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Sample records for chalcogenides

  1. Applications of chalcogenide fiber

    OpenAIRE

    Hewak, D. W.; Khan, K.; Huang, C. C.

    2011-01-01

    Chalcogenide glass optical fibers have been extensively studied since 1967, when sulphide based fibers and their potential applications were first proposed. While high quality fiber drawn from alloys containing a variety of chalcogen elements have been realized, their delicate nature, complicated fabrication methodology and expense has restricted widespread application and commercial acceptance. In this paper we describe our current work on the fabrication and application of chalcogenide fibe...

  2. Chalcogenide Glass for Passive Infrared Applications

    Institute of Scientific and Technical Information of China (English)

    Jacques; Lucas

    2003-01-01

    Chalcogenide glass fibers have been successfully used for remote spectroscopy, temperature sensing and CO2 laser power delivery. In bulk form, chalcogenide glass is the most promising candidate for replacing the expensive germanium lenses for thermal imaging.

  3. Superconductivity in Fe-chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.C.; Chen, T.K. [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Lee, W.C. [Department of Physics, Applied Physics, and Astronomy, Binghamton University – SUNY (United States); Lin, P.H. [National Synchrotron Research Center, Hsinchu, Taiwan (China); Wang, M.J. [Institute of Astrophysics and Astronomy, Academia Sinica, Taipei, Taiwan (China); Wen, Y.C. [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Wu, P.M. [Deparment of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA (United States); Wu, M.K., E-mail: mkwu@mail.ndhu.edu.tw [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); National Donghwa University, Hualien, Taiwan (China)

    2015-07-15

    FeSe, which has the simplest crystal structure among the Fe based superconductors, and related chalcogenide superconductors are ideal candidates for investigating the detailed mechanism of the iron-based superconductors. Here, we summarize recent studies on the Fe-chalcogenides, with the goal to address some unresolved questions such as what is the influence of chemical stoichiometry on the phase diagram, what is the exact parent phase of FeSe system, and why can T{sub c}s be so dramatically enhanced in FeSe based superconductors? Recent developments in novel synthesis to prepare chalcogenide crystals, nano-materials and thin films allow the community to begin to address these issues. Then we review physical properties of the Fe chalcogenides, specifically focusing on optical properties, scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy (ARPES) results. These measurements along with recent theories provide a framework for better understanding the origin of superconductivity in FeSe and Fe-chalcogenides.

  4. Noble-Metal Chalcogenide Nanotubes

    Directory of Open Access Journals (Sweden)

    Nourdine Zibouche

    2014-10-01

    Full Text Available We explore the stability and the electronic properties of hypothetical noble-metal chalcogenide nanotubes PtS2, PtSe2, PdS2 and PdSe2 by means of density functional theory calculations. Our findings show that the strain energy decreases inverse quadratically with the tube diameter, as is typical for other nanotubes. Moreover, the strain energy is independent of the tube chirality and converges towards the same value for large diameters. The band-structure calculations show that all noble-metal chalcogenide nanotubes are indirect band gap semiconductors. The corresponding band gaps increase with the nanotube diameter rapidly approaching the respective pristine 2D monolayer limit.

  5. Nonlinear Integrated Optical Waveguides in Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    Yinlan; Ruan; Barry; Luther-Davies; Weitang; Li; Andrei; Rode; Marek; Samoc

    2003-01-01

    This paper reports on the study and measurement of the third order optical nonlinearity in bulk sulfide-based chalcogenide glasses; The fabrication process of the ultrafast laser deposited As-S-(Se)-based chalcogenide films and optical waveguides using two techniques: wet chemistry etching and plasma etching.

  6. Chalcogenide-tellurite composite microstructured optical fibre

    Science.gov (United States)

    Kohoutek, T.; Duan, Z.; Kawashima, H.; Yan, X.; Suzuki, T.; Matsumoto, M.; Misumi, Takashi; Ohishi, Y.

    2012-02-01

    We report on fabrication a composite microstructured optical fibre composed of highly nonlinear chalcogenide Ge-Ga- Sb-S glass core and tellurite TeO2-ZnO-Li20-Bi2O3 glass clad. We aimed at obtaining more flattened chromatic dispersion for pumping chalcogenide glass based optical fibre by a pulse laser at current telecommunication wavelengths, i.e. λ = 1.35 - 1.7 μm, which is difficult to achieve by using a single material chalcogenide fibers due to their high refractive index (n > 2.1). A fibre design exploiting a composite of two glasses and one ring of the air holes brings similar options for tuning the fibre dispersion such as use of complex multi rings of air-holes approach. A good choice of glasses, allows for fabricating a composite chalcogenide-tellurite optical fibre benefiting from high nonlinearity of chalcogenide core glass but exploiting a tellurite glass technology and fibre drawing. In the paper, we discuss some aspects of CMOF design concerning current chalcogenide and tellurite glass choice. Also, we show the supercontinuum spectra recorded from current chalcogenide-tellurite CMOF pumped with a custom made femtosecond fibre laser at λ = 1.55 μm with the pulse duration of 400 fs.

  7. Metastable states in amorphous chalcogenide semiconductors

    CERN Document Server

    Mikla, Victor I

    2009-01-01

    This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

  8. Metal chalcogenide nanostructures for renewable energy applications

    CERN Document Server

    Qurashi, Ahsanulhaq

    2014-01-01

    This first ever reference book that focuses on metal chalcogenide semiconductor nanostructures for renewable energy applications encapsulates the state-of-the-art in multidisciplinary research on the metal chalcogenide semiconductor nanostructures (nanocrystals, nanoparticles, nanorods, nanowires,  nanobelts, nanoflowers, nanoribbons and more).  The properties and synthesis of a class of nanomaterials is essential to renewable energy manufacturing and this book focuses on the synthesis of metal chalcogendie nanostructures, their growth mechanism, optical, electrical, and other important prop

  9. Characterization of chalcogenide phase change nanostructures

    OpenAIRE

    Fallica,

    2012-01-01

    This manuscript reports about the characterization of chalcogenide thin films and nanowires for non volatile memory application. In particular, the physical properties of several Te based alloys were analyzed in thin film by Hall effect and resistivity from room temperature to 4 K, and an interpretation on the scatterin mechanisms thereof is given. In addition, the functionality of 1-dimensional nanostructures of single crystal chalcogenide grown by metalorganic vapour deposition was demonstr...

  10. A highly reactive chalcogenide precursor for the synthesis of metal chalcogenide quantum dots

    Science.gov (United States)

    Jiang, Peng; Zhu, Dong-Liang; Zhu, Chun-Nan; Zhang, Zhi-Ling; Zhang, Guo-Jun; Pang, Dai-Wen

    2015-11-01

    Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. Here we report a novel phase transfer strategy to prepare phosphine-free chalcogenide precursors. The anions in aqueous solution were transferred to toluene via electrostatic interactions between the anions and didodecyldimethylammonium bromide (DDAB). The obtained chalcogenide precursors show high reactivity with metal ions in the organic phase and could be applied to the low-temperature synthesis of various metal chalcogenide NCs based on a simple reaction between metal ions (e.g. Ag+, Pb2+, Cd2+) and chalcogenide anions (e.g. S2-) in toluene. In addition to chalcogenide anions, other anions such as BH4- ions and AuCl4- ions can also be transferred to the organic phase for synthesizing noble metal NCs (such as Ag and Au NCs).Metal chalcogenide semiconductor nanocrystals (NCs) are ideal inorganic materials for solar cells and biomedical labeling. In consideration of the hazard and instability of alkylphosphines, the phosphine-free synthetic route has become one of the most important trends in synthesizing selenide QDs. Here we report a novel phase transfer strategy to prepare phosphine-free chalcogenide precursors. The anions in aqueous solution were transferred to toluene via electrostatic interactions between the anions and didodecyldimethylammonium bromide (DDAB). The obtained chalcogenide precursors show high reactivity with metal ions in the organic phase and could be applied to the low-temperature synthesis of various metal chalcogenide NCs based on a simple reaction between metal ions (e.g. Ag+, Pb2+, Cd2+) and chalcogenide anions (e.g. S2-) in toluene. In addition to chalcogenide anions, other anions such as BH4- ions and AuCl4- ions can also be transferred to

  11. Chalcogenides Metastability and Phase Change Phenomena

    CERN Document Server

    Kolobov, Alexander V

    2012-01-01

    A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.

  12. Photonic crystal fibers based on chalcogenide glasses

    Science.gov (United States)

    Adam, J. L.; Troles, J.; Brilland, L.; Coulombier, Q.; Chartier, T.

    2010-10-01

    Chalcogenide glasses are known for their large transparency in the mid-infrared and their high refractive index (>2). They present also a high non-linear coefficient (n2), 100 to 1000 times larger than for silica, depending on the composition. An original way to obtain single-mode fibers is to design microstructured optical fibers (MOFs). These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. A classical method to realize MOFs is the stack-and-draw technique. However, with chalcogenide glasses, that technique induces optical losses at the interfaces in the stack of capillaries. In consequence, we have developed a new casting method to fabricate the chalcogenide preform. This method permits to obtain optical losses around 1 dB/m at 1.55 μm and 0.3 dB/m in the mid-IR region. Various chalcogenide microstructured fibers working in the IR range were prepared in order to take advantage of the non-linear properties of these glasses and of the original MOF properties. For example, fibers with small effective mode area (Aeff supercontinuum sources. On the contrary, for military applications in the 3-5 and 8-12 μm windows, large effective mode area and single mode fibers have been designed to permit the propagation of high-power gaussian laser beams.

  13. Exploration of iron-chalcogenide superconductors

    Institute of Scientific and Technical Information of China (English)

    Dong Chi-Heng; Wang Hang-Dong; Fang Ming-Hu

    2013-01-01

    Iron-chalcogenide compounds with FeSe(Te,S) layers did not attract much attention until the discovery of high-Tc superconductivity (SC) in the iron-pnictide compounds at the begining of 2008.Compared with FeAs-based supercon-ductors,iron-chalcogenide superconductors have aroused enormous enthusiasm to study the relationship between SC and magnetisms with several distinct features,such as different antiferromagnetic ground states with relatively large moments in the parents,indicating possibly different superconducting mechanisms,the existence of the excess Fe atoms or Fe vacancies in the crystal lattice.Another reason is that the large single crystals are easily grown for the iron-chalcogenide compounds.This review will focus on our exploration for the iron-chalcogenide superconductors and discussion on several issues,including the crystal structure,magnetic properties,superconductivity,and phase separation.Some of them reach a consensus but some important questions still remain to be answered.

  14. DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON

    OpenAIRE

    Adler, D.

    1981-01-01

    Our comprehension of the physical properties of amorphous semiconductors has improved considerably over the past few years, but many puzzles remain. From our present perspective, the major features of chalcogenide glasses appear to be well understood, and some of the fine points which have arisen recently have been explained within the same general model. On the other hand, there are a grear number of unresolved mysteries with regard to amorphous silicon-based alloys. In this paper, the valen...

  15. Superconducting properties of iron chalcogenide thin films

    Directory of Open Access Journals (Sweden)

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  16. Chalcogenide Glass Optical Waveguides for Infrared Biosensing

    Science.gov (United States)

    Anne, Marie-Laure; Keirsse, Julie; Nazabal, Virginie; Hyodo, Koji; Inoue, Satoru; Boussard-Pledel, Catherine; Lhermite, Hervé; Charrier, Joël; Yanakata, Kiyoyuki; Loreal, Olivier; Le Person, Jenny; Colas, Florent; Compère, Chantal; Bureau, Bruno

    2009-01-01

    Due to the remarkable properties of chalcogenide (Chg) glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (bio)sensors. PMID:22423209

  17. The Surface Chemistry of Metal Chalcogenide Nanocrystals

    Science.gov (United States)

    Anderson, Nicholas Charles

    The surface chemistry of metal chalcogenide nanocrystals is explored through several interrelated analytical investigations. After a brief discussion of the nanocrystal history and applications, molecular orbital theory is used to describe the electronic properties of semiconductors, and how these materials behave on the nanoscale. Quantum confinement plays a major role in dictating the optical properties of metal chalcogenide nanocrystals, however surface states also have an equally significant contribution to the electronic properties of nanocrystals due to the high surface area to volume ratio of nanoscale semiconductors. Controlling surface chemistry is essential to functionalizing these materials for biological imaging and photovoltaic device applications. To better understand the surface chemistry of semiconducting nanocrystals, three competing surface chemistry models are presented: 1.) The TOPO model, 2.) the Non-stoichiometric model, and 3.) the Neutral Fragment model. Both the non-stoichiometric and neutral fragment models accurately describe the behavior of metal chalcogenide nanocrystals. These models rely on the covalent bond classification system, which divides ligands into three classes: 1.) X-type, 1-electron donating ligands that balance charge with excess metal at the nanocrystal surface, 2.) L-type, 2-electron donors that bind metal sites, and 3.) Z-type, 2-electron acceptors that bind chalcogenide sites. Each of these ligand classes is explored in detail to better understand the surface chemistry of metal chalcogenide nanocrystals. First, chloride-terminated, tri-n-butylphosphine (Bu 3P) bound CdSe nanocrystals were prepared by cleaving carboxylate ligands from CdSe nanocrystals with chlorotrimethylsilane in Bu3P solution. 1H and 31P{1H} nuclear magnetic resonance spectra of the isolated nanocrystals allowed assignment of distinct signals from several free and bound species, including surface-bound Bu3P and [Bu3P-H]+[Cl]- ligands as well as a Bu

  18. Synthesis and structures of metal chalcogenide precursors

    Science.gov (United States)

    Hepp, Aloysius F.; Duraj, Stan A.; Eckles, William E.; Andras, Maria T.

    1990-01-01

    The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

  19. Chemical Routes to Colloidal Chalcogenide Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Schaak, Raymond

    2015-02-19

    This project sought to develop new low-temperature synthetic pathways to intermetallic and chalcogenide nanostructures and powders, with an emphasis on systems that are relevant to advancing the synthesis, processing, and discovery of superconducting materials. The primary synthetic routes involved solution chemistry methods, and several fundamental synthetic challenges that underpinned the formation of these materials were identified and investigated. Methods for incorporating early transition metals and post transition metals into nanoscale and bulk crystals using low-temperature solution chemistry methods were developed and studied, leading to colloidal nanocrystals of elemental indium, manganese, and germanium, as well as nanocrystalline and bulk intermetallic compounds containing germanium, gallium, tin, indium, zinc, bismuth, and lithium. New chemical tools were developed to help target desired phases in complex binary intermetallic and metal chalcogenide systems that contain multiple stable phases, including direct synthesis methods and chemical routes that permit post-synthetic modification. Several phases that are metastable in bulk systems were targeted, synthesized, and characterized as nanocrystalline solids and bulk powders, including the L12-type intermetallic compounds Au3Fe, Au3Ni, and Au3Co, as well as wurtzite-type MnSe. Methods for accessing crystalline metal borides and carbides using direct solution chemistry methods were also developed, with an emphasis on Ni3B and Ni3C, which revealed useful correlations of composition and magnetic properties. Methods for scale-up and nanoparticle purification were explored, providing access to centimeter-scale pressed pellets of polyol-synthesized nanopowders and a bacteriophage-mediated method for separating impure nanoparticle mixtures into their components. Several advances were made in the synthesis of iron selenide and related superconducting materials, including the production of colloidal Fe

  20. Chalcogenide thin film materials for next generation data storage

    OpenAIRE

    Simpson, Robert E.

    2008-01-01

    Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. Commonly Ge. Therefore Ga:La:S:Cu shows potential as a future electrical phase change data storage material.

  1. Debye temperatures of uranium chalcogenides from their lattice dynamics

    Indian Academy of Sciences (India)

    S Durai; P Babu

    2005-12-01

    Phonon dispersion relations in uranium chalcogenides have been investigated using a modified three-body force shell model. From the phonon frequencies, their Debye temperatures are evaluated. Further, on the basis of the spin fluctuation in the heavy fermion uranium compounds, UPt3 and UBe13, the possible superconducting transition temperatures of chalcogenides are theoretically predicted. The c values are in the same range as of those in UPt3 and UBe13.

  2. On the application of chalcogenide glasses in temperature sensors

    OpenAIRE

    Shpotyuk, M.; Chalyy, D.; Shpotyuk, O.; Iovu, M.; Andriesh, A.; Vakiv, M.; Ubizskii, S.

    2012-01-01

    In this paper we report about a possibility of application of chalcogenide glasses as active media in optoelectronic temperature sensors. All investigations were performed on a sample of Ge18As18Se64 chalcogenide glass as typical covalent network glass with rigid structure. Temperature dependence of optical transmission in the fundamental optical absorption edge region was studied through the glass transition interval. A monotone increasing temperature dependence of position of the f...

  3. Radiation-induced defect formation in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I.; Filipecki, J. [Physics Institute of Pedagogical University of Czestochowa, Al. Armii Krajowej 13/15, Czestochowa 42201 (Poland); Kozdras, A. [Physics Laboratory of Opole Technical University, 75 ul. Ozimska, Opole, PL-45370 (Poland); Kavetskyy, T.S. [Lviv Scientific Research Institute of Materials of Scientific Research Company ' Carat' , Stryjska Str. 202, Lviv, UA-79031 (Ukraine)

    2003-10-01

    The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As{sub 2}S{sub 3}-GeS{sub 2} and non-stoichiometric As{sub 2}S{sub 3}-Ge{sub 2}S{sub 3} chalcogenide glasses before and after {gamma}-irradiation.

  4. Multimode supercontinuum generation in chalcogenide glass fibres

    DEFF Research Database (Denmark)

    Kubat, Irnis; Bang, Ole

    2016-01-01

    Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single...... polarisation in the fundamental mode is considered the obtainable supercontinuum bandwidth is substantially exaggerated compared to when both polarisations are taken into account. Our modeling shows that if the pump pulse is short enough (≤ 10ps) then higher order modes are not important because of temporal...... walk-off. In contrast long pump pulses (≥ 40ps) will efficiently excite higher order modes through Raman scattering, which will deplete the fundamental mode of energy and limit the possibility of obtaining a broadband supercontinuum....

  5. Multimode supercontinuum generation in chalcogenide glass fibres.

    Science.gov (United States)

    Kubat, Irnis; Bang, Ole

    2016-02-01

    Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single polarisation in the fundamental mode is considered the obtainable supercontinuum bandwidth is substantially exaggerated compared to when both polarisations are taken into account. Our modeling shows that if the pump pulse is short enough (≤ 10 ps) then higher order modes are not important because of temporal walk-off. In contrast long pump pulses (≥ 40 ps) will efficiently excite higher order modes through Raman scattering, which will deplete the fundamental mode of energy and limit the possibility of obtaining a broadband supercontinuum. PMID:26906826

  6. Chalcogenide photovoltaic solar cells of special interest

    Energy Technology Data Exchange (ETDEWEB)

    Champness, C.H. (McGill Univ., Montreal, Quebec (Canada))

    1988-08-01

    A brief review is given of those semiconducting selenides and tellurides that appear suitable for the absorber layer of a photovoltaic solar cell, with energy gaps in the range 1 to 2 eV. Furthermore, to obtain a lower cost cell, the semiconductor is also required to be used in the form of a thin polycrystalline film, necessitating a high optical absorption coefficient in the material. At the present time the two best chalcogenides meeting these requirements are the compounds CuInSe{sub 2} and CdTe, both of which have been used in polycrystalline thin film structures with CdS, as the window layer, yielding conversion efficiencies of over 10%. They have also demonstrated very good chemical stability.

  7. Chalcogenide glass hollow core photonic crystal fibers

    Science.gov (United States)

    Désévédavy, Frédéric; Renversez, Gilles; Troles, Johann; Houizot, Patrick; Brilland, Laurent; Vasilief, Ion; Coulombier, Quentin; Traynor, Nicholas; Smektala, Frédéric; Adam, Jean-Luc

    2010-09-01

    We report the first hollow core photonic crystal fibers (HC PCF) in chalcogenide glass. To design the required HC PCF profiles for such high index glass, we use both band diagram analysis to define the required photonic bandgap and numerical simulations of finite size HC PCFs to compute the guiding losses. The material losses have also been taken into account to compute the overall losses of the HC PCF profiles. These fibers were fabricated by the stack and draw technique from TeAsSe (TAS) glass. The fibers we drew in this work are composed of six rings of holes and regular microstructures. Two profiles are presented, one is known as a kagome lattice and the other one corresponds to a triangular lattice. Geometrical parameters are compared to the expected parameters obtained by computation. Applications of such fibers include power delivery or fiber sensors among others.

  8. Calculation of small arsenic and antimony chalcogenide clusters with an application to vitreous chalcogenide structure

    OpenAIRE

    Gurin, V.; Shpotyuk, O.; Boyko, V

    2015-01-01

    Small clusters of the As/Sb-S/Se system that is of importance for simulation of elementary structure units of chalcogenide glasses are calculated using DFT technique. Different structures of As2Xn- and Sb2Xn- (X=S,Se) with proper hydrogen termination are compared by the total electronic energy values. The most stable As-X structures are of corner-sharing (CS) type (i.e. the elementary AsX3-pyramids linked via one X atom, and in the case of Sb-X family a new asymmetrical Sb2Se3 cluster appears...

  9. Thermal dissociation of copper chalcogenides during melting

    Science.gov (United States)

    Pavlova, L. M.; Glazov, V. M.; Asryan, A. A.

    1998-01-01

    An attempt was undertaken to describe the mechanism of dissociation of copper chalcogenides during melting. Two-stage schemes of the dissociation of the Cu2BVI compounds (BVI is S, Se, or Te) were proposed. It was suggested that in the copper-sulfur and copper-selenium melts, Cu2BVI and CuBVI associates exist, whereas in the copper tellurium systems, Cu2Te and Cu5Te3 associates exist. The interpretation of available data on magnetic susceptibility was given in terms of suggested associates in Cu-Te alloys. Nous avons essayé de décrire le mécanisme de dissociation des chalcogénures de cuivre pendant la fusion. Nous proposons des schémas à deux étapes de dissociation pour les composés Cu2BVI (BVI est S, Se, ou Te). Nous suggérons l'existence dans le bain fondu cuivre-soufre et cuivre-sélénium des associés du type Cu2BVI et CuBVI et dans le système cuivre-tellure Cu2Te et Cu5Te3. L'interprétation des données disponibles de susceptibilité magnétique est réalisée en termes de formation d'associés dans les alliages Cu-Te.

  10. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

    Directory of Open Access Journals (Sweden)

    Priyanka Jood

    2015-03-01

    Full Text Available Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

  11. Optical Nonlinearities in Chalcogenide Glasses and their Applications

    CERN Document Server

    Zakery, A

    2007-01-01

    Photonics, which uses photons for information and image processing, has been labeled the technology of the 21st century, for which non-linear optical processes provide the key functions of frequency conversion and optical switching. Chalcogenide glass fiber is one of the most promising candidates for use as a non-linear optical medium because of its high optical nonlinearity and long interaction length. Since the chalcogenide glass fibers transmit into the IR, there are numerous potential applications in the civil, medical and military areas. One of the most exciting developments in the future is going to be in the area of rare-earth ion doping of chalcogenide fibers for IR fluorescence emission. The IR light sources, lasers and amplifiers developed using this phenomena will be very useful in civil, medical and military applications. Remote IR spectroscopy and imaging using flexible fibers will be realized for applications. Other future research areas which will inevitably be explored includes non-linear opti...

  12. Effect of pressure on the phonon properties of europium chalcogenides

    Indian Academy of Sciences (India)

    U K Sakalle; P K Jha; S P Sanyal

    2000-06-01

    Lattice vibrational properties of europium chalcogenides have been investigated at high pressure by using a simple lattice dynamical model theory viz. the three-body force rigid ion model (TRIM) which includes long range three-body interaction arising due to charge transfer effects. The dispersion curves for the four Eu-chalcogenides agree reasonably well with the available experimental data. Variation of LO, TO, LA and TA phonons with pressure have also been studied at the symmetry points of the brillouin zone (BZ) for Euchalcogenides for the first time by using a lattice dynamical model theory. We have also calculated the one phonon density of states and compared them with the first order Raman scattering results. The calculation of one phonon density of states for Eu-chalcogenides has also been extended up to the phase transition pressure. We observed a pronounced shift in phonon spectrum as pressure is increased.

  13. Mid infrared supercontinuum generation from chalcogenide glass waveguides and fibers

    DEFF Research Database (Denmark)

    Luther-Davies, Barry; Yu, Yi; Zhang, Bin;

    2015-01-01

    I report work on mid-infrared super-continuum generation in chalcogenide fibers and waveguides pumped by 320fsec pulses at 21MHz in the 3-4.6µm range. Average powers of ≈20mW were produced with spectral coverage from <2µm to >11µm.......I report work on mid-infrared super-continuum generation in chalcogenide fibers and waveguides pumped by 320fsec pulses at 21MHz in the 3-4.6µm range. Average powers of ≈20mW were produced with spectral coverage from <2µm to >11µm....

  14. Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

    DEFF Research Database (Denmark)

    Markos, Christos; Kubat, Irnis; Bang, Ole

    2014-01-01

    The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass...... makes the polymer PCF nonlinear and provides a possibility to shift the transmission band edges as much as 17 nm by changing the intensity. The proposed fabrication technique constitutes a new highway towards all-fiber nonlinear tunable devices based on polymer PCFs, which at the moment is not possible...

  15. High surface area graphene-supported metal chalcogenide assembly

    Energy Technology Data Exchange (ETDEWEB)

    Worsley, Marcus A.; Kuntz, Joshua; Orme, Christine A.

    2016-04-19

    A composition comprising at least one graphene-supported assembly, which comprises a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds, and at least one metal chalcogenide compound disposed on said graphene sheets, wherein the chalcogen of said metal chalcogenide compound is selected from S, Se and Te. Also disclosed are methods for making and using the graphene-supported assembly, including graphene-supported MoS.sub.2. Monoliths with high surface area and conductivity can be achieved. Lower operating temperatures in some applications can be achieved. Pore size and volume can be tuned.

  16. Recent Advances in Layered Metal Chalcogenides as Superconductors and Thermoelectric Materials: Fe-Based and Bi-Based Chalcogenides.

    Science.gov (United States)

    Mizuguchi, Yoshikazu

    2016-04-01

    Recent advances in layered (Fe-based and Bi-based) chalcogenides as superconductors or functional materials are reviewed. The Fe-chalcogenide (FeCh) family are the simplest Fe-based high-Tc superconductors. The superconductivity in the FeCh family is sensitive to external or chemical pressure, and high Tc is attained when the local structure (anion height) is optimized. The Bi-chalcogenide (BiCh2 ) family are a new group of layered superconductors with a wide variety of stacking structures. Their physical properties are also sensitive to external or chemical pressure. Recently, we revealed that the emergence of superconductivity and the Tc in this family correlate with the in-plane chemical pressure. Since the flexibility of crystal structure and electronic states are an advantage of the BiCh2 family for designing functionalities, I briefly review recent developments in this family as not only superconductors but also other functional materials. PMID:26821763

  17. On the instability effects in radiation-sensitive chalcogenide glasses

    International Nuclear Information System (INIS)

    The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy γ-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters

  18. Electrical properties of Bi-implanted amorphous chalcogenide films

    International Nuclear Information System (INIS)

    The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1 × 1015 cm−2 is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2 × 1016 cm−2. These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge-limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures. - Highlights: • Electron conductivity is observed in Bi-implanted GeTe films. • Higher conductivity in Bi-implanted films stems from increased density of electrically active defects. • Bi implanted in amorphous chalcogenides may promote formation of a more chemically ordered alloy

  19. Electrical properties of Bi-implanted amorphous chalcogenide films

    Energy Technology Data Exchange (ETDEWEB)

    Fedorenko, Yanina G.

    2015-08-31

    The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1 × 10{sup 15} cm{sup −2} is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2 × 10{sup 16} cm{sup −2}. These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge-limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures. - Highlights: • Electron conductivity is observed in Bi-implanted GeTe films. • Higher conductivity in Bi-implanted films stems from increased density of electrically active defects. • Bi implanted in amorphous chalcogenides may promote formation of a more chemically ordered alloy.

  20. Tailoring chromatic dispersion in chalcogenide-tellurite microstructured optical fiber

    Science.gov (United States)

    Kohoutek, Tomas; Duan, Zhongchao; Kawashima, Hiroyasu; Cheng, Tonglei; Suzuki, Takenobu; Matsumoto, Morio; Misumi, Takashi; Ohishi, Yasutake

    2014-08-01

    We report fabrication of a highly nonlinear hybrid microstructured optical fiber composed of chalcogenide glass core and tellurite glass cladding. The flattened chromatic dispersion can be achieved in such an optical fiber with near zero dispersion wavelength at telecommunication wavelengths λ = 1.35-1.7 μm, which cannot be achieved in chalcogenide glass optical fibers due to their high refractive index, i.e. n > 2.1. We demonstrate a hybrid 4-air hole chalcogenide-tellurite optical fiber (Δn = 0.25) with flattened chromatic dispersion around λ = 1.55 μm. In optimized 12-air hole optical fiber composed of the same glasses, the chromatic dispersion values were achieved between -20 and 32 ps/nm/km in a broad wavelength range of 1.5-3.8 μm providing the fiber with extremely high nonlinear coefficient 86,000 km-1W-1. Hybrid chalcogenide/tellurite fibers pumped with the near infrared lasers give good promise for broadband optical amplification, wavelength conversion, and supercontinuum generation in the near- to mid-infrared region.

  1. On the instability effects in radiation-sensitive chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, V. [Lviv State University for Vital Activity Safety, 35 Kleparivska str., Lviv, UA-79007 (Ukraine); Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Kovalskiy, A. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)], E-mail: shpotyuk@novas.lviv.ua; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)

    2007-04-15

    The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy {gamma}-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters.

  2. Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    McMillen Ben

    2013-11-01

    Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

  3. Magnetic excitations in iron chalcogenide superconductors

    Directory of Open Access Journals (Sweden)

    Hisashi Kotegawa

    2012-01-01

    Full Text Available Nuclear magnetic resonance and neutron scattering experiments in iron chalcogenide superconductors are reviewed to make a survey of the magnetic excitations in FeSe, FeSe1−xTex and alkali-metal-doped AxFe2−ySe2 (A = K, Rb, Cs, etc. In FeSe, the intimate relationship between the spin fluctuations and superconductivity can be seen universally for the variations in the off-stoichiometry, the Co-substitution and applied pressure. The isovalent compound FeTe has a magnetic ordering with different wave vector from that of other Fe-based magnetic materials. The transition temperature Tc of FeSe increases with Te substitution in FeSe1−xTex with small x, and decreases in the vicinity of the end member FeTe. The spin fluctuations are drastically modified by the Te substitution. In the vicinity of the end member FeTe, the low-energy part of the spin fluctuation is dominated by the wave vector of the ordered phase of FeTe; however, the reduction of Tc shows that it does not support superconductivity. The presence of same wave vector as that of other Fe-based superconductors in FeSe1−xTex and the observation of the resonance mode demonstrate that FeSe1−xTex belongs to the same group as most of other Fe-based superconductors in the entire range of x, where superconductivity is mediated by the spin fluctuations whose wave vector is the same as the nesting vector between the hole pockets and the electron pockets. On the other hand, the spin fluctuations differ for alkali-metal-doped AxFe2−ySe2 and FeSe or other Fe-based superconductors in their wave vector and strength in the low-energy part, most likely because of the different Fermi surfaces. The resonance mode with different wave vector suggests that AxFe2−ySe2 has an exceptional superconducting symmetry among Fe-based superconductors.

  4. Iron based superconductors: Pnictides versus chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Sadovskii, M.V., E-mail: sadovski@iep.uran.ru [Institute for Electrophysics, Russian Academy of Sciences, Ural Branch, Amundsen str. 106, Ekaterinburg 620016 (Russian Federation); Institute for Metal Physics, Russian Academy of Sciences, Ural Branch, S. Kovalevskaya str. 18, Ekaterinburg 620990 (Russian Federation); Kuchinskii, E.Z.; Nekrasov, I.A. [Institute for Electrophysics, Russian Academy of Sciences, Ural Branch, Amundsen str. 106, Ekaterinburg 620016 (Russian Federation)

    2012-10-15

    We present a brief review of the present day situation with studies of high-temperature superconductivity in iron pnictides and chalcogenides. Recent discovery of superconductivity with T{sub c}>30K in A{sub x}Fe{sub 2-x/2}Se{sub 2} (A=K, Cs, Tl, etc) represents the major new step in the development of new concepts in the physics of Fe-based high-temperature superconductors. We compare LDA and ARPES data on the band structure and Fermi surfaces of novel superconductors and those of the previously studied FeAs superconductors, especially isostructural 122-superconductors like BaFe{sub 2}As{sub 2}. It appears that electronic structure of new superconductors is rather different from that of FeAs 122-systems. In particular, no nesting properties of electron and hole-like Fermi surfaces is observed, casting doubts on most popular theoretical schemes of Cooper pairing for these systems. Doping of novel materials is extremely important as a number of topological transitions of Fermi surface near the {Gamma} point in the Brillouin zone are observed for different doping levels. The discovery of Fe vacancies ordering and antiferromagnetic (AFM) ordering at pretty high temperatures (T{sub N}>500K), much exceeding superconducting T{sub c} makes these systems unique antiferromagnetic superconductors with highest T{sub N} observed up to now. This poses very difficult problems for theoretical understanding of superconductivity. We discuss the role of both vacancies and AFM ordering in transformations of band structure and Fermi surfaces, as well as their importance for superconductivity. In particular, we show that system remains metallic with unfolded Fermi surfaces quite similar to that in paramagnetic state. Superconducting transition temperature T{sub c} of new superconductors is discussed within the general picture of superconductivity in multiple band systems. It is demonstrated that both in FeAs-superconductors and in new FeSe-systems the value of T{sub c} correlates with

  5. The new materials on base of the pnictides and the chalcogenides of the rare earth elements

    International Nuclear Information System (INIS)

    Full text: Rare earth pnictides, chalcogenides and their solid solutions are prospective materials in which strong magnetooptic, electrooptic and other effects. This presentation will cover the development of new techniques and process investigation for crystal growth of RE pnictides, chalcogenides and their solid solutions. Diagrams of pnictides, chalcogenides and their solid solution have been constructed and the atomic and electronic structure was studied by electron spectroscopy of clean cleaved surfaces

  6. Error-free 640 Gbit/s demultiplexing using a chalcogenide planar waveguide chip

    DEFF Research Database (Denmark)

    Xu, Jing; Galili, Michael; Mulvad, Hans Christian Hansen;

    2008-01-01

    We demonstrate error free, low-penalty demultiplexing of a 640 Gbit/s OTDM signal to 10 Gbit/s using a 5cm long chalcogenide planar waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide.......We demonstrate error free, low-penalty demultiplexing of a 640 Gbit/s OTDM signal to 10 Gbit/s using a 5cm long chalcogenide planar waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide....

  7. Preparation of chalcogenide glass fiber using an improved extrusion method

    Science.gov (United States)

    Jiang, Chen; Wang, Xunsi; Zhu, Minming; Xu, Huijuan; Nie, Qiuhua; Dai, Shixun; Tao, Guangming; Shen, Xiang; Cheng, Ci; Zhu, Qingde; Liao, Fangxing; Zhang, Peiquan; Zhang, Peiqing; Liu, Zijun; Zhang, Xianghua

    2016-05-01

    We developed the extrusion method to prepare arsenic-free chalcogenide glass fibers with glass cladding. By using the double nested extrusion molds and the corresponding isolated stacked extrusion method, the utilization rate of glass materials was greatly improved compared with the conventional extrusion method. Fiber preforms with optimal stability of core/cladding ratio throughout the 160 mm length were prepared using the developed extrusion method. Typical fiber structure defects between the core/cladding interface, such as bubbles, cracks, and core diameter variation, were effectively eliminated. Ge-Sb-Se/S chalcogenide glasses were used to form a core/cladding pair and fibers with core/cladding structure were prepared by thermally drawing the extruded preforms. The transmission loss, fiber bending loss, and other optical characters of the fibers were also investigated.

  8. Synthesis of cadmium chalcogenide nanotubes at room temperature

    KAUST Repository

    Pan, Jun

    2012-10-01

    Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

  9. Electronic structure of ruthenium-doped iron chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Winiarski, M. J., E-mail: M.Winiarski@int.pan.wroc.pl; Samsel-Czekała, M. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, 50-422 Wrocław (Poland); Ciechan, A. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland)

    2014-12-14

    The structural and electronic properties of hypothetical Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems are good candidates for new superconducting iron-based materials.

  10. Electronic structure of ruthenium-doped iron chalcogenides

    OpenAIRE

    M. J. Winiarski; Samsel-Czekała, M.; Ciechan, A.

    2014-01-01

    The structural and electronic properties of hypothetical Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of ...

  11. Theoretical prediction of topological insulator in ternary rare earth chalcogenides

    OpenAIRE

    Yan, Binghai; Zhang, Hai-Jun; Liu, Chao-Xing; Qi, Xiao-Liang; Frauenheim, Thomas; Zhang, Shou-Cheng

    2010-01-01

    A new class of three-dimensional topological insulator, ternary rare earth chalcogenides, is theoretically investigated with ab initio calculations. Based on both bulk band structure analysis and the direct calculation of topological surface states, we demonstrate that LaBiTe3 is a topological insulator. La can be substituted by other rare earth elements, which provide candidates for novel topological states such as quantum anomalous Hall insulator, axionic insulator and topological Kondo ins...

  12. Assessment of Lead Chalcogenide Nanostructures as Possible Thermoelectric Materials

    OpenAIRE

    Gabriel, Stefanie

    2013-01-01

    The assembly of nanostructures into “multi”-dimensional materials is one of the main topics occurring in nanoscience today. It is now possible to produce high quality nanostructures reproducibly but for their further application larger structures that are easier to handle are required. Nevertheless during their assembly their nanometer size and accompanying properties must be maintained. This challenge was addressed in this work. Lead chalcogenides have been chosen as an example system becaus...

  13. Linear and nonlinear optical properties of chalcogenide microstructured optical fibers

    Science.gov (United States)

    Trolès, Johann; Brilland, Laurent; Caillaud, Celine; Renversez, Gilles; Mechin, David; Adam, Jean-Luc

    2015-03-01

    Chalcogenide glasses are known for their large transparency in the mid-infrared and their high linear refractive index (>2). They present also a high non-linear coefficient (n2), 100 to 1000 times larger than for silica, depending on the composition. we have developed a casting method to prepare the microstructured chalcogenide preform. This method allows optical losses as low as 0.4 dB/m at 1.55 µm and less than 0.05 dB/m in the mid IR. Various chalcogenide MOFs operating in the IR range has been fabricated in order to associate the high non-linear properties of these glasses and the original MOF properties. For example, small core fibers have been drawn to enhance the non linearities for telecom applications such as signal regeneration and generation of supercontinuum sources. On another hand, in the 3-12 µm window, single mode fibers and exposed core fibers have been realized for Gaussian beams propagation and sensors applications respectively.

  14. Synthesis, characterization, and structure of reduced tungsten chalcogenide cluster complexes

    Energy Technology Data Exchange (ETDEWEB)

    Xiaobing, Xie

    1997-02-01

    Over the previous twenty years, ternary molybdenum chalcogenides of the general formula M{sub x}Mo{sub 6}Y{sub 8} (M = ternary metal cation; Y = chalcogenide), known as Chevrel phases, have been extensively studied. Many of these compounds have been found to have superconductivity, catalytic activity and ionic conductivity. The rich chemistry of the Chevrel phases raises considerable interest in finding the tungsten analogues of these phases. However, no such analogue has ever been synthesized, although the Chevrel phases are usually prepared directly from elements at high temperatures above 1000{degrees}C. The absence of the tungsten analogues may be caused by their thermodynamic instability at such high temperatures. Thus it might be necessary to avoid high-temperature synthetic procedures in order to establish the ternary and binary tungsten chalcogenides. A major focus of the McCarley research group has been on the preparation of M{sub 6}Y{sub 8}L{sub 6} (M = Mo, W; Y = S, Se, Te) cluster complexes as low temperature pathways to the Chevrel phases.

  15. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  16. Characterization of pulsed laser deposited chalcogenide thin layers

    International Nuclear Information System (INIS)

    In this work we report on pulsed laser deposition (PLD) of chalcogenide thin films from the systems (AsSe)100-xAgIx and (AsSe)100-xAgx for sensing applications. A KrF* excimer laser (λ = 248 nm; τFWHM = 25 ns) was used to ablate the targets that had been prepared from the synthesised chalcogenide materials. The films were deposited in either vacuum (4 x 10-4 Pa) or argon (5 Pa) on silicon and glass substrates kept at room temperature. The basic properties of the films, including their morphology, topography, structure, and composition were characterised by complementary techniques. Investigations by X-ray diffraction (XRD) confirmed the amorphous nature of the films, as no strong diffraction reflections were found. The film composition was studied by energy dispersive X-ray (EDX) spectroscopy. The morphology of the films investigated by scanning electron microscopy (SEM), revealed a particulate-covered homogeneous surface, typical of PLD. Topographical analyses by atomic force microscopy (AFM) showed that the particulate size was slightly larger in Ar than in vacuum. The uniform surface areas were rather smooth, with root mean square (rms) roughness increasing up to several nanometers with the AgI or Ag doping. Based upon the results from the comprehensive investigation of the basic properties of the chalcogenide films prepared by PLD and their dependence on the process parameters, samples with appropriate sorption properties can be selected for possible applications in cantilever gas sensors

  17. Chalcogenide material strengthening through the lens molding process

    Science.gov (United States)

    Nelson, J.; Scordato, M.; Lucas, Pierre; Coleman, Garrett J.

    2016-05-01

    The demand for infrared transmitting materials has grown steadily for several decades as markets realize new applications for longer wavelength sensing and imaging. With this growth has come the demand for new and challenging material requirements that cannot be satisfied with crystalline products alone. Chalcogenide materials, with their unique physical, thermal, and optical properties, have found acceptance by designers and fabricators to meet these demands. No material is perfect in every regard, and chalcogenides are no exception. A cause for concern has been the relatively low fracture toughness and the propensity of the bulk material to fracture. This condition is amplified when traditional subtractive manufacturing processes are employed. This form of processing leaves behind micro fractures and sub surface damage, which act as propagation points for both local and catastrophic failure of the material. Precision lens molding is not a subtractive process, and as a result, micro fractures and sub surface damage are not created. This results in a stronger component than one produced by traditional methods. New processing methods have also been identified that result in an even stronger surface that is more resistant to breakage, without the need for post processing techniques that may compromise surface integrity. This paper will discuss results achieved in the process of lens molding development at Edmund Optics that result in measurably stronger chalcogenide components. Various metrics will be examined and data will be presented that quantifies component strength for different manufacturing processes.

  18. Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing

    DEFF Research Database (Denmark)

    Galili, Michael; Xu, Jing; Mulvad, Hans Christian Hansen;

    2009-01-01

    We report the first demonstration of error-free 640 Gbit/s demultiplexing using the Kerr non-linearity of an only 5 cm long chalcogenide glass waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide. Excellent performance is achieved with only...

  19. Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

    NARCIS (Netherlands)

    Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

    2011-01-01

    Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

  20. New electronic phase diagram of iron-chalcogenide superconductor. Suppression of phase separation using film fabrication

    International Nuclear Information System (INIS)

    We have demonstrated a giant enhancement of superconducting critical temperature in iron chalcogenide and new electronic phase diagram of this system. These remarkable results were achieved by fabricating an iron chalcogenide film with a composition that was difficult to obtain in bulk crystals because of spinodal decomposition. (author)

  1. Polyol-mediated Synthesis of Chalcogenide Nanoparticles for Thin-film Solar Cells

    OpenAIRE

    Dong, Hailong

    2014-01-01

    The aim of this work was polyol-mediated syntheses of chalcogenide nanoparticles for printable thin-film solar cells. In this thesis, chalcogenide nanoparticles, such as Cu2Se, In2Se3, CZTS, Se@CuSe and Te@Bi2Te3, have been successfully synthesized via a polyol-mediated method.

  2. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    Science.gov (United States)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  3. Chemical synthesis and modification of target phases of chalcogenide nanomaterials

    Science.gov (United States)

    Sines, Ian T.

    Inorganic nanoparticles have been at the forefront of materials research in recent years due to their utility in modern technological processes. Chalcogenide nanomaterials are of particular interest because of their wide range of desirable properties for semiconductors, magnetic devices, and energy industries. Primary factors that dictate the properties of the material are the elemental composition, crystal structure, stoichiometry, crystallite size, and particle morphology. One of the most common approaches to synthesize these materials is through solution mediated routes. This approach offers unique advantages in controlling the morphology and particle size that other methods lack. This dissertation describes our recent work on exploiting solution chemical routes to control the crystal structure and composition of chalcogenide nanomaterials. We will start by discussing solution chemistry routes to synthesize non-equilibrium phases of chaclogenide nanomaterials. By using low-temperature bottom-up techniques it is possible to trap kinetically stable phases that cannot be accessed using traditional high-temperature techniques. We used solution chemistry to synthesize and characterize, for the first time, wurtzite-type MnSe. Wurtzite-type MnSe is the end-member of the highly investigated ZnxMn1-xSe solid solution, a classic magnetic semiconductor system. We will then discuss PbO-type FeS, another non-equilibrium phase that is isostructural with the superconducting phase of FeSe. We synthesized phase-pure PbO-type FeS using a low-temperature solvothermal route. We will then discuss the post-synthetic modification of chalcogenides nanomaterials. By exploiting the solubility of Se and S in tri-n-octylphosphine we can selectively extract the chalcogen from preformed chalcogenide nanomaterials. This gives chemists a technique for purification and phase-targeting of particular chalcogenide phases. This method can be modified to facilitate anion exchange. When Te is

  4. The intercalation chemistry of layered iron chalcogenide superconductors

    Science.gov (United States)

    Vivanco, Hector K.; Rodriguez, Efrain E.

    2016-10-01

    The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials-mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

  5. Exposed-core chalcogenide microstructured optical fibers for chemical sensing

    Science.gov (United States)

    Troles, Johann; Toupin, Perrine; Brilland, Laurent; Boussard-Plédel, Catherine; Bureau, Bruno; Cui, Shuo; Mechin, David; Adam, Jean-Luc

    2013-05-01

    Chemical bonds of most of the molecules vibrate at a frequency corresponding to the near or mid infrared field. It is thus of a great interest to develop sensitive and portable devices for the detection of specific chemicals and biomolecules for various applications in health, the environment, national security and so on. Optical fibers define practical sensing tools. Chalcogenide glasses are known for their transparency in the infrared optical range and their ability to be drawn as fibers. They are consequently good candidates to be used in biological/chemical sensing. For that matter, in the past decade, chalcogenide glass fibers have been successfully implemented in evanescent wave spectroscopy experiments, for the detection of bio-chemical species in various fields of applications including microbiology and medicine, water pollution and CO2 detection. Different types of fiber can be used: single index fibers or microstructured fibers. Besides, in recent years a new configuration of microstructured fibers has been developed: microstructured exposed-core fibers. This design consists of an optical fiber with a suspended micron-scale core that is partially exposed to the external environment. This configuration has been chosen to elaborate, using the molding method, a chalcogenide fiber for chemical species detection. The sensitivity of this fiber to detect molecules such as propan-2-ol and acetone has been compared with those of single index fibers. Although evanescent wave absorption is inversely proportional to the fiber diameter, the result shows that an exposed-core fiber is much more sensitive than a single index fiber having a twice smaller external diameter.

  6. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    International Nuclear Information System (INIS)

    Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models

  7. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Scientific Research Company “Carat” (Ukraine); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Shpotyuk, M. [Scientific Research Company “Carat” (Ukraine); Ingram, A. [Opole Technical University (Poland); Szatanik, R. [Opole University (Poland)

    2015-03-15

    Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

  8. Reversibility windows in selenide-based chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Hyla, M. [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Boyko, V. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Lviv National Polytechnic University, 12, Bandera Street, Lviv, UA 79013 (Ukraine); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine)], E-mail: golovchak@novas.lviv.ua

    2008-10-01

    A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory.

  9. Mode-locked fiber laser based on chalcogenide microwires.

    Science.gov (United States)

    Al-Kadry, Alaa; El Amraoui, Mohammed; Messaddeq, Younès; Rochette, Martin

    2015-09-15

    We report the first mode-locked fiber laser using a chalcogenide microwire as the nonlinear medium. The laser is passively mode-locked with nonlinear polarization rotation and can be adjusted for the emission of solitons or noise-like pulses. The use of the microwire leads to a mode-locking threshold at the microwatt level and shortens the cavity length by 4 orders of magnitude with respect to other lasers of its kind. The controlled birefringence of the microwire, combined with a linear polarizer in the cavity, enables multiwavelength laser operation with tunable central wavelength, switchable wavelength separation, and a variable number of laser wavelengths. PMID:26371923

  10. Chalcogenide photovoltaics physics, technologies, and thin film devices

    CERN Document Server

    Scheer, Roland

    2011-01-01

    This first comprehensive description of the most important material properties and device aspects closes the gap between general books on solar cells and journal articles on chalcogenide-based photovoltaics. Written by two very renowned authors with years of practical experience in the field, the book covers II-VI and I-III-VI2 materials as well as energy conversion at heterojunctions. It also discusses the latest semiconductor heterojunction models and presents modern analysis concepts. Thin film technology is explained with an emphasis on current and future techniques for mass production, a

  11. Metal-metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices.

    Science.gov (United States)

    Zhang, Ruihong; Cho, Seonghyuk; Lim, Daw Gen; Hu, Xianyi; Stach, Eric A; Handwerker, Carol A; Agrawal, Rakesh

    2016-04-11

    Bulk metals and metal chalcogenides are found to dissolve in primary amine-dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(S(x),Se(1-x))3, and Cu2ZnSn(S(x)Se(1-x))4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Cu2ZnSn(S(x)Se(1-x))4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively. PMID:26981781

  12. Photo-induced changes in a hybrid amorphous chalcogenide/silica photonic crystal fiber

    DEFF Research Database (Denmark)

    Markos, Christos

    2014-01-01

    Photostructural changes in a hybrid photonic crystal fiber with chalcogenide nanofilms inside the inner surface of the cladding holes are experimentally demonstrated. The deposition of the amorphous chalcogenide glass films inside the silica capillaries of the fiber was made by infiltrating...... the nanocolloidal solution-based As25S75, while the photoinduced changes were performed by side illuminating the fiber near the bandgap edge of the formed glass nanofilms. The photoinduced effect of the chalcogenide glass directly red-shifts the transmission bandgap position of the fiber as high as similar to 20...

  13. Structural, electronic, magnetic and optical properties of neodymium chalcogenides using LSDA+U method

    Institute of Scientific and Technical Information of China (English)

    A Shankar; D P Rai; Sandeep; R K Thapa

    2012-01-01

    We have studied the electronic,magnetic and optical properties of neodymium chalcogenides by performing LSDA+U and full potential linearized augmented plane wave (FP-LAPW) method.The electronic structure calculation shows that the electronic states in Nd-chalcogenides were mainly contributed by Nd-4f electrons near Fermi energy and 3p,4p and 5p state electrons of X (S,Se and Te),respectively.We have also studied the absorption of light via the imaginary parts of the dielectric function of Nd-chalcogenides.

  14. Chalcogenide Microsphere Fabricated from Fiber Tapers Using Contact With a High-Temperature Ceramic Surface

    OpenAIRE

    Wang, Pengfei; Murugan, Ganapathy; Bramilla, Gilberto; Ding, Ming; Semenova, Yuliya; Wu, Qiang; Farrell, Gerald

    2012-01-01

    The fabrication 1 and characterization of a 2 chalcogenide glass microsphere resonator has been demonstrated. 3 At wavelengths near 1550 nm, whispering gallery mode 4 resonances can be efficiently excited in a 74-μm-diameter 5 chalcogenide glass microsphere via evanescent coupling using a 6 tapered silica glass fiber with a waist diameter of circa 2 μm. 7 Resonances with Q-factors greater than 105 were observed. 8 Due to the high nonlinearity properties of the chalcogenide 9 material and the ...

  15. Highly nonlinear chalcogenide glass micro/nanofiber devices: Design, theory, and octave-spanning spectral generation

    Science.gov (United States)

    Hudson, Darren D.; Mägi, Eric C.; Judge, Alexander C.; Dekker, Stephen A.; Eggleton, Benjamin J.

    2012-10-01

    In this review we consider the basic elements of tapering chalcogenide optical fibers for the generation of extreme spectral broadening through supercontinuum generation. Creating tapered nanofiber devices in chalcogenide fiber, which has an intrinsic nonlinearity that is two orders of magnitude higher than silica, has resulted in the demonstration of octave-spanning spectra using record low power. We first present a brief theoretical understanding of the tapering process that follows from the basic principle of mass conservation, and a geometric construction tool for the visualization of the shape of tapered fibers. This is followed by a theoretical treatment of dispersion engineering and supercontinuum generation in a chalcogenide nanofiber. In the final section, we cover the experimental implementation of the chalcogenide nanofiber and demonstrate an octave-spanning spectrum created with 150 W of peak power.

  16. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices

    OpenAIRE

    Shpotyuk, M. V.; Shpotyuk, O. I.; J. Cebulski; Kozyukhin, S.

    2016-01-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)–S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pu...

  17. New Trends in Amplifiers and Sources via Chalcogenide Photonic Crystal Fibers

    Directory of Open Access Journals (Sweden)

    L. Mescia

    2012-01-01

    Full Text Available Rare-earth-doped chalcogenide glass fiber lasers and amplifiers have great applicative potential in many fields since they are key elements in the near and medium-infrared (mid-IR wavelength range. In this paper, a review, even if not exhaustive, on amplification and lasing obtained by employing rare-earth-doped chalcogenide photonic crystal fibers is reported. Materials, devices, and feasible applications in the mid-IR are briefly mentioned.

  18. Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

    OpenAIRE

    Fedorenko, Yanina G.; Hughes, Mark A.; Colaux, Julien L.; Jeynes, C.; Gwilliam, Russell M.; Homewood, Kevin P.; Yao, Jin; Hewak, Dan W.; Lee, Tae-Hoon; Elliott, Stephen R; Gholipour, B.; Curry, Richard J.

    2014-01-01

    Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ion-beam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silico...

  19. Shaping of Looped Miniaturized Chalcogenide Fiber Sensing Heads for Mid-Infrared Sensing

    OpenAIRE

    Patrick Houizot; Marie-Laure Anne; Catherine Boussard-Plédel; Olivier Loréal; Hugues Tariel; Jacques Lucas; Bruno Bureau

    2014-01-01

    Chalcogenide glass fibers are promising photonic tools to develop Fiber Evanescent Wave Spectroscopy (FEWS) optical sensors working in the mid-infrared region. Numerous pioneering works have already been carried out showing their efficiency, especially for bio-medical applications. Nevertheless, this technology remains confined to academic studies at the laboratory scale because chalcogenide glass fibers are difficult to shape to produce reliable, sensitive and compact sensors. In this paper,...

  20. Gadolinium-Induced Multi-Effect on Properties of IR Transmitting Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    ZHAO Dong-Hui; XIA Fang; NIE Jia-Xiang; CHEN Guo-Rong; ZHANG Xiang-Hua; MA Hong-Li; ADAM Jean-Luc

    2004-01-01

    @@ We introduce gadolinium in chalcogenide glasses to exert unexpectedly the multiple magical effects on both optical and thermal mechanical properties of chalcogenide glasses. Notable increases in transition temperature Tg and microhardness Hv were observed due to structural densitication and microcrystallization. Calculated molar volume values, differential scanning calorimetry and x-ray diffraction measurements provide supporting evidences. Gadolinium also acts as oxygen getter by removing or weakening oxygen-related absorption bands,which is associated with the higher negative electrode potential.

  1. Design of fiber coupled Er3+: Chalcogenide microsphere amplifier via particle swarm optimization algorithm

    OpenAIRE

    Palma, Giuseppe; Bia, Pietro; Mescia, Luciano; Yano, Tetsuji; Nazabal, Virginie; Taguchi, Jun; Moréac, Alain; Prudenzano, Francesco

    2013-01-01

    A mid-IR amplifier consisting of a tapered chalcogenide fiber coupled to an Er3+-doped chalcogenide microsphere has been optimized via a particle swarm optimization (PSO) approach. More precisely, a dedicated three-dimensional numerical model, based on the coupled mode theory and solving the rate equations, has been integrated with the PSO procedure. The rate equations have included the main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important...

  2. Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

    International Nuclear Information System (INIS)

    Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors

  3. Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Li-Na; Wang, H.C.; Shen, Y.; Lin, Yuan-Hua, E-mail: linyh@mail.tsinghua.edu.cn; Nan, Ce-Wen [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2016-01-15

    Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors.

  4. Copper Antimony Chalcogenide Thin Film PV Device Development

    Energy Technology Data Exchange (ETDEWEB)

    Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

    2015-06-14

    Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

  5. 10 um wavefront spatial filtering first results with chalcogenide fibers

    CERN Document Server

    Bordé, P J; Nguyen, T; Amy-Klein, A; Daussy, C; Raynal, P; Léger, A; Mazé, G; Borde, Pascal; Perrin, Guy; Nguyen, Thanh; Amy-Klein, Anne; Daussy, Christophe; Raynal, Pierre-Ivan; Leger, Alain; Maze, Gwenael

    2003-01-01

    Wavefront cleaning by single-mode fibers has proved to be efficient in optical-infrared interferometry to improve calibration quality. For instance, the FLUOR instrument has demonstrated the capability of fluoride glass single-mode fibers in this respect in the K and L bands. New interferometric instruments developped for the mid-infrared require the same capability for the 8-12 um range. We have initiated a program to develop single-mode fibers in the prospect of the VLTI mid-infrared instrument MIDI and of the ESA/DARWIN and NASA/TPF missions that require excellent wavefront quality. In order to characterize the performances of chalcogenide fibers we are developping, we have set up an experiment to measure the far-field pattern radiated at 10 um. In this paper, we report the first and promising results obtained with this new component.

  6. Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

    Energy Technology Data Exchange (ETDEWEB)

    Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

    2013-04-30

    For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

  7. Analysis of switching conditions of chalcogenide alloys during crystallization

    Institute of Scientific and Technical Information of China (English)

    Wanhua Yu; C.D. Wright

    2006-01-01

    To understand the principle and limitation of chalcogenide alloy Ge2Sb2Te5 (GST) in solid-state memory devices during crystallization, it was necessary to develop a physically realistic model that could reflect the electrical and thermal properties of these media. A novel comprehensive numerical model has been developed for simulating these memory devices, which describes the electrical and thermal behavior using the solution of the nonlinear, time-dependent electrical and heat conduction equation. The finite-difference-time-domain technique was adopted to compute the electrical field and heat distribution in the device. Several contributing factors that affect the crystallization switching process such as the geometry of the GST layer, temperature and electric field dependency of the electrical conductivity have been discussed. The results of the simulations were then used to provide critical guidelines for fabrication and optimization of the device performance.

  8. Electrical conduction mechanism in GeSeSb chalcogenide glasses

    Indian Academy of Sciences (India)

    Vandana Kumari; Anusaiya Kaswan; D Patidar; Kananbala Sharma; N S Saxena

    2016-02-01

    Electrical conductivity of chalcogenide glassy system Ge$_{30−x}$Se$_{70}$Sb$_{x}$ ( = 10, 15, 20 and 25) prepared by melt quenching has been determined at different temperatures in bulk through the $I$–$V$ characteristic curves. It is quite evident from results that Poole–Frenkel conduction mechanisms hold good for conduction in these glasses in a given temperature range. The variation in electrical conductivity with composition was attributed to the Se–Sb bond concentration in the Se–Ge–Sb system. Results indicated that Ge$_5$Se$_{70}$Sb$_{25}$ showed the minimum resistance. In view of this the composition Ge$_5$Se$_{70}$Sb$_{25}$ may be coined as ‘critical composition’ in the proposed series. Also the activation energies of conduction of these glassy alloys have been calculated in higher and lower temperature range using the Arrhenius equation.

  9. Meyer–Neldel DC conduction in chalcogenide glasses

    Indian Academy of Sciences (India)

    S PraKash; Kulbir Kaur; Navdeep Goyal; S K Tripathi

    2011-04-01

    Meyer–Neldel (MN) formula for DC conductivity (DC) of chalcogenide glasses is obtained using extended pair model and random free energy barriers. The integral equations for DC hopping conductivity and external conductance are solved by iterative procedure. It is found that MN energy ( MN) originates from temperature-induced configurational and electronic disorders. Single polaron-correlated barrier hopping model is used to calculate DC and the experimental data of Se, As2S3, As2Se3 and As2Te3 are explained. The variation of attempt frequency 0 and MN with parameter (/), where is the intersite separation and is the radius of localized states, is also studied. It is found that 0 and MN decrease with increase of (/), and MN may not be present for low density of defects.

  10. Longitudinal Magnetoresistance and "Chiral" Coupling in Silver Chalcogenides

    Institute of Scientific and Technical Information of China (English)

    XU Jie; ZHANG Duan-Ming

    2011-01-01

    A complex longitudinal magnetoresistance (MR∥) effect in the non-stoichiometric silver chalcogenides (include the silver selenide and telluride) has been found, however the mechanism for the MR∥ effect is not clear now.In this work, a new random resistor network for MR∥ effect is proposed based on the experimental observation. The network is constructed from six-terminal resistor units and the mobility of carries within the network has a Gaussian distribution. Considering the non-zero transverse-longitudinal coupling in materials, the resistance matrix of the sixterminal resistor unit is modified. It is found that the material has the "chiral" transverse-longitudinal couplings, which is suggested a main reason for the complex MR∥ effect. The model predictions are compared with the experimental results.A three dimension (3D) visualization of current flow within the network demonstrates the "current jets" phenomenon in the thickness of materials clearly.

  11. High pressure phase transition and elastic properties of Lutetium chalcogenide

    International Nuclear Information System (INIS)

    Using first-principles density functional calculation, the pressure induced structural phase transformation and mechanical properties of NaCl type (B1) structure in Lutetium chalcogenides (LuX: X=S, Se, Te) were studied by means of the full-potential augmented plane wave plus local orbitals (FP-APW+lo) method. The calculations were performed within the generalized gradient approximation (GGA) for the exchange-correlation potential. The calculated ground state properties such us lattice constants agree quit well with the experimental findings. We have determined the full set of first-order elastic constants and their pressure dependence, which have not been calculated and measured yet. The Debye temperature is estimated from the average sound velocity. To our knowledge this is the first quantitative theoretical prediction of the structural phase transition and elastic properties for these compounds and still awaits experimental confirmations.

  12. Structural phase transition and elastic properties of mercury chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Shriya, S. [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria)

    2012-08-15

    Pressure induced structural transition and elastic properties of ZnS-type (B3) to NaCl-type (B1) structure in mercury chalcogenides (HgX; X = S, Se and Te) are presented. An effective interionic interaction potential (EIOP) with long-range Coulomb, as well charge transfer interactions, Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbor ions and van der Waals interactions are considered. Emphasis is on the evaluation of the pressure dependent Poisson's ratio {nu}, the ratio R{sub BT/G} of B (bulk modulus) over G (shear modulus), anisotropy parameter, Shear and Young's modulus, Lame constant, Kleinman parameter, elastic wave velocity and thermodynamical property as Debye temperature. The Poisson's ratio behavior infers that Mercury chalcogenides are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations. Highlights: Black-Right-Pointing-Pointer Vast volume discontinuity in phase diagram infers transition from ZnS to NaCl structure. Black-Right-Pointing-Pointer The shear elastic constant C{sub 44} is nonzero confirms the mechanical stability. Black-Right-Pointing-Pointer Pressure dependence of {theta}{sub D} infers the softening of lattice with increasing pressure. Black-Right-Pointing-Pointer Estimated bulk, shear and tetragonal moduli satisfied elastic stability criteria. Black-Right-Pointing-Pointer In both B3 and B1 phases, C{sub 11} and C{sub 12} increase linearly with pressure.

  13. Precision lens molding of asphero diffractive surfaces in chalcogenide materials

    Science.gov (United States)

    Nelson, J.; Scordato, M.; Schwertz, K.; Bagwell, J.

    2015-10-01

    Finished lens molding, and the similar process of precision lens molding, have long been practiced for high volume, accurate replication of optical surfaces on oxide glass. The physics surrounding these processes are well understood, and the processes are capable of producing high quality optics with great fidelity. However, several limitations exist due to properties inherent with oxide glasses. Tooling materials that can withstand the severe environmental conditions of oxide glass molding cannot easily be machined to produce complex geometries such as diffractive surfaces, lens arrays, and off axis features. Current machining technologies coupled with a limited selection of tool materials greatly limits the type of structures that can be molded into the finished optic. Tooling for chalcogenide glasses are not bound by these restrictions since the molding temperatures required are much lower than for oxide glasses. Innovations in tooling materials and manufacturing techniques have enabled the production of complex geometries to optical quality specifications and have demonstrated the viability of creating tools for molding diffractive surfaces, off axis features, datums, and arrays. Applications for optics having these features are found in automotive, defense, security, medical, and industrial domains. This paper will discuss results achieved in the study of various molding techniques for the formation of positive diffractive features on a concave spherical surface molded from As2Se3 chalcogenide glass. Examples and results of molding with tools having CTE match with the glass and non CTE match will be reviewed. The formation of stress within the glass during molding will be discussed, and methods of stress management will also be demonstrated and discussed. Results of process development methods and production of good diffractive surfaces will be shown.

  14. Raman and CT scan mapping of chalcogenide glass diffusion generated gradient index profiles

    Science.gov (United States)

    Lindberg, G. P.; Berg, R. H.; Deegan, J.; Benson, R.; Salvaggio, P. S.; Gross, N.; Weinstein, B. A.; Gibson, D.; Bayya, S.; Sanghera, J.; Nguyen, V.; Kotov, M.

    2016-05-01

    Metrology of a gradient index (GRIN) material is non-trivial, especially in the realm of infrared and large refractive index. Traditional methods rely on index matching fluids which are not available for indexes as high as those found in the chalcogenide glasses (2.4-3.2). By diffusing chalcogenide glasses of similar composition one can blend the properties in a continuous way. In an effort to measure this we will present data from both x-ray computed tomography scans (CT scans) and Raman mapping scans of the diffusion profiles. Proof of concept measurements on undiffused bonded sheets of chalcogenide glasses were presented previously. The profiles measured will be of axially stacked sheets of chalcogenide glasses diffused to create a linear GRIN profile and nested tubes of chalcogenide glasses diffused to create a radial parabolic GRIN profile. We will show that the x-ray absorption in the CT scan and the intensity of select Raman peaks spatially measured through the material are indicators of the concentration of the diffusion ions and correlate to the spatial change in refractive index. We will also present finite element modeling (FEM) results and compare them to post precision glass molded (PGM) elements that have undergone CT and Raman mapping.

  15. Thermochemical hydrogen sensor based on chalcogenide nanowire arrays

    International Nuclear Information System (INIS)

    The hydrogen gas-sensing properties have been investigated of two types of thermochemical hydrogen (TCH) sensors composed of thermoelectric layers based on chalcogenide nanowire arrays and anodic aluminum oxide (AAO) templates. The monomorphic-type TCH sensor, which had only Bi2Te3 nanowire arrays, showed an output signal of 23.7 μV in response to 5 vol% hydrogen gas at room temperature, whereas an output signal of 215 μV was obtained from an n–p junction-type TCH sensor made of connected Bi2Te3 and Sb2Te3 nanowire arrays in an AAO template. Despite its small deposition area, the output signal of the n–p sensor was more than nine times that of the monomorphic sensor. This observation can be explained by the difference in electrical connections (parallel and serial conversions) in the TCH sensor between each type of nanowire array. Also, our n–p sensor had a wide detection range for hydrogen gas (from 400 ppm to 45 vol%) and a fast response time of 1.3 s at room temperature without requiring external power. (paper)

  16. Raman spectroscopy of chalcogenide thin films prepared by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Erazu, M.; Rocca, J. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Fontana, M., E-mail: merazu@fi.uba.a [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Urena, A.; Arcondo, B. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Pradel, A. [ICG, UMR 5253 CNRS UM 2 ENSCM UM1 equipe PMDP CC3, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

    2010-04-16

    Chalcogenide glasses have many technological applications as a result of their particular optical and electrical properties. Ge-Se and Ag-Ge-Se systems were recently studied and tested as new materials for building non-volatile memories. Following these ideas, thin films of Ge-Se and Ag-Ge-Se were deposited using pulsed laser deposition (PLD). Ag was sputtered over binary films (for a composition between 0.05 and 0.25 Ag atomic fraction) and photo-diffused afterwards. Thus, three kinds of samples were analyzed by means of Raman spectroscopy, in order to provide information on the short- and medium-range order: PLD binary films before Ag doping, after Ag doping and PLD ternary films. Before Ag doping, binary films exhibited Ge-Se corner-sharing tetrahedra modes at 190 cm{sup -1}, low scattering from edge-sharing tetrahedra at 210 cm{sup -1}, and Se chains at 260 cm{sup -1} (stretching mode). However, after the diffusion process was complete, we observed an intensity reduction of bands centered at 210 cm{sup -1} and 260 cm{sup -1}. The spectra of the photo-diffused films were similar to those of films deposited using a ternary target. Relaxation effects in binary glasses were also analyzed. Results were compared with those of other authors.

  17. Palladium and platinum organochalcogenolates and their transformation into metal chalcogenides

    Indian Academy of Sciences (India)

    S Dey; S Narayan; A Singhal; V K Jain

    2000-06-01

    Platinum group metal chalcogenides find extensive applications in catalysis and in the electronic industry. To develop an efficient low temperature clean preparation of these materials, molecular routes have been explored. Thus the chemistry of mononuclear organochalcogenolates of the type [M(ER 1/4)2(PR3)2], binuclear benzylselenolates, [M2Cl2(∼-SeBz)2(PR3)2], allylpalladium complexes [Pd2(μ-ER)2(3-C4H7)2] and palladium/platinum sulphido/selenido-bridged complexes, [M2(μ-E)2L4] (M = Pd or Pt; E = S, Se or Te; L = tertiary phosphine ligand) has been investigated. All the complexes have been characterized by elemental analysis, NMR (1 H, 31P, 77Se, 195Pt) spectroscopy and in some cases by X-ray diffraction. The thermal behaviour of these complexes has been studied by TGA. The pyrolysis of allylpalladium complexes in refluxing xylene yields Pd4E as established by analysis and XRD patterns.

  18. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices.

    Science.gov (United States)

    Shpotyuk, M V; Shpotyuk, O I; Cebulski, J; Kozyukhin, S

    2016-12-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)-S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pure agglomerates of metallic nanoparticles. In an excellence according to known experimental data, it is suggested that destructive clustering of nanoparticles is possible in Cu-, Ag-, and Au-ion-implanted dielectric oxide glass media, possessing a strongly negative χ-criterion. Some recent speculations trying to ascribe equally this ability to soft chalcogenide glasses despite an obvious difference in the corresponding bond dissociation energies have been disclosed and criticized as inconclusive. PMID:26787053

  19. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices.

    Science.gov (United States)

    Shpotyuk, M V; Shpotyuk, O I; Cebulski, J; Kozyukhin, S

    2016-12-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)-S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pure agglomerates of metallic nanoparticles. In an excellence according to known experimental data, it is suggested that destructive clustering of nanoparticles is possible in Cu-, Ag-, and Au-ion-implanted dielectric oxide glass media, possessing a strongly negative χ-criterion. Some recent speculations trying to ascribe equally this ability to soft chalcogenide glasses despite an obvious difference in the corresponding bond dissociation energies have been disclosed and criticized as inconclusive.

  20. Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit.

    Science.gov (United States)

    Yuan, Hongtao; Liu, Zhongkai; Xu, Gang; Zhou, Bo; Wu, Sanfeng; Dumcenco, Dumitru; Yan, Kai; Zhang, Yi; Mo, Sung-Kwan; Dudin, Pavel; Kandyba, Victor; Yablonskikh, Mikhail; Barinov, Alexei; Shen, Zhixun; Zhang, Shoucheng; Huang, Yingsheng; Xu, Xiaodong; Hussain, Zahid; Hwang, Harold Y; Cui, Yi; Chen, Yulin

    2016-08-10

    Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications. PMID:27357620

  1. Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

    Institute of Scientific and Technical Information of China (English)

    李超然; 戴世勋; 张勤远; 沈祥; 王训四; 张培晴; 路来伟; 吴越豪; 吕社钦

    2015-01-01

    We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q (∼6×104) laser mode could be obtained from a 75-µm diameter microsphere that is coupled with a 1.77-µm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser.

  2. Investigations on the properties of solid solutions of pseudo-binary lead chalcogenides

    International Nuclear Information System (INIS)

    Lead chalcogenides and their solid solutions with detecting and lasing capabilities have great technological importance. High quality polycrystalline thin films of solid solutions of pseudo-binary lead chalcogenides have been deposited onto ultra clean glass substrates by vacuum evaporation technique. Optical, electrical and structural properties of the thin films of the solid solutions of pseudo-binary lead chalcogenides have been investigated. Absorption coefficient and band gap of films were determined by absorbance measurements in wavelength range 2500-5000 nm using FTIR spectrophotometer. dc conductivity and activation energy of films were measured in temperature range 300-380 K using two probe I-V characteristics method. Crystal structure and lattice parameters of films were determined from X-ray diffractogram.

  3. Solubilities of nickel and cobalt chalcogenides in a nuclear waste glass melt

    International Nuclear Information System (INIS)

    The solubilities of NiS, NiSe, NiTe, CoS, and CoSe were determined in the reference glass melt SRL-131 (Savannah River Laboratory frit number-sign 131) as a function of the melt temperature and imposed oxygen fugacity. The solubility of each metal chalcogenide was monitored by the concentration of both the cation and the anion in the glass melt equilibrated with an immiscible metal chalcogenide layer. The solubilities of the chalcogenides decrease with decreasing oxygen fugacity. In general, NIS is the least soluble of these compounds in SRL-131. Thus, processing conditions must be adjusted to avoid the formation of NiS during accidental excursions to reducing conditions; alternatively, NiS could be intentionally precipitated from the waste system to concentrate precious metals

  4. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  5. Double optical bistability and its application in nonlinear chalcogenide-fiber Bragg gratings

    International Nuclear Information System (INIS)

    We study the continuous wave (CW) nonlinear transmission characteristics of chalcogenide-fiber Bragg gratings (c-FBGs). The set of Cubic quintic septic nonlinear coupled mode equations (CQSNLCMEs) is derived analytically to govern nonlinear wave propagation in c-FBGs by counting until seventh-order nonlinearity in chalcogenide glass. Double-optical bistability is observed in the CW nonlinear transmission characteristics of π phase-shifted c-FBG. Based on unstable state principle in the hysteresis, all-optical transistor operation is shown as a prominent application of optical bistability in such device

  6. Chalcogenide-based optical parametric oscillator at 2  μm.

    Science.gov (United States)

    Abdukerim, Nurmemet; Li, Lizhu; Rochette, Martin

    2016-09-15

    We report the first chalcogenide-based optical parametric oscillator (OPO) relying on pure parametric gain. The all-fiber OPO operates in the wavelength range of 2 μm and is tunable over 290 nm from the combined Stokes and anti-Stokes contributions. The gain medium is a 10 cm long chalcogenide microwire made from a high modal confinement As2Se3 core with cyclo olefin polymer cladding, leading to optimized chromatic dispersion, high nonlinearity, and broadband transparency. With a power threshold of only a fraction of a milliwatt, this design is promising for the fabrication of tunable, compact, and low-power consumption mid-infrared sources.

  7. Rings, chains and planes: Variation of g with composition in chalcogenide glasses

    Indian Academy of Sciences (India)

    P K Thiruvikraman

    2006-08-01

    We propose a microscopic, phenomenological model for the decrease in the viscosity observed at glass transition. Our model is primarily applicable to chalcogenide glasses. According to this model, the decrease in the viscosity at glass transition is mainly due to the breaking of the Van der Waals bonds in the chalcogenides. Using this model, we derive a relationship between the glass transition temperature, g, and the molar volume m. The validity of this relation is checked using experimental data available in the literature for two binary systems (Ge–Se and As–S) and a pseudo-binary system (As40SeTe60–).

  8. Tolerant chalcogenide cathodes of membraneless micro fuel cells.

    Science.gov (United States)

    Gago, Aldo Saul; Gochi-Ponce, Yadira; Feng, Yong-Jun; Esquivel, Juan Pablo; Sabaté, Neus; Santander, Joaquin; Alonso-Vante, Nicolas

    2012-08-01

    The most critical issues to overcome in micro direct methanol fuel cells (μDMFCs) are the lack of tolerance of the platinum cathode and fuel crossover through the polymer membrane. Thus, two novel tolerant cathodes of a membraneless microlaminar-flow fuel cell (μLFFC), Pt(x)S(y) and CoSe(2), were developed. The multichannel structure of the system was microfabricated in SU-8 polymer. A commercial platinum cathode served for comparison. When using 5 M CH(3)OH as the fuel, maximum power densities of 6.5, 4, and 0.23 mW cm(-2) were achieved for the μLFFC with Pt, Pt(x)S(y), and CoSe(2) cathodes, respectively. The Pt(x)S(y) cathode outperformed Pt in the same fuel cell when using CH(3)OH at concentrations above 10 M. In a situation where fuel crossover is 100 %, that is, mixing the fuel with the reactant, the maximum power density of the micro fuel cell with Pt decreased by 80 %. However, for Pt(x)S(y) this decrease corresponded to 35 % and for CoSe(2) there was no change in performance. This result is the consequence of the high tolerance of the chalcogenide-based cathodes. When using 10 M HCOOH and a palladium-based anode, the μLFFC with a CoSe(2) cathode achieved a maxiumum power density of 1.04 mW cm(-2). This micro fuel cell does not contain either Nafion membrane or platinum. We report, for the first time, the evaluation of Pt(x)S(y)- and CoSe(2)-based cathodes in membraneless micro fuel cells. The results suggest the development of a novel system that is not size restricted and its operation is mainly based on the selectivity of its electrodes.

  9. An overview of the Fe-chalcogenide superconductors

    Science.gov (United States)

    Wu, M. K.; Wu, P. M.; Wen, Y. C.; Wang, M. J.; Lin, P. H.; Lee, W. C.; Chen, T. K.; Chang, C. C.

    2015-08-01

    This review intends to summarize recent advancements in FeSe and related systems. The FeSe and related superconductors are currently receiving considerable attention for the high critical temperature (T C) observed and for many similar features to the high T C cuprate superconductors. These similarities suggest that understanding the FeSe-based compounds could potentially help our understanding of the cuprates. We begin the review by presenting common features observed in the FeSe- and FeAs-based systems. Then we discuss the importance of careful control of the material preparation allowing for a systematic structure characterization. With this control, numerous rich phases have been observed. Importantly, we suggest that the Fe-vacancy ordered phases found in the FeSe-based compounds, which are non-superconducting magnetic Mott insulators, are the parent compounds of the superconductors. Superconductivity can emerge from the parent phases by disordering the Fe vacancy order, often by a simple annealing treatment. Then we review physical properties of the Fe chalcogenides, specifically the optical properties and angle-resolved photoemission spectroscopy (ARPES) results. From the literature, strong evidence points to the existence of orbital modification accompanied by a gap-opening, prior to the structural phase transition, which is closely related to the occurrence of superconductivity. Furthermore, strong lattice to spin coupling are important for the occurrence of superconductivity in FeSe. Therefore, it is believed that the iron selenides and related compounds will provide essential information to understand the origin of superconductivity in the iron-based superconductors, and possibly the superconducting cuprates.

  10. Static Behavior of Chalcogenide Based Programmable Metallization Cells

    Science.gov (United States)

    Rajabi, Saba

    Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities. The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior. The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of

  11. Localized rapid heating process for precision chalcogenide glass molding

    Science.gov (United States)

    Li, Hui; He, Peng; Yu, Jianfeng; Lee, L. James; Yi, Allen Y.

    2015-10-01

    Precision glass molding is an important process for high volume optical fabrication. However, conventional glass molding is a bulk heating process that usually requires a long thermal cycle, where molding assembly and other mechanical parts are heated and cooled together. This often causes low efficiency and other heating and cooling related problems, such as large thermal expansion in both the molds and molded optics. To cope with this issue, we developed a localized rapid heating process to effectively heat only very small part of the glass. This localized rapid heating study utilized a fused silica wafer coated with a thin graphene layer to heat only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating heat on and near the coating. The feasibility of this process was validated by both experiments and numerical simulation. To demonstrate the advantages of the localized rapid heating, both localized rapid heating process and bulk heating process were performed and carefully compared. The uniformity and quality of the molded sample by localized rapid heating process was also demonstrated. In summary, localized rapid heating process by using graphene coated fused silica wafer was characterized and can be readily implemented in replication of micro scale chalcogenide glasses. A fused silica wafer coated with a thin graphene layer was utilized for localized rapid heating only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating high temperature on and near the coating. This process is fast and efficient since only interested areas are heated without affecting the entire glass substrate or the mold assembly. The uniformity and quality of the molded sample by localized rapid heating process was demonstrated by comparing both localized rapid heating

  12. Coherent mid-infrared supercontinuum generation in all-solid chalcogenide microstructured fibers with all-normal dispersion.

    Science.gov (United States)

    Liu, Lai; Cheng, Tonglei; Nagasaka, Kenshiro; Tong, Hoangtuan; Qin, Guanshi; Suzuki, Takenobu; Ohishi, Yasutake

    2016-01-15

    We report the coherent mid-infrared supercontinuum generation in an all-solid chalcogenide microstructured fiber with all-normal dispersion. The chalcogenide microstructured fiber is a four-hole structure with core material of AsSe2 and air holes that are replaced by As2S5 glass rods. Coherent mid-infrared supercontinuum light extended to 3.3 μm is generated in a 2 cm long chalcogenide microstructured fiber pumped by a 2.7 μm laser. PMID:26766722

  13. Native metastability in chalcogenide glasses described within configuration-coordinate model

    International Nuclear Information System (INIS)

    It was created configuration-coordinate model for describing of native metastability in chalcogenide glasses. It was shown that potential should be at least triple-well. System of differential equations for describing transitions between the atomic states was made and solved within present configuration-coordinate model

  14. Positron lifetime study of native vacancy-like defects in chalcogenide glasses

    International Nuclear Information System (INIS)

    Modified model for positron annihilation in vitreous chalcogenide semiconductors is developed to explain a number of previously obtained results on positron lifetime measurements in glassy As-Ge-S of stoichiometric As2S3-GeS2 and non-stoichiometric As2S3-Ge2S3 cut-sections

  15. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

    Directory of Open Access Journals (Sweden)

    Fei Zhuge

    2015-05-01

    Full Text Available It has been reported that in chalcogenide-based electrochemical metallization (ECM memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S, the metal filament grows from the cathode (e.g., Pt and W towards the anode (e.g., Cu and Ag, whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2. The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

  16. Native metastability in chalcogenide glasses described within configuration-coordinate model

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M [Institute of Materials of Scientific Research Company ' Carat' , 202, Stryjska str., Lviv (Ukraine); Vakiv, M [Institute of Materials of Scientific Research Company ' Carat' , 202, Stryjska str., Lviv (Ukraine)

    2007-08-15

    It was created configuration-coordinate model for describing of native metastability in chalcogenide glasses. It was shown that potential should be at least triple-well. System of differential equations for describing transitions between the atomic states was made and solved within present configuration-coordinate model.

  17. Driving Oxygen Coordinated Ligand Exchange at Nanocrystal Surfaces using Trialkylsilylated Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Caldwell, Marissa A.; Albers, Aaron E.; Levy, Seth C.; Pick, Teresa E.; Cohen, Bruce E.; Helms, Brett A.; Milliron, Delia J.

    2010-11-11

    A general, efficient method is demonstrated for exchanging native oxyanionic ligands on inorganic nanocrystals with functional trimethylsilylated (TMS) chalcogenido ligands. In addition, newly synthesized TMS mixed chalcogenides leverage preferential reactivity of TMS-S bonds over TMS-O bonds, enabling efficient transfer of luminescent nanocrystals into aqueous media with retention of their optical properties.

  18. Open framework metal chalcogenides as efficient photocatalysts for reduction of CO2 into renewable hydrocarbon fuel

    Science.gov (United States)

    Sasan, Koroush; Lin, Qipu; Mao, Chengyu; Feng, Pingyun

    2016-05-01

    Open framework metal chalcogenides are a family of porous semiconducting materials with diverse chemical compositions. Here we show that these materials containing covalent three-dimensional superlattices of nanosized supertetrahedral clusters can function as efficient photocatalysts for the reduction of CO2 to CH4. Unlike dense semiconductors, metal cations are successfully incorporated into the channels of the porous semiconducting materials to further tune the physical properties of the materials such as electrical conductivity and band gaps. In terms of the photocatalytic properties, the metal-incorporated porous chalcogenides demonstrated enhanced solar energy absorption and higher electrical conductivity and improved photocatalytic activity.Open framework metal chalcogenides are a family of porous semiconducting materials with diverse chemical compositions. Here we show that these materials containing covalent three-dimensional superlattices of nanosized supertetrahedral clusters can function as efficient photocatalysts for the reduction of CO2 to CH4. Unlike dense semiconductors, metal cations are successfully incorporated into the channels of the porous semiconducting materials to further tune the physical properties of the materials such as electrical conductivity and band gaps. In terms of the photocatalytic properties, the metal-incorporated porous chalcogenides demonstrated enhanced solar energy absorption and higher electrical conductivity and improved photocatalytic activity. Electronic supplementary information (ESI) available: The synthetic procedure, facilities information, EDX patterns and UV-Vis data. See DOI: 10.1039/c6nr02525k

  19. Continuous wave four-wave mixing at 2 micron in Chalcogenide microstructured fiber

    OpenAIRE

    Grassani, Davide; Xing, Sida; Kharitonov, Svyatoslav; Billat, Adrien; Cordette, Steevy Joyce; Vedadi, Armand; Brès, Camille

    2015-01-01

    We present the first demonstration of continuous-wave four-wave mixing at 2μm in short chalcogenide microstructured fiber. Idlers over approximately 15nm on anti-Stokes side of the pump were measured for a coupled pump power of 94mW.

  20. Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

    Science.gov (United States)

    Zhou, Yubing; Deng, Bing; Zhou, Yu; Ren, Xibiao; Yin, Jianbo; Jin, Chuanhong; Liu, Zhongfan; Peng, Hailin

    2016-03-01

    The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive high-temperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ∼100 °C. Uniform and large-domain-sized 2D crystals of GaSe and GaxIn1-xSe were grown on liquid metal surface even supported on a polyimide film. As-grown 2D GaSe crystals have been fabricated to flexible photodetectors, showing high photoresponse and excellent flexibility. Our strategy of energy-sustainable low-temperature growth on liquid metal surface may open a route to the synthesis of high-quality 2D crystals of Ga-, In-, Bi-, Hg-, Pb-, or Sn-based chalcogenides and halides. PMID:26913671

  1. Generation of correlated photon pairs in a chalcogenide As2S3 waveguide

    NARCIS (Netherlands)

    Xiong, C.; Marshall, G.D.; Peruzzo, A.; Lobino, M.; Clark, A.S.; Choi, D.Y.; Madden, S.J.; Natarajan, C.M.; Tanner, M.G.; Hadfield, R.H.; Dorenbos, S.N.; Zijlstra, T.; Zwiller, V.; Thompson, M.G.; Rarity, J.G.; Steel, M.J.; Luther-Davies, B.; Eggleton, B.J.; O'Brien, J.L.

    2011-01-01

    We demonstrate a 1550 nm correlated photon-pair source in an integrated glass platform—a chalcogenide As2S3 waveguide. A measured pair coincidence rate of 80 s−1 was achieved using 57 mW of continuous-wave pump. The coincidence to accidental ratio was shown to be limited by spontaneous Raman scatter

  2. High Average Power Mid-infrared Supercontinuum Generation in a Suspended Core Chalcogenide Fiber

    DEFF Research Database (Denmark)

    Møller, Uffe Visbech; Yu, Yi; Petersen, Christian Rosenberg;

    2014-01-01

    Mid-infrared supercontinuum spanning from 2.0 to 6.1 μm is generated in a 9 cm suspended core chalcogenide fiber by pumping close to the fiber zero-dispersion wavelength at 3.5 μm with an OPA system...

  3. Origin of the frequency shift of Raman scattering in chalcogenide glasses

    DEFF Research Database (Denmark)

    Han, X.C.; Tao, H.Z.; Gong, L.J.;

    2014-01-01

    Raman scattering is a sensitive method for probing the structural evolution in glasses, especially in covalent ones. Usually the main Raman scattering frequency shifts with composition for Gesingle bondSe chalcogenide glasses. However, it has not been well established whether and how the dependen...

  4. Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

    Science.gov (United States)

    Nessel, James; Miranda, Felix

    2013-01-01

    A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

  5. Laser annealing and defect study of chalcogenide photovoltaic materials

    Science.gov (United States)

    Bhatia, Ashish

    Cu(In,Ga)Se2 (CIGSe), CuZnSn(S,Se)4(CZTSSe), etc., are the potential chalcogenide semiconductors being investigated for next-generation thin film photovoltaics (TFPV). While the champion cell efficiency of CIGSe has exceeded 20%, CZTSSe has crossed the 10% mark. This work investigates the effect of laser annealing on CISe films, and compares the electrical characteristics of CIGSe (chalcopyrite) and CZTSe (kesterite) solar cells. Chapter 1 through 3 provide a background on semiconductors and TFPV, properties of chalcopyrite and kesterite materials, and their characterization using deep level transient spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). Chapter 4 investigates electrochemical deposition (nonvacuum synthesis) of CISe followed by continuous wave laser annealing (CWLA) using a 1064 nm laser. It is found that CWLA at ≈ 50 W/cm2 results in structural changes without melting and dewetting of the films. While Cu-poor samples show about 40% reduction in the full width at half maximum of the respective x-ray diffraction peaks, identically treated Cu-rich samples register more than 80% reduction. This study demonstrates that an entirely solid-phase laser annealing path exists for chalcopyrite phase formation and crystallization. Chapter 5 investigates the changes in defect populations after pulse laser annealing in submelting regime of electrochemically deposited and furnace annealed CISe films. DLTS on Schottky diodes reveal that the ionization energy of the dominant majority carrier defect state changes nonmonotonically from 215+/-10 meV for the reference sample, to 330+/-10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215+/-10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. Chapter 6 compares the electrical characteristics of chalcopyrite and kesterite materials. Experiments reveal CZTSe cell has an

  6. Coherent mid-infrared supercontinuum generation in all-solid chalcogenide microstructured fibers with all-normal dispersion

    Science.gov (United States)

    Liu, Lai; Cheng, Tonglei; Nagasaka, Kenshiro; Tong, Hoang Tuan; Suzuki, Takenobu; Ohishi, Yasutake

    2016-02-01

    We report the coherent mid-infrared supercontinuum generation in an all-solid chalcogenide microstructured fiber with all-normal dispersion. The chalcogenide microstructured fiber is four-hole structure with core material of AsSe2 and air holes are replaced by As2S5 glass rods. Coherent mid-infrared supercontinuum light is generated in a 2-cm-long chalcogenide microstructured fiber pumped by a 2.7 μm laser. The simulated and experimental results have a good match and the coherence property of supercontinuum light in the chalcogenide microstructured fiber has been studied by using the complex degree of coherence theory. Coherent mid-infrared supercontinuum generation is extended to 3.3 μm in this work.

  7. Effect of the Chalcogenide Element Doping on the Electronic Properties of Co2FeAl Heusler Alloys

    Science.gov (United States)

    Huang, Ting; Cheng, Xiao-min; Guan, Xia-wei; Miao, Xiang-shui

    2016-02-01

    The electronic properties of the typical Heusler compound Co2FeAl with chalcogenide element doping were investigated by means of first principles calculations within the local spin-density approximation (LSDA) + Hubbard U parameter (U). The calculations indicate that, only when 25% of the number of Al atoms is substituted by the chalcogenide element, the chalcogenide element-doped Co2FeAl shows the half metallic properties. The Fermi energy ( E F) of the 25% chalcogenide element-doped Co2FeAl is located in the middle of the gap of the minority states instead of around the top of the valence band as in Co2FeAl. Moreover, the band gap of 25% Te-doped Co2FeAl (0.80 eV) is wider than that of Co2FeAl (0.74 eV). These improved electronic structures will make 25% chalcogenide element-doped Co2FeAl more stable against temperature variation. Therefore, the expected excellent stability of the 25% chalcogenide element-doped Co2FeAl make it more suitable for spintronic applications than Co2FeAl.

  8. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    Energy Technology Data Exchange (ETDEWEB)

    Aminorroaya Yamini, Sima, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu; Dou, Shi Xue [Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Mitchell, David R. G. [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Wang, Heng [Materials Science, California Institute of Technology, Pasadena, CA 91125 (United States); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125 (United States); Pei, Yanzhong [School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804 (China); Snyder, G. Jeffrey, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); ITMO University, Saint Petersburg (Russian Federation)

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  9. Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

    International Nuclear Information System (INIS)

    Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ2-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers

  10. All chalcogenide Raman parametric Laser, Wavelength Converter and Amplifier in a Single Microwire

    CERN Document Server

    Ahmad, Raja

    2013-01-01

    Compact, power efficient and fiber compatible lasers, wavelength converters and amplifiers are vital ingredients for the future fiber optic systems and networks. Nonlinear optical effects, like Raman scattering and parametric four wave mixing, offer a way to realize such devices. Here we use a single chalcogenide microwire to realize a device that provides the functions of a Stokes Raman parametric laser, a four wave mixing anti Stokes wavelength converter, and an ultra broadband Stokes/anti Stokes Raman amplifier or supercontinuum generator. The device operation relies on ultrahigh Raman and Kerr gain (upto five orders of magnitude larger than in silica fibers), precisely engineered chromatic dispersion and high photosensitivity of the chalcogenide microwire. The Raman parametric laser operates at a record low threshold average (peak) pump power of 52 \\muW (207 mW) and a slope efficiency of >2%. A powerful anti Stokes signal is generated via the nonlinear four wave mixing process. As amplifier or the broadba...

  11. Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ailavajhala, Mahesh S.; Mitkova, Maria [Department of Electrical Engineering, Boise State University, 1910 University Dr. Boise, Idaho 83725-2075 (United States); Gonzalez-Velo, Yago; Barnaby, Hugh; Kozicki, Michael N.; Holbert, Keith [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-9309 (United States); Poweleit, Christian [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Butt, Darryl P. [Department of Material Science and Engineering, Boise State University, 1910 University Dr. Boise, Idaho 83725-2090 (United States)

    2014-01-28

    We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.

  12. Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland); Ingram, A. [Opole University of Technology, 75 Ozimska Str., Opole 45370 (Poland); Shpotyuk, M. [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv 79013 (Ukraine); Filipecki, J. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland)

    2014-11-01

    Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ{sub 2}-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

  13. Low-power Mid-IR Supercontinuum and Rogue Wave Generation in Chalcogenide Waveguides

    CERN Document Server

    Hernandez, Santiago M; Bonetti, Juan; Grosz, Diego F

    2016-01-01

    We present numerical results of supercontinuum (SC) generation in the mid-IR spectral region, specifically addressing the molecular fingerprint window ranging from 2.5 to 25 um. By solving the Generalized Nonlinear Schr\\"odinger Equation (GNLSE) in a chalcogenide waveguide, we demonstrate low-power SC generation beyond 10 um from a pump at 5 um. Further, we investigate the short-pulse and CW regimes, and show that a simple linear dispersion profile, applicable to a broad range of chalcogenide media, is sufficient to account for the broad SC generation, and yield rich pulse dynamics leading to the frequent occurrence of rogue wave events. Results are encouraging as they point to the feasibility of producing bright and coherent light, by means of single low-power tabletop laser pumping schemes, in a spectral region that finds applications in such diverse areas as molecular spectroscopy, metrology and tomography, among others, and that is not easily addressable with other light sources

  14. Recording of polarization holograms in a liquid crystal cell with a photosensitive chalcogenide orientation layer [Invited].

    Science.gov (United States)

    Sheremet, Nina; Kurioz, Yuriy; Slyusarenko, Kostyantyn; Trunov, Michael; Reznikov, Yuriy

    2013-08-01

    Polarization gratings have been recorded in a combined liquid crystal (LC) cell made of a substrate covered with a photosensitive chalcogenide orientation layer and a reference substrate covered with a rubbed polyimide film. The gratings are formed due to the spatially modulated light-induced easy orientation axis on the chalcogenide surface recorded by two beams with opposite circular polarizations. The gratings are permanent, but they can be erased by one of the recording beams and re-recorded. The diffraction intensity of the circularly polarized light is achromatic and does not depend on the birefringence of the LC. The diffraction efficiency of the grating is of the order of a few percents. Application of an ac field causes a strong increase of the diffraction efficiency up to 45%. PMID:23913086

  15. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    International Nuclear Information System (INIS)

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe)(0.9−x)(PbSe)0.1(PbS)x, (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance

  16. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    Science.gov (United States)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  17. Updated results on prototype chalcogenide fibers for 10-um wavefront spatial filtering

    OpenAIRE

    Borde, P.; Perrin, G.; Amy-Klein, A.; Daussy, C; Maze, G.

    2003-01-01

    The detection of terrestrial planets by Darwin/TPF missions will require extremely high quality wavefronts. Single-mode fibers have proven to be powerful beam cleaning components in the near-infrared, but are currently not available in the mid-infrared where they would be critically needed for Darwin/TPF. In this paper, we present updated measurements on the prototype chalcogenide fibers we are developing for the purpose of mid-infrared spatial filtering. We demonstrate the guiding property o...

  18. Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

    International Nuclear Information System (INIS)

    Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge23.5Sb11.8S64.7 glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Radiation-induced effects in chalcogenide glasses: Topological mechanisms and application

    International Nuclear Information System (INIS)

    Structural transformations in vitreous As2S3-based chalcogenide semiconducting glasses induced by γ-irradiation have been considered on the basis of IR Fourier spectroscopy results as destruction-polymerization changes of the covalent chemical bonds, associated with specific coordination defects formation. The whole variety of these processes has been taken into account in order to construct the physically real variants of the radiation-induced structural changes

  20. New functionality of chalcogenide glasses for radiation sensing of nuclear wastes

    Energy Technology Data Exchange (ETDEWEB)

    Ailavajhala, M.S., E-mail: m.ailavajhala@gmail.com [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States); Gonzalez-Velo, Y. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 (United States); Poweleit, C.D. [Department of Physics, Arizona State University, Tempe, AZ 85287-5706 (United States); Barnaby, H.J.; Kozicki, M.N. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 (United States); Butt, D.P. [Department of Materials Science and Engineering, Boise State University, Boise, ID 83725 (United States); Mitkova, M., E-mail: maheshailavajhala@u.boisestate.edu [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States)

    2014-03-01

    Highlights: • Study of thin film chalcogenide glasses under gamma radiation and a proposed radiation sensor design. • Structural changes were observed at various radiation doses. • Formation of Ag{sub 2}Se in Se depleted glasses with sufficient radiation dose. • In conventional semiconductor chip environment, the proposed sensor has a linear current vs. dose behavior up to 600 J/cm{sup 2}. - Abstract: Data about gamma radiation induced effects in Ge{sub 40}Se{sub 60} chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I–V) and impedance measurements expound the behavior of Ge{sub 40}Se{sub 60} glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag{sub 2}Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I–V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films.

  1. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

    1997-12-31

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

  2. Radiation-induced effects in chalcogenide glasses: Topological mechanisms and application

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I. E-mail: karat@ipm.lviv.ua

    2000-05-02

    Structural transformations in vitreous As{sub 2}S{sub 3}-based chalcogenide semiconducting glasses induced by {gamma}-irradiation have been considered on the basis of IR Fourier spectroscopy results as destruction-polymerization changes of the covalent chemical bonds, associated with specific coordination defects formation. The whole variety of these processes has been taken into account in order to construct the physically real variants of the radiation-induced structural changes.

  3. Positron lifetime study of native vacancy-like defects in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Filipecki, J.; Shpotyuk, O.I. E-mail: shpotyuk@novas.lviv.ua; Kozdras, A.; Kovalskiy, A.P

    2003-11-01

    Modified model for positron annihilation in vitreous chalcogenide semiconductors is developed to explain a number of previously obtained results on positron lifetime measurements in glassy As-Ge-S of stoichiometric As{sub 2}S{sub 3}-GeS{sub 2} and non-stoichiometric As{sub 2}S{sub 3}-Ge{sub 2}S{sub 3} cut-sections.

  4. High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

    Energy Technology Data Exchange (ETDEWEB)

    Bernacki, Bruce E.

    2012-10-05

    This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

  5. Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion

  6. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  7. Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD

    OpenAIRE

    Huang, C.; Alzaidy, Ghadah A.; Aspiotis, Nikolaos; Weatherby, Ed C.; Wang, Shuncai; John C Walker; Jiang, Zheng; Hewak, Daniel

    2015-01-01

    Graphene, one of the most important two dimensional (2D) materials, has been attracting increasing interest and new applications in nano-scale electronic and photonic applications. The zero bandgap of graphene, however, has restricted its use in some optoelectronic applications. Recently, transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become a noteworthy complimentary material to graphene sharing many of its properties [1]. They may however offer properties t...

  8. Lead Chalcogenide Quantum Dots and Quantum Dot Hybrids for Optoelectronic Devices

    OpenAIRE

    Schornbaum, Julia

    2015-01-01

    Semiconductor quantum dots (QDs) exhibit remarkable properties, which include a size-tunable band gap and narrow emission bands. They are also suitable for large-area and low-cost fabrication, due to their solution-processability. Consequently, QDs are very promising for future applications in printable optoelectronic devices. Near-infrared (NIR) active lead chalcogenide QDs hold an enormous potential, as they exhibit optical properties in a wavelength regime, where efficient photoactive mate...

  9. ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

    Energy Technology Data Exchange (ETDEWEB)

    Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2014-12-15

    Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

  10. Functionalization of Amorphous Chalcogenide and Titanium Oxide Layers by Gold Nanoparticles

    OpenAIRE

    Kökényesi Sándor (1946-) (fizikus); Biri Sándor; Hegedűs Csaba (1953-) (fogszakorvos); Csarnovics István (1986-) (fizikus); Csik Attila

    2014-01-01

    The technology problems of fabricating different, nanometers sized gold particles in the layered composites like light-sensitive chalcogenide glass/gold nanoparticles/transparent substrate or titanium/titanium oxide/gold nanoparticles were investigated in our work. Combination of ion implantation, plasma deposition with annealing processes results physical routes for creation of gold nanoparticles in the mentioned structures, which possess plasmon effects. These functionalized structures are ...

  11. Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

    OpenAIRE

    Yi Li; Yingpeng Zhong; Jinjian Zhang; Lei Xu; Qing Wang; Huajun Sun; Hao Tong; Xiaoming Cheng; Xiangshui Miao

    2014-01-01

    Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the act...

  12. Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

    OpenAIRE

    P. Bia; Di Tommaso, A; De Sario, M.

    2012-01-01

    An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable...

  13. Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

    OpenAIRE

    Hughes, MA; Curry, RJ; Hewak, DW

    2011-01-01

    Vanadium doped chalcogenide glass has potential as an active gain medium, particularly at telecommunications wavelengths. This dopant has three spin allowed absorption transitions at 1100, 737 and 578 nm, and a spin forbidden absorption transition at 1000 nm. X-ray photo electron spectroscopy indicated the presence of vanadium in a range of oxidation states from V+ to V5+. Excitation of each absorption band resulted in the same characteristic emission spectrum and lifetime, indicating that on...

  14. Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

    2015-05-15

    Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

  15. Template-directed assembly of metal-chalcogenide nanocrystals into ordered mesoporous networks.

    Energy Technology Data Exchange (ETDEWEB)

    Vamvasakis, Ioannis; Subrahmanyam, Kota S.; Kanatzidis, Mercouri G.; Armatas, Gerasimos S.

    2015-04-01

    Although great progress in the synthesis of porous networks of metal and metal oxide nanoparticles with highly accessible pore surface and ordered mesoscale pores has been achieved, synthesis of assembled 3D mesostructures of metal-chalcogenide nanocrystals is still challenging. In this work we demonstrate that ordered mesoporous networks, which comprise well-defined interconnected metal sulfide nanocrystals, can be prepared through a polymer-templated oxidative polymerization process. The resulting self-assembled mesostructures that were obtained after solvent extraction of the polymer template impart the unique combination of light-emitting metal chalcogenide nanocrystals, three-dimensional open-pore structure, high surface area, and uniform pores. We show that the pore surface of these materials is active and accessible to incoming molecules, exhibiting high photocatalytic activity and stability, for instance, in oxidation of 1-phenylethanol into acetophenone. We demonstrate through appropriate selection of the synthetic components that this method is general to prepare ordered mesoporous materials from metal chalcogenide nanocrystals with various sizes and compositions.

  16. Synthesis and characterization of single-source molecular precursors for the preparation of metal chalcogenides

    Indian Academy of Sciences (India)

    Vimal K Jain

    2006-11-01

    Metal chalcogenides constitute an important family of functional materials. Subtle changes in shape, size and phase of these materials result in variations in physical properties (e.g. electronic and optical), which can be exploited for various technological applications. Several strategies have evolved recently for controlling shape, size and phase of these materials. This work discusses design and synthesis of single-source molecular precursors for the preparation of metal chalcogenides both in bulk and nano-size regime. Precursors for palladium chalcogenides, indium sulphides and II-VI materials are presented. Synthesis of a variety of palladium(II)/platinum(II) complexes with internally functionalised chalcogenolate ligands, selenocarboxylates; gallium and indium dithiolate complexes and zinc/cadmium/mercury complexes with N,N'-dimethylaminoalkylselenolate ligands and their characterization by NMR and X-ray crystallography are also discussed. Data on thermal behaviour of a few representative complexes, [Pd(SeCOAr)2(PR3)2], [PdCl(E∩N)(PR3)], [InMe2(S∩S)], [In(S∩S)3] and [M(E(CH2)NMe2)2] (M = Zn, Cd, Hg; = 2 or 3) are presented.

  17. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    Science.gov (United States)

    Virk, Naunidh; Yazyev, Oleg V.

    2016-02-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures.

  18. Chemical Control of Plasmons in Metal Chalcogenide and Metal Oxide Nanostructures.

    Science.gov (United States)

    Mattox, Tracy M; Ye, Xingchen; Manthiram, Karthish; Schuck, P James; Alivisatos, A Paul; Urban, Jeffrey J

    2015-10-14

    The field of plasmonics has grown to impact a diverse set of scientific disciplines ranging from quantum optics and photovoltaics to metamaterials and medicine. Plasmonics research has traditionally focused on noble metals; however, any material with a sufficiently high carrier density can support surface plasmon modes. Recently, researchers have made great gains in the synthetic (both intrinsic and extrinsic) control over the morphology and doping of nanoscale oxides, pnictides, sulfides, and selenides. These synthetic advances have, collectively, blossomed into a new, emerging class of plasmonic metal chalcogenides that complement traditional metallic materials. Chalcogenide and oxide nanostructures expand plasmonic properties into new spectral domains and also provide a rich suite of chemical controls available to manipulate plasmons, such as particle doping, shape, and composition. New opportunities in plasmonic chalcogenide nanomaterials are highlighted in this article, showing how they may be used to fundamentally tune the interaction and localization of electromagnetic fields on semiconductor surfaces in a way that enables new horizons in basic research and energy-relevant applications.

  19. Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

    Science.gov (United States)

    Li, Chao-Ran; Dai, Shi-Xun; Zhang, Qing-Yuan; Shen, Xiang; Wang, Xun-Si; Zhang, Pei-Qing; Lu, Lai-Wei; Wu, Yue-Hao; Lv, She-Qin

    2015-04-01

    We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q (˜ 6×104) laser mode could be obtained from a 75-μm diameter microsphere that is coupled with a 1.77-μm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser. Project supported by the National Natural Science Foundation of China (Grant Nos. 61177087 and 61435009), the National Key Basic Research Program of China (Grant No. 2012CB722703), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B21007) , the K. C. Wong Magna Fund in Ningbo University, the Open Fund of the State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), China (Grant No. 2014-skllmd-01), and the Natural Science Foundation of Ningbo City, China (Grant No. 2014A610125).

  20. Shaping of Looped Miniaturized Chalcogenide Fiber Sensing Heads for Mid-Infrared Sensing

    Directory of Open Access Journals (Sweden)

    Patrick Houizot

    2014-09-01

    Full Text Available Chalcogenide glass fibers are promising photonic tools to develop Fiber Evanescent Wave Spectroscopy (FEWS optical sensors working in the mid-infrared region. Numerous pioneering works have already been carried out showing their efficiency, especially for bio-medical applications. Nevertheless, this technology remains confined to academic studies at the laboratory scale because chalcogenide glass fibers are difficult to shape to produce reliable, sensitive and compact sensors. In this paper, a new method for designing and fabricating a compact and robust sensing head with a selenide glass fiber is described. Compact looped sensing heads with diameter equal to 2 mm were thus shaped. This represents an outstanding achievement considering the brittleness of such uncoated fibers. FEWS experiments were implemented using alcoholic solutions as target samples showing that the sensitivity is higher than with the routinely used classical fiber. It is also shown that the best compromise in term of sensitivity is to fabricate a sensing head including two full loops. From a mechanical point of view, the breaking loads of the loop shaped head are also much higher than with classical fiber. Finally, this achievement paves the way for the use of mid-infrared technology during in situ and even in vivo medical operations. Indeed, is is now possible to slide a chalcogenide glass fiber in the operating channel of a standard 2.8 mm diameter catheter.

  1. Shaping of looped miniaturized chalcogenide fiber sensing heads for mid-infrared sensing.

    Science.gov (United States)

    Houizot, Patrick; Anne, Marie-Laure; Boussard-Plédel, Catherine; Loréal, Olivier; Tariel, Hugues; Lucas, Jacques; Bureau, Bruno

    2014-01-01

    Chalcogenide glass fibers are promising photonic tools to develop Fiber Evanescent Wave Spectroscopy (FEWS) optical sensors working in the mid-infrared region. Numerous pioneering works have already been carried out showing their efficiency, especially for bio-medical applications. Nevertheless, this technology remains confined to academic studies at the laboratory scale because chalcogenide glass fibers are difficult to shape to produce reliable, sensitive and compact sensors. In this paper, a new method for designing and fabricating a compact and robust sensing head with a selenide glass fiber is described. Compact looped sensing heads with diameter equal to 2 mm were thus shaped. This represents an outstanding achievement considering the brittleness of such uncoated fibers. FEWS experiments were implemented using alcoholic solutions as target samples showing that the sensitivity is higher than with the routinely used classical fiber. It is also shown that the best compromise in term of sensitivity is to fabricate a sensing head including two full loops. From a mechanical point of view, the breaking loads of the loop shaped head are also much higher than with classical fiber. Finally, this achievement paves the way for the use of mid-infrared technology during in situ and even in vivo medical operations. Indeed, is is now possible to slide a chalcogenide glass fiber in the operating channel of a standard 2.8 mm diameter catheter. PMID:25264953

  2. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    Science.gov (United States)

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-01-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2). PMID:26931353

  3. Efficient and broadband optical parametric four wave mixing in chalcogenide-PMMA hybrid microwires

    CERN Document Server

    Ahmad, Raja

    2012-01-01

    The recent development of devices based on novel nonlinear materials like chalcogenides (ChGs), silicon (Si) and other semi-conductors has revolutionized the field of nonlinear photonics [1,2,3]. Among the nonlinear effects observed in these materials, four-wave mixing (FWM) is the process that finds the most applications including wavelength conversion [4], optical regeneration [5,6], optical delay [7], time-domain demultiplexing[8], temporal cloaking[9] and negative refraction[10]. Although FWM has been observed in several media including chalcogenides [11,12,13,14], silicon[15, 16], bismuth [17] and silica [18,19], there is a continued quest for devices that realize efficient and broadband FWM while offering compactness, low-power consumption and compatibility with optical fibers. Here, we demonstrate the fabrication of 10 cm long polymer cladded chalcogenide (As2Se3) microwires to realize FWM-led sub watt threshold (70-370 mW) wavelength conversion with a 12 dB bandwidth as broad as 190 nm, and conversion...

  4. Fabrication and characterization of multimaterial chalcogenide glass fiber tapers with high numerical apertures.

    Science.gov (United States)

    Sun, Ya'nan; Dai, Shixun; Zhang, Peiqing; Wang, Xunsi; Xu, Yinsheng; Liu, Zijun; Chen, Feifei; Wu, Yuehao; Zhang, Yuji; Wang, Rongping; Tao, Guangming

    2015-09-01

    This paper reports on the fabrication and characterization of multimaterial chalcogenide fiber tapers that have high numerical apertures (NAs). We first fabricated multimaterial As(2)Se(3)-As(2)S(3) chalcogenide fiber preforms via a modified one-step coextrusion process. The preforms were drawn into multi- and single-mode fibers with high NAs (≈1.45), whose core/cladding diameters were 103/207 and 11/246 μm, respectively. The outer diameter of the fiber was tapered from a few hundred microns to approximately two microns through a self-developed automatic tapering process. Simulation results showed that the zero-dispersion wavelengths (ZDWs) of the tapers were shorter than 2 μm, indicating that the tapers can be conveniently pumped by commercial short wavelength infrared lasers. We also experimentally demonstrated the supercontinuum generation (SCG) in a 15-cm-long multimaterial As(2)Se(3)-As(2)S(3) chalcogenide taper with 1.9 μm core diameter and the ZDW was shifted to 3.3 μm. When pumping the taper with 100 fs short pulses at 3.4 µm, a 20 dB spectral of the generated supercontinuum spans from 1.5 μm to longer than 4.8 μm. PMID:26368447

  5. Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

    Energy Technology Data Exchange (ETDEWEB)

    Charnovych, S., E-mail: csari86@gmail.com [Department of Experimental Physics, University of Debrecen, Bem sq. 18/a, 4026 Debrecen (Hungary); Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France); Csik, A. [Institute of Nuclear Research of Hungarian Academy of Sciences (ATOMKI), P.O. Box 51, H-4001 Debrecen (Hungary); Allix, M.; Matzen, G. [CEMHTI-CNRS, Site Haute Temperature, Orleans (France); Kokenyesi, S. [Department of Experimental Physics, University of Debrecen, Bem sq. 18/a, 4026 Debrecen (Hungary)

    2011-11-01

    Highlights: {yields} Amorphous chalcogenides were investigated in this work. {yields} Photo-induced effects were investigated in the created thin films. {yields} Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As{sub 20}Se{sub 80}/alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As{sub 20}Se{sub 80} film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

  6. Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

    International Nuclear Information System (INIS)

    Highlights: → Amorphous chalcogenides were investigated in this work. → Photo-induced effects were investigated in the created thin films. → Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As20Se80/alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As20Se80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

  7. Inorganic Thin-film Sensor Membranes with PLD-prepared Chalcogenide Glasses: Challenges and Implementation

    Directory of Open Access Journals (Sweden)

    Michael J. Schöning

    2004-10-01

    Full Text Available Abstract: Chalcogenide glasses offer an excellent “challenge” for their use and implementation in sensor arrays due to their good sensor-specific advantages in comparison to their crystalline counterparts. This paper will give an introduction on the preparation of chalcogenide glasses in the thin-film state. First, single microsensors have been prepared with the methods of semiconductor technology. In a next step, three microsensors are implemented onto one single silicon substrate to an “one chip” sensor array. Different ionselective chalcogenide glass membranes (PbSAgIAs2S3, CdSAgIAs2S3, CuAgAsSeTe and TlAgAsIS were prepared by means of the pulsed laser deposition (PLD process. The different sensor membranes and structures have been physically characterized by means of Rutherford backscattering spectrometry, scanning electron microscopy and video microscopy. The electrochemical behavior has been investigated by potentiometric measurements.

  8. Non-oxido divanadium(IV) and divanadium(V) thiolate complexes with a new type of chalcogenide bridging motif.

    Science.gov (United States)

    Wu, Hong-Ming; Chang, Ya-Ho; Tsai, Yi-Fang; Hsu, Kuei-Fang; Lee, Gene-Hsiang; Hsu, Hua-Fen

    2015-03-14

    In our effort to study vanadium chalcogenide chemistry, we have synthesized and characterized a class of non-oxido divanadium(IV) and divanadium(V) complexes with chalcogenide and dichalcogenide as bridges. All structures consist of a similar divanadium motif, in which two metal centers are bridged by one μ-chalcogenide and one μ-η(2):η(2)-dichalcogenide, forming a V2(μ-E)(μ-η(2):η(2)-E2) (E = S or Se) core structure. These compounds are [V(IV)2(PS3)2(μ-Se2)(μ-Se)][PPh4]2 (1), [V(V)2(PS3'')2(μ-Se2)(μ-Se)] (2), [V(V)2(PS3'')2(μ-S2)(μ-S)] (3a) and [V(V)2(PS3)2(μ-S2)(μ-S)] (3b) ([PS3](3-) = P(C6H4-2-S)3 and [PS3''](3-) = P(C6H3-3-SiMe3-2-S)3). Compound 1 exhibits diamagnetic behavior, indicating strong antiferromagnetic coupling between two d(1) centers. Compounds 2 and 3a-b have the highest oxidation states for vanadium ions (+5/+5) among those reported divanadium chalcogenide clusters. The work demonstrates that high-valent divanadium chalcogenide clusters can be obtained with the activation of elemental chalcogens by low-valent vanadium ions. PMID:25645817

  9. Novel methanol-tolerant Ir-S/C chalcogenide electrocatalysts for oxygen reduction in DMFC fuel cell

    Institute of Scientific and Technical Information of China (English)

    Jingyu Ma; Desheng Ai; Xiaofeng Xie; Jianwei Guo

    2011-01-01

    Novel methanol-tolerant oxygen-reduction catalysts, iridium-sulphur (Ir-S) chalcogenides with differ ent Ir/S atomic ratios, were synthesized via a precipitation method using H21rCI6 and Na2SO3 as the Ir and S precursors. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the IrxSl-x/C chalcogenide catalysts. Particle size ranging from 2.5 to 2.8 nm though obvious agglomeration was found on carbon support. However, these chalcogenide catalysts showed strong catalytic activity towards the oxygen reduction reaction (ORR) and high methanol tolerance, strongly suggesting these novel catalysts as promising candidates for direct methanol fuel cell (DMFC) cathode applications.

  10. Visible Light Generation and Its Influence on Supercontinuum in Chalcogenide As2S3 Microstructured Optical Fiber

    Science.gov (United States)

    Gao, Weiqing; Liao, Meisong; Yan, Xin; Kito, Chihiro; Kohoutek, Tomas; Suzuki, Takenobu; El-Amraoui, Mohammed; Jules, Jean-Charles; Gadret, Grégory; Désévédavy, Frédéric; Smektala, Frédéric; Ohishi, Yasutake

    2011-10-01

    We demonstrate visible light generation in chalcogenide As2S3 microstructured optical fiber. The generated visible light causes irreversible damage to the fiber core because of the high absorption coefficient of chalcogenide glasses in the visible band. The SCs (supercontinua) are measured in both untapered and tapered As2S3 fibers, no wider SC is obtained in the tapered one. The SC growth is prevented by the visible light generation since the damage to the fiber core decreases the fiber transmission substantially. This effect can be avoided by designing the fiber to enable the pump source to work in single-mode operation.

  11. Compositional trends of γ-induced optical changes observed in chalcogenide glasses of binary As-S system

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M.; Shpotyuk, O.; Golovchak, Roman; McCloy, John S.; Riley, Brian J.

    2014-01-23

    Compositional trends of γ-induced optical changes in chalcogenide glasses are studied with the binary As-S system. Effects of γ-irradiation and annealing are compared using the changes measured in the fundamental optical absorption edge region. It is shown that annealing near the glass transition temperature leads to bleaching of As-S glasses, while γ-irradiation leads to darkening; both depend on the glass composition and thermal history of the specimens. These results are explained in terms of competitive destruction–polymerization transformations and physical aging occurring in As-S chalcogenide glasses under the influence of γ-irradiation.

  12. Robust multimaterial tellurium-based chalcogenide glass fibers for mid-wave and long-wave infrared transmission.

    Science.gov (United States)

    Tao, Guangming; Shabahang, Soroush; Ren, He; Khalilzadeh-Rezaie, Farnood; Peale, Robert E; Yang, Zhiyong; Wang, Xunsi; Abouraddy, Ayman F

    2014-07-01

    We describe an approach for producing robust multimaterial chalcogenide glass fibers for mid-wave and long-wave mid-infrared transmission. By combining the traditional rod-in-tube process with multimaterial coextrusion, we prepare a hybrid glass-polymer preform that is drawn continuously into a robust step-index fiber with a built-in, thermally compatible polymer jacket. Using tellurium-based chalcogenides, the fibers have a transparency window covering the 3-12 μm spectral range, making them particularly attractive for delivering quantum cascade laser light and in space applications. PMID:24978794

  13. High thermoelectric figure of merit nanostructured pnictogen chalcogenides by bottom-up synthesis and assembly

    Science.gov (United States)

    Mehta, Rutvik J.

    Thermoelectric materials offer promise for realizing transformative environmentallyfriendly solid-state refrigeration technologies that could replace current technologies based on ozone-depleting liquid coolants. The fruition of this vision requires factorial enhancements in the figure of merit (ZT) of thermoelectric materials, necessitating high Seebeck coefficient (alpha), high electrical conductivity (sigma) and low thermal conductivity (kappa). This thesis reports a novel bottom-up approach to scalably sculpt large quantities (>10g/minute) of V 2VI3 nanocrystals with controllable shapes and sizes, and assemble them into bulk samples to obtain both high power factors alpha 2sigma as well as unprecedentedly low kappa through tunable doping and nanostructuring. The thesis demonstrates a surfactant-mediated microwave-solvothermal synthesis technique that selectively yields both n- and p-typed pnictogen chalcogenide (Bi2Te3, Sb2Te3, Bi2Se3) nanoplates and, nanowires and nanotubes (Sb 2Se3) that can be sintered to obtain 25-250 % increases in ZT>1 compared to their non-nanostructured and un-doped counterparts. A key result is that nanostructuring diminishes the lattice thermal conductivity kappa L to ultra-low values of 0.2-0.5 Wm-1K-1. Sub-atomic-percent sulfur doping and sulfurization of the pnictogen chalcogenides induced through mercaptan-terminated organic surfactants used in the synthesis result in large Seebeck coefficients between -240 nanocomposites by mixing nanoplates of different materials (e.g., S-doped Sb2Te3 and S-doped Bi2Te3) and forming heterostructures of metals and chalcogenides. The thesis finally demonstrates the extendibility of the novel synthesis and assembly approach to tailor the thermoelectric properties of other non-traditional thermoelectric materials systems.

  14. Optical property tuning of bismuth chalcogenides using chemical intercalation (Presentation Recording)

    Science.gov (United States)

    Yao, Jie

    2015-10-01

    Two-dimensional (2D) materials with natural layer structures have been proven to provide extraordinary physical and chemical properties. Bismuth chalcogenides are examples of such two-dimensional materials. They are strongly bonded within layers and weak van der Waals interaction ties those layers together. Such naturally layered structure allows chemical intercalation of foreign atoms into the van der Waals gaps. Here, we show that by adding large number of copper atoms into van der Waals gaps of bismuth chalcogenides, we observed counter-intuitive enhancement of optical transparency together with improved electrical conductivity, which is on the contrary to most bulk materials in which doping reduces the light transmission. This surprising behavior is caused by substantial tuning of material optical property and nanophotonic anti-reflection effect unique to ultra-thin nanoplates. With the intercalation of copper atoms, large number of electrons have been added into the semiconducting material system and effectively lift the Fermi level of the resulting material to its conduction band, as proved by our densityfunctional- theory computations. Occupied lower states in the conduction band do not allow the optical excitation of electrons in the valence band to the bottom of the conduction band, leading to an effective widening of optical band gap. Optical transmission is further enhanced by constructive interference of reflected beams as bismuth chalcogenides have large permittivity than the environment. The synergy of these two effects in two-dimensional nanostructures can be exploited for various optoelectronic applications including transparent electrode. The reversible intercalation process allows potential dynamic tuning capability.

  15. Iron based pnictide and chalcogenide superconductors studied by muon spin spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shermadini, Zurab

    2014-07-15

    In the present thesis the superconducting properties of the Iron-based Ba{sub 1-x}Rb{sub x}Fe{sub 2}As{sub 2} arsenides, and A{sub x}Fe{sub 2-y}Se{sub 2} (A=Cs,Rb,K) chalcogenides are investigated by means of Muon Spin Rotation Spectroscopy. The temperature and pressure dependence of the magnetic penetration depth is obtained form μSR experiments and analyzed to probe the superconducting gap-symmetries for each samples. The Ba{sub 1-x}Rb{sub x}Fe{sub 2}As{sub 2} system is described within the multi-gap s+s-wave scenario and results are discussed in the light of the suppression of inter-band processes upon hole doping. Due to the lowered upper critical field B{sub c2} and reduced T{sub c}, a large section of B-T-p phase diagram is studied for the hole-overdoped x=1 case. By applying hydrostatic pressure, the RbFe{sub 2}As{sub 2} system exhibits a classical BCS superconducting characteristics. The A{sub x}Fe{sub 2-y}Se{sub 2} chalcogenide represents a system containing magnetically ordered and superconducting phases simultaneously. In all investigated chalcogenide samples, about 90% of the total volume show the strong antiferromagnetic phase and 10% exhibit a paramagnetic behavior. Magnetization measurements reveal a 100% Meissner effect, while μSR clearly indicates that the paramagnetic phase is a perfect superconductor. Up to now, there is no clear evidence whether the antiferromagnetic phase is also superconducting. The microscopic coexistence and/or phase separation of superconductivity and magnetism is discussed. Moreover, a new hydrostatic double-wall pressure cell is developed and produced, satisfying the demands of μSR experiments. The designs and characteristics of the new pressure cell are reviewed in the present thesis.

  16. Solution based approach for the fabrication of photonic devices in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Prince,, E-mail: princevish2@gmail.com; Raman, Swati [Dept. Of Physics, Jamia Millia Islamia, New Delhi-110025 (India); Dwivedi, Prabhat K. [Center for Nanoscience, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Zulfequar, M. [Dept. Of Physics, Jamia Millia Islamia, New Delhi-110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi-110025 (India); Husain, M.

    2015-06-24

    In this report, we describe the solution preparation conditions of various chalcogenide glasses. The dissolution mechanism of (As{sub 2}S{sub 3}){sub 60}Ge{sub 40}, (As{sub 2}S{sub 3}){sub 60}Se{sub 40} in ethanolamine is studied. Dynamic light scattering (DLS)measurements confirms that the particles in suspension are <10 nm in all the solutions.Prepared solutions are shown to possess similar molecular structure to the parent bulk glasses. Optical properties of the prepared solution are also discussed.

  17. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

    Institute of Scientific and Technical Information of China (English)

    LIU Bo; FENG Gao-Ming; WU Liang-Cai; SONG Zhi-Tang; LIU Qi-Bin; FENG Song-Lin; CHEN Bomy

    2007-01-01

    @@ In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.

  18. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method

    Institute of Scientific and Technical Information of China (English)

    LIU Bo; SONG Zhi-Tang; FENG Song-Lin; CHEN Bomy

    2004-01-01

    A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2 Te5 phase change film and the top electrode film is about 600nm (diameter) and the contact area is calculated to be 0.28pm2. The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory. The minimum threshold current of about 0.6mA is obtained.

  19. Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides

    OpenAIRE

    Yan, Binghai; Liu, Chao-Xing; Zhang, Hai-Jun; Yam, Chi-Yung; Qi, Xiao-Liang; Frauenheim, Thomas; Zhang, Shou-Cheng

    2010-01-01

    We predict a new class of three dimensional topological insulators in thallium-based III-V-VI$_2$ ternary chalcogenides, including TlBiQ$_2$ and TlSbQ$_2$ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the $\\Gamma$ point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe...

  20. Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

    International Nuclear Information System (INIS)

    A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge15.8As21S63.2 glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition

  1. Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

    International Nuclear Information System (INIS)

    New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As2S3)100-x(Sb2S3)x ChG.

  2. Ageing effects in As10Se90 chalcogenide glasses induced by gamma-irradiation

    International Nuclear Information System (INIS)

    The peculiarities of gamma-induced (Co60source, 1.85 MGy absorbed dose) ageing phenomena in As10Se90 chalcogenide glasses are investigated for the first time. The analogy between the observed radiation-induced ageing and the thermally induced one in vitreous selenium is emphasized. Like to thermal treatment, gamma-irradiation leads to an increase in the glass transition temperature and the relaxation rate towards a thermodynamic equilibrium of supercooled liquid, the value of this increase being greater in the case of radiation influence

  3. Synthesis, phase stability, structural and physical properties of 11-type iron chalcogenides

    OpenAIRE

    Rößler, Sahana; Koz, Cevriye; Wirth, Steffen; Schwarz, Ulrich

    2016-01-01

    This article reviews recent experimental investigations on two binary Fe-chalcogenides: FeSe and Fe$_{1+y}$Te. The main focus is on synthesis, single crystal growth, chemical composition, as well as on the effect of excess iron on structural, magnetic, and transport properties of these materials. The structurally simplest Fe-based superconductor Fe$_{1+x}$Se with a critical temperature $T_c \\approx$ 8.5 K undergoes a tetragonal to orthorhombic phase transition at a temperature $T_s \\approx$ 8...

  4. Octave-spanning infrared supercontinuum generation in robust chalcogenide nanotapers using picosecond pulses.

    Science.gov (United States)

    Shabahang, Soroush; Marquez, Michael P; Tao, Guangming; Piracha, Mohammad U; Nguyen, Dat; Delfyett, Peter J; Abouraddy, Ayman F

    2012-11-15

    We report on infrared supercontinuum generation extending over more than one octave of bandwidth, from 850 nm to 2.35 μm, produced in a single spatial mode from a robust, compact, composite chalcogenide glass nanotaper. A picosecond laser at 1.55 μm pumps a high-index-contrast, all-solid nanotaper that strongly confines the field to a 480 nm diameter core, while a thermally compatible built-in polymer jacket lends the nanotaper mechanical stability. PMID:23164864

  5. Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O, E-mail: shpotyukmy@yahoo.com [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 212, Stryjska str., Lviv, 79031 (Ukraine)

    2011-04-01

    New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As{sub 2}S{sub 3}){sub 100-x}(Sb{sub 2}S{sub 3}){sub x} ChG.

  6. Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

    2007-03-15

    Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Radiation-induced defects formation in Bi-containing vitreous chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

    1997-12-01

    Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

  8. Application of positron annihilation lifetime technique for {gamma}-irradiation stresses study in chalcogenide vitreous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.; Golovchak, R.; Kovalskiy, A. [Scientific Research Company ' ' Carat' ' , Stryjska str. 20279031 Lviv (Ukraine); Filipecki, J.; Hyla, M. [Physics Institute, Pedagogical University, Al. Armii Krajowej 13/1542201 Czestochowa (Poland)

    2002-08-01

    The influence of {gamma}-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and {gamma}-induced open volume defects. It is concluded that after {gamma}-irradiation of investigated materials the {gamma}-induced microvoids based on S{sub 1}{sup -}, As{sub 2}{sup -}, and Ge{sub 3}{sup -} coordination defects play the major role in positron annihilation processes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  9. Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

    2007-04-15

    A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

  10. Chalcogenide glass Photonic Crystal Fiber with flattened dispersion and high nonlinearity at telecommunication wavelength

    OpenAIRE

    Revathi, S.; ABHIJITH CHANDRAN; Amir, A; SRINIVASA RAO INBATHINI

    2013-01-01

    A highly nonlinear photonic crystal fiber with eight ring octagonal structure is proposed. Chalcogenide glass of As2S3 is used as the material for this photonic crystal fiber structure. The finiteelementmethod with perfectly matched boundary layer is employed to analyze the guiding properties. Non linearity of 13,584.5 per W-km is obtained at 1.55 μm with reasonable flattened dispersion of -25ps/nm-km to -28 ps/nm-km. Confinement loss achieved is of the order of 10-6 dB/km. Large negative di...

  11. Optical properties of chalcogenide glassy semiconductor Se95Te5 doped by samarium

    International Nuclear Information System (INIS)

    The optical width of forbidden band, refraction index and extinction index are defined by investigation of optical transmission spectrum of chalcogenide glassy semiconductor Se95Te5 doped by samarium Eo is oscillator energy connected with energy gap and Ed is dispersion energy characterizing the interband transition force are defined within the framework of one-oscillator model. The influence of samarium impurity on optical and dispersion parameters can be connected with peculiarity of impurity atom distribution, changes of chemical band and coordination number

  12. Observation of nonlinear thermal optical dynamics in a chalcogenide nanobeam cavity

    CERN Document Server

    Sun, Yue; Choi, Duk-Yong; Sukhorukov, Andrey A

    2016-01-01

    We present a theoretical and experimental analysis of nonlinear thermo-optic effects in suspended chalcogenide glass nanobeam cavities. We measure the power dependent resonance peaks and characterise the dynamic nonlinear thermo-optic response of the cavity under modulated light input. Several distinct nonlinear characteristics are identified, including a modified spectral response containing periodic fringes, a critical wavelength jump and saturated time delay for modulation frequency faster than the thermal characteristic time. We reveal that the coupling to a parasitic Fabry-Perot cavity enables isolated thermal equilibrium states resulting in the discontinuous thermo-optic critical point.

  13. Structural and Substructural Properties of the Zinc and Cadmium Chalcogenides Thin Films (a Review

    Directory of Open Access Journals (Sweden)

    C.J. Panchal

    2011-01-01

    Full Text Available In this paper, the structural properties of the zinc and cadmium chalcogenide thin films are considered. The influence of the structural defects such as grain boundaries, dislocations, native point defects, etc., on the optical and electrical properties of the thin films was studied. The methods of the II-VI thin films deposition are described. The influence on the sub-structural properties (phase compositions, texture, grain size, stacking faults concentration, micro deformation levels, and coherent domain size of the thin films grown by the close-spaced vacuum evaporation method was analyzed. The growth conditions of the thin films with optimized parameters have been determined.

  14. Power-efficient production of photon pairs in a tapered chalcogenide microwire

    CERN Document Server

    Meyer-Scott, Evan; Ahmad, Raja; Li, Lizhu; Rochette, Martin; Jennewein, Thomas

    2015-01-01

    Using tapered fibers of As2Se3 chalcogenide glass, we produce photon pairs at telecommunication wavelengths with pump power as low as 250 nW for a single pump, and 191 nW for the weak pump in a two-pump non-degenerate scheme. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

  15. Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pavlista, Martin; Hrdlicka, Martin; Prikryl, Jan [University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic); Nemec, Petr; Frumar, Miloslav [University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic); University of Pardubice, Department of General and Inorganic Chemistry, Faculty of Chemical Technology, Pardubice (Czech Republic)

    2008-11-15

    Amorphous chalcogenide thin films were prepared from As{sub 2}Se{sub 3}, As{sub 3}Se{sub 2} and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data. (orig.)

  16. An automatic method for atom identification in scanning tunnelling microscopy images of Fe-chalcogenide superconductors.

    Science.gov (United States)

    Perasso, A; Toraci, C; Massone, A M; Piana, M; Gerbi, A; Buzio, R; Kawale, S; Bellingeri, E; Ferdeghini, C

    2015-12-01

    We describe a computational approach for the automatic recognition and classification of atomic species in scanning tunnelling microscopy images. The approach is based on a pipeline of image processing methods in which the classification step is performed by means of a Fuzzy Clustering algorithm. As a representative example, we use the computational tool to characterize the nanoscale phase separation in thin films of the Fe-chalcogenide superconductor FeSex Te1-x , starting from synthetic data sets and experimental topographies. We quantify the stoichiometry fluctuations on length scales from tens to a few nanometres. PMID:26291960

  17. Enhancing light emission efficiency without color change in post-transition metal chalcogenides

    Science.gov (United States)

    Wang, Cong; Yang, Shengxue; Cai, Hui; Ataca, Can; Chen, Hui; Zhang, Xinzheng; Xu, Jingjun; Chen, Bin; Wu, Kedi; Zhang, Haoran; Liu, Luqi; Li, Jingbo; Grossman, Jeffrey C.; Tongay, Sefaattin; Liu, Qian

    2016-03-01

    Two-dimensional (2D) materials can take a large amount of mechanical deformation before reaching the fracture limit due to their high Young's modulus, and this in return, provides a way to tune the properties of 2D materials by strain engineering. Previous works have shown that the optical band gap of transition metal chalcogenides (TMDs) can be modulated by strain, resulting in a drift of the photoluminescence (PL) peak position and a decrease (or little change) in PL intensity. Here, we report a member of the post-transition metal chalcogenides (PTMCs), 2D-GaSe sheets, displaying vastly different phenomena under strain. Strained 2D-GaSe emits photons at almost the same wavelength as unstrained material but appears an order of magnitude brighter. In contrast to TMDs, optical spectroscopy measurements reveal that changes in the optical properties are mostly related to the colossal optical absorption anisotropy of GaSe, instead of commonly accepted strain-induced band renormalization. Results suggest that the light-matter interaction and the optical properties of 2D-GaSe can be controlled at will by manipulating the optical absorption.Two-dimensional (2D) materials can take a large amount of mechanical deformation before reaching the fracture limit due to their high Young's modulus, and this in return, provides a way to tune the properties of 2D materials by strain engineering. Previous works have shown that the optical band gap of transition metal chalcogenides (TMDs) can be modulated by strain, resulting in a drift of the photoluminescence (PL) peak position and a decrease (or little change) in PL intensity. Here, we report a member of the post-transition metal chalcogenides (PTMCs), 2D-GaSe sheets, displaying vastly different phenomena under strain. Strained 2D-GaSe emits photons at almost the same wavelength as unstrained material but appears an order of magnitude brighter. In contrast to TMDs, optical spectroscopy measurements reveal that changes in the optical

  18. Photoinduced effects in amorphous semiconductor Ge(S, Se)2 chalcogenide films

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S, Se)2 chalcogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystallization was also observed in amorphous Ge(S,Se)2 films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)2 films could be applied to designing some new kinds of optical storage materials.

  19. Crystal symmetry breaking and vacancies in colloidal lead chalcogenide quantum dots.

    Science.gov (United States)

    Bertolotti, Federica; Dirin, Dmitry N; Ibáñez, Maria; Krumeich, Frank; Cervellino, Antonio; Frison, Ruggero; Voznyy, Oleksandr; Sargent, Edward H; Kovalenko, Maksym V; Guagliardi, Antonietta; Masciocchi, Norberto

    2016-09-01

    Size and shape tunability and low-cost solution processability make colloidal lead chalcogenide quantum dots (QDs) an emerging class of building blocks for innovative photovoltaic, thermoelectric and optoelectronic devices. Lead chalcogenide QDs are known to crystallize in the rock-salt structure, although with very different atomic order and stoichiometry in the core and surface regions; however, there exists no convincing prior identification of how extreme downsizing and surface-induced ligand effects influence structural distortion. Using forefront X-ray scattering techniques and density functional theory calculations, here we have identified that, at sizes below 8 nm, PbS and PbSe QDs undergo a lattice distortion with displacement of the Pb sublattice, driven by ligand-induced tensile strain. The resulting permanent electric dipoles may have implications on the oriented attachment of these QDs. Evidence is found for a Pb-deficient core and, in the as-synthesized QDs, for a rhombic dodecahedral shape with nonpolar {110} facets. On varying the nature of the surface ligands, differences in lattice strains are found. PMID:27295101

  20. Structural and electronic properties of high pressure phases of lead chalcogenides

    Science.gov (United States)

    Petersen, John; Scolfaro, Luisa; Myers, Thomas

    2012-10-01

    Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

  1. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

    Science.gov (United States)

    Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

    2016-05-11

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality. PMID:27049355

  2. Mid-gap phenomena in chalcogenide glasses and barrier-cluster-heating model

    Energy Technology Data Exchange (ETDEWEB)

    Banik, Ivan, E-mail: ivan.banik@stuba.sk; Kubliha, Marián; Lukovičová, Jozefa; Pavlendová, Gabriela [Faculty of Civil Engineering, Slovak University of Technology, 813 68 Bratislava (Slovakia)

    2015-12-07

    The physical mechanism of photoluminescence spectrum formation of chalcogenide glasses (CHG) belongs to the important unsolved problems in physics of non-crystalline materials. Photoluminescence is an important means of the electron spectrum investigation. PL spectrum in CHG is produced mostly in the middle of the band gap, and its profile is normal - Gaussian. Several features of PL spectra in CHG is still a great mystery. The aim of the paper is to make reader acquainted with the new insight into the problem. In this article we also deal with the issue of clarifying the nature of mid-gap absorption. From the experiments it is known that after excitation of the glass As{sub 2}S{sub 3} (or As{sub 2}Se{sub 3}) with primary radiation from Urbach-tail region the glass will be able to absorb the photons of low energy (IR) radiation from mid-gap region of spectra. This low photon absorption without action of the primary excitation radiation of the higher photon energy is impossible. Mid-gap absorption yields boost in the photoluminescence. The paper gives the reader the new insights into some, until now, unexplained effects and contexts in chalcogenide glasses from the position of barrier-cluster-heating model.

  3. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    Science.gov (United States)

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-11-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1-xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1-xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1-xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1-xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1-xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C-320 °C) on MgO using PLD. This offers a broad scope of various applications.

  4. Crystal symmetry breaking and vacancies in colloidal lead chalcogenide quantum dots

    Science.gov (United States)

    Bertolotti, Federica; Dirin, Dmitry N.; Ibáñez, Maria; Krumeich, Frank; Cervellino, Antonio; Frison, Ruggero; Voznyy, Oleksandr; Sargent, Edward H.; Kovalenko, Maksym V.; Guagliardi, Antonietta; Masciocchi, Norberto

    2016-09-01

    Size and shape tunability and low-cost solution processability make colloidal lead chalcogenide quantum dots (QDs) an emerging class of building blocks for innovative photovoltaic, thermoelectric and optoelectronic devices. Lead chalcogenide QDs are known to crystallize in the rock-salt structure, although with very different atomic order and stoichiometry in the core and surface regions; however, there exists no convincing prior identification of how extreme downsizing and surface-induced ligand effects influence structural distortion. Using forefront X-ray scattering techniques and density functional theory calculations, here we have identified that, at sizes below 8 nm, PbS and PbSe QDs undergo a lattice distortion with displacement of the Pb sublattice, driven by ligand-induced tensile strain. The resulting permanent electric dipoles may have implications on the oriented attachment of these QDs. Evidence is found for a Pb-deficient core and, in the as-synthesized QDs, for a rhombic dodecahedral shape with nonpolar {110} facets. On varying the nature of the surface ligands, differences in lattice strains are found.

  5. Photonic Bandgap Propagation in All-Solid Chalcogenide Microstructured Optical Fibers

    Directory of Open Access Journals (Sweden)

    Celine Caillaud

    2014-08-01

    Full Text Available An original way to obtain fibers with special chromatic dispersion and single-mode behavior is to consider microstructured optical fibers (MOFs. These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. In this study, the first all-solid all-chalcogenide MOFs exhibiting photonic bandgap transmission have been achieved and optically characterized. The fibers are made of an As38Se62 matrix, with inclusions of Te20As30Se50 glass that shows a higher refractive index (n = 2.9. In those fibers, several transmission bands have been observed in mid infrared depending on the geometry. In addition, for the first time, propagation by photonic bandgap effect in an all-chalcogenide MOF has been observed at 3.39 µm, 9.3 µm, and 10.6 µm. The numerical simulations based on the optogeometric properties of the fibers agree well with the experimental characterizations.

  6. Chalcogenide glass fibers: Optical window tailoring and suitability for bio-chemical sensing

    Science.gov (United States)

    Lucas, Pierre; Coleman, Garrett J.; Jiang, Shibin; Luo, Tao; Yang, Zhiyong

    2015-09-01

    Glassy materials based on chalcogen elements are becoming increasingly prominent in the development of advanced infrared sensors. In particular, infrared fibers constitute a desirable sensing platform due to their high sensitivity and versatile remote collection capabilities for in-situ detection. Tailoring the transparency window of an optical material to the vibrational signature of a target molecule is important for the design of infrared sensor, and particularly for fiber evanescent wave spectroscopy. Here we review the basic principles and recent developments in the fabrication of chalcogenide glass infrared fibers for application as bio-chemical sensors. We emphasize the challenges in designing materials that combine good rheological properties with chemical stability and sufficiently wide optical windows for bio-chemical sensing. The limitation in optical transparency due to higher order overtones of the amorphous network vibrations is established for this family of glasses. It is shown that glasses with wide optical window suffer from higher order overtone absorptions. Compositional engineering with heavy elements such as iodine is shown to widen the optical window but at the cost of lower chemical stability. The optical attenuations of various families of chalcogenide glass fibers are presented and weighed for their applications as chemical sensors. It is then shown that long-wave infrared fibers can be designed to optimize the collection of selective signal from bio-molecules such as cells and tissues. Issues of toxicity and mechanical resistance in the context of bio-sensing are also discussed.

  7. Characterization and modeling of microstructured chalcogenide fibers for efficient mid-infrared wavelength conversion.

    Science.gov (United States)

    Xing, Sida; Grassani, Davide; Kharitonov, Svyatoslav; Billat, Adrien; Brès, Camille-Sophie

    2016-05-01

    We experimentally demonstrate wavelength conversion in the 2 µm region by four-wave mixing in an AsSe and a GeAsSe chalcogenide photonic crystal fibers. A maximum conversion efficiency of -25.4 dB is measured for 112 mW of coupled continuous wave pump in a 27 cm long fiber. We estimate the dispersion parameters and the nonlinear refractive indexes of the chalcogenide PCFs, establishing a good agreement with the values expected from simulations. The different fiber geometries and glass compositions are compared in terms of performance, showing that GeAsSe is a more suited candidate for nonlinear optics at 2 µm. Building from the fitted parameters we then propose a new tapered GeAsSe PCF geometry to tailor the waveguide dispersion and lower the zero dispersion wavelength (ZDW) closer to the 2 µm pump wavelength. Numerical simulations shows that the new design allows both an increased conversion efficiency and bandwidth, and the generation of idler waves further in the mid-IR regions, by tuning the pump wavelength in the vicinity of the fiber ZDW. PMID:27137588

  8. Identification of Abnormal Phase and its Formation Mechanism in Synthesizing Chalcogenide Films

    Science.gov (United States)

    Liu, Kegao; Ji, Nianjing; Xu, Yong; Liu, Hong

    2016-09-01

    Chalcogenide films can be used in thin-film solar cells due to their high photoelectric conversion efficiencies. It was difficult to identify one abnormal phase with high X-ray diffraction (XRD) intensity and preferred orientation in the samples for preparing chalcogenide films by spin-coating and co-reduction on soda-lime glass (Na2OṡCaOṡ6SiO2) substrates. The raw materials and reductant are metal chlorides and hydrazine hydrate respectively. In order to identify this phase, a series of experiments were done under different conditions. The phases of obtained products were analyzed by XRD and the size and morphology were characterized by scanning electron microscope (SEM) and atomic force microscopy (AFM). From the experimental results, first it was proved that the abnormal phase was water-soluble by water immersion experiment, then it was identified as NaCl crystal through XRD, energy dispersive spectrometer (EDS) and SEM. The cubic NaCl crystals have high crystallinity with size lengths of about 0.5-2μm and show a preferred orientation. The reaction mechanism of NaCl crystal was proposed as follows: The NaCl crystal was formed by reaction of Na2O and HCl in a certain experimental conditions.

  9. Crystalline phase responsible for the permanent second-harmonic generation in chalcogenide glass-ceramics

    Science.gov (United States)

    Guignard, Marie; Nazabal, Virginie; Zhang, Xiang-Hua; Smektala, Frédéric; Moréac, Alain; Pechev, Stanislas; Zeghlache, Hassina; Kudlinski, Alexandre; Martinelli, Gilbert; Quiquempois, Yves

    2007-10-01

    Permanent second-harmonic generation (SHG) has been demonstrated in chalcogenide based glass-ceramics containing non-linear micro-crystals with a size of a few micrometers. A glass composition from the Ge-Sb-S system was chosen as the reference glass for its stability against crystallization and atmospheric corrosion. Metallic cadmium was introduced in this matrix to promote crystallite formation resulting in infrared transparent glass-ceramics. A volume crystallization of β-GeS2 phase was obtained within the glass media by heating the glass samples at 370 °C for different durations. The glass-ceramics were then investigated by Raman spectroscopy, X-ray diffraction and NanoSIMS. The second-order non-linear signals were recorded by using Maker fringes experiment and were studied as a function of the crystallized volume fraction. The results indicated a non-linearity in chalcogenide glass-ceramics about one hundred times lower than α-quartz for a 1 mm thick sample heat treated 144 h.

  10. Random free energy barrier hopping model for ac conduction in chalcogenide glasses

    Science.gov (United States)

    Murti, Ram; Tripathi, S. K.; Goyal, Navdeep; Prakash, Satya

    2016-03-01

    The random free energy barrier hopping model is proposed to explain the ac conductivity (σac) of chalcogenide glasses. The Coulomb correlation is consistently accounted for in the polarizability and defect distribution functions and the relaxation time is augmented to include the overlapping of hopping particle wave functions. It is observed that ac and dc conduction in chalcogenides are due to same mechanism and Meyer-Neldel (MN) rule is the consequence of temperature dependence of hopping barriers. The exponential parameter s is calculated and it is found that s is subjected to sample preparation and measurement conditions and its value can be less than or greater than one. The calculated results for a - Se, As2S3, As2Se3 and As2Te3 are found in close agreement with the experimental data. The bipolaron and single polaron hopping contributions dominates at lower and higher temperatures respectively and in addition to high energy optical phonons, low energy optical and high energy acoustic phonons also contribute to the hopping process. The variations of hopping distance with temperature is also studied. The estimated defect number density and static barrier heights are compared with other existing calculations.

  11. Luminescence at 2.8 μm: Er3+-doped chalcogenide micro-waveguide

    Science.gov (United States)

    Nazabal, V.; Starecki, F.; Doualan, J.-L.; Němec, P.; Camy, P.; Lhermite, H.; Bodiou, L.; Anne, M. L.; Charrier, J.; Adam, J. L.

    2016-08-01

    This paper reports the fabrication of luminescent optical rib/ridge waveguides made of erbium doped Ga-Ge-Sb-S films deposited by RF magnetron sputtering. Several fluorescence emissions of Er3+ ions from the visible to the middle infrared spectral domain were clearly observed within the films. The study of the 4I13/2 level lifetime enabled development of a suitable annealing treatment of the films to reach the value of the bulk counterpart while the variation in surface roughness was limited, thus ensuring reasonable optical losses (0.7-0.9 dB/cm). Amplification experiments were carried out at 1.54 μm leading to complete characterization of the erbium-doped micro-waveguide with ∼3.4 dB/cm on/off gain. A demonstration of mid-IR photoluminescence from Er3+-doped chalcogenide micro-waveguide was recorded at ∼2.76 μm. The multi-luminescence from the visible to mid-IR generated using erbium doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunication technologies or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.

  12. Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

    Science.gov (United States)

    Simonds, Brian J.; Meadows, Helene J.; Misra, Sudhajit; Ferekides, Christos; Dale, Phillip J.; Scarpulla, Michael A.

    2015-01-01

    We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and Cu(In,Ga)S] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with Cu(In,Ga)S to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuous-wave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed.

  13. Refractive index dispersion of chalcogenide glasses for ultra-high numerical-aperture fiber for mid-infrared supercontinuum generation

    DEFF Research Database (Denmark)

    Dantanarayana, Harshana G.; Abdel-Moneim, Nabil; Tang, Zhuoqi;

    2014-01-01

    We select a chalcogenide core glass, AsSe, and cladding glass, GeAsSe, for their disparate refractive indices yet sufficient thermal-compatibility for fabricating step index fiber (SIF) for mid-infrared supercontinuum generation (MIR-SCG). The refractive index dispersion of both bulk glasses...

  14. Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

    Science.gov (United States)

    Nolas, George S.; Hassan, M. Shafiq; Dong, Yongkwan; Martin, Joshua

    2016-10-01

    Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn2InTe4 and CuCd2InTe4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn2InSe4. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

  15. Instantaneous microwave frequency measurement using four-wave mixing in a chalcogenide chip

    Science.gov (United States)

    Pagani, Mattia; Vu, Khu; Choi, Duk-Yong; Madden, Steve J.; Eggleton, Benjamin J.; Marpaung, David

    2016-08-01

    We present the first instantaneous frequency measurement (IFM) system using four-wave mixing (FWM) in a compact photonic chip. We exploit the high nonlinearity of chalcogenide to achieve efficient FWM in a short 23 mm As2S3 waveguide. This reduces the measurement latency by orders of magnitude, compared to fiber-based approaches. We demonstrate the tuning of the system response to maximize measurement bandwidth (40 GHz, limited by the equipment used), or accuracy (740 MHz rms error). Additionally, we modify the previous FWM-based IFM system structure to allow for ultra-fast reconfiguration of the bandwidth and resolution of the measurement. This has the potential to become the first IFM system capable of ultra-fast accurate frequency measurement, with no compromise of bandwidth.

  16. Mid-infrared supercontinuum generation in tapered As2S3 chalcogenide planar waveguide

    Science.gov (United States)

    Zhang, Xiang; Hu, Hongyu; Li, Wenbo; Dutta, Niloy K.

    2016-10-01

    We numerically demonstrate mid-infrared supercontinuum generation in a non-uniformly tapered chalcogenide planar waveguide. This planar rib waveguide of As2S3 glass on MgF2 is 2 cm long with increasing etch depth longitudinally to manage the total dispersion. This waveguide has zero dispersion at two wavelengths. The dispersion profile varies along the propagation distance, leading to continuous modification of the phase-matching condition for dispersive wave emission and enhancement of energy transfer efficiency between solitons and dispersive waves. Numerical simulations are conducted for secant input pulses at a wavelength of 1.55 μm with a width of 50 fs and peak power of 2 kW. Results show this proposed scheme significantly broadens the generated continuum, extending from ~1 to ~7 μm.

  17. Si1Sb2Te3 phase change material for chalcogenide random access memory

    Institute of Scientific and Technical Information of China (English)

    Zhang Ting; Song Zhi-Tang; Liu Bo; Liu Wei-Li; Feng Song-Lin; Chen Bomy

    2007-01-01

    This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory.Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase.The film holds a threshold current about 0.155 mA,which is smaller than the value 0.31 mA of Ge2Sb2Te5 film.Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at~180°C and changes to hexagonal structure at~270°C.Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method.Data retention of the films was characterized as well.

  18. Properties of molten Ge chalcogenides an ab initio molecular dynamics study

    CERN Document Server

    Raty, J Y; Bichara, C

    2003-01-01

    In this study, we perform first-principles molecular dynamics simulations of the eutectic alloy Ge sub 1 sub 5 Te sub 8 sub 5 at five different densities and temperatures. We obtain structures in agreement with the available diffraction data and obtain a new view of the molten Ge chalcogenides. We show that the anomalous volume contraction observed in the liquid 30 K above the eutectic temperature corresponds to a significant change of the Ge-Te partial structure factor. The detailed structural analysis shows that volume variations observed upon melting in Ge sub 1 sub 5 Te sub 8 sub 5 , as in liquid GeSe and GeTe, can be explained in terms of the competition between two types of local environment of the germanium atoms. A symmetrical coordination octahedron is entropically favoured at high temperature, while an asymmetrical octahedron resulting from the local manifestation of the Peierls distortion is electronically favoured at lower temperatures.

  19. Updated results on prototype chalcogenide fibers for 10-um wavefront spatial filtering

    CERN Document Server

    Bordé, P J; Amy-Klein, A; Daussy, C; Mazé, G

    2003-01-01

    The detection of terrestrial planets by Darwin/TPF missions will require extremely high quality wavefronts. Single-mode fibers have proven to be powerful beam cleaning components in the near-infrared, but are currently not available in the mid-infrared where they would be critically needed for Darwin/TPF. In this paper, we present updated measurements on the prototype chalcogenide fibers we are developing for the purpose of mid-infrared spatial filtering. We demonstrate the guiding property of our 3rd generation component and we characterize its filtering performances on a 4 mm length: the far-field radiation pattern matches a Gaussian profile at the level of 3% rms and 13% pk-pk.

  20. Radiation-induced effects in chalcogenide glasses of Ge-As-Se system

    International Nuclear Information System (INIS)

    The radiation-optical properties of the chalcogenide glass-like semiconductors of the Ge-As-S ternary systems by variation of the coordination number from 2.4 up to 2.8 are studied. It is shown, that irradiation of the As2S3-Ge2S3 system samples through gamma-quanta of the 60Co radionuclides leads to increase in the long-wave shift of their fundamental absorption edge. the value and character of the given effect essentially depend on the type of the structure of the studied samples and change by the 2D-3D phase transition. The microstructural mechanism of the observed radiation-optical effects is bound most probably with the processes of coordination defects formation

  1. Ionizing radiation solid detectors on the base of amorphous arsenic chalcogenides

    International Nuclear Information System (INIS)

    The possibility to use radiation-sensitive elements of solid chalcogenide glass-like semiconductors (CGS) - special class of oxygen-free amorphous substances, which are alloys of groups 3, 4 and 5 elements with chalcogens (S, Se, Te), was analyzed. The materials feature lower temperatures of radiation information erasure (440-470 K) than oxide glasses. Radiation-induced electron-defect processes lay at physical basis of operation of CGS-based solid detectors. The processes consist in violation of atom normal coordination at the expense of chemical bond rupture and appearance of other bonds. The main principles of operation are reduced to registration of CGS density at a certain wavelength prior to and after total dose collection. The use of helium-neon laser as a probing radiation source simplifies considerably measurement procedure and permits making measurements without sensor extraction from radiation field

  2. Recent advances in very highly nonlinear chalcogenide photonic crystal fibers and their applications

    Science.gov (United States)

    Méchin, David; Brilland, Laurent; Troles, Johann; Chartier, Thierry; Besnard, Pascal; Canat, Guillaume; Renversez, Gilles

    2012-02-01

    Perfos and the laboratory Glasses and Ceramics Group of University of Rennes 1 have worked together to develop a new fabrication technique for chalcogenide preforms based on the glass-casting process. Various fiber profiles have been designed by the Fresnel Institute and fiber losses have been significantly improved, approaching those of the material losses. Using this technology, we have manufactured an AsSe CPCF exhibiting a nonlinear coefficient γ of 46 000 W-1km-1. Self-phase modulation, Raman effect, Brillouin effect, Four-Wave Mixing have been observed leading to the demonstration of various optical functions such four-wave mixing based wavelength conversion at 1.55 μm by FOTON, the demonstration of Raman Shifts and the generation of a mid-IR supercontinuum source by ONERA and the demonstration of a Brillouin fiber laser by FOTON.

  3. Organic phase synthesis of noble metal-zinc chalcogenide core-shell nanostructures.

    Science.gov (United States)

    Kumar, Prashant; Diab, Mahmud; Flomin, Kobi; Rukenstein, Pazit; Mokari, Taleb

    2016-10-15

    Multi-component nanostructures have been attracting tremendous attention due to their ability to form novel materials with unique chemical, optical and physical properties. Development of hybrid nanostructures that are composed of metal-semiconductor components using a simple approach is of interest. Herein, we report a robust and general organic phase synthesis of metal (Au or Ag)-Zinc chalcogenide (ZnS or ZnSe) core-shell nanostructures. This synthetic protocol also enabled the growth of more compositionally complex nanostructures of Au-ZnSxSe1-x alloys and Au-ZnS-ZnSe core-shell-shell. The optical and structural properties of these hybrid nanostructures are also presented.

  4. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  5. Synthesis of chalcogenide and pnictide crystals in salt melts using a steady-state temperature gradient

    Science.gov (United States)

    Chareev, D. A.; Volkova, O. S.; Geringer, N. V.; Koshelev, A. V.; Nekrasov, A. N.; Osadchii, V. O.; Osadchii, E. G.; Filimonova, O. N.

    2016-07-01

    Some examples of growing crystals of metals, alloys, chalcogenides, and pnictides in melts of halides of alkali metals and aluminum at a steady-state temperature gradient are described. Transport media are chosen to be salt melts of eutectic composition with the participation of LiCl, NaCl, KCl, RbCl, CsCl, AlCl3, AlBr3, KBr, and KI in a temperature range of 850-150°C. Some crystals have been synthesized only using a conducting contour. This technique of crystal growth is similar to the electrochemical method. In some cases, to exclude mutual influence, some elements have been isolated and forced to migrate to the crystal growth region through independent channels. As a result, crystals of desired quality have been obtained using no special equipment and with sizes sufficient for study under laboratory conditions.

  6. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    International Nuclear Information System (INIS)

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kΛ of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2 μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm. (fundamental areas of phenomenology(including applications))

  7. Investigation of magnetic phases in parent compounds of iron-chalcogenides via quasiparticle scattering interference

    Science.gov (United States)

    Kamble, Bhaskar; Akbari, Alireza; Eremin, Ilya

    2016-04-01

    We employ a five-orbital tight-binding model to develop the mean-field solution for various possible spin density wave states in the iron-chalcogenides. The quasiparticle interference (QPI) technique is applied to detect signatures of these states due to scatterings arising from non-magnetic impurities. Apart from the experimentally observed double-striped structure with ordering vector (π/2,π/2) , the QPI method is investigated for the extended-stripe as well as the orthogonal double-stripe phase. We discuss QPI as a possible tool to detect and classify various magnetic structures with different electronic structure reconstruction within the framework of the \\text{Fe}1+y\\text{Te} compound.

  8. Chalcogenide glass Photonic Crystal Fiber with flattened dispersion and high nonlinearity at telecommunication wavelength

    Directory of Open Access Journals (Sweden)

    S.REVATHI

    2013-04-01

    Full Text Available A highly nonlinear photonic crystal fiber with eight ring octagonal structure is proposed. Chalcogenide glass of As2S3 is used as the material for this photonic crystal fiber structure. The finiteelementmethod with perfectly matched boundary layer is employed to analyze the guiding properties. Non linearity of 13,584.5 per W-km is obtained at 1.55 μm with reasonable flattened dispersion of -25ps/nm-km to -28 ps/nm-km. Confinement loss achieved is of the order of 10-6 dB/km. Large negative dispersion is also obtained ranging from wavelength of 0.85 μm to 1.95 μm, which can be used for dispersion compensation in fiber optic communication. This Photonic Crystal Fiber structure can also be used for nonlinear applications like ultra short soliton pulse transmission, optical parametricamplification, supercontinuum generation.

  9. Power-efficient production of photon pairs in a tapered chalcogenide microwire

    International Nuclear Information System (INIS)

    Using tapered fibers of As2Se3 chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics

  10. Ultrabroadband, Midinfrared Supercontinuum Generation in Dispersion Engineered As2Se3-Based Chalcogenide Photonic Crystal Fibers

    Directory of Open Access Journals (Sweden)

    Rim Cherif

    2013-01-01

    Full Text Available Small core As2Se3-based photonic crystal fibers (PCFs are accurately characterized for compact, high power, ultrabroadband, and coherent supercontinuum generation within few millimeters fiber length. Bandwidths of ~5.3 μm, 5 μm, and 3.2 μm were calculated for hole-to-hole spacings Λ= 3.5 μm, 4.5 μm, and 5.5 μm, respectively. The spectral broadening in the chalcogenide PCF is mainly caused by self-phase modulation and Raman-induced soliton self-frequency shift. The results show that small core As2Se3 PCFs are a promising candidate for mid-IR SCG up to ~8 μm.

  11. Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

    Directory of Open Access Journals (Sweden)

    P. Bia

    2012-01-01

    Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

  12. High-quality chalcogenide glass waveguide fabrication by hot melt smoothing and micro-trench filling

    Science.gov (United States)

    Zhai, Yanfen; Qi, Renduo; Yuan, Chenzhi; Zhang, Wei; Huang, Yidong

    2016-05-01

    We propose a fabrication method for chalcogenide glass (ChG) waveguides based on hot melt smoothing and micro-trench filling. ChGs has low melting points and good flowability. Experiments show that this method can realize high quality As2S7 glass waveguides with reverse ridge structures. The attenuations of the fundamental quasi-TE mode and quasi-TM mode are 0.1 and 0.9 dB/cm, respectively. This method avoids fabrication processes, such as photolithography, lift-off, and dry or wet etching that are directly applied to the ChG films. It provides a simple way to fabricate high quality ChG waveguides, which have great potential for applications in integrated nonlinear optical devices.

  13. Chalcogenide glass planar MIR couplers for future chip based Bracewell interferometers

    CERN Document Server

    Goldsmith, Harry-Dean Kenchington; Ireland, Michael; Ma, Pan; Tuthill, Peter; Eggleton, Ben; Lawrence, John S; Debbarma, Sukanta; Luther-Davies, Barry; Madden, Stephen J

    2016-01-01

    Photonic integrated circuits are established as the technique of choice for a number of astronomical processing functions due to their compactness, high level of integration, low losses, and stability. Temperature control, mechanical vibration and acoustic noise become controllable for such a device enabling much more complex processing than can realistically be considered with bulk optics. To date the benefits have mainly been at wavelengths around 1550 nm but in the important Mid-Infrared region, standard photonic chips absorb light strongly. Chalcogenide glasses are well known for their transparency to beyond 10000 nm, and the first results from coupler devices intended for use in an interferometric nuller for exoplanetary observation in the Mid-Infrared L band (3800-4200 nm) are presented here showing that suitable performance can be obtained both theoretically and experimentally for the first fabricated devices operating at 4000 nm.

  14. Plasma diagnostics in pulsed laser deposition of GaLaS chalcogenides

    International Nuclear Information System (INIS)

    The aim of this work is to characterize the ejection plume obtained by laser ablation of GaLaS (GLS) samples in order to better understand the ablation phenomena for optimizing the pulsed laser deposition of chalcogenide thin films. The dynamics of the plasma between target and substrate was investigated through time- and space-resolved optical emission spectroscopy. High-resolution optical spectra have been recorded in the UV–VIS range using a 500-mm focal length monochromator and a fast gate ICCD camera. From the space–time evolution of the optical signals, the velocities of various species (including neutrals and ions) have been derived. Using the relative intensity method, the space- and time-evolution of the excitation temperature and electronic density have been determined. A complex behavior of the laser ablation plasma has been revealed.

  15. Plasma diagnostics in pulsed laser deposition of GaLaS chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Pompilian, O.G. [Laboratoire de Physique des Lasers, Atomes et Molécules (UMR 8523), Université Lille 1, 59655 Villeneuve d’Ascq cedex (France); Gurlui, S., E-mail: sgurlui@uaic.ro [Physics Department, Alexandru Ioan Cuza University of Iasi, 700506 Iasi (Romania); Nemec, P. [Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Laboratoire des Verres et Céramiques, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France); Ziskind, M.; Focsa, C. [Laboratoire de Physique des Lasers, Atomes et Molécules (UMR 8523), Université Lille 1, 59655 Villeneuve d’Ascq cedex (France)

    2013-08-01

    The aim of this work is to characterize the ejection plume obtained by laser ablation of GaLaS (GLS) samples in order to better understand the ablation phenomena for optimizing the pulsed laser deposition of chalcogenide thin films. The dynamics of the plasma between target and substrate was investigated through time- and space-resolved optical emission spectroscopy. High-resolution optical spectra have been recorded in the UV–VIS range using a 500-mm focal length monochromator and a fast gate ICCD camera. From the space–time evolution of the optical signals, the velocities of various species (including neutrals and ions) have been derived. Using the relative intensity method, the space- and time-evolution of the excitation temperature and electronic density have been determined. A complex behavior of the laser ablation plasma has been revealed.

  16. Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

    KAUST Repository

    San-Román-Alerigi, Damián P.

    2013-01-01

    In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

  17. Second harmonic generation in nanoscale films of transition metal chalcogenides: Taking into account multibeam interference

    Science.gov (United States)

    Lavrov, S. D.; Kudryavtsev, A. V.; Shestakova, A. P.; Kulyuk, L.; Mishina, E. D.

    2016-05-01

    Second harmonic generation is studied in structures containing nanoscale layers of transition metal chalcogenides that are two-dimensional semiconductors and deposited on a SiO2/Si substrate. The second harmonic generation intensity is calculated with allowance for multibeam interference in layers of dichalcogenide and silicon oxide. The coefficient of reflection from the SiO2-layer-based Fabry-Perot cavity is subsequently calculated for pump wave fields initiating nonlinear polarization at every point of dichalcogenide, which is followed by integration of all second harmonic waves generated by this polarization. Calculated second harmonic intensities are presented as functions of dichalcogenide and silicon oxide layer thicknesses. The dependence of the second harmonic intensity on the MoS2 layer thickness is studied experimentally in the layer of 2-140 nm. A good coincidence of the experimental data and numerical simulation results has been obtained.

  18. Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

    Science.gov (United States)

    Hughes, Mark A.; Curry, Richard J.; Hewak, Daniel W.

    2011-01-01

    Vanadium doped chalcogenide glass has potential as an active gain medium, particularly at telecommunications wavelengths. This dopant has three spin allowed absorption transitions at 1100, 737 and 578 nm, and a spin forbidden absorption transition at 1000 nm. X-ray photoelectron spectroscopy indicated the presence of vanadium in a range of oxidation states from V+ to V5+. Excitation of each absorption band resulted in the same characteristic emission spectrum and lifetime, indicating that only one oxidation state is optically active. Arguments based on Tanabe-Sugano analysis indicated that the configuration of the optically active vanadium ion was octahedral V2+. The calculated crystal field parameters (Dq/B, B and C/B) were 1.85, 485.1 and 4.55, respectively.

  19. Power-efficient production of photon pairs in a tapered chalcogenide microwire

    Energy Technology Data Exchange (ETDEWEB)

    Meyer-Scott, Evan, E-mail: emeyersc@uwaterloo.ca; Dot, Audrey [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Ahmad, Raja; Li, Lizhu; Rochette, Martin [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montréal, Québec H3A 2A7 (Canada); Jennewein, Thomas [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Quantum Information Science Program, Canadian Institute for Advanced Research, 180 Dundas Street West, Suite 1400, Toronto, Ontario M5G 1Z8 (Canada)

    2015-02-23

    Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

  20. Dy{sup 3+}-doped Ga–Sb–S chalcogenide glasses for mid-infrared lasers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Mingjie [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China); Yang, Anping, E-mail: apyang@jsnu.edu.cn [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China); Peng, Yuefeng [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China); Zhang, Bin; Ren, He; Guo, Wei; Yang, Yan; Zhai, Chengcheng; Wang, Yuwei; Yang, Zhiyong; Tang, Dingyuan [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China)

    2015-10-15

    Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficiency. • The mid-infrared emissions have large stimulated emission cross sections. - Abstract: Novel Ga–Sb–S chalcogenide glasses doped with different amount of Dy{sup 3+} ions were prepared. Their thermal stability, optical properties, and mid-infrared (MIR) emission properties were investigated. The glasses show good thermal stability, excellent infrared transparency, very low phonon energy (∼306 cm{sup −1}), and intense emissions centered at 2.95, 3.59, 4.17 and 4.40 μm. Three Judd–Ofelt intensity parameters (Ω{sub 2} = 8.51 × 10{sup −20} cm{sup 2}, Ω{sub 4} = 2.09 × 10{sup −20} cm{sup 2}, and Ω{sub 6} = 1.60 × 10{sup −20} cm{sup 2}) are obtained, and the related radiative transition properties are evaluated. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions (88.10% and 1.11 × 10{sup −20} cm{sup 2} for 2.95 μm emission, 75.90% and 0.38 × 10{sup −20} cm{sup 2} for 4.40 μm emission, respectively) in the Dy{sup 3+}-doped Ga–Sb–S glasses make them promising gain materials for the MIR lasers.

  1. Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

    International Nuclear Information System (INIS)

    Graphical abstract: - Abstract: A long-standing technological challenge to the widespread application of thermoelectric generators is obtaining high-performance thermoelectric materials from abundant elements. Intensive study on PbTe alloys has resulted in a high figure of merit for the single-phase ternary PbTe–PbSe system through band structure engineering, and the low thermal conductivity achieved due to nanostructuring leads to high thermoelectric performance for ternary PbTe–PbS compounds. Recently, the single-phase p-type quaternary PbTe–PbSe–PbS alloys have been shown to provide thermoelectric performance superior to the binary and ternary lead chalcogenides. This occurs via tuning of the band structure and from an extraordinary low thermal conductivity resulting from high-contrast atomic mass solute atoms. Here, we present the thermoelectric efficiency of nanostructured p-type quaternary PbTe–PbSe–PbS composites and compare the results with corresponding single-phase quaternary lead chalcogenide alloys. We demonstrate that the very low lattice thermal conductivity achieved is attributed to phonon scattering at high-contrast atomic mass solute atoms rather than from the contribution of secondary phases. This results in a thermoelectric efficiency of ∼1.4 over a wide temperature range (650–850 K) in a p-type quaternary (PbTe)0.65(PbSe)0.1(PbS)0.25 composite that is lower than that of single-phase (PbTe)0.85(PbSe)0.1(PbS)0.05 alloy without secondary phases

  2. Hubbard interactions in iron-based pnictides and chalcogenides: Slater parametrization, screening channels, and frequency dependence

    Science.gov (United States)

    van Roekeghem, Ambroise; Vaugier, Loïg; Jiang, Hong; Biermann, Silke

    2016-09-01

    We calculate the strength of the frequency-dependent on-site electronic interactions in the iron pnictides LaFeAsO, BaFe2As2 , BaRu2As2 , and LiFeAs and the chalcogenide FeSe from first principles within the constrained random phase approximation. We discuss the accuracy of an atomiclike parametrization of the two-index density-density interaction matrices based on the calculation of an optimal set of three independent Slater integrals, assuming that the angular part of the Fe d localized orbitals can be described within spherical harmonics as for isolated Fe atoms. We show that its quality depends on the ligand-metal bonding character rather than on the dimensionality of the lattice: it is excellent for ionic-like Fe-Se (FeSe) chalcogenides and a more severe approximation for more covalent Fe-As (LaFeAsO, BaFe2As2 ) pnictides. We furthermore analyze the relative importance of different screening channels, with similar conclusions for the different pnictides but a somewhat different picture for the benchmark oxide SrVO3: the ligand channel does not appear to be dominant in the pnictides, while oxygen screening is the most important process in the oxide. Finally, we analyze the frequency dependence of the interaction. In contrast to simple oxides, in iron pnictides its functional form cannot be simply modeled by a single plasmon, and the actual density of modes enters the construction of an effective Hamiltonian determining the low-energy properties.

  3. Surface corrugating direct laser writing of microstructures in ternary chalcogenide films using a continuous-wave super-bandgap laser

    International Nuclear Information System (INIS)

    Direct laser writing using a tightly focused 442 nm continuous-wave laser was applied to corrugate the surface of ternary As–S–Se chalcogenide thin films with high spatial resolution. The topography of the emerging surface relief structures and analyses of the underlying photo-thermal processes indicate that depending on the beam intensity and writing speed the formation mechanisms of the surface patterns are mainly based on photoexpansion caused by thermoelastic deformation, mass flow out of the region of the highest local intensity in the centre of the exposing laser beam resulting from an induced surface tension gradient, and decomposition/vaporization processes generated by the local heating due to absorption of the laser light. Examples of written periodic pattern arrays demonstrate that direct laser writing is a very promising method for the fabrication of surface relief structures into ternary chalcogenide thin films. (paper)

  4. Mid-infrared supercontinuum generation spanning more than 11 μm in a chalcogenide step-index fiber

    DEFF Research Database (Denmark)

    Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis;

    2015-01-01

    Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively.......Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively....

  5. Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

    Science.gov (United States)

    Zhang, Yubo; Wang, Youwei; Zhang, Jiawei; Xi, Lili; Zhang, Peihong; Zhang, Wenqing

    2016-05-01

    Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe2 and Cu2ZnSnSe4 materials, several novel candidates are identified to have optimal bandgaps of around 1.0-1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

  6. A Tapered Chalcogenide Microstructured Optical Fiber for Mid-IR Parabolic Pulse Generation: Design and Performance Study

    OpenAIRE

    Barh, Ajanta; Ghosh, S.; Varshney, Ravi K.; Pal, Bishnu P.

    2013-01-01

    This paper presents a theoretical design of chalcogenide glass based tapered microstructured optical fiber (MOF) to generate high power parabolic pulses (PPs) at the mid-IR wavelength (~ 2 {\\mu}m). We optimize fiber cross-section by the multipole method and studied pulse evolution by well known Symmetrized Split-Step Fourier Method. Our numerical investigation reveals the possibility of highly efficient PP generation within a very short length (~ 18 cm) of this MOF for a Gaussian input pulse ...

  7. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil;

    2016-01-01

    Broadband (1.6-18 THz) terahertz time-domain spectroscopy (THz-TDS) and time-resolved terahertz spectroscopy (TRTS) were performed on a 54 mu m thick chalcogenide glass (As30Se30Te40) sample with a two-color laser-induced air plasma THz system in transmission and reflection modes, respectively. Two...... induced THz Kerr effect, indicating that free carriers are responsible for the transient index change. (C) 2016 Chinese Laser Press...

  8. High power broadband mid-infrared supercontinuum fiber laser using a novel chalcogenide AsSe2 photonic crystal fiber

    Science.gov (United States)

    Diouf, Mbaye; Ben Salem, Amine; Cherif, Rim; Wague, Ahmadou; Zghal, Mourad

    2016-05-01

    A high power supercontinuum (SC) based on a new type of chalcogenide AsSe2 material for broadband mid-infrared light source is numerically reported. Ultra-broadband coherent mid-IR SC generation with more than 3 octave-spanning from 1.7 to 14 μm in a novel design of chalcogenide AsSe2 photonic crystal fiber (PCF) is demonstrated. To the best of our knowledge and aiming to properly model the nonlinear propagation, an accurate fit of the Raman response function and the corresponding Raman gain of the novel AsSe2 chalcogenide glass are proposed numerically for the first time. The obtained SC is generated by pumping at 3.9 μm in the anomalous dispersion regime in only 8 mm long fiber. Our study shows that the initially generated SC from 150 fs pulse duration with 8.8 kW peak power exhibits high power proportion of more than 80% for wavelengths beyond 3 μm which is very promising for designing high power SC fiber laser sources in the mid-IR atmospheric windows and the molecular fingerprint region.

  9. A Self-Templating Scheme for the Synthesis of Nanostructured Transition Metal Chalcogenide Electrodes for Capacitive Energy Storage

    KAUST Repository

    Xia, Chuan

    2015-06-11

    Due to their unique structural features including well-defined interior voids, low density, low coefficients of thermal expansion, large surface area and surface permeability, hollow micro/nanostructured transition metal sulfides with high conductivity have been investigated as new class of electrode materials for pseudocapacitor applications. Herein, we report a novel self-templating strategy to fabricate well-defined single and double-shell NiCo2S4 hollow spheres, as a promising electrode material for pseudocapacitors. The surfaces of the NiCo2S4 hollow spheres consist of self-assembled 2D mesoporous nanosheets. This unique morphology results in a high specific capacitance (1257 F g-1 at 2 A g-1), remarkable rate performance (76.4% retention of initial capacitance from 2 A g-1 to 60 A g-1) and exceptional reversibility with a cycling efficiency of 93.8% and 87% after 10,000 and 20,000 cycles, respectively, at a high current density of 10 A g-1. The cycling stability of our ternary chalcogenides is comparable to carbonaceous electrode materials, but with much higher specific capacitance (higher than any previously reported ternary chalcogenide), suggesting that these unique chalcogenide structures have potential application in next-generation commercial pseudocapacitors.

  10. Designing mid-wave infrared (MWIR) thermo-optic coefficient (dn/dT) in chalcogenide glasses

    Science.gov (United States)

    Gleason, Benn; Sisken, Laura; Smith, Charmayne; Richardson, Kathleen

    2016-05-01

    Seventeen infrared-transmitting GeAsSe chalcogenide glasses were fabricated to determine the role of chemistry and structure on mid-wave infrared (MWIR) optical properties. The refractive index and thermoptic coefficients of samples were measured at λ = 4.515 μm using an IR-modified Metricon prism coupler, located at University of Central Florida. Thermo-optic coefficient (dn/dT) values were shown to range from approximately -40 ppm/°C to +65 ppm/°C, and refractive index was shown to vary between approximately 2.5000 and 2.8000. Trends in refractive index and dn/dT were found to be related to the atomic structures present within the glassy network, as opposed to the atomic percentage of any individual constituent. A linear correlation was found between the quantity (n-3•dn/dT) and the coefficient of thermal expansion (CTE) of the glass, suggesting the ability to compositionally design chalcogenide glass compositions with zero dn/dT, regardless of refractive index or dispersion performance. The tunability of these novel glasses offer increased thermal and mechanical stability as compared to the current commercial zero dn/dT options such as AMTIR-5 from Amorphous Materials Inc. For IR imaging systems designed to achieve passive athermalization, utilizing chalcogenide glasses with their tunable ranges of dn/dT (including zero) can be key to addressing system size, weight, and power (SWaP) limitations.

  11. Interfacial band bending in Au-tipped Cd-chalcogenides hybrid nanostructures

    Science.gov (United States)

    Saad, Mahmoud M.; Abdallah, Tamer; Negm, Sohair; Talaat, Hassan

    2015-12-01

    The interfacial electronic structure of Au-tipped CdX (X = S, Se and Te) hybrid nanostructures (HNSs) have been studied by UHV scanning tunneling spectroscopy (STS) at room temperature. Au-tipped CdX (X = S, Se and Te) HNSs were synthesized by phase transfer chemical methods. The dimensions were determined by the scanning tunneling microscope (STM), the high resolution transmission electron microscope (HRTEM) and the optical absorption. The measured dimensions using these techniques are consistent, giving Au tip average size within the range of [2.5, 3.5] nm and Cd-chalcogenides quantum dots (QDs) nanoparticles (NPs) average size within the range of [3.5, 4] nm. The STS at the interface of Au-tipped CdS and CdSe HNSs detects a downward band bending towards the interface ∼0.25 ± 0.01 eV and 0.18 ± 0.03 eV respectively, indicating an electron accumulation at these interfaces. However, an upward band bending towards the interface of ∼0.78 ± 0.01 eV is measured by the STS at the interface of Au-tipped CdTe HNS, indicating electron depletion at the interface. The band bending values were also confirmed using the corresponding calculated models of the energy band diagrams. These different behaviors were also observed in the UV-vis absorption of Au-tipped CdS and CdSe HNSs, which shows exciton bleaching features, but an exciton increasing feature is observed in the case of Au-tipped CdTe HNS. These later results are explained as a result of the presence of electron accumulation at the interface of Au-tipped CdS and CdSe HNSs, and also an electron depletion at the interface of Au-tipped CdTe HNS. Such determinations of the interfacial band bending in Au-tipped Cd-chalcogenides HNSs have significant consequences on the charge separation efficiency and the photo-response behavior. Furthermore, the presence of these bands has a direct impact in the field of applying plasmonics for improved photovoltaic solarcells.

  12. High-pressure and temperature-induced structural, elastic, and thermodynamical properties of strontium chalcogenides

    Science.gov (United States)

    Varshney, Dinesh; Jain, S.; Shriya, S.; Khenata, R.

    2016-09-01

    Pressure- and temperature-dependent mechanical, elastic, and thermodynamical properties of rock salt to CsCl structures in semiconducting Sr X ( X = O, S, Se, and Te) chalcogenides are presented based on model interatomic interaction potential with emphasis on charge transfer interactions, covalency effect, and zero point energy effects apart from long-range Coulomb, short-range overlap repulsion extended and van der Waals interactions. The developed potential with non-central forces validates the Cauchy discrepancy among elastic constants. The volume collapse ( V P/ V 0) in terms of compressions in Sr X at higher pressure indicates the mechanical stiffening of lattice. The expansion of Sr X lattice is inferred from steep increase in V T/ V 0 and is attributed to thermal softening of Sr X lattice. We also present the results for the temperature-dependent behaviors of hardness, heat capacity, and thermal expansion coefficient. From the Pugh's ratio (ϕ = B T /G H), the Poisson's ratio ( ν) and the Cauchy's pressure ( C 12- C 44), we classify SrO as ductile but SrS, SrSe, and SrTe are brittle material. To our knowledge these are the first quantitative theoretical prediction of the pressure and temperature dependence of mechanical stiffening, thermally softening, and brittle nature of Sr X ( X = O, S, Se, and Te) and still await experimental confirmations.

  13. Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

    Science.gov (United States)

    Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

    2016-05-01

    Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

  14. Evidence for segregation of Te in ``phase-change" thin chalcogenide Ge-Sb-Te films

    Science.gov (United States)

    Cabral, C., Jr.; Krusin-Elbaum, L..; Chen, K. N.; Copel, M.; Bruley, J.; Deline, V. R.

    2007-03-01

    The novel chalcogenide phase-change materials are promising candidates for new technologies such as nonvolatile memories and programmable switches in 3D integration and planar logic. They are typically thin Ge-Sb-Te (GST) films, where a thermally induced amorphous-to-crystalline phase transformation can be fast and reversible, with the corresponding large swing in resistance values between the two stable structural states. Here we report on the structural evolution of GST films during thermal cycling and demonstrate using high-resolution (0.5 nm focused probe STEM) scans that Te segregates to the grain boundaries at fairly low temperatures. We show that diffusion of Te along grain boundaries results in its pileup at the free surface and interaction with Ti in adhesion layers in device- compatible stacks. This is consistent with impeded grain growth and with post-crystallization stress release. This motion may impact the ultimate life-cycle of phase-change based devices and should guide the optimal GST material design.

  15. Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry.

    Science.gov (United States)

    Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

    2016-05-01

    Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti(4+) to form planar p-type [Ti(4+)n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B(3+), Al(3+) and Sn(4+)) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device. PMID:26828848

  16. Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

    Indian Academy of Sciences (India)

    H M Pathan; C D Lokhande

    2004-04-01

    During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

  17. Fabrication and characterization of a chalcogenide-tellurite composite microstructure fiber with high nonlinearity.

    Science.gov (United States)

    Liao, Meisong; Chaudhari, Chitrarekha; Qin, Guanshi; Yan, Xin; Kito, Chihiro; Suzuki, Takenobu; Ohishi, Yasutake; Matsumoto, Morio; Misumi, Takashi

    2009-11-23

    A highly nonlinear composite fiber, which has a 1.5 microm chalcogenide glass core surrounded by a tellurite glass microstructure cladding, has been fabricated by the method of stack and draw. A tellurite glass capillary containing a As(2)S(3) rod was sealed with negative pressure inside. Then this capillary and other empty capillaries were stacked into a tellurite glass tube, and elongated into a cane. This cane was then inserted into another tellurite glass jacket tube and drawn into the composite microstructure fiber. The fiber has a flattened chromatic dispersion together with a zero dispersion wavelength located in the near infrared range. The propagation losses at 1.55 microm were 18.3 dB/m. The nonlinear coefficient at 1.55 microm was 9.3 m(-1)W(-1). Such a high nonlinear coefficient counteracts the high propagation losses to a large extent. A supercontinuum spectrum of 20-dB bandwidth covering 800-2400 nm was generated by this composite microstructure fiber. PMID:19997402

  18. Photoelectric properties of defect chalcogenide HgGa2X4 (x=S, Se, Te)

    Science.gov (United States)

    Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini

    2016-05-01

    We present results of ab initio study of ordered vacancy compounds of mercury. The electronic structure, charge density, optical and transport properties of the semiconductor family HgGa2X4 (X=S, Se, Te) are calculated using the full potential linearized augmented plane wave method which is based on the density functional theory. A direct bandgap is observed in these compounds, which reduces in the order S>Se>Te. From the density of states it is observed that there is strong hybridization of Hg-d, Ga-d and X-p states. The optical properties show a red shift with increasing size and atomic no. of the chalcogenide atoms. We have also reported the transport properties of mercury thiogallates for the first time. The selenide compound exhibits n-type nature whereas HgGa2S4 and HgGa2Te4 show p-type behavior. The power factor and ZT for the HGS increases at low temperatures, the figure of merit is highest for HgGa2Se4 (1.17) at 19 K.

  19. Thermal behavior in Se-Te chalcogenide system: Interplay of thermodynamics and kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Svoboda, Roman, E-mail: roman.svoboda@upce.cz; Málek, Jiří [Faculty of Chemical Technology, Department of Physical Chemistry, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic)

    2014-12-14

    Heat capacity measurements were performed for Se, Se{sub 90}Te{sub 10}, Se{sub 80}Te{sub 20}, and Se{sub 70}Te{sub 30} materials in the 230–630 K temperature range. Both glassy and crystalline C{sub p} dependences were found to be identical within the experimental error. The compositional dependence of the N-type undercooled liquid C{sub p} evolution was explained on the basis of free-volume theory; vibrational and chemical contributions to heat capacity were found to be roughly similar for all Se-Te compositions. The thermal behavior in the Se-Te chalcogenide system was thoroughly studied: glass transition, cold crystallization, and melting were investigated in dependence on composition and various experimental conditions (heating rate, particle size, and pre-nucleation period). The kinetics of the structural relaxation and crystallization processes are described in terms of the Tool-Narayanaswamy-Moynihan and Johnson-Mehl-Avrami models. The complexity of these processes is thoroughly discussed with regard to the compositionally determined changes of molecular structures. The discussion is conducted in terms of the mutual interplay between the thermodynamics and kinetics in this system.

  20. Thermal behavior in Se-Te chalcogenide system: interplay of thermodynamics and kinetics.

    Science.gov (United States)

    Svoboda, Roman; Málek, Jiří

    2014-12-14

    Heat capacity measurements were performed for Se, Se90Te10, Se80Te20, and Se70Te30 materials in the 230-630 K temperature range. Both glassy and crystalline Cp dependences were found to be identical within the experimental error. The compositional dependence of the N-type undercooled liquid Cp evolution was explained on the basis of free-volume theory; vibrational and chemical contributions to heat capacity were found to be roughly similar for all Se-Te compositions. The thermal behavior in the Se-Te chalcogenide system was thoroughly studied: glass transition, cold crystallization, and melting were investigated in dependence on composition and various experimental conditions (heating rate, particle size, and pre-nucleation period). The kinetics of the structural relaxation and crystallization processes are described in terms of the Tool-Narayanaswamy-Moynihan and Johnson-Mehl-Avrami models. The complexity of these processes is thoroughly discussed with regard to the compositionally determined changes of molecular structures. The discussion is conducted in terms of the mutual interplay between the thermodynamics and kinetics in this system. PMID:25494760

  1. Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M =Cu ,Ag )

    Science.gov (United States)

    Ma, Yandong; Kou, Liangzhi; Dai, Ying; Heine, Thomas

    2016-06-01

    Two-dimensional (2D) topological insulators (TIs) are recently recognized states of quantum matter that are highly interesting for lower-power-consuming electronic devices owing to their nondissipative transport properties protected from backscattering. So far, only few 2D TIs, suffering from small bulk band gap (TIs in group-11 chalcogenide 2D crystals, M2Te (M =Cu ,Ag ) . The nontrivial topological states in C u2Te and A g2Te 2D crystals, identified by topological invariant and edge state calculations, exhibit sizeable bulk gaps of 78 and 150 meV, respectively, suggesting that they are candidates for room-temperature applications. Moreover, strain engineering leads to effective control of the nontrivial gaps of C u2Te and A g2Te , and a topological phase transition can be realized in C u2Te , while the nontrivial phase in A g2Te is stable against strain. Their dynamic and thermal stabilities are further confirmed by employing phonon calculations and ab initio molecular dynamic simulations.

  2. The use of castor oil and ricinoleic acid in lead chalcogenide nanocrystal synthesis

    Science.gov (United States)

    Kyobe, Joseph W. M.; Mubofu, Egid B.; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

    2016-08-01

    A green solution-based thermolysis method for the synthesis of lead chalcogenide (PbE, E = S, Se, Te) nanocrystals in castor oil (CSTO) and its isolate ricinoleic acid (RA) is described. The blue shift observed from the optical spectra of CSTO and RA-capped PbE nanocrystals (NCs) confirmed the evidence of quantum confinement. The dimensions of PbE NCs obtained from NIR absorption spectra, transmission electron microscopy (TEM), and X-ray diffraction (XRD) studies were in good agreement. The particle sizes estimated were in the range of 20, 25, and 130 nm for castor oil-capped PbS, PbSe, and PbTe, respectively. Well-defined close to cubic-shaped particles were observed in the scanning electron microscopy (SEM) images of PbSe and PbTe nanocrystals. The high-resolution TEM and selective area electron diffraction (SAED) micrographs of the as-synthesized crystalline PbE NCs showed distinct lattice fringes with d-spacing distances corroborating with the standard values reported in literature.

  3. Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

    KAUST Repository

    Yang, Xiaoming

    2014-12-12

    Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

  4. Elucidating the magnetic and superconducting phases in the alkali metal intercalated iron chalcogenides

    Science.gov (United States)

    Wang, Meng; Yi, Ming; Tian, Wei; Bourret-Courchesne, Edith; Birgeneau, Robert J.

    2016-02-01

    The complex interdigitated phases have greatly frustrated attempts to document the basic features of the superconductivity in the alkali metal intercalated iron chalcogenides. Here, using elastic neutron scattering, energy-dispersive x-ray spectroscopy, and resistivity measurements, we elucidate the relations of these phases in RbxFeySe2 -zSz . We find (i) the iron content is crucial in stabilizing the stripe antiferromagnetic (AF) phase with rhombic iron vacancy order (y ≈1.5 ) , the block AF phase with √{5 }×√{5 } iron vacancy order (y ≈1.6 ) , and the iron vacancy-free phase (y ≈2 ) ; and (ii) the iron vacancy-free superconducting phase (z =0 ) evolves into an iron vacancy-free metallic phase with sulfur substitution (z >1.5 ) due to the progressive decrease of the electronic correlation strength. Both the stripe AF phase and the block AF phase are Mott insulators. The iron-rich compounds (y >1.6 ) undergo a first order transition from an iron vacancy disordered phase at high temperatures into the √{5 }×√{5 } iron vacancy ordered phase and the iron vacancy-free phase below Ts. Our data demonstrate that there are miscibility gaps between these three phases. The existence of the miscibility gaps in the iron content is a key to understanding the relationship between these complicated phases.

  5. Molybdenum-Bismuth Bimetallic Chalcogenide Nanosheets for Highly Efficient Electrocatalytic Reduction of Carbon Dioxide to Methanol.

    Science.gov (United States)

    Sun, Xiaofu; Zhu, Qinggong; Kang, Xinchen; Liu, Huizhen; Qian, Qingli; Zhang, Zhaofu; Han, Buxing

    2016-06-01

    Methanol is a very useful platform molecule and liquid fuel. Electrocatalytic reduction of CO2 to methanol is a promising route, which currently suffers from low efficiency and poor selectivity. Herein we report the first work to use a Mo-Bi bimetallic chalcogenide (BMC) as an electrocatalyst for CO2 reduction. By using the Mo-Bi BMC on carbon paper as the electrode and 1-butyl-3-methylimidazolium tetrafluoroborate in MeCN as the electrolyte, the Faradaic efficiency of methanol could reach 71.2 % with a current density of 12.1 mA cm(-2) , which is much higher than the best result reported to date. The superior performance of the electrode resulted from the excellent synergistic effect of Mo and Bi for producing methanol. The reaction mechanism was proposed and the reason for the synergistic effect of Mo and Bi was discussed on the basis of some control experiments. This work opens a way to produce methanol efficiently by electrochemical reduction of CO2 . PMID:27098284

  6. Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

    Science.gov (United States)

    Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

    2016-05-01

    As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes.

  7. Large and Ultrafast Third-Order Nonlinear Optical Properties of Ge-S Based Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    CHU Sai-Sai; WANG Shu-Feng; TAO Hai-Zheng; WANG Zhen-Wei; YANG Hong; LIN Chang-Gui; GONG Qi-Huang; ZHAO Xiu-Jian

    2007-01-01

    We report ultrafast third-order nonlinear optical (NLO) properties of several chalcogenide glasses GeSx (x = 1.8,2.0, 2.5) measured by femtosecond time-resolved optical Kerr gate technique at 820nm. The third-order nonlinear susceptibility of GeS1.8 glass is determined to be as large as 1.41 × 10-12 esu, which is the maximum value of the third order nonlinear susceptibility X(3) for the three compositions investigated. The symmetric Gauss profiles of optical Kerr signals reveal the nature of ultrafast nonlinear response of these samples, which are originated from the ultrafast polarization of the electron clouds. By detailed microstructural analysis of these glasses based on the chain-crossing model (CCM) and the random-covalent-network model (RCNM), it can be concluded that X(3) value of GeSx glasses can be enhanced greatly by S-S covalent bonds or S3Ge-GeS3 ethane-like units.

  8. Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

    Energy Technology Data Exchange (ETDEWEB)

    Meenatchi, Boominathan [Cauvery College for Women, Tamilnadu (India); Renuga, Velayutham [National College, Tamilnadu (India); Manikandan, Ayyar [Bharath Institute of Higher Education and Research, Bharath University, Tamilnadu (India)

    2016-03-15

    Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

  9. Optical properties and local structure of Dy3+-doped chalcogenide and chalcohalide glasses

    Institute of Scientific and Technical Information of China (English)

    TANG Gao; YANG Zhiyong; LUO Lan; CHEN Wei

    2008-01-01

    Dy3+-doped Ge-Ga-Se chalcogenide glasses and GeSe2-Ga2Se3-CsI chalcohalide glasses were prepared. The absorption, emission properties, and local structure of the glasses were investigated. When excited at 808 nm diode laser, intense 1.32 and 1.55 μm near-infrared luminescence were observed with full width at half maximum (FWHM) of about 90 and 50 rim, respectively. The lifetime of the 1.32 μm emission varied due to changes in the local structure surrounding Dy3+ ions. The longest lifetime was over 2.5 ms, and the value was signifi-cantly higher than that in other Dy3+-doped glasses. Some other spectroscopic parameters were calculated by using Judd-Ofelt theory. Meanwhile, Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses showed good infrared transmittance. As a result, Dy3+-doped Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses were believed to be useful hosts for 1.3 μm optical fiber amplifier.

  10. High-pressure and temperature-induced structural, elastic, and thermodynamical properties of strontium chalcogenides

    Science.gov (United States)

    Varshney, Dinesh; Jain, S.; Shriya, S.; Khenata, R.

    2016-04-01

    Pressure- and temperature-dependent mechanical, elastic, and thermodynamical properties of rock salt to CsCl structures in semiconducting SrX (X = O, S, Se, and Te) chalcogenides are presented based on model interatomic interaction potential with emphasis on charge transfer interactions, covalency effect, and zero point energy effects apart from long-range Coulomb, short-range overlap repulsion extended and van der Waals interactions. The developed potential with non-central forces validates the Cauchy discrepancy among elastic constants. The volume collapse (V P/V 0) in terms of compressions in SrX at higher pressure indicates the mechanical stiffening of lattice. The expansion of SrX lattice is inferred from steep increase in V T/V 0 and is attributed to thermal softening of SrX lattice. We also present the results for the temperature-dependent behaviors of hardness, heat capacity, and thermal expansion coefficient. From the Pugh's ratio (ϕ = B T /G H), the Poisson's ratio (ν) and the Cauchy's pressure (C 12-C 44), we classify SrO as ductile but SrS, SrSe, and SrTe are brittle material. To our knowledge these are the first quantitative theoretical prediction of the pressure and temperature dependence of mechanical stiffening, thermally softening, and brittle nature of SrX (X = O, S, Se, and Te) and still await experimental confirmations.

  11. Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.

    Science.gov (United States)

    Li, Yi; Zhong, Yingpeng; Zhang, Jinjian; Xu, Lei; Wang, Qing; Sun, Huajun; Tong, Hao; Cheng, Xiaoming; Miao, Xiangshui

    2014-01-01

    Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes, and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development of highly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture. PMID:24809396

  12. Optical properties change in laser-induced Te/As2Se3 chalcogenide thin films

    Science.gov (United States)

    Behera, Mukta; Naik, Ramakanta

    2016-10-01

    In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As2Se3 film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As2Se3 bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As2Se3 matrix was done by 532-nm laser irradiation. The structure of the As2Se3, as-prepared and irradiated Te/As2Se3 films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As2Se3 film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices.

  13. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    Science.gov (United States)

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-01

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

  14. Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

    Science.gov (United States)

    Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

    2016-05-01

    As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes. PMID:27060363

  15. Microorganism mediated biosynthesis of metal chalcogenides; a powerful tool to transform toxic effluents into functional nanomaterials.

    Science.gov (United States)

    Vena, M Paula; Jobbágy, Matías; Bilmes, Sara A

    2016-09-15

    Cadmium contained in soil and water can be taken up by certain crops and aquatic organisms and accumulate in the food-chain, thus removal of Cd from mining or industrial effluents - i.e. Ni-Cd batteries, electroplating, pigments, fertilizers - becomes mandatory for human health. In parallel, there is an increased interest in the production of luminescent Q-dots for applications in bioimaging, sensors and electronic devices, even the present synthesis methods are economic and environmentally costly. An alternative green pathway for producing Metal chalcogenides (MC: CdS, CdSe, CdTe) nanocrystals is based on the metabolic activity of living organisms. Intracellular and extracellular biosynthesis of can be achieved within a biomimetic approach feeding living organisms with Cd precursors providing new routes for combining bioremediation with green routes for producing MC nanoparticles. In this mini-review we present the state-of-the-art of biosynthesis of MC nanoparticles with a critical discussion of parameters involved and protocols. Few existing examples of scaling-up are also discussed. A modular reactor based on microorganisms entrapped in biocompatible mineral matrices - already proven for bioremediation of dissolved dyes - is proposed for combining both Cd-depletion and MC nanoparticle's production. PMID:27157896

  16. Polytypic Nanocrystals of Cu-Based Ternary Chalcogenides: Colloidal Synthesis and Photoelectrochemical Properties.

    Science.gov (United States)

    Wu, Liang; Chen, Shi-You; Fan, Feng-Jia; Zhuang, Tao-Tao; Dai, Chen-Min; Yu, Shu-Hong

    2016-05-01

    Heterocrystalline polytype nanostructured semiconductors have been attracting more and more attention in recent years due to their novel structures and special interfaces. Up to now, controlled polytypic nanostructures are mostly realized in II-VI and III-V semiconductors. Herein, we report the synthesis and photoelectrochemical properties of Cu-based ternary I-III-VI2 chalcogenide polytypic nanocrystals, with a focus on polytypic CuInS2 (CIS), CuInSe2 (CISe), and CuIn(S0.5Se0.5)2 alloy nanocrystals. Each obtained polytypic nanocrystal is constructed with a wurtzite hexagonal column and a zinc blende/chalcopyrite cusp, regardless of the S/Se ratio. The growth mechanisms of polytypic CIS and CISe nanocrystals have been studied by time-dependent experiments. The polytypic nanocrystals are solution-deposited on indium-tin oxide glass substrate and used as a photoelectrode, thus showing stable photoelectrochemical activity in aqueous solution. Density functional theory calculation was used to study the electronic structure and the band gap alignment. This versatile synthetic method provides a new route for synthesis of novel polytypic nanostructured semiconductors with unique properties. PMID:27063512

  17. Non-Newtonian flow of an ultralow-melting chalcogenide liquid in strongly confined geometry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Siyuan; Jain, Chhavi; Wondraczek, Katrin; Kobelke, Jens [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Wondraczek, Lothar [Otto Schott Institute of Material Research (OSIM), Friedrich Schiller University Jena, Fraunhoferstr. 6, 07743 Jena (Germany); Troles, Johann; Caillaud, Celine [Université de Rennes I, Equipe Verres et Céramiques, UMR 6226 Sciences Chimiques de Rennes, Campus de Beaulieu, 35042 Rennes (France); Schmidt, Markus A., E-mail: markus.schmidt@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Otto Schott Institute of Material Research (OSIM), Friedrich Schiller University Jena, Fraunhoferstr. 6, 07743 Jena (Germany)

    2015-05-18

    The flow of high-viscosity liquids inside micrometer-size holes can be substantially different from the flow in the bulk, non-confined state of the same liquid. Such non-Newtonian behavior can be employed to generate structural anisotropy in the frozen-in liquid, i.e., in the glassy state. Here, we report on the observation of non-Newtonian flow of an ultralow melting chalcogenide glass inside a silica microcapillary, leading to a strong deviation of the shear viscosity from its value in the bulk material. In particular, we experimentally show that the viscosity is radius-dependent, which is a clear indication that the microscopic rearrangement of the glass network needs to be considered if the lateral confinement falls below a certain limit. The experiments have been conducted using pressure-assisted melt filling, which provides access to the rheological properties of high-viscosity melt flow under previously inaccessible experimental conditions. The resulting flow-induced structural anisotropy can pave the way towards integration of anisotropic glasses inside hybrid photonic waveguides.

  18. All-optical demultiplexing of 1.28~Tb/s to 10~Gb/s using a chalcogenide photonic chip

    DEFF Research Database (Denmark)

    Vo, T.D.; Hu, Hao; Galili, Michael;

    2010-01-01

    We report the first demonstration of all-optical Tbaud switching on a compact photonic chip. A 1.28 Tbaud return-to-zero signal was demultiplexed via four-wave mixing in a highly nonlinear, dispersion-engineered 7-cm Chalcogenide planar waveguide.......We report the first demonstration of all-optical Tbaud switching on a compact photonic chip. A 1.28 Tbaud return-to-zero signal was demultiplexed via four-wave mixing in a highly nonlinear, dispersion-engineered 7-cm Chalcogenide planar waveguide....

  19. A first principles study of phase stability, bonding, electronic and lattice dynamical properties of beryllium chalcogenides at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar 364001 (India); Mankad, Venu [Central Institute of Plastic Engineering and Technology, Ahmedabad (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390002 (India)

    2014-12-25

    Highlights: • First principles calculations are performed for BeS, BeSe and BeTe in B3, B8 and B1 phases. • They are indirect wide band gap semiconductors stable in B3 phase at ambient condition. • Phonon calculations at ambient and high pressure are reported. • The NiAs phase is dynamically stable at high pressure. - Abstract: The present paper reports a detailed and systematic theoretical study of structural, mechanical, electronic, vibrational and thermodynamical properties of three beryllium chalcogenides BeS, BeSe and BeTe in zinc blende, NiAs and rock salt phases by performing ab initio calculations based on density-functional theory. The calculated value of lattice constants and bulk modulus are compared with the available experimental and other theoretical data and found to agree reasonably well. These compounds are indirect wide band gap semiconductors with a partially ionic contribution in all considered three phases. The zinc blende phase of these chalcogenides is found stable at ambient condition and phase transition from zinc blende to NiAs structure is found to occur. The bulk modulus, its pressure derivative, anisotropic factor, Poission’s ratio, Young’s modulus for these are also calculated and discussed. The phonon dispersion curves of these beryllium chalcogenides in zinc blende phase depict their dynamical stability in this phase at ambient condition. We have also estimated the temperature variation of specific heat at constant volume, entropy and Debye temperature for these compounds in zinc blende phase. The variation of lattice-specific heat with temperature obeys the classical Dulong–Petit’s law at high temperature, while at low-temperature it obeys the Debye’s T{sup 3} law.

  20. Experimental demonstration of linearly polarized 2-10  μm supercontinuum generation in a chalcogenide rib waveguide.

    Science.gov (United States)

    Yu, Yi; Gai, Xin; Ma, Pan; Vu, Khu; Yang, Zhiyong; Wang, Rongping; Choi, Duk-Yong; Madden, Steve; Luther-Davies, Barry

    2016-03-01

    This Letter reports the production of a supercontinuum extending from ≈2  μm to >10  μm generated using a chalcogenide buried rib waveguide pumped with 330 femtosecond pulses at 4.184 μm. This is, to the best of our knowledge, the broadest mid-infrared supercontinuum generated in any planar waveguide platform. Because the waveguide is birefringent, quasi-single-mode, and uses an optimized dispersion design, the supercontinuum is linearly polarized with an extinction ratio >100. Dual beam spectrophotometry is performed easily using this source. PMID:26974090

  1. Photonic-chip-based all-optical ultra-wideband pulse generation via XPM and birefringence in a chalcogenide waveguide.

    Science.gov (United States)

    Tan, Kang; Marpaung, David; Pant, Ravi; Gao, Feng; Li, Enbang; Wang, Jian; Choi, Duk-Yong; Madden, Steve; Luther-Davies, Barry; Sun, Junqiang; Eggleton, Benjamin J

    2013-01-28

    We report a photonic-chip-based scheme for all-optical ultra-wideband (UWB) pulse generation using a novel all-optical differentiator that exploits cross-phase modulation and birefringence in an As₂S₃ chalcogenide rib waveguide. Polarity-switchable UWB monocycles and doublets were simultaneously obtained with single optical carrier operation. Moreover, transmission over 40-km fiber of the generated UWB doublets is demonstrated with good dispersion tolerance. These results indicate that the proposed approach has potential applications in multi-shape, multi-modulation and long-distance UWB-over-fiber communication systems.

  2. Electrospray deposition of chalcogenide glass films for gradient refractive index and quantum dot incorporation

    Science.gov (United States)

    Novak, Spencer

    Chalcogenide glasses (ChGs) are well-known for their optical properties, making them ideal candidates for emerging applications of mid-infrared microphotonic devices, such as lab-on-a-chip chemical sensing devices, which currently demand additional flexibility in processing and materials available to realize new device designs. Solution-derived processing of ChG films, initially developed in the 1980s by Chern and Lauks, has consisted mainly of spin-coating and offers unique advantages over the more traditional physical vapor deposition techniques. In the present effort, the nanoparticles of interest are luminescent quantum dots (QDs), which can be used as an on-chip source of light for a planar chemical sensing device. Prior efforts of QD incorporation have exposed limitations of spin-coating of ChG solutions, namely QD aggregation and material waste, along with incompatibility with larger scale manufacturing methods such roll-to-roll processing. This dissertation has evaluated electrospray (ES) as an alternative method of solution-derived chalcogenide glass film deposition. While employed in other materials systems, deposition of optical quality ChG films via electrospray has not been previously attempted, nor have parameters until now, been defined. This study has defined pre-cursor solution chemistry, electrospray jet process parameters required for formation of stable films, annealing protocols and resulting film attributes, yielding important correlations needed to realize high optical quality films. Electrosprayed films attributes were compared to those seen for spin coating and trade-offs in processing route and resulting quality, were identified. Optical properties of importance to device applications were defined, including surface roughness, refractive index, and infrared transmission. The use of a serpentine path of the spray over the substrate was demonstrated to obtain uniform thickness, blanket films, and demonstrates process compatibility with roll

  3. Penternary chalcogenides nanocrystals as catalytic materials for efficient counter electrodes in dye-synthesized solar cells

    Science.gov (United States)

    Özel, Faruk; Sarılmaz, Adem; İstanbullu, Bilal; Aljabour, Abdalaziz; Kuş, Mahmut; Sönmezoğlu, Savaş

    2016-01-01

    The penternary chalcogenides Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 were successfully synthesized by hot-injection method, and employed as a catalytic materials for efficient counter electrodes in dye-synthesized solar cells (DSSCs). The structural, compositional, morphological and optical properties of these pentenary semiconductors were characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), energy-dispersive spectrometer (EDS) and ultraviolet-visible (UV–Vis) spectroscopy. The Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 nanocrystals had a single crystalline, kesterite phase, adequate stoichiometric ratio, 18–25 nm particle sizes which are forming nanospheres, and band gap energy of 1.18 and 1.45 eV, respectively. Furthermore, the electrochemical impedance spectroscopy and cyclic voltammograms indicated that Cu2CoSn(SeS)4 nanocrystals as counter electrodes exhibited better electrocatalytic activity for the reduction of iodine/iodide electrolyte than that of Cu2ZnSn(SeS)4 nanocrystals and conventional platinum (Pt). The photovoltaic results demonstrated that DSSC with a Cu2CoSn(SeS)4 nanocrystals-based counter electrode achieved the best efficiency of 6.47%, which is higher than the same photoanode employing a Cu2ZnSn(SeS)4 nanocrystals (3.18%) and Pt (5.41%) counter electrodes. These promising results highlight the potential application of penternary chalcogen Cu2CoSn(SeS)4 nanocrystals in low-cost, high-efficiency, Pt-free DSSCs. PMID:27380957

  4. Penternary chalcogenides nanocrystals as catalytic materials for efficient counter electrodes in dye-synthesized solar cells.

    Science.gov (United States)

    Özel, Faruk; Sarılmaz, Adem; İstanbullu, Bilal; Aljabour, Abdalaziz; Kuş, Mahmut; Sönmezoğlu, Savaş

    2016-01-01

    The penternary chalcogenides Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 were successfully synthesized by hot-injection method, and employed as a catalytic materials for efficient counter electrodes in dye-synthesized solar cells (DSSCs). The structural, compositional, morphological and optical properties of these pentenary semiconductors were characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), energy-dispersive spectrometer (EDS) and ultraviolet-visible (UV-Vis) spectroscopy. The Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 nanocrystals had a single crystalline, kesterite phase, adequate stoichiometric ratio, 18-25 nm particle sizes which are forming nanospheres, and band gap energy of 1.18 and 1.45 eV, respectively. Furthermore, the electrochemical impedance spectroscopy and cyclic voltammograms indicated that Cu2CoSn(SeS)4 nanocrystals as counter electrodes exhibited better electrocatalytic activity for the reduction of iodine/iodide electrolyte than that of Cu2ZnSn(SeS)4 nanocrystals and conventional platinum (Pt). The photovoltaic results demonstrated that DSSC with a Cu2CoSn(SeS)4 nanocrystals-based counter electrode achieved the best efficiency of 6.47%, which is higher than the same photoanode employing a Cu2ZnSn(SeS)4 nanocrystals (3.18%) and Pt (5.41%) counter electrodes. These promising results highlight the potential application of penternary chalcogen Cu2CoSn(SeS)4 nanocrystals in low-cost, high-efficiency, Pt-free DSSCs. PMID:27380957

  5. Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Adam, Adam Abdalla Elbashir [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China); Alneelain University, Faculty of Science and Technology, Khartoum (Sudan); Cheng, Xiaomin; Guan, Xiawei; Miao, Xiangshui [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China)

    2014-12-15

    In this work, an effective method to modulate the ferromagnetic properties of Mn-doped GeTe chalcogenide-based phase change materials is presented. The microstructure of the phase change magnetic material Ge{sub 1-x} Mn{sub x} Te thin films was studied. The X-ray diffraction results demonstrate that the as-deposited films are amorphous, and the crystalline films are formed after annealing at 350 C for 10 min. Crystallographic structure investigation shows the existence of some secondary magnetic phases. The lattice parameters of Ge{sub 1-x} Mn{sub x} Te (x = 0.04, 0.12 and 0.15) thin films are found to be slightly different with changes of Mn compositions. The structural analysis clearly indicates that all the films have a stable rhombohedral face-centered cubic polycrystalline structure. The magnetic properties of the amorphous and crystalline Ge{sub 0.96}Mn{sub 0.04}Te were investigated. The measurements of magnetization (M) as a function of the magnetic field (H) show that both amorphous and crystalline phases of Ge{sub 0.96}Mn{sub 0.04}Te thin film are ferromagnetic and there is drastic variation between amorphous and crystalline states. The temperature (T) dependence of magnetizations at zero field cooling (ZFC) and field cooling (FC) conditions of the crystalline Ge{sub 0.96}Mn{sub 0.04}Te thin film under different applied magnetic fields were performed. The measured data at 100 and 300 Oe applied magnetic fields show large bifurcations in the ZFC and FC curves while on the 5,000 Oe magnetic field there is no deviation. (orig.)

  6. New chalcogenide glasses in the CdTe–AgI–As2Te3 system

    International Nuclear Information System (INIS)

    Highlights: ► Determination of the glass-forming region in the pseudo-ternary CdTe–AgI–As2Te3 system. ► Characterization of macroscopic properties of the new CdTe–AgI–As2Te3 glasses. ► Characterization of the total conductivity of CdTe–AgI–As2Te3 glasses. ► Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe–AgI–As2Te3 system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI–As2Te3 glasses towards crystallisation is estimated to be decreasing on the base of ΔT = Tx − Tg parameter. The total electrical conductivity σ was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI)0.5(As2Te3)0.5 host glass, (CdTe)x(AgI)0.5−x/2(As2Te3)0.5−x/2 lead to a conductivity decrease at x ≤ 0.05. Then, the behaviour is reversed at 0.05 ≤ x ≤ 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  7. Penternary chalcogenides nanocrystals as catalytic materials for efficient counter electrodes in dye-synthesized solar cells

    Science.gov (United States)

    Özel, Faruk; Sarılmaz, Adem; Istanbullu, Bilal; Aljabour, Abdalaziz; Kuş, Mahmut; Sönmezoğlu, Savaş

    2016-07-01

    The penternary chalcogenides Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 were successfully synthesized by hot-injection method, and employed as a catalytic materials for efficient counter electrodes in dye-synthesized solar cells (DSSCs). The structural, compositional, morphological and optical properties of these pentenary semiconductors were characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), energy-dispersive spectrometer (EDS) and ultraviolet-visible (UV–Vis) spectroscopy. The Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 nanocrystals had a single crystalline, kesterite phase, adequate stoichiometric ratio, 18–25 nm particle sizes which are forming nanospheres, and band gap energy of 1.18 and 1.45 eV, respectively. Furthermore, the electrochemical impedance spectroscopy and cyclic voltammograms indicated that Cu2CoSn(SeS)4 nanocrystals as counter electrodes exhibited better electrocatalytic activity for the reduction of iodine/iodide electrolyte than that of Cu2ZnSn(SeS)4 nanocrystals and conventional platinum (Pt). The photovoltaic results demonstrated that DSSC with a Cu2CoSn(SeS)4 nanocrystals-based counter electrode achieved the best efficiency of 6.47%, which is higher than the same photoanode employing a Cu2ZnSn(SeS)4 nanocrystals (3.18%) and Pt (5.41%) counter electrodes. These promising results highlight the potential application of penternary chalcogen Cu2CoSn(SeS)4 nanocrystals in low-cost, high-efficiency, Pt-free DSSCs.

  8. Layered Chalcogenides beyond Graphene: from Electronic Structure Evolution to the Spin Transport

    Science.gov (United States)

    Yuan, Hongtao

    2014-03-01

    Recent efforts on graphene-like atomic layer materials, aiming at novel electronic properties and quantum phenomena beyond graphene, have attracted much attention for potential electronics/spintronics applications. Compared to the weak spin-orbit-interaction (SOI) in graphene, metal chalcogenides MX2 have heavy 4d/5d elements with strong atomic SOI, providing a unique way for generating spin polarization based on valleytronics physics. Indeed, such a spin-polarized band structure has been demonstrated theoretically and supported by optical investigations. However, despite these exciting progresses, following two important issues in MX2 community remain elusive: 1. the quantitative band structure of MX2 compounds (where are the valleys -band maxima/minima- locating in the BZ) have not been experimentally confirmed. Especially for those cleaved ultrathin mono- and bi-layer flakes hosting most of recently-reported exotic phenomena at the 2D limit, the direct detection for band dispersion becomes of great importance for valleytronics. 2. Spin transports have seldom been reported even though such a strong SOI system can serve as an ideal platform for the spin polarization and spin transport. In this work, we started from the basic electronic structures of representative MX2, obtained by ARPES, and investigated both the band variation between these compounds and their band evolution from bulk to the monolayer limit. After having a systematic understanding on band structures, we reported a giant Zeeman-type spin-polarization generated and modulated by an external electric field in WSe2 electric-double-layer transistors. The non-magnetic approach for realizing such an intriguing spin splitting not only keeps the system time-reversally invariant but also suggests a new paradigm for manipulating the spin-degrees of freedom of electrons. Acknowledge the support from DoE, BES, Division of MSE under contract DE-AC02-76SF00515.

  9. Single-Crystal Electrical Resistivities of Some Ta-Rich Chalcogenides

    Science.gov (United States)

    Ahn, Kyungsoo; Hughbanks, Timothy

    1993-02-01

    Vapor phase transport synthesis of several Ta-rich chalcogenides affords us good single crystals for four-probe measurements of their electrical resistivities. A comparison of the temperature dependent resistivities of Ta2S and Ta3S2 show that the latter compound is a considerably poorer conductor for all temperatures from 15 to 270 K, as predicted in our earlier band structure study of these materials and consistent with the recent work of Nozaki and coworkers. In both cases, resistivities were measured along the direction parallel to the 1x [Ta5Ta] chains that serve as these materials' basic structural building blocks. The compounds Ta9M2S6 (M = Fe, Co, Ni) show normal metallic behavior over the same range of temperatures. A distortion that leads to a doubling of the c-axis length for the Fe and Co containing compounds seems to have no significant effect on the electronic density of states at the Fermi level in either material. In contrast, the compounds Ta11M2Se8 (M = Fe, Co, Ni) exhibit markedly different resistivities as a function of temperature. While Ta11Fe2Se8 and Ta11Ni2Se8 behave much like the structurally similar Ta9M2S6 compounds, the resistivity of Ta11Co2Se8 shows a curiously weak temperature dependence and a high residual value at the lowest temperatures of measurement (15 K). Powder diffraction data for this compound suggests that crystals prepared at low temperature have lower symmetry than the Pnnm space group originally reported.

  10. Design and Growth of Novel Compounds for Radiation Sensors: Multinary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Su, Ching-Hua; Nagaradona, Teja; Arnold, Brad; Choa, Fow-Sen

    2016-01-01

    Increasing threats of radiological weapons have revitalized the researches for low cost large volume ?-ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage. A low thermal gradient and high purity source material were used to reduce thermal stresses in large crystals. By improving the purification of the as supplied source materials very high quality thallium, selenium and arsenic was achieved for preparing stoichiometric Tl3AsSe3 compound. Low gradient (5cm/day) showed very different morphologies on the surface of the crystals. Electrical resistivity was one order of magnitude higher than previously reported value and it was observed to be constant as the function of frequency.

  11. Compositional-tailoring of optical properties in IR transparent chalcogenide glasses for precision glass molding

    Science.gov (United States)

    Gleason, B.; Wachtel, P.; Musgraves, J. D.; Qiao, A.; Anheier, N.; Richardson, K.

    2013-09-01

    The structural and optical properties of AsSe chalcogenide glass, starting with As40Se60, were studied as a function of Ge or Se additions. These elements provide broad glass forming options when combined with the host matrix to allow for compositional tuning of properties. Optimization of glass composition has been shown to produce bulk glasses with a thermoptic coefficient (dn/dT) equal to zero, as well as a composition which could demonstrate a net zero change in index after precision glass molding (PGM). The bulk glass density, coefficient of thermal expansion (CTE), refractive index, and dn/dT were measured for all bulk compositions, as was the refractive index after PGM. For the bulk glasses examined, both the refractive index (measured at discrete laser wavelengths from 3.4 to10.6 μm) and dn/dT were observed to decrease as the molecular percentage of either Ge or Se is increased. Compared to the starting glass' network, additions of either Ge or Se lead to a deviation from the "optimally constrained" binary glass' average coordination number = 2.4. Additions of Se or Ge serve to decrease or increase the average coordination number (CN) of the glass, respectively, while also changing the network's polarizability. After a representative PGM process, glasses exhibited an "index drop" consistent with that seen for oxide glasses.1 Based on our evaluation, both the Gecontaining and Ge-free tielines show potential for developing unique compositions with either a zero dn/dT for the unmolded, bulk glass, as well as the potential for a glass that demonstrates a net zero "index drop" after molding. Such correlation of glass chemistry, network, physical and optical properties will enable the tailoring of novel compositions suitable for prototyping towards targeted molding behavior and final properties.

  12. Effect of Sn doping on nonlinear optical properties of quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-08-01

    The aim of this work is to report the effect of Sn doping on the third order nonlinear optical properties of chalcogenide Se84-xTe15Bi1.0Snx thin films. Melt quenching technique has been used for the preparation of bulk chalcogenide glasses. Thin films of the studied composition are deposited on cleaned glass substrate by thermal evaporation technique. Optical band gap (Eg) is calculated by using Tauc extrapolation method and is found to increase from 1.27 eV to 1.64 eV with the incorporation of Sn content. Stryland approach is utilized for the calculation of two photon absorption coefficient (β2). The nonlinear refractive index (n2) and third order susceptibility (χ(3) are calculated using Tichy and Ticha approach. The result shows that nonlinear refractive index (n2) follows the same trend as that of linear refractive index (n). The values of n2 of studied composition as compared to pure silica are 1000-5000 times higher.

  13. Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

    International Nuclear Information System (INIS)

    Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As2S3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As4+; S1-) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As2S3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Mid-IR supercontinuum generation beyond 7 μm using a silica-fluoride-chalcogenide fiber cascade

    DEFF Research Database (Denmark)

    Petersen, Christian Rosenberg; Moselund, Peter M.; Petersen, Christian;

    2016-01-01

    We report on an experimental demonstration of mid-infrared cascaded supercontinuum generation in commercial silica, fluoride, and chalcogenide fibers as a potentially cheap and practical alternative to direct pumping schemes. A pump continuum up to 4.4 μm was generated in cascaded silica and fluo......We report on an experimental demonstration of mid-infrared cascaded supercontinuum generation in commercial silica, fluoride, and chalcogenide fibers as a potentially cheap and practical alternative to direct pumping schemes. A pump continuum up to 4.4 μm was generated in cascaded silica...... and fluoride fibers by an amplified 1.55 μm nanosecond diode laser. By pumping a commercial Ge10As22Se68 single-material photonic crystal fiber with 135.7 mW of the pump continuum from 3.5- 4.4 μm, we obtained a continuum up to 7.2 μm with a total output power after the collimating lens of 54.5 mW, and 3.7 m...

  15. Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, Oleh [Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, 42200, Czestochowa (Poland); Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Filipecki, Jacek [Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Shpotyuk, Mykhaylo [Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Department of Semiconductor Electronics, Lviv Polytechnic National University, Bandery str. 12, 79013 Lviv (Ukraine)

    2013-01-15

    Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As{sub 2}S{sub 3} chalcogenide glassy semiconductors after {gamma}-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As{sub 4}{sup +}; S{sub 1}{sup -}) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As{sub 2}S{sub 3} is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Hierarchical active factors to band gap and nonlinear optical response in Ag-containing quaternary-chalcogenide compounds

    Science.gov (United States)

    Huang, Jun-ben; Mamat, Mamatrishat; Pan, Shilie; Yang, Zhihua

    2016-07-01

    In this research work, Ag-containing quaternary-chalcogenide compounds KAg2TS4 (T=P, Sb) (I-II) and RbAg2SbS4 (III) have been studied by means of Density Functional Theory as potential IR nonlinear optical materials. The origin of wide band gap, different optical anisotropy and large SHG response is explained via a combination of density of states, electronic density difference and bond population analysis. It is indicated that the different covalent interaction behavior of P-S and Sb-S bonds dominates the band gap and birefringence. Specifically, the Ag-containing chalcogenide compound KAg2PS4 possesses wide band gap and SHG response comparable with that of AgGaS2. By exploring the origin of the band gap and NLO response for compounds KAg2TS4 (T=P, Sb), we found the determination factor to the properties is different, especially the roles of Ag-d orbitals and bonding behavior of P-S or Sb-S. Thus, the compounds KAg2TS4 (T=P, Sb) and RbAg2SbS4 can be used in infrared (IR) region.

  17. Experimental observation of incoherent-coherent crossover and orbital-dependent band renormalization in iron chalcogenide superconductors

    Science.gov (United States)

    Liu, Z. K.; Yi, M.; Zhang, Y.; Hu, J.; Yu, R.; Zhu, J.-X.; He, R.-H.; Chen, Y. L.; Hashimoto, M.; Moore, R. G.; Mo, S.-K.; Hussain, Z.; Si, Q.; Mao, Z. Q.; Lu, D. H.; Shen, Z.-X.

    2015-12-01

    The level of electronic correlation has been one of the key questions in understanding the nature of superconductivity. Among the iron-based superconductors, the iron chalcogenide family exhibits the strongest electron correlations. To gauge the correlation strength, we performed a systematic angle-resolved photoemission spectroscopy study on the iron chalcogenide series Fe1 +ySexTe1 -x (0

  18. First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

    Science.gov (United States)

    Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D.

    2016-08-01

    Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger [Phys. Rev. Lett. 108, 068701 (2012)] is used as a metric for the screening. After constructing the current-voltage curve, the SLME is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with II = Cd and Hg, and Cu2-II-SnS4 with II = Cd, Hg, and Zn have a higher theoretical efficiency compared with the materials currently used as absorber layer.

  19. Nonlinear Label-Free Biosensing With High Sensitivity Using As2S3 Chalcogenide Tapered Fiber

    DEFF Research Database (Denmark)

    Markos, Christos; Bang, Ole

    2015-01-01

    We demonstrate an experimentally feasible fiber design, which can act as a highly sensitive, label-free, and selective biosensor using the inherent high nonlinearity of an As2S3 chalcogenide tapered fiber. The surface immobilization of the fiber with an antigen layer can provide the possibility t......, this high sensitivity can be obtained using a low-power 1064-nm microchip laser....

  20. Extraction and recovery of mercury and lead from aqueous waste streams using redox-active layered metal chalcogenides. Annual progress report, September 15, 1996 - September 14, 1997

    International Nuclear Information System (INIS)

    'The authors have begun to examine the extraction and recovery of heavy elements from aqueous waste streams using redox-active metal chalcogenides. They have been able to prepare extractants from known chalcogenide starting materials, studied the efficacy of the extractants for selective removal of soft metal ions from aqueous phases, studied the deactivation of extractants and the concomitant recovery of soft metal ions from the extractants, and characterized all of the solids and solutions thus far in the study. The study was proposed as two parallel tasks: Part 1 and Part 2 emphasize the study and development of known metal chalcogenide extractants and the synthesis and development of new metal chalcogenide extractants, respectively. The two tasks were divided into sub-sections that study the extractants and their chemistry as detailed below: Preparation and reactivity of metal chalcogenide host solids Extraction of target waste (guest) ions from simulated waste streams Examination of the guest-host solids recovery of the guest metal and reuse of extractant Each section of the two tasks was divided into focused subsections that detail the specific problems and solutions to those problems that were proposed. The extent to which those tasks have been accomplished and the continued efforts of the team are described in detail below. (b) Progress and Results. The DOE-supported research has proceeded largely as proposed and has been productive in its first 12 months. Two full-paper manuscripts were submitted and are currently under peer review. A third paper is in preparation and will be submitted shortly. In addition, 5 submitted or invited presentations have been made.'

  1. Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

  2. Electron-phonon coupling and structural phase transitions in early transition metal oxides and chalcogenides

    Science.gov (United States)

    Farley, Katie Elizabeth

    Pronounced nonlinear variation of electrical transport characteristics as a function of applied voltage, temperature, magnetic field, strain, or photo-excitation is usually underpinned by electronic instabilities that originate from the complex interplay of spin, orbital, and lattice degrees of freedom. This dissertation focuses on two canonical materials that show pronounced discontinuities in their temperature-dependent resistivity as a result of electron---phonon and electron---electron correlations: orthorhombic TaS3 and monoclinic VO2. Strong electron-phonon interactions in transition metal oxides and chalcogenides results in interesting structural and electronic phase transitions. The properties of the material can be changed drastically in response to external stimuli such as temperature, voltage, or light. Understanding the influence these interactions have on the electronic structure and ultimately transport characteristics is of utmost importance in order to take these materials from a fundamental aspect to prospective applications such as low-energy interconnects, steep-slope transistors, and synaptic neural networks. This dissertation describes synthetic routes to nanoscale TaS3 and VO2, develops mechanistic understanding of their electronic instabilities, and in the case of the latter system explores modulation of the electronic and structural phase transition via the incorporation of substitutional dopant atoms. We start in chapter 2 with a detailed study of the synthesis and electronic transport properties of TaS3, which undergoes a Peierls' distortion to form a charge density wave. Scaling this material down to the nanometer-sized regime allows for interrogation of single or discrete phase coherent domains. Using electrical transport and broad band noise measurements, the dynamics of pinning/depinning of the charge density wave is investigated. Chapter 3 provides a novel synthetic approach to produce high-edge-density MoS2 nanorods. MoS2 is a

  3. Structure, ionic Conductivity and mobile Carrier Density in Fast Ionic Conducting Chalcogenide Glasses

    International Nuclear Information System (INIS)

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x (le) 0.2) glasses by neutron and synchrotron x-ray diffraction. Similar results were obtained both in neutron and synchrotron x-ray diffraction experiments. The results provide direct structural evidence that doping

  4. Colloidal chemical synthesis and formation kinetics of uniformly sized nanocrystals of metals, oxides, and chalcogenides.

    Science.gov (United States)

    Kwon, Soon Gu; Hyeon, Taeghwan

    2008-12-01

    nanoparticles of copper and nickel using metal(II) acetylacetonates. Ni/Pd core/shell nanoparticles were synthesized by simply heating the reaction mixture composed of acetylacetonates of nickel and palladium. Using alternative chalcogen reagents, we synthesized uniform nanocrystals of various metal chalcogenides. Uniform nanocrystals of PbS, ZnS, CdS, and MnS were obtained by heating reaction mixtures composed of metal chlorides and sulfur dissolved in oleylamine. In the future, a detailed understanding of nanocrystal formation kinetics and synthetic chemistry will lead to the synthesis of uniform nanocrystals with controlled size, shape, and composition. In particular, the synthesis of uniform nanocrystals of doped materials, core/shell materials, and multicomponent materials is still a challenge. We expect that these uniformly sized nanocrystals will find important applications in areas including information technology, biomedicine, and energy/environmental technology. PMID:18681462

  5. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  6. Chalcogenide glass mid-infrared on-chip sensor for chemical sensing

    Science.gov (United States)

    Lin, Hongtao

    Chemical sensing in the mid-infrared (mid-IR) has been considered to be significant for molecular detection for decades, but until recently has mostly relied on benchtop spectroscopic instruments like Fourier transform infrared spectrometers, etc. Recent strides in planar photonic integration envision compact, standalone "sensor-on-a-chip" devices for molecular analysis as a potentially disruptive technology as compared to their conventional bulky counterparts. However, the difficulty of achieving adequate sensitivity in integrated optical sensors is still a key barrier towards their practical application, limited by the weak interactions between photons and molecules over the short optical path length accessible on a chip. To solve the sensitivity challenge, a novel mid-IR photothermal spectroscopic sensing technique was proposed and theoretically examined. Through dramatically amplified photothermal effects in an optical nano-cavity doubly resonant at both mid-IR pump and near infrared probe wavelengths, a device design based on nested 1-D nanobeam photonic crystal cavities is numerically analyzed to demonstrate the technique's potential for single small gas molecule detection without the need for cryogenically cooled mid-IR photo-detectors. Furthermore, since silica becomes opaque at wavelengths beyond 3.5 microm, new material platforms and fabrication techniques are needed for mid-IR on-chip chemical sensors. Chalcogenide glasses (ChG), amorphous compounds containing S, Se and Te, are ideal material choices for mid-IR chemical sensors given their broad mid-IR transparency window, large photothermal figure-of-merit, amorphous structure and low processing temperature. A ChG lift-off process and a nano-fabrication technique using focused ion beam milling have been developed to fabricate mid-IR ChG resonators and photonic crystal waveguide cavities. ChG resonators on CaF2 substrate claimed a high quality factor around 4 x 105. Using these devices, we have also

  7. Spin dynamics of complex oxides, bismuth-antimony alloys, and bismuth chalcogenides

    Science.gov (United States)

    Sahin, Cuneyt

    V, suggesting the potential for doping or voltage tuned spin Hall current. We have also calculated intrinsic spin Hall conductivities of bismuth selenide and bismuth telluride topological insulators from an effective tight-binding Hamiltonian including two nearest-neighbor interactions. We showed that both materials exhibit giant spin Hall conductivities calculated from the Kubo formula in linear response theory and the clean static limit. We conclude that bismuth-antimony alloys and bismuth chalcogenides are primary candidates for efficiently generating spin currents through the spin Hall effect.

  8. Radiation stimulated changes in the transmission of chalcogenide glasses As2S3-Ge2S3

    International Nuclear Information System (INIS)

    The radiation - optical properties of chalcogenide glass-like semiconductors systems As2S3-Ge2S3 in the field of topological 2D-3D of phase transition are investigated. It is shown, that a gamma irradiation by an absorbed doze 4.4·106 Gy results in long-wave shift of a spectral position of their edge of optical passing. The observable effect depends on a structural type of researched glasses and essentially varies near to 2D-3D of phase transition. Two making shifts of an edge of passing are detected: static, remaining a constant long time after irradiation and dynamic, gradually damping during 2-3 months. It is supposed, that the microstructural mechanism of the data changes is stipulated by processes coordination defect creation in a structural framework of samples

  9. Extended free-volume defects in chalcogenide glassy semiconductors induced by high-energy γ-irradiation

    International Nuclear Information System (INIS)

    It was shown that under-coordinated topological defects induced by high-energy γ-irradiation can be a reason for significant changes in positron annihilation lifetime spectra of multicomponent chalcogenide glassy semiconductors within ternary Ge-As(Sb)-S systems. In the case of negatively-charged sulphur and arsenic atoms, the excess of free volume is quite enough to produce additional input in the second defect-related channel of positron trapping, while under-coordinated germanium atoms are practically non-detectable with this technique because of low associated free volume. Despite radiation-induced densification, the average positron lifetime demonstrate both growing and decaying tendencies after γ-irradiation depending on glass composition. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Mid-IR supercontinuum generation beyond 7 μm using a silica-fluoride-chalcogenide fiber cascade

    Science.gov (United States)

    Petersen, Christian R.; Moselund, Peter M.; Petersen, Christian; Møller, Uffe; Bang, Ole

    2016-03-01

    We report on an experimental demonstration of mid-infrared cascaded supercontinuum generation in commercial silica, fluoride, and chalcogenide fibers as a potentially cheap and practical alternative to direct pumping schemes. A pump continuum up to 4.4 μm was generated in cascaded silica and fluoride fibers by an amplified 1.55 μm nanosecond diode laser. By pumping a commercial Ge10As22Se68 single-material photonic crystal fiber with 135.7 mW of the pump continuum from 3.5- 4.4 μm, we obtained a continuum up to 7.2 μm with a total output power after the collimating lens of 54.5 mW, and 3.7 mW above 4.5 μm.

  11. Extended free-volume defects in chalcogenide glassy semiconductors induced by high-energy {gamma}-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, Valentina [Lviv Institute of Materials of SRC (Ukraine); State University of Vital Activity Safety, Lviv 79007 (Ukraine); Filipecki, Jacek; Shpotyuk, Oleh [Institute of Physics, Jan Dlugosz University, Czestochowa (Poland)

    2009-08-15

    It was shown that under-coordinated topological defects induced by high-energy {gamma}-irradiation can be a reason for significant changes in positron annihilation lifetime spectra of multicomponent chalcogenide glassy semiconductors within ternary Ge-As(Sb)-S systems. In the case of negatively-charged sulphur and arsenic atoms, the excess of free volume is quite enough to produce additional input in the second defect-related channel of positron trapping, while under-coordinated germanium atoms are practically non-detectable with this technique because of low associated free volume. Despite radiation-induced densification, the average positron lifetime demonstrate both growing and decaying tendencies after {gamma}-irradiation depending on glass composition. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. General principles of the synthesis of chalcogenides and pnictides in salt melts using a steady-state temperature gradient

    Science.gov (United States)

    Chareev, D. A.

    2016-05-01

    The possibilities of growing crystals of metals, alloys, chalcogenides, and pnictides in halide melts using a steady-state temperature gradient are analyzed. Halides of alkali metals and aluminum can be used as transport media. The choice is determined by the melting temperature of salt mixtures. A conducting contour can also be applied to increase transport efficiency. This technique of crystal growth is similar to the electrochemical method. To eliminate interference during migration, some elements can be isolated and forced to migrate through independent channels to the crystal formation region. The technique considered here makes it possible to grow crystals of necessary quality without special equipment; the small crystal sizes are sufficient for laboratory study.

  13. A projection operator approach for computing the dynamics of AS2S3 chalcogenide birefringent photonic crystal fiber coupler

    Science.gov (United States)

    Uthayakumar, T.; Vasantha Jayakantha Raja, R.; Porsezian, K.

    2015-02-01

    A variety of AS2S3 chalcogenide photonic crystal fiber coupler of special properties are proposed to study the role of birefringence in all optical coupling characteristics based on the projection operator method (POM). The equations of motion describing the dynamics of the individual pulse parameters through x- and y-polarized modes are arrived at by employing POM from the coupled nonlinear Schrödinger equations. From the pulse parameter dynamics, it is observed that the amplitudes of the polarization components are significantly influenced by the pulse being introduced with different polarizing angle even at low input power level. Such a selective polarizing angles of the input pulse will provide efficient control over the desired splitting ratio as well as the ability to decide the desired polarization component.

  14. KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

    KAUST Repository

    Ahmed, Ejaz

    2015-01-01

    The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

  15. Magnetic structure of TlFeS{sup 2} and TlFeSe{sup 2} chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Asgerov, E. B., E-mail: elmar@jinr.ru [Joint Institute for Nuclear Research (Russian Federation); Dang, N. T. [Duy Tan University, Institute of Research and Development (Viet Nam); Beskrovnyy, A. I.; Madadzada, A. I. [Joint Institute for Nuclear Research (Russian Federation); Ismayilov, D. I. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan); Mehdiyeva, R. N. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan); Jabarov, S. H. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan); Karimova, E. M. [Universitet Bayreuth, Bayerisces Geoinstitut (Germany)

    2015-07-15

    The crystal and magnetic structures of TlFeS{sup 2} and TlFeSe{sup 2} chalcogenides are studied by neutron diffraction in the temperature range 10–300 K. The investigated compounds feature monoclinic crystal symmetry with the C2/m space group. Antiferromagnetic ordering occurs in TlFeS{sup 2} and TlFeSe{sup 2} at the Néel temperature T{sup N} = 210(5) and 295(5) K, respectively. The temperature dependences of magnetic moments, Fe–Fe bond lengths, and unit-cell volume are established. The coefficients of thermal expansion for the paramagnetic and antiferromagnetic phases are calculated.

  16. A Tapered Chalcogenide Microstructured Optical Fiber for Mid-IR Parabolic Pulse Generation: Design and Performance Study

    CERN Document Server

    Barh, Ajanta; Varshney, Ravi K; Pal, Bishnu P

    2013-01-01

    This paper presents a theoretical design of chalcogenide glass based tapered microstructured optical fiber (MOF) to generate high power parabolic pulses (PPs) at the mid-IR wavelength (~ 2 {\\mu}m). We optimize fiber cross-section by the multipole method and studied pulse evolution by well known Symmetrized Split-Step Fourier Method. Our numerical investigation reveals the possibility of highly efficient PP generation within a very short length (~ 18 cm) of this MOF for a Gaussian input pulse of 60 W peak power and FWHM of 3.5 ps. We examined quality of the generated PP by calculating the misfit parameter including the third order dispersion and fiber loss. Further, the effects of variations in input pulse power, pulse width and pulse energy on generated PP were also studied.

  17. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  18. Kinetics of crystallization of Ge30-xSe70Sbx (x = 15, 20, 25 chalcogenide glasses

    Directory of Open Access Journals (Sweden)

    Anusaiya Kaswan

    2014-03-01

    Full Text Available The kinetics of crystallization of Ge30-xSe70Sbx (x = 15, 20, 25 chalcogenide glasses has been investigated using differential scanning calorimetery at different heating rates under non-isothermal conditions. The kinetic analysis of crystallization has been discussed using different theoretical approaches such as Ozawa model, Augis and Bennet model, Matusita model and Gao-Wang model. It is evident from this study that the activation energy of crystallization Ec is composition dependent. The activation energy decreases with increasing Sb content due to the increasing of rate of crystallization. The minimum value of the frequency factor Ko, which is defined as the number of attempts made by the nuclei per second to overcome the energy barrier, confirms the fact that glass is more stable. It has been found that Ge15Se70Sb15 glass is more stable compared to the other compositions.

  19. Synthesis and solid state structures of Chalcogenide compounds of Imidazolin-2-ylidene-1,1-Diphenyl-phosphinamine

    Indian Academy of Sciences (India)

    Naktode Kishor; Suman Das; Abhinanda Kundu; Hari Pada Nayek; Tarun K Panda

    2016-03-01

    We report the synthesis and solid state structures of 1,3-di-aryl-imidazolin-2-ylidine-1,1-diphenylphosphinamine [(aryl=mesityl (1a) and aryl=2,6-diisopripyl (1b)] and their chalcogenide compounds 3-di-aryl-imidazolin-2-ylidine-P, P-diphenylphosphinicamide (2a,b), 1,3-di-aryl-imidazolin-2-ylidine-P,P diphenyl-phosphinothioicamide (3a,b) and 1,3-diaryl-imidazolin-2-ylidine-P,P -diphenyl-phosphinoselenoicamide (4a,b).The compounds 1a,b were prepared in good yield by the reaction of 1,3-di-aryl-imidazolin-2-imine and chlorodiphenylphosphine in the presence of triethylamine in toluene. The reactions of 1a,b with elemental sulphur and selenium afforded the corresponding chalcogenide compounds 3a,b and 4a,b respectively.The corresponding oxo- derivative (2a,b) was obtained by reacting compound 1a,b with 30% aqueous hydrogen peroxide in THF. The molecular structures of 1a, 2a, 3a and 4a,b have been established by single crystal X-ray diffraction analyses. The molecular structures reveal that even C1–N1–P1 angle (124.62o) in compound 1a is less obtuse compared to the corresponding C1–N1–Si1 angles (157.8o) observed in related N-silylated 2-iminoimidazolines and trimethylsilyl iminophosphoranes. C1–N1–P1 angles are further widened in compounds 2a, 3a, and 4a,b due to the attachment of chalcogen atoms onto phosphorus atom.

  20. Numerical demonstration of 3-12μm supercontinuum generation in large-core step-index chalcogenide fibers pumped at 4.5μm

    DEFF Research Database (Denmark)

    Agger, Christian; Kubat, Irnis; Møller, Uffe Visbech;

    2013-01-01

    We numerically demonstrate the generation of a 3-12μm mid-infrared supercontinuum in a large-core (20μm diameter) step-index fiber made from highly nonlinear chalcogenide (As2Se3) pumped at 4.5μm with 40ps, 1kW peak power pulses. © OSA 2013.......We numerically demonstrate the generation of a 3-12μm mid-infrared supercontinuum in a large-core (20μm diameter) step-index fiber made from highly nonlinear chalcogenide (As2Se3) pumped at 4.5μm with 40ps, 1kW peak power pulses. © OSA 2013....

  1. Thermal analysis of chalcogenide glasses of the system (As2Se3)sub(1-x): (Tl2Se)sub(x)

    International Nuclear Information System (INIS)

    In this paper differential thermal analysis (DTA) measurements of chalcogenide glasses of the system (As2Se3)sub(1-x): (Tl2Se)sub(x), with x=0, 0.125, 0.25, and 0.50 are reported. The glass-forming tendencies of these materials have been calculated. The glass-forming tendency of As2Se3 has been found to be the highest among the member glasses of this family of chalcogenides. Also it was found that the glass-forming tendency of As2Se3 decreases gradually as the Tl2Se concentration increases. Tl2Se additions also lower the glass transition temperature Tsub(g) and the area under the endothermic peak for glass transition temperature, suggesting a tendency for relatively weaker bonding and hence less stability of Tl-rich glass compositions. These studies also show that Tl2Se concentrations result in glasses with progressively higher crystallization tendencies. (author)

  2. Universal behavior of chalcogenides of rare-earth metals in the transition to a state with intermediate valence at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Tsiok, O. B.; Khvostantsev, L. G.; Brazhkin, V. V., E-mail: brazhkin@hppi.troitsk.ru [Russian Academy of Sciences, Vereshchagin Institute of High-Pressure Physics (Russian Federation)

    2015-06-15

    Precision measurements of resistivity, thermopower, and volume are performed for TmS, TmSe, and TmTe under a hydrostatic pressure up to 8 GPa. Comparison of the transport properties and volume of TmTe and SmTe in the valence transition region demonstrates a complete analogy up to quantitative coincidence. It is shown that the thermopower of all thulium and samarium chalcogenides in the lattice collapse region and in subsequent rearrangement of the electron spectrum in a wide range of pressures follow a universal dependence corresponding the passage of the Fermi level through the peak of the density of states (DOS). The results are considered in the context of ideas about the exciton nature of the intermediate valence in chalcogenides of rare-earth metals.

  3. Thulium pumped mid-infrared 0.9–9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers

    DEFF Research Database (Denmark)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech;

    2014-01-01

    of ZBLAN spanning the 0.9–4.1μm SC at the −30dB level. The ZBLAN fiber SC is then coupled into 10cm of As2Se3 chalcogenide Microstructured Optical Fiber (MOF) designed to have a zero-dispersion wavelength (λZDW) significantly below the 4.1μm InfraRed (IR) edge of the ZBLAN fiber SC, here 3.55μm...

  4. How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

    Science.gov (United States)

    Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

    2010-05-01

    Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

  5. Raman gain of Ge-Sb-Se chalcogenide glass%Ge-Sb-Se硫系玻璃拉曼增益特性研究∗

    Institute of Scientific and Technical Information of China (English)

    徐航; 彭雪峰; 戴世勋; 徐栋; 张培晴; 许银生; 李杏; 聂秋华

    2016-01-01

    本文制备了As2S3, As2Se3, Ge20Sb15Se65和Ge28Sb12Se60(mol%)四种硫系玻璃,测试了样品的折射率、红外透过及拉曼光谱.利用自发拉曼散射理论,并结合测量的拉曼光谱数据,通过将硫系玻璃与石英玻璃样品的拉曼光谱作对比的方法计算了四种硫系玻璃的拉曼增益系数gR.结果表明: As2S3玻璃在340 cm−1拉曼频移处gR为60×10−13 m/W, As2Se3玻璃在230 cm−1拉曼频移处gR为223×10−13 m/W,与文献报道结果基本相符.与传统光纤拉曼增益系数实验测定法相比,此方法为探索新型高拉曼增益的硫系玻璃组成提供了极大的便捷.应用此方法,计算得出Ge20 Sb15 Se65和Ge28 Sb12 Se60玻璃在200 cm−1拉曼频移处的gR值分别为215×10−13 m/W和111×10−13 m/W.以上结果表明,不含有毒As元素的Ge-Sb-Se硫系玻璃其增益系数可达普通石英玻璃的200倍以上,为环境友好型拉曼光纤激光器基质材料提供了一种全新的可能.%Previously reported chalcogenide glass Raman fiber lasers are made of glass compositions such as As2S3 or As2Se3. However, due to the high toxicity of the element arsenic, there is a potential risk in the glass preparation, fiber drawing, and testing processes. Therefore, we need to explore new environmentally friendly chalcogenide glasses that do not contain As for Raman fiber lasers. Studies have shown that the chalcogenide glasses of Ge-Sb-Se system have excellent infrared transmissions and good environmental friendliness, and thus they are excellent candidates for chalcogenide glass Raman fiber lasers. However, their Raman gains have not been reported. Then Raman gain coefficients can be obtained by experimental measurements and theoretical analyses. The experimental method requires expensive laboratory equipments, a complex optical path, and precision adjustments. Therefore, the design and preparation of new chalcogenide glass fiber with high Raman gain require the theoretical analysis

  6. Fermi resonance in the phonon spectra of quaternary chalcogenides of the type Cu2ZnGeS4.

    Science.gov (United States)

    Valakh, M Ya; Litvinchuk, A P; Dzhagan, V M; Yukhymchuk, V O; Yaremko, A M; Romanyuk, Yu A; Guc, M; Bodnar, I V; Pérez-Rodríguez, A; Zahn, D R T

    2016-02-17

    The experimental resonant and non-resonant Raman scattering spectra of the kesterite structural modification of Cu2ZnGeS4 single crystals are reported. The results are compared with those calculated theoretically within the density functional perturbation theory. For the majority of lines a good agreement (within 2-5 cm(-1)) is established between experimental and calculated mode frequencies. However, several dominant spectral lines, in particular the two intense fully symmetric modes, are found to deviate from the calculated values by as much as 20 cm(-1). A possible reason for this discrepancy is found to be associated with the Fermi resonant interaction between one and two-phonon vibrational excitations. The modelling of spectra, which takes into account the symmetry of interacting states, allows a qualitative description of the observed experimental findings. Due to the similarity of the vibrational spectra of Cu2A (II) B (IV) S4 (A  =  Zn, Mn, Cd; B  =  Sn, Ge, Si) chalcogenides, Fermi resonance is argued to be a general phenomenon for this class of compounds. PMID:26795711

  7. Low-loss, robust fusion splicing of silica to chalcogenide fiber for integrated mid-infrared laser technology development.

    Science.gov (United States)

    Thapa, Rajesh; Gattass, Rafael R; Nguyen, Vinh; Chin, Geoff; Gibson, Dan; Kim, Woohong; Shaw, L Brandon; Sanghera, Jasbinder S

    2015-11-01

    We demonstrate a low-loss, repeatable, and robust splice between single-mode silica fiber and single-mode chalcogenide (CHG) fiber. These splices are particularly difficult to create because of the significant difference in the two fibers' glass transition temperatures (∼1000°C) as well as the large difference in the coefficients of thermal expansion between the fibers (∼20×10(-6)/°C). With 90% light coupled through the silica-CHG fiber splice, predominantly in the fundamental circular-symmetric mode, into the core of the CHG fiber and with 0.5 dB of splice loss measured around the wavelength of 2.5 μm, after correcting only for the Fresnel loss, the silica-CHG splice offers excellent beam quality and coupling efficiency. The tensile strength of the splice is greater than 12 kpsi, and the laser damage threshold is greater than 2 W (CW) and was limited by the available laser pump power. We also utilized this splicing technique to demonstrate 2 to 4.5 μm ultrabroadband supercontinuum generation in a monolithic all-fiber system comprising a CHG fiber and a high peak power 2 μm pulsed Raman-shifted thulium fiber laser. This is a major development toward compact form factor commercial applications of soft-glass mid-IR fibers. PMID:26512522

  8. Fabrication and characterization of Ge20Sb15Se65 chalcogenide glass rib waveguides for telecommunication wavelengths

    International Nuclear Information System (INIS)

    We report on the fabrication and optical properties of Ge20Sb15Se65 chalcogenide glass rib waveguides on a single photonic chip. Radio-frequency magnetron sputtering method is employed to deposit 1.36-μm-thick films and reactive ion etching with CHF3 is used to pattern 0.76-μm-deep rib waveguides of 1–4 μm wide with low surface roughness and vertical sidewalls. Using lensed fibers, the insertion losses for rib waveguides of different widths are measured and propagation losses are estimated to be lower than 1 dB/cm. Finite difference method simulations and refractive index/curve fitting are used to observe a moderate normal dispersion of the waveguides at 1550 nm. - Highlights: • RF magnetron sputtering was used to deposit uniform Ge20Sb15Se65 thin films. • CHF3 reactive ion etching of rib waveguides vertical profile and smooth sidewall. • Insertion losses at 1550 nm measured and low propagation losses estimated. • Dispersion engineered by finite difference methods and refractive curve fitting

  9. Solvothermal and ionothermal syntheses and structures of amine- and/or (poly-)chalcogenide coordinated metal complexes

    Energy Technology Data Exchange (ETDEWEB)

    Thiele, Guenther; Santner, Silke; Donsbach, Carsten; Assmann, Maik; Mueller, Marcus; Dehnen, Stefanie [Marburg Univ. (Germany). Fachbereich Chemie und Wissenschaftliches Zentrum fuer Materialwissenschaften

    2014-10-01

    A series of five compounds, namely [Ba(trien){sub 2}]{sub 3}[SbSe{sub 4}]{sub 2}.trien (1) (trien=diethylenetriamine), [(Se{sub 3})Cr(en){sub 2}(Se{sub 2})Cr(en){sub 2}(Se{sub 3})]{sub 2} (2) (en=ethylenediamine), [(pren){sub 3} Eu(Te{sub 3}){sub 2} Eu(pren){sub 3}] (3) (pren=1,3-diaminopropane), [(en){sub 4} Ba(pren)Ba(en){sub 4}](Te{sub 3}){sub 2} (4) and [enH]{sub 4}[Sn{sub 2} Se{sub 6}] (5), which illustrate the transition of classical polychalcogenides to metalates, are presented, where mixed amine/(poly-)chalcogenide interaction with metal centers are in the focus of interest. A conventional aminothermal synthesis is discussed in comparison with ionothermal approaches. The compounds are considered useful precursors to study in situ interconversion of selenido- and telluridometalates under ionothermal conditions.

  10. Size-Controlled Intercalation-to-Conversion Transition in Lithiation of Transition-Metal Chalcogenides-NbSe3.

    Science.gov (United States)

    Luo, Langli; Zhao, Benliang; Xiang, Bin; Wang, Chong-Min

    2016-01-26

    Transition-metal chalcogenides (TMCs) can be used either as intercalation cathodes or as conversion-type anodes for lithium ion batteries, for which two distinctively different lithiation reaction mechanisms govern the electrochemical performance of TMCs. However, the factors that control the transition of lithiation mechanisms remain elusive. In this work, we investigated the lithiation process of NbSe3 ribbons using in situ transmission electron microscopy and observed a size-dependent transition from intercalation to the conversion reaction. Large NbSe3 ribbons can accommodate high concentrations of Li(+) through intercalation by relaxing their internal spacing, while lithiation of small NbSe3 ribbons proceeds readily to full conversion. We found that the size-dependent variation of the lithiation mechanism is associated with both Li(+) diffusion in NbSe3 and the accommodation of newly formed phases. For large NbSe3 ribbons, the intercalation-to-conversion transition is impeded by both long-range Li(+) diffusion and large-scale accommodation of volume expansion induced by the formation of new phases. These results demonstrate the inherent structural instability of NbSe3 as an intercalation cathode and its high lithiation rate as a promising conversion-type anode.

  11. A Versatile Strategy for Shish-Kebab-like Multi-heterostructured Chalcogenides and Enhanced Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Hu, Jianqiang; Liu, Aili; Jin, Huile; Ma, Dekun; Yin, Dewu; Ling, Pengsheng; Wang, Shun; Lin, Zhiqun; Wang, Jichang

    2015-09-01

    A series of multi-heterostructured metal chalcogenides (CdS-Te, NiS/CdS-Te, and MoS2/CdS-Te) with a surprising shish-kebab-like structure have been synthesized via a one-step microwave-assisted pyrolysis of dithiocarbamate precursors in ethylene glycol. Subsequently, CdS-Te composites were exploited as a self-sacrificial template to craft various CdS-Te@(Pt, Pd) multi-heterostructures. Highly uniform dispersion and intimate interactions between CdS and multicomponent cocatalysts, together with improved separation of photogenerated carriers due to the presence of Te nanotubes (NTs) and trace CdTe, enable CdS-based heterostructured photocatalysts to exhibit greatly enhanced efficiency and stability in the photocatalytic production of H2. Thorough morphological characterizations revealed that the growth of metal sulfide/Te heterostructures originates from the growth of Te tubes, which is likely governed by diffusion-limited depletion of the Te precursor and the dissolution-crystallization process of Te seeds followed by the formation of metal sulfide kebabs.

  12. Systematics in the optical and electronic properties of the binary lanthanide halide, chalcogenide and pnictide compounds: an overview

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, E; Dorenbos, P; Van der Kolk, E, E-mail: e.g.rogers@tudelft.nl [Luminescent Material Research Group, Faculty of Applied Sciences, Delft University of Technology, Faculty of Applied Sciences Mekelweg 15, NL-2629 JB Delft (Netherlands)

    2011-09-15

    The basic optical, electrical and chemical properties of the binary divalent, trivalent and tetravalent lanthanide (Ln = La, ..., Lu) halides (F, Cl, Br and I), chalcogenides (O, S, Se and Te) and pnictides (N, P, As and Sb) were studied using an empirical model that utilizes the systematic behaviour in the energy difference between the localized 4f{sup n}-states, the 5d-derived conduction band and the mp-derived valence band (m = 2,...,5) over the Lanthanide series. As the wide variety in the electrical and optical properties of Ln materials is to a large extent controlled by the energy of these states relative to each other, it is possible to simultaneously predict insulating, semiconducting or metallic behaviour, the nature and magnitude of bandgap energies and the chemical stability of Ln materials as well as valence and valence changes of Ln ions. It can thus be used to predict the basic electronic structure of materials for which no experimental data can be found, and may be a guideline for theoretical modelling.

  13. Structural characterizations and thermal analyses of Se{sub 70}Te{sub 30} chalcogenide glassy alloy

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elrahman, M.I., E-mail: mostafaia11@yahoo.com [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Khafagy, Rasha M. [Materials Science Laboratory, Physics Department, Girls College for Arts, Science, and Education, Ain Shams University, Cairo (Egypt); Zaki, Shiamaa A.; Hafiz, M.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2014-01-10

    Highlights: • Thermal annealing results in amorphous-crystalline change in Se{sub 70}Te{sub 30}. • The average crystallite size increases when the temperature annealing increases. • The kinetics study includes the estimation of the crystallization parameters. - Abstract: The structural characterizations of Se{sub 70}Te{sub 30} chalcogenide glass for the as-prepared and thermal annealed samples are identified using the X-ray diffraction (XRD) and scanning electron microscopy (SEM). The isothermal thermal annealing process results in a transformation from the amorphous to the crystalline state. The average crystallite size increases from 8.67 to 11.24 nm when the temperature annealing increases from 95 to 118 °C. The thermal analyses of Se{sub 70}Te{sub 30} glass are investigated using a differential thermal analyzer (DTA) at five different heating rates under non-isothermal conditions. The activation energy of the glass forming (E{sub g}) as a parameter for the glass transition is estimated by employing different approaches proposed for thermal analyses. The study of crystallization kinetics includes the estimation of the activation energy of crystallization (E{sub c}), frequency factor (K{sub o}) and Avrami exponent (n)

  14. Size-controlled Intercalation to Conversion Transition in Lithiation of Transition-Metal Chalcogenides – NbSe3

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Langli; Zhao, Benliang; Xiang, Bin; Wang, Chong M.

    2016-01-23

    Transition metal chalcogenides (TMCs) can either be used as intercalation cathodes or as conversion type anodes for lithium ion batteries, for which two distinctively different lithiation reaction mechanisms govern the electrochemical performance of TMCs. However, it remains elusive that what controls the transition of lithiation mechanisms. Herein, we investigated the lithiation process of NbSe3 ribbons using in situ transmission electron microscopy (TEM) and observed a size dependent transition from intercalation to conversion reaction. The large NbSe3 ribbons can accommodate high concentration of Li+ through intercalation by relaxing its internal spacing, while lithiation of small NbSe3 ribbons proceeds readily to full conversion reaction. We find that the size dependent variation of lithiation mechanism is attributed to the Li+ diffusion in NbSe3 and the accommodation of newly formed phases, i.e., insufficient Li+ diffusion and limited space for accommodating the volume expansion induced by forming new phases in large size ribbons both impede the intercalation-to-conversion transition. These results demonstrate the inherent structural instability of NbSe3 as an intercalation cathode and fast lithiation rate as a promising conversion type anode.

  15. A Versatile Strategy for Shish-Kebab-like Multi-heterostructured Chalcogenides and Enhanced Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Hu, Jianqiang; Liu, Aili; Jin, Huile; Ma, Dekun; Yin, Dewu; Ling, Pengsheng; Wang, Shun; Lin, Zhiqun; Wang, Jichang

    2015-09-01

    A series of multi-heterostructured metal chalcogenides (CdS-Te, NiS/CdS-Te, and MoS2/CdS-Te) with a surprising shish-kebab-like structure have been synthesized via a one-step microwave-assisted pyrolysis of dithiocarbamate precursors in ethylene glycol. Subsequently, CdS-Te composites were exploited as a self-sacrificial template to craft various CdS-Te@(Pt, Pd) multi-heterostructures. Highly uniform dispersion and intimate interactions between CdS and multicomponent cocatalysts, together with improved separation of photogenerated carriers due to the presence of Te nanotubes (NTs) and trace CdTe, enable CdS-based heterostructured photocatalysts to exhibit greatly enhanced efficiency and stability in the photocatalytic production of H2. Thorough morphological characterizations revealed that the growth of metal sulfide/Te heterostructures originates from the growth of Te tubes, which is likely governed by diffusion-limited depletion of the Te precursor and the dissolution-crystallization process of Te seeds followed by the formation of metal sulfide kebabs. PMID:26270392

  16. Investigation of high tension chalcogenide glass micro-structure optical fibers%高强度硫系玻璃微结构光纤研究

    Institute of Scientific and Technical Information of China (English)

    何钰钜; 王训四; 聂秋华; 张培全; 徐会娟; 徐铁峰; 戴世勋; 张培晴

    2013-01-01

    Chalcogenide glass micro-structure optical fibers (CGMOFs) have wide potential applications in the field of infrared laser energy transmission and infrared optical fiber sensing for their unique optical properties. The problem is that there is no good method to prepare chalcogenide glass micro-structure optical fibers up to now. In this paper,we attempt to fabricate chalcogenide glass micro-structure optical fibers by using the press forming method. A glass extruder is designed to extrude Ge20 Sb15 Se65 chalcogenide glass into a multi-hole fiber preforms. Then,the extruder preform is drawn into fiber using an improved fiber drawing machine. The infrared transmitting property is measured by using infrared thermal imager and infrared spectrometer. The optical loss of extruded glass is calculated based on the infrared transmission spectra of glass disks with different thicknesses. We also measure fiber cross-section and its diameter by scanning electron microscope (SEM). The results show that the infrared transmission spectra of the extruded glass have not decreased obviously. The optical losses of the glasses before and after extruding at 10 μm are 0. 25 dB/cm and 0. 27 dB/cm. respectively. The strength of chalcogenide glass fiber protected by a thin layer of plastic polymer is 1.45 times of that of a standard silica fiber,promoting the development of chalcogenide glass micro-structure optical fibers.%针对硫系玻璃微结构光纤缺少有效制备方法的问题,本文选用可塑性较好的Ge20Sb15Se65硫系玻璃,利用自制的硫系玻璃挤压机制备了多孔硫系玻璃微结构光纤(CGMOF).利用红外热像仪以及傅里叶红外光谱仪测试了挤压前后玻璃的红外透过性能、根据不同厚度玻璃片的透过谱,计算了挤压后玻璃的光学损耗特性.利用扫描电子显微镜观察拉制光纤的横截面,测试了光纤的直径.分析结果表明,挤压后的硫系玻璃的红外透过率和损耗较挤压前没有显著

  17. Memory type switching behavior of ternary Ge20Te80-x Sn x (0  ⩽  x  ⩽  4) chalcogenide compounds

    Science.gov (United States)

    Jeevan Fernandes, Brian; Sridharan, Kishore; Munga, Pumlian; Ramesh, K.; Udayashankar, N. K.

    2016-07-01

    Chalcogenide compounds have gained huge research interest recently owing to their capability to transform from an amorphous to a crystalline phase with varying electrical properties. Such materials can be applied in building a new class of memories, such as phase-change memory and programmable metallization cells. Here we report the memory type electrical switching behavior of a ternary chalcogenide compound synthesized by doping Tin (Sn) in a germanium-telluride (Ge20Te80) host matrix, which yielded a composition of Ge20Te80-x Sn x (0  ⩽  x  ⩽  4). Results indicate a remarkable decrease in the threshold switching voltage (V T) from 140 to 61 V when the Sn concentration was increased stepwise, which is attributed to the domination of the metallicity factor leading to reduced amorphous network connectivity and rigidity. Variation in the threshold switching voltage (V T) was noticed even when the sample thickness and temperature were altered, confirming that the memory switching process is of thermal origin. Investigations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed the formation of a crystalline channel that acts as the conduction path between the two electrodes in the switched region. Structural and morphological studies indicated that Sn metal remained as a micro inclusion in the matrix and hardly contributed to the rigid amorphous network formation in Ge20Te80-x Sn x . Memory type electrical switching observed in these ternary chalcogenide compounds synthesized herein can be explored further for the fabrication of phase-change memory devices.

  18. Mid-infrared supercontinuum generation spanning 2.0 to 15.1  μm in a chalcogenide step-index fiber.

    Science.gov (United States)

    Cheng, Tonglei; Nagasaka, Kenshiro; Tuan, Tong Hoang; Xue, Xiaojie; Matsumoto, Morio; Tezuka, Hiroshige; Suzuki, Takenobu; Ohishi, Yasutake

    2016-05-01

    We experimentally demonstrate mid-infrared (MIR) supercontinuum (SC) generation spanning ∼2.0 to 15.1 μm in a 3 cm-long chalcogenide step-index fiber. The pump source is generated by the difference frequency generation with a pulse width of ∼170  fs, a repetition rate of ∼1000  Hz, and a wavelength range tunable from 2.4 to 11 μm. To the best of our knowledge, this is the broadest MIR SC generation observed so far in optical fibers. It facilitates fiber-based applications in sensing, medical, and biological imaging areas. PMID:27128088

  19. A New Design of As2Se3‎ Chalcogenide Glass Photonic Crystal Fiber with Ultra-Flattened Dispersion in Mid-Infrared Wavelength Range

    OpenAIRE

    Mahmood Seifouri; Saeed Olyaee; Moslem Dekamin

    2014-01-01

    In this paper, we report a new design of As2Se3‎ chalcogenide glass photonic crystal fiber (PCF) with ultra-flattened dispersion at mid-infrared wavelength range. We have used the plane wave expansion method (PWE) for designing the structure of As2Se3‎ glass PCF at different wavelength windows. In the proposed structure with hole to hole spacing and , the negative dispersion is -1025 ps/nm/km at the wavelength of 1.55µm, and also an ultra-flattened dispersion is achieved at the wavelength ra...

  20. Extraction and recovery of mercury and lead from aqueous waste streams using redox-active layered metal chalcogenides. 1998 annual progress report

    International Nuclear Information System (INIS)

    'Mercury and other highly-toxic heavy metals such as cadmium and lead are present in many aquatic environments, and the remediation of such environments or the avoidance of heavy-metal contamination in the first place is an area of active interest. In recent years tougher environmental regulations and the high initial cost of new, more effective, and more selective extractants has made the reuse of extractant materials and the minimization of secondary waste volume a focus of their scientific effort. The authors research has involved the investigation of redox-active layered metal chalcogenides as selective, effective, and redox-recyclable extractants for heavy metals from aqueous solution.'

  1. Glass forming tendencies of chalcogenides of the system (As2Se3)sub(1-x):(T12Se)sub(x)

    International Nuclear Information System (INIS)

    In this paper glass forming capabilities of chalcogenide glasses based on As2Se3 with T12Se concentrations are discussed. The studies were made using the differential thermal analysis (DTA) technique. These studies show that the glass forming tendency of As2Se3 decreases as the concentrations of T12Se molecules are increased. Also these studies show that with addition of T12Se, the glass transition temperature Tsub(g) of As2Se3 decreases, suggesting a tendency for weaker bonding and hence less stability of T1-rich compositions. (author)

  2. Noncentrosymmetric rare-earth copper gallium chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se): An unexpected combination

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, Abishek K.; Rudyk, Brent W.; Lin, Xinsong; Singh, Harpreet [Department of Chemistry, University of Alberta, Edmonton, AB Canada T6G 2G2 (Canada); Sharma, Arzoo Z. [Department of Chemistry, University of Manitoba, Winnipeg, MB Canada R3T 2N2 (Canada); Wiebe, Christopher R. [Department of Chemistry, University of Manitoba, Winnipeg, MB Canada R3T 2N2 (Canada); Department of Chemistry, The University of Winnipeg, Winnipeg, MB Canada R3B 2G3 (Canada); Canadian Institute for Advanced Research, Toronto, ON, Canada M5G 1Z8 (Canada); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, AB Canada T6G 2G2 (Canada)

    2015-09-15

    The quaternary rare-earth chalcogenides RE{sub 3}CuGaS{sub 7} and RE{sub 3}CuGaSe{sub 7} (RE=La–Nd) have been prepared by reactions of the elements at 1050 °C and 900 °C, respectively. They crystallize in the noncentrosymmetric La{sub 3}CuSiS{sub 7}-type structure (hexagonal, space group P6{sub 3}, Z=2) in which the a-parameter is largely controlled by the RE component (a=10.0–10.3 Å for the sulfides and 10.3–10.6 Å for the selenides) whereas the c-parameter is essentially fixed by the choice of Ga and chalcogen atoms within tetrahedral units (c=6.1 Å for the sulfides and 6.4 Å for the selenides). They extend the series RE{sub 3}MGaCh{sub 7}, previously known for divalent metal atoms (M=Mn–Ni), differing in that the Cu atoms in RE{sub 3}CuGaCh{sub 7} occupy trigonal planar sites instead of octahedral sites. Among quaternary chalcogenides RE{sub 3}MM′Ch{sub 7}, the combination of monovalent (M=Cu) and trivalent (M′=Ga) metals is unusual because it appears to violate the condition of charge balance satisfied by most La{sub 3}CuSiS{sub 7}-type compounds. The possibility of divalent Cu atoms was ruled out by bond valence sum analysis, magnetic measurements, and X-ray photoelectron spectroscopy. The electron deficiency in RE{sub 3}CuGaCh{sub 7} is accommodated through S-based holes at the top of the valence band, as shown by band structure calculations on La{sub 3}CuGaS{sub 7}. An optical band gap of about 2.0 eV was found for La{sub 3}CuGaSe{sub 7}. - Graphical abstract: The chalcogenides RE{sub 3}CuGaCh{sub 7} contain monovalent Cu in trigonal planes and trivalent Ga in tetrahedra; they are electron-deficient representatives of La{sub 3}CuSiS{sub 7}-type compounds, which normally satisfy charge balance. - Highlights: • Quaternary chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se) were prepared. • Bond valence sums, magnetism, and XPS data give evidence for monovalent Cu. • Crystal structures reveal high anisotropy of Cu displacement.

  3. Mercury's Crater-Hosted Hollows: Chalcogenide Pryo-Thermokarst, and Permafrost Analogs on Earth, Mars, and Titan

    Science.gov (United States)

    Kargel, Jeffrey

    2013-04-01

    MESSENGER has acquired stunning images of pitted, light-toned and variegated light/dark terrains located primarily on the floors—probably impact-melt sheets—of many of Mercury's large craters. Termed "hollows", the pitted terrains are geomorphologically similar to some on Mars formed by sublimation of ice-rich permafrost and to lowland thermokarst on Earth formed by permafrost thaw; to "swiss cheese" terrain forming by sublimation of frozen CO2 at the Martian South Pole; and to suspected hydrocarbon thermokarst at Titan's poles. I shall briefly review some analogs on these other worlds. The most plausible explanation for Mercury's hollows is terrain degradation involving melting or sublimation of heterogeneous chalcogenide and sulfosalt mineral assemblages. I refer to these Mercurian features as pyrothermokarst; the etymological redundancy distinguishes the conditions and mineral agents from the ice-related features on Earth and Mars, though some of the physical processes may be similar. Whereas ice and sulfur have long been suspected and ice recently was discovered in permanently shadowed craters of Mercury's polar regions, the hollows occur down to the equator, where neither ice nor sulfur is plausible. The responsible volatiles must be only slightly volatile on the surface and/or in the upper crust of Mercury's low to middle latitudes at 400-800 K, but they must be capable of either melting or sublimating on geologically long time scales. Under prevailing upper crustal and surface temperatures, chalcophile-rich "permafrost" can undergo either desulfidation or melting reactions that could cause migration or volume changes of the permafrost, and hence lead to collapse and pitting. I propose the initial emplacement of crater-hosted chalcogenides, sulfosalts and related chalcophile materials such as pnictides, in impact-melt pools (involving solid-liquid and silicate-sulfide fractionation) and further differentiation by associated dry or humid fumaroles (solid

  4. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    Energy Technology Data Exchange (ETDEWEB)

    Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  5. Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

    Science.gov (United States)

    Mao, Alvin W.

    Chalcogenide glasses exhibit unique optical properties such as infrared transparency owing to the low-phonon energies, optical non-linearity, and photo-induced effects that have important consequences for a wide range of technological applications. However, to fully utilize these properties, it is necessary to better understand the atomic-scale structure and structure-property relationships in this important class of materials. Of particular interest in this regard are glasses in the stoichiometric system Na2Se/BaSe--Ga 2Se3--GeSe2 as they are isoelectronic with the well-studied, oxide glasses of the type M2O(M'O)--Al 2O3--SiO2 (M = alkali, M' = alkaline earth). This dissertation investigates the structure of stoichiometric Na 2Se/BaSe--Ga2Se3--GeSe2 and off-stoichiometric BaSe--Ga2Se3--GeSe 2+/-Se glasses using a combination of Fourier-transform Raman and solid state nuclear magnetic resonance (NMR) spectroscopies. The spectroscopic data is then compared to composition-dependent trends in physical properties such as density, optical band gap, glass transition temperature, and melt fragility to develop predictive structural models of the short- and intermediate-range order in the glass network. These models significantly improve our current understanding of the effects of modifier addition on the structure and properties of chalcogenide glasses, and thus enable a more efficient engineering of these highly functional materials for applications as solid electrolytes in batteries or as optical components in infrared photonics. In general, the underlying stoichiometric Ga2Se3--GeSe 2 network consists primarily of corner-sharing (Ga/Ge)Se4 tetrahedra, where the coordination numbers of Ga, Ge, and Se are 4, 4, and 2, respectively. Some edge-sharing exists, but this configuration is relatively unstable and its concentration tends to decrease with any deviation from the GeSe2 composition. Due to the tetrahedral coordination of Ga, the initial addition of Se-deficient Ga2Se

  6. Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

    Science.gov (United States)

    Mao, Alvin W.

    Chalcogenide glasses exhibit unique optical properties such as infrared transparency owing to the low-phonon energies, optical non-linearity, and photo-induced effects that have important consequences for a wide range of technological applications. However, to fully utilize these properties, it is necessary to better understand the atomic-scale structure and structure-property relationships in this important class of materials. Of particular interest in this regard are glasses in the stoichiometric system Na2Se/BaSe--Ga 2Se3--GeSe2 as they are isoelectronic with the well-studied, oxide glasses of the type M2O(M'O)--Al 2O3--SiO2 (M = alkali, M' = alkaline earth). This dissertation investigates the structure of stoichiometric Na 2Se/BaSe--Ga2Se3--GeSe2 and off-stoichiometric BaSe--Ga2Se3--GeSe 2+/-Se glasses using a combination of Fourier-transform Raman and solid state nuclear magnetic resonance (NMR) spectroscopies. The spectroscopic data is then compared to composition-dependent trends in physical properties such as density, optical band gap, glass transition temperature, and melt fragility to develop predictive structural models of the short- and intermediate-range order in the glass network. These models significantly improve our current understanding of the effects of modifier addition on the structure and properties of chalcogenide glasses, and thus enable a more efficient engineering of these highly functional materials for applications as solid electrolytes in batteries or as optical components in infrared photonics. In general, the underlying stoichiometric Ga2Se3--GeSe 2 network consists primarily of corner-sharing (Ga/Ge)Se4 tetrahedra, where the coordination numbers of Ga, Ge, and Se are 4, 4, and 2, respectively. Some edge-sharing exists, but this configuration is relatively unstable and its concentration tends to decrease with any deviation from the GeSe2 composition. Due to the tetrahedral coordination of Ga, the initial addition of Se-deficient Ga2Se

  7. A New Design of As2Se3‎ Chalcogenide Glass Photonic Crystal Fiber with Ultra-Flattened Dispersion in Mid-Infrared Wavelength Range

    Directory of Open Access Journals (Sweden)

    Mahmood Seifouri

    2014-12-01

    Full Text Available In this paper, we report a new design of As2Se3‎ chalcogenide glass photonic crystal fiber (PCF with ultra-flattened dispersion at mid-infrared wavelength range. We have used the plane wave expansion method (PWE for designing the structure of As2Se3‎ glass PCF at different wavelength windows. In the proposed structure with hole to hole spacing and , the negative dispersion is -1025 ps/nm/km at the wavelength of 1.55µm, and also an ultra-flattened dispersion is achieved at the wavelength range of 3.5-18μm. Hence such PCFs have a high potential to be used as dispersion compensating fibers at 1.55µm wavelength in optical communication systems. The ultra-flattened dispersion at the wavelength range of 3.5-18μm can be employed to achieve high power super-continuum generation. The nonlinear coefficient of the proposed PCF is 1.5 W-1m-1 at the wavelength of 1.55µm. Chalcogenide glasses are known to have both high transparency and nonlinearity in a wide range of infrared wavelengths compared to silica glasses.

  8. Mid-infrared supercontinuum generation to 12.5μm in large NA chalcogenide step-index fibres pumped at 4.5μm

    DEFF Research Database (Denmark)

    Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech;

    2014-01-01

    We present numerical modeling of mid-infrared (MIR) supercontinuum generation (SCG) in dispersion-optimized chalcogenide (CHALC) step-index fibres (SIFs) with exceptionally high numerical aperture (NA) around one, pumped with mode-locked praseodymium-doped (Pr3+) chalcogenide fibre lasers. The 4.......5um laser is assumed to have a repetition rate of 4MHz with 50ps long pulses having a peak power of 4.7kW. A thorough fibre design optimisation was conducted using measured material dispersion (As-Se/Ge-As-Se) and measured fibre loss obtained in fabricated fibre of the same materials. The loss...... was below 2.5dB/m in the 3.3-9.4μ m region. Fibres with 8 and 10μm core diameters generated an SC out to 12.5 and 10.7μm in less than 2m of fibre when pumped with 0.75 and 1kW, respectively. Larger core fibres with 20μm core diameters for potential higher power handling generated an SC out to 10.6μm...

  9. Engel-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4

    Science.gov (United States)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2016-01-01

    Metal chalcogenide semiconductors have a significant role in the development of materials for energy and nanotechnology applications. First principle calculations were applied on CsAgGa2Se4 to investigate its optoelectronic structure and bonding characteristics, using the full-potential linear augmented plane wave method within the framework of generalized gradient approximations (GGA) and Engel-Vosko GGA functionals (EV-GGA). The band structure from EV-GGA shows that the valence band maximum and conduction band minimum are situated at Γ with a band gap value of 2.15 eV. A mixture of orbitals from Ag 4 p 6/4 d 10, Se 3 d 10, Ga 4 p 1, Se 4 p 4 , and Ga 4 s 2 states have a primary role to lead to a semiconducting character of the present chalcogenide. The charge density iso-surface shows a strong covalent bonding between Ag-Se and Ga-Se atoms. The imaginary part of dielectric constant reveals that the threshold (first optical critical point) energy of dielectric function occurs 2.15 eV. It is obvious that with a direct large band gap and large absorption coefficient, CsAgGa2Se4 might be considered a potential material for photovoltaic applications.

  10. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50) for Phase Change Memory

    Institute of Scientific and Technical Information of China (English)

    LAI Yun-Feng; FENG Jie; QIAO Bao-Wei; HUANG Xiao-Gang; CAI Yan-Fei; LIN Yin-Yin; TANG Ting-Ao; CAI Bing-Chu; CHEN Bomy

    2006-01-01

    @@ The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure.

  11. Methods of thermoelectric enhancement in silicon-germanium alloy type I clathrates and in nanostructured lead chalcogenides

    Science.gov (United States)

    Martin, Joshua

    The rapid increase in thermoelectric (TE) materials R&D is a consequence of the growing need to increase energy efficiency and independence through waste heat recovery. TE materials enable the direct solid-state conversion of heat into electricity, with little maintenance, noise, or cost. In addition, these compact devices can be incorporated into existing technologies to increase the overall operating efficiency. High efficiency TE materials would enable the practical solid-state conversion of thermal to electrical energy. Optimizing the interdependent physical parameters to achieve acceptable efficiencies requires materials exhibiting a unique combination of properties. This research reports two methods of thermoelectric enhancement: lattice strain effects in silicon-germanium alloy type I clathrates and the nanostructured enhancement of lead chalcogenides. The synthesis and chemical, structural, and transport properties characterization of Ba8Ga16SixGe30-x type I clathrates with similar Ga-to-group IV element ratios but with increasing Si substitution (4 < x < 14) is reported. Substitution of Si within the Ga-Ge lattice framework of the type I clathrate Ba8Ga16Ge30 results in thermoelectric performance enhancement. The unique dependences of carrier concentration, electrical resistivity, Seebeck coefficient, and carrier effective mass on Si substitution level, may imply a modified band structure with Si substitution. These materials were then further optimized by adjusting the Ga-to-group IV element ratios. Recent progress in a number of higher efficiency TE materials can be attributed to nanoscale enhancement. Many of these materials demonstrate increased Seebeck coefficient and decreased thermal conductivity due to the phenomenological properties of nanometer length scales. To satisfy the demands of bulk industrial applications requires additional synthesis techniques to incorporate nanostructure directly within a bulk matrix. This research investigates, for

  12. Characterization of phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films by laser-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Alvi, M.A., E-mail: alveema@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India); Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-02-15

    Highlights: Black-Right-Pointing-Pointer Effect of laser-irradiation on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by X-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Laser-irradiation causes a decrease in optical band gap in Ga{sub 15}Se{sub 77}Ag{sub 8} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non-direct transitions predominate. - Abstract: Phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films were prepared by thermal evaporation technique. Thin films were then irradiated by Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser for different time intervals. The X-ray structural characterization revealed the amorphous nature of as-prepared films while the laser irradiated films show the polycrystalline nature. Field Emission Scanning Electron Microscope (FESEM) has been used to study the structural changes. The results are discussed in terms of the structural aspects and amorphous to crystalline phase change in Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap of the Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The optical constants of these thin films are measured by using the absorption spectra measurements as a function of photon energy in the wavelength region 400-1100 nm. It is found that the optical band gap decreases while the absorption coefficient and extinction coefficient increases with increasing the laser-irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state. The dc

  13. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Science.gov (United States)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  14. Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ting; SONG Zhi-Tang; FENG Gao-Ming; LIU Bo; WU Liang-Cai; FENG Song-Lin; CHEN Bomy

    2007-01-01

    Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100ns. Both the values are larger than those of the Ge2Sb2 Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.

  15. Dispersion of the refractive index of a samarium-doped Se{sup 95}Te{sup 5} chalcogenide glassy semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Atayeva, S. U., E-mail: seva-atayeva@mail.ru; Mekhtiyeva, S. I.; Isayev, A. I. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

    2015-07-15

    The transmission spectrum of a Se{sup 95}Te{sup 5} chalcogenide glassy semiconductor doped with samarium (0.05, 0.1, 0.25, 0.5, and 1 at %) is studied; the Swanepoel method and the single-oscillator model are used to determine the oscillator energy E{sup 0}, dispersion energy E{sup d}, optical width of the band gap E{sup g}, and linear (n) and nonlinear (n{sup 2}) refractive indices. The changes in the values of these parameters as a result of doping are attributed to modification of the local structure and to a change in the concentration of defect states.

  16. First principles calculations of structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and PbTe compounds

    Indian Academy of Sciences (India)

    N Boukhris; H Meradji; S Amara Korba; S Drablia; S Ghemid; F El Haj Hassan

    2014-08-01

    The structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and BeTe using full-potential linear augmented plane wave (FP-LAPW) method are investigated. The exchange–correlation energy within the local density approximation (LDA) and the generalized gradient approximation (GGA) are described. The calculated structural parameters are in reasonable agreement with the available experimental and theoretical data. The electronic band structure shows that the fundamental energy gap is direct (L–L) for all the compounds. Thermal effects on some macroscopic properties of these compounds are predicted using the quasi-harmonic Debye model, in which the lattice vibrations are taken into account. The variations of the lattice constant, bulk modulus, heat capacity, volume expansion coefficient and Debye temperature with temperature and pressure are obtained successfully. The effect of spin–orbit interaction is found to be negligible in determining the thermal properties and leads to a richer electronic structure.

  17. Metal Ions Mediated Morphology and Phase Transformation of Chalcogenide Semiconductor: From CuClSe2 Microribbon to CuSe Nanosheet.

    Science.gov (United States)

    Liu, Yong-Qiang; Wu, Hao-Di; Zhao, Yu; Pan, Ge-Bo

    2015-05-01

    Foreign ions are of significant importance in controlling and modulating the morphology of semiconductor nanocrystals during the colloidal synthesis process. Herein, we demonstrate the potential of foreign metal ions to simultaneously control the morphology and crystal phase of chalcogenide semiconductors. The results indicate that the introduction of Al(3+) ions can induce the structural transformation from monoclinic CuClSe2 microribbons (MRs) to klockmannite CuSe nanosheets (NSs) and the growth of large-sized CuSe NSs. The as-prepared micrometer-sized CuSe NSs exhibit a high-conducting behavior, long-term durability, and environment stability. The novel properties enable CuSe NSs to open up a bright prospect for printable electrical interconnects and flexible electronic devices.

  18. Study of Third-Order Optical Nonlinearities of Se-Sn (Bi,Te) Quaternary Chalcogenide Thin Films Using Ti: Sapphire Laser in Femtosecond Regime

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2016-09-01

    The objective of the present research work is to study the nonlinear optical properties of quaternary Se-Sn (Bi,Te) chalcogenide thin films. A Z-scan technique utilizing 800 nm femtosecond laser source has been used for the determination of the nonlinear refractive index (n 2), two-photon absorption coefficient (β 2) and third-order susceptibility (χ (3)). In the measurement of n 2, an aperture is placed in the far field before the detector (closed aperture), while for the measurement of β 2, entire transmitted light is collected by the detector without an aperture (open aperture). Self-focusing has been observed in closed aperture transmission spectra. The appearance of the peak after the valley in this spectrum reflects the positive nonlinear refractive index. The calculated value of n 2 of the studied thin films varies from 1.06 × 10-12 cm2/W to 0.88 × 10-12 cm2/W. The compound-dependent behavior of n 2 is explained in this paper. We have also compared the experimental values of n 2 with the theoretically determined values, other compounds of chalcogenide glass and pure silica. The n 2 of the investigated thin films is found to be 3200 times higher than pure silica. The results of the open aperture Z-scan revealed that the value of β 2 of the studied compound is in the order of 10-8 cm/W. The behavior of two-photon absorption is described by means of the optical band gap (E g) of the studied compound. The variation in the figure-of-merit from 0.32 to 1.4 with varying Sn content is also reported in this paper. The higher value of nonlinearity makes this material advantageous for optical fibers, waveguides and optical limiting devices.

  19. Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25 Chalcogenide Alloys

    Directory of Open Access Journals (Sweden)

    Shaveta Sharma

    2016-06-01

    Full Text Available The spectroscopic studies of various physical properties of glassy and polycrystalline chalcogenide alloys are important due to their importance as active materials in various solid state devices. The composition dependence of these properties are explained on the basis of coordination number, but the splitting of this effect from the nature of additive is imperative for furthering the understanding of these systems. In the present work, the structural and spectroscopic investigations of melt quenched bulk In-Sb-Se chalcogenide alloys have been studied by XRD, RAMAN and optical spectroscopic techniques. The XRD study reveals the polycrystalline nature of the samples. The composition was analysed using the energy dispersive X-ray spectroscopy technique. The XRD study reveals the crystallization of Sb2Se3 and β-In2Se3 phases while the increase in the intensity for β-In2Se3 phase has been observed with the increase in indium content. The RAMAN spectra also reveal the formation of chalcogenide based Sb and In structural units. The diffused reflectance spectrum was used to calculate the optical absorption in 800-1500 nm spectral region and used to study the composition dependence of the optical gap in these samples. The results have been discussed in conjunction with the heterogeneous phases; density of defect states; electronegativity and average mean bond energy for these polycrystalline alloys.

  20. Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example of Cs2MIIM3IVQ8

    Science.gov (United States)

    Besse, Rafael; Sabino, Fernando P.; Da Silva, Juarez L. F.

    2016-04-01

    Quaternary chalcogenide materials offer a wide variety of chemical and physical properties, and hence, those compounds have been widely studied for several technological applications. Recently, experimental studies have found that the chalcogenide Cs2MIIM3IVQ8 family (MII = Mg , Zn , Cd , Hg , MIV = Ge , Sn and Q = S , Se , Te ), which includes 24 compounds, yields a wide range of band gaps, namely, from 1.07 to 3.4 eV, and hence, they have attracted great interest. To obtain an improved atomistic understanding of the role of the cations and anions on the physical properties, we performed a first-principles investigation of the 24 Cs2MIIM3IVQ8 compounds employing density functional theory within semilocal and hybrid exchange-correlation energy functionals and the addition of van der Waals corrections to improve the description of the weakly interacting layers. Our lattice parameters are in good agreement with the available experimental data (i.e., 11 compounds), and the equilibrium volume increases linearly by increasing the atomic number of the chalcogen, which can be explained by the increased atomic radius of the chalcogen atoms from S to Te . We found that van der Waals corrections play a crucial role in the lattice parameter in the stacking direction of the Cs2MIIM3IVQ8 layers, while the binding energy per unit area has similar magnitude as obtained for different layered materials. We obtained that the band gaps follow a linear relation as a function of the unit cell volume, which can be explained by the atomic size of the chalcogen atom and the relative position of the Q p states within the band structure. The fundamental and optical band gaps differ by less than 0.1 eV. The band gaps obtained with the hybrid functional are in good agreement with the available experimental data. Furthermore, we found from the Bader analysis, that the Coulomb interations among the cations and anions play a crucial role on the energetic properties.

  1. ac conductivity and dielectric properties of amorphous Se{sub 80}Te{sub 20-x}Ge{sub x} chalcogenide glass film compositions

    Energy Technology Data Exchange (ETDEWEB)

    Hegab, N.A. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)], E-mail: abir_net_2005@hotmail.com; Afifi, M.A.; Atyia, H.E.; Farid, A.S. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2009-05-27

    Thin films of the prepared Se{sub 80}Te{sub 20-x}Ge{sub x} (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the {omega}{sup s} law, in accordance with the hopping model, s is found to be temperature dependent (s < 1) and its value goes down as the temperature is increased. The temperature dependence of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping (CBH) model. Values of dielectric constant {epsilon}{sub 1} and dielectric loss {epsilon}{sub 2} were found to decrease with frequency and increase with temperature. The maximum barrier height W{sub m}, calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

  2. Fabrication of a thermoelectric generator on a polymer-coated substrate via laser-induced forward transfer of chalcogenide thin films

    International Nuclear Information System (INIS)

    We have demonstrated the fabrication of a thermoelectric energy harvesting device via laser-induced forward transfer of intact solid thin films. Thermoelectric chalcogenide materials, namely bismuth telluride (Bi2Te3), bismuth selenide (Bi2Se3) and bismuth antimony telluride (Bi0.5Sb1.5Te3), were sequentially printed using a nanosecond excimer laser onto an elastomeric polydimethylsiloxane-coated glass substrate to form thermocouples connected in series creating a thermoelectric generator. The resulting generator Seebeck coefficient and series resistance per leg pair were measured to be 0.17 mV K−1 and 10 kΩ respectively. It was shown that laser-induced forward transfer allows device fabrication from inorganic semiconductor compounds on inexpensive elastic polymer substrates and demonstrates the ability to print materials with pre-defined thermoelectric properties. This allows the rapid manufacturing of a complete thermoelectric device on mm2-areas with μm-scale precision, without the need of further lithographic steps. (paper)

  3. External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX (X=S, Se and Te)

    Energy Technology Data Exchange (ETDEWEB)

    Seddik, T. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Bouhemadou, A.; Guechi, N. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif (Algeria); Sayede, A. [Université Lille Nord de France, F-59000 Lille (France); Université-Artois, UCCS, F-62300 Lens (France); CNRS, UMR 8181, F-59650 Villeneuve d’Ascq (France); Varshney, D. [Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, Madhya Pradesh (India); Al-Douri, Y. [Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia)

    2013-11-01

    The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: X=S, Se, and Te) in their low-pressure phase (Fm3{sup ¯}m) and high-pressure phase (Pm3{sup ¯}m). The exchange-correlation potential is treated with the generalized gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE). Temperature dependence of the volume and both adiabatic and isothermal bulk moduli is predicted for a temperature range from 0to1200K for the both phases of the herein considered materials. Furthermore, we have analyzed the thermodynamic properties such as the heat capacities, C{sub V} and C{sub P}, thermal expansion, α, and Debye temperature, Θ{sub D,} under variable pressure and temperature. We have calculated the isothermal elastic constants C{sub ij}{sup T} of the YX monochalcogenides in both NaCl-B1 and CsCl-B2 phases at zero pressure and a temperature range 0−1200K. The results show that rare earth yttrium monochalcogenides are mechanically stable at high temperature. The elastic anisotropy of all studied materials in the two phases has been studied using three different methods.

  4. Characterization of the optical constants and dispersion parameters of chalcogenide Te{sub 40}Se{sub 30}S{sub 30} thin film: thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elrahman, M.I.; Hafiz, M.M.; Qasem, Ammar; Abdel-Rahim, M.A. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt)

    2016-02-15

    Chalcogenide Te{sub 40}Se{sub 30}S{sub 30} thin films of different thickness (100-450 nm) are prepared by thermal evaporation of the Te{sub 40}Se{sub 30}S{sub 30} bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases. (orig.)

  5. Phase transformation and kinetic study of a Ga5Ge15Te80 chalcogenide glass using the non-isothermal method

    Science.gov (United States)

    Fadel, M.; Shakra, A. M.; Sakr, G. B.

    2016-07-01

    The crystallization kinetics for a Ga5Ge15Te80 chalcogenide glass, prepared by melt quenching technique, have been studied by differential thermal analysis (DTA) under non-isothermal condition, with five different heating rates α = 10, 15, 20, 25 and 30 ° C/ min . The DTA trace indicates the presence of two crystallization peaks. The glass transition temperature Tg , the crystallization temperature Tc and the melting point temperature Tm were determined. The dependence of Tg , T_{c1} and T_{c2} on the heating rate α , were used for the determination of the activation energy of glass transition Eg and crystallization Ec . The DTA data have been analyzed in terms of activation energy, stability and dimensionality of growth ( m by different models viz. Kissinger's, Mahadeavan, Augis and Bennet's and Matusita's equations. The Avrami exponents ( n and ( m have also been determined; the obtained values of ( n and ( m are 2.959 and 1.959, respectively, indicating bulk nucleation with two-dimensional growth.

  6. External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX (X=S, Se and Te)

    International Nuclear Information System (INIS)

    The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: X=S, Se, and Te) in their low-pressure phase (Fm3¯m) and high-pressure phase (Pm3¯m). The exchange-correlation potential is treated with the generalized gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE). Temperature dependence of the volume and both adiabatic and isothermal bulk moduli is predicted for a temperature range from 0to1200K for the both phases of the herein considered materials. Furthermore, we have analyzed the thermodynamic properties such as the heat capacities, CV and CP, thermal expansion, α, and Debye temperature, ΘD, under variable pressure and temperature. We have calculated the isothermal elastic constants CijT of the YX monochalcogenides in both NaCl-B1 and CsCl-B2 phases at zero pressure and a temperature range 0−1200K. The results show that rare earth yttrium monochalcogenides are mechanically stable at high temperature. The elastic anisotropy of all studied materials in the two phases has been studied using three different methods

  7. New Intermetallic Ternary Phosphide Chalcogenide AP2-xXx (A = Zr, Hf; X = S, Se) Superconductors with PbFCl-Type Crystal Structure

    Science.gov (United States)

    Kitô, Hijiri; Yanagi, Yousuke; Ishida, Shigeyuki; Oka, Kunihiko; Gotoh, Yoshito; Fujihisa, Hiroshi; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi

    2014-07-01

    We have synthesized a series of intermetallic ternary phosphide chalcogenide superconductors, AP2-xXx (A = Zr, Hf; X = S, Se), using the high-pressure synthesis technique. These materials have a PbFCl-type crystal structure (space group P4/nmm) when x is greater than 0.3. The superconducting transition temperature Tc changes systematically with x, yielding dome-like phase diagrams. The maximum Tc is achieved at approximately x = 0.7, at which point the Tc is 6.3 K for ZrP2-xSex (x = 0.75), 5.5 K for HfP2-xSex (x = 0.7), 5.0 K for ZrP2-xSx (x = 0.675), and 4.6 K for Hfp2-xSx (x = 0.5). They are typical type-II superconductors and the upper and lower critical fields are estimated to be 2.92 T at 0 K and 0.021 T at 2 K for ZrP2-xSex (x = 0.75), respectively.

  8. Enhancement in CO2 Adsorption Capacity and Selectivity in the Chalcogenide Aerogel CuSb2S4 by Post-synthetic Modification with LiCl

    KAUST Repository

    Ahmed, Ejaz

    2015-09-11

    The new chalcogel CuSb2S4 was obtained by reacting Cu(OAc)2·H2O with KSbS2 in a water/formamide mixture at room temperature. In order to modify the gas adsorption capacity the synthesized CuSb2S4 aerogel was loaded with different amounts of LiCl. CO2 adsorption measurements on the CuSb2S4 aerogel before and after treatment with LiCl showed more than three times increased uptake of the LiCl-modified chalcogel. The selectivities of the gas pairs CO2/H2 and CO2/CH4 in the LiCl-treated chalcogel are 235 and 105 respectively and amongst the highest reported for chalcogenide-based aerogels. In comparison with other porous materials like zeolites, activated carbon and most of the Metal Organic Frameworks (MOFs) or Porous Organic Frameworks (POFs), our synthesized aerogels show good air and moisture stability. Although, the CO2 storage capacity of our aerogels is relatively low, however the selectivity of CO2 over H2 or CH4 in LiCl-loaded aerogels are higher than in zeolites, activated carbon as well as some MOFs like Cu-BTC and MOF-5 etc.

  9. Mid-infrared supercontinuum covering the 1.4–13.3 μm molecular fingerprint region using ultra-high NA chalcogenide step-index fibre

    DEFF Research Database (Denmark)

    Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis;

    2014-01-01

    with a central wavelength of either 4.5 μm or 6.3 μm into short pieces of ultra-high numerical-aperture step-index chalcogenide glass optical fibre generates a mid-infrared supercontinuum spanning 1.5 μm to 11.7 μm and 1.4 μm to 13.3 μm, respectively. This is the first experimental demonstration to truly reveal...

  10. Effect of chemical ordering on the crystallization behavior of Se90Te10-xSnx (x=2, 4, 6, and 8) chalcogenide glasses

    Science.gov (United States)

    Lafi, Omar A.; Imran, Mousa M. A.; Abu-Shaweesh, Nazem I.; Al-Kurdi, Fares M.; Khatatbeh, Ibtehaj K.

    2014-06-01

    Ternary Se90Te10-xSnx (x=2, 4, 6, and 8) chalcogenide glassy alloys have been prepared by melt quenching technique. Various crystallization parameters, such as onset (Tc) and peak (Tp) crystallization temperatures, activation energy of crystallization (Ec) and Avrami exponent (n) have been determined for these alloys. Tc and Tp have been determined directly from the non-isothermal differential scanning calorimeter (DSC) thermograms. The value of Ec has been calculated from the variation of both Tc and Tp with the heating rate (β) according to Kissinger, Takhor, Augis-Bennett and Ozawa models while Augis-Bennett method has been used to deduce the value of n for the studied samples. The obtained values of the crystallization parameters have been correlated with the character and the energy of the chemical bonds through the calculation of the heteronuclear bond energies of the constituent atoms using Pauling principle. In addition to that, Tichy-Ticha model was used to estimate the mean bond energy of the average cross-linking per atom , the average bond energy per atom of the remaining matrix Erm>, and the overall mean bond energy of the studied glasses. Results reveal that both of Tc and Tp decreases with increases Sn content. This is may be attributed to the decreasing in the overall mean bond energy . Besides, the plot of Ec (and also Tg) against was found to be non linear, which contradicts the well known linear correlation between Ec and Tg with as suggested by Tichy-Ticha model. This discrepancy may be due to the fact that the Tichy-Ticha linear correlation model was based on the assumption of covalent glassy network, while in the present glassy alloys, Se-Te binary doped with heavy elements such as Sn exhibit iono-covalent bonding. The calculated values of the ionicity are in support of this argument.

  11. Optoelectronic behavior of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se): A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Din, Haleem Ud [Department of Physics, Hazara University, Mansehra (Pakistan); Azam, Sikander; Khan, Saleem Ayaz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria)

    2014-12-05

    Highlights: • The Fermi surface and optoelectronic properties for Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) compounds are investigated for the first time. • The electronic band structure calculations reveal a metallic nature for the herein studied compounds. • The bonding nature between different atoms is discussed. • Considerable anisotropy was found between the principal complex tensor components for the two compounds. - Abstract: First principle calculations of electronic, Fermi surface, electronic charge density and optical properties of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) are performed using full potential linear augmented plane wave (FP-LAPW) method within the frame work of density functional theory. Using mBJ method, the electronic band curves overlap at Fermi level and show metallic band structure for both compounds. The calculated densities of states (DOS) spectra show that the valence band is mainly attributed to Rb-p, Pd-d and S-s/p or Se-s/p states; conduction band is mainly attributed to Pd-d, U-f and S-p or Se-p/d states. From the electronic charge density spectrum, it is revealed that a strong covalent bond exists between Pd and S, and Pd or Se while charge transfer between U and S, U and Se, Rb and S, and Rb and Se atoms results in ionic bond nature. It is noted from Fermi surface calculations that both compounds comprise same number of fast velocity electrons but differs in slow or intermediate velocity of electrons. The calculated frequency dependent dielectric function, energy loss function and reflectivity show a considerable anisotropy for both compounds.

  12. Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States); Wiley, John B., E-mail: jwiley@uno.edu [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States)

    2012-06-15

    Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb{sub 2}O{sub 7}, is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb{sub 2}LaNb{sub 2}O{sub 7}. This compound is then reacted at room-temperature with in situ generated H{sub 2}S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb{sub 2}Cl)LaNb{sub 2}O{sub 7} where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S{sup 2−} alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H{sub 2}Se{sub (g)} were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

  13. PROPERTIES OF Dy3+ -DOPED Ge - Ga - Se CHALCOGENIDE GLASSES%Dy3+掺杂Ge-Ga-Se硫系玻璃的性质

    Institute of Scientific and Technical Information of China (English)

    赵东辉; 夏方; 王华; 陈国荣; NEMEC Petr; FRUMAR Miloslav; 李顺光; 胡丽丽

    2005-01-01

    Dy3+-doped chalcogenide glasses in Ge - Ga - Se system were prepared and the properties of glasses samples including density, microhardness, visilble- infrared transmission spectra, emission spectra and fluorescence life were measured. The molar volume and compactness of glasses were calculated from the density data obtained. The properties of glasses as a function of the average coordination number <r> were discussed. Results show that good fluorescent properties are obtained at 1.3μm when <r> is greater than 2.67 and the measured emission lifetime is from 440 μs to 530 μs. The strongest emission is found in the glass at the chemical threshold of <r> = 2.73.%实验制备了Dy3+掺杂Ge-Ga-Se系统硫系玻璃样品,测试了玻璃的密度、显微硬度、可见-红外透射光谱、荧光光谱以及荧光寿命.根据玻璃的密度计算了玻璃的摩尔体积以及致密度.讨论了玻璃的这些性能随系统平均配位数<r>的变化关系.实验结果表明:该系统中配位数大于2.67的玻璃在1.3 μm具有较好的发光性能,荧光寿命在440~530μs之间,当玻璃组成位于化学门槛即平均配位数为2.73时玻璃的发光强度最强.

  14. 尖晶石型复合硫化物的合成和性能%Synthesis and Property of Composite Chalcogenide with Spinel Structure

    Institute of Scientific and Technical Information of China (English)

    井艳; 高文亮; 孙娟娟; 杨韬

    2013-01-01

    Spinel compound is an important functional material with variable structure and application potential,and is widely investigated in the field of magnetic material,photoelectric material,electrode material,semiconductive material and catalytic material.Because S atom has larger atomic radii than O atom,composite chalcogenide (AB2S4) exhibits more complicated physical properties than composite oxides (AB2O4),so this type of compounds have attached more attentions and been investigated by many researchers over the world.This paper aims to review their synthesis methods and application fields,and the developmental trends for spinel compounds are also prospected.%尖晶石型化合物是一类具有丰富结构类型和应用潜力的功能材料,其在磁性材料、光电材料、电极材料、超导材料、催化材料等领域具有巨大的应用前景.对于硫系尖晶石型化合物AB2S4,由于S原子比O原子具有更大的原子半径,尖晶石型复合硫化物呈现出不同于复合氧化物的物理性质,近年来各国学者对其合成和物理性能进行了大量的探索和研究.本文总结了尖晶石型复合硫化物的合成方法及应用领域,并展望了其未来的发展方向.

  15. Non-isothermal crystallization kinetic studies on a ternary, Sb{sub 0.14}As{sub 0.38}Se{sub 0.48} chalcogenide semi-conducting glass

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R. [Physics Department, Faculty of Science, Al-Azhar University, Assuit 71542 (Egypt)]. E-mail: esam_ramadan2005@yahoo.com

    2006-03-15

    Crystallization kinetics of ternary, Sb{sub 0.14}As{sub 0.38}Se{sub 0.48}, chalcogenide glassy alloy was studied under non-isothermal conditions, using the formal theory of transformations for heterogeneous nucleation. The procedure was applied to the experimental data obtained by differential scanning calorimetry (DSc), using continuous-heating techniques. In addition, from the heating-rate dependence of the glass transition temperature, the glass transition activation energy was derived. The crystallization results are analyzed, and both the activation energy of crystallization process and the crystallization mechanism are characterized. The phases at which the alloy crystallizes after the thermal process have been identified by X-ray diffraction. The diffractogram of the transformed material indicates the presence of microcrystallites of Sb{sub 2}Se{sub 3} and AsSe, remaining an additional amorphous matrix.

  16. Theoretical Studies on Mid-Infrared Gain Characteristics of Erbium-Doped Chalcogenide Glass Fibers%掺铒硫系玻璃光纤的中红外增益特性模拟研究

    Institute of Scientific and Technical Information of China (English)

    於杏燕; 戴世勋; 周亚训; 王训四; 张培晴; 刘永兴; 徐铁峰; 聂秋华

    2012-01-01

    The Er3+ doped (the mass fraction is 1 %) Ga5 Ge20 Sb1o S65 chalcogenide glasses are fabricated and the refractive index, absorption spectrum and emission spectra are measured. The spontaneous emission probability, absorption cross-section and emission cross-section are calculated using the theories of Judd-Ofelt and the Futchbauer-Ladenburg equation. Based on the rate equations and light propagation equations, the numerical simulations on mid-infrared gain characteristics for the Er3+ doped Ga5Ge2o Sb1o S65 chalcogenide glass fiber are calculated. Effects of energy transfer between Er3+ levels due to cross-relaxation, cooperative up-conversion and excited state absorption are considered in simulation. The results show that the Er3+ doped Gas Ge20 Sbio S65 chalcogenide glass fiber has a bigger signal mid-infrared gain and wider mid-infrared gain spectrum, and its maximum signal gain and gain width at 20 dB exceeds 40 dB and 200 nm, respectively. The results indicate that the Er3+ doped Ga5Ge2oSb10S65 chalcogenide glass is a better gain medium which can be applied to broadband amplifiers in mid-infrared.%实验制备了Er3+掺杂质量分数为1%的Ga5 Ge20 Sb10 S65硫系玻璃,测试了其折射率、吸收光谱和荧光光谱,利用Judd-Ofelt和Futchbauer-Ladenburg理论计算了Er3+离子的自发辐射几率、吸收截面和受激发射截面等光谱参数.在综合考虑Er3+离子的交叉弛豫、能量上转换和激发态吸收效应的基础上,应用四能级粒子数速率-光功率传输方程模型,模拟计算了Er3+掺杂Ga5 Ge20 Sb10S65硫系玻璃光纤的中红外2.74 μm波段的增益特性.结果显示,Er3+掺杂硫系玻璃光纤在2.74 μm中红外波段具有较高的信号增益和较宽的增益谱,最大增益值和20 dB增益带宽分别超过了40 dB和200 nm,表明其是可用于中红外2.74 μm波段宽带放大的理想增益介质.

  17. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides); Synthese assistee par faisceau d'ions d'agregats dans les verres (argent et chalcogenures de plomb)

    Energy Technology Data Exchange (ETDEWEB)

    Espiau de Lamaestre, R

    2005-04-15

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  18. Preparation and Characterization of a Homoleptic Vanadium(III) Amide Complex and Its Transformation into Terminal Chalcogenide Derivatives [(3,5-Me(2)Ph)AdN](3)V=E (E = S, Se; Ad = Adamantyl).

    Science.gov (United States)

    Ruppa, Kamalesh B. P.; Desmangles, Nathalie; Gambarotta, Sandro; Yap, Glenn; Rheingold, Arnold L.

    1997-03-12

    Reaction of VCl(3)(THF)(3) with (3,5-Me(2)Ph)AdNLi.Et(2)O (Ad = adamantyl) yields the homoleptic vanadium complex [(3,5-Me(2)Ph)AdN](3)V (1), which reacts with chalcogens E (E = S, Se) to yield diamagnetic terminal chalcogenide derivatives [(3,5-Me(2)Ph)AdN](3)V=E [E = S (3a), Se (3b)] Crystal data for 1 and 3a are as follows. 1: C(54)H(72)N(3)V, fw 814.09, triclinic P&onemacr;, a = 10.441(1) Å, b = 11.648(4) Å, c = 19.321(2) Å, alpha = 83.69(2) degrees, beta = 83.89(1) degrees, gamma = 82.42(2) degrees, Z = 2. 3a: C(54)H(72)N(3)VS.(1)/(2)Et(2)O, fw 883.25, monoclinic C2/c, a = 43.400(9) Å, b = 11.744(3) Å, c = 20.705(4) Å, beta = 113.05(1) degrees, Z = 8.

  19. Soluble precursors for CuInSe2, CuIn(1-x)Ga(x)Se2, and Cu2ZnSn(S,Se)4 based on colloidal nanocrystals and molecular metal chalcogenide surface ligands.

    Science.gov (United States)

    Jiang, Chengyang; Lee, Jong-Soo; Talapin, Dmitri V

    2012-03-21

    We report a new platform for design of soluble precursors for CuInSe(2) (CIS), Cu(In(1-x)Ga(x))Se(2) (CIGS), and Cu(2)ZnSn(S,Se)(4) (CZTS) phases for thin-film potovoltaics. To form these complex phases, we used colloidal nanocrystals (NCs) with metal chalcogenide complexes (MCCs) as surface ligands. The MCC ligands both provided colloidal stability and represented essential components of target phase. To obtain soluble precursors for CuInSe(2), we used Cu(2-x)Se NCs capped with In(2)Se(4)(2-) MCC surface ligands or CuInSe(2) NCs capped with {In(2)Cu(2)Se(4)S(3)}(3-) MCCs. A mixture of Cu(2-x)Se and ZnS NCs, both capped with Sn(2)S(6)(4-) or Sn(2)Se(6)(4-) ligands was used for solution deposition of CZTS films. Upon thermal annealing, the inorganic ligands reacted with NC cores forming well-crystallized pure ternary and quaternary phases. Solution-processed CIS and CZTS films featured large grain size and high phase purity, confirming the prospects of this approach for practical applications. PMID:22329720

  20. Nonlinear Optical Properties of Silver Composited Ge-In-S-CsI Chalcogenide Glasses%银复合的Ge-In-S-CsI硫系玻璃的非线性光学性能研究

    Institute of Scientific and Technical Information of China (English)

    许银生; 成俊雯; 戚嘉妮; 鲁珊珊; 鲁克伦; 徐建伟; 邵琦芬; 戴世勋

    2014-01-01

    通过真空熔融淬冷法制备了银复合的70GeS2-20In2S3-10CsI 硫系玻璃样品,利用 Z-扫描技术研究了玻璃样品在800 nm 处三阶非线性光学性质,发现引入 Ag 可提高其折射率 n 和非线性折射率γ, n 从2.204增加至2.4087,γ从23.3×10-18 m2/W增加到30.5×10-18 m2/W,此外非线性响应时间从70 fs增加到79 fs。热处理对玻璃的非线性光学性能的影响研究显示,热处理后样品的γ增加至44.3×10-18 m2/W,是As2Se3玻璃的两倍多。发现析晶后带隙变小(吸收边红移)导致非线性吸收系数β减小,使得样品的品质因子提高至3.3。Ag复合的硫系玻璃及玻璃陶瓷非线性折射率大、品质因子高、非线性响应快,有望用于全关开关等各类非线性光学器件中。%In this study, the Ag doped 70GeS2-20In2S3-10CsI chalcogenide glasses were synthesized by vac-uumed melting-quenching technique. The third nonlinear optical properties were studied using Z-Scan technique at 800 nm. After being introduced Ag into the glass, both the linear and nonlinear refraction index γ increased from 2.204 to 2.2087 and from 23.3×10-18 to 30.5×10-18 m2/W, respectively. Besides, the nonlinear response time increased from 70 fs to 79 fs. The further heat treatment also enhanced the nonlinear refraction index up to 44.3×10-18 m2/W, 2 folds higher than that of As2Se3. Meanwhile, the nonlinear absorption coefficientβdecreased because the bandgap decreased with the thermal heat treatment. However, the highest figure of merit (FOM) is 3.3, which is enough for the nonlinear optics. Large nonlinear refraction index, high FOM, and fast response time ensured that the Ag-composited chalcogenide glass and glass ceramics can find applications in nonlinear optics.

  1. Isomorphism of anhydrous tetrahedral halides and silicon chalcogenides: energy landscape of crystalline BeF2, BeCl2, SiO2, and SiS2.

    Science.gov (United States)

    Zwijnenburg, Martijn A; Corà, Furio; Bell, Robert G

    2008-08-20

    We employ periodic density functional theory calculations to compare the structural chemistry of silicon chalcogenides (silica, silicon sulfide) and anhydrous tetrahedral halides (beryllium fluoride, beryllium chloride). Despite the different formal oxidation states of the elements involved, the divalent halides are known experimentally to form crystal structures similar to known SiX2 frameworks; the rich polymorphic chemistry of SiO2 is however not matched by divalent halides, for which a very limited number of polymorphs are currently known. The calculated energy landscapes yield a quantitative match between the relative polymorphic stability in the SiO2/BeF2 pair, and a semiquantitative match for the SiS2/BeCl2 pair. The experimentally observed polymorphs are found to lie lowest in energy for each composition studied. For the two BeX2 compounds studied, polymorphs not yet synthesized are predicted to lie very low in energy, either slightly above or even in between the energy of the experimentally observed polymorphs. The experimental lack of polymorphism for tetrahedral halide materials thus does not appear to stem from a lack of low-energy polymorphs but more likely is the result of a lack of experimental exploration. Our calculations further indicate that the rich polymorphic chemistry of SiO2 can be potentially matched, if not extended, by BeF2, provided that milder synthetic conditions similar to those employed in zeolite synthesis are developed for BeF2. Finally, our work demonstrates that both classes of materials show the same behavior upon replacement of the 2p anion with the heavier 3p anion from the same group; the thermodynamic preference shifts from structures with large rings to structures with larger fractions of small two and three membered rings.

  2. Chalcogenide aerogels as sorbents for radioactive iodine

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, Kota S.; Sarma, Debajit; Malliakas, Christos; Polychronopoulou, Kyriaki; Riley, Brian J.; Pierce, David A.; Chun, Jaehun; Kanatzidis, Mercouri G.

    2015-04-14

    Iodine (129I) is one of the radionuclides released in nuclear fuel reprocessing and poses risk to public safety due to its involvement in human metabolic processes. In order to prevent the leaching of hazardous radioactive iodine into the environment, its effective capture and sequestration is pivotal. In the context of finding a suitable matrix for capturing radioactive iodine the chalcogels, NiMoS4, CoMoS4, Sb4Sn4S12, Zn2Sn2S6, and CoSx (x = 4-5) were explored as iodine sorbents. All the chalcogels showed high uptake, reaching up to 225 mass% (2.25 g/g) of the final mass owing to strong chemical and physical iodine-chalcogen interactions. Analysis of the iodine-loaded specimens revealed that the iodine chemically reacted with Sb4Sn4S12, Zn2Sn2S6, and CoSx to form metal complexes SbI3, SnI4, and, KI respectively. The NiMoS4 and CoMoS4 chalcogels did not appear to undergo a chemical reaction with iodine since iodide complexes were not observed with these samples. Once heated, the iodine-loaded chalcogels released iodine in the temperature range of 75 °C to 220 °C, depending on the nature of iodine speciation. In the case of Sb4Sn4S12 and Zn2Sn2S6 iodine release was observed around 150 °C in the form of SnI4 and SbI3, respectively. The NiMoS4, CoMoS4, and CoSx released iodine at ~75 °C, which is consistent with physisorbed iodine. Preliminary investigations on consolidation of iodine-loaded Zn2Sn2S6 with Sb2S3 as a glass forming additive showed the content of iodine in consolidated glass ingots at around 25 mass%.

  3. Optical micro-resonators in chalcogenide glass

    OpenAIRE

    Elliott, Gregor Robert

    2009-01-01

    This thesis focuses on the production of gallium lanthanum sulphide (GLS) microspheres and their potential uses. Microspheres, and micro-resonators in general, have attracted considerable attention because of their promise in all-optical-switching, micro-lasers, multiplexers and many other applications. In this thesis, several applications have been investigated, culminating in the demonstration of laser action in a neodymium doped GLS microsphere. The possibility of using microspheres as bal...

  4. Ultrabroadband terahertz spectroscopy of chalcogenide glasses

    DEFF Research Database (Denmark)

    Zalkovskij, Maksim; Bisgaard, Christer Zoffmann; Novitsky, Andrey;

    2012-01-01

    absorption coefficient is found for both glasses. We observe the breakdown of the universal power-law dependence of the absorption coefficient due to atomic vibrations observed at low THz frequencies in disordered materials, and see the transition to localized vibrational dynamics for the As2S3 compound at...

  5. New Directions in Metal Chalcogenide Nanochemistry

    Science.gov (United States)

    Thomson, Jordan W.

    Colloidal semiconductor nanocrystals have shown great promise in functional devices such as solar cells and LEDs, but still relatively little is understood about the chemistry of their formation and resulting structure. In this thesis, we describe the results of our study of ultrathin Bi2S3 nanowires, part of the emerging class of materials at the transition from molecular scale clusters to nanowires, from a chemical perspective. Using a complementary suite of techniques, we propose an atomically precise model of the nanowires accounting for both the inorganic core structure and ligand-surface interaction for purified dispersions. The growth process of the nanowires was studied using in situ NMR on reaction mixtures and information on the growth and reactivity not attainable with purified dispersions was gained. The small molecule reactivity of the sulfur-oleylamine precursor was elucidated and it was shown that H2S is produced in situ leading to the formation of Bi2S3. This knowledge allowed for the extension of the sulfur-oleylamine precursor to SemS n-oleylamine, which produces H2S and H2Se in situ leading to the formation of homogeneous solid-solution PbS xSe1-x nanocrystals with tunable stoichiometry. Through this work, we elucidated each stage of the nanowire formation from small molecule reactivity, to growth process, to solution phase structure.

  6. Characterising refractive index dispersion in chalcogenide glasses

    DEFF Research Database (Denmark)

    Fang, Y.; Sojka, L.; Jayasuriya, D.;

    2016-01-01

    Much effort has been devoted to the study of glasses that contain the chalcogen elements (sulfur, selenium and tellurium) for photonics' applications out to MIR wavelengths. In this paper we describe some techniques for determining the refractive index dispersion characteristics of these glasses....

  7. Superconductivity in lanthanum chalcogenides under pressure

    International Nuclear Information System (INIS)

    In this thesis the pressure dependence of the superconducting transition temperature of La3S4, La3Se4, La3Te4, La2Se2S2, and La2Sesub(3,6) Tesub(0,4) is investigated up to 4,5 GPa. A pressure cell is reported which allows also the measurement of the magnetic susceptibility under pressure. The calculated density of states describe the increase of the critical temperature very well in the frame of Mc Millans equation. (TWO)

  8. Chalcogenide Materials for Solar Energy Conversion

    Directory of Open Access Journals (Sweden)

    Péter Turmezei

    2004-11-01

    Full Text Available The problem of electrical energy storage can possibly be solved with the help of electrochemical solar cells, which are suitable to generate either electrical energy or hydrogen gas under special conditions. The greatest problem of the electrochemical solar cell technology is to find novel materials which have appropriate properties for electrochemical energy conversion. In this work Cd4GeSe6, a novel material for electrochemical solar cells, will be presented.

  9. Tm3+掺杂Ge-Ga-S玻璃微球-石英光纤锥耦合系统的荧光回廊模特性∗%Fluorescence whisp ering gallery mo des in Tm3+-dop ed Ge-Ga-S chalcogenide glasses microsphere-silica fib er taper coupling system

    Institute of Scientific and Technical Information of China (English)

    张兴迪; 吴越豪; 杨正胜; 戴世勋; 张培晴; 张巍; 徐铁锋; 张勤远

    2016-01-01

    Microsphere resonators based on chalcogenide glasses combine the superior optical properties of microsphere res-onators (such as high Q-factors and small mode volumes) and excellent material properties of chalcogenide glasses in the infrared spectrum (such as good transmissivities, high refractive indices, and low phonon energies), and thus have promising applications in the fields of low-threshold infrared lasers, nonlinear Raman amplifiers/lasers, and narrow band-width infrared filters. In this work, the infrared microsphere resonators are built by using a novel chalcogenide glass composition of 75 GeS2-15 Ga2S3-10 CsI (Ge-Ga-S), doped with 1.3 wt% Tm. Compared with previously reported chalcogenide micro-sphere resonators fabricated with As2S3 and gallium lanthanum sulfide (Ga-La-S) glasses, the proposed Ge-Ga-S glass does not contain the toxic element of As nor the expensive rare earth element of La, and thus is more environmentally friendly and cost-effective for fabricators and users. We first fabricate bulk Ge-Ga-S glasses by using the facility in our laboratory. After measuring the absorption and fluorescence spectra of bulk glasses, they are crushed into powders and the powders are blown downwards through an inert-gas-filled vertical furnace (temperature set at 1000 ◦C). Molten glass powders are transformed into high-quality microspheres in the furnace due to surface tension. Thousands of microspheres with diameters ranging from 50 to 200 µm can be made in one fabrication process. By using optical microscopy and scanning electron microscopy, a microsphere with high surface quality is selected for further optical characterization. The selected microsphere has a diameter of 72.84 µm, an eccentricity less than 1% (about 80 nm), and a Q-factor of 1.296 × 104. A silica fiber taper with a waist-diameter of 1.93 µm is fabricated as the coupling mechanism for the microsphere resonator. The coupling between the microsphere and the micro fiber taper is realized

  10. Ge20Sb15Se65硫系玻璃光子晶体光纤的中红外色散特性%Dispersion Properties of Ge20Sb15Se65 Chalcogenide Glass Photonic Crystal Fiber for Mid-IR Region

    Institute of Scientific and Technical Information of China (English)

    刘永兴; 张培晴; 许银生; 戴世勋; 王训四; 徐铁峰; 聂秋华

    2012-01-01

    硫系玻璃与石英玻璃相比具有高折射率(2.0~3.5)、低声子能量<350 cm-1)、优良的中远红外透过性能(可至25 μm)等特性,本文制备了一种在中红外具有优良透过特性的无As环保型Ge20Sb15Se65硫系玻璃材料,以此为基质材料设计了一种三层空气孔结构光子晶体光纤,利用多极法对光纤的中红外色散特性进行了数值模拟,系统研究了结构参量孔径d、孔间距Λ以及d/Λ对其色散特性的影响,分析表明:通过改变包层空气孔直径d或空气孔间距Λ,可灵活的调节光子晶体光纤的零色散波长向短波或长波方向移动,通过优化结构参量发现,当A=3 μm,d/A =0.35附近变化时,可获得3~5 μm色散平坦,且色散值小于5 ps· nm-1·km-1的光子晶体光纤.%Compared with silica glass, chalcogenide glass possesses some unique advantages, such as high refractive index (2. 0~3. 5). Low phonon energy (lower than 350 cm-1), and large infrared transmission window (up to 25 μm). In this paper, a kind of environmental protected Ge20 Sb15 Se65 chalcogenide glass was prepared, which showed good transmission in IR range. Based on this glass, a photonic crystal fiber with three rings air holes was designed. Multi-pole method was employed to study the dispersion properties of the designed photonic crystal fiber. The relationship between fiber structure parameters (the air diameter d, period A and the ratio s/A and dispersion properties was presented. The simulation results showed that the zero dispersion point of photonic crystal fiber can be flexibility tuned to short or long wavelength region by control the fiber structure parameters. Finally, by optimizing the sturcure parameters, the dispersion flat photonic crystal fiber through of 3~5 μm was obtained, with the dispersion value less than 5 ps · ran-1 · km-1.

  11. 新型远红外Ge-Te-Se-Sn硫系玻璃的热学与光学性质研究%Reaserch on Thermal and Optical Properties of Novel Ge-Te-Se-Sn Far Infrared Transmitting Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    孙杰; 聂秋华; 王训四; 戴世勋; 徐铁峰; 章向华; Bruno Bureau; Catherine Boussard; Clement Conseil

    2011-01-01

    采用熔融淬冷法制备了新型远红外Te基硫系玻璃Ge20-xTe65 Se15 Snx(x=0,2,4).在Ge-Te-Se玻璃的基础上,通过引入重金属Sn,研究其对玻璃组成、结构和性能的影响.测试了样品的中红外热成像、X射线衍射(XRD)图谱、差热分析曲线(DSC)、可见/近红外吸收光谱、红外透射光谱.利用经典的Tauc方程计算了样品的光学带隙,根据金属标准和能量带隙理论讨论了玻璃光学带隙与组分变化的关系.分析结果表明,Ge-Te-Se-Sn玻璃具有良好的热稳定性,随着Sn的引入,玻璃的光学带隙减小,短波吸收截止边发生红移,但玻璃的红外截止波长基本不变.此外Sn可以有效减弱Ge-O杂质吸收峰的强度,提高玻璃红外透射性能.%A novel series of Ge20-x Te65 Se15 Snx ( x = 0,2,4 ) chalcogenide glasses is prepared by traditional melt-quenching method. Infrared thermal (8~12 μm) image. X-ray diffraction (XRD), differential scanning calorimetry (DSC), visible/near-infrared absorption spectroscopy and infrared transmission spectra are adopted to analyze the composition, structure and performance of the Ge-Te-Se glasses system with addition of Sn. The Tauc equation is used to calculate the direct and indirect optical band gap. Based on the metallization criterion and band gap energy theory, the relation between optical band gap and composition is investigated. The results show that Ge-Te-Se-Sn glasses have good thermal stability. With the addition of Sn, the optical band gap of glass samples decreases, the short-wavelength edges shift to a longer wavelength, and the infrared cut-off wavelength almost keeps unchanged. Sn can weaken the intensity of the Ge-0 absorption peak and improve the infrared transmission properties of glass samples.

  12. Rare-earth transition-metal chalcogenides Ln3MGaS7 (Ln=Nd, Sm, Dy, Er; M=Co, Ni) and Ln3MGaSe7 (Ln=Nd, Sm, Gd, Dy, M=Co; Ln=Nd, Gd, Dy, M=Ni)

    International Nuclear Information System (INIS)

    Fifteen new rare-earth transition-metal chalcogenides, Ln3MGaS7 (Ln=Nd, Sm, Dy, Er; M=Co, Ni) and Ln3MGaSe7 (Ln=Nd, Sm, Gd, Dy, M=Co; Ln=Nd, Gd, Dy, M=Ni), have been synthesized by solid state reactions. They are isostructural, adopt Ce3Al1.67S7—related structure type, and crystallize in the non-centrosymmetric hexagonal space group P63. They adopt a three-dimensional framework composed of LnQ7 monocapped trigonal prisms with the interesting [MQ3]4− chains and isolated GaQ4 tetrahedra lying in two sets of channels in the framework. The magnetic susceptibility measurements on Ln3CoGaQ7 (Ln=Dy, Er, Q=S; Ln=Dy, Q=Se) indicate that they are paramagnetic and obey the Curie–Weiss law over the entire experimental temperature, while the magnetic susceptibility of Sm3CoGaSe7 deviates from the Curie–Weiss law as a result of the crystal field splitting. - Graphical abstract: Ln3MGaS7 (Ln=Nd, Sm, Dy, Er; M=Co, Ni) and Ln3MGaSe7 (Ln=Nd, Sm, Gd, Dy, M=Co; Ln=Nd, Gd, Dy, M=Ni) adopt a three-dimensional framework composed of LnQ7 monocapped trigonal prisms with interesting [MQ3]4− chains and isolated GaQ4 tetrahedra lying in two sets of channels in the framework. - Highlights: • New compounds, Ln3MGaQ7 (Ln=rare-earth; M=Co, Ni; Q=S, Se), were synthesized. • They are isostructural and crystallize in the noncentrosymmetric space group P63. • They adopt a three-dimensional framework built by LnQ7 monocapped trigonal prisms. • Ln3CoGaQ7 (Ln=Dy, Er; Q=S, Se) are paramagnetic and obey the Curie–Weiss law. • The magnetic susceptibility of Sm3CoGaSe7 deviates from the Curie–Weiss law

  13. Structure and optical properties of CdSe chalcogenide semiconductors

    Science.gov (United States)

    Ganaie, Mohsin; Prince, Zulfequar, M.

    2015-08-01

    CdSe bulk sample has been prepared by melt-quenching technique and were characterized with XRD, SEM, FTIR, and electrical measurements. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of 10-6 Torr. An XRD measurement reveals the coexistence of glassy and crystalline phase in bulk sample. SEM studies shows single phase, porous, and granular surface morphology of powder CdSe alloy. Optical properties (optical gap, absorption coefficient, extinction coefficient, refractive index) are calculated in the range of 190-1100nm. Analysis of the optical measurement shows that the non-direct transition is predominant and the band gap come outs to be 1.751eV. Dc conductivity measurement is thermally activated process which shows the semiconducting nature of the sample having activation energy 0.31eV.

  14. Mechanism of defect production in irradiated chalcogenide glass semiconductors

    International Nuclear Information System (INIS)

    Defect production in thin semiconductor layers of irradiated glass arsenic trisulfide was studied by using the optical modulation spectroscopy of vibrating absorption bands of basic structural fragments and complexes. It is shown, that at structural microscopic level the effects being observed are related to pairing of the diamagnetic over- and undercoordination defects: (As2-; S3+), (As4+; S1-), (S1-; S3+) and (As2-; As4+) and also defects (As2+; S1+) with partial annihilation of As2+ and S1-

  15. Chalcogenide optical microwires cladded with fluorine-based CYTOP.

    Science.gov (United States)

    Li, Lizhu; Abdukerim, Nurmemet; Rochette, Martin

    2016-08-22

    We demonstrate optical transmission results of highly nonlinear As2Se3 optical microwires cladded with fluorine-based CYTOP, and compare them with microwires cladded with typical hydrogen-based polymers. In the linear optics regime, the CYTOP-cladded microwire transmits light in the spectral range from 1.3 µm up to >2.5 µm without trace of absorption peaks such as those observed using hydrogen-based polymer claddings. The microwire is also pumped in the nonlinear optics regime, showing multiple-orders of four-wave mixing and supercontinuum generation spanning from 1.0 µm to >4.3 µm. We conclude that with such a broadband transparency and high nonlinearity, the As2Se3-CYTOP microwire is an appealing solution for nonlinear optical processing in the mid-infrared. PMID:27557174

  16. Metrology of achromatic diffractive features on chalcogenide lenses

    Science.gov (United States)

    Scordato, M.; Nelson, J.; Schwertz, K.; Mckenna, P.; Bagwell, J.

    2015-10-01

    Achromatic diffractive features on lenses are widely used in industry for color correction, however there is not a welldefined standard to quantify the performance of the lenses. One metric used to qualify a lens is the sag deviation from the nominal lens profile. Imperfections in the manufacturing of the diffractive feature may cause scattering and performance loss. This is not reflected in sag deviation measurements, therefore performance measurements are required. There are different quantitative approaches to measuring the performance of an achromatic diffractive lens. Diffraction efficiency, a measure of optical power throughput, is a common design metric used to define the percent drop from the modulation transfer function (MTF) metric. The line spread function (LSF) shows a layout of the intensity with linear distance and an ensquared energy specification can be implemented. The MTF is a common analysis tool for assemblies and can be applied to a single element. These functional tests will be performed and compared with diffractive lenses manufactured by different tool designs. This paper displays the results found with various instruments. Contact profilometry was used to inspect the profile of the diffractive elements, and a MTF bench was used to characterize lens performance. Included will be a discussion comparing the results of profile traces and beam profiles to expected diffraction efficiency values and the effects of manufacturing imperfections.

  17. Induced radiation of thin lead chalcogenide films under photoexcitation

    International Nuclear Information System (INIS)

    Induced radiation of thin polycrystalline films of PbSe, PbFe, PbS photo excited by the neodimium laser was found out. The threshold excitation at 77 deg K was about 102 - 103 W/cm2. The radiation spectra of PbSe at 10 - 80 deg K consisted of single lines in the hw range 165 - 200 MeV. The width of the lines was determined by the destruction of the spectrometer. Model of the initiation of induced radiation in active dielectric waveguide with crosswise, scattering of radiation on the heterogeneous sections is being discussed

  18. Crystallization study of Sn additive Se–Te chalcogenide alloys

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Rahim, M.A.; Gaber, A.; Abu-Sehly, A.A.; Abdelazim, N.M., E-mail: nana841@hotmail.co.uk

    2013-08-20

    Highlights: • The aim of the work deals with studying the crystallization kinetics by using different method. • Values of various kinetic parameters were calculated. • The results indicate that the rate of crystallization is related to the thermal stability and glass forming ability. - Abstract: Results of differential thermal analysis (DTA) under non-isothermal conditions of glasses Se{sub 90−x}Te{sub 10}Sn{sub x} (x = 0, 2.5, 5 and 7 at.%) are reported and discussed. The glass transition temperature (T{sub g}), the onset crystallization temperature (T{sub c}) and the peak temperature of crystallization (T{sub p}) were found to be dependent on the compositions and the heating rate. Values of various kinetic parameters such as activation energy of glass transition (E{sub g}), activation energy of crystallization (E{sub c}), rate constant (K{sub p}), Hurby number (H{sub r}) and the order parameter (n) were determined. For the present systems, the results indicate that the rate of crystallization is related to thermal stability and glass forming ability (GFA). According to the Avrami exponent (n), the results show a one dimensional growth for the composition Se{sub 90}Te{sub 10} and a three dimensional growth for the three other compositions. The crystalline phases resulting from DTA and (SEM) have been identified using X-ray diffraction.

  19. Electron microscopy of iron chalcogenide FeTe(Se) films

    Energy Technology Data Exchange (ETDEWEB)

    Shchichko, I. O.; Presnyakov, M. Yu. [National Research Centre “Kurchatov Institute” (Russian Federation); Stepantsov, E. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Kazakov, S. M.; Antipov, E. V. [Moscow State University (Russian Federation); Makarova, I. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Vasil’ev, A. L., E-mail: a.vasiliev56@gmail.com [National Research Centre “Kurchatov Institute” (Russian Federation)

    2015-05-15

    The structure of Fe{sub 1+δ}Te{sub 1−x}Se{sub x} films (x = 0; 0.05) grown on single-crystal MgO and LaAlO{sub 3} substrates has been investigated by transmission and scanning transmission electron microscopy. The study of Fe{sub 1.11}Te/MgO structures has revealed two crystallographic orientation relationships between the film and substrate. It is shown that the lattice mismatch between the film and substrate is compensated for by the formation of misfit dislocations. The Burgers vector projection is determined. The stresses in the film can partially be compensated for due to the formation of an intermediate disordered layer. It is shown that a FeTe{sub 0.5}Se{sub 0.5} film grown on a LaAlO{sub 3} substrate is single-crystal and that the FeTe{sub 0.5}Se{sub 0.5}/LaAlO{sub 3} interface in a selected region is coherent. The orientation relationships between the film and substrate are also determined for this case.

  20. PAL signature of physical ageing in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Ingram, Adam; Kozdras, Andrzej [Physics Faculty of Opole University of Technology, 75, Ozimska Str., Opole 45370 (Poland); Shpotyuk, Oleh [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa 42201 (Poland); Golovchak, Roman [Physics Faculty of Opole University of Technology, 75, Ozimska Str., Opole 45370 (Poland); Lviv Scientific Research Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska Str., Lviv 79031 (Ukraine)

    2012-05-15

    Kinetics of physical ageing (PhA) far below the glass transition temperature (T{sub g}) is studied by positron annihilation lifetime and differential scanning calorimetry techniques for vitreous As{sub 20}Se{sub 80} as typical representative of network glasses. The increased density fluctuations are shown to be responsible for the initial stage of PhA in this glass at below-T{sub g} temperatures. These fluctuations are correlated with changes in thermodynamic parameters of structural relaxation through the glass-to-supercooled liquid transition interval. General shrinkage, occurred during the next stage of PhA, is shown to be determined by the ability of system to release these redundant open volumes from the glass bulk through densification process of glass network. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass

    CERN Document Server

    Hughes, M; Rutt, H; Hewak, D

    2014-01-01

    Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us and 4 % respectively. From the available spectroscopic data we propose the vanadium ions valence to be 3+ and be in tetrahedral coordination The results indicate potential for development of a laser or optical amplifier based on V:GLS.

  2. Electron microscopy of iron chalcogenide FeTe(Se) films

    International Nuclear Information System (INIS)

    The structure of Fe1+δTe1−xSex films (x = 0; 0.05) grown on single-crystal MgO and LaAlO3 substrates has been investigated by transmission and scanning transmission electron microscopy. The study of Fe1.11Te/MgO structures has revealed two crystallographic orientation relationships between the film and substrate. It is shown that the lattice mismatch between the film and substrate is compensated for by the formation of misfit dislocations. The Burgers vector projection is determined. The stresses in the film can partially be compensated for due to the formation of an intermediate disordered layer. It is shown that a FeTe0.5Se0.5 film grown on a LaAlO3 substrate is single-crystal and that the FeTe0.5Se0.5/LaAlO3 interface in a selected region is coherent. The orientation relationships between the film and substrate are also determined for this case

  3. Molecular solution processing of metal chalcogenide thin film solar cells

    OpenAIRE

    Yang, Wenbing

    2013-01-01

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (C...

  4. Shape Control and Functional Properties of Copper Chalcogenide Colloidal Nanocrystals

    OpenAIRE

    Li, Wenhua

    2013-01-01

    The high quality CuxS nanocrystals were synthesized (Chapter 3) and the profound understanding and skills to prepare colloidal nanocrystals has been obtained and improved. It revealed a very simple synthetic route not only for the systematic investigation on the size control of the copper sulfide nanodisks but also for studying the influence of different stoichiometric ratios on the shape of copper sulfide nanocrystals. An increase of the precursor concentration in the growth solution resulte...

  5. Packaged Chalcogenide Microsphere Resonator with High Q-factor

    OpenAIRE

    Wang, Pengfei; Ding, Ming; Lee, Timothy; Murugan, Ganapathy Senthil; Bo, Lin; Semenova, Yuliya; Wu, Qiang; Hewak, Dan; Brambilla, Gilberto

    2013-01-01

    The fabrication and characterization of a packaged As2S3 microsphere resonator coupled to a tapered fiber using a low refractive index UV-curable polymer are reported. Embedding provides an efficient means to remove the highest order whispering gallery modes in the microsphere resonator, thus cleaning the resonator spectrum. The device photosensitivity, useful for tuning, is still present and useable after the packaging process

  6. States of antimony and tin atoms in lead chalcogenides

    International Nuclear Information System (INIS)

    It is shown by Mössbauer spectroscopy of the 119Sb(119mSn) isotope that impurity antimony atoms in PbS, PbSe, and PbTe lattices are distributed between cation and anion sublattices. In n-type samples, the greatest part of antimony is located in the anion sublattice; in hole ones, in the cation sublattice. The tin atoms formed as a result of radioactive decay of 119Sb (antisite state) are electrically inactive in the anion sub-lattice of PbS and PbSe, while, in the cation sublattice, they form donor U− centers. Electron exchange between the neutral and doubly ionized tin U− centers via the allowed band states is observed. The tin atoms formed after radioactive decay of 119Sb are electrically inactive in the anion and cation sublattices of PbTe.

  7. Theoretical and experimental investigation of magnetotransport in iron chalcogenides

    Directory of Open Access Journals (Sweden)

    Federico Caglieris, Fabio Ricci, Gianrico Lamura, Albert Martinelli, A Palenzona, Ilaria Pallecchi, Alberto Sala, Gianni Profeta and Marina Putti

    2012-01-01

    Full Text Available We explore the electronic, transport and thermoelectric properties of Fe1+ySexTe1−x compounds to clarify the mechanisms of superconductivity in Fe-based compounds. We carry out first-principles density functional theory (DFT calculations of structural, electronic, magnetic and transport properties and measure resistivity, Hall resistance and Seebeck effect curves. All the transport properties exhibit signatures of the structural/magnetic transitions, such as discontinuities and sign changes of the Seebeck coefficient and of the Hall resistance. These features are reproduced by calculations provided that antiferromagnetic correlations are taken into account and experimental values of lattice constants are considered in DFT calculations. On the other hand, the temperature dependences of the transport properties can not be fully reproduced, and to improve the agreement between experiment and DFT calculations it is necessary to go beyond the constant relaxation time approximation and take into account correlation effects.

  8. Molecular solution processing of metal chalcogenide thin film solar cells

    Science.gov (United States)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum-based techniques and is partially attributed to the ease in controlling composition and CZTS phase through this technique. Based on this platform, comprehensive characterization on CZTS devices is carried out including solar cells and transistors. Especially defects properties are exploited in Chapter 4 targeting to identify the limiting factors for further improvement on CZTS solar cells efficiency. Finally, molecular structures and precursor solution stability have been explored, potentially to provide a universal approach to process multinary compounds.

  9. Connection between NMR and electrical conductivity in glassy chalcogenide fast ionic conductors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.H.

    1995-11-01

    The work documented in this thesis follows the traditional order. In this chapter a general discussion of ionic conduction and of glassy materials are followed by a brief outline of the experimental techniques for the investigation of fast ionic conduction in glassy materials, including NMR and impedance spectroscopy techniques. A summary of the previous and present studies is presented in the last section of this introductory chapter. The details of the background theory and models are found in the Chapter II, followed by the description of the experimental details in Chapter III. Chapter IV of the thesis describes the experimental results and the analysis of the experimental observations followed by the conclusions in chapter V.

  10. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  11. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers. PMID:27479495

  12. Augmented Z scheme blueprint for efficient solar water splitting system using quaternary chalcogenide absorber material.

    Science.gov (United States)

    Sarswat, Prashant K; Bhattacharyya, Dhiman; Free, Michael L; Misra, Mano

    2016-02-01

    Photoelectrochemical hydrogen (H2) production from water is a key method of addressing energy needs using an environmentally friendly approach. In the last two decades we have witnessed the evolution of many different expensive catalysts, photoelectrodes and related technologies, especially those involving precious metals and use of acidic or basic electrolytes for hydrogen production. Cu2ZnSnS4 (CZTS) is a relatively new candidate in the category of efficient photocathodes, due to its high absorption coefficient and near optimal energy band gap. In this paper, we demonstrate photoelectrochemical viability of CZTS in combination with other photoanodes such as TiO2, BiVO4, and WO3 for H2 production with the use of an electrolyte of near neutral pH, a single redox mediator, and insignificant potential biasing. A systematic study was performed to understand CZTS performance with each photoanode, band energetics of CZTS with other photoanodes, impedance behavior of each photoelectrode, and utility of a CZTS photocell in place of a CZTS photocathode. Our assessment indicates that a protected CZTS photocell performs well when used in a Z-scheme containing TiO2 nanotubular array-CZTS or nanocrystalline WO3-CZTS. Preliminary experiments indicated that apart from band energetics, porosity and effective surface area of the photoanodes play a crucial role in determining the photoelectrochemical performance of the system. PMID:26762553

  13. Mid-infrared supercontinuum generation in a suspended core chalcogenide fiber

    DEFF Research Database (Denmark)

    Møller, Uffe Visbech; Yu, Yi; Gai, Xin;

    The mid-infrared spectral region is of great interest because virtually all organic compounds display distinctive spectral fingerprints herein that reveal chemical information about them [1], and the mid-infrared region is therefore of key importance to many applications, including food quality...... control [2], gas sensing [3] and medical diagnostics [4] . We have used a low-loss suspended core As 38 Se 62 fiber with core diameter of 4.5 μ m and a zero - dispersion wavelength of 3.5 μ m to generate mid-infrared supercontinuum by pumping with an optical parametric amplifier delivering 320 fs pulses...... with a peak power of ~5.5 kW at a repetition rate of 21 MHz at different wavelengths from 3.3 to 4.7 μ m . By pumping at 4.4 μ m with a peak power of 5.2 kW coupled to the fiber a supercontinuum spanning from 1.7 to 7.5 μ m with an average output power of 15.6 mW was obtained. Figure 1 shows the results...

  14. Effect of Sb on the optical properties of the Ge-Se chalcogenide thin films

    Science.gov (United States)

    Abdel-Wahab, F.; Ali karar, N. N.; El Shaikh, H. A.; Salem, R. M.

    2013-08-01

    Thin films of Ge30-xSbxSe70 (x=0, 5, 10 and 15) were prepared by thermal evaporation technique. All samples were confirmed as amorphous according to XRD results. The complex dielectric functions and optical parameters of the films determined by using the Swanepoel's method from transmittance spectra at room temperature in the range of wavelength 400-1100 nm. It has been found that by increasing Sb content, the optical band gap decreases, while the refractive index and the extinction coefficient increase. The optical energy gap of the films under test was discussed in terms of the chemically ordered model (COM) and random covalent network model (RCNM). We confirmed, using Raman spectroscopy, by addition of Sb the intensity of Ge-Ge and Ge-Se bands decreased; however, Sb-Se, and Se-chain band increased, in agreement with COM and RCNM. The results of the refractive index were studied using the Wemple equation. The variations of the refractive index and real part of dielectric constant associated with the changes of the density were examined with the well-known Lorentz-Lorenz relation. The experimental results were found to be in good agreement with those of theoretical ones.

  15. Crystallization kinetics of Ge{sub 20}Te{sub 80} chalcogenide glasses doped with

    Energy Technology Data Exchange (ETDEWEB)

    Ziani, N. [Departement de physique, faculte des Sciences, universite des sciences et de la technologie d' oran, USTO BP1505, elm' naouar oran algerie, Oran (Algeria)]. E-mail: ziani_nossair@yahoo.fr; Belhadji, M. [Faculte des sciences, Universite Essenia Oran (Algeria)]. E-mail: nmaamar@yahoo.fr; Heireche, L. [Faculte des sciences, Universite Essenia Oran (Algeria); Bouchaour, Z. [Faculte des sciences, Universite Essenia Oran (Algeria); Belbachir, M. [Faculte des sciences, Universite Essenia Oran (Algeria)

    2005-04-15

    A study of kinetics of non-isothermal crystallization process for Ge{sub 20-x}Te{sub 80}Sb{sub x}(x=0,3,4,5) system was reported and interpreted in this work by using Matusita's model. From the differential scanning calorimetry (DSC) traces obtained under dynamic conditions, the activation energy of growth process and values of n and m which are numerical factors depending on crystallization mechanisms are evaluated. The validity of Matusita's model was ascertained by comparison with the results obtained by application of two well-known methods which are Ozawa and Kissinger ones.

  16. Amorphous chalcogenide semiconductors for dosimetry of high-energy ionizing radiation

    International Nuclear Information System (INIS)

    The possible application of amorphous chalogenide semiconductors as radiation-sensitive elements of high-energy (E>1 MeV) dosimetry systems are analyzed. It is shown that some of these materials are characterized by a broader region of absorbed doses and low-temperature thresholds of radiation induced bleaching than conventional colouring oxide glasses. (author)

  17. A simulation of the cluster structures in Ge-Se vitreous chalcogenide semiconductors

    OpenAIRE

    Gurin, V.; Shpotyuk, O.; Boyko, V

    2013-01-01

    A structure of germanium selenide glasses is simulated by the featured clusters built from the tetrahedral GeSe4 units up to the clusters with six germanium atoms (Ge6Se16H4 and Ge6Se16H8). Quantum chemical calculations at the DFT level with effective core potentials for Ge and Se atoms for the clusters of different composition reveal their relative stability and optical properties.

  18. Thermo-tunable hybrid photonic crystal fiber based on solution-processed chalcogenide glass nanolayers.

    Science.gov (United States)

    Markos, Christos

    2016-01-01

    The possibility to combine silica photonic crystal fiber (PCF) as low-loss platform with advanced functional materials, offers an enormous range of choices for the development of fiber-based tunable devices. Here, we report a tunable hybrid silica PCF with integrated As2S3 glass nanolayers inside the air-capillaries of the fiber based on a solution-processed glass approach. The deposited high-index layers revealed antiresonant transmission windows from ~500 nm up to ~1300 nm. We experimentally demonstrate for the first time the possibility to thermally-tune the revealed antiresonances by taking advantage the high thermo-optic coefficient of the solution-processed nanolayers. Two different hybrid fiber structures, with core diameter 10 and 5 μm, were developed and characterized using a supercontinuum source. The maximum sensitivity was measured to be as high as 3.6 nm/°C at 1300 nm. The proposed fiber device could potentially constitute an efficient route towards realization of monolithic tunable fiber filters or sensing elements. PMID:27538726

  19. Photoelectrochemical studies on aqueous suspensions of some nanometal oxide/chalcogenide semiconductors for hydrogen production

    Indian Academy of Sciences (India)

    Kasem K Kasem; Aubrey Finley

    2015-04-01

    Photoproduction of hydrogen was achieved by photolysis of aqueous suspensions of mixed TiO2/V2O5 or CdS/ZnS semiconductor (SC) nanoparticle in phosphate buffers containing [Fe(CN)6]4−. Manipulations of the band structure of the SC materials took place by either combining oxides/sulphides in binary mixtures or by modification of the SC surface with an organic semiconductor. Studies show that the bandgap of these mixed materials varied monotonically with the percent composition of the mixture. Furthermore, results show that maximum generation of hydrated electrons by [Fe(CN)6]4− occurred at pH 6. Mixtures of CdS/ZnS showed greater photoactivity than metal oxides TiO2/V2O5. On the other hand, surface-modified CdS or TiO2 gave much better photoreduction than the high percentage composite mixtures. The aqueous nanosystems used in these studies sustained their stability as indicated by the reproducibility of their photocatalytic activities.

  20. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2015-11-05

    Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

  1. Multi-milliwatt mid-infrared supercontinuum generation in a suspended core chalcogenide fiber

    DEFF Research Database (Denmark)

    Møller, Uffe Visbech; Yu, Yi; Kubat, Irnis;

    2015-01-01

    A low-loss suspended core As38Se62 fiber with core diameter of 4.5 μm and a zero-dispersion wavelength of 3.5 μm was used for mid-infrared supercontinuum generation. The dispersion of the fiber was measured from 2.9 to 4.2 μm and was in good correspondence with the calculated dispersion. An optical...... parametric amplifier delivering 320 fs pulses with a peak power of 14.8 kW at a repetition rate of 21 MHz was used to pump 18 cm of suspended core fiber at different wavelengths from 3.3 to 4.7 μm. By pumping at 4.4 μm with a peak power of 5.2 kW coupled to the fiber a supercontinuum spanning from 1.7 to 7...

  2. Large anharmonic effect and thermal expansion anisotropy of metal chalcogenides: The case of antimony sulfide

    Science.gov (United States)

    Gan, Chee Kwan; Soh, Jian Rui; Liu, Yun

    2015-12-01

    We derive a compact matrix expression for the linear thermal expansion coefficients (TECs) for a general orthorhombic system which relates elastic properties and integrated quantities based on deformation and mode dependent Grüneisen parameters and mode dependent heat capacities. The density of Grüneisen parameters Γ (ν ) as a function of frequency ν , weighted by the number of phonon modes, is introduced and found to be illuminating in interpreting the TEC results. Using density functional perturbation theory and Grüneisen formalism for thermal expansion, we illustrate the general usefulness of this method by calculating the linear and volumetric TECs of a low-symmetry orthorhombic compound antimony sulfide (Sb2S3 ), which belongs to a large class of technologically and fundamentally important materials. Even though negative Grüneisen parameters are found for deformations in all three crystal directions, the Γ (ν ) data rule out the occurrences of negative TECs at all temperatures. Sb2S3 exhibits a large thermal expansion anisotropy where the TEC in the b direction can reach as high as 13 ×10-6 K-1 at high temperatures, about two and seven times larger than the TECs in the c and a direction, respectively. Our work suggests a general and practical first-principles approach to calculate the thermal properties of other complicated low-symmetry systems.

  3. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Mokurala, Krishnaiah; Baranowski, Lauryn L.; de Souza Lucas, Francisco W.; Siol, Sebastian; van Hest, Maikel F. A. M.; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  4. A silicon-based two-dimensional chalcogenide: growth of Si₂Te₃ nanoribbons and nanoplates.

    Science.gov (United States)

    Keuleyan, Sean; Wang, Mengjing; Chung, Frank R; Commons, Jeffrey; Koski, Kristie J

    2015-04-01

    We report the synthesis of high-quality single-crystal two-dimensional, layered nanostructures of silicon telluride, Si2Te3, in multiple morphologies controlled by substrate temperature and Te seeding. Morphologies include nanoribbons formed by VLS growth from Te droplets, vertical hexagonal nanoplates through vapor-solid crystallographically oriented growth on amorphous oxide substrates, and flat hexagonal nanoplates formed through large-area VLS growth in liquid Te pools. We show the potential for doping through the choice of substrate and growth conditions. Vertical nanoplates grown on sapphire substrates, for example, can incorporate a uniform density of Al atoms from the substrate. We also show that the material may be modified after synthesis, including both mechanical exfoliation (reducing the thickness to as few as five layers) and intercalation of metal ions including Li(+) and Mg(2+), which suggests applications in energy storage materials. The material exhibits an intense red color corresponding to its strong and broad interband absorption extending from the red into the infrared. Si2Te3 enjoys chemical and processing compatibility with other silicon-based material including amorphous SiO2 but is very chemically sensitive to its environment, which suggests applications in silicon-based devices ranging from fully integrated thermoelectrics to optoelectronics to chemical sensors. PMID:25764295

  5. On the structural-optical correlations in radiation-modified chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kavetskyy, T; Tsmots, V [Solid State Microelectronics Laboratory, Drohobych Ivan Franko State Pedagogical University, 24 I. Franko Str., Drohobych, 82100 (Ukraine); Kaban, I; Hoyer, W [Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany); Shpotyuk, O, E-mail: kavetskyy@yahoo.com [Institute of Materials, Scientific Research Company ' Carat' , 202 Stryjska Str., Lviv, 79031 (Ukraine)

    2011-04-01

    In this work, we report our recent results on the gamma-irradiation-induced structural transformations in the Ge-Sb-S glasses as observed from the structural studies using high-energy synchrotron x-ray diffraction and extended x-ray absorption fine structure spectroscopy in comparison with the optical measurements using VIS/IR spectroscopy techniques. The structural-optical correlations in the radiation-induced effects are established. The structural changes upon irradiation are explained in the frames of the concept of coordination topological defects formation.

  6. Amorphous chalcogenide semiconductors for dosimetry of high-energy ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I. [Institute of Materials, Lviv (Ukraine). Dept. of New Perspective Developments

    1995-10-01

    The possible application of amorphous chalogenide semiconductors as radiation-sensitive elements of high-energy (E>1 MeV) dosimetry systems are analyzed. It is shown that some of these materials are characterized by a broader region of absorbed doses and low-temperature thresholds of radiation induced bleaching than conventional colouring oxide glasses. (author).

  7. Single gain peak from modulation instability in As2Se3 chalcogenide glass photonic crystal fiber

    Science.gov (United States)

    Wang, Helin; Yang, Aijun

    2016-09-01

    With the As2Se3 photonic crystal fiber (PCF), the effect of pump power and wavelength on modulation instability (MI) gain is studied in detail. Due to high Raman scattering effect and high nonlinearity of As2Se3 PCF, ultra-broadband MI gain is obtained when appropriate pump power and wavelength is chosen, and the optimal MI gain bandwidth reaches 2812 nm. More importantly, competing between Raman scattering and four-wave mixing results in a single gain peak observed in the anti-Stokes region of As2Se3 PCF when pump power is higher than about 3000 W, while there is no gain spectrum in the fiber Stokes region. The phenomenon is found for the first time, and the obtained single gain peak mainly results from Raman scattering effect.

  8. Diffraction anomalies in hybrid structures based on chalcogenide-coated opal photonic crystals

    CERN Document Server

    Voronov, M M; Yakovlev, S A; Kurdyukov, D A; Golubev, V G

    2014-01-01

    The results of spectroscopic studies of the diffraction anomalies (the so-called resonant Wood anomalies) in spatially-periodic hybrid structures based on halcogenide (GST225)-coated opal films of various thickness are presented. A theoretical analysis of spectral-angular dependencies of the Wood anomalies has been made by means of a phenomenological approach using the concept of the effective refractive index of waveguiding surface layer.

  9. Chalcogenide compounds made by pulsed laser deposition at 355 and 248 nm

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Cazzaniga, Andrea Carlo; Crovetto, Andrea;

    Thin films made by pulsed laser deposition may differ depending on the laser wavelength. We compared ZnS, Cu2SnS3 and a target enriched with SnS relative to Cu2SnS3 using 355 nm and 248 nm lasers......Thin films made by pulsed laser deposition may differ depending on the laser wavelength. We compared ZnS, Cu2SnS3 and a target enriched with SnS relative to Cu2SnS3 using 355 nm and 248 nm lasers...

  10. Tunable parametric amplifier for mid-IR application based on highly nonlinear chalcogenide material

    Energy Technology Data Exchange (ETDEWEB)

    Maji, Partha Sona; Roy Chaudhuri, Partha [Department of Physics, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-28

    A novel dispersion controlling technique towards attaining tunable parametric amplification based on highly nonlinear photonic crystal fibers has been investigated. Selective infiltration of the liquid into the air-holes leads to alter the zero dispersion wavelength towards a broader parametric gain in the mid-IR spectrum by only changing the temperature of the system externally. The dispersion profile specially the zero dispersion wavelengths can be well tuned around the pumping wavelength, thereby generating several hundred nanometer parametric bandwidth in near-IR to mid-IR region. The tunability of the photonic crystal fibers (PCFs) can also be useful for generating new frequencies in both the red- and blue-shifted regions far from the pumping wavelength. Our numerical calculations reveal that we could achieve very wide band fiber optic parametric amplifier both in the communication wavelength and in the IR region. Also two different types of PCFs can be used to achieve same broadband wavelength spectra however with a tradeoff between the fiber lengths and pump power.

  11. Tight Binding Calculation of Electric Field Gradients in Arsenic Chalcogenide Crystals and Glasses

    Science.gov (United States)

    Nelson, Chris B.; Taylor, P. Craig; Harrison, Walter A.

    2000-03-01

    We apply a tight binding approach to calculate the electric field gradient at As atoms due to three nearest neighbor chalcogen atoms in the two inequivalent As sites of crystalline As_2S_3, As_2Se_3, orthorhombic As (Or-As), and rhombohedral As (Rh-As). We first orthogonalize the 4s and 4p valence states on an As atom with respect to sp hybride states constructed on the three nearest neighbor chalcogen atoms. The orthogonalized As valence states are then othogonalized with respect to the As 2p and 3p core states using the Gramm-Schmidt procedure. The resulting state is used aa a first approximation to calculate the electric field gradient at the As nuclear site. Using Harrison's tight binding parameters,[1] which were constructed for tetrahedrally-coordinated semiconductors, we obtain excellent agreement with experiment for Rh-As and are within a factor of 2 ~ 4 for the Or-As, As_2S_3, As_2Se_3, crystal structures. Because the calculation depends only on the number of nearest neighbors it may be extendable to disordered systems, such as a glass. 1. S.Froyen and W.A. Harrison, Phys. Rev. B, 20, 2420 (1979).

  12. Forbidden phonon: Dynamical signature of bond symmetry breaking in the iron chalcogenides

    Science.gov (United States)

    Fobes, David M.; Zaliznyak, Igor A.; Tranquada, John M.; Xu, Zhijun; Gu, Genda; He, Xu-Gang; Ku, Wei; Zhao, Yang; Matsuda, Masaaki; Garlea, V. Ovidiu; Winn, Barry

    2016-09-01

    Investigation of the inelastic neutron scattering spectra in Fe1 +yTe1 -xSex near a signature wave vector Q =(1 ,0 ,0 ) for the bond-order wave (BOW) formation of parent compound Fe1 +yTe [D. Fobes et al., Phys. Rev. Lett. 112, 187202 (2014), 10.1103/PhysRevLett.112.187202] reveals an acoustic-phonon-like dispersion present in all structural phases. While a structural Bragg peak accompanies the mode in the low-temperature phase of Fe1 +yTe , it is absent in the high-temperature tetragonal phase, where Bragg scattering at this Q is forbidden by symmetry. Notably, this mode is also observed in superconducting FeTe0.55Se0.45 , where structural and magnetic transitions are suppressed, and no BOW has been observed. The presence of this "forbidden" phonon indicates that the lattice symmetry is dynamically or locally broken by magneto-orbital BOW fluctuations, which are strongly coupled to lattice in these materials.

  13. Combined hybrid functional and DFT+U calculations for metal chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Aras, Mehmet; Kılıç, Çetin, E-mail: cetin-kilic@gyte.edu.tr [Department of Physics, Gebze Institute of Technology, Gebze, Kocaeli 41400 (Turkey)

    2014-07-28

    In the density-functional studies of materials with localized electronic states, the local/semilocal exchange-correlation functionals are often either combined with a Hubbard parameter U as in the LDA+U method or mixed with a fraction of exactly computed (Fock) exchange energy yielding a hybrid functional. Although some inaccuracies of the semilocal density approximations are thus fixed to a certain extent, the improvements are not sufficient to make the predictions agree with the experimental data. Here, we put forward the perspective that the hybrid functional scheme and the LDA+U method should be treated as complementary, and propose to combine the range-separated Heyd-Scuseria-Ernzerhof (HSE) hybrid functional with the Hubbard U. We thus present a variety of HSE+U calculations for a set of II-VI semiconductors, consisting of zinc and cadmium monochalcogenides, along with comparison to the experimental data. Our findings imply that an optimal value U{sup *} of the Hubbard parameter could be determined, which ensures that the HSE+U{sup *} calculation reproduces the experimental band gap. It is shown that an improved description not only of the electronic structure but also of the crystal structure and energetics is obtained by adding the U{sup *} term to the HSE functional, proving the utility of HSE+U{sup *} approach in modeling semiconductors with localized electronic states.

  14. Trends in oxygen reduction and methanol activation on transition metal chalcogenides

    DEFF Research Database (Denmark)

    Tritsaris, Georgios; Nørskov, Jens Kehlet; Rossmeisl, Jan

    2011-01-01

    We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability of...

  15. Solution-Processing of Chalcogenide Nanoparticles and Thin Films for Photovoltaic Applications

    OpenAIRE

    Carreté, Àlex

    2015-01-01

    Tesi realitzada a l'Instut de Recerca en Energia de Catalunya – IREC Thin film solar cells based on direct band gap semiconductors have attracted much research during last decades. Thin film technologies are currently commercial and display record power conversion efficiencies up to 20% at the laboratory scale. However, typical direct band gap semiconductors, CdTe and CuIn1-xGaxS2 (CIGS), content scarce and/or toxic elements such as In, Ga or Cd. An alternative to these materials is Cu2ZnS...

  16. Linear and nonlinear properties of chalcogenide glasses in the terahertz frequency

    DEFF Research Database (Denmark)

    Zalkovskij, Maksim; Malureanu, Radu; Popescu, A.;

    2014-01-01

    used a standard THz-TDS setup based on photoconductive switches while in the higher frequency domain we used an air biased coherent detection (ABCD) setup. This allowed for a wide frequency range (from 0.2 to 18 THz) investigation of the refractive index of the glasses. The nonlinear coefficient...

  17. Synthesis of cadmium chalcogenide based quantum dots for enhanced multiple exciton generation

    OpenAIRE

    Page, Robert Christopher

    2014-01-01

    Quantum dots (QDs) have the potential to produce more than one exciton per incident photon, if the photon energy is greater than twice the band gap energy. This process of multiple exciton generation (MEG) has the potential to lead to a step change in the efficiency of solar panels, by utilising energy commonly wasted as heat in conventional solar cells. A wide range of CdSe/CdTe and CdTe/CdSe quantum dots with and without a CdS shell were synthesised with varying core sizes and shell thickne...

  18. Design and fabrication of resonant nanoantennas on chalcogenide glasses for nonlinear photonic applications

    OpenAIRE

    DUMAN, Hüseyin

    2013-01-01

    Ankara : Materials Science and Nanotechnology Program and the Graduate School of Engineering and Science of Bilkent Univ., 2013. Thesis (Master's) -- Bilkent University, 2013. Includes bibliographical references leaves 84-89. Duman, Hüseyin Master's

  19. Phase transition enhanced thermoelectric figure-of-merit in copper chalcogenides

    Directory of Open Access Journals (Sweden)

    David R. Brown

    2013-11-01

    Full Text Available While thermoelectric materials can be used for solid state cooling, waste heat recovery, and solar electricity generation, low values of the thermoelectric figure of merit, zT, have led to an efficiency too low for widespread use. Thermoelectric effects are characterized by the Seebeck coefficient or thermopower, which is related to the entropy associated with charge transport. For example, coupling spin entropy with the presence of charge carriers has enabled the enhancement of zT in cobalt oxides. We demonstrate that the coupling of a continuous phase transition to carrier transport in Cu2Se over a broad (360–410 K temperature range results in a dramatic peak in thermopower, an increase in phonon and electron scattering, and a corresponding doubling of zT (to 0.7 at 406 K, and a similar but larger increase over a wider temperature range in the zT of Cu1.97Ag.03Se (almost 1.0 at 400 K. The use of structural entropy for enhanced thermopower could lead to new engineering approaches for thermoelectric materials with high zT and new green applications for thermoelectrics.

  20. Phase transition enhanced thermoelectric figure-of-merit in copper chalcogenides

    Science.gov (United States)

    Brown, David R.; Day, Tristan; Borup, Kasper A.; Christensen, Sebastian; Iversen, Bo B.; Snyder, G. Jeffrey

    2013-11-01

    While thermoelectric materials can be used for solid state cooling, waste heat recovery, and solar electricity generation, low values of the thermoelectric figure of merit, zT, have led to an efficiency too low for widespread use. Thermoelectric effects are characterized by the Seebeck coefficient or thermopower, which is related to the entropy associated with charge transport. For example, coupling spin entropy with the presence of charge carriers has enabled the enhancement of zT in cobalt oxides. We demonstrate that the coupling of a continuous phase transition to carrier transport in Cu2Se over a broad (360-410 K) temperature range results in a dramatic peak in thermopower, an increase in phonon and electron scattering, and a corresponding doubling of zT (to 0.7 at 406 K), and a similar but larger increase over a wider temperature range in the zT of Cu1.97Ag.03Se (almost 1.0 at 400 K). The use of structural entropy for enhanced thermopower could lead to new engineering approaches for thermoelectric materials with high zT and new green applications for thermoelectrics.

  1. Ternary chalcogenide micro-pseudocapacitors for on-chip energy storage

    KAUST Repository

    Kurra, Narendra

    2015-05-11

    We report the successful fabrication of a micro-pseudocapacitor based on ternary nickel cobalt sulfide for the first time, with performance substantially exceeding that of previously reported micro-pseudocapacitors based on binary sulfides. CoNi2S4 micro-pseudocapacitor exhibits a maximum energy density of 18.7 mWh/cm3 at a power density of 1163 mW/cm3, opens up an avenue for exploring new family of ternary oxides/sulfides based micro-pseudocapacitors.

  2. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    KAUST Repository

    Mejia, Israel I.

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  3. High-pressure studies on Tc and crystal structure of iron chalcogenide superconductors

    Directory of Open Access Journals (Sweden)

    Hiroki Takahashi, Takahiro Tomita, Hiroyuki Takahashi, Yoshikazu Mizuguchi, Yoshihiko Takano, Satoshi Nakano, Kazuyuki Matsubayashi and Yoshiya Uwatoko

    2012-01-01

    Full Text Available The superconducting transition temperature, Tc, in iron-based solids can be enhanced by applied pressure: Tc increases from 8 to 37 K for the 11-type FeSe when the pressure is raised from 0 to 4 GPa. High-pressure studies can elucidate the mechanism of superconductivity in such novel materials. In this paper, we present a high-pressure study of Fe(Se1−xTex and Fe(Se1−xSx. In the case of Fe(Se1−xTex, the maximum Tc under high pressure did not exceed the Tc of FeSe, which can be attributed to the structural transition to the monoclinic phase. For Fe(Se1−xSx (0 < x < 0.3, Tc exhibited a significant increase with pressure; however, the maximum Tc under high pressure did not exceed the Tc of FeSe. This may be due to the disorder induced by substituting S for Se, which is similar to the pressure effect on Tc for the 1111-type superconductor Ca(Fe1−xCoxAsF. The Tc of Fe(Se1−xSx showed a complex behavior below 1 GPa, first decreasing and then increasing with increasing pressure. From high-pressure x-ray diffraction measurements, the Tc (P curve was correlated with the local structural parameter.

  4. Engineering of refractive index in sulfide chalcogenide glass by direct laser writing

    KAUST Repository

    Zhang, Yaping

    2010-01-01

    Arsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.

  5. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive annealing for performance enhancement up to 2.0% solar cell conversion efficiency. Chemical treatment using metal salt solutions and Na2Se4 for Na and Se incorporation provided efficiencies up to 1.1%.

  6. Chalcogenide microsphere fabricated from fibre taper-drawn using resistive heating

    OpenAIRE

    Wang, Pengfei; Brambilla, G; Murugan, G.S.; Semenova, Y.; Q. Wu; J. S. Wilkinson; Farrell, G.

    2011-01-01

    Over the last decade extreme interest for microsphere resonators has increased rapidly due to their very high quality Q factors, the ease with which they can be manufactured and their versatility in terms of materials and dopants for plenty of passive and active devices. Furthermore, microsphere resonators have the potential to add significant functionality to planar lightwave circuits when coupled to waveguides where they can provide wavelength filtering, delay and low-power switching, and l...

  7. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  8. Dielectric behavior of a-Sn-Se-Pb-Ge chalcogenide glass

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Prashant, E-mail: prashantshrm5@gmail.com; Modgil, Vivek; Choudhary, Shobhana; Nidhi, A. V.; Rangra, V. S. [Department of Physics, Himachal Pradesh University, Summerhill Shimla 171005 (India)

    2015-05-15

    The bulk material Sn{sub 8}Se{sub 74}Pb{sub 18-x}Ge{sub x}(7≤x≤11) has been prepared by melt quenching technique. The viterous and glassy nature have been confirmed by X-Ray Diffraction (XRD) and Differential Scanning Calorimetery (DSC) techniques respectively. The material exhibits the good thermal stability and high value of glass transition temperature. The dielectric behavior has been studied in frequency range 50Hz-1MHz, using pallet method. The universal dielectric behaviour of amorphous semiconductors has been observed for the glass system. The compositional dependence of dielectric behavior has also been observed.

  9. Fermi Level Pinning at the Interface of Molybdenum Based Chalcogenides and Metals

    Science.gov (United States)

    Moon, Inyong; Kim, Changsik; Nam, Seunggeol; Cho, Yeonchoo; Shin, Hyeon-Jin; Park, Seongjun; Yoo, Won Jong

    MoS2 and MoTe2 as the layered two dimensional materials have a sizable band gap suitable for future semiconductor application. However, their Schottky/ohmic contact engineering is found difficult to perform when varying contact metals due to Fermi level pinning at their metal interface. In this work, we investigate Schottky barrier heights at the interfaces formed between mono- or bi-layer MoS2, MoTe2 and Ti, Cr, Au, Pd. By varying temperature in the range from 200 to 500 K, we obtained their current - voltage and hysteresis characteristics so as to determine accurate Schottky barrier heights. It is found that the Pd contact with MoS2 and MoTe2 shows the most pronounced Fermi level pinning; -0.8 and -1.2 eV respectively. Furthermore, the pinned energy level is found to be located near the conduction band edge for MoS2 whereas it is near the intrinsic level for MoTe2. These results are found to be crucial to understand the Fermi level pinning mechanism of two dimensional materials, which can be used for developing future MoS2 and MoTe2 based transistor devices.

  10. Optical properties change in Te diffused As50Se50 chalcogenide thin film

    Science.gov (United States)

    Naik, Ramakanta; Behera, M.; Panda, R.; Mishra, N. C.

    2016-05-01

    In the present report, we present the effect of Te diffusion into As50Se50 thin film which changes the optical properties. The Te/As50Se50 film was irradiated by a laser beam of 532 nm to study the diffusion mechanism due to photo induced effect. The As50Se50, Te/As50Se50 films show a completely amorphous nature from X-ray diffraction study. A non direct transition was found for these films on the basis of optical transmission data carried out by Fourier Transform infrared Spectroscopy. The optical bandgap is found to be decreased with Te deposition and photo darkening phenomena is observed for the diffused film. The change in the optical constants are well supported by the corresponding change in different types of bonds which are being studied by X-ray photoelectron spectroscopy.

  11. Nickel: The time-reversal symmetry conserving partner of iron on a chalcogenide topological insulator

    Science.gov (United States)

    Vondráček, M.; Cornils, L.; Minár, J.; Warmuth, J.; Michiardi, M.; Piamonteze, C.; Barreto, L.; Miwa, J. A.; Bianchi, M.; Hofmann, Ph.; Zhou, L.; Kamlapure, A.; Khajetoorians, A. A.; Wiesendanger, R.; Mi, J.-L.; Iversen, B.-B.; Mankovsky, S.; Borek, St.; Ebert, H.; Schüler, M.; Wehling, T.; Wiebe, J.; Honolka, J.

    2016-10-01

    We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect is noted as a missing x-ray magnetic circular dichroism for resonant L3 ,2 transitions into partially filled Ni 3 d states of theory-derived occupancy nd=9.2 . On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations, we are able to relate the element specific moment formation to a local Stoner criterion. Our theory shows that while Fe adatoms form large spin moments of ms=2.54 μB with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, nonmagnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study the off-on effects of time-reversal symmetry breaking on topological surface states.

  12. First-principles study of structural, elastic and high-pressure properties of cerium chalcogenides

    International Nuclear Information System (INIS)

    A theoretical study of structural, elastic and high-pressure properties of cubic CeS, CeSe and CeTe is presented, using the full-potential augmented plane wave method plus local orbitals (FP-APW+lo) as implanted in the WIEN2K code. In this approach, the generalized gradient approximation (GGA) is used for the exchange-correlation (XC) potential. Results are given for lattice constant, bulk modulus, its pressure derivative and elastic constants for both NaCl- and CsCl-type structures. The pressure transition at which these compounds undergo structural phase transition from NaCl-B1 to CsCl-B2 phases are also calculated

  13. Electronic structure calculations of europium chalcogenides EuS and EuSe

    International Nuclear Information System (INIS)

    We have performed ab-initio self-consistent calculations on the full-potential linear muffin-tin orbital method with the local-density approximation and local spin-density approximation to investigate the structural and electronic properties of EuS and EuSe in its stable (NaCl-B1) and high-pressure phases. The magnetic phase stability was determined from the total energy calculations for both the nonmagnetic (NM) and magnetic (M) phases. These theoretical calculations clearly indicate that both at ambient and high pressures, the magnetic phase is more stable than the nonmagnetic phase. The transition pressure at which these compounds undergo the structural phase transition from NaCl-B1 to CsCl-B2 phase is calculated. The elastic constants at equilibrium in both NaCl-B1 and CsCl-B2 structures are also determined. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Analyses of structure and spectroscopic property in amorphous oxides and chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Iwadate, Yasuhiko; Hattori, Takeo; Nishiyama, Shin; Fukushima, Kazuko; Yokota, Hideki [Chiba Univ. (Japan). Faculty of Engineering; Noda, Kenji; Nakazawa, Tetsuya

    1998-01-01

    Li{sub 2}O-TeO{sub 2} glasses studied in the present work are known to possess high densities, refractive indexes, dielectric constants, and transmittance against the lights at infrared wavelength region. In spite of their usefulness, there exists little work on the short range structure of Li{sub 2}O-TeO{sub 2} glasses analyzed by not spectroscopy but diffraction experiments. The structure of Li{sub 2}O(15mol%)-TeO{sub 2}(85mol%) and Li{sub 2}O(25mol%)-TeO{sub 2}(75mol%) glasses was analysed by X-ray diffraction in which an interpretation of the radial distribution function was discussed on the basis of the correlation method. (author)

  15. Crystal architecture of R(2)SnS(5) (R = Pr, Nd, Gd and Tb): crystal structure relationships in chalcogenides.

    Science.gov (United States)

    Daszkiewicz, Marek; Gulay, Lubomir D; Shemet, Vasylyna Ya

    2008-04-01

    The crystal structure of the R(2)SnS(5) (R = Pr, Nd, Gd and Tb) compounds has been investigated using X-ray single-crystal diffraction. Crystal architecture and structural relationships among U(3)S(5), Y(2)HfS(5), R(2)SnS(5) compounds are discussed and a structural origin is determined. It is shown that the complex architecture of the crystal structure of Eu(5)Sn(3)S(12) is a result of interweaving of the simple crystal structures. The location of the copper ions in the non-stoichiometric compound Y(2)Cu(0.20)Sn(0.95)S(5) is proposed on the basis of comparative analysis of the R-S interatomic distances in the R(2)SnS(5) series of compounds. PMID:18369288

  16. Uniform deposition of ternary chalcogenide nanoparticles onto mesoporous TiO2 film using liquid carbon dioxide-based coating

    International Nuclear Information System (INIS)

    We report the simultaneous deposition of two different metal precursors dissolved in liquid carbon dioxide (l-CO2), aiming to the synthesis of ternary chalcopyrite (e.g. CuInS2) nanoparticles on a mesoporous TiO2 film. The l-CO2-based deposition of Cu and In precursors and subsequent reaction with a dilute H2S gas resulted in CuxInySz nanoparticles uniformly deposited across the entire thickness of a mesoporous TiO2 film. Further heat treatment (air annealing and sulfurization) led to the formation of more stoichiometric CuInS2 nanoparticles. The formation of CuInS2 on TiO2 was confirmed by scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. The crystal growth of CuInS2 was also found to be controllable by adjusting the number of coating cycles of the l-CO2-based deposition. - Highlights: • Simultaneous deposition of two different metal precursors dissolved in l-CO2. • Uniform deposition of CuInS2 nanoparticles across mesoporous TiO2 film. • Highly crystalline CuInS2 formed on mesoporous TiO2 film. • Nearly stoichiometric ratio of Cu:In:S was obtained

  17. Mid-infrared supercontinuum generation in concatenated fluoride and chalcogenide glass fibers covering more than three octaves

    DEFF Research Database (Denmark)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech;

    2014-01-01

    Supercontinuum is generated in concatenated ZBLAN and As2Se3 fibers. Initially, a 0.9-4.1mm supercontinuum is obtained by pumping the ZBLAN fiber with a Tm laser, which then continues to broaden to 0.9-9um in As2Se3 fiber...

  18. Study of Super-Resolution Read-Only-Memory Disk with a Semiconducting or Chalcogenide Mask Layer

    Science.gov (United States)

    Pilard, Gael; Féry, Christophe; Pacearescu, Larisa; Hoelzemann, Herbert; Knappmann, Stephan

    2009-03-01

    Super-resolution read-only-memory (ROM) disks were manufactured with a semiconductor material (InSb) or a phase change material (AgInSbTe, AIST). A reasonable carrier-to-noise ratio (CNR) of 40 dBm was measured on a single-tone pattern with 80 nm pits for both materials. On a random pattern with RLL(1,9) (RLL: run-length limited) encoding and a channel bit length of 40 nm, a bit error rate (bER) of 10-3 was found for the InSb-based disk. However, the pattern was impossible to be decoded for the AIST-based disk. This is due to the unexpected reflectivity modulation that occurs when 2T marks are read out.

  19. Electrical and optical investigations in Te–Ge–Ag and Te–Ge–AgI chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Cui, S. [Glass and Ceramic Laboratory, Institute of Chemical Sciences of Rennes, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes cedex (France); Department of Materials Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Le Coq, D., E-mail: david.lecoq@univ-rennes1.fr [Glass and Ceramic Laboratory, Institute of Chemical Sciences of Rennes, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes cedex (France); Boussard-Plédel, C.; Bureau, B. [Glass and Ceramic Laboratory, Institute of Chemical Sciences of Rennes, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes cedex (France)

    2015-08-05

    Highlights: • Evolution of the electrical conductivities in Ag and AgI-GeTe{sub 4} glasses. • We demonstrate a change of a conductivity type (electronic vs ionic) in AgI–GeTe{sub 4} glasses. • A structural model for Ag and AgI–GeTe{sub 4} glasses is proposed. • The role of Ag in the structure of the Ag and AgI–GeTe{sub 4} glasses is described. - Abstract: (GeTe{sub 4}){sub 100−x}Ag{sub x} and (GeTe{sub 4}){sub 100−x}(AgI){sub x} glasses were prepared by a melting-quenching method. The glass electrical conductivity was investigated by both electrochemical impedance spectroscopy at different temperatures from 283 K to 333 K and four-probe method at room temperature (293 K). Meanwhile, as a major factor determining the electrical conductivity of a solid, optical band gap was also studied. By comparing the electrical conductivity values and glass optical band gap evolution, it was found that (GeTe{sub 4}){sub 100−x}Ag{sub x} glasses are mainly electronic conductive. On the other hand, the electrical conductivities of (GeTe{sub 4}){sub 100−x}(AgI){sub x} glasses firstly show a monotonic decrease by increasing AgI up to 15 mol.%, and then an increase when the AgI content is higher than 15 mol.%. The activation energy E{sub a} and the pre-exponential factor σ{sub 0} show apparent turning point when AgI content is 15 mol.%, signifying a conductivity mechanism change. In this paper, correlations between the conductivity and hypothetical structures in (GeTe{sub 4}){sub 100−x}Ag{sub x} and (GeTe{sub 4}){sub 100−x}(AgI){sub x} glasses are done and the importance of the Ag role is underlined.

  20. Calculation of the lattice dynamics and Raman spectra of copper zinc tin chalcogenides and comparison to experiments

    Science.gov (United States)

    Khare, Ankur; Himmetoglu, Burak; Johnson, Melissa; Norris, David J.; Cococcioni, Matteo; Aydil, Eray S.

    2012-04-01

    The electronic structure, lattice dynamics, and Raman spectra of the kesterite, stannite, and pre-mixed Cu-Au (PMCA) structures of Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) were calculated using density functional theory (DFT). Differences in longitudinal and transverse optical (LO-TO) splitting in kesterite, stannite, and PMCA structures can be used to differentiate them. The Γ-point phonon frequencies, which give rise to Raman scattering, exhibit small but measurable shifts, for these three structures. Experimentally measured Raman scattering from CZTS and CZTSe thin films were examined in light of DFT calculations and deconvoluted to explain subtle shifts and asymmetric line shapes often observed in CZTS and CZTSe Raman spectra. Raman spectroscopy in conjunction with ab initio calculations can be used to differentiate between kesterite, stannite, and PMCA structures of CZTS and CZTSe.

  1. Effects of stoichiometry and substitution in quasi-one-dimensional iron chalcogenide BaFe2S3

    Science.gov (United States)

    Hirata, Yasuyuki; Maki, Sachiko; Yamaura, Jun-ichi; Yamauchi, Touru; Ohgushi, Kenya

    2015-11-01

    The effects of off-stoichiometry and elemental substitution on electronic properties of iron-based ladder compound BaFe2S3 are investigated. Resistivity and magnetization are revealed to be quite sensitive to the stoichiometry of Fe atoms, and 10% deficiency at Fe sites reduces the antiferromagnetic transition temperature by 40 K. The antiferromagnetic transition temperature decreases even faster and collapses to zero with hole doping through 10% K substitution at the Ba site, while the antiferromagnetic ordering phase remains with electron doping through 20% Co substitution at the Fe site. Such electron-hole asymmetry is opposite to two-dimensional iron-based superconductors, and can be explained on the basis of both itinerant and localized electronic pictures.

  2. Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goodman, Samuel M.; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Noh, Hyunwoo [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Cha, Jennifer N. [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); BioFrontiers Institute, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

    2015-02-23

    Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

  3. Fabrication of ultrafast laser written low-loss waveguides in flexible As₂S₃ chalcogenide glass tape.

    Science.gov (United States)

    Lapointe, Jerome; Ledemi, Yannick; Loranger, Sébastien; Iezzi, Victor Lambin; Soares de Lima Filho, Elton; Parent, Francois; Morency, Steeve; Messaddeq, Younes; Kashyap, Raman

    2016-01-15

    As2S3 glass has a unique combination of optical properties, such as wide transparency in the infrared region and a high nonlinear coefficient. Recently, intense research has been conducted to improve photonic devices using thin materials. In this Letter, highly uniform rectangular single-index and 2 dB/m loss step-index optical tapes have been drawn by the crucible technique. Low-loss (reflectometry has been used to study the origin of the optical losses. A detailed study of the laser writing process in thin glass is also presented to facilitate a repeatable waveguide inscription recipe. PMID:26766674

  4. On the atomistic origin of radiation-structural relaxation in chalcogenide glasses: the results of positron annihilation study

    International Nuclear Information System (INIS)

    Instability effects caused by high-energy γ-irradiation are studied in (As2S3)1-x(Sb2S3)xglasses (x=0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy, the results being treated within two-state trapping model in both normal and high-measurement statistics. The observed decrease in positron trapping rate of the glasses tested just after γ-irradiation was explained due to renovation of destroyed covalent chemical bonds. This process was governed by monomolecular single-exponential relaxation kinetics agreed well with corresponding changes in the fundamental optical absorption edge. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Atomic- and void-species nanostructures in chalcogenide glasses modified by high-energy γ-irradiation

    International Nuclear Information System (INIS)

    Atomic- and void-species nanostructures are studied in As2S3 glass in unmodified and γ-modified states using a combination of conventional X-ray diffraction with respect to the first sharp diffraction peak, synchrotron-based high-energy X-ray diffraction and extended X-ray absorption fine structure spectroscopy. The experimental data are analyzed taking into account radiation-induced changes in the parameters of the first sharp diffraction peak (position, full width at half maximum, intensity), packing factor, structural disordering, atomic and void topology, coordination number and mean square deviation in bond length. The origin of the structural modification effect induced by γ-irradiation is explained in terms of coordination topological defects model. (authors)

  6. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Arnou, Panagiota; van Hest, Maikel F. A. M.; Cooper, Carl S.; Malkov, Andrei V.; Walls, John M.; Bowers, Jake W.

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  7. Kinetics of Amorphous-Crystalline Transformation of Some Se-Te-In Chalcogenide Glasses Using Gao and Wang Model

    Directory of Open Access Journals (Sweden)

    Balbir Singh Patial

    2013-05-01

    Full Text Available The present study reports the assessment of activation energy for crystallization and crystallization reaction order (Avrami exponent n for the amorphous-crystallization transformation process of Se85 − xTe15Inx (x  2, 6 and 10 amorphous alloys using differential scanning calorimetry (DSC technique under non-isothermal conditions at four different heating rates (5, 10, 15 and 20 °C/min through Gao and Wang model. The introduction of In to the Se-Te system is found to bring a change in crystallization mechanisms and dimensions of growth.

  8. [FeFe]-Hydrogenase with Chalcogenide Substitutions at the H-Cluster Maintains Full H2 Evolution Activity.

    Science.gov (United States)

    Noth, Jens; Esselborn, Julian; Güldenhaupt, Jörn; Brünje, Annika; Sawyer, Anne; Apfel, Ulf-Peter; Gerwert, Klaus; Hofmann, Eckhard; Winkler, Martin; Happe, Thomas

    2016-07-11

    The [FeFe]-hydrogenase HYDA1 from Chlamydomonas reinhardtii is particularly amenable to biochemical and biophysical characterization because the H-cluster in the active site is the only inorganic cofactor present. Herein, we present the complete chemical incorporation of the H-cluster into the HYDA1-apoprotein scaffold and, furthermore, the successful replacement of sulfur in the native [4FeH ] cluster with selenium. The crystal structure of the reconstituted pre-mature HYDA1[4Fe4Se]H protein was determined, and a catalytically intact artificial H-cluster variant was generated upon in vitro maturation. Full hydrogen evolution activity as well as native-like composition and behavior of the redesigned enzyme were verified through kinetic assays, FTIR spectroscopy, and X-ray structure analysis. These findings reveal that even a bioinorganic active site with exceptional complexity can exhibit a surprising level of compositional plasticity. PMID:27214763

  9. The heat capacity of zinc and cadmium chalcogenides (ZnTe, CdSe, and CdTe)

    International Nuclear Information System (INIS)

    Heat capacity of zinc telluride, cadmium selenide and telluride are measured by the calorimetry method at 370-640 K (ZnTe) and 500-760 K (CdSe, CdTe). Analysis of literature data on heat capacity of the above-mentioned solid solutions at temperatures in excess of 298 K is carried out. On the basis of the results obtained and most dependable literature data on heat capacity of the compounds for temperature ranges of 220-1500 K (ZnTe, CdSe) and 220-1300 K (CdTe) new equations of heat capacity temperature dependence are suggested and thermodynamic functions of the compounds are calculated

  10. On the atomistic origin of radiation-structural relaxation in chalcogenide glasses: the results of positron annihilation study

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, Ya. [Ivan Franko National University of Lviv, Faculty of Electronics, Lviv (Ukraine); Institute of Materials of Scientific Research Company ' ' Carat' ' , Lviv (Ukraine); Institute of Physics, Jan Dlugosz University, Czestochowa (Poland); Ingram, A. [Institute of Physics, Mathematics and Chemistry, Opole Technical University (Poland); Filipecki, J.; Hyla, M. [Institute of Physics, Jan Dlugosz University, Czestochowa (Poland)

    2011-11-15

    Instability effects caused by high-energy {gamma}-irradiation are studied in (As{sub 2}S{sub 3}){sub 1-x}(Sb{sub 2}S{sub 3}){sub x}glasses (x=0, 0.1, 0.2 and 0.3) using positron annihilation lifetime spectroscopy, the results being treated within two-state trapping model in both normal and high-measurement statistics. The observed decrease in positron trapping rate of the glasses tested just after {gamma}-irradiation was explained due to renovation of destroyed covalent chemical bonds. This process was governed by monomolecular single-exponential relaxation kinetics agreed well with corresponding changes in the fundamental optical absorption edge. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Preparation of Low-loss Ge15Ga10Te75 chalcogenide glass for far-IR optics applications

    OpenAIRE

    Xu, Huijuan; He, Yuju; Wang, Xunsi; Nie, Qiuhua; Zhang, Peiquan; Xu, Tiefeng; Dai, Shixun; Zhang, Xianghua; Tao, Guangming

    2014-01-01

    Ge15Ga10Te75 (GGT) glass shows good transparency between 2 and 25 μm wavelengths, good chemical and thermal stability to be drawn into fiber, which appears to be a good candidate for developing far-IR fiber-optics devices, although there are strong absorption peaks caused by impurities in the glass. With the aim of decreasing the content of impurities and micro-crystal particles in prepared \\GGT\\ glass samples, a rapid heating furnace and the fast distillation method based on vapor evaporatio...

  12. Nonlinear switching in a concentric ring core chalcogenide glass optical fiber for passively mode-locking a fiber laser

    CERN Document Server

    Nazemosadat, Elham

    2014-01-01

    We propose an all-fiber mode-locking device which operates based on nonlinear switching in a novel concentric ring core fiber structure. The design is particularly attractive given the ease of fabrication and coupling to other components in a mode-locked fiber laser cavity. The nonlinear switching in this coupler is studied and the relative power transmission is obtained. The analysis shows that this nonlinear switch is practical for mode-locking fiber lasers and is forgiving to fabrication errors.

  13. Synthesis and Characterization of Earth Abundant and Nontoxic Metal Chalcogenides Produced via Aerosol Spray Pyrolysis for Photovoltaic Applications

    OpenAIRE

    Davis, Patrick John

    2013-01-01

    A novel synthesis technique for the production of copper zinc tin sulfide (CZTS) nanocrystals has been developed using aerosol spray pyrolysis. CZTS is a quaternary semiconducting material that shows promise as a replacement to common semiconductors such as CdTe and CIGS for use in photovoltaic devices. CIGS is currently being commercialized in the photovoltaic industry, but rare and expensive indium and gallium components threaten its long term viability. CZTS looks to be one of the best alt...

  14. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  15. Laser induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} chalcogenide nano colloids

    Energy Technology Data Exchange (ETDEWEB)

    Tintu, R., E-mail: tintu_tillanivas@yahoo.co.in [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India); Nampoori, V.P.N.; Radhakrishnan, P.; Thomas, Sheenu [International School of Photonics, Cochin University of Science and Technology, Cochin 689110 (India); Unnikrishnan, N.V. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India)

    2013-04-01

    We report the observation of two-photon induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} nano colloid solutions using frequency doubled Nd:YAG laser. Quadratic emission intensity dependence verifies the two photon absorption for the observed luminescence at an excitation of 532 nm. The optical band gap of the material is found to be tunable depending on the cluster size of the nano colloids. The cluster formation and the dependence of the cluster size with concentration were confirmed by the SEM analysis. Confocal imaging was done to confirm the emission from the clusters in the nano colloid solutions.

  16. Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

    Science.gov (United States)

    Goodman, Samuel M.; Noh, Hyunwoo; Singh, Vivek; Cha, Jennifer N.; Nagpal, Prashant

    2015-02-01

    Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

  17. Study of temperature and pressure dependences of electric properties of amorphous Ag-Ge-As-S chalcogenides containing carbon nanotubes

    International Nuclear Information System (INIS)

    Frequency and temperature dependences of impedance of AgGe1+xAs1-x(S+CNT)3, x = 0.4; 0.5; 0.6 were measured. There are maxima on frequency dependences of tangent of loss, which can be connected with relaxation processes inside the sample (the maximum at high frequencies) and the second maximum can be connected with processes occurring on the sample-electrode border. Activation energy of all synthesized materials was estimated to be near 0.5 eV. The relaxation of electric resistance at fixed pressures within the pressure range of 30 to 50 GPa was observed. It is established that the resistance decreases exponentially with time within this range of pressures

  18. Crystal architecture of R{sub 2}SnS{sub 5} (R=Pr, Nd, Gd and Tb): crystal structure relationships in chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Daszkiewicz, M. [Polish Academy of Sciences, Wroclaw (Poland). Inst. of Low Temperature and Structure Research; Gulay, L.D. [Volyn State Univ., Lutsk (Ukraine). Dept. of Ecology and Protection of Environment; Shemet, V.Ya. [Lutsk State Technical Univ. (Ukraine). Dept. of Chemistry

    2008-04-15

    The crystal structure of the R{sub 2}SnS{sub 5} (R=Pr, Nd, Gd and Tb) compounds has been investigated using X-ray singlecrystal diffraction. Crystal architecture and structural relationships among U{sub 3}S{sub 5}, Y{sub 2}HfS{sub 5}, R{sub 2}SnS{sub 5} compounds are discussed and a structural origin is determined. It is shown that the complex architecture of the crystal structure of Eu{sub 5}Sn{sub 3}S{sub 12} is a result of interweaving of the simple crystal structures. The location of the copper ions in the non-stoichiometric compound Y{sub 2}Cu{sub 0.20}Sn{sub 0.95}S{sub 5} is proposed on the basis of comparative analysis of the R-S interatomic distances in the R{sub 2}SnS{sub 5} series of compounds. (orig.)

  19. Understanding the effects of dopant impurities on quaternary chalcogenide system properties by investigating and modeling local vibrational modes and Raman lineshapes

    Science.gov (United States)

    Sarswat, Prashant; Free, Michael

    2014-03-01

    Cu2ZnSnSxCZTSSe) has gained attention as a p-type absorber layer due to its attractive properties such as optimum band gap, high absorption coefficient, and use of low cost elements. However, impurities in CZTSSe produce detrimental effects, which limit the device performance. Phonon dispersion in most of the semiconductors is found to be susceptible to the pairing between atoms within the lattice. Hence, a change in phonon dispersion can be used to investigate the effects of foreign impurities on such pairing. Thus a series of experiments were conducted to investigate the effect of free holes on the optical phonons of doped CZTSSe system as well as to evaluate asymmetry in the Raman lineshape. When irradiated with photons, doped CZTS possibly produces a continuum of inter-valence band electronic excitations, which can envelop the Raman-active phonon energy. Such overlap between the electronic continuum and discrete state can cause interference effects in CZTSSe. It was observed that Raman lineshape becomes more asymmetric, wider, and shifts towards lower frequency when laser power density increased. All these observations were found for Raman A mode as well as E (TO, LO) mode for doped CZTSSe samples.

  20. Predicting a new phase (T'') of two-dimensional transition metal di-chalcogenides and strain-controlled topological phase transition

    Science.gov (United States)

    Ma, Fengxian; Gao, Guoping; Jiao, Yalong; Gu, Yuantong; Bilic, Ante; Zhang, Haijun; Chen, Zhongfang; Du, Aijun

    2016-02-01

    Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T''), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T'' MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T'' phase unambiguously display similar band topologies and strain controlled topological phase transitions. Our findings greatly enrich the 2D families of transition metal dichalcogenides and offer a feasible way to control the electronic states of 2D topological insulators for the fabrication of high-speed spintronics devices.Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T''), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T'' MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T'' phase unambiguously display similar band topologies and strain controlled topological phase transitions. Our findings greatly enrich the 2D families of transition metal dichalcogenides and offer a feasible way to control the electronic states of 2D topological insulators for the fabrication of high-speed spintronics devices. Electronic supplementary information (ESI) available: Detailed computational method; structural data of T'' MoS2; DOS of the T'' MoS2 phase under different strains; orbital energy of T'' MoS2 under different strains; electronic structures for all other five MX2 in the T'' phase; edge states of T'' MoS2. See DOI: 10.1039/c5nr07715j

  1. Low Exciton-Phonon Coupling, High Charge Carrier Mobilities, and Multiexciton Properties in Two-Dimensional Lead, Silver, Cadmium, and Copper Chalcogenide Nanostructures.

    Science.gov (United States)

    Ding, Yuchen; Singh, Vivek; Goodman, Samuel M; Nagpal, Prashant

    2014-12-18

    The development of two-dimensional (2D) nanomaterials has revealed novel physical properties, like high carrier mobilities and the tunable coupling of charge carriers with phonons, which can enable wide-ranging applications in optoelectronic and thermoelectric devices. While mechanical exfoliation of graphene and some transition metal dichalcogenides (e.g., MoS2, WSe2) has enabled their fabrication as 2D semiconductors and integration into devices, lack of similar syntheses for other 2D semiconductor materials has hindered further progress. Here, we report measurements of fundamental charge carrier interactions and optoelectronic properties of 2D nanomaterials made from two-monolayers-thick PbX, CdX, Cu2X, and Ag2X (X = S, Se) using colloidal syntheses. Extremely low coupling of charge carriers with phonons (2-6-fold lower than bulk and other low-dimensional semiconductors), high carrier mobilities (0.2-1.2 cm(2) V(-1) s(-1), without dielectric screening), observation of infrared surface plasmons in ultrathin 2D semiconductor nanostructures, strong quantum-confinement, and other multiexcitonic properties (different phonon coupling and photon-to-charge collection efficiencies for band-edge and higher-energy excitons) can pave the way for efficient solution-processed devices made from these 2D nanostructured semiconductors. PMID:26273976

  2. Performance of polarisation functionals for linear and nonlinear optical properties of bulk zinc chalcogenides ZnX (X = S, Se, and Te).

    Science.gov (United States)

    Grüning, M; Attaccalite, C

    2016-08-21

    We calculated the frequency dependent macroscopic dielectric function and second-harmonic generation of cubic ZnS, ZnSe and ZnTe within time-dependent density-polarisation functional theory. The macroscopic dielectric function is calculated in a linear response framework, and second-harmonic generation in a real-time framework. The macroscopic exchange-correlation electric field that enters the time-dependent Kohn-Sham equations and accounts for long range correlation is approximated as a simple polarisation functional αP, where P is the macroscopic polarisation. Expressions for α are taken from the recent literature. The performance of the resulting approximations for the exchange-correlation electric field is analysed by comparing the theoretical spectra with experimental results and results obtained at the levels of the independent particle approximation and the random-phase approximation. For the dielectric function we also compare with state-of-the art calculations at the level of the Bethe-Salpeter equation. PMID:27101977

  3. Electric transport of a single-crystal iron chalcogenide FeSe superconductor: Evidence of symmetry-breakdown nematicity and additional ultrafast Dirac cone-like carriers

    Science.gov (United States)

    Huynh, K. K.; Tanabe, Y.; Urata, T.; Oguro, H.; Heguri, S.; Watanabe, K.; Tanigaki, K.

    2014-10-01

    An SDW antiferromagnetic (SDW-AF) low-temperature phase transition is generally observed and the AF spin fluctuations are considered to play an important role for the superconductivity pairing mechanism in FeAs superconductors. However, a similar magnetic phase transition is not observed in FeSe superconductors, which has caused considerable discussion. We report on the intrinsic electronic states of FeSe as elucidated by electric transport measurements under magnetic fields using a high quality single crystal. A mobility spectrum analysis, an ab initio method that does not make assumptions on the transport parameters in a multicarrier system, provides very important and clear evidence that another hidden order, most likely the symmetry broken from the tetragonal C4 symmetry to the C2 symmetry nematicity associated with the selective d -orbital splitting, exists in the case of superconducting FeSe other than the AF magnetic order spin fluctuations. The intrinsic low-temperature phase in FeSe is in the almost compensated semimetallic states but is additionally accompanied by Dirac cone-like ultrafast electrons ˜104cm2(VS) -1 as minority carriers.

  4. Thermally Activated Photoconduction and Alternating-Current Conduction in Se75Ge20Ag5 Chalcogenide Glass: Investigation of Meyer-Neldel Rule

    Institute of Scientific and Technical Information of China (English)

    R. S. Sharma; N. Mehta; A. Kumar

    2008-01-01

    We report on the observation of Meyer-Neldel rule in glassy Se75Ge20Ag5 alloy where △E is varied by two different methods. In the first approach, the intensity of light varies while measuring the photoconductivity in amorphous thin films of Se75Ge20Ag5 instead of changing composition of the glassy system. In the second approach, the variation of ac conductivity with temperature is found to be exponential and the activation energy is found to vary with frequency.

  5. Uniform deposition of ternary chalcogenide nanoparticles onto mesoporous TiO{sub 2} film using liquid carbon dioxide-based coating

    Energy Technology Data Exchange (ETDEWEB)

    Nursanto, Eduardus Budi [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Department of Clean Energy and Chemical Engineering, Korea University of Science and Technology,217, Gajeong-ro, Yuseong-gu, Daejeon 305–333 (Korea, Republic of); Park, Se Jin [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Jeon, Hyo Sang; Hwang, Yun Jeong [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Department of Clean Energy and Chemical Engineering, Korea University of Science and Technology,217, Gajeong-ro, Yuseong-gu, Daejeon 305–333 (Korea, Republic of); Kim, Jaehoon, E-mail: jaehoonkim@skku.edu [School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-Ro, Jangan-Gu, Suwon, GyeongGi-Do 440–746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), 2066, Seobu-Ro, Jangan-Gu, Suwon, GyeongGi-Do 440–746 (Korea, Republic of); Min, Byoung Koun, E-mail: bkmin@kist.re.kr [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Department of Clean Energy and Chemical Engineering, Korea University of Science and Technology,217, Gajeong-ro, Yuseong-gu, Daejeon 305–333 (Korea, Republic of); Green School, Korea University, 145,Anam-ro, Seongbuk-gu, Seoul 136–713 (Korea, Republic of)

    2014-08-28

    We report the simultaneous deposition of two different metal precursors dissolved in liquid carbon dioxide (l-CO{sub 2}), aiming to the synthesis of ternary chalcopyrite (e.g. CuInS{sub 2}) nanoparticles on a mesoporous TiO{sub 2} film. The l-CO{sub 2}-based deposition of Cu and In precursors and subsequent reaction with a dilute H{sub 2}S gas resulted in Cu{sub x}In{sub y}S{sub z} nanoparticles uniformly deposited across the entire thickness of a mesoporous TiO{sub 2} film. Further heat treatment (air annealing and sulfurization) led to the formation of more stoichiometric CuInS{sub 2} nanoparticles. The formation of CuInS{sub 2} on TiO{sub 2} was confirmed by scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. The crystal growth of CuInS{sub 2} was also found to be controllable by adjusting the number of coating cycles of the l-CO{sub 2}-based deposition. - Highlights: • Simultaneous deposition of two different metal precursors dissolved in l-CO{sub 2}. • Uniform deposition of CuInS{sub 2} nanoparticles across mesoporous TiO{sub 2} film. • Highly crystalline CuInS{sub 2} formed on mesoporous TiO{sub 2} film. • Nearly stoichiometric ratio of Cu:In:S was obtained.

  6. First-principles analysis of the spectroscopic limited maximum efficiency of photovoltaic absorber layers for CuAu-like chalcogenides and silicon.

    Science.gov (United States)

    Bercx, Marnik; Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-07-27

    Chalcopyrite semiconductors are of considerable interest for application as absorber layers in thin-film photovoltaic cells. When growing films of these compounds, however, they are often found to contain CuAu-like domains, a metastable phase of chalcopyrite. It has been reported that for CuInS2, the presence of the CuAu-like phase improves the short circuit current of the chalcopyrite-based photovoltaic cell. We investigate the thermodynamic stability of both phases for a selected list of I-III-VI2 materials using a first-principles density functional theory approach. For the CuIn-VI2 compounds, the difference in formation energy between the chalcopyrite and CuAu-like phase is found to be close to 2 meV per atom, indicating a high likelihood of the presence of CuAu-like domains. Next, we calculate the spectroscopic limited maximum efficiency (SLME) of the CuAu-like phase and compare the results with those of the corresponding chalcopyrite phase. We identify several candidates with a high efficiency, such as CuAu-like CuInS2, for which we obtain an SLME of 29% at a thickness of 500 nm. We observe that the SLME can have values above the Shockley-Queisser (SQ) limit, and show that this can occur because the SQ limit assumes the absorptivity to be a step function, thus overestimating the radiative recombination in the detailed balance approach. This means that it is possible to find higher theoretical efficiencies within this framework simply by calculating the J-V characteristic with an absorption spectrum. Finally, we expand our SLME analysis to indirect band gap absorbers by studying silicon, and find that the SLME quickly overestimates the reverse saturation current of indirect band gap materials, drastically lowering their calculated efficiency. PMID:27405243

  7. Formation of polished surface of Bi and Sb chalcogenides in pickling compositions K2Cr2O7–HBr

    Directory of Open Access Journals (Sweden)

    Pavlovich I. I.

    2011-12-01

    Full Text Available The polishing etchants were developed and recommendations were given as to their use for processing of semiconductor materials which are used for the manufacture of work items of thermoelectric devices.

  8. IR Li2Ga2GeS6 nanocrystallized GeS2-Ga2S3-Li2S electroconductive chalcogenide glass with good nonlinearity

    OpenAIRE

    Liu, Qiming; Zhang, Peng

    2014-01-01

    GeS2-Ga2S3-Li2S electroconductive glasses were prepared by the conventional melt-quenching method through carefully controlling the heating rate. Comparing with the reference of glass-forming region, our investigated GeS2-Ga2S3-Li2S system was extended to the cation ratio of 0–20% Li with around 40% Ga. GeS2-Ga2S3-Li2S glass-ceramics containing IR Li2Ga2GeS6 nonlinear nanocrystals were obtained by the more carefully controlled heating rate. Its optical nonlinearity was investigated by the Mak...

  9. Novel Ge-Te-I Far-Infrared-Transmitting Chalcogenide Glasses System%新型远红外Ge-Te-I硫系玻璃性能研究

    Institute of Scientific and Technical Information of China (English)

    何钰钜; 聂秋华; 孙杰; 王训四; 王国祥; 戴世勋; 沈祥; 徐铁峰

    2011-01-01

    采用传统的熔融-淬冷法制备了系列Ge20Te80-xIx(x=2,4,6,8 mol%)玻璃样品.利用X射线衍射仪、扫描电子显微镜、差热分析仪等设备系统测试了玻璃结构和物化性质,分析了卤素I对玻璃形成及稳定性的影响;利用分光光度计、红外光谱仪等研究了玻璃光谱性质,分析了I对玻璃的短波吸收及红外透过光谱的影响;利用Tauc方程计算了样品的直接和间接光学带隙.实验结果表明:I的引入,降低了Te的金属性,提高了Te基硫系玻璃的成玻能力;随着卤素I含量的增加,玻璃的密度减小,摩尔体积增大,且短波吸收截止边发生红移,光学带隙减小;I的引入提高了玻璃的热稳定性,其中玻璃组分为Ge20Te72I8样品热稳定性最好,其特征温度(△T)达到121℃;各Ge-Te-I玻璃样品均具有良好的红外透过性能,其红外透过范围为1.8~25 μm.%A novel Ge-Te-I far infrared transmitting chalcohalide glass system Ge20 Te80-x Ix ( x = 2, 4, 6, 8mol%) was prepared by traditional melt-quenching method. Structure and physicochemical properties of Te-based glass system were studied with XRD, SEM and DTA. The effect of halogen on the glass formation and thermal stability was investigated. Optical spectra of Te-based glass system were obtained by spectrophotometer and infrared spectrometer. Effect of halogen on the short-wavelength absorption cutoff edge and infrared transmitting spectra was analyzed. The Tauc equation was used to calculate the direct and indirect optical band gap. The results show that halogen can reduce Te metallic character and improve the glass-forming ability. The density decreased while the molar volume increased with the added I2 content. With the addition of I2, the short-wavelength cut-off edge of the glasses shifts to the longer wavelength (1 700 ~ 1 900 nm), the band gap decreased. The thermal stability was enhanced by the addition of halogen. A maximum AT value of 121°C was obtained for the glass composition Ge20Te72I8. These prepared Ge-Te-I glasses all have wide optical transmission window from 1. 8 to 25 fzm, which is a novel far infrared transmitting glass materials.

  10. Simultaneous measurements of thermal conductivity and diffusivity of Se80Te20–In ( = 2, 4, 6 and 10) chalcogenide glasses at room temperature

    Indian Academy of Sciences (India)

    N S Saxena; Mousa M A Imran; Kedar Singh

    2002-06-01

    Measurements of thermal conductivity and thermal diffusivity of twin pellets of Se80Te20–In ( = 2, 4, 6 and 10) glasses, prepared under a load of 5 tons were carried out at room temperature using transient plane source (TPS) technique. The measured values of both thermal conductivity and diffusivity were used to determine the specific heat per unit volume of the said materials in the composition range of investigation. Results indicated that both the values of thermal conductivity and thermal diffusivity increased with the addition of indium at the cost of tellurium whereas the specific heat remained almost constant. This compositional dependence behaviour of the thermal conductivity and diffusivity has been explained in terms of the iono-covalent type of bond which In makes with Se as it is incorporated in the Se–Te glass.

  11. Mid-infrared supercontinuum generation in tapered chalcogenide fiber for producing octave-spanning frequency comb around 3 {\\mu}m

    CERN Document Server

    Marandi, Alireza; Plotnichenko, Victor G; Dianov, Evgeny M; Vodopyanov, Konstantin L; Byer, Robert L

    2012-01-01

    We demonstrate mid-infrared (mid-IR) supercontinuum generation (SCG) with instantaneous bandwidth from 2.2 to 5 {\\mu}m at 40 dB below the peak, covering the wavelength range desirable for molecular spectroscopy and numerous other applications. The SCG occurs in a tapered As2S3 fiber prepared by in-situ tapering and is pumped by femtosecond pulses from the subharmonic of a mode-locked Er-doped fiber laser. Interference with a narrow linewidth c.w. laser verifies that the coherence properties of the near-IR frequency comb have been preserved through these cascaded nonlinear processes. With this approach stable broad mid-IR frequency combs can be derived from commercially available near-IR frequency combs without an extra stabilization mechanism.

  12. Spatial distribution of rare-earth ions and GaS4 tetrahedra in chalcogenide glasses studied via laser spectroscopy and ab initio molecular dynamics simulation

    Science.gov (United States)

    Lee, T. H.; Simdyankin, S. I.; Hegedus, J.; Heo, J.; Elliott, S. R.

    2010-03-01

    The spatial distribution of Nd3+ ions and GaS4 tetrahedral units in Nd-doped Ge-As-Ga-S glasses has been studied by laser spectroscopy and ab initio molecular dynamics (MD) simulations. A sharp increase in Nd3+ fluorescence intensities and lifetimes was observed with increasing Ga content, and attributed to the formation of tightly bound Nd3+ clusters in Ga-free glasses and the subsequent dissolution of such clusters upon Ga doping. A large modification in Nd3+ sites was also identified from low-temperature site-selective excitation spectra, suggesting preferential spatial correlations between Nd3+ and GaS4 tetrahedra even at low Ga-doping levels. MD simulations of these materials in the liquid state showed a tendency for Ga cluster formation as well as spatial correlations between Nd and Ga atoms consistent with the experimental results. On the basis of this result, a comprehensive structural model for Nd- and Ga-doped sulfide glasses is proposed.

  13. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    OpenAIRE

    Anuar Kassim; Ho S. Min; Tan W. Tee; Ngai C. Fei

    2011-01-01

    Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complex...

  14. Thermoelectric, band structure, chemical bonding and dispersion of optical constants of new metal chalcogenides Ba{sub 4}CuGa{sub 5}Q{sub 12} (Q=S, Se)

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A.H. [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Azam, Sikander, E-mail: sikander.physicst@gmail.com [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic)

    2014-08-01

    The electronic structure and dispersion of optical constants of the Ba{sub 4}CuGa{sub 5}S{sub 12} and Ba{sub 4}CuGa{sub 5}Se{sub 12} compounds were calculated by the first-principles full-potential linearized augmented plane wave (FPLAPW) method. We employed the local density approximation (LDA), generalized gradient approximation (GGA) and Engel–Vosko GGA (EVGGA) to calculate the electronic structures, Fermi surface, thermoelectric, chemical bonding and dispersion of optical constants of these compounds. By investigating the influence of replacing S by Se, it has been found that the charge density around ‘Ga’ is greater in Ba{sub 4}CuGa{sub 5}Se{sub 12} than Ba{sub 4}CuGa{sub 5}S{sub 12}. Fermi surface of Ba{sub 4}CuGa{sub 5}S{sub 12} consists of an electronic sheet only because there is no empty region while Ba{sub 4}CuGa{sub 5}Se{sub 12} contains both holes and electronic sheets because this compound contains both empty and shaded region. As we replace S by Se the heights of the peaks decreases as a results the reflectivity also decreases. It is noticed that the reflectivity is over 68% (60%) for Ba{sub 4}CuGa{sub 5}S{sub 12} (Ba{sub 4}CuGa{sub 5}Se{sub 12}) compounds within the energy range studied. This implies that the material will serve as a good reflector. By replacing S by Se the figure of merit values increases from 0.97 to 1.0, which shows the good thermoelectric behavior of both compounds. - Highlights: • DFT-FPLAPW method used for calculating the properties. • For predicting the chemical bonding the charge density behavior is studied in 2D. • The optical properties were also calculated and analyzed. • The Fermi surface is composed of two bands crossing along the EF level. • The thermoelectric properties have also been calculated.

  15. Trigonal-bipyramidal and square-pyramidal chromium-manganese chalcogenide clusters, [E2CrMn2(CO)n](2-) (E=S, Se, Te; n=9, 10): synthesis, electrochemistry, UV/Vis absorption, and computational studies.

    Science.gov (United States)

    Shieh, Minghuey; Yu, Chun-Hsien; Chu, Yen-Yi; Guo, Yu-Wen; Huang, Chung-Yi; Hsing, Kai-Jieah; Chen, Pei-Chi; Lee, Chung-Feng

    2013-05-01

    The reactions of E powder (E=S, Se) with a mixture of Cr(CO)6 and Mn2(CO)10 in concentrated solutions of KOH/MeOH produced two new mixed Cr-Mn-carbonyl clusters, [E2CrMn2(CO)9](2-) (E=S, 1; Se, 2). Clusters 1 and 2 were isostructural with one another and each displayed a trigonal-bipyramidal structure, with the CrMn2 triangle axially capped by two μ3-E atoms. The analogous telluride cluster, [Te2CrMn2(CO)9](2-) (3), was obtained from the ring-closure of Te2Mn2 ring complex [Te2Mn2Cr2(CO)18](2-) (4). Upon bubbling with CO, clusters 2 and 3 were readily converted into square-pyramidal clusters, [E2CrMn2(CO)10](2-) (E=Se, 5; Te, 6), accompanied with the cleavage of one Cr-Mn bond. According to SQUID analysis, cluster 6 was paramagnetic, with S=1 at room temperature; however, the Se analogue (5) was spectroscopically proposed to be diamagnetic, as verified by TD-DFT calculations. Cluster 6 could be further carbonylated, with cleavage of the Mn-Mn bond to produce a new arachno-cluster, [Te2CrMn2(CO)11](2-) (7). The formation and structural isomers, as well as electrochemistry and UV/Vis absorption, of these clusters were also elucidated by DFT calculations. PMID:23610078

  16. Synthesis and characterization of new N-(diphenylphosphino)-naphthylamine chalcogenides: X-ray structures of (1-NHC 10H 7)P(Se)Ph 2 and Ph 2P(S)OP(S)Ph 2

    KAUST Repository

    Tomah Al-Masri, Harbi

    2012-09-01

    The reaction of 1-naphthylamine with one equivalent of chlorodiphenylphosphine in the presence of triethylamine gave the (1-NHC 10H 7)PPh 2 (1) ligand. Refluxing of 1 with elemental sulfur or grey selenium in toluene (1:1 molar ratio) afforded (1-NHC 10H 7)P(S)Ph 2 (2) and (1-NHC 10H 7)P(Se)Ph 2 (3), respectively. Moreover, the byproduct {Ph 2P(S)} 2O (4) was isolated from the reaction of 1 with elemental sulfur. Compounds 1-3 were identified and characterized by multinuclear ( 1H, 13C, 31P, 77Se) NMR spectroscopy, mass spectrometry, and elemental analysis. Crystal structure determinations of 3 and 4 were carried out. Copyright © 2012 Taylor and Francis Group, LLC.

  17. Investigation of conduction and dielectric behaviors of a-Pb{sub 9}Se{sub 71}Ge{sub 20−x}Sn{sub x} (8≤x≤12) chalcogenide glass

    Energy Technology Data Exchange (ETDEWEB)

    Modgil, Vivek, E-mail: vivekmodgilphysics.hpu@gmail.com; Rangra, V.S.

    2014-07-15

    The Pb{sub 9}Se{sub 71}Ge{sub 20−x}Sn{sub x} (8≤x≤12) glassy alloys are prepared by melt quenching technique. The dielectric parameters and conductivity behavior of pallets has been studied in the frequency range 500 Hz to 1 MHz with varying temperature well below glass transition temperature. The ac conductivity is found to obey the power law ω{sup s}, where s approaches unity at room temperature and decreases as temperature rises. The conductivity behavior, dielectric constant and loss show the frequency and temperature dependence. The results obtained are discussed in terms of correlated barrier hopping model proposed by Elliot. Correlation between conductive and dielectric behavior of glassy alloy has been observed.

  18. Two new ternary chalcogenides Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) with chains of ZnQ{sub 4} tetrahedra. Syntheses, crystal structure, and optical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai; Beard, Jessica; Malliakas, Christos D.; Ibers, James A. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Mesbah, Adel [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; ICSM, UMR 5257 CEA/CNRS/UM2/ENSCM, Bagnols-sur-Ceze (France); Rocca, Dario; Lebegue, Sebastien [Univ. de Lorraine, Vandoeuvre-les-Nancy (France). Lab. de Cristallographie, Resonance Magnetique et Modelisations (CRM2, UMR CNRS 7036)

    2016-08-01

    Single crystals of Ba{sub 2}ZnQ{sub 3} (Q = Se, Te) were obtained by solid-state reactions at 1173 K. These isostructural compounds crystallize in the K{sub 2}AgI{sub 3} structure type. The Zn atoms in this structure are coordinated to four Q atoms (2 Q1, 1 Q2, 1 Q3) and these form a distorted tetrahedron around each Zn atom. Each ZnQ{sub 4} tetrahedron shares two corners with neighboring ZnQ{sub 4} tetrahedra resulting in the formation of infinite chains of [ZnQ{sub 4}{sup 4-}] units. The absorption spectrum of a single crystal of Ba{sub 2}ZnTe{sub 3} shows an absorption edge at 2.10(2) eV, consistent with the dark-red color of the crystals. From DFT calculations Ba{sub 2}ZnSe{sub 3} and Ba{sub 2}ZnTe{sub 3} are found to be semiconductors with electronic band gaps of 2.6 and 1.9 eV, respectively.

  19. Design of Refractive-Diffractive Night Vision System Based on Chalcogenide Glass%基于硫系玻璃的汽车夜视折衍光学系统

    Institute of Scientific and Technical Information of China (English)

    芦雅静; 宋宝安; 徐铁峰; 戴世勋; 聂秋华; 沈祥; 林常规; 张培晴

    2013-01-01

    在夜间或雨雪、大雾天气等能见度低的情况下,利用传统的汽车照明系统,驾驶员较难看清前方的景物及行人.夜视辅助驾驶系统可以提高驾驶员夜间行车视距,减小交通事故发生概率.基于硫系玻璃的汽车夜视系统应用越来越广.分析比较了目前市场上存在的几类夜视光学系统的优缺点,设计了基于新型红外硫系玻璃和衍射光学元件的夜视系统,优化后系统的视场角为30°、焦距为15 mm、F数为1、工作温度范围为-30℃~50℃.系统包含三片材料为Ge20 Sb15Se65的透镜,仅引入一个非球面和一个衍射面.实验结果表明,在空间频率15 lp/mm处,系统的调制传递函数接近衍射极限,在-30℃~50℃温度范围内最大的焦移量为6.6 μm,远小于系统焦深20μm,成像质量良好.

  20. Solvothermal Process Assisted Sensitization of 1D Anodized TiO2 Nanotubes with 0D Cadmium Chalcogenides (CdTe, CdS) for Efficient Solar to Clean Energy Generation

    Science.gov (United States)

    Sarker, Swagotom

    The creation of an n-n heterojunction between TiO2 nanotubes (T_NT) and CdTe nanocrystals (which mostly exist as p-type) is crucial for realizing the benefits of efficient directional charge transport in a photoanode of 1D/0D architecture. The presented one-pot solvothermal approach leverages temperature control to achieve linker-free spatial distribution of CdTe nanocrystals (NCs) on T_NT resulting in highly efficient optical and photoelectrochemical responses. As a result of this positive outcome, a comparative study between the solvothermal approach and the linker mediated approach was performed on water oxidation with CdS NC decorated T_NT. Solvothermally synthesized T_NT/CdS photoelectrode presents ˜600% higher value of short-circuit current density (Isc) than that of the plain T_NT (0.95 mA/cm2); in addition, it demonstrates 4.20-fold increased applied-bias-to photoconversion efficiency (ABPE) in comparison with the lone T_NT (0.77%). However, linker mediated T_NT/MPA-CdS photoelectrode exhibits relatively lower value of I sc (2.51 mA/cm2) and ABPE (1.79 %).