Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

International Nuclear Information System (INIS)

Pargon, E.; Menguelti, K.; Martin, M.; Bazin, A.; Joubert, O.; Chaix-Pluchery, O.; Sourd, C.; Derrough, S.; Lill, T.

2009-01-01

In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergistic effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp 2 carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.

RAFT technology for the production of advanced photoresist polymers

Science.gov (United States)

Sheehan, Michael T.; Farnham, William B.; Okazaki, Hiroshi; Sounik, James R.; Clark, George

2008-03-01

Reversible Addition Fragmentation Chain Transfer (RAFT) technology has been developed for use in producing high yield low polydispersity (PD) polymers for many applications. RAFT technology is being used to produce low PD polymers and to allow control of the polymer architecture. A variety of polymers are being synthesized for use in advanced photoresists using this technique. By varying the RAFT reagent used we can modulate the system reactivity of the RAFT reagent and optimize it for use in acrylate or methacrylate monomer systems (193 and 193i photoresist polymers) or for use in styrenic monomer systems (248 nm photoresist polymers) to achieve PD as low as 1.05. RAFT polymerization technology also allows us to produce block copolymers using a wide variety of monomers. These block copolymers have been shown to be useful in self assembly polymer applications to produce unique and very small feature sizes. The mutual compatibilities of all the components within a single layer 193 photoresist are very important in order to achieve low LWR and low defect count. The advent of immersion imaging demands an additional element of protection at the solid/liquid interface. We have used RAFT technology to produce block copolymers comprising a random "resist" block with composition and size based on conventional dry photoresist materials, and a "low surface energy" block for use in 193i lithography. The relative block lengths and compositions may be varied to tune solution behavior, surface energy, contact angles, and solubility in developer. The use of this technique will be explored to produce polymers used in hydrophobic single layer resists as well as additives compatible with the main photoresist polymer.

New non-chemically amplified molecular resist design with switchable sensitivity for multi-lithography applications and nanopatterning

Science.gov (United States)

Thakur, Neha; Guruprasad Reddy, Pulikanti; Nandi, Santu; Yogesh, Midathala; Sharma, Satinder K.; Pradeep, Chullikkattil P.; Ghosh, Subrata; Gonsalves, Kenneth E.

2017-12-01

The development of new photoresist materials for multi-lithography applications is crucial but a challenging task for semiconductor industries. During the last few decades, given the need for new resists to meet the requirements of semiconductor industries, several research groups have developed different resist materials for specific lithography applications. In this context, we have successfully synthesized a new molecular non-chemically amplified resist (n-CAR) (C3) based on the functionalization of aromatic hydroxyl core (4,4‧-(9H-fluorene-9,9-diyl)diphenol) with radiation sensitive sulfonium triflates for various lithography applications. While, micron scale features have been developed using i-line (365 nm) and DUVL (254 nm) exposure tools, electron beam studies on C3 thin films enabled us to pattern 20 nm line features with L/3S (line/space) characteristics on the silicon substrate. The sensitivity and contrast were calculated from the contrast curve analysis as 280 µC cm-2 and 0.025 respectively. Being an important parameter for any newly developed resists, the line edge roughness (LER) of 30 nm (L/5S) features were calculated, using SUMMIT metrology package, to be 3.66  ±  0.3 nm and found to be within the acceptable range. AFM analysis further confirmed 20 nm line width with smooth pattern wall. No deformation of patterned features was observed during AFM analysis which indicated good adhesion property between patterned resists and silicon substrates.

Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

KAUST Repository

Kryask, Marie

2013-01-01

Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.

Spray-coatable negative photoresist for high topography MEMS applications

International Nuclear Information System (INIS)

Arnold, Markus; Haas, Sven; Schwenzer, Falk; Schwenzer, Gunther; Reuter, Danny; Geßner, Thomas; Voigt, Anja; Gruetzner, Gabi

2017-01-01

In microsystem technology, the lithographical processing of substrates with a topography is very important. Interconnecting lines, which are routed over sloped topography sidewalls from the top of the protecting wafer to the contact pads of the device wafer, are one example of patterning over a topography. For structuring such circuit paths, a photolithography process, and therefore a process for homogeneous photoresist coating, is required. The most flexible and advantageous way of depositing a homogeneous photoresist film over structures with high topography steps is spray-coating. As a pattern transfer process for circuit paths in cavities, the lift-off process is widely used. A negative resist, like ma-N (MRT) or AZnLOF (AZ) is favoured for lift-off processes due to the existing negative angle of the sidewalls. Only a few sprayable negative photoresists are commercially available. In this paper, the development of a novel negative resist spray-coating based on a commercially available single-layer lift-off resist for spin-coating, especially for the patterning of structures inside the cavity and on the cavity wall, is presented. A variety of parameters influences the spray-coating process, and therefore the patterning results. Besides the spray-coating tool and the parameters, the composition of the resist solution itself also influences the coating results. For homogeneous resist coverage over the topography of the substrate, different solvent combinations for diluting the resist solution, different chuck temperatures during the coating process, and also the softbake conditions, are all investigated. The solvent formulations and the process conditions are optimized with respect to the homogeneity of the resist coverage on the top edge of the cavities. Finally, the developed spray-coating process, the resist material and the process stability are demonstrated by the following applications: (i) lift-off, (ii) electroplating, (iii) the wet and (iv) the dry

Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

KAUST Repository

Kryask, Marie; Trikeriotis, Markos; Ouyang, Christine; Chakrabarty, Sovik; Giannelis, Emmanuel P.; Ober, Christopher K.

2013-01-01

compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass

Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

DEFF Research Database (Denmark)

Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

2009-01-01

Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...

Depth profile analysis of polymerized fluorine compound on photo-resist film with angle-resolved XPS

International Nuclear Information System (INIS)

Iijima, Yoshitoki; Kubota, Toshio; Oinaka, Syuhei

2013-01-01

Angle-resolved XPS (ARXPS) is an observation technique which is very effective in chemical depth analysis method less than photoelectron detected depth. For the analysis of depth profile, several analysis methods have been proposed to calculate the depth profile using the ARXPS method. The present report is the measurements of depth profile of the fluorine in a fluorine-containing photo-resist film using the ARXPS method and the depth profile of concentration have been successfully determined using the ARCtick 1.0 software. It has been observed that thickness of the fluorocarbon enriched surface layer of the photo-resist was 2.7 nm, and so that the convert of the ARXPS data from the angle profile to the depth profile was proved to be useful analysis method for the ultrathin layer depth. (author)

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

Science.gov (United States)

Minter, Jason P.; Ross, Matthew F.; Livesay, William R.; Wong, Selmer S.; Narcy, Mark E.; Marlowe, Trey

1999-06-01

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

Enhanced Response Speed of ZnO Nanowire Photodetector by Coating with Photoresist

Directory of Open Access Journals (Sweden)

Xing Yang

2016-01-01

Full Text Available Spin-coating photoresist film on ZnO nanowire (NW was introduced into the fabrication procedure to improve photoresponse and recovery speed of a ZnO NW ultraviolet photoelectric detector. A ZnO NW was first assembled on prefabricated electrodes by dielectrophoresis. Then, photoresist was spin-coated on the nanowire. Finally, a metal layer was electrodeposited on the nanowire-electrode contacts. The response properties and I-V characteristics of ZnO NW photodetector were investigated by measuring the electrical current under different conditions. Measurement results demonstrated that the detector has an enhanced photoresponse and recovery speed after coating the nanowire with photoresist. The photoresponse and recovery characteristics of detectors with and without spin-coating were compared to demonstrate the effects of photoresist and the enhancement of response and recovery speed of the photodetector is ascribed to the reduced surface absorbed oxygen molecules and binding effect on the residual oxygen molecules after photoresist spin-coating. The results demonstrated that surface coating may be an effective and simple way to improve the response speed of the photoelectric device.

Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near-Field Optical Microscope

Directory of Open Access Journals (Sweden)

Sadegh Mehdi Aghaei

2015-01-01

Full Text Available Line nanopatterns are produced on the positive photoresist by scanning near-field optical microscope (SNOM. A laser diode with a wavelength of 450 nm and a power of 250 mW as the light source and an aluminum coated nanoprobe with a 70 nm aperture at the tip apex have been employed. A neutral density filter has been used to control the exposure power of the photoresist. It is found that the changes induced by light in the photoresist can be detected by in situ shear force microscopy (ShFM, before the development of the photoresist. Scanning electron microscope (SEM images of the developed photoresist have been used to optimize the scanning speed and the power required for exposure, in order to minimize the final line width. It is shown that nanometric lines with a minimum width of 33 nm can be achieved with a scanning speed of 75 µm/s and a laser power of 113 mW. It is also revealed that the overexposure of the photoresist by continuous wave laser generated heat can be prevented by means of proper photoresist selection. In addition, the effects of multiple exposures of nanopatterns on their width and depth are investigated.

A Novel, Aqueous Surface Treatment To Thermally Stabilize High Resolution Positive Photoresist Images*

Science.gov (United States)

Grunwald, John J.; Spencer, Allen C.

1986-07-01

The paper describes a new approach to thermally stabilize the already imaged profile of high resolution positive photoresists such as ULTRAMAC" PR-914. ***XD-4000, an aqueous emulsion of a blend of fluorine-bearing compounds is spun on top of the developed, positive photoresist-imaged wafer, and baked. This allows the photoresist to withstand temperatures up to at least 175 deg. C. while essentially maintaining vertical edge profiles. Also, adverse effects of "outgassing" in harsh environments, ie., plasma and ion implant are greatly minimized by allowing the high resolution imaged photoresist to be post-baked at "elevated" temperatures. Another type of product that accomplishes the same effect is ***XD-4005, an aqueous emulsion of a high temperature-resistant polymer. While the exact mechanism is yet to be identified, it is postulated that absorption of the "polymeric" species into the "skin" of the imaged resist forms a temperature resistant "envelope", thereby allowing high resolution photoresists to also serve in a "high temperature" mode, without reticulation, or other adverse effects due to thermal degradation. SEM's are presented showing imaged ULTRAMAC" PR-914 and ULTRAMAC" **EPA-914 geometries coated with XD-4000 or XD-4005 and followed by plasma etched oxide,polysilicon and aluminum. Selectivity ratios are compared with and without the novel treatment and are shown to be significantly better with the treatment. The surface-treated photoresist for thermal resistance remains easily strippable in solvent-based or plasma media, unlike photoresists that have undergone "PRIST" or other gaseous thermal stabilization methods.

Effect of heat treatment on the electrical resistance of photoresist as related to radioisotopic thermoelectric generator aging

International Nuclear Information System (INIS)

Johnson, R.T. Jr.

1979-03-01

Photoresist is used in electrical contact definition and processing in radioisotopic thermoelectric generators. Inadequate removal of material during processing could lead to electrical shorting when exposed to the high temperature use environment. This effect has been simulated through studies of the electrical resistance of thin layers of photoresist (Kodak Metal Etch Resist) on glass (Corning 7052) with tungsten electrodes. Results show that both the photoresist and the glass contribute to the resistance. The glass resistance decreases with increasing temperature and becomes significant at high temperatures. Annealing studies on the photoresist show that the resistance of the photoresist decreases by over five orders of magnitude upon annealing to 500 0 C, with a corresponding decrease in activation energy from 0.27 eV (350 0 C anneal) to 0.10 eV (500 0 C anneal). Time dependent decreases in resistance of the photoresist were also measured for up to 8 to 9 days during high temperature anneals. Some electrolytic transport of tungsten may occur through the photoresist at high temperatures. Results are compared with data on thermoelectric generators and show that photoresist could cause the electrical aging (voltage degradation) problem observed in some generators

Quantitative approach for optimizing e-beam condition of photoresist inspection and measurement

Science.gov (United States)

Lin, Chia-Jen; Teng, Chia-Hao; Cheng, Po-Chung; Sato, Yoshishige; Huang, Shang-Chieh; Chen, Chu-En; Maruyama, Kotaro; Yamazaki, Yuichiro

2018-03-01

Severe process margin in advanced technology node of semiconductor device is controlled by e-beam metrology system and e-beam inspection system with scanning electron microscopy (SEM) image. By using SEM, larger area image with higher image quality is required to collect massive amount of data for metrology and to detect defect in a large area for inspection. Although photoresist is the one of the critical process in semiconductor device manufacturing, observing photoresist pattern by SEM image is crucial and troublesome especially in the case of large image. The charging effect by e-beam irradiation on photoresist pattern causes deterioration of image quality, and it affect CD variation on metrology system and causes difficulties to continue defect inspection in a long time for a large area. In this study, we established a quantitative approach for optimizing e-beam condition with "Die to Database" algorithm of NGR3500 on photoresist pattern to minimize charging effect. And we enhanced the performance of measurement and inspection on photoresist pattern by using optimized e-beam condition. NGR3500 is the geometry verification system based on "Die to Database" algorithm which compares SEM image with design data [1]. By comparing SEM image and design data, key performance indicator (KPI) of SEM image such as "Sharpness", "S/N", "Gray level variation in FOV", "Image shift" can be retrieved. These KPIs were analyzed with different e-beam conditions which consist of "Landing Energy", "Probe Current", "Scanning Speed" and "Scanning Method", and the best e-beam condition could be achieved with maximum image quality, maximum scanning speed and minimum image shift. On this quantitative approach of optimizing e-beam condition, we could observe dependency of SEM condition on photoresist charging. By using optimized e-beam condition, measurement could be continued on photoresist pattern over 24 hours stably. KPIs of SEM image proved image quality during measurement and

Pyrolyzed Photoresist Carbon Electrodes for Trace Electroanalysis of Nickel(II

Directory of Open Access Journals (Sweden)

Ligia Maria Moretto

2015-05-01

Full Text Available Novel pyrolyzed photoresist carbon electrodes for electroanalytical applications have been produced by photolithographic technology followed by pyrolysis of the photoresist. A study of the determination of Ni(II dimethylglyoximate (Ni-DMG through adsorptive cathodic stripping voltammetry at an in situ bismuth-modified pyrolyzed photoresist electrode (Bi-PPCE is reported. The experimental conditions for the deposition of a bismuth film on the PPCE were optimized. The Bi-PPCE allowed the analysis of trace concentrations of Ni(II, even in the presence of Co(II, which is the main interference in this analysis, with cathodic stripping square wave voltammograms characterized by well-separated stripping peaks. The calculated limits of detection (LOD were 20 ng∙L−1 for Ni(II alone and 500 ng∙L−1 in the presence of Co(II. The optimized method was finally applied to the analysis of certified spring water (NIST1640a.

Metal Oxide Nanoparticle Photoresists for EUV Patterning

KAUST Repository

Jiang, Jing; Chakrabarty, Souvik; Yu, Mufei; Ober, Christopher K.

2014-01-01

© 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have

Giant negative photoresistance of ZnO single crystals

Energy Technology Data Exchange (ETDEWEB)

Barzola-Quiquia, Jose; Esquinazi, Pablo [Division of Superconductivity and Magnetism, University of Leipzig (Germany); Heluani, Silvia [Laboratorio de Fisica del Solido, FCEyT, Universidad Nacional de Tucuman, 4000 S. M. de Tucuman (Argentina); Villafuerte, Manuel [Dept. de Fisica, FCEyT, Universidad Nacional de Tucuman (Argentina); CONICET, Tucuman (Argentina); Poeppl, Andreas [Division of Magnetic Resonance of Complex Quantum Solids, University of Leipzig, D-04103 Leipzig (Germany)

2011-07-01

ZnO is a wide band gap semiconductor exhibiting the largest charge-carrier mobility among oxides. ZnO is a material with potential applications for short-wavelength optoelectronic devices, as a blue light emitting diodes and in spintronics. In this contribution we have measured the temperature dependence (30 K < T < 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T < 200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.

Photolithography of thick photoresist coating in anisotropically etched V-grooves for electrically controlled liquid crystal photonic bandgap fiber devices

DEFF Research Database (Denmark)

Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

2009-01-01

Thick photoresist coating for electrode patterning in anisotropically etched v-grooves is investigated. The photoresist coverage is compared with and without soft baking. Two-step exposure is applied for a complete exposure and minimizing the resolution loss.......Thick photoresist coating for electrode patterning in anisotropically etched v-grooves is investigated. The photoresist coverage is compared with and without soft baking. Two-step exposure is applied for a complete exposure and minimizing the resolution loss....

Microwave performance of photoresist-alumina microcomposites for batch fabrication of thick polymer-based dielectric structures

International Nuclear Information System (INIS)

Rashidian, Atabak; Klymyshyn, David M; Aligodarz, Mohammadreza Tayfeh; Boerner, Martin; Mohr, Jürgen

2012-01-01

The goal of this paper is to investigate the electrical properties of photoresist-alumina microcomposites with different portions of ceramic content. Substrates of photoresist-alumina microcomposites are fabricated and a comprehensive analysis is performed to characterize their dielectric constant and dielectric loss tangent at microwave frequencies up to 40 GHz. To evaluate the performance of these materials for microwave applications, the properties of various lithographically fabricated antenna elements are examined and analysed based on the measured electrical properties. The experimental results show that the electrical properties of the photoresist composite are nonlinearly affected by ceramic content and also a minimum percentage of ceramic portion is required to improve the electrical properties of the photoresist composite. For instance, comparison of 0 wt% with 23 wt% SU8-alumina shows that no reduction is achieved for the dielectric loss tangent. Comparison of 38 wt% with 48 wt% SU8-alumina microcomposite shows that the dielectric loss tangent is improved from 0.03 to 0.01 and the dielectric constant is increased from 3.8 to 5.0 at 25 GHz. These improvements can result in superior performance for the photoresist-based microwave components. (paper)

Microwave performance of photoresist-alumina microcomposites for batch fabrication of thick polymer-based dielectric structures

Science.gov (United States)

Rashidian, Atabak; Klymyshyn, David M.; Tayfeh Aligodarz, Mohammadreza; Boerner, Martin; Mohr, Jürgen

2012-10-01

The goal of this paper is to investigate the electrical properties of photoresist-alumina microcomposites with different portions of ceramic content. Substrates of photoresist-alumina microcomposites are fabricated and a comprehensive analysis is performed to characterize their dielectric constant and dielectric loss tangent at microwave frequencies up to 40 GHz. To evaluate the performance of these materials for microwave applications, the properties of various lithographically fabricated antenna elements are examined and analysed based on the measured electrical properties. The experimental results show that the electrical properties of the photoresist composite are nonlinearly affected by ceramic content and also a minimum percentage of ceramic portion is required to improve the electrical properties of the photoresist composite. For instance, comparison of 0 wt% with 23 wt% SU8-alumina shows that no reduction is achieved for the dielectric loss tangent. Comparison of 38 wt% with 48 wt% SU8-alumina microcomposite shows that the dielectric loss tangent is improved from 0.03 to 0.01 and the dielectric constant is increased from 3.8 to 5.0 at 25 GHz. These improvements can result in superior performance for the photoresist-based microwave components.

Effects of chemical kinetics and starting material regeneration on the efficiency of an iodine laser amplifier

International Nuclear Information System (INIS)

Fisk, G.A.

1977-05-01

A model of the chemical kinetics occurring in an iodine laser amplifier is presented and used to calculate the degree to which the starting material is consumed as a result of laser operation. The cost of purchasing new starting material is estimated and shown to be prohibitive. A scheme for regenerating the starting material from the species present in the amplifier after lasing is proposed. It is shown that the estimated efficiency of this chemical regeneration process is appreciably higher than the projected optimum efficiency of the pumping process

Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

International Nuclear Information System (INIS)

Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

2017-01-01

Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O_2−CF_4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO_2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography

Science.gov (United States)

Liu, Sen; Glodde, Martin; Varanasi, Pushkara R.

2010-04-01

Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, concerns have been raised about their environmental impact due to their chemical persistency, bioaccumulation and toxicity. It is a general interest to find environmentally benign PAGs that are free of fluorine atoms. Here we describe the design, synthesis and characterization of a series of novel fluorine-free onium salts as PAGs for 193 nm photoresists. These PAGs demonstrated desirable physical and lithography properties when compared with PFAS-based PAGs for both dry and immersion exposures.

Designing of high-resolution photoresists: use of modern NMR ...

Indian Academy of Sciences (India)

Unknown

Novolac copolymers were prepared by both one- and two- step procedures ... ture was diluted with hydrochloric acid (1 : 1) in an ice bath and the ..... spectrum of the negative photoresist. The almost super-. +. O. N2. SO2. O. O. DNQO. DNQO.

Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

Energy Technology Data Exchange (ETDEWEB)

Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gong, Lijun [Research and Development Department, Guangzhou Fastprint Circuit Tech Co., Ltd., Guangzhou 510663 (China); He, Wei, E-mail: heweiz@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Research and Development Department, Guangdong Guanghua Sci-Tech Co., Ltd., Shantou 515000 (China)

2017-07-31

Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O{sub 2}−CF{sub 4} low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO{sub 2} by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

Using an SU-8 Photoresist Structure and Cytochrome C Thin Film Sensing Material for a Microbolometer

Directory of Open Access Journals (Sweden)

Guo-Dung John Su

2012-11-01

Full Text Available There are two critical parameters for microbolometers: the temperature coefficient of resistance (TCR of the sensing material, and the thermal conductance of the insulation structure. Cytochrome c protein, having a high TCR, is a good candidate for infrared detection. We can use SU-8 photoresist for the thermal insulation structure, given its low thermal conductance. In this study, we designed a platform structure based on a SU-8 photoresist. We fabricated an infrared sensing pixel and recorded a high TCR for this new structure. The SU-8 photoresist insulation structure was fabricated using the exposure dose method. We experimentally demonstrated high values of TCR from 22%/K to 25.7%/K, and the measured noise was 1.2 × 10–8 V2/Hz at 60 Hz. When the bias current was 2 μA, the calculated voltage responsivity was 1.16 × 105 V/W. This study presents a new kind of microbolometer based on cytochrome c protein on top of an SU-8 photoresist platform that does not require expensive vacuum deposition equipment.

True-color 640 ppi OLED arrays patterned by CA i-line photolithography

NARCIS (Netherlands)

Malinowski, P.E.; Ke, T.; Nakamura, A.; Chang, T.-Y.; Gokhale, P.; Steudel, S.; Janssen, D.; Kamochi, Y.; Koyama, I.; Iwai,Y.; Heremans, P.

2015-01-01

In this paper, side-by-side patterning of red, green and blue OLEDs is demonstrated. To achieve 640 ppi arrays with 20 µm subpixel pitch, chemically amplified, i-line photoresist system with submicron resolution was used. These results show feasibility of obtaining full-color displays with

Pyrolyzed Photoresist Electrodes for Integration in Microfluidic Chips for Transmitter Detection from Biological Cells

DEFF Research Database (Denmark)

Larsen, Simon Tylsgaard; Argyraki, Aikaterini; Amato, Letizia

2013-01-01

In this study, we show how pyrolyzed photoresist carbon electrodes can be used for amperometric detection of potassium-induced transmitter release from large groups of neuronal PC 12 cells. This opens the way for the use of carbon film electrodes in microfabricated devices for neurochemical drug ...... by the difference in photoresist viscosity. By adding a soft bake step to the fabrication procedure, the flatness of pyrolyzed AZ 5214 electrodes could be improved which would facilitate their integration in microfluidic chip devices....

SU-8 photoresist-derived electrospun carbon nanofibres as high ...

Indian Academy of Sciences (India)

... Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 40; Issue 3. SU-8 photoresist-derived electrospun carbon nanofibres as high-capacity anode material for lithium ion battery. M KAKUNURI S KAUSHIK A SAINI C S SHARMA. Volume 40 Issue 3 June 2017 pp 435-439 ...

Use of direct washing of chemical dispense nozzle for defect control

Science.gov (United States)

Linnane, Michael; Mack, George; Longstaff, Christopher; Winter, Thomas

2006-03-01

Demands for continued defect reduction in 300mm IC manufacturing are driving process engineers to examine all aspects of the chemical apply process for improvement. Historically, the defect contribution from photoresist apply nozzles has been minimized through a carefully controlled process of "dummy dispenses" to keep the photoresist in the tip "fresh" and remove any solidified material, a preventive maintenance regime involving periodic cleaning or replacing of the nozzles, and reliance on a pool of solvent within the nozzle storage block to keep the photoresist from solidifying at the nozzle tip. The industry standard has worked well for the most part but has limitations in terms of cost effectiveness and absolute defect elimination. In this study, we investigate the direct washing of the chemical apply nozzle to reduce defects seen on the coated wafer. Data is presented on how the direct washing of the chemical dispense nozzle can be used to reduce coating related defects, reduce material costs from the reduction of "dummy dispense", and can reduce equipment downtime related to nozzle cleaning or replacement.

Experimental and theoretical study on chemically semi-amplified resist AR-P 6200

Science.gov (United States)

Kostic, I.; Vutova, K.; Andok, R.; Barak, V.; Bencurova, A.; Ritomsky, R.; Tanaka, T.

2018-03-01

Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The influence of the e-beam lithography process parameters, namely, exposure dose, development process conditions, and proximity effects on the obtained developed images was studied for the case of 40-keV electron energy.

Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning

KAUST Repository

Li, Li

2015-07-28

© 2015 American Chemical Society. Hf-based hybrid photoresist materials with three different organic ligands were prepared by a sol-gel-based method, and their patterning mechanism was investigated in detail. All hybrid nanoparticle resists are patternable using UV exposure. Their particle sizes show a dramatic increase from the initial 3-4 nm to submicron size after exposure, with no apparent inorganic content or thermal property change detected. XPS results showed that the mass percentage of the carboxylic group in the structure of nanoparticles decreased with increasing exposure duration. The particle coarsening sensitivities of those hybrid nanoparticles are consistent with their EUV performance. The current work provides an understanding for the development mechanism and future guidance for the design and processing of high performance resist materials for large-scale microelectronics device fabrication.

Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography

Science.gov (United States)

Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S. D.; Flewitt, Andrew J.; Wilkinson, Timothy D.

2016-12-01

High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm-2, 1 nAs-1) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ˜33 nm with 80 nm spacing; for isolated structures, ˜45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ˜0.25 cm2.

Fluorine atom subsurface diffusion and reaction in photoresist

International Nuclear Information System (INIS)

Greer, Frank; Fraser, D.; Coburn, J.W.; Graves, David B.

2003-01-01

Kinetic studies of fluorine and deuterium atoms interacting with an OiR 897 10i i-line photoresist (PR) are reported. All experiments were conducted at room temperature. Films of this PR were coated on quartz-crystal microbalance (QCM) substrates and exposed to alternating fluxes of these atoms in a high vacuum apparatus. Mass changes of the PR were observed in situ and in real time during the atom beam exposures using the QCM. A molecular-beam sampled differentially pumped quadrupole mass spectrometer (QMS) was used to measure the species desorbing from the PR surface during the F and D atom exposures. During the D atom exposures, hydrogen abstraction and etching of the PR was observed, but no DF formation was detected. However, during the F atom exposures, the major species observed to desorb from the surface was DF, formed from fluorine abstraction of deuterium from the photoresist. No evidence of film etching or fluorine self-abstraction was observed. The film mass increased during F atom exposure, evidently due to the replacement of D by F in the film. The rate of DF formation and mass uptake were both characterized by the same kinetics: An initially rapid step declining exponentially with time (e -t/τ ), followed by a much slower step following inverse square root of time (t -1/2 ) kinetics. The initially rapid step was interpreted as surface abstraction of D by F to form DF, which desorbs, with subsequent F impacting the surface inserted into surface C dangling bonds. The slower step was interpreted as F atoms diffusing into the fluorinated photoresist, forming DF at the boundary of the fluorinated carbon layer. The t -1/2 kinetics of this step are interpreted to indicate that F diffusion through the fluorinated carbon layer is much slower than the rate of F abstraction of D to form DF, or the rate of F insertion into the carbon dangling bonds left behind after DF formation. A diffusion-limited growth model was formulated, and the model parameters are

Acoustic-wave sensor for ambient monitoring of a photoresist-stripping agent

Science.gov (United States)

Pfeifer, K.B.; Hoyt, A.E.; Frye, G.C.

1998-08-18

The acoustic-wave sensor is disclosed. The acoustic-wave sensor is designed for ambient or vapor-phase monitoring of a photoresist-stripping agent such as N-methylpyrrolidinone (NMP), ethoxyethylpropionate (EEP) or the like. The acoustic-wave sensor comprises an acoustic-wave device such as a surface-acoustic-wave (SAW) device, a flexural-plate-wave (FPW) device, an acoustic-plate-mode (APM) device, or a thickness-shear-mode (TSM) device (also termed a quartz crystal microbalance or QCM) having a sensing region on a surface thereof. The sensing region includes a sensing film for sorbing a quantity of the photoresist-stripping agent, thereby altering or shifting a frequency of oscillation of an acoustic wave propagating through the sensing region for indicating an ambient concentration of the agent. According to preferred embodiments of the invention, the acoustic-wave device is a SAW device; and the sensing film comprises poly(vinylacetate), poly(N-vinylpyrrolidinone), or poly(vinylphenol). 3 figs.

Effect of thiol group on the curing process of alkaline developable photo-resists

International Nuclear Information System (INIS)

Hidetaka Oka; Masaki Ohwa; Hisatoshi Kura

1999-01-01

Photosensitivity of a conventional radical photo-initiator in an alkaline developable photoresist is boosted by substitution with a thiol group. Evidence is presented that the thiol group acts via chain transfer mechanism

Aqueous-based thick photoresist removal for bumping applications

Science.gov (United States)

Moore, John C.; Brewer, Alex J.; Law, Alman; Pettit, Jared M.

2015-03-01

Cleaning processes account for over 25% of processing in microelectronic manufacturing [1], suggesting electronics to be one of the most chemical intensive markets in commerce. Industry roadmaps exist to reduce chemical exposure, usage, and waste [2]. Companies are encouraged to create a safer working environment, or green factory, and ultimately become certified similar to LEED in the building industry [3]. A significant step in this direction is the integration of aqueous-based photoresist (PR) strippers which eliminate regulatory risks and cut costs by over 50%. One of the largest organic solvent usages is based upon thick PR removal during bumping processes [4-6]. Using market projections and the benefits of recycling, it is estimated that over 1,000 metric tons (mt) of residuals originating from bumping processes are incinerated or sent to a landfill. Aqueous-based stripping would eliminate this disposal while also reducing the daily risks to workers and added permitting costs. Positive-tone PR dissolves in aqueous strippers while negative-tone systems are lifted-off from the substrate, bumps, pillars, and redistribution layers (RDL). While the wafers are further processed and rinsed, the lifted-off PR is pumped from the tank, collected onto a filter, and periodically back-flushed to the trash. The PR solids become a non-hazardous plastic waste while the liquids are mixed with the developer stream, neutralized, filtered, and in most cases, disposed to the sewer. Regardless of PR thickness, removal processes may be tuned to perform in <15min, performing at rates nearly 10X faster than solvents with higher bath lives. A balanced formula is safe for metals, dielectrics, and may be customized to any fab.

Patterning characteristics of a chemically-amplified negative resist in synchrotron radiation lithography

International Nuclear Information System (INIS)

Deguchi, Kimiyoshi; Miyoshi, Kazunori; Ishii, Tetsuyoshi; Matsuda, Tadahito

1992-01-01

To explore the applicability of synchrotron radiation X-ray lithography for fabricating sub-quartermicron devices, we investigate the patterning characteristics of the chemically-amplified negative resist SAL601-ER7. Since these characteristics depend strongly on the conditions of the chemical amplification process, the effects of post-exposure baking and developing conditions on sensitivity and resolution are examined. The resolution-limiting factors are investigated, revealing that pattern collapse during the development process and fog caused by Fresnel diffraction, photo-electron scattering, and acid diffusion in the resist determine the resolution and the maximum aspect ratio of the lines and spaces pattern. Using the model of a swaying beam supported at one end, it is shown that pattern collapse depends on the resist pattern's flexural stiffness. Patterning stability, which depends on the delay time between exposure and baking, is also discussed. (author)

Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies

Energy Technology Data Exchange (ETDEWEB)

Škriniarová, J., E-mail: jaroslava.skriniarova@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Pudiš, D. [Department of Physics, University of Žilina, Žilina (Slovakia); Andok, R. [Department of E-Beam Lithography, Institute of Informatics, Slovak Academy of Sciences, Bratislava (Slovakia); Lettrichová, I. [Department of Physics, University of Žilina, Žilina (Slovakia); Uherek, F. [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia)

2017-02-15

Highlights: • Applicability of the AZ 5214E photoresist for three different lithographies. • Useful for the fabrication of 1D and 2D periodic and irregular structures. • 2D structures with 260 nm period achieved by the laser interference lithography. • Structures with period below 500 nm achieved with the e-beam direct-write lithography. • Holes of 270 nm diameter made by the near-field scanning optical microscopy lithography. - Abstract: In this paper we show a comparison of chosen lithographies used for the AZ 5214E photoresist, which is normally UV sensitive but has also been investigated for its sensitivity to e-beam exposure. Three lithographies, the E-Beam Direct Write lithography (EBDW), laser Interference Lithography (IL) and the non-contact Near-field Scanning Optical Microscopy (NSOM) lithography, are discussed here and the results on exposed arrays of simple patterns are shown. With the EBDW and IL we achieved periods of the structures around half-micron, and we demonstrate attainability of dimensions smaller or comparable than usually achieved by a standard optical photolithography with the investigated photoresist. With the non-contact NSOM lithography structures with periods slightly above a micron were achieved.

Degradation effects and Si-depth profiling in photoresists using ion beam analysis

NARCIS (Netherlands)

IJzendoorn, van L.J.; Schellekens, J.P.W.

1989-01-01

The reaction of silicon-containing vapour with a photoresist layer, as used in dry developable lithographic processes, was studied with Rutherford backscattering spectrometry (RBS). Degradation of the polymer layer was observed, but the total amount of incorporated Si was found to be constant during

Effects of temperature on mechanical properties of SU-8 photoresist material

Energy Technology Data Exchange (ETDEWEB)

Chung, Soon Wan; Park, Seung Bae [State University of New York, New York (United States)

2013-09-15

A representative fabrication processing of SU-8 photoresist, Ultraviolet (UV) lithography is usually composed of spin coat, soft bake, UV exposure, post exposure bake (PEB), development and optional hard bake, etc. The exposed region of SU-8 is crosslinked during the PEB process and its physical properties highly depend on UV exposure and PEB condition. This work was initiated to investigate if thermal baking after fabrication can affect the mechanical properties of SU-8 photoresist material because SU-8 is trying to be used as a structural material for MEMS operated at high temperature. Since a temperature of 95 .deg. C is normally recommended for PEB process, elevated temperatures up to 200 .deg. C were considered for the optional hard bake process. The viscoelastic material properties were measured by dynamic mechanical analyses (DMA). Also, pulling tests were performed to obtain Young's modulus and Poisson's ratio as a function of strain rate in a wide temperature range. From this study, the effects of temperature on the elastic and viscoelastic material properties of SU-8 were obtained.

Effects of temperature on mechanical properties of SU-8 photoresist material

International Nuclear Information System (INIS)

Chung, Soon Wan; Park, Seung Bae

2013-01-01

A representative fabrication processing of SU-8 photoresist, Ultraviolet (UV) lithography is usually composed of spin coat, soft bake, UV exposure, post exposure bake (PEB), development and optional hard bake, etc. The exposed region of SU-8 is crosslinked during the PEB process and its physical properties highly depend on UV exposure and PEB condition. This work was initiated to investigate if thermal baking after fabrication can affect the mechanical properties of SU-8 photoresist material because SU-8 is trying to be used as a structural material for MEMS operated at high temperature. Since a temperature of 95 .deg. C is normally recommended for PEB process, elevated temperatures up to 200 .deg. C were considered for the optional hard bake process. The viscoelastic material properties were measured by dynamic mechanical analyses (DMA). Also, pulling tests were performed to obtain Young's modulus and Poisson's ratio as a function of strain rate in a wide temperature range. From this study, the effects of temperature on the elastic and viscoelastic material properties of SU-8 were obtained.

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

Science.gov (United States)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

Solubility studies of inorganic–organic hybrid nanoparticle photoresists with different surface functional groups

KAUST Repository

Li, Li

2016-01-01

© 2016 The Royal Society of Chemistry. The solubility behavior of Hf and Zr based hybrid nanoparticles with different surface ligands in different concentrations of photoacid generator as potential EUV photoresists was investigated in detail. The nanoparticles regardless of core or ligand chemistry have a hydrodynamic diameter of 2-3 nm and a very narrow size distribution in organic solvents. The Hansen solubility parameters for nanoparticles functionalized with IBA and 2MBA have the highest contribution from the dispersion interaction than those with tDMA and MAA, which show more polar character. The nanoparticles functionalized with unsaturated surface ligands showed more apparent solubility changes after exposure to DUV than those with saturated ones. The solubility differences after exposure are more pronounced for films containing a higher amount of photoacid generator. The work reported here provides material selection criteria and processing strategies for the design of high performance EUV photoresists.

Computational approach on PEB process in EUV resist: multi-scale simulation

Science.gov (United States)

Kim, Muyoung; Moon, Junghwan; Choi, Joonmyung; Lee, Byunghoon; Jeong, Changyoung; Kim, Heebom; Cho, Maenghyo

2017-03-01

For decades, downsizing has been a key issue for high performance and low cost of semiconductor, and extreme ultraviolet lithography is one of the promising candidates to achieve the goal. As a predominant process in extreme ultraviolet lithography on determining resolution and sensitivity, post exposure bake has been mainly studied by experimental groups, but development of its photoresist is at the breaking point because of the lack of unveiled mechanism during the process. Herein, we provide theoretical approach to investigate underlying mechanism on the post exposure bake process in chemically amplified resist, and it covers three important reactions during the process: acid generation by photo-acid generator dissociation, acid diffusion, and deprotection. Density functional theory calculation (quantum mechanical simulation) was conducted to quantitatively predict activation energy and probability of the chemical reactions, and they were applied to molecular dynamics simulation for constructing reliable computational model. Then, overall chemical reactions were simulated in the molecular dynamics unit cell, and final configuration of the photoresist was used to predict the line edge roughness. The presented multiscale model unifies the phenomena of both quantum and atomic scales during the post exposure bake process, and it will be helpful to understand critical factors affecting the performance of the resulting photoresist and design the next-generation material.

Investigation of UFO defect on DUV CAR and BARC process

Science.gov (United States)

Yet, Siew Ing; Ko, Bong Sang; Lee, Soo Man; May, Mike

2004-05-01

Photo process defect reduction is one of the most important factors to improve the process stability and yield in sub-0.18um DUV process. In this paper, a new approach to minimize the Deep-UV (DUV) Chemically Amplified Resist (CAR) and Bottom Anti-Reflective Coating (BARC) induced defect known as UFO (UnidentiFied Object) defect will be introduced. These defects have mild surface topography difference on BARC; it only exists on the wide exposed area where there is no photoresist pattern. In this test, Nikon KrF Stepper & Scanner and TEL Clean track were used. Investigation was carried out on the defect formulation on both Acetal and ESCAP type of photoresist while elemental analysis was done by Atomic Force Microscope (AFM) & Auger Electron Spectroscopy (AES). Result indicated that both BARC and photoresist induce this UFO defect; total defect quantity is related with Post Exposure Bake (PEB) condition. Based on the elemental analysis and process-split test, we can conclude that this defect is caused by lack of acid amount and low diffusivity which is related to PAG (Photo Acid Generator) and TAG (Thermal Acid Generator) in KrF photoresist and BARC material. By optimizing photoresist bake condition, this UFO defect as well as other related defect such as Satellite defect could be eliminated.

Conformal coating by photoresist of sharp corners of anisotropically etched through-holes in silicon

DEFF Research Database (Denmark)

Heschel, Matthias; Bouwstra, Siebe

1997-01-01

The authors describe a photoresist treatment yielding conformal coating of three-dimensional silicon structures. This even includes the sharp corners of through-holes obtained by anisotropic etching in (100)-silicon. Resist reflow from these corners is avoided by replacing the common baking...

Replication of optical microlens arrays using photoresist coated molds

DEFF Research Database (Denmark)

Chakrabarti, Maumita; Dam-Hansen, Carsten; Stubager, Jørgen

2016-01-01

A cost reduced method of producing injection molding tools is reported and demonstrated for the fabrication of optical microlens arrays. A standard computer-numerical-control (CNC) milling machine was used to make a rough mold in steel. Surface treatment of the steel mold by spray coating...... with photoresist is used to smooth the mold surface providing good optical quality. The tool and process are demonstrated for the fabrication of an ø50 mm beam homogenizer for a color mixing LED light engine. The acceptance angle of the microlens array is optimized, in order to maximize the optical efficiency from...

Hydrogenated amorphous silicon photoresists for HgCdTe patterning

Energy Technology Data Exchange (ETDEWEB)

Hollingsworth, R.E.; DeHart, C.; Wang, L.; Dinan, J.H.; Johnson, J.N.

1997-07-01

A process to use a hydrogenated amorphous silicon (a-Si:H) film as a dry photoresist mask for plasma etching of HgCdTe has been demonstrated. The a-Si:H films were deposited using standard plasma enhanced chemical vapor deposition with pure silane as the source gas. X-ray photoelectron spectra show that virtually no oxide grows on the surface of an a-Si:H film after 3 hours in air, indicating that it is hydrogen passivated. Ultraviolet light frees hydrogen from the surface and enhances the oxide growth rate. A pattern of 60 micron square pixels was transferred from a contact mask to the surface of an a-Si:H film by ultraviolet enhanced oxidation in air. For the conditions used, the oxide thickness was 0.5--1.0 nm. Hydrogen plasmas were used to develop this pattern by removing the unexposed regions of the film. A hydrogen plasma etch selectivity between oxide and a-Si:H of greater than 500:1 allows patterns as thick as 700 nm to be generated with this very thin oxide. These patterns were transferred into HgCdTe by etching in an electron cyclotron resonance plasma. An etch selectivity between a-Si:H and HgCdTe of greater than 4:1 was observed after etching 2,500 nm into the HgCdTe. All of the steps are compatible with processing in vacuum.

Metal Oxide Nanoparticle Photoresists for EUV Patterning

KAUST Repository

Jiang, Jing

2014-01-01

© 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.

Silicon-depth profiling with Rutherford backscattering in photoresist layers; a study on the effects of degradation

NARCIS (Netherlands)

IJzendoorn, van L.J.; Schellekens, J.P.W.

1989-01-01

The reaction of a silicon-containing vapor with a photoresist layer, as used in some dry developable lithographic processes, was studied with Rutherford backscattering spectrometry. Degradation of the polymer layer under ion beam irradiation was observed, but it was found that this had no influence

An approach to fabricating chemical sensors based on ZnO nanorod arrays

International Nuclear Information System (INIS)

Park, Jae Young; Song, Dong Eon; Kim, Sang Sub

2008-01-01

Vertically and laterally aligned ZnO nanorod arrays were synthesized on Pt-coated Si substrates by catalyst-free metal organic chemical vapor deposition. An approach to fabricating chemical sensors based on the nanorod arrays using a coating-and-etching process with a photo-resist is reported. Tests of the devices as oxygen gas sensors have been performed. Our results demonstrate that the approach holds promise for the realization of sensitive and reliable nanorod array chemical sensors

Hierarchical Micro/Nano Structures by Combined Self-Organized Dewetting and Photopatterning of Photoresist Thin Films.

Science.gov (United States)

Sachan, Priyanka; Kulkarni, Manish; Sharma, Ashutosh

2015-11-17

Photoresists are the materials of choice for micro/nanopatterning and device fabrication but are rarely used as a self-assembly material. We report for the first time a novel interplay of self-assembly and photolithography for fabrication of hierarchical and ordered micro/nano structures. We create self-organized structures by the intensified dewetting of unstable thin (∼10 nm to 1 μm) photoresist films by annealing them in an optimal solvent and nonsolvent liquid mixture that allows spontaneous dewetting to form micro/nano smooth dome-like structures. The density, size (∼100 nm to millimeters), and curvature/contact angle of the dome/droplet structures are controlled by the film thickness, composition of the dewetting liquid, and time of annealing. Ordered dewetted structures are obtained simply by creating spatial variation of viscosity by ultraviolet exposure or by photopatterning before dewetting. Further, the structures thus fabricated are readily photopatterned again on the finer length scales after dewetting. We illustrate the approach by fabricating several three-dimensional structures of varying complexity with secondary and tertiary features.

Studying the mechanism of hybrid nanoparticle EUV photoresists

KAUST Repository

Zhang, Ben; Li, Li; Jiang, Jing; Neisser, Mark; Chun, Jun Sung; Ober, Christopher K.; Giannelis, Emmanuel P.

2015-01-01

This work focuses on the investigation of dual tone patterning mechanism with hybrid inorganic/organic photoresists. Hafnium oxide (HfO2) modified with acrylic acid was prepared and the influence of electrolyte solutions as well as pH on its particle size change was investigated. The average particle size and zeta potential of the nanoparticles in different electrolyte solutions were measured. The results show that addition of different concentrations of electrolytes changed the hydrodynamic diameter of nanoparticles in water. Increased concentration of tetramethyl ammonium hydroxide (TMAH) caused the zeta potential of nanoparticles to change from positive to negative and its hydrodynamic diameter to increase from 40 nm to 165 nm. In addition, increasing concentration of triflic acid led to the decrease of particle size and zeta potential. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Studying the mechanism of hybrid nanoparticle EUV photoresists

KAUST Repository

Zhang, Ben

2015-03-23

This work focuses on the investigation of dual tone patterning mechanism with hybrid inorganic/organic photoresists. Hafnium oxide (HfO2) modified with acrylic acid was prepared and the influence of electrolyte solutions as well as pH on its particle size change was investigated. The average particle size and zeta potential of the nanoparticles in different electrolyte solutions were measured. The results show that addition of different concentrations of electrolytes changed the hydrodynamic diameter of nanoparticles in water. Increased concentration of tetramethyl ammonium hydroxide (TMAH) caused the zeta potential of nanoparticles to change from positive to negative and its hydrodynamic diameter to increase from 40 nm to 165 nm. In addition, increasing concentration of triflic acid led to the decrease of particle size and zeta potential. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Suspended microstructures of epoxy based photoresists fabricated with UV photolithography

DEFF Research Database (Denmark)

Hemanth, Suhith; Anhøj, Thomas Aarøe; Caviglia, Claudia

2017-01-01

In this work we present an easy, fast, reliable and low cost microfabrication technique for fabricating suspended microstructures of epoxy based photoresistswith UV photolithography. Two different fabrication processes with epoxy based resins (SU-8 and mr-DWL) using UV exposures at wavelengths...... of 313 nm and 405 nm were optimized and compared in terms of structural stability, control of suspended layer thickness and resolution limits. A novel fabrication process combining the two photoresists SU-8 and mr-DWL with two UV exposures at 365 nm and 405 nm respectively provided a wider processing...... window for definition of well-defined suspended microstructures with lateral dimensions down to 5 μmwhen compared to 313 nm or 365 nm UV photolithography processes....

Invisible Security Printing on Photoresist Polymer Readable by Terahertz Spectroscopy

Directory of Open Access Journals (Sweden)

Hee Jun Shin

2017-12-01

Full Text Available We experimentally modulate the refractive index and the absorption coefficient of an SU-8 dry film in the terahertz region by UV light (362 nm exposure with time dependency. Consequently, the refractive index of SU-8 film is increased by approximately 6% after UV light exposure. Moreover, the absorption coefficient also changes significantly. Using the reflective terahertz imaging technique, in addition, we can read security information printed by UV treatment on an SU-8 film that is transparent in the visible spectrum. From these results, we successfully demonstrate security printing and reading by using photoresist materials and the terahertz technique. This investigation would provide a new insight into anti-counterfeiting applications in fields that need security.

Surface Modification of Photoresist SU-8 for Low Autofluorescence and Bioanalytical Applications

DEFF Research Database (Denmark)

Cao, Cuong; Birtwell, Sam W.; Høgberg, Jonas

2011-01-01

This paper reports a surface modification of epoxy-based negative photoresist SU-8 for reducing its autofluorescence while enhancing its biofunctionality. By covalently depositing a thin layer of 20 nm Au nanoparticles (AuNPs) onto the SU-8 surface, we found that the AuNPs-coated SU-8 surface...... is much less fluorescent than the untreated SU-8. Moreover, DNA probes can easily be immobilized on the Au surface and are thermally stable over a wide range of temperature. These improvements will benefit bioanalytical applications such as DNA hybridization and solid-phase PCR (SP-PCR)....

Fabricating microfluidic valve master molds in SU-8 photoresist

Science.gov (United States)

Dy, Aaron J.; Cosmanescu, Alin; Sluka, James; Glazier, James A.; Stupack, Dwayne; Amarie, Dragos

2014-05-01

Multilayer soft lithography has become a powerful tool in analytical chemistry, biochemistry, material and life sciences, and medical research. Complex fluidic micro-circuits require reliable components that integrate easily into microchips. We introduce two novel approaches to master mold fabrication for constructing in-line micro-valves using SU-8. Our fabrication techniques enable robust and versatile integration of many lab-on-a-chip functions including filters, mixers, pumps, stream focusing and cell-culture chambers, with in-line valves. SU-8 created more robust valve master molds than the conventional positive photoresists used in multilayer soft lithography, but maintained the advantages of biocompatibility and rapid prototyping. As an example, we used valve master molds made of SU-8 to fabricate PDMS chips capable of precisely controlling beads or cells in solution.

Fabricating microfluidic valve master molds in SU-8 photoresist

International Nuclear Information System (INIS)

Dy, Aaron J; Cosmanescu, Alin; Sluka, James; Glazier, James A; Amarie, Dragos; Stupack, Dwayne

2014-01-01

Multilayer soft lithography has become a powerful tool in analytical chemistry, biochemistry, material and life sciences, and medical research. Complex fluidic micro-circuits require reliable components that integrate easily into microchips. We introduce two novel approaches to master mold fabrication for constructing in-line micro-valves using SU-8. Our fabrication techniques enable robust and versatile integration of many lab-on-a-chip functions including filters, mixers, pumps, stream focusing and cell-culture chambers, with in-line valves. SU-8 created more robust valve master molds than the conventional positive photoresists used in multilayer soft lithography, but maintained the advantages of biocompatibility and rapid prototyping. As an example, we used valve master molds made of SU-8 to fabricate PDMS chips capable of precisely controlling beads or cells in solution. (technical note)

Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

International Nuclear Information System (INIS)

Takano, H.; Hosogi, K.; Kato, T.

1995-01-01

A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

International Nuclear Information System (INIS)

Kim, D.Y.; Ko, J.H.; Park, M.S.; Lee, N.-E.

2008-01-01

Under certain conditions during ITO etching using CH 4 /H 2 /Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity

Fiber Amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten

2017-01-01

The chapter provides a discussion of optical fiber amplifiers and through three sections provides a detailed treatment of three types of optical fiber amplifiers, erbium doped fiber amplifiers (EDFA), Raman amplifiers, and parametric amplifiers. Each section comprises the fundamentals including...... the basic physics and relevant in-depth theoretical modeling, amplifiers characteristics and performance data as a function of specific operation parameters. Typical applications in fiber optic communication systems and the improvement achievable through the use of fiber amplifiers are illustrated....

Synthesis and field emission properties of carbon nanotubes grown in ethanol flame based on a photoresist-assisted catalyst annealing process

International Nuclear Information System (INIS)

Yang Xiaoxia; Fang Guojia; Liu Nishuang; Wang Chong; Zheng Qiao; Zhou Hai; Zhao Dongshan; Long Hao; Liu Yuping; Zhao Xingzhong

2009-01-01

Carbon nanotubes (CNTs) have been grown directly on a Si substrate without a diffusion barrier in ethanol diffusion flame using Ni as the catalyst after a photoresist-assisted catalyst annealing process. The growth mechanism of as-synthesized CNTs is confirmed by scanning electron microscopy, high resolution transmission-electron microscopy and energy-dispersive spectroscopy. The photoresist is the key for the formation of active catalyst particles during annealing process, which then result in the growth of CNTs. The catalyst annealing temperature has been found to affect the morphologies and field electron emission properties of CNTs significantly. The field emission properties of as-grown CNTs are investigated with a diode structure and the obtained CNTs exhibit enhanced characteristics. This technique will be applicable to a low-cost fabrication process of electron-emitter arrays.

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and

Print-to-pattern dry film photoresist lithography

International Nuclear Information System (INIS)

Garland, Shaun P; Murphy, Terrence M Jr; Pan, Tingrui

2014-01-01

Here we present facile microfabrication processes, referred to as print-to-pattern dry film photoresist (DFP) lithography, that utilize the combined advantages of wax printing and DFP to produce micropatterned substrates with high resolution over a large surface area in a non-cleanroom setting. The print-to-pattern methods can be performed in an out-of-cleanroom environment making microfabrication much more accessible to minimally equipped laboratories. Two different approaches employing either wax photomasks or wax etchmasks from a solid ink desktop printer have been demonstrated that allow the DFP to be processed in a negative tone or positive tone fashion, respectively, with resolutions of 100 µm. The effect of wax melting on resolution and as a bonding material was also characterized. In addition, solid ink printers have the capacity to pattern large areas with high resolution, which was demonstrated by stacking DFP layers in a 50 mm × 50 mm woven pattern with 1 mm features. By using an office printer to generate the masking patterns, the mask designs can be easily altered in a graphic user interface to enable rapid prototyping. (technical note)

Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

International Nuclear Information System (INIS)

Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

1989-01-01

The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

Alkali-developable silicone-based negative photoresist (SNP) for deep UV, electron beam, and X-ray lithographies

International Nuclear Information System (INIS)

Ban, Hiroshi; Tanaka, Akinobu; Kawai, Yoshio; Deguchi, Kimiyoshi

1989-01-01

A new silicone-based negative photoresist (SNP) developable with alkaline aqueous solutions is prepared. SNP composed of acetylated phenylsilsesquioxane oligomer and azidopyrene is applied to deep UV, electron beam (EB), and X-ray lithographies. SNP slightly swells in alkaline developers, thus exhibiting exceptionally high resolution characteristics for a negative resist. The resistance of SNP to oxygen reactive ion etching is approximately 30 times greater than that of conventional novolac resists. (author)

Understanding dissolution behavior of 193nm photoresists in organic solvent developers

Science.gov (United States)

Lee, Seung-Hyun; Park, Jong Keun; Cardolaccia, Thomas; Sun, Jibin; Andes, Cecily; O'Connell, Kathleen; Barclay, George G.

2012-03-01

Herein, we investigate the dissolution behavior of 193-nm chemically amplified resist in different organic solvents at a mechanistic level. We previously reported the effect of solvent developers on the negative tone development (NTD) process in both dry and immersion lithography, and demonstrated various resist performance parameters such as photospeed, critical dimension uniformity, and dissolution rate contrast are strongly affected by chemical nature of the organic developer. We further pursued the investigation by examining the dependence of resist dissolution behavior on their solubility properties using Hansen Solubility Parameter (HSP). The effects of monomer structure, and resist composition, and the effects of different developer chemistry on dissolution behaviors were evaluated by using laser interferometry and quartz crystal microbalance. We have found that dissolution behaviors of methacrylate based resists are significantly different in different organic solvent developers such as OSDTM-1000 Developer* and n-butyl acetate (nBA), affecting their resist performance. This study reveals that understanding the resist dissolution behavior helps to design robust NTD materials for higher resolution imaging.

Micro-scale metallization on flexible polyimide substrate by Cu electroplating using SU-8 photoresist mask

International Nuclear Information System (INIS)

Cho, S.H.; Kim, S.H.; Lee, N.-E.; Kim, H.M.; Nam, Y.W.

2005-01-01

Technologies for flexible electronics have been developed to make electronic or microelectromechanical (MEMS) devices on inexpensive and flexible organic substrates. In order to fabricate the interconnect lines between device elements or layers in flexible electronic devices, metallization on the flexible substrate is essential. In this case, the width and conductivity of metallization line are very important for minimizing the size of device. Therefore, the realization of metallization process with the scale of a few micrometers on the flexible substrate is required. In this work, micro-scale metallization lines of Cu were fabricated on the flexible substrate by electroplating using the patterned mask of a negative-tone SU-8 photoresist. Polyimide surface was treated by O 2 /Ar atmospheric plasma for the improvement in adhesion between Cr layer and polyimide and in situ sputter deposition of 100-nm-thick Cu seed layers on the sputter-deposited 50-nm-thick Cr adhesion layer was followed. SU-8 photoresist was spin-coated and patterned by photolithography. Electroplating of Cu line, removal of SU-8, and selective wet etch of Cr adhesion and Cu seed layers were carried out. Gap between the Cu lines was successfully filled by spin-coating of polyimide. Micro-scale Cu metal lines with gap filling on the polyimide substrate with a thickness of 6-12 μm and an aspect ratio of 1-3 were successfully fabricated

Operation amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2008-01-01

To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-07-01

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing

Science.gov (United States)

Ashe, Brian; Deverich, Christina; Rabidoux, Paul A.; Peck, Barbara; Petrillo, Karen E.; Angelopoulos, Marie; Huang, Wu-Song; Moreau, Wayne M.; Medeiros, David R.

2002-03-01

The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch process to produce patterns in chrome. ZEP was employed for dry etch processing to meet the requirements of shrinking dimensions, optical proximity corrections and phase shift masks. However, ZEP offers low contrast, marginal etch resistance, organic solvent development, and concerns regarding resist heating with its high dose requirements1. Chemically Amplified Resist (CAR) systems are a very good choice for dimensions less than 180nm because of their high sensitivity and contrast, high resolution, dry etch resistance, aqueous development, and process latitude2. KRS-XE was developed as a high contrast CA resist based on ketal protecting groups that eliminate the need for post exposure bake (PEB). This resist can be used for a variety of electron beam exposures, and improves the capability to fabricate masks for devices smaller than 180nm. Many factors influence the performance of resists in mask making such as post apply bake, exposure dose, resist develop, and post exposure bake. These items will be discussed as well as the use of reactive ion etching (RIE) selectivity and pattern transfer.

Amplifier Distortion

Science.gov (United States)

Keeports, David

2006-12-01

By definition, a high fidelity amplifier's instantaneous output voltage is directly proportional to its instantaneous input voltage. While high fidelity is generally valued in the amplification of recorded music, nonlinearity, also known as distortion, is desirable in the amplification of some musical instruments. In particular, guitar amplifiers exploit nonlinearity to increase both the harmonic content and sustain of a guitar's sound. I will discuss how both modifications in sound result from saturation of triode tubes and transistors. Additionally, I will describe the difference in the symmetry of saturation curves for transistors and tubes and the reason why tube guitar amplifiers are generally considered to be superior to solid-state amplifiers. Finally, I will discuss attempts to use solid-state electronics to replicate the sound of tube amplifiers.

Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3Superlattices

KAUST Repository

Liu, Heng-Jui

2015-12-09

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In the pursuit of novel functionalities by utilizing the lattice degree of freedom in complex oxide heterostructure, the control mechanism through direct strain manipulation across the interfaces is still under development, especially with various stimuli, such as electric field, magnetic field, light, etc. In this study, the superlattices consisting of colossal-magnetoresistive manganites La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO) have been designed to investigate the light-dependent controllability of lattice order in the corresponding functionalities and rich interface physics. Two substrates, SrTiO3 (STO) and LaAlO3 (LAO), have been employed to provide the different strain environments to the superlattice system, in which the LSMO sublayers exhibit different orbital occupations. Subsequently, by introducing light, we can modulate the strain state and orbital preference of LSMO sublayers through light-induced expansion of SRO sublayers, leading to surprisingly opposite changes in photoresistivity. The observed photoresistivity decreases in the superlattice grown on STO substrate while increases in the superlattice grown on LAO substrate under light illumination. This work has presented a model system that demonstrates the manipulation of orbital-lattice coupling and the resultant functionalities in artificial oxide superlattices via light stimulus. A fascinating model system of optic-driven functionalities has been achieved by artificial superlattices consisting of manganite La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO). With design of different initial strain and orbital states in superlattices, we can even control the photoresistivity of the superlattices in an opposite trend that cannot be achieved in pure single film.

Fabrication of tunable diffraction grating by imprint lithography with photoresist mold

Science.gov (United States)

Yamada, Itsunari; Ikeda, Yusuke; Higuchi, Tetsuya

2018-05-01

We fabricated a deformable transmission silicone [poly(dimethylsiloxane)] grating using a two-beam interference method and imprint lithography and evaluated its optical characteristics during a compression process. The grating pattern with 0.43 μm depth and 1.0 μm pitch was created on a silicone surface by an imprinting process with a photoresist mold to realize a simple, low-cost fabrication process. The first-order diffraction transmittance of this grating reached 10.3% at 632.8 nm wavelength. We also measured the relationship between the grating period and compressive stress to the fabricated elements. The grating period changed from 1.0 μm to 0.84 μm by 16.6% compression of the fabricated element in one direction, perpendicular to the grooves, and the first-order diffraction transmittance was 8.6%.

Pulsed hydrogen fluoride laser oscillator-amplifier experiments

International Nuclear Information System (INIS)

Schott, G.L.

1975-01-01

Pulsed HF chemical laser oscillator energies were scaled from millijoules to several kilojoules over the period 1970-1974, reaching approximately 10 J with SF 6 and transverse discharges, and using electron-beam initiation and elemental F 2 above 1000J. This demonstrated scalability to large energy with acceptable electrical efficiency is only one prerequisite for application of this gas laser in fusion; equally important matters are achievement of focusable, approximately 1 ns pulses, couplable to light-element targets, all from an affordable system. Exploratory MOPA experiments are reported which address control of HF laser beam focusability and pulse duration, using SF 6 -based experimental oscillator--amplifier sequences and Pockels' cell switching. Simultaneous multiline lasing with 2.6 less than or equal to lambda less than or equal to 3.1 μm and high specific gain and energy density are particularly important factors encountered with HF, where amplifier pumping and lasing occur in a substantially cw temporal relationship, even in less than 100 ns bursts. Time-resolved SF 6 --HI oscillator spectra contain 27 simultaneous lines from six vibrational bands. An apertured, SF 6 -hydrocarbon pin-discharge oscillator generates approximately 10 mJ of TEM 00 radiation, which is amplified to approximately 1 J in approximately 150 ns by a TEA amplifier and p []opagated tens of meters. A three-stage system coupling these elements through an approximately 1 ns electrooptic gate to a greater than 10 J, e-beam energized amplifier is under development. (auth)

Microwave-Assisted Syntheses in Recyclable Ionic Liquids: Photoresists Based on Renewable Resources.

Science.gov (United States)

Petit, Charlotte; Luef, Klaus P; Edler, Matthias; Griesser, Thomas; Kremsner, Jennifer M; Stadler, Alexander; Grassl, Bruno; Reynaud, Stéphanie; Wiesbrock, Frank

2015-10-26

The copoly(2-oxazoline) pNonOx80 -stat-pDc(=) Ox20 can be synthesized from the cationic ring-opening copolymerization of 2-nonyl-2-oxazoline NonOx and 2-dec-9'-enyl-2-oxazoline Dc(=) Ox in the ionic liquid n-hexyl methylimidazolium tetrafluoroborate under microwave irradiation in 250 g/batch quantities. The polymer precipitates upon cooling, enabling easy recovery of the polymer and the ionic liquid. Both monomers can be obtained from fatty acids from renewable resources. pNonOx80 -stat-pDc(=) Ox20 can be used as polymer in a photoresist (resolution of 1 μm) based on UV-induced thiol-ene reactions. © 2015 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Auto-Zero Differential Amplifier

Science.gov (United States)

Quilligan, Gerard T. (Inventor); Aslam, Shahid (Inventor)

2017-01-01

An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

Low-cost multilevel microchannel lab on chip: DF- 1000 series dry film photoresist as a promising enabler

OpenAIRE

Courson , Rémi; Cargou , Sébastien; Conédéra , Véronique; Fouet , Marc; Blatché , Charline; Serpentini , C.L.; Gué , Anne-Marie

2014-01-01

International audience; We demonstrate the use of a novel dry film photoresist DF-1000 series for the fabrication of multilevel microfluidic devices by combining a standard lithography technique and lamination technology. The optimization of the technological process enables achievement of high aspect ratio structures: 7 : 1 for free standing structures and 5 : 1 for channel structures. We proved that DF films feature a low autofluorescence level, similar to that of the SU-8 resist and compat...

Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

Science.gov (United States)

Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

2017-07-01

The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O2sbnd CF4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of Csbnd O, Osbnd Cdbnd O, Cdbnd O and sbnd NO2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

Science.gov (United States)

Thibaut, Sophie; Raley, Angélique; Lazarrino, Frederic; Mao, Ming; De Simone, Danilo; Piumi, Daniele; Barla, Kathy; Ko, Akiteru; Metz, Andrew; Kumar, Kaushik; Biolsi, Peter

2018-04-01

The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost but retain their inherent variability and process complexity. EUV lithography offers a much desired path that allows for direct print of line and space at 36nm pitch and below and effectively addresses issues like cycle time, intra-level overlay and mask count costs associated with multi-patterning. However it also brings its own sets of challenges. One of the major barrier to high volume manufacturing implementation has been hitting the 250W power exposure required for adequate throughput [1]. Enabling patterning using a lower dose resist could help move us closer to the HVM throughput targets assuming required performance for roughness and pattern transfer can be met. As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.

Portable musical instrument amplifier

Science.gov (United States)

Christian, David E.

1990-07-24

The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2011-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, S.; Nauta, Bram

2007-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

Diffusion and solubility of Au implanted into the AZ1350 photoresist

International Nuclear Information System (INIS)

Soares, M.R.F.; Kaschny, J.R.A.; Santos, J.H.R. dos; Amaral, L.; Behar, M.; Fink, D.

2000-01-01

In the present paper we report diffusion and solubility results for Au into the photoresist AZ1350. Au was implanted into AZ1350 films at very low energy (E=20 keV) and fluences (PHI=10 12 and 5x10 12 Au/cm 2 ). In this way the radiation damage introduced by the implantation process was minimized and cluster formation was avoided. Annealing was performed in the 150-300 deg. C temperature range and the as implanted and thermal treated samples were analyzed using the Rutherford backscattering (RBS) technique. For the lowest implantation fluence the results have shown a regular atomic diffusion process characterized by an activation energy of E a =640 meV. Instead, for PHI=5x10 12 Au/cm 2 the diffusional mechanism has revealed the effects of the radiation damage. In addition solubility measurements indicate that the solubility limit at 250 deg. C is of the order 0.3 at.%

A new fabrication process for uniform SU-8 thick photoresist structures by simultaneously removing edge bead and air bubbles

International Nuclear Information System (INIS)

Lee, Hun; Lee, Kangsun; Ahn, Byungwook; Xu, Jing; Xu, Linfeng; Oh, Kwang W

2011-01-01

This paper proposes a new SU-8 fabrication process to simultaneously remove edge bead and tiny air bubbles by spraying out edge bead removal (EBR) fluid over the entire surface of photoresist. In particular, the edge bead and air bubbles can cause an air gap between a film mask and a photoresist surface during UV exposure. The diffraction effect of UV light by the air gap leads to inaccurate and non-uniform SU-8 patterns. In this study, we demonstrate a simple method using EBR treatment to simultaneously eliminate the edge bead at the edge of wafer and tiny air bubbles inside SU-8. The profiles of thickness variation of SU-8 films with/without the EBR treatment are measured. The results show that the proposed EBR treatment can successfully remove the edge bead and air bubbles over the entire SU-8 films. The average pattern uniformity of SU-8 is improved from 50.5% to 11.3% in the case of 200 µm thickness. This method is simple and inexpensive, compared to a standard EBR process, because it does not require specialized equipment and it can be applied regardless of substrate geometry (e.g. circular wafer and rectangular slide glass).

Distributed feedback laser amplifiers combining the functions of amplifiers and channel filters

DEFF Research Database (Denmark)

Wang, Z.; Durhuus, T.; Mikkelsen, Benny

1994-01-01

A dynamic model for distributed feedback amplifiers, including the mode coupled equations and the carrier rate equation, is established. The presented mode coupled equations have taken into account the interaction between fast changing optical signal and the waveguide with corrugations. By showin...... the possibility of amplifying 100 ps pulses without pulse broadening, we anticipate that a distributed feedback amplifier can be used as a combined amplifier and channel filter in high bit rate transmission systems....

Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

KAUST Repository

Jiang, Jing; Zhang, Ben; Yu, Mufei; Li, Li; Neisser, Mark; Sung Chun, Jun; Giannelis, Emmanuel P.; Ober, Christopher K.

2015-01-01

© 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.

Degradation effects ad Si-depth profiling in photoresists using ion beam analysis

International Nuclear Information System (INIS)

Ijzendoorn, L.J. van; Schellekens, J.P.W.

1989-01-01

The reaction of silicon-containing vapour with a photoresist layer, as used in dry developable lithographic processes, was studied with Rutherford backscattering spectrometry (RBS). Degradation of the polymer layer was observed, but the total amount of incorporated Si was found to be constant during the measurement. Si-depth profiles were found to be independent of dose and in agreement with profiles obtained with secondary ion mass spectrometry (SIMS). The detection of hydrogen by elastic recoil detection (ERD) was used to study the degradation in detail. The decrease in hydrogen countrate from a layer of polystyrene on Si in combination with the shift of the Si-substrate edge in the corresponding RBS spectra was used for a model description. Only one degradation cross-section for hydrogen and one for carbon, both independent of beam current and dose, were required for a successful fit of the experimental data. (orig.)

Antares laser power amplifier

International Nuclear Information System (INIS)

Stine, R.D.; Ross, G.F.; Silvernail, C.

1979-01-01

The overall design of the Antares laser power amplifier is discussed. The power amplifier is the last stage of amplification in the 100-kJ Antares laser. In the power amplifier a single, cylindrical, grid-controlle, cold-cathode electron gun is surrounded by 12 large-aperture CO 2 electron-beam sustained laser discharge sectors. Each power amplifier will deliver 18 kJ and the six modules used in Antares will produce the required 100 kJ for delivery to the target. A large-scale interaction between optical, mechanical, and electrical disciplines is required to meet the design objectives. Significant component advances required by the power amplifier design are discussed

Amplification factor variable amplifier

NARCIS (Netherlands)

Akitsugu, Oshita; Nauta, Bram

2007-01-01

PROBLEM TO BE SOLVED: To provide an amplification factor variable amplifier capable of achieving temperature compensation of an amplification factor over a wide variable amplification factor range. ; SOLUTION: A Gilbert type amplification factor variable amplifier 11 amplifies an input signal and

Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

International Nuclear Information System (INIS)

Chaghi, R; Cervera, C; Aït-Kaci, H; Grech, P; Rodriguez, J B; Christol, P

2009-01-01

In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current–voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 Ω cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air

Amplification factor variable amplifier

NARCIS (Netherlands)

Akitsugu, Oshita; Nauta, Bram

2010-01-01

PROBLEM TO BE SOLVED: To provide an amplification factor variable amplifier capable of achieving temperature compensation of an amplification factor over a wide variable amplification factor range. ;SOLUTION: A Gilbert type amplification factor variable amplifier 11 amplifies an input signal and can

A superhydrophobic chip based on SU-8 photoresist pillars suspended on a silicon nitride membrane

KAUST Repository

Marinaro, Giovanni; Accardo, Angelo; De Angelis, Francesco; Dane, Thomas; Weinhausen, Britta; Burghammer, Manfred; Riekel, Christian

2014-01-01

We developed a new generation of superhydrophobic chips optimized for probing ultrasmall sample quantities by X-ray scattering and fluorescence techniques. The chips are based on thin Si3N4 membranes with a tailored pattern of SU-8 photoresist pillars. Indeed, aqueous solution droplets can be evaporated and concentrated at predefined positions using a non-periodic pillar pattern. We demonstrated quantitatively the deposition and aggregation of gold glyconanoparticles from the evaporation of a nanomolar droplet in a small spot by raster X-ray nanofluorescence. Further, raster nanocrystallography of biological objects such as rod-like tobacco mosaic virus nanoparticles reveals crystalline macro-domain formation composed of highly oriented nanorods. © 2014 the Partner Organisations.

A superhydrophobic chip based on SU-8 photoresist pillars suspended on a silicon nitride membrane

KAUST Repository

Marinaro, Giovanni

2014-07-28

We developed a new generation of superhydrophobic chips optimized for probing ultrasmall sample quantities by X-ray scattering and fluorescence techniques. The chips are based on thin Si3N4 membranes with a tailored pattern of SU-8 photoresist pillars. Indeed, aqueous solution droplets can be evaporated and concentrated at predefined positions using a non-periodic pillar pattern. We demonstrated quantitatively the deposition and aggregation of gold glyconanoparticles from the evaporation of a nanomolar droplet in a small spot by raster X-ray nanofluorescence. Further, raster nanocrystallography of biological objects such as rod-like tobacco mosaic virus nanoparticles reveals crystalline macro-domain formation composed of highly oriented nanorods. © 2014 the Partner Organisations.

CMOS Current-mode Operational Amplifier

DEFF Research Database (Denmark)

Kaulberg, Thomas

1992-01-01

current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2......A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

Operational amplifiers

CERN Document Server

Dostal, Jiri

1993-01-01

This book provides the reader with the practical knowledge necessary to select and use operational amplifier devices. It presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits.Provides the reader with practical knowledge necessary to select and use operational amplifier devices. Presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits

CMOS Current-mode Operational Amplifier

OpenAIRE

Kaulberg, Thomas

1992-01-01

A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-r...

Simplified design of IC amplifiers

CERN Document Server

Lenk, John

1996-01-01

Simplified Design of IC Amplifiers has something for everyone involved in electronics. No matter what skill level, this book shows how to design and experiment with IC amplifiers. For experimenters, students, and serious hobbyists, this book provides sufficient information to design and build IC amplifier circuits from 'scratch'. For working engineers who design amplifier circuits or select IC amplifiers, the book provides a variety of circuit configurations to make designing easier.Provides basics for all phases of practical design.Covers the most popular forms for amplif

Integrated polymer waveguides for absorbance detection in chemical analysis systems

DEFF Research Database (Denmark)

Mogensen, Klaus Bo; El-Ali, Jamil; Wolff, Anders

2003-01-01

A chemical analysis system for absorbance detection with integrated polymer waveguides is reported for the first time. The fabrication procedure relies on structuring of a single layer of the photoresist SU-8, so both the microfluidic channel network and the optical components, which include planar....... The emphasis of this paper is on the signal-to-noise ratio of the detection and its relation to the sensitivity. Two absorbance cells with an optical path length of 100 μm and 1000 μm were characterized and compared in terms of sensitivity, limit of detection and effective path length for measurements...

Heavy metal incorporated helium ion active hybrid non-chemically amplified resists: Nano-patterning with low line edge roughness

Directory of Open Access Journals (Sweden)

Pulikanti Guruprasad Reddy

2017-08-01

Full Text Available Helium (He ion lithography is being considered as one of the most promising and emerging technology for the manufacturing of next generation integrated circuits (ICs at nanolevel. However, He-ion active resists are rarely reported. In this context, we are introducing a new non-chemically amplified hybrid resist (n-CAR, MAPDSA-MAPDST, for high resolution He-ion beam lithography (HBL applications. In the resist architecture, 2.15 % antimony is incorporated as heavy metal in the form of antimonate. This newly developed resists has successfully used for patterning 20 nm negative tone features at a dose of 60 μC/cm2. The resist offered very low line edge roughness (1.27±0.31 nm for 20 nm line features. To our knowledge, this is the first He-ion active hybrid resist for nanopatterning. The contrast (γ and sensitivity (E0 of this resist were calculated from the contrast curve as 0.73 and 7.2 μC/cm2, respectively.

Heavy metal incorporated helium ion active hybrid non-chemically amplified resists: Nano-patterning with low line edge roughness

Science.gov (United States)

Reddy, Pulikanti Guruprasad; Thakur, Neha; Lee, Chien-Lin; Chien, Sheng-Wei; Pradeep, Chullikkattil P.; Ghosh, Subrata; Tsai, Kuen-Yu; Gonsalves, Kenneth E.

2017-08-01

Helium (He) ion lithography is being considered as one of the most promising and emerging technology for the manufacturing of next generation integrated circuits (ICs) at nanolevel. However, He-ion active resists are rarely reported. In this context, we are introducing a new non-chemically amplified hybrid resist (n-CAR), MAPDSA-MAPDST, for high resolution He-ion beam lithography (HBL) applications. In the resist architecture, 2.15 % antimony is incorporated as heavy metal in the form of antimonate. This newly developed resists has successfully used for patterning 20 nm negative tone features at a dose of 60 μC/cm2. The resist offered very low line edge roughness (1.27±0.31 nm) for 20 nm line features. To our knowledge, this is the first He-ion active hybrid resist for nanopatterning. The contrast (γ) and sensitivity (E0) of this resist were calculated from the contrast curve as 0.73 and 7.2 μC/cm2, respectively.

Improved-Bandwidth Transimpedance Amplifier

Science.gov (United States)

Chapsky, Jacob

2009-01-01

The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

Millimeter-wave power amplifiers

CERN Document Server

du Preez, Jaco

2017-01-01

This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

A discrete-time amplifier based on Thin-Film Trans-Capacitors for sensor systems on foil

OpenAIRE

Raiteri, D.; Roermund, van, A.H.M.; Cantatore, E.

2014-01-01

Organic materials can be used to fabricate sensors for physical and chemical quantities, and also to make electronics. The integration of these two elements holds the promise to enable novel smart-sensors on foil. In this paper, we deal with the design of the first stage of a signal conditioning chain on foil: the amplifier. The poor electrical performance of organic TFTs hampers the design of complex circuits, and negatively affects the characteristics of continuous-time amplifiers. In order...

Oscillators and operational amplifiers

OpenAIRE

Lindberg, Erik

2005-01-01

A generalized approach to the design of oscillators using operational amplifiers as active elements is presented. A piecewise-linear model of the amplifier is used so that it make sense to investigate the eigenvalues of the Jacobian of the differential equations. The characteristic equation of the general circuit is derived. The dynamic nonlinear transfer characteristic of the amplifier is investigated. Examples of negative resistance oscillators are discussed.

FLUIDIC AC AMPLIFIERS.

Science.gov (United States)

Several fluidic tuned AC Amplifiers were designed and tested. Interstage tuning and feedback designs are considered. Good results were obtained...corresponding Q’s as high as 12. Element designs and test results of one, two, and three stage amplifiers are presented. AC Modulated Carrier Systems

A CMOS current-mode operational amplifier

DEFF Research Database (Denmark)

Kaulberg, Thomas

1993-01-01

current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2......A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

Modeling of semiconductor optical amplifiers

DEFF Research Database (Denmark)

Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

NASA developments in solid state power amplifiers

Science.gov (United States)

Leonard, Regis F.

1990-01-01

Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

KAUST Repository

Li, Henan

2016-10-31

Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

International Nuclear Information System (INIS)

2005-01-01

Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

Electrospun amplified fiber optics.

Science.gov (United States)

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

Fast pulse amplifier

International Nuclear Information System (INIS)

Lepetit, J.; Poussier, E.

1984-01-01

This amplifier comprises an inverter transformer, the primary circuit of which receives a pulse and the secondary circuit of which is connected to several amplifying elements in parallel. The inverter transformer is made of coaxial cable segments winded around a magnetic torus; the cable cores connected in series constitute the primary circuit and the braiding of cables, connected in parallel, are the secondary circuit. The transformer comprises, besides, delay lines in series with each braiding of the secondary circuit, these ones are such that pulses issued from each braiding arrive together to the secondary circuit connectors. This invention applies, noticeably in the case of a high voltage amplifier, to the control of deflection blocks of particles used in medicine or in particle accelerators [fr

A fluidic/pneumatic interface amplifier

Science.gov (United States)

Limbert, D. E.; Kegel, T. M.

The development of a low cost, reliable, linear pressure amplifier to interface Laminar Proportional Amplifiers (LPA) to pneumatic controllers is presented. The amplifier consists of an LPA input stage and an output stage consisting of a venturi in series with a bellows nozzle valve. The LPA output drives the bellows nozzle valve thereby altering the flowrate through the venturi. The pressure within the venturi throat region, which is the amplifier output, changes with the flowrate. Non-linear characteristics, due to supersonic flow within the venturi, are altered through the use of feedback to the LPA input. A computer based model, to aid in optimizing the amplifier design, is developed. This model incorporates the effects of shock waves and boundary layers within the venturi. Good correspondence between the model and an experimental prototype is shown.

Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration

Science.gov (United States)

D'Urzo, Lucia; Bayana, Hareen; Vandereyken, Jelle; Foubert, Philippe; Wu, Aiwen; Jaber, Jad; Hamzik, James

2017-03-01

Specific "killer-defects", such as micro-line-bridges are one of the key challenges in photolithography's advanced applications, such as multi-pattern. These defects generate from several sources and are very difficult to eliminate. Pointof-use filtration (POU) plays a crucial role on the mitigation, or elimination, of such defects. Previous studies have demonstrated how the contribution of POU filtration could not be studied independently from photoresists design and track hardware settings. Specifically, we investigated how an effective combination of optimized photoresist, filtration rate, filtration pressure, membrane and device cleaning, and single and multilayer filter membranes at optimized pore size could modulate the occurrence of such defects [1, 2, 3 and 4]. However, the ultimate desired behavior for POU filtration is the selective retention of defect precursor molecules contained in commercially available photoresist. This optimal behavior can be achieved via customized membrane functionalization. Membrane functionalization provides additional non-sieving interactions which combined with efficient size exclusion can selectively capture certain defect precursors. The goal of this study is to provide a comprehensive assessment of membrane functionalization applied on an asymmetric ultra-high molecular weight polyethylene (UPE) membrane at different pore size. Defectivity transferred in a 45 nm line 55 nm space (45L/55S) pattern, created through 193 nm immersion (193i) lithography with a positive tone chemically amplified resist (PT-CAR), has been evaluated on organic under-layer coated wafers. Lithography performance, such as critical dimensions (CD), line width roughness (LWR) and focus energy matrix (FEM) is also assessed.

Amplifier for nuclear spectrometry

International Nuclear Information System (INIS)

Suarez Canner, E.

1996-01-01

The spectroscopy amplifier model AE-020 is designed to adjust suitable the pulses coming from nuclear radiation detectors. Due to is capacity and specifications, the amplifier can be used together with high and medium resolution spectroscopy system

Modeling FWM and impairments aware amplifiers placement technique for an optical MAN/WAN: Inline amplifiers case

Science.gov (United States)

Singh, Gurpreet; Singh, Maninder Lal

2015-08-01

A new four wave mixing (FWM) model for an optical network with amplifiers and a comparative analysis among three proposed amplifiers placement techniques have been presented in this paper. The FWM model is validated with the experimental measured data. The novelty of this model is its uniqueness that on direct substitutions of network parameters like length, it works even for unequal inter amplifier separations. The novelty of the analysis done among three schemes is that it presents fair choice of amplifiers placement methods for varied total system length. The appropriateness of these three schemes has been analyzed on the basis of critical system length, critical number of amplifiers and critical bit error rate (10-9) in presence of four wave mixing (FWM) and amplified spontaneous emission noise (ASE). The implementation of analysis done has been given with the help of an example of a regenerative metropolitan area network (MAN). The results suggest that the decreasing fiber section scheme should be avoided for placements of amplifiers and schemes IUFS and EFS shows their importance interchangeably for different set of parameters.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

NIF/LMJ prototype amplifier mechanical design

International Nuclear Information System (INIS)

Horvath, J.

1996-10-01

Amplifier prototypes for the National Ignition Facility and the Laser Megajoule will be tested at Lawrence Livermore National Laboratory. The prototype amplifier, which is an ensemble of modules from LLNL and Centre d'Etudes de Limeil-Valenton, is cassette-based with bottom access for maintenance. A sealed maintenance transfer vehicle which moves optical cassettes between the amplifier and the assembly cleanroom, and a vacuum gripper which holds laser slabs during cassette assembly will also be tested. The prototype amplifier will be used to verify amplifier optical performance, thermal recovery time, and cleanliness of mechanical operations

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

Science.gov (United States)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

Assembly and maintenance of full scale NIF amplifiers in the amplifier module prototype laboratory (AMPLAB)

International Nuclear Information System (INIS)

Horvath, J. A.

1998-01-01

Mechanical assembly and maintenance of the prototype National Ignition Facility amplifiers in the Amplifier Module Prototype Laboratory (AMPLAB) at Lawrence Livermore National Laboratory requires specialized equipment designed to manipulate large and delicate amplifier components in a safe and clean manner. Observations made during the operation of this assembly and maintenance equipment in AMPLAB provide design guidance for similar tools being built for the National Ignition Facility. Fixtures used for amplifier frame installation, laser slab and flashlamp cassette assembly, transport, and installation, and in-situ blastshield exchange are presented. Examples include a vacuum slab gripper, slab handling clean crane, slab cassette assembly fixture, sealed transport vehicle for slab cassette movement between the cleanroom and amplifier, slab cassette transfer fixture between the cleanroom and transport vehicle, and equipment needed for frame assembly unit, blastshield, an d flashlamp cassette installation and removal. The use of these tools for amplifier assembly, system reconfiguration, reflector replacement, and recovery from an abnormal occurrence such as a flashlamp explosion is described. Observations are made on the design and operation of these tools and their contribution to the final design

Sub-50 nm metrology on extreme ultra violet chemically amplified resist—A systematic assessment

International Nuclear Information System (INIS)

Maas, D. J.; Herfst, R.; Veldhoven, E. van; Fliervoet, T.; Meessen, J.; Vaenkatesan, V.; Sadeghian, H.

2015-01-01

With lithographic patterning dimensions decreasing well below 50 nm, it is of high importance to understand metrology at such small scales. This paper presents results obtained from dense arrays of contact holes (CHs) with various Critical Dimension (CD) between 15 and 50 nm, as patterned in a chemically amplified resist using an ASML EUV scanner and measured at ASML and TNO. To determine the differences between various (local) CD metrology techniques, we conducted an experiment using optical scatterometry, CD-Scanning Electron Microscopy (CD-SEM), Helium ion Microscopy (HIM), and Atomic Force Microscopy (AFM). CD-SEM requires advanced beam scan strategies to mitigate sample charging; the other tools did not need that. We discuss the observed main similarities and differences between the various techniques. To this end, we assessed the spatial frequency content in the raw images for SEM, HIM, and AFM. HIM and AFM resolve the highest spatial frequencies, which are attributed to the more localized probe-sample interaction for these techniques. Furthermore, the SEM, HIM, and AFM waveforms are analyzed in detail. All techniques show good mutual correlation, albeit the reported CD values systematically differ significantly. HIM systematically reports a 25% higher CD uniformity number than CD-SEM for the same arrays of CHs, probably because HIM has a higher resolution than the CD-SEM used in this assessment. A significant speed boost for HIM and AFM is required before these techniques are to serve the demanding industrial metrology applications like optical critical dimension and CD-SEM do nowadays

European Research on THz Vacuum Amplifiers

DEFF Research Database (Denmark)

Brunetti, F.; Cojocarua, C.-S.; de Rossi, A.

2010-01-01

The OPTHER (OPtically Driven TeraHertz AmplifiERs) project represents a considerable advancement in the field of high frequency amplification. The design and realization of a THz amplifier within this project is a consolidation of efforts at the international level from the main players...... of the European research, academy and industry in vacuum electronics. This paper describes the status of the project and progress towards the THz amplifier realization....

Integrated amplifying circuit with MOS transistors

Energy Technology Data Exchange (ETDEWEB)

Baylac, B; Merckel, G; Meunier, P

1974-01-25

The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

NARCIS (Netherlands)

Acar, M.

2011-01-01

In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

Enhanced performance CCD output amplifier

Science.gov (United States)

Dunham, Mark E.; Morley, David W.

1996-01-01

A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

Transmission characteristics of acoustic amplifier in thermoacoustic engine

International Nuclear Information System (INIS)

Sun Daming; Qiu Limin; Wang Bo; Xiao Yong

2008-01-01

Thermoacoustic engines are promising in practical applications for the merits of simple configuration, reliable operation and environmentally friendly working gas. An acoustic amplifier can increase the output pressure amplitude of a thermoacoustic engine (TE) and improve the matching between the engine and its load. In order to make full use of an acoustic amplifier, the transmission characteristics are studied based on linear thermoacoustic theory. Computational and experimental results show that the amplifying ability of an acoustic amplifier is mainly determined by its geometry parameters and output resistance impedance. The amplifying ability of an acoustic amplifier with appropriate length and diameter reaches its maximum when the output resistance impedance is infinite. It is also shown that the acoustic amplifier consumes an amount of acoustic power when amplifying pressure amplitude and the acoustic power consumption increases with amplifying ratio. Furthermore, a novel cascade acoustic amplifier is proposed, which has a much stronger amplifying ability with reduced acoustic power consumption. In experiments, a two-stage cascade acoustic amplifier amplifies the pressure ratio from 1.177 to 1.62 and produces a pressure amplitude of 0.547 MPa with nitrogen of 2.20 MPa as working gas. Good agreements are obtained between the theoretical analysis and experimental results. This research is instructive for comprehensively understanding the mechanism and making full use of the acoustic amplifier

Gas-phase hydrosilylation of cyclohexene in an experimental radiation-chemical accelerator apparatus

International Nuclear Information System (INIS)

Pecherkin, A.S.; Sidorov, V.I.; Chernyshev, E.A.

1992-01-01

A process for the synthesis of methylcyclohexyldichlorosilane (a basic monomer for the production of organosilicon photoresists) has been investigated and perfected on an experimental apparatus with an ELV-2 electron accelerator; this synthesis involves gas-phase radiation-induced hydrosilylation of cyclohexene by methyldichlorosilane. Basic characteristics of the yield of the desired product under static conditions were determined. With the help of experiments on the synthesis of methylcyclohexyldichlorosilane in a flow- through mode, the technical features of the process of radiation-chemical hydrosilylation of cyclohexene on an accelerator apparatus were determined and studied, the optimal conditions for the synthesis were determined, and an experimental batch of the desired product was produced

Functionalization of SU-8 photoresist surfaces with IgG proteins

International Nuclear Information System (INIS)

Blagoi, Gabriela; Keller, Stephan; Johansson, Alicia; Boisen, Anja; Dufva, Martin

2008-01-01

The negative epoxy-based photoresist SU-8 has a variety of applications within microelectromechanical systems (MEMS) and lab-on-a-chip systems. Here, several methods to functionalize SU-8 surfaces with IgG proteins were investigated. Fluorescent labeled proteins and fluorescent sandwich immunoassays were employed to characterize the binding efficiency of model proteins to bare SU-8 surface, SU-8 treated with cerium ammonium nitrate (CAN) etchant and CAN treated surfaces modified by aminosilanization. The highest binding capacity of antibodies was observed on bare SU-8. This explains why bare SU-8 in a functional fluorescent sandwich immunoassay detecting C-reactive protein (CRP) gave twice as high signal as compared with the other two surfaces. Immunoassays performed on bare SU-8 and CAN treated SU-8 resulted in detection limits of CRP of 30 and 80 ng/ml respectively which is sufficient for detecting CRP in clinical samples, where concentrations of 3-10 μg/ml are normal for healthy individuals. In conclusion, bare SU-8 and etched SU-8 can be modified with antibodies by a simple adsorption procedure which simplifies building lab-on-a-chip systems in SU-8. Additionally, we report the fabrication process and use of microwells created in a SU-8 layer with the same dimensions as a standard microscope glass slide that could fit into fluorescent scanners. The SU-8 microwells minimize the reagent consumption and are straightforward to handle compared to SU-8 coated microscope slides

Alternative Chemical Amplification Methods for Peroxy Radical Detection

Science.gov (United States)

Wood, E. C. D.

2014-12-01

Peroxy radicals (HO2, CH3O2, etc.) are commonly detected by the chemical amplification technique, in which ambient air is mixed with high concentrations of CO and NO, initiating a chain reaction that produces 30 - 200 NO2 molecules per sampled peroxy radical. The NO2 is then measured by one of several techniques. With the exception of CIMS-based techniques, the chemical amplification method has undergone only incremental improvements since it was first introduced in 1982. The disadvantages of the technique include the need to use high concentrations of CO and the greatly reduced sensitivity of the amplification chain length in the presence of water vapor. We present a new chemical amplification scheme in which either ethane or acetaldehyde is used in place of CO, with the NO2 product detected using Cavity Attenuated Phase Shift spectroscopy (CAPS). Under dry conditions, the amplification factor of the alternative amplifiers are approximately six times lower than the CO-based amplifier. The relative humidity "penalty" is not as severe, however, such that at typical ambient relative humidity (RH) values the amplification factor is within a factor of three of the CO-based amplifier. Combined with the NO2 sensitivity of CAPS and a dual-channel design, the detection limit of the ethane amplifier is less than 2 ppt (1 minute average, signal-to-noise ratio 2). The advantages of these alternative chemical amplification schemes are improved safety, a reduced RH correction, and increased sensitivity to organic peroxy radicals relative to HO2.

Final amplifier design and mercury

International Nuclear Information System (INIS)

Rose, E.A.; Hanson, D.E.

1991-01-01

The final amplifier for the Mercury KrF excimer facility is being designed. The design exercise involves extensive modeling to predict amplifier performance. Models of the pulsed-power system, including a Child-Langmuir diode with closure, electron-beam energy deposition, KrF laser kinetics, amplified spontaneous emission (ASE), a time-dependent laser extraction in the presence of ASE are presented as a design package. The design exercise indicates that the energy objective of Phase I -- 100 joules -- will be met

A pulse amplifier for nuclear instrumentation

International Nuclear Information System (INIS)

Martin, D.; Cliff, P.

1987-01-01

A Class-A 1 Watt amplifier has been designed and optimized for nanosecond pulses. Spanning .01MHz to 1300Mhz, signal gain is 26dB with gain flatness of 1dB. The amplifier drive +- 10 volts across 500 with 350ps risetime. Each amplifier is housed in a 2-wide NIM

An Implantable CMOS Amplifier for Nerve Signals

DEFF Research Database (Denmark)

Nielsen, Jannik Hammel; Lehmann, Torsten

2003-01-01

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

Fast logarithmic amplifier

International Nuclear Information System (INIS)

Tai, I.; Hasegawa, K.

1975-01-01

This paper reports on the improvement of frequency characteristics of a logarithmic amplifier with a Paterson transdiode connection. The improvement of the response speed has been achieved by using a phase compensation technique. Small signal response analyses of the logging circuit revealed the effects of a series resistor Rsub(p) and a parallel capacitance Csub(p) on the response of the circuit. The improvement of the frequency characteristics are remarkable at higher current levels. These facts were proved by the practical logarithmic amplifier. (auth.)

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-06-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-04-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Flashlamp excited fluid laser amplified

International Nuclear Information System (INIS)

1976-01-01

The patent describes a laser amplifier with chambers for containing and amplifying an intensifier medium. It serves the need for a large impulse repetition rate and high intensities as required e.g. for laser isotope separation

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

NARCIS (Netherlands)

Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

2002-01-01

This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

Effects of vacuum ultraviolet photons, ion energy and substrate temperature on line width roughness and RMS surface roughness of patterned 193 nm photoresist

International Nuclear Information System (INIS)

Titus, M J; Graves, D B; Yamaguchi, Y; Hudson, E A

2011-01-01

We present a comparison of patterned 193 nm photoresist (PR) line width roughness (LWR) of samples processed in a well characterized argon (Ar) inductively coupled plasma (ICP) system to RMS surface roughness and bulk chemical modification of blanket 193 nm PR samples used as control samples. In the ICP system, patterned and blanket PR samples are irradiated with Ar vacuum ultraviolet photons (VUV) and Ar ions while sample temperature, photon flux, ion flux and ion energy are controlled and measured. The resulting chemical modifications to bulk 193 nm PR (blanket) and surface roughness are analysed with Fourier transform infrared spectroscopy and atomic force microscopy (AFM). LWR of patterned samples are measured with scanning electron microscopy and blanket portions of the patterned PRs are measured with AFM. We demonstrate that with no RF-bias applied to the substrate the LWR of 193 nm PR tends to smooth and correlates with the smoothing of the RMS surface roughness. However, both LWR and RMS surface roughness increases with simultaneous high-energy (≥70 eV) ion bombardment and VUV-irradiation and is a function of exposure time. Both high- and low-frequency LWR correlate well with the RMS surface roughness of the patterned and blanket 193 nm PR samples. LWR, however, does not increase with temperatures ranging from 20 to 80 deg. C, in contrast to the RMS surface roughness which increases monotonically with temperature. It is unclear why LWR remains independent of temperature over this range. However, the fact that blanket roughness and LWR on patterned samples, both scale similarly with VUV fluence and ion energy suggests a similar mechanism is responsible for both types of surface morphology modifications.

Effects of vacuum ultraviolet photons, ion energy and substrate temperature on line width roughness and RMS surface roughness of patterned 193 nm photoresist

Energy Technology Data Exchange (ETDEWEB)

Titus, M J; Graves, D B [Department of Chemical Engineering, University of California, Berkeley, CA 94720 (United States); Yamaguchi, Y; Hudson, E A, E-mail: graves@berkeley.edu [Lam Research Corporation, 4400 Cushing Parkway, Freemont, CA 94538 (United States)

2011-03-02

We present a comparison of patterned 193 nm photoresist (PR) line width roughness (LWR) of samples processed in a well characterized argon (Ar) inductively coupled plasma (ICP) system to RMS surface roughness and bulk chemical modification of blanket 193 nm PR samples used as control samples. In the ICP system, patterned and blanket PR samples are irradiated with Ar vacuum ultraviolet photons (VUV) and Ar ions while sample temperature, photon flux, ion flux and ion energy are controlled and measured. The resulting chemical modifications to bulk 193 nm PR (blanket) and surface roughness are analysed with Fourier transform infrared spectroscopy and atomic force microscopy (AFM). LWR of patterned samples are measured with scanning electron microscopy and blanket portions of the patterned PRs are measured with AFM. We demonstrate that with no RF-bias applied to the substrate the LWR of 193 nm PR tends to smooth and correlates with the smoothing of the RMS surface roughness. However, both LWR and RMS surface roughness increases with simultaneous high-energy ({>=}70 eV) ion bombardment and VUV-irradiation and is a function of exposure time. Both high- and low-frequency LWR correlate well with the RMS surface roughness of the patterned and blanket 193 nm PR samples. LWR, however, does not increase with temperatures ranging from 20 to 80 deg. C, in contrast to the RMS surface roughness which increases monotonically with temperature. It is unclear why LWR remains independent of temperature over this range. However, the fact that blanket roughness and LWR on patterned samples, both scale similarly with VUV fluence and ion energy suggests a similar mechanism is responsible for both types of surface morphology modifications.

Challenges in higher order mode Raman amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Nielsen, Kristian; Friis, Søren Michael Mørk

2015-01-01

A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed......A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed...

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

Science.gov (United States)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Small signal microwave amplifier design

CERN Document Server

Grosch, Theodore

2000-01-01

This book explains techniques and examples for designing stable amplifiers for high-frequency applications in which the signal is small and the amplifier circuit is linear. An in-depth discussion of linear network theory provides the foundation needed to develop actual designs. Examples throughout the book will show you how to apply the knowledge gained in each chapter leading to the complex design of low noise amplifiers. Many exercises at the end of each chapter will help students to practice their skills. The solutions to these design problems are available in an accompanying solutions book

Noise in Optical Amplifiers

DEFF Research Database (Denmark)

Jeppesen, Palle

1997-01-01

Noise in optical amplifiers is discussed on the basis of photons and electromagntic fields. Formulas for quantum noise from spontaneous emission, signal-spontaneous beat noise and spontaneous-spontaneous beat noise are derived.......Noise in optical amplifiers is discussed on the basis of photons and electromagntic fields. Formulas for quantum noise from spontaneous emission, signal-spontaneous beat noise and spontaneous-spontaneous beat noise are derived....

Amplified spontaneous emissions in a high-gain laser amplifier

International Nuclear Information System (INIS)

Osada, Hidenori; Gamo, Hideya.

1978-01-01

The gain and line-narrowing of the amplified spontaneous emissions(ASE) in a partially homogeneous high-gain Xe 3.51 μm laser amplifier were studied theoretically and experimentally with emphasis of saturation effect. The unidirectionally travelling ASE was generated by conveniently using optical isolators and used as a broadband radiation source. It has properties of 10 μW/mm 2 in intensity with fluctuation of less than 1% in 5 hours, 43.5 MHz of the linewidth and 1.0 x 10 -3 radians of beam divergence. The measured saturation intensity was 4.85 μW/mm 2 and a small signal gain was 0.1 cm -1 . The theoretical prediction of the line-narrowing shows reasonablly good agreement with the measured one. (author)

Dual-range linearized transimpedance amplifier system

Science.gov (United States)

Wessendorf, Kurt O.

2010-11-02

A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).

Detection of Non-Amplified Genomic DNA

CERN Document Server

Corradini, Roberto

2012-01-01

This book offers a state-of-the-art overview on non amplified DNA detection methods and provides chemists, biochemists, biotechnologists and material scientists with an introduction to these methods. In fact all these fields have dedicated resources to the problem of nucleic acid detection, each contributing with their own specific methods and concepts. This book will explain the basic principles of the different non amplified DNA detection methods available, highlighting their respective advantages and limitations. The importance of non-amplified DNA sequencing technologies will be also discussed. Non-amplified DNA detection can be achieved by adopting different techniques. Such techniques have allowed the commercialization of innovative platforms for DNA detection that are expected to break into the DNA diagnostics market. The enhanced sensitivity required for the detection of non amplified genomic DNA has prompted new strategies that can achieve ultrasensitivity by combining specific materials with specifi...

Is there a role for amplifiers in sexual selection?

Science.gov (United States)

Gualla, Filippo; Cermelli, Paolo; Castellano, Sergio

2008-05-21

The amplifier hypothesis states that selection could favour the evolution of traits in signallers that improve the ability of receivers to extract honest information from other signals or cues. We provide a formal definition of amplifiers based on the receiver's mechanisms of signal perception and we present a game-theoretical model in which males advertise their quality and females use sequential-sampling tactics to choose among prospective mates. The main effect of an amplifier on the female mating strategy is to increase her mating threshold, making the female more selective as the effectiveness of the amplifier increases. The effects of the amplifier on male advertising strategy depends both on the context and on the types of the amplifier involved. We consider two different contexts for the evolution of amplifiers (when the effect of amplifiers is on signals and when it is on cues) and two types of amplifiers (the 'neutral amplifier', when it improves quality assessment without altering male attractiveness, and the 'attractive amplifier', when it improves both quality assessment and male attractiveness). The game-theoretical model provides two main results. First, neutral and attractive amplifiers represent, respectively, a conditional and an unconditional signalling strategy. In fact, at the equilibrium, neutral amplifiers are displayed only by males whose advertising level lays above the female acceptance threshold, whereas attractive amplifiers are displayed by all signalling males, independent of their quality. Second, amplifiers of signals increase the differences in advertising levels between amplifying and not-amplifying males, but they decrease the differences within each group, so that the system converges towards an 'all-or-nothing' signalling strategy. By applying concepts from information theory, we show that the increase in information transfer at the perception level due to the amplifier of signals is contrasted by a decrease in information

An Implantable CMOS Amplifier for Nerve Signals

DEFF Research Database (Denmark)

Nielsen, Jannik Hammel; Lehmann, Torsten

2001-01-01

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

Operational amplifiers theory and design

CERN Document Server

Huijsing, Johan

2017-01-01

This proven textbook guides readers to a thorough understanding of the theory and design of operational amplifiers (OpAmps). The core of the book presents systematically the design of operational amplifiers, classifying them into a periodic system of nine main overall configurations, ranging from one gain stage up to four or more stages. This division enables circuit designers to recognize quickly, understand, and choose optimal configurations. Characterization of operational amplifiers is given by macro models and error matrices, together with measurement techniques for their parameters. Definitions are given for four types of operational amplifiers depending on the grounding of their input and output ports. Many famous designs are evaluated in depth, using a carefully structured approach enhanced by numerous figures. In order to reinforce the concepts introduced and facilitate self-evaluation of design skills, the author includes problems with detailed solutions, as well as simulation exercises. Provides te...

Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation

NARCIS (Netherlands)

Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

2005-01-01

Low Noise Amplifiers (LNAs) are commonly used to amplify signals that are too weak for direct processing for example in radio or cable receivers. Traditionally, low noise amplifiers are implemented via tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. This can render

Excluded volume effects caused by high concentration addition of acid generators in chemically amplified resists used for extreme ultraviolet lithography

Science.gov (United States)

Kozawa, Takahiro; Watanabe, Kyoko; Matsuoka, Kyoko; Yamamoto, Hiroki; Komuro, Yoshitaka; Kawana, Daisuke; Yamazaki, Akiyoshi

2017-08-01

The resolution of lithography used for the high-volume production of semiconductor devices has been improved to meet the market demands for highly integrated circuits. With the reduction in feature size, the molecular size becomes non-negligible in the resist material design. In this study, the excluded volume effects caused by adding high-concentration acid generators were investigated for triphenylsulfonium nonaflate. The resist film density was measured by X-ray diffractometry. The dependences of absorption coefficient and protected unit concentration on acid generator weight ratio were calculated from the measured film density. Using these values, the effects on the decomposition yield of acid generators, the protected unit fluctuation, and the line edge roughness (LER) were evaluated by simulation on the basis of sensitization and reaction mechanisms of chemically amplified extreme ultraviolet resists. The positive effects of the increase in acid generator weight ratio on LER were predominant below the acid generator weight ratio of 0.3, while the negative effects became equivalent to the positive effects above the acid generator weight ratio of 0.3 owing to the excluded volume effects.

Phase noise in RF and microwave amplifiers.

Science.gov (United States)

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

Enhanced Gain in Photonic Crystal Amplifiers

DEFF Research Database (Denmark)

Ek, Sara; Semenova, Elizaveta; Hansen, Per Lunnemann

2012-01-01

We experimentally demonstrate enhanced gain in the slow-light regime of quantum well photonic crystal amplifiers. A strong gain enhancement is observed with the increase of the group refractive index, due to light slow-down. The slow light enhancement is shown in a amplified spontaneous emission....... These results are promising for short and efficient semiconductor optical amplifiers. This effect will also benefit other devices, such as mode locked lasers....

A system for biasing a differential amplifier

International Nuclear Information System (INIS)

Barbier, Daniel; Ittel, J.M.; Poujois, Robert

1975-01-01

This invention concerns a system for biasing a differential amplifier. It particularly applies to the integrated differential amplifiers designed with MOS field effect transistors. Variations in the technological parameters may well cause the amplifying transistors to work outside their usual operational area, in other words outside the linear part of the transfer characteristic. To ensure that these transistors function correctly, it is necessary that the value of the voltage difference at the output be equally null. To do this and to centre on the so called 'rest' point of the amplifier transfer charateristic, the condition will be set that the output potentials of each amplifier transistor should have a zero value or a constant value as sum. With this in view, the bias on the source (generally a transistor powered by its grid bias voltage) supplying current to the two amplifying transistors fitted in parallel, is permanently adjusted in a suitable manner [fr

The fabrication of diversiform nanostructure forests based on residue nanomasks synthesized by oxygen plasma removal of photoresist

Energy Technology Data Exchange (ETDEWEB)

Mao Haiyang; Wu Di; Wu Wengang; Hao Yilong [National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing 100871 (China); Xu Jun, E-mail: wuwg@ime.pku.edu.c [Electron Microscopy Laboratory, Peking University, Beijing 100871 (China)

2009-11-04

A simple lithography-free approach for fabricating diversiform nanostructure forests is presented. The key technique of the approach is that randomly distributed nanoscale residues can be synthesized on substrates simply by removing photoresist with oxygen plasma bombardment. These nanoresidues can function as masks in the subsequent etching process for nanopillars. By further spacer and then deep etching processes, a variety of forests composed of regular, tulip-like or hollow-head nanopillars as well as nanoneedles are successfully achieved in different etching conditions. The pillars have diameters of 30-200 nm and heights of 400 nm-3 {mu}m. The needles reach several microns in height, with their tips less than 10 nm in diameter. Moreover, microstructures containing these nanostructure forests, such as surface microchannels, have also been fabricated. This approach is compatible with conventional micro/nano-electromechanical system (MEMS/NEMS) fabrication.

The fabrication of diversiform nanostructure forests based on residue nanomasks synthesized by oxygen plasma removal of photoresist

International Nuclear Information System (INIS)

Mao Haiyang; Wu Di; Wu Wengang; Hao Yilong; Xu Jun

2009-01-01

A simple lithography-free approach for fabricating diversiform nanostructure forests is presented. The key technique of the approach is that randomly distributed nanoscale residues can be synthesized on substrates simply by removing photoresist with oxygen plasma bombardment. These nanoresidues can function as masks in the subsequent etching process for nanopillars. By further spacer and then deep etching processes, a variety of forests composed of regular, tulip-like or hollow-head nanopillars as well as nanoneedles are successfully achieved in different etching conditions. The pillars have diameters of 30-200 nm and heights of 400 nm-3 μm. The needles reach several microns in height, with their tips less than 10 nm in diameter. Moreover, microstructures containing these nanostructure forests, such as surface microchannels, have also been fabricated. This approach is compatible with conventional micro/nano-electromechanical system (MEMS/NEMS) fabrication.

Solid-state disk amplifiers for fusion-laser systems

Energy Technology Data Exchange (ETDEWEB)

Martin, W.E.; Trenholme, J.B.; Linford, G.J.; Yarema, S.M.; Hurley, C.A.

1981-09-01

We review the design, performance, and operation of large-aperture (10 to 46 cm) solid-state disk amplifiers for use in laser systems. We present design data, prototype tests, simulations, and projections for conventional cylindrical pump-geometry amplifiers and rectangular pump-geometry disk amplifiers. The design of amplifiers for the Nova laser system is discussed.

Novel EUV photoresist for sub-7nm node (Conference Presentation)

Science.gov (United States)

Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

2017-04-01

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

Highly efficient silver patterning without photo-resist using simple silver precursors

International Nuclear Information System (INIS)

Byun, Younghun; Hwang, Eoc-Chae; Lee, Sang-Yun; Lyu, Yi-Yeol; Yim, Jin-Heong; Kim, Jin-Young; Chang, Seok; Pu, Lyong Sun; Kim, Ji Man

2005-01-01

Highly efficient method for silver patterning without photo-resist was developed by using high photosensitive organo-silver precursors, which were prepared by a simple reaction of silver salts and excess of amines. The FT-IR and GC-MS spectra were recorded depending on UV exposure time, for (n-PrNH 2 )Ag(NO 3 ).0.5MeCN and (n-PrNH 2 )Ag(NO 2 ).0.5MeCN, to understand the photolysis mechanism. The results indicate not only dissociation of coordinated amine and acetonitrile, but also decomposition of corresponding anion upon UV irradiation. When a precursor thin film was exposed to broadband UV irradiation, a partially reduced and insoluble silver species were formed within several minutes. After development, the irradiated areas were treated with a reducing agent to obtain pure metallic patterns. Subsequently, annealing step was followed at 100-350 deg. C to increase the adhesion of interface and cohesion of silver particles. The line resolution of 5 μm was obtained by the present silver precursors. Film thickness was also controllable from 50 to 250 nm by repetition of the above procedure. The average electrical conductivity was in the range of 3-43 Ω cm, measured by four-point probe technique. AES depth profile of the silver pattern thus obtained showed carbon and oxygen contents are less than 1% through the whole range. Even though sulfur contaminant exists on the surface, it was believed that nearly pure silver pattern was generated

Multi-pass amplifier architecture for high power laser systems

Science.gov (United States)

Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

2014-04-01

A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

Design of an 1800nm Raman amplifier

DEFF Research Database (Denmark)

Svane, Ask Sebastian; Rottwitt, Karsten

2013-01-01

We present the experimental results for a Raman amplifier that operates at 1810 nm and is pumped by a Raman fiber laser at 1680 nm. Both the pump laser and the Raman amplifier is polarization maintaining. A challenge when scaling Raman amplifiers to longer wavelengths is the increase...... in transmission loss, but also the reduction in the Raman gain coefficient as the amplifier wavelength is increased. Both polarization components of the Raman gain is characterized, initially for linearly co-polarized signal and pump, subsequently linearly polarized orthogonal signal and pump. The noise...

Remote Acquisition Amplifier For 50-Ohm Cable

Science.gov (United States)

Amador, Jose J.

1995-01-01

Buffer-amplifier unit designed to drive 50-Ohm cables up to 100 ft. (30 m) long, compensating for attenuation in cables and enabling remote operation of oscilloscopes. Variable resistor provides for adjustment of gain of amplifier, such that overall gain from input terminals of amplifier to output end of cable set to unity.

Multiple excitation regenerative amplifier inertial confinement system

International Nuclear Information System (INIS)

George, V.E.; Haas, R.A.; Krupke, W.F.; Schlitt, L.G.

1980-01-01

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation

Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: Comparison with bulk amplifiers

DEFF Research Database (Denmark)

Borri, P.; Langbein, W.; Hvam, Jørn Märcher

2001-01-01

The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain...

The OPTHER Project: Progress toward the THz Amplifier

DEFF Research Database (Denmark)

Paoloni, C; Brunetti, F; Di Carlo, A

2011-01-01

This paper describes the status of the OPTHER (OPtically driven TeraHertz AmplifiERs) project and progress toward the THz amplifier realization. This project represents a considerable advancement in the field of high frequency amplification. The design and realization of a THz amplifier within...... this project is a consolidation of efforts at the international level from the leading scientific and industrial European organizations working with vacuum electronics....

Spectroscopic amplifier for pin diode

International Nuclear Information System (INIS)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

2014-10-01

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

Science.gov (United States)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

Automatic error compensation in dc amplifiers

International Nuclear Information System (INIS)

Longden, L.L.

1976-01-01

When operational amplifiers are exposed to high levels of neutron fluence or total ionizing dose, significant changes may be observed in input voltages and currents. These changes may produce large errors at the output of direct-coupled amplifier stages. Therefore, the need exists for automatic compensation techniques. However, previously introduced techniques compensate only for errors in the main amplifier and neglect the errors induced by the compensating circuitry. In this paper, the techniques introduced compensate not only for errors in the main operational amplifier, but also for errors induced by the compensation circuitry. Included in the paper is a theoretical analysis of each compensation technique, along with advantages and disadvantages of each. Important design criteria and information necessary for proper selection of semiconductor switches will also be included. Introduced in this paper will be compensation circuitry for both resistive and capacitive feedback networks

Co-fabrication of chitosan and epoxy photoresist to form microwell arrays with permeable hydrogel bottoms

Science.gov (United States)

Ornoff, Douglas M.; Wang, Yuli; Proctor, Angela; Shah, Akash S.; Allbritton, Nancy L.

2015-01-01

Microfabrication technology offers the potential to create biological platforms with customizable patterns and surface chemistries, allowing precise control over the biochemical microenvironment to which a cell or group of cells is exposed. However, most microfabricated platforms grow cells on impermeable surfaces. This report describes the co-fabrication of a micropatterned epoxy photoresist film with a chitosan film to create a freestanding array of permeable, hydrogel-bottomed microwells. These films possess optical properties ideal for microscopy applications, and the chitosan layers are semi-permeable with a molecular exclusion of 9.9 ± 2.1 kDa. By seeding cells into the microwells, overlaying inert mineral oil, and supplying media via the bottom surface, this hybrid film permits cells to be physically isolated from one another but maintained in culture for at least 4 days. Arrays co-fabricated using these materials reduce both large-molecular-weight biochemical crosstalk between cells and mixing of different clonal populations, and will enable high-throughput studies of cellular heterogeneity with increased ability to customize dynamic interrogations compared to materials in currently available technologies. PMID:26447557

Quantum electronics maser amplifiers and oscillators

CERN Document Server

Fain, V M; Sanders, J H

2013-01-01

Quantum Electronics, Volume 2: Maser Amplifiers and Oscillators deals with the experimental and theoretical aspects of maser amplifiers and oscillators which are based on the principles of quantum electronics. It shows how the concepts and equations used in quantum electronics follow from the basic principles of theoretical physics.Comprised of three chapters, this volume begins with a discussion on the elements of the theory of quantum oscillators and amplifiers working in the microwave region, along with the practical achievements in this field. Attention is paid to two-level paramagnetic ma

Class-E Amplifier Design Improvements for GSM Frequencies

Directory of Open Access Journals (Sweden)

Z. Nadir

2011-06-01

Full Text Available Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is the continuation of previous work by the authors. These nonlinear power amplifiers can only amplify constant-envelope RF signals without introducing significant distortion. Mobile systems such as Advanced Mobile Phone System (AMPS and Global System for Mobile communications (GSM use modulation schemes which generate constant amplitude RF outputs in order to use efficient but nonlinear power amplifiers. Improvements in designs are suggested and higher efficiencies are achieved, to the tune of 67.1% (for 900 MHz and 67.0% (1800 MHz.

Amplified OTDR Systems for Multipoint Corrosion Monitoring

Science.gov (United States)

Nascimento, Jehan F.; Silva, Marcionilo J.; Coêlho, Isnaldo J. S.; Cipriano, Eliel; Martins-Filho, Joaquim F.

2012-01-01

We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations. PMID:22737017

Bandwidth tunable amplifier for recording biopotential signals.

Science.gov (United States)

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

BROADBAND TRAVELLING WAVE SEMICONDUCTOR OPTICAL AMPLIFIER

DEFF Research Database (Denmark)

2010-01-01

Broadband travelling wave semiconductor optical amplifier (100, 200, 300, 400, 800) for amplification of light, wherein the amplifier (100, 200, 300, 400, 800) comprises a waveguide region (101, 201, 301, 401, 801) for providing confinement of the light in transverse directions and adapted...

A modular positive feedback-based gene amplifier

Directory of Open Access Journals (Sweden)

Bhalerao Kaustubh D

2010-02-01

Full Text Available Abstract Background Positive feedback is a common mechanism used in the regulation of many gene circuits as it can amplify the response to inducers and also generate binary outputs and hysteresis. In the context of electrical circuit design, positive feedback is often considered in the design of amplifiers. Similar approaches, therefore, may be used for the design of amplifiers in synthetic gene circuits with applications, for example, in cell-based sensors. Results We developed a modular positive feedback circuit that can function as a genetic signal amplifier, heightening the sensitivity to inducer signals as well as increasing maximum expression levels without the need for an external cofactor. The design utilizes a constitutively active, autoinducer-independent variant of the quorum-sensing regulator LuxR. We experimentally tested the ability of the positive feedback module to separately amplify the output of a one-component tetracycline sensor and a two-component aspartate sensor. In each case, the positive feedback module amplified the response to the respective inducers, both with regards to the dynamic range and sensitivity. Conclusions The advantage of our design is that the actual feedback mechanism depends only on a single gene and does not require any other modulation. Furthermore, this circuit can amplify any transcriptional signal, not just one encoded within the circuit or tuned by an external inducer. As our design is modular, it can potentially be used as a component in the design of more complex synthetic gene circuits.

Realization of OFCC based Transimpedance Mode Instrumentation Amplifier

Directory of Open Access Journals (Sweden)

Neeta Pandey

2016-01-01

Full Text Available The paper presents an instrumentation amplifier suitable for amplifying the current source transducer signals. It provides a voltage output. It has a high gain, common mode rejection ratio and gain independent bandwidth. It uses three Operational Floating Current Conveyors (OFCCs and four resistors. The effect of nonidealities of OFCC on performance of proposed transimpedance instrumentation amplifier (TIA is also analyzed. The proposal has been verified through SPICE simulations using CMOS based schematicThe paper presents an instrumentation amplifier suitable for amplifying the current source transducer signals. It provides a voltage output. It has a high gain, common mode rejection ratio and gain independent bandwidth. It uses three operational floating current conveyors (OFCCs and four resistors. The effect of nonidealities of OFCC on performance of proposed transimpedance instrumentation amplifier (TIA is also analyzed. The proposal has been verified through SPICE simulations using CMOS based schematic.

Quantum-Limited Directional Amplifiers with Optomechanics

Science.gov (United States)

Malz, Daniel; Tóth, László D.; Bernier, Nathan R.; Feofanov, Alexey K.; Kippenberg, Tobias J.; Nunnenkamp, Andreas

2018-01-01

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave signals in an electromechanical setup comprising two microwave cavities and two mechanical resonators. We show that both can reach their respective quantum limits on added noise. In the reverse direction, they emit thermal noise stemming from the mechanical resonators; we discuss how this noise can be suppressed, a crucial aspect for technological applications. The isolation bandwidth in both is of the order of the mechanical linewidth divided by the amplitude gain. We derive the bandwidth and gain-bandwidth product for both and find that the phase-sensitive amplifier has an unlimited gain-bandwidth product. Our study represents an important step toward flexible, on-chip integrated nonreciprocal amplifiers of microwave signals.

Integrated wide-band low-background amplifiers

International Nuclear Information System (INIS)

Il'yushchenko, I.I.

1980-01-01

Ways of increasing stability and reproduction of characteristics of wide-band integral amplifiers that would to the least extent increase their background noises, are discussed. Considered are some certain flowsheets of integral wide-band amplifiers with low background noise of foreign production which differ from one another by construction of inlet cascades as well as by the applied feedback type. The principal flowsheets of the amplifiers and their main performances are presented. The analysis of the data obtained has revealed that microcircuits made of cascades with a common emitter and local combined feedback are most wide-band among all the considered microcircuits [ru

Advances in high-power rf amplifiers

International Nuclear Information System (INIS)

Tallerico, P.J.

1979-01-01

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

Class D audio amplifiers for high voltage capacitive transducers

DEFF Research Database (Denmark)

Nielsen, Dennis

of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice......Audio reproduction systems contains two key components, the amplifier and the loudspeaker. In the last 20 – 30 years the technology of audio amplifiers have performed a fundamental shift of paradigm. Class D audio amplifiers have replaced the linear amplifiers, suffering from the well-known issues...... with the low level of acoustical output power and complex amplifier requirements, have limited the commercial success of the technology. Horn or compression drivers are typically favoured, when high acoustic output power is required, this is however at the expense of significant distortion combined...

Amplified Policymaking

Science.gov (United States)

Prince, Katherine; Woempner, Carolyn

2010-01-01

This brief examines the policy implications of two drivers of change presented in the "2020 Forecast: Creating the Future of Learning"-- Pattern Recognition and Amplified Organization. These drivers point toward a series of cultural shifts and illuminate how we are developing new ways of organizing, constructing, and managing knowledge.…

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

International Nuclear Information System (INIS)

Wang Hanchao; Huang Lirong; Shi Zhongwei

2011-01-01

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influencedby the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. (semiconductor devices)

CARM and harmonic gyro-amplifier experiments at 17 GHz

International Nuclear Information System (INIS)

Menninger, W.L.; Danly, B.G.; Alberti, S.; Chen, C.; Rullier, J.L.; Temkin, R.J.

1993-01-01

Cyclotron resonance maser amplifiers are possible sources for applications such as electron cyclotron resonance heating of fusion plasmas and driving high-gradient rf linear accelerators. For accelerator drivers, amplifiers or phase locked-oscillators are required. A 17 GHz cyclotron autoresonance maser (CARM) amplifier experiment and a 17 GHz third harmonic gyro-amplifier experiment are presently underway at the MIT Plasma Fusion Center. Using the SRL/MIT SNOMAD II introduction accelerator to provide a 380 kV, 180 A, 30 ns flat top electron beam, the gyro-amplifier experiment has produced 5 MW of rf power with over 50 dB of gain at 17 GHz. The gyro-amplifier operates in the TE 31 mode using a third harmonic interaction. Because of its high power output, the gyro-amplifier will be used as the rf source for a photocathode rf electron gun experiment also taking place at MIT. Preliminary gyro-amplifier results are presented, including measurement of rf power, gain versus interaction length, and the far-field pattern. A CARM experiment designed to operate in the TE 11 mode is also discussed

Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

Science.gov (United States)

Hunt, Mitchell; Sayyah, Rana; MacLeod, Todd C.; Ho, Fat D.

2011-01-01

In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

The design of high performance weak current integrated amplifier

International Nuclear Information System (INIS)

Chen Guojie; Cao Hui

2005-01-01

A design method of high performance weak current integrated amplifier using ICL7650 operational amplifier is introduced. The operating principle of circuits and the step of improving amplifier's performance are illustrated. Finally, the experimental results are given. The amplifier has programmable measurement range of 10 -9 -10 -12 A, automatic zero-correction, accurate measurement, and good stability. (authors)

Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

DEFF Research Database (Denmark)

Berg, Tommy Winther

2004-01-01

This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

Analog circuit design designing high performance amplifiers

CERN Document Server

Feucht, Dennis

2010-01-01

The third volume Designing High Performance Amplifiers applies the concepts from the first two volumes. It is an advanced treatment of amplifier design/analysis emphasizing both wideband and precision amplification.

High power X-band coaxial amplifier experiments

International Nuclear Information System (INIS)

Davis, T.J.; Nation, J.A.

1991-01-01

Studies are continuing on the development of X-band coaxial microwave amplifiers as a source for next generation linear colliders. Coaxial amplifiers employ an annular electron beam propagating between inner and outer drift tube conductors, a configuration which allows large increases in beam current over standard pencil beam amplifiers. Large average diameter systems may still be used without mode competition since TM mode cutoff frequencies are controlled by the separation between conductors. A number of amplifier configurations are being studied, all primed by a driven initial cavity which resonates around 9 GHz. Simple theory of coaxial systems and particle-in-cell simulations are presented, as well as initial experimental results using a 420 keV, 7-8 kA, 9 cm diameter annular beam

Wideband multi-element Er-doped fiber amplifier

International Nuclear Information System (INIS)

Thipparapu, N K; Jain, S; May-Smith, T C; Sahu, J K

2014-01-01

A multi-element Er-doped fiber amplifier (MEEDFA) is demonstrated in which the gain profile is extended into the S and L bands. Each fiber element of the MEEDFA is found to provide a maximum gain of 37 dB and a noise figure of < 4 dB in the C-band. The gain profile of the amplifier is shifted towards longer wavelength by cascading fiber elements. The novel geometry of the multi-element fiber (MEF) could allow for the development of a broadband amplifier in a split-band configuration. The proposed amplifier can operate in the wavelength band of 1520 to 1595 nm (75 nm), with a minimum gain of 20 dB. (letter)

Supercritical CO2 drying of poly(methyl methacrylate) photoresist for deep x-ray lithography: a brief note

Science.gov (United States)

Shukla, Rahul; Abhinandan, Lala; Sharma, Shivdutt

2017-07-01

Poly(methyl methacrylate) (PMMA) is an extensively used positive photoresist for deep x-ray lithography. The post-development release of the microstructures of PMMA becomes very critical for high aspect ratio fragile and freestanding microstructures. Release of high aspect ratio comb-drive microstructure of PMMA made by one-step x-ray lithography (OXL) is studied. The effect of low-surface tension Isopropyl alcohol (IPA) over water is investigated for release of the high aspect ratio microstructures using conventional and supercritical (SC) CO2 drying. The results of conventional drying are also compared for the samples released or dried in both in-house developed and commercial SC CO2 dryer. It is found that in all cases the microstructures of PMMA are permanently deformed and damaged while using SC CO2 for drying. For free-standing high aspect ratio microstructures of PMMA made by OXL, it is advised to use low-surface tension IPA over DI water. However, this brings a limitation on the design of the microstructure.

A parallel input composite transimpedance amplifier

Science.gov (United States)

Kim, D. J.; Kim, C.

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

Unconditionally stable microwave Si-IMPATT amplifiers

International Nuclear Information System (INIS)

Seddik, M.M.

1986-07-01

The purpose of this investigation has been the development of an improved understanding of the design and analysis of microwave reflection amplifiers employing the negative resistance property of the IMPATT devices. Unconditionally stable amplifier circuit using a Silicon IMPATT diode is designed. The problems associated with the design procedures and the stability criterion are discussed. A computer program is developed to perform the computations. The stable characteristics of a reflection-type Si-IMPATT amplifier, such as gain, frequency and bandwidth are examined. It was found that at large signal drive levels, 7 dB gain with bandwidth of 800 MHz at 22,5 mA was obtained. (author)

Low noise amplifier for ZnS(Ag) scintillation chamber

International Nuclear Information System (INIS)

Do Hoang Cuong

1998-01-01

A new pulse amplifier that can be used with standard photomultiplier tubes coupled with Zn(Ag) scintillation chamber is presented. The amplifier based on an IC operational amplifier LF 356N consists of a low-noise charge sensitive preamplifier and pulse shaping circuits for optimization of signal to noise ratio. Temperature instability is ≤ 0.05%/ o C. Dynamic range for linear output signals is equal +7 V. The presented amplifier is used in a measuring head for 0.17 L Lucas chambers developed in Department of Nuclear Instruments and Methods of the INCT in laboratory investigations aimed to develop methods and instruments for measurement of radon concentration in the air. The amplifier can also be employed for measurement of ionizing radiation by means of other scintillators coupled to PM tube. The amplifier is followed by a pulse discriminator with adjustable discrimination level. The amplifier output signal and discriminator output pulses are fed to external devices. (author)

Transpermeance Amplifier Applied to Magnetic Bearings

Directory of Open Access Journals (Sweden)

Jossana Ferreira

2017-02-01

Full Text Available The most conventional approach of controlling magnetic forces in active magnetic bearings (AMBs is through current feedback amplifiers: transconductance. This enables the operation of the AMB to be understood in terms of a relatively simple current-based model as has been widely reported on in the literature. The alternative notion of using transpermeance amplifiers, which approximate the feedback of gap flux rather than current, has been in commercial use in some form for at least thirty years, however is only recently seeing more widespread acceptance as a commercial standard. This study explores how such alternative amplifiers should be modeled and then examines the differences in behavior between AMBs equipped with transconductance and transpermeance amplifiers. The focus of this study is on two aspects. The first is the influence of rotor displacement on AMB force, commonly modeled as a constant negative equivalent mechanical stiffness, and it is shown that either scheme actually leads to a finite bandwidth effect, but that this bandwidth is much lower when transpermeance is employed. The second aspect is the influence of eddy currents. Using a very simple model of eddy currents (a secondary short-circuited coil, it is demonstrated that transpermeance amplifiers can recover significant actuator bandwidth compared with transconductance, but at the cost of needing increased peak current headroom.

A high-power two stage traveling-wave tube amplifier

International Nuclear Information System (INIS)

Shiffler, D.; Nation, J.A.; Schachter, L.; Ivers, J.D.; Kerslick, G.S.

1991-01-01

Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a ''sideband''-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the ''sidebands'' are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length

Photonic-band-gap gyrotron amplifier with picosecond pulses

Science.gov (United States)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; Shapiro, Michael A.; Temkin, Richard J.

2017-12-01

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Single conversion stage amplifier - SICAM

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.

2005-12-15

This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

Science.gov (United States)

Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

2010-01-01

This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

Class-D audio amplifiers with negative feedback

OpenAIRE

Cox, Stephen M.; Candy, B. H.

2006-01-01

There are many different designs for audio amplifiers. Class-D, or switching, amplifiers generate their output signal in the form of a high-frequency square wave of variable duty cycle (ratio of on time to off time). The square-wave nature of the output allows a particularly efficient output stage, with minimal losses. The output is ultimately filtered to remove components of the spectrum above the audio range. Mathematical models are derived here for a variety of related class-D amplifier de...

Differential transimpedance amplifier circuit for correlated differential amplification

Science.gov (United States)

Gresham, Christopher A [Albuquerque, NM; Denton, M Bonner [Tucson, AZ; Sperline, Roger P [Tucson, AZ

2008-07-22

A differential transimpedance amplifier circuit for correlated differential amplification. The amplifier circuit increase electronic signal-to-noise ratios in charge detection circuits designed for the detection of very small quantities of electrical charge and/or very weak electromagnetic waves. A differential, integrating capacitive transimpedance amplifier integrated circuit comprising capacitor feedback loops performs time-correlated subtraction of noise.

Ring cavity for a Raman capillary waveguide amplifier

Science.gov (United States)

Kurnit, N.A.

1981-01-27

A regenerative ring amplifier and regenerative ring oscillator are described which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO/sub 2/ laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplified Stokes signal is synchronous with the mode-locked spikes of the incoming CO/sub 2/ laser pump signal.

Molecular markers. Amplified fragment length polymorphism

Directory of Open Access Journals (Sweden)

Pržulj Novo

2005-01-01

Full Text Available Amplified Fragment Length Polymorphism molecular markers (AFLPs has been developed combining procedures of RFLPs and RAPDs molekular markers, i.e. the first step is restriction digestion of the genomic DNA that is followed by selective amplification of the restricted fragments. The advantage of the AFLP technique is that it allows rapid generation of a large number of reproducible markers. The reproducibility of AFLPs markers is assured by the use of restriction site-specific adapters and adapter-specific primers for PCR reaction. Only fragments containing the restriction site sequence plus the additional nucleotides will be amplified and the more selected nucleotides added on the primer sequence the fewer the number of fragments amplified by PCR. The amplified products are normally separated on a sequencing gel and visualized after exposure to X-ray film or by using fluorescent labeled primers. AFLP shave proven to be extremely proficient in revealing diversity at below the species level. A disadvantage of AFLP technique is that AFLPs are essentially a dominant marker system and not able to identify heterozygotes.

A high-efficiency superconductor distributed amplifier

Energy Technology Data Exchange (ETDEWEB)

Herr, Q P, E-mail: quentin.herr@ngc.co [Northrop Grumman Corporation, 7323 Aviation Boulevard, Baltimore, MD 21240 (United States)

2010-02-15

A superconductor output amplifier that converts single-flux-quantum signals to a non-return-to-zero pattern is reported using a twelve-stage distributed amplifier configuration. The output amplitude is measured to be 1.75 mV over a wide bias current range of {+-} 12%. The bit error rate is measured using a Delta-Sigma data pattern to be less than 1 x 10{sup -9} at 10 Gb s{sup -1} per channel. Analysis of the eye diagram suggests that the actual bit error rate may be much lower. The amplifier has power efficiency of 12% neglecting the termination resistor, which may be eliminated from the circuit with a small modification. (rapid communication)

Fundamentals of RF and microwave transistor amplifiers

CERN Document Server

Bahl, Inder J

2009-01-01

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

Design And Construction Of 300W Audio Power Amplifier For Classroom

Directory of Open Access Journals (Sweden)

Shune Lei Aung

2015-07-01

Full Text Available Abstract This paper describes the design and construction of 300W audio power amplifier for classroom. In the construction of this amplifier microphone preamplifier tone preamplifier equalizer line amplifier output power amplifier and sound level indicator are included. The output power amplifier is designed as O.C.L system and constructed by using Class B among many types of amplifier classes. There are two types in O.C.L system quasi system and complementary system. Between them the complementary system is used in the construction of 300W audio power amplifier. The Multisim software is utilized for the construction of audio power amplifier.

Self-pulsation in Raman fiber amplifiers

DEFF Research Database (Denmark)

Pedersen, Martin Erland Vestergaard; Ott, Johan Raunkjær; Rottwitt, Karsten

2009-01-01

Dynamic behavior caused by Brillouin scattering in Raman fiber amplifiers is studied. Modes of self-pulsation steady state oscillations are found. Their dependence on amplification scheme is demonstrated.......Dynamic behavior caused by Brillouin scattering in Raman fiber amplifiers is studied. Modes of self-pulsation steady state oscillations are found. Their dependence on amplification scheme is demonstrated....

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

DEFF Research Database (Denmark)

Nielsen, Niels Ole

1976-01-01

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

Note: A high dynamic range, linear response transimpedance amplifier.

Science.gov (United States)

Eckel, S; Sushkov, A O; Lamoreaux, S K

2012-02-01

We have built a high dynamic range (nine decade) transimpedance amplifier with a linear response. The amplifier uses junction-gate field effect transistors (JFETs) to switch between three different resistors in the feedback of a low input bias current operational amplifier. This allows for the creation of multiple outputs, each with a linear response and a different transimpedance gain. The overall bandwidth of the transimpedance amplifier is set by the bandwidth of the most sensitive range. For our application, we demonstrate a three-stage amplifier with transimpedance gains of approximately 10(9)Ω, 3 × 10(7)Ω, and 10(4)Ω with a bandwidth of 100 Hz.

Higher order mode optical fiber Raman amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Friis, Søren Michael Mørk; Usuga Castaneda, Mario A.

2016-01-01

We review higher order mode Raman amplifiers and discuss recent theoretical as well as experimental results including system demonstrations.......We review higher order mode Raman amplifiers and discuss recent theoretical as well as experimental results including system demonstrations....

Stimulated Brillouin scattering threshold in fiber amplifiers

International Nuclear Information System (INIS)

Liang Liping; Chang Liping

2011-01-01

Based on the wave coupling theory and the evolution model of the critical pump power (or Brillouin threshold) for stimulated Brillouin scattering (SBS) in double-clad fiber amplifiers, the influence of signal bandwidth, fiber-core diameter and amplifier gain on SBS threshold is simulated theoretically. And experimental measurements of SBS are presented in ytterbium-doped double-clad fiber amplifiers with single-frequency hundred nanosecond pulse amplification. Under different input signal pulses, the forward amplified pulse distortion is observed when the pulse energy is up to 660 nJ and the peak power is up to 3.3 W in the pulse amplification with pulse duration of 200 ns and repetition rate of 1 Hz. And the backward SBS narrow pulse appears. The pulse peak power equals to SBS threshold. Good agreement is shown between the modeled and experimental data. (authors)

Low-cost amplifier for alpha detection with photodiode

Energy Technology Data Exchange (ETDEWEB)

Domienikan, Cláudio; Costa, Priscila; Genezini, Frederico A.; Zahn, Guilherme S., E-mail: clanikan@ipen.br, E-mail: pcosta@ipen.br, E-mail: fredzini@ipen.br, E-mail: gzahn@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

2017-07-01

A low-cost amplifier for Hamamatsu S3590-09 PIN photodiode to be used in alpha detection is presented. This amplifier consists basically of two circuits: a pulse preamplifier and a shaper-driver. The PIN photodiode is reverse-biased and connected to a charge preamplifier input. Incident alpha particles generate a small current pulse in the photodiode. The integrating circuit of the low noise preamplifier transforms current pulse into a voltage pulse with amplitude proportional to the charge carried by the current pulse. The shaper-driver consists of a differentiator and an integrator and is responsible for filtering and further amplifying the preamplifier signal, generating a NIM-compatible energy pulse. The performance of the set photodiode-amplifier was successively tested through the use of a {sup 243}Am radioactive source. The low-cost photodiode amplifier was designed and constructed at IPEN - CNEN/SP using national components and expertise. (author)

Simulations of longitudinally pumped dye laser amplifier

International Nuclear Information System (INIS)

Takehisa, Kiwamu; Takemori, Satoshi

1995-01-01

Simulations of a copper laser pumped dye laser amplifier and new designs of the longitudinally pumped dye laser amplifier are presented. The simulations take the consideration of the amplified spontaneous emission (ASE). The new designs utilize a center-hole reflector instead of a dichroic mirror. The simulation results indicate that the poor spatial overlap between the pump beam and the dye beam in the transverse pumping not only reduces the laser output power, but also generates ASE strongly. The results also indicate that the longitudinal pumping is as efficient as the transverse pumping. (author)

Pulse shaping amplifier (PSA) for nuclear spectroscopy system

International Nuclear Information System (INIS)

Lombigit, L.; Maslina Mohd Ibrahim; Nolida Yusup; Nur Aira Abdul Rahman; Yong, C.F.

2014-01-01

Pulse Shaping Amplifier (PSA) is an essential components in nuclear spectroscopy system. This networks have two functions; to shape the output pulse and performs noise filtering. In this paper, we describes procedure for design and development of a pulse shaping amplifier which can be used for nuclear spectroscopy system. This prototype was developed using high performance electronics devices and assembled on a FR4 type printed circuit board. Performance of this prototype was tested by comparing it with an equivalent commercial spectroscopy amplifier (Model SILENA 7611). The test results show that the performance of this prototype is comparable to the commercial spectroscopic amplifier. (author)

GaN-based Power amplifiers for microwave applications

Directory of Open Access Journals (Sweden)

Jorge Julián Moreno-Rubio

2016-01-01

Full Text Available This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.

Single-mode operation of a coiled multimode fiber amplifier

International Nuclear Information System (INIS)

Koplow, Jeffrey P.; Kliner, Dahv A. V.; Goldberg, Lew

2000-01-01

We report a new approach to obtaining single-transverse-mode operation of a multimode fiber amplifier in which the gain fiber is coiled to induce significant bend loss for all but the lowest-order mode. We demonstrated this method by constructing a coiled amplifier using Yb-doped, double-clad fiber with a core diameter of 25 μm and a numerical aperture of ∼0.1 (V≅7.4) . When the amplifier was operated as an amplified-spontaneous-emission source, the output beam had an M 2 value of 1.09±0.09 ; when seeded at 1064 nm, the slope efficiency was similar to that of an uncoiled amplifier. This technique will permit scaling of pulsed fiber lasers and amplifiers to significantly higher pulse energies and peak powers and cw fiber sources to higher average powers while maintaining excellent beam quality. (c) 2000 Optical Society of America

Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

Energy Technology Data Exchange (ETDEWEB)

Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

2016-08-01

Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

International Nuclear Information System (INIS)

Mahorowala, A.P.; Medeiros, D.R.

2001-01-01

Positive tone chemically amplified (CA) resists have demonstrated the sensitivity, contrast, and resolution necessary to print state-of-the-art subwavelength features using 248 nm and more recently 193 nm lithography. These materials are also being considered for printing sub-100 nm features with 157 nm and next-generation lithography technologies such as extreme ultraviolet and electron beam projection lithography. The basis for solubility differential and image formation in these resists is the acid catalyzed deprotection of labile protecting groups of an inherently base soluble polymer. The deprotection is effected by the photochemical generation of strong acid during the exposure process. Such acid-catalyzed deprotection reactions can also occur in unexposed resist areas when etched in a plasma. This can be due to UV exposure, high-energy ion bombardment, elevated substrate temperatures, or interaction of the resist surface with plasma species to form acidic moieties. Deprotection has been associated with resist mass loss and film shrinkage during plasma etching, leaving inadequate masking material for the entire etch step. In this article, we report the film thickness loss of several unexposed CA resists as a function of etch time in a variety of plasmas and correlate these data with film composition, monitored by Fourier transform infrared spectroscopy. These results are compared with theoretical predictions based on generally accepted deprotection mechanisms. Our findings indicate that the 'acidic' nature of certain plasmas such as Cl 2 /O 2 can result in deprotection in the resist film, even in the absence of a photoacid generator. Additionally, the data suggest that the nature of the resist polymer and, in turn, the identity of the deprotection products directly influence resist mass loss and etch rate linearity, both of which can be controlled by careful selection of resist materials

Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

Science.gov (United States)

Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

2016-01-01

Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification.

The Nike electron-beam-pumped KrF laser amplifiers

International Nuclear Information System (INIS)

Sethian, J.D.; Pawley, C.J.; Obenschain, S.P.

1997-01-01

Nike is a recently completed multikilojoule krypton-fluoride (KrF) laser that has been built to study the physics of direct-drive inertial confinement fusion. The two final amplifiers of the Nike laser are both electron-beam-pumped systems. This paper describes these two amplifiers, with an emphasis on the pulsed power. The smaller of the two has a 20 x 20 cm aperture, and produces an output laser beam energy in excess of 100 J. This 20 cm Amplifier uses a single 12 kJ Marx generator to inject two 300 kV, 75 kA, 140 ns flat-top electron beams into opposite sides of the laser cell. The larger amplifier in Nike has a 60 x 60 cm aperture, and amplifies the laser beam up to 5 kJ. This 60 cm amplifier has two independent electron beam systems. Each system has a 170 kJ Marx generator that produces a 670 kV, 540 kA, 240 ns flat-top electron beam. Both amplifiers are complete, fully integrated into the laser, meet the Nike system requirements, and are used routinely for laser-target experiments

47 CFR 97.315 - Certification of external RF power amplifiers.

Science.gov (United States)

2010-10-01

.... (2) The amplifier was manufactured before April 28, 1978, and has been issued a marketing waiver by... that operator's station. (3) The amplifier is sold to an amateur radio operator or to a dealer, the amplifier is purchased in used condition by a dealer, or the amplifier is sold to an amateur radio operator...

Pump to signal noise transfer in parametric fiber amplifiers

DEFF Research Database (Denmark)

Lund-Hansen, Toke; Rottwitt, Karsten; Peucheret, Christophe

2010-01-01

Fiber optic parametric amplifiers have been suggested due to their potential low spontaneous emission. However, by nature the parametric amplifier only work in a forward pumped configuration, which result in transfer of relative intensity noise in the pump to the signal.......Fiber optic parametric amplifiers have been suggested due to their potential low spontaneous emission. However, by nature the parametric amplifier only work in a forward pumped configuration, which result in transfer of relative intensity noise in the pump to the signal....

Method for reducing snap in magnetic amplifiers

Science.gov (United States)

Fischer, R. L. E.; Word, J. L.

1968-01-01

Method of reducing snap in magnetic amplifiers uses a degenerative feedback circuit consisting of a resistor and a separate winding on a magnetic core. The feedback circuit extends amplifier range by allowing it to be used at lower values of output current.

Amplifier Design for Proportional Ionization Chambers

Energy Technology Data Exchange (ETDEWEB)

Baker, W. H.

1950-08-24

This paper presents the requirements of a nuclear amplifier of short resolving time, designed to accept pulses of widely varying amplitudes. Data are given which show that a proportional ionization chamber loaded with a 1,000-ohm resistor develops pulses of 0.5 microsecond duration and several volts amplitude. Results indicate that seven basic requirements are imposed on the amplifier when counting soft beta and gamma radiation in the presence of alpha particles, without absorbers. It should, (1) have a fast recovery time, (2) have a relatively good low frequency response, (3) accept pulses of widely varying heights without developing spurious pulsed, (4) have a limiting output stage, (5) preserve the inherently short rise time of the chamber, (6) minimize pulse integration, and (7) have sufficient gain to detect the weak pulses well below the chamber voltage at which continuous discharge takes place. The results obtained with an amplifier which meets these requirements is described. A formula is derived which indicates that redesign of the proportional ionization chamber might eliminate the need for an amplifier. This may be possible if the radioactive particles are collimated parallel to the collecting electrode.

Power Amplifier Design for E-band Wireless System Communications

DEFF Research Database (Denmark)

Hadziabdic, Dzenan; Krozer, Viktor; Johansen, Tom Keinicke

2008-01-01

E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present...... a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output...... power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications...

A new semicustom integrated bipolar amplifier for silicon strip detectors

International Nuclear Information System (INIS)

Zimmerman, T.

1989-01-01

The QPA02 is a four channel DC coupled two stage transimpedance amplifier designed at Fermilab on a semicustom linear array (Quickchip 2S) manufactured by Tektronix. The chip was developed as a silicon strip amplifier but may have other applications as well. Each channel consists of a preamplifier and a second stage amplifier/sharper with differential output which can directly drive a transmission line (90 to 140 ohms). External bypass capacitors are the only discrete components required. QPA02 has been tested and demonstrated to be an effective silicon strip amplifier. Other applications may exist which can use this amplifier or a modified version of this amplifier. For example, another design is now in progress for a wire chamber amplifier, QPA03, to be reported later. Only a relatively small effort was required to modify the design and layout for this application. 11 figs

Pulse amplifier with high 'common mode rejection'

International Nuclear Information System (INIS)

Ijlst, P.

1987-01-01

The input signal of a pulse amplifier contains large 'common-mode' signals which have to be suppressed. A transformer, especially constructed for this purpose, is described. It has been tried to optimize the signal to noise ratio of the pulse amplifier by means of noise analysis. (Auth.)

Behavior of MOSFET Amplifier in Radiation Fields

International Nuclear Information System (INIS)

Sharshar, K.A.A.; Ashry, M.

2000-01-01

MOSFET type 2 N 3823 characteristics and its application as an amplifier are analyzed including the effects of gamma, electron beam 1.5 MeV 25 m A and neutron flux. The 1-V characteristics, transfer curve, and the frequency response of the amplifier, and the amplification factor(A v 0 are discussed with MOSFET circuit parameters. The drain current and the amplitude of the output signal decrease as the absorbed dose increases. The measured values of the amplified signal are attenuated by 30% and 6% after exposing the MOSFET to gamma radiation and electron beam at the same dose respectively. Also for exposure to 4x10 13 N/cm 3 neutrons decreased the measured value of the amplified signal by 73% of the initial values. The decrease in the gain of the MOSFET is due to the degradation of the transconductance. It is also noticed that percentage of the decrease depends on the type of radiation

Low-noise audio amplifiers and preamplifier for use with intrinsic thermocouples

International Nuclear Information System (INIS)

Langner, G.C.; Sachs, R.D.; Stewart, F.L.

1979-03-01

Two simple, low-noise audio amplifiers and one low-noise preamplifier for use with intrinsic thermocouples were designed, built, and tested. The amplifiers and the preamplifier have different front end designs. One amplifier uses ultralow-noise operational amplifiers; the other amplifier uses a hybrid component. The preamplifier uses ultralow-noise discrete components. The amplifiers' equivalent noise inputs, at maximum gain, are 4.09 nV and 50 nV; the preamplifier's input is 4.05 μV. Their bandwidths are 15 600 Hz, 550 Hz, and 174 kHz, respectively. the amplifiers' equivalent noise inputs were measured from approx. 0 to 100 Hz, whereas the preamplifier's equivalent noise input was measured from approx. 0 to 174 kHz

Directed Self-Assembly of Poly(2-vinylpyridine)-b-polystyrene-b-poly(2-vinylpyridine) Triblock Copolymer with Sub-15 nm Spacing Line Patterns Using a Nanoimprinted Photoresist Template.

Science.gov (United States)

Sun, Zhiwei; Chen, Zhenbin; Zhang, Wenxu; Choi, Jaewon; Huang, Caili; Jeong, Gajin; Coughlin, E Bryan; Hsu, Yautzong; Yang, XiaoMin; Lee, Kim Y; Kuo, David S; Xiao, Shuaigang; Russell, Thomas P

2015-08-05

Low molecular weight P2VP-b-PS-b-P2VP triblock copolymer (poly(2-vinlypyridine)-block-polystyrene-block-poly(2-vinylpyridine)] is doped with copper chloride and microphase separated into lamellar line patterns with ultrahigh area density. Salt-doped P2VP-b-PS-b-P2VP triblock copolymer is self-assembled on the top of the nanoimprinted photoresist template, and metallic nanowires with long-range ordering are prepared with platinum-salt infiltration and plasma etching. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Free-electron laser system with Raman amplifier outcoupling

Energy Technology Data Exchange (ETDEWEB)

Linford, G.J.

1988-05-03

A free-electron laser system is described comprising: a free-electron laser pump beam generator producing a high-power optical output beam in a vacuum environement; a Raman amplifier cell located in the path of the output beam from the pump beam generator; means for generating and introducing a Stokes seed beam into the Raman amplifier cell, a pair of gaseous windows through which the output beam enters and leaves the Raman amplifier cell, each window having a stream of gas moving continuously in a direction generally perpendicular to the beam; and a mirror positioned in the path of the output beam from the Raman amplifier, the mirror functioning to reflect and further direct the output beam, but not the unwanted spectral components.

Modeling and design techniques for RF power amplifiers

CERN Document Server

Raghavan, Arvind; Laskar, Joy

2008-01-01

The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

Efficient trigger signal generation from wasted backward amplified stimulated emission at optical amplifiers for optical coherence tomography

Directory of Open Access Journals (Sweden)

Kim Seung Taek

2015-01-01

Full Text Available This paper propose an optical structure to generate trigger signals for optical coherence tomography (OCT using backward light which is usually disposed. The backward light is called backward amplified stimulated emission generated from semiconductor optical amplifier (SOA when using swept wavelength tunable laser (SWTL. A circulator is applied to block undesirable lights in the SWTL instead of an isolator in common SWTL. The circulator also diverts backward amplified spontaneous lights, which finally bring out trigger signals for a high speed digitizer. The spectra of the forward lights at SOA and the waveform of the backward lights were measured to check the procedure of the trigger formation in the experiment. The results showed that the trigger signals from the proposed SWTL with the circulator was quite usable in OCT.

Amplifying genetic logic gates.

Science.gov (United States)

Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

2013-05-03

Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

SPS RF System Amplifier plant

CERN Multimedia

1977-01-01

The picture shows a 2 MW, 200 MHz amplifier plant with feeder lines. The main RF-system of the SPS comprises four cavities: two of 20 m length and two of 16.5 m length. They are all installed in one long straight section (LSS 3). These cavities are of the travelling-wave type operating at a centre frequency of 200.2 MHz. They are wideband, filling time about 700 ns and untuned. The power amplifiers, using tetrodes are installed in a surface building 200 m from the cavities. Initially only two cavities were installed, a third cavity was installed in 1978 and a forth one in 1979. The number of power amplifiers was also increased: to the first 2 MW plant a second 2 MW plant was added and by end 1979 there were 8 500 kW units combined in pairs to feed each of the 4 cavities with up to about 1 MW RF power, resulting in a total accelerating voltage of about 8 MV. See also 7412016X, 7412017X, 7411048X.

Wideband pulse amplifiers for the NECTAr chip

International Nuclear Information System (INIS)

Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J-F.; Naumann, C.L.; Nayman, P.; Ribó, M.

2012-01-01

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1–3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

Wideband pulse amplifiers for the NECTAr chip

Science.gov (United States)

Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribó, M.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

2012-12-01

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

High-power piezo drive amplifier for large stack and PFC applications

Science.gov (United States)

Clingman, Dan J.; Gamble, Mike

2001-08-01

This paper describes the continuing development of Boeing High Power Piezo Drive Amplifiers. Described is the development and testing of a 1500 Vpp, 8 amp switching amplifier. This amplifier is used to drive a piezo stack driven rotor blade trailing edge flap on a full size helicopter. Also discuss is a switching amplifier designed to drive a Piezo Fiber Composite (PFC) active twist rotor blade. This amplifier was designed to drive the PFC material at 2000 Vpp and 0.5 amps. These amplifiers recycle reactive energy, allowing for a power and weight efficient amplifier design. This work was done in conjunction with the DARPA sponsored Phase II Smart Rotor Blade program and the NASA Langley Research Center sponsored Active Twist Rotor (ATR) blade program.

Traveling-Wave Tube Amplifier for THz Frequencies

DEFF Research Database (Denmark)

Kotiranta, Mikko; Krozer, Viktor; Zhurbenko, Vitaliy

tubes and gas lasers, but the ones available are too expensive or large for many applications. This work is related to the European project OPTHER (Optically driven terahertz amplifiers) which aims to realise a compact, powerful and efficient vacuum tube amplifier for the frequency range of 0.3 – 2...

Introduction to RF power amplifier design and simulation

CERN Document Server

Eroglu, Abdullah

2015-01-01

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

Resistor-less charge sensitive amplifier for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

2016-11-01

A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

SU-8 photoresist and SU-8 based nanocomposites for broadband acoustical matching at 1 GHz

Energy Technology Data Exchange (ETDEWEB)

Ndieguene, A; Campistron, P; Carlier, J; Wang, S; Callens-Debavelaere, D; Nongaillard, B, E-mail: Assane.Ndieguene@meletu.univ-valenciennes.f [Univ Lille Nord de France, F-59000 Lille (France)

2009-11-01

So as to integrate acoustic functions in BioMEMS using 1 GHz ZnO transducers deposited on silicon substrates, acoustic waves propagation through the silicon substrate and its transmission in water needs to be maximized (the insertion losses at the Si / water interface are about 6dB). In the context of integration, it is interesting for mechanical impedance matching to use photosensitive materials such as SU-8 so that patterns may be obtained. Nanocomposite materials based on SU-8 mixed with nanoparticles having adequate impedances were fabricated. These new materials are characterized in terms of their acoustic velocity, impedance and attenuation. For this, the nanocomposite layers are deposited on the substrate by spin coating to obtain a thickness of about 10 {mu}m, in order to separate acoustic echoes from the material (even if {lambda}/4 layer thickness is lower than 1 {mu}m). The insertion losses of the device immersed in water can be simulated as a function of frequency for a given reflection coefficient between the silicon substrate and the photoresist. The characteristics of some nanocomposites made with SU-8 and various concentrations of nanoparticles like Ti0{sub 2}, SrTiO{sub 3} or W have been determined.

Gyrocon: a deflection-modulated, high-power microwave amplifier

International Nuclear Information System (INIS)

Tallerico, P.J.

1977-10-01

A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

External Peltier Cooler For Low-Noise Amplifier

Science.gov (United States)

Soper, Terry A.

1990-01-01

Inexpensive Peltier-effect cooling module made of few commercially available parts used to reduce thermal noise in microwave amplifier. Retrofitted to almost any microwave low-noise amplifier or receiver preamplifier used in communication, telemetry, or radar. Includes copper or aluminum cold plate held tightly against unit to be cooled by strap-type worm-gear clamps.

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

Directory of Open Access Journals (Sweden)

P. Heydari

2014-10-01

Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

Conversion of the random amplified polymorphic DNA (RAPD ...

African Journals Online (AJOL)

Conversion of the random amplified polymorphic DNA (RAPD) marker UBC#116 linked to Fusarium crown and root rot resistance gene (Frl) into a co-dominant sequence characterized amplified region (SCAR) marker for marker-assisted selection of tomato.

Efficiency Optimization in Class-D Audio Amplifiers

DEFF Research Database (Denmark)

Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

2015-01-01

This paper presents a new power efficiency optimization routine for designing Class-D audio amplifiers. The proposed optimization procedure finds design parameters for the power stage and the output filter, and the optimum switching frequency such that the weighted power losses are minimized under...... the given constraints. The optimization routine is applied to minimize the power losses in a 130 W class-D audio amplifier based on consumer behavior investigations, where the amplifier operates at idle and low power levels most of the time. Experimental results demonstrate that the optimization method can...... lead to around 30 % of efficiency improvement at 1.3 W output power without significant effects on both audio performance and the efficiency at high power levels....

Wideband pulse amplifiers for the NECTAr chip

Energy Technology Data Exchange (ETDEWEB)

Sanuy, A., E-mail: asanuy@ecm.ub.es [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Delagnes, E. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Gascon, D. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Sieiro, X. [Departament d' Electronica, Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Bolmont, J.; Corona, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Feinstein, F. [LUPM, Universite Montpellier II and IN2P3/CNRS, CC072, bat. 13, place Eugene Bataillon, 34095 Montpellier (France); Glicenstein, J-F. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Naumann, C.L.; Nayman, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Ribo, M. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); and others

2012-12-11

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

DEFF Research Database (Denmark)

Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

2003-01-01

The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

Noise and saturation properties of semiconductor quantum dot optical amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

Manhattan equation for the operational amplifier

OpenAIRE

Mishonov, Todor M.; Danchev, Victor I.; Petkov, Emil G.; Gourev, Vassil N.; Dimitrova, Iglika M.; Varonov, Albert M.

2018-01-01

A differential equation relating the voltage at the output of an operational amplifier $U_0$ and the difference between the input voltages ($U_{+}$ and $U_{-}$) has been derived. The crossover frequency $f_0$ is a parameter in this operational amplifier master equation. The formulas derived as a consequence of this equation find applications in thousands of specifications for electronic devices but as far as we know, the equation has never been published. Actually, the master equation of oper...

Integrated circuit amplifiers for multi-electrode intracortical recording.

Science.gov (United States)

Jochum, Thomas; Denison, Timothy; Wolf, Patrick

2009-02-01

Significant progress has been made in systems that interpret the electrical signals of the brain in order to control an actuator. One version of these systems senses neuronal extracellular action potentials with an array of up to 100 miniature probes inserted into the cortex. The impedance of each probe is high, so environmental electrical noise is readily coupled to the neuronal signal. To minimize this noise, an amplifier is placed close to each probe. Thus, the need has arisen for many amplifiers to be placed near the cortex. Commercially available integrated circuits do not satisfy the area, power and noise requirements of this application, so researchers have designed custom integrated-circuit amplifiers. This paper presents a comprehensive survey of the neural amplifiers described in publications prior to 2008. Methods to achieve high input impedance, low noise and a large time-constant high-pass filter are reviewed. A tutorial on the biological, electrochemical, mechanical and electromagnetic phenomena that influence amplifier design is provided. Areas for additional research, including sub-nanoampere electrolysis and chronic cortical heating, are discussed. Unresolved design concerns, including teraohm circuitry, electrical overstress and component failure, are identified.

Series-Tuned High Efficiency RF-Power Amplifiers

DEFF Research Database (Denmark)

Vidkjær, Jens

2008-01-01

An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

Functional Blocks and Biquadratic ARC Filters using Transimpedance Amplifiers

Directory of Open Access Journals (Sweden)

R. Sarman

1997-04-01

Full Text Available The aims of the article are design and analysis of modern circuits including high performance functional blocks and biquadratic filters using transimpedance amplifiers. Here are given various types of these circuits, that works in classical voltage, current or hybrid mode. In this paper are also compared various possibilities of connection of single amplifier filters as for reduction of influence of transimpedance amplifier parasitic elements.

Functional Blocks and Biquadratic ARC Filters using Transimpedance Amplifiers

OpenAIRE

R. Sarman; R. Prokop; T. Dostal

1997-01-01

The aims of the article are design and analysis of modern circuits including high performance functional blocks and biquadratic filters using transimpedance amplifiers. Here are given various types of these circuits, that works in classical voltage, current or hybrid mode. In this paper are also compared various possibilities of connection of single amplifier filters as for reduction of influence of transimpedance amplifier parasitic elements.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

Criterion of transverse coherence of self-amplified spontaneous emission in high gain free electron laser amplifiers

International Nuclear Information System (INIS)

Xie, M.; Kim, K.J.

1995-01-01

In a high gain free electron laser amplifier based on Self-Amplified Spontaneous Emission (SASE) the spontaneous radiation generated by an electron beam near the undulator entrance is amplified many orders of magnitude along the undulator. The transverse coherence properties of the amplified radiation depends on both the amplification process and the coherence of the seed radiation (the undulator radiation generated in the first gain length or so). The evolution of the transverse coherence in the amplification process is studied based on the solution of the coupled Maxwell-Vlasov equations including higher order transverse modes. The coherence of the seed radiation is determined by the number of coherent modes in the phase space area of the undulator radiation. We discuss the criterion of transverse coherence and identify governing parameters over a broad range of parameters. In particular we re-examine the well known emittance criterion for the undulator radiation, which states that full transverse coherence is guaranteed if the rms emittance is smaller than the wavelength divided by 4π. It is found that this criterion is modified for SASE because of the different optimization conditions required for the electron beam. Our analysis is a generalization of the previous study by Yu and Krinsky for the case of vanishing emittance with parallel electron beam. Understanding the transverse coherence of SASE is important for the X-ray free electron laser projects now under consideration at SLAC and DESY

Self-amplifying mRNA vaccines.

Science.gov (United States)

Brito, Luis A; Kommareddy, Sushma; Maione, Domenico; Uematsu, Yasushi; Giovani, Cinzia; Berlanda Scorza, Francesco; Otten, Gillis R; Yu, Dong; Mandl, Christian W; Mason, Peter W; Dormitzer, Philip R; Ulmer, Jeffrey B; Geall, Andrew J

2015-01-01

This chapter provides a brief introduction to nucleic acid-based vaccines and recent research in developing self-amplifying mRNA vaccines. These vaccines promise the flexibility of plasmid DNA vaccines with enhanced immunogenicity and safety. The key to realizing the full potential of these vaccines is efficient delivery of nucleic acid to the cytoplasm of a cell, where it can amplify and express the encoded antigenic protein. The hydrophilicity and strong net negative charge of RNA impedes cellular uptake. To overcome this limitation, electrostatic complexation with cationic lipids or polymers and physical delivery using electroporation or ballistic particles to improve cellular uptake has been evaluated. This chapter highlights the rapid progress made in using nonviral delivery systems for RNA-based vaccines. Initial preclinical testing of self-amplifying mRNA vaccines has shown nonviral delivery to be capable of producing potent and robust innate and adaptive immune responses in small animals and nonhuman primates. Historically, the prospect of developing mRNA vaccines was uncertain due to concerns of mRNA instability and the feasibility of large-scale manufacturing. Today, these issues are no longer perceived as barriers in the widespread implementation of the technology. Currently, nonamplifying mRNA vaccines are under investigation in human clinical trials and can be produced at a sufficient quantity and quality to meet regulatory requirements. If the encouraging preclinical data with self-amplifying mRNA vaccines are matched by equivalently positive immunogenicity, potency, and tolerability in human trials, this platform could establish nucleic acid vaccines as a versatile new tool for human immunization. Copyright © 2015 Elsevier Inc. All rights reserved.

Cascade energy amplifier

International Nuclear Information System (INIS)

Barzilov, A.P.; Gulevich, A.V.; Kukharchuk, O.F.

2000-01-01

The technical problem of long-life fission product and minor actinide incineration and production of plutonium fuel in the prospective nuclear systems will arise at significant scales of nuclear power industry development. Subcritical nuclear reactors driven by extemal neutron sources (energy amplifiers) are considered as incinerators of toxicity of complete nuclear industry. In the frames of this concept, the subcritical reactor part consisting of two coupled blanket regions (inner fast neutron spectrum core and outer thermal core) driven by extemal neutron source is discussed. Two types of source are studied: spallation target and 14-MeV fusion bum of micropellets. Liquid metal Pb-Bi is considered as target material and coolant of inner fast core. Thermal core is a heavy-water subcritical reactor of the Candu-type. The fast core is protected from thermal neutrons influence with the boron shield. All reactor technologies used in this concept are tested during years of operation and commercially available. Thus, the cascade energy amplifiers have a set of advantages in comparison with traditional concepts: in energy production, in transmutation efficiency, and in economics. (authors)

Power neodymium-glass amplifier of a repetitively pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I [Russian Federal Nuclear Center ' All-Russian Research Institute of Experimental Physics' , Sarov, Nizhnii Novgorod region (Russian Federation)

2011-11-30

A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 Multiplication-Sign 25 mm and a {approx}40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 {mu}s. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass {approx}3.2, the linear gain {approx}0.031 cm{sup -1} with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm{sup -3}. The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4{lambda} ({lambda} = 0.63 {mu}m is the probing radiation wavelength).

Power neodymium-glass amplifier of a repetitively pulsed laser

International Nuclear Information System (INIS)

Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I

2011-01-01

A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 × 25 mm and a ∼40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 μs. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass ∼3.2, the linear gain ∼0.031 cm -1 with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm -3 . The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4λ (λ = 0.63 μm is the probing radiation wavelength).

GAME EDUKASI PERAKITAN AMPLIFIER BERBASIS ANDROID UNTUK USER UMUM

Directory of Open Access Journals (Sweden)

Fundhi Fanju Hafili

2015-04-01

Full Text Available ABSTRAK Seiring dengan perkembangan dan kebutuhan teknologi saat ini pembelajaran elektro dapat dibuat menjadi lebih praktis dan menarik di ponsel berbasis android Mempelajari elektronika juga memerlukan usaha-usaha nyata yang ber-kesinambungan dan mengarah kepada tumbuhnya kesadaran untuk menjadikan elektronika sebagai perkembangan teknologi. Dengan adanya metode game, merupakan salah satu metode belajar merakit amplifier yang disusun secara praktis dan sistematis sehingga memudahkan setiap orang untuk belajar maupun mengajarkan merancang amplifier. Sementara itu metode pembelajaran yang ada saat ini yaitu melalui buku maupun dengan cara bertatap muka langsung dengan tentor dirasa masih kurang efektif. Untuk mengatasi masalah tersebut maka penulis membuat game edukasi elektro merancang amplifier, karena mudah dipahami dan memudahkan para calon teknisi elektro dalam belajar merancang amplifier. Perancangan ini dilakukan dengan pendekatan metode Research and Development adalah metode penelitian yang digunakan untuk menghasilkan produk tertentu dan menguji keefektifan produk tersebut. Dengan aplikasi ini diharapkan dapat membantu para pengguna yang ingin belajar merakit amplifier berbasis android. . Kata kunci: elektro, game, research and development.

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Science.gov (United States)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Bevalac injector final stage RF amplifier upgrades

International Nuclear Information System (INIS)

Howard, D.; Calvert, J.; Dwinell, R.; Lax, J.; Lindner, A.; Richter, R.; Ridgeway, W.

1991-01-01

With the assistance of the DOE In-house Energy Management Program, the Bevalac injector final stage RF amplifier systems have been successfully upgraded to reduce energy consumption and operating costs. This recently completed project removed the energy-inefficient plate voltage modulator circuits that were used in conjunction with the final stage RF amplifiers. Construction, design, and operating parameters are described in detail

Effects of entanglement in an ideal optical amplifier

Science.gov (United States)

Franson, J. D.; Brewster, R. A.

2018-04-01

In an ideal linear amplifier, the output signal is linearly related to the input signal with an additive noise that is independent of the input. The decoherence of a quantum-mechanical state as a result of optical amplification is usually assumed to be due to the addition of quantum noise. Here we show that entanglement between the input signal and the amplifying medium can produce an exponentially-large amount of decoherence in an ideal optical amplifier even when the gain is arbitrarily close to unity and the added noise is negligible. These effects occur for macroscopic superposition states, where even a small amount of gain can leave a significant amount of which-path information in the environment. Our results show that the usual input/output relation of a linear amplifier does not provide a complete description of the output state when post-selection is used.

Design of a high-gain laser diode-array pumped Nd:YAG Alternating Precessive Slab Amplifier (APS-Amplifier)

Science.gov (United States)

Coyle, D. Barry

1991-01-01

In the design of space qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

Design of a high-gain laser diode-array pumped Nd:YAG alternating precessive slab amplifier (APS amplifier)

Science.gov (United States)

Coyle, D. B.

1991-01-01

In the design of space-qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

A CMOS Integrating Amplifier for the PHENIX Ring Imaging Cherenkov detector

International Nuclear Information System (INIS)

Wintenberg, A.L.; Jones, J.P. Jr.; Young, G.R.; Moscone, C.G.

1997-11-01

A CMOS integrating amplifier has been developed for use in the PHENIX Ring Imaging Cherenkov (RICH) detector. The amplifier, consisting of a charge-integrating amplifier followed by a variable gain amplifier (VGA), is an element of a photon measurement system comprising a photomultiplier tube, a wideband, gain of 10 amplifier, the integrating amplifier, and an analog memory followed by an ADC and double correlated sampling implemented in software. The integrating amplifier is designed for a nominal full scale input of 160 pC with a gain of 20 mV/pC and a dynamic range of 1000:1. The VGA is used for equalizing gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5 bits digital control, and the risetime is held to approximately 20 ns using switched compensation in the VGA. Details of the design and results from several prototype devices fabricated in 1.2 microm Orbit CMOS are presented. A complete noise analysis of the integrating amplifier and the correlated sampling process is included as well as a comparison of calculated, simulated and measured results

A CMOS Integrating Amplifier for the PHENIX Ring Imaging Cherenkov detector

Energy Technology Data Exchange (ETDEWEB)

Wintenberg, A.L.; Jones, J.P. Jr.; Young, G.R. [Oak Ridge National Lab., TN (United States); Moscone, C.G. [Tennessee Univ., Knoxville, TN (United States)

1997-11-01

A CMOS integrating amplifier has been developed for use in the PHENIX Ring Imaging Cherenkov (RICH) detector. The amplifier, consisting of a charge-integrating amplifier followed by a variable gain amplifier (VGA), is an element of a photon measurement system comprising a photomultiplier tube, a wideband, gain of 10 amplifier, the integrating amplifier, and an analog memory followed by an ADC and double correlated sampling implemented in software. The integrating amplifier is designed for a nominal full scale input of 160 pC with a gain of 20 mV/pC and a dynamic range of 1000:1. The VGA is used for equalizing gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5 bits digital control, and the risetime is held to approximately 20 ns using switched compensation in the VGA. Details of the design and results from several prototype devices fabricated in 1.2 {micro}m Orbit CMOS are presented. A complete noise analysis of the integrating amplifier and the correlated sampling process is included as well as a comparison of calculated, simulated and measured results.

Amplified spontaneous emission in solar-pumped iodine laser

Science.gov (United States)

Cho, Yong S.; Hwang, In H.; Han, Kwang S.; Lee, Ja H.

1992-01-01

The amplified spontaneous emission (ASE) from a long pulse, solar-simulating radiation pumped iodine laser amplifier is studied. The ASE threshold pump intensity is almost proportional to the inverse of the laser gain length when the gas pressure is constant in the laser tube.

Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

DEFF Research Database (Denmark)

Poel, Mike van der; Hvam, Jørn Märcher

2007-01-01

We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

Self-oscillating modulators for direct energy conversion audio power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating modulators can be used with the direct switching-mode audio power amplifier to improve its performance by providing fast hysteretic control with high power supply rejection ratio, open-loop stability and high bandwidth. Its operation is thoroughly analyzed and simulated waveforms of a prototype amplifier are presented. (au)

Design and development of digital seismic amplifier recorder

Energy Technology Data Exchange (ETDEWEB)

Samsidar, Siti Alaa; Afuar, Waldy; Handayani, Gunawan, E-mail: gunawanhandayani@gmail.com [Department of Physics, ITB (Indonesia)

2015-04-16

A digital seismic recording is a recording technique of seismic data in digital systems. This method is more convenient because it is more accurate than other methods of seismic recorders. To improve the quality of the results of seismic measurements, the signal needs to be amplified to obtain better subsurface images. The purpose of this study is to improve the accuracy of measurement by amplifying the input signal. We use seismic sensors/geophones with a frequency of 4.5 Hz. The signal is amplified by means of 12 units of non-inverting amplifier. The non-inverting amplifier using IC 741 with the resistor values 1KΩ and 1MΩ. The amplification results were 1,000 times. The results of signal amplification converted into digital by using the Analog Digital Converter (ADC). Quantitative analysis in this study was performed using the software Lab VIEW 8.6. The Lab VIEW 8.6 program was used to control the ADC. The results of qualitative analysis showed that the seismic conditioning can produce a large output, so that the data obtained is better than conventional data. This application can be used for geophysical methods that have low input voltage such as microtremor application.

Operational amplifier circuits analysis and design

CERN Document Server

Nelson, J C C

1995-01-01

This book, a revised and updated version of the author's Basic Operational Amplifiers (Butterworths 1986), enables the non-specialist to make effective use of readily available integrated circuit operational amplifiers for a range of applications, including instrumentation, signal generation and processing.It is assumed the reader has a background in the basic techniques of circuit analysis, particularly the use of j notation for reactive circuits, with a corresponding level of mathematical ability. The underlying theory is explained with sufficient but not excessive, detail. A range of compu

Spaceflight 2 um Tm Fiber MOPA Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Fibertek proposes to design, develop, and test a spaceflight prototype 2051 nm thulium (Tm)-doped fiber amplifier (TDFA) optical master oscillator power amplifier...

Compact solid state radio frequency amplifiers in kW regime for ...

Indian Academy of Sciences (India)

RF amplifier; solid state amplifier; power combiner and divider; .... was designed using planar and coaxial transmission line baluns with minimum lumped variable ..... Cripps S C 1999 RF power amplifiers for wireless communication. Norwood: ...

Distributed amplifier using Josephson vortex flow transistors

International Nuclear Information System (INIS)

McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

1986-01-01

A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer

DEFF Research Database (Denmark)

Narendra, K.; Limiti, E.; Paoloni, C.

2013-01-01

A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology. The impedance transformer employs asymmetric coupled lines and transforms a low output impedance of the amplifier to a standard 50 Ω...

Development and energization of IOT based RF amplifier

International Nuclear Information System (INIS)

Mandal, A.; Som, S.; Raj, P.R.; Manna, S.K.; Ghosh, S.; Seth, S.; Thakurta, S.; Thakur, S.K.; Saha, S.; Panda, U.S.

2013-01-01

A 704 MHz IOT based CW RF amplifier has been developed in VECC. It can also be used with proper tuning to power cavity modules operating at 650 MHz in high energy high intensity proton linear accelerator proposed to be built for ADSS/SNS programme in India and Project-X at Fermilab, USA. This IOT based amplifier provides up to 60 kW continuous wave RF power at 700 MHz. It required various power supplies, LCW cooling and forced air cooling for its operation. The auxiliary power supplies like Grid, Filament and Ion-pump, are floated and mounted on an isolated frame, i.e., HV deck. The mains inputs are electrically isolated by means of isolation transformer. Also, a Programmable Logic Controller (PLC) based interlocks along with high voltage collector power supply has been designed and developed for the safe operation of the RF amplifier. This paper discusses about various developments and energization of the IOT based RF amplifier with high power dummy load. (author)

Amplifiers dedicated for large area SiC photodiodes

Science.gov (United States)

Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

2016-09-01

Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

Spatial chirp in Ti:sapphire multipass amplifier

International Nuclear Information System (INIS)

Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

2017-01-01

The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

An automated test facility for neutronic amplifiers

International Nuclear Information System (INIS)

Beattie, W.J.

1997-01-01

Neutronic amplifiers are used at the Chalk River Laboratory in applications such as neutron flux monitoring and reactor control systems. Routine preventive maintenance of control and safety systems included annual calibration and characterization of the neutronic amplifiers. An investigation into the traditional methods of annual routine maintenance of amplifiers concluded that frequency and phase response measurements in particular were labour intensive and subject to non-repeatable errors. A decision was made to upgrade testing methods and facilities by using programmable test equipment under the control of a computer. In order to verify the results of the routine measurements, expressions for the transfer functions were derived from the circuit diagrams. Frequency and phase responses were then calculated and plotted thus providing a bench-mark to which the test results can be compared. (author)

Dynamic range meter for radiofrequency amplifiers

Directory of Open Access Journals (Sweden)

Drozd S. S.

2009-04-01

Full Text Available The new measurement setup having increased on 20…30 dB the own dynamic range in comparison with the standard circuit of the dynamic range meter is offered and the rated value of an error bringing by setup in the worst case does not exceed ± 2,8 dB. The measurement setup can be applied also to determinate levels of intermodulation components average power amplifiers and powerful amplifiers of a low-frequency at replacement of the quartz filter on meeting low-frequency the LC-filter and the spectrum analyzer.

Cavity enhanced rephased amplified spontaneous emission

International Nuclear Information System (INIS)

A Williamson, Lewis; J Longdell, Jevon

2014-01-01

Amplified spontaneous emission is usually treated as an incoherent noise process. Recent theoretical and experimental work using rephasing optical pulses has shown that rephased amplified spontaneous emission (RASE) is a potential source of wide bandwidth time-delayed entanglement. Due to poor echo efficiency the plain RASE protocol does not in theory achieve perfect entanglement. Experiments done to date show a very small amount of entanglement at best. Here we show that RASE can, in principle, produce perfect multimode time-delayed two mode squeezing when the active medium is placed inside a Q-switched cavity. (paper)

Role of free radicals in radiation chemical aging

Energy Technology Data Exchange (ETDEWEB)

Greenstock, C L

1986-01-01

Ionizing radiation initiates chemical changes in DNA, phospholipid membranes and other critical cell targets, that, if allowed to accumulate unrepaired, may lead to aging and other chronic effects. The chemical effects are free radical mediated, the principal damaging species being radical OH and to a lesser extent O2-anion radical and the molecular product H/sub 2/O/sub 2/. Many compounds can act in combination with ionizing radiation, to amplify the potential oxidative stress. Chemicals, ultra-violet light, lipid peroxides and their breakdown products may increase the extent of acute and chronic radiobiological effects.

Surface modification of SU8 photoresist for shrinkage improvement in a monolithic MEMS microstructure

Science.gov (United States)

Chung, C. K.; Hong, Y. Z.

2007-02-01

The effect of O2 plasma treatment on the surface property of exposed and unexposed SU8 photoresist has been investigated for the fabrication of a monolithic MEMS microstructure. It can solve the non-uniformity problem of second resist coating on the SU8 with high intrinsic shrinkage after exposure and post-exposure baking (PEB) in the fabrication of the stacked polymer-metal or polymer-polymer structure, which was used in the application of microfluid, bio and chemistry. The thickness difference of untreated SU8 before PEB between the exposed and unexposed SU8 was about 0.3% while that after PEB increased to about 6%. It could result in large non-uniformity of about 18 µm thickness difference for the following second resist coating on the hydrophobic surface without plasma treatment. The surface property of SU8 in terms of the contact angle and surface energy can be adjusted by O2 plasma treatment for enhancing the coating uniformity of the following resist. The measured contact angles of the exposed and unexposed SU8 decrease with O2 plasma time, corresponding to the increased surface energy determined by the Lifshitz-van der Waals/Lewis acid-base approach. It displayed that the similar hydrophilic surface property can minimize the thickness difference of second resist coating on the first shrunken SU8. A monolithic nozzle plate with a physical resolution of 600 dpi in a single column was demonstrated for an inkjet application based on the improved uniformity.

Pulse GaAs field transistor amplifier with subnanosecond time transient

International Nuclear Information System (INIS)

Sidnev, A.N.

1987-01-01

Pulse amplifier on fast field effect GaAs transistors with Schottky barrier is described. The amplifier contains four cascades, the first three of which are made on combined transistors on the common-drain circuit. The last cascade is made on high-power field effect GaAs transistor for coordination with 50 ohm load. The amplifier operates within the range of input signals from 0.5 up to 100 mV with repetition frequency up to 16 Hz, The gain of the amplifier is ≅ 20 dB. The setting time at output pulses amplitude up to 1 V constitutes ∼ 0.2 ns

TARC: Carlo Rubbia's Energy Amplifier

CERN Multimedia

Laurent Guiraud

1997-01-01

Transmutation by Adiabatic Resonance Crossing (TARC) is Carlo Rubbia's energy amplifier. This CERN experiment demonstrated that long-lived fission fragments, such as 99-TC, can be efficiently destroyed.

Designing and development of a synchronous analogic amplifier

International Nuclear Information System (INIS)

De la Hoz, E.; Ortiz, A.

1989-01-01

A large number of electronic systems used in the measurement and analysis of weak signals involve a ''lock-in'' amplifier, because it provides an effective method for the recovery of signals buried below a considerable high level of noise. The use of the ''lock-in'' amplifier in our institutions is very limited due to the high expense and the lack of warranties for its maintenance. The purpose of the present work is to design and build a low cost ''lock-in'' amplifier using components available in the local market. Its optimization has allowed us to increase the sensitivity and linearity of the systems, making it very versatile for dedicated applications

Directed Self-assembly of Block Copolymer with Sub-15 nm Domain Spacing Using Nanoimprinted Photoresist Templates

Science.gov (United States)

Sun, Zhiwei; Chen, Zhenbin; Zhang, Wenxu; Coughlin, E. Bryan; Xiao, Shuaigang; Russell, Thomas

There has been increasing interest in preparing block copolymer thin films with ultra-small domain spacings for use as etching masks for ultra-high resolution nanolithography. One method to prepare block copolymer materials with small feature sizes is salt doping, increasing the Flory-Huggins interaction and allowing microphase separation to be maintained at lower molecular weights. Lamellae-forming P2VP- b-PS- b-P2VP block copolymer with various molecular weight was synthesized using RAFT polymerization with a dual functional chain transfer agent. Copper (II) Chloride or Gold (III) chloride was found to be selectively associated with P2VP block and increase the unfavorable interactions between PS and P2VP blocks, driving the disordered block copolymer into the ordered state. A 14 nm lamellar spacing of P2VP- b-PS- b-P2VP thin film was prepared using copper (II) Chloride doping after acetone vapor annealing on neutral brushes. Metallic nano-wire arrays were prepared after selective infiltration of platinum salt into the P2VP domain and oxygen plasma treatment. The directed self-assembly of salt doped P2VP- b-PS- b-P2VP triblock copolymer having long-rang lateral order on nanoimprinted photoresist templates with shallow trenches was also studied.

Development of amorphous silicon based EUV hardmasks through physical vapor deposition

Science.gov (United States)

De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

2017-10-01

Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

On the unlimited gain of a nonlinear parametric amplifier

DEFF Research Database (Denmark)

Sorokin, Vladislav

2014-01-01

The present paper is concerned with analysis of the response of a nonlinear parametric amplifier in abroad range of system parameters, particularly beyond resonance. Such analysis is of particular interestfor micro- and nanosystems, since many small-scale parametric amplifiers exhibit a distinctly...... nonlinearbehavior when amplitude of their response is sufficiently large. The modified method of direct separa-tion of motions is employed to study the considered system. As the result it is obtained that steady-stateamplitude of the nonlinear parametric amplifier response can reach large values in the case...... of arbitrarilysmall amplitude of external excitation, so that the amplifier gain tends to infinity. Very large amplifiergain can be achieved in a broad range of system parameters, in particular when the amplitude of para-metric excitation is comparatively small. The obtained results clearly demonstrate that very...

Rare-Earth Doped Photonic Crystal Fibre Lasers and Amplifiers

DEFF Research Database (Denmark)

Hougaard, Kristian G.

2005-01-01

In this thesis, a theoretical and numerical study of the use of rare-earthdoped photonic crystal fibres as optical amplifiers and lasers, has been performed. Photonic crystal fibres or microstructured optical fibres is a new kind of optical fibre in which the cladding region typically consist....... Their novel properties allow for design of optical fibre amplifiers and fibre lasers with superior performance, compared to solutions based on conventional fibres. The primary applications considered are high efficiency fibre amplifiers based on index guiding photonic crystal fibres, and cladding pumped....... The thesis also presents the basic properties of optical amplification, and describes the numerical model developed to model the behaviour of lasers and amplifiers based on photonic crystal fibres. The developed numerical tools are then used to investigate specific applications of photonic crystal fibres...

BET bromodomain inhibition of MYC-amplified medulloblastoma.

Science.gov (United States)

Bandopadhayay, Pratiti; Bergthold, Guillaume; Nguyen, Brian; Schubert, Simone; Gholamin, Sharareh; Tang, Yujie; Bolin, Sara; Schumacher, Steven E; Zeid, Rhamy; Masoud, Sabran; Yu, Furong; Vue, Nujsaubnusi; Gibson, William J; Paolella, Brenton R; Mitra, Siddhartha S; Cheshier, Samuel H; Qi, Jun; Liu, Kun-Wei; Wechsler-Reya, Robert; Weiss, William A; Swartling, Fredrik J; Kieran, Mark W; Bradner, James E; Beroukhim, Rameen; Cho, Yoon-Jae

2014-02-15

MYC-amplified medulloblastomas are highly lethal tumors. Bromodomain and extraterminal (BET) bromodomain inhibition has recently been shown to suppress MYC-associated transcriptional activity in other cancers. The compound JQ1 inhibits BET bromodomain-containing proteins, including BRD4. Here, we investigate BET bromodomain targeting for the treatment of MYC-amplified medulloblastoma. We evaluated the effects of genetic and pharmacologic inhibition of BET bromodomains on proliferation, cell cycle, and apoptosis in established and newly generated patient- and genetically engineered mouse model (GEMM)-derived medulloblastoma cell lines and xenografts that harbored amplifications of MYC or MYCN. We also assessed the effect of JQ1 on MYC expression and global MYC-associated transcriptional activity. We assessed the in vivo efficacy of JQ1 in orthotopic xenografts established in immunocompromised mice. Treatment of MYC-amplified medulloblastoma cells with JQ1 decreased cell viability associated with arrest at G1 and apoptosis. We observed downregulation of MYC expression and confirmed the inhibition of MYC-associated transcriptional targets. The exogenous expression of MYC from a retroviral promoter reduced the effect of JQ1 on cell viability, suggesting that attenuated levels of MYC contribute to the functional effects of JQ1. JQ1 significantly prolonged the survival of orthotopic xenograft models of MYC-amplified medulloblastoma (P < 0.001). Xenografts harvested from mice after five doses of JQ1 had reduced the expression of MYC mRNA and a reduced proliferative index. JQ1 suppresses MYC expression and MYC-associated transcriptional activity in medulloblastomas, resulting in an overall decrease in medulloblastoma cell viability. These preclinical findings highlight the promise of BET bromodomain inhibitors as novel agents for MYC-amplified medulloblastoma. ©2013 AACR

Investigation of switching frequency variations in self-oscillating class D amplifiers

OpenAIRE

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael A. E.

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in class D amplifiers is known as self-oscillation. An parameter of key interest in self-oscillating class D amplifiers is the switching frequency, which can be directly related to the performance of the amplifier. This paper will clearify the myth of the switching frequency through investigation of its dependency on modulation index and ...

Model of pulse extraction from a copper laser amplifier

International Nuclear Information System (INIS)

Boley, C.D.; Warner, B.E.

1997-03-01

A computational model of pulse propagation through a copper laser amplifier has been developed. The model contains a system of 1-D (in the axial direction), time-dependent equations for the laser intensity and amplified spontaneous emission (ASE), coupled to rate equations for the atomic levels. Detailed calculations are presented for a high-power amplifier at Lawrence Livermore National Laboratory. The extracted power agrees with experiment near saturation. At lower input power the calculation overestimates experiment, probably because of increased ASE effects. 6 refs., 6 figs

Efficient performance simulation of class D amplifier output stages

DEFF Research Database (Denmark)

Nyboe, Flemming; Risbo, Lars; Andreani, Pietro

2005-01-01

Straightforward simulation of amplifier distortion involves transient simulation of operation on a sine wave input signal, and a subsequent FFT of the output voltage. This approach is very slow on class D amplifiers, since the switching behavior forces simulation time steps that are many orders...... of magnitude smaller than the duration of one period of an audio sine wave. This work presents a method of simulating the amplifier transfer characteristic using a minimum amount of simulation time, and then deriving THD from the results....

Ripple compensation for a class-D amplifier

OpenAIRE

Cox, Stephen M.; du Toit Mouton, Hendrik

2015-01-01

This paper presents the first detailed mathematical analysis of the ripple compensation technique for reducing audio distortion in a class-D amplifier with negative feedback. The amplifier converts a relatively low-frequency audio signal to a high-frequency train of rectangular pulses whose widths are slowly modulated according to the audio signal (pulse-width modulation, PWM). Distortion manifests itself through unwanted audio-frequency harmonics that arise in the output due to nonlinearitie...

Progress on the gyrocon deflection-modulated amplifier

International Nuclear Information System (INIS)

Tallerico, P.J.

1982-01-01

The gyrocon is a high-power deflection-modulated amplifier that can have excellent spatial bunching and, hence, high dc-to-rf conversion efficiency. A program to design and build a prototype amplifier at 450 MHz is discussed. Peak powers of 150 kW and conversion efficiencies of 23% have been measured; the testing program is being pursued to improve this performance. Some possible mechanisms for the difference between the experimental and calculated performance are discussed

A high-power compact regenerative amplifier FEL

International Nuclear Information System (INIS)

Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

1997-01-01

The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

Radiation hardening techniques for rare-earth based optical fibers and amplifiers

International Nuclear Information System (INIS)

Girard, Sylvain; Marcandella, Claude; Vivona, Marilena; Prudenzano, Luciano Mescia F.; Laurent, Arnaud; Robin, Thierry; Cadier, Benoit; Pinsard, Emmanuel; Ouerdane, Youcef; Boukenter, Aziz; Cannas, Marco; Boscaino, Roberto

2012-01-01

Er/Yb doped fibers and amplifiers have been shown to be very radiation sensitive, limiting their integration in space. We present an approach including successive hardening techniques to enhance their radiation tolerance. The efficiency of our approach is demonstrated by comparing the radiation responses of optical amplifiers made with same lengths of different rare-earth doped fibers and exposed to gamma-rays. Previous studies indicated that such amplifiers suffered significant degradation for doses exceeding 10 krad. Applying our techniques significantly enhances the amplifier radiation resistance, resulting in a very limited degradation up to 50 krad. Our optimization techniques concern the fiber composition, some possible pre-treatments and the interest of simulation tools used to harden by design the amplifiers. We showed that adding cerium inside the fiber phospho-silicate-based core strongly decreases the fiber radiation sensitivity compared to the standard fiber. For both fibers, a pre-treatment with hydrogen permits to enhance again the fiber resistance. Furthermore, simulations tools can also be used to improve the tolerance of the fiber amplifier by helping identifying the best amplifier configuration for operation in the radiative environment. (authors)

Effects of gamma radiation on commercial operational amplifiers

International Nuclear Information System (INIS)

Claro, Luiz H.; Santos, Jose A. dos

2009-01-01

The operational amplifiers are widely used in nuclear instrumentation. Their applications span the signal conditioning circuits, analog instrumentation, amplifiers, converters, oscillators and others. If an operational amplifier is used to work in a radiation environment, the device suffers degradation in its performance leading to the bad work in the systems. Some of these devices are designed as rad-hard components and therefore the effects of radiation damage are minimized, however its main disadvantage is the high cost and difficult to find in the market. As an alternative one can use the conventional electronic components available in the market and named COTS (Commercially Available Off-The-Shelf) but they must be tested under a radiation environment. In this work the effect of the radiation damage is studied in two typical operational amplifiers. Some electric parameters of these devices were measured for different gamma radiation doses and they were working at different input signal frequencies. A 60 Co isotopic radiation source was used and the results show that there is a certain degradation of the device depending on the radiation absorbed dose. (author)

Bandwidth limitations in current mode and voltage mode integrated feedback amplifiers

DEFF Research Database (Denmark)

Bruun, Erik

1995-01-01

loop bandwidth remains constant for a feedback amplifier. The constant-bandwidth relations of such amplifier designs are reviewed in this paper and they are combined with the constraints imposed by technology when the feedback amplifier is to be designed in an integrated technology. From this analysis...

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

Electronically Tunable Transimpedance Instrumentation Amplifier Based on OTRA

Directory of Open Access Journals (Sweden)

Rajeshwari Pandey

2013-01-01

Full Text Available Operational transresistance amplifier (OTRA is the most suitable analog building block (ABB for transimpedance type signal processing due to its very nature of current input and voltage output. In this paper, OTRA-based transimpedance instrumentation amplifier (TIA is presented. It provides high differential gain and bandwidth, which is independent of gain. It also offers high common-mode rejection ratio (CMRR. The amplifier gain can be controlled electronically by implementing resistors using MOS transistors operating in linear region. The circuit can be made fully integrated. The proposed circuit is insensitive to parasitic input capacitances and input resistances due to the internally grounded input terminals of OTRA. Theoretical analysis is verified through PSPICE simulations and experimentation.

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

Science.gov (United States)

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-10-23

The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

Microwave amplifier and active circuit design using the real frequency technique

CERN Document Server

Jarry, Pierre

2016-01-01

This book focuses on the authors' Real Frequency Technique (RFT) and its application to a wide variety of multi-stage microwave amplifiers and active filters, and passive equalizers for radar pulse shaping and antenna return loss applications. The first two chapters review the fundamentals of microwave amplifier design and provide a description of the RFT. Each subsequent chapter introduces a new type of amplifier or circuit design, reviews its design problems, and explains how the RFT can be adapted to solve these problems. The authors take a practical approach by summarizing the design steps and giving numerous examples of amplifier realizations and measured responses. Provides a complete description of the RFT as it is first used to design multistage lumped amplifiers using a progressive optimization of the equalizers, leading to a small umber of parameters to optimize simultaneously Presents modifications to the RFT to design trans-impedance microwave amplifiers that are used for photodiodes acti...

Investigation of switching frequency variations in self-oscillating class D amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in class D amplifiers is known as self-oscillation. An parameter of key interest in self-oscillating class D amplifiers is the switching fre...

Empirical multichannel power consumption model for erbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza

2015-01-01

In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified simu......-users, it is relevant to study channel number dependent power consumption for devising EDFA power efficient control and design.......In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end...

Analysis and evaluation of the power amplifier device

Energy Technology Data Exchange (ETDEWEB)

Kim, Y. K.; Ryu, J. W. [Kongju National University, Gongju (Korea, Republic of)

2011-11-15

We developed a master oscillator power amplifier (MOPA) type fiber amplifier for the separation of the Ca-48 isotope by using a fiber laser. The ytterbium (Yb)-doped end-capped rod-type photonic crystal fiber (PCF) was used as a gain medium of MOPA amplifier. The PCFs used in our experiments were a 56-cm and an 81-cm rod-type end-capped Yb-doped double-clad PM fibers 'DC-285/100-PM-Yb-Rod', with a 100-{mu}m core (NA 0.02) and a 285-{mu}m cladding (NA 0.6) fabricated by NKT Photonics. The mode field diameter (MFD) of the rod-type PCF was 75-{mu}m, and an absorption efficiency of 30 dB/m at 976 nm and a low NA 0.02 helped to sustain the excellent lasing beam quality. We obtained an output power of 112 W at a pump power of 380 W with a repetition rate of 150 kHz. The measured pulse width was 13 ns at 150 kHz, 1056 nm. The laser beam quality shows a single mode amplification characteristics with a beam quality factor values of M2 are 2 -3. The PCF launching efficiency reached a maximum value of 86.7% with an average efficiencies of above 80%. At a pump power of 250 W and seed power input of 4 W, the CW PCF amplifier was found to generate average output powers of 138 W, 110 W, and 82 W at 1056-nm, 1070-nm, and 1089-nm wavelengths, respectively. The amplified PCF output beam had a line width of 70 MHz full width at half maximum (FWHM). These PCF amplified beams had good beam qualities with M2values of less than 1.8 at all three wavelengths. The gain saturation seed input power in the 81-cm PCF was found to be {approx}6 W at 1056 nm. The temperature of the PCF core reached over 230 .deg. C at the pumping section of the PCF. The temperatures of the end-cap heads on both the pumping and the output end-cap sides were 81.4 .deg. C and 35.7 .deg. C, respectively. The PCF amplifier maintained good polarization mode characteristics with an average DOP of over 87%. The slight decrease in the DOP oat output powers over 170 W output power may have been caused by a

Development of microwave amplifier based on gallium nitride semiconductor structures

International Nuclear Information System (INIS)

Pavlov, D.Yi.; Prokopenko, O.V.; Tsvyirko, Yu.A.; Pavlov, Yi.L.

2014-01-01

Microwave properties of microwave amplifier based on gallium nitride (GN) semiconductor structures has been calculated numerically. We proposed the method of numerical calculation of device. This method is accurately sets the value of its characteristics depending on the elements that are used in design of amplifier. It is shown that the device based on GN HEMT-transistors could have amplification factor about 50 dB, while its sizes are 27x18x5.5 mm 3 . Also was provided the absolute stability an amplifier in the whole operating frequency range. It is quite important when using this type of amplifiers in different conditions of exploitation and various fields of use the radioelectronic equipment

Process development for waveguide chemical sensors with integrated polymeric sensitive layers

Science.gov (United States)

Amberkar, Raghu; Gao, Zhan; Park, Jongwon; Henthorn, David B.; Kim, Chang-Soo

2008-02-01

Due to the proper optical property and flexibility in the process development, an epoxy-based, high-aspect ratio photoresist SU-8 is now attracting attention in optical sensing applications. Manipulation of the surface properties of SU-8 waveguides is critical to attach functional films such as chemically-sensitive layers. We describe a new integration process to immobilize fluorescence molecules on SU-8 waveguide surface for application to intensity-based optical chemical sensors. We use two polymers for this application. Spin-on, hydrophobic, photopatternable silicone is a convenient material to contain fluorophore molecules and to pattern a photolithographically defined thin layer on the surface of SU-8. We use fumed silica powders as an additive to uniformly disperse the fluorophores in the silicone precursor. In general, additional processes are not critically required to promote the adhesion between the SU-8 and silicone. The other material is polyethylene glycol diacrylate (PEGDA). Recently we demonstrated a novel photografting method to modify the surface of SU-8 using a surface bound initiator to control its wettability. The activated surface is then coated with a monomer precursor solution. Polymerization follows when the sample is exposed to UV irradiation, resulting in a grafted PEGDA layer incorporating fluorophores within the hydrogel matrix. Since this method is based the UV-based photografting reaction, it is possible to grow off photolithographically defined hydrogel patterns on the waveguide structures. The resulting films will be viable integrated components in optical bioanalytical sensors. This is a promising technique for integrated chemical sensors both for planar type waveguide and vertical type waveguide chemical sensors.

New Packaging for Amplifier Slabs

Energy Technology Data Exchange (ETDEWEB)

Riley, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Thorsness, C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Suratwala, T. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Steele, R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Rogowski, G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2015-03-18

The following memo provides a discussion and detailed procedure for a new finished amplifier slab shipping and storage container. The new package is designed to maintain an environment of <5% RH to minimize weathering.

Directional amplifier in an optomechanical system with optical gain

Science.gov (United States)

Jiang, Cheng; Song, L. N.; Li, Yong

2018-05-01

Directional amplifiers are crucial nonreciprocal devices in both classical and quantum information processing. Here we propose a scheme for realizing a directional amplifier between optical and microwave fields based on an optomechanical system with optical gain, where an active optical cavity and two passive microwave cavities are coupled to a common mechanical resonator via radiation pressure. The two passive cavities are coupled via hopping interaction to facilitate the directional amplification between the active and passive cavities. We obtain the condition of achieving optical directional amplification and find that the direction of amplification can be controlled by the phase differences between the effective optomechanical couplings. The effects of the gain rate of the active cavity and the effective coupling strengths on the maximum gain of the amplifier are discussed. We show that the noise added to this amplifier can be greatly suppressed in the large cooperativity limit.

Deep UV light generation by a fiber/bulk hybrid amplifier at 199 nm

International Nuclear Information System (INIS)

Urata, Yoshiharu; Shinozaki, Tatsuya; Wada, Yoshio; Kaneda, Yushi; Wada, Satoshi; Imai, Shinichi

2009-01-01

A high-pulse-repetition-frequency (PRF) pulsed light source in the deep ultraviolet region has been realized by a multiple wavelength conversion technique using a hybrid fiber/bulk amplifier system. Output of 199 nm with a power of 50 mW was achieved at 2.4 MHz PRF. The 1 μm amplifier consisted of a Yb-doped fiber amplifier and a Nd-doped YVO4 amplifier. A 1.5 μm fiber master-oscillator power amplifier was employed as the other fundamental source. The amplifiers exhibited good amplification properties in pulse energy, polarization extinction ratio, and spectrum for nonlinear wavelength conversion

A high performance electrometer amplifier of hybrid design

International Nuclear Information System (INIS)

Rao, N.V.; Nazare, C.K.

1979-01-01

A high performance, reliable, electrometer amplifier of hybrid design for low current measurements in mass spectrometers has been developed. The short term instability with a 5 x 10 11 ohms input resistor is less than 1 x 10sup(-15) Amp. The drift is better than 1 mV/hour. The design steps are illustrated with a typical amplifier performance details. (auth.)

Embedded control system for high power RF amplifiers

International Nuclear Information System (INIS)

Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

2011-01-01

RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

A second-order class-D audio amplifier

OpenAIRE

Cox, Stephen M.; Tan, M.T.; Yu, J.

2011-01-01

Class-D audio amplifiers are particularly efficient, and this efficiency has led to their ubiquity in a wide range of modern electronic appliances. Their output takes the form of a high-frequency square wave whose duty cycle (ratio of on-time to off-time) is modulated at low frequency according to the audio signal. A mathematical model is developed here for a second-order class-D amplifier design (i.e., containing one second-order integrator) with negative feedback. We derive exact expression...

Modeling Distortion Effects in Class-D Amplifier Filter Inductors

DEFF Research Database (Denmark)

Knott, Arnold; Stegenborg-Andersen, Tore; Thomsen, Ole Cornelius

2010-01-01

Distortion is generally accepted as a quantifier to judge the quality of audio power amplifiers. In switchmode power amplifiers various mechanisms influence this performance measure. After giving an overview of those, this paper focuses on the particular effect of the nonlinearity of the output f...

Switching-mode Audio Power Amplifiers with Direct Energy Conversion

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

has been replaced with a high frequency AC link. When compared to the conventional Class D amplifiers with a separate DC power supply, the proposed single conversion stage amplifier provides simple and compact solution with better efficiency and higher level of integration, leading to reduced...

Properties and structure of high erbium doped phosphate glass for short optical fibers amplifiers

International Nuclear Information System (INIS)

Seneschal, Karine; Smektala, Frederic; Bureau, Bruno; Floch, Marie Le; Jiang Shibin; Luo, Tao; Lucas, Jacques; Peyghambarian, Nasser

2005-01-01

New phosphate glasses have been developed in order to incorporate high rare-earth ions concentrations. These glasses present a great chemical stability and a high optical quality. The phosphate glass network is open, very flexible, with a linkage of the tetrahedrons very disordered and contains a larger number of non-bridging oxygens (66%). The great stability and resistance against crystallization associated with the possibility to incorporate high doping concentration of rare-earth ions in these phosphate glasses make them very good candidates for the realization of ultra short single mode amplifiers with a high gain at 1.55 μm

Amplifying mirrors with saturated gain without and with a resonator

DEFF Research Database (Denmark)

Skettrup, Torben

2007-01-01

An investigation of amplifying mirrors with a view to their use in resonator structures has been performed. Both non-saturated and saturated amplifying mirrors are demonstrated. It was found that relatively high values of gain (typical 5-10 times) can be obtained even when saturation is taken...... into account. Several resonator structures containing from two up to four mirrors, some including beamsplitters, are investigated. It was found that the gain to a first approximation depends only on the ratio between the pumping power and the input power on the amplifying mirror. It was also found...... that the configuration with four mirrors is well suited as an amplifier device working as an optical transistor since high values of gain up to 40 times could be obtained....

Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

International Nuclear Information System (INIS)

Khan, T.K.; Tamboli, P.K.; Antony, J.; Balasubramanian, R.; Agilandaeswari, K.; Pramanik, M.

2010-01-01

This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

Science.gov (United States)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

C.A.D for broad-band multistage microwave transimpedance amplifier.

OpenAIRE

Olomo Ngongo, A.; Perennec, A.; Soares, R.; Jarry, P.

1992-01-01

In high data rate optical-fiber, it is necessary to employ an ultra broad-band transimpedance amplifier. In this paper, we present a technique for the design of a transimpedance amplifiers. It can be applied as well to the design of interstage equalizers for microwave transimpedance amplifiers. In the version described in this paper, the optimisation process is applied to the transimpedance gain and noise which is adjusted. Based on the load charge matching technique, a sequential procedure t...

Efficiency of random amplified polymorphic DNA (RAPD) and inter ...

African Journals Online (AJOL)

Efficiency of random amplified polymorphic DNA (RAPD) and inter-simple sequence repeats (ISSR) markers for genotype fingerprinting and genetic diversity studies in canola ( ) ... The number of amplified fragments with RAPD primers ranged from 8 to 21, with the size of amplicons ranging from 162 to 3154 bp.

Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

Science.gov (United States)

2017-03-01

QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

Nuclear magnetic resonance experiments with dc SQUID amplifiers

International Nuclear Information System (INIS)

Heaney, M.B.

1990-11-01

The development and fabrication of dc SQUIDs (Superconducting QUantum Interference Devices) with Nb/Al 2 O 3 /Nb Josephson junctions is described. A theory of the dc SQUID as a radio-frequency amplifier is presented, with an optimization strategy that accounts for the loading and noise contributions of the postamplifier and maximizes the signal-to-noise ratio of the total system. The high sensitivity of the dc SQUID is extended to high field NMR. A dc SQUID is used as a tuned radio-frequency amplifier to detect pulsed nuclear magnetic resonance at 32 MHz from a metal film in a 3.5 Tesla static field. A total system noise temperature of 11 K has been achieved, at a bath temperature of 4.2 K. The minimum number of nuclear Bohr magnetons observable from a free precession signal after a single pulse is about 2 x 10 17 in a bandwidth of 25 kHz. In a separate experiment, a dc SQUID is used as a rf amplifier in a NQR experiment to observe a new resonance response mechanism. The net electric polarization of a NaClO 3 crystal due to the precessing electric quadrupole moments of the Cl nuclei is detected at 30 MHz. The sensitivity of NMR and NQR spectrometers using dc SQUID amplifiers is compared to the sensitivity of spectrometers using conventional rf amplifiers. A SQUID-based spectrometer has a voltage sensitivity which is comparable to the best achieved by a FET-based spectrometer, at these temperatures and operating frequencies

Design of a transimpedance amplifier for a bio-optical fiber sensor

International Nuclear Information System (INIS)

Pola, L.; Camasa, J.; Gomez B, J.

2012-01-01

In this work we present a fairly detailed model for a photodiode coupled to an operational amplifier in the trans impedance circuit configuration, for the applications in Biotechnology. An optical signal of the fiber optic biosensor is detected by a photodiode and its photocurrent generated is introduced in the trans impedance amplifier. The proposed design uses a photodiode in photovoltaic mode, and its photocurrent is coupled to an amplifier with positive output. Finally, the trans impedance amplifier presents reliable design characteristics such as accuracy, stability, low noise, and the ability to measure photocurrent from 1nA to 100μA. (Author)

Current-Driven Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

2012-01-01

The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

Reflection amplifiers in self-regulated learning

NARCIS (Netherlands)

Verpoorten, Dominique

2012-01-01

Verpoorten, D. (2012). Reflection amplifiers in self-regulated learning. Doctoral thesis. November, 9, 2012, Heerlen, The Netherlands: Open Universiteit (CELSTEC). Datawyse / Universitaire Pers Maastricht.

A digitally assisted, signal folding neural recording amplifier.

Science.gov (United States)

Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

2014-08-01

A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

Subjective test of class D amplifiers without output filter

DEFF Research Database (Denmark)

Agerkvist, Finn T.; Fenger, Lars M.

2004-01-01

This paper presents the results of subjective listening tests designed to determine whether the output filter on class D amplifiers used in active loudspeakers can be omitted without audible errors occurring. The frequency range of the amplifiers was limited to 0-3 kHz corresponding to a woofer...

47 CFR 2.815 - External radio frequency power amplifiers.

Science.gov (United States)

2010-10-01

... 47 Telecommunication 1 2010-10-01 2010-10-01 false External radio frequency power amplifiers. 2... AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815 External radio frequency power amplifiers. (a) As used in this part, an external radio frequency power...

Gain characteristics of a saturated fiber optic parametric amplifier

DEFF Research Database (Denmark)

Rottwitt, Karsten; Lorenzen, Michael Rodas; Noordegraaf, Danny

2008-01-01

In this work we discuss saturation performance of a fiber optic parametric amplifier. A simple numerical model is described and applied to specific cases. A system experiment using a saturated amplifier illustrates a 4 dB improvement in required signal to noise ratio for a fixed bit error ratio....

Design and performance of the main amplifier system for the National Ignition Facility

International Nuclear Information System (INIS)

Beullier, J; Erlandson, A; Grebot, E; Guenet, J; Guenet, M; Horvath, J; Jancaitis, K; Larson, D; Lawson, J; LeTouze, G; Maille, X; Manes, K; Marshall, C; Mengue, T; Moor, E; Payne, S; Pedrotti, L; Rotter, M; Seznec, S; Sutton, S; Zapata, L.

1999-01-01

This paper describes the design and performance of flashlamp-pumped, Nd:glass. Brewster-angle slab amplifiers intended to be deployed in the National Ignition Facility (NIF). To verify performance, we tested a full-size, three-slab-long, NIF prototype amplifier, which we believe to be the largest flashlamp-pumped Nd:glass amplifier ever assembled. Like the NIF amplifier design, this prototype amplifier had eight 40-cm-square apertures combined in a four-aperture-high by two-aperture-wide matrix. Specially-shaped reflectors, anti-reflective coatings on the blastshields, and preionized flashlamps were used to increase storage efficiency. Cooling gas was flowed over the flashlamps to remove waste pump heat and to accelerate thermal wavefront recovery. The prototype gain results are consistent with model predictions and provide high confidence in the final engineering design of the NIF amplifiers. Although the dimensions, internal positions, and shapes of the components in the NIF amplifiers will be slightly different from the prototype, these differences are small and should produce only slight differences in amplifier performance

Detection of weak optical signals with a laser amplifier

International Nuclear Information System (INIS)

Kozlovskii, A. V.

2006-01-01

Detection of weak and extremely weak light signals amplified by linear and four-wave mixing laser amplifiers is analyzed. Photoelectron distributions are found for different input photon statistics over a wide range of gain. Signal-to-noise ratios are calculated and analyzed for preamplification schemes using linear and four-wave mixing amplifiers. Calculations show that the high signal-to-noise ratio (much higher than unity), ensuring reliable detection of weak input signals, can be attained only with a four-wave mixing preamplification scheme. Qualitative dependence of the signal-to-noise ratio on the quantum statistical properties of both signal and idler waves is demonstrated

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

Science.gov (United States)

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Low Loss Nanostructured Polymers for Chip-scale Waveguide Amplifiers.

Science.gov (United States)

Chen, George F R; Zhao, Xinyu; Sun, Yang; He, Chaobin; Tan, Mei Chee; Tan, Dawn T H

2017-06-13

On-chip waveguide amplifiers offer higher gain in small device sizes and better integration with photonic devices than the commonly available fiber amplifiers. However, on-chip amplifiers have yet to make its way into the mainstream due to the limited availability of materials with ideal light guiding and amplification properties. A low-loss nanostructured on-chip channel polymeric waveguide amplifier was designed, characterized, fabricated and its gain experimentally measured at telecommunication wavelength. The active polymeric waveguide core comprises of NaYF 4 :Yb,Er,Ce core-shell nanocrystals dispersed within a SU8 polymer, where the nanoparticle interfacial characteristics were tailored using hydrolyzed polyhedral oligomeric silsesquioxane-graft-poly(methyl methacrylate) to improve particle dispersion. Both the enhanced IR emission intensity from our nanocrystals using a tri-dopant scheme and the reduced scattering losses from our excellent particle dispersion at a high solid loading of 6.0 vol% contributed to the outstanding optical performance of our polymeric waveguide. We achieved one of the highest reported gain of 6.6 dB/cm using a relatively low coupled pump power of 80 mW. These polymeric waveguide amplifiers offer greater promise for integrated optical circuits due to their processability and integration advantages which will play a key role in the emerging areas of flexible communication and optoelectronic devices.

On the transition period from chemical to biological evolution

International Nuclear Information System (INIS)

Chela-Flores, J.

1991-06-01

We discuss the consequences of the hypothesis that biological evolution was contemporary with an important event in chemical evolution, namely, the induction of a small chiral bias by the electroweak neutral interaction, amplified by the Salam enhancement factor, which we discuss in terms of familiar crystallographic terms. (author). 18 refs, 3 tabs

Two-section semiconductor optical amplifier used as an efficient channel dropping node

DEFF Research Database (Denmark)

Jørgensen, Carsten; Storkfelt, Niels; Durhuus, T.

1992-01-01

High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated......High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated...

Diode-pumped laser amplifiers: application to 0.946 {mu}m Nd:YAG

Energy Technology Data Exchange (ETDEWEB)

Barnes, Norman P [NASA Langley Research Center, Hampton, VA 23681 (United States); Axenson, Theresa J [Science and Technology Corporation, 10 Basil Sawyer Drive, Hampton, VA 23666 (United States); Jr, Donald J Reichle [NASA Langley Research Center, Hampton, VA 23681 (United States); Walsh, Brian M [NASA Langley Research Center, Hampton, VA 23681 (United States)

2003-03-14

A diode-pumped laser amplifier model is derived from first principles and applied to a Nd:YAG amplifier operating on the {sup 4}F{sub 3/2} to {sup 4}I{sub 9/2} transition at 0.946 {mu}m. The effects of amplified spontaneous emission are included in the model and the addition of this effect is shown to produce better agreement with the data. The amplifier model includes effects of the transverse and longitudinal variation of the pump beam, transverse and longitudinal variation of the probe beam, and multiple passes of the probe beam. Experimental results obtained with a quasi four-level Nd:YAG amplifier operating at 0.946 {mu}m are used to validate the model. The amplifier was evaluated as a function of the pump energy, the probe energy, the probe beam radius, the pulse repetition frequency and the temperature. For all of the experimental conditions, the experimental results and the model agree.

High efficiency class-I audio power amplifier using a single adaptive supply

International Nuclear Information System (INIS)

Peng Zhenfei; Yang Shanshand; Feng Yong; Hong Zhiliang; Liu Yang

2012-01-01

A high efficiency class-I linear audio power amplifier (PA) with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD+N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 Ω speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-I amplifier suitable for portable and RF sensitive applications. (semiconductor integrated circuits)

Asymmetric gain-saturated spectrum in fiber optical parametric amplifiers

DEFF Research Database (Denmark)

Lali-Dastjerdi, Zohreh; Rottwitt, Karsten; Galili, Michael

2012-01-01

We demonstrate experimentally and numerically an unexpected spectral asymmetry in the saturated-gain spectrum of single-pump fiber optical parametric amplifiers. The interaction between higher-order four-wave mixing products and dispersive waves radiated as an effect of third-order dispersion inf...... characteristics of the amplifier and shows local maxima for specific dispersion values....

KrF laser amplifier with phase-conjugate Brillouin retroreflectors.

Science.gov (United States)

Gower, M C

1982-09-01

We have demonstrated the use of phase-conjugate stimulated Brillouin scattering mirrors to produce high-quality, short-pulse KrF laser beams from angular multiplexed and regenerative amplifiers. The mirror was also shown to isolate systems optically from amplifier spontaneous emission. Automatic alignment of targets using this mirror as a retroreflector was also demonstrated.

Do aphid colonies amplify their emission of alarm pheromone?

Science.gov (United States)

Hatano, Eduardo; Kunert, Grit; Bartram, Stefan; Boland, Wilhelm; Gershenzon, Jonathan; Weisser, Wolfgang W

2008-09-01

When aphids are attacked by natural enemies, they emit alarm pheromone to alert conspecifics. For most aphids tested, (E)-beta-farnesene (EBF) is the main, or only, constituent of the alarm pheromone. In response to alarm pheromone, alerted aphids drop off the plant, walk away, or attempt to elude predators. However, under natural conditions, EBF concentration might be low due to the low amounts emitted, to rapid air movement, or to oxidative degradation. To ensure that conspecifics are warned, aphids might conceivably amplify the alarm signal by emitting EBF in response to EBF emitted by other aphids. To examine whether such amplification occurs, we synthesized deuterated EBF (DEBF), which allowed us to differentiate between applied and aphid-derived chemical. Colonies of Acyrthosiphon pisum were treated with DEBF, and headspace volatiles were collected and analyzed for evidence of aphid-derived EBF. No aphid-derived EBF was detected, suggesting that amplification of the alarm signal does not occur. We discuss the disadvantages of alarm signal reinforcement.

Prototype disc amplifier for Iskra-6 facility

International Nuclear Information System (INIS)

Grigorovich, S.V.; Eroshenko, V.F.; Krotov, V.A.; Demidov, V.L.; Kalinin, N.V.; Kurunov, R.F.; Smirnov, V.G.; Fomin, V.M.

2006-01-01

Eight-channel disk amplifiers of the ISKRA-6 facility are made up of sections. An amplifier section consists of eight active elements (2*4) made of KGSS-0180/35-grade neodymium phosphate glass 400*690*40 mm in size located in frames at the Brewster angle. Twenty flash-lamps are arranged in one amplifier module. The flash-lamps have an inter electrode distance of 1600 mm, the tube is 40 mm in inner diameter. The results of numerical investigations into the dynamics of high-current pulse radiation discharge are presented. The investigations were carried out by the 1-dimensional RMHD-model. This model takes into account the transient processes in the electric circuit and the physical processes in the discharge plasma: ionization, Joule heating, thermal conductivity, radiation transfer and plasma motion caused by the non-uniformity of energy introduction into the discharge in case of a non-uniform initial ionization of gas in the pumping lamp. The experimental results of spectral measurements and light efficiency of the flash-lamps depending on specific power and value of energy contribution are presented

Influence of mode competition on beam quality of fiber amplifier

International Nuclear Information System (INIS)

Xiao Qi-Rong; Yan Ping; Sun Jun-Yi; Chen Xiao; Ren Hai-Cui; Gong Ma-Li

2014-01-01

Theoretical and experimental studies of the influence of the mode competition on the output beam quality of fiber amplifiers are presented. Rate equations and modal decomposition method are used in the theoretical model. In the experiment, the output beam-quality factor of a fiber amplifier, which is based on a Yb-doped double-clad large mode area fiber as a function of the seed beam quality and the pump power of the amplifier, is measured. The experimental results are consistent with the theoretical analysis. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Minimizing Crosstalk in Self Oscillating Switch Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Ploug, Rasmus Overgaard

2012-01-01

a method to minimize this phenomenon by improving the integrity of the various power distribution systems of the amplifier. The method is then applied to an amplifier built for this investigation. The results show that the crosstalk is suppressed with 30 dB, but is not entirely eliminated......The varying switching frequencies of self oscillating switch mode audio amplifiers have been known to cause interchannel intermodulation disturbances in multi channel configurations. This crosstalk phenomenon has a negative impact on the audio performance. The goal of this paper is to present...

Research on disk amplifiers as polarizer of electro-optical switch

CERN Document Server

Zheng Kui Xing; Feng Bin; Zheng Jian; Dong Yun; Peng Zhi Tao; Lu Jing Ping; Jing Feng; Wei Xiao Feng

2002-01-01

It benefits to decrease the engineering cost and to debase the technical crisis by the polarizer composed of amplifier Nd sup 3 sup + : glass slabs located with the Brewster angle in large scale multi-passes laser facility. The relationships of the isolation efficiency with the numbers of slab, the growth of the amplifier and the switch efficiency of Pockels cell are calculated theoretically. The experimental results indicated that the output energy ratio of this Pockels cell-amplifier isolation system is 1 : 8 while Pockels cell is on and off

Complementary DNA-amplified fragment length polymorphism ...

African Journals Online (AJOL)

Complementary DNA-amplified fragment length polymorphism (AFLP-cDNA) analysis of differential gene expression from the xerophyte Ammopiptanthus mongolicus in response to cold, drought and cold together with drought.

A Review of High Voltage Drive Amplifiers for Capacitive Actuators

DEFF Research Database (Denmark)

Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

2012-01-01

This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

Design optimization of single-main-amplifier KrF laser-fusion systems

International Nuclear Information System (INIS)

Harris, D.B.; Pendergrass, J.H.

1985-01-01

KrF lasers appear to be a very promising laser fusion driver for commercial applications. The Large Amplifier Module for the Aurora Laser System at Los Alamos is the largest KrF laser in the world and is currently operating at 5 kJ with 10 to 15 kJ eventually expected. The next generation system is anticipated to be a single-main-amplifier system that generates approximately 100 kJ. This paper examines the cost and efficiency tradeoffs for a complete single-main-amplifier KrF laser fusion experimental facility. It has been found that a 7% efficient $310/joule complete laser-fusion system is possible by using large amplifier modules and high optical fluences

A numerical design approach for single amplifier, Active-RC Butterworth filter of order 5

DEFF Research Database (Denmark)

Gaunholt, Hans

2007-01-01

filter applying just one operational amplifier coupled as a unity gain amplifier. It is shown that the influence from the real operational amplifier may be reduced by trimming just one resistor in the circuit. The unity gain amplifiers have the advantage of providing low power consumption, yielding...

A Transimpedance Amplifier for Remotely Located Quartz Tuning Forks

OpenAIRE

Kleinbaum, Ethan; Csathy, Gabor

2012-01-01

The cable capacitance in cryogenic and high vacuum applications of quartz tuning forks imposes severe constraints on the bandwidth and noise performance of the measurement. We present a single stage low noise transimpedance amplifier with a bandwidth exceeding 1 MHz and provide an in-depth analysis of the dependence of the amplifier parameters on the cable capacitance.

High peak power picosecond hybrid fiber and solid-state amplifier system

International Nuclear Information System (INIS)

Wushouer, X; Yan, P; Yu, H; Liu, Q; Fu, X; Yan, X; Gong, M

2010-01-01

We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO 4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO 4 – Nd:YVO 4 – YVO 4 rod crystal was used as the gain medium. The 53 W TEM 00 mode with the peak power of 40 kW, beam quality of M 2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

Predistortion of a Bidirectional Cuk Audio Amplifier

DEFF Research Database (Denmark)

Birch, Thomas Hagen; Nielsen, Dennis; Knott, Arnold

2014-01-01

Some non-linear amplifier topologies are capable of providing a larger voltage gain than one from a DC source, which could make them suitable for various applications. However, the non-linearities introduce a significant amount of harmonic distortion (THD). Some of this distortion could be reduced...... using predistortion. This paper suggests linearizing a nonlinear bidirectional Cuk audio amplifier using an analog predistortion approach. A prototype power stage was built and results show that a voltage gain of up to 9 dB and reduction in THD from 6% down to 3% was obtainable using this approach....

Optimization of a high efficiency FEL amplifier

International Nuclear Information System (INIS)

Schneidmiller, E.A.; Yurkov, M.V.

2014-10-01

The problem of an efficiency increase of an FEL amplifier is now of great practical importance. Technique of undulator tapering in the post-saturation regime is used at the existing X-ray FELs LCLS and SACLA, and is planned for use at the European XFEL, Swiss FEL, and PAL XFEL. There are also discussions on the future of high peak and average power FELs for scientific and industrial applications. In this paper we perform detailed analysis of the tapering strategies for high power seeded FEL amplifiers. Application of similarity techniques allows us to derive universal law of the undulator tapering.

Tapered amplifier laser with frequency-shifted feedback

Directory of Open Access Journals (Sweden)

A. Bayerle, S. Tzanova, P. Vlaar, B. Pasquiou, F. Schreck

2016-10-01

Full Text Available We present a frequency-shifted feedback (FSF laser based on a tapered amplifier. The laser operates as a coherent broadband source with up to 370GHz spectral width and 2.3us coherence time. If the FSF laser is seeded by a continuous-wave laser a frequency comb spanning the output spectrum appears in addition to the broadband emission. The laser has an output power of 280mW and a center wavelength of 780nm. The ease and flexibility of use of tapered amplifiers makes our FSF laser attractive for a wide range of applications, especially in metrology.

A high efficiency PWM CMOS class-D audio power amplifier

Energy Technology Data Exchange (ETDEWEB)

Zhu Zhangming; Liu Lianxi; Yang Yintang [Institute of Microelectronics, Xidian University, Xi' an 710071 (China); Lei Han, E-mail: zmyh@263.ne [Xi' an Power-Rail Micro Co., Ltd, Xi' an 710075 (China)

2009-02-15

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 mum CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 muA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm{sup 2}. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A high efficiency PWM CMOS class-D audio power amplifier

International Nuclear Information System (INIS)

Zhu Zhangming; Liu Lianxi; Yang Yintang; Lei Han

2009-01-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm 2 . With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A high efficiency PWM CMOS class-D audio power amplifier

Science.gov (United States)

Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

2009-02-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A TORC2-Akt feedforward topology underlies HER3 resiliency in HER2-amplified cancers

Science.gov (United States)

Amin, Dhara N.; Ahuja, Deepika; Yaswen, Paul; Moasser, Mark M.

2015-01-01

The requisite role of HER3 in HER2-amplified cancers is beyond what would be expected as a dimerization partner or effector substrate and it exhibits a substantial degree of resiliency that mitigates the effects of HER2-inhibitor therapies. To better understand the roots of this resiliency, we conducted an in-depth chemical-genetic interrogation of the signaling network downstream of HER3. A unique attribute of these tumors is the deregulation of TORC2. The upstream signals that ordinarily maintain TORC2 signaling are lost in these tumors, and instead TORC2 is driven by Akt. We find that in these cancers HER3 functions as a buffering arm of an Akt-TORC2 feed-forward loop that functions as a self-perpetuating module. This network topology alters the role of HER3 from a conditionally engaged ligand-driven upstream physiologic signaling input to an essential component of a concentric signaling throughput highly competent at preservation of homeostasis. The competence of this signaling topology is evident in its response to perturbation at any of its nodes. Thus a critical pathophysiological event in the evolution of HER2-amplified cancers is the loss of the input signals that normally drive TORC2 signaling, repositioning it under Akt dependency and fundamentally altering the role of HER3. This reprogramming of the downstream network topology is a key aspect in the pathogenesis of HER2-amplified cancers and constitutes a formidable barrier in the targeted therapy of these cancers. PMID:26438156

Development of 650 MHz solid state RF amplifier for proton accelerator

International Nuclear Information System (INIS)

Jain, Akhilesh; Sharma, Deepak; Gupta, Alok; Tiwari, Ashish; Rao, Nageswar; Sekar, Vasanthi; Lad, M.; Hannurkar, P.R.; Gupta, P.D.

2011-01-01

Design and development of 30 kW high powers RF source at 650 MHz, using solid RF state technology, has been initiated at RRCAT. The indigenous technology development efforts will be useful for the proposed high power proton accelerators for SNS/ADS applications. In this 650 MHz amplifier scheme, 30 kW CW RF power will be generated using modular combination of 8 kW amplifier units. Necessary studies were carried out for device selection, choice of amplifier architecture and design of high power combiners and dividers. Presently RF amplifier delivering 250 W at 650 MHz has been fabricated and tested. Towards development of high power RF components, design and engineering prototyping of 16-port power combiner, directional coupler and RF dummy loads has been completed. The basic 8 kW amplifier unit is designed to provide power gain of 50 dB, bandwidth of 20 MHz and spurious response below 30 dB from fundamental signal. Based on the results of circuit simulation studies and engineering prototyping of amplifier module, two RF transistor viz. MRF3450 and MRF 61K were selected as solid state active devices. Impedance matching network in amplifier module is designed using balanced push pull configuration with transmission line BALUN. Due to high circulating current near drain side, metal clad RF capacitors were selected which helps in avoiding hot spot from output transmission path, ensuring continuous operation at rated RF power without damage to RF board. 350 W circulator is used to protect the RF devices from reflected power. Based on the prototype design and measured performance, one of these RF transistors will be selected to be used as workhorse for all amplifier modules. Two amplifier modules are mounted on water cooled copper heat-sink ensuring proper operating temperature for reliable and safe operation of amplifier. Also real time control system and data logger has been developed to provide DAQ and controls in each rack. For power combining and power measurement

A low noise charge sensitive amplifier for use in vacuum photo diode readout

International Nuclear Information System (INIS)

Stephenson, R.

1982-08-01

The amplifier described consists of a charge sensitive pre-amplifier optimised for low noise with low values of input shunt capacitance, and a shaping amplifier providing both differentiation and integration. Amplifier gain is adjustable up to a maximum of approximately 100 μV/electron with a rise time of 2 μS to the peak of the output voltage, and with an open circuit input noise level of 150 electrons RMS. (author)

A numerical design approach for single amplifier, Active-RC Butterworth filter of order 5

OpenAIRE

Gaunholt, Hans

2007-01-01

A design method is presented for the design of all pole lowpass active-RC filters applying operational amplifiers. The operational amplifier model used is the integrator model: omegat/s where omegat is the unity gain frequency. The design method is used for the design of a fifth order Butterworth filter applying just one operational amplifier coupled as a unity gain amplifier. It is shown that the influence from the real operational amplifier may be reduced by trimming just one resistor in th...

Self-oscillating modulators for direct energy conversion audio power amplifiers

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating...

A Power Efficient Audio Amplifier Combining Switching and Linear Techniques

NARCIS (Netherlands)

van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

1998-01-01

Integrated Class D audio amplifiers are very power efficient, but require an external filter which prevents further integration. Also due to this filter, large feedback factors are hard to realise, so that the load influences the distortion- and transfer characteristics. The amplifier presented in

Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

DEFF Research Database (Denmark)

Moradi, Farshad

A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power...

A real-time control system architecture for industrial power amplifiers

NARCIS (Netherlands)

Qureshi, F.; Spinu, V.; Wijnands, C.G.E.; Lazar, M.

2013-01-01

Power amplifiers are a highly important component in a range of industrial applications, such as, servo-drives, magnetic resonance imaging, energy systems, and audio. The control system for power amplifiers should satisfy a range of requirements, e.g., offset free tracking, stability margins, and

Combined Yb/Nd driver for optical parametric chirped pulse amplifiers.

Science.gov (United States)

Michailovas, Kirilas; Baltuska, Andrius; Pugzlys, Audrius; Smilgevicius, Valerijus; Michailovas, Andrejus; Zaukevicius, Audrius; Danilevicius, Rokas; Frankinas, Saulius; Rusteika, Nerijus

2016-09-19

We report on the developed front-end/pump system for optical parametric chirped pulse amplifiers. The system is based on a dual output fiber oscillator/power amplifier which seeds and assures all-optical synchronization of femtosecond Yb and picosecond Nd laser amplifiers operating at a central wavelength of 1030 nm and 1064 nm, respectively. At the central wavelength of 1030 nm, the fiber oscillator generates partially stretched 4 ps pulses with the spectrum supporting a scaling currently is prevented by limited dimensions of the diffraction gratings, which, because of the fast progress in MLD grating manufacturing technologies is only a temporary obstacle.

Design and Fabrication of a 1 THz Backward Wave Amplifier

DEFF Research Database (Denmark)

Paoloni, Claudio; Di Carlo, Aldo; Brunetti, Francesca

2011-01-01

, to get a level of output power to enable applications at these frequencies. The OPTHER (Optically driven THz amplifier) project, funded by the European Community, is on the road to realize the first 1 THz vacuum tube amplifier. Technology at the state of the art has been used for the realization...... of the parts with dimensions supporting THz frequencies. A backward wave amplifier configuration is chosen to make the parts realizable. A carbon nanotube cold cathode has been considered for electron generation. A thermionic micro electron gun is designed to test the tube. A novel slow-wave structure (SWS...

1-MHz high power femtosecond Yb-doped fiber chirped-pulse amplifier

Science.gov (United States)

Hu, Zhong-Qi; Yang, Pei-Long; Teng, Hao; Zhu, Jiang-Feng; Wei, Zhi-Yi

2018-01-01

A practical femtosecond polarization-maintaining Yb-doped fiber amplifier enabling 153 fs transform-limited pulse duration with 32 μJ pulse energy at 1 MHz repetition rate corresponding to a peak power of 0.21 GW is demonstrated. The laser system based on chirped-pulse amplification (CPA) technique is seeded by a dispersion managed, nonlinear polarization evolution (NPE) mode-locked oscillator with spectrum bandwidth of 31 nm at 1040 nm and amplified by three fiber pre-amplifying stages and a rod type fiber main amplifying stage. The laser works with beam quality of M2 of 1.3 and power stability of 0.63% (root mean square, RMS) over 24 hours will be stable sources for industrial micromachining, medical therapy and scientific research.

Static thermo-optic instability in double-pass fiber amplifiers

DEFF Research Database (Denmark)

Lægsgaard, Jesper

2016-01-01

A coupled-mode formalism, earlier used to describe transverse mode instabilities in single-pass optical fiber amplifiers, is extended to the case of double-pass amplifiers. Contrary to the single-pass case, it is shown that the thermo-optic nonlinearity can couple light at the same frequency...... between the LP01 and LP11 modes, leading to a static deformation of the output beam profile. This novel phenomenon is caused by the interaction of light propagating in either direction with thermo-optic index perturbations caused by light propagating in the opposite direction. The threshold power...... for the static deformation is found to be several times lower than what is typically found for the dynamic modal instabilities observed in single-pass amplifiers. (C) 2016 Optical Society of America...

Class H power amplifier for power saving in fluxgate current transducers

OpenAIRE

Velasco Quesada, Guillermo; Román Lumbreras, Manuel; Pérez Delgado, Raul; Conesa Roca, Alfons

2016-01-01

This paper presents a new improvement in the design of a fluxgate-based current transducer in order to reduce the power consumption of control electronics. The proposed improvement involves the replacement of the output linear amplifier of the transducer by a class H amplifier. The output amplifier is devoted to the magnetic flux compensation and generates the transducer output current, which is proportional to the current to be measured. In this way, it is possible to reduce significantly th...

Amplifying Islam : Pluralism, Secularism, and Religious Sounds in The Netherlands

NARCIS (Netherlands)

Tamimi Arab, P.

2015-01-01

This dissertation is an ethnographic study of the amplified azan, the Islamic call to prayer, in the Netherlands, adding a sonic dimension to analyses of the politics of Islamic aesthetics in the western world. Often rejected by opponents as noise pollution, facilitating the amplified azan is an

Detailed dynamic model for semiconductor optical amplifiers and their crosstalk and intermodulation distortion

DEFF Research Database (Denmark)

Durhuus, Terji; Mikkelsen, Benny; Stubkjær, Kristian

1992-01-01

. The model is used to assess intermodulation distortion and crosstalk. Cascaded amplifiers are considered, and the crosstalk and intermodulation distortion due to cascaded amplifiers are found to accumulate by adding together in amplitude; this may limit the number or cascaded amplifiers in multichannel...

A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

OpenAIRE

Ali Reza Zirak; Sobhan Roshani

2016-01-01

In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

Dielectric waveguide amplifiers and lasers

NARCIS (Netherlands)

Pollnau, Markus

The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

Large area electron beam pumped krypton fluoride laser amplifier

International Nuclear Information System (INIS)

Sethian, J.D.; Obenschain, S.P.; Gerber, K.A.; Pawley, C.J.; Serlin, V.; Sullivan, C.A.; Webster, W.; Deniz, A.V.; Lehecka, T.; McGeoch, M.W.; Altes, R.A.; Corcoran, P.A.; Smith, I.D.; Barr, O.C.

1997-01-01

Nike is a recently completed multi-kilojoule krypton fluoride (KrF) laser that has been built to study the physics of direct drive inertial confinement fusion. This paper describes in detail both the pulsed power and optical performance of the largest amplifier in the Nike laser, the 60 cm amplifier. This is a double pass, double sided, electron beam-pumped system that amplifies the laser beam from an input of 50 J to an output of up to 5 kJ. It has an optical aperture of 60 cm x 60 cm and a gain length of 200 cm. The two electron beams are 60 cm high x 200 cm wide, have a voltage of 640 kV, a current of 540 kA, and a flat top power pulse duration of 250 ns. A 2 kG magnetic field is used to guide the beams and prevent self-pinching. Each electron beam is produced by its own Marx/pulse forming line system. The amplifier has been fully integrated into the Nike system and is used on a daily basis for laser-target experiments. copyright 1997 American Institute of Physics

Charge sensitive amplifies. The state of arts

Energy Technology Data Exchange (ETDEWEB)

Mori, Kunishiro [Clear Pulse Co., Tokyo (Japan)

1996-07-01

In the radiation detectors, signals are essentially brought with charges produced by radiation, then it is naturally the best way to use a charge sensitive amplifier (CSA) system to extract those signals. The CSA is thought to be the best amplifier suitable to almost all the radiation detectors, if neglecting economical points of view. The CSA has been only applied to special fields like radiation detection because the concept of `charges` is not so universal against the concepts of `voltage` and `current`. The CSA, however, is low in noise and a high speed amplifier and may be applicable not only to radiation measurement but also piezoelectric devices and also bolometers. In this article, noise in the CSA, basic circuit on the CSA, concepts of `equivalent noise charge` (ENC), a method for the ENC, and importance of the `open-loop gain` in the CSA to achieve better performance of it and how to realize in a practical CSA were described. And, characteristics on a counting rate of the CSA, various circuit used in the CSA, and CSAs which are commercially available at present and special purpose CSAs were also introduced. (G.K.)

Wideband amplifier design

CERN Document Server

Hollister, Allen L

2007-01-01

In this book, the theory needed to understand wideband amplifier design using the simplest models possible will be developed. This theory will be used to develop algebraic equations that describe particular circuits used in high frequency design so that the reader develops a ""gut level"" understanding of the process and circuit. SPICE and Genesys simulations will be performed to show the accuracy of the algebraic models. By looking at differences between the algebraic equations and the simulations, new algebraic models will be developed that include parameters originally left out of the model

Building valve amplifiers

CERN Document Server

Jones, Morgan

2013-01-01

Building Valve Amplifiers is a unique hands-on guide for anyone working with tube audio equipment--as an electronics hobbyist, audiophile or audio engineer. This 2nd Edition builds on the success of the first with technology and technique revisions throughout and, significantly, a major new self-build project, worked through step-by-step, which puts into practice the principles and techniques introduced throughout the book. Particular attention has been paid to answering questions commonly asked by newcomers to the world of the valve, whether audio enthusiasts tackling their first build or

Analysis and simulation of nonlinearity and effects of spontaneous emission in Schottky-junction-based plasmonic amplifiers.

Science.gov (United States)

Livani, Abdolber Mallah; Kaatuzian, Hassan

2015-07-01

An amplifier that operates on surface plasmon polaritons has been analyzed and simulated. Nonlinearity behavior and the spontaneous emission effects of the plasmonic amplifier are investigated in this paper. A rate equations approach has been used in which parameters are derived from simulation results of the plasmonic amplifier (Silvaco/ATLAS). Details on the method of this derivation are included, which were not previously reported. Rate equations are solved numerically by MATLAB codes. These codes verify the Silvaco results. The plasmonic amplifier operates on surface plasmons with a free-space wavelength of 1550 nm. Results show that, even without the effect of spontaneous emission, gain of the plasmonic amplifier saturates in high input levels. Saturation power, which can be used for comparing nonlinearity of different amplifiers, is 2.1 dBm for this amplifier. Amplified spontaneous emission reduces the gain of the amplifiers, which is long. There is an optimum value for the length of the amplifier. For the amplifier of this work, the optimum length for the small signal condition is 265 μm.

Ultrafast optical signal processing using semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....

Noise figure of amplified dispersive Fourier transformation

International Nuclear Information System (INIS)

Goda, Keisuke; Jalali, Bahram

2010-01-01

Amplified dispersive Fourier transformation (ADFT) is a powerful tool for fast real-time spectroscopy as it overcomes the limitations of traditional optical spectrometers. ADFT maps the spectrum of an optical pulse into a temporal waveform using group-velocity dispersion and simultaneously amplifies it in the optical domain. It greatly simplifies spectroscopy by replacing the diffraction grating and detector array in the conventional spectrometer with a dispersive fiber and single-pixel photodetector, enabling ultrafast real-time spectroscopic measurements. Following our earlier work on the theory of ADFT, here we study the effect of noise on ADFT. We derive the noise figure of ADFT and discuss its dependence on various parameters.

Active multispectral reflection fingerprinting of persistent chemical agents

Science.gov (United States)

Tholl, H. D.; Münzhuber, F.; Kunz, J.; Raab, M.; Rattunde, M.; Hugger, S.; Gutty, F.; Grisard, A.; Larat, C.; Papillon, D.; Schwarz, M.; Lallier, E.; Kastek, M.; Piatkowski, T.; Brygo, F.; Awanzino, C.; Wilsenack, F.; Lorenzen, A.

2017-10-01

Remote detection of toxic chemicals of very low vapour pressure deposited on surfaces in form of liquid films, droplets or powder is a capability that is needed to protect operators and equipment in chemical warfare scenarios and in industrial environments. Infrared spectroscopy is a suitable means to support this requirement. Available instruments based on passive emission spectroscopy have difficulties in discriminating the infrared emission spectrum of the surface background from that of the contamination. Separation of background and contamination is eased by illuminating the surface with a spectrally tune-able light source and by analyzing the reflectivity spectrum. The project AMURFOCAL (Active Multispectral Reflection Fingerprinting of Persistent Chemical Agents) has the research topic of stand-off detection and identification of chemical warfare agents (CWAs) with amplified quantum cascade laser technology in the long-wave infrared spectral range. The project was conducted under the Joint Investment Programme (JIP) on CBRN protection funded through the European Defence Agency (EDA). The AMURFOCAL instrument comprises a spectrally narrow tune-able light source with a broadband infrared detector and chemometric data analysis software. The light source combines an external cavity quantum cascade laser (EC-QCL) with an optical parametric amplifier (OPA) to boost the peak output power of a short laser pulse tune-able over the infrared fingerprint region. The laser beam is focused onto a target at a distance between 10 and 20 m. A 3D data cube is registered by tuning the wavelength of the laser emission while recording the received signal scattered off the target using a multi-element infrared detector. A particular chemical is identified through the extraction of its characteristic spectral fingerprint out of the measured data. The paper describes the AMURFOCAL instrument, its functional units, and its principles of operation.

M.V.A. amplifier for plasma position control by vertical magnetic field

International Nuclear Information System (INIS)

Schenk, G.

1978-01-01

The radial plasma position in the WEGA torus is controlled by a power amplifier, acting on the vertical magnetic field. Up to now the feedback loop contains, as amplifying elements, two 90 kW DC-transistor amplifiers, acting in push-pull operation. As increased plasma stability and lifetime is desirable, we have to increase the power amplifier to about 1 Megawatt. Industry offered a thyristor rectifier, operating at 50 or 300 Hz, and alternatively a thyristor chopper amplifier at a few kHz frequency response. Theses offers did not correspond to our demand, as far as response time, price and primary power requirements are concerned. We have implemented a bipolar switching-type amplifier (also called H-bridge converter) with the characteristics: time response < 0,05 ms., pulsed power = 1 MW (400 V, 2500 A), primary power = 2,5 kW. As power switch, a network of parallel high voltage transistors, driven by three transistor stages, has been chosen, to control a vertical magnetic field or +/- 180 G, with a precision of about one per cent. Precautions for transistor switches concerning mainly critical voltage, current, instantaneous power and selfoscillating behaviour have been taken. This systems corresponds to our demands

Dispersion-Engineered Traveling Wave Kinetic Inductance Parametric Amplifier

Science.gov (United States)

Zmuidzinas, Jonas (Inventor); Day, Peter K. (Inventor)

2014-01-01

A traveling wave kinetic inductance parametric amplifier comprises a superconducting transmission line and a dispersion control element. The transmission line can include periodic variations of its dimension along its length. The superconducting material can include a high normal state resistivity material. In some instances the high normal state resistivity material includes nitrogen and a metal selected from the group consisting of titanium, niobium and vanadium. The traveling wave kinetic inductance parametric amplifier is expected to exhibit a noise temperature below 100 mK/GHz.

Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

CERN Document Server

Božanić, Mladen

2016-01-01

This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

Gain measurements on a prototype NIF/LMJ amplifier pump cavity

International Nuclear Information System (INIS)

Rotter, M.D.; McCracken, R.; Erlandson, A.; Guenet, M.

1996-12-01

We are currently developing large-aperture amplifiers for the National Ignition Facility (NIF) and Laser Megajoules (LMJ) lasers. These multisegment amplifiers are of the flashlamp-pumped, Nd:Glass qW and are designed to propagate a nominally 36 cm square beam. The apertures within a particular amplifier bundle are arranged in a four-high by two-wide configuration and utilize two side lamp arrays and a central flashlamp array for pumping. The configuration is very similar to that used in the Beamlet laser, a single-beam prototype for the NIF/LMJ lasers, which has four apertures arranged in a two- high by two-wide configuration

Radiofrequency amplifier based on a DC superconducting quantum interference device

International Nuclear Information System (INIS)

Martinis, J.M.; Hilbert, C.; Clarke, J.

1986-01-01

A method is described of amplifying a radiofrequency signal consisting of: disposing a single symmetrically biased dc SQUID and an input coil within a superconducting shield, the dc SQUID having a superconducting ring interrupted by two shunted Josephson junctions, and the input coil being inductively coupled solely to the ring of the single SQUID, establishing a constant magnetic flux threading the SQUID ring, applying the radiofrequency signal to the input coil from outside of the superconducting shield, obtaining an amplified radiofrequency signal solely from across the ring of the single SQUID, transmitting the amplified radiofrequency signal from across the SQUID ring to the outside of the superconducting shield

High-performace cladding-pumped erbium-doped fibre laser and amplifier

International Nuclear Information System (INIS)

Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Lipatov, D S; Vechkanov, N N; Guryanov, Aleksei N

2012-01-01

We report cladding-pumped erbium-doped fibre laser and amplifier configurations. Through fibre design optimisation, we have achieved a record-high laser slope efficiency, 40 % with respect to absorbed pump power (λ = 976 nm), and an output power of 7.5 W. The erbium-doped fibre amplifier efficiency reaches 32 %.

Amplified spontaneous emission measurements on the Aurora large aperture module

International Nuclear Information System (INIS)

Oertel, J.A.; Czuchlewski, S.J.; Leland, W.T.; Turner, T.P.

1990-01-01

The large aperture module (LAM) of the Aurora KrF laser can be used to address a number of issues that relate to the scaling of KrF amplifiers to larger ICF systems. Perhaps foremost among these are the possible effects of amplified spontaneous emission (ASE) on laser performance. To assess this problem a 3-D computer code has been developed to model these ASE effects. The code uses an iterative procedure to arrive at a self-consistent steady state solution to the 3-D distribution of coherent and incoherent fluxes within the amplifier. Two-pass energy extraction, wall reflectivity, and nonuniform excitation are included in the model. The authors previously reported the effects of ASE on the small signal gains measured in the 1- x 1- x 2-m 3 LAM. The code also makes quantitative predictions of the ASE that should be generated in the amplifier. This paper indicates the radiance expected for a medium of uniform gain in terms of the (g - ν)L product and the parameter g/a. The quantity (g - ν)L is the product of the net gain and the path length along the direction of observation. The present experiments compare values of ASE measured at various locations around the LAM with the code predictions. The impact of ASE on amplifier output, is also discussed

Design of low noise transimpedance amplifier for intravascular ultrasound

KAUST Repository

Reda, Dina

2009-11-01

In this paper, we study transimpedance amplifiers for capacitive sensing applications with a focus on Intravascular Ultra Sound (IVUS). We employ RF noise cancellation technique on capacitive feedback based transimpedance amplifiers. This technique eliminates the input-referred noise of TIAs completely and enhances the dynamic range of front-end electronics. Simulation results verify the proposed technique used in two different TIA topologies employing shunt-shunt feedback. ©2009 IEEE.

Nonclassical photon streams using rephased amplified spontaneous emission

International Nuclear Information System (INIS)

Ledingham, Patrick M.; Naylor, William R.; Longdell, Jevon J.; Beavan, Sarah E.; Sellars, Matthew J.

2010-01-01

We present a fully quantum mechanical treatment of optically rephased photon echoes. These echoes exhibit noise due to amplified spontaneous emission; however, this noise can be seen as a consequence of the entanglement between the atoms and the output light. With a rephasing pulse one can get an 'echo' of the amplified spontaneous emission, leading to light with nonclassical correlations at points separated in time, which is of interest in the context of building wide bandwith quantum repeaters. We also suggest a wideband version of DLCZ protocol based on the same ideas.

1000 kW ICRH amplifiers for MFTF-B

International Nuclear Information System (INIS)

Boksberger, U.

1986-01-01

For the startup of the MFTF-B ICRH heating will be applied. Two commercial amplifiers derived from standard broadcast transmitters provide 1000 kW RF power each into a matching system for any VSWR as high as 1.5. Emphasis is put on the specific environment of magnetic fields and seismic loads as well as to the particular RF power control requirements and remote operation. Also addressed is the amplifier's performance into a typical load. The load variations due to the MFTF-B plasma coupling were calculated by TRW

Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

Science.gov (United States)

Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

2014-03-15

Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

Stability of a 500 km erbium-doped fiber amplifier cascade

DEFF Research Database (Denmark)

Lumholt, Ole; Bjarklev, Anders Overgaard; Povlsen, Jørn Hedegaard

1992-01-01

The stability of a cascade system of erbium-doped fiber amplifiers, due to pump and signal power variations, has been examined by use of a very accurate model. Even with an automatic gain control loop included, a fallout of a pump laser in the first inline amplifier is shown to produce a more than...

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

Directory of Open Access Journals (Sweden)

J. Sturm

2014-04-01

Full Text Available The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.

Multi-path interferometric Josephson directional amplifier for qubit readout

Science.gov (United States)

Abdo, Baleegh; Bronn, Nicholas T.; Jinka, Oblesh; Olivadese, Salvatore; Brink, Markus; Chow, Jerry M.

2018-04-01

We realize and characterize a quantum-limited, directional Josephson amplifier suitable for qubit readout. The device consists of two nondegenerate, three-wave-mixing amplifiers that are coupled together in an interferometric scheme, embedded in a printed circuit board. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the device, which plays the role of the magnetic field in a Faraday medium. Directional amplification and reflection-gain elimination are induced via wave interference between multiple paths in the system. We measure and discuss the main figures of merit of the device and show that the experimental results are in good agreement with theory. An improved version of this directional amplifier is expected to eliminate the need for bulky, off-chip isolation stages that generally separate quantum systems and preamplifiers in high-fidelity, quantum-nondemolition measurement setups.

Optimal control of a high-frequency class-D amplifier

DEFF Research Database (Denmark)

Dahl, Nicolai J.; Iversen, Niels Elkjær; Knott, Arnold

2018-01-01

Control loops have been used with switch-mode audio amplifiers to improve the sound quality of the amplifier. Because these amplifiers use a high-frequency modulation, precautions in the controller design must be taken. Further, the quality factor of the output filter can have a great impact...... on the controller's capabilities to suppress noise and track the audio signal. In this paper design methods for modern control are presented. The control method proves to easily overcome the challenge of designing a good performing controller when the output filter has a high quality factor. The results show...... that the controller is able to produce a clear improvement in the Total Harmonic Distortion with up to a 30 times improvement compared to open-loop with a clear reduction in the noise. This places the audio quality on pair with current solutions....

Design of a power amplifier for the LAMPF proton storage ring transverse damper system

International Nuclear Information System (INIS)

Lunsford, J.S.

1981-01-01

A power amplifier has been designed to drive the 50-Ω stripline deflection structures in the transverse active damper of the Los Alamos 800-MeV Proton Storage Ring (PSR). The unit will provide 600-V peak-to-peak with a dc-to-100-MHz bandwidth. Other important characteristics include < 40-ns delay time, 50-dB voltage gain, and 4-ns risetime with < 5% overshoot and ringing. Because of the current-drive properties of the amplifier, two amplifiers could be combined to provide over 1000-V peak-to-peak into 50 Ω, with very little bandwidth degradation. Components in the power amplifier that represent new designs are a 20-tube distributed-amplifier output stage; a driver stage, using VMOS FET and bipolar transistors; a high-voltage probe, with good dc stability and 150-MHz bandwidth; a transient suppressor circuit, using PIN diodes to protect the transistorized drivers from tube arcing; a nonlinear amplifier to compensate for the nonlinear characteristics of the distributed amplifier; and a first-fail indicator circuit to aid in locating the prime causes of equipment failures

Ferrite bead effect on Class-D amplifier audio quality

OpenAIRE

Haddad , Kevin El; Mrad , Roberto; Morel , Florent; Pillonnet , Gael; Vollaire , Christian; Nagari , Angelo

2014-01-01

International audience; This paper studies the effect of ferrite beads on the audio quality of Class-D audio amplifiers. This latter is a switch-ing circuit which creates high frequency harmonics. Generally, a filter is used at the amplifier output for the sake of electro-magnetic compatibility (EMC). So often, in integrated solutions, this filter contains ferrite beads which are magnetic components and present nonlinear behavior. Time domain measurements and their equivalence in frequency do...

An analog integrated front-end amplifier for neural applications

OpenAIRE

Zhou, Zhijun; Warr, Paul

2017-01-01

The front-end amplifier forms the critical element for signal detection and pre-processing within neural monitoring systems. It determines not only the fidelity of the biosignal, but also impacts power consumption and detector size. In this paper, a combined feedback loop-controlled approach is proposed to neutralize for the input leakage currents generated by low noise amplifiers when in integrated circuit form, alongside signal leakage into the input bias network. Significantly, this loop t...

Remote optically-tunable transimpedance amplifiers for quantum well diodes

Energy Technology Data Exchange (ETDEWEB)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V

1999-08-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed.

Remote optically-tunable transimpedance amplifiers for quantum well diodes

International Nuclear Information System (INIS)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V.

1999-01-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed

Self-amplifying autocrine actions of BDNF in axon development

OpenAIRE

Cheng, Pei-Lin; Song, Ai-Hong; Wong, Yu-Hui; Wang, Sheng; Zhang, Xiang; Poo, Mu-Ming

2011-01-01

A critical step in neuronal development is the formation of axon/dendrite polarity, a process involving symmetry breaking in the newborn neuron. Local self-amplifying processes could enhance and stabilize the initial asymmetry in the distribution of axon/dendrite determinants, but the identity of these processes remains elusive. We here report that BDNF, a secreted neurotrophin essential for the survival and differentiation of many neuronal populations, serves as a self-amplifying autocrine f...

Enhanced timing channel for spectroscopy amplifiers

Energy Technology Data Exchange (ETDEWEB)

Ianakiev, K; Grigorov, N [Inst. for Nuclear Research and Nuclear Energy, Sofia (Bulgaria)

1996-12-31

Purpose of this paper is to analyze noise and timing performance of some methods of filtering in the fast channel. Implementation of RLC-filter into a semi-Gaussian amplifier allows to obtain the time resolution of 420 ns. 5 refs.

Note: a transimpedance amplifier for remotely located quartz tuning forks.

Science.gov (United States)

Kleinbaum, Ethan; Csáthy, Gábor A

2012-12-01

The cable capacitance in cryogenic and high vacuum applications of quartz tuning forks imposes severe constraints on the bandwidth and noise performance of the measurement. We present a single stage low noise transimpedance amplifier with a bandwidth exceeding 1 MHz and provide an in-depth analysis of the dependence of the amplifier parameters on the cable capacitance.

High efficiency RF amplifier development over wide dynamic range for accelerator application

Science.gov (United States)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

On cuff imbalance and tripolar ENG amplifier configurations.

Science.gov (United States)

Triantis, Iasonas F; Demosthenous, Andreas; Donaldson, Nick

2005-02-01

Electroneurogram (ENG) recording techniques benefit from the use of tripolar cuffs because they assist in reducing interference from sources outside the cuff. However, in practice the performance of ENG amplifier configurations, such as the quasi-tripole and the true-tripole, has been widely reported to be degraded due to the departure of the tripolar cuff from ideal behavior. This paper establishes the presence of cuff imbalance and investigates its relationship to cuff asymmetry, cuff end-effects and interference source proximity. The paper also presents a comparison of the aforementioned amplifier configurations with a new alternative, termed the adaptive-tripole, developed to automatically compensate for cuff imbalance. The output signal-to-interference ratio of the three amplifier configurations were compared in vivo for two interference signals (stimulus artifact and M-wave) superimposed on compound action potentials. The experiments showed (for the first time) that the two interference signals result in different cuff imbalance values. Nevertheless, even with two distinct cuff imbalances present, the adaptive-tripole performed better than the other two systems in 61.9% of the trials.

Fiber optical parametric amplifiers in optical communication systems

Science.gov (United States)

Marhic (†), Michel E; Andrekson, Peter A; Petropoulos, Periklis; Radic, Stojan; Peucheret, Christophe; Jazayerifar, Mahmoud

2015-01-01

The prospects for using fiber optical parametric amplifiers (OPAs) in optical communication systems are reviewed. Phase-insensitive amplifiers (PIAs) and phase-sensitive amplifiers (PSAs) are considered. Low-penalty amplification at/or near 1 Tb/s has been achieved, for both wavelength- and time-division multiplexed formats. High-quality mid-span spectral inversion has been demonstrated at 0.64 Tb/s, avoiding electronic dispersion compensation. All-optical amplitude regeneration of amplitude-modulated signals has been performed, while PSAs have been used to demonstrate phase regeneration of phase-modulated signals. A PSA with 1.1-dB noise figure has been demonstrated, and preliminary wavelength-division multiplexing experiments have been performed with PSAs. 512 Gb/s have been transmitted over 6,000 km by periodic phase conjugation. Simulations indicate that PIAs could reach data rate x reach products in excess of 14,000 Tb/s × km in realistic wavelength-division multiplexed long-haul networks. Technical challenges remaining to be addressed in order for fiber OPAs to become useful for long-haul communication networks are discussed. PMID:25866588

SHIVA Nd: glass disk-amplifier-assembly facility and special purpose fixtures

International Nuclear Information System (INIS)

Jones, W.A.; Patton, H.G.; Stowers, I.F.; Wentworth, D.E.

1977-09-01

The facility built to assemble and maintain the laser amplifiers in the SHIVA Laser System is described. The facility is a Class-100 clean room which includes a high pressure solvent spray box, optical inspection equipment, and several unique amplifier-assembly fixtures

Pulse distortion, energy extraction, and ASE in an HF amplifier with angular multiplexing

International Nuclear Information System (INIS)

McGuire, E.J.

1976-09-01

It has been proposed that 1 ns pulses can be efficiently extracted from the e-beam initiated HF laser by angular multiplexing, i.e., filling the amplifier with the 1 ns pulses, 1 ns apart in time, each pulse at a slightly different angle; each pulse has an input intensity of 1 W/cm 2 per line and almost fills the amplifier. We have treated this in a one dimensional model, neglecting transverse amplified spontaneous emission. We conclude that the scheme is efficient, and that most of the pulses are amplified but not distorted. The first few pulses are distorted by transient effects and the last pulse has an enhanced tail. The ratio of peak pulse intensity to forward ASE at the output is 10 4 . We then include transverse ASE and find a drastically different situation. ASE saturates the inversion after a short time depending on pulse intensity (4 ns at I/sub o/ = 1 W/cm 2 , 7 ns at I/sub o/ = 100 W/cm 2 ). The saturation time is only weakly dependent on the transverse reflection coefficient. Calculations were done on an amplifier system designed for 10 KJ output. At an incident peak pulse intensity of 10 4 W/cm 2 -line (.77 MW/cm 2 for 77 lines) 2.5 KJ was obtained in amplified pulse energy, i.e., only 6 pulses of the 24 pulse train were fully amplified. The calculations indicate that double passing the pulse train through the amplifier would enhance the energy extracted

Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration

Science.gov (United States)

Albrodt, P.; Hanna, M.; Moron, F.; Decker, J.; Winterfeldt, M.; Blume, G.; Erbert, G.; Crump, P.; Georges, P.; Lucas-Leclin, G.

2018-02-01

Improved diode laser beam combining techniques are in strong demand for applications in material processing. Coherent beam combining (CBC) is the only combining approach that has the potential to maintain or even improve all laser properties, and thus has high potential for future systems. As part of our ongoing studies into CBC of diode lasers, we present recent progress in the coherent superposition of high-power single-pass tapered laser amplifiers. The amplifiers are seeded by a DFB laser at λ = 976 nm, where the seed is injected into a laterally single-mode ridge-waveguide input section. The phase pistons on each beam are actively controlled by varying the current in the ridge section of each amplifier, using a sequential hill-climbing algorithm, resulting in a combined beam with power fluctuations of below 1%. The currents into the tapered sections of the amplifiers are separately controlled, and remain constant. In contrast to our previous studies, we favour a limited number of individual high-power amplifiers, in order to preserve a high extracted power per emitter in a simple, low-loss coupling arrangement. Specifically, a multi-arm interferometer architecture with only three devices is used, constructed using 6 mm-long tapered amplifiers, mounted junction up on C-mounts, to allow separate contact to single mode and amplifier sections. A maximum coherently combined power of 12.9 W is demonstrated in a nearly diffraction-limited beam, corresponding to a 65% combining efficiency, with power mainly limited by the intrinsic beam quality of the amplifiers. Further increased combined power is currently sought.

Robust forests of vertically aligned carbon nanotubes chemically assembled on carbon substrates.

Science.gov (United States)

Garrett, David J; Flavel, Benjamin S; Shapter, Joseph G; Baronian, Keith H R; Downard, Alison J

2010-02-02

Forests of vertically aligned carbon nanotubes (VACNTs) have been chemically assembled on carbon surfaces. The structures show excellent stability over a wide potential range and are resistant to degradation from sonication in acid, base, and organic solvent. Acid-treated single-walled carbon nanotubes (SWCNTs) were assembled on amine-terminated tether layers covalently attached to pyrolyzed photoresist films. Tether layers were electrografted to the carbon substrate by reduction of the p-aminobenzenediazonium cation and oxidation of ethylenediamine. The amine-modified surfaces were incubated with cut SWCNTs in the presence of N,N'-dicyclohexylcarbodiimide (DCC), giving forests of vertically aligned carbon nanotubes (VACNTs). The SWCNT assemblies were characterized by scanning electron microscopy, atomic force microscopy, and electrochemistry. Under conditions where the tether layers slow electron transfer between solution-based redox probes and the underlying electrode, the assembly of VACNTs on the tether layer dramatically increases the electron-transfer rate at the surface. The grafting procedure, and hence the preparation of VACNTs, is applicable to a wide range of materials including metals and semiconductors.

Ways to suppress click and pop for class D amplifiers

International Nuclear Information System (INIS)

Wang Haishi; Zhang Bo; Sun Jiang

2012-01-01

Undesirable audio click and pop may be generated in a speaker or headphone. Compared to linear (class A/B/AB) amplifiers, class D amplifiers that comprise of an input stage and a modulation stage are more prone to producing click and pop. This article analyzes sources that generate click and pop in class D amplifiers, and corresponding ways to suppress them. For a class D amplifier with a single-ended input, click and pop is likely to be due to two factors. One is from a voltage difference (V DIF ) between the voltage of an input capacitance (V CIN ) and a reference voltage (V REF ) of the input stage, and the other one is from the non-linear switching during the setting up of the bias and feedback voltages/currents (BFVC) of the modulation stage. In this article, a fast charging loop is introduced into the input stage to charge V CIN to roughly near V REF . Then a correction loop further charges or discharges V CIN , substantially equalizing it with V REF . Dummy switches are introduced into the modulation stage to provide switching signals for setting up BFVC, and the power switches are disabled until the BFVC are set up successfully. A two channel single-ended class D amplifier with the above features is fabricated with 0.5 μm Bi-CMOS process. Road test and fast Fourier transform analysis indicate that there is no noticeable click and pop. (semiconductor integrated circuits)

Op-amp based low noise amplifier for magnetic particle spectroscopy

Directory of Open Access Journals (Sweden)

Malhotra Ankit

2017-09-01

Full Text Available Magnetic particle spectrometry (MPS is a novel technique used to measure the magnetization response of superparamagnetic iron oxide nanoparticles (SPIONs. Therefore, it is one of the most important tools for the characterization of the SPIONs for imaging modalities such as magnetic particle imaging (MPI and Magnetic Resonance Imaging (MRI. In MPS, change in the particle magnetization induces a voltage in a dedicated receive coil. The amplitude of the signal can be very low (ranging from a few nV to 100 μV depending upon the concentration of the nanoparticles. Hence, the received signal needs to be amplified with a low noise amplifier (LNA. LNA’s paramount task is to amplify the received signal while keeping the noise induced by its own circuitry minimum. In the current research, we purpose modeling, design, and development of a prototyped LNA for MPS. The designed prototype LNA is based on the parallelization technique of Op-amps. The prototyped LNA consists of 16 Op-amps in parallel and is manufactured on a printed circuit board (PCB, with a size of 110.38 mm × 59.46 mm and 234 components. The input noise of the amplifier is approx. 546 pV/√Hz with a noise figure (NF of approx. 1.4 dB with a receive coil termination. Furthermore, a comparison between the prototyped LNA and a commercially available amplifier is shown.

Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

Energy Technology Data Exchange (ETDEWEB)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

2014-10-15

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Ways to suppress click and pop for class D amplifiers

Science.gov (United States)

Haishi, Wang; Bo, Zhang; Jiang, Sun

2012-08-01

Undesirable audio click and pop may be generated in a speaker or headphone. Compared to linear (class A/B/AB) amplifiers, class D amplifiers that comprise of an input stage and a modulation stage are more prone to producing click and pop. This article analyzes sources that generate click and pop in class D amplifiers, and corresponding ways to suppress them. For a class D amplifier with a single-ended input, click and pop is likely to be due to two factors. One is from a voltage difference (VDIF) between the voltage of an input capacitance (VCIN) and a reference voltage (VREF) of the input stage, and the other one is from the non-linear switching during the setting up of the bias and feedback voltages/currents (BFVC) of the modulation stage. In this article, a fast charging loop is introduced into the input stage to charge VCIN to roughly near VREF. Then a correction loop further charges or discharges VCIN, substantially equalizing it with VREF. Dummy switches are introduced into the modulation stage to provide switching signals for setting up BFVC, and the power switches are disabled until the BFVC are set up successfully. A two channel single-ended class D amplifier with the above features is fabricated with 0.5 μm Bi-CMOS process. Road test and fast Fourier transform analysis indicate that there is no noticeable click and pop.

The design of a 4’th order Bandpass Butterworth filter with one operational amplifier.

OpenAIRE

Gaunholt, Hans

2008-01-01

A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: ωt/s where ωt is the unity gain fre-quency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity gain amplifier. The unity gain amplifiers have the advantage of providing low power consumption, y...

Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

Science.gov (United States)

Wood, Hannah M; Parkinson, Dilworth Y; Griswold, Charles E; Gillespie, Rosemary G; Elias, Damian O

2016-04-25

Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for several ant genera [5, 8], which have evolved some of the fastest known movements in the animal kingdom [6]. However, power-amplified predatory strikes were not previously known in one of the largest animal classes, the arachnids. Mecysmaucheniidae spiders, which occur only in New Zealand and southern South America, are tiny, cryptic, ground-dwelling spiders that rely on hunting rather than web-building to capture prey [9]. Analysis of high-speed video revealed that power-amplified mechanisms occur in some mecysmaucheniid species, with the fastest species being two orders of magnitude faster than the slowest species. Molecular phylogenetic analysis revealed that power-amplified cheliceral strikes have evolved four times independently within the family. Furthermore, we identified morphological innovations that directly relate to cheliceral function: a highly modified carapace in which the cheliceral muscles are oriented horizontally; modification of a cheliceral sclerite to have muscle attachments; and, in the power-amplified species, a thicker clypeus and clypeal apodemes. These structural innovations may have set the stage for the parallel evolution of ballistic predatory strikes. Copyright © 2016 Elsevier Ltd. All rights reserved.

Portable Amplifier Design for a Novel EEG Monitor in Point-of-Care Applications.

Science.gov (United States)

Luan, Bo; Sun, Mingui; Jia, Wenyan

2012-01-01

The Electroencephalography (EEG) is a common diagnostic tool for neurological diseases and dysfunctions, such as epilepsy and insomnia. However, the current EEG technology cannot be utilized quickly and conveniently at the point of care due to the complex skin preparation procedures required and the inconvenient EEG data acquisition systems. This work presents a portable amplifier design that integrates a set of skin screw electrodes and a wireless data link. The battery-operated amplifier contains an instrumentation amplifier, two noninverting amplifiers, two high-pass filters, and a low-pass filter. It is able to magnify the EEG signals over 10,000 times and has a high impedance, low noise, small size and low weight. Our electrode and amplifier are ideal for point-of-care applications, especially during transportation of patients suffering from traumatic brain injury or stroke.

Cathode-follower power amplifier

International Nuclear Information System (INIS)

Giordano, S.; Puglisi, M.

1983-01-01

In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

High-Performance Operational and Instrumentation Amplifiers

NARCIS (Netherlands)

Shahi, B.

2015-01-01

This thesis describes techniques to reduce the offset error in precision instrumentation and operational amplifiers. The offset error which is considered a major error source associated with gain blocks, together with other errors are reviewed. Conventional and newer approaches to remove offset and

A High-Voltage Class D Audio Amplifier for Dielectric Elastomer Transducers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

Dielectric Elastomer (DE) transducers have emerged as a very interesting alternative to the traditional electrodynamic transducer. Lightweight, small size and high maneuverability are some of the key features of the DE transducer. An amplifier for the DE transducer suitable for audio applications...... is proposed and analyzed. The amplifier addresses the issue of a high impedance load, ensuring a linear response over the midrange region of the audio bandwidth (100 Hz – 3.5 kHz). THD+N below 0.1% are reported for the ± 300 V prototype amplifier producing a maximum of 125 Var at a peak efficiency of 95 %....

An amplifier for VUV photomultiplier operating in cryogenic environment

International Nuclear Information System (INIS)

Arneodo, F.; Benabderrahmane, M.L.; Dahal, S.; Di Giovanni, A.; D'Inzeo, M.; Franchi, G.; Pazos Clemens, L.

2016-01-01

We present the characterisation of an amplifier potentially interesting for noble liquid detectors. The design has been conceived considering the requirements of low power consumption (less than 30 mW), low noise, amplification factor of 10 at 100 MHz and use of commercial components. The amplifier has been integrated onto an electronic board with a voltage divider to operate an Hamamatsu R11410 photomultiplier tube (used in XENON1T, Aprile et al. (2014) [1] dark matter experiment).

An amplifier for VUV photomultiplier operating in cryogenic environment

Energy Technology Data Exchange (ETDEWEB)

Arneodo, F.; Benabderrahmane, M.L.; Dahal, S. [New York University Abu Dhabi, Abu Dhabi (United Arab Emirates); Di Giovanni, A., E-mail: adriano.digiovanni@nyu.edu [New York University Abu Dhabi, Abu Dhabi (United Arab Emirates); D' Inzeo, M.; Franchi, G. [Age Scientific srl – Capezzano Pianore (Italy); Pazos Clemens, L. [New York University Abu Dhabi, Abu Dhabi (United Arab Emirates)

2016-07-11

We present the characterisation of an amplifier potentially interesting for noble liquid detectors. The design has been conceived considering the requirements of low power consumption (less than 30 mW), low noise, amplification factor of 10 at 100 MHz and use of commercial components. The amplifier has been integrated onto an electronic board with a voltage divider to operate an Hamamatsu R11410 photomultiplier tube (used in XENON1T, Aprile et al. (2014) [1] dark matter experiment).

Size-amplified acoustofluidic separation of circulating tumor cells with removable microbeads

Science.gov (United States)

Liu, Huiqin; Ao, Zheng; Cai, Bo; Shu, Xi; Chen, Keke; Rao, Lang; Luo, Changliang; Wang, Fu-Bin; Liu, Wei; Bondesson, Maria; Guo, Shishang; Guo, Feng

2018-06-01

Isolation and analysis of rare circulating tumor cells (CTCs) is of great interest in cancer diagnosis, prognosis, and treatment efficacy evaluation. Acoustofluidic cell separation becomes an attractive method due to its contactless, noninvasive, simple, and versatile features. However, the indistinctive physical difference between CTCs and normal blood cells limits the purity of CTCs using current acoustic methods. Herein, we demonstrate a size-amplified acoustic separation and release of CTCs with removable microbeads. CTCs selectively bound to size-amplifiers (40 μm-diameter anti-EpCAM/gelatin-coated SiO2 microbeads) have significant physical differences (size and mechanics) compared to normal blood cells, resulting in an amplification of acoustic radiation force approximately a hundredfold over that of bare CTCs or normal blood cells. Therefore, CTCs can be efficiently sorted out with size-amplifiers in a traveling surface acoustic wave microfluidic device and released from size-amplifiers by enzymatic degradation for further purification or downstream analysis. We demonstrate a cell separation from blood samples with a total efficiency (E total) of ∼ 77%, purity (P) of ∼ 96%, and viability (V) of ∼83% after releasing cells from size-amplifiers. Our method substantially improves the emerging application of rare cell purification for translational medicine.

Design and Development of Advanced Lock-in Amplifier and its Application

Directory of Open Access Journals (Sweden)

Bhagyajyothi

2013-06-01

Full Text Available Lock-in amplifiers are used to process the analog signals even in the presence of noise sources of greater amplitude. In the present study, an attempt is made to design a C8051F060 microcontroller based lock-in amplifier. The microcontroller contains all the on-chip features to design a single-chip lock-in amplifier. The reference signal for lock-in amplifier is generated by on-chip digital-to-analog converter (DAC and timer. The signal whose amplitude is to be measured is acquired by on-chip ADC. The ADC values are directly stored on to XRAM through on-chip DMA controller. Later, these stored values are processed by using quadrature sampling method to get amplitude and phase of the 100 waves. The amplitude and phase values of 100 waves are averaged to eliminate the random noise of the signal and are displayed on the LCD module. The amplitude and phase are sent to the PC through on-chip serial port (UART to store/plot the graph. The proposed lock-in amplifier is applied to study the phase transitions of sulfur sample by varying the temperature at slow rate (0.3 °C/min using microcontroller based temperature control system.

FDML swept source at 1060 nm using a tapered amplifier

DEFF Research Database (Denmark)

Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

2010-01-01

We present a novel frequency-swept light source working at 1060nm that utilizes a tapered amplifier as gain medium. These devices feature significantly higher saturation power than conventional semiconductor optical amplifiers and can thus improve the limited output power of swept sources in this...... an axial resolution of 15 µm in air (~11µm in tissue) for OCT applications can be achieved....

Slow Light at High Frequencies in an Amplifying Semiconductor Waveguide

DEFF Research Database (Denmark)

Öhman, Filip; Yvind, Kresten; Mørk, Jesper

2006-01-01

We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz.......We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz....

Active rc filter permits easy trade-off of amplifier gain and sensitivity to gain

Science.gov (United States)

Kerwin, W. J.; Shaffer, C. V.

1968-01-01

Passive RC network was designed with zeros of transmission in the right half of the complex frequency plane in the feedback loop of a simple negative-gain amplifier. The proper positioning provides any desired trade-off between amplifier gain and sensitivity to amplifier gain.

Low-noise wide-band amplifiers for stochastic beam cooling experiments

International Nuclear Information System (INIS)

Leskovar, B.; Lo, C.C.

1982-01-01

Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35 0 K at ambient temperature of 20 0 K. An analysis of preamplifier stability based on scattering parameters concept is included

High sensitivity amplifier/discriminator for PWC's

International Nuclear Information System (INIS)

Hansen, S.

1983-01-01

The facility support group at Fermilab is designing and building a general purpose beam chamber for use in several locations at the laboratory. This pwc has 128 wires per plane spaced 1 mm apart. An initial production of 25 signal planes is anticipated. In proportional chambers, the size of the signal depends exponentially on the charge stored per unit of length along the anode wire. As the wire spacing decreases, the capacitance per unit length decreases, thereby requiring increased applied voltage to restore the necessary charge per unit length. In practical terms, this phenomenon is responsible for difficulties in constructing chambers with less than 2 mm wire spacing. 1 mm chambers, therefore, are frequently operated very near to their breakdown point and/or a high gain gas containing organic compounds such as magic gas is used. This argon/iso-butane mixture has three drawbacks: it is explosive when exposed to the air, it leaves a residue on the wires after extended use and is costly. An amplifier with higher sensitivity would reduce the problems associated with operating chambers with small wire spacings and allow them to be run a safe margin below their breakdown voltage even with an inorganic gas mixture such as argon/CO2, this eliminating the need to use magic gas. Described here is a low cost amplifier with a usable threshold of less than 0.5 μA. Data on the performance of this amplifier/discriminator in operation on a prototype beam chamber are given. This data shows the advantages of the high sensitivity of this design

First operation of a wiggler-focused, sheet beam free electron laser amplifier

International Nuclear Information System (INIS)

Destler, W.W.; Cheng, S.; Zhang, Z.X.; Antonsen, T.M. Jr.; Granatstein, V.L.; Levush, B.; Rodgers, J.

1994-01-01

A wiggler-focused, sheet beam free electron laser (FEL) amplifier utilizing a short-period wiggler magnet has been proposed as a millimeter-wave source for current profile modification and/or electron cyclotron resonance heating of tokamak plasmas. As proposed, such an amplifier would operate at a frequency of approximately 100--200 GHz with an output power of 1--10 MW CW. Electron beam energy would be in the range 500--1000 keV. To test important aspects of this concept, an initial sheet beam FEL amplifier experiment has been performed using a 1 mmx2 cm sheet beam produced by a pulse line accelerator with a pulse duration of 100 ns. The 500--570 keV, 4--18 A sheet beam is propagated through a 56 period uniform wiggler (λ w =9.6 mm) with a peak wiggler amplitude of 2--5 kG. Linear amplification of a 5--10 W, 94 GHz signal injected in the TE 01 rectangular mode is observed. All features of the amplified signal, including pulse shape and duration, are in accordance with the predictions of numerical simulation. Amplified signal gain has been measured as a function of injected beam energy, current, and wiggler field amplitude and is also in good agreement with simulation results. Continuation of this experiment will involve studying nonlinear amplifier operation and adding a section of tapered wiggler

Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers

DEFF Research Database (Denmark)

Lester, Christian; Bjarklev, Anders Overgaard; Rasmussen, Thomas

1995-01-01

A model for Yb3+-sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths...

Colorimetric Detection of Specific DNA Segments Amplified by Polymerase Chain Reactions

Science.gov (United States)

Kemp, David J.; Smith, Donald B.; Foote, Simon J.; Samaras, N.; Peterson, M. Gregory

1989-04-01

The polymerase chain reaction (PCR) procedure has many potential applications in mass screening. We describe here a general assay for colorimetric detection of amplified DNA. The target DNA is first amplified by PCR, and then a second set of oligonucleotides, nested between the first two, is incorporated by three or more PCR cycles. These oligonucleotides bear ligands: for example, one can be biotinylated and the other can contain a site for a double-stranded DNA-binding protein. After linkage to an immobilized affinity reagent (such as a cloned DNA-binding protein, which we describe here) and labeling with a second affinity reagent (for example, avidin) linked to horseradish peroxidase, reaction with a chromogenic substrate allows detection of the amplified DNA. This amplified DNA assay (ADA) is rapid, is readily applicable to mass screening, and uses routine equipment. We show here that it can be used to detect human immunodeficiency virus sequences specifically against a background of human DNA.

A simplified digital lock-in amplifier for the scanning grating spectrometer.

Science.gov (United States)

Wang, Jingru; Wang, Zhihong; Ji, Xufei; Liu, Jie; Liu, Guangda

2017-02-01

For the common measurement and control system of a scanning grating spectrometer, the use of an analog lock-in amplifier requires complex circuitry and sophisticated debugging, whereas the use of a digital lock-in amplifier places a high demand on the calculation capability and storage space. In this paper, a simplified digital lock-in amplifier based on averaging the absolute values within a complete period is presented and applied to a scanning grating spectrometer. The simplified digital lock-in amplifier was implemented on a low-cost microcontroller without multipliers, and got rid of the reference signal and specific configuration of the sampling frequency. Two positive zero-crossing detections were used to lock the phase of the measured signal. However, measurement method errors were introduced by the following factors: frequency fluctuation, sampling interval, and integer restriction of the sampling number. The theoretical calculation and experimental results of the signal-to-noise ratio of the proposed measurement method were 2055 and 2403, respectively.

The spectacular human nose: an amplifier of individual quality?

Directory of Open Access Journals (Sweden)

Åse Kristine Rognmo Mikalsen

2014-04-01

Full Text Available Amplifiers are signals that improve the perception of underlying differences in quality. They are cost free and advantageous to high quality individuals, but disadvantageous to low quality individuals, as poor quality is easier perceived because of the amplifier. For an amplifier to evolve, the average fitness benefit to the high quality individuals should be higher than the average cost for the low quality individuals. The human nose is, compared to the nose of most other primates, extraordinary large, fragile and easily broken—especially in male–male interactions. May it have evolved as an amplifier among high quality individuals, allowing easy assessment of individual quality and influencing the perception of attractiveness? We tested the latter by manipulating the position of the nose tip or, as a control, the mouth in facial pictures and had the pictures rated for attractiveness. Our results show that facial attractiveness failed to be influenced by mouth manipulations. Yet, facial attractiveness increased when the nose tip was artificially centered according to other facial features. Conversely, attractiveness decreased when the nose tip was displaced away from its central position. Our results suggest that our evaluation of attractiveness is clearly sensitive to the centering of the nose tip, possibly because it affects our perception of the face’s symmetry and/or averageness. However, whether such centering is related to individual quality remains unclear.

Investigation of switching frequency variations and EMI properties in self-oscillating class D amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in these amplifiers is self-oscillation. A parameter of key interest in self-oscillating amplifiers is the switching frequency, which is kno...

Reducing Switching Artifacts in Chopper Amplifiers

NARCIS (Netherlands)

Kusuda, Y.

2018-01-01

This thesis describes the theory, design, and implementation of chopper operational amplifiers (op-amps) in CMOS integrated circuits (ICs). The chopping technique periodically corrects DC errors of such op-amps, so that low 1/f noise and stable, microvolt-level offset can be achieved. However,

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

Patterned forests of vertically-aligned multiwalled carbon nanotubes using metal salt catalyst solutions.

Science.gov (United States)

Garrett, David J; Flavel, Benjamin S; Baronian, Keith H R; Downard, Alison J

2013-01-01

A simple method for producing patterned forests of multiwalled carbon nanotubes (MWCNTs) is described. An aqueous metal salt solution is spin-coated onto a substrate patterned with photoresist by standard methods. The photoresist is removed by acetone washing leaving the acetone-insoluble catalyst pattern on the substrate. Dense forests of vertically aligned (VA) MWCNTs are grown on the patterned catalyst layers by chemical vapour deposition. The procedures have been demonstrated by growing MWCNT forests on two substrates: silicon and conducting graphitic carbon films. The forests adhere strongly to the substrates and when grown directly on carbon film, offer a simple method of preparing MWCNT electrodes.

Design, construction and test of RF solid state power amplifier for IRANCYC-10

Science.gov (United States)

Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

2018-03-01

In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

Pulse propagation in a two-pass optical amplifier with arbitrary laser beams overlap

Directory of Open Access Journals (Sweden)

AH Farahbod

2011-09-01

Full Text Available An analytical model for two-pass optical amplifier with arbitrary beams overlap has been developed which generalized the classical theory of Frantz-Nodvik for single pass amplifier. The effect of counterpropagating beams on gain and output energy fluence included in the model. Moreover, the appropriate limiting relations for two special cases of weak input signal and saturation state of the amplifier gain have been derived. The results indicate that for complete beams overlap, the gain and output energy have the least values. The model predictions are consistent with experimental observations and exact analytical model for two-pass amplifier when beam propagation paths are coincided.

Constant Switching Frequency Self-Oscillating Controlled Class-D Amplifiers

OpenAIRE

Nguyen-Duy, Khiem; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

The self-oscillating control approach has been used extensively in class-D amplifiers. It has several advantages such as high bandwidth and high audio performance. However, one of the primary disadvantages in a self-oscillating controlled system is that the switching frequency of the amplifier varies with the ratio of the output voltage to the input rail voltage. In other words, the switching frequency varies with the duty cycle of the output. The drop in the frequency results in lower contro...

100J-level nanosecond pulsed Yb:YAG cryo-cooled DPSSL amplifier

Science.gov (United States)

Smith, J. M.; Butcher, T. J.; Mason, P. D.; Ertel, K.; Phillips, P. J.; Banerjee, S.; De Vido, M.; Chekhlov, O.; Divoky, M.; Pilar, J.; Shaikh, W.; Hooker, C.; Lucianetti, A.; Hernandez Gomez, C.; Mocek, T.; Edwards, C.; Collier, J. L.

2018-02-01

We report on the successful demonstration of the world's first kW average power, 100 Joule-class, high-energy, nanosecond pulsed diode-pumped solid-state laser (DPSSL), DiPOLE100. Results from the first long-term test for amplification will be presented; the system was operated for 1 hour with 10 ns duration pulses at 10 Hz pulse repetition rate and an average output energy of 105 J and RMS energy stability of approximately 1%. The laser system is based on scalable cryogenic gas-cooled multi-slab ceramic Yb:YAG amplifier technology. The DiPOLE100 system comprises three major sub-systems, a spatially and temporally shaped front end, a 10 J cryo-amplifier and a 100 J cryo-amplifier. The 10 J cryo-amplifier contain four Yb:YAG ceramic gain media slabs, which are diode pumped from both sides, while a multi-pass architecture configured for seven passes enables 10 J of energy to be extracted at 10 Hz. This seeds the 100 J cryo-amplifier, which contains six Yb:YAG ceramic gain media slabs with the multi-pass configured for four passes. Our future development plans for this architecture will be introduced including closed-loop pulse shaping, increased energy, higher repetition rates and picosecond operation. This laser architecture unlocks the potential for practical applications including new sources for industrial materials processing and high intensity laser matter studies as envisioned for ELI [1], HiLASE [2], and the European XFEL [3]. Alternatively, it can be used as a pump source for higher repetition rate PW-class amplifiers, which can themselves generate high-brightness secondary radiation and ion sources leading to new remote imaging and medical applications.

Digital lock-in amplifier based on soundcard interface for physics laboratory

Science.gov (United States)

Sinlapanuntakul, J.; Kijamnajsuk, P.; Jetjamnong, C.; Chotikaprakhan, S.

2017-09-01

The purpose of this paper is to develop a digital lock-in amplifier based on soundcard interface for undergraduate physics laboratory. Both series and parallel RLC circuit laboratory are tested because of its well-known, easy to understand and simple confirm. The sinusoidal signal at the frequency of 10 Hz - 15 kHz is generated to the circuits. The amplitude and phase of the voltage drop across the resistor, R are measured in 10 step decade. The signals from soundcard interface and lock-in amplifier are compared. The results give a good correlation. It indicates that the design digital lock-in amplifier is promising for undergraduate physic laboratory.

Solid state high power amplifier for driving the SLC injector klystron

International Nuclear Information System (INIS)

Judkins, J.G.; Clendenin, J.E.; Schwarz, H.D.

1985-03-01

The SLC injector klystron rf drive is now provided by a recently developed solid-state amplifier. The high gain of the amplifier permits the use of a fast low-power electronic phase shifter. Thus the SLC computer control system can be used to shift the phase of the high-power rf rapidly during the fill time of the injector accelerator section. These rapid phase shifts are used to introduce a phase-energy relationship in the accelerated electron pulse in conjunction with the operation of the injector bunch compressor. The amplifier, the method of controlling the rf phase, and the operational characteristics of the system are described. 5 refs., 4 figs

Entanglement-based linear-optical qubit amplifier

Czech Academy of Sciences Publication Activity Database

Meyer-Scott, E.; Bula, M.; Bartkiewicz, K.; Černoch, Antonín; Soubusta, Jan; Jennewein, T.; Lemr, Karel

2013-01-01

Roč. 87, č. 1 (2013), "012327-1"-"012327-7" ISSN 1050-2947 R&D Projects: GA ČR GAP205/12/0382 Institutional support: RVO:68378271 Keywords : quantum physics * photonics qubits * qubit amplifier Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.991, year: 2013

Amplifiers with ground-isolated inputs and outputs

International Nuclear Information System (INIS)

Da Costa Vieira, David; Merite, Bernard; Tattegrain, Alain

1969-06-01

The amplifiers described in this note aim at ensuring a connection between different apparatuses with grounds being at a different potential. They will be inserted in the measurement channels of the Cabri reactor

High Efficiency S-Band 20 Watt Amplifier

Data.gov (United States)

National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

Trial manufacture of an insulated amplifier

International Nuclear Information System (INIS)

Okuno, Shigeo; Matsuura, Kiyokata.

1978-10-01

Trial manufacture of an insulated amplifier was carried out. The input signals are divided by filters Th and Tl into high frequency component and low frequency component. The high frequency component drives a transformer T 1 , and secondary signals are induced. The low frequency component drives a transformer T 2 through a buffer and a modulator. The secondary signals from both transformers are recombined to make the output signals. Compensation for the frequency characteristics of the high frequency transformer and that for the effect of a filter in the demodulation circuit for low frequency component are considered. The time constant of output signals for rectangular input signals was 30 microsec, when only the low frequency part is operated. The drift of the direct current level is within 5 mV. The characteristic features of the high frequency part was also investigated. The overall characteristic features of this amplifier were good for the frequency range of 0 to 500 kHz. (Kato, T.)

Chaotic amplification of neutrino chemical potentials by neutrino oscillations in big bang nucleosynthesis

International Nuclear Information System (INIS)

Shi, X.

1996-01-01

We investigate in detail the parameter space of active-sterile neutrino oscillations that amplifies neutrino chemical potentials at the epoch of big bang nucleosynthesis. We calculate the magnitude of the amplification and show evidence of chaos in the amplification process. We also discuss the implications of the neutrino chemical potential amplification in big bang nucleosynthesis. It is shown that with a ∼1 eV ν e , the amplification of its chemical potential by active-sterile neutrino oscillations can lower the effective number of neutrino species at big bang nucleosynthesis to significantly below three. copyright 1996 The American Physical Society

Chaotic amplification of neutrino chemical potentials by neutrino oscillations in big bang nucleosynthesis

Energy Technology Data Exchange (ETDEWEB)

Shi, X. [Department of Physics, Queen`s University, Kingston, Ontario, K7L 3N6 (CANADA)

1996-08-01

We investigate in detail the parameter space of active-sterile neutrino oscillations that amplifies neutrino chemical potentials at the epoch of big bang nucleosynthesis. We calculate the magnitude of the amplification and show evidence of chaos in the amplification process. We also discuss the implications of the neutrino chemical potential amplification in big bang nucleosynthesis. It is shown that with a {approximately}1 eV {nu}{sub {ital e}}, the amplification of its chemical potential by active-sterile neutrino oscillations can lower the effective number of neutrino species at big bang nucleosynthesis to significantly below three. {copyright} {ital 1996 The American Physical Society.}

Stability investigation for InP DHBT mm‐wave power amplifier

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

2013-01-01

microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

CMOS 60-GHz and E-band power amplifiers and transmitters

CERN Document Server

Zhao, Dixian

2015-01-01

This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Amplifier channel for a fission fragment semiconductor detector

International Nuclear Information System (INIS)

Tyurin, G.P.

1981-01-01

To compensate the decrease of the transformation coefficient of fission fragment semiconductor detector (SCD) developed is a special amplification channel with controlled transfer coefficient. The block diagram of the channel is presented, the main functional units of which are as follows: preamplifying head with charge-sensitive and timing preamplifiers, linear amplifier and the circuit of spectrum position stabilization, which includes a differential discriminator, integrator and reference signal generator. The amplification channel is made in the CAMAC standard and has the following specifications: dinamical input capacitance of charge-sensitive amplifier c=10000 n PHI, signal amplitude at output of the linear amplifier at energy of fission fragments of 120 MeV has negative polarity and is equal to 5 V. Pulse amplitude change at SCD sensitivity decrease to 50% constitutes not more than 1%. Timing preamplifier has the gain factor at voltage of K=80 at front duration of 3.5 nc. Time resolution of the amplification channel is not worse than 1 nc. Dimensions of preamplifying head are 40x40x15 mm. The amplification channel permitted to use SCD for long-term measurements of fission fragment spectra [ru

A Kinetics Model for KrF Laser Amplifiers

Science.gov (United States)

Giuliani, J. L.; Kepple, P.; Lehmberg, R.; Obenschain, S. P.; Petrov, G.

1999-11-01

A computer kinetics code has been developed to model the temporal and spatial behavior of an e-beam pumped KrF laser amplifier. The deposition of the primary beam electrons is assumed to be spatially uniform and the energy distribution function of the nascent electron population is calculated to be near Maxwellian below 10 eV. For an initial Kr/Ar/F2 composition, the code calculates the densities of 24 species subject to over 100 reactions with 1-D spatial resolution (typically 16 zones) along the longitudinal lasing axis. Enthalpy accounting for each process is performed to partition the energy into internal, thermal, and radiative components. The electron as well as the heavy particle temperatures are followed for energy conservation and excitation rates. Transport of the lasing photons is performed along the axis on a dense subgrid using the method of characteristics. Amplified spontaneous emission is calculated using a discrete ordinates approach and includes contributions to the local intensity from the whole amplifier volume. Specular reflection off side walls and the rear mirror are included. Results of the model will be compared with data from the NRL NIKE laser and other published results.

A megajoule class krypton fluoride amplifier for single shot, high gain ICF application

International Nuclear Information System (INIS)

Rose, E.; Hanson, D.; Krohn, B.; McLeod, J.; Kang, M.

1988-01-01

A design study is underway to define the optimal architecture for a KrF laser system which will deliver 10 MJ of 248-nm light to an ICF target. We present one approach which incorporates final power amplifiers in the megajoule class, achieving 10 MJ with four final amplifiers. Each double-pass laser amplifier employs two-sided electron-beam pumping of the laser gas medium. Details of the design are based on a Monte-Carlo electron-beam deposition code, a one-dimensional, time-dependent kinetics code, and pulsed power circuit modeling. Linear dimensions of the amplifier's extracted gain volume are 6.25 m in height and length and 5.12 m in width. Each amplifier handles 160 angularly multiplexed laser channels. The one-amagat, krypton-rich laser medium is e-beam pumped at 60-kW cm/sup /minus/3/ (4-MA at3.3-MV) over the 2-microsecond duration of the laser beam pulse train. 5 refs., 4 figs

High brightness photonic lantern kW-class amplifier

Science.gov (United States)

Montoya, Juan; Hwang, Chris; Aleshire, Chris; Reed, Patricia; Martz, Dale; Riley, Mike; Trainor, Michael; Belley, Catherine; Shaw, Scot; Fan, T. Y.; Ripin, Dan

2018-02-01

Pump-limited kW-class operation in a multimode fiber amplifier using adaptive mode control was achieved. A photonic lantern front end was used to inject an arbitrary superposition of modes on the input to a kW-class fiber amplifier to achieve a nearly diffraction-limited output. We report on the adaptive spatial mode control architecture which allows for compensating transverse-mode disturbances at high power. We also describe the advantages of adaptive spatial mode control for optical phased array systems. In particular, we show that the additional degrees of freedom allow for broader steering and improved atmospheric turbulence compensation relative to piston-only optical phased arrays.

X-ray image amplifying tube

International Nuclear Information System (INIS)

1977-01-01

The photo electrons from the picture on the fluorescent input screen are amplified by an electron optical system and produce an intensified image on the output screen. This can be photographed and shown on a TV screen. The effects of stray magnetic fields are reduced by covering the input screen with a grating made of strips of ferromagnetic material such as μ metal. (T.S.E.T.)

Amplified music exposure carries risks to hearing.

Science.gov (United States)

da Silva, Valéria Gomes; de Oliveira, Carlos Augusto Costa Pires; Tauil, Pedro Luíz; de Castro Silva, Isabella Monteiro; Sampaio, André Luiz Lopes

2017-02-01

To investigate the association between changes in the outer hair cells and exposure to amplified music in a group of high-school students. In this retrospective, case-control study, 86 subjects underwent audiometry, immittance audiometry, and distortion-product otoacoustic emission tests. The subjects were questioned about their listening habits and divided into 2 groups: exposed and unexposed. Most of the subjects had reduced function in their outer hair cells, mainly beginning at 8 kHz. Among 60 subjects-30 cases and 30 controls-75% were considered exposed and 25% unexposed. The exposed subjects were 9.33 times more likely to have altered outer hair cells than the unexposed subjects were. Exposure to amplified music is associated with reduced function in the hair cells. Copyright © 2017 Elsevier Ireland Ltd. All rights reserved.

State-dependent linear-optical qubit amplifier

Czech Academy of Sciences Publication Activity Database

Bartkiewicz, K.; Černoch, Antonín; Lemr, K.

2013-01-01

Roč. 88, č. 6 (2013), "062304-1"-"062304-7" ISSN 1050-2947 R&D Projects: GA ČR GAP205/12/0382 Institutional support: RVO:68378271 Keywords : linear-optical qubit amplifier * quantum cloning * quantum cryptography Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.991, year: 2013

Metal-amplified Density Assays, (MADAs), including a Density-Linked Immunosorbent Assay (DeLISA).

Science.gov (United States)

Subramaniam, Anand Bala; Gonidec, Mathieu; Shapiro, Nathan D; Kresse, Kayleigh M; Whitesides, George M

2015-02-21

This paper reports the development of Metal-amplified Density Assays, or MADAs - a method of conducting quantitative or multiplexed assays, including immunoassays, by using Magnetic Levitation (MagLev) to measure metal-amplified changes in the density of beads labeled with biomolecules. The binding of target analytes (i.e. proteins, antibodies, antigens) to complementary ligands immobilized on the surface of the beads, followed by a chemical amplification of the binding in a form that results in a change in the density of the beads (achieved by using gold nanoparticle-labeled biomolecules, and electroless deposition of gold or silver), translates analyte binding events into changes in density measureable using MagLev. A minimal model based on diffusion-limited growth of hemispherical nuclei on a surface reproduces the dynamics of the assay. A MADA - when performed with antigens and antibodies - is called a Density-Linked Immunosorbent Assay, or DeLISA. Two immunoassays provided a proof of principle: a competitive quantification of the concentration of neomycin in whole milk, and a multiplexed detection of antibodies against Hepatitis C virus NS3 protein and syphilis T. pallidum p47 protein in serum. MADAs, including DeLISAs, require, besides the requisite biomolecules and amplification reagents, minimal specialized equipment (two permanent magnets, a ruler or a capillary with calibrated length markings) and no electrical power to obtain a quantitative readout of analyte concentration. With further development, the method may be useful in resource-limited or point-of-care settings.

Very fast, high peak-power, planar triode amplifiers for driving optical gates

International Nuclear Information System (INIS)

Howland, M.M.; Davis, S.J.; Gagnon, W.L.

1979-01-01

Recent extensions of the peak power capabilities of planar triodes have made possible the latter's use as very fast pulse amplifiers, to drive optical gates within high-power Nd:glass laser chains. These pulse amplifiers switch voltages in the 20 kV range with rise times of a few nanoseconds, into crystal optical gates that are essentially capacitive loads. This paper describes a simplified procedure for designing these pulse amplifiers. It further outlines the use of bridged-T constant resistance networks to transform load capacitance into pure resistance, independent of frequency

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

Suppression of Gain Ripples in Superconducting Traveling-Wave Kinetic Inductance Amplifiers

Science.gov (United States)

Bal, Mustafa; Erickson, Robert P.; Ku, Hsiang Sheng; Wu, Xian; Pappas, David P.

Superconducting traveling-wave kinetic inductance (KIT) amplifiers demonstrated gain over a wide bandwidth with high dynamic range and low noise. However, the gain curve exhibits ripples. Impedance mismatch at the input and output ports of the KIT amplifier as wells as split ground planes of the coplanar waveguide (CPW) geometry are potential contributors to the ripple in the gain curve. Here we study the origin of these ripples in KIT amplifiers configured in CPW geometry using approximately 20 nm thick NbTiN films grown by reactive co-sputtering of NbN and TiN. Our NbTiN films have non-linear kinetic inductance as a function of current, described by L =L0 (1 +(I /I*) 2) , where I* = 15 . 96 +/- 0 . 11 mA measured by time domain reflectometry. We report the results of implementing an impedance taper that takes into account a significantly reduced phase velocity as it narrows, adding Au onto the CPW split grounds, as well as employing different designs of dispersion engineering. Qubit Measurements using KIT amplifiers will also be reported.

Design techniques and measured performance for a uniformly-pumped 4-cm diameter rod amplifier

International Nuclear Information System (INIS)

Linford, G.J.; Yarema, S.M.

1976-01-01

A solid-state laser rod amplifier of moderate aperture achieving a high degree of spatial gain uniformity has been constructed and its performance evaluated. Digital and analogue techniques were used to optimize the amplifier design for performance in a laser fusion application. Results of simple 2-D computer simulations and experimental evaluations of amplifier performance are presented

Auto-locking waveguide amplifier system for lidar and magnetometric applications

Science.gov (United States)

Pouliot, A.; Beica, H. C.; Carew, A.; Vorozcovs, A.; Carlse, G.; Kumarakrishnan, A.

2018-02-01

We describe a compact waveguide amplifier system that is suitable for optically pumping rubidium magnetometers. The system consists of an auto-locking vacuum-sealed external cavity diode laser, a semiconductor tapered amplifier and a pulsing unit based on an acousto-optic modulator. The diode laser utilises optical feedback from an interference filter to narrow the linewidth of an inexpensive laser diode to 500 kHz. This output is scannable over an 8 GHz range (at 780 nm) and can be locked without human intervention to any spectral marker in an expandable library of reference spectra, using the autolocking controller. The tapered amplifier amplifies the output from 50 mW up to 2 W with negligible distortions in the spectral quality. The system can operate at visible and near infrared wavelengths with MHz repetition rates. We demonstrate optical pumping of rubidium vapour with this system for magnetometric applications. The magnetometer detects the differential absorption of two orthogonally polarized components of a linearly polarized probe laser following optical pumping by a circularly polarized pump laser. The differential absorption signal is studied for a range of pulse lengths, pulse amplitudes and DC magnetic fields. Our results suggest that this laser system is suitable for optically pumping spin-exchange free magnetometers.

Optimizing learning of a locomotor task: amplifying errors as needed.

Science.gov (United States)

Marchal-Crespo, Laura; López-Olóriz, Jorge; Jaeger, Lukas; Riener, Robert

2014-01-01

Research on motor learning has emphasized that errors drive motor adaptation. Thereby, several researchers have proposed robotic training strategies that amplify movement errors rather than decrease them. In this study, the effect of different robotic training strategies that amplify errors on learning a complex locomotor task was investigated. The experiment was conducted with a one degree-of freedom robotic stepper (MARCOS). Subjects were requested to actively coordinate their legs in a desired gait-like pattern in order to track a Lissajous figure presented on a visual display. Learning with three different training strategies was evaluated: (i) No perturbation: the robot follows the subjects' movement without applying any perturbation, (ii) Error amplification: existing errors were amplified with repulsive forces proportional to errors, (iii) Noise disturbance: errors were evoked with a randomly-varying force disturbance. Results showed that training without perturbations was especially suitable for a subset of initially less-skilled subjects, while error amplification seemed to benefit more skilled subjects. Training with error amplification, however, limited transfer of learning. Random disturbing forces benefited learning and promoted transfer in all subjects, probably because it increased attention. These results suggest that learning a locomotor task can be optimized when errors are randomly evoked or amplified based on subjects' initial skill level.

A Method To ModifyCorrect The Performance Of Amplifiers

Directory of Open Access Journals (Sweden)

Rohith Krishnan R

2015-01-01

Full Text Available Abstract The actual response of the amplifier may vary with the replacement of some aged or damaged components and this method is to compensate that problem. Here we use op-amp Fixator as the design tool. The tool helps us to isolate the selected circuit component from rest of the circuit adjust its operating point to correct the performance deviations and to modify the circuit without changing other parts of the circuit. A method to modifycorrect the performance of amplifiers by properly redesign the circuit is presented in this paper.

Thermal-recovery of modal instability in rod fiber amplifiers

DEFF Research Database (Denmark)

Jørgensen, Mette Marie; Laurila, Marko; Noordegraaf, Danny

2013-01-01

We investigate the temporal dynamics of Modal instabilities (MI) in ROD fiber amplifiers using a 100 μm core rod fiber in a single-pass amplifier configuration, and we achieve ~200W of extracted output power before the onset of MI. Above the MI threshold, we investigate the temporal dynamics of b...... and thermally annealed between each test series. We find that the MI threshold degrades as it is reached multiple times, but is recovered by thermal annealing. We also find that the test history of the rods affects the temporal dynamics....