Nanostructured nickel doped β-V{sub 2}O{sub 5} thin films for supercapacitor applications

Energy Technology Data Exchange (ETDEWEB)

Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S. [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India); Purushothaman, K.K. [Department of Physics, TRP Engineering College, Trichy (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India)

2013-07-15

Graphical abstract: - Highlights: • Nanorod with pores has been observed for 5 wt.% nickel doped β-V{sub 2}O{sub 5} thin films. • Film with 5 wt.% of nickel exhibits a specific capacitance of 417 F g{sup −1}. • These films exhibit high energy density. • The charge transfer resistance is 103 Ω. - Abstract: Interesting thin film electrodes of nickel doped vanadium pentoxide with different levels of doping (2.5–10 wt.%) are prepared on FTO and glass substrate at 300 °C using sol–gel spin coating method. The structural and morphological studies are made to understand the nature of the surface of the thin films. The electrochemical characteristics have been investigated through cyclic voltammetry and ac impedance spectroscopy measurements. The doping of nickel with β-V{sub 2}O{sub 5} has led to enhanced intercalation and deintercalation of ions. β-V{sub 2}O{sub 5} films with 5 wt.% of Ni exhibit the maximum specific capacitance of 417 F/g at a scan rate of 5 mV/s, with a good cyclic stability making it a promising candidate for supercapacitor application.

Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

International Nuclear Information System (INIS)

Duan Xingkai; Yang Junyou; Zhu, W; Fan, X A; Bao, S Q

2006-01-01

P-type Bi 0.5 Sb 1.5 Te 3 thin films with thicknesses in the range 80-320 nm have been deposited by the flash evaporation method on glass substrates at 473 K. XRD and field emission scanning electron microscope were performed to characterize the thin films. The results show that the thin films are polycrystalline and the grain size of the thin films increases with increasing thickness of the thin films. Compositional analysis of the thin films was also carried out by energy-dispersive x-ray analysis. A near linear relationship was observed between the electrical resistivity and the inverse thickness of the annealed thin films, and it agrees with Tellier's model. Electrical resistivity of the annealed thin films was studied in the temperature range 300-350 K, and their thermal activation behaviour was characterized, the activation energy for conduction decreases with increasing thickness of the thin films

Soft chemistry routes to transparent metal oxide thin films. The case of sol–gel synthesis and structural characterization of Ta{sub 2}O{sub 5} thin films from tantalum chloromethoxide

Energy Technology Data Exchange (ETDEWEB)

Epifani, Mauro, E-mail: mauro.epifani@le.imm.cnr.it [Istituto per la Microelettronica e i Microsistemi, IMM-CNR, Via Monteroni, 73100 Lecce (Italy); Zamani, Reza [Catalonia Institute for Energy Research, IREC c/Jardins de les Dones de Negre, 1, 08930-Sant Adria del Besos, Barcelona (Spain); Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, CAT (Spain); Arbiol, Jordi [Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, CAT (Spain); Institucio Catalana de Recerca i Estudis Avançats, ICREA, 08010, Barcelona (Spain); Fabrega, Cristian; Andreu, Teresa [Catalonia Institute for Energy Research, IREC c/Jardins de les Dones de Negre, 1, 08930-Sant Adria del Besos, Barcelona (Spain); Pace, Giovanni Battista; Siciliano, Pietro [Istituto per la Microelettronica e i Microsistemi, IMM-CNR, Via Monteroni, 73100 Lecce (Italy); Morante, Joan R. [Catalonia Institute for Energy Research, IREC c/Jardins de les Dones de Negre, 1, 08930-Sant Adria del Besos, Barcelona (Spain); M2E-IN2UB-XaRMAE, Departament d’Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona, CAT (Spain)

2014-03-31

Ta{sub 2}O{sub 5} thin films were prepared by spin-coating methanol solutions of Ta chloromethoxide. It was prepared by reacting TaCl{sub 5} with methanol, followed by water addition (H{sub 2}O: Ta molar ratio was 16). Thin films were deposited by spin-coating onto SiO{sub 2}/Si substrates, followed by drying at 90 °C and heat-treatment up to 700 °C. The films were characterized by X-ray diffraction, transmission electron microscopy and field emission scanning electron microscopy. Crystallization was obtained only after heating at 700 °C, in the Ta{sub 2}O{sub 5} orthorhombic phase. The resulting films had a thickness of 100 nm. Their structure was constituted by porous crystals with size up to 50 nm, while the pores had a size of about 10 nm. The results demonstrated that TaCl{sub 5} is very convenient precursor for the wet chemical synthesis of Ta{sub 2}O{sub 5} thin films. - Highlights: • Development of convenient solution synthesis of Ta{sub 2}O{sub 5} thin films; • The precursor chemistry was established and related to the synthesis process; • Uniform films crystallized in the most stable orthorombic Ta{sub 2}O{sub 5} phase;.

Phase transitions in Fe{sub 0.5}Co{sub 0.5} (110) thin films

Energy Technology Data Exchange (ETDEWEB)

Ramírez-Dámaso, G., E-mail: gramirezd@ipn.mx [Escuela Superior de Ingeniería y Arquitectura “Unidad Ticomán” del Instituto Politécnico Nacional, Av. Ticomán No. 600, Col. San José Ticomán, Del. G. A. M., C. P. 07330 Ciudad de México (Mexico); Castillo-Alvarado, F.L. [Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, Col. San Pedro Zacatenco, C. P. 07738 Ciudad de México (Mexico); Rojas-Hernández, E. [Escuela Superior de Ingeniería y Arquitectura “Unidad Ticomán” del Instituto Politécnico Nacional, Av. Ticomán No. 600, Col. San José Ticomán, Del. G. A. M., C. P. 07330 Ciudad de México (Mexico)

2016-12-15

In this paper, we present calculations for two second-order phase transitions in (110) Fe{sub 0.5}Co{sub 0.5} thin films with 11, 15, and 19 monoatomic layers. The lattice and magnetic transitions are based on thermodynamic equilibrium considerations of the magnetic alloy. The procedure proposed by Valenta and Sukiennicki was applied to calculate the composition x(i), the lattice order parameter t(i), and the magnetic order parameter σ(i) as a function of temperature T. We confirmed that both phase transitions, lattice and magnetic, are of the second order, in accordance with experimental results in the literature. The obtained behavior of these parameters indicates their inhomogeneity due to the boundary conditions on the surfaces of the thin film.

YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

Science.gov (United States)

Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

2017-06-01

The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process

International Nuclear Information System (INIS)

Zhang, B.; Dong, X.P.; Wu, J.S.; Xu, X.F.

2008-01-01

Tantalum-doped indium tin oxide thin films were deposited by a cosputtering technique with an ITO target and a Ta 2 O 5 target. The variations of microstructure, electrical and optical properties with substrate temperature and annealing temperature were investigated in some detail. Ta-doped ITO thin films showed better crystalline structure with different prominent plane orientation by different heating process. ITO:Ta thin films deposited at room temperature showed better optical and electrical properties. Increasing substrate temperature and reasonable annealing temperature could remarkably improve the optical and electrical properties of the films. The variation of carrier concentration had an important influence on near-IR reflection, near-UV absorption and optical bandgap. ITO:Ta thin films showed wider optical bandgap. ITO:Ta thin films under the optimum parameters had a sheet resistance of 10-20 and ohm;/sq and a transmittance of 85% with an optical bandgap of above 4.0 eV. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

2016-01-01

We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

Effects of strain on the magnetic and transport properties of the epitaxial La0.5Ca0.5MnO3 thin films

International Nuclear Information System (INIS)

Zarifi, M.; Kameli, P.; Ehsani, M.H.; Ahmadvand, H.; Salamati, H.

2016-01-01

The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La 0.5 Ca 0.5 MnO 3 (LCMO) thin films, grown on (100) SrTiO 3 (STO) and LaAlO 3 (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator–metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge–orbital order (CO–O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively. - Highlights: • Epitaxial La 0.5 Ca 0.5 MnO 3 thin films, grown on (100) SrTiO 3 and LaAlO 3 substrates. • The compressive strain leads to the increase in the magnetization of the films. • The tensile strain leads to the decrease in the magnetization of the films. • The magnetoresistance is enhanced by increasing film thickness.

d-Wave density waves in high Tc cuprates and CeCoIn5

International Nuclear Information System (INIS)

Maki, Kazumi; Dora, Balazs; Vanyolos, Andras; Virosztek, Attila

2007-01-01

Unconventional density waves (UDW) have a long history starting with the speculation of Halperin and Rice in 1968. However, a more realistic approach started around 1999 in order to clarify the nature of the pseudogap in the underdoped region of hole-doped high T c cuprates. Also d-wave density waves (dDW) evolved from early unrealistic 2D model with Z 2 symmetry to more realistic 3D mean-field condensate with U(1) gauge symmetry. More recently, the giant Nernst effect and the angle dependent magnetoresistance in LSCO, YBCO, Bi2212 and CeCoIn 5 are successfully described in terms of dDW, where the Landau quantization of the quasiparticle spectrum in dDW in a magnetic field (the Nersesyan effect) plays the crucial role

Effects of the substrate temperature on the properties of CuIn5S8 thin films

International Nuclear Information System (INIS)

Gannouni, M.; Kanzari, M.

2011-01-01

Structural, optical and electrical properties of CuIn 5 S 8 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn 5 S 8 thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10 5 cm -1 at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn 5 S 8 thin film is an n-type semiconductor at 250 deg. C.

Fabrication of Lead-Free Bi0.5Na0.5TiO3 Thin Films by Aqueous Chemical Solution Deposition

Directory of Open Access Journals (Sweden)

Mads Christensen

2017-02-01

Full Text Available Piezoelectric ceramics are widely used in actuator applications, and currently the vast majority of these devices are based on Pb ( Zr , Ti O 3 , which constitutes environmental and health hazards due to the toxicity of lead. One of the most promising lead-free material systems for actuators is based on Bi 0 . 5 Na 0 . 5 TiO 3 (BNT, and here we report on successful fabrication of BNT thin films by aqueous chemical solution deposition. The precursor solution used in the synthesis is based on bismuth citrate stabilized by ethanolamine, NaOH , and a Ti-citrate prepared from titanium tetraisopropoxide and citric acid. BNT thin films were deposited on SrTiO 3 and platinized silicon substrates by spin-coating, and the films were pyrolized and annealed by rapid thermal processing. The BNT perovskite phase formed after calcination at 500 °C in air. The deposited thin films were single phase according to X-ray diffraction, and the microstructures of the films shown by electron microscopy were homogeneous and dense. Decomposition of the gel was thoroughly investigated, and the conditions resulting in phase pure materials were identified. This new aqueous deposition route is low cost, robust, and suitable for development of BNT based thin film for actuator applications.

Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

2015-11-01

Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

Science.gov (United States)

Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

2009-11-01

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

International Nuclear Information System (INIS)

Ahn, C W; Bae, J S; Jeong, E D; Lee, S Y; Lee, H J; Ullah, A; Kim, I W; Choi, J S; Park, B H

2009-01-01

We have fabricated K 0.5 Na 0.5 NbO 3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V -1 , which is comparable to that of polycrystalline PZT thin films.

Thickness Measurement of V2O5 Nanometric Thin Films Using a Portable XRF

Directory of Open Access Journals (Sweden)

Fabio Lopes

2016-01-01

Full Text Available Nanometric thin films have always been chiefly used for decoration; however they are now being widely used as the basis of high technology. Among the various physical qualities that characterize them, the thickness strongly influences their properties. Thus, a new procedure is hereby proposed and developed for determining the thickness of V2O5 nanometric thin films deposited on the glass surface using Portable X-Ray Fluorescence (PXRF equipment and the attenuation of the radiation intensity Kα of calcium present in the glass. It is shown through the present paper that the radiation intensity of calcium Kα rays is proportional to film thickness in nanometric films of vanadium deposited on the glass surface.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Thin film processes II

CERN Document Server

Kern, Werner

1991-01-01

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Effects of strain on the magnetic and transport properties of the epitaxial La0.5Ca0.5MnO3 thin films

Science.gov (United States)

Zarifi, M.; Kameli, P.; Ehsani, M. H.; Ahmadvand, H.; Salamati, H.

2016-12-01

The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La0.5Ca0.5MnO3 (LCMO) thin films, grown on (100) SrTiO3 (STO) and LaAlO3 (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator-metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge-orbital order (CO-O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively.

Preparation of Li4Ti5O12 electrode thin films by a mist CVD process with aqueous precursor solution

Directory of Open Access Journals (Sweden)

Kiyoharu Tadanaga

2015-03-01

Full Text Available Spinel Li4Ti5O12 thin films were prepared by a mist CVD process, using an aqueous solution of lithium nitrate and a water-soluble titanium lactate complex as the source of Li and Ti, respectively. In this process, mist particles ultrasonically atomized from a source aqueous solution were transferred by nitrogen gas to a heating substrate to prepare thin films. Scanning electron microscopy observation showed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 500 nm were obtained. In the X-ray diffraction analysis, formation of Li4Ti5O12 spinel phase was confirmed in the obtained thin film sintered at 700 °C for 4 h. The cell with the thin films as an electrode exhibited a capacity of about 110 mAh g−1, and the cell showed good cycling performance during 10 cycles.

Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Effects of strain on the magnetic and transport properties of the epitaxial La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Zarifi, M. [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Kameli, P., E-mail: kameli@cc.iut.ac.ir [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Ehsani, M.H. [Department of Physics, Semnan University, Semnan 35195-363 (Iran, Islamic Republic of); Ahmadvand, H.; Salamati, H. [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

2016-12-15

The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La{sub 0.5}Ca{sub 0.5}MnO{sub 3} (LCMO) thin films, grown on (100) SrTiO{sub 3} (STO) and LaAlO{sub 3} (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator–metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge–orbital order (CO–O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively. - Highlights: • Epitaxial La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films, grown on (100) SrTiO{sub 3} and LaAlO{sub 3} substrates. • The compressive strain leads to the increase in the magnetization of the films. • The tensile strain leads to the decrease in the magnetization of the films. • The magnetoresistance is enhanced by

Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

Science.gov (United States)

Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

2016-12-01

TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

Application of V2O5 thin films deposited by laser ablation in micron batteries of solid state

International Nuclear Information System (INIS)

Escobar A, L.; Camps, E.; Haro P, E.; Camacho L, M.A.; Julien, C.

2001-01-01

The obtained results from synthesizing V 2 O 5 thin films by laser ablation are presented. Depending on the deposit conditions V 2 O 5 thin films have been grown as amorphous as a crystalline ones with preferential orientation. The results of the electrochemical characterization of one of the synthesized layers are presented when being manufactured joint with it a micron battery. (Author)

Novel chemical analysis for thin films

International Nuclear Information System (INIS)

Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

1991-01-01

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

Flux pinning enhancement in thin films of Y3 Ba5 Cu8O18.5 + d

Science.gov (United States)

Aghabagheri, S.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.

2018-06-01

YBa2Cu3O7 (Y123) and Y3Ba5Cu8O18 (Y358) thin films were deposited by pulsed laser deposition method. XRD analysis shows both films grow in c axis orientation. Resistivity versus temperature analysis shows superconducting transition temperature was about 91.2 K and 91.5 K and transition width for Y358 and Y123 films was about 0.6 K and 1.6 K, respectively. Analysis of the temperature dependence of the AC susceptibility near the transition temperature, employing Bean's critical state model, indicates that intergranular critical current density for Y358 films is more than twice of intergranular critical current density of Y123 films. Thus, flux pining is stronger in Y358 films. Weak links in the both samples is of superconductor-normal-superconductor (SNS) type irrespective of stoichiometry.

Effects of the substrate temperature on the properties of CuIn{sub 5}S{sub 8} thin films

Energy Technology Data Exchange (ETDEWEB)

Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2011-10-01

Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn{sub 5}S{sub 8} thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 5} cm{sup -1} at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 250 deg. C.

Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation method

Energy Technology Data Exchange (ETDEWEB)

Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2011-05-19

Highlights: > In this work, thin films of CuIn{sub 5}S{sub 8} were successfully deposited onto glass substrates by thermal evaporation and annealed in air. > Post-depositional annealing effects on structural, optical and electrical properties of thermal evaporated CuIn{sub 5}S{sub 8} thin films were studied. > The results reported in this work make this material attractive as an absorber material in solar cells applications. - Abstract: Stoichiometric compound of copper indium sulfur (CuIn{sub 5}S{sub 8}) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn{sub 5}S{sub 8} were deposited onto glass substrates under the pressure of 10{sup -6} Torr using thermal evaporation technique. CuIn{sub 5}S{sub 8} thin films were then thermally annealed in air from 100 to 300 deg. C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn{sub 5}S{sub 8} thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 deg. C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 4} cm{sup -1} was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 300 deg. C.

Reversible superhydrophilicity and hydrophobicity switching of V2O5 thin films deposited by magnetron sputtering

Science.gov (United States)

Zhang, Chunzi; Peng, Zhiguang; Cui, Xiaoyu; Neil, Eric; Li, Yuanshi; Kasap, Safa; Yang, Qiaoqin

2018-03-01

V2O5 thin films are well-known "smart" materials due to their reversible wettability under UV irradiation and dark storage. Their surfaces are usually hydrophobic and turn into hydrophilic under UV irradiation. However, the V2O5 thin films deposited by magnetron sputtering in present work are superhydrophilic and turned into hydrophobic after days' of storage in air. This change can be recovered by heating. The effects of many factors including surface roughness, irradiation from visible light, UV, & X-ray, and storage in air & vacuum on the reversible switching of wettability were investigated. The results show that air absorption is the main factor causing the film surface change from superhydrophilicity to hydrophobicity.

Effect of solution concentration on MEH-PPV thin films

Science.gov (United States)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

Science.gov (United States)

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo

2010-09-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S.; Nagamuthu, S. [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Li+ ions diffusion into sol-gel V2O5 thin films: electrochromic properties

Science.gov (United States)

Benmoussa, M.; Outzourhit, A.; Bennouna, A.; Ihlal, A.

2009-10-01

V{2}O{5} thin films were prepared by the sol-gel spin coating process. The Li+ ions insertion effect on optical and electrochromic properties of those films was studied. The diffusion coefficient was calculated using both cyclic voltammograms and chronoamperometric curves. The amount x of Li+ ions in LixV{2}O{5} was also calculated. Finally, the electrochromic performance evolution characteristics such as the reversibility, coloration efficiency, coloration memory stability and response time were studied.

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

Science.gov (United States)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Highly coercive thin-film nanostructures

International Nuclear Information System (INIS)

Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

2005-01-01

The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

Electrical and optical properties of spray - deposited CdSe thin films

International Nuclear Information System (INIS)

Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.

2002-01-01

The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature

Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

Science.gov (United States)

Jong, Chao-An; Gan, Jon-Yiew

2000-02-01

Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

CERN Document Server

Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

2000-01-01

Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

A comparative study: Effect of plasma on V{sub 2}O{sub 5} nanostructured thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Megha; Kumar, Prabhat; Sharma, Rabindar K., E-mail: rkrksharma6@gmail.com; Reddy, G. B. [Thin film laboratory, Department of Physics, Indian Institute of Technology Delhi, Delhi (India)

2016-05-06

Vanadium pentoxide nanostructured thin films (NSTs) have been studied to analyze the effect of plasma on nanostructures grown and morphology of films deposited using sublimation process. Nanostructured thin films were deposited on glass substrates, one in presence of oxygen plasma and other in oxygen environment (absence of plasma). Films were characterized using XRD, Raman spectroscopy, SEM and HRTEM. XRD studies revealed α-V{sub 2}O{sub 5} films (orthorhombic phase) with good crystallinity. However, film deposited in presence of plasma have higher peak intensities as compared to those deposited in absence of plasma. Raman studies also support these finding following same trends of considerable increase in intensity in case of film deposited in presence of plasma. SEM micrographs makes the difference more visible, as film deposited in plasma have well defined plate like structures whereas other film have not-clearly-defined petal-like structures. HRTEM results show orthorhombic phase with 0.39 nm interplanar spacing, as reported by XRD. Results are hereby in good agreement with each other.

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

International Nuclear Information System (INIS)

Yuan, Feifei; Shi, Zhixiang; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Hühne, Ruben; Schultz, Ludwig; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina

2015-01-01

FeSe 0.5 Te 0.5 thin films were grown by pulsed laser deposition on CaF 2 , LaAlO 3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe 0.5 Te 0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density J c (θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no J c (θ) peaks for H||c were observed in films on CaF 2 and LaAlO 3 . J c (θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg–Landau approach with appropriate anisotropy ratio γ J . The scaling parameter γ J is decreasing with decreasing temperature, which is different from what we observed in FeSe 0.5 Te 0.5 films on Fe-buffered MgO substrates. (paper)

Structural and electrical properties of Ta2O5 thin films prepared by ...

Indian Academy of Sciences (India)

The dielectric constant and leakage current density of the Ta2O5 thin films increase with increasing powers of the UV- lamps. Effects of UV- lamp powers on the structural and electrical properties were discussed. Keywords. Chemical vapour deposition processes; oxides; dielectric material; MOS capacitor. 1. Introduction.

Evolution of ground-state wave function in CeCoIn5 upon Cd or Sn doping

Science.gov (United States)

Chen, K.; Strigari, F.; Sundermann, M.; Hu, Z.; Fisk, Z.; Bauer, E. D.; Rosa, P. F. S.; Sarrao, J. L.; Thompson, J. D.; Herrero-Martin, J.; Pellegrin, E.; Betto, D.; Kummer, K.; Tanaka, A.; Wirth, S.; Severing, A.

2018-01-01

We present linear polarization-dependent soft-x-ray absorption spectroscopy data at the Ce M4 ,5 edges of Cd- and Sn-doped CeCoIn5. The 4 f ground-state wave functions have been determined for their superconducting, antiferromagnetic, and paramagnetic ground states. The absence of changes in the wave functions in CeCo (In1-xCdx) 5 suggests that the 4 f -conduction-electron (c f ) hybridization is not affected by global Cd doping, thus supporting the interpretation of magnetic droplets nucleating long-range magnetic order. This is contrasted by changes in the wave function due to Sn substitution. Increasing Sn in CeCo (In1-ySny) 5 compresses the 4 f orbitals into the tetragonal plane of these materials, suggesting enhanced c f hybridization with the in-plane In(1) atoms and a homogeneous altering of the electronic structure. As these experiments show, the 4 f wave functions are a very sensitive probe of small changes in the hybridization of 4 f and conduction electrons, even conveying information about direction dependencies.

DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

Picosecond and subpicosecond pulsed laser deposition of Pb thin films

Directory of Open Access Journals (Sweden)

F. Gontad

2013-09-01

Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

Science.gov (United States)

Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

1994-09-01

The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

Unraveling the magnetic properties of BiFe0.5Cr0.5O3 thin films

Directory of Open Access Journals (Sweden)

G. Vinai

2015-11-01

Full Text Available We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO thin films grown on (001 (110 and (111 oriented SrTiO3 (STO substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

Thermoelectric properties of V{sub 2}O{sub 5} thin films deposited by thermal evaporation

Energy Technology Data Exchange (ETDEWEB)

Santos, R.; Loureiro, J., E-mail: joa.loureiro@gmail.com; Nogueira, A.; Elangovan, E.; Pinto, J.V.; Veiga, J.P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I., E-mail: imf@fct.unl.pt

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V{sub 2}O{sub 5}) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V{sub 2}O{sub 5} phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 μV/K and electrical conductivity of 5.5 (Ω m){sup −1}. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Sputtered molybdenum thin films and the application in CIGS solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhou, D.; Zhu, H., E-mail: hongbing1982@hotmail.com; Liang, X.; Zhang, C.; Li, Z.; Xu, Y.; Chen, J.; Zhang, L.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

2016-01-30

Graphical abstract: - Highlights: • Mo thin films are prepared by magnetron sputtering. • The dynamic deposition rate increases with the increasing discharge power. • The surface structure of Mo films varies with discharge power and working pressure. • High efficiency CIGS thin film solar cell of 15.2% has been obtained. - Abstract: Molybdenum (Mo) thin films are prepared by magnetron sputtering with different discharge powers and working pressures for the application in Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells as back electrodes. Properties of these Mo thin films are systematically investigated. It is found that the dynamic deposition rate increases with the increasing discharge power while decreases with the increasing working pressure. The highest dynamic deposition rate of 15.1 nm m/min is achieved for the Mo thin film deposited at the discharge power of 1200 W and at the working pressure of 0.15 Pa. The achieved lowest resistivity of 3.7 × 10{sup −5} Ω cm is attributed to the large grains in the compact thin film. The discharge power and working pressure have great influence on the sputtered Mo thin films. High efficiency of 12.5% was achieved for the Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells with Mo electrodes prepared at 1200 W and low working pressures. By further optimizing material and device properties, the conversion efficiency has reached to 15.2%.

Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

NARCIS (Netherlands)

Nguyen, Duc Minh; Dekkers, Jan M.; Houwman, Evert Pieter; Vu, H.T.; Vu, Hung N.; Rijnders, Augustinus J.H.M.

2016-01-01

Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization

Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films

Directory of Open Access Journals (Sweden)

M. Vahidi

2014-04-01

Full Text Available Ferromagnetic Heusler Co2FeAl0.5Si0.5 epitaxial thin-films have been fabricated in the L21 structure with saturation magnetizations over 1200 emu/cm3. Andreev reflection measurements show that the spin polarization is as high as 80% in samples sputtered on unheated MgO (100 substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates.

Thin films and nanomaterials

International Nuclear Information System (INIS)

Jayakumar, S.; Kannan, M.D.; Prasanna, S.

2012-01-01

The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Science.gov (United States)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

12. International conference on thin films (ICTF 12). Book of Abstract

International Nuclear Information System (INIS)

Majkova, E.

2002-09-01

The publication has been set up as a proceedings of the conference dealing with thin films production and study of their properties. The conference was focused on the following topics: (1) Advanced deposition techniques; (2) Thin Film Growth; (3) Diagnostics, Structure - Properties Relationship; (4) Mechanical Properties and Stress; (5) Protective and Functional Coatings; (6) Micropatterning and Nanostructures; (7) EUV and Soft X-Ray Multilayers; (8) Magnetic Thin Films and Multilayers; (9) Organic Thin Films; (10) Thin Films for Electronics and Optics. In this proceedings totally 157 abstracts are published of which 126 are interest for INIS

The effects of heat treatment on optical, structural, electrochromic and bonding properties of Nb{sub 2}O{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Coşkun, Özlem Duyar, E-mail: duyar@hacettepe.edu.tr [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey); Demirel, Selen, E-mail: nymph24@gmail.com [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey); Hacettepe University, Nanotechnology and Nanomedicine Department, Ankara (Turkey); Atak, Gamze, E-mail: gbaser@hacettepe.edu.tr [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey)

2015-11-05

Nb{sub 2}O{sub 5} thin films were deposited onto heated glass substrates by RF magnetron sputtering using a Nb{sub 2}O{sub 5} target. The films were annealed in air at temperatures between 400 and 700 °C for 6 h. Effects of the crystalline structure on optical, structural, electrochromic and bonding properties of the Nb{sub 2}O{sub 5} thin films were investigated by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical spectrophotometry and electrochemical measurements. The film refractive index varied between 2.09 and 2.22 at the wavelength of 550 nm depending on the annealing temperature. The decrease of the optical band gap revealed for the films with increasing annealing temperature is attributed to oxygen-ion vacancies in the film structure. The orthorhombic structure of Nb{sub 2}O{sub 5} films resulted in good electrochromic properties with high colouration efficiencies of 19.56 cm{sup 2}/C and 53.24 cm{sup 2}/C at 550 nm and 1000 nm, respectively. The optical, structural and electrochromic properties of the different crystalline polymorphic forms of the Nb{sub 2}O{sub 5} films make them attractive for optical applications. - Highlights: • Stoichiometric Nb{sub 2}O{sub 5} films prepared using RF magnetron sputtering technique. • The different crystalline forms of Nb{sub 2}O{sub 5} thin films obtained by annealing. • The optical, structural and electrochromic properties of the films were investigated. • The optical band gap decreased with increasing annealing temperature. • The orthorhombic T-Nb{sub 2}O{sub 5} films exhibited a higher colouration efficiency.

The optical properties of plasma polymerized polyaniline thin films

Energy Technology Data Exchange (ETDEWEB)

Goktas, Hilal, E-mail: hilal_goktas@yahoo.com [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Demircioglu, Zahide; Sel, Kivanc [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Gunes, Taylan [Yalova University, Energy Systems Engineering Department, 77100 Yalova (Turkey); Kaya, Ismet [Canakkale Onsekiz Mart University, Chemistry Department, 17020 Canakkale (Turkey)

2013-12-02

We report herein the characterizations of polyaniline thin films synthesized using double discharge plasma system. Quartz glass substrates were coated at a pressure of 80 Pa, 19.0 kV pulsed and 1.5 kV dc potential. The substrates were located at different regions in the reactor to evaluate the influence of the position on the morphological and molecular structure of the obtained thin films. The molecular structure of the thin films was investigated by Fourier transform infrared (FTIR) and UV–visible photospectrometers (UV–vis), and the morphological studies were carried out by scanning electron microscope. The FTIR and UV–vis data revealed that the molecular structures of the synthesized thin films were in the form of leuocoemeraldine and exhibited similar structures with the films produced via chemical or electrochemical methods. The optical energy band gap values of the as-grown samples ranged from 2.5 to 3.1 eV, which indicated that these materials have potential applications in semiconductor devices. The refractive index in the transparent region (from 650 to 1000 nm) steadily decreased from 1.9 to 1.4 and the extinction coefficient was found to be on order of 10{sup −4}. The synthesized thin films showed various degrees of granular morphologies depending on the location of the substrate in the reactor. - Highlights: • Polyaniline thin films were synthesized for the first time via double discharge plasma system. • The films have similar structure to that of the chemically synthesized films. • The morphology of the films could be tuned by this technique. • These materials would have potential applications at semiconductor devices.

Formation of SmFe5(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

International Nuclear Information System (INIS)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmFe 5 (0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe 5 structure forming an alloy compound of Sm(Fe,Cu) 5 . The Sm(Fe,Cu) 5 film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

Characterization of Sucrose Thin Films for Biomedical Applications

Directory of Open Access Journals (Sweden)

S. L. Iconaru

2011-01-01

Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

ITO thin films deposited by advanced pulsed laser deposition

International Nuclear Information System (INIS)

Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

2007-01-01

Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

Solar control on irradiated Ta2O2 thin films

International Nuclear Information System (INIS)

Baydogan, N. D.; Zayim, E. Oe.

2007-01-01

Thin films consisting of Ta 2 O 5 have been used in industry in applications related to thin-film capacitors, optical waveguides, and antireflection coatings on solar cells. Ta 2 O 5 films are used for several special applications as highly refractive material and show different optical properties depending on the deposition methods. Sol-gel technique has been used for the preparation of Ta 2 O 5 thin films. Ta 2 O 5 thin films were prepared by sol-gel proses on glass substrates to obtain good quality films. These films were exposed to gamma radiation from Co-60 radioisotope. Ta 2 O 5 coated thin films were placed against the source and irradiated for 8 different gamma doses; between 0.35 and 21.00 kGy at room temperature. Energetic gamma ray can affect the samples and change its colour. On the other hand some of the Ta 2 O 5 coated thin films were irradiated with beta radiation from Sr-90 radioisotope. The effect of gamma irradiation on the solar properties of Ta 2 O 5 films is compared with that of beta irradiation. The solar properties of the irradiated thin films differ significantly from those of the unirradiated ones. After the irradiation of the samples transmittance and reflectance are measured for solar light between 300 and 2100 nm, by using Perkin Elmer Lambda 9 UV/VIS/NIR Spectrophotometer. Change in the direct solar transmittance, reflectance and absorptance with absorbed dose are determined. Using the optical properties, the redistribution of the absorbed component of the solar radiation and the shading coefficient (SC) are calculated as a function of the convective heat-transfer coefficient. Solar parameters are important for the determination of the shading coefficient. When the secondary internal heat transfer factor (qi), direct solar transmittance (□ e ), and solar factor (g) are known, it is possible to determine shading coefficient via the dose rates. The shading coefficient changes as the dose rate is increased. In this study, the shading

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

Science.gov (United States)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

International Nuclear Information System (INIS)

Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

2013-01-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Biomimetic thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Graff, G.L.; Campbell, A.A.; Gordon, N.R.

1995-05-01

The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

Strain profile and polarization enhancement in Ba0.5Sr0.5TiO3 thin films

International Nuclear Information System (INIS)

Amir, F.Z.; Donner, W.; Aspelmeyer, M.; Noheda, B.; Xi, X.X.; Moss, S.C.

2012-01-01

The sensitivity of spontaneous polarization to epitaxial strain for both 10 and 50 nm thick Ba 0.5 Sr 0.5 TiO 3 (BSTO) ferroelectric thin films has been studied. Crystal truncation rod (CTR) profiles in the 00L directions at different wavelengths, and grazing incidence diffraction (GID) in the 0K0 direction on a single crystal have been recorded. Modeling of the CTR data gives a detailed picture of the strain and provides clear evidence of the film out-of-plane expansion at the surface, an increase of the polarization, as well as a contraction at the interface. GID data confirm the fitting of the CTR, showing an in-plane expansion of the BSTO film at the interface and a contraction at the surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

Terahertz conductivity measurement of FeSe0.5Te0.5 and Co-doped BaFe2As2 thin films

International Nuclear Information System (INIS)

Nakamura, D.; Akiike, T.; Takahashi, H.; Nabeshima, F.; Imai, Y.; Maeda, A.; Katase, T.; Hiramatsu, H.; Hosono, H.; Komiya, S.; Tsukada, I.

2011-01-01

We investigated the THz conductivity of FeSe 0.5 Te 0.5 and Ba (Fe 2-x Co x )As 2 thin films. We estimated the superconducting gap energy values. We found anomolous conductivity spectrum in the antiferromagnetic phase. The terahertz (THz) conductivity of FeSe 0.5 Te 0.5 ('11'-type) and Co-doped BaFe 2 As 2 ('122'-type) thin films are investigated. For '11'-type, the frequency dependence of the complex conductivity can be understood as that of BCS-type superconductor near the superconducting gap energy, and we estimated the superconducting gap energy to be 0.6 meV. For '122'-type, we estimated the superconducting gap energy to be 2.8 meV, which is considered to be the superconducting gap opened at the electron-type Fermi surface near the M point.

Colossal elastoresistance, electroresistance and magnetoresistance in Pr0.5Sr0.5MnO3 thin films

Science.gov (United States)

Chen, Liping; Guo, Xuexiang; Gao, J.

2016-05-01

Pr0.5Sr0.5MnO3 thin films on substrates of (001)-oriented LaAlO3 were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of 1.3% brings a great resistivity change of 98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I1 μA)-ρ(I1000 μA)]/ρ(I1 μA) reaches 70% at T=25 K, much higher than ER 7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

Thin Film & Deposition Systems (Windows)

Data.gov (United States)

Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

A novel application of the CuI thin film for preparing thin copper nanowires

International Nuclear Information System (INIS)

Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

2005-01-01

We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

Room temperature ferroelectricity in continuous croconic acid thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

Characterization of organic thin films

CERN Document Server

Ulman, Abraham; Evans, Charles A

2009-01-01

Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

Science.gov (United States)

Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

2018-05-01

Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

Ferroelectric and piezoelectric properties of lead-free BaTiO{sub 3} doped Bi{sub 0.5}Na{sub 0.5}TiO{sub 3} thin films from metal-organic solution deposition

Energy Technology Data Exchange (ETDEWEB)

Acharya, Susant Kumar [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Semiconductor Science and Technology, Basic Research Laboratory (BRL), Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lee, Sang-Kwon; Hyung, Jung-Hwan [Department of Semiconductor Science and Technology, Basic Research Laboratory (BRL), Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, Yun-Ho; Kim, Bok-Hee [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Ahn, Byung-Guk, E-mail: bkahn@jbnu.ac.kr [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2012-11-05

Highlights: Black-Right-Pointing-Pointer Lead-free BNT-BT thin films from an optimized metal-organic solution deposition. Black-Right-Pointing-Pointer Phase and microstructure evolution with annealing temperature. Black-Right-Pointing-Pointer A relatively low leakage current density. Black-Right-Pointing-Pointer Good dielectric constant of 613 at a frequency of 1 kHz. Black-Right-Pointing-Pointer High remanent polarization and piezoelectric constant comparable to PZT thin films. - Abstract: Lead-free 0.94Bi{sub 0.5}Na{sub 0.5}TiO{sub 3}-0.06BaTiO{sub 3} (BNT-BT) piezoelectric thin films were prepared by metal-organic solution deposition onto a Pt/Ti/SiO{sub 2}/Si substrate. A dense and well crystallized thin film with a perovskite phase was obtained by annealing these films at 700 Degree-Sign C. Atomic force microscopy showed that these films were smooth and crack-free with an average grain size on the order of 200 nm. Thin films of 356 nm thickness exhibited a small signal dielectric constant and a loss tangent at 1 kHz of 613 and 0.044, respectively. Ferroelectric hysteresis measurements indicated a remanent polarization value of 21.5 {mu}C/cm{sup 2} with a coercive field of 164.5 kV/cm. The leakage current density of the thin film was 4.08 Multiplication-Sign 10{sup -4} A/cm{sup 2} at an applied electric field of 200 kV/cm. A typical butterfly-shaped piezoresponse loop was observed and the effective piezoelectric coefficient (d{sub 33}) of the BNT-BT thin film was approximately 51.6 pm/V.

Raman spectroscopy of optical properties in CdS thin films

Directory of Open Access Journals (Sweden)

Trajić J.

2015-01-01

Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

Polar phase transitions in heteroepitaxial stabilized La0.5Y0.5AlO3 thin films

Science.gov (United States)

Liu, Shenghua; Zhang, Chunfeng; Zhu, Mengya; He, Qian; Chakhalian, Jak; Liu, Xiaoran; Borisevich, Albina; Wang, Xiaoyong; Xiao, Min

2017-10-01

We report on the fabrication of epitaxial La0.5Y0.5AlO3 ultrathin films on (001) LaAlO3 substrates. Structural characterizations by scanning transmission electron microscopy and x-ray diffraction confirm the high quality of the film with a - b + c - AlO6 octahedral tilt pattern. Unlike either of the nonpolar parent compound, LaAlO3 and YAlO3, second harmonic generation measurements on the thin films suggest a nonpolar-polar phase transition at T c near 500 K, and a polar-polar phase transition at T a near 160 K. By fitting the angular dependence of the second harmonic intensities, we further propose that the two polar structures can be assigned to the Pmc2 1 and Pmn2 1 space group, while the high temperature nonpolar structure belongs to the Pbnm space group.

Self-Limited Growth in Pentacene Thin Films.

Science.gov (United States)

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Electrodeposited Structurally Stable V2O5 Inverse Opal Networks as High Performance Thin Film Lithium Batteries.

Science.gov (United States)

Armstrong, Eileen; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2015-12-09

High performance thin film lithium batteries using structurally stable electrodeposited V2O5 inverse opal (IO) networks as cathodes provide high capacity and outstanding cycling capability and also were demonstrated on transparent conducting oxide current collectors. The superior electrochemical performance of the inverse opal structures was evaluated through galvanostatic and potentiodynamic cycling, and the IO thin film battery offers increased capacity retention compared to micron-scale bulk particles from improved mechanical stability and electrical contact to stainless steel or transparent conducting current collectors from bottom-up electrodeposition growth. Li(+) is inserted into planar and IO structures at different potentials, and correlated to a preferential exposure of insertion sites of the IO network to the electrolyte. Additionally, potentiodynamic testing quantified the portion of the capacity stored as surface bound capacitive charge. Raman scattering and XRD characterization showed how the IO allows swelling into the pore volume rather than away from the current collector. V2O5 IO coin cells offer high initial capacities, but capacity fading can occur with limited electrolyte. Finally, we demonstrate that a V2O5 IO thin film battery prepared on a transparent conducting current collector with excess electrolyte exhibits high capacities (∼200 mAh g(-1)) and outstanding capacity retention and rate capability.

Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

Science.gov (United States)

Yilixiati, Subinuer; Zhang, Yiran; Pearsall, Collin; Sharma, Vivek

Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freestanding thin films. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm are visualized and analyzed using IDIOM protocols. We distinguish nanoscopic rims, mesas and craters and show that the non-flat features are sculpted by oscillatory, periodic, supramolecular structural forces that arise in confined fluids

Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

International Nuclear Information System (INIS)

Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

2006-01-01

Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

Synthesis and characterization of Ba_0_._5Pb_0_._5TiO_3 perovskite - type thin films deposited by spin coating at low temperatures

International Nuclear Information System (INIS)

Wermuth, T.B.; Wiederkehr, N.A.; Alves, A.K.; Bergmann, C.P.

2014-01-01

In this paper we present a non-aqueous sol-gel route for the obtention of solid compounds and thin films of oxide type- perovskite ABO_3, such as Ba_0_._5 Pb_0_._5 TiO_3, synthesized by sol - gel route with subsequent heat treatment. The solid compounds were characterized by X-ray diffraction (XRD) techniques and thermal analysis (TGA / DTA). The thin film was obtained by using spin-coating techniques at low temperatures onto commercial substrates of polymethylmethacrylate (PMMA) and characterized by contact angle, atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results show that the films present microstructures and roughness directly related to annealing temperatures, characterized by the formation of crystalline nanostructures with surface regularity and transparency. (author)

Laser-induced damage to thin film dielectric coatings

International Nuclear Information System (INIS)

Walker, T.W.

1980-01-01

The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process

CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

Science.gov (United States)

Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

2018-04-01

Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

Niobium Pentoxide thin films employ simple colloidal suspension at low preparation temperature

Directory of Open Access Journals (Sweden)

Abood M. K.

2017-01-01

Full Text Available In this work a nano-colloidal suspension is used to prepare Nb2O5 thin films. The effect of different substrates on structural properties of niobium pentoxide thin film deposited by spin coating technique on silicon and quartz substrates are presented. We observed that the obtained structure is monocline in both substrates. The diffraction peaks in both substrates ensured the successful formation of Nb2O5 thin films with a clear polymorphous structure. However, the structure became more crystalline with additional distinguished peaks on silicon substrate comparing to quartz substrate. The extracted structural parameters from X-Ray diffraction show that the grain size of the thin films on quartz is smaller than silicon with the values of 16.47 nm and 20.98 nm respectively. The stress measurement records the values of 0.19 and 0.00719 for the thin films deposited on silicon and quartz substrates respectively. Effects of film thickness depicted increment in the absorbance and reduction in the band gap. Energy gaps of 2.7, 2.58 and, 2.5 eV are measured as a result of increasing the film thicknesses of 325, 420 and 450 nm respectively.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Analysis of Hard Thin Film Coating

Science.gov (United States)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Compositional ratio effect on the surface characteristics of CuZn thin films

Science.gov (United States)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Effects of bacteria on CdS thin films used in technological devices

Science.gov (United States)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov (United States)

Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

Colossal elastoresistance, electroresistance and magnetoresistance in Pr0.5Sr0.5MnO3 thin films

International Nuclear Information System (INIS)

Chen, Liping; Guo, Xuexiang; Gao, J.

2016-01-01

Pr 0.5 Sr 0.5 MnO 3 thin films on substrates of (001)-oriented LaAlO 3 were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of ~1.3% brings a great resistivity change of ~98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I 1 μA )−ρ(I 1000 μA )]/ρ(I 1 μA ) reaches ~70% at T=25 K, much higher than ER~7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence. - Highlights: • The electric current-induced electroresistance (ER) and magnetoresistance (MR)studies on PLD grown Pr 0.5 Sr 0.5 MnO 3 /(001) LaAlO 3 films were found to be greatly sensitive to the film thickness arising from the strain. • It is shown that, 60 nm film exhibit compressive in-plane strain which leads to phase separation and hence colossal MR and ER. • Our results suggest that the manganites located at phase boundary may be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance.

Electrochemical fabrication of nanoporous polypyrrole thin films

Energy Technology Data Exchange (ETDEWEB)

Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

2008-04-30

Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

Electrochemical fabrication of nanoporous polypyrrole thin films

International Nuclear Information System (INIS)

Li Mei; Yuan Jinying; Shi Gaoquan

2008-01-01

Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

Energy Technology Data Exchange (ETDEWEB)

Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

2016-02-15

We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

Thermochromic effect at room temperature of Sm{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Boileau, A.; Capon, F.; Barrat, S.; Pierson, J. F. [Universite de Lorraine, Institut Jean Lamour, Departement CP2S, UMR CNRS 7198, Nancy, F-54042 (France); Laffez, P. [Groupe de Recherche Electronique, Materiaux, Acoustique, Nanoscience (GREMAN), Universite Francois Rabelais de Tours, UMR CNRS 7347, IUT de Blois, 15 rue de la Chocolaterie, Blois, F-41000 (France)

2012-06-01

Sm{sub 0.5}Ca{sub 0.5}MnO{sub 3} thermochromic thin films were synthesized using dc reactive magnetron co-sputtering and subsequent annealing in air. The film structure was studied by x-ray diffraction analysis. To validate the thermochromic potentiality of Sm{sub 0.5}Ca{sub 0.5}MnO{sub 3}, electrical resistivity and infrared transmittance spectra were recorded for temperatures ranging from 77 K to 420 K. The temperature dependence of the optical band gap was estimated in the near infrared range. Upon heating, the optical transmission decreases in the infrared domain showing a thermochromic effect over a wide wavelength range at room temperature.

Formation of SmFe{sub 5}(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

Energy Technology Data Exchange (ETDEWEB)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: yabuhara@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2010-01-01

SmFe{sub 5}(0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe{sub 5} structure forming an alloy compound of Sm(Fe,Cu){sub 5}. The Sm(Fe,Cu){sub 5} film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

Function and application of ultra thin films

Energy Technology Data Exchange (ETDEWEB)

Sasabe, Hiroyuki

1988-02-01

A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

Science.gov (United States)

Venkata Saravanan, K.; Raju, K. C. James

2014-03-01

The surface chemical states of RF-magnetron sputtered Ba0.5Sr0.5TiO3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O2 -, adsorbed oxide ion O- and lattice oxide ion O2-) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP ≦̸ 25%), whereas the films deposited in oxygen rich atmosphere (OMP ≧̸ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ~65% (@280 kV cm-1), with good ɛ r-E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications.

Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

Energy Technology Data Exchange (ETDEWEB)

Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

2017-08-01

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

Characterizations of photoconductivity of graphene oxide thin films

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Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

Evidence of the semiconductor-metal transition in V{sub 2}O{sub 5} thin films by the pulsed laser photoacoustic method

Energy Technology Data Exchange (ETDEWEB)

Perez-Pacheco, A.; Acosta-Najarro, D. R.; Cruz-Manjarrez, H.; Rodriguez-Fernandez, L.; Pineda-Santamaria, J. C; Aguilar-Franco, M. [Instituto de Fisica-Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Castaneda-Guzman, R. [Laboratorio de Fotofisica y Peliculas Delgadas, CCADET-UNAM, Mexico DF (Mexico)

2013-05-14

In this work, the pulsed photoacoustic technique was used to investigate the semiconductor-metal transition of thin vanadium pentoxide films (V{sub 2}O{sub 5}) under increasing temperature. The V{sub 2}O{sub 5} thin films were simultaneously deposited by RF magnetron sputtering at room temperature, on corning glass and SnO{sub 2}:F/glass substrates, in order to compare the photoacoustic response. The elemental and structural analysis of the V{sub 2}O{sub 5} films was performed by Rutherford backscattering spectroscopy and X-ray diffraction. The optical transmission and band gap were determined using UV-Vis spectroscopy. The electrical properties were measured using four-point probe measurements with the Van der Pauw geometry.

Radiation induced luminescence from a dipole immersed in a thin film

International Nuclear Information System (INIS)

Nkoma, J.S.

1990-08-01

Luminescence is modelled as electromagnetic radiation from a dipole immersed in a thin film. Maxwell's equations are solved for the cases when the dipole in the thin film is oriented normal and parallel to the interfaces. Expressions for emitted electric fields outside the thin film are derived and are found to have a resonant denominator that vanishes at the surface polariton excitation frequencies for a thin film. Luminescent spectra are plotted and peaks are found that are identified to be associated with both surface response and bulk response. Numerical results are presented to illustrate the model by considering a vacuum-GaP-sapphire system. (author). 9 refs, 5 figs

Laser process for extended silicon thin film solar cells

International Nuclear Information System (INIS)

Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

2011-01-01

We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

Effect of visible light on the optical properties of a-(Ge2Sb2Te5)90Ag10 thin film

Science.gov (United States)

Singh, Palwinder; Thakur, Anup

2018-05-01

(Ge2Sb2Te5)90Ag10 (GST-Ag) bulk alloy was prepared using melt quenching technique. GST-Ag thin film was deposited on glass substrate using thermal evaporation method. The prepared thin films were exposed to visible light (intensity of 105 Lux for 2, 8, 20 and 30 hours) using 25W LED lamp. Transmission spectra were taken using UV-vis-NIR spectrophotometer in the wavelength range 800-3200 nm. Optical band gap of as-deposited and light exposed thin films was determined using Tauc's plot. Optical band gap was found to be decreasing on light exposure upto 8 hours and after that no significant change was observed.

Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

Quantitative analysis of tear film fluorescence and discomfort during tear film instability and thinning.

Science.gov (United States)

Begley, Carolyn; Simpson, Trefford; Liu, Haixia; Salvo, Eliza; Wu, Ziwei; Bradley, Arthur; Situ, Ping

2013-04-12

The purpose of this study was to test the association between tear film fluorescence changes during tear break-up (TBU) or thinning and the concurrent ocular sensory response. Sixteen subjects kept one eye open as long as possible (MBI), indicated their discomfort level continuously, and rated ocular sensations of irritation, stinging, burning, pricking, and cooling using visual analog scales (VAS). Fluorescence of the tear film was quantified by a pixel-based analysis of the median pixel intensity (PI), TBU, and percentage of dark pixels (DarkPix) over time. A cutoff of 5% TBU was used to divide subjects into either break-up (BU) or minimal break-up (BUmin) groups. Tear film fluorescence decreased (median PI) and the percentage of TBU and DarkPix increased in all trials, with the rate significantly greater in the BU than the BUmin group (Mann-Whitney U test, P film thinning best explains decreasing tear film fluorescence during trials. This was highly correlated with increasing ocular discomfort, suggesting that both tear film thinning and TBU stimulate underlying corneal nerves, although TBU produced more rapid stimulation. Slow increases in tear film hyperosmolarity may cause the gradual increase in discomfort during slow tear film thinning, whereas the sharp increases in discomfort during TBU suggest a more complex stimulus.

Magnetic neutron diffraction of MnO thin films

International Nuclear Information System (INIS)

Neubeck, W.; Vettier, C.; Mannix, D.; Bernhoeft, N.; Hiess, A.; Ranno, L.; Givord, D.

1999-01-01

We report on magnetic neutron diffraction carried out on various epitaxial MnO(III) thin films grown on sapphire and MgO substrates. In all samples, of masses between 5 and 50 μg, magnetic Bragg peaks have been observed. The films exhibit what appears to be continuous phase-transitions in contrast to the strongly discontinuous transition exhibited by bulk samples. In addition, the Neel temperature of films prepared on sapphire substrates is strongly enhanced above that of the bulk whilst that of the film grown on MgO is depressed. The possibility to measure magnetic excitations in such thin film systems is discussed in the light of promising test results obtained from an inelastic magnetic neutron scattering experiment on the IN8 spectrometer. (authors)

Fabrication and evaluation of green-light emitting Ta2O5:Er, Ce co-sputtered thin films

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K. Miura

2015-01-01

Full Text Available Erbium and cerium co-doped tantalum-oxide (Ta2O5:Er, Ce thin films were fabricated using radio-frequency co-sputtering of Ta2O5, Er2O3, and CeO2 for the first time. Enhanced green-light emission due to Er3+ that seems to be sensitized by Ce3+ was observed from the film annealed at 900 °C for 20 min. From XRD measurements of the films, the β-Ta2O5 (orthorhombic, δ-Ta2O5 (hexagonal, and (201 Ta2O5 phases seem to be very important for obtaining green PL from them. Such Ta2O5:Er, Ce co-sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel green-light-emitting devices, and they will also be used as multi-functional coating films that can work both as anti-reflection and down-conversion films for realizing high-efficiency silicon solar cells.

Thin film tritium dosimetry

Science.gov (United States)

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Preparation and characterization of highly L21-ordered full-Heusler alloy Co2FeAl0.5Si0.5 thin films for spintronics device applications

International Nuclear Information System (INIS)

Wang Wenhong; Sukegawa, Hiroaki; Shan Rong; Furubayashi, Takao; Inomata, Koichiro

2008-01-01

We report the investigation of structure and magnetic properties of full-Heusler alloy Co 2 FeAl 0.5 Si 0.5 (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2 1 ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications

Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

Interfaces and thin films physics

International Nuclear Information System (INIS)

Equer, B.

1988-01-01

The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

Buckling of Thin Films in Nano-Scale

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Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Hydrophobicity studies of polymer thin films with varied CNT concentration

Science.gov (United States)

M. Rodzi, N. H.; M. Shahimin, M.; Poopalan, P.; Man, B.; M. Nor, M. N.

2013-12-01

Surface functionalization studies for re-creating a `Lotus Leaf' effect (superhydrophobic) have been carried out for the past decade; looking for the material which can provide high transparency, low energy surface and high surface roughness. Fabrication of polydimethylsiloxane (PDMS) and multiwalled carbon nanotubes (MWCNT) hybrid thin film variations on glass to produce near-superhydrophobic surfaces is presented in this paper. There are three important parameters studied in producing hydrophobic surfaces based on the hybrid thin films; concentration of PDMS, concentration of MWCNT and droplet sizes. The study is carried out by using PDMS of varied cross linker ratio (10:1, 30:1 and 50:1) with MWCNT concentration of 1mg, 10mg and 15mg for 0.5 μl, 2.0 μl, 5.0 μl and 10 μl droplet sizes. The resulting hybrid thin films show that hydrophobicity increased with increasing cross linker ratio and MWCNT percentage in the PDMS solution. A near superhydrophobic surface can be created when using 15 mg of MWCNT with 50:1 cross linker ratio PDMS thin films, measured on 10 μl droplet size. The hybrid thin films produced can be potentially tailored to the application of biosensors, MEMS and even commercial devices.

Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

Science.gov (United States)

Bi, Han; Sun, Qingqing; Zhao, Xuebing; You, Wenbin; Zhang, David Wei; Che, Renchao

2018-04-01

Recently, non-volatile semiconductor memory devices using a ferroelectric Hf0.5Zr0.5O2 film have been attracting extensive attention. However, at the nano-scale, the phase structure remains unclear in a thin Hf0.5Zr0.5O2 film, which stands in the way of the sustained development of ferroelectric memory nano-devices. Here, a series of electron microscopy evidences have illustrated that the interfacial strain played a key role in inducing the orthorhombic phase and the distorted tetragonal phase, which was the origin of the ferroelectricity in the Hf0.5Zr0.5O2 film. Our results provide insight into understanding the association between ferroelectric performances and microstructures of Hf0.5Zr0.5O2-based systems.

Processing of thin SU-8 films

International Nuclear Information System (INIS)

Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja

2008-01-01

This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Resistance switching induced by electric fields in manganite thin films

International Nuclear Information System (INIS)

Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

2007-01-01

In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

Nano-Impact (Fatigue Characterization of As-Deposited Amorphous Nitinol Thin Film

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Rehan Ahmed

2012-08-01

Full Text Available This paper presents nano-impact (low cycle fatigue behavior of as-deposited amorphous nitinol (TiNi thin film deposited on Si wafer. The nitinol film was 3.5 µm thick and was deposited by the sputtering process. Nano-impact tests were conducted to comprehend the localized fatigue performance and failure modes of thin film using a calibrated nano-indenter NanoTest™, equipped with standard diamond Berkovich and conical indenter in the load range of 0.5 mN to 100 mN. Each nano-impact test was conducted for a total of 1000 fatigue cycles. Depth sensing approach was adapted to understand the mechanisms of film failure. Based on the depth-time data and surface observations of films using atomic force microscope, it is concluded that the shape of the indenter test probe is critical in inducing the localized indentation stress and film failure. The measurement technique proposed in this paper can be used to optimize the design of nitinol thin films.

Magnetic and electrical transport properties of LaBaCo2O(5.5+δ) thin films on vicinal (001) SrTiO3 surfaces.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Collins, Gregory; Wang, Haibin; Bao, Shanyong; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Lin, Yuan; Whangbo, Myung-Hwan

2013-01-23

Highly epitaxial LaBaCo(2)O(5.5+δ) thin films were grown on the vicinal (001) SrTiO(3) substrates with miscut angles of 0.5°, 3.0°, and 5.0° to systemically study strain effect on its physical properties. The electronic transport properties and magnetic behaviors of these films are strongly dependent on the miscut angles. With increasing the miscut angle, the transport property of the film changes from semiconducting to semimetallic, which results most probably from the locally strained domains induced by the surface step terraces. In addition, a very large magnetoresistance (34% at 60 K) was achieved for the 0.5°-miscut film, which is ~30% larger than that for the film grown on the regular (001) SrTiO(3) substrates.

Immobilization of Ochrobactrum tritici As5 on PTFE thin films for arsenite biofiltration.

Science.gov (United States)

Branco, Rita; Sousa, Tânia; Piedade, Ana P; Morais, Paula V

2016-03-01

Ochrobactrum tritici SCII24T bacteria is an environmental strain with high capacity to resist to arsenic (As) toxicity, which makes it able to grow in the presence of As(III). The inactivation of the two functional arsenite efflux pumps, ArsB and ACR3_1, resulted in the mutant O. tritici As5 exhibiting a high accumulation of arsenite. This work describes a method for the immobilization of the mutant cells O. tritici As5, on a commercial polymeric net after sputtered modified by the deposition of poly(tetrafluoroethylene) (PTFE) thin films, and demonstrates the capacity of immobilized cells to accumulate arsenic from solutions. Six different set of deposition parameters for PTFE thin films were developed and tested in vitro regarding their ability to immobilize the bacterial cells. The surface that exhibited a mild zeta potential value, hydrophobic characteristics, the lowest surface free energy but with a high polar component and the appropriate ratio of chemical reactive groups allowed cells to proliferate and to grow as a biofilm. These immobilized cells maintained their ability to accumulate the surrounding arsenite, making it a great arsenic biofilter to be used in bioremediation processes. Copyright © 2015 Elsevier Ltd. All rights reserved.

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

Science.gov (United States)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Superconducting properties of iron chalcogenide thin films

Directory of Open Access Journals (Sweden)

Paolo Mele

2012-01-01

Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

Electric and magnetic fields effects on the transport properties of La0.5Ca0.5MnO3 thin films

International Nuclear Information System (INIS)

Villafuerte, M.; Duhalde, S.; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L.

2004-01-01

The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La 0.5 Ca 0.5 MnO 3 thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported

Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

International Nuclear Information System (INIS)

Venkata Saravanan, K; James Raju, K C

2014-01-01

The surface chemical states of RF-magnetron sputtered Ba 0.5 Sr 0.5 TiO 3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O 2 − , adsorbed oxide ion O − and lattice oxide ion O 2− ) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP not ≦ 25%), whereas the films deposited in oxygen rich atmosphere (OMP not ≧ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O 2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ∼65% (@280 kV cm −1 ), with good ϵ r -E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications. (papers)

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

Improvement of physical properties of ZnO thin films by tellurium doping

Energy Technology Data Exchange (ETDEWEB)

Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

2014-11-01

Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

Study on the Preparation and Properties of Colored Iron Oxide Thin Films

International Nuclear Information System (INIS)

Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

2013-01-01

Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Fractal features of CdTe thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

2015-12-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Fractal features of CdTe thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

2015-01-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Ce-doping effects on electronic structures of Ba0.5Sr0.5TiO3 thin film

International Nuclear Information System (INIS)

Wang, S Y; Cheng, B L; Wang, Can; Button, T W; Dai, S Y; Jin, K J; Lu, H B; Zhou, Y L; Chen, Z H; Yang, G Z

2006-01-01

In order to clarify the basic reason why Ce doping can dramatically decrease the leakage current in Ba 0.5 Sr 0.5 TiO 3 (BST) as reported in our previous work (Wang et al 2005 J. Phys. D: Appl. Phys. 38 2253), we have employed x-ray photoelectron spectroscopy (XPS) and the optical transmittance technique to study the electronic structure of undoped and 1.0 at% Ce-doped BST (CeBST) films fabricated by pulsed laser deposition. XPS results show that Ce doping has a strong influence on the valence band and core levels of BST films, and that the Fermi level is lowered by about 0.35 eV by Ce doping. Optical transmittance measurements demonstrate that the energy gap is expanded with Ce doping. These Ce-doping effects can induce an increase in the barrier height for the thermionic emission and eventually reduce leakage current in CeBST thin films

Organo-layered double hydroxides composite thin films deposited by laser techniques

Energy Technology Data Exchange (ETDEWEB)

Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

2016-06-30

Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Unraveling the magnetic properties of BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Vinai, G.; Petrov, A. Yu.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Khare, A. [CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy); Department of Physics, Sungkyunkwan University, Suwon 440 746 (Korea, Republic of); Rana, D. S. [Department of Physics, Indian Institute of Science Education and Research Bhopal, Govindpura, Bhopal 462023 (India); Di Gennaro, E.; Scotti di Uccio, U.; Miletto Granozio, F. [CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy); Gobaut, B. [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Moroni, R. [CNR-SPIN, Corso Perrone 24, I-16152 Genova (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Department of Physics, Università degli Studi di Milano, via Celoria 16, I-20133 Milano (Italy)

2015-11-01

We investigate the structural, chemical, and magnetic properties on BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO{sub 3} (STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

Thermal conductivities of thin, sputtered optical films

International Nuclear Information System (INIS)

Henager, C.H. Jr.; Pawlewicz, W.T.

1991-05-01

The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

An Alternating 5,5-Dimethylcyclopentadiene-based Copolymer prepared at Room Temperature for High Performance Organic Thin Film Transistors

KAUST Repository

Fei, Zhuping; Chen, Lei; Han, Yang; Gann, Eliot; Chesman, Anthony; McNeill, Christopher R.; Anthopoulos, Thomas D.; Heeney, Martin; Pietrangelo, Agostino

2017-01-01

We report that the inclusion of non-aromatic 5,5-dimethylcyclopentadiene monomer into a conjugated backbone is an attractive strategy to high performance semiconducting polymers. The use of this monomer enables a room temperature Suzuki copolymerization with a diketopyrrolopyrrole comono-mer to afford a highly soluble, high molecular weight material. The resulting low band gap polymer exhibits excellent photo and thermal stability, and despite a large π-π stacking distance of 4.26 Å, it demonstrates excellent performance in thin-film transistor devices.

An Alternating 5,5-Dimethylcyclopentadiene-based Copolymer prepared at Room Temperature for High Performance Organic Thin Film Transistors

KAUST Repository

Fei, Zhuping

2017-06-05

We report that the inclusion of non-aromatic 5,5-dimethylcyclopentadiene monomer into a conjugated backbone is an attractive strategy to high performance semiconducting polymers. The use of this monomer enables a room temperature Suzuki copolymerization with a diketopyrrolopyrrole comono-mer to afford a highly soluble, high molecular weight material. The resulting low band gap polymer exhibits excellent photo and thermal stability, and despite a large π-π stacking distance of 4.26 Å, it demonstrates excellent performance in thin-film transistor devices.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Chemically deposited Sb2S3 thin films for optical recording

International Nuclear Information System (INIS)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

2010-01-01

Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Gettering of carbon dioxide by erbium thin films

International Nuclear Information System (INIS)

Mehrhoff, T.K.

1980-01-01

The interaction of carbon dioxide and erbium thin films is characterized for temperatures in the region of 300 to 900 0 C and partial pressure of carbon dioxide near 5 x 10 -7 Torr. Dynamic film pumping speeds were measured against a mercury diffusion pump of known pumping speed and conductance. A quadrupole mass spectrometer was used to monitor the carbon dioxide flow which originated from a calibrated leak in the 10 -6 standard cm 3 /s range. Data reduction was via a dedicated minicomputer with associated printer/plotter. Temperature ramp experiments with thin erbium films indicated a significant reaction above 300 0 C. The reaction was preceded by the desorption of water vapor, hydrogen and nitrogen and/or carbon monoxide from the film surface

Thin liquid films dewetting and polymer flow

CERN Document Server

Blossey, Ralf

2012-01-01

This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

Self-assembly of dodecaphenyl POSS thin films

Science.gov (United States)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

Investigation of growth and characterization of nanostructured CuIn5S8 thin films produced by glancing angle deposition

International Nuclear Information System (INIS)

Sinaoui, A.; Chaffar-Akkari, F.; Gallas, B.; Demaille, D.; Kanzari, M.

2015-01-01

Ternary chalcogenide of copper and indium (CuIn 5 S 8 ) thin films were grown by thermal evaporation method using GLancing Angle Deposition (GLAD) technique. The samples were prepared under different incident angles (α = 0°, 40°, 60° and 85° measured from the normal to the substrate surface) with a substrate rotation of 2 rpm. X-ray diffraction, scanning electron microscopy, and ultraviolet–visible-infrared spectra are employed to characterize the microstructure and optical properties of the CuIn 5 S 8 thin films deposited by this technique. Under the GLAD conditions, we demonstrate that with substrate rotation, the columns were grown vertically due to the shadowing symmetry. The optical constants of the deposited films were determined from the analysis of transmission and reflection data. The results show that the refractive index and the thickness were decreased as α rises from 0° to 85° while the porosity and the Urbach energy were increased with increasing of the incident angle. The minimum refractive index is found to be 2.03 for the helical CuIn 5 S 8 film deposited at an angle of 85° and the Urbach energy was found to increase from 0.29 to 0.5 eV as α rises from 0° to 85°. Such changes of the optical behaviors are correlated with changes of the microstructure, especially a porous architecture which is favored for high incident angle. These properties exhibit potential for use in applications such as photonic crystals, graded index optical filters, and birefrigent omnidirectional reflectors. - Highlights: • GLancing angle deposition technique was employed to prepare CuIn 5 S 8 thin films. • CuIn 5 S 8 films exhibit a spinel structure with a preferred orientation along 311. • With substrate rotation, the columns were grown vertically due to shadowing symmetry. • The refractive index decreases with increasing glancing angle deposition. • Variations of the optical behaviors were correlated to the highly porous structure

Organic thin films and surfaces directions for the nineties

CERN Document Server

Ulman, Abraham

1995-01-01

Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

Development of wear resistant zirconium oxide thin films on stainless steel substrates

International Nuclear Information System (INIS)

Then, I.K.; Mujahid, M.; Zhang, B.

2005-01-01

The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 μm in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

Development of wear resistant zirconium oxide thin films on stainless steel substrates

Energy Technology Data Exchange (ETDEWEB)

Then, I.K.; Mujahid, M. [School of Materials Engineering, Nanyang Technological Univ. (Singapore); Zhang, B. [Dou Yee Technologies Pte Ltd, Bedok Industrial Park C (Singapore)

2005-07-01

The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 {mu}m in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

Impact of X-ray irradiation on PMMA thin films

International Nuclear Information System (INIS)

Iqbal, Saman; Rafique, Muhammad Shahid; Anjum, Safia; Hayat, Asma; Iqbal, Nida

2012-01-01

Highlights: ► PMMA thin films were deposited at 300 °C and 500 °C using PLD technique. ► These films were irradiated with different fluence of laser produced X-rays. ► Irradiation affects the ordered packing as well as surface morphology of film. ► Hardness of film decreases up to certain value of X-ray fluence. ► Absorption in UV–visible range exhibits a non linear behavior. - Abstract: The objective of this project is to explore the effect of X-ray irradiation of thin polymeric films deposited at various substrate temperatures. pulsed laser deposition (PLD) technique is used for the deposition of PMMA thin films on glass substrate at 300 °C and 500 °C. These films have been irradiated with various X-rays fluences ranging from 2.56 to 5.76 mJ cm −2 . Characterization of the films (before and after the irradiation) is done with help of X-ray Diffractrometer, Optical Microscope, Vickers hardness tester and UV–vis spectroscopy techniques. From XRD data, it is revealed that ordered packing has been improved for the films deposited at 300 °C. However after irradiation the films exhibited the amorphous behavior regardless of the X-ray fluence. Film deposited at 500 °C shows amorphous structure before and after irradiation. Hardness and particle size of thin film have also increased with the increasing substrate temperature. However, the irradiation has reverse effect i.e. the particle size as well as the hardness has reduced. Irradiation has also enhanced the absorption in the UV–visible region.

THz spectroscopy on superconducting NbN thin films

Energy Technology Data Exchange (ETDEWEB)

Daschke, Lena; Pracht, Uwe S.; Dressel, Martin; Scheffler, Marc [1. Physikalisches Institut, Universitaet Stuttgart (Germany); Ilin, Konstantin S.; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, Karlsruher Institut fuer Technologie (Germany)

2015-07-01

Epitaxial thin-film niobium nitride (NbN) is a conventional BCS superconductor. In presence of strong disorder, however, electronic inhomogeneities appear, which is not fully understood yet. To obtain a better insight into the physics of such disordered materials, studies on model systems such as structurally tailored films might be useful. Furthermore, disordered NbN films are used for single-photon detection devices, whose proper performance depends on a profound understanding of the superconducting properties. The studied NbN films have a T{sub c} ranging from 10 to 15 K and the superconducting energy gap is easily accessible with THz spectroscopy (0.4 - 5.6 meV). We investigate thin films of NbN sputtered on a sapphire substrate. With a Mach-Zehnder interferometer we measure the amplitude and phase shift of radiation transmitted through the thin-film sample. From there we can determine the real and imaginary parts of the optical conductivity. These results give information about the energy gap, Cooper pair density, and quasiparticle dynamics, including the temperature evolution of these quantities. We found that a film with 10 nm thickness roughly follows the BCS behavior, as expected. We will present results of our measurements on several different NbN samples.

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Effect of Sr doping on LaTiO3 thin films

International Nuclear Information System (INIS)

Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

2005-01-01

We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

Synthesis of Cu2O from CuO thin films: Optical and electrical properties

Directory of Open Access Journals (Sweden)

Dhanya S. Murali

2015-04-01

Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

Separation of valence states in thin films with mixed V{sub 2}O{sub 5} and V{sub 7}O{sub 16} phases

Energy Technology Data Exchange (ETDEWEB)

Huotari, J., E-mail: jonihuot@ee.oulu.fi [Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu (Finland); Cao, W. [Research Centre for Molecular Materials, University of Oulu, P.O. Box 3000, FI-90014 Oulu (Finland); Niu, Y. [MAX-lab, Lund University, SE-221 00 Lund (Sweden); Lappalainen, J.; Puustinen, J. [Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu (Finland); Pankratov, V. [Research Centre for Molecular Materials, University of Oulu, P.O. Box 3000, FI-90014 Oulu (Finland); Lloyd Spetz, A. [Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu (Finland); Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Huttula, M. [Research Centre for Molecular Materials, University of Oulu, P.O. Box 3000, FI-90014 Oulu (Finland)

2016-08-15

Highlights: • Films have different XPS and NEXAFS spectra depending on the crystal structure. • Difference in oxygen vacancy concentration between the different films is identified. • Connection between high gas sensitivity and surface state of the films is revealed. - Abstract: Among the other applications, vanadium oxide thin films are considered to be excellent candidates for gas sensing. To understand the origins of the sensing capability, we carried out X-ray photoelectron and X-ray absorption spectroscopy measurements to determinate the surface valence states of thin films with mixed V{sub 7}O{sub 16} and V{sub 2}O{sub 5} compounds. Thin films were fabricated by pulsed laser deposition, and the crystal structure and symmetry of the deposited films was studied using grazing incidence X-ray diffraction and Raman spectroscopy. These results together with X-ray photoelectron and absorption spectra showed that the thin-film crystal structures varied between orthorhombic V{sub 2}O{sub 5} phase and another phase of triclinic V{sub 7}O{sub 16}. X-ray photoelectron spectroscopy was used to quantitatively confirm the high amount of V{sup 4+} ions on surfaces of the films, especially of films with V{sub 7}O{sub 16} phase present. This result was confirmed in the quantitative analysis of the V2p near-edge X-ray absorption spectra. Through the observed electronic structures, it was found that in addition to unique crystal structure and morphology, the enhanced gas sensitivity of these layers is attributed to the increase in the amount of surface oxygen vacancies.

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

Science.gov (United States)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

Thin Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.

1998-11-19

The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

Thin films: Past, present, future

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K

1995-04-01

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Non-linear optics of nano-scale pentacene thin film

Science.gov (United States)

Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

2016-07-01

We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Enhanced electrical properties in bilayered ferroelectric thin films

Science.gov (United States)

Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

2013-03-01

Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

Thin Films in the Photovoltaic Industry

International Nuclear Information System (INIS)

Jaeger-Waldau, A.

2008-03-01

In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

Energy Technology Data Exchange (ETDEWEB)

Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

2016-12-15

Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

Nanostructured thin films and coatings functional properties

CERN Document Server

Zhang, Sam

2010-01-01

The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

An investigation on the In doping of ZnO thin films by spray pyrolysis

Science.gov (United States)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Modulation of magnetic coercivity in Ni thin films by reversible control of strain

Energy Technology Data Exchange (ETDEWEB)

Lin, Wen-Chin, E-mail: wclin@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Huang, Chia-Wei; Ting, Yi-Chieh; Lo, Fang-Yuh [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Chern, Ming-Yau [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

2015-05-01

In this study, we demonstrated the magnetoelectric control of magnetic thin films. (111)-textured Pd/Ni/Pd thin films were prepared on mica/lead zirconium titanate (PZT) substrates for the investigation. The reversible modulation of magnetic coercivity in Ni films was observed through the electric-voltage-controlled strain variation from the PZT substrate. For 14 nm Ni film, the applied electric field of ±350 V/m led to ±0.5% strain variation of PZT, which was transferred to ±0.4% strain variation of Pd/Ni/Pd thin films on mica, and resulted in ∓17 Oe (∓5% of the preliminary magnetic coercivity). The reversible modulation of magnetic coercivity is supposed to be caused by the voltage-controlled strain through the magneto-elastic effect. - Highlights: • The magnetoelectric control of the magnetic coercivity of Pd/Ni/Pd thin films was demonstrated. • The ±0.4% strain variation of 14 nm Ni thin films resulted in ±17 Oe change of H{sub c}. • The reversible modulation of H{sub c} is supposed to be caused by the magneto-elastic effect.

Optical and Magneto-Optical Properties of Gd22Fe78 Thin Films in the Photon Energy Range From 1.5 to 5.5 eV

Directory of Open Access Journals (Sweden)

Eva Jesenská

2016-01-01

Full Text Available Optical and magneto-optical properties of amorphous Gd22Fe78 (GdFe thin films prepared by direct current (DC sputtering on thermally oxidized substrates were characterized by the combination of spectroscopic ellipsometry and magneto-optical spectroscopy in the photon energy range from 1.5 to 5.5 eV. Thin SiNx and Ru coatings were used to prevent the GdFe surface oxidation and contamination. Using advanced theoretical models spectral dependence of the complete permittivity tensor and spectral dependence of the absorption coefficient were deduced from experimental data. No significant changes in the optical properties upon different coatings were observed, indicating reliability of used analysis.

Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

Energy Technology Data Exchange (ETDEWEB)

Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

2009-04-21

Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

Intrinsically conductive polymer thin film piezoresistors

DEFF Research Database (Denmark)

Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

2008-01-01

We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Strain profile and polarization enhancement in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Amir, F.Z. [Physics Department, St John' s University, 8000 Utopia Pkwy, Jamaica, NY 11439 (United States); Donner, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Aspelmeyer, M. [Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria); Noheda, B. [Department of Chemical Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands); Xi, X.X. [Physics Department, College of Science and Technology, Temple University, 1900 N.13th Street, Philadelphia, PA 19122 (United States); Moss, S.C. [Department of Physics, University of Houston, 617 Science and Research Building 1, Houston, Texas 77204-5005 (United States)

2012-11-15

The sensitivity of spontaneous polarization to epitaxial strain for both 10 and 50 nm thick Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BSTO) ferroelectric thin films has been studied. Crystal truncation rod (CTR) profiles in the 00L directions at different wavelengths, and grazing incidence diffraction (GID) in the 0K0 direction on a single crystal have been recorded. Modeling of the CTR data gives a detailed picture of the strain and provides clear evidence of the film out-of-plane expansion at the surface, an increase of the polarization, as well as a contraction at the interface. GID data confirm the fitting of the CTR, showing an in-plane expansion of the BSTO film at the interface and a contraction at the surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermal conductivity model for nanoporous thin films

Science.gov (United States)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

Science.gov (United States)

Beringer, Douglas B.

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

Impact of X-ray irradiation on PMMA thin films

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Saman, E-mail: saman.khan343@gmail.com [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Rafique, Muhammad Shahid [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Anjum, Safia [Physics Department, Lahore College for Woman University, Lahore (Pakistan); Hayat, Asma [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Iqbal, Nida [Faculty of Biomedical Engineering and Health Science, Universiti Teknologi Malaysia (UTM) (Malaysia)

2012-10-15

Highlights: Black-Right-Pointing-Pointer PMMA thin films were deposited at 300 Degree-Sign C and 500 Degree-Sign C using PLD technique. Black-Right-Pointing-Pointer These films were irradiated with different fluence of laser produced X-rays. Black-Right-Pointing-Pointer Irradiation affects the ordered packing as well as surface morphology of film. Black-Right-Pointing-Pointer Hardness of film decreases up to certain value of X-ray fluence. Black-Right-Pointing-Pointer Absorption in UV-visible range exhibits a non linear behavior. - Abstract: The objective of this project is to explore the effect of X-ray irradiation of thin polymeric films deposited at various substrate temperatures. pulsed laser deposition (PLD) technique is used for the deposition of PMMA thin films on glass substrate at 300 Degree-Sign C and 500 Degree-Sign C. These films have been irradiated with various X-rays fluences ranging from 2.56 to 5.76 mJ cm{sup -2}. Characterization of the films (before and after the irradiation) is done with help of X-ray Diffractrometer, Optical Microscope, Vickers hardness tester and UV-vis spectroscopy techniques. From XRD data, it is revealed that ordered packing has been improved for the films deposited at 300 Degree-Sign C. However after irradiation the films exhibited the amorphous behavior regardless of the X-ray fluence. Film deposited at 500 Degree-Sign C shows amorphous structure before and after irradiation. Hardness and particle size of thin film have also increased with the increasing substrate temperature. However, the irradiation has reverse effect i.e. the particle size as well as the hardness has reduced. Irradiation has also enhanced the absorption in the UV-visible region.

Structural, dielectric and ferroelectric characterization of PZT thin films

Directory of Open Access Journals (Sweden)

Araújo E.B.

1999-01-01

Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

Thin NbN film structures on SOI for SNSPD

Energy Technology Data Exchange (ETDEWEB)

Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

2012-07-01

Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Optical thin film deposition

International Nuclear Information System (INIS)

Macleod, H.A.

1979-01-01

The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

Optical thin films and coatings from materials to applications

CERN Document Server

Flory, Francois

2013-01-01

Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

Simple flash evaporator for making thin films of compounds

Energy Technology Data Exchange (ETDEWEB)

Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

2010-07-15

A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Determination and analysis of dispersive optical constants of CuIn3S5 thin films

International Nuclear Information System (INIS)

Khemiri, N.; Sinaoui, A.; Kanzari, M.

2011-01-01

CuIn 3 S 5 thin films were prepared from powder by thermal evaporation under vacuum (10 -6 mbar) onto glass substrates. The glass substrates were heated from 30 to 200 o C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E 0 and dispersion energy E d of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.

A high-efficiency solution-deposited thin-film photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

2008-10-02

High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

A high power ZnO thin film piezoelectric generator

Science.gov (United States)

Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

2016-02-01

A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

International Nuclear Information System (INIS)

Lin, Y.C.; Li, J.Y.; Yen, W.T.

2008-01-01

Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

Metal-insulator transition induced in CaVO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-04-07

Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

Determination and analysis of the dispersive optical constants of the 5,5',6,6'-tetraphenyl-2,2'-bi([1,3]dithiolo[4,5-b][1,4]dithiinylidene)-DDQ complex thin film

International Nuclear Information System (INIS)

Atalay, Y.; Basoglu, A.; Avci, D.; Arslan, M.; Ozturk, T.; Ertas, E.

2008-01-01

The synthesis and optical properties of the 5,5',6,6'-tetraphenyl-2,2'-bi([1,3]dithiolo [4,5-b] [1,4]dithiinylidene)-2,3-dichloro-5,6-dicyano-p-benzoquinone (DDQ) complex thin film were investigated by the optical characterization. The optical constants such as refractive index, extinction coefficient and absorption coefficient were determined using the transmittance T(λ) and reflectance R(λ) spectra and the refractive index dispersion was analyzed using single oscillator of Wemple-Didomenico model. The single oscillator energy E 0 and the dispersion energy E d were calculated. The effect of temperature on refractive dispersion and optical band gap E g is also discussed. As a result, the annealing temperatures have an important effect on refractive index of thin film

Nanostructured ZnO thin films prepared by sol–gel spin-coating

Energy Technology Data Exchange (ETDEWEB)

Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

2014-10-30

Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

Science.gov (United States)

Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

2015-12-01

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

Antibacterial effects of silver-doped hydroxyapatite thin films sputter deposited on titanium

International Nuclear Information System (INIS)

Trujillo, Nathan A.; Oldinski, Rachael A.; Ma, Hongyan; Bryers, James D.; Williams, John D.; Popat, Ketul C.

2012-01-01

Since many orthopedic implants fail as a result of loosening, wear, and inflammation caused by repeated loading on the joints, coatings such as hydroxyapatite (HAp) on titanium with a unique topography have been shown to improve the interface between the implant and the natural tissue. Another serious problem with long-term or ideally permanent implants is infection. It is important to prevent initial bacterial colonization as existing colonies have the potential to become encased in an extracellular matrix polymer (biofilm) that is resistant to antibacterial agents. In this study, plasma-based ion implantation was used to examine the effects of pre-etching on plain titanium. Topographical changes to the titanium samples were examined and compared via scanning electron microscopy. Hydroxyapatite and silver-doped hydroxyapatite thin films were then sputter deposited on titanium substrates etched at − 700 eV. For silver-doped films, two concentrations of silver (∼ 0.5 wt.% and ∼ 1.5 wt.%) were used. Silver concentrations in the film were determined using energy dispersive X-ray spectroscopy. Hydroxyapatite film thicknesses were determined by measuring the surface profile using contact profilometry. Staphylococcus epidermidis and Pseudomonas aeruginosa adhesion studies were performed on plain titanium, titanium coated with hydroxyapatite, titanium coated with ∼ 0.5 wt.% silver-doped hydroxyapatite, and titanium coated with ∼ 1.5 wt.% silver-doped hydroxyapatite. Results indicate that less bacteria adhered to surfaces containing hydroxyapatite and silver; further, as the hydroxyapatite films delaminated, silver ions were released which killed bacteria in suspension. - Highlights: ► We have developed a combination of plasma-based ion implantation and ion beam sputter deposition technique. ► Silver-doped hydroxyapatite thin films on titanium were developed. ► The thin films showed the ability to control the concentration of silver that is doped within the

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Post-Flight Analysis of Selected Fluorocarbon and Other Thin Film Polymer Specimens Flown on MISSE-5

Science.gov (United States)

DeGroh, Kim; Finckenor, Miria; Minton, Tim; Brunsvold, Amy; Pippin, Gary

2007-01-01

Twenty thin film specimens were flown on M1SSE-5 as a cooperative effort between several organizations. This presentation will report results of initial inspections and post-flight measurements of the optical properties and recession of these materials due to the approx.13 month exposure period on the exterior of the International Space Station. These specimens were located on the "anti-solar" side of the MISSE-5 container and received a low number of Equivalent Sun Hours of solar UV exposure. Profilometry and/or ATF measurements will be conducted to determine thickness changes and atomic oxygen-induced recession rates Six of the specimens were covered with thin Kapton films, 0.1 and 0.3 mil in thickness. The 0.1 mil Kapton was almost completely eroded, suggesting that the atomic oxygen fluence is <8 x 10(exp 19) atoms/sq cm, similar to levels experienced during Space Shuttle materials experiments in the 1980's and 1990's. A comparison of results from MISSE-5 and Space Shuttle experiments will be included for those materials common to both the short and long-term exposures.

Tools to synthesize the learning of thin films

International Nuclear Information System (INIS)

Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

2011-01-01

After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

Growth of α-V{sub 2}O{sub 5} nanostructured thin films as a function of deposition process

Energy Technology Data Exchange (ETDEWEB)

Singh, Megha, E-mail: meghasingh.life@gmail.com; Sharma, Rabindar K.; Reddy, G. B. [Thin film Laboratory, Department of Physics, Indian Institute of Technology Delhi -110016 (India)

2016-05-23

In this communication, we synthesizedvanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using four different methods for obtaining vanadate species namely thermal evaporation (source of vanadate species are V{sub 2}O{sub 5} powder and vanadium metal foil) and plasma assisted sublimation process (source of vanadate species are V{sub 2}O{sub 5} powder and vanadium metal foil). The effect of plasmaon morphological and structural propertieshave been systematicallystudied. XRD revealed thermal evaporation process yielded amorphous films whereassublimation process yielded highly crystalline α-V{sub 2}O{sub 5} films. HRTEM of nanobelts show, the growth is preferred in (001) crystallographic direction with interplanar distance of 0.43 nm. XPS revealed O/V ratio of ~2.4, which nearly agrees with standard V{sub 2}O{sub 5} stoichiometry. SEM revealed deposition process affect morphology of films; thermal evaporation results in smoother film while plasma assisted sublimation process reveals nanoflakes and nanobelts (NBs). All the results are inconcordance with each other.

Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

Energy Technology Data Exchange (ETDEWEB)

Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

2017-02-28

Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

Formation of Ruddlesden-Popper Faults and Their Effect on the Magnetic Properties in Pr0.5Sr0.5CoO3 Thin Films.

Science.gov (United States)

Jing, Hong-Mei; Cheng, Sheng; Mi, Shao-Bo; Lu, Lu; Liu, Ming; Cheng, Shao-Dong; Jia, Chun-Lin

2018-01-10

Epitaxial Pr 0.5 Sr 0.5 CoO 3 thin films have been grown on single-crystalline (La 0.289 Sr 0.712 )(Al 0.633 Ta 0.356 )O 3 (001) substrates by the pulsed laser deposition technique. The magnetic properties and microstructure of these films are investigated. It is found that Ruddlesden-Popper faults (RP faults) can be introduced in the films by changing the laser repetition rate. The segregation of Pr at the RP faults is characterized by atomic-resolution chemical mapping. The formation of the RP faults not only contributes to the epitaxial strain relaxation but also significantly decreases the ferromagnetic long-range order of the films, resulting in lower magnetizations than those of the fault-free films. Our results provide a strategy for tuning the magnetic properties of cobalt-based perovskite films by modifying the microstructure through the film growth process.

Fabrication of hydroxyapatite thin films on polyetheretherketone substrates using a sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Ozeki, K., E-mail: kazuhide.ozeki.365@vc.ibaraki.ac.jp [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Masuzawa, T. [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Aoki, H. [International Apatite Institute Co., Ltd., 2-12-9, Misaki-cho, Chiyoda-ku, Tokyo 101-0061 (Japan)

2017-03-01

Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. A thin titanium (Ti) intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film to the PEEK substrate. The coated films were recrystallized using a hydrothermal treatment to reduce the dissolution of the HA film. The films were then characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and a UV-Vis spectrophotometer. A pull-out test was performed to measure the film-to-substrate adhesion strength, and an immersion test was performed in ultra-pure water. In the XRD patterns of the sputtered film with the Ti intermediate layer on the PEEK substrate, small HA peaks and large Ti peaks were observed. After the hydrothermal treatment, the intensity of the HA peaks increased. The transmittance of the HA films with 5 and 10 nm Ti intermediate layers was > 79% and 68%, respectively, in the visible light wavelength region (400–700 nm) after the hydrothermal treatment. The adhesion strength of the hydrothermally treated HA films increased with decreasing thickness of the Ti intermediate layer, and the strength reached 2.7 MPa with the 5-nm-thick Ti intermediate layer. In the immersion test, the HA film with a 5-nm-thick Ti intermediate layer without hydrothermal treatment exhibited a released Ti concentration of 42.0 ± 2.4 ppb. After hydrothermal treatment, the released Ti concentration decreased to 17.3 ± 1.1 ppb. - Highlights: • Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. • A thin Ti intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film. • The adhesion strength of the HA films with the Ti intermediate layer increased with decreasing thickness of the Ti layer.

Fabrication of hydroxyapatite thin films on polyetheretherketone substrates using a sputtering technique

International Nuclear Information System (INIS)

Ozeki, K.; Masuzawa, T.; Aoki, H.

2017-01-01

Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. A thin titanium (Ti) intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film to the PEEK substrate. The coated films were recrystallized using a hydrothermal treatment to reduce the dissolution of the HA film. The films were then characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and a UV-Vis spectrophotometer. A pull-out test was performed to measure the film-to-substrate adhesion strength, and an immersion test was performed in ultra-pure water. In the XRD patterns of the sputtered film with the Ti intermediate layer on the PEEK substrate, small HA peaks and large Ti peaks were observed. After the hydrothermal treatment, the intensity of the HA peaks increased. The transmittance of the HA films with 5 and 10 nm Ti intermediate layers was > 79% and 68%, respectively, in the visible light wavelength region (400–700 nm) after the hydrothermal treatment. The adhesion strength of the hydrothermally treated HA films increased with decreasing thickness of the Ti intermediate layer, and the strength reached 2.7 MPa with the 5-nm-thick Ti intermediate layer. In the immersion test, the HA film with a 5-nm-thick Ti intermediate layer without hydrothermal treatment exhibited a released Ti concentration of 42.0 ± 2.4 ppb. After hydrothermal treatment, the released Ti concentration decreased to 17.3 ± 1.1 ppb. - Highlights: • Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. • A thin Ti intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film. • The adhesion strength of the HA films with the Ti intermediate layer increased with decreasing thickness of the Ti layer.

Molecular simulation of freestanding amorphous nickel thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

2013-10-31

Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

Morphological Study Of Palladium Thin Films Deposited By Sputtering

Energy Technology Data Exchange (ETDEWEB)

Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

2011-01-01

This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

Morphological Study Of Palladium Thin Films Deposited By Sputtering

International Nuclear Information System (INIS)

Salcedo, K L; Rodriguez, C A; Perez, F A; Riascos, H

2011-01-01

This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al 2 O 3 ) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

Resistivity of thiol-modified gold thin films

International Nuclear Information System (INIS)

Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

2014-01-01

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

Resistivity of thiol-modified gold thin films

Energy Technology Data Exchange (ETDEWEB)

Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

2014-11-03

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.

(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

Science.gov (United States)

Yamamichi, Shintaro; Yabuta, Hisato; Sakuma, Toshiyuki; Miyasaka, Yoichi

1994-03-01

(Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A-site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A-site poor films.

One-step synthesis of PbSe-ZnSe composite thin film

Directory of Open Access Journals (Sweden)

Abe Seishi

2011-01-01

Full Text Available Abstract This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

Energy Technology Data Exchange (ETDEWEB)

None

2008-06-30

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Phase transformation of the brownmillerite SrCoO{sub 2.5} thin film through alkaline water electrolysis

Energy Technology Data Exchange (ETDEWEB)

Tambunan, Octolia Togibasa; Lee, Min Young; Kim, Deok Hyeon; Parwanta, Kadek Juliana; Jung, Chang Uk [Hankuk University of Foreign Studies, Yongin (Korea, Republic of)

2014-06-15

A phase transformation from insulating brownmillerite SrCoO{sub 2.5} to conducting perovskite SrCoO{sub 3} through electrochemical oxidation has been demonstrated for thin films of SrCoO{sub x} on a SrTiO{sub 3} (001) substrate. The cobalt-oxide film strongly favors the brownmillerite phase of SrCoO{sub 2.5} instead of the perovskite phase of SrCoO{sub 3} on a SrTiO{sub 3} (001) substrate due to its low lattice mismatch. Therefore, the phase transformation has its own retention. The alkaline water electrolysis occurs between the copper cathode and the SrCoO{sub 2.5} film anode. The H{sup +} ions are attracted to the cathode and generate H{sub 2} gas. The OH{sup -} ions are attracted to the film's surface and generate a rich amount of oxygen to fill the oxygen vacancy channel of brownmillerite SrCoO{sub 2.5}. The phase transformation was verified from the change in the out-of-plane lattice constant and the change in the resistivity of the electrolyzed film.

Optical properties of WO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay; Tomar, Monika

2014-01-01

Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO 3 thin films. WO 3 thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO 3 thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO 3 thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO 3 /Au/prism structure were utilized to estimate the dielectric properties of WO 3 thin films at optical frequency (λ = 633 nm). As the thickness of WO 3 thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO 3 film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light

SILAR deposited Bi2S3 thin film towards electrochemical supercapacitor

Science.gov (United States)

Raut, Shrikant S.; Dhobale, Jyotsna A.; Sankapal, Babasaheb R.

2017-03-01

Bi2S3 thin film electrode has been synthesized by simple and low cost successive ionic layer adsorption and reaction (SILAR) method on stainless steel (SS) substrate at room temperature. The formation of interconnected nanoparticles with nanoporous surface morphology has been achieved and which is favourable to the supercapacitor applications. Electrochemical supercapacitive performance of Bi2S3 thin film electrode has been performed through cyclic voltammetry, charge-discharge and stability studies in aqueous Na2SO4 electrolyte. The Bi2S3 thin film electrode exhibits the specific capacitance of 289 Fg-1 at 5 mVs-1 scan rate in 1 M Na2SO4 electrolyte.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Science.gov (United States)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Photoluminescence properties of perovskite multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

2016-07-01

Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

Optical characteristics of the thin-film scintillator detector

International Nuclear Information System (INIS)

Muga, L.; Burnsed, D.

1976-01-01

A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

Effect of cerium substitution on microstructure and Faraday rotation of Ce{sub x}Y{sub 3-x}Fe{sub 5}O{sub 12} thin films

Energy Technology Data Exchange (ETDEWEB)

Shahrokhvand, S.M.; Mozaffari, M.; Rozatian, A.S.H. [University of Isfahan, Department of Physics, Faculty of Science, Isfahan (Iran, Islamic Republic of); Hamidi, S.M. [Shahid Beheshti University, Laser and Plasma Research Institute, Evin, Tehran (Iran, Islamic Republic of); Tehranchi, M.M. [Shahid Beheshti University, Laser and Plasma Research Institute, Evin, Tehran (Iran, Islamic Republic of); Shahid Beheshti University, Department of Physics, Evin, Tehran (Iran, Islamic Republic of)

2016-01-15

In this work, cerium-substituted yttrium iron garnet (Ce{sub x}Y{sub 3-x}Fe{sub 5}O{sub 12}, x = 0.25-1) targets were fabricated by conventional ceramic method at different temperatures, and their crystal structures were investigated by X-ray diffraction method. The results showed that the minimum calcining temperature required to get single-phase targets depends on x value and decreased by increasing x value. Then, thin films of the targets were deposited on GGG (444) single-crystal substrates by pulsed laser deposition technique. Based on the previous studies, preferred (444) oriented Ce{sub x}Y{sub 3-x}Fe{sub 5}O{sub 12} thin films were fabricated under optimum conditions. Faraday rotation of the thin films was measured at 635 nm wavelength, and the results showed that Faraday rotation and sensitivity constant increased by increasing x value. Scanning electron microscope images showed that by increasing x value, cracks on the thin films' surface increased. Atomic force microscopy images showed that the films have smooth surfaces and the surface roughness decreased by increasing the x value. (orig.)

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

Science.gov (United States)

2011-04-30

growth of a- IGZO channel layers, but most of the devices exhibited enhancement-mode operation. The second approach studied the effect of hydrogenation of a... IGZO channel layers during post-annealing. Even though the device quality improved, depletion-mode operation was not achieved. Depletion-mode... IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12

Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Directory of Open Access Journals (Sweden)

Simona Liliana Iconaru

2014-01-01

Full Text Available In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM with energy Dispersive X-ray attachment (X-EDS, Fourier transform infrared spectroscopy (FT-IR, and glow discharge optical emission spectroscopy (GDOES. These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with xAg=0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

Fractal and multifractal analysis of LiF thin film surface

International Nuclear Information System (INIS)

Yadav, R.P.; Dwivedi, S.; Mittal, A.K.; Kumar, M.; Pandey, A.C.

2012-01-01

Highlights: ► Fractal and multifractal analysis of surface morphologies of the LiF thin films. ► Complexity and roughness of the LiF thin films increases as thickness increases. ► LiF thin films are multifractal in nature. ► Strength of the multifractality increases with thickness of the film. - Abstract: Fractal and multifractal analysis is performed on the atomic force microscopy (AFM) images of the surface morphologies of the LiF thin films of thickness 10 nm, 20 nm, and 40 nm, respectively. Autocorrelation function, height–height correlation function, and two-dimensional multifractal detrended fluctuation analysis (MFDFA) are used for characterizing the surface. It is found that the interface width, average roughness, lateral correlation length, and fractal dimension of the LiF thin film increase with the thickness of the film, whereas the roughness exponent decreases with thickness. Thus, the complexity and roughness of the LiF thin films increases as thickness increases. It is also demonstrated that the LiF thin films are multifractal in nature. Strength of the multifractality increases with thickness of the film.

Low-cost flexible thin-film detector for medical dosimetry applications.

Science.gov (United States)

Zygmanski, P; Abkai, C; Han, Z; Shulevich, Y; Menichelli, D; Hesser, J

2014-03-06

The purpose of this study is to characterize dosimetric properties of thin film photovoltaic sensors as a platform for development of prototype dose verification equipment in radiotherapy. Towards this goal, flexible thin-film sensors of dose with embedded data acquisition electronics and wireless data transmission are prototyped and tested in kV and MV photon beams. Fundamental dosimetric properties are determined in view of a specific application to dose verification in multiple planes or curved surfaces inside a phantom. Uniqueness of the new thin-film sensors consists in their mechanical properties, low-power operation, and low-cost. They are thinner and more flexible than dosimetric films. In principle, each thin-film sensor can be fabricated in any size (mm² - cm² areas) and shape. Individual sensors can be put together in an array of sensors spreading over large areas and yet being light. Photovoltaic mode of charge collection (of electrons and holes) does not require external electric field applied to the sensor, and this implies simplicity of data acquisition electronics and low power operation. The prototype device used for testing consists of several thin film dose sensors, each of about 1.5 cm × 5 cm area, connected to simple readout electronics. Sensitivity of the sensors is determined per unit area and compared to EPID sensitivity, as well as other standard photodiodes. Each sensor independently measures dose and is based on commercially available flexible thin-film aSi photodiodes. Readout electronics consists of an ultra low-power microcontroller, radio frequency transmitter, and a low-noise amplification circuit implemented on a flexible printed circuit board. Detector output is digitized and transmitted wirelessly to an external host computer where it is integrated and processed. A megavoltage medical linear accelerator (Varian Tx) equipped with kilovoltage online imaging system and a Cobalt source are used to irradiate different thin-film

Colossal elastoresistance, electroresistance and magnetoresistance in Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Chen, Liping, E-mail: chenliping0003@163.com [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Department of Physics, Hong Kong University, Hong Kong (China); Guo, Xuexiang [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Gao, J. [Department of Physics, Hong Kong University, Hong Kong (China)

2016-05-01

Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} thin films on substrates of (001)-oriented LaAlO{sub 3} were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of ~1.3% brings a great resistivity change of ~98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I{sub 1} {sub μA})−ρ(I{sub 1000} {sub μA})]/ρ(I{sub 1} {sub μA}) reaches ~70% at T=25 K, much higher than ER~7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence. - Highlights: • The electric current-induced electroresistance (ER) and magnetoresistance (MR)studies on PLD grown Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3}/(001) LaAlO{sub 3} films were found to be greatly sensitive to the film thickness arising from the strain. • It is shown that, 60 nm film exhibit compressive in-plane strain which leads to phase separation and hence colossal MR and ER. • Our results suggest that the manganites located at phase boundary may be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance.

Investigation of the Emissivity and Suitability of a Carbon Thin Film for Terahertz Absorbers

Science.gov (United States)

2016-06-01

however, the understanding that the introduction of a carbon thin film could reduce signal loss and will result in a change in thermal fluctuations is...NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS INVESTIGATION OF THE EMISSIVITY AND SUITABILITY OF A CARBON THIN FILM FOR TERAHERTZ ABSORBERS...TITLE AND SUBTITLE INVESTIGATION OF THE EMISSIVITY AND SUITABILITY OF A CARBON THIN FILM FOR TERAHERTZ ABSORBERS 5. FUNDING NUMBERS 6. AUTHOR(S) Naomi C

Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

Laser nanostructuring of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

2016-06-30

Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

Low temperature aluminum nitride thin films for sensory applications

Energy Technology Data Exchange (ETDEWEB)

Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

Thermal oxidation of Ni films for p-type thin-film transistors

KAUST Repository

Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

2013-01-01

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

Engineering helimagnetism in MnSi thin films

Directory of Open Access Journals (Sweden)

S. L. Zhang

2016-01-01

Full Text Available Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

Engineering helimagnetism in MnSi thin films

Science.gov (United States)

Zhang, S. L.; Chalasani, R.; Baker, A. A.; Steinke, N.-J.; Figueroa, A. I.; Kohn, A.; van der Laan, G.; Hesjedal, T.

2016-01-01

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ˜18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

Engineering helimagnetism in MnSi thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, S. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Chalasani, R.; Kohn, A. [Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv 6997801, Tel Aviv (Israel); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Steinke, N.-J. [ISIS, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0QX (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom)

2016-01-15

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

Restructuring in block copolymer thin films

DEFF Research Database (Denmark)

Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

2017-01-01

Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

Cell adhesion on NiTi thin film sputter-deposited meshes

Energy Technology Data Exchange (ETDEWEB)

Loger, K. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Engel, A.; Haupt, J. [Department of Cardiovascular Surgery, University Hospital of Schleswig-Holstein, Kiel (Germany); Li, Q. [Biocompatible Nanomaterials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Lima de Miranda, R. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); ACQUANDAS GmbH, Kiel (Germany); Quandt, E. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Lutter, G. [Department of Cardiovascular Surgery, University Hospital of Schleswig-Holstein, Kiel (Germany); Selhuber-Unkel, C. [Biocompatible Nanomaterials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany)

2016-02-01

Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium (NiTi) thin film meshes were produced by means of magnetron sputter deposition. Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm{sup 2} and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133 +) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm{sup 2} and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applications in cardiovascular tissue engineering, particularly for the fabrication of heart valves. - Highlights: • Freestanding NiTi thin film scaffolds were fabricated with magnetron sputtering process. • Effective mechanical properties of NiTi scaffolds can be adapted by the mesh structure parameters. • Cell adhesion on the NiTi thin film scaffold is controlled by the structure parameters of the mesh. • Cells strongly adhere after seven days and form a confluent layer on the mesh.

Cell adhesion on NiTi thin film sputter-deposited meshes

International Nuclear Information System (INIS)

Loger, K.; Engel, A.; Haupt, J.; Li, Q.; Lima de Miranda, R.; Quandt, E.; Lutter, G.; Selhuber-Unkel, C.

2016-01-01

Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium (NiTi) thin film meshes were produced by means of magnetron sputter deposition. Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm 2 and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133 +) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm 2 and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applications in cardiovascular tissue engineering, particularly for the fabrication of heart valves. - Highlights: • Freestanding NiTi thin film scaffolds were fabricated with magnetron sputtering process. • Effective mechanical properties of NiTi scaffolds can be adapted by the mesh structure parameters. • Cell adhesion on the NiTi thin film scaffold is controlled by the structure parameters of the mesh. • Cells strongly adhere after seven days and form a confluent layer on the mesh.

Thermal decomposition of titanium deuteride thin films

International Nuclear Information System (INIS)

Malinowski, M.E.

1983-01-01

The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

Nanosphere lithography applied to magnetic thin films

Science.gov (United States)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

Energy Technology Data Exchange (ETDEWEB)

Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

2015-08-15

Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

Thin films by metal-organic precursor plasma spray

International Nuclear Information System (INIS)

Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

2009-01-01

While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

Bandtail characteristics in InN thin films

International Nuclear Information System (INIS)

Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

2002-01-01

The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

Thin films of mixed metal compounds

Science.gov (United States)

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Thin-Film Power Transformers

Science.gov (United States)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Preparation and properties of antimony thin film anode materials

Institute of Scientific and Technical Information of China (English)

SU Shufa; CAO Gaoshao; ZHAO Xinbing

2004-01-01

Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

Science.gov (United States)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Method of formation of thin film component

Energy Technology Data Exchange (ETDEWEB)

Wada, Chikara; Kato, Kinya

1988-04-16

In the production process of component which is carrying thin film device, such as thin film transistor, acid treatment is applied for etching or for preventing contamination. In case of barium borsilicate glass base, the base is affected by the acid treatment resulting the decrease of transparency. To avoid the effect, deposition of SiO/sub 2/ layer on the surface of the base is usually applied. This invention relates to the protective method of barium borosilicate surface by harnessing the effect of coexisting ion in the acid treatment bath. The method is to add 0.03-5 mol/l of phosphoric acid or its salt in the bath. By the effect of coexisting ion, barium borsilicate glass surface was protected from the damage. (2 figs)

Structural phototransformation of WO{sub 3} thin films detected by photoacoustic analysis

Energy Technology Data Exchange (ETDEWEB)

Pacheco, Argelia Perez, E-mail: ekargy@hotmail.com [Universidad Nacional Autonoma de Mexico, Laboratorio de Fotofisica y Peliculas Delgadas-CCADET, Ciudad Universitaria, Coyoacan, A.P. 70-186, C.P. 04510, Mexico, D.F. (Mexico); Montes de Oca, C. Oliva; Castaneda-Guzman, R.; Garcia, A. Esparza [Universidad Nacional Autonoma de Mexico, Laboratorio de Fotofisica y Peliculas Delgadas-CCADET, Ciudad Universitaria, Coyoacan, A.P. 70-186, C.P. 04510, Mexico, D.F. (Mexico)

2012-11-15

Highlights: Black-Right-Pointing-Pointer The phototransformation of WO{sub 3} thin films were studied by photoacoustic technique. Black-Right-Pointing-Pointer The phase transition in WO{sub 3} thin films was induced by laser irradiation fluence. Black-Right-Pointing-Pointer The onset and end of the phototransformation in the thin films was identified. Black-Right-Pointing-Pointer The ablation threshold for each sample was identified. - Abstract: The photoacoustic technique (PA) was used to detect the phase transformation from amorphous to crystalline state of tungsten oxide (WO{sub 3}) thin films induced by UV pulsed laser radiation at low energy (<1.5 mJ). The evolution of photoacoustic signal was studied by a correlation analysis, comparing successive signals at fluences ranging from 0 to 20 mJ/cm{sup 2}. In this interval, it was possible to observe structural changes and the ablation threshold in films due to incident laser fluence effect. Thin films of WO{sub 3} were deposited by DC reactive magnetron sputtering over glass substrates at different deposition times. The results obtained by correlation analysis were compared with Raman spectroscopy data.

Polymer Thin Film Stabilization.

Science.gov (United States)

Costa, A. C.; Oslanec, R.; Composto, R. J.; Vlcek, P.

1998-03-01

We study the dewetting dynamics of thin polystyrene (PS) films deposited on silicon oxide surfaces using optical (OM) and atomic force (AFM) microscopes. Quantitative analysis of the hole diameter as a function of annealing time at 175^oC shows that blending poly(styrene-block-methyl-methacrylate) (PS-b-PMMA) with PS acts to dramatically slow down the dewetting rate and even stops holes growth before they impinge. AFM studies show that the hole floor is smooth for a pure PS film but contains residual polymer for the blend. At 5% vol., a PS-b-PMMA with high molar mass and low PMMA is a more effective stabilizing agent than a low molar mass/high PMMA additive. The optimum copolymer concentration is 3% vol. beyond which film stability doesn't improve. Although dewetting is slowed down relative to pure PS, PS/PS-b-PMMA bilayers dewet at a faster rate than blends having the same overall additive concentration.

Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

Science.gov (United States)

Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

Chemical vapour deposition of thin-film dielectrics

International Nuclear Information System (INIS)

Vasilev, Vladislav Yu; Repinsky, Sergei M

2005-01-01

Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

Residual stress in spin-cast polyurethane thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

2015-01-19

Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

Electric and magnetic fields effects on the transport properties of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Villafuerte, M. E-mail: mvillafeurte@herrera.unt.edu.ar; Duhalde, S. E-mail: sduhald@fi.uba.ar; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L

2004-05-01

The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported.

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

International Nuclear Information System (INIS)

Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

2012-01-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

C-axial oriented (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 thin film grown on Nb doped SrTiO3 substrate by pulsed laser deposition

International Nuclear Information System (INIS)

Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

2007-01-01

A c-axial oriented (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 thin film has been grown on a (0 0 1) Nb doped SrTiO 3 substrate by pulsed laser deposition. The permittivity, dielectric loss and tunability of the c-axial oriented film are 187, 0.002 and 6% (at 750 kV cm -1 biasing), respectively, indicating a figure of merit of 30. Moreover, an asymmetry behaviour is observed in the dc electric field dependence of permittivity, which could be attributed to the asymmetry of top and bottom electrodes

Simulated Thin-Film Growth and Imaging

Science.gov (United States)

Schillaci, Michael

2001-06-01

Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

Nanostructured thin films as functional coatings

Energy Technology Data Exchange (ETDEWEB)

Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

2010-06-15

Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

Thin film characterization by resonantly excited internal standing waves

Energy Technology Data Exchange (ETDEWEB)

Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

1996-09-01

This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

Structural and biocompatible characterization of TiC/a:C nanocomposite thin films

International Nuclear Information System (INIS)

Balázsi, K.; Vandrovcová, M.; Bačáková, L.; Balázsi, Cs.

2013-01-01

In this work, sputtered TiC/amorphous C thin films have been developed in order to be applied as potential barrier coating for interfering of Ti ions from pure Ti or Ti alloy implants. Our experiments were based on magnetron sputtering method, because the vacuum deposition provides great flexibility for manipulating material chemistry and structure, leading to films and coatings with special properties. The films have been deposited on silicon (001) substrates with 300 nm thick oxidized silicon sublayer at 200 °C deposition temperature as model substrate. Transmission electron microscopy has been used for structural investigations. Thin films consisted of ∼ 20 nm TiC columnar crystals embedded by 5 nm thin amorphous carbon matrix. MG63 osteoblast cells have been applied for in vitro study of TiC nanocomposites. The cell culture tests give strong evidence of thin films biocompatibility. Highlights: ► The main goal of this work is the relatively easy preparation of nanocomposite TiC thin films by dc magnetron sputtering. ► TEM and HREM were applied for structural characterization of columnar TiC nanocrystals and amorphous carbon matrix. ► The biocompatibility of films was showed by MG63 human osteoblast like cells during 1, 3 and 7 days seeding

Thin film ceramic thermocouples

Science.gov (United States)

Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

2011-01-01

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Novel micro-patterning processes for thin film NiTi vascular devices

International Nuclear Information System (INIS)

Chun, Y J; Mohanchandra, K P; Carman, G P; Levi, D S; Fishbein, M C

2010-01-01

In order to create microscale features in thin film NiTi for use in vascular endografts, a novel 'lift-off process' was developed for use with deep reactive ion etching. A wet etching approach is compared to two variations of this new 'lift-off' process. The first lift-off process (lift-off I) used Si posts to define the features of NiTi film deposited on the Si substrate. This method produced fractures in the NiTi when the film was released. The lift-off II process used Si islands as substrate for the film while the Si wafer defined the specific geometric features. Lift-off II process allowed for the creation of various shape patterns (i.e., ellipse, diamond, circle, square, etc) in the range of 5–180 µm. The lift-off II process produced smooth and well aligned micro-patterns in thin film NiTi without the undercutting found in wet etching techniques. The micro-patterned thin film NiTi formed from the lift-off II process was used to cover a stent. In vivo tests were performed to evaluate the endothelialization though patterned thin films. Angiography, histopathology and SEM showed patency of the artery and uniformly promoted endothelial layer covering without thrombosis in both a medium and small artery

High magnetic field properties of Fe-pnictide thin films

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz

2015-11-20

epitaxy without compromising superconducting properties. It is worth mentioning, that a world record T{sub c} of 28 K for Co-doped Ba-122 thin films is reported here. Chapter 4 describes high-field transport properties (up to dc 35 T) of epitaxial P-doped Ba-122 thin films prepared by MBE. Among the FBS, P-doped Ba-122 shows very high transport critical current densities, although the T{sub c} is lower than for LnFeAs(O,F)[Ln=Sm and Nd]. Additionally, the film is microstructurally clean. These high J{sub c} values are due to a high vortex line energy. Chapter 5 deals with transport properties of epitaxial SmFeAs(O,F) thin films. In the course of this work, a dc 45 T magnet has been used within collaboration with the National High Magnetic Field Laboratory at Tallahassee, FL, USA. SmFeAs(O,F) thin films have been prepared by molecular beam epitaxy (MBE). The investigated film shows a very high transport critical current density (J{sub c}) of over 10{sup 5} A/cm{sup 2} at 45 T and 4.2 K for both main crystallographic directions, which features favourable for high-field magnet applications. Additionally, by investigating the pinning properties, a dimensional crossover between the superconducting coherence length and the FeAs interlayer distance at 30-40 K was observed. Chapter 6 reports on high-field transport properties of NdFeAs(O,F) thin films prepared by MBE. In this case, the transition from Abrikosov to Josephson vortices was observed around 20-30K. Additionally, the angular J{sub c} data were scaled with the anisotropic GinzburgLandau approach. The obtained parameters at given temperature are observed to increase with decreasing temperature, which is different from Co-doped Ba-122. Chapter 7 summarises this work.

Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

Excimer Laser Deposition of PLZT Thin Films

National Research Council Canada - National Science Library

Petersen, GAry

1991-01-01

.... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

Structural Modification of Sol-Gel Synthesized V2O5 and TiO2 Thin Films with/without Erbium Doping

Directory of Open Access Journals (Sweden)

Fatma Pınar Gökdemir

2014-01-01

Full Text Available Comparative work of with/without erbium- (Er- doped vanadium pentoxide (V2O5 and titanium dioxide (TiO2 thin films were carried out via sol-gel technique by dissolving erbium (III nitrate pentahydrate (Er(NO33·5H2O in vanadium (V oxoisopropoxide (OV[OCH(CH32]3 and titanium (IV isopropoxide (Ti[OCH(CH32]4. Effect of Er doping was traced by Fourier transform IR (FTIR, thermogravimetric/differential thermal (TG/DTA, and photoluminescence measurements. UV-Vis transmission/absorption measurement indicated a blue shift upon Er doping in V2O5 film due to the softening of V=O bond while appearance of typical absorption peaks in Er-doped TiO2 film. Granule size of the films increased (reduced upon Er substitution on host material compared to undoped V2O5 and TiO2 films, respectively.

Suppression of structural and magnetotransport transitions in compressed Pr0.5Sr0.5MnO3 thin films resulting in colossal magnetoresistance effect

International Nuclear Information System (INIS)

Mercey, B.; Hervieu, M.; Prellier, W.; Wolfman, J.; Simon, C.; Raveau, B.

2001-01-01

Thin films of Pr 0.5 Sr 0.5 MnO 3 have been deposited on [100]-LaAlO 3 using laser ablation. In contrast to the bulk compounds, such films do not exhibit any structural and magnetotransport transitions versus temperature; more particularly the A-type antiferromagnetic phase with the Fmmm structure which exists in the bulk below T N =135K is suppressed, and the film is an insulator in the absence of a magnetic field. However a colossal magnetoresistance effect is observed, with resistance ratios much larger than in the bulk. These differences with respect to the bulk, are explained by the presence of substrate-induced strains. [copyright] 2001 American Institute of Physics

Bending impact on the performance of a flexible Li4Ti5O12-based all-solid-state thin-film battery.

Science.gov (United States)

Sepúlveda, Alfonso; Speulmanns, Jan; Vereecken, Philippe M

2018-01-01

The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li 4 Ti 5 O 12 , LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime.

Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

International Nuclear Information System (INIS)

Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

1998-01-01

Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

Studies on the high electronic energy deposition in polyaniline thin films

International Nuclear Information System (INIS)

Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

2008-01-01

We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

Quantum-well-driven magnetism in thin films

DEFF Research Database (Denmark)

Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt

1996-01-01

We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present...... a physically transparent explanation of this behavior in terms of the Stoner picture and magnetic quantum-well states....

Tailoring and optimization of optical properties of CdO thin films for gas sensing applications

Science.gov (United States)

Rajput, Jeevitesh K.; Pathak, Trilok K.; Kumar, V.; Swart, H. C.; Purohit, L. P.

2018-04-01

Cadmium oxide (CdO) thin films have been deposited onto glass substrates using different molar concentrations (0.2 M, 0.5 M and 0.8 M) of cadmium acetate precursor solutions using a sol-gel spin coating technique. The structural, morphological, optical and electrical results are presented. X-ray diffraction patterns indicated that the CdO films of different molarity have a stable cubic structure with a (111) preferred orientation at low molar concentration. Scanning electron microscopy images revealed that the films adopted a rectangular to cauliflower like morphology. The optical transmittance of the thin films was observed in the range 200-800 nm and it was found that the 0.2 M CdO thin films showed about 83% transmission in the visible region. The optical band gap energy of the thin films was found to vary from 2.10 to 3.30 eV with the increase in molar concentration of the solution. The electrical resistance of the 0.5 M thin film was found to be 1.56 kΩ. The oxygen sensing response was observed between 20-33% in the low temperature range (32-200 °C).

Physics of thin films advances in research and development

CERN Document Server

Hass, Georg; Vossen, John L

2013-01-01

Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

Structural, morphological and optical properties of LiCo0.5Ni0.45Ag0.05O2 thin films

Science.gov (United States)

Haider, Adawiya J.; AL-Rsool, Rusul Abed; AL-Tabbakh, Ahmed A.; Al-Gebori, Abdul Nasser M.; Mohamed, Aliaa

2018-05-01

Pulsed Laser Deposition (PLD) method has been successfully used for the synthesized of nano-crystalline cathode m aterial LiCo0.5Ni0.45Ag0.05O2 (LCNAO) thin film. LCNAO Ferromagnetic using pulsed Nd-YAG laser with wavelength (λ = 532 nm) and duration (10 ns) and energy fluence (1.4 J/cm2) with different substrate temperature (100, 200, 300) ˚C and O2 pressure at 10 mbar. The structural, morphological and optical properties of the films were determined by X-ray Diffraction (XRD), Scan Electron Microscopy (SEM), Atomic Force microscope (AFM) and UV-VIS spectroscopy respectively. It is observed that partial layer to spinel transformation takes place during post annealing and the average particle size of the LiCo0.5Ni0.45Ag0.05O2 is found to be (1-12) nm from SEM measurement. Finally the optical properties of the thin films have been studied at different Substrate temperature. It found the energy gap decreases from 4.2 to 3.8 eV when the substrate's temperature increasing from 100° C into 300 °C of the LCNAO films. These mean that the optical quality of LCNAO films is improved due to the increase in crystalline size and reduction of defect sites.

Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

International Nuclear Information System (INIS)

Patil, R B; Puri, R K; Puri, V

2008-01-01

Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

Thickness-dependence of optical constants for Ta2O5 ultrathin films

International Nuclear Information System (INIS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-01-01

An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

Science.gov (United States)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

1997-11-21

The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

Field ion microscope studies on thin films

International Nuclear Information System (INIS)

Cavaleru, A.; Scortaru, A.

1976-01-01

A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

Optical characterization of niobium pentoxide thin films

International Nuclear Information System (INIS)

Pawlicka, A.

1996-01-01

Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

The Structure and Stability of Molybdenum Ditelluride Thin Films

Directory of Open Access Journals (Sweden)

Zhouling Wang

2014-01-01

Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

Magnetic surfaces, thin films, and multilayers

International Nuclear Information System (INIS)

Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

1992-01-01

This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

Nanocomposite Thin Film of Poly(3-aminobenzoic acid and Multiwalled Carbon Nanotubes Fabricated through an Electrochemical Method

Directory of Open Access Journals (Sweden)

Paphawadee Netsuwan

2014-01-01

Full Text Available The composite thin films of poly(3-aminobenzoic acid (PABA and multiwalled carbon nanotubes (MWNTs are successfully fabricated through an electrochemical method. The composite mixtures containing 50 mM of 3-aminobenzoic acid with various concentrations of MWNTs (1.0, 2.5, 5.0, 7.5, and 10 mg/mL in 0.5 M H2SO4 were prepared and used in this study. Cyclic voltammetry (CV was used for fabrication and monitoring the electropolymerization of the composite thin films with potential range of 0 to 1100 mV for 5 cycles at scan rate of 20 mV/s on indium tin oxide- (ITO-coated glass substrate. UV-vis absorption spectroscopy, atomic force microscopy (AFM, and scanning electron microscopy (SEM techniques were employed to characterize the obtained composite thin films. It was found that MWNTs can enhance the peak current of CV traces of the PABA/MWNTs composite thin films without affecting the UV-vis absorption spectra. The surface morphology of the thin films can be studied using AFM and SEM techniques.

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

Science.gov (United States)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

Thin films prepared from tungstate glass matrix

Energy Technology Data Exchange (ETDEWEB)

Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

2008-01-30

Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.