Andriy

    2016-12-01

    Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu2SnS3. We contrast our findings on Cu2SnS3 with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cu2ZnSnS4 and Cu(In,Ga)Se2. We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu2SnS3 and Cu2ZnSnS4, structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Overall, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.

  20. Magnetic properties and electronic structure of the Heusler compounds Ru2-x Fex CrSi

    Science.gov (United States)

    Hiroi, Masahiko; Rokkaku, Tsugumi; Mizutani, Sou; Fujii, Sinpei; Ishida, Shoji

    2009-03-01

    We have been trying to find Heusler compounds with high spin polarization which are robust against chemical disorders, because it is considered that disorders often degrade high spin polarization. The Heusler compound Ru2-x Fe:cCrSi is shown to be such a material from first principles band structure calculations, and it is also shown that for the Ru-rich compound antiferromagnetic states are energetically preferable to the ferromagnetic state. Experimentally the Fe-rich compound is shown to be ferromagnetic, whereas for x <= 0.2 ferromagnetism is found to disappear and a cusp in the temperature dependence in magnetization is found, which appears to indicate an antiferromagnetic transition. These results seem to agree with the theory on the whole. The experimental results are examined in the light of calculated band structures.