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Sample records for charge carriers

  1. Charge carrier transport in liquid crystals

    International Nuclear Information System (INIS)

    The materials exhibiting charge carrier mobility ranging from 10−3 to 0.1 cm2/Vs, i.e., between those of amorphous and crystalline materials, had been missing before the 1990s when the electronic conduction in liquid crystals was discovered. Since then, various liquid crystalline materials including discotic and calamitic liquid crystals have been studied in order to clarify their charge carrier transport properties in liquid crystalline mesophases. In this article, the historical background of the discovery of electronic conduction in liquid crystals, intrinsic and extrinsic conductions, unique properties of the charge carrier transport, the effect of molecular alignment on it, and the conduction mechanism in liquid crystalline mesophases are shortly described on the basis of the experimental and theoretical studies accumulated in these two decades, noting that the missing materials were liquid crystals. - Highlights: • Liquid crystals exhibit charge mobility ranging from 10–3 to 0.1 cm2/Vs. • Electronic (intrinsic) and ionic (extrinsic) conductions in liquid crystals • Unique charge carrier transport properties in liquid crystals • Effect of molecular alignment in mesophases on charge carrier transport • Conduction mechanism in smectic liquid crystals

  2. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    Science.gov (United States)

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  3. Electroactuation with Single Charge Carrier Ionomers

    OpenAIRE

    Lee, Alpha A; Colby, Ralph H.; Kornyshev, Alexei A.

    2012-01-01

    A simple theory of electromechanical transduction for single-charge-carrier double-layer electroactuators is developed, in which the ion distribution and curvature are mutually coupled. The obtained expressions for the dependence of curvature and charge accumulation on the applied voltage, as well as the electroactuation dynamics, are compared with literature data. The mechanical- or sensor- performance of such electroactuators appears to be determined by just three cumulative parameters, wit...

  4. Solid state cloaking for electrical charge carrier mobility control

    Science.gov (United States)

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  5. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  6. Study of Charge Carrier Transport in GaN Sensors

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2016-04-01

    Full Text Available Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  7. Charge carrier coherence and Hall effect in organic semiconductors.

    Science.gov (United States)

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  8. Charge carrier coherence and Hall effect in organic semiconductors

    Science.gov (United States)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  9. Photogeneration and recombination of charge carrier pairs and free charge carriers in polymer/fullerene bulk heterojunction films

    Energy Technology Data Exchange (ETDEWEB)

    Sliauzys, Gytis; Gulbinas, Vidmantas [Center for Physical Sciences and Technology, Savanoriu av. 231, 02300 Vilnius (Lithuania); Arlauskas, Kestutis [Department of Solid State Electronics, Vilnius University, Sauletekio al. 9, Build. 3, 10222 Vilnius (Lithuania)

    2012-07-15

    Photo-generation and recombination of free charge carriers in poly-3 (hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) blend films has been studied at different PCBM concentrations by means of fluorescence spectroscopy and transient photocurrent methods. We show that more than 80% of excitons form charge transfer (CT) states at PCBM concentrations above 4%. Efficiency of the CT state dissociation into free charge carries strongly depends on the PCBM concentration; the dissociation efficiency increases more than 30 times when PCBM concentration increases from 1 to 32%. We attribute the strong concentration dependence to formation of PCBM clusters facilitating electron migration and/or delocalization. Reduced charge carrier recombination coefficient has also been observed at high PCBM concentrations. We suggest that this may be partly caused by the reduced stability of reformed Coulombicaly bound charge pairs. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Lifetime definition of non-fundamental charge carriers in semiconductors

    International Nuclear Information System (INIS)

    This article deals with simple method of lifetime definition of non-fundamental charge carriers by permanent time quantity of Ni-GeO-GaSe structure on a big signal by deep inversion. This method consists of Ni-GeO-GaSe structure capacity changing registration in time. Chart that helps easily to find lifetime during transitional characteristics is brought

  11. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  12. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility.

    Science.gov (United States)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters. PMID:19044876

  13. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Carrier access charge billing and collecting... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and... billing and collecting of access charges to interexchange carriers. (b) Of access charges other than...

  14. Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.

    Science.gov (United States)

    Zhang, Yingjie; Chen, Qian; Alivisatos, A Paul; Salmeron, Miquel

    2015-07-01

    Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step function changes of gate bias. The measurements reveal an exponential decay of mobile carrier density with time constants of 3-5 s for holes and ∼10 s for electrons. An Ohmic behavior, with uniform carrier density, was observed along the channel during the injection and transport processes. These slow, uniform carrier trapping processes are reversible, with time constants that depend critically on the gas environment. We propose that the underlying mechanism is some reversible electrochemical process involving dissociation and diffusion of water and/or oxygen related species. These trapping processes are dynamically activated by the injected charges, in contrast with static electronic traps whose presence is independent of the charge state. Understanding and controlling these processes is important for improving the performance of electronic, optoelectronic, and memory devices based on disordered semiconductors. PMID:26099508

  15. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    Science.gov (United States)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  16. Analysis of Charge Carrier Transport in Organic Photovoltaic Active Layers

    Science.gov (United States)

    Han, Xu; Maroudas, Dimitrios

    2015-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological, deterministic charge carrier transport models. The models describe free electron and hole transport, trapping, and detrapping, as well as geminate charge-pair dissociation and geminate and bimolecular recombination, self-consistently with Poisson's equation for the electric field in the active layer. We predict photocurrent evolution in devices with active layers of P3HT, P3HT/PMMA, and P3HT/PS, as well as P3HT/PCBM blends, and photocurrent-voltage (I-V) relations in these devices at steady state. Charge generation propensity, zero-field charge mobilities, and trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental measurements. We have analyzed effects of the active layer morphology for layers consisting of both pristine drop-cast films and of nanoparticle (NP) assemblies, as well as effects on device performance of insulating NP doping in conducting polymers and of specially designed interlayers placed between an electrode and the active layer. The model predictions provide valuable input toward synthesis of active layers with prescribed morphology that optimize OPV device performance.

  17. Spontaneous Charge Carrier Localization in Extended One-Dimensional Systems

    Science.gov (United States)

    Vlček, Vojtěch; Eisenberg, Helen R.; Steinle-Neumann, Gerd; Neuhauser, Daniel; Rabani, Eran; Baer, Roi

    2016-05-01

    Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects, or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally tuned range-separated density functional theory and many-body perturbation calculations within the G W approximation reveal that in trans-polyacetylene and polythiophene the hole density localizes on a length scale of several nanometers. This is due to exchange-induced translational symmetry breaking of the charge density. Ionization potentials, optical absorption peaks, excitonic binding energies, and the optimally tuned range parameter itself all become independent of polymer length as it exceeds the critical localization length. Moreover, we find that lattice disorder and the formation of a polaron result from the charge localization in contrast to the traditional view that lattice distortions precede charge localization. Our results can explain experimental findings that polarons in conjugated polymers form instantaneously after exposure to ultrafast light pulses.

  18. The Stability and Charge Carriers in Bilayer Silicene

    OpenAIRE

    Rui, Wang; Shaofeng, Wang; Xiaozhi, Wu

    2013-01-01

    The structure optimization, phonon, and ab initio ?nite temperature molecular dynamics calculations have been performed to predict that bilayer silicene has stable structure with AB stacking geometry and is more favorable energetically to synthesize than monolayer silicene, a two-dimensional honeycomb lattice with buckled geometry. Marvellously, its electronic bands show that the charge carriers behave like relativistic Dirac fermions with linear energy dispersions near the K points. An insig...

  19. Pressure effect on charge carrier mobility in SmS

    International Nuclear Information System (INIS)

    Dependences of the charge carrier mobility on the pressure of hydrostatic compression for samarium monosulfide minocrystals and some solid solutions on its base in the pressure range from the atmospheric to critical pressures of the semiconductor-metal phase transition at T=300K are investigated. The behaviour of the factor in SmS under pressure is calculated from the experimental data on the pressure dependence of the Hall constant and thermo-e.m.f

  20. Charge carrier coherence and Hall effect in organic semiconductors

    OpenAIRE

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experimen...

  1. Charge-carrier dynamics and Coulomb effects in semiconductor tetrapods

    International Nuclear Information System (INIS)

    In this thesis the Coulomb interaction and its influence on localization effects and dynamics of charge carriers in semiconductor nanocrystals were studied. In the studied nanostructures it deals with colloidal tetrapod heterostructures, which consist of a cadmium selenide (CdSe) core and four tetraedrical grown cadmium sulfide (CdS) respectively cadmium telluride (CdTe) legs, which exhibit a type-I respectively type-II band transition. The dynamics and interactions were studied by means of photoluminescence (PL) and absorption measurements both on the ensemble and on single nanoparticles, as well as time-resolved PL and transient absorption spectroscopy. Additionally theoretical simulations of the wave-function distributions were performed, which are based on the effective-mass approximation. The special band structure of the CdSe/CdS tetrapods offers a unique possibility to study the Coulomb interaction. The flat conduction band in these heterostructures makes the electron via the Coulomb interaction sensitive to the localization position of the hole within the structure. The valence band has instead a potential maximum in the CdSe, which leads to a directed localization of the hole and the photoluminescence of the core. Polarization-resolved measurements showed hereby an anisotropy of the photoluminescence, which could be explained by means of simulations of the wave-function distribution with an asymmetry at the branching point. Charge-carrier localization occur mainly both in longer structures and in trap states in the CdS leg and can be demonstrated in form of a dual emission from a nanocrystal. The charge-carrier dynamics of electron and hole in tetrapods is indeed coupled by the Coulomb interaction, however it cannot be completely described in an exciton picture. The coupled dynamics and the Coulomb interaction were studied concerning a possible influence of the geometry in CdSe/CdS nanorods and compared with those of the tetrapods. The interactions of the

  2. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  3. Dynamics of charge carriers on hexagonal nanoribbons with vacancy defects

    Science.gov (United States)

    Ferreira da Cunha, Wiliam; de Oliveira Neto, Pedro Henrique; Terai, Akira; Magela e Silva, Geraldo

    2016-07-01

    We develop a general model to investigate the dynamics of charge carriers in vacancy endowed honeycomb two-dimensional nanolattices. As a fundamental application, results concerning the influence of vacancies placed on different sites of semiconducting armchair graphene nanoribbons (AGNR) over the transport of polarons are presented. It is observed that the positioning of vacancies plays a major role over the scattering of the charge carriers, in the sense that their overall mobility is determined by where the defect is allocated. By considering different structural configurations of the system, the arising polaron can either move freely or be reflected. Therefore, our work provides a phenomenological understanding of the underlying mechanism responsible for the change of conductivity experienced by systems in which structural defects are present, a fact that has been reported for different nanostructures of the same symmetry. Because vacancies are one of the most common kinds of defects and are, in practice, unavoidable, the kind of description proposed in the present paper is crucial to correctly address transport and electronic properties in more realistic electronic devices based on two-dimensional nanolattices.

  4. Polaron mass of charge carriers in semiconductor quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Maslov, A. Yu., E-mail: maslov.ton@mail.ioffe.ru; Proshina, O. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  5. Charge carrier rearrangement in spinel crystals irradiated at low temperatures

    International Nuclear Information System (INIS)

    The results of an investigation of thermoluminescence (TL) in nominally pure MgAl2O4 spinel single crystals in the temperature range between 80-670 K are presented. For a heating rate of 0.21 K/s, TL spectra exhibit glow peaks in three distinct temperature ranges: 100-160, 270-370 and 470-670 K. The most prominent peaks are at 115, 140, 305, 335, 525, 570 and 605 K. The locations of the temperature maxima, as well as the intensity of the peaks, vary depending on the treatment of the crystals, the type of irradiation and the temperature of irradiation. Measurements of the glow peaks at different emission wavelengths and the use of partial bleaching and isothermal decay techniques for TL, allowed us to propose mechanisms for charge carrier rearrangement at lattice defects and impurity ions, during irradiation and subsequent heating

  6. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  7. Fractal spectrum of charge carriers in quasiperiodic graphene structures

    Energy Technology Data Exchange (ETDEWEB)

    Sena, S H R; Pereira Jr, J M; Farias, G A [Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, Campus do Pici, 60455-900 Fortaleza, CE (Brazil); Vasconcelos, M S [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil); Albuquerque, E L, E-mail: pereira@fisica.ufc.b, E-mail: eudenilson@gmail.co [Departamento de Biofisica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil)

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  8. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    Science.gov (United States)

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature. PMID:27367397

  9. Charge carrier transport properties in layer structured hexagonal boron nitride

    Science.gov (United States)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0)-α with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  10. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  11. Ultrafast charge carrier dynamics in Au/semiconductor nanoheterostructures

    Science.gov (United States)

    Lambright, Scott

    The charge carrier dynamics in several Au/semiconductor core/shell heterostructures were examined. Firstly, Au/CdS core/shell nanocomposites were synthesized in a four step procedure culminating in a cation exchange performed on the shell. Previous studies of the ultrafast carrier dynamics in Au/CdS nanocomposites with epitaxial boundary regions reported the suppression of plasmon character in transient absorption spectra accompanied by broadband photoinduced absorption. The coupling of electron wavefunctions with lattice defects at the boundary of the two domains has been blamed for these phenomena. In the current study, transmission electron micrographs of Au/CdS synthesized using cation exchange showed no evidence of strain on the lattice of either component, while femtosecond transient absorption data show the retention of bleach regions attributed to CdS's 1S(e)-1S3/2(h) transition and Au's plasmon resonance. Accelerated rates of bleach recovery for both excitations ( tauexiton ≈ 300 ps, tauplasmon ≈ .7 ps) indicated that the interaction of Au and CdS domains leads to faster relaxation to their respective photoexcitations when compared to relaxation times in isolated Au and CdS nanoparticles. It was believed that the Au/CdS boundary was non-epitaxial in the presented core/shell nanocomposites. Secondly, these non-epitaxial Au/CdS core/shells were subsequently used to demonstrate near-field energy transfer from 5 nm diameter Au cores to CdS-encapsulated CdSe quantum dots. To this end, Au/CdS and CdSe/CdS nanocrystals were embedded in semiconductor-matrix-encapsulated-nanocrystal-arrays (SMENA) together. The encapsulation of both domains in the high band-gap semiconductor CdS was a means to suppress charge transfer between the two nanoparticles. The fluorescence intensity in these films was enhanced 6-fold in some cases as a result of the presence of Au domains. It was also demonstrated that the fluorescence enhancement was independent of the potential

  12. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NARCIS (Netherlands)

    Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; De Leeuw, D.M.; Michels, M.A.J.

    2005-01-01

    From a numerically exact solution of the Master equation for hoppingtransport in a disordered energy landscape with a Gaussian densityof states, we determine the dependence on temperature, carrier density, and electric field of the charge carrier mobility. Experimentalspace-charge limited currents i

  13. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    Science.gov (United States)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  14. Drift of charge carriers in crystalline organic semiconductors.

    Science.gov (United States)

    Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

    2016-04-14

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10(5) V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes. PMID:27083750

  15. Drift of charge carriers in crystalline organic semiconductors

    Science.gov (United States)

    Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

    2016-04-01

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ˜105 V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

  16. Temperature dependence of charge carrier generation in organic photovoltaics.

    Science.gov (United States)

    Gao, Feng; Tress, Wolfgang; Wang, Jianpu; Inganäs, Olle

    2015-03-27

    The charge generation mechanism in organic photovoltaics is a fundamental yet heavily debated issue. All the generated charges recombine at the open-circuit voltage (V_{OC}), so that investigation of recombined charges at V_{OC} provides a unique approach to understanding charge generation. At low temperatures, we observe a decrease of V_{OC}, which is attributed to reduced charge separation. Comparison between benchmark polymer:fullerene and polymer:polymer blends highlights the critical role of charge delocalization in charge separation and emphasizes the importance of entropy in charge generation. PMID:25860774

  17. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  18. Measurement of charge carrier lifetimes in HgCdTe crystals

    International Nuclear Information System (INIS)

    A method, developed for the determination of both electrical and photoelectrical properties of the same Hgsub(1-x)Cdsub(x)Te samples (around x=0.2), is presented. A system which includes a pulsed 0.9 μm wavelength GaAs light source was designed and constructed for the measurement of charge carrier lifetimes from 20 ns to 20 ms in temperature range 80-300 K. To find the mobility and concentration of the charge carriers, the Hall effect was determined via the van der Pauw method. Electrical and photoelectrical properties of raw material wafers could thus be established. Charge carrier lifetimes in Hgsub(1-x)Cdsub(x)Te, Ge and InSb were measured. The corresponding theoretical expected lifetimes were calculated on the basis of the charge carriers concentration. The experimental results are compared to the theoretical ones and the discrepancies are discussed

  19. Unified description of charge-carrier mobilities in disordered semiconducting polymers

    NARCIS (Netherlands)

    Pasveer, WF; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, PA; Blom, PWM; de Leeuw, DM; Michels, MAJ

    2005-01-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in d

  20. Recombination in liquid filled ionisation chambers with multiple charge carrier species: Theoretical and numerical results

    International Nuclear Information System (INIS)

    Liquid-filled ionisation chambers (LICs) are used in radiotherapy for dosimetry and quality assurance. Volume recombination can be quite important in LICs for moderate dose rates, causing non-linearities in the dose rate response of these detectors, and needs to be corrected for. This effect is usually described with Greening and Boag models for continuous and pulsed radiation respectively. Such models assume that the charge is carried by two different species, positive and negative ions, each of those species with a given mobility. However, LICs operating in non-ultrapure mode can contain different types of electronegative impurities with different mobilities, thus increasing the number of different charge carriers. If this is the case, Greening and Boag models can be no longer valid and need to be reformulated. In this work we present a theoretical and numerical study of volume recombination in parallel-plate LICs with multiple charge carrier species, extending Boag and Greening models. Results from a recent publication that reported three different mobilities in an isooctane-filled LIC have been used to study the effect of extra carrier species on recombination. We have found that in pulsed beams the inclusion of extra mobilities does not affect volume recombination much, a behaviour that was expected because Boag formula for charge collection efficiency does not depend on the mobilities of the charge carriers if the Debye relationship between mobilities and recombination constant holds. This is not the case in continuous radiation, where the presence of extra charge carrier species significantly affects the amount of volume recombination. - Highlights: • Analytical extension of Greening and Boag theories to multiple charge carriers. • Detailed numerical study of process of volume recombination in LICs. • Recombination in pulsed beams is independent of number and mobilities of carriers. • Multiple charge carriers have a significant effect in continuous

  1. The state of itinerant charge carriers and thermoelectric effects in correlated oxide metals

    International Nuclear Information System (INIS)

    We analyzed the physics of transport processes and, in particular, the thermoelectric power in the mercurocuprates and other cuprates to get a better insight into the state of the carriers in these compounds. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed. The experimental studies of thermoelectric power showed that the state of carriers in cuprates can be influenced by many complicated scattering processes, however the underlying mechanism for the linear decreasing of the TEP with increasing the temperature for most hole-doped HTSC cuprates is still not yet known. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed for a few models of charge transport. A comparison between the analytical and experimental results is also made. It is concluded that the crucial factor for the understanding of the transport properties of correlated oxide metals is the nature of itinerant charge carriers, i.e. renormalized quasiparticles. (author)

  2. 75 FR 18255 - Passenger Facility Charge Database System for Air Carrier Reporting

    Science.gov (United States)

    2010-04-09

    ... Federal Aviation Administration Passenger Facility Charge Database System for Air Carrier Reporting AGENCY... interested parties of the availability of the Passenger Facility Charge (PFC) database system to report PFC... public agency. The FAA has developed a national PFC database system in order to more easily track the...

  3. Poly(silylene)s: Charge carrier photogeneration and transport

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Eckhardt, A.

    2001-01-01

    Roč. 12, č. 7 (2001), s. 427-440. ISSN 1042-7147 R&D Projects: GA AV ČR IAA4050603; GA AV ČR IAA1050901; GA AV ČR KSK4050111 Institutional research plan: CEZ:AV0Z4050913 Keywords : charge photogeneration * charge-transfer * ion-pair Subject RIV: CC - Organic Chemistry Impact factor: 0.701, year: 2001

  4. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...... a factor of five. Charge trapping and space charge formation were modified by the introduction of titanium dioxide...

  5. Features of charge carrier transport determined from carrier extraction current in .mu.c-Si:H

    Czech Academy of Sciences Publication Activity Database

    Juška, G.; Arlauskas, K.; Nekrašas, N.; Stuchlík, Jiří; Niquille, X.; Wyrsch, N.

    299-302, - (2002), s. 375-379. ISSN 0022-3093 Grant ostatní: VMSF(LT) 01SP-02 Institutional research plan: CEZ:AV0Z1010914 Keywords : mobility of majority carriers * photoconductivity transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2002

  6. Photoconductivity and Charge-Carrier Photogeneration in Photorefractive Polymers

    NARCIS (Netherlands)

    Däubler, Thomas K.; Kulikovsky, Lazar; Neher, Dieter; Cimrová, Vera; Hummelen, J.C.; Mecher, Erwin; Bittner, Reinhard; Meerholz, Klaus; Lawson, M.; Meerholz, Klaus

    2002-01-01

    We have studied photogeneration, transport, trapping and recombination as the governing mechanisms for the saturation field strength and the time response of the photorefractive (PR) effect in PVK-based PR materials, utilizing xerographic discharge and photoconductivity experiments. Both the charge

  7. Charge carrier mobility in phthalocyanines: Experiment and quantum chemical calculations

    Czech Academy of Sciences Publication Activity Database

    Kratochvílová, Irena

    Rijeka : InTech, 2012 - (Tada, T.), s. 159-174 ISBN 978-953-51-0372-1 R&D Projects: GA ČR(CZ) GAP304/10/1951 Institutional research plan: CEZ:AV0Z10100520 Keywords : phtalocyanines * DFT * charge mobility Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.intechopen.com/books/quantum-chemistry-molecules-for-innovations

  8. Stabilization of Charge Carriers in Picket-Fence Polythiophenes Using Dielectric Side Chains.

    Science.gov (United States)

    Zhao, Chunhui; Sakurai, Tsuneaki; Yoneda, Satoru; Seki, Shu; Sugimoto, Manabu; Oki, Choji; Takeuchi, Masayuki; Sugiyasu, Kazunori

    2016-08-19

    Insulated molecular wires (IMWs) are π-conjugated polymers that are molecularly sheathed with an insulating layer and are structurally analogous to electric power cords at the nanoscale. Such unique architectures are expected in molecular electronics and organic devices. Herein, we propose a new molecular design concept of IMWs, in which the sheaths can be customized, thereby enabling the modulation of the electronic properties of the interior π-conjugated systems. To this end, we focused our attention on the dielectric constant of the sheaths, as it governs the electrostatic interaction between charges. Upon doping, charge carriers, such as polaron and bipolaron, were generated regardless of the dielectric properties of the sheaths. Flash-photolysis time-resolved microwave conductivity measurements revealed that intrawire charge carrier mobility was independent of the sheaths. However, we found that the charge carriers could be stabilized by the sheaths with a high dielectric constant owing to the charge screening effect. We expect that IMWs designed in this way will be useful in a variety of applications, where the nature of charge carriers plays an important role, and particularly when redox switching is required (e.g., electrochromic, magnetic, and memory applications). PMID:27503254

  9. Minimizing charge carrier losses in photoelectrochemical water splitting

    OpenAIRE

    Rongé, Jan; De Volder, Michaël; Deng, Shaoren; Dendooven, Jolien; Detavernier, Christophe; Martens, Johan

    2013-01-01

    Solar hydrogen from photoelectrochemical water splitting is a possible solution for future energy supply. Despite promising efforts, efficiencies of such systems are still at around 5 % [1]. Difficulties associated with photoelectrochemical cells can be attributed to the integration of photophysical and electrochemical processes in a single device. While light absorption and charge separation must be maximized in the former, the latter requires large surface area and imposes kinetic barriers ...

  10. Home built equipment for measuring Hall coefficient and charge carrier concentration, mobility and resistivity

    DEFF Research Database (Denmark)

    Borup, Kasper Andersen; Christensen, Mogens; Blichfeld, Anders Bank; Johnsen, Simon; Toberer, Eric; Snyder, G. Jeffrey

    2011-01-01

    system, the Quantum Design, Physical Properties Measurement System (PPMS). Measurements on samples with different resistivity and charge carrier concentration will be shown, covering both ends of the interval of samples we are able to measure as well as the range normally observed for thermoelectrics......We present here a home built setup for measuring the specific resistivity, hall coefficient, and charge carrier concentration and mobility at elevated temperatures. The system is optimized for measurements of samples ranging between doped semiconductors and high resistivity metals and uses the van...

  11. Charge Carrier Lifetimes Exceeding 15 μs in Methylammonium Lead Iodide Single Crystals.

    Science.gov (United States)

    Bi, Yu; Hutter, Eline M; Fang, Yanjun; Dong, Qingfeng; Huang, Jinsong; Savenije, Tom J

    2016-03-01

    The charge carrier lifetime in organic-inorganic perovskites is one of the most important parameters for modeling and design of solar cells and other types of devices. In this work, we use CH3NH3PbI3 single crystal as a model system to study optical absorption, charge carrier generation, and recombination lifetimes. We show that commonly applied photoluminescence lifetime measurements may dramatically underestimate the intrinsic carrier lifetime in CH3NH3PbI3, which could be due to severe charge recombination at the crystal surface and/or fast electron-hole recombination close to the surface. By using the time-resolved microwave conductivity technique, we investigated the lifetime of free mobile charges inside the crystals. Most importantly, we find that for homogeneous excitation throughout the crystal, the charge carrier lifetime exceeds 15 μs. This means that the diffusion length in CH3NH3PbI3 can be as large as 50 μm if it is no longer limited by the dimensions of the crystallites. PMID:26901658

  12. Photogeneration of free charge carriers in tenuously packed .pi. conjugated polymer chains

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Pfleger, Jiří; Rybak, A.; Jung, J.; Ulanski, J.; Halašová, Klára; Vohlídal, J.

    2011-01-01

    Roč. 22, č. 12 (2011), s. 2075-2083. ISSN 1042-7147 R&D Projects: GA ČR GA202/07/0643; GA AV ČR KAN100500652; GA AV ČR IAA401770601; GA MŠk 7E10040 Institutional research plan: CEZ:AV0Z40500505 Keywords : photogeneration of free charge carriers * charge transfer states * conjugated polymers Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.007, year: 2011

  13. Model of the charge carrier mobility in conjugated polymers containing dipolar species

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr; Menšík, Miroslav

    Pisa : European Polymer Federation, 2013. O7-9. [European Polymer Congress - EPF 2013. 16.06.2013-21.06.2013, Pisa] R&D Projects: GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 Keywords : charge carrier mobility * conjugated polymer * Marcus theory Subject RIV: BM - Solid Matter Physics ; Magnetism

  14. Charge carrier transport properties in CdTe measured with time of flight technique

    International Nuclear Information System (INIS)

    The experimental results of charge carrier transport properties obtained in high resistivity CdTe with time of flight technique is reviewed. The data for electrons and holes measured Cl and In doped material are presented. The effect of ionized scattering centers are also analyzed. A comparison between theory and experiment is made

  15. Influence of injected charge carriers on photocurrents in polymer solar cells

    NARCIS (Netherlands)

    Wehenkel, Dominique J.; Koster, L. Jan Anton; Wienk, Martijn M.; Janssen, Rene A. J.

    2012-01-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for phot

  16. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  17. Ab initio charge-carrier mobility model for amorphous molecular semiconductors

    Science.gov (United States)

    Massé, Andrea; Friederich, Pascal; Symalla, Franz; Liu, Feilong; Nitsche, Robert; Coehoorn, Reinder; Wenzel, Wolfgang; Bobbert, Peter A.

    2016-05-01

    Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential to describe the electrical properties of devices based on these materials. The disordered nature of these semiconductors leads to percolative charge transport with a large characteristic length scale, posing a challenge to the development of such models from ab initio simulations. Here, we develop an ab initio mobility model using a four-step procedure. First, the amorphous morphology together with its energy disorder and intermolecular charge-transfer integrals are obtained from ab initio simulations in a small box. Next, the ab initio information is used to set up a stochastic model for the morphology and transfer integrals. This stochastic model is then employed to generate a large simulation box with modeled morphology and transfer integrals, which can fully capture the percolative charge transport. Finally, the charge-carrier mobility in this simulation box is calculated by solving a master equation, yielding a mobility function depending on temperature, carrier concentration, and electric field. We demonstrate the procedure for hole transport in two important molecular semiconductors, α -NPD and TCTA. In contrast to a previous study, we conclude that spatial correlations in the energy disorder are unimportant for α -NPD. We apply our mobility model to two types of hole-only α -NPD devices and find that the experimental temperature-dependent current density-voltage characteristics of all devices can be well described by only slightly decreasing the simulated energy disorder strength.

  18. Determination of charge carrier concentration in doped nonpolar liquids by impedance spectroscopy in the presence of charge adsorption.

    Science.gov (United States)

    Yezer, Benjamin A; Khair, Aditya S; Sides, Paul J; Prieve, Dennis C

    2016-05-01

    The impedance of dodecane doped with sorbitan trioleate (Span 85), sorbitan monooleate (Span 80) and sorbitan monolaurate (Span 20) was measured as a function of frequency using a 10mV amplitude sinusoidal voltage applied across a parallel plate cell with a 10μm spacing. The tested solutions varied in concentration from 1mM to 100mM and the frequency range was 10(-2)-10(4)Hz. Nyquist plots of all three surfactants showed the high frequency semicircle characteristic of parallel resistance and capacitance but often exhibited a second semicircle at low frequencies which was attributed to charge adsorption and desorption. The electrical conductivity of each surfactant was proportional to surfactant concentration for concentrations above 10mM. Fitting the data to models for charge migration, differential capacitance, and adsorption allowed extraction of both charge concentration and two kinetic parameters that characterize the rate of adsorption and desorption. Above 10mM the ratio of charge carriers per surfactant molecule was 22ppm for Span 20, 3ppm for Span 80, and 0.2ppm for Span 85. A higher number of charge carriers per molecule of surfactant was associated with larger micelles. The adsorption rate constants were independent of surfactant concentration while the desorption rate constants were proportional to the surfactant concentration. This dependence indicated that uncharged surfactant, whether in micelles or not, participated in the desorption of charge. Predictions of the adsorption/desorption model for large constant electric fields agreed qualitatively with data from the literature (Karvar et al., 2014). PMID:26905337

  19. The thermoballistic transport model a novel approach to charge carrier transport in semiconductors

    CERN Document Server

    Lipperheide, Reinhard

    2014-01-01

    The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detai...

  20. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  1. Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

    CERN Document Server

    Kazakevich, L A

    2003-01-01

    It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

  2. Kelvin probe force microscopy on doped semiconductor nanostructures with local, carrier-depleted space charge regions

    Energy Technology Data Exchange (ETDEWEB)

    Baumgart, Christine; Helm, Manfred; Schmidt, Heidemarie [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Mueller, Anne-Dorothea; Mueller, Falk [Anfatec Instruments AG, Melanchthonstr. 28, 08606 Oelsnitz (Germany)

    2011-07-01

    Failure analysis and optimization of semiconducting devices require knowledge of their electrical properties. Kelvin probe force microscopy (KPFM) is the most promising non-contact electrical nanometrology technique to meet the demands of today's semiconductor industry. We present its applicability to locally doped silicon structures. Quantitative dopant profiling by means of KPFM measurements is successfully demonstrated on a conventional static random access memory (SRAM) cell and on cross-sectionally prepared Si epilayers by applying a recently introduced new explanation of the measured KPFM signal. Additionally, the influence of local, carrier-depleted space charge regions and of the electric fields across them is discussed. It is explained how drift and diffusion of injected charge carriers in intrinsic electric fields influence the surface region of the investigated semiconductor and thus may disturb the detected KPFM bias.

  3. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    Science.gov (United States)

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-06-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery.

  4. Charge Carrier Transport and Photogeneration in P3HT:PCBM Photovoltaic Blends

    KAUST Repository

    Laquai, Frederic

    2015-05-03

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano­fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10−4 cm2 V−1 s−1 after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea­sured in P3HT:PCBM photovoltaic devices.

  5. Determination of charge carrier profiles - Problems and limitations of methods at short ranges

    International Nuclear Information System (INIS)

    The determination of charge carrier profiles near the surface produced by low-energy ion implantation is partly possible by the aid of a modified capacitance-voltage method thermally stimulated current (TSC) spectroscopy, and Hall measurements as exemplified by silicon samples. The capacitance spectroscopy by means of Schottky junctions and the effect of deep defects on the first, the spectroscopy of deep levels by the TSC method and differential Hall measurements are presented

  6. Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

    OpenAIRE

    C. Maragliano; Lilliu, S.; M. S. Dahlem; Chiesa, M.; SOUIER, T.; Stefancich, M.

    2014-01-01

    In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc o...

  7. Influence of injected charge carriers on photocurrents in polymer solar cells

    OpenAIRE

    Wehenkel, Dominique J.; Koster, L. Jan Anton; Wienk, Martijn M.; Janssen, Rene A. J.

    2012-01-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for photogeneration and Langevin recombination of electrons and holes. We demonstrate that accounting for the series resistance of the device is essential to determine Jph. Without such correction, the res...

  8. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    OpenAIRE

    Astakhov, O.; Carius, R.; F. Finger; Petrusenko, Y.; Borysenko, V.; Barankov, D.

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparin...

  9. A charge carrier transport model for donor-acceptor blend layers

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, Janine, E-mail: janine.fischer@iapp.de; Widmer, Johannes; Koerner, Christian; Vandewal, Koen; Leo, Karl, E-mail: leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Kleemann, Hans [Novaled GmbH, Dresden (Germany); Tress, Wolfgang, E-mail: leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Laboratoire de Photonique et Interfaces, École polytechnique fédérale de Lausanne, 1015 Lausanne (Switzerland); Riede, Moritz [Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Physics Department, University of Oxford, Oxford OX1 3PU (United Kingdom)

    2015-01-28

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C{sub 60} in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (E{sub t} = 0.14 eV, N{sub t} = 1.2 × 10{sup 18 }cm{sup −3}) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer.

  10. Improved charge carrier separation in barium tantalate composites investigated by laser flash photolysis.

    Science.gov (United States)

    Schneider, Jenny; Nikitin, Konstantin; Wark, Michael; Bahnemann, Detlef W; Marschall, Roland

    2016-04-20

    Charge carrier dynamics in phase pure Ba5Ta4O15 and in a Ba5Ta4O15-Ba3Ta5O15 composite have been studied by means of diffuse reflectance laser flash photolysis spectroscopy in the presence and absence of an electron donor, in order to reveal the reason for the improved photocatalytic performance of the latter. For the first time the transient absorption of trapped electrons with a maximum at around 650 nm and of trapped holes with a transient absorption maximum at around 310 nm is reported for tantalates. The decay kinetics of the photogenerated charge carriers could be fitted by second order reaction kinetics, and the direct recombination of the trapped electrons with the trapped holes was proven. In the absence of an electron donor, no difference in the decay behavior between the phase pure material and the composite material is found. In the presence of methanol, for the pure phase Ba5Ta4O15 the recombination of the charge carriers could not be prevented and the trapped electrons also recombine with the ˙CH2OH radical formed via the methanol oxidation by the trapped holes. However, in the composite, the electron can be stored in the system, the ˙CH2OH radical injects an electron into the conduction band of the second component of the composite, i.e., Ba3Ta5O15. Thus, the electrons are available for an extended period to induce reduction reactions. PMID:26732364

  11. Structural influences on charge carrier dynamics for small-molecule organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhiping, E-mail: wang-zhiping@aist.go.jp; Shibata, Yosei; Yamanari, Toshihiro; Matsubara, Koji; Yoshida, Yuji [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, 1-1-1 Higashi, 305-8565 Tsukuba (Japan); Miyadera, Tetsuhiko, E-mail: tetsuhiko-miyadera@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, 1-1-1 Higashi, 305-8565 Tsukuba (Japan); JST-PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, 332-0012 Saitama (Japan); Saeki, Akinori; Seki, Shu [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871 Suita, Osaka (Japan); Zhou, Ying [Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, 1-1-1 Higashi, 305-8565 Tsukuba (Japan)

    2014-07-07

    We investigated the structural influences on the charge carrier dynamics in zinc phthalocyanine/fullerene (ZnPc/C{sub 60}) photovoltaic cells by introducing poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and 2,5-bis(4-biphenylyl)-bithiophene (BP2T) between indium tin oxide and ZnPc layers. ZnPc films can be tuned to be round, long fiber-like, and short fiber-like structure, respectively. Time-resolved microwave conductivity measurements reveal that charge carrier lifetime in ZnPc/C{sub 60} bilayer films is considerably affected by the intra-grain properties. Transient photocurrent of ZnPc single films indicated that the charge carriers can transport for a longer distance in the long fiber-like grains than that in the round grains, due to the greatly lessened grain boundaries. By carefully controlling the structure of ZnPc films, the short-circuit current and fill factor of a ZnPc/C{sub 60} heterojunction solar cell with BP2T are significantly improved and the power conversion efficiency is increased to 2.6%, which is 120% larger than the conventional cell without BP2T.

  12. A charge carrier transport model for donor-acceptor blend layers

    International Nuclear Information System (INIS)

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C60 in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (Et = 0.14 eV, Nt = 1.2 × 1018 cm−3) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer

  13. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy

    Science.gov (United States)

    Ponseca, C. S., Jr.; Sundström, V.

    2016-03-01

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  14. Subsurface Imaging and Sensing of Charge Carrier Movements in the Earth’s Crust

    Science.gov (United States)

    Dahlgren, R.; Freund, F. T.; Lazarus, M.; Wang, J. S.; Rekenthaler, D.; Peters, R. D.; Duma, G.

    2009-12-01

    The DUSEL facility will enable unique opportunities for field experiments that would otherwise not be possible at surface facilities (Lesko, K.T., TAUP, 2007) and support a host of undergraduate and graduate educational projects. In this presentation, some of the proposed geophysics experiments will be described as part of the subsurface Imaging and Sensing (SIS) project to study charge carrier movement in crustal rock as a function of various perturbations. The electric conductivity of the Earth’s crust is dominated by positive hole charge carriers, e.g. mobile electron vacancy defects (EVD) in the oxygen anion sublattice of minerals that make up the bulk of crustal rocks. We are interested in (i) coupling of fundamental processes linked to the activation of additional EVDs in rocks deep in the crust subjected to tectonic stresses and the outflow of these charge carriers into the surrounding rocks, (ii) their manifestation across the electromagnetic spectrum and other measuands, (iii) induced forces that arise when these charge carriers are subjected to the episodic or daily magnetic field variations coming from geomagnetic storms or from the ionospheric current vortex, and (iv) in the movement of positive holes in the shallow crust when a thunderstorm system drifts overhead, dragging along a charge cloud in the ground. We propose to conduct active rock stressing experiments in situ using expanding grout technique (performing electrical, electromagnetic, and VolksMeter tilt measurements) and to monitor the electric and magnetic field variations penetrating into the Earth’s crust. Additionally optical phenomena will be investigated (anomalous infrared signatures, visible light arising from atomic oxygen and corona discharge, and infrared imaging). If budget permits, measurement of changes of acoustic velocity, evolution of chemical species (H2, O*, Rn, etc) and radar reflectivity as a function of stresses will also be attempted. We propose to study the charge

  15. Excited state and charge-carrier dynamics in perovskite solar cell materials

    Science.gov (United States)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  16. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    Science.gov (United States)

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells. PMID:27176547

  17. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    Science.gov (United States)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  18. Concentration dependence of the transport energy level for charge carriers in organic semiconductors

    Science.gov (United States)

    Oelerich, J. O.; Huemmer, D.; Weseloh, M.; Baranovskii, S. D.

    2010-10-01

    The concept of the transport energy (TE) has proven to be one of the most powerful theoretical approaches to describe charge transport in organic semiconductors. In the recent paper L. Li, G. Meller, and H. Kosina [Appl. Phys. Lett. 92, 013307 (2008)] have studied the effect of the partially filled localized states on the position of the TE level. We show that the position of the TE is essentially different to the one suggested by L. Li, G. Meller, and H. Kosina [Appl. Phys. Lett. 92, 013307 (2008)] We further modify the standard TE approach taking into account the percolation nature of the transport path. Our calculations show that the TE becomes dependent on the concentration of charge carriers n at much higher n values than those, at which the carrier mobility already strongly depends on n. Hence the calculations of the concentration-dependent carrier mobility cannot be performed within the approach, in which only the concentration dependence of the TE is taken into account.

  19. Kinetics of photo-activated charge carriers in Sn:CdS

    Science.gov (United States)

    Patidar, Manju Mishra; Panda, Richa; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V.

    2016-05-01

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd1-xSnxS (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ1, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  20. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    Science.gov (United States)

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production

  1. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  2. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-07-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid.

  3. Charge-Carrier Dynamics in Organic-Inorganic Metal Halide Perovskites.

    Science.gov (United States)

    Herz, Laura M

    2016-05-27

    Hybrid organic-inorganic metal halide perovskites have recently emerged as exciting new light-harvesting and charge-transporting materials for efficient photovoltaic devices. Yet knowledge of the nature of the photogenerated excitations and their subsequent dynamics is only just emerging. This article reviews the current state of the field, focusing first on a description of the crystal and electronic band structure that give rise to the strong optical transitions that enable light harvesting. An overview is presented of the numerous experimental approaches toward determining values for exciton binding energies, which appear to be small (a few milli-electron volts to a few tens of milli-electron volts) and depend significantly on temperature because of associated changes in the dielectric function. Experimental evidence for charge-carrier relaxation dynamics within the first few picoseconds after excitation is discussed in terms of thermalization, cooling, and many-body effects. Charge-carrier recombination mechanisms are reviewed, encompassing trap-assisted nonradiative recombination that is highly specific to processing conditions, radiative bimolecular (electron-hole) recombination, and nonradiative many-body (Auger) mechanisms. PMID:26980309

  4. Improvement of the charge-carrier transport property of polycrystalline CdTe for digital fluoroscopy

    International Nuclear Information System (INIS)

    Minimizing the radiation impact to the patient is currently an important issue in medical imaging. Particularly, in case of X-ray fluoroscopy, the patient is exposed to high X-ray dose because a large number of images is required in fluoroscopic procedures. In this regard, a direct-conversion X-ray sensor offers the advantages of high quantum efficiency, X-ray sensitivity, and high spatial resolution. In particular, an X-ray sensor in fluoroscopy operates at high frame rate, in the range from 30 to 60 image frames per second. Therefore, charge-carrier transport properties and signal lag are important factors for the development of X-ray sensors in fluoroscopy. In this study, in order to improve the characteristics of polycrystalline cadmium telluride (CdTe), CdTe films were prepared by thermal evaporation and RF sputtering. The deposition was conducted to form a CdTeO3 layer on top of a CdTe film. The role of CdTeO3 is not only to improve the charge-carrier transport by increasing the life-time but also to reduce the leakage current of CdTe films by acting as a passivation layer. In this paper, to establish the effect of a thin oxide layer on top of a CdTe film, the morphological and electrical properties including charge-carrier transport and signal lag were investigated by means of X-ray diffraction, X-ray photoemission spectroscopy, and resistivity measurements

  5. Improvement of the charge-carrier transport property of polycrystalline CdTe for digital fluoroscopy

    Science.gov (United States)

    Oh, K. M.; Heo, Y. J.; Kim, D. K.; Kim, J. S.; Shin, J. W.; Lee, G. H.; Nam, S. H.

    2014-05-01

    Minimizing the radiation impact to the patient is currently an important issue in medical imaging. Particularly, in case of X-ray fluoroscopy, the patient is exposed to high X-ray dose because a large number of images is required in fluoroscopic procedures. In this regard, a direct-conversion X-ray sensor offers the advantages of high quantum efficiency, X-ray sensitivity, and high spatial resolution. In particular, an X-ray sensor in fluoroscopy operates at high frame rate, in the range from 30 to 60 image frames per second. Therefore, charge-carrier transport properties and signal lag are important factors for the development of X-ray sensors in fluoroscopy. In this study, in order to improve the characteristics of polycrystalline cadmium telluride (CdTe), CdTe films were prepared by thermal evaporation and RF sputtering. The deposition was conducted to form a CdTeO3 layer on top of a CdTe film. The role of CdTeO3 is not only to improve the charge-carrier transport by increasing the life-time but also to reduce the leakage current of CdTe films by acting as a passivation layer. In this paper, to establish the effect of a thin oxide layer on top of a CdTe film, the morphological and electrical properties including charge-carrier transport and signal lag were investigated by means of X-ray diffraction, X-ray photoemission spectroscopy, and resistivity measurements.

  6. Photogeneration of free charge carriers in .pi.-conjugated polymers with bulky side groups

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Jex, M.; Pfleger, Jiří; Jung, J.

    Vilnius: Center for Physical Sciences and Technology, 2011. s. 124. ISBN 978-9955-634-36-2. [International Conference "Electronic and Related Properties of Organic Systems" /12./ - ERPOS-12. 11.07.2011-13.07.2011, Vilnius] R&D Projects: GA MŠk(CZ) OC10007; GA MŠk MEB051010; GA ČR(CZ) GAP205/10/2280 Institutional research plan: CEZ:AV0Z40500505 Keywords : charge carrier transport * polymer Subject RIV: BM - Solid Matter Physics ; Magnetism

  7. Evaluation of anisotropic charge carrier mobility of perylene single crystals by time-of-flight method

    Science.gov (United States)

    Kougo, Junichi; Ishikawa, Ken

    2016-03-01

    The charge carrier mobilities along the vertical and lateral directions of perylene platelet single crystals were measured by the time-of-flight (TOF) method. In the lateral directional measurement, the entire region between electrodes was irradiated to obtain measurable signals. The transient photocurrent was different from the conventional TOF measurements; hence, we developed an analytic method for lateral directional measurement. The electron mobilities along the thickness and lateral directions were 0.33 and 2.0 cm2·V-1·s-1 and the hole mobilities were 0.12 and 0.6 cm2·V-1·s-1, respectively.

  8. Inter-chain charge carrier mobility in conjugated polymers doped with polar additives

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr

    Prague : CESNET, 2010 - (Křenková, I.; Antoš, D.; Matyska, L.), s. 137-143 ISBN 978-80-904173-7-3 R&D Projects: GA ČR GA203/06/0285; GA AV ČR IAA401770601; GA MŠk MEB050815 Institutional research plan: CEZ:AV0Z40500505 Keywords : charge carrier mobility * switching * Marcus theory Subject RIV: CF - Physical ; Theoretical Chemistry https://www.metacentrum.cz/export/ sites /metacentrum/cs/about/results/yearbooks/MetaCentrum_Yearbook9_web.pdf

  9. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    Science.gov (United States)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent

  10. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-05-22

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  11. Charge carrier mobilities in organic semiconductors: crystal engineering and the importance of molecular contacts.

    Science.gov (United States)

    Bashir, Asif; Heck, Alexander; Narita, Akimitsu; Feng, Xinliang; Nefedov, Alexei; Rohwerder, Michael; Müllen, Klaus; Elstner, Marcus; Wöll, Christof

    2015-09-14

    We have conducted a combined experimental and theoretical study on the optimization of hexa-peri-hexabenzocoronene (HBC) as organic semiconductor. While orientations with high electronic coupling are unfavorable in the native liquid crystalline phase of HBC, we enforced such orientations by applying external constraints. To this end, self-assembled monolayers (SAMs) were formed by a non-conventional preparation method on an Au-substrate using electrochemical control. Within these SAMs the HBC units are forced into favorable orientations that cannot be achieved by unconstrained crystallization. For simulating the charge transport we applied a recently developed approach, where the molecular structure and the charge carrier are propagated simultaneously during a molecular dynamics simulation. Experiments as well as simulations are mutually supportive of an improved mobility in these novel materials. The implication of these findings for a rational design of future organic semiconductors will be discussed. PMID:26235109

  12. The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

    NARCIS (Netherlands)

    Hurley, Paul K.; Negara, Adi; Hemert, van Tom; Cherkaoui, Karim

    2009-01-01

    In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8x1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the den

  13. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    Energy Technology Data Exchange (ETDEWEB)

    Song, Linze; Shi, Qiang, E-mail: qshi@iccas.ac.cn [Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun, Beijing 100190 (China)

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  14. Effect of doping-- and field--induced charge carrier density on the electron transport in nanocrystalline ZnO

    OpenAIRE

    Hammer, Maria S; Rauh, Daniel; Deibel, Carsten; Dyakonov, Vladimir

    2008-01-01

    Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping were compared to the accu...

  15. Direct Observation of the Hole Carriers in DNA Photoinduced Charge Transport.

    Science.gov (United States)

    Harris, Michelle A; Mishra, Ashutosh Kumar; Young, Ryan M; Brown, Kristen E; Wasielewski, Michael R; Lewis, Frederick D

    2016-05-01

    The excited state behavior of DNA hairpins possessing a diphenylacetylenedicarboxamide (DPA) linker separated from a single guanine-cytosine (G-C) base pair by zero-to-six adenine-thymine (A-T) base pairs has been investigated. In the case of hairpins with zero or one A-T separating DPA and G, formation of both DPA anion radical (DPA(-•)) and G cation radical (G(+•)) are directly observed and characterized by their transient absorption and stimulated Raman spectra. For hairpins with two or more intervening A-T, the transient absorption spectra of DPA(-•) and the adenine polaron (An(+•)) are observed. In addition to characterization of the hole carriers, the dynamics of each step in the charge separation and charge recombination process as well as the overall efficiency of charge separation have been determined, thus providing a complete account of the mechanism and dynamics of photoinduced charge transport in these DNA hairpins. PMID:27082662

  16. Charge carrier concentration dependence of encounter-limited bimolecular recombination in phase-separated organic semiconductor blends

    Science.gov (United States)

    Heiber, Michael C.; Nguyen, Thuc-Quyen; Deibel, Carsten

    2016-05-01

    Understanding how the complex intermolecular configurations and nanostructure present in organic semiconductor donor-acceptor blends impacts charge carrier motion, interactions, and recombination behavior is a critical fundamental issue with a particularly major impact on organic photovoltaic applications. In this study, kinetic Monte Carlo (KMC) simulations are used to numerically quantify the complex bimolecular charge carrier recombination behavior in idealized phase-separated blends. Recent KMC simulations have identified how the encounter-limited bimolecular recombination rate in these blends deviates from the often used Langevin model and have been used to construct the new power mean mobility model. Here, we make a challenging but crucial expansion to this work by determining the charge carrier concentration dependence of the encounter-limited bimolecular recombination coefficient. In doing so, we find that an accurate treatment of the long-range electrostatic interactions between charge carriers is critical, and we further argue that many previous KMC simulation studies have used a Coulomb cutoff radius that is too small, which causes a significant overestimation of the recombination rate. To shed more light on this issue, we determine the minimum cutoff radius required to reach an accuracy of less than ±10 % as a function of the domain size and the charge carrier concentration and then use this knowledge to accurately quantify the charge carrier concentration dependence of the recombination rate. Using these rigorous methods, we finally show that the parameters of the power mean mobility model are determined by a newly identified dimensionless ratio of the domain size to the average charge carrier separation distance.

  17. Unusual features of charge carrier traps energy spectra in silicon organic polymers revealed by advanced TSL

    International Nuclear Information System (INIS)

    Highlights: ► The improved technique of the fractional TSL registration has been elaborated. ► The discrete energies of the charge carrier traps were observed for the PDHS film. ► The TSL activation energies correlate with the Raman Ag modes of the silicon chain. ► The width of TSL curve is generally due to the frequency factor dispersion. - Abstract: The peculiarities of charge carrier traps’ energy spectra in poly (di-n-hexylsilane) films have been studied by the enhanced fractional thermally stimulated luminescence (TSL) in the temperature range of 5–200 K. For the first time, we have shown that the majority of fractional energy values (>80%) is distributed between a set of horizontal energy levels suggesting a discontinuity of the traps’ energy spectrum. These data distinctly differ from the results of earlier studies where a quasilinear dependence of the activation energy on temperature was found. It is shown that the significant width of TSL bands originates from the dispersion of the frequency factor. It is also established that the values obtained for the activation energy correlate well with the frequencies of the symmetric Raman active Ag modes at 268 and 373 cm−1 of the silicon chain, which confirms the suggestion about the hole location on the segments of the silicon organic polymers backbone.

  18. Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors

    International Nuclear Information System (INIS)

    With the aim of understanding the relationships between organic small molecule field-effect transistors (FETs) and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies (average size and average roughness) of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit. (cross-disciplinary physics and related areas of science and technology)

  19. Real-time charge carrier motion in P3HT studied with Kelvin Probe Microscopy

    Science.gov (United States)

    Castaneda, Chloe; Zaidi, Alyina; Moscatello, Jason; Aidala, Katherine

    We have developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in organic semiconductor devices. We investigate P3HT (full name) in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin probe microscopy to record the potential over time, we can record how the charge carriers respond to changing the backgate voltage while the source and drain electrodes are grounded. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the P3HT film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We compare P3HT transistors with different fabrication procedures that are expected to change the trap distribution: no silanization of the oxide and no annealing, silanization and no annealing, and both silanization and annealing. By incrementally stepping the gate voltage, we probe different trap depths. The recorded change in potential over time is best fit by a double exponential, suggesting two physical mechanisms involved in screening. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  20. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    Science.gov (United States)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  1. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.

    2014-03-22

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  2. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  3. Self-Trapping of Charge Carriers in Semiconducting Carbon Nanotubes: Structural Analysis.

    Science.gov (United States)

    Adamska, Lyudmyla; Nazin, George V; Doorn, Stephen K; Tretiak, Sergei

    2015-10-01

    The spatial extent of charged electronic states in semiconducting carbon nanotubes with indices (6,5) and (7,6) was evaluated using density functional theory. It was observed that electrons and holes self-trap along the nanotube axis on length scales of about 4 and 8 nm, respectively, which localize cations and anions on comparable length scales. Self-trapping is accompanied by local structural distortions showing periodic bond-length alternation. The average lengthening (shortening) of the bonds for anions (cations) is expected to shift the G-mode frequency to lower (higher) values. The smaller-diameter nanotube has reduced structural relaxation due to higher carbon-carbon bond strain. The reorganization energy due to charge-induced deformations in both nanotubes is found to be in the 30-60 meV range. Our results represent the first theoretical simulation of self-trapping of charge carriers in semiconducting nanotubes, and agree with available experimental data. PMID:26722885

  4. Quantum states of charge carriers and longitudinal conductivity in double periodic n-type semiconductor lattice structures in electric field

    International Nuclear Information System (INIS)

    Quantum states of charge carriers in double periodic semiconductor superlattices of n-type quantum dots with Rashba spin–orbit coupling in an electron gas have been calculated in the one-electron approximation in the presence of mutually perpendicular electric and magnetic fields. For these structures in weak constant electric field, the solution to the quasi-classical kinetic Boltzmann equation shows that the states of carriers in magnetic Landau minibands with negative differential conductivity are possible

  5. Evidence of low-mobile charge carriers in YBa2Cu3O6+x

    International Nuclear Information System (INIS)

    The present work results reveal that the heterogeneous system is one of the forms of oxygen nonstoichiometry, realization of oxygen-deficient YBa2Cu3O6+x. It is noteworthy that NMP is formed above 980 C through labile oxygen redistribution and leaves the lattice of heavy ions invariable. Being a random microscopically inhomogeneous media the NW exhibits a number of anomalous dielectric properties absent for each separate component. Probably the degree of labile oxygen segregation in NMP is so high, that static permittivity of dielectric phase is completely determined by small polarons. On the other hand the NMP DF measurements provide an effective values of mobility and its activation energy giving a rough idea of small polarons dynamics. At low temperature the picture is complicated by nonequilibrium charge carriers excitation. To elaborate an adequate model of the entire phenomenon, more detailed information on oxygen positions and phase percolation threshold is necessary

  6. Bimodal behaviour of charge carriers in graphene induced by electric double layer.

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  7. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    Science.gov (United States)

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-01

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance. PMID:26579732

  8. Imaging the local density of free charge carriers in doped InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hauer, Benedikt; Taubner, Thomas [I. Institute of Physics (1A), RWTH Aachen Univerity, Sommerfeldstrasse 14, 52074 Aachen (Germany); Sladek, Kamil; Haas, Fabian; Schaepers, Thomas; Hardtdegen, Hilde [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich (Germany)

    2013-07-01

    Semiconductor nanowires are promising candidates for future nanoelectronic devices. While the bottom-up approach for their growth could simplify the device fabrication, their quantitative characterization remains challenging. We use scattering-type scanning near-field optical microscopy (s-SNOM) to investigate the local density of free electrons in Si-doped InAs nanowires grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). In s-SNOM the evanescent electric field at the apex of an illuminated tip is used to probe a sample at a strongly sub-wavelength resolution. This method is highly sensitive to variations in the sample permittivity around Re(ε) ∼ -2. The use of tunable mid-infrared lasers therefore allows addressing the plasma frequency of free charge carriers in highly doped nanowires. Here, we demonstrate that the sensitivity of s-SNOM is sufficient to detect a slight unintended variation in the carrier concentration during the growth process. Furthermore, using model calculations, we give an estimate of the local density of free electrons.

  9. Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

    Directory of Open Access Journals (Sweden)

    Petrović Jovana P.

    2009-01-01

    Full Text Available In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular and square (bimolecular is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V.

  10. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components

    International Nuclear Information System (INIS)

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively σ(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 107..108 V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  11. IR tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots[Infrared

    Energy Technology Data Exchange (ETDEWEB)

    Akhmetov, V.D.; Fateev, N.V.

    2000-07-01

    A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and 1 m in length. The method employs optical probing of ingots with laser-emitted radiation and includes laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot about 1 cm in size.

  12. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    Science.gov (United States)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  13. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong

    2016-04-15

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.

  14. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    Science.gov (United States)

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

    2016-01-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  15. Charged carrier spin dynamics in ZnO quantum wells and epilayers

    Science.gov (United States)

    Kim, Jungtaek; Puls, J.; Sadofev, S.; Henneberger, F.

    2016-01-01

    Longitudinal charged carrier spin dynamics is studied for ZnO quantum wells and epilayers using the optical transition of the negatively charged exciton X- and the neutral donor bound exciton D0X , respectively. The hole spin relaxation is derived from the optical orientation of X- and D0X photoluminescence, whereas the spin relaxation of the resident electrons and donor electrons is accessed via the bleaching of the spin selective excitation process. Hole spin relaxation times of τ1s ,h of 80 and 140 ps are found for D0X and X-, respectively, which are practically independent of a magnetic field B∥ applied along the ZnO c ⃗ axis. Much longer longitudinal electron spin relaxation times in the 1 μ s range are uncovered if the hyperfine interaction is suppressed by a proper B∥. A field strength of ≈2 mT is large enough proving the extremely small value of the Overhauser field in ZnO. This is related to the very restricted number of magnetic nuclei interacting with the electron inside the volume of the exciton complex.

  16. Charge carrier transport at the nanoscale: Electron and hole transport in self-assembled discotic liquid crystals: Mobile ionic charges in nanocomposite solid electrolytes

    NARCIS (Netherlands)

    Haverkate, L.A.

    2013-01-01

    This thesis explores some fundamental aspects of charge carrier transport at the nanoscale. The study is divided in two parts. In the first part, the structural, dynamical and vibrational properties of discotic liquid crystals are studied in relation to the potential of these self-assembled ‘mesopha

  17. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  18. Electrochemical studies of excited charge carriers with thin platinum film electronic devices in sulfuric and hydrochloric solution

    Energy Technology Data Exchange (ETDEWEB)

    Buerstel, Damian; Scheele, Michael; Barmscheid, Andreas; Stella, Kevin; Diesing, Detlef [Fakultaet fuer Chemie, Universitaet Duisburg-Essen, D-45117 Essen (Germany)

    2011-07-01

    Excited charge carriers induced by chemical processes like the adsorption or desorption of atomic hydrogen at metal surfaces have already been investigated under UHV conditions. These carriers can be detected by systems with an internal electric barrier, like MIM-(metal-insulator-metal), MIS- (metal-insulator-semiconductor) or MS- (metal-semiconductor) sensors. The internal barrier inside the sensors separates ground state carriers from excited carriers. It is an open question, whether electrochemical reactions on metal surfaces also evoke hot charge carriers. We study the electrochemical deposition of hydrogen (via H{sub upd}) on platinum and the oxidation of platinum in sulfuric and hydrochloric solution. As sensors Pt-TaOx-Ta, Pt-SiOx-Si and Pt-Si-sensors were used with 10-30 nm thick Pt films. By electrochemical cyclovoltametry and simultaneous recording of the current at the tantalum or silicon back electrode it is possible to detect voids (down to a fraction of 10{sup -3}) in the thin platinum film. 30 nm thick platinum films were found to cover the underlying layer completely. In this case the devices can be used to monitor deviations from the electronic equilibrium since excited carriers cause a device current through the internal barrier. Deviations from the electronic ground state were found in the case of the H{sub upd} formation.

  19. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Facet-selective charge carrier transport, deactivation mechanism and stabilization of a Cu2O photo-electro-catalyst.

    Science.gov (United States)

    Li, Yang; Yun, Xiaogang; Chen, Hong; Zhang, Wenqin; Li, Yongdan

    2016-03-14

    A facet-dependent photo-deactivation mechanism of Cu2O was verified and reported, which is caused by the facet-dependent charge carrier transport. During irradiation, the {100} and {110} crystal facets are selectively corroded by the photo-generated holes, while the {111} facets are comparatively stable. PMID:26898270

  1. Isoindigo-based polymer field-effect transistors: effects of selenophene-substitution on high charge carrier mobility.

    Science.gov (United States)

    Park, Kwang Hun; Cheon, Kwang Hee; Lee, Yun-Ji; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

    2015-05-11

    We show that selenophene-substitution can be an efficient synthetic strategy toward high charge carrier mobility of isoindigo (IID)-based copolymers when their side chains are optimized. A high mobility of 5.8 cm(2) V(-1) s(-1) is demonstrated by a strategically designed IID-based polymer, with both side-chain adjustment and selenophene-substitution. PMID:25871952

  2. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations.

    Science.gov (United States)

    Song, Linze; Shi, Qiang

    2015-05-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated. PMID:25956086

  3. Hall effect and charge carrier generation in Y1Ba2Cu3Ox

    International Nuclear Information System (INIS)

    The Hall coefficient, and hence the charge carrier density, of the system of Y1Ba2Cu3Ox was measured at room temperature as a function of oxygen content, x, in its entire homogeneity range (6 p/σn > 70) and of extrinsic origin for x > ∼ 6.37, below which the electron contribution grows appreciably, and hole generation mechanisms differ depending on crystal structure: one hole is generated for every oxygen atom added in the orthorhombic structure (x > ∼ 6.5) and for every two oxygen atoms added in the tetragonal structure (x 2(g) = O'i + h and O2(g) = (Oi,Oi)' + h, respectively, are proposed as responsible for the hole generation, and their equilibrium constants are evaluated with the reaction enthalpies of 0.75 ± 0.05 and 2.7 ± 0.2 eV, respectively. Based on these data, predictions about such properties as the oxygen potential dependencies of isothermal conductivity are compared with reported results, and the numerical values for hole mobility are extracted. In this paper, other proposed redox reactions are discussed in light of the present findings

  4. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    International Nuclear Information System (INIS)

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density

  5. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    Energy Technology Data Exchange (ETDEWEB)

    Barone, C., E-mail: cbarone@unisa.it; Mauro, C.; Pagano, S. [Dipartimento di Fisica “E.R. Caianiello” and CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano, Salerno (Italy); Landi, G.; Neitzert, H. C. [Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno (Italy)

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  6. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    Science.gov (United States)

    Barone, C.; Landi, G.; Mauro, C.; Neitzert, H. C.; Pagano, S.

    2015-10-01

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  7. Plasma etching and its effect on minority charge carrier lifetimes and crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, S.; Lautenschlager, H.; Emanuel, G.; Luedemann, R. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany)

    2000-07-01

    Reactive ion etching (RIE), microwave enhanced RIE (MW-RIE), and microwave downstream etching (MWDSE) are investigated in terms of plasma-induced damage and its impact on minority charge carrier lifetimes in p-type silicon and on silicon solar cells. Ion bombardment and the gas mixture are found to be the crucial parameters in order to control the plasma-induced damage caused by SF{sub 6}/O{sub 2} plasma etching. RIE as well as MW-RIE processes can be optimised in a way that only minimum damage occurs. It may be annealed during temperature steps in the solar cell process, though. Only by dispensing with ion bombardment as in MWDSE plasma-induced damage can be completely avoided. Surface recombination velocities of S<10 cm/s are measured on 1 {omega}cm float zone silicon after MWDSE and SiN{sub x} passivation. MWDSE can therefore be used to substitute standard wet chemical cleaning of wafer surfaces without any loss in solar cell performance. (orig.)

  8. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya

    2015-02-12

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

  9. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    International Nuclear Information System (INIS)

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  10. Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

    KAUST Repository

    Mondal, Rajib

    2011-01-01

    A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.

  11. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Science.gov (United States)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  12. Influence of Surface Recombination on Charge-Carrier Kinetics in Organic Bulk Heterojunction Solar Cells with Nickel Oxide Interlayers

    Science.gov (United States)

    Wheeler, Scot; Deledalle, Florent; Tokmoldin, Nurlan; Kirchartz, Thomas; Nelson, Jenny; Durrant, James R.

    2015-08-01

    The choice of electrode for organic photovoltaics is known to be of importance to both device stability and performance, especially regarding the open-circuit voltage (VOC ). Here we show that the work function of a nickel oxide anode, varied using an O2 plasma treatment, has a considerable influence on the open-circuit voltage VOC of an organic solar cell. We probe recombination in the devices using transient photovoltage and charge extraction to determine the lifetime as a function of charge-carrier concentration and compare the experimental results with numerical drift-diffusion simulations. This combination of experiment and simulations allows us to conclude that the variations in VOC are due to a change in surface recombination, localized at the NiO anode, although only a small change in carrier lifetime is observed.

  13. On the definition of dielectric permittivity for media with temporal dispersion in the presence of free charge carriers

    International Nuclear Information System (INIS)

    We show that in the presence of free charge carriers the definition of the frequency-dependent dielectric permittivity requires additional regularization. As an example, the dielectric permittivity of the Drude model is considered and its time-dependent counterpart is derived and analyzed. The respective electric displacement cannot be represented in terms of the standard Fourier integral. The regularization procedure allowing the circumvention of these difficulties is suggested. For the purpose of comparison it is shown that the frequency-dependent dielectric permittivity of insulators satisfies all rigorous mathematical criteria. This permits us to conclude that in the presence of free charge carriers the concept of dielectric permittivity is not as well defined as for insulators and we make a link to widely discussed puzzles in the theory of thermal Casimir force which might be caused by the use of this kind of permittivities.

  14. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya

    2015-08-10

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  15. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge 

    Directory of Open Access Journals (Sweden)

    Arzani G

    2015-07-01

    vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway significantly reduced oral bioavailability of CRV niosomes. Overall twofold enhancement in bioavailability in comparison with drug suspension confers the potential of niosomes as suitable carriers for improved oral delivery of CRV. Keywords: niosomes, bile salts, surface charge, bioavailability, oral delivery, lymphatic transport 

  16. Charge carrier trapping in highly-ordered lyotropic chromonic liquid crystal films based on ionic perylene diimide derivatives

    OpenAIRE

    Soroka, Pavlo V.; Vakhnin, Alexander Yu; Skryshevskiy, Yuriy A; Boiko, Oleksandr P.; Anisimov, Maksim I; Slominskiy, Yuriy L; Nazarenko, Vassili G.; Genoe, Jan; Kadashchuk, Andrey

    2014-01-01

    Charge carrier trapping in thin films of lyotropic chromonic liquid crystals (LCLCs) based on ionic perylene diimide derivative and in chemically-similar neutral N,N′-dipentyl-3,4,9,10-perylene-dicarboximide (PTCDI-C5) films is investigated by thermally-stimulated luminescence (TSL) technique. The LCLC films comprise elongated molecular aggregates featuring a long-range orientational order. The obtained results provide direct evidence for the improved energetic ordering (smaller effective ene...

  17. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    International Nuclear Information System (INIS)

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  18. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Cheng, Gary J., E-mail: gjcheng@purdue.edu [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Zhang, Martin Y. [School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Wang, Yuefeng [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Das, Suprem R.; Bhat, Venkataprasad S. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); Huang, Fuqiang [Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050 (China)

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  19. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released t

  20. Charge and excitation dynamics in semiconducting polymer layers doped with emitters and charge carrier traps; Ladungstraeger- und Anregungsdynamik in halbleitenden Polymerschichten mit eingemischten Emittern und Ladungstraegerfallen

    Energy Technology Data Exchange (ETDEWEB)

    Jaiser, F.

    2006-06-15

    Light-emitting diodes generate light from the recombination of injected charge carriers. This can be obtained in inorganic materials. Here, it is necessary to produce highly ordered crystalline structures that determine the properties of the device. Another possibility is the utilization of organic molecules and polymers. Based on the versatile organic chemistry, it is possible to tune the properties of the semiconducting polymers already during synthesis. In addition, semiconducting polymers are mechanically flexible. Thus, it is possible to construct flexible, large-area light sources and displays. The first light-emitting diode using a polymer emitter was presented in 1990. Since then, this field of research has grown rapidly up to the point where first products are commercially available. It has become clear that the properties of polymer light-emitting diodes such as color and efficiency can be improved by incorporating multiple components inside the active layer. At the same time, this gives rise to new interactions between these components. While components are often added either to improve the charge transport or to change the emission, it has to made sure that other processes are not influenced in a negative manner. This work investigates some of these interactions and describes them with simple physical models. First, blue light-emitting diodes based on polyfluorene are analyzed. This polymer is an efficient emitter, but it is susceptible to the formation of chemical defects that can not be suppressed completely. These defects form electron traps, but their effect can be compensated by the addition of hole traps. The underlying process, namely the changed charge carrier balance, is explained. In the following, blend systems with dendronized emitters that form electron traps are investigated. The different influence of the insulating shell on the charge and energy transfer between polymer host and the emissive core of the dendrimers is examined. In the

  1. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl

    2013-01-31

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  2. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-04-07

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  3. Demonstration of the difference in the Casimir force for samples with different charge-carrier densities.

    Science.gov (United States)

    Chen, F; Klimchitskaya, G L; Mostepanenko, V M; Mohideen, U

    2006-10-27

    A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good agreement is found. Our experiment demonstrates that by changing the carrier density of the semiconductor plate by several orders of magnitude it is possible to modify the Casimir interaction. This result may find applications in nanotechnology. PMID:17155446

  4. Localized Charge Carrier Transport Properties of Zn1- x Ni x O/NiO Two-Phase Composites

    Science.gov (United States)

    Joshi, D. C.; Dasari, K.; Nayak, S.; Palai, R.; Suresh, P.; Thota, S.

    2016-04-01

    We report the localized charge carrier transport of two-phase composite Zn1- x Ni x O/NiO (0 ≤ x ≤ 1) using the temperature dependence of ac-resistivity ρ ac(T) across the Néel temperature T N (= 523 K) of nickel oxide. Our results provide strong evidence to the variable range hopping of charge carriers between the localized states through a mechanism involving spin-dependent activation energies. The temperature variation of carrier hopping energy ɛ h(T) and nearest-neighbor exchange-coupling parameter J ij(T) evaluated from the small poleron model exhibits a well-defined anomaly across T N. For all the composite systems, the average exchange-coupling parameter (J ij)AVG nearly equals to 70 meV which is slightly greater than the 60-meV exciton binding energy of pure zinc oxide. The magnitudes of ɛ h (˜0.17 eV) and J ij (˜11 meV) of pure NiO synthesized under oxygen-rich conditions are consistent with the previously reported theoretical estimation based on Green's function analysis. A systematic correlation between the oxygen stoichiometry and, ɛ h(T) and J ij(T) is discussed.

  5. Charge-carrier dynamics and Coulomb effects in semiconductor tetrapods; Ladungstraegerdynamik und Couloumbeffekte in Halbleiter-Tetrapods

    Energy Technology Data Exchange (ETDEWEB)

    Mauser, Christian

    2011-02-03

    In this thesis the Coulomb interaction and its influence on localization effects and dynamics of charge carriers in semiconductor nanocrystals were studied. In the studied nanostructures it deals with colloidal tetrapod heterostructures, which consist of a cadmium selenide (CdSe) core and four tetraedrical grown cadmium sulfide (CdS) respectively cadmium telluride (CdTe) legs, which exhibit a type-I respectively type-II band transition. The dynamics and interactions were studied by means of photoluminescence (PL) and absorption measurements both on the ensemble and on single nanoparticles, as well as time-resolved PL and transient absorption spectroscopy. Additionally theoretical simulations of the wave-function distributions were performed, which are based on the effective-mass approximation. The special band structure of the CdSe/CdS tetrapods offers a unique possibility to study the Coulomb interaction. The flat conduction band in these heterostructures makes the electron via the Coulomb interaction sensitive to the localization position of the hole within the structure. The valence band has instead a potential maximum in the CdSe, which leads to a directed localization of the hole and the photoluminescence of the core. Polarization-resolved measurements showed hereby an anisotropy of the photoluminescence, which could be explained by means of simulations of the wave-function distribution with an asymmetry at the branching point. Charge-carrier localization occur mainly both in longer structures and in trap states in the CdS leg and can be demonstrated in form of a dual emission from a nanocrystal. The charge-carrier dynamics of electron and hole in tetrapods is indeed coupled by the Coulomb interaction, however it cannot be completely described in an exciton picture. The coupled dynamics and the Coulomb interaction were studied concerning a possible influence of the geometry in CdSe/CdS nanorods and compared with those of the tetrapods. The interactions of the

  6. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  7. Electrically induced phase transition in α -(BEDT-TTF)2I3 : Indications for Dirac-like hot charge carriers

    Science.gov (United States)

    Peterseim, T.; Ivek, T.; Schweitzer, D.; Dressel, M.

    2016-06-01

    The two-dimensional organic conductor α -(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO=135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from a low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO, the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T >TCO . Well into the insulating state, however, at T =80 K , the spectral response evidences a completely different electronically induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge carriers with a linear dispersion of the electronic bands found in α -(BEDT-TTF)2I3 at high pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.

  8. Effect of Mg doping on the structural and free-charge carrier properties of InN films

    International Nuclear Information System (INIS)

    We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 1018 cm−3 to 3.9 × 1021 cm−3. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 1018 cm−3 ≲ [Mg] ≲ 9.0 × 1019 cm−3. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed

  9. Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

    International Nuclear Information System (INIS)

    A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm2/Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

  10. Charge carrier mobility in poly[methyl(phenyl)silylene] studied by time-resolved terahertz spectroscopy and molecular modeling

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Kratochvílová, Irena; Kužel, Petr; Šebera, Jakub; Kochalska, Anna; Nožár, Juraj; Nešpůrek, Stanislav

    2011-01-01

    Roč. 13, č. 7 (2011), s. 2850-2856. ISSN 1463-9076 R&D Projects: GA ČR(CZ) GP202/09/P099; GA ČR GA203/08/1594; GA AV ČR KAN401770651; GA MŠk LC512; GA ČR(CZ) GAP304/10/1951 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40500505 Keywords : molecular electronics * THz spectroscopy * charge carrier mobility Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.573, year: 2011

  11. Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers

    OpenAIRE

    Korinek, M.; Schnabel, M; Canino, M.; Kozak, M.; Trojanek, F.; Salava, J.; Löper, P.; Janz, S; Summonte, C.; Maly, P.

    2013-01-01

    The influence of boron (B)-doping and remote plasma hydrogen passivation on the photoexcited charge carrier recombination in silicon nanocrystal/SiC multilayers was investigated in detail. The samples were prepared by high temperature annealing of amorphous (intrinsic and B-doped) Si1-xCx/SiC superlattices. The photoluminescence (PL) intensity of samples with B-doped silicon rich carbide layers was found to be up to two orders of magnitude larger and spectrally red shifted in comparison with ...

  12. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    CERN Document Server

    Hofmann, Felix J; Lupton, John M

    2016-01-01

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process, or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The resul...

  13. Chemical vapour deposition diamond. Charge carrier movement at low temperatures and use in time-critical applications

    International Nuclear Information System (INIS)

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, over laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  14. Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

    CERN Document Server

    Jansen, Hendrik; Pernegger, Heinz

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  15. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    Science.gov (United States)

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials. PMID:26972104

  16. Determination of Effective Stability Constants of Ion-Carrier Complexes in Ion Selective Nanospheres with Charged Solvatochromic Dyes.

    Science.gov (United States)

    Xie, Xiaojiang; Bakker, Eric

    2015-11-17

    Ionophores are widely used ion carriers in ion selective sensors. The effective stability constant (β) is a key physical parameter providing valuable guidelines to the design of ionophores and carrier-based ion selective sensors. The β value of ion-carrier complex in plasticized poly(vinyl chloride) (PVC) membranes and solutions have been determined in the past by various techniques, but most of them are difficult to implement at the nanoscale owing to the ultrasmall sample volume. A new methodology based on charged solvatochromic dyes is introduced here for the first time to determine β values directly within ion selective nanospheres. Four ionophores with different selectivities toward Na(+), K(+), Ca(2+), and H(+), respectively, are successfully characterized in nanospheres composed of triblock copolymer Pluronic F-127 and bis(2-ethylhexyl) sebacate. The values determined in the nanospheres are smaller compared with those in plasticized PVC membranes, indicating a more polar nanosphere microenvironment and possible uneven distribution of the sensing components in the interfacial region. PMID:26502342

  17. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    International Nuclear Information System (INIS)

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s

  18. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Hyun-Sik; Khang, Dahl-Young, E-mail: dykhang@yonsei.ac.kr

    2015-08-31

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s.

  19. Determination of energy band diagram and charge carrier mobility of white emitting polymer from optical, electrical and impedance spectroscopy

    International Nuclear Information System (INIS)

    A single-layer white polymer light-emitting device (WPLED) has been fabricated using spin coating technique. The device was constructed as ITO/PEDOT:PSS(50 nm)/SPW-111(50 nm)/LiF(1 nm)/Al(100 nm). Indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) are used as the transparent anode. SPW-111 is fabricated as a white emissive layer and lithium fluoride (LiF) and aluminum (Al) are used as reflecting cathode. Energy band diagram of the device was estimated from a combination of ultraviolet–visible (UV–vis) and current–voltage (J–V) analyses. Charge carrier mobility (μ) of PLED was evaluated using negative differential susceptance (−ΔB) method from impedance spectroscopy (IS) analysis. The calculated μ of the SPW-111 device is in the magnitude of 10−6 cm2/V/s. - Highlights: • Single layer PLED has been fabricated with spin-coating technique and device performance has been evaluated. • Energy band diagram of the SPW-111 is estimated from optical and electrical analyses. • Charge carrier mobility of the SPW-111 materials is obtained by impedance spectroscopy

  20. Charge Carrier Transport Through the Interface Between Hybrid Electrodes and Organic Materials in Flexible Organic Light Emitting Diodes.

    Science.gov (United States)

    Zhou, Huanyu; Cheong, Hahn-Gil; Park, Jin-Woo

    2016-05-01

    We investigated the electronic properties of composite-type hybrid transparent conductive electrodes (h-TCEs) based on Ag nanowire networks (AgNWs) and indium tin oxide (ITO). These h-TCEs were developed to replace ITO, and their mechanical flexibility is superior to that of ITO. However, the characteristics of charge carriers and the mechanism of charge-carrier transport through the interface between the h-TCE and an organic material are not well understood when the h-TCE is used as the anode in a flexible organic light-emitting diode (f-OLED). AgNWs were spin coated onto polymer substrates, and ITO was sputtered atop the AgNWs. The electronic energy structures of h-TCEs were investigated by ultraviolet photoelectron spectroscopy. f-OLEDs were fabricated on both h-TCEs and ITO for comparison. The chemical bond formation at the interface between the h-TCE and the organic layer in f-OLEDs was investigated by X-ray photoelectron spectroscopy. The performances of f-OLEDs were compared based on the analysis results. PMID:27483896

  1. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    Science.gov (United States)

    Pal, P.; Ghosh, A.

    2016-07-01

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  2. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    Science.gov (United States)

    Hofmann, Felix J.; Vogelsang, Jan; Lupton, John M.

    2016-06-01

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the opposite: the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The results are of interest to developing a microscopic understanding of the intrinsic charge-exciton quenching interaction in devices.

  3. Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1-x/InP quantum well detectors

    Science.gov (United States)

    Vashisht, Geetanjali; Dixit, V. K.; Porwal, S.; Kumar, R.; Sharma, T. K.; Oak, S. M.

    2016-03-01

    The effect of charge carrier localization resulting in "S-shaped" temperature dependence of the photoluminescence peak energy of InAsxP1-x/InP quantum wells (QWs) is distinctly revealed by the temperature dependent surface photo voltage (SPV) and photoconductivity (PC) processes. It is observed that the escape efficiency of carriers from QWs depends on the localization energy, where the carriers are unable to contribute in SPV/PC signal below a critical temperature. Below the critical temperature, carriers are strongly trapped in the localized states and are therefore unable to escape from the QW. Further, the critical temperature increases with the magnitude of localization energy of carriers. Carrier localization thus plays a pivotal role in defining the operating temperature range of InAsxP1-x/InP QW detectors.

  4. Electron-phonon coupling in crystalline organic semiconductors: Microscopic evidence for nonpolaronic charge carriers

    OpenAIRE

    Vukmirovic N.; Bruder C.; Stojanovic V.M.

    2012-01-01

    We consider electron(hole)-phonon coupling in crystalline organic semiconductors, using naphthalene for our case study. Employing a first-principles approach, we compute the changes in the self-consistent Kohn-Sham potential corresponding to different phonon modes and go on to obtain the carrier-phonon coupling matrix elements (vertex functions). We then evaluate perturbatively the quasiparticle spectral residues for electrons at the bottom of the lowest-unoccupied- (LUMO) and holes at the to...

  5. Ionic liquid based lithium battery electrolytes: charge carriers and interactions derived by density functional theory calculations.

    Science.gov (United States)

    Angenendt, Knut; Johansson, Patrik

    2011-06-23

    The solvation of lithium salts in ionic liquids (ILs) leads to the creation of a lithium ion carrying species quite different from those found in traditional nonaqueous lithium battery electrolytes. The most striking differences are that these species are composed only of ions and in general negatively charged. In many IL-based electrolytes, the dominant species are triplets, and the charge, stability, and size of the triplets have a large impact on the total ion conductivity, the lithium ion mobility, and also the lithium ion delivery at the electrode. As an inherent advantage, the triplets can be altered by selecting lithium salts and ionic liquids with different anions. Thus, within certain limits, the lithium ion carrying species can even be tailored toward distinct important properties for battery application. Here, we show by DFT calculations that the resulting charge carrying species from combinations of ionic liquids and lithium salts and also some resulting electrolyte properties can be predicted. PMID:21591707

  6. Temperature dependence of the charge carrier mobility in gated quasi-one-dimensional systems

    OpenAIRE

    Gallos, L. K.; Movaghar, B.; Siebbeles, L.D.A.

    2003-01-01

    The many-body Monte Carlo method is used to evaluate the frequency dependent conductivity and the average mobility of a system of hopping charges, electronic or ionic on a one-dimensional chain or channel of finite length. Two cases are considered: the chain is connected to electrodes and in the other case the chain is confined giving zero dc conduction. The concentration of charge is varied using a gate electrode. At low temperatures and with the presence of an injection barrier, the mobilit...

  7. Exciton and charge carrier dynamics in few-layer WS2

    Science.gov (United States)

    Vega-Mayoral, Victor; Vella, Daniele; Borzda, Tetiana; Prijatelj, Matej; Tempra, Iacopo; Pogna, Eva A. A.; Dal Conte, Stefano; Topolovsek, Peter; Vujicic, Natasa; Cerullo, Giulio; Mihailovic, Dragan; Gadermaier, Christoph

    2016-03-01

    Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better separation of the spectral features compared to MoS2 allows us to resolve a previously undetected process: these charges diffuse through the samples and get trapped at defects, such as flake edges or grain boundaries, causing an appreciable change of their transient absorption spectra. This finding opens the way to further studies of traps in TMD samples with different defect contents.Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better

  8. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    Science.gov (United States)

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-01

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc. PMID:27371816

  9. Extraction of photo-generated charge carriers from polymer-fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Koster, LJA; Mihailetchi, VD; Blom, PWM; Heremans, PL; Muccini, M; Hofstraat, H

    2004-01-01

    Two models describing charge extraction from insulators have been used to interpret the experimental photocurrent data of 20:80 wt% blends of poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-p-phenylene vinylene) (MDMO-PPV) and [6,6]phenyl C-61,-butyric acid methyl ester (PCBM) bulk heterojunction solar ce

  10. Theoretical investigation of fluorination effect on the charge carrier transport properties of fused anthra-tetrathiophene and its derivatives.

    Science.gov (United States)

    Yin, Jun; Chaitanya, Kadali; Ju, Xue-Hai

    2016-03-01

    The crystal structures of known anthra-tetrathiophene (ATT) and its three fluorinated derivatives (ATT1, ATT2 and ATT3) were predicted by the Monte Carlo-simulated annealing method with the embedded electrostatic potential (ESP) charges. The most stable crystal structures were further optimized by the density functional theory with the dispersion energy (DFT-D) method. In addition, the effect of the electron-withdrawing fluorine atoms on the molecular geometry, molecular stacking, electronic and transport properties of title compounds were investigated by the density functional theory and the incoherent charge-hopping model. The calculated results show that the introduction of fluorine atoms does not affect the molecular planarity but decreases the HOMO-LUMO gap, which is beneficial to electron injection and provides more charge carrier stabilization. The improved electron mobility from ATT to ATT3 is attributed to the favorable molecular packing with strong π-π interaction and the short stacking distance. ATT2 and ATT3 exhibit remarkable angular dependence of mobilities and anisotropic behaviors. The band structures reveal that all the paths with larger transfer integrals are along the directions of large dispersions in the valence band (VB) and conduction band (CB). ATT3 has the largest electron mobility (0.48 cm(2)V(-1)s(-1)) among the four compounds, indicating that fluorination is an effective approach to improve electron transport. PMID:26774641

  11. Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

    International Nuclear Information System (INIS)

    Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of traps refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL

  12. Application of helicon waves for contracthes local testing of homogeneity of certain narrow-band semiconductors according to density and mobility of free charge carriers

    International Nuclear Information System (INIS)

    Application of practically the single contactless local method today for determination of concentration and charge carrier mobility in narrow-band semiconductors of the CdxHg1-xTe(x∼0.2) type using helicons-circulating polarized electromagnetic waves propagating in the magnetized plasma of free charge carriers along the external magnetic field, is described. An installation for local testing of concentration and charge carrier mobility in narrow-band semiconductors is constructed and it has been used to study homogeneity of ternary CdxHg1-xTe solid solution samples of the n-type of conductivity at 77 K. This installation is shown to allow to carry out contactless expressive measurements of electrical properties of CdxHg1-xTe of n-type conductivity of high accuracy and locality, that gives the possibility to use it for testing material prepared in industry

  13. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers

    Science.gov (United States)

    Sun, Baichuan; Barnard, Amanda S.

    2016-07-01

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove

  14. Feature of polaronic charge carriers in polysilanes: Experimental and theoretical approach

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Kochalska, Anna; Nožár, Juraj; Kadashchuk, A.; Fishchuk, I. I.; Sworakowski, J.; Kajzar, F.

    2010-01-01

    Roč. 521, - (2010), s. 72-83. ISSN 1542-1406. [International Conference on Frontiers of Polymers and Advanced Materials /10./. Santiago, 27.09.2009-02.10.2009] R&D Projects: GA AV ČR IAA100100622; GA AV ČR KAN400720701 Institutional research plan: CEZ:AV0Z40500505 Keywords : binding energy * charge mobility * hopping transport Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.543, year: 2010

  15. Charge carrier trapping in highly-ordered lyotropic chromonic liquid crystal films based on ionic perylene diimide derivatives

    Science.gov (United States)

    Soroka, Pavlo V.; Vakhnin, Alexander Yu.; Skryshevskiy, Yuriy A.; Boiko, Oleksandr P.; Anisimov, Maksim I.; Slominskiy, Yuriy L.; Nazarenko, Vassili G.; Genoe, Jan; Kadashchuk, Andrey

    2014-12-01

    Charge carrier trapping in thin films of lyotropic chromonic liquid crystals (LCLCs) based on ionic perylene diimide derivative and in chemically-similar neutral N,N'-dipentyl-3,4,9,10-perylene-dicarboximide (PTCDI-C5) films is investigated by thermally-stimulated luminescence (TSL) technique. The LCLC films comprise elongated molecular aggregates featuring a long-range orientational order. The obtained results provide direct evidence for the improved energetic ordering (smaller effective energetic disorder) in aggregated LCLC films as compared to conventional PTCDI-C5 films. The width of the density-of-state distribution of 0.09 eV and 0.13 eV was estimated for the LCLC and PTCDI-C5 films, respectively. Relatively small effective energetic disorder in LCLC films is ascribed to formation of macroscopically larger LCLC aggregates.

  16. Magnetic dipole self-organization of charge carriers in high-temperature superconductors and kinetics of phase transformation

    CERN Document Server

    Voronov, A V; Shuvalov, V V

    2001-01-01

    The phenomenological model, describing the magnetic dipole self-organization of charge carriers (formation of so-called stripe-structures and energy gap in the states spectrum), is designed for interpreting the data on the nonstationary nonlinear spectroscopy of the high-temperature superconductors. It is shown that after fast heating of the superconducting sample the kinetics of the subsequent phase transition depends on the initial temperature T. The destruction of the stripe-structures at low overheating T* < T < T sub m approx = (1.4-1.5)T*, whereby T sub c and T* approx = T sub c are the temperatures of transition into the superconducting state and formation of the stripe-structures occurs slowly (the times above 10 sup - sup 9 s) in spite of practically instantaneous disappearance of the superconductivity

  17. Infrared spectroscopic studies on the cluster size dependence of charge carrier structure in nitrous oxide cluster anions

    Science.gov (United States)

    Thompson, Michael C.; Weber, J. Mathias

    2016-03-01

    We report infrared photodissociation spectra of nitrous oxide cluster anions of the form (N2O)nO- (n = 1-12) and (N2O)n- (n = 7-15) in the region 800-1600 cm-1. The charge carriers in these ions are NNO2- and O- for (N2O)nO- clusters with a solvation induced core ion switch, and N2O- for (N2O)n- clusters. The N-N and N-O stretching vibrations of N2O- (solvated by N2O) are reported for the first time, and they are found at (1595 ± 3) cm-1 and (894 ± 5) cm-1, respectively. We interpret our infrared spectra by comparison with the existing photoelectron spectroscopy data and with computational data in the framework of density functional theory.

  18. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  19. Empirical in operando analysis of the charge carrier dynamics in hematite photoanodes by PEIS, IMPS and IMVS.

    Science.gov (United States)

    Klotz, Dino; Ellis, David Shai; Dotan, Hen; Rothschild, Avner

    2016-09-14

    In this Perspective, we introduce intensity modulated photocurrent/voltage spectroscopy (IMPS and IMVS) as powerful tools for the analysis of charge carrier dynamics in photoelectrochemical (PEC) cells for solar water splitting, taking hematite (α-Fe2O3) photoanodes as a case study. We complete the picture by including photoelectrochemical impedance spectroscopy (PEIS) and linking the trio of PEIS, IMPS and IMVS, introduced here as photoelectrochemical immittance triplets (PIT), both mathematically and phenomenologically, demonstrating what conclusions can be extracted from these measurements. A novel way of analyzing the results by an empirical approach with minimal presumptions is introduced, using the distribution of relaxation times (DRT) function. The DRT approach is compared to conventional analysis approaches that are based on physical models and therefore come with model presumptions. This work uses a thin film hematite photoanode as a model system, but the approach can be applied to other PEC systems as well. PMID:27524381

  20. Low Exciton-Phonon Coupling, High Charge Carrier Mobilities, and Multiexciton Properties in Two-Dimensional Lead, Silver, Cadmium, and Copper Chalcogenide Nanostructures.

    Science.gov (United States)

    Ding, Yuchen; Singh, Vivek; Goodman, Samuel M; Nagpal, Prashant

    2014-12-18

    The development of two-dimensional (2D) nanomaterials has revealed novel physical properties, like high carrier mobilities and the tunable coupling of charge carriers with phonons, which can enable wide-ranging applications in optoelectronic and thermoelectric devices. While mechanical exfoliation of graphene and some transition metal dichalcogenides (e.g., MoS2, WSe2) has enabled their fabrication as 2D semiconductors and integration into devices, lack of similar syntheses for other 2D semiconductor materials has hindered further progress. Here, we report measurements of fundamental charge carrier interactions and optoelectronic properties of 2D nanomaterials made from two-monolayers-thick PbX, CdX, Cu2X, and Ag2X (X = S, Se) using colloidal syntheses. Extremely low coupling of charge carriers with phonons (2-6-fold lower than bulk and other low-dimensional semiconductors), high carrier mobilities (0.2-1.2 cm(2) V(-1) s(-1), without dielectric screening), observation of infrared surface plasmons in ultrathin 2D semiconductor nanostructures, strong quantum-confinement, and other multiexcitonic properties (different phonon coupling and photon-to-charge collection efficiencies for band-edge and higher-energy excitons) can pave the way for efficient solution-processed devices made from these 2D nanostructured semiconductors. PMID:26273976

  1. ZnO/aSi interface charge carriers transport in Li-ion secondary cell anodes

    International Nuclear Information System (INIS)

    Electron and Li-ion transport at the n-ZnO/p-aSi (amorphous Si) heterojunction interface is analyzed for the initial charging conditions of a secondary battery anode. The ohmic and diode-type current–voltage characteristics of the junction are investigated for varying doping levels of aSi and ZnO layers. The interface potential barrier impacts the electrons supply to control the Li + ZnO → Li2O + LixZn reaction. The interface electric field could exceed ∼105 V cm−1 and draws in Li ions from zinc oxide into the silicon layer. Relatively low-level doping (∼1018 cm−3) of the semiconductors is preferred for the optimum draw-in effect. During the initial charging, when the Li content in ZnO (as substitution LiZn acceptors) does not exceed the solubility level (∼1019 cm−3), the overall doping maintains the n-type, and the interface electric field continues to draw in Li ions towards silicon. Under further increase of Li content at interstitials, the layer conductivity is converted, and the heterojunction becomes n−–n–p (or even p–n–p) type. During the subsequent transport of Li ions, the interface potential barrier diminishes and vanishes, and the current–voltage characteristics become ohmic. The importance of doping level control for both the materials is emphasized. The results are applicable for interface engineering in LIB anodes. - Highlights: • n-ZnO/p-aSi interface potential barrier controls electrons supply for Li coupling reaction. • The interface electric field exceeds 105 V cm−1 to draws in Li ions from ZnO into aSi. • n-ZnO/p-aSi heterojunction could have ohmic or diode type behavior under initial charging

  2. Controlling charge carrier injection in organic electroluminescent devices via ITO substrate modification

    CERN Document Server

    Day, S

    2001-01-01

    and the ITO substrate was found to shift the work function of the electrode, and so modify the barrier to hole injection. Scanning Kelvin probe measurements show that the ITO work function is increased by 0.25 eV with a film of TNAP, while a C sub 6 sub 0 film is found to reduce the work function by a comparable amount. The former has been attributed to a charge-transfer effect resulting in Fermi level alignment between the ITO and the TNAP layer, however the latter is believed to result from both charge transfer and a covalent interaction between C sub 6 sub 0 and ITO. The performance of devices incorporating these modified ITO electrode are rationalised in terms of the work function modification, film thicknesses and the hole transport properties of the two films. Competition between the induced work function change and the increasingly significant tunnelling barrier with thickness means that device performance is not as good as that provided by the SAMs. Direct processing of the ITO substrate has also been...

  3. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    Energy Technology Data Exchange (ETDEWEB)

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R., E-mail: wicalder@ing.uchile.cl [Department of Mechanical Engineering, University of Chile, Beauchef 850, Santiago (Chile)

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  4. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    International Nuclear Information System (INIS)

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  5. Characterization of the charge-carrier transport properties of IIa-Tech SC diamond for radiation detection applications

    International Nuclear Information System (INIS)

    Single crystal (SC) diamond has since years demonstrated its interest for the fabrication of radiation detectors, especially where the material properties are providing superior interests with respect to the detection application. Among the industrial suppliers able to provide on a commercial basis high-grade single crystal diamond, IIa-Tech has recently appeared in the market as a new player. The aim of this paper is to assess the quality of one SC sample when characterized under α-particles for the measurement of its carrier transport properties. We observed that full charge collection could be observed at biases as low as 0.11 V/μm with no space charge build-up (conventionally typical bias values used are closer to 1 V/μm). Velocity reached values of 38 μm/ns and 53 μm/ns for electrons and holes, respectively (values probed at 0.33 V/μm). Similarly, the α detection spectrum displays a sharp line demonstrating the good uniformity of the material over its surface. By combining the measurements with more conventional optical observations such as birefringence and cathodoluminescence spectroscopy, it comes that the material demonstrates its ability to be used as a detector, with properties that can compare with the highest grade materials today available on the market. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Interplay Between Side Chain Pattern, Polymer Aggregation, and Charge Carrier Dynamics in PBDTTPD:PCBM Bulk-Heterojunction Solar Cells

    KAUST Repository

    Dyer-Smith, Clare

    2015-05-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene–alt–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors with linear side-chains yield bulk-heterojunction (BHJ) solar cell power conversion efficiencies (PCEs) of about 4% with phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, while a PBDTTPD polymer with a combination of branched and linear substituents yields a doubling of the PCE to 8%. Using transient optical spectroscopy it is shown that while the exciton dissociation and ultrafast charge generation steps are not strongly affected by the side chain modifications, the polymer with branched side chains exhibits a decreased rate of nongeminate recombination and a lower fraction of sub-nanosecond geminate recombination. In turn the yield of long-lived charge carriers increases, resulting in a 33% increase in short circuit current (J sc). In parallel, the two polymers show distinct grazing incidence X-ray scattering spectra indicative of the presence of stacks with different orientation patterns in optimized thin-film BHJ devices. Independent of the packing pattern the spectroscopic data also reveals the existence of polymer aggregates in the pristine polymer films as well as in both blends which trap excitons and hinder their dissociation.

  7. Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

    Science.gov (United States)

    Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

    2016-02-01

    Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD.

  8. Effect of trapping of charge carriers on the resolution of Ge(Li) detectors

    International Nuclear Information System (INIS)

    In this work a measurement is described of the variation of the resolution of a Ge(Li) detector as a function of the position of irradiation of a collimated gamma-ray beam. Also the variation of the resolution has been measured as a function of the applied detector voltage, using a collimated and a non-collimated gamma-ray beam. The measurement indicate that in the process of charge collection loss of holes predominates and the best resolution is obtained in the middle of the compensated region. It has been verified that, in the case of a collimated gamma beam the detector resolution improves with increasing detector bias up to at least 5100 Volts. For a non-collimated gamma beam, however, the resolution reaches a constant value at about 4400 Volts. The dependence of resolution on the position of irradiation can be accounted for by introducing a local ionization factor different from the usual position independent Fano factor. (author)

  9. Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon

    Directory of Open Access Journals (Sweden)

    I.B. Olenych

    2014-01-01

    Full Text Available The temperature dependences of the electrical conductivity of porous silicon and thermally oxidized porous silicon in the modes of direct and alternating currents in the temperature range of 80-370 K are investigated. The results are analyzed within the model of disordered semiconductors and the mechanisms of charge transfer are determined. Based on the spectra of thermally stimulated depolarization, the localized electron states which influence the electric transport properties of porous silicon are found. It is shown that thermal oxidation leads to the change in the occupation density of states in different energy ranges and expansion of the temperature range, in which hopping conductivity mechanism of porous silicon is realized.

  10. Effect of Fluorine Substitution on the Charge Carrier Dynamics of Benzothiadiazole-Based Solar Cell Materials.

    Science.gov (United States)

    Kim, In-Sik; Kim, In-Bok; Kim, Dong-Yu; Kwon, Seong-Hoon; Ko, Do-Kyeong

    2016-08-01

    The femtosecond transient absorption (TA) characterization of a new benzothiadiazole (BT)-based donor-acceptor conjugated copolymer, poly[(2,6-dithieno[3,2-b:2',3'-d]thiophene)-alt-(4,7-di(4-octyldodecylthiopen-2-yl)-2,1,3-benzo[c][1,2,5]thiadiazole (PBT), as well as its fluorinated derivatives, PFBT and PDFBT, is carried out. Additionally, bulk heterojunction (BHJ) films consisting of the copolymers and [6,6]-phenyl-C71 -butylic acid methyl ester (PC70 BM) are examined using TA spectroscopy. Both the singlet excited state dynamics in the copolymers and the charge transfer state dynamics in the BHJs are investigated in terms of fluorination dependency; the fluorinated copolymers exhibit less singlet exciton recombination rate than the fluorine-free copolymer, and the BHJs including the fluorinated copolymers display slower monomolecular recombination than the fluorine-free analogue. Furthermore, the excitation-intensity-dependent TA dynamics of the copolymers and BHJs is investigated, revealing that, when sufficiently high excitation intensity is used to induce annihilation processes, the fluorinated copolymers and BHJs incorporating the fluorinated copolymers show more rapid TA decay ascribable to morphological enhancement. These TA spectroscopic findings are found to correlate with the device characteristics with respect to fluorinated content in the polymer solar cells. In particular, both the short-circuit current density and fill factor of BHJ solar cells correspond closely with the fast decay parameters of the BHJ films under high excitation intensity. PMID:27226245

  11. Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory

    International Nuclear Information System (INIS)

    Dynamic resistive memory devices based on a conjugated polymer composite (PPy0DBS-Li+ (PPy: polypyrrole; DBS-: dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

  12. Temperature dependent relaxation of separated charge carriers at CdSe-QD / ITO interfaces

    International Nuclear Information System (INIS)

    One and 5 monolayers of CdSe quantum dots with fixed diameter were deposited on ITO substrates by dip coating and investigated by transient surface photovoltage (SPV) at temperatures up to 250 C. The SPV transients were excited with laser pulses (duration time 5 ns) and measured in vacuum at times up to 0.2 s. SPV transients arose within the laser pulse and could be well fitted with one (one monolayer of CdSe-QDs) or two (5 monolayers of CdSe-QDs) stretched exponentials. The parameters of the stretched exponentials changed depending on defect generation during heating as well as on thermal activation processes during heating and cooling. During cooling, the mean relaxation times of both processes were thermally activated with an activation energy of 0.9 eV. Defect generation strongly affected charge separation and relaxation within the first monolayer at the CdSe-QD/ITO interface and between the first monolayer of CdSe-QDs and following CdSe-QD layers.

  13. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan

    2013-08-12

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  14. Ultrasonic coupling to optically generated charge carriers in CdS: Physical phenomena and applications. Ph.D. Thesis - Washington Univ., Saint Louis, Mo.

    Science.gov (United States)

    Heyman, J. S.

    1975-01-01

    Phonon-charge carrier interactions are studied as well as ultrasonic resonators. Sensitivity enhancement factors predicted by one dimensional resonator theory are verified and several sensitive ultrasonic experimental techniques are developed. Measurements are reported of an anomalous sign reversal of the acoustoelectric voltage in a CdS resonator. Applications of CdS as an ultrasonic power detector are described.

  15. Spin dynamics of charge carriers in the process of their localization in α'-(BEDT-TTF)2IBr2 single crystals

    International Nuclear Information System (INIS)

    Sharp changes in the integral intensity and linewidth of the ESR spectrum that accompany the localization of the charge carriers have been revealed in α'-(BEDT-TTF)2IBr2 crystals. It has been found that the types of localization in two compounds under investigation are different: charge carriers in β''-(BEDT-TTF)4NH4[Cr(C2O4)3] are localized on irregular defects of the crystal lattice, whereas charge carriers in α'-(BEDT-TTF)2IBr2 are localized at the regular positions of the unit cell. The exchange narrowing of the ESR line and a sharp decrease in the dc and ac magnetic susceptibilities are observed in α'-(BEDT-TTF)2IBr2 at low temperatures T 2IBr2 at high temperatures T > 50 K differ from each other, because the thermally activated hopping frequency of the charge carriers is higher than the frequency of the measuring UHF field of an ESR spectrometer.

  16. Insights into the charge carrier terahertz mobility in polyfluorenes from large-scale atomistic simulations and time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Vukmirović, N.; Ponseca, C.S.; Němec, Hynek; Yartsev, A.; Sundström, V.

    2012-01-01

    Roč. 116, č. 37 (2012), s. 19665-1972. ISSN 1932-7447 Institutional research plan: CEZ:AV0Z10100520 Keywords : charge carrier mobility * time-resolved terahertz spectroscopy * multiscale atomistic calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.814, year: 2012

  17. Charge carrier transport mechanisms in perovskite CdTiO3 fibers

    International Nuclear Information System (INIS)

    Electrical transport properties of electrospun cadmium titanate (CdTiO3) fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC) with traps at higher voltages at all temperatures (200 K – 420 K). Trap density in our fibers system is Nt = 6.27 × 1017 /cm3. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH) from 200 K – 300 K. The localized density of states were found to be N(EF) = 5.51 × 1021 eV−1 cm−3 at 2 V. Other VRH parameters such as hopping distance (Rhop) and hopping energy (Whop) were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO3 fibers efficient material for capacitive energy storage devices

  18. Spatial Separation of Charge Carriers in In2O3-x(OH)y Nanocrystal Superstructures for Enhanced Gas-Phase Photocatalytic Activity.

    Science.gov (United States)

    He, Le; Wood, Thomas E; Wu, Bo; Dong, Yuchan; Hoch, Laura B; Reyes, Laura M; Wang, Di; Kübel, Christian; Qian, Chenxi; Jia, Jia; Liao, Kristine; O'Brien, Paul G; Sandhel, Amit; Loh, Joel Y Y; Szymanski, Paul; Kherani, Nazir P; Sum, Tze Chien; Mims, Charles A; Ozin, Geoffrey A

    2016-05-24

    The development of strategies for increasing the lifetime of photoexcited charge carriers in nanostructured metal oxide semiconductors is important for enhancing their photocatalytic activity. Intensive efforts have been made in tailoring the properties of the nanostructured photocatalysts through different ways, mainly including band-structure engineering, doping, catalyst-support interaction, and loading cocatalysts. In liquid-phase photocatalytic dye degradation and water splitting, it was recently found that nanocrystal superstructure based semiconductors exhibited improved spatial separation of photoexcited charge carriers and enhanced photocatalytic performance. Nevertheless, it remains unknown whether this strategy is applicable in gas-phase photocatalysis. Using porous indium oxide nanorods in catalyzing the reverse water-gas shift reaction as a model system, we demonstrate here that assembling semiconductor nanocrystals into superstructures can also promote gas-phase photocatalytic processes. Transient absorption studies prove that the improved activity is a result of prolonged photoexcited charge carrier lifetimes due to the charge transfer within the nanocrystal network comprising the nanorods. Our study reveals that the spatial charge separation within the nanocrystal networks could also benefit gas-phase photocatalysis and sheds light on the design principles of efficient nanocrystal superstructure based photocatalysts. PMID:27159793

  19. Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    Han, S.S.

    1993-09-01

    Ion-induced conductivity has been used to investigate the detector characteristics of diamond detectors. Both integrated-charge, and time-resolved current measurements were performed to examine the mean carrier transport properties of diamond and the dynamics of charge collection under highly-localized and high-density excitation conditions. The integrated-charge measurements were conducted with a standard pulse-counting system with {sup 241}Am radioactivity as the excitation source for the detectors. The time-resolved current measurements were performed using a 70 GHz random sampling oscilloscope with the detectors incorporated into high-speed microstrip transmission lines and the excitation source for these measurements was an ion beam of either 5-MeV He{sup +} or 10-MeV Si{sup 3+}. The detectors used in both experiments can be described as metal-semiconductor-metal (MSM) devices where a volume of the detector material is sandwiched between two metal plates. A charge collection model was developed to interpret the integrated-charge measurements which enabled estimation of the energy required to produce an electron-hole pair ({epsilon}{sub di}) and the mean carrier transport properties in diamond, such as carrier mobility and lifetime, and the behavior of the electrical contacts to diamond.

  20. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  1. Multi-THz spectroscopy of mobile charge carriers in P3HT:PCBM on a sub-100 fs time scale

    DEFF Research Database (Denmark)

    Cooke, David G.; Krebs, Frederik C; Jepsen, Peter Uhd

    2013-01-01

    The dynamics of mobile charge carrier generation in polymer bulk heterojunction films is of vital importance to the development of more efficient organic photovoltaics. As with conventional semiconductors, the optical signatures of mobile carriers lie in the far-infrared (1-30 THz) although the...... spectroscopy of a polymer bulk heterojunction film P3HT:PCBM using a single-cycle, phase-locked and coherently detected multi-THz transient as a probe pulse following femtosecond excitation at 400 nm. By observing changes to the reflected THz transients from the film surface following photoexcitation, we can...

  2. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, Ryan W. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Callahan, Rebecca [National Renewable Energy Lab. (NREL), Golden, CO (United States); Reid, Obadiah G. [Univ. of Colorado, Boulder, CO (United States); Dolzhnikov, Dmitriy S. [Univ. of Chicago, IL (United States); Talapin, Dmitri V. [Univ. of Chicago, IL (United States); Rumbles, Garry [National Renewable Energy Lab. (NREL), Golden, CO (United States); Luther, Joseph M. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Kopidakis, Nikos [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  3. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds: implications for the DIB carrier

    Science.gov (United States)

    Cox, N. L. J.; Spaans, M.

    2006-06-01

    Context.The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims.In order to reveal the identity of the DIB carrier we investigate the effects of metallicity, radiation field and extinction curve on the PAH charge state distribution, and thus the theoretical emergent PAH spectrum, in diffuse interstellar clouds. This behaviour can then be linked to that of the DIB carrier, thus giving insight into its identity. Methods.We use radiative transfer and chemical models to compute the physical and chemical conditions in diffuse clouds with Galactic and Magellanic Cloud types of interstellar dust and gas. Subsequently, the PAH charge state distributions throughout these clouds are determined. Results.We find that the fraction of PAH cations is much higher in the Magellanic Cloud environments than in the Milky Way, caused predominantly by the respective lower metallicities, and mitigated by the steeper UV extinction curve. The fraction of anions is much lower in a low metallicity environment. The predicted DIB strength of cationic PAH carriers is similar to that of the Milk Way for the LMC and 40% for the SMC due to the overall metallicity. Stronger DIBs could be expected in the Magellanic Clouds if they emanate from clouds that are exposed to an average interstellar radiation field that is significantly stronger than in the Milky Way, although photo-destruction processes could possibly reduce this effect, especially for the smaller PAHs. Our results show that the presence and absence of DIB carriers in the Magellanic Cloud lines of sight can be tied to the PAH charge balance which is driven by metallicity, UV radiation and dust extinction effects.

  4. Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

    2015-10-15

    The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

  5. Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

    Science.gov (United States)

    Burshtein, Z.; Jayatirtha, H. N.; Burger, A.; Butler, J. F.; Apotovsky, B.; Doty, F. P.

    1993-01-01

    Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

  6. Effects of Molecular Structure on Intramolecular Charge Carrier Transport in Dithieno [3,2-b: 2,3-d] Pyrrole-Based Conjugated Copolymers

    Directory of Open Access Journals (Sweden)

    Yoshihito Honsho

    2012-01-01

    Full Text Available Intramolecular mobility of positive charge carriers in conjugated polymer films based on dithieno [2,3-b: 2,3-d] pyrrole (DTP is studied by time-resolved microwave conductivity (TRMC. A series of DTP homopolymer and copolymers combined with phenyl, 2,2-biphenyl, thiophene, 2,2-bithiophene, and 9,9-dioctylfluorene were synthesized by Suzuki-Miyaura and Yamamoto coupling reactions. Polymers containing DTP unit are reported to show high value of hole mobility measured by FET method, and this type of polymers is expected to have stable HOMO orbitals which are important for hole transportation. Among these copolymers, DTP coupled with 9,9-dioctylfluorene copolymer showed the highest charge carrier mobility as high as 1.7 cm2/Vs, demonstrating an excellent electrical property on rigid copolymer backbones.

  7. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    International Nuclear Information System (INIS)

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents jph being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at jph ≠ 0) charge-carrier diffusion length ldeff as a function of jph for jph → 0 inferred from our experimental data proved to be consistent with the behavior of ldeff vs jph as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe

  8. Influence of structural defects in subsurface layers of silicon on charge carrier mobility in the channel of MOS-transistors threshold voltage

    International Nuclear Information System (INIS)

    The influence of structural imperfections, the impurity composition, and the doping inhomogeneity on the basic parameters of the I - V characteristics of MOS-transistors has been found out with aid of modern research methods. Oxygen and carbon are the basic impurities in initial and oxidized silicons. Oxygen reveals electrical activity and influences the parameters of structural defects that, in turn, affect the charge carrier mobility and the threshold voltage

  9. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

    CERN Document Server

    Schöche, S; Darakchieva, V; Wang, X; Yoshikawa, A; Wang, K; Araki, T; Nanishi, Y; Schubert, M

    2013-01-01

    Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\\times10^{17}$ cm$^{-3}$ to $8\\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\\times10^{18}$ cm$^{-3}$ to $9\\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Sch\\"oche et al., ...

  10. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Yokoyama, Masaaki [Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  11. Behavior of charge carriers and excitons in multilayer organic light-emitting diodes made from a polysilane polymer as monitored with electroluminescence

    Science.gov (United States)

    Suzuki, Hiroyuki; Hoshino, Satoshi

    1996-01-01

    Using electroluminescence (EL) as a monitor, we have investigated the behavior of charge carriers injected from electrodes and excitons generated by the recombination of charge carriers in multilayer organic light-emitting diodes (LEDs) using poly(methylphenylsilane) (PMPS) as a hole transporting material. Our multilayer LEDs have two or three functional organic layers including Coumarin 6 [3-(2'-benzothiazolyl)-7-diethylaminocoumarin, abbreviated as C6] and/or tris-(8-hydroxyquinoline) aluminum layers as well as a PMPS layer. When the LEDs were fabricated, two parameters of the C6 layer were changed, the layer thickness (30-120 nm) and the dye concentration (1-100 wt %). We employed a combined analysis of the dependence of the EL spectra on the thickness and dye concentration of the C6 layer, the dye-selective fluorescence spectra and the current-voltage-EL characteristics, to reveal the thickness of the electron-hole capture zone and the behavior of charge carriers and excitons during operation in these LEDs.

  12. Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Dauffy, L S; Koch, J A

    2005-10-20

    This report investigates the use of x-rays and electrons to excite a CVD polycrystalline diamond detector during a double pulse experiment to levels corresponding to those expected during a successful (1D clean burn) and a typical failed ignition (2D fizzle) shot at the National Ignition Facility, NIF. The monitoring of a failed ignition shot is the main goal of the diagnostic, but nevertheless, the study of a successful ignition shot is also important. A first large neutron pulse is followed by a smaller pulse (a factor of 1000 smaller in intensity) after 50 to 300 ns. The charge carrier densities produced during a successful and failed ignition shot are about 10{sup 15} e-h+/cm{sup 3} and 2.6* 10{sup 12} e-h+/cm{sup 3} respectively, which is lower than the 10{sup 16} e-h+/cm{sup 3} needed to saturate the diamond wafer due to charge recombination. The charge carrier density and the signal induced in the diamond detector are calculated as a function of the incident x-ray and electron energy, flux, and detector dimensions. For available thicknesses of polycrystalline CVD diamond detectors (250 {micro}m to 1000 {micro}m), a flux of over 10{sup 11} x-rays/cm{sup 2} (with x-ray energies varying from 6 keV to about 10 keV) or 10{sup 9} {beta}/cm{sup 2} (corresponding to 400 pC per electron pulse, E{sub {beta}} > 800 keV) is necessary to excite the detector to sufficient levels to simulate a successful ignition's 14 MeV peak. Failed ignition levels would require lower fluxes, over 10{sup 8} x-rays/cm{sup 2} (6 to 10 keV) or 10{sup 6} {beta}/cm{sup 2} (1 pC per electron pulse, E{sub {beta}} > 800 keV). The incident pulse must be delivered on the detector surface in several nanoseconds. The second pulse requires fluxes down by a factor of 1000. Several possible x-ray beam facilities are investigated: (1) the LBNL Advanced Light Source, (2) the Stanford SLAC and SPEAR, (3) the BNL National Synchrotron Light Source, (4) the ANL Advanced Photon Source, (5) the LLNL Janus

  13. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

    Science.gov (United States)

    Nazir, Safdar; Bernal, Camille; Yang, Kesong

    2015-03-11

    The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals. PMID:25688656

  14. The temperature anomalies of the YBa2Cu3O6.9 charge carriers density from 290 K to Tc

    International Nuclear Information System (INIS)

    A possibility of HTSC electronic properties investigating by means of measuring the electrical resistance rC of HTSC/normal metal interface is grounded. An existence of the correlations between anomalies of rC and anomalies of density nf of HTSC charge carriers is shown. The correlations between the anomalies of dependence rC(T) for interface YBa2Cu3O6.9/In and anomalies of temperature dependences of YBa2Cu3O6.9 lattice cell parameters b and c are demonstrated. The conclusion is made that the reason of anomalies rC at T>>TC is pairing the hole charge carriers of YBa2Cu3O6.9 to positive bosons. Sharp and deep rC-anomaly before n-s-transition correlates to well-known sign-reversal effect of Hall coefficient. It is explained by bosons disintegration and posterior intensive conversion of hole carriers to electrons

  15. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and 125Te NMR measurements in complex tellurides

    Science.gov (United States)

    Levin, E. M.

    2016-06-01

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S , depends on the free (mobile) carrier concentration, n , and effective mass, m*, as S ˜m*/n2 /3 . The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1 /T1 , depends on both n and m* as 1 /T1˜(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1 /T1˜(m*)2n2 /3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study A gxS bxG e50-2xT e50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  16. The effect of oxidation on charge carrier motion in PbS quantum dot thin films studied with Kelvin Probe Microscopy

    Science.gov (United States)

    Nguyen Hoang, Lan Phuong; Williams, Pheona; Moscatello, Jason; Aidala, Kathy; Aidala group Team

    We developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in thin film devices. We investigate the effects of oxidation on thin films of Lead Sulfide (PbS) quantum dots with tetrabutyl-ammonium-iodide (TBAI) ligands in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin Probe Force Microscopy (KPFM) to measure the potential over time, we can record how the charge carriers respond to changing the backgate voltage with grounded source and drain electrodes. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the PbS film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We probe these trapped holes by applying different gate voltages and recording the change in potential at the surface. There are mixed reports about the effect of air exposure on thin films of PbS quantum dots, with initial exposure appearing to be beneficial to device characteristics. We study the change in current, mobility, and charge injection and extraction as measured by KPFM over hours and days of exposure to air. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  17. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    International Nuclear Information System (INIS)

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10−14–10−13 m2 V−1 s−1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets

  18. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Science.gov (United States)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  19. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

    OpenAIRE

    Schoehe, S.; Hofmann, T.; Darakchieva, Vanya; X Wang; Yoshikawa, A.; Wang, K.; Araki, T; Nanishi, Y; Schubert, M

    2014-01-01

    Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\\times10^{17}$ cm$^{-3}$ to $8\\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\\times10^{18}$ cm$^{-3}$ to $9\\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasm...

  20. Self-recovery of mechanoluminescence in ZnS:Cu and ZnS:Mn phosphors by trapping of drifting charge carriers

    Science.gov (United States)

    Chandra, V. K.; Chandra, B. P.; Jha, Piyush

    2013-10-01

    The long time dream of mechanoluminescence (ML) research to fabricate mechanoluminescence white light sources and mechanoluminescence displays seems to be turning into reality after the recent demonstration of highly bright and durable mechanoluminescent flexible composite films with a brightness of ≈120 cd/m2 and durability over ≈100 000 repeated mechanical stresses by using a combination of copper-doped zinc sulfide (ZnS:Cu) particles and polydimethylsiloxane. The present paper explores that self-recovery of mechanoluminescence of deforming piezoelectric semiconductors takes place by trapping of drifting charge carriers in the presence of piezoelectric field. This may be useful in enhancing the intensity and durability of ML devices.

  1. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 × 1017 cm−3 to 8 × 1020 cm−3 are compared. P-type conductivity is indicated for the Mg concentration range of 1 × 1018 cm−3 to 9 × 1019 cm−3 from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon–plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schöche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 × 1020 cm−3 are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening. - Highlights: • Optical determination of free-charge carrier parameters in In-polar InN:Mg films • Identification of conductivity type and determination of concentration and mobility • Similar trends for two independent sample sets showing general Mg-doping behavior • Identification of compensated n-type samples with very low electron concentrations • Confirmation of different phonon plasmon broadening for holes and electrons

  2. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil;

    2016-01-01

    absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

  3. Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

    Institute of Scientific and Technical Information of China (English)

    Ken K. Chin

    2011-01-01

    For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated,that have multiple transition energy levels among charge states,the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density.A graphical method is used to illustrate the solution of the problem.Relations among the transition energy levels of the multi-level defect are derived using the graphical method.Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work.

  4. Improved solar-driven photocatalytic performance of BiOI decorated TiO2 benefiting from the separation properties of photo-induced charge carriers

    Science.gov (United States)

    Li, Jianzhang; Zhong, Junbo; Si, Yujun; Huang, Shengtian; Dou, Lin; Li, Minjiao; Liu, Yinping; Ding, Jie

    2016-02-01

    In this work, BiOI decorated TiO2 photocatalysts were prepared in-situ by a facile hydrothermal method and characterized by X-ray diffraction (XRD), UV/Vis diffuse reflectance spectroscopy, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and surface photovoltage (SPV) spectroscopy. The reactive radicals during the photocatalytic reaction were detected by scavenger experiments. BiOI/TiO2 composites exhibit higher performance than the pure TiO2 towards photocatalytic decolorization of methyl orange (MO) aqueous solution, when the molar ratio of Bi/Ti is 2%, the sample has the highest photocatalytic activity. The enhanced photocatalytic performance of BiOI/TiO2 could be ascribed to the separation properties of photo-induced charge carriers and strong interaction between BiOI and TiO2. Based on the observations, a Z-scheme charge separation mechanism was proposed.

  5. Self-assembly and charge carrier transport of solution-processed conjugated polymer monolayers on dielectric surfaces with controlled sub-nanometer roughness

    Science.gov (United States)

    Li, Mengmeng; Hinkel, Felix; Müllen, Klaus; Pisula, Wojciech

    2016-04-01

    In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics.In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01082b

  6. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Energy Technology Data Exchange (ETDEWEB)

    Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, LAPLACE, F-31062 Toulouse (France); Vu, T. T. N. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); Electric Power University, 235 Hoang Quoc Viet, 10000 Hanoi (Viet Nam)

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  7. Detection of Negative Charge Carriers in Superfluid Helium Droplets: The Metastable Anions He*– and He2 *–

    OpenAIRE

    Mauracher, Andreas; Daxner, Matthias; Postler, Johannes; Huber, Stefan E.; Denifl, Stephan; Scheier, Paul; Toennies, J. Peter

    2014-01-01

    Helium droplets provide the possibility to study phenomena at the very low temperatures at which quantum mechanical effects are more pronounced and fewer quantum states have significant occupation probabilities. Understanding the migration of either positive or negative charges in liquid helium is essential to comprehend charge-induced processes in molecular systems embedded in helium droplets. Here, we report the resonant formation of excited metastable atomic and molecular helium anions in ...

  8. Role of Sub-Nanometer Dielectric Roughness on Microstructure and Charge Carrier Transport in α,ω-Dihexylsexithiophene Field-Effect Transistors.

    Science.gov (United States)

    Li, Mengmeng; Marszalek, Tomasz; Müllen, Klaus; Pisula, Wojciech

    2016-06-29

    The effect of dielectric roughness on the microstructure evolution of thermally evaporated α,ω-dihexylsexithiophene (α,ω-DH6T) thin films from a single molecular layer to tens of monolayers (ML) is studied. Thereby, the surface roughness of dielectrics is controlled within a sub-nanometer range. It is found that the grain size of an α,ω-DH6T ML is affected by dielectric roughness, especially for 1.5 ML, whereby the transistor performance is barely influenced. This can be attributed to a domain interconnection in the second layer over a long-range formed on the rough surface. With deposition of more layers, both microstructure and charge carrier transport exhibit a roughness-independent behavior. The structural characterization of α,ω-DH6T 10 ML by grazing-incidence wide-angle X-ray scattering reveals that the interlayer distance is slightly decreased from 3.30 to 3.15 nm due to a higher roughness, while an unchanged π-stacking distance is in excellent agreement with the roughness-independent hole mobility. This study excludes the influence of molecular-solvent interaction and preaggregation taking place during solution deposition, and provides further evidence that the microstructure of the interfacial layer of organic semiconductors has only minor impact on the bulk charge carrier transport in thicker films. PMID:27280702

  9. Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Grunwald, Torben

    2009-12-17

    This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

  10. Reversible formation of charge carrier traps in poly(phenylenevinylene) due to a transformation of a photochromic additive

    Czech Academy of Sciences Publication Activity Database

    Weiter, M.; Vala, M.; Nešpůrek, Stanislav; Sworakowski, J.; Salyk, O.; Zmeškal, O.

    Arcachon : University of Bordeaux, 2004. s. 42. [International Symposium on Photochromism /4./. 12.09.2004-15.09.2004, Arcachon] R&D Projects: GA MŠk OC D14.30 Keywords : molecular switch * photochromism * charge traps Subject RIV: BM - Solid Matter Physics ; Magnetism

  11. Coupled optical absorption, charge carrier separation, and surface electrochemistry in surface disordered/hydrogenated TiO2 for enhanced PEC water splitting reaction.

    Science.gov (United States)

    Behara, Dilip Kumar; Ummireddi, Ashok Kumar; Aragonda, Vidyasagar; Gupta, Prashant Kumar; Pala, Raj Ganesh S; Sivakumar, Sri

    2016-03-28

    The central governing factors that influence the efficiency of photoelectrochemical (PEC) water splitting reaction are photon absorption, effective charge-carrier separation, and surface electrochemistry. Attempts to improve one of the three factors may debilitate other factors and we explore such issues in hydrogenated TiO2, wherein a significant increase in optical absorption has not resulted in a significant increase in PEC performance, which we attribute to the enhanced recombination rate due to the formation of amorphization/disorderness in the bulk during the hydrogenation process. To this end, we report a methodology to increase the charge-carrier separation with enhanced optical absorption of hydrogenated TiO2. Current methodology involves hydrogenation of non-metal (N and S) doped TiO2 which comprises (1) lowering of the band gap through shifting of the valence band via less electronegative non-metal N, S-doping, (2) lowering of the conduction band level and the band gap via formation of the Ti(3+) state and oxygen vacancies by hydrogenation, and (3) material processing to obtain a disordered surface structure which favors higher electrocatalytic (EC) activity. This design strategy yields enhanced PEC activity (%ABPE = 0.38) for the N-S co-doped TiO2 sample hydrogenated at 800 °C for 24 h over possible combinations of N-S co-doped TiO2 samples hydrogenated at 500 °C/24 h, 650 °C/24 h and 800 °C/72 h. This suggests that hydrogenation at lower temperatures does not result in much increase in optical absorption and prolonged hydrogenation results in an increase in optical absorption but a decrease in charge carrier separation by forming disorderness/oxygen vacancies in the bulk. Furthermore, the difference in double layer capacitance (C(dl)) calculated from electrochemical impedance spectroscopy (EIS) measurements of these samples reflects the change in the electrochemical surface area (ECSA) and facilitates assessing the key role of surface

  12. Assessment of Hot-Carrier Effects on Charge Separation in Type-II CdS/CdTe Heterostructured Nanorods.

    Science.gov (United States)

    Okano, Makoto; Sakamoto, Masanori; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

    2014-09-01

    Charge separation in semiconducting materials is an essential process that determines the efficiency of photovoltaic devices and photocatalysts. Herein, we report the charge-separation dynamics in type-II CdS/CdTe heterostructured nanorods revealed by femtosecond transient-absorption (TA) measurements with a broad-band white-light probe. Under selective excitation of the CdTe segment, bleaching signals at the band gap energy of CdS were clearly observed with a rise component on a subpicosecond time scale, which indicates efficient electron transfer from CdTe to CdS. The pump-energy dependence of the TA dynamics shows that hot electrons rapidly relax to the bottom of the conduction band of CdTe, and then the electrons transfer to the CdS segment. PMID:26278242

  13. Analytical Evaluation of the Ratio Between Injection and Space-Charge Limited Currents in Single Carrier Organic Diodes

    OpenAIRE

    Alvarez, Angel Luis; Arredondo, Belen; Romero, Beatriz; Quintana Arregui, Patxi Xabier; Gutierrez Llorente, Araceli; Mallavia, Ricardo; Otón Sánchez, José Manuel

    2008-01-01

    An analytical, complete framework to describe the current-voltage (I-V) characteristics of organic diodes without the use of previous approaches, such as injection or bulk-limited conduction is proposed. Analytical expressions to quantify the ratio between injection and space-charge-limited current from experimental I-V characteristics in organic diodes have been derived. These are used to propose a numerical model in which both bulk transport and injection mechanisms are considered simultane...

  14. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Qfix) and the effective lifetimes (τeff) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τeff than standard undoped layers. In contrast, B-doped layers exhibit lower τeff. A strong Qfix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  15. Certain problems of photoelectrical elements with structure of the metal-dielectric-semiconductor with dominant current of charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Baratka, S.

    1983-01-01

    An examination is made of the role of a thin dielectric layer in the structures of metal-dielectric-SCo, features of the heterotransition oxide-SCo, questions of selecting the antireflecting coating and preparation of the surface, influence of specific electrical resistance of the backing on the values of the voltage characteristics, the attained values of efficiency, problems of deterioration in time of the SC parameters in which the collector electrode has the form of a grid applied directly to the layer of dielectric. The main advantages of the examined SC are: simple fabrication; lack of ''dead zone'' because of exclusion of the strong alloyed surface layer governing increase in the service life of the carriers and the improved coefficient of energy transformation, especially in the UV-regions; prevention of overheating of the element and guaranteed optimal conditions for the use of less expensive polycrystaline materials with the exclusion of diffusion.

  16. Phase analysis and determination of local charge carrier concentration in eutectic Mg2Si–Si alloys

    International Nuclear Information System (INIS)

    Multiphase materials attract attention due to possible combination of various properties attributed to each phase. The phase diagram of Mg–Si system shows that solidification of a melt containing about 45 and 55 at.% of Mg and Si should result in formation of Mg2Si and Si. Two alloys, Mg45Si55 and Mg46Si54 + 0.5 wt.% Cu have been synthesized and studied using XRD, SEM, and 29Si NMR at 300 K, and the Seebeck effect, electrical resistivity, and thermal conductivity in the temperature range of 300–750 K have been measured. 29Si NMR detects two distinct signals, at −177 and −80 ppm, in both materials, which are assigned to Mg2Si and Si phases, respectively. Both phases are slightly nonstoichiometric and doped with Mg. Two phases also are found by XRD and electron microscopy. 29Si NMR spin-lattice relaxation measurements in Mg2Si and Si phases show at least two components, short and long, which can be attributed to different local carrier concentrations, high and low, respectively, reflecting a local electronic inhomogeneity in each phase. The carrier concentrations range between 0.6 × 1019 and 9 × 1019 cm−3. The Seebeck coefficient in both alloys is mostly determined by the Si phase, while the thermal conductivity is limited by the Mg2Si phase with a lower value than that of the Si phase. By utilizing all characterization tools, we show how various experimental methods can be used as complementary methods to better understand the individual and combined properties of multiphase alloys. - Highlights: • Two distinct phases, Mg2Si and Si, are found in Mg45Si55 and Mg46Si54 + 0.5 wt.% Cu alloys. • 29Si NMR spin-lattice relaxation measurements demonstrate two relaxation components in each phase. • XRD, electron microscopy, and NMR have been demonstrated as complementary methods to study multiphase alloys

  17. Well-Steered Charge-Carrier Transfer in 3D Branched CuxO/ZnO@Au Heterostructures for Efficient Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Zhou, Gang; Xu, Xiaoyong; Ding, Tao; Feng, Bing; Bao, Zhijia; Hu, Jingguo

    2015-12-01

    Multi-component hetero-nanostructures exhibit multifunctional properties or synergistic performance and are thus considered as attractive materials for energy conversion applications. There is a long-standing demand to construct more sophisticated heterostructures for steering charge-carrier flow in semiconductor systems. Herein we fabricate a large-scale quantity of three-dimensional (3D) branched CuxO/ZnO@Au heterostructure consisting of CuO nanowires (NWs) and grafted ZnO nanodisks (NDs) decorated with Au nanoparticles via sequential hierarchical assemblies. This treelike hetero-nanostructure ensures well-steered transfer of photogenerated electrons to the exposed ZnO NDs, while holes to the CuO backbone NWs with concerted efforts from multi-node p-n junctions, polar ZnO facets, and Au plasmon, resulting in the significantly enhanced photocatalytic hydrogen evolution performance. PMID:26563634

  18. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    International Nuclear Information System (INIS)

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization

  19. Charge carrier transport in high purity perylene single crystal studied by time-of-flight measurements and through field effect transistor characteristics

    International Nuclear Information System (INIS)

    Electronic transport has been studied by measuring the characteristics of field effect transistors using high purity perylene and the results have been compared with those from time-of-flight measurements. The purity of the material has been monitored by carrier trapping time and delayed fluorescence lifetime. Three types of field effect transistors have been studied: (1) thin film transistor, (2) transistor prepared by placing a single crystal flake on a substrate and (3) transistor fabricated on a single crystal by depositing electrodes and insulating layer onto it. Compared to thin film transistors prepared by evaporating perylene onto a SiO2/Si substrate, higher mobility values were obtained with transistors using single crystals, but the electrical characteristics of the transistors were far from ideal: large threshold gate voltage observed in the second class of FETs indicated that a high density of traps are present at the interface between the organics and the insulator. A transistor of the third class showed that it functioned indeed as a FET with a reasonably high mobility, but the operation was not stable enough to allow reliable measurements. Much remains to be improved in the design and construction of a perylene FET before the potentiality of the material is fully developed. Also, it remains to be explored to what extent the bulk purity and the molecular order at the organics/insulator interface influence the transport of the charge carriers in an organic FET

  20. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Polster, S. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Jank, M. P. M. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Frey, L. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  1. Influence of the semipolar GaN template on the charge carrier dynamics in an active InGaN layer

    International Nuclear Information System (INIS)

    The growth on semipolar GaN is in the focus of many research studies for several years now since the influence of the Quantum Confined Stark Effect (QCSE) on an active region grown on these planes is significantly reduced. This leads to superior charge carrier dynamics, enhanced emission efficiency and increased indium incorporation with respect to an active region grown on c-plane GaN. As the production of native semipolar substrates with adequate crystalline quality is still difficult and expensive other growth techniques have to be considered. In this work we use the facets of three-dimensional grown GaN pyramids as semipolar templates for active InGaN quantum wells. The pyramids are grown by epitaxial lateral overgrowth (ELO). Since the pyramid facets serve as growth template for the active region, their crystalline quality directly affects the emission efficiency and carrier dynamics of the InGaN layer. Therefore, GaN pyramids of different sizes grown on the same sample were examined by time dependent photoluminescence measurements.

  2. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components; Ladungstraegertransport in epitaktischen Strontiumtitanat-Schichten fuer den Einsatz in supraleitenden Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Veit

    2011-02-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively {sigma}(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10{sup 7}..10{sup 8} V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  3. Phase analysis and determination of local charge carrier concentration in eutectic Mg{sub 2}Si–Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Levin, E.M., E-mail: levin@iastate.edu [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Hanus, R. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Cui, J. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Xing, Q.; Riedemann, T. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Lograsso, T.A. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011 (United States); Schmidt-Rohr, K. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Chemistry, Iowa State University, Ames, IA 50011 (United States)

    2015-05-05

    Multiphase materials attract attention due to possible combination of various properties attributed to each phase. The phase diagram of Mg–Si system shows that solidification of a melt containing about 45 and 55 at.% of Mg and Si should result in formation of Mg{sub 2}Si and Si. Two alloys, Mg{sub 45}Si{sub 55} and Mg{sub 46}Si{sub 54} + 0.5 wt.% Cu have been synthesized and studied using XRD, SEM, and {sup 29}Si NMR at 300 K, and the Seebeck effect, electrical resistivity, and thermal conductivity in the temperature range of 300–750 K have been measured. {sup 29}Si NMR detects two distinct signals, at −177 and −80 ppm, in both materials, which are assigned to Mg{sub 2}Si and Si phases, respectively. Both phases are slightly nonstoichiometric and doped with Mg. Two phases also are found by XRD and electron microscopy. {sup 29}Si NMR spin-lattice relaxation measurements in Mg{sub 2}Si and Si phases show at least two components, short and long, which can be attributed to different local carrier concentrations, high and low, respectively, reflecting a local electronic inhomogeneity in each phase. The carrier concentrations range between 0.6 × 10{sup 19} and 9 × 10{sup 19} cm{sup −3}. The Seebeck coefficient in both alloys is mostly determined by the Si phase, while the thermal conductivity is limited by the Mg{sub 2}Si phase with a lower value than that of the Si phase. By utilizing all characterization tools, we show how various experimental methods can be used as complementary methods to better understand the individual and combined properties of multiphase alloys. - Highlights: • Two distinct phases, Mg{sub 2}Si and Si, are found in Mg{sub 45}Si{sub 55} and Mg{sub 46}Si{sub 54} + 0.5 wt.% Cu alloys. • {sup 29}Si NMR spin-lattice relaxation measurements demonstrate two relaxation components in each phase. • XRD, electron microscopy, and NMR have been demonstrated as complementary methods to study multiphase alloys.

  4. Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base

    International Nuclear Information System (INIS)

    We report hybrid vertical architecture p-type transistors with poly(N-vinylcarbazole) as the emitter, p-type silicon as the collector and Al:Ca alloy layer as the base. The investigation of the common-base and common-emitter characteristics clearly demonstrates that the devices operate as permeable-base transistors (PBTs). The PBTs show common-base current gain α of 0.98 at −VBC = 1.5 V and common-emitter gain β of over 100. Atomic force microscope images of the base layer show an uneven surface, showing that the annealing does not dissolve the charge trap states but offers ‘pinholes’ for the oxidation in-depth even through the whole base layer. In this case, the charge carriers must tunnel the thin oxidized layer, and then are collected. It is clearly seen that there exists a barrier against holes injection from the base to the collector semiconductor at the interface, and the further oxidation caused by exposing the devices in air changes the operational mode of the resulting devices from the PBT to the metal-base transistor. (paper)

  5. Mechanism of Charge Transfer and Recombination Dynamics in Organo Metal Halide Perovskites and Organic Electrodes, PCBM, and Spiro-OMeTAD: Role of Dark Carriers.

    Science.gov (United States)

    Ponseca, Carlito S; Hutter, Eline M; Piatkowski, Piotr; Cohen, Boiko; Pascher, Torbjörn; Douhal, Abderrazzak; Yartsev, Arkady; Sundström, Villy; Savenije, Tom J

    2015-12-30

    Despite the unprecedented interest in organic-inorganic metal halide perovskite solar cells, quantitative information on the charge transfer dynamics into selective electrodes is still lacking. In this paper, we report the time scales and mechanisms of electron and hole injection and recombination dynamics at organic PCBM and Spiro-OMeTAD electrode interfaces. On the one hand, hole transfer is complete on the subpicosecond time scale in MAPbI3/Spiro-OMeTAD, and its recombination rate is similar to that in neat MAPbI3. This was found to be due to a high concentration of dark charges, i.e., holes brought about by unintentional p-type doping of MAPbI3. Hence, the total concentration of holes in the perovskite is hardly affected by optical excitation, which manifested as similar decay kinetics. On the other hand, the decay of the photoinduced conductivity in MAPbI3/PCBM is on the time scale of hundreds of picoseconds to several nanoseconds, due to electron injection into PCBM and electron-hole recombination at the interface occurring at similar rates. These results highlight the importance of understanding the role of dark carriers in deconvoluting the complex photophysical processes in these materials. Moreover, optimizing the preparation processes wherein undesired doping is minimized could prompt the use of organic molecules as a more viable electrode substitute for perovskite solar cell devices. PMID:26636183

  6. Absence of carrier separation in ambipolar charge and spin drift in p{sup +}-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Martinelli, L. [Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Arscott, S. [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d' Ascq (France)

    2015-10-19

    The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p{sup +} GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.

  7. A novel research approach on the dynamic properties of photogenerated charge carriers at Ag2S quantum-dots-sensitized TiO2 films by a frequency-modulated surface photovoltage technology

    International Nuclear Information System (INIS)

    Graphical abstract: The changed SPV with chopping frequencies indicate the separation speeds of photogenerated charge carriers in different films. - Highlights: • Ag2S-sensitized TiO2 films show good photoelectric responses in visible-light region. • Frequency-modulated SPV give dynamic information and evidence of Ag2S QDSSCs’ performance. • Frequency-modulated SPV can supply complementary information in the study of Ag2S ODSSCs. - Abstract: Ag2S quantum-dots-sensitized TiO2 films with different amount of Ag2S were fabricated by a successive ionic layer adsorption and reaction (SILAR) method. The separation and transport of photogenerated charge carriers at different spectral regions were studied by the frequency-modulated surface photovoltage technology. Some novel dynamic information of photogenerated charge carriers in a wide spectral range is found. The results indicate that the rate and direction of separation (diffusion) for photogenerated charge carriers are closely related to the performance of quantum-dots-sensitized solar cells (QDSSCs) based on the Ag2S/TiO2 nano-structure

  8. A novel research approach on the dynamic properties of photogenerated charge carriers at Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films by a frequency-modulated surface photovoltage technology

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Zhang, Wei [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China); Xie, Tengfeng; Wang, Dejun [College of Chemistry, Jilin University, Changchun 130012 (China); Song, Xi-Ming, E-mail: songlab@lnu.edu.cn [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China)

    2013-09-01

    Graphical abstract: The changed SPV with chopping frequencies indicate the separation speeds of photogenerated charge carriers in different films. - Highlights: • Ag{sub 2}S-sensitized TiO{sub 2} films show good photoelectric responses in visible-light region. • Frequency-modulated SPV give dynamic information and evidence of Ag{sub 2}S QDSSCs’ performance. • Frequency-modulated SPV can supply complementary information in the study of Ag{sub 2}S ODSSCs. - Abstract: Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films with different amount of Ag{sub 2}S were fabricated by a successive ionic layer adsorption and reaction (SILAR) method. The separation and transport of photogenerated charge carriers at different spectral regions were studied by the frequency-modulated surface photovoltage technology. Some novel dynamic information of photogenerated charge carriers in a wide spectral range is found. The results indicate that the rate and direction of separation (diffusion) for photogenerated charge carriers are closely related to the performance of quantum-dots-sensitized solar cells (QDSSCs) based on the Ag{sub 2}S/TiO{sub 2} nano-structure.

  9. Electrical transport in a disordered medium: NMR measurement of diffusivity and electrical mobility of ionic charge carriers.

    Science.gov (United States)

    Heil, S R; Holz, M

    1998-11-01

    Electrical transport in porous media plays an important role in many fields of pure and applied science. The basic microscopic processes of the charge transport have attracted considerable theoretical interest for a long time. However, on a microscopic level there was up to now no experimental access to this problem. In the present paper we demonstrate, by using a suited porous system, that two combined NMR methods can offer such a first experimental access. We apply common PFG NMR methods and the special electrophoretic NMR (ENMR) technique for the measurement of self-diffusion coefficient D+ and electric mobility u+ of a cation ((C4H9)+4) in a disordered gel-like medium (Sephadex LH-20) filled with electrolyte solution. We find a, qualitatively expected, observation time-dependence of D+, but for the first time such a time-dependence is also observed for u+, which means the detection of the phenomenon of "anomalous field assisted diffusion" or "anomalous mobility." For the measurement of the short-time behavior of the mobility a new pulse sequence is presented. The time-dependent mobilities were measured at three different external electrical fields E. From the long-time behavior of D+, u+, and DH2O three independent values for the tortuosity T of the porous system could be derived. We find equality of the tortuosities T(D+) and T(u+), which represents a first experimental proof of the validity of the Einstein relation (D+ approximately u+) in a disordered medium. Finally, we discuss advantages of the possible use of "anomalous field assisted diffusion" over the commonly used "anomalous diffusion" in morphology studies by dynamic imaging in porous media. PMID:9799669

  10. Closed-form expressions correlating exciton transport and interfacial charge carrier generation with the donor/acceptor morphology in organic bulk heterojunction solar cells

    International Nuclear Information System (INIS)

    Organic bulk heterojunction (BHJ) solar cells are frequently modeled with effective-medium device models; these models, however, do not resolve the relation between excitonic processes in the donor/acceptor (D/A) blend and the D/A morphology. In this context, we derive a simple analytical model to relate the interfacial exciton flux and the volumetric generation rate of interfacial electron–hole pairs with the morphological characteristics of a D/A blend. Our approach does not require explicit morphological information of the D/A blend, except for the specific interfacial area and the blending ratio between donor and acceptor materials, both of which can be assessed experimentally. The expressions are verified with numerical simulations based on randomly generated three-dimensional D/A morphologies – overall, good agreement is found. The analytical expressions developed in this paper can easily be integrated into existing effective-medium device models, allowing them to capture the effect of exciton transport and morphology on free charge carrier generation in more detail. These expressions potentially allow morphological features in a D/A blend to be optimized within a fast, 1D computational framework

  11. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  12. Hydrodynamic Model for Charge Carriers

    OpenAIRE

    Choquet, Isabelle; Degond, Pierre; Schmeiser, Christian

    2003-01-01

    A set of hydrodynamic equations modeling strong ionization in semiconductors is formally derived from a kinetic framework. To that purpose, a system of Boltzmann transport equations governing the distribution functions of conduction electrons and holes is considered. Apart from impact ionization, the model accounts for phonon, lattice defects, and particle-particle scattering. Also degeneracy effects are included. The band diagram models are approximations close to the extre...

  13. Coupling between the charge carriers and lattice distortions via modulation of the orbital angular momentum m sub l =0 of the 3d holes by polarized XAS spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pompa, M.; Turtu, S.; Campanella, F.; Pettiti, I.; Udron, D. (INFM, Dipt. di Fisica, Rome-1 Univ. (Italy)); Bianconi, A. (INFM, Dipt. di Fisica, Rome-1 Univ. (Italy) Univ. of L' Aquila (Italy)); Flank, A.M.; Lagarde, P. (LURE, 91 - Orsay (France)); Li, C. (Inst. of Physics, Academia Sinica, Beijing (China))

    1991-12-01

    The change of the orbital angular momentum m{sub l} of the Cu 3d holes going from the insulating to the metallic phase has been studied in several families of high Tc superconductors. The symmetry of the 3d{sup 9}L states in the metallic phase has been studied by quantitative analysis of the variation of polarized Cu L{sub 3} X-ray absorption spectra. At a doping level n{sub h} {approx equal} 15% we have found 10% of Zhang-Rice singlets 3d{sub x}2{sub -y}2 L(b{sub 1}) and 5% of 3d{sub 3z}2{sub -r}2L(a{sub 1}) states. Therefore the percentage of the 3d{sub 3z}2{sub -r}2L states on the total number of the 3d{sup 9}L states is about 30% i.e. much larger than the probability of single hole states 3d{sub 3z}2{sub -r}2 in the insulating phase. The EXAFS and XANES studies of the Cu site structure and dynamics in Bi{sub 2}Sr{sub 2}Ca{sub 1-x}Y{sub x}Cu{sub 2}O{sub {proportional to}} {sub 8} system point toward the coupling of the charge carriers with distortions of the Cu sites driven by the m{sub l}=0 character of the Cu 3d holes that can be called a 3d{sub z}2{sub -r}2 polaron. (orig.).

  14. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  15. Effective cytoplasmic release of siRNA from liposomal carriers by controlling the electrostatic interaction of siRNA with a charge-invertible peptide, in response to cytoplasmic pH

    Science.gov (United States)

    Itakura, Shoko; Hama, Susumu; Matsui, Ryo; Kogure, Kentaro

    2016-05-01

    Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is effectively released via electrostatic repulsion of siRNA with negatively charged SAPSP at cytoplasmic pH (7.4). The condensed complex of siRNA and positively-charged SAPSP at acidic pH (siRNA/SAPSP) was found to result in almost complete release of siRNA upon charge inversion of SAPSP at pH 7.4, with the resultant negatively-charged SAPSP having no undesirable interactions with endogenous mRNA. Moreover, liposomes encapsulating siRNA/SAPSP demonstrated knockdown efficiencies comparable to those of commercially available siRNA carriers. Taken together, SAPSP may be very useful as a siRNA condenser, as it facilitates effective cytoplasmic release of siRNA, and subsequent induction of specific RNAi effects.Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is

  16. Elucidating the band structure and free charge carrier dynamics of pure and impurities doped CH3NH3PbI(3-x)Cl(x) perovskite thin films.

    Science.gov (United States)

    Zhang, Zhen-Yu; Chen, Xin; Wang, Hai-Yu; Xu, Ming; Gao, Bing-Rong; Chen, Qi-Dai; Sun, Hong-Bo

    2015-11-28

    CH3NH3PbI3-xClx perovskite material has been commonly used as the free charge generator and reservoir in highly efficient perovskite-based solid-state solar photovoltaic devices. However, many of the underlying fundamental photophysical mechanisms in this material such as the perovskite transition band structure as well as the dependent relationship between the carrier properties and lattice properties still lack sufficient understanding. Here, we elucidated the fundamental band structure of the pure CH3NH3PbI3-xClx pervoskite lattice, and then reported about the dependent relationship between the free charge carrier characteristic and the different CH3NH3PbI3-xClx pervoskite lattice thin films utilizing femtosecond time-resolved pump-probe technologies. The data demonstrated that the pure perovskite crystal band structure should only have one conduction and one valence band rather than dual valences, and the pure perovskite lattice could trigger more free charge carriers with a slower recombination rate under an identical pump intensity compared with the impurities doped perovskite crystal. We also investigated the perovskite film performance when exposed to moisture and water, the corresponding results gave us a dip in the optimization of the performance of perovskite based devices, and so as a priority this material should be isolated from moisture (water). This work may propose a deeper perspective on the comprehension for this material and it is useful for future optimization of applications in photovoltaic and light emission devices. PMID:26497219

  17. Radionuclide carriers

    International Nuclear Information System (INIS)

    A new carrier for radionuclide technetium 99m has been prepared for scintiscanning purposes. The new preparate consists of physiologically acceptable water-insoluble Tcsup(99m)-carrier containing from 0.2 to 0.8 weight percent of stannic ion as reductor, bound to an anionic starch derivative with about 1-20% of phosphate substituents. (EG)

  18. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    the majority of its foreign trade, as well as its oil imports, upon which the country is totally dependent. China therefore has good reasons for acquiring an aircraft carrier to enable it to protect its national interests. An aircraft carrier would also be a prominent symbol of China’s future status...... information is pieced together, then a picture is created of a Chinese aircraft carrier program, where Varyag will be made operational for training purposes. With this as the model, China will build a similar sized carrier themselves. If this project does become a reality, then it will take many years for...... Kuznetsov carrier. The SU-33 is, in its modernized version, technologically at the same level as western combat aircraft in both the offensive as well as the defensive roles. But Russia and China currently have an arms trade 6 dispute that is likely to prevent a deal, unless the dispute is resolved. As an...

  19. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p+ layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p+ layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p+ layer leads to

  20. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    as a great power in Asia and will balance the carrier acquisitions of the United States, the United Kingdom, Russia and India. China’s current military strategy is predominantly defensive, its offensive elements being mainly focused on Taiwan. If China decides to acquire a large carrier with...... offensive capabilities, then the country will also acquire the capability to project military power into the region beyond Taiwan, which it does not possess today. In this way, China will have the military capability to permit a change of strategy from the mainly defensive, mainland, Taiwan-based strategy...... to a more assertive strategy, with potentially far-reaching consequences for the countries of the region. The Chinese have bought several retired carriers, which they have studied in great detail. The largest is the Russian-built carrier Varyag of the Kuznetsov class, which today is anchored in the...

  1. High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

    OpenAIRE

    Wang, Wangping; Hou, Ying; Xiong, Dayuan; Li, Ning; Lu, Wei

    2007-01-01

    We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the ...

  2. Model of the influence of energetic disorder on inter-chain charge carrier mobility in poly[2-methoxy-5-(2´-ethylhexyloxy)-p-phenylene vinylene

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr; Nešpůrek, Stanislav; Weiter, M.; Vala, M.; Sworakowski, J.; Bartkowiak, W.; Menšík, Miroslav

    2009-01-01

    Roč. 20, č. 3 (2009), s. 263-267. ISSN 1042-7147 Institutional research plan: CEZ:AV0Z40500505 Keywords : charge transport * conducting polymers * photochromism Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.532, year: 2009

  3. Effect of traps on the transport of charge carriers in single chains of conjugated polymers and in their macroscopic ensembles. A kinetic approach

    Czech Academy of Sciences Publication Activity Database

    Sworakowski, J.; Nešpůrek, Stanislav

    Sao Paulo : University of Sao Paulo, 2005, s. 360-363. ISBN 0-7803-9116-0. [International Symposium on Electrets /12./. Salvador (BR), 11.09.2005-14.09.2005] Institutional research plan: CEZ:AV0Z40500505 Keywords : charge transport * traps * conjugated polymer Subject RIV: CD - Macromolecular Chemistry

  4. A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se4 and Cu(In,GaSe2 thin film solar cells

    Directory of Open Access Journals (Sweden)

    Mohammad Abdul Halim

    2016-03-01

    Full Text Available A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se4 (CZTSSe and the CuInGaSe2 (CIGS solar cells has been carried out. For this purpose, electroluminescence (EL and also bias-dependent time resolved photoluminescence (TRPL using femtosecond (fs laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  5. Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

    Science.gov (United States)

    Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-06-01

    The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells. PMID:27157358

  6. Influence of external chloride concentration on the kinetics of mobile charges in the cell membrane of Valonia utricularis: Evidence for the existence of a chloride carrier

    OpenAIRE

    Wang, Jianning; Wehner, Günter; Benz, Roland; Zimmermann, Ulrich

    1991-01-01

    Charge pulse relaxation studies were performed on cells of the giant marine alga Valonia utricularis. Two exponential voltage relaxations were recorded as found previously (Benz, R., and U. Zimmermann. 1983. Biophys. J. 43:13-26.). The parameters of the two exponential voltage decays were studied as a function of the chloride concentration in the artificial sea water. Replacement of external chloride by 2(N-morpholino)ethanesulfonate (Mes-) had a dramatic influence on the four relaxation para...

  7. Effect of the charge carrier drift on emission spectrum of the graded band-gap semiconductors in the built-in quasi-electric field

    International Nuclear Information System (INIS)

    The shape of band-to-band spectrum of graded band-gap semiconductor under conditions of nonequilibrium carrier transfer caused by the built-in quasi-electric field E is calculated. It is shown that deformation of the short wave-length part of the spectrum results from the co-ordinate dependence of the radiation recombination probability in the half-band area of a crystal. The results of calculations are confirmed by experimental measurements of photoluminescence spectra of undoped (n ≤ 1 · 1016 cm-3) graded band-gap AlxGa1-xAs solid solution with E varying in 90-650 V/cm range at 300 K

  8. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    International Nuclear Information System (INIS)

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects

  9. Characterization of charge carrier collection in a CdZnTe Frisch collar detector with a highly collimated 137Cs source

    International Nuclear Information System (INIS)

    A 4.7 x4.7x9.5 mm3 CdZnTe Frisch collar device was characterized through probing the device with a highly collimated 137Cs 662 keV gamma ray source. In a systematic series of experiments, the detector was probed along the length and width with a 137Cs gamma ray source using a 43.0 mm long Pb-collimator with a 0.6 mm circular hole. The detector was probed along the central line under different operating voltages of 1200, 1000, 800, 600 and 400 V. The experimental results correlated well to charge collection calculations for a modeled device with the same size and operating conditions. It was proved that, unlike the planar configuration, the charge collection efficiency profile along the length of Frisch collar device is considerably improved. The CdZnTe raw materials for this study were acquired from Redlen Technologies, and the Frisch collar device was fabricated and characterized at S.M.A.R.T. Laboratory at Kansas State University.

  10. Electron beam induced and microemulsion templated synthesis of CdSe quantum dots: tunable broadband emission and charge carrier recombination dynamics

    Science.gov (United States)

    Guleria, Apurav; Singh, Ajay K.; Rath, Madhab C.; Adhikari, Soumyakanti

    2015-04-01

    CdSe quantum dots (QDs) were synthesized by a rapid and one step templated approach inside the water pool of AOT (sodium bis(2-ethylhexyl) sulfosuccinate) based water-in-oil microemulsions (MEs) via electron beam (EB) irradiation technique with high dose rate, which favours high nucleation rate. The interplay of different experimental parameters such as precursor concentration, absorbed dose and {{W}0} values (aqueous phase to surfactant molar ratio) of MEs were found to have interesting consequences on the morphology, photoluminescence (PL), surface composition and carrier recombination dynamics of as-grown QDs. For instance, highly stable ultrasmall (∼1.7 nm) bluish-white light emitting QDs were obtained with quantum efficiency (η) of ∼9%. Furthermore, QDs were found to exhibit tunable broadband light emission extending from 450 to 750 nm (maximum FWHM ∼180 nm). This could be realized from the CIE (Commission Internationale d’Eclairage) chromaticity co-ordinates, which varied across the blue region to the orange region thereby, conferring their potential application in white light emitting diodes. Additionally, the average PL lifetime ≤ft( ≤ft \\right) values could be varied from 18 ns to as high as 74 ns, which reflect the role of surface states in terms of their density and distribution. Another interesting revelation was the self-assembling of the initially formed QDs into nanorods with high aspect ratios ranging from 7 to 20, in correspondence with the {{W}0} values. Besides, the fundamental roles of the chemical nature of water pool and the interfacial fluidity of AOT MEs in influencing the photophysical properties of QDs were investigated by carrying out a similar study in CTAB (cetyltrimethylammonium bromide; cationic surfactant) based MEs. Surprisingly, very profound and contrasting results were observed wherein ≤ft and η of the QDs in case of CTAB MEs were found to be at least three times lower as compared to that in AOT MEs.

  11. The influence of orientations and external electric field on charge carrier mobilities in CuPc and F16CuPc films on highly ordered pyrolytic graphite and octane-1-thiol terminated Au(111) substrates.

    Science.gov (United States)

    Chen, Shuang; Ma, Jing

    2010-10-14

    The lying-down and standing-up CuPc and F(16)CuPc films on HOPG (highly ordered pyrolytic graphite) and C8-SAM/Au(111) (octane-1-thiol terminated Au(111)) substrates are investigated by using a hybrid strategy combing the molecular dynamic (MD) simulations with density functional theory (DFT) calculations, in order to understand the influence of packing orientation on charge carrier mobilities. On the basis of the periodic slab model and consistent-valence force field, MD simulations show the populations of various packing configurations and radial distribution of intermolecular distance in the films at room temperature. It is also demonstrated that the external electric field (parallel or perpendicular to the substrate) perturbs the intermolecular distances in CuPc and F(16)CuPc films, especially for the slipped edge-to-face stackings. DFT calculations are then used to evaluate two key charge-transfer parameters, reorganization energy and transfer integral. An electrostatics embedding model is employed to approximately consider the external electrostatics contributions to reorganization energy. The thermal-averaged mobility is consequently estimated by taking account of both electronic structures of charge-hopping pairs and dynamic fluctuations in film morphologies under various experimental conditions. It is found that CuPc has smaller reorganization energy and larger hole (electron) mobilities than F(16)CuPc. Under the external electric field of 10(4)-10(7) V cm(-1), both hole and electron mobilities of CuPc and F(16)CuPc films would decrease to 1-3 orders of magnitude. CuPc (F(16)CuPc) films show substantial orientation dependence of mobilities on the ratio of standing-up versus lying-down orientations falling in the range of 10-1000. PMID:20714578

  12. Preconception Carrier Screening

    Science.gov (United States)

    ... Events Advocacy For Patients About ACOG Preconception Carrier Screening Home For Patients Search FAQs Preconception Carrier Screening ... Screening FAQ179, August 2012 PDF Format Preconception Carrier Screening Pregnancy What is preconception carrier screening? What is ...

  13. Terahertz carrier dynamics in graphene and graphene nanostructures

    DEFF Research Database (Denmark)

    Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan;

    2014-01-01

    Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

  14. Cyclodextrin carriers of positively charged porphyrin sensitizers

    Czech Academy of Sciences Publication Activity Database

    Mosinger, Jiří; Slavětínská, Lenka; Lang, Kamil; Coufal, P.; Kubát, Pavel

    2009-01-01

    Roč. 7, č. 18 (2009), s. 3797-3804. ISSN 1477-0520 R&D Projects: GA ČR GA203/08/0831; GA ČR GA203/07/1424 Institutional research plan: CEZ:AV0Z40320502; CEZ:AV0Z40400503; CEZ:AV0Z40720504 Keywords : photophysical properties * beta-cyclodextrin * photodynamic therapy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.762, year: 2009

  15. Charge carrier photogeneration in polymer nanocomposites

    Czech Academy of Sciences Publication Activity Database

    Pfleger, Jiří; Pavlík, Martin; Vohlídal, J.

    Brno : Czech Society for New Materials and Technologies, 2004, s. 194-199. ISBN 80-214-2793-0. [International Conference Nano. Brno (CZ), 13.09.2004-15.09.2004] R&D Projects: GA AV ČR IAA4050406 Keywords : nanocomposites * conjugated polymers * photoconductivity Subject RIV: CD - Macromolecular Chemistry

  16. Controlled transfer of single charge carriers

    International Nuclear Information System (INIS)

    This paper reports on the design and operation of two devices, the turnstile and the pump, that transfer electrons one by one. They are both based on the existence of stable electrostatic configurations in arrays of ultrasmall tunnel junctions. While the turnstile only works in the normal state the pump could in principle achieve the transfer of single Cooper pairs

  17. Charge carrier mobility in cationic polythiophene polyelectrolyte

    Czech Academy of Sciences Publication Activity Database

    Kazim, Samrana; Rais, David; Pfleger, Jiří; Bondarev, D.; Vohlídal, J.

    Kanpur : Indian Institute of Technology, 2011. OE-P.20. [International Workshop on the Physics of Semiconductor Devices /16./ - IWPSD 2011. 19.12.2011-22.12.2011, Kanpur] R&D Projects: GA ČR GAP208/10/0941 EU Projects: European Commission(XE) 247745 - FlexNet Institutional research plan: CEZ:AV0Z40500505 Keywords : CELIV * TOF * mobility Subject RIV: CF - Physical ; Theoretical Chemistry

  18. What Is Carrier Screening?

    Science.gov (United States)

    ... you want to learn. Search form Search Carrier screening You are here Home Testing & Services Testing for ... help you make the decision. What Is Carrier Screening? Carrier screening checks if a person is a " ...

  19. HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT

    OpenAIRE

    Przyrembel, G.; Mahnkopf, R.; Wagemann, H.

    1988-01-01

    The influence of synchrotron-light irradiation for p- and n-channel MOSFET's on their sensitivity to hot carrier degradation was investigated. The radiation induces additional interface states and a positive oxide charge. Annealing at 450°C reduces the interface state density to its initial value but not the oxide charge. A hot carrier stress can compensate this remaining charge by trapping electrons. This effect produces an enhanced shift of the threshold voltage compared to non-irradiated d...

  20. Charge correlations in polaron hopping through molecules

    OpenAIRE

    Schmidt, Benjamin B.; Hettler, Matthias H.; Schön, Gerd

    2009-01-01

    In many organic molecules the strong coupling of excess charges to vibrational modes leads to the formation of polarons, i.e., a localized state of a charge carrier and a molecular deformation. Incoherent hopping of polarons along the molecule is the dominant mechanism of transport at room temperature. We study the far-from-equilibrium situation where, due to the applied bias, the induced number of charge carriers on the molecule is high enough such that charge correlations become relevant. W...

  1. Hot Carrier extraction with plasmonic broadband absorbers

    CERN Document Server

    Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J; Mulvaney, Paul; Gomez, Daniel E

    2016-01-01

    Hot charge carrier extraction from metallic nanostructures is a very promising approach for applications in photo-catalysis, photovoltaics and photodetection. One limitation is that many metallic nanostructures support a single plasmon resonance thus restricting the light-to-charge-carrier activity to a spectral band. Here we demonstrate that a monolayer of plasmonic nanoparticles can be assembled on a multi-stack layered configuration to achieve broad-band, near-unit light absorption, which is spatially localised on the nanoparticle layer. We show that this enhanced light absorbance leads to $\\sim$ 40-fold increases in the photon-to-electron conversion efficiency by the plasmonic nanostructures. We developed a model that successfully captures the essential physics of the plasmonic hot-electron charge generation and separation in these structures. This model also allowed us to establish that efficient hot carrier extraction is limited to spectral regions where the photons possessing energies higher than the S...

  2. Nonlinear screening of charge impurities in graphene

    OpenAIRE

    2006-01-01

    It is shown that a ``vacuum polarization'' induced by Coulomb potential in graphene leads to a strong suppression of electric charges even for undoped case (no charge carriers). A standard linear response theory is therefore not applicable to describe the screening of charge impurities in graphene. In particular, it overestimates essentially the contributions of charge impurities into the resistivity of graphene.

  3. Clusters of dislocations in a carrier wave

    International Nuclear Information System (INIS)

    Clusters of point dislocations (wave vortices) may be present within an otherwise perfect plane scalar wave, a carrier wave in two dimensions, which may be evanescent. The question arises: is it possible to deduce the orientation of the distant undisturbed carrier wave purely from local information about the cluster itself? For groups of two and four dislocations in a carrier wave, this may be done by using no other information than the local phase map or the individual positions of the singularities. The maximum number possible in a cluster with a carrier wave is 4 and the total strength (topological charge) of a cluster is always zero or ± 2. The study includes an examination of degenerate dislocations of strength zero or ± 1

  4. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  5. Peptide-Carrier Conjugation

    DEFF Research Database (Denmark)

    Hansen, Paul Robert

    To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined.......To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....

  6. Asymmetric Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Rasmussen, Peter Omand;

    2010-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on the measurements, it is shown that the spread effect of the discrete components from the motor current spectra is very effective independent of the modulation...

  7. Separation and recombinatiuon of charge carriers in solar cells with a nanostructured ZnO electrode; Trennung und Rekombination von Ladungstraegern in Solarzellen mit nanostrukturierter ZnO-Elektrode

    Energy Technology Data Exchange (ETDEWEB)

    Tornow, Julian

    2010-03-02

    The publication investigates electrodes consisting of ZnO nanorods deposited hydrothermally on conductive glass substrate (conductive glass). The electrodes are transparent to visible light and are sensitized for solar cell applications by a light-absorbing layer which in this case consists either of organometallic dye molecules (N3) or of an indium sulfide layer with a thickness of only a few nanometers. Electric contacts for the sensitized electrode are either made of a liquid electrolyte or of a perforated solid electrolyte. Methods of analysis were impedance spectroscopy, time-resolved photocurrent measurements, and time-resolved microwave photoconductivity. A high concentration of up to 10{sup 20} was found in the ZnO nanorods. The dye-sensitized solar cell showed exessively fast recombination with the oxydized dye molecules (sub-{mu}s) but a slow recombination rate with the oxydized redox ions of the electrolyte (ms). In the indium sulfide solar cells, the charges are separated at the contact with the ZnO nanorods while contact with the perforated CuSCN conductor is not charge-separating. Recombination takes place in indium sulfide, directly between the perforated conductor and ZnO, and also via the charge-separating contact with decreasing rates.

  8. Managing photons and carriers for photocatalysis

    Science.gov (United States)

    Thomann, Isabell; Robatjazi, Hossein; Bahauddin, Shah; Doiron, Chloe; Liu, Xuejun; Tumkur, Thejaswi; Wang, Wei-Ren; Wray, Parker

    While small plasmonic nanoparticles efficiently generate energetic hot carriers, light absorption in a monolayer of such particles is inefficient, and practical utilization of the hot carriers in addition requires efficient charge-separation. Here we describe our approach to address both challenges. By designing an optical cavity structure for the plasmonic photoelectrode, light absorption in these particles can be significantly enhanced, resulting in efficient hot electron generation. Rather than utilizing a Schottky barrier to preserve the energy of the carriers, our structure allows for their direct injection into the adjacent electrolyte. On the substrate side, the plasmonic particles are in contact with a wide band gap oxide film that serves as an electron blocking layer but accepts holes and transfers them to the counter electrode. The observed photocurrent spectra follow the plasmon spectrum, and demonstrate that the extracted electrons are energetic enough to drive the hydrogen evolution reaction. A similar structure can be designed to achieve broadband absorption enhancement in monolayer MoS2. Time permitting, I will discuss charge carrier dynamics in hybrid nanoparticles composed of plasmonic / two-dimensional materials, and applications of photo-induced force microscopy to study photocatalytic processes.

  9. Enhanced spin–orbit coupling and charge carrier density suppression in LaAl1−xCrxO3/SrTiO3 hetero-interfaces

    International Nuclear Information System (INIS)

    We report a gradual suppression of the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface on substitution of chromium at the Al sites. The sheet carrier density at the interface (n□) drops monotonically from ∼2.2 × 1014 cm−2 to ∼2.5 × 1013 cm−2 on replacing ≈60% of the Al sites by Cr and the sheet resistance (R□) exceeds the quantum limit for localization (h/2e2) in the concentrating range 40–60% of Cr. The samples with Cr ⩽40% show a distinct minimum (Tm) in metallic R□(T) whose position shifts to higher temperatures on increasing the substitution. Distinct signatures of Rashba spin–orbit interaction (SOI) induced magnetoresistance (MR) are seen in R□ measured in out of plane field (H⊥) geometry at T ⩽ 8 K. Analysis of these data in the framework of Maekawa–Fukuyama theory allows extraction of the SOI critical field (HSO) and time scale (τSO) whose evolution with Cr concentration is similar as with the increasing negative gate voltage in LAO/STO interface. The MR in the temperature range 8 K ⩽ T ⩽ Tm is quadratic in the field with a +ve sign for H⊥ and −ve sign for H∥. The behaviour of H∥ MR is consistent with Kondo theory which in the present case is renormalized by the strong Rashba SOI at T < 8 K. (paper)

  10. Duchenne muscular dystrophy carriers

    International Nuclear Information System (INIS)

    By means of magnetic resonance imaging (MRI), the proton spin-lattice relaxation times (T1 values) of the skeletal muscles were measured in Duchenne muscular dystrophy (DMD) carriers and normal controls. The bound water fraction (BWF) was calculated from the T1 values obtained, according to the fast proton diffusion model. In the DMD carriers, T1 values of the gluteus maximus and quadriceps femoris muscles were significantly higher, and BWFs of these muscles were significantly lower than in normal control. Degenerative muscular changes accompanied by interstitial edema were presumed responsible for this abnormality. No correlation was observed between the muscle T1 and serum creatine kinase values. The present study showed that MRI could be a useful method for studying the dynamic state of water in both normal and pathological skeletal muscles. Its possible utility for DMD carrier detection was discussed briefly. (orig.)

  11. Charge transport in disordered materials

    Science.gov (United States)

    Gagorik, Adam Gerald

    This thesis is focused on on using Monte Carlo simulation to extract device relevant properties, such as the current voltage behavior of transistors and the efficiency of photovoltaics, from the hopping transport of molecules. Specifically, simulation is used to study organic field-effect transistors (OFETs) and organic photo-voltaics (OPVs). For OFETs, the current was found to decrease with increasing concentration of traps and barriers in the system. As the barrier/trap concentration approaches 100%, the current recovers as carrier begin to travel through the manifold of connected trap states. Coulomb interactions between like charges are found to play a role in removing carriers from trap states. The equilibrium current in OFETs was found to be independent of charge injection method, however, the finite size of devices leads to an oscillatory current. Fourier transforms of the electrical current show peaks that vary non-linearly with device length, while being independent of device width. This has implications for the mobility of carriers in finite sized devices. Lastly, the presence of defects and high barriers (> 0.4 eV) was found to produce negative differential resistance in the saturation region of OFET curves, unlike traps. While defects and barriers prohibit carriers from reaching the drain at high voltages, the repulsive interaction between like charged carriers pushes charges around the defects. For OPVs, the effects of device morphology and charge delocalization were studied. Fill factors increased with domain size in monolayer isotropic morphologies, but decreased for band morphologies. In single-phase systems without Coulomb interactions, astonishingly high fill factors (. 70%) were found. In multilayer OPVs,a complex interplay of domain size, connectivity, tortuosity, interface trapping, and delocalization determined efficiency.

  12. Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC,continuous expressions of surface potential and inversion layer carrier density are derived.Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.

  13. Intestinal solute carriers

    DEFF Research Database (Denmark)

    Steffansen, Bente; Nielsen, Carsten Uhd; Brodin, Birger; Eriksson, André Huss; Andersen, Rikke; Frokjaer, Sven

    2004-01-01

    A large amount of absorptive intestinal membrane transporters play an important part in absorption and distribution of several nutrients, drugs and prodrugs. The present paper gives a general overview on intestinal solute carriers as well as on trends and strategies for targeting drugs and...

  14. Glycosylation of solute carriers

    DEFF Research Database (Denmark)

    Pedersen, Nis Borbye; Carlsson, Michael C; Pedersen, Stine Helene Falsig

    2016-01-01

    Solute carriers (SLCs) are one of the largest groups of multi-spanning membrane proteins in mammals and include ubiquitously expressed proteins as well as proteins with highly restricted tissue expression. A vast number of studies have addressed the function and organization of SLCs as well as...

  15. Information and Its Carriers.

    Science.gov (United States)

    Herrmann, F.; And Others

    1985-01-01

    Describes: (1) the structure of a data transmission source, carrier, and receiver; (2) a quantitative measure for the amount of data, followed by some quantitative examples of data transmission processes; (3) the concept of data current; (4) data containers; and (5) how this information can be used to structure physics courses. (JN)

  16. Two-Dimensional Charge Transport in Disordered Organic Semiconductors

    OpenAIRE

    Brondijk, J. J.; Roelofs, WSC Christian; Mathijssen, SGJ Simon; Shehu, A; Cramer, T.; Biscarini, F Fabio; Blom, PWM Paul; Leeuw, van der, R.

    2012-01-01

    We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides access to a previously unexplored charge-transport regime and is reflected by a reduced temperature dependence of the transfer curves of organic monolayer transistors.

  17. Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells

    KAUST Repository

    Melianas, Armantas

    2015-11-05

    In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium.

  18. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  19. Screening-induced carrier transport in silicene

    International Nuclear Information System (INIS)

    Based on the Boltzmann transport equation in the MRT approximation, we present a theory to investigate low-field carrier transport in dual-gated silicene FETs by taking into account screened charged impurity scattering, which is the most likely scattering mechanism limiting the conductivity. Static RPA dielectric screening is also included in the conductivity calculation to study temperature-dependent silicene transport. It is found that both calculated conductivity and band gap not only depend strongly on carrier sheet density, but also depend strongly on effective offset density. More importantly, screening-induced metal-insulator-transition phenomena in buckled silicene can be observed theoretically, which is similar to that obtained in monolayer graphene. (paper)

  20. Monte Carlo Studies of Charge Transport Below the Mobility Edge

    OpenAIRE

    Jakobsson, Mattias

    2012-01-01

    Charge transport below the mobility edge, where the charge carriers are hopping between localized electronic states, is the dominant charge transport mechanism in a wide range of disordered materials. This type of incoherent charge transport is fundamentally different from the coherent charge transport in ordered crystalline materials. With the advent of organic electronics, where small organic molecules or polymers replace traditional inorganic semiconductors, the interest for this type of h...

  1. Effects of induced charge in the kinestatic charge detector.

    Science.gov (United States)

    Wagenaar, D J; Terwilliger, R A

    1995-05-01

    The principle of the kinestatic charge detector (KCD) for digital radiography depends on the synchronization of the scan velocity of a parallel plate drift chamber with the cation drift velocity. Compared with line-beam scanners, this motion-compensated imaging technique makes better use of the x-ray tube output. A Frisch grid traditionally has been used within the KCD to minimize unwanted signal contributions from both cations and negative charge carriers during irradiation. In this work the charge induction process in a parallel plate geometry was investigated for the special case of the KCD. In the limit of infinite plates, the cathode charge density due to both cations and negative charge carriers increases quadratically in time for a kinestatically scanned narrow slit. In the KCD the cathode is segmented into an array of narrow electrodes, each aligned with the incident x-ray beam. Our conformal mapping computation determined that the shape of the induced charge signal depends critically on delta x/w, the ratio of electrode width to drift gap. Our conclusion introduces the possibility of eliminating the Frisch grid from the KCD design because the value of delta x/w required for transverse sampling in the KCD is sufficiently low as to allow "self-gridding" to take effect. PMID:7643803

  2. Hungarian students’ carrier aspirations

    Directory of Open Access Journals (Sweden)

    A.S. Gubik

    2014-06-01

    Full Text Available The article analyzes the students’ carrier aspiration, right after their graduation and five years after their studies. It examines the differences arising from the students’ family business background and their most important social variables (gender, age. Then the study highlights the effects of study field on the students’ intention. The direct effect of education on starting an enterprise is undiscovered in the literature, the paper deals with the influence of availability and services use, offered by higher institutions.

  3. Comparison of human solute carriers

    OpenAIRE

    Schlessinger, Avner; Matsson, Pär; Shima, James E.; Pieper, Ursula; Yee, Sook Wah; Kelly, Libusha; Apeltsin, Leonard; Stroud, Robert M.; Ferrin, Thomas E; Giacomini, Kathleen M.; Sali, Andrej

    2010-01-01

    Solute carriers are eukaryotic membrane proteins that control the uptake and efflux of solutes, including essential cellular compounds, environmental toxins, and therapeutic drugs. Solute carriers can share similar structural features despite weak sequence similarities. Identification of sequence relationships among solute carriers is needed to enhance our ability to model individual carriers and to elucidate the molecular mechanisms of their substrate specificity and transport. Here, we desc...

  4. Fractional charges

    International Nuclear Information System (INIS)

    20 years ago fractional charges were imagined to explain values of conductivity in some materials. Recent experiments have proved the existence of charges whose value is the third of the electron charge. This article presents the experimental facts that have led theorists to predict the existence of fractional charges from the motion of quasi-particles in a linear chain of poly-acetylene to the quantum Hall effect. According to the latest theories, fractional charges are neither bosons nor fermions but anyons, they are submitted to an exclusive principle that is less stringent than that for fermions. (A.C.)

  5. Carrier transport uphill. I. General

    DEFF Research Database (Denmark)

    Rosenberg, T; Wilbrandt, W

    1963-01-01

    A quantitative treatment of a carrier pump operating with two carrier forms C and Z is presented. Asymmetric metabolic reactions are assumed to transform Z into C on one and C into Z on the other side of the membrane, establishing a carrier cycle. The kinetical consequences of this mechanism are...

  6. Maintainable substrate carrier for electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chen-An; Abas, Emmanuel Chua; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor; Ma, Diana Xiaobing

    2016-08-02

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

  7. Inhomogeneous and nonstationary Hall states of the CDW with quantized normal carriers

    OpenAIRE

    Brazovskii, Serguei

    2015-01-01

    We suggest a theory for a deformable and sliding charge density wave (CDW) in the Hall bar geometry for the quantum limit when the carriers in remnant small pockets are concentrated at lowest Landau levels (LL) forming a fractionally ($\

  8. Hybridization-Induced Carrier Localization at the C60/ZnO Interface

    Energy Technology Data Exchange (ETDEWEB)

    Kelly, Leah L.; Racke, David A.; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K.; Berry, Joseph J.; Graham, Samuel; Nordlund, Dennis; Monti, Oliver L. A.

    2016-05-25

    Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

  9. Long-Lived Hot Carriers in III-V Nanowires.

    Science.gov (United States)

    Tedeschi, D; De Luca, M; Fonseka, H A; Gao, Q; Mura, F; Tan, H H; Rubini, S; Martelli, F; Jagadish, C; Capizzi, M; Polimeni, A

    2016-05-11

    Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs. PMID:27104870

  10. Capture and release of carriers in InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Porte, Henrik; Daghestani, N.; Wilcox, K.G.; Rafailov, E.U.; Jepsen, Peter Uhd

    2009-01-01

    We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD s...

  11. Charged Condensation

    CERN Document Server

    Gabadadze, Gregory

    2008-01-01

    We consider Bose-Einstein condensation of massive electrically charged scalars in a uniform background of charged fermions. We focus on the case when the scalar condensate screens the background charge, while the net charge of the system resides on its boundary surface. A distinctive signature of this substance is that the photon acquires a Lorentz-violating mass in the bulk of the condensate. Due to this mass, the transverse and longitudinal gauge modes propagate with different group velocities. We give qualitative arguments that at high enough densities and low temperatures a charged system of electrons and helium-4 nuclei, if held together by laboratory devices or by force of gravity, can form such a substance. We briefly discuss possible manifestations of the charged condensate in compact astrophysical objects.

  12. Autonomous component carrier selection

    DEFF Research Database (Denmark)

    Garcia, Luis Guilherme Uzeda; Pedersen, Klaus; Mogensen, Preben

    2009-01-01

    in local areas, basing our study case on LTE-Advanced. We present extensive network simulation results to demonstrate that a simple and robust interference management scheme, called autonomous component carrier selection allows each cell to select the most attractive frequency configuration; improving...... management and efficient system operation. Due to the expected large number of user-deployed cells, centralized network planning becomes unpractical and new scalable alternatives must be sought. In this article, we propose a fully distributed and scalable solution to the interference management problem...

  13. A molecular device based on light controlled charge carrier mobility

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Sworakowski, J.; Combellas, C.; Wang, Geng; Weiter, M.

    2004-01-01

    Roč. 234, 1-4 (2004), s. 395-402. ISSN 0169-4332. [International Conference on the Formation of Semiconductor Interfaces /9./. Madrid, 15.09.2003-19.09.2003] R&D Projects: GA MŠk OC D14.30 Institutional research plan: CEZ:AV0Z4050913 Keywords : electrical properties * photoconductivity * photochromism Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.497, year: 2004

  14. Hall effect: the role of nonequilibrium charge carriers

    Directory of Open Access Journals (Sweden)

    S. Molina Valdovinos

    2011-01-01

    Full Text Available Presentamos un nuevo modelo del efecto Hall en el caso de semiconductores bipolares. Se toma en cuenta portadores fuera de equilibrio, procesos de generación y recombinación asistidos por trampas (modelo de Shockley-Read. Se obtienen expresiones para los potenciales electroquímicos de electrones y huecos, campo de Hall y constante de Hall RH. Estudiamos la dependencia de estás expresiones de la distribución de portadores a lo largo de la dirección del campo Hall, en el caso de semiconductores intrínsecos y extrínsecos.

  15. Hall effect: the role of nonequilibrium charge carriers

    OpenAIRE

    S. Molina Valdovinos; Gurevich, Yu. G.

    2011-01-01

    Presentamos un nuevo modelo del efecto Hall en el caso de semiconductores bipolares. Se toma en cuenta portadores fuera de equilibrio, procesos de generación y recombinación asistidos por trampas (modelo de Shockley-Read). Se obtienen expresiones para los potenciales electroquímicos de electrones y huecos, campo de Hall y constante de Hall RH. Estudiamos la dependencia de estás expresiones de la distribución de portadores a lo largo de la dirección del campo Hall, en el caso de semiconductore...

  16. Elimination of charge carrier trapping in diluted semiconductors

    Science.gov (United States)

    Abbaszadeh, D.; Kunz, A.; Wetzelaer, G. A. H.; Michels, J. J.; Crăciun, N. I.; Koynov, K.; Lieberwirth, I.; Blom, P. W. M.

    2016-06-01

    In 1962, Mark and Helfrich demonstrated that the current in a semiconductor containing traps is reduced by N/Ntr, with N the amount of transport sites, Nt the amount of traps and r a number that depends on the trap energy distribution. For r > 1, the possibility opens that trapping effects can be nearly eliminated when N and Nt are simultaneously reduced. Solution-processed conjugated polymers are an excellent model system to test this hypothesis, because they can be easily diluted by blending them with a high-bandgap semiconductor. We demonstrate that in conjugated polymer blends with 10% active semiconductor and 90% high-bandgap host, the typical strong electron trapping can be effectively eliminated. As a result we were able to fabricate polymer light-emitting diodes with balanced electron and hole transport and reduced non-radiative trap-assisted recombination, leading to a doubling of their efficiency at nearly ten times lower material costs.

  17. Charge Carriers and Excited States in Supramolecular Materials

    NARCIS (Netherlands)

    Patwardhan, S.

    2011-01-01

    The field of organic electronics has been thriving for the last decades due to growing commercial interest. One of the advantages of using organic materials as semiconductors is the possibility to tune their optoelectronic properties by modifying the chemical structure and organization of the buildi

  18. Interplays between charge and electric field in perovskite solar cells: charge transport, recombination and hysteresis

    OpenAIRE

    Shi, Jiangjian; Zhang, Huiyin; Xu, Xin; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2016-01-01

    Interplays between charge and electric field, which play a critical role in determining the charge transport, recombination, storage and hysteresis in the perovskite solar cell, have been systematically investigated by both electrical transient experiments and theoretical calculations. It is found that the light illumination can increase the carrier concentration in the perovskite absorber, thus enhancing charge recombination and causing the co-existence of high electric field and free carrie...

  19. LIQUIFIED NATURAL GAS (LNG CARRIERS

    Directory of Open Access Journals (Sweden)

    Daniel Posavec

    2010-12-01

    Full Text Available Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 LNG carriers currently in operation (the paper is published in Croatian.

  20. Spatial and temporal imaging of long-range charge transport in perovskite thin films by ultrafast microscopy

    OpenAIRE

    GUO, ZHI; Manser, Joseph S.; Wan, Yan; Kamat, Prashant V.; Huang, Libai

    2015-01-01

    Charge carrier diffusion coefficient and length are important physical parameters for semiconducting materials. Long-range carrier diffusion in perovskite thin films has led to remarkable solar cell efficiencies; however, spatial and temporal mechanisms of charge transport remain unclear. Here we present a direct measurement of carrier transport in space and in time by mapping carrier density with simultaneous ultrafast time resolution and ∼50-nm spatial precision in perovskite thin films usi...

  1. Charge independence and charge symmetry

    CERN Document Server

    Miller, G A; Miller, Gerald A; van Oers, Willem T H

    1994-01-01

    Charge independence and charge symmetry are approximate symmetries of nature, violated by the perturbing effects of the mass difference between up and down quarks and by electromagnetic interactions. The observations of the symmetry breaking effects in nuclear and particle physics and the implications of those effects are reviewed.

  2. Charge independence and charge symmetry

    International Nuclear Information System (INIS)

    Charge independence and charge symmetry are approximate symmetries of nature, violated by the perturbing effects of the mass difference between up and down quarks and by electromagnetic interactions. The observations of the symmetry breaking effects in nuclear and particle physics and the implications of those effects are reviewed. (author). 145 refs., 3 tabs., 11 figs

  3. NREL Studies Carrier Separation and Transport in Perovskite Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    2016-01-01

    NREL scientists studied charge separation and transport in perovskite solar cells by determining the junction structure across the solar device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates a p-n junction structure at the interface between titanium dioxide and perovskite. In addition, minority-carrier transport within the devices operates under diffusion/drift. Clarifying the fundamental junction structure provides significant guidance for future research and development. This NREL study points to the fact that improving carrier mobility is a critical factor for continued efficiency gains in perovskite solar cells.

  4. Ultrafast carrier dynamics in Landau-quantized graphene

    Directory of Open Access Journals (Sweden)

    Wendler Florian

    2015-01-01

    Full Text Available In an external magnetic field, the energy of massless charge carriers in graphene is quantized into non-equidistant degenerate Landau levels including a zero-energy level. This extraordinary electronic dispersion gives rise to a fundamentally new dynamics of optically excited carriers. Here, we review the state of the art of the relaxation dynamics in Landau-quantized graphene focusing on microscopic insights into possible many-particle relaxation channels.We investigate optical excitation into a non equilibrium distribution followed by ultrafast carrier- carrier and carrier-phonon scattering processes. We reveal that surprisingly the Auger scattering dominates the relaxation dynamics in spite of the non-equidistant Landau quantization in graphene. Furthermore, we demonstrate how technologically relevant carrier multiplication can be achieved and discuss the possibility of optical gain in Landau-quantized graphene. The provided microscopic view on elementary many-particle processes can guide future experimental studies aiming at the design of novel graphene-based optoelectronic devices, such as highly efficient photodetectors, solar cells, and spectrally broad Landau level lasers.

  5. Charged Leptons

    CERN Document Server

    Albrecht, J; Babu, K; Bernstein, R H; Blum, T; Brown, D N; Casey, B C K; Cheng, C -h; Cirigliano, V; Cohen, A; Deshpande, A; Dukes, E C; Echenard, B; Gaponenko, A; Glenzinski, D; Gonzalez-Alonso, M; Grancagnolo, F; Grossman, Y; Harnik, R; Hitlin, D G; Kiburg, B; Knoepfe, K; Kumar, K; Lim, G; Lu, Z -T; McKeen, D; Miller, J P; Ramsey-Musolf, M; Ray, R; Roberts, B L; Rominsky, M; Semertzidis, Y; Stoeckinger, D; Talman, R; Van De Water, R; Winter, P

    2013-01-01

    This is the report of the Intensity Frontier Charged Lepton Working Group of the 2013 Community Summer Study "Snowmass on the Mississippi", summarizing the current status and future experimental opportunities in muon and tau lepton studies and their sensitivity to new physics. These include searches for charged lepton flavor violation, measurements of magnetic and electric dipole moments, and precision measurements of the decay spectrum and parity-violating asymmetries.

  6. 47 CFR 69.604 - Billing and collection of access charges.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Billing and collection of access charges. 69.604 Section 69.604 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Exchange Carrier Association § 69.604 Billing and collection of...

  7. Localization of carriers in a one-dimensional electron system over liquid helium

    Science.gov (United States)

    Gladchenko, S. P.; Kovdrya, Yu. Z.; Nikolaenko, V. A.

    2000-07-01

    The mobility of carriers in a one-dimensional electron system over liquid helium has been measured at the temperature 0.5-1.7 K and for different values of linear electron density. Profiled nylon substrates with some quantity of charge deposited were used for the realization of a one-dimensional electron system. It is shown that electron mobility is dependent on the quantity of the charge on a substrate. Effects observed are explained by the localization of electrons moving in the random potential created by the substrates charge. It is supposed that at low temperatures the movement of carriers is determined by quantum effects.

  8. The mitochondrial carnitine/acylcarnitine carrier: function, structure and physiopathology.

    Science.gov (United States)

    Indiveri, Cesare; Iacobazzi, Vito; Tonazzi, Annamaria; Giangregorio, Nicola; Infantino, Vittoria; Convertini, Paolo; Console, Lara; Palmieri, Ferdinando

    2011-08-01

    The carnitine/acylcarnitine carrier (CAC) is a transport protein of the inner mitochondrial membrane that belongs to the mitochondrial carrier protein family. In its cytosolic conformation the carrier consists of a bundle of six transmembrane α-helices, which delimit a water filled cavity opened towards the cytosol and closed towards the matrix by a network of interacting charged residues. Most of the functional data on this transporter come from studies performed with the protein purified from rat liver mitochondria or recombinant proteins from different sources incorporated into phospholipid vesicles (liposomes). The carnitine/acylcarnitine carrier transports carnitine and acylcarnitines with acyl chains of various lengths from 2 to 18 carbon atoms. The mammalian transporter exhibits higher affinity for acylcarnitines with longer carbon chains. The functional data indicate that CAC plays the important function of catalyzing transport of acylcarnitines into the mitochondria in exchange for intramitochondrial free carnitine. This results in net transport of fatty acyl units into the mitochondrial matrix where they are oxidized by the β-oxidation enzymes. The essential role of the transporter in cell metabolism is demonstrated by the fact that alterations of the human gene SLC25A20 coding for CAC are associated with a severe disease known as carnitine carrier deficiency. This autosomal recessive disorder is characterized by life-threatening episodes of coma induced by fasting, cardiomyopathy, liver dysfunction, muscle weakness, respiratory distress and seizures. Until now 35 different mutations of CAC gene have been identified in carnitine carrier deficient patients. Some missense mutations concern residues of the signature motif present in all mitochondrial carriers. Diagnosis of carnitine carrier deficiency requires biochemical and genetic tests; treatment is essentially limited to important dietetic measures. Recently, a pharmacological approach based on the

  9. Metastable states of plasma particles close to a charged surface

    International Nuclear Information System (INIS)

    The free energy of the plasma particles and the charged surface that form an electroneutral system is calculated on the basis of the Poisson-Boltzmann equation. It is shown that, owing to correlation of light plasma particles near the charged surface and close to heavy particles of high charge, there can be metastable states in plasma. The corresponding phase charts of metastable states of the separate components of plasma, and plasma as a whole, are constructed. These charts depend on temperature, the charge magnitude, the size of the particles, and the share of the charge of the light carriers out of the total charge of the plasma particles

  10. Polymer coating of carrier excipients modify aerosol performance of adhered drugs used in dry powder inhalation therapy.

    Science.gov (United States)

    Traini, Daniela; Scalia, Santo; Adi, Handoko; Marangoni, Elisabetta; Young, Paul M

    2012-11-15

    The potential of excipient coating to enhance aerosol performance of micronized drugs in carrier excipient-drug blends, used in dry powder inhalers, was investigated. Both EC (ethyl cellulose) and PVP (polyvinylpyrrolidone) were used as coating agents. Carriers were prepared via sieve fractioning followed by spray drying, with and without polymer additive. Each uncoated and coated carrier salbutamol sulphate (SS) blended systems were evaluated for particle size, morphology, drug carrier adhesion and aerosolisation performance, after blending and storage for 24h. All carrier-based systems prepared had similar particle sizes and morphologies. The surface chemistries of the carriers were significantly different, as was drug-carrier adhesion and aerosolisation performance. Particle adhesion between SS and aerosol performance (fine particle fraction; FPF) followed the rank: PVP coated>un-coated>EC coated lactose. This rank order could be attributed to the surface energy measured by contact goniometry and related to the chemistry of lactose and each polymer. Storage did not significantly affect aerosol performance, however a rank increase in mean FPF value was observed for uncoated and EC coated lactose. Finally, the net electrostatic charge across the aerosol cloud indicated that the EC coated lactose transferred less charge to SS particles. The performance of each carrier system could be attributed to the carrier surface chemistry and, in general, by careful selection of the coating polymer, drug-carrier adhesion, electrostatic charge and aerosol performance could be controlled. PMID:22964399

  11. Charging transient in polyvinyl formal

    Indian Academy of Sciences (India)

    P K Khare; P L Jain; R K Pandey

    2001-08-01

    In the present paper charging and discharging transient currents in polyvinyl formal (PVF) were measured as a function of temperatures (40–80°C), poling fields (9.0 × 103–9.0 × 104 V/cm) and electrode combinations (Al–Al, Au–Al, Zn–Al, Bi–Al, Cu–Al and Ag–Al). The current–time characteristics have different values of slope lying between 0.42–0.56 and 1.42–1.63. The polarization is considered to be due to dipolar reorientation associated with structural motions and space charge relaxations due to trapping of injected charge carriers in energetically distributed traps.

  12. Carrier multiplication in silicon nanocrystals: ab initio results

    Directory of Open Access Journals (Sweden)

    Ivan Marri

    2015-02-01

    Full Text Available One of the most important goals in the field of renewable energy is the development of original solar cell schemes employing new materials to overcome the performance limitations of traditional solar cell devices. Among such innovative materials, nanostructures have emerged as an important class of materials that can be used to realize efficient photovoltaic devices. When these systems are implemented into solar cells, new effects can be exploited to maximize the harvest of solar radiation and to minimize the loss factors. In this context, carrier multiplication seems one promising way to minimize the effects induced by thermalization loss processes thereby significantly increasing the solar cell power conversion. In this work we analyze and quantify different types of carrier multiplication decay dynamics by analyzing systems of isolated and coupled silicon nanocrystals. The effects on carrier multiplication dynamics by energy and charge transfer processes are also discussed.

  13. Tuning carrier density at complex oxide interface with metallic overlayer

    Science.gov (United States)

    Zhou, Y.; Shi, Y. J.; Jiang, S. W.; Yue, F. J.; Wang, P.; Ding, H. F.; Wu, D.

    2016-06-01

    We have systematically investigated the electronic transport properties of the LaAlO3/SrTiO3 interfaces with several different metal capping layers. The sheet carrier density can be tuned in a wide range by the metallic overlayer without changing the carrier mobility. The sheet carrier density variation is found to be linearly dependent on the size of metal work function. This behavior is explained by the mechanism of the charge transfer between the oxide interface and the metal overlayer across the LaAlO3 layer. Our results confirm the existence of a built-in electric field in LaAlO3 film with an estimated value of 67.7 eV/Å. Since the metallic overlayer is essential for devices, the present phenomena must be considered for future applications.

  14. Nuclear reactor fuel elements charging tool

    International Nuclear Information System (INIS)

    To assist the loading of nuclear reactor fuel elements in a reactor core, positioning blocks with a pyramidal upper face charged to guide the fuel element leg are placed on the lower core plate. A carrier equipped with means of controlled displacement permits movement of the blocks over the lower core plate

  15. Carrier transport uphill. I. General

    DEFF Research Database (Denmark)

    Rosenberg, T; Wilbrandt, W

    1963-01-01

    A quantitative treatment of a carrier pump operating with two carrier forms C and Z is presented. Asymmetric metabolic reactions are assumed to transform Z into C on one and C into Z on the other side of the membrane, establishing a carrier cycle. The kinetical consequences of this mechanism are...... worked out with respect to net transport rate, initial rate, unidirectional fluxes including back-flow through the pump, maximum accumulation ratio, competitive inhibition and acceleration, counter transport, and metabolic poisoning. The energetics of the system are treated. The fact that the system...

  16. Basic Stand Alone Carrier Line Items PUF

    Data.gov (United States)

    U.S. Department of Health & Human Services — This release contains the Basic Stand Alone (BSA) Carrier Line Items Public Use Files (PUF) with information from Medicare Carrier claims. The CMS BSA Carrier Line...

  17. ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION

    OpenAIRE

    Mahnkopf, R.; Przyrembel, G.; Wagemann, H.

    1988-01-01

    The annealing of fixed oxide charge and interface states generated by hot-carrier stress is investigated in the temperature range of 100°C - 450°C. First order rate equations are given, which approximately describe two subsequent processes involved in the annealing and ending at neutralization. The related activation energies are determined. For comparison the annealing of synchrotron light induced damage is examined.

  18. Concentration increases in the isotopic germanium carrier solutions inferred from solution weights

    International Nuclear Information System (INIS)

    Concentration increases in the isotopic germanium carrier solutions via evaporation would produce weight losses in the carrier solutions. Since the bottle containing each carrier is usually weighed before and after the removal of carrier for a given run, the possibility exists of finding evidence for increasing carrier concentration in this record. With few exceptions the weighings were performed on the same top-loading balance in the external chemistry lab. The primary purpose was to monitor carrier usage, not to look for evidence for increasing carrier concentration. However, in order to look for this evidence, it is necessary only to compare the weights of the closed bottles between the times of carrier removal. This comparison has been performed and is reported here. Bear in mind that there is some evidence that the bottle containing carrier was not always weighted in the same way (e.g. perhaps a plastic bag was not removed from the bottle or the bottle cap was removed before weighing). Another possible source of weighing errors is the occasional buildup of static charges, especially on dry winter days. Such problems of static electricity were easily recognized and overcome. For the most part, the resulting record agrees with the assumption that the weighings were performed consistently. Carrier solution data were analyzed and a correction factor was calculated

  19. Motor carrier evaluation program plan

    International Nuclear Information System (INIS)

    The US Department of Energy (DOE) Transportation Management Program (TMP) has established a program to assist the DOE field offices and their contractors in evaluating the motor carriers used to transport DOE-owned hazardous and radioactive materials. This program was initiated to provide the DOE field offices with the tools necessary to help ensure, during this period of motor carrier deregulation, that only highly qualified carriers transport radioactive and hazardous commodities for the DOE. This program will assist DOE in maintaining their excellent performance record in the safe transportation of hazardous commodities. The program was also developed in response to public concern surrounding the transportation of hazardous materials. Representatives of other federal agencies, states, and tribal governments, as well as the news media, have expressed concern about the selection and qualification of carriers engaged in the transportation of Highway Route-Controlled Quantities (HRCQ) and Truckload (TL) quantities of radioactive material for the DOE. 8 refs

  20. Content Distribution for Telecom Carriers

    Directory of Open Access Journals (Sweden)

    Ben Falchuk

    2006-08-01

    Full Text Available Distribution of digital content is a key revenue opportunity for telecommunications carriers. As media content moves from analog and physical media-based distribution to digital on-line distribution, a great opportunity exists for carriers to claim their role in the media value chain and grow revenue by enhancing their broadband “all you can eat” high speed Internet access offer to incorporate delivery of a variety of paid content. By offering a distributed peer to peer content delivery capability with authentication, personalization and payment functions, carriers can gain a larger portion of the revenue paid for content both within and beyond their traditional service domains. This paper describes an approach to digital content distribution that leverages existing Intelligent Network infrastructure that many carriers already possess, as well as Web Services.

  1. Sustainable bioenergy carriers from wastes

    OpenAIRE

    Pereira, M.A.; Cavaleiro, A. J.; Abreu, A. A.; Costa, J.C.; Sousa, D. Z.; Alves, M.M.

    2012-01-01

    The development of new technologies for renewable energy production is crucial for decreasing the reliance in fossil fuels and improving global sustainability. Waste materials are valuable resources that can be used for the production of energy carriers. Organic wastes can be anaerobically digested to ultimately produce methane. Hydrogen can be recovered from this process, if methanogenesis is inhibited. These energy carriers can also be derived from recalcitrant materials in a two step-proce...

  2. Quantum superposition of charge states on capacitively coupled superconducting islands

    NARCIS (Netherlands)

    Heij, C.P.; Dixon, D.C.; Wal, C.H. van der; Hadley, P.; Mooij, J.E.

    2003-01-01

    We investigate the ground state properties of a system containing two superconducting islands coupled capacitively by a wire. The ground state is a macroscopic superposition of charge states, even though the islands cannot exchange charge carriers. The ground state of the system is probed by measuri

  3. Profiling Photoinduced Carrier Generation in Semiconductor Microwire Arrays via Photoelectrochemical Metal Deposition.

    Science.gov (United States)

    Dasog, Mita; Carim, Azhar I; Yalamanchili, Sisir; Atwater, Harry A; Lewis, Nathan S

    2016-08-10

    Au was photoelectrochemically deposited onto cylindrical or tapered p-Si microwires on Si substrates to profile the photoinduced charge-carrier generation in individual wires in a photoactive semiconductor wire array. Similar experiments were repeated for otherwise identical Si microwires doped to be n-type. The metal plating profile was conformal for n-type wires, but for p-type wires was a function of distance from the substrate and was dependent on the illumination wavelength. Spatially resolved charge-carrier generation profiles were computed using full-wave electromagnetic simulations, and the localization of the deposition at the p-type wire surfaces observed experimentally correlated well with the regions of enhanced calculated carrier generation in the volumes of the microwires. This technique could potentially be extended to determine the spatially resolved carrier generation profiles in a variety of mesostructured, photoactive semiconductors. PMID:27322391

  4. Charge Retention in Quantized Energy Levels of Nanocrystals

    OpenAIRE

    Dana, Aykutlu; Akca, Imran; Ergun, Orcun; Aydinli, Atilla; Turan, Rasit; Finstad, Terje

    2006-01-01

    Understanding charging mechanisms and charge retention dynamics of nanocrystal memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium nanocrystals embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of nanocrystals and that the decay is dominated by direct tunnelling. Discharge rates are calculated usin...

  5. Offset prediction for charge-balanced stimulus waveforms

    OpenAIRE

    Woods, V M; Triantis, I.; Toumazou, C.

    2011-01-01

    Functional electrical stimulation with cuff electrodes involves the controlled injection of current into an electrically excitable tissue for sensory or motor rehabilitation. Some charge injected during stimulation is 'lost' at the electrode-electrolyte interface when the charge carrier is translated from an electron to an ion in the solution. The process of charge injection through chemical reactions can reduce electrode longevity and implant biocompatibility. Conventionally, the excess char...

  6. Quantum superposition of charge states on capacitively coupled superconducting islands

    OpenAIRE

    Heij, C. P.; Dixon, D C; van der Wal, C H; Hadley, P.; Mooij, J.E.

    2003-01-01

    We investigate the ground state properties of a system containing two superconducting islands coupled capacitively by a wire. The ground state is a macroscopic superposition of charge states, even though the islands cannot exchange charge carriers. The ground state of the system is probed by measuring the switching current of a Bloch transistor containing one of the islands. Calculations based on superpositions of charge states on both islands show good agreement with the experiments. The abi...

  7. Motor Carrier Evaluation Program procedure

    International Nuclear Information System (INIS)

    The US Department of Energy (DOE) Transportation Management Division (DOE-TMD) has the overall responsibility to provide a well-managed transportation program for the safe, efficient, and economical transportation of DOE-owned material. In the performance of these duties, the DOE-TMD has established an exemplary safety record in the transportation of hazardous materials. The DOE recognizes that its responsibility for hazardous material does not end when the shipments leave the DOE sites. A special partnership is needed between the DOE, the DOE contractors, and the carriers chosen to transport hazardous materials. As in any partnership, it is critical that DOE know essential information about its partner in this joint venture. In fulfillment of its responsibility for the safe transportation of radioactive materials as well as other hazardous commodities and wastes routinely shipped from many DOE locations nationwide, the DOE-TMD has developed this policy for a motor carrier evaluation program. It is the intent of the DOE-TMD that this Motor Carrier Evaluation Program be implemented at all DOE locations to the fullest extent practicable. This program will assist in the evaluation of carriers transporting Highway Route Controlled Quantities (HRCQ) of radioactive material, because these shipments frequently are in the ''public eye.'' The program will also evaluate truckload (TL) quantity transporters of hazardous materials, including radioactive material and chemical wastes. The program has also recently been expanded to include motor carriers transporting less-than-truckload (LTL) quantities of these materials

  8. Correlation effects of excited charge carriers in semiconductor nanostructures on the example of InGaAs quantum dots and atomic MoS{sub 2} monolayers; Korrelationseffekte angeregter Ladungstraeger in Halbleiter-Nanostrukturen am Beispiel von InGaAs-Quantenpunkten und atomaren MoS{sub 2}-Monolagen

    Energy Technology Data Exchange (ETDEWEB)

    Steinhoff, Alexander

    2014-11-10

    Semiconductor nanostructures are applied in various electronic and optoelectronic devices. As miniaturization of these devices progresses, a microscopic treatment of correlations between excited carriers is essential for understanding and describing the governing physics. We investigate two different types of semiconductor nanostructures, which have each received considerable attention over the last years. These are self-assembled InGaAs quantum dots (QDs) on the one hand and atomic monolayers of MoS{sub 2} on the other hand. Self-assembled semiconductor QDs are used as active material in conventional lasers and as efficient non-classical light sources with applications in quantum information. As they can confine a small number of carriers in localized stats with discrete energies, it is questionable to neglect correlations between the carriers when describing their dynamics. We analyze the influence of carrier correlations in a single QD on Coulomb scattering processes, which are due to the contact with a quasi-continuum of wetting-layer (WL) states. Results obtained from a Boltzmann equation are compared with the fully correlated dynamics governed by a von-Neumann-Lindblad equation. In a first step, we take into account correlations generated by the exact treatment of Pauli blocking due to the contributing QD carrier configurations. Subsequently, we include correlations generated by energy renormalizations due to Coulomb interaction between the QD carriers. It is shown that at low WL carrier densities, neither Pauli correlations nor Coulomb correlations can be safely neglected, if the dynamics of single-particle states in the QD are to be predicted qualitatively and quantitatively. In the high-density regime, both types of correlations play a lesser role and thus a description of carrier dynamics by a Boltzmann equation becomes reliable. Furthermore, the efficiency of WL-assisted scattering processes as well as scattering-induced dephasing rates depending on the

  9. Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

    OpenAIRE

    Chang, Cui-Zu; Zhang, Jin-song; Liu, Min-Hao; Zhang, Zuo-Cheng; Feng, Xiao; Li, Kang; Wang, Li-Li; Chen, Xi; Dai, Xi; Fang, Zhong; Qi, Xiao-Liang; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Ma, Xu-Cun

    2011-01-01

    Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped TI requires ferromagnetism not relying on the charge carriers. We have realized the ferromagnetism independent of both polarity and density of carriers in Cr-doped BixSb2-xTe3 thin films grown by molecular beam epitaxy. Meanwhile, the anomalous Hall effect ...

  10. Charge transport in conducting polymers

    International Nuclear Information System (INIS)

    Polymers with metal-like electrical conductivity are presented as novel materials. After a short discussion of the present situation of technical applications experimental data on the electrical conductivity and its temperature and frequency dependence are reviewed. These data are discussed within the framework of a model involving fluctuation-induced tunneling between marcroscopic inhomogeneities and energy dependent hopping of charge carriers between localized states on a microscopic level. Pulsed photoconductivity measurements indicate that also in photoconductivity a hopping mechanism is dominant and solitary wave motion of conjugational defects escapes observation. (orig.)

  11. Imaging ultrafast carrier transport in nanoscale devices using femtosecond photocurrent microscopy

    CERN Document Server

    Son, B H; Hong, J T; Park, Ji-Yong; Lee, Soonil; Ahn, Y H

    2014-01-01

    One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and single- walled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic, and sensing devices. To overcome current limitations on the speed of contemporary devices, investigation of charge carrier dynamics with an ultrashort time scale is one of the primary steps necessary for developing high-speed devices. In the present study, we visualize ultrafast carrier dynamics in nanoscale devices using a combination of scanning photocurrent microscopy and time- resolved pump-probe techniques. We investigate transit times of carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Carrier dynamics have been measured for various working conditions. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias, becau...

  12. Carrier sense data highway system

    Science.gov (United States)

    Frankel, Robert

    1984-02-14

    A data transmission system includes a transmission medium which has a certain propagation delay time over its length. A number of data stations are successively coupled to the transmission medium for communicating with one another. Each of the data stations includes a transmitter for originating signals, each signal beginning with a carrier of a duration which is at least the propagation delay time of the transmission medium. Each data station also includes a receiver which receives other signals from other data stations and inhibits operation of the transmitter at the same data station when a carrier of another signal is received.

  13. Physical effect of carrier distribution in the channel of static induction thyristor

    International Nuclear Information System (INIS)

    The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution controlling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I–V characteristics and transient performances of the SITH are revealed. (semiconductor devices)

  14. 75 FR 72863 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-11-26

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration, DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that the Agency's Motor Carrier Safety Advisory Committee...

  15. 76 FR 12214 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2011-03-04

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration, DOT. ACTION: Notice: Announcement of Motor Carrier Safety Advisory Committee meeting; request for comment. SUMMARY: The Federal Motor Carrier Safety...

  16. 75 FR 50797 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-08-17

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that its Motor Carrier Safety Advisory Committee (MCSAC)...

  17. Tungsten-188/carrier-free rhenium-188 perrhenic acid generator system

    International Nuclear Information System (INIS)

    A generator system has been invented for providing a carrier-free radioisotope in the form of an acid comprises a chromatography column in tandem fluid connection with an ion exchange column, the chromatography column containing a charge of a radioactive parent isotope. The chromatography column, charged with a parent isotope, is eluted with an alkali metal salt solution to generate the radioisotope in the form of an intermediate solution, which is passed through the ion-exchange column to convert the radioisotope to a carrier-free acid form. 1 figure

  18. Tungsten-188/carrier-free rhenium-188 perrhenic acid generator system

    International Nuclear Information System (INIS)

    A generator system for providing a carrier-free radioisotope in the form of an acid comprises a chromatography column in tandem fluid connection with an ion exchange column, the chromatography column containing a charge of a radioactive parent isotope. The chromatography column, charged with a parent isotope, is eluted with an alkali metal salt solution to generate the radioisotope in the form of an intermediate solution, which is passed through the ion-exchange column to convert the radioisotope to a carrier-free acid form

  19. Role of Molecular Weight Distribution on Charge Transport in Semiconducting Polymers

    KAUST Repository

    Himmelberger, Scott

    2014-10-28

    © 2014 American Chemical Society. Model semiconducting polymer blends of well-controlled molecular weight distributions are fabricated and demonstrated to be a simple method to control intermolecular disorder without affecting intramolecular order or degree of aggregation. Mobility measurements exhibit that even small amounts of low molecular weight material are detrimental to charge transport. Trends in charge carrier mobility can be reproduced by a simple analytical model which indicates that carriers have no preference for high or low molecular weight chains and that charge transport is limited by interchain hopping. These results quantify the role of long polymer tie-chains and demonstrate the need for controlled polydispersity for achieving high carrier mobilities.

  20. Hot carrier degradation in semiconductor devices

    CERN Document Server

    2015-01-01

    This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects imp...

  1. Charged particle detectors with active detector surface for partial energy deposition of the charged particles and related methods

    Science.gov (United States)

    Gerts, David W; Bean, Robert S; Metcalf, Richard R

    2013-02-19

    A radiation detector is disclosed. The radiation detector comprises an active detector surface configured to generate charge carriers in response to charged particles associated with incident radiation. The active detector surface is further configured with a sufficient thickness for a partial energy deposition of the charged particles to occur and permit the charged particles to pass through the active detector surface. The radiation detector further comprises a plurality of voltage leads coupled to the active detector surface. The plurality of voltage leads is configured to couple to a voltage source to generate a voltage drop across the active detector surface and to separate the charge carriers into a plurality of electrons and holes for detection. The active detector surface may comprise one or more graphene layers. Timing data between active detector surfaces may be used to determine energy of the incident radiation. Other apparatuses and methods are disclosed herein.

  2. Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

    Science.gov (United States)

    Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

    2013-05-22

    The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials. PMID:23607819

  3. Charge transport in disordered semiconducting polymers driven by nuclear tunneling

    Science.gov (United States)

    van der Kaap, N. J.; Katsouras, I.; Asadi, K.; Blom, P. W. M.; Koster, L. J. A.; de Leeuw, D. M.

    2016-04-01

    The current density-voltage (J -V ) characteristics of hole-only diodes based on poly(2-methoxy, 5-(2' ethyl-hexyloxy)-p -phenylene vinylene) (MEH-PPV) were measured at a wide temperature and field range. At high electric fields the temperature dependence of the transport vanishes, and all J -V sweeps converge to a power law. Nuclear tunneling theory predicts a power law at high fields that scales with the Kondo parameter. To model the J -V characteristics we have performed master-equation calculations to determine the dependence of charge carrier mobility on electric field, charge carrier density, temperature, and Kondo parameter, using nuclear tunneling transfer rates. We demonstrate that nuclear tunneling, unlike other semiclassical models, provides a consistent description of the charge transport for a large bias, temperature, and carrier density range.

  4. Distinguishing between plasmon-induced and photo-excited carriers in a device geometry (Presentation Recording)

    Science.gov (United States)

    Zhao, Hangqi; Zheng, Bob Y.; Manjavacas, Alejandro; McClain, Michael J.; Nordlander, Peter; Halas, Naomi J.

    2015-09-01

    The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, could drastically alter how sunlight is converted into electricity or fuels by increasing the efficiency of light-harvesting devices through enhanced light-matter interactions. Surface plasmons can decay directly into energetic electron-hole pairs, or "hot" carriers, which can be used for photocurrent generation or photocatalysis. However, little has been understood about the fundamental mechanisms behind plasmonic carrier generation. Here we use metallic nano-wire based hot carrier devices on a wide-bandgap semiconductor substrate to show that plasmonic hot carrier generation is proportional to field intensity enhancement instead of bulk material absorption. We also show that interband carrier generation results in less energetic carriers than plasmon-induced generation, and a plasmon is required to inject electrons over a large energy barrier. Finite Difference Time Domain (FDTD) method is used for theoretical calculations, which match well with experimental results. This work points to a clear route to increasing the efficiency of plasmonic hot carrier devices and drastically simplifies the theoretical framework for understanding the mechanisms of hot carrier generation.

  5. Radial dependence of the carrier mobility in semiconductor nanowires

    International Nuclear Information System (INIS)

    The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent increase in available scattering channels causes strongly non-monotonic dependence of the mobility on the radius. The inter-band scattering causes sharp declines in the mobility at the wire radii at which each new channel becomes available. At intermediate radii with the number of channels unchanged the mobility is seen to maintain an exponential growth even with multiple channels. We also compare the effects of changing the radial scaling of the impurity distribution. We use transverse carrier wavefunctions that are consistent with boundary conditions and demonstrate that the δ-function approximate transverse profile leads to errors in the case of remote impurities

  6. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  7. Carrier mobility characterization of DNA-surfactant complexes

    Science.gov (United States)

    Lin, Ting-Yu; Hung, Yu-Chueh

    2012-02-01

    Deoxyribonucleic acid (DNA) biopolymer has been emerging as a promising material for photonic applications. As many optoelectronic devices rely on carrier transportation to achieve desired functionality, carrier mobility is important for the exploitation of these biopolymer-based materials for practical implementation. In this study, we present the mobility measurement by employing time-of-flight technique and characterize the current-voltage (I-V) properties based on DNA-surfactant complexes. An additional NPB layer was introduced in the fabricated structure to serve as a charge generation layer (CGL). The dependency of hole mobility with respect to the applied electric field was characterized and a linear correlation was exhibited. Hole transport was found to be dispersive, indicating a high degree energetic disorder in these DNA-surfactant complexes. The characterization results show promises for the employment of DNA complexes in the applications of organic light-emitting devices and organic field-effect transistors.

  8. Charge collection in semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Semiconductor particle-detectors operate like ion chambers by collecting the charge liberated by an incident-ionizing particle. However the mechanism of charge collection is much more complicated than that of the ion chamber, depending in detail on the properties of the semiconductor, the potential distribution in the device and the ionization density along the initial track. Loss of charge can be attributed to two effects - recombination along the initial track and subsequent trapping of the moving carriers. These effects can be separated by using particles of widely differing ionization densities. Such investigations have been carried out for various silicon devices fabricated in different ways and covering a wide range of resistivities. Analytical results have been derived applicable to the general case of charge loss through trapping, and some results have also been obtained concerning recombination loss. (author)

  9. CHARGE Association

    Directory of Open Access Journals (Sweden)

    Semanti Chakraborty

    2012-01-01

    Full Text Available We present here a case of 17-year-old boy from Kolkata presenting with obesity, bilateral gynecomastia, mental retardation, and hypogonadotrophic hypogonadism. The patient weighed 70 kg and was of 153 cm height. Facial asymmetry (unilateral facial palsy, gynecomastia, decreased pubic and axillary hair, small penis, decreased right testicular volume, non-palpable left testis, and right-sided congenital inguinal hernia was present. The patient also had disc coloboma, convergent squint, microcornea, microphthalmia, pseudohypertelorism, low set ears, short neck, and choanalatresia. He had h/o VSD repaired with patch. Laboratory examination revealed haemoglobin 9.9 mg/dl, urea 24 mg/dl, creatinine 0.68 mg/dl. IGF1 77.80 ng/ml (decreased for age, GH <0.05 ng/ml, testosterone 0.25 ng/ml, FSH-0.95 ΅IU/ml, LH 0.60 ΅IU/ml. ACTH, 8:00 A.M cortisol, FT3, FT4, TSH, estradiol, DHEA-S, lipid profile, and LFT was within normal limits. Prolactin was elevated at 38.50 ng/ml. The patient′s karyotype was 46XY. Echocardiography revealed ventricularseptal defect closed with patch, grade 1 aortic regurgitation, and ejection fraction 67%. Ultrasound testis showed small right testis within scrotal sac and undescended left testis within left inguinal canal. CT scan paranasal sinuses revealed choanalatresia and deviation of nasal septum to the right. Sonomammography revealed bilateral proliferation of fibroglandular elements predominantly in subareoalar region of breasts. MRI of brain and pituitary region revealed markedly atrophic pituitary gland parenchyma with preserved infundibulum and hypothalamus and widened suprasellar cistern. The CHARGE association is an increasingly recognized non-random pattern of congenital anomalies comprising of coloboma, heart defect, choanal atresia, retarded growth and development, genital hypoplasia, ear abnormalities, and/or deafness. [1] These anomalies have a higher probability of occurring together. In this report, we have

  10. Ultrafast charge separation in organic photovoltaics enhanced by charge delocalization and vibronically hot exciton dissociation

    CERN Document Server

    Tamura, Hiroyuki

    2013-01-01

    In organic photovoltaics, the mechanism by which free electrons and holes are generated overcoming the Coulomb attraction is a currently much debated topic. To elucidate this mechanism at a molecular level, we carried out a combined electronic structure and quantum dynamical analysis that captures the elementary events from the exciton dissociation to the free carrier generation at polymer/fullerene donor-acceptor heterojunctions. Our calculations show that experimentally observed efficient charge separations can be explained by a combination of two effects: First, the delocalization of charges which substantially reduces the Coulomb barrier, and second, the vibronically hot nature of the charge transfer state which promotes charge dissociation beyond the barrier. These effects facilitate an ultrafast charge separation even at low-band-offset heterojunctions.

  11. Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures

    International Nuclear Information System (INIS)

    We present numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. It is found that the sheet carrier density in GaN channel increases nearly linearly with the thickness of AlN although the whole thickness and equivalent Al composition of AlxGa1-xN/AlN superlattices (SLs) barrier are kept constant. This result leads to the carrier confinement capability approaches saturation with thicknesses of AlN greater than 0.6 nm. Furthermore, the influence of carrier concentration distribution on carrier mobility was discussed. Theoretical calculations indicate that the achievement of high sheet carrier density is a trade-off with mobility.

  12. Carrier Deformability in Drug Delivery.

    Science.gov (United States)

    Morilla, Maria Jose; Romero, Eder Lilia

    2016-01-01

    Deformability is a key property of drug carriers used to increase the mass penetration across the skin without disrupting the lipid barrier. Highly deformable vesicles proved to be more effective than conventional liposomes in delivering drugs into and across the mammalian skin upon topical non occlusive application. In the past five years, highly deformable vesicles have been used for local delivery of drugs on joint diseases, skin cancer, atopic dermatitis, would healing, psoriasis, scar treatment, fungal, bacteria and protozoa infections. Promising topical vaccination strategies rely also in this type of carriers. Here we provide an overview on the main structural and mechanical features of deformable vesicles, to finish with an extensive update on their latest preclinical applications. PMID:26675226

  13. Fatigue reliability for LNG carrier

    Institute of Scientific and Technical Information of China (English)

    Xiao Taoyun; Zhang Qin; Jin Wulei; Xu Shuai

    2011-01-01

    The procedure of reliability-based fatigue analysis of liquefied natural gas (LNG) carrier of membrane type under wave loads is presented. The stress responses of the hotspots in regular waves with different wave heading angles and wave lengths are evaluated by global ship finite element method (FEM). Based on the probabilistic distribution function of hotspots' short-term stress-range using spectral-based analysis, Weibull distribution is adopted and discussed for fitting the long-term probabilistic distribution of stress-range. Based on linear cumulative damage theory, fatigue damage is characterized by an S-N relationship, and limit state function is established. Structural fatigue damage behavior of several typical hotspots of LNG middle ship section is clarified and reliability analysis is performed. It is believed that the presented results and conclusions can be of use in calibration for practical design and initial fatigue safety evaluation for membrane type LNG carrier.

  14. Gemini surfactants as gene carriers

    Directory of Open Access Journals (Sweden)

    Teresa Piskorska

    2010-03-01

    Full Text Available Gemini surfactants are a new class of amphiphilic compounds built from two classic surfactant moieties bound together by a special spacer group. These compounds appear to be excellent for creating complexes with DNA and are effective in mediating transfection. Thanks to their construction, DNA carrier molecules built from gemini surfactants are able to deliver genes to cells of almost any DNA molecule size, unattainable when using viral gene delivery systems. Moreover, they are much safer for living organisms.

  15. Recursive SDN for Carrier Networks

    OpenAIRE

    McCauley, James; Liu, Zhi; Panda, Aurojit; Koponen, Teemu; Raghavan, Barath; Rexford, Jennifer; Shenker, Scott

    2016-01-01

    Control planes for global carrier networks should be programmable (so that new functionality can be easily introduced) and scalable (so they can handle the numerical scale and geographic scope of these networks). Neither traditional control planes nor new SDN-based control planes meet both of these goals. In this paper, we propose a framework for recursive routing computations that combines the best of SDN (programmability) and traditional networks (scalability through hierarchy) to achieve t...

  16. Biocheese: A Food Probiotic Carrier

    OpenAIRE

    J. M. Castro; M. E. Tornadijo; Fresno, J. M.; H. Sandoval

    2015-01-01

    This review describes some aspects related to the technological barriers encountered in the development and stability of probiotic cheeses. Aspects concerning the viability of probiotic cultures in this matrix are discussed and the potential of cheese as a biofunctional food carrier is analyzed, outlying some points related to health and safety. In general, the manufacture of probiotic cheese should have little change when compared with the elaboration of cheese in the traditional way. The ph...

  17. Conformation sensitive charge transport in conjugated polymers

    OpenAIRE

    Andersson, Mattias; Hedstrom, Svante; Persson, Petter

    2013-01-01

    Temperature dependent charge carrier mobility measurements using field effect transistors and density functional theory calculations are combined to show how the conformation dependent frontier orbital delocalization influences the hole-and electron mobilities in a donor-acceptor based polymer. A conformationally sensitive lowest unoccupied molecular orbital results in an electron mobility that decreases with increasing temperature above room temperature, while a conformationally stable highe...

  18. Preventative maintenance of straddle carriers

    Directory of Open Access Journals (Sweden)

    Si Li

    2015-02-01

    Full Text Available Background: Robotic vehicles such as straddle carriers represent a popular form of cargo handling amongst container terminal operators.Objectives: The purpose of this industry-driven study is to model preventative maintenance (PM influences on the operational effectiveness of straddle carriers.Method: The study employs historical data consisting of 21 273 work orders covering a 27-month period. Two models are developed, both of which forecast influences of PM regimes for different types of carrier.Results: The findings of the study suggest that the reliability of the straddle fleet decreases with increased intervals of PM services. The study also finds that three factors – namely resources, number of new straddles, and the number of new lifting work centres – influence the performances of straddles.Conclusion: The authors argue that this collaborative research exercise makes a significant contribution to existing supply chain management literature, particularly in the area of operations efficiency. The study also serves as an avenue to enhance relevant management practice.

  19. Responsible implementation of expanded carrier screening.

    Science.gov (United States)

    Henneman, Lidewij; Borry, Pascal; Chokoshvili, Davit; Cornel, Martina C; van El, Carla G; Forzano, Francesca; Hall, Alison; Howard, Heidi C; Janssens, Sandra; Kayserili, Hülya; Lakeman, Phillis; Lucassen, Anneke; Metcalfe, Sylvia A; Vidmar, Lovro; de Wert, Guido; Dondorp, Wybo J; Peterlin, Borut

    2016-06-01

    This document of the European Society of Human Genetics contains recommendations regarding responsible implementation of expanded carrier screening. Carrier screening is defined here as the detection of carrier status of recessive diseases in couples or persons who do not have an a priori increased risk of being a carrier based on their or their partners' personal or family history. Expanded carrier screening offers carrier screening for multiple autosomal and X-linked recessive disorders, facilitated by new genetic testing technologies, and allows testing of individuals regardless of ancestry or geographic origin. Carrier screening aims to identify couples who have an increased risk of having an affected child in order to facilitate informed reproductive decision making. In previous decades, carrier screening was typically performed for one or few relatively common recessive disorders associated with significant morbidity, reduced life-expectancy and often because of a considerable higher carrier frequency in a specific population for certain diseases. New genetic testing technologies enable the expansion of screening to multiple conditions, genes or sequence variants. Expanded carrier screening panels that have been introduced to date have been advertised and offered to health care professionals and the public on a commercial basis. This document discusses the challenges that expanded carrier screening might pose in the context of the lessons learnt from decades of population-based carrier screening and in the context of existing screening criteria. It aims to contribute to the public and professional discussion and to arrive at better clinical and laboratory practice guidelines. PMID:26980105

  20. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  1. 49 CFR 376.22 - Exemption for private carrier leasing and leasing between authorized carriers.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Exemption for private carrier leasing and leasing... MOTOR CARRIER SAFETY REGULATIONS LEASE AND INTERCHANGE OF VEHICLES Exemptions for the Leasing Regulations § 376.22 Exemption for private carrier leasing and leasing between authorized carriers....

  2. Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

    DEFF Research Database (Denmark)

    Uskov, A. V.; Jauho, Antti-Pekka; Tromborg, Bjarne;

    2000-01-01

    : second-order elastic interaction between quantum dot charge carriers and LO phonons. The calculated dephasing times are of the order of 200 fs at room temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing....

  3. Photon-activated charge domain in high-gain photoconductive switches

    Institute of Scientific and Technical Information of China (English)

    Wei Shi(施卫); Huiying Dai(戴慧莹); Xiaowei Sun(孙小卫)

    2003-01-01

    We report our experimental observation of charge domain oscillation in semi-insulating GaAs photoconductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.

  4. Determination of refractory elements in U3O8 by carrier distillation emission spectrography

    International Nuclear Information System (INIS)

    An emission spectrographic method using carrier distillation for the determination of the refractory impurities Ta, Hf, Nb, Th, and W in uranium is described. Different carriers, such as Ga2O3, AgCl, AgCl + LiF, and AgCl + NaF in various proportions, were investigated: a 1% NaF + 9% AgCl mixture as carrier at 10% of total charge arced was found to be the most suitable. Spectra were excited in a d.c. arc at 12 A and were photographed with 35-sec exposures. Palladium was used as an internal standard. The lowest limits of determination lie in the range 1 to 10 ppm for a 100-mg charge. The precision of the method is about 16% or better. (author)

  5. Low-cost carriers fare competition effect

    OpenAIRE

    Carmona Benitez, R.B.; Lodewijks, G.

    2010-01-01

    This paper examines the effects that low-cost carriers (LCC’s) produce when entering new routes operated only by full-service carriers (FSC’s) and routes operated by low-cost carriers in competition with full-service carriers. A mathematical model has been developed to determine what routes should be operated by a low-cost carrier with better possibilities to subsist. The proposed model in this paper was set up by analyzing The United States domestic air transport market 2005 year database fr...

  6. Precipitation particle charge distribution and evolution of East Asian rainbands

    Science.gov (United States)

    Takahashi, Tsutomu

    2012-11-01

    Numerous videosondes, balloon-borne surveyors of precipitation particle morphology and charge, have been launched into cloud systems in many, disparate locations in East Asia. Reported here are videosonde-based observations of early summer, Baiu rainbands at Tanegashima in southern Japan and of summer rainbands at Chiang Rai in northern Thailand. Precipitation particles are mapped by type and charge over the course of cloud development, allowing particle and charge evolution to be derived. The basic charge distribution as observed in Hokuriku winter thunderclouds at different cloud life stages was seen at different locations characterized by vertical velocity profiles in the cloud. The charge structure of the rainbands in both locations was a basic tripole. The major charge carriers were graupel and ice crystals. As graupel and ice crystal concentrations increased, not only did space charge increase, but per-particle charge also increased. Increased lightning activity was associated with higher particle space charge and lower cloud-top temperature. The particle charge evolution of these systems includes several fundamental features: a. active negative charging of graupel in an intense updraft, b. descent of negative graupel along the edge of an updraft column, c. merging of negative graupel with positively charged raindrops falling in the central cloud, and d. extended distribution of positive ice crystals in the stratiform cloud. The observations suggest that riming electrification was the main charge separation mechanism.

  7. Relationship Between Iron Oxides and Surface Charge Characteristics in Soils

    Institute of Scientific and Technical Information of China (English)

    SHAOZONG-CHEN; WANGWEI-JUN

    1991-01-01

    The relationship between iron oxides and surface charge characteristics in variable charge soils (latosol and red earth) was studied in following three ways.(1)Remove free iron oxides (Fed) and amorphous iron oxides (Feo) from the soils with sodium dithionite and acid ammonium oxalate solution respectively.(2) Add 2% glucose (on the basis of air-dry soil weight) to soils and incubate under submerged condition to activate iron oxides,and then the mixtures are dehydrated and air-dried to age iron oxides.(3) Precipitate various crystalline forms of iron oxides onto kaolinite.The results showed that free iron oxides (Fed) were the chief carrier of variable positive charges.Of which crystalline iron oxides (Fed-Feo) presented mainly as discrete particles in the soils and could only play a role of the carrier of positive charges,and did little influence on negative charges.Whereas the amorphous iron oxides (Feo),which presented mainly fas a coating with a large specific surface area,not only had positive charges,but also blocked the negative charge sites in soils.Submerged incubation activated iron oxides in the soils,and increased the amount of amorphous iron oxides and the degree of activation of iron oxide,which resulted in the increase of positive and negative charges of soils.Dehydration and air-dry aged iron oxides in soils and decreased the amount of amorphous iron oxides and the degree of activation of iron oxide,and also led to the decrease of positive and negative charges.Both the submerged incubation and the dehydration and air-dry had no significant influence on net charges.Precipitation of iron oxides onto kaolinite markedly increased positive charges and decreased negative charges.Amorphous iron oxide having a larger surface area contributed more positive charge sites and blocked more negative charge sites in kaolinite than crystalline goethite.

  8. Workplace Charging. Charging Up University Campuses

    Energy Technology Data Exchange (ETDEWEB)

    Giles, Carrie [ICF International, Fairfax, VA (United States); Ryder, Carrie [ICF International, Fairfax, VA (United States); Lommele, Stephen [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-03-01

    This case study features the experiences of university partners in the U.S. Department of Energy's (DOE) Workplace Charging Challenge with the installation and management of plug-in electric vehicle (PEV) charging stations.

  9. Impact of carriers in oral absorption

    DEFF Research Database (Denmark)

    Gram, Luise Kvisgaard; Rist, Gerda Marie; Lennernäs, Hans; Steffansen, Bente

    Carriers may mediate the permeation across enterocytes for drug substances being organic anions. Carrier mediated permeation for the organic anions estrone-3-sulfate (ES) and glipizide across Caco-2 cells were investigated kinetically, and interactions on involved carriers evaluated. Initial...... with K(m) 44microM and 38microM, respectively. BCRP inhibition affected both absorptive an exsorptive P(EPA) and P(APP) for ES. Glipizide apical P(UP) and absorptive P(APP) were not inhibitable. Basolateral P(UP) for glipizide was inhibitable, its P(EPA) prevented, and P(UP) was saturable with K(m) 56......microM, but exsorptive P(APP) was not affected. Carrier mediated exsorption kinetics for ES are seen at both apical and basolateral membranes, resulting in predominant exsorption despite presence of absorptive carrier(s). Carrier mediated basolateral P(UP) for glipizide was observed, but glipizide P...

  10. Bipolar carrier transport in tris(8-hydroxy-quinolinato) aluminum observed by impedance spectroscopy measurements

    Science.gov (United States)

    Ishihara, Shingo; Hase, Hiroyuki; Okachi, Takayuki; Naito, Hiroyoshi

    2011-08-01

    We studied bipolar carrier transport in tris(8-hydroxy-quinolinato) aluminum (Alq3) thin films using impedance spectroscopy (IS). Two transit times were observed in the impedance spectra of the Alq3 double-injection diodes. The mobilities determined from the transit times are in good agreement with the electron and the hole mobilities in Alq3 measured by IS using single injection diodes and by the time-of-flight transient photocurrent technique. The bipolar carrier transport observed in Alq3 shows that the carrier recombination of Alq3 is weak on the basis of the simulation [M. Schmeits, J. Appl. Phys. 101, 084508 (2007)]. Simultaneous measurements of electron and hole mobilities are useful in the study of charge-carrier transport in active layers in organic light-emitting diodes and organic solar cells.

  11. Dynamics, effciency and energy distribution of nonlinear plasmon-assisted generation of hot carriers

    CERN Document Server

    Demichel, O; Viarbitskaya, S; Mejard, R; de Fornel, F; Hertz, E; Billard, F; Bouhelier, A; Cluzel, B

    2016-01-01

    We employ nonlinear autocorrelation measurements to investigate plasmon-assisted hot carrier dynamics generated in optical gold antennas. We demonstrate that surface plasmons enable a nonlinear formation of hot carriers, providing thus a unique lever to optimize the energy distribution and generation efficiency of the photo-excited charges. The temporal response of the carriers' relaxation can be controlled within a range extending from 500~fs to 2.5~ps. By conducting a quantitative analysis of the dynamics, we determine the nonlinear absorption cross-section of individual optical antennas. As such, this work provides strong insights on the understanding of plasmon-induced hot carrier generation, especially in the view of applications where the time response plays a preponderant role.

  12. Ionization detector, electrode configuration and single polarity charge detection method

    Science.gov (United States)

    He, Zhong

    1998-01-01

    An ionization detector, an electrode configuration and a single polarity charge detection method each utilize a boundary electrode which symmetrically surrounds first and second central interlaced and symmetrical electrodes. All of the electrodes are held at a voltage potential of a first polarity type. The first central electrode is held at a higher potential than the second central or boundary electrodes. By forming the first and second central electrodes in a substantially interlaced and symmetrical pattern and forming the boundary electrode symmetrically about the first and second central electrodes, signals generated by charge carriers are substantially of equal strength with respect to both of the central electrodes. The only significant difference in measured signal strength occurs when the charge carriers move to within close proximity of the first central electrode and are received at the first central electrode. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge.

  13. Neural nets and chaotic carriers

    CERN Document Server

    Whittle, Peter

    2010-01-01

    ""Neural Nets and Chaotic Carriers"" develops rational principles for the design of associative memories, with a view to applying these principles to models with irregularly oscillatory operation so evident in biological neural systems, and necessitated by the meaninglessness of absolute signal levels. Design is based on the criterion that an associative memory must be able to cope with 'fading data', i.e., to form an inference from the data even as its memory of that data degrades. The resultant net shows striking biological parallels. When these principles are combined with the Freeman speci

  14. Carrier frequencies, holomorphy and unwinding

    CERN Document Server

    Coifman, Ronald R; Wu, Hau-tieng

    2016-01-01

    We prove that functions of intrinsic-mode type (a classical models for signals) behave essentially like holomorphic functions: adding a pure carrier frequency $e^{int}$ ensures that the anti-holomorphic part is much smaller than the holomorphic part $ \\| P_{-}(f)\\|_{L^2} \\ll \\|P_{+}(f)\\|_{L^2}.$ This enables us to use techniques from complex analysis, in particular the \\textit{unwinding series}. We study its stability and convergence properties and show that the unwinding series can stabilize and show that the unwinding series can provide a high resolution time-frequency representation, which is robust to noise.

  15. Technetium diagnostic agent and carrier

    International Nuclear Information System (INIS)

    A stable sup(99m)Tc-labelled radioactive diagnostic agent is produced by contacting sup(99m)Tc-containing pertechnetate with a non-radioactive carrier comprising a chelating agent, a water-soluble reducing agent and a stabilizer. The stabilizer is chosen from ascorbic acid and erythorbic acid and their pharmaceutically acceptable salts and esters. A mole ratio of more than 100 moles ascorbic or erythorbic acid to 1 mole of reducing agent provides a stable composition at high levels of radioactivity

  16. Wuestite - a solar energy carrier

    Energy Technology Data Exchange (ETDEWEB)

    Weidenkaff, A.; Nueesch, P.; Wokaun, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Reller, A. [Hamburg Univ., Hamburg (Germany)

    1997-06-01

    Hydrogen is produced when Wuestite (Fe{sub 1-y}O) is oxidised by water. This reaction is part of a two-step thermochemical metal oxide cycle for the storage of solar energy in the form of chemical energy carriers, characterised by a high chemical potential. The reaction was studied in a tubular furnace with on-line gas analysis and further characterised in detail by DTA und high-temperature X-ray powder diffraction. The influence of non-stoichiometry, morphology and temperature on the mechanism and kinetics of the water-splitting reaction was determined. (author) 3 figs., tabs., 3 refs.

  17. 78 FR 66801 - Motor Carrier Safety Advisory Committee; Charter Renewal

    Science.gov (United States)

    2013-11-06

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee; Charter Renewal AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Announcement of advisory... Committee that provides the Agency with advice and recommendations on motor carrier safety programs...

  18. Surface charge potentiates conduction through the cardiac ryanodine receptor channel

    OpenAIRE

    1994-01-01

    Single channel currents through cardiac sarcoplasmic reticulum (SR) Ca2+ release channels were measured in very low levels of current carrier (e.g., 1 mM Ba2+). The hypothesis that surface charge contributes to these anomalously large single channel currents was tested by changing ionic strength and surface charge density. Channel identity and sidedness was pharmacologically determined. At low ionic strength (20 mM Cs+), Cs+ conduction in the lumen-->myoplasm (L-->M) direction was significant...

  19. Nonlinear charge transport mechanism in periodic and disordered DNA

    OpenAIRE

    Hennig, Dirk; Archilla, Juan F. R.; J Agarwal

    2003-01-01

    We study a model for polaron-like charge transport mechanism along DNA molecules with emphasis on the impact of parametrical and structural disorder. Our model Hamiltonian takes into account the coupling of the charge carrier to two different kind of modes representing fluctuating twist motions of the base pairs and H-bond distortions within the double helix structure of $\\lambda-$DNA. Localized stationary states are constructed with the help of a nonlinear map approach for a periodic double ...

  20. Carrier detection in xeroderma pigmentosum

    International Nuclear Information System (INIS)

    We were able to detect clinically normal carriers of xeroderma pigmentosum (XP) genes with coded samples of either peripheral blood lymphocytes or skin fibroblasts, using a cytogenetic assay shown previously to detect individuals with cancer-prone genetic disorders. Metaphase cells of phytohemagglutinin-stimulated T-lymphocytes from eight individuals who are obligate heterozygotes for XP were compared with those from nine normal controls at 1.3, 2.3, and 3.3 h after x-irradiation (58 R) during the G2 phase of the cell cycle. Lymphocytes from the XP heterozygotes had twofold higher frequencies of chromatid breaks or chromatid gaps than normal (P less than 10(-5)) when fixed at 2.3 or 3.3 h after irradiation. Lymphocytes from six XP homozygotes had frequencies of breaks and gaps threefold higher than normal. Skin fibroblasts from an additional obligate XP heterozygote, when fixed approximately 2 h after x-irradiation (68 R), had a twofold higher frequency of chromatid breaks and a fourfold higher frequency of gaps than fibroblasts from a normal control. This frequency of aberrations in cells from the XP heterozygote was approximately half that observed in the XP homozygote. The elevated frequencies of chromatid breaks and gaps after G2 phase x-irradiation may provide the basis of a test for identifying carriers of the XP gene(s) within known XP families

  1. Carrier localization in gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wetzel, C. [Lawrence Berkeley National Lab., CA (United States)][California Univ., Berkeley, CA (United States); Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States); Haller, E.E. [Lawrence Berkeley National Lab., CA (United States)][California Univ., Berkeley, CA (United States)] [and others

    1996-09-01

    In wide bandgap GaN, a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 10{sup 19} to 10{sup 20} cm{sup - 3} in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models, a nitrogen vacancy acts as a donor but its formation energy is very large in n-type materials, making this suggestion controversial. We have investigated the nature of this yet unidentified donor at large hydrostatic pressure. Results from infrared reflection and Raman scattering indicate strong evidence for localization of free carriers by large pressures. The carrier density is drastically decreased by two orders of magnitude between 20 and 30 GPa. Several techniques provide independent evidence for results in earlier reports and present the first quantitative analysis. A possible interpretation of this effect in terms of the resonant donor level is presented.

  2. Effect of ferroelectric substrate on carrier mobility in graphene field-effect transistors

    Science.gov (United States)

    Bidmeshkipour, S.; Vorobiev, A.; Andersson, M. A.; Kompany, A.; Stake, J.

    2015-10-01

    Effect of LiNbO3 ferroelectric substrate on the carrier mobility in top gated graphene field-effect transistors (G-FETs) is demonstrated. It is shown that, at the same residual concentration of the charge carriers, the mobility in the G-FETs on the LiNbO3 substrate is higher than that on the SiO2/Si substrate. The effect is associated with reduction of Coulomb scattering via screening the charged impurity field by the field induced in the ferroelectric substrate, but significant only for mobilities below 1000 cm2/V s. Raman spectra analysis and correlations established between mobility and microwave loss tangent of the Al2O3 gate dielectric indicate that the charged impurities are located predominantly at the gate dielectric and/or at the gate dielectric/graphene interface and are likely associated with oxygen vacancies.

  3. Approaching Bulk Carrier Dynamics in Organo-Halide Perovskite Nanocrystalline Films by Surface Passivation.

    Science.gov (United States)

    Stewart, Robert J; Grieco, Christopher; Larsen, Alec V; Maier, Joshua J; Asbury, John B

    2016-04-01

    The electronic properties of organo-halide perovskite absorbers described in the literature have been closely associated with their morphologies and processing conditions. However, the underlying origins of this dependence remain unclear. A combination of inorganic synthesis, surface chemistry, and time-resolved photoluminescence spectroscopy was used to show that charge recombination centers in organo-halide perovskites are almost exclusively localized on the surfaces of the crystals rather than in the bulk. Passivation of these surface defects causes average charge carrier lifetimes in nanocrystalline thin films to approach the bulk limit reported for single-crystal organo-halide perovskites. These findings indicate that the charge carrier lifetimes of perovskites are correlated with their thin-film processing conditions and morphologies through the influence these have on the surface chemistry of the nanocrystals. Therefore, surface passivation may provide a means to decouple the electronic properties of organo-halide perovskites from their thin-film processing conditions and corresponding morphologies. PMID:26966792

  4. Recombination process in solar cells: Impact on the carrier transport

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, Yuri G. [Departamento de Fisica, CINVESTAV-IPN, Av. IPN 2508, Apartado Postal 14-740, Mexico D.F. 07000 (Mexico); Velazquez-Perez, Jesus E. [Departamento Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced, 37008 Salamanca (Spain)

    2012-10-15

    Thickness of Si solar cells is being reduced below 200 {mu}m to reduce costs and improve their performance. In conventional solar cells recombination of photo-generated charge carriers plays a major limiting role in the cell efficiency. High quality thin-film solar cells may overcome this limit if the minority diffusion lengths become large as compared to the cell dimensions, but, strikingly, the conventional model fails to describe the cell electric behaviour under these conditions. Moreover, it is shown that in the conventional model the reverse-saturation current diverges (tends to infinity) in thin solar cells. A new formulation of the basic equations describing charge carrier transport in the cell along with a set of boundary conditions is presented. An analytical closed-form solution is obtained under a linear approximation. In the new framework given, the calculation of the open-circuit voltage of the solar cell diode does not lead to unphysical results. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Intrinsic slow charge response in the perovskite solar cells: Electron and ion transport

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Jiangjian; Xu, Xin; Zhang, Huiyin; Luo, Yanhong; Li, Dongmei; Meng, Qingbo, E-mail: qbmeng@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing 100190 (China); Beijing Key Laboratory for New Energy Materials and Devices, Beijing 100190 (China); Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-10-19

    The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH{sub 3}NH{sub 3}PbI{sub 3} film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell.

  6. Intrinsic slow charge response in the perovskite solar cells: Electron and ion transport

    International Nuclear Information System (INIS)

    The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH3NH3PbI3 film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell

  7. Carrier Transport and Related Effects in Detectors of the Cryogenic Dark Matter Search

    Energy Technology Data Exchange (ETDEWEB)

    Sundqvist, Kyle Michael [Univ. of California, Berkeley, CA (United States)

    2012-01-01

    The Cryogenic Dark Matter Search (CDMS) is searching for weakly-interacting massive particles (WIMPS), which could explain the dark matter problem in cosmology and particle physics. By simultaneously measuring signals from deposited charge and the energy in nonequilibrium phonons created by particle interactions in intrinsic germanium crystals at a temperature of 40 mK, a signature response for each event is produced. This response, combined with phonon pulse-shape information, allows CDMS to actively discriminate candidate WIMP interactions with nuclei from electromagnetic radioactive background which interacts with electrons. The challenges associated with these techniques are unique. Carrier scattering is dominated by the spontaneous emission of Luke-Neganov phonons due to zeropoint fluctuations of the lattice ions. Drift fields are maintained at only a few V/cm, else these emitted phonons would dominate the phonons of the original interaction. The dominant systematic issues with CDMS detectors are due to the effects of space charge accumulation. It has been an open question how space charge accrues, and by which of several potential recombination and ionization processes. In this work, we have simulated the transport of electrons and holes in germanium under CDMS conditions. We have implemented both a traditional Monte Carlo technique based on carrier energy, followed later by a novel Monte Carlo algorithm with scattering rates defined and sampled by vector momentum. This vector-based method provides for a full anisotropic simulation of carrier transport including free-fight acceleration with an anisotropic mass, and anisotropic scattering rates. With knowledge of steady state carrier dynamics as a function of applied field, the results of our Monte Carlo simulations allow us to make a wide variety of predictions for energy dependent processes for both electrons and holes. Such processes include carrier capture by charged impurities, neutral impurities, static

  8. Charge-transport simulations in organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    May, Falk

    2012-07-06

    In this thesis we have extended the methods for microscopic charge-transport simulations for organic semiconductors, where weak intermolecular interactions lead to spatially localized charge carriers, and the charge transport occurs as an activated hopping process between diabatic states. In addition to weak electronic couplings between these states, different electrostatic environments in the organic material lead to a broadening of the density of states for the charge energies which limits carrier mobilities. The contributions to the method development include (i) the derivation of a bimolecular charge-transfer rate, (ii) the efficient evaluation of intermolecular (outer-sphere) reorganization energies, (iii) the investigation of effects of conformational disorder on intramolecular reorganization energies or internal site energies and (iv) the inclusion of self-consistent polarization interactions for calculation of charge energies. These methods were applied to study charge transport in amorphous phases of small molecules used in the emission layer of organic light emitting diodes (OLED). When bulky substituents are attached to an aromatic core in order to adjust energy levels or prevent crystallization, a small amount of delocalization of the frontier orbital to the substituents can increase electronic couplings between neighboring molecules. This leads to improved charge-transfer rates and, hence, larger charge-mobility. We therefore suggest using the mesomeric effect (as opposed to the inductive effect) when attaching substituents to aromatic cores, which is necessary for example in deep blue OLEDs, where the energy levels of a host molecule have to be adjusted to those of the emitter. Furthermore, the energy landscape for charges in an amorphous phase cannot be predicted by mesoscopic models because they approximate the realistic morphology by a lattice and represent molecular charge distributions in a multipole expansion. The microscopic approach shows that

  9. Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

    International Nuclear Information System (INIS)

    The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

  10. Recent Advances in Subunit Vaccine Carriers.

    Science.gov (United States)

    Vartak, Abhishek; Sucheck, Steven J

    2016-01-01

    The lower immunogenicity of synthetic subunit antigens, compared to live attenuated vaccines, is being addressed with improved vaccine carriers. Recent reports indicate that the physio-chemical properties of these carriers can be altered to achieve optimal antigen presentation, endosomal escape, particle bio-distribution, and cellular trafficking. The carriers can be modified with various antigens and ligands for dendritic cells targeting. They can also be modified with adjuvants, either covalently or entrapped in the matrix, to improve cellular and humoral immune responses against the antigen. As a result, these multi-functional carrier systems are being explored for use in active immunotherapy against cancer and infectious diseases. Advancing technology, improved analytical methods, and use of computational methodology have also contributed to the development of subunit vaccine carriers. This review details recent breakthroughs in the design of nano-particulate vaccine carriers, including liposomes, polymeric nanoparticles, and inorganic nanoparticles. PMID:27104575

  11. Inert carriers for column extraction chromatography

    International Nuclear Information System (INIS)

    Inert carriers used in column extraction chromatography are reviewed. Such carriers are devided into two large groups: hydrophilic carriers which possess high surface energy and are well wetted only with strongly polar liquids (kieselguhrs, silica gels, glasses, cellulose, Al2O3) and water-repellent carriers which possess low surface energy and are well wetted with various organic solvents (polyethylene, polytetrafluorethylene polytrifluorochlorethylene). Properties of various carriers are presented: structure, chemical and radiation stability, adsorption properties, extracting agent capacity. The effect of structure and sizes of particles on the efficiency of chromatography columns is considered. Ways of immovable phase deposition on the carrier and the latter's regeneration. Peculiarities of column packing for preparative and continuous chromatography are discussed

  12. [Time-resolved optical studies of charge relaxation and charge transfer at electrode interfaces

    Energy Technology Data Exchange (ETDEWEB)

    1992-12-31

    Key components were identified in a quantitative model of carrier relaxation in semiconductor electrodes: nonlinear aspects of nonradiative and radiative recombination, effect of space charge field on carrier dynamics, self-absorption effects in direct gas semiconductors, and influence of surface state population kinetics on charge carrier recombination. For CdSe, the first three are operative (no direct proof of the last one). A realistic kinetic model for carrier recombination in the bulk of CdSe was used which includes important nonlinear effects, both radiative and nonradiative. The change in interfacial recombination velocity with the chemical nature of the sinterface was studied (n-CdSe/silane interfaces). Temperature effect (278 to 328 K) on fluorescence decay of n-CdSe in contact with 0.5 M KOH was found to be weak. An analytical solution was obtained for time-resolved fluoresence from electrodes under potential bias, and is being tested. Fluorescence work on a different material, CdS, indicate different recombination kinetics; this material was used to directly pump an optical transition of a surface state.

  13. Global Telecommunications Services: Strategies of Major Carriers

    OpenAIRE

    Jerry Mccreary; William R. Boulton; Chetan Sankar

    1993-01-01

    The globalization of telecommunications markets is of primary concern for today’s large telecommunications carriers. International business telecommunications is growing at a rate twice that of domestic traffic. Multi-national customers with offices around the world are demanding integrated solutions to their telecommunications needs. As telecommunication carriers respond to these customers’ needs, the carriers are beginning to expand outside their national boundaries. This paper identifi...

  14. Free carrier absorption in quantum cascade structures

    OpenAIRE

    Carosella, F.; Ndebeka-Bandou, C.; Ferreira, R.; Dupont, E; K. Unterrainer; Strasser, G.; Wacker, Andreas; Bastard, G.

    2011-01-01

    We show that the free carrier absorption in Quantum Cascade Lasers is very small and radically different from the classical Drude result on account of the orthogonality between the direction of the carrier free motion and the electric field of the laser emission. A quantum mechanical calculation of the free carrier absorption and inter-subband oblique absorption induced by interface defects, coulombic impurities and optical phonon absorption/emission is presented for QCL's with a double quant...

  15. Secure quantum carriers for quantum state sharing

    OpenAIRE

    Karimipour, Vahid; Marvian, Milad

    2010-01-01

    We develop the concept of quantum carrier and show that messages can be uploaded and downloaded from this carrier and while in transit, these messages are hidden from external agents. We explain in detail the working of the quantum carrier for different communication tasks, including quantum key distribution, classical secret and quantum state sharing among a set of $n$ players according to general threshold schemes. The security of the protocol is discussed and it is shown that only the legi...

  16. Heterozygote advantage in Tay-Sachs carriers?

    OpenAIRE

    Spyropoulos, B; Moens, P B; Davidson, J.; Lowden, J. A.

    1981-01-01

    Chi-square analyses of new data as well as data previously reported by Myrianthopoulos have shown that grandparents of Tay-Sachs carriers die from proportionally the same causes as grandparents of noncarriers. It is unlikely that there is any advantage to being a Tay-Sachs carrier insofar as resistance to tuberculosis is concerned. Our results are further evidence to support Fraikor's claim that the high carrier frequency of the allele in Ashkenazi Jews is probably caused by a combination of ...

  17. Tailoring Charge Recombination in Photoelectrodes Using Oxide Nanostructures

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Wickman, Björn; Svensson, Elin;

    2016-01-01

    . The control mechanism relies on the formation of dipole-like electric fields at the interface that, depending on the field direction, attract or repel minority carriers from underneath the disks. The charge recombination rate can be controlled through the choice of oxide material and the surface coverage...

  18. Charge transport in disordered organic field-effect transistors

    NARCIS (Netherlands)

    Tanase, C; Blom, PWM; Meijer, EJ; de Leeuw, DM; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

    2002-01-01

    The transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is dependen

  19. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    International Nuclear Information System (INIS)

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices

  20. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Science.gov (United States)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  1. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

    2015-07-07

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  2. Multi-carrier technologies for wireless communication

    CERN Document Server

    Nassar, Carl R; Wu, Zhiqiang; Wiegandt, David A; Zekavat, S Alireza; Shattil, Steve

    2006-01-01

    1. Introduction. 2. Overview of Multi-Carrier Technologies. 3. High-Performance High-Capacity MC-CDMA for Future Generations: The CI Approach. 4. High Performance, High Throughput TDMA via Multi-Carrier Implementations. 5. High-Performance, High-Capacity DS-CDMA via Multicarrier Implementation. 6. High-Performance, High-Throughput OFDM with Low PAPR via Carrier Interferometry Phase Coding. 7. The Marriage of Smart Antenna Arrays and Multi-Carrier Systems: Spatial Sweeping, Transmit Diversity, and Directionality. Index.

  3. The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

    International Nuclear Information System (INIS)

    It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences

  4. 14 CFR 221.204 - Adoption of provisions of one carrier by another carrier.

    Science.gov (United States)

    2010-01-01

    ... TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS TARIFFS Electronically Filed Tariffs § 221.204... carrier, the effective and prospective fares of the adopted carrier shall be changed to reflect the...

  5. Modeling Transport in Ultrathin Si Nanowires: Charged versus Neutral Impurities

    DEFF Research Database (Denmark)

    Rurali, Riccardo; Markussen, Troels; Suné, Jordi;

    2008-01-01

    Abstract: At room temperature dopants in semiconducting nanowires are ionized. We show that the long-range electrostatic potential due to charged dopants has a dramatic impact on the transport properties in ultrathin wires and can virtually block minority carriers. Our quantitative estimates of...... this effect are obtained by computing the electronic transmission through wires with either charged or neutral P and B dopants. The dopant potential is obtained from density functional theory (DFT) calculations. Contrary to the neutral case, the transmission through charged dopants cannot be converged...

  6. High Charge Mobility of a Perylene Bisimide Dye with Hydrogen-bond Formation Group

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    A perylene bisimide dye covalently bonded with a hydrogen-bond formation group of 1,3, 5-triazine-2, 4-diamine has been synthesized. Its casting films show a charge carrier mobility over 10-3 cm2/Vs, which is in the range of the highest values found for other promising charge transport materials suitable for solution processable technique.

  7. Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO{sub 4}, Mg{sub 0.5}Co{sub 0.5}FeBO{sub 4}, CoFeBO{sub 4} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Knyazev, Yu.V. [Siberian Federal University, 660074 Krasnoyarsk (Russian Federation); Kazak, N.V., E-mail: nat@iph.krasn.ru [Kirensky Institute of Physics, 660036 Krasnoyarsk (Russian Federation); Platunov, M.S. [Kirensky Institute of Physics, 660036 Krasnoyarsk (Russian Federation); Ivanova, N.B. [Siberian Federal University, 660074 Krasnoyarsk (Russian Federation); Bezmaternykh, L.N. [Kirensky Institute of Physics, 660036 Krasnoyarsk (Russian Federation); Arauzo, A. [Servicio de Medidas Físicas, Universidad de Zaragoza, 50009 Zaragoza (Spain); Bartolomé, J. [Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza and Departamento de Física de la Materia Condensada, 50009 Zaragoza (Spain); Ovchinnikov, S.G. [Siberian Federal University, 660074 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 660036 Krasnoyarsk (Russian Federation); Siberian State Aerospace University, 660014 Krasnoyarsk (Russian Federation)

    2015-09-05

    Highlights: • The electrical resistance of the single crystalline warwickites has been measured. • The temperature-induced changes in the charge transfer mechanisms have been found. • The microscopic parameters of the electronic structure have been determined. • The studied warwickites have been classified as disordered correlated systems. • The Co substitution was found to lead to the weakening of the localization. - Abstract: The temperature dependence of the resistivity of single crystalline Mg{sub 1−x}Co{sub x}FeBO{sub 4} samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210–400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210–270 K) and by thermo-activation mechanism in the high-temperature range (T = 280–400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.

  8. Conditions for charge transport without recombination in low mobility organic solar cells and photodiodes (Presentation Recording)

    Science.gov (United States)

    Stolterfoht, Martin; Armin, Ardalan; Philippa, Bronson; White, Ronald D.; Burn, Paul L.; Meredith, Paul; Juška, Gytis; Pivrikas, Almantas

    2015-10-01

    Organic semiconductors typically possess low charge carrier mobilities and Langevin-type recombination dynamics, which both negatively impact the performance of organic solar cells and photodetectors. Charge transport in organic solar cells is usually characterized by the mobility-lifetime product. Using newly developed transient and steady state photocurrent measurement techniques we show that the onset of efficiency limiting photocarrier recombination is determined by the charge that can be stored on the electrodes of the device. It is shown that significant photocarrier recombination can be avoided when the total charge inside the device, defined by the trapped, doping-induced and mobile charge carriers, is less than the electrode charge. Based upon this physics we propose the mobility-recombination coefficient product as an alternative and more convenient figure of merit to minimize the recombination losses. We validate the results in 3 different organic semiconductor-based light harvesting systems with very different charge transport properties. The findings allow the determination of the charge collection efficiency in fully operational devices. In turn, knowing the conditions under which non-geminate recombination is eliminated enables one to quantify the generation efficiency of free charge carriers. The results are relevant to a wide range of light harvesting systems, particularly those based upon disordered semiconductors, and require a rethink of the critical parameters for charge transport.

  9. Mechanism of Charge Transfer from Plasmonic Nanostructures to Chemically Attached Materials.

    Science.gov (United States)

    Boerigter, Calvin; Aslam, Umar; Linic, Suljo

    2016-06-28

    Plasmonic metal nanoparticles can efficiently convert the energy of visible photons into the energy of hot charge carriers within the nanoparticles. These energetic charge carriers can transfer to molecules or semiconductors, chemically attached to the nanoparticles, where they can induce photochemical transformations. Classical models of photoinduced charge excitation and transfer in metals suggest that the majority of the energetic charge carriers rapidly decay within the metal nanostructure before they are transferred into the neighboring molecule or semiconductor, and therefore, the efficiency of charge transfer is low. Herein, we present experimental evidence that calls into question this conventional picture. We demonstrate a system where the presence of a molecule, adsorbed on the surface of a plasmonic nanoparticle, significantly changes the flow of charge within the excited plasmonic system. The nanoparticle-adsorbate system experiences high rates of direct, resonant flow of charge from the nanoparticle to the molecule, bypassing the conventional charge excitation and thermalization process taking place in the nanoparticle. This picture of charge transfer suggests that the yield of extracted hot electrons (or holes) from plasmonic nanoparticles can be significantly higher than the yields expected based on conventional models. We discuss a conceptual physical framework that allows us to explain our experimental observations. This analysis points us in a direction toward molecular control of the charge transfer process using interface and local field engineering strategies. PMID:27268233

  10. Inert carrier drying and coating process

    International Nuclear Information System (INIS)

    An inert carrier process is described for drying radioactive (particularly low level) waste material and for incorporating the dry material into a binder matrix from which the dried material will not be leached. Experimental details, and examples of the carrier and binder materials, are given. (U.K.)

  11. Providing resilience for carrier ethernet multicast traffic

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang; Manolova, Anna Vasileva; Rasmussen, Anders; Dittmann, Lars; Berger, Michael Stübert

    2009-01-01

    This paper presents an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we detail how multicast traffic, which is essential for e.g. IPTV can be protected. We present Carrier Ethernet resilience methods for linear and ring networks and show by simulation...

  12. Towards 100 gigabit carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2010-01-01

    OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  13. Providing resilience for carrier ethernet multicast traffic

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang;

    2009-01-01

    This paper presents an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we detail how multicast traffic, which is essential for e.g. IPTV can be protected. We present Carrier Ethernet resilience methods for linear and ring networks and show by simulation...... that the availability of a multicast connection can be significantly increased by applying relevant resilience techniques....

  14. Multistep Charge Method by Charge Arrays

    Science.gov (United States)

    Segami, Go; Kusawake, Hiroaki; Shimizu, Yasuhiro; Iwasa, Minoru; Kibe, Koichi

    2008-09-01

    We studied reduction of the size and weight of the Power Control Unit (PCU). In this study, we specifically examined the weight of the Battery Charge Regulator (BCR), which accounts for half of the PCU weight for a low earth orbit (LEO) satellite. We found a multistep charge method by charge arrays and adopted a similar method for GEO satellites, thereby enabling the BCR reduction. We found the possibility of reducing the size and weight of PCU through more detailed design than that for a conventional PCU.BCRC1R1batterySAPower Control UnitBCRC1R1batterySAPower UnitHowever, this method decreases the state of charge (SOC) of the battery. Battery tests, a battery simulator test, and numerical analysis were used to evaluate the SOC decrease. We also studied effects of this method on the battery lifetime. The multistep charge method by charge arrays enabled charging to the same level of SOC as the conventional constant current/ constant voltage (CC/CV) charge method for a LEO satellite.

  15. Interfacial Charge Transfer States in Condensed Phase Systems.

    Science.gov (United States)

    Vandewal, Koen

    2016-05-27

    Intermolecular charge transfer (CT) states at the interface between electron-donating (D) and electron-accepting (A) materials in organic thin films are characterized by absorption and emission bands within the optical gap of the interfacing materials. CT states efficiently generate charge carriers for some D-A combinations, and others show high fluorescence quantum efficiencies. These properties are exploited in organic solar cells, photodetectors, and light-emitting diodes. This review summarizes experimental and theoretical work on the electronic structure and interfacial energy landscape at condensed matter D-A interfaces. Recent findings on photogeneration and recombination of free charge carriers via CT states are discussed, and relations between CT state properties and optoelectronic device parameters are clarified. PMID:26980308

  16. Selection of Carrier Waveforms for PWM Inverter

    Institute of Scientific and Technical Information of China (English)

    陈国呈; 屈克庆; 许春雨; 孙承波

    2003-01-01

    In this paper the influence of different carrier waveforms upon the output characteristics of PWM inverter is described in detail. When a triangular carrier waveform is used in hard-switching PWM inverters, harmonics exist in the neighborhood of the output frequency of the inverter output voltage and current due to the dead time. The triangular carrier waveform used in soft-switching PWM inverter will cause difficulties in controlling resonance-trigger time, higher loss in the resonant circuit, and less utilization of the DC bus voltage. If a sawtooth carrier is used in hard-switching PWM inverter, there will be severe distortion in the current waveform. When sawtooth carriers with alternate positive and negative slopes are used in soft-switching PWM inverters, the resonancetrigger time is easy to control, and distortion in the output voltage and current caused by the dead time will not appear.

  17. Charged impurity-induced scatterings in chemical vapor deposited graphene

    Science.gov (United States)

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-01

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  18. Methanol as an energy carrier

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, P.; Grube, T.; Hoehlein, B. (eds.)

    2006-07-01

    For the future, a strongly growing energy demand is expected in the transport sector worldwide. Economically efficient oil production will run through a maximum in the next decade. Higher fuel prices and an environmentally desirable reduction of emissions will increase the pressure for reducing fuel consumption and emissions in road traffic. These criteria show the urgent necessity of structural changes in the fuel market. Due to its advantages concerning industrial-scale production, storage and global availability, methanol has the short- to medium-term potential for gaining increased significance as a substitution product in the energy market. Methanol can be produced both from fossil energy sources and from biomass or waste materials through the process steps of synthesis gas generation with subsequent methanol synthesis. Methanol has the potential to be used in an environmentally friendly manner in gasoline/methanol mixtures for flexible fuel vehicles with internal combustion engines and in diesel engines with pure methanol. Furthermore, it can be used in fuel cell vehicles with on-board hydrogen production in direct methanol fuel cell drives, and in stationary systems for electricity and heat generation as well as for hydrogen production. Finally, in portable applications it serves as an energy carrier for electric power generation. In this book, the processes for the production and use of methanol are presented and evaluated, markets and future options are discussed and issues of safety and environmental impacts are addressed by a team of well-known authors. (orig.)

  19. Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure

    Science.gov (United States)

    Dimmock, James A. R.; Kauer, Matthias; Smith, Katherine; Liu, Huiyun; Stavrinou, Paul N.; Ekins-Daukes, Nicholas J.

    2016-07-01

    A hot carrier photovoltaic cell requires extraction of electrons on a timescale faster than they can lose energy to the lattice. We optically and optoelectronically characterize two resonant tunneling structures, showing their compatability with hot carrier photovoltaic operation, demonstrating structural and carrier extraction properties necessary for such a device. In particular we use time resolved and temperature dependent photoluminescence to determine extraction timescales and energy levels in the structures and demonstrate fast carrier extraction by tunneling. We also show that such devices are capable of extracting photo-generated electrons at high carrier densities, with an open circuit voltage in excess of 1 V.

  20. Effects of carrier-carrier scattering on population inversion in graphene under pulse photoexcitation

    Science.gov (United States)

    Satou, Akira; Ryzhii, Victor; Otsuji, Taiichi

    2015-01-01

    We study the carrier relaxation dynamics in intrinsic graphene after pulse photoexcitation and reveal effects of intraband carrier-carrier scattering on population inversion in the terahertz region, by conducting simulation based on the quasi-classical Boltzmann equation. It is demonstrated that by changing the dielectric constant of the surrounding materials the rate of carrier-carrier scattering can be controlled and the relaxation dynamics differs for cases with low and high dielectric constants. It is also found that the Pauli blocking of photogeneration in case of the pulse photoexcitation causes decrease in the photocarrier concentration and thus weakening of population inversion with higher dielectric constant.

  1. Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile; Efficacite de la collection de charges des transistors AsGa a effet de champ fabriques sur une couche enterree realisee a basse temperature: influence sur le profil de depot de charges

    Energy Technology Data Exchange (ETDEWEB)

    McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S. [Naval Research Laboratory, Washington DC (United States)

    1999-07-01

    The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

  2. On Dust Charging Equation

    OpenAIRE

    Tsintsadze, Nodar L.; Tsintsadze, Levan N.

    2008-01-01

    A general derivation of the charging equation of a dust grain is presented, and indicated where and when it can be used. A problem of linear fluctuations of charges on the surface of the dust grain is discussed.

  3. Systematic study of free monopolar discharge in dielectrics with charge excess

    International Nuclear Information System (INIS)

    The monopolar space charge motion in dielectrics is studied in the aim of providing general information about it to the experimentalist. The electric current is obtained for many initial charge distributions and some relations are derived linking the behavior of the current to the initial charge distribution. Methods are proposed for obtaining the mobility of the carriers from experimental results. Finally the conditions for observation of current reversals are analysed. (Author)

  4. Induced Charge Capacitive Deionization

    OpenAIRE

    Rubin, S.; Suss, M. E.; Biesheuvel, P. M.; Bercovici, M.

    2016-01-01

    We demonstrate the phenomenon of induced-charge capacitive deionization (ICCDI) that occurs around a porous and conducting particle immersed in an electrolyte, under the action of an external electrostatic field. The external electric field induces an electric dipole in the porous particle, leading to capacitive charging of its volume by both cations and anions at opposite poles. This regime is characterized both by a large RC charging time and a small electrochemical charge relaxation time, ...

  5. Primitive Virtual Negative Charge

    OpenAIRE

    Kim, Kiyoung

    2008-01-01

    Physical fields, such as gravity and electromagnetic field, are interpreted as results from rearrangement of vacuum particles to get the equilibrium of net charge density and net mass density in 4-dimensional complex space. Then, both fields should interact to each other in that physical interaction is considered as a field-to-field interaction. Hence, Mass-Charge interaction is introduced with primitive-virtual negative charge defined for the mass. With the concept of Mass-Charge interaction...

  6. Spin dynamics and charge order-disorder phase transition detected by EPR in α'-(BEDT-TTF)2IBr2

    OpenAIRE

    Dmitriev, A.; Chernenkaya, A.

    2010-01-01

    Stepwise changes in electron paramagnetic resonance (EPR) parameters (integral intensity, linewidth) accompanying localization of charge carriers have been found in the α'-(BEDT-TTF)2IBr2 crystals. In single crystal exchange narrowing of the EPR lines and sharp decrease in static and dynamic magnetic susceptibility caused by antiferromagnetic interaction of localized charge carriers is observed at Т Т > 50 K a difference between static and dynamic magnetic susceptibility is observed in the...

  7. Charge exchange system

    Science.gov (United States)

    Anderson, Oscar A.

    1978-01-01

    An improved charge exchange system for substantially reducing pumping requirements of excess gas in a controlled thermonuclear reactor high energy neutral beam injector. The charge exchange system utilizes a jet-type blanket which acts simultaneously as the charge exchange medium and as a shield for reflecting excess gas.

  8. Tuning Many-Body Interactions in Graphene: The Effects of Doping on Excitons and Carrier Lifetimes

    Science.gov (United States)

    Mak, Kin Fai; da Jornada, Felipe H.; He, Keliang; Deslippe, Jack; Petrone, Nicholas; Hone, James; Shan, Jie; Louie, Steven G.; Heinz, Tony F.

    2014-05-01

    The optical properties of graphene are strongly affected by electron-electron (e-e) and electron-hole (e-h) interactions. Here we tune these many-body interactions through varying the density of free charge carriers. Measurements from the infrared to the ultraviolet reveal significant changes in the optical conductivity of graphene for both electron and hole doping. The shift, broadening, and modification in shape of the saddle-point exciton resonance reflect strong screening of the many-body interactions by the carriers, as well as changes in quasiparticle lifetimes. Ab initio calculations by the GW Bethe-Salpeter equation method, which take into account the modification of both the repulsive e-e and the attractive e-h interactions, provide excellent agreement with experiment. Understanding the optical properties and high-energy carrier dynamics of graphene over a wide range of doping is crucial for both fundamental graphene physics and for emerging applications of graphene in photonics.

  9. 49 CFR 369.2 - Classification of carriers-motor carriers of property, household goods carriers, and dual...

    Science.gov (United States)

    2010-10-01

    ... operating revenues after applying the revenue deflator formula shown in Note A. (3) When a business combination occurs such as a merger, reorganization, or consolidation, the surviving carrier shall...

  10. The influence of negative charged centers on the hole transport in a typical molecularly doped polymer

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Charged centers are introduced into a biased sample using an electron gun. • Two-layer multiple trapping model is used to describe charge carrier transport. • Model parameters are extracted from experimental data. • Current transients rise in the preflight region due to induced space charge. • Proposed model explains the observed effects semiquantitatively. - Abstract: We have studied effects of the negative charged centers on the time of flight (TOF) curves measured in a typical hole-conducting molecularly doped polymer. The main effects are the unusual TOF (surface generation) current rise in the preflight region (be it a flat plateau or a cusp) due to the accumulated space charge and the current reduction at all times because of the monomolecular recombination. TOF-2 (bulk generation) transients are less sensitive to charged centers. Analysis of these effects has proved that charged centers do not change the carrier mobility provided that the space charge field and bimolecular recombination are properly accounted for in terms of the proposed two-layer MT model. We have shown that combination of TOF, TOF-1a and TOF-2 variants of the electron-gun based technique allows one to establish definitively the character of the charge carrier transport in MDPs

  11. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao; Fu, Rong; Ruepp, Sarah Renée; Wessing, Henrik; Berger, Michael Stübert

    2009-01-01

    technology, making the use of Ethernet as a convergence layer for Next Generation Networks a distinct possibility. Triple Play services, in particular IPTV, are expected to be a main drivers for carrier Ethernet, however, a number of challenges must be addressed including QoS enabled control plane, enhanced...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  12. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2009-01-01

    Ethernet as a transport technology has, up to now, lacked the features such as network layer architecture, customer separation and manageability that carriers require for wide-scale deployment. However, with the advent of PBB-TE and T-MPLS, it is now possible to use Ethernet as a transport...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  13. ISRAEL’S NATIONAL WATER CARRIER

    OpenAIRE

    Nathan Cohen

    2008-01-01

    The National Water Carrier of Israel (Ha Movil Ha' Artzi). It is the main water project of Israel and its main task is to transfer water from the rainy north to the center and to the arid south. The National Water Carrier connects the Sea of Galilee with Israel's water system. The original goal was to provide irrigation water to Negev. Today 80% of the water is utilized for Israel's domestic consumption. Most of the water works in Israel are combined with the National Water Carrier for about...

  14. Carrier scattering in metals and semiconductors

    CERN Document Server

    Gantmakher, VF

    1987-01-01

    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

  15. Space Charge Effects

    CERN Document Server

    Ferrario, M; Palumbo, L

    2014-01-01

    The space charge forces are those generated directly by the charge distribution, with the inclusion of the image charges and currents due to the interaction of the beam with a perfectly conducting smooth pipe. Space charge forces are responsible for several unwanted phenomena related to beam dynamics, such as energy loss, shift of the synchronous phase and frequency , shift of the betatron frequencies, and instabilities. We will discuss in this lecture the main feature of space charge effects in high-energy storage rings as well as in low-energy linacs and transport lines.

  16. Excess carrier lifetimes in Ge layers on Si

    Energy Technology Data Exchange (ETDEWEB)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  17. Carrier injection dynamics in heterojunction solar cells with bipolar molecule

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Yosuke; Yonezawa, Kouhei [Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8571 (Japan); Yasuda, Takeshi, E-mail: YASUDA.Takeshi@nims.go.jp, E-mail: moritomo.yutaka.gf@u.tsukuba.ac.jp [Photovoltaic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Moritomo, Yutaka, E-mail: YASUDA.Takeshi@nims.go.jp, E-mail: moritomo.yutaka.gf@u.tsukuba.ac.jp [Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8571 (Japan); Center for Integrated Research in Fundamental Science and Engineering (CiRfSE), University of Tsukuba, Tsukuba 305-8571 (Japan)

    2015-03-23

    A boron subphthalocyanine chloride (SubPc) is a bipolar molecule and is used in hetero-junction organic solar cells. Here, we investigated the carrier injection dynamics from the donor α-sexithiophene (6T) or acceptor C{sub 60} layers to the bipolar SubPc layer by means of the femtosecond time-resolved spectroscopy. We observed gradual increase of the SubPc{sup –} (SubPc{sup +}) species within ≈300 ps. The increases are interpreted in terms of the exciton diffusion within the 6T (C{sub 60}) layer and subsequent electron (hole) injection at the interface. In 6T/SubPc heterojunction, the electron injection is observed even at 80 K. The robust electron injection is ascribed to the efficient charge separation within the 6T layer under photo exciation at 400 nm.

  18. Carrier injection dynamics in heterojunction solar cells with bipolar molecule

    International Nuclear Information System (INIS)

    A boron subphthalocyanine chloride (SubPc) is a bipolar molecule and is used in hetero-junction organic solar cells. Here, we investigated the carrier injection dynamics from the donor α-sexithiophene (6T) or acceptor C60 layers to the bipolar SubPc layer by means of the femtosecond time-resolved spectroscopy. We observed gradual increase of the SubPc– (SubPc+) species within ≈300 ps. The increases are interpreted in terms of the exciton diffusion within the 6T (C60) layer and subsequent electron (hole) injection at the interface. In 6T/SubPc heterojunction, the electron injection is observed even at 80 K. The robust electron injection is ascribed to the efficient charge separation within the 6T layer under photo exciation at 400 nm

  19. Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Kim, Yong Jin; Jang, Ho-Kyun; Jin, Jun Eon; Shin, Minju; Kim, Young Keun; Kim, Gyu-Tae

    2015-12-01

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  20. Free Carrier Generation in Fullerene Acceptors and Its Effect on Polymer Photovoltaics

    KAUST Repository

    Burkhard, George F.

    2012-12-20

    Early research on C60 led to the discovery that the absorption of photons with energy greater than 2.35 eV by bulk C60 produces free charge carriers at room temperature. We find that not only is this also true for many of the soluble fullerene derivatives commonly used in organic photovoltaics, but also that the presence of these free carriers has significant implications for the modeling, characterization, and performance of devices made with these materials. We demonstrate that the discrepancy between absorption and quantum efficiency spectra in P3HT:PCBM is due to recombination of such free carriers in large PCBM domains before they can be separated at a donor/acceptor interface. Since most theories assume that all free charges result from the separation of excitons at a donor/acceptor interface, the presence of free carrier generation in fullerenes can have a significant impact on the interpretation of data generated by numerous field-dependent techniques. © 2012 American Chemical Society.

  1. Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, R.; Steinmann, V.; Mangan, N. M.; Brandt, R. E.; Poindexter, J. R.; Jaramillo, R.; Mailoa, J. P.; Hartman, K.; Polizzotti, A.; Buonassisi, T. [Massachusetts Institute of Technology, Cambridge, Cambridge, Massachusetts 02139 (United States); Yang, C.; Gordon, R. G. [Harvard University, Cambridge, Massachusetts 02138 (United States)

    2015-05-18

    We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.

  2. The nature of free-carrier transport in organometal halide perovskites

    Science.gov (United States)

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells. PMID:26781627

  3. The nature of free-carrier transport in organometal halide perovskites

    Science.gov (United States)

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.

  4. Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

    2015-12-14

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  5. Charge density glass from fictions to facts

    International Nuclear Information System (INIS)

    Thirty years ago Fukuyama [J. Phys. Soc. Jpn. 45 (1978) 1474] predicted a transition from charge density wave (CDW) state to the charge density glass (CDG) at a finite temperature as the consequence of the competition between the uniform commensurability pinning and the random impurity pinning. We present strong evidence that the CDG phase indeed exists as a generic feature of density wave systems. However, it arises from the competition of the random impurity pinning and the electrostatic intra-CDW interaction which tends to establish a uniform phase at low temperature. The glass transition occurs at the temperature at which the free carriers cannot efficiently screen the phase distortions. The characteristic length scale of the disorder, i.e. the size of the phase coherent domains, governs the glass properties

  6. Photogeneration of charges in microcrystalline chlorophyll a

    International Nuclear Information System (INIS)

    The electric-field and temperature dependence of hole photogeneration in chlorophyll a (Chla) have been analyzed in terms of electric-field assisted thermal dissociation of charge pairs based on Onsager theory. An excellent agreement between the experimental and theoretical values of the slope-to-intercept ratio, S/I, for the plot of photogeneration efficiency vs. electric field at low field strengths provides a proof for the applicability of the Onsager approach to the photogeneration of charges in Chla. A value of 19 nm has been obtained for Coulomb capture radius, rc, from S/I. From the temperature dependence of photogeneration, the initial separation, r0, of photogenerated electron-hole has been evaluated, and has a value of 1.24 nm. This smaller r0 compared to rc leads to a feeble dissociation probability of electron-hole pairs into free carriers, and may, among other factors, explain the low power conversion efficiencies of Chla photovoltaic cells.

  7. On the Nature of the Electric Charge

    CERN Document Server

    Krasnoholovets, V

    2003-01-01

    The geometry of the elementary charge is studied in the framework of the concept of space considered as a tessellation lattice ('tessellattice'), which has recently been developed by M. Bounias and the author. The descriptive-geometric sense of the electric and magnetic fields and their carriers - photons - is analyzed. The notion of the scalar and vector potentials of a charged particle and their behavior at the motion of the particle along a path is investigated in detail. Based on the potentials, the Lagrangian leading to the Maxwell equations is constructed. The distinctive properties of the inerton and the photon - two basic elementary excitations, or quasi-particles of the space tessellattice - are discussed. Summarizing, we may say that the work suggests the detailed interpretation of the Maxwell equations in terms of the submicroscopic approach to Nature.

  8. Band gap tunning in BN-doped graphene systems with high carrier mobility

    International Nuclear Information System (INIS)

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers

  9. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  10. The Optical Signature of Charges in Conjugated Polymers.

    Science.gov (United States)

    Heimel, Georg

    2016-05-25

    Electrical charge flowing through organic semiconductors drives many of today's mobile phone displays and television screens, suggesting an internally consistent model of charge-carrier properties in these materials to have manifested. In conjugated polymers, charges give rise to additional absorption of light at wavelengths longer than those absorbed by the electrically neutral species. These characteristic absorption bands are universally being related to the emergence of localized energy levels shifted into the forbidden gap of organic semiconductors due to local relaxation of the molecular geometry. However, the traditional view on these energy levels and their occupation is incompatible with expected changes in electron removal and addition energies upon charging molecules. Here, I demonstrate that local Coulomb repulsion, as captured by nonempirically optimized electronic-structure calculations, restores compatibility and suggests a different origin of the charge-induced optical transitions. These results challenge a widely accepted and long-established picture, but an improved understanding of charge carriers in molecular materials promises a more targeted development of organic and hybrid organic/inorganic (opto-)electronic devices. PMID:27280165

  11. The Kinetics of Carrier Transport Inhibition

    DEFF Research Database (Denmark)

    Rosenberg, T.; Wilbrandt, Robert Walter

    1962-01-01

    The kinetical treatment of enzymatic carrier transports as given in previous communications has been extended to conditions of inhibition. Various possible types of inhibitors have been considered differing in the site of attack (enzyme or carrier), in the mode of action (competing with the...... substrate for the enzyme or the carrier or for both, competing with the carrier for the enzyme, or non-competitive) and in the ability of penetrating the membrane. Experiments are reported on the inhibition of glucose and fructose transport across the human red cell membrane by phlorizine, phloretine and......, with the result that a certain asymmetry of inhibition (stronger inhibition of exit than of entrance) is to be expected. This asymmetry was termed “first order asymmetry”. In experiments with each of the three inhibitors an asymmetry of inhibition in the expected direction was observed which however...

  12. Physician Fee Schedule Carrier Specific Files

    Data.gov (United States)

    U.S. Department of Health & Human Services — The Centers for Medicare and Medicaid Services (CMS) has condensed all 56 Physician Fee Schedule (PFS) carrier specific pricing files into one zip file. It is...

  13. Intraoral radiation carrier for edentulous patients

    International Nuclear Information System (INIS)

    The principles of fabricating an intraoral radioactive carrier have been described to treat malignant diseases of the oral cavity. The prosthesis provides consistent direction and fixation of the radioactive source into the same location

  14. Intraoral radiation carrier for edentulous patients

    Energy Technology Data Exchange (ETDEWEB)

    Sela, M.; Taicher, S.

    1983-12-01

    The principles of fabricating an intraoral radioactive carrier have been described to treat malignant diseases of the oral cavity. The prosthesis provides consistent direction and fixation of the radioactive source into the same location.

  15. Protection switching for carrier ethernet multicast

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Berger, Michael Stübert

    2010-01-01

    This paper addresses network survivability for IPTV multicast transport in Carrier Ethernet networks. The impact of link failures is investigated and suggestions for intelligent multicast resilience schemes are proposed. In particular, functions of the multicast tree are integrated with the Carrier...... recovery path length, recovery time, number of branch nodes and operational complexity. The integrated approach therefore shows significant potential to increase the QoE for IPTV users in case of network failures and recovery actions....

  16. Airport Congestion When Carriers Have Market Power

    OpenAIRE

    Brueckner, Jan K.

    2002-01-01

    This paper analyzes airport congestion when carriers are nonatomistic, showing how the results of the road-pricing literature are modified when the economic agents causing congestion have market power. The analysis shows that when an airport is dominated by a monopolist, congestion is fully internalized, yielding no role for congestion pricing under monopoly conditions. Under a Cournot oligopoly, however, carriers are shown to internalize only the congestion they impose on themselves. A toll ...

  17. Evaluating multicast resilience in carrier ethernet

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang;

    2010-01-01

    This paper gives an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we show how multicast traffic, which is essential for IPTV can be protected. We detail the ackground for resilience mechanisms and their control and e present Carrier Ethernet...... resilience methods for linear nd ring networks. By simulation we show that the vailability of a multicast connection can be significantly increased by applying protection methods....

  18. Preparation and application of magnetic microsphere carriers

    Institute of Scientific and Technical Information of China (English)

    ZHANG Bo; XING Jianmin; LIU Huizhou

    2007-01-01

    Magnetic microsphere carriers have received considerable attention,primarily because of their wide applications in the fields of biomedicine and bioengineering.In this paper,preparation methods,surface modification and application of magnetic carriers are reviewed.Emphasis will be placed on recent biological and biomedical developments and trends such as enzyme immobilization,cell isolation,protein purification,target drugs and DNA separation.

  19. Hot carrier solar cell absorbers: investigation of carrier cooling properties of candidate materials

    Science.gov (United States)

    Conibeer, G.; Shrestha, Santosh; Huang, Shujuan; Patterson, Robert; Xia, Hongze; Feng, Yu; Zhang, Pengfei; Gupta, Neeti; Smyth, Suntrana; Liao, Yuanxun; Lin, Shu; Wang, Pei; Dai, Xi; Chung, Simon; Yang, Jianfeng; Zhang, Yi

    2015-09-01

    The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.

  20. Radio Science Measurements with Suppressed Carrier

    Science.gov (United States)

    Asmar, Sami; Divsalar, Dariush; Oudrhiri, Kamal

    2013-01-01

    Radio Science started when it became apparent with early Solar missions that occultations by planetary atmospheres would affect the quality of radio communications. Since then the atmospheric properties and other aspects of planetary science, solar science, and fundamental physics were studied by scientists. Radio Science data was always extracted from a received pure residual carrier (without data modulation). For some missions, it is very desirable to obtain Radio Science data from a suppressed carrier modulation. In this paper we propose a method to extract Radio Science data when a coded suppressed carrier modulation is used in deep space communications. Type of modulation can be BPSK, QPSK, OQPSK, MPSK or even GMSK. However we concentrate mostly on BPSK modulation. The proposed method for suppressed carrier simply tries to wipe out data that acts as an interference for Radio Science measurements. In order to measure the estimation errors in amplitude and phase of the Radio Science data we use Cramer-Rao bound (CRB). The CRB for the suppressed carrier modulation with non-ideal data wiping is then compared with residual carrier modulation under the same noise condition. The method of derivation of CRB for non-ideal data wiping is an innovative method that presented here. Some numerical results are provided for coded system.

  1. Heavily Doped, Charge-Balanced Fluorescent Organic Light-Emitting Diodes from Direct Charge Trapping of Dopants in Emission Layer.

    Science.gov (United States)

    Rhee, Sang Ho; Kim, Sung Hyun; Kim, Hwang Sik; Shin, Jun Young; Bastola, Jeeban; Ryu, Seung Yoon

    2015-08-01

    We studied the effect of direct charge trapping at different doping concentrations on the device performance in tris(8-hydroxyquinoline) aluminum (Alq3):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) as a host-dopant system of a fluorescent organic light-emitting diode. With increasing C545T doping concentration, trap sites could lead to the promotion of hole injection and the suppression of electron injection due to the electron-transport character of Alq3 host for each carriers, as confirmed by hole- and electron-only devices. Direct charge injection of hole carriers from the hole transport layer into C545T dopants and the charge trapping of electron carriers are the dominant processes to improve the charge balance and the corresponding efficiency. The shift of the electroluminescence (EL) spectra from 519 nm to 530 nm was confirmed the exciton formation route from Förster energy transfer of host-dopant system to direct charge trapping of dopant-only emitting systems. Variation in the doping concentration dictates the role of the dopant in the fluorescent host-dopant system. Even though concentration quenching in fluorescent dopants is unavoidable, relatively heavy doping is necessary to improve the charge balance and efficiency and to investigate the relationship between direct charge trapping and device performance. Heavy doping at a doping ratio of 6% also generates heavy exciton quenching and excimer exciton, because of the excitons being close enough and dipole-dipole interactions. The optimum device performance was achieved with a 4%-doped device, retaining the high efficiency of 12.5 cd/A from 100 cd/m(2) up to 15,000 cd/m(2). PMID:26151550

  2. Photoinduced Dedoping of Conducting Polymers: An Approach to Precise Control of the Carrier Concentration and Understanding Transport Properties.

    Science.gov (United States)

    Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

    2016-01-27

    Exploring the various applications of conjugated polymers requires systematic studies of their physical properties as a function of the doping density, which, consequently, calls for precise control of their doping density. In this study, we report a novel solid-state photoinduced charge-transfer reaction that dedopes highly conductive polyelectrolyte complexes such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate). Varying the UV-irradiation time of this material allows the carrier density inside the film to be precisely controlled over more than 3 orders of magnitude. We extract the carrier density, carrier mobility, and Seebeck coefficient at different doping levels to obtain a clear image of carrier-transport mechanisms. This approach not only leads to a better understanding of the physical properties of the conducting polymer but also is useful for developing applications requiring patterned, large-area conducting polymers. PMID:26734776

  3. Effects of Disorder on Carrier Transport in Cu2 SnS3

    Science.gov (United States)

    Baranowski, Lauryn L.; McLaughlin, Kevin; Zawadzki, Pawel; Lany, Stephan; Norman, Andrew; Hempel, Hannes; Eichberger, Rainer; Unold, Thomas; Toberer, Eric S.; Zakutayev, Andriy

    2015-10-01

    Cu2SnS3 is a promising absorber material that has attracted significant interest in recent years. However, similar to Cu2 ZnSn (S ,Se )4 (CZTS), Cu2 SnS3 displays cation disorder, which complicates the scientific understanding and technological applications of these materials. In this work, we use postdeposition annealing to convert disordered Cu2 SnS3 thin films to the ordered structure. After annealing, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport is investigated by using optical-pump terahertz-probe spectroscopy, minimal differences are observed in the lifetimes of the photoexcited charge carriers in the ordered and disordered Cu2 SnS3 . By combining the experimental data with theoretical results from first-principles calculations and Monte Carlo simulations, we are able to conclude that even ostensibly "ordered" Cu2 SnS3 displays minority carrier transport properties corresponding to the disordered structure. Transmission electron microscopy investigations reveal only a very low density of planar defects (stacking faults and/or twins) in the annealed film, suggesting that these imperfections can dominate minority carrier transport even at low levels. The results of this study highlight some of the challenges in the development of Cu2 SnS3 -based photovoltaics and have implications for other disordered multinary semiconductors such as CZTS.

  4. On the Nature of High Field Charge Transport in Reinforced Silicone Dielectrics: Experiment and Simulation

    CERN Document Server

    Huang, Yanhui

    2016-01-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were compared with properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial to determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails, and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  5. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Science.gov (United States)

    Huang, Yanhui; Schadler, Linda S.

    2016-08-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  6. Charge regulation at semiconductor-electrolyte interfaces.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2015-07-01

    The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. PMID:25595623

  7. Entanglement of conjugated polymer chains influences molecular self-assembly and carrier transport

    KAUST Repository

    Zhao, Kui

    2013-06-26

    The influence of polymer entanglement on the self-assembly, molecular packing structure, and microstructure of low-Mw (lightly entangled) and high-Mw (highly entangled) poly (3-hexylthiophene) (P3HT), and the carrier transport in thin-film transistors, are investigated. The polymer chains are gradually disentangled in a marginal solvent via ultrasonication of the polymer solution, and demonstrate improved diffusivity of precursor species (coils, aggregates, and microcrystallites), enhanced nucleation and crystallization of P3HT in solution, and self-assembly of well-ordered and highly textured fibrils at the solid-liquid interface. In low-Mw P3HT, reducing chain entanglement enhances interchain and intrachain ordering, but reduces the interconnectivity of ordered domains (tie molecules) due to the presence of short chains, thus deteriorating carrier transport even in the face of improving crystallinity. Reducing chain entanglement in high-Mw P3HT solutions increases carrier mobility up to ≈20-fold, by enhancing interchain and intrachain ordering while maintaining a sufficiently large number of tie molecules between ordered domains. These results indicate that charge carrier mobility is strongly governed by the balancing of intrachain and interchain ordering, on the one hand, and interconnectivity of ordered domains, on the other hand. In high-Mw P3HT, intrachain and interchain ordering appear to be the key bottlenecks to charge transport, whereas in low-Mw P3HT, the limited interconnectivity of the ordered domains acts as the primary bottleneck to charge transport. Conjugated polymer chains of poly(3-hexylthiophene) (P3HT) are gradually disentangled in solution and trends in carrier transport mechanisms in organic thin film transistors for low- and high-molecular weight P3HT are investigated. While intrachain and interchain ordering within ordered domains are the key bottlenecks to charge transport in high-Mw P3HT films, the limited interconnectivity of ordered

  8. Modelling airport congestion charges

    OpenAIRE

    Janić, Milan

    2012-01-01

    This article deals with modelling congestion charges at an airport. In this context, congestion charging represents internalizing the cost of marginal delays that a flight imposes on other flights due to congestion. The modelling includes estimating congestion and flight delays, the cost of these delays and the efficiency of particular flights following the introduction ofa congestion charge. The models are applied to an airport / New York LaGuardia / to illustrate their ability to handle mor...

  9. Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus.

    Science.gov (United States)

    Espinosa-Gongora, Carmen; Larsen, Niels; Schønning, Kristian; Fredholm, Merete; Guardabassi, Luca

    2016-01-01

    Staphylococcus aureus is presently regarded as an emerging zoonotic agent due to the spread of specific methicillin-resistant S. aureus (MRSA) clones in pig farms. Studying the microbiota can be useful for the identification of bacteria that antagonize such opportunistic veterinary and zoonotic pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium system. Carriers and non-carriers were selected on the basis of quantitative longitudinal data on S. aureus carriage in 600 pigs sampled at 20 Danish herds included in two previous studies in Denmark. Raw sequences were analysed with the BION meta package and the resulting abundance matrix was analysed using the DESeq2 package in R to identify operational taxonomic units (OTUs) with differential abundance between S. aureus carriers and non-carriers. Twenty OTUs were significantly associated to non-carriers, including species with known probiotic potential and antimicrobial effect such as lactic acid-producing isolates described among Leuconostoc spp. and some members of the Lachnospiraceae family, which is known for butyrate production. Further 5 OTUs were significantly associated to carriage, including known pathogenic bacteria such as Pasteurella multocida and Klebsiella spp. Our results show that the nasal microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate these bacteria and assess their possible antagonistic effect on S. aureus for the pursuit of new strategies to control MRSA in pig farming. PMID:27509169

  10. Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus

    Science.gov (United States)

    Espinosa-Gongora, Carmen; Larsen, Niels; Schønning, Kristian; Fredholm, Merete; Guardabassi, Luca

    2016-01-01

    Staphylococcus aureus is presently regarded as an emerging zoonotic agent due to the spread of specific methicillin-resistant S. aureus (MRSA) clones in pig farms. Studying the microbiota can be useful for the identification of bacteria that antagonize such opportunistic veterinary and zoonotic pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium system. Carriers and non-carriers were selected on the basis of quantitative longitudinal data on S. aureus carriage in 600 pigs sampled at 20 Danish herds included in two previous studies in Denmark. Raw sequences were analysed with the BION meta package and the resulting abundance matrix was analysed using the DESeq2 package in R to identify operational taxonomic units (OTUs) with differential abundance between S. aureus carriers and non-carriers. Twenty OTUs were significantly associated to non-carriers, including species with known probiotic potential and antimicrobial effect such as lactic acid-producing isolates described among Leuconostoc spp. and some members of the Lachnospiraceae family, which is known for butyrate production. Further 5 OTUs were significantly associated to carriage, including known pathogenic bacteria such as Pasteurella multocida and Klebsiella spp. Our results show that the nasal microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate these bacteria and assess their possible antagonistic effect on S. aureus for the pursuit of new strategies to control MRSA in pig farming. PMID:27509169

  11. Influence of tellurium content and chlorine concentration on carrier drift mobility of Se100-xTex:Cl glasses

    International Nuclear Information System (INIS)

    Carrier drift mobility in undoped and doped with chlorine Se100-xTex (0≤x≤10) glassy alloys has been investigated as a function of Te content and Cl concentration. It was found that the drift mobilities of both electrons and holes were decreased with Te content increasing. The dependence of the carriers drift mobilities on Cl concentration followed a complicated behavior and was resulted in rapid decrease of the hole mobility when chlorine concentration approached 0.1 at.%. The concentrations and energies of localized states controlling the charge transport in the material have been found depending on Te content and Cl concentration. The observed charge-transport features are considered to attribute to changes in the concentrations of intrinsic charged defects and explained in terms of VAP model. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Charge transport in dual-gate organic field-effect transistors

    OpenAIRE

    Brondijk, J. J.; Spijkman, M.; Torricelli, F Fabrizio; Blom, PWM Paul; Leeuw, van der, R.

    2012-01-01

    The charge carrier distribution in dual-gate field-effect transistors is investigated as a function of semiconductor thickness. A good agreement with 2-dimensional numerically calculated transfer curves is obtained. For semiconductor thicknesses larger than the accumulation width, two spatially separated channels are formed. The cross-over from accumulation into depletion of the two channels in combination with a carrier density dependent mobility causes a shoulder in the transfer characteris...

  13. Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer

    OpenAIRE

    Lv, H. Y.; Lu, W. J.; Shao, D. F.; Liu, Y; Tan, S. G.; Y. P. Sun

    2014-01-01

    The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreo...

  14. Simulations of charge transport in organic light emitting diodes

    CERN Document Server

    Martin, S J

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for th...

  15. Initial recombination in the track of heavy charged particles: Numerical solution for air filled ionization chambers

    DEFF Research Database (Denmark)

    Kaiser, Franz-Joachim; Bassler, Niels; Tölli, Heikki;

    2012-01-01

    this study the effect of the underlying dose distribution on columnar recombination, a quantitative model for initial recombination,is investigated. Material and Methods Jaffe’s theory, formulated in 1913 quantifies initial recombination by elemental processes, providing an analytical (closed) solution...... 3D). The investigated charge carrier distributions are based on track structure models, which follow a 1/r2 behavior at larger radii and show a constant value at small radii. The results of the calculations are compared to the initial formulation and to data obtained in experiments using carbon ion....... Here, we investigate the effect of the underlying charged carrier distribution around a carbon ion track. The fundamental partial differential equation, formulated by Jaffe, is solved numerically taking into account more realistic charge carrier distributions by the use of a computer program (Gascoigne...

  16. Spin properties of charged Mn-doped quantum dota)

    Science.gov (United States)

    Besombes, L.; Léger, Y.; Maingault, L.; Mariette, H.

    2007-04-01

    The optical properties of individual quantum dots doped with a single Mn atom and charged with a single carrier are analyzed. The emission of the neutral, negatively and positively charged excitons coupled with a single magnetic atom (Mn) are observed in the same individual quantum dot. The spectrum of the charged excitons in interaction with the Mn atom shows a rich pattern attributed to a strong anisotropy of the hole-Mn exchange interaction slightly perturbed by a small valence-band mixing. The anisotropy in the exchange interaction between a single magnetic atom and a single hole is revealed by comparing the emission of a charged Mn-doped quantum dot in longitudinal and transverse magnetic field.

  17. Efficient charge generation by relaxed charge-transfer states at organic interfaces

    KAUST Repository

    Vandewal, Koen

    2013-11-17

    Interfaces between organic electron-donating (D) and electron-accepting (A) materials have the ability to generate charge carriers on illumination. Efficient organic solar cells require a high yield for this process, combined with a minimum of energy losses. Here, we investigate the role of the lowest energy emissive interfacial charge-transfer state (CT1) in the charge generation process. We measure the quantum yield and the electric field dependence of charge generation on excitation of the charge-transfer (CT) state manifold via weakly allowed, low-energy optical transitions. For a wide range of photovoltaic devices based on polymer:fullerene, small-molecule:C60 and polymer:polymer blends, our study reveals that the internal quantum efficiency (IQE) is essentially independent of whether or not D, A or CT states with an energy higher than that of CT1 are excited. The best materials systems show an IQE higher than 90% without the need for excess electronic or vibrational energy. © 2014 Macmillan Publishers Limited.

  18. 49 CFR 1139.22 - Revenue data for study carriers.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 8 2010-10-01 2010-10-01 false Revenue data for study carriers. 1139.22 Section... BOARD, DEPARTMENT OF TRANSPORTATION RULES OF PRACTICE PROCEDURES IN MOTOR CARRIER REVENUE PROCEEDINGS Intercity Bus Industry § 1139.22 Revenue data for study carriers. The study carriers, as identified...

  19. 76 FR 32390 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2011-06-06

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory... MCSAC will complete action on Task 11-01, regarding Patterns of Safety Violations by Motor...

  20. 75 FR 2923 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-01-19

    ... sessions announced on January 5, 2010 (75 FR 285), and elsewhere in today's Federal Register, and to... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety...