WorldWideScience

Sample records for chalcogenides

  1. Chalcogenide Fibre Displacement Sensor

    Science.gov (United States)

    2001-06-01

    Fibre optic technology offers the possibility for developing of a variety of physical sensors for a wide range of physical parameters. The main...integrating sphere. The use of chalcogenide rather quartz fibre optic highly increases the Sensitivity of the sensor. Experimental set-up, transmission characteristics and technical parameters are presented.

  2. Chalcogenide perovskites for photovoltaics.

    Science.gov (United States)

    Sun, Yi-Yang; Agiorgousis, Michael L; Zhang, Peihong; Zhang, Shengbai

    2015-01-14

    Chalcogenide perovskites are proposed for photovoltaic applications. The predicted band gaps of CaTiS3, BaZrS3, CaZrSe3, and CaHfSe3 with the distorted perovskite structure are within the optimal range for making single-junction solar cells. The predicted optical absorption properties of these materials are superior compared with other high-efficiency solar-cell materials. Possible replacement of the alkaline-earth cations by molecular cations, e.g., (NH3NH3)(2+), as in the organic-inorganic halide perovskites (e.g., CH3NH3PbI3), are also proposed and found to be stable. The chalcogenide perovskites provide promising candidates for addressing the challenging issues regarding halide perovskites such as instability in the presence of moisture and containing the toxic element Pb.

  3. Chalcogenide Glass for Passive Infrared Applications

    Institute of Scientific and Technical Information of China (English)

    Xianghua Zhang; Hongli Ma; Jacques Lucas

    2003-01-01

    Chalcogenide glass fibers have been successfully used for remote spectroscopy, temperature sensing and CO2 laser power delivery. In bulk form, chalcogenide glass is the most promising candidate for replacing the expensive germanium lenses for thermal imaging.

  4. Chalcogenide glass hollow core microstructured optical fibers

    Science.gov (United States)

    Shiryaev, Vladimir S.

    2015-03-01

    The recent developments on chalcogenide glass hollow core microstructured optical fibers (HC-MOFs) are presented. The comparative analysis of simulated optical properties for chalcogenide HC-MOFs of negative-curvature with different size and number of capillaries is given. The technique for the manufacture of microstructured chalcogenide preforms, which includes the assembly of the substrate glass tube and 8-10 capillaries, is described. Further trends to improve the optical transmission in chalcogenide NCHCFs are considered.

  5. Superconductivity in Fe-chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.C.; Chen, T.K. [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Lee, W.C. [Department of Physics, Applied Physics, and Astronomy, Binghamton University – SUNY (United States); Lin, P.H. [National Synchrotron Research Center, Hsinchu, Taiwan (China); Wang, M.J. [Institute of Astrophysics and Astronomy, Academia Sinica, Taipei, Taiwan (China); Wen, Y.C. [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Wu, P.M. [Deparment of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA (United States); Wu, M.K., E-mail: mkwu@mail.ndhu.edu.tw [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); National Donghwa University, Hualien, Taiwan (China)

    2015-07-15

    FeSe, which has the simplest crystal structure among the Fe based superconductors, and related chalcogenide superconductors are ideal candidates for investigating the detailed mechanism of the iron-based superconductors. Here, we summarize recent studies on the Fe-chalcogenides, with the goal to address some unresolved questions such as what is the influence of chemical stoichiometry on the phase diagram, what is the exact parent phase of FeSe system, and why can T{sub c}s be so dramatically enhanced in FeSe based superconductors? Recent developments in novel synthesis to prepare chalcogenide crystals, nano-materials and thin films allow the community to begin to address these issues. Then we review physical properties of the Fe chalcogenides, specifically focusing on optical properties, scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy (ARPES) results. These measurements along with recent theories provide a framework for better understanding the origin of superconductivity in FeSe and Fe-chalcogenides.

  6. Noble-Metal Chalcogenide Nanotubes

    Directory of Open Access Journals (Sweden)

    Nourdine Zibouche

    2014-10-01

    Full Text Available We explore the stability and the electronic properties of hypothetical noble-metal chalcogenide nanotubes PtS2, PtSe2, PdS2 and PdSe2 by means of density functional theory calculations. Our findings show that the strain energy decreases inverse quadratically with the tube diameter, as is typical for other nanotubes. Moreover, the strain energy is independent of the tube chirality and converges towards the same value for large diameters. The band-structure calculations show that all noble-metal chalcogenide nanotubes are indirect band gap semiconductors. The corresponding band gaps increase with the nanotube diameter rapidly approaching the respective pristine 2D monolayer limit.

  7. Nonlinear Integrated Optical Waveguides in Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    Yinlan; Ruan; Barry; Luther-Davies; Weitang; Li; Andrei; Rode; Marek; Samoc

    2003-01-01

    This paper reports on the study and measurement of the third order optical nonlinearity in bulk sulfide-based chalcogenide glasses; The fabrication process of the ultrafast laser deposited As-S-(Se)-based chalcogenide films and optical waveguides using two techniques: wet chemistry etching and plasma etching.

  8. Method to synthesize metal chalcogenide monolayer nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Sanchez, Bernadette A.; Boyle, Timothy J.

    2016-12-13

    Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes.

  9. Metastable states in amorphous chalcogenide semiconductors

    CERN Document Server

    Mikla, Victor I

    2009-01-01

    This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

  10. Metal chalcogenide nanostructures for renewable energy applications

    CERN Document Server

    Qurashi, Ahsanulhaq

    2014-01-01

    This first ever reference book that focuses on metal chalcogenide semiconductor nanostructures for renewable energy applications encapsulates the state-of-the-art in multidisciplinary research on the metal chalcogenide semiconductor nanostructures (nanocrystals, nanoparticles, nanorods, nanowires,  nanobelts, nanoflowers, nanoribbons and more).  The properties and synthesis of a class of nanomaterials is essential to renewable energy manufacturing and this book focuses on the synthesis of metal chalcogendie nanostructures, their growth mechanism, optical, electrical, and other important prop

  11. Chalcogenide Nanoionic-based Radio Frequency Switch

    Science.gov (United States)

    Nessel, James (Inventor); Lee, Richard (Inventor)

    2013-01-01

    A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.

  12. Multimode supercontinuum generation in chalcogenide glass fibres

    DEFF Research Database (Denmark)

    Kubat, Irnis; Bang, Ole

    2016-01-01

    Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single...

  13. Ultra-precision molding of chalcogenide glass aspherical lens

    Science.gov (United States)

    Zhang, Feng; Wang, Zhibin; Zhang, Yunlong; Su, Ying; Guo, Rui; Xu, Zengqi; Liu, Xuanmin

    2016-10-01

    With the development of infrared optical systems in military and civil areas, chalcogenide glass aspherical lens possess some advantages, such as large infrared transmission, good thermal stability performance and image quality. Aspherical lens using chalcogenide glass can satisfy the requirements of modern infrared optical systems. Therefore, precision manufacturing of chalcogenide glass aspheric has received more and more attention. The molding technology of chalcogenide glass aspheric has become a research hotspot, because it can achieve mass and low cost manufacturing. The article of molding technology is focusing on a kind of chalcogenide glass aspherical lens. We report on design and fabrication of the mold that through simulation analysis of molding. Finally, through molding test, the fabrication of mold's surface and parameters of molding has been optimized, ensuring the indicators of chalcogenide glass aspherical lens meet the requirements.

  14. Chalcogenide Glass Optical Waveguides for Infrared Biosensing

    Science.gov (United States)

    Anne, Marie-Laure; Keirsse, Julie; Nazabal, Virginie; Hyodo, Koji; Inoue, Satoru; Boussard-Pledel, Catherine; Lhermite, Hervé; Charrier, Joël; Yanakata, Kiyoyuki; Loreal, Olivier; Le Person, Jenny; Colas, Florent; Compère, Chantal; Bureau, Bruno

    2009-01-01

    Due to the remarkable properties of chalcogenide (Chg) glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (bio)sensors. PMID:22423209

  15. Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

    DEFF Research Database (Denmark)

    Markos, Christos; Kubat, Irnis; Bang, Ole

    2014-01-01

    The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass ...

  16. Physics and chemistry review of layered chalcogenide superconductors

    OpenAIRE

    Deguchi, Keita; Takano, Yoshihiko; Mizuguchi, Yoshikazu

    2012-01-01

    Structural and physical properties of layered chalcogenide superconductors are summarized. In particular, we review the remarkable properties of the Fe-chalcogenide superconductors, FeSe and FeTe-based materials. Furthermore, we introduce the recently-discovered new BiS2-based layered superconductors and discuss its prospects.

  17. Synthesis and structures of metal chalcogenide precursors

    Science.gov (United States)

    Hepp, Aloysius F.; Duraj, Stan A.; Eckles, William E.; Andras, Maria T.

    1990-01-01

    The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

  18. Chemical Routes to Colloidal Chalcogenide Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Schaak, Raymond

    2015-02-19

    This project sought to develop new low-temperature synthetic pathways to intermetallic and chalcogenide nanostructures and powders, with an emphasis on systems that are relevant to advancing the synthesis, processing, and discovery of superconducting materials. The primary synthetic routes involved solution chemistry methods, and several fundamental synthetic challenges that underpinned the formation of these materials were identified and investigated. Methods for incorporating early transition metals and post transition metals into nanoscale and bulk crystals using low-temperature solution chemistry methods were developed and studied, leading to colloidal nanocrystals of elemental indium, manganese, and germanium, as well as nanocrystalline and bulk intermetallic compounds containing germanium, gallium, tin, indium, zinc, bismuth, and lithium. New chemical tools were developed to help target desired phases in complex binary intermetallic and metal chalcogenide systems that contain multiple stable phases, including direct synthesis methods and chemical routes that permit post-synthetic modification. Several phases that are metastable in bulk systems were targeted, synthesized, and characterized as nanocrystalline solids and bulk powders, including the L12-type intermetallic compounds Au3Fe, Au3Ni, and Au3Co, as well as wurtzite-type MnSe. Methods for accessing crystalline metal borides and carbides using direct solution chemistry methods were also developed, with an emphasis on Ni3B and Ni3C, which revealed useful correlations of composition and magnetic properties. Methods for scale-up and nanoparticle purification were explored, providing access to centimeter-scale pressed pellets of polyol-synthesized nanopowders and a bacteriophage-mediated method for separating impure nanoparticle mixtures into their components. Several advances were made in the synthesis of iron selenide and related superconducting materials, including the production of colloidal Fe

  19. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  20. Radiation-induced defect formation in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I.; Filipecki, J. [Physics Institute of Pedagogical University of Czestochowa, Al. Armii Krajowej 13/15, Czestochowa 42201 (Poland); Kozdras, A. [Physics Laboratory of Opole Technical University, 75 ul. Ozimska, Opole, PL-45370 (Poland); Kavetskyy, T.S. [Lviv Scientific Research Institute of Materials of Scientific Research Company ' Carat' , Stryjska Str. 202, Lviv, UA-79031 (Ukraine)

    2003-10-01

    The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As{sub 2}S{sub 3}-GeS{sub 2} and non-stoichiometric As{sub 2}S{sub 3}-Ge{sub 2}S{sub 3} chalcogenide glasses before and after {gamma}-irradiation.

  1. Debye temperatures of uranium chalcogenides from their lattice dynamics

    Indian Academy of Sciences (India)

    S Durai; P Babu

    2005-12-01

    Phonon dispersion relations in uranium chalcogenides have been investigated using a modified three-body force shell model. From the phonon frequencies, their Debye temperatures are evaluated. Further, on the basis of the spin fluctuation in the heavy fermion uranium compounds, UPt3 and UBe13, the possible superconducting transition temperatures of chalcogenides are theoretically predicted. The c values are in the same range as of those in UPt3 and UBe13.

  2. Electrochemical Synthesis and Characterization of Nanostructured Chalcogenide Materials

    OpenAIRE

    Chang, Chong Hyun

    2011-01-01

    Nanostructured materials have attracted extensive attention due to their small dimension and enhanced properties compared to bulk materials, and their large range of potential applications in energy harvesting devices. Among these materials, nanostructured chalcogenides play an important role in thermoelectric and solar cell devices. Electrochemical techniques have drawn attention as an improved method for synthesizing nanostructured chalcogenide materials, since they provide a cost-effective...

  3. Demonstration of chalcogenide glass racetrack microresonators.

    Science.gov (United States)

    Hu, Juejun; Carlie, Nathan; Petit, Laeticia; Agarwal, Anu; Richardson, Kathleen; Kimerling, Lionel

    2008-04-15

    We have demonstrated what we believe to be the first chalcogenide glass racetrack microresonator using a complementary metal-oxide semiconductor-compatible lift-off technique with thermally evaporated As(2)S(3) films. The device simultaneously features a small footprint of 0.012 mm x 0.012 mm, a cavity Q (quality factor) of 10,000, and an extinction ratio of 32 dB. These resonators exhibit a very high sensitivity to refractive index changes with a demonstrated detection capability of Dn(As(2)S(3)=(4.5 x 10(-6)+/-10%) refractive index unit. The resonators were applied to derive a photorefractive response of As(2)S(3) to lambda=550 nm light. The resonator devices are a versatile platform for both sensing and glass material property investigation.

  4. Chalcogenide glass hollow core photonic crystal fibers

    Science.gov (United States)

    Désévédavy, Frédéric; Renversez, Gilles; Troles, Johann; Houizot, Patrick; Brilland, Laurent; Vasilief, Ion; Coulombier, Quentin; Traynor, Nicholas; Smektala, Frédéric; Adam, Jean-Luc

    2010-09-01

    We report the first hollow core photonic crystal fibers (HC PCF) in chalcogenide glass. To design the required HC PCF profiles for such high index glass, we use both band diagram analysis to define the required photonic bandgap and numerical simulations of finite size HC PCFs to compute the guiding losses. The material losses have also been taken into account to compute the overall losses of the HC PCF profiles. These fibers were fabricated by the stack and draw technique from TeAsSe (TAS) glass. The fibers we drew in this work are composed of six rings of holes and regular microstructures. Two profiles are presented, one is known as a kagome lattice and the other one corresponds to a triangular lattice. Geometrical parameters are compared to the expected parameters obtained by computation. Applications of such fibers include power delivery or fiber sensors among others.

  5. Solution-processing of chalcogenide materials for device applications

    Science.gov (United States)

    Zha, Yunlai

    Chalcogenide glasses are well-known for their desirable optical properties, which have enabled many infrared applications in the fields of photonics, medicine, environmental sensing and security. Conventional deposition methods such as thermal evaporation, chemical vapor deposition, sputtering or pulse laser deposition are efficient for fabricating structures on flat surfaces. However, they have limitations in deposition on curved surfaces, deposition of thick layers and component integration. In these cases, solution-based methods, which involve the dissolution of chalcogenide glasses and processing as a liquid, become a better choice for their flexibility. After proper treatment, the associated structures can have similar optical, chemical and physical properties to the bulk. This thesis presents an in-depth study of solution-processing chalcogenide glasses, starting from the "solution state" to the "film state" and the "structure state". Firstly, chalcogenide dissolution is studied to reveal the mechanisms at molecular level and build a foundation for material processing. Dissolution processes for various chalcogenide solvent pairs are reviewed and compared. Secondly, thermal processing, in the context of high temperature annealing, is explained along with the chemical and physical properties of the annealed films. Another focus is on nanopore formation in propylamine-processed arsenic sulfide films. Pore density changes with respect to annealing temperatures and durations are characterized. Base on a proposed vacancy coalescence theory, we have identified new dissolution strategies and achieved the breakthrough of pore-free film deposition. Thirdly, several solution methods developed along with the associated photonic structures are demonstrated. The first example is "spin-coating and lamination", which produces thick (over 10 mum) chalcogenide structures. Both homogeneous thick chalcogenide structures and heterogeneous layers of different chalcogenide glasses

  6. Optical Nonlinearities in Chalcogenide Glasses and their Applications

    CERN Document Server

    Zakery, A

    2007-01-01

    Photonics, which uses photons for information and image processing, has been labeled the technology of the 21st century, for which non-linear optical processes provide the key functions of frequency conversion and optical switching. Chalcogenide glass fiber is one of the most promising candidates for use as a non-linear optical medium because of its high optical nonlinearity and long interaction length. Since the chalcogenide glass fibers transmit into the IR, there are numerous potential applications in the civil, medical and military areas. One of the most exciting developments in the future is going to be in the area of rare-earth ion doping of chalcogenide fibers for IR fluorescence emission. The IR light sources, lasers and amplifiers developed using this phenomena will be very useful in civil, medical and military applications. Remote IR spectroscopy and imaging using flexible fibers will be realized for applications. Other future research areas which will inevitably be explored includes non-linear opti...

  7. Nonlinear optical localization in embedded chalcogenide waveguide arrays

    Directory of Open Access Journals (Sweden)

    Mingshan Li

    2014-05-01

    Full Text Available We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm2, using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass.

  8. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

    Directory of Open Access Journals (Sweden)

    Priyanka Jood

    2015-03-01

    Full Text Available Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

  9. Electronic-structure calculations of large cadmium chalcogenide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Frenzel, Johannes [Lehrstuhl fuer Theoretische Chemie, Ruhr-Universitaet Bochum (Germany); Joswig, Jan-Ole [Physikalische Chemie, Technische Universitaet Dresden (Germany)

    2012-02-15

    In this paper, we will review our studies of large cadmium chalcogenide nanoparticles and present some new results on cadmium telluride systems. All calculations have been performed using density-functional based methods. The studies deal with the structural properties of saturated and unsaturated nanoparticles where the surfactants generally are hydrogen atoms or thiol groups. We have focused on the investigation of the density of states, the Mulliken charges, the eigenvalue spectra, and the spatial distributions of the frontier orbitals. Optical excitation spectra of pure CdS and CdSe/CdS core-shell systems have been calculated using a linear-response formalism. The reviewed studies are compared to the state of the art of modeling large cadmium chalcogenide particles. Optical excitations in large saturated cadmium chalcogenide nanoparticles with several thousand atoms. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Effect of pressure on the phonon properties of europium chalcogenides

    Indian Academy of Sciences (India)

    U K Sakalle; P K Jha; S P Sanyal

    2000-06-01

    Lattice vibrational properties of europium chalcogenides have been investigated at high pressure by using a simple lattice dynamical model theory viz. the three-body force rigid ion model (TRIM) which includes long range three-body interaction arising due to charge transfer effects. The dispersion curves for the four Eu-chalcogenides agree reasonably well with the available experimental data. Variation of LO, TO, LA and TA phonons with pressure have also been studied at the symmetry points of the brillouin zone (BZ) for Euchalcogenides for the first time by using a lattice dynamical model theory. We have also calculated the one phonon density of states and compared them with the first order Raman scattering results. The calculation of one phonon density of states for Eu-chalcogenides has also been extended up to the phase transition pressure. We observed a pronounced shift in phonon spectrum as pressure is increased.

  11. High surface area graphene-supported metal chalcogenide assembly

    Science.gov (United States)

    Worsley, Marcus A.; Kuntz, Joshua; Orme, Christine A.

    2016-04-19

    A composition comprising at least one graphene-supported assembly, which comprises a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds, and at least one metal chalcogenide compound disposed on said graphene sheets, wherein the chalcogen of said metal chalcogenide compound is selected from S, Se and Te. Also disclosed are methods for making and using the graphene-supported assembly, including graphene-supported MoS.sub.2. Monoliths with high surface area and conductivity can be achieved. Lower operating temperatures in some applications can be achieved. Pore size and volume can be tuned.

  12. Mid infrared supercontinuum generation from chalcogenide glass waveguides and fibers

    DEFF Research Database (Denmark)

    Luther-Davies, Barry; Yu, Yi; Zhang, Bin;

    2015-01-01

    I report work on mid-infrared super-continuum generation in chalcogenide fibers and waveguides pumped by 320fsec pulses at 21MHz in the 3-4.6µm range. Average powers of ≈20mW were produced with spectral coverage from <2µm to >11µm.......I report work on mid-infrared super-continuum generation in chalcogenide fibers and waveguides pumped by 320fsec pulses at 21MHz in the 3-4.6µm range. Average powers of ≈20mW were produced with spectral coverage from 11µm....

  13. Recent Advances in Layered Metal Chalcogenides as Superconductors and Thermoelectric Materials: Fe-Based and Bi-Based Chalcogenides.

    Science.gov (United States)

    Mizuguchi, Yoshikazu

    2016-04-01

    Recent advances in layered (Fe-based and Bi-based) chalcogenides as superconductors or functional materials are reviewed. The Fe-chalcogenide (FeCh) family are the simplest Fe-based high-Tc superconductors. The superconductivity in the FeCh family is sensitive to external or chemical pressure, and high Tc is attained when the local structure (anion height) is optimized. The Bi-chalcogenide (BiCh2) family are a new group of layered superconductors with a wide variety of stacking structures. Their physical properties are also sensitive to external or chemical pressure. Recently, we revealed that the emergence of superconductivity and the Tc in this family correlate with the in-plane chemical pressure. Since the flexibility of crystal structure and electronic states are an advantage of the BiCh2 family for designing functionalities, I briefly review recent developments in this family as not only superconductors but also other functional materials.

  14. On the instability effects in radiation-sensitive chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, V. [Lviv State University for Vital Activity Safety, 35 Kleparivska str., Lviv, UA-79007 (Ukraine); Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Kovalskiy, A. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)], E-mail: shpotyuk@novas.lviv.ua; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)

    2007-04-15

    The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy {gamma}-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters.

  15. Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    McMillen Ben

    2013-11-01

    Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

  16. Chalcogenide microstructured optical fibres for mid-IR applications

    Science.gov (United States)

    Trolès, Johann; Brilland, Laurent

    2017-01-01

    Compared to oxide-based glasses, vitreous materials composed of chalcogen elements (S, Se, Te) show large transparency windows in the infrared. Indeed, chalcogenide glasses can be transparent from the visible up to 12- 18 μm, depending on their compositions. In addition, chalcogenide glasses contain large polarisable atoms and external lone electron pairs that induce exceptional non-linear properties. Consequently, the non-linear properties can be 100 or 1000 times as high as the non-linearity of silica. An original way to obtain single-mode fibres is to design microstructured optical fibres (MOFs). These fibres present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. Various chalcogenide MOFs operating in the IR range have been elaborated in order to associate the high non-linear properties of these glasses with the original MOF properties. Indeed, chalcogenide MOFs might lead to new devices with unique optical properties in the mid-infrared domain, like multimode or endlessly single-mode transmission of light, small or large mode area fibres, highly birefringent fibres and non-linear properties for wavelength conversion or generation of supercontinuum sources. xml:lang="fr"

  17. Magnetic excitations in iron chalcogenide superconductors.

    Science.gov (United States)

    Kotegawa, Hisashi; Fujita, Masaki

    2012-10-01

    Nuclear magnetic resonance and neutron scattering experiments in iron chalcogenide superconductors are reviewed to make a survey of the magnetic excitations in FeSe, FeSe1-x Te x and alkali-metal-doped Ax Fe2-y Se2 (A = K, Rb, Cs, etc). In FeSe, the intimate relationship between the spin fluctuations and superconductivity can be seen universally for the variations in the off-stoichiometry, the Co-substitution and applied pressure. The isovalent compound FeTe has a magnetic ordering with different wave vector from that of other Fe-based magnetic materials. The transition temperature Tc of FeSe increases with Te substitution in FeSe1-x Te x with small x, and decreases in the vicinity of the end member FeTe. The spin fluctuations are drastically modified by the Te substitution. In the vicinity of the end member FeTe, the low-energy part of the spin fluctuation is dominated by the wave vector of the ordered phase of FeTe; however, the reduction of Tc shows that it does not support superconductivity. The presence of same wave vector as that of other Fe-based superconductors in FeSe1-x Te x and the observation of the resonance mode demonstrate that FeSe1-x Te x belongs to the same group as most of other Fe-based superconductors in the entire range of x, where superconductivity is mediated by the spin fluctuations whose wave vector is the same as the nesting vector between the hole pockets and the electron pockets. On the other hand, the spin fluctuations differ for alkali-metal-doped Ax Fe2-y Se2 and FeSe or other Fe-based superconductors in their wave vector and strength in the low-energy part, most likely because of the different Fermi surfaces. The resonance mode with different wave vector suggests that Ax Fe2-y Se2 has an exceptional superconducting symmetry among Fe-based superconductors.

  18. Error-free 640 Gbit/s demultiplexing using a chalcogenide planar waveguide chip

    DEFF Research Database (Denmark)

    Xu, Jing; Galili, Michael; Mulvad, Hans Christian Hansen;

    2008-01-01

    We demonstrate error free, low-penalty demultiplexing of a 640 Gbit/s OTDM signal to 10 Gbit/s using a 5cm long chalcogenide planar waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide.......We demonstrate error free, low-penalty demultiplexing of a 640 Gbit/s OTDM signal to 10 Gbit/s using a 5cm long chalcogenide planar waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide....

  19. Synthesis of cadmium chalcogenide nanotubes at room temperature

    KAUST Repository

    Pan, Jun

    2012-10-01

    Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

  20. Mold design with simulation for chalcogenide glass precision molding

    Science.gov (United States)

    Zhang, Yunlong; Wang, Zhibin; Li, Junqi; Zhang, Feng; Su, Ying; Wang, Zhongqiang

    2016-10-01

    Compare with the manufacturing of the traditional infrared material, such as signal crystal germanium, zinc sulfide, zinc selenide etc, chalcogenide infrared glass is suitable for precision molding for the low soften temperature to have large mass industry production. So the researches of precision glass molding are necessary, especially for the fast development of infrared product. The mold design is one of the key technologies of precision glass molding. In this paper, the mold processing of a sample chalcogenide glass from the technical drawing, mold design, molding to the lens are introduced. From the result of the precision molding, the technology of finite element simulation is a useful way to guiding the mold design. The molded lens by using mold process fit the design requirement.

  1. Nonlinear light propagation in chalcogenide photonic crystal slow light waveguides.

    Science.gov (United States)

    Suzuki, Keijiro; Baba, Toshihiko

    2010-12-06

    Optical nonlinearity can be enhanced by the combination of highly nonlinear chalcogenide glass and photonic crystal waveguides (PCWs) providing strong optical confinement and slow-light effects. In a Ag-As(2)Se(3) chalcogenide PCW, the effective nonlinear parameter γeff reaches 6.3 × 10(4) W(-1)m(-1), which is 200 times larger than that in Si photonic wire waveguides. In this paper, we report the detailed design, fabrication process, and the linear and nonlinear characteristics of this waveguide at silica fiber communication wavelengths. We show that the waveguide exhibits negligible two-photon absorption, and also high-efficiency self-phase modulation and four-wave mixing, which are assisted by low-dispersion slow light.

  2. Microbial synthesis of chalcogenide semiconductor nanoparticles: a review

    OpenAIRE

    Jacob, Jaya Mary; Lens, Piet N. L.; Balakrishnan, Raj Mohan

    2015-01-01

    Summary Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment‐friendly synthesis procedures. Microbial factories hold immense potentia...

  3. Electronic structure of ruthenium-doped iron chalcogenides

    Science.gov (United States)

    Winiarski, M. J.; Samsel-Czekała, M.; Ciechan, A.

    2014-12-01

    The structural and electronic properties of hypothetical RuxFe1-xSe and RuxFe1-xTe systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions RuxFe1-xSe and RuxFe1-xTe become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the RuxFe1-xSe and RuxFe1-xTe systems are good candidates for new superconducting iron-based materials.

  4. Low temperature Hall effect in bismuth chalcogenides thin films

    OpenAIRE

    Kuntsevich, A. Yu.; Gabdullin, A. A.; Prudkogliad, V. A.; Selivanov, Yu. G.; Chizhevskii, E. G.; Pudalov, V. M.

    2016-01-01

    Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenologi...

  5. STUDIES OF CHALCOGENIDE VITREOUS SEMICONDUCTORS IN THE IOFFE PHYSICOTECHNICAL INSTITUTE

    OpenAIRE

    Kolomiets, B.

    1981-01-01

    The broad class of semiconductors discovered at the Ioffe Physical-Technical Institute in 1955-56 [1] and termed at present chalcogenide vitreous semiconductors (ChVS) has recently been attracting ever increasing interest of the researchers due to many properties which are unusual for crystalline semiconductors. During a number of years, our interests here been primarily connected with such basic problems as the transport phenomena, electronic spectrum, the role of impurities, optical and pho...

  6. Local tuning of photonic crystal cavities using chalcogenide glasses

    CERN Document Server

    Faraon, Andrei; Bulla, Douglas; Luther-Davies, Barry; Eggleton, Benjamin J; Stoltz, Nick; Petroff, Pierre; Vuckovic, Jelena

    2007-01-01

    We demonstrate a method to locally change the refractive index in planar optical devices by photodarkening of a thin chalcogenide glass layer deposited on top of the device. The method is used to tune the resonance of GaAs-based photonic crystal cavities by up to 3 nm at 940 nm, with only 5% deterioration in cavity quality factor. The method has broad applications for postproduction tuning of photonic devices.

  7. Chalcogenide material strengthening through the lens molding process

    Science.gov (United States)

    Nelson, J.; Scordato, M.; Lucas, Pierre; Coleman, Garrett J.

    2016-05-01

    The demand for infrared transmitting materials has grown steadily for several decades as markets realize new applications for longer wavelength sensing and imaging. With this growth has come the demand for new and challenging material requirements that cannot be satisfied with crystalline products alone. Chalcogenide materials, with their unique physical, thermal, and optical properties, have found acceptance by designers and fabricators to meet these demands. No material is perfect in every regard, and chalcogenides are no exception. A cause for concern has been the relatively low fracture toughness and the propensity of the bulk material to fracture. This condition is amplified when traditional subtractive manufacturing processes are employed. This form of processing leaves behind micro fractures and sub surface damage, which act as propagation points for both local and catastrophic failure of the material. Precision lens molding is not a subtractive process, and as a result, micro fractures and sub surface damage are not created. This results in a stronger component than one produced by traditional methods. New processing methods have also been identified that result in an even stronger surface that is more resistant to breakage, without the need for post processing techniques that may compromise surface integrity. This paper will discuss results achieved in the process of lens molding development at Edmund Optics that result in measurably stronger chalcogenide components. Various metrics will be examined and data will be presented that quantifies component strength for different manufacturing processes.

  8. Linear and nonlinear optical properties of chalcogenide microstructured optical fibers

    Science.gov (United States)

    Trolès, Johann; Brilland, Laurent; Caillaud, Celine; Renversez, Gilles; Mechin, David; Adam, Jean-Luc

    2015-03-01

    Chalcogenide glasses are known for their large transparency in the mid-infrared and their high linear refractive index (>2). They present also a high non-linear coefficient (n2), 100 to 1000 times larger than for silica, depending on the composition. we have developed a casting method to prepare the microstructured chalcogenide preform. This method allows optical losses as low as 0.4 dB/m at 1.55 µm and less than 0.05 dB/m in the mid IR. Various chalcogenide MOFs operating in the IR range has been fabricated in order to associate the high non-linear properties of these glasses and the original MOF properties. For example, small core fibers have been drawn to enhance the non linearities for telecom applications such as signal regeneration and generation of supercontinuum sources. On another hand, in the 3-12 µm window, single mode fibers and exposed core fibers have been realized for Gaussian beams propagation and sensors applications respectively.

  9. Synthesis, characterization, and structure of reduced tungsten chalcogenide cluster complexes

    Energy Technology Data Exchange (ETDEWEB)

    Xiaobing, Xie

    1997-02-01

    Over the previous twenty years, ternary molybdenum chalcogenides of the general formula M{sub x}Mo{sub 6}Y{sub 8} (M = ternary metal cation; Y = chalcogenide), known as Chevrel phases, have been extensively studied. Many of these compounds have been found to have superconductivity, catalytic activity and ionic conductivity. The rich chemistry of the Chevrel phases raises considerable interest in finding the tungsten analogues of these phases. However, no such analogue has ever been synthesized, although the Chevrel phases are usually prepared directly from elements at high temperatures above 1000{degrees}C. The absence of the tungsten analogues may be caused by their thermodynamic instability at such high temperatures. Thus it might be necessary to avoid high-temperature synthetic procedures in order to establish the ternary and binary tungsten chalcogenides. A major focus of the McCarley research group has been on the preparation of M{sub 6}Y{sub 8}L{sub 6} (M = Mo, W; Y = S, Se, Te) cluster complexes as low temperature pathways to the Chevrel phases.

  10. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  11. Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

    NARCIS (Netherlands)

    Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

    2011-01-01

    Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

  12. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    Science.gov (United States)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  13. Chemical synthesis and modification of target phases of chalcogenide nanomaterials

    Science.gov (United States)

    Sines, Ian T.

    Inorganic nanoparticles have been at the forefront of materials research in recent years due to their utility in modern technological processes. Chalcogenide nanomaterials are of particular interest because of their wide range of desirable properties for semiconductors, magnetic devices, and energy industries. Primary factors that dictate the properties of the material are the elemental composition, crystal structure, stoichiometry, crystallite size, and particle morphology. One of the most common approaches to synthesize these materials is through solution mediated routes. This approach offers unique advantages in controlling the morphology and particle size that other methods lack. This dissertation describes our recent work on exploiting solution chemical routes to control the crystal structure and composition of chalcogenide nanomaterials. We will start by discussing solution chemistry routes to synthesize non-equilibrium phases of chaclogenide nanomaterials. By using low-temperature bottom-up techniques it is possible to trap kinetically stable phases that cannot be accessed using traditional high-temperature techniques. We used solution chemistry to synthesize and characterize, for the first time, wurtzite-type MnSe. Wurtzite-type MnSe is the end-member of the highly investigated ZnxMn1-xSe solid solution, a classic magnetic semiconductor system. We will then discuss PbO-type FeS, another non-equilibrium phase that is isostructural with the superconducting phase of FeSe. We synthesized phase-pure PbO-type FeS using a low-temperature solvothermal route. We will then discuss the post-synthetic modification of chalcogenides nanomaterials. By exploiting the solubility of Se and S in tri-n-octylphosphine we can selectively extract the chalcogen from preformed chalcogenide nanomaterials. This gives chemists a technique for purification and phase-targeting of particular chalcogenide phases. This method can be modified to facilitate anion exchange. When Te is

  14. The intercalation chemistry of layered iron chalcogenide superconductors

    Science.gov (United States)

    Vivanco, Hector K.; Rodriguez, Efrain E.

    2016-10-01

    The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials-mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

  15. Chalcogenide photovoltaics physics, technologies, and thin film devices

    CERN Document Server

    Scheer, Roland

    2011-01-01

    This first comprehensive description of the most important material properties and device aspects closes the gap between general books on solar cells and journal articles on chalcogenide-based photovoltaics. Written by two very renowned authors with years of practical experience in the field, the book covers II-VI and I-III-VI2 materials as well as energy conversion at heterojunctions. It also discusses the latest semiconductor heterojunction models and presents modern analysis concepts. Thin film technology is explained with an emphasis on current and future techniques for mass production, a

  16. Low-temperature Hall effect in bismuth chalcogenides thin films

    Science.gov (United States)

    Kuntsevich, A. Yu.; Gabdullin, A. A.; Prudkogliad, V. A.; Selivanov, Yu. G.; Chizhevskii, E. G.; Pudalov, V. M.

    2016-12-01

    Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures, thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using a purely phenomenological approach, with no microscopic theory, we show that the low-temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with the diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.

  17. Ultrafast laser fabrication of Bragg waveguides in chalcogenide glass.

    Science.gov (United States)

    McMillen, Ben; Li, Mingshan; Huang, Sheng; Zhang, Botao; Chen, Kevin P

    2014-06-15

    Bragg waveguides are fundamental components in photonic integrated circuits and are particularly interesting for mid-IR applications in high index, highly nonlinear materials. In this work, we present Bragg waveguides fabricated in bulk chalcogenide glass using an ultrafast laser. Waveguides with near circularly symmetric cross sections and low propagation loss are obtained through spatial and temporal beam shaping. Using a single-pass technique, the waveguide and Bragg structure are formed at the same time. First through sixth order gratings with strengths of up to 25 dB are realized, and performance is evaluated based on the modulation duty cycle of the writing beam.

  18. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Scientific Research Company “Carat” (Ukraine); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Shpotyuk, M. [Scientific Research Company “Carat” (Ukraine); Ingram, A. [Opole Technical University (Poland); Szatanik, R. [Opole University (Poland)

    2015-03-15

    Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

  19. Reversibility windows in selenide-based chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Hyla, M. [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Boyko, V. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Lviv National Polytechnic University, 12, Bandera Street, Lviv, UA 79013 (Ukraine); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine)], E-mail: golovchak@novas.lviv.ua

    2008-10-01

    A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory.

  20. Narrow linewidth Brillouin laser based on chalcogenide photonic chip

    CERN Document Server

    Kabakova, Irina V; Choi, Duk-Yong; Debbarma, Sukhanta; Luther-Davies, Barry; Madden, Stephen J; Eggleton, Benjamin J

    2013-01-01

    We present the first demonstration of a narrow linewidth, waveguide-based Brillouin laser which is enabled by large Brillouin gain of a chalcogenide chip. The waveguides are equipped with vertical tapers for low loss coupling. Due to optical feedback for the Stokes wave, the lasing threshold is reduced to 360 mW, which is 5 times lower than the calculated single-pass Brillouin threshold for the same waveguide. The slope efficiency of the laser is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

  1. Optical properties of chalcogenide Ge-Te-In thin films

    Science.gov (United States)

    Zaidan, A.; Ivanova, V.; Petkov, P.

    2012-03-01

    Thin films of the chalcogenide (GeTe4)1-xInx with various compositions (x = 0, 5, 10, 15, 20 at %) were deposited under vacuum on glass substrates by thermal evaporation. The optical transmission and reflection spectra of the films at normal incidence were investigated in the spectral range from 800 to 2600 nm. Using the transmission spectra, the optical constants (refractive index (n) and extinction coefficient (k)) were calculated based on Swanepoel's method. The optical band gap (Egopt) was also estimated using Tauc's extrapolation procedure.

  2. The electronic structure of europium chalcogenides and pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Horne, M [Department of Physics, Keele University, Staffordshire ST5 5DY (United Kingdom); Strange, P [Department of Physics, Keele University, Staffordshire ST5 5DY (United Kingdom); Temmerman, W M [Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Svane, A [Institute of Physics and Astronomy, University of Aarhus, DK-8000, Aarhus (Denmark); Winter, H [INFP, Forschungzentrum Karlsruhe GmbH, Postfach 3640, D-76021, Karlsruhe (Germany)

    2004-07-21

    The electronic structure of some europium chalcogenides and pnictides is calculated using the ab initio self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localized description of the rare earth f-electrons and an itinerant description of s-, p-, and d-electrons. Localizing different numbers of f-electrons on the rare earth atom corresponds to different nominal valencies, and the total energies can be compared, providing a first-principles description of valency. All the chalcogenides are found to be insulators in the ferromagnetic state and to have a divalent configuration. For the pnictides we find that EuN is half-metallic and the rest are normal metals. However, a valence change occurs as we go down the pnictide column of the periodic table. EuN and EuP are trivalent, EuAs is only just trivalent, and EuSb is found to be divalent. Our results suggest that these materials may find applications in spintronic and spin filtering devices.

  3. New Trends in Amplifiers and Sources via Chalcogenide Photonic Crystal Fibers

    Directory of Open Access Journals (Sweden)

    L. Mescia

    2012-01-01

    Full Text Available Rare-earth-doped chalcogenide glass fiber lasers and amplifiers have great applicative potential in many fields since they are key elements in the near and medium-infrared (mid-IR wavelength range. In this paper, a review, even if not exhaustive, on amplification and lasing obtained by employing rare-earth-doped chalcogenide photonic crystal fibers is reported. Materials, devices, and feasible applications in the mid-IR are briefly mentioned.

  4. Gadolinium-Induced Multi-Effect on Properties of IR Transmitting Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    ZHAO Dong-Hui; XIA Fang; NIE Jia-Xiang; CHEN Guo-Rong; ZHANG Xiang-Hua; MA Hong-Li; ADAM Jean-Luc

    2004-01-01

    @@ We introduce gadolinium in chalcogenide glasses to exert unexpectedly the multiple magical effects on both optical and thermal mechanical properties of chalcogenide glasses. Notable increases in transition temperature Tg and microhardness Hv were observed due to structural densitication and microcrystallization. Calculated molar volume values, differential scanning calorimetry and x-ray diffraction measurements provide supporting evidences. Gadolinium also acts as oxygen getter by removing or weakening oxygen-related absorption bands,which is associated with the higher negative electrode potential.

  5. Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Li-Na; Wang, H.C.; Shen, Y.; Lin, Yuan-Hua, E-mail: linyh@mail.tsinghua.edu.cn; Nan, Ce-Wen [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2016-01-15

    Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors.

  6. Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te

    Directory of Open Access Journals (Sweden)

    Li-Na Qiao

    2016-01-01

    Full Text Available Nanostructured lead chalcogenides (PbX, X = Te, Se, S were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors.

  7. Comparison of loss in silica and chalcogenide negative curvature fibers as the wavelength varies

    Directory of Open Access Journals (Sweden)

    Chengli Wei

    2016-07-01

    Full Text Available We computationally study fiber loss in negative curvature fibers made with silica, As2S3 chalcogenide, and As2Se3 chalcogenide glasses with a fixed core-diameter-to-wavelength ratio of 30. We consider both simple and nested geometries as the transmission wavelength varies. At wavelengths shorter than 4.5 µm, silica negative curvature fibers have a loss that is around or below 0.1 dB/m and are preferable to chalcogenide fibers. At wavelengths longer than 4.5 µm, it is preferable to use As2S3 chalcogenide or As2Se3 chalcogenide negative curvature fibers since their loss is one or more orders of magnitude lower than the loss of silica negative curvature fibers. With nested negative curvature fibers, chalcogenide fibers have losses that are lower than those of silica fibers at wavelengths larger than 2 µm. However, it is still preferable to use silica nested negative curvature fibers at wavelengths less than 4.5 µm and with a loss around or lower than 0.1 dB/m due to the fabrication advantages of silica fibers.

  8. Analysis of switching conditions of chalcogenide alloys during crystallization

    Institute of Scientific and Technical Information of China (English)

    Wanhua Yu; C.D. Wright

    2006-01-01

    To understand the principle and limitation of chalcogenide alloy Ge2Sb2Te5 (GST) in solid-state memory devices during crystallization, it was necessary to develop a physically realistic model that could reflect the electrical and thermal properties of these media. A novel comprehensive numerical model has been developed for simulating these memory devices, which describes the electrical and thermal behavior using the solution of the nonlinear, time-dependent electrical and heat conduction equation. The finite-difference-time-domain technique was adopted to compute the electrical field and heat distribution in the device. Several contributing factors that affect the crystallization switching process such as the geometry of the GST layer, temperature and electric field dependency of the electrical conductivity have been discussed. The results of the simulations were then used to provide critical guidelines for fabrication and optimization of the device performance.

  9. Electrical conduction mechanism in GeSeSb chalcogenide glasses

    Indian Academy of Sciences (India)

    Vandana Kumari; Anusaiya Kaswan; D Patidar; Kananbala Sharma; N S Saxena

    2016-02-01

    Electrical conductivity of chalcogenide glassy system Ge$_{30−x}$Se$_{70}$Sb$_{x}$ ( = 10, 15, 20 and 25) prepared by melt quenching has been determined at different temperatures in bulk through the $I$–$V$ characteristic curves. It is quite evident from results that Poole–Frenkel conduction mechanisms hold good for conduction in these glasses in a given temperature range. The variation in electrical conductivity with composition was attributed to the Se–Sb bond concentration in the Se–Ge–Sb system. Results indicated that Ge$_5$Se$_{70}$Sb$_{25}$ showed the minimum resistance. In view of this the composition Ge$_5$Se$_{70}$Sb$_{25}$ may be coined as ‘critical composition’ in the proposed series. Also the activation energies of conduction of these glassy alloys have been calculated in higher and lower temperature range using the Arrhenius equation.

  10. Phase segregation in Pb:GeSbTe chalcogenide system

    Science.gov (United States)

    Kumar, J.; Ahmad, M.; Chander, R.; Thangaraj, R.; Sathiaraj, T. S.

    2008-01-01

    Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge{2}Sb{2}Te{5} has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in Pb{0}Ge{20}Sb{24}Te{56}, Pb{1.6}Ge{19}Sb{26}Te{54}, Pb{3}Ge{17}Sb{28}Te{53} and Pb{5}Ge{12}Sb{28}Te{55} respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

  11. Phase transformation in Pb:GeSbTe chalcogenide films

    Science.gov (United States)

    Kumar, J.; Kumar, P.; Ahmad, M.; Chander, R.; Thangaraj, R.; Sathiaraj, T. S.

    2008-11-01

    A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.

  12. Longitudinal Magnetoresistance and "Chiral" Coupling in Silver Chalcogenides

    Institute of Scientific and Technical Information of China (English)

    XU Jie; ZHANG Duan-Ming

    2011-01-01

    A complex longitudinal magnetoresistance (MR∥) effect in the non-stoichiometric silver chalcogenides (include the silver selenide and telluride) has been found, however the mechanism for the MR∥ effect is not clear now.In this work, a new random resistor network for MR∥ effect is proposed based on the experimental observation. The network is constructed from six-terminal resistor units and the mobility of carries within the network has a Gaussian distribution. Considering the non-zero transverse-longitudinal coupling in materials, the resistance matrix of the sixterminal resistor unit is modified. It is found that the material has the "chiral" transverse-longitudinal couplings, which is suggested a main reason for the complex MR∥ effect. The model predictions are compared with the experimental results.A three dimension (3D) visualization of current flow within the network demonstrates the "current jets" phenomenon in the thickness of materials clearly.

  13. Flexible chalcogenide glass microring resonator for mid-infrared emission

    Science.gov (United States)

    Wang, Liangliang; Li, Lijing; Sun, Mingjie

    2016-10-01

    Emerging applications in communication, sensing, medical, and many other fields call for on-chip microring laser, however, the method to make it work at mid-infrared still need to be explored. In this paper, a microring resonator integrated in flexible substrate is designed and evaluated, with high Q-factor ( 105) at pump and signal wavelengths, achieving emission in mid-infrared (3.6μm) using rare earth doped chalcogenide glass. Furthermore, the strain-optical coupling in multilayer flexible materials is numerically verified, and a 0.3 nm/μɛ resonance wavelength shift is achieved by local neutral axis theory, without significant loss of flexible device performance.

  14. Meyer–Neldel DC conduction in chalcogenide glasses

    Indian Academy of Sciences (India)

    S PraKash; Kulbir Kaur; Navdeep Goyal; S K Tripathi

    2011-04-01

    Meyer–Neldel (MN) formula for DC conductivity (DC) of chalcogenide glasses is obtained using extended pair model and random free energy barriers. The integral equations for DC hopping conductivity and external conductance are solved by iterative procedure. It is found that MN energy ( MN) originates from temperature-induced configurational and electronic disorders. Single polaron-correlated barrier hopping model is used to calculate DC and the experimental data of Se, As2S3, As2Se3 and As2Te3 are explained. The variation of attempt frequency 0 and MN with parameter (/), where is the intersite separation and is the radius of localized states, is also studied. It is found that 0 and MN decrease with increase of (/), and MN may not be present for low density of defects.

  15. Fabrication and characterization of chalcogenide glass photonic crystal waveguides.

    Science.gov (United States)

    Suzuki, Keijiro; Hamachi, Yohei; Baba, Toshihiko

    2009-12-07

    We report on the fabrication of chalcogenide glass (Ag-As(2)Se(3)) photonic crystal waveguides and the first detailed characterization of the linear and nonlinear optical properties. The waveguides, fabricated by e-beam lithography and ICP etching exhibit typical transmission spectra of photonic crystal waveguides, and exhibit high optical nonlinearity. Nonlinear phase shift of 1.5pi through self-phase modulation is observed at 0.78 W input peak power in a 400 microm long device. The effective nonlinear parameter gamma(eff) estimated from this result reaches 2.6 x 10(4) W(-1)m(-1). Four-wave mixing is also observed in the waveguide, while two-photon absorption at optical communication wavelengths is sufficiently small and the corresponding figure of merit is larger than 11.

  16. Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

    Energy Technology Data Exchange (ETDEWEB)

    Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

    2013-04-30

    For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

  17. Qualification and metrology for US-produced chalcogenides

    Science.gov (United States)

    Carlie, Nathan

    2012-06-01

    The recent trend in infrared optics has been toward higher resolution with wider fields of view, lower weight and size, and broader temperature ranges. This places much more stringent requirements on the measurement and control of the properties of the optical materials within these systems. In response to these demands, SCHOTT North America recently announced domestic production of the IG glass series (IG2-IG6) of chalcogenide glasses within the US which has spurred renewed focus the characterization to bring these glasses to a similar level as standard optical glasses. This paper will present and discuss the novel inspection systems and the process used to qualify refractive index of these materials, with a focus on data presentation, in order to demonstrate the methodology and utility of the methods and data produced.

  18. 10 um wavefront spatial filtering first results with chalcogenide fibers

    CERN Document Server

    Bordé, P J; Nguyen, T; Amy-Klein, A; Daussy, C; Raynal, P; Léger, A; Mazé, G; Borde, Pascal; Perrin, Guy; Nguyen, Thanh; Amy-Klein, Anne; Daussy, Christophe; Raynal, Pierre-Ivan; Leger, Alain; Maze, Gwenael

    2003-01-01

    Wavefront cleaning by single-mode fibers has proved to be efficient in optical-infrared interferometry to improve calibration quality. For instance, the FLUOR instrument has demonstrated the capability of fluoride glass single-mode fibers in this respect in the K and L bands. New interferometric instruments developped for the mid-infrared require the same capability for the 8-12 um range. We have initiated a program to develop single-mode fibers in the prospect of the VLTI mid-infrared instrument MIDI and of the ESA/DARWIN and NASA/TPF missions that require excellent wavefront quality. In order to characterize the performances of chalcogenide fibers we are developping, we have set up an experiment to measure the far-field pattern radiated at 10 um. In this paper, we report the first and promising results obtained with this new component.

  19. Structural phase transition and elastic properties of mercury chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Shriya, S. [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria)

    2012-08-15

    Pressure induced structural transition and elastic properties of ZnS-type (B3) to NaCl-type (B1) structure in mercury chalcogenides (HgX; X = S, Se and Te) are presented. An effective interionic interaction potential (EIOP) with long-range Coulomb, as well charge transfer interactions, Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbor ions and van der Waals interactions are considered. Emphasis is on the evaluation of the pressure dependent Poisson's ratio {nu}, the ratio R{sub BT/G} of B (bulk modulus) over G (shear modulus), anisotropy parameter, Shear and Young's modulus, Lame constant, Kleinman parameter, elastic wave velocity and thermodynamical property as Debye temperature. The Poisson's ratio behavior infers that Mercury chalcogenides are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations. Highlights: Black-Right-Pointing-Pointer Vast volume discontinuity in phase diagram infers transition from ZnS to NaCl structure. Black-Right-Pointing-Pointer The shear elastic constant C{sub 44} is nonzero confirms the mechanical stability. Black-Right-Pointing-Pointer Pressure dependence of {theta}{sub D} infers the softening of lattice with increasing pressure. Black-Right-Pointing-Pointer Estimated bulk, shear and tetragonal moduli satisfied elastic stability criteria. Black-Right-Pointing-Pointer In both B3 and B1 phases, C{sub 11} and C{sub 12} increase linearly with pressure.

  20. Infrared emitting and photoconducting colloidal silver chalcogenide nanocrystal quantum dots from a silylamide-promoted synthesis.

    Science.gov (United States)

    Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Günter; Heiss, Wolfgang

    2011-05-24

    Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.

  1. Alloyed copper chalcogenide nanoplatelets via partial cation exchange reactions.

    Science.gov (United States)

    Lesnyak, Vladimir; George, Chandramohan; Genovese, Alessandro; Prato, Mirko; Casu, Alberto; Ayyappan, S; Scarpellini, Alice; Manna, Liberato

    2014-08-26

    We report the synthesis of alloyed quaternary and quinary nanocrystals based on copper chalcogenides, namely, copper zinc selenide-sulfide (CZSeS), copper tin selenide-sulfide (CTSeS), and copper zinc tin selenide-sulfide (CZTSeS) nanoplatelets (NPLs) (∼20 nm wide) with tunable chemical composition. Our synthesis scheme consisted of two facile steps: i.e., the preparation of copper selenide-sulfide (Cu2-xSeyS1-y) platelet shaped nanocrystals via the colloidal route, followed by an in situ cation exchange reaction. During the latter step, the cation exchange proceeded through a partial replacement of copper ions by zinc or/and tin cations, yielding homogeneously alloyed nanocrystals with platelet shape. Overall, the chemical composition of the alloyed nanocrystals can easily be controlled by the amount of precursors that contain cations of interest (e.g., Zn, Sn) to be incorporated/alloyed. We have also optimized the reaction conditions that allow a complete preservation of the size, morphology, and crystal structure as that of the starting Cu2-xSeyS1-y NPLs. The alloyed NPLs were characterized by optical spectroscopy (UV-vis-NIR) and cyclic voltammetry (CV), which demonstrated tunability of their light absorption characteristics as well as their electrochemical band gaps.

  2. Nonlinear characterization of GeSbS chalcogenide glass waveguides

    Science.gov (United States)

    Choi, Ju Won; Han, Zhaohong; Sohn, Byoung-Uk; Chen, George F. R.; Smith, Charmayne; Kimerling, Lionel C.; Richardson, Kathleen A.; Agarwal, Anuradha M.; Tan, Dawn T. H.

    2016-12-01

    GeSbS ridge waveguides have recently been demonstrated as a promising mid – infrared platform for integrated waveguide – based chemical sensing and photodetection. To date, their nonlinear optical properties remain relatively unexplored. In this paper, we characterize the nonlinear optical properties of GeSbS glasses, and show negligible nonlinear losses at 1.55 μm. Using self – phase modulation experiments, we characterize a waveguide nonlinear parameter of 7 W‑1/m and nonlinear refractive index of 3.71 × 10‑18 m2/W. GeSbS waveguides are used to generate supercontinuum from 1280 nm to 2120 nm at the ‑30 dB level. The spectrum expands along the red shifted side of the spectrum faster than on the blue shifted side, facilitated by cascaded stimulated Raman scattering arising from the large Raman gain of chalcogenides. Fourier transform infrared spectroscopic measurements show that these glasses are optically transparent up to 25 μm, making them useful for short – wave to long – wave infrared applications in both linear and nonlinear optics.

  3. Generation of λ/12 nanowires in chalcogenide glasses.

    Science.gov (United States)

    Nicoletti, Elisa; Bulla, Douglas; Luther-Davies, Barry; Gu, Min

    2011-10-12

    Nanowires have been widely studied and have gained a lot of interest in the past decade. Because of their high refractive index and high nonlinearity, chalcogenide glasses (ChGs) are a good candidate for the fabrication of photonic nanowires as such nanowaveguides provide the maximal confinement of light, enabling large enhancement of nonlinear interactions and group-velocity dispersion engineering. Here we report on the generation of λ/12 (∼68 nm) nanowires based on the theoretical and experimental study of the influence of the laser repetition rate on the direct laser fabrication in ChGs (λ = 800 nm). Through a numerical model of cumulative heating, the optimum conditions for high-resolution fabrication in As(2)S(3) are found. Nanowires with dimensions down to ∼λ/12 are for the first time successfully fabricated in ChGs. We show that the generated nanowires can be stacked to form a three-dimensional woodpile photonic crystal with a pronounced stop gap.

  4. Palladium and platinum organochalcogenolates and their transformation into metal chalcogenides

    Indian Academy of Sciences (India)

    S Dey; S Narayan; A Singhal; V K Jain

    2000-06-01

    Platinum group metal chalcogenides find extensive applications in catalysis and in the electronic industry. To develop an efficient low temperature clean preparation of these materials, molecular routes have been explored. Thus the chemistry of mononuclear organochalcogenolates of the type [M(ER 1/4)2(PR3)2], binuclear benzylselenolates, [M2Cl2(∼-SeBz)2(PR3)2], allylpalladium complexes [Pd2(μ-ER)2(3-C4H7)2] and palladium/platinum sulphido/selenido-bridged complexes, [M2(μ-E)2L4] (M = Pd or Pt; E = S, Se or Te; L = tertiary phosphine ligand) has been investigated. All the complexes have been characterized by elemental analysis, NMR (1 H, 31P, 77Se, 195Pt) spectroscopy and in some cases by X-ray diffraction. The thermal behaviour of these complexes has been studied by TGA. The pyrolysis of allylpalladium complexes in refluxing xylene yields Pd4E as established by analysis and XRD patterns.

  5. Raman spectroscopy of chalcogenide thin films prepared by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Erazu, M.; Rocca, J. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Fontana, M., E-mail: merazu@fi.uba.a [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Urena, A.; Arcondo, B. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Pradel, A. [ICG, UMR 5253 CNRS UM 2 ENSCM UM1 equipe PMDP CC3, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

    2010-04-16

    Chalcogenide glasses have many technological applications as a result of their particular optical and electrical properties. Ge-Se and Ag-Ge-Se systems were recently studied and tested as new materials for building non-volatile memories. Following these ideas, thin films of Ge-Se and Ag-Ge-Se were deposited using pulsed laser deposition (PLD). Ag was sputtered over binary films (for a composition between 0.05 and 0.25 Ag atomic fraction) and photo-diffused afterwards. Thus, three kinds of samples were analyzed by means of Raman spectroscopy, in order to provide information on the short- and medium-range order: PLD binary films before Ag doping, after Ag doping and PLD ternary films. Before Ag doping, binary films exhibited Ge-Se corner-sharing tetrahedra modes at 190 cm{sup -1}, low scattering from edge-sharing tetrahedra at 210 cm{sup -1}, and Se chains at 260 cm{sup -1} (stretching mode). However, after the diffusion process was complete, we observed an intensity reduction of bands centered at 210 cm{sup -1} and 260 cm{sup -1}. The spectra of the photo-diffused films were similar to those of films deposited using a ternary target. Relaxation effects in binary glasses were also analyzed. Results were compared with those of other authors.

  6. Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

    Institute of Scientific and Technical Information of China (English)

    李超然; 戴世勋; 张勤远; 沈祥; 王训四; 张培晴; 路来伟; 吴越豪; 吕社钦

    2015-01-01

    We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q (∼6×104) laser mode could be obtained from a 75-µm diameter microsphere that is coupled with a 1.77-µm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser.

  7. Theoretical studies on mid-infrared amplification in Ho{sup 3+}-doped chalcogenide glass fibers

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Shulin [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Yinsheng [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); The School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211 (China); Dai, Shixun, E-mail: daishixun@nbu.edu.cn [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Zhou, Yaxun [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Lin, Changgui [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); The School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211 (China); Zhang, Peiqing [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

    2013-05-01

    This paper investigated the MIR emission of Ho{sup 3+}-doped Ge{sub 20}Ga{sub 5}Sb{sub 10}S{sub 65} chalcogenide glasses upon excitation of 900 nm laser diode. The spontaneous emission probability, absorption cross-section, and emission cross-section were calculated using the Judd-Ofelt theory and the Fuchbauer–Ladenburg equation. Theoretical studies of the Ho{sup 3+}-doped chalcogenide glass fiber amplifier operating in the MIR wavelength range, specifically around the 2.86 μm wavelength, were performed based on the rate and light propagation equations. The results indicate that the chalcogenide glass fiber presented a larger signal MIR gain and wider MIR gain spectrum. The maximum signal gain was 36 dB and the gain width was 20 dB.

  8. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  9. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices.

    Science.gov (United States)

    Shpotyuk, M V; Shpotyuk, O I; Cebulski, J; Kozyukhin, S

    2016-12-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)-S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pure agglomerates of metallic nanoparticles. In an excellence according to known experimental data, it is suggested that destructive clustering of nanoparticles is possible in Cu-, Ag-, and Au-ion-implanted dielectric oxide glass media, possessing a strongly negative χ-criterion. Some recent speculations trying to ascribe equally this ability to soft chalcogenide glasses despite an obvious difference in the corresponding bond dissociation energies have been disclosed and criticized as inconclusive.

  10. Precision glass molding of complex shaped chalcogenide glass lenses for IR applications

    Science.gov (United States)

    Staasmeyer, Jan-Helge; Wang, Yang; Liu, Gang; Dambon, Olaf; Klocke, Fritz

    2016-09-01

    The use of chalcogenide glass in the thermal infrared domain is an emerging alternative to commonly used crystalline materials such as germanium. The main advantage of chalcogenide glass is the possibility of mass production of complex shaped geometries with replicative processes such as precision glass molding. Thus costly single point diamond turning processes are shifted to mold manufacturing and do not have to be applied to every single lens produced. The usage of FEM-Simulation is mandatory for developing a molding process for complex e.g. non rotational symmetric chalcogenide glass lenses in order to predict the flow of glass. This talk will present state of the art modelling of the precision glass molding process for chalcogenide glass lenses, based on thermal- and mechanical models. Input data for modelling are a set of material properties of the specific chalcogenide glass in conjunction with properties of mold material and wear protective coatings. Specific properties for the mold-glass interaction such as stress relaxation or friction at the glassmold interface cannot be obtained from datasheets and must be determined experimentally. A qualified model is a powerful tool to optimize mold and preform designs in advance in order to achieve sufficient mold filling and compensate for glass shrinkage. Application of these models in an FEM-Simulation "case study" for molding a complex shaped non-rotational symmetric lens is shown. The outlook will examine relevant issues for modelling the precision glass molding process of chalcogenide glasses in order to realize scaled up production in terms of multi cavity- and wafer level molding.

  11. Rings, chains and planes: Variation of g with composition in chalcogenide glasses

    Indian Academy of Sciences (India)

    P K Thiruvikraman

    2006-08-01

    We propose a microscopic, phenomenological model for the decrease in the viscosity observed at glass transition. Our model is primarily applicable to chalcogenide glasses. According to this model, the decrease in the viscosity at glass transition is mainly due to the breaking of the Van der Waals bonds in the chalcogenides. Using this model, we derive a relationship between the glass transition temperature, g, and the molar volume m. The validity of this relation is checked using experimental data available in the literature for two binary systems (Ge–Se and As–S) and a pseudo-binary system (As40SeTe60–).

  12. An overview of the Fe-chalcogenide superconductors

    Science.gov (United States)

    Wu, M. K.; Wu, P. M.; Wen, Y. C.; Wang, M. J.; Lin, P. H.; Lee, W. C.; Chen, T. K.; Chang, C. C.

    2015-08-01

    This review intends to summarize recent advancements in FeSe and related systems. The FeSe and related superconductors are currently receiving considerable attention for the high critical temperature (T C) observed and for many similar features to the high T C cuprate superconductors. These similarities suggest that understanding the FeSe-based compounds could potentially help our understanding of the cuprates. We begin the review by presenting common features observed in the FeSe- and FeAs-based systems. Then we discuss the importance of careful control of the material preparation allowing for a systematic structure characterization. With this control, numerous rich phases have been observed. Importantly, we suggest that the Fe-vacancy ordered phases found in the FeSe-based compounds, which are non-superconducting magnetic Mott insulators, are the parent compounds of the superconductors. Superconductivity can emerge from the parent phases by disordering the Fe vacancy order, often by a simple annealing treatment. Then we review physical properties of the Fe chalcogenides, specifically the optical properties and angle-resolved photoemission spectroscopy (ARPES) results. From the literature, strong evidence points to the existence of orbital modification accompanied by a gap-opening, prior to the structural phase transition, which is closely related to the occurrence of superconductivity. Furthermore, strong lattice to spin coupling are important for the occurrence of superconductivity in FeSe. Therefore, it is believed that the iron selenides and related compounds will provide essential information to understand the origin of superconductivity in the iron-based superconductors, and possibly the superconducting cuprates.

  13. Static Behavior of Chalcogenide Based Programmable Metallization Cells

    Science.gov (United States)

    Rajabi, Saba

    Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities. The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior. The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of

  14. Tolerant chalcogenide cathodes of membraneless micro fuel cells.

    Science.gov (United States)

    Gago, Aldo Saul; Gochi-Ponce, Yadira; Feng, Yong-Jun; Esquivel, Juan Pablo; Sabaté, Neus; Santander, Joaquin; Alonso-Vante, Nicolas

    2012-08-01

    The most critical issues to overcome in micro direct methanol fuel cells (μDMFCs) are the lack of tolerance of the platinum cathode and fuel crossover through the polymer membrane. Thus, two novel tolerant cathodes of a membraneless microlaminar-flow fuel cell (μLFFC), Pt(x)S(y) and CoSe(2), were developed. The multichannel structure of the system was microfabricated in SU-8 polymer. A commercial platinum cathode served for comparison. When using 5 M CH(3)OH as the fuel, maximum power densities of 6.5, 4, and 0.23 mW cm(-2) were achieved for the μLFFC with Pt, Pt(x)S(y), and CoSe(2) cathodes, respectively. The Pt(x)S(y) cathode outperformed Pt in the same fuel cell when using CH(3)OH at concentrations above 10 M. In a situation where fuel crossover is 100 %, that is, mixing the fuel with the reactant, the maximum power density of the micro fuel cell with Pt decreased by 80 %. However, for Pt(x)S(y) this decrease corresponded to 35 % and for CoSe(2) there was no change in performance. This result is the consequence of the high tolerance of the chalcogenide-based cathodes. When using 10 M HCOOH and a palladium-based anode, the μLFFC with a CoSe(2) cathode achieved a maxiumum power density of 1.04 mW cm(-2). This micro fuel cell does not contain either Nafion membrane or platinum. We report, for the first time, the evaluation of Pt(x)S(y)- and CoSe(2)-based cathodes in membraneless micro fuel cells. The results suggest the development of a novel system that is not size restricted and its operation is mainly based on the selectivity of its electrodes.

  15. Localized rapid heating process for precision chalcogenide glass molding

    Science.gov (United States)

    Li, Hui; He, Peng; Yu, Jianfeng; Lee, L. James; Yi, Allen Y.

    2015-10-01

    Precision glass molding is an important process for high volume optical fabrication. However, conventional glass molding is a bulk heating process that usually requires a long thermal cycle, where molding assembly and other mechanical parts are heated and cooled together. This often causes low efficiency and other heating and cooling related problems, such as large thermal expansion in both the molds and molded optics. To cope with this issue, we developed a localized rapid heating process to effectively heat only very small part of the glass. This localized rapid heating study utilized a fused silica wafer coated with a thin graphene layer to heat only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating heat on and near the coating. The feasibility of this process was validated by both experiments and numerical simulation. To demonstrate the advantages of the localized rapid heating, both localized rapid heating process and bulk heating process were performed and carefully compared. The uniformity and quality of the molded sample by localized rapid heating process was also demonstrated. In summary, localized rapid heating process by using graphene coated fused silica wafer was characterized and can be readily implemented in replication of micro scale chalcogenide glasses. A fused silica wafer coated with a thin graphene layer was utilized for localized rapid heating only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating high temperature on and near the coating. This process is fast and efficient since only interested areas are heated without affecting the entire glass substrate or the mold assembly. The uniformity and quality of the molded sample by localized rapid heating process was demonstrated by comparing both localized rapid heating

  16. THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Markos, Christos; Nielsen, Kristian;

    2014-01-01

    In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

  17. Bandgap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides.

    Science.gov (United States)

    Niu, Shanyuan; Huyan, Huaixun; Liu, Yang; Yeung, Matthew; Ye, Kevin; Blankemeier, Louis; Orvis, Thomas; Sarkar, Debarghya; Singh, David J; Kapadia, Rehan; Ravichandran, Jayakanth

    2017-03-01

    Transition metal perovskite chalcogenides are a new class of versatile semiconductors with high absorption coefficient and luminescence efficiency. Polycrystalline materials synthesized by an iodine-catalyzed solid-state reaction show distinctive optical colors and tunable bandgaps across the visible range in photoluminescence, with one of the materials' external efficiency approaching the level of single-crystal InP and CdSe.

  18. Native metastability in chalcogenide glasses described within configuration-coordinate model

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M [Institute of Materials of Scientific Research Company ' Carat' , 202, Stryjska str., Lviv (Ukraine); Vakiv, M [Institute of Materials of Scientific Research Company ' Carat' , 202, Stryjska str., Lviv (Ukraine)

    2007-08-15

    It was created configuration-coordinate model for describing of native metastability in chalcogenide glasses. It was shown that potential should be at least triple-well. System of differential equations for describing transitions between the atomic states was made and solved within present configuration-coordinate model.

  19. Driving Oxygen Coordinated Ligand Exchange at Nanocrystal Surfaces using Trialkylsilylated Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Caldwell, Marissa A.; Albers, Aaron E.; Levy, Seth C.; Pick, Teresa E.; Cohen, Bruce E.; Helms, Brett A.; Milliron, Delia J.

    2010-11-11

    A general, efficient method is demonstrated for exchanging native oxyanionic ligands on inorganic nanocrystals with functional trimethylsilylated (TMS) chalcogenido ligands. In addition, newly synthesized TMS mixed chalcogenides leverage preferential reactivity of TMS-S bonds over TMS-O bonds, enabling efficient transfer of luminescent nanocrystals into aqueous media with retention of their optical properties.

  20. Small core Chalcogenide photonic crystal fiber for midinfrared wavelength conversion: experiment and design

    OpenAIRE

    Xing, Sida; Grassani, Davide; Kharitonov, Svyatoslav; Billat, Adrien; Brès, Camille-Sophie

    2016-01-01

    Kerr index and dispersion parameter of a small core chalcogenide photonic crystal fiber are estimated via four-wave mixing near 2μm. From these values, new fiber design is proposed to efficiently generate idlers in mid-infrared.

  1. Origin of the frequency shift of Raman scattering in chalcogenide glasses

    DEFF Research Database (Denmark)

    Han, X.C.; Tao, H.Z.; Gong, L.J.;

    2014-01-01

    Raman scattering is a sensitive method for probing the structural evolution in glasses, especially in covalent ones. Usually the main Raman scattering frequency shifts with composition for Gesingle bondSe chalcogenide glasses. However, it has not been well established whether and how the dependen...

  2. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

    Directory of Open Access Journals (Sweden)

    Fei Zhuge

    2015-05-01

    Full Text Available It has been reported that in chalcogenide-based electrochemical metallization (ECM memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S, the metal filament grows from the cathode (e.g., Pt and W towards the anode (e.g., Cu and Ag, whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2. The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

  3. High Average Power Mid-infrared Supercontinuum Generation in a Suspended Core Chalcogenide Fiber

    DEFF Research Database (Denmark)

    Møller, Uffe Visbech; Yu, Yi; Petersen, Christian Rosenberg;

    2014-01-01

    Mid-infrared supercontinuum spanning from 2.0 to 6.1 μm is generated in a 9 cm suspended core chalcogenide fiber by pumping close to the fiber zero-dispersion wavelength at 3.5 μm with an OPA system...

  4. Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

    Science.gov (United States)

    Nessel, James; Miranda, Felix

    2013-01-01

    A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

  5. Laser annealing and defect study of chalcogenide photovoltaic materials

    Science.gov (United States)

    Bhatia, Ashish

    Cu(In,Ga)Se2 (CIGSe), CuZnSn(S,Se)4(CZTSSe), etc., are the potential chalcogenide semiconductors being investigated for next-generation thin film photovoltaics (TFPV). While the champion cell efficiency of CIGSe has exceeded 20%, CZTSSe has crossed the 10% mark. This work investigates the effect of laser annealing on CISe films, and compares the electrical characteristics of CIGSe (chalcopyrite) and CZTSe (kesterite) solar cells. Chapter 1 through 3 provide a background on semiconductors and TFPV, properties of chalcopyrite and kesterite materials, and their characterization using deep level transient spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). Chapter 4 investigates electrochemical deposition (nonvacuum synthesis) of CISe followed by continuous wave laser annealing (CWLA) using a 1064 nm laser. It is found that CWLA at ≈ 50 W/cm2 results in structural changes without melting and dewetting of the films. While Cu-poor samples show about 40% reduction in the full width at half maximum of the respective x-ray diffraction peaks, identically treated Cu-rich samples register more than 80% reduction. This study demonstrates that an entirely solid-phase laser annealing path exists for chalcopyrite phase formation and crystallization. Chapter 5 investigates the changes in defect populations after pulse laser annealing in submelting regime of electrochemically deposited and furnace annealed CISe films. DLTS on Schottky diodes reveal that the ionization energy of the dominant majority carrier defect state changes nonmonotonically from 215+/-10 meV for the reference sample, to 330+/-10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215+/-10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. Chapter 6 compares the electrical characteristics of chalcopyrite and kesterite materials. Experiments reveal CZTSe cell has an

  6. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.

    Science.gov (United States)

    Heine, Thomas

    2015-01-20

    CONSPECTUS: After the discovery of graphene and the development of powerful exfoliation techniques, experimental preparation of two-dimensional (2D) crystals can be expected for any layered material that is known to chemistry. Besides graphene and hexagonal boron nitride (h-BN), transition metal chalcogenides (TMC) are among the most studied ultrathin materials. In particular, single-layer MoS2, a direct band gap semiconductor with ∼1.9 eV energy gap, is popular in physics and nanoelectronics, because it nicely complements semimetallic graphene and insulating h-BN monolayer as a construction component for flexible 2D electronics and because it was already successfully applied in the laboratory as basis material for transistors and other electronic and optoelectronic devices. Two-dimensional crystals are subject to significant quantum confinement: compared with their parent layered 3D material, they show different structural, electronic, and optical properties, such as spontaneous rippling as free-standing monolayer, significant changes of the electronic band structure, giant spin-orbit splitting, and enhanced photoluminescence. Most of those properties are intrinsic for the monolayer and already absent for two-layer stacks of the same 2D crystal. For example, single-layer MoS2 is a direct band gap semiconductor with spin-orbit splitting of 150 meV in the valence band, while the bilayer of the same material is an indirect band gap semiconductor without observable spin-orbit splitting. All these properties have been observed experimentally and are in excellent agreement with calculations based on density-functional theory. This Account reports theoretical studies of a subgroup of transition metal dichalcogenides with the composition MX2, with M = Mo, or W and X = Se or S, also referred to as "MoWSeS materials". Results on the electronic structure, quantum confinement, spin-orbit coupling, spontaneous monolayer rippling, and change of electronic properties in the

  7. A comprehensive review of the application of chalcogenide nanoparticles in polymer solar cells.

    Science.gov (United States)

    Freitas, Jilian N; Gonçalves, Agnaldo S; Nogueira, Ana F

    2014-06-21

    In this review the use of solution-processed chalcogenide quantum dots (CdS, CdSe, PbS, etc.) in hybrid organic-inorganic solar cells is explored. Such devices are known as potential candidates for low-cost and efficient solar energy conversion, and compose the so-called third generation solar cells. The incorporation of oxides and metal nanoparticles has also been successfully achieved in this new class of photovoltaic devices; however, we choose to explore here chalcogenide quantum dots in light of their particularly attractive optical and electronic properties. We address herein a comprehensive review of the historical background and state-of-the-art comprising the incorporation of such nanoparticles in polymer matrices. Later strategies for surface chemistry manipulation, in situ synthesis of nanoparticles, use of continuous 3D nanoparticles network (aerogels) and ternary systems are also reviewed.

  8. Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

    Directory of Open Access Journals (Sweden)

    Elnaggar A.M.

    2016-12-01

    Full Text Available It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes during the laser treatment. Nanocrystallites of CuInS2 and CuZnSnS4 (CZTS were used as chalcogenide materials. The optimization of the laser beam intensities and nanoparticle sizes were explored.

  9. Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland); Ingram, A. [Opole University of Technology, 75 Ozimska Str., Opole 45370 (Poland); Shpotyuk, M. [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv 79013 (Ukraine); Filipecki, J. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland)

    2014-11-01

    Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ{sub 2}-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

  10. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    Energy Technology Data Exchange (ETDEWEB)

    Aminorroaya Yamini, Sima, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu; Dou, Shi Xue [Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Mitchell, David R. G. [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Wang, Heng [Materials Science, California Institute of Technology, Pasadena, CA 91125 (United States); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125 (United States); Pei, Yanzhong [School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804 (China); Snyder, G. Jeffrey, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); ITMO University, Saint Petersburg (Russian Federation)

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  11. Enhancing extraction efficiency of mid-infrared fluorescence in chalcogenide glass via photonic crystal

    Science.gov (United States)

    Zhang, Jun; Zhang, Peiqing; Ma, Beijiao; Dai, Shixun; Zhang, Wei; Nie, Qiuhua

    2016-04-01

    The use of rare earth-doped chalcogenide glass is an attractive method to develop mid-infrared sources. In this work, Er3+-doped chalcogenide glass is prepared, and photonic crystal (PC) pattern is designed to improve the extraction efficiency of light emission from the sample surface. The finite difference time domain simulation shows that the light extraction efficiency from the sample surface can be 1.62 times stronger than that from the sample without PC structure by introducing a simple two-dimensional (2D) PC structure into glass samples. This improvement was the result of the efficient light diffraction on the surface because of the integrated 2D PC. Results in this work offer a potential in developing midinfrared light sources.

  12. Low-power Mid-IR Supercontinuum and Rogue Wave Generation in Chalcogenide Waveguides

    CERN Document Server

    Hernandez, Santiago M; Bonetti, Juan; Grosz, Diego F

    2016-01-01

    We present numerical results of supercontinuum (SC) generation in the mid-IR spectral region, specifically addressing the molecular fingerprint window ranging from 2.5 to 25 um. By solving the Generalized Nonlinear Schr\\"odinger Equation (GNLSE) in a chalcogenide waveguide, we demonstrate low-power SC generation beyond 10 um from a pump at 5 um. Further, we investigate the short-pulse and CW regimes, and show that a simple linear dispersion profile, applicable to a broad range of chalcogenide media, is sufficient to account for the broad SC generation, and yield rich pulse dynamics leading to the frequent occurrence of rogue wave events. Results are encouraging as they point to the feasibility of producing bright and coherent light, by means of single low-power tabletop laser pumping schemes, in a spectral region that finds applications in such diverse areas as molecular spectroscopy, metrology and tomography, among others, and that is not easily addressable with other light sources

  13. A comprehensive review of the application of chalcogenide nanoparticles in polymer solar cells

    Science.gov (United States)

    Freitas, Jilian N.; Gonçalves, Agnaldo S.; Nogueira, Ana F.

    2014-05-01

    In this review the use of solution-processed chalcogenide quantum dots (CdS, CdSe, PbS, etc.) in hybrid organic-inorganic solar cells is explored. Such devices are known as potential candidates for low-cost and efficient solar energy conversion, and compose the so-called third generation solar cells. The incorporation of oxides and metal nanoparticles has also been successfully achieved in this new class of photovoltaic devices; however, we choose to explore here chalcogenide quantum dots in light of their particularly attractive optical and electronic properties. We address herein a comprehensive review of the historical background and state-of-the-art comprising the incorporation of such nanoparticles in polymer matrices. Later strategies for surface chemistry manipulation, in situ synthesis of nanoparticles, use of continuous 3D nanoparticles network (aerogels) and ternary systems are also reviewed.

  14. Trends in oxygen reduction and methanol activation on transition metal chalcogenides

    DEFF Research Database (Denmark)

    Tritsaris, Georgios; Nørskov, Jens Kehlet; Rossmeisl, Jan

    2011-01-01

    We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability...... of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated....

  15. Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

    OpenAIRE

    Elnaggar A.M.; Albassam A.; Oźga K.; Jędryka J.; Szota M.; Myronchuk G.

    2016-01-01

    It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes ...

  16. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices

    OpenAIRE

    Xiaoming Yu; John Robertson

    2016-01-01

    GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density fu...

  17. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices.

    OpenAIRE

    Yu, X.; Robertson, J

    2016-01-01

    GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density fu...

  18. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

    1997-12-31

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

  19. Radiation-induced effects in chalcogenide glasses: Topological mechanisms and application

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I. E-mail: karat@ipm.lviv.ua

    2000-05-02

    Structural transformations in vitreous As{sub 2}S{sub 3}-based chalcogenide semiconducting glasses induced by {gamma}-irradiation have been considered on the basis of IR Fourier spectroscopy results as destruction-polymerization changes of the covalent chemical bonds, associated with specific coordination defects formation. The whole variety of these processes has been taken into account in order to construct the physically real variants of the radiation-induced structural changes.

  20. Positron lifetime study of native vacancy-like defects in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Filipecki, J.; Shpotyuk, O.I. E-mail: shpotyuk@novas.lviv.ua; Kozdras, A.; Kovalskiy, A.P

    2003-11-01

    Modified model for positron annihilation in vitreous chalcogenide semiconductors is developed to explain a number of previously obtained results on positron lifetime measurements in glassy As-Ge-S of stoichiometric As{sub 2}S{sub 3}-GeS{sub 2} and non-stoichiometric As{sub 2}S{sub 3}-Ge{sub 2}S{sub 3} cut-sections.

  1. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    Science.gov (United States)

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  2. Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

    2015-05-15

    Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

  3. Generation of correlated photon pairs in a chalcogenide As2S3 waveguide

    CERN Document Server

    Xiong, C; Peruzzo, A; Lobino, M; Clark, A S; Choi, D -Y; Madden, S J; Natarajan, C M; Tanner, M G; Hadfield, R H; Dorenbos, S N; Zijlstra, T; Zwiller, V; Thompson, M G; Rarity, J G; Steel, M J; Luther-Davies, B; Eggleton, B J; O'Brien, J L

    2010-01-01

    We demonstrate the first 1550 nm correlated photon-pair source in an integrated glass platform-a chalcogenide As2S3 waveguide. A measured pair coincidence rate of 80 per second was achieved using 57 mW of continuous-wave pump. The coincidence to accidental ratio was shown to be limited by spontaneous Raman scattering effects that are expected to be mitigated by using a pulsed pump source.

  4. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  5. ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

    Energy Technology Data Exchange (ETDEWEB)

    Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2014-12-15

    Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

  6. High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

    Energy Technology Data Exchange (ETDEWEB)

    Bernacki, Bruce E.

    2012-10-05

    This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

  7. Efficient and broadband optical parametric four wave mixing in chalcogenide-PMMA hybrid microwires

    CERN Document Server

    Ahmad, Raja

    2012-01-01

    The recent development of devices based on novel nonlinear materials like chalcogenides (ChGs), silicon (Si) and other semi-conductors has revolutionized the field of nonlinear photonics [1,2,3]. Among the nonlinear effects observed in these materials, four-wave mixing (FWM) is the process that finds the most applications including wavelength conversion [4], optical regeneration [5,6], optical delay [7], time-domain demultiplexing[8], temporal cloaking[9] and negative refraction[10]. Although FWM has been observed in several media including chalcogenides [11,12,13,14], silicon[15, 16], bismuth [17] and silica [18,19], there is a continued quest for devices that realize efficient and broadband FWM while offering compactness, low-power consumption and compatibility with optical fibers. Here, we demonstrate the fabrication of 10 cm long polymer cladded chalcogenide (As2Se3) microwires to realize FWM-led sub watt threshold (70-370 mW) wavelength conversion with a 12 dB bandwidth as broad as 190 nm, and conversion...

  8. Template-directed assembly of metal-chalcogenide nanocrystals into ordered mesoporous networks.

    Energy Technology Data Exchange (ETDEWEB)

    Vamvasakis, Ioannis; Subrahmanyam, Kota S.; Kanatzidis, Mercouri G.; Armatas, Gerasimos S.

    2015-04-01

    Although great progress in the synthesis of porous networks of metal and metal oxide nanoparticles with highly accessible pore surface and ordered mesoscale pores has been achieved, synthesis of assembled 3D mesostructures of metal-chalcogenide nanocrystals is still challenging. In this work we demonstrate that ordered mesoporous networks, which comprise well-defined interconnected metal sulfide nanocrystals, can be prepared through a polymer-templated oxidative polymerization process. The resulting self-assembled mesostructures that were obtained after solvent extraction of the polymer template impart the unique combination of light-emitting metal chalcogenide nanocrystals, three-dimensional open-pore structure, high surface area, and uniform pores. We show that the pore surface of these materials is active and accessible to incoming molecules, exhibiting high photocatalytic activity and stability, for instance, in oxidation of 1-phenylethanol into acetophenone. We demonstrate through appropriate selection of the synthetic components that this method is general to prepare ordered mesoporous materials from metal chalcogenide nanocrystals with various sizes and compositions.

  9. Inorganic Thin-film Sensor Membranes with PLD-prepared Chalcogenide Glasses: Challenges and Implementation

    Directory of Open Access Journals (Sweden)

    Michael J. Schöning

    2004-10-01

    Full Text Available Abstract: Chalcogenide glasses offer an excellent “challenge” for their use and implementation in sensor arrays due to their good sensor-specific advantages in comparison to their crystalline counterparts. This paper will give an introduction on the preparation of chalcogenide glasses in the thin-film state. First, single microsensors have been prepared with the methods of semiconductor technology. In a next step, three microsensors are implemented onto one single silicon substrate to an “one chip” sensor array. Different ionselective chalcogenide glass membranes (PbSAgIAs2S3, CdSAgIAs2S3, CuAgAsSeTe and TlAgAsIS were prepared by means of the pulsed laser deposition (PLD process. The different sensor membranes and structures have been physically characterized by means of Rutherford backscattering spectrometry, scanning electron microscopy and video microscopy. The electrochemical behavior has been investigated by potentiometric measurements.

  10. Synthesis and characterization of single-source molecular precursors for the preparation of metal chalcogenides

    Indian Academy of Sciences (India)

    Vimal K Jain

    2006-11-01

    Metal chalcogenides constitute an important family of functional materials. Subtle changes in shape, size and phase of these materials result in variations in physical properties (e.g. electronic and optical), which can be exploited for various technological applications. Several strategies have evolved recently for controlling shape, size and phase of these materials. This work discusses design and synthesis of single-source molecular precursors for the preparation of metal chalcogenides both in bulk and nano-size regime. Precursors for palladium chalcogenides, indium sulphides and II-VI materials are presented. Synthesis of a variety of palladium(II)/platinum(II) complexes with internally functionalised chalcogenolate ligands, selenocarboxylates; gallium and indium dithiolate complexes and zinc/cadmium/mercury complexes with N,N'-dimethylaminoalkylselenolate ligands and their characterization by NMR and X-ray crystallography are also discussed. Data on thermal behaviour of a few representative complexes, [Pd(SeCOAr)2(PR3)2], [PdCl(E∩N)(PR3)], [InMe2(S∩S)], [In(S∩S)3] and [M(E(CH2)NMe2)2] (M = Zn, Cd, Hg; = 2 or 3) are presented.

  11. Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

    Science.gov (United States)

    Li, Chao-Ran; Dai, Shi-Xun; Zhang, Qing-Yuan; Shen, Xiang; Wang, Xun-Si; Zhang, Pei-Qing; Lu, Lai-Wei; Wu, Yue-Hao; Lv, She-Qin

    2015-04-01

    We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q (˜ 6×104) laser mode could be obtained from a 75-μm diameter microsphere that is coupled with a 1.77-μm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser. Project supported by the National Natural Science Foundation of China (Grant Nos. 61177087 and 61435009), the National Key Basic Research Program of China (Grant No. 2012CB722703), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B21007) , the K. C. Wong Magna Fund in Ningbo University, the Open Fund of the State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), China (Grant No. 2014-skllmd-01), and the Natural Science Foundation of Ningbo City, China (Grant No. 2014A610125).

  12. Mixed-metal chalcogenide tetrahedral clusters with an exo-polyhedral metal fragment.

    Science.gov (United States)

    Yuvaraj, K; Roy, Dipak Kumar; Anju, V P; Mondal, Bijnaneswar; Varghese, Babu; Ghosh, Sundargopal

    2014-12-07

    The reaction of metal carbonyl compounds with group 6 and 8 metallaboranes led us to report the synthesis and structural characterization of several novel mixed-metal chalcogenide tetrahedral clusters. Thermolysis of arachno-[(Cp*RuCO)2B2H6], 1, and [Os3(CO)12] in the presence of 2-methylthiophene yielded [Cp*Ru(CO)2(μ-H){Os3(CO)9}S], 3, and [Cp*Ru(μ-H){Os3(CO)11}], 4. In a similar fashion, the reaction of [(Cp*Mo)2B5H9], 2, with [Ru3(CO)12] and 2-methylthiophene yielded [Cp*Ru(CO)2(μ-H){Ru3(CO)9}S], 5, and conjuncto-[(Cp*Mo)2B5H8(μ-H){Ru3(CO)9}S], 6. Both compounds 3 and 5 can be described as 50-cve (cluster valence electron) mixed-metal chalcogenide clusters, in which a sulfur atom replaces one of the vertices of the tetrahedral core. Compounds 3 and 5 possess a [M3S] tetrahedral core, in which the sulfur is attached to an exo-metal fragment, unique in the [M3S] metal chalcogenide tetrahedral arrangements. All the compounds have been characterized by mass spectrometry, IR, and (1)H, (11)B and (13)C NMR spectroscopy in solution, and the solid state structures were unequivocally established by crystallographic analysis of compounds 3, 5 and 6.

  13. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    Science.gov (United States)

    Virk, Naunidh; Yazyev, Oleg V.

    2016-02-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures.

  14. Chemical Control of Plasmons in Metal Chalcogenide and Metal Oxide Nanostructures.

    Science.gov (United States)

    Mattox, Tracy M; Ye, Xingchen; Manthiram, Karthish; Schuck, P James; Alivisatos, A Paul; Urban, Jeffrey J

    2015-10-14

    The field of plasmonics has grown to impact a diverse set of scientific disciplines ranging from quantum optics and photovoltaics to metamaterials and medicine. Plasmonics research has traditionally focused on noble metals; however, any material with a sufficiently high carrier density can support surface plasmon modes. Recently, researchers have made great gains in the synthetic (both intrinsic and extrinsic) control over the morphology and doping of nanoscale oxides, pnictides, sulfides, and selenides. These synthetic advances have, collectively, blossomed into a new, emerging class of plasmonic metal chalcogenides that complement traditional metallic materials. Chalcogenide and oxide nanostructures expand plasmonic properties into new spectral domains and also provide a rich suite of chemical controls available to manipulate plasmons, such as particle doping, shape, and composition. New opportunities in plasmonic chalcogenide nanomaterials are highlighted in this article, showing how they may be used to fundamentally tune the interaction and localization of electromagnetic fields on semiconductor surfaces in a way that enables new horizons in basic research and energy-relevant applications.

  15. Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

    Directory of Open Access Journals (Sweden)

    Yongfeng Tong

    2016-02-01

    Full Text Available This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon–chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon–chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules.

  16. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    Science.gov (United States)

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-01-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2). PMID:26931353

  17. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    Science.gov (United States)

    Virk, Naunidh; Yazyev, Oleg V.

    2016-01-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures. PMID:26847409

  18. Fabrication of an IR hollow-core Bragg fiber based on chalcogenide glass extrusion

    Science.gov (United States)

    Zhu, Minming; Wang, Xunsi; Pan, Zhanghao; Cheng, Ci; Zhu, Qingde; Jiang, Chen; Nie, Qiuhua; Zhang, Peiqing; Wu, Yuehao; Dai, Shixun; Xu, Tiefeng; Tao, Guangming; Zhang, Xianghua

    2015-05-01

    The theoretical analysis and experimental preparation of a hollow-core Bragg fiber based on chalcogenide glasses are demonstrated. The fiber has potential applications in bio-sensing and IR energy transmission. Two chalcogenide glasses with, respectively, high and low refractive indexes are investigated in detail for the fabrication of hollow-core Bragg fibers. The most appropriate structure is selected; this structure is composed of four concentric rings and a center air hole . Its band gap for the Bragg fiber is analyzed by the plane wave method. The chalcogenide glasses Ge15Sb20S58.5I13 and Ge15Sb10Se75 are chosen to extrude the robust multi-material glass preform with a specialized punch and glass container. The glass preform is simultaneously protected with a polyetherimide polymer. The hollow-core Bragg fibers are finally obtained after glass preform extrusion, fiber preform fabrication, and fiber drawing. Results showed that the fiber has a transparency window from 2.5 to 14 μm, including a low-loss transmission window from 10.5 to 12 μm. The location of this low-loss transmission window matches the predicted photonic band gap in the simulation.

  19. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    Science.gov (United States)

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-03-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2).

  20. Novel methanol-tolerant Ir-S/C chalcogenide electrocatalysts for oxygen reduction in DMFC fuel cell

    Institute of Scientific and Technical Information of China (English)

    Jingyu Ma; Desheng Ai; Xiaofeng Xie; Jianwei Guo

    2011-01-01

    Novel methanol-tolerant oxygen-reduction catalysts, iridium-sulphur (Ir-S) chalcogenides with differ ent Ir/S atomic ratios, were synthesized via a precipitation method using H21rCI6 and Na2SO3 as the Ir and S precursors. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the IrxSl-x/C chalcogenide catalysts. Particle size ranging from 2.5 to 2.8 nm though obvious agglomeration was found on carbon support. However, these chalcogenide catalysts showed strong catalytic activity towards the oxygen reduction reaction (ORR) and high methanol tolerance, strongly suggesting these novel catalysts as promising candidates for direct methanol fuel cell (DMFC) cathode applications.

  1. Thin film chemical sensors based on chalcogenide glasses for ''electronic tongue'' application

    Energy Technology Data Exchange (ETDEWEB)

    Mourzina, Yu.; Legin, A.V.; Vlasov, Yu.G. [Sankt-Peterburgskij Univ., St. Petersburg (Russian Federation). Kafedra Khimii; Schoening, M.J. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz]|[Univ. of Applied Sciences Aachen, Juelich (Germany); Schubert, J.; Zander, W.; Lueth, H. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz

    2001-07-01

    A novel thin film preparation method, a pulsed laser deposition (PLD) technique, has been used in the present investigation to realise thin film chalcogenide layers for chemical sensor membranes. This technique is compatible with silicon technology and was aimed at fabrication of primary devices for analytical microsystems for the needs of fast analysis and in-situ measurements. The combination of the new type of the potentiometric thin film sensor array based on chalcogenide glass materials and artificial neural network for the experimental data processing is also presented. (orig.)

  2. Compositional trends of γ-induced optical changes observed in chalcogenide glasses of binary As-S system

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M.; Shpotyuk, O.; Golovchak, Roman; McCloy, John S.; Riley, Brian J.

    2014-01-23

    Compositional trends of γ-induced optical changes in chalcogenide glasses are studied with the binary As-S system. Effects of γ-irradiation and annealing are compared using the changes measured in the fundamental optical absorption edge region. It is shown that annealing near the glass transition temperature leads to bleaching of As-S glasses, while γ-irradiation leads to darkening; both depend on the glass composition and thermal history of the specimens. These results are explained in terms of competitive destruction–polymerization transformations and physical aging occurring in As-S chalcogenide glasses under the influence of γ-irradiation.

  3. A First Step Towards a Microfabricated Thin-Film Sensor Array on the Basis of Chalcogenide Glass Materials

    Directory of Open Access Journals (Sweden)

    Michael J. Schöning

    2002-09-01

    Full Text Available A first step towards a microfabricated potentiometric thin-film sensor array for the simultaneous detection of Pb2+, Cd2+ and Cu2+ has been realized. The sensitive layers used are on the basis of chalcogenide glass materials. These thin-film chalcogenide glass materials that consist of mixtures of Pb-Ag-As-I-S, Cd-Ag-As-I-S or Cu-Ag-As-Se have been prepared by pulsed laser deposition technique. The developed sensor array has been physically characterized by means of scanning electron microscopy and Rutherford backscattering spectrometry. The electrochemical sensor characterization has been performend by potentiometric measurements.

  4. Widely tunable second-harmonic generation in a chalcogenide-tellurite hybrid optical fiber.

    Science.gov (United States)

    Cheng, Tonglei; Gao, Weiqing; Kawashima, Hiroyasu; Deng, Dinghuan; Liao, Meisong; Matsumoto, Morio; Misumi, Takashi; Suzuki, Takenobu; Ohishi, Yasutake

    2014-04-01

    When a chalcogenide-tellurite hybrid optical fiber with a high refractive index difference Δn=0.24 is pumped by an optical parametric oscillator with a pump wavelength from 1700 to 3000 nm, widely tunable second-harmonic generation (SHG) from 850 to 1502 nm is obtained. The observation of SHG is primarily due to the surface nonlinearity polarization at the core-cladding interface and the second-harmonic signal remains stable at the maximal level throughout the laser pulse irradiation.

  5. Theory of Two-Magnon Raman Scattering in Iron Pnictides and Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C. C.

    2011-08-15

    Although the parent iron-based pnictides and chalcogenides are itinerant antiferromagnets, the use of local moment picture to understand their magnetic properties is still widespread. We study magnetic Raman scattering from a local moment perspective for various quantum spin models proposed for this new class of superconductors. These models vary greatly in the level of magnetic frustration and show a vastly different two-magnon Raman response. Light scattering by two-magnon excitations thus provides a robust and independent measure of the underlying spin interactions. In accord with other recent experiments, our results indicate that the amount of magnetic frustration in these systems may be small.

  6. Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators.

    Science.gov (United States)

    Lin, Hongtao; Li, Lan; Zou, Yi; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kozacik, Stephen; Murakowski, Maciej; Prather, Dennis; Lin, Pao T; Singh, Vivek; Agarwal, Anu; Kimerling, Lionel C; Hu, Juejun

    2013-05-01

    We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2×10(5) at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.

  7. Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O, E-mail: shpotyukmy@yahoo.com [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 212, Stryjska str., Lviv, 79031 (Ukraine)

    2011-04-01

    New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As{sub 2}S{sub 3}){sub 100-x}(Sb{sub 2}S{sub 3}){sub x} ChG.

  8. Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

    2007-03-15

    Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Radiation-induced defects formation in Bi-containing vitreous chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

    1997-12-01

    Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

  10. Application of positron annihilation lifetime technique for {gamma}-irradiation stresses study in chalcogenide vitreous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.; Golovchak, R.; Kovalskiy, A. [Scientific Research Company ' ' Carat' ' , Stryjska str. 20279031 Lviv (Ukraine); Filipecki, J.; Hyla, M. [Physics Institute, Pedagogical University, Al. Armii Krajowej 13/1542201 Czestochowa (Poland)

    2002-08-01

    The influence of {gamma}-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and {gamma}-induced open volume defects. It is concluded that after {gamma}-irradiation of investigated materials the {gamma}-induced microvoids based on S{sub 1}{sup -}, As{sub 2}{sup -}, and Ge{sub 3}{sup -} coordination defects play the major role in positron annihilation processes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  11. Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

    2007-04-15

    A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

  12. The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Carey, John J.; Allen, Jeremy P. [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Watson, Graeme W., E-mail: watsong@tcd.ie [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland)

    2014-05-01

    In this study, density functional theory is used to evaluate the electronic structure of the antimony chalcogenide series. Analysis of the electronic density of states and charge density shows that asymmetric density, or ‘lone pairs’, forms on the Sb{sup III} cations in the distorted oxide, sulphide and selenide materials. The asymmetric density progressively weakens down the series, due to the increase in energy of valence p states from O to Te, and is absent for Sb{sub 2}Te{sub 3}. The fundamental and optical band gaps were calculated and Sb{sub 2}O{sub 3}, Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have indirect band gaps, while Sb{sub 2}Te{sub 3} was calculated to have a direct band gap at Γ. The band gaps are also seen to reduce from Sb{sub 2}O{sub 3} to Sb{sub 2}Te{sub 3}. The optical band gap for Sb{sub 2}O{sub 3} makes it a candidate as a transparent conducting oxide, while Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have suitable band gaps for thin film solar cell absorbers. - Graphical abstract: A schematic illustrating the interaction between the Sb{sup III} cations and the chalcogenide anions and the change in their respective energy levels down the series. - Highlights: • The electronic structure of the antimony chalcogenide series is modelled using DFT. • Asymmetric density is present on distorted systems and absent on the symmetric telluride system. • Asymmetric density is formed from the mixing of Sb 5s and anion p states, where the anti-bonding combination is stabilised by the Sb 5p states. • The asymmetric density weakens down the series due to the increase in energy of chalcogenide p states. • The increase in energy of the anion p states reduces the fundamental and optical band gaps.

  13. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method

    Institute of Scientific and Technical Information of China (English)

    LIU Bo; SONG Zhi-Tang; FENG Song-Lin; CHEN Bomy

    2004-01-01

    A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2 Te5 phase change film and the top electrode film is about 600nm (diameter) and the contact area is calculated to be 0.28pm2. The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory. The minimum threshold current of about 0.6mA is obtained.

  14. Broadband terahertz spectroscopy of chalcogenide glass As30Se30Te40

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romonova, Elena A.; Abdel-Moneim, Nabil

    2016-01-01

    Broadband terahertz time domain spectroscopy (THz-TDS) and time resolved terahertz spectroscopy (TRTS) were performed on a 54 μm thick chalcogenide glass (As30Se30Te40) sample using a two-color laser induced air plasma THz system in transmission and reflection configurations, respectively. Two...... absorption modes were observed at 2–3 THz and 5–8 THz. The photo-induced conductivity can be well described by the Drude-Smith conductivity model, which shows significant carrier localization effects. A fast refractive index change was observed 100 fs before the conductivity reached its maximum with two...

  15. Observation of nonlinear thermal optical dynamics in a chalcogenide nanobeam cavity

    CERN Document Server

    Sun, Yue; Choi, Duk-Yong; Sukhorukov, Andrey A

    2016-01-01

    We present a theoretical and experimental analysis of nonlinear thermo-optic effects in suspended chalcogenide glass nanobeam cavities. We measure the power dependent resonance peaks and characterise the dynamic nonlinear thermo-optic response of the cavity under modulated light input. Several distinct nonlinear characteristics are identified, including a modified spectral response containing periodic fringes, a critical wavelength jump and saturated time delay for modulation frequency faster than the thermal characteristic time. We reveal that the coupling to a parasitic Fabry-Perot cavity enables isolated thermal equilibrium states resulting in the discontinuous thermo-optic critical point.

  16. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

    Institute of Scientific and Technical Information of China (English)

    LIU Bo; FENG Gao-Ming; WU Liang-Cai; SONG Zhi-Tang; LIU Qi-Bin; FENG Song-Lin; CHEN Bomy

    2007-01-01

    @@ In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.

  17. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting

    Science.gov (United States)

    Li, Kexue; Liu, Lei; Yu, Peter Y.; Chen, Xiaobo; Shen, D. Z.

    2016-05-01

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

  18. Identification of Abnormal Phase and its Formation Mechanism in Synthesizing Chalcogenide Films

    Science.gov (United States)

    Liu, Kegao; Ji, Nianjing; Xu, Yong; Liu, Hong

    2016-09-01

    Chalcogenide films can be used in thin-film solar cells due to their high photoelectric conversion efficiencies. It was difficult to identify one abnormal phase with high X-ray diffraction (XRD) intensity and preferred orientation in the samples for preparing chalcogenide films by spin-coating and co-reduction on soda-lime glass (Na2OṡCaOṡ6SiO2) substrates. The raw materials and reductant are metal chlorides and hydrazine hydrate respectively. In order to identify this phase, a series of experiments were done under different conditions. The phases of obtained products were analyzed by XRD and the size and morphology were characterized by scanning electron microscope (SEM) and atomic force microscopy (AFM). From the experimental results, first it was proved that the abnormal phase was water-soluble by water immersion experiment, then it was identified as NaCl crystal through XRD, energy dispersive spectrometer (EDS) and SEM. The cubic NaCl crystals have high crystallinity with size lengths of about 0.5-2μm and show a preferred orientation. The reaction mechanism of NaCl crystal was proposed as follows: The NaCl crystal was formed by reaction of Na2O and HCl in a certain experimental conditions.

  19. Crystal symmetry breaking and vacancies in colloidal lead chalcogenide quantum dots

    Science.gov (United States)

    Bertolotti, Federica; Dirin, Dmitry N.; Ibáñez, Maria; Krumeich, Frank; Cervellino, Antonio; Frison, Ruggero; Voznyy, Oleksandr; Sargent, Edward H.; Kovalenko, Maksym V.; Guagliardi, Antonietta; Masciocchi, Norberto

    2016-09-01

    Size and shape tunability and low-cost solution processability make colloidal lead chalcogenide quantum dots (QDs) an emerging class of building blocks for innovative photovoltaic, thermoelectric and optoelectronic devices. Lead chalcogenide QDs are known to crystallize in the rock-salt structure, although with very different atomic order and stoichiometry in the core and surface regions; however, there exists no convincing prior identification of how extreme downsizing and surface-induced ligand effects influence structural distortion. Using forefront X-ray scattering techniques and density functional theory calculations, here we have identified that, at sizes below 8 nm, PbS and PbSe QDs undergo a lattice distortion with displacement of the Pb sublattice, driven by ligand-induced tensile strain. The resulting permanent electric dipoles may have implications on the oriented attachment of these QDs. Evidence is found for a Pb-deficient core and, in the as-synthesized QDs, for a rhombic dodecahedral shape with nonpolar {110} facets. On varying the nature of the surface ligands, differences in lattice strains are found.

  20. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Science.gov (United States)

    Lee, Seung-Yun; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung

    2007-10-01

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  1. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2007-10-31

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  2. Nanostructured metal chalcogenides: synthesis, modification, and applications in energy conversion and storage devices.

    Science.gov (United States)

    Gao, Min-Rui; Xu, Yun-Fei; Jiang, Jun; Yu, Shu-Hong

    2013-04-07

    Advanced energy conversion and storage (ECS) devices (including fuel cells, photoelectrochemical water splitting cells, solar cells, Li-ion batteries and supercapacitors) are expected to play a major role in the development of sustainable technologies that alleviate the energy and environmental challenges we are currently facing. The successful utilization of ECS devices depends critically on synthesizing new nanomaterials with merits of low cost, high efficiency, and outstanding properties. Recent progress has demonstrated that nanostructured metal chalcogenides (MCs) are very promising candidates for efficient ECS systems based on their unique physical and chemical properties, such as conductivity, mechanical and thermal stability and cyclability. In this review, we aim to provide a summary on the liquid-phase synthesis, modifications, and energy-related applications of nanostructured metal chalcogenide (MC) materials. The liquid-phase syntheses of various MC nanomaterials are primarily categorized with the preparation method (mainly 15 kinds of methods). To obtain optimized, enhanced or even new properties, the nanostructured MC materials can be modified by other functional nanomaterials such as carbon-based materials, noble metals, metal oxides, or MCs themselves. Thus, this review will then be focused on the recent strategies used to realize the modifications of MC nanomaterials. After that, the ECS applications of the MC/modified-MC nanomaterials have been systematically summarized based on a great number of successful cases. Moreover, remarks on the challenges and perspectives for future MC research are proposed (403 references).

  3. Structural and electronic properties of high pressure phases of lead chalcogenides

    Science.gov (United States)

    Petersen, John; Scolfaro, Luisa; Myers, Thomas

    2012-10-01

    Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

  4. Random free energy barrier hopping model for ac conduction in chalcogenide glasses

    Science.gov (United States)

    Murti, Ram; Tripathi, S. K.; Goyal, Navdeep; Prakash, Satya

    2016-03-01

    The random free energy barrier hopping model is proposed to explain the ac conductivity (σac) of chalcogenide glasses. The Coulomb correlation is consistently accounted for in the polarizability and defect distribution functions and the relaxation time is augmented to include the overlapping of hopping particle wave functions. It is observed that ac and dc conduction in chalcogenides are due to same mechanism and Meyer-Neldel (MN) rule is the consequence of temperature dependence of hopping barriers. The exponential parameter s is calculated and it is found that s is subjected to sample preparation and measurement conditions and its value can be less than or greater than one. The calculated results for a - Se, As2S3, As2Se3 and As2Te3 are found in close agreement with the experimental data. The bipolaron and single polaron hopping contributions dominates at lower and higher temperatures respectively and in addition to high energy optical phonons, low energy optical and high energy acoustic phonons also contribute to the hopping process. The variations of hopping distance with temperature is also studied. The estimated defect number density and static barrier heights are compared with other existing calculations.

  5. Investigation of Optical Nonlinearities in Bi-Doped Se-Te Chalcogenide Thin Films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-03-01

    The present paper reports the nonlinear optical properties of chalcogenide Se85- x Te15Bi x (0 ≤ x ≤ 5) thin films. The formulation proposed by Boling, Fournier, and Snitzer and Tichy and Ticha has been used to compute the nonlinear refractive index n 2. The two-photon absorption coefficient β 2, and first- and third-order susceptibilities [ χ (1) and χ (3)] are also reported. The nonlinear refractive index n 2 is well correlated with the linear refractive index n and Wemple-DiDomenico (WDD) parameters, in turn depending on the density ρ and molar volume V m of the system. The density of the system is calculated experimentally by using Archimedes' principle. The linear optical parameters, viz. n, WDD parameters, and optical bandgap E g, are measured experimentally using ellipsometric curves obtained by spectrophotometry. The composition-dependent behavior of n 2 is analyzed on the basis of various parameters, viz. density, bond distribution, cohesive energy (CE), and optical bandgap E g, of the system. The variation of n 2 and β 2 with changing bandgap E g is also reported. The values of n 2 and χ (3) of the investigated chalcogenides are compared with those of pure silica, oxide, and other Se-based glasses.

  6. Photonic Bandgap Propagation in All-Solid Chalcogenide Microstructured Optical Fibers

    Directory of Open Access Journals (Sweden)

    Celine Caillaud

    2014-08-01

    Full Text Available An original way to obtain fibers with special chromatic dispersion and single-mode behavior is to consider microstructured optical fibers (MOFs. These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. In this study, the first all-solid all-chalcogenide MOFs exhibiting photonic bandgap transmission have been achieved and optically characterized. The fibers are made of an As38Se62 matrix, with inclusions of Te20As30Se50 glass that shows a higher refractive index (n = 2.9. In those fibers, several transmission bands have been observed in mid infrared depending on the geometry. In addition, for the first time, propagation by photonic bandgap effect in an all-chalcogenide MOF has been observed at 3.39 µm, 9.3 µm, and 10.6 µm. The numerical simulations based on the optogeometric properties of the fibers agree well with the experimental characterizations.

  7. Mid-gap phenomena in chalcogenide glasses and barrier-cluster-heating model

    Energy Technology Data Exchange (ETDEWEB)

    Banik, Ivan, E-mail: ivan.banik@stuba.sk; Kubliha, Marián; Lukovičová, Jozefa; Pavlendová, Gabriela [Faculty of Civil Engineering, Slovak University of Technology, 813 68 Bratislava (Slovakia)

    2015-12-07

    The physical mechanism of photoluminescence spectrum formation of chalcogenide glasses (CHG) belongs to the important unsolved problems in physics of non-crystalline materials. Photoluminescence is an important means of the electron spectrum investigation. PL spectrum in CHG is produced mostly in the middle of the band gap, and its profile is normal - Gaussian. Several features of PL spectra in CHG is still a great mystery. The aim of the paper is to make reader acquainted with the new insight into the problem. In this article we also deal with the issue of clarifying the nature of mid-gap absorption. From the experiments it is known that after excitation of the glass As{sub 2}S{sub 3} (or As{sub 2}Se{sub 3}) with primary radiation from Urbach-tail region the glass will be able to absorb the photons of low energy (IR) radiation from mid-gap region of spectra. This low photon absorption without action of the primary excitation radiation of the higher photon energy is impossible. Mid-gap absorption yields boost in the photoluminescence. The paper gives the reader the new insights into some, until now, unexplained effects and contexts in chalcogenide glasses from the position of barrier-cluster-heating model.

  8. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    Science.gov (United States)

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-11-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1-xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1-xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1-xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1-xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1-xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C-320 °C) on MgO using PLD. This offers a broad scope of various applications.

  9. Thermal and Electrical Conductivity of Ge1Sb4Te7 Chalcogenide Alloy

    Science.gov (United States)

    Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

    2017-02-01

    The unique properties of the Ge1Sb4Te7 alloy as a chalcogenide make it a good candidate for application in phase-change random access memory as well as thermoelectric materials. The thermal and electrical conductivity of the Ge1Sb4Te7 alloy play an important role in both applications. This work aims to determine the thermal conductivity and electrical resistivity of the Ge1Sb4Te7 alloy as a function of temperature and to discuss the thermal conduction mechanism. Thermal conductivity and electrical resistivity were measured from room temperature to 778 K using the hot strip method and the four-terminal method, respectively. The thermal conductivity of the Ge1Sb4Te7 alloy shows an interesting temperature dependence: it decreases up to about 600 K, and then increases with increasing temperature. The electrical resistivity shows a monotonic increase with increasing temperature. Through a discussion of the thermal conductivity results together with electrical resistivity results, it is proposed that electronic thermal conductivity dominates the thermal conductivity, while the bipolar diffusion contributes to the increase in the thermal conductivity at higher temperatures. The resonance bonding existing in this chalcogenide alloy accounts for the low lattice thermal conductivity.

  10. Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

    Science.gov (United States)

    Simonds, Brian J.; Meadows, Helene J.; Misra, Sudhajit; Ferekides, Christos; Dale, Phillip J.; Scarpulla, Michael A.

    2015-01-01

    We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and Cu(In,Ga)S] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with Cu(In,Ga)S to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuous-wave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed.

  11. Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

    Science.gov (United States)

    Chen, Yubin; Feng, Xiaoyang; Liu, Maochang; Su, Jinzhan; Shen, Shaohua

    2016-09-01

    Photoelectrochemical (PEC) water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, Ga)Se2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

  12. High-Performance, High-Index-Contrast Chalcogenide Glass Photonics on Silicon and Unconventional Non-planar Substrates

    CERN Document Server

    Zou, Yi; Lin, Hongtao; Li, Lan; Moreel, Loise; Zhou, Jie; Du, Qingyang; Ogbuu, Okechukwu; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Dobson, Kevin D; Birkmire, Robert; Hu, Juejun

    2013-01-01

    This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-index-contrast photonic structures on both silicon and plastic substrates. The fabrication technique combines low-temperature chalcogenide glass film deposition and resist-free single-step thermal nanoimprint to process low-loss (1.6 dB/cm), sub-micron single-mode waveguides with a smooth surface finish using simple contact photolithography. Using this approach, the first chalcogenide glass micro-ring resonators are fabricated by thermal nanoimprint. The devices exhibit an ultra-high quality-factor of 400,000 near 1550 nm wavelength, which represents the highest value reported in chalcogenide glass micro-ring resonators. Furthermore, sub-micron nanoimprint of chalcogenide glass films on non-planar plastic substrates is demonstrated, which establishes the method as a facile route for monolithic fabrication of high-index-contrast devices on a wide array of unconventional substrates.

  13. Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

    Directory of Open Access Journals (Sweden)

    Chen Yubin

    2016-09-01

    Full Text Available Photoelectrochemical (PEC water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, GaSe2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

  14. Application of photo-doping phenomenon in amorphous chalcogenide GeS2 film to optical device

    Science.gov (United States)

    Murakami, Yoshihisa; Arai, Katsuya; Wakaki, Moriaki; Shibuya, Takehisa; Shintaku, Toshihiro

    2015-03-01

    Photodoping phenomenon is observed when a double-layer consisting of an amorphous chalcogenide film (As2S3, GeS2, GeSe2 etc.) and a metal (Ag, Cu etc.) film is illuminated by light. The metal diffuses abnormally into the amorphous chalcogenide layer. Amorphous chalcogenide films of GeS2 with an Ag over layer exhibited large increase of refractive index through the abnormal doping of Ag by irradiating the light around the absorption edge of the GeS2 chalcogenide. In this study, we aimed the application of this effect for the fabrication of optical devices and fabricated various micro doped patterns by using a laser beam. Mask less pattering with refractive index modified films are possible by manipulating the scanning of the laser beam. Micro gratings were fabricated using a confocal laser microscope to work as both fabrication and observation system. Waveguides were also fabricated by scanning the laser beam for photodoping. Holographic gratings were fabricated by utilizing the photodoping of the two beam interference pattern, which showed the possibility to produce large scale optical devices or mass production.

  15. Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

    Science.gov (United States)

    Nolas, George S.; Hassan, M. Shafiq; Dong, Yongkwan; Martin, Joshua

    2016-10-01

    Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn2InTe4 and CuCd2InTe4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn2InSe4. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

  16. Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

    KAUST Repository

    San-Román-Alerigi, Damián P.

    2013-01-01

    In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

  17. Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

    Directory of Open Access Journals (Sweden)

    P. Bia

    2012-01-01

    Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

  18. Ultrabroadband, Midinfrared Supercontinuum Generation in Dispersion Engineered As2Se3-Based Chalcogenide Photonic Crystal Fibers

    Directory of Open Access Journals (Sweden)

    Rim Cherif

    2013-01-01

    Full Text Available Small core As2Se3-based photonic crystal fibers (PCFs are accurately characterized for compact, high power, ultrabroadband, and coherent supercontinuum generation within few millimeters fiber length. Bandwidths of ~5.3 μm, 5 μm, and 3.2 μm were calculated for hole-to-hole spacings Λ= 3.5 μm, 4.5 μm, and 5.5 μm, respectively. The spectral broadening in the chalcogenide PCF is mainly caused by self-phase modulation and Raman-induced soliton self-frequency shift. The results show that small core As2Se3 PCFs are a promising candidate for mid-IR SCG up to ~8 μm.

  19. Organic phase synthesis of noble metal-zinc chalcogenide core-shell nanostructures.

    Science.gov (United States)

    Kumar, Prashant; Diab, Mahmud; Flomin, Kobi; Rukenstein, Pazit; Mokari, Taleb

    2016-10-15

    Multi-component nanostructures have been attracting tremendous attention due to their ability to form novel materials with unique chemical, optical and physical properties. Development of hybrid nanostructures that are composed of metal-semiconductor components using a simple approach is of interest. Herein, we report a robust and general organic phase synthesis of metal (Au or Ag)-Zinc chalcogenide (ZnS or ZnSe) core-shell nanostructures. This synthetic protocol also enabled the growth of more compositionally complex nanostructures of Au-ZnSxSe1-x alloys and Au-ZnS-ZnSe core-shell-shell. The optical and structural properties of these hybrid nanostructures are also presented.

  20. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices

    Science.gov (United States)

    Yu, Xiaoming; Robertson, John

    2016-11-01

    GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density functional calculations are used to describe the stability of various types of intra-layer disorder, how the block heights can vary by means of SbTe-based stacking faults and using a vacancy-mediated kink motion, and also to understand the nature of the switching process in more chemically disordered CSLs.

  1. Modeling of switching mechanism in GeSbTe chalcogenide superlattices

    Science.gov (United States)

    Yu, Xiaoming; Robertson, John

    2015-07-01

    We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov state. Model 2 proposes a switch between Petrov and Inverted Petrov states. For each case, we note that the main transition is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motion of GeTe sublayer to the final, low energy structure. Through calculating energy barriers, the rate-determining step is the displacive transition.

  2. Chalcogenide glass planar MIR couplers for future chip based Bracewell interferometers

    CERN Document Server

    Goldsmith, Harry-Dean Kenchington; Ireland, Michael; Ma, Pan; Tuthill, Peter; Eggleton, Ben; Lawrence, John S; Debbarma, Sukanta; Luther-Davies, Barry; Madden, Stephen J

    2016-01-01

    Photonic integrated circuits are established as the technique of choice for a number of astronomical processing functions due to their compactness, high level of integration, low losses, and stability. Temperature control, mechanical vibration and acoustic noise become controllable for such a device enabling much more complex processing than can realistically be considered with bulk optics. To date the benefits have mainly been at wavelengths around 1550 nm but in the important Mid-Infrared region, standard photonic chips absorb light strongly. Chalcogenide glasses are well known for their transparency to beyond 10000 nm, and the first results from coupler devices intended for use in an interferometric nuller for exoplanetary observation in the Mid-Infrared L band (3800-4200 nm) are presented here showing that suitable performance can be obtained both theoretically and experimentally for the first fabricated devices operating at 4000 nm.

  3. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  4. Ultra-large Mode Area Microstructured Core Chalcogenide Fiber Design for Mid-IR Beam Delivery

    CERN Document Server

    Barh, Ajanta; Varshney, R K; Pal, Bishnu P

    2013-01-01

    An all solid large modearea (LMA) chalcogenide based microstructured core optical fiber (MCOF) is designed and proposed for high power handling in the mid IR spectral regime, covering the entire second transparency window of the atmosphere (3 to 5 microns). The core of the proposed specialty fiber is composed of a few rings of high index rods arranged in a pattern of hexagon. Dependence of effective mode area on the pitch and radius of high index rods are studied. Ultra high effective mode area up to 75000 micron square can be achieved over this specific wavelength range while retaining its single mode characteristic. A negligible confinement loss along with a low dispersion slope (near 0.03 ps/km-nm square) and a good beam quality factor (M2 1.17) should make this LMA fiber design attractive for fabrication as a potential candidate suitable for high power, passive applications at the mid IR wavelength regime.

  5. Mid-infrared supercontinuum generation in tapered As2S3 chalcogenide planar waveguide

    Science.gov (United States)

    Zhang, Xiang; Hu, Hongyu; Li, Wenbo; Dutta, Niloy K.

    2016-10-01

    We numerically demonstrate mid-infrared supercontinuum generation in a non-uniformly tapered chalcogenide planar waveguide. This planar rib waveguide of As2S3 glass on MgF2 is 2 cm long with increasing etch depth longitudinally to manage the total dispersion. This waveguide has zero dispersion at two wavelengths. The dispersion profile varies along the propagation distance, leading to continuous modification of the phase-matching condition for dispersive wave emission and enhancement of energy transfer efficiency between solitons and dispersive waves. Numerical simulations are conducted for secant input pulses at a wavelength of 1.55 μm with a width of 50 fs and peak power of 2 kW. Results show this proposed scheme significantly broadens the generated continuum, extending from ~1 to ~7 μm.

  6. Properties of molten Ge chalcogenides an ab initio molecular dynamics study

    CERN Document Server

    Raty, J Y; Bichara, C

    2003-01-01

    In this study, we perform first-principles molecular dynamics simulations of the eutectic alloy Ge sub 1 sub 5 Te sub 8 sub 5 at five different densities and temperatures. We obtain structures in agreement with the available diffraction data and obtain a new view of the molten Ge chalcogenides. We show that the anomalous volume contraction observed in the liquid 30 K above the eutectic temperature corresponds to a significant change of the Ge-Te partial structure factor. The detailed structural analysis shows that volume variations observed upon melting in Ge sub 1 sub 5 Te sub 8 sub 5 , as in liquid GeSe and GeTe, can be explained in terms of the competition between two types of local environment of the germanium atoms. A symmetrical coordination octahedron is entropically favoured at high temperature, while an asymmetrical octahedron resulting from the local manifestation of the Peierls distortion is electronically favoured at lower temperatures.

  7. Simulation of an erbium-doped chalcogenide micro-disk mid-infrared laser source.

    Science.gov (United States)

    Al Tal, Faleh; Dimas, Clara; Hu, Juejun; Agarwal, Anu; Kimerling, Lionel C

    2011-06-20

    The feasibility of mid-infrared (MIR) lasing in erbium-doped gallium lanthanum sulfide (GLS) micro-disks was examined. Lasing condition at 4.5 µm signal using 800 nm pump source was simulated using rate equations, mode propagation and transfer matrix formulation. Cavity quality (Q) factors of 1.48 × 10(4) and 1.53 × 10(6) were assumed at the pump and signal wavelengths, respectively, based on state-of-the-art chalcogenide micro-disk resonator parameters. With an 80 µm disk diameter and an active erbium concentration of 2.8 × 10(20) cm(-3), lasing was shown to be possible with a maximum slope efficiency of 1.26 × 10(-4) and associated pump threshold of 0.5 mW.

  8. Second harmonic generation in nanoscale films of transition metal chalcogenides: Taking into account multibeam interference

    Science.gov (United States)

    Lavrov, S. D.; Kudryavtsev, A. V.; Shestakova, A. P.; Kulyuk, L.; Mishina, E. D.

    2016-05-01

    Second harmonic generation is studied in structures containing nanoscale layers of transition metal chalcogenides that are two-dimensional semiconductors and deposited on a SiO2/Si substrate. The second harmonic generation intensity is calculated with allowance for multibeam interference in layers of dichalcogenide and silicon oxide. The coefficient of reflection from the SiO2-layer-based Fabry-Perot cavity is subsequently calculated for pump wave fields initiating nonlinear polarization at every point of dichalcogenide, which is followed by integration of all second harmonic waves generated by this polarization. Calculated second harmonic intensities are presented as functions of dichalcogenide and silicon oxide layer thicknesses. The dependence of the second harmonic intensity on the MoS2 layer thickness is studied experimentally in the layer of 2-140 nm. A good coincidence of the experimental data and numerical simulation results has been obtained.

  9. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    Science.gov (United States)

    Li, Shu-Guang; Zhou, Hong-Song; Yin, Guo-Bing

    2011-11-01

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kΛ of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2 μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm.

  10. Investigation of magnetic phases in parent compounds of iron-chalcogenides via quasiparticle scattering interference

    Science.gov (United States)

    Kamble, Bhaskar; Akbari, Alireza; Eremin, Ilya

    2016-04-01

    We employ a five-orbital tight-binding model to develop the mean-field solution for various possible spin density wave states in the iron-chalcogenides. The quasiparticle interference (QPI) technique is applied to detect signatures of these states due to scatterings arising from non-magnetic impurities. Apart from the experimentally observed double-striped structure with ordering vector (π/2,π/2) , the QPI method is investigated for the extended-stripe as well as the orthogonal double-stripe phase. We discuss QPI as a possible tool to detect and classify various magnetic structures with different electronic structure reconstruction within the framework of the \\text{Fe}1+y\\text{Te} compound.

  11. Si1Sb2Te3 phase change material for chalcogenide random access memory

    Institute of Scientific and Technical Information of China (English)

    Zhang Ting; Song Zhi-Tang; Liu Bo; Liu Wei-Li; Feng Song-Lin; Chen Bomy

    2007-01-01

    This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory.Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase.The film holds a threshold current about 0.155 mA,which is smaller than the value 0.31 mA of Ge2Sb2Te5 film.Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at~180°C and changes to hexagonal structure at~270°C.Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method.Data retention of the films was characterized as well.

  12. An SMS structure based temperature sensor using a chalcogenide multimode fibre

    Science.gov (United States)

    Wang, Pengfei; Yuan, Libo; Brambilla, Gilberto; Farrell, Gerald

    2016-11-01

    In this work we investigated the fabrication of a singlemode-multimode-singlemode (SMS) fibre structure based on a chalcogenide (As2S3 and AsxS1-x) multimode fibre (MMF) sandwiched between two standard silica singlemode fibres (SMFs) using a commercial fibre fusion splicer. The temperature dependence of this hybrid fibre structure was also investigated. A first proof of concept showed that the hybrid SMS fibre structure has an average experimental temperature sensitivity of 50.63 pm/°C over a temperature range of 20 °C 100°C at wavelengths around 1.55 μm. The measured results show a general agreement with numerical simulations based on a guided-mode propagation analysis method. Our result provides a potential platform for the development of compact, high-optical-quality and robust sensing devices operating at the mid-infrared wavelength range.

  13. Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM

    Science.gov (United States)

    Bogoslovskiy, Nikita; Tsendin, Konstantin

    2017-03-01

    In the phase-change memory (PCM) crystallization occurs in the high-current filament which forms during switching to the conductive state. In the present paper we conduct a numerical modeling of the current filament formation dynamics in thin chalcogenide films using an electronic-thermal model based on negative-U centers tunnel ionization and Joule heating. The key role of inhomogeneities in the filament formation process is shown. Steady-state filament parameters were obtained from the analysis of the stationary heat conduction equation. The filament formation dynamics and the steady-state filament radius and temperature could be controlled by material parameters and contact resistance. Consequently it is possible to control the size of the region wherein crystallization occurs. A good agreement with numerous experimental data leads to the conclusion that thermal effects play a significant role in CGS conduction and high-current filament formation while switching.

  14. Thermal and Dielectric Studies On Ge10se69tl21 Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    B.J. Madhu

    2011-01-01

    Full Text Available Bulk Ge10Se69Tl21 chalcogenide glass is prepared by melt quenching technique. Thermal analysis of bulk Ge10Se69Tl21 glass has been undertaken using temperature modulated Alternating Differential Scanning Calorimetry (ADSC. The Ge10Se69Tl21 glass is found to exhibit single glass transition temperature (Tg and double stage crystallization reactions (Tc1 & Tc2. The dependence of dielectric properties such as dielectric loss tangent (tanδ, dielectric constant (ε’ and dielectric loss factor (ε’’ on the frequency has been studied at the room temperature in the frequency range 10 kHz to 5 MHz. The dielectric parameters tanδ, ε’and ε’’ are found to decrease with the increase in the frequency. Further, resistance of the Ge10Se69Tl21 sample is also found to decrease with the increase in the frequency.

  15. New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, A.M.; Micocci, G.; Rizzo, A.

    1983-09-01

    The main characteristics and the possible applications of some new materials for optoelectronic devices are analyzed. For this purpose, the most widely used growth methods for obtaining good quality single crystals of indium and gallium chalcogenide layered compounds are described together with the best results obtained by us in the growth of GaS, GaSe, GaTe and InSe. The structural characteristics of these compounds, as inferred by electron and X-ray diffraction are reported. The electrical and optical properties of the various materials are related to the growth methods and are analyzed taking into account the trapping centers present in the energy gaps. The parameters of these centers are reported for all the analyzed layered compounds as determined by different electric and photoelectric techniques.

  16. Power-efficient production of photon pairs in a tapered chalcogenide microwire

    Energy Technology Data Exchange (ETDEWEB)

    Meyer-Scott, Evan, E-mail: emeyersc@uwaterloo.ca; Dot, Audrey [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Ahmad, Raja; Li, Lizhu; Rochette, Martin [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montréal, Québec H3A 2A7 (Canada); Jennewein, Thomas [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Quantum Information Science Program, Canadian Institute for Advanced Research, 180 Dundas Street West, Suite 1400, Toronto, Ontario M5G 1Z8 (Canada)

    2015-02-23

    Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

  17. Dy{sup 3+}-doped Ga–Sb–S chalcogenide glasses for mid-infrared lasers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Mingjie [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China); Yang, Anping, E-mail: apyang@jsnu.edu.cn [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China); Peng, Yuefeng [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China); Zhang, Bin; Ren, He; Guo, Wei; Yang, Yan; Zhai, Chengcheng; Wang, Yuwei; Yang, Zhiyong; Tang, Dingyuan [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China)

    2015-10-15

    Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficiency. • The mid-infrared emissions have large stimulated emission cross sections. - Abstract: Novel Ga–Sb–S chalcogenide glasses doped with different amount of Dy{sup 3+} ions were prepared. Their thermal stability, optical properties, and mid-infrared (MIR) emission properties were investigated. The glasses show good thermal stability, excellent infrared transparency, very low phonon energy (∼306 cm{sup −1}), and intense emissions centered at 2.95, 3.59, 4.17 and 4.40 μm. Three Judd–Ofelt intensity parameters (Ω{sub 2} = 8.51 × 10{sup −20} cm{sup 2}, Ω{sub 4} = 2.09 × 10{sup −20} cm{sup 2}, and Ω{sub 6} = 1.60 × 10{sup −20} cm{sup 2}) are obtained, and the related radiative transition properties are evaluated. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions (88.10% and 1.11 × 10{sup −20} cm{sup 2} for 2.95 μm emission, 75.90% and 0.38 × 10{sup −20} cm{sup 2} for 4.40 μm emission, respectively) in the Dy{sup 3+}-doped Ga–Sb–S glasses make them promising gain materials for the MIR lasers.

  18. Hubbard interactions in iron-based pnictides and chalcogenides: Slater parametrization, screening channels, and frequency dependence

    Science.gov (United States)

    van Roekeghem, Ambroise; Vaugier, Loïg; Jiang, Hong; Biermann, Silke

    2016-09-01

    We calculate the strength of the frequency-dependent on-site electronic interactions in the iron pnictides LaFeAsO, BaFe2As2 , BaRu2As2 , and LiFeAs and the chalcogenide FeSe from first principles within the constrained random phase approximation. We discuss the accuracy of an atomiclike parametrization of the two-index density-density interaction matrices based on the calculation of an optimal set of three independent Slater integrals, assuming that the angular part of the Fe d localized orbitals can be described within spherical harmonics as for isolated Fe atoms. We show that its quality depends on the ligand-metal bonding character rather than on the dimensionality of the lattice: it is excellent for ionic-like Fe-Se (FeSe) chalcogenides and a more severe approximation for more covalent Fe-As (LaFeAsO, BaFe2As2 ) pnictides. We furthermore analyze the relative importance of different screening channels, with similar conclusions for the different pnictides but a somewhat different picture for the benchmark oxide SrVO3: the ligand channel does not appear to be dominant in the pnictides, while oxygen screening is the most important process in the oxide. Finally, we analyze the frequency dependence of the interaction. In contrast to simple oxides, in iron pnictides its functional form cannot be simply modeled by a single plasmon, and the actual density of modes enters the construction of an effective Hamiltonian determining the low-energy properties.

  19. Mid-infrared supercontinuum generation spanning more than 11 μm in a chalcogenide step-index fiber

    DEFF Research Database (Denmark)

    Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis;

    2015-01-01

    Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively.......Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively....

  20. Fabrication of SiGeSb heating electrodes and their application for four-terminal chalcogenide programmable switches

    Science.gov (United States)

    Park, Young Sam; Lee, Seung-Yun

    2015-03-01

    This paper reports on sputter-deposited SiGeSb thin films and their application for four-terminal chalcogenide switch devices. The microstructures and electrical properties of the SiGeSb films were highly dependent on antimony concentration and annealing temperature. Microstructural changes such as surface roughening and formation of antimony grains were observed only for the Sb-rich SiGeSb films after annealing at 400 °C and higher. The sheet resistance of the SiGeSb films containing a small amount of antimony changed sporadically with annealing temperature because of a trade-off between activation and surface depletion of antimony. The resistance of the SiGeSb heating electrodes was varied by changing sputtering power for the antimony target and by changing the annealing temperature. Four-terminal chalcogenide switch devices were fabricated with SiGeSb heating electrodes of varying resistance. It was found that the switching voltage of the fabricated switch device was proportional to the resistance of the SiGeSb heating electrode. This indicates that the SiGeSb films with tunable sheet resistance are of great importance in fabricating chalcogenide switch devices and the optimization of the resistance of the SiGeSb film is essential to ensure proper switch operation.

  1. A Self-Templating Scheme for the Synthesis of Nanostructured Transition Metal Chalcogenide Electrodes for Capacitive Energy Storage

    KAUST Repository

    Xia, Chuan

    2015-06-11

    Due to their unique structural features including well-defined interior voids, low density, low coefficients of thermal expansion, large surface area and surface permeability, hollow micro/nanostructured transition metal sulfides with high conductivity have been investigated as new class of electrode materials for pseudocapacitor applications. Herein, we report a novel self-templating strategy to fabricate well-defined single and double-shell NiCo2S4 hollow spheres, as a promising electrode material for pseudocapacitors. The surfaces of the NiCo2S4 hollow spheres consist of self-assembled 2D mesoporous nanosheets. This unique morphology results in a high specific capacitance (1257 F g-1 at 2 A g-1), remarkable rate performance (76.4% retention of initial capacitance from 2 A g-1 to 60 A g-1) and exceptional reversibility with a cycling efficiency of 93.8% and 87% after 10,000 and 20,000 cycles, respectively, at a high current density of 10 A g-1. The cycling stability of our ternary chalcogenides is comparable to carbonaceous electrode materials, but with much higher specific capacitance (higher than any previously reported ternary chalcogenide), suggesting that these unique chalcogenide structures have potential application in next-generation commercial pseudocapacitors.

  2. Linear and nonlinear optical properties of new Se-based quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-02-01

    We are reporting the linear and nonlinear optical properties of Se-based quaternary chalcogenide Se-Sn-(Bi,Te) thin films. Thin films of bulk chalcogenide glasses, prepared by melt quenching method are deposited on glass substrate using thermal evaporation technique. The optical behavior of studied chalcogenide glass systems is investigated using transmission spectra in the spectral range of 400-2500 nm. The glasses exhibit considerable optical nonlinearities which are estimated using linear optical parameters. Linear refractive index has been calculated using well-known Swanepoel method. Wemple-DiDomenico (WDD) parameters are also reported for the investigated glasses. Optical band gap is determined using Tauc extrapolation method and is observed to increase with Sn content. The formulation proposed by Fournier and Snitzer is used to determine the nonlinear behavior of the refractive index. It is observed that n2 increases linearly with increasing n. The values of n2 are compared with pure silica and the results are 100-600 orders higher. The third-order susceptibility χ(3) is also reported in this paper. Two-photon absorption coefficient β2 is determined using optical band gap data. A strong dependence of β2 and n2 is observed on normalized photon energy (?) for a fixed excitation wavelength (1064 nm).

  3. Multilayer systems of alternating chalcogenide As Se and polymer thin films prepared using thermal evaporation and spin-coating techniques

    Science.gov (United States)

    Kohoutek, T.; Wagner, T.; Orava, J.; Krbal, M.; Ilavsky, J.; Vesely, D.; Frumar, M.

    2007-05-01

    We describe preparation and characterization of multilayer planar systems based on alternating chalcogenide As Se and polymer polyamide-imide (PAI) or polyvinyl-butyral (PVB) thin films. We deposited films of thermally evaporated As33Se67 chalcogenide glass periodically alternating with PAI or PVB films. Fifteen layers of As Se+PAI system and 17 layers of As Se+PVB system were deposited. The film thicknesses were approximately 100 nm for all of the film types. Polymer film thicknesses were calculated from profilometric measurements performed by an atomic force microscopy. Optical properties of prepared multilayers and also As Se, PAI and PVB single layers were established using UV vis NIR and ellipsometric spectroscopies. Both, As Se+PAI and As Se+PVB multilayer systems, exhibited the reflection (stop) bands centered near 830 nm. The bandwidth of reflection band of As Se+PAI multilayer was 90 nm while bandwidth of As Se+PVB system increased to 150 nm because PVB films had about 0.2 lower refractive index. A new possibility for the application of chalcogenide thin films appeared as high refractive index materials suitable for fabrication of optical elements (reflectors) for near-infrared region. Changing the films composition and thickness, multilayer systems with tailored position of stop band could be designed and prepared.

  4. Investigations into the Structure and Dynamics of Chalcogenide Glasses using High-Resolution Nuclear Magnetic Resonance Spectroscopy

    Science.gov (United States)

    Kaseman, Derrick Charles

    Chalcogenide glasses constitute an important class of materials that are sulfides, selenides or tellurides of group IV and/or V elements, namely Ge, As, P and Si with minor concentrations of other elements such as Ga, Sb, In. Because of their infrared transparency that can be tuned by changing chemistry and can be actively altered by exposure to band gap irradiation, chalcogenide glasses find use in passive and active optical devices for applications in the areas of photonics, remote sensing and memory technology. Therefore, it is important to establish predictive models of structure-property relationships for these materials for optimization of their physical properties for various applications. Structural elucidation of chalcogenide glasses is experimentally challenging and in order to make predictive structural models, structural units at both short and intermediate -range length scales must be identified and quantified. Nuclear Magnetic Resonance (NMR) spectroscopy is an element-specific structural probe that is uniquely suited for this task, but resolution and sensitivity issues have severely limited the applications of such techniques in the past. The recent development of multi-dimensional solid-state NMR techniques, such as Phase Adjusted Spinning Sidebands (PASS) and Magic Angle Turning (MAT) can potentially alleviate such issues. In this study novel two-dimensional, high-resolution 77Se and 125Te MATPASS NMR spectroscopic techniques are utilized to elucidate quantitatively the compositional evolution of the short- and intermediate- range atomic structure in three binary chalcogenide glass-forming systems, namely: GexSe100-x, AsxSe100-x , and AsxTe100-x. The spectroscopic results provide unambiguous site speciation and quantification for short- and intermediate-range structural motifs present in these glasses. In turn, for all systems, robust structural models and the corresponding structure-property relationships are successfully established as a function

  5. Nanoscale structure and atomic disorder in the iron-based chalcogenides.

    Science.gov (United States)

    Saini, Naurang Lal

    2013-02-01

    The multiband iron-based superconductors have layered structure with a phase diagram characterized by a complex interplay of charge, spin and lattice excitations, with nanoscale atomic structure playing a key role in their fundamental electronic properties. In this paper, we briefly review nanoscale structure and atomic disorder in iron-based chalcogenide superconductors. We focus on the Fe(Se,S)1-x Te x (11-type) and K0.8Fe1.6Se2 (122-type) systems, discussing their local structure obtained by extended x-ray absorption fine structure. Local structure studies on the Fe(Se,S)1-x Te x system reveal clear nanoscale phase separation characterized by coexisting components of different atomic configurations, similar to the case of random alloys. In fact, the Fe-Se/S and Fe-Te distances in the ternary Fe(Se,S)1-x Te x are found to be closer to the respective distances in the binary FeSe/FeS and FeTe systems, showing significant divergence of the local structure from the average one. The observed features are characteristic of ternary random alloys, indicating breaking of the local symmetry in these materials. On the other hand, K0.8Fe1.6Se2 is known for phase separation in an iron-vacancy ordered phase and an in-plane compressed lattice phase. The local structure of these 122-type chalcogenides shows that this system is characterized by a large local disorder. Indeed, the experiments suggest a nanoscale glassy phase in K0.8Fe1.6Se2, with the superconductivity being similar to the granular materials. While the 11-type structure has no spacer layer, the 122-type structure contains intercalated atoms unlike the 1111-type REFeAsO (RE = rare earth) oxypnictides, having well-defined REO spacer layers. It is clear that the interlayer atomic correlations in these iron-based superconducting structures play an important role in structural stability as well as superconductivity and magnetism.

  6. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    Institute of Scientific and Technical Information of China (English)

    LI Shu-Guang; ZHOU Hong-Song; YIN Guo-Bing

    2011-01-01

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kA of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2μm can transmit the lights with wavelengths ranging from 3.1μm to 3.7μm.%Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method.A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps.For enlarging the bandgap width,an improved GLS HC-PCF is put forward,the normalized frequency κA of the improved fiber is from 7.2 to 8.5 in its first bandgap.The improved GLS HC-PCF with pitch of 4.2μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm.Photonic crystal fibers (PCFs) can be classified into total internal reflection PCFs and photonic bandgap (PBG) PCFs[1] Solid core PCFs are one kind of the total internal reflection PCFs;hollow-core PCFs (HC-PCFs) are a kind of typical PBG fibers.The conception of HC-PCFs was first proposed by Russel in 1991.[2] Later,it was theoretically demonstrated by Birks et al.[3] in 1995.A bandgap photonic crystal fiber was mde by Knight et al.[4] for the first time in 1998.On the basis of these works,the first HC-PCF was designed and made by Cregan et al.[5] in 1999.

  7. Growth and Characterization of Multisegment Chalcogenide Alloy Nanostructures for Photonic Applications in a Wide Spectral Range

    Science.gov (United States)

    Turkdogan, Sunay

    In this dissertation, I described my research on the growth and characterization of various nanostructures, such as nanowires, nanobelts and nanosheets, of different semiconductors in a Chemical Vapor Deposition (CVD) system. In the first part of my research, I selected chalcogenides (such as CdS and CdSe) for a comprehensive study in growing two-segment axial nanowires and radial nanobelts/sheets using the ternary CdSxSe1-x alloys. I demonstrated simultaneous red (from CdSe-rich) and green (from CdS-rich) light emission from a single monolithic heterostructure with a maximum wavelength separation of 160 nm. I also demonstrated the first simultaneous two-color lasing from a single nanosheet heterostructure with a wavelength separation of 91 nm under sufficiently strong pumping power. In the second part, I considered several combinations of source materials with different growth methods in order to extend the spectral coverage of previously demonstrated structures towards shorter wavelengths to achieve full-color emissions. I achieved this with the growth of multisegment heterostructure nanosheets (MSHNs), using ZnS and CdSe chalcogenides, via our novel growth method. By utilizing this method, I demonstrated the first growth of ZnCdSSe MSHNs with an overall lattice mismatch of 6.6%, emitting red, green and blue light simultaneously, in a single furnace run using a simple CVD system. The key to this growth method is the dual ion exchange process which converts nanosheets rich in CdSe to nanosheets rich in ZnS, demonstrated for the first time in this work. Tri-chromatic white light emission with different correlated color temperature values was achieved under different growth conditions. We demonstrated multicolor (191 nm total wavelength separation) laser from a single monolithic semiconductor nanostructure for the first time. Due to the difficulties associated with growing semiconductor materials of differing composition on a given substrate using traditional planar

  8. Influence of the coordination number Z on the micro-Raman spectra of ternary chalcogenide glasses

    Science.gov (United States)

    Iovu, M. S.; Iaseniuc, O. V.; Dinescu, D.; Enachescu, M.

    2016-12-01

    Chalcogenide glasses are attractive materials due to its application in photonics and optoelectronics. Chalcogenide glasses GexAsxSe1-2x (average coordination number Z=2.15÷2.90) and (As4S3Se3)1-xSnx (average coordination number Z=2.4÷2.56), which contain elements of IV group of the Periodic Table, such as Ge and Sn are important for a wide range of technical applications, such as infrared optical elements, acousto-optic and alloptical switching devices, holographic recording media, diffractive optics, photonic crystals, etc. [1, 2]. Raman spectroscopy is an efficient method for obtaining information on the local structure of the disordered material, especially when the composition is varied. In this paper are reported the Micro-Raman spectra of GexAsxSe1-2x and (As4S3Se3)1-xSnx bulk glasses and amorphous thin films. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (As4S3Se3)1-xSnx thin films consist of two broad bands located at around ν=236 cm-1 and ν=345 cm-1, which corresponds to the symmetric stretching vibration modes of AsSe3/2 and AsS3/2 pyramids, respectively. Tin impurities didn't change the shape of Micro-Raman spectra, but shift the both bands to low frequency region. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (GexAsxSe1-2x thin films consist of one main vibration band located at around ν=246 cm-1 for lower concentration of Ge and As, and is attributed to (AsSe1/2)3 pyramidal units. With increasing of Ge and As concentrations this band shifts to lower frequency region up to ν=236 cm-1 for x=0.30. The vibration band situated around ν=205 cm-1 is attributed to Ge(Se1/2)4 tetrahedral units and increase in the intensity with increasing of Ge and As concentrations. Some shoulders in high frequency regions at ν=365-390 cm-1 and ν=500-530 cm-1, caused by the presence of As-Se bands and Se-Se chains also was observed.

  9. Design and growth of novel compounds for radiation sensors: multinary chalcogenides

    Science.gov (United States)

    Singh, N. B.; Su, Ching-Hua; Nagaradona, Teja; Arnold, Brad; Choa, Fow-Sen

    2016-05-01

    Increasing threats of radiological weapons have revitalized the researches for low cost large volume γ-ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage.

  10. Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

    Indian Academy of Sciences (India)

    H M Pathan; C D Lokhande

    2004-04-01

    During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

  11. Interplay between magnetism and superconductivity in iron-chalcogenide superconductors: crystal growth and characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Wen Jinsheng; Birgeneau, R J [Physics Department, University of California, Berkeley, CA 94720 (United States); Xu Guangyong; Gu Genda; Tranquada, J M, E-mail: jinshengwen@berkeley.edu, E-mail: jtran@bnl.gov [Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2011-12-15

    In this review, we present a summary of results on single crystal growth of two types of iron-chalcogenide superconductors, Fe{sub 1+y}Te{sub 1-x}Se{sub x} (11), and A{sub x}Fe{sub 2-y}Se{sub 2} (A = K, Rb, Cs, Tl, Tl/K, Tl/Rb), using Bridgman, zone-melting, vapor self-transport and flux techniques. The superconducting and magnetic properties (the latter gained mainly from neutron scattering measurements) of these materials are reviewed to demonstrate the connection between magnetism and superconductivity. It will be shown that for the 11 system, while static magnetic order around the reciprocal lattice position (0.5, 0) competes with superconductivity, spin excitations centered around (0.5, 0.5) are closely coupled to the materials' superconductivity; this is made evident by the strong correlation between the spectral weight around (0.5, 0.5) and the superconducting volume fraction. The observation of a spin resonance below the superconducting temperature, T{sub c}, and the magnetic-field dependence of the resonance emphasize the close interplay between spin excitations and superconductivity, similar to cuprate superconductors. In A{sub x}Fe{sub 2-y}Se{sub 2}, superconductivity with T{sub c} {approx} 30 K borders an antiferromagnetic insulating phase; this is closer to the behavior observed in the cuprates but differs from that in other iron-based superconductors.

  12. Interplay between magnetism and superconductivity in iron-chalcogenide superconductors: crystal growth and characterizations

    Science.gov (United States)

    Wen, Jinsheng; Xu, Guangyong; Gu, Genda; Tranquada, J. M.; Birgeneau, R. J.

    2011-12-01

    In this review, we present a summary of results on single crystal growth of two types of iron-chalcogenide superconductors, Fe1+yTe1-xSex (11), and AxFe2-ySe2 (A = K, Rb, Cs, Tl, Tl/K, Tl/Rb), using Bridgman, zone-melting, vapor self-transport and flux techniques. The superconducting and magnetic properties (the latter gained mainly from neutron scattering measurements) of these materials are reviewed to demonstrate the connection between magnetism and superconductivity. It will be shown that for the 11 system, while static magnetic order around the reciprocal lattice position (0.5, 0) competes with superconductivity, spin excitations centered around (0.5, 0.5) are closely coupled to the materials' superconductivity; this is made evident by the strong correlation between the spectral weight around (0.5, 0.5) and the superconducting volume fraction. The observation of a spin resonance below the superconducting temperature, Tc, and the magnetic-field dependence of the resonance emphasize the close interplay between spin excitations and superconductivity, similar to cuprate superconductors. In AxFe2-ySe2, superconductivity with Tc ~ 30 K borders an antiferromagnetic insulating phase; this is closer to the behavior observed in the cuprates but differs from that in other iron-based superconductors.

  13. Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

    Energy Technology Data Exchange (ETDEWEB)

    Meenatchi, Boominathan [Cauvery College for Women, Tamilnadu (India); Renuga, Velayutham [National College, Tamilnadu (India); Manikandan, Ayyar [Bharath Institute of Higher Education and Research, Bharath University, Tamilnadu (India)

    2016-03-15

    Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

  14. Large and Ultrafast Third-Order Nonlinear Optical Properties of Ge-S Based Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    CHU Sai-Sai; WANG Shu-Feng; TAO Hai-Zheng; WANG Zhen-Wei; YANG Hong; LIN Chang-Gui; GONG Qi-Huang; ZHAO Xiu-Jian

    2007-01-01

    We report ultrafast third-order nonlinear optical (NLO) properties of several chalcogenide glasses GeSx (x = 1.8,2.0, 2.5) measured by femtosecond time-resolved optical Kerr gate technique at 820nm. The third-order nonlinear susceptibility of GeS1.8 glass is determined to be as large as 1.41 × 10-12 esu, which is the maximum value of the third order nonlinear susceptibility X(3) for the three compositions investigated. The symmetric Gauss profiles of optical Kerr signals reveal the nature of ultrafast nonlinear response of these samples, which are originated from the ultrafast polarization of the electron clouds. By detailed microstructural analysis of these glasses based on the chain-crossing model (CCM) and the random-covalent-network model (RCNM), it can be concluded that X(3) value of GeSx glasses can be enhanced greatly by S-S covalent bonds or S3Ge-GeS3 ethane-like units.

  15. Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

    KAUST Repository

    Yang, Xiaoming

    2014-12-12

    Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

  16. Ultra broadband flat dispersion tailoring on reversed-rib chalcogenide glass waveguide

    Science.gov (United States)

    Zhai, Yanfen; Qi, Renduo; Yuan, Chenzhi; Zhang, Wei; Huang, Yidong

    2016-11-01

    In this paper, we introduce a horizontal slot in the reversed-rib chalcogenide glass waveguide to tailor its dispersion characteristics. The waveguide exhibits a flat and low dispersion over a wavelength range of 1080 nm, in which the dispersion fluctuates between -10.6 ps·nm-1·km-1 and +11.14 ps·nm-1·km-1. The dispersion tailoring effect is due to the mode field transfer from the reversed-rib waveguide to the slot with the increase of wavelength, which results in the extension of the low dispersion band. Moreover, the nonlinear coefficient and the phase-matching condition of the four-wave mixing process in this waveguide are studied, showing that the waveguide has great potential in nonlinear optical applications over a wide wavelength range. Project supported by the National Basic Research Program of China (Grant Nos. 2013CB328700 and 2011CBA00303) and the National Natural Science Foundation of China (Grant Nos. 61575102 and 61321004).

  17. Hybrid metal-organic chalcogenide nanowires with electrically conductive inorganic core through diamondoid-directed assembly

    Science.gov (United States)

    Yan, Hao; Hohman, J. Nathan; Li, Fei Hua; Jia, Chunjing; Solis-Ibarra, Diego; Wu, Bin; Dahl, Jeremy E. P.; Carlson, Robert M. K.; Tkachenko, Boryslav A.; Fokin, Andrey A.; Schreiner, Peter R.; Vailionis, Arturas; Kim, Taeho Roy; Devereaux, Thomas P.; Shen, Zhi-Xun; Melosh, Nicholas A.

    2016-12-01

    Controlling inorganic structure and dimensionality through structure-directing agents is a versatile approach for new materials synthesis that has been used extensively for metal-organic frameworks and coordination polymers. However, the lack of `solid’ inorganic cores requires charge transport through single-atom chains and/or organic groups, limiting their electronic properties. Here, we report that strongly interacting diamondoid structure-directing agents guide the growth of hybrid metal-organic chalcogenide nanowires with solid inorganic cores having three-atom cross-sections, representing the smallest possible nanowires. The strong van der Waals attraction between diamondoids overcomes steric repulsion leading to a cis configuration at the active growth front, enabling face-on addition of precursors for nanowire elongation. These nanowires have band-like electronic properties, low effective carrier masses and three orders-of-magnitude conductivity modulation by hole doping. This discovery highlights a previously unexplored regime of structure-directing agents compared with traditional surfactant, block copolymer or metal-organic framework linkers.

  18. Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M =Cu ,Ag )

    Science.gov (United States)

    Ma, Yandong; Kou, Liangzhi; Dai, Ying; Heine, Thomas

    2016-06-01

    Two-dimensional (2D) topological insulators (TIs) are recently recognized states of quantum matter that are highly interesting for lower-power-consuming electronic devices owing to their nondissipative transport properties protected from backscattering. So far, only few 2D TIs, suffering from small bulk band gap (TIs in group-11 chalcogenide 2D crystals, M2Te (M =Cu ,Ag ) . The nontrivial topological states in C u2Te and A g2Te 2D crystals, identified by topological invariant and edge state calculations, exhibit sizeable bulk gaps of 78 and 150 meV, respectively, suggesting that they are candidates for room-temperature applications. Moreover, strain engineering leads to effective control of the nontrivial gaps of C u2Te and A g2Te , and a topological phase transition can be realized in C u2Te , while the nontrivial phase in A g2Te is stable against strain. Their dynamic and thermal stabilities are further confirmed by employing phonon calculations and ab initio molecular dynamic simulations.

  19. Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

    Science.gov (United States)

    Yang, X. M.; Zhang, Yaping; Syed, Ahad

    2015-04-01

    Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

  20. The use of castor oil and ricinoleic acid in lead chalcogenide nanocrystal synthesis

    Science.gov (United States)

    Kyobe, Joseph W. M.; Mubofu, Egid B.; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

    2016-08-01

    A green solution-based thermolysis method for the synthesis of lead chalcogenide (PbE, E = S, Se, Te) nanocrystals in castor oil (CSTO) and its isolate ricinoleic acid (RA) is described. The blue shift observed from the optical spectra of CSTO and RA-capped PbE nanocrystals (NCs) confirmed the evidence of quantum confinement. The dimensions of PbE NCs obtained from NIR absorption spectra, transmission electron microscopy (TEM), and X-ray diffraction (XRD) studies were in good agreement. The particle sizes estimated were in the range of 20, 25, and 130 nm for castor oil-capped PbS, PbSe, and PbTe, respectively. Well-defined close to cubic-shaped particles were observed in the scanning electron microscopy (SEM) images of PbSe and PbTe nanocrystals. The high-resolution TEM and selective area electron diffraction (SAED) micrographs of the as-synthesized crystalline PbE NCs showed distinct lattice fringes with d-spacing distances corroborating with the standard values reported in literature.

  1. Optical properties and local structure of Dy3+-doped chalcogenide and chalcohalide glasses

    Institute of Scientific and Technical Information of China (English)

    TANG Gao; YANG Zhiyong; LUO Lan; CHEN Wei

    2008-01-01

    Dy3+-doped Ge-Ga-Se chalcogenide glasses and GeSe2-Ga2Se3-CsI chalcohalide glasses were prepared. The absorption, emission properties, and local structure of the glasses were investigated. When excited at 808 nm diode laser, intense 1.32 and 1.55 μm near-infrared luminescence were observed with full width at half maximum (FWHM) of about 90 and 50 rim, respectively. The lifetime of the 1.32 μm emission varied due to changes in the local structure surrounding Dy3+ ions. The longest lifetime was over 2.5 ms, and the value was signifi-cantly higher than that in other Dy3+-doped glasses. Some other spectroscopic parameters were calculated by using Judd-Ofelt theory. Meanwhile, Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses showed good infrared transmittance. As a result, Dy3+-doped Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses were believed to be useful hosts for 1.3 μm optical fiber amplifier.

  2. High-pressure and temperature-induced structural, elastic, and thermodynamical properties of strontium chalcogenides

    Science.gov (United States)

    Varshney, Dinesh; Jain, S.; Shriya, S.; Khenata, R.

    2016-09-01

    Pressure- and temperature-dependent mechanical, elastic, and thermodynamical properties of rock salt to CsCl structures in semiconducting Sr X ( X = O, S, Se, and Te) chalcogenides are presented based on model interatomic interaction potential with emphasis on charge transfer interactions, covalency effect, and zero point energy effects apart from long-range Coulomb, short-range overlap repulsion extended and van der Waals interactions. The developed potential with non-central forces validates the Cauchy discrepancy among elastic constants. The volume collapse ( V P/ V 0) in terms of compressions in Sr X at higher pressure indicates the mechanical stiffening of lattice. The expansion of Sr X lattice is inferred from steep increase in V T/ V 0 and is attributed to thermal softening of Sr X lattice. We also present the results for the temperature-dependent behaviors of hardness, heat capacity, and thermal expansion coefficient. From the Pugh's ratio (ϕ = B T /G H), the Poisson's ratio ( ν) and the Cauchy's pressure ( C 12- C 44), we classify SrO as ductile but SrS, SrSe, and SrTe are brittle material. To our knowledge these are the first quantitative theoretical prediction of the pressure and temperature dependence of mechanical stiffening, thermally softening, and brittle nature of Sr X ( X = O, S, Se, and Te) and still await experimental confirmations.

  3. Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

    Science.gov (United States)

    Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

    2016-05-01

    Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

  4. Non-Newtonian flow of an ultralow-melting chalcogenide liquid in strongly confined geometry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Siyuan; Jain, Chhavi; Wondraczek, Katrin; Kobelke, Jens [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Wondraczek, Lothar [Otto Schott Institute of Material Research (OSIM), Friedrich Schiller University Jena, Fraunhoferstr. 6, 07743 Jena (Germany); Troles, Johann; Caillaud, Celine [Université de Rennes I, Equipe Verres et Céramiques, UMR 6226 Sciences Chimiques de Rennes, Campus de Beaulieu, 35042 Rennes (France); Schmidt, Markus A., E-mail: markus.schmidt@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Otto Schott Institute of Material Research (OSIM), Friedrich Schiller University Jena, Fraunhoferstr. 6, 07743 Jena (Germany)

    2015-05-18

    The flow of high-viscosity liquids inside micrometer-size holes can be substantially different from the flow in the bulk, non-confined state of the same liquid. Such non-Newtonian behavior can be employed to generate structural anisotropy in the frozen-in liquid, i.e., in the glassy state. Here, we report on the observation of non-Newtonian flow of an ultralow melting chalcogenide glass inside a silica microcapillary, leading to a strong deviation of the shear viscosity from its value in the bulk material. In particular, we experimentally show that the viscosity is radius-dependent, which is a clear indication that the microscopic rearrangement of the glass network needs to be considered if the lateral confinement falls below a certain limit. The experiments have been conducted using pressure-assisted melt filling, which provides access to the rheological properties of high-viscosity melt flow under previously inaccessible experimental conditions. The resulting flow-induced structural anisotropy can pave the way towards integration of anisotropic glasses inside hybrid photonic waveguides.

  5. Lead Chalcogenide on Silicon Infrared Focal Plane Arrays for Thermal Imaging(Review Paper

    Directory of Open Access Journals (Sweden)

    Hans Zogg

    2001-01-01

    Full Text Available "Narrow gap IV-VI [lead chalcogenides like Pbl-xSnxSe and PbTe] layers grown epitaxially on silicon( III substrates by molecular beam epitaxy exhibit high quality despite the large lattice and thermal expansion mismatch. A CaF2 buffer layer is employed for compatibility. Due to easy glide of misfit dislocations in the IV- VI layers, thei1rtal strains relax even at cryogenic. temperatures and after many temperature cyclings. The high permittivities of the IV- VI layers effectively shield the electric fields from charged defects. Higher quality devices are obtained from lower quality material, at variance to narrow gap 11- VI and 111- V compounds. Material characterisation and sensor array properties have been reviewed. Schottky barrier or p-n+ sensor arrays have been delineated using standard photolithography. At low temperatures, the sensitivities are limited by defects, mainly dislocations, and the device performance is predicted by the dislocation density. At higher temperatures, the ultimate theoretical sensitivity is obtained with Schottky barrier devices despite large mismatch and with only 3 µm thickness of the layers. First chara'cterisations of a 96 x 128 array on a silicon substrate containing the read-out circuits show that the concept is functional and gives high yield.

  6. Ellipsometric Characterization of Thin Films from Multicomponent Chalcogenide Glasses for Application in Modern Optical Devices

    Directory of Open Access Journals (Sweden)

    R. Todorov

    2013-01-01

    Full Text Available A review is given on the application of the reflectance ellipsometry for optical characterization of bulk materials and thin films with thickness between λ/20 and 2λ (at λ=632.8 nm. The knowledge of the optical constants (refractive index, n, and extinction coefficient, k of thin films is of a great importance from the point of view of modelling and controlling the manufacture of various optical elements, such as waveguides, diffraction gratings, and microlenses. The presented results concern the optical properties of thin films from multicomponent chalcogenide glasses on the base of As2S3 and GeS2 determined by multiple-angle-of-incidence ellipsometry and regarded as a function of the composition and thickness. The homogeneity of the films is verified by applying single-angle calculations at different angles. Due to decomposition of the bulk glass during thermal evaporation, an optical inhomogeneity of the thin As (Ge-S-Bi(Tl films is observed. The profile of n in depth of thin As-S-Tl (Bi films was investigated by evaporation of discrete layers. It is demonstrated that homogenous layers from the previous compounds with controlled composition can be deposited by coevaporation of As2S3 and metals or their compounds (Bi, Tl, In2S3.

  7. Studies of non-vacuum processing of Cu-chalcogenide thin films.

    Science.gov (United States)

    El Hamri, E; Meddah, M; Boulkadat, L; Elfanaoui, A; Bouabid, K; Nya, M; Portier, X; Ihlal, A

    2012-08-01

    Cu-chalcogenide thin films were prepared using a two stage method: one step electrodeposition of CuISe and CIGSe, and the sulfurisation of CISe to prepare CISSe thin films. The films were deposited on different substrates: Mo and ITO coated glass. The optimum potentials for electrodeposition of CISe and CIGSe films were respectively selected in the range -400 to -550 mV and -650 to -700 mV (vs. SCE). The electrodeposited layers were firmly adhesive. The well known chalcopyrite structure appears after annealing at 400 degrees C under Argon for CISe. The band gap value deduced from the optical measurements is close to 1 eV. To increase this value, addition of gallium in the aqueous electrolytic solution was performed. A band gap value as high as 1.26 eV was recorded on the obtained CIGSe films. Sulfurisation of CISe layers under 5% H2S/Ar atmosphere lead to a shift of the position of the principal XRD peaks indicating the substitution of selenium atoms by sulfur atoms and thus the formation of the quaternary CISSe. Optical measurements performed on this quaternary compound show that our films exhibit a band gap value scaling from 1 eV to 1.4 eV depending on the amount of sulphur incorporated into the layers during the heat treatments.

  8. Highly efficient cascaded amplification using Pr(3+)-doped mid-infrared chalcogenide fiber amplifiers.

    Science.gov (United States)

    Hu, Jonathan; Menyuk, Curtis R; Wei, Chengli; Brandon Shaw, L; Sanghera, Jasbinder S; Aggarwal, Ishwar D

    2015-08-15

    We computationally investigate cascaded amplification in a three-level mid-infrared (IR) Pr(3+)-doped chalcogenide fiber amplifier. The overlap of the cross-sections in the transitions (3)H(6)→(3)H(5) and (3)H(5)→(3)H(4) enable both transitions to simultaneously amplify a single wavelength in the range between 4.25 μm and 4.55 μm. High gain and low noise are achieved simultaneously if the signal is at 4.5 μm. We show that 45% of pump power that is injected at 2 μm can be shifted to 4.5 μm. The efficiency of using a mid-IR fiber amplifier is higher than what can be achieved by using mid-IR supercontinuum generation, which has been estimated at 25%. This mid-IR fiber amplifier can be used in conjunction with quantum cascade lasers to obtain a tunable, high-power mid-IR source.

  9. Silicon-based chalcogenide: Unexpected quantum spin Hall insulator with sizable band gap

    Science.gov (United States)

    Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji; Li, Sheng-shi; Yan, Shi-shen

    2016-10-01

    Searching for two-dimensional (2D) silicon-based topological materials is imperative for the development of various innovative devices. Here, by using first-principles calculations, we discover the silicon-based chalcogenide Si2Te2 film to be a 2D quantum spin Hall (QSH) insulator with a fundamental band gap of 0.34 eV, which can be tunable under external strain. This nontrivial topological phase stems from band inversion between the Si-px,y and Te-px,y orbitals, demonstrated by a single pair of topologically protected helical edge states with Dirac point located in the bulk gap. Notably, the characteristic properties of edge states, such as the Fermi velocity and edge shape, can be engineered by edge modifications. Additionally, the BN sheet is an ideal substrate for the experimental realization of Si2Te2 films, without destroying its nontrivial topology. Our works open a meaningful route for designing topological spintronics devices based on 2D silicon-based films.

  10. Optical properties change in laser-induced Te/As2Se3 chalcogenide thin films

    Science.gov (United States)

    Behera, Mukta; Naik, Ramakanta

    2016-10-01

    In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As2Se3 film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As2Se3 bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As2Se3 matrix was done by 532-nm laser irradiation. The structure of the As2Se3, as-prepared and irradiated Te/As2Se3 films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As2Se3 film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices.

  11. A new method to study complex materials in solid state chemistry: application to chalcogenide materials

    Science.gov (United States)

    Lippens, P. E.; Olivier-Fourcade, J.; Jumas, J. C.

    1998-08-01

    We show that a combined application of Mössbauer spectroscopy and other experimental tools such as X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and nuclear magnetic resonance provides a coherent picture of the local electronic structure in chalcogenide materials. In order to develop this idea we propose an analysis of the Sn, Sb and Te local electronic structures for three different systems of materials. The first example concerns the In Sn S system. We show that Li insertion in In16Sn4S32 leads to changes of the Sn oxidation states from Sn(IV) to Sn(II). The second example concerns materials of the Tl Sb S system. We show that variations of the 121Sb Mössbauer isomer shift and surface of the first peak of the X-ray absorption spectra at the Sb LIII edge can be linearly correlated because of the main influence of the Sb 5s electrons. This is explained by changes in the local environment of the Sb atoms. The last example concerns the crystalline phases of the Tl Sn Te system. The formal oxidation numbers of the Te atoms are determined from 125Te Mössbauer spectroscopy and X-ray photoelectron spectroscopy. They are related to the different types of bonds involving the Te atoms in the Tl Sn Te compounds.

  12. Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

    Science.gov (United States)

    Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

    2016-05-04

    As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes.

  13. Pressure induced stiffening, thermal softening of bulk modulus and brittle nature of mercury chalcogenides

    Science.gov (United States)

    Varshney, Dinesh; Shriya, Swarna; Sapkale, Raju; Varshney, Meenu; Ameri, M.

    2015-07-01

    The pressure and temperature dependent elastic properties of mercury chalcogenides (HgX; X = S, Se and Te) with pressure induced structural transition from ZnS-type (B3) to NaCl-type (B1) structure have been analyzed within the framework of a model interionic interaction potential with long-range Coulomb and charge transfer interactions, short-range overlap repulsion and van der Waals (vdW) interactions as well as zero point energy effects. Emphasis is on the evaluation of the Bulk modulus with pressure and temperature dependency to yield the Poisson's ratio ν, the Pugh ratio ϕ, anisotropy parameter, Shear and Young's modulus, Lamé's constant, Klein man parameter, elastic wave velocity and Debye temperature. The Poisson's ratio behavior infers that HgX are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations.

  14. Carbon supported ruthenium chalcogenide as cathode catalyst in a microfluidic formic acid fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Gago, A.S.; Alonso-Vante, N. [Laboratory of Electrocatalysis, UMR-CNRS 6503, Universite de Poitiers, 40 Avenue du Recteur Pineau, F-86022 Potiers Cedex (France); Morales-Acosta, D.; Arriaga, L.G. [Centro de Investigacion y Desarrollo Tecnologico en Electroquimica, S.C. Parque Tecnologico Queretaro Sanfandila, P.O. Box 064, Pedro Escobedo, 76703, Queretaro (Mexico)

    2011-02-01

    This work reports the electrochemical measurements of 20 wt.% Ru{sub x}Se{sub y}/C for oxygen reduction reaction (ORR) in presence of different concentration of HCOOH and its use as cathode catalyst in a microfluidic formic acid fuel cell ({mu}FAFC). The results were compared to those obtained with commercial Pt/C. Half-cell electrochemical measurements showed that the chalcogenide catalyst has a high tolerance and selectivity towards ORR in electrolytes containing up to 0.1 M HCOOH. The depolarization effect was higher on Pt/C than on Ru{sub x}Se{sub y}/C by a factor of ca. 23. Both catalysts were evaluated as cathode of a {mu}FAFC operating with different concentrations of HCOOH. When 0.5 M HCOOH was used, maximum current densities of 11.44 mA cm{sup -2} and 4.44 mA cm{sup -2} were obtained when the cathode was Ru{sub x}Se{sub y}/C and Pt/C, respectively. At 0.5 M HCOOH, the peak power density of the {mu}FAFC was similar for both catalysts, ca. 1.9 mW cm{sup -2}. At 5 M HCOOH the power density of the {mu}FAFC using Ru{sub x}Se{sub y}, was 9.3 times higher than the obtained with Pt/C. (author)

  15. Photoelectric properties of defect chalcogenide HgGa2X4 (x=S, Se, Te)

    Science.gov (United States)

    Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini

    2016-05-01

    We present results of ab initio study of ordered vacancy compounds of mercury. The electronic structure, charge density, optical and transport properties of the semiconductor family HgGa2X4 (X=S, Se, Te) are calculated using the full potential linearized augmented plane wave method which is based on the density functional theory. A direct bandgap is observed in these compounds, which reduces in the order S>Se>Te. From the density of states it is observed that there is strong hybridization of Hg-d, Ga-d and X-p states. The optical properties show a red shift with increasing size and atomic no. of the chalcogenide atoms. We have also reported the transport properties of mercury thiogallates for the first time. The selenide compound exhibits n-type nature whereas HgGa2S4 and HgGa2Te4 show p-type behavior. The power factor and ZT for the HGS increases at low temperatures, the figure of merit is highest for HgGa2Se4 (1.17) at 19 K.

  16. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    Science.gov (United States)

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-01

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

  17. Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jaegermann, W.; Pettenkofer, C.; Lang, O.; Schlaf, R.; Tiefenbacher, S.; Tomm, Y. [Hahn-Meitner-Inst., Berlin (Germany)

    1994-12-31

    The preparation of thin films of layered chalcogenide semiconductors as MX and MX{sub 2} (X = S, Se) based on the concept of van der Waals epitaxy (VDWE) is presented for different substrate/overlayer combinations as GaSe, InSe, SnSe{sub 2}, WS{sub 2} on WSe{sub 2}, GaSe, MoTe{sub 2}, graphite and mica. In all cases stoichiometric films are formed either as epitaxial layers or strongly textured films with the c-axis aligned in spite of strong lattice mismatch. The interfaces are non-reactive and atomically abrupt. The electronic properties of the interfaces are mostly ideal showing band offsets according to the electron affinity rule and no operative interface states. However, doping of the films is still a problem which limits the band bending and the attainable surface photovoltage. The perspectives and preconditions for the further development of layered semiconductor VDWE films for solar cells will be critically discussed.

  18. Magnetoresistance and electrical properties of multi-component copper chalcogenides at pressures up to 50 GPa

    Science.gov (United States)

    Melnikova, Nina; Tebenkov, Alexander; Babushkin, Alexey; Kurochka, Kirill; Phase Transitions Team; Transport Properties Team; Novel Materials Team

    2013-06-01

    Multi-component chalcogenides based on layered semiconductors A3B6 (such as InS, InSe, GaS, GaSe, etc) are new objects of study, they have interesting physical properties and undergo temperature and baric phase transitions. This paper presents the results of a study of the electrical properties and magnetoresistance of CuInS2, CuInSe2, CuInAsS3, CuInAsSe3, CuInSbS3 at pressures up to 50 GPa. High pressures have been generated in the cell with synthetic carbonado-type diamond anvils that can be used as electric contacts. Electric properties at high pressure have been investigated on dc current and by means of impedance spectroscopy. Magnetoresistance has been measured in transverse magnetic field. The pressure ranges of noticeable changes in a behavior of magnetoresistance, of impedance and admittance, tangent of loss angle, relaxation time upon a pressure increase and a pressure decrease are established. This behavior of physical parameters can be due to structural transitions and due to a change of electron structure. This work was supported in part by the Russian Foundation for Basic Research, project no. 13-02-00633.

  19. All-optical demultiplexing of 1.28~Tb/s to 10~Gb/s using a chalcogenide photonic chip

    DEFF Research Database (Denmark)

    Vo, T.D.; Hu, Hao; Galili, Michael;

    2010-01-01

    We report the first demonstration of all-optical Tbaud switching on a compact photonic chip. A 1.28 Tbaud return-to-zero signal was demultiplexed via four-wave mixing in a highly nonlinear, dispersion-engineered 7-cm Chalcogenide planar waveguide.......We report the first demonstration of all-optical Tbaud switching on a compact photonic chip. A 1.28 Tbaud return-to-zero signal was demultiplexed via four-wave mixing in a highly nonlinear, dispersion-engineered 7-cm Chalcogenide planar waveguide....

  20. A first principles study of phase stability, bonding, electronic and lattice dynamical properties of beryllium chalcogenides at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar 364001 (India); Mankad, Venu [Central Institute of Plastic Engineering and Technology, Ahmedabad (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390002 (India)

    2014-12-25

    Highlights: • First principles calculations are performed for BeS, BeSe and BeTe in B3, B8 and B1 phases. • They are indirect wide band gap semiconductors stable in B3 phase at ambient condition. • Phonon calculations at ambient and high pressure are reported. • The NiAs phase is dynamically stable at high pressure. - Abstract: The present paper reports a detailed and systematic theoretical study of structural, mechanical, electronic, vibrational and thermodynamical properties of three beryllium chalcogenides BeS, BeSe and BeTe in zinc blende, NiAs and rock salt phases by performing ab initio calculations based on density-functional theory. The calculated value of lattice constants and bulk modulus are compared with the available experimental and other theoretical data and found to agree reasonably well. These compounds are indirect wide band gap semiconductors with a partially ionic contribution in all considered three phases. The zinc blende phase of these chalcogenides is found stable at ambient condition and phase transition from zinc blende to NiAs structure is found to occur. The bulk modulus, its pressure derivative, anisotropic factor, Poission’s ratio, Young’s modulus for these are also calculated and discussed. The phonon dispersion curves of these beryllium chalcogenides in zinc blende phase depict their dynamical stability in this phase at ambient condition. We have also estimated the temperature variation of specific heat at constant volume, entropy and Debye temperature for these compounds in zinc blende phase. The variation of lattice-specific heat with temperature obeys the classical Dulong–Petit’s law at high temperature, while at low-temperature it obeys the Debye’s T{sup 3} law.

  1. Ultrafast laser fabrication of low-loss waveguides in chalcogenide glass with 0.65 dB/cm loss.

    Science.gov (United States)

    McMillen, Ben; Zhang, Botao; Chen, Kevin P; Benayas, Antonio; Jaque, Daniel

    2012-05-01

    This Letter reports on the fabrication of low-loss waveguides in gallium-lanthanum-sulfide chalcogenide glasses using an ultrafast laser. Spatial beam shaping and temporal pulse width tuning were used to optimize the guided mode profiles and optical loss of laser-written waveguides. Highly symmetric single-mode waveguides guiding at 1560 nm with a loss of 0.65  dB/cm were fabricated using 1.5 ps laser pulses. This Letter suggests a pathway to produce high quality optical waveguides in substrates with strong nonlinearity using the ultrafast laser direct writing technique.

  2. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil;

    2016-01-01

    Broadband (1.6-18 THz) terahertz time-domain spectroscopy (THz-TDS) and time-resolved terahertz spectroscopy (TRTS) were performed on a 54 mu m thick chalcogenide glass (As30Se30Te40) sample with a two-color laser-induced air plasma THz system in transmission and reflection modes, respectively. Two...... absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

  3. Demonstration of CO2-laser power delivery through chalcogenide-glass fiber with negative-curvature hollow core.

    Science.gov (United States)

    Kosolapov, Alexey F; Pryamikov, Andrey D; Biriukov, Alexander S; Shiryaev, Vladimir S; Astapovich, Maxim S; Snopatin, Gennady E; Plotnichenko, Victor G; Churbanov, Mikhail F; Dianov, Evgeny M

    2011-12-05

    A technologically simple optical fiber cross-section structure with a negative-curvature hollow-core has been proposed for the delivery of the CO2 laser radiation. The structure was optimized numerically and then realized using Te20As30Se50 (TAS) chalcogenide glass. Guidance of the 10.6 µm СО2-laser radiation through this TAS-glass hollow-core fiber has been demonstrated. The loss at λ=10.6 μm was amounted ~11 dB/m. A resonance behavior of the fiber bend loss as a function of the bend radius has been revealed.

  4. Ultrafast spectroscopic investigations of cadmium chalcogenides: Nanoscale electronic relaxation and transfer

    Science.gov (United States)

    Spann, Bryan Thomas

    Harnessing solar energy more effectively remains one of the most important scientific challenges in recent history. Various strategies have been developed to capture the sun's energy to generate usable electricity. Recently, advances in chemistry have allowed researchers to synthesize semiconducting nanocrystals which show great promise in capturing and converting solar energy in a cheap and efficient way. In this dissertation, aspects of energy conversion processes in semiconducting nanocrystals are explored to elucidate their potential for photovoltaic applications. Various forms of linear and non-linear optical spectroscopy techniques were employed to explore electronic relaxation and transfer phenomena in nanoscale cadmium chalcogenide materials and heterojunctions. Ultrafast transient absorption studies were performed on various sizes of CdSe quantum dots (QDs) and quantum rods (QRs) with similar bandedge energies. These studies reviled that QRs have increased intraband relaxation times when compared with QDs as a result of an ultrafast formation of a 1D exciton along the elongated axis of the QR. The formation of the 1D exciton reduces the electron-to-hole scattering potential, consequently reducing the Auger thermalization mechanism. Furthermore, QD samples made in film form showed increased intraband relaxation times as a result of a hydrazine treatment which removed (in part) the organic ligands attached to the surface. As a result of removing the ligands, the ligand based relaxation pathway for the holes was also reduced, causing longer intraband relaxation. In addition to the studies on CdSe nanocrystals (NCs), ultrafast spectroscopy was used to study aspects of charge transfer in CdS -- TiO2 NC heterojunctions. This study revealed a means of increasing photo-induced ultrafast charge transfer in successive ionic layer adsorption and reaction (SILAR) CdS--TiO2 NC heterojunctions using pulsed laser sintering of TiO2 nanocrystals. The enhanced charge

  5. Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

    Science.gov (United States)

    Lin, Qianglu

    Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum

  6. Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Adam, Adam Abdalla Elbashir [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China); Alneelain University, Faculty of Science and Technology, Khartoum (Sudan); Cheng, Xiaomin; Guan, Xiawei; Miao, Xiangshui [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China)

    2014-12-15

    In this work, an effective method to modulate the ferromagnetic properties of Mn-doped GeTe chalcogenide-based phase change materials is presented. The microstructure of the phase change magnetic material Ge{sub 1-x} Mn{sub x} Te thin films was studied. The X-ray diffraction results demonstrate that the as-deposited films are amorphous, and the crystalline films are formed after annealing at 350 C for 10 min. Crystallographic structure investigation shows the existence of some secondary magnetic phases. The lattice parameters of Ge{sub 1-x} Mn{sub x} Te (x = 0.04, 0.12 and 0.15) thin films are found to be slightly different with changes of Mn compositions. The structural analysis clearly indicates that all the films have a stable rhombohedral face-centered cubic polycrystalline structure. The magnetic properties of the amorphous and crystalline Ge{sub 0.96}Mn{sub 0.04}Te were investigated. The measurements of magnetization (M) as a function of the magnetic field (H) show that both amorphous and crystalline phases of Ge{sub 0.96}Mn{sub 0.04}Te thin film are ferromagnetic and there is drastic variation between amorphous and crystalline states. The temperature (T) dependence of magnetizations at zero field cooling (ZFC) and field cooling (FC) conditions of the crystalline Ge{sub 0.96}Mn{sub 0.04}Te thin film under different applied magnetic fields were performed. The measured data at 100 and 300 Oe applied magnetic fields show large bifurcations in the ZFC and FC curves while on the 5,000 Oe magnetic field there is no deviation. (orig.)

  7. Microorganism mediated biosynthesis of metal chalcogenides; a powerful tool to transform toxic effluents into functional nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Vena, M. Paula; Jobbágy, Matías; Bilmes, Sara A., E-mail: sarabil@qi.fcen.uba.ar

    2016-09-15

    Cadmium contained in soil and water can be taken up by certain crops and aquatic organisms and accumulate in the food-chain, thus removal of Cd from mining or industrial effluents – i.e. Ni-Cd batteries, electroplating, pigments, fertilizers – becomes mandatory for human health. In parallel, there is an increased interest in the production of luminescent Q-dots for applications in bioimaging, sensors and electronic devices, even the present synthesis methods are economic and environmentally costly. An alternative green pathway for producing Metal chalcogenides (MC: CdS, CdSe, CdTe) nanocrystals is based on the metabolic activity of living organisms. Intracellular and extracellular biosynthesis of can be achieved within a biomimetic approach feeding living organisms with Cd precursors providing new routes for combining bioremediation with green routes for producing MC nanoparticles. In this mini-review we present the state-of-the-art of biosynthesis of MC nanoparticles with a critical discussion of parameters involved and protocols. Few existing examples of scaling-up are also discussed. A modular reactor based on microorganisms entrapped in biocompatible mineral matrices – already proven for bioremediation of dissolved dyes – is proposed for combining both Cd-depletion and MC nanoparticle's production. - Highlights: • Removal of heavy metals by living matter is feasible trough biosorption and bioaccumulation • Algae, fungi, bacteria and yeasts can synthesize CdS, CdSe and CdTe Q-dots • Encapsulation of microorganisms in mineral gels provides building blocks for reactor design. • Depletion of Cd with production of Q-dots can be achieved with modular bioreactors with entrapped cells.

  8. Two new ternary lanthanide antimony chalcogenides: Yb4Sb2S11.25 and Tm4Sb2Se11.68 containing chalcogenide Q2- and dichalcogenide (Q2)2- anions

    Science.gov (United States)

    Babo, Jean-Marie; Albrecht-Schmitt, Thomas E.

    2012-03-01

    Dark red and dark brown crystals of Yb4Sb2S11.25 and Tm8Sb4Se11.68, respectively, were obtained from the reaction of the elements in Sb2Q3 (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q2- and dichalcogenide (Q2)2- anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb4Sb2S11.25 and Tm4Sb2Se11.75, respectively.

  9. Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, Oleh [Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, 42200, Czestochowa (Poland); Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Filipecki, Jacek [Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Shpotyuk, Mykhaylo [Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Department of Semiconductor Electronics, Lviv Polytechnic National University, Bandery str. 12, 79013 Lviv (Ukraine)

    2013-01-15

    Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As{sub 2}S{sub 3} chalcogenide glassy semiconductors after {gamma}-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As{sub 4}{sup +}; S{sub 1}{sup -}) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As{sub 2}S{sub 3} is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Effect of Sn doping on nonlinear optical properties of quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-08-01

    The aim of this work is to report the effect of Sn doping on the third order nonlinear optical properties of chalcogenide Se84-xTe15Bi1.0Snx thin films. Melt quenching technique has been used for the preparation of bulk chalcogenide glasses. Thin films of the studied composition are deposited on cleaned glass substrate by thermal evaporation technique. Optical band gap (Eg) is calculated by using Tauc extrapolation method and is found to increase from 1.27 eV to 1.64 eV with the incorporation of Sn content. Stryland approach is utilized for the calculation of two photon absorption coefficient (β2). The nonlinear refractive index (n2) and third order susceptibility (χ(3) are calculated using Tichy and Ticha approach. The result shows that nonlinear refractive index (n2) follows the same trend as that of linear refractive index (n). The values of n2 of studied composition as compared to pure silica are 1000-5000 times higher.

  11. First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

    Science.gov (United States)

    Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D.

    2016-08-01

    Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger [Phys. Rev. Lett. 108, 068701 (2012)] is used as a metric for the screening. After constructing the current-voltage curve, the SLME is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with II = Cd and Hg, and Cu2-II-SnS4 with II = Cd, Hg, and Zn have a higher theoretical efficiency compared with the materials currently used as absorber layer.

  12. Nonlinear Label-Free Biosensing With High Sensitivity Using As2S3 Chalcogenide Tapered Fiber

    DEFF Research Database (Denmark)

    Markos, Christos; Bang, Ole

    2015-01-01

    We demonstrate an experimentally feasible fiber design, which can act as a highly sensitive, label-free, and selective biosensor using the inherent high nonlinearity of an As2S3 chalcogenide tapered fiber. The surface immobilization of the fiber with an antigen layer can provide the possibility t......, this high sensitivity can be obtained using a low-power 1064-nm microchip laser....

  13. GeS2-In2S3-CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence.

    Science.gov (United States)

    Li, Legang; Bian, Junyi; Jiao, Qing; Liu, Zijun; Dai, Shixun; Lin, Changgui

    2016-11-21

    Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm(3+), Er(3+), and Dy(3+)) doped 65GeS2-25In2S3-10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides the luminescence spectra of a full near- and mid-IR spectral range from 1 to 4 μm in rare earth ions doped chalcogenide glasses. The results of absorption spectra, luminescence spectra, and fluorescence decay curves were obtained in these samples with singly-, co- and triply-doping behaviors of Tm(3+), Er(3+), and Dy(3+) ions. In order to search possible efficient IR emissions, the luminescence behavior was investigated specifically with the variation of doping behaviors and dopant ions, especially in the samples co- and triply-doped active ions. The results suggest that favorable near- and mid-IR luminescence of rare earth ions can be further modified in chalcogenide glasses through an elaborated design of doping behavior and optically active ions.

  14. GeS2–In2S3–CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence

    Science.gov (United States)

    Li, Legang; Bian, Junyi; Jiao, Qing; Liu, Zijun; Dai, Shixun; Lin, Changgui

    2016-11-01

    Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm3+, Er3+, and Dy3+) doped 65GeS2–25In2S3–10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides the luminescence spectra of a full near- and mid-IR spectral range from 1 to 4 μm in rare earth ions doped chalcogenide glasses. The results of absorption spectra, luminescence spectra, and fluorescence decay curves were obtained in these samples with singly-, co- and triply-doping behaviors of Tm3+, Er3+, and Dy3+ ions. In order to search possible efficient IR emissions, the luminescence behavior was investigated specifically with the variation of doping behaviors and dopant ions, especially in the samples co- and triply-doped active ions. The results suggest that favorable near- and mid-IR luminescence of rare earth ions can be further modified in chalcogenide glasses through an elaborated design of doping behavior and optically active ions.

  15. Thulium pumped mid-infrared 0.9–9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers

    DEFF Research Database (Denmark)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech;

    2014-01-01

    We theoretically demonstrate a novel approach for generating Mid-InfraRed SuperContinuum (MIR SC) by using concatenated fluoride and chalcogenide glass fibers pumped with a standard pulsed Thulium (Tm) laser (TFWHM=3.5ps, P0=20kW, νR=30MHz, and Pavg=2W). The fluoride fiber SC is generated in 10m ...

  16. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  17. Electron-phonon coupling and structural phase transitions in early transition metal oxides and chalcogenides

    Science.gov (United States)

    Farley, Katie Elizabeth

    Pronounced nonlinear variation of electrical transport characteristics as a function of applied voltage, temperature, magnetic field, strain, or photo-excitation is usually underpinned by electronic instabilities that originate from the complex interplay of spin, orbital, and lattice degrees of freedom. This dissertation focuses on two canonical materials that show pronounced discontinuities in their temperature-dependent resistivity as a result of electron---phonon and electron---electron correlations: orthorhombic TaS3 and monoclinic VO2. Strong electron-phonon interactions in transition metal oxides and chalcogenides results in interesting structural and electronic phase transitions. The properties of the material can be changed drastically in response to external stimuli such as temperature, voltage, or light. Understanding the influence these interactions have on the electronic structure and ultimately transport characteristics is of utmost importance in order to take these materials from a fundamental aspect to prospective applications such as low-energy interconnects, steep-slope transistors, and synaptic neural networks. This dissertation describes synthetic routes to nanoscale TaS3 and VO2, develops mechanistic understanding of their electronic instabilities, and in the case of the latter system explores modulation of the electronic and structural phase transition via the incorporation of substitutional dopant atoms. We start in chapter 2 with a detailed study of the synthesis and electronic transport properties of TaS3, which undergoes a Peierls' distortion to form a charge density wave. Scaling this material down to the nanometer-sized regime allows for interrogation of single or discrete phase coherent domains. Using electrical transport and broad band noise measurements, the dynamics of pinning/depinning of the charge density wave is investigated. Chapter 3 provides a novel synthetic approach to produce high-edge-density MoS2 nanorods. MoS2 is a

  18. Chalcogenide glass mid-infrared on-chip sensor for chemical sensing

    Science.gov (United States)

    Lin, Hongtao

    Chemical sensing in the mid-infrared (mid-IR) has been considered to be significant for molecular detection for decades, but until recently has mostly relied on benchtop spectroscopic instruments like Fourier transform infrared spectrometers, etc. Recent strides in planar photonic integration envision compact, standalone "sensor-on-a-chip" devices for molecular analysis as a potentially disruptive technology as compared to their conventional bulky counterparts. However, the difficulty of achieving adequate sensitivity in integrated optical sensors is still a key barrier towards their practical application, limited by the weak interactions between photons and molecules over the short optical path length accessible on a chip. To solve the sensitivity challenge, a novel mid-IR photothermal spectroscopic sensing technique was proposed and theoretically examined. Through dramatically amplified photothermal effects in an optical nano-cavity doubly resonant at both mid-IR pump and near infrared probe wavelengths, a device design based on nested 1-D nanobeam photonic crystal cavities is numerically analyzed to demonstrate the technique's potential for single small gas molecule detection without the need for cryogenically cooled mid-IR photo-detectors. Furthermore, since silica becomes opaque at wavelengths beyond 3.5 microm, new material platforms and fabrication techniques are needed for mid-IR on-chip chemical sensors. Chalcogenide glasses (ChG), amorphous compounds containing S, Se and Te, are ideal material choices for mid-IR chemical sensors given their broad mid-IR transparency window, large photothermal figure-of-merit, amorphous structure and low processing temperature. A ChG lift-off process and a nano-fabrication technique using focused ion beam milling have been developed to fabricate mid-IR ChG resonators and photonic crystal waveguide cavities. ChG resonators on CaF2 substrate claimed a high quality factor around 4 x 105. Using these devices, we have also

  19. Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

  20. Spin dynamics of complex oxides, bismuth-antimony alloys, and bismuth chalcogenides

    Science.gov (United States)

    Sahin, Cuneyt

    V, suggesting the potential for doping or voltage tuned spin Hall current. We have also calculated intrinsic spin Hall conductivities of bismuth selenide and bismuth telluride topological insulators from an effective tight-binding Hamiltonian including two nearest-neighbor interactions. We showed that both materials exhibit giant spin Hall conductivities calculated from the Kubo formula in linear response theory and the clean static limit. We conclude that bismuth-antimony alloys and bismuth chalcogenides are primary candidates for efficiently generating spin currents through the spin Hall effect.

  1. KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

    KAUST Repository

    Ahmed, Ejaz

    2015-01-01

    The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

  2. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-11-21

    Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

  3. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  4. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  5. Extended free-volume defects in chalcogenide glassy semiconductors induced by high-energy {gamma}-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, Valentina [Lviv Institute of Materials of SRC (Ukraine); State University of Vital Activity Safety, Lviv 79007 (Ukraine); Filipecki, Jacek; Shpotyuk, Oleh [Institute of Physics, Jan Dlugosz University, Czestochowa (Poland)

    2009-08-15

    It was shown that under-coordinated topological defects induced by high-energy {gamma}-irradiation can be a reason for significant changes in positron annihilation lifetime spectra of multicomponent chalcogenide glassy semiconductors within ternary Ge-As(Sb)-S systems. In the case of negatively-charged sulphur and arsenic atoms, the excess of free volume is quite enough to produce additional input in the second defect-related channel of positron trapping, while under-coordinated germanium atoms are practically non-detectable with this technique because of low associated free volume. Despite radiation-induced densification, the average positron lifetime demonstrate both growing and decaying tendencies after {gamma}-irradiation depending on glass composition. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Characterization of the optical constants and dispersion parameters of chalcogenide Te40Se30S30 thin film: thickness effect

    Science.gov (United States)

    Abd-Elrahman, M. I.; Hafiz, M. M.; Qasem, Ammar; Abdel-Rahim, M. A.

    2016-02-01

    Chalcogenide Te40Se30S30 thin films of different thickness (100-450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.

  7. Experimental versus expected halide-ion size differences; structural changes in three series of isotypic bismuth chalcogenide halides.

    Science.gov (United States)

    Keller, Egbert; Krämer, Volker

    2006-06-01

    Experimentally determined halide-ion size differences are compared with expected size differences in the three series of isotypic bismuth chalcogenide halide compounds, KBi(6)O(9)X (X = Cl, Br and I), BiOX (X = F, Cl, Br and I) and BiSX (X = Cl, Br and I). The strong deviations observed can be assigned to steric strain caused by the heterogeneity of the bond-valence pattern and (for BiOX) to anion-anion repulsion and a change in the connectivity scheme. Some special features of the BiOF structure and the question of "isotypism" within the BiOX series are briefly discussed. Structural changes within the BiSX series are analysed.

  8. A Tapered Chalcogenide Microstructured Optical Fiber for Mid-IR Parabolic Pulse Generation: Design and Performance Study

    CERN Document Server

    Barh, Ajanta; Varshney, Ravi K; Pal, Bishnu P

    2013-01-01

    This paper presents a theoretical design of chalcogenide glass based tapered microstructured optical fiber (MOF) to generate high power parabolic pulses (PPs) at the mid-IR wavelength (~ 2 {\\mu}m). We optimize fiber cross-section by the multipole method and studied pulse evolution by well known Symmetrized Split-Step Fourier Method. Our numerical investigation reveals the possibility of highly efficient PP generation within a very short length (~ 18 cm) of this MOF for a Gaussian input pulse of 60 W peak power and FWHM of 3.5 ps. We examined quality of the generated PP by calculating the misfit parameter including the third order dispersion and fiber loss. Further, the effects of variations in input pulse power, pulse width and pulse energy on generated PP were also studied.

  9. Temperature dependence of magnetic anisotropy constant in iron chalcogenide Fe3Se4: Excellent agreement with theories

    Science.gov (United States)

    Wang, Jun; Duan, Hongyan; Lin, Xiong; Aguilar, Victor; Mosqueda, Aaron; Zhao, Guo-meng

    2012-01-01

    Magnetic hysteresis loops were measured for ferrimagnetic iron chalcogenide Fe3Se4 nanoparticles in the whole temperature range below the Curie temperature TC (315 K). The coercivity of the material is huge, reaching about 40 kOe at 10 K. The magnetic anisotropy constant K was determined from the magnetic hysteresis loop using the law of approach to saturation. The deduced anisotropy constant at 10 K is 5.22×106 erg/cm3, which is over one order of magnitude larger than that of Fe3O4. We also demonstrated that the experimental magnetic hysteresis loop is in good agreement with the theoretical curve calculated by Stoner and Wohlfarth for a noninteracting randomly oriented uniaxial single-domain particle system. Moreover, we show that K is proportional to the cube of the saturation magnetization Ms, which confirms earlier theoretical models for uniaxial magnets. PMID:23258940

  10. Temperature dependence of magnetic anisotropy constant in iron chalcogenide Fe(3)Se(4): Excellent agreement with theories.

    Science.gov (United States)

    Wang, Jun; Duan, Hongyan; Lin, Xiong; Aguilar, Victor; Mosqueda, Aaron; Zhao, Guo-Meng

    2012-11-15

    Magnetic hysteresis loops were measured for ferrimagnetic iron chalcogenide [Formula: see text] nanoparticles in the whole temperature range below the Curie temperature [Formula: see text] (315 K). The coercivity of the material is huge, reaching about 40 kOe at 10 K. The magnetic anisotropy constant K was determined from the magnetic hysteresis loop using the law of approach to saturation. The deduced anisotropy constant at 10 K is [Formula: see text], which is over one order of magnitude larger than that of [Formula: see text]. We also demonstrated that the experimental magnetic hysteresis loop is in good agreement with the theoretical curve calculated by Stoner and Wohlfarth for a noninteracting randomly oriented uniaxial single-domain particle system. Moreover, we show that K is proportional to the cube of the saturation magnetization [Formula: see text], which confirms earlier theoretical models for uniaxial magnets.

  11. The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition.

    Science.gov (United States)

    Vorobiev, Yuri V; Horley, Paul P; Hernández-Borja, Jorge; Esparza-Ponce, Hilda E; Ramírez-Bon, Rafael; Vorobiev, Pavel; Pérez, Claudia; González-Hernández, Jesús

    2012-08-29

    This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data.

  12. High-precision measurements of the compressibility of chalcogenide glasses at a hydrostatic pressure up to 9 GPa

    Science.gov (United States)

    Brazhkin, V. V.; Bychkov, E.; Tsiok, O. B.

    2016-08-01

    The volumes of glassy germanium chalcogenides GeSe2, GeS2, Ge17Se83, and Ge8Se92 are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe2 and GeS2 glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2-2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe2 glasses has a pronounced maximum at 3.5-4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms. The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1-2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe2 glasses. All glasses are characterized by the "loss of memory" of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge17Se83 glasses is 1.5%. The volume of the Ge8Se92 glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge17Se83 and Ge8Se92 glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe2 glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.

  13. Synthesis and solid state structures of Chalcogenide compounds of Imidazolin-2-ylidene-1,1-Diphenyl-phosphinamine

    Indian Academy of Sciences (India)

    Naktode Kishor; Suman Das; Abhinanda Kundu; Hari Pada Nayek; Tarun K Panda

    2016-03-01

    We report the synthesis and solid state structures of 1,3-di-aryl-imidazolin-2-ylidine-1,1-diphenylphosphinamine [(aryl=mesityl (1a) and aryl=2,6-diisopripyl (1b)] and their chalcogenide compounds 3-di-aryl-imidazolin-2-ylidine-P, P-diphenylphosphinicamide (2a,b), 1,3-di-aryl-imidazolin-2-ylidine-P,P diphenyl-phosphinothioicamide (3a,b) and 1,3-diaryl-imidazolin-2-ylidine-P,P -diphenyl-phosphinoselenoicamide (4a,b).The compounds 1a,b were prepared in good yield by the reaction of 1,3-di-aryl-imidazolin-2-imine and chlorodiphenylphosphine in the presence of triethylamine in toluene. The reactions of 1a,b with elemental sulphur and selenium afforded the corresponding chalcogenide compounds 3a,b and 4a,b respectively.The corresponding oxo- derivative (2a,b) was obtained by reacting compound 1a,b with 30% aqueous hydrogen peroxide in THF. The molecular structures of 1a, 2a, 3a and 4a,b have been established by single crystal X-ray diffraction analyses. The molecular structures reveal that even C1–N1–P1 angle (124.62o) in compound 1a is less obtuse compared to the corresponding C1–N1–Si1 angles (157.8o) observed in related N-silylated 2-iminoimidazolines and trimethylsilyl iminophosphoranes. C1–N1–P1 angles are further widened in compounds 2a, 3a, and 4a,b due to the attachment of chalcogen atoms onto phosphorus atom.

  14. A structural study of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure

    CERN Document Server

    Kozlenko, D P; Hull, S; Knorr, K; Savenko, B N; Shchennikov, V V; Voronin, V I

    2002-01-01

    The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e sub 4. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

  15. Mid-infrared supercontinuum generation in a three-hole Ge20Sb15Se65 chalcogenide suspended-core fiber

    Science.gov (United States)

    Han, Xin; You, Chenyang; Dai, Shixun; Zhang, Peiqing; Wang, Yingying; Guo, Fangxia; Xu, Dong; Luo, Baohua; Xu, Peipeng; Wang, Xunsi

    2017-03-01

    This work experimentally demonstrates the supercontinuum (SC) generation in a three-hole arsenic free Ge20Sb15Se65 chalcogenide suspended-core fiber. Mechanical drilling was used to prepare the chalcogenide glass preform, which was drawn into suspended-core fibers. The zero-dispersion wavelength of the fiber is moved toward the shorter wavelength of about 3.2 μm through changing the fiber core diameter by controlling the pressure of inert gas during fiber drawing. When a 15 cm-long fiber with a core diameter of 6 μm is pumped using 150 fs pulses at 3.3 μm, SC spanning from ∼3 μm to ∼8 μm was generated.

  16. Universal behavior of chalcogenides of rare-earth metals in the transition to a state with intermediate valence at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Tsiok, O. B.; Khvostantsev, L. G.; Brazhkin, V. V., E-mail: brazhkin@hppi.troitsk.ru [Russian Academy of Sciences, Vereshchagin Institute of High-Pressure Physics (Russian Federation)

    2015-06-15

    Precision measurements of resistivity, thermopower, and volume are performed for TmS, TmSe, and TmTe under a hydrostatic pressure up to 8 GPa. Comparison of the transport properties and volume of TmTe and SmTe in the valence transition region demonstrates a complete analogy up to quantitative coincidence. It is shown that the thermopower of all thulium and samarium chalcogenides in the lattice collapse region and in subsequent rearrangement of the electron spectrum in a wide range of pressures follow a universal dependence corresponding the passage of the Fermi level through the peak of the density of states (DOS). The results are considered in the context of ideas about the exciton nature of the intermediate valence in chalcogenides of rare-earth metals.

  17. Thulium pumped mid-infrared 0.9-9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers.

    Science.gov (United States)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech; Seddon, Angela; Benson, Trevor; Brilland, Laurent; Méchin, David; Moselund, Peter M; Bang, Ole

    2014-02-24

    We theoretically demonstrate a novel approach for generating Mid-InfraRed SuperContinuum (MIR SC) by using concatenated fluoride and chalcogenide glass fibers pumped with a standard pulsed Thulium (Tm) laser (T(FWHM)=3.5ps, P0=20kW, ν(R)=30MHz, and P(avg)=2W). The fluoride fiber SC is generated in 10m of ZBLAN spanning the 0.9-4.1μm SC at the -30dB level. The ZBLAN fiber SC is then coupled into 10cm of As2Se3 chalcogenide Microstructured Optical Fiber (MOF) designed to have a zero-dispersion wavelength (λ(ZDW)) significantly below the 4.1μm InfraRed (IR) edge of the ZBLAN fiber SC, here 3.55μm. This allows the MIR solitons in the ZBLAN fiber SC to couple into anomalous dispersion in the chalcogenide fiber and further redshift out to the fiber loss edge at around 9μm. The final 0.9-9μm SC covers over 3 octaves in the MIR with around 15mW of power converted into the 6-9μm range.

  18. Single step preparation of quaternary Cu2ZnSnSe4 thin films by RF magnetron sputtering from binary chalcogenide targets

    Science.gov (United States)

    Wibowo, Rachmat Adhi; Kim, Woo Seok; Lee, Eun Soo; Munir, Badrul; Kim, Kyoo Ho

    2007-10-01

    Cu2ZnSnSe4 (CZTSe) thin films were grown in a single step procedure by RF magnetron sputtering from a compacted powder consisting of blended chalcogenides. Targets with various chalcogenide mole ratios were designed for the purpose of preparing stoichiometric as-grown films. The material concentrations of the films grown at room temperature were found to depend on the mole ratio of the chalcogenides in the targets. It was found that a significant deviation of material concentration of the films from ideal stoichiometry led to the formation of CuSe, ZnSe and SnSe secondary phases. CZTSe films with a stannite phase could be grown even at room temperature from the sputtering target containing Cu2Se with corresponding growth orientations of (101), (112), (220/204), (312/116) and (332/316). The p-type CZTSe film grown at a substrate temperature of 150C showed a high absorption coefficient of 10cm with an optical band gap of 1.56 eV, resistivity as low as 1.482Ωcm and carrier concentration of 1×10cm. These results suggested that the control of the target compositions was crucial to grow single phase and stoichiometric quaternary CZTSe films.

  19. How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

    Science.gov (United States)

    Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

    2010-05-01

    Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

  20. Solution-based synthesis and design of late transition metal chalcogenide materials for oxygen reduction reaction (ORR).

    Science.gov (United States)

    Gao, Min-Rui; Jiang, Jun; Yu, Shu-Hong

    2012-01-09

    Late transition metal chalcogenide (LTMC) nanomaterials have been introduced as a promising Pt-free oxygen reduction reaction (ORR) electrocatalysts because of their low cost, good ORR activity, high methanol tolerance, and facile synthesis. Herein, an overview on the design and synthesis of LTMC nanomaterials by solution-based strategies is presented along with their ORR performances. Current solution-based synthetic approaches towards LTMC nanomaterials include a hydrothermal/solvothermal approach, single-source precursor approach, hot-injection approach, template-directed soft synthesis, and Kirkendall-effect-induced soft synthesis. Although the ORR activity and stability of LTMC nanomaterials are still far from what is needed for practical fuel-cell applications, much enhanced electrocatalytic performance can be expected. Recent advances have emphasized that decorating the surface of the LTMC nanostructures with other functional nanoparticles can lead to much better ORR catalytic activity. It is believed that new synthesis approaches to LTMCs, modification techniques of LTMCs, and LTMCs with desirable morphology, size, composition, and structures are expected to be developed in the future to satisfy the requirements of commercial fuel cells.

  1. Optical characterization of thermally evaporated thin films of As40S40Se20 chalcogenide glass by reflectance measurements

    Science.gov (United States)

    Márquez, E.; González-Leal, J. M.; Prieto-Alcón, R.; Vlcek, M.; Stronski, A.; Wagner, T.; Minkov, D.

    Optical reflection spectra, at normal incidence, of ternary chalcogenide thin films of chemical composition As40S40Se20, deposited by thermal evaporation, were obtained in the 400 nm to 2200 nm spectral region. The optical constants of this amorphous material were computed using an optical characterization method based mainly on the ideas of Minkov and Swanepoel of utilising the upper and lower envelopes of the spectrum, which allows us to obtain both the real and imaginary parts of the complex refractive index, and the film thickness. Thickness measurements made by a surface-profiling stylus have been carried out to cross-check the results obtained by the optical method. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The optical band gap has been determined from absorption coefficient data by Tauc's procedure. Finally, the photo-induced and thermally induced changes in the optical properties of a-As40S40Se20 thin films were also studied, using both transmission and reflection spectra.

  2. A Versatile Strategy for Shish-Kebab-like Multi-heterostructured Chalcogenides and Enhanced Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Hu, Jianqiang; Liu, Aili; Jin, Huile; Ma, Dekun; Yin, Dewu; Ling, Pengsheng; Wang, Shun; Lin, Zhiqun; Wang, Jichang

    2015-09-01

    A series of multi-heterostructured metal chalcogenides (CdS-Te, NiS/CdS-Te, and MoS2/CdS-Te) with a surprising shish-kebab-like structure have been synthesized via a one-step microwave-assisted pyrolysis of dithiocarbamate precursors in ethylene glycol. Subsequently, CdS-Te composites were exploited as a self-sacrificial template to craft various CdS-Te@(Pt, Pd) multi-heterostructures. Highly uniform dispersion and intimate interactions between CdS and multicomponent cocatalysts, together with improved separation of photogenerated carriers due to the presence of Te nanotubes (NTs) and trace CdTe, enable CdS-based heterostructured photocatalysts to exhibit greatly enhanced efficiency and stability in the photocatalytic production of H2. Thorough morphological characterizations revealed that the growth of metal sulfide/Te heterostructures originates from the growth of Te tubes, which is likely governed by diffusion-limited depletion of the Te precursor and the dissolution-crystallization process of Te seeds followed by the formation of metal sulfide kebabs.

  3. Size-controlled Intercalation to Conversion Transition in Lithiation of Transition-Metal Chalcogenides – NbSe3

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Langli; Zhao, Benliang; Xiang, Bin; Wang, Chong M.

    2016-01-23

    Transition metal chalcogenides (TMCs) can either be used as intercalation cathodes or as conversion type anodes for lithium ion batteries, for which two distinctively different lithiation reaction mechanisms govern the electrochemical performance of TMCs. However, it remains elusive that what controls the transition of lithiation mechanisms. Herein, we investigated the lithiation process of NbSe3 ribbons using in situ transmission electron microscopy (TEM) and observed a size dependent transition from intercalation to conversion reaction. The large NbSe3 ribbons can accommodate high concentration of Li+ through intercalation by relaxing its internal spacing, while lithiation of small NbSe3 ribbons proceeds readily to full conversion reaction. We find that the size dependent variation of lithiation mechanism is attributed to the Li+ diffusion in NbSe3 and the accommodation of newly formed phases, i.e., insufficient Li+ diffusion and limited space for accommodating the volume expansion induced by forming new phases in large size ribbons both impede the intercalation-to-conversion transition. These results demonstrate the inherent structural instability of NbSe3 as an intercalation cathode and fast lithiation rate as a promising conversion type anode.

  4. Solvothermal and ionothermal syntheses and structures of amine- and/or (poly-)chalcogenide coordinated metal complexes

    Energy Technology Data Exchange (ETDEWEB)

    Thiele, Guenther; Santner, Silke; Donsbach, Carsten; Assmann, Maik; Mueller, Marcus; Dehnen, Stefanie [Marburg Univ. (Germany). Fachbereich Chemie und Wissenschaftliches Zentrum fuer Materialwissenschaften

    2014-10-01

    A series of five compounds, namely [Ba(trien){sub 2}]{sub 3}[SbSe{sub 4}]{sub 2}.trien (1) (trien=diethylenetriamine), [(Se{sub 3})Cr(en){sub 2}(Se{sub 2})Cr(en){sub 2}(Se{sub 3})]{sub 2} (2) (en=ethylenediamine), [(pren){sub 3} Eu(Te{sub 3}){sub 2} Eu(pren){sub 3}] (3) (pren=1,3-diaminopropane), [(en){sub 4} Ba(pren)Ba(en){sub 4}](Te{sub 3}){sub 2} (4) and [enH]{sub 4}[Sn{sub 2} Se{sub 6}] (5), which illustrate the transition of classical polychalcogenides to metalates, are presented, where mixed amine/(poly-)chalcogenide interaction with metal centers are in the focus of interest. A conventional aminothermal synthesis is discussed in comparison with ionothermal approaches. The compounds are considered useful precursors to study in situ interconversion of selenido- and telluridometalates under ionothermal conditions.

  5. Size-Controlled Intercalation-to-Conversion Transition in Lithiation of Transition-Metal Chalcogenides-NbSe3.

    Science.gov (United States)

    Luo, Langli; Zhao, Benliang; Xiang, Bin; Wang, Chong-Min

    2016-01-26

    Transition-metal chalcogenides (TMCs) can be used either as intercalation cathodes or as conversion-type anodes for lithium ion batteries, for which two distinctively different lithiation reaction mechanisms govern the electrochemical performance of TMCs. However, the factors that control the transition of lithiation mechanisms remain elusive. In this work, we investigated the lithiation process of NbSe3 ribbons using in situ transmission electron microscopy and observed a size-dependent transition from intercalation to the conversion reaction. Large NbSe3 ribbons can accommodate high concentrations of Li(+) through intercalation by relaxing their internal spacing, while lithiation of small NbSe3 ribbons proceeds readily to full conversion. We found that the size-dependent variation of the lithiation mechanism is associated with both Li(+) diffusion in NbSe3 and the accommodation of newly formed phases. For large NbSe3 ribbons, the intercalation-to-conversion transition is impeded by both long-range Li(+) diffusion and large-scale accommodation of volume expansion induced by the formation of new phases. These results demonstrate the inherent structural instability of NbSe3 as an intercalation cathode and its high lithiation rate as a promising conversion-type anode.

  6. Investigation of high tension chalcogenide glass micro-structure optical fibers%高强度硫系玻璃微结构光纤研究

    Institute of Scientific and Technical Information of China (English)

    何钰钜; 王训四; 聂秋华; 张培全; 徐会娟; 徐铁峰; 戴世勋; 张培晴

    2013-01-01

    Chalcogenide glass micro-structure optical fibers (CGMOFs) have wide potential applications in the field of infrared laser energy transmission and infrared optical fiber sensing for their unique optical properties. The problem is that there is no good method to prepare chalcogenide glass micro-structure optical fibers up to now. In this paper,we attempt to fabricate chalcogenide glass micro-structure optical fibers by using the press forming method. A glass extruder is designed to extrude Ge20 Sb15 Se65 chalcogenide glass into a multi-hole fiber preforms. Then,the extruder preform is drawn into fiber using an improved fiber drawing machine. The infrared transmitting property is measured by using infrared thermal imager and infrared spectrometer. The optical loss of extruded glass is calculated based on the infrared transmission spectra of glass disks with different thicknesses. We also measure fiber cross-section and its diameter by scanning electron microscope (SEM). The results show that the infrared transmission spectra of the extruded glass have not decreased obviously. The optical losses of the glasses before and after extruding at 10 μm are 0. 25 dB/cm and 0. 27 dB/cm. respectively. The strength of chalcogenide glass fiber protected by a thin layer of plastic polymer is 1.45 times of that of a standard silica fiber,promoting the development of chalcogenide glass micro-structure optical fibers.%针对硫系玻璃微结构光纤缺少有效制备方法的问题,本文选用可塑性较好的Ge20Sb15Se65硫系玻璃,利用自制的硫系玻璃挤压机制备了多孔硫系玻璃微结构光纤(CGMOF).利用红外热像仪以及傅里叶红外光谱仪测试了挤压前后玻璃的红外透过性能、根据不同厚度玻璃片的透过谱,计算了挤压后玻璃的光学损耗特性.利用扫描电子显微镜观察拉制光纤的横截面,测试了光纤的直径.分析结果表明,挤压后的硫系玻璃的红外透过率和损耗较挤压前没有显著

  7. Memory type switching behavior of ternary Ge20Te80-x Sn x (0  ⩽  x  ⩽  4) chalcogenide compounds

    Science.gov (United States)

    Jeevan Fernandes, Brian; Sridharan, Kishore; Munga, Pumlian; Ramesh, K.; Udayashankar, N. K.

    2016-07-01

    Chalcogenide compounds have gained huge research interest recently owing to their capability to transform from an amorphous to a crystalline phase with varying electrical properties. Such materials can be applied in building a new class of memories, such as phase-change memory and programmable metallization cells. Here we report the memory type electrical switching behavior of a ternary chalcogenide compound synthesized by doping Tin (Sn) in a germanium-telluride (Ge20Te80) host matrix, which yielded a composition of Ge20Te80-x Sn x (0  ⩽  x  ⩽  4). Results indicate a remarkable decrease in the threshold switching voltage (V T) from 140 to 61 V when the Sn concentration was increased stepwise, which is attributed to the domination of the metallicity factor leading to reduced amorphous network connectivity and rigidity. Variation in the threshold switching voltage (V T) was noticed even when the sample thickness and temperature were altered, confirming that the memory switching process is of thermal origin. Investigations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed the formation of a crystalline channel that acts as the conduction path between the two electrodes in the switched region. Structural and morphological studies indicated that Sn metal remained as a micro inclusion in the matrix and hardly contributed to the rigid amorphous network formation in Ge20Te80-x Sn x . Memory type electrical switching observed in these ternary chalcogenide compounds synthesized herein can be explored further for the fabrication of phase-change memory devices.

  8. Magnesium-induced copper-catalyzed synthesis of unsymmetrical diaryl chalcogenide compounds from aryl iodide via cleavage of the Se-Se or S-S bond.

    Science.gov (United States)

    Taniguchi, Nobukazu; Onami, Tetsuo

    2004-02-06

    The methodology for a copper-catalyzed preparation of diaryl chalcogenide compounds from aryl iodides and diphenyl dichalcogenide molecules is reported. Unsymmetrical diaryl sulfide or diaryl selenide can be synthesized from aryl iodide and PhYYPh (Y = S, Se) with a copper catalyst (CuI or Cu(2)O) and magnesium metal in one pot. This reaction can be carried out under neutral conditions according to an addition of magnesium metal as the reductive reagent. Furthermore, it is efficiently available for two monophenylchalcogenide groups generated from diphenyl dichalcogenide.

  9. Mid-infrared supercontinuum generation in chalcogenide step-index fibers pumped at 2.9 and 4.5µm

    OpenAIRE

    Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech; SEDDON, Angela; Tang, Zhuoqi; Sujecki, Slawomir; Benson, Trevor M.; Furniss, David; Lamrini, Samir; Scholle, Karsten; Fuhrberg, Peter; Napier, Bruce; Farries, Mark; Ward, Jon; Moselund, Peter M.

    2014-01-01

    The Mid-InfraRed (MIR) spectral range (2-12µm) contains the spectral fingerprint of many organic molecules, which can be probed nondestructively for e.g. detection of skin cancer. For this SuperContinuum (SC) laser sources are good candidates since they can have broadband bandwidths together with high spectral densities. Here we consider a MIR SC laser sources based on chalcogenide step-index fibers with exceptionally high numerical aperture of ~1 pumped either with Er:ZBLAN and Pr:CHALC fibe...

  10. Pressure induced structural phase transition of PrX, PrY (X = S, Se, Te) chalcogenides and (Y = N, P, As) pnictides

    Science.gov (United States)

    Varshney, Dinesh; Shriya, Swarna; Dube, A.; Varshney, Meenu

    2012-06-01

    Pressure induced structural aspects of NaCl-type (B1) to CsCl-type (B2) structure in Praseodymium pnictides and chalcogenides are presented. An effective interionic interaction potential with long range Coulomb, van der Waals interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge is developed. Deduced results on volume discontinuity in pressure volume phase diagram identify the structural phase transition from B1 to B2 structure consistent with the known results.

  11. Mercury's Crater-Hosted Hollows: Chalcogenide Pryo-Thermokarst, and Permafrost Analogs on Earth, Mars, and Titan

    Science.gov (United States)

    Kargel, Jeffrey

    2013-04-01

    MESSENGER has acquired stunning images of pitted, light-toned and variegated light/dark terrains located primarily on the floors—probably impact-melt sheets—of many of Mercury's large craters. Termed "hollows", the pitted terrains are geomorphologically similar to some on Mars formed by sublimation of ice-rich permafrost and to lowland thermokarst on Earth formed by permafrost thaw; to "swiss cheese" terrain forming by sublimation of frozen CO2 at the Martian South Pole; and to suspected hydrocarbon thermokarst at Titan's poles. I shall briefly review some analogs on these other worlds. The most plausible explanation for Mercury's hollows is terrain degradation involving melting or sublimation of heterogeneous chalcogenide and sulfosalt mineral assemblages. I refer to these Mercurian features as pyrothermokarst; the etymological redundancy distinguishes the conditions and mineral agents from the ice-related features on Earth and Mars, though some of the physical processes may be similar. Whereas ice and sulfur have long been suspected and ice recently was discovered in permanently shadowed craters of Mercury's polar regions, the hollows occur down to the equator, where neither ice nor sulfur is plausible. The responsible volatiles must be only slightly volatile on the surface and/or in the upper crust of Mercury's low to middle latitudes at 400-800 K, but they must be capable of either melting or sublimating on geologically long time scales. Under prevailing upper crustal and surface temperatures, chalcophile-rich "permafrost" can undergo either desulfidation or melting reactions that could cause migration or volume changes of the permafrost, and hence lead to collapse and pitting. I propose the initial emplacement of crater-hosted chalcogenides, sulfosalts and related chalcophile materials such as pnictides, in impact-melt pools (involving solid-liquid and silicate-sulfide fractionation) and further differentiation by associated dry or humid fumaroles (solid

  12. Investigation of Kinetics of crystallization Processes of S15-Se85, S15-Se81-Cu4 Chalcogenide glasses

    Science.gov (United States)

    Samudrala, Kavitha; Babu Devarasetty, Suresh

    2016-09-01

    In the present work, S15-Se85, S15-Se81-Cu4 chalcogenide glasses are prepared by using conventional melt quenching technique. The as-prepared samples are studied by experimental techniques like X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC). XRD studies have confirmed that the as-prepared samples are amorphous in nature. It is clear from DSC studies that the as-prepared samples are glassy in nature. Kinetic analysis of the crystallization process of as-prepared glasses is carried using DSC curves. Activation energy for glass transition and Activation energy for crystallization are determined using Kissinger method. Activation energy for glass transition of S15-Se85 and S15-Se81-Cu4 glasses is found to be 84.5076 and 275.801 KJ/Mole respectively. Activation energy for crystallization of S15-Se85 glass is found to be 106.2622 KJ/Mole for 1st peak while Activation energy for crystallization of S15-Se81-Cu4 glasses is found to be 97.93 KJ/Mole for 1st peak and 84.20 KJ/Mole for 2nd peak. Kauzmann temperature (Tk) is determined from the heating rate dependent glass transition and crystallization temperatures. Tk value for S15-Se85 glass sample is 236.680K (1st peak) and for S15-Se81-Cu4 is 283.530K (1st peak) and 286.330K (2n peak). Avrami Index (n) is also determined for as-prepared glasses. Avrami Index (n) value for S15-Se85 glass sample is 1.8 (1st peak) and for S15-Se81-Cu4 is 2.9 (1st peak) and 1.4 (2nd peak). The crystalline phases by thermal treatment of as-prepared glasses are identified using XRD patterns.

  13. Thermoelectric properties of chalcogenide based Cu2+xZnSn1−xSe4

    Directory of Open Access Journals (Sweden)

    Ch. Raju

    2013-03-01

    Full Text Available Quaternary chalcogenide compounds Cu2+xZnSn1−xSe4 (0 ≤ x ≤ 0.15 were prepared by solid state synthesis. Rietveld powder X-ray diffraction (XRD refinements combined with Electron Probe Micro Analyses (EPMA, WDS-Wavelength Dispersive Spectroscopy and Raman spectra of all samples confirmed the stannite structure (Cu2FeSnS4-type as the main phase. In addition to the main phase, small amounts of secondary phases like ZnSe, CuSe and SnSe were observed. Transport properties of all samples were measured as a function of temperature in the range from 300 K to 720 K. The electrical resistivity of all samples decreases with an increase in Cu content except for Cu2.1ZnSn0.9Se4, most likely due to a higher content of the ZnSe. All samples showed positive Seebeck coefficients indicating that holes are the majority charge carriers. The thermal conductivity of doped samples was high compared to Cu2ZnSnSe4 and this may be due to the larger electronic contribution and the presence of the ZnSe phase in the doped samples. The maximum zT = 0.3 at 720 K occurs for Cu2.05ZnSn0.95Se4 for which a high-pressure torsion treatment resulted in an enhancement of zT by 30% at 625 K.

  14. Optical properties change in laser-induced Te/As{sub 2}Se{sub 3} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Behera, Mukta; Naik, Ramakanta [Utkal University, Department of Physics, Bhubaneswar (India)

    2016-10-15

    In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As{sub 2}Se{sub 3} film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As{sub 2}Se{sub 3} bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As{sub 2}Se{sub 3} matrix was done by 532-nm laser irradiation. The structure of the As{sub 2}Se{sub 3}, as-prepared and irradiated Te/As{sub 2}Se{sub 3} films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As{sub 2}Se{sub 3} film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices. (orig.)

  15. Methods of thermoelectric enhancement in silicon-germanium alloy type I clathrates and in nanostructured lead chalcogenides

    Science.gov (United States)

    Martin, Joshua

    The rapid increase in thermoelectric (TE) materials R&D is a consequence of the growing need to increase energy efficiency and independence through waste heat recovery. TE materials enable the direct solid-state conversion of heat into electricity, with little maintenance, noise, or cost. In addition, these compact devices can be incorporated into existing technologies to increase the overall operating efficiency. High efficiency TE materials would enable the practical solid-state conversion of thermal to electrical energy. Optimizing the interdependent physical parameters to achieve acceptable efficiencies requires materials exhibiting a unique combination of properties. This research reports two methods of thermoelectric enhancement: lattice strain effects in silicon-germanium alloy type I clathrates and the nanostructured enhancement of lead chalcogenides. The synthesis and chemical, structural, and transport properties characterization of Ba8Ga16SixGe30-x type I clathrates with similar Ga-to-group IV element ratios but with increasing Si substitution (4 materials were then further optimized by adjusting the Ga-to-group IV element ratios. Recent progress in a number of higher efficiency TE materials can be attributed to nanoscale enhancement. Many of these materials demonstrate increased Seebeck coefficient and decreased thermal conductivity due to the phenomenological properties of nanometer length scales. To satisfy the demands of bulk industrial applications requires additional synthesis techniques to incorporate nanostructure directly within a bulk matrix. This research investigates, for the first time, dense dimensional nanocomposites prepared by densifying nanocrystals synthesized employing a solution-phase reaction. Furthermore, the carrier concentration of the PbTe nanocomposites can be adjusted by directly doping the nanocrystals, necessary for power factor optimization. These materials were fully characterized using a low temperature TE transport

  16. Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

    Science.gov (United States)

    Mao, Alvin W.

    Chalcogenide glasses exhibit unique optical properties such as infrared transparency owing to the low-phonon energies, optical non-linearity, and photo-induced effects that have important consequences for a wide range of technological applications. However, to fully utilize these properties, it is necessary to better understand the atomic-scale structure and structure-property relationships in this important class of materials. Of particular interest in this regard are glasses in the stoichiometric system Na2Se/BaSe--Ga 2Se3--GeSe2 as they are isoelectronic with the well-studied, oxide glasses of the type M2O(M'O)--Al 2O3--SiO2 (M = alkali, M' = alkaline earth). This dissertation investigates the structure of stoichiometric Na 2Se/BaSe--Ga2Se3--GeSe2 and off-stoichiometric BaSe--Ga2Se3--GeSe 2+/-Se glasses using a combination of Fourier-transform Raman and solid state nuclear magnetic resonance (NMR) spectroscopies. The spectroscopic data is then compared to composition-dependent trends in physical properties such as density, optical band gap, glass transition temperature, and melt fragility to develop predictive structural models of the short- and intermediate-range order in the glass network. These models significantly improve our current understanding of the effects of modifier addition on the structure and properties of chalcogenide glasses, and thus enable a more efficient engineering of these highly functional materials for applications as solid electrolytes in batteries or as optical components in infrared photonics. In general, the underlying stoichiometric Ga2Se3--GeSe 2 network consists primarily of corner-sharing (Ga/Ge)Se4 tetrahedra, where the coordination numbers of Ga, Ge, and Se are 4, 4, and 2, respectively. Some edge-sharing exists, but this configuration is relatively unstable and its concentration tends to decrease with any deviation from the GeSe2 composition. Due to the tetrahedral coordination of Ga, the initial addition of Se-deficient Ga2Se

  17. Structural features of spin-coated thin films of binary As{sub x}S{sub 100−x} chalcogenide glass system

    Energy Technology Data Exchange (ETDEWEB)

    Cook, J. [Austin Peay State University, Clarksville, TN 37075 (United States); Slang, S. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Golovchak, R. [Austin Peay State University, Clarksville, TN 37075 (United States); Jain, H. [International Materials Institute for New Functionality in Glass, Lehigh University, Bethlehem, PA 18015 (United States); Vlcek, M. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Kovalskiy, A., E-mail: kovalskyya@apsu.edu [Austin Peay State University, Clarksville, TN 37075 (United States)

    2015-08-31

    Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As{sub x}S{sub 100−x} (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As{sub 2}O{sub 3} was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films.

  18. Mid-infrared supercontinuum generation to 12.5μm in large NA chalcogenide step-index fibres pumped at 4.5μm

    DEFF Research Database (Denmark)

    Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech;

    2014-01-01

    We present numerical modeling of mid-infrared (MIR) supercontinuum generation (SCG) in dispersion-optimized chalcogenide (CHALC) step-index fibres (SIFs) with exceptionally high numerical aperture (NA) around one, pumped with mode-locked praseodymium-doped (Pr3+) chalcogenide fibre lasers. The 4.......5um laser is assumed to have a repetition rate of 4MHz with 50ps long pulses having a peak power of 4.7kW. A thorough fibre design optimisation was conducted using measured material dispersion (As-Se/Ge-As-Se) and measured fibre loss obtained in fabricated fibre of the same materials. The loss...... was below 2.5dB/m in the 3.3-9.4μ m region. Fibres with 8 and 10μm core diameters generated an SC out to 12.5 and 10.7μm in less than 2m of fibre when pumped with 0.75 and 1kW, respectively. Larger core fibres with 20μm core diameters for potential higher power handling generated an SC out to 10.6μm...

  19. Engel-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4

    Science.gov (United States)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2016-01-01

    Metal chalcogenide semiconductors have a significant role in the development of materials for energy and nanotechnology applications. First principle calculations were applied on CsAgGa2Se4 to investigate its optoelectronic structure and bonding characteristics, using the full-potential linear augmented plane wave method within the framework of generalized gradient approximations (GGA) and Engel-Vosko GGA functionals (EV-GGA). The band structure from EV-GGA shows that the valence band maximum and conduction band minimum are situated at Γ with a band gap value of 2.15 eV. A mixture of orbitals from Ag 4 p 6/4 d 10, Se 3 d 10, Ga 4 p 1, Se 4 p 4 , and Ga 4 s 2 states have a primary role to lead to a semiconducting character of the present chalcogenide. The charge density iso-surface shows a strong covalent bonding between Ag-Se and Ga-Se atoms. The imaginary part of dielectric constant reveals that the threshold (first optical critical point) energy of dielectric function occurs 2.15 eV. It is obvious that with a direct large band gap and large absorption coefficient, CsAgGa2Se4 might be considered a potential material for photovoltaic applications.

  20. A New Design of As2Se3‎ Chalcogenide Glass Photonic Crystal Fiber with Ultra-Flattened Dispersion in Mid-Infrared Wavelength Range

    Directory of Open Access Journals (Sweden)

    Mahmood Seifouri

    2014-12-01

    Full Text Available In this paper, we report a new design of As2Se3‎ chalcogenide glass photonic crystal fiber (PCF with ultra-flattened dispersion at mid-infrared wavelength range. We have used the plane wave expansion method (PWE for designing the structure of As2Se3‎ glass PCF at different wavelength windows. In the proposed structure with hole to hole spacing and , the negative dispersion is -1025 ps/nm/km at the wavelength of 1.55µm, and also an ultra-flattened dispersion is achieved at the wavelength range of 3.5-18μm. Hence such PCFs have a high potential to be used as dispersion compensating fibers at 1.55µm wavelength in optical communication systems. The ultra-flattened dispersion at the wavelength range of 3.5-18μm can be employed to achieve high power super-continuum generation. The nonlinear coefficient of the proposed PCF is 1.5 W-1m-1 at the wavelength of 1.55µm. Chalcogenide glasses are known to have both high transparency and nonlinearity in a wide range of infrared wavelengths compared to silica glasses.

  1. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50) for Phase Change Memory

    Institute of Scientific and Technical Information of China (English)

    LAI Yun-Feng; FENG Jie; QIAO Bao-Wei; HUANG Xiao-Gang; CAI Yan-Fei; LIN Yin-Yin; TANG Ting-Ao; CAI Bing-Chu; CHEN Bomy

    2006-01-01

    @@ The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure.

  2. Investigation of electronic structure and thermodynamic properties of quaternary Li-containing chalcogenide diamond-like semiconductors

    Science.gov (United States)

    Berarma, K.; Charifi, Z.; Soyalp, F.; Baaziz, H.; Uğur, G.; Uğur, Ş.

    2016-12-01

    Using first-principles calculations based on density functional theory, the structural, electronic and thermodynamic properties of Li2CdGeS4 and Li2CdSnS4 compounds are investigated. We confirmed that both Li2CdGeS4 and Li2CdSnS4 are diamond-like semiconductors of the wurtz-stannite structure type based on that of diamond in terms of tetrahedra volume. All the tetrahedra are almost regular with major distortion from the ideal occurring in the LiS4 tetrahedron, with values for S-Li-S ranging from 105.69° to 112.84° in the Li2CdGeS4 compound. Furthermore, the Cd-S bond possesses a stronger covalent bonding strength than the Li/Ge-S bonds. In addition, the inter-distances in Li2CdSnS4 show a larger spread than the distances in the Li2CdGeS4 compound. The electronic structures have been calculated to understand the bonding mechanism in quaternary Li-containing chalcogenide diamond-like semiconductors. Our results show that Li2CdGeS4 and Li2CdSnS4 are semiconductors with a direct band gap of 2.79 and 2.42 eV and exhibit mixed ionic-covalent bonding. It is also noted that replacing Ge by Sn leads to a decrease in the band gap; this behavior is explained in terms of bond lengths and electronegativity differences between atoms. Optical properties, including the dielectric function, reflectivity, and absorption coefficient, each as a function of photon energy are calculated and show an optical anisotropy for Li2CdGeS4 and Li2CdSnS4. The static dielectric constant {\\varepsilon }1(0) and static refractive index n(0) decrease when Ge is replaced by Sn. The influence of pressures and temperatures on the thermodynamic properties like the specific heat at constant volume {C}v, and at constant pressure {C}p, the Debye temperature {{{\\Theta }}}{{D}}, the entropy S and the Grüneisen parameter γ have been predicted at enlarged pressure and temperature ranges. The principal aspect from the obtained results is the close similarity of both compounds.

  3. Two new ternary lanthanide antimony chalcogenides: Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.68} containing chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anions

    Energy Technology Data Exchange (ETDEWEB)

    Babo, Jean-Marie [Department of Civil Engineering and Geological Sciences and Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556 (United States); Albrecht-Schmitt, Thomas E., E-mail: talbrec1@nd.edu [Department of Civil Engineering and Geological Sciences and Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556 (United States)

    2012-03-15

    Dark red and dark brown crystals of Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 8}Sb{sub 4}Se{sub 11.68}, respectively, were obtained from the reaction of the elements in Sb{sub 2}Q{sub 3} (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.75,} respectively. - Graphical Abstract: The crystal structure of Yb{sub 4}Sb{sub 2}S{sub 11} viewed along the [0 1 0]. Highlights: Black-Right-Pointing-Pointer Lanthanide chalcogenides. Black-Right-Pointing-Pointer Semiconductors. Black-Right-Pointing-Pointer Tunnel structures. Black-Right-Pointing-Pointer Lone-pair effects.

  4. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Science.gov (United States)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  5. Supercontinuum generation in a step-index chalcogenide fiber with AsSe2 core and As2S5 cladding

    Science.gov (United States)

    Gao, Weiqing; Xu, Qiang; Li, Xue; Zhang, Wei; Hu, Jigang; Li, Yuan; Chen, Xiangdong; Yuan, Zijun; Liao, Meisong; Li, Xia; Bi, Wanjun; Cheng, Tonglei; Suzuki, Takenobu; Ohishi, Yasutake

    2016-12-01

    We demonstrate the supercontinuum (SC) generation in a chalcogenide step-index fiber with AsSe2 core and As2S5 cladding. The characteristics of fiber are analyzed using the full-vectorial mode solver technique. The fiber has two zero-dispersion wavelengths at 2898 and 5140 nm. The evolving of SC spectra with fiber length and pump wavelength is investigated experimentally. The maximum SC range covering one octave from 1550 to 3300 nm is obtained when the 20 cm long fiber is pumped by 2000 nm pulses in normal dispersion region. The fiber can push forward the nonlinear application based on the stimulated Raman effect, stimulated Brillouin effect, four-wave mixing, supercontinuum generation, and so on in the mid-infrared waveband. The SCs are simulated by the nonlinear Schrödinger equation. The simulated results agree well with the experiments.

  6. Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ting; SONG Zhi-Tang; FENG Gao-Ming; LIU Bo; WU Liang-Cai; FENG Song-Lin; CHEN Bomy

    2007-01-01

    Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100ns. Both the values are larger than those of the Ge2Sb2 Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.

  7. A Facile Method for the Synthesis Fluorescent Zinc Chalcogenide (ZnO, ZnS and ZnSe) Nanoparticles in PS and PMMA Polymer Matrix.

    Science.gov (United States)

    Hariharan, P S; Subhashini, N; Vasanthalakshmi, J; Anthony, Savarimuthu Philip

    2016-03-01

    A simple method for the synthesis of fluorescent zinc chalcogenide (ZnO, ZnS and ZnSe) nanoparticles directly in the transparent PMMA and PS polymer matrices were reported. Highly dispersed small spherical ZnO nanoparticles (3-5 nm) was obtained by hydrothermal reaction of PMMA/PS-Zn(acac)2H2O in toluene. ZnS and ZnSe nanoparticles were prepared by heterogeneous stirring of PMMA/PS-Zn(acac)2H2O in toluene with aqueous solution of thiourea or NaHSe. Interestingly, ZnO and ZnS-PMMA thin film showed strong fluorescence quenching upon exposure to ammonia.

  8. Metal Ions Mediated Morphology and Phase Transformation of Chalcogenide Semiconductor: From CuClSe2 Microribbon to CuSe Nanosheet.

    Science.gov (United States)

    Liu, Yong-Qiang; Wu, Hao-Di; Zhao, Yu; Pan, Ge-Bo

    2015-05-01

    Foreign ions are of significant importance in controlling and modulating the morphology of semiconductor nanocrystals during the colloidal synthesis process. Herein, we demonstrate the potential of foreign metal ions to simultaneously control the morphology and crystal phase of chalcogenide semiconductors. The results indicate that the introduction of Al(3+) ions can induce the structural transformation from monoclinic CuClSe2 microribbons (MRs) to klockmannite CuSe nanosheets (NSs) and the growth of large-sized CuSe NSs. The as-prepared micrometer-sized CuSe NSs exhibit a high-conducting behavior, long-term durability, and environment stability. The novel properties enable CuSe NSs to open up a bright prospect for printable electrical interconnects and flexible electronic devices.

  9. First principles calculations of structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and PbTe compounds

    Indian Academy of Sciences (India)

    N Boukhris; H Meradji; S Amara Korba; S Drablia; S Ghemid; F El Haj Hassan

    2014-08-01

    The structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and BeTe using full-potential linear augmented plane wave (FP-LAPW) method are investigated. The exchange–correlation energy within the local density approximation (LDA) and the generalized gradient approximation (GGA) are described. The calculated structural parameters are in reasonable agreement with the available experimental and theoretical data. The electronic band structure shows that the fundamental energy gap is direct (L–L) for all the compounds. Thermal effects on some macroscopic properties of these compounds are predicted using the quasi-harmonic Debye model, in which the lattice vibrations are taken into account. The variations of the lattice constant, bulk modulus, heat capacity, volume expansion coefficient and Debye temperature with temperature and pressure are obtained successfully. The effect of spin–orbit interaction is found to be negligible in determining the thermal properties and leads to a richer electronic structure.

  10. Neutron diffraction study of structural transformations in ternary systems of HgSe sub 1 sub - sub x S sub x mercury chalcogenides at high pressure

    CERN Document Server

    Voronin, V I; Berger, I F; Glazkov, V P; Kozlenko, D P; Savenko, B N; Tikhomirov, S V

    2001-01-01

    The structure of the ternary systems of the HgSe sub 1 sub - sub x S sub x mercury chalcogenides is studied at high pressures up to 35 kbar. It is established that by increase in the pressure in the HgSe sub 1 sub - sub x S sub x there takes place the transition from the sphalerite type cubic structure to the cinnabar type hexagonal structure, which is accompanied by the jump-like change in the elementary cell volume and interatomic distances. The parameters of the elementary cell and positional parameters of the Hg and Se/S for the hexagonal phase of high pressure are determined. The existence of the two-phase state in the area of the phase transformation is determined

  11. Study of Third-Order Optical Nonlinearities of Se-Sn (Bi,Te) Quaternary Chalcogenide Thin Films Using Ti: Sapphire Laser in Femtosecond Regime

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2016-09-01

    The objective of the present research work is to study the nonlinear optical properties of quaternary Se-Sn (Bi,Te) chalcogenide thin films. A Z-scan technique utilizing 800 nm femtosecond laser source has been used for the determination of the nonlinear refractive index (n 2), two-photon absorption coefficient (β 2) and third-order susceptibility (χ (3)). In the measurement of n 2, an aperture is placed in the far field before the detector (closed aperture), while for the measurement of β 2, entire transmitted light is collected by the detector without an aperture (open aperture). Self-focusing has been observed in closed aperture transmission spectra. The appearance of the peak after the valley in this spectrum reflects the positive nonlinear refractive index. The calculated value of n 2 of the studied thin films varies from 1.06 × 10-12 cm2/W to 0.88 × 10-12 cm2/W. The compound-dependent behavior of n 2 is explained in this paper. We have also compared the experimental values of n 2 with the theoretically determined values, other compounds of chalcogenide glass and pure silica. The n 2 of the investigated thin films is found to be 3200 times higher than pure silica. The results of the open aperture Z-scan revealed that the value of β 2 of the studied compound is in the order of 10-8 cm/W. The behavior of two-photon absorption is described by means of the optical band gap (E g) of the studied compound. The variation in the figure-of-merit from 0.32 to 1.4 with varying Sn content is also reported in this paper. The higher value of nonlinearity makes this material advantageous for optical fibers, waveguides and optical limiting devices.

  12. Study of Third-Order Optical Nonlinearities of Se-Sn (Bi,Te) Quaternary Chalcogenide Thin Films Using Ti: Sapphire Laser in Femtosecond Regime

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2017-01-01

    The objective of the present research work is to study the nonlinear optical properties of quaternary Se-Sn (Bi,Te) chalcogenide thin films. A Z-scan technique utilizing 800 nm femtosecond laser source has been used for the determination of the nonlinear refractive index ( n 2), two-photon absorption coefficient ( β 2) and third-order susceptibility ( χ (3)). In the measurement of n 2, an aperture is placed in the far field before the detector (closed aperture), while for the measurement of β 2, entire transmitted light is collected by the detector without an aperture (open aperture). Self-focusing has been observed in closed aperture transmission spectra. The appearance of the peak after the valley in this spectrum reflects the positive nonlinear refractive index. The calculated value of n 2 of the studied thin films varies from 1.06 × 10-12 cm2/W to 0.88 × 10-12 cm2/W. The compound-dependent behavior of n 2 is explained in this paper. We have also compared the experimental values of n 2 with the theoretically determined values, other compounds of chalcogenide glass and pure silica. The n 2 of the investigated thin films is found to be 3200 times higher than pure silica. The results of the open aperture Z-scan revealed that the value of β 2 of the studied compound is in the order of 10-8 cm/W. The behavior of two-photon absorption is described by means of the optical band gap ( E g) of the studied compound. The variation in the figure-of-merit from 0.32 to 1.4 with varying Sn content is also reported in this paper. The higher value of nonlinearity makes this material advantageous for optical fibers, waveguides and optical limiting devices.

  13. New layered-type quaternary chalcogenides, Tl2PbMQ4 (M = Zr, Hf; Q = S, Se): structure, electronic structure, and electrical transport properties.

    Science.gov (United States)

    Sankar, Cheriyedath Raj; Assoud, Abdeljalil; Kleinke, Holger

    2013-12-16

    We have synthesized and characterized new thallium chalcogenides of the general formula Tl2PbMQ4 (M = Zr, Hf; Q = S, Se) from the constituent elements via high-temperature reaction conditions. These sulfides and selenides crystallize in the monoclinic crystal system (space group C2/c). The unit cell parameters refined from single-crystal X-ray diffraction data for Tl2PbZrS4 are a = 15.455(4) Å, b = 8.214(2) Å, c = 6.751(2) Å, β = 109.093(3)°, and V = 809.9(4) Å(3), with Z = 4. No corresponding tellurides were obtained from similar reaction conditions. The isostructural quaternary chalcogenides form a layered structure, composed of alternating metal and chalcogen layers. The latter are packed along the a axis as in the face-centered cubic packing (ABC), while the metal layers alternate between Tl layers and mixed Pb/Zr layers. All metal atoms are located in differently distorted Q6 octahedra, with the TlQ6 polyhedra being the least regular ones. Density functional theory based electronic structure calculations with inclusion of relativistic spin-orbit interactions predict (indirect) energy band gaps of 0.66 and 0.33 eV for Tl2PbZrS4 and Tl2PbHfSe4, respectively. Optical spectroscopy revealed significantly larger (direct) band gaps of 1.2 and 1.6 eV. The semiconducting character is in agreement with the charge-balanced formula (Tl(+))2Pb(2+)M(4+)(Q(2-))4. The electrical transport properties also show the semiconducting nature of these materials. For Tl2PbHfSe4, the Seebeck coefficient increases from +190 μV K(-1) at room temperature to +420 μV K(-1) at 520 K.

  14. Experimental study of the structure of chalcogenide glassy semiconductors in three-component systems of Ge-As-Se and As-Sb-Se by means of NQR and EPR spectroscopy

    Science.gov (United States)

    Bolebrukh, Olga; Sinyavsky, Nikolay; Korneva, Irina; Dobosz, Bernadeta; Ostafin, Michal; Nogaj, Boleslaw; Krzyminiewski, Ryszard

    2013-12-01

    The structure of chalcogenide glassy semiconductors in three-component systems of Ge-As-Se and As-Sb-Se has been studied by means of both NQR (nuclear quadrupole resonance) and EPR (electron paramagnetic resonance) spectroscopy. It is investigated that in the glasses of both systems the value of the electric field gradient at the resonating nuclei grows with increasing concentration of the clusters As2Se3 and Sb2Se3, thereby increasing the NQR resonance frequencies. It appears that for the Ge-As-Se system the structural transition from a two-dimensional to three-dimensional structure occurs at average coordination number bar r = 2.45. The EPR spectral parameters of glasses depend on the composition, the average coordination number and the temperature, and these are discussed. The effect of "ageing" for CGS (chalcogenide glassy semiconductors) of As-Sb-Se system due to partial crystallization of the sample is observed from the EPR spectra.

  15. The pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure: a mechanism for the zinc blende to cinnabar reconstructive phase transition

    CERN Document Server

    Kozlenko, D P; Ehm, L; Hull, S; Savenko, B N; Shchennikov, V V; Voronin, V I

    2003-01-01

    The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by x-ray and neutron powder diffraction at pressures up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. A phenomenological model of this reconstructive phase transition based on a displacement mechanism is proposed. Analysis of the geometrical relationship between the zinc blende and the cinnabar phases has shown that the possible order parameter for the zinc blende-cinnabar structural transformation is the spontaneous strain e sub 4. This assignment agrees with the previously observed high pressure behaviour of the elastic constants of some mercury chalcogenides.

  16. Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25 Chalcogenide Alloys

    Directory of Open Access Journals (Sweden)

    Shaveta Sharma

    2016-06-01

    Full Text Available The spectroscopic studies of various physical properties of glassy and polycrystalline chalcogenide alloys are important due to their importance as active materials in various solid state devices. The composition dependence of these properties are explained on the basis of coordination number, but the splitting of this effect from the nature of additive is imperative for furthering the understanding of these systems. In the present work, the structural and spectroscopic investigations of melt quenched bulk In-Sb-Se chalcogenide alloys have been studied by XRD, RAMAN and optical spectroscopic techniques. The XRD study reveals the polycrystalline nature of the samples. The composition was analysed using the energy dispersive X-ray spectroscopy technique. The XRD study reveals the crystallization of Sb2Se3 and β-In2Se3 phases while the increase in the intensity for β-In2Se3 phase has been observed with the increase in indium content. The RAMAN spectra also reveal the formation of chalcogenide based Sb and In structural units. The diffused reflectance spectrum was used to calculate the optical absorption in 800-1500 nm spectral region and used to study the composition dependence of the optical gap in these samples. The results have been discussed in conjunction with the heterogeneous phases; density of defect states; electronegativity and average mean bond energy for these polycrystalline alloys.

  17. Characterization of Atomic Structure, Relaxation and Phase Transformation Mechanisms in Bulk and Thin Film Amorphous Chalcogenides and Gallium Antimonide

    Science.gov (United States)

    Edwards, Trenton Gerard

    This dissertation details the characterization of the atomic structure, relaxation processes and phase transformation mechanisms in a variety of chalcogenide (selenides and tellurides) and other non-oxide (Ga-Sb alloys) glasses which are highly relevant to optoelectronic and phase change memory applications. One of the principal goals of these studies is to develop a fundamental, atomistic understanding of the structure-property relationships in these materials. Variable temperature Raman spectroscopy is used to the study the structure and its temperature dependent relaxation in GexSe100-x glasses and supercooled liquids with x ≤ 33.33 %. It is shown that the compositional dependence of the relative fractions of the edge- and corner-shared GeSe4 tetrahedra is fully consistent with a structural model based on random connectivity between the tetrahedral and chain elements. Temperature-dependent structural changes involve a progressive conversion of edge-shared to corner shared GeSe4 tetrahedra with decreasing equilibration temperature. The time scale of this structural conversion agrees with both enthalpy and shear relaxation near the glass transition. The temperature dependent change in the edge- vs. corner- sharing tetrahedral speciation is shown to be related to the production of configurational entropy, indicating a connection between structural relaxation, configurational entropy, and viscous flow. A combination of Raman and 77Se nuclear magnetic resonance (NMR) spectroscopy is applied to study the structure of a series of Se-deficient GexSe100-x glasses, with 42 ≥ x ≥ 33.33. Considerable violation of chemical order in the nearest-neighbor coordination environments of the constituent atoms is observed in the stoichiometric GeSe2 glass. On the other hand, the presence of a random distribution of Ge-Ge bonds can be inferred in the Se-deficient glasses. Furthermore, the results of this study conclusively indicate that the structure of these glasses is

  18. Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example of Cs2MIIM3IVQ8

    Science.gov (United States)

    Besse, Rafael; Sabino, Fernando P.; Da Silva, Juarez L. F.

    2016-04-01

    Quaternary chalcogenide materials offer a wide variety of chemical and physical properties, and hence, those compounds have been widely studied for several technological applications. Recently, experimental studies have found that the chalcogenide Cs2MIIM3IVQ8 family (MII = Mg , Zn , Cd , Hg , MIV = Ge , Sn and Q = S , Se , Te ), which includes 24 compounds, yields a wide range of band gaps, namely, from 1.07 to 3.4 eV, and hence, they have attracted great interest. To obtain an improved atomistic understanding of the role of the cations and anions on the physical properties, we performed a first-principles investigation of the 24 Cs2MIIM3IVQ8 compounds employing density functional theory within semilocal and hybrid exchange-correlation energy functionals and the addition of van der Waals corrections to improve the description of the weakly interacting layers. Our lattice parameters are in good agreement with the available experimental data (i.e., 11 compounds), and the equilibrium volume increases linearly by increasing the atomic number of the chalcogen, which can be explained by the increased atomic radius of the chalcogen atoms from S to Te . We found that van der Waals corrections play a crucial role in the lattice parameter in the stacking direction of the Cs2MIIM3IVQ8 layers, while the binding energy per unit area has similar magnitude as obtained for different layered materials. We obtained that the band gaps follow a linear relation as a function of the unit cell volume, which can be explained by the atomic size of the chalcogen atom and the relative position of the Q p states within the band structure. The fundamental and optical band gaps differ by less than 0.1 eV. The band gaps obtained with the hybrid functional are in good agreement with the available experimental data. Furthermore, we found from the Bader analysis, that the Coulomb interations among the cations and anions play a crucial role on the energetic properties.

  19. ac conductivity and dielectric properties of amorphous Se{sub 80}Te{sub 20-x}Ge{sub x} chalcogenide glass film compositions

    Energy Technology Data Exchange (ETDEWEB)

    Hegab, N.A. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)], E-mail: abir_net_2005@hotmail.com; Afifi, M.A.; Atyia, H.E.; Farid, A.S. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2009-05-27

    Thin films of the prepared Se{sub 80}Te{sub 20-x}Ge{sub x} (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the {omega}{sup s} law, in accordance with the hopping model, s is found to be temperature dependent (s < 1) and its value goes down as the temperature is increased. The temperature dependence of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping (CBH) model. Values of dielectric constant {epsilon}{sub 1} and dielectric loss {epsilon}{sub 2} were found to decrease with frequency and increase with temperature. The maximum barrier height W{sub m}, calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

  20. External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX (X=S, Se and Te)

    Energy Technology Data Exchange (ETDEWEB)

    Seddik, T. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Bouhemadou, A.; Guechi, N. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif (Algeria); Sayede, A. [Université Lille Nord de France, F-59000 Lille (France); Université-Artois, UCCS, F-62300 Lens (France); CNRS, UMR 8181, F-59650 Villeneuve d’Ascq (France); Varshney, D. [Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, Madhya Pradesh (India); Al-Douri, Y. [Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia)

    2013-11-01

    The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: X=S, Se, and Te) in their low-pressure phase (Fm3{sup ¯}m) and high-pressure phase (Pm3{sup ¯}m). The exchange-correlation potential is treated with the generalized gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE). Temperature dependence of the volume and both adiabatic and isothermal bulk moduli is predicted for a temperature range from 0to1200K for the both phases of the herein considered materials. Furthermore, we have analyzed the thermodynamic properties such as the heat capacities, C{sub V} and C{sub P}, thermal expansion, α, and Debye temperature, Θ{sub D,} under variable pressure and temperature. We have calculated the isothermal elastic constants C{sub ij}{sup T} of the YX monochalcogenides in both NaCl-B1 and CsCl-B2 phases at zero pressure and a temperature range 0−1200K. The results show that rare earth yttrium monochalcogenides are mechanically stable at high temperature. The elastic anisotropy of all studied materials in the two phases has been studied using three different methods.

  1. Effect of Film Thickness on the Optical Parameters and Electrical Conductivity of Te10Ge10Se77Sb3 Chalcogenide Glass

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several thin films of Te10Ge10Se77Sb3 chalcogenide glass of different thicknesses (250 nm to 400 nm) were prepared by thermalevaporation under vacuum of 133×10-6 Pa (10-6torr). X- ray diffraction analysis showed the amorphicity of the preparedfilms which become partially crystalline by annealing. Transmittance and reflectance measurements in the spectral range of200 nm to 2500 nm have been carried out at normal incidence. The analysis of the absorption coefficient data showed theexistence of indirect transition for the photon energy E in the range 1~3 eV and direct transition for E>3 eV. From thedetermination of the optical constants (n, k), the dispersion of the refractive index has anomalous behaviour in the region ofthe fundamental absorption edge, and followed by the single- effective oscillator approach. The investigated optical parameterssuch as the optical energy gap Eopt, the high frequency dielectric constant εoo, the oscillator position λo, and the oscillatorstrength So, were significantly affected by the film thickness. The characteristic energy gap obtained from the conductivitymeasurements is nearly half the value of that obtained from the optical data as in the case of thickness 400 nm. The activationenergy is 0.65 eV and the indirect optical gap is 1.32 eV.

  2. Structure and second-order nonlinearity of GeS2-Ga2S3-X2S3 (X=P,As,Sb) chalcogenide glasses

    Institute of Scientific and Technical Information of China (English)

    GONG Yue-qiu; GUO Hai-tao; ZHAO Xiu-jian

    2006-01-01

    To find new chalcogenide glass possessing larger second-order non-linearity,glasses with compositions Ge-Ga-X-S (X=P,As,Sb) were prepared via melt quenching technique. The amorphous nature of all the compositions of the as-quenched glasses was confirmed by X-ray diffraction(XRD). The glassy thermal properties of the as-quenched glasses were established by differential thermal analyses(DTA). The glass structure was studied by RAMAN spectra and the second order nonlinearity was studied by the Maker Fringe method after the electron beam poling(EBP) and electric/temperature field poling(ETFP) respectively. Additions of various pnicogen atoms into the Ge-Ga-S glasses lead to the difference in the second order nonlinearity of the glass. It's found that glasses with different structures result in different SHG intensities,and even more,a large second order nonlinear susceptibility c(2) of about 9 pm/V was obtained for all the glasses and the reasons for such a large susceptibility were analyzed.

  3. New Intermetallic Ternary Phosphide Chalcogenide AP2-xXx (A = Zr, Hf; X = S, Se) Superconductors with PbFCl-Type Crystal Structure

    Science.gov (United States)

    Kitô, Hijiri; Yanagi, Yousuke; Ishida, Shigeyuki; Oka, Kunihiko; Gotoh, Yoshito; Fujihisa, Hiroshi; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi

    2014-07-01

    We have synthesized a series of intermetallic ternary phosphide chalcogenide superconductors, AP2-xXx (A = Zr, Hf; X = S, Se), using the high-pressure synthesis technique. These materials have a PbFCl-type crystal structure (space group P4/nmm) when x is greater than 0.3. The superconducting transition temperature Tc changes systematically with x, yielding dome-like phase diagrams. The maximum Tc is achieved at approximately x = 0.7, at which point the Tc is 6.3 K for ZrP2-xSex (x = 0.75), 5.5 K for HfP2-xSex (x = 0.7), 5.0 K for ZrP2-xSx (x = 0.675), and 4.6 K for Hfp2-xSx (x = 0.5). They are typical type-II superconductors and the upper and lower critical fields are estimated to be 2.92 T at 0 K and 0.021 T at 2 K for ZrP2-xSex (x = 0.75), respectively.

  4. Enhancement in CO2 Adsorption Capacity and Selectivity in the Chalcogenide Aerogel CuSb2S4 by Post-synthetic Modification with LiCl

    KAUST Repository

    Ahmed, Ejaz

    2015-09-11

    The new chalcogel CuSb2S4 was obtained by reacting Cu(OAc)2·H2O with KSbS2 in a water/formamide mixture at room temperature. In order to modify the gas adsorption capacity the synthesized CuSb2S4 aerogel was loaded with different amounts of LiCl. CO2 adsorption measurements on the CuSb2S4 aerogel before and after treatment with LiCl showed more than three times increased uptake of the LiCl-modified chalcogel. The selectivities of the gas pairs CO2/H2 and CO2/CH4 in the LiCl-treated chalcogel are 235 and 105 respectively and amongst the highest reported for chalcogenide-based aerogels. In comparison with other porous materials like zeolites, activated carbon and most of the Metal Organic Frameworks (MOFs) or Porous Organic Frameworks (POFs), our synthesized aerogels show good air and moisture stability. Although, the CO2 storage capacity of our aerogels is relatively low, however the selectivity of CO2 over H2 or CH4 in LiCl-loaded aerogels are higher than in zeolites, activated carbon as well as some MOFs like Cu-BTC and MOF-5 etc.

  5. 冷却方式对硫系玻璃性能的影响%Influence of cooling methods on the properties of chalcogenide glass

    Institute of Scientific and Technical Information of China (English)

    常芳娥; 朱仲飞; 许军锋; 朱满; 坚增运

    2015-01-01

    T he effect of cooling methods on the microstructure ,thermal stability ,optical and mechanical proper‐ties of 99 7.5Ge23 Se67 Sb10‐0 2.5RbI glass were studied by DSC ,XRD ,SEM ,FT‐IR and Vickers hardness test in this study .The results indicated that ,for air cooled glass ,the infrared transmittance at wavelength of 8‐12 μm was above 70% ,which was higher than that of water cooled glass (64% ) .However ,due to the slow cooling rate of air cooled ,the solid solubility of hydrogen in selenium increases ,thus the absorption of impurities was also stronger than that of water cooled glass .For the thermal‐treatment samples ,the diffraction peaks of Sb2 Se3 and GeSe2 crystals can be found at 280 ℃/20 h for the glass cooled by air ,but at 300 ℃/20 h for the glass cooled by water .After thermal treat‐ment ,the fracture toughness of water cooled glass can reach to 0 4.14 MPa・m1/2 ,increased 26% compared with that without thermal treatment ,and it was higher than the maximum KIC (0 3.68 MPa・m1/2 ) of air cooled glass .Conse‐quently ,water cooled chalcogenide glass has a higher stability and a better fracture toughness ,thus it was more suitable for preparing micro‐crystallizing chalcogenide glass .%通过DSC、XRD、SEM、FT‐IR和显微硬度测试等分析手段,研究了冷却方式对99.75Ge23 Se67 Sb10‐02.5RbI玻璃组织、热稳定性以及光学和力学等性能的影响。结果表明,采用空冷制得的试样在8~12μm 波段红外透过率达70%以上,高于水冷试样(64%),但由于空冷冷速慢,氢在硒中的固溶度大,导致杂质吸收也大于水冷试样;空冷试样在280℃热处理20 h可从XRD检测发现明显Sb2 Se3和GeSe2的结晶峰,而水冷试样在300℃热处理20 h后才能检测到结晶峰;经过热处理,水冷试样的最大 K IC值可达到04.14 M Pa・m1/2,较未热处理值提高了26%,且高于空冷试样的最大 K IC (0.368 M Pa・ m1/2),因

  6. Ge-As-S硫系玻璃的结构与性能调控∗%Tailoring structure and prop erty of Ge-As-S chalcogenide glass

    Institute of Scientific and Technical Information of China (English)

    杨艳; 陈云翔; 刘永华; 芮扬; 曹烽燕; 杨安平; 祖成奎; 杨志勇

    2016-01-01

    Chalcogenide glass has been considered to be a promising optical material for infrared (IR) transmission and non-linear optics because of its favorable physical properties such as wide IR transparent windows, high linear and nonlinear refractive indices, and tunable photosensitivity. In many optical designs and practical applications, the refractive index (n) and optical bandgap (Eg) are two important parameters. Aiming to evaluate the composition dependence of the n and Eg in Ge-As-S chalcogenide glasses, a series of glasses with different stoichiometric characteristics are synthesized in quartz tubes under vacuum by the melt quenching technique. The structure, n and Eg of the glass are investigated by Raman spectroscopy, ellipsometry, and diffused reflectance spectroscopy, respectively. To eliminate thermal effects on the measured Raman spectra, the data are corrected by the Bose-Einstein thermal factor. Raman spectrum analyses indicate that Ge-As-S glass has a continuous network structure with interconnected [GeS4] tetrahedra and [AsS3] pyramids forming the backbone. When S amount is excess, S chains or S8 rings emerge. When S amount is deficient, As4S4/As4S3 molecules are formed, and even a large number of As-As/Ge-Ge homopolar bonds appear in the structure. The n values at different wavelengths are obtained by fitting the ellipsometry data with the Sellmeier dispersion model. The values of molar refractivity (Ri) of Ge, As and S elements are evaluated by using the measured n and density (d) of the investigated glass. The optimal values of Ri at 2–10 µm for each element are RGe = 9.83–10.42 cm3/mol, RAs = 11.72–11.87 cm3/mol, and RS = 7.78–7.86 cm3/mol, respectively; and the values decrease with increasing wavelength. The n of Ge-As-S glass is well quantitatively correlated to the d and the Ri of constituent elements, so that its value can be predicted or tailored within 1%deviation. A method to determine reliable Eg of a glass is proposed based on

  7. Optoelectronic behavior of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se): A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Din, Haleem Ud [Department of Physics, Hazara University, Mansehra (Pakistan); Azam, Sikander; Khan, Saleem Ayaz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria)

    2014-12-05

    Highlights: • The Fermi surface and optoelectronic properties for Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) compounds are investigated for the first time. • The electronic band structure calculations reveal a metallic nature for the herein studied compounds. • The bonding nature between different atoms is discussed. • Considerable anisotropy was found between the principal complex tensor components for the two compounds. - Abstract: First principle calculations of electronic, Fermi surface, electronic charge density and optical properties of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) are performed using full potential linear augmented plane wave (FP-LAPW) method within the frame work of density functional theory. Using mBJ method, the electronic band curves overlap at Fermi level and show metallic band structure for both compounds. The calculated densities of states (DOS) spectra show that the valence band is mainly attributed to Rb-p, Pd-d and S-s/p or Se-s/p states; conduction band is mainly attributed to Pd-d, U-f and S-p or Se-p/d states. From the electronic charge density spectrum, it is revealed that a strong covalent bond exists between Pd and S, and Pd or Se while charge transfer between U and S, U and Se, Rb and S, and Rb and Se atoms results in ionic bond nature. It is noted from Fermi surface calculations that both compounds comprise same number of fast velocity electrons but differs in slow or intermediate velocity of electrons. The calculated frequency dependent dielectric function, energy loss function and reflectivity show a considerable anisotropy for both compounds.

  8. Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States); Wiley, John B., E-mail: jwiley@uno.edu [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States)

    2012-06-15

    Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb{sub 2}O{sub 7}, is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb{sub 2}LaNb{sub 2}O{sub 7}. This compound is then reacted at room-temperature with in situ generated H{sub 2}S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb{sub 2}Cl)LaNb{sub 2}O{sub 7} where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S{sup 2−} alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H{sub 2}Se{sub (g)} were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

  9. Super-flat coherent supercontinuum source in Assub>38.8sub>Sesub>61.2sub> chalcogenide photonic crystal fiber with all-normal dispersion engineering at a very low input energy.

    Science.gov (United States)

    Diouf, Mbaye; Salem, Amine Ben; Cherif, Rim; Saghaei, Hamed; Wague, Ahmadou

    2017-01-10

    We numerically report super-flat coherent mid-infrared supercontinuum (MIR-SC) generation in a chalcogenide Assub>38.8sub>Sesub>61.2sub> photonic crystal fiber (PCF). The dispersion and nonlinear parameters of Assub>38.8sub>Sesub>61.2sub> chalcogenide PCFs by varying the diameter of the air holes are engineered to obtain all-normal dispersion (ANDi) with high nonlinearities. We show that launching low-energy 50 fs optical pulses with 0.88 kW peak power (corresponding to pulse energy of 0.05 nJ) at a central wavelength of 3.7 μm into a 5 cm long ANDi-PCF generates a flat-top coherent MIR-SC spanning from 2900 to 4575 nm with a high spectral flatness of 3 dB. This ultra-wide and flattened spectrum has excellent stability and coherence properties that can be used for MIR applications such as medical diagnosis of diseases, atmospheric pollution monitoring, and drug detection.

  10. Electronic, optical properties and chemical bonding in six novel 1111-like chalcogenide fluorides AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) from first principles calculations

    Science.gov (United States)

    Bannikov, V. V.; Shein, I. R.; Ivanovskii, A. L.

    2012-12-01

    Employing first-principles band structure calculations, we have examined the electronic, optical properties and the peculiarities of the chemical bonding for six newly synthesized layered quaternary 1111-like chalcogenide fluorides SrAgSF, SrAgSeF, SrAgTeF, BaAgSF, BaAgSeF, and SrCuTeF, which are discussed in comparison with some isostructural 1111-like chalcogenide oxides. We found that all of the studied phases AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) are semiconductors for which the fitted “experimental” gaps lie in the interval from 2.23 eV (for SrAgSeF) to 3.07 eV (for SrCuTeF). The near-Fermi states of AMChF are formed exclusively by the valence orbitals of the atoms from the blocks (MCh); thus, these phases belong to the layered materials with “natural multiple quantum wells”. The bonding in these new AMChF phases is described as a high-anisotropic mixture of ionic and covalent contributions, where ionic M-Ch bonds together with covalent M-Ch and Ch-Ch bonds take place inside blocks (MCh), while inside blocks (AF) and between the adjacent blocks (MCh)/(AF) mainly ionic bonds emerge.

  11. Structural, electronic properties and inter-atomic bonding in layered chalcogenide oxides La MChO (where M = Cu, Ag, and Ch = S, Se) from FLAPW-GGA calculations

    Science.gov (United States)

    Bannikov, V. V.; Shein, I. R.; Ivanovskii, A. L.

    2012-01-01

    Using the first principles FLAPW-GGA method, comparative study of structural, electronic properties and of chemical bonding in four 1111-like chalcogenide oxides La MChO (LaCuSO, LaCuSeO, LaAgSO, and LaAgSeO) with ZrCuSiAs-type structure was performed. Our studies showed that: (i) replacements of d metal atoms (Cu ↔ Ag) and chalcogen atoms (S ↔ Se) lead to anisotropic deformations of the crystal structure; this effect is related to strong anisotropy of inter-atomic bonds; (ii) all of the examined chalcogenide oxides are semiconducting; the band gap decreases both at S → Se and Cu → Ag substitutions; and (iii) the bonding in La MChO phases can be classified as a high-anisotropic mixture of ionic and covalent contributions, where mixed covalent-ionic bonds take place inside [La 2O 2] and [ M2Ch2] blocks, whereas between the adjacent [La 2O 2]/[ M2Ch2] blocks, ionic bonds emerge owing to [La 2O 2] → [ M2Ch2] charge transfer. Since the near-Fermi bands of La MChO phases originate mainly from electronic states of [ M2Ch2] blocks, we speculate that chemical substitutions inside these blocks can result in striking differences in electronic properties of these systems; therefore, this approach can be promising for significant enlargement of the functional properties of these materials.

  12. The role of the alkali and chalcogen atoms on the stability of the layered chalcogenide \\mathbf{{{A}_{2}}{{M}^{II}}M_{3}^{\\,IV}{{Q}_{8}}} (A  =  alkali-metal M  =  metal-cations Q  =  chalcogen) compounds: a density functional theory investigation within van der Waals corrections

    Science.gov (United States)

    Besse, Rafael; Da Silva, Juarez L. F.

    2017-01-01

    There is a great interest to design two-dimensional (2D) chalcogenide materials, however, our atomistic understanding of the major physical parameters that drive the formation of 2D or three-dimensional (3D) chalcogenides is far from satisfactory, in particular, for complex quaternary systems. To address this problem, we selected a set of quaternary 2D and 3D chalcogenide compounds, namely, {{\\text{A}}2}\\text{ZnS}{{\\text{n}}3}{{\\text{Q}}8} (A  =  Li, K, Cs; Q  =  S, Se, Te), which were investigated by density functional theory calculations within van der Waals (vdW) corrections. Employing experimental crystal structures and well designed crystal modifications, we found that the average atomic radius of the alkali-metal, A, and chalcogen, Q, species play a crucial role in the stability of the 2D structures. For example, the 2D structures are energetically favored for smaller (R1.8~{\\mathring{\\text{A}}}) average atomic radius, while 3D structures are favored at intermediate average atomic radius. Those results are explained in terms of strain minimization and Coulomb repulsion of the anionic species in the structure framework. Furthermore, the equilibrium lattice parameters are in excellent agreement with experimental results. Thus, the present insights can help in the design of stable quartenary 2D chalcogenide compounds.

  13. Local bonding structure of tellurium and antimony in the phase change chalcogenides germanium-antimony-tellurium: A nuclear magnetic resonance study

    Science.gov (United States)

    Bobela, David C.

    Recent technological applications of some chalcogenide materials, compounds containing a group VI atom, have prompted studies of the local atomic structure of the amorphous phase. In the case of Ge2Sb2Te 5, metastability in the local bonding structure is responsible for its usefulness as a phase-change memory material. There is no consensus on the exact phase-change mechanism, which is partly due to the inadequacy of standard scattering techniques to probe the structure of the amorphous phase. Nuclear magnetic resonance methods, on the other hand, are well suited to study local structural order even in the absence of a periodic lattice. In this technique, structural information is encoded as an oscillating voltage caused by the nuclear spin. For the tellurium isotope, 125Te (spin = 1/2 in the ground state), the dominant interaction comes from the core and valence electrons that carry angular momentum. This interaction is helpful in identifying Te sites of different local coordination since the number of neighboring atoms should markedly change the local electronic structure. The antimony isotope 125Sb has a spin = 5/2 in the ground state and possesses an asymmetric nuclear charge. This quadrupole moment will interact with an electric field gradient at the nuclear site, which is provided by an asymmetric electron cloud surrounding the nucleus. The frequency-space spectra will reflect the strength of the interaction as well as the symmetry of the local electronic environment. This work investigates the nuclear magnetic resonance spectrum of 125Te and 125Sb in the crystalline and amorphous forms of several GexSbyTe 1-x-y compounds where 0 arranged such that the constituent elements have enough bonds, on average, to satisfy their valence requirement. The implications of the NMR data on theoretical modeling data are immediate. Theoretical models of these systems must possess some aspect of the "8-n" mentality. With this idea as a foundation for physically realistic

  14. Electronic, optical properties and chemical bonding in six novel 1111-like chalcogenide fluorides AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) from first principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: ivanovskii@ihim.uran.ru [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation)

    2012-12-15

    Employing first-principles band structure calculations, we have examined the electronic, optical properties and the peculiarities of the chemical bonding for six newly synthesized layered quaternary 1111-like chalcogenide fluorides SrAgSF, SrAgSeF, SrAgTeF, BaAgSF, BaAgSeF, and SrCuTeF, which are discussed in comparison with some isostructural 1111-like chalcogenide oxides. We found that all of the studied phases AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) are semiconductors for which the fitted 'experimental' gaps lie in the interval from 2.23 eV (for SrAgSeF) to 3.07 eV (for SrCuTeF). The near-Fermi states of AMChF are formed exclusively by the valence orbitals of the atoms from the blocks (MCh); thus, these phases belong to the layered materials with 'natural multiple quantum wells'. The bonding in these new AMChF phases is described as a high-anisotropic mixture of ionic and covalent contributions, where ionic M-Ch bonds together with covalent M-Ch and Ch-Ch bonds take place inside blocks (MCh), while inside blocks (AF) and between the adjacent blocks (MCh)/(AF) mainly ionic bonds emerge. - Graphical Abstract: Isoelectronic surface for SrAgSeF and atomic-resolved densities of states for SrAgTeF, and SrCuTeF. Highlights: Black-Right-Pointing-Pointer Very recently six new layered 1111-like chalcogenide fluorides AMChF were synthesized. Black-Right-Pointing-Pointer Electronic, optical properties for AMChF phases were examined from first principles. Black-Right-Pointing-Pointer All these materials are characterized as non-magnetic semiconductors. Black-Right-Pointing-Pointer Bonding is highly anisotropic and includes ionic and covalent contributions. Black-Right-Pointing-Pointer Introduction of magnetic ions in AMChF is proposed for search of novel magnetic materials.

  15. Theoretical Studies on Mid-Infrared Gain Characteristics of Erbium-Doped Chalcogenide Glass Fibers%掺铒硫系玻璃光纤的中红外增益特性模拟研究

    Institute of Scientific and Technical Information of China (English)

    於杏燕; 戴世勋; 周亚训; 王训四; 张培晴; 刘永兴; 徐铁峰; 聂秋华

    2012-01-01

    The Er3+ doped (the mass fraction is 1 %) Ga5 Ge20 Sb1o S65 chalcogenide glasses are fabricated and the refractive index, absorption spectrum and emission spectra are measured. The spontaneous emission probability, absorption cross-section and emission cross-section are calculated using the theories of Judd-Ofelt and the Futchbauer-Ladenburg equation. Based on the rate equations and light propagation equations, the numerical simulations on mid-infrared gain characteristics for the Er3+ doped Ga5Ge2o Sb1o S65 chalcogenide glass fiber are calculated. Effects of energy transfer between Er3+ levels due to cross-relaxation, cooperative up-conversion and excited state absorption are considered in simulation. The results show that the Er3+ doped Gas Ge20 Sbio S65 chalcogenide glass fiber has a bigger signal mid-infrared gain and wider mid-infrared gain spectrum, and its maximum signal gain and gain width at 20 dB exceeds 40 dB and 200 nm, respectively. The results indicate that the Er3+ doped Ga5Ge2oSb10S65 chalcogenide glass is a better gain medium which can be applied to broadband amplifiers in mid-infrared.%实验制备了Er3+掺杂质量分数为1%的Ga5 Ge20 Sb10 S65硫系玻璃,测试了其折射率、吸收光谱和荧光光谱,利用Judd-Ofelt和Futchbauer-Ladenburg理论计算了Er3+离子的自发辐射几率、吸收截面和受激发射截面等光谱参数.在综合考虑Er3+离子的交叉弛豫、能量上转换和激发态吸收效应的基础上,应用四能级粒子数速率-光功率传输方程模型,模拟计算了Er3+掺杂Ga5 Ge20 Sb10S65硫系玻璃光纤的中红外2.74 μm波段的增益特性.结果显示,Er3+掺杂硫系玻璃光纤在2.74 μm中红外波段具有较高的信号增益和较宽的增益谱,最大增益值和20 dB增益带宽分别超过了40 dB和200 nm,表明其是可用于中红外2.74 μm波段宽带放大的理想增益介质.

  16. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides); Synthese assistee par faisceau d'ions d'agregats dans les verres (argent et chalcogenures de plomb)

    Energy Technology Data Exchange (ETDEWEB)

    Espiau de Lamaestre, R

    2005-04-15

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  17. Chalcogenide Glasses. Part 3. Chalcogenide Glass-Forming Systems.

    Science.gov (United States)

    1986-02-01

    Vol. 47, No. 3 (1974) p. 510-513 59. Berkes, J.S. and Myers, M.B., J. Electrochem. Soc,. 118 (1971) p. 1485-1491 60. Platakis, N.S. and Gatos , H.C., J...N.S., Sad-6opan, V. and Gatos , H.C., J. Electrochem. Soc. 116 (1969) p. 1436-1439 63. Flaschen, S.S., Pearson, A.D. and Northover, W.R., J. AppI. Phvs...S.R., J. Appi. Phys. 51(6) (1980) p. 3289-3309 91. Lebedev, E.A. and Rogachev, N.A., Soy . Phys. Semicond. 15(8) (1981) P-876-8 8 0 69 jr

  18. Chemical synthesis and assembly of quasi-two-dimensional metal chalcogenides graphene analogues%准二维金属硫属化合物类石墨烯结构的化学合成与组装

    Institute of Scientific and Technical Information of China (English)

    冯冯; 冯骏; 吴长征; 谢毅

    2012-01-01

    Inorganic graphene analogues are regarded as a typical quasi-two-dimensional nanostructure system. Graphene analogues entail more structural parameters that could be controlled compared with the pure-carbon graphene, which leads to the well controlled energy-band type and gap width, showing the promising signs in constructing electronic device in the field of energy conversion and energy storage. In this regard, metal chalcogenides (MCs) have drawn extensive attention as an important graphene analogue material system due to its unique quasi-two dimensional crystallographic structure. Herein, we reviewed the synthesis and assembly methodologies for graphene analogues of MCs, as well as their functional applications of their assembled nanostructures. We put forward the strategies that utilizing chemical methods to weaken interlayer force and embodying the highly anisotropic characteristics in the internal structural lattices to successfully realize the fabrication of graphene analogues. Finally, we also summarized the assembly strategy of graphene analogues and their promising applications in the area of energy storage and intelligent responsiveness nanodevices.%无机类石墨烯属于准二维纳米结构体系,因其具有比纯碳石墨烯本身更多的调控参数,比如带隙类型及其带隙宽度可调节等,在电子器件构筑和能量转化存储等领域有着重要的科学意义和广阔的应用前景.近年来,具有准二维特征的金属硫属化合物(metal chalcogenides,MCs)作为类石墨烯结构的重要材料体系受到了广泛关注.本文概述了近年来金属硫属化合物类石墨烯结构的化学制备方法及其可能的组装应用,提出了通过系列方法影响层间作用力及利用晶体各向异性等材料设计与合成策略来实现类石墨烯的化学合成,并展望了类石墨烯的组装结构在能量存储与智能传感领域的应用前景.

  19. Preparation and Characterization of a Homoleptic Vanadium(III) Amide Complex and Its Transformation into Terminal Chalcogenide Derivatives [(3,5-Me(2)Ph)AdN](3)V=E (E = S, Se; Ad = Adamantyl).

    Science.gov (United States)

    Ruppa, Kamalesh B. P.; Desmangles, Nathalie; Gambarotta, Sandro; Yap, Glenn; Rheingold, Arnold L.

    1997-03-12

    Reaction of VCl(3)(THF)(3) with (3,5-Me(2)Ph)AdNLi.Et(2)O (Ad = adamantyl) yields the homoleptic vanadium complex [(3,5-Me(2)Ph)AdN](3)V (1), which reacts with chalcogens E (E = S, Se) to yield diamagnetic terminal chalcogenide derivatives [(3,5-Me(2)Ph)AdN](3)V=E [E = S (3a), Se (3b)] Crystal data for 1 and 3a are as follows. 1: C(54)H(72)N(3)V, fw 814.09, triclinic P&onemacr;, a = 10.441(1) Å, b = 11.648(4) Å, c = 19.321(2) Å, alpha = 83.69(2) degrees, beta = 83.89(1) degrees, gamma = 82.42(2) degrees, Z = 2. 3a: C(54)H(72)N(3)VS.(1)/(2)Et(2)O, fw 883.25, monoclinic C2/c, a = 43.400(9) Å, b = 11.744(3) Å, c = 20.705(4) Å, beta = 113.05(1) degrees, Z = 8.

  20. The influence of Te on thermal properties of Er-doped (Ge{sub 30}(Se{sub 1-x}Te {sub x}){sub 70}){sub 94}Ga{sub 6} chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai, Nishi, Miyazaki 889-2192 (Japan)]. E-mail: t0b153u@cc.miyazaki-u.ac.jp; Sakai, T. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai, Nishi, Miyazaki 889-2192 (Japan); Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada); Tonchev, D. [Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada); Munzar, M. [Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada); Ikari, T. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai, Nishi, Miyazaki 889-2192 (Japan); Kasap, S.O. [Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada)

    2005-08-25

    We have studied the thermal properties of Er{sub 2}S{sub 3} doped (Ge{sub 0.30}(Se{sub 1-x}Te {sub x}){sub 0.70}){sub 94}Ga{sub 6} chalcogenide glasses alloyed with different amounts of Te (x = 0.005-0.4). All the samples were doped with 1 at.% of initial amount of Er{sup 3+} ions. The glass composition was chosen with respect to the possible use of this material system in optical amplifier applications operating in the 1550 nm telecommunications window. We have prepared the glass samples by means of melt-quenching techniques using two different synthesis procedures and starting materials. The actual concentrations of glass constituents have been measured by EDX/SEM and WDX/SEM microanalysis techniques. We have carried out temperature-modulated differential scanning calorimetry (TMDSC) measurements to evaluate the thermal stability of these glasses in terms of their glass transformation and crystallization behaviors. Thermal properties of these (Ge{sub 0.30}(Se{sub 1-x}Te {sub x}){sub 0.70}){sub 94}Ga{sub 6} glasses changed substantially for Te content x {>=} 0.01 because of the inability of the original glass structure to accommodate the Te atoms with substantially larger atomic radius.

  1. Ultra broadband mid-IR supercontinuum generation in Gesub>11.5sub>Assub>24sub>Sesub>64.5sub> based chalcogenide graded-index photonic crystal fiber: design and analysis.

    Science.gov (United States)

    Chaitanya, A G N; Saini, Than Singh; Kumar, Ajeet; Sinha, Ravindra Kumar

    2016-12-20

    In this paper, we report design and numerical analysis of a Gesub>11.5sub>Assub>24sub>Sesub>64.5sub> based chalcogenide glass graded-index photonic crystal fiber structure for mid-IR ultra broadband supercontinuum generation. The proposed dispersion engineered photonic crystal fiber offers a zero dispersion wavelength at a pump wavelength of 2.8 μm. To simulate the supercontinuum generation spectrum, the orders of dispersion coefficient up to the ninth order are considered. Simulated results indicate that an ultra broadband supercontinuum spectrum spanning 1-16 μm has been achieved using a 10 mm long photonic crystal fiber structure pumped with 50 fs secant hyperbolic pulses of 3 kW at a -30  dB spectral intensity level. To the best of our knowledge, this is the first time such broad supercontinuum spectrum has been reported. This ultra broadband mid-IR supercontinuum spectrum is applicable in many diverse fields, including medical, defense, metrology, and spectroscopy.

  2. Synthesis of metals chalcogenides nano-particles from H{sub 2}X (X=S, Se, Te) produced electrochemically; Synthese de nanoparticules de chalcogenures de metaux a partir de H{sub 2}X (X=S, Se, Te) produit electrochimiquement

    Energy Technology Data Exchange (ETDEWEB)

    Bastide, S.; Tena-Zaera, R.; Alleno, E.; Godart, C.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, 94 - Thiais (France); Hodes, G. [Weizmann Institute of Science, Rehovot (Israel)

    2006-07-01

    In this work, an electrochemical method to produce H{sub 2}X (X=S, Se, Te) hydrides in a controlled way (without being able to store them) and to transfer them directly in the synthesis reactor has been perfected. By this method, the use of H{sub 2}Te has been possible. The method uses the reduction of the elementary chalcogenide in acid medium. The Te being conductor, it can be directly used as electrode, on the other hand S and Se are insulators. Nevertheless, graphite-S or Se conducing composite electrodes can also be used. When the electrolyte composition (pH, salts presence) is well adjusted, the essential of the cathodic current is consumed by the chalcogenide reduction (low evolution of H{sub 2}) with faradic yields of about 100% for H{sub 2}S and H{sub 2}Se and 40% for HeTe. The use of H{sub 2}X allows the synthesis of nano-particles of metals chalcogenides directly by reaction with dissolved metallic salts in aqueous or organic medium and precipitation. Thus it has been possible to prepare all the CdX compounds under the form of nano-particles of diameter between 3 and 5 nm by bubbling of the gaseous hydrides in aqueous acetate solutions of Cd. In producing concomitantly H{sub 2}S and H{sub 2}Se, nano-particles of solid solutions CdS{sub x}Se{sub 1-x} have been synthesized too. (O.M.)

  3. Nonlinear Optical Properties of Silver Composited Ge-In-S-CsI Chalcogenide Glasses%银复合的Ge-In-S-CsI硫系玻璃的非线性光学性能研究

    Institute of Scientific and Technical Information of China (English)

    许银生; 成俊雯; 戚嘉妮; 鲁珊珊; 鲁克伦; 徐建伟; 邵琦芬; 戴世勋

    2014-01-01

    通过真空熔融淬冷法制备了银复合的70GeS2-20In2S3-10CsI 硫系玻璃样品,利用 Z-扫描技术研究了玻璃样品在800 nm 处三阶非线性光学性质,发现引入 Ag 可提高其折射率 n 和非线性折射率γ, n 从2.204增加至2.4087,γ从23.3×10-18 m2/W增加到30.5×10-18 m2/W,此外非线性响应时间从70 fs增加到79 fs。热处理对玻璃的非线性光学性能的影响研究显示,热处理后样品的γ增加至44.3×10-18 m2/W,是As2Se3玻璃的两倍多。发现析晶后带隙变小(吸收边红移)导致非线性吸收系数β减小,使得样品的品质因子提高至3.3。Ag复合的硫系玻璃及玻璃陶瓷非线性折射率大、品质因子高、非线性响应快,有望用于全关开关等各类非线性光学器件中。%In this study, the Ag doped 70GeS2-20In2S3-10CsI chalcogenide glasses were synthesized by vac-uumed melting-quenching technique. The third nonlinear optical properties were studied using Z-Scan technique at 800 nm. After being introduced Ag into the glass, both the linear and nonlinear refraction index γ increased from 2.204 to 2.2087 and from 23.3×10-18 to 30.5×10-18 m2/W, respectively. Besides, the nonlinear response time increased from 70 fs to 79 fs. The further heat treatment also enhanced the nonlinear refraction index up to 44.3×10-18 m2/W, 2 folds higher than that of As2Se3. Meanwhile, the nonlinear absorption coefficientβdecreased because the bandgap decreased with the thermal heat treatment. However, the highest figure of merit (FOM) is 3.3, which is enough for the nonlinear optics. Large nonlinear refraction index, high FOM, and fast response time ensured that the Ag-composited chalcogenide glass and glass ceramics can find applications in nonlinear optics.

  4. 红外硫系玻璃内部环状条纹检测及其算法研究%Internal ring stripes detection and algorithms for IR chalcogenide glasses

    Institute of Scientific and Technical Information of China (English)

    蔡金平; 吴礼刚; 彭宗举; 李祖盼; 林学彬; 陈建; 戴世勋

    2012-01-01

    IR chalcogenide glass is widely used in thermal imager and other optical systems currently,therefore testing the internal optical homogeneity of glass becomes particularly important in controlling of infrared glass quality and improving the product technology. In this paper,a simple system for infrared optical homogeneity detection is introduced, and the original images of internal ring stripes are obtained. By enhancing the image,detecting the boundary,removing the little areas,and using the dilation and erosion algorithms,the center positions,circular radius and other quantified features of the ring stripes are obtained. The final results of imaging process are satisfactory,and it's helpful to improve the equipment of infrared optical homogeneity detection as well. Moreover these algorithms provide basic data for the improvement of glass production technology.%当前红外硫系玻璃越来越广泛应用于红外热像仪等光学系统,玻璃内部光学均匀性检测对于红外玻璃的质量控制和工艺改进变得尤为重要.本文提出了一种简易的红外光学均匀性检测装置,获得了玻璃内部环状条纹的原始图像.通过图像增强、边缘检测、去除小区域,及膨胀腐蚀算法等处理之后,得到环状条纹圆心位置,圆环半径等量化特征参数,获得了满意的效果,从而有助于红外玻璃光学均匀性检测装置的改进,也为玻璃工艺的改良提供基础数据.

  5. Isomorphism of anhydrous tetrahedral halides and silicon chalcogenides: energy landscape of crystalline BeF2, BeCl2, SiO2, and SiS2.

    Science.gov (United States)

    Zwijnenburg, Martijn A; Corà, Furio; Bell, Robert G

    2008-08-20

    We employ periodic density functional theory calculations to compare the structural chemistry of silicon chalcogenides (silica, silicon sulfide) and anhydrous tetrahedral halides (beryllium fluoride, beryllium chloride). Despite the different formal oxidation states of the elements involved, the divalent halides are known experimentally to form crystal structures similar to known SiX2 frameworks; the rich polymorphic chemistry of SiO2 is however not matched by divalent halides, for which a very limited number of polymorphs are currently known. The calculated energy landscapes yield a quantitative match between the relative polymorphic stability in the SiO2/BeF2 pair, and a semiquantitative match for the SiS2/BeCl2 pair. The experimentally observed polymorphs are found to lie lowest in energy for each composition studied. For the two BeX2 compounds studied, polymorphs not yet synthesized are predicted to lie very low in energy, either slightly above or even in between the energy of the experimentally observed polymorphs. The experimental lack of polymorphism for tetrahedral halide materials thus does not appear to stem from a lack of low-energy polymorphs but more likely is the result of a lack of experimental exploration. Our calculations further indicate that the rich polymorphic chemistry of SiO2 can be potentially matched, if not extended, by BeF2, provided that milder synthetic conditions similar to those employed in zeolite synthesis are developed for BeF2. Finally, our work demonstrates that both classes of materials show the same behavior upon replacement of the 2p anion with the heavier 3p anion from the same group; the thermodynamic preference shifts from structures with large rings to structures with larger fractions of small two and three membered rings.

  6. 低损耗Ge-As-Se-Te硫系玻璃远红外光纤的性能分析∗%Investigation on Ge-As-Se-Te chalcogenide glasses for far-infrared fib er

    Institute of Scientific and Technical Information of China (English)

    赵浙明; 聂秋华; 戴世勋; 吴波; 刘雅洁; 江岭; 密楠; 王训四; 刘自军; 刘硕; 潘章豪

    2016-01-01

    With the development of infrared optics, low-loss waveguide materials are required. Especially, low-loss optical fiber development for far-infrared application has become a focus. Chalcogenide Ge-As-Se-Te(GAST) glasses and fibers for far-infrared light are prepared and investigated in this paper. The thermal properties and the infrared transmissions are reported. The influences of oxygen and hydrogen on the glass transmission and fiber attenuation are discussed. Low-loss GAST fiber with a structure of fine core/cladding is reported by a novel extrusion method (0.46 dB/m at 8.7 µm, 1.31 dB/m at 10.6 µm, base loss being under 1 dB/m from 7.2 to 10.3 µm). Here, the glasses are prepared by traditional vacuum melt-quenching and vapor distillation method. Structure and physical properties of GAST glass system are studied with X ray diffractions and thermal expansion instrument. Optical spectra of GAST glass system are obtained by spectrophotometer and infrared spectrometer. Main purification processes with different oxygen-getters (magnesium and aluminum) are disclosed. The fiber attenuation is measured by the cut-back method with an Fourier transform infrared spectroscopy spectrometer. The lowest loss of this fiber can be reduced to 1.32 dB/m at 10.6 µm, as it has a structure of Ge20As20Se15Te45 core and Ge20As20Se17Te43 cladding. The results show that these glasses are well transparent in a wide infrared window from 1.1 to 22 µm, and these glass fibers can transmit far-infrared light up to 12 µm, thus the GAST glass system is one of good candidates for far-infrared transparent materials. The fiber attenuation can be reduced effectively by the reasonable purification and novel extruded-processing. These fibers are suited for the power delivery of CO2 laser.

  7. Ge30Sb8Se62硫系玻璃的制备及其10.6μm低损耗空芯光子带隙光纤的设计%Preparation of Ge30Sb8Se62 Chalcogenide Glass and Designing for a Low-Loss Hollow-Core Photonic Crystal Fiber at 10.6 μm

    Institute of Scientific and Technical Information of China (English)

    刘永兴; 张培晴; 许银生; 王训四; 戴世勋; 聂秋华; 徐铁峰

    2012-01-01

    Chalcogenide glass photonic crystal fiber is expected to have important applications in the field of mid-infrared laser transmission. The Ge30Sb8Se62 chalcogenide glass with excellent transparency in mid-infrared region is prepared. Based on this chalcogenide glass,a band-gap photonic crystal fiber is designed,which suits high power laser transmission. With plane wave expansion method and finite element method,photonic band gap,mode-field area and confinement loss of the designed photonic crystal fiber are systematically studied. By optimizing the structural parameters of fiber,photonic crystal fiber with confinement loss less than 0. 1 dB/m and effective mode-field area larger than 100 μm2 at 10. 6μm is obtained.%硫系玻璃光子晶体光纤在中远红外激光传输领域具有广阔的应用前景.制备了红外波段具有优良透过特性的Ge30Sb8Se62硫系玻璃,并以此为基质材料设计了一种适合于高功率中红外激光传输的带隙型光子晶体光纤.利用平面波展开法和有限元法分析了不同结构下该光纤的光子带隙、模场面积和限制损耗特性.通过优化光纤的结构参数,获得了在10.6 μm处限制损耗小于0.1 dB/m的大模场(模场面积大于100 μm2)光子晶体光纤.

  8. Superconductivity versus bound-state formation in a two-band superconductor with small Fermi energy: Applications to Fe pnictides/chalcogenides and doped SrTiO3

    Science.gov (United States)

    Chubukov, Andrey V.; Eremin, Ilya; Efremov, Dmitri V.

    2016-05-01

    Fe pnictides and Fe chalcogenides in which a superconducting gap has been detected on the bands that do not cross the Fermi level, and to FeSe, in which the superconducting gap is comparable to the Fermi energy. We apply the results for the model with two electron bands to Nb-doped SrTiO3 and argue that our theory explains the rapid increase of Tc when both bands start crossing the Fermi level.

  9. New Directions in Metal Chalcogenide Nanochemistry

    Science.gov (United States)

    Thomson, Jordan W.

    Colloidal semiconductor nanocrystals have shown great promise in functional devices such as solar cells and LEDs, but still relatively little is understood about the chemistry of their formation and resulting structure. In this thesis, we describe the results of our study of ultrathin Bi2S3 nanowires, part of the emerging class of materials at the transition from molecular scale clusters to nanowires, from a chemical perspective. Using a complementary suite of techniques, we propose an atomically precise model of the nanowires accounting for both the inorganic core structure and ligand-surface interaction for purified dispersions. The growth process of the nanowires was studied using in situ NMR on reaction mixtures and information on the growth and reactivity not attainable with purified dispersions was gained. The small molecule reactivity of the sulfur-oleylamine precursor was elucidated and it was shown that H2S is produced in situ leading to the formation of Bi2S3. This knowledge allowed for the extension of the sulfur-oleylamine precursor to SemS n-oleylamine, which produces H2S and H2Se in situ leading to the formation of homogeneous solid-solution PbS xSe1-x nanocrystals with tunable stoichiometry. Through this work, we elucidated each stage of the nanowire formation from small molecule reactivity, to growth process, to solution phase structure.

  10. ``Forbidden'' phonon in the iron chalcogenide series

    Science.gov (United States)

    Fobes, David M.; Zaliznyak, Igor A.; Xu, Zhijun; Gu, Genda; Tranquada, John M.

    2015-03-01

    Recently, we uncovered evidence for the formation of a bond-order wave (BOW) leading to ferro-orbital order at low temperature, acting to stabilize the bicollinear AFM order, in the iron-rich parent compound, Fe1+yTe. Investigating the inelastic spectra centered near (100) in Fe1+yTe, a signature peak for the BOW formation in the monoclinic phase, we observed an acoustic phonon dispersion in both tetragonal and monoclinic phases. While a structural Bragg peak accompanies the mode in the monoclinic phase, in the tetragonal phase Bragg scattering at this Q is forbidden by symmetry, and we observed no elastic peak. This phonon mode was also observed in superconducting FeTe0.6Se0.4, where structural and magnetic transitions are suppressed. LDA frozen phonon calculations suggested that this mode could result from a spin imbalance between neighboring Fe atoms, but polarized neutron measurements revealed no additional magnetic scattering. We propose that this ``forbidden'' phonon mode may originate from dynamically broken symmetry, perhaps related to the strong dynamic spin correlations in these materials. Work at BNL was supported by BES, US DOE, under Contract No. DE-AC02-98CH10886. Research at ORNL's HFIR and SNS sponsored by Scientific User Facilities Division, BES, US DOE. We acknowledge the support of NIST, in providing neutron research facilities.

  11. Chalcogenide Materials for Solar Energy Conversion

    Directory of Open Access Journals (Sweden)

    Péter Turmezei

    2004-11-01

    Full Text Available The problem of electrical energy storage can possibly be solved with the help of electrochemical solar cells, which are suitable to generate either electrical energy or hydrogen gas under special conditions. The greatest problem of the electrochemical solar cell technology is to find novel materials which have appropriate properties for electrochemical energy conversion. In this work Cd4GeSe6, a novel material for electrochemical solar cells, will be presented.

  12. Chalcogenide aerogels as sorbents for radioactive iodine

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, Kota S.; Sarma, Debajit; Malliakas, Christos; Polychronopoulou, Kyriaki; Riley, Brian J.; Pierce, David A.; Chun, Jaehun; Kanatzidis, Mercouri G.

    2015-04-14

    Iodine (129I) is one of the radionuclides released in nuclear fuel reprocessing and poses risk to public safety due to its involvement in human metabolic processes. In order to prevent the leaching of hazardous radioactive iodine into the environment, its effective capture and sequestration is pivotal. In the context of finding a suitable matrix for capturing radioactive iodine the chalcogels, NiMoS4, CoMoS4, Sb4Sn4S12, Zn2Sn2S6, and CoSx (x = 4-5) were explored as iodine sorbents. All the chalcogels showed high uptake, reaching up to 225 mass% (2.25 g/g) of the final mass owing to strong chemical and physical iodine-chalcogen interactions. Analysis of the iodine-loaded specimens revealed that the iodine chemically reacted with Sb4Sn4S12, Zn2Sn2S6, and CoSx to form metal complexes SbI3, SnI4, and, KI respectively. The NiMoS4 and CoMoS4 chalcogels did not appear to undergo a chemical reaction with iodine since iodide complexes were not observed with these samples. Once heated, the iodine-loaded chalcogels released iodine in the temperature range of 75 °C to 220 °C, depending on the nature of iodine speciation. In the case of Sb4Sn4S12 and Zn2Sn2S6 iodine release was observed around 150 °C in the form of SnI4 and SbI3, respectively. The NiMoS4, CoMoS4, and CoSx released iodine at ~75 °C, which is consistent with physisorbed iodine. Preliminary investigations on consolidation of iodine-loaded Zn2Sn2S6 with Sb2S3 as a glass forming additive showed the content of iodine in consolidated glass ingots at around 25 mass%.

  13. Characterising refractive index dispersion in chalcogenide glasses

    DEFF Research Database (Denmark)

    Fang, Y.; Sojka, L.; Jayasuriya, D.;

    2016-01-01

    Much effort has been devoted to the study of glasses that contain the chalcogen elements (sulfur, selenium and tellurium) for photonics' applications out to MIR wavelengths. In this paper we describe some techniques for determining the refractive index dispersion characteristics of these glasses....

  14. New Materials for Chalcogenide Based Solar Cells

    Science.gov (United States)

    Tosun, Banu Selin

    Thin film solar cells based on copper indium gallium diselenide (CIGS) have achieved efficiencies exceeding 20 %. The p-n junction in these solar cells is formed between a p-type CIGS absorber layer and a composite n-type film that consists of a 50-100 nm thin n-type CdS followed by a 50-200 nm thin n-type ZnO. This dissertation focuses on developing materials for replacing CdS and ZnO films to improve the damp-heat stability of the solar cells and for minimizing the use of Cd. Specifically, I demonstrate a new CIGS solar cell with better damp heat stability wherein the ZnO layer is replaced with SnO2. The efficiency of solar cells made with SnO2 decreased less than 5 % after 120 hours at 85 °C and 85 % relative humidity while the efficiency of solar cells made with ZnO declined by more than 70 %. Moreover, I showed that a SnO2 film deposited on top of completed CIGS solar cells significantly increased the device lifetime by forming a barrier against water diffusion. Semicrystalline SnO2 films deposited at room temperature had nanocrystals embedded in an amorphous matrix, which resulted in films without grain boundaries. These films exhibited better damp-heat stability than ZnO and crystalline SnO2 films deposited at higher temperature and this difference is attributed to the lack of grain boundary water diffusion. In addition, I studied CBD of Zn1-xCdxS from aqueous solutions of thiourea, ethylenediaminetetraacetic acid and zinc and cadmium sulfate. I demonstrated that films with varying composition (x) can be deposited through CBD and studied the structure and composition variation along the films' thickness. However, this traditional chemical bath deposition (CBD) approach heats the entire solution and wastes most of the chemicals by homogenous particle formation. To overcome this problem, I designed and developed a continuous-flow CBD approach to utilize the chemicals efficiently and to eliminate homogenous particle formation. Only the substrate is heated to the deposition temperature while the CBD solution is rapidly circulated between the bath and a chilled reservoir. We have demonstrated Zn1-x CdxS films for a variety of (x) values, with and without varying (x) across film thickness.

  15. Chemical Routes to Colloidal Chalcogenide Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Schaak, Raymond E. [Pennsylvania State Univ., University Park, PA (United States)

    2014-11-25

    This project began with an emphasis on developing new low-­temperature synthetic routes to intermetallic alloys in order to advance the synthesis and processing science of superconducting materials, as well as to potentially discover new materials that would be inaccessible using more traditional higher-­temperature methods. Our initial target materials, chosen as model systems for developing new low-­temperature solution-­based synthetic platforms, were based on well known superconducting alloys, including Nb3M (M = Ga, Ge, Sn), Bi-­M (M = In, Cu), and MgCNi3. Several key, fundamental synthetic challenges that underpinned the formation of these materials using solution chemistry routes were identified and investigated.

  16. Ultrabroadband terahertz spectroscopy of chalcogenide glasses

    DEFF Research Database (Denmark)

    Zalkovskij, Maksim; Bisgaard, Christer Zoffmann; Novitsky, Andrey;

    2012-01-01

    and absorption coefficient is found for both glasses. We observe the breakdown of the universal power-law dependence of the absorption coefficient due to atomic vibrations observed at low THz frequencies in disordered materials, and see the transition to localized vibrational dynamics for the As2S3 compound...

  17. Modified chalcogenide glasses for optical device applications

    CERN Document Server

    Hughes, Mark A

    2014-01-01

    This thesis focuses on two different, but complementary, aspects of the modification of gallium lanthanum sulphide (GLS) glasses. Firstly the addition of transition metal ions as dopants is examined and their potential for use as active optical materials is explored. It is also argued that the spectroscopic analysis of transition metal ions is a useful tool for evaluating the local environment of their host. Secondly femtosecond (fs) laser modification of GLS is investigated as a method for waveguide formation.

  18. ([M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}]){sub ∞} (M=Zn, Mn): Three-dimensional chalcogenide frameworks constructed from quaternary metal selenide clusters with two different transition metals

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Wei-Wei [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Miao, Jianwei [School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 637459 (Singapore); Li, Pei-Zhou; Zhao, Yanli [Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore); Liu, Bin [School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 637459 (Singapore); Zhang, Qichun, E-mail: qczhang@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2014-10-15

    Herein we report solvothermal syntheses of two new three-dimensional chalcogenide frameworks ([M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}]){sub n} (M=Zn (1), Mn (2)), which consist of quaternary metal selenide clusters with two different transition metals. The compounds represent the first Ag–Zn/Mn–Sn–Se based quaternary anionic frameworks. The optical studies show that the band gaps for 1 and 2 are 2.09 eV and 1.71 eV, respectively. Moreover, the photoelectrochemical study indicates that compound 1 displays n-type semiconducting behaviour and is photoactive under visible light illumination (λ>400 nm). - Graphical abstract: Two 3D framework selenides, [M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}] (M=Zn (1), Mn (2)), constructed from quaternary metal selenide clusters, have been solvothermally synthesized and are photoactive under visible light illumination. - Highlights: • Two new three-dimensional selenide frameworks. • Quaternary metal selenide clusters with two different transition metals. • Photoelectrochemical study.

  19. Tm3+掺杂Ge-Ga-S玻璃微球-石英光纤锥耦合系统的荧光回廊模特性∗%Fluorescence whisp ering gallery mo des in Tm3+-dop ed Ge-Ga-S chalcogenide glasses microsphere-silica fib er taper coupling system

    Institute of Scientific and Technical Information of China (English)

    张兴迪; 吴越豪; 杨正胜; 戴世勋; 张培晴; 张巍; 徐铁锋; 张勤远

    2016-01-01

    Microsphere resonators based on chalcogenide glasses combine the superior optical properties of microsphere res-onators (such as high Q-factors and small mode volumes) and excellent material properties of chalcogenide glasses in the infrared spectrum (such as good transmissivities, high refractive indices, and low phonon energies), and thus have promising applications in the fields of low-threshold infrared lasers, nonlinear Raman amplifiers/lasers, and narrow band-width infrared filters. In this work, the infrared microsphere resonators are built by using a novel chalcogenide glass composition of 75 GeS2-15 Ga2S3-10 CsI (Ge-Ga-S), doped with 1.3 wt% Tm. Compared with previously reported chalcogenide micro-sphere resonators fabricated with As2S3 and gallium lanthanum sulfide (Ga-La-S) glasses, the proposed Ge-Ga-S glass does not contain the toxic element of As nor the expensive rare earth element of La, and thus is more environmentally friendly and cost-effective for fabricators and users. We first fabricate bulk Ge-Ga-S glasses by using the facility in our laboratory. After measuring the absorption and fluorescence spectra of bulk glasses, they are crushed into powders and the powders are blown downwards through an inert-gas-filled vertical furnace (temperature set at 1000 ◦C). Molten glass powders are transformed into high-quality microspheres in the furnace due to surface tension. Thousands of microspheres with diameters ranging from 50 to 200 µm can be made in one fabrication process. By using optical microscopy and scanning electron microscopy, a microsphere with high surface quality is selected for further optical characterization. The selected microsphere has a diameter of 72.84 µm, an eccentricity less than 1% (about 80 nm), and a Q-factor of 1.296 × 104. A silica fiber taper with a waist-diameter of 1.93 µm is fabricated as the coupling mechanism for the microsphere resonator. The coupling between the microsphere and the micro fiber taper is realized

  20. 新型远红外Ge-Te-Se-Sn硫系玻璃的热学与光学性质研究%Reaserch on Thermal and Optical Properties of Novel Ge-Te-Se-Sn Far Infrared Transmitting Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    孙杰; 聂秋华; 王训四; 戴世勋; 徐铁峰; 章向华; Bruno Bureau; Catherine Boussard; Clement Conseil

    2011-01-01

    采用熔融淬冷法制备了新型远红外Te基硫系玻璃Ge20-xTe65 Se15 Snx(x=0,2,4).在Ge-Te-Se玻璃的基础上,通过引入重金属Sn,研究其对玻璃组成、结构和性能的影响.测试了样品的中红外热成像、X射线衍射(XRD)图谱、差热分析曲线(DSC)、可见/近红外吸收光谱、红外透射光谱.利用经典的Tauc方程计算了样品的光学带隙,根据金属标准和能量带隙理论讨论了玻璃光学带隙与组分变化的关系.分析结果表明,Ge-Te-Se-Sn玻璃具有良好的热稳定性,随着Sn的引入,玻璃的光学带隙减小,短波吸收截止边发生红移,但玻璃的红外截止波长基本不变.此外Sn可以有效减弱Ge-O杂质吸收峰的强度,提高玻璃红外透射性能.%A novel series of Ge20-x Te65 Se15 Snx ( x = 0,2,4 ) chalcogenide glasses is prepared by traditional melt-quenching method. Infrared thermal (8~12 μm) image. X-ray diffraction (XRD), differential scanning calorimetry (DSC), visible/near-infrared absorption spectroscopy and infrared transmission spectra are adopted to analyze the composition, structure and performance of the Ge-Te-Se glasses system with addition of Sn. The Tauc equation is used to calculate the direct and indirect optical band gap. Based on the metallization criterion and band gap energy theory, the relation between optical band gap and composition is investigated. The results show that Ge-Te-Se-Sn glasses have good thermal stability. With the addition of Sn, the optical band gap of glass samples decreases, the short-wavelength edges shift to a longer wavelength, and the infrared cut-off wavelength almost keeps unchanged. Sn can weaken the intensity of the Ge-0 absorption peak and improve the infrared transmission properties of glass samples.

  1. Physio chemical prop erties and crystallization b ehavior of GeS2-In2S3 chalcogenide glasses%GeS2-In2S3硫系玻璃的物化性质与晶化行为研究∗

    Institute of Scientific and Technical Information of China (English)

    林常规; 翟素敏; 李卓斌; 屈国顺; 顾少轩; 陶海征; 戴世勋

    2015-01-01

    认识玻璃组成-性能-结构之间关系是玻璃科学中经久不衰的研究课题之一。在制得(100−x) GeS2-xIn2S3(x =10,15,20,25或30 mol%)系列玻璃和玻璃陶瓷样品的基础上,利用可见-近红外透过光谱, DSC, XRD和Raman光谱等测试技术表征了随组份变化的光学带隙,玻璃转变温度以及晶化行为等,并结合GeS2-Ga2 S3玻璃研究结果探讨了Ga, In 元素及其形成的网络结构对玻璃性质的影响。研究发现,在硫系玻璃中In比Ga对光学带隙和玻璃转变温度等性质的影响要大。它们所形成玻璃的晶化行为也截然不同,但与其各自的材料相图有着密切的联系。利用偏振拉曼光谱获得玻璃网络中的基本结构单元信息。最后,结合材料相图,玻璃随组成变化的物化性质和晶化行为以及基本网络结构单元的认识,探讨了玻璃的化学拓扑与网络拓扑之间的联系,为今后研究提供一种新的研究思路。%Relationship among the composition, properties, and structure of glasses are one of the long standing topics in glass science. In this paper, (100−x) GeS2-xIn2S3 (x=10, 15, 20, 25 or 30 mol%) glasses and glass-ceramics are prepared by melt-quenching and subsequent heat treatments. Their composition dependence of optical bandgap, glass transition temperature, and crystallization behavior is measured by various techniques, and the effect of Ga or In element and the related structural units on their properties is discussed with the help of the previous researches on the GeS2-Ga2S3 glass system. Results show that In has a much bigger influence than Ga on the optical bandgap and glass transition temperature of chalcogenide glasses, while the crystallization behavior of the two kinds of glasses containing Ga and In is totally different, but has a close connection with the respective phase diagram. Their structural motifs can be realized by employing polarized Raman spectra. Consequently, combined with the

  2. Rhizopus stolonifer mediated biosynthesis of biocompatible cadmium chalcogenide quantum dots.

    Science.gov (United States)

    Mareeswari, P; Brijitta, J; Harikrishna Etti, S; Meganathan, C; Kaliaraj, Gobi Saravanan

    2016-12-01

    We report an efficient method to biosynthesize biocompatible cadmium telluride and cadmium sulphide quantum dots from the fungus Rhizopus stolonifer. The suspension of the quantum dots exhibited purple and greenish-blue luminescence respectively upon UV light illumination. Photoluminescence spectroscopy, X-ray diffraction, and transmission electron microscopy confirms the formation of the quantum dots. From the photoluminescence spectrum the emission maxima is found to be 424 and 476nm respectively. The X-ray diffraction of the quantum dots matches with results reported in literature. The 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay for cell viability evaluation carried out on 3-days transfer, inoculum 3×10(5) cells, embryonic fibroblast cells lines shows that more than 80% of the cells are viable even after 48h, indicating the biocompatible nature of the quantum dots. A good contrast in imaging has been obtained upon incorporating the quantum dots in human breast adenocarcinoma Michigan Cancer Foundation-7 cell lines.

  3. Activation of chalcogens and chalcogenides at reactive uranium centers

    Energy Technology Data Exchange (ETDEWEB)

    Franke, Michael Sebastian

    2015-07-23

    The high reactivity of many trivalent uranium complexes was investigated in the Meyer group, however, these studies were not limited to small-molecule activation, but were extended to other relatively inert reagents like the heavier elemental chalcogens sulfur, selenium, and tellurium. The tripodal N-anchored chelate ({sup Ad,Me}ArO){sub 3}N{sup 3-} (trianion of tris(3-Adamantyl-2-hydroxy-5-methylbenzyl)amine) was found to be a very suitable candidate for this task and the respective uranium(III) complex [(({sup Ad,Me}ArO){sub 3}N)U{sup III}(DME)] is able to activate elemental sulfur and selenium to form the dinuclear, chalcogenido-bridged complexes [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-E)] (E = S, Se). Starting from this previously accomplished work, research in this thesis aimed at furthering reactivity studies of trivalent [(({sup Ad,Me}ArO){sub 3}N)U{sup III}(DME)], but also its chalcogenido-bridged uranium(IV) products, and the spectroscopic characterization of all newly synthesized compounds. Furthermore, the development of the new phenol HOAr* (Ar* = 2,6-(CHPh{sub 2}){sub 2}-4-Me-C{sub 6}H{sub 2}, 2,6-bis(diphenylmethyl)-4-methylphenyl) and its establishment as a ligand to be used for uranium coordination chemistry was another goal of this thesis. The activation of CO{sub 2} by uranium(III) complex [(({sup Ad,Me}ArO){sub 3}N)U{sup III}(DME)] to yield the dinuclear, carbonate-bridged uranium(IV/IV) complex [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-κ{sup 1}:κ{sup 2}-CO{sub 3})] and CO was reported in 2010 by Meyer and co-workers. These previous results led to the pursuit of the isolation of mixed chalcogenocarbonate complexes from the reaction of the bridging chalcogenidos [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-E)] (E = S, Se) with either CO{sub 2} or its heterocumulene analogs COS or CS{sub 2}. The chalcogeno-carbonates [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-κ{sup 1}:κ{sup 2}-CO{sub 2}E)] und [{(("A"d","M"eArO)_3N)U"I"V-(DME)}{sub 2}(μ-κ{sup 1}:κ{sup 2}-COSE)] (E = S, Se) could be obtained via insertion of CO{sub 2} or COS into the U-E bond, whereas CS{sub 2} is added to the U-Se-U bond and thus forms dithioselenocarbonate [{(("A"d","M"eArO)_3N)U"I"V(DME)}{sub 2}(μ-κ{sup 2}:κ{sup 2}-CS{sub 2}Se)]. The synthesis of terminal uranium monochalcogenido complexes with a U=E multiple bond is of great current interest, as ligands containing soft donor atoms such as sulfur, selenium, and tellurium are expected to participate in covalent bonding with uranium.s 5f-orbitals. Generating those compounds is difficult due to the high nucleophilicity of the E{sup 2-} ligands and requires special conditions to prevent the formation of di-, tri-, and polynuclear species. The development of new precursor complexes in order to access terminal uranium monochalcogenido species was another subject of this thesis and resulted in the synthesis of the hydrochalcogenido complexes [(({sup Ad,Me}ArO){sub 3}N)U{sup IV}(DME)(EH)] from H{sub 2}E (E = S, Se, Te). Many terminal ligands like the nitrido (N{sup 3-}), phosphido (P{sup 3-}), and chalcogenido (O{sup 2-}, S{sup 2-}, Se{sup 2-}, Te{sup 2-}) moieties are very reactive and require metal complexes with sterically demanding, supporting ligands that prevent undesired further reactivity. As a consequence, a new phenol HOAr* (Ar* = 2,6-(CHPh{sub 2}){sub 2}-4-Me-C{sub 6}H{sub 2}, 2,6-bis(diphenylmethyl)-4-methylphenyl) that combines bulkiness around the uranium center with very high flexibility, was developed to be used for uranium coordination chemistry. Depending on the reaction conditions, both a THF-coordinated and a solvent-free uranium(III) tris(aryloxo) complex could be obtained. Both compounds exhibit a uranium-(η{sup 6}-arene) interaction in their respective molecular structures, which could be further confirmed through DFT calculations. In a preliminary reactivity study it is shown that both uranium(III) complexes, the THF-coordinated and the coordinatively unsaturated species, react with N{sub 2}O to form a U(V) complex with a terminal oxo ligand. The molecular structure of this compound features two crystallographically independent molecules within the unit cell, one exhibiting trigonal-bipyramidal geometry and one revealing a square-pyramidal coordination environment around the uranium center.

  4. Laser induced structural transformation in chalcogenide based superlattices

    Science.gov (United States)

    Zallo, Eugenio; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella

    2016-05-01

    Superlattices made of alternating layers of nominal GeTe and Sb2Te3 have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

  5. NQR study of chalcogenide glasses Ge-As-Se.

    Science.gov (United States)

    Glotova, Olga; Korneva, Irina; Sinyavsky, Nikolay; Ostafin, Michal; Nogaj, Boleslaw

    2011-07-01

    A three-component Ge-As-Se system is studied by the nuclear quadrupole resonance (NQR) method on (75)As nuclei and by the nutation NQR spectroscopy. The NQR (75)As spectra of the glasses Ge(0.021) As(0.375) Se(0.604), Ge(0.043) As(0.348) Se(0.609) and Ge(0.068) As(0.318) Se(0.614) reveal broad lines with two peaks assigned to the main structural unit of As(2)Se(3). With increasing average coordination number ( ̅r), the spectrum signals are shifted towards higher frequencies. At ̅r > 2.54, the spectrum becomes complex, which is a consequence of formation of more complex molecular structures in the glasses of high content of germanium. At fixed frequencies the asymmetry parameter η of the samples studied is determined.

  6. Growth mechanism of nanowires: binary and ternary chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Su, Ching Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-05-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acoustooptical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  7. PAL signature of physical ageing in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Ingram, Adam; Kozdras, Andrzej [Physics Faculty of Opole University of Technology, 75, Ozimska Str., Opole 45370 (Poland); Shpotyuk, Oleh [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa 42201 (Poland); Golovchak, Roman [Physics Faculty of Opole University of Technology, 75, Ozimska Str., Opole 45370 (Poland); Lviv Scientific Research Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska Str., Lviv 79031 (Ukraine)

    2012-05-15

    Kinetics of physical ageing (PhA) far below the glass transition temperature (T{sub g}) is studied by positron annihilation lifetime and differential scanning calorimetry techniques for vitreous As{sub 20}Se{sub 80} as typical representative of network glasses. The increased density fluctuations are shown to be responsible for the initial stage of PhA in this glass at below-T{sub g} temperatures. These fluctuations are correlated with changes in thermodynamic parameters of structural relaxation through the glass-to-supercooled liquid transition interval. General shrinkage, occurred during the next stage of PhA, is shown to be determined by the ability of system to release these redundant open volumes from the glass bulk through densification process of glass network. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass

    CERN Document Server

    Hughes, M; Rutt, H; Hewak, D

    2014-01-01

    Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us and 4 % respectively. From the available spectroscopic data we propose the vanadium ions valence to be 3+ and be in tetrahedral coordination The results indicate potential for development of a laser or optical amplifier based on V:GLS.

  9. Structure and optical properties of CdSe chalcogenide semiconductors

    Science.gov (United States)

    Ganaie, Mohsin; Prince, Zulfequar, M.

    2015-08-01

    CdSe bulk sample has been prepared by melt-quenching technique and were characterized with XRD, SEM, FTIR, and electrical measurements. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of 10-6 Torr. An XRD measurement reveals the coexistence of glassy and crystalline phase in bulk sample. SEM studies shows single phase, porous, and granular surface morphology of powder CdSe alloy. Optical properties (optical gap, absorption coefficient, extinction coefficient, refractive index) are calculated in the range of 190-1100nm. Analysis of the optical measurement shows that the non-direct transition is predominant and the band gap come outs to be 1.751eV. Dc conductivity measurement is thermally activated process which shows the semiconducting nature of the sample having activation energy 0.31eV.

  10. Optical properties of porous chalcogenide films for sensor application

    Science.gov (United States)

    Lalova, A.; Todorov, R.

    2012-12-01

    The object of the present work is investigation of the optical properties of obliquely deposited thin films from As - S - Ge system. Aiming to obtain high porous coatings the deposition rate was varied in the range of 0.05-10 nm/s. The conditions for deposition of thin As - S - Ge films with columnar structure and high porosity were established. The role of the actual deposition conditions on the optical properties is examined. The optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, and slope parameter B in dependence of the deposition angle and rate are determined from specrophotometric measurements in the spectral range 400-2000 nm applying the Swanepoel's envelope method and Tauc's procedure. Increasing of the value of n from 2.40 to 1.83 for thin film with composition As10Ge30S60 with increasing deposition angle from 0° to 75° is observed. The possibility of using the thin films for optical sensing of SO2 and H2S was examined. Reversible changes of the refractive index, Δn = 0.015 were observed as a consequence of treatment virgin - exposure to H2SO4 vapors- annealing at 120 °C.

  11. Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

    DEFF Research Database (Denmark)

    Blichfeld, Anders Bank

    2017-01-01

    Thermoelectric materials offer solid state solution to convert waste heat into usable electric energy or to use electrical power for cooling with no movable parts and with no maintenance required. Thermoelectrics possess a large potential in an ever increasing concern with power management...... and utilizing environmental energy sources to minimize the anthropogenic impact on global climate changes. The efficiency of the current state of the art thermoelectric materials will have to be increased for making a change on global scale. For this to happen a detail structural understanding is needed...... thermoelectric materials because of their low price and high performance, but that still have unknown structural aspects that needs to be understood for control and utilization of their full thermoelectric potential. A range of syntheses techniques have been used to prepare zinc antimony compounds, e.g., spark...

  12. Preparation and study of heterojunctions based on chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kornev, K.P. [Kaliningrad State Univ., Kaliningrad (Russian Federation); Korneva, I.P. [Baltic Fishing Fleet State Academy, Kaliningrad (Russian Federation)

    2005-07-01

    Four types of heterojunctions were prepared: SnO{sub 2}-As{sub 2}(Se{sub 0.9}Te{sub 0.1}){sub 3}, SnO{sub 2}-(As{sub 0.67}Sb{sub 0.33}){sub 2}Se{sub 3}, n-GaAs-As{sub 2}Se{sub 3} and n-GaAs-As{sub 2}S{sub 3}. For all samples I-V characteristics and photosensitivity spectra were obtained. These heterostructures can be used for manufacturing rectifying devices and photoreceivers. (orig.)

  13. Forbidden phonon: Dynamical signature of bond symmetry breaking in the iron chalcogenides

    Science.gov (United States)

    Fobes, David M.; Zaliznyak, Igor A.; Tranquada, John M.; Xu, Zhijun; Gu, Genda; He, Xu-Gang; Ku, Wei; Zhao, Yang; Matsuda, Masaaki; Garlea, V. Ovidiu; Winn, Barry

    2016-09-01

    Investigation of the inelastic neutron scattering spectra in Fe1 +yTe1 -xSex near a signature wave vector Q =(1 ,0 ,0 ) for the bond-order wave (BOW) formation of parent compound Fe1 +yTe [D. Fobes et al., Phys. Rev. Lett. 112, 187202 (2014), 10.1103/PhysRevLett.112.187202] reveals an acoustic-phonon-like dispersion present in all structural phases. While a structural Bragg peak accompanies the mode in the low-temperature phase of Fe1 +yTe , it is absent in the high-temperature tetragonal phase, where Bragg scattering at this Q is forbidden by symmetry. Notably, this mode is also observed in superconducting FeTe0.55Se0.45 , where structural and magnetic transitions are suppressed, and no BOW has been observed. The presence of this "forbidden" phonon indicates that the lattice symmetry is dynamically or locally broken by magneto-orbital BOW fluctuations, which are strongly coupled to lattice in these materials.

  14. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    KAUST Repository

    Mejia, Israel I.

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  15. Investigation of Co, Ni and Fe Doped II-VI Chalcogenides

    Science.gov (United States)

    2013-01-04

    The parameter Dq, which depends on the charge of an electron, has a different sign for an iso electron-hole configuration. Thus, the Dq parameter...for the hole configuration of ions of the iron group in tetrahedral semiconductor crystals is positive. It is also positive for the case of an iso ...coordinate values for the absorption and emission transitions. E = 1462r3 + 6821r2 + 4143r - 24383 E = 394r3 + 9336r2 + 557,7r - 21026 - 26000 -24000

  16. Photoelectrochemical properties of cadmium chalcogenide-sensitized textured porous zinc oxide plate electrodes.

    Science.gov (United States)

    Emin, Saim; Fanetti, Mattia; Abdi, Fatwa F; Lisjak, Darja; Valant, Matjaz; van de Krol, Roel; Dam, Bernard

    2013-02-01

    We report the photoelectrochemical (PEC) performance of textured porous ZnO and CdX-coated ZnO films (X = S, Se). Porous ZnO films were grown with a platelike morphology on F-doped SnO(2) (FTO) substrates. The growth of ZnO films involves a two-step procedure. In the first step, we electrochemically grew simonkolleite (Zn(5)(OH)(8)Cl(2)·H(2)O) plate films. Annealing of the simonkolleite at 450 °C results in textured porous ZnO films. The as-obtained porous ZnO electrodes were then used in PEC studies. To increase the light-harvesting efficiency, we sensitized these ZnO electrodes with CdS and CdSe quantum dots, using the so-called "successive ion layer adsorption and reaction (SILAR) method". As expected, the photocurrent density systematically increases when going from ZnO to ZnO/CdS to ZnO/CdSe. The highest photocurrent, ∼3.1 mA/cm(2) at 1.2 V vs RHE, was obtained in the CdSe-sensitized ZnO electrodes, because of their enhanced absorption in the visible range. Additionally, quantum efficiency values as high as 90% were achieved with the textured porous ZnO films. These results demonstrate that both CdS and CdSe-sensitized textured porous ZnO electrodes could be potentially useful materials in light-harvesting applications.

  17. Thermo-tunable hybrid photonic crystal fiber based on solution-processed chalcogenide glass nanolayers

    DEFF Research Database (Denmark)

    Markos, Christos

    2016-01-01

    The possibility to combine silica photonic crystal fiber (PCF) as low-loss platform with advanced functional materials, offers an enormous range of choices for the development of fiber-based tunable devices. Here, we report a tunable hybrid silica PCF with integrated As2S3 glass nanolayers inside...... antiresonances by taking advantage the high thermo-optic coefficient of the solution-processed nanolayers. Two different hybrid fiber structures, with core diameter 10 and 5 mu m, were developed and characterized using a supercontinuum source. The maximum sensitivity was measured to be as high as 3.6 nm...

  18. Structural details of Ge-rich and silver-doped chalcogenide glasses for nanoionic nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Mitkova, Maria [Department of Electrical and Computer Engineering, Boise State University, Boise, Idaho 83725 (United States); Sakaguchi, Yoshifumi [Department of Electrical and Computer Engineering, Boise State University, Boise, Idaho 83725 (United States); JAEA, 2-4 Shirane, Shirakata, Tokai-mura Naka-gun, Ibaraki 319-1195 (Japan); Tenne, Dmitri [Department of Physics, Boise State University, 1910 University Dr., Boise, Idaho 83725-1570 (United States); Bhagat, Shekhar Kumar; Alford, Terry L. [School of Materials, Arizona State University, Tempe, Arizona 85287-8706 (United States)

    2010-03-15

    We are reporting our results of Raman and X-ray diffraction (XRD) studies on amorphous Ge{sub 46}S{sub 54} thin films and the films after silver photodiffusion. Based on the Raman scattering studies, a structural model for amorphous Ge{sub 46}S{sub 54} is suggested including the formation of single Ge-S chains with a vibrational mode at 410 cm{sup -1}. The result of XRD measurement indicates that there exists a medium-range order with about 6 A and acute; even at such Ge-rich composition. After the introduction of silver, the medium-range order is lost and there was a change in the diffraction curve indicative of the change in the local atomic order. The experimental results are explained in terms of our structural model, in connection with the application for fast switching memory devices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Combined hybrid functional and DFT+U calculations for metal chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Aras, Mehmet; Kılıç, Çetin, E-mail: cetin-kilic@gyte.edu.tr [Department of Physics, Gebze Institute of Technology, Gebze, Kocaeli 41400 (Turkey)

    2014-07-28

    In the density-functional studies of materials with localized electronic states, the local/semilocal exchange-correlation functionals are often either combined with a Hubbard parameter U as in the LDA+U method or mixed with a fraction of exactly computed (Fock) exchange energy yielding a hybrid functional. Although some inaccuracies of the semilocal density approximations are thus fixed to a certain extent, the improvements are not sufficient to make the predictions agree with the experimental data. Here, we put forward the perspective that the hybrid functional scheme and the LDA+U method should be treated as complementary, and propose to combine the range-separated Heyd-Scuseria-Ernzerhof (HSE) hybrid functional with the Hubbard U. We thus present a variety of HSE+U calculations for a set of II-VI semiconductors, consisting of zinc and cadmium monochalcogenides, along with comparison to the experimental data. Our findings imply that an optimal value U{sup *} of the Hubbard parameter could be determined, which ensures that the HSE+U{sup *} calculation reproduces the experimental band gap. It is shown that an improved description not only of the electronic structure but also of the crystal structure and energetics is obtained by adding the U{sup *} term to the HSE functional, proving the utility of HSE+U{sup *} approach in modeling semiconductors with localized electronic states.

  20. Engineering of refractive index in sulfide chalcogenide glass by direct laser writing

    KAUST Repository

    Zhang, Yaping

    2010-01-01

    Arsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.

  1. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive annealing for performance enhancement up to 2.0% solar cell conversion efficiency. Chemical treatment using metal salt solutions and Na2Se4 for Na and Se incorporation provided efficiencies up to 1.1%.

  2. Ternary chalcogenide micro-pseudocapacitors for on-chip energy storage

    KAUST Repository

    Kurra, Narendra

    2015-05-11

    We report the successful fabrication of a micro-pseudocapacitor based on ternary nickel cobalt sulfide for the first time, with performance substantially exceeding that of previously reported micro-pseudocapacitors based on binary sulfides. CoNi2S4 micro-pseudocapacitor exhibits a maximum energy density of 18.7 mWh/cm3 at a power density of 1163 mW/cm3, opens up an avenue for exploring new family of ternary oxides/sulfides based micro-pseudocapacitors.

  3. Solution-Processing of Chalcogenide Nanoparticles and Thin Films for Photovoltaic Applications

    OpenAIRE

    Carreté, Àlex

    2015-01-01

    [eng] Thin film solar cells based on direct band gap semiconductors have attracted much research during last decades. Thin film technologies are currently commercial and display record power conversion efficiencies up to 20% at the laboratory scale. However, typical direct band gap semiconductors, CdTe and CuIn1-xGaxS2 (CIGS), content scarce and/or toxic elements such as In, Ga or Cd. An alternative to these materials is Cu2ZnSnS4 (CZTS), formed by abundant and non toxic elements. CZTS i...

  4. First-principles study of {sup 75}As NQR in arsenic-chalcogenide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, Arthur H [Air Force Research Laboratory, AFRL/RVSE, Kirtland AFB, NM 87117-5776 (United States); Taylor, P C [Department of Physics, Colorado School of Mines, Golden, CO 80401 (United States); Campbell, Kristy A [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States); Pineda, Andrew C [Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131-0001 (United States)

    2011-02-09

    We present a theoretical study of the nuclear quadrupole interaction, {nu}{sub Q}, of {sup 75}As in crystalline and amorphous materials containing sulfur and selenium, and compare them with experiment. We studied a combination of hydrogen-terminated molecular clusters and periodic cells at various levels of quantum chemical theory. The results show clearly that the standard density functional theory (DFT) approximations, LDA and GGA, underestimate the nuclear quadrupole (NQR) interaction systematically, while Hartree-Fock theory overestimates it to an even greater degree. However, various levels of configuration interaction and the B3LYP hybrid exchange-correlation functional, which includes some exact exchange, give very good quantitative agreement for As bonded only to the chalcogen species. As-As bonds require highly converged basis sets. We have performed a systematic study of the effect of local distortions around an arsenic atom on {nu}{sub Q} and {eta}. Using a simple, semiclassical model, we have combined our total energy results with our NQR calculations to predict {nu}{sub Q} lineshapes for bond angle and bond length distortions. Our predictions for lineshape, including first and second moments, are in excellent agreement with the results of Su et al for a-As{sub 2}S{sub 3}, a-As{sub 2}Se{sub 3} and a-AsSe. We offer new insight into the distortions that led to this inhomogeneous broadening. Our results show clearly that, for trivalent arsenic atoms with zero or one arsenic nearest neighbor, symmetric bond stretching is the predominant contributor to the {nu}{sub Q} linewidth. However, in the presence of two arsenic nearest neighbors, distortions of the As-As-As apex angle dominates and, in fact, leads to a much larger second moment, in agreement with experiment.

  5. First-principles study of (75)As NQR in arsenic-chalcogenide compounds.

    Science.gov (United States)

    Edwards, Arthur H; Taylor, P C; Campbell, Kristy A; Pineda, Andrew C

    2011-02-09

    We present a theoretical study of the nuclear quadrupole interaction, ν(Q), of (75)As in crystalline and amorphous materials containing sulfur and selenium, and compare them with experiment. We studied a combination of hydrogen-terminated molecular clusters and periodic cells at various levels of quantum chemical theory. The results show clearly that the standard density functional theory (DFT) approximations, LDA and GGA, underestimate the nuclear quadrupole (NQR) interaction systematically, while Hartree-Fock theory overestimates it to an even greater degree. However, various levels of configuration interaction and the B3LYP hybrid exchange-correlation functional, which includes some exact exchange, give very good quantitative agreement for As bonded only to the chalcogen species. As-As bonds require highly converged basis sets. We have performed a systematic study of the effect of local distortions around an arsenic atom on ν(Q) and η. Using a simple, semiclassical model, we have combined our total energy results with our NQR calculations to predict ν(Q) lineshapes for bond angle and bond length distortions. Our predictions for lineshape, including first and second moments, are in excellent agreement with the results of Su et al for a-As(2)S(3), a-As(2)Se(3) and a-AsSe. We offer new insight into the distortions that led to this inhomogeneous broadening. Our results show clearly that, for trivalent arsenic atoms with zero or one arsenic nearest neighbor, symmetric bond stretching is the predominant contributor to the ν(Q) linewidth. However, in the presence of two arsenic nearest neighbors, distortions of the As-As-As apex angle dominates and, in fact, leads to a much larger second moment, in agreement with experiment.

  6. Structural, mechanical and optical studies on ultrafast laser inscribed chalcogenide glass waveguide

    Science.gov (United States)

    Ayiriveetil, Arunbabu; Varma, G. Sreevidya; Chaturvedi, Abhishek; Sabapathy, Tamilarasan; Ramamurty, Upadrasta; Asokan, Sundarrajan

    2017-04-01

    Multi-scan waveguides have been inscribed in GeS2 glass sample with different pulse energies and translation speeds. Mechanical and structural changes on GeS2 binary glass in response to irradiation to 1047 nm femto-second laser pulses have been investigated. The optical characterization of these waveguides has been done at 1550 nm of laser wavelength and the material response to laser exposure is characterized by both nanoindentation studies and micro-Raman spectroscopy. Nanoindentation investigations show a decrease in hardness (H) and elastic modulus (E) upon laser irradiation. The change in E and H are found to be varying with the translational speed, pulse energy and hence the net-fluence at the sample. These changes are correlated with variations in the Raman response of photo-exposed glass which is interpreted in terms of structural modifications made by the laser inscriptions to the glassy network. The mechanical behavior and local structural changes on waveguide writing is found to be dependent on net-fluence and it is correlated with the preparation conditions like melt temperature and cooling rate.

  7. Understanding Phonon Scattering by Nanoprecipitates in Potassium-Doped Lead Chalcogenides.

    Science.gov (United States)

    Wang, Zhao; Yang, Xiaolong; Feng, Dan; Wu, Haijun; Carrete, Jesus; Zhao, Li-Dong; Li, Chao; Cheng, Shaodong; Peng, Biaolin; Yang, Guang; He, Jiaqing

    2017-02-01

    We present a comprehensive experimental and theoretical study of phonon scattering by nanoprecipitates in potassium-doped PbTe, PbSe, and PbS. We highlight the role of the precipitate size distribution measured by microscopy, whose tuning allows for thermal conductivities lower than the limit achievable with a single size. The correlation between the size distribution and the contributions to thermal conductivity from phonons in different frequency ranges provides a physical basis to the experimentally measured thermal conductivities, and a criterion to estimate the lowest achievable thermal conductivity. The results have clear implications for efficiency enhancements in nanostructured bulk thermoelectrics.

  8. Linear and nonlinear properties of chalcogenide glasses in the terahertz frequency

    DEFF Research Database (Denmark)

    Zalkovskij, Maksim; Malureanu, Radu; Popescu, A.;

    2014-01-01

    used a standard THz-TDS setup based on photoconductive switches while in the higher frequency domain we used an air biased coherent detection (ABCD) setup. This allowed for a wide frequency range (from 0.2 to 18 THz) investigation of the refractive index of the glasses. The nonlinear coefficient...

  9. On the structural-optical correlations in radiation-modified chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kavetskyy, T; Tsmots, V [Solid State Microelectronics Laboratory, Drohobych Ivan Franko State Pedagogical University, 24 I. Franko Str., Drohobych, 82100 (Ukraine); Kaban, I; Hoyer, W [Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany); Shpotyuk, O, E-mail: kavetskyy@yahoo.com [Institute of Materials, Scientific Research Company ' Carat' , 202 Stryjska Str., Lviv, 79031 (Ukraine)

    2011-04-01

    In this work, we report our recent results on the gamma-irradiation-induced structural transformations in the Ge-Sb-S glasses as observed from the structural studies using high-energy synchrotron x-ray diffraction and extended x-ray absorption fine structure spectroscopy in comparison with the optical measurements using VIS/IR spectroscopy techniques. The structural-optical correlations in the radiation-induced effects are established. The structural changes upon irradiation are explained in the frames of the concept of coordination topological defects formation.

  10. Amorphous chalcogenide semiconductors for dosimetry of high-energy ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I. [Institute of Materials, Lviv (Ukraine). Dept. of New Perspective Developments

    1995-10-01

    The possible application of amorphous chalogenide semiconductors as radiation-sensitive elements of high-energy (E>1 MeV) dosimetry systems are analyzed. It is shown that some of these materials are characterized by a broader region of absorbed doses and low-temperature thresholds of radiation induced bleaching than conventional colouring oxide glasses. (author).

  11. Mid-infrared nonlinear absorption in Assub>2sub>Ssub>3sub> chalcogenide glass.

    Science.gov (United States)

    Théberge, Francis; Mathieu, Pierre; Thiré, Nicolas; Daigle, Jean-François; Schmidt, Bruno E; Fortin, Jean; Vallée, Réal; Messaddeq, Younès; Légaré, François

    2016-10-17

    We report mid-infrared (MIR) nonlinear absorption in Assub>2sub>Ssub>3sub> glasses which results from two-photon excitation of valence electron to the Urbach extension followed by strong linear absorption of excited states. The measured MIR nonlinear absorption can be 3 to 4 orders of magnitude stronger than the two-photon absorption in the near-infrared for similar laser intensities and does not result from contaminants, but it is intrinsic to Assub>2sub>Ssub>3sub> glasses. Assub>2sub>Ssub>3sub> fibers are widely used to generate supercontinuum by pumping them with high peak power laser pulses. For a 100 kilowatt peak power MIR soliton propagating in single mode Assub>2sub>Ssub>3sub> fiber, the nonlinear absorption can be of similar magnitude than the fiber background loss. Finally, for laser peak power around 1 MW, the MIR nonlinear absorption can be ~2 orders of magnitude larger than the fiber background loss in single mode Assub>2sub>Ssub>3sub> fiber.

  12. Enhanced luminescence in Er3+-doped chalcogenide glass-ceramics based on selenium

    OpenAIRE

    2013-01-01

    International audience; Rare earth doped glass-ceramics transparent in the infrared region up to 16 µm have been prepared and studied. The enhancement of the emission of Er3+ ions at 1.54 µm with increasing crystallinity was demonstrated in a selenium-based glass-ceramic having a composition of 80GeSe2-20Ga2Se3+1000 ppm Er. The optical transmission, microstructure and luminescence properties of a base glass and glass-ceramics were investigated. Luminescence intensities up to 7 times greater w...

  13. Enhanced luminescence in Er3+-doped chalcogenide glass-ceramics based on selenium

    Science.gov (United States)

    Hubert, Mathieu; Calvez, Laurent; Zhang, Xiang-Hua; Lucas, Pierre

    2013-10-01

    Rare earth doped glass-ceramics transparent in the infrared region up to 16 μm have been prepared and studied. The enhancement of the emission of Er3+ ions at 1.54 μm with increasing crystallinity was demonstrated in a selenium-based glass-ceramic having a composition of 80GeSe2-20Ga2Se3 + 1000 ppm Er. The optical transmission, microstructure and luminescence properties of a base glass and glass-ceramics were investigated. Luminescence intensities up to 7 times greater were obtained in glass-ceramics in comparison to the base glass. These materials are promising candidates for the production of new laser sources in the mid-infrared region.

  14. I-V measurements of Ge-Se-Sn chalcogenide glassy alloys

    Directory of Open Access Journals (Sweden)

    Vandana Kumari

    2015-03-01

    Full Text Available Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20 glassy thin pellets of diameter 12 mm and thickness 1 mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300 °C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

  15. Composition dependence of photoconductivity of As S Se Te I chalcogenide glasses

    Science.gov (United States)

    Gúth, I. O.; Lukić, S. R.; Petrović, D. M.; Skuban, F.

    2008-11-01

    Dependence of steady-state photoconductivity on the composition of bulk glasses of the (As 2S 3) 100-x(AsSe 0.5Te 0.5I) x quasi-binary cut was investigated. The photoconductivity maximum is absent, and up to the softening temperature a dominant mechanism is bimolecular recombination. At increased concentrations of (AsSe 0.5Te 0.5I) structural units decreases the intensity of photodegradation with light soaked samples. Activation energies of photoconductivity are by ∼0.1 eV lower than the energies of thermal activation of dark electrical conductivity. Parameters of photoinduced changes have an inflexion point located close to the composition around the middle of the selected quasi-binary cut.

  16. Tight Binding Calculation of Electric Field Gradients in Arsenic Chalcogenide Crystals and Glasses

    Science.gov (United States)

    Nelson, Chris B.; Taylor, P. Craig; Harrison, Walter A.

    2000-03-01

    We apply a tight binding approach to calculate the electric field gradient at As atoms due to three nearest neighbor chalcogen atoms in the two inequivalent As sites of crystalline As_2S_3, As_2Se_3, orthorhombic As (Or-As), and rhombohedral As (Rh-As). We first orthogonalize the 4s and 4p valence states on an As atom with respect to sp hybride states constructed on the three nearest neighbor chalcogen atoms. The orthogonalized As valence states are then othogonalized with respect to the As 2p and 3p core states using the Gramm-Schmidt procedure. The resulting state is used aa a first approximation to calculate the electric field gradient at the As nuclear site. Using Harrison's tight binding parameters,[1] which were constructed for tetrahedrally-coordinated semiconductors, we obtain excellent agreement with experiment for Rh-As and are within a factor of 2 ~ 4 for the Or-As, As_2S_3, As_2Se_3, crystal structures. Because the calculation depends only on the number of nearest neighbors it may be extendable to disordered systems, such as a glass. 1. S.Froyen and W.A. Harrison, Phys. Rev. B, 20, 2420 (1979).

  17. Connection between NMR and electrical conductivity in glassy chalcogenide fast ionic conductors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.H.

    1995-11-01

    The work documented in this thesis follows the traditional order. In this chapter a general discussion of ionic conduction and of glassy materials are followed by a brief outline of the experimental techniques for the investigation of fast ionic conduction in glassy materials, including NMR and impedance spectroscopy techniques. A summary of the previous and present studies is presented in the last section of this introductory chapter. The details of the background theory and models are found in the Chapter II, followed by the description of the experimental details in Chapter III. Chapter IV of the thesis describes the experimental results and the analysis of the experimental observations followed by the conclusions in chapter V.

  18. Fabrication and characterization of bare Ge-Sb-Se chalcogenide glass fiber taper

    Science.gov (United States)

    Luo, Baohua; Wang, Yingying; Sun, Ya'nan; Dai, Shixun; Yang, Peilong; Zhang, Peiqing; Wang, Xunsi; Chen, Feifei; Wang, Rongping

    2017-01-01

    In this work, Ge15Sb20Se65 bare glass fiber with a diameter of 500 μm was fabricated, and then tapered with different tapering parameters. The analysis of Raman and energy dispersive X-ray spectra (EDS) indicated that, a slight change in the chemical composition of the glass, fiber and tapering fiber has negligible effect on the glass structure. It was found that, the waist diameter decreases exponentially with increasing tapering length and speed, and high quality taper fiber with the cone diameter of 2.65 μm can be achieved under the optimal tapering conditions. Finally, the simulated and experimental results of the output transmission under different waist length and taper ratio show that the transmission decreases with increasing waist length and taper ratio.

  19. Raman Investigation of Structural Photoinduced Irreversible Changes of Ga(10)Ge(25)S(65) Chalcogenide Glasses

    Science.gov (United States)

    2001-06-01

    Inorganic Materials IIC ASCR and ICT, Pelleova 24, Prague 6, Czech Republic blnstituto de Quimica - UNESP- C.P. 355, CEP: 14801-970, Araraquara, SP...Brazil cDepto de Quimica - Universidade Federal de Juiz de Fora, Juiz de Fora, MG- Brazil dEscola de Engenharia de Sao Carlos- - Universidade de Sao Paulo

  20. A new approach for the synthesis of ZnO nanoparticles sensitized with metal chalcogenides

    OpenAIRE

    Zanotti, Lucio; Zappettini, Andrea; Villani, Marco; Calestani, Davide; Mosca, Roberto

    2009-01-01

    The present communication is a response to renewed interest in nanostructure based "coupled compounds", like ZnO-MeX (where Me = Cd, Pb,... and X = S, Se) which can find extensive use in the fabrication of a number of solid state devices, such as photoconductive, solar cells, electroluminescent cells, photocatalysts. Various oxide semiconductors, like TiO2 and ZnO, are known to have appropriate properties for these applications, although there are some drawbacks associated with their use: (i)...

  1. Effect of Sb on the optical properties of the Ge-Se chalcogenide thin films

    Science.gov (United States)

    Abdel-Wahab, F.; Ali karar, N. N.; El Shaikh, H. A.; Salem, R. M.

    2013-08-01

    Thin films of Ge30-xSbxSe70 (x=0, 5, 10 and 15) were prepared by thermal evaporation technique. All samples were confirmed as amorphous according to XRD results. The complex dielectric functions and optical parameters of the films determined by using the Swanepoel's method from transmittance spectra at room temperature in the range of wavelength 400-1100 nm. It has been found that by increasing Sb content, the optical band gap decreases, while the refractive index and the extinction coefficient increase. The optical energy gap of the films under test was discussed in terms of the chemically ordered model (COM) and random covalent network model (RCNM). We confirmed, using Raman spectroscopy, by addition of Sb the intensity of Ge-Ge and Ge-Se bands decreased; however, Sb-Se, and Se-chain band increased, in agreement with COM and RCNM. The results of the refractive index were studied using the Wemple equation. The variations of the refractive index and real part of dielectric constant associated with the changes of the density were examined with the well-known Lorentz-Lorenz relation. The experimental results were found to be in good agreement with those of theoretical ones.

  2. Single gain peak from modulation instability in As2Se3 chalcogenide glass photonic crystal fiber

    Science.gov (United States)

    Wang, Helin; Yang, Aijun

    2016-09-01

    With the As2Se3 photonic crystal fiber (PCF), the effect of pump power and wavelength on modulation instability (MI) gain is studied in detail. Due to high Raman scattering effect and high nonlinearity of As2Se3 PCF, ultra-broadband MI gain is obtained when appropriate pump power and wavelength is chosen, and the optimal MI gain bandwidth reaches 2812 nm. More importantly, competing between Raman scattering and four-wave mixing results in a single gain peak observed in the anti-Stokes region of As2Se3 PCF when pump power is higher than about 3000 W, while there is no gain spectrum in the fiber Stokes region. The phenomenon is found for the first time, and the obtained single gain peak mainly results from Raman scattering effect.

  3. Phase transition enhanced thermoelectric figure-of-merit in copper chalcogenides

    Directory of Open Access Journals (Sweden)

    David R. Brown

    2013-11-01

    Full Text Available While thermoelectric materials can be used for solid state cooling, waste heat recovery, and solar electricity generation, low values of the thermoelectric figure of merit, zT, have led to an efficiency too low for widespread use. Thermoelectric effects are characterized by the Seebeck coefficient or thermopower, which is related to the entropy associated with charge transport. For example, coupling spin entropy with the presence of charge carriers has enabled the enhancement of zT in cobalt oxides. We demonstrate that the coupling of a continuous phase transition to carrier transport in Cu2Se over a broad (360–410 K temperature range results in a dramatic peak in thermopower, an increase in phonon and electron scattering, and a corresponding doubling of zT (to 0.7 at 406 K, and a similar but larger increase over a wider temperature range in the zT of Cu1.97Ag.03Se (almost 1.0 at 400 K. The use of structural entropy for enhanced thermopower could lead to new engineering approaches for thermoelectric materials with high zT and new green applications for thermoelectrics.

  4. Electronic properties and momentum densities of tin chalcogenides: Validation of PBEsol exchange-correlation potential

    Energy Technology Data Exchange (ETDEWEB)

    Ahuja, B.L., E-mail: blahuja@yahoo.ik [Department of Physics, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Raykar, Veera; Joshi, Ritu [Department of Physics, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Tiwari, Shailja [Department of Physics, Govt. Women Engineering College, Ajmer 305001, Rajasthan (India); Talreja, Sonal [Department of Computer Science, M.L. Sukhadia University, Udaipur 313001 (India); Choudhary, Gopal [Department of Physics, Techno India NJR Institute of Technology, Udaipur 313001, Rajasthan (India)

    2015-05-15

    We report Compton profiles of SnS and SnTe at a momentum resolution of 0.34 a.u. using a 20 Ci {sup 137}Cs Compton spectrometer. To compare our experimental data, we have also computed the theoretical Compton profiles using density functional theory within linear combination of atomic orbitals (LCAO) method. To interpret the relative nature of bonding in these compounds, we have scaled the experimental and theoretical Compton profiles on equal-valence-electron-density (EVED). On the basis of EVED profiles, it is seen that SnTe shows more covalent character than SnS. To rectify the substantial disagreement between experimental and theoretical band gaps, we have also presented the energy bands and density of states of both the compounds using full-potential linearized augmented plane wave method (FP-LAPW) including spin–orbit interaction within the PBEsol exchange-correlation potential.

  5. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    Science.gov (United States)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-01-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes. PMID:28266587

  6. Phase transition enhanced thermoelectric figure-of-merit in copper chalcogenides

    Science.gov (United States)

    Brown, David R.; Day, Tristan; Borup, Kasper A.; Christensen, Sebastian; Iversen, Bo B.; Snyder, G. Jeffrey

    2013-11-01

    While thermoelectric materials can be used for solid state cooling, waste heat recovery, and solar electricity generation, low values of the thermoelectric figure of merit, zT, have led to an efficiency too low for widespread use. Thermoelectric effects are characterized by the Seebeck coefficient or thermopower, which is related to the entropy associated with charge transport. For example, coupling spin entropy with the presence of charge carriers has enabled the enhancement of zT in cobalt oxides. We demonstrate that the coupling of a continuous phase transition to carrier transport in Cu2Se over a broad (360-410 K) temperature range results in a dramatic peak in thermopower, an increase in phonon and electron scattering, and a corresponding doubling of zT (to 0.7 at 406 K), and a similar but larger increase over a wider temperature range in the zT of Cu1.97Ag.03Se (almost 1.0 at 400 K). The use of structural entropy for enhanced thermopower could lead to new engineering approaches for thermoelectric materials with high zT and new green applications for thermoelectrics.

  7. Mid-infrared supercontinuum generation in a suspended core chalcogenide fiber

    DEFF Research Database (Denmark)

    Møller, Uffe Visbech; Yu, Yi; Gai, Xin;

    The mid-infrared spectral region is of great interest because virtually all organic compounds display distinctive spectral fingerprints herein that reveal chemical information about them [1], and the mid-infrared region is therefore of key importance to many applications, including food quality...... control [2], gas sensing [3] and medical diagnostics [4] . We have used a low-loss suspended core As 38 Se 62 fiber with core diameter of 4.5 μ m and a zero - dispersion wavelength of 3.5 μ m to generate mid-infrared supercontinuum by pumping with an optical parametric amplifier delivering 320 fs pulses...... with a peak power of ~5.5 kW at a repetition rate of 21 MHz at different wavelengths from 3.3 to 4.7 μ m . By pumping at 4.4 μ m with a peak power of 5.2 kW coupled to the fiber a supercontinuum spanning from 1.7 to 7.5 μ m with an average output power of 15.6 mW was obtained. Figure 1 shows the results...

  8. Local probe investigations of the electronic phase diagrams of iron pnictides and chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Materne, Philipp

    2015-09-24

    In this work, the electronic phase diagrams of Ca{sub 1-x}Na{sub x}Fe{sub 2}As{sub 2} and Fe{sub 1+y}Te were investigated using muon spin relaxation and Moessbauer spectroscopy. Single crystals of Ca{sub 1-x}Na{sub x}Fe{sub 2}As{sub 2} with x = 0.00, 0.35, 0.50, and 0.67 were examined. The undoped 122 parent compound CaFe{sub 2}As{sub 2} is a semi metal and shows antiferromagnetic commensurate spin density wave order below 167 K. By hole doping via Na substitution, the magnetic order is suppressed and superconductivity emerges including a Na-substitution level region, where both phases coexist. Upon Na substitution, a tilting of the magnetic moments out of the ab-plane is found. The interaction of the magnetic and superconducting order parameter in this coexistence region was studied and a nanoscopic coexistence of both order parameters is found. This is proven by a reduction of the magnetic order parameter of 7 % in x = 0.50 below the superconducting transition temperature. This reduction was analysed using Landau theory and a systematic correlation between the reduction of the magnetic order parameter and the ratio of the transition temperatures, T{sub c}/T{sub N}, for the 122 family of the iron pnictides is presented. The magnetic phase transition is accompanied by a tetragonal-to-orthorhombic phase transition. The lattice dynamics at temperatures above and below this magneto-structural phase transition were studied and no change in the lattice dynamics were found. However, the lattice for finite x is softer than for the undoped compound. For x = 0.67, diluted magnetic order is found. Therefore, the magnetism in Ca{sub 1-x}Na{sub x}Fe{sub 2}As{sub 2} is persistent even at optimal doping. The superconducting state is investigated by measuring the temperature dependence of the magnetic penetration depth, where two superconducting gaps with a weighting of nearly 50:50 are obtained. A temperature independent anisotropy of the magnetic penetration depth γ{sub λ} = 1.5(4) is obtained, which is much smaller compared to other 122 compounds indicating a more three-dimensional behaviour of Ca{sub 1-x}Na{sub x}Fe{sub 2}As{sub 2}. Powder samples of Fe{sub 1+y}Te with y = 0.06, 0.12, 0.13, and 0.15 were examined. Fluctuating paramagnetic moments at room temperature were found, which are independent of the excess iron level y. Below 100 K, a magnetic precursor phase is observed, which is independent of y. Fe{sub 1.06}Te shows a commensurate spin density wave phase below T{sub N}, while for y ≥ 0.13 an incommensurate spin density wave phase below T{sub N} is found. However, a slowing down of the magnetic fluctuations with decreasing temperature and static magnetic order at lowest temperature are observed.

  9. Diffraction anomalies in hybrid structures based on chalcogenide-coated opal photonic crystals

    CERN Document Server

    Voronov, M M; Yakovlev, S A; Kurdyukov, D A; Golubev, V G

    2014-01-01

    The results of spectroscopic studies of the diffraction anomalies (the so-called resonant Wood anomalies) in spatially-periodic hybrid structures based on halcogenide (GST225)-coated opal films of various thickness are presented. A theoretical analysis of spectral-angular dependencies of the Wood anomalies has been made by means of a phenomenological approach using the concept of the effective refractive index of waveguiding surface layer.

  10. Chalcogenide compounds made by pulsed laser deposition at 355 and 248 nm

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Cazzaniga, Andrea Carlo; Crovetto, Andrea;

    Thin films made by pulsed laser deposition may differ depending on the laser wavelength. We compared ZnS, Cu2SnS3 and a target enriched with SnS relative to Cu2SnS3 using 355 nm and 248 nm lasers......Thin films made by pulsed laser deposition may differ depending on the laser wavelength. We compared ZnS, Cu2SnS3 and a target enriched with SnS relative to Cu2SnS3 using 355 nm and 248 nm lasers...

  11. Photoelectrochemical studies on aqueous suspensions of some nanometal oxide/chalcogenide semiconductors for hydrogen production

    Indian Academy of Sciences (India)

    Kasem K Kasem; Aubrey Finley

    2015-04-01

    Photoproduction of hydrogen was achieved by photolysis of aqueous suspensions of mixed TiO2/V2O5 or CdS/ZnS semiconductor (SC) nanoparticle in phosphate buffers containing [Fe(CN)6]4−. Manipulations of the band structure of the SC materials took place by either combining oxides/sulphides in binary mixtures or by modification of the SC surface with an organic semiconductor. Studies show that the bandgap of these mixed materials varied monotonically with the percent composition of the mixture. Furthermore, results show that maximum generation of hydrated electrons by [Fe(CN)6]4− occurred at pH 6. Mixtures of CdS/ZnS showed greater photoactivity than metal oxides TiO2/V2O5. On the other hand, surface-modified CdS or TiO2 gave much better photoreduction than the high percentage composite mixtures. The aqueous nanosystems used in these studies sustained their stability as indicated by the reproducibility of their photocatalytic activities.

  12. Stepwise construction of manganese-chromium carbonyl chalcogenide complexes: synthesis, electrochemical properties, and computational studies.

    Science.gov (United States)

    Shieh, Minghuey; Miu, Chia-Yeh; Huang, Kuo-Chih; Lee, Chung-Feng; Chen, Bao-Gun

    2011-08-15

    When trigonal-bipyramidal clusters, [PPN][E(2)Mn(3)(CO)(9)] (E = S, Se), were treated with Cr(CO)(6) and PPNCl in a molar ratio of 1:1:2 or 1:2:2 in 4 M KOH/MeCN/MeOH solutions, mono-Cr(CO)(5)-incorporated HE(2)Mn(3)-complexes [PPN](2)[HE(2)Mn(3)Cr(CO)(14)] (E = S, [PPN](2)[1a]; Se, [PPN](2)[1b]), respectively, were formed. X-ray crystallographic analysis showed that 1a and 1b were isostructural and each displayed an E(2)Mn(3) square-pyramidal core with one of the two basal E atoms externally coordinated with one Cr(CO)(5) group and one Mn-Mn bond bridged by one hydrogen atom. However, when the TMBA(+) salts for [E(2)Mn(3)(CO)(9)](-) were mixed with Cr(CO)(6) in a molar ratio of 1:1 in 4 M KOH/MeOH solutions and refluxed at 60 °C, mono-Cr(CO)(3)-incorporated E(2)Mn(3)Cr octahedral clusters [TMBA](3)[E(2)Mn(3)Cr(CO)(12)] (E = S, [TMBA](3)[2a]; Se, [TMBA](3)[2b]), respectively, were obtained. Clusters 2a and 2b were isostructural, and each consisted of an octahedral E(2)Mn(3)Cr core, in which each Mn-Mn or Mn-Cr bond of the Mn(3)Cr plane was semibridged by one carbonyl ligand. Clusters 1a and 1b (with [TMBA] salts) underwent metal core closure to form octahedral clusters 2a and 2b upon treatment with KOH/MeOH at 60 °C. In addition, 1a and 1b were found to undergo cluster expansion to form di-Cr(CO)(5)-incorporated HE(2)Mn(3)-clusters [HE(2)Mn(3)Cr(2)(CO)(19)](2-) (E = S, 3a; Se, 3b), respectively, upon the addition of 1 or 2 equiv of Cr(CO)(6) heated in refluxing CH(2)Cl(2). Clusters 3a and 3b were structurally related to clusters 1a and 1b, but with the other bare E atom (E = S, 3a; Se, 3b) further externally coordinated with one Cr(CO)(5) group. The nature, cluster transformation, and electrochemical properties of the mixed manganese-chromium carbonyl sulfides and selenides were systematically discussed in terms of the chalcogen elements, the introduced chromium carbonyl group, and the metal skeleton with the aid of molecular calculations at the BP86 level of the density functional theory.

  13. Synthesis and study of oxides and chalcogenides: Thin films and crystals

    Science.gov (United States)

    Park, Sangmoon

    Several types of solid-state inorganic materials are prepared and characterized. By using the SILAR (Successive Ionic Layer Adsorption and Reaction) deposition method in conjunction with hydrothermal dehydration both low-temperature deposition and crystallization of oxide thin films are achieved. Various aspects of new transparent p-type materials are studied by examining both powders and thin films. Delafossite type compounds, CuMO2+delta (M = Ga, Sc, In), are synthesized by unique methods, yielding single-phase materials. The conductivity, mobility, and carrier concentration in BaCu2S2 thin films are described and p-type conductivity in the wide band-gap sulfide fluoride, BaCuSF, is examined. Structural and conducting properties of the various polymorphs of In2Se3 and the related structure of Sb2Te 2Se are considered. Structural characterization and cation ordering in Langasite derivatives, La3SnGa5O14 and La3SnGa3Al2O14, is described. Finally, selected aspects of the synthesis, structural characterization, and luminescence properties of Y3(SiO4)2Cl, Mn:Zn 2SiO4, and Eu:Y6WO12 are summarized.

  14. Synthesis of cadmium chalcogenide based quantum dots for enhanced multiple exciton generation

    OpenAIRE

    2014-01-01

    Quantum dots (QDs) have the potential to produce more than one exciton per incident photon, if the photon energy is greater than twice the band gap energy. This process of multiple exciton generation (MEG) has the potential to lead to a step change in the efficiency of solar panels, by utilising energy commonly wasted as heat in conventional solar cells. A wide range of CdSe/CdTe and CdTe/CdSe quantum dots with and without a CdS shell were synthesised with varying core sizes and shell thickne...

  15. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  16. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Mokurala, Krishnaiah; Baranowski, Lauryn L.; de Souza Lucas, Francisco W.; Siol, Sebastian; van Hest, Maikel F. A. M.; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  17. Nickel: The time-reversal symmetry conserving partner of iron on a chalcogenide topological insulator

    Science.gov (United States)

    Vondráček, M.; Cornils, L.; Minár, J.; Warmuth, J.; Michiardi, M.; Piamonteze, C.; Barreto, L.; Miwa, J. A.; Bianchi, M.; Hofmann, Ph.; Zhou, L.; Kamlapure, A.; Khajetoorians, A. A.; Wiesendanger, R.; Mi, J.-L.; Iversen, B.-B.; Mankovsky, S.; Borek, St.; Ebert, H.; Schüler, M.; Wehling, T.; Wiebe, J.; Honolka, J.

    2016-10-01

    We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect is noted as a missing x-ray magnetic circular dichroism for resonant L3 ,2 transitions into partially filled Ni 3 d states of theory-derived occupancy nd=9.2 . On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations, we are able to relate the element specific moment formation to a local Stoner criterion. Our theory shows that while Fe adatoms form large spin moments of ms=2.54 μB with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, nonmagnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study the off-on effects of time-reversal symmetry breaking on topological surface states.

  18. Optical field-induced surface relief formation on chalcogenide and azo-benzene polymer films

    Science.gov (United States)

    Teteris, J.; Gertners, U.

    2012-08-01

    The dependence of the surface relief formation in amorphous As2S3 and Disperse Red 1dye grafted polyurethane polymer films on the polarization state of recording light was studied. It is shown that the direction of mass transport on the film surface is determined by the direction of light electric vector and photoinduced anisotropy in the film. We propose a photoinduced dielectropfhoretic model to explain the photoinduced mass transport in amorphous films. Model is based on the photoinduced softening of the matrix, formation of defects with enhanced or decreased polarizability, and their drift under the electrical field gradient of light.

  19. Probing the interface between semiconducting nanocrystals and molecular metal chalcogenide surface ligands: insights from first principles

    Science.gov (United States)

    Scalise, Emilio; Wippermann, Stefan; Galli, Giulia; Talapin, Dmitri

    Colloidal nanocrystals (NCs) are emerging as cost-effective materials offering exciting prospects for solar energy conversion, light emission and electronic applications. Recent experimental advances demonstrate the synthesis of fully inorganic nanocrystal solids from chemical solution processing. The properties of the NC-solids are heavily determined by the NCs surface and their interactions with the host matrix. However, information on the atomistic structure of such composites is hard to obtain, due to the complexity of the synthesis conditions and the unavailability of robust experimental techniques to probe nanointerfaces at the microscopic level. Here we present a systematic theoretical study of the interaction between InAs and InP NCs with Sn2S64- ligands. Employing a grand canonical ab initio thermodynamic approach we investigate the relative stability of a multitude of configurations possibly realized at the NC-ligand interface. Our study highlights the importance of different structural details and their strong impact on the resulting composite's properties. We show that to obtain a detailed understanding of experimental data it is necessary to take into account complex interfacial structures beyond simplified NC-ligand model interfaces. S. W. acknowledges BMBF NanoMatFutur Grant No. 13N12972. G.G. acknowledges DOE-BES for funding part of this work.

  20. CASHEW NUT SHELLS AS SOURCE OF CHEMICALS FOR PREPARATION OF CHALCOGENIDE NANOPARTICLES

    OpenAIRE

    MUBOFU E.B.; MLOWE S.; N. Revaprasadu

    2016-01-01

    Cashew nut shell wastes produced in cashew nut processing factories cause environmental problems. Currently, these wastes are being converted to a variety of bio-based chemicals and functional materials. Cashew nut shells (CNS) produce cashew nut shell liquid (CNSL), a dark reddish brown viscous liquid ( ca. 30 35 wt. %) which is extracted from the soft honeycomb of the CNS. CNSL offers multitude interesting possibilities for the synthesis of speciality chemicals, high value products and poly...

  1. Energy Transfer between Post-Transition Elements & Rare Earths in Oxide & Chalcogenide Glasses.

    Science.gov (United States)

    1979-08-27

    Israel. ***Laboratoirc de Chimie Minerale Structurale associ& au CNRS, Faculte des Sciences Phanmaccutiques et Biologiques, 4 avenue de l’Observatoire...Di’part’oznnt de Chime minerale , anlvtique et appliqtue, Unitersity of Geneva, Stt it.-er/and \\Nr)N SPE(TOR Soreq Nu’tclear Re search Center. avne, Israel

  2. Analyses of structure and spectroscopic property in amorphous oxides and chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Iwadate, Yasuhiko; Hattori, Takeo; Nishiyama, Shin; Fukushima, Kazuko; Yokota, Hideki [Chiba Univ. (Japan). Faculty of Engineering; Noda, Kenji; Nakazawa, Tetsuya

    1998-01-01

    Li{sub 2}O-TeO{sub 2} glasses studied in the present work are known to possess high densities, refractive indexes, dielectric constants, and transmittance against the lights at infrared wavelength region. In spite of their usefulness, there exists little work on the short range structure of Li{sub 2}O-TeO{sub 2} glasses analyzed by not spectroscopy but diffraction experiments. The structure of Li{sub 2}O(15mol%)-TeO{sub 2}(85mol%) and Li{sub 2}O(25mol%)-TeO{sub 2}(75mol%) glasses was analysed by X-ray diffraction in which an interpretation of the radial distribution function was discussed on the basis of the correlation method. (author)

  3. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2015-11-05

    Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

  4. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    Science.gov (United States)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-03-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes.

  5. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  6. Switching Plasmons: Gold Nanorod-Copper Chalcogenide Core-Shell Nanoparticle Clusters with Selectable Metal/Semiconductor NIR Plasmon Resonances.

    Science.gov (United States)

    Muhammed, Madathumpady Abubaker Habeeb; Döblinger, Markus; Rodríguez-Fernández, Jessica

    2015-09-16

    Exerting control over the near-infrared (NIR) plasmonic response of nanosized metals and semiconductors can facilitate access to unexplored phenomena and applications. Here we combine electrostatic self-assembly and Cd(2+)/Cu(+) cation exchange to obtain an anisotropic core-shell nanoparticle cluster (NPC) whose optical properties stem from two dissimilar plasmonic materials: a gold nanorod (AuNR) core and a copper selenide (Cu(2-x)Se, x ≥ 0) supraparticle shell. The spectral response of the AuNR@Cu2Se NPCs is governed by the transverse and longitudinal plasmon bands (LPB) of the anisotropic metallic core, since the Cu2Se shell is nonplasmonic. Under aerobic conditions the shell undergoes vacancy doping (x > 0), leading to the plasmon-rich NIR spectrum of the AuNR@Cu(2-x)Se NPCs. For low vacancy doping levels the NIR optical properties of the dually plasmonic NPCs are determined by the LPBs of the semiconductor shell (along its major longitudinal axis) and of the metal core. Conversely, for high vacancy doping levels their NIR optical response is dominated by the two most intense plasmon modes from the shell: the transverse (along the shortest transversal axis) and longitudinal (along the major longitudinal axis) modes. The optical properties of the NPCs can be reversibly switched back to a purely metallic plasmonic character upon reversible conversion of AuNR@Cu(2-x)Se into AuNR@Cu2Se. Such well-defined nanosized colloidal assemblies feature the unique ability of holding an all-metallic, a metallic/semiconductor, or an all-semiconductor plasmonic response in the NIR. Therefore, they can serve as an ideal platform to evaluate the crosstalk between plasmonic metals and plasmonic semiconductors at the nanoscale. Furthermore, their versatility to display plasmon modes in the first, second, or both NIR windows is particularly advantageous for bioapplications, especially considering their strong absorbing and near-field enhancing properties.

  7. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  8. Half-sandwich rhodium poly-chalcogenide complexes and a carbon insertion into Te-Te bond

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Treatment of CptRh(PMe3)Cl2(1) (Cpt = 5(- tBu2C5H3) with [Et4N]2Se6 in DMF solution leads to the formation of cyclo-tetraselenido half-sandwich rhodium complexes CptRh(PMe3)(Se4) (2). The elimination of 2 with excess of nBu3P results in cyclo-diselenido rhodium complex CptRh(PMe3)(Se2) (3). 1 reacts with [nBu4N]2Te5 in DMF solution to yield cyclo-ditellurido rhodium complex CptRh (PMe3)(Te2) (4) in which carbon atom from CH2Cl2 can be inserted into Te-Te bond to form CptRh(PMe3)(TeCH2Te) (5). The new complexes 2-5 have been characterized by their IR, EI-MS, and 1H, 13C, 31P, 103Rh NMR spectra as well as elemental analysis.

  9. Electronic structure of the iron chalcogenide KFeAgTe2 revealed by angle-resolved photoemission spectroscopy

    Science.gov (United States)

    Ang, R.; Nakayama, K.; Yin, W.-G.; Sato, T.; Lei, Hechang; Petrovic, C.; Takahashi, T.

    2013-10-01

    We have performed angle-resolved photoemission spectroscopy (ARPES) of KFeAgTe2, and revealed the absence of band crossing at the Fermi level (EF) indicative of the unconventional insulating nature of this material. Comparison of the ARPES-derived band dispersions with the first-principles calculations based on local density approximation and the inclusion of electron correlation U demonstrated that the ground state of KFeAgTe2 is not a simple band insulator. And also, our fitting result on the ARPES experimental density of states near EF plausibly excludes the possibility of Anderson insulator. We suggest that KFeAgTe2 is most likely a Mott insulator or a Hund insulator, providing a deep insight into the insulating ground state.

  10. Charge structure and cation distribution on Fe-Ga chalcogenide spinel by neutron diffraction and Moessbauer spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sam Jin; Son, Bae Soon; Shim, In Bo; Kim, Chul Sung [Kookmin University, Seoul (Korea, Republic of); Hong, Kun Pyo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    2005-07-01

    FeGa{sub x}Cr{sub 2-x}S{sub 4} (x=0.1 and 0.3) have been studied with x-ray, neutron difraction, and Moessbauer spectroscopy. Rietveld refinement of x-ray, neutron diffraction, and Moessbauer spectroscopy lead to the conclusion that the samples are in inverse spinel type, where the majority of Ga ions are present at tetrahedral site (A). The neutron diffractions on FeGa{sub x}Cr{sub 2-x}S{sub 4} (x=0.1) above 10 K show long range interaction behaviors and reveal an antiferromagnetic ordering, with the magnetic moment of Fe{sup 2+}(- 3.45 {mu}{sub B}) aligned antiparallel to Cr{sup 3+} (+2.89 {mu}{sub B}) at 10 K. Fe ions migrate from the tetrahedral (A) site to the octahedral (B) site with increase of Ga substitutions. The electric quadrupole splittings of the A and B sites in Moessbauer spectra give a direct evidence that Ga ion stimulate asymmetric charge distribution of Fe ions in the A site.

  11. Electrical and optical investigations in Te–Ge–Ag and Te–Ge–AgI chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Cui, S. [Glass and Ceramic Laboratory, Institute of Chemical Sciences of Rennes, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes cedex (France); Department of Materials Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Le Coq, D., E-mail: david.lecoq@univ-rennes1.fr [Glass and Ceramic Laboratory, Institute of Chemical Sciences of Rennes, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes cedex (France); Boussard-Plédel, C.; Bureau, B. [Glass and Ceramic Laboratory, Institute of Chemical Sciences of Rennes, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes cedex (France)

    2015-08-05

    Highlights: • Evolution of the electrical conductivities in Ag and AgI-GeTe{sub 4} glasses. • We demonstrate a change of a conductivity type (electronic vs ionic) in AgI–GeTe{sub 4} glasses. • A structural model for Ag and AgI–GeTe{sub 4} glasses is proposed. • The role of Ag in the structure of the Ag and AgI–GeTe{sub 4} glasses is described. - Abstract: (GeTe{sub 4}){sub 100−x}Ag{sub x} and (GeTe{sub 4}){sub 100−x}(AgI){sub x} glasses were prepared by a melting-quenching method. The glass electrical conductivity was investigated by both electrochemical impedance spectroscopy at different temperatures from 283 K to 333 K and four-probe method at room temperature (293 K). Meanwhile, as a major factor determining the electrical conductivity of a solid, optical band gap was also studied. By comparing the electrical conductivity values and glass optical band gap evolution, it was found that (GeTe{sub 4}){sub 100−x}Ag{sub x} glasses are mainly electronic conductive. On the other hand, the electrical conductivities of (GeTe{sub 4}){sub 100−x}(AgI){sub x} glasses firstly show a monotonic decrease by increasing AgI up to 15 mol.%, and then an increase when the AgI content is higher than 15 mol.%. The activation energy E{sub a} and the pre-exponential factor σ{sub 0} show apparent turning point when AgI content is 15 mol.%, signifying a conductivity mechanism change. In this paper, correlations between the conductivity and hypothetical structures in (GeTe{sub 4}){sub 100−x}Ag{sub x} and (GeTe{sub 4}){sub 100−x}(AgI){sub x} glasses are done and the importance of the Ag role is underlined.

  12. On the atomistic origin of radiation-structural relaxation in chalcogenide glasses: the results of positron annihilation study

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, Ya. [Ivan Franko National University of Lviv, Faculty of Electronics, Lviv (Ukraine); Institute of Materials of Scientific Research Company ' ' Carat' ' , Lviv (Ukraine); Institute of Physics, Jan Dlugosz University, Czestochowa (Poland); Ingram, A. [Institute of Physics, Mathematics and Chemistry, Opole Technical University (Poland); Filipecki, J.; Hyla, M. [Institute of Physics, Jan Dlugosz University, Czestochowa (Poland)

    2011-11-15

    Instability effects caused by high-energy {gamma}-irradiation are studied in (As{sub 2}S{sub 3}){sub 1-x}(Sb{sub 2}S{sub 3}){sub x}glasses (x=0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy, the results being treated within two-state trapping model in both normal and high-measurement statistics. The observed decrease in positron trapping rate of the glasses tested just after {gamma}-irradiation was explained due to renovation of destroyed covalent chemical bonds. This process was governed by monomolecular single-exponential relaxation kinetics agreed well with corresponding changes in the fundamental optical absorption edge. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Tailoring on the nanoscale : Control over size, shape, composition and self-assembly of copper chalcogenide nanocrystals

    NARCIS (Netherlands)

    van der Stam, W.

    2016-01-01

    Semiconductor materials are commonplace in everyday life and most people could not live without them. Recently, colloidal semiconductor nanocrystals have gained a lot of interest, due to the possibility to precisely tune their optoelectronic properties by tuning the size and shape of the nanocrystal

  14. Crystallographic features related to a van der Waals coupling in the layered chalcogenide FePS3

    Science.gov (United States)

    Murayama, Chisato; Okabe, Momoko; Urushihara, Daisuke; Asaka, Toru; Fukuda, Koichiro; Isobe, Masahiko; Yamamoto, Kazuo; Matsushita, Yoshitaka

    2016-10-01

    We investigated the crystallographic structure of FePS3 with a layered structure using transmission electron microscopy and powder X-ray diffraction. We found that FePS3 forms a rotational twin structure with the common axis along the c*-axis. The high-resolution transmission electron microscopy images revealed that the twin boundaries were positioned at the van der Waals gaps between the layers. The narrow bands of dark contrast were observed in the bright-field transmission electron microscopy images below the antiferromagnetic transition temperature, TN ≈ 120 K. Low-temperature X-ray diffraction showed a lattice distortion; the a- and b-axes shortened and lengthened, respectively, as the temperature decreased below TN. We propose that the narrow bands of dark contrast observed in the bright-field transmission electron microscopy images are caused by the directional lattice distortion with respect to each micro-twin variant in the antiferromagnetic phase.

  15. Second-order susceptibility spectra for δ-BiB3O6 polymer nanocomposites deposited on the chalcogenide crystals

    Science.gov (United States)

    Kityk, I. V.; Chrunik, M.; Majchrowski, A.; Guidi, Mariangela Cestelli; Angelucci, Marco; Kamel, Gihan; Fedorchuk, A. O.; Pępczyńska, M.; Jaroszewicz, L. R.; Parasyuk, O.; Bolesta, I. M.; Kowerdziej, R.

    2015-07-01

    The optimized conditions for the enhancement of the second harmonic generation in the composites of the orthorhombic δ-BiB3O6:Pr3+ nanoparticles embedded in polyvinyl alcohol films and deposited on the AgGaGe2Se6, AgGaGe2.7Si0.3Se8 (90 mol.% AgGaGe3Se8 - 10 mol.% AgGaSi3Se8), and AgGaGe3Se8:Cu substrates were established. The highest second-order susceptibility was achieved during the Ag-Ga-Ge-Se crystalline substrates photo-illumination by nanosecond laser pulses of about 2900 nm wavelength. The effect was found to be completely reversible after the interruption of the photo-inducing stimulation. Complementary studies of Atomic Force Microscopy, AFM, X-ray Diffraction, XRD, and Fourier-Transform Infrared Spectroscopy, and DFT simulations of spectral dependences of the corresponding second-order nonlinear optical susceptibilities, were performed.

  16. A study of thermal stability and electrical switching behaviour of Ge-Te-In chalcogenide glass system

    Science.gov (United States)

    George, Achamma; Sushamma, D.; Predeep, P.; Asokan, S.

    2017-03-01

    Bulk Ge20Te80-xInx(x = 0, 6, 10 and 16) glasses are prepared by the conventional melt quenching technique. The crystallization mechanism is studied using differential scanning calorimetry performed at different heating rates under non-isothermal conditions. Also the electrical switching behavior of the given glass system has been investigated. The glass transition temperature (Tg), the peak crystallization temperature (Tp), the thermal stability (Tc-Tg), the average value of the activation energy for the glass transition (Eg), and the average value of the activation energy for crystallization (Ec), are calculated for the given glass system. The glasses studied are found to exhibit a current controlled negative-resistance behaviour and memory switching. Further, the switching voltage (Vt) is found to increase linearly with sample thickness in the range of 0.2-0.45 mm. It is observed that the variation of switching voltage (Vt) of Ge-Te-In glasses show a maximum value at an average coordination number = 2.52 (at x = 6, onset of rigidity percolation), there after decreases and a minimum is seen in the switching voltage at an average coordination number = 2.68 (at x = 14), which is likely to be the chemical threshold of the system. Beyond x = 14, switching voltage is found to increase again with composition.

  17. High quality factor and high sensitivity chalcogenide 1D photonic crystal microbridge cavity for mid-infrared sensing

    Science.gov (United States)

    Xu, Peipeng; Yu, Zenghui; Shen, Xiang; Dai, Shixun

    2017-01-01

    We present and theoretically investigate a mid-infrared (mid-IR) optical sensor based on a Ge11.5As24Se64.5 one-dimensional photonic crystal microbridge cavity (PhC-MC). Optimizing the structure of the PhC-MC strongly confines the resonant mode field to the air region, thereby greatly enhancing the overlap and interaction of the light field and target analytes. A high calculated sensitivity (2280 nm per refractive index unit) is achieved with a resonant wavelength of 4132 nm. The figure of merit of the device for sensing is extremely high (929,750) because of the high quality factor and sensitivity of the cavity. The sensing part of the cavity is also small (50×3 μm2). The proposed PhC-MC can be an ideal platform for on-chip integrated mid-IR optical sensing.

  18. Effects of stoichiometry and substitution in quasi-one-dimensional iron chalcogenide BaFe2S3

    Science.gov (United States)

    Hirata, Yasuyuki; Maki, Sachiko; Yamaura, Jun-ichi; Yamauchi, Touru; Ohgushi, Kenya

    2015-11-01

    The effects of off-stoichiometry and elemental substitution on electronic properties of iron-based ladder compound BaFe2S3 are investigated. Resistivity and magnetization are revealed to be quite sensitive to the stoichiometry of Fe atoms, and 10% deficiency at Fe sites reduces the antiferromagnetic transition temperature by 40 K. The antiferromagnetic transition temperature decreases even faster and collapses to zero with hole doping through 10% K substitution at the Ba site, while the antiferromagnetic ordering phase remains with electron doping through 20% Co substitution at the Fe site. Such electron-hole asymmetry is opposite to two-dimensional iron-based superconductors, and can be explained on the basis of both itinerant and localized electronic pictures.

  19. An optical study of vacuum evaporated Se 85-xTe 15Bi x chalcogenide thin films

    Science.gov (United States)

    Ambika; Barman, P. B.

    2010-02-01

    Thin films of Se 85-xTe 15Bi x ( x=0, 1, 2, 3, 4, 5) glassy alloys prepared by melt quenching technique, are deposited on glass substrate using thermal evaporation technique under vacuum. The analysis of transmission spectra, measured at normal incidence, in the spectral range 400-1500 nm helphelps us in the optical characterization of thin films under study. Well -known Swanepoel's method is employed to determine the refractive index ( n) and film thickness ( d). The increase in n with increasing Bi content over the entire spectral range is related to the increased polarizability of the larger Bi atom (atomic radius 1.46 Å) compared with the Se atom (atomic radius 1.16 Å). Dispersion energy ( E d), average energy gap ( E0) and static refractive index ( n0) isare calculated using Wemple-DiDomenico model (WDD). The value of absorption coefficient ( α) and hence extinction coefficient ( k) hashave been determined from transmission spectra. Optical band gap ( E g) is estimated using Tauc's extrapolation and is found to decrease from 1.46 to 1.24 eV with the Bi addition. This behavior of optical band gap is interpreted in terms of electronegativity difference of the atoms involved and cohesive energy of the system.

  20. Chemical bond approach to optical properties of some flash evaporated Se100-XSbX chalcogenide alloys

    Science.gov (United States)

    Muiva, C. M.; Sathiaraj, T. S.; Mwabora, J. M.

    2012-07-01

    Amorphous thin films of Se100 - XSbX (X = 1, 5, 10, 15 and 20) were synthesized by flash evaporation of the premelt quenched bulk samples. The optical properties were investigated from spectrophotometric measurements in the UV-VIS-NIR spectral region using Swanepoel's standard envelope method and related techniques. The optical band gap energy (Egopt) was evaluated from the Wemple-Didomenico (WDD) single oscillator model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Egopt and oscillator energy Eo were found to decrease monotonously with increasing Sb additive. The complex dielectric constant (ɛ), Urbach energy (Eu), optical conductivity (σ), plasma frequency (ωp) and lattice dielectric constant (ɛL) were deduced for each alloy composition. The complex refractive index (n) fitted well to Sellmeier function which can allow extrapolation of n outside the measured spectral range. The observed changes in optical parameters with Sb content were explained on the basis of increased defect states and changes in cohesive energy indicators (average heat of atomization (Hs), mean coordination number and average single bond energy (Hs/).

  1. Nonlinear switching in a two-concentric-core chalcogenide glass optical fiber for passively mode-locking a fiber laser.

    Science.gov (United States)

    Nazemosadat, Elham; Mafi, Arash

    2014-08-15

    We propose an all-fiber mode-locking device, which operates based on nonlinear switching in a novel two-concentric-core fiber structure. The design is particularly attractive given the ease of fabrication and coupling to other components in a mode-locked fiber laser cavity. The nonlinear switching in this coupler is studied, and the relative power transmission is obtained. The analysis shows that this nonlinear switch is practical for mode-locking fiber lasers and is forgiving to fabrication errors.

  2. Role of thermal history in atomic dynamics of chalcogenide glass: A case study on Ge20Te80 glass

    Science.gov (United States)

    Sharma, Yashika; Kalra, Geetanjali; Murugavel, Sevi

    2016-05-01

    The non-existence of thermodynamic equilibrium in glasses, their thermal history plays a very crucial role in explaining the relaxation behavior in various time scales and its configurational states. More importantly, the associated relaxation behavior is related mainly to the structural phenomenon of the glasses. Here, we report the dependence of quenching rate on the variation of structural units. The local structures of these glasses are monitored by recording the Raman spectroscopy and related to the different configurational states. The observed variations in structural differences are reflected in the measured density of the corresponding glasses. The quenching rate dependent of the relative fractions of edge-shared and corner-shared GeTe4 tetrahedral units are shown to be consistent with the corresponding variations in the measured density values.

  3. Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goodman, Samuel M.; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Noh, Hyunwoo [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Cha, Jennifer N. [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); BioFrontiers Institute, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

    2015-02-23

    Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

  4. Calculation of the lattice dynamics and Raman spectra of copper zinc tin chalcogenides and comparison to experiments

    Science.gov (United States)

    Khare, Ankur; Himmetoglu, Burak; Johnson, Melissa; Norris, David J.; Cococcioni, Matteo; Aydil, Eray S.

    2012-04-01

    The electronic structure, lattice dynamics, and Raman spectra of the kesterite, stannite, and pre-mixed Cu-Au (PMCA) structures of Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) were calculated using density functional theory (DFT). Differences in longitudinal and transverse optical (LO-TO) splitting in kesterite, stannite, and PMCA structures can be used to differentiate them. The Γ-point phonon frequencies, which give rise to Raman scattering, exhibit small but measurable shifts, for these three structures. Experimentally measured Raman scattering from CZTS and CZTSe thin films were examined in light of DFT calculations and deconvoluted to explain subtle shifts and asymmetric line shapes often observed in CZTS and CZTSe Raman spectra. Raman spectroscopy in conjunction with ab initio calculations can be used to differentiate between kesterite, stannite, and PMCA structures of CZTS and CZTSe.

  5. Refractive index dispersion of chalcogenide glasses for ultra-high numerical-aperture fiber for mid-infrared supercontinuum generation

    DEFF Research Database (Denmark)

    Dantanarayana, Harshana G.; Abdel-Moneim, Nabil; Tang, Zhuoqi

    2014-01-01

    is measured over the 0.4 μm–33 μm wavelength-range, probing the electronic and vibrational behavior of these glasses. We verify that a two-term Sellmeier model is unique and sufficient to describe the refractive index dispersion over the wavelength range for which the experimentally determined extinction...

  6. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Arnou, Panagiota; van Hest, Maikel F. A. M.; Cooper, Carl S.; Malkov, Andrei V.; Walls, John M.; Bowers, Jake W.

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  7. Stimulated Brillouin scattering in highly birefringent multimode tapered chalcogenide photonic crystal fiber for distributed optical sensors (Retraction Notice)

    Science.gov (United States)

    Baili, Amira; Cherif, Rim; Zghal, Mourad

    2016-09-01

    This paper, originally published on September 15, 2016, was retracted from the SPIE Digital Library on October 5, 2016, due to a high degree of similarity between specific portions of the text of the paper to the following publications: J. Tchahame, J. Beugnot, A. Kudlinski, and T. Sylvestre, "Multimode Brillouin spectrum in a long tapered birefringent photonic crystal fiber," Opt. Lett. 40, 4281-4284 (2015). doi: 10.1364/OL.40.004281 W. W. Ke, X. J. Wang and X. Tang, "Stimulated Brillouin Scattering Model in Multi-Mode Fiber Lasers," in IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, no. 5, pp. 305-314, Sept.-Oct. 2014. doi: 10.1109/JSTQE.2014.2303256.

  8. Mid-infrared supercontinuum generation in concatenated fluoride and chalcogenide glass fibers covering more than three octaves

    DEFF Research Database (Denmark)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech;

    2014-01-01

    Supercontinuum is generated in concatenated ZBLAN and As2Se3 fibers. Initially, a 0.9-4.1mm supercontinuum is obtained by pumping the ZBLAN fiber with a Tm laser, which then continues to broaden to 0.9-9um in As2Se3 fiber...

  9. Laser induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} chalcogenide nano colloids

    Energy Technology Data Exchange (ETDEWEB)

    Tintu, R., E-mail: tintu_tillanivas@yahoo.co.in [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India); Nampoori, V.P.N.; Radhakrishnan, P.; Thomas, Sheenu [International School of Photonics, Cochin University of Science and Technology, Cochin 689110 (India); Unnikrishnan, N.V. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India)

    2013-04-01

    We report the observation of two-photon induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} nano colloid solutions using frequency doubled Nd:YAG laser. Quadratic emission intensity dependence verifies the two photon absorption for the observed luminescence at an excitation of 532 nm. The optical band gap of the material is found to be tunable depending on the cluster size of the nano colloids. The cluster formation and the dependence of the cluster size with concentration were confirmed by the SEM analysis. Confocal imaging was done to confirm the emission from the clusters in the nano colloid solutions.

  10. Kinetics of Amorphous-Crystalline Transformation of Some Se-Te-In Chalcogenide Glasses Using Gao and Wang Model

    OpenAIRE

    Balbir Singh Patial; Nagesh Thakur; S.K. Tripathi

    2013-01-01

    The present study reports the assessment of activation energy for crystallization and crystallization reaction order (Avrami exponent n) for the amorphous-crystallization transformation process of Se85 − xTe15Inx (x  2, 6 and 10) amorphous alloys using differential scanning calorimetry (DSC) technique under non-isothermal conditions at four different heating rates (5, 10, 15 and 20 °C/min) through Gao and Wang model. The introduction of In to the Se-Te system is found to bring a change in cr...

  11. Thermally Activated Photoconduction and Alternating-Current Conduction in Se75Ge20Ag5 Chalcogenide Glass: Investigation of Meyer-Neldel Rule

    Institute of Scientific and Technical Information of China (English)

    R. S. Sharma; N. Mehta; A. Kumar

    2008-01-01

    We report on the observation of Meyer-Neldel rule in glassy Se75Ge20Ag5 alloy where △E is varied by two different methods. In the first approach, the intensity of light varies while measuring the photoconductivity in amorphous thin films of Se75Ge20Ag5 instead of changing composition of the glassy system. In the second approach, the variation of ac conductivity with temperature is found to be exponential and the activation energy is found to vary with frequency.

  12. Electric transport of a single-crystal iron chalcogenide FeSe superconductor: Evidence of symmetry-breakdown nematicity and additional ultrafast Dirac cone-like carriers

    Science.gov (United States)

    Huynh, K. K.; Tanabe, Y.; Urata, T.; Oguro, H.; Heguri, S.; Watanabe, K.; Tanigaki, K.

    2014-10-01

    An SDW antiferromagnetic (SDW-AF) low-temperature phase transition is generally observed and the AF spin fluctuations are considered to play an important role for the superconductivity pairing mechanism in FeAs superconductors. However, a similar magnetic phase transition is not observed in FeSe superconductors, which has caused considerable discussion. We report on the intrinsic electronic states of FeSe as elucidated by electric transport measurements under magnetic fields using a high quality single crystal. A mobility spectrum analysis, an ab initio method that does not make assumptions on the transport parameters in a multicarrier system, provides very important and clear evidence that another hidden order, most likely the symmetry broken from the tetragonal C4 symmetry to the C2 symmetry nematicity associated with the selective d -orbital splitting, exists in the case of superconducting FeSe other than the AF magnetic order spin fluctuations. The intrinsic low-temperature phase in FeSe is in the almost compensated semimetallic states but is additionally accompanied by Dirac cone-like ultrafast electrons ˜104cm2(VS) -1 as minority carriers.

  13. Thermophysical properties and conduction mechanisms in AsxSe1-x chalcogenide glasses ranging from x = 0.2 to 0.5

    Science.gov (United States)

    Lonergan, Jason; Smith, Charmayne; McClane, Devon; Richardson, Kathleen

    2016-10-01

    The arsenic (As) to selenium (Se) ratio in AsxSe1-x glasses ranging from x = 0.2 to 0.5 was varied in order to examine the effect of chemical and topological ordering on the glass' thermal transport behavior. The fundamental thermal properties of glass transition temperature (Tg), thermal conductivity ( k ), and heat capacity ( cp ) were experimentally measured using differential scanning calorimetry, transient plane source method, and ultrasonic testing. Based on topological constraint theory, inflections in Tg and k were found at the structural coordination number ⟨r⟩ of 2.4, whereas a slight increase in heat capacity ( cp ) with increasing ⟨r⟩ was observed. A maximum in total thermal conductivity of 0.232 W/m.K was measured for the composition with x = 0.4, which corresponds to the stoichiometric As2Se3. Gas kinetic theory was used to derive an expression for the photon ( kp ) portion of thermal conductivity, which was calculated by measurements of the glass' absorption coefficient (α) and refractive index (n). Models based on Debye theory were used to derive expressions for specific heat ( cv ) and the lattice ( kl ) portion of thermal conductivity. The maximum value for kp was 0.173 W/m.K for the composition with x = 0.2, and a minimum value of 0.144 W/m.K was measured for the composition with x = 0.4. Photonic conduction was found to be the dominant carrier mechanisms in all compositions, comprising 60% to 95% of the measured total thermal conductivity.

  14. Far-infrared study of amorphous Ge{sub 0.17}Se{sub 0.83-x}Sb{sub x} chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Parikshit [Department of Physics, H.P. University, Summer Hill, Shimla 171005 (India)], E-mail: sharma_parikshit@yahoo.com; Rangra, V.S. [Department of Physics, H.P. University, Summer Hill, Shimla 171005 (India); Sharma, Pankaj [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 (India)], E-mail: pankaj.sharma@juit.ac.in; Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 (India)

    2009-07-08

    Far-infrared transmission spectra of Ge{sub 0.17}Se{sub 0.83-x}Sb{sub x} (x = 0, 0.03, 0.09, 0.12, 0.15) glassy alloys are obtained in the spectral range 500-200 cm{sup -1} at room temperature. The results are interpreted in terms of the vibrations of the isolated molecular units, in such a way as to preserve fourfold and twofold coordination for Ge and Se atoms, respectively. In the Ge{sub 0.17}Se{sub 0.83} bulk glass the main absorption bands appear at {approx}250 cm{sup -1} and 300 cm{sup -1}. With the increase in Sb content some new bands start appearing at 228-231 cm{sup -1} and 250-260 cm{sup -1}. Theoretical calculations (bond energy, relative probability density of bond formation, force constant and wave number) were also made to justify the results.

  15. 硫系薄膜的力学及摩擦性能研究%Study on Anti-compression and Friction Properties of Chalcogenide Films

    Institute of Scientific and Technical Information of China (English)

    聂德品

    2008-01-01

    利用电子回旋共振CVD设备制备了一种硫系GeSbTe薄膜,并用纳米硬度计考察了其抗压性能,同时采用划痕实验以及摩擦力显微镜研究了GeSbTe薄膜的摩擦特性.结果表明:GeSb2Te4膜的微观抗载荷性能随着膜厚的增加而显著增强;对于90nm厚度的GeSb2Te4来说,施加1000霳左右的载荷所获得的硬度和弹性模量值受基体的影响较小,分别为2.07GPa、38.70GPa;湿度对Ge2Sb2Te5膜和针尖粘附的影响没有GeSb2Te明显,而且粘附力的存在会改变摩擦系数.

  16. Mid-infrared supercontinuum generation in tapered chalcogenide fiber for producing octave-spanning frequency comb around 3 {\\mu}m

    CERN Document Server

    Marandi, Alireza; Plotnichenko, Victor G; Dianov, Evgeny M; Vodopyanov, Konstantin L; Byer, Robert L

    2012-01-01

    We demonstrate mid-infrared (mid-IR) supercontinuum generation (SCG) with instantaneous bandwidth from 2.2 to 5 {\\mu}m at 40 dB below the peak, covering the wavelength range desirable for molecular spectroscopy and numerous other applications. The SCG occurs in a tapered As2S3 fiber prepared by in-situ tapering and is pumped by femtosecond pulses from the subharmonic of a mode-locked Er-doped fiber laser. Interference with a narrow linewidth c.w. laser verifies that the coherence properties of the near-IR frequency comb have been preserved through these cascaded nonlinear processes. With this approach stable broad mid-IR frequency combs can be derived from commercially available near-IR frequency combs without an extra stabilization mechanism.

  17. Mid-infrared supercontinuum generation in chalcogenide step-index fibers pumped at 2.9 and 4.5µm

    DEFF Research Database (Denmark)

    Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech;

    The Mid-InfraRed (MIR) spectral range (2-12µm) contains the spectral fingerprint of many organic molecules, which can be probed nondestructively for e.g. detection of skin cancer. For this SuperContinuum (SC) laser sources are good candidates since they can have broadband bandwidths together...

  18. Simultaneous measurements of thermal conductivity and diffusivity of Se80Te20–In ( = 2, 4, 6 and 10) chalcogenide glasses at room temperature

    Indian Academy of Sciences (India)

    N S Saxena; Mousa M A Imran; Kedar Singh

    2002-06-01

    Measurements of thermal conductivity and thermal diffusivity of twin pellets of Se80Te20–In ( = 2, 4, 6 and 10) glasses, prepared under a load of 5 tons were carried out at room temperature using transient plane source (TPS) technique. The measured values of both thermal conductivity and diffusivity were used to determine the specific heat per unit volume of the said materials in the composition range of investigation. Results indicated that both the values of thermal conductivity and thermal diffusivity increased with the addition of indium at the cost of tellurium whereas the specific heat remained almost constant. This compositional dependence behaviour of the thermal conductivity and diffusivity has been explained in terms of the iono-covalent type of bond which In makes with Se as it is incorporated in the Se–Te glass.

  19. Metal mono-chalcogenides ZnX and CdX (X = S, Se and Te) monolayers: Chemical bond and optical interband transitions by first principles calculations

    Science.gov (United States)

    Safari, Mandana; Izadi, Zohreh; Jalilian, Jaafar; Ahmad, Iftikhar; Jalali-Asadabadi, Saeid

    2017-02-01

    In this paper, we explore the structural, electronic and optical properties of ZnX and CdX (X = S, Se and Te) compounds in the two-dimensional (2D) graphene-like structure using the full potential augmented plane waves plus local orbitals (FP-APW + lo) method. Unlike their bulk phase, they are optically inactive because of their indirect band gap nature except CdS and ZnS. These two compounds maintain their direct band gap nature and hence are optically active. The static dielectric constants for these monolayers illustrate increasing trend with decrease in the band gap values. Furthermore, an acceptable description of electron transitions in these monolayers is accomplished according to the imaginary parts of the dielectric functions and absorption spectra in ZnS and CdS as examples of each group of CdX and ZnX. The results presented in this article revealed that ZnS and CdS in the 2D structure can be effectively used in optoelectronic devices such as solar cell materials and so forth.

  20. Pseudocapacitive Na-Ion Storage Boosts High Rate and Areal Capacity of Self-Branched 2D Layered Metal Chalcogenide Nanoarrays.

    Science.gov (United States)

    Chao, Dongliang; Liang, Pei; Chen, Zhen; Bai, Linyi; Shen, He; Liu, Xiaoxu; Xia, Xinhui; Zhao, Yanli; Savilov, Serguei V; Lin, Jianyi; Shen, Ze Xiang

    2016-11-22

    The abundant reserve and low cost of sodium have provoked tremendous evolution of Na-ion batteries (SIBs) in the past few years, but their performances are still limited by either the specific capacity or rate capability. Attempts to pursue high rate ability with maintained high capacity in a single electrode remains even more challenging. Here, an elaborate self-branched 2D SnS2 (B-SnS2) nanoarray electrode is designed by a facile hot bath method for Na storage. This interesting electrode exhibits areal reversible capacity of ca. 3.7 mAh cm(-2) (900 mAh g(-1)) and rate capability of 1.6 mAh cm(-2) (400 mAh g(-1)) at 40 mA cm(-2) (10 A g(-1)). Improved extrinsic pseudocapacitive contribution is demonstrated as the origin of fast kinetics of an alloying-based SnS2 electrode. Sodiation dynamics analysis based on first-principles calculations, ex-situ HRTEM, in situ impedance, and in situ Raman technologies verify the S-edge effect on the fast Na(+) migration and reversible and sensitive structure evolution during high-rate charge/discharge. The excellent alloying-based pseudocapacitance and unsaturated edge effect enabled by self-branched surface nanoengineering could be a promising strategy for promoting development of SIBs with both high capacity and high rate response.

  1. Theoretical Study of Role of Sb in Se_0.85-xTe_0.15Sbx Chalcogenide Glass in Influencing Glass Transition Temperature

    Science.gov (United States)

    Maharjan, N. B.; Paudyal, D. D.; Jeong, J.; Scheicher, R. H.; Das, T. P.

    2001-03-01

    The influence of Sb impurity on glass transition temperature (Tg) has recently been studied using Differential Scanning Calorimetry(N. B. Maharjan et al., Phy. Stat. Sol. (a) 178, 663 (2000)). The results indicate that Tg initially increases with Sb concentration (x), reaching a maximum at 0.04, subsequently decreasing till x=0.06 and then becoming constant. Qualitative explanation of this behavior for Tg has been suggested^1 using earlier ideas in the literature regarding the role of Sb in the interaction between chains in the Se_1-xTex system and bond energy strength considerations involving Se-Se and Sb-Se bonds. These ideas are being tested quantitatively using Hartree-Fock Cluster procedures, previously utilized by our group for study(H. S. Cho et al., (to be published); H. S. Cho et al., Hyperfine Interactions 96, 213 (1995)) of nuclear quadrupole interactions including that of ^125Te in Selenium and Tellurium(P. Boolchand et al., Phys. Rev. Lett. 30, 1292 (1973)).

  2. Controllable Preparation of Square Nickel Chalcogenide (NiS and NiSe2) Nanoplates for Superior Li/Na Ion Storage Properties.

    Science.gov (United States)

    Fan, Haosen; Yu, Hong; Wu, Xinglong; Zhang, Yu; Luo, Zhongzhen; Wang, Huanwen; Guo, Yuanyuan; Madhavi, Srinivasan; Yan, Qingyu

    2016-09-28

    A facile and bottom-up approach has been presented to prepare 2D Ni-MOFs based on cyanide-bridged hybrid coordination polymers. After thermally induced sulfurization and selenization processes, Ni-MOFs were successfully converted into NiS and NiSe2 nanoplates with carbon coating due to the decomposition of its organic parts. When evaluated as anodes of Li-ion batteries (LIBs) and Na-ion batteries (NIBs), NiS and NiSe2 nanoplates show high specific capacities, excellent rate capabilities, and stable cycling stability. The NiS plates show good Li storage properties, while NiSe2 plates show good Na storage properties as anode materials. The study of the diffusivity of Li(+) in NiS and Na(+) in NiSe2 shows consistent results with their Li/Na storage properties. The 2D MOFs-derived NiS and NiSe2 nanoplates reported in this work explore a new approach for the large-scale synthesis of 2D metal sulfides or selenides with potential applications for advanced energy storage.

  3. The Be K-edge in beryllium oxide and chalcogenides: soft x-ray absorption spectra from first-principles theory and experiment.

    Science.gov (United States)

    Olovsson, W; Weinhardt, L; Fuchs, O; Tanaka, I; Puschnig, P; Umbach, E; Heske, C; Draxl, C

    2013-08-07

    We have carried out a theoretical and experimental investigation of the beryllium K-edge soft x-ray absorption fine structure of beryllium compounds in the oxygen group, considering BeO, BeS, BeSe, and BeTe. Theoretical spectra are obtained ab initio, through many-body perturbation theory, by solving the Bethe-Salpeter equation (BSE), and by supercell calculations using the core-hole approximation. All calculations are performed with the full-potential linearized augmented plane-wave method. It is found that the two different theoretical approaches produce a similar fine structure, in good agreement with the experimental data. Using the BSE results, we interpret the spectra, distinguishing between bound core-excitons and higher energy excitations.

  4. 远红外Ge-Te-Ag硫系玻璃的光学性能研究%Optical properties of Ge-Te-Ag far infrared chalcogenide glasses

    Institute of Scientific and Technical Information of China (English)

    何钰钜; 聂秋华; 王训四; 王国祥; 戴世勋; 徐铁峰; 张培全; ZHANG Xiang-hua; Bruno Bureaua

    2012-01-01

    A series of Ge-Te-Ag chaleogenide glasses were prepared by traditional melt-quenching method and the glass-forming region was determined. Archimides principle,X-ray diffraction (XRD),differential scanning calofimetry(DSC), ultra violet-visible-near infrared (UV-VIS-NIR) absorbtion spectrum, Fou-rier transform infrared spectrum(FTIR) were adopted to analyze physical,thermal and optical properties of sample glasses. The results show that the density of glasses increases with the increase of Ag. The glass forming ability and the thermostablity of the glasses are improved when Ag is doped in. In addi- tion,a red-shift occurs at the short-wavelength absorbtion cutoff edge while the infrared cutoff wave-length is nearly unchanged with the increasing of Ag. The wide infrared transmission of this glass system reveals that it may have great potential application in far-infrared material fields.%用熔融淬冷法制备了一系列Ge-Te-Ag硫系玻璃,并确定了玻璃态的成玻区。通过阿基米德排水法、X射线衍射(XRD)、差示扫描量热(DSC)、可见/近红外吸收(UV-VIS-NIR)光谱和傅里叶红外透射(FTIR)光谱等技术,研究了玻璃态的物理特性、热学特性以及光学特性。研究表明,玻璃态的密度随着Ag含量的增加而增大;Ag的掺入改善了玻璃态的形成能力和热稳定性;随着Ag含量的增加,玻璃态的短波吸收限发生了红移,而红外截止波长基本没变化;玻璃态有着较宽的红外透过范围(1.8~20.0μm),表明其在远红外领域具有很大的应用前景。

  5. Mid-infrared supercontinuum covering the 1.4–13.3 μm molecular fingerprint region using ultra-high NA chalcogenide step-index fibre

    DEFF Research Database (Denmark)

    Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis

    2014-01-01

    The mid-infrared spectral region is of great technical and scientific interest because most molecules display fundamental vibrational absorptions in this region, leaving distinctive spectral fingerprints. To date, the limitations of mid-infrared light sources such as thermal emitters, low...... the potential of fibres to emit across the mid-infrared molecular ‘fingerprint region’, which is of key importance for applications such as early cancer diagnostics3, gas sensing and food quality control....

  6. Solution-processed Cu2ZnSn(SxSe1-x)4 thin films based on binary and ternary chalcogenide nanoparticle precursors and their application in solar cells

    OpenAIRE

    2013-01-01

    Cu2ZnSn(SxSe1-x)4 (CZTSSe) ist ein vielversprechendes Material um günstige Solarzellen mit hoher Effizienz herzustellen. In dieser Arbeit wurde ein kosteneffizienter Prozess für die Abscheidung von dünnen Schichten aus CZTSSe Absorbern entwickelt. Mittels Rotationbeschichtung von ZnS, SnS und Cu3SnS4 (CTS) Nanopartikel-Tinte wurden die CZTSSe Absorber in einem vierstufigen Prozess hergestellt. Im ersten Schritt werden jeweils ZnS, SnS und CTS Nanopartikel durch Aufheizen in einem kolloid...

  7. 基于硫系相变材料的存储机理和方法的研究进展%Research Progress on Method and Mechanism of Phase-change Medium Storage Based on Chalcogenide

    Institute of Scientific and Technical Information of China (English)

    解国新; 丁建宁; 范真; 付永忠; 杨继昌

    2005-01-01

    以GeSbTe及AgInSbTe等硫系合金化合物为载体,较全面地介绍了当前相变存储研究领域比较热门的几种存储方法,对各自的研究进展作了必要阐述,重点突出探针相变存储技术的研究方法,并对各种方法的优缺点进行了比较说明,同时结合自身研究实际,展示相变存储的研究方向和所取得的成果,并进一步列举了一些尚待解决的问题,指出了其今后发展的一般趋势.

  8. Two new ternary chalcogenides Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) with chains of ZnQ{sub 4} tetrahedra. Syntheses, crystal structure, and optical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai; Beard, Jessica; Malliakas, Christos D.; Ibers, James A. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Mesbah, Adel [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; ICSM, UMR 5257 CEA/CNRS/UM2/ENSCM, Bagnols-sur-Ceze (France); Rocca, Dario; Lebegue, Sebastien [Univ. de Lorraine, Vandoeuvre-les-Nancy (France). Lab. de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036)

    2016-08-01

    Single crystals of Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) were obtained by solid-state reactions at 1173 K. These isostructural compounds crystallize in the K{sub 2}AgI{sub 3} structure type. The Zn atoms in this structure are coordinated to four Q atoms (2 Q1, 1 Q2, 1 Q3) and these form a distorted tetrahedron around each Zn atom. Each ZnQ{sub 4} tetrahedron shares two corners with neighboring ZnQ{sub 4} tetrahedra resulting in the formation of infinite chains of [ZnQ{sub 4}{sup 4-}] units. The absorption spectrum of a single crystal of Ba{sub 2}ZnTe{sub 3} shows an absorption edge at 2.10(2) eV, consistent with the dark-red color of the crystals. From DFT calculations Ba{sub 2}ZnSe{sub 3} and Ba{sub 2}ZnTe{sub 3} are found to be semiconductors with electronic band gaps of 2.6 and 1.9 eV, respectively.

  9. Thermoelectric, band structure, chemical bonding and dispersion of optical constants of new metal chalcogenides Ba{sub 4}CuGa{sub 5}Q{sub 12} (Q=S, Se)

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A.H. [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Azam, Sikander, E-mail: sikander.physicst@gmail.com [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic)

    2014-08-01

    The electronic structure and dispersion of optical constants of the Ba{sub 4}CuGa{sub 5}S{sub 12} and Ba{sub 4}CuGa{sub 5}Se{sub 12} compounds were calculated by the first-principles full-potential linearized augmented plane wave (FPLAPW) method. We employed the local density approximation (LDA), generalized gradient approximation (GGA) and Engel–Vosko GGA (EVGGA) to calculate the electronic structures, Fermi surface, thermoelectric, chemical bonding and dispersion of optical constants of these compounds. By investigating the influence of replacing S by Se, it has been found that the charge density around ‘Ga’ is greater in Ba{sub 4}CuGa{sub 5}Se{sub 12} than Ba{sub 4}CuGa{sub 5}S{sub 12}. Fermi surface of Ba{sub 4}CuGa{sub 5}S{sub 12} consists of an electronic sheet only because there is no empty region while Ba{sub 4}CuGa{sub 5}Se{sub 12} contains both holes and electronic sheets because this compound contains both empty and shaded region. As we replace S by Se the heights of the peaks decreases as a results the reflectivity also decreases. It is noticed that the reflectivity is over 68% (60%) for Ba{sub 4}CuGa{sub 5}S{sub 12} (Ba{sub 4}CuGa{sub 5}Se{sub 12}) compounds within the energy range studied. This implies that the material will serve as a good reflector. By replacing S by Se the figure of merit values increases from 0.97 to 1.0, which shows the good thermoelectric behavior of both compounds. - Highlights: • DFT-FPLAPW method used for calculating the properties. • For predicting the chemical bonding the charge density behavior is studied in 2D. • The optical properties were also calculated and analyzed. • The Fermi surface is composed of two bands crossing along the EF level. • The thermoelectric properties have also been calculated.

  10. Phase separation in iron chalcogenide superconductor Rb0.8+xFe1.6+ySe2 as seen by Raman light scattering and band structure calculations

    Science.gov (United States)

    Pashkevich, Yu.; Gnezdilov, V.; Lemmens, P.; Shevtsova, T.; Gusev, A.; Lamonova, K.; Wulferding, D.; Gnatchenko, S.; Pomjakushina, E.; Conder, K.

    2016-06-01

    We report Raman light scattering in the phase separated superconducting single crystal Rb0.77Fe1.61Se2 with Tc = 32 K over a wide temperature region 3-500 K. The observed phonon lines from the majority vacancy ordered Rb2Fe4Se5 (245) antiferromagnetic phase with TN = 525 K demonstrate modest anomalies in the frequency, intensity and halfwidth at the superconductive phase transition. We identify phonon lines from the minority compressed RbδFe2Se2 (122) conductive phase. The superconducting gap with d x 2 - y 2 symmetry has been detected in our spectra. In the range 0-600 cm-1 we observe a weak but highly polarized B1g-type background which becomes well-structured upon cooling. A possible magnetic or multiorbital origin of this background is discussed. We argue that the phase separation in M0.8+xFe1.6+ySe2 is of pure magnetic origin. It occurs below the Néel temperature when the magnetic moment of iron reaches a critical value. We state that there is a spacer between the majority 245 and minority 122 phases. Using ab initio spin-polarized band structure calculations we demonstrate that the compressed vacancy ordered Rb2Fe4Se5 phase can be conductive and therefore may serve as a protective interface spacer between the purely metallic RbδFe2Se2 phase and the insulating Rb2Fe4Se5 phase providing percolative Josephson-junction like superconductivity all throughout of Rb0.8+xFe1.6+ySe2. Our lattice dynamics calculations show significant differences in the phonon spectra of the conductive and insulating Rb2Fe4Se5 phases.

  11. Characterization and study of reduction and sulfurization processing in phase transition from molybdenum oxide (MoO2) to molybdenum disulfide (MoS2) chalcogenide semiconductor nanoparticles prepared by one-stage chemical reduction method

    Science.gov (United States)

    Shomalian, K.; Bagheri-Mohagheghi, M.-M.; Ardyanian, M.

    2017-01-01

    In this research, molybdenum disulfide (MoS2) nanoparticles were prepared by chemical reduction method using MoO3 and thiourea as a precursor. The physical properties of the synthesized MoO2-MoS2 nanoparticles annealed at different temperatures of 200, 300, 750 °C have been investigated, before and after exposure to sulfur vapor. The nanostructure of nanoparticles has been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM) analyses and UV-Vis spectrophotometer. The X-ray diffraction analysis showed the formation of MoS2 single phase at annealing temperature of 750 °C in the presence of sulfur vapor. The Raman spectrum of the nanoparticles revealed that the formation of MoS2 at 750 °C after annealing in sulfur vapor. The values of band gap were obtained in the range of 3.64-3.17 eV and 3.47-1.95 eV for MoS2 nanoparticles before and after exposure to sulfur vapor, respectively. According to SEM images, the grain size decreases with increasing annealing temperature up to 750 °C. Also, nanoplate-nanoparticles of MoS2 are formed at annealing temperature of 200-750 °C. The TEM images of MoS2 nanoparticles at T a = 750 °C confirm that the nanoparticles have a homogeneous distribution with a hexagonal structure. The FTIR spectra of the MoS2 nanoparticles showed the peaks at about 467 cm-1 belong to the characteristic bands of Mo-S.

  12. Effects of laser irradiation on optical properties of amorphous and annealed Ga{sub 15}Se{sub 81}In{sub 4} and Ga{sub 15}Se{sub 79}In{sub 6} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdul Aziz University, Jeddah 21589 (Saudi Arabia); Khan, Shamshad A., E-mail: shamshad_phys@yahoo.co [Department of Physics, Faculty of Science, King Abdul Aziz University, Jeddah 21589 (Saudi Arabia); Al-Heniti, S.; Al-Agel, F.A.; Al-Harbi, T. [Department of Physics, Faculty of Science, King Abdul Aziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India)

    2010-08-27

    Amorphous thin films of Ga{sub 15}Se{sub 81}In{sub 4} and Ga{sub 15}Se{sub 79}In{sub 6} glassy alloys with thickness 3000 A were prepared by thermal evaporation onto chemically cleaned glass substrates. The changes in optical properties due to the influence of laser radiation on amorphous and thermally annealed thin films of Ga{sub 15}Se{sub 81}In{sub 4} and Ga{sub 15}Se{sub 79}In{sub 6} were calculated from absorbance and reflectance spectra as a function of photon energy in the wave length region 400-1000 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. The optical band gaps observed to decrease with the increase of annealing temperatures. Furthermore, exposing thin films to laser irradiation leads to a decrease in optical band gap, absorption coefficient, refractive index and extinction coefficient for both as-prepared and annealed films. The decrease in the optical band gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of annealing temperature and by laser irradiation for 10 min exposure time. Outcomes of our study confirm that this system may be used for photovoltaic devices.

  13. Synthesis and characterization of new N-(diphenylphosphino)-naphthylamine chalcogenides: X-ray structures of (1-NHC 10H 7)P(Se)Ph 2 and Ph 2P(S)OP(S)Ph 2

    KAUST Repository

    Tomah Al-Masri, Harbi

    2012-09-01

    The reaction of 1-naphthylamine with one equivalent of chlorodiphenylphosphine in the presence of triethylamine gave the (1-NHC 10H 7)PPh 2 (1) ligand. Refluxing of 1 with elemental sulfur or grey selenium in toluene (1:1 molar ratio) afforded (1-NHC 10H 7)P(S)Ph 2 (2) and (1-NHC 10H 7)P(Se)Ph 2 (3), respectively. Moreover, the byproduct {Ph 2P(S)} 2O (4) was isolated from the reaction of 1 with elemental sulfur. Compounds 1-3 were identified and characterized by multinuclear ( 1H, 13C, 31P, 77Se) NMR spectroscopy, mass spectrometry, and elemental analysis. Crystal structure determinations of 3 and 4 were carried out. Copyright © 2012 Taylor and Francis Group, LLC.

  14. Mean-field state population study for iron-based superconductors

    Science.gov (United States)

    Wang, Zhigang; Fu, Zhen-Guo; Zheng, Fa-Wei; Zhang, Ping

    2017-02-01

    The occupation number distribution in momentum space are theoretically studied within a two-orbital model, which can be unified describing the low-energy physics of the iron pnictides and iron chalcogenides. The mean-field approximation of Hubbard interaction is employed. By tuning the hopping parameters, the difference between the iron pnictides and iron chalcogenides in their occupation number distribution behavior can be clearly observed. The results show that when the pairing interaction tends to zero, the occupation number n (k) ≈ 0 at Γ point for iron chalcogenides while n (k) ≈ 2 at Γ point for iron pnictides. By increasing the strength of the pairing interaction to a large value, the change of n (k) at Γ point for iron chalcogenides (pnictides) is remarkable (unremarkable). In addition, we find that the effect of the nearest-neighbor coupling between the two layers, contained in the S4 model [Hu and Hao, (2012) [33

  15. Numerical study of propagation properties of surface plasmon polaritons in nonlinear media

    KAUST Repository

    Sagor, Rakibul Hasan

    2016-03-29

    We present a time-domain algorithm for simulating nonlinear propagation of surface plasmon polaritons (SPPs) in chalcogenide glass. Due to the high non-linearity property and strong dispersion and confinement chalcogenide glasses are widely known as ultrafast nonlinear materials. We have used the finite difference time domain (FDTD) method to develop the simulation algorithm for the current analysis. We have modeled the frequency dependent dispersion properties and third order nonlinearity property of chalcogenide glass utilizing the general polarization algorithm merged in the auxiliary differential equation (ADE) method. The propagation dynamics of the whole structure with and without third order nonlinearity property of chalcogenide glass have been simulated and the effect of nonlinearity on the propagation properties of SPP has been investigated. © 2016 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.

  16. 640 Gbit/s optical signal processing

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Galili, Michael; Mulvad, Hans Christian Hansen;

    2009-01-01

    Techniques for 640 Gbit/s generation, demultiplexing, clock recovery, add/drop multiplexing, wavelength conversion, transmission, channel identification and timing jitter tolerant switching is described. Various switching materials are explored, such as HNLF, SOA, chalcogenide, and PPLN.......Techniques for 640 Gbit/s generation, demultiplexing, clock recovery, add/drop multiplexing, wavelength conversion, transmission, channel identification and timing jitter tolerant switching is described. Various switching materials are explored, such as HNLF, SOA, chalcogenide, and PPLN....

  17. http://www.tkea.com.ua/tkea/2008/6_2008/pdf/12.zip

    Directory of Open Access Journals (Sweden)

    Kavetskyy T. S.

    2008-12-01

    Full Text Available It is established radiation-induced decreasing in fragility of structural network takes place for γ-irradiated sample of Ge15,8As21S63,2 chalcogenide glass. It is concluded on the basis of the results obtained that radiation modification of chalcogenide glass leads to the rigidity of its matrix, and the vibrational (boson contribution in the low-frequency spectral region is dominatе on the relaxation quasi-elastic scattering.

  18. Chemical welding of binary nanoparticles: room temperature sintering of CuSe and In2S3 nanoparticles for solution-processed CuInS(x)Se(1-x) solar cells.

    Science.gov (United States)

    Min Lim, Hui; Batabyal, Sudip K; Pramana, Stevin S; Wong, L H; Magdassi, Shlomo; Mhaisalkar, S G

    2013-06-14

    Chemical welding of oppositely charged dissimilar metal chalcogenide nanomaterials is reported to produce a quaternary metal chalcogenide. CuSe and In2S3 nanoparticles were synthesized with opposite surface charges by stabilizing with polyacrylic acid and polydiallyldimethylammonium chloride. Upon mixing these nanoparticles at room temperature, the electrostatic attraction induced coalescence of these nanoparticles and led to the formation of CuInSxSe1-x nanoparticles.

  19. Influence of Two Photon Absorption on Soliton Self-Frequency Shift

    DEFF Research Database (Denmark)

    Steffensen, Henrik; Rottwitt, Karsten; Jepsen, Peter Uhd;

    2011-01-01

    The creation of mid-infrared supercontinua necessitates the use of soft-glass fibers. However, some materials, like chalcogenide, have a substantial two photon absorption. We introduce a model for soliton self-frequency shift that successfully includes this effect.......The creation of mid-infrared supercontinua necessitates the use of soft-glass fibers. However, some materials, like chalcogenide, have a substantial two photon absorption. We introduce a model for soliton self-frequency shift that successfully includes this effect....

  20. Syntheses, Structure, Magnetism, and Optical Properties of the Ordered Interlanthanide Copper Chalcogenides Ln{sub 2}YbCuQ{sub 5} (Ln = La, Ce, Pr, Nd, Sm; Q = S, Se): Evidence for Unusual Magnetic Ordering in Sm{sub 2}YbCuS{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Geng Bang; Choi, Eun Sang; Guertin, Robert P.; Booth, Corwin H.; Albrecht-Schmitt, Thomas E.

    2010-11-19

    Ln{sub 2}YbCuQ{sub 5} (Ln = La, Ce, Pr, Nd, Sm; Q = S, Se) have been prepared by direct reaction of the elements in Sb{sub 2}Q{sub 3} (Q = S, Se) fluxes at 900 °C. All compounds have been characterized by single-crystal X-ray diffraction methods and they are isotypic. The structure of Ln{sub 2}YbCuQ{sub 5} consists of one-dimensional {sup 1}{sub {infinity}} [YbCuQ{sub 5}]{sup 6-} ribbons extending along the b axis that are connected by larger Ln{sup 3+} ions. Each ribbon is constructed from two single chains of [YbQ{sub 6}] octahedra with one double chain of [CuQ{sub 5}] trigonal bipyramids in the middle. All three chains connect with each other via edge-sharing. There are two crystallographically unique Ln atoms, one octahedral Yb site, and two disordered Cu positions inside of distorted Q{sub 5} trigonal bipyramids. Both Ln atoms are surrounded by eight Q atoms in bicapped trigonal prisms. The magnetic properties of Ln{sub 2}YbCuQ{sub 5} have been characterized using magnetic susceptibility and heat capacity measurements, while their optical properties have been explored using UV-vis-NIR diffuse reflectance spectroscopy. Cesub 2}YbCuSe{sub 5}, La{sub 2}YbCuS{sub 5}, Ce{sub 2}YbCuS{sub 5}, and Pr{sub 2}YbCuS{sub 5} are Curie-Weiss paramagnets. La{sub 2}YbCuSe{sub 5} and Nd{sub 2}YbCuS{sub 5} show evidence for short-range antiferromagnetic ordering at low temperatures. Sm{sub 2}YbCuS{sub 5} shows magnetic ordering at 5.9 K, followed by negative magnetization at low external fields. The band gaps of La{sub 2}YbCuSe{sub 5}, Ce{sub 2}YbCuSe{sub 5}, La{sub 2}YbCuS{sub 5}, Ce{sub 2}YbCuS{sub 5}, Pr{sub 2}YbCuS{sub 5}, Nd{sub 2}YbCuS{sub 5},and Sm{sub 2}YbCuS{sub 5} are 1.15 eV, 1.05 eV, 1.45 eV, 1.37 eV, 1.25 eV, 1.35 eV, and 1.28 eV respectively.

  1. FY 2004 Infrared Photonics Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Anheier, Norman C.; Allen, Paul J.; Keller, Paul E.; Bennett, Wendy D.; Martin, Peter M.; Johnson, Bradley R.; Sundaram, S. K.; Riley, Brian J.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

    2004-10-01

    Research done by the Infrared Photonics team at PNNL is focused on developing miniaturized integrated optics for the MWIR and LWIR by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin film deposition capabilities, direct-laser writing techniques, IR photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology - all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to Quantum Cascade Laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

  2. Second-order nonlinear optical properties of Ge-Ga-Ag-S glass irradiated by electron beam

    Institute of Scientific and Technical Information of China (English)

    TAO Hai-zheng; DONG Guo-ping; XIAO Hai-yan; LIN Chang-gui; ZHAO Xiu-jian

    2006-01-01

    Ge-Ga-Ag-S chalcogenide glasses with the composition Ge30Ga3Ag4S63 were obtained by the conventional melt-quenching method. According to the visible-infrared and infrared spectra,Ge30Ga3Ag4S63 chalcogenide glass possesses wide transmittance window from 510 nm in the visible region up to 11.5 ìm in the infrared region. And the present glass has better glass-forming ability (the difference between glass transition temperature and the peak temperature of crystallization is larger than 100 ℃). Utilizing maker-fringe technique,a prominent second-harmonic generation was observed in Ge30Ga3Ag4S63 chalcogenide glass after irradiated by an electron beam (Accelerating voltage: 25 kV:Irradiating current: 15 nA:Irradiating time: 10 min). And the mechanism of second-harmonic generation in the Ge-Ga-Ag-S system glasses was discussed.

  3. Solid State Synthesis and Crystal Structure of K3SI

    Institute of Scientific and Technical Information of China (English)

    ZHAO Zhen-Qian; LIU Xi; CHEN Wen-Tong; LI Yan; WU A-Qing; ZENG Hui-Yi; GUO Guo-Cong; HUANG Jin-Shun

    2006-01-01

    A new ternary alkali metal chalcogenide halide, K3SI, has been synthesized by solid state reaction method and structurally characterized by X-ray crystallography. The crystal belongs to hexagonal, space group P63cm with a = 11.699(1), c = 5.8279(9) (A), Mr = 276.26, V = 690.8(1)(A)3, Z = 6, Dc = 3.985 g/cm3, F(000) = 756, μ= 9.913 mm-1, S = 1.004, R = 0.0719 and wR = 0.2204. The title compound is the first example containing S anion in the ternary alkali metal chalcogenide halides family M3QX (M = alkali metal, Q = chalcogenide, X = halide), which crystallizes in the hexagonal anti-perovskite structure type.

  4. FY 2006 Infrared Photonics Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Anheier, Norman C.; Allen, Paul J.; Bernacki, Bruce E.; Ho, Nicolas; Krishnaswami, Kannan; Qiao, Hong (Amy); Schultz, John F.

    2006-12-28

    Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics and optical fiber processing methods for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

  5. Size quantization in Cu2Se nanocrystals

    Science.gov (United States)

    Govindraju, S.; Kalenga, M. P.; Airo, M.; Moloto, M. J.; Sikhwivhilu, L. M.; Moloto, N.

    2014-12-01

    Herein we report on the synthesis of size quantized copper selenide nanocrystals via the colloidal method. Different colours of the sample were obtained at different time intervals indicative of the sizes of the nanocrystals. The absorption band edges were blue-shifted from bulk indicative of quantum confinement. This was corroborated by the TEM results that showed very small particles ranging from 2 nm to 7 nm. This work therefore shows a phenomenon readily observed in cadmium chalcogenide nanocrystals but has never been reported for copper based chalcogenides.

  6. Bulk dimensional nanocomposites for thermoelectric applications

    Science.gov (United States)

    Nolas, George S

    2014-06-24

    Thermoelectric elements may be used for heat sensors, heat pumps, and thermoelectric generators. A quantum-dot or nano-scale grain size polycrystalline material the effects of size-quantization are present inside the nanocrystals. A thermoelectric element composed of densified Groups IV-VI material, such as calcogenide-based materials are doped with metal or chalcogenide to form interference barriers form along grains. The dopant used is either silver or sodium. These chalcogenide materials form nanoparticles of highly crystal grains, and may specifically be between 1- and 100 nm. The compound is densified by spark plasma sintering.

  7. Microstructure and Optical Properties of the (1-x)GeS2-xP2S5 Glasses

    Institute of Scientific and Technical Information of China (English)

    GONG Yueqiu; TAO Haizheng; ZHAO Xiujian

    2006-01-01

    To find materials with larger second-order nonlinearity, the Ge-P-S chalcogenide glasses with various ratios of GeS2∶P2S5 were prepared by the melt-quenching method. The microstructure and optical properties of these glasses were characterized by XRD, Raman, Vis-NIR spectroscopy and Maker fringe technique.The second harmonic generation (SHG) was observed in the as-prepared chalcogenide glasses which was ascribed to the thermal stress gradient and/or the microanisotropic defects (such as the lone-pair orbital or the valence alternative pairs) prefer-orientation of the as-prepared glasses.

  8. Adhesive As-S-Se-I immersion lenses for enhancing radiation characteristics of mid-IR LEDs operating in wide temperature range

    Science.gov (United States)

    Markov, Viktor A.; Semencha, Alexandr V.; Kurushkin, Mikhail V.; Kurushkin, Dmitry V.; Klinkov, Viktor A.; Petukhov, Andrey A.

    2016-09-01

    The influence of As-S-Se-I chalcogenide glass lenses on the integral and spectral power and pattern of LED radiation has been shown. Simulation of the influence of the refractive index on the integral power for two lens shapes has been performed. The wettability and adhesion force of As-S-Se-I melt has been determined for several electronic engineering materials. Mechanical stresses between chalcogenide glass and adjacent diode body materials have been calculated for -100 to 53 °C temperature range. Stability of the immersion lenses against cracking has been experimentally investigated for -150 to 53 °C temperature range.

  9. NaBH{sub 4}/[bmim]BF{sub 4}: a new reducing system to access vinyl selenides and tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Lenardao, Eder J.; Goncalves, Loren C.C.; Mendes, Samuel R.; Saraiva, Maiara T.; Alves, Diego; Jacob, Raquel G.; Perin, Gelson, E-mail: lenardao@ufpel.edu.b [Universidade Federal de Pelotas (UFPel), RS (Brazil). Inst. de Quimica e Geociencias. Lab. de Sintese Organica Limpa (LASOL)

    2010-07-01

    A general and simple method for the synthesis of vinyl selenides and tellurides starting from terminal alkynes and diorganyl chalcogenides using NaBH{sub 4} and [bmim]BF{sub 4} as a recyclable solvent was developed. This efficient and improved method furnishes the corresponding vinyl chalcogenides preferentially with Z configuration. We also observed that when the same protocol was applied to phenyl acetylene, (E)-bis-phenylchalcogeno styrenes were obtained in good yields and high selectivity. The ionic liquid was reused up three times without lost of efficiency. (author)

  10. Predicted Thermoelectric Properties of the Layered XBi4S7 (X = Mn, Fe) Based Materials: First Principles Calculations

    Science.gov (United States)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya; Kanoun, Mohammed Benali

    2017-01-01

    We report a theoretical investigation of electronic structures, optical and thermoelectric properties of two ternary-layered chalcogenides, MnBi4S7 and FeBi4S7 , by combining the first principles density functional calculations and semi-local Boltzmann transport theory. The calculated electronic band structure have demonstrated that both compounds exhibit indirect band gaps. The optical transitions are explored via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity, and energy loss spectrum. These chalcogenides have exhibited interesting thermoelectric properties such as Seebeck's coefficient, electrical and thermal conductivity, and power factor as function of temperatures.

  11. Dielectric relaxation studies in Se90Cd8Sb2 glassy alloy

    Science.gov (United States)

    Shukla, Nitesh; Rao, Vandita; Dwivedi, D. K.

    2016-05-01

    Se90Cd8Sb2 chalcogenide semiconducting alloy was prepared by melt quench technique. The prepared glassy alloy has been characterized by techniques such as scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX).Dielectric properties of Se90Cd8Sb2 chalcogenide semiconductor have been studied using impedance spectroscopic technique in the frequency range 5×102Hz - 1×105Hz and in temperature range 303-318K. It is found that dielectric constant ɛ' and dielectric loss factor ɛ″ are dependent on frequency and temperature.

  12. Diorganyl dichalcogenides as useful synthons for colloidal semiconductor nanocrystals.

    Science.gov (United States)

    Brutchey, Richard L

    2015-11-17

    The ability to synthesize colloidal semiconductor nanocrystals in a well-controlled manner (i.e., with fine control over size, shape, size dispersion, and composition) has been mastered over the past 15 years. Much of this success stems from careful studies of precursor conversion and nanocrystal growth with respect to phosphine chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals. Despite the high level of success that has been achieved with phosphine chalcogenides, there has been a longstanding interest in exploring alternate chalcogenide precursors because of issues associated with phosphine chalcogenide cost, purity, toxicity, etc. This has resulted in a large body of literature on the use of sulfur and selenium dissolved in octadecene or amines, thio- and selenoureas, and silyl chalcogenides as alternate chalcogenide precursors for metal chalcogenide nanocrystal synthesis. In this Account, emerging work on the use of diorganyl dichalcogenides (R-E-E-R, where E = S, Se, or Te and R = alkyl, allyl, benzyl, or aryl) as alternate chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals is summarized. Among the benefits of these dichalcogenide synthons are the following: (i) they represent the first and only common precursor type that can function as chalcogen transfer reagents for each of the group VI elements (i.e., to make metal oxide, metal sulfide, metal selenide, and metal telluride nanocrystals); (ii) they possess relatively weak E-E bonds that can be readily cleaved under mild thermolytic or photolytic conditions; and (iii) the organic substituents can be tuned to affect the reactivity. These combined attributes have allowed dichalcogenide precursors to be employed for a wide range of metal chalcogenide nanocrystal syntheses, including those for In2S3, SnxGe1-xSe, SnTe, Cu2-xSySe1-y, ZnSe, CdS, CdSe, MoSe2, WSe2, BiSe, and CuFeS2. Interestingly, a number of metastable phases of compositionally complex

  13. Room temperature light emission from the low-dimensional semiconductors AZrPS{sub 6} ( A = K, Rb, Cs).

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, S.; Szarko, J. M.; Yuhas, B. D.; Malliakas, C. D.; Chen, L. X.; Kanatzidis, M. G. (Materials Science Division); (Northwestern Univ.)

    2010-03-29

    The new semiconducting thiophosphate compounds KZrPS{sub 6}, RbZrPS{sub 6}, and CsZrPS{sub 6} exhibit red light emission at room temperature. The materials have longer photoluminescence lifetimes than most of the inorganic chalcogenide semiconductors. They can be solution processed into thin films for potential device fabrication.

  14. Highly efficient carrier multiplication in PbS nanosheets

    NARCIS (Netherlands)

    Aerts, M.; Bielewicz, T.; Klinke, C.; Grozema, F.C.; Houtepen, A.J.; Schins, J.M.; Siebbeles, L.D.A.

    2014-01-01

    Semiconductor nanocrystals are promising for use in cheap and highly efficient solar cells. A high efficiency can be achieved by carrier multiplication (CM), which yields multiple electron-hole pairs for a single absorbed photon. Lead chalcogenide nanocrystals are of specific interest, since their b

  15. Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

    Directory of Open Access Journals (Sweden)

    J. Orava

    2015-07-01

    Full Text Available Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge40S60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent “memory” effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved “memorized” during writing and erasing cycles. The “memorized” pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

  16. Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

    Science.gov (United States)

    Orava, J.; Kozicki, M. N.; Yannopoulos, S. N.; Greer, A. L.

    2015-07-01

    Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge40S60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent "memory" effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved "memorized" during writing and erasing cycles. The "memorized" pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

  17. Synthesis and Characterization of Novel Quaternary Thioaluminogermanates

    KAUST Repository

    Al-Bloushi, Mohammed

    2013-05-01

    Metal chalcogenides form an important class of inorganic materials, which include several technologically important applications. The design of metal chlcogenides is of technological interest and has encouraged recent research into moderate temperature solid-state synthetic methods for the single crystal growth of new materials. The aim of this project is the investigation and development of synthetic methodology for the synthesis of novel metal chlcogenides. The new inorganic compounds of the type “M(AlS2)(GeS2)” (M = Na and K) are new metal-chalcogenides, synthesized by the classical solid state approach. The characterization of these compounds was carried out by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Single crystal and powder X-ray diffraction, solid state Nuclear Magnetic Resonance (NMR), Ultraviolet-visible (UV-VIS), Infrared (IR) and Raman spectroscopy. These theses study the synthesis of metal chalcogenides through the use of standard chemical techniques. The systematic studies demonstrate the effect of the reactants ratio and reaction temperature on the synthesis and growth of the single crystals. Metal chalcogenides have several potential applications in gas separation, ion exchange, environmental remediation, and energy storage. Especially, the ion exchange materials have found\\tpossible applications in waste-water treatment, water softening, metal separation, and production of high purity water.

  18. Reversible migration of silver on memorized pathways in Ag-Ge{sub 40}S{sub 60} films

    Energy Technology Data Exchange (ETDEWEB)

    Orava, J., E-mail: jo316@cam.ac.uk, E-mail: alg13@cam.ac.uk; Greer, A. L., E-mail: jo316@cam.ac.uk, E-mail: alg13@cam.ac.uk [Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kozicki, M. N. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Yannopoulos, S. N. [Foundation of Research and Technology Hellas - Institute of Chemical Engineering Sciences (FORTH/ICE-HT), Patras, P. O. Box 1414 (Greece)

    2015-07-15

    Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge{sub 40}S{sub 60} subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent “memory” effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved “memorized” during writing and erasing cycles. The “memorized” pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

  19. Defects in Calcite.

    Science.gov (United States)

    1991-05-13

    Interatomic Distances in Halides and Chalcogenides" Acta. Cryst. 32 (19-76) 751. 3 8 S.A. Marshall, J.A. McMillan, and R.A. Serway . "Electron Spin... Serway RA (1967) Electron Spin Resonance Absorption Spectrum of Y3 -Stabilized C0 3- Molecular-Ion in Single- Crystal Calcite. J. Chem. Phys. 48:5131-5137

  20. Size-dependent and tunable crystallization of GeSbTe phasechange nanoparticles

    NARCIS (Netherlands)

    Chen, Bin; ten Brink, Gerrit; Palasantzas, Georgios; Kooi, Bart

    2016-01-01

    Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in d